National Library of Energy BETA

Sample records for germany gan m1

  1. M1 Year -Regular Curriculum ^

    E-Print Network [OSTI]

    Alford, Simon

    M1 Year - Regular Curriculum ^ Satisfactorily complete all requirements Pass at least 67% of weighted curriculum Take make-up exam(s) or approved summer course Satisfactorily complete all requirements ¹ Fail any requirement ² If No Previous Repeat Year Pass 40% to 66% of weighted curriculum * Students who

  2. K.K. Gan 1 Summary of Irradiation Activity

    E-Print Network [OSTI]

    Gan, K. K.

    K.K. Gan 1 Summary of Irradiation Activity September 22, 2010 K.K. Gan The Ohio State University with 300 MeV pions in August VCSEL/PIN Irradiation #12;K.K. Gan TWEPP2010 3 array VCSEL driver Chips Irradiation #12;K.K. Gan TWEPP2010 4 Infinicor SX+: participating institution: SMU

  3. Gruppindelning fr alla M1-studenter VT2015 Gller i samtliga M1-kurser och erstter hstens gruppindelning.

    E-Print Network [OSTI]

    .11 Knutar, Felix M1.17 Hogman, Oskar M1.04 Tagaeus, Vilhelm M1.11 Lundström, Alexander M1.17 Huber, Daniel M.12 Nilsson, Amanda M1.18 Lönnbratt, Rebecka M1.05 Barsne, Hugo M1.12 Nordgren, Pascal M1.18 Molin, Hanna M1

  4. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  5. K.K. Gan Transmission Bandwidth 1 Results on Bandwidth Measurement

    E-Print Network [OSTI]

    Gan, K. K.

    K.K. Gan Transmission Bandwidth 1 Results on Bandwidth Measurement April 16, 2008 K.K, Gan The Ohio State University #12;K.K. Gan Transmission Bandwidth 2 Outline Transmission on micro-cables Transmission on TRT micro-cables Transmission on TRT HV micro-coaxs Summary #12;K.K. Gan Transmission

  6. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  7. Germany knows mining

    SciTech Connect (OSTI)

    2006-11-15

    Whether it is the nuance of precision or robust rock breaking strength, German suppliers have the expertise. Germany has about 120 companies in the mining equipment industry, employing some 16,000 people. The article describes some recent developments of the following companies: DBT, Liebherr, Atlas Copco, BASF, Boart Longyear, Eickhoff, IBS, Maschinenfabrik Glueckauf, Komatsu, TAKRA, Terex O & R, Thyssen Krupp Foerdertechnik and Wirtgen. 7 photos.

  8. Search for 14.4 keV solar axions emitted in the M1-transition of 57Fe nuclei with CAST

    E-Print Network [OSTI]

    CAST Collaboration; S. Andriamonje; S. Aune; D. Autiero; K. Barth; A. Belov; B. Beltrán; H. Bräuninger; J. M. Carmona; S. Cebrián; J. I. Collar; T. Dafni; M. Davenport; L. Di Lella; C. Eleftheriadis; J. Englhauser; G. Fanourakis; E. Ferrer-Ribas; H. Fischer; J. Franz; P. Friedrich; T. Geralis; I. Giomataris; S. Gninenko; H. Gómez; M. Hasinoff; F. H. Heinsius; D. H. H. Hoffmann; I. G. Irastorza; J. Jacoby; K. Jakov?i?; D. Kang; K. Königsmann; R. Kotthaus; M. Kr?mar; K. Kousouris; M. Kuster; B. Laki?; C. Lasseur; A. Liolios; A. Ljubi?i?; G. Lutz; G. Luzón; D. Miller; J. Morales; A. Ortiz; T. Papaevangelou; A. Placci; G. Raffelt; H. Riege; A. Rodríguez; J. Ruz; I. Savvidis; Y. Semertzidis; P. Serpico; L. Stewart; J. Vieira; J. Villar; J. Vogel; L. Walckiers; K. Zioutas

    2009-12-04

    We have searched for 14.4 keV solar axions or more general axion-like particles (ALPs), that may be emitted in the M1 nuclear transition of 57Fe, by using the axion-to-photon conversion in the CERN Axion Solar Telescope (CAST) with evacuated magnet bores (Phase I). From the absence of excess of the monoenergetic X-rays when the magnet was pointing to the Sun, we set model-independent constraints on the coupling constants of pseudoscalar particles that couple to two photons and to a nucleon g_{a\\gamma} |-1.19 g_{aN}^{0}+g_{aN}^{3}|<1.36\\times 10^{-16} GeV^{-1} for m_{a}<0.03 eV at the 95% confidence level.

  9. M1 Energy | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona:Oregon:Lowell Point,Massachusetts:Kansas:M1 Energy Jump to:

  10. The Classification of M1-78

    E-Print Network [OSTI]

    G. T. Gussie

    1994-09-15

    The published properties of M1-78 are discussed with the purpose to resolve the object's classification as either a planetary nebula or an ultracompact HII region. A classification as a planetary nebula is rejected primarily because of the high luminosity of the object, but because of the chemical composition and expansion velocity of the nebula, a novel classification is proposed instead: that of an ultracompact HII region with a post-main sequence central star (possibly a WN star). It must therefore follow that observable ultracompact HII regions persist beyond the main sequence lifetimes of at least some massive stars, and so cannot be transient phenomena that are seen only during pre-main sequence or early main sequence evolution.

  11. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    SciTech Connect (OSTI)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde launches at a rate of eight per day for the duration of the deployment. The increased sonde launches for the entire period matches that of the AMIE-Manus campaign and makes possible a far more robust Variational Analysis forcing data set product for the entire campaign, and thus better capabilities for modeling studies and synergistic research using the data from both AMIE sites.

  12. Automotive Engineering Summer Germany (AESG)

    E-Print Network [OSTI]

    Battaglia, Francine

    Automotive Engineering Summer Germany (AESG) #12;2 Automotive Engineering Summer Germany #12 of May 3 automotive classes will be offered (12 ECTS in total) credits can be transferred to UB / VT of May 3 automotive classes will be offered (12 ECTS in total) no knowledge of the German language

  13. Part I--Mechanics J02M.1--Flapping Toy J02M.1--Flapping Toy

    E-Print Network [OSTI]

    Petta, Jason

    /B of the electric and magnetic fields, and the impedance Z = V (z, t)/I(z, t) of the transmission line where I(z, t, (ii) m = 0, and (iii) m/M 1? #12;Part II--E & M J02E.1--Coaxial Transmission Line J02E.1--Coaxial Transmission Line Problem An infinitely long coaxial transmission line made from perfect conductors lies along

  14. Catalysts available from East Germany

    SciTech Connect (OSTI)

    Not Available

    1990-10-01

    This paper reports that a company in East Germany manufactures catalytic reforming, hydrocracking, mild hydrocracking, hydrotreating, and hydrorefining catalysts, among others. The company offers almost 50 catalysts for these processing categories.

  15. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  16. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  17. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  18. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  19. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  20. Automotive Engineering Summer Germany 2015

    E-Print Network [OSTI]

    Battaglia, Francine

    Automotive Engineering Summer Germany 2015 Technische Universität Darmstadt Prof. Dr. rer. nat manufactures and automotive suppliers. For example FZD is working on predictive suspension control strategies and advanced driver assistant systems. Therefore the automotive institute owns a plurality of test vehicles

  1. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  2. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  3. K.K. Gan 1 Building New Opto-boards by 2012?

    E-Print Network [OSTI]

    Gan, K. K.

    K.K. Gan 1 Building New Opto-boards by 2012? August 3, 2010 K.K. Gan The Ohio State University #12 to fabricate prototype BeO boards by vendor 2 weeks for passive components mounting 2 weeks to fabricate/test new boards 8 weeks to fabricate production BeO boards by vendor 2 weeks for passive components

  4. Inversion of wurtzite GaN(0001) by exposure to V. Ramachandran and R. M. Feenstra

    E-Print Network [OSTI]

    Feenstra, Randall

    in the growth rate of GaN on different crystallographic planes [8], pointing to a surfactant effect of Mg on Ga in these films and the carrier concentration was therefore very low [1,2]; dopant activa- tion can be achieved of Mg at GaN growth temperatures is an issue and dopant in- corporation may be rather inefficient [5

  5. AMF Deployment, Black Forest, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.TheoryTuesday, August 10, 20102016 NewsUsers' Executive CommitteeALSNewsVol.Germany

  6. INVITED SPEAKERS S. Albeverio (Bonn, Germany)

    E-Print Network [OSTI]

    Di Nasso, Mauro

    INVITED SPEAKERS S. Albeverio (Bonn, Germany) J. L. Bell (Western Ontario, Canada) V. Benci (Pisa (Tuebingen, Germany). NS2002 NONSTANDARD METHODS and applications in mathematics June 10-16, 2002 Pisa, Italia CONTACT: E-mail: pisa2002@infinitesimals.org WEB: http://docenti.ing.unipi.it/~o18933/Pisa2002

  7. Fourth International Workshop on Termination Dagstuhl, Germany

    E-Print Network [OSTI]

    Giesl, Juergen

    Fourth International Workshop on Termination WST '99 Dagstuhl, Germany May 10­12, 1999 Abstracts #12; Fourth International Workshop on Termination WST '99 Dagstuhl, Germany May 10­12, 1999 Abstracts, The Netherlands) #12; Contents Hans Zantema The Termination Hierarchy for Term Rewriting

  8. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  9. Chromatin Ionic Atmosphere Analyzed by a Mesoscale Electrostatic Hin Hark Gan

    E-Print Network [OSTI]

    Schlick, Tamar

    Chromatin Ionic Atmosphere Analyzed by a Mesoscale Electrostatic Approach Hin Hark Gan and Tamar an electrostatic model to handle multivalent ions and compute the ionic distribution around a mesoscale chromatin

  10. Millimeter-wave GaN high electron mobility transistors and their integration with silicon electronics

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2011-01-01

    In spite of the great progress in performance achieved during the last few years, GaN high electron mobility transistors (HEMTs) still have several important issues to be solved for millimeter-wave (30 ~ 300 GHz) applications. ...

  11. Porous GaN nanowires synthesized using thermal chemical vapor deposition

    E-Print Network [OSTI]

    Kim, Bongsoo

    nanotube-confined reaction [4], arc discharge [5], laser ablation [6], sublimation [7], pyrolysis [8O3)/ carbons with NH3 produced the large-quantity porous GaN nanowires on the iron (Fe)/nickel (Ni

  12. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  13. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?°C. GaN thin films are grown at 200?°C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?°C, which is the lowest process temperature reported for GaN based transistors, so far.

  14. "Down in Turkey, far away": human rights, the Armenian Massacres, and Orientalism in Wilhelmine Germany

    E-Print Network [OSTI]

    Anderson, ML

    2007-01-01

    13785; Isaiah Friedman, Germany, Turkey, and Zionism, 1897–on Germany’s historical support for Turkey’s suppression ofit would be Germany’s task “to raise Turkey culturally, so

  15. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 ?m, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  16. Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.

    SciTech Connect (OSTI)

    Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr; Coltrin, Michael Elliott; Cross, Karen Charlene; Thaler, Gerald

    2009-07-01

    With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs) are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was determined using optical reflectance and the nucleation density was determined using atomic force microscopy (AFM) and Nomarski microscopy. Dislocation density was measured using X-ray diffraction and AFM after coating the surface with silicon nitride to delineate all dislocation types. The program milestone of producing GaN films with dislocation densities of 1 x 10{sup 8} cm{sup -2} was met by silicon nitride treatment of annealed sapphire followed by the multiple deposition of a low density of GaN nuclei followed by high temperature GaN growth. Details of this growth process and the underlying science are presented in this final report along with problems encountered in this research and recommendations for future work.

  17. Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy

    E-Print Network [OSTI]

    Yu, Edward T.

    Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor Engineering and Program in Materials Science and Engineering, University of California at San Diego, La Jolla microscopy is used to image surface potential variations in GaN 0001 grown by hydride vapor phase epitaxy

  18. Thermal stability of amorphous GaN1-xAsx alloys A. X. Levander,1,2

    E-Print Network [OSTI]

    Wu, Junqiao

    Thermal stability of amorphous GaN1-xAsx alloys A. X. Levander,1,2 Z. Liliental-Weber,1 R. Broesler-MBE method.10 Theoretical work has pre- dicted that amorphous GaN could be a technologically useful technological potential, es- pecially in solar energy conversion devices. In this letter we investigate

  19. First-principles studies of beryllium doping of GaN Chris G. Van de Walle* and Sukit Limpijumnong

    E-Print Network [OSTI]

    First-principles studies of beryllium doping of GaN Chris G. Van de Walle* and Sukit Limpijumnong Received 12 October 2000; published 8 June 2001 The structural and electronic properties of beryllium acceptors, and between hydrogen and substitutional beryllium. The results for wurtzite GaN are compared

  20. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  1. Telematics group University of Gttingen, Germany

    E-Print Network [OSTI]

    Fu, Xiaoming

    !) want to communicate "securely" · Trudy (intruder) may intercept, delete, add messages secure sender! · Web browser/server for electronic transactions (e.g., on-line purchases) · on-line banking client University of Göttingen, Germany There are bad guys out there! Q: What can a "bad guy" do? A: a lot

  2. Telematics group University of Gttingen, Germany

    E-Print Network [OSTI]

    Fu, Xiaoming

    , Alice (lovers!) want to communicate "securely" · Trudy (intruder) may intercept, delete, add messages and Alices! · Web browser/server for electronic transactions (e.g., on-line purchases) · on-line banking/04 Telematics group University of Göttingen, Germany There are bad guys out there! Q: What can a "bad guy" do? A

  3. Optimising GaN (1122) hetero-epitaxial templates grown on (1010) sapphire

    E-Print Network [OSTI]

    Pristovsek, Markus; Frentrup, Martin; Han, Yisong; Humphreys, Colin J.

    2015-01-01

    N (112¯2) hetero-epitaxial templates grown on (101¯0) sapphire process was monitored with a two wavelength Laytec EpiTT reflectometer. Two different approaches have been used for the initial GaN buffer. One is a nucleation of GaN islands which were... annealed and overgrown. This approach is described in [2]. The other approach is AlN nucle- ation, which is performed at 5 kPa reactor pressure with a total flow of 21.7 litres/minute. First the re- actor is heated to 1060?C under hydrogen flow and 150 Pa...

  4. Ge doped GaN with controllable high carrier concentration for plasmonic applications

    SciTech Connect (OSTI)

    Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramón; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)] [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Nenstiel, Christian; Hoffmann, Axel [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)] [Institut f?r Festkörperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

    2013-12-09

    Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4?×?10{sup 20} cm{sup ?3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500?cm{sup ?1} and a surface plasma with an energy around 2000?cm{sup ?1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

  5. Part I -Mechanics M05M.1 -Vibration Damping With a Piston M05M.1 -Vibration Damping With a Piston

    E-Print Network [OSTI]

    Petta, Jason

    Part I - Mechanics M05M.1 - Vibration Damping With a Piston M05M.1 - Vibration Damping With a Piston Problem Sometimes it is required to reduce the influence of vertical floor vibration larger than atmospheric pressure. The pistons are typically equipped with a mechanism to dampen

  6. UF in Switzerland, Germany & France Medicine, Microbiology, & Health

    E-Print Network [OSTI]

    Hill, Jeffrey E.

    UF in Switzerland, Germany & France Medicine, Microbiology, & Health Summer A: May 28 - June 14, 2015 Discover various aspects of medicine, microbiology & health in Germany, France & Switzerland Visit, Fluehli, Gruyere, Root, Nenzlingen, & Basel (Switzerland); Freiburg, Staufen, Gunsbach, & Heidelberg

  7. EM Gains Insight from Germany on Salt-Based Repositories

    Broader source: Energy.gov [DOE]

    KARLSRUHE and PEINE, Germany – EM officials recently took part in workshops in Germany to benefit from the exchange of research and experience operating salt-based repositories for radioactive waste.

  8. Learning Deep Sigmoid Belief Networks with Data Augmentation Zhe Gan Ricardo Henao David Carlson Lawrence Carin

    E-Print Network [OSTI]

    Carin, Lawrence

    Learning Deep Sigmoid Belief Networks with Data Augmentation Zhe Gan Ricardo Henao David Carlson Abstract Deep directed generative models are devel- oped. The multi-layered model is designed by stacking available datasets: MNIST, Caltech 101 Silhouettes and OCR letters. 1 Introduction The Deep Belief Network

  9. FOURIER COEFFICIENTS OF MODULAR FORMS ON G2 WEE TECK GAN, BENEDICT GROSS AND GORDAN SAVIN

    E-Print Network [OSTI]

    Gan, Wee Teck

    FOURIER COEFFICIENTS OF MODULAR FORMS ON G2 WEE TECK GAN, BENEDICT GROSS AND GORDAN SAVIN Abstract. We develop a theory of Fourier coefficients for modular forms on the split ex- ceptional group G2 on the group SL2(Z) is the wealth of information carried by the Fourier coefficients an(f), for n 0

  10. Atomic-scale studies on the growth of palladium and titanium on GaN(0001)

    E-Print Network [OSTI]

    Castell, Martin

    Atomic-scale studies on the growth of palladium and titanium on GaN(0001) C. No¨renberg a,b,*, M nitride; Palladium; Titanium; Alloys; Epitaxy; Metal­semiconductor interfaces; Nanostructures; Scanning;Here, we have focused on atomic-scale studies of the ini- tial growth stages of palladium and titanium

  11. Importance of strain for green emitters based on (In, Ga)N films of

    E-Print Network [OSTI]

    Ghosh, Sandip

    , adding more In to lower the energy gap of the active layer for obtaining green-light emissionImportance of strain for green emitters based on (In, Ga)N films of non-polar orientation Sandip for obtaining green-light emitting diodes (LED) and lasers in the wavelength range between 520 and 550 nm

  12. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  13. Lattice Protein Folding With Two and Four-Body Statistical Hin Hark Gan,1

    E-Print Network [OSTI]

    Schlick, Tamar

    Lattice Protein Folding With Two and Four-Body Statistical Potentials Hin Hark Gan,1 Alexander/sequence compatibility of proteins,5,6 homology modeling,7 and protein folding simulations.8 ­10 Currently, most structures. Multibody potentials may help improve our understanding of the cooperativity of protein folding

  14. High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers

    E-Print Network [OSTI]

    Popovic, Zoya

    High-Efficiency X-Band MMIC GaN Power Amplifiers Operating as Rectifiers Michael Litchfield, Scott two 10 x 100j.Lm power combined devices. The MMICs exhibit 67% and 56% power added efficiency at VDD a RF-to-DC efficiency of 64%. The output powers of the two MMIC PAs are around 3.2W. In rectifier mode

  15. Design and Experimental Characterization of an Erbium Doped GaN Waveguide

    E-Print Network [OSTI]

    Wang, Qian

    2012-05-31

    ABSTRACT The goal of this research was to develop an optical amplifier based on Erbium doped GaN waveguides, which can be used in the next-generation of planar integrated optic circuits. This thesis started from the basic concepts of fiber optic...

  16. Integrated Circuit Implementation for a GaN HFETs Driver Circuit

    E-Print Network [OSTI]

    Bakos, Jason D.

    @engr.sc.edu Abstract- The paper presents the design of an integrated circuit (IC) for a 10MHz low power-loss driver exploit the advantages of GaN devices, such as superior switching speed and operation in high-power the authors focus on the design of the IC and present preliminary results and considerations. The driver

  17. Room temperature hydrogen detection using Pd-coated GaN nanowires Wantae Lim,1

    E-Print Network [OSTI]

    Ural, Ant

    Room temperature hydrogen detection using Pd-coated GaN nanowires Wantae Lim,1 J. S. Wright,1 B. P vapor deposition were employed as gas sensors for detection of hydrogen at concentrations from 200­1500 ppm in N2 at 300 K. Palladium coating of the wires improved the sensitivity by a factor of up to 11

  18. Geomagnetic observatory GAN Jakub Velimsky K. Chandra Shakar Rao Lars W. Pedersen Ahmed Muslim

    E-Print Network [OSTI]

    Cerveny, Vlastislav

    ´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic observatory GAN 27.4.2011/KG MFF UK 1 / 16 #12;Participating, Univ. Stuttgart) John Riddick (BGS, retired) Vel´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic Measurements and Observatory Practice, 1996) Vel´imsk´y et al. (ETH,UK,DTU,NGRI,GMO) Geomagnetic observatory

  19. Excitation cross section of erbium-doped GaN waveguides under 980?nm optical pumping

    E-Print Network [OSTI]

    Hui, Rongqing; Xie, R.; Feng, I.-W.; Sun, Z. Y.; Lin, J. Y.; Jiang, H. X.

    2014-08-04

    Excitation cross section of erbium-doped GaN waveguides is measured to be approximately 2.2×10?21cm2 at 980?nm pumping wavelength. This cross section value is found relatively insensitive to the crystalline quality of ...

  20. High Efficiency m-plane LEDs on Low Defect Density Bulk GaN Substrates

    SciTech Connect (OSTI)

    David, Aurelien

    2012-10-15

    Solid-state lighting is a key technology for reduction of energy consumption in the US and worldwide. In principle, by replacing standard incandescent bulbs and other light sources with sources based on light-emitting diodes (LEDs), ultimate energy efficiency can be achieved. The efficiency of LEDs has improved tremendously over the past two decades, however further progress is required for solid- state lighting to reach its full potential. The ability of an LED at converting electricity to light is quantified by its internal quantum efficiency (IQE). The material of choice for visible LEDs is Gallium Nitride (GaN), which is at the basis of blue-emitting LEDs. A key factor limiting the performance of GaN LEDs is the so-called efficiency droop, whereby the IQE of the LED decreases significantly at high current density. Despite decades of research, efficiency droop remains a major issue. Since high-current operation is necessary for practical lighting applications, reducing droop is a major challenge for the scientific community and the LED industry. Our approach to solving the droop issue is the use of newly available low-defect-density bulk GaN non-polar substrates. In contrast to the standard foreign substrates (sapphire, silicon carbide, silicon) used in the industry, we have employed native bulk GaN substrates with very low defect density, thus ensuring exquisite material quality and high IQE. Whereas all commercial LEDs are grown along the c-plane crystal direction of GaN, we have used m-plane non-polar substrates; these drastically modify the physical properties of the LED and enable a reduction of droop. With this approach, we have demonstrated very high IQE performance and low droop. Our results focused on violet and blue LEDs. For these, we have demonstrated very high peak IQEs and current droops of 6% and 10% respectively (up to a high current density of 200A.cm-2). All these results were obtained under electrical operation. These high IQE and low droop values are in line with the program’s milestones. They demonstrate that bulk non-polar GaN substrates represent a disruptive technology for LED performance. Application of this technology to real-world products is feasible, provided that the cost of GaN substrates is compatible with the market’s requirement.

  1. Energy R and D in Germany

    SciTech Connect (OSTI)

    Runci, PJ

    1999-11-01

    Germany's total national (i.e., combined public and private sector) funding for R&D stood at $42 billion in 1997. The private sector accounted for nearly 62% ($24 billion) of the total, while the public sector accounted for approximately 38%. Since the late 1970s, when the public and private sectors each funded roughly half of Germany's R&D, the private sector has steadily assumed a larger and larger role as the dominant supporter of R&D activity, while overall government funding has remained essentially flat for much of the past two decades. In addition to declining relative to private R&D expenditures, public R&D expenditures in Germany declined by 4% in real terms between 1991 and 1997, to approximately $15 billion. The reduction in R&D investments in the public sector can be attributed in large part to the financial challenges associated with German reunification and related shifts in social priorities including efforts to address high unemployment and to rebuild basic infrastructure in the eastern states. R&D expenditures have also declined as a percentage of the total public budget, from a peak of 3.4% in 1985 to 2.7% in 1996. Energy R&D has been the hardest hit of all major socioeconomic areas of R&D expenditure funded by the German government. Between 1981 and 1997, public energy R&D fell from approximately $1.6 billion to $400 million--a 75% real decline. The $850 million reduction in Germany's fission R&D budget (which constituted two-thirds of government R&D investment in 1985) explains some 90% of the funding decline. Negative public perceptions regarding the safety and environmental impacts of nuclear energy have reduced nuclear power's viability as a long-term energy option for Germany. Discussions of a complete nuclear phaseout are now under way. At the same time, the German government has slashed its investments in fossil energy R&D by more than 90%. While energy efficiency and renewable energy technologies have fared relatively well in comparison with other energy technology areas, government support for all areas of energy R&D has declined in absolute terms since 1990. Remaining public and private sector energy R&D investments focus increasingly technology demonstration and commercialization efforts with relatively short time horizons.

  2. Synchrotron radiation x-ray topography and defect selective etching analysis of threading dislocations in GaN

    SciTech Connect (OSTI)

    Sintonen, Sakari, E-mail: sakari.sintonen@aalto.fi; Suihkonen, Sami; Jussila, Henri; Tuomi, Turkka O.; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, 02150 Espoo (Finland); Rudzi?ski, Mariusz [Epitaxy Department, Institute of Electronic Materials Technology, 01-919 Warsaw (Poland); Knetzger, Michael; Meissner, Elke [Fraunhofer Institute for Integrated Systems and Device Technology, 91058 Erlangen (Germany); Danilewsky, Andreas [Kristallographie Institut für Geo- und Umweltnaturwissenschaften, Albert-Ludwigs-Universität Freiburg, 79104 Freiburg (Germany)

    2014-08-28

    The crystal quality of bulk GaN crystals is continuously improving due to advances in GaN growth techniques. Defect characterization of the GaN substrates by conventional methods is impeded by the very low dislocation density and a large scale defect analysis method is needed. White beam synchrotron radiation x-ray topography (SR-XRT) is a rapid and non-destructive technique for dislocation analysis on a large scale. In this study, the defect structure of an ammonothermal c-plane GaN substrate was recorded using SR-XRT and the image contrast caused by the dislocation induced microstrain was simulated. The simulations and experimental observations agree excellently and the SR-XRT image contrasts of mixed and screw dislocations were determined. Apart from a few exceptions, defect selective etching measurements were shown to correspond one to one with the SR-XRT results.

  3. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    E-Print Network [OSTI]

    Yu, K. M.

    2010-01-01

    Highly Mismatched Crystalline and Amorphous GaN 1-x As xrange of 0.17crystalline outside this region.is long enough to form crystalline lattices with uniform

  4. Band alignment between GaN and ZrO{sub 2} formed by atomic layer deposition

    SciTech Connect (OSTI)

    Ye, Gang; Wang, Hong, E-mail: ewanghong@ntu.edu.sg; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong [Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Liu, Zhi Hong [Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)

    2014-07-14

    The band alignment between Ga-face GaN and atomic-layer-deposited ZrO{sub 2} was investigated using X-ray photoelectron spectroscopy (XPS). The dependence of Ga 3d and Zr 3d core-level positions on the take-off angles indicated upward band bending at GaN surface and potential gradient in ZrO{sub 2} layer. Based on angle-resolved XPS measurements combined with numerical calculations, valence band discontinuity ?E{sub V} of 1?±?0.2?eV and conduction band discontinuity ?E{sub C} of 1.2?±?0.2?eV at ZrO{sub 2}/GaN interface were determined by taking GaN surface band bending and potential gradient in ZrO{sub 2} layer into account.

  5. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    SciTech Connect (OSTI)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Materials Department, University of California, Santa Barbara, California 93106 ; Speck, J. S.

    2013-12-02

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?°C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?°C) GaN. Reducing T{sub g}, increased the defect density significantly (>50×) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

  6. Photoluminescence study of the 1.047 eV emission in GaN K. Pressela)

    E-Print Network [OSTI]

    Nabben, Reinhard

    GaN/ AlGaN blue green light emitting diode, which has a much higher quantum efficiency than the SiC blue light emitting diode, became possible.2 Presently the wide bandgap semi- conductor GaN is intensively. Especially the 1.19 eV is very intense. Thus one can think of developing a light emitting diode in the near

  7. Low gap amorphous GaN1-xAsx alloys grown on glass substrate K. M. Yu,1,a

    E-Print Network [OSTI]

    Wu, Junqiao

    absorption coefficient of 105 cm-1 for the amorphous GaN1-xAsx films suggests that relatively thin films-rich GaN1-xAsx Refs. 6­8 and dilute Te-rich ZnOxTe1-x.9 Recently, we overcame the miscibility gap of GaAs fit to the solar spectrum offering the opportunity to design high efficiency multijunction solar cells

  8. Germany Geothermal Region | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky:BoreOpen Energy InformationOpenGerlachMaryland:Germany

  9. Berlin, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece:BajoBelpower Srl Jump to:Falls AssociatesGermany:

  10. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)about aMunich, Germany Munich,

  11. 15.02.99.M1 Export Controls Page 1 of 8 UNIVERSITY RULE

    E-Print Network [OSTI]

    15.02.99.M1 Export Controls Page 1 of 8 UNIVERSITY RULE 15.02.99.M1 Export Controls Approved May 20 to comply with United States export control laws and regulations including, without limitation, those implemented by the Department of Commerce through its Export Administration Regulations (EAR

  12. Status of wind energy in Germany

    SciTech Connect (OSTI)

    Gerdes, G.; Molly, J.P.; Rehfeldt, K.

    1996-12-31

    By the end of 1995 in total 3655 wind turbines (WT`s) were installed in Germany with a total capacity of 1,136 MW. In the year 1995 alone the WT installations grew by 1,070 units with 505 MW. About 40% of the 1995 installations were sold to inland states of Germany with their lower wind speed potential. This fast development occurred in parallel to continuously reduced local state and federal subsidies. The further development is based mainly on the guaranteed reimbursement due to the Electricity Feed Law. But since some time the electricity utilities fight back on all legal and political levels to get cancelled the unloved Electricity Feed Law and since two years the building construction law with the foreseen privilege for WT`s is discussed without any result. All these difficulties affect investors and credit giving banks in such a negative way, that the further annual increase in wind power installation for 1996 could be 10 to 20% less than in 1995. Many of the new commercial Megawatt WT`s have pitch control and variable rotor speed which cause better electrical power quality and lower life time loads. From statistical evaluations on technical data of WT`s a good overview of the further development is derived. 8 refs., 10 figs.

  13. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, E. A.; Shelton, T. C.; Collazo, R.; Sitar, Z.; Maria, J.-P.; Christen, H. M.; Biegalski, M. D.; Mita, S.

    2012-08-27

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {l_brace}111{r_brace} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100 Multiplication-Sign reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

  14. Influence of oxygen in architecting large scale nonpolar GaN nanowires

    E-Print Network [OSTI]

    Patsha, Avinash; Pandian, Ramanathaswamy; Dhara, S

    2015-01-01

    Manipulation of surface architecture of semiconducting nanowires with a control in surface polarity is one of the important objectives for nanowire based electronic and optoelectronic devices for commercialization. We report the growth of exceptionally high structural and optical quality nonpolar GaN nanowires with controlled and uniform surface morphology and size distribution, for large scale production. The role of O contamination (~1-10^5 ppm) in the surface architecture of these nanowires is investigated with the possible mechanism involved. Nonpolar GaN nanowires grown in O rich condition show the inhomogeneous surface morphologies and sizes (50 - 150 nm) while nanowires are having precise sizes of 40(5) nm and uniform surface morphology, for the samples grown in O reduced condition. Relative O contents are estimated using electron energy loss spectroscopy studies. Size-selective growth of uniform nanowires is also demonstrated, in the O reduced condition, using different catalyst sizes. Photoluminescen...

  15. Involvement of the transcription factor FoxM1 in contact inhibition

    SciTech Connect (OSTI)

    Faust, Dagmar; Al-Butmeh, Firas; Linz, Berenike [Institute of Toxicology, Medical Center of the Johannes Gutenberg-University, Obere Zahlbacherstr. 67, 55131 Mainz (Germany)] [Institute of Toxicology, Medical Center of the Johannes Gutenberg-University, Obere Zahlbacherstr. 67, 55131 Mainz (Germany); Dietrich, Cornelia, E-mail: cdietric@uni-mainz.de [Institute of Toxicology, Medical Center of the Johannes Gutenberg-University, Obere Zahlbacherstr. 67, 55131 Mainz (Germany)] [Institute of Toxicology, Medical Center of the Johannes Gutenberg-University, Obere Zahlbacherstr. 67, 55131 Mainz (Germany)

    2012-10-05

    Highlights: Black-Right-Pointing-Pointer The transcription factor FoxM1 is downregulated upon contact inhibition. Black-Right-Pointing-Pointer The decrease in FoxM1 levels occurs very likely due to inhibition of ERK activity. Black-Right-Pointing-Pointer The decrease in FoxM1 is not sufficient, but required for contact inhibition. Black-Right-Pointing-Pointer We propose a new model of contact inhibition involving pRB/E2F and FoxM1. -- Abstract: Contact inhibition is a crucial mechanism regulating proliferation in vitro and in vivo. Although it is generally accepted that contact inhibition plays a pivotal role in maintaining tissue homeostasis, the molecular mechanisms of contact inhibition are still not fully understood. FoxM1 is known as a proliferation-associated transcription factor and is upregulated in many cancer types. Vice versa, anti-proliferative signals, such as TGF-{beta} and differentiation signals decrease FoxM1 expression. Here we investigated the role of FoxM1 in contact inhibition in fibroblasts. We show that protein expression of FoxM1 is severely and rapidly downregulated upon contact inhibition, probably by inhibition of ERK activity, which then leads to decreased expression of cyclin A and polo-like kinase 1. Vice versa, ectopic expression of FoxM1 prevents the decrease in cyclin A and polo-like kinase 1 and causes a two-fold increase in saturation density indicating loss of contact inhibition. Hence, we show that downregulation of FoxM1 is required for contact inhibition by regulating expression of cyclin A and polo-like kinase 1.

  16. Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires

    SciTech Connect (OSTI)

    Samanta, Chandan [Department of Physics, Indian Institute of Technology Kanpur (India)] [Department of Physics, Indian Institute of Technology Kanpur (India); Chander, D. Sathish [Department of Physics, Indian Institute of Technology Kanpur (India) [Department of Physics, Indian Institute of Technology Kanpur (India); Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Ramkumar, J. [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India)] [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Dhamodaran, S., E-mail: kdams2003@gmail.com [Department of Physics, Indian Institute of Technology Kanpur (India)

    2012-04-15

    Graphical abstract: GaN nanowires with controlled diameter and aspect ratio has been grown using a simple CVD technique. The growth kinetics of CVD grown nanowires investigated in detail for different catalysts and their diameters. A critical diameter important to distinguish the growth regimes has been discussed in detail. The results are important which demonstrates the growth of diameter and aspect ratio controlled GaN nanowires and also understand their growth kinetics. Highlights: Black-Right-Pointing-Pointer Controlled diameter and aspect ratio of GaN nanowires achieved in simple CVD reactor. Black-Right-Pointing-Pointer Nanowire growth kinetics for different catalyst and its diameters were understood. Black-Right-Pointing-Pointer Adatoms vapor pressure inside reactor plays a crucial role in growth kinetics. Black-Right-Pointing-Pointer Diffusion along nanowire sidewalls dominate for gold and nickel catalysts. Black-Right-Pointing-Pointer Gibbs-Thomson effect dominates for palladium catalyst. -- Abstract: GaN nanowires were grown using chemical vapor deposition with controlled aspect ratio. The catalyst and catalyst-diameter dependent growth kinetics is investigated in detail. We first discuss gold catalyst diameter dependent growth kinetics and subsequently compare with nickel and palladium catalyst. For different diameters of gold catalyst there was hardly any variation in the length of the nanowires but for other catalysts with different diameter a strong length variation of the nanowires was observed. We calculated the critical diameter dependence on adatoms pressure inside the reactor and inside the catalytic particle. This gives an increasing trend in critical diameter as per the order gold, nickel and palladium for the current set of experimental conditions. Based on the critical diameter, with gold and nickel catalyst the nanowire growth was understood to be governed by limited surface diffusion of adatoms and by Gibbs-Thomson effect for the palladium catalyst.

  17. K.K. Gan B Layer Workshop 1 Opto-Link Upgrade

    E-Print Network [OSTI]

    Gan, K. K.

    -Link Working Group/common projects #12;K.K. Gan B Layer Workshop 3 Need New Opto-Link for B Layer? opto current pixel opto-link architecture to take advantage of R&D effort and production experience #12;K: 14 x 1015 1-MeV neq/cm2 2.7 x 1015 p/cm2 or 71 Mrad for 24 GeV protons above estimates include 50

  18. GAnGS: Gather, Authenticate 'n Group Securely Chia-Hsin Owen Chen

    E-Print Network [OSTI]

    Xu, Wenyuan

    in a scalable, secure, and easy to use fashion. In this paper, we propose GAnGS, a protocol for the se- cure Factors This research was supported in part by the iCAST project under grant NSC96-3114-P-001-002-Y from or any of its agencies. Permission to make digital or hard copies of all or part of this work

  19. Optimization of ion-atomic beam source for deposition of GaN ultrathin films

    SciTech Connect (OSTI)

    Mach, Jind?ich, E-mail: mach@fme.vutbr.cz; Kolíbal, Miroslav; Zlámal, Jakub; Voborny, Stanislav; Bartošík, Miroslav; Šikola, Tomᚠ[Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno (Czech Republic); CEITEC BUT, Brno University of Technology, Technická 10, 61669 Brno (Czech Republic); Šamo?il, Tomᚠ[Institute of Physical Engineering, Brno University of Technology, Technická 2, 616 69 Brno (Czech Republic)

    2014-08-15

    We describe the optimization and application of an ion-atomic beam source for ion-beam-assisted deposition of ultrathin films in ultrahigh vacuum. The device combines an effusion cell and electron-impact ion beam source to produce ultra-low energy (20–200 eV) ion beams and thermal atomic beams simultaneously. The source was equipped with a focusing system of electrostatic electrodes increasing the maximum nitrogen ion current density in the beam of a diameter of ?15 mm by one order of magnitude (j ? 1000 nA/cm{sup 2}). Hence, a successful growth of GaN ultrathin films on Si(111) 7 × 7 substrate surfaces at reasonable times and temperatures significantly lower (RT, 300?°C) than in conventional metalorganic chemical vapor deposition technologies (?1000?°C) was achieved. The chemical composition of these films was characterized in situ by X-ray Photoelectron Spectroscopy and morphology ex situ using Scanning Electron Microscopy. It has been shown that the morphology of GaN layers strongly depends on the relative Ga-N bond concentration in the layers.

  20. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect (OSTI)

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  1. LET THE SUN SHINE: OPTIMAL DEPLOYMENT OF PHOTOVOLTAICS IN GERMANY

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    LET THE SUN SHINE: OPTIMAL DEPLOYMENT OF PHOTOVOLTAICS IN GERMANY Anna CRETI Jérôme JOAUG Cahier n:chantal.poujouly@polytechnique.edu hal-00751743,version1-14Nov2012 #12;Let the sun shine: optimal deployment of photovoltaics in Germany-in tari¤s to foster the di¤usion of photovoltaics is recently being rediscussed in several countries

  2. Excellent opportunities for academic careers at every stage in Germany

    E-Print Network [OSTI]

    Rossak, Wilhelm R.

    Excellent opportunities for academic careers at every stage in Germany SCHOLARSHIP PROGRAMS-Schiller-Universität Jena Max-Wien-Platz 1 07743 Jena Germany Phone: +49 3641 947960 Fax: +49 3641 947962 www sources to improved renewable energy or to wherever your imagination takes us. Without photonic

  3. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

    SciTech Connect (OSTI)

    Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.; Tadjer, Marko J.

    2014-08-14

    The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200?°C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100?°C exceeds the quality of the as-grown films. At 1200?°C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200?°C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150?°C due to crystal quality and surface morphology considerations.

  4. Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy

    E-Print Network [OSTI]

    Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride and Electrical and Computer Engineering and Photonics Center, Boston University, Boston, Massachusetts, 02215 R in unintentionally doped GaN grown by hydride vapor phase epitaxy. Low temperature (4 K), time-integrated PL spectra

  5. Observation of standing waves at steps on the GaN,,0001... pseudo-,,11... surface by scanning tunneling spectroscopy at room temperature

    E-Print Network [OSTI]

    Li, Lian

    Observation of standing waves at steps on the GaN,,0001... pseudo-,,1Ã1... surface by scanning August 2006; published online 25 September 2006 Standing waves formed at steps of the GaN 0001 pseudo- 1, reflected elec- tron waves emerge to interfere with incoming waves to pro- duce standing waves, thus

  6. An Analysis of Residential PV System Price Differences Between the United States and Germany

    E-Print Network [OSTI]

    Seel, Joachim

    2014-01-01

    electricity prices over time (similar to the new reality in GermanyGermany $/W German system price $ 2011/W FiT $/kWh Electricityprice differences between Germany and the United States affect the associated electricity

  7. 15.99.01.M1 Human Subjects in Research Page 1 of 9 UNIVERSITY RULE

    E-Print Network [OSTI]

    15.99.01.M1 Human Subjects in Research Page 1 of 9 UNIVERSITY RULE 15.99.01.M1 Human Subjects relating to human subjects research including 45 C.F.R., Part 46 and 21 C.F.R., Parts 50 and 56. Texas A&M University assures that all of its research involving human subjects will comply with the terms of its

  8. Selective area growth and characterization of GaN nanocolumns, with and without an InGaN insertion, on semi-polar (11–22) GaN templates

    SciTech Connect (OSTI)

    Bengoechea-Encabo, A.; Albert, S.; Barbagini, F.; Sanchez-Garcia, M. A.; Calleja, E. [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain)] [ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n 28040 Madrid (Spain); Zuñiga-Perez, J.; Mierry, P. de [CRHEA-CNRS, 06560 Valbonne (France)] [CRHEA-CNRS, 06560 Valbonne (France); Trampert, A. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)] [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2013-12-09

    The aim of this work is the selective area growth (SAG) of GaN nanocolumns, with and without an InGaN insertion, by molecular beam epitaxyon semi-polar (11–22) GaN templates. The high density of stacking faults present in the template is strongly reduced after SAG. A dominant sharp photoluminescence emission at 3.473 eV points to high quality strain-free material. When embedding an InGaN insertion into the ordered GaN nanostructures, very homogeneous optical properties are observed, with two emissions originating from different regions of each nanostructure, most likely related to different In contents on different crystallographic planes.

  9. Electroreflectance study of the effect of {gamma} radiation on the optical properties of epitaxial GaN films

    SciTech Connect (OSTI)

    Belyaev, A. E.; Klyui, N. I. Konakova, R. V.; Lukyanov, A. N.; Danilchenko, B. A.; Sveshnikov, J. N.; Klyui, A. N.

    2012-03-15

    Experimental data on the electroreflectance spectra of {gamma}-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 10{sup 5}-2 Multiplication-Sign 10{sup 6} rad. The theoretical electroreflectance spectra calculated on the basis of a model of three types of transitions are in agreement with experimental data with reasonable accuracy. The energies and broadenings of the transitions derived in the context of the model give grounds to infer that, in the GaN films, there are internal stresses dependent on the {gamma}-irradiation dose.

  10. The impact of nanoperforation on persistent photoconductivity and optical quenching effects in suspended GaN nanomembranes

    SciTech Connect (OSTI)

    Volciuc, Olesea, E-mail: olesea.volciuc@gmail.com [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany) [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Braniste, Tudor [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of)] [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Tiginyanu, Ion, E-mail: tiginyanu@asm.md [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of) [National Center for Materials Study and Testing, Technical University of Moldova, Chisinau 2004 (Moldova, Republic of); Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of); Stevens-Kalceff, Marion A. [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia)] [School of Physics, University of New South Wales, Sydney NSW 2052 (Australia); Ebeling, Jakob; Aschenbrenner, Timo; Hommel, Detlef; Gutowski, Jürgen [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany)] [Institute of Solid State Physics, University of Bremen, Bremen 28334 (Germany); Ursaki, Veaceslav [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)] [Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau 2028 (Moldova, Republic of)

    2013-12-09

    We report on fabrication of suspended ?15?nm thick GaN membranes nanoperforated in an ordered fashion using direct writing of negative charges by focused ion beam and subsequent photoelectrochemical etching of GaN epilayers. Both continuous and nanoperforated membranes exhibit persistent photoconductivity (PPC), which can be optically quenched under excitation by 546?nm radiation. Optical quenching of PPC occurs also under relatively intense intrinsic excitation of nanoperforated membranes by 355?nm radiation at T?

  11. US Department of Energy (DOE)/Gosatomnadzor (GAN) of Russia project at the Petersburg Nuclear Physics Institute (PNPI)

    SciTech Connect (OSTI)

    Baranov, I.A.; Konoplev, K.A. [Petersburg Nuclear Physics Institute, Gatchina (Russian Federation); Hauser, G.C. [Sandia National Lab., Albuquerque, NM (United States)] [and others

    1997-08-01

    This paper presents a summary of work accomplished within the scope of the DOE-Gosatomnadzor (GAN) Agreement to reduce vulnerability to theft of direct-use nuclear materials in Russia. The DOE-GAN agreement concerns the Russian Academy of Science B.P. Konstantinov Petersburg Nuclear Physics Institute (PNPI), located 45 kilometers from St. Petersburg. The PNPI operates facilities to research basic nuclear physics. Current world conditions require particular attention to the issue of Material Protection, Control, and Accounting (MPC&A) of nuclear materials. The long-term plan to increase security at the facility is outlined, including training, physical protection upgrades, and material control and accountability. 4 figs.

  12. Nucleation of single GaN nanorods with diameters smaller than 35 nm by molecular beam epitaxy

    SciTech Connect (OSTI)

    Chen, Yen-Ting [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Araki, Tsutomu [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan)] [Department of Electrical and Electronic Engineering, Ritsumeikan University, 525-8577 Shiga (Japan); Palisaitis, Justinas; Persson, Per O. Å.; Olof Holtz, Per; Birch, Jens [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)] [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden); Chen, Li-Chyong [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China)] [Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Chen, Kuei-Hsien [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China) [Institute of Atomic and Molecular Sciences, Academia Sinica, 10617 Taipei, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, 10617 Taipei, Taiwan (China); Nanishi, Yasushi [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)] [Global Innovation Research Organization, Ritsumeikan University, 525-8577 Shiga (Japan)

    2013-11-11

    Nucleation mechanism of catalyst-free GaN nanorod grown on Si(111) is investigated by the fabrication of uniform and narrow (<35 nm) nanorods without a pre-defined mask by molecular beam epitaxy. Direct evidences show that the nucleation of GaN nanorods stems from the sidewall of the underlying islands down to the Si(111) substrate, different from commonly reported ones on top of the island directly. Accordingly, the growth and density control of the nanorods is exploited by a “narrow-pass” approach that only narrow nanorod can be grown. The optimal size of surrounding non-nucleation area around single nanorod is estimated as 88 nm.

  13. High temperature electron spin dynamics in bulk cubic GaN: Nanosecond spin lifetimes far above room-temperature

    SciTech Connect (OSTI)

    Buß, J. H.; Schaefer, A.; Hägele, D.; Rudolph, J. [Arbeitsgruppe Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Universitätsstraße 150, D-44780 Bochum (Germany); Schupp, T.; As, D. J. [Department of Physics, University of Paderborn, Warburger Str. 100, D-33095 Paderborn (Germany)

    2014-11-03

    The electron spin dynamics in n-doped bulk cubic GaN is investigated for very high temperatures from 293?K up to 500?K by time-resolved Kerr-rotation spectroscopy. We find extraordinarily long spin lifetimes exceeding 1?ns at 500?K. The temperature dependence of the spin relaxation time is in qualitative agreement with predictions of Dyakonov-Perel theory, while the absolute experimental times are an order of magnitude shorter than predicted. Possible reasons for this discrepancy are discussed, including the role of phase mixtures of hexagonal and cubic GaN as well as the impact of localized carriers.

  14. Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

    SciTech Connect (OSTI)

    Mamand, S.M., E-mail: soran.mamand@univsul.net [Department of Physics, College of Science, University of Sulaimani, Sulaimanyah, Iraqi Kurdistan (Iraq); Omar, M.S. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)] [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Muhammad, A.J. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)] [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq)

    2012-05-15

    Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

  15. Evaluation of GaN substrates grown in supercritical basic ammonia

    SciTech Connect (OSTI)

    Saito, Makoto; Yamada, Hisashi; Iso, Kenji; Sato, Hitoshi; Hirasawa, Hirohiko; Kamber, Derrick S.; Hashimoto, Tadao; Baars, Steven P. den; Speck, James S.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2009-02-02

    GaN crystals grown by the basic ammonothermal method were investigated for their use as substrates for device regrowth. X-ray diffraction analysis indicated that the substrates contained multiple grains while secondary ion mass spectroscopy (SIMS) revealed a high concentration of hydrogen, oxygen, and sodium. Despite these drawbacks, the emission from the light emitting diode structures grown by metal organic chemical vapor deposition on both the c-plane and m-plane epitaxial wafers was demonstrated. The SIMS depth profiles showed that the diffusion of the alkali metal from the substrate into the epitaxial film was small, especially in the m-direction.

  16. p-type GaN grown by phase shift epitaxy

    SciTech Connect (OSTI)

    Zhong, M.; Steckl, A. J., E-mail: a.steckl@uc.edu [Department of Electrical Engineering and Computing Systems, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Roberts, J. [Nitronex Corporation, Raleigh, North Carolina 27606 (United States)] [Nitronex Corporation, Raleigh, North Carolina 27606 (United States); Kong, W.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)] [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States)

    2014-01-06

    Phase shift epitaxy (PSE) is a periodic growth scheme, which desynchronizes host material growth process from dopant incorporation, allowing independent optimization. p-type doping of GaN with Mg by PSE is accomplished with molecular beam epitaxy by periodic shutter action (in order to iterate between Ga- and N-rich surface conditions) and by adjusting time delays between dopant and Ga shutters. Optimum PSE growth was obtained by turning on the Mg flux in the N-rich condition. This suppresses Mg self-compensation at high Mg concentration and produces fairly high hole concentrations (2.4?×?10{sup 18}?cm{sup ?3})

  17. Lattice location of implanted $^{147}$Nd and $^{147*}$Pm in GaN using emission channeling

    E-Print Network [OSTI]

    De Vries, B; Vantomme, A; Correia, J G

    2003-01-01

    The lattice location of $^{147}$Nd and $^{147^{*}}$Pm in thin-film, single-crystalline hexagonal GaN was studied by means of the emission channeling technique. The angular emission yields of $\\beta^{-}$-particles and conversion electrons emitted by the radioactive isotopes $^{147}$Nd and $^{147^{*}}$Pm were measured using a position-sensitive detector following 60 keV room temperature implantation at a dose of 1 $\\times 10^{13}$ cm$^{-2}$ and annealing at 900°C. The emission patterns around the [0001], [1102], [1101], and [2113] crystal axes give direct evidence that the majority (70%) of Nd and Pm atoms occupy substitutional Ga sites.

  18. Mission hazard assessment for STARS Mission 1 (M1) in the Marshall Islands area

    SciTech Connect (OSTI)

    Outka, D.E.; LaFarge, R.A.

    1993-07-01

    A mission hazard assessment has been performed for the Strategic Target System Mission 1 (known as STARS M1) for hazards due to potential debris impact in the Marshall Islands area. The work was performed at Sandia National Laboratories as a result of discussion with Kwajalein Missile Range (KMR) safety officers. The STARS M1 rocket will be launched from the Kauai Test Facility (KTF), Hawaii, and deliver two payloads to within the viewing range of sensors located on the Kwajalein Atoll. The purpose of this work has been to estimate upper bounds for expected casualty rates and impact probability or the Marshall Islands areas which adjoin the STARS M1 instantaneous impact point (IIP) trace. This report documents the methodology and results of the analysis.

  19. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, Elisibeth A.; Shelton, T C; Mita, S; Gaddy, Brian E.; Irving, D L; Christen, Hans M; Sitar, Z; Biegalski, Michael D; Maria, Jon Paul

    2012-01-01

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.

  20. M1 Master Mathematiques de Metz Mod`eles probabilistes en finance

    E-Print Network [OSTI]

    Thalmaier, Anton

    M1 ­ Master Math´ematiques de Metz Mod`eles probabilistes en finance 2007/2008 R. Lamberton, B. Lapeyre: Introduction au calcul stochastique appliqu´e `a la finance. Ellipses, 1997 (b) S. E. Shreve: Stochastic calculus for finance. I: The binomial asset pricing model. Springer Finance, 2004 (c

  1. 29.01.03.M1.28 Information Resources Security Surveillance Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.28 Information Resources ­ Security Surveillance Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.28 Information Resources ­ Security Surveillance Approved April 13, 2010 Revised by the University Police Department #12;29.01.03.M1.28 Information Resources ­ Security Surveillance Page 2 of 4

  2. Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy

    E-Print Network [OSTI]

    Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy Engineering and the Photonics Center, Boston University, 8 Saint Mary's St., Boston, MA 02215-2421, USA R hydride vapor phase epitaxy. We found the threshold for bulk stimulated emission to be 3.4 MW cm2

  3. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

  4. New probe of M1 and E1 strengths in GDR regions

    SciTech Connect (OSTI)

    Hayakawa, T. [Japan Atomic Energy Agency and National Astronomical Observatory in Japan (Japan); Ogata, K. [RCNP, Osaka University (Japan); Miyamoto, S.; Mochizuki, T.; Horikawa, K.; Amano, S. [University of Hyogo (Japan); Imazaki, K.; Li, D.; Izawa, Y. [Institute for Laser Technology (Japan); Chiba, S. [Tokyo Institute of Technology (Japan)

    2014-05-02

    The M1 strengths (or level density of 1{sup +} states) are of importance for estimation of interaction strengths between neutrinos and nuclei for the study of the supernova neutrino-process. In 1957, Agodi predicted theoretically angular distribution of neutrons emitted from states excited via dipole transitions with linearly polarized gamma-ray beam at the polar angle of ?=90° should be followed by a simple function, a + b cos(2?), where ?, is azimuthal angel. However, this theoretical prediction has not been verified over the wide mass region except for light nuclei as deuteron. We have measured neutron angular distributions with (polarized gamma, n) reactions on Au, Nal, and Cu. We have verified the Agodi's prediction for the first time over the wide mass region. This suggests that (polarized gamma, n) reactions may be useful tools to study M1 strengths in giant resonance regions.

  5. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²? cm?³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹? cm?³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  6. IUP SID M1, 2005 T.P. SAS numero 01

    E-Print Network [OSTI]

    Lagnoux, Agnès

    IUP SID M1, 2005 T.P. SAS num´ero 01 Apr`es quelques g´en´eralit´es sur le logiciel SAS, l'objet de place l'environnement UNIX n´ecessaire `a l'utilisation de SAS dans des conditions commodes. G´en´eralit´es sur le logiciel SAS Le logiciel SAS est de conception am´ericaine : il est developp´e et commercialis

  7. Surface Termination of M1 Phase and Rational Design of Propane Ammoxidation Catalysts

    SciTech Connect (OSTI)

    Guliants, Vadim

    2015-02-16

    This final report describes major accomplishments in this research project which has demonstrated that the M1 phase is the only crystalline phase required for propane ammoxidation to acrylonitrile and that a surface monolayer terminating the ab planes of the M1 phase is responsible for their activity and selectivity in this reaction. Fundamental studies of the topmost surface chemistry and mechanism of propane ammoxidation over the Mo-V-(Te,Sb)-(Nb,Ta)-O M1 and M2 phases resulted in the development of quantitative understanding of the surface molecular structure – reactivity relationships for this unique catalytic system. These oxides possess unique catalytic properties among mixed metal oxides, because they selectively catalyze three alkane transformation reactions, namely propane ammoxidation to acrylonitrile, propane oxidation to acrylic acid and ethane oxidative dehydrogenation, all of considerable economic significance. Therefore, the larger goal of this research was to expand this catalysis to other alkanes of commercial interest, and more broadly, demonstrate successful approaches to rational design of improved catalysts that can be applied to other selective (amm)oxidation processes.

  8. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  9. Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

    SciTech Connect (OSTI)

    Zhang, D. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Bian, J.M., E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Qin, F.W.; Wang, J.; Pan, L. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Zhao, J.M. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhao, Y.; Bai, Y.Z. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Du, G.T. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2011-10-15

    Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

  10. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    SciTech Connect (OSTI)

    Heo, Junseok; Guo Wei; Bhattacharya, Pallab

    2011-01-10

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density ({approx}10{sup 8} cm{sup -2}) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at {lambda}=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of {approx}120 kW/cm{sup 2} and the spontaneous emission factor {beta} is estimated to be 0.08.

  11. Demonstration of forward inter-band tunneling in GaN by polarization engineering

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

    2011-12-05

    We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

  12. Competition on Software Verification University of Passau, Germany

    E-Print Network [OSTI]

    Beyer, Dirk

    and Analysis of Systems (TACAS). 1 Introduction The area of verification, in particular model checking, has). Several new and powerful software-verification tools became available, but they have not been comparedCompetition on Software Verification (SV-COMP) Dirk Beyer University of Passau, Germany Abstract

  13. NEW MACHINE VISION APPLICATIONS IN GERMANY Claus-E. Liedtke

    E-Print Network [OSTI]

    applications in the biomedical field, the printing industry, industrial automation, navigation, remote sensing activities. 2. 3D SCENE ANALYSIS FOR QUALITY CONTROL In industrial automation an increased request, or concepts developed at research institutes and the industry in Germany. 1. INTRODUCTION Research

  14. NEW MACHINE VISION APPLICATIONS IN GERMANY Claus-E. Liedtke

    E-Print Network [OSTI]

    applications in the biomedical field, the printing industry, industrial automation, navigation, remote sensing SCENE ANALYSIS FOR QUALITY CONTROL In industrial automation an increased request for computer vision, or concepts developed at research institutes and the industry in Germany. 1. INTRODUCTION Research

  15. Synchrotron infrared and Raman spectroscopy of microdiamonds from Erzgebirge, Germany

    E-Print Network [OSTI]

    Cartigny, Pierre

    (Western Gneiss Region), Germany (Erzgebirge massif), Greece (Rhodope), and Russia (Ural Mountains) [1 of Geochemistry and Analytical Chemistry, Moscow, Russia e Institute of Geophysics and Planetary Physics and microcrystalline dia- monds in the Ural Mountains [12], have been repeatedly confirmed and unconditionally accepted

  16. Ecient elasto-plastic simulation ICA, University of Stuttgart, Germany

    E-Print Network [OSTI]

    Wieners, Christian

    EÃ?cient elasto-plastic simulation C. Wieners ICA, University of Stuttgart, Germany Summary. In this paper we describe a method for the construction of radial re- turn algorithms to the plasticity models plasticity, the constitutive equations are determined by the free energy functional and a monotone function

  17. Industrial heat pumps in Germany -potentials, technological development

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    1 Industrial heat pumps in Germany - potentials, technological development and application examples of Energy (IER) Universität Stuttgart ACHEMA 2012 Application of industrial heat pumps Improving energy-efficiency of industrial processes 13. Juni 2012 #12;ACHEMA 2012 - Industrial heat pumps 21st June 2012 Types of Heat Pumps

  18. CLIMATE POLICY OUTCOMES IN GERMANY Environmental Performance and Environmental Damage

    E-Print Network [OSTI]

    Qiu, Weigang

    CLIMATE POLICY OUTCOMES IN GERMANY Environmental Performance and Environmental Damage in Eleven and is exceeding its ambitious Kyoto commitment. Hence, it is commonly portrayed as a climate-policy success story. Third, researchers on climate policies should more often begin with outcomes, work backward to policies

  19. Biomedical Engineering Specimen Curriculum Boston University Dresden, Germany

    E-Print Network [OSTI]

    Biomedical Engineering Specimen Curriculum Boston University Dresden, Germany Spring Semester Circuits II, Lab 4 BME 271 Biomedical Instrumentation 4 BME 210 Physiological Transport 3 BME 252 Systems Physiology 3 Math 194 Linear Algebra 3 BME 260 Analysis of Biomedical Data 3 BME ELEC BME Elective 3 BME 103

  20. A survey of environmental needs and innovative technologies in Germany

    SciTech Connect (OSTI)

    Voss, C.F.; Roberds, W.J. [Golder Associates, Inc., Redmond, WA (United States)

    1995-05-01

    The International Technology Program (IT?), formerly the international Technology Exchange Program (ITEP), of the Department of Energy`s (DOE`s) Office of Environmental Restoration and Waste Management (EM) is responsible for promoting: (1) the import of innovative technologies to better address EM`s needs; and (2) the export of US services into foreign markets to enhance US competitiveness. Under this program: (1) the environmental restoration market in Germany was evaluated, including the description of the general types of environmental problems, the environmental regulations, and specific selected contaminated sites; and (2) potentially innovative environmental restoration technologies, either commercially available or under development in Germany, were identified, described and evaluated. It was found that: (1) the environmental restoration market in Germany is very large, on the order of several billion US dollars per year, with a significant portion possibly available to US businesses; and (2) a large number (54) of innovative environmental restoration technologies, which are either commercially available or under development in Germany, may have some benefit to the DOE EM program and should be considered for transfer to the US.

  1. Method of growing GaN films with a low density of structural defects using an interlayer

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D. (Richmond, CA)

    2003-01-01

    A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

  2. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  3. X-Band MMIC GaN Power Amplifiers Designed for High-Efficiency Supply-Modulated Transmitters

    E-Print Network [OSTI]

    Popovic, Zoya

    MMICs that utilize 0.15 µm GaN on SiC process technology are presented. Under continuous wave operating. Process Technology and Model The MMICs were fabricated in a 0.15 µm gate length process with an Al are Imax=1.15 A/mm, gm,max=380 mS/mm, and 3.5 V pinch-off at Vds=10 V. Device breakdown voltage exceeds 50

  4. This program will travel to Geneva, Fluehli, Gruyere, Root, Nenzlingen, & Basel (Switzerland); Freiburg, Staufen, Gunsbach, & Heidelberg (Germany); and

    E-Print Network [OSTI]

    Jawitz, James W.

    (Switzerland); Freiburg, Staufen, Gunsbach, & Heidelberg (Germany); and Strasbourg (France). College DISCOVER various aspects of medicine, microbiology & health in Germany, France & Switzerland VISIT key & HEALTH Summer A: TBA 2016| UF in Switzerland, Germany & France EXCURSIONS Visit the World Health

  5. Who Is a Nazi Victim? Constructing Victimhood Through Post-War Reparations in France, Germany, Switzerland

    E-Print Network [OSTI]

    Ludi, Regula

    2005-01-01

    Socialism: An Example of how Switzerland Came to Terms within France, Germany and Switzerland 1 (CEES, 26 May 2005) MyFrance, Germany and Switzerland. Let’s take the case of

  6. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metal–semiconductor–metal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  7. Staying Civil: Conscientious Objection and Civil Society in West Germany, 1956-1966 

    E-Print Network [OSTI]

    Donnelly, Jared Ryan

    2015-07-22

    Union of Germany (Christlich Demokratische Union Deutschlands) CND Campaign for Nuclear Disarmament CNVA Committee for Nonviolent Action CO Conscientious Objection CSU Christian Social Union in Bavaria (Christlich-Soziale Union in Bayern) DAC... (Deutsche Partei) EDC Pan-European Defense Community vi EKD West Germany’s Protestant Church (Evangelische Kirche in Deutschland) FDP Free Democratic Party (Freie Demokratische Partei) FRG Federal Republic of Germany GdW Group of Military Service...

  8. 29.01.03.M1.07 Information Resources Change Management Page 1 of 6 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.07 Information Resources ­ Change Management Page 1 of 6 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.07 Information Resources ­ Change Management Approved July 18, 2005 Revised February management of changes to information resources. Definitions Confidential - Information that must be protected

  9. 29.01.03.M1.15 Information Resources Physical Access Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.15 Information Resources ­ Physical Access Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.15 Information Resources ­ Physical Security Approved July 18, 2005 Revised February to information resource facilities is extremely important to an overall security program. Therefore, the purpose

  10. 29.01.03.M1.03 Information Resources-Account Management Page 1 of 5 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.03 Information Resources- Account Management Page 1 of 5 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.03 Information Resources ­ Account Management Approved July 18, 2005 Revised February of establishing confidence in the identity of users or information systems. There are many ways to authenticate

  11. 29.01.03.M1.12 Information Resources Network Access Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.12 Information Resources ­ Network Access Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.12 Information Resources ­ Network Access Approved July 28, 2005 Revised May 28, 2010 Administrative Procedure Statement The information resources network infrastructure in Bryan/College Station

  12. 29.01.03.M1.06 Information Resources Backup and Recovery Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.06 Information Resources ­ Backup and Recovery Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.06 Information Resources ­ Backup and Recovery Approved July 18, 2005 Revised February for mission critical information, and associated information resources, that are stored in an electronic

  13. 29.01.03.M1.22 Information Resources Vendor Access Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.22 Information Resources ­ Vendor Access Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.22 Information Resources ­ Vendor Access Approved July 18, 2005 Revised December 4, 2009 that will mitigate information security risks associated with vendor access. Reason for SAP Vendors play an important

  14. 29.01.03.M1.13 Information Resources Network Configuration Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.13 Information Resources ­ Network Configuration Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.13 Information Resources ­Network Configuration Approved July 18, 2005 Revised for change of the network infrastructure. Definitions Information Resources (IR) - the procedures, equipment

  15. 29.01.03. M1.11 Information Resources Intrusion Detection Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03. M1.11 Information Resources ­ Intrusion Detection Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.11 Information Resources ­ Intrusion Detection Approved July 18, 2005 Revised April 27 security policy. As information systems grow in complexity, effective security systems must evolve

  16. 29.01.03.M1.32 Information Resources Disaster Recovery Planning Page 1 of 2 STANDARD ADMINISTRATIVE PROCEDURES

    E-Print Network [OSTI]

    29.01.03.M1.32 Information Resources ­ Disaster Recovery Planning Page 1 of 2 STANDARD ADMINISTRATIVE PROCEDURES 29.01.03.M1.32 Information Resources ­ Disaster Recovery Planning Revised November 5 and predictable manner. Definitions Information Resources (IR) - the procedures, equipment, and software

  17. 29.01.03.M1 Security of Electronic Information Resources Page 1 of 3 UNIVERSITY RULE

    E-Print Network [OSTI]

    29.01.03.M1 Security of Electronic Information Resources Page 1 of 3 UNIVERSITY RULE 29.01.03.M1 Security of Electronic Information Resources Approved May 27, 2002 Revised May 28, 2009 Revised October 15&M) electronic information resources are vital academic and administrative assets which require appropriate

  18. 29.01.03.M1.08 Information Resources Email Use Page 1 of 2 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.08 Information Resources ­ Email Use Page 1 of 2 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.08 Information Resources ­ E-mail Use Approved July 18, 2005 Revised April 27, 2010 Revised University information resources are strategic assets and as such must be managed as valuable state resources

  19. 29.01.03. M1.18 Information Resources Security Monitoring Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03. M1.18 Information Resources ­ Security Monitoring Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.18 Information Resources ­ Security Monitoring Approved July 18, 2005 Revised April 27, etc. Reason for SAP The purpose of the security monitoring policy is to ensure that information

  20. 29.01.03.M1.17 Information Resources Privacy Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    for university information resources. Reason The University has the right to examine information on information29.01.03.M1.17 Information Resources ­ Privacy Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.17 Information Resources ­ Privacy Approved July 18, 2005 Revised December 4, 2009 Revised August

  1. Search for 14.4 keV solar axions from M1 transition of Fe-57...

    Office of Scientific and Technical Information (OSTI)

    Search for 14.4 keV solar axions from M1 transition of Fe-57 with CUORE crystals Citation Details In-Document Search Title: Search for 14.4 keV solar axions from M1 transition of...

  2. 29.01.03.M1 Security of Electronic Information Resources Page 1 of 3 UNIVERSITY RULE

    E-Print Network [OSTI]

    Technology & Chief Information Officer. 2. RESPONSIBILITIES 2.1 The Associate Vice President for Information Technology & Chief Information Officer, or designee, is responsible for administering the provisions29.01.03.M1 Security of Electronic Information Resources Page 1 of 3 UNIVERSITY RULE 29.01.03.M1

  3. 29.01.03.M1.20 Information Resources Platform Management Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    , phones, and other information technology devices) are relied upon to deliver data in a secure, reliable29.01.03.M1.20 Information Resources ­ Platform Management Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.20 Information Resources ­ Platform Management Approved July 18, 2005 Revised February

  4. 15.01.01.M1 Treatment of Costs for Sponsored Agreements Page 1 of 2 UNIVERSITY RULE

    E-Print Network [OSTI]

    15.01.01.M1 Treatment of Costs for Sponsored Agreements Page 1 of 2 UNIVERSITY RULE 15.01.01.M1 Treatment of Costs for Sponsored Agreements Approved October 13, 1997 Revised June 6, 2001 Revised January by Texas A&M UniversityResearch Services (TAMU-RS). In compliance with Title 2 CFR Part 220, Cost

  5. CCMM 2000, Bayreuth, Germany September 19 1 Design and Synthesis of an FLC Conglomerate

    E-Print Network [OSTI]

    Walba, David

    CCMM 2000, Bayreuth, Germany · September 19 1 Design and Synthesis of an FLC Conglomerate Composed Research Center University of Colorado at Boulder #12;CCMM 2000, Bayreuth, Germany · September 19 2 Sm · Rel Polarity #12;CCMM 2000, Bayreuth, Germany · September 19 3 SmCSPF (Ferroelectric Conglomerate) Sm

  6. Landfills a thing of the past in Germany where advanced waste management By Evridiki Bersi -Kathimerini

    E-Print Network [OSTI]

    Columbia University

    that Germany saves 3.7 billion euros a year thanks to recycling and the production of energy from waste. Proper landfills will be out of operation because by then Germany plans to make use of all garbage and the energyLandfills a thing of the past in Germany where advanced waste management rules By Evridiki Bersi

  7. Sequestration of CO2 in the Altmark natural gas field, Germany: Mobility control to extend enhanced gas recovery

    E-Print Network [OSTI]

    Rebscher, D.; May, F.; Oldenburg, C.M.

    2006-01-01

    OF CO 2 IN THE ALTMARK NATURAL GAS FIELD, GERMANY: MOBILITYin the depleted Altmark natural gas reservoir, Germany. Ourdioxide or nitrogen in natural gas (methane) reservoirs,

  8. Multilingual Development in Germany in the Crossfire of Ideology and Politics: Monolingual and Multilingual Expectations, Polylingual Practices

    E-Print Network [OSTI]

    Pfaff, Carol W.

    2011-01-01

    in Germany, parallel to German schools in Turkey, butTurkey. Despite this reversal, the number of people with Turkish background in Germany

  9. Influence of post-deposition annealing on interfacial properties between GaN and ZrO{sub 2} grown by atomic layer deposition

    SciTech Connect (OSTI)

    Ye, Gang; Wang, Hong, E-mail: ewanghong@ntu.edu.sg; Arulkumaran, Subramaniam; Ng, Geok Ing; Li, Yang; Ang, Kian Siong [Novitas, Nanoelectronics Center of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Geok Ng, Serene Lay; Ji, Rong [Data Storage Institute, Agency for Science Technology and Research (A-STAR), 5 Engineering Drive 1, 117608 (Singapore); Liu, Zhi Hong [Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore)

    2014-10-13

    Influence of post-deposition annealing on interfacial properties related to the formation/annihilation of interfacial GaO{sub x} layer of ZrO{sub 2} grown by atomic layer deposition (ALD) on GaN is studied. ZrO{sub 2} films were annealed in N{sub 2} atmospheres in temperature range of 300?°C to 700?°C and analyzed by X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy. It has been found that Ga-O bond to Ga-N bond area ratio decreases in the samples annealed at temperatures lower than 500?°C, which could be attributed to the thinning of GaO{sub x} layer associated with low surface defect states due to “clean up” effect of ALD-ZrO{sub 2} on GaN. However, further increase in annealing temperature results in deterioration of interface quality, which is evidenced by increase in Ga-O bond to Ga-N bond area ratio and the reduction of Ga-N binding energy.

  10. Characterization of GaN nanowires grown on PSi, PZnO and PGaN on Si (111) substrates by thermal evaporation

    SciTech Connect (OSTI)

    Shekari, Leila; Hassan, Haslan Abu; Thahab, Sabah M.; Hassan, Zainuriah [Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Materials Engineering Department, College of Engineering, University of Kufa, Najaf (Iraq); Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

    2012-06-20

    In this research, we used an easy and inexpensive method to synthesize highly crystalline GaN nanowires (NWs); on different substrates such as porous silicon (PSi), porous zinc oxide (PZnO) and porous gallium nitride (PGaN) on Si (111) wafer by thermal evaporation using commercial GaN powder without any catalyst. Micro structural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of different substrates in the morphology, nucleation and alignment of the GaN nanowires. The degree of alignment of the synthesized nanowires does not depend on the lattice mismatch between wires and their substrates. Further structural and optical characterizations were performed using high resolution X-ray diffraction and energy-dispersive X-ray spectroscopy. Results indicate that the nanowires are of single-crystal hexagonal GaN. The quality and density of grown GaN nanowires for different substrates are highly dependent on the lattice mismatch between the nanowires and their substrates and also on the size of the porosity of the substrates. Nanowires grown on PGaN have the best quality and highest density as compared to nanowires on other substrates. By using three kinds of porous substrates, we are able to study the increase in the alignment and density of the nanowires.

  11. Low resistance ohmic contacts on wide band-gap GaN M. E. Lin, Z. Ma, F. Y. Huang, Z. F. Fan, L. H. Allen, and H. MorkoG

    E-Print Network [OSTI]

    Allen, Leslie H.

    -beam evaporation onto the GaN substrate, and then thermally annealed in a temperature range from 500 to 900 "C as high temperature/high power electrical devices, there still remains much more work to be done on GaN epilayers, Foresi et aL6 used Al and Au contacts with 575 "C anneal cycle. However, the specific

  12. Modeling of electronic transport in GaN n-i-p junctions Laboratoire de Physique du Solide, Facults Universitaires Notre-Dame de la Paix, Rue de Bruxelles 61,

    E-Print Network [OSTI]

    Mayer, Alexandre

    Modeling of electronic transport in GaN n-i-p junctions A. Mayera) Laboratoire de Physique du) We propose a model and an algorithm for computing the transport properties of GaN n-i-p devices as cold cathodes2,3 or thermoelectric coolers.4­8 For applications as electronic emitters, the idea

  13. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzén, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}–0.24?eV), D3 (E{sub C}–0.60?eV), D4 (E{sub C}–0.69?eV), D5 (E{sub C}–0.96?eV), D7 (E{sub C}–1.19?eV), and D8, were observed. After 2?MeV electron irradiation at a fluence of 1?×?10{sup 14?}cm{sup ?2}, three deep electron traps, labeled D1 (E{sub C}–0.12?eV), D5I (E{sub C}–0.89?eV), and D6 (E{sub C}–1.14?eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  14. The development and evaluation of a sensitive minicolumn assay for the detection of aflatoxin M1 in milk 

    E-Print Network [OSTI]

    Cathey, Carol Grmela

    1993-01-01

    The aflatoxins comprise a subgroup of mycotoxins usually produced by Aspergillus parasiticus or Aspergillus flavus. Dairy cattle which ingest aflatoxin-contaminated feed will excrete aflatoxin M1 into the milk. The presence of this metabolite...

  15. Search for 14.4 keV solar axions from M1 transition of Fe-57 with CUORE crystals

    E-Print Network [OSTI]

    Alessandria, F.

    2014-01-01

    to JCAP Search for 14.4 keV solar axions from M1 transitionfor useful discussion about solar core 57 Fe content.excitation of 57 Fe in the solar core. The isotope 57 Fe is

  16. Performance enhancement of GaN metal–semiconductor–metal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

    SciTech Connect (OSTI)

    Kumar, Manoj E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, Burak; Okyay, Ali Kemal E-mail: aokyay@ee.bilkent.edu.tr

    2015-03-15

    The authors demonstrate improved device performance of GaN metal–semiconductor–metal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360?nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

  17. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    SciTech Connect (OSTI)

    Yu, K. M.; Novikov, S. V.; Broesler, R.; Demchenko, I. N.; Denlinger, J. D.; Liliental-Weber, Z.; Luckert, F.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2009-08-29

    Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN1-xAsx, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17GaN to ~;;0.8 eV at x~;;0.85. The reduction in the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x>0.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offer an opportunity of using GaN1-xAsx alloys for various types of solar power conversion devices.

  18. Denazification in the American Zone of Germany, 1945-1948 

    E-Print Network [OSTI]

    McHenry, Richard Lee

    1982-01-01

    , op. cit. , 960. 34 23. 6 9, ~B*t 1, 9. ' t. , 199. 24. Ladislas Farago, The Last Da s of Patton (New York, 1981), 73-75. 25. Ibid. , 75-77. 26. Ibid . , 143-144. 27. Alfred D. Chandler and Louis Galambos (eds. ) The Pa ers of Dwi ht David...DENAEIFICATION IN THE AMERICAN 'ZONE OF GERMANY; 1945-1948 A Thesis RICHARD LEE MCHENRY, JR, Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER OF ARTS December 1982...

  19. EUDEEP (Smart Grid Project) (Germany) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to: navigation, search Name: ETEC GmbH Place:Germany) Jump to:

  20. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  1. Formation of manganese -doped atomic layer in wurtzite GaN Meng Shi, Abhijit Chinchore, Kangkang Wang, Andrada-Oana Mandru, Yinghao Liu et al.

    E-Print Network [OSTI]

    is formulated based on the experimental data, and implications for possible spintronic applications The importance of spintronics in general was emphati- cally described by Wolf et al.,1 while the possibility to fabri- cate room-temperature spintronic devices based on GaN was proposed by Dietl et al.2 The idea

  2. Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and high-resolution transmission electron microscopy

    E-Print Network [OSTI]

    Rohrer, Gregory S.

    -resolution transmission electron microscopy W. Qian, G. S. Rohrer, and M. Skowronski Department of Materials Science. K. Gaskill Laboratory for Advanced Material Synthesis, Naval Research Laboratory, Washington, DC of organometallic vapor phase epitaxy grown -GaN films using high-resolution transmission electron microscopy

  3. High linearity GaN HEMT power amplifier with pre-linearization gate diode Shouxuan Xie, Vamsi Paidi, Sten Heikman, Alessandro Chini,

    E-Print Network [OSTI]

    Long, Stephen I.

    GaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added. Introduction. Our previously described single-ended Class B power amplifier design using GaN HEMT technology is biased at exactly the pinch off point (Class B configuration) [1]. In order to further improve

  4. 29.01.04.M1.01 Web Accessibility and Usability Procedures Page 1 of 5 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    Bermúdez, José Luis

    29.01.04.M1.01 Web Accessibility and Usability Procedures Page 1 of 5 STANDARD ADMINISTRATIVE or redesigned Web pages/content is that they are designed and created to be accessible to, and usable by, all and maintain Texas A&M University Web pages, deans, and division heads. Definitions 508 validation tool

  5. 29.01.03.M1.12 Information Resources Network Access Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    by University Information Technology services, and which backhaul data from a location to a central site thus Technology Risk Management #12;29.01.03.M1.12 Information Resources ­ Network Access Page 3 of 3 OFFICE OF RESPONSIBILITY: Associate Vice President for Information Technology & Chief Information Officer #12;

  6. GG 711 FALL 2015 M 1:30-4:20 pm, POST 702 "Cosmogenic Nuclides in Earth and Planetary Science"

    E-Print Network [OSTI]

    1 GG 711 FALL 2015 M 1:30-4:20 pm, POST 702 "Cosmogenic Nuclides in Earth and Planetary Science a foundational understanding of the principles of cosmogenic nuclide research. ***have developed an ability to make sound assessments of applications of the presented cosmogenic nuclide measurement modalities

  7. East Germany struggles to clean its air and water

    SciTech Connect (OSTI)

    Cherfas, J.

    1990-04-20

    East Germans are working hard on a strategy to improve their polluted environment. Industrial plants are largely responsible for this pollution. A shroud of haze veils the suburbs of East Berlin. Far to the south the giant power plants around Leipzig pour more dust and sulfur dioxide into the air than in any other country in Europe. More than 90% of the country's electricity comes from brown coal, accompanied by prodigious quantities of dust and sulfur dioxide: almost 6 million tones of sulfur dioxide and more than 2 million tones of dust in 1988. East Germany enjoys some of the cheapest energy in the world, and the world's third highest energy consumption per capita, behind the United States, and Canada. Naturally, is also suffers air quality and health problems. The country is trying to cut down on consumption and clean up on generation. Actually, water quality is the number one priority, which unlike air is in very short supply.

  8. Large Scale Wind and Solar Integration in Germany

    SciTech Connect (OSTI)

    Ernst, Bernhard; Schreirer, Uwe; Berster, Frank; Pease, John; Scholz, Cristian; Erbring, Hans-Peter; Schlunke, Stephan; Makarov, Yuri V.

    2010-02-28

    This report provides key information concerning the German experience with integrating of 25 gigawatts of wind and 7 gigawatts of solar power capacity and mitigating its impacts on the electric power system. The report has been prepared based on information provided by the Amprion GmbH and 50Hertz Transmission GmbH managers and engineers to the Bonneville Power Administration (BPA) and Pacific Northwest National Laboratory representatives during their visit to Germany in October 2009. The trip and this report have been sponsored by the BPA Technology Innovation office. Learning from the German experience could help the Bonneville Power Administration engineers to compare and evaluate potential new solutions for managing higher penetrations of wind energy resources in their control area. A broader dissemination of this experience will benefit wind and solar resource integration efforts in the United States.

  9. Why Are Residential PV Prices in Germany So Much Lower Than in the United States?

    E-Print Network [OSTI]

    .S. installers, to collect data on residential PV soft costs ­ Comprehensively reviewed public and private consultant data relevant to the cost structure of residential PV in Germany · Focus is the preWhy Are Residential PV Prices in Germany So Much Lower Than in the United States? A Scoping

  10. MODELLING GROUNDWATER FLOW ON THE REGIONAL SCALE IN THE UPPER DANUBE CATCHMENT (GERMANY)

    E-Print Network [OSTI]

    Cirpka, Olaf Arie

    MODELLING GROUNDWATER FLOW ON THE REGIONAL SCALE IN THE UPPER DANUBE CATCHMENT (GERMANY) Roland.barthel@iws.uni-stuttgart.de Abstract. A groundwater flow model for the Upper Danube catchment (A=77,000km2 at gauge Passau, Germany coupled models. Modelling of groundwater flow, using coupled deterministic and hydrological approaches

  11. CNG buses fire safety: learnings from recent accidents in France and Germany

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    CNG buses fire safety: learnings from recent accidents in France and Germany Lionel PERRETTE Saarland Holding, Sulzbach Saar/ Germany ABSTRACT The use of CNG in bus and private vehicles is growing steadily. Recent fire accidents involving CNG buses have shown that tanks may explode though compliant

  12. The 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 15, 2011

    E-Print Network [OSTI]

    International Electric Propulsion Conference, Wiesbaden, Germany September 11 ­ 15, 2011 2 magnetic fieldThe 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 ­ 15, 2011 1 Effect of Magnetic Shielding on Plasma Plume of the Cylindrical Hall Thrusters IEPC-2011-175 Presented

  13. The 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 15, 2011

    E-Print Network [OSTI]

    The 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 ­ 15, 2011 1 Electric Propulsion Conference, Wiesbaden · Germany September 11 ­ 15, 2011 K. Matyash1 , Max and possibly to the spoke phenomenon. Nomenclature B = magnetic field e = electron charge E = electric field m

  14. The 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 15, 2011

    E-Print Network [OSTI]

    The 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 ­ 15, 2011 1-247 Presented at the 32nd International Electric Propulsion Conference, Wiesbaden · Germany September 11 ­ 15 energy ions flowing at large angles with respect to the thruster centerline. It was suggested

  15. Copyright WILEYVCH Verlag GmbH & Co. KGaA, 69469 Weinheim, Germany, 2014. Supporting Information

    E-Print Network [OSTI]

    Wang, Zhong L.

    Copyright WILEYVCH Verlag GmbH & Co. KGaA, 69469 Weinheim, Germany, 2014. Supporting Information for Harvesting Energy from a Moving Object or Human Motion in Contact and Non-Contact Modes Sihong Wang, YannanH & Co. KGaA, 69469 Weinheim, Germany, 2013. Supporting Information for Adv. Mater., DOI: 10.1002/adma

  16. Proposals in for Czech firms; cooperation likely with eastern Germany

    SciTech Connect (OSTI)

    Alperowicz, N.

    1993-02-10

    Two Western groups - Shell and a consortium made up of Agip, Conoco, and Total - have offered to buy the refining operations of Chemopetrol Litvinov and Kaucuk Kralupy, both in the Czech republic. Meanwhile, Amoco, Neste, and PCD are looking at the possibility of acquiring some of the plastics plants at Litvinov. Amoco is interested in the polypropylene operations, Neste in polyethylene, and PCD in both. The two Czech firms are included in the second wave of privatization, which will begin in midyear. So far, there have been no offers for the 80,000-m.t./year polystyrene and 60,000-m.t./year styrene butadiene rubber operations belonging to Kralupy, although Atochem representatives recently visited the plants. Litvinov is carrying out revamping operations at its core unit, a 12-year-old, 450,000-m.t./year ethylene plant. The plant, currently running at 400,000 m.t./year, supplies downstream plants, Neratovice, and sells on the export markets. An existing ethylene pipeline between Litvinov and Bohlen in eastern Germany, which used to supply an average 100,000 m.t./year of ethylene to Bohen in exchange for naphtha, is virtually unused. One proposal involves reactivating this exchange to secure ethylene feedstock for plants in eastern Germany. According to some sources, a preliminary decision has been made to shut down the 100,000-m.t./year ethylene plant at Leuna and possibly to expand the Bohlen cracker by 100,000 m.t./year, to 400,000 m.t./year by the late 1990s.

  17. Vehicle Technologies Office Merit Review 2015: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about advanced low-cost SiC and GaN wide...

  18. Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

  19. Novel ethylenediamine-gallium phosphate containing 6-fold coordinated gallium atoms with unusual four equatorial Ga–N bonds

    SciTech Connect (OSTI)

    Torre-Fernández, Laura [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); Espina, Aránzazu; Khainakov, Sergei A.; Amghouz, Zakariae [Servicios Científico Técnicos, Universidad de Oviedo, 33006 Oviedo (Spain); García, José R. [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain); García-Granda, Santiago, E-mail: sgg@uniovi.es [Departamentos de Química Física y Analítica y Química Orgánica e Inorgánica, Universidad de Oviedo-CINN, 33006 Oviedo (Spain)

    2014-07-01

    A novel ethylenediamine-gallium phosphate, formulated as Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, was synthesized under hydrothermal conditions. The crystal structure, including hydrogen positions, was determined using single-crystal X-ray diffraction data (monoclinic, a=9.4886(3) Å, b=6.0374(2) Å, c=10.2874(3) Å, and ?=104.226(3)°, space group Pc) and the bulk was characterized by chemical (Ga–P–C–H–N) and thermal analysis (TG–MS and DSC), including activation energy data of its thermo-oxidative degradation, powder X-ray diffraction (PXRD), solid-state nuclear magnetic resonance (SS-NMR) measurements, and transmission electron microscopy (TEM, SAED/NBD, and STEM BF-EDX). The crystal structure is built up of infinite zig-zag chains running along the c-axis, formed by vertex-shared (PO{sub 4}) and (GaO{sub 2}N{sub 4}) polyhedra. The new compound is characterized by unusual four equatorial Ga–N bonds coming from two nonequivalent ethylenediamine molecules and exhibits strong blue emission at 430 nm (?{sub ex}=350 nm) in the solid state at room temperature. - Graphical abstract: Single crystals of a new ethylenediamine-gallium phosphate, Ga(H{sub 2}NCH{sub 2}CH{sub 2}NH{sub 2}){sub 2}PO{sub 4}·2H{sub 2}O, were obtained and the structural features presented. This structure is one of the scarce examples of GaPO with Ga–N bonds reported. - Highlights: • A novel ethylenediamine-gallium phosphate was hydrothermally synthesized. • The new compound is characterized by unusual four equatorial Ga–N bonds. • Void-volume analysis shows cages and channels with sizes ideally suited to accommodate small molecules. • The new compound exhibits strong blue emission.

  20. spe438-20 page 1 Garrison, N.J., Busby, C.J., Gans, P.B., Putirka, K., and Wagner, D.L., 2008, A mantle plume beneath California? The mid-Miocene Lovejoy flood basalt, northern

    E-Print Network [OSTI]

    Busby, Cathy

    spe438-20 page 1 1 Garrison, N.J., Busby, C.J., Gans, P.B., Putirka, K., and Wagner, D.L., 2008-Miocene Lovejoy flood basalt, northern California Noah J. Garrison Cathy J. Busby Phillip B. Gans Department basalt. #12;2 Garrison et al. spe438-20 page 2 INTRODUCTION Mid-Miocene volcanism in the northern Sierra

  1. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  2. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

    SciTech Connect (OSTI)

    Shelton, Christopher T.; Sachet, Edward; Paisley, Elizabeth A.; Hoffmann, Marc P.; Rajan, Joseph; Collazo, Ramón; Sitar, Zlatko; Maria, Jon-Paul

    2014-01-28

    We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c? polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.

  3. Mg doping of GaN grown by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions

    SciTech Connect (OSTI)

    Zhang Meng; Bhattacharya, Pallab; Guo Wei; Banerjee, Animesh [Department of Electrical Engineering and Computer Science, Solid-State Electronics Laboratory, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2010-03-29

    Acceptor doping of GaN with Mg during plasma-assisted molecular beam epitaxy, under N-rich conditions and a relatively high growth temperature of 740 deg. C, was investigated. The p-doping level steadily increases with increasing Mg flux. The highest doping level achieved, determined from Hall measurements, is 2.1x10{sup 18} cm{sup -3}. The corresponding doping efficiency and hole mobility are approx4.9% and 3.7 cm{sup 2}/V s at room temperature. Cross-sectional transmission electron microscopy and photoluminescence measurements confirm good crystalline and optical quality of the Mg-doped layers. An InGaN/GaN quantum dot light emitting diode (lambda{sub peak}=529 nm) with p-GaN contact layers grown under N-rich condition exhibits a low series resistance of 9.8 OMEGA.

  4. The $E1$ & $M1$ Spontaneous Decay Rates for an Emitter Inside a Cavity Within a Medium

    E-Print Network [OSTI]

    Singh, Jaideep

    2015-01-01

    We discuss the $E1$ and $M1$ spontaneous decay rates of the an emitter residing inside of a real cavity carved out of a vast, uniform, homogenous, isotropic, linear, lossless, dispersionless, and continuous medium. The ratio of the medium rate to vacuum rate is given by $\\Gamma_m/\\Gamma_0 = [G(u)]^2 n^3 / u$, where $G(u) = 3u/(2u+1)$ is the local field correction factor, $n = \\sqrt{\\epsilon\\mu/(\\epsilon_0\\mu_0)}$ is the index of refraction of the medium, $\\epsilon(\\epsilon_0)$ is the electric permitivity of the medium (vacuum), $\\mu(\\mu_0)$ is the magnetic permeability of the medium (vacuum), and $u = \\epsilon/\\epsilon_0$ for $E1$ transitions or $u = \\mu_0/\\mu$ for $M1$ transitions.

  5. A complex investigation of building sandstones from Saxony (Germany)

    SciTech Connect (OSTI)

    Goetze, Jens Siedel, Heiner

    2007-11-15

    The present paper provides a methodology for the investigation and characterization of building sandstones. This analytical scheme was designed for distinguishing mature arenites, which in general show very similar properties and are difficult to distinguish. This is shown for Cretaceous sandstones from various occurrences in Saxony (Germany), which have been used for centuries as building materials. The procedure is mainly based on the combination of macroscopic rock description, thin section polarizing microscopy (phase composition, texture, grain-size distribution) and cathodoluminescence (CL) microscopy (quartz types, feldspar and kaolinite content) coupled with image analysis, scanning electron microscopy (accessories, pore cement, diagenetic grain surface features), and analysis of pore space data. Sometimes, additional data from X-ray diffraction or chemical analyses (major and trace elements) can be used. Especially in the case of quartz rich arenites, CL is a powerful tool for provenance analysis. The detailed analysis of sandstone material in most cases allows us to assign historically used building material to a specific sandstone occurrence. These results are important for both interpreting the weathering behaviour of the building material and the conservation, reconstruction and stone replacement of historical monuments.

  6. Structural properties of free-standing 50 mm diameter GaN waferswith (101_0) orientation grown on LiAlO2

    SciTech Connect (OSTI)

    Jasinski, Jacek; Liliental-Weber, Zuzanna; Maruska, Herbert-Paul; Chai, Bruce H.; Hill, David W.; Chou, Mitch M.C.; Gallagher, John J.; Brown, Stephen

    2005-09-27

    (10{und 1}0) GaN wafers grown on (100) face of {gamma}-LiAlO{sub 2} were studied using transmission electron microscopy. Despite good lattice matching in this heteroepitaxial system, high densities of planar structural defects in the form of stacking faults on the basal plane and networks of boundaries located on prism planes inclined to the layer/substrate interface were present in these GaN layers. In addition, significant numbers of threading dislocations were observed. High-resolution electron microscopy indicates that stacking faults present on the basal plane in these layers are of low-energy intrinsic I1type. This is consistent with diffraction contrast experiments.

  7. Temperature dependent dielectric function and the E{sub 0} critical points of hexagonal GaN from 30 to 690 K

    SciTech Connect (OSTI)

    Kim, Tae Jung Hwang, Soon Yong; Byun, Jun Seok; Barange, Nilesh S.; Park, Han Gyeol; Dong Kim, Young

    2014-02-15

    The complex dielectric function ? and the E{sub 0} excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 ?m thick GaN film deposited on a c-plane (0001) sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ???. At low temperature sharp E{sub 0} excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.

  8. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the “M”-shape dependence of the (112{sup ¯}0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  9. Photo-induced water oxidation at the aqueous GaN (101?0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z. [Brookhaven National Lab. (BNL), Upton, NY (United States); Yale Univ., New Haven, CT (United States); Kharche, Neerav [Brookhaven National Lab. (BNL), Upton, NY (United States); Batista, Victor S. [Yale Univ., New Haven, CT (United States); Hybertsen, Mark S. [Brookhaven National Lab. (BNL), Upton, NY (United States); Tully, John C. [Yale Univ., New Haven, CT (United States); Muckerman, James T. [Brookhaven National Lab. (BNL), Upton, NY (United States)

    2015-04-03

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101?0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation of free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101?0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.

  10. Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

    SciTech Connect (OSTI)

    Rawal, Dipendra Singh, E-mail: dsrawal15@gmail.com; Arora, Henika; Sehgal, Bhupender Kumar; Muralidharan, Rangarajan [Solid State Physics Laboratory, Lucknow Road, Timarpur, Delhi-110054 (India)

    2014-05-15

    GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2??m/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

  11. Kinaesthetic impulses : aesthetic experience, bodily knowledge, and pedagogical practices in Germany, 1871-1918

    E-Print Network [OSTI]

    Çelik, Zeynep, Ph. D. Massachusetts Institute of Technology

    2007-01-01

    This dissertation studies a moment of transition in German aesthetics in the late nineteenth century. Starting in the 1870s, groups of artists, architects, historians, critics, connoisseurs, and museum officials in Germany ...

  12. "Down in Turkey, far away": human rights, the Armenian Massacres, and Orientalism in Wilhelmine Germany

    E-Print Network [OSTI]

    Anderson, ML

    2007-01-01

    Terms and Conditions “Down in Turkey, far away” “fanatic andIsaiah Friedman, Germany, Turkey, and Zionism, 1897–1918 (Terms and Conditions “Down in Turkey, far away” living near

  13. Why Are Resiential PV Prices in Germany So Much Lower Than in the United States?

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy (DOE) SunShot Initiative, in conjunction with the Lawrence Berkeley National Laboratory (LBNL) discusses the installed price of residential PV being significantly lower in Germany than in the United States.

  14. Why Study German? Germany lies in the heart of Europe where more

    E-Print Network [OSTI]

    Saldin, Dilano

    of Poland, the Czech Republic, Russia and Romania. German is the third most studied foreign language? As a nation, Germany has one of the top ten world economies and is the home of the European Bank. It exports

  15. Tactics of diabetes control: Turkish immigrant experiences with chronic illness in Berlin, Germany

    E-Print Network [OSTI]

    Guell, Cornelia

    2009-01-01

    This thesis explores Turkish migrants’ practices of diabetes care in Germany. Health statistics frequently identify minority groups as vulnerable to chronic illness and Turkish-origin Germans are said to be more likely ...

  16. Disparities in nuclear power plant performance in the United States and the Federal Republic of Germany

    E-Print Network [OSTI]

    Hansen, Kent F.

    1984-01-01

    This report presents data comparing the performance of light water reactors in the United States and the Federal Republic of Germany (FRG). The comparisons are made for the years 1980-1983 and include 21 Westinghouse ...

  17. Pedro M. Castro Iiro Harjunkoski Ignacio E. Grossmann Lisbon, Portugal Ladenburg, Germany Pittsburgh, USA

    E-Print Network [OSTI]

    Grossmann, Ignacio E.

    utilities, electrical power Availability Price Challenging aspect of plant scheduling Current practice Location of event points unknown a priori Electricity pricing & availability Product due dates LocationPedro M. Castro Iiro Harjunkoski Ignacio E. Grossmann Lisbon, Portugal Ladenburg, Germany

  18. Energy-Optimised Building- Experience and Future Perspectives from a Demonstration Programme in Germany 

    E-Print Network [OSTI]

    Hans, O.; Voss, K.; Wagner, A.; Gossner, H.; Grunewald, J.; Petzold, H.; Herkel, S.; Pfafferott, J.; Lehmann, D.; Neumann, C.

    2008-01-01

    energy savings of 50% and more compared to current practice in Germany, without exceeding conventional investment costs. A number of these projects have been awarded architectural prizes. This paper summarises key findings and explains the strategies...

  19. 29.01.03.M1.26 Information Resources Security Risks Assessment Reviews Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.26 Information Resources ­ Security Risks Assessment Reviews Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.26 Information Resources ­ Information Security Risk Assessment Reviews with assurance that the information on which risk assessment assertions are made is correct. The goal

  20. 29.01.03.M1.04 Information Resources System Administrator and Special Access Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.04 Information Resources ­ System Administrator and Special Access Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.04 Information Resources ­ System Administrator and Special Access Approved and skills. Descriptive Data (e.g., logs) - information created by a computer system or other information

  1. 29.01.03.M1.24 Information Resources Notification of Unauthorized Access, Use or Disclosure of Sensitive Personal Information Page 1 of 3

    E-Print Network [OSTI]

    29.01.03.M1.24 Information Resources ­ Notification of Unauthorized Access, Use or Disclosure of Sensitive Personal Information Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.24 Information Resources ­ Notification of Unauthorized Access, Use, or Disclosure of Sensitive Personal Information

  2. 29.01.03.M1.14 Information Resources Password-based Authentication Page 1 of 7 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    Behmer, Spencer T.

    29.01.03.M1.14 Information Resources ­ Password-based Authentication Page 1 of 7 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.14 Information Resources ­ Password-based Authentication Approved July 18 authentication is a means to control who has access to an information resource system. Controlling the access

  3. 29.01.03.M1.21 Information Resources -System Development and Acquisition Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.21 Information Resources - System Development and Acquisition Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.21 Information Resources ­ System Development and Acquisition Approved July Confidential Information - Information that must be protected from unauthorized disclosure or public release

  4. 29.01.03.M1.16 Information Resources-Portable Devices: Information Security Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    29.01.03.M1.16 Information Resources- Portable Devices: Information Security Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE 29.01.03.M1.16 Information Resources ­ Portable Devices: Information Security Approved on the responsibilities of information resource owners to adequately protect data residing on portable devices

  5. Ejercicios de Teoria de Numeros para las Navidades 2009 Problema 1. a) (facil) Demostrar que log m.c.m.{1, . . . , n} n.

    E-Print Network [OSTI]

    Cilleruelo, Javier

    Ejercicios de Teor´ia de N´umeros para las Navidades 2009 Problema 1. a) (f´acil) Demostrar que log m.c.m.{1, . . . , n} n. b) (dif´icil) Hallar el comportamiento asint´otico de log m.c.m.{1, 6

  6. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN

    SciTech Connect (OSTI)

    Suntrup, Donald J.; Gupta, Geetak; Li, Haoran; Keller, Stacia; Mishra, Umesh K.

    2014-12-29

    We present a method for measuring the mean free path and extracting the momentum relaxation time of hot electrons in GaN using the hot electron transistor (HET). In this device, electrons are injected over a high energy emitter barrier into the base where they experience quasi-ballistic transport well above the conduction band edge. After traversing the base, high energy electrons either surmount the base-collector barrier and become collector current or reflect off the barrier and become base current. We fabricate HETs with various base thicknesses and measure the common emitter transfer ratio (?) for each device. The mean free path is extracted by fitting ? to a decaying exponential as a function of base width and the relaxation time is computed using a suitable injection velocity. For devices with an injection energy of ?1?eV, we measure a hot electron mean free path of 14?nm and calculate a momentum relaxation time of 16 fs. These values are in agreement with theoretical calculations where longitudinal optical phonon scattering is the dominant momentum relaxation mechanism.

  7. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  8. Institute of Functional Genomics, University of Regensburg, Regensburg, Germany. Present address: Center for Systems Biology, Harvard Medical School, Boston, MA.

    E-Print Network [OSTI]

    Rosenberg, Noah

    1 Institute of Functional Genomics, University of Regensburg, Regensburg, Germany. 2 Present, Food and Environment, The Hebrew University of Jeru- salem, Rehovot, Israel. 7 Department of Genetics

  9. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    SciTech Connect (OSTI)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, José H. D. da; Leite, Douglas M. G.; Bortoleto, José R. R.

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 °C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 °C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 °C, 30 W and 600 °C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  10. Photo-induced water oxidation at the aqueous GaN (101¯0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101¯0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation ofmore »free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101¯0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.« less

  11. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  12. Evaluation of growth methods for the heteroepitaxy of non-polar (11-20) GaN on sapphire by MOVPE

    E-Print Network [OSTI]

    Oehler, F.; Sutherland, D.; Zhu, T.; Emery, R.; Badcock, T. J.; Kappers, M. J.; Humphreys, C. J.; Dawson, P.; Oliver, R. A.

    2014-09-16

    interlayer. Keywords: A3 Metalorganic vapor phase epitaxy, B1 Nitrides, A1 Defects, A1 Characterization 1. Introduction Hexagonal gallium nitride (GaN) presents two stable growth directions inclined at 90? angle to the c-direction. Respectively named a... is kept constant at 20 standard litres per minute (SLM) by bal- ancing the flow rates of the carrier gas and NH3. Unless otherwise specified, the total reactor pressure is 100 Torr and H2 is used as the carrier gas. The growth temperatures quoted...

  13. Better Catalysts through Microscopy: Nanometer Scale M1/M2 Intergrown Heterostructure in Mo-V-M Complex Oxides

    SciTech Connect (OSTI)

    He, Qian [ORNL; Woo, Jungwon [University of Cincinnati; Belianinov, Alex [ORNL; Guliants, Vadim V. [University of Cincinnati; Borisevich, Albina Y [ORNL

    2015-01-01

    In recent decades, catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. In this paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixture of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.

  14. Mathematical Model for the Optimal Utilization Percentile in M/M/1 Systems: A Contribution about Knees in Performance Curves

    E-Print Network [OSTI]

    Gonzalez-Horta, Francisco A; Ramirez-Cortes, Juan M; Martinez-Carballido, Jorge; Buenfil-Alpuche, Eldamira

    2011-01-01

    Performance curves of queueing systems can be analyzed by separating them into three regions: the flat region, the knee region, and the exponential region. Practical considerations, usually locate the knee region between 70-90% of the theoretical maximum utilization. However, there is not a clear agreement about where the boundaries between regions are, and where exactly the utilization knee is located. An open debate about knees in performance curves was undertaken at least 20 years ago. This historical debate is mainly divided between those who claim that a knee in the curve is not a well defined term in mathematics, or it is a subjective and not really meaningful concept, and those who define knees mathematically and consider their relevance and application. In this paper, we present a mathematical model and analysis for identifying the three mentioned regions on performance curves for M/M/1 systems; specifically, we found the knees, or optimal utilization percentiles, at the vertices of the hyperbolas tha...

  15. Brine migration test for Asse Mine, Federal Republic of Germany: final test plan

    SciTech Connect (OSTI)

    Not Available

    1983-07-01

    The United States and the Federal Republic of Germany (FRG) will conduct a brine migration test in the Asse Salt Mine in the FRG as part of the US/FRG Cooperative Radioactive Waste Management Agreement. Two sets of two tests each will be conducted to study both liquid inclusion migration and vapor migration in the two salt types chosen for the experiments: (1) pure salt, for its characteristics similar to the salt that might occur in potential US repositories, and (2) transitional salt, for its similarity to the salt that might occur in potential repositories in Germany.

  16. Comparing Germany's and California's Interconnection Processes for PV Systems (White Paper)

    SciTech Connect (OSTI)

    Tweedie, A.; Doris, E.

    2011-07-01

    Establishing interconnection to the grid is a recognized barrier to the deployment of distributed energy generation. This report compares interconnection processes for photovoltaic projects in California and Germany. This report summarizes the steps of the interconnection process for developers and utilities, the average length of time utilities take to process applications, and paperwork required of project developers. Based on a review of the available literature, this report finds that while the interconnection procedures and timelines are similar in California and Germany, differences in the legal and regulatory frameworks are substantial.

  17. 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 THE BURIED EMITTER SOLAR CELL CONCEPT

    E-Print Network [OSTI]

    24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 1 THE BURIED­efficient #12;24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 2 industrial EMITTER SOLAR CELL CONCEPT: INTERDIGITATED BACK-JUNCTION STRUCUTRE WITH VIRTUALLY 100% EMITTER COVERAGE

  18. 17th European Biomass Conference and Exhibition 2009, Hamburg, Germany Lignocellulosic Ethanol: The Path to Market

    E-Print Network [OSTI]

    17th European Biomass Conference and Exhibition 2009, Hamburg, Germany Lignocellulosic Ethanol of transport fuels from biomass is essential if the EU aspiration to substitute 10% of transport fuels investment in R&D in the US, Europe and Asia. The production of ethanol from lignocellulosic biomass

  19. Second International Symposium on Marine Propulsors smp'11, Hamburg, Germany, June 2011

    E-Print Network [OSTI]

    Mahesh, Krishnan

    Second International Symposium on Marine Propulsors smp'11, Hamburg, Germany, June 2011 Large Eddy Simulation of the Effect of Hull on Marine Propulsors in Crashback Aman Verma, Hyunchul Jang, Krishnan Mahesh Aerospace Engineering and Mechanics, University of Minnesota, Minneapolis, USA ABSTRACT Presence of the hull

  20. Proceedings of Workshop on Uranium Production Environmental Restoration: An exchange between the United States and Germany

    SciTech Connect (OSTI)

    Not Available

    1993-12-31

    Scientists, engineers, elected officials, and industry regulators from the United, States and Germany met in Albuquerque, New Mexico, August 16--20, 1993, in the first joint international workshop to discuss uranium tailings remediation. Entitled ``Workshop on Uranium Production Environmental Restoration: An Exchange between the US and Germany,`` the meeting was hosted by the US Department of Energy`s (DOE) Uranium Mill Tailings Remedial Action (UMTRA) Project. The goal of the workshop was to further understanding and communication on the uranium tailings cleanup projects in the US and Germany. Many communities around the world are faced with an environmental legacy -- enormous quantities of hazardous and low-level radioactive materials from the production of uranium used for energy and nuclear weapons. In 1978, the US Congress passed the Uranium Mill Tailings Radiation Control Act. Title I of the law established a program to assess the tailings at inactive uranium processing sites and provide a means for joint federal and state funding of the cleanup efforts at sites where all or substantially all of the uranium was produced for sale to a federal agency. The UMTRA Project is responsible for the cleanup of 24 sites in 10 states. Germany is facing nearly identical uranium cleanup problems and has established a cleanup project. At the workshop, participants had an opportunity to interact with a broad cross section of the environmental restoration and waste disposal community, discuss common concerns and problems, and develop a broader understanding of the issues. Abstracts are catalogued individually for the data base.

  1. Talking to the Enemy: Germany's Capture of British Voices in the Great War

    E-Print Network [OSTI]

    Talking to the Enemy: Germany's Capture of British Voices in the Great War Catherine Robson Between 1915 and 1918, members of a Royal Prussian Phonogramm Commission visited 70 prisoner-of- war camps of this remarkable episode in the Great War; it explores the project's informing contexts and operational details

  2. Signature of Rhine Valley sturzstrom dam failures in Holocene sediments of Lake Constance, Germany

    E-Print Network [OSTI]

    Gilli, Adrian

    Signature of Rhine Valley sturzstrom dam failures in Holocene sediments of Lake Constance, Germany 4 November 2003; received in revised form 12 April 2004; accepted 26 April 2004 Abstract Landslide-dammed that the hyperpycnite deposits are directly related to the failure of two sturzstrom dams and the draining of the dammed

  3. Operational costs induced by fluctuating wind power production in Germany and Scandinavia

    E-Print Network [OSTI]

    of fossil fuel resources especially oil and natural gas, alternatives to electricity production basedOperational costs induced by fluctuating wind power production in Germany and Scandinavia Peter to the variability and unpredictability of wind power production. For large amounts of wind power production

  4. Performance-based Specifications in Public Procurement: Exploring the Case of Germany

    E-Print Network [OSTI]

    Vellekoop, Michel

    Performance-based Specifications in Public Procurement: Exploring the Case of Germany Author rising requirements on the sector such as sustainability and innovation aspects impose challenges valuable solutions is the employment of performance-based specifications (PBS) in the procurement process

  5. 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 VIREEFFECT: VIARESISTANCE INDUCED RECOMBINATION ENHANCEMENT

    E-Print Network [OSTI]

    DEVELOPMENT The strategies for efficiency improvement of EWT solar cells are comparable to those of any other­RESISTANCE INDUCED RECOMBINATION ENHANCEMENT ­ THE ORIGIN OF REDUCED FILL FACTORS OF EMITTER WRAP THROUGH SOLAR CELLS-Wolfen, Germany. ABSTRACT: Emitter wrap through solar cells (EWT) are known for exhibiting low fill factors (FF

  6. FOCUS GROUP on PHOTONICS Universitatsstr. 27/PRG, D-58084 Hagen, Germany

    E-Print Network [OSTI]

    Jahns, Jürgen

    FOCUS GROUP on PHOTONICS Universit¨atsstr. 27/PRG, D-58084 Hagen, Germany Fundamentals and Theory of Electromagnetics (Allgemeine und Theoretische Elektrotechnik) Prof. Dr.-Ing. Reinhold Pregla - Reinhold Christian Bonerz Richard Heming Udo Vieth Prof. Dr.-Ing. Wilfrid Pascher, formerly Electromagnetic Field

  7. Wolfgang Ketterle Education Pre-diploma (Vordiplom), Physics, University of Heidelberg, Germany, 1978

    E-Print Network [OSTI]

    Physical Society (APS, Fellow, 1997) Optical Society of America (OSA, Fellow, 2006) American AcademyWolfgang Ketterle Education · Pre-diploma (Vordiplom), Physics, University of Heidelberg, Germany, 1978 · Diploma (Diplom, equivalent of master's degree), Physics, Technical University of Munich

  8. GEA Refrigeration Technologies / GEA Refrigeration Germany GmbH Wolfgang Dietrich / Dr. Ole Fredrich

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    Technologies3 Achema 2012 // heat pumps using ammonia Industrial demand on heat in Germany Heatdemandin Fredrich GEA Grasso heat pumps using ammonia ­ the megawatt range #12;GEA Refrigeration Technologies2 Achema 2012 // heat pumps using ammonia Heat pumps using ammonia ­ a sustainable choice How to improve

  9. DOE Signs Notice to Prepare Environmental Assessment on Proposed Project with Germany

    Broader source: Energy.gov [DOE]

    WASHINGTON, D.C. – The Energy Department recently signed a notice of intent to prepare an environmental assessment to analyze the potential environmental impacts from a proposed project to accept used nuclear fuel from the Federal Republic of Germany at DOE’s Savannah River Site (SRS) for processing and disposition.

  10. Contributions to the FEL'99 Conference, August 23-28, 1999 in Hamburg, Germany

    E-Print Network [OSTI]

    Contributions to the FEL'99 Conference, August 23-28, 1999 in Hamburg, Germany TESLA FEL of the VUV FEL at the TESLA Tesl Facility Physik, Garching Test Results on the Silicon Pixel Detector for the TTF-FEL Beam Trajectory Monitor

  11. Health Insurance In Germany there are different regulations regarding health insurance which depend on whether you

    E-Print Network [OSTI]

    Wolkenhauer, Olaf

    Health Insurance In Germany there are different regulations regarding health insurance which depend) are considered liable for compulsory health insurance and must choose a public health insurance company a voluntary insurance with a public health insurance provider or to complete a private health insurance. DAAD

  12. Photoconduction efficiencies and dynamics in GaN nanowires grown by chemical vapor deposition and molecular beam epitaxy: A comparison study

    SciTech Connect (OSTI)

    Chen, R. S. [Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Tsai, H. Y. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Huang, Y. S. [Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan (China); Chen, Y. T. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Chen, L. C. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Chen, K. H. [Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China)

    2012-09-10

    The normalized gains, which determines the intrinsic photoconduction (PC) efficiencies, have been defined and compared for the gallium nitride (GaN) nanowires (NWs) grown by chemical vapor deposition (CVD) and molecular beam epitaxy (MBE). By excluding the contributions of experimental parameters and under the same light intensity, the CVD-grown GaN NWs exhibit the normalized gain which is near two orders of magnitude higher than that of the MBE-ones. The temperature-dependent time-resolved photocurrent measurement further indicates that the higher photoconduction efficiency in the CVD-GaN NWs is originated from the longer carrier lifetime induced by the higher barrier height ({phi}{sub B} = 160 {+-} 30 mV) of surface band bending. In addition, the experimentally estimated barrier height at 20 {+-} 2 mV for the MBE-GaN NWs, which is much lower than the theoretical value, is inferred to be resulted from the lower density of charged surface states on the non-polar side walls.

  13. Surface energy calculations from Zinc blende (111)/(-1-1-1) to Wurtzite (0001)/(000-1):a study of ZnO and GaN

    E-Print Network [OSTI]

    Zhang, Jingzhao; Tse, Kinfai; Deng, Bei; Xu, Hu; Zhu, Junyi

    2015-01-01

    The accurate absolute surface energies of (0001)/(000-1) surfaces of wurtzite structures are crucial in determining the thin film growth mode of important energy materials. However, the surface energies still remain to be solved due to the intrinsic difficulty of calculating dangling bond energy of asymmetrically bonded surface atoms. In this study, we used a pseudo-hydrogen passivation method to estimate the dangling bond energy and calculate the polar surfaces of ZnO and GaN. The calculations were based on the pseudo chemical potentials obtained from a set of tetrahedral clusters or simple pseudo-molecules, using density functional theory approaches. And the surface energies of (0001)/(000-1) surfaces of wurtzite ZnO and GaN we obtained showed relatively high self-consistencies. A wedge structure calculation with a new bottom surface passivation scheme of group I and group VII elements was also proposed and performed to show converged absolute surface energy of wurtzite ZnO polar surfaces, and the result we...

  14. Total current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S. Krishnan*, N. Tipirneni*, S. Pendharkar* and J. A. del Alamo

    E-Print Network [OSTI]

    del Alamo, Jesús A.

    observed after OFF-state stress at high voltage. We attribute this to high-field tunneling-induced electron/detrapping dynamics have been extracted. All of our experimental results are consistent with electron trapping insideTotal current collapse in High-Voltage GaN MIS-HEMTs induced by Zener trapping D. Jin, J. Joh*, S

  15. Depth dependence of defect density and stress in GaN grown on SiC Department of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark,

    E-Print Network [OSTI]

    Holtz, Mark

    of Electrical and Computer Engineering, University of Delaware, 140 Evans Hall, Newark, Delaware 19716 H. Temkin Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409 I. Ahmad and M. Holtz 2 107 /cm2 in GaN layer grown by hydride vapor phase epitaxy HVPE on SiC 0001 .16 Despite a number

  16. 155:208 Chemical Engineering Thermodynamics I Spring 2015 Lectures: Tue. & Fri., 12:00 p.m.1:20 p.m., Hill-116

    E-Print Network [OSTI]

    Muzzio, Fernando J.

    155:208 Chemical Engineering Thermodynamics I Spring 2015 Lectures: Tue. & Fri., 12:00 p.m1:20 p and solve physical and chemical problems encountered in chemical and biochemical engineering. The course to apply these to the solution of chemical and biochemical engineering problems. Students will be provided

  17. An Analysis of Residential PV System Price Differences between the United States and Germany

    Broader source: Energy.gov [DOE]

    Residential photovoltaic (PV) systems were twice as expensive in the United States as in Germany (median of $5.29/W vs. $2.59/W) in 2012. This price discrepancy stems primarily from differences in non-hardware or "soft" costs between the two countries, which can only be explained in part by differences in cumulative market size and associated learning. A survey of German PV installers was deployed to collect rough data on PV soft costs in Germany to compare to results of a similar survey of U.S. PV installers. Non-module hardware costs and all analyzed soft costs are lower in Germany, especially for customer acquisition, installation labor, and profit/overhead costs, but also for expenses related to permitting, interconnection, and inspection procedures. Additional costs occur in the United States due to state and local sales taxes, smaller average system sizes, and longer project development times. To reduce the identified additional costs of residential PV systems, the United States could introduce policies that enable a robust and lasting market while minimizing market fragmentation.

  18. Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

    SciTech Connect (OSTI)

    Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

    2014-06-07

    We report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field.

  19. Does it take one or two to tango? : language skills, physical appearance, and immigrant integration in Germany

    E-Print Network [OSTI]

    Wickboldt, Anne-Katrin, 1970-

    2008-01-01

    Breaking with a long-held political stance that Germany is, despite a sizeable share of permanent immigrant residents, not a country of immigration, the German legislature has drawn up a new immigration law, which entered ...

  20. Using Vehicle Taxes to Reduce Carbon Dioxide Emissions Rates of New Passenger Vehicles: Evidence from France, Germany, and Sweden

    E-Print Network [OSTI]

    Klier, Thomas

    France, Germany, and Sweden link vehicle taxes to the carbon dioxide (CO2) emissions rates of passenger vehicles. Based on new vehicle registration data from 2005–2010, a vehicle’s tax is negatively correlated with its ...

  1. Cross-border transfer of climate change mitigation technologies : the case of wind energy from Denmark and Germany to India

    E-Print Network [OSTI]

    Mizuno, Emi, Ph. D. Massachusetts Institute of Technology

    2007-01-01

    This research investigated the causal factors and processes of international development and diffusion of wind energy technology by examining private sector cross-border technology transfer from Denmark and Germany to India ...

  2. Deep acceptors trapped at threading edge dislocations in GaN J. Elsner 1;2 , R. Jones 1 , M. Haugk 2 , Th. Frauenheim 2 , M.I. Heggie 3 , S.

    E-Print Network [OSTI]

    Jones, Robert

    Deep acceptors trapped at threading edge dislocations in GaN J. Elsner 1;2 , R. Jones 1 , M. Haugk--fold coordinated in a bridge position. V Ga --O N is found to be a deep double accecptor, V Ga --(O N ) 2 is a deep defects are responsible for a deep acceptor level associated with the mid­gap yellow luminescence band. Ga

  3. 10 Gb/s Radiation-Hard VCSEL Array Driver K.K. Gan, P. Buchholz, S. Heidbrink, H. Kagan, R. Kass, J. Moore, D.S. Smith, M. Vogt, M. Ziolkowski

    E-Print Network [OSTI]

    Gan, K. K.

    to enhance the radiation-hardness. Each ASIC contains eight low voltage differential signal (LVDS) receivers10 Gb/s Radiation-Hard VCSEL Array Driver K.K. Gan, P. Buchholz, S. Heidbrink, H. Kagan, R. Kass, JV protons to a dose of 0.92x1015 1-MeV neq/cm2 and remain operational. For the 10 Gb/s VCSEL array driver

  4. * email: nidhi@ece.ucsb.edu phone: +1-805-893-3812 ext 202 Ultra-low contact resistance for Self-aligned HEMT structures on N-polar GaN by MBE

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    * email: nidhi@ece.ucsb.edu phone: +1-805-893-3812 ext 202 Ultra-low contact resistance for SelfN) are regrown to achieve ultra-low Ohmic contact resistance. All MBE regrowths were done on MOCVD GaN templates of InN. To summarize, ultra-low Ohmic contact resistance of 60 -µm was obtained for a self-aligned devi

  5. JET Papers Presented to the 2nd Workshop on Electrical Probes in Magnetised Plasmas (Berlin, Germany, 4th-6th October 1995)

    E-Print Network [OSTI]

    JET Papers Presented to the 2nd Workshop on Electrical Probes in Magnetised Plasmas (Berlin, Germany, 4th-6th October 1995)

  6. Brine migration test report: Asse Salt Mine, Federal Republic of Germany: Technical report

    SciTech Connect (OSTI)

    Coyle, A.J.; Eckert, J.; Kalia, H.

    1987-01-01

    This report presents a summary of Brine Migration Tests which were undertaken at the Asse mine of the Federal Republic of Germany (FRG) under a bilateral US/FRG agreement. This experiment simulates a nuclear waste repository at the 800-m (2624-ft) level of the Asse salt mine in the Federal Republic of Germany. This report describes the Asse salt mine, the test equipment, and the pretest properties of the salt in the mine and in the vicinity of the test area. Also included are selected test data (for the first 28 months of operation) on the following: brine migration rates, thermomechaical behavior of the salt (including room closure, stress reading, and thermal profiles), borehole gas pressures, and borehole gas analyses. In addition to field data, laboratory analyses of pretest salt properties are included in this report. The operational phase of these experiments was completed on October 4, 1985, with the commencement of cooldown and the start of posttest activities. 7 refs., 68 figs., 48 tabs.

  7. Detection of $^{133}$Xe from the Fukushima nuclear power plant in the upper troposphere above Germany

    E-Print Network [OSTI]

    Hardy Simgen; Frank Arnold; Heinfried Aufmhoff; Robert Baumann; Florian Kaether; Sebastian Lindemann; Ludwig Rauch; Hans Schlager; Clemens Schlosser; Ulrich Schumann

    2014-12-05

    After the accident in the Japanese Fukushima Dai-ichi nuclear power plant in March 2011 large amounts of radioactivity were released and distributed in the atmosphere. Among them were also radioactive noble gas isotopes which can be used as tracers to test global atmospheric circulation models. This work presents unique measurements of the radionuclide $^{133}$Xe from Fukushima in the upper troposphere above Germany. The measurements involve air sampling in a research jet aircraft followed by chromatographic xenon extraction and ultra-low background gas counting with miniaturized proportional counters. With this technique a detection limit of the order of 100 $^{133}$Xe atoms in litre-scale air samples (corresponding to about 100 mBq/m$^3$) is achievable. Our results provide proof that the $^{133}$Xe-rich ground level air layer from Fukushima was lifted up to the tropopause and distributed hemispherically. Moreover, comparisons with ground level air measurements indicate that the arrival of the radioactive plume at high altitude over Germany occurred several days before the ground level plume.

  8. Perspectives of Future R and D on HLW Disposal in Germany

    SciTech Connect (OSTI)

    Steininger, W.J. [Forschungszentrum Karlsruhe GmbH, Project Management Agency Forschungszentrum Karlsruhe (PTKA-WTE), Eggenstein-Leopoldshafen (Germany)

    2008-07-01

    The 5. Energy Research Program of the Federal Government 'Innovation and New Technology' is the general framework for R and D activities in radioactive waste disposal. The Ministry of Economics and Technology (BMWi), the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) and the Ministry of Education and Research (BMBF) apply the Research Program concerning their respective responsibilities and competences. With regard to the Government's obligation to provide repositories for HLW (spent fuel and vitrified HAW) radioactive waste basic and applied R and D is needed in order to make adequate knowledge available to implementers, decision makers and stakeholders in general. Non-site specific R and D projects are funded by BMWi on the basis of its Research Concept. In the first stage (1998 -2001) most R and D issues were focused on R and D activities related to HLW disposal in rock salt. By that time the R and D program had to be revised and some prioritization was demanded due to changes in politics. In the current version (2001 -2006) emphasize was put on non-saline rocks. The current Research Concept of BMWi is presently subjected to a sort of revision, evaluation, and discussion, inter alia, by experts from several German research institutions. This activity is of special importance against the background of streamlining and focusing the research activities to future demands, priorities and perspectives with regard to the salt concept and the option of disposing of HLW in argillaceous media. Because the status of knowledge on disposal in rock salt is well advanced, it is necessary to take stock of the current state-of-the-art. In this framework some key projects are being currently carried out. The results may contribute to future decisions to be made in Germany with respect to HLW disposal. The first project deals with the development of an advanced safety concept for a HLW waste repository in rock salt. The second project (also carried out in the frame of the 6. Framework Program of the European Commission) aims at completing and optimizing the direct disposal concept for spent fuel by a full-scale demonstration of the technology of emplacement in vertical boreholes. The third project is devoted to the development of a reference concept to dispose of HLW in deep geological repository in clay in Germany. In the following a brief overview is given on the achievements, the projects, and ideas about the consequences for HLW disposal in Germany. (author)

  9. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  10. Assessing climate impacts of planning policies-An estimation for the urban region of Leipzig (Germany)

    SciTech Connect (OSTI)

    Schwarz, Nina Bauer, Annette Haase, Dagmar

    2011-03-15

    Local climate regulation by urban green areas is an important urban ecosystem service, as it reduces the extent of the urban heat island and therefore enhances quality of life. Local and regional planning policies can control land use changes in an urban region, which in turn alter local climate regulation. Thus, this paper describes a method for estimating the impacts of current land uses as well as local and regional planning policies on local climate regulation, using evapotranspiration and land surface emissivity as indicators. This method can be used by practitioners to evaluate their policies. An application of this method is demonstrated for the case study Leipzig (Germany). Results for six selected planning policies in Leipzig indicate their distinct impacts on climate regulation and especially the role of their spatial extent. The proposed method was found to easily produce a qualitative assessment of impacts of planning policies on climate regulation.

  11. Detection of $^{133}$Xe from the Fukushima nuclear power plant in the upper troposphere above Germany

    E-Print Network [OSTI]

    Simgen, Hardy; Aufmhoff, Heinfried; Baumann, Robert; Kaether, Florian; Lindemann, Sebastian; Rauch, Ludwig; Schlager, Hans; Schlosser, Clemens; Schumann, Ulrich

    2013-01-01

    After the accident in the Japanese Fukushima Dai-ichi nuclear power plant in March 2011 large amounts of radioactivity were released and distributed in the atmosphere. Among them were also radioactive noble gas isotopes which can be used as tracers to probe global atmospheric circulation models. This work presents unique measurements of the radionuclide $^{133}$Xe from Fukushima in the upper troposphere above Germany. The measurements involve air sampling in a research jet aircraft followed by chromatographic xenon extraction and ultra-low background gas counting with miniaturized proportional counters. With this technique a detection limit of the order of 100 $^{133}$Xe atoms in liter-scale air samples (corresponding to about 100 mBq/m$^3$) is achievable. Our results proof that the $^{133}$Xe-rich ground level air layer from Fukushima was lifted up to the tropopause and distributed hemispherically. Moreover, comparisons with ground level air measurements indicate that the arrival of the radioactive plume in ...

  12. Regulatory Control of Sealed Sources in Germany including Regulations Regarding Spent and Disused Sources - 13176

    SciTech Connect (OSTI)

    Dollan, Ralph; Haeusler, Uwe; Czarwinski, Renate

    2013-07-01

    Effective regulatory control is essential to ensure the safe and secure use of radioactive material and the appropriate management of radioactive waste. To ensure a sustainable control of high radioactive sources, the European Commission published the Council Directive 2003/122/EURATOM on the control of high-activity sealed radioactive sources and orphan sources, which had to be transferred into national legislation by all member states of the European Union. Major requirement of the Directive is a system to ensure traceability of high-activity sealed sources from 'cradle to grave' as well as the provision to take back disused sources by the supplier or manufacturer. With the Act on high-activity sealed radioactive sources Germany implemented the requirements of the Directive 2003/122/EURATOM and established a national registry of high-activity sealed sources in 2006. Currently, about 27.000 high-activity sealed sources are recorded in this national registry. (authors)

  13. Propane ammoxidation over the Mo-V-Te-Nb-O M1 phase: Reactivity of surface cations in hydrogen abstraction steps

    SciTech Connect (OSTI)

    Muthukumar, Kaliappan; Yu, Junjun; Xu, Ye; Guliants, Vadim V.

    2011-01-01

    Density functional theory calculations (GGA-PBE) have been performed to investigate the adsorption of C3 (propane, isopropyl, propene, and allyl) and H species on the proposed active center present in the surface ab planes of the bulk Mo-V-Te-Nb-O M1 phase in order to better understand the roles of the different surface cations in propane ammoxidation. Modified cluster models were employed to isolate the closely spaced V=O and Te=O from each other and to vary the oxidation state of the V cation. While propane and propene adsorb with nearly zero adsorption energy, the isopropyl and allyl radicals bind strongly to V=O and Te=O with adsorption energies, {Delta}E, being {le} -1.75 eV, but appreciably more weakly on other sites, such as Mo=O, bridging oxygen (Mo-O-V and Mo-O-Mo), and empty metal apical sites ({Delta}E > -1 eV). Atomic H binds more strongly to Te = O ({Delta}E {le} -3 eV) than to all the other sites, including V = O ({Delta}E = -2.59 eV). The reduction of surface oxo groups by dissociated H and their removal as water are thermodynamically favorable except when both H atoms are bonded to the same Te=O. Consistent with the strong binding of H, Te=O is markedly more active at abstracting the methylene H from propane (E{sub a} {le} 1.01 eV) than V = O (E{sub a} = 1.70 eV on V{sup 5+} = O and 2.13 eV on V{sup 4+} = O). The higher-than-observed activity and the loose binding of Te = O moieties to the mixed metal oxide lattice of M1 raise the question of whether active Te = O groups are in fact present in the surface ab planes of the M1 phase under propane ammoxidation conditions.

  14. European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 4CO.11.4 CELL CRACKS MEASURED BY UV FLUORESCENCE IN THE FIELD

    E-Print Network [OSTI]

    27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 4CO. Kunze Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany Tel homogenous in the PV modules. These cracks are frequently induced by crumbs or needle-shaped production

  15. STEM HAADF Image Simulation of the Orthorhombic M1 Phase in the Mo-V-Nb-Te-O Propane Oxidation Catalyst

    SciTech Connect (OSTI)

    D Blom; X Li; S Mitra; T Vogt; D Buttrey

    2011-12-31

    A full frozen phonon multislice simulation of high angle annular dark field scanning transmission electron microscopy (HAADF STEM) images from the M1 phase of the Mo-V-Nb-Te-O propane oxidation catalyst has been performed by using the latest structural model obtained using the Rietveld method. Simulated contrast results are compared with experimental HAADF images. Good agreement is observed at ring sites, however significant thickness dependence is noticed at the linking sites. The remaining discrepancies between the model based on Rietveld refinement and image simulations indicate that the sampling of a small volume element in HAADF STEM and averaging elemental contributions of a disordered site in a crystal slab by using the virtual crystal approximation might be problematic, especially if there is preferential Mo/V ordering near the (001) surface.

  16. Preprint version 2013 IEEE International Conference on Robotics and Automation, Karlsruhe, Germany Bilateral Control of the Degree of Connectivity

    E-Print Network [OSTI]

    Preprint version 2013 IEEE International Conference on Robotics and Automation, Karlsruhe, Germany Bilateral Control of the Degree of Connectivity in Multiple Mobile-Robot Teleoperation Cristian Secchi between a remote group of mo- bile robots considered as the slave-side. A distributed leader- follower

  17. World Renewable Energy Congress VII, Cologne, Germany, 29 June -5 July, 2002 SOLAR RESOURCE ASSESSMENT AND SITE EVALUATION

    E-Print Network [OSTI]

    Heinemann, Detlev

    World Renewable Energy Congress VII, Cologne, Germany, 29 June - 5 July, 2002 SOLAR RESOURCE of solar power requires reliable data on the solar energy resource. The assessment of the available solar of Energy and Semiconductor Research D-26111 Oldenburg, Phone +49 441 798 3929, Fax +49 441 798 3326, Email

  18. Wind-Power Development in Germany and the U.S.: Multiple Streams, Advocacy Coalitions, and Turning Points

    E-Print Network [OSTI]

    Qiu, Weigang

    Wind-Power Development in Germany and the U.S.: Multiple Streams, Advocacy Coalitions, and Turning). Of the various forms of renewable energy, wind-generated electricity has a unique set of advantages, which make especially large. Wind power produces relatively low levels of environmental damage over its life cycle (like

  19. Chapter 29 in Nanotechnology Handbook, B. Bhushan (ed.), Springer-Verlag, Heidelberg, Germany, 2004 Kinetics and Energetics in Nanolubrication

    E-Print Network [OSTI]

    Chapter 29 in Nanotechnology Handbook, B. Bhushan (ed.), Springer-Verlag, Heidelberg, Germany, 2004 not well-equilibrated. The challenge any nanotechnological endeavor encounters is the development.M. Overney et al. Chapter 29 in Nanotechnology Handbook, B. Bhushan (ed.), Springer-Verlag, Heidelberg

  20. T-Mobile Germany launches mobile social web services on web'n'walk Feb 12, 2008

    E-Print Network [OSTI]

    Deutschmann, Rainer

    T-Mobile Germany launches mobile social web services on web'n'walk portal Feb 12, 2008 · Agreements services T-Mobile International will extend its open mobile internet experience web'n'walk with unlimited choose from a wide range of Internet services, such as eBay, Amazon and web mail services, and integrate

  1. Detecting planets in protoplanetary disks: A prospective study Thuringer Landessternwarte Tautenburg, Sternwarte 5, D{07778 Tautenburg, Germany

    E-Print Network [OSTI]

    Kley, Willy

    . Henning Astrophysikalisches Institut und Universitats-Sternwarte, Schillergasschen 2-3, D{07745 Jena, Germany henning@astro.uni-jena.de and W. Kley Universitat Tubingen, Inst. fur Astronomie und and cause spiral density waves in the disk (see, e.g., Kley 1999, Kley et al. 2001). The gap may extend up

  2. A Top-down and Bottom-up look at Emissions Abatement in Germany in response to the EU ETS

    E-Print Network [OSTI]

    Feilhauer, Stephan M. (Stephan Marvin)

    2008-01-01

    This paper uses top-down trend analysis and a bottom-up power sector model to define upper and lower boundaries on abatement in Germany in the first phase of the EU Emissions Trading Scheme (2005-2007). Long-term trend ...

  3. 3rd Workshop on System-level Virtualization for High Performance Computing (HPCVirt) 2009, Nuremberg, Germany, March 30, 2009

    E-Print Network [OSTI]

    Engelmann, Christian

    3rd Workshop on System-level Virtualization for High Performance Computing (HPCVirt) 2009 for High Performance Computing (HPCVirt) 2009, Nuremberg, Germany, March 30, 2009 Outline · Background work #12;3/193rd Workshop on System-level Virtualization for High Performance Computing (HPCVirt) 2009

  4. Available online at www.sciencedirect.com SiliconPV: 17-20 April 2011, Freiburg, Germany

    E-Print Network [OSTI]

    -rate atomic layer deposition of Al2O3 for the surface passivation of Si solar cells Florian Wernera *, Walter Hannover, Germany Abstract High-rate spatial atomic layer deposition (ALD) enables an industrially relevant) deposited by atomic layer deposition (ALD) provides an outstanding level of surface passivation on both n

  5. Wegelerstrae 6 53115 Bonn Germany phone +49 228 73-3427 fax +49 228 73-7527

    E-Print Network [OSTI]

    Burstedde, Carsten

    Wegelerstraße 6 · 53115 Bonn · Germany phone +49 228 73-3427 · fax +49 228 73-7527 www and radiative transfer (Widmer et al. (2008)) exhibit a product structure. Here, 1 denotes the spatial three raise to the product of the macroscopic physical domain and the periodic microscopic domain of the cell

  6. R. Giegerich et al. (eds.) Computer Science and Biology. GCB'99 Hannover, Germany. Univ. Bielefeld 1999, pp. 107112

    E-Print Network [OSTI]

    Stadler, Peter F.

    R. Giegerich et al. (eds.) Computer Science and Biology. GCB'99 Hannover, Germany. Univ. Bielefeld of its free energy, W (x, #). If this energy function W were known, the native fold could in principle be predicted from the amino acid sequence by energy mini­ mization in conformation space. Although the energy

  7. Prof. Dr. Uwe Holtz Universitt Bonn Am Hofgarten 15D -53113 Bonn UHoltz@aol.com www.uni-bonn.de/~uholtz1 OECD (Hg.): DAC Peer Review Germany, Paris 2006.4

    E-Print Network [OSTI]

    Franz, Sven Oliver

    , India,39 Indonesia, Egypt and Turkey. Germany does not intend to focus only on the poorest countries40.uni-bonn.de/~uholtz1 6.4.072 3 OECD (Hg.): DAC Peer Review Germany, Paris 2006.4 (www.oecd.org/dataoecd/54 of poorer countries but need for greater strategic selectivity8 9 Germany has never stated a preference

  8. Adsorption of propane, isopropyl, and hydrogen on cluster models of the M1 phase of Mo-V-Te-Nb-O mixed metal oxide catalyst

    SciTech Connect (OSTI)

    Govindasamy, Agalya; Muthukumar, Kaliappan; Yu, Junjun; Xu, Ye; Guliants, Vadim V.

    2010-01-01

    The Mo-V-Te-Nb-O mixed metal oxide catalyst possessing the M1 phase structure is uniquely capable of directly converting propane into acrylonitrile. However, the mechanism of this complex eight-electron transformation, which includes a series of oxidative H-abstraction and N-insertion steps, remains poorly understood. We have conducted a density functional theory study of cluster models of the proposed active and selective site for propane ammoxidation, including the adsorption of propane, isopropyl (CH{sub 3}CHCH{sub 3}), and H which are involved in the first step of this transformation, that is, the methylene C-H bond scission in propane, on these active site models. Among the surface oxygen species, the telluryl oxo (Te=O) is found to be the most nucleophilic. Whereas the adsorption of propane is weak regardless of the MO{sub x} species involved, isopropyl and H adsorption exhibits strong preference in the order of Te=O > V=O > bridging oxygens > empty Mo apical site, suggesting the importance of TeO{sub x} species for H abstraction. The adsorption energies of isopropyl and H and consequently the reaction energy of the initial dehydrogenation of propane are strongly dependent on the number of ab planes included in the cluster, which points to the need to employ multilayer cluster models to correctly capture the energetics of surface chemistry on this mixed metal oxide catalyst.

  9. Multi-criteria assessment of socio-environmental aspects in shrinking cities. Experiences from eastern Germany

    SciTech Connect (OSTI)

    Schetke, Sophie Haase, Dagmar

    2008-10-15

    Demographic change and economic decline produce modified urban land use pattern and densities. Compared to the beginning of the 90s after the German reunification, nowadays massive housing and commercial vacancies followed by demolition and perforation come to pass in many cities of the former GDR. In consequence, a considerable surplus of urban brownfields has been created. Furthermore, the decline in the urban fabric affects social infrastructure and urban greenery of local neighbourhoods. Here, urban planning enters into 'uncharted territory' since it needs to assess the socio-environmental impact of shrinkage. In order to carry out such an evaluation quantitatively, a multi-criteria assessment scheme (MCA) was developed and applied. Firstly, we identified infrastructure and land use changes related to vacancy and demolition. Secondly, demolition scenarios for the coming 20 years were applied in order to give an idea for a long-term monitoring approach at the local district level. A multi-criteria indicator matrix quantifies the socio-environmental impact on both urban greenery and residents. Using it, we set demolition scenarios against urban 'quality of life' targets. Empirical evidence comes from Leipzig, in eastern Germany, a representative case study for urban shrinkage processes. The results show that shrinkage implies socio-environmental changes of residential livelihoods, however, does not simply increase or decrease the overall urban quality of life. The integrated assessment of all indicators identifies environmental and social opportunities, as well as the challenges a shrinking city is faced with.

  10. Relation between facies, diagenesis, and reservoir quality of Rotliegende reservoirs in north Germany

    SciTech Connect (OSTI)

    David, F.; Gast, R.; Kraft, T. (BEB Erdgas Erdol GmbH, Hannover (Germany))

    1993-09-01

    In north Germany, the majority of Rotliegende gas fields is confined to an approximately 50 km-wide east-west-orientated belt, which is situated on the gently north-dipping flank of the southern Permian basin. Approximately 400 billion m[sup 3] of natural gas has been found in Rotliegende reservoir sandstones with average porosities of depths ranging from 3500 to 5000 m. Rotliegende deposition was controlled by the Autunian paleo-relief, and arid climate and cyclic transgressions of the desert lake. In general, wadis and large dunefields occur in the hinterland, sebkhas with small isolate dunes and shorelines define the coastal area, and a desert lake occurs to the north. The sandstones deposited in large dunefields contain only minor amounts of illite, anhydrite, and calcite and form good reservoirs. In contrast, the small dunes formed in the sebkha areas were affected by fluctuations of the desert lake groundwaters, causing the infiltration of detrital clay and precipitation of gypsum and calcite. These cements were transformed to illite, anhydrite, and calcite-II during later diagenesis, leading to a significant reduction of the reservoir quality. The best reservoirs occur in the shoreline sandstones because porosity and permeability were preserved by early magnesium-chlorite diagenesis. Since facies controls diagenesis and consequently reservoir quality, mapping of facies also indicates the distribution of reservoir and nonreservoir rocks. This information is used to identify play area and to interpret and calibrate three-dimensional seismic data.

  11. The evolution of the break preclusion concept for nuclear power plants in Germany

    SciTech Connect (OSTI)

    Schulz, H.

    1997-04-01

    In the updating of the Guidelines for PWR`s of the {open_quotes}Reaktor-Sicherheitskommission{close_quotes} (RSK) in 1981 the requirements on the design have been changed with respect to the postulated leaks and breaks in the primary pressure boundary. The major change was a revision in the requirements for pipe whip protection. As a logical consequence of the {open_quotes}concept of basic safety{close_quotes} a guillotine type break or any other break type resulting in a large opening is not postulated any longer for the calculation of reaction and jet forces. As an upper limit for a leak an area of 0, 1 A (A = open cross section of the pipe) is postulated. This decision was based on a general assessment of the present PWR system design in Germany. Since then a number of piping systems have been requalified in the older nuclear power plants to comply with the break preclusion concept. Also a number of extensions of the concept have been developed to cover also leak-assumptions for branch pipes. Furthermore due considerations have been given to other aspects which could contribute to a leak development in the primary circuit, like vessel penetrations, manhole covers, flanges, etc. Now the break preclusion concept originally applied to the main piping has been developed into an integrated concept for the whole pressure boundary within the containment and will be applied also in the periodic safety review of present nuclear power plants.

  12. Observation of a German farm family: their culture and values, and aspects of beginning a career in agriculture in Germany 

    E-Print Network [OSTI]

    Bianchi, Beverly Ann

    1993-01-01

    OBSERVATION OF A GERMAN FARM FAMILY, THEIR CULTURE AND VALUFS, AND ASPECTS OF BEGINNING A CARFER IN AGRICULTURE IN GERMANY A PROFESSIONAL PAPER BEVERLY ANN BIANCI 11 Submitted to the College of Agriculture and Life Sciences of Texas ASM... University in partial fulfillmen of ihe requirements for the degree of MASTER OF AGRICULTURE December 1903 Department of Agricultural Education Agricultural Development OBSERVATION OF A GERMAN FARM FAMILY, THEIR CULTURE AND VALUES, AND ASPECTS...

  13. Disposal of LLW and ILW in Germany - Characterisation and Documentation of Waste Packages with Respect to the Change of Requirements

    SciTech Connect (OSTI)

    Bandt, G.; Spicher, G.; Steyer, St.; Brennecke, P.

    2008-07-01

    Since the 1998 termination of LLW and ILW emplacement in the Morsleben repository (ERAM), Germany, the treatment, conditioning and documentation of radioactive waste products and packages have been continued on the basis of the waste acceptance requirements as of 1995, prepared for the Konrad repository near Salzgitter in Lower Saxony, Germany. The resulting waste products and packages are stored in interim storage facilities. Due to the Konrad license issued in 2002 the waste acceptance requirements have to be completed by additional requirements imposed by the licensing authority, e. g. for the declaration of chemical waste package constituents. Therefore, documentation of waste products and packages which are checked by independent experts and are in parts approved by the responsible authority (Office for Radiation Protection, BfS) up to now will have to be checked again for fulfilling the final waste acceptance requirements prior to disposal. In order to simplify these additional checks, databases are used to ensure an easy access to all known facts about the waste packages. A short balance of the existing waste products and packages which are already checked and partly approved by BfS as well as an overview on the established databases ensuring a fast access to the known facts about the conditioning processes is presented. (authors)

  14. HLW Return from France to Germany - 15 Years of Experience in Public Acceptance and Technical Aspects - 12149

    SciTech Connect (OSTI)

    Graf, Wilhelm

    2012-07-01

    Since in 1984 the national reprocessing concept was abandoned the reprocessing abroad was the only existing disposal route until 1994. With the amendment of the Atomic Energy Act in 2001 spent fuel management changed completely since from 1 June 2005 any delivery of spent fuel to reprocessing plants was prohibited and the direct disposal of spent fuel became mandatory. Until 2005 the total amount of spent fuel to be reprocessed abroad added up to 6080 t HM, 5309 t HM thereof in France. The waste generated from reprocessing - alternatively an equivalent amount of radioactive material - has to be returned to the country of origin according to the commercial contracts signed between the German utilities and COGEMA, now AREVA NC, in France and BNFL, now INS in UK. In addition the German and the French government exchanged notes with the obligation of both sides to enable and support the return of reprocessing residues or equivalents to Germany. The return of high active vitrified waste from La Hague to the interim storage facility at Gorleben was demanding from the technical view i. e. the cask design and the transport. Unfortunately the Gorleben area served as a target for nuclear opponents from the first transport in 1996 to the latest one in 2011. The protection against sabotage of the railway lines and mass protests needed highly improved security measures. In France and Germany special working forces and projects have been set up to cope with this extraordinary situation. A complex transport organization was established to involve all parties in line with the German and French requirements during transport. The last transport of vitrified residues from France has been completed successfully so far thus confirming the efficiency of the applied measures. Over 15 years there was and still is worldwide no comparable situation it is still unique. Summing up, the exceptional project handling challenge that resulted from the continuous anti-nuclear civil disobedience in Germany over the whole 15-year long project running time could be faced efficiently. It has to be concluded that despite of all problems the anti-nuclear activities have caused so far, all transports of vitrified HLW have always been completed successfully by adapting the commonly established safety, security and public acceptance measures to the special conditions and needs in Germany and coordinating the activities of all parties involved but at the expense of high costs for industry and government and a challenging operational complexity. Apart from an anticipatory project planning a good communication between all involved industrial parties and the French and the German government was the key to the effective management of such shipments and to minimize the radiological, economic, environmental, public and political impact. The future will show how efficiently the gained experience can be used for further return projects which are to be realized since no reprocessed waste has yet been returned from UK and neither the medium-level nor the low-level radioactive waste has been transferred from France to Germany. (author)

  15. European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2.4 HIGH EFFICIENCY BACK-CONTACT BACK-JUNCTION SILICON SOLAR CELLS WITH CELL

    E-Print Network [OSTI]

    as minimizing the consumption of energy and material. The effect of the cell thickness on the solar cell27th European Photovoltaic Solar Energy Conference, Frankfurt, Germany, 24-28 September 2012, 2AO.2 Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany 2 Renewable

  16. From International Computer Performance and Dependability Symposium, Erlangen, Germany, April 1995, pp.285 294 MODELING RECYCLE: A CASE STUDY IN THE INDUSTRIAL USE OF

    E-Print Network [OSTI]

    Illinois at Urbana-Champaign, University of

    85721 Center for Reliable and High-Performance Computing Coordinated Science Laboratory UniversityFrom International Computer Performance and Dependability Symposium, Erlangen, Germany, April 1995, pp.285 294 MODELING RECYCLE: A CASE STUDY IN THE INDUSTRIAL USE OF MEASUREMENT AND MODELING Luai M

  17. 24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 HIGLY PREDICTIVE MODELLING OF ENTIRE SI SOLAR CELLS FOR INDUSTRIAL APPLICATIONS

    E-Print Network [OSTI]

    24th European Photovoltaic Solar Energy Conference, Hamburg, Germany, Sept. 2009 1 HIGLY PREDICTIVE Czochralski (Cz) silicon solar cells are assessed by means of highly predictive numerical modelling in two have simulations of industrial Si solar cells become highly predictive. Like in the analysis

  18. Copyright 2000 by ASME1 ASME paper 2000-GT-0253, ASME IGTI Turbo-Expo-2000, Munich, Germany, May 8-11, 2000.

    E-Print Network [OSTI]

    Dennis, Brian

    Copyright © 2000 by ASME1 ASME paper 2000-GT-0253, ASME IGTI Turbo-Expo-2000, Munich, Germany, May) and a three-dimensional (3-D) conjugate heat transfer (convection-conduction) prediction codes were developed temperature or heat flux distribution. The conjugate codes use hybrid unstructured triangular

  19. Approved Module Information for LG3015, 2014/5 Module Title/Name: East Germany on Film Module Code: LG3015

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LG3015, 2014/5 Module Title/Name: East Germany on Film Module Code: LG3015 School: Languages and Social Sciences Module Type: Standard Module New Module? No Module Credits: 10 Module Management Information Module Leader Name Claudia Gremler Email Address c

  20. Presented at the CHASE (Human and Cooperative Aspects of Software Engineering) Workshop at ICSE2008, Leipzig, Germany, May, The Economy of Collective Attention for Situated

    E-Print Network [OSTI]

    Nakakoji, Kumiyo

    Presented at the CHASE (Human and Cooperative Aspects of Software Engineering) Workshop at ICSE2008, Leipzig, Germany, May, 2008. The Economy of Collective Attention for Situated Knowledge Collaboration economy. The analytic power of the conceptual framework is illustrated in the comparison of two

  1. 3rd Work. for Young Researchers on Human-Friendly Robotics, Oct. 2010, Tubingen, Germany Towards Bilateral Teleoperation of Multi-Robot Systems

    E-Print Network [OSTI]

    3rd Work. for Young Researchers on Human-Friendly Robotics, Oct. 2010, T¨ubingen, Germany Towards Bilateral Teleoperation of Multi-Robot Systems Paolo Robuffo Giordano, Antonio Franchi, Hyoung Il Son control strategy for the bilateral teleoperation of multi-robot systems, by espe- cially focusing

  2. Presented at the 21st European Photovoltaic Solar Energy Conference, Dresden,Germany, 4-8 September 2006 ENVIRONMENTAL IMPACTS OF PV ELECTRICITY GENERATION -

    E-Print Network [OSTI]

    Presented at the 21st European Photovoltaic Solar Energy Conference, Dresden,Germany, 4-8 September.dewild@ecn.nl, Phone +31 224 564736, Fax +31 224 568214 Energy research Centre of the Netherlands ECN, Unit Solar 2006 ENVIRONMENTAL IMPACTS OF PV ELECTRICITY GENERATION - A CRITICAL COMPARISON OF ENERGY SUPPLY

  3. Name e-mail position Institution 1 Arndt, Max m.arndt@ged.rwth-aachen.de PhD RWTH-Aachen University, Geologie Endogene Dynamik, Aachen, Germany

    E-Print Network [OSTI]

    Cesare, Bernardo

    Name e-mail position Institution 1 Arndt, Max m.arndt@ged.rwth-aachen.de PhD RWTH-Aachen University, Geologie Endogene Dynamik, Aachen, Germany 2 Billia, Marco marco.billia@alumni.ethz.ch PhD Department of Geology, University of Otago, New Zealand 3 Boutonnet, Emmanuelle emmanuelle.boutonnet@ens-lyon.fr PhD

  4. 2004 35thAnnual IEEE Power Electronics SpecialistsConference Aachen, Germany. 2004 Digital Controller Design for Electronic Ballasts with Phase Control

    E-Print Network [OSTI]

    Controller Design for Electronic Ballasts with Phase Control Yan Yin and Regan Zane Colorado Power switching frequency range. In this paper, the design of a digital controller for an LCC resonant inverter2004 35thAnnual IEEE Power Electronics SpecialistsConference Aachen, Germany. 2004 Digital

  5. Departement Informatique M1 Informatique, UE 1

    E-Print Network [OSTI]

    Richer, Jean-Michel

    (string& s) qui ´elimine les espaces, tabulations et re- tour `a la ligne en partie gauche de la cha`ere de la cha^ine qui n'est pas un espace, puis la fonction erase pour supprimer les caract`eres ind´esirables. Exercice 2 - Ecrire une fonction trim right(string& s) qui ´elimine les espaces, tabulations et retour `a

  6. M 1 Partners | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc Jump to: navigation, search Name: Lyon-Lincoln Electric Coop IncPartners Jump

  7. Atmospheric Radiation Measurement (ARM) Data from Black Forest Germany for the Convective and Orographically Induced Precipitation Study (COPS)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The primary goal of the ARM Program is to improve the treatment of cloud and radiation physics in global climate models in order to improve the climate simulation capabilities of these models. ARM maintains four major, permanent sites for data collection and deploys the ARM Mobile Facility (AMF) to other sites as determined. In 2007 the AMF operated in the Black Forest region of Germany as part of the Convective and Orographically Induced Precipitation Study (COPS). Scientists studied rainfall resulting from atmospheric uplift (convection) in mountainous terrain, otherwise known as orographic precipitation. This was part of a six -year duration of the German Quantitative Precipitation Forecasting (QPF) Program. COPS was endorsed as a Research and Development Project by the World Weather Research Program. This program was established by the World Meteorological Organization to develop improved and cost-effective forecasting techniques, with an emphasis on high-impact weather. A large collection of data plots based on data streams from specific instruments used at Black Forest are available via a link from ARM's Black Forest site information page. Users will be requested to create a password, but the plots and the data files in the ARM Archive are free for viewing and downloading.

  8. A review of "Self-Defense and Religious Strife in Early Modern Europe. England and Germany 1530-1630." by Robert von Friedeburg 

    E-Print Network [OSTI]

    Paul M. Dover

    2006-01-01

    of self- defense. He endeavors to show how in the religio-political quarrels of En- gland and Scotland from the Marian period through the seventeenth century, writers on the topic looked to the historical example of Germany, drawing upon the political.... Marian exiles and Scottish Presbyterians nonetheless sought to apply German examples to Anglo-Scot- tish circumstances. The writings of David Pareus, Johannes Althusius and Henning Arnisaeus, in particular, were mined by English writers; Friedeburg?s...

  9. EA-1977: Acceptance and Disposition of Used Nuclear Fuel Containing U.S.-Origin Highly Enriched Uranium from the Federal Republic of Germany

    Broader source: Energy.gov [DOE]

    This environmental assessment (EA) will evaluate the potential environmental impacts of a DOE proposal to accept used nuclear fuel from the Federal Republic of Germany at DOE’s Savannah River Site (SRS) for processing and disposition. This used nuclear fuel is composed of kernels containing thorium and U.S.-origin highly enriched uranium (HEU) embedded in small graphite spheres that were irradiated in nuclear reactors used for research and development purposes.

  10. Best of Germany 2008

    SciTech Connect (OSTI)

    Casteel, K.

    2008-07-01

    This supplement discusses German mining equipment and technology under the following sections: mining experience and machinery export; underground mining technology; surface mining technology; materials handling technology; coal and minerals processing technology; power technology; and automation, specialized components and materials. Manufacturers of the different equipment and their contact details are given. 4 figs.

  11. FACHBEREICH GERMANY WWW

    E-Print Network [OSTI]

    Kerber, Manfred

    or odd(predecessor(0)) are thought to be neither true nor false. This phenomenon can be handled 0 0 = 1 can be (and in fact is) neither true nor false, since neither the truth nor the falsehood

  12. Calibration of Rutile (U-Th)/He Thermochronology: assessing the thermal evolution of the KTB drill hole, Germany and adjacent Bohemian Massif

    E-Print Network [OSTI]

    Wolfe, Melissa Renee

    2009-05-12

    by isotope dilution of 3 He on a quadrapole mass spectrometer. Calculation of bulk diffusion kinetics required subsequent complete degassing of the 35 sample to determine total grain gas in order to compare the cumulative fraction of gas released....A., Wagner, G.A., Hejl, E., Brown, R., and Van den Haute, P., 1997, The Cretaceous and younger thermal history of the KTB site (Germany). apatite fission-track data from the Vorbohrung. Geol. Rundschau, v.86, p. 203-209. Crowhurst, P., Farley, K., Ryan, C...

  13. IEA Wind Task 26. Wind Technology, Cost and Performance Trends in Denmark, Germany, Ireland, Norway, the European Union, and the United States. 2007 - 2012

    SciTech Connect (OSTI)

    Vitina, Aisma; Luers, Silke; Wallasch, Anna-Kathrin; Berkhout, Volker; Duffy, Aidan; Cleary, Brendan; Husabo, Leif I.; Weir, David E.; Lacal-Arantegui, Roberto; Hand, M. Maureen; Lantz, Eric; Belyeu, Kathy; Wiser, Ryan; Bolinger, Mark; Hoen, Ben

    2015-06-12

    This report builds from a similar previous analysis (Schwabe et al., 2011) exploring the differences in cost of wind energy in 2008 among countries participating in IEA Wind Task 26 at that time. The levelized cost of energy (LCOE) is a widely recognized metric for understanding how technology, capital investment, operations, and financing impact the life-cycle cost of building and operating a wind plant. Schwabe et al. (2011) apply a spreadsheet-based cash flow model developed by the Energy Research Centre of the Netherlands (ECN) to estimate LCOE. This model is a detailed, discounted cash flow model used to represent the various cost structures in each of the participating countries from the perspective of a financial investor in a domestic wind energy project. This model is used for the present analysis as well, and comparisons are made for those countries who contributed to both reports, Denmark, Germany, and the United States.

  14. ARM - News from the Gan Island Deployment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Comments?govInstrumentsnoaacrnBarrow, Alaska OutreachCalendar NSA Related Links FacilitiesNewsMedia

  15. The 22nd International Photovoltaic Science and Engineering Conference, November 05-09, 2012, Hangzhou, China Now with Siemens AG, Otto-Hahn-Ring 6, D-81739 Munich, GERMANY

    E-Print Network [OSTI]

    Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, D-31860 Emmerthal, GERMANY 2 Institute aims to reduce material costs of solar cells and PV modules by using thinner silicon materials.[1The 22nd International Photovoltaic Science and Engineering Conference, November 05-09, 2012

  16. Scalable Deep Poisson Factor Analysis for Topic Modeling Zhe Gan ZHE.GAN@DUKE.EDU

    E-Print Network [OSTI]

    Carin, Lawrence

    Dirichlet process (nHDP) (Paisley et al., 2015). The nCRP is limited because it re- quires that each

  17. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  18. Wegelerstrae # . ##### Bonn . Germany phone +## ### ###### . fax +## ### ######

    E-Print Network [OSTI]

    Burstedde, Carsten

    [7]. Due to these properties, carbon nanotubes can be used to reinforce polymer composites. Here understand the prop­ erties of polymer­carbon nanotube composites. In this work, we derive stress­strain curves from molecular dynamics simulations of polymer­carbon nanotube composites to predict

  19. Immosolar Germany | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy Resources JumpNewTexas:HydrothermallyIFBIdea OneIllumitex

  20. Perseus (Germany) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII JumpQuarterly Smart GridNorthInformation 8thPerformSystems JumpPerseus

  1. Universite Claude Bernard Lyon 1 M1 Geometrie

    E-Print Network [OSTI]

    Frabetti, Alessandra

    , N, B) le rep`ere de Fr´enet de en chaque point et (t, n) de celui de C en chaque point ´egalement

  2. Molecular analysis of Streptococcus pyogenes M1 protein

    E-Print Network [OSTI]

    McNamara, Case W.

    2006-01-01

    III) chloride holmium (III) chloride lutetium (III)acetate lutetium (III)chloride gadolinium (III) chloride

  3. CULHAM LOCAL LIAISON COMMITTEE Meeting Reference CLLC(12)M1

    E-Print Network [OSTI]

    Jones (CCFE) Ms Catherine Soltane (EFDA-JET) Mr Mike Hurp (CCFE) Cllr David Turner (OCC) Cllr T De Vere Engines) Mr Robin Holcombe (European School) Ms Kerry Broom (HPA) Apologies Dr Karl Littlewood with the NDA activities. 4. General developments Steve Cowley reported that: · At some point in the future JET

  4. ARM - VAP Product - visstpx04m1rv1minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeAProductsarsclmplcmask1clothProductssondecalcsondewndcalcrv4minnisv4minnis Documentation

  5. ARM - VAP Product - visstpx04m1rv3minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeAProductsarsclmplcmask1clothProductssondecalcsondewndcalcrv4minnisv4minnis Documentationrv3minnis

  6. ARM - VAP Product - visstpx04m1rv4minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeAProductsarsclmplcmask1clothProductssondecalcsondewndcalcrv4minnisv4minnis

  7. ARM - VAP Product - visstpx08m1rv4minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeAProductsarsclmplcmask1clothProductssondecalcsondewndcalcrv4minnisv4minnism2rv4minnis

  8. Part I--Mechanics J01M.1--Particle on a Torus J01M.1--Particle on a Torus

    E-Print Network [OSTI]

    Petta, Jason

    frame acceleration is 2 times that in the lab frame. #12;Part II--E & M J01E.3--Electromagnetic Wave on a Slab of Dielectric J01E.3--Electromagnetic Wave on a Slab of Dielectric Problem A plane electromagnetic pulse E(z, t) = f(z/c - t) is incident from vacuum at z

  9. Part I--Mechanics M04M.1--Particles on a Line M04M.1--Particles on a Line

    E-Print Network [OSTI]

    Petta, Jason

    for this estimate? #12;Part II--E & M M04E.3--Penny Thrown into a Solenoid M04E.3--Penny Thrown into a Solenoid Problem A penny is thrown towards a large solenoid magnet. The penny moves along the axis of the solenoid with a frictionless constraint which keeps the plane of the penny perpendicular to the solenoid axis. As the penny

  10. VOLUME 80, NUMBER 21 P H Y S I C A L R E V I E W L E T T E R S 25 MAY 1998 Femtosecond Four-Wave Mixing Experiments on GaAs Quantum Wells

    E-Print Network [OSTI]

    Hohng, Sung Chul

    Materialwissenschaften, Phillips-Universtät Marburg, 35032 Marburg, Germany D. H. Woo, E. K. Kim, and S. H. Kim Korea when v2 is completely below the exciton energies, with no spectral overlap with the absorption profile further extended the usage of FWM into wide band gap materials such as ZnSe [4] and GaN [5]. Most

  11. Energy conservation and electricity sector liberalization: Case-studies on the development of cogeneration, wind energy and demand-side management in the Netherlands, Denmark, Germany and the United Kingdom

    SciTech Connect (OSTI)

    Slingerland, S.

    1998-07-01

    In this paper, the development of cogeneration, wind energy and demand-side management in the Netherlands, Denmark, Germany and the United Kingdom are compared. It is discussed to what extent these developments are determined by the liberalization process. Three key liberalization variables are identified: unbundling, privatization and introduction of competition. The analysis suggests that unbundling prior to introduction of full competition in generation is particularly successful in stimulating industrial cogeneration; simultaneous introduction of competition and unbundling mainly stimulates non-cogeneration gas-based capacity; and introduction of competition in itself is likely to impede the development of district-heating cogeneration. Furthermore, it is argued that development of wind energy and demand-side management are primarily dependent on the kind of support system set up by policy makers rather than on the liberalization process. Negative impacts of introduction of competition on integrated resource planning and commercial energy services could nevertheless be expected.

  12. ARM - Field Campaign - AMIE-Gan Ancillary Disdrometer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve4AJ01) (See22, 2012III ARM Data Discovery Browse

  13. ARM - Field Campaign - ARM MJO Investigation Experiment on Gan Island

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve4AJ01) (See22, 2012III ARM Data DiscoveryIV

  14. Lu Gan | Center for Bio-Inspired Solar Fuel Production

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion to localPartnership will aidLSMCELower crude

  15. EDA501 Programmering --vningstider VT2 2015 version 24/3 Grupp M1.01-04 Grupp M1.05-08 Grupp M1.09-12 Grupp M1.13-16 Grupp M1.17-20 Grupp BK,MD

    E-Print Network [OSTI]

    , Markus Huber, Daniel Karlsson, Jonas Härder, Linnéa Göransson, Johan Heffler, Niklas Evander, Alex, Kristoffer Nilsson, Amanda Miraljemovic, Denis Runesson, Julia Möller, Jesper Nordgren, Pascal Nylin, Malin

  16. EDA501 Programmering --vningstider VT1 2015 version 27/1 Grupp M1.01-04 Grupp M1.05-08 Grupp M1.09-12 Grupp M1.13-16 Grupp M1.17-20

    E-Print Network [OSTI]

    , Jacob Hogman, Oskar Deniz, Johan Egelberg, Linn Ericsson, Felix Davidsson, Matilda Huber, Daniel Magnusson, Sofia Nilsson, Amanda Minnhagen, Philip Runesson, Julia Månsson, Pontus Markhed Maxe, Fabian

  17. 15-16 October 2013, Nurnberg, Germany

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    «waterwater» 100 kW: EcoCute, Stiebel Eltron, Carrier Mitsubishi Electric, Advansor, thermea & middlecapacity HP CO2 10 #12;EcoCute, Stiebel Eltron etc. Lowcapacity "airwater" HP CO2 11 #12;thermea. Advansor

  18. Visit of the Federal President of Germany

    ScienceCinema (OSTI)

    None

    2011-04-25

    Le D.G. H.Schopper a le plaisir de souhaiter la bienvenue au président de la République fédérale allemande, Richard von Weizsäcker (président féderale de 1984-1994). C'est la première visite d'un président allemand dans l'histoire du Cern.

  19. Florian Daiber DFKI GmbH, Germany

    E-Print Network [OSTI]

    -up displays (HUDs) #12;Recent wearable HUD technology http://tele-pathy.ushttp://www.vuzix.com http prototype Bike assistant application on a Glass device HUD for personal and collaborative sports training

  20. Telematics group University of Gttingen, Germany

    E-Print Network [OSTI]

    Fu, Xiaoming

    amount to mechanisms for limiting the amount of traffic entering the network ­ Sometimes the load is more value of RcvWindow in segments · Sender limits unACKed data to RcvWindow ­ guarantees receive buffer much data too fast for network to handle" · different from flow control! · manifestations: ­ lost

  1. Telematics group University of Gttingen, Germany

    E-Print Network [OSTI]

    Fu, Xiaoming

    the network ­ Sometimes the load is more than the network can handle #12;5WS 2003/04, fu spare room by including value of RcvWindow in segments · Sender limits unACKed data to Rcv to handle" · different from flow control! · manifestations: ­ lost packets (buffer overflow at routers

  2. Alliance of Science Organisations in Germany

    E-Print Network [OSTI]

    Falge, Eva

    on the ability to reprocess existing data in the light of altered queries. By linking data sets already collected

  3. Hamburg, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,SolarFERCInformationVirginia:Hamblen County,

  4. Enex Power Germany | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH JumpEllenville, NewLtdEnergypedia Jump to:Enernoc Address: 1010Power

  5. Munich, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: EnergyInformationOliver, Pennsylvania:(CTIMultitradeMunhall,

  6. Cologne, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler,Coal TechnologiesClio Power LtdCounty Elec Coop, Inc

  7. Arnstadt, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to: navigation,Summaries |AreteArianeEnergy Pvt Ltd

  8. Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEniaElectric Jump to:Ger te

  9. Hannover, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen River Power Co LtdGuntherGreens LaserGroup

  10. Greenpeace Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New PagesInformation Regional Inventory ProtocolGreenpeace Energy

  11. Bonn, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin:Pontiac Biomass FacilityBluegrass Ridge Wind2BoeingBoltonBonn,

  12. Wilhelmshaven, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (Utility Company)Idaho)VosslohWest PlainsAssn,WilderHill New

  13. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy ElectricalsFTL Solar JumpNetworkingGAOH Offshore Jump

  14. Part I--Mechanics M98M.1--Mass on a Rope and Cylinder M98M.1--Mass on a Rope and Cylinder

    E-Print Network [OSTI]

    Petta, Jason

    with diameter d = 1 cm in the vertical side of a container. The center of the hole is h = 1 m below the top cm-2 = 1 × 105 N m-2 , and density of water = 1 g cm-3 . a) Water is flowing out of a hole of the water. The diameter of the container is D = 10 m. Compute the speed of the water as it passes through

  15. Films for a New Germany: British Documentaries and the Reeducation of West Germany

    E-Print Network [OSTI]

    August-Schmidt, Tatiana

    2014-01-01

    Jennings and British Documentary Film: A Re-Assessment.non-theatrical release documentary films shown in schools toRussian democracy” and documentary films filled this role.

  16. Water/Wastewater Engineering Report (Storm Sewer/Infiltration Sanitary Sewage Separation-M1 Model) 

    E-Print Network [OSTI]

    Liu, Z.; Brumbelow, K.; Haberl, J. S.

    2006-10-30

    In some cities, the municipal sewer system collects both storm water and sanitary sewage in the same pipes. During dry weather these sewers carry all the sanitary sewage to the wastewater treatment plant for treatment. However, when rainstorms...

  17. Crust formation and its role during bread baking1 Vanin, F.M.1,2

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    according to a distinct local heat-moisture treatment. As soon as the dough is placed in the oven, water in the literature are discussed. Keywords crust, bread, baking, water loss, temperature, heating rate, heat and mass 48 21 15. 1 E-mail address: tiphaine.lucas@cemagref.fr Author-produced version of the article

  18. M1G / M2G Rotation Summaries Thursday, August 15th

    E-Print Network [OSTI]

    Engelhardt, John F.

    and ATF4 Mediate Distinct and Additive Pathways to Disuse Skeletal Muscle Atrophy" Krishna Iyer, M5G "Dual Energy CT method to assess heterogeneity of perfused blood volume in smokers susceptible to emphysema" 3

  19. Compass-M1 Broadcast Codes and Their Application to Acquisition and Tracking

    E-Print Network [OSTI]

    Gao, Grace Xingxin

    . David has worked previously for Lockheed Martin and for the Intel Corporation. Todd Walter is a Senior MIT in 2001. His current research interests involves UXOs, sensor fusion, autonomous helicopters

  20. A. E. K. Ris Ris-M-[ 1U07 Title and author(s)

    E-Print Network [OSTI]

    -+- 7 illustrations Date Department or group Reactor Physics Department Group's own registration numbers) Abstract A method for treating heterogeneities in diffusion calculations for a reactor is de- scribed.2. Principles of the Monte Carlo Calculation ... 5 2.3. The Monte Carlo Program MOVAX 8 2.3.1. Data Input 8 2

  1. M1 GEOMETRIE -COURBES GAUCHES octobre 2011 Exercice 1 Considerons la courbe de R3

    E-Print Network [OSTI]

    Frabetti, Alessandra

    , param´etr´ee par l'abscisse curviligne s. On note t(s), n(s), b(s) le tri`edre de Fr´enet, k(s) la

  2. Proposition de stage (M1) de Segret Boris Nom : Segret Boris

    E-Print Network [OSTI]

    Aulanier, Guillaume

    pour BIRDY, un CubeSat interplanétaire de survol de Mars et retour. Ces outils sont sous OCTAVE/MATLAB

  3. Universite Paris 7-Denis Diderot Alg`ebre Annee 2007-08 M1 mathematiques

    E-Print Network [OSTI]

    Merel, Loïc - Institut de Mathématiques de Jussieu, Université Paris 7

    ¦§i ¡¥ ¼ E¸ °5° ¾¤Eh°Q«E%ªEºV¦§¤E¥6 m¥¥b¤h%ªE¦§h¾« o¢¤h °y m¦®T¦ m¦§h ¡ib5 ¡r¤h³¥ Ãæf¾° Ë 5°¹ m¥«h º

  4. Lima de Azevedo, Ins M. 1 Ins M. Lima de Azevedo

    E-Print Network [OSTI]

    Improvements and Challenges Presented by Small Modular Reactors, Progress in Nuclear Energy 80, 102-109. [4.L.*, Jaramillo, P., (2014). Regional energy and GHG savings from building codes across the United States) Economics analysis on the profitability of wind in Portugal between 1992 and 2010, Energy Economics, 45: 353

  5. C:\MYDOCS\FBSS-M~1\HATTIE\LAYOUT94.TXT

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustments (Billion Cubic Feet)Decade Year-0ProvedDecade2,948 2,724per ThousandLease0 0 20 0Cubic L1993 Federal

  6. SECTION M EVALUATION FACTORS FOR AWARD TABLE OF CONTENTS M-1 EVALUATION OF PROPOSALS .....................................................................................2

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia4)9 Federal Register / Vol. 76,EXAMPLERevision* S HN,

  7. SECTION M EVALUATION FACTORS FOR AWARD TABLE OF CONTENTS M-1 EVALUATION OF PROPOSALS .....................................................................................2

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield Municipal GasAdministration Medal01 Sandia4)9 Federal Register / Vol. 76,EXAMPLERevision* S HN,M

  8. Microsoft Word - Sandia-VT M-1 Summary Report_FINAL.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJessework uses concrete7 Assessment ofLana Cox (803) TO:1NUCLEAR DYNAMICSRigorA

  9. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect (OSTI)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ?10{sup 17}?cm{sup ?3} to (2–5)?×?10{sup 14}?cm{sup ?3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ?5?×?10{sup 13}?cm{sup ?3} versus 2.9?×?10{sup 16}?cm{sup ?3} in the standard samples, with a similar decrease in the electron traps concentration.

  10. Negative differential resistance in GaN tunneling hot electron transistors

    SciTech Connect (OSTI)

    Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

    2014-11-17

    Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

  11. Actions as Special Cases Selim T. Erdo gan and Vladimir Lifschitz

    E-Print Network [OSTI]

    Lifschitz, Vladimir

    representation: the design of action description languages and the development of libraries of reusable, general conjecture that a library of standard descriptions for a number of ``basic'' actions can facilitate writing how such a library, writ­ ten in the action language C+, can be used. When using an instance

  12. Optimal Decentralized Protocol for Electric Vehicle Charging Lingwen Gan Ufuk Topcu Steven Low

    E-Print Network [OSTI]

    Low, Steven H.

    is to shift the load due to electric vehicles to fill the overnight electricity demand valley. In each demand is minimized, and the aggregated demand profile is as "flat" as it can possibly be. The proposed energy efficiency, reducing greenhouse gas emissions, and relieving reliance on foreign oil

  13. K.K. Gan 1 Plan for Truelight VCSEL Lifetime Study

    E-Print Network [OSTI]

    Gan, K. K.

    twisted pairs 160 Mb/s data signal in 28 AWG twisted pairs current Type-0 cables use up to 1.4 m calorimeter also die LHCb out straw tracker has ~1% failure (ULM (Philips)) mishandled arrays somehow? thermal stress because array is mounted on FR-4? mechanical stress from optical epoxy covering VCSEL

  14. Materials Data on GaN (SG:225) by Materials Project

    SciTech Connect (OSTI)

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  15. Dynamic ON-resistance in high voltage GaN field-effect-transistors

    E-Print Network [OSTI]

    Jin, Donghyun

    2014-01-01

    Recently, the development of energy efficient electrical power management systems has received considerable interest due to its potential to realize significant energy savings for the world. With current Si-based power ...

  16. Min-max Transfer Capability: A New Concept D. Gan X. Luo D. V. Bourcier

    E-Print Network [OSTI]

    a DC load flow setting. A generalization of the algorithm to problems using an AC load flow is briefly, Optimization, Transfer Capability Introduction The notion of the transfer capability of a transmission interface is often used by operators for monitoring transmission system security. Traditionally, the maximum

  17. Deeply-scaled GaN high electron mobility transistors for RF applications

    E-Print Network [OSTI]

    Lee, Dong Seup

    2014-01-01

    Due to the unique combination of large critical breakdown field and high electron velocity, GaN-based high electron mobility transistors (HEMTs) have great potential for next generation high power RF amplifiers. The ...

  18. GaN Nanowire Arrays for High-Output Nanogenerators Chi-Te Huang,,

    E-Print Network [OSTI]

    Wang, Zhong L.

    Although our current energy relies on fossil fuels, searching for nanoenabled sustain- able green energy to be utilized for piezoelectric energy generation with a performance probably better than that of ZnO NWs. Introduction Energy is the fundamental deciding factor for the sustainable development of human civilization.1

  19. Free Carrier Absorption due to Dislocation Scattering in GaN Quantum Wells

    SciTech Connect (OSTI)

    Vaidya, R. G. [Department of Physics, Karnatak University, Dharwad, Karnataka (India); Department of Physics, Tumkur University, Tumkur, Karnataka, 572102 (India); Sankeshwar, N. S.; Mulimani, B. G. [Department of Physics, Karnatak University, Dharwad, Karnataka (India)

    2011-10-20

    Free carrier absorption (FCA) is studied in quantum well structures assuming electrons to be scattered by dislocations via strain field. Expression for FCA coefficient, {alpha} is obtained assuming radiation field to be polarized along the plane of quantum well. Numerical results of {alpha}, as function of photon frequency, {Omega} and well width, d are presented. Calculations show, FCA to decrease with increase in {Omega} with a kink observed at {Omega} = 7.79x10{sup 13} s{sup -1} indicating onset of inter subband transitions. {alpha} is found to be proportional to d{sup -3} and to increase with increase in dislocation density.

  20. Functional Mn–Mg{sub k} cation complexes in GaN featured by Raman spectroscopy

    SciTech Connect (OSTI)

    Devillers, T. Bonanni, A.; Leite, D. M. G.; Department of Physics, São Paulo State University, Bauru–SP ; Dias da Silva, J. H.

    2013-11-18

    The evolution of the optical branch in the Raman spectra of (Ga,Mn)N:Mg epitaxial layers as a function of the Mn and Mg concentrations, reveals the interplay between the two dopants. We demonstrate that the various Mn-Mg-induced vibrational modes can be understood in the picture of functional Mn–Mg{sub k} complexes formed when substitutional Mn cations are bound to k substitutional Mg through nitrogen atoms, the number of ligands k being driven by the ratio between the Mg and the Mn concentrations.

  1. LiNbO3 thin film growth on (0001)-GaN Peter J. Hansen

    E-Print Network [OSTI]

    York, Robert A.

    generation (SHG) or surface acoustic wave (SAW) filters. The utilization of the polar nature of LiNbO3 has, 1-11-2 Osaki, Shinagawa-ku, Tokyo 141-0032, Japan Yuan Wu Materials Department, University for application in future generation microwave power devices4­6 The extremely high charge density at the Al

  2. Ultra-short channel GaN high electron mobility transistor-like...

    Office of Scientific and Technical Information (OSTI)

    based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In...

  3. Wirelessly Lockpicking a Smart Card Reader Flavio D. Garcia, Gerhard de Koning Gans, and Roel Verdult

    E-Print Network [OSTI]

    Verdult, Roel

    against iClass Elite (a.k.a., iClass High Security). In order to recover a secret card key, the first system if you are willing to pay a higher price. The iClass Elite Program (a.k.a., High Security) uses

  4. A conductivity-based selective etching for next generation GaN devices

    E-Print Network [OSTI]

    Cao, Hui

    -of-concept demonstrations of photonic and microelectromechanical system (MEMS) device struc- tures facilitated by this new Keywords III­V semiconductors, conductivity, electrochemical etching, microelectromechanical devices the feasibility of novel optical and microelectromechanical system devices. The electrochemical etching exhibited

  5. K.K. Gan Siena02 1 The Ohio State University

    E-Print Network [OSTI]

    Gan, K. K.

    input signal into single-ended signal appropriate to drive VCSEL diode l Output (bright) current: 0 Rise & fall times: 1 ns nominal (80 MHz signals) l Duty cycle: (50 +/- 4)% l "On" voltage of VCSEL: up signal: 40-600 mA l Extract: 40 MHz clock l Duty cycle: (50 +/- 4)% l Total timing error:

  6. Westport Germany GmbH | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland: Energy ResourcesVermont: Energy ResourcesWestport

  7. Universitt Ulm | 89069 Ulm | Germany Fakultt fr Ingenieurwissenschaften

    E-Print Network [OSTI]

    Ulm, Universität

    Gesellschaft für iOS und Android 15 2.3.3. Gluten-free Scanner für Android . . . . . . . . . . . . . . . . . . . 17 2.3.4. The Gluten Free Scanner für Android . . . . . . . . . . . . . . . . 18 2.3.5. Open Work . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2.3.1. GlutenCheck App für

  8. Global Imbalances: Is Germany the new China? A Skeptical View

    E-Print Network [OSTI]

    Aizenman, Joshua; Sengupta, Rajeswari

    2010-01-01

    World Economic Outlook (WEO) Age Dependency Ratio, Young (growth rate, Own growth rate World Economic Outlook (WEO)

  9. Institute of Applied Physics University of Mnster, Germany

    E-Print Network [OSTI]

    Purwins, Hans-Georg

    by a Stirling cooler (down to 77 K) and coupled with an ICCD camera by means of a relay lens. (d) Near-IR camera cell Visible camera with lens input ..by relay lens coupling ..by fiber optical (FO) coupling III...Selected Test 10 mm 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 Outputintensity,a.u. Time, ns Time

  10. Universitt Ulm | 89069 Ulm | Germany Fakultt fr Ingenieurwissenschaften

    E-Print Network [OSTI]

    Ulm, Universität

    Integrated Manufacturing EPK Ereignisgesteuerte Prozesskette ER Entity Relationship ERM Entity Relationship) Entity Relationship Model (ERM) Geschäftsprozess (GP) Grundsätze ordnungsmä�iger Modellierung (Go

  11. Welfare State Integration of Immigrants: the Case of Germany

    E-Print Network [OSTI]

    Heckmann, Friedrich

    2012-01-01

    the integration concept concerning education is to improveeducation, particularly intothedualsystem. Another section theintegration of concept

  12. Felix Hausdorff and the Hausdorff edition Erhard Scholz, (Wuppertal, Germany)

    E-Print Network [OSTI]

    Scholz, Erhard

    adapting to the values of the Wilhelminean offi- cer corps. At the time it was quite successful. It had about 300 perfor- mances between 1904 and 1930 at about 40 towns, among them Berlin, Budapest, Prag

  13. International Conference on Hydroinformatics HIC 2012, Hamburg, GERMANY

    E-Print Network [OSTI]

    Stanford University

    is an effective means to reduce freshwater consumption and irrigation costs. This paper presents the design one billion people worldwide are living without access to clean freshwater [2]. Main culprits behind water shortages. Increasing water, food and energy prices, and hampered agricultural productivity have

  14. Universitt Ulm | 89069 Ulm | Germany Fakultt fr Ingenieurwissenschaften

    E-Print Network [OSTI]

    Ulm, Universität

    .4 Geräte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 4 Raspberry Pi

  15. Future Possibilities for HERA G. H. Hoffstaetter, DESY, Hamburg, Germany

    E-Print Network [OSTI]

    Hoffstaetter, Georg

    HERA or pos- sibly form TESLA. 1 STATUS OF HERA With a length of 6336m, HERA is the largest accelerator for providing HERA's high energy collisions. The other two are the 2nd generation light source DORIS and the TESLA Test Facility (TTF) with its integrated SASE FEL which produces the world's highest energy FEL x

  16. FORMALISM HELPS IN DESCRIBING ACCIDENTS Peter Ladkin, Universitt Bielefeld, Germany

    E-Print Network [OSTI]

    Ladkin, Peter B.

    , such reasoning engineering is both essential and non-trivial. Accident reports in aviation present careful disagreement systems resulting from maintenance-induced damage leading to the separation of the No. 1 engine maintenance procedures which led to failure of the pylon structure. We shall analyse this statement

  17. MaxPlanckInstitut fur Physik Munich, Germany

    E-Print Network [OSTI]

    of the neutrino and its absolute mass-scale by searching for the neutrinoless double­beta decay of 76Ge. The goal

  18. Research at OFFIS Energie, Oldenburg, Germany Nicholas A. Brown

    E-Print Network [OSTI]

    McCalley, James D.

    · Partners: German Aerospace Center, Fraunhofer IWES Nordwest · PV, fuel cells, combined heat and power leads simulation group Systems Analysis and Distributed Optimization Architecture Engineering After · When using mosaik to run PyPower, PyPower runs high-voltage optimal power flow (least cost

  19. SYLLABUS FINDING NANO 2015 DISCOVERING NANOTECHNOLOGY AND CULTURE IN GERMANY

    E-Print Network [OSTI]

    : Nanophysics and Nanotechnology: An Introduction to Modern Concepts in Nanoscience, 2nd ed., Wiley-VCH, 2006SCI Course title: NanoSCI - Electronic Properties of Nanoengineered Materials Catalog description: Physics. John H. Davies: The Physics of Low Dimensional Semiconductors: An Introduction, Cambridge University

  20. DECOMMISSIONING OF NUCLEAR FACILITIES IN GERMANY - STATUS AT BMBF SITES

    SciTech Connect (OSTI)

    Papp, R.; Komorowski, K.

    2002-02-25

    In a period of approximately 40 years prior to 1994, the German Federal Government had spent about {approx} 15 billion to promote nuclear technology. These funds were earmarked for R&D projects as well as demonstration facilities which took up operation between 1960 and 1980. These BMBF (Federal Ministry for Research) facilities were mainly located at the sites of the federal research centers at Juelich and Karlsruhe (the research reactors AVR, FR2, FRJ-1, KNK, and MZFR, the pilot reprocessing plant WAK) but included also the pilot plants SNR-300 and THTR-300 for fast breeder and high-temperature gas-cooled reactor development, respectively, and finally the salt mine Asse which had been used for waste emplacement prior to conversion into an underground research laboratory. In the meantime, almost all of these facilities were shut down and are now in a state of decommissioning and dismantling. This is mainly due to the facts that R&D needs are satisfied or do not exist any more and that, secondly, the lack of political consensus led to the cancellation of advanced nuclear technology.

  1. The Paradigmatic American Occupation of Germany In Comparative Perspective 

    E-Print Network [OSTI]

    Greeson, Matthew Lee

    2014-09-24

    parties and by 1946 there were two major parties that had begun to flourish in the American occupied zone. The Christlich Demokratische Union Deutschlands (CDU) and the Sozialdemokratische Partei Deutschlands (SPD) became two of the most powerful...

  2. The Mormons in Nazi Germany: History and Memory 

    E-Print Network [OSTI]

    Nelson, David Conley 1953-

    2012-10-24

    This dissertation studies a small American religious group that survived unscathed during the Third Reich. Some fifteen thousand members of the Church of Jesus Christ of Latter-day Saints, the Mormons, lived under National Socialism. Unlike...

  3. EWIS European wind integration study (Smart Grid Project) (Germany) | Open

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to: navigation, search Name: ETEC GmbHUnited Kingdom)EnergyEnergy

  4. Etelligence (Smart Grid Project) (Cuxhaven, Germany) | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:ofEnia SpA Jump to:Energy TechLtdaEstelar EngenhariaEtec E

  5. MHK Projects/Munich Germany SHP | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenarios Towards 2050 JumpCoos Bay OPTHalf| OpenMauriceMississippiMunich

  6. MHK Projects/Rosenheim Germany SHP | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenarios Towards 2050 JumpCoos BayOysterReliance Light Project

  7. Restructuring “Germany Inc.”: The Politics of Company and Takeover Law Reform in Germany and the European Union

    E-Print Network [OSTI]

    Cioffi, John W.

    2002-01-01

    allowing a compulsory buyout of minority shareholders, and2001a) Bushrod, Lisa, “Buyouts: Still Awaiting a Boom,”

  8. C.V and Recent Articles I was born in Cologne, Germany in 1927, left Nazi Germany for England on

    E-Print Network [OSTI]

    Qian, Ning

    research and teaching activities have been concentrated in urban poverty and anti-poverty planning,Plans and Policies: Essays on Poverty, Racism and Other National Urban Problems (Columbia Univ.Press and Russell Sage have been a consultant for many civil rights, anti-poverty and planning agencies; also for the Ford

  9. OPEN 4:30p.m. 1:00a.m. daily (except University holidays)

    E-Print Network [OSTI]

    McConnell, Terry

    $ 1.85 Cran-Grape. Strawberry- Kiwi, Apple, Grapefruit Ice Tea $ 1.59 Lemon, Peach, Raspberry, Green Tea, Unsweetened, Citrus, Diet Box of Joe $15.59 FLAVORS: Chocolate Fudge Brownie, Chocolate Chip

  10. 29.01.03.M1.09 Information Resources Crisis Management Page 1 of 7 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    which uses Information Technology Infrastructure Library (ITIL) terminology, this SAP utilizes the term

  11. 29.01.03.M1.30 Information Resources Wireless Access Page 1 of 5 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    wireless bridge, switch or router connected to the Texas A&M network that is not installed, supported) and smart phones. Official Procedures 1. GENERAL The main objective of the wireless network is to provide

  12. R-Process Nucleosynthesis In Neutrino-Driven Winds From A Typical Neutron Star With M = 1.4 Msun

    E-Print Network [OSTI]

    M. Terasawa; K. Sumiyoshi; S. Yamada; H. Suzuki; T. Kajino

    2002-06-18

    We study the effects of the outer boundary conditions in neutrino-driven winds on the r-process nucleosynthesis. We perform numerical simulations of hydrodynamics of neutrino-driven winds and nuclear reaction network calculations of the r-process. As an outer boundary condition of hydrodynamic calculations, we set a pressure upon the outermost layer of the wind, which is approaching toward the shock wall. Varying the boundary pressure, we obtain various asymptotic thermal temperature of expanding material in the neutrino-driven winds for resulting nucleosynthesis. We find that the asymptotic temperature slightly lower than those used in the previous studies of the neutrino-driven winds can lead to a successful r-process abundance pattern, which is in a reasonable agreement with the solar system r-process abundance pattern even for the typical proto-neutron star mass Mns ~ 1.4 Msun. A slightly lower asymptotic temperature reduces the charged particle reaction rates and the resulting amount of seed elements and lead to a high neutron-to-seed ratio for successful r-process. This is a new idea which is different from the previous models of neutrino-driven winds from very massive (Mns ~ 2.0 Msun) and compact (Rns ~ 10 km) neutron star to get a short expansion time and a high entropy for a successful r-process abundance pattern. Although such a large mass is sometimes criticized from observational facts on a neutron star mass, we dissolve this criticism by reconsidering the boundary condition of the wind. We also explore the relation between the boundary condition and neutron star mass, which is related to the progenitor mass, for successful r-process.

  13. 51.06.99.M1 Naming of Buildings & Other Entities Page 1 of 2 UNIVERSITY RULE

    E-Print Network [OSTI]

    Policy 51.06, System Policy 21.05, System Regulation 21.05.01, and University SAP 21.05.01.M0.01 Contact In conjunction with System Policy, Texas A&M University will seek to honor or memorialize individuals into the DSC approved philanthropy plan for renovation projects. o Demolition/Organizational Elimination

  14. A.E. K.Ris Ris -M -1 i34b Title and author(s)

    E-Print Network [OSTI]

    + tables + illustrations Date Department or group Chemistry Group's own registration number(s) Abstract computer at Ris«. In its present form it c m handle up to six hundred rhannels and fit up to eight lines

  15. 29.01.03. M1.19 Information Resources Security Awareness Training Page 1 of 2 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    and require acknowledgement as determined by the department. 2.3 Departmental information technology personnel For interpretation or clarification, contact Information Technology Risk Management. OFFICE OF RESPONSIBILITY: Associate Vice President for Information Technology & Chief Information Officer #12;

  16. 29.01.03.M1.28 Information Resources Security Surveillance Page 1 of 4 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    by the Associate Vice President for Information Technology & Chief Information Officer to review AVST installations for Information Technology & Chief Information Officer, Networking and Information Security, University P ol i ce is to provide recommendations to the Associate Vice President for Information Technology & Chief Information

  17. 32.01.99.M1, Complaint Procedures for Electronic Information Resources Page 1 of 2 UNIVERSITY RULE

    E-Print Network [OSTI]

    / Responsibilities/ Process 1. REPORTING 1.1 The Office of the Associate Vice President for Information Technology for Information Technology & Chief Information Officer office through email message to complaint@tamu.edu. Reports for Information Technology & Chief Information Officer is responsible for a determination as to whether

  18. Search for 14.4 keV solar axions from M1 transition of Fe-57 with CUORE

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail. (Conference) | SciTechsaturated

  19. Search for 14.4 keV solar axions from M1 transition of Fe-57 with CUORE

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail. (Conference) | SciTechsaturatedcrystals (Journal Article) | SciTech Connect

  20. Analysis of International Policies In The Solar Electricity Sector: Lessons for India

    E-Print Network [OSTI]

    Deshmukh, Ranjit

    2011-01-01

    in 10 years.” Germany’s Renewable Energy Sources Act (expansion of Germany’s renewable energy portfolio includingrenewable energy, coupled with Germany’s own planned phase-

  1. Wetlands protection acts: a closer look 

    E-Print Network [OSTI]

    Linton, Margaret Temple

    1983-01-01

    of project. Recommended: Delaware (C), and Oregon (C). Required: New Jersey (C, D), and Pennsylvania (C, D). Im act of Su ort1n Structures Only Delaware specifically requests that any impact of support1ng structures or other support facilities associated... or impact the project/activity will have on the sur- rounding or local areas. Recommended: Mich1gan, Maryland, M1ssissippi, Delaware, South Required: Carolina, Virgin1a, and New York. Pennsylvania. Proximit to Other Waterwa s Under this criter1on...

  2. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    E-Print Network [OSTI]

    Yu, K. M.

    2010-01-01

    acceptable solar response and efficiency and sufficient5,6] and high efficiency hybrid solar cells [7,8]. Into design high efficiency multijunction solar cells [37,38

  3. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  4. Magnetic and structural properties of Mn-implanted GaN N. Theodoropoulou and A. F. Hebard

    E-Print Network [OSTI]

    Hebard, Arthur F.

    process- ing, and storage and in photonics. It has been demonstrated in a number of semiconductors, and S. J. Peartona) Department of Materials Science and Engineering, University of Florida, Gainesville hole concentration of 2 1017 cm 3 . Mn ions were implanted at an energy of 250 keV and doses from 1015

  5. Design, characterization, and modeling of GaN based HFETs for millimeter wave and microwave power amplifier applications

    E-Print Network [OSTI]

    Conway, Adam M.

    2006-01-01

    for Microwave and Millimeter-Wave Power Applications,” IEDM.power microwave and millimeter wave power amplifiers. Whilemicrowave and millimeter- wave power amplifier applications.

  6. Doping of GaN12xAsx with high As content A. X. Levander,1,2

    E-Print Network [OSTI]

    Wu, Junqiao

    ,5 Alloying of a-Si has led to multi-junction solar cells with somewhat higher efficiencies, but it also

  7. GaN1-xBix: Extremely mismatched semiconductor alloys A. X. Levander,1,2

    E-Print Network [OSTI]

    Wu, Junqiao

    .1063/1.3499753 Semiconductor alloying is a common method for tailor- ing material properties for specific applicationsGaN1-xBix: Extremely mismatched semiconductor alloys A. X. Levander,1,2 K. M. Yu,1,a S. V. Novikov,3 A. Tseng,1,2 C. T. Foxon,3 O. D. Dubon,1,2 J. Wu,1,2 and W. Walukiewicz1 1 Materials Sciences

  8. Scanning Tunneling Microscopy and Surface Simulation of Zinc-Blende GaN(001) Intrinsic 4 Reconstruction: Linear Gallium Tetramers?

    E-Print Network [OSTI]

    Reconstruction: Linear Gallium Tetramers? Hamad A. AL-Brithen, Rong Yang, Muhammad B. Haider, Costel Constantin and occupied states, in agreement with surface simulations based on the 4 1 linear tetramer model the existence of linear Ga tetramers. DOI: PACS numbers: 68.35.Bs, 68.37.Ef, 73.20.At Based on both fundamental

  9. "Just to orient us," Dr. Eric Steig be-gan, "Arctic means bear. It is the place

    E-Print Network [OSTI]

    Hart, Gus

    packed the auditorium to capacity to hear Steig discuss his re- search on climate change and Steig, raising waves across the scien- tific community. He is the director of the Quaternary Research Center is ocean and the other is land. The Arctic is covered in sea ice." Data measuring levels of Arctic sea ice

  10. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    E-Print Network [OSTI]

    Yu, K. M.

    2010-01-01

    makes the fabrication of multijunction cells simple and costhigh efficiency multijunction solar cells [37,38] using a

  11. Simulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    Technology Vamsi Paidi, Shouxuan Xie, Robert Coffie, Umesh K Mishra, Stephen Long, M J W Rodwell Department intermodulation product (IMD3) performance when biased close to the pinch-off voltage. I. Introduction

  12. Understanding Online Malicious Behavior: Social Malware and Email Spam

    E-Print Network [OSTI]

    Huang, Ting-Kai

    2013-01-01

    Czech Republic France Turkey Germany Germany Ukraine UkraineGermany Korea Ukraine Argentina Venezuela Colombia Turkey

  13. Bernhard Grimm, Humboldt University, Berlin, Germany; Robert J. Porra, CSIRO Plant Industry, Canberra, ACT, Australia; Wolfhart Rdiger, Mnchen University, Mnchen, Germany; Hugo

    E-Print Network [OSTI]

    Govindjee "Gov"

    the perfection of the chlorophylls is the central theme of this book. In today's energy hungry world with renewed interest in solar energy, this collection on the chlorophylls is most timely, covering the latest aspects energy trapping and conversion becomes an intriguing possibility. These applications will go far beyond

  14. Efficient Probabilistic Model Based Approaches for Analysis of Human Genomic Data

    E-Print Network [OSTI]

    Yang, Wenyun

    2013-01-01

    Russia Ukraine Germany France Turkey France Romania GreeceRussia Ukraine Germany France Turkey Germany Romania GreeceRussia Russia Ukraine Germany France Turkey Germany Romania

  15. Combined Retrieval, Microphysical Retrievals and Heating Rates

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Feng, Zhe

    2013-02-22

    Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

  16. Combined Retrieval, Microphysical Retrievals and Heating Rates

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Feng, Zhe

    Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

  17. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  18. 1995U.s. EPA Symposi1m1on GreenhouseGasEmissionsandMitigation ResearchWashington.DC, 27-29June1995 . COSTVERSUSSCALE FORADVANCED

    E-Print Network [OSTI]

    -competitivenesswith fossil fuel systems,while substantiallyreducingemissionsof Co,. to theatmosphere[Hall, et aI., 1991. This paperexaminesthe effectsof scaleon theprospectivecostsof producingelectricity and alcohol fuels from plantationUion/yearto keeperodiblelandsout of productionundertheConservationReserveProgram (CRP). In addition,price

  19. Decontamination of hot cells K-1, K-3, M-1, M-3, and A-1, M-Wing, Building 200: Project final report Argonne National Laboratory-East

    SciTech Connect (OSTI)

    Cheever, C.L.; Rose, R.W.

    1996-09-01

    The purpose of this project was to remove radioactively contaminated materials and equipment from the hot cells, to decontaminate the hot cells, and to dispose of the radioactive waste. The goal was to reduce stack releases of Rn-220 and to place the hot cells in an emptied, decontaminated condition with less than 10 {micro}Sv/h (1 mrem/h) general radiation background. The following actions were needed: organize and mobilize a decontamination team; prepare decontamination plans and procedures; perform safety analyses to ensure protection of the workers, public, and environment; remotely size-reduce, package, and remove radioactive materials and equipment for waste disposal; remotely decontaminate surfaces to reduce hot cell radiation background levels to allow personnel entries using supplied air and full protective suits; disassemble and package the remaining radioactive materials and equipment using hands-on techniques; decontaminate hot cell surfaces to remove loose radioactive contaminants and to attain a less than 10 {micro}Sv/h (1 mrem/h) general background level; document and dispose of the radioactive and mixed waste; and conduct a final radiological survey.

  20. A Naturally Occurring Mutation in ropB Suppresses SpeB Expression and Reduces M1T1 Group A Streptococcal

    E-Print Network [OSTI]

    Nizet, Victor

    University, Cairo, Egypt, 3 The VA Hospital, Memphis, Tennessee, United States of America, 4 The Department Epidemiological studies of group A streptococcus (GAS) have noted an inverse relationship between SpeB expression show that an intact RopB and efficient SpeB production are necessary for systemic infection with GAS

  1. Ultra-Deep Hubble Space Telescope Imaging of the Small Magellanic Cloud: The Initial Mass Function of Stars with M <~ 1 Msun

    E-Print Network [OSTI]

    Kalirai, Jason S; Dotter, Aaron; Richer, Harvey B; Fahlman, Gregory G; Hansen, Brad M S; Hurley, Jarrod; Reid, I Neill; Rich, R Michael; Shara, Michael M

    2012-01-01

    We present a new measurement of the stellar initial mass function (IMF) based on ultra-deep, high-resolution photometry of >5,000 stars in the outskirts of the Small Magellanic Cloud (SMC) galaxy. The Hubble Space Telescope (HST) Advanced Camera for Surveys (ACS) observations reveal this rich, co-spatial population behind the foreground globular cluster 47 Tuc, which we targeted for 121 HST orbits. The stellar main sequence of the SMC is measured in the F606W, F814W color-magnitude diagram (CMD) down to ~30th magnitude, and is cleanly separated from the foreground star cluster population using proper motions. We simulate the SMC population by extracting stellar masses (single and unresolved binaries) from specific IMFs, and converting those masses to luminosities in our bandpasses. The corresponding photometry for these simulated stars is drawn directly from a rich cloud of 4 million artificial stars, thereby accounting for the real photometric scatter and completeness of the data. Over a continuous and well ...

  2. 29.01.03.M1.27 Exclusions from Required Risk Mitigation Measures Page 1 of 3 STANDARD ADMINISTRATIVE PROCEDURE

    E-Print Network [OSTI]

    Administrative Procedure Statement All owners and custodians of information technology resources are expected of a requested exclusion to an information technology rules or SAP. Definitions Information Resource Owner or department, or by the Associate Vice President for Information Technology & Chief Information Officer

  3. The effect of cigarette smoke and arsenic exposure on urothelial carcinoma risk is modified by glutathione S-transferase M1 gene null genotype

    SciTech Connect (OSTI)

    Chung, Chi-Jung [Department of Health Risk Management, College of Public Health, China Medical University, Taichung, Taiwan (China) [Department of Health Risk Management, College of Public Health, China Medical University, Taichung, Taiwan (China); Department of Medical Research, China Medical University Hospital, Taichung, Taiwan (China); Huang, Chao-Yuan; Pu, Yeong-Shiau [Department of Urology, National Taiwan University Hospital, Taipei, Taiwan (China)] [Department of Urology, National Taiwan University Hospital, Taipei, Taiwan (China); Shiue, Horng-Sheng [Department of Chinese Medicine, Chang Gung Memorial Hospital, Taipei, Taiwan (China)] [Department of Chinese Medicine, Chang Gung Memorial Hospital, Taipei, Taiwan (China); Su, Chien-Tien [Department of Family Medicine, Taipei Medical University Hospital, Taipei, Taiwan (China)] [Department of Family Medicine, Taipei Medical University Hospital, Taipei, Taiwan (China); Hsueh, Yu-Mei, E-mail: ymhsueh@tmu.edu.tw [Department of Public Health, School of Medicine, College of Medicine, Taipei Medical University, Taipei, Taiwan (China) [Department of Public Health, School of Medicine, College of Medicine, Taipei Medical University, Taipei, Taiwan (China); School of Public Health, College of Public Health and Nutrition, Taipei Medical University, Taipei, Taiwan (China)

    2013-01-15

    Inter-individual variation in the metabolism of xenobiotics, caused by factors such as cigarette smoking or inorganic arsenic exposure, is hypothesized to be a susceptibility factor for urothelial carcinoma (UC). Therefore, our study aimed to evaluate the role of gene–environment interaction in the carcinogenesis of UC. A hospital-based case–control study was conducted. Urinary arsenic profiles were measured using high-performance liquid chromatography–hydride generator-atomic absorption spectrometry. Genotyping was performed using a polymerase chain reaction-restriction fragment length polymorphism technique. Information about cigarette smoking exposure was acquired from a lifestyle questionnaire. Multivariate logistic regression was applied to estimate the UC risk associated with certain risk factors. We found that UC patients had higher urinary levels of total arsenic, higher percentages of inorganic arsenic (InAs%) and monomethylarsonic acid (MMA%) and lower percentages of dimethylarsinic acid (DMA%) compared to controls. Subjects carrying the GSTM1 null genotype had significantly increased UC risk. However, no association was observed between gene polymorphisms of CYP1A1, EPHX1, SULT1A1 and GSTT1 and UC risk after adjustment for age and sex. Significant gene–environment interactions among urinary arsenic profile, cigarette smoking, and GSTM1 wild/null polymorphism and UC risk were observed after adjustment for potential risk factors. Overall, gene–environment interactions simultaneously played an important role in UC carcinogenesis. In the future, large-scale studies should be conducted using tag-SNPs of xenobiotic-metabolism-related enzymes for gene determination. -- Highlights: ? Subjects with GSTM1 null genotype had significantly increased UC risk. ? UC patients had poor arsenic metabolic ability compared to controls. ? GSTM1 null genotype may modify arsenic related UC risk.

  4. Climate change effects on winter chill for fruit crops in Germany

    E-Print Network [OSTI]

    Luedeling, Eike; Blanke, Michael; Gebauer, Jens

    2009-01-01

    Stunden (engl. Growing Degree Hours) stellt sich heraus,chill unit and growing degree hour accu- mulator. Acta Hort

  5. LIBERALIZING THE ACADEMY: The Transformation Of Higher Education In the United States And Germany*

    E-Print Network [OSTI]

    Schulze-Cleven, Tobias

    2015-01-01

    Change in Higher Education. ” World Politics 60(January):Science and the Study of Education. ” British Journal ofR. 1983. The Higher Education System. Academic Organization

  6. The 32nd International Electric Propulsion Conference, Wiesbaden, Germany September 11 15, 2011

    E-Print Network [OSTI]

    King, Lyon B.

    efficiency of 31%. Relatively low efficiency is attribute non-optimum magnetic field and low flow rates. Nomenclature = open area of anode face Id = discharge current M = atomic mass = mass flow rate = discharge into the discharge chamber. This method of direct evaporation utilized the waste heat from the plasma discharge

  7. The Role of the Green Party in Germany's Renewable Energy Policy

    E-Print Network [OSTI]

    New Hampshire, University of

    Programs and other Research and Development Funding -includes the 100,000 Roof Solar Program -increased facility safety Early Renewable Influence 100 mW Wind (1989) 100 Roof Solar Program (1989) #12 Phase- Out Act Emission Trading Act Eco-tax and 100,000 Roof Program Early wind and solar programs

  8. Miocene honey bees from the Randeck Maar of southwestern Germany (Hymenoptera, Apidae)

    E-Print Network [OSTI]

    Ulrich, Kotthoff; Wappler, Torsten; Engel, Michael S.

    2011-03-10

    of setal bands on the metasoma, length of the proboscis, sternal and leg podite proportions, the presence or absence of a distal abscissa to M in the hind wing (absent in A. mellifera), structure of the drone legs and endophallus, and behavioral aspects... such as the time of drone mat- ing flights, structure of brood cell caps, or the position of a worker while wing-flapping in front of the hive (e.g., Ruttner 1988; Verma et al. 1994; Hadisoesilo and Otis 1996, 1998; Damus and Otis 1997; Sheppard et al. 1997...

  9. Foreign Travel Report - West Germany and Belgium - September 9 - September 13, 1985

    SciTech Connect (OSTI)

    Bickford, D.F.

    2001-05-17

    This report discusses visitation of the PAMELA plant which provided an opportunity to observe the operation and design of this European waste solidification facility. The aim of the workshop was to exchange expertise relative to the safe vitrification of HLLW in order to determine which areas were technologically solved and which areas required further study.

  10. ESF / VHREM Workshop, 22-23 September 2006 at the University of Hohenheim, Stuttgart, Germany

    E-Print Network [OSTI]

    Gohm, Alexander

    · Case study of a bora event · Case study of a wintertime air pollution event · Conclusions Outline Case backscatter lidar observations Case study of a wintertime air pollution event: Investigation of the role study of a bora event · Case study of a wintertime air pollution event · Conclusions RAMS model domain 5

  11. International Radar Symposium, Dresden/ Germany, Sept 30 Oct 2, 2003. APPROACH FOR PROTECTION

    E-Print Network [OSTI]

    Gavrila, Dariu M.

    (5) ; Morris, Richard(6) (1) Volkswagen AG - Research Electronic Systems/ Driver Assistance Electronics - K-EFE/F - Brieffach 1776 - 38436 Wolfsburg/ Ger- many, e-mail: marc-michael.meinecke@volkswagen.de, Marianandrzej.obojski@volkswagen.de, (2) SiemensVDO Automotive AG - SV SC RS TG - Osterhofener Strasse 19

  12. *Zentrum fr Molekulare Neurobiologie Hamburg, Universittsklinikum Hamburg-Eppendorf, Hamburg, Germany

    E-Print Network [OSTI]

    the intercellular space generating permissive conditions for cell motility. PSA enhances stem cell migration outgrowth of cultured primary neurons and process formation of Schwann cells, protects neurons from oxidative stress, reduces migration of astrocytes and enhances myelination in vitro. Furthermore

  13. A culture of appropriation : strategies of temporary reuse in East Germany

    E-Print Network [OSTI]

    Heinemann, Michaela

    2005-01-01

    This thesis examines the possibilities of creative appropriation of existing spaces. It defines interstitial practices as both critical and imaginative forces that actively participate in the production of social space. ...

  14. Tax Morale after the Reunification of Germany: Results from a Quasi-Natural Experiment

    E-Print Network [OSTI]

    Feld, Lars P.; Torgler, Benno

    2007-01-01

    über das Steuersystem der DDR,“ DStR – Zeitschrift für dasSteuer- und Abgabensystem der DDR im Übergang von der Plan-

  15. Making and Unmaking Money: Economic Planning and the Collapse of East Germany

    E-Print Network [OSTI]

    Zatlin, Jonathan R

    2007-01-01

    socialists had. See Werner Obst, DDR-Wirtschaft. Modell undökonomischen Entwicklung der DDR,” pp. 16-7, and Anlage 6, “and Konrad Wetzker, Schlußbilanz-DDR. Fazit einer verfehlten

  16. Britain's exploitation of Occupied Germany for scientific and technical intelligence on the Soviet Union

    E-Print Network [OSTI]

    Maddrell, John Paul

    1999-01-26

    (British Element) Dipl. Ing. (or Ing.): Diplom-Ingenieur (which is the German way of indicating the possession of a bachelor's degree in engineering) D.At.En.lD.At.En.Int.: Division (previously Department) of Atomic Energy of the Ministry of Supply (its... intelligence unit was known as 'D.At.En.Int. ' , but was often known simply as 'D.At.En.' and will be referred to by that name in this thesis) DDR: Deutsche Demokratische Republik (German Democratic Republic) DPs: Displaced Persons ELINT: electronic...

  17. CAD as a tool in urban design : a study in reunited Germany

    E-Print Network [OSTI]

    Jurkschat, Axel (Axel R. M.)

    1995-01-01

    Architecture is a phenomenon of space and time. Since ancient times mankind has found its place in space and time with the help of architecture. Thus architecture refers to more than just practical requirements, science ...

  18. The legal status of UF{sub 6}-cylinder testing and licensing in Germany (and Europe)

    SciTech Connect (OSTI)

    Wieser, K.E. [Federal Institute for Material Research and Testing (BAM), Berlin (Germany); Tietze, A. [Bergische Universitaet - Gesamthochschule Wuppertal (Germany)

    1991-12-31

    New German and European transport regulations for road and rail transport of UF{sub 6}-cylinders are presented, in particular those provisions which have direct impact on the majority of cylinders used in shipments touching ADR and RID member states. First experiences and difficulties in it`s application are highlighted taking into account experiences of a for running German regulation. A summary of research efforts on the behaviour of cylinders in fire environments concludes the paper.

  19. Impacts of high energy prices on long-term energy-economic scenarios for Germany

    E-Print Network [OSTI]

    with current allocation rules in the emissions trading scheme, the CO2 emissions decrease relatively steadily (especially lignite). In the case of the implementation of an ideal emissions trading scheme with full

  20. At the Nexus of Social Policy and Capital Markets: Pension Reform and Enterprise Governance in Germany

    E-Print Network [OSTI]

    Ziegler, J. Nicholas

    2008-01-01

    huge new market for asset-management services. According toWith regard to asset management – the heart of most conceptsit outsourced the asset management function to the pillar of

  1. Contested seascapes : space-related conflicts over offshore wind farms in Scotland and Germany 

    E-Print Network [OSTI]

    Rudolph, David Philipp

    2013-11-28

    Offshore wind farms are widely considered to become a cornerstone of energy transition for securing energy supply and tackling climate change simultaneously. But recent developments have demonstrated that the siting of ...

  2. LEHR-UND FORSCHUNGSGEBIET INFORMATIK II RWTH Aachen D-52056 Aachen GERMANY

    E-Print Network [OSTI]

    Ábrahám, Erika

    looks like [Int]. Exercise 2 (1 point) The data structures Operator and T erm are de#12;ned as follows: data Operator = Add j Mult data T erm = Const F loat j V ar String j BOp Operator T erm T erm De#12;ne the data structure T erm as an instance of the classes Eq; Ord and Show with methods analogous to exercise

  3. University of Ulm | 89069 Ulm | Germany Faculty of Engineering and Com-

    E-Print Network [OSTI]

    Ulm, Universität

    Reality Bachelor thesis of the University of Ulm Presented by: Tamino P.S.M. Hartmann tamino.hartmann 2013 Tamino P.S.M. Hartmann This work is licensed under the Creative Commons. Attribution parents, Stefan and Katja Hartmann, for proof-reading the text of this paper and his friends

  4. Spring 2012 Ger 3501: Contemporary Germany "Environmental Debates--Food, Energy, Politics"

    E-Print Network [OSTI]

    Amin, S. Massoud

    Spring 2012 that have been created by students in participating German, French, and Spanish courses of German, Scandinavian and Dutch; Department of French and Italian; Department of Spanish and Portuguese

  5. International Conference on Wood-based Bioenergy LIGNA+Hannover, Germany, 17-18 May 2007

    E-Print Network [OSTI]

    1985 1990 1995 2000 2005 2010 2015 2020 Year Amount(inmillioncubicmetresWRME) Recovered paper Net pulp fossil fuel prices · Energy security · Policies to reduce climate change · Wood industries' wood needs consumption, e.g. China ­ Nuclear safety #12;International Conference on Wood-based Bioenergy LIGNA

  6. Communist coalmining union activists and postwar reconstruction, 1945-52: Germany, Poland, and Britain

    SciTech Connect (OSTI)

    Fishman, N.; Prazmowska, A.J.; Heith, H. [University of Westminster, London (United Kingdom)

    2006-01-15

    The demand for coal in war-torn Europe after VE Day gave coalmining trade unions unprecedented bargaining leverage. Miners' incomes had been depressed throughout the interwar period, and they were now anxious to recover their past high wages and improve their conditions. In several key European countries, Communists were prominent among the leadership of mining trade unions. Communist miners' leaders Willi Agatz, Edward Gierek and Arthur Horner each faced unprecedented opportunities and challenges at the onset of the Cold War in 1948, as they sought to fuse their parallel identities as committed and influential Communists and as conscientious trade union negotiators in these newly advantageous circumstances. Each of these three 'revolutionary' trade unionists pursued strategies that revived the position of miners, without undermining the potential for economic recovery in their respective countries - for which an uninterrupted supply of coal remained critical. A comparative study of the personal and political experiences of the three Communist miners' leaders enhances our understanding of the evolution of Communist trade unionism in the early postwar period.

  7. Apprentice pay in Britain, Germany, and Switzerland: institutions, market forces and market power

    E-Print Network [OSTI]

    Ryan, Paul; Backes-Gellner, Uschi; Teuber, Silvia; Wagner, Karin

    2013-07-29

    union representation at the workplace, companies can in effect determine this for themselves (ASM, 2006). Moreover, though apprentice pay was covered by collective bargaining in all seven German plants covered by a collective agreement...

  8. KonradZuseZentrum fur Informationstechnik Berlin Heilbronner Str. 10, D10711 BerlinWilmersdorf, Germany

    E-Print Network [OSTI]

    Borndörfer, Ralf

    , containers are of sizes 1 and 2 and location capacities vary from 1 to 3, i.e. s : S ! f1; 2g and c : C ! f1, On leave from Department of Engineering Mathematics & Physics, Cairo University, Egypt y Konrad Zuse

  9. An Analysis of Residential PV System Price Differences Between the United States and Germany

    E-Print Network [OSTI]

    Seel, Joachim

    2014-01-01

    A levelized cost of electricity (LCoE) analysis based on thePV system prices could reduce LCoE assumptions: 25-year life

  10. Equilibrium polymerization of cyclic carbonate oligomers Institut fur Festkorperforschung, Forschungszentrum Julich, D-52425 Julich, Germany

    E-Print Network [OSTI]

    of the polymerization of ring oligomers of bisphenol A polycarbonate BPA-PC is used to investigate the influence of bisphenol carbonate cyclic oligomers, which can be used to produce high molecular weight polycarbonate

  11. In 1925, the Meteor expedition set out from Germany to measure the ocean's

    E-Print Network [OSTI]

    Levin, Lisa

    and peer sideways to look through a port- hole. The vehicle's exterior lights, though powerful, illuminated, Mexico, Peru, Chile and Oman. Using data on seafloor topog- raphy and oxygen measurements from

  12. TOWARDS FAST-PULSED SUPERCONDUCTING SYNCHROTRON G. Moritz, C. Muehle, GSI, Darmstadt, Germany

    E-Print Network [OSTI]

    Ohta, Shigemi

    , UK Work supported in part by U. S. Department of Energy under contract No. DE-AC02-98CH10886 Abstract been operated with 4 T/s at a maximum field of 2 Tesla, shall be developed to reduce heat losses accelerator expansion is a dual-ring synchrotron in one tunnel with maximum rigidities of 100 and 200 Tm

  13. Release and disposal of materials during decommissioning of Siemens MOX fuel fabrication plant at Hanau, Germany

    SciTech Connect (OSTI)

    Koenig, Werner; Baumann, Roland

    2007-07-01

    In September 2006, decommissioning and dismantling of the Siemens MOX Fuel Fabrication Plant in Hanau were completed. The process equipment and the fabrication buildings were completely decommissioned and dismantled. The other buildings were emptied in whole or in part, although they were not demolished. Overall, the decommissioning process produced approximately 8500 Mg of radioactive waste (including inactive matrix material); clearance measurements were also performed for approximately 5400 Mg of material covering a wide range of types. All the equipment in which nuclear fuels had been handled was disposed of as radioactive waste. The radioactive waste was conditioned on the basis of the requirements specified for the projected German final disposal site 'Schachtanlage Konrad'. During the pre-conditioning, familiar processes such as incineration, compacting and melting were used. It has been shown that on account of consistently applied activity containment (barrier concept) during operation and dismantling, there has been no significant unexpected contamination of the plant. Therefore almost all the materials that were not a priori destined for radioactive waste were released without restriction on the basis of the applicable legal regulations (chap. 29 of the Radiation Protection Ordinance), along with the buildings and the plant site. (authors)

  14. Analysis Strategies for Software Product Lines THOMAS THUM, University of Magdeburg, Germany,

    E-Print Network [OSTI]

    Kaestner, Christian

    and institutions such as NASA, Hewlett Packard, General Motors, Boeing, Nokia, and Philips apply product, including embedded, automotive, and avionic systems [Weiss 2008]. Hence, proper analysis methods

  15. At the Nexus of Social Policy and Capital Markets: Pension Reform and Enterprise Governance in Germany

    E-Print Network [OSTI]

    Ziegler, J. Nicholas

    2008-01-01

    through Pay-As-You-Go (PAYGO) payroll deductions that restedbenefits from the statutory PAYGO system at unsustainableage benefits from the statutory PAYGO system to some kind of

  16. R E S U M E Renewable Energy for Sustainable Development of Indonesia and Germany

    E-Print Network [OSTI]

    Peinke, Joachim

    deliver nearly 7 percent of the cuts called for by the Intergovernmental Panel on Climate Change (IPCC conservation, improving energy efficiency and encouraging development of variety clean energy sources be it solar, biomass, and hydro. This event is also expected to encourage dialogue among stakeholders, nations

  17. Times of the Event: On the Aesthetico-Political in West Germany and Austria circa 1968

    E-Print Network [OSTI]

    Weiner, Andrew Stefan

    2011-01-01

    eds. Happenings: Fluxus. Pop Art. Nouveau Réalisme. Eine1966. Dienst, Rolf-Gunter. Pop Art. Wiesbaden: Limes, 1965.eds. Happenings: Fluxus. Pop Art. Nouveau Réalisme. Eine

  18. temperature and humidity near ground level at 25 sites in Switzerland and 8 in Germany,

    E-Print Network [OSTI]

    of nitrous oxide to free nitrogen gas and oxygen atoms, which end up bound to its surface. These atoms in mutants that did not make these RNAs. NANOTECHNOLOGY Thefineprint Nature Nanotechnol. doi:10.1038/nnano `illuminated' the arrangement of these gas molecules, and where extra information was stored

  19. Aerial photographic monitoring of spruce damage in Bayerischer Wald National Park, Federal Republic of Germany 

    E-Print Network [OSTI]

    Goebel, John Martin

    1989-01-01

    with a lens with a focal length of 305mm. In 1981 a Zeiss D filter (dark orange) was attached while in 1983 this was replaced with a Wzatten 12 filter (yellow or "minus 'Ihe reader should routinely refer to Appends A ? Ehotogzapbs for visual.... interpose(mtion keys and phot' b. graduated sample plot template c. Wild Heerbrugg Type 392824 dual view stereoscope d. ~ff 2050 electrical counting machine e. data entry (tally) sheets (one per plat) Beginning with the 1981 photo set and utilizing...

  20. Copyright WILEYVCH Verlag GmbH & Co. KGaA, 69469 Weinheim, Germany, 2014. Supporting Information

    E-Print Network [OSTI]

    Wang, Xudong

    , Yanhao Yu, Zhiyong Cai,* Xudong Wang * Figure S1. XRD spectrum of fibrous TiO2 nanotubes after annealing obtained as 8.241012 (cm-2 ) and 3.431012 (cm-2 ). In our experiments, the thickness of the TiO2 nanotube system and in the two PEC setups, the TiO2 nanotube photoanodes did not change. Thus, the calculated

  1. SOCIO-8TRUCTURAL ANALYSIS OF IMMIGRANT WORKER MINORITIES: THE CASE OF 'WEST-GERMANY

    E-Print Network [OSTI]

    Heckmann, Friedrich

    1980-04-01

    and foundries are representative of this type of work, where up to .90 .percent of the workers are immigrants. In addition, work done byimm.igrants has been shown to be more prone to accidents (cf. Mehrlander, 1969:69).1 S Two major economic crises have occurred... positionof thewife-~~r~ than 60 percent of married women among the' foreign .worker$ population are employed-sand due to the. learning of more: inde­ pendent behavior patterns in the immigration so.ciety.· The majority of the foreign. workers' children...

  2. The Cutting Edge of Modernity: Machine Tools in the United States and Germany 1930-1945

    E-Print Network [OSTI]

    Ristuccia, Cristiano A.; Tooze, J. Adam

    2004-06-16

    and that for December 1933.16 15 From 1930 the inventories also provided an increasing coverage on auxiliary metal-working plant equipment (heat treating, material handling, foundry equipment, finishing... into ovens), air compressors, oil extracting machines (from metal chips), parts washing machines, drying machines, pickling machines, tumbling barrels, sand blast equipment, spraying systems, portable welding outfits, portable tools (drills, grinders, power...

  3. Alberto Bernacchia a.bernacchia@gmail.com, Campus Ring 1, Bremen 28759, Germany

    E-Print Network [OSTI]

    Bernacchia, Alberto

    : Application to El Nino. Nonlinear Processes in Geophysics, 15:169-177. 2008 · Bernacchia A, Naveau P (2008

  4. Tube foot preservation in the Devonian crinoid Codiacrinus from the Lower Devonian Hunsruck Slate, Germany

    E-Print Network [OSTI]

    Kammer, Thomas

    Mall Columbus 43210, OH, USA; Christoph Bartels [Chris- toph.Bartels@bergbaumuseum.de], German Mining are introduced and with pressure hoses that limit static electricity. With this modified devise, pure iron

  5. Adaptive modeling of biochemical pathways J.W.G.University, Frankfurt, Germany

    E-Print Network [OSTI]

    Brause, R.

    shock. The symptoms of septic shock contain low blood pressure, high ventilation and high heart rates no convincing results yet; there is still a high mortality of about 50% on the intensive care units (ICU, see [3] . In 1999, about 250,000 deaths were associated with sepsis in the USA. A confusing myriad

  6. Model selection and adaptation for biochemical pathways J.W.G.-University, 60054 Frankfurt, Germany

    E-Print Network [OSTI]

    Brause, R.

    ventilation and high heart rates and may occur after an infection or a trauma (damage of tissue). The septic% on the intensive care units (ICU) and nobody knows why. It is only possible to predict the outcome for a patient in advance just for 3 days, see [5] . In 1999, about 250,000 death were associated with sepsis in the USA

  7. Front speed enhancement in cellular flows Institute of Physics, Potsdam University, 14415 Potsdam, Germany

    E-Print Network [OSTI]

    Cencini, Massimo

    .g., in combustion. However, many features can be understood by neglecting the back-reaction on the velocity field flows in three different regimes: slow reaction, fast reaction and geometrical optics limit. It is well speed as a function of the stirring intensity, U. For slow reaction, the front propagates with a speed

  8. International monetary relations between the United States, France, and West Germany in the 1970s 

    E-Print Network [OSTI]

    Rae, Michelle Frasher

    2004-09-30

    the globe. Designed to correct the inadequacies of the gold standard, it provided institutions for the exchange ideas and problem-solving and standardized guidelines to manage trade and commerce in a growing and interdependent world. For thirty years... Woods tied the U.S. dollar to gold at a set rate of $35 an ounce, members chose to keep dollars instead of gold bars in their reserves, and pegged exchange rates to the strength of the dollar and the U.S. economy. As long as the US held enough gold...

  9. ‘All one could desire’ British women remember life in post war Germany

    E-Print Network [OSTI]

    Easingwood, Ruth

    2007-01-01

    correlates to the work of Penny Summerfield who during thespeaking for themselves’ as Penny Summerfield puts it, is anof women’s voices but Penny Summerfield argues that how

  10. WeST Web Science & Technologies University of Koblenz Landau, Germany

    E-Print Network [OSTI]

    Staab, Steffen

    ... Zyström 981 ...a short history of the Web... HTML> Aalta Interests... Phone 789HTML> Zyström Colleague of the Web continued... Phone Book CERN Aalta 789 ... Zyström 981 HTML> Aalta Interests... Tel 789HTMLST ­ Web Science & Technologies ...now you can read it more easily... HTML> HTML> What a computer

  11. EEnergy Project "MeRegio" (Smart Grid Project) (Ettenheim, Germany) | Open

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsAreaforInformation ECr TechnologiesEERE - EnergyEnergy

  12. EEnergy Project "MeRegio" (Smart Grid Project) (Freiamt, Germany) | Open

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsAreaforInformation ECr TechnologiesEERE -

  13. Microsoft Word - MOU Between DOE and Germany 9-15-11.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on77 PAGE OF PAGESpersonal CERTIFIEDPUB-3140September0 3.Impact ofFOR

  14. EDeMa (Smart Grid Project) (Krefeld, Germany) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of the NationalDynetek Europe GmbHED F Man (Krefeld,

  15. Panel 1, Towards Sustainable Energy Systems: The Role of Large-Scale Hydrogen Storage in Germany

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrder 422.1, CONDUCT P - .EnergyHYDROGEN ENERGY STORAGEHanno

  16. Assessment and Methods for Supply-Following Loads in Modern Electricity Grids with Deep Renewables Penetration

    E-Print Network [OSTI]

    Taneja, Jayant Kumar

    2013-01-01

    45] Der Spiegel. Germany’s Energy Poverty: How ElectricityGermany – Monthly proportion of annual energy contributionsources. EEX - Germany The European Energy Exchange (EEX)

  17. PHYSICAL REVIEW B 83, 165407 (2011) Two-dimensional Mn structure on the GaN growth surface and evidence for room-temperature

    E-Print Network [OSTI]

    2011-01-01

    Nanotecnolog´ia, Universidad Nacional Aut´onoma de M´exico, Apartado Postal 14, Ensenada Baja California

  18. 90.6% efficient 11MHz 22W LED driver using GaN FETs and burst-mode controller with 0.96 power factor

    E-Print Network [OSTI]

    Chandrakasan, Anantha P.

    With the advent of reliable, high brightness and high efficacy LEDs, the lighting industry is expected to see a significant growth in the near future. However, for LEDs to completely replace the traditional incandescent ...

  19. A Web-Based Platform for Experimental Investigation of Electric Power Auctions Ray D. Zimmerman Robert J. Thomas Deqiang Gan Carlos Murillo-Snchez

    E-Print Network [OSTI]

    electric power markets. The unit commitment problem remains untouched in experimental testing except1 A Web-Based Platform for Experimental Investigation of Electric Power Auctions Ray D. Zimmerman@ee.cornell.edu cem14@cornell.edu School of Electrical Engineering, Cornell University, Ithaca, NY 14853 Abstract

  20. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 15, NO. 7, JULY 2005 463 A GaN Differential Oscillator With Improved

    E-Print Network [OSTI]

    York, Robert A.

    reported for devices [1], as well as for MMIC amplifiers [2]. A larger voltage across the tank of an os to connect directly to a differential input, such as a balanced mixer in an integrated circuit system per- formance. A design with a fixed tank and without a tail cur- rent source was chosen to help

  1. 3.3 PUBLICATIONS Gan, Z.,W. Wong and J. J. Liou, Semiconductor Process Reliability in Practice, McGraw-Hill,

    E-Print Network [OSTI]

    Pattanaik, Sumanta N.

    . Kutkut, Z.J. Shen and I. Batarseh, "Distributed Battery Micro-storage Systems Design and Operation power- of-two coefficients," Signal Processing, Vol. 92, No. 12, 2012, pp. 2866-2873. 3. Cheng, H. T., S, "Vehicle to Grid Services, Potentials, and Applications," Energies, Vol.5. 2012, pp. 4076-4090. 6. Faiz, J

  2. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  3. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  4. Journal of Crystal Growth 310 (2008) 23202325 Self-assembled InGaN quantum dots on GaN emitting at 520 nm grown

    E-Print Network [OSTI]

    Gilchrist, James F.

    2008-01-01

    -based blue­green­red LEDs will result in energy-efficient and low-cost approach for the white-light LEDs as the active media for light-emitting diodes (LEDs) and semiconductor laser diodes for green emission. r 2008-emitting diodes (LEDs) to excite the yellow-green and red phosphors, thus resulting in broadband visible white

  5. Importance of excitonic effects and the question of internal electric fields in stacking faults and crystal phase quantum discs: The model-case of GaN

    E-Print Network [OSTI]

    Corfdir, Pierre; Lefebvre, Pierre

    2012-01-01

    are the electron and hole on-axis positions and the in-plane relative coordinate of the exciton, respectively. We assume that the dielectric constant e¼ 9.5e0 is the same in the ZB and WZ layers of the structure.17 me¼ 0.2m018 and mh are the electron and hole... ). 21C. Stampfl and C. G. Van de Walle, Phys. Rev. B 57, R15052 (1998). 22A. Bellabchara, P. Lefebvre, P. Christol, and H. Mathieu, Phys. Rev. B 50, 11840 (1994). 23F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997). 24J...

  6. Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates

    E-Print Network [OSTI]

    Corfdir, Pierre; Dussaigne, Amélie; Teisseyre, Henryk; Suski, Tadeusz; Grzegory, Izabella; Lefebvre, Pierre; Giraud, Etienne; Shahmohammadi, Mehran; Phillips, Richard; Ganière, Jean-Daniel; Grandjean, Nicolas; Deveaud, Benoît

    -Daniel Ganiere1, Nicolas Grandjean1, and Beno?ˆt Deveaud1 1Institute of Condensed Matter Physics, Ecole Polytechnique Fe´de´rale de Lausanne, 1015 Lausanne, Switzerland 2Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, United Kingdom 3Institute... of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland 4Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland 5CNRS, Laboratoire Charles Coulomb, UMR5221, 34095 Montpellier, France E-mail: pmc53@cam.ac.uk Received...

  7. A COMPUTATIONAL ANALYSIS OF THE OPTIMAL POWER FLOW PROBLEM Baha Alzalg, Catalina Anghel, Wenying Gan, Qing Huang, Mustazee Rahman, Alex Shum

    E-Print Network [OSTI]

    under these contingencies was exemplified by the blackout in the North American power grid during 2003. The reason for the blackout was a failure of only a handful of contingencies in the network [8

  8. LEDs on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A/cm2 and 100˚C

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURING OFFICE INDUSTRIALU.S. DepartmentJeanKeyLANL SustainableRoadway Lighting

  9. Electronic properties of gallium nitride nanowires

    E-Print Network [OSTI]

    Yoon, Joonah

    2008-01-01

    This thesis presents a systematic study of the electrical transport in GaN nanowires. Particularly, the effect of the surrounding dielectric on the conductivity of GaN nanowires is experimentally shown for the first time. ...

  10. Science Highlights 2005

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 Photo: Gan Molecules Defect-Driven Magnetism in Mn-doped GaN DECEMBER 12, 2005 Semiconductors doped with magnetic elements are candidates as room-temperature magnetic...

  11. October 30, 2013 Status of Opto-Board Production

    E-Print Network [OSTI]

    Gan, K. K.

    Pixel Week 1 October 30, 2013 K.K. Gan Status of Opto-Board Production K.K. Gan, R + 16 data links #12;Pixel Week 3 Production Status K.K. Gan nSQP B opto-boards production completed passed reception test at CERN IBL opto-boards production completed passed

  12. Uncertainties in the Value of Bill Savings from Behind-the-Meter, Residential Photovoltaic Systems: The Roles of Electricity Market Conditions, Retail Rate Design, and Net Metering

    E-Print Network [OSTI]

    Darghouth, Naim Richard

    2013-01-01

    on simulated electricity spot prices in Germany, using theelectricity generation on spot market prices in Germany.

  13. Quality management and perceptions of teamwork and safety climate in European hospitals.

    E-Print Network [OSTI]

    2015-01-01

    France, Germany, Poland, Portugal, Spain and Turkey. DetailsFrance Germany Poland Portugal Spain Turkey Teaching

  14. International Energy Agency Implementing Agreements and Annexes: A Guide for Building Technologies Program Managers

    E-Print Network [OSTI]

    Evans, Meredydd

    2008-01-01

    Finland, Germany, New Zealand, Netherlands, Sweden, Turkey,Germany, New Zealand, the Netherlands, Sweden, Turkey, and

  15. A Hidden Immigration: The Geography of Polish-Brazilian Cultural Identity

    E-Print Network [OSTI]

    Dvorak, Anna

    2013-01-01

    Powers (Germany, Austria-Hungary, and Turkey) had beengroups moved to Turkey, southern Germany, Italy, Belgium,

  16. Assessment of the Economic Potential of Microgrids for Reactive Power Supply

    E-Print Network [OSTI]

    Appen, Jan von

    2012-01-01

    of Renewable Energies, Darmstadt, Germany 2 LawrenceSolar Energy Conference (EU PVSEC 2009), Hamburg (Germany),

  17. CURRICULUM VITAE PERSONAL DATA

    E-Print Network [OSTI]

    Politi, Antonio

    (Germany), Bad Honnef (Germany), Dresden (Germany), Chennai (India), Santa Fe (USA), Palma de Mallorca (Spain), Budapest (Hungary), Heraklion (Greece), Rhodos&Mianmaris (Greece & Turkey), Trieste ICTP (Italy Research Center, University of Augsburg (Germany), Humboldt University (Berlin, Germany), University

  18. Beam diagnostics and beam handling systems; Proceedings of the Meeting, Hamburg, Federal Republic of Germany, Sept. 21, 22, 1988

    SciTech Connect (OSTI)

    Sona, A.

    1989-01-01

    Papers on beam diagnostics and beam handling systems are presented, including topics such as matrials processing with laser radiation, diagnostics of high-power laser beams, beam quality evaluation of a high power fast axial flow CO2 laser, diffractive devices in beam handling, and intensity profiling UV laser beams. Other topics include optical fiber Nd-YAG laser beam delivery systems, a flexible fiber cable for 1 kW CW YAG laser radiation transmission, an optical fiber multiplexer for industrial Nd:YAG lasers, linking laser and handling systems in multistation operation, a noncontact capacitive control system for laser cutting machines, and robotics for beam manipulations. Additional subjects include active optics for high power lasers, beam delivery and shaping on heat treating applications, optics for shaping and focusing industrial CO2 lasers, reshaping annular laser beams with conical reflectors, increasing the flexibility of beam integrating multifaceted mirrors, and the definition and use of the principal planes for Gaussian beams.

  19. Wegelerstrae 6 53115 Bonn Germany phone +49 228 73-3427 fax +49 228 73-7527

    E-Print Network [OSTI]

    Burstedde, Carsten

    been supported by the Basque Government (NANOMATERIALES and HIBRICEM projects), the Spanish Government

  20. Quantitative comparison between PGNAA measurements and MCNP calculations in view of the characterization of radioactive wastes in Germany and France

    SciTech Connect (OSTI)

    Mauerhofer, E.; Havenith, A.; Kettler, J.; Carasco, C.; Payan, E.; Ma, J. L.; Perot, B.

    2013-04-19

    The Forschungszentrum Juelich GmbH (FZJ), together with the Aachen University Rheinisch-Westfaelische Technische Hochschule (RWTH) and the French Alternative Energies and Atomic Energy Commission (CEA Cadarache) are involved in a cooperation aiming at characterizing toxic and reactive elements in radioactive waste packages by means of Prompt Gamma Neutron Activation Analysis (PGNAA). The French and German waste management agencies have indeed defined acceptability limits concerning these elements in view of their projected geological repositories. A first measurement campaign was performed in the new Prompt Gamma Neutron Activation Analysis (PGNAA) facility called MEDINA, at FZJ, to assess the capture gamma-ray signatures of some elements of interest in large samples up to waste drums with a volume of 200 liter. MEDINA is the acronym for Multi Element Detection based on Instrumental Neutron Activation. This paper presents MCNP calculations of the MEDINA facility and quantitative comparison between measurement and simulation. Passive gamma-ray spectra acquired with a high purity germanium detector and calibration sources are used to qualify the numerical model of the crystal. Active PGNAA spectra of a sodium chloride sample measured with MEDINA then allow for qualifying the global numerical model of the measurement cell. Chlorine indeed constitutes a usual reference with reliable capture gamma-ray production data. The goal is to characterize the entire simulation protocol (geometrical model, nuclear data, and postprocessing tools) which will be used for current measurement interpretation, extrapolation of the performances to other types of waste packages or other applications, as well as for the study of future PGNAA facilities.