Sample records for georgia athens ga

  1. Lamar Dodd School of Art 270 River Road Athens, GA 30602 GRADUATE ASSISTANTSHIP APPLICATION

    E-Print Network [OSTI]

    Arnold, Jonathan

    Lamar Dodd School of Art 270 River Road Athens, GA 30602 GRADUATE ASSISTANTSHIP BELOW: (1) I am currently enrolled in the Lamar Dodd School of Art ____________ degree program in the ____________________ area. (2) I have been officially accepted for admission to the Lamar Dodd School of Art

  2. Graduate School Enjoy Athens!

    E-Print Network [OSTI]

    Arnold, Jonathan

    Dean Graduate School Enjoy Athens! Great schools Affordable housing Eclectic dining Entertainment of the Graduate School. The University of Georgia (UGA), a land-grant/sea-grant university, is the largest schools and colleges, as well as a medical partnership with Georgia Regents University housed on the UGA

  3. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Hall, Daniel

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2011 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements of Georgia Research Foundation, Inc. Athens, Georgia Compliance We have audited the University of Georgia

  4. NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University of Georgia invites applications for the

    E-Print Network [OSTI]

    Arnold, Jonathan

    NOTICE OF FACULTY VACANCY IN ART EDUCATION The Lamar Dodd School of Art at The University Education Search Committee Lamar Dodd School of Art The University of Georgia 270 River Rd. Athens, Ga in regard to both outdoor and urban activities (www.exploregeorgia.org). The Lamar Dodd School of Art

  5. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Hall, Daniel

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2010 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements Foundation, Inc. Athens, Georgia Compliance We have audited the University of Georgia Research Foundation

  6. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Hall, Daniel

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2009 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements of Directors University of Georgia Research Foundation, Inc. Athens, Georgia Compliance We have audited

  7. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Hall, Daniel

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2010 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors 2 of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying statement of net assets

  8. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2011 #12;2 UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors of Directors University of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying

  9. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Hall, Daniel

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Compliance Reports For the Year Ended June 30, 2012 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Table of Contents Page Financial Statements Circular A-133 To the Board of Directors University of Georgia Research Foundation, Inc. Athens, Georgia

  10. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2012 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents 2 Page Report of Independent Auditors of Directors University of Georgia Research Foundation, Inc. Athens, Georgia We have audited the accompanying

  11. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2013 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial Statements Foundation, Inc. Athens, Georgia Report on Compliance for Each Major Federal Program We have audited

  12. A Spatial Simulation Model of Land Use Changes in a Piedmont County in Georgia

    E-Print Network [OSTI]

    Turner, Monica G.

    A Spatial Simulation Model of Land Use Changes in a Piedmont County in Georgia Monica Goigel Turner* Institute of Ecology University of Georgia Athens, Georgia ABSTRACT A spatial simulation model was developed be explicitly included in simulation models to gain an understanding of landscape level phenomena, and at least

  13. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less manure, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 COMMERCIAL EGG TIP... GEORGIA'S PHOSPHOROUS INDEX

  14. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    to Georgia soils. Soil test phosphorous level by itself is not adequate to determine environmental risk by applying less litter, adding buffers or applying other management procedures. Sources of Risk and Transport and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2004 BROILER TIP... GEORGIA'S PHOSPHOROUS INDEX

  15. Major Degree Campus Accounting B.B.A. Athens

    E-Print Network [OSTI]

    Arnold, Jonathan

    Major Degree Campus Accounting B.B.A. Athens Accounting M.Acc. Athens Adult Education Ed.D. Athens Adult Education Ed.S. Athens Adult Education M.Ed. Athens Adult Education Ph.D. Athens Adult Education Ed.D. Gwinnett Adult Education M.Ed. Online Advertising A.B.J. Athens African American Studies A

  16. 1197 South Lumpkin Street Athens Georgia 30602-3603

    E-Print Network [OSTI]

    Arnold, Jonathan

    ..................................................................... 2,500 Maximum Capacity (depending upon room layout and food service selected................................................................................ 2,500 Maximum Capacity (depending upon room layout and food service selected................................................................................3,000 Maximum Capacity (depending upon room layout and food service selected

  17. Forestry Policies (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia's Forests are managed by the Georgia Forestry Commission. In 2009 the Commission completed a statewide assessment of biomass resources:

  18. Georgia Hazardous Site Response Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Hazardous Site Response Act is Georgia’s version of Superfund. The Act provides for graduated fees on the disposal of hazardous waste, a trust fund to enable the EPD to clean up or plan...

  19. Georgia Groundwater Use Act (Georgia)

    Broader source: Energy.gov [DOE]

    The purpose of the Georgia Groundwater Use Act is to establish procedures to be followed to obtain a permit to withdraw, obtain or utilize groundwater and for the submission of information...

  20. Georgia Radiation Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Radiation Control Act is designed to prevent any associated harmful effects upon the environment or the health and safety of the public through the institution and maintenance of a...

  1. Georgia Utility Facility Protection Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Utility Facility Protection Act (GUFPA) was established to protect the underground utility infrastructure of Georgia. GUFPA mandates that, before starting any mechanized digging or...

  2. Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula

    E-Print Network [OSTI]

    Anastasiadis, Anastasios

    Space Physics in Greece: Experience and Future Prospects Ioannis A. Daglis, Anastasios Anastasiadis and Georgia Tsiropoula National Observatory of Athens, Institute of Ionospheric and Space Research, Penteli Engineering, Xanthi, Greece Abstract. Space Physics was born with the launch of the first artifi­ cial

  3. Georgia Geriatric Education Center

    E-Print Network [OSTI]

    Arnold, Jonathan

    Georgia Geriatric Education Center © Photography courtesy of the U.S. Administration on Aging. Georgia Geriatric Education Center Latestresourcesandtrainingforbestpracticesingerontologyandgeriatrics. The Georgia Geriatric Education Center (GGEC) is a statewide effort designed to help you access the latest

  4. Georgia Erosion and Sedimentation Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Erosion and Sedimentation Act (GESA) is designed to protect vegetated buffers. GESA establishes a minimum undisturbed, vegetated buffer of 25 feet for all streams in Georgia (measured...

  5. Georgia Water Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Water Quality Control Act (WQCA) is a set of environmental regulations and permitting requirements that comply with the federal Clean Water Act. The Georgia Water Quality Control Act...

  6. Georgia Nuclear Energy Financing Act (Georgia)

    Broader source: Energy.gov [DOE]

    The “Georgia Nuclear Energy Financing Act,” amends existing Georgia law to allow a utility to recover from its customers the costs of financing associated with the construction of a nuclear plant...

  7. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    , and lake associations. At the national level, GWRI has collaborative efforts with the California Energy with support from the U.S. Agency for International Development, World Bank, Food and Agriculture Organization Prices in Georgia" USGS 104B/GWRI Project, Susanna Ferriera # 2011GA275B #1266663 (3) Impact of Upstream

  8. Georgia Underground Storage Tank Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Underground Storage Act (GUST) provides a comprehensive program to prevent, detect, and correct releases from underground storage tanks (“USTs”) of “regulated substances” other than...

  9. Georgia Tech Dangerous Gas

    E-Print Network [OSTI]

    Sherrill, David

    1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

  10. Lamar Dodd School of Art Enjoy Athens!

    E-Print Network [OSTI]

    Hall, Daniel

    Director Lamar Dodd School of Art Enjoy Athens! Great schools Affordable housing Eclectic dining and nominations for the position of Director, Lamar Dodd School of Art. Founded in 1937, the School has 50 full, and the Performing Arts Center. Additional information about the Lamar Dodd School of Art is available at: http

  11. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    and Environmental Sciences / Athens, Georgia 30602-4356 NOVEMBER 2006 COMMERCIAL EGG TIP . . . BIOFUELS AND POULTRY PRODUCTION The generation of biofuels using current technology (ethanol from the fermentation of corn gain. As the production of biofuels has become established public policy, it is not surprising

  12. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 NOVEMBER 2002 BROILER TIP . . . COST-SHARE ASSISTANCE CAN to ensure that adequate water will always be available, especially in hot weather. Having a backup source

  13. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 MAY 2007 BROILER TIP . . . KEEPING BIRDS COOL IN HOT WEATHER. As warmer weather approaches, the threat of heat stress increases. Poultry producers need to anticipate

  14. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    educational programs, assistance and materials to all people without regard to race, color, national origin and Environmental Sciences / Athens, Georgia 30602-4356 MARCH 2007 BACKYARD FLOCK TIP . . . LIGHTING PROGRAMS. Much of this is Mother Nature's way of ensuring that the chicks would be reared in warmer weather

  15. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    in soils and risk of water contamination is complex. For nutrient management planning, a simple calculation Characteristics, Site Transport Characteristics, and Best Management Practices. Site Source Characteristics and Environmental Sciences / Athens, Georgia 30602-4356 JULY 2000 COMMERCIAL EGG TIP... THE PHOSPHOROUS INDEX

  16. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    selected based on importance of legal risk, potential cost, or environmental damage. In order to meet and Environmental Sciences / Athens, Georgia 30602-4356 JULY 2002 BROILER TIP . . . AGRICULTURAL ENVIRONMENTAL MANAGEMENT SYSTEMS In this age of expanding environmental scrutiny, management strategies that have

  17. Georgia Safe Dams Act of 1978 (Georgia)

    Broader source: Energy.gov [DOE]

    The purpose of the Georgia Safe Dams Act is to provide regulation, inspection and permitting of dams to the State. The Director of the Environmental Protection Division (EPD) is responsible for...

  18. Georgia Surface Mining Act of 1968 (Georgia)

    Broader source: Energy.gov [DOE]

    This law regulates all surface mining in Georgia, including the coastal zone. It includes provisions to “advance the protection of fish and wildlife and the protection and restoration of land,...

  19. Georgia Air Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

  20. Shore Protection Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Shore Protection Act is the primary legal authority for protection and management of Georgia's shoreline features including sand dunes, beaches, sandbars, and shoals, collectively known as the...

  1. athens area greece: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Greece C. Bekas, IBM, Zurich, Switzerland P. Chaviaropoulos, Center For Renewable Energy Sources (CRES), Greece V. Dougalis, Univ. Athens & IACMFORTH, Greece D. Fotiadis,...

  2. Democracy: Power to the People Athens and America

    E-Print Network [OSTI]

    Humphrey, Marty

    Democracy: Power to the People Athens and America Saturday, April 20, 2013 We offer this workshop. Athens was the first to develop a democracy as we understand it, and, when "power goes to the people," what obligations fall upon "the people" and individual citizens? We will examine this question

  3. Protection of Tidewaters (Georgia)

    Broader source: Energy.gov [DOE]

    The Protection of Tidewaters Act establishes the State of Georgia as the owner of the beds of all tidewaters within the State, except where title by a private party can be traced to a valid British...

  4. adjacent basement north: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    21 @Georgia at Athens, Georgia Oct 05 @ Tulane at New Orleans, GA Oct 12 Middle Tennessee Denton, Texas Oct 19 @Louisiana Tech Mohanty, Saraju P. 268 North Shore City Tourism...

  5. abeokuta north lga: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    21 @Georgia at Athens, Georgia Oct 05 @ Tulane at New Orleans, GA Oct 12 Middle Tennessee Denton, Texas Oct 19 @Louisiana Tech Mohanty, Saraju P. 111 North Shore City Tourism...

  6. Georgia Underground Gas Storage Act of 1972 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Underground Gas Storage Act, which permits the building of reserves for withdrawal in periods of peak demand, was created to promote the economic development of the State of Georgia and...

  7. Athens-Clarke County- Green Business Revolving Loan Fund

    Broader source: Energy.gov [DOE]

    Athens-Clarke County has created a Green Business Revolving Loan Fund for new or existing businesses. Funding is available for implementing eco-friendly products or services into a business or...

  8. Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

  9. Georgia Oil and Gas Deep Drilling act of 1975 (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia's Oil and Gas and Deep Drilling Act regulates oil and gas drilling activities to provide protection of underground freshwater supplies and certain "environmentally sensitive" areas. The...

  10. University of Georgia 2020 Strategic Plan

    E-Print Network [OSTI]

    Arnold, Jonathan

    ......................................................................34 Appendix E. University of Georgia Funding Source Trend Summary..........................................35University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building...............................................................................................................................................1 The Mission of the University of Georgia

  11. Georgia Hazardous Waste Management Act

    Broader source: Energy.gov [DOE]

    The Georgia Hazardous Waste Management Act (HWMA) describes a comprehensive, Statewide program to manage hazardous wastes through regulating hazardous waste generation, transportation, storage,...

  12. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  13. GaN/AlGaN heterojunction infrared detector responding in 814 and 2070 m ranges

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Georgia State University, Atlanta, Georgia 30303 S. G. Matsik NDP Optronics LLC, Mableton, Georgia 30126 A

  14. Georgia Cities Foundation- Green Communities Revolving Loan Fund (Georgia)

    Broader source: Energy.gov [DOE]

    The Green Communities Fund is a revolving loan fund providing low-interest loans to businesses located within the city limits of any city in Georgia. Loans are available for existing as well as new...

  15. Georgia Interfaith Power and Light- Energy Improvement Grants (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia Interfaith Power and Light (GIPL) offers grants of up to $10,000 to congregations or faith-based communities, including faith-based schools. Grant funds may be used for energy conservation...

  16. Marketers' Certificate of Authority (Georgia)

    Broader source: Energy.gov [DOE]

    The Marketers' Certificate of Authority is mandated by the Georgia Public Service Commission (PSC), and is a part of the Natural Gas Competition and Reregulation Act. It requires that any company...

  17. Georgia politics, 1732-1775

    E-Print Network [OSTI]

    Dennis, Joseph Lloyd

    1967-01-01T23:59:59.000Z

    1733 law forbade the "Visit, frequent haunt, Trade to Traffick or Barter" with the Indians of Georgia unless duly licensed by the Georgia covernment. Prescribed punishment for violators of the law was a one hundred pounds sterling fine. Goods... perfected his chinaware for sale. Everyone, including Stephens, wished him well in his new production, if for no other reason than it would be of benefit to the prosperity of the struggling colony. Writing to the Trustees, however, Stephens ex- pressed...

  18. E-Print Network 3.0 - athens tandem accelerator Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    results for: athens tandem accelerator Page: << < 1 2 3 4 5 > >> 1 Workshop on Thermonuclear Reaction Rates for Astrophysics Applications Summary: , particle physics, neutrino...

  19. Georgia Green Loans Save and Sustain Program

    Broader source: Energy.gov [DOE]

    Georgia Green Loans, a non-profit microlending agency, offers funding to "green" businesses using funding from a Georgia Environmental Finance Authority (GEFA) grant. The GEFA grant is based on...

  20. BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY

    E-Print Network [OSTI]

    Hutcheon, James M.

    1 BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY GENERAL TABLE OF CONTENTS Chapter 1: Introduction to the Biology Department.............................................5 Chapter 2 #12;2 BIOLOGY GRADUATE STUDENT SOURCEBOOK GEORGIA SOUTHERN UNIVERSITY DETAILED TABLE OF CONTENTS

  1. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    dissemination, and works collaboratively with various local, state, and federal agencies. These include #35334). (5) Tidal Streams: A Renewable Energy Source for Georgia , Kevin Haas, Georgia Institute, environmental organizations, lake associations, California Energy Commission, California Department of Water

  2. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Hall, Daniel

    UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Financial Statements for the year ended June 30, 2009 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. Contents Page Report of Independent Auditors 2 Standards 45 #12;Report of Independent Auditors Board of Directors University of Georgia Research Foundation

  3. Georgia gulf widens the loop

    SciTech Connect (OSTI)

    Mullin, R.

    1992-12-09T23:59:59.000Z

    In describing Georgia Gulf's experience with Responsible Care, president and CEO Jerry Satrum turns first to the pollution prevention code. Noting that the $838-million/year commodities and vinyl resins producer is not on the list of companies with the highest reportable emissions, Satrum says that Georgia Gulf has, nonetheless, reduced emissions from 4.5 million tons in 1987 to 1 million tons. The waste minimization element of pollution prevention has also had a profound effect on a compelling challenge to the company - getting its smaller operations into the loop on Responsible Care. It also brings to bear the product stewardship code - waste and materials management programs at Georgia Gulf's three vinyl compounding operations address waste issues for suppliers and customers.

  4. Terahertz absorption in AlGaAs films and detection using heterojunctions

    E-Print Network [OSTI]

    Perera, A. G. Unil

    a Department of Physics and Astronomy, Georgia State University, Atlanta, GA 30303, USA b NDP Optronics, LLC-mail address: uperera@gsu.edu (A.G.U. Perera). 1 Also at NDP Optronics LLC. Infrared Physics & Technology 47

  5. Georgia Southern University Information Technology

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Information Technology Organization Chart 2013-2014 FINAL: September 18, 2013 R\\Work\\Common:\\OrgCharts\\Rev2014\\ Information Technology \\CIO Produced: Strategic Research of the groups of units reporting there. President Vice President for Information Technology and Chief

  6. Georgia Tech Vehicle Acquisition and

    E-Print Network [OSTI]

    1 2012 Georgia Tech 10/10/2012 Vehicle Acquisition and Disposition Manual #12;2 Vehicle Procedures Regardless of value, all vehicles should be included in this process. Acquisition of a Vehicle 1. Contact Fleet Coordinator to guide the departments in the purchasing process for all vehicles. 2. Fill out

  7. Genetic diversity and structure in two species of Leavenworthia with self-incompatible and self-compatible populations

    E-Print Network [OSTI]

    Koelling, Vanessa A.; Hamrick, J.L.; Mauricio, Rodney

    2011-01-01T23:59:59.000Z

    1 Genetic Diversity and Structure in Two Species of Leavenworthia With Self- incompatible and Self-compatible Populations Vanessa A. Koelling*, J. L. Hamrick‡, and Rodney Mauricio* *Department of Genetics, University of Georgia, Athens, GA... 30602, USA, ‡Department of Plant Biology, University of Georgia, Athens, GA 30602, USA Keywords: Leavenworthia, self-incompatibility, selfing, genetic diversity, mating system Corresponding author: Vanessa A. Koelling, Current Address: Department...

  8. Livestock & Poultry --The Largest Segment of Georgia Agriculture

    E-Print Network [OSTI]

    Navara, Kristen

    Crops* 40% Poultry 52% Livestock & Dairy 8% Poultry -- The Largest Segment of Georgia Agriculture Percent Total by Commodity Prepared by: Georgia Poultry Federation Source: University of Georgia, 2010 Pounds Produced: 1970 ­ 2011 Prepared by: Georgia Poultry Federation From: Georgia Agricultural

  9. 1197 South Lumpkin Street Athens Georgia 30602-3603 weddings@georgiacenter.uga.edu 706.542.2654 Bartender Charges

    E-Print Network [OSTI]

    Arnold, Jonathan

    in our food services areas. Banquet Alcohol Service Information · Prices are effective July 1, 2011.542.2654 Bartender Charges Bartender charges are applicable for all bar service packages. One bartender is requiredFTer .................................................................................................................$ 8.00 maximum charge Per locaTion or maximum charge For Two Bar locaTions oPen Bar service -- ac

  10. Georgia Biofuel Directory A directory of Georgia industries that use biofuels.

    E-Print Network [OSTI]

    Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

  11. Petroleum Pipeline Eminent Domain Permit Procedures (Georgia)

    Broader source: Energy.gov [DOE]

    The Petroleum Pipeline Eminent Domain Permit Procedures serve to protect Georgia's natural and environmental resources by requiring permits be issued by the Director of the Environmental Protection...

  12. Georgia Power- Commercial Energy Efficiency Program

    Broader source: Energy.gov [DOE]

    Georgia Power offers rebates to business customers who pay taxes and non-tax paying commercial customers. Incentives are available for lighting, HVAC, food service equipment, refrigeration...

  13. Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)

    Broader source: Energy.gov [DOE]

    The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

  14. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Energy Savers [EERE]

    Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear...

  15. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Energy Savers [EERE]

    to Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close...

  16. Popular urban settlements in Athens : a comparative study of low income housing

    E-Print Network [OSTI]

    Kitsiou, Triada

    1981-01-01T23:59:59.000Z

    This study is concerned with aspects of housing and urban development related to the lower income groups in the context of urbanization in Athens, Greece. It identifies and evaluates typical low income housing settlements ...

  17. athens greece 20-22: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IBSC27WP IX-3 Athens, 23-27 May 2005 LINKING HORIZONTAL AND VERTICAL MODELS TO PREDICT 3D + time DISTRIBUTIONS OF BIRD DENSITIES Judy Shamoun-Baranes1 , Henk Sierdsema. Royal...

  18. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    ) INFORM: Integrated Forecast and Reservoir Management System for Northern California, Aris Georgakakos PI Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US planning and management framework for Georgia. The GWRI planning tools are used to (i) determine flow

  19. Articulated Swimming Creatures Georgia Institute of Technology

    E-Print Network [OSTI]

    Turk, Greg

    to swim straight and stay within a given energy budget. Our creatures can perform path following by firstArticulated Swimming Creatures Jie Tan Georgia Institute of Technology Yuting Gu Greg Turk Georgia to creating realistic swimming be- havior for a given articulated creature body. The two main com- ponents

  20. E-Print Network 3.0 - athens ga usa Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chen, V... . Northrup Xerox Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 ... Source: Feenstra, Randall - Department of Physics, Carnegie...

  1. Recovery Act State Memos Georgia

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankCombustion | Department ofT ib l L dDepartment ofList?Department09 SectionGeorgia For questions about

  2. Synthesis and properties of green phosphor SrGa2S4:Eu2 emission displays by an environmentally clean technique

    E-Print Network [OSTI]

    Wang, Zhong L.

    by an environmentally clean technique Y.D. Jianga , G. Villalobosa , J.C. Souriaua , H. Parisa , C.J. Summersa , Z.L. Wangb,* a Phosphor Technology Center of Excellence, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Materials Science and Engineering, Georgia

  3. Capacitance hysteresis in GaN/AlGaN heterostructures L. E. Byrum,1

    E-Print Network [OSTI]

    Matsik, Steven G.

    Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30303, USA 2 NDP Optronics

  4. Maintenance expo................... 3 Georgia visitors....................... 3

    E-Print Network [OSTI]

    Minnesota, University of

    Inside · Maintenance expo................... 3 · Georgia visitors....................... 3 · Fluid Power Center ................ 4 · CTS services Web page .......... 4 A monthly report on transportation transformation of nation's transportation policy The results of a 13-month study led by David Kittelson

  5. Central Georgia EMC- Photovoltaic Rebate Program

    Broader source: Energy.gov [DOE]

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  6. Al fraction induced effects on the capacitance characteristics -GaN/AlxGa1-xN IR detectors

    E-Print Network [OSTI]

    Dietz, Nikolaus

    , Georgia State University, Atlanta, Georgia 30303, USA; bNDP Optronics LLC, Mableton, Georgia 30126, USA; c

  7. E-Print Network 3.0 - atlanta georgia metropolitan Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Summary: University; Atlanta, Georgia September 1996 - Assistant Professor of Political Science Emory University... ; Atlanta, Georgia September 1993 - August 1996 On...

  8. Associations Between Management Forecast Accuracy and Pricing of IPOs in Athens Stock

    E-Print Network [OSTI]

    Jensen, Max

    1 Associations Between Management Forecast Accuracy and Pricing of IPOs in Athens Stock Exchange Dimitrios Gounopoulos* University of Surrey, U.K. This study examines the earnings forecast accuracy earnings forecast and pricing ofIPOs. It uses a unique data set of 208 IPOs, which were floated during

  9. Great Social Scene: Athens is home to a thriving local music scene that has produced

    E-Print Network [OSTI]

    Arnold, Jonathan

    Activities: Athens and the surrounding area are home to Bulldog, Intramural and county sports teams, climbing. Bioinformatics provides the frame- work and tools to mine and analyze the avalanche of data that is emerging from nearly every life science discipline including crop genomics, biofuels, cancer, ecology, human health

  10. THE NEW MULTICHANNEL RADIOSPECTROGRAPH ARTEMIS-IV/HECATE, OF THE UNIVERSITY OF ATHENS

    E-Print Network [OSTI]

    Athens, University of

    THE NEW MULTICHANNEL RADIOSPECTROGRAPH ARTEMIS-IV/HECATE, OF THE UNIVERSITY OF ATHENS C. CAROUBALOS@cc.uoa.gr (Received 14 April 2000; accepted in revised form 5 February 2001) Abstract. We present the new solar shocks, the acceleration of energetic particles from shock waves, and the relation of energetic electrons

  11. atlanta georgia usa: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values SECURING AMERICA'S FUTURE 12;0 1Georgia Tech Research Institute Annual Report Bennett, Gisele 9 School of Biology Atlanta, Georgia 30332-0230 USA Biology and Medicine...

  12. The University of Georgia Center for Agribusiness and Economic Development

    E-Print Network [OSTI]

    Scott, Robert A.

    and Environmental Sciences An Evaluation of Direct and Indirect Economic Losses Incurred by Georgia FruitThe University of Georgia Center for Agribusiness and Economic Development College of Agricultural ............................................................................................................................................................ 3 Economic Consequences

  13. Sensible Solar Fueling Energy Revolution in Georgia | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Sensible Solar Fueling Energy Revolution in Georgia Sensible Solar Fueling Energy Revolution in Georgia May 14, 2010 - 3:35pm Addthis Joshua DeLung During his recent commencement...

  14. GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY

    E-Print Network [OSTI]

    Das, Suman

    and safety hazards, and encourage the reporting of hazards and safety-related incidents; work cooperativelyGEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia

  15. Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Estimated 2011 Georgia

    E-Print Network [OSTI]

    Scott, Robert A.

    Comparison of Georgia and US Per Capita Fruit, Vegetable, Livestock, and Poultry Consumption, 2011 Capita) Data System 4 Value= Per capita consumption (column 3) multiplied by Georgia Population (9 Estimated 2011 Georgia Population (9,687,653)1 2011 Farm Gate Production (lbs)2 2010 Per Capita US

  16. MSc STUDY PROGRAMME IN THE FACULTY OF GEOLOGY AND GEOENVIRONMENT, UNIVERSITY OF ATHENS 201314 Geology and Geoenvironment

    E-Print Network [OSTI]

    Kouroupetroglou, Georgios

    MSc STUDY PROGRAMME IN THE FACULTY OF GEOLOGY AND GEOENVIRONMENT, UNIVERSITY OF ATHENS 201314 1 Geology and Geoenvironment MSc Programme STUDENT HANDBOOK Applied Environmental Geology, Stratigraphy Paleontology, Geography and Environment, Dynamic Geology and Tectonics/ Hydrogeology, Geophysics

  17. Georgia Power- Residential Solar and Heat Pump Water Heater Rebate (Georgia)

    Broader source: Energy.gov [DOE]

    Georgia Power customers may be eligible for rebates up to $250 each toward the installation costs of a 50 gallon or greater solar water heater or heat pump water heater. The solar water heater or...

  18. Georgia Southern University Business and Finance

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Business and Finance Organization Chart 2013-2014 FINAL: September 18, 2013 R:\\Work\\Common\\Org Charts\\Rev2014\\ Business & Finance Produced: Strategic Research & Analysis/KBM President Vice President for Business and Finance Associate Vice President for Finance Associate Vice

  19. The University of Georgia Teaching Academy

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Teaching Academy Mission Statement The mission of the Academy is to promote and celebrate excellence in teaching and to foster learning through inquiry. Goals The Academy Engineering David S. Williams, Honors Program Teaching Academy Induction Dinner and Ceremony Membership Class

  20. The University of Georgia Senior Vice President

    E-Print Network [OSTI]

    Arnold, Jonathan

    directly to the Senior Vice President. In Summer 2011--in response to the recent development to the University of Georgia). These factors included, among others: decreasing state support; increased demands historic campus; and hiring, retention, compression and morale issues compounded by the inability

  1. 2013 GEORGIA PEST MANAGEMENT HANDBOOK Commercial Edition

    E-Print Network [OSTI]

    Arnold, Jonathan

    Pathology The University of Georgia Cooperative Extension College of Agricultural and Environmental Sciences, application, and safe use of pest control chemicals. The Handbook has recommendations for pest control information on control of insects, plant diseases, and weeds is available in bulletins and circulars published

  2. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    the sponsorship of the US EPA, GWRI performed technical analysis of a draft ACT compact. Assessment results were of Engineers, and Southeastern Power Administration) and the ACT-ACF Federal Commissioner. Assessment resultsGeorgia Water Resources Institute Annual Technical Report FY 2000 Introduction In Fiscal Year 2000

  3. IEEE Energy2030 Atlanta, Georgia, USA

    E-Print Network [OSTI]

    Ratnasamy, Sylvia

    (IPS), and can consist of loads, energy sources, and energy storage. The desired result of the proposed architecture is to produce a grid network designed for distributed renewable energy, prevalent energy storageIEEE Energy2030 Atlanta, Georgia, USA 17-18 November 2008 An Architecture for Local Energy

  4. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  5. Georgia Institute of Technology Fire Watch Procedures

    E-Print Network [OSTI]

    -385-1000) Area II (404-385-2000) Area III (404-385-3000) Area IV (404-385-4000) Area V (404-385-5000) II. Fire Marshal 404-894-2990 2. Georgia Tech Police Department 404-894-2500 3. Facilities-Area 1 (404 the fire watch is in effect. 2. Patrol the entire area affected by the service outage every 30 minutes

  6. Alternative Fuels Data Center: Georgia Information

    Alternative Fuels and Advanced Vehicles Data Center [Office of Energy Efficiency and Renewable Energy (EERE)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center Home Page onAlternativeConnecticutEthanolNatural GasFloridaGeorgia

  7. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes. This year,...

  8. Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency

    E-Print Network [OSTI]

    Garmestani, Hamid

    Seth Marder Title: Regent's Professor, Georgia Power Chair in Energy Efficiency University's Professor, the Georgia Power Chair of Energy Efficiency, and Professor of Chemistry and Materials Science

  9. M. I. Finley's 'Studies in Land and Credit in Ancient Athens' Reconsidered

    E-Print Network [OSTI]

    Millett, Paul

    2013-10-30T23:59:59.000Z

    City-States’. This remarkable document has been preserved in the ‘Heichelheim Dossier’. It is effectively in seven parts: (i) a preamble, explaining the thinking behind the proposal; (ii) a detailed listing of proposed contents; (iii) an outline of a... -contradictory, on the face of it.’ As early as 1942, J.V.A. Fine, Professor of Greek History at Princeton, had been approached by his colleague Benjamin Meritt, representing the American School in Athens, and by Anthony Raubitschek to edit and publish those horoi...

  10. 1197 South Lumpkin Street Athens Georgia 30602-3603 weddings@georgiacenter.uga.edu 706.542.2654 recePTion service inFormaTion

    E-Print Network [OSTI]

    Arnold, Jonathan

    ] Chef's Selection of Cookies, Brownies, and Other Bakery Sweets, Snack Baskets, Orange-Cranberry, and Sliced Fresh Strawberries. Cookies, Pretzels, Orange-Cranberry Punch, and Hot Coffee Punch service [3091] Orange-Cranberry Punch BeFore-dinner deluxe social hour wiThouT alcohol [3095] Snack Baskets, Potato

  11. The Gerontology Institute at Georgia State University invites applications for

    E-Print Network [OSTI]

    Arnold, Jonathan

    to external funding. Georgia State University is the Southeast's leading urban research institution. More thanThe Gerontology Institute at Georgia State University invites applications for a tenure. This position is affiliated with the University's Partnership in Urban Health Research (http

  12. URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia

    E-Print Network [OSTI]

    Onsrud, Harlan J.

    reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due' support for market reform initiatives. With the ethnic conflict under control, the USAID assessment team

  13. Water Management Laws in Georgia Ciannat M. Howett

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    for the Northern District of Georgia (see State of Georgia v. United States Army Corps of Engineers et al., 2.01-CV Sharing Agreements/Interstate Compacts: The Example of the Tri-state Water Negotiations As water resources, states across the nation ­ even on the relatively water-rich east coast ­ have been focusing more

  14. Environmental radionuclide distribution in Georgia after the Chernobyl accident

    SciTech Connect (OSTI)

    Mosulishvili, L.M.; Shoniya, N.I.; Katamadze, N.M. [Institute of Physics, Tbilisi, Georgia (Russian Federation)] [and others

    1994-01-01T23:59:59.000Z

    Atmospheric Chernobyl-released radioactivity, assessed at about 2 x 10{sup 18} Bq, caused global environmental contamination. Contaminated air masses appeared in the Transcaucasian region in early May, 1986. Rains that month promoted intense radionuclide deposition all over Georgia. The contamination level of western Georgia considerably exceeded the contamination level of eastern Georgia. The Black Sea coast of Georgia suffered from the Chernobyl accident as much as did strongly contaminated areas of the Ukraine and Belarus`. Unfortunately, governmental decrees on countermeasures against the consequences of the Chernobyl accident at that time did not even refer to the coast of Georgia. The authors observed the first increase in radioactivity background in rainfall samples collected on May 2, 1986, in Tbilisi. {gamma}-Spectrometric measurements of aerosol filters, vegetation, food stuffs, and other objects, in addition to rainfall, persistently confirmed the occurrence of short-lived radionuclides, including {sup 131}I. At first, this fact seemed unbelievable, because the Chernobyl accident had occurred only 4-5 days earlier and far from Georgia. However, these arguments proved to be faulty. Soon, environmental monitoring of radiation in Georgia became urgent. Environmental radionuclide distribution in Georgia shortly after the Chernobyl accident, as well as the methods of analysis, are reported in this paper.

  15. Categorical Exclusion Determinations: Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up fromDepartmentTie Ltd:JuneNovember 26, 20149 CategoricalColoradoof EnergyGeorgia

  16. Alamo, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergy InformationTuri BiomassWheeler County, Georgia. It falls under

  17. GEORGIA GENERAL ASSEMBLY 4/2010

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor's note:ComputingFusionSan Ramon,GlobalU.S.GEORGIA

  18. Adel, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300 SouthWaterBrasil Jump to:Iowa ASHRAEAddis, LA) JumpAddress (SmartGeorgia:

  19. Americus, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 East 300Algoil JumpAltergy SystemsAmerican EnergyAmericus, Georgia: Energy Resources

  20. Chamblee, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Information on PV2009 |Chamblee, Georgia: Energy Resources Jump to:

  1. Forisk Consulting Forisk Consulting LLC PO Box 5070 Athens, GA 30604 770.725.8447 hclark@forisk.com

    E-Print Network [OSTI]

    Mazzotti, Frank

    to timber markets, wood bioenergy, and forest operations. Our experience and interests focus on better@forisk.com Date: July 2013 Re: Market Analyst About Forisk Consulting Forisk conducts applied research related in the forest industry, wood bioenergy and timberland investing sectors. Forisk specializes in analyzing

  2. EWEC 2006, Athens, The Anemos Wind Power Forecasting Platform Technology The Anemos Wind Power Forecasting Platform Technology -

    E-Print Network [OSTI]

    Boyer, Edmond

    EWEC 2006, Athens, The Anemos Wind Power Forecasting Platform Technology 1 The Anemos Wind Power a professional, flexible platform for operating wind power prediction models, laying the main focus on state models from all over Europe are able to work on this platform. Keywords: wind energy, wind power

  3. International Conference on Experiments/Process/System Modeling/Simulation/Optimization Athens, 6-9 July, 2011

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -EpsMs0 Athens, 6-9 July, 2011 © IC-EpsMsO NUMERICAL SIMULATION IN VERTICAL WIND AXIS TURBINE WITH PITCH turbine (HAWTs) and vertical-axis wind turbine (VAWTs)The present study concerns a small VAWT technology.simonet@ensam.eu Keywords: numerical simulation, performance coefficient, unsteady simulation, VAWT, vertical axis, wind

  4. OA mandate of the MTA -Athens, Oct. 18, 2013 -Holl A. 1 OA mandate of the Hungarian Academy of

    E-Print Network [OSTI]

    Holl, András

    support mechanism: help-desk, administrator network, trainings, materials, Author Addendum ­ technical help: SWORD upload #12;OA mandate of the MTA - Athens, Oct. 18, 2013 - Holl A. 6 Needed: ­ MTA requested consultation/training.) In the framework of SIM4RDM monitoring tool will be developed. OA

  5. U.S. Hydropower Resource Assessment - Georgia

    SciTech Connect (OSTI)

    A. M. Conner; B. N. Rinehart; J. E. Francfort

    1998-10-01T23:59:59.000Z

    The U.S. Department of Energy is developing an estimate of the undeveloped hydropower potential in the United States. For this purpose, the Idaho National Engineering and Environmental Laboratory developed a computer model called Hydropower Evaluation Software (HES). HES measures the undeveloped hydropower resources available in the United States, using uniform criteria for measurement. The software was developed and tested using hydropower information and data provided by the Southwestern Power Administration. It is a menu-driven program that allows the personal computer user to assign environmental attributes to potential hydropower sites, calculate development suitability factors for each site based on the environmental attributes present, and generate reports based on these suitability factors. This report describes the resource assessment results for the State of Georgia.

  6. Diverse Power- Energy Efficient Existing Homes Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Diverse Power is a member-owned electric cooperative that provides electric service to customers in Troup, Harris, Heard, Meriwether, Muscogee and Coweta counties in Georgia. Diverse Power offers a...

  7. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

  8. Jackson EMC- Residential Energy Efficiency Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Jackson Electric Membership Corporation (EMC) is an electric cooperative that serves 194,000 customers in 10 counties in northeast Georgia. To encourage its residential customers to adopt energy...

  9. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

  10. EcoCAR Challenge Georgia Institute of Technology

    E-Print Network [OSTI]

    Houston, Paul L.

    EcoCAR Challenge Georgia Institute of Technology Outreach Report Date: 11/09/2010 #12;11/9/2010 2 plan on leveraging our media contacts, GM sponsors, and Atlanta Clean Cities sponsors to potentially

  11. City of Ellaville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, GeorgiaElectra Place:Ellaville, Georgia

  12. Fabrication and Imaging of Protein Crossover Structures John R. LaGraff,1

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    Department of Physics and Astronomy, University of Georgia, Athens, GA 30602, USA 3 Wadsworth Center development of protein chips, reliability and reproducibility remain elusive owing primarily to an incomplete pattern transfer and maintenance of function will strongly depend on how the stamp and substrate surfaces

  13. United States Department of

    E-Print Network [OSTI]

    . Poplars are known to be effective in phytoremediation and associated phytotechnologies, and are capable of Georgia, D.B. Warnell School of Forestry and Natural Resources, Athens, GA #12;Introduction Poplar poplar bibliography reported literature published from 1854 to 1963 (Farmer and McNight 1967), the second

  14. Environmental transmission of low pathogenicity avian influenza viruses and its implications

    E-Print Network [OSTI]

    M. Drakea a Odum School of Ecology, University of Georgia, Athens, GA 30602; b Center for Tropical and public health challenge because this system represents both a reser- voir for recombination and a source diseases, transmission theory assumes that the majority of infections is caused by direct interactions

  15. Acknowledging Conservation Trade-Offs and Embracing Complexity

    E-Print Network [OSTI]

    Vermont, University of

    alleviation, biodiversity conservation, and climate- change mitigation; REDD may involve substantial tradeEssay Acknowledging Conservation Trade-Offs and Embracing Complexity PAUL D. HIRSCH, WILLIAM M, U.K. Center for Integrative Conservation Research, University of Georgia, Athens, GA 30602, U

  16. Anaerobic methane oxidation in metalliferous hydrothermal sediments: influence on carbon flux and

    E-Print Network [OSTI]

    Girguis, Peter R.

    Anaerobic methane oxidation in metalliferous hydrothermal sediments: influence on carbon flux of Georgia, Athens, GA 30602-3636, USA. Summary The anaerobic oxidation of methane (AOM) is a glo- bally significant sink that regulates methane flux from sediments into the oceans and atmosphere. Here we examine

  17. Connect, Collaborate, Commercialize There are many different opportunities for engagement and technology transfer at Georgia

    E-Print Network [OSTI]

    Garmestani, Hamid

    and technology transfer at Georgia Tech. Working together we can tailor a relationship unique to your company

  18. UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA

    E-Print Network [OSTI]

    Arnold, Jonathan

    UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE's Office UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE's Office UGA ID Number Last Name First MI Academic Term THE UNIVERSITY OF GEORGIA APPLICATION TO MAKE LATE

  19. E-Print Network 3.0 - atlanta ga usa Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Physics and Astronomy, Georgia State University, Atlanta, Georgia... 30303, USA 3 NDP Optronics, Mableton, Georgia 30126, USA *Corresponding author: wzshen... -band imaging device,...

  20. Atlanta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is640623°Atlanta, GA) Jump to:

  1. US SoAtl GA Site Consumption

    U.S. Energy Information Administration (EIA) Indexed Site

    household (2,067) in Georgia are similar to the U.S. household averages. * Per household electricity consumption in Georgia is among the highest in the country, but similar to...

  2. Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute

    E-Print Network [OSTI]

    Das, Suman

    1 Pulp and Paper Corrosion Symposium Georgia Tech Renewable Bioproducts Institute November 2014 Digester Corrosion Margaret Gorog Federal Way, WA 2 · Chips plus a mixture of white and black liquor · The pulp is then blown from the bottom of the vessel into a blow tank · Corrosion occurs during filling

  3. POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES,

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY REGARDING SERVICE ANIMAL ACCESS TO UNIVERSITY OF GEORGIA FACILITIES, PROGRAMS, SERVICES AND ACTIVITIES This policy ("Policy") is to implement federal and state laws regarding access for service animals, for purposes of this Policy, "Service Animals" are collectively defined to include those that are defined

  4. School of Earth and Atmospheric Sciences Georgia Institute of Technology

    E-Print Network [OSTI]

    Weber, Rodney

    School of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative research and educate the future leaders in earth and atmospheric sciences for the 21st century, within

  5. Ambient habitat noise and vibration at the Georgia Aquarium

    E-Print Network [OSTI]

    Johnson, Michael T.

    Ambient habitat noise and vibration at the Georgia Aquarium P. M. Scheifele Department significant levels of background noise due to pumps and motors. This noise, together with pool architecture to quantify the ambient noise levels in the water from machine vibration and from in-air performance speaker

  6. Georgia Institute of Technology For more information contact

    E-Print Network [OSTI]

    Nair, Sankar

    , 2007) -- We feel it at the pump. Fuel prices are at record highs and so is the demand for alternative Biofuels, the Georgia Research Alliance and one of the U.S. Department of Energy's new BioEnergy Research in the United States, but concerns exist about the future price and availability of corn as a food crop if it

  7. BIOTROPICA *(*): ****** **** 10.1111/j.1744-7429.2007.00337.x Impact of Research Trails on Seedling Dynamics in a Tropical Forest

    E-Print Network [OSTI]

    Goldsmith, Greg

    on Seedling Dynamics in a Tropical Forest Liza S. Comita1 Department of Biology, University of Georgia, Athens

  8. published in Proc. Int. Conf. Parallel Architectures and Languages, Athens, July, 1994 Lecture Notes in Computer Science, Vol. 817, SpringerVerlag, Berlin, 1994, pp. 313322

    E-Print Network [OSTI]

    Bystroff, Chris

    published in Proc. Int. Conf. Parallel Architectures and Languages, Athens, July, 1994 Lecture Notes in Computer Science, Vol. 817, Springer­Verlag, Berlin, 1994, pp. 313­322 Run­Time Optimization. Szymanski Department of Computer Science, Rensselaer Polytechnic Institute Troy, New York 12180­3590 USA

  9. North Druid Hills, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City)Norristown,BraddockDruid Hills, Georgia: Energy

  10. Gresham Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer County is a county in Oklahoma. Its FIPSGresham Park, Georgia:

  11. Henry County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio:Greer CountyCorridorPartImages JumpHendryHenry County, Georgia

  12. Middle Georgia El Member Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocus Area Energy Efficiency, RenewableMiddle Georgia El Member

  13. Monroe County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte3 Climate Zone Subtype A. Places in Monroe County, Georgia Culloden,

  14. Meriwether County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to:46 -Energieprojekte GmbH Jump to: navigation, search Name: MeridianCounty, Georgia:

  15. Georgia - Seds - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperativeA2. World liquids consumptionEmail:PlantshortshortlongGeorgia - Seds -

  16. Putnam County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: EnergyPotentialUrbanUtilityScalePVCapacityPulaski County, Kentucky:County, Georgia: Energy Resources Jump to:

  17. Quitman County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: EnergyPotentialUrbanUtilityScalePVCapacityPulaski County, Kentucky:County, Georgia:Quay9159785°Quioque,

  18. City of Acworth, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuoCatalystPathways CalculatorinAcworth, Georgia (Utility

  19. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuoCatalystPathways CalculatorinAcworth, Georgia

  20. City of Doerun, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, Georgia (Utility Company) Jump to:

  1. City of Fairburn, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company) JumpDoerun, GeorgiaElectraElsmore,

  2. City of Griffin, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company)Galion, OhioInformation Cove, TexasGriffin, Georgia

  3. City of Hogansville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (Utility Company)Galion,Harrisonville,HickmanHogansville, Georgia

  4. City of Moultrie, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhio (UtilityHolyrood,Martinsville,Moultrie, Georgia (Utility Company) Jump

  5. City of Washington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDITOhioOglesby,Sullivan, Missouri (UtilityUnionWahoo, NebraskaMinnesotaGeorgia

  6. City of Quitman, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgiaArkansas References: EIA Form

  7. E-Print Network 3.0 - airfield savannah georgia Sample Search...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Alliance Students Summary: You must be in good academic standing at Armstrong to cross-register at Georgia Tech Savannah (GTS... .gatech.educalendar-events...

  8. E-Print Network 3.0 - area waynesboro georgia Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Wildlife Habitat Conservation Summary: landowners in priority areas, has increased. Cherokee Rock Village, Walker County, Georgia Nate... , and public access to recreation areas....

  9. University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 Nomination Form

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia College of Agricultural and Environmental Sciences Alumni Association 2012 in the College of Agricultural and Environmental Sciences Activity Center. To be displayed in an attractive

  10. adults georgia 2006-2007: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology, automatically supersede the contents of this manual. A GTA is a temporary Bennett, Gisele 3 Georgia Tech : Catalog 2006 2007 : Home 2006 -2007 General Catalog...

  11. Coweta-Fayette EMC- Residential Solar Water Heater Rebate Program (Georgia)

    Broader source: Energy.gov [DOE]

    Coweta-Fayette Electric Membership Corporation (EMC) provides electric and natural gas service to 58,000 customers in Georgia's Coweta, Fayette, Meriwether, Heard, Troop and Fulton counties.

  12. Assistant Professor of Gerontology The Gerontology Institute at Georgia State University invites applications for a tenure-track assistant

    E-Print Network [OSTI]

    Arnold, Jonathan

    lead to external funding. Georgia State University is the Southeast's leading urban researchAssistant Professor of Gerontology The Gerontology Institute at Georgia State University invites faculty representing numerous disciplines across the University. Further information about the Gerontology

  13. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program

    E-Print Network [OSTI]

    Jackson, D.

    A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

  14. Negative capacitance in GaN/AlGaN heterojunction dual-band detectors L. E. Byrum,1

    E-Print Network [OSTI]

    Dietz, Nikolaus

    , USA 2 NDP Optronics LLC, Mableton, Georgia 30126, USA 3 School of Electrical and Computer Engineering

  15. Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in

    E-Print Network [OSTI]

    Arnold, Jonathan

    Archway Education Professional The University of Georgia is seeking a qualified candidate to serve as the Archway Education Professional in Dalton-Whitfield County, Georgia. The Archway Partnership was initiated with the University of Georgia. The Archway Education Professional is a UGA Public Service (Public Service Assistant

  16. University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program Description As part of the University of Georgia (UGA) / University of Liverpool Partnership, we are providing for ongoing sponsored funding to continue the collaborations. Eligibility Criteria To be eligible

  17. POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

  18. EcoCAR by Georgia Tech efficiency through design and innovation

    E-Print Network [OSTI]

    Houston, Paul L.

    engineering competition sponsored by the Department of Energy and General Motors EcoCAR by Georgia Tech engineering competition sponsored by the Department of Energy and General Motors #12;GT EcoCAR GOALS: Increase by the Department of Energy and General Motors EcoCAR by Georgia Tech efficiency through design and innovation

  19. INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State),

    E-Print Network [OSTI]

    Wang, Weichao

    INTRODUCTION TO SMART GRID Weichao Wang (UNCC), Yi Pan (Georgia State), Wenzhan Song (Georgia State) and Le Xie (Texas A&M) NSF SFS Project Team on "Integrated Learning Environment for Smart Grid Security" #12; Objective of National Power Grid Modernization Architecture of Smart Grid What is Smart Grid

  20. May 14-16, 2009 Young Harris College, Young Harris, Georgia

    E-Print Network [OSTI]

    Delaplane, Keith S.

    May 14-16, 2009 Young Harris College, Young Harris, Georgia Master Beekeeper levels: · Certified · Journeyman · Master · Master Craftsman Young Harris College and the University of Georgia are offering, candles, section comb honey, mead, and beekeeping gadgets. We urge students to participate

  1. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy ResourcesLoading map...(Utility Company) Jump to:City) Jump to:Newmarket, NewNewstead, NewGeorgia

  2. Echols County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address:011-DNA Jump37. It is classified asThis articleEastborough,Eaton,Echols County, Georgia:

  3. Upson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformation UC 19-6-401Upson County, Georgia: Energy Resources Jump to:

  4. Washington County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDS dataIndiana: EnergyWasco County,Washington County,Georgia:

  5. Wayne County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov PtyInformationSEDSWawarsing, New York: Energy Resources JumpGeorgia: Energy

  6. Butts County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais aBurkittsville,Bushyhead,Butts County, Georgia: Energy

  7. Georgia Recovery Act State Memo | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:Year in3.pdf Flash2006-53.pdf0.pdfCost SavingsEnergyDepartment ofGeneralFutureElectricGeorgia

  8. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperative Jump to:Westview, Florida:WheatleyWheeler,Georgia: Energy Resources Jump

  9. Wilkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:SeadovCooperative Jump to:Westview,GeothermalHawaii:Sage grouseWilkinson County, Georgia:

  10. Sandy Springs, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to: navigation, searchVirginiaRooseveltVI SolarisSandusky County, Ohio: EnergySandyGeorgia:

  11. DeKalb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision has beenFfe2fb55-352f-473b-a2dd-50ae8b27f0a6 No revision has been approved forDayton is aCounty, Georgia:

  12. Camden County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin: EnergyBoston Areais3:InformationCamden County, Georgia: Energy Resources

  13. City of Camilla, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy InformationLake SouthChromaIowaCamilla, Georgia (Utility Company)

  14. City of Cartersville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy InformationLake SouthChromaIowaCamilla, Georgia (UtilityCartersville,

  15. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (Utility Company)Livingston Place:Mansfield, Georgia (Utility

  16. City of Monticello, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgia (Utility Company) Jump to: navigation, search

  17. City of Palmetto, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy Nebraska (UtilityGeorgia (UtilityNewburgOrrville, OhioOxford,Palmetto

  18. City of Thomaston, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy NebraskaStanhope, Iowa (Utility Company)Thomaston Place: Georgia

  19. Clinch County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:EnergyWisconsin: Energy ResourcesInformation istypeClinch County, Georgia:

  20. Talbot County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump to: navigation,Open EnergyFacilityTEPCounty, Georgia: Energy

  1. Tift County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,Ltd Jump JumpAl., 1978) |Thrall,Tibagi EnergeticaTift County, Georgia:

  2. Turner County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia:FAQ < RAPID Jump to:Seadov Pty LtdSteen,LtdInformationTulsa, Oklahoma:EnergyTurner County, Georgia: Energy

  3. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched5 IndustrialIsadoreConnecticut Regions National Science2Gcreport BiologicalGeorgia

  4. GaN/AlGaN ultraviolet/infrared dual-band detector G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, and A. G. U. Pereraa

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Atlanta, Georgia 30303 S. G. Matsik NDP Optronics, Mableton, Georgia 30126 A. Asghar and I. T. Ferguson

  5. Ga nanoparticle-enhanced photoluminescence of GaAs

    SciTech Connect (OSTI)

    Kang, M.; Al-Heji, A. A.; Jeon, S.; Wu, J. H. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lee, J.-E.; Saucer, T. W.; Zhao, L.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States); Katzenstein, A. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Eckerd College, St. Petersburg, Florida 33711-4744 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-09-02T23:59:59.000Z

    We have examined the influence of surface Ga nanoparticles (NPs) on the enhancement of GaAs photoluminescence (PL) efficiency. We have utilized off-normal focused-ion-beam irradiation of GaAs surfaces to fabricate close-packed Ga NP arrays. The enhancement in PL efficiency is inversely proportional to the Ga NP diameter. The maximum PL enhancement occurs for the Ga NP diameter predicted to maximize the incident electromagnetic (EM) field enhancement. The PL enhancement is driven by the surface plasmon resonance (SPR)-induced enhancement of the incident EM field which overwhelms the SPR-induced suppression of the light emission.

  6. 1197 South Lumpkin Street Athens Georgia 30602-3603 weddings@georgiacenter.uga.edu 706.542.2654 The minimum charge For a dinner recePTion is $600.00.

    E-Print Network [OSTI]

    Arnold, Jonathan

    FFee. Dinner Receptions recePTion service inFormaTion All leftover food and beverages are the property.542.2654 The minimum charge For a dinner recePTion is $600.00. service For a maximum oF Two hours exTended service Time of the event. The number given at that time will be the minimum number charged. An 18% service charge and 7

  7. 1197 South Lumpkin Street Athens Georgia 30602-3603 weddings@georgiacenter.uga.edu 706.542.2654 each enTre includes a Beverage and your choice oF a desserT

    E-Print Network [OSTI]

    Arnold, Jonathan

    , Thousand Island, Basil Vinaigrette, Bleu Cheese, or Ranch Dressing. Served with Luncheon Rolls and Crackers Salad Dressings: Low-Calorie Italian, Honey-French, Vidalia Onion, Low-Fat Raspberry Vinaigrette Lettuce, Sliced Tomato, and Tangy Dressing. Served on Focaccia and Accompanied by Pasta Salad and a Dill

  8. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30T23:59:59.000Z

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  9. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  10. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01T23:59:59.000Z

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  11. GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering

    E-Print Network [OSTI]

    Li, Mo

    Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

  12. SAVANNAH HARBOR EXPANSION PROJECT CHATHAM COUNTY, GEORGIA AND JASPER COUNTY, SOUTH CAROLINA

    E-Print Network [OSTI]

    US Army Corps of Engineers

    SAVANNAH HARBOR EXPANSION PROJECT CHATHAM COUNTY, GEORGIA AND JASPER COUNTY, SOUTH CAROLINA 22 (Kings Island Turning Basin at Stations 98+500 to 100+500) 5 feet deeper (to an authorized navigation #12

  13. Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program

    E-Print Network [OSTI]

    Brown, M. L.; Moore, D. M.

    1988-01-01T23:59:59.000Z

    During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

  14. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12T23:59:59.000Z

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  15. An Evaluation of Georgia's Institutional Conservation Program Preliminary Report - June 1989

    E-Print Network [OSTI]

    Brown, M. L.; Downing, C.

    1989-01-01T23:59:59.000Z

    The Institutional Conservation Program (ICP) has been active in Georgia since 1980 and has distributed over $20 million in matching funds for conservation measures and energy studies. The purpose of the ICP is to reduce energy consumption in schools...

  16. Capacity and Energy Payments to Small Power Producers and Cogenerators Under PURPA Docket (Georgia)

    Broader source: Energy.gov [DOE]

    Docket No. 4822 was enacted by the Georgia Public Service Commission in accordance with The Public Utility Regulatory Policies Act of 1978 (PURPA) that was enacted to promote conservation and to...

  17. Sales Tax Exemption for Energy-Efficient Products (Sales Tax Holiday) (Georgia))

    Broader source: Energy.gov [DOE]

    Georgia allows an annual state and local sales tax exemption on Energy Star products of $1,500 or less per product, purchased for non-commercial home or personal use.The 100% exemption from the...

  18. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  19. Georgia Champions Energy Efficiency Savings: Weatherization Assistance Close-Up Fact Sheet

    SciTech Connect (OSTI)

    D& R International

    2001-10-10T23:59:59.000Z

    Georgia demonstrates its commitment to technology and efficiency through the Weatherization Program. Weatherization uses advanced technologies and techniques to reduce energy costs for low-income families by increasing the energy efficiency of their homes.

  20. Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site

    E-Print Network [OSTI]

    Baker, James Graham

    1982-01-01T23:59:59.000Z

    COMPUTERS AND NAUTICAL ARCHAEOLOGY: CHARACTERIZATION OF THE C. S. S. GEORGIA NRECK SITE A Thesis by JAMES GRAHAM BAKER Submitted to the Graduate College of Texas ASM University in partial fulfillment of the requirements for the degree... of MASTER OF ARTS December 19HZ Major Subject: Anthropology COMPUTERS IN NAUTICAL ARCHAEOLOGY: CHARACTERIZATION OF THE C. S. S, GEORGIA WRECK SITE A Thesis by JAMES GRAHAM BAKER Approved as to style and content by: Frederick H. van Doorninck, Jr...

  1. Georgia Institute of Technology chilled water system evaluation and master plan

    SciTech Connect (OSTI)

    NONE

    1996-05-15T23:59:59.000Z

    As the host of the Olympic Village for the 1996 Atlanta Olympics, Georgia Tech has experienced a surge in construction activities over the last three years. Over 1.3 million square feet of new buildings have been constructed on the Georgia Tech campus. This growth has placed a strain on the Georgia Tech community and challenged the facilities support staff charged with planning and organizing utility services. In concert with Olympic construction, utility planners have worked to ensure long term benefits for Georgia Tech facilities while meeting the short term requirements of the Olympic Games. The concentration of building construction in the northwest quadrant of the campus allowed planners to construct a satellite chilled water plant to serve the needs of this area and provide the opportunity to integrate this section of the campus with the main campus chilled water system. This assessment and master plan, funded in part by the US Department of Energy, has evaluated the chilled water infrastructure at Georgia Tech, identified ongoing problems and made recommendations for long term chilled water infrastructure development and efficiency improvements. The Georgia Tech office of Facilities and RDA Engineering, Inc. have worked together to assemble relevant information and prepare the recommendations contained in this document.

  2. Georgia Newspaper Coverage Discovering Conventional Practices of the 'Cherokee Question': Prelude to the Removal, 1828-1832.

    E-Print Network [OSTI]

    Hobgood, Jr., James Hollister

    2008-01-01T23:59:59.000Z

    ??This thesis analyzes the specific journalistic conventional practices of newspapers in Georgia as they focused on the “Cherokee Question” in 1828-1832, the critical period during… (more)

  3. GLYDE-II and Lignin: An XML markup language for representing lignin structures

    E-Print Network [OSTI]

    Miller, John A.

    in secondary plant cell walls are of particular interest for alternative fuel. However, another complex Miller2, Krys Kochut2, Will York1,3 1. Complex Carbohydrate Research Center. Athens, Georgia, 30605 2. University of Georgia. Athens, Georgia, 30601 Introduction GLYDE-II (GLYcan structural Data Exchange using

  4. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01T23:59:59.000Z

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  5. Coordinator of Operations The University of Georgia is seeking a qualified candidate to serve as the Coordinator of Operations with the

    E-Print Network [OSTI]

    Arnold, Jonathan

    with the University of Georgia. The Archway Partnership has received funding from the Board of Regents to continueCoordinator of Operations The University of Georgia is seeking a qualified candidate to serve to bring the University of Georgia's expertise to communities and to facilitate community interaction

  6. Investigation of the GaN-on-GaAs interface for vertical power device applications

    SciTech Connect (OSTI)

    Möreke, Janina, E-mail: janina.moereke@bristol.ac.uk; Uren, Michael J.; Kuball, Martin [H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Novikov, Sergei V.; Foxon, C. Thomas [Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom); Hosseini Vajargah, Shahrzad; Wallis, David J.; Humphreys, Colin J. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Haigh, Sarah J. [Super STEM Laboratory, STFC Daresbury Campus, Keckwick Lane, Daresbury WA4 4AD (United Kingdom); School of Materials, University of Manchester, Manchester M13 9PL (United Kingdom); Al-Khalidi, Abdullah; Wasige, Edward; Thayne, Iain [School of Engineering, University of Glasgow, Rankine Bldg, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-07-07T23:59:59.000Z

    GaN layers were grown onto (111) GaAs by molecular beam epitaxy. Minimal band offset between the conduction bands for GaN and GaAs materials has been suggested in the literature raising the possibility of using GaN-on-GaAs for vertical power device applications. I-V and C-V measurements of the GaN/GaAs heterostructures however yielded a rectifying junction, even when both sides of the junction were heavily doped with an n-type dopant. Transmission electron microscopy analysis further confirmed the challenge in creating a GaN/GaAs Ohmic interface by showing a large density of dislocations in the GaN layer and suggesting roughening of the GaN/GaAs interface due to etching of the GaAs by the nitrogen plasma, diffusion of nitrogen or melting of Ga into the GaAs substrate.

  7. Composition and Interface Analysis of InGaN/GaN Multiquantum...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Analysis of InGaNGaN Multiquantum-Wells on GaN Substrates Using Atom Probe Tomography. Composition and Interface Analysis of InGaNGaN Multiquantum-Wells on GaN...

  8. The University of Georgia is committed to principles of equal opportunity and affirmative action. 06/10-15391 BANQUET MENUS

    E-Print Network [OSTI]

    Arnold, Jonathan

    . The client will be billed for the total number prepared for. BanqueT Food service It is the policy banquet space within the Georgia Center must be furnished by Georgia Center Food Services. Below to assist you. Planning Timeline In order to provide you with excellent customer service, we must have your

  9. Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and Use of Data Policy Georgia Southern University Office of Career Services Eagle Career Net/NACElink Privacy and the NACElink Network to provide student with Eagle Career Net. Eagle Career Net is our online system

  10. FACULTY POSITION UNIVERSITY OF GEORGIA The Department of Poultry Science in the College of Agriculture and the Poultry

    E-Print Network [OSTI]

    Navara, Kristen

    FACULTY POSITION ­ UNIVERSITY OF GEORGIA The Department of Poultry Science in the College of Agriculture and the Poultry Diagnostic and Research Center in the Department of Population Health in the area of poultry health and production. Georgia is the leading poultry producing state in the US

  11. Observations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U.S.A.

    E-Print Network [OSTI]

    Licciardi, Joseph M.

    constructed treatment wetland in Augusta, Georgia were used to quantify the size, distribution, velocity). In treatment wetlands, such heterogeneity nearly always results in reduced contaminant removal (WoObservations of short-circuiting flow paths within a free-surface wetland in Augusta, Georgia, U

  12. Contracts & Grants Enjoy Athens!

    E-Print Network [OSTI]

    Kissinger, Jessica

    -award accounting functions; · maintenance of the University's Cost Accounting Standards Disclosure Statement (DS-2 of related campus policies, business processes, and operating procedures; and · sub-recipient monitoring Statement (DS-2) and related policies and procedures. The Director will lead in the effort to provide

  13. Design and performance of the Georgia Tech Aquatic Center photovoltaic system. Final report

    SciTech Connect (OSTI)

    Rohatgi, A.; Begovic, M.; Long, R.; Ropp, M.; Pregelj, A.

    1996-12-31T23:59:59.000Z

    A building-integrated DC PV array has been constructed on the Georgia Tech campus. The array is mounted on the roof of the Georgia Tech Aquatic Center (GTAC), site of the aquatic events during the 1996 Paralympic and Olympic Games in Atlanta. At the time of its construction, it was the world`s largest roof-mounted photovoltaic array, comprised of 2,856 modules and rates at 342 kW. This section describes the electrical and physical layout of the PV system, and the associated data acquisition system (DAS) which monitors the performance of the system and collects measurements of several important meteorological parameters.

  14. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets

    SciTech Connect (OSTI)

    Zech, E. S.; Chang, A. S.; Martin, A. J.; Canniff, J. C.; Millunchick, J. M. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Lin, Y. H. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)

    2013-08-19T23:59:59.000Z

    We have investigated the influence of GaAs surface termination on the nanoscale structure and band offsets of GaSb/GaAs quantum dots (QDs) grown by molecular-beam epitaxy. Transmission electron microscopy reveals both coherent and semi-coherent clusters, as well as misfit dislocations, independent of surface termination. Cross-sectional scanning tunneling microscopy and spectroscopy reveal clustered GaSb QDs with type I band offsets at the GaSb/GaAs interfaces. We discuss the relative influences of strain and QD clustering on the band offsets at GaSb/GaAs interfaces.

  15. BLACK POLITICAL THEOLOGY Spring 2010 // Georgia State University // Directed Reading Graduate Course

    E-Print Network [OSTI]

    Doyle, Robert

    BLACK POLITICAL THEOLOGY Spring 2010 // Georgia State University // Directed Reading Graduate in "political theology" in the humanities. The term comes from the German jurist Carl Schmitt who suggested in his book of that title that "all significant political concepts of the modern theory of the state

  16. Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia Institute of Technology

    E-Print Network [OSTI]

    California at Davis, University of

    Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia or organization) DOT - $92,292.15 Total Project Cost $92,292.15 Agency ID or Contract Number DTRT13-G-UTC29 Start and End Dates November 2013 - June 2015 Brief Description of Research Project Local governments are using

  17. e-mailed 07/22/2013 TO: Georgia Tech PCard Coordinators & Pcard holders

    E-Print Network [OSTI]

    Jacobs, Laurence J.

    : Business Services Subject: Policy Change for Food Purchases using the PCard Effective August 1, 2013, monthly bottled water service ­ use account 714350 (food/beverage off the shelf). 2. Caterer invoice less, Georgia Tech's policy exemption from Department of Administrative Services will no longer be in effect

  18. U.S. EPA State Carbon Emissions Goals Georgia Fact Sheet

    E-Print Network [OSTI]

    Das, Suman

    on economic cost and benefits estimates, a set of five very specific carbon abatement measures were selected. New renewable electrical energy sources, e.g., solar, wind, etc. 5. Reducing electric consumption Shelton, PhD Strategic Energy Institute Georgia Tech The U.S. EPA has published

  19. This article was downloaded by: [University of Georgia] On: 04 February 2014, At: 13:21

    E-Print Network [OSTI]

    Georgia, University of

    b a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA b Savannah River. Fletcherb and Andrew M. Grosseb,y a Savannah River National Laboratory, Savannah River Site, Aiken, SC 29808, USA; b Savannah River Ecology Laboratory, University of Georgia, Aiken, SC 29808, USA (Received 30

  20. Georgia researchers uncover new ways to meet America's alternative energy needs. By Kathy Brister

    E-Print Network [OSTI]

    Nair, Sankar

    -up companies. State economic developers attracted more than $3 billion in commercial green-energy projects over-edge" biofuel projects. Here's a look at some of the bioenergy innovations under way in Georgia, Tapping Timber bioenergy company Range Fuels plans to crank up what's being billed as the United States' first commercial

  1. An Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology

    E-Print Network [OSTI]

    electrodeposition through polymer molds. The nickel spark plugs are tested at 20 Hz using spark energies of 5 mAn Experimental Study of Microfabricated Nickel Spark Plug Georgia Institute of technology Atlanta presents experimental. results of the erosion and wear characteristics of micromachined nickel spark plugs

  2. Our History Steeped in history and tradition, the University of Georgia Hotel and Conference Center has

    E-Print Network [OSTI]

    Arnold, Jonathan

    ........................................................................................................ $4.95 Chopped salad tossed with eggs, cucumbers, tomatoes, and avocado ranch dressing. Topped witnessed "the dressing of the dog" in a Georgia jersey ­ a scene included in his book "Midnight.95 Crisp Green Beans battered and fried to golden perfection served with a cool side of Avocado Ranch

  3. Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates

    E-Print Network [OSTI]

    Carrington, Emily

    Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Tentative: Autumn Quarter 2014 Course Web Page: http://courses'll want to cover your eyes with safety glasses or wear glasses on dissection lab days. Goals My course

  4. Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Comparative Anatomy of Vertebrates

    E-Print Network [OSTI]

    Carrington, Emily

    Georgia O'Keeffe: Horse's Skull with Pink Rose, 1931 Syllabus Comparative Anatomy of Vertebrates Biology 453 Winter Quarter 2014 Course Web Page: http://courses.washington.edu/chordate/hmpg-biol453.html glasses on dissection lab days. Goals My course goals begin with learning the vocabulary of anatomy; you

  5. Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy

    E-Print Network [OSTI]

    Li, Mo

    Adopted Version 1 Georgia Tech's "BuzzPort" Portal Usage Policy v. 7.1 1.0 PURPOSE This Policy are highly valued and sensitive Institute resources. This Policy establishes an acceptable usage framework.0 SCOPE This Policy applies to all authorized BuzzPort usage from any location at all times

  6. Habitat for Humanity: La Grange, Georgia, 2003 Jimmy Carter Work Project

    SciTech Connect (OSTI)

    Not Available

    2005-06-01T23:59:59.000Z

    The Troup-Chambers Habitat for Humanity built a Habitat house to ENERGY STAR standards in LaGrange, Georgia, in 2003. The project was so successfully that all Troup-Chambers houses will now be built to ENERGY STAR standards.

  7. School of Architecture College of Architecture Georgia Institute of Technology M.S. IN URBAN DESIGN

    E-Print Network [OSTI]

    1 School of Architecture College of Architecture Georgia Institute of Technology M.S. IN URBAN and richly interdisciplinary experience, with required courses in urban design, architecture and city planning, with additional opportunities in civil and environmental engineering, real estate development

  8. The University of Georgia Job Search Strategies | Resume | Cover Letter | Interviewing | Social Media

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Job Search Strategies | Resume | Cover Letter | Interviewing | Social Fair 6 Reference/Recommendation Guidelines 7 Resume Guidelines 8 Sample Resumes 9-13 Power Verbs 14 a Major · Choosing a Career · Resumes · Cover Letters · Mock Interviews · The Job Search · Personal

  9. Video Personalization and Caching for Resource Constrained Environments

    E-Print Network [OSTI]

    Bhandarkar, Suchendra "Suchi" M.

    Video Personalization and Caching for Resource Constrained Environments Siddhartha Chattopadhyay Dept. of Computer Science, The University of Georgia, Athens, Georgia 30602-7404, USA Abstract: Video constrained, various video personalization strategies are used to provide personalized video content

  10. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01T23:59:59.000Z

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  11. Supplemental Guide for Seasonal High Water Table Indicators in Georgia's Onsite Wastewater Manual Section C: Flatwoods Region

    E-Print Network [OSTI]

    Ma, Lena

    1 Supplemental Guide for Seasonal High Water Table Indicators in Georgia's Onsite Wastewater Manual) are part of the Atlantic Coast Flatwoods that run along the eastern shore of the US. They fall within

  12. Characterisation of Ga-coated and Ga-brazed aluminium

    SciTech Connect (OSTI)

    Ferchaud, E. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Christien, F., E-mail: frederic.christien@univ-nantes.fr [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France); Barnier, V. [Ecole Nationale Superieure des Mines, MPI, CNRS UMR5146, Centre SMS, 158 Cours Fauriel, 42023 Saint Etienne (France); Paillard, P. [Universite de Nantes, Polytech'Nantes, Laboratoire Genie des Materiaux et Procedes Associes, Rue Christian Pauc, 44306 Nantes Cedex 3 (France)

    2012-05-15T23:59:59.000Z

    This work is devoted to the brazing of aluminium using liquid gallium. Gallium was deposited on aluminium samples at {approx} 50 Degree-Sign C using a liquid gallium 'polishing' technique. Brazing was undertaken for 30 min at 500 Degree-Sign C in air. EDS (Energy Dispersive X-ray Spectroscopy) and AES (Auger Electron Spectroscopy) characterisation of Ga-coated samples has shown that the Ga surface layer thickness is of ten (or a few tens of) nanometres. Furthermore, aluminium oxide layer (Al{sub 2}O{sub 3}) was shown to be 'descaled' during Ga deposition, which ensures good conditions for further brazing. Cross-section examination of Ga-coated samples shows that liquid gallium penetrates into the aluminium grain boundaries during deposition. The thickness of the grain boundary gallium film was measured using an original EDS technique and is found to be of a few tens of nanometres. The depth of gallium grain boundary penetration is about 300 {mu}m at the deposition temperature. The fracture stress of the brazed joints was measured from tensile tests and was determined to be 33 MPa. Cross-section examination of brazed joints shows that gallium has fully dissolved into the bulk and that the joint is really autogenous. - Highlights: Black-Right-Pointing-Pointer Aluminium can be brazed using liquid gallium deposited by a 'polishing' technique. Black-Right-Pointing-Pointer The aluminium oxide layer is 'descaled' during liquid Ga 'polishing' deposition. Black-Right-Pointing-Pointer EDS can be used for determination of surface and grain boundary Ga film thickness. Black-Right-Pointing-Pointer The surface and grain boundary Ga film thickness is of a few tens of nm. Black-Right-Pointing-Pointer Surface and grain boundary gallium dissolves in the bulk during brazing.

  13. AlGaAs emitter/GaAs barrier terahertz detector with a 2.3 THz threshold M. B. M. Rinzan and A. G. U. Pereraa

    E-Print Network [OSTI]

    Perera, A. G. Unil

    NDP Optronics LLC, 236 St. Martins Drive, Mableton, Georgia 30126 H. C. Liu, Z. R. Wasilewski, and M

  14. Hating the Bear? : Root Causes of Perceived anti-Russian Slant in Western News Coverage of the 2008 Russia-Georgia War

    E-Print Network [OSTI]

    Spivakovsky-Gonzalez, Pedro

    2011-01-01T23:59:59.000Z

    In Person Interview. Moscow, Russia. 27 March 2010. Harding,In Person Interview. Moscow, Russia. 25 March 2010.Group (Organization). Russia & Georgia: The Fallout. 22

  15. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel [National Institute of Physics, University of the Philippines Diliman, Quezon City 1101 (Philippines); Que, Christopher T. [Physics Department, De La Salle University, 2401 Taft Avenue, Manila 1004 (Philippines); Yamamoto, Kohji; Tani, Masahiko [Research Center for Development of Far-Infrared Region, University of Fukui, Fukui 910-8507 (Japan)

    2012-12-15T23:59:59.000Z

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  16. GA Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:GA-Solar

  17. Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells

    E-Print Network [OSTI]

    Atwater, Harry

    Plasmonic nanoparticle enhanced photocurrent in GaN/InGaN/GaN quantum well solar cells Imogen M of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA 2 Semiconductor Nanoscience Institute, California Institute of Technology, Pasadena, California 91125, USA Received 26

  18. Native point defects in GaSb

    SciTech Connect (OSTI)

    Kujala, J.; Segercrantz, N.; Tuomisto, F.; Slotte, J. [Department of Applied Physics, Aalto University School of Science, P.O. Box 14100, FI-00076 AALTO (Finland)

    2014-10-14T23:59:59.000Z

    We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.

  19. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01T23:59:59.000Z

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  20. Beta decay of Ga-62

    E-Print Network [OSTI]

    Hyman, BC; Iacob, VE; Azhari, A.; Gagliardi, Carl A.; Hardy, John C.; Mayes, VE; Neilson, RG; Sanchez-Vega, M.; Tang, X.; Trache, L.; Tribble, Robert E.

    2003-01-01T23:59:59.000Z

    from the ex- perimental ft value for a 01?01 b decay between analog states with the relation @3# 0556-2813/2003/68~1!/015501~6!/$20.00 68 015501- of 62Ga . Hardy, V. E. Mayes, R. G. Neilson, M. Sanchez-Vega, and R. E. Tribble y, College Station...

  1. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Kravchenko, Ivan I [ORNL

    2012-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) with three different types of buffer layers, including a GaN/AlGaN composite layer, or 1 or 2 lm GaN thick layers, were fabricated and their reliability compared. The HEMTs with the thick GaN buffer layer showed the lowest critical voltage (Vcri) during off-state drain step-stress, but this was increased by around 50% and 100% for devices with the composite AlGaN/GaN buffer layers or thinner GaN buffers, respectively. The Voff - state for HEMTs with thin GaN and composite buffers were 100 V, however, this degraded to 50 60V for devices with thick GaN buffers due to the difference in peak electric field near the gate edge. A similar trend was observed in the isolation breakdown voltage measurements, with the highest Viso achieved based on thin GaN or composite buffer designs (600 700 V), while a much smaller Viso of 200V was measured on HEMTs with the thick GaN buffer layers. These results demonstrate the strong influence of buffer structure and defect density on AlGaN/GaN HEMT performance and reliability.

  2. SUPPORTED BY THE UGA OFFICE OF THE VICE PRESIDENT FOR INSTRUCTION OVPI.UGA.EDU The University of Georgia hosts the

    E-Print Network [OSTI]

    Arnold, Jonathan

    , the Assessment Institute and Advising Research Seminar. She co-authored two articles in Academic advising: New NACADA Georgia Drive-in Conference The University of Georgia Academic Advising Coordinating Council #12 to undergraduate education, student success and retention, academic advising, curriculum and policy development

  3. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    in the prices paid for energy in recent years. In the last 10 years electrical costs have ranged from $0.07 per costs associated with the live production of broilers on farms in Georgia and the United States. HeatingPUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U

  4. Pre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and

    E-Print Network [OSTI]

    Hutcheon, James M.

    School of Forest Resources to complete a Bachelor of Science in Forest Resources (BSFR). A limited numberPre-Natural Resources (Two-year) Transfer Program Georgia Southern University, in cooperation with the Warnell School of Forestry and Natural Resources, University of Georgia, offers a joint program of study

  5. Lessons Learned from the Decommissioning of Nuclear Facilities and the Safe Termination of Nuclear Activities. Outcomes of the International Conference, 11-15 December 2006, Athens, Greece

    SciTech Connect (OSTI)

    Batandjieva, B.; Laraia, M. [International Atomic Energy Agency, Vienna (Austria)

    2008-01-15T23:59:59.000Z

    Full text of publication follows: decommissioning activities are increasing worldwide covering wide range of facilities - from nuclear power plant, through fuel cycle facilities to small laboratories. The importance of these activities is growing with the recognition of the need for ensuring safe termination of practices and reuse of sites for various purposes, including the development of new nuclear facilities. Decommissioning has been undertaken for more than forty years and significant knowledge has been accumulated and lessons have been learned. However the number of countries encountering decommissioning for the first time is increasing with the end of the lifetime of the facilities around the world, in particular in countries with small nuclear programmes (e.g. one research reactor) and limited human and financial resources. In order to facilitate the exchange of lessons learned and good practices between all Member States and to facilitate and improve safety of the planned, ongoing and future decommissioning projects, the IAEA in cooperation with the Nuclear Energy Agency to OECD, European Commission and World Nuclear Association organised the international conference on Lessons Learned from the Decommissioning of Nuclear Facilities and the Safe Termination of Nuclear Activities, held in Athens, Greece. The conference also highlighted areas where future cooperation at national and international level is required in order to improve decommissioning planning and safety during decommissioning and to facilitate decommissioning by selecting appropriate strategies and technologies for decontamination, dismantling and management of waste. These and other aspects discussed at the conference are presented in this paper, together with the planned IAEA measures for amendment and implementation of the International Action Plan on Decommissioning of Nuclear Facilities and its future programme on decommissioning.

  6. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  7. Ultra-Thin, Triple-Bandgap GaInP/GaAs/GaInAs Monolithic Tandem Solar Cells

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2007-02-01T23:59:59.000Z

    The performance of state-of-the-art, series-connected, lattice-matched (LM), triple-junction (TJ), III-V tandem solar cells could be improved substantially (10-12%) by replacing the Ge bottom subcell with a subcell having a bandgap of {approx}1 eV. For the last several years, research has been conducted by a number of organizations to develop {approx}1-eV, LM GaInAsN to provide such a subcell, but, so far, the approach has proven unsuccessful. Thus, the need for a high-performance, monolithically integrable, 1-eV subcell for TJ tandems has remained. In this paper, we present a new TJ tandem cell design that addresses the above-mentioned problem. Our approach involves inverted epitaxial growth to allow the monolithic integration of a lattice-mismatched (LMM) {approx}1-eV GaInAs/GaInP double-heterostructure (DH) bottom subcell with LM GaAs (middle) and GaInP (top) upper subcells. A transparent GaInP compositionally graded layer facilitates the integration of the LM and LMM components. Handle-mounted, ultra-thin device fabrication is a natural consequence of the inverted-structure approach, which results in a number of advantages, including robustness, potential low cost, improved thermal management, incorporation of back-surface reflectors, and possible reclamation/reuse of the parent crystalline substrate for further cost reduction. Our initial work has concerned GaInP/GaAs/GaInAs tandem cells grown on GaAs substrates. In this case, the 1-eV GaInAs experiences 2.2% compressive LMM with respect to the substrate. Specially designed GaInP graded layers are used to produce 1-eV subcells with performance parameters nearly equaling those of LM devices with the same bandgap (e.g., LM, 1-eV GaInAsP grown on InP). Previously, we reported preliminary ultra-thin tandem devices (0.237 cm{sup 2}) with NREL-confirmed efficiencies of 31.3% (global spectrum, one sun) (1), 29.7% (AM0 spectrum, one sun) (2), and 37.9% (low-AOD direct spectrum, 10.1 suns) (3), all at 25 C. Here, we include recent results of testing similar devices under the concentrated AMO spectrum, and also present the first demonstration of a high-efficiency, ultra-thin GaInP/GaAs/GaInAs tandem cell processed on a flexible kapton handle.

  8. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01T23:59:59.000Z

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  9. Siemens Pittsburgh, PA Novelis Corporation Atlanta, GA

    E-Print Network [OSTI]

    McGaughey, Alan

    Industrial Design ­ Shanghai, China Eaton Corporation ­ Pittsburgh, PA CMU, CTTEC ­ PittsburghSiemens ­ Pittsburgh, PA Novelis Corporation ­ Atlanta, GA Expense

  10. QUICK FACTS The University of Georgia Gwinnett Campus seeks to be a highly accessible and vibrant center

    E-Print Network [OSTI]

    Arnold, Jonathan

    Master's Degrees FY10 1,213 142 4 Educational Specialist Degrees FY11 1,316 254 3 Doctoral Programs FY UGA Center for Continuing Education Age range: 22-60 Certificate Programs Average # of hours enrolled and northeast Georgia by: Increasing access to graduate degree programs, post-baccalaureate certificates

  11. Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication (LMC), which provides diverse

    E-Print Network [OSTI]

    Li, Mo

    Digital Media Tenure Track Position Georgia Tech's School of Literature, Media, and Communication Digital Media tenure track position at the rank of Assistant Professor, beginning in the fall of 2013. We's Computational Media and Digital Media programs. A Ph.D. in an appropriate field is required (e.g. digital media

  12. Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia

    E-Print Network [OSTI]

    Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia Tech campus. The mission of the department is to maintain a beautiful and parking lots as per schedule. · Operate and maintain Calsense Irrigation Systems to water landscape

  13. Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia

    E-Print Network [OSTI]

    Landscape Services Department Landscape Services Department is responsible for the maintenance of grounds and landscape of Georgia Tech's 426 acre campus. The mission of the department is to maintain landscape and Couch Park. · Install and maintain traffic signs, crosswalks, street signs, etc. · Plant

  14. Prioritizing Areas of the Conasauga River Sub-basin in Georgia and Tennessee for Preservation and Restoration

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    controversial (Simon et al., 2007). Here we define restoration to mean direct modification of stream channels. Because both land preservation and stream restoration are expensive tools, there is a general public and Restoration SETH J. WENGER1,*, MEGAN M. HAGLER2, AND BYRON J. FREEMAN3 1University of Georgia River Basin

  15. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  16. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  17. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01T23:59:59.000Z

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  18. Results of a baseflow tritium survey of surface water in Georgia across from the Savannah River Site

    SciTech Connect (OSTI)

    Nichols, R.L.

    1993-03-03T23:59:59.000Z

    In October 1991 the Georgia Department of Natural Resources (GDNR) issued a press release notifying the public that tritium had been measured in elevated levels (1,200 - 1,500 pCi/1) in water samples collected from drinking water wells in Georgia across from the Savannah River Site in Aiken Co. South Carolina. None of the elevated results were above the Primary Drinking Water Standard for tritium of 20,000 pCi/l. The GDNR initiated 2 surveys to determine the source and extent of elevated tritium: (1) baseflow survey of surface water quality, and (2) well evaluation program. Results from the 2 surveys indicate that the tritium measured in groundwater wells in Georgia is not the result of a groundwater flow from South Carolina under the Savannah River and into Georgia. Atmospheric transport and consequent rainout and infiltration has resulted in an increase of tritium in the water-table aquifer in the vicinity. Water samples collected from drinking water wells believed to have been installed in the aquifer beneath the water-table aquifer were actually from the shallower water-table aquifer. Water samples collected from the wells contain the amount of tritium expected for the water-table aquifer in the sample area. The measured tritium levels in the well samples and baseflow samples do not exceed Primary Drinking Water Standards. Tritium levels in the water-table in Georgia will decline as the atmospheric releases from SRS decline, tritium undergoes natural decay, and infiltration water with less tritium flushes through the subsurface.

  19. FUPWG Meeting Agenda - Atlanta, GA | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Atlanta, GA FUPWG Meeting Agenda - Atlanta, GA Energy on My Mind FUPWG Atlanta, GA May 3-4, 2006 Hosted by: AGL Resources Logo May 3-4, 2006 Hosted by AGL Resources Atlanta,...

  20. TEM Characterization of InAs/GaAs Quantum Dots Capped by a GaSb/GaAs Layer

    SciTech Connect (OSTI)

    Beltran, AM [Universidad de Cadiz, Spain; Ben, Teresa [Universidad de Cadiz, Spain; Sanchez, AM [Universidad de Cadiz, Spain; Sales Lerida, David [ORNL; Chisholm, Matthew F [ORNL; Varela del Arco, Maria [ORNL; Pennycook, Stephen J [ORNL; Galindo, Pedro [Universidad de Cadiz, Spain; Ripalda, JM [Instituto de Microelectronica de Madrid (CNM, CSIC); Molina Rubio, Sergio I [ORNL

    2008-01-01T23:59:59.000Z

    It is well known that there is intense interest in expanding the usable wavelength for electronic devices. This is one of the reasons to study new self-assembled semiconductor nanostructures. Telecommunication applications use InGaAsP/InP emitting at 1.3 and 1.55 m. Research efforts are dedicated to develop GaAs technology in order to achieve emission at the same range as InP, so GaAs could be used for optical fibre communications. Ga(As)Sb on InAs/GaAs quantum dots (QDs) is a promising nanostructure to be used in telecommunications. The introduction of antimony during or after the QDs growth is an effective solution to obtain a red shift in the emission wavelength, even at room temperature.

  1. Violet to deep-ultraviolet InGaN/GaN and GaN/AlGaN quantum structures for UV electroabsorption modulators

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    focused on the demonstration of ultraviolet UV optoelectronic devices. Such devices hold promise, material related problems complicate the growth of such optoelectronic devices oper- ating at short wavelengths. With the use of InGaN/GaN quantum structures, optoelectronic devices operating in vis- ible

  2. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    of operation of the AFO. CNMPs for permitted AFOs require assessment of risks related to phosphorous application. In Georgia, the use of a P-Index will be used to assess site-specific risks for phosphorous

  3. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Gotschke, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Stoica, T. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Calarco, R. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany); Sutter, E. [Brookhaven National Lab., Upton, NY (United States); Ciston, J. [Brookhaven National Lab., Upton, NY (United States); Cusco, R. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Artus, L. [Consell Superior d'Investigacions Cientifiques (CSIC), Barcelona (Spain); Kremling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Hofling, S. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Worschech, L. [Univ. Wurzburg, Wilhelm Conrad Rontgen Research Centre Complex Matter Systems, Wurzburg (Germany); Grutzmacher, D. [Institute of Bio- and Nanosystems (IBN-1), Research Centre Jülich GmbH and JARA-FIT Fundamentals of Future Information Technology (Germany)

    2011-01-07T23:59:59.000Z

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  4. Enrichment of trace elements in rare-metal bearing pegmatites of the muscovite class: Examples from the Jasper, Thomaston-Barnesville, Troup and Cherokee-Pickens districts in Georgia

    SciTech Connect (OSTI)

    Cocker, M.D. (Georgia Geologic Survey, Atlanta, GA (United States))

    1992-01-01T23:59:59.000Z

    Pegmatites from four important mining districts in Georgia: the Cherokee-Pickens district (mica and beryl), the Thomaston-Barnesville (mica), Troup (beryl), and Jasper County (feldspar) districts, generally contain quartz, muscovite, K-feldspar and oligoclase and can be included in the muscovite class of pegmatites. No source intrusions are known for any of these pegmatite districts. The Thomaston-Barnesville district covers about 2,000 km[sup 2] compared to the < 100 km[sup 2] of the other three districts and includes 3--4 times as many pegmatites as each of the other districts. The more highly fractionated pegmatites represent 42 to 48 % of the total number of pegmatites sampled in each district except for the Thomaston-Barnesville district in which only 7 % are more highly fractionated. Muscovites from the more highly fractionated pegmatites in these districts contain mean trace element values of 1,118--1,732 ppm Rb, 1,867--3,083 ppm F, 91--278 ppm Li, 7.7-31 ppm Be, 122--147 ppm Ga, 122--315 ppm Nb, and 137--254 ppm Zn. These pegmatites have mean Ba/Rb and Rb/K[sub 2]O ratios of 0.01--0.21 and 129--177 ppm. Mean Ba is 19--234 ppm. Mean trace element values of muscovites from the least fractionated pegmatites are 381--675 ppm Rb, 748--1,622 ppm F, 33--221 ppm Li, 4:8--20.6 ppm Be, 56--80 ppm Ga, 32--152 ppm Nb, and 59--113 ppm Zn. These pegmatites have mean Ba/Rb and Rb/K[sub 2]O ratios of 0.44--2.83 and 39--76. Mean Ba is 218--857 ppm. In each district, the more highly fractionated pegmatites contain beryl or are in the vicinity of beryl-bearing pegmatites.

  5. Georgia Waste Control Law (Georgia)

    Broader source: Energy.gov [DOE]

    The Waste Control Law makes it unlawful to dump waste in any lakes, streams or surfaces waters of the State or on any private property without consent of the property owner. Waste is very broadly...

  6. E-Print Network 3.0 - area glare sources Sample Search Results

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ...2 C. Cherokee County, Georgia's Outdoor Lighting and Road Glare Ordinance... County, Ga., Outdoor...

  7. Ohmic contacts to n-GaSb

    E-Print Network [OSTI]

    Yang, Zhengchong

    2012-06-07T23:59:59.000Z

    in the semiconductor is measured during the deposition of the metal contact. In using method 1, the I-V characteristics is plotted. The thermionic emission theory predicts the current-voltage characteristics of Schottky diodes as [13]: J(rhcrmionic) = A" T' exp... of different work functions. This situation is also true for metal contacts to n-GaSb. Polyakov et al. [14] examined the Schottky diodes of Al, Au, In, Pd, Ga, and Sb on Te doped n-GaSb. They used the C-V measurements methods. They reported that barrier...

  8. Dependence of the ground-state transition energy versus optical pumping in GaAsSb/InGaAs/GaAs heterostructures

    SciTech Connect (OSTI)

    Morozov, S. V.; Kryzhkov, D. I., E-mail: krizh@ipmras.ru; Aleshkin, V. Ya. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation); Yablonsky, A. N.; Krasilnik, Z. F. [Institute for Physics of Microstructures, RAS, 603950 Nizhny Novgorod (Russian Federation); Zvonkov, B. N.; Vikhrova, O. V. [Physical-Technical Research Institute, Lobachevsky State University of Nizhny Novgorod, 603950 Nizhny Novgorod (Russian Federation)

    2014-01-13T23:59:59.000Z

    In this work, we report on the time-resolved photoluminescence studies of a double quantum well In{sub 0.2}Ga{sub 0.8}As/GaAs{sub 0.8}Sb{sub 0.2}/GaAs heterostructure which, in contrast to the GaAsSb/GaAs structures, is expected to provide effective confinement of electrons due to additional InGaAs layer. The studies at 4.2?K have revealed a complicated nonmonotonic dependence of the ground-state transition energy on the concentration of nonequilibrium charge carriers in the quantum well. The effect observed in this work is important in terms of creating sources of radiation, including stimulated emission, on the basis of InGaAs/GaAsSb/GaAs structures.

  9. Highly uniform, multi-stacked InGaAs/GaAs quantum dots embedded in a GaAs nanowire

    SciTech Connect (OSTI)

    Tatebayashi, J., E-mail: tatebaya@iis.u-tokyo.ac.jp; Ota, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Ishida, S.; Nishioka, M.; Iwamoto, S.; Arakawa, Y. [NanoQUINE, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan); Institute of Industrial Science, The University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-08T23:59:59.000Z

    We demonstrate a highly uniform, dense stack of In{sub 0.22}Ga{sub 0.78}As/GaAs quantum dot (QD) structures in a single GaAs nanowire (NW). The size (and hence emission energy) of individual QD is tuned by careful control of the growth conditions based on a diffusion model of morphological evolution of NWs and optical characterization. By carefully tailoring the emission energies of individual QD, dot-to-dot inhomogeneous broadening of QD stacks in a single NW can be as narrow as 9.3?meV. This method provides huge advantages over traditional QD stack using a strain-induced Stranski-Krastanow growth scheme. We show that it is possible to fabricate up to 200 uniform QDs in single GaAs NWs using this growth technique without degradation of the photoluminescence intensity.

  10. Synthesis, morphology and optical properties of GaN and AlGaN semiconductor nanostructures

    SciTech Connect (OSTI)

    Kuppulingam, B., E-mail: drbaskar2009@gmail.com; Singh, Shubra, E-mail: drbaskar2009@gmail.com; Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai-600025 (India)

    2014-04-24T23:59:59.000Z

    Hexagonal Gallium Nitride (GaN) and Aluminum Gallium Nitride (AlGaN) nanoparticles were synthesized by sol-gel method using Ethylene Diamine Tetra Acetic acid (EDTA) complex route. Powder X-ray diffraction (PXRD) analysis confirms the hexagonal wurtzite structure of GaN and Al{sub 0.25}Ga{sub 0.75}N nanoparticles. Surface morphology and elemental analysis were carried out by Scanning Electron Microscope (SEM) and Energy Dispersive X-ray spectroscopy (EDX). The room temperature Photoluminescence (PL) study shows the near band edge emission for GaN at 3.35 eV and at 3.59 eV for AlGaN nanoparticles. The Aluminum (Al) composition of 20% has been obtained from PL emission around 345 nm.

  11. Multi-bands photoconductive response in AlGaN/GaN multiple quantum wells

    SciTech Connect (OSTI)

    Chen, G.; Rong, X.; Xu, F. J.; Tang, N. [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Wang, X. Q., E-mail: wangshi@pku.edu.cn; Shen, B., E-mail: bshen@pku.edu.cn [State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China); Fu, K.; Zhang, B. S. [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou (China); Hashimoto, H.; Yoshikawa, A. [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Ge, W. K. [Department of Physics, Tsinghua University, Beijing 100871 (China)

    2014-04-28T23:59:59.000Z

    Based on the optical transitions among the quantum-confined electronic states in the conduction band, we have fabricated multi-bands AlGaN/GaN quantum well infrared photodetectors. Crack-free AlGaN/GaN multiple quantum wells (MQWs) with atomically sharp interfaces have been achieved by inserting an AlN interlayer, which releases most of the tensile strain in the MQWs grown on the GaN underlayer. With significant reduction of dark current by using thick AlGaN barriers, photoconductive responses are demonstrated due to intersubband transition in multiple regions with center wavelengths of 1.3, 2.3, and 4??m, which shows potential applications on near infrared detection.

  12. Simplified 2DEG carrier concentration model for composite barrier AlGaN/GaN HEMT

    SciTech Connect (OSTI)

    Das, Palash, E-mail: d.palash@gmail.com; Biswas, Dhrubes, E-mail: d.palash@gmail.com [Indian Institute of Technology Kharagpur, Kharagpur - 721302, West Bengal (India)

    2014-04-24T23:59:59.000Z

    The self consistent solution of Schrodinger and Poisson equations is used along with the total charge depletion model and applied with a novel approach of composite AlGaN barrier based HEMT heterostructure. The solution leaded to a completely new analytical model for Fermi energy level vs. 2DEG carrier concentration. This was eventually used to demonstrate a new analytical model for the temperature dependent 2DEG carrier concentration in AlGaN/GaN HEMT.

  13. Georgia Tech offers an NIH graduate training program for the rational design of integrative biomaterials (GTBioMAT). This interdisciplinary program will train the next generation of predoctoral students in the inter-disciplinary field of

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech offers an NIH graduate training program for the rational design of integrative information. NIH INTERDISCIPLINARY TRAINING PROGRAM IN BIOMATERIALS Graduate Training for Rationally Designed

  14. Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.

    E-Print Network [OSTI]

    Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper CelluloseHemicelluloseLigninResource Cracking and Refining of Polysaccharides Bio-Diesel Substitutes

  15. Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface

    E-Print Network [OSTI]

    Katsumoto, Shingo

    in condensed matters. Two-dimensional electron gas (2DEG) at the GaAs/AlGaAs hetero-interface o ersThesis Electron Transport in a Two-Dimensional Electron Gas at GaAs/AlGaAs Heterointerface under of the art samples, the mean free path of electrons exceeds 10;4 m at low temperature. The achievement

  16. InAsGaPInGaP high-temperature power Schottky rectifier and J. M. Woodall

    E-Print Network [OSTI]

    Woodall, Jerry M.

    °C. Further improvement of the thermal stability is expected to be achieved by reducing the diffusion is thought to be due to strong covalent bonding at the InAs/GaP interface. The InAs/GaP heterointerface effectively blocks impurity diffusion. Since InGaP is superior to GaP for high-power applica- tions, as shown

  17. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  18. 2011 Planning Committee Roster 15thAnnualGeorgiaTechFaultandDisturbanceAnalysisConference

    E-Print Network [OSTI]

    Bennett, Gisele

    Tucker GA 30084-5336 770-270-7737 (phone) 404-226-7803 (cell) marlin.browning@gatrans.com Phillip L.m@gatech.edu Tony Napikoski United Illuminating 6 Armstrong Road Shelton, CT 06484 203-926-4618 (phone) 203

  19. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  20. Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

    SciTech Connect (OSTI)

    Kauko, H.; Helvoort, A. T. J. van, E-mail: a.helvoort@ntnu.no [Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim (Norway); Fimland, B. O.; Munshi, A. M. [Department of Electronics and Telecommunications, NTNU, Trondheim (Norway); Grieb, T.; Müller, K.; Rosenauer, A. [Institut für Festkörperphysik, Universität Bremen, Bremen (Germany)

    2014-10-14T23:59:59.000Z

    The near-surface reduction of the Sb mole fraction during the growth of GaAsSb nanowires (NWs) and GaAs NWs with GaAsSb inserts has been studied using quantitative high-angle annular dark field scanning transmission electron microscopy (STEM). A model for diffusion of Sb in the hexagonal NWs was developed and employed in combination with the quantitative STEM analysis. GaAsSb NWs grown by Ga-assisted molecular beam epitaxy (MBE) and GaAs/GaAsSb NWs grown by Ga- and Au-assisted MBE were investigated. At the high temperatures employed in the NW growth, As-Sb exchange at and outward diffusion of Sb towards the surface take place, resulting in reduction of the Sb concentration at and near the surface in the GaAsSb NWs and the GaAsSb inserts. In GaAsSb NWs, an increasing near-surface depletion of Sb was observed towards the bottom of the NW due to longer exposure to the As beam flux. In GaAsSb inserts, an increasing change in the Sb concentration profile was observed with increasing post-insert axial GaAs growth time, resulting from a combined effect of radial GaAs overgrowth and diffusion of Sb. The effect of growth temperature on the diffusion of Sb in the GaAsSb inserts was identified. The consequences of these findings for growth optimization and the optoelectronic properties of GaAsSb are discussed.

  1. Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

    SciTech Connect (OSTI)

    Wang, Y.D.; Zang, K.Y.; Chua, S.J.; Tripathy, S.; Chen, P.; Fonstad, C.G. [Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore 117576 (Singapore) and Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602 (Singapore); Department of Electrical and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2005-12-19T23:59:59.000Z

    We report the growth of high-quality GaN epilayers on an ordered nanoporous GaN template by metalorganic chemical vapor deposition. The nanopores in GaN template were created by inductively coupled plasma etching using anodic aluminum oxide film as an etch mask. The average pore diameter and interpore distance is about 65 and 110 nm, respectively. Subsequent overgrowth of GaN first begins at the GaN crystallite surface between the pores, and then air-bridge-mediated lateral overgrowth leads to the formation of the continuous layer. Microphotoluminescence and micro-Raman measurements show improved optical properties and significant strain relaxation in the overgrown layer when compared to GaN layer of same thickness simultaneously grown on sapphire without any template. Similar to conventional epitaxial lateral overgrown GaN, such overgrown GaN on a nanopatterned surface would also serve as a template for the growth of ultraviolet-visible light-emitting III-nitride devices.

  2. REGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based

    E-Print Network [OSTI]

    Chow, Lee

    the metal oxide varistor (MOV) and resistor (R) in a state-of-the-art surge protection circuit), metal oxide varistor (MOV), and transient voltage suppressor (TVS) diodes are the state-of-the- artREGULAR PAPER Improvement of Surge Protection by Using an AlGaN/GaN-Based Metal­Semiconductor­Metal

  3. Community Energy Systems and the Law of Public Utilities. Volume Twelve. Georgia

    SciTech Connect (OSTI)

    Feurer, D A; Weaver, C L

    1981-01-01T23:59:59.000Z

    A detailed description of the laws and programs of the State of Georgia governing the regulation of public energy utilities, the siting of energy generating and transmission facilities, the municipal franchising of public energy utilities, and the prescription of rates to be charged by utilities including attendant problems of cost allocations, rate base and operating expense determinations, and rate of return allowances. These laws and programs are analyzed to identify impediments which they may present to the implementation of Integrated Community Energy Systems (ICES). This report is one of fifty-one separate volumes which describe such regulatory programs at the Federal level and in each state as background to the report entitled Community Energy Systems and the Law of Public Utilities - Volume One: An Overview. This report also contains a summary of a strategy described in Volume One - An Overview for overcoming these impediments by working within the existing regulatory framework and by making changes in the regulatory programs to enhance the likelihood of ICES implementation.

  4. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  5. Lattice-matched epitaxial GaInAsSb/GaSb thermophotovoltaic devices

    SciTech Connect (OSTI)

    Wang, C.A.; Choi, H.K.; Turner, G.W.; Spears, D.L.; Manfra, M.J. [Massachusetts Inst. of Tech., Lexington, MA (United States). Lincoln Lab.; Charache, G.W. [Lockheed Martin, Inc., Schenectady, NY (United States)

    1997-05-01T23:59:59.000Z

    The materials development of Ga{sub 1{minus}x}In{sub x}As{sub y}Sb{sub 1{minus}y} alloys for lattice-matched thermophotovoltaic (TPV) devices is reported. Epilayers with cutoff wavelength 2--2.4 {micro}m at room temperature and lattice-matched to GaSb substrates were grown by both low-pressure organometallic vapor phase epitaxy and molecular beam epitaxy. These layers exhibit high optical and structural quality. For demonstrating lattice-matched thermophotovoltaic devices, p- and n-type doping studies were performed. Several TPV device structures were investigated, with variations in the base/emitter thicknesses and the incorporation of a high bandgap GaSb or AlGaAsSb window layer. Significant improvement in the external quantum efficiency is observed for devices with an AlGaAsSb window layer compared to those without one.

  6. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D{sub 0}?=?0.53(×2.1±1) cm{sup 2} s{sup ?1} that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  7. Study and development of tunable, single mode AlGaAs/GaAs lasers

    SciTech Connect (OSTI)

    Yu, P.K.L.; Liu, J.C. (California Univ., San Diego, La Jolla, CA (USA). Dept. of Electrical and Computer Engineering)

    1990-09-01T23:59:59.000Z

    Liquid phase epitaxy has been employed in this study to fabricate two-section wavelength tunable lasers. GaAs/AlGaAs and In GaAsP/InP material system have been used for fabricating the lasers. Both direct (butt) coupling and evanescent coupling approaches have been studied. The complications associated with the regrowth process have been responsible for poor laser performance. Some DBR gratings for three-section lasers have been made using the electron beam lithography at UCSD. A simple set up has been tested to measure the wavelength shift of GaAs/AlGaAs lasers. Also, a simple structure which avoids the regrowth process has been proposed for the two-section laser. 9 refs., 14 figs.

  8. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02T23:59:59.000Z

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  9. Quantum confinement in GaP nanoclusters

    SciTech Connect (OSTI)

    Laurich, B.K.; Smith, D.C.; Healy, M.D.

    1994-06-01T23:59:59.000Z

    We have prepared GaP and GaAs nanoclusters from organometallic condensation reactions of E[Si(ChH{sub 3})3]3 (E = P, As) and GaCl{sub 3}. The size of the as synthesized clusters is 10 {Angstrom} to 15 {Angstrom}. Larger clusters of 20 {Angstrom} to 30 {Angstrom} size were obtained by thermal annealing of the as grown material. X-ray diffraction and transmission electron microscopy confirm the high crystalline quality. A lattice contraction of 6.7% could be seen for 10 {Angstrom} sized GaAs clusters. The clusters are nearly spherical in shape. Optical absorption spectra show a distinct line which can be assigned to the fundamental transition of the quantum confined electronic state. The measured blue shift, with respect to the GaP bulk absorption edge is 0.53 eV. As the cluster is smaller than the exciton radius, we can calculate the cluster size from this blue shift and obtain 20.2 {Angstrom}, consistent with the results from X-ray diffraction of 19.5 {Angstrom} for the same sample.

  10. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V{sub Ga}. The neutral AsGa-related defects were measured by infrared absorption at 1{mu}m. Gallium vacancies, V{sub Ga}, was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10{sup 19} cm{sup {minus}3} Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As{sub Ga} in the layer. As As{sub Ga} increases, photoquenchable As{sub Ga} decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As{sub Ga} content around 500C, similar to irradiation damaged and plastically deformed Ga{sub As}, as opposed to bulk grown GaAs in which As{sub Ga}-related defects are stable up to 1100C. The lower temperature defect removal is due to V{sub Ga} enhanced diffusion of As{sub Ga} to As precipitates. The supersaturated V{sub GA} and also decreases during annealing. Annealing kinetics for As{sub Ga}-related defects gives 2.0 {plus_minus} 0.3 eV and 1.5 {plus_minus} 0.3 eV migration enthalpies for the As{sub Ga} and V{sub Ga}. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As{sub Ga}-related defects anneal with an activation energy of 1.1 {plus_minus} 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As{sub Ga}-Be{sub Ga} pairs. Si donors can only be partially activated.

  11. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01T23:59:59.000Z

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  12. Carrier capture dynamics of single InGaAs/GaAs quantum-dot layers

    SciTech Connect (OSTI)

    Chauhan, K. N.; Riffe, D. M.; Everett, E. A.; Kim, D. J.; Yang, H. [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States)] [Physics Department, Utah State University, Logan, Utah 84322-4415 (United States); Shen, F. K. [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)] [Center for Surface Analysis and Applications, Utah State University, Logan, Utah 84322-4415 (United States)

    2013-05-28T23:59:59.000Z

    Using 800 nm, 25-fs pulses from a mode locked Ti:Al{sub 2}O{sub 3} laser, we have measured the ultrafast optical reflectivity of MBE-grown, single-layer In{sub 0.4}Ga{sub 0.6}As/GaAs quantum-dot (QD) samples. The QDs are formed via two-stage Stranski-Krastanov growth: following initial InGaAs deposition at a relatively low temperature, self assembly of the QDs occurs during a subsequent higher temperature anneal. The capture times for free carriers excited in the surrounding GaAs (barrier layer) are as short as 140 fs, indicating capture efficiencies for the InGaAs quantum layer approaching 1. The capture rates are positively correlated with initial InGaAs thickness and annealing temperature. With increasing excited carrier density, the capture rate decreases; this slowing of the dynamics is attributed to Pauli state blocking within the InGaAs quantum layer.

  13. Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots

    SciTech Connect (OSTI)

    Robert, C., E-mail: cedric.robert@insa-rennes.fr, E-mail: cedric.robert@tyndall.ie; Pedesseau, L.; Cornet, C.; Jancu, J.-M.; Even, J.; Durand, O. [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France)] [Université Européenne de Bretagne, INSA Rennes, France and CNRS, UMR 6082 Foton, 20 Avenue des Buttes de Coësmes, 35708 Rennes (France); Nestoklon, M. O. [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)] [Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Pereira da Silva, K. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Departamento de Física, Universidade Federal do Ceará, P.O. Box 6030, Fortaleza–CE, 60455-970 (Brazil); Alonso, M. I. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain)] [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); Goñi, A. R. [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain) [ICMAB-CSIC, Campus UAB, 08193 Bellaterra (Spain); ICREA, Passeig Lluís Companys 23, 08010 Barcelona (Spain); Turban, P. [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)] [Equipe de Physique des Surfaces et Interfaces, Institut de Physique de Rennes UMR UR1-CNRS 6251, Université de Rennes 1, F-35042 Rennes Cedex (France)

    2014-01-06T23:59:59.000Z

    The nature of the ground optical transition in an (In,Ga)As/GaP quantum dot is thoroughly investigated through a million atoms supercell tight-binding simulation. Precise quantum dot morphology is deduced from previously reported scanning-tunneling-microscopy images. The strain field is calculated with the valence force field method and has a strong influence on the confinement potentials, principally, for the conduction band states. Indeed, the wavefunction of the ground electron state is spatially confined in the GaP matrix, close to the dot apex, in a large tensile strain region, having mainly Xz character. Photoluminescence experiments under hydrostatic pressure strongly support the theoretical conclusions.

  14. Nucleation and Growth of GaN on GaAs (001) Substrates

    SciTech Connect (OSTI)

    Drummond, Timothy J.; Hafich, Michael J.; Heller, Edwin J.; Lee, Stephen R.; Liliental-Weber, Zuzanna; Ruvimov, Sergei; Sullivan, John P.

    1999-05-03T23:59:59.000Z

    The nucleation of GaN thin films on GaAs is investigated for growth at 620 "C. An rf plasma cell is used to generate chemically active nitrogen from N2. An arsenic flux is used in the first eight monolayer of nitride growth to enhance nucleation of the cubic phase. Subsequent growth does not require an As flux to preserve the cubic phase. The nucleation of smooth interfaces and GaN films with low stacking fault densities is dependent upon relative concentrations of active nitrogen species in the plasma and on the nitrogen to gallium flux ratio.

  15. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard [Department of Physics, University of Cincinnati, Cincinnati, OH 45221 (United States); Yarrison-Rice, Jan [Department of Physics, Miami University, Oxford, OH 45056 (United States); Gao, Qiang; Tan, Hoe; Jagadish, Chennupati [Department of Electronic Materials and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Etheridge, Joanne [Monash Centre for Electron Microscopy, Monash University, Victoria, 3800 (Australia); Wong, Bryan M. [Materials Chemistry Department, Sandia National Laboratories, Livermore, CA 94551 (United States)

    2013-12-04T23:59:59.000Z

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  16. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur [Department of Statistics, Giresun University, Giresun (Turkey); Akdemir, Hande Günay; ??can, ?mdat [Department of Mathematics, Giresun University, Giresun (Turkey)

    2014-08-20T23:59:59.000Z

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  17. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01T23:59:59.000Z

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  18. Georgia Power`s Plant Yates CT-121 demonstration performance results

    SciTech Connect (OSTI)

    Burford, D.P. [Southern Co. Services, Inc., Birmingham, AL (United States); Pearl, I.G. [Radian Corp., Tucker, GA (United States)

    1994-12-31T23:59:59.000Z

    The Chiyoda CT-121 demonstration project, being conducted at Georgia Power`s Plant Yates` 100 MWe Unit 1, is an evaluation of a unique wet-limestone, forced-oxidized FGD process and is a part of the Innovative Clean Coal Technology (ICCT) program. The CT-121 process uses a single unique absorber vessel made entirely of fiberglass reinforced plastics called a jet bubbling reactor (JBR). The JBR allows concurrent completion of all the necessary reactions to remove sulfur dioxide from the flue gas and to precipitate a gypsum byproduct. This paper will discuss the results of the low-particulate test phase, including the effects of higher-sulfur coal, as well as initial results from the high-particulate test phase (existing electrostatic precipitator deenergized). DOE-sponsored air toxics testing has also been conducted, but final results were not available at the time of this writing. A discussion of limestone selection and its impact on the dewatering properties of the CT-121 gypsum byproduct is also included. Performance results emphasize the efficiency, reliability, and flexibility of the CT-121 process. Preliminary testing of the CT-121 process at Plant Yates has produced excellent performance results. The process has proven itself capable of exceeding its design SO{sub 2} removal efficiency specification of 90%, both with and without the ESP in service. The process has also achieved SO{sub 2} removal efficiencies of greater than 98%. Particulate measurements, conducted with the ESP deenergized, have established the capability of the CT-121 process to remove over 99% of the boiler`s particulate emissions at 100% boiler load.

  19. Solar energy system performance evaluation: final report for Honeywell OTS 41, Shenandoah (Newnan), Georgia

    SciTech Connect (OSTI)

    Mathur, A K; Pederson, S

    1982-08-01T23:59:59.000Z

    The operation and technical performance of the Solar Operational Test Site (OTS 41) located at Shenandoah, Georgia, are described, based on the analysis of data collected between January and August 1981. The following topics are discussed: system description, performance assessment, operating energy, energy savings, system maintenance, and conclusions. The solar energy system at OTS 41 is a hydronic heating and cooling system consisting of 702 square feet of liquid-cooled flat-plate collectors; a 1000-gallon thermal storage tank; a 3-ton capacity organic Rankine-cycle-engine-assisted air conditioner; a water-to-air heat exchanger for solar space heating; a finned-tube coil immersed in the storage tank to preheat water for a gas-fired hot water heater; and associated piping, pumps, valves, and controls. The solar system has six basic modes of operation and several combination modes. The system operation is controlled automatically by a Honeywell-designed microprocessor-based control system, which also provides diagnostics. Based on the instrumented test data monitored and collected during the 7 months of the Operational Test Period, the solar system collected 53 MMBtu of thermal energy of the total incident solar energy of 219 MMBtu and provided 11.4 MMBtu for cooling, 8.6 MMBtu for heating, and 8.1 MMBtu for domestic hot water. The projected net annual energy savings due to the solar system were approximately 50 MMBtu of fossil energy (49,300 cubic feet of natural gas) and a loss of 280 kWh(e) of electrical energy.

  20. Landesque capital as an alternative to food storage in Melanesia: irrigated taro terraces in New Georgia, Solomon Islands

    E-Print Network [OSTI]

    Bayliss-Smith, Tim; Hviding, Edvard

    2014-11-07T23:59:59.000Z

    the Lapita littoral fringe, New Georgia, Solomon Islands, pp. 123-40 in Bedford, S., Sand, C. and Connaughton, S.P. (eds.), Oceanic Explorations: Lapita and Western Pacific Settlement. Canberra: Terra Australia 26, ANU E Press. Gollifer, D.E. and Booth... , and the ruta survey team from Mase (Rendol Reke, Leeman Piano, Antony Tupiti and Presah Koba). We are also grateful to Kylie Moloney and Bernadette Hince for their assistance with archival work in Canberra, and Philip Stickler (Cambridge) for his help...

  1. Engineering Study for a Full Scale Demonstration of Steam Reforming Black Liquor Gasification at Georgia-Pacific's Mill in Big Island, Virginia

    SciTech Connect (OSTI)

    Robert De Carrera; Mike Ohl

    2002-03-19T23:59:59.000Z

    Georgia-Pacific Corporation performed an engineering study to determine the feasibility of installing a full-scale demonstration project of steam reforming black liquor chemical recovery at Georgia-Pacific's mill in Big Island, Virginia. The technology considered was the Pulse Enhanced Steam Reforming technology that was developed and patented by Manufacturing and Technology Conversion, International (MTCI) and is currently licensed to StoneChem, Inc., for use in North America. Pilot studies of steam reforming have been carried out on a 25-ton per day reformer at Inland Container's Ontario, California mill and on a 50-ton per day unit at Weyerhaeuser's New Bern, North Carolina mill.

  2. Accurate characterization and improvement of GaAs microstrip attenuation

    E-Print Network [OSTI]

    Carroll, James Mason

    2012-06-07T23:59:59.000Z

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  3. CX-005925: Categorical Exclusion Determination | Department of...

    Broader source: Energy.gov (indexed) [DOE]

    Exclusion Determination Energy Efficiency and Conservation Block Grant - Georgia-City-Athens Clarke, Unified Government of CX(s) Applied: A9, A11, B1.32, B2.5, B5.1 Date:...

  4. Height stabilization of GaSb/GaAs quantum dots by Al-rich capping

    SciTech Connect (OSTI)

    Smakman, E. P., E-mail: e.p.smakman@tue.nl; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, Den Dolech 2, 5612 AZ Eindhoven (Netherlands); DeJarld, M.; Martin, A. J.; Millunchick, J. [Department of Material Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States); Luengo-Kovac, M.; Sih, V. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-09-01T23:59:59.000Z

    GaSb quantum dots (QDs) in a GaAs matrix are investigated with cross-sectional scanning tunneling microscopy (X-STM) and photoluminescence (PL). We observe that Al-rich capping materials prevent destabilization of the nanostructures during the capping stage of the molecular beam epitaxy (MBE) growth process and thus preserves the QD height. However, the strain induced by the absence of destabilization causes many structural defects to appear around the preserved QDs. These defects originate from misfit dislocations near the GaSb/GaAs interface and extend into the capping layer as stacking faults. The lack of a red shift in the QD PL suggests that the preserved dots do not contribute to the emission spectra. We suggest that a better control over the emission wavelength and an increase of the PL intensity is attainable by growing smaller QDs with an Al-rich overgrowth.

  5. Analysis of the AlGaN/GaN vertical bulk current on Si, sapphire, and free-standing GaN substrates

    SciTech Connect (OSTI)

    Perez-Tomas, A.; Fontsere, A.; Llobet, J. [IMB-CNM-CSIC, Campus UAB, 08193 Bellaterra, Barcelona, CAT (Spain); Placidi, M. [IREC, Jardins Dones de Negre 1, 08930 Sant Adria de Besos, Barcelona (Spain); Rennesson, S.; Chenot, S.; Moreno, J. C.; Cordier, Y. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); Baron, N. [CRHEA-CNRS, Rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France); PICOGIGA International, Pl M. Rebuffat, Courtaboeuf 7, 91140 Villejust (France)

    2013-05-07T23:59:59.000Z

    The vertical bulk (drain-bulk) current (I{sub db}) properties of analogous AlGaN/GaN hetero-structures molecular beam epitaxially grown on silicon, sapphire, and free-standing GaN (FS-GaN) have been evaluated in this paper. The experimental I{sub db} (25-300 Degree-Sign C) have been well reproduced with physical models based on a combination of Poole-Frenkel (trap assisted) and hopping (resistive) conduction mechanisms. The thermal activation energies (E{sub a}), the (soft or destructive) vertical breakdown voltage (V{sub B}), and the effect of inverting the drain-bulk polarity have also been comparatively investigated. GaN-on-FS-GaN appears to adhere to the resistive mechanism (E{sub a} = 0.35 eV at T = 25-300 Degree-Sign C; V{sub B} = 840 V), GaN-on-sapphire follows the trap assisted mechanism (E{sub a} = 2.5 eV at T > 265 Degree-Sign C; V{sub B} > 1100 V), and the GaN-on-Si is well reproduced with a combination of the two mechanisms (E{sub a} = 0.35 eV at T > 150 Degree-Sign C; V{sub B} = 420 V). Finally, the relationship between the vertical bulk current and the lateral AlGaN/GaN transistor leakage current is explored.

  6. Multiband GaNAsP Quaternary Alloys

    SciTech Connect (OSTI)

    Yu, K.M.; Walukiewicz, W.; Ager III, J.W.; Bour, D.; Farshchi,R.; Dubon, O.D.; Li, S.X.; Sharp, I.D.; Haller, E.E.

    2005-12-08T23:59:59.000Z

    We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y > 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y > 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells.

  7. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  8. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytechnicheskaya, St. Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26T23:59:59.000Z

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  9. Recent progress in InGaAsSb/GaSb TPV devices

    SciTech Connect (OSTI)

    Shellenbarger, Z.A.; Mauk, M.G.; DiNetta, L.C. [AstroPower, Inc., Newark, DE (United States); Charache, G.W. [Lockheed Martin Corp., Schenectady, NY (United States)

    1996-05-01T23:59:59.000Z

    AstroPower is developing InGaAsSb thermophotovoltaic (TPV) devices. This photovoltaic cell is a two-layer epitaxial InGaAsSb structure formed by liquid-phase epitaxy on a GaSb substrate. The (direct) bandgap of the In{sub 1{minus}x}Ga{sub x}As{sub 1{minus}y}Sb{sub y} alloy is 0.50 to 0.55 eV, depending on its exact alloy composition (x,y); and is closely lattice-matched to the GaSb substrate. The use of the quaternary alloy, as opposed to a ternary alloy--such as, for example InGaAs/InP--permits low bandgap devices optimized for 1,000 to 1,500 C thermal sources with, at the same time, near-exact lattice matching to the GaSb substrate. Lattice matching is important since even a small degree of lattice mismatch degrades device performance and reliability and increases processing complexity. Internal quantum efficiencies as high as 95% have been measured at a wavelength of 2 microns. At 1 micron wavelengths, internal quantum efficiencies of 55% have been observed. The open-circuit voltage at currents of 0.3 A/cm{sup 2} is 0.220 volts and 0.280 V for current densities of 2 A/cm{sup 2}. Fill factors of 56% have been measured at 60 mA/cm{sup 2}. However, as current density increases there is some decrease in fill factor. The results to date show that the GaSb-based quaternary compounds provide a viable and high performance energy conversion solution for thermophotovoltaic systems operating with 1,000 to 1,500 C source temperatures.

  10. Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

    SciTech Connect (OSTI)

    MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Hamilton, A. R., E-mail: Alex.Hamilton@unsw.edu.au [School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Aagesen, M.; Lindelof, P. E. [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)] [Nanoscience Center, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen (Denmark)

    2014-01-06T23:59:59.000Z

    Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

  11. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01T23:59:59.000Z

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  12. Point defect balance in epitaxial GaSb

    SciTech Connect (OSTI)

    Segercrantz, N., E-mail: natalie.segercrantz@aalto.fi; Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F. [Department of Applied Physics, Aalto University, P.O. Box 14100, FIN-00076 Aalto Espoo (Finland); Song, Y.; Wang, S. [Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Göteborg (Sweden); State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 865 Changning Road, Shanghai 200050 (China)

    2014-08-25T23:59:59.000Z

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  13. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12T23:59:59.000Z

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  14. Guidelines: Advance of Funds on Foreign Subcontracts Modified 12/10/10 In general, it is the University of Georgia's policy to deny advance payments to

    E-Print Network [OSTI]

    Arnold, Jonathan

    for the University. However, in exceptional circumstances, it may be necessary to advance funds to subcontractors to ensure that all unspent funds are returned to the University of Georgia's Contracts and Grants DivisionGuidelines: Advance of Funds on Foreign Subcontracts Modified 12/10/10 Background In general

  15. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    of surface waters, and can lead to changes in species composition within land and water ecosystems. AmmoniaPUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S to the formation of acid rain, which can damage sensitive ecosystems. In areas where nitrogen is a limiting

  16. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    work force.. The University of Georgia Cooperative Extension Service College of Agricultural floor with a couple of rows of concrete blocks forming the base of the wall will help prevent rodents brings in oxygen while excess moisture, ammonia, heat and CO2 are removed as the air exits the house

  17. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    work force.. The University of Georgia Cooperative Extension Service College of Agricultural birds include depressed appetite, incoordination, leg weakness, dark skin lesions coupled with edema) Disinfectants and heat: When outbreaks occur, bacteria load can be reduced between flocks by removing old litter

  18. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    work force.. The University of Georgia Cooperative Extension Service College of Agricultural begins long before the birds enter the facility. Proper management of chickens in the field, coupled of food at night and not as much during the heat of the day, which throws off their feed withdrawal

  19. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    .S. Department of Agriculture and counties of the state cooperating. The Cooperative Extension service officers work force.. The University of Georgia Cooperative Extension Service College of Agricultural of electives to tailor their educational program to their specific needs. Students are encouraged to obtain

  20. Proceedings of the Sixteenth Annual Conference of the Cognitive Science Society, 1994. Atlanta, Georgia, August 13-16, 876-881.

    E-Print Network [OSTI]

    Thórisson, Kristinn Rúnar

    , Georgia, August 13-16, 876-881. Simulated Perceptual Grouping: An Application to Human-Computer are explained. Keywords: Perceptual grouping, gestalt perception, multi-modal, simulation, human-computer. This paper describes a general computational model of perceptual grouping and discusses its use in human-computer

  1. PUTTING KNOWLEDGE TO WORK The University of Georgia and Ft. Valley State College, the U.S. Department of Agriculture and counties of the state cooperating.

    E-Print Network [OSTI]

    Navara, Kristen

    educational programs, assistance and materials to all people without regard to race, color, national origin FLOCK IN COLD WEATHER Because of the long, hot, humid summers we experience in Georgia, it is natural. By contrast, when winter weather is reasonably clear and dry, poultry feed is much more stable. However

  2. Nano-scale characterization of GaAsP/GaAs strained superlattice structure by nano-beam electron diffraction

    SciTech Connect (OSTI)

    Jin, Xiuguang [Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Nakahara, Hirotaka [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Saitoh, Koh; Tanaka, Nobuo [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Takeda, Yoshikazu [Nagoya Industrial Science Research Institute, Nagoya 464-0819 (Japan); Aichi Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965 (Japan)

    2014-03-17T23:59:59.000Z

    Distribution of lattice strain in a GaAsP/GaAs superlattice with a periodicity of 10?nm thickness, deposited on a 100?nm GaAs basal layer has been measured by nano-beam electron diffraction. The superlattice on the (001) plane of the basal GaAs layer shows a constant lattice strain from the bottom to the top layers, whereas the superlattice on the basal GaAs surface sloped by 16° from the (001) plane shows a variation of the lattice strain and crystal orientation. The difference of the strain distributions was discussed from the viewpoint of average strain. This tilt was explained by an atomistic model.

  3. Manipulation of emission energy in GaAs/AlGaAs core-shell nanowires with radial heterostructure

    SciTech Connect (OSTI)

    Barbosa, B. G.; Arakaki, H.; Souza, C. A. de; Pusep, Yu. A. [Instituto de Fisica de São Carlos, Universidade de São Paulo, 13560-970 Sao Carlos, SP (Brazil)

    2014-03-21T23:59:59.000Z

    Photoluminescence was studied in GaAs/AlGaAs nanowires (NWs) with different radial heterostructures. We demonstrated that manipulation of the emission energy may be achieved by appropriate choice of the shell structure. The emission at highest energy is generated in the NWs with tunneling thin AlGaAs inner shell and thin GaAs outer shell due to recombination of the photoexcited electrons confined in the outer shell with the holes in the core. Lower energy emission was shown to occur in the NWs with thick outer shell grown in the form of a short-period GaAs/AlGaAs multiple quantum well structure. In this case, the tunneling probability through the multiple quantum wells controls the energy emitted by the NWs. The doping of core results in dominated low energy emission from the GaAs core.

  4. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01T23:59:59.000Z

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  5. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Carrington, P. J.; Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-01-07T23:59:59.000Z

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  6. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T. [Department of Electronics and Electrical Engineering, University of Sheffield, Sheffield S1 3JD (United Kingdom)

    2014-02-03T23:59:59.000Z

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  7. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26T23:59:59.000Z

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  8. Direct observation of Ga-rich microdomains in crack-free AlGaN grown on patterned GaNsapphire substrates

    E-Print Network [OSTI]

    Nabben, Reinhard

    .e., a homogeneous aluminum content, is found near the sample surface. However, the strong rise of quantum efficiency for AlGaN because the Al alloys also nucleate on the mask materials. Recently, growth on patterned structured into a periodic grid of trenches and terraces along 1100 . Prior to the final AlGaN ( Al 0

  9. GaAs single quantum dot embedded into AlGaAs nanowire

    SciTech Connect (OSTI)

    Kochereshko, V. P.; Kats, V. N. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and Spin Optics Laboratory, Saint Petersburg State University, Ul'yanovskaya 1, Petrodvorets, St. Petersburg, 198904 (Russian Federation); Platonov, A. V. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg (Russian Federation); Cirlin, G. E.; Bouravleuv, A. D.; Samsonenko, Yu. B. [A.F.Ioffe Physical-Technical Institute, Politekhnicheskaya 26, 194021, St. Petersburg, Russia and St. Petersburg Academic University of the RAS Khlopina 8/3, 195220, St. Petersburg (Russian Federation); Besombes, L.; Mariette, H. [CEA-CNRS group Nanophysique et Semiconducteurs, CEA, INAC, SP2M, and Institut Néel, 17 rue des Martyrs, F-38054 Grenoble (France)

    2013-12-04T23:59:59.000Z

    We report on a study of the photoluminescence spectra taken from quasi one-dimensional and quasi zero-dimensional semiconductor heterostructures. The structures were grown by molecular-beam epitaxy in (111) direction and were cylindrical nanowires based on AlGaAs, of 20 - 50 nm in diameter and 0.5 - 1 ?m in length. Inside the nanowires contain one or two GaAs quantum dots, of 2 nm thick and 15 - 45 nm in diameter. We studied a single nanowire. The photoluminescence and photoluminescence excitation spectra were registered as a function of the intensity of optical excitation.

  10. Wavelength limits for InGaN quantum wells on GaN

    SciTech Connect (OSTI)

    Pristovsek, Markus, E-mail: markus@pristovsek.de [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)] [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom)

    2013-06-17T23:59:59.000Z

    The emission wavelength of coherently strained InGaN quantum wells (QW) is limited by the maximum thickness before relaxation starts. For high indium contents x>40% the resulting wavelength decreases because quantum confinement dominates. For low indium content x<40% the electron hole wave function overlap (and hence radiative emission) is strongly reduced with increasing QW thickness due to the quantum confined Stark effect and imposes another limit. This results in a maximum usable emission wavelength at around 600?nm for QWs with 40%-50% indium content. Relaxed InGaN buffer layers could help to push this further, especially on non- and semi-polar orientations.

  11. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. (USDOE Idaho Field Office, Idaho Falls, ID (United States)); Koploy, M.A. (General Atomics, San Diego, CA (United States))

    1992-01-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  12. Application of the ASME code in the design of the GA-4 and GA-9 casks

    SciTech Connect (OSTI)

    Mings, W.J. [USDOE Idaho Field Office, Idaho Falls, ID (United States); Koploy, M.A. [General Atomics, San Diego, CA (United States)

    1992-08-01T23:59:59.000Z

    General Atomics (GA) is developing two spent fuel shipping casks for transport by legal weight truck (LWT). The casks are designed to the loading, environmental conditions and safety requirements defined in Title 10 of the Code of Federal Regulations, Part 71 (10CFR71). To ensure that all components of the cask meet the 10CFR71 rules, GA established structural design criteria for each component based on NRC Regulatory Guides and the American Society of Mechanical Engineers Boiler and Pressure Vessel Code (ASME Code). This paper discusses the criteria used for different cask components, how they were applied and the conservatism and safety margins built into the criteria and assumption.

  13. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12T23:59:59.000Z

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  14. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M. [Technische Physik, Physikalisches Institut and Wilhelm Conrad Röntgen-Research Center for Complex Material Systems, Universität Würzburg, Am Hubland, D-97074, Würzburg (Germany); Igusa, R.; Iwamoto, S.; Arakawa, Y. [University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

    2014-09-15T23:59:59.000Z

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  15. AlGaAs/GaAs quantum well infrared detectors and modulators

    E-Print Network [OSTI]

    Dave, Digant Praful

    1990-01-01T23:59:59.000Z

    to the quantum well. This optical transition wavelength lies in the mid infrared region of the spectrum. To get a more realistic picture of the optical transition in a 1-D quantum well, the non-parabolicity of the conduction band of GaAs is taken... into consideration. Further it is seen that with the change in temperature and doping concentration the width and peak of the absorption curve also changes. Based on the above calculations and results an AIGaAs/GaAs quantum well infrared photodetector...

  16. Radiation Hard AlGaN Detectors and Imager

    SciTech Connect (OSTI)

    None

    2012-05-01T23:59:59.000Z

    Radiation hardness of AlGaN photodiodes was tested using a 65 MeV proton beam with a total proton fluence of 3x10{sup 12} protons/cm{sup 2}. AlGaN Deep UV Photodiode have extremely high radiation hardness. These new devices have mission critical applications in high energy density physics (HEDP) and space explorations. These new devices satisfy radiation hardness requirements by NIF. NSTec is developing next generation AlGaN optoelectronics and imagers.

  17. Nitrogen-concentration control in GaNAs/AlGaAs quantum wells using nitrogen ?-doping technique

    SciTech Connect (OSTI)

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Noda, Takeshi; Sugimoto, Yoshimasa; Sakuma, Yoshiki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Elborg, Martin; Sakoda, Kazuaki [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan and Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8577 (Japan)

    2014-05-15T23:59:59.000Z

    GaNAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells (MQWs) with nitrogen ?-doping were fabricated on GaAs (100) substrates by plasma-assisted molecular beam epitaxy. High controllability of nitrogen-concentrations in the MQWs was achieved by tuning nitrogen ?-doping time. The maximum nitrogen concentration in the MQWs was 2.8%. The MQWs exhibit intense, narrow photoluminescence emission.

  18. GaAs/AlGaAs nanostructured composites for free-space and integrated optical devices

    E-Print Network [OSTI]

    Tsai, Chia-Ho

    2006-01-01T23:59:59.000Z

    after development with MIBK:IPA=1:2 for 2min. Different fillon GaAs developed with MIBK:IPA=1:2 for (a) 1 min; (b) 2d) shows a nonoptimized developer, MIBK:IPA=2:1, used for 3

  19. O?[]O? nuclear ?-decay of ?²Ga

    E-Print Network [OSTI]

    Hyman, Bruce Carl

    1999-01-01T23:59:59.000Z

    information, MARS was focused such that only fully stripped N=Z ions were passed, with the vast majority of them being Ga. The second phase of the experiment was a I3-y coincidence experiment. At the back-end of MARS, a 1" x 1 '!4" x 3" four..., using the Weinberg-Salam model of electroweak interactions, to be [23]: A& ? d, ?= ? [41n(mz/m )+ln(m /m?)+2K+A +" ]. (16) Here mz is the mass of the Z boson, me the proton mass, mx is the low energy cutoff for the second and third terms that arise...

  20. General Atomics (GA) | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCIResearch to sponsorGeneral Atomics (GA)

  1. GA SNC Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpen EnergyBoard" form. To create aGA SNC Solar Jump to:

  2. Theoretical studies of optical gain tuning by hydrostatic pressure in GaInNAs/GaAs quantum wells

    SciTech Connect (OSTI)

    Gladysiewicz, M.; Wartak, M. S. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland); Department of Physics and Computer Science, Wilfrid Laurier University, Waterloo, Ontario N2L 3C5 (Canada); Kudrawiec, R. [Institute of Physics, Wroclaw University of Technology, 50-370 Wroclaw, Wybrzeze Wyspianskiego 27 (Poland)

    2014-01-21T23:59:59.000Z

    In order to describe theoretically the tuning of the optical gain by hydrostatic pressure in GaInNAs/GaAs quantum wells (QWs), the optical gain calculations within kp approach were developed and applied for N-containing and N-free QWs. The electronic band structure and the optical gain for GaInNAs/GaAs QW were calculated within the 10-band kp model which takes into account the interaction of electron levels in the QW with the nitrogen resonant level in GaInNAs. It has been shown that this interaction increases with the hydrostatic pressure and as a result the optical gain for GaInNAs/GaAs QW decreases by about 40% and 80% for transverse electric and transverse magnetic modes, respectively, for the hydrostatic pressure change from 0 to 40 kilobars. Such an effect is not observed for N-free QWs where the dispersion of electron and hole energies remains unchanged with the hydrostatic pressure. This is due to the fact that the conduction and valence band potentials in GaInAs/GaAs QW scale linearly with the hydrostatic pressure.

  3. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  4. Development of a Bulk GaN Growth Technique for Low Defect Density...

    Broader source: Energy.gov (indexed) [DOE]

    current due to bulk defects GaN is Grown Heteroepitaxially on Sapphire (and Silicon Carbide) Substrates * As grown GaN nucleation layers contain disordered GaN with many...

  5. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04T23:59:59.000Z

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  6. The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1

    SciTech Connect (OSTI)

    Long, R.C.

    1996-12-31T23:59:59.000Z

    This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

  7. The Essentials for GA Water Planning The Relationship

    E-Print Network [OSTI]

    Rosemond, Amy Daum

    " FL Water Law Regulated Riparianism "Heavy" Admin Water Law ? #12;Comprehensive Water Resource Study Supply a. Water Allocation ­ Withdrawal Permit Program b. Water Storage & Delivery c. Interbasin TransferThe Essentials for GA Water Planning The Relationship Between the Proposed GA State Comprehensive

  8. CoNiGa High Temperature Shape Memory Alloys

    E-Print Network [OSTI]

    Dogan, Ebubekir

    2011-10-21T23:59:59.000Z

    commercially successful SMAs such as NiTi and Cu-based alloys. In recent years, the CoNiGa system has emerged as a new ferromagnetic shape memory alloy with some compositions exhibiting high martensitic transformation temperatures which makes CoNiGa a potential...

  9. Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n-lnGaAs/lnP/p-InGaAs heterostructures

    E-Print Network [OSTI]

    Luryi, Serge

    Collector-up light-emitting charge injection transistors in n-lnGaAs/lnAIAs/ plllnGaAs and n (Received 23 November 1992; accepted for publication 4 March 1993) The realization of collector-up light for the collector stripe definition. Electrons, injected over the wide-gap heterostructure barrier (InAlAs or In

  10. Partially filled intermediate band of Cr-doped GaN films

    SciTech Connect (OSTI)

    Sonoda, S. [Department of Electronics, Kyoto Institute of Technology, Kyoto 606-8585 (Japan)

    2012-05-14T23:59:59.000Z

    We investigated the band structure of sputtered Cr-doped GaN (GaCrN) films using optical absorption, photoelectron yield spectroscopy, and charge transport measurements. It was found that an additional energy band is formed in the intrinsic band gap of GaN upon Cr doping, and that charge carriers in the material move in the inserted band. Prototype solar cells showed enhanced short circuit current and open circuit voltage in the n-GaN/GaCrN/p-GaN structure compared to the GaCrN/p-GaN structure, which validates the proposed concept of an intermediate-band solar cell.

  11. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05T23:59:59.000Z

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  12. GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications

    SciTech Connect (OSTI)

    Noda, T., E-mail: NODA.Takeshi@nims.go.jp; Otto, L. M.; Elborg, M.; Jo, M.; Mano, T.; Kawazu, T.; Han, L. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Sakaki, H. [National Institute for Materials Science, Tsukuba, Ibaraki 305-0047 (Japan); Toyota Technological Institute, Nagoya 468-8511 (Japan)

    2014-03-24T23:59:59.000Z

    We have fabricated GaAs/AlGaAs quantum well (QW) solar cells in which 3?nm-thick QWs and indirect-gap Al{sub 0.78}Ga{sub 0.22}As barriers are embedded, and we studied extraction processes of photogenerated carriers in this QW system. The photocurrent under 700?nm light illumination at voltages close to the open-circuit voltage shows only a small reduction, indicating that the carrier recombination inside QWs is largely suppressed. We attribute this result to an efficient extraction of electrons from the QWs through the X-valley of AlGaAs. The insertion of QWs is shown to be effective in extending the absorption wavelengths and in enhancing the photocurrent. The use of indirect-gap materials as barriers is found to enhance carrier extraction processes, and result in an improved performance of QW solar cells.

  13. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  14. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium-effect transistors have been formed by incorporating barium strontium titanate (BST) deposited by rf magnetron in increased leakage. Due to its large dielectric constant, barium strontium ti- tanate [Ba1-xSrxTiO3, (BST

  15. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01T23:59:59.000Z

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  16. High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

    E-Print Network [OSTI]

    Lu, Bin

    In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

  17. Fabrication of quantum point contacts by engraving GaAsAlGaAs heterostructures with a diamond tip

    E-Print Network [OSTI]

    Hohls, Frank

    by hot-filament chemical vapor deposition of polycrystalline diamond onto a prepat- terned siliconFabrication of quantum point contacts by engraving GaAsÕAlGaAs heterostructures with a diamond tip for publication 17 July 2002 We use the all-diamond tip of an atomic force microscope for the direct engraving

  18. OPTIMIZATION OF GaN WINDOW LAYER FOR InGaN SOLAR CELLS USING POLARIZATION EFFECT

    E-Print Network [OSTI]

    Honsberg, Christiana

    on the design of wide-band gap GaN window layers for InGaN solar cells. Window layers serve to passivate the top into account during design of the solar cell to improve its collection efficiency. Previously, we have. The present work is a subset of the design optimization process for such solar cells, where we focus

  19. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31T23:59:59.000Z

    the engineering of high mobility, high carrier density channels at III-Nitride heterointerfaces. In order to seize market share from silicon, the cost of manufacturing GaN-based devices must be further reduced. With the successful realization of 200mm Ga...

  20. Analysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp characteristics

    E-Print Network [OSTI]

    Klotzkin, David

    injection which we term "thermal impact" , the ther- mal conductivity of the active region is estimatedAnalysis of the reduced thermal conductivity in InGaAs/GaAs quantum dot lasers from chirp; published online 21 September 2006 The thermal conductivity of self-organized quantum dot QD active regions

  1. Diffusion of a Ga adatom on the GaAs(001)c(44)heterodimer surface: A first principles study

    E-Print Network [OSTI]

    Khare, Sanjay V.

    Diffusion of a Ga adatom on the GaAs(001)c(4×4)heterodimer surface: A first principles study J Diffusion barriers Reconstruction Density functional calculations The adsorption and diffusion behavior functional theory (DFT) computations in the local density approxima- tion. Structural and bonding features

  2. Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures at low fields

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    Electric field dependent radiative decay kinetics of polar InGaN/GaN quantum heterostructures with increasing external electric field, with the radiative component exhibiting weaker field dependence. © 2009 applied electric field in Ref. 12, the electric field dependent radiative recombination in particular has

  3. Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a)

    E-Print Network [OSTI]

    Optical study of hydrogen-irradiated GaAsN/GaAs heterostructures M. Geddo,1,a) M. Patrini,1 G; accepted 5 May 2011; published online 20 June 2011) The effect of hydrogen irradiation on the optical for fiber optic communications. These promising results in view of the development of waveguides deserve

  4. An AlGaAsGaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3

    E-Print Network [OSTI]

    out using a compact thermo-electrically cooled laser package. The QCL described here is designedAn AlGaAs­GaAs quantum cascade laser operating with a thermoelectric cooler for spectroscopy of NH3. Langford b a Department of Electronics and Electrical Engineering, Rankine Building, University of Glasgow

  5. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  6. Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers C. Wetzel, Nagoya, Japan Received 11 December 1995; accepted for publication 21 February 1996 Infrared reflection, their alloys and potential substrates need to be investigated as well. Here we present a study of the infrared

  7. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R. [Department of Physics, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa); Carrington, P. J. [Department of Electronic and Electrical Engineering, University College London, London (United Kingdom); Krier, A. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)

    2014-07-28T23:59:59.000Z

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  8. Single photon emission from site-controlled InGaN/GaN quantum dots

    SciTech Connect (OSTI)

    Zhang, Lei; Hill, Tyler A.; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States)] [Department of Physics, University of Michigan, 450 Church Street, Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Lee, Leung-Kway; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)] [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

    2013-11-04T23:59:59.000Z

    Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90?K, the highest temperature to date for site-controlled quantum dots. Micro-photoluminescence study on individual quantum dots showed linearly polarized single exciton emission with a lifetime of a few nanoseconds. The dimensions of these quantum dots were well controlled to the precision of state-of-the-art fabrication technologies, as reflected in the uniformity of their optical properties. The yield of optically active quantum dots was greater than 90%, among which 13%–25% exhibited single photon emission at 10?K.

  9. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04T23:59:59.000Z

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  10. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07T23:59:59.000Z

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  11. Enhanced optical property in quaternary GaInAsSb/AlGaAsSb quantum wells

    SciTech Connect (OSTI)

    Lin, Chien-Hung, E-mail: chlin.ee97g@g2.nctu.edu.tw; Lee, Chien-Ping [Department of Electronics Engineering, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)

    2014-10-21T23:59:59.000Z

    High quality GaInAsSb/AlGaAsSb quantum wells (QWs) have been grown by molecular beam epitaxy using proper interface treatments. By controlling the group-V elements at interfaces, we obtained excellent optical quality QWs, which were free from undesired localized trap states, which may otherwise severely affect the exciton recombination. Strong and highly efficient exciton emissions up to room temperature with a wavelength of 2.2 ?m were observed. A comprehensive investigation on the QW quality was carried out using temperature dependent and power dependent photoluminescence (PL) measurements. The PL emission intensity remains nearly constant at low temperatures and is free from the PL quenching from the defect induced localized states. The temperature dependent emission energy had a bulk-like behavior, indicating high quality well/barrier interfaces. Because of the uniformity of the QWs and smooth interfaces, the low temperature limit of inhomogeneous line width broadening is as small as 5?meV.

  12. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

    SciTech Connect (OSTI)

    Ramesh, V.; Kikuchi, A.; Kishino, K. [Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan); CREST, JST, Saitama 332-0012 (Japan); Funato, M.; Kawakami, Y. [CREST, JST, Saitama 332-0012 (Japan); Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510 (Japan)

    2010-06-15T23:59:59.000Z

    The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.

  13. Low Cost Inkjet-printing Paper-Based Modules for RFID Sensing and Wireless Applications

    E-Print Network [OSTI]

    Tentzeris, Manos

    of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250, USA 1 arida

  14. 1080 IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, VOL. 9, 2010 Integrated Wideband 2-D and 3-D Transitions

    E-Print Network [OSTI]

    Tentzeris, Manos

    are with the Electrical Engineering Department, Georgia Institute of Technology, Atlanta, GA 30332 USA (e-mail: arida

  15. Choice Based Revenue Management for Parallel Flights

    E-Print Network [OSTI]

    Jim Dai

    2014-03-06T23:59:59.000Z

    Mar 6, 2014 ... We formulate corresponding deterministic (fluid) optimization ... and Systems Engineering, Georgia Institute of Technology, Atlanta, GA ...

  16. The center for plant and microbial complex carbohydrates at the University of Georgia Complex Carbohydrate Research Center

    SciTech Connect (OSTI)

    Albersheim, P.; Darvill, A.

    1991-08-01T23:59:59.000Z

    Research from the Complex Carbohydrates Research Center at the University of Georgia is presented. Topics include: Structural determination of soybean isoflavones which specifically induce Bradyrhizobium japonicum nodD1 but not the nodYABCSUIJ operon; structural analysis of the lipopolysaccharides (LPSs) from symbiotic mutants of Bradyrhizobium japonicum; structural characterization of lipooligosaccharides from Bradyrhizobium japonicum that are required for the specific nodulation of soybean; structural characterization of the LPSs from R. Leguminosarum biovar phaseoli, the symbiont of bean; characterization of bacteroid-specific LPS epitopes in R. leguminosarum biovar viciae; analysis of the surface polysaccharides of Rhizobium meliloti mutants whose lipopolysaccharides and extracellular polysaccharides can have the same function in symbiosis; characterization of a polysaccharide produced by certain Bradyrhizobium japonicum strains within soybean nodules; structural analysis of a streptococcal adhesin polysaccharide receptor; conformational studies of xyloglucan, the role of the fucosylated side chain in surface-specific cellulose-xyloglucan interactions; the structure of an acylated glucosamine oligosaccharide signal molecule (nod factor) involved in the symbiosis of Rhizobium leguminosarum biovar viciae with its host Vicia sativa; investigating membrane responses induced by oligogalacturonides in cultured cells; the polygalacturonase inhibitor protein; characterization of the self-incompatability glycoproteins from Petunia hybrida; investigation of the cell wall polysaccharide structures of Arabidopsis thaliana; and the glucan inhibition of virus infection of tabacco.

  17. Field dependent emission rates in radiation damaged GaAs

    SciTech Connect (OSTI)

    Fleming, R. M.; Myers, S. M.; Wampler, W. R.; Lang, D. V.; Seager, C. H.; Campbell, J. M. [Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

    2014-07-07T23:59:59.000Z

    We have measured the temperature and field dependence of emission rates from five traps in electron damaged GaAs. Four of the traps have previously been identified as radiation defects. One of the traps, seen in higher doped diodes, has not been previously identified. We have fit the data to a multiphonon emission theory that allows recombination in GaAs to be characterized over a broad range of temperature and electric field. These results demonstrate an efficient method to calculate field-dependent emission rates in GaAs.

  18. Effect of Sb on the Properties of GaInP Top Cells (Presentation)

    SciTech Connect (OSTI)

    Olson, J. M.; McMahon, W. E.; Kurtz, S.

    2006-05-01T23:59:59.000Z

    The summary of this report is that: (1) Sb can be used to increase V{sub oc} of a GaInP top cell; (2) the photovoltaic quality of GaInP is relatively unaffected by the presence of Sb; and (3) Sb-doped GaInP/GaAs tandem cells show promise for achieving efficiencies over 32%.

  19. Ritual and Authority in Early Athens

    E-Print Network [OSTI]

    Laughy, Michael Harold

    2010-01-01T23:59:59.000Z

    Odysseus (Od. 22.334-336), Priam (Il. 24.306-307), Peleus (Odysseus (Od. 22.334-336), Priam (Il. 24.306-307), Peleus (incident to Penelope. 263 Priam 258. Il. 22.508-514: /I/ -

  20. Athens, Greece: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuo Feng Bio EnergyInstituteFunding JumpGeothermalGreece:

  1. Athens, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of Inspector GeneralDepartmentAUDIT REPORTOpenWendeGuo Feng Bio EnergyInstituteFunding

  2. Athens, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is classified as

  3. Athens, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160 EastMaine: Energy Resources JumpAspen Aerogels05. It is classified as330224°,

  4. Athens Utility Board | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating SolarElectricEnergyCT BiomassArnprior, Ontario: EnergyAskja EnergyIowa) JumpBoard Jump

  5. Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

    SciTech Connect (OSTI)

    Mutta, Geeta Rani; Venturi, Giulia; Castaldini, Antonio; Cavallini, Anna [Department of Physics and Astronomy, University of Bologna, Viale Carlo Berti Pichat 6/II, 40127 Bologna (Italy); Meneghini, Matteo; Zanoni, Enrico; Meneghesso, Gaudenzio [University of Padova, Department of Information Engineering, via Gradenigo 6/B, Padova 35131 (Italy); Zhu, Dandan; Humphreys, Colin [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom)

    2014-02-21T23:59:59.000Z

    We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

  6. Waveguide effect of GaAsSb quantum wells in a laser structure based on GaAs

    SciTech Connect (OSTI)

    Aleshkin, V. Ya. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Afonenko, A. A. [Belarussian State University (Belarus)] [Belarussian State University (Belarus); Dikareva, N. V. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation); Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Kudryavtsev, K. E.; Morozov, S. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Nekorkin, S. M. [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)] [Research Physical-Technical Institute of Nizhni Novgorod State University (Russian Federation)

    2013-11-15T23:59:59.000Z

    The waveguide effect of GaAsSb quantum wells in a semiconductor-laser structure based on GaAs is studied theoretically and experimentally. It is shown that quantum wells themselves can be used as waveguide layers in the laser structure. As the excitation-power density attains a value of 2 kW/cm{sup 2} at liquid-nitrogen temperature, superluminescence at the wavelength corresponding to the optical transition in bulk GaAs (at 835 nm) is observed.

  7. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D., E-mail: dipankarsaha@iitb.ac.in [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); IITB-Monash Research Academy, Indian Institute of Technology Bombay, Mumbai 400076 (India); Adari, R.; Sankaranarayan, S.; Kumar, A. [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India)] [Centre of Excellence in Nanoelectronics, Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076 (India); Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S. [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)] [Department of Electrical and Computer Engineering, King Abdulaziz University, Jeddah 21589 (Saudi Arabia)

    2013-12-09T23:59:59.000Z

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  8. Beta-decay branching ratios of 62Ga

    E-Print Network [OSTI]

    A. Bey; B. Blank; G. Canchel; C. Dossat; J. Giovinazzo; I. Matea; V. Elomaa; T. Eronen; U. Hager; M. Hakala; A. Jokinen; A. Kankainen; I. Moore; H. Penttila; S. Rinta-Antila; A. Saastamoinen; T. Sonoda; J. Aysto; N. Adimi; G. De France; J. C. Thomas; G. Voltolini; T. Chaventré

    2008-04-17T23:59:59.000Z

    Beta-decay branching ratios of 62Ga have been measured at the IGISOL facility of the Accelerator Laboratory of the University of Jyvaskyla. 62Ga is one of the heavier Tz = 0, 0+ -> 0+ beta-emitting nuclides used to determine the vector coupling constant of the weak interaction and the Vud quark-mixing matrix element. For part of the experimental studies presented here, the JYFLTRAP facility has been employed to prepare isotopically pure beams of 62Ga. The branching ratio obtained, BR= 99.893(24)%, for the super-allowed branch is in agreement with previous measurements and allows to determine the ft value and the universal Ft value for the super-allowed beta decay of 62Ga.

  9. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet, E-mail: aekavruk@selcuk.edu.tr, E-mail: aekavruk@gmail.com; Koc, Fatih [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Sahin, Mehmet, E-mail: mehmet.sahin@agu.edu.tr, E-mail: mehsahin@gmail.com [Physics Department, Faculty of Sciences, Selcuk University, 42075 Konya (Turkey); Department of Material Sciences and Nanotechnology Engineering, Abdullah Gul University, Kayseri (Turkey)

    2013-11-14T23:59:59.000Z

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  10. Transverse acoustic actuation of Ni-Mn-Ga single crystals

    E-Print Network [OSTI]

    Simon, Jesse Matthew

    2007-01-01T23:59:59.000Z

    Two methods for the transverse acoustic actuation of {110}-cut Ni-Mn-Ga single crystals are discussed. In this actuation mode, crystals are used that have the {110}- type twinning planes parallel to the base of the crystal. ...

  11. Lattice vibrations of pure and doped GaSe

    SciTech Connect (OSTI)

    Allakhverdiev, K. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey) and Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan)]. E-mail: kerim.allahverdi@mam.gov.tr; Baykara, T. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Ellialtioglu, S. [Department of Physics, Middle East Technical University, Ankara 06531 (Turkey); Hashimzade, F. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Huseinova, D. [Institute of Physics, Azerbaijan National Academy of Sciences, Baku AZ1143 (Azerbaijan); Kawamura, K. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan); Kaya, A.A. [Materials Institute, Marmara Research Center, TUBITAK, Gebze/Kocaeli 41470 (Turkey); Kulibekov, A.M. [Department of Physics, Mugla University, Mugla 48000 (Turkey); Onari, S. [Institute of Materials Science, University of Tsukuba 305-8573 (Japan)

    2006-04-13T23:59:59.000Z

    The Bridgman method is used to grow especially undoped and doped single crystals of GaSe. Composition and impurity content of the grown crystals were determined using X-ray fluorescence (XRF) method. X-ray diffraction, Raman scattering, photoluminescence (PL), and IR transmission measurements were performed at room temperature. The long wavelength lattice vibrations of four modifications of GaSe were described in the framework of modified one-layer linear-chain model which also takes into consideration the interaction of the selenium (Se) atom with the second nearest neighbor gallium (Ga) atom in the same layer. The existence of an eight-layer modification of GaSe is suggested and the vibrational frequencies of this modification are explained in the framework of a lattice dynamical model considered in the present work. Frequencies and the type of vibrations (gap, local, or resonance) for the impurity atoms were calculated and compared with the experimental results.

  12. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01T23:59:59.000Z

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  13. GEORGIA SOUTHERN UNIVERSITY University System of Georgia

    E-Print Network [OSTI]

    Hutcheon, James M.

    forceplates, Helmet Impact Telemetry (HIT) system for 40 football helmets, an AMTI instrumented treadmill

  14. Anti-phase domains in cubic GaN

    SciTech Connect (OSTI)

    Maria Kemper, Ricarda; Schupp, Thorsten; Haeberlen, Maik; Lindner, Joerg; Josef As, Donat [University of Paderborn, Department of Physics, Warburger Str. 100, D-33098 Paderborn (Germany); Niendorf, Thomas; Maier, Hans-Juergen [University of Paderborn, Lehrstuhl fuer Werkstoffkunde, Pohlweg 47-49, D-33098 Paderborn (Germany); Dempewolf, Anja; Bertram, Frank; Christen, Juergen [University of Magdeburg, Institut fuer Festkoerperphysik, P.O. Box 4120, D-39016 Magdeburg (Germany); Kirste, Ronny; Hoffmann, Axel [Technische Universitaet Berlin, Institute of Solid State Physics, Hardenbergstr. 36, D-10623 Berlin (Germany)

    2011-12-15T23:59:59.000Z

    The existence of anti-phase domains in cubic GaN grown on 3C-SiC/Si (001) substrates by plasma-assisted molecular beam epitaxy is reported. The influence of the 3C-SiC/Si (001) substrate morphology is studied with emphasis on the anti-phase domains (APDs). The GaN nucleation is governed by the APDs of the substrate, resulting in equal plane orientation and the same anti-phase boundaries. The presence of the APDs is independent of the GaN layer thickness. Atomic force microscopy surface analysis indicates lateral growth anisotropy of GaN facets in dependence of the APD orientation. This anisotropy can be linked to Ga and N face types of the {l_brace}111{r_brace} planes, similar to observations of anisotropic growth in 3C-SiC. In contrast to 3C-SiC, however, a difference in GaN phase composition for the two types of APDs can be measured by electron backscatter diffraction, {mu}-Raman and cathodoluminescence spectroscopy.

  15. Fabrication of Two-Dimensional Photonic Crystals in AlGaInP/GaInP Membranes by Inductively Coupled Plasma Etching

    E-Print Network [OSTI]

    Chen, A.

    The fabrication process of two-dimensional photonic crystals in an AlGaInP/GaInP multi-quantum-well membrane structure is developed. The process includes high resolution electron-beam lithography, pattern transfer into ...

  16. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23T23:59:59.000Z

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  17. Epitaxial growth of Cu,,In,Ga...Se2 on GaAs,,110... and A. Rockett

    E-Print Network [OSTI]

    Rockett, Angus

    . INTRODUCTION The Cu(In, Ga)Se2 CIGS absorber layer in a recent record-efficiency CIGS solar cell1 has a 220.13 Commercially supplied ``epi-ready'' liquid- encapsulated Czo

  18. Reducing the efficiency droop by lateral carrier confinement in InGaN/GaN quantum-well nanorods

    E-Print Network [OSTI]

    Shi, Chentian; Yang, Fan; Park, Min Joo; Kwak, Joon Seop; Jung, Sukkoo; Choi, Yoon-Ho; Wang, Xiaoyong; Xiao, Min

    2013-01-01T23:59:59.000Z

    Efficiency droop is a major obstacle facing high-power application of InGaN/GaN quantum-well (QW) light-emitting diodes. In this letter, we report the suppression of efficiency droop induced by density-activated defect recombination in nanorod structure of a-plane InGaN/GaN QWs. In the high carrier density regime, the retained emission efficiency in a dry-etched nanorod sample is observed to be over two times higher than that in its parent QW sample. We further argue that the improvement is a combined effect of the amendment contributed by lateral carrier confinement and the deterioration made by surface trapping.

  19. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03T23:59:59.000Z

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  20. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07T23:59:59.000Z

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  1. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa [Ahi Evran Üniversitesi Fen Edebiyat Fakültesi Fizik Bölümü, K?r?ehir (Turkey); Turgut, Kemal [Yüksek Lisans Ö?rencisi, K?r?ehir (Turkey); Arikan, Nihat [Ahi Evran Üniversitesi E?itim Fakültesi ?lkö?retim Bölümü, K?r?ehir (Turkey); ?yigör, Ahmet; Candan, Abdullah [Ahi Evran Üniversitesi Merkezi Ara?t?rma Laboratuvar?, K?r?ehir (Turkey)

    2014-10-06T23:59:59.000Z

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  2. Reduced lattice temperature high-speed operation of pseudomorphic InGaAdGaAs field-effect transistors

    E-Print Network [OSTI]

    Kolodzey, James

    ,um GaAs buffer, 170 A Ino.zGao,sAs strained channel, 50 A undoped Ale,,,Ga,,,As undoped spacer, S dimensions of 0.25 x 200 pm and 0.5 X 200 pm with a source-drain spacing of 2 ,um. The MODFETs have gate dimensions of 0.35~ 100 pm and 0.47X 100 pm with a source-drain spacing of 1 ,um. The MISFETs have

  3. 60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High-Electron-Mobility Transistor on a GaAs Substrate

    E-Print Network [OSTI]

    Choi, Woo-Young

    60 GHz Harmonic Optoelectronic Up-Conversion Using an InAlAs/InGaAs Metamorphic High optoelectronic up-conversion using an InAlAs/InGaAs metamorphic high-electron-mobility transistor (HEMT) on a Ga 1 GHz signals into a 60 GHz band. After investigating the dependences of optoelectronic mixing

  4. Organometallic Vapor Phase Epitaxy of n-GaSb and n-GaInAsSb for Low Resistance Ohmic Contacts

    SciTech Connect (OSTI)

    C.A. Wang; D.A. Shiau; R.K. Huang; C.T. Harris; M.K. Connors

    2003-07-10T23:59:59.000Z

    A comparison of n-GaSb and n-GaInAsSb epilayers for ohmic contacts in GaSb-based devices is studied. The epilayers were grown by organometallic vapor phase epitaxy and doped with Te. At similar electron concentrations, the atomic Te concentration, as determined by secondary ion mass spectroscopy, is more than 2 times higher in n-GaSb compared to n-GaInAsSb. In addition, the electron mobility is lower in n-GaSb than n-GaInAsSb at similar electron concentrations. The electron concentration saturates at about 1.3 x 10{sup 18} cm{sup -3} for n-GaSb, but linearly increases for n-GaInAsSb. Pd/Ge/Au/Pt/Au metallization was studied for ohmic contacts. A specific contact resistivity of 1 x 10{sup -5}{Omega}-cm{sup 2} for n-GaSb was measured. The specific contact resistivity can be greatly improved by contacting n-GaInAsSb, and a significantly lower specific contact resistivity of 2 x 10{sup -6} {Omega}-cm{sup 2} for n-GaInAsSb was measured.

  5. The crucial role of doping for high repetition rate monolithic mode locking of multiple quantum well GaAs/AlGaAs lasers

    E-Print Network [OSTI]

    have been operated in GaAs/AlGaAs and InP/InGaAsP mul- tiple quantum well MQW materials showed no evidence of mode-locked operation. Band-edge absorption spectra are also presented which

  6. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21T23:59:59.000Z

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  7. Testing of ethylene propylene seals for the GA-4/GA-9 casks

    SciTech Connect (OSTI)

    Boonstra, R.H.

    1993-08-01T23:59:59.000Z

    The primary O-ring seal of the GA-4 and GA-9 casks was tested for leakage with a full-scale mockup of the cask lid and flange. Tests were performed at temperatures of ambient, {minus}41{degrees}, 121{degrees}, and 193{degrees}C. Shim plates between the lid and flange simulated gaps caused by thermal distortion. The testing used a helium mass spectrometer leak detector (MSLD). Results showed that the primary seal was leaktight for all test conditions. Helium permeation through the seal began in 13--23 minutes for the ambient tests and in 1--2 minutes for the tests at elevated temperatures. After each test several hours of the pumping were typically required to reduce the MSLD background reading to an acceptable level for the next test, indicating that the seal had become saturated with helium. To verify that the test results showed permeation and not real leakage, several response checks were conducted in which a calibrated leak source was inserted in the detector line near the seal. When the leak source was activated the detector responded within seconds.

  8. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07T23:59:59.000Z

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  9. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon, E-mail: Gordon.Schmidt@ovgu.de; Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg (Germany); Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas [Institute of Condensed Matter Physics, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2014-07-21T23:59:59.000Z

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  10. Suppression of nuclear spin diffusion at a GaAs/AlGaAs interface measured with a single quantum dot nano-probe

    E-Print Network [OSTI]

    A. E. Nikolaenko; E. A. Chekhovich; M. N. Makhonin; I. W. Drouzas; A. B. Vankov; J. Skiba-Szymanska; M. S. Skolnick; P. Senellart; A. Lemaitre; A. I. Tartakovskii

    2009-01-15T23:59:59.000Z

    Nuclear spin polarization dynamics are measured in optically pumped individual GaAs/AlGaAs interface quantum dots by detecting the time-dependence of the Overhauser shift in photoluminescence (PL) spectra. Long nuclear polarization decay times of ~ 1 minute have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.

  11. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15T23:59:59.000Z

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  12. Maskless lateral epitaxial overgrowth of GaN on sapphire

    SciTech Connect (OSTI)

    Fini, P.; Marchand, H.; Ibbetson, J.P.; Moran, B.; Zhao, L.; Denbaars, S.P.; Speck, J.S.; Mishra, U.K.

    1999-07-01T23:59:59.000Z

    The authors demonstrate a technique of lateral epitaxial overgrowth (LEO) of GaN, termed maskless LEO, in which no mask is deposited prior to LEO regrowth. Instead, a bulk (> 2 {micro}m) GaN layer on sapphire is selectively dry etched, leaving {approximately} 5 {micro}m-wide stripe mesas oriented in the <10{bar 1}0>{sub GaN} direction, with a 20 {micro}m period. These stripes serve as seeds for LEO GaN growth, which proceeds from the tops of the stripes and expands laterally, resulting in a T, or overhang, morphology. As for LEO over an SiO{sub 2} mask, significant defect reduction (from {approximately} 10{sup 9} cm{sup {minus}2} to {approximately} 10{sup 6} cm{sup {minus}2}) is observed in cross-sectional transmission electron microscopy (TEM). Atomic force microscopy of the top surface of the LEO GaN reveals that no threading dislocations with screw component terminate at the surfaces of laterally overgrown regions. X-ray diffraction measurements reveal that the wings exhibit a crystallographic tilt away from the seed regions in an azimuth perpendicular to the stripe direction; the tilt angle ({approximately} 0.4--0.5{degree}) is relatively independent of growth temperature and wing aspect ratio.

  13. Pulsed laser annealing of Be-implanted GaN

    SciTech Connect (OSTI)

    Wang, H.T.; Tan, L.S.; Chor, E.F. [Centre for Optoelectronics, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

    2005-11-01T23:59:59.000Z

    Postimplantation thermal processing of Be in molecular-beam-epitaxy-grown GaN by rapid thermal annealing (RTA) and pulsed laser annealing (PLA) was investigated. It has been found that the activation of Be dopants and the repair of implantation-induced defects in GaN films cannot be achieved efficiently by conventional RTA alone. On the other hand, good dopant activation and surface morphology and quality were obtained when the Be-implanted GaN film was annealed by PLA with a 248 nm KrF excimer laser. However, observations of off-resonant micro-Raman and high-resolution x-ray-diffraction spectra indicated that crystal defects and strain resulting from Be implantation were still existent after PLA, which probably degraded the carrier mobility and limited the activation efficiency to some extent. This can be attributed to the shallow penetration depth of the 248 nm laser in GaN, which only repaired the crystal defects in a thin near-surface layer, while the deeper defects were not annealed out well. This situation was significantly improved when the Be-implanted GaN was subjected to a combined process of PLA followed by RTA, which produced good activation of the dopants, good surface morphology, and repaired bulk and surface defects well.

  14. A Carnegie Doctoral-Research University Statesboro, GA Office of Strategic Research

    E-Print Network [OSTI]

    Hutcheon, James M.

    of Strategic Research and Analysis (OSRA) July 19, 2011 Project Request: Fall 2011 After-graduation Plans February 20, 2012 Office of Career Services Fall 2011 After-graduation Plans Survey Report Survey Fall 2011 After-graduation Plans Survey Fall 2011, 2/20/2012 Georgia Southern University Office

  15. GaAs-based high temperature electrically pumped polariton laser

    SciTech Connect (OSTI)

    Baten, Md Zunaid; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu; Frost, Thomas; Deshpande, Saniya; Das, Ayan [Center for Photonic and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Lubyshev, Dimitri; Fastenau, Joel M.; Liu, Amy W. K. [IQE, Inc., 119 Technology Drive, Bethlehem, Pennsylvania 18015 (United States)

    2014-06-09T23:59:59.000Z

    Strong coupling effects and polariton lasing are observed at 155?K with an edge-emitting GaAs-based microcavity diode with a single Al{sub 0.31}Ga{sub 0.69}As/Al{sub 0.41}Ga{sub 0.59}As quantum well as the emitter. The threshold for polariton lasing is observed at 90?A/cm{sup 2}, accompanied by a reduction of the emission linewidth to 0.85?meV and a blueshift of the emission wavelength by 0.89?meV. Polariton lasing is confirmed by the observation of a polariton population redistribution in momentum space and spatial coherence. Conventional photon lasing is recorded in the same device at higher pump powers.

  16. Simulation of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors performances: Limiting factors and optimum design

    SciTech Connect (OSTI)

    MONIER,C.; REN,F.; HAN,JUNG; CHANG,PING-CHIH; SHUL,RANDY J.; LEE,K.P.; ZHANG,A.P.; BACA,ALBERT G.; PEARTON,S.J.

    2000-04-25T23:59:59.000Z

    The performance capabilities of Npn and Pnp AlGaN/GaN heterojunction bipolar transistors have been investigated by using a drift-diffusion transport model. Numerical results have been employed to study the effect of the p-type Mg doping and its incomplete ionization on device performance. The high base resistance induced by the deep acceptor level is found to be the cause of limited current gain values for Npn devices. Several computation approaches have been considered to improve their performance. Reasonable improvement of the DC current gain {beta} is observed by realistically reducing the base thickness in accordance with processing limitations. Base transport enhancement is also predicted by the introduction of a quasi-electric field in the base. The impact of the base resistivity on high-frequency characteristics is investigated for Npn AlGaN/GaN devices. Optimized predictions with maximum oscillation frequency value as high as f{sub MAX} = 20 GHz and a unilateral power gain--U = 25 dB make this bipolar GaN-based technology compatible with communication applications. Simulation results reveal that the restricted amount of free carriers from the p-doped emitter limits Pnp's DC performances operating in common emitter configuration. A preliminary analysis of r.f. characteristics for the Pnp counterpart indicates limited performance mainly caused by the degraded hole mobility.

  17. Georgia Tech's Faculty/Staff Newspaper Vol. 40, No. 6 November 10, 2014 w w w . w h i s t l e . g a t e c h . e d u

    E-Print Network [OSTI]

    Goodisman, Michael

    to rid an area on campus of kudzu, Georgia Tech is hosting several four-legged, woolly friends over manage vegetation is a very sustainable and effective solution for keeping kudzu under control," said Anne Boykin-Smith of Capital Planning and Space Management (CPSM). "The sheep love to eat kudzu. But

  18. Free-Piston Engine Compressor Georgia Institute ofTechnology | Milwaukee School of Engineering | North Carolina A&T State University | Purdue University | University of Illinois, Urbana-Champaign | University of Minnesota |Vanderbilt University

    E-Print Network [OSTI]

    Barth, Eric J.

    Free-Piston Engine Compressor Georgia Institute ofTechnology | Milwaukee School of Engineering Dynamic Model-Based Design Free Piston Engine Compressor Prof. Eric J. Barth, Joel A. Willhite, Chao Yong piston (Inertia/inertance, stiffness, damping) ­ Valve sizing and required speeds of response scce WWWW

  19. Simple intrinsic defects in GaAs : numerical supplement.

    SciTech Connect (OSTI)

    Schultz, Peter Andrew

    2012-04-01T23:59:59.000Z

    This Report presents numerical tables summarizing properties of intrinsic defects in gallium arsenide, GaAs, as computed by density functional theory. This Report serves as a numerical supplement to the results published in: P.A. Schultz and O.A. von Lilienfeld, 'Simple intrinsic defects in GaAs', Modelling Simul. Mater. Sci Eng., Vol. 17, 084007 (2009), and intended for use as reference tables for a defect physics package in device models. The numerical results for density functional theory calculations of properties of simple intrinsic defects in gallium arsenide are presented.

  20. AlP/GaP distributed Bragg reflectors

    SciTech Connect (OSTI)

    Emberger, Valentin; Hatami, Fariba; Ted Masselink, W. [Department of Physics, Humboldt-Universitaet zu Berlin, Newtonstrasse 15, D-12489 Berlin (Germany); Peters, Sven [Sentech Instruments GmbH, Schwarzschildstr. 2, 12489 Berlin (Germany)

    2013-07-15T23:59:59.000Z

    Distributed Bragg reflectors with high reflectivity bands centered at wavelengths from 530 to 690 nm (green to red) based on AlP/GaP quarter-wave stacks are prepared on (001)GaP using gas-source molecular-beam epitaxy. Additionally, the complex refractive index of AlP is measured using spectroscopic ellipsometry within the range of 330-850 nm in order to facilitate an accurate reflector design. Structures consisting of 15 quarter-wave stacks reach a peak reflectance between 95% and 98%, depending on the spectral position of the maximum.

  1. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18T23:59:59.000Z

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  2. Corrosion-induced degradation of GaAs PHEMTs under operation in high humidity conditions

    E-Print Network [OSTI]

    Hisaka, Takayuki

    We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity ...

  3. Electric field engineering in GaN high electron mobility transistors

    E-Print Network [OSTI]

    Zhao, Xu, S.M. Massachusetts Institute of Technology

    2008-01-01T23:59:59.000Z

    In the last few years, AlGaN/GaN high electron mobility transistors (HEMTs) have become the top choice for power amplification at frequencies up to 20 GHz. Great interest currently exists in industry and academia to increase ...

  4. Site-controlled fabrication of Ga nanodroplets by focused ion beam

    SciTech Connect (OSTI)

    Xu, Xingliang; Wang, Zhiming M., E-mail: zhmwang@gmail.com [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Wu, Jiang; Li, Handong; Zhou, Zhihua [State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Wang, Xiaodong [Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China)

    2014-03-31T23:59:59.000Z

    Ga droplets are created by focused ion beam irradiation of GaAs surface. We report that ordered Ga droplets can be formed on the GaAs surface without any implantation damage. The droplets are characterized with bigger sizes than those droplets formed on damaged area. These aligned Ga droplets are formed via the migration of Ga atoms from ion irradiation area to the edge of undamaged GaAs surface and further nucleation into droplets. The morphological evolution and size distribution of these nanodroplets are investigated systematically with different beam irradiation time and incident angles. Based on this method, well positioned Ga nanodroplets, such as chains, are achieved by using focus ion beam patterning. The controllable assembly of droplets on undamaged semiconductor surface can be used to fabricate templates, to fabricate quantum structures and quantum devices by droplet epitaxy technique.

  5. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01T23:59:59.000Z

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  6. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  7. High performance double pulse doped pseudomorphic AlGaAs/InGaAs transistors grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Hoke, W.E.; Lyman, P.S.; Labossier, W.H.; Brierley, S.K.; Hendriks, H.T.; Shanfield, S.R.; Aucoin, L.M.; Kazior, T.E. [Raytheon Research Division, Lexington, MA (United States)] [Raytheon Research Division, Lexington, MA (United States)

    1992-05-01T23:59:59.000Z

    Double pulse doped AlGaAs/InGaAs pseudomorphic high electron mobility transistors have been grown by molecular-beam epitaxy on GaAs substrates. Hall mobilities in excess of 7100 cm{sup 2}/V s at 300 K and 25000 cm{sup 2}/V s at 77 K are obtained with a sheet density of 3 x 10{sup 12} cm{sup {minus}2}. Photoluminescence measurements indicate that two electronic subbands are occupied, and the subband energies are determined. The doping pulses are resolved in secondary ion mass spectrometry measurements. Using a double recess process, transistors have been fabricated that have produced state of the art microwave performance. At 10 GHz a 1.2 mm device has simultaneously achieved a power added efficiency of 70%, output power of 0.97 W, and gain of 10 dB. 17 refs., 5 figs., 1 tab.

  8. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, 2-6 Yamadaoka, Suita, Osaka 565-0871 (Japan); Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel [National Institute of Physics, University of the Philippines, Diliman, Quezon City 1101 (Philippines); Garcia, Alipio [Department of Physical Sciences, University of the Philippines, Baguio City 2600 (Philippines)

    2009-06-08T23:59:59.000Z

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  9. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G., E-mail: ngyoung@engineering.ucsb.edu; Farrell, R. M.; Iza, M.; Speck, J. S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Perl, E. E.; Keller, S. [Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States); Bowers, J. E.; Nakamura, S.; DenBaars, S. P. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)

    2014-04-21T23:59:59.000Z

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  10. Degradation of InGaN/GaN laser diodes investigated by micro-cathodoluminescence and micro-photoluminescence

    SciTech Connect (OSTI)

    Meneghini, M., E-mail: matteo.meneghini@dei.unipd.it; Carraro, S.; Meneghesso, G.; Trivellin, N.; Zanoni, E. [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy)] [Department of Information Engineering, University of Padova, via Gradenigo 6/B, 35131 Padova (Italy); Mura, G. [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy)] [University of Cagliari, Piazza d'Armi, 09123 Cagliari (Italy); Rossi, F.; Salviati, G. [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy)] [IMEM-National Council of Research, Parco Area delle Scienze 37/A, 43124 Parma (Italy); Holc, K.; Weig, T.; Wagner, J. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany)] [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); Schade, L.; Karunakaran, M. A. [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)] [IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany); Schwarz, U. T. [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany) [Fraunhofer Institute for Applied Solid State Physics IAF, Tullastraße 72, 79108 Freiburg (Germany); IMTEK, Freiburg University, Georges-Köhler-Allee 103 D, 79110 Freiburg (Germany)

    2013-12-02T23:59:59.000Z

    We present an investigation of the degradation of InGaN/GaN laser diodes grown on a GaN substrate. The results indicate that: (i) Ageing induces a significant increase in the threshold current (Ith) of the lasers, which is attributed to an increase in non-radiative recombination; (ii) Ith increase is correlated to a decrease in the micro-cathodoluminescence signal measured (after the removal of the top metallization) in the region under the ridge; (iii) micro-photoluminescence measurements indicate that constant current stress increases non-radiative recombination within the quantum wells (and not only within the barriers), and induces an increase in the emission wavelength of the degraded region.

  11. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O., E-mail: omalis@purdue.edu [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Shao, J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Shirazi-HD, M. [Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, M. J. [Physics Department, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

    2014-07-14T23:59:59.000Z

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  12. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27T23:59:59.000Z

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  13. Spin dependent transport properties of Mn-Ga/MgO/Mn-Ga magnetic tunnel junctions with metal(Mg, Co, Cr) insertion layer

    SciTech Connect (OSTI)

    Liang, S. H.; Tao, L. L.; Liu, D. P., E-mail: dpliu@iphy.ac.cn; Han, X. F., E-mail: xfhan@iphy.ac.cn [State Key Laboratory of Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Lu, Y. [Institut Jean Lamour, UMR 7198, CNRS-Nancy Université, BP 239, 54506 Vandoeuvre (France)

    2014-04-07T23:59:59.000Z

    We report a first principles theoretical investigation of spin polarized quantum transport in Mn{sub 2}Ga/MgO/Mn{sub 2}Ga and Mn{sub 3}Ga/MgO/Mn{sub 3}Ga magnetic tunneling junctions (MTJs) with the consideration of metal(Mg, Co, Cr) insertion layer effect. By changing the concentration of Mn, our calculation shows a considerable disparity in transport properties: A tunneling magnetoresistance (TMR) ratio of 852% was obtained for Mn{sub 2}Ga-based MTJs, however, only a 5% TMR ratio for Mn{sub 3}Ga-based MTJs. In addition, the influence of insertion layer has been considered in our calculation. We found the Co insertion layer can increase the TMR of Mn{sub 2}Ga-based MTJ to 904%; however, the Cr insertion layer can decrease the TMR by 668%; A negative TMR ratio can be obtained with Mg insertion layer. Our work gives a comprehensive understanding of the influence of different insertion layer in Mn-Ga based MTJs. It is proved that, due to the transmission can be modulated by the interfacial electronic structure of insertion, the magnetoresistance ratio of Mn{sub 2}Ga/MgO/Mn{sub 2}Ga MTJ can be improved by inserting Co layer.

  14. Tunneling and nonlinear transport in a vertically coupled GaAs/AlGaAs double quantum wire system.

    SciTech Connect (OSTI)

    Seamons, John Andrew; Lilly, Michael Patrick; Reno, John Louis; Bielejec, Edward Salvador

    2004-11-01T23:59:59.000Z

    We report low-dimensional tunneling in an independently contacted vertically coupled quantum wire system. This nanostructure is fabricated in a high quality GaAs/AlGaAs parallel double quantum well heterostructure. Using a unique flip chip technique to align top and bottom split gates to form low-dimensional constrictions in each of the independently contacted quantum wells we explicitly control the subband occupation of the individual wires. In addition to the expected two-dimensional (2D)-2D tunneling results, we have found additional tunneling features that are related to the one-dimensional quantum wires.

  15. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE/HRL Labs; Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01T23:59:59.000Z

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  16. Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a

    E-Print Network [OSTI]

    Woodall, Jerry M.

    Drift dominated InP/GaP photodiodes Yanning Sun a,*, Aristo Yulius a , Guohua Li b , Jerry MP photodiodes fabricated on GaP substrate with unique drift dominated design, which can build an electric field throughout the active region by varying the doping concentration. The InP/GaP photodiodes have been grown

  17. DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS

    E-Print Network [OSTI]

    Sites, James R.

    DISSERTATION DEVICE PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Submitted by Markus Gloeckler PHYSICS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS BE ACCEPTED AS FULFILLING IN PART REQUIREMENTS OF Cu(In,Ga)Se2 THIN-FILM SOLAR CELLS Thin-film solar cells have the potential to be an important

  18. Hexagonal Growth Spirals on GaN Grown by Molecular Beam Epitaxy: Kinetics vs Thermodynamics

    E-Print Network [OSTI]

    Cohen, Philip I.

    prepared, Ga-polar GaN(0001) templates. The surface morphology was studied using reflection high-energy-edge energy of 0.26 eV/Ã?. They suggest that local conditions at step edges dominate the growth. 1 conducted ex situ using AFM. Desorption mass spectrometry (DMS) was used to measure the GaN growth rate. Our

  19. Surface plasmon enhanced InGaN light emitter Koichi Okamoto*a

    E-Print Network [OSTI]

    Okamoto, Koichi

    is a very promising method for developing the super bright light emitting diodes (LEDs). Moreover, we foundGaN/GaN, light emitting diode, quantum well, internal quantum efficiency, solid-state light source 1. INTRODUCTION Since 1993, InGaN quantum wells (QW)-based light emitting diodes (LEDs) have been continuously

  20. TESLA-FEL 2007-03 Application of low cost GaAs LED as neutron

    E-Print Network [OSTI]

    neutrons in unbiased Gallium Arsenide (GaAs) Light Emitting Diodes (LED) resulted in a reduction Keywords: COTS components, Displacement damage, Electron Linear Accelerator, GaAs Light emitting diode (LED) Gallium Arsenide (GaAs) light emitting diode (LED) for the assessment of integrated neutron fluence

  1. Free carrier induced spectral shift for GaAs filled metallic hole arrays

    E-Print Network [OSTI]

    New Mexico, University of

    . Soref, and J. A. D. Alamo, "Carrier-induced change in refractive index of InP, GaAs, and InGaAsP," IEEE-photon absorption (3PA) assisted by strongly enhanced local fields, reduce the refractive index of GaAs in ~200-nm thick active area through band filling and free carrier absorption. Therefore, the surface plasma wave

  2. Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy

    E-Print Network [OSTI]

    Myers, Tom

    Controlled oxygen doping of GaN using plasma assisted molecular-beam epitaxy A. J. Ptak, L. J-assisted molecular-beam epitaxy to study the dependence of oxygen incorporation on polarity and oxygen partial pressure. Oxygen incorporates at a rate ten times faster on nitrogen-polar GaN than on the Ga polarity

  3. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W. [Univ. of Florida, Gainesville, FL (United States)] [and others

    1996-04-01T23:59:59.000Z

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  4. 1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical

    E-Print Network [OSTI]

    Iosup, Alexandru

    1ACM SIGCSE'14, Atlanta, GA Using Gamification in Technical Higher Education: An XP Report. Epema, An Experience Report on Using Gamification in Technical Higher Education, ACM SIGCSE'14. http's not you, it's me · New ambition of GamificationU (Top-20 Eng/Tech*) ·

  5. Ohmic contacts to p-type GaP

    E-Print Network [OSTI]

    Jorge Estevez, Humberto Angel

    1996-01-01T23:59:59.000Z

    thickness used in this scheme. The samples were annealed for I @n at temperatures ranging from 3 5 0 to 4 5 0 'C. Lower values of the contact resistivity than those of the Si/Pd/Zn/Pd/p-GaP scheme were achieved by depositing an Aluminum layer on the top...

  6. Gallium Arsenide (GaAs) EDWARD D. PALIK

    E-Print Network [OSTI]

    Pulfrey, David L.

    constants of pure (semi-insulating) GaAs are derived from a number of papers including the far-infrared at. [4]; the near-IR work of Pikhtin and Yas'kov [5]; the calorim- etry work of Christensen et al. [6 reflection work of Philipp and Ehrenreich [9]; and the synchrotron transmission work of Cardona et al. [10

  7. Theory of weak localization in ferromagnetic (Ga,Mn)As

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01T23:59:59.000Z

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  8. Response of GaAs to fast intense laser pulses

    E-Print Network [OSTI]

    Graves, JS; Allen, Roland E.

    1998-01-01T23:59:59.000Z

    Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight...

  9. Recombination in Low-Bandgap InGaAs

    SciTech Connect (OSTI)

    Gfroerer, T. H.; Wanlass, M. W.

    2006-01-01T23:59:59.000Z

    We review our investigation of recombination in In{sub x}Ga{sub 1-x}As with indium concentrations ranging between x=0.53 (i.e., lattice-matched to InP) and x=0.78. External radiative efficiency measurements were used to study how defect-related and Auger mechanisms compete with radiative recombination. The results indicated that deep mid-gap levels facilitate defect-related recombination in lattice-matched InGaAs while shallower levels play a more important role in the indium-rich alloys. Subsequent sub-bandgap photoluminescence measurements confirmed the presence of deep levels in the lattice-matched InGaAs. The superlinear excitation dependence of the sub-gap emission led to a defect-related deep-donor/shallow-acceptor pair model. Recent cathodoluminescence measurements of the subgap transitions show no spatial contrast, supporting the assignment of this mechanism to evenly distributed point defects. We hypothesize that the deep states observed in lattice-matched InGaAs are related to imperfections in the incorporation of indium or gallium, which become less likely as the indium concentration is increased.

  10. Ballistic thermal point contacts made of GaAs nanopillars

    SciTech Connect (OSTI)

    Bartsch, Th.; Wetzel, A.; Sonnenberg, D.; Schmidt, M.; Heyn, Ch.; Hansen, W. [Institut für Angewandte Physik und Zentrum für Mikrostrukturforschung, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

    2013-12-04T23:59:59.000Z

    We measure the thermal conductance of GaAs pillars that are only a few nanometers long. Our observations can be understood with a simple model, in which the pillars constitute thermal point contacts between 3D phonon reservoirs. Moreover, first measurements of the electronic transport through these pillars are presented.

  11. GA Tech Campus Emergency Response Team STANDARD OPERATING PROCEDURE

    E-Print Network [OSTI]

    GA Tech Campus Emergency Response Team GT-CERT STANDARD OPERATING PROCEDURE 09/29/2010 #12;2 Table as a condition for the appointment and continuing maintenance of membership. GT-CERT members operate for and to respond to emergency/disaster situations. 2.0 Purpose To establish procedures for the activation

  12. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01T23:59:59.000Z

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  13. Business address : Athens University of Economics and Business 76, Patision St., 104 34, Athens

    E-Print Network [OSTI]

    Chatziantoniou, Damianos

    the Impact of ,,Liberalisation on Auditor Behaviour: Accounting Research in Politically Charged Contexts of Liberalisation on Auditor Behaviour", European Accounting Review (ABS 3), 1997, Vol. 6: 1, 1997, pp. 85

  14. Substrate-dependent wetting layer formation during GaN growth: Impact on the morphology of the films

    SciTech Connect (OSTI)

    Sidorenko, A.; Peisert, H.; Neumann, H.; Chasse, T. [Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany); Leibniz-Institut fuer Oberflaechenmodifizierung e.V. Permoserstrasse 15, D-04318 Leipzig (Germany); Universitaet Tuebingen, Institut fuer Physikalische und Theoretische Chemie, Auf der Morgenstelle 8, D-72076 Tuebingen (Germany)

    2007-08-15T23:59:59.000Z

    We have compared epitaxial growth of GaN films on 6H-SiC(0001)-({radical}(3)x{radical}(3))R30 deg. -Ga and on (0001)-sapphire. Predeposited Ga layers were nitrided by ion beam assisted molecular beam epitaxy. Whereas on SiC the initially deposited Ga covers the substrate surface completely, on sapphire only Ga droplets are present. The different distribution of the predeposited Ga affects the morphology of GaN significantly. Scanning electron microscopy and atomic force microscopy analysis of the grown films show that the complete wetting of the SiC substrate with Ga enhances finally the size and the flatness of GaN terraces and thus the quality of the film. X-ray photoelectron spectroscopy measurements reveal that metallic Ga resides also on top of the GaN films during the growth.

  15. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28T23:59:59.000Z

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  16. Determination of subband energies and 2DEG characteristics of Al{sub x}Ga{sub 1?x}N/GaN heterojunctions using variational method

    SciTech Connect (OSTI)

    Manouchehri, Farzin; Valizadeh, Pouya; Kabir, M. Z., E-mail: kabir@encs.concordia.ca [Department of Electrical and Computer Engineering, Concordia University, Montreal, H3G 1M8 (Canada)

    2014-03-15T23:59:59.000Z

    A physics-based model based on the variational method for analyzing the two dimensional electron gas (2DEG) characteristics of polar AlGaN/GaN heterojunctions is developed. The 2DEG carrier concentration, the first and second energy subbands, and the position of the Fermi energy level are calculated for various barrier thicknesses, Al mole fractions, background dopant concentrations, and gate voltages for gated AlGaN/GaN heterojunctions. The results are in good agreement with the data reported based on self-consistent method. Whereas the aforementioned report has dealt with specific values of Al mole fraction, barrier thickness, and unintentional doping level, the present work provides a basis for calculating the 2DEG characteristics for the full range of these parameters. Furthermore, according to the proposed model, the applicability of the triangular approximation of the quantum well in AlGaN/GaN heterojunctions is evaluated.

  17. Ultrasensitive detection of Hg{sup 2+} using oligonucleotide-functionalized AlGaN/GaN high electron mobility transistor

    SciTech Connect (OSTI)

    Cheng, Junjie [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China); Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Li, Jiadong; Miao, Bin; Wu, Dongmin, E-mail: dmwu2008@sinano.ac.cn [i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wang, Jine; Pei, Renjun, E-mail: rjpei2011@sinano.ac.cn [Division of Nanobiomedicine, Key Laboratory for Nano-Bio Interface Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Wu, Zhengyan, E-mail: zywu@ipp.ac.cn [Key Laboratory of Ion Beam Bioengineering, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031 (China)

    2014-08-25T23:59:59.000Z

    An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg{sup 2+}. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg{sup 2+} and thymines were combined. The current response of this Hg{sup 2+} ultrasensitive transistor was characterized. The current increased due to the accumulation of Hg{sup 2+} ions on the surface by the highly specific thymine-Hg{sup 2+}-thymine recognition. The dynamic linear range for Hg{sup 2+} detection has been determined in the concentrations from 10{sup ?14} to 10{sup ?8} M and a detection limit below 10{sup ?14} M level was estimated, which is the best result of AlGaN/GaN HEMT biosensors for Hg{sup 2+} detection till now.

  18. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09T23:59:59.000Z

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  19. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16T23:59:59.000Z

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  20. Projected Performance of Three- and Four-Junction Devices Using GaAs and GaInP

    E-Print Network [OSTI]

    Gainp; S. R. Kurtz; Sarah R. Kurtz; D. Myers; D. Myers; J.M. Olson; J. M. Olson

    1997-01-01T23:59:59.000Z

    This paper explores the efficiencies expected for three- and four-junction devices for both space and terrestrial applications. For space applications, the effects of temperature and low concentration are investigated. For terrestrial applications, a concentration of 500 suns is assumed and the theoretical efficiencies are calculated as a function of spectral variations including the effects of air mass, turbidity, and water-vapor content. INTRODUCTION Ga 0.5 In 0.5 P/GaAs two-terminal, two-junction solar cells, invented and developed at the National Renewable Energy Laboratory, are in production at both TECSTAR and Spectrolab. The immediate market for these devices is in space; a future (potentially larger) market is terrestrial concentrator systems. The next-generation cells will add additional junction(s) in order to increase the efficiency. Work on a three-junction cell using an active Ge junction under the Ga 0.5 In 0.5 P/GaAs dual-junction cell has already been reported [1]. Ho...

  1. Electrical, thermal, and species transport properties of liquid eutectic Ga-In and Ga-In-Sn from first principles

    SciTech Connect (OSTI)

    Yu, Seungho; Kaviany, Massoud, E-mail: kaviany@umich.edu [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)] [Department of Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109 (United States)

    2014-02-14T23:59:59.000Z

    Using ab initio molecular dynamics, the atomic structure and transport properties of eutectic Ga-In and Ga-In-Sn are investigated. The Kubo-Greenwood (K-G) and the Ziman-Faber (Z-F) formulations and the Wiedemann-Franz (W-F) law are used for the electrical and electronic thermal conductivity. The species diffusivity and the viscosity are also predicted using the mean square displacement and the Stokes-Einstein (S-E) relation. Alloying Ga causes more disordered structure, i.e., broadening the atomic distance near the In and Sn atoms, which reduces the transport properties and the melting temperature. The K-G treatment shows excellent agreement with the experimental results while Z-F treatment formula slightly overestimates the electrical conductivity. The predicted thermal conductivity also shows good agreement with the experiments. The species diffusivity and the viscosity are slightly reduced by the alloying of Ga with In and Sn atoms. Good agreements are found with available experimental results and new predicted transport-property results are provided.

  2. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Liu, L. [University of Florida, Gainesville; Xi, Y. Y. [University of Florida, Gainesville; Wang, Y.l. [University of Florida; Ren, F. [University of Florida; Pearton, S. J. [University of Florida; Kim, H.-Y. [Korea University; Kim, J. [Korea University; Fitch, Robert C [Air Force Research Laboratory, Wright-Patterson AFB, OH; Walker, Dennis E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Chabak, Kelson D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Gillespie, James k [Air Force Research Laboratory, Wright-Patterson AFB, OH; Tetlak, Stephen E [Air Force Research Laboratory, Wright-Patterson AFB, OH; Via, Glen D [Air Force Research Laboratory, Wright-Patterson AFB, OH; Crespo, Antonio [Air Force Research Laboratory, Wright-Patterson AFB, OH; Kravchenko, Ivan I [ORNL

    2013-01-01T23:59:59.000Z

    The effects of proton irradiation energy on dc, small signal, and large signal rf characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. AlGaN/GaN HEMTs were irradiated with protons at fixed fluence of 51015/cm2 and energies of 5, 10, and 15 MeV. Both dc and rf characteristics revealed more degradation at lower irradiation energy, with reductions of maximum transconductance of 11%, 22%, and 38%, and decreases in drain saturation current of 10%, 24%, and 46% for HEMTs exposed to 15, 10, and 5MeV protons, respectively. The increase in device degradation with decreasing proton energy is due to the increase in linear energy transfer and corresponding increase in nonionizing energy loss with decreasing proton energy in the active region of the HEMTs. After irradiation, both subthreshold drain leakage current and reverse gate current decreased more than 1 order of magnitude for all samples. The carrier removal rate was in the range 121 336 cm1 over the range of proton energies employed in this study

  3. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M., E-mail: marcin.bialek@fuw.edu.pl; Witowski, A. M.; Grynberg, M.; ?usakowski, J. [Faculty of Physics, University of Warsaw, ul. Ho?a 69, 00-681 Warsaw (Poland); Orlita, M.; Potemski, M. [Laboratoire National des Champs Magnetiques Intenses, CNRS-UJF-UPS-INSA, 25, avenue des Martyrs, 38042 Grenoble (France); Czapkiewicz, M. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Wróbel, J. [Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw (Poland); Faculty of Mathematics and Natural Sciences, Rzeszów University, al. Rejtana 16A, 35-959 Rzeszów (Poland); Umansky, V. [Weizmann Institute of Science, Rehevot 76100 (Israel)

    2014-06-07T23:59:59.000Z

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  4. Georgia Nuclear Profile - Vogtle

    U.S. Energy Information Administration (EIA) Indexed Site

    vnd.ms-excel" 2,"1,152","9,363",92.8,"PWR","applicationvnd.ms-excel","applicationvnd.ms-excel" ,"2,302","19,610",97.2 "Data for 2010" "PWR Pressurized Light Water Reactor."...

  5. Coastal Management Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Coastal Management Act provides enabling authority for the State to prepare and administer a coastal management program. The Act does not establish new regulations or laws; it is designed to...

  6. Georgia Natural Gas Summary

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia,(Million Barrels) Crude Oil Reserves in Nonproducing Reservoirs U.S.WyomingExpansion 5Wellhead99.6Year Jan FebYear

  7. Enterprise Zone Program (Georgia)

    Broader source: Energy.gov [DOE]

    The Enterprise Zone Program provides various tax incentives to businesses within designated underdeveloped zones in rural or urban areas. The State Enterprise Zone program intends to improve...

  8. Georgia Natural Gas Prices

    Gasoline and Diesel Fuel Update (EIA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) " ,"ClickPipelines About U.S.30Natural Gas Glossary529 6330 0 1 0 058.5 57.1 54.8IndustrialThousand

  9. RECONNAISSANCE ASSESSMENT OF CO2 SEQUESTRATION POTENTIAL IN THE TRIASSIC AGE RIFT BASIN TREND OF SOUTH CAROLINA, GEORGIA, AND NORTHERN FLORIDA

    SciTech Connect (OSTI)

    Blount, G.; Millings, M.

    2011-08-01T23:59:59.000Z

    A reconnaissance assessment of the carbon dioxide (CO{sub 2}) sequestration potential within the Triassic age rift trend sediments of South Carolina, Georgia and the northern Florida Rift trend was performed for the Office of Fossil Energy, National Energy Technology Laboratory (NETL). This rift trend also extends into eastern Alabama, and has been termed the South Georgia Rift by previous authors, but is termed the South Carolina, Georgia, northern Florida, and eastern Alabama Rift (SGFAR) trend in this report to better describe the extent of the trend. The objectives of the study were to: (1) integrate all pertinent geologic information (literature reviews, drilling logs, seismic data, etc.) to create an understanding of the structural aspects of the basin trend (basin trend location and configuration, and the thickness of the sedimentary rock fill), (2) estimate the rough CO{sub 2} storage capacity (using conservative inputs), and (3) assess the general viability of the basins as sites of large-scale CO{sub 2} sequestration (determine if additional studies are appropriate). The CO{sub 2} estimates for the trend include South Carolina, Georgia, and northern Florida only. The study determined that the basins within the SGFAR trend have sufficient sedimentary fill to have a large potential storage capacity for CO{sub 2}. The deeper basins appear to have sedimentary fill of over 15,000 feet. Much of this fill is likely to be alluvial and fluvial sedimentary rock with higher porosity and permeability. This report estimates an order of magnitude potential capacity of approximately 137 billion metric tons for supercritical CO{sub 2}. The pore space within the basins represent hundreds of years of potential storage for supercritical CO{sub 2} and CO{sub 2} stored in aqueous form. There are many sources of CO{sub 2} within the region that could use the trend for geologic storage. Thirty one coal fired power plants are located within 100 miles of the deepest portions of these basins. There are also several cement and ammonia plants near the basins. Sixteen coal fired power plants are present on or adjacent to the basins which could support a low pipeline transportation cost. The current geological information is not sufficient to quantify specific storage reservoirs, seals, or traps. There is insufficient hydrogeologic information to quantify the saline nature of the water present within all of the basins. Water data in the Dunbarton Basin of the Savannah River Site indicates dissolved solids concentrations of greater than 10,000 parts per million (not potential drinking water). Additional reservoir characterization is needed to take advantage of the SGFAR trend for anthropogenic CO{sub 2} storage. The authors of this report believe it would be appropriate to study the reservoir potential in the deeper basins that are in close proximity to the current larger coal fired power plants (Albany-Arabi, Camilla-Ocilla, Alamo-Ehrhardt, and Jedburg basin).

  10. Ultra High p-doping Material Research for GaN Based Light Emitters

    SciTech Connect (OSTI)

    Vladimir Dmitriev

    2007-06-30T23:59:59.000Z

    The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading in light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.

  11. Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

    SciTech Connect (OSTI)

    Christy, Dennis; Watanabe, Arata; Egawa, Takashi [Research Center for Nano-Device and System, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan)

    2014-10-15T23:59:59.000Z

    The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

  12. GaAsSb-based heterojunction tunnel diodes for tandem solar cell interconnects

    SciTech Connect (OSTI)

    Zolper, J.C.; Klem, J.F.; Plut, T.A.; Tigges, C.P.

    1995-01-01T23:59:59.000Z

    We report a new approach to tunnel junctions that employs a pseudomorphic GaAsSb layer to obtain a band alignment at a InGaAs or InAlAs p-n junction favorable for forward bias tunneling. Since the majority of the band offset between GaAsSb and InGaAs or InAlAs is in the valence band, when an GaAsSb layer is placed at an InGaAs or InAlAs p-n junction the tunneling distance is reduced and the tunneling current is increased. For all doping levels studied, the presence of the GaAsSb-layer enhanced the forward tunneling characteristics. In fact, in a InGaAs/GaAsSb tunnel diode a peak tunneling current sufficient for a 1000 sun intercell interconnect was achieved with p = 1.5{times}l0{sup 18} cm{sup -3} while a similarly doped all-InGaAs diode was rectifying. This approach affords a new degree of freedom in designing tunnel junctions for tandem solar cell interconnects. Previously only doping levels could be varied to control the tunneling properties. Our approach relaxes the doping requirements by employing a GaAsSb-based heterojunction.

  13. Bending properties of epoxy resin matrix composites filled with NiMnGa ferromagnetic shape memory alloy powders

    E-Print Network [OSTI]

    Zheng, Yufeng

    Bending properties of epoxy resin matrix composites filled with Ni­Mn­Ga ferromagnetic shape memory­Mn­Ga Composite materials Mechanical properties Microstructure Two types of epoxy resin matrix composites filled­Mn­Ga epoxy resin composites were reported, yet the bending property of Ni­Mn­Ga-polymer smart composites has

  14. INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS

    E-Print Network [OSTI]

    Atwater, Harry

    INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS solar cells using back reflectors. We studied absorption enhancement in InGaAs and InGaAsP thin film and metal, on InGaAs thin film solar cell performance by device modeling and nu- merical simulations. DEVICE

  15. Metal-insulator-semiconductor structures on p-type GaAs with low interface state density

    E-Print Network [OSTI]

    Chen, Zhi

    Metal-insulator-semiconductor structures on p-type GaAs with low interface state density Zhi Chen properties of in situ deposited Si3N4 /Si/p-GaAs metal-insulator-semiconductor structures have been offered by a low gate leakage technology in GaAs, such as metal insulator structures, func- tional Ga

  16. Method of plasma etching Ga-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2012-12-25T23:59:59.000Z

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent to the process chamber. The process chamber contains a sample comprising a Ga-based compound semiconductor. The sample is in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. The method includes flowing SiCl.sub.4 gas into the chamber, flowing Ar gas into the chamber, and flowing H.sub.2 gas into the chamber. RF power is supplied independently to the source electrode and the platen. A plasma is generated based on the gases in the process chamber, and regions of a surface of the sample adjacent to one or more masked portions of the surface are etched to create a substantially smooth etched surface including features having substantially vertical walls beneath the masked portions.

  17. Method of plasma etching GA-based compound semiconductors

    DOE Patents [OSTI]

    Qiu, Weibin; Goddard, Lynford L.

    2013-01-01T23:59:59.000Z

    A method of plasma etching Ga-based compound semiconductors includes providing a process chamber and a source electrode adjacent thereto. The chamber contains a Ga-based compound semiconductor sample in contact with a platen which is electrically connected to a first power supply, and the source electrode is electrically connected to a second power supply. SiCl.sub.4 and Ar gases are flowed into the chamber. RF power is supplied to the platen at a first power level, and RF power is supplied to the source electrode. A plasma is generated. Then, RF power is supplied to the platen at a second power level lower than the first power level and no greater than about 30 W. Regions of a surface of the sample adjacent to one or more masked portions of the surface are etched at a rate of no more than about 25 nm/min to create a substantially smooth etched surface.

  18. Study of reflection and transport in the microwave photo-excited GaAs/AlGaAs two dimensional electron system

    SciTech Connect (OSTI)

    Ye, Tianyu; Mani, Ramesh G. [Department of Physics and Astronomy, Georgia State University, Atlanta GA 30303 (United States); Wegscheider, Werner [Laboratorium für Festkörperphysik, ETH Zürich, 8093 Zürich (Switzerland)

    2013-12-04T23:59:59.000Z

    We present the results of a concurrent experimental study of microwave reflection and transport in the GaAs/AlGaAs two dimensional electron gas system and correlate observed features in the reflection with the observed transport features. The experimental results are compared with expectations based on theory.

  19. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C Richard R. King,2 and Harry A. Atwater1 1 California Institute of Technology, Pasadena, California 91125, USA 2 Spectrolab, Inc., Sylmar, California 91342, USA 3 Aonex Technologies, Pasadena, California 91106

  20. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS Robyn C. Law 1 1 Spectrolab, Inc., A Boeing Company, Sylmar, California 91342, USA 2 California Institute of Technology, Pasadena, California 91125, USA ABSTRACT Spectrolab has demonstrated the first lattice matched In