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Sample records for germany gan m1

  1. Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Germany - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid Modernization Battery Testing Nuclear Fuel Cycle Defense Waste Management Programs Advanced Nuclear Energy

  2. M 1 Partners | Open Energy Information

    Open Energy Info (EERE)

    Partners Jump to: navigation, search Name: M-1 Partners Place: New York Product: M-1 Partners is a joint venture between Peter Marshall and Robert Ott with the objective of...

  3. Perseus (Germany) | Open Energy Information

    Open Energy Info (EERE)

    Perseus (Germany) Jump to: navigation, search Logo: Perseus (Germany) Name: Perseus (Germany) Address: Schumannstrasse 4 Place: Munich, Germany Zip: D-81679 Product: Private equity...

  4. Immosolar Germany | Open Energy Information

    Open Energy Info (EERE)

    Germany Jump to: navigation, search Logo: Immosolar Germany Name: Immosolar Germany Address: Valentinskamp 24 Place: Hamburg, Germany Sector: Solar Product: Solar energy systems...

  5. ARM - AMIE Gan Island - Data Plots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gan Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island Site (PDF, 2.0

  6. ARM - News from the Gan Island Deployment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB)...

  7. Enex Power Germany | Open Energy Information

    Open Energy Info (EERE)

    Power Germany Jump to: navigation, search Name: Enex Power Germany Place: Geretsried, Germany Sector: Geothermal energy Product: Germany-based subsidiary of Enex Power, developing...

  8. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  9. Observation of 690 MV m^-1 Electron Accelerating Gradient with...

    Office of Scientific and Technical Information (OSTI)

    Observation of 690 MV m-1 Electron Accelerating Gradient with a Laser-Driven Dielectric Microstructure Citation Details In-Document Search Title: Observation of 690 MV m-1...

  10. Greenpeace Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Greenpeace Energy Germany Jump to: navigation, search Name: Greenpeace Energy Germany Place: Hamburg, Germany Zip: 29357 Product: German sustainable energy provider Coordinates:...

  11. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  12. Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    276,000,000 Barrels (bbl) 54 2010 CIA World Factbook Energy Maps featuring Germany PV Solar Resource: U.S., Germany and Spain PV Solar Resource - US, Spain and Germany Germany...

  13. ARM - VAP Product - visstpx08m1rv4minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8m1rv4minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX08M1RV4MINNIS VISST-derived pixel-level products from satellite MTSAT, version 4 Active Dates 2008.05.01 - 2008.12.31 Originating VAP Process Minnis Cloud Products Using Visst Algorithm : VISST Measurements The measurements below provided by this

  14. Germany knows mining

    SciTech Connect (OSTI)

    2006-11-15

    Whether it is the nuance of precision or robust rock breaking strength, German suppliers have the expertise. Germany has about 120 companies in the mining equipment industry, employing some 16,000 people. The article describes some recent developments of the following companies: DBT, Liebherr, Atlas Copco, BASF, Boart Longyear, Eickhoff, IBS, Maschinenfabrik Glueckauf, Komatsu, TAKRA, Terex O & R, Thyssen Krupp Foerdertechnik and Wirtgen. 7 photos.

  15. ARM - Field Campaign - AMIE-Gan Ancillary Disdrometer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    would love to hear from you Send us a note below or call us at 1-888-ARM-DATA. Send Campaign : AMIE-Gan Ancillary Disdrometer 2012.01.01 - 2012.02.10 Lead Scientist : Mariko Oue...

  16. AMIE Gan Island Ancillary Disdrometer Field Campaign Report (Program

    Office of Scientific and Technical Information (OSTI)

    Document) | SciTech Connect SciTech Connect Search Results Program Document: AMIE Gan Island Ancillary Disdrometer Field Campaign Report Citation Details In-Document Search Title: AMIE Gan Island Ancillary Disdrometer Field Campaign Report As part of the U.S. Department of Energy (DOE)'s Atmospheric Radiation Measurement Climate Research Facility (ARM) Madden-Julian Oscillation (MJO) Investigation Experiment (AMIE), in January 2012 a disdrometer observation took place with the second ARM

  17. ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan

    SciTech Connect (OSTI)

    Long, CL; Del Genio, A; Deng, M; Fu, X; Gustafson, W; Houze, R; Jakob, C; Jensen, M; Johnson, R; Liu, X; Luke, E; May, P; McFarlane, S; Minnis, P; Schumacher, C; Vogelmann, A; Wang, Y; Webster, P; Xie, S; Zhang, C

    2011-04-11

    The overarching campaign, which includes the ARM Mobile Facility 2 (AMF2) deployment in conjunction with the Dynamics of the Madden-Julian Oscillation (DYNAMO) and the Cooperative Indian Ocean experiment on intraseasonal variability in the Year 2011 (CINDY2011) campaigns, is designed to test several current hypotheses regarding the mechanisms responsible for Madden-Julian Oscillation (MJO) initiation and propagation in the Indian Ocean area. The synergy between the proposed AMF2 deployment with DYNAMO/CINDY2011, and the corresponding funded experiment on Manus, combine for an overarching ARM MJO Investigation Experiment (AMIE) with two components: AMF2 on Gan Island in the Indian Ocean (AMIE-Gan), where the MJO initiates and starts its eastward propagation; and the ARM Manus site (AMIE-Manus), which is in the general area where the MJO usually starts to weaken in climate models. AMIE-Gan will provide measurements of particular interest to Atmospheric System Research (ASR) researchers relevant to improving the representation of MJO initiation in climate models. The framework of DYNAMO/CINDY2011 includes two proposed island-based sites and two ship-based locations forming a square pattern with sonde profiles and scanning precipitation and cloud radars at both island and ship sites. These data will be used to produce a Variational Analysis data set coinciding with the one produced for AMIE-Manus. The synergy between AMIE-Manus and AMIE-Gan will allow studies of the initiation, propagation, and evolution of the convective cloud population within the framework of the MJO. As with AMIE-Manus, AMIE-Gan/DYNAMO also includes a significant modeling component geared toward improving the representation of MJO initiation and propagation in climate and forecast models. This campaign involves the deployment of the second, marine-capable, AMF; all of the included measurement systems; and especially the scanning and vertically pointing radars. The campaign will include sonde launches at a rate of eight per day for the duration of the deployment. The increased sonde launches for the entire period matches that of the AMIE-Manus campaign and makes possible a far more robust Variational Analysis forcing data set product for the entire campaign, and thus better capabilities for modeling studies and synergistic research using the data from both AMIE sites.

  18. ARM - VAP Product - visstpx04m1rv3minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rv3minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX04M1RV3MINNIS VISST-derived pixel-level products from satellite MTSAT, version 3 Active Dates 2007.10.01 - 2007.12.31

  19. ARM - VAP Product - visstpx04m1rv4minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rv4minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX04M1RV4MINNIS VISST-derived pixel-level products from satellite MTSAT, version 4 Active Dates 2008.01.01 - 2008.04.30

  20. AMF Deployment, Black Forest, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Germany Black Forest Deployment AMF Home Black Forest Home Data Plots and Baseline Instruments CERA COPS Data University of Hohenheim COPS Website COPS Update, April 2009...

  1. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  2. ARM - VAP Product - visstpx04m1rv1minnis

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rv1minnis Documentation visst : XDC documentation Data Management Facility Plots (Quick Looks) ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : VISSTPX04M1RV1MINNIS VISST-derived pixel-level products from satellite MTSAT, version 1 Active Dates 2006.01.01 - 2006.02.28 Originating VAP Process Minnis Cloud Products Using Visst Algorithm : VISST Measurements The measurements below provided by this product

  3. Germany Geothermal Region | Open Energy Information

    Open Energy Info (EERE)

    Germany Geothermal Region Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Germany Geothermal Region Details Areas (1) Power Plants (0) Projects (0) Techniques (0)...

  4. Berlin, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    in Berlin, Germany Ecologic Institute German Federal Ministry for the Environment, Nature Conservation and Nuclear Safety Registered Energy Companies in Berlin, Germany 8KU...

  5. Conductivity based on selective etch for GaN devices and applications thereof

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  6. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  7. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  8. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  9. Etelligence (Smart Grid Project) (Cuxhaven, Germany) | Open Energy...

    Open Energy Info (EERE)

    (Cuxhaven, Germany) Jump to: navigation, search Project Name Etelligence Country Germany Headquarters Location Cuxhaven, Germany Coordinates 53.861702, 8.694068 Loading map......

  10. EEnergy Project "MeRegio" (Smart Grid Project) (Freiamt, Germany...

    Open Energy Info (EERE)

    Freiamt, Germany) Jump to: navigation, search Project Name EEnergy Project "MeRegio" Country Germany Headquarters Location Freiamt, Germany Coordinates 48.170155, 7.906666...

  11. EEnergy Project "MeRegio" (Smart Grid Project) (Ettenheim, Germany...

    Open Energy Info (EERE)

    Ettenheim, Germany) Jump to: navigation, search Project Name EEnergy Project "MeRegio" Country Germany Headquarters Location Ettenheim, Germany Coordinates 48.252537, 7.813286...

  12. Westport Germany GmbH | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Westport Germany GmbH Place: Germany Sector: Hydro, Hydrogen Product: Germany-based, regional office of Westport Innovations that develops and...

  13. Structural defects in GaN revealed by Transmission Electron Microscopy

    SciTech Connect (OSTI)

    Liliental-Weber, Zuzanna

    2014-04-18

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  14. Structural defects in GaN revealed by Transmission Electron Microscopy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Liliental-Weber, Zuzanna

    2014-09-08

    This paper reviews the various types of structural defects observed by Transmission Electron Microscopy in GaN heteroepitaxial layers grown on foreign substrates and homoepitaxial layers grown on bulk GaN substrates. The structural perfection of these layers is compared to the platelet self-standing crystals grown by High Nitrogen Pressure Solution. Defects in undoped and Mg doped GaN are discussed. Lastly, some models explaining the formation of inversion domains in heavily Mg doped layers that are possible defects responsible for the difficulties of p-doping in GaN are also reviewed.

  15. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email...

  16. AMIE Gan Island Ancillary Disdrometer Field Campaign Report

    Office of Scientific and Technical Information (OSTI)

    4 AMIE Gan Island Ancillary Disdrometer Field Campaign Report M Oue April 2016 CLIMATE RESEARCH FACILITY DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use

  17. AMIE Gan Island Ancillary Disdrometer Field Campaign Report

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 AMIE Gan Island Ancillary Disdrometer Field Campaign Report April 2016 M Oue DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe

  18. Bonn, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Bonn, Germany: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 2946447 Coordinates 50.7327045, 7.0963113 Show Map Loading map......

  19. Cologne, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Cologne, Germany: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 2886242 Coordinates 50.93333, 6.95 Show Map Loading map......

  20. Wilhelmshaven, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Wilhelmshaven, Germany: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 2808720 Coordinates 53.517063, 8.119749 Show Map Loading map......

  1. Arnstadt, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Arnstadt, Germany: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 2955439 Coordinates 50.83333, 10.95 Show Map Loading map......

  2. Hannover, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hannover, Germany: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 2910831 Coordinates 52.37052, 9.73322 Show Map Loading map......

  3. This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

    DOE Patents [OSTI]

    Zhang, Yu; Sun, Qian; Han, Jung

    2015-12-08

    This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm.sup.2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

  4. EWIS European wind integration study (Smart Grid Project) (Germany...

    Open Energy Info (EERE)

    Germany) Jump to: navigation, search Project Name EWIS European wind integration study Country Germany Coordinates 51.165691, 10.451526 Loading map... "minzoom":false,"mapping...

  5. Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

    SciTech Connect (OSTI)

    Bolat, S. E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, B.; Ozgit-Akgun, C.; Biyikli, N.; Okyay, A. K. E-mail: aokyay@ee.bilkent.edu.tr

    2014-06-16

    We report GaN thin film transistors (TFT) with a thermal budget below 250?C. GaN thin films are grown at 200?C by hollow cathode plasma-assisted atomic layer deposition (HCPA-ALD). HCPA-ALD-based GaN thin films are found to have a polycrystalline wurtzite structure with an average crystallite size of 9.3?nm. TFTs with bottom gate configuration are fabricated with HCPA-ALD grown GaN channel layers. Fabricated TFTs exhibit n-type field effect characteristics. N-channel GaN TFTs demonstrated on-to-off ratios (I{sub ON}/I{sub OFF}) of 10{sup 3} and sub-threshold swing of 3.3?V/decade. The entire TFT device fabrication process temperature is below 250?C, which is the lowest process temperature reported for GaN based transistors, so far.

  6. Intrinsic polarization control in rectangular GaN nanowire lasers

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Changyi; Liu, Sheng; Luk, Ting S.; Figiel, Jeffrey J.; Brener, Igal; Brueck, S. R. J.; Wang, George T.

    2016-02-01

    In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control overmore » the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.« less

  7. SECTION M EVALUATION FACTORS FOR AWARD TABLE OF CONTENTS M-1 EVALUATION OF PROPOSALS .....................................................................................2

    National Nuclear Security Administration (NNSA)

    TABLE OF CONTENTS M-1 EVALUATION OF PROPOSALS .....................................................................................2 M-2 BASIS FOR CONTRACT AWARD ...................................................................................3 M-3 TECHNICAL AND MANAGEMENT CRITERIA ..........................................................3 M-4 COST EVALUATION CRITERION .................................................................................5 Section M, Evaluation Factors Request for

  8. SECTION M EVALUATION FACTORS FOR AWARD TABLE OF CONTENTS M-1 EVALUATION OF PROPOSALS .....................................................................................2

    National Nuclear Security Administration (NNSA)

    M EVALUATION FACTORS FOR AWARD TABLE OF CONTENTS M-1 EVALUATION OF PROPOSALS .....................................................................................2 M-2 BASIS FOR CONTRACT AWARD ...................................................................................3 M-3 TECHNICAL AND MANAGEMENT CRITERIA ..........................................................3 M-4 COST CRITERION

  9. Hamburg, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Hamburg, Germany: Energy Resources Jump to: navigation, search Equivalent URI DBpedia GeoNames ID 2911298 Coordinates 53.55, 10 Show Map Loading map... "minzoom":false,"mappin...

  10. Munich, Germany: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Energy Companies in Munich, Germany ACTANOL Service Ltd Allianz Climate Solutions ACS GmbH Amann GmbH BMW BayWa Group Centrosolar Group AG FutureCamp GmBH Mepsolar AG aka...

  11. GaN Initiative for Grid Applications (GIGA)

    SciTech Connect (OSTI)

    Turner, George

    2015-07-03

    For nearly 4 ½ years, MIT Lincoln Laboratory (MIT/LL) led a very successful, DoE-funded team effort to develop GaN-on-Si materials and devices, targeting high-voltage (>1 kV), high-power, cost-effective electronics for grid applications. This effort, called the GaN Initiative for Grid Applications (GIGA) program, was initially made up of MIT/LL, the MIT campus group of Prof. Tomas Palacios (MIT), and the industrial partner M/A Com Technology Solutions (MTS). Later in the program a 4th team member was added (IQE MA) to provide commercial-scale GaN-on-Si epitaxial materials. A basic premise of the GIGA program was that power electronics, for ubiquitous utilization -even for grid applications - should be closer in cost structure to more conventional Si-based power electronics. For a number of reasons, more established GaN-on-SiC or even SiC-based power electronics are not likely to reach theses cost structures, even in higher manufacturing volumes. An additional premise of the GIGA program was that the technical focus would be on materials and devices suitable for operating at voltages > 1 kV, even though there is also significant commercial interest in developing lower voltage (< 1 kV), cost effective GaN-on-Si devices for higher volume applications, like consumer products. Remarkable technical progress was made during the course of this program. Advances in materials included the growth of high-quality, crack-free epitaxial GaN layers on large-diameter Si substrates with thicknesses up to ~5 μm, overcoming significant challenges in lattice mismatch and thermal expansion differences between Si and GaN in the actual epitaxial growth process. Such thick epilayers are crucial for high voltage operation of lateral geometry devices such as Schottky barrier (SB) diodes and high electron mobility transistors (HEMTs). New “Normally-Off” device architectures were demonstrated – for safe operation of power electronics circuits. The trade-offs between lateral and vertical devices were explored, with the conclusion that lateral devices are superior for fundamental thermal reasons, as well as for the demonstration of future generations of monolithic power circuits. As part of the materials and device investigations breakdown mechanisms in GaN-on-Si structures were fully characterized and effective electric field engineering was recognized as critical for achieving even higher voltage operation. Improved device contact technology was demonstrated, including the first gold-free metallizations (to enable processing in CMOS foundries) while maintaining low specific contact resistance needed for high-power operation and 5-order-of magnitude improvement in device leakage currents (essential for high power operation). In addition, initial GaN-on-Si epitaxial growth was performed on 8”/200 mm Si starting substrates.

  12. Mission hazard assessment for STARS Mission 1 (M1) in the Marshall Islands area

    SciTech Connect (OSTI)

    Outka, D.E.; LaFarge, R.A.

    1993-07-01

    A mission hazard assessment has been performed for the Strategic Target System Mission 1 (known as STARS M1) for hazards due to potential debris impact in the Marshall Islands area. The work was performed at Sandia National Laboratories as a result of discussion with Kwajalein Missile Range (KMR) safety officers. The STARS M1 rocket will be launched from the Kauai Test Facility (KTF), Hawaii, and deliver two payloads to within the viewing range of sensors located on the Kwajalein Atoll. The purpose of this work has been to estimate upper bounds for expected casualty rates and impact probability or the Marshall Islands areas which adjoin the STARS M1 instantaneous impact point (IIP) trace. This report documents the methodology and results of the analysis.

  13. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B. Singh, Shubra Baskar, K.

    2014-04-24

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  14. EDeMa (Smart Grid Project) (Krefeld, Germany) | Open Energy Informatio...

    Open Energy Info (EERE)

    (Krefeld, Germany) Jump to: navigation, search Project Name EDeMa Country Germany Headquarters Location Krefeld, Germany Coordinates 50.652943, 6.339111 Loading map......

  15. New probe of M1 and E1 strengths in GDR regions

    SciTech Connect (OSTI)

    Hayakawa, T. [Japan Atomic Energy Agency and National Astronomical Observatory in Japan (Japan); Ogata, K. [RCNP, Osaka University (Japan); Miyamoto, S.; Mochizuki, T.; Horikawa, K.; Amano, S. [University of Hyogo (Japan); Imazaki, K.; Li, D.; Izawa, Y. [Institute for Laser Technology (Japan); Chiba, S. [Tokyo Institute of Technology (Japan)

    2014-05-02

    The M1 strengths (or level density of 1{sup +} states) are of importance for estimation of interaction strengths between neutrinos and nuclei for the study of the supernova neutrino-process. In 1957, Agodi predicted theoretically angular distribution of neutrons emitted from states excited via dipole transitions with linearly polarized gamma-ray beam at the polar angle of ?=90 should be followed by a simple function, a + b cos(2?), where ?, is azimuthal angel. However, this theoretical prediction has not been verified over the wide mass region except for light nuclei as deuteron. We have measured neutron angular distributions with (polarized gamma, n) reactions on Au, Nal, and Cu. We have verified the Agodi's prediction for the first time over the wide mass region. This suggests that (polarized gamma, n) reactions may be useful tools to study M1 strengths in giant resonance regions.

  16. Surface Termination of M1 Phase and Rational Design of Propane Ammoxidation Catalysts

    SciTech Connect (OSTI)

    Guliants, Vadim

    2015-02-16

    This final report describes major accomplishments in this research project which has demonstrated that the M1 phase is the only crystalline phase required for propane ammoxidation to acrylonitrile and that a surface monolayer terminating the ab planes of the M1 phase is responsible for their activity and selectivity in this reaction. Fundamental studies of the topmost surface chemistry and mechanism of propane ammoxidation over the Mo-V-(Te,Sb)-(Nb,Ta)-O M1 and M2 phases resulted in the development of quantitative understanding of the surface molecular structure – reactivity relationships for this unique catalytic system. These oxides possess unique catalytic properties among mixed metal oxides, because they selectively catalyze three alkane transformation reactions, namely propane ammoxidation to acrylonitrile, propane oxidation to acrylic acid and ethane oxidative dehydrogenation, all of considerable economic significance. Therefore, the larger goal of this research was to expand this catalysis to other alkanes of commercial interest, and more broadly, demonstrate successful approaches to rational design of improved catalysts that can be applied to other selective (amm)oxidation processes.

  17. Electrical and optical properties of carbon-doped GaN grown by MBE on MOCVD GaN templates using a CCl4 dopant source

    SciTech Connect (OSTI)

    Armitage, Rob; Yang, Qing; Feick, Henning; Park, Yeonjoon; Weber, Eicke R.

    2002-04-15

    Carbon-doped GaN was grown by plasma-assisted molecular-beam epitaxy using carbon tetrachloride vapor as the dopant source. For moderate doping mainly acceptors were formed, yielding semi-insulating GaN. However at higher concentrations p-type conductivity was not observed, and heavily doped films (>5 x 10{sup 20} cm{sup -3}) were actually n-type rather than semi-insulating. Photoluminescence measurements showed two broad luminescence bands centered at 2.2 and 2.9 eV. The intensity of both bands increased with carbon content, but the 2.2 eV band dominated in n-type samples. Intense, narrow ({approx}6 meV) donor-bound exciton peaks were observed in the semi-insulating samples.

  18. Tunnel-injection GaN quantum dot ultraviolet light-emitting diodes

    SciTech Connect (OSTI)

    Verma, Jai; Kandaswamy, Prem Kumar; Protasenko, Vladimir; Verma, Amit; Grace Xing, Huili; Jena, Debdeep

    2013-01-28

    We demonstrate a GaN quantum dot ultraviolet light-emitting diode that uses tunnel injection of carriers through AlN barriers into the active region. The quantum dot heterostructure is grown by molecular beam epitaxy on AlN templates. The large lattice mismatch between GaN and AlN favors the formation of GaN quantum dots in the Stranski-Krastanov growth mode. Carrier injection by tunneling can mitigate losses incurred in hot-carrier injection in light emitting heterostructures. To achieve tunnel injection, relatively low composition AlGaN is used for n- and p-type layers to simultaneously take advantage of effective band alignment and efficient doping. The small height of the quantum dots results in short-wavelength emission and are simultaneously an effective tool to fight the reduction of oscillator strength from quantum-confined Stark effect due to polarization fields. The strong quantum confinement results in room-temperature electroluminescence peaks at 261 and 340 nm, well above the 365 nm bandgap of bulk GaN. The demonstration opens the doorway to exploit many varied features of quantum dot physics to realize high-efficiency short-wavelength light sources.

  19. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  20. Influence of growth temperature and temperature ramps on deep level defect incorporation in m-plane GaN

    SciTech Connect (OSTI)

    Armstrong, A. M.; Kelchner, K.; Nakamura, S.; DenBaars, S. P.; Materials Department, University of California, Santa Barbara, California 93106 ; Speck, J. S.

    2013-12-02

    The dependence of deep level defect incorporation in m-plane GaN films grown by metal-organic chemical vapor deposition on bulk m-plane GaN substrates as a function of growth temperature (T{sub g}) and T{sub g} ramping method was investigated using deep level optical spectroscopy. Understanding the influence of T{sub g} on GaN deep level incorporation is important for InGaN/GaN multi-quantum well (MQW) light emitting diodes (LEDs) and laser diodes (LDs) because GaN quantum barrier (QB) layers are grown much colder than thin film GaN to accommodate InGaN QW growth. Deep level spectra of low T{sub g} (800?C) GaN films grown under QB conditions were compared to deep level spectra of high T{sub g} (1150?C) GaN. Reducing T{sub g}, increased the defect density significantly (>50) through introduction of emergent deep level defects at 2.09?eV and 2.9?eV below the conduction band minimum. However, optimizing growth conditions during the temperature ramp when transitioning from high to low T{sub g} substantially reduced the density of these emergent deep levels by approximately 40%. The results suggest that it is important to consider the potential for non-radiative recombination in QBs of LED or LD active regions, and tailoring the transition from high T{sub g} GaN growth to active layer growth can mitigate such non-radiative channels.

  1. Energy R and D in Germany

    SciTech Connect (OSTI)

    Runci, PJ

    1999-11-01

    Germany's total national (i.e., combined public and private sector) funding for R&D stood at $42 billion in 1997. The private sector accounted for nearly 62% ($24 billion) of the total, while the public sector accounted for approximately 38%. Since the late 1970s, when the public and private sectors each funded roughly half of Germany's R&D, the private sector has steadily assumed a larger and larger role as the dominant supporter of R&D activity, while overall government funding has remained essentially flat for much of the past two decades. In addition to declining relative to private R&D expenditures, public R&D expenditures in Germany declined by 4% in real terms between 1991 and 1997, to approximately $15 billion. The reduction in R&D investments in the public sector can be attributed in large part to the financial challenges associated with German reunification and related shifts in social priorities including efforts to address high unemployment and to rebuild basic infrastructure in the eastern states. R&D expenditures have also declined as a percentage of the total public budget, from a peak of 3.4% in 1985 to 2.7% in 1996. Energy R&D has been the hardest hit of all major socioeconomic areas of R&D expenditure funded by the German government. Between 1981 and 1997, public energy R&D fell from approximately $1.6 billion to $400 million--a 75% real decline. The $850 million reduction in Germany's fission R&D budget (which constituted two-thirds of government R&D investment in 1985) explains some 90% of the funding decline. Negative public perceptions regarding the safety and environmental impacts of nuclear energy have reduced nuclear power's viability as a long-term energy option for Germany. Discussions of a complete nuclear phaseout are now under way. At the same time, the German government has slashed its investments in fossil energy R&D by more than 90%. While energy efficiency and renewable energy technologies have fared relatively well in comparison with other energy technology areas, government support for all areas of energy R&D has declined in absolute terms since 1990. Remaining public and private sector energy R&D investments focus increasingly technology demonstration and commercialization efforts with relatively short time horizons.

  2. Search for 14.4 keV solar axions from M1 transition of Fe-57...

    Office of Scientific and Technical Information (OSTI)

    Search for 14.4 keV solar axions from M1 transition of Fe-57 with CUORE crystals Citation Details In-Document Search Title: Search for 14.4 keV solar axions from M1 transition of...

  3. Anisotropy of two-photon absorption and free-carrier effect in nonpolar GaN

    SciTech Connect (OSTI)

    Fang, Yu; Zhou, Feng; Yang, Junyi; Wu, Xingzhi; Xiao, Zhengguo; Li, Zhongguo; Song, Yinglin

    2015-03-30

    We reported a systematic study about the anisotropic optical nonlinearities in bulk m-plane and a-plane GaN crystals by Z-scan and pump-probe with phase object methods under picosecond at 532?nm. The two-photon absorption coefficient, which was measured as a function of polarization angle, exhibited oscillation curves with a period of ?/2, indicating a highly polarized optical third-order nonlinearity in both nonpolar GaN samples. Furthermore, free-carrier absorption revealed stronger hole-related absorption for E?c than for E//c probe polarization. In contrast, free-carrier refraction was found almost isotropic due to electron-related refraction in the isotropic conduction bands.

  4. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; et al

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remainmore » superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.« less

  5. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, E. A.; Shelton, T. C.; Collazo, R.; Sitar, Z.; Maria, J.-P.; Christen, H. M.; Biegalski, M. D.; Mita, S.

    2012-08-27

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy and pulsed laser deposition using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface by stabilizing the {l_brace}111{r_brace} rocksalt facet. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly 100 Multiplication-Sign reduction in leakage current density for the surfactant-assisted samples. These data verify numerous predictions regarding the role of H-termination in regulating the habit of rocksalt crystals.

  6. Catalyst and its diameter dependent growth kinetics of CVD grown GaN nanowires

    SciTech Connect (OSTI)

    Samanta, Chandan [Department of Physics, Indian Institute of Technology Kanpur (India)] [Department of Physics, Indian Institute of Technology Kanpur (India); Chander, D. Sathish [Department of Physics, Indian Institute of Technology Kanpur (India) [Department of Physics, Indian Institute of Technology Kanpur (India); Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Ramkumar, J. [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India)] [Department of Mechanical Engineering, Indian Institute of Technology Kanpur (India); Dhamodaran, S., E-mail: kdams2003@gmail.com [Department of Physics, Indian Institute of Technology Kanpur (India)

    2012-04-15

    Graphical abstract: GaN nanowires with controlled diameter and aspect ratio has been grown using a simple CVD technique. The growth kinetics of CVD grown nanowires investigated in detail for different catalysts and their diameters. A critical diameter important to distinguish the growth regimes has been discussed in detail. The results are important which demonstrates the growth of diameter and aspect ratio controlled GaN nanowires and also understand their growth kinetics. Highlights: Black-Right-Pointing-Pointer Controlled diameter and aspect ratio of GaN nanowires achieved in simple CVD reactor. Black-Right-Pointing-Pointer Nanowire growth kinetics for different catalyst and its diameters were understood. Black-Right-Pointing-Pointer Adatoms vapor pressure inside reactor plays a crucial role in growth kinetics. Black-Right-Pointing-Pointer Diffusion along nanowire sidewalls dominate for gold and nickel catalysts. Black-Right-Pointing-Pointer Gibbs-Thomson effect dominates for palladium catalyst. -- Abstract: GaN nanowires were grown using chemical vapor deposition with controlled aspect ratio. The catalyst and catalyst-diameter dependent growth kinetics is investigated in detail. We first discuss gold catalyst diameter dependent growth kinetics and subsequently compare with nickel and palladium catalyst. For different diameters of gold catalyst there was hardly any variation in the length of the nanowires but for other catalysts with different diameter a strong length variation of the nanowires was observed. We calculated the critical diameter dependence on adatoms pressure inside the reactor and inside the catalytic particle. This gives an increasing trend in critical diameter as per the order gold, nickel and palladium for the current set of experimental conditions. Based on the critical diameter, with gold and nickel catalyst the nanowire growth was understood to be governed by limited surface diffusion of adatoms and by Gibbs-Thomson effect for the palladium catalyst.

  7. Hafnium nitride buffer layers for growth of GaN on silicon

    DOE Patents [OSTI]

    Armitage, Robert D.; Weber, Eicke R.

    2005-08-16

    Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

  8. Analysis of the carbon-related 'blue' luminescence in GaN

    SciTech Connect (OSTI)

    Armitage, R.; Yang, Q.; Weber, E.R.

    2004-09-24

    The properties of a broad 2.86 eV photoluminescence band in carbon-doped GaN were studied as a function of C-doping level, temperature, and excitation density. The results are consistent with a C{sub Ga}-C{sub N} deep donor-deep acceptor recombination mechanism as proposed by Seager et al. For GaN:C grown by molecular-beam epitaxy (MBE) the 2.86 eV band is observed in Si co-doped layers exhibiting high n-type conductivity as well as in semi-insulating material. For low excitation density (4 W/cm{sup 2}) the 2.86 eV band intensity decreases as a function of cw-laser exposure time over a period of many minutes. The transient behavior is consistent with a model based on carrier diffusion and charge trapping-induced Coulomb barriers. The temperature dependence of the blue luminescence below 150 K was different for carbon-contaminated GaN grown by metalorganic vapor phase epitaxy (MOVPE) compared to C-doped MBE GaN.

  9. Vertical GaN power diodes with a bilayer edge termination

    SciTech Connect (OSTI)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; Wierer, Jr., Jonathan J.

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type drift region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.

  10. Formation of manganese {delta}-doped atomic layer in wurtzite GaN

    SciTech Connect (OSTI)

    Shi Meng; Chinchore, Abhijit; Wang Kangkang; Mandru, Andrada-Oana; Liu Yinghao; Smith, Arthur R.

    2012-09-01

    We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

  11. Vertical GaN power diodes with a bilayer edge termination

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Dickerson, Jeramy R.; Allerman, Andrew A.; Bryant, Benjamin N.; Fischer, Arthur J.; King, Michael P.; Moseley, Michael W.; Armstrong, Andrew M.; Kaplar, Robert J.; Kizilyalli, Isik C.; Aktas, Ozgur; et al

    2015-12-07

    Vertical GaN power diodes with a bilayer edge termination (ET) are demonstrated. The GaN p-n junction is formed on a low threading dislocation defect density (104 - 105 cm-2) GaN substrate, and has a 15-μm-thick n-type drift layer with a free carrier concentration of 5 × 1015 cm-3. The ET structure is formed by N implantation into the p+-GaN epilayer just outside the p-type contact to create compensating defects. The implant defect profile may be approximated by a bilayer structure consisting of a fully compensated layer near the surface, followed by a 90% compensated (p) layer near the n-type driftmore » region. These devices exhibit avalanche breakdown as high as 2.6 kV at room temperature. In addition simulations show that the ET created by implantation is an effective way to laterally distribute the electric field over a large area. This increases the voltage at which impact ionization occurs and leads to the observed higher breakdown voltages.« less

  12. MHK Projects/Munich Germany SHP | Open Energy Information

    Open Energy Info (EERE)

    Munich Germany SHP < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP"...

  13. MHK Projects/Rosenheim Germany SHP | Open Energy Information

    Open Energy Info (EERE)

    Rosenheim Germany SHP < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... "minzoom":false,"mappingservice":"googlemaps3","type":"ROADM...

  14. 2015 Wind Turbine Blade Manufacture Conference-Dusseldorf, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wind Turbine Blade Manufacture Conference-Dusseldorf, Germany - Sandia Energy Energy ... Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power ...

  15. Status of wind energy in Germany

    SciTech Connect (OSTI)

    Gerdes, G.; Molly, J.P.; Rehfeldt, K.

    1996-12-31

    By the end of 1995 in total 3655 wind turbines (WT`s) were installed in Germany with a total capacity of 1,136 MW. In the year 1995 alone the WT installations grew by 1,070 units with 505 MW. About 40% of the 1995 installations were sold to inland states of Germany with their lower wind speed potential. This fast development occurred in parallel to continuously reduced local state and federal subsidies. The further development is based mainly on the guaranteed reimbursement due to the Electricity Feed Law. But since some time the electricity utilities fight back on all legal and political levels to get cancelled the unloved Electricity Feed Law and since two years the building construction law with the foreseen privilege for WT`s is discussed without any result. All these difficulties affect investors and credit giving banks in such a negative way, that the further annual increase in wind power installation for 1996 could be 10 to 20% less than in 1995. Many of the new commercial Megawatt WT`s have pitch control and variable rotor speed which cause better electrical power quality and lower life time loads. From statistical evaluations on technical data of WT`s a good overview of the further development is derived. 8 refs., 10 figs.

  16. Spectroscopic and magnetic properties of Mn doped GaN epitaxial films grown by plasma assisted molecular beam epitaxy

    SciTech Connect (OSTI)

    Vidyasagar, R.; Lin, Y.-T.; Tu, L.-W.

    2012-12-15

    Graphical abstract: We report here that micro-Raman scattering spectrum for Mn doped GaN thin film has displayed a new peak manifested at 578 cm{sup −1}, by which it is attributed to interior LVM originated by the incorporation of Mn ions in place of Ga sites. Mn doped GaN thin film also showed the typical negative magnetoresistance up to ∼50 K, revealing that the film showed magnetic ordering of spins below 50 K. Display Omitted Highlights: ► GaN and Mn doped GaN single phase wurtzite structures grown by PAMBE. ► The phase purity of the epilayers investigated by HRXRD, HRSEM and EDX. ► The red shift in near band edge emission has been observed using micro-PL. ► A new peak related LVM at 578 cm{sup −1} in micro-Raman scattering measurements confirmed Mn doped into GaN. ► Negative-magnetoresistance investigations have showed that the film has T{sub c} < 50 K. -- Abstract: Spectroscopic and magnetic properties of Mn doped GaN, and GaN epitaxial films have been investigated by employing micro-photoluminescence, micro-Raman, and temperature dependent magneto-resistance measurements. The HR-XRD profiles have shown that the epitaxial films are in hexagonal wurtzite structures. Morphology and composition of the films have been examined by field emission scanning electron microscopy, and energy-dispersive X-ray analysis. Micro-photoluminescence spectrum displayed a dominant near band edge emission at 362 nm, which is assigned to near band edge transition within the hexagonal structure of GaN. Raman scattering profiles showed a new vibrational mode at 578 cm{sup −1}, which is attributed to the vacancy-related local vibrational mode of Mn occupying the Ga site. Temperature dependent negative magnetoresistance measurements provide a direct evidence of magnetic ordering below 50 K for the Mn doped GaN thin film.

  17. Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

    SciTech Connect (OSTI)

    Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.; Tadjer, Marko J.

    2014-08-14

    The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200?C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100?C exceeds the quality of the as-grown films. At 1200?C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200?C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150?C due to crystal quality and surface morphology considerations.

  18. Ab initio study on noncompensated CrO codoping of GaN for enhanced solar energy conversion

    SciTech Connect (OSTI)

    Pan, Hui; Gu, Baohua; Eres, Gyula; Zhang, Zhenyu

    2010-03-01

    We describe a novel photocatalyst obtained by codoping GaN with CrO, according to a new "noncompensated" codoping concept based on first-principles calculations. The approach enables controllable narrowing of the GaN band gap with significantly enhanced carrier mobility and photocatalytic activity in the visible light region and thus offers immense potential for application in solar energy conversion, water splitting, and a variety of solar-assisted photocatalysis. Our calculations indicate that the formation energy for the cation doping is greatly reduced by noncompensated codoping with an anion. Although Cr doping alone can split the band gap with the formation of an intermediate band, the mobility is low due to carrier trapping by the localized states. The first-principles calculations also demonstrate that CrO codoping of GaN shifts the Fermi level into the conduction band resulting in high carrier density and mobility.

  19. Fundamental Bulk/Surface Structure Photoactivity Relationships of Supported (Rh2-yCryO3)/GaN Photocatalysts

    SciTech Connect (OSTI)

    Phivilay, Somphonh; Roberts, Charles; Puretzky, Alexander A; Domen, Kazunari Domen; Wachs, Israel

    2013-01-01

    ABSTRACT. The supported (Rh2-yCryO3)/GaN photocatalyst was examined as a model nitride photocatalyst system to assist in the development of fundamental structure photoactivity relationships for UV activated water splitting. Surface characterization of the outermost surface layers by High Sensitivity-LEIS and High Resolution-XPS revealed for the first time that the GaN support consists of a GaOx outermost surface layer and a thin film of GaOxNy in the surface region. HR-XPS also demonstrates that the supported (Rh2-yCryO3) mixed oxide nanoparticles (NPs) exclusively consist of Cr+3 and Rh+3 cations and are surface enriched for the supported (Rh2-yCryO3)/GaN photocatalyst. Bulk analysis by Raman and UV-vis spectroscopy show that the bulk molecular and electronic structures, respectively, of the GaN support are not perturbed by the deposition of the (Rh2-yCryO3) mixed oxide NPs. The function of the GaN bulk lattice is to generate photoexcited electrons/holes, with the electrons harnessed by the surface Rh+3 sites for evolution of H2 and the holes trapped at the Ga oxide/oxynitride surface sites for splitting of water and evolving O2. These new structure-photoactivity relationships for supported (Rh2-yCryO3)/GaN also extend to the best performing visible light activated supported (Rh2-yCryO3)/(Ga1-xZnx)(N1-xOx) photocatalyst.

  20. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Citation Details In-Document Search Title: Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN. Abstract not provided. Authors: Ihlefeld, Jon ; Brumbach, Michael T. ; Allerman, Andrew A. ; Wheeler, David Roger ; Atcitty, Stanley Publication Date: 2015-01-01 OSTI Identifier: 1244879 Report Number(s): SAND2015-0073C 558329 DOE Contract Number: AC04-94AL85000 Resource

  1. Electroreflectance study of the effect of {gamma} radiation on the optical properties of epitaxial GaN films

    SciTech Connect (OSTI)

    Belyaev, A. E.; Klyui, N. I. Konakova, R. V.; Lukyanov, A. N.; Danilchenko, B. A.; Sveshnikov, J. N.; Klyui, A. N.

    2012-03-15

    Experimental data on the electroreflectance spectra of {gamma}-irradiated epitaxial GaN films on sapphire are reported. The irradiation doses are 10{sup 5}-2 Multiplication-Sign 10{sup 6} rad. The theoretical electroreflectance spectra calculated on the basis of a model of three types of transitions are in agreement with experimental data with reasonable accuracy. The energies and broadenings of the transitions derived in the context of the model give grounds to infer that, in the GaN films, there are internal stresses dependent on the {gamma}-irradiation dose.

  2. Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires

    SciTech Connect (OSTI)

    Mamand, S.M.; Omar, M.S.; Muhammad, A.J.

    2012-05-15

    Graphical abstract: Temperature dependence of calculated lattice thermal conductivity of Wurtzite GaN nanowires. Highlights: Black-Right-Pointing-Pointer A modified Callaway model is used to calculate lattice thermal conductivity of Wurtzite GaN nanowires. Black-Right-Pointing-Pointer A direct method is used to calculate phonon group velocity for these nanowires. Black-Right-Pointing-Pointer 3-Gruneisen parameter, surface roughness, and dislocations are successfully investigated. Black-Right-Pointing-Pointer Dislocation densities are decreases with the decrease of wires diameter. -- Abstract: A detailed calculation of lattice thermal conductivity of freestanding Wurtzite GaN nanowires with diameter ranging from 97 to 160 nm in the temperature range 2-300 K, was performed using a modified Callaway model. Both longitudinal and transverse modes are taken into account explicitly in the model. A method is used to calculate the Debye and phonon group velocities for different nanowire diameters from their related melting points. Effect of Gruneisen parameter, surface roughness, and dislocations as structure dependent parameters are successfully used to correlate the calculated values of lattice thermal conductivity to that of the experimentally measured curves. It was observed that Gruneisen parameter will decrease with decreasing nanowire diameters. Scattering of phonons is assumed to be by nanowire boundaries, imperfections, dislocations, electrons, and other phonons via both normal and Umklapp processes. Phonon confinement and size effects as well as the role of dislocation in limiting thermal conductivity are investigated. At high temperatures and for dislocation densities greater than 10{sup 14} m{sup -2} the lattice thermal conductivity would be limited by dislocation density, but for dislocation densities less than 10{sup 14} m{sup -2}, lattice thermal conductivity would be independent of that.

  3. Impact of the GaN nanowire polarity on energy harvesting

    SciTech Connect (OSTI)

    Gogneau, Noelle Galopin, Elisabeth; Guilet, Stephane; Travers, Laurent; Harmand, Jean-Christophe; Chrétien, Pascal; Houzé, Frédéric

    2014-05-26

    We investigate the piezoelectric generation properties of GaN nanowires (NWs) by atomic force microscopy equipped with a Resiscope module for electrical measurements. By correlating the topography profile of the NWs with the recorded voltage peaks generated by these nanostructures in response to their deformation, we demonstrate the influence of their polarity on the rectifying behavior of the Schottky diode formed between the NWs and the electrode of measurement. These results establish that the piezo-generation mechanism crucially depends on the structural characteristics of the NWs.

  4. Mechanism of the GaN LED efficiency falloff with increasing current

    SciTech Connect (OSTI)

    Bochkareva, N. I.; Voronenkov, V. V.; Gorbunov, R. I.; Zubrilov, A. S.; Lelikov, Y. S.; Latyshev, F. E.; Rebane, Y. T.; Tsyuk, A. I.; Shreter, Y. G.

    2010-06-15

    The quantum efficiency of GaN LED structures has been studied at various temperatures and biases. It was found that an efficiency falloff is observed with increasing current density and, simultaneously, the tunnel component of the current through the LED grows and the quasi-Fermi levels reach the mobility edge in the InGaN active layer. It is shown that the internal quantum efficiency falloff with increasing current density is due to the carrier leakage from the quantum well as a result of tunnel transitions from its band-tail states to local defect-related energy levels within the energy gaps of the barrier layers.

  5. The effect of N-polar GaN domains as Ohmic contacts

    SciTech Connect (OSTI)

    Xie, J.; Mita, S.; Collazo, R.; Rice, A.; Tweedie, J.; Sitar, Z.

    2010-09-20

    Transfer line method measurements revealed that if the Ohmic contact regions were replaced by N-polar GaN, the contact resistance could be reduced from 0.71 {Omega} mm (or {rho}{sub c}=4x10{sup -6} {Omega} cm{sup 2}) to 0.24 {Omega} mm for a {approx}200 nm thick Si-doped GaN layer. The reduction in contact resistance was largely due to the {approx}10{sup 19} cm{sup -3} free carriers in N-polar source/drain regions as measured by Hall effect. Secondary ion mass spectroscopy confirmed that oxygen doping in the N-polar region was more than three orders of magnitude greater than that in the Ga-polar region that was explained by the large difference in the adsorption energy for oxygen ({approx}1.3 eV/atom) between the N- and Ga-polar surfaces during the metalorganic chemical vapor deposition.

  6. Surfactant assisted growth of MgO films on GaN

    SciTech Connect (OSTI)

    Paisley, Elisibeth A.; Shelton, T C; Mita, S; Gaddy, Brian E.; Irving, D L; Christen, Hans M; Sitar, Z; Biegalski, Michael D; Maria, Jon Paul

    2012-01-01

    Thin epitaxial films of <111> oriented MgO on [0001]-oriented GaN were grown by molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) using the assistance of a vapor phase surfactant. In both cases, surfactant incorporation enabled layer-by-layer growth and a smooth terminal surface due to stabilizing the {111} rocksalt facet. MBE growth of MgO in water terminates after several monolayers, and is attributed to saturation of surface active sites needed to facilitate the Mg oxidation reaction. MgO films prepared by PLD grow continuously, this occurs due to the presence of excited oxidizing species in the laser plasma eliminate the need for catalytic surface sites. Metal-insulator-semiconductor capacitor structures were fabricated on n-type GaN. A comparison of leakage current density for conventional and surfactant-assisted growth reveals a nearly two order of magnitude reduction in leakage current density for the smoother surfactant-assisted samples. Collectively, these data verify numerous predictions and calculations regarding the role of H-termination in regulating the habit of MgO crystals.

  7. Growth modes of InN(000-1) on GaN buffer layers on sapphire

    SciTech Connect (OSTI)

    Liu, Bing; Kitajima, Takeshi; Chen, Dongxue; Leone, Stephen R.

    2005-01-24

    In this work, using atomic force microscopy and scanning tunneling microscopy, we study the surface morphologies of epitaxial InN films grown by plasma-assisted molecular beam epitaxy with intervening GaN buffer layers on sapphire substrates. On smooth GaN buffer layers, nucleation and evolution of three-dimensional InN islands at various coverages and growth temperatures are investigated. The shapes of the InN islands are observed to be predominantly mesa-like with large flat (000-1) tops, which suggests a possible role of indium as a surfactant. Rough GaN buffer layers composed of dense small GaN islands are found to significantly improve uniform InN wetting of the substrates, on which atomically smooth InN films are obtained that show the characteristics of step-flow growth. Scanning tunneling microscopy imaging reveals the defect-mediated surface morphology of smooth InN films, including surface terminations of screw dislocations and a high density of shallow surface pits with depths less than 0.3 nm. The mechanisms of the three-dimensional island size and shape evolution and formation of defects on smooth surfaces are considered.

  8. Atmospheric Radiation Measurement (ARM) Data from Black Forest Germany for

    Office of Scientific and Technical Information (OSTI)

    the Convective and Orographically Induced Precipitation Study (COPS) () | Data Explorer Black Forest Germany for the Convective and Orographically Induced Precipitation Study (COPS) Title: Atmospheric Radiation Measurement (ARM) Data from Black Forest Germany for the Convective and Orographically Induced Precipitation Study (COPS) The primary goal of the ARM Program is to improve the treatment of cloud and radiation physics in global climate models in order to improve the climate simulation

  9. Impact of defects on the electrical transport, optical properties and failure mechanisms of GaN nanowires.

    SciTech Connect (OSTI)

    Armstrong, Andrew M.; Aubry, Sylvie; Shaner, Eric Arthur; Siegal, Michael P.; Li, Qiming; Jones, Reese E.; Westover, Tyler; Wang, George T.; Zhou, Xiao Wang; Talin, Albert Alec; Bogart, Katherine Huderle Andersen; Harris, C. Thomas; Huang, Jian Yu

    2010-09-01

    We present the results of a three year LDRD project that focused on understanding the impact of defects on the electrical, optical and thermal properties of GaN-based nanowires (NWs). We describe the development and application of a host of experimental techniques to quantify and understand the physics of defects and thermal transport in GaN NWs. We also present the development of analytical models and computational studies of thermal conductivity in GaN NWs. Finally, we present an atomistic model for GaN NW electrical breakdown supported with experimental evidence. GaN-based nanowires are attractive for applications requiring compact, high-current density devices such as ultraviolet laser arrays. Understanding GaN nanowire failure at high-current density is crucial to developing nanowire (NW) devices. Nanowire device failure is likely more complex than thin film due to the prominence of surface effects and enhanced interaction among point defects. Understanding the impact of surfaces and point defects on nanowire thermal and electrical transport is the first step toward rational control and mitigation of device failure mechanisms. However, investigating defects in GaN NWs is extremely challenging because conventional defect spectroscopy techniques are unsuitable for wide-bandgap nanostructures. To understand NW breakdown, the influence of pre-existing and emergent defects during high current stress on NW properties will be investigated. Acute sensitivity of NW thermal conductivity to point-defect density is expected due to the lack of threading dislocation (TD) gettering sites, and enhanced phonon-surface scattering further inhibits thermal transport. Excess defect creation during Joule heating could further degrade thermal conductivity, producing a viscous cycle culminating in catastrophic breakdown. To investigate these issues, a unique combination of electron microscopy, scanning luminescence and photoconductivity implemented at the nanoscale will be used in concert with sophisticated molecular-dynamics calculations of surface and defect-mediated NW thermal transport. This proposal seeks to elucidate long standing material science questions for GaN while addressing issues critical to realizing reliable GaN NW devices.

  10. Tellurium n-type doping of highly mismatched amorphous GaN1-xAsx alloys in plasma-assisted molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Novikov, S. V.; Ting, M.; Yu, K. M.; Sarney, W. L.; Martin, R. W.; Svensson, S. P.; Walukiewicz, W.; Foxon, C. T.

    2014-10-01

    In this paper we report our study on n-type Te doping of amorphous GaN1-xAsx layers grown by plasma-assisted molecular beam epitaxy. We have used a low temperature PbTe source as a source of tellurium. Reproducible and uniform tellurium incorporation in amorphous GaN1-xAsx layers has been successfully achieved with a maximum Te concentration of 9×10²⁰ cm⁻³. Tellurium incorporation resulted in n-doping of GaN1-xAsx layers with Hall carrier concentrations up to 3×10¹⁹ cm⁻³ and mobilities of ~1 cm²/V s. The optimal growth temperature window for efficient Te doping of the amorphous GaN1-xAsx layers has been determined.

  11. Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon

    SciTech Connect (OSTI)

    Heo, Junseok; Guo Wei; Bhattacharya, Pallab

    2011-01-10

    Optically pumped lasing at room temperature in a silicon based monolithic single GaN nanowire with a two-dimensional photonic crystal microcavity is demonstrated. Catalyst-free nanowires with low density ({approx}10{sup 8} cm{sup -2}) are grown on Si by plasma-assisted molecular beam epitaxy. High resolution transmission electron microscopy images reveal that the nanowires are of wurtzite structure and they have no observable defects. A single nanowire laser fabricated on Si is characterized by a lasing transition at {lambda}=371.3 nm with a linewidth of 0.55 nm. The threshold is observed at a pump power density of {approx}120 kW/cm{sup 2} and the spontaneous emission factor {beta} is estimated to be 0.08.

  12. Demonstration of forward inter-band tunneling in GaN by polarization engineering

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

    2011-12-05

    We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm{sup 2} at 10 mV, and 17.7 A/cm{sup 2} peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

  13. Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays

    SciTech Connect (OSTI)

    Gotschke, T.; Schumann, T.; Limbach, F.; Calarco, R.; Stoica, T.

    2011-03-07

    Molecular beam epitaxy (MBE) on patterned Si/AlN/Si(111) substrates was used to obtain regular arrays of uniform-size GaN nanowires (NWs). The silicon top layer has been patterned with e-beam lithography, resulting in uniform arrays of holes with different diameters (d{sub h}) and periods (P). While the NW length is almost insensitive to the array parameters, the diameter increases significantly with d{sub h} and P till it saturates at P values higher than 800 nm. A diffusion induced model was used to explain the experimental results with an effective diffusion length of the adatoms on the Si, estimated to be about 400 nm.

  14. Highly c-axis oriented GaN films grown on free-standing diamond substrates for high-power devices

    SciTech Connect (OSTI)

    Zhang, D. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Bian, J.M., E-mail: jmbian@dlut.edu.cn [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Qin, F.W.; Wang, J.; Pan, L. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Zhao, J.M. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Zhao, Y.; Bai, Y.Z. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China) [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China); Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China); Du, G.T. [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)] [School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116024 (China)

    2011-10-15

    Highlights: {yields} GaN films are deposited on diamond substrates by ECR-PEMOCVD. {yields} Influence of deposition temperature on the properties of samples is investigated. {yields} Properties of GaN films are dependent on the deposition temperature. -- Abstract: GaN films with highly c-axis preferred orientation are deposited on free-standing thick diamond films by low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). The TMGa and N{sub 2} are applied as precursors of Ga and N, respectively. The quality of as-grown GaN films are systematically investigated as a function of deposition temperature by means of X-ray diffraction (XRD) analysis, Hall Effect measurement (HL), room temperature photoluminescence (PL) and atomic force microscopy (AFM). The results show that the dense and uniformed GaN films with highly c-axis preferred orientation are successfully achieved on free-standing diamond substrates under optimized deposition temperature of 400 {sup o}C, and the room temperature PL spectra of the optimized GaN film show a intense ultraviolet near band edge emission and a weak yellow luminescence. The obtained GaN/diamond structure has great potential for the development of high-power semiconductor devices due to its excellent heat dissipation nature.

  15. Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

    SciTech Connect (OSTI)

    Nandi, R. Mohan, S. Major, S. S.; Srinivasa, R. S.

    2014-04-24

    ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

  16. The E2/M1 mixing ratio in the excitation of the {Delta} from polarized photo-reactions

    SciTech Connect (OSTI)

    The LEGS Collaboration

    1993-12-01

    In constituent quark models, a tensor interaction, mixing quark spins with their relative motion, is introduced to reproduce the observed baryon spectrum. This has a consequence completely analogous to the nuclear tensor force between the n and p in deuterium. A D state component is mixed into what would otherwise be a purely S-wave object. The D-wave component breaks spherical symmetry, resulting in a non-vanishing matrix element for the nucleon and a static quadrupole moment and deformation for its first excited state, the {Delta} resonance, at {approximately}325 MeV. The magnitude and sign of this D-state component are quite sensitive to the internal structure of the proton and have been of great interest in recent years. The intrinsic deformation of the spin 1/2 nucleon cannot be observed directly; it must be inferred from transition amplitudes such as N {yields} {Delta}. In a spherical bag model, the {Delta} is viewed as a pure quark-spin-flip transition proceeding only through M1 excitation. If there are D-state admixtures in the ground state of the nucleon and/or {Delta}, quadrupole excitation, in addition to spin-flip M1, is also allowed. The problem is to evaluate the relative magnitude of this E2 excitation in the presence of the dominant M1 transition. A variety of models predict this mixing ratio to be quite small, anywhere from {minus}0.9% to {minus}6%, so that a high degree of precision is demanded of experiment.

  17. Method of growing GaN films with a low density of structural defects using an interlayer

    DOE Patents [OSTI]

    Bourret-Courchesne, Edith D.

    2003-01-01

    A dramatic reduction of the dislocation density in GaN was obtained by insertion of a single thin interlayer grown at an intermediate temperature (IT-IL) after the growth of an initial grown at high temperature. A description of the growth process is presented with characterization results aimed at understanding the mechanisms of reduction in dislocation density. A large percentage of the threading dislocations present in the first GaN epilayer are found to bend near the interlayer and do not propagate into the top layer which grows at higher temperature in a lateral growth mode. TEM studies show that the mechanisms of dislocation reduction are similar to those described for the epitaxial lateral overgrowth process, however a notable difference is the absence of coalescence boundaries.

  18. Performance and breakdown characteristics of irradiated vertical power GaN P-i-N diodes

    SciTech Connect (OSTI)

    King, M. P.; Armstrong, A. M.; Dickerson, J. R.; Vizkelethy, G.; Fleming, R. M.; Campbell, J.; Wampler, W. R.; Kizilyalli, I. C.; Bour, D. P.; Aktas, O.; Nie, H.; Disney, D.; Wierer, Jr., J.; Allerman, A. A.; Moseley, M. W.; Kaplar, R. J.

    2015-10-29

    Electrical performance and defect characterization of vertical GaN P-i-N diodes before and after irradiation with 2.5 MeV protons and neutrons is investigated. Devices exhibit increase in specific on-resistance following irradiation with protons and neutrons, indicating displacement damage introduces defects into the p-GaN and n- drift regions of the device that impact on-state device performance. The breakdown voltage of these devices, initially above 1700 V, is observed to decrease only slightly for particle fluence <; 1013 cm-2. Furthermore, the unipolar figure of merit for power devices indicates that while the on-resistance and breakdown voltage degrade with irradiation, vertical GaN P-i-Ns remain superior to the performance of the best available, unirradiated silicon devices and on-par with unirradiated modern SiC-based power devices.

  19. Efficient Switches for Solar Power Conversion: Four Quadrant GaN Switch Enabled Three Phase Grid-Tied Microinverters

    SciTech Connect (OSTI)

    2012-02-13

    Solar ADEPT Project: Transphorm is developing power switches for new types of inverters that improve the efficiency and reliability of converting energy from solar panels into useable electricity for the grid. Transistors act as fast switches and control the electrical energy that flows in an electrical circuit. Turning a transistor off opens the circuit and stops the flow of electrical current; turning it on closes the circuit and allows electrical current to flow. In this way a transistor can be used to convert DC from a solar panel into AC for use in a home. Transphorm’s transistors will enable a single semiconductor device to switch electrical currents at high-voltage in both directions—making the inverter more compact and reliable. Transphorm is using Gallium Nitride (GaN) as a semiconductor material in its transistors instead of silicon, which is used in most conventional transistors, because GaN transistors have lower losses at higher voltages and switching frequencies.

  20. Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN

    Office of Scientific and Technical Information (OSTI)

    Sandia National Laboratories Exceptional service in the national interest SAND2015-0073C Growth and Band Offsets of Epitaxial Lanthanide Oxides on GaN and AlGaN 22 January 2015 Jon Ihlefeld, Michael Brumbach, Andrew A. Allerman, David R. Wheeler, and Stanley Atcitty This work was supported by the U.S. Department of Energy's Office of Electricity Delivery and Energy Reliability Program managed by Dr. Imre Gyuk and the Laboratory Directed Research and Development Program at Sandia National

  1. Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films

    SciTech Connect (OSTI)

    Bolat, Sami Tekcan, Burak; Ozgit-Akgun, Cagla; Biyikli, Necmi; Okyay, Ali Kemal

    2015-01-15

    Electronic and optoelectronic devices, namely, thin film transistors (TFTs) and metalsemiconductormetal (MSM) photodetectors, based on GaN films grown by hollow cathode plasma-assisted atomic layer deposition (PA-ALD) are demonstrated. Resistivity of GaN thin films and metal-GaN contact resistance are investigated as a function of annealing temperature. Effect of the plasma gas and postmetallization annealing on the performances of the TFTs as well as the effect of the annealing on the performance of MSM photodetectors are studied. Dark current to voltage and responsivity behavior of MSM devices are investigated as well. TFTs with the N{sub 2}/H{sub 2} PA-ALD based GaN channels are observed to have improved stability and transfer characteristics with respect to NH{sub 3} PA-ALD based transistors. Dark current of the MSM photodetectors is suppressed strongly after high-temperature annealing in N{sub 2}:H{sub 2} ambient.

  2. Elimination of surface band bending on N-polar InN with thin GaN capping

    SciTech Connect (OSTI)

    Kuzmík, J. Haščík, Š.; Kučera, M.; Kúdela, R.; Dobročka, E.; Adikimenakis, A.; Mičušík, M.; Gregor, M.; Plecenik, A.; Georgakilas, A.

    2015-11-09

    0.5–1 μm thick InN (0001) films grown by molecular-beam epitaxy with N- or In-polarity are investigated for the presence of native oxide, surface energy band bending, and effects introduced by 2 to 4 monolayers of GaN capping. Ex situ angle-resolved x-ray photo-electron spectroscopy is used to construct near-surface (GaN)/InN energy profiles, which is combined with deconvolution of In3d signal to trace the presence of InN native oxide for different types of polarity and capping. Downwards surface energy band bending was observed on bare samples with native oxide, regardless of the polarity. It was found that the In-polar InN surface is most readily oxidized, however, with only slightly less band bending if compared with the N-polar sample. On the other hand, InN surface oxidation was effectively mitigated by GaN capping. Still, as confirmed by ultra-violet photo-electron spectroscopy and by energy band diagram calculations, thin GaN cap layer may provide negative piezoelectric polarization charge at the GaN/InN hetero-interface of the N-polar sample, in addition to the passivation effect. These effects raised the band diagram up by about 0.65 eV, reaching a flat-band profile.

  3. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.

  4. Transistors for Electric Motor Drives: High-Performance GaN HEMT Modules for Agile Power Electronics

    SciTech Connect (OSTI)

    2010-09-01

    ADEPT Project: Transphorm is developing transistors with gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for a variety of applications, including electric motor drives which transmit power to a motor. A transistor acts like a switch, controlling the electrical energy that flows around an electrical circuit. Most transistors today use low-cost silicon semiconductors to conduct electrical energy, but silicon transistors don’t operate efficiently at high speeds and voltage levels. Transphorm is using GaN as a semiconductor material in its transistors because GaN performs better at higher voltages and frequencies, and it is more energy efficient than straight silicon. However, Transphorm is using inexpensive silicon as a base to help keep costs low. The company is also packaging its transistors with other electrical components that can operate quickly and efficiently at high power levels—increasing the overall efficiency of both the transistor and the entire motor drive.

  5. GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lin, Yong; Leung, Benjamin; Li, Qiming; Figiel, Jeffrey J.; Wang, George T.

    2015-07-14

    In this study, ammonia-based molecular beam epitaxy (NH3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH3-MBE grown GaN nanowires show more than an ordermore » of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

  6. The biomethanation of waste material; An example in Germany

    SciTech Connect (OSTI)

    Shin, K.C. )

    1991-01-01

    This paper reports that digester gas (biogas) can be generated from anaerobic decomposition of organic waste substances. In the municipal sewage treatment plants in Germany most of the gas production is used for heating and electric power generation. The major portion of solid waste shall be returned to the economical circuit as biogas, compost and recyclable materials.

  7. Radiation-induced defects in GaN bulk grown by halide vapor phase epitaxy

    SciTech Connect (OSTI)

    Duc, Tran Thien; Pozina, Galia; Son, Nguyen Tien; Janzn, Erik; Hemmingsson, Carl; Ohshima, Takeshi

    2014-09-08

    Defects induced by electron irradiation in thick free-standing GaN layers grown by halide vapor phase epitaxy were studied by deep level transient spectroscopy. In as-grown materials, six electron traps, labeled D2 (E{sub C}0.24?eV), D3 (E{sub C}0.60?eV), D4 (E{sub C}0.69?eV), D5 (E{sub C}0.96?eV), D7 (E{sub C}1.19?eV), and D8, were observed. After 2?MeV electron irradiation at a fluence of 1??10{sup 14?}cm{sup ?2}, three deep electron traps, labeled D1 (E{sub C}0.12?eV), D5I (E{sub C}0.89?eV), and D6 (E{sub C}1.14?eV), were detected. The trap D1 has previously been reported and considered as being related to the nitrogen vacancy. From the annealing behavior and a high introduction rate, the D5I and D6 centers are suggested to be related to primary intrinsic defects.

  8. Electrochemical removal of hydrogen atoms in Mg-doped GaN epitaxial layers

    SciTech Connect (OSTI)

    Lee, June Key E-mail: hskim7@jbnu.ac.kr; Hyeon, Gil Yong; Tawfik, Wael Z.; Choi, Hee Seok; Ryu, Sang-Wan; Jeong, Tak; Jung, Eunjin; Kim, Hyunsoo E-mail: hskim7@jbnu.ac.kr

    2015-05-14

    Hydrogen atoms inside of an Mg-doped GaN epitaxial layer were effectively removed by the electrochemical potentiostatic activation (EPA) method. The role of hydrogen was investigated in terms of the device performance of light-emitting diodes (LEDs). The effect of the main process parameters for EPA such as solution type, voltage, and time was studied and optimized for application to LED fabrication. In optimized conditions, the light output of 385-nm LEDs was improved by about 26% at 30 mA, which was caused by the reduction of the hydrogen concentration by ∼35%. Further removal of hydrogen seems to be involved in the breaking of Ga-H bonds that passivate the nitrogen vacancies. An EPA process with high voltage breaks not only Mg-H bonds that generate hole carriers but also Ga-H bonds that generate electron carriers, thus causing compensation that impedes the practical increase of hole concentration, regardless of the drastic removal of hydrogen atoms. A decrease in hydrogen concentration affects the current-voltage characteristics, reducing the reverse current by about one order and altering the forward current behavior in the low voltage region.

  9. Better Catalysts through Microscopy: Nanometer Scale M1/M2 Intergrown Heterostructure in Mo-V-M Complex Oxides

    SciTech Connect (OSTI)

    He, Qian; Woo, Jungwon; Belianinov, Alex; Guliants, Vadim V.; Borisevich, Albina Y

    2015-01-01

    In recent decades, catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. In this paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixture of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.

  10. Better Catalysts through Microscopy: Nanometer Scale M1/M2 Intergrown Heterostructure in Mo-V-M Complex Oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    He, Qian; Woo, Jungwon; Belianinov, Alex; Guliants, Vadim V.; Borisevich, Albina Y

    2015-01-01

    In recent decades, catalysis research has transformed from the predominantly empirical field to one where it is possible to control the catalytic properties via characterization and modification of the atomic-scale active centers. Many phenomena in catalysis, such as synergistic effect, however, transcend the atomic scale and also require the knowledge and control of the mesoscale structure of the specimen to harness. In this paper, we use our discovery of atomic-scale epitaxial interfaces in molybdenum vanadium based complex oxide catalysts systems (i.e., MoVMO, M = Ta, Te, Sb, Nb, etc.) to achieve control of the mesoscale structure of this complex mixturemore » of very different active phases. We can now achieve true epitaxial intergrowth between the catalytically critical M1 and M2 phases in the system that are hypothesized to have synergistic interactions, and demonstrate that the resulting catalyst has improved selectivity in the initial studies. Finally, we highlight the crucial role atomic scale characterization and mesoscale structure control play in uncovering the complex underpinnings of the synergistic effect in catalysis.« less

  11. Performance enhancement of GaN metalsemiconductormetal ultraviolet photodetectors by insertion of ultrathin interfacial HfO{sub 2} layer

    SciTech Connect (OSTI)

    Kumar, Manoj E-mail: aokyay@ee.bilkent.edu.tr; Tekcan, Burak; Okyay, Ali Kemal E-mail: aokyay@ee.bilkent.edu.tr

    2015-03-15

    The authors demonstrate improved device performance of GaN metalsemiconductormetal ultraviolet (UV) photodetectors (PDs) by ultrathin HfO{sub 2} (UT-HfO{sub 2}) layer on GaN. The UT-HfO{sub 2} interfacial layer is grown by atomic layer deposition. The dark current of the PDs with UT-HfO{sub 2} is significantly reduced by more than two orders of magnitude compared to those without HfO{sub 2} insertion. The photoresponsivity at 360?nm is as high as 1.42 A/W biased at 5 V. An excellent improvement in the performance of the devices is ascribed to allowed electron injection through UT-HfO{sub 2} on GaN interface under UV illumination, resulting in the photocurrent gain with fast response time.

  12. High-power blue laser diodes with indium tin oxide cladding on semipolar (202{sup }1{sup }) GaN substrates

    SciTech Connect (OSTI)

    Pourhashemi, A. Farrell, R. M.; Cohen, D. A.; Speck, J. S.; DenBaars, S. P.; Nakamura, S.

    2015-03-16

    We demonstrate a high power blue laser diode (LD) using indium tin oxide as a cladding layer on semipolar oriented GaN. These devices show peak output powers and external quantum efficiencies comparable to state-of-the-art commercial c-plane devices. Ridge waveguide LDs were fabricated on (202{sup }1{sup }) oriented GaN substrates using InGaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 451?nm at room temperature, an output power of 2.52?W and an external quantum efficiency of 39% were measured from a single facet under a pulsed injection current of 2.34?A. The measured differential quantum efficiency was 50%.

  13. Highly mismatched crystalline and amorphous GaN(1-x)As(x) alloys in the whole composition range

    SciTech Connect (OSTI)

    Yu, K. M.; Novikov, S. V.; Broesler, R.; Demchenko, I. N.; Denlinger, J. D.; Liliental-Weber, Z.; Luckert, F.; Martin, R. W.; Walukiewicz, W.; Foxon, C. T.

    2009-08-29

    Alloying is a commonly accepted method to tailor properties of semiconductor materials for specific applications. Only a limited number of semiconductor alloys can be easily synthesized in the full composition range. Such alloys are, in general, formed of component elements that are well matched in terms of ionicity, atom size, and electronegativity. In contrast there is a broad class of potential semiconductor alloys formed of component materials with distinctly different properties. In most instances these mismatched alloys are immiscible under standard growth conditions. Here we report on the properties of GaN1-xAsx, a highly mismatched, immiscible alloy system that was successfully synthesized in the whole composition range using a nonequilibrium low temperature molecular beam epitaxy technique. The alloys are amorphous in the composition range of 0.17GaN to ~;;0.8 eV at x~;;0.85. The reduction in the band gap can be attributed primarily to the downward movement of the conduction band for alloys with x>0.2, and to the upward movement of the valence band for alloys with x<0.2. The unique features of the band structure offer an opportunity of using GaN1-xAsx alloys for various types of solar power conversion devices.

  14. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

    SciTech Connect (OSTI)

    Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; Dayeh, Shadi A.

    2015-11-27

    Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.

  15. Strong geometrical effects in submillimeter selective area growth and light extraction of GaN light emitting diodes on sapphire

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; Dayeh, Shadi A.

    2015-11-27

    Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO2. We show that the mask opening diameter leads to as much as 4 times increase inmore » the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.« less

  16. Increased p-type conductivity through use of an indium surfactant in the growth of Mg-doped GaN

    SciTech Connect (OSTI)

    Kyle, Erin C. H. Kaun, Stephen W.; Young, Erin C.; Speck, James S.

    2015-06-01

    We have examined the effect of an indium surfactant on the growth of p-type GaN by ammonia-based molecular beam epitaxy. p-type GaN was grown at temperatures ranging from 700 to 780 °C with and without an indium surfactant. The Mg concentration in all films in this study was 4.5–6 × 10{sup 19} cm{sup −3} as measured by secondary ion mass spectroscopy. All p-type GaN films grown with an indium surfactant had higher p-type conductivities and higher hole concentrations than similar films grown without an indium surfactant. The lowest p-type GaN room temperature resistivity was 0.59 Ω-cm, and the highest room temperature carrier concentration was 1.6 × 10{sup 18} cm{sup −3}. Fits of the temperature-dependent carrier concentration data showed a one to two order of magnitude lower unintentional compensating defect concentration in samples grown with the indium surfactant. Samples grown at higher temperature had a lower active acceptor concentration. Improvements in band-edge luminescence were seen by cathodoluminescence for samples grown with the indium surfactant, confirming the trends seen in the Hall data.

  17. Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Brubaker, Matt D.; Rourke, Devin M.; Sanford, Norman A.; Bertness, Kris A.; Bright, Victor M.

    2011-09-01

    Low-temperature AlN buffer layers grown via plasma-assisted molecular beam epitaxy on Si (111) were found to significantly affect the subsequent growth morphology of GaN nanowires. The AlN buffer layers exhibited nanowire-like columnar protrusions, with their size, shape, and tilt determined by the AlN V/III flux ratio. GaN nanowires were frequently observed to adopt the structural characteristics of the underlying AlN columns, including the size and the degree of tilt. Piezoresponse force microscopy and polarity-sensitive etching indicate that the AlN films and the protruding columns have a mixed crystallographic polarity. Convergent beam electron diffraction indicates that GaN nanowires are Ga-polar, suggesting that Al-polar columns are nanowire nucleation sites for Ga-polar nanowires. GaN nanowires of low density could be grown on AlN buffers that were predominantly N-polar with isolated Al-polar columns, indicating a high growth rate for Ga-polar nanowires and suppressed growth of N-polar nanowires under typical growth conditions. AlN buffer layers grown under slightly N-rich conditions (V/III flux ratio = 1.0 to 1.3) were found to provide a favorable growth surface for low-density, coalescence-free nanowires.

  18. Vehicle Technologies Office Merit Review 2014: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about Advanced low-cost SIC and GaN wide...

  19. Vehicle Technologies Office Merit Review 2015: Advanced Low-Cost SiC and GaN Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction Drives

    Broader source: Energy.gov [DOE]

    Presentation given by APEI Inc. at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about advanced low-cost SiC and GaN wide...

  20. Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

    SciTech Connect (OSTI)

    Young, Erin C.; Wu Feng; Haeger, Daniel A.; Nakamura, Shuji; Denbaars, Steven P.; Cohen, Daniel A.; Speck, James S.; Romanov, Alexey E.

    2012-10-01

    In this Letter, we report on the growth and properties of relaxed, compositionally graded Al{sub x}Ga{sub 1-x}N buffer layers on freestanding semipolar (2021) GaN substrates. Continuous and step compositional grades with Al concentrations up to x = 0.61 have been achieved, with emission wavelengths in the mid-ultraviolet region as low as 265 nm. Coherency stresses were relaxed progressively throughout the grades by misfit dislocation generation via primary (basal) slip and secondary (non-basal) slip systems. Threading dislocation densities in the final layers of the grades were less than 10{sup 6}/cm{sup 2} as confirmed by plan-view transmission electron microscopy and cathodoluminescence studies.

  1. Phase-field simulations of GaN growth by selective area epitaxy from complex mask geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Thornton, Katsuyo; Coltrin, Michael E.; Han, Jung

    2015-05-21

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. The model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. The model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  2. Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks andmore » processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.« less

  3. Polarity characterization by anomalous x-ray dispersion of ZnO films and GaN lateral polar structures

    SciTech Connect (OSTI)

    Shelton, Christopher T.; Sachet, Edward; Paisley, Elizabeth A.; Hoffmann, Marc P.; Rajan, Joseph; Collazo, Ramn; Sitar, Zlatko; Maria, Jon-Paul

    2014-01-28

    We demonstrate the use of anomalous x-ray scattering of constituent cations at their absorption edge, in a conventional Bragg-Brentano diffractometer, to measure absolutely and quantitatively the polar orientation and polarity fraction of unipolar and mixed polar wurtzitic crystals. In one set of experiments, the gradual transition between c+ and c? polarity of epitaxial ZnO films on sapphire as a function of MgO buffer layer thickness is monitored quantitatively, while in a second experiment, we map the polarity of a lateral polar homojunction in GaN. The dispersion measurements are compared with piezoforce microscopy images, and we demonstrate how x-ray dispersion and scanning probe methods can provide complementary information that can discriminate between polarity fractions at a material surface and polarity fractions averaged over the film bulk.

  4. Germany, garbage, and the green dot: Challenging the throwaway society

    SciTech Connect (OSTI)

    Fishbein, B.K.

    1994-09-01

    For US policymakers and citizens who are grappling with the question of how to handle this country's mounting municipal garbage and commercial wastes, this report offers a revolutionary approach taken by Germany to promote both recycling and source reduction. The sweeping new German legislation is stimulating industry efforts to reduce packaging and product waste by requiring that the businesses producing packages and products be financially responsible for taking back their used materials and recycling, reusing or disposing of them. This report describes what Germans have done in solid waste policies, the difficulties they are confronting and the impact on wastes to date. It discusses the environmental problems that the US and other industrialized countries face, identifies practical solutions: programs and policies that work to conserve our valuable air, land, water and natural resources and enable us to live and do business less wastefully.

  5. Large Scale Wind and Solar Integration in Germany

    SciTech Connect (OSTI)

    Ernst, Bernhard; Schreirer, Uwe; Berster, Frank; Pease, John; Scholz, Cristian; Erbring, Hans-Peter; Schlunke, Stephan; Makarov, Yuri V.

    2010-02-28

    This report provides key information concerning the German experience with integrating of 25 gigawatts of wind and 7 gigawatts of solar power capacity and mitigating its impacts on the electric power system. The report has been prepared based on information provided by the Amprion GmbH and 50Hertz Transmission GmbH managers and engineers to the Bonneville Power Administration (BPA) and Pacific Northwest National Laboratory representatives during their visit to Germany in October 2009. The trip and this report have been sponsored by the BPA Technology Innovation office. Learning from the German experience could help the Bonneville Power Administration engineers to compare and evaluate potential new solutions for managing higher penetrations of wind energy resources in their control area. A broader dissemination of this experience will benefit wind and solar resource integration efforts in the United States.

  6. East Germany struggles to clean its air and water

    SciTech Connect (OSTI)

    Cherfas, J.

    1990-04-20

    East Germans are working hard on a strategy to improve their polluted environment. Industrial plants are largely responsible for this pollution. A shroud of haze veils the suburbs of East Berlin. Far to the south the giant power plants around Leipzig pour more dust and sulfur dioxide into the air than in any other country in Europe. More than 90% of the country's electricity comes from brown coal, accompanied by prodigious quantities of dust and sulfur dioxide: almost 6 million tones of sulfur dioxide and more than 2 million tones of dust in 1988. East Germany enjoys some of the cheapest energy in the world, and the world's third highest energy consumption per capita, behind the United States, and Canada. Naturally, is also suffers air quality and health problems. The country is trying to cut down on consumption and clean up on generation. Actually, water quality is the number one priority, which unlike air is in very short supply.

  7. Proposals in for Czech firms; cooperation likely with eastern Germany

    SciTech Connect (OSTI)

    Alperowicz, N.

    1993-02-10

    Two Western groups - Shell and a consortium made up of Agip, Conoco, and Total - have offered to buy the refining operations of Chemopetrol Litvinov and Kaucuk Kralupy, both in the Czech republic. Meanwhile, Amoco, Neste, and PCD are looking at the possibility of acquiring some of the plastics plants at Litvinov. Amoco is interested in the polypropylene operations, Neste in polyethylene, and PCD in both. The two Czech firms are included in the second wave of privatization, which will begin in midyear. So far, there have been no offers for the 80,000-m.t./year polystyrene and 60,000-m.t./year styrene butadiene rubber operations belonging to Kralupy, although Atochem representatives recently visited the plants. Litvinov is carrying out revamping operations at its core unit, a 12-year-old, 450,000-m.t./year ethylene plant. The plant, currently running at 400,000 m.t./year, supplies downstream plants, Neratovice, and sells on the export markets. An existing ethylene pipeline between Litvinov and Bohlen in eastern Germany, which used to supply an average 100,000 m.t./year of ethylene to Bohen in exchange for naphtha, is virtually unused. One proposal involves reactivating this exchange to secure ethylene feedstock for plants in eastern Germany. According to some sources, a preliminary decision has been made to shut down the 100,000-m.t./year ethylene plant at Leuna and possibly to expand the Bohlen cracker by 100,000 m.t./year, to 400,000 m.t./year by the late 1990s.

  8. Temperature dependent dielectric function and the E{sub 0} critical points of hexagonal GaN from 30 to 690 K

    SciTech Connect (OSTI)

    Kim, Tae Jung Hwang, Soon Yong; Byun, Jun Seok; Barange, Nilesh S.; Park, Han Gyeol; Dong Kim, Young

    2014-02-15

    The complex dielectric function ? and the E{sub 0} excitonic and band-edge critical-point structures of hexagonal GaN are reported for temperatures from 30 to 690 K and energies from 0.74 to 6.42 eV, obtained by rotating-compensator spectroscopic ellipsometry on a 1.9 ?m thick GaN film deposited on a c-plane (0001) sapphire substrate by molecular beam epitaxy. Direct inversion and B-splines in a multilayer-structure calculation were used to extract the optical properties of the film from the measured pseudodielectric function ???. At low temperature sharp E{sub 0} excitonic and critical-point interband transitions are separately observed. Their temperature dependences were determined by fitting the data to the empirical Varshni relation and the phenomenological expression that contains the Bose-Einstein statistical factor.

  9. Structural anisotropic properties of a-plane GaN epilayers grown on r-plane sapphire by molecular beam epitaxy

    SciTech Connect (OSTI)

    Lotsari, A.; Kehagias, Th.; Katsikini, M.; Arvanitidis, J.; Ves, S.; Komninou, Ph.; Dimitrakopulos, G. P.; Tsiakatouras, G.; Tsagaraki, K.; Georgakilas, A.; Christofilos, D.

    2014-06-07

    Heteroepitaxial non-polar III-Nitride layers may exhibit extensive anisotropy in the surface morphology and the epilayer microstructure along distinct in-plane directions. The structural anisotropy, evidenced by the M-shape dependence of the (112{sup }0) x-ray rocking curve widths on the beam azimuth angle, was studied by combining transmission electron microscopy observations, Raman spectroscopy, high resolution x-ray diffraction, and atomic force microscopy in a-plane GaN epilayers grown on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (PAMBE). The structural anisotropic behavior was attributed quantitatively to the high dislocation densities, particularly the Frank-Shockley partial dislocations that delimit the I{sub 1} intrinsic basal stacking faults, and to the concomitant plastic strain relaxation. On the other hand, isotropic samples exhibited lower dislocation densities and a biaxial residual stress state. For PAMBE growth, the anisotropy was correlated to N-rich (or Ga-poor) conditions on the surface during growth, that result in formation of asymmetric a-plane GaN grains elongated along the c-axis. Such conditions enhance the anisotropy of gallium diffusion on the surface and reduce the GaN nucleation rate.

  10. A complex investigation of building sandstones from Saxony (Germany)

    SciTech Connect (OSTI)

    Goetze, Jens Siedel, Heiner

    2007-11-15

    The present paper provides a methodology for the investigation and characterization of building sandstones. This analytical scheme was designed for distinguishing mature arenites, which in general show very similar properties and are difficult to distinguish. This is shown for Cretaceous sandstones from various occurrences in Saxony (Germany), which have been used for centuries as building materials. The procedure is mainly based on the combination of macroscopic rock description, thin section polarizing microscopy (phase composition, texture, grain-size distribution) and cathodoluminescence (CL) microscopy (quartz types, feldspar and kaolinite content) coupled with image analysis, scanning electron microscopy (accessories, pore cement, diagenetic grain surface features), and analysis of pore space data. Sometimes, additional data from X-ray diffraction or chemical analyses (major and trace elements) can be used. Especially in the case of quartz rich arenites, CL is a powerful tool for provenance analysis. The detailed analysis of sandstone material in most cases allows us to assign historically used building material to a specific sandstone occurrence. These results are important for both interpreting the weathering behaviour of the building material and the conservation, reconstruction and stone replacement of historical monuments.

  11. Microsoft Word - MOU Between DOE and Germany 9-15-11.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Information CARLSBAD, N.M., September 15, 2011 - A high-ranking energy official from Germany formalized a partnership between her country and the United States during a recent...

  12. Why Are Resiential PV Prices in Germany So Much Lower Than in the United States?

    Broader source: Energy.gov [DOE]

    The U.S. Department of Energy (DOE) SunShot Initiative, in conjunction with the Lawrence Berkeley National Laboratory (LBNL) discusses the installed price of residential PV being significantly lower in Germany than in the United States.

  13. Psychological effects of sustained operations in a simulated NBC (nuclear, biological or chemical) environment on M1 tank crews. Technical report, May-June 1985

    SciTech Connect (OSTI)

    Munro, I.; Rauch, T.M.; Banderet, L.E.; Lussier, A.R.; Tharion, W.J.

    1987-07-03

    Forty-eight M1 crewmen were tested in a temperate climate under conditions simulating 72-hour operations in an area contaminated with chemical agents. Over 50% of the crewman voluntarily withdrew from the test, and maximum unit endurance did not exceed 32 hours. Two problems were found to be related to endurance failure. Soldiers who withdrew reported more intense symptoms associated with respiratory distress than did those who remained in the test. In addition, soldiers who withdrew experienced greater cognitive difficulties. Near-term countermeasures, assessed in some test iterations, showed no significant endurance-extending effects. Alternative solutions based on the identified problems were proposed.

  14. Safety Analysis Report for Packaging (SARP): Model AL-M1 nuclear packaging (DOE C of C No. USA/9507/BLF)

    SciTech Connect (OSTI)

    Coleman, H.L.; Whitney, M.A.; Williams, M.A.; Alexander, B.M.; Shapiro, A.

    1987-11-24

    This Safety Analysis Report for Packaging (SARP) satisfies the request of the US Department of Energy for a formal safety analysis of the shipping container identified as USA/9507/BLF, also called AL-M1, configuration 5. This report makes available to all potential users the technical information and the limits pertinent to the construction and use of the shipping containers. It includes discussions of structural integrity, thermal resistance, radiation shielding and radiological safety, nuclear criticality safety, and quality control. A complete physical and technical description of the package is presented. The package consists of an inner container centered within an insulated steel drum. The configuration-5 package contains tritiated water held on sorbent material. There are two other AL-M1 packages, designated configurations 1 and 3. These use the same insulated outer drum, but licensing of these containers will not be addressed in this SARP. Design and development considerations, the tests and evaluations required to prove the ability of the container to withstand normal transportation conditions, and the sequence of four hypothetical accident conditions (free drop, puncture, thermal, and water immersion) are discussed. Tables, graphs, dimensional sketches, photographs, technical references, loading and shipping procedures, Monsanto Research Corporation-Mound experience in using the containers, and a copy of the DOE/OSD/ALO Certificate of Compliance are included.

  15. Design, fabrication, and performance analysis of GaN vertical electron transistors with a buried p/n junction

    SciTech Connect (OSTI)

    Yeluri, Ramya Lu, Jing; Keller, Stacia; Mishra, Umesh K.; Hurni, Christophe A.; Browne, David A.; Speck, James S.; Chowdhury, Srabanti

    2015-05-04

    The Current Aperture Vertical Electron Transistor (CAVET) combines the high conductivity of the two dimensional electron gas channel at the AlGaN/GaN heterojunction with better field distribution offered by a vertical design. In this work, CAVETs with buried, conductive p-GaN layers as the current blocking layer are reported. The p-GaN layer was regrown by metalorganic chemical vapor deposition and the subsequent channel regrowth was done by ammonia molecular beam epitaxy to maintain the p-GaN conductivity. Transistors with high ON current (10.9?kA/cm{sup 2}) and low ON-resistance (0.4 m? cm{sup 2}) are demonstrated. Non-planar selective area regrowth is identified as the limiting factor to transistor breakdown, using planar and non-planar n/p/n structures. Planar n/p/n structures recorded an estimated electric field of 3.1 MV/cm, while non-planar structures showed a much lower breakdown voltage. Lowering the p-GaN regrowth temperature improved breakdown in the non-planar n/p/n structure. Combining high breakdown voltage with high current will enable GaN vertical transistors with high power densities.

  16. Measurement of the hot electron mean free path and the momentum relaxation rate in GaN

    SciTech Connect (OSTI)

    Suntrup, Donald J.; Gupta, Geetak; Li, Haoran; Keller, Stacia; Mishra, Umesh K.

    2014-12-29

    We present a method for measuring the mean free path and extracting the momentum relaxation time of hot electrons in GaN using the hot electron transistor (HET). In this device, electrons are injected over a high energy emitter barrier into the base where they experience quasi-ballistic transport well above the conduction band edge. After traversing the base, high energy electrons either surmount the base-collector barrier and become collector current or reflect off the barrier and become base current. We fabricate HETs with various base thicknesses and measure the common emitter transfer ratio (α) for each device. The mean free path is extracted by fitting α to a decaying exponential as a function of base width and the relaxation time is computed using a suitable injection velocity. For devices with an injection energy of ∼1 eV, we measure a hot electron mean free path of 14 nm and calculate a momentum relaxation time of 16 fs. These values are in agreement with theoretical calculations where longitudinal optical phonon scattering is the dominant momentum relaxation mechanism.

  17. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth E-mail: rajan@ece.osu.edu

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5??10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  18. Propane ammoxidation over the Mo-V-Te-Nb-O M1 phase: Reactivity of surface cations in hydrogen abstraction steps

    SciTech Connect (OSTI)

    Muthukumar, Kaliappan; Yu, Junjun; Xu, Ye; Guliants, Vadim V.

    2011-01-01

    Density functional theory calculations (GGA-PBE) have been performed to investigate the adsorption of C3 (propane, isopropyl, propene, and allyl) and H species on the proposed active center present in the surface ab planes of the bulk Mo-V-Te-Nb-O M1 phase in order to better understand the roles of the different surface cations in propane ammoxidation. Modified cluster models were employed to isolate the closely spaced V=O and Te=O from each other and to vary the oxidation state of the V cation. While propane and propene adsorb with nearly zero adsorption energy, the isopropyl and allyl radicals bind strongly to V=O and Te=O with adsorption energies, {Delta}E, being {le} -1.75 eV, but appreciably more weakly on other sites, such as Mo=O, bridging oxygen (Mo-O-V and Mo-O-Mo), and empty metal apical sites ({Delta}E > -1 eV). Atomic H binds more strongly to Te = O ({Delta}E {le} -3 eV) than to all the other sites, including V = O ({Delta}E = -2.59 eV). The reduction of surface oxo groups by dissociated H and their removal as water are thermodynamically favorable except when both H atoms are bonded to the same Te=O. Consistent with the strong binding of H, Te=O is markedly more active at abstracting the methylene H from propane (E{sub a} {le} 1.01 eV) than V = O (E{sub a} = 1.70 eV on V{sup 5+} = O and 2.13 eV on V{sup 4+} = O). The higher-than-observed activity and the loose binding of Te = O moieties to the mixed metal oxide lattice of M1 raise the question of whether active Te = O groups are in fact present in the surface ab planes of the M1 phase under propane ammoxidation conditions.

  19. Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

    SciTech Connect (OSTI)

    Szyszka, A. E-mail: adam.szyszka@pwr.wroc.pl; Haeberlen, M.; Storck, P.; Thapa, S. B.; Schroeder, T.

    2014-08-28

    Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. As revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated thatwith respect to the basic GaN/oxide/Si system without DBRthe insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.

  20. STEM HAADF Image Simulation of the Orthorhombic M1 Phase in the Mo-V-Nb-Te-O Propane Oxidation Catalyst

    SciTech Connect (OSTI)

    D Blom; X Li; S Mitra; T Vogt; D Buttrey

    2011-12-31

    A full frozen phonon multislice simulation of high angle annular dark field scanning transmission electron microscopy (HAADF STEM) images from the M1 phase of the Mo-V-Nb-Te-O propane oxidation catalyst has been performed by using the latest structural model obtained using the Rietveld method. Simulated contrast results are compared with experimental HAADF images. Good agreement is observed at ring sites, however significant thickness dependence is noticed at the linking sites. The remaining discrepancies between the model based on Rietveld refinement and image simulations indicate that the sampling of a small volume element in HAADF STEM and averaging elemental contributions of a disordered site in a crystal slab by using the virtual crystal approximation might be problematic, especially if there is preferential Mo/V ordering near the (001) surface.

  1. Photo-induced water oxidation at the aqueous GaN (101¯0) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (101¯0) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation ofmore » free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of –Ga-OH to –Ga-O˙⁻ requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface –NH sites is thermodynamically more favorable than –OH sites. However, proton transfer from –OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (101¯0)–water interface. We find that the deprotonation of surface –OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.« less

  2. Effects of substrate temperature, substrate orientation, and energetic atomic collisions on the structure of GaN films grown by reactive sputtering

    SciTech Connect (OSTI)

    Schiaber, Ziani S.; Lisboa-Filho, Paulo N.; Silva, Jos H. D. da; Leite, Douglas M. G.; Bortoleto, Jos R. R.

    2013-11-14

    The combined effects of substrate temperature, substrate orientation, and energetic particle impingement on the structure of GaN films grown by reactive radio-frequency magnetron sputtering are investigated. Monte-Carlo based simulations are employed to analyze the energies of the species generated in the plasma and colliding with the growing surface. Polycrystalline films grown at temperatures ranging from 500 to 1000 C clearly showed a dependence of orientation texture and surface morphology on substrate orientation (c- and a-plane sapphire) in which the (0001) GaN planes were parallel to the substrate surface. A large increase in interplanar spacing associated with the increase in both a- and c-parameters of the hexagonal lattice and a redshift of the optical bandgap were observed at substrate temperatures higher than 600 C. The results showed that the tensile stresses produced during the film's growth in high-temperature deposition ranges were much larger than the expected compressive stresses caused by the difference in the thermal expansion coefficients of the film and substrate in the cool-down process after the film growth. The best films were deposited at 500 C, 30 W and 600 C, 45 W, which corresponds to conditions where the out diffusion from the film is low. Under these conditions the benefits of the temperature increase because of the decrease in defect density are greater than the problems caused by the strongly strained lattice that occurr at higher temperatures. The results are useful to the analysis of the growth conditions of GaN films by reactive sputtering.

  3. Photo-induced water oxidation at the aqueous GaN (1010) interface: Deprotonation kinetics of the first proton-coupled electron-transfer step

    SciTech Connect (OSTI)

    Ertem, Mehmed Z.; Kharche, Neerav; Batista, Victor S.; Hybertsen, Mark S.; Tully, John C.; Muckerman, James T.

    2015-03-12

    Photoeclectrochemical water splitting plays a key role in a promising path to the carbon-neutral generation of solar fuels. Wurzite GaN and its alloys (e.g., GaN/ZnO and InGaN) are demonstrated photocatalysts for water oxidation, and they can drive the overall water splitting reaction when coupled with co-catalysts for proton reduction. In the present work, we investigate the water oxidation mechanism on the prototypical GaN (1010) surface using a combined ab initio molecular dynamics and molecular cluster model approach taking into account the role of water dissociation and hydrogen bonding within the first solvation shell of the hydroxylated surface. The investigation of free-energy changes for the four proton-coupled electron-transfer (PCET) steps of the water oxidation mechanism shows that the first PCET step for the conversion of Ga-OH to Ga-O?? requires the highest energy input. We further examine the sequential PCETs, with the proton transfer (PT) following the electron transfer (ET), and find that photo-generated holes localize on surface NH sites is thermodynamically more favorable than OH sites. However, proton transfer from OH sites with subsequent localization of holes on oxygen atoms is kinetically favored owing to hydrogen bonding interactions at the GaN (1010)water interface. We find that the deprotonation of surface OH sites is the limiting factor for the generation of reactive oxyl radical ion intermediates and consequently for water oxidation.

  4. Brine migration test for Asse Mine, Federal Republic of Germany: final test plan

    SciTech Connect (OSTI)

    Not Available

    1983-07-01

    The United States and the Federal Republic of Germany (FRG) will conduct a brine migration test in the Asse Salt Mine in the FRG as part of the US/FRG Cooperative Radioactive Waste Management Agreement. Two sets of two tests each will be conducted to study both liquid inclusion migration and vapor migration in the two salt types chosen for the experiments: (1) pure salt, for its characteristics similar to the salt that might occur in potential US repositories, and (2) transitional salt, for its similarity to the salt that might occur in potential repositories in Germany.

  5. Comparing Germany's and California's Interconnection Processes for PV Systems (White Paper)

    SciTech Connect (OSTI)

    Tweedie, A.; Doris, E.

    2011-07-01

    Establishing interconnection to the grid is a recognized barrier to the deployment of distributed energy generation. This report compares interconnection processes for photovoltaic projects in California and Germany. This report summarizes the steps of the interconnection process for developers and utilities, the average length of time utilities take to process applications, and paperwork required of project developers. Based on a review of the available literature, this report finds that while the interconnection procedures and timelines are similar in California and Germany, differences in the legal and regulatory frameworks are substantial.

  6. Adsorption of propane, isopropyl, and hydrogen on cluster models of the M1 phase of Mo-V-Te-Nb-O mixed metal oxide catalyst

    SciTech Connect (OSTI)

    Govindasamy, Agalya; Muthukumar, Kaliappan; Yu, Junjun; Xu, Ye; Guliants, Vadim V.

    2010-01-01

    The Mo-V-Te-Nb-O mixed metal oxide catalyst possessing the M1 phase structure is uniquely capable of directly converting propane into acrylonitrile. However, the mechanism of this complex eight-electron transformation, which includes a series of oxidative H-abstraction and N-insertion steps, remains poorly understood. We have conducted a density functional theory study of cluster models of the proposed active and selective site for propane ammoxidation, including the adsorption of propane, isopropyl (CH{sub 3}CHCH{sub 3}), and H which are involved in the first step of this transformation, that is, the methylene C-H bond scission in propane, on these active site models. Among the surface oxygen species, the telluryl oxo (Te=O) is found to be the most nucleophilic. Whereas the adsorption of propane is weak regardless of the MO{sub x} species involved, isopropyl and H adsorption exhibits strong preference in the order of Te=O > V=O > bridging oxygens > empty Mo apical site, suggesting the importance of TeO{sub x} species for H abstraction. The adsorption energies of isopropyl and H and consequently the reaction energy of the initial dehydrogenation of propane are strongly dependent on the number of ab planes included in the cluster, which points to the need to employ multilayer cluster models to correctly capture the energetics of surface chemistry on this mixed metal oxide catalyst.

  7. Implementing the Espoo Convention in transboundary EIA between Germany and Poland

    SciTech Connect (OSTI)

    Albrecht, Eike

    2008-08-15

    Poland and Germany have a long common border which leads to the necessity to cooperate and consult each other in the case of large-scale projects or infrastructure measures likely to cause negative transboundary effects on the environment. There are already binding provisions for transboundary EIA. In the area of the UN Economic Commission for Europe (UNECE), transboundary EIA is intended to be legally binding for the Member States by the Espoo Convention which was ratified by Germany 8.8.2002 and by Poland 12.6.1997. Due to corresponding directives, the same is applicable in the context of the European Union. In German legislation, this issue is regulated by Art. 8 of the Federal EIA Act in regard to transboundary participation of administration and by Art. 9a in respect of transboundary public participation. However, these EIA regulations on transboundary participation do not surpass a certain detail level, as they have to be applied between Germany and all neighbouring states. Therefore both countries decided to agree on more detailed provisions in particular regarding procedural questions. During the 12th German-Polish Environmental Council, Germany and Poland reached an agreement on 11.4.2006 in Neuhardenberg/Brandenburg an agreement upon the implementation of the Espoo Convention, the so called Neuhardenberg Agreement. This article assesses the agreement under consideration of already existing law and discusses major improvements and problems.

  8. DOE Signs Notice to Prepare Environmental Assessment on Proposed Project with Germany

    Broader source: Energy.gov [DOE]

    WASHINGTON, D.C. – The Energy Department recently signed a notice of intent to prepare an environmental assessment to analyze the potential environmental impacts from a proposed project to accept used nuclear fuel from the Federal Republic of Germany at DOE’s Savannah River Site (SRS) for processing and disposition.

  9. Proceedings of Workshop on Uranium Production Environmental Restoration: An exchange between the United States and Germany

    SciTech Connect (OSTI)

    Not Available

    1993-12-31

    Scientists, engineers, elected officials, and industry regulators from the United, States and Germany met in Albuquerque, New Mexico, August 16--20, 1993, in the first joint international workshop to discuss uranium tailings remediation. Entitled ``Workshop on Uranium Production Environmental Restoration: An Exchange between the US and Germany,`` the meeting was hosted by the US Department of Energy`s (DOE) Uranium Mill Tailings Remedial Action (UMTRA) Project. The goal of the workshop was to further understanding and communication on the uranium tailings cleanup projects in the US and Germany. Many communities around the world are faced with an environmental legacy -- enormous quantities of hazardous and low-level radioactive materials from the production of uranium used for energy and nuclear weapons. In 1978, the US Congress passed the Uranium Mill Tailings Radiation Control Act. Title I of the law established a program to assess the tailings at inactive uranium processing sites and provide a means for joint federal and state funding of the cleanup efforts at sites where all or substantially all of the uranium was produced for sale to a federal agency. The UMTRA Project is responsible for the cleanup of 24 sites in 10 states. Germany is facing nearly identical uranium cleanup problems and has established a cleanup project. At the workshop, participants had an opportunity to interact with a broad cross section of the environmental restoration and waste disposal community, discuss common concerns and problems, and develop a broader understanding of the issues. Abstracts are catalogued individually for the data base.

  10. Donor impurity states and related terahertz range nonlinear optical response in GaN cylindrical quantum wires: Effects of external electric and magnetic fields

    SciTech Connect (OSTI)

    Correa, J. D.; Mora-Ramos, M. E.; Duque, C. A.

    2014-06-07

    We report a study on the optical absorption coefficient associated to hydrogenic impurity interstate transitions in zinc-blende GaN quantum wires of cylindrical shape taking into account the effects of externally applied static electric and magnetic fields. The electron states emerge within the effective mass approximation, via the exact diagonalization of the donor-impurity Hamiltonian with parabolic confinement and external field effects. The nonlinear optical absorption is calculated using a recently derived expression for the dielectric susceptibility, obtained via a nonperturbative solution of the density-matrix Bloch equation. Our results show that this treatment eliminates not only the intensity-dependent bleaching effect but also the change in sign of the nonlinear contribution due to the combined effect of asymmetric impurity location and the applied electric field.

  11. 4th PV Performance Modeling and Monitoring Workshop in Cologne, Germany,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    October 22-23, 2015 PV Performance Modeling and Monitoring Workshop in Cologne, Germany, October 22-23, 2015 - Sandia Energy Energy Search Icon Sandia Home Locations Contact Us Employee Locator Energy & Climate Secure & Sustainable Energy Future Stationary Power Energy Conversion Efficiency Solar Energy Wind Energy Water Power Supercritical CO2 Geothermal Natural Gas Safety, Security & Resilience of the Energy Infrastructure Energy Storage Nuclear Power & Engineering Grid

  12. Mobile Facility

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 Mobile Facilities Pictured here in Gan, the second mobile facility...

  13. An Analysis of Residential PV System Price Differences between the United States and Germany

    Broader source: Energy.gov [DOE]

    Residential photovoltaic (PV) systems were twice as expensive in the United States as in Germany (median of $5.29/W vs. $2.59/W) in 2012. This price discrepancy stems primarily from differences in non-hardware or "soft" costs between the two countries, which can only be explained in part by differences in cumulative market size and associated learning. A survey of German PV installers was deployed to collect rough data on PV soft costs in Germany to compare to results of a similar survey of U.S. PV installers. Non-module hardware costs and all analyzed soft costs are lower in Germany, especially for customer acquisition, installation labor, and profit/overhead costs, but also for expenses related to permitting, interconnection, and inspection procedures. Additional costs occur in the United States due to state and local sales taxes, smaller average system sizes, and longer project development times. To reduce the identified additional costs of residential PV systems, the United States could introduce policies that enable a robust and lasting market while minimizing market fragmentation.

  14. The U.S. Army`s environmental compliance assessment in Germany, a case study

    SciTech Connect (OSTI)

    Schlessman, D.C.

    1995-12-01

    The U.S. Army, Europe (USAREUR) in 1995 is initiating the Army-wide program of assessing environmental compliance at each of its installations. The first assessment was done in Germany in January and is the basis of this study. These assessments are the conerstone of USAREUR`s compliance standards: air emissions, drinking and waste water standards, environmental noise, radon, asbestos, underground storage tanks, hazardous material and petroleum management, and pesticides. Also covered are areas of waste management to include solid, hazardous, and medical wastes and special requirements for handling and disposal of polychlorinated bi- & terphenyls. In addition policy and other science areas are checked. These include environmental program management, environmental effects analysis, endangered species and natural resource protection, and historical and cultural resource preservation. The ECAS`s breadth of medias assessed gives a comprehensive look at the environmental posture of an installation. One of the two manuals used in each assessment is based on the Department of Defense (DOD) environmental final governing standards (FGS). Each overseas country that has a substantial DOD long-term presence has a FGS. The FGS is developed by a DOD appointed executive agent. He compared the DOD baseline of environmental standards (based on U.S. law and DOD policy) and the HN`s environmental standards. From this comparison the standard that is most protective of human health and the environment is selected as the FGS. In Germany, the FGS, and thus the ECAS manual are substantially based on the German standards. This is due tot he well developed environmental standards found in Germany. This study provides the first look at the USAREUR ECAS process and the major changes required in a USAREUR community`s environmental compliance posture to meet the German FGS. The January Anbach ECAS is the first time a community in USAREUR was assessed using the fully operational ECAS.

  15. Research on long term safety of nuclear waste disposal at the research center Karlsruhe, Germany

    SciTech Connect (OSTI)

    Gompper, Klaus; Bosbach, Dirk; Denecke, Melissa A.; Geckeis, Horst; Kienzler, Bernhard; Klenze, Reinhardt

    2007-07-01

    In Germany the safe disposal of radioactive waste is in the responsibility of the federal government. The R and D performed in the Institute for Nuclear Waste Disposal (INE) at the Research Center Karlsruhe contributes to the German provident research in the field of long-term safety for final disposal of high level heat producing nuclear wastes. INE's research is focused on the actinide elements and long lived fission products since these dominate the radiotoxicity over a long time. The research strategy synergistically combines fundamental science of aquatic radionuclide chemistry with applied investigations of real systems (waste form, host rock, aquifer), studied on laboratory scale and in underground laboratories. Because Germany has not yet selected a site for a high-level waste repository, all host rock formations under discussion in the international community (salt, hard rock, clay/tone) are investigated. Emphasis in long-term safety R and D at INE is on the development of actinide speciation methods and techniques in the trace concentration range. (authors)

  16. Brine migration test report: Asse Salt Mine, Federal Republic of Germany: Technical report

    SciTech Connect (OSTI)

    Coyle, A.J.; Eckert, J.; Kalia, H.

    1987-01-01

    This report presents a summary of Brine Migration Tests which were undertaken at the Asse mine of the Federal Republic of Germany (FRG) under a bilateral US/FRG agreement. This experiment simulates a nuclear waste repository at the 800-m (2624-ft) level of the Asse salt mine in the Federal Republic of Germany. This report describes the Asse salt mine, the test equipment, and the pretest properties of the salt in the mine and in the vicinity of the test area. Also included are selected test data (for the first 28 months of operation) on the following: brine migration rates, thermomechaical behavior of the salt (including room closure, stress reading, and thermal profiles), borehole gas pressures, and borehole gas analyses. In addition to field data, laboratory analyses of pretest salt properties are included in this report. The operational phase of these experiments was completed on October 4, 1985, with the commencement of cooldown and the start of posttest activities. 7 refs., 68 figs., 48 tabs.

  17. Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

    SciTech Connect (OSTI)

    Reuters, Benjamin; Finken, M.; Wille, A.; Kalisch, H.; Vescan, A.; Hollaender, B.; Heuken, M.

    2012-11-01

    Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

  18. M1 Energy | Open Energy Information

    Open Energy Info (EERE)

    either solely or in partnership. Their project scope is focused on small to medium-sized oil, gas and electricity projects. Coordinates: 41.88415, -87.632409 Show Map Loading...

  19. Perspectives of Future R and D on HLW Disposal in Germany

    SciTech Connect (OSTI)

    Steininger, W.J. [Forschungszentrum Karlsruhe GmbH, Project Management Agency Forschungszentrum Karlsruhe (PTKA-WTE), Eggenstein-Leopoldshafen (Germany)

    2008-07-01

    The 5. Energy Research Program of the Federal Government 'Innovation and New Technology' is the general framework for R and D activities in radioactive waste disposal. The Ministry of Economics and Technology (BMWi), the Federal Ministry for the Environment, Nature Conservation and Nuclear Safety (BMU) and the Ministry of Education and Research (BMBF) apply the Research Program concerning their respective responsibilities and competences. With regard to the Government's obligation to provide repositories for HLW (spent fuel and vitrified HAW) radioactive waste basic and applied R and D is needed in order to make adequate knowledge available to implementers, decision makers and stakeholders in general. Non-site specific R and D projects are funded by BMWi on the basis of its Research Concept. In the first stage (1998 -2001) most R and D issues were focused on R and D activities related to HLW disposal in rock salt. By that time the R and D program had to be revised and some prioritization was demanded due to changes in politics. In the current version (2001 -2006) emphasize was put on non-saline rocks. The current Research Concept of BMWi is presently subjected to a sort of revision, evaluation, and discussion, inter alia, by experts from several German research institutions. This activity is of special importance against the background of streamlining and focusing the research activities to future demands, priorities and perspectives with regard to the salt concept and the option of disposing of HLW in argillaceous media. Because the status of knowledge on disposal in rock salt is well advanced, it is necessary to take stock of the current state-of-the-art. In this framework some key projects are being currently carried out. The results may contribute to future decisions to be made in Germany with respect to HLW disposal. The first project deals with the development of an advanced safety concept for a HLW waste repository in rock salt. The second project (also carried out in the frame of the 6. Framework Program of the European Commission) aims at completing and optimizing the direct disposal concept for spent fuel by a full-scale demonstration of the technology of emplacement in vertical boreholes. The third project is devoted to the development of a reference concept to dispose of HLW in deep geological repository in clay in Germany. In the following a brief overview is given on the achievements, the projects, and ideas about the consequences for HLW disposal in Germany. (author)

  20. Regulatory Control of Sealed Sources in Germany including Regulations Regarding Spent and Disused Sources - 13176

    SciTech Connect (OSTI)

    Dollan, Ralph; Haeusler, Uwe; Czarwinski, Renate

    2013-07-01

    Effective regulatory control is essential to ensure the safe and secure use of radioactive material and the appropriate management of radioactive waste. To ensure a sustainable control of high radioactive sources, the European Commission published the Council Directive 2003/122/EURATOM on the control of high-activity sealed radioactive sources and orphan sources, which had to be transferred into national legislation by all member states of the European Union. Major requirement of the Directive is a system to ensure traceability of high-activity sealed sources from 'cradle to grave' as well as the provision to take back disused sources by the supplier or manufacturer. With the Act on high-activity sealed radioactive sources Germany implemented the requirements of the Directive 2003/122/EURATOM and established a national registry of high-activity sealed sources in 2006. Currently, about 27.000 high-activity sealed sources are recorded in this national registry. (authors)

  1. Assessing climate impacts of planning policies-An estimation for the urban region of Leipzig (Germany)

    SciTech Connect (OSTI)

    Schwarz, Nina Bauer, Annette Haase, Dagmar

    2011-03-15

    Local climate regulation by urban green areas is an important urban ecosystem service, as it reduces the extent of the urban heat island and therefore enhances quality of life. Local and regional planning policies can control land use changes in an urban region, which in turn alter local climate regulation. Thus, this paper describes a method for estimating the impacts of current land uses as well as local and regional planning policies on local climate regulation, using evapotranspiration and land surface emissivity as indicators. This method can be used by practitioners to evaluate their policies. An application of this method is demonstrated for the case study Leipzig (Germany). Results for six selected planning policies in Leipzig indicate their distinct impacts on climate regulation and especially the role of their spatial extent. The proposed method was found to easily produce a qualitative assessment of impacts of planning policies on climate regulation.

  2. Disposing of High-Level Radioactive Waste in Germany - A Note from the Licensing Authority - 12530

    SciTech Connect (OSTI)

    Pick, Thomas Stefan; Bluth, Joachim; Lauenstein, Christof; Markhoefer, Joerg

    2012-07-01

    Following the national German consensus on the termination of utilisation of nuclear energy in the summer of 2011, the Federal and Laender Governments have declared their intention to work together on a national consensus on the disposal of radioactive waste as well. Projected in the early 1970's the Federal Government had started exploring the possibility to establish a repository for HLW at the Gorleben site in 1977. However, there is still no repository available in Germany today. The delay results mainly from the national conflict over the suitability of the designated Gorleben site, considerably disrupting German society along the crevice that runs between supporters and opponents of nuclear energy. The Gorleben salt dome is situated in Lower Saxony, the German state that also hosts the infamous Asse mine repository for LLW and ILW and the Konrad repository project designated to receive LLW and ILW as well. With the fourth German project, the Morsleben L/ILW repository only 20 km away across the state border, the state of Lower Saxony carries the main load for the disposal of radioactive waste in Germany. After more than 25 years of exploration and a 10 year moratorium the Gorleben project has now reached a cross-road. Current plans for setting up a new site selection procedure in Germany call for the selection and exploration of up to four alternative sites, depending only on suitable geology. In the meantime the discussion is still open on whether the Gorleben project should be terminated in order to pacify the societal conflict or being kept in the selection process on account of its promising geology. The Lower Saxony Ministry for Environment and Climate Protection proposes to follow a twelve-step-program for finding the appropriate site, including the Gorleben site in the process. With its long history of exploration the site is the benchmark that alternative sites will have to compare with. Following the national consensus of 2011 on the termination of nuclear energy utilisation, it is now the time to reach a national consensus on the disposal of radioactive waste as well. This is a task that the country and society, federal and state governments, political parties and the citizens will have to jointly master within the current generation and within German territory. The basis for the consensus will be a reset to the beginning of this process. It has to start with a new site selection procedure that will take into account and compare up to four alternative sites. This procedure will have to follow the principle of highest possible security. It should be based on a stepwise approach, strictly following scientific criteria. Public confidence in the process and trust can only be achieved by a transparent procedure allowing for the participation of the public and the stakeholders. It is therefore mandatory to consult, both on a national and regional level, all involved parties (public authority, scientist and citizen). The national consensus must also include a decision on the future of the Gorleben exploratory site. The site selection procedure must therefore take this site into account as well. Furthermore, the final decision on safe disposal of German radioactive wastes must be made by sovereign rule by Federal Parliament and Federal Council. (authors)

  3. Multi-criteria assessment of socio-environmental aspects in shrinking cities. Experiences from eastern Germany

    SciTech Connect (OSTI)

    Schetke, Sophie Haase, Dagmar

    2008-10-15

    Demographic change and economic decline produce modified urban land use pattern and densities. Compared to the beginning of the 90s after the German reunification, nowadays massive housing and commercial vacancies followed by demolition and perforation come to pass in many cities of the former GDR. In consequence, a considerable surplus of urban brownfields has been created. Furthermore, the decline in the urban fabric affects social infrastructure and urban greenery of local neighbourhoods. Here, urban planning enters into 'uncharted territory' since it needs to assess the socio-environmental impact of shrinkage. In order to carry out such an evaluation quantitatively, a multi-criteria assessment scheme (MCA) was developed and applied. Firstly, we identified infrastructure and land use changes related to vacancy and demolition. Secondly, demolition scenarios for the coming 20 years were applied in order to give an idea for a long-term monitoring approach at the local district level. A multi-criteria indicator matrix quantifies the socio-environmental impact on both urban greenery and residents. Using it, we set demolition scenarios against urban 'quality of life' targets. Empirical evidence comes from Leipzig, in eastern Germany, a representative case study for urban shrinkage processes. The results show that shrinkage implies socio-environmental changes of residential livelihoods, however, does not simply increase or decrease the overall urban quality of life. The integrated assessment of all indicators identifies environmental and social opportunities, as well as the challenges a shrinking city is faced with.

  4. The evolution of the break preclusion concept for nuclear power plants in Germany

    SciTech Connect (OSTI)

    Schulz, H.

    1997-04-01

    In the updating of the Guidelines for PWR`s of the {open_quotes}Reaktor-Sicherheitskommission{close_quotes} (RSK) in 1981 the requirements on the design have been changed with respect to the postulated leaks and breaks in the primary pressure boundary. The major change was a revision in the requirements for pipe whip protection. As a logical consequence of the {open_quotes}concept of basic safety{close_quotes} a guillotine type break or any other break type resulting in a large opening is not postulated any longer for the calculation of reaction and jet forces. As an upper limit for a leak an area of 0, 1 A (A = open cross section of the pipe) is postulated. This decision was based on a general assessment of the present PWR system design in Germany. Since then a number of piping systems have been requalified in the older nuclear power plants to comply with the break preclusion concept. Also a number of extensions of the concept have been developed to cover also leak-assumptions for branch pipes. Furthermore due considerations have been given to other aspects which could contribute to a leak development in the primary circuit, like vessel penetrations, manhole covers, flanges, etc. Now the break preclusion concept originally applied to the main piping has been developed into an integrated concept for the whole pressure boundary within the containment and will be applied also in the periodic safety review of present nuclear power plants.

  5. Relation between facies, diagenesis, and reservoir quality of Rotliegende reservoirs in north Germany

    SciTech Connect (OSTI)

    David, F.; Gast, R.; Kraft, T. (BEB Erdgas Erdol GmbH, Hannover (Germany))

    1993-09-01

    In north Germany, the majority of Rotliegende gas fields is confined to an approximately 50 km-wide east-west-orientated belt, which is situated on the gently north-dipping flank of the southern Permian basin. Approximately 400 billion m[sup 3] of natural gas has been found in Rotliegende reservoir sandstones with average porosities of depths ranging from 3500 to 5000 m. Rotliegende deposition was controlled by the Autunian paleo-relief, and arid climate and cyclic transgressions of the desert lake. In general, wadis and large dunefields occur in the hinterland, sebkhas with small isolate dunes and shorelines define the coastal area, and a desert lake occurs to the north. The sandstones deposited in large dunefields contain only minor amounts of illite, anhydrite, and calcite and form good reservoirs. In contrast, the small dunes formed in the sebkha areas were affected by fluctuations of the desert lake groundwaters, causing the infiltration of detrital clay and precipitation of gypsum and calcite. These cements were transformed to illite, anhydrite, and calcite-II during later diagenesis, leading to a significant reduction of the reservoir quality. The best reservoirs occur in the shoreline sandstones because porosity and permeability were preserved by early magnesium-chlorite diagenesis. Since facies controls diagenesis and consequently reservoir quality, mapping of facies also indicates the distribution of reservoir and nonreservoir rocks. This information is used to identify play area and to interpret and calibrate three-dimensional seismic data.

  6. Wind Technology, Cost, and Performance Trends in Denmark, Germany, Ireland, Norway, the European Union, and the United States: 2007 - 2012; NREL (National Renewable Energy Laboratory)

    SciTech Connect (OSTI)

    Hand, Maureen

    2015-06-15

    This presentation provides a summary of IEA Wind Task 26 report on Wind Technology, Cost, and Performance Trends in Denmark, Germany, Ireland, Norway, the European Union, and the United States: 2007-2012

  7. Heavy-metal contamination on training ranges at the Grafenwoehr Training Area, Germany

    SciTech Connect (OSTI)

    Zellmer, S.D.; Schneider, J.F.

    1993-05-01

    Large quantities of lead and other heavy metals are deposited in the environment of weapons ranges during training exercises. This study was conducted to determine the type, degree, and extent of heavy-metal contamination on selected handgun, rifle, and hand-grenade ranges at Grafenwoehr Training Area, Germany. Soil, vegetation, and surface-water samples were collected and analyzed using the inductively-coupled plasma atomic-emission spectroscopy (ICP-AES) method and the toxic characterization leaching procedure (TCLP). The ICP-AES results show that above-normal levels of lead and copper are in the surface soil at the handgun range, high concentrations of lead and copper are in the berm and soil surface at the rifle range, and elevated levels of cadmium and above-normal concentrations of arsenic, copper, and zinc are present in the surface soil at the hand-grenade range. The TCLP results show that surface soils can be considered hazardous waste because of lead content at the rifle range and because of cadmium concentration at the hand-grenade range. Vegetation at the handgun and rifle ranges has above-normal concentrations of lead. At the hand-grenade range, both vegetation and surface water have high levels of cadmium. A hand-held X-ray fluorescence (XRF) spectrum analyzer was used to measure lead concentrations in soils in a field test of the method. Comparison of XRF readings with ICP-AES results for lead indicate that the accuracy and precision of the hand-held XRF unit must improve before the unit can be used as more than a screening tool. Results of this study show that heavy-metal contamination at all three ranges is limited to the surface soil; heavy metals are not being leached into the soil profile or transported into adjacent areas.

  8. Disposal of LLW and ILW in Germany - Characterisation and Documentation of Waste Packages with Respect to the Change of Requirements

    SciTech Connect (OSTI)

    Bandt, G.; Spicher, G.; Steyer, St.; Brennecke, P.

    2008-07-01

    Since the 1998 termination of LLW and ILW emplacement in the Morsleben repository (ERAM), Germany, the treatment, conditioning and documentation of radioactive waste products and packages have been continued on the basis of the waste acceptance requirements as of 1995, prepared for the Konrad repository near Salzgitter in Lower Saxony, Germany. The resulting waste products and packages are stored in interim storage facilities. Due to the Konrad license issued in 2002 the waste acceptance requirements have to be completed by additional requirements imposed by the licensing authority, e. g. for the declaration of chemical waste package constituents. Therefore, documentation of waste products and packages which are checked by independent experts and are in parts approved by the responsible authority (Office for Radiation Protection, BfS) up to now will have to be checked again for fulfilling the final waste acceptance requirements prior to disposal. In order to simplify these additional checks, databases are used to ensure an easy access to all known facts about the waste packages. A short balance of the existing waste products and packages which are already checked and partly approved by BfS as well as an overview on the established databases ensuring a fast access to the known facts about the conditioning processes is presented. (authors)

  9. HLW Return from France to Germany - 15 Years of Experience in Public Acceptance and Technical Aspects - 12149

    SciTech Connect (OSTI)

    Graf, Wilhelm

    2012-07-01

    Since in 1984 the national reprocessing concept was abandoned the reprocessing abroad was the only existing disposal route until 1994. With the amendment of the Atomic Energy Act in 2001 spent fuel management changed completely since from 1 June 2005 any delivery of spent fuel to reprocessing plants was prohibited and the direct disposal of spent fuel became mandatory. Until 2005 the total amount of spent fuel to be reprocessed abroad added up to 6080 t HM, 5309 t HM thereof in France. The waste generated from reprocessing - alternatively an equivalent amount of radioactive material - has to be returned to the country of origin according to the commercial contracts signed between the German utilities and COGEMA, now AREVA NC, in France and BNFL, now INS in UK. In addition the German and the French government exchanged notes with the obligation of both sides to enable and support the return of reprocessing residues or equivalents to Germany. The return of high active vitrified waste from La Hague to the interim storage facility at Gorleben was demanding from the technical view i. e. the cask design and the transport. Unfortunately the Gorleben area served as a target for nuclear opponents from the first transport in 1996 to the latest one in 2011. The protection against sabotage of the railway lines and mass protests needed highly improved security measures. In France and Germany special working forces and projects have been set up to cope with this extraordinary situation. A complex transport organization was established to involve all parties in line with the German and French requirements during transport. The last transport of vitrified residues from France has been completed successfully so far thus confirming the efficiency of the applied measures. Over 15 years there was and still is worldwide no comparable situation it is still unique. Summing up, the exceptional project handling challenge that resulted from the continuous anti-nuclear civil disobedience in Germany over the whole 15-year long project running time could be faced efficiently. It has to be concluded that despite of all problems the anti-nuclear activities have caused so far, all transports of vitrified HLW have always been completed successfully by adapting the commonly established safety, security and public acceptance measures to the special conditions and needs in Germany and coordinating the activities of all parties involved but at the expense of high costs for industry and government and a challenging operational complexity. Apart from an anticipatory project planning a good communication between all involved industrial parties and the French and the German government was the key to the effective management of such shipments and to minimize the radiological, economic, environmental, public and political impact. The future will show how efficiently the gained experience can be used for further return projects which are to be realized since no reprocessed waste has yet been returned from UK and neither the medium-level nor the low-level radioactive waste has been transferred from France to Germany. (author)

  10. Feasibility/treatability studies for removal of heavy metals from training range soils at the Grafenwoehr Training Area, Germany

    SciTech Connect (OSTI)

    Peters, R.W.

    1995-05-01

    A feasibility/treatability study was performed to investigate the leaching potential of heavy metals (particularly lead) from soils at the Grafenw6hr Training Area (GTA) in Germany. The study included an evaluation of the effectiveness of chelant extraction to remediate the heavy-metal-contarninated soils. Batch shaker tests indicated that ethylenediaminetetraacetic acid (EDTA) (0.01M) was more effective than citric acid (0.01M) at removing cadmium, copper, lead, and zinc. EDTA and citric acid were equally effective in mobilizing chromium and barium from the soil. The batch shaker technique with chelant extraction offers promise as a remediation technique for heavy-metal-contaninated soil at the GTA. Columnar flooding tests conducted as part of the study revealed that deionized water was the least effective leaching solution for mobilization of the heavy metals; the maximum solubilization obtained was 3.72% for cadmium. EDTA (0.05M) achieved the greatest removal of lead (average removal of 17.6%). The difficulty of extraction using deionized water indicates that all of the heavy metals are very tightly bound to the soil; therefore, they are very stable in the GTA soils and do not pose a serious threat to the groundwater system. Columnar flooding probably does not represent a viable remediation technique for in-situ cleanup of heavy-metal-contaminated soils at the GTA.

  11. Atmospheric Radiation Measurement (ARM) Data from Black Forest Germany for the Convective and Orographically Induced Precipitation Study (COPS)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    The primary goal of the ARM Program is to improve the treatment of cloud and radiation physics in global climate models in order to improve the climate simulation capabilities of these models. ARM maintains four major, permanent sites for data collection and deploys the ARM Mobile Facility (AMF) to other sites as determined. In 2007 the AMF operated in the Black Forest region of Germany as part of the Convective and Orographically Induced Precipitation Study (COPS). Scientists studied rainfall resulting from atmospheric uplift (convection) in mountainous terrain, otherwise known as orographic precipitation. This was part of a six -year duration of the German Quantitative Precipitation Forecasting (QPF) Program. COPS was endorsed as a Research and Development Project by the World Weather Research Program. This program was established by the World Meteorological Organization to develop improved and cost-effective forecasting techniques, with an emphasis on high-impact weather. A large collection of data plots based on data streams from specific instruments used at Black Forest are available via a link from ARM's Black Forest site information page. Users will be requested to create a password, but the plots and the data files in the ARM Archive are free for viewing and downloading.

  12. EA-1977: Acceptance and Disposition of Used Nuclear Fuel Containing U.S.-Origin Highly Enriched Uranium from the Federal Republic of Germany

    Broader source: Energy.gov [DOE]

    This environmental assessment (EA) will evaluate the potential environmental impacts of a DOE proposal to accept used nuclear fuel from the Federal Republic of Germany at DOEs Savannah River Site (SRS) for processing and disposition. This used nuclear fuel is composed of kernels containing thorium and U.S.-origin highly enriched uranium (HEU) embedded in small graphite spheres that were irradiated in nuclear reactors used for research and development purposes.

  13. Made in Germany

    SciTech Connect (OSTI)

    2005-09-01

    This supplement was prepared in collaboration with the Association of German Mining Machine Manufacturers within VDMA to give an overview of German manufacturers' contribution to the coal industry. It has 18 short papers and a VDMA vendor matrix and directory. Papers include details of MAN Takraf's surface mining equipment, hydraulic shovels and excavators from Komatsu, Liebherr and Terex O & K, Siemens motors and electric control technology in trucks, shovels etc., new technology from DBT, IBS and Wirth, and low emission engines and drives from Deutz and DaimlerCrysler. 2 figs.

  14. Best of Germany 2007

    SciTech Connect (OSTI)

    2007-08-15

    This supplement, sponsored by the German Engineering Federation, VDMA, includes a seven page article on the German mining industry, a two-page article on occupational health and safety; a three-page article on collaboration, consulting and finance in the German mining industry; and a 27 page article on German mining technology and its mining. A buyers guide gives details of German companies selling equipment for the mining industry.

  15. Best of Germany 2008

    SciTech Connect (OSTI)

    Casteel, K.

    2008-07-01

    This supplement discusses German mining equipment and technology under the following sections: mining experience and machinery export; underground mining technology; surface mining technology; materials handling technology; coal and minerals processing technology; power technology; and automation, specialized components and materials. Manufacturers of the different equipment and their contact details are given. 4 figs.

  16. IEA Wind Task 26. Wind Technology, Cost, and Performance Trends in Denmark, Germany, Ireland, Norway, the European Union, and the United States: 2007–2012

    SciTech Connect (OSTI)

    Vitina, Aisma; Lüers, Silke; Wallasch, Anna-Kathrin; Berkhout, Volker; Duffy, Aidan; Cleary, Brendan; Husabø, Lief I.; Weir, David E.; Lacal-Arántegui, Roberto; Hand, Maureen; Lantz, Eric; Belyeu, Kathy; Wiser, Ryan H; Bolinger, Mark; Hoen, Ben

    2015-06-01

    The International Energy Agency Implementing Agreement for cooperation in Research, Development, and Deployment of Wind Energy Systems (IEA Wind) Task 26—The Cost of Wind Energy represents an international collaboration dedicated to exploring past, present and future cost of wind energy. This report provides an overview of recent trends in wind plant technology, cost, and performance in those countries that are currently represented by participating organizations in IEA Wind Task 26: Denmark, Germany, Ireland, Norway, and the United States as well as the European Union.

  17. ARM - PI Product - Combined Retrieval, Microphysical Retrievals...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    surfaceTOA fluxes, etc.: gan2combret7fenghr1M1 4) 1-hourly averaged radiative heating rate files on constant pressure grid for entire AMIE period, containing all relevant...

  18. IEA Wind Task 26. Wind Technology, Cost and Performance Trends in Denmark, Germany, Ireland, Norway, the European Union, and the United States. 2007 - 2012

    SciTech Connect (OSTI)

    Vitina, Aisma; Luers, Silke; Wallasch, Anna-Kathrin; Berkhout, Volker; Duffy, Aidan; Cleary, Brendan; Husabo, Leif I.; Weir, David E.; Lacal-Arantegui, Roberto; Hand, M. Maureen; Lantz, Eric; Belyeu, Kathy; Wiser, Ryan; Bolinger, Mark; Hoen, Ben

    2015-06-12

    This report builds from a similar previous analysis (Schwabe et al., 2011) exploring the differences in cost of wind energy in 2008 among countries participating in IEA Wind Task 26 at that time. The levelized cost of energy (LCOE) is a widely recognized metric for understanding how technology, capital investment, operations, and financing impact the life-cycle cost of building and operating a wind plant. Schwabe et al. (2011) apply a spreadsheet-based cash flow model developed by the Energy Research Centre of the Netherlands (ECN) to estimate LCOE. This model is a detailed, discounted cash flow model used to represent the various cost structures in each of the participating countries from the perspective of a financial investor in a domestic wind energy project. This model is used for the present analysis as well, and comparisons are made for those countries who contributed to both reports, Denmark, Germany, and the United States.

  19. CLIMATE CHANGE FUEL CELL PROGRAM 200 kW - PC25C FUEL CELL POWER PLANT FOR THE ST.-AGNES-HOSPITAL, BOCHOLT, GERMANY

    SciTech Connect (OSTI)

    Dipl.-Ing. Knut Stahl

    2002-01-31

    Since the beginning of the Year 2001, the Saint-Agnes-Hospital in Bocholt, Germany, operates a phosphoric acid fuel cell (PAFC) to provide the base load of electrical power as well as heat in Winter and air conditioning in Summer. The project was made possible by federal funding from the U.S. Department of Energy as well as by a strategic alliance with the local utility company, the Bocholter Energie- und Wasserversorgung GmbH (BEW), and with the gas supplier of BEW, the Thyssengas GmbH. The fuel cell power plant is combined with an absorption chiller. It is highly efficient and has an excellent power to heat ratio. The operation during the first Year went smoothly and nearly free of trouble.

  20. CHS M | Open Energy Information

    Open Energy Info (EERE)

    CHS M Jump to: navigation, search Name: CHS & M Place: Germany Product: A local investment cooperative in Bosseborn, Germany. References: CHS & M1 This article is a stub. You can...

  1. ARM - Datastreams - twrcam3m

    Office of Scientific and Technical Information (OSTI)

    Atqasuk AK retired ARM Mobile Facility FKB M1 Browse Data Browse Plots Black Forest, Germany retired GRW M1 Browse Data Browse Plots Graciosa Island, Azores, Portugal retired NIM...

  2. Energy conservation and electricity sector liberalization: Case-studies on the development of cogeneration, wind energy and demand-side management in the Netherlands, Denmark, Germany and the United Kingdom

    SciTech Connect (OSTI)

    Slingerland, S.

    1998-07-01

    In this paper, the development of cogeneration, wind energy and demand-side management in the Netherlands, Denmark, Germany and the United Kingdom are compared. It is discussed to what extent these developments are determined by the liberalization process. Three key liberalization variables are identified: unbundling, privatization and introduction of competition. The analysis suggests that unbundling prior to introduction of full competition in generation is particularly successful in stimulating industrial cogeneration; simultaneous introduction of competition and unbundling mainly stimulates non-cogeneration gas-based capacity; and introduction of competition in itself is likely to impede the development of district-heating cogeneration. Furthermore, it is argued that development of wind energy and demand-side management are primarily dependent on the kind of support system set up by policy makers rather than on the liberalization process. Negative impacts of introduction of competition on integrated resource planning and commercial energy services could nevertheless be expected.

  3. C:\\MYDOCS\\FBSS-M~1\\HATTIE\\LAYOUT94.TXT

    U.S. Energy Information Administration (EIA) Indexed Site

    3. B4G Percent public order and safety PORDP5 52- 54 MISS3CH. 3. B4H Percent out-patient health care HCOUTP5 56- 58 MISS3CH. 3. B4I Percent industrial INDUSP5 60- 62 MISS3CH....

  4. Microsoft Word - Sandia-VT M-1 Summary Report_FINAL.docx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A Model for the Nation: Promoting Education and Innovation in Vermont's Electricity Sector Summary of Activities Completed Through the Department of Energy Power Systems Fellowship Program Under Inter-Entity Work Order Number M610000767 Laurie Burnham, Robert Q. Hwang and Juan J. Torres Prepared by Sandia National Laboratories A Model for the Nation: Promoting Education and Innovation in Vermont's Electricity Sector 2 A Model for the Nation: Promoting Education and Innovation in Vermont's

  5. Crystal structures of the M1 and M4 muscarinic acetylcholine...

    Office of Scientific and Technical Information (OSTI)

    Authors: Thal, David M. ; Sun, Bingfa ; Feng, Dan ; Nawaratne, Vindhya ; Leach, Katie ; Felder, Christian C. ; Bures, Mark G. ; Evans, David A. ; Weis, William I. ; Bachhawat, ...

  6. AMIE Gan Island Ancillary Disdrometer Field Campaign Report ...

    Office of Scientific and Technical Information (OSTI)

    In order to measure raindrop size distributions, a disdrometer of Nagoya University, Japan, was set up close to the ARM Two-Dimensional (2D) Video Disdrometer (2DVD). The SMART-R ...

  7. Lu Gan | Center for Bio-Inspired Solar Fuel Production

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Principal Investigators Postdoctoral Fellows Center researchers Graduate Students Undergraduate Students All Bisfuel Center Personnel Barun Das Bhupesh Goyal Jackson Megiatto Lu...

  8. ARM - Field Campaign - ARM MJO Investigation Experiment on Gan...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    was designed to test several current hypotheses regarding the mechanisms responsible for MJO (Madden-Julian Oscillation) initiation and propagation in the Indian Ocean area. ...

  9. Visit of the Federal President of Germany

    ScienceCinema (OSTI)

    None

    2011-04-25

    Le D.G. H.Schopper a le plaisir de souhaiter la bienvenue au président de la République fédérale allemande, Richard von Weizsäcker (président féderale de 1984-1994). C'est la première visite d'un président allemand dans l'histoire du Cern.

  10. MOU_DOE_US_Germany.pdf

    Office of Environmental Management (EM)

    MOJAVE MOJAVE PDF icon DOE-LPO_Project-Posters_CSP_Mojave.pdf More Documents & Publications SOLANA GENESIS CRESCENT DUNES

    MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE MOJAVE PROJECT SUMMARY In September 2011, the Department of Energy issued a $1.2 billion loan guarantee to finance Mojave, a 250-MW parabolic trough concentrating solar power (CSP) plant on previously disturbed agricultural land near Barstow, California. It started

  11. Search for 14.4 keV solar axions from M1 transition of Fe-57...

    Office of Scientific and Technical Information (OSTI)

    K. M. ; Huang, H. Z. ; Kadel, R. ; Kazkaz, K. ; Keppel, G. ; Kogler, L. ; Kolomensky, Yu. G. ; Lenz, D. ; Li, Y. L. ; Ligi, C. ; Liu, X. ; Ma, Y. G. ; Maiano, C. ; Maino, M. ;...

  12. Functional MnMg{sub k} cation complexes in GaN featured by Raman spectroscopy

    SciTech Connect (OSTI)

    Devillers, T. Bonanni, A.; Leite, D. M. G.; Department of Physics, So Paulo State University, BauruSP ; Dias da Silva, J. H.

    2013-11-18

    The evolution of the optical branch in the Raman spectra of (Ga,Mn)N:Mg epitaxial layers as a function of the Mn and Mg concentrations, reveals the interplay between the two dopants. We demonstrate that the various Mn-Mg-induced vibrational modes can be understood in the picture of functional MnMg{sub k} complexes formed when substitutional Mn cations are bound to k substitutional Mg through nitrogen atoms, the number of ligands k being driven by the ratio between the Mg and the Mn concentrations.

  13. Negative differential resistance in GaN tunneling hot electron transistors

    SciTech Connect (OSTI)

    Yang, Zhichao; Nath, Digbijoy; Rajan, Siddharth

    2014-11-17

    Room temperature negative differential resistance is demonstrated in a unipolar GaN-based tunneling hot electron transistor. Such a device employs tunnel-injected electrons to vary the electron energy and change the fraction of reflected electrons, and shows repeatable negative differential resistance with a peak to valley current ratio of 7.2. The device was stable when biased in the negative resistance regime and tunable by changing collector bias. Good repeatability and double-sweep characteristics at room temperature show the potential of such device for high frequency oscillators based on quasi-ballistic transport.

  14. Hydride vapor phase GaN films with reduced density of residual electrons and deep traps

    SciTech Connect (OSTI)

    Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Yugova, T. G.; Cox, H.; Helava, H.; Makarov, Yu.; Usikov, A. S.

    2014-05-14

    Electrical properties and deep electron and hole traps spectra are compared for undoped n-GaN films grown by hydride vapor phase epitaxy (HVPE) in the regular process (standard HVPE samples) and in HVPE process optimized for decreasing the concentration of residual donor impurities (improved HVPE samples). It is shown that the residual donor density can be reduced by optimization from ?10{sup 17}?cm{sup ?3} to (25)??10{sup 14}?cm{sup ?3}. The density of deep hole traps and deep electron traps decreases with decreased donor density, so that the concentration of deep hole traps in the improved samples is reduced to ?5??10{sup 13}?cm{sup ?3} versus 2.9??10{sup 16}?cm{sup ?3} in the standard samples, with a similar decrease in the electron traps concentration.

  15. Ultra-short channel GaN high electron mobility transistor-like...

    Office of Scientific and Technical Information (OSTI)

    based on the velocity-field dependence of two-dimensional electron gas (2-DEG) channel accounting for the ballistic electron acceleration and the inter-valley transfer. In...

  16. Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Jacobs, Benjamin W.; Ayres, Virginia M.; Petkov, Mihail P.; Halpern, Joshua B.; He, Maoqi; Baczewski, Andrew D.; McElroy, Kaylee; Crimp, Martin A.; Zhang, Jiaming; Shaw, Harry C.

    2016-02-01

    Here, we report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High-resolution transmission electron microscopy was used to identify distinct wurtzite and zinc-blende crystalline phases within single nanowires through the use of selected area electron diffraction, electron dispersive spectroscopy, electron energy loss spectroscopy, and fast Fourier transform techniques. A mechanism for growth is identified.

  17. LEDs on Semipolar Bulk GaN Substrate with IQE > 80% at 150 A...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Communications: Results from this program have been presented in the following workshops: * DOE Solid State Lighting R&D Workshop, Jan 29 - 31, 2013, Long Beach, CA (both Oral and ...

  18. Space-and-Time Resolved Spectroscopy of Single GaN Nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Upadhya, Prashanth C.; Indian Space Research Organization, Bangalor; Martinez, Julio A.; New Mexico State Univ., Las Cruces, NM; Li, Qiming; Wang, George T.; Swartzentruber, Brian S.; Taylor, Antoinette J.; Prasankumar, Rohit P.

    2015-07-01

    Gallium nitridenanowires have garnered much attention in recent years due to their attractive optical and electrical properties. An understanding of carrier transport, relaxation, and recombination in these quasi-one-dimensional nanosystems is therefore important in optimizing them for various applications. We present ultrafast optical microscopic measurements on single GaNnanowires. Furthermore, our experiments, performed while varying the light polarization,excitation fluence, and position, give insight into the mechanisms governing carrier dynamics in these nanosystems.

  19. Highly aligned vertical GaN nanowires using submonolayer metal catalysts

    DOE Patents [OSTI]

    Wang, George T.; Li, Qiming; Creighton, J. Randall

    2010-06-29

    A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires.

  20. DECOMMISSIONING OF NUCLEAR FACILITIES IN GERMANY - STATUS AT BMBF SITES

    SciTech Connect (OSTI)

    Papp, R.; Komorowski, K.

    2002-02-25

    In a period of approximately 40 years prior to 1994, the German Federal Government had spent about {approx} 15 billion to promote nuclear technology. These funds were earmarked for R&D projects as well as demonstration facilities which took up operation between 1960 and 1980. These BMBF (Federal Ministry for Research) facilities were mainly located at the sites of the federal research centers at Juelich and Karlsruhe (the research reactors AVR, FR2, FRJ-1, KNK, and MZFR, the pilot reprocessing plant WAK) but included also the pilot plants SNR-300 and THTR-300 for fast breeder and high-temperature gas-cooled reactor development, respectively, and finally the salt mine Asse which had been used for waste emplacement prior to conversion into an underground research laboratory. In the meantime, almost all of these facilities were shut down and are now in a state of decommissioning and dismantling. This is mainly due to the facts that R&D needs are satisfied or do not exist any more and that, secondly, the lack of political consensus led to the cancellation of advanced nuclear technology.

  1. EUDEEP (Smart Grid Project) (Germany) | Open Energy Information

    Open Energy Info (EERE)

    technical and nontechnical barriers that prevent a massive deployment of distributed energy resources (DER) in Europe. In partnership with manufacturers, research organizations,...

  2. Investigation of LaxSr1-xCoyM1-yO3-d (M = Mn Fe) perovskite materials as thermochemical energy storage media.

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Babiniec, Sean Michael; Ambrosini, Andrea; Coker, Eric Nicholas; Miller, James E.

    2015-06-23

    Materials in the LaxSr1–xCoyMn1–yO3–δ (LSCM) and LaxSr1–xCoyFe1–yO3–δ (LSCF) families are candidates for high-temperature thermochemical energy storage due to their facility for cyclic endothermic reduction and exothermic oxidation. A set of 16 LSCM and 21 LSCF compositions were synthesized by a modified Pechini method and characterized by powder X-ray diffraction and thermogravimetric analysis. All materials were found to be various symmetries of the perovskite phase. LSCM was indexed as tetragonal, cubic, rhombohedral, or orthorhombic as a function of increased lanthanum content. For LSCF, compositions containing low lanthanum content were indexed as cubic while materials with high lanthanum content were indexed asmore » rhombohedral. An initial screening of redox activity was completed by thermogravimetric analysis for each composition. The top three compositions with the greatest recoverable redox capacity for each family were further characterized in equilibrium thermogravimetric experiments over a range of temperatures and oxygen partial pressures. As a result, these equilibrium experiments allowed the extraction of thermodynamic parameters for LSCM and LSCF compositions operated in thermochemical energy storage conditions.« less

  3. Decontamination of hot cells K-1, K-3, M-1, M-3, and A-1, M-Wing, Building 200: Project final report Argonne National Laboratory-East

    SciTech Connect (OSTI)

    Cheever, C.L.; Rose, R.W.

    1996-09-01

    The purpose of this project was to remove radioactively contaminated materials and equipment from the hot cells, to decontaminate the hot cells, and to dispose of the radioactive waste. The goal was to reduce stack releases of Rn-220 and to place the hot cells in an emptied, decontaminated condition with less than 10 {micro}Sv/h (1 mrem/h) general radiation background. The following actions were needed: organize and mobilize a decontamination team; prepare decontamination plans and procedures; perform safety analyses to ensure protection of the workers, public, and environment; remotely size-reduce, package, and remove radioactive materials and equipment for waste disposal; remotely decontaminate surfaces to reduce hot cell radiation background levels to allow personnel entries using supplied air and full protective suits; disassemble and package the remaining radioactive materials and equipment using hands-on techniques; decontaminate hot cell surfaces to remove loose radioactive contaminants and to attain a less than 10 {micro}Sv/h (1 mrem/h) general background level; document and dispose of the radioactive and mixed waste; and conduct a final radiological survey.

  4. The effect of cigarette smoke and arsenic exposure on urothelial carcinoma risk is modified by glutathione S-transferase M1 gene null genotype

    SciTech Connect (OSTI)

    Chung, Chi-Jung [Department of Health Risk Management, College of Public Health, China Medical University, Taichung, Taiwan (China) [Department of Health Risk Management, College of Public Health, China Medical University, Taichung, Taiwan (China); Department of Medical Research, China Medical University Hospital, Taichung, Taiwan (China); Huang, Chao-Yuan; Pu, Yeong-Shiau [Department of Urology, National Taiwan University Hospital, Taipei, Taiwan (China)] [Department of Urology, National Taiwan University Hospital, Taipei, Taiwan (China); Shiue, Horng-Sheng [Department of Chinese Medicine, Chang Gung Memorial Hospital, Taipei, Taiwan (China)] [Department of Chinese Medicine, Chang Gung Memorial Hospital, Taipei, Taiwan (China); Su, Chien-Tien [Department of Family Medicine, Taipei Medical University Hospital, Taipei, Taiwan (China)] [Department of Family Medicine, Taipei Medical University Hospital, Taipei, Taiwan (China); Hsueh, Yu-Mei, E-mail: ymhsueh@tmu.edu.tw [Department of Public Health, School of Medicine, College of Medicine, Taipei Medical University, Taipei, Taiwan (China) [Department of Public Health, School of Medicine, College of Medicine, Taipei Medical University, Taipei, Taiwan (China); School of Public Health, College of Public Health and Nutrition, Taipei Medical University, Taipei, Taiwan (China)

    2013-01-15

    Inter-individual variation in the metabolism of xenobiotics, caused by factors such as cigarette smoking or inorganic arsenic exposure, is hypothesized to be a susceptibility factor for urothelial carcinoma (UC). Therefore, our study aimed to evaluate the role of geneenvironment interaction in the carcinogenesis of UC. A hospital-based casecontrol study was conducted. Urinary arsenic profiles were measured using high-performance liquid chromatographyhydride generator-atomic absorption spectrometry. Genotyping was performed using a polymerase chain reaction-restriction fragment length polymorphism technique. Information about cigarette smoking exposure was acquired from a lifestyle questionnaire. Multivariate logistic regression was applied to estimate the UC risk associated with certain risk factors. We found that UC patients had higher urinary levels of total arsenic, higher percentages of inorganic arsenic (InAs%) and monomethylarsonic acid (MMA%) and lower percentages of dimethylarsinic acid (DMA%) compared to controls. Subjects carrying the GSTM1 null genotype had significantly increased UC risk. However, no association was observed between gene polymorphisms of CYP1A1, EPHX1, SULT1A1 and GSTT1 and UC risk after adjustment for age and sex. Significant geneenvironment interactions among urinary arsenic profile, cigarette smoking, and GSTM1 wild/null polymorphism and UC risk were observed after adjustment for potential risk factors. Overall, geneenvironment interactions simultaneously played an important role in UC carcinogenesis. In the future, large-scale studies should be conducted using tag-SNPs of xenobiotic-metabolism-related enzymes for gene determination. -- Highlights: ? Subjects with GSTM1 null genotype had significantly increased UC risk. ? UC patients had poor arsenic metabolic ability compared to controls. ? GSTM1 null genotype may modify arsenic related UC risk.

  5. Direct transparent electrode patterning on layered GaN substrate by screen printing of indium tin oxide nanoparticle ink for Eu-doped GaN red light-emitting diode

    SciTech Connect (OSTI)

    Kashiwagi, Y. Yamamoto, M.; Saitoh, M.; Takahashi, M.; Ohno, T.; Nakamoto, M.; Koizumi, A.; Fujiwara, Y.; Takemura, Y.; Murahashi, K.; Ohtsuka, K.; Furuta, S.

    2014-12-01

    Transparent electrodes were formed on Eu-doped GaN-based red-light-emitting diode (GaN:Eu LED) substrates by the screen printing of indium tin oxide nanoparticle (ITO np) inks as a wet process. The ITO nps with a mean diameter of 25?nm were synthesized by the controlled thermolysis of a mixture of indium complexes and tin complexes. After the direct screen printing of ITO np inks on GaN:Eu LED substrates and sintering at 850?C for 10?min under atmospheric conditions, the resistivity of the ITO film was 5.2?m??cm. The fabricated LED up to 3?mm square surface emitted red light when the on-voltage was exceeded.

  6. The Doral Group Ltd | Open Energy Information

    Open Energy Info (EERE)

    Group Ltd Jump to: navigation, search Name: The Doral Group Ltd. Place: Ramat Gan, Israel Product: Ramat Gan-based investment, development and holding company. References: The...

  7. Phase-Field Simulations of GaN Growth by Selective Area Epitaxy on Complex Mask Geometries

    SciTech Connect (OSTI)

    Aagesen, Larry K.; Coltrin, Michael Elliott; Han, Jung; Thornton, Katsuyo

    2015-05-15

    Three-dimensional phase-field simulations of GaNgrowth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.

  8. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  9. Combined Retrieval, Microphysical Retrievals and Heating Rates

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Feng, Zhe

    2013-02-22

    Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

  10. Combined Retrieval, Microphysical Retrievals and Heating Rates

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Feng, Zhe

    Microphysical retrievals and heating rates from the AMIE/Gan deployment using the PNNL Combined Retrieval.

  11. “Nodal Gap” induced by the incommensurate diagonal spin density modulation in underdoped high- Tc superconductors

    SciTech Connect (OSTI)

    Zhou, Tao; Gao, Yi; Zhu, Jian -Xin

    2015-03-07

    Recently it was revealed that the whole Fermi surface is fully gapped for several families of underdoped cuprates. The existence of the finite energy gap along the d-wave nodal lines (nodal gap) contrasts the common understanding of the d-wave pairing symmetry, which challenges the present theories for the high-Tcsuperconductors. Here we propose that the incommensurate diagonal spin-density-wave order can account for the above experimental observation. The Fermi surface and the local density of states are also studied. Our results are in good agreement with many important experiments in high-Tcsuperconductors.

  12. Lambda network having 2.sup.m-1 nodes in each of m stages with each node coupled to four other nodes for bidirectional routing of data packets between nodes

    DOE Patents [OSTI]

    Napolitano, Jr., Leonard M.

    1995-01-01

    The Lambda network is a single stage, packet-switched interprocessor communication network for a distributed memory, parallel processor computer. Its design arises from the desired network characteristics of minimizing mean and maximum packet transfer time, local routing, expandability, deadlock avoidance, and fault tolerance. The network is based on fixed degree nodes and has mean and maximum packet transfer distances where n is the number of processors. The routing method is detailed, as are methods for expandability, deadlock avoidance, and fault tolerance.

  13. Lidar for remote sensing; Proceedings of the Meeting, Berlin, Germany, June 24-26, 1992

    SciTech Connect (OSTI)

    Becherer, R.J.; Werner, C.

    1992-01-01

    The present volume on lidar for remote sensing discusses lidar system techniques for remote sensing of atmospheric pollution, airborne and surface-based lidar for environmental sensing of water and oceans, Doppler lidar for wind sensing and related measurement, aerosol measurements using lidar, ozone, water vapor, temperature, and density sensing with lidar systems, and new lidar technology systems and concepts. Attention is given to remote sensing of air pollution over large European cities by lidar, differential absorption lidar monitoring of atmospheric atomic mercury, an experimental evaluation of an airborne depth-sounding lidar, and remote sensing of the sea by tunable multichannel lidar. Topics addressed include recent developments in lidar techniques to measure the wind in the middle atmosphere, recent stratospheric aerosol measurements with a combined Raman elastic-backscatter lidar, the development of an eye-safe IR aerosol lidar, and temperature measurement by rotational Raman lidar.

  14. EM Gains Insight from Germany on Salt-Based Repositories | Department of

    Energy Savers [EERE]

    Energy Aims for Major Accomplishments in 2013 Budget Request EM Aims for Major Accomplishments in 2013 Budget Request February 13, 2012 - 12:00pm Addthis EM Aims for Major Accomplishments in 2013 Budget Request WASHINGTON, D.C. - Today EM Acting Assistant Secretary David Huizenga rolled out EM's $5.65 billion budget request for fiscal year 2013 that would support major accomplishments in all areas of the program's environmental cleanup mission. Highlights of scheduled accomplishments across

  15. Foreign Travel Report - West Germany and Belgium - September 9 - September 13, 1985

    SciTech Connect (OSTI)

    Bickford, D.F.

    2001-05-17

    This report discusses visitation of the PAMELA plant which provided an opportunity to observe the operation and design of this European waste solidification facility. The aim of the workshop was to exchange expertise relative to the safe vitrification of HLLW in order to determine which areas were technologically solved and which areas required further study.

  16. 2013-02-26 11.00 Why Are Residential PV Prices in Germany So...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... within our group over the past four to five years has been tracking and analyzing ... publications. I also want to extend a big thank-you to the SunShot program which has ...

  17. The legal status of UF{sub 6}-cylinder testing and licensing in Germany (and Europe)

    SciTech Connect (OSTI)

    Wieser, K.E.; Tietze, A.

    1991-12-31

    New German and European transport regulations for road and rail transport of UF{sub 6}-cylinders are presented, in particular those provisions which have direct impact on the majority of cylinders used in shipments touching ADR and RID member states. First experiences and difficulties in it`s application are highlighted taking into account experiences of a for running German regulation. A summary of research efforts on the behaviour of cylinders in fire environments concludes the paper.

  18. DISMANTLING OF THE UPPER RPV COMPONENTS OF THE KARLSRUHE MULTI-PURPOSE RESEARCH REACTOR (MZFR), GERMANY

    SciTech Connect (OSTI)

    Prechtl, E.; Suessdorf, W.

    2003-02-27

    The Multi-purpose Research Reactor was a pressurized-water reactor cooled and moderated with heavy water. It was built from 1961 to 1966 and went critical for the first time on 29 September 1965. After nineteen years of successful operation, the reactor was de-activated on 3 May 1984. The reactor had a thermal output of 200 MW and an electrical output of 50 MW. The MZFR not only served to supply electrical power, but also as a test bed for: - research into various materials for reactor building (e. g. zirkaloy), - the manufacturing and operating industry to gain experience in erection and operation, - training scientific and technical reactor staff, and - power supply (first nuclear combined-heat-and-power system, 1979-1984). The experience gained in operating the MZFR was very helpful for the development and operation of power reactors. At first, safe containment and enclosure of the plant was planned, but then it was decided to dismantle the plant completely, step by step, in view o f the clear advantages of this approach. The decommissioning concept for the complete elimination of the plant down to a green-field site provides for eight steps. A separate decommissioning license is required for each step. As part of the dismantling, about 72,000 Mg [metric tons] of concrete and 7,200 Mg of metal (400 Mg RPV) must be removed. About 700 Mg of concrete (500 Mg biological shield) and 1300 Mg of metal must be classified as radioactive waste.

  19. Release and disposal of materials during decommissioning of Siemens MOX fuel fabrication plant at Hanau, Germany

    SciTech Connect (OSTI)

    Koenig, Werner; Baumann, Roland

    2007-07-01

    In September 2006, decommissioning and dismantling of the Siemens MOX Fuel Fabrication Plant in Hanau were completed. The process equipment and the fabrication buildings were completely decommissioned and dismantled. The other buildings were emptied in whole or in part, although they were not demolished. Overall, the decommissioning process produced approximately 8500 Mg of radioactive waste (including inactive matrix material); clearance measurements were also performed for approximately 5400 Mg of material covering a wide range of types. All the equipment in which nuclear fuels had been handled was disposed of as radioactive waste. The radioactive waste was conditioned on the basis of the requirements specified for the projected German final disposal site 'Schachtanlage Konrad'. During the pre-conditioning, familiar processes such as incineration, compacting and melting were used. It has been shown that on account of consistently applied activity containment (barrier concept) during operation and dismantling, there has been no significant unexpected contamination of the plant. Therefore almost all the materials that were not a priori destined for radioactive waste were released without restriction on the basis of the applicable legal regulations (chap. 29 of the Radiation Protection Ordinance), along with the buildings and the plant site. (authors)

  20. Cytotoxicity of settling particulate matter and sediments of the Neckar River (Germany) during a winter flood

    SciTech Connect (OSTI)

    Hollert, H.; Duerr, M.; Erdinger, L.; Braunbeck, T.

    2000-03-01

    To investigate the cytotoxic and genotoxic potentials of settling particulate matter (SPM) carried by the Neckar River, a well-studied model for a lock-regulated river in central Europe, during a flood, acute cytotoxicity was investigated using the fibroblast-like fish cell line RTG-2 with the neutral red retention, the succinic acid dehydrogenase (MTT), and the lactatedehydrogenase (LDH) release assays as well as microscopic inspection as endpoints. Genotoxicity of water, pore water, sediments, and SPM were assessed using the Ames test. Different extraction methods (Soxhlet extraction with solvents of variable polarity as well as a fluid/fluid extraction according to pH) in addition to a supplementation of biotests with 59 fractions from the liver of {beta}-naphthoflavone/phenobarbital-induced rats allowed a further characterization of the biological damage. Both sediments and SPM extracts caused cytotoxic effects in RTG-2 cells. Cytotoxicity was found to increase significantly with polarity of extracting solvents. Following extraction according to pH, cytotoxicity could be attributed mainly to neutral substances, whereas the slightly acid and basic fractions already showed little or no cytotoxicity. Samples taken during the period of flood rise showed the highest cytotoxic activities. Cytotoxicity was significantly enhanced by the addition of S9 preparations. In contrast, no genotoxic activity was found in native surface waters, pore waters, and SPM.

  1. Why Are Resiential PV Prices in Germany So Much Lower Than in...

    Broader source: Energy.gov (indexed) [DOE]

    The U.S. Department of Energy (DOE) SunShot Initiative, in conjunction with the Lawrence Berkeley National Laboratory (LBNL) discusses the installed price of residential PV being ...

  2. Investigation of surface-plasmon coupled red light emitting InGaN/GaN multi-quantum well with Ag nanostructures coated on GaN surface

    SciTech Connect (OSTI)

    Li, Yi; Liu, Bin E-mail: rzhang@nju.edu.cn; Zhang, Rong E-mail: rzhang@nju.edu.cn; Xie, Zili; Zhuang, Zhe; Dai, JiangPing; Tao, Tao; Zhi, Ting; Zhang, Guogang; Chen, Peng; Ren, Fangfang; Zhao, Hong; Zheng, Youdou

    2015-04-21

    Surface-plasmon (SP) coupled red light emitting InGaN/GaN multiple quantum well (MQW) structure is fabricated and investigated. The centre wavelength of 5-period InGaN/GaN MQW structure is about 620?nm. The intensity of photoluminescence (PL) for InGaN QW with naked Ag nano-structures (NS) is only slightly increased due to the oxidation of Ag NS as compared to that for the InGaN QW. However, InGaN QW with Ag NS/SiO{sub 2} structure can evidently enhance the emission efficiency due to the elimination of surface oxide layer of Ag NS. With increasing the laser excitation power, the PL intensity is enhanced by 25%53% as compared to that for the SiO{sub 2} coating InGaN QW. The steady-state electric field distribution obtained by the three-dimensional finite-difference time-domain method is different for both structures. The proportion of the field distributed in the Ag NS for the GaN/Ag NS/SiO{sub 2} structure is smaller as compared to that for the GaN/naked Ag NS structure. As a result, the energy loss of localized SP modes for the GaN/naked Ag NS structure will be larger due to the absorption of Ag layer.

  3. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N. E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M. E-mail: Martin.Kuball@bristol.ac.uk; Paskova, T.; Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 ; Evans, K. R.; Leach, J.; Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 ; Li, X.; Özgür, Ü.; Morkoç, H.; Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D.

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  4. Visible-light absorption and large band-gap bowing of GaN1-xSbx from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sheetz, R. Michael; Richter, Ernst; Andriotis, Antonis N.; Lisenkov, Sergey; Pendyala, Chandrashekhar; Sunkara, Mahendra K.; Menon, Madhu

    2011-08-01

    Applicability of the Ga(Sbx)N1-x alloys for practical realization of photoelectrochemical water splitting is investigated using first-principles density functional theory incorporating the local density approximation and generalized gradient approximation plus the Hubbard U parameter formalism. Our calculations reveal that a relatively small concentration of Sb impurities is sufficient to achieve a significant narrowing of the band gap, enabling absorption of visible light. Theoretical results predict that Ga(Sbx)N1-x alloys with 2-eV band gaps straddle the potential window at moderate to low pH values, thus indicating that dilute Ga(Sbx)N1-x alloys could be potential candidates for splitting water under visible light irradiation.

  5. Solar IT | Open Energy Information

    Open Energy Info (EERE)

    IT Jump to: navigation, search Name: Solar IT Place: Ramat-Gan, Israel Product: Ramat-Gan-based supplier and assemblier of PV-based systems for domestic and industrial use....

  6. ARM - Facility News Article

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5, 2011 [Facility News] Team Continues Campaign Planning on Gan Island Bookmark and Share Mike Ritsche, technical operations manager for the AMF2, discusses instrumentation specifics with Gan airport and MMS officials. Mike Ritsche, technical operations manager for the AMF2, discusses instrumentation specifics with Gan airport and MMS officials. For its first international field campaign, the second ARM Mobile Facility (AMF2) is scheduled to operate on Gan Island in the Indian Ocean for the ARM

  7. ARM - Facility News Article

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    14, 2012 [Facility News] Data Collection from Mobile Facility on Gan Island Suspended Bookmark and Share Local weather balloon launch volunteers pose with the AMF team on Gan Island after completing their training. Local weather balloon launch volunteers pose with the AMF team on Gan Island after completing their training. Due to sudden unrest in the Maldives in early February, operations of the ARM Mobile Facility on Gan Island were suspended on February 9, 2012, and all instruments have been

  8. Comparison of the incentives used to stimulate energy production in Japan, France, West Germany, and the United States

    SciTech Connect (OSTI)

    Cole, R.J.; Sommers, P.; Eschbach, C.; Sheppard, W.J.; Lenerz, D.E.; Huelshoff, M.; Marcus, A.A.

    1981-09-01

    This volume represents the culmination of a five-year research effort examining the incentives used to stimulate energy production in four countries, and the incentives used to stimulate energy consumption in one country. Following the theoretical approach developed for studying US energy incentives, the researchers in each country classified incentives into the following six categories: (1) Taxation, including exemption from or reduction of existing taxes; (2) Disbursements, in which the national government distributes money without requiring anything in return; (3) Requirements, including demands made by the government, backed by civil or criminal sanctions; (4) Traditional Services, including those almost always provided exclusively by a governmental entity; (5) Nontraditional Services, including those sometimes performed by non-governmental entities, as well as governmental entities (e.g., research and development); and (6) Market Activities, including government involvement in the market under conditions similar to those faced by non-governmental producers or consumers. A complete list of research reports prepared in the Federal Incentives series is provided in the Appendix.

  9. Quantitative comparison between PGNAA measurements and MCNP calculations in view of the characterization of radioactive wastes in Germany and France

    SciTech Connect (OSTI)

    Mauerhofer, E.; Havenith, A.; Kettler, J.; Carasco, C.; Payan, E.; Ma, J. L.; Perot, B.

    2013-04-19

    The Forschungszentrum Juelich GmbH (FZJ), together with the Aachen University Rheinisch-Westfaelische Technische Hochschule (RWTH) and the French Alternative Energies and Atomic Energy Commission (CEA Cadarache) are involved in a cooperation aiming at characterizing toxic and reactive elements in radioactive waste packages by means of Prompt Gamma Neutron Activation Analysis (PGNAA). The French and German waste management agencies have indeed defined acceptability limits concerning these elements in view of their projected geological repositories. A first measurement campaign was performed in the new Prompt Gamma Neutron Activation Analysis (PGNAA) facility called MEDINA, at FZJ, to assess the capture gamma-ray signatures of some elements of interest in large samples up to waste drums with a volume of 200 liter. MEDINA is the acronym for Multi Element Detection based on Instrumental Neutron Activation. This paper presents MCNP calculations of the MEDINA facility and quantitative comparison between measurement and simulation. Passive gamma-ray spectra acquired with a high purity germanium detector and calibration sources are used to qualify the numerical model of the crystal. Active PGNAA spectra of a sodium chloride sample measured with MEDINA then allow for qualifying the global numerical model of the measurement cell. Chlorine indeed constitutes a usual reference with reliable capture gamma-ray production data. The goal is to characterize the entire simulation protocol (geometrical model, nuclear data, and postprocessing tools) which will be used for current measurement interpretation, extrapolation of the performances to other types of waste packages or other applications, as well as for the study of future PGNAA facilities.

  10. New Design for an HLW Repository (for Spent Fuel and Waste from Reprocessing) in a Salt Formation in Germany - 12213

    SciTech Connect (OSTI)

    Bollingerfehr, Wilhelm; Filbert, Wolfgang; Lerch, Christian; Mueller-Hoeppe, Nina; Charlier, Frank

    2012-07-01

    In autumn 2010, after a 10-year moratorium, exploration was resumed in Gorleben, the potential site for a German HLW repository. At the same time, the Federal Government launched a two-year preliminary safety analysis to assess whether the salt dome at Gorleben is suitable to host all heat-generating radioactive waste generated by German NPPs based on the waste amounts expected at that time. The revised Atomic Energy Act of June 2011 now stipulates a gradual phase-out of nuclear energy production by 2022, which is 13 years earlier than expected in 2010. A repository design was developed which took into account an updated set of data on the amounts and types of expected heat-generating waste, the documented results of the exploration of the Gorleben salt dome, and the new 'Safety Requirements Governing the Final Disposal of Heat-Generating Radioactive Waste' of 30 September, 2010. The latter has a strong influence on the conceptual designs as it requires that retrievability of all waste containers is possible within the repository lifetime. One design considered that all waste containers will be disposed of in horizontal drifts of a geologic repository, while the other design considered that all waste containers will be disposed of in deep vertical boreholes. For both options (emplacement in drifts/emplacement in vertical boreholes), the respective design includes a selection of waste containers, the layout of drifts, respectively lined boreholes, a description of emplacement fields, and backfilling and sealing measures. The design results were described and displayed and the differences between the two main concepts were elaborated and discussed. For the first time in both repository designs the requirement was implemented to retrieve waste canisters during the operational phase. The measures to fulfill this requirement and eventually the consequences were highlighted. It was pointed out that there arises the need to keep transport- and storage casks in adequate numbers and interim storage facilities available until the repository is closed. (authors)

  11. EEnergy Project "MeRegio" (Smart Grid Project) (Baden-Wrttemberg...

    Open Energy Info (EERE)

    Baden-Wrttemberg, Germany) Jump to: navigation, search Project Name EEnergy Project "MeRegio" Country Germany Headquarters Location Baden-Wrttemberg, Germany Coordinates...

  12. ARM - Data Announcements Article

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    October 8, 2014 [Data Announcements] Large-Scale Forcing Data for AMIE-GAN Updated Bookmark and Share Analysis domain for Revelle, with diameters of 300 km. The red star denotes the ship location. Analysis domain for Revelle, with diameters of 300 km. The red star denotes the ship location. The ARM Madden-Julian Oscillation [MJO] Investigation Experiment [AMIE] on Gan Island, or AMIE-Gan field campaign collected necessary data for studies of the initiation, propagation, and evolution of MJO and

  13. KOH based selective wet chemical etching of AlN, AlxGa1-xN, and GaN crystals: A way towards substrate removal in deep ultraviolet-light emitting diode

    SciTech Connect (OSTI)

    Guo, W; Kirste, R; Bryan, I; Bryan, Z; Hussey, L; Reddy, P; Tweedie, J; Collazo, R; Sitar, Z

    2015-02-23

    A controllable and smooth potassium hydroxide-based wet etching technique was developed for the AlGaN system. High selectivity between AlN and AlxGa1-xN (up to 12 x) was found to be critical in achieving effective substrate thinning or removal for AlGaN-based deep ultraviolet light emitting diodes, thus increasing light extraction efficiency. The mechanism of high selectivity of AlGaN as a function of Al composition can be explained as related to the formation and dissolution of oxide/hydroxide on top of N-polar surface. Cross-sectional transmission electron microscopic analysis served as ultimate proof that these hillocks were not related to underlying threading dislocations. (C) 2015 AIP Publishing LLC.

  14. Dirkshof Erneuerbare Energien | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Dirkshof Erneuerbare Energien Place: Reuenkge, Germany Zip: 25821 Product: Reuenkge, Germany based project developer. Coordinates:...

  15. Light-Emitting Diodes on Semipolar Bulk Gallium Nitride Substrate

    Broader source: Energy.gov [DOE]

    This project is producing high-efficiency semipolar light-emitting diodes (LEDs) on low-defect bulk gallium nitride (GaN) substrates.

  16. Beamline 10.3.1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Trace-element analysis with high spatial resolution (e.g., silicon solar cells, GaN, atmospheric particulates, environmental soil samples, and biological samples) Scientific...

  17. Sandia Energy - Solid-State Lighting

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Energy Efficiency Permalink Gallery Assessment of deep level defects in m-plane GaN grown by metalorganic chemical vapor deposition Energy Efficiency, News, News & Events,...

  18. Field Mapping At Raft River Geothermal Area (1993) | Open Energy...

    Open Energy Info (EERE)

    extension over broad areas of the northern Basin and Range. References Dumitru, T.; Miller, E.; Savage, C.; Gans, P.; Brown, R. (1 April 1993) Fission track evidence for...

  19. Fission track evidence for widespread early to Middle miocene...

    Open Energy Info (EERE)

    major extension over broad areas of the northern Basin and Range. Authors Dumitru, T.; Miller, E.; Savage, C.; Gans, P.; Brown and R. Published Geological Society of America,...

  20. Field Mapping At Northern Basin and Range Geothermal Region ...

    Open Energy Info (EERE)

    extension over broad areas of the northern Basin and Range. References Dumitru, T.; Miller, E.; Savage, C.; Gans, P.; Brown, R. (1 April 1993) Fission track evidence for...

  1. Search for: All records | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    and shape memory behavior of titania and yttria co-doped zirconia Zeng, Xiao Mei ; Du, Zehui ; Schuh, Christopher A. ; Tamura, Nobumichi ; Gan, Chee Lip April 2016 , Elsevier

  2. ASU EFRC - Postdoctoral fellows

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Postdoctoral fellows Barun Das Postdoctoral Fellow Bhupesh Goyal Postdoctoral fellow Jackson Megiatto Postdoctoral Fellow Lu Gan Postdoctoral fellow Matthieu Koepf Postdoctoral...

  3. News Item

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A team of multidisciplinary researchers at the Berkeley Lab's Molecular Foundry used ... Manipulating GaN nanostructures offers the ability to custom design bulk material ...

  4. Shikun Binui Arison Group | Open Energy Information

    Open Energy Info (EERE)

    Ramat Gan, Israel Zip: 55215 Product: String representation "Shikun & Binui ... gy and ecology." is too long. References: Shikun & Binui Arison Group1 This article is a stub. You...

  5. SBIR and STTR Topics FY 2015 Phase Release 2

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... thoughtful theoretical predictions and experimental data. ... Phase Advances in the design and synthesis of solid ... Structural Defects in GaN Revealed by Transmission Electron ...

  6. Center for Energy Nanoscience at USC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LED Nanowire LEDs GaN based light emitting diodes (LEDs) are a key technology for high brightness LEDs. Although already successful commercially, fundamental physical and device...

  7. Resonant energy transfer between Eu luminescent sites and their local

    Office of Scientific and Technical Information (OSTI)

    geometry in GaN (Journal Article) | SciTech Connect Resonant energy transfer between Eu luminescent sites and their local geometry in GaN Citation Details In-Document Search Title: Resonant energy transfer between Eu luminescent sites and their local geometry in GaN Eu-doped GaN is a solid state material with promising features for quantum manipulation. In this study, we investigate the population dynamics of Eu in ions in this system by resonant excitation. From differences in the emission

  8. Resonant energy transfer between Eu luminescent sites and their...

    Office of Scientific and Technical Information (OSTI)

    Resonant energy transfer between Eu luminescent sites and their local geometry in GaN Citation Details In-Document Search Title: Resonant energy transfer between Eu luminescent ...

  9. Housing and Construction Holding Company | Open Energy Information

    Open Energy Info (EERE)

    Housing and Construction Holding Company Jump to: navigation, search Name: Housing and Construction Holding Company Place: Ramat-Gan, Israel Zip: 52215 Product: Israel-based...

  10. Growth process for gallium nitride porous nanorods

    DOE Patents [OSTI]

    Wildeson, Isaac Harshman; Sands, Timothy David

    2015-03-24

    A GaN nanorod and formation method. Formation includes providing a substrate having a GaN film, depositing SiN.sub.x on the GaN film, etching a growth opening through the SiN.sub.x and into the GaN film, growing a GaN nanorod through the growth opening, the nanorod having a nanopore running substantially through its centerline. Focused ion beam etching can be used. The growing can be done using organometallic vapor phase epitaxy. The nanopore diameter can be controlled using the growth opening diameter or the growing step duration. The GaN nanorods can be removed from the substrate. The SiN.sub.x layer can be removed after the growing step. A SiO.sub.x template can be formed on the GaN film and the GaN can be grown to cover the SiO.sub.x template before depositing SiN.sub.x on the GaN film. The SiO.sub.x template can be removed after growing the nanorods.

  11. Intrinsic Semiconductor | Open Energy Information

    Open Energy Info (EERE)

    Intrinsic Semiconductor is a privately held emerging growth company focusing on materials and device technologies based on silicon carbide (SiC) and gallium nitride (GaN)...

  12. Cree Inc | Open Energy Information

    Open Energy Info (EERE)

    North Carolina Zip: 27703 Product: Cree develops and manufactures semiconductor materials and devices based on silicon carbide (SiC), gallium nitride (GaN), silicon (Si) and...

  13. Ultra-thin ohmic contacts for p-type nitride light emitting devices

    DOE Patents [OSTI]

    Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

    2014-06-24

    A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

  14. SHE 2015

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Confirmed Participants D. Ackermann, GSI, Germany G. Adamian, BLTP JINR, Russia A. Afanasjev, Mississippi State University, USA N. Aksenov, FLNR JINR, Russia H. Backe, University of Mainz, Germany M. Barbui, TAMU, USA W. Barth, GSI, Germany W. Bassichis, TAMU, USA M. Block, GSI, Germany R. Boll, ORNL, USA N. Brewer, ORNL, USA G. Chubarian, TAMU, USA S. Dmitriev, FLNR JINR, Russia C. Duellman, University of Mainz, Germany K. Eberhardt, University of Mainz, Germany R. Eichler, PSI, Switzerland J.

  15. Defect-engineered GaN:Mg nanowire arrays for overall water splitting under violet light

    SciTech Connect (OSTI)

    Kibria, M. G.; Chowdhury, F. A.; Zhao, S.; Mi, Z.; Trudeau, M. L.; Guo, H.

    2015-03-16

    We report that by engineering the intra-gap defect related energy states in GaN nanowire arrays using Mg dopants, efficient and stable overall neutral water splitting can be achieved under violet light. Overall neutral water splitting on Rh/Cr{sub 2}O{sub 3} co-catalyst decorated Mg doped GaN nanowires is demonstrated with intra-gap excitation up to 450?nm. Through optimized Mg doping, the absorbed photon conversion efficiency of GaN nanowires reaches ?43% at 375450?nm, providing a viable approach to extend the solar absorption of oxide and non-oxide photocatalysts.

  16. Infrastructure Security EXCEPTIONAL SERVICE IN THE NATIONAL INTEREST

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    741P GaN for LED Lighting Displays and High Power Electronics The LED market is one of the fastest growing worldwide, driven by demand for clean solid state lighting, LED displays, and mobile devices. GaN-based materials are essential for white LEDs used in solid state lighting and flat panel displays as well as high power electromics where GaN transistors are emerging as the high power device of choice for military communications and cell phone base stations. Current GaN devices are typically

  17. ARM - Data Announcements Article

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    August 19, 2013 [Data Announcements] Large-Scale Forcing Data for AMIE-Gan Available for Evaluation Bookmark and Share Large-scale forcing data from the SMART-R precipitation radar (top) and Omega (bottom). Large-scale forcing data from the SMART-R precipitation radar (top) and Omega (bottom). The large-scale forcing data for the ARM MJO Investigation Experiment (AMIE) on Gan Island in the Maldives are now available for use and evaluation by the cloud modeling community. AMIE-Gan was conducted

  18. Clean Urban Transport for Europe CUTE | Open Energy Information

    Open Energy Info (EERE)

    Transport for Europe CUTE Jump to: navigation, search Name: Clean Urban Transport for Europe (CUTE) Place: Ulm, Germany Zip: 89077 Product: Germany-based, European Union project...

  19. Union zur F rderung von Oel und Proteinpflanzen Ufop | Open Energy...

    Open Energy Info (EERE)

    zur F rderung von Oel und Proteinpflanzen Ufop Jump to: navigation, search Name: Union zur Frderung von Oel- und Proteinpflanzen (Ufop) Place: Germany Product: Germany-based...

  20. Reversible inactivation of CO dehydrogenase with thiol compounds...

    Office of Scientific and Technical Information (OSTI)

    Department of Microbiology, University of Bayreuth, 95440 Bayreuth (Germany) Department of Chemistry, University of Paderborn, 33098 Paderborn (Germany) Institute of Biochemistry ...

  1. Habdank PV Montagesysteme GmbH Co KG Habdank PV Mounting Systems...

    Open Energy Info (EERE)

    Germany Zip: 73037 Product: Germany-based manufacturer of mounting systems for PV installations. References: Habdank PV-Montagesysteme GmbH & Co KG Habdank PV Mounting...

  2. Arkona Windpark Entwicklungs GmbH | Open Energy Information

    Open Energy Info (EERE)

    Place: Stralsund, Mecklenburg-Western Pomerania, Germany Zip: 18439 Sector: Wind energy Product: Offshore wind project developer in Northern Germany. Coordinates:...

  3. EEnergy Project "MeRegio" (Smart Grid Project) | Open Energy...

    Open Energy Info (EERE)

    Jump to: navigation, search Project Name EEnergy Project "MeRegio" Country Germany Headquarters Location Gppingen, Germany Coordinates 48.703159, 9.653999 Loading map......

  4. Mini Berlin powered by Vattenfall (Smart Grid Project) | Open...

    Open Energy Info (EERE)

    Jump to: navigation, search Project Name Mini Berlin powered by Vattenfall Country Germany Headquarters Location Berlin, Germany Coordinates 52.523403, 13.4114 Loading...

  5. WindStrom Innovative Energiesysteme GmbH | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: WindStrom Innovative Energiesysteme GmbH Place: Edemissen, Germany Zip: 31234 Sector: Wind energy Product: Germany-based wind project developer and...

  6. Pilotprojekt Markisches Viertel (Smart Grid Project) | Open Energy...

    Open Energy Info (EERE)

    Project) Jump to: navigation, search Project Name Pilotprojekt Markisches Viertel Country Germany Headquarters Location Berlin, Germany Coordinates 52.523403, 13.4114 Loading...

  7. Voith Hydro Ocean Current Technologies | Open Energy Information

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    Ocean Current Technologies Jump to: navigation, search Name: Voith Hydro Ocean Current Technologies Place: Germany Sector: Hydro Product: Germany-based JV between Voith Hydro and...

  8. Nastro Environmental Technology GmbH | Open Energy Information

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    Nastro Environmental Technology GmbH Jump to: navigation, search Name: Nastro Environmental Technology GmbH Place: Meppen, Germany Zip: 49716 Product: Germany-based PV system...

  9. Ralos Group | Open Energy Information

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    Ralos Group Jump to: navigation, search Name: Ralos Group Place: Michelstadt, Germany Zip: D-64720 Sector: Solar Product: Germany-based solar project developer that specialises in...

  10. Ferrostaal eSolar JV | Open Energy Information

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    Ferrostaal eSolar JV Jump to: navigation, search Name: Ferrostaal & eSolar JV Place: Germany Sector: Solar Product: Germany-based solar thermal electricity generation joint...

  11. Gemballa Electronics GmbH | Open Energy Information

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    GmbH Jump to: navigation, search Name: Gemballa Electronics GmbH Place: Kaltenkirchen, Germany Zip: 24586 Product: Germany-based produces semiconductor and silicon components. The...

  12. Corntec GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Corntec GmbH Place: Twist, Lower Saxony, Germany Zip: 49767 Product: Investor in biogas projects in Germany. References: Corntec...

  13. Bernried Erdwarme AG | Open Energy Information

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    Bernried Erdwarme AG Jump to: navigation, search Name: Bernried Erdwarme AG Place: Germany Sector: Geothermal energy Product: Germany-based geothermal development company....

  14. VWind AG | Open Energy Information

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    VWind AG Jump to: navigation, search Name: VWind AG Place: Germany Sector: Wind energy Product: Germany-based offshore wind installation company. References: VWind AG1 This...

  15. Energy Alliance | Open Energy Information

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    Alliance Jump to: navigation, search Name: Energy Alliance Place: Freiburg, Germany Zip: 79110 Sector: Solar Product: Germany-based, research group at the Fraunhofer Institute for...

  16. Wiesenhof | Open Energy Information

    Open Energy Info (EERE)

    Wiesenhof Jump to: navigation, search Name: Wiesenhof Place: Germany Product: Germany-based PHW Group company, is local poultry company. References: Wiesenhof1 This article is a...

  17. AFTER A Framework for electrical power sysTems vulnerability...

    Open Energy Info (EERE)

    Germany) Jump to: navigation, search Project Name AFTER A Framework for electrical power sysTems vulnerability identification, dEfense and Restoration Country Germany Coordinates...

  18. Interstrom AG | Open Energy Information

    Open Energy Info (EERE)

    AG Jump to: navigation, search Name: Interstrom AG Place: Bayreuth, Bavaria, Germany Zip: 95448 Sector: Solar Product: Germany-based electricity provider. The firm is...

  19. SolarHybrid AG | Open Energy Information

    Open Energy Info (EERE)

    SolarHybrid AG Jump to: navigation, search Name: SolarHybrid AG Place: Germany Sector: Solar Product: Germany-based solar thermal hybrid product manufacturer References:...

  20. Chorus Systems | Open Energy Information

    Open Energy Info (EERE)

    Chorus Systems Jump to: navigation, search Name: Chorus Systems Place: Sankt Augustin, Germany Zip: D-53757 Product: Plans and realises PV installations in Germany. References:...

  1. Geothermeon | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: Geothermeon Place: Landau i.d. Pfalz, Rhineland-Palatinate, Germany Zip: 76829 Sector: Geothermal energy Product: Germany-based geothermal project...

  2. Solare AG | Open Energy Information

    Open Energy Info (EERE)

    AG Jump to: navigation, search Name: Solare AG Place: Cologne, North Rhine-Westphalia, Germany Zip: 50678 Sector: Solar Product: Germany-based equipment manufacturer and developer...

  3. BIOGRAPHICAL SKETCH

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (865) 241-5470 balken@ornl.gov Publication Education Technical University Darmstadt, Germany Materials Science Diploma, 2003 Technical University Darmstadt, Germany Materials...

  4. ARM - Black Forest News

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    News Campaign Images Black Forest News ARM Mobile Facility Completes Field Campaign in Germany January 15, 2008 Microwave Radiometers Put to the Test in Germany September 15, 2007...

  5. SVAROS Ventures | Open Energy Information

    Open Energy Info (EERE)

    Ventures Jump to: navigation, search Name: SVAROS Ventures Place: Munich, Bavaria, Germany Product: Germany-based VCgrowth capital investor in clean technology and technology...

  6. AE Photonics | Open Energy Information

    Open Energy Info (EERE)

    Photonics Jump to: navigation, search Name: AE Photonics Place: Germany Product: Germany-based PV system and component supplier References: AE Photonics1 This article is a stub....

  7. RWE Innogy | Open Energy Information

    Open Energy Info (EERE)

    Innogy Jump to: navigation, search Name: RWE Innogy Place: Essen, Germany Zip: 45141 Sector: Renewable Energy Product: Germany-based subsidiary of RWE responsible for RWE's...

  8. Vento Ludens | Open Energy Information

    Open Energy Info (EERE)

    Ludens Jump to: navigation, search Name: Vento Ludens Place: Jettingen-Scheppach, Germany Zip: 89343 Sector: Wind energy Product: Vento Ludens is a Germany based wind project...

  9. Landwind GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Landwind GmbH Place: Gevensleben, Lower Saxony, Germany Zip: 38384 Product: Small project developer, focused in Lower Saxony, Germany....

  10. WK Windkraft Kontor | Open Energy Information

    Open Energy Info (EERE)

    Kontor Jump to: navigation, search Name: WK Windkraft-Kontor Place: Grebenstein, Germany Zip: D-34393 Sector: Wind energy Product: Germany-based wind energy project...

  11. Sunselex | Open Energy Information

    Open Energy Info (EERE)

    Sunselex Jump to: navigation, search Name: Sunselex Place: Munchen, Bavaria, Germany Zip: D-81829 Sector: Solar Product: Germany based provider in the area of assembly and...

  12. HAASE Energietechnik Group | Open Energy Information

    Open Energy Info (EERE)

    Group Jump to: navigation, search Name: HAASE Energietechnik Group Place: Neumuenster, Germany Zip: D-24531 Product: Germany-based, environmental engineering and plant construction...

  13. Nordex | Open Energy Information

    Open Energy Info (EERE)

    search Logo: Nordex Name: Nordex Address: Langenhorner Chaussee 600 22419 Hamburg Germany Place: Hamburg, Germany Sector: Wind energy Product: Wind Turbines Year Founded: 1992...

  14. Offshore Wind Technologie GmbH OWT | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Offshore Wind Technologie GmbH (OWT) Place: Leer, Germany Zip: 26789 Sector: Wind energy Product: Germany-based wind project developer....

  15. Formaro GmbH | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Formaro GmbH Place: Netphen, North Rhine-Westphalia, Germany Zip: 57250 Sector: Renewable Energy, Solar Product: Germany-based renewable energy...

  16. Hansatronic GmbH | Open Energy Information

    Open Energy Info (EERE)

    search Name: Hansatronic GmbH Place: Villingen-Schwenningen, Baden-Wrttemberg, Germany Zip: 78052 Product: Germany-based manufacturer of PV connectors and junction boxes....

  17. Enovos Group | Open Energy Information

    Open Energy Info (EERE)

    Enovos Group Jump to: navigation, search Name: Enovos Group Place: Germany Sector: Solar Product: Germany-based utility. The utility has interests in solar energy. References:...

  18. European Business School | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: European Business School Place: Oestrich-Winkel, Germany Zip: D-65375 Sector: Efficiency Product: An Germany-based business school focusing on...

  19. Compel Electronics GmbH | Open Energy Information

    Open Energy Info (EERE)

    Electronics GmbH Jump to: navigation, search Name: Compel Electronics GmbH Place: Germany Product: Germany-based manufacturer of electronic cables and interconnections. The...

  20. Desertec Foundation | Open Energy Information

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    Foundation Jump to: navigation, search Name: Desertec Foundation Place: Munchen, Germany Zip: 80802 Product: String representation "Germany-based D ... ial Initiative." is...

  1. Freund | Open Energy Information

    Open Energy Info (EERE)

    Freund Jump to: navigation, search Name: Freund Place: Germany Sector: Wind energy Product: Freund owns three wind turbines in Neu Zauche, Germany. References: Freund1 This...

  2. In Trust AG | Open Energy Information

    Open Energy Info (EERE)

    Trust AG Jump to: navigation, search Name: in-Trust AG Place: Regensburg, Bavaria, Germany Zip: 93047 Product: Germany-based investment company focused mainly on investing in...

  3. EBITSCHenergietechnik | Open Energy Information

    Open Energy Info (EERE)

    EBITSCHenergietechnik Jump to: navigation, search Name: EBITSCHenergietechnik Place: Germany Sector: Renewable Energy Product: Germany-based firm that offers tailor-made economic...

  4. Altus AG | Open Energy Information

    Open Energy Info (EERE)

    Altus AG Jump to: navigation, search Name: Altus AG Place: Germany Sector: Renewable Energy Product: Germany-based renewable energy project developer. References: Altus AG1 This...

  5. MaxxContact | Open Energy Information

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    Jump to: navigation, search Name: MaxxContact Place: Wolfen, Saxony-Anhalt, Germany Zip: 6766 Product: Germany-based cable and wire company. The firm also produces...

  6. Jura Energija | Open Energy Information

    Open Energy Info (EERE)

    Energija Jump to: navigation, search Name: Jura Energija Place: Germany Sector: Wind energy Product: German company active in developing wind farms in Germany, Croatia and Greece....

  7. Jacob GmbH Elektrotechnische Fabrik | Open Energy Information

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    Jump to: navigation, search Name: Jacob GmbH Elektrotechnische Fabrik Place: Kernen, Germany Zip: 71394 Product: Germany-based manufacturer of cable glands. The firm also...

  8. Stadtwerke Mainz AG | Open Energy Information

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    Mainz AG Jump to: navigation, search Name: Stadtwerke Mainz AG Place: Mainz, Germany Zip: 55118 Product: Utility in Mainz, Germany. References: Stadtwerke Mainz AG1 This article...

  9. Hochtief | Open Energy Information

    Open Energy Info (EERE)

    Hochtief Jump to: navigation, search Name: Hochtief Place: Essen, Germany Zip: 45128 Product: A global construction group based in Germany. Coordinates: 51.451805, 7.010625...

  10. BASF Linde Group JV | Open Energy Information

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    Linde Group JV Jump to: navigation, search Name: BASF & Linde Group JV Place: Germany Sector: Carbon Product: Germany-based carbon capture projects joint venture. References: BASF...

  11. Phoenix Contact Gmbh | Open Energy Information

    Open Energy Info (EERE)

    Jump to: navigation, search Name: Phoenix Contact Gmbh Place: Blomberg, Lower Saxony, Germany Zip: 32825 Product: Germany-based firm in electrical connection, interface and...

  12. Edinastur | Open Energy Information

    Open Energy Info (EERE)

    Edinastur Jump to: navigation, search Name: Edinastur Place: Germany Sector: Wind energy Product: Wind Farm developer in Germany. References: Edinastur1 This article is a stub....

  13. BIOHAUS PV Handels GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: BIOHAUS PV Handels GmbH Place: Paderborn, Germany Zip: 33100 Product: Distributor of Isofoton PV products in Germany. Coordinates:...

  14. SolarWorld AG | Open Energy Information

    Open Energy Info (EERE)

    SolarWorld AG Jump to: navigation, search Name: SolarWorld AG Place: Bonn, Germany Zip: 53113 Product: Vertically integrated PV manufacturer, with factories in Freiberg, Germany...

  15. Enbion | Open Energy Information

    Open Energy Info (EERE)

    Enbion Jump to: navigation, search Name: Enbion Place: Germany Sector: Solar Product: Germany-based biogas and solar project developer. References: Enbion1 This article is a...

  16. RWE Solutions | Open Energy Information

    Open Energy Info (EERE)

    RWE Solutions Place: Neu-Isenburg, Germany Zip: 63263 Sector: Solar Product: Germany-based, subsidiary of RWE AG plans, builds and manages energy infrastructure for utilities...

  17. Solea AG | Open Energy Information

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    AG Jump to: navigation, search Name: Solea AG Place: Plattling, Germany Zip: 94447 Product: A Germany PV project developer and building contractor, who also manufactures its own...

  18. Geysir Europe | Open Energy Information

    Open Energy Info (EERE)

    Geysir Europe Jump to: navigation, search Name: Geysir Europe Place: Germany Sector: Geothermal energy Product: Germany-based European subsidiary of Geysir Green Energy focusing on...

  19. ADAPT Elektronik GmbH | Open Energy Information

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    GmbH Jump to: navigation, search Name: ADAPT Elektronik GmbH Place: Grobheubach, Germany Zip: 63920 Sector: Solar Product: Germany-based manufacturer of electronic connector...

  20. Colexon Energy | Open Energy Information

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    Energy Jump to: navigation, search Name: Colexon Energy Place: Hamburg, Hamburg, Germany Zip: 20354 Sector: Solar, Wind energy Product: Germany-based PV system integrator and solar...

  1. AMB Apparate Maschinenbau GmbH | Open Energy Information

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    Jump to: navigation, search Name: AMB Apparate + Maschinenbau GmbH Place: Langweid, Germany Zip: 86462 Sector: Solar Product: Germany-based firm that offers automation...

  2. Energy Technology Centre | Open Energy Information

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    Centre Jump to: navigation, search Name: Energy Technology Centre Place: Nuremberg, Germany Zip: 90443 Sector: Solar Product: Germany-based incubator and research housing facility,...

  3. Verbio | Open Energy Information

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    Verbio Jump to: navigation, search Name: Verbio Place: Zrbig, Saxony-Anhalt, Germany Zip: 6780 Product: Germany-based producer and marketer of biodiesel and bioethanol....

  4. Schoeller Renewables | Open Energy Information

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    Schoeller Renewables Jump to: navigation, search Name: Schoeller Renewables Place: Germany Sector: Solar, Wind energy Product: Germany-based subsidiary of Schoeller Industries that...

  5. EDeMa (Smart Grid Project) | Open Energy Information

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    Jump to: navigation, search Project Name EDeMa Country Germany Headquarters Location Mlheim, Germany Coordinates 51.427074, 6.886492 Loading map... "minzoom":false,"mapping...

  6. Envisolar | Open Energy Information

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    Envisolar Jump to: navigation, search Name: Envisolar Place: Saxony-Anhalt, Germany Zip: D-82230 Weling Sector: Solar Product: Germany-based resource forecasting consultant,...

  7. Etelligence (Smart Grid Project) | Open Energy Information

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    (Smart Grid Project) Jump to: navigation, search Project Name Etelligence Country Germany Headquarters Location Oldenburg, Germany Coordinates 53.136719, 8.216536 Loading...

  8. ENRO Energie | Open Energy Information

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    Energie Jump to: navigation, search Name: ENRO Energie Place: Essen, Germany Zip: 45128 Sector: Geothermal energy Product: Germany-based company engaged in the design and...

  9. Maka Windkraft GmbH | Open Energy Information

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    Windkraft GmbH Jump to: navigation, search Name: Maka Windkraft GmbH Place: 33034, Germany Sector: Wind energy Product: Wind farm developer in Germany References: Maka...

  10. WALTER Konzept | Open Energy Information

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    WALTER Konzept Jump to: navigation, search Name: WALTER Konzept Place: Ellwangen, Germany Zip: 73479 Sector: Solar Product: Germany-based project management and architecture firm....

  11. DOE Announces Rescheduled Webinar on the Office of Energy Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    a follow up to the previous June 2013 workshop in Berlin, Germany. Participants included experts from Germany, Japan, the United States, Scandinavia, and the European Commission. ...

  12. Webinar March 10: 2nd International Hydrogen Infrastructure Challenges...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    up to the previous June 2013 workshop in Berlin, Germany. Participants included topical experts from Germany, Japan, the United States, Scandinavia, and the European Commission. ...

  13. Thermoelectric Activities of European Community within Framework...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and additional activities in Germany Thermoelectric Activities of European Community within Framework Programme 7 and additional activities in Germany Provides survey of basic and ...

  14. Overview of Fraunhofer IPM Activities in High Temperature Bulk...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fraunhofer IPM, new funding situation in Germany, high temperature material and modules, ... Programme 7 and additional activities in Germany Standardization of Transport Properties ...

  15. Experimental measurement of stress at a four-domain junction...

    Office of Scientific and Technical Information (OSTI)

    Petersenstrasse 23, D-64287 Darmstadt (Germany) (IKM), Universitaet Karlsruhe (Thailand), D-76131 Karlsruhe (Germany) Publication Date: 2005-05-01 OSTI Identifier: ...

  16. Concentrator Optics | Open Energy Information

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    Concentrator Optics Jump to: navigation, search Name: Concentrator Optics Place: Marburg, Germany Zip: 35037 Product: A Germany-based company engaged in the design and production...

  17. CH2 Contorhaus Hansestadt Hamburg | Open Energy Information

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    Germany Zip: 20457 Sector: Solar Product: Germany-based firm that sets up closed-end funds for investor-capital market products and projects, including solar. Coordinates:...

  18. PV Strom | Open Energy Information

    Open Energy Info (EERE)

    Place: Kirchheim, Germany Zip: 74366 Sector: Biomass, Hydro, Renewable Energy, Solar, Wind energy Product: Germany-based renewable energy project developer, focused mainly on...

  19. Buschel Connecting Systems GmbH BCS | Open Energy Information

    Open Energy Info (EERE)

    (BCS) Place: Jungingen, Baden-Wrttemberg, Germany Zip: 72417 Product: Germany-based firm developing, producing and selling electrical plug connecting systems. The firm also...

  20. PROKON Nord Energiesysteme GmbH | Open Energy Information

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    GmbH Place: Leer, Lower Saxony, Germany Zip: 26789 Sector: Biomass, Wind energy Product: Germany-based developer of wind and biomass energy power plants. Coordinates:...

  1. Schoenfeldt Kutzeer MDP GmbH | Open Energy Information

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    Schoenfeldt & Kutzeer (MDP) GmbH Place: Drohndorf, Germany Zip: D-06456 Sector: Wind energy Product: Germany-based, specialist in planning, project development and wind-powered...

  2. Vensys Energy AG formerly Vensys Energiesysteme GmbH | Open Energy...

    Open Energy Info (EERE)

    Vensys Energiesysteme GmbH ) Place: Saarbrcken, Germany Zip: 66115 Sector: Wind energy Product: Wind turbine manufacturer based in Germany. References: Vensys Energy...

  3. EUROSOL GmbH | Open Energy Information

    Open Energy Info (EERE)

    Germany Zip: 67065 Product: Germany-based engineering contractor and wholesaler of photovoltaic products, such as modules and additional components for PV systems. Coordinates:...

  4. Ingenta | Open Energy Information

    Open Energy Info (EERE)

    Germany Zip: D- 82319 Product: Germany-based clean energy developer with a photovoltaic power focus, preparing sustainable investments for institutional investors....

  5. SITIZN Group Holding AG | Open Energy Information

    Open Energy Info (EERE)

    SITIZN Group Holding AG Jump to: navigation, search Name: SITIZN Group Holding AG Place: Riederich, Germany Zip: 72585 Sector: Solar Product: Germany-based solar technology and...

  6. European Business Council for Sustainable Energy e5 | Open Energy...

    Open Energy Info (EERE)

    Council for Sustainable Energy e5 Jump to: navigation, search Name: European Business Council for Sustainable Energy (e5) Place: Karben, Germany Product: Germany-based, initiative...

  7. Fisia Babcock Environment GmbH | Open Energy Information

    Open Energy Info (EERE)

    Germany Zip: D-51643 Product: Germany-based engineering and construction firm of plants for thermal waste treatment and fuel gas cleaning plants. References: Fisia Babcock...

  8. Green GECCO | Open Energy Information

    Open Energy Info (EERE)

    GECCO Jump to: navigation, search Name: Green GECCO Place: Germany Sector: Renewable Energy Product: Germany-based joint venture to develop renewable energy projects. References:...

  9. ACI ecotec GmbH | Open Energy Information

    Open Energy Info (EERE)

    Thuringia, Germany Zip: 78658 Product: Germany-based PV equipment design and manufacturing company. Coordinates: 51.007519, 11.626786 Show Map Loading map......

  10. Centrotherm SiTec GmbH | Open Energy Information

    Open Energy Info (EERE)

    Germany Product: Germany-based subsidiary of Centrotherm. The unit provides turnkey manufacturing equipment for polysilicon factory. References: Centrotherm SiTec GmbH1 This...

  11. Eon Masdar Integrated Carbon | Open Energy Information

    Open Energy Info (EERE)

    Eon Masdar Integrated Carbon Jump to: navigation, search Name: Eon Masdar Integrated Carbon Place: Germany Sector: Carbon Product: Germany-based carbon emission projects developer....

  12. German Wind Energy Association | Open Energy Information

    Open Energy Info (EERE)

    German Wind Energy Association Place: Osnabrck, Germany Zip: 49074 Sector: Wind energy Product: Assocation for the promotion of wind energy in Germany. References: German Wind...

  13. Panel 1, Towards Sustainable Energy Systems: The Role of Large...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Germany May 14th, 2014 | Sacramento Political background for the transition to ... Three reasons why it is inevitable to change the energy system in Germany: Political ...

  14. GATE Global Alternative Energy Holding AG | Open Energy Information

    Open Energy Info (EERE)

    Energy Holding AG Place: Wrzburg, Bavaria, Germany Zip: 97080 Product: Germany-based biodiesel producer. References: GATE Global Alternative Energy Holding AG1 This article...

  15. Spontaneous Liver Rupture After Treatment With Drug-Eluting Beads...

    Office of Scientific and Technical Information (OSTI)

    University of Wuerzburg, Institute of Radiology (Germany) University of Wuerzburg, Institute of Pathology (Germany) University of Wuerzburg, Department of General, Visceral, ...

  16. GEE Energy GmbH Co KG | Open Energy Information

    Open Energy Info (EERE)

    Place: Hamburg, Germany Zip: 20459 Sector: Biomass Product: Biomass trader delivering wood pellets, wood and bark briquettes to Germany, Scandinavia, Austria, Italy and...

  17. Pegasus Energietechnik AG | Open Energy Information

    Open Energy Info (EERE)

    AG Place: Mhldorf am Inn, Germany Zip: 84453 Sector: Renewable Energy Product: Germany-based renewable energy developer assisting with projects in Europe. References:...

  18. European Energy Exchange AG EEX | Open Energy Information

    Open Energy Info (EERE)

    Energy Exchange AG EEX Jump to: navigation, search Name: European Energy Exchange AG (EEX) Place: Leipzig, Germany Zip: D-04109 Product: Germany's energy exchange, which aims to...

  19. Absolute radiant power measurement for the Au M lines of laser...

    Office of Scientific and Technical Information (OSTI)

    (Germany) Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany) Publication Date: 2014-01-15 OSTI Identifier: 22251206 Resource Type: Journal...

  20. Center for Energy Nanoscience at USC

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LEDs. image Hz field profile for a photonic crystal micro-cavity. Large polarization and piezoelectric fields present in InGaN GaN material structures present in typical...

  1. High Quality, Low Cost Bulk Gallium Nitride Substrates Grown...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of crystalline GaN growth in ESG Results and Accomplishments HRXRD vs reference SEM surface view 0 20 40 60 80 100 120 140 160 180 200 0 10 20 30 40 50 Deposition rate ...

  2. ARM - Feature Stories and Releases Article

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    throughout the campaign on Gan Island-part of the Adu Atoll in the Maldives. A few brand-new instruments at both island sites had early failures, and the remote locations...

  3. HIGH-QUALITY, LOW-COST BULK GALLIUM NITRIDE SUBSTRATES GROWN...

    Office of Environmental Management (EM)

    Efficient manufacturing of gallium nitride (GaN) could reduce the cost of and improve the output for light-emitting diodes, solid-state lighting, laser displays, and other power ...

  4. Search for: All records | DOE PAGES

    Office of Scientific and Technical Information (OSTI)

    Gan, Chee Lip (1) Schuh, Christopher A. (1) Tamura, Nobumichi (1) Zeng, Xiao Mei (1) Save Results Excel (limit 2000) CSV (limit 5000) XML (limit 5000) Have feedback or suggestions ...

  5. 2012 Publications | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Minary-jolandan M., Bernal R. A., Kuljanishvili I., Parpoil V. and Espinosa H. D., "Individual GaN Nanowires Exhibit Strong Piezoelectricity in 3D," Nano Letters, 12, 970-976 ...

  6. High-Quality, Low-Cost Bulk Gallium Nitride Substrates

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... useable in the production of solid-state lighting, high-brightness LEDs, and laser diodes. ... and developing fow models to optimize ion transport to the growth surface of the GaN seed. ...

  7. Microstructure changes and thermal conductivity reduction in...

    Office of Scientific and Technical Information (OSTI)

    Authors: Janne Pakrinen ; Marat Khafizov ; Lingfeng He ; Chris Wetland ; Jian Gan ; Andrew T. Nelson ; David H Hurley ; Anter El-Azab ; Todd R Allen Publication Date: 2014-11-01 ...

  8. Arizona Geological Society Digest 22

    National Nuclear Security Administration (NNSA)

    ... on active northeast-striking faults (e.g., Meremonte et al., 1995; Smith et al., 2001). ... 05-9, scale 1:24,000. Faulds, J.E., Smith, E.I., and Gans, P., 1999, Spatial and ...

  9. A High Temperature-Tolerant and Radiation-Resistant In-Core Neutron Sensor for Advanced Reactors. Final report

    SciTech Connect (OSTI)

    Cao, Lei; Miller, Don

    2015-01-23

    The objectives of this project are to develop a small and reliable gallium nitride (GaN) neutron sensor that is capable of withstanding high neutron fluence and high temperature, isolating gamma background, and operating in a wide dynamic range. The first objective will be the understanding of the fundamental materials properties and electronic response of a GaN semiconductor materials and device in an environment of high temperature and intense neutron field. To achieve such goal, an in-situ study of electronic properties of GaN device such as I-V, leakage current, and charge collection efficiency (CCE) in high temperature using an external neutron beam will be designed and implemented. We will also perform in-core irradiation of GaN up to the highest yet fast neutron fluence and an off-line performance evaluation.

  10. Jackson Megiatto | Center for Bio-Inspired Solar Fuel Production

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Barun Das Bhupesh Goyal Jackson Megiatto Lu Gan Matthieu Koepf Matthieu Walther Sandip Shinde Sudhanshu Sharma Jackson Megiatto Postdoctoral Fellow Subtask 4 project: "Design and Synthesis of Artificial Reaction Centers for Artificial Photoelectrochemical Devices"

  11. EERE PowerPoint 97-2004 Template: Green Version

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    tensors in fractured reservoirs using MEQ data. Proc. 49th US Symposium on Rock Mechanics and Geomechanics. San Francisco. June 29-July 1. 2. Gan, Q., Elsworth, D. (2015) A...

  12. ARM - Meetings and Presentations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB)...

  13. IGM CONSTRAINTS FROM THE SDSS-III/BOSS DR9 Lyα FOREST TRANSMISSION...

    Office of Scientific and Technical Information (OSTI)

    Authors: Lee, Khee-Gan ; Hennawi, Joseph F. 1 ; Spergel, David N. 2 ; Weinberg, David H. 3 ; Hogg, David W. 4 ; Viel, Matteo 5 ; Bolton, James S. 6 ; Bailey, Stephen ; ...

  14. fgr3372.tmp

    Office of Scientific and Technical Information (OSTI)

    ... of Science, Office of Basic Energy Science, Division of Materials Sciences of the ... GaN, a wide direct bandgap semiconductor, and its alloys with AIN and InN, have realized, ...

  15. Webinar October 21: Opportunities for Wide Bandgap Semiconductor...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    from the development of next-generation power electronics based on wide bandgap (WBG) semiconductor materials such as SiC and GaN. Examples include the development of reliable,...

  16. BIG RU N INDIANA LAKESHORE RUN E LUMBER CIT Y WARSAW JOHNST

    U.S. Energy Information Administration (EIA) Indexed Site

    ... DEADMAN CORN ER S GRU GAN NEBRASKA AR TEMAS MILL R UN DRIF TING TOBY CR EEK RUNVILLE MURRYSVILLE CAT FISH R UN HECKMAN HOLLOW KART HAUS WEST FIELD POT R IDGE PARSONSVILLE RED BRUSH ...

  17. Applied Materials Develops an Advanced Epitaxial Growth System to Bring Down LED Costs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Applied Materials has developed an advanced epitaxial growth system for gallium nitride (GaN) LED devices that decreases operating costs, increases internal quantum efficiency, and improves binning yields.

  18. Atomic Resolution in Situ Imaging of a Double-Bilayer Multistep Growth Mode in Gallium Nitride Nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Stach, E. A.

    2016-04-13

    We study the growth of GaN nanowires from liquid Au–Ga catalysts using environmental transmission electron microscopy. GaN wires grow in either (11¯20) or (11¯00) directions, by the addition of {11¯00} double bilayers via step flow with multiple steps. Step-train growth is not typically seen with liquid catalysts, and we suggest that it results from low step mobility related to the unusual double-height step structure. Finally, the results here illustrate the surprising dynamics of catalytic GaN wire growth at the nanoscale and highlight striking differences between the growth of GaN and other III–V semiconductor nanowires.

  19. Slide 1

    Energy Savers [EERE]

    High Temperature-tolerant and Radiation-resistant In- core Neutron Sensor for Advanced Reactors Lei R. Cao The Ohio State University Cao.152@osu.edu September 18, 2014 2 Project Overview  Goal and Objectives To develop a small and reliable gallium nitride (GaN) neutron sensor capable of withstanding high neutron fluences and high temperatures, while isolating gamma background. This project will provide an understanding of the fundamental material properties and electronic response of a GaN

  20. Summer 2010 Intern Project- John Haberstroh | Center for Energy Efficient

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials John Haberstroh THERMOELECTRIC PROPERTIES OF GaN AND InGaN BASED MATERIALS John Haberstroh CCS Physics UC Santa Barbara Mentor: Alex Sztein Faculty Advisor: Shuji Nakamura Department: Materials Science Recent advances in Metal Organic Chemical Vapor Deposition have made GaN and it's alloys a leading family of semiconductor materials. Despite this increased interest, however, the thermoelectric properties of this material system remain mostly unexplored, although a few basic studies

  1. ARM - Campaign Instrument - disdrometer

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentsdisdrometer Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : Impact Disdrometer (DISDROMETER) Instrument Categories Surface Meteorology Campaigns AMIE-Gan Ancillary Disdrometer [ Download Data ] Gan Island, Maldives; Mobile Facility, 2012.01.01 - 2012.02.10 CRYSTAL-FACE [ Download Data ] Off Site Campaign : various, including non-ARM sites, 2002.06.26 - 2002.08.01 Midlatitude Continental Convective Clouds

  2. ARM - Campaign Instrument - varanal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    govInstrumentsvaranal Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send Campaign Instrument : Constrained Variational Analysis (VARANAL) Instrument Categories Derived Quantities and Models Campaigns ARM MJO Investigation Experiment on Gan Island [ Download Data ] Gan Island, Maldives; Mobile Facility, 2011.10.01 - 2012.03.31 Cloud LAnd Surface Interaction Campaign (CLASIC) [ Download Data ] Southern Great Plains, 2007.06.01 - 2007.06.30 Fall 1997

  3. Publications, 2013 | MIT-Harvard Center for Excitonics

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 2013 Shiue, Ren-Jye; Gan, Xuetao; Gao, Y.; Li, L.; Yao, Xinwen; Szep, Attila; Walker Jr., Dennis; Hone, J.; and Englund, Dirk, " Enhanced photodetection in graphene-integrated photonic crystal cavity," Appl. Phys. Lett., 103, 241109 (2013). [DOI: 10.1063/1.4839235 Gan, Xuetao; Shiue, Ren-Jye; Gao, Yuanda; Meric, Inanc; Heinz, Tony F.; Shepard, Kenneth L.; Hone, James; Assefa, Solomon; and Englund, Dirk,"Chip-integrated ultrafast graphene photodetector with high

  4. ARM - Data Announcements Article

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4, 2013 [Data Announcements] Additional Data Added to Aerosol Optical Depth Product Bookmark and Share AOD at five wavelengths (top) and Angstrom exponent (bottom) at the Gan Island site on November 5, 2011. AOD at five wavelengths (top) and Angstrom exponent (bottom) at the Gan Island site on November 5, 2011. Aerosol optical depth (AOD) measures total aerosol burden in the atmosphere. The spectral dependence of AOD, typically described by the Angstrom exponent, is also an indicator of particle

  5. Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

    DOE Patents [OSTI]

    Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

    2013-09-24

    The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

  6. Ocean Carbon Cycle Models from the Carbon Dioxide Information Analysis Center (CDIAC)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    \tPacific data-model intercomparison from Patrick Wetzel (Max Planck Institute for Meteorology, Germany)

  7. The Diesel Engine Powering Light-Duty Vehicles: Today and Tomorrow

    Broader source: Energy.gov [DOE]

    2004 Diesel Engine Emissions Reduction (DEER) Conference Presentation: Volkwagen AG, Wolfsburg, Germany

  8. FBIS report. Science and technology: Europe/international, November 3, 1995

    SciTech Connect (OSTI)

    1995-11-03

    ;Partial Contents: Netherlands: Program Gives Priority to Materials Research; Germany: Minister Ruettgers Outlines Biotechnology R&D Priorities; Germany: Structure of Defense-Related R&D Detailed; Germany: New Designs in Fiber Lasers Explored; France: CEA Carries Out Research on Cold Fusion; Germany: Research Society`s R&D Programs for 1996 Summarized; and EU Council Adopts Advanced Television Services Action Plan.

  9. (Tenth symposium on microdosimetry, Rome, Italy; Department of Energy/Commission of European Communities workshop, Rome, Italy; and visit to Neuherberg, W. Germany, May 21--June 3, 1989): Foreign trip report

    SciTech Connect (OSTI)

    Wright, H.A.

    1989-06-15

    Report of Harvel A. Wright, to participate in the Tenth Symposium on Microdosimetry in Rome, Italy, May 21-26, 1989; to participate in a Department of Energy/Commission of European Communities (DOE/CEC) Workshop on Long-Term Research Needs and Priorities in Microdosimetry, held in Rome following the microdosimetry symposium; and to visit the Gesellschaft fur Strahlen- and Umweltforschung (GSF) in Neuherberg, FRG, to carry out collaborative research with Dr. H.G. Paretzke.

  10. Search for: All records | DOE Patents

    Office of Scientific and Technical Information (OSTI)

    Rosner, Bettina M (1) Rosner, Bettina M. (1) Spormann, Alfred M (1) Spormann, Alfred M. (1) Save Results Excel (limit 2000) CSV (limit 5000) XML (limit 5000) Have feedback or ...

  11. ARM - Datastreams - tsiskyimage

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    PVC M1 Browse Data Highland Center, Cape Cod MA; AMF1 retired PYE M1 Browse Data Point Reyes, CA retired SBS M1 Browse Data Steamboat Springs CO, Valley Site; AMF2 retired TMP M1...

  12. Compact, Interactive Electric Vehicle Charger: Gallium-Nitride Switch Technology for Bi-directional Battery-to-Grid Charger Applications

    SciTech Connect (OSTI)

    2010-10-01

    ADEPT Project: HRL Laboratories is using gallium nitride (GaN) semiconductors to create battery chargers for electric vehicles (EVs) that are more compact and efficient than traditional EV chargers. Reducing the size and weight of the battery charger is important because it would help improve the overall performance of the EV. GaN semiconductors process electricity faster than the silicon semiconductors used in most conventional EV battery chargers. These high-speed semiconductors can be paired with lighter-weight electrical circuit components, which helps decrease the overall weight of the EV battery charger. HRL Laboratories is combining the performance advantages of GaN semiconductors with an innovative, interactive battery-to-grid energy distribution design. This design would support 2-way power flow, enabling EV battery chargers to not only draw energy from the power grid, but also store and feed energy back into it.

  13. Self-annihilation of inversion domains by high energy defects in III-Nitrides

    SciTech Connect (OSTI)

    Koukoula, T.; Kioseoglou, J. Kehagias, Th.; Komninou, Ph.; Ajagunna, A. O.; Georgakilas, A.

    2014-04-07

    Low-defect density InN films were grown on Si(111) by molecular beam epitaxy over an ?1??m thick GaN/AlN buffer/nucleation layer. Electron microscopy observations revealed the presence of inverse polarity domains propagating across the GaN layer and terminating at the sharp GaN/InN (0001{sup }) interface, whereas no inversion domains were detected in InN. The systematic annihilation of GaN inversion domains at the GaN/InN interface is explained in terms of indium incorporation on the Ga-terminated inversion domains forming a metal bonded In-Ga bilayer, a structural instability known as the basal inversion domain boundary, during the initial stages of InN growth on GaN.

  14. Multi-phonon-assisted absorption and emission in semiconductors and its potential for laser refrigeration

    SciTech Connect (OSTI)

    Khurgin, Jacob B.

    2014-06-02

    Laser cooling of semiconductors has been an elusive goal for many years, and while attempts to cool the narrow gap semiconductors such as GaAs are yet to succeed, recently, net cooling has been attained in a wider gap CdS. This raises the question of whether wider gap semiconductors with higher phonon energies and stronger electron-phonon coupling are better suitable for laser cooling. In this work, we develop a straightforward theory of phonon-assisted absorption and photoluminescence of semiconductors that involves more than one phonon and use to examine wide gap materials, such as GaN and CdS and compare them with GaAs. The results indicate that while strong electron-phonon coupling in both GaN and CdS definitely improves the prospects of laser cooling, large phonon energy in GaN may be a limitation, which makes CdS a better prospect for laser cooling.

  15. Growth of gallium nitride films via the innovative technique of atomic-layer epitaxy. Annual progress report, 1 June 1987-31 May 1988

    SciTech Connect (OSTI)

    Davis, R.F.; Paisley, M.J.; Sitar, Z.

    1988-06-01

    Gallium nitride (GaN) is a wide-bandgap (3.45 eV at 300K) III-V compound semiconductor. The large direct bandgap and high electron-drift velocity of GaN are important properties in the performance of short-wavelength optical devices and high-power microwave devices. Immediate applications that would be greatly enhanced by the availability of GaN and/or Al/sub x/Ga/sub 1-x/N devices include threat warning systems (based on the ultraviolet (UV) emission from the exhaust plumes of missiles) and radar systems (which require high-power microwave generation). Important future applications for devices produced from these materials include blue and ultraviolet semiconductor lasers, blue-light-emitting diodes (LEDs) and high temperature electronic devices. This report discusses this material.

  16. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Mreke, Janina Uren, Michael J.; Kuball, Martin; Novikov, Sergei V.; Foxon, C. Thomas; Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J.; Haigh, Sarah J.; Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain

    2014-07-07

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  17. Vis Nova Trading GmbH | Open Energy Information

    Open Energy Info (EERE)

    Nova Trading GmbH Jump to: navigation, search Name: Vis Nova Trading GmbH Place: Bremen, Germany Zip: 28217 Product: Germany-based producer and trader of wood pellets....

  18. Mario Wriedt | Center for Gas SeparationsRelevant to Clean Energy...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    mwriedt at clarkson.edu Diploma in Chemistry, Christan-Albrechts-University in Kiel, Germany PhD in Inorganic Chemistry, Christan-Albrechts-University in Kiel, Germany EFRC...

  19. Eolic Power GmbH | Open Energy Information

    Open Energy Info (EERE)

    Eolic Power GmbH Jump to: navigation, search Name: Eolic Power GmbH Place: Bremen, Germany Zip: 28195 Sector: Wind energy Product: Germany-based company that is developing the...

  20. Plain Energy GmbH | Open Energy Information

    Open Energy Info (EERE)

    Energy GmbH Jump to: navigation, search Name: Plain Energy GmbH Place: Munchen, Germany Zip: D-81675 Sector: Renewable Energy Product: Germany-based renewable energy investment...

  1. Dear Family and friends,

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and environmental engineering. He holds a B.S. in geology from Muenster University in Germany and an M.S. in geology from the Technical University of Berlin, Germany. He edited...

  2. Energy Competence Centre GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Energy Competence Centre GmbH Place: Berlin, Germany Zip: 10709 Sector: Wind energy Product: Germany-based wind project developer with...

  3. Ostwind technic GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Ostwind technic GmbH Place: Regensburg, Germany Zip: 4703 Sector: Wind energy Product: Based in Bockelwitz, Germany. Owns and operates wind...

  4. Enbion GmbH | Open Energy Information

    Open Energy Info (EERE)

    Enbion GmbH Jump to: navigation, search Name: Enbion GmbH Place: Lneburg, Germany Zip: 21335 Sector: Solar Product: Germany-based biogas and solar project developer....

  5. Consulting Kontor GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Consulting Kontor GmbH Place: Hamburg, Hamburg, Germany Zip: D-20457 Sector: Wind energy Product: Small Germany based firm doing consultancy...

  6. Evonik New Energies GmbH | Open Energy Information

    Open Energy Info (EERE)

    Energies GmbH Jump to: navigation, search Name: Evonik New Energies GmbH Place: Germany Product: Evonik New Energies is positioned Germany-wide as a specialist in the field of...

  7. Anton Gensler GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Anton Gensler GmbH Place: Steinbach-Hallenberg, Germany Zip: D-98587 Product: Germany-based manufacturer of electrical cables and connectors....

  8. RWE Metering GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: RWE Metering GmbH Place: Germany Product: Smart metering subsidiary of Germany's second largest utility RWE AG. References: RWE Metering...

  9. PN Rotor GmbH | Open Energy Information

    Open Energy Info (EERE)

    PN Rotor GmbH Jump to: navigation, search Name: PN Rotor GmbH Place: Lower Saxony, Germany Sector: Wind energy Product: Germany-based subsidiary of Prokon Nord Energiesysteme GmbH...

  10. Cuculus GmbH | Open Energy Information

    Open Energy Info (EERE)

    Cuculus GmbH Jump to: navigation, search Name: Cuculus GmbH Place: Ilmenau, Germany Zip: 98693 Product: Germany-based developer of smart metering and home control systems....

  11. ALSTOM Ballard GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: ALSTOM Ballard GmbH Place: Mannheim, Hessen, Germany Zip: D-68309 Product: Germany-based, JV of ALSTOM and Ballard Generation Systems...

  12. Wirfus Windfarm GmbH | Open Energy Information

    Open Energy Info (EERE)

    Wirfus Windfarm GmbH Jump to: navigation, search Name: Wirfus Windfarm GmbH Place: Germany Sector: Wind energy Product: SPV for Wirfus Wind Farm in Germany. References: Wirfus...

  13. CTS Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    CTS Solar GmbH Jump to: navigation, search Name: CTS-Solar GmbH Place: Germany Product: Germany-based project developer provides service of installation of roof-top and...

  14. BMP Biomasse Projekt GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: BMP Biomasse Projekt GmbH Place: Radolfzell, Germany Zip: 78315 Sector: Biomass Product: Germany-based biomass project developer and...

  15. Galip Solar GmbH | Open Energy Information

    Open Energy Info (EERE)

    Galip Solar GmbH Jump to: navigation, search Name: Galip Solar GmbH Place: Germany Sector: Services, Solar Product: Germany-based solar project developer, offering end user...

  16. Solibro GmbH | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Solibro GmbH Place: Bitterfeld-Wolfen, Saxony-Anhalt, Germany Zip: 6766 Product: Germany-based JV between Q-Cells and Solibro to commercialise...

  17. AVG Koeln GmbH | Open Energy Information

    Open Energy Info (EERE)

    AVG Koeln GmbH Jump to: navigation, search Name: AVG Koeln GmbH Place: Kln, Germany Zip: 50735 Product: Operating a Waste-to-Energy facility in Kln, Germany. References:...

  18. InnoVent InfraVest GmbH | Open Energy Information

    Open Energy Info (EERE)

    InfraVest GmbH Jump to: navigation, search Name: InnoVentInfraVest GmbH Place: Varel, Germany Zip: 26316 Sector: Wind energy Product: Wind farm project developer based in Germany....

  19. DeWind GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: DeWind GmbH Place: Lubeck, Germany Zip: D - 23569 Sector: Wind energy Product: Germany-based large scale wind turbine manufacturer....

  20. SE Drive Technik | Open Energy Information

    Open Energy Info (EERE)

    Drive Technik Jump to: navigation, search Name: SE Drive Technik Place: Bochum, Germany Zip: 44791 Product: Germany-based R&D subsidiary of Indian turbine maker Suzlon. References:...

  1. Alu Teck | Open Energy Information

    Open Energy Info (EERE)

    Alu Teck Jump to: navigation, search Name: Alu-Teck Place: Korbach, Germany Zip: D-34497 Product: Germany-based provider of PV systems. Coordinates: 51.274228, 8.875418 Show...

  2. DEIG GmbH | Open Energy Information

    Open Energy Info (EERE)

    DEIG GmbH Jump to: navigation, search Name: DEIG GmbH Place: Berlin, Germany Zip: 12489 Sector: Renewable Energy Product: Based in Berlin, Germany DEIG is a partnership of...

  3. Gunther Spelsberg GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Gunther Spelsberg GmbH Place: Schalksmhle, Germany Zip: D-58579 Product: Germany-based manufacturer of electronic connectors and cables....

  4. Sykonec GmbH | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: Sykonec GmbH Place: NeustadtCoburg, Baden-Wrttemberg, Germany Zip: 96465 Sector: Solar Product: Germany-based manufacturer of ready-to-install...

  5. Geo X GmbH | Open Energy Information

    Open Energy Info (EERE)

    X GmbH Jump to: navigation, search Name: Geo X GmbH Place: Landau, Germany Zip: 76829 Sector: Geothermal energy Product: Germany-based geothermal project developer. Coordinates:...

  6. ConInvest GmbH | Open Energy Information

    Open Energy Info (EERE)

    ConInvest GmbH Jump to: navigation, search Name: ConInvest GmbH Place: Berlin, Berlin, Germany Zip: 10787 Product: The company is mainly investing in biogas projects in Germany....

  7. Perspectives GmbH | Open Energy Information

    Open Energy Info (EERE)

    Perspectives GmbH Jump to: navigation, search Name: Perspectives GmbH Place: Hamburg, Germany Zip: 22045 Product: Germany-based consultancy focusing on CDMJI projects as well as...

  8. AVANCIS GmbH Co KG | Open Energy Information

    Open Energy Info (EERE)

    GmbH Co KG Jump to: navigation, search Name: AVANCIS GmbH & Co KG Place: Torgau, Germany Product: Germany-based CIS PV cell manufacturer and subsidiary of Saint Gobain....

  9. Umwelt Windrad GmbH Co KG UWR | Open Energy Information

    Open Energy Info (EERE)

    UWR Jump to: navigation, search Name: Umwelt Windrad GmbH & Co KG (UWR) Place: Rheine, Germany Zip: 48431 Sector: Wind energy Product: Germany-based, subsidiary of Novera Energy...

  10. Payom Solar AG | Open Energy Information

    Open Energy Info (EERE)

    Payom Solar AG Jump to: navigation, search Name: Payom Solar AG Place: Merkendorf, Germany Zip: 91732 Product: Germany-based installer of roof-mounted PV plants, which also trades...

  11. Ecosenergy GmbH JV | Open Energy Information

    Open Energy Info (EERE)

    Ecosenergy GmbH JV Jump to: navigation, search Name: Ecosenergy GmbH JV Place: Germany Sector: Solar Product: Germany-based Joint venture to develop solar PV projects. References:...

  12. NaWoTec | Open Energy Information

    Open Energy Info (EERE)

    NaWoTec Jump to: navigation, search Name: NaWoTec Place: Rossdorf, Germany Zip: 64380 Product: Germany-based company developing 3-dimensional additive lithography using...

  13. Plambeck Norderland GmbH | Open Energy Information

    Open Energy Info (EERE)

    Norderland GmbH Jump to: navigation, search Name: Plambeck Norderland GmbH Place: Germany Sector: Wind energy Product: Germany-based firm focused on the acquisition and execution...

  14. Sontor GmbH | Open Energy Information

    Open Energy Info (EERE)

    Sontor GmbH Jump to: navigation, search Name: Sontor GmbH Place: Saxony-Anhalt, Germany Zip: 6766 Product: Germany-based provider of silicon tandem thin film technology, merged...

  15. Santon GmbH | Open Energy Information

    Open Energy Info (EERE)

    Santon GmbH Jump to: navigation, search Name: Santon GmbH Place: Nettetal, Germany Sector: Solar Product: Germany-based division focused on switch technology and electro-mechanical...

  16. BayWa Group | Open Energy Information

    Open Energy Info (EERE)

    BayWa Group Jump to: navigation, search Name: BayWa Group Place: Munich, Germany Zip: 81925 Sector: Services, Solar Product: Germany-based company with international operations...

  17. Alpensolar Einkauf GmbH | Open Energy Information

    Open Energy Info (EERE)

    GmbH Jump to: navigation, search Name: Alpensolar Einkauf GmbH Place: Dietmannsried, Germany Zip: 87463 Sector: Solar Product: Germany-based supplier of solar components and PV...

  18. Aqua Society GmbH | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Aqua Society GmbH Place: Herten, North Rhine-Westphalia, Germany Zip: 45699 Product: Germany-based, waste heat to energy technology designer and...

  19. Volthaus GmbH | Open Energy Information

    Open Energy Info (EERE)

    Volthaus GmbH Jump to: navigation, search Name: Volthaus GmbH Place: Germany Product: Germany-based PV project developer References: Volthaus GmbH1 This article is a stub. You...

  20. MAN Ferrostaal AG | Open Energy Information

    Open Energy Info (EERE)

    AG Jump to: navigation, search Name: MAN Ferrostaal AG Place: Essen, Germany Zip: 45128 Sector: Solar Product: Germany-based firm that focuses on the development and realisation of...

  1. Solar Energy Trading GmbH SET | Open Energy Information

    Open Energy Info (EERE)

    GmbH SET Jump to: navigation, search Name: Solar Energy Trading GmbH (SET) Place: Mnster, Germany Zip: 48157 Sector: Solar Product: Germany-based solar project developer and...

  2. Solar Kabel GmbH | Open Energy Information

    Open Energy Info (EERE)

    Kabel GmbH Jump to: navigation, search Name: Solar-Kabel GmbH Place: Germany Sector: Solar Product: Germany-based solar PV cable manufacturer. References: Solar-Kabel GmbH1 This...

  3. Bosch Solar Energy AG former ErSol Solar Energy AG | Open Energy...

    Open Energy Info (EERE)

    AG former ErSol Solar Energy AG Jump to: navigation, search Name: Bosch Solar Energy AG (former ErSol Solar Energy AG) Place: Erfurt, Germany Zip: D-99099 Product: Germany-based...

  4. LQ Energy LDK Solar Q Cells JV | Open Energy Information

    Open Energy Info (EERE)

    LQ Energy LDK Solar Q Cells JV Jump to: navigation, search Name: LQ Energy (LDK Solar & Q-Cells JV) Place: Saxony-Anhalt, Germany Sector: Solar Product: Germany-based JV between...

  5. SGL Rotec GmbH Co KG | Open Energy Information

    Open Energy Info (EERE)

    SGL Rotec GmbH & Co KG Place: Lemwerder, Hamburg, Germany Zip: 27809 Sector: Wind energy Product: Germany-based manufacturer of rotor blades for wind turbines. References: SGL...

  6. Windkraft Luhrs GmbH Co KG | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Windkraft Luhrs GmbH & Co KG Place: Germany Sector: Wind energy Product: Germany-based, wind farm developer. References: Windkraft Luhrs GmbH & Co...

  7. Pfleiderer Wind Energy GmbH | Open Energy Information

    Open Energy Info (EERE)

    Pfleiderer Wind Energy GmbH Jump to: navigation, search Name: Pfleiderer Wind Energy GmbH Place: Germany Zip: 92318 Product: Germany-based, subsidiary of Pfleiderer whose...

  8. Draka Industrial Cable GmbH | Open Energy Information

    Open Energy Info (EERE)

    Draka Industrial Cable GmbH Jump to: navigation, search Name: Draka Industrial Cable GmbH Place: Wuppertal, North Rhine-Westphalia, Germany Zip: 42369 Product: Germany-based...

  9. Photovoltaic Experts GmbH | Open Energy Information

    Open Energy Info (EERE)

    Experts GmbH Jump to: navigation, search Name: Photovoltaic Experts GmbH Place: Germany Sector: Services, Solar Product: Germany-based company provides all services and products...

  10. SES 21 AG | Open Energy Information

    Open Energy Info (EERE)

    Place: OderdingPolling, Germany Zip: 82398 Sector: Solar Product: A distributor of photovoltaic and solar thermal systems in Germany. References: SES 21 AG1 This article is a...

  11. Masdar PV GmbH | Open Energy Information

    Open Energy Info (EERE)

    Masdar PV GmbH Place: Germany Product: Germany-based manufacturer of thin film photovoltaic products and solutions References: Masdar PV GmbH1 This article is a stub. You...

  12. YellTec GmbH | Open Energy Information

    Open Energy Info (EERE)

    YellTec GmbH Jump to: navigation, search Name: YellTec GmbH Place: Germany Sector: Biofuels Product: YellTec is a biofuels distribution company, based in Germany. References:...

  13. PV Eiwa Systemtechnik GmbH Co KG | Open Energy Information

    Open Energy Info (EERE)

    Germany Zip: 94447 Product: Germany-based manufacturer of fixed mounting systems and single-axis tracking for PV modules. Coordinates: 48.778312, 12.871223 Show Map...

  14. A S NaturEnergie GmbH | Open Energy Information

    Open Energy Info (EERE)

    S NaturEnergie GmbH Jump to: navigation, search Name: A + S NaturEnergie GmbH Place: Pfaffenhofen, Germany Zip: 74397 Sector: Biomass Product: Germany-based producer of solid...

  15. ETBKN GmbH Co KG | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: ETBKN GmbH & Co KG Place: Germany Product: Germany-based biogas project developer. References: ETBKN GmbH & Co KG1 This article is a stub. You can...

  16. WEB Windenergie GmbH | Open Energy Information

    Open Energy Info (EERE)

    WEB Windenergie GmbH Jump to: navigation, search Name: WEB Windenergie GmbH Place: Germany Sector: Wind energy Product: Germany-based wind farm developer, charged with...

  17. SGL Carbon AG | Open Energy Information

    Open Energy Info (EERE)

    Carbon AG Jump to: navigation, search Name: SGL Carbon AG Place: Wiesbaden, Hessen, Germany Zip: 65203 Sector: Carbon Product: A Germany-based manufacturer of carbon-based products...

  18. ARM - AMF Architecture

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2009-2010 Shouxian, China, 2008 Black Forest, Germany, 2007 Niamey, Niger, 2006 Point Reyes, California, 2005 AMF Architecture The AMF1 sets up in Heselbach, Germany The AMF1...

  19. Developments in European Thermal Energy Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to share with you my observations on the ever-changing energy scene in Germany and Europe, and how that impacts technologies my team is developing. Germany550x300-500x272 In...

  20. Proton Power Systems Plc | Open Energy Information

    Open Energy Info (EERE)

    Power Systems Plc Place: Starnberg, Bavaria, Germany Zip: D-82319 Sector: Hydro, Hydrogen Product: UK-based parent company of Proton Motor GmbH, which operates in Germany. The...

  1. Novel Solid State Magnetocaloric Air Conditioner

    Broader source: Energy.gov [DOE]

    Lead Performer: Oak Ridge National Laboratory, Oak Ridge, TN Partners: Vaccumschmelze GmbH & Co. KG., Hanau, Germany

  2. Microsoft PowerPoint - 3_Gary and Brian_Wednesday 5-22 Transit...

    National Nuclear Security Administration (NNSA)

    France Germany Italy Japan Kazakhstan Mexico Netherlands China Russia Spain United Kingdom Sweden 5 Natural Uranium Imports ...

  3. Scientific Alternative Investment Advisory Partners | Open Energy...

    Open Energy Info (EERE)

    Alternative Investment Advisory Partners Jump to: navigation, search Name: Scientific Alternative Investment Advisory Partners Place: Frankfurt, Germany Zip: 60325 Sector:...

  4. Slide 1

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in reducing environments Opportunities for international collaboration France, Germany, Sweden, Switzerland, Korea, Japan, China, Czech Republic, Canada, Finland, UK ......

  5. 97fall.pgm

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Challenges in Its Nuclear Future 9 Recent ... Belgium, Canada, France, Germany, Japan, ... of actinides from civilian nuclear power generation. ...

  6. Scheuco International | Open Energy Information

    Open Energy Info (EERE)

    Name: Scheuco International Place: Bielefeld, Germany Zip: 33609 Sector: Solar Product: Building envelope specialist (facade construction), including solar products. References:...

  7. Ocean Carbon Cycle Models from the Carbon Dioxide Information Analysis Center (CDIAC)

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    •\tPacific data-model intercomparison from Patrick Wetzel (Max Planck Institute for Meteorology, Germany)

  8. Aachen University of Applied Sciences | Open Energy Information

    Open Energy Info (EERE)

    Aachen University of Applied Sciences Place: Germany Sector: Services Product: General Financial & Legal Services ( Academic Research foundation ) References: Aachen...

  9. Technologiefabrik Karlsruhe GmbH | Open Energy Information

    Open Energy Info (EERE)

    Name: Technologiefabrik Karlsruhe GmbH Place: Germany Sector: Services Product: General Financial & Legal Services ( Government Public sector ) References: Technologiefabrik...

  10. TFU TechnologieFoerderungsunternehmen | Open Energy Information

    Open Energy Info (EERE)

    TFU-TechnologieFoerderungsunternehmen Place: Germany Sector: Services Product: General Financial & Legal Services ( Academic Research foundation ) References:...

  11. Carver County, Minnesota: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    Cologne, Minnesota Hamburg, Minnesota Mayer, Minnesota New Germany, Minnesota Norwood Young America, Minnesota Victoria, Minnesota Waconia, Minnesota Watertown, Minnesota...

  12. Siemens Technology Accelerator | Open Energy Information

    Open Energy Info (EERE)

    Technology Accelerator Jump to: navigation, search Name: Siemens Technology Accelerator Place: Germany Sector: Services Product: General Financial & Legal Services ( Subsidiary ...

  13. Windpark Bockelwitz Verwaltungsgesellschaft | Open Energy Information

    Open Energy Info (EERE)

    Bockelwitz Verwaltungsgesellschaft Place: Germany Sector: Wind energy Product: German wind farm developer. References: Windpark Bockelwitz Verwaltungsgesellschaft1 This...

  14. Solid-State Lighting | Center for Energy Efficient Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solid-State Lighting Our goal is to advance the fundamental science and technology to both understand factors that limit efficiencies for light emitting diode-based lighting and to provide innovative and viable solutions to current roadblocks. We intend to achieve these goals by: (1) control and elucidation of the carrier loss mechanisms on nonpolar/semipolar GaN LEDs; (2) growth of defect-free bulk GaN crystals; and (3) full-spectrum lighting using an all semiconductor-based emission region;

  15. Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

    DOE Patents [OSTI]

    Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

    2014-10-21

    Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

  16. Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping

    SciTech Connect (OSTI)

    Hille, P. Mener, J.; Becker, P.; Teubert, J.; Schrmann, J.; Eickhoff, M.; Mata, M. de la; Rosemann, N.; Chatterjee, S.; Magn, C.; Arbiol, J.; Institucio Catalana de Recerca i Estudis Avanats , 08010 Barcelona, CAT

    2014-03-10

    We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10{sup 20}?cm{sup 3} shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed.

  17. ARM - ARM MJO Investigation Experiment (AMIE)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island Site (PDF, 2.0 MB)

  18. ARM - Steering Committee

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Steering Committee Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island

  19. ARM MJO Investigation Experiment on

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 ARM MJO Investigation Experiment on Gan Island (AMIE-Gan) Science Plan October 2011-March 2012 C Long Principal Investigator A Del Genio P May M Deng S McFarlane X Fu P Minnis W Gustafson C Schumacher R Houze A Vogelmann C Jakob Y Wang M Jensen P Webster R Johnson S Xie X Liu C Zhang E Luke April 2011 DISCLAIMER This report was prepared as an account of work sponsored by the U.S. Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty,

  20. ARM - AMIE Manus - Data Plots

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Manus Related Links amie.png 34h AMIE Home cindy.png 50h CINDY2011 dynamo.png 34h DYNAMO ARM Data Discovery Browse Data Outreach News & Press Blog Backgrounder (PDF, 1.2MB) Education Flyer (PDF, 2.0MB) Images ARM flickr site Official AMIE Logo AMIE Gear Experiment Planning Steering Committee AMIE-MANUS Proposal Abstract AMIE-GAN Proposal Abstract Meetings Cloud Life Cycle Working Group Deployment Operations Science Plan - TWP Manus Site (PDF, 2.1 MB) Science Plan - Gan Island Site (PDF, 2.0

  1. Fbis report. Science and technology: Economic review, September 19, 1995

    SciTech Connect (OSTI)

    1995-09-19

    ;Partial Contents: Germany: Braunschweig University Tests Organic Semiconductors; France: Ariane-5 Tests Suspended; First Tests in Euro-Russian RECORD Rocket Engine Program; France: Renault`s Multi-Model Assembly Line Presented; Germany: New High Speed Trains Under Development; France: Matra Test Drone, Missile Systems; France: Experimental Project for Automobile Recycling; Germany: Survey of Flexible Manufacturing Developments; Germany: Heinrich Hertz Institute Produces Polymer-Based Circuit; French Firms Introduce Computerized Control Room for Nuclear Plants; German Machine Tool Industry Calls for Information Technology Projects; Germany: R&D Achievements in Digital HDTV Reported; Hungary: Secondary Telecommunications Networks Described; EU: Mergers in Pharmaceutical Industry Reported; SGS-Thomson Business Performance Analyzed; Germany`s Siemens Invest Heavily in UK Semiconductor Plant.

  2. Sandip Shinde | Center for Bio-Inspired Solar Fuel Production

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Principal Investigators Postdoctoral Fellows Center researchers Graduate Students Undergraduate Students All Bisfuel Center Personnel Barun Das Bhupesh Goyal Jackson Megiatto Lu Gan Matthieu Koepf Matthieu Walther Sandip Shinde Sudhanshu Sharma Sandip Shinde Postdoctoral Fellow (2010-2011) Subtask 1 * Subtask 2 * Subtask 3 * Subtask 4 * Subtask 5

  3. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect (OSTI)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi

    2014-10-15

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  4. Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, Chao; Cai, Yuefei; Liu, Zhaojun; Ma, Jun; Lau, Kei May

    2015-05-04

    We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrown n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.

  5. Multicolor, High Efficiency, Nanotextured LEDs

    SciTech Connect (OSTI)

    Jung Han; Arto Nurmikko

    2011-09-30

    We report on research results in this project which synergize advanced material science approaches with fundamental optical physics concepts pertaining to light-matter interaction, with the goal of solving seminal problems for the development of very high performance light emitting diodes (LEDs) in the blue and green for Solid State Lighting applications. Accomplishments in the duration of the contract period include (i) heteroepitaxy of nitrogen-polar LEDs on sapphire, (ii) heteroepitaxy of semipolar (11{bar 2}2) green LEDs on sapphire, (iii) synthesis of quantum-dot loaded nanoporous GaN that emits white light without phosphor conversion, (iv) demonstration of the highest quality semipolar (11{bar 2}2) GaN on sapphire using orientation-controlled epitaxy, (v) synthesis of nanoscale GaN and InGaN medium, and (vi) development of a novel liftoff process for manufacturing GaN thin-film vertical LEDs. The body of results is presented in this report shows how a solid foundation has been laid, with several noticeable accomplishments, for innovative research, consistent with the stated milestones.

  6. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    SciTech Connect (OSTI)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN core of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.

  7. Barun Das | Center for Bio-Inspired Solar Fuel Production

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Principal Investigators Postdoctoral Fellows Center researchers Graduate Students Undergraduate Students All Bisfuel Center Personnel Barun Das Bhupesh Goyal Jackson Megiatto Lu Gan Matthieu Koepf Matthieu Walther Sandip Shinde Sudhanshu Sharma Barun Das Postdoctoral Fellow Subtask 5 project: "Synthesis of Porous p-Type Transparent Conducting Oxide CuAlO2" Subtask 1 * Subtask 2 * Subtask 3 * Subtask 4 * Subtask 5

  8. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, J.C.; Shul, R.J.

    1999-02-02

    An ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same are disclosed. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorus co-implantation, in selected III-V semiconductor materials. 19 figs.

  9. Gallium nitride junction field-effect transistor

    DOE Patents [OSTI]

    Zolper, John C.; Shul, Randy J.

    1999-01-01

    An all-ion implanted gallium-nitride (GaN) junction field-effect transistor (JFET) and method of making the same. Also disclosed are various ion implants, both n- and p-type, together with or without phosphorous co-implantation, in selected III-V semiconductor materials.

  10. CX-009000: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    "High Quality, Low Cost Bulk Gallium Nitride (GaN) Substrates Grown by the Electrochemical Solution Growth Method CX(s) Applied: A9, B3.6 Date: 08/20/2012 Location(s): Missouri Offices(s): Golden Field Office"

  11. CX-010974: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

  12. CX-010973: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon Carbide (SiC) and Gallium Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 09/16/2013 Location(s): Arkansas Offices(s): National Energy Technology Laboratory

  13. CX-000845: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    25A2445 - Ammonothermal Bulk Gallium Nitride (GaN) Crystal Growth for Energy Efficient LightingCX(s) Applied: B3.6Date: 01/15/2010Location(s): New YorkOffice(s): Advanced Research Projects Agency - Energy

  14. CX-009889: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    25A2445 - Ammonothermal Bulk GaN Crystal Growth for Energy Efficient Lighting CX(s) Applied: B3.6 Date: 01/15/2010 Location(s): New York Offices(s): Advanced Research Projects Agency-Energy

  15. Transphorm Takes Energy Efficiency to a New Level

    Broader source: Energy.gov [DOE]

    Transphorm, a startup partially funded by ARPA-E, develops Gallium nitride (GaN) semiconductors that could be used to make cost-effective, high-performance power converters for electric motor drives and components of solar panels and electric vehicles.

  16. CX-011468: Categorical Exclusion Determination

    Broader source: Energy.gov [DOE]

    Advanced Low-Cost Silicon-Carbide (SiC) and Gallium-Nitride (GaN) Wide Bandgap Inverters for Under-the-Hood Electric Vehicle Traction... CX(s) Applied: B3.6 Date: 10/29/2013 Location(s): Michigan Offices(s): National Energy Technology Laboratory

  17. Enhanced thermoelectric transport in modulation-doped GaN/AlGaN core/shell nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Song, Erdong; Li, Qiming; Swartzentruber, Brian; Pan, Wei; Wang, George T.; Martinez, Julio A.

    2015-11-25

    The thermoelectric properties of unintentionally n-doped core GaN/AlGaN core/shell N-face nanowires are reported. We found that the temperature dependence of the electrical conductivity is consistent with thermally activated carriers with two distinctive donor energies. The Seebeck coefficient of GaN/AlGaN nanowires is more than twice as large as that for the GaN nanowires alone. However, an outer layer of GaN deposited onto the GaN/AlGaN core/shell nanowires decreases the Seebeck coefficient at room temperature, while the temperature dependence of the electrical conductivity remains the same. We attribute these observations to the formation of an electron gas channel within the heavily-doped GaN coremore » of the GaN/AlGaN nanowires. The room-temperature thermoelectric power factor for the GaN/AlGaN nanowires can be four times higher than the GaN nanowires. As a result, selective doping in bandgap engineered core/shell nanowires is proposed for enhancing the thermoelectric power.« less

  18. Optical characteristics of nanocrystalline Al{sub x}Ga{sub 1?x}N thin films deposited by hollow cathode plasma-assisted atomic layer deposition

    SciTech Connect (OSTI)

    Goldenberg, Eda; Ozgit-Akgun, Cagla; Biyikli, Necmi; Kemal Okyay, Ali

    2014-05-15

    Gallium nitride (GaN), aluminum nitride (AlN), and Al{sub x}Ga{sub 1?x}N films have been deposited by hollow cathode plasma-assisted atomic layer deposition at 200?C on c-plane sapphire and Si substrates. The dependence of film structure, absorption edge, and refractive index on postdeposition annealing were examined by x-ray diffraction, spectrophotometry, and spectroscopic ellipsometry measurements, respectively. Well-adhered, uniform, and polycrystalline wurtzite (hexagonal) GaN, AlN, and Al{sub x}Ga{sub 1?x}N films were prepared at low deposition temperature. As revealed by the x-ray diffraction analyses, crystallite sizes of the films were between 11.7 and 25.2?nm. The crystallite size of as-deposited GaN film increased from 11.7 to 12.1 and 14.4?nm when the annealing duration increased from 30?min to 2?h (800?C). For all films, the average optical transmission was ?85% in the visible (VIS) and near infrared spectrum. The refractive indices of AlN and Al{sub x}Ga{sub 1?x}N were lower compared to GaN thin films. The refractive index of as-deposited films decreased from 2.33 to 2.02 (??=?550?nm) with the increased Al content x (0???x???1), while the extinction coefficients (k) were approximately zero in the VIS spectrum (>400?nm). Postdeposition annealing at 900?C for 2?h considerably lowered the refractive index value of GaN films (2.331.92), indicating a significant phase change. The optical bandgap of as-deposited GaN film was found to be 3.95?eV, and it decreased to 3.90?eV for films annealed at 800?C for 30?min and 2?h. On the other hand, this value increased to 4.1?eV for GaN films annealed at 900?C for 2?h. This might be caused by Ga{sub 2}O{sub 3} formation and following phase change. The optical bandgap value of as-deposited Al{sub x}Ga{sub 1?x}N films decreased from 5.75 to 5.25?eV when the x values decreased from 1 to 0.68. Furthermore, postdeposition annealing did not affect the bandgap of Al-rich films.

  19. ARM - VAP Process - sondeadjust

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    retired HFE M1 Browse Data Shouxian, Anhui, China retired NIM M1 Browse Data Niamey, Niger retired PGH M1 Browse Data ARIES Observatory, Nainital, Uttarkhand, India; AMF1...

  20. ARM - Datastreams - skyrad20s

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    retired PVC M1 Browse Data Highland Center, Cape Cod MA; AMF1 retired PYE M1 Browse Data Point Reyes, CA retired SBS M1 Browse Data Steamboat Springs CO, Valley Site; AMF2 retired...