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Sample records for georgia athens ga

  1. Scientific Basis for Bacterial TMDLs in Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    and Natural Resources University of Georgia, Athens, GA Atlanta, Georgia June 2006 Scientific Basis Advisory Committee as part of the Georgia Statewide Water Planning process. www.gadnr.org/gswp/Documents/info

  2. Li (Lily) Wang Address: 223 Statistics Building, University of Georgia, Athens, GA 30602-7952

    E-Print Network [OSTI]

    Wang, Lily

    ). A nonparametric analysis on the environmental Kuznets curve. Environmetrics, 22(3), 420­430. [9] Liu, X., Wang, L

  3. 190 Ben Burton Road, Suite C Bogart, Georgia 30622 706.354.1800 Fax: 706.354.6867 www.geohydro.com

    E-Print Network [OSTI]

    Arnold, Jonathan

    ) The following table presents seismic design values interpolated from applicable seismic hazard maps from The University of Georgia 382 East Broad Street Athens, Georgia 30602 Revised Report of Probabilistic Seismic probabilistic seismic hazard analysis (PSHA) for the main campus of The University of Georgia in Athens

  4. Georgia and Arkansas Residential Energy Code Field Studies |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GA Partners: - Advanced Energy - Raleigh, NC - Arkansas Economic Development Commission, Energy Office - Little Rock, AR - Georgia Department of Community Affairs - Atlanta, GA -...

  5. City of Athens, Alabama (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company)Arlington, SouthAthens, Alabama

  6. Epidemiologic characteristics of pityriasis rosea in Athens Greece

    E-Print Network [OSTI]

    Kyriakis, Kyriakos P; Palamaras, Ioulios; Terzoudi, Sofia; Pagana, Georgia; Emmanuelides, Smaro; Michailides, Charalambos

    2006-01-01

    of pityriasis rosea in Athens Greece Kyriakos P. Kyriakis,St. Barbara" Athens, Greece. fountou@spark.net.gr Pityriasis

  7. Runoff sources and land cover change in the Amazon: an end-member mixing analysis from small watersheds

    E-Print Network [OSTI]

    of Georgia, Athens, GA 30602, USA M. C. Piccolo Laborato´rio Ciclagem de Nutrients, Centro de Energia Nuclear

  8. NATIONAL TECHNICAL UNIVERSITY OF ATHENS SCHOOL OF CIVIL ENGINEERING

    E-Print Network [OSTI]

    Psarrakos, Panayiotis

    NATIONAL TECHNICAL UNIVERSITY OF ATHENS SCHOOL OF CIVIL ENGINEERING LABORATORY://nanolab.chemeng.ntua.gr/) #12; NATIONAL TECHNICAL UNIVERSITY OF ATHENS SCHOOL OF CIVIL ENGINEERING LABORATORY; NATIONAL TECHNICAL UNIVERSITY OF ATHENS SCHOOL OF CIVIL ENGINEERING LABORATORY FOR EARTHQUAKE

  9. EECBG Success Story: In Savannah, Georgia, Even the Data is Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia, Even the Data is Green May 5, 2011 - 4:49pm Addthis The new energy efficient IT Data Center in Savannah, Georgia. | Courtesy of the City of Savannah, GA. The new energy...

  10. High energy hadron-hadron collisions. [Dept. of Physics and Astronomy, Univ. of Georgia, Athens, Georgia

    SciTech Connect (OSTI)

    Chou, T.T.

    1992-01-01

    Results of a study on high energy collisions with the geometrical model are summarized in three parts: (1) the elastic hadron-hadron collision, (2) the inelastic hadron-hadron collision, and (3) e[sup +]e[sup [minus

  11. Timothy J. Bartness Departments of Biology and Center for Behavioral Neuroscience, Georgia State University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural

    E-Print Network [OSTI]

    Demas, Greg

    University, Atlanta, GA 30303. Gregory E. Demas Department of Biology and Program in Neural Science, Indiana University, Bloomington, IN 47405. Neurobiology of Food and Fluid Intake, 2nd Ed., Volume 14 of Handbook, and from humans, many or most of the fundamental problems in ingestive behavior 423 #12;have not been

  12. Georgia Tech Dangerous Gas

    E-Print Network [OSTI]

    Li, Mo

    1 Georgia Tech Dangerous Gas Safety Program March 2011 #12;Georgia Tech Dangerous Gas Safety.......................................................................................................... 5 6. DANGEROUS GAS USAGE REQUIREMENTS................................................. 7 6.1. RESTRICTED PURCHASE/ACQUISITION RULES: ................................................ 7 7. FLAMMABLE GAS

  13. 2632 WWW.CROPS.ORG CROP SCIENCE, VOL. 50, NOVEMBERDECEMBER 2010 Seashore paspalum is a warm-season turfgrass that is adapted

    E-Print Network [OSTI]

    Parrott, Wayne

    , Univ. of Georgia, Griffin Campus, 1109 Experiment St., Griffin, GA 30223. This research was supported Genetics and Genomics and Dep. of Crop and Soil Sciences, Univ. of Georgia, 111 Riverbend Rd., Athens, GA

  14. A climatology, synoptic assessment, and thermodynamic evaluation for cloud-to-ground lightning in Georgia: a study for the 1996 Summer Olympics 

    E-Print Network [OSTI]

    Livingston, Eric Scott

    1995-01-01

    of Athens, Georgia based on the thermodynamic variables. At the inland locations, no pattern was found in the spatial distribution of cloud-to-ground lightning: the strike locations were random. At the coastal location, an inland maximum in ground flash...

  15. "Title","Creator/Author","Publication Date","OSTI Identifier...

    Office of Scientific and Technical Information (OSTI)

    Genetic analysis of inflorescence and plant height components in sorghum (Panicoidae) and comparative genetics with rice (Oryzoidae)","Zhang, Dong Univ. of Georgia, Athens, GA...

  16. TITLE AUTHORS SUBJECT SUBJECT RELATED DESCRIPTION PUBLISHER AVAILABILI...

    Office of Scientific and Technical Information (OSTI)

    Genetic analysis of inflorescence and plant height components in sorghum Panicoidae and comparative genetics with rice Oryzoidae Zhang Dong Univ of Georgia Athens GA United States...

  17. Library Abridged Georgia Legislative History

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Library Abridged Georgia Legislative History Georgia legislative history research entails looking databases. Print Sources for Georgia Legislative History at the GSU Law Library Journal of the Georgia House of Representatives o Official Account of the legislative history of the Georgia House

  18. Georgia Air Quality Control Act (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Air Quality Control Act (AQCA) is a set of environmental regulations, permitting requirements, and air quality standards that control the amount of pollutants emitted and who emits them...

  19. 1 University of Georgia University of Georgia

    E-Print Network [OSTI]

    Arnold, Jonathan

    th year 0 0 0 0 2nd year 0 6 6 2.6 3rd year 0 0 0 0 1st year 1 6 7 3.7 J.D. Attrition (prior academic1 University of Georgia University of Georgia Can first year start other than fall? No Application Semester The Basics Part-Time $ 0 $ 0 Tuition Guarantee Program No Tuition and Fees (academic year*) Full

  20. Georgia Tech Research Institute The Georgia Tech Research Institute (GTRI) is Georgia Tech's applied

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech Research Institute The Georgia Tech Research Institute (GTRI) is Georgia Tech general funds will further erode its ability to sustain its high level of external funding and its overall

  1. 495 Tech Way NW Atlanta, GA 30318

    E-Print Network [OSTI]

    Li, Mo

    495 Tech Way NW Atlanta, GA 30318 404.385.0384 comments@energy.gatech.edu Copyright 2014 · Georgia concerns, low-cost, clean, secure energy solutions will be necessary to address our global energy needs and sustain our way of life. Georgia Tech Energy Innovations The Strategic Energy Institute's scientists

  2. Athens 1833-1979 : the dynamics of urban growth

    E-Print Network [OSTI]

    Loukopoulos, Dimitris

    1980-01-01

    His thesis deals with the urban development of the city of Athens since its foundation as the capital of the newborn Greek State (1833) , until our days. The study focuses on two particular characteristics that dominate ...

  3. Drosscape and the city : the case of Eleonas in Athens

    E-Print Network [OSTI]

    Samartzopoulos, Georgios

    2014-01-01

    This thesis addresses design strategies for the future development of drosscapes in urban regions and their relation with the city at large, having as an example the district of Eleonas in Athens, Greece. It provides answers ...

  4. The Lakewood Development in Athens, Georgia : Case Study of an EarthCraft Community

    E-Print Network [OSTI]

    Radcliffe, David

    promoted. EarthCraft House guidelines, a 62-page guidebook (Southface 2005), include xeriscaping, rainwater harvesting for irrigation, a minimum of 80% permeable pavement, and control of erosion and sedimentation

  5. Constructionism 2012, Athens, Greece ISBN: 978-960-88298-4-8 RESEARCH REPORT 370

    E-Print Network [OSTI]

    Wilensky, Uri

    Constructionism 2012, Athens, Greece ISBN: 978-960-88298-4-8 RESEARCH REPORT 370 Representational essentially tying the constructed knowledge structures to the game #12;Constructionism 2012, Athens, Greece

  6. Georgia State University Library Handbook

    E-Print Network [OSTI]

    Frantz, Kyle J.

    of Public Health 2015-2016 www.library.gsu.edu #12;Georgia State University Library Research Handbook 2 #12Georgia State University Library Handbook for School of Nursing and Health Professions & School. Learning library skills will benefit you not just in a class while at Georgia State University

  7. Budgeting at Georgia Tech

    E-Print Network [OSTI]

    ­ general revenue from any of the sources below: o State o Tuition o Indirect cost recoveries o Student fees of Georgia Tech's Budget: - Capital Budget - Operating Budget #12;Capital Project Funding Methods Renovations Assembly approval) · Gifts through GT Foundation · Recoveries from sponsored projects · Capital Leases ­ GT

  8. Georgia Comprehensive Solid Waste Management Act of 1990 (Georgia)

    Broader source: Energy.gov [DOE]

    The Georgia Comprehensive Solid Waste Management Act (SWMA) of 1990 was implemented in order to improve solid waste management procedures, permitting processes and management throughout the state. ...

  9. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    of Natural Resources, water and power utilities, environmental organizations and citizen groups, and lake in Water Resource Planning, Aris Georgakakos PI, Georgia Institute of Technology, sponsored by Georgia Assistance for Water Resources Planning in the State of Georgia, Aris Georgakakos PI, Georgia Institute

  10. 2014 Race to Zero Student Design Competition: Georgia Institute...

    Energy Savers [EERE]

    Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia Institute of Technology Profile 2014 Race to Zero Student Design Competition: Georgia...

  11. Athens County, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin: EnergyYork Jump|Line SitingOil andAshtabulaIowa) Jump to:Athens

  12. Georgia Biofuel Directory A directory of Georgia industries that use biofuels.

    E-Print Network [OSTI]

    Georgia Biofuel Directory · A directory of Georgia industries that use biofuels. · Completed in May _________________________________________________________________ 3 Biofuels_____________________________________________________________________ 4 Biofuel Use in Georgia that Burn Self-Generated Biofuels as of May 2003__ 4 Chart 1.0 Biofuel Use from Contacted

  13. Georgia Shore Assistance Act

    SciTech Connect (OSTI)

    Pendergrast, C.

    1984-01-01

    The Georgia General Assembly passed the Shore Assistance Act in 1979 in order to fill a regulatory gap in the state's management of its coastal resources. A review of its legislative history, purposes, applications, and effects in terms of the sand sharing system of sand dunes, beaches, sandbars, and shoals concludes that the Act is poorly drafted. In its application on the oceanfront, it betrays its intent and protects the oceanfront owner. It has failed to satisfy the requirements of the public trust in the tidal foreshore. Amendments to clarify its understanding of the functions and values of the sand-sharing system should also conform with the state's duties under the public trust. 139 references.

  14. Georgia Power- Solar Buyback Program

    Broader source: Energy.gov [DOE]

    Georgia Power, the state's largest utility, has established a green power program, that allows the company to purchase limited solar generation at a premium price based on other customers volunta...

  15. Georgia Southern University Academic Affairs

    E-Print Network [OSTI]

    Hutcheon, James M.

    for Academic Affairs College of Business Administration Information Systems Finance and Economics Logistics and Supply Chain Management College of Education Leadership, Technology, and Human Development Teaching Georgia Center History Institute for Public and Nonprofit Studies Foreign Languages Literature

  16. Georgia Power- Advanced Solar Initiative

    Broader source: Energy.gov [DOE]

    Note: According to Georgia Power's website, the Advanced Solar Initiative's final program guidelines are due to be published on June 25th and the bidding period for is expected to open on July 10,...

  17. University of Georgia 2020 Strategic Plan

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia 2020 Strategic Plan Building on Excellence October 30, 2012 #12;Building.......................................................................................1 Hallmarks of the 2020 Strategic Plan Sustainability.....27 Appendix A. University of Georgia Strategic Planning Committee 2009

  18. Curriculum Vitae: ARNOLD W. SCHUMANN

    E-Print Network [OSTI]

    Balser, Teri C.

    . Beneficial uses of coal combustion byproducts in agriculture. University of Georgia, Athens, GA. M.Sc. 1987 Board, Communications in Soil Science and Plant Analysis 2004 present Soil Science Society of America

  19. West Athens, California: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: Energy Resources Jump to:SearchWesley Hills, New

  20. Georgia Nonprofit Helps Homeowners Save Energy

    Broader source: Energy.gov [DOE]

    Residents in Georgia are living in more comfortable and energy-efficient homes because of this Savannah based weatherization program.

  1. Popular urban settlements in Athens : a comparative study of low income housing

    E-Print Network [OSTI]

    Kitsiou, Triada

    1981-01-01

    This study is concerned with aspects of housing and urban development related to the lower income groups in the context of urbanization in Athens, Greece. It identifies and evaluates typical low income housing settlements ...

  2. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    the University of Georgia Research Foundation, Inc.'s (the "Foundation") compliance with the types of complianceUNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2014 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial

  3. UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC.

    E-Print Network [OSTI]

    Arnold, Jonathan

    the University of Georgia Research Foundation, Inc.'s (the "Foundation") compliance with the types of compliance UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. COMPLIANCE REPORTS For the Year Ended June 30, 2013 #12;UNIVERSITY OF GEORGIA RESEARCH FOUNDATION, INC. TABLE OF CONTENTS Financial Statements

  4. Georgia Southern University Information Technology

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Information Technology Organization Chart 2014-2015 FINAL: August 29, 2014 R:\\Common\\OrgCharts\\Rev 2015 Information Technology \\CIO Produced: Strategic Research & Analysis of the groups of units reporting there. President Vice President for Information Technology and Chief

  5. April 8, 2010 Savannah, Georgia

    E-Print Network [OSTI]

    * Current NCC/TTCC Participating States: 20 Region 1 (2) New York Pennsylvania Region 2 (4) Alabama Georgia-large ­ Tom VanDam, Applied Pavement Tech. (term expires 2010) FHWA ex-officio ­ Gina Ahlstrom, FHWA - DC #12;· State Report Coordinator ­ CP Tech Center · Meeting Notes Recorders and Coordinator ­ CP Tech Center

  6. Georgia State University Library Handbook

    E-Print Network [OSTI]

    Frantz, Kyle J.

    of Public Health 2014-2015 www.library.gsu.edu #12;#12;INTRODUCTION The ability to identify, locate Informatics, Nutrition, Physical Therapy, Public Health & Respiratory Therapy Library South, 5th floor, SuiteGeorgia State University Library Handbook for School of Nursing and Health Professions & School

  7. The new Athens Center applied to Space Weather Forecasting

    SciTech Connect (OSTI)

    Mavromichalaki, H.; Sarlanis, C.; Souvatzoglou, G.; Mariatos, G.; Gerontidou, M.; Plainaki, C.; Papaioannou, A.; Tatsis, S. [University of Athens, Physics Department, Section of Nuclear and Particle Physics, Zografos 15771 Athens (Greece); Belov, A.; Eroshenko, E.; Yanke, V. [IZMIRAN, Russian Academy of Science, 1420092 Moscow (Russian Federation)

    2006-08-25

    The Sun provides most of the initial energy driving space weather and modulates the energy input from sources outside the solar system, but this energy undergoes many transformations within the various components of the solar-terrestrial system, which is comprised of the solar wind, magnetosphere and radiation belts, the ionosphere, and the upper and lower atmospheres of Earth. This is the reason why an Earth's based neutron monitor network can be used in order to produce a real time forecasting of space weather phenomena.Since 2004 a fully functioned new data analysis Center in real-time is in operation in Neutron Monitor Station of Athens University (ANMODAP Center) suitable for research applications. It provides a multi sided use of twenty three neutron monitor stations distributing in all world and operating in real-time given crucial information on space weather phenomena. In particular, the ANMODAP Center can give a preliminary alert of ground level enhancements (GLEs) of solar cosmic rays which can be registered around 20 to 30 minutes before the main part of lower energy particles. Therefore these energetic solar cosmic rays provide the advantage of forth warning. Moreover, the monitoring of the precursors of cosmic rays gives a forehand estimate on that kind of events should be expected (geomagnetic storms and/or Forbush decreases)

  8. GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY ENVIRONMENTAL HEALTH AND SAFETY POLICY Ratified by the Institute Council on Environmental Health and Safety August 2008 POLICY Georgia Institute of Technology (Georgia environmental health and safety laws and regulations; and Demonstrating leadership in pollution prevention

  9. Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Li, Mo

    Updated 11/1/2012 GEORGIA INSTITUTE OF TECHNOLOGY OFFICE OF FINANCIAL SERVICES ADMINSTRATION Cash/Investment Management Debt Management Georgia Tech Facilities, Inc. Georgia Advanced Technology Ventures, Inc. Project Accounting Cost Accounting Rate Studies Negotiations Salary, Planning

  10. Rome folio, Georgia-Alabama 

    E-Print Network [OSTI]

    Hayes, C. W. (Charles Willard), 1859-1916.

    1902-01-01

    Consultant Director, corporate Energy Department Energy ~1anager Manager of Energy Conservation Director of Energy Conservation Manager, corporate Energy Conservation Corporate Energy Coordinator RESULTS During the early part of the study..., Georgia, achieved a payback of less than five months on a system to measure and control allotted natural gas usage (10). With close metering BFG uses less expensive natural gas right up to the allotted supply before switching over to propane...

  11. ,"Georgia Natural Gas LNG Storage Withdrawals (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Withdrawals (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  12. ,"Georgia Natural Gas LNG Storage Additions (MMcf)"

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas LNG Storage Additions (MMcf)",1,"Annual",2014 ,"Release Date:","9302015" ,"Next Release...

  13. Energy Secretary to Visit Georgia Nuclear Reactor Site and Tennessee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Visit Georgia Nuclear Reactor Site and Tennessee Laboratory to Highlight Administration Support for Nuclear Energy Energy Secretary to Visit Georgia Nuclear Reactor Site and...

  14. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia, Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan...

  15. Renewable and Non-Renewable Resources Tariff RNR-7 (Georgia)

    Broader source: Energy.gov [DOE]

    The Renewable and Non-Renewable Resource tariff is authorized by the Georgia Public Service Commission (PSC), which requires that the investor owned utility, Georgia Power Company, purchase...

  16. Engineering vertically aligned InAs/GaAs quantum dot structures via anion exchange

    E-Print Network [OSTI]

    Wang, Zhong L.

    of Technology, Atlanta, GA 30332-0245, USA b School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA Received 17 March 2002; accepted 16 April 2002 by D. Van Dyck Abstract P exchange; D. Stranski­Krastanov (S­K) growth Self-assemble by exploiting the Stranski­Krastanov (S

  17. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    Water Resources Institute GWRI mission is to help improve water resources management in Georgia, the US, Georgia Tech, sponsored by NOAA, the California Energy Commission, and CalFed under grants #2006J04, #2006 and groups with objective facts and information useful in developing a sound and sustainable water resources

  18. Wood Fired Steam Plants in Georgia 

    E-Print Network [OSTI]

    Bulpitt, W. S.

    1983-01-01

    . Shortly after that time, Georgia Tech and the Georgia Forestry Commission embarked on a number of projects directed toward providing the use of wood as an industrial energy source. This paper will present an overview of these programs with an emphasis...

  19. The Athens System for Novel Information Discovery N. Vats D.B. Skillicorn

    E-Print Network [OSTI]

    Graham, Nick

    The Athens System for Novel Information Discovery N. Vats D.B. Skillicorn School of Computing Queen-489 Department of Computing and Information Science Queen's University Kingston, Ontario, Canada K7L 3N6 Document information, that is information whose existence is not suspected or for which suitable descriptors

  20. SYNOPTIC AND MESOSCALE WEATHER CONDITIONS DURING AIR POLLUTION EPISODES IN ATHENS, GREECE

    E-Print Network [OSTI]

    Pielke, Roger A.

    KALLOS (1), PAVLOS KASSOMENOS (1) and ROGER A. P1ELKE (2) (1) UniversityofAthens, Dept. ofApplied Physics portion of their surface is covered by pine forests. There are three hills up to 200 m inside the basin

  1. New Georgia Tech Retirees You are invited to join the

    E-Print Network [OSTI]

    Li, Mo

    INVITATION for New Georgia Tech Retirees You are invited to join the SILVER JACKETS Georgia Tech Retiree Association Stay connected with your Georgia Tech colleagues and friends through meetings, email and special events. Help promote a strong voice for Georgia Tech retirees on issues of interest

  2. MSc STUDY PROGRAMME IN THE FACULTY OF GEOLOGY AND GEOENVIRONMENT, UNIVERSITY OF ATHENS 201314 Geology and Geoenvironment

    E-Print Network [OSTI]

    Kouroupetroglou, Georgios

    MSc STUDY PROGRAMME IN THE FACULTY OF GEOLOGY AND GEOENVIRONMENT, UNIVERSITY OF ATHENS 201314 1 Geology and Geoenvironment MSc Programme STUDENT HANDBOOK Applied Environmental Geology, Stratigraphy Paleontology, Geography and Environment, Dynamic Geology and Tectonics/ Hydrogeology, Geophysics

  3. Central Georgia EMC- Photovoltaic Rebate Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    In June 2008, Central Georgia Electric Membership Corporation (CGEMC) began offering a rebate of $450 per kilowatt (kW) to residential members who install photovoltaic (PV) systems that are...

  4. Georgia Power- Energy Efficiency Home Improvement Rebates

    Broader source: Energy.gov [DOE]

    Georgia Power offers up to $2,575 in rebates to customers who choose to improve home performance with whole building BPI certified efficiency measures or up to $700 for individual improvements from...

  5. Impact of solar activity on climate changes in Athens region, Greece

    E-Print Network [OSTI]

    Gizani, Nectaria A B; Vatikiotis, Leonidas; Zervas, Efthimios

    2011-01-01

    The scope of this work is to study the role that the solar weather plays in terrestrial weather. For this reason we study the effect of the solar activity on the climate changes in Greece. In the current work we look for possible correlation between the solar activity data spanning the years from 1975 to 2000 and the meteorological data from two weather stations based inside the city of Athens, Greece (New Philadelphia) and in greater Athens in the north of Attica (Tatoi area). We examine the annual variations of the average values of six meteorological parameters: temperature, atmospheric pressure, direction and intensity of wind, rainfall and relative air humidity. The solar data include decade variations, within the above period, of the solar irradiance, mean sunspot number between two solar cycles, magnetic cycle influence, and solar UV driving of climate (radio flux).

  6. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Georgia: Data Center and Historic Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can...

  7. Ellijay folio, Georgia-North Carolina-Tennessee 

    E-Print Network [OSTI]

    La Forge, Laurence, 1871-1954.; Phalen, William Clifton, 1877-1949.

    1913-01-01

    During the 1970's, Georgia industry experienced problems obtaining fuel for operations on several occasions. In particular, the very cold winter of 1976-77 resulted in natural gas curtailments which virtually shut down many of Georgia's industries...

  8. Georgia Southern University Organization Chart 2014-2015

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Organization Chart 2014-2015 FINAL: August 29, 2014 R:\\Common\\Org Charts\\Rev2014n\\Georgia Southern Produced: Strategic Research & Analysis/MP NOTE: College of Graduate

  9. Georgia Institute of Technology For more information contact

    E-Print Network [OSTI]

    Nair, Sankar

    as a necessary complement to conventional oil and gas. Biofuel research at Georgia Tech intensified in 2004 Corporation chose Georgia Tech as its first strategic research alliance partner, according to Rick Zalesky Biofuels, the Georgia Research Alliance and one of the U.S. Department of Energy's new BioEnergy Research

  10. URBAN/INDUSTRIAL LAND PRIVATIZATION The Republic of Georgia

    E-Print Network [OSTI]

    Onsrud, Harlan J.

    's economic transformation to a market economy. This is also true of Georgia. By securing title to their land reviewed overall market reform prospects in the Republic of Georgia. The findings indicate that Georgia's market reform lags behind several other New Independent State (NIS) countries. This is largely due

  11. School of Chemistry and Biochemistry Georgia Institute of Technology

    E-Print Network [OSTI]

    Sherrill, David

    Analytical Physical Advanced Labs Analytical Biochemistry Inorganic Organic 4. Indicate the two chemistrySchool of Chemistry and Biochemistry Georgia Institute of Technology Atlanta, Georgia 30332-0400 A Unit of the University System of Georgia TO: B.S. in Chemistry/B.S. in Biochemistry Degree Candidates

  12. On the Minimum Ropelength of Knots and Links Jason Cantarella

    E-Print Network [OSTI]

    Cantarella, Jason

    . Sullivan ¢ £ University of Georgia, Athens, e-mail: cantarel@math.uga.edu¤ University of Massachusetts

  13. Georgia Southern University Electronic Thesis and

    E-Print Network [OSTI]

    Hutcheon, James M.

    Georgia Southern University Electronic Thesis and Dissertation (ETD) Student Guide to Preparation and dissertations should adhere to include the following. · The thesis or dissertation must be the original work of the student. · Students must conform to the most recent Thesis and Dissertation Guidelines published

  14. GEORGIA INSTITUTE OF TECHNOLOGY BIOSAFETY MANUAL

    E-Print Network [OSTI]

    Sherrill, David

    in the research facilities, and classrooms located at Georgia Institute of Technology and areas located off safety inspections of laboratories and support areas, provides fire safety services, processes and manages hazardous materials for proper disposal, provides emergency response for hazardous materials

  15. Georgia Water Resources Institute Annual Technical Report

    E-Print Network [OSTI]

    to address the need for interdisciplinary research, education, technology transfer, and information the Georgia Environmental Protection Division, water and power utilities, environmental organizations, lake Corps of Engineers, U.S. Geological Survey, U.S. Environmental Protection Agency, and U.S. Fish

  16. The University of Georgia Salary Administration & Guidelines

    E-Print Network [OSTI]

    Arnold, Jonathan

    The University of Georgia Salary Administration & Guidelines July 8, 2012 TABLE OF CONTENTS I, or to the salary ranges contained herein, must be submitted in writing to the Office of Human Resources and salary studies to insure that the University's pay structure is competitive and uniform. III. USE

  17. Georgia Tech Department of Housing Bicycle Policies

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech Department of Housing Bicycle Policies Bicycle Storage There are several options for storage of bicycles in and around Housing buildings: Bicycle storage lockers are available, in limited. Some residence halls have bicycle storage rooms within the building. Ask your staff member if your

  18. Rachel Andrews Georgia Institute of Technology

    E-Print Network [OSTI]

    Rachel Andrews Georgia Institute of Technology Oscar Franzese Energy & Transportation Science) are roller dynamometers currently used to measure CMV brake efficiency. During a PBBT test, the CMV driver. Acknowledgements: Gary Capps, Mary Beth Lascurain Energy & Transportation Science Division Zane Pannell Pellissippi

  19. International Conference on Experiments/Process/System Modeling/Simulation/Optimization Athens, 6-9 July, 2011

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -EpsMs0 Athens, 6-9 July, 2011 © IC-EpsMsO NUMERICAL SIMULATION IN VERTICAL WIND AXIS TURBINE WITH PITCH turbine (HAWTs) and vertical-axis wind turbine (VAWTs)The present study concerns a small VAWT technology.simonet@ensam.eu Keywords: numerical simulation, performance coefficient, unsteady simulation, VAWT, vertical axis, wind

  20. Woodstock, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard Power Pty LtdWoodlawnWoodshedConnecticut:

  1. EA-1963: Elba Liquefaction Project, Savannah, Georgia

    Broader source: Energy.gov [DOE]

    The Federal Energy Regulatory Commission (FERC) is preparing, with DOE as a cooperating agency, an EA to analyze the potential environmental impacts of a proposal to add natural gas liquefaction and export capabilities at the existing Elba Liquefied Natural Gas Terminal near Savannah, Georgia. Additional information is available at FERC’s eLibrary website, elibrary.ferc.gov/idmws/docket_search.asp; search for docket number PF13-3.

  2. Hapeville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynnMassachusetts: Energy ResourcesMaine:Park,HansonHapeville, Georgia:

  3. Doraville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsArea (DOEDixmont, Maine:Doraville, Georgia: Energy Resources

  4. Energy Incentive Programs, Georgia | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: AlternativeCommunication3-EDepartment ofArizona Energy Incentive Programs,Georgia Energy Incentive

  5. Sec. Moniz to Georgia, Energy Department Scheduled to Close on...

    Office of Environmental Management (EM)

    Energy Department Scheduled to Close on Loan Guarantees to Construct New Nuclear Power Plant Reactors Sec. Moniz to Georgia, Energy Department Scheduled to Close on Loan...

  6. InfiniBand-Connected LNET Routers Wheaton College Georgia Institute...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Scalability of InfiniBand-Connected LNET Routers Wheaton College Georgia Institute of Technology New Mexico Institute of Mining and Technology Susan Coulter David Bonnie...

  7. Central Georgia EMC- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Central Georgia Electric Member Corporation (CGEMC) offers rebates for residential customers to increase the energy efficiency of existing homes or to build new energy efficient homes.  This year,...

  8. ,"Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Vehicle Fuel Price (Dollars per Thousand Cubic Feet)",1,"Annual",2012 ,"Release...

  9. ,"Georgia Natural Gas Imports Price All Countries (Dollars per...

    U.S. Energy Information Administration (EIA) Indexed Site

    Of Series","Frequency","Latest Data for" ,"Data 1","Georgia Natural Gas Imports Price All Countries (Dollars per Thousand Cubic Feet)",1,"Annual",2014...

  10. Georgia Tech New Student Orientation Overview of Student Financial Aid

    E-Print Network [OSTI]

    Li, Mo

    Georgia Tech New Student Orientation Overview of Student Financial Aid and Paying Your GT Invoice to successfully navigating the financial aid process at Georgia Tech # 1 ­ Application process annual # 2 ­ Read (behind Tech Tower, beside Stadium) Office Hours: 8:30 am to 4:00 pm Monday-Friday Email: bursar

  11. Page 1 of 3 Georgia Drivers License and

    E-Print Network [OSTI]

    Hutcheon, James M.

    Page 1 of 3 Georgia Drivers License and U.S. Social Security Card Information for International Students Do I need a Georgia driver's license or Social Security card? What are the benefits? Generally speaking, a U.S. driver's license is the most common form of day-to-day identification in the U.S. because

  12. Georgia State University J. Mack Robinson College of Business

    E-Print Network [OSTI]

    Frantz, Kyle J.

    in premier journals, three research centers, as well as model business outreach programs. AdditionalGeorgia State University J. Mack Robinson College of Business Department of Marketing BCOM INSTRUCTOR The Marketing Department in the Robinson College of Business of Georgia State University invites

  13. Dalton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc JumpIowa: Energy Resources Jump to: navigation,Georgia:

  14. Pineview, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | OpenBethlehem Biomass Facility JumpPineview, Georgia: Energy

  15. BRMF Georgia Mountain Biofuels | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece: EnergyMontana)District Office JumpBRMF Georgia

  16. Rome, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EA EIS Report UrlNM-bRenewable Energy|Gas andRofin SinarGeorgia: Energy

  17. Adel, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAand DaltonSolar Energy LLC JumpInformationAddingFrance)AddressGeorgia:

  18. Gordon, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource History View New Pages RecentPlantMagma EnergyGoogle lends support to theGeorgia:

  19. Marietta, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsource HistoryScenarios TowardsInformationMarietta, Georgia: Energy Resources Jump

  20. Acworth, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)dataSuccessful SmartAcomita Lake,Acton,Georgia: Energy

  1. Adairsville, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan)dataSuccessfulAdairsville, Georgia: Energy Resources Jump

  2. Camilla, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla, Georgia: Energy Resources Jump to: navigation, search

  3. Clayton, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,GeorgiaValley Geothermal Project Jump

  4. Norcross, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| Open Energy Information Lawyers' GuideGeorgia:

  5. In Savannah, Georgia, Even the Data is Green | Department of...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    in Savannah, GA. | Courtesy of the City of Savannah, GA. The new energy efficient IT Data Center in Savannah, GA. | Courtesy of the City of Savannah, GA. John Johansen...

  6. Panos Antsaklis and Kevin Passino, "Introduction to Intelligent Control Systems with High Degrees of Autonomy," in Greek, T echnical R e v i ew M onthly , Athens, Greece, pp 24-35, No 26, March 1994.

    E-Print Network [OSTI]

    Antsaklis, Panos

    of Autonomy," in Greek, T echnical R e v i ew M onthly , Athens, Greece, pp 24-35, No 26, March 1994. #12 of Autonomy," in Greek, T echnical R e v i ew M onthly , Athens, Greece, pp 24-35, No 26, March 1994. #12 of Autonomy," in Greek, T echnical R e v i ew M onthly , Athens, Greece, pp 24-35, No 26, March 1994. #12

  7. Scientific Basis for Bacterial TMDLs in Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    , GA. Todd Rasmussen Professor, D.B. Warnell School of Forestry and Natural Resources University Water Planning process. www.gadnr.org/gswp/Documents/info_req.html David Radcliffe Professor, Crop

  8. 868 New Phytologist (2009) 183: 868879 The Authors (2009) 868www.newphytologist.org Journal compilation New Phytologist (2009)

    E-Print Network [OSTI]

    Rieseberg, Loren

    2009-01-01

    Research 868 New Phytologist (2009) 183: 868­879 © The Authors (2009) 868www of Plant Biology, University of Georgia, Athens GA 30606, USA; 2Department of Botany, University of British to carbon gain and resource use have long been observed and are often interpreted as potentially adaptive

  9. Adding Semantics to Web Services Standards Kaarthik Sivashanmugam, Kunal Verma, Amit Sheth, John Miller

    E-Print Network [OSTI]

    Miller, John A.

    Adding Semantics to Web Services Standards Kaarthik Sivashanmugam, Kunal Verma, Amit Sheth, John of Georgia Athens, GA 30602 Abstract With the increasing growth in popularity of Web services, discovery of relevant Web services becomes a significant challenge. One approach is to develop semantic Web services

  10. MicroRNAs of Gallid and Meleagrid herpesviruses show generally conserved genomic locations and are virus-specific

    E-Print Network [OSTI]

    Green, Pamela

    and are virus-specific Lisa A. Waidner a , Robin W. Morgan a , Amy S. Anderson a , Erin L. Bernberg a , Sachin 19711, USA c Department of Computer and Information Sciences, Delaware Biotechnology Institute Medicine, University of Georgia, Athens, GA 30602, USA e Department of Computer Engineering & Computer

  11. Variation of surficial soil hydraulic properties across land uses in the southern Blue Ridge Mountains, North Carolina, USA

    E-Print Network [OSTI]

    Teskey, Robert O.

    distribution, in situ saturated hydraulic conductivity (measured using an Amoozemeter com- pact constant headVariation of surficial soil hydraulic properties across land uses in the southern Blue Ridge of Geography, 204 GG Building, The University of Georgia, Athens, GA 30602-2502, United States b Ecosystems

  12. GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION BASIC RESEARCH MASTER AGREEMENT Effective Date: ________________ Basic Research Master Agreement Number: ______________ THIS BASIC RESEARCH MASTER AGREEMENT is made that authorizes performance of specific research under this Master Agreement. Task Orders shall use the sample

  13. GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT

    E-Print Network [OSTI]

    Li, Mo

    1 GEORGIA TECH RESEARCH CORPORATION APPLIED RESEARCH MASTER AGREEMENT Effective Date: ________________ Applied Research Master Agreement Number: ______________ THIS APPLIED RESEARCH MASTER AGREEMENT this Master Agreement. Task Order shall use the sample format provided in Attachment A and will include

  14. Media Contacts: Molecular Biology Initiative, Georgia Southern University

    E-Print Network [OSTI]

    Hutcheon, James M.

    (biotechnology, chemistry, physics, biology, forensics), including applicable technology and math skills. "This-ready workforce needed to fill these jobs and we applaud them for standing out as leaders in Georgia's educational

  15. EECBG Success Story: Georgia County Turning Industrial and Farm...

    Broader source: Energy.gov (indexed) [DOE]

    Georgia, a town that's poised to see big savings thanks to their investment in biodiesel. | Photo by Ken Cook EECBG Success Story: Atlanta Suburb Greases the Path to Savings...

  16. Georgia: Data Center and Historic Municipal Building Go Green...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Municipal Building Go Green Georgia: Data Center and Historic Municipal Building Go Green August 21, 2013 - 9:45am Addthis Data centers can consume 100 to 200 times more...

  17. Energy Savings Performance Contract- Robins Air Force Base, Georgia 

    E-Print Network [OSTI]

    Edge, J. S.

    1998-01-01

    saving projects is through private sector financing, also known as Energy Savings Performance Contracting (ESPC). Robins Air Force Base, located in middle Georgia, has recently implemented such a contract. Using an Army Corps of Engineers area...

  18. GeorgiaSouthern.edu/factbook On the Cover

    E-Print Network [OSTI]

    Hutcheon, James M.

    and made-to-order pasta, Mongolian grill selections, a full bakery, an espresso/smoothie bar, and separate sustainability at the forefront of Georgia Southern's mission, Dining Commons was built as a Leadership in Energy

  19. Gordon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: Energy ResourcesIllinois:GoodCounty, Georgia:

  20. Population structure of Cylindrocladium parasiticum infecting peanuts (Arachis hypogaea) in Georgia, USA

    E-Print Network [OSTI]

    Population structure of Cylindrocladium parasiticum infecting peanuts (Arachis hypogaea) in Georgia Cylindrocladium parasiticum is an impor- tant pathogen of peanut (Arachis hypogaea) causing the disease associated with peanut in Georgia, USA. Ten polymorphic microsatellite markers were used to determine genetic

  1. Connect, Collaborate, Commercialize There are many different opportunities for engagement and technology transfer at Georgia

    E-Print Network [OSTI]

    Garmestani, Hamid

    and technology transfer at Georgia Tech. Working together we can tailor a relationship unique to your company

  2. 2015 Georgia Institute of Technology NIST Transactive Energy Challenge Preparatory Workshop

    E-Print Network [OSTI]

    control ­ Black Start ­ Etc. 7 #12;© 2015 Georgia Institute of Technology Architecture Summary The grid© 2015 Georgia Institute of Technology NIST Transactive Energy Challenge Preparatory Workshop March, 2015 Santiago Grijalva Georgia Institute of Technology Co-Simulation of Decentralized Grid Control

  3. 9/21/2004 University of Georgia Strategic Plan Update 2003

    E-Print Network [OSTI]

    Arnold, Jonathan

    9/21/2004 University of Georgia Strategic Plan Update 2003 1 "Building Georgia's World University the Vision to Reality Presented by: Office of the Associate Provost for Institutional Effectiveness #12;9/21/2004 as the guidepost #12;9/21/2004 University of Georgia Strategic Plan Update 2003 3 Three Strategic Directions

  4. your careerGeorgia Tech Evening MBA scheller.gatech.edu/mba

    E-Print Network [OSTI]

    Li, Mo

    . Take your career to new heights. "I chose Georgia Tech because of four key advantages: 1) a flexibletransform your careerGeorgia Tech Evening MBA #12;Business, Meet Tech. scheller.gatech.edu/mba Contents 3 Message from the Dean 6 Georgia Tech Advantages 7 MBA Curriculum 9 Learning Beyond the Classroom

  5. State of Georgia CERTIFICATE OF EXEMPTION OF LOCAL HOTEL/MOTEL EXCISE TAX

    E-Print Network [OSTI]

    Teskey, Robert O.

    AND MOTEL OPERATORS: Effective April 2, 1987, Act Number 621 amending Official Code of Georgia Annotated for exemption of the local hotel/motel excise tax under Official Code of Georgia Annotated Chapter 48-13 (as Section 48-13-51 provides that Georgia state or local government officials or employees traveling

  6. ISET Journal of Earthquake Technology, Technical Note, Vol. 40, No.1, March 2003, pp. 77-97 ATHENS EARTHQUAKE OF 7 SEPTEMBER 1999

    E-Print Network [OSTI]

    Gupta, Vinay Kumar

    ISET Journal of Earthquake Technology, Technical Note, Vol. 40, No.1, March 2003, pp. 77-97 ATHENS EARTHQUAKE OF 7 SEPTEMBER 1999: INTENSITY MEASURES AND OBSERVED DAMAGES A. Elenas Department of Civil Engineering Institute of Structural Mechanics and Earthquake Engineering Democritus University of Thrace GR

  7. Georgia - Search - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Informationmonthly gasoline price toStocks 2009 2010 2011 2012 2013 20147"10"GeorgiaGeorgia

  8. White County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland: EnergyWexfordSouthValleyCity, Oregon:Georgia:

  9. Whitfield County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:Meadow Lake, NewWhiteside County,County, Georgia:

  10. Wilkes County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blog HomeWildlifeWilhoit,Georgia:

  11. Greene County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia:Oregon:CorpGreenburgh, New York:Georgia: Energy

  12. Grady County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: EnergyGorlitz AG JumpGeorgia: Energy Resources Jump

  13. City of Chickamauga, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley, IdahoChefornak, AlaskaChickamauga, Georgia

  14. Baldwin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia:BalchAlabama:Georgia:

  15. City of West Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,Georgia (Utility Company)West Point, Georgia

  16. A Test of a Strong Ground Motion Prediction Methodology for the 7 September 1999, Mw=6.0 Athens Earthquake

    SciTech Connect (OSTI)

    Hutchings, L; Ioannidou, E; Voulgaris, N; Kalogeras, I; Savy, J; Foxall, W; Stavrakakis, G

    2004-08-06

    We test a methodology to predict the range of ground-motion hazard for a fixed magnitude earthquake along a specific fault or within a specific source volume, and we demonstrate how to incorporate this into probabilistic seismic hazard analyses (PSHA). We modeled ground motion with empirical Green's functions. We tested our methodology with the 7 September 1999, Mw=6.0 Athens earthquake, we: (1) developed constraints on rupture parameters based on prior knowledge of earthquake rupture processes and sources in the region; (2) generated impulsive point shear source empirical Green's functions by deconvolving out the source contribution of M < 4.0 aftershocks; (3) used aftershocks that occurred throughout the area and not necessarily along the fault to be modeled; (4) ran a sufficient number of scenario earthquakes to span the full variability of ground motion possible; (5) found that our distribution of synthesized ground motions span what actually occurred and their distribution is realistically narrow; (6) determined that one of our source models generates records that match observed time histories well; (7) found that certain combinations of rupture parameters produced ''extreme'' ground motions at some stations; (8) identified that the ''best fitting'' rupture models occurred in the vicinity of 38.05{sup o} N 23.60{sup o} W with center of rupture near 12 km, and near unilateral rupture towards the areas of high damage, and this is consistent with independent investigations; and (9) synthesized strong motion records in high damage areas for which records from the earthquake were not recorded. We then developed a demonstration PSHA for a source region near Athens utilizing synthesized ground motion rather that traditional attenuation. We synthesized 500 earthquakes distributed throughout the source zone likely to have Mw=6.0 earthquakes near Athens. We assumed an average return period of 1000 years for this magnitude earthquake in the particular source zone, thereby having simulated a catalog of ground motion for a period of 500,000 years. The distribution of traditional ground motion parameters of peak acceleration or spectral ordinates then becomes the synthesized record from which we develop hazard curves in the form of the annual probability of exceedance. This approach replaces the aleatory uncertainty that current PSHA studies estimate by regression of empirical parameters from the worldwide database with epistemic uncertainty on what specific sources actually do at specific sites. This is a fundamental change for PSHA and eliminates the need to extrapolate current empirical data that was gathered over about 50 years to represent values for 10{sup -3} annual probability of exceedance or less. This difference becomes especially significant for very sensitive structures that require estimates for 10{sup -5} or less exceedance.

  17. Transits of Venus and Solar diameter measures from ground: method and results from Athens (2004) and Huairou (2012)

    E-Print Network [OSTI]

    Sigismondi, Costantino; Wang, Xiaofan; Xie, Wenbin; Carinci, Massimo; Mimmo, Alessio

    2015-01-01

    The variation of the solar diameter in time and in position angle has implications in astrophysics and in general relativity, as the long series of studies attest. The Transits of Venus in 2004 and 2012 have been carefully studied because of the rarity of the phenomenon and its historical importance due the AU measure and to the discovery of Venus atmosphere. The characterization of Venus atmosphere and the measure of the solar diameter to the milliarcsecond level of precision have been studied also from satellite images. The results of the solar diameter measurements made with the observations in Athens (2004) and at the Huairou Solar Observing Station in China (2012) are presented. The topic of the oblateness of the Sun at sunset and its intrinsic value is drafted to introduce the general public to the relativistic relevance of measuring the solar figure, in the occasion of the International Year of Light 2015.

  18. School of Earth and Atmospheric Sciences Georgia Institute of Technology

    E-Print Network [OSTI]

    Wang, Yuhang

    in atmospheric chemistry/air quality and climate and a growing reputation in oceanography, geophysicsSchool of Earth and Atmospheric Sciences Georgia Institute of Technology Strategic Plan March 1 opportunities. Vision The vision of the School of Earth and Atmospheric Sciences is: To lead in innovative

  19. Shipping and Receiving Dangerous Goods at Georgia Tech

    E-Print Network [OSTI]

    Shipping and Receiving Dangerous Goods at Georgia Tech Contacts: Biological Shipments: Shane://industry.gatech.edu/researchers/forms) GENERAL: The transportation of dangerous goods is regulated by a number of national and international of Dangerous Goods (Flash). PROCESS: 1) All shipments must have a Document Id number as well as a People

  20. LCA-based Selection for XML Document Collections Georgia Koloniari

    E-Print Network [OSTI]

    Pitoura, Evaggelia

    LCA-based Selection for XML Document Collections Georgia Koloniari Department of Computer Science in the collection to the query. We consider keyword queries and support Lowest Common Ancestor (LCA) semantics of the LCA of those nodes in the XML docu- ment that contain the query keywords. To avoid evaluating queries

  1. Georgia Institute of Technology School of Materials Science and Engineering

    E-Print Network [OSTI]

    Li, Mo

    Georgia Institute of Technology School of Materials Science and Engineering Faculty Policy and Committee Handbook #12;Introduction The purpose of this handbook is to document the MSE School's policies. The committee will function as the faculty-elected entity for down-selecting committee members (and chairs

  2. THE SCHOOL OF CHEMISTRY AND BIOCHEMISTRY GEORGIA INSTITUTE OF TECHNOLOGY

    E-Print Network [OSTI]

    Sherrill, David

    THE SCHOOL OF CHEMISTRY AND BIOCHEMISTRY GEORGIA INSTITUTE OF TECHNOLOGY GRADUATE STUDENT HANDBOOK: REQUIRED FORMS A.1. Research Advisor Selection form (Chemistry and Biochemistry) A.2 Completion of Data of the program, you will complete courses that provide a bridge between introductory (undergraduate) material

  3. Reservoirs in Georgia: Meeting Water Supply Needs While

    E-Print Network [OSTI]

    Radcliffe, David

    listed in the National Inventory of Dams 2 2. Impoundments in a portion of the Upper Oconee River watershed 2 3. Water level fluctuations before and after construction of the Allatoona Dam 5 4. The series an overview of the number of reservoirs in Georgia and their impacts. Dams and reservoirs differ marked

  4. GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT

    E-Print Network [OSTI]

    GEORGIA TECH RESEARCH CORPORATION SPECIALIZED TESTING SERVICES AGREEMENT Project No Members"). Section 2. Payment; Fixed Price Amount. 2.1 COMPANY agrees to pay GTRC $______ ("Fixed Price%) of the Fixed Price Amount to GTRC upon signing this Agreement. The advance payment will be applied against

  5. AlGaN/GaN-based power semiconductor switches

    E-Print Network [OSTI]

    Lu, Bin, Ph. D. Massachusetts Institute of Technology

    2013-01-01

    AlGaN/GaN-based high-electron-mobility transistors (HEMTs) have great potential for their use as high efficiency and high speed power semiconductor switches, thanks to their high breakdown electric field, mobility and ...

  6. Webster County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: Energy Resources Jump to: navigation, search Equivalent URI

  7. Wheeler County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland: EnergyWexfordSouth Broward BiomassAFB,

  8. Wilcox County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blog Home >Alabama:

  9. Wilkinson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia: EnergyMaryland:MeadowWikiSysop's blogWilkin

  10. Worth County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard Power PtyOhio:Doing BusinessWiseUSA |

  11. Stewart County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren) JumpandStereo Satellite ImageryWashington: EnergyGeorgia:

  12. Talbot County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing CapacityVectren)Model forTechnologies95Symerton,EEconomiesTakomaGeorgia:

  13. Floyd County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban Transport JumpFlowood, Mississippi: Energy Resources JumpGeorgia:

  14. Glynn County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County, Georgia: Energy Resources Jump to: navigation, search

  15. Douglas County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstrumentsArea (DOEDixmont, Maine:Doraville,Alabama:Georgia: Energy

  16. Schley County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/ColoradoRemsenburg-Speonk,SageScheuco International Jump to:Schley County, Georgia: Energy

  17. Mountain Park, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: EnergyInformationOliver, Pennsylvania: EnergyPark, Georgia: Energy

  18. Lowndes County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona:Oregon:Lowell Point, Alaska: Energy ResourcesAuthorityGeorgia:

  19. Lanier County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: Energy Resources JumpColorado:NewLanier County, Georgia: Energy

  20. Lee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: EnergyLebanon County, Pennsylvania:Georgia: Energy Resources Jump

  1. Randolph County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onRAPID/Geothermal/Exploration/Colorado <RAPID/Geothermal/WaterEnergy Marketing Corp JumpRamRandolph County,Georgia:

  2. City of East Point, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,

  3. Crawford County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)|Alabama: Energy ResourcesVirginia:Georgia: Energy Resources

  4. Crisp County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)|Alabama: EnergyPennsylvania:CrestwoodCounty, Georgia: Energy

  5. City of Quitman, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurchFontanelle,InformationQuitman, Georgia (Utility

  6. Lighting Up Georgia Convenience Stores | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURING OFFICE INDUSTRIALU.S.Leadership on CleanUp Georgia Convenience Stores Lighting Up

  7. Best Practices for Rural Traffic Safety Georgia's Experience in Increasing Rural Safety Belt Use Rates

    E-Print Network [OSTI]

    Minnesota, University of

    Best Practices for Rural Traffic Safety Georgia's Experience in Increasing Rural Safety Belt Use Enforcement Efforts ­ Checkpoints ­ Messages regarding Seat Belts ­ Messages regarding Rural SB Use

  8. A DISPLAY CONCEPT FOR STAYING AHEAD OF THE AIRPLANE Eric N. Johnson, Lockheed Martin Aeronautical Systems, Marietta, Georgia

    E-Print Network [OSTI]

    Johnson, Eric N.

    A DISPLAY CONCEPT FOR STAYING AHEAD OF THE AIRPLANE Eric N. Johnson, Lockheed Martin Aeronautical Systems, Marietta, Georgia David C. Hansen, Lockheed Martin Aeronautical Systems, Marietta, Georgia manner required for many aerospace applications. Considerably more data fusion, data prediction, alerting

  9. Subscriber access provided by Georgia Tech Library The Journal of Physical Chemistry C is published by the American Chemical

    E-Print Network [OSTI]

    Wang, Zhong L.

    and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, and Department of AdVanced Material, then put into a polypropylene centrifuge tube, which was filled with 5 mL sterile phosphate buffer solution

  10. Case Study: Georgia-Pacific Reduces Outside Fuel Costs and Increases Process Efficiency with Insulation Upgrade Program 

    E-Print Network [OSTI]

    Jackson, D.

    1997-01-01

    A Georgia-Pacific plywood plant located in Madison, Georgia recently decided to insulate their steam lines for energy conservation, improved process efficiency and personnel protection. The goal of the project was to eliminate dependency...

  11. Simulation and management implications of feral horse grazing on Cumberland Island, Georgia

    E-Print Network [OSTI]

    Turner, Monica G.

    Simulation and management implications of feral horse grazing on Cumberland Island, Georgia MONICA GOIGEL TURNER Cumberiand Island National !&shore, Georgia,is inhabited by a population of feral horsea an acceptable population size of feral horses. Five-year shnulations indicated a threshold of 2,700 kg

  12. GEORGIA STATE UNIVERSITY: Robinson College of Business, Department of Risk Management & Insurance

    E-Print Network [OSTI]

    Frantz, Kyle J.

    GEORGIA STATE UNIVERSITY: Robinson College of Business, Department of Risk Management & Insurance effective fall 2015 in the Department of Risk Management and Insurance at the Robinson College of Business The mission of the Department of Risk Management and Insurance at Georgia State University is to better

  13. This article was downloaded by:[Georgia Technology Library] On: 27 July 2007

    E-Print Network [OSTI]

    Wang, Zhong L.

    This article was downloaded by:[Georgia Technology Library] On: 27 July 2007 Access Details 2007 #12;DownloadedBy:[GeorgiaTechnologyLibrary]At:17:0827July2007 Philosophical Magazine, Vol. 87, Nos cross-section and well-defined growth directions, with widths ranging from 30 nm to 2 mm, width

  14. BACTERIA TMDL IMPLEMENTATION CONTROL STRATEGIES OF THE SOUTHEAST: RECOMMENDATIONS FOR GEORGIA

    E-Print Network [OSTI]

    Radcliffe, David

    BACTERIA TMDL IMPLEMENTATION CONTROL STRATEGIES OF THE SOUTHEAST: RECOMMENDATIONS FOR GEORGIA implementation plans for bacteria in the state of Georgia. Methods include reviewing relevant literature, policy bacteria TMDL implementation plans; 2) showing control strategies in other states that could be implemented

  15. Tilefish off South Carolina and Georgia R. A. LOW, Jr., G. F. ULRICH, and F. BLUM

    E-Print Network [OSTI]

    Tilefish off South Carolina and Georgia R. A. LOW, Jr., G. F. ULRICH, and F. BLUM Introduction. Preliminary indications are that the 1981 commercial catch off South Carolina and Georgia was comparable and were primarily caught in a small area off southeastern Florida. In 1980, the South Carolina Wildlife

  16. Momentum flux estimates for South Georgia Island mountain waves in the stratosphere observed via satellite

    E-Print Network [OSTI]

    Alexander, M. Joan

    Momentum flux estimates for South Georgia Island mountain waves in the stratosphere observed via observations of mountain wave events in the stratosphere above South Georgia Island in the remote southern important drag forces on the circulation. Small island orography is generally neglected in mountain wave

  17. Ph.D in Economics at the Andrew Young School, Georgia State University

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Ph.D in Economics at the Andrew Young School, Georgia State University WHY Georgia State University's Department of Economics? We are part of one of America's best public affairs graduate schools: the Andrew in scholarly journals including Econometrica, American Economic Review, Journal of Political Economy, Quarterly

  18. Advertisement for Clinical Positions GEORGIA STATE UNIVERSITY invites applications for multiple non-tenure-track clinical

    E-Print Network [OSTI]

    Frantz, Kyle J.

    , demonstrated capability for and commitment to publishing research in refereed journals, and an earned Ph on University budget approval. Review of applications will begin immediately and will continue until positions-413-7378 Georgia State University a unit of the University System of Georgia, is an equal opportunity educational

  19. POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition in Licensing

    E-Print Network [OSTI]

    Arnold, Jonathan

    POLICY STATEMENT University of Georgia Research Foundation, Inc. Policy on Equity Acquisition the interests of the company over their responsibilities to UGARF and the University of Georgia. This Policy with this Policy. II. Policy In the course of intellectual property licensing, UGARF, through the work of TCO, may

  20. Mechanism for Job Creation in Georgia: Enterprise Innovation Institute (EI2

    E-Print Network [OSTI]

    , including such leaders as Suniva, which produces solar panels; CardioMEMS, a developer of implantableMechanism for Job Creation in Georgia: Enterprise Innovation Institute (EI2 ) Government's Enterprise Innovation Institute (EI2 ) plays a critical role in the growth of Georgia's econo- my. Through

  1. Eligibility for GT Housing All applicants must have been accepted to Georgia Tech and accepted their offer of admission

    E-Print Network [OSTI]

    Li, Mo

    Eligibility for GT Housing All applicants must have been accepted to Georgia Tech and accepted their offer of admission before they can apply for Georgia Tech Housing. Applicants must be at least 16 years of age on the date of application for Georgia Tech Housing. Applicants over 29 years of age must work

  2. Georgia - Rankings - U.S. Energy Information Administration (EIA)

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Informationmonthly gasoline price toStocks 2009 2010 2011 2012 2013 20147"10"Georgia

  3. Warren County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,Village ofWaialua,Wallington,Solar CoFacility |FacilityGeorgia:

  4. Washington County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin,VillageWarren Park, Indiana:Open EnergyAlabama:Georgia: Energy

  5. Turner County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEt Al.,Turin, New York: Energy Resources Jump to:Georgia: Energy Resources

  6. Hall County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainableGlynn County,SolarFERCInformationVirginia: EnergyHall County, Georgia:

  7. Franklin County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable Urban TransportFortistar LLC Jumpwells, RaftArkansas: EnergyGeorgia:

  8. Echols County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence, RhodeEchols County, Georgia: Energy Resources Jump

  9. Effingham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence,New Mexico: EnergyEnergyCreek GeothermalNewGeorgia:

  10. Elbert County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbH Jump to:Providence,New Mexico:Cerrito,Paso,Elaine, Arkansas:Georgia:

  11. Fayette County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, AlabamaETEC GmbHFarinello Geothermal Power Station JumpFaroeFaulkFauquierGeorgia:

  12. Georgia Regions | U.S. DOE Office of Science (SC)

    Office of Science (SC) Website

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorkingLosThe 26thIWalterOptimizing(SC)FermiFundingGenome To LifeGeorgia

  13. Mitchell County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland: Energy ResourcesDec 2005MinnehahaElectric Coop, Inc JumpInformationGeorgia:

  14. Macon County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma,Information MHKMHK5 < MHKKemblaSolar JumpMackGeorgia: Energy

  15. Lincoln County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: EnergyLebanonTexas:Hill,Photovoltaic JumpLimestone,PowerGeorgia:

  16. Jefferson County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas: Energy ResourcesOrder at 8,OpenKentucky:Jeanerette BiomassJefferson County, Georgia:

  17. Pickens County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | Open EnergyPhoenicia, New York:PianaccePiattGeorgia: Energy

  18. Pike County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPIProtectio1975) | Open EnergyPhoenicia,Creek, Ohio: EnergyGeorgia: Energy

  19. Quitman County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource HistoryPotentialRuralUtilityScalePVGeneration JumpPublic UtilityQuintas Energy Jump to: navigation,Georgia:

  20. Newton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History ViewMayo, Maryland:NPI Ventures LtdNeville,InformationNewcastle,NewNewstead, NewGeorgia: Energy

  1. City of Acworth, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd Jump to:ChangingCNEInformationInformationGeorgia

  2. City of Adel, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company) Jump to: navigation, search Name:

  3. City of Barnesville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (Utility Company)Arlington,City ofBardstown,City

  4. City of Blakely, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham, KentuckyBigelow Place: IowaJump to:

  5. City of Buford, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgia (UtilityBenham,Bowie,TennesseeMinnesota

  6. City of Cairo, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley, Idaho (Utility Company) Jump

  7. City of Doerun, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,Columbus Place:Cuero,Dike, Iowa

  8. City of Elberton, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,Rapids,Elba, Alabama

  9. City of Ellaville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtd JumpGeorgiaBurley,ColumbusDurant,Rapids,Elba,Point,Ellaville,

  10. City of Grantville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLCLtdEllsworth, IowaGraettinger, Iowa (UtilityGrantville, Georgia

  11. City of Moultrie, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, Iowa (Utility Company)Menasha,MonroeMoultrie, Georgia (Utility

  12. City of Thomasville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar EnergyLawler, IowaScottsboro,Kansas (UtilityCity of Thomasville, Georgia

  13. Appling County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A S Jump to:AngolaEnergy ManagementGeorgia: Energy Resources

  14. Baker County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia: Energy Resources Jump to:

  15. Banks County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuelsOpen EnergyBanks County, Georgia: Energy

  16. Calhoun County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine:Kansas: EnergyCalendarCalhoun County, Alabama: EnergyGeorgia: Energy

  17. Bibb County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental JumpInformation BeaufortBentMichigan:Greece) JumpGeorgia: Energy Resources Jump

  18. Burke County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine: EnergyEnergyOhio: EnergyNorthInformationBurke County, Georgia:

  19. Coffee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) JumpIowa: EnergyEnergy InformationGeorgia: Energy

  20. Cook County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company)| Open(Evans, EtInformation ControlGeorgia: Energy

  1. Dade County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (UtilityInstruments Inc Jump to:67-2006-12Dabbrook Services Jump to:|Georgia:

  2. Chatham County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: Energy Resources JumpNebraska: EnergyGeorgia: Energy

  3. Cherokee County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIR JumpMaine: EnergyEnergyEnergyChengdu ChinaGeorgia: Energy

  4. City of Cartersville, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill, NebraskaIllinoisCartersville, Georgia

  5. City of Covington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurch Point,Blue Hill,MissouriClewiston,CityCity ofGeorgia

  6. City of Mansfield, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank,CammackFLIRChurchFontanelle, IowaIowaCity ofGeorgia (Utility Company) Jump

  7. Clayton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTIONRobertsdale, Alabama (Utility Company) Jump to:New York:Clay County,NorthGeorgia: Energy Resources

  8. Fulton County, Georgia: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePowerEdistoWhiskeyFootprint VenturesColorado:Georgia: Energy Resources Jump

  9. City of Washington, Georgia (Utility Company) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButte County,Camilla,ThermalCubaParker,Georgia (Utility Company) Jump to:

  10. Influenza A virus evolution and spatio-temporal dynamics in Eurasian Wild Birds: A phylogenetic and phylogeographic study of whole-genome sequence data

    E-Print Network [OSTI]

    Lewis, Nicola S.; Verhagen, Josanne H.; Javakhishvili, Zurab; Russell, Colin A.; Lexmond, Pascal; Westgeest, Kim B.; Bestebroer, Theo M.; Halpin, Rebecca A.; Lin, Xudong; Ransier, Amy; Fedorova, Nadia B.; Stockwell, Timothy B.; Latorre-Margalef, Neus; Olsen, Björn; Smith, Gavin; Bahl, Justin; Wentworth, David E.; Waldenström, Jonas; Fouchier, Ron A. M.; de Graaf, Miranda

    2015-04-22

    Cooperative 19 Wildlife Disease Study, University of Georgia, Athens, GA 30602, USA. 20 8Department of Medical Sciences, Zoonosis Science Center, Uppsala University, Uppsala Sweden. 21 9Laboratory of Virus Evolution, Program in Emerging Infectious Diseases... that human 67 population size, duck density, rice cropping intensity, wild bird migration, and poultry trade all 68 contribute to virus prevalence and potential for detection (Takekawa et al., 2010; Takekawa et al., 69 2013). Ideally we would also want...

  11. Air Quality and Road Emission Results for Fort Stewart, Georgia

    SciTech Connect (OSTI)

    Kirkham, Randy R.; Driver, Crystal J.; Chamness, Mickie A.; Barfuss, Brad C.

    2004-02-02

    The Directorate of Public Works Environmental & Natural Resources Division (Fort Stewart /Hunter Army Airfield) contracted with the Pacific Northwest National Laboratory (PNNL) to monitor particulate matter (PM) concentrations on Fort Stewart, Georgia. The purpose of this investigation was to establish a PM sampling network using monitoring equipment typically used in U.S. Environmental Protection Agency (EPA) ''saturation sampling'', to determine air quality on the installation. In this initial study, the emphasis was on training-generated PM, not receptor PM loading. The majority of PM samples were 24-hr filter-based samples with sampling frequency ranging from every other day, to once every six days synchronized with the EPA 6th day national sampling schedule. Eight measurement sites were established and used to determine spatial variability in PM concentrations and evaluate whether fluctuations in PM appear to result from training activities and forest management practices on the installation. Data collected to date indicate the average installation PM2.5 concentration is lower than that of nearby urban Savannah, Georgia. At three sites near the installation perimeter, analyses to segregate PM concentrations by direction of air flow across the installation boundary indicate that air (below 80 ft) leaving the installation contains less PM2.5 than that entering the installation. This is reinforced by the observation that air near the ground is cleaner on average than the air at the top of the canopy.

  12. NELIOTA: ESA's new NEO lunar impact monitoring project with the 1.2m telescope at the National Observatory of Athens

    E-Print Network [OSTI]

    Bonanos, A Z; Boumis, P; Bellas-Velidis, I; Maroussis, A; Dapergolas, A; Fytsilis, A; Charmandaris, V; Tsiganis, K; Tsinganos, K

    2015-01-01

    NELIOTA is a new ESA activity launched at the National Observatory of Athens in February 2015 aiming to determine the distribution and frequency of small near-earth objects (NEOs) via lunar monitoring. The project involves upgrading the 1.2m Kryoneri telescope at the National Observatory of Athens, procuring two fast-frame cameras, and developing a software system, which will control the telescope and the cameras, process the images and automatically detect NEO impacts. NELIOTA will provide a web-based user interface, where the impact events will be reported and made available to the scientific community and the general public. The objective of this 3.5 year activity is to design, develop and implement a highly automated lunar monitoring system, which will conduct an observing campaign for 2 years in search of NEO impact flashes on the Moon. The impact events will be verified, characterised and reported. The 1.2m telescope will be capable of detecting flashes much fainter than current, small-aperture, lunar m...

  13. sRecovery Act: Geologic Characterization of the South Georgia Rift Basin for Source Proximal CO2 Storage

    SciTech Connect (OSTI)

    Waddell, Michael

    2014-09-30

    This study focuses on evaluating the feasibility and suitability of using the Jurassic/Triassic (J/TR) sediments of the South Georgia Rift basin (SGR) for CO2 storage in southern South Carolina and southern Georgia The SGR basin in South Carolina (SC), prior to this project, was one of the least understood rift basin along the east coast of the U.S. In the SC part of the basin there was only one well (Norris Lightsey #1) the penetrated into J/TR. Because of the scarcity of data, a scaled approach used to evaluate the feasibility of storing CO2 in the SGR basin. In the SGR basin, 240 km (~149 mi) of 2-D seismic and 2.6 km2 3-D (1 mi2) seismic data was collected, process, and interpreted in SC. In southern Georgia 81.3 km (~50.5 mi) consisting of two 2-D seismic lines were acquired, process, and interpreted. Seismic analysis revealed that the SGR basin in SC has had a very complex structural history resulting the J/TR section being highly faulted. The seismic data is southern Georgia suggest SGR basin has not gone through a complex structural history as the study area in SC. The project drilled one characterization borehole (Rizer # 1) in SC. The Rizer #1 was drilled but due to geologic problems, the project team was only able to drill to 1890 meters (6200 feet) instead of the proposed final depth 2744 meters (9002 feet). The drilling goals outlined in the original scope of work were not met. The project was only able to obtain 18 meters (59 feet) of conventional core and 106 rotary sidewall cores. All the conventional core and sidewall cores were in sandstone. We were unable to core any potential igneous caprock. Petrographic analysis of the conventional core and sidewall cores determined that the average porosity of the sedimentary material was 3.4% and the average permeability was 0.065 millidarcy. Compaction and diagenetic studies of the samples determined there would not be any porosity or permeability at depth in SC. In Georgia there appears to be porosity in the J/TR section based on neutron log porosity values. The only zones in Rizer #1 that appear to be porous were fractured diabase units where saline formation water was flowing into the borehole. Two geocellular models were created for the SC and GA study area. Flow simulation modeling was performed on the SC data set. The injection simulation used the newly acquired basin data as well as the Petrel 3-D geologic model that included geologic structure. Due to the new basin findings as a result of the newly acquired data, during phase two of the modeling the diabase unit was used as reservoir and the sandstone units were used as caprock. Conclusion are: 1) the SGR basin is composed of numerous sub-basins, 2) this study only looked at portions of two sub-basins, 3) in SC, 30 million tonnes of CO2 can be injected into the diabase units if the fracture network is continuous through the units, 4) due to the severity of the faulting there is no way of assuring the injected CO2 will not migrate upward into the overlying Coastal Plain aquifers, 5) in Georgia there appears to porous zones in the J/TR sandstones, 6) as in SC there is faulting in the sub-basin and the seismic suggest the faulting extends upward into the Coastal Plain making that area not suitable for CO2 sequestration, 7) the complex faulting observed at both study areas appear to be associated with transfer fault zones (Heffner 2013), if sub-basins in the Georgia portion of the SGR basin can be located that are far away from the transfer fault zones there is a strong possibility of sequestering CO2 in these areas, and 9) the SGR basin covers area in three states and this project only studied two small areas so there is enormous potential for CO2 sequestration in other portions the basin and further research needs to be done to find these areas.

  14. Wind Powering America: A New Wind Economy for South Carolina and Georgia Final Report

    SciTech Connect (OSTI)

    SC Energy Office: Southern Alliance for Clean Energy

    2013-02-12

    This report describes all activities undertaken by the Southern Alliance for Clean Energy (SACE) in cooperation with the states of Georgia and South Carolina to develop a public outreach program, including shared analytical and reference tools and other technical assistance.

  15. This article was downloaded by: [Georgia Tech Library] On: 10 April 2013, At: 14:09

    E-Print Network [OSTI]

    Wu, Jeff

    be independently verified with primary sources. The publisher shall not be liable for any loss, actions, claimsThis article was downloaded by: [Georgia Tech Library] On: 10 April 2013, At: 14:09 Publisher

  16. PLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [Georgia Technology Library

    E-Print Network [OSTI]

    Lieuwen, Timothy C.

    doses should be independently verified with primary sources. The publisher shall not be liable for anyPLEASE SCROLL DOWN FOR ARTICLE This article was downloaded by: [Georgia Technology Library] On: 20

  17. GEORGIA INSTITUTE OF TECHNOLOGY COLLEGE OF ENGINEERING 1 College of Engineering

    E-Print Network [OSTI]

    Li, Mo

    Electrical and Computer Engineering Industrial and Systems Engineering Materials Science and Engineering and Biomolecular Engineering Civil and Environmental Engineering Electrical and Computer Engineering IndustrialGEORGIA INSTITUTE OF TECHNOLOGY · COLLEGE OF ENGINEERING 1 College of Engineering Aerospace

  18. University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program

    E-Print Network [OSTI]

    Arnold, Jonathan

    University of Georgia / University of Liverpool Seed Grant / Pump-Priming Grant Program Program and scholarship between the two institutions. The two institutions are offering seed grants / pump-priming grants

  19. UMass INFORMSProfessor Anna Nagurney Dr. Garrow is an Associate Professor at the Georgia Institute of

    E-Print Network [OSTI]

    Nagurney, Anna

    at the Georgia Institute of Technology. She earned her Ph.D. at Northwestern University, with an emphasis and Logistics Society of INFORMS and Vice President of AGIFORS. Abstract: A new parameter estimation routine Management Models with Censored Data" " #12;

  20. Synthesis of galactosaminyl DD-chiro-inositols Georgia Marnera and Marc d'Alarcao*

    E-Print Network [OSTI]

    d'Alarcao, Marc

    Synthesis of galactosaminyl DD-chiro-inositols Georgia Marnera and Marc d'Alarcao* Michael Research.carres.2006.03.031 * Corresponding author. Tel.: +1 617 627 3686; fax: +1 617 627 3443; e-mail: marc

  1. Cost-Effectiveness of ASHRAE Standard 90.1-2010 for the State of Georgia

    SciTech Connect (OSTI)

    Hart, Philip R.; Rosenberg, Michael I.; Xie, YuLong; Zhang, Jian; Richman, Eric E.; Elliott, Douglas B.; Loper, Susan A.; Myer, Michael

    2013-11-01

    Moving to the ANSI/ASHRAE/IES Standard 90.1-2010 version from the Base Code (90.1-2007) is cost-effective for all building types and climate zones in the State of Georgia.

  2. An Evaluation of Georgia's Institutional Conservation Program Preliminary Report - June 1989 

    E-Print Network [OSTI]

    Brown, M. L.; Downing, C.

    1989-01-01

    The Institutional Conservation Program (ICP) has been active in Georgia since 1980 and has distributed over $20 million in matching funds for conservation measures and energy studies. The purpose of the ICP is to reduce energy consumption in schools...

  3. EA-1255: Project Partnership Transportation of Foreign-Owned Enriched Uranium from the Republic of Georgia

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts for the proposal to transport 5.26 kilograms of enriched uranium-23 5 in the form of nuclear fuel, from the Republic of Georgia to the United Kingdom.

  4. Energy Conservation Recommendations, Implementation Costs, and Projected Paybacks for Georgia's Targeted Schools and Hospitals Conservation Program 

    E-Print Network [OSTI]

    Brown, M. L.; Moore, D. M.

    1988-01-01

    During the past year the Georgia Tech Research Institute performed technical assistance studies on over 100 school and hospital buildings under a program funded by the Governor's Office of Energy Resources. This program is known as the Targeted...

  5. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, GSF award___________________________________________________ Dates of Conference_____________________________________________________ Total estimated costs

  6. GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014

    E-Print Network [OSTI]

    Li, Mo

    GEORGIA INSTITUTE OF TECHNOLOGY FABRICATED PROPERTY REPORT Revised 07-2014 TO: Property Control: ____________________________________________ Phone: _______________ COST OF PROPERTY Materials or Component Parts $ _______________ External Labor Costs $ _______________ Transportation $ _______________ Other Costs (explain on back

  7. Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel Funds

    E-Print Network [OSTI]

    Sherrill, David

    Georgia Institute of Technology School of Chemistry and Biochemistry Johnson Graduate Student Travel funds may be used to meet any remaining costs not covered by the research advisor, SGA award_____________________________________________________ Total estimated costs for attending conference Transportation $_______________ Other Travel

  8. Computers and nautical archaeology: characterization of the C.S.S. Georgia wreck site 

    E-Print Network [OSTI]

    Baker, James Graham

    1982-01-01

    , Savannah District, to investigate, characterize, and make recommendations regarding the wreck site of a Civil War period Confederate ironclad vessel, the C. S. S. GEORGIA. The survey proved to be difficult, since visibility in the Savannah River around... than two hours per day. A study of the history of the C. S, S. GEORGIA left many questions unanswered, such as her length and breadth. In order to provide accu- rate information and a meaningful site assessment, a series of remote- sensing surveys...

  9. Polarization-engineered GaN/InGaN/GaN tunnel diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth [Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

    2010-11-15

    We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In{sub 0.33}Ga{sub 0.67}N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm{sup 2} at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm{sup 2}. These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

  10. GaInNAs laser gain

    SciTech Connect (OSTI)

    CHOW,WENG W.; JONES,ERIC D.; MODINE,NORMAND A.; KURTZ,STEVEN R.; ALLERMAN,ANDREW A.

    2000-05-23

    The optical gain spectra for GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of the lasing threshold current density of GaInNAs/GaAs quantum well structures.

  11. Advantages of the Blue InGaN/GaN Light-Emitting Diodes with an AlGaN/GaN/AlGaN Quantum Well Structured Electron Blocking Layer

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ABSTRACT: InGaN/GaN light-emitting diodes (LEDs) with p-(AlGaN/GaN/AlGaN) quantum well structured electron. The proposed QWEBL LED structure, in which a p-GaN QW layer is inserted in the p-AlGaN electron blocking layer the radiative recombination rates across the active region. Consequently, the light output power was enhanced

  12. Red emitting photonic devices using InGaP/InGaAlP material system

    E-Print Network [OSTI]

    Kangude, Yamini

    2005-01-01

    In this thesis, two red emitting photonic devices are presented using the InGaP/InGaAlP material system. InGaP/InGaAlP material system provides large flexibility in the band gap energy while being lattice matched to GaAs ...

  13. Energy conserving site design case study: Shenandoah, Georgia. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-01-01

    The case study examines the means by which energy conservation can be achieved at an aggregate community level by using proper planning and analytical techniques for a new town, Shenandoah, Georgia, located twenty-five miles southwest of Atlanta's Hartsfield International Airport. A potentially implementable energy conservation community plan is achieved by a study team examining the land use options, siting characteristics of each building type, alternate infrastructure plans, possible decentralized energy options, and central utility schemes to determine how community energy conservation can be achieved by use of pre-construction planning. The concept for the development of mixed land uses as a passively sited, energy conserving community is based on a plan (Level 1 Plan) that uses the natural site characteristics, maximizes on passive energy siting requirement, and allows flexibility for the changing needs of the developers. The Level 2 Plan is identical with Level 1 plan plus a series of decentraized systems that have been added to the residential units: the single-family detached, the apartments, and the townhouses. Level 3 Plan is similar to the Level 1 Plan except that higher density dwellings have been moved to areas adjacent to central site. The total energy savings for each plan relative to the conventional plan are indicated. (MCW)

  14. GaAs, AlGaAs and InGaP Tunnel Junctions for Multi-Junction Solar Cells Under Concentration: Resistance Study

    SciTech Connect (OSTI)

    Wheeldon, Jeffrey F.; Valdivia, Christopher E.; Walker, Alex; Kolhatkar, Gitanja; Hall, Trevor J.; Hinzer, Karin; Masson, Denis; Riel, Bruno; Fafard, Simon; Jaouad, Abdelatif; Turala, Artur; Ares, Richard; Aimez, Vincent

    2010-10-14

    The following four TJ designs, AlGaAs/AlGaAs, GaAs/GaAs, AlGaAs/InGaP and AlGaAs/GaAs are studied to determine minimum doping concentration to achieve a resistance of <10{sup -4} {omega}{center_dot}cm{sup 2} and a peak tunneling current suitable for MJ solar cells up to 1500-suns concentration (operating current of 21 A/cm{sup 2}). Experimentally calibrated numerical models are used to determine how the resistance changes as a function of doping concentration. The AlGaAs/GaAs TJ design is determined to require the least doping concentration to achieve the specified resistance and peak tunneling current, followed by the GaAs/GaAs, and AlGaAs/AlGaAs TJ designs. The AlGaAs/InGaP TJ design can only achieve resistances >5x10{sup -4} {omega}cm{sup 2}.

  15. APS-DPP 2004, Savannah, Georgia 1 of 18T. Biewer, November 19th Edge Ion Heating by Launched High

    E-Print Network [OSTI]

    Biewer, Theodore

    Society Division of Plasma Physics Meeting Savannah, Georgia, 2004 #12;46th APS-DPP 2004, Savannah46th APS-DPP 2004, Savannah, Georgia 1 of 18T. Biewer, November 19th , 2004 Edge Ion Heating Physics Laboratory P.M. Ryan Oak Ridge National Laboratory and the NSTX Team 46th American Physical

  16. Ossabest: E-Exploration of Ossabaw Island for Students and Teachers: Information Technologies Education Meets Georgia Performance Standards

    E-Print Network [OSTI]

    Reed, Joy

    Ossabest: E-Exploration of Ossabaw Island for Students and Teachers: Information Technologies on a Georgia barrier island. Teaching and learning experiences are enhanced by educational materials designed to meet Georgia Performance Standards. A project web portal offers custom sub-systems created for defined

  17. Ecological investigation of a hazardous waste site, Warner Robins, Georgia

    SciTech Connect (OSTI)

    Wade, M. [Oak Ridge National Lab., TN (United States); Billig, P. [Camp Dresser and McKee, Inc., Denver, CO (United States)

    1993-05-01

    Landfill No. 4 and the sludge lagoon at Robins Air Force Base, Warner Robins, Georgia, were added to the United States Environmental Protection Agency (EPA) National Priorities List in 1987 because of highpotential for contaminant migration. Warner Robins is located approximately 90 miles southeast of Atlanta. In 1990 CH2M HILL conducted a Remedial Investigation at the base that recommended that further ecological assessment investigations be conducted (CH2M HILL 1990). The subject paper is the result of this recommendation. The ecological study was carried out by the Hazardous Waste Remedial Actions Program (HAZWRAP)Division of Martin Marietta Energy Systems, Inc., working jointly with its subcontractor CDM (CDM 1992a). The primary area of investigation (Zone 1) included the sludge lagoon, Landfill No. 4, the wetland area east of the landfill and west of Hannah Road (including two sewage treatment ponds), and the area between Hannah Road and Horse Creek (Fig. 1). The bottomland forest wetlands of Zone 1 extend from the landfill east to Horse Creek. Surface water and groundwater flow across Zone 1 is generally in an easterly direction toward Horse Creek. Horse Creek is a south-flowing tributary of the Ocmulgee River Floodplain. The objective of the study was to perform a quantitative analysis of ecological risk associated with the ecosystems present in Zone 1. This investigation was unique because the assessment was to be based upon many measurement endpoints resulting in both location-specific data and data that would assess the condition of the overall ecosystem. The study was segregated into five distinct field investigations: hydrology, surface water and sediment, aquatic biology, wetlands ecology, and wildlife biology.

  18. GaAs MOEMS Technology

    SciTech Connect (OSTI)

    SPAHN, OLGA B.; GROSSETETE, GRANT D.; CICH, MICHAEL J.; TIGGES, CHRIS P.; RENO, JOHN L.; PEAKE, GREGORY M.; KLEM, JOHN F.; LEAN, JEN; FULLER, CHARLES T.; BURKHART, JEFF; BAUER, THOMAS; SULLIVAN, CHARLES T.

    2003-03-01

    Many MEMS-based components require optical monitoring techniques using optoelectronic devices for converting mechanical position information into useful electronic signals. While the constituent piece-parts of such hybrid opto-MEMS components can be separately optimized, the resulting component performance, size, ruggedness and cost are substantially compromised due to assembly and packaging limitations. GaAs MOEMS offers the possibility of monolithically integrating high-performance optoelectronics with simple mechanical structures built in very low-stress epitaxial layers with a resulting component performance determined only by GaAs microfabrication technology limitations. GaAs MOEMS implicitly integrates the capability for radiation-hardened optical communications into the MEMS sensor or actuator component, a vital step towards rugged integrated autonomous microsystems that sense, act, and communicate. This project establishes a new foundational technology that monolithically combines GaAs optoelectronics with simple mechanics. Critical process issues addressed include selectivity, electrochemical characteristics, and anisotropy of the release chemistry, and post-release drying and coating processes. Several types of devices incorporating this novel technology are demonstrated.

  19. Intense terahertz emission from molecular beam epitaxy-grown GaAs/GaSb(001)

    SciTech Connect (OSTI)

    Sadia, Cyril P.; Laganapan, Aleena Maria; Agatha Tumanguil, Mae; Estacio, Elmer; Somintac, Armando; Salvador, Arnel; Que, Christopher T.; Yamamoto, Kohji; Tani, Masahiko

    2012-12-15

    Intense terahertz (THz) electromagnetic wave emission was observed in undoped GaAs thin films deposited on (100) n-GaSb substrates via molecular beam epitaxy. GaAs/n-GaSb heterostructures were found to be viable THz sources having signal amplitude 75% that of bulk p-InAs. The GaAs films were grown by interruption method during the growth initiation and using various metamorphic buffer layers. Reciprocal space maps revealed that the GaAs epilayers are tensile relaxed. Defects at the i-GaAs/n-GaSb interface were confirmed by scanning electron microscope images. Band calculations were performed to infer the depletion region and electric field at the i-GaAs/n-GaSb and the air-GaAs interfaces. However, the resulting band calculations were found to be insufficient to explain the THz emission. The enhanced THz emission is currently attributed to a piezoelectric field induced by incoherent strain and defects.

  20. Computational analysis of thin film InGaAs/GaAs quantum well solar cells with

    E-Print Network [OSTI]

    Yu, Edward T.

    Computational analysis of thin film InGaAs/GaAs quantum well solar cells with back side light, Austin, TX 78758, USA * ety@ece.utexas.edu Abstract: Simulations of thin film (~2.5 µm thick) InGaAs/GaAs. Roberts, G. Hill, and C. Calder, "Progress in quantum well solar cells," Thin Solid Films 511­512, 76

  1. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response

    E-Print Network [OSTI]

    Jalali. Bahram

    into existing multijunction cells either as a means to increase the current or efficiency by using low band gapGaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response R. B infrared spectral response of GaAs-based solar cells that incorporate type II GaSb quantum dots QDs formed

  2. Plant Physiol. (1992) 99, 548-552 0032-0889/92/99/0548/05/$01 .00/0

    E-Print Network [OSTI]

    Kieliszewski, Marcia

    1992-01-01

    , The University of Georgia, Athens, Georgia 30602 (M.J.K.); Michigan State University-Department of Energy Plant monocot (Zea mays) and a chenopod (Beta vulgaris) representative of primitive dicots. Because

  3. BYRDINE F. LEWIS SCHOOL OF NURSING AND HEALTH PROFESSIONS GEORGIA STATE UNIVERSITY

    E-Print Network [OSTI]

    Frantz, Kyle J.

    1 BYLAWS* BYRDINE F. LEWIS SCHOOL OF NURSING AND HEALTH PROFESSIONS GEORGIA STATE UNIVERSITY Professions: April 4, 2013 #12;2 ARTICLE I PURPOSE Section 1. To provide the essential framework governing Professions (BFLSNHP) that is composed of the School of Nursing, Departments of Nutrition, Physical Therapy

  4. Approved Program of Study for Undergraduate Minors Georgia Institute of Technology

    E-Print Network [OSTI]

    Sherrill, David

    of depth courses related to energy systems. A list of acceptable courses which meet the depth requirementApproved Program of Study for Undergraduate Minors Georgia Institute of Technology Office of the Registrar 2015-2016 Minor in Energy Systems (Track for Chemistry and Biochemistry Students) Please type

  5. Curriculum Innovation Award Center for the Enhancement of Teaching and Learning, Georgia Tech

    E-Print Network [OSTI]

    Gaucher, Eric

    Curriculum Innovation Award Center for the Enhancement of Teaching and Learning, Georgia Tech Nomination Packet for Dr. Tristan Utschig February 2015 Table of Contents Description of the Innovation . . . . . . 1 Problem or student learning issue it addresses 1 Objectives of the innovation 2 Learning outcomes

  6. Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia Institute of Technology

    E-Print Network [OSTI]

    California at Davis, University of

    Project Title Improved Emission Models for Project Evaluation (MOVES-Matrix) University Georgia or organization) DOT - $92,292.15 Total Project Cost $92,292.15 Agency ID or Contract Number DTRT13-G-UTC29 Start and End Dates November 1, 2013 ­ June 30, 2015 Brief Description of Research Project Local governments

  7. Recommendations for Improving Fecal Coliform Pollution Control in Gwinnett County, Georgia

    E-Print Network [OSTI]

    Radcliffe, David

    Recommendations for Improving Fecal Coliform Pollution Control in Gwinnett County, Georgia Upper for Improving Fecal Coliform Pollution Control 2 1.0 BACKGROUND and INTRODUCTION The 1972 Amendments to the Federal Clean Water Act require the creation of a Total Maximum Daily Load (TMDL) for a body of water

  8. Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power Plants

    E-Print Network [OSTI]

    Hutcheon, James M.

    Color Removal from Pulp Mill Effluent Using Coal Ash Produced from Georgia Coal Combustion Power color from pulp mill effluent using coal ash. Prevent coal ash adsorbent from leaching arsenic, chromium, lead, and zinc. Define a treatment procedure using coal ash that will result in the maximum

  9. The Georgia Tech Unmanned Aerial Research Vehicle: GTMax Eric N. Johnson* and Daniel P. Schrage

    E-Print Network [OSTI]

    Johnson, Eric N.

    The Georgia Tech Unmanned Aerial Research Vehicle: GTMax Eric N. Johnson* and Daniel P. Schrage This paper describes the design, development, and operation of a research Unmanned Aerial Vehicle (UAV be utilized. INTRODUCTION This paper presents the development of an open system Unmanned Aerial Vehicle (UAV

  10. New GaInP/GaAs/GaInAs, Triple-Bandgap, Tandem Solar Cell for High-Efficiency Terrestrial Concentrator Systems

    SciTech Connect (OSTI)

    Kurtz, S.; Wanlass, M.; Kramer, C.; Young, M.; Geisz, J.; Ward, S.; Duda, A.; Moriarty, T.; Carapella, J.; Ahrenkiel, P.; Emery. K.; Jones, K.; Romero, M.; Kibbler, A.; Olson, J.; Friedman, D.; McMahon, W.; Ptak, A.

    2005-11-01

    GaInP/GaAs/GaInAs three-junction cells are grown in an inverted configuration on GaAs, allowing high quality growth of the lattice matched GaInP and GaAs layers before a grade is used for the 1-eV GaInAs layer. Using this approach an efficiency of 37.9% was demonstrated.

  11. InGaAsN/GaAs heterojunction for multi-junction solar cells

    DOE Patents [OSTI]

    Kurtz, Steven R. (Albuquerque, NM); Allerman, Andrew A. (Albuquerque, NM); Klem, John F. (Albuquerque, NM); Jones, Eric D. (Edgewood, NM)

    2001-01-01

    An InGaAsN/GaAs semiconductor p-n heterojunction is disclosed for use in forming a 0.95-1.2 eV bandgap photodetector with application for use in high-efficiency multi-junction solar cells. The InGaAsN/GaAs p-n heterojunction is formed by epitaxially growing on a gallium arsenide (GaAs) or germanium (Ge) substrate an n-type indium gallium arsenide nitride (InGaAsN) layer having a semiconductor alloy composition In.sub.x Ga.sub.1-x As.sub.1-y N.sub.y with 0GaAs layer, with the InGaAsN and GaAs layers being lattice-matched to the substrate. The InGaAsN/GaAs p-n heterojunction can be epitaxially grown by either molecular beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD). The InGaAsN/GaAs p-n heterojunction provides a high open-circuit voltage of up to 0.62 volts and an internal quantum efficiency of >70%.

  12. Band Structure of Strain-Balanced GaAsBi/GaAsN Super-lattices on GaAs

    SciTech Connect (OSTI)

    Hwang, J.; Phillips, J. D.

    2011-05-31

    GaAs alloys with dilute content of Bi and N provide a large reduction in band-gap energy with increasing alloy composition. GaAsBi/GaAsN heterojunctions have a type-II band alignment, where superlattices based on these materials offer a wide range for designing effective band-gap energy by varying superlattice period and alloy composition. The miniband structure and effective band gap for strain-balanced GaAsBi/GaAsN superlattices with effective lattice match to GaAs are calculated for alloy compositions up to 5% Bi and N using the k·p method. The effective band gap for these superlattices is found to vary between 0.89 and 1.32 eV for period thickness ranging from 10 to 100 Å. The joint density of states and optical absorption of a 40/40 Å GaAs0.96Bi0.04/GaAs0.98N0.02 superlattice are reported demonstrating a ground-state transition at 1.005 eV and first excited transition at 1.074 eV. The joint density of states is similar in magnitude to GaAs, while the optical absorption is approximately one order of magnitude lower due to the spatially indirect optical transition in the type-II structure. The GaAsBi/GaAsN system may provide a new material system with lattice match to GaAs in a spectral range of high importance for optoelectronic devices including solar cells, photodetectors, and light emitters.

  13. Magnetism and transport properties of epitaxial Fe-Ga thin films on GaAs(001)

    SciTech Connect (OSTI)

    Duong Anh Tuan; Shin, Yooleemi; Cho, Sunglae; Dang Duc Dung; Vo Thanh Son

    2012-04-01

    Epitaxial Fe-Ga thin films in disordered bcc {alpha}-Fe crystal structure (A2) have been grown on GaAs(001) by molecular beam epitaxy. The saturated magnetization (M{sub S}) decreased from 1371 to 1105 kA/m with increasing Ga concentration from 10.5 to 24.3 % at room temperature. The lattice parameter increased with the increase in Ga content because of the larger atomic radius of Ga atom than that of Fe. The increase in carrier density with Ga content caused in lower resistivity.

  14. Graphene induced remote surface scattering in graphene/AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Liu, Xiwen; Li, Dan; Wang, Bobo; Liu, Bin; Chen, Famin; Jin, Guangri; Lu, Yanwu, E-mail: ywlu@bjtu.edu.cn [Department of Physics, Beijing Jiaotong University, Beijing 100044 (China)

    2014-10-20

    The mobilities of single-layer graphene combined with AlGaN/GaN heterostructures on two-dimensional electron gases in graphene/AlGaN/GaN double heterojunction are calculated. The impact of electron density in single-layer graphene is also studied. Remote surface roughness (RSR) and remote interfacial charge (RIC) scatterings are introduced into this heterostructure. The mobilities limited by RSR and RIC are an order of magnitude higher than that of interface roughness and misfit dislocation. This study contributes to designing structures for generation of higher electron mobility in graphene/AlGaN/GaN double heterojunction.

  15. Summary of Needs and Opportunities from the 2011 Residential Energy Efficiency Stakeholders Meeting: Atlanta, Georgia -- March 16-18, 2011

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    This summary report outlines needs and issues for increasing energy efficiency of new and existing U.S homes, as identified at the U.S Department of Energy Building America program Spring 2011 stakeholder meeting in Atlanta, Georgia.

  16. A Unit of the University System of Georgia An Equal Education and Employment Opportunity Institution Environmental Health and Safety

    E-Print Network [OSTI]

    Li, Mo

    A Unit of the University System of Georgia An Equal Education and Employment Opportunity Institution Environmental Health and Safety GT Fire Safety Office 955 Fowler Street, 3rd Floor Room 301A

  17. Georgia Southern University Career Services Williams Center (912) 478-5197 www.georgiasouthern.edu/career/ Explore. Experience. Excel.

    E-Print Network [OSTI]

    Hutcheon, James M.

    · Enterprise Resource Planning Sys. (SAP) · Accounting Information Systems · Business Application Development Developers · Project Analysts · Technical Consultant · Systems Programmer · Internet Developers · Application System Managers · Project Managers What Can I Do With A Major In . . . INFORMATION SYSTEMS #12;Georgia

  18. EA-1865: Department of Energy Loan Guarantee to Kior, Inc., for Biorefinery Facilities in Georgia, Mississippi, and Texas

    Broader source: Energy.gov [DOE]

    This EA will evaluate the environmental impacts of a proposal to issue a Federal loan guarantee to Kior, Inc., for biorefinery facilities in Georgia, Mississippi, and Texas. This EA is on hold.

  19. c Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copyright 2009. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School. If the MOSFET is in the pinch-off region, the following equations for ID hold: ID = K (VGS - VT H)2 (5) 2 #12

  20. AlGaAsSb/GaSb Distributed Bragg Reflectors Grown by Organometallic Vapor Phase Epitaxy

    SciTech Connect (OSTI)

    C.A. Wang; C.J. Vineis; D.R. Calawa

    2002-02-13

    The first AlGaAsSb/GaSb quarter-wave distributed Bragg reflectors grown by metallic vapor phase epitaxy are reported. The peak reflectance is 96% for a 10-period structure.

  1. Impact of electrochemical process on the degradation mechanisms of AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    Gao, Feng, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    AlGaN/GaN high electron mobility transistors (HEMTs) constitute a new generation of transistors with excellent electrical characteristics and great potential to replace silicon technology in the future, especially in high ...

  2. GaN nanowires show more 3D piezoelectricity than bulk GaN

    E-Print Network [OSTI]

    Espinosa, Horacio D.

    director cds murder nudity soundtrack BBC movie releases footage worth documentary film Blu-rays Blu-ray Ga

  3. GaInP/GaAs/GaInAs Monolithic Tandem Cells for High-Performance Solar Concentrators

    SciTech Connect (OSTI)

    Wanlass, M. W.; Ahrenkiel, S. P.; Albin, D. S.; Carapella, J. J.; Duda, A.; Emery, K.; Geisz, J. F.; Jones, K.; Kurtz, S.; Moriarty, T.; Romero, M. J.

    2005-08-01

    We present a new approach for ultra-high-performance tandem solar cells that involves inverted epitaxial growth and ultra-thin device processing. The additional degree of freedom afforded by the inverted design allows the monolithic integration of high-, and medium-bandgap, lattice-matched (LM) subcell materials with lower-bandgap, lattice-mismatched (LMM) materials in a tandem structure through the use of transparent compositionally graded layers. The current work concerns an inverted, series-connected, triple-bandgap, GaInP (LM, 1.87 eV)/GaAs (LM, 1.42 eV)/GaInAs (LMM, {approx}1 eV) device structure grown on a GaAs substrate. Ultra-thin tandem devices are fabricated by mounting the epiwafers to pre-metallized Si wafer handles and selectively removing the parent GaAs substrate. The resulting handle-mounted, ultra-thin tandem cells have a number of important advantages, including improved performance and potential reclamation/reuse of the parent substrate for epitaxial growth. Additionally, realistic performance modeling calculations suggest that terrestrial concentrator efficiencies in the range of 40-45% are possible with this new tandem cell approach. A laboratory-scale (0.24 cm2), prototype GaInP/GaAs/GaInAs tandem cell with a terrestrial concentrator efficiency of 37.9% at a low concentration ratio (10.1 suns) is described, which surpasses the previous world efficiency record of 37.3%.

  4. Spontaneous emission in GaN/InGaN photonic crystal nanopillars

    E-Print Network [OSTI]

    Boyer, Edmond

    . Sigalas, "InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal, "III-nitride blue and ultraviolet photonic crystal light emitting diodes," Appl. Phys. Lett. 84, 466, and H. Benisty, "Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution

  5. Switchable piezoelectric transduction in AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    This work presents a new switching mechanism in piezoelectric transduction of AlGaN/GaN bulk acoustic resonators. A piezoelectric transducer is formed in the AlGaN, between a top Schottky electrode and a 2D electron gas ...

  6. Landscape influences on headwater streams on Fort Stewart, Georgia, USA

    SciTech Connect (OSTI)

    Jager, Yetta [ORNL; Bevelhimer, Mark S [ORNL; al., et. [Various Institutes

    2011-01-01

    Military landscapes represent a mixture of undisturbed natural ecosystems, developed areas, and lands that support different types and intensities of military training. Research to understand water-quality influences of military landscapes usually involves intensive sampling in a few watersheds. In this study, we developed a survey design of accessible headwater watersheds intended to improve our ability to distinguish land water relationships in general, and training influences, in particular, on Fort Stewart, GA. We sampled and analyzed water from watershed outlets. We successfully developed correlative models for total suspended solids (TSS), total nitrogen (TN), organic carbon (OC), and organic nitrogen (ON), which dominated in this blackwater ecosystem. TSS tended to be greater in samples after rainfall and during the growing season, and models that included %Wetland suggested a build-and-flush relationship. We also detected a positive association between TSS and tank-training, which suggests a need to intercept sediment-laden runoff from training areas. Models for OC showed a negative association with %Grassland. TN and ON both showed negative associations with %Grassland, %Wetland, and %Forest. Unexpected positive associations were observed between OC and equipmenttraining activity and between ON and %Bare ground ? Roads. Future studies that combine our survey-based approach with more intensive monitoring of the timing and intensity of training would be needed to better understand the mechanisms for these empirical relationships involving military training. Looking beyond local effects on Fort Stewart streams, we explore questions about how exports of OC and nitrogen from coastal military installations ultimately influence estuaries downstream.

  7. Scientific Achievement Networks of highly photoresponsive crystalline GaSe

    E-Print Network [OSTI]

    Geohegan, David B.

    Scientific Achievement Networks of highly photoresponsive crystalline GaSe nanosheets a crystalline GaSe target was adjusted to directly grow networks of interconnected triangular GaSe crystalline nanosheets of ~ 200 nm size (inset shows atomic

  8. Georgia Tech Manufacturing Institute | 813 Ferst Drive, N.W. | Atlanta, GA 30332-0560 | (404) 894-9100 | www.manufacturing.gatech.edu Manufacturing is in Georgia Tech's DNA: GTMI Binds it Together

    E-Print Network [OSTI]

    Das, Suman

    -suited for the rapidly evolving world of manufacturing. Collaboration and Innovation are Core Strengths Among GTMI partners · Awarded a grant to develop and lead the Consortium for Accelerated Innovation and Insertion for electronics, solar energy, woodworking and precision machining industries that allow companies to easily work

  9. Development of metallization for GaAs and AlGaAs concentrator solar cells

    SciTech Connect (OSTI)

    Tobin, S.P.

    1987-04-01

    A three-layer metallization system was developed for high temperature stability on GaAs and AlGaAs solar cells. The layers are a Pt ohmic contact metal that forms thermally stable compounds with GaAs, a TiN diffusion barrier, and a gold conductor. The solar cell structure was also designed for contact stability, with the key component being a heavily doped GaAs cap layer. Reactively sputtered TiN was found to act as an excellent barrier when deposited under the proper conditions. The conditions were carefully optimized for low resistivity and low stress in the films. A low but nonzero substrate bias during sputtering was found to be important. Solar cells with sputtered metallizations of Pt/TiN/Ti/Pt/Au were found to be thermally stable up to 500/sup 0/C for 15 minutes in vacuum. At 600/sup 0/C there was catastrophic degradation of the cells due to dissociation of uncapped GaAs surfaces. Below this temperature the metallization performed as designed. The Pt and GaAs layers reacted to form a stable PtGa compound layer that gave low contact resistance. There was no penetration of Au or GaAs through the barrier layer. These results are a very encouraging first step leading to stable, reliable GaAs and AlGaAs concentrator cells.

  10. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; Worschech, L.; Gru?tzmacher, D.

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaN to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.

  11. Atlanta, Georgia 30332-0205 U.S.A. Phone: 4048942300 web site: http://www.isye.gatech.edu Fax: 4048942301

    E-Print Network [OSTI]

    Gaucher, Eric

    : 404·894·2301 A Unit of the University System of Georgia An Equal Education and Employment Opportunity, 2014 Dear Members of the CETL Awards Committee, I am pleased to nominate Assistant Professor Kamran://www.isye.gatech.edu Fax: 404·894·2301 A Unit of the University System of Georgia An Equal Education and Employment

  12. t h e s c h e l l e r c o l l e g e o f b u s i n e s s Georgia Tech PhD Program

    E-Print Network [OSTI]

    Li, Mo

    're creating a new standard in business education. Sincerely, Steve Salbu Dean of Georgia Tech's Schellert h e s c h e l l e r c o l l e g e o f b u s i n e s s Georgia Tech PhD Program Accounting, Organizational Behavior, Strategic Management Application and Admission Frequently Asked Questions Georgia Tech

  13. Ohmic contacts to n-GaSb 

    E-Print Network [OSTI]

    Yang, Zhengchong

    1997-01-01

    In recent years, the Ill-V semiconductor GaSb and its ternary alloys containing antimony have exhibited interesting electrical and optical properties for device applications which include negative resistance tunnel devices, lasers, detectors and FET...

  14. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  15. A multicolor, broadband (520m), quaternary-capped InAs/GaAs quantum dot infrared photodetector

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Mumbai 400076, India 2 Department of Physics & Astronomy, Georgia State University, Atlanta, Georgia. Using strain field and multi-band k Á p theory, we map specific bound-to-bound and bound

  16. Baldwin County, Georgia ASHRAE 169-2006 Climate Zone | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex AAustriaBiofuels Brasil JumpGeorgia:BalchAlabama:

  17. Downtown Athens DWBrooksMall

    E-Print Network [OSTI]

    Arnold, Jonathan

    STATION RD Rivers Crossing University Health Center CAES Activity Center Visitors Center (Four Towers

  18. Review of Multi-Person Exposure Calls to a Regional Poison Control Center

    E-Print Network [OSTI]

    Morgan, Brent W; Skinner, Carl G; Kleiman, Richard J; Geller, Robert J; Chang, Arthur S

    2010-01-01

    Exposure Calls to a Regional Poison Control Center Brent W.Medicine and the Georgia Poison Center, Atlanta, GA †of Pediatrics and the Georgia Poison Center, Atlanta, GA

  19. InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

    SciTech Connect (OSTI)

    Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

    2014-10-06

    InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450?nm) light emitting diode. A voltage drop of 5.3?V at 100?mA, forward resistance of 2 × 10{sup ?2} ? cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5?×?10{sup ?4} ? cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. The depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.

  20. Journal of Crystal Growth 298 (2007) 272275 Dislocation analysis in homoepitaxial GaInN/GaN light emitting

    E-Print Network [OSTI]

    Wetzel, Christian M.

    2007-01-01

    of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished were much improved. The optical output power of the light emitting diode increased by more than one. Cathodoluminescence; A1. Threading dislocation density; A2. Homoepitaxial growth; B1. GaInN; B3. Light emitting diode

  1. Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys and Alexander A. Balandin

    E-Print Network [OSTI]

    Thermoelectric effects in wurtzite GaN and AlxGa1-xN alloys Weili Liua and Alexander A. Balandin have investigated theoretically the thermoelectric effects in wurtzite GaN crystals and AlxGa1-xN-based alloys may have some potential as thermoelectric materials at high temperature. It was found

  2. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  3. 1Georgia Southern University Fact Book 2007--2008 I am pleased to present the 2007-08 edition of the Georgia Southern University Fact Book. This publication is the definitive

    E-Print Network [OSTI]

    Hutcheon, James M.

    1Georgia Southern University Fact Book 2007--2008 I am pleased to present the 2007-08 edition throughout the country and the world with the launch of our online degree programs. These programs enable- tinues to expand, adding high-tech facilities to our student-centered campus and new degree programs

  4. 1Georgia Southern University Fact Book 2006--2007 I am pleased to present the 2006-07 edition of the Georgia Southern University Fact Book. This publication is the definitive

    E-Print Network [OSTI]

    Hutcheon, James M.

    1Georgia Southern University Fact Book 2006--2007 I am pleased to present the 2006-07 edition, but new degree programs and outreach initiatives benefiting the people and economic development of our distinction to the institution through ongoing research, scholarship and community service. This edition

  5. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

    SciTech Connect (OSTI)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Wetzel, Christian, E-mail: wetzel@ieee.org [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States) [Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Future Chips Constellation, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180 (United States); Lee, S. C.; Brueck, S. R. J. [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States)] [Department of Electrical and Computer Engineering and Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Jiang, Y.-B. [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)] [Department of Earth and Planetary Science, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2013-12-02

    GaInN/GaN light-emitting diodes free of piezoelectric polarization were prepared on standard electronic-grade Si(100) substrates. Micro-stripes of GaN and GaInN/GaN quantum wells in the cubic crystal structure were grown on intersecting (111) planes of microscale V-grooved Si in metal-organic vapor phase epitaxy, covering over 50% of the wafer surface area. Crystal phases were identified in electron back-scattering diffraction. A cross-sectional analysis reveals a cubic structure virtually free of line defects. Electroluminescence over 20 to 100??A is found fixed at 487?nm (peak), 516?nm (dominant). Such structures therefore should allow higher efficiency, wavelength-stable light emitters throughout the visible spectrum.

  6. A hole accelerator for InGaN/GaN light-emitting diodes

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Liu, Wei; Tan, Swee Tiam; Ji, Yun; Wang, Liancheng; Zhu, Binbin; Zhang, Yiping; Lu, Shunpeng; Zhang, Xueliang; Hasanov, Namig; Sun, Xiao Wei, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Demir, Hilmi Volkan, E-mail: EXWSUN@ntu.edu.sg, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Department of Electrical and Electronics, Department of Physics, and UNAM-Institute of Material Science and Nanotechnology, Bilkent University, TR-06800 Ankara (Turkey)

    2014-10-13

    The quantum efficiency of InGaN/GaN light-emitting diodes (LEDs) has been significantly limited by the insufficient hole injection, and this is caused by the inefficient p-type doping and the low hole mobility. The low hole mobility makes the holes less energetic, which hinders the hole injection into the multiple quantum wells (MQWs) especially when a p-type AlGaN electron blocking layer (EBL) is adopted. In this work, we report a hole accelerator to accelerate the holes so that the holes can obtain adequate kinetic energy, travel across the p-type EBL, and then enter the MQWs more efficiently and smoothly. In addition to the numerical study, the effectiveness of the hole accelerator is experimentally shown through achieving improved optical output power and reduced efficiency droop for the proposed InGaN/GaN LED.

  7. Gallium surface diffusion on GaAs (001) surfaces measured by crystallization dynamics of Ga droplets

    SciTech Connect (OSTI)

    Bietti, Sergio, E-mail: sergio.bietti@mater.unimib.it; Somaschini, Claudio; Esposito, Luca; Sanguinetti, Stefano [L–NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, Via Cozzi 55, I–20125 Milano (Italy); Fedorov, Alexey [L–NESS and CNR–IFN, via Anzani 42, I-22100 Como (Italy)

    2014-09-21

    We present accurate measurements of Ga cation surface diffusion on GaAs surfaces. The measurement method relies on atomic force microscopy measurement of the morphology of nano–disks that evolve, under group V supply, from nanoscale group III droplets, earlier deposited on the substrate surface. The dependence of the radius of such nano-droplets on crystallization conditions gives direct access to Ga diffusion length. We found an activation energy for Ga on GaAs(001) diffusion E{sub A}=1.31±0.15 eV, a diffusivity prefactor of D?=0.53(×2.1±1) cm² s?¹ that we compare with the values present in literature. The obtained results permit to better understand the fundamental physics governing the motion of group III ad–atoms on III–V crystal surfaces and the fabrication of designable nanostructures.

  8. Georgia Hosts Multi-Agency Waste Isolation Pilot Plant Transportation Exercise

    Broader source: Energy.gov [DOE]

    COVINGTON, Ga. – Emergency personnel throughout the U.S. who respond in the event of a potential accident involving radioactive waste shipments take part in mock training scenarios to help them prepare for an actual incident.

  9. Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper Science and Technology; Georgia Institute of Technology, Atlanta, GA.

    E-Print Network [OSTI]

    Strategic Utilization of Paper/Wood Waste for Biodiesel Fuel Art J. Ragauskas, Institute of Paper lignocellulosics to biodiesel fuel Feedstocks ABSTRACT This poster examines the potential of utilizing waste paper

  10. c Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School of Electrical and Computer Engineering.

    E-Print Network [OSTI]

    Leach Jr.,W. Marshall

    c° Copywright 2008. W. Marshall Leach, Jr., Professor, Georgia Institute of Technology, School mode or the saturation region when vDS vGS - VTO, where VTO is the threshold or pinch-off voltage parameter which accounts for the change in with drain-source voltage. Because iG ' 0 in the pinch

  11. Georgia Institute of Technology-Minor Degree in Chemistry Page 1 of 2 Date: February 12, 2013 IUCC approval

    E-Print Network [OSTI]

    Sherrill, David

    ) CHEM 4699 Undergraduate Research CHEM 4740 Atmospheric Chemistry (3 credits) CHEM 4775 Polymer Science and Eng. I (3 credits) CHEM 4776 Polymer Science and Engi. II (3 credits) CHEM 4803 Special Topics (withGeorgia Institute of Technology- Minor Degree in Chemistry Page 1 of 2 Date: February 12, 2013 IUCC

  12. Georgia Institute of Technology-Minor Degree in Chemistry Page 1 of 2 Date: January 14, 2014 IUCC approval

    E-Print Network [OSTI]

    Sherrill, David

    credits) CHEM 4775 Polymer Science and Eng. I (3 credits) CHEM 4776 Polymer Science and Engi. II (3Georgia Institute of Technology- Minor Degree in Chemistry Page 1 of 2 Date: January 14, 2014 IUCC of Technology- Minor Degree in Chemistry Page 2 of 2 Date: January 14, 2014 IUCC approval CHEM 3511 Survey

  13. GaN: Defect and Device Issues

    SciTech Connect (OSTI)

    Pearton, S.J.; Ren, F.; Shul, R.J.; Zolper, J.C.

    1998-11-09

    The role of extended and point defects, and key impurities such as C, O and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

  14. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells

    E-Print Network [OSTI]

    Weinstein, Benard.A.

    recently that the temperature shifts of the photo- and electroluminescence EL peak energies in Nichia greenV/GPa for the green and blue diodes, respectively. The observed pressure coefficients are much lower than those characteristic of the energy gap in GaN ( 40 meV/GPa) or the energy gap in InN ( 33 meV/GPa). This kind

  15. InGaAs/GaAs quantum dot interdiffiusion induced by cap layer overgrowth

    SciTech Connect (OSTI)

    Jasinski, J.; Babinski, A.; Czeczott, M.; Bozek, R.

    2000-06-28

    The effect of thermal treatment during and after growth of InGaAs/GaAs quantum dot (QD) structures was studied. Transmission electron microscopy and atomic force microscopy confirmed the presence of interacting QDs, as was expected from analysis of temperature dependence of QD photoluminescence (PL) peak. The results indicate that the effect of post-growth annealing can be similar to the effect of elevated temperature of capping layer growth. Both, these thermal treatments can lead to a similar In and Ga interdiffiusion resulting in a similar blue-shift of QD PL peak.

  16. Optical spectroscopy of quantum confined states in GaAs/AlGaAs quantum well tubes

    SciTech Connect (OSTI)

    Shi, Teng; Fickenscher, Melodie; Smith, Leigh; Jackson, Howard; Yarrison-Rice, Jan; Gao, Qiang; Tan, Hoe; Jagadish, Chennupati; Etheridge, Joanne; Wong, Bryan M.

    2013-12-04

    We have investigated the quantum confinement of electronic states in GaAs/Al{sub x}Ga{sub 1?x}As nanowire heterostructures which contain radial GaAs quantum wells of either 4nm or 8nm. Photoluminescence and photoluminescence excitation spectroscopy are performed on single nanowires. We observed emission and excitation of electron and hole confined states. Numerical calculations of the quantum confined states using the detailed structural information on the quantum well tubes show excellent agreement with these optical results.

  17. Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Limbach, F.; Gotschke, T.; Stoica, T.; Calarco, R.; Sutter, E.; Ciston, J.; Cusco, R.; Artus, L.; Kremling, S.; Ho?fling, S.; et al

    2011-01-01

    InGaN/GaN nanowire (NW) heterostructures grown by plasma assisted molecular beam epitaxy were studied in comparison to their GaN and InGaN counterparts. The InGaN/GaN heterostructure NWs are composed of a GaN NW, a thin InGaN shell, and a multifaceted InGaN cap wrapping the top part of the GaN NW. High-resolution transmission electron microscopy (HRTEM) images taken from different parts of a InGaN/GaN NW show a wurtzite structure of the GaN core and the epitaxial InGaN shell around it, while additional crystallographic domains are observed whithin the InGaN cap region. Large changes in the lattice parameter along the wire, from pure GaNmore »to higher In concentration demonstrate the successful growth of a complex InGaN/GaN NW heterostructure. Photoluminescence (PL) spectra of these heterostructure NW ensembles show rather broad and intense emission peak at 2.1 eV. However, ?-PL spectra measured on single NWs reveal a reduced broadening of the visible luminescence. The analysis of the longitudinal optical phonon Raman peak position and its shape reveal a variation in the In content between 20% and 30%, in agreement with the values estimated by PL and HRTEM investigations. The reported studies are important for understanding of the growth and properties of NW heterostructures suitable for applications in optoelectronics and photovoltaics.« less

  18. IEEE Energy2030 Atlanta, GA USA

    E-Print Network [OSTI]

    Gross, George

    of an aggregation of battery vehicles for the provision of frequency regulation ­ requiring very fast response timesIEEE Energy2030 Atlanta, GA USA 17-18 November, 2008 Design of a Conceptual Framework for the V2G in common is the batteries, which provide good storage capacity that can be effectively integrated

  19. Defect studies in low-temperature-grown GaAs

    SciTech Connect (OSTI)

    Bliss, D.E.

    1992-11-01

    High content of excess As is incorporated in GaAs grown by low-temperature molecular-beam-epitaxy (LTMBE). The excess As exists primarily as As antisite defects AsGa and a lesser extent of gallium vacancies V[sub Ga]. The neutral AsGa-related defects were measured by infrared absorption at 1[mu]m. Gallium vacancies, V[sub Ga], was investigated by slow positron annihilation. Dependence of defect contents on doping was studied by Si and Be dopants. No free carriers are generated by n-type or p-type doping up to 10[sup 19] cm[sup [minus]3] Si or Be. Raman data indicate Be occupies Ga substitutional sites but Si atom is not substitutional. Si induces more As[sub Ga] in the layer. As As[sub Ga] increases, photoquenchable As[sub Ga] decreases. Fraction of photoquenchable defects correlates to defects within 3 nearest neighbor separations disrupting the metastability. Annealing reduces neutral As[sub Ga] content around 500C, similar to irradiation damaged and plastically deformed Ga[sub As], as opposed to bulk grown GaAs in which As[sub Ga]-related defects are stable up to 1100C. The lower temperature defect removal is due to V[sub Ga] enhanced diffusion of As[sub Ga] to As precipitates. The supersaturated V[sub GA] and also decreases during annealing. Annealing kinetics for As[sub Ga]-related defects gives 2.0 [plus minus] 0.3 eV and 1.5 [plus minus] 0.3 eV migration enthalpies for the As[sub Ga] and V[sub Ga]. This represents the difference between Ga and As atoms hopping into the vacancy. The non-photoquenchable As[sub Ga]-related defects anneal with an activation energy of 1.1 [plus minus] 0.3eV. Be acceptors can be activated by 800C annealing. Temperature difference between defect annealing and Be activation formation of As[sub Ga]-Be[sub Ga] pairs. Si donors can only be partially activated.

  20. Electron mobility enhancement in AlN/GaN/AlN heterostructures with InGaN nanogrooves

    E-Print Network [OSTI]

    it was discovered by Davydov et al.1 and con- firmed by independent studies2,3 that its band gap is small, EG InN =0 The conduction band offset at GaN/AlN interface was estimated as EQW=0.7 EG AlN -EG GaN =1918 meV. The nanoN/GaN/AlN QW. The depth of the nanogroove is calculated as E0=0.8 EG GaN -EG InxGa1-xN . The band gap of InxGa1

  1. Effects of the Georgia flood of `94 on Lake Blackshear Dam

    SciTech Connect (OSTI)

    Findlay, R.C.; Northrop, J.H. [Northrop, Devine & Tarbell, Inc., Portland, ME (United States); Crisp, R.L. Jr. [and others

    1995-12-31

    Tropical Storm Alberto produced record rainfall in central Georgia in early July, 1994. The area drains into Lake Blackshear, formed in the Flint River by Lake Blackshear Dam. The level of the lake rose 3.5 m (11.5 ft) above normal and caused the worst flooding of the area in recorded history. The north embankment of the dam was overtopped, causing a 215 m (700 ft) breach. Prior to the breach, a few concentrated boils were observed in the tailwater downstream of the non-breached portion of the dam. This portion remained intact through the flood, but the presence of the boils raised questions regarding its integrity. The effects of the flood on the north embankment are discussed, as well as the geotechnical investigation conducted to assess subsurface conditions at the breach and intact portions and the plan for remediation.

  2. Development and Industrialization of InGaN/GaN LEDs on Patterned...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    epitaxial growth of indium gallium nitride (InGaN) layers capable of producing high-efficiency LEDs when combined with chip-on-board packaging techniques. The proposed...

  3. High-field quasi-ballistic transport in AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Danilchenko, B. A.; Tripachko, N. A.; Belyaev, A. E.; Vitusevich, S. A. Hardtdegen, H.; Lüth, H.

    2014-02-17

    Mechanisms of electron transport formation in 2D conducting channels of AlGaN/GaN heterostructures in extremely high electric fields at 4.2?K have been studied. Devices with a narrow constriction for the current flow demonstrate high-speed electron transport with an electron velocity of 6.8?×?10{sup 7}?cm/s. Such a velocity is more than two times higher than values reported for conventional semiconductors and about 15% smaller than the limit value predicted for GaN. Superior velocity is attained in the channel with considerable carrier reduction. The effect is related to a carrier runaway phenomenon. The results are in good agreement with theoretical predictions for GaN-based materials.

  4. 2DEG electrodes for piezoelectric transduction of AlGaN/GaN MEMS resonators

    E-Print Network [OSTI]

    Weinstein, Dana

    A 2D electron gas (2DEG) interdigitated transducer (IDT) in Gallium Nitride (GaN) resonators is introduced and demonstrated. This metal-free transduction does not suffer from the loss mechanisms associated with more commonly ...

  5. Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

    E-Print Network [OSTI]

    P. A. Rodnyi; I. V. Khodyuk; E. I. Gorokhova; S. B. Mikhrin; P. Dorenbos

    2010-09-07

    The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.

  6. Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

    SciTech Connect (OSTI)

    Bocquel, J.; Koenraad, P. M. [Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands); Giddings, A. D.; Prosa, T. J.; Larson, D. J. [CAMECA Instruments, Inc., 5500 Nobel Drive, Madison, Wisconsin 53711 (United States); Mano, T. [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047 (Japan)

    2014-10-13

    Droplet epitaxy (DE) is a growth method which can create III-V quantum dots (QDs) whose optoelectronic properties can be accurately controlled through the crystallisation conditions. In this work, GaAs/AlGaAs DE-QDs have been analyzed with the complimentary techniques of cross-sectional scanning tunneling microscopy and atom probe tomography. Structural details and a quantitative chemical analysis of QDs of different sizes are obtained. Most QDs were found to be pure GaAs, while a small proportion exhibited high intermixing caused by a local etching process. Large QDs with a high aspect ratio were observed to have an Al-rich crown above the GaAs QD. This structure is attributed to differences in mobility of the cations during the capping phase of the DE growth.

  7. On strongly GA-convex functions and stochastic processes

    SciTech Connect (OSTI)

    Bekar, Nurgül Okur; Akdemir, Hande Günay; ??can, ?mdat

    2014-08-20

    In this study, we introduce strongly GA-convex functions and stochastic processes. We provide related well-known Kuhn type results and Hermite-Hadamard type inequality for strongly GA-convex functions and stochastic processes.

  8. Energy absorption in Ni-Mn-Ga/ polymer composites

    E-Print Network [OSTI]

    Feuchtwanger, Jorge

    2006-01-01

    In recent years Ni-Mn-Ga has attracted considerable attention as a new kind of actuator material. Off-stoichiometric single crystals of Ni2MnGa can regularly exhibit 6% strain in tetragonal martensites and orthorhombic ...

  9. InGaAs/GaAs (110) quantum dot formation via step meandering

    SciTech Connect (OSTI)

    Diez-Merino, Laura; Tejedor, Paloma

    2011-07-01

    InGaAs (110) semiconductor quantum dots (QDs) offer very promising prospects as a material base for a new generation of high-speed spintronic devices, such as single electron transistors for quantum computing. However, the spontaneous formation of InGaAs QDs is prevented by two-dimensional (2D) layer-by-layer growth on singular GaAs (110) substrates. In this work we have studied, by using atomic force microscopy and photoluminescence spectroscopy (PL), the growth of InGaAs/GaAs QDs on GaAs (110) stepped substrates by molecular beam epitaxy (MBE), and the modification of the adatom incorporation kinetics to surface steps in the presence of chemisorbed atomic hydrogen. The as-grown QDs exhibit lateral dimensions below 100 nm and emission peaks in the 1.35-1.37 eV range. It has been found that a step meandering instability derived from the preferential attachment of In adatoms to [110]-step edges relative to [11n]-type steps plays a key role in the destabilization of 2D growth that leads to 3D mound formation on both conventional and H-terminated vicinal substrates. In the latter case, the driving force for 3D growth via step meandering is enhanced by H-induced upward mass transport in addition to the lower energy cost associated with island formation on H-terminated substrates, which results in a high density array of InGaAs/GaAs dots selectively nucleated on the terrace apices with reduced lateral dimensions and improved PL efficiency relative to those of conventional MBE-grown samples.

  10. Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

    SciTech Connect (OSTI)

    Haj?asz, M., E-mail: m.hajlasz@m2i.nl [Materials innovation institute (M2i), Mekelweg 2, 2628 CD, Delft (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Donkers, J. J. T. M.; Sque, S. J.; Heil, S. B. S. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); Gravesteijn, D. J. [NXP Semiconductors Research, High Tech Campus 46, 5656 AE, Eindhoven (Netherlands); MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands); Rietveld, F. J. R. [NXP Semiconductors, Gerstweg 2, 6534 AE, Nijmegen (Netherlands); Schmitz, J. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE, Enschede (Netherlands)

    2014-06-16

    For the determination of specific contact resistance in semiconductor devices, it is usually assumed that the sheet resistance under the contact is identical to that between the contacts. This generally does not hold for contacts to AlGaN/GaN structures, where an effective doping under the contact is thought to come from reactions between the contact metals and the AlGaN/GaN. As a consequence, conventional extraction of the specific contact resistance and transfer length leads to erroneous results. In this Letter, the sheet resistance under gold-free Ti/Al-based Ohmic contacts to AlGaN/GaN heterostructures on Si substrates has been investigated by means of electrical measurements, transmission electron microscopy, and technology computer-aided design simulations. It was found to be significantly lower than that outside of the contact area; temperature-dependent electrical characterization showed that it exhibits semiconductor-like behavior. The increase in conduction is attributed to n-type activity of nitrogen vacancies in the AlGaN. They are thought to form during rapid thermal annealing of the metal stack when Ti extracts nitrogen from the underlying semiconductor. The high n-type doping in the region between the metal and the 2-dimensional electron gas pulls the conduction band towards the Fermi level and enhances horizontal electron transport in the AlGaN. Using this improved understanding of the properties of the material underneath the contact, accurate values of transfer length and specific contact resistance have been extracted.

  11. AlGaAs/GaAs photovoltaic converters for high power narrowband radiation

    SciTech Connect (OSTI)

    Khvostikov, Vladimir; Kalyuzhnyy, Nikolay; Mintairov, Sergey; Potapovich, Nataliia; Shvarts, Maxim; Sorokina, Svetlana; Andreev, Viacheslav; Luque, Antonio

    2014-09-26

    AlGaAs/GaAs-based laser power PV converters intended for operation with high-power (up to 100 W/cm{sup 2}) radiation were fabricated by LPE and MOCVD techniques. Monochromatic (? = 809 nm) conversion efficiency up to 60% was measured at cells with back surface field and low (x = 0.2) Al concentration 'window'. Modules with a voltage of 4 V and the efficiency of 56% were designed and fabricated.

  12. Guided Neuronal Growth on Arrays of Biofunctionalized GaAs/InGaAs Semiconductor Microtubes

    E-Print Network [OSTI]

    Cornelius S. Bausch; Aune Koitmäe; Eric Stava; Amanda Price; Pedro J. Resto; Yu Huang; David Sonnenberg; Yuliya Stark; Christian Heyn; Justin C. Williams; Erik W. Dent; Robert H. Blick

    2013-05-06

    We demonstrate embedded growth of cortical mouse neurons in dense arrays of semiconductor microtubes. The microtubes, fabricated from a strained GaAs/InGaAs heterostructure, guide axon growth through them and enable electrical and optical probing of propagating action potentials. The coaxial nature of the microtubes -- similar to myelin -- is expected to enhance the signal transduction along the axon. We present a technique of suppressing arsenic toxicity and prove the success of this technique by overgrowing neuronal mouse cells.

  13. Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure

    SciTech Connect (OSTI)

    Chowdhury, S; Mishra, UK

    2013-10-01

    Power conversion losses are endemic in all areas of electricity consumption, including motion control, lighting, air conditioning, and information technology. Si, the workhorse of the industry, has reached its material limits. Increasingly, the lateral AlGaN/GaN HEMT based on gallium nitride (GaN-on-Si) is becoming the device of choice for medium power electronics as it enables high-power conversion efficiency and reduced form factor at attractive pricing for wide market penetration. The reduced form factor enabled by high-efficiency operation at high frequency further enables significant system price reduction because of savings in bulky extensive passive elements and heat sink costs. The high-power market, however, still remains unaddressed by lateral GaN devices. The current and voltage demand for high power conversion application makes the chip area in a lateral topology so large that it becomes more difficult to manufacture. Vertical GaN devices would play a big role alongside of silicon carbide (SiC) to address the high power conversion needs. In this paper, the development, performance, and status of lateral and vertical GaN devices are discussed.

  14. GaNPAs Solar Cells Lattice-Matched To GaP: Preprint

    SciTech Connect (OSTI)

    Geisz, J. F.; Friedman, D. J.; Kurtz, S.

    2002-05-01

    This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y= 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single-junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high-efficiency multijunction solar cells based on silicon substrates.

  15. Accurate characterization and improvement of GaAs microstrip attenuation 

    E-Print Network [OSTI]

    Carroll, James Mason

    1992-01-01

    Convergence. III. E. 6 Final Model. III. F Simulation Results for 100 um GaAs. . III. F. 1 On-GaAs Microstrip. III. I', 2 Suspended Microstrip Line . . . . 50 . . . . 51 . . . . 54 . . . . 56 . . . . 56 . . . 56 . . . . 64 64 . . . , 64 III. F. 3... Comparison Between On-GaAs and Suspcndcd Microstrip . . . 68 III. F. 4 Microstrip Inductance III. G EM Parameters in CAD Simulations . . III. H Simulation Results for 150 um GaAs. III. I Conclusions and Recommendations. IV RESEARCH ACCOMPLISHMENTS...

  16. Advanced technologies for improving high frequency performance of AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Chung, Jinwook W. (Jinwook Will)

    2008-01-01

    In this thesis, we have used a combination of physical analysis, numerical simulation and experimental work to identify and overcome some of the main challenges in AlGaN/GaN high electron mobility transistors (HEMTs) for ...

  17. A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+

    E-Print Network [OSTI]

    McKittrick, Joanna

    A New Combustion Synthesis Method for GaN:Eu3+ and Ga2O3 :Eu3+ Luminescent Powders G. A. Hirata1 between the precursors. The preparation of Eu-doped Ga2O3 powders was achieved using a new combustion)3 and Ga(NO3)3 as the precursors and hydrazine as (non-carbonaceous) fuel. A spontaneous combustion

  18. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers

    E-Print Network [OSTI]

    Jalali. Bahram

    Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico optical, electrical, and spectral response characteristics of three-stack InAs/GaAs quantum dot solar

  19. Lattice-Mismatched GaAs/InGaAs Two-Junction Solar Cells by Direct Wafer Bonding

    SciTech Connect (OSTI)

    Tanabe, K.; Aiken, D. J.; Wanlass, M. W.; Morral, A. F.; Atwater, H. A.

    2006-01-01

    Direct bonded interconnect between subcells of a lattice-mismatched III-V compound multijunction cell would enable dislocation-free active regions by confining the defect network needed for lattice mismatch accommodation to tunnel junction interfaces, while metamorphic growth inevitably results in less design flexibility and lower material quality than is desirable. The first direct-bond interconnected multijunction solar cell, a two-terminal monolithic GaAs/InGaAs two-junction solar cell, is reported and demonstrates viability of direct wafer bonding for solar cell applications. The tandem cell open-circuit voltage was approximately the sum of the subcell open-circuit voltages. This achievement shows direct bonding enables us to construct lattice-mismatched III-V multijunction solar cells and is extensible to an ultrahigh efficiency InGaP/GaAs/InGaAsP/InGaAs four-junction cell by bonding a GaAs-based lattice-matched InGaP/GaAs subcell and an InP-based lattice-matched InGaAsP/InGaAs subcell. The interfacial resistance experimentally obtained for bonded GaAs/InP smaller than 0.10 Ohm-cm{sup 2} would result in a negligible decrease in overall cell efficiency of {approx}0.02%, under 1-sun illumination.

  20. Properties of (Ga,Mn)As codoped with Li

    SciTech Connect (OSTI)

    Miyakozawa, Shohei; Chen, Lin; Matsukura, Fumihiro; Ohno, Hideo

    2014-06-02

    We grow Li codoped (Ga,Mn)As layers with nominal Mn composition up to 0.15 by molecular beam epitaxy. The layers before and after annealing are characterized by x-ray diffraction, transport, magnetization, and ferromagnetic resonance measurements. The codoping with Li reduces the lattice constant and electrical resistivity of (Ga,Mn)As after annealing. We find that (Ga,Mn)As:Li takes similar Curie temperature to that of (Ga,Mn)As, but with pronounced magnetic moments and in-plane magnetic anisotropy, indicating that the Li codoping has nontrivial effects on the magnetic properties of (Ga,Mn)As.

  1. 56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar Cells on GaAs

    E-Print Network [OSTI]

    Haller, Gary L.

    solar cells are triple-junction concentrator devices, with each junction efficiently col- lecting subcell in a multijunction de- vice. GaAs0.66 P0.34 single-junction solar cells with Eg = 1.83 eV were56 IEEE JOURNAL OF PHOTOVOLTAICS, VOL. 2, NO. 1, JANUARY 2012 Metamorphic GaAsP and InGaP Solar

  2. Georgia-Pacific Palatka Plant Uses Thermal Pinch Analysis and Evaluates Water Reduction in Plant-Wide Energy Assessment

    SciTech Connect (OSTI)

    2002-12-01

    This OIT BestPractices Case Study describes the methods and results used in a plant-wide assessment at a Georgia-Pacific paper mill in Palatka, FL. Assessment personnel recommended several projects, which, if implemented, have the potential to save the plant more than 729,000 MMBtu per year and $2.9 million per year. In addition, the plant could reduce water use by 2,100 gallons per minute.

  3. Reactive codoping of GaAlInP compound semiconductors

    DOE Patents [OSTI]

    Hanna, Mark Cooper (Boulder, CO); Reedy, Robert (Golden, CO)

    2008-02-12

    A GaAlInP compound semiconductor and a method of producing a GaAlInP compound semiconductor are provided. The apparatus and method comprises a GaAs crystal substrate in a metal organic vapor deposition reactor. Al, Ga, In vapors are prepared by thermally decomposing organometallic compounds. P vapors are prepared by thermally decomposing phospine gas, group II vapors are prepared by thermally decomposing an organometallic group IIA or IIB compound. Group VIB vapors are prepared by thermally decomposing a gaseous compound of group VIB. The Al, Ga, In, P, group II, and group VIB vapors grow a GaAlInP crystal doped with group IIA or IIB and group VIB elements on the substrate wherein the group IIA or IIB and a group VIB vapors produced a codoped GaAlInP compound semiconductor with a group IIA or IIB element serving as a p-type dopant having low group II atomic diffusion.

  4. Three-junction solar cells comprised of a thin-film GaInP/GaAs tandem cell mechanically stacked on a Si cell

    SciTech Connect (OSTI)

    Yazawa, Y.; Tamura, K.; Watahiki, S.; Kitatani, T.; Ohtsuka, H.; Warabisako, T.

    1997-12-31

    Three-junction tandem solar cells were fabricated by mechanical stacking of a thin-film GaInP/GaAs monolithic tandem cell and a Si cell. The epitaxial lift-off (ELO) technique was used for the thinning of GaInP/GaAs tandem cells. Both spectral responses of the GaInP top cell and the GaAs middle cell in the thin-film GaInP/GaAs monolithic tandem cell were conserved. The Si cell performance has been improved by reducing the absorption loss in the GaAs substrate.

  5. Chemical beam epitaxy growth of AlGaAs/GaAs tunnel junctions using trimethyl aluminium for multijunction solar cells

    SciTech Connect (OSTI)

    Paquette, B.; DeVita, M.; Turala, A.; Kolhatkar, G.; Boucherif, A.; Jaouad, A.; Aimez, V.; Arès, R.; Wilkins, M.; Wheeldon, J. F.; Walker, A. W.; Hinzer, K.; Fafard, S.

    2013-09-27

    AlGaAs/GaAs tunnel junctions for use in high concentration multijunction solar cells were designed and grown by chemical beam epitaxy (CBE) using trimethyl aluminium (TMA) as the p-dopant source for the AlGaAs active layer. Controlled hole concentration up to 4?10{sup 20} cm{sup ?3} was achieved through variation in growth parameters. Fabricated tunnel junctions have a peak tunneling current up to 6140 A/cm{sup 2}. These are suitable for high concentration use and outperform GaAs/GaAs tunnel junctions.

  6. 0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1eV)/GaInAs(0.7eV) Four-Junction Solar Cell

    SciTech Connect (OSTI)

    Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W.; Kurtz, S. R.

    2006-01-01

    We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga{sub 0.5}In{sub 0.5} P/GaAs/Ga{sub 0.75}In{sub 0.25}As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga{sub 0.75}In{sub 0.25}As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap Ga{sub x}In{sub 1-x}As fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the Ga{sub x}In{sub 1-x}As fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.

  7. Inkjet-printed RF Energy Harvesting and Wireless Power Trasmission Devices on Paper Substrate

    E-Print Network [OSTI]

    Tentzeris, Manos

    of Electrical and Computer Engineeing, Georgia Institute of Technology, GA, USA Centre Tecnologic de

  8. Upscaling fluxes from tower to landscape: Overlaying flux footprints on high-resolution (IKONOS) images of vegetation cover

    E-Print Network [OSTI]

    Guo, Qinghua

    Laboratory for Environmental Physics, University of Georgia, Griffin, GA 30223-1797, USA d Department

  9. Redefinition and Global Estimation of Basal Ecosystem1 Respiration Rate2

    E-Print Network [OSTI]

    Leclerc, Monique Y.

    Sciences,52 University of Georgia, Griffin, GA 30223, USA53 26 Geobiosphere Science Centre, Physical

  10. Estimating nocturnal ecosystem respiration from the vertical turbulent flux and change in storage of CO2

    E-Print Network [OSTI]

    Chen, Jiquan

    of Georgia, Lab Environmental Physics, Griffin, GA, USA w Department of Physics, University of Helsinki

  11. Biogeosciences, 7, 36253636, 2010 www.biogeosciences.net/7/3625/2010/

    E-Print Network [OSTI]

    Leclerc, Monique Y.

    Laboratory for Environmental Physics, The University of Georgia, 1109 Experiment Street, Griffin, GA 30223

  12. Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Yang, Jie Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

    2013-11-25

    We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5?eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

  13. A InGaN/GaN quantum dot green ({lambda}=524 nm) laser

    SciTech Connect (OSTI)

    Zhang Meng; Banerjee, Animesh; Lee, Chi-Sen; Hinckley, John M.; Bhattacharya, Pallab

    2011-05-30

    The characteristics of self-organized InGaN/GaN quantum dot lasers are reported. The laser heterostructures were grown on c-plane GaN substrates by plasma-assisted molecular beam epitaxy and the laser facets were formed by focused ion beam etching with gallium. Emission above threshold is characterized by a peak at 524 nm (green) and linewidth of 0.7 nm. The lowest measured threshold current density is 1.2 kA/cm{sup 2} at 278 K. The slope and wall plug efficiencies are 0.74 W/A and {approx}1.1%, respectively, at 1.3 kA/cm{sup 2}. The value of T{sub 0}=233 K in the temperature range of 260-300 K.

  14. Photocapacitance study of type-II GaSb/GaAs quantum ring solar cells

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-01-07

    In this study, the density of states associated with the localization of holes in GaSb/GaAs quantum rings are determined by the energy selective charging of the quantum ring distribution. The authors show, using conventional photocapacitance measurements, that the excess charge accumulated within the type-II nanostructures increases with increasing excitation energies for photon energies above 0.9?eV. Optical excitation between the localized hole states and the conduction band is therefore not limited to the ?(k?=?0) point, with pseudo-monochromatic light charging all states lying within the photon energy selected. The energy distribution of the quantum ring states could consequently be accurately related from the excitation dependence of the integrated photocapacitance. The resulting band of localized hole states is shown to be well described by a narrow distribution centered 407?meV above the GaAs valence band maximum.

  15. Efficiency enhancement of InGaN/GaN solar cells with nanostructures

    SciTech Connect (OSTI)

    Bai, J.; Yang, C. C.; Athanasiou, M.; Wang, T.

    2014-02-03

    We demonstrate InGaN/GaN multi-quantum-well solar cells with nanostructures operating at a wavelength of 520?nm. Nanostructures with a periodic nanorod or nanohole array are fabricated by means of modified nanosphere lithography. Under 1 sun air-mass 1.5 global spectrum illumination, a fill factor of 50 and an open circuit voltage of 1.9?V are achieved in spite of very high indium content in InGaN alloys usually causing degradation of crystal quality. Both the nanorod array and the nanohole array significantly improve the performance of solar cells, while a larger enhancement is observed for the nanohole array, where the conversion efficiency is enhanced by 51%.

  16. Graphene in ohmic contact for both n-GaN and p-GaN

    SciTech Connect (OSTI)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  17. Temperature dependency of the emission properties from positioned In(Ga)As/GaAs quantum dots

    SciTech Connect (OSTI)

    Braun, T.; Schneider, C.; Maier, S.; Forchel, A.; Höfling, S.; Kamp, M.; Igusa, R.; Iwamoto, S.; Arakawa, Y.

    2014-09-15

    In this letter we study the influence of temperature and excitation power on the emission linewidth from site-controlled InGaAs/GaAs quantum dots grown on nanoholes defined by electron beam lithography and wet chemical etching. We identify thermal electron activation as well as direct exciton loss as the dominant intensity quenching channels. Additionally, we carefully analyze the effects of optical and acoustic phonons as well as close-by defects on the emission linewidth by means of temperature and power dependent micro-photoluminescence on single quantum dots with large pitches.

  18. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces

    SciTech Connect (OSTI)

    Kang, M.; Wu, J. H.; Chen, H. Y.; Thornton, K.; Goldman, R. S. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States)] [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Sofferman, D. L. [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States) [Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136 (United States); Department of Physics, Adelphi University, Garden City, New York 11530-0701 (United States); Beskin, I. [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)] [Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040 (United States)

    2013-08-12

    We have examined the origins of ion irradiation-induced nanoparticle (NP) motion. Focused-ion-beam irradiation of GaAs surfaces induces random walks of Ga NPs, which are biased in the direction opposite to that of ion beam scanning. Although the instantaneous NP velocities are constant, the NP drift velocities are dependent on the off-normal irradiation angle, likely due to a difference in surface non-stoichiometry induced by the irradiation angle dependence of the sputtering yield. It is hypothesized that the random walks are initiated by ion irradiation-induced thermal fluctuations, with biasing driven by anisotropic mass transport.

  19. GaN based nanorods for solid state lighting

    SciTech Connect (OSTI)

    Li Shunfeng; Waag, Andreas [Institute of Semiconductor Technology, Braunschweig University of Technology, 38106 Braunschweig (Germany)

    2012-04-01

    In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

  20. Pyrococcus Furiosus Genome Supplementary Data from the Adams Laboratory at the University of Georgia

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Adams, Michael W.W.; Weinberg, Michael V.; Schut, Gerrit J.; Brehm, Scott; Datta, Susmitta; Zhou, J.

    The research in the Adams Laboratory focuses on the physiology of hyperthermophilic organisms with an emphasis on metal-containing enzymes in the hyperthermophilic marine archaeon Pyrococcus furiosus. Three of the many articles from this University of Georgia lab have supplementary materials that are available on the Adams Lab website. All three sets of data are Open Reading Frames (ORFs) used for DNA microarray experiments and the changes in signal intensities. The full citations for the three articles are: 1) Weinberg, M. V., Schut, G. J., Brehm, S., Datta, S. and Adams, M. W. W. (2005) Cold shock of a hyperthermophilic archaeon: Pyrococcus furiosus exhibits multiple responses to a suboptimal growth temperature with a key role for membrane-bound glycoproteins. J Bacteriol. 187, 336-348; 2) Schut, G. J., Brehm, S. D., Datta, S. and Adams, M. W. W. (2003) "Whole genome DNA microarray analysis of a hyperthermophile and an archaeon: Pyrococcus furiosus grown on carbohydrates or peptides" J. Bacteriol. 185, 3935-3947; Schut, G. J., Zhou, J. and Adams, M. W. W. (2001) "DNA microarray analysis of the hyperthermophilic archaeon Pyrococcus furiosus evidence for a new type of sulfur-reducing enzyme" J. Bacteriol. 183, 7027-7036. Note that these articles are copyrighted by the Journal of Bacteriology.

  1. GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a

    E-Print Network [OSTI]

    Atwater, Harry

    GaInP/GaAs dual junction solar cells on Ge/Si epitaxial templates Melissa J. Archer,1,a Daniel C, crack-free GaInP/GaAs double junction solar cells were grown by metal organic chemical vapor deposition with the world record efficiency is a metamorphic triple junction GaInP/GaAs/Ge cell.6 Alternatively, wafer

  2. Enhanced hole transport in InGaN/GaN multiple quantum well light-emitting

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    -emitting diodes (LEDs) are considered the new generation lighting sources due to their advantages in power Society of America OCIS codes: 230.3670, 230.5590, 160.6000. Nitride-based high-power light devoted to the development of high-brightness GaN-based LEDs [3­5]. Lateral hole spreading is one

  3. High-Efficiency GaInP/GaAs Tandem Solar Cells

    SciTech Connect (OSTI)

    Bertness, K. A.; Friedman, D. J.; Kurtz, S. R.; Kibbler, A. E.; Cramer, C.; Olson, J. M.

    1996-09-01

    GaInP/GaAs tandem solar cells have achieved efficiencies between 25.7-30.2%, depending on illumination conditions. The efficiencies are the highest confirmed two-terminal values measured for any solar cell within each standard illumination category. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance.

  4. High-efficiency GaInP/GaAs tandem solar cells

    SciTech Connect (OSTI)

    Bertness, K.A.; Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Kramer, C.; Olson, J.M.

    1994-12-01

    GaInP/GaAs tandem solar cells have achieved new record efficiencies, specifically 25.7% under air-mass 0 (AM0) illumination, 29.5% under AM 1.5 global (AM1.5G) illumination, and 30.2% at 140-180x concentration under AM 1.5 direct (AM1.5D) illumination. These values are the highest two-terminal efficiencies achieved by any solar cell under these illumination conditions. The monolithic, series-connected design of the tandem cells allows them to be substituted for silicon or gallium arsenide cells in photovoltaic panel systems with minimal design changes. The advantages of using GaInP/GaAs tandem solar cells in space and terrestrial applications are discussed primarily in terms of the reduction in balance-of-system costs that accrues when using a higher efficiency cell. The new efficiency values represent a significant improvement over previous efficiencies for this materials system, and we identify grid design, back interface passivation, and top interface passivation as the three key factors leading to this improvement. In producing the high-efficiency cells, we have addressed nondestructive diagnostics and materials growth reproducibility as well as peak cell performance. 31 refs.

  5. TJ Solar Cell (GaInP/GaAs/Ge Ultrahigh-Efficiency Solar Cells

    SciTech Connect (OSTI)

    Friedman, Daniel

    2002-04-17

    This talk will discuss recent developments in III-V multijunction photovoltaic technology which have led to the highest-efficiency solar cells ever demonstrated. The relationship between the materials science of III-V semiconductors and the achievement of record solar cell efficiencies will be emphasized. For instance, epitaxially-grown GAInP has been found to form a spontaneously-ordered GaP/InP (111) superlattice. This ordering affects the band gap of the material, which in turn affects the design of solar cells which incorporate GaInP. For the next generation of ultrahigh-efficiency III-V solar cells, we need a new semiconductor which is lattice-matched to GaAs, has a band gap of 1 eV, and has long minority-carrier diffusion lengths. Out of a number of candidate materials, the recently-discovered alloy GaInNAs appears to have the greatest promise. This material satisfies the first two criteria, but has to date shown very low diffusion lengths, a problem which is our current focus in the development of these next-generation cells.

  6. Multijunction GaInP/GaInAs/Ge solar cells with Bragg reflectors

    SciTech Connect (OSTI)

    Emelyanov, V. M. Kalyuzhniy, N. A.; Mintairov, S. A.; Shvarts, M. Z.; Lantratov, V. M.

    2010-12-15

    Effect of subcell parameters on the efficiency of GaInP/Ga(In)As/Ge tandem solar cells irradiated with 1-MeV electrons at fluences of up to 3 x 10{sup 15} cm{sup -2} has been theoretically studied. The optimal thicknesses of GaInP and GaInAs subcells, which provide the best photocurrent matching at various irradiation doses in solar cells with and without built-in Bragg reflectors, were determined. The dependences of the photoconverter efficiency on the fluence of 1-MeV electrons and on the time of residence in the geostationary orbit were calculated for structures optimized to the beginning and end of their service lives. It is shown that the optimization of the subcell heterostructures for a rated irradiation dose and the introduction of Bragg reflectors into the structure provide a 5% overall increase in efficiency for solar cells operating in the orbit compared with unoptimized cells having no Bragg reflector.

  7. Localized corrosion of GaAs surfaces and formation of porous GaAs

    SciTech Connect (OSTI)

    Schmuki, P.; Vitus, C.M.; Isaacs, H.S.; Fraser, J.; Graham, M.J.

    1995-12-01

    The present work deals with pitting corrosion of p- and n-type GaAs (100). Pit growth can be electrochemically initiated on both conduction types in chloride-containing solutions and leads after extended periods of time to the formation of a porous GaAs structure. In the case of p-type material, localized corrosion is only observed if a passivating film is present on the surface, otherwise -- e.g. in acidic solutions -- the material suffers from a uniform attack (electropolishing) which is independent of the anion present. In contrast, pitting corrosion of n-type material can be triggered independent of the presence of an oxide film. This is explained in terms of the different current limiting factor for the differently doped materials (oxide film in the case of the p- and a space charge layer in the case of the n-GaAs). The porous structure was characterized by SEM, EDX and AES, and consists mainly of GaAs. From scratch experiments it is clear that the pit initiation process is strongly influenced by surface defects. For n-type material, AFM investigations show that light induced roughening of the order of several hundred nm occurs under non-passivating conditions. This nm- scale roughening however does not affect the pitting process.

  8. Demonstration of a semipolar (10(1)over-bar(3)over-bar) InGaN/GaN green light emitting diode

    E-Print Network [OSTI]

    2005-01-01

    InGaN / GaN green light emitting diode R. Sharma, a? P. M.green ??525 nm? light emitting diode ?LED?. The fabricated

  9. Inverse spin Hall effect in Pt/(Ga,Mn)As

    SciTech Connect (OSTI)

    Nakayama, H.; Chen, L.; Chang, H. W.; Ohno, H.; Matsukura, F.

    2015-06-01

    We investigate dc voltages under ferromagnetic resonance in a Pt/(Ga,Mn)As bilayer structure. A part of the observed dc voltage is shown to originate from the inverse spin Hall effect. The sign of the inverse spin Hall voltage is the same as that in Py/Pt bilayer structure, even though the stacking order of ferromagnetic and nonmagnetic layers is opposite to each other. The spin mixing conductance at the Pt/(Ga,Mn)As interface is determined to be of the order of 10{sup 19?}m{sup ?2}, which is about ten times greater than that of (Ga,Mn)As/p-GaAs.

  10. Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

    SciTech Connect (OSTI)

    Mooney, P. M.; Watkins, K. P.; Jiang, Zenan; Basile, A. F.; Lewis, R. B.; Bahrami-Yekta, V.; Masnadi-Shirazi, M.; Beaton, D. A.; Tiedje, T.

    2013-04-07

    Deep level defects in n-type GaAs{sub 1-x}Bi{sub x} having 0 < x < 0.012 and GaAs grown by molecular beam epitaxy (MBE) at substrate temperatures between 300 and 400 Degree-Sign C have been investigated by Deep Level Capacitance Spectroscopy. Incorporating Bi suppresses the formation of an electron trap with activation energy 0.40 eV, thus reducing the total trap concentration in dilute GaAsBi layers by more than a factor of 20 compared to GaAs grown under the same conditions. We find that the dominant traps in dilute GaAsBi layers are defect complexes involving As{sub Ga}, as expected for MBE growth at these temperatures.

  11. High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells

    SciTech Connect (OSTI)

    Chang, Chiao-Yun; Li, Hen; Lu, Tien-Chang, E-mail: timtclu@mail.nctu.edu.tw [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan 300 (China)

    2014-03-03

    In this study, we demonstrated high efficiency InGaN/GaN light emitting diodes (LEDs) with asymmetric triangular multiple quantum wells (MQWs). Asymmetric triangular MQWs not only contribute to uniform carrier distribution in InGaN/GaN MQWs but also yield a low Auger recombination rate. In addition, asymmetric triangular MQWs with gallium face-oriented inclination band profiles can be immune from the polarization charge originating from typical c-plane InGaN/GaN quantum well structures. In the experiment, LEDs incorporated with asymmetric triangular MQWs with gallium face-oriented inclination band profiles exhibited a 60.0% external quantum efficiency at 20?mA and a 27.0% efficiency droop at 100?mA (corresponding to a current density of 69?A/cm{sup 2}), which accounted for an 11.7% efficiency improvement and a 31.1% droop reduction compared with symmetric square quantum well structure LEDs.

  12. Deep level centers and their role in photoconductivity transients of InGaAs/GaAs quantum dot chains

    SciTech Connect (OSTI)

    Kondratenko, S. V. Vakulenko, O. V.; Mazur, Yu. I. Dorogan, V. G.; Marega, E.; Benamara, M.; Ware, M. E.; Salamo, G. J.

    2014-11-21

    The in-plane photoconductivity and photoluminescence are investigated in quantum dot-chain InGaAs/GaAs heterostructures. Different photoconductivity transients resulting from spectrally selecting photoexcitation of InGaAs QDs, GaAs spacers, or EL2 centers were observed. Persistent photoconductivity was observed at 80?K after excitation of electron-hole pairs due to interband transitions in both the InGaAs QDs and the GaAs matrix. Giant optically induced quenching of in-plane conductivity driven by recharging of EL2 centers is observed in the spectral range from 0.83?eV to 1.0?eV. Conductivity loss under photoexcitation is discussed in terms of carrier localization by analogy with carrier distribution in disordered media.

  13. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect (OSTI)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin; Centre for Microscopy and Microanalysis, The University of Queensland, St. Lucia, Queensland 4072

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  14. Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A S P E A K E R B I O G R A P H I E S

    E-Print Network [OSTI]

    Das, Suman

    Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 A G E N D A · S P Next Generation Manufacturing of Printed and Flexible Electronics #12;#12;Georgia Tech Manufacturing Institute | Printed and Flexible Electronics | Page 1 Table of Contents Agenda - Pages 3-4 Speaker

  15. An inverted AlGaAs/GaAs patterned-Ge tunnel junction cascade concentrator solar cell

    SciTech Connect (OSTI)

    Venkatasubramanian, R. )

    1993-01-01

    This report describes work to develop inverted-grown Al[sub 0.34]Ga[sub 0.66]As/GaAs cascades. Several significant developments are reported on as follows: (1) The AM1.5 1-sun total-area efficiency of the top Al[sub 0.34]Ga[sub 0.66]As cell for the cascade was improved from 11.3% to 13.2% (NREL measurement [total-area]). (2) The cycled'' organometallic vapor phase epitaxy growth (OMVPE) was studied in detail utilizing a combination of characterization techniques including Hall-data, photoluminescence, and secondary ion mass spectroscopy. (3) A technique called eutectic-metal-bonding (EMB) was developed by strain-free mounting of thin GaAs-AlGaAs films (based on lattice-matched growth on Ge substrates and selective plasma etching of Ge substrates) onto Si carrier substrates. Minority-carrier lifetime in an EMB GaAs double-heterostructure was measured as high as 103 nsec, the highest lifetime report for a freestanding GaAs thin film. (4) A thin-film, inverted-grown GaAs cell with a 1-sun AM1.5 active-area efficiency of 20.3% was obtained. This cell was eutectic-metal-bonded onto Si. (5) A thin-film inverted-grown, Al[sub 0.34]Ga[sub 0.66]As/GaAs cascade with AM1.5 efficiency of 19.9% and 21% at 1-sun and 7-suns, respectively, was obtained. This represents an important milestone in the development of an AlGaAs/GaAs cascade by OMVPE utilizing a tunnel interconnect and demonstrates a proof-of-concept for the inverted-growth approach.

  16. DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

    SciTech Connect (OSTI)

    Li, N.Y.; Chang, P.C.; Baca, A.G.; Xie, X.M.; Sharps, P.R.; Hou, H.Q.

    2000-01-04

    The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

  17. The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs

    E-Print Network [OSTI]

    sound velocity in GaN. The cut off wave vector is given by where NA is the Avogadro number, is the mass

  18. Reliability of AlGaN/GaN high electron mobility transistors on low dislocation density bulk GaN substrate: Implications of surface step edges

    SciTech Connect (OSTI)

    Killat, N., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk; Montes Bajo, M.; Kuball, M., E-mail: Nicole.Killat@bristol.ac.uk, E-mail: Martin.Kuball@bristol.ac.uk [Center for Device Thermography and Reliability (CDTR), H.H. Wills Physics Laboratory, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Paskova, T. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Materials Science and Engineering Department, North Carolina State University, Raleigh, North Carolina 27695 (United States); Evans, K. R. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States)] [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Leach, J. [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States) [Kyma Technologies, Inc., Raleigh, North Carolina 27617 (United States); Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Li, X.; Özgür, Ü.; Morkoç, H. [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)] [Electrical and Computer Engineering Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States); Chabak, K. D.; Crespo, A.; Gillespie, J. K.; Fitch, R.; Kossler, M.; Walker, D. E.; Trejo, M.; Via, G. D.; Blevins, J. D. [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)] [Air Force Research Laboratory, Wright-Patterson Air Force Base, Dayton, Ohio 45433 (United States)

    2013-11-04

    To enable gaining insight into degradation mechanisms of AlGaN/GaN high electron mobility transistors, devices grown on a low-dislocation-density bulk-GaN substrate were studied. Gate leakage current and electroluminescence (EL) monitoring revealed a progressive appearance of EL spots during off-state stress which signify the generation of gate current leakage paths. Atomic force microscopy evidenced the formation of semiconductor surface pits at the failure location, which corresponds to the interaction region of the gate contact edge and the edges of surface steps.

  19. Structural Model of the Basement in the Central Savannah River Area, South Carolina and Georgia

    SciTech Connect (OSTI)

    Stephenson, D. [Westinghouse Savannah River Company, AIKEN, SC (United States); Stieve, A.

    1992-03-01

    Interpretation of several generations of seismic reflection data and potential field data suggests the presence of several crustal blocks within the basement beneath the Coastal Plain in the Central Savannah River Area (CSRA). The seismic reflection and refraction data include a grid of profiles that capture shallow and deep reflection events and traverse the Savannah River Site and vicinity. Potential field data includes aeromagnetic, ground magnetic surveys, reconnaissance and detailed gravity surveys. Subsurface data from recovered core are used to constrain the model.Interpretation of these data characteristically indicate a southeast dipping basement surface with some minor highs and lows suggesting an erosional pre-Cretaceous unconformity. This surface is interrupted by several basement faults, most of which offset only early Cretaceous sedimentary horizons overlying the erosional surface. The oldest fault is perhaps late Paleozoic because it is truncated at the basement/Coastal Plain interface. This fault is related in timing and mechanism to the underlying Augusta fault. The youngest faults deform Coastal Plain sediments of at least Priabonian age (40-36.6 Ma). One of these young faults is the Pen Branch faults, identified as the southeast dipping master fault for the Triassic Dunbarton basin. All the Cenozoic faults are probably related in time and mechanism to the nearby, well studied Belair fault.The study area thus contains a set of structures evolved from the Alleghanian orogeny through Mesozoic extension to Cenozoic readjustment of the crust. There is a metamorphosed crystalline terrane with several reflector/fault packages, a reactivated Triassic basin, a mafic terrane separating the Dunbarton basin from the large South Georgia basin to the southeast, and an overprint of reverse faults, some reactivated, and some newly formed.

  20. Economic Benefits, Carbon Dioxide (CO2) Emissions Reduction, and Water Conservation Benefits from 1,000 Megawatts (MW) of New Wind Power in Georgia (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2008-06-01

    The U.S. Department of Energy's Wind Powering America Program is committed to educating state-level policy makers and other stakeholders about the economic, CO2 emissions, and water conservation impacts of wind power. This analysis highlights the expected impacts of 1000 MW of wind power in Georgia. We forecast the cumulative economic benefits from 1000 MW of development in Georgia to be $2.1 billion, annual CO2 reductions are estimated at 3.0 million tons, and annual water savings are 1,628 million gallons.

  1. Istanbul,Turkey & Atlanta, GA Istanbul,Turkey

    E-Print Network [OSTI]

    Frantz, Kyle J.

    Istanbul,Turkey & Atlanta, GA Istanbul,Turkey & Atlanta, GA 2012 Media, Journalism and Business for departure to Istanbul,Turkey Day 9 Depart for Istanbul; guided cultural visit upon arrival; group dinner Day business leaders; site visits to local universities Day 18 UPS and the value of logistics inTurkey Day 19

  2. Photoeffects in WO{sub 3}/GaAs electrode

    SciTech Connect (OSTI)

    Yoon, K.H.; Lee, J.W.; Cho, Y.S.; Kang, D.H.

    1996-12-01

    Photoeffects of a {ital p}-type GaAs coated with WO{sub 3} thin film have been investigated as a function of film thickness and photoresponse transients of the WO{sub 3}/GaAs electrode were studied. Also, these results were compared to those for a single {ital p}-type GaAs electrode. The photocurrent of the WO{sub 3}/GaAs electrode depended on the film thickness of the WO{sub 3}, showing an optimum photon efficiency for specimens of 800 A thickness. This is due to the existence of an effective interface state within the band gap which reduces trapping of carriers and facilitates carrier movement. For an 800-A-thick WO{sub 3} thin film deposited {ital p}-GaAs photoelectrode, the photogenerated electrons were found to move to an electrolyte at a higher positive onset potential compared with that of single {ital p}-type GaAs, which was confirmed as a result of transient behavior. {ital I}{endash}{ital V} and {ital C}{endash}{ital V} characteristics of the WO{sub 3}/GaAs electrode were also compared with those of a single {ital p}-type GaAs electrode. {copyright} {ital 1996 American Institute of Physics.}

  3. Room temperature spin transport in undoped (110) GaAs/AlGaAs quantum wells

    SciTech Connect (OSTI)

    Yokota, Nobuhide Aoshima, Yohei; Ikeda, Kazuhiro; Kawaguchi, Hitoshi

    2014-02-17

    We are reporting on our first observation of a micrometer-order electron spin transport in a (110) GaAs/AlGaAs multiple quantum well (QW) at room temperature using a space- and time-resolved Kerr rotation technique. A 37-?m transport was observed within an electron spin lifetime of 1.2?ns at room temperature when using an in-plane electric field of 1.75?kV/cm. The spatio-temporal profiles of electron spins were well reproduced by the spin drift-diffusion equations coupled with the Poisson equation, supporting the validity of the measurement. The results suggest that (110) QWs are useful as a spin transport layer for semiconductor spintronic devices operating at room temperature.

  4. Evaluation of the two-photon absorption characteristics of GaSb/GaAs quantum rings

    SciTech Connect (OSTI)

    Wagener, M. C.; Botha, J. R.; Carrington, P. J.; Krier, A.

    2014-07-28

    The optical parameters describing the sub-bandgap response of GaSb/GaAs quantum rings solar cells have been obtained from photocurrent measurements using a modulated pseudo-monochromatic light source in combination with a second, continuous photo-filling source. By controlling the charge state of the quantum rings, the photoemission cross-sections describing the two-photon sub-bandgap transitions could be determined independently. Temperature dependent photo-response measurements also revealed that the barrier for thermal hole emission from the quantum rings is significantly below the quantum ring localisation energy. The temperature dependence of the sub-bandgap photo-response of the solar cell is also described in terms of the photo- and thermal-emission characteristics of the quantum rings.

  5. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes

    SciTech Connect (OSTI)

    Choi, Won Hyuck; Abraham, Michael; Yu, Shih-Ying [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); You, Guanjun; Liu, Jie; Wang, Li; Xu, Jian, E-mail: jianxu@engr.psu.edu [Department of Engineering Science and Mechanics, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Mohney, Suzanne E., E-mail: mohney@ems.psu.edu [Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2014-07-07

    We studied the effect of sidewall passivation on InGaN/GaN multiquantum well-based nanopillar light emitting diode (LED) performance. In this research, the effects of varying etch rate, KOH treatment, and sulfur passivation were studied for reducing nanopillar sidewall damage and improving device efficiency. Nanopillars prepared under optimal etching conditions showed higher photoluminescence intensity compared with starting planar epilayers. Furthermore, nanopillar LEDs with and without sulfur passivation were compared through electrical and optical characterization. Suppressed leakage current under reverse bias and four times higher electroluminescence (EL) intensity were observed for passivated nanopillar LEDs compared with unpassivated nanopillar LEDs. The suppressed leakage current and EL intensity enhancement reflect the reduction of non-radiative recombination at the nanopillar sidewalls. In addition, the effect of sulfur passivation was found to be very stable, and further insight into its mechanism was gained through transmission electron microscopy.

  6. Large linear magnetoresistance in a GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Aamir, Mohammed Ali, E-mail: aamir@physics.iisc.ernet.in; Goswami, Srijit, E-mail: aamir@physics.iisc.ernet.in; Ghosh, Arindam [Department of Physics, Indian Institute of Science, Bangalore 560 012 (India); Baenninger, Matthias; Farrer, Ian; Ritchie, David A. [Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tripathi, Vikram [Department of Theoretical Physics, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India); Pepper, Michael [Department of Electrical and Electronic Engineering, University College, London WC1E 7JE (United Kingdom)

    2013-12-04

    We report non-saturating linear magnetoresistance (MR) in a two-dimensional electron system (2DES) at a GaAs/AlGaAs heterointerface in the strongly insulating regime. We achieve this by driving the gate voltage below the pinch-off point of the device and operating it in the non-equilibrium regime with high source-drain bias. Remarkably, the magnitude of MR is as large as 500% per Tesla with respect to resistance at zero magnetic field, thus dwarfing most non-magnetic materials which exhibit this linearity. Its primary advantage over most other materials is that both linearity and the enormous magnitude are retained over a broad temperature range (0.3 K to 10 K), thus making it an attractive candidate for cryogenic sensor applications.

  7. Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kuykendall, Tevye; Aloni, Shaul; Jen-La Plante, Ilan; Mokari, Taleb

    2009-01-01

    We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).

  8. Elastic properties of Pu metal and Pu-Ga alloys

    SciTech Connect (OSTI)

    Soderlind, P; Landa, A; Klepeis, J E; Suzuki, Y; Migliori, A

    2010-01-05

    We present elastic properties, theoretical and experimental, of Pu metal and Pu-Ga ({delta}) alloys together with ab initio equilibrium equation-of-state for these systems. For the theoretical treatment we employ density-functional theory in conjunction with spin-orbit coupling and orbital polarization for the metal and coherent-potential approximation for the alloys. Pu and Pu-Ga alloys are also investigated experimentally using resonant ultrasound spectroscopy. We show that orbital correlations become more important proceeding from {alpha} {yields} {beta} {yields} {gamma} plutonium, thus suggesting increasing f-electron correlation (localization). For the {delta}-Pu-Ga alloys we find a softening with larger Ga content, i.e., atomic volume, bulk modulus, and elastic constants, suggest a weakened chemical bonding with addition of Ga. Our measurements confirm qualitatively the theory but uncertainties remain when comparing the model with experiments.

  9. Transport properties of InGaAs/GaAs Heterostructures with {delta}-doped quantum wells

    SciTech Connect (OSTI)

    Baidus, N. V.; Vainberg, V. V.; Zvonkov, B. N.; Pylypchuk, A. S. Poroshin, V. N.; Sarbey, O. G.

    2012-05-15

    The lateral transport of electrons in single- and double-well pseudomorphic GaAs/n-InGaAs/GaAs heterostructures with quantum wells 50-100 meV deep and impurity {delta}-layers in the wells, with concentrations in the range 10{sup 11} < N{sub s} < 10{sup 12} cm{sup -2}, has been investigated. Single-well structures with a doped well at the center exhibit a nonmonotonic temperature dependence of the Hall coefficient and an increase in low-temperature electron mobility with an increase in the impurity concentration. The results obtained indicate that the impurity-band electron states play an important role in the conductivity of these structures. Involvement of the impurity band also allows to explain adequately the characteristics of the conductivity of double-well structures; in contrast to single-well structures, band bending caused by asymmetric doping is of great importance. The numerical calculations of conductivity within the model under consideration confirm these suggestions.

  10. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  11. InGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    ) In conventional InGaN/GaN light-emitting diodes (LEDs), thin InGaN quantum wells are usually adopted to mitigate recombination scales with the third power of the carrier density. As a result, the efficiency droop of the Auger recombination severely limits the LED performance. Here, we proposed and showed wide InGaN quantum wells

  12. Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns

    E-Print Network [OSTI]

    Jahns, Jürgen

    Current crowding in GaInN / GaN LEDs grown on insulating substrates X. Guo, E. F. Schubert and J. Jahns Current crowding in mesa-structure GaInN/GaN light-emitting diodes (LEDs) grown on insulating and a saturation of the optical output power at high injection currents. It is shown that the optical power

  13. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors

    E-Print Network [OSTI]

    Florida, University of

    , creating both electron traps and increasing electron tunneling through the defect states [4Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron 2011 a b s t r a c t AlGaN/GaN High Electron Mobility Transistors were found to exhibit a negative

  14. Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii, R. Deblock, B. Reulet, and H. Bouchiat

    E-Print Network [OSTI]

    Shepelyansky, Dima

    Mesoscopic photovoltaic effect in GaAs/Ga1-xAlxAs Aharonov-Bohm rings L. Angers, A. Chepelianskii specific dc voltage. We have investigated this photovoltaic PV effect on GaAs/Ga1-xAlxAs Aharonov is generally done by measuring the dc induced signal sometimes called photovoltaic effect which has also given

  15. Determination of two-dimensional electron and hole gas carriers in AlGaN/GaN/AlN heterostructures grown by Metal

    E-Print Network [OSTI]

    Ozbay, Ekmel

    between GaN and a sapphire substrate, the dislocation scattering mechanism and the electron spillover

  16. Atomistic description of the electronic structure of InxGa1xAs alloys and InAsGaAs superlattices

    E-Print Network [OSTI]

    Kent, Paul

    quantum-wells15,20 (InxGa1 xAs)n /InP on InP and (InxGa1 xAs)n /GaAs on GaAs, and v GaAs-embedded InAs quantum dots.21­23 We wish to provide a uniform the- oretical description of the electronic structure-period dependence of the band offsets and interband transitions of InAs/GaAs systems on InP and GaAs substrates. DOI

  17. Improved hole distribution in InGaN/GaN light-emitting diodes with graded thickness quantum barriers

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    is 48.3%. Moreover, the light output power was enhanced from 770 mW for the ETQB LEDs to 870 m; accepted 3 June 2013; published online 19 June 2013) InGaN/GaN light-emitting diodes (LEDs) with graded , which is much smaller than that of the conventional equal-thickness quantum barriers (ETQB) LED, which

  18. Low-frequency noise in GaNAlGaN heterostructure field-effect transistors at cryogenic temperatures

    E-Print Network [OSTI]

    Pala, Nezih

    that the 1/f noise in GaN/AlGaN HFETs might be caused by electron tunneling from the channel to the traps was practically independent of the frequency of analysis. The model linking this maximum to the electron tunneling Department of Electrical, Computer, and Systems Engineering and Center for Integrated Electronics

  19. Development of GaAs/Si and GaAs/Si monolithic structures for future space solar cells

    SciTech Connect (OSTI)

    Spitzer, M.B.; Vernon, S.M.; Wolfson, R.G.; Tobin, S.P.

    1984-01-01

    The results of heteroepitaxial growth of GaAs and GaAlAs directly on Si are presented, and applications to new cell structures are suggested. The novel feature is the elimination of a Ge lattice transition region. This feature not only reduces the cost of substrate preparation, but also makes possible the fabrication of high efficiency monolithic cascade structures. All films to be discussed were grown by organometallic chemical vapor deposition at atmospheric pressure. This process yielded reproducible, large-area films of GaAs, grown directly on Si, that are tightly adherent and smooth, and are characterized by a defect density of 5 x 10(6) power/sq cm. Preliminary studies indicate that GaAlAs can also be grown in this way. A number of promising applications are suggested. Certainly these substrates are ideal for low-weight GaAs space solar ells. For very high efficiency, the absence of Ge makes the technology attractive for GaAlAs/Si monolithic cascades, in which the Si substrates would first be provided with a suitable p/n junction. An evaluation of a three bandgap cascade consisting of appropriately designed GaAlAs/GaAs/Si layers is also presented.

  20. Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

    E-Print Network [OSTI]

    Wetzel, Christian M.

    Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes S. L. Rumyantseva well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase

  1. GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

    E-Print Network [OSTI]

    be well suited for exploitation of long wavelength quantum dot and dilute nitride technology, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser. Introduction: Lasers based on the GaAs materials system offer advan- tages over their InP counterparts, such as the use

  2. Improved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering by nanoparticles

    E-Print Network [OSTI]

    Yu, Edward T.

    of QDs in the context of our work is attractive for achieving long wavelength absorption in solar cells enhancement at all infrared wave- lengths in the device photocurrent spectrum. Epitaxial layer structuresImproved performance of In,,Ga...As/GaAs quantum dot solar cells via light scattering

  3. Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated Antenna Approach

    E-Print Network [OSTI]

    Itoh, Tatsuo

    Output Harmonic Termination Techniques for AlGaN/GaN HEMT Power Amplifiers Using Active Integrated 1200, Los Angeles, CA 90045 Abstract -- In this paper, effects of output harmonic terminations on PAE termination, we observe a substantial increase in PAE and output power. Further, we demonstrate the high

  4. SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

    E-Print Network [OSTI]

    Florida, University of

    for spacecraft and other long-term sensing applications. However, hydrogen is a dangerous gas for storage for monitoring leakage of hydrogen storage equipment and fuel tanks for spacecraft and hydrogen fuel cellSnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

  5. Mn-doped Ga(As,P) and (Al,Ga)As ferromagnetic semiconductors: Electronic structure calculations 

    E-Print Network [OSTI]

    Masek, J.; Kudrnovsky, J.; Maca, F.; Sinova, Jairo; MacDonald, A. H.; Campion, R. P.; Gallagher, B. L.; Jungwirth, T.

    2007-01-01

    A remarkable progress towards functional ferromagnetic semiconductor materials for spintronics has been achieved in p-type (Ga,Mn)As. Robust hole-mediated ferromagnetism has, however, been observed also in other III-V hosts such as antimonides, Ga...

  6. DESIGN, GROWTH, FABRICATION AND CHARACTERIZATION OF HIGH-BAND GAP InGaN/GaN SOLAR CELLS

    E-Print Network [OSTI]

    Honsberg, Christiana

    photovoltaic efficiency of 39% at 236 suns is achieved by a triple-junction GaInP- GaInAs-Ge tandem solar cell [1]. While the achievable efficiency of triple-junction tandem solar cells is restricted to about 40% [2], modeling results show that a tandem solar cell of five junctions or greater, or an equivalent

  7. The effect of global warming scenarios on soybean and peanut yields in the Coastal Plain region of Georgia

    SciTech Connect (OSTI)

    Laitta, M.T.; Huebner, N.J. [Georgia State Univ., Atlanta, GA (United States)

    1996-09-01

    This study is an evaluation of peanut and soybean yield in the Coastal Plain of Georgia as a function of seasonal water deficit scenarios. An analytical model of the Thornthwaite water balance model, based on historical temperature and precipitation data, is used to evaluate the probable response of crop productivity to climate changes in selected counties in South Georgia. The input of temperature and precipitation values for each site is based on the results of three general circulation models (GCM), which were regionally tailored to the Southeastern United States. A regression analysis was preformed to establish a numerical relationship between historical yield and moisture deficits. This model, in association with projected GCM model deficits, was used to predict future crop yields. Our results showed that given all GCM models evaluated, deficit periods for the selected sites will increase both the intensity and duration droughts in the southeastern U.S. Of the two crops analyzed, it was found that soybeans showed a higher sensitivity to moisture deficits than did peanuts.

  8. Progress toward technology transition of GaInP{sub 2}/GaAs/Ge multijunction solar cells

    SciTech Connect (OSTI)

    Keener, D.N.; Marvin, D.C.; Brinker, D.J.; Curtis, H.B.; Price, P.M.

    1997-12-31

    The objective of the joint WL/PL/NASA Multijunction Solar Cell Manufacturing Technology (ManTech) Program is to scale up high efficiency GaInP{sub 2}/GaAs/Ge multijunction solar cells to production size, quantity, and yield while limiting the production cost/Watt ($/W) to 15% over GaAs cells. Progress made by the program contractors, Spectrolab and TECSTAR, include, respectively, best cell efficiencies of 25.76% and 24.7% and establishment of 24.2% and 23.8% lot average efficiency baseline designs. The paper also presents side-by-side testing results collected by Phillips Laboratory and NASA Lewis on Phase 1 deliverable cells, which shows compliance with program objectives. Cell performance, pre- and post-radiation, and temperature coefficient results on initial production GaInP{sub 2}/GaAs/Ge solar cells will be presented.

  9. Modeling Soil Quality Thresholds to Ecosystem Recovery at Fort Benning, Georgia, USA

    SciTech Connect (OSTI)

    Garten Jr., C.T.

    2004-03-08

    The objective of this research was to use a simple model of soil C and N dynamics to predict nutrient thresholds to ecosystem recovery on degraded soils at Fort Benning, Georgia, in the southeastern USA. The model calculates aboveground and belowground biomass, soil C inputs and dynamics, soil N stocks and availability, and plant N requirements. A threshold is crossed when predicted soil N supplies fall short of predicted N required to sustain biomass accrual at a specified recovery rate. Four factors were important to development of thresholds to recovery: (1) initial amounts of aboveground biomass, (2) initial soil C stocks (i.e., soil quality), (3) relative recovery rates of biomass, and (4) soil sand content. Thresholds to ecosystem recovery predicted by the model should not be interpreted independent of a specified recovery rate. Initial soil C stocks influenced the predicted patterns of recovery by both old field and forest ecosystems. Forests and old fields on soils with varying sand content had different predicted thresholds to recovery. Soil C stocks at barren sites on Fort Benning generally lie below predicted thresholds to 100% recovery of desired future ecosystem conditions defined on the basis of aboveground biomass (18000 versus 360 g m{sup -2} for forests and old fields, respectively). Calculations with the model indicated that reestablishment of vegetation on barren sites to a level below the desired future condition is possible at recovery rates used in the model, but the time to 100% recovery of desired future conditions, without crossing a nutrient threshold, is prolonged by a reduced rate of forest growth. Predicted thresholds to ecosystem recovery were less on soils with more than 70% sand content. The lower thresholds for old field and forest recovery on more sandy soils are apparently due to higher relative rates of net soil N mineralization in more sandy soils. Calculations with the model indicate that a combination of desired future conditions, initial levels of soil quality (defined by soil C stocks), and the rate of biomass accumulation determines the predicted success of ecosystem recovery on disturbed soils.

  10. PCARD HIGH RISK VENDOR PURCHASE AUTHORIZATION FORM (NOTE: GEORGIA TECH DOES NOT ENCOURAGE THE USE OF HIGH RISK VENDORS SUCH AS PAYPAL. IF NO OTHER

    E-Print Network [OSTI]

    PCARD HIGH RISK VENDOR PURCHASE AUTHORIZATION FORM (NOTE: GEORGIA TECH DOES NOT ENCOURAGE THE USE OF HIGH RISK VENDORS SUCH AS PAYPAL. IF NO OTHER FORM OF PAYMENT IS ACCEPTED BY THE VENDOR.2.1.8 HIGH RISK VENDOR LIST (FORM MUST BE USED FOR THE FOLLOWING VENDORS): 1. PAYPAL VIEW EXAMPLES

  11. 1999 IEEE/ASME International Conference on Advanced Intelligent Mechatronics (AIM'99) . Atlanta, Georgia . Sept. 1922, 1999 MULTISENSOR INDUSTRIAL INSPECTION AND GRADING USING ELSA

    E-Print Network [OSTI]

    Naish, Michael D.

    Elizabeth A. Croft Computer Integrated Manufacturing Laboratory Industrial Automation Laboratory Dept for the design and implementation of mul­ tisensor systems for industrial automation; it is particu­ larly suited, Georgia . Sept. 19­22, 1999 MULTISENSOR INDUSTRIAL INSPECTION AND GRADING USING ELSA Michael D. Naish

  12. Proceedings of the Sixteenth Annual Conference of the Cognitive Science Society, 1994. Atlanta, Georgia, August 13-16, 876-881.

    E-Print Network [OSTI]

    Thórisson, Kristinn Rúnar

    , Georgia, August 13-16, 876-881. Simulated Perceptual Grouping: An Application to Human-Computer are explained. Keywords: Perceptual grouping, gestalt perception, multi-modal, simulation, human-computer. This paper describes a general computational model of perceptual grouping and discusses its use in human-computer

  13. Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 Radar-based Retrievals of Cloud Properties in the Arctic

    E-Print Network [OSTI]

    Shupe, Matthew

    Eleventh ARM Science Team Meeting Proceedings, Atlanta, Georgia, March 19-23, 2001 1 Radar Radiation Measurement (ARM) program Cloud and Radiation Testbed (CART) sites, all techniques discussed here can be applied to measurements taken at the different ARM sites. Briefly summarized here

  14. Ferromagnetism in undoped One-dimensional GaN Nanowires

    SciTech Connect (OSTI)

    Jeganathan, K. E-mail: jagan@physics.bdu.ac.in; Purushothaman, V.; Debnath, R.; Arumugam, S.

    2014-05-15

    We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ?0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10{sup ?8} mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.

  15. Characterization of Zns-GaP Naon-composites

    SciTech Connect (OSTI)

    Todd, V.

    1993-12-09

    It proved possible to produce consistent, high-quality nanocrystalline ZnS powders with grain sizes as small as 8 nm. These powders are nano-porous and are readily impregnated with GaP precursor, although inconsistently. Both crystal structure and small grain size of the ZnS can be maintained through the use of GaP. Heat treatment of the impregnated powders results in a ZnS-GaP composite structure where the grain sizes of the phases are on the order of 10--20 nm. Conventional powder processing should be able to produce optically dense ceramic compacts with improved mechanical properties and suitable IR transmission.

  16. Indium distribution at the interfaces of (Ga,In)(N,As)/GaAs quantum wells

    SciTech Connect (OSTI)

    Luna, E.; Ishikawa, F.; Batista, P. D.; Trampert, A. [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117, Berlin (Germany)

    2008-04-07

    The indium distribution across (Ga,In)(N,As) quantum wells is determined by using transmission electron microscopy techniques. Inside the quantum well, the indium distribution is well described by Muraki's segregation model; however, it fails in reflecting the concentration at the interfaces. To describe them, we propose a sigmoidal law which defines the smooth variation of the indium concentration with the position and provides a systematic and quantitative characterization of the interfaces. The thermal stability of the interfaces and their interplay with segregation effects are discussed. A connection between the high thermal robustness of the interfaces and the inherent thermodynamic miscibility gap of the alloy is suggested.

  17. Local Structures and Interface Morphology of InGaAsN Thin Films Grown on GaAs

    SciTech Connect (OSTI)

    Allerman, A.A.; Chen, J.G.; Geisz, J.F.; Huang, S.; Hulbert, S.L.; Jones, E.D.; Kao, Y.H.; Kurtz, S.; Kurtz, S.R.; Olson, J.M.; Soo, Y.L.

    1999-02-23

    The compound semiconductor system InGaAsN exhibits many intriguing properties which are particularly useful for the development of innovative high efficiency thin film solar cells and long wavelength lasers. The bandgap in these semiconductors can be varied by controlling the content of N and In and the thin films can yet be lattice-matched to GaAs. In the present work, x-ray absorption fine structure (XAFS) and grazing incidence x-ray scattering (GIXS) techniques have been employed to probe the local environment surrounding both N and In atoms as well as the interface morphology of InGaAsN thin films epitaxially grown on GaAs. The soft x-ray XAFS results around nitrogen K-edge reveal that N is in the sp{sup 3} hybridized bonding configuration in InGaAsN and GaAsN, suggesting that N impurities most likely substitute for As sites in these two compounds. The results of In K-edge XAFS suggest a possible trend of a slightly larger coordination number of As nearest neighbors around In atoms in InGaAsN samples with a narrower bandgap whereas the In-As interatomic distance remains practically the same as in InAs within the experimental uncertainties. These results combined suggest that N-substitution of the As sites plays an important role of bandgap-narrowing while in the meantime counteracting the compressive strain caused by In-doping. Grazing incidence x-ray scattering (GIXS) experiments verify that InGaAsN thin films can indeed form very smooth interfaces with GaAs yielding an average interfacial roughness of 5-20{angstrom}.

  18. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  19. Electrical spin injection using GaCrN in a GaN based spin light emitting diode

    SciTech Connect (OSTI)

    Banerjee, D.; Ganguly, S.; Saha, D.; Adari, R.; Sankaranarayan, S.; Kumar, A.; Aldhaheri, R. W.; Hussain, M. A.; Balamesh, A. S.

    2013-12-09

    We have demonstrated electrical spin-injection from GaCrN dilute magnetic semiconductor (DMS) in a GaN-based spin light emitting diode (spin-LED). The remanent in-plane magnetization of the thin-film semiconducting ferromagnet has been used for introducing the spin polarized electrons into the non-magnetic InGaN quantum well. The output circular polarization obtained from the spin-LED closely follows the normalized in-plane magnetization curve of the DMS. A saturation circular polarization of ?2.5% is obtained at 200?K.

  20. Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field

    SciTech Connect (OSTI)

    Guo, Lei; Yang, Xuelin Cheng, Jianpeng; Sang, Ling; Xu, Fujun; Tang, Ning; Feng, Zhihong; Lv, Yuanjie; Wang, Xinqiang; Shen, B.; Ge, Weikun

    2014-12-15

    We have investigated the variation of electron velocity in AlGaN/GaN heterostructures depending on illuminating light intensity and wavelength. It is shown that the electron velocity at high electric field increases under above-band light illumination. This electron velocity enhancement is found to be related to the photo-generated cold holes which interact with hot electrons and thus accelerate the energy relaxation at high electric field. The results suggest an alternative way to improve the electron energy relaxation rate and hence the electron velocity in GaN based heterostructures.

  1. High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

    SciTech Connect (OSTI)

    Wang, Huolei; Yu, Hongyan; Zhou, Xuliang; Kan, Qiang; Yuan, Lijun; Wang, Wei; Pan, Jiaoqing, E-mail: jqpan@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083 (China); Chen, Weixi [State Key Lab for Mesoscopic Physics and School of Physics, Peking University, Beijing 100871 (China); Ding, Ying, E-mail: Ying.Ding@glasgow.ac.uk [School of Engineering, University of Glasgow, Glasgow G12 8LT (United Kingdom)

    2014-10-06

    We report the demonstration of an InGaAs/GaAs quantum well (QW) broadband stimulated emission laser with a structure that integrated a GaAs tunnel junction with two QW active regions. The laser exhibits ultrabroad lasing spectral coverage of ?51?nm at a center wavelength of 1060?nm with a total emission power of 790 mW, corresponding to a high average spectral power density of 15.5 mW/nm, under pulsed current conditions. Compared to traditional lasers, this laser with an asymmetric separate-confinement heterostructure shows broader lasing bandwidth and higher spectral power density.

  2. Linear and nonlinear optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell spherical quantum dot

    SciTech Connect (OSTI)

    Emre Kavruk, Ahmet E-mail: aekavruk@gmail.com; Koc, Fatih; Sahin, Mehmet E-mail: mehsahin@gmail.com

    2013-11-14

    In this work, the optical properties of GaAs/Al{sub x}Ga{sub 1?x}As/GaAs/Al{sub y}Ga{sub 1?y}As multi-shell quantum dot heterostructure have been studied as a function of Al doping concentrations for cases with and without a hydrogenic donor atom. It has been observed that the absorption coefficient strength and/or resonant absorption wavelength can be adjusted by changing the Al content of inner-barrier and/or outer-barrier regions. Besides, it has been shown that the donor atom has an important effect on the control of the electronic and optical properties of the structure. The results have been presented as a function of the Al contents of the inner-barrier x and outer-barrier y regions and probable physical reasons have been discussed.

  3. Electrical degradation mechanisms of RF power GaAs PHEMTs

    E-Print Network [OSTI]

    Villanueva, Anita A. (Anita Ariel), 1978-

    2007-01-01

    GaAs Pseudomorphic High-Electron Mobility Transistors (PHEMTs) are widely used in RF power applications. Since these devices typically operate at high power levels and under high voltage biasing, their electrical reliability ...

  4. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  5. Low temperature carrier redistribution dynamics in InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Badcock, T. J., E-mail: Thomas.badcock@crl.toshiba.co.uk; Dawson, P.; Davies, M. J. [School of Physics and Astronomy, Photon Science Institute, Alan Turing Building, University of Manchester, Manchester M13 9PL (United Kingdom); Kappers, M. J.; Massabuau, F. C.-P.; Oehler, F.; Oliver, R. A.; Humphreys, C. J. [Department of Materials Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

    2014-03-21

    We have studied the carrier recombination dynamics in an InGaN/GaN multiple quantum well structure as a function of emission energy and excitation density between temperatures of 10?K and 100?K. Under relatively low levels of excitation, the photoluminescence (PL) intensity and decay time of emission on the high energy side of the luminescence spectrum decrease strongly between 10?K and 50?K. In contrast, for emission detected on the low energy side of the spectrum, the PL intensity and decay time increase over the same temperature range. These results are consistent with a thermally activated carrier redistribution process in which the (temperature dependent) average timescale for carrier transfer into or out of a localised state depends on the energy of the given state. Thus, the transfer time out of shallow, weakly localised states is considerably shorter than the arrival time into more deeply localised states. This picture is consistent with carriers hopping between localisation sites in an uncorrelated disorder potential where the density of localised states decreases with increasing localisation depth, e.g., a exponential or Gaussian distribution resulting from random alloy disorder. Under significantly higher levels of excitation, the increased occupation fraction of the localised states results in a greater average separation distance between unoccupied localised states, causing a suppression of the spectral and dynamic signatures of the hopping transfer of carriers.

  6. Green (In,Ga,Al)P-GaP light-emitting diodes grown on high-index GaAs surfaces

    SciTech Connect (OSTI)

    Ledentsov, N. N., E-mail: nikolay.ledentsov@v-i-systems.com; Shchukin, V. A. [VI Systems GmbH, Hardenbergstr. 7, Berlin D-10623 (Germany); Lyytikäinen, J.; Okhotnikov, O. [Optoelectronics Research Centre, Tampere University of Technology, Tampere FI-33720 (Finland); Shernyakov, Yu. M.; Payusov, A. S.; Gordeev, N. Yu.; Maximov, M. V. [A. F. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, St. Petersburg 194021 (Russian Federation); Schlichting, S.; Nippert, F.; Hoffmann, A. [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, Berlin D-10623 (Germany)

    2014-11-03

    We report on green (550–560?nm) electroluminescence (EL) from (Al{sub 0.5}Ga{sub 0.5}){sub 0.5}In{sub 0.5}P-(Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P double p-i-n heterostructures with monolayer-scale GaP insertions in the cladding layers and light-emitting diodes based thereupon. The structures are grown side-by-side on high-index and (100) GaAs substrates by molecular beam epitaxy. At moderate current densities (?500?A/cm{sup 2}), the EL intensity of the structures is comparable for all substrate orientations. Opposite to the (100)-grown strictures, the EL spectra of (211) and (311)-grown devices are shifted towards shorter wavelengths (?550?nm at room temperature). At high current densities (>1?kA/cm{sup 2}), a much higher EL intensity is achieved for the devices grown on high-index substrates. The integrated intensity of (311)-grown structures gradually saturates at current densities above 4?kA/cm{sup 2}, whereas no saturation is revealed for (211)-grown structures up to the current densities above 14?kA/cm{sup 2}. We attribute the effect to the surface orientation-dependent engineering of the GaP band structure, which prevents the escape of the nonequilibrium electrons into the indirect conduction band minima of the p-doped (Al{sub 0.8}Ga{sub 0.2}){sub 0.5}In{sub 0.5}P cladding layers.

  7. Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

    SciTech Connect (OSTI)

    Zhuang, Y. D.; Shields, P. A.; Allsopp, D. W. E., E-mail: d.allsopp@bath.ac.uk [Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY (United Kingdom); Bruckbauer, J.; Edwards, P. R.; Martin, R. W. [Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

    2014-11-07

    Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280?nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain.

  8. High intensity low temperature (HILT) performance of space concentrator GaInP/GaInAs/Ge MJ SCs

    SciTech Connect (OSTI)

    Shvarts, Maxim Z., E-mail: shvarts@scell.ioffe.ru; Kalyuzhnyy, Nikolay A.; Mintairov, Sergey A.; Soluyanov, Andrei A.; Timoshina, Nailya Kh. [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021 (Russian Federation); Gudovskikh, Alexander S. [Saint-Petersburg Academic University - Nanotechnology Research and Education Centre RAS, St. Petersburg, 194021 (Russian Federation); Luque, Antonio [Ioffe Physical-Technical Institute, 26 Polytekhnicheskaya str., St.-Petersburg, 194021, Russia and Instituto de Energia Solar, Universidad Politecnica de Madrid, Madrid (Spain)

    2014-09-26

    In the work, the results of an investigation of GaInP/GaInAs/Ge MJ SCs intended for converting concentrated solar radiation, when operating at low temperatures (down to ?190 °C) are presented. A kink of the cell I-V characteristic has been observed in the region close to V{sub oc} starting from ?20°C at operation under concentrated sunlight. The causes for its occurrence have been analyzed and the reasons for formation of a built-in potential barrier for majority charge carriers at the n-GaInP/n-Ge isotype hetero-interface are discussed. The effect of charge carrier transport in n-GaInP/n-pGe heterostructures on MJ SC output characteristics at low temperatures has been studied including EL technique.

  9. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  10. Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers

    E-Print Network [OSTI]

    Keogh, David Martin

    2006-01-01

    assuming the material growth technology allows for all ofand a relatively immature growth technology, as well as theof the art for InGaN growth technology. Epitaxial growth of

  11. Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Sztein, Alexander, E-mail: asztein@umail.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106 (United States); Bowers, John E.; DenBaars, Steven P.; Nakamura, Shuji [Materials Department, University of California, Santa Barbara, California 93106 (United States); Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States)

    2014-01-27

    A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9?W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

  12. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors 

    E-Print Network [OSTI]

    Johnson, Derek Wade

    2014-07-31

    production is projected to consume ~100,000 wafers per year by 2015 (Yole Development, “Power GaN – 2012 Edition”), this manufacturing breakthrough represents potential savings of ~$17 million per year....

  13. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  14. The first principle study of Ni{sub 2}ScGa and Ni{sub 2}TiGa

    SciTech Connect (OSTI)

    Özduran, Mustafa; Turgut, Kemal; Arikan, Nihat; ?yigör, Ahmet; Candan, Abdullah

    2014-10-06

    We computed the electronic structure, elastic moduli, vibrational properties, and Ni{sub 2}TiGa and Ni{sub 2}ScGa alloys in the cubic L2{sub 1} structure. The obtained equilibrium lattice constants of these alloys are in good agreement with available data. In cubic systems, there are three independent elastic constants, namely C{sub 11}, C{sub 12} and C{sub 44}. We calculated elastic constants in L2{sub 1} structure for Ni{sub 2}TiGa and Ni{sub 2}ScGa using the energy-strain method. The electronic band structure, total and partial density of states for these alloys were investigated within density functional theory using the plane-wave pseudopotential method implemented in Quantum-Espresso program package. From band structure, total and projected density of states, we observed metallic characters of these compounds. The electronic calculation indicate that the predominant contributions of the density of states at Fermi level come from the Ni 3d states and Sc 3d states for Ni{sub 2}TiGa, Ni 3d states and Sc 3d states for Ni{sub 2}ScGa. The computed density of states at Fermi energy are 2.22 states/eV Cell for Ni{sub 2}TiGa, 0.76 states/eV Cell for Ni{sub 2}ScGa. The vibrational properties were obtained using a linear response in the framework at the density functional perturbation theory. For the alloys, the results show that the L2{sub 1} phase is unstable since the phonon calculations have imagine modes.

  15. J. Eukaryot. Microbiol., 51(5), 2004 pp. 529535 2004 by the Society of Protozoologists

    E-Print Network [OSTI]

    Archibald, John

    A. FIELD,a CATHERINE LI,b BORIS STRIEPENb and PATRICK J. KEELINGa aCanadian Institute for Advanced Biology, University of Georgia, 724 Biological Sciences Building, Athens, Georgia 30602, USA ABSTRACT in to the endomembrane system) and a chloroplast transit peptide (for transport across the chloroplast envelope mem

  16. Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure

    SciTech Connect (OSTI)

    Khmissi, H.; Baira, M.; Bouzaieene, L.; Saidi, F.; Maaref, H. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Sfaxi, L. [Laboratoire de Micro-optoelectronique et Nanostructures, Universite de Monastir (Tunisia); Universite de Sousse Faculte des Sciences de Monastir, Avenue de l'Environnement 5019 Monastir (Tunisia); Bru-Chevallier, C. [Institut des Nanotechnologies de Lyon (INL), CNRS UMR-5270, INSA-LYON, 7, Avenue Jean Capelle, Bat. Blaise Pascal, 69621 Villeurbanne (France)

    2011-03-01

    Optical properties of InAs quantum dots (QDs) inserted in AlGaAs/GaAs modulation doped heterostructure are investigated. To study the effect of carrier transfer behavior on the luminescence of self-assembled quantum dots, a series of sample has been prepared using molecular beam epitaxy (Riber 32 system) in which we have varied the thickness separating the delta dopage and the InAs quantum dots layer. Photoluminescence spectra show the existence of two peaks that can be attributed to transition energies from the ground state (E{sub 1}-HH{sub 1}) and the first excited state (E{sub 2}-HH{sub 2}). Two antagonist effects have been observed, a blue shift of the emission energies result from electron transferred from the AlGaAs/GaAs heterojunction to the InAs quantum dots and a red shift caused by the quantum confined Stark effect due to the internal electric field existing In the AlGaAs/GaAs heterojunction.

  17. Effects of high-temperature AIN buffer on the microstructure of AlGaN/GaN HEMTs

    SciTech Connect (OSTI)

    Coerekci, S.; Oeztuerk, M. K.; Yu, Hongbo; Cakmak, M.; Oezcelik, S.; Oezbay, E.

    2013-06-15

    Effects on AlGaN/GaN high-electron-mobility transistor structure of a high-temperature AlN buffer on sapphire substrate have been studied by high-resolution x-ray diffraction and atomic force microscopy techniques. The buffer improves the microstructural quality of GaN epilayer and reduces approximately one order of magnitude the edge-type threading dislocation density. As expected, the buffer also leads an atomically flat surface with a low root-mean-square of 0.25 nm and a step termination density in the range of 10{sup 8} cm{sup -2}. Due to the high-temperature buffer layer, no change on the strain character of the GaN and AlGaN epitaxial layers has been observed. Both epilayers exhibit compressive strain in parallel to the growth direction and tensile strain in perpendicular to the growth direction. However, an high-temperature AlN buffer layer on sapphire substrate in the HEMT structure reduces the tensile stress in the AlGaN layer.

  18. p-doping-free InGaN/GaN light-emitting diode driven by three-dimensional hole gas

    SciTech Connect (OSTI)

    Zhang, Zi-Hui; Tiam Tan, Swee; Kyaw, Zabu; Liu, Wei; Ji, Yun; Ju, Zhengang; Zhang, Xueliang [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore) [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Wei Sun, Xiao, E-mail: EXWSUN@ntu.edu.sg [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electronics and Electrical Engineering, South University of Science and Technology of China, Shenzhen, Guangdong 518055 (China); Volkan Demir, Hilmi, E-mail: VOLKAN@stanfordalumni.org [LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); LUMINOUS Centre of Excellence for Semiconductor Lighting and Displays, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore (Singapore); Department of Electrical and Electronics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey); Department of Physics, UNAM-Institute of Material Science and Nanotechnology, Bilkent University, Ankara TR-06800 (Turkey)

    2013-12-23

    Here, GaN/Al{sub x}Ga{sub 1-x}N heterostructures with a graded AlN composition, completely lacking external p-doping, are designed and grown using metal-organic-chemical-vapour deposition (MOCVD) system to realize three-dimensional hole gas (3DHG). The existence of the 3DHG is confirmed by capacitance-voltage measurements. Based on this design, a p-doping-free InGaN/GaN light-emitting diode (LED) driven by the 3DHG is proposed and grown using MOCVD. The electroluminescence, which is attributed to the radiative recombination of injected electrons and holes in InGaN/GaN quantum wells, is observed from the fabricated p-doping-free devices. These results suggest that the 3DHG can be an alternative hole source for InGaN/GaN LEDs besides common Mg dopants.

  19. Lasing characteristics of GaSb/GaAs self-assembled quantum dots embedded in an InGaAs quantum well

    E-Print Network [OSTI]

    Jalali. Bahram

    Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico, New Mexico 87545 Received 26 February 2007; accepted 1 June 2007; published online 28 June 2007 intriguing optoelectronic device possibilities on GaAs substrates including lasers, detectors, or solar cells

  20. Ritual and Authority in Early Athens

    E-Print Network [OSTI]

    Laughy, Michael Harold

    2010-01-01

    on funerary amphorae with prothesis and ekphora scenes. See,Avebury. Ahlberg, G. 1971. Prothesis and Ekphora in Greekthe introduction of the prothesis scene on krater. 119 By

  1. Ritual and Authority in Early Athens

    E-Print Network [OSTI]

    Laughy, Michael Harold

    2010-01-01

    9&ôD&Aô, . Note also the dedication of a discus, IG i 3 989,+31,/! ’ %L A$µD/,; 556. Dedication of Altar of Twelve Gods:as the earliest state dedication in Athenian his- 595. Thuc.

  2. Athens, Greece: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece: Energy Resources Jump to: navigation, search

  3. Athens, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to:Greece: Energy Resources Jump to: navigation, searchJump

  4. Athens, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A SOpenAshley, Ohio:Atchison-Holt Electric Coop

  5. Athens, Wisconsin: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A SOpenAshley, Ohio:Atchison-Holt Electric CoopWisconsin:

  6. Athens Utility Board | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowaWisconsin: EnergyYork Jump|Line SitingOil andAshtabulaIowa) Jump

  7. A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs

    E-Print Network [OSTI]

    York, Robert A.

    amplifier using GaN- HEMTs-on-Sapphire. I INTRODUCTION GaN HEMTs have enormous potential for realizing high-power Traveling Wave Power Amplifier circuit (TWPA)[1][2] for realization of wideband power amplifiersWE4A-5 A 3-10 GHZLCR-matched Power Amplifier using Flip-Chip Mounted AlGaN/GaN HEMTs Jane J

  8. Intermixing of InGaAs/GaAs Quantum Well Using Multiple Cycles Annealing Cu-doped SiO2

    SciTech Connect (OSTI)

    Hongpinyo, V; Ding, Y H; Dimas, C E; Wang, Y; Ooi, B S; Qiu, W; Goddard, L L; Behymer, E M; Cole, G D; Bond, T C

    2008-06-11

    The authors investigate the effect of intermixing in InGaAs/GaAs quantum well structure using Cu-doped SiO{sub 2}. The incorporation of Cu into the silica film yields larger bandgap shift than typical impurity-free vacancy diffusion (IFVD) method at a lower activation temperature. We also observe enhancement of the photoluminescence (PL) signal from the intermixed InGaAs/GaAs quantum well structure after being cycle-annealed at 850 C.

  9. Metamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a

    E-Print Network [OSTI]

    Haller, Gary L.

    . INTRODUCTION Triple-junction metamorphic solar cells have reached ef- ficiencies as high as 41.1% by combiningMetamorphic GaAsP buffers for growth of wide-bandgap InGaP solar cells J. Simon,1,a S. Tomasulo,1 P-yP solar cells. Tensile-strained GaAsxP1-x buffers grown on GaAs using unoptimized conditions

  10. FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS

    E-Print Network [OSTI]

    Atwater, Harry

    FIRST DEMONSTRATION OF MONOLITHIC InP-BASED InAlAs/InGaAsP/InGaAs TRIPLE JUNCTION SOLAR CELLS RobynAlAs/InGaAsP/InGaAs triple junction solar cell grown on InP substrate. X-ray diffraction characterization shows high quality solar cell materials. Preliminary 1-sun AM1.5D testing of the triple junction solar cell shows promising

  11. Characterization of Cu(In,Ga)Se2 (CIGS) films with varying gallium ratios

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claypoole, Jesse; Peace, Bernadette; Sun, Neville; Dwyer, Dan; Eisaman, Matthew D.; Haldar, Pradeep; Efstathiadis, Harry

    2015-09-05

    Cu(In1-x,Gax)Se2 (CIGS) absorber layers were deposited on molybdenum (Mo) coated soda-lime glass substrates with varying Ga content (described as Ga/(In+Ga) ratios) with respect to depth. As the responsible mechanisms for the limitation of the performance of the CIGS solar cells with high Ga contents are not well understood, the goal of this work was to investigate different properties of CIGS absorber films with Ga/(In+Ga) ratios varied between 0.29 and 0.41 (as determined by X-ray florescence spectroscopy (XRF)) in order to better understand the role that the Ga content has on film quality. The Ga grading in the CIGS layer hasmore »the effect causing a higher bandgap toward the surface and Mo contact while the band gap in the middle of the CIGS layer is lower. Also, a wider and larger Ga/(In+Ga) grading dip located deeper in the CIGS absorber layers tend to produce larger grains in the regions of the films that have lower Ga/(In+Ga) ratios. It was found that surface roughness decreases from 51.2 nm to 41.0 nm with increasing Ga/(In+Ga) ratios. However, the surface roughness generally decreases if the Ga grading occurs deeper in the absorber layer.« less

  12. Radiation damage of GaAs thin-film solar cells on Si substrates

    SciTech Connect (OSTI)

    Itoh, Y.; Yamaguchi, M.; Nishioka, T.; Yamamoto, A.

    1987-01-15

    1-MeV electron irradiation damages in GaAs thin-film solar cells on Si substrates are examined for the first time. Damage constant for minority-carrier diffusion length in GaAs heteroepitaxial films on Si substrates is found to be the same as that in GaAs homoepitaxial films on GaAs substrates. This agreement suggests that GaAs/Si has the same defect introduction rate with radiation as GaAs/GaAs. The degradation of GaAs solar cells on Si with electron irradiation is less than that of GaAs solar cells on GaAs, because in the present, GaAs films on Si substrates have lower minority-carrier diffusion length compared to GaAs films on GaAs and these films are insensitive to radiation. The p/sup +/-p/sup +/-n AlGaAs-GaAs heteroface solar cell with junction depth of about 0.3 ..mu..m is concluded to be useful for a high-efficiency and radiation-resistant solar cell fabricated on a Si substrate.

  13. Laser Gain and Threshold Properties in Compressive-Strained and Lattice-Matched GaInNAs/GaAs Quantum Wells

    SciTech Connect (OSTI)

    Chow, W.W.; Jones, E.D.; Modine, N.A.; Allerman, A.A.; Kurtz, S.R.

    1999-08-04

    The optical gain spectra for compressive-strained and lattice-matched GaInNAs/GaAs quantum wells are computed using a microscopic laser theory. From these spectra, the peak gain and carrier radiative decay rate as functions of carrier density are determined. These dependences allow the study of lasing threshold current density for different GAInNAs/GaAs laser structures.

  14. Metal contacts on ZnSe and GaN

    SciTech Connect (OSTI)

    Duxstad, K J [Univ. of California, Berkeley, CA (United States). Materials Science and Mineral Engineering

    1997-05-01

    Recently, considerable interest has been focused on the development of blue light emitting materials and devices. The focus has been on GaN and ZnSe, direct band gap semiconductors with bands gaps of 3.4 and 2.6 eV, respectively. To have efficient, reliable devices it is necessary to have thermally and electrically stable Ohmic contacts. This requires knowledge of the metal-semiconductor reaction behavior. To date few studies have investigated this behavior. Much information has accumulated over the years on the behavior of metals on Si and GaAs. This thesis provides new knowledge for the more ionic wide band gap semiconductors. The initial reaction temperatures, first phases formed, and phase stability of Pt, Pd, and Ni on both semiconductors were investigated. The reactions of these metals on ZnSe and GaN are discussed in detail and correlated with predicted behavior. In addition, comparisons are made between these highly ionic semiconductors and Si and GaAs. The trends observed here should also be applicable to other II-VI and III-Nitride semiconductor systems, while the information on phase formation and stability should be useful in the development of contacts for ZnSe and GaN devices.

  15. Joshua Smith Spring 2006

    E-Print Network [OSTI]

    Radcliffe, David

    Road, Room 101 Athens, GA 30602-1510 (706) 583-0373 · Fax (706) 583-0612 jroskie@uga.edu This report Manager UGA River Basin Center 110 Riverbend Road, Room 101 Athens, GA 30602-1510 (706) 542-9745 · Fax..........................................................................................8 B. City of Griffin

  16. Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

    SciTech Connect (OSTI)

    Ahmadi, Elaheh; Mishra, Umesh K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106 (United States); Chalabi, Hamidreza [Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305 (United States); Kaun, Stephen W.; Shivaraman, Ravi; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States)

    2014-10-07

    The influence of alloy clustering on fluctuations in the ground state energy of the two-dimensional electron gas (2DEG) in AlGaN/GaN and InAlN/GaN heterostructures is studied. We show that because of these fluctuations, alloy clustering degrades the mobility even when the 2DEG wavefunction does not penetrate the alloy barrier unlike alloy disorder scattering. A comparison between the results obtained for AlGaN/GaN and InAlN/GaN heterostructures shows that alloy clustering limits the 2DEG mobility to a greater degree in InAlN/GaN heterostructures. Our study also reveals that the inclusion of an AlN interlayer increases the limiting mobility from alloy clustering. Moreover, Atom probe tomography is used to demonstrate the random nature of the fluctuations in the alloy composition.

  17. The design, construction, and monitoring of photovoltaic power system and solar thermal system on the Georgia Institute of Technology Aquatic Center. Volume 1

    SciTech Connect (OSTI)

    Long, R.C.

    1996-12-31

    This is a report on the feasibility study, design, and construction of a PV and solar thermal system for the Georgia Tech Aquatic Center. The topics of the report include a discussion of site selection and system selection, funding, design alternatives, PV module selection, final design, and project costs. Included are appendices describing the solar thermal system, the SAC entrance canopy PV mockup, and the PV feasibility study.

  18. Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence

    SciTech Connect (OSTI)

    Schmidt, Gordon Müller, Marcus; Veit, Peter; Bertram, Frank; Christen, Jürgen; Glauser, Marlene; Carlin, Jean-François; Cosendey, Gatien; Butté, Raphaël; Grandjean, Nicolas

    2014-07-21

    Using cathodoluminescence spectroscopy directly performed in a scanning transmission electron microscope at liquid helium temperatures, the optical and structural properties of a 62 InGaN/GaN multiple quantum well embedded in an AlInN/GaN based microcavity are investigated at the nanometer scale. We are able to spatially resolve a spectral redshift between the individual quantum wells towards the surface. Cathodoluminescence spectral linescans allow directly visualizing the critical layer thickness in the quantum well stack resulting in the onset of plastic relaxation of the strained InGaN/GaN system.

  19. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    SciTech Connect (OSTI)

    Tsatsulnikov, A. F., E-mail: Andrew@beam.ioffe.ru; Lundin, W. V.; Sakharov, A. V.; Zavarin, E. E.; Usov, S. O.; Nikolaev, A. E.; Cherkashin, N. A.; Ber, B. Ya.; Kazantsev, D. Yu. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Mizerov, M. N. [Russian Academy of Sciences, Center for Microelectronics, Ioffe Physicotechnical Institute (Russian Federation); Park, Hee Seok [Samsung Electro-Mechanics Co. Ltd. (Korea, Republic of); Hytch, M.; Hue, F. [National Center for Scientific Research, Center for Material Elaboration and Structural Studies (France)

    2010-01-15

    The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

  20. Graphene/GaN diodes for ultraviolet and visible photodetectors

    SciTech Connect (OSTI)

    Lin, Fang; Chen, Shao-Wen; Meng, Jie; Tse, Geoffrey; Fu, Xue-Wen; Xu, Fu-Jun [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Shen, Bo; Liao, Zhi-Min, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn; Yu, Da-Peng, E-mail: liaozm@pku.edu.cn, E-mail: yudp@pku.edu.cn [State Key Laboratory for Mesoscopic Physics, Department of Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)

    2014-08-18

    The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights. The physical mechanisms of the photoelectric response of the diodes with different light wavelengths are different. For UV illumination, the photo-generated carriers lower the Schottky barrier and increase the photocurrent. For green light illumination, as the photon energy is smaller than the bandgap of GaN, the hot electrons excited in graphene via internal photoemission are responsible for the photoelectric response. Using graphene as a transparent electrode, the diodes show a ?mS photoresponse, providing an alternative route toward multi-wavelength photodetectors.

  1. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D.J.; Kurtz, S.R.; Kibbler, A.E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-01

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth. {copyright} {ital 1997 American Institute of Physics.}

  2. Polycrystalline MBE-grown GaAs for solar cells

    SciTech Connect (OSTI)

    Friedman, D. J.; Kurtz, Sarah R.; Kibbler, A. E.; Al-Jassim, M.; Jones, K.; Keyes, B.; Matson, R.

    1997-02-15

    This paper will discuss initial studies of thin-film GaAs grown by molecular-beam epitaxy for use in developing a thin-film GaAs solar cell. Photocurrent and photoluminescence intensity are related to the material morphology as a function of growth conditions. Growth temperature and V/III ratio have a dramatic effect on the photocurrent. However, it seems likely that even after optimizing such growth parameters, it will be necessary to provide substrates that can provide templates to enhance grain size from the start of thin-film growth.

  3. Highly transparent ammonothermal bulk GaN substrates

    SciTech Connect (OSTI)

    Jiang, WK; Ehrentraut, D; Downey, BC; Kamber, DS; Pakalapati, RT; Do Yoo, H; D'Evelyn, MP

    2014-10-01

    A novel apparatus has been employed to grow ammonothermal (0001) gallium nitride (GaN) with diameters up to 2 in The crystals have been characterized by x-ray diffraction rocking-curve (XRC) analysis, optical and scanning electron microscopy (SEM), cathodoluminescence (CL), and optical spectroscopy. High crystallinity GaN with FWHM values about 20-50 arcsec and dislocation densities below 1 x 10(5) cm(-2) have been obtained. High optical transmission was achieved with an optical absorption coefficient below 1 cm(-1) at a wavelength of 450 nm. (C) 2014 Elsevier B.V. All rights reserved.

  4. A hole modulator for InGaN/GaN light-emitting diodes Zi-Hui Zhang, Zabu Kyaw, Wei Liu, Yun Ji, Liancheng Wang, Swee Tiam Tan, Xiao Wei Sun, and Hilmi Volkan

    E-Print Network [OSTI]

    Demir, Hilmi Volkan

    well on optical power of light-emitting diodes Appl. Phys. Lett. 96, 051113 (2010); 10-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which

  5. Strong enhancement of terahertz emission from GaAs in InAs/GaAs quantum dot structures

    SciTech Connect (OSTI)

    Estacio, Elmer; Pham, Minh Hong; Takatori, Satoru; Cadatal-Raduban, Marilou; Nakazato, Tomoharu; Shimizu, Toshihiko; Sarukura, Nobuhiko; Somintac, Armando; Defensor, Michael; Awitan, Fritz Christian B.; Jaculbia, Rafael B.; Salvador, Arnel; Garcia, Alipio

    2009-06-08

    We report on the intense terahertz emission from InAs/GaAs quantum dot (QD) structures grown by molecular beam epitaxy. Results reveal that the QD sample emission was as high as 70% of that of a p-type InAs wafer, the most intense semiconductor emitter to date. Excitation wavelength studies showed that the emission was due to absorption in strained undoped GaAs, and corresponds to a two order-of-magnitude enhancement. Moreover, it was found that multilayer QDs emit more strongly compared with a single layer QD sample. At present, we ascribe the intense radiation to huge strain fields at the InAs/GaAs interface.

  6. Characteristics of InGaP/InGaAs pseudomorphic high electron mobility transistors with triple delta-doped sheets

    SciTech Connect (OSTI)

    Chu, Kuei-Yi; Chiang, Meng-Hsueh Cheng, Shiou-Ying; Liu, Wen-Chau

    2012-02-15

    Fundamental and insightful characteristics of InGaP/InGaAs double channel pseudomorphic high electron mobility transistors (DCPHEMTs) with graded and uniform triple {delta}-doped sheets are coomprehensively studied and demonstrated. To gain physical insight, band diagrams, carrier densities, and direct current characteristics of devices are compared and investigated based on the 2D semiconductor simulator, Atlas. Due to uniform carrier distribution and high electron density in the double InGaAs channel, the DCPHEMT with graded triple {delta}-doped sheets exhibits better transport properties, higher and linear transconductance, and better drain current capability as compared with the uniformly triple {delta}-doped counterpart. The DCPHEMT with graded triple {delta}-doped structure is fabricated and tested, and the experimental data are found to be in good agreement with simulated results.

  7. Terahertz intersubband absorption in non-polar m-plane AlGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Edmunds, C.; Malis, O.; Shao, J.; Shirazi-HD, M.; Manfra, M. J.

    2014-07-14

    We demonstrate THz intersubband absorption (15.6–26.1?meV) in m-plane AlGaN/GaN quantum wells. We find a trend of decreasing peak energy with increasing quantum well width, in agreement with theoretical expectations. However, a blue-shift of the transition energy of up to 14?meV was observed relative to the calculated values. This blue-shift is shown to decrease with decreasing charge density and is, therefore, attributed to many-body effects. Furthermore, a??40% reduction in the linewidth (from roughly 8 to 5?meV) was obtained by reducing the total sheet density and inserting undoped AlGaN layers that separate the wavefunctions from the ionized impurities in the barriers.

  8. High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration

    SciTech Connect (OSTI)

    Young, N. G. Farrell, R. M.; Iza, M.; Speck, J. S.; Perl, E. E.; Keller, S.; Bowers, J. E.; Nakamura, S.; DenBaars, S. P.

    2014-04-21

    We demonstrate InGaN/GaN multiple quantum well solar cells grown by metalorganic chemical vapor deposition on a bulk (0001) substrate with high-performance broadband optical coatings to improve light absorption. A front-side anti-reflective coating and a back-side dichroic mirror were designed to minimize front surface reflections across a broad spectral range and maximize rear surface reflections only in the spectral range absorbed by the InGaN, making the cells suitable for multijunction solar cell integration. Application of optical coatings increased the peak external quantum efficiency by 56% (relative) and conversion efficiency by 37.5% (relative) under 1 sun AM0 equivalent illumination.

  9. InGaAs/GaAsP strain balanced multi-quantum wires grown on misoriented GaAs substrates for high efficiency solar cells

    SciTech Connect (OSTI)

    Alonso-Álvarez, D.; Thomas, T.; Führer, M.; Hylton, N. P.; Ekins-Daukes, N. J.; Lackner, D.; Philipps, S. P.; Bett, A. W.; Sodabanlu, H.; Fujii, H.; Watanabe, K.; Sugiyama, M.; Nasi, L.; Campanini, M.

    2014-08-25

    Quantum wires (QWRs) form naturally when growing strain balanced InGaAs/GaAsP multi-quantum wells (MQW) on GaAs [100] 6° misoriented substrates under the usual growth conditions. The presence of wires instead of wells could have several unexpected consequences for the performance of the MQW solar cells, both positive and negative, that need to be assessed to achieve high conversion efficiencies. In this letter, we study QWR properties from the point of view of their performance as solar cells by means of transmission electron microscopy, time resolved photoluminescence and external quantum efficiency (EQE) using polarised light. We find that these QWRs have longer lifetimes than nominally identical QWs grown on exact [100] GaAs substrates, of up to 1??s, at any level of illumination. We attribute this effect to an asymmetric carrier escape from the nanostructures leading to a strong 1D-photo-charging, keeping electrons confined along the wire and holes in the barriers. In principle, these extended lifetimes could be exploited to enhance carrier collection and reduce dark current losses. Light absorption by these QWRs is 1.6 times weaker than QWs, as revealed by EQE measurements, which emphasises the need for more layers of nanostructures or the use light trapping techniques. Contrary to what we expected, QWR show very low absorption anisotropy, only 3.5%, which was the main drawback a priori of this nanostructure. We attribute this to a reduced lateral confinement inside the wires. These results encourage further study and optimization of QWRs for high efficiency solar cells.

  10. Effect of interface states on the performance of GaAs p -i far-infrared

    E-Print Network [OSTI]

    Perera, A. G. Unil

    , Georgia 30303 H. C. Liu and M. Buchanan Institute for Microstructural Sciences, National Research Council Received 13 August 1999; accepted 2 November 1999 Interface states have been shown to have an appreciable by the energy of the direct ionization of shallow dopants in semiconductors, e.g., Si up to 40 m, Ge up to 220 m

  11. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda [University of Notre Dame, IN (United States); Song, Bo [Cornell University, Ithaca, NY (United States); Qi, Meng [University of Notre Dame, IN (United States); Hu, Zongyang [University of Notre Dame, IN (United States); Nomoto, Kazuki [University of Notre Dame, IN (United States); Yan, Xiaodong [University of Notre Dame, IN (United States); Cao, Yu [IQE, Westborough, MA (United States); Johnson, Wayne [IQE, Westborough, MA (United States); Kohn, Erhard [University of Notre Dame, IN (United States); Jena, Debdeep [Cornell University, Ithaca, NY (United States); Xing, Grace Huili [Cornell University, Ithaca, NY (United States)

    2015-04-01

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m?{center_dot}cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW{center_dot}cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  12. Electrically pumped single-photon emission at room temperature from a single InGaN/GaN quantum dot

    SciTech Connect (OSTI)

    Deshpande, Saniya; Frost, Thomas; Hazari, Arnab; Bhattacharya, Pallab, E-mail: pkb@eecs.umich.edu [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Avenue, Ann Arbor, Michigan 48109 (United States)

    2014-10-06

    We demonstrate a semiconductor quantum dot based electrically pumped single-photon source operating at room temperature. Single photons emitted in the red spectral range from single In{sub 0.4}Ga{sub 0.6}N/GaN quantum dots exhibit a second-order correlation value g{sup (2)}(0) of 0.29, and fast recombination lifetime ?1.3 ±0.3 ns at room temperature. The single-photon source can be driven at an excitation repetition rate of 200?MHz.

  13. 1.9 kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhu, Mingda; Song, Bo; Qi, Meng; Hu, Zongyang; Nomoto, Kazuki; Yan, Xiaodong; Cao, Yu; Johnson, Wayne; Kohn, Erhard; Jena, Debdeep; et al

    2015-02-16

    In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific on-resistance RON,SP (5.12 m? · cm2), a low turn-on voltage (1.9 kV), were simultaneously achieved in devices with a 25 ?m anode/cathode separation, resulting in a power figure-of-merit (FOM) BV2/RON,SP of 727 MW·cm2. The record high breakdown voltage of 1.9 kV is attributed to the dual field plate structure.

  14. Theory of weak localization in ferromagnetic (Ga,Mn)As 

    E-Print Network [OSTI]

    Garate, Ion; Sinova, Jairo; Jungwirth, T.; MacDonald, A. H.

    2009-01-01

    We study quantum interference corrections to the conductivity in (Ga,Mn)As ferromagnetic semiconductors using a model with disordered valence-band holes coupled to localized Mn moments through a p-d kinetic-exchange interaction. We find that at Mn...

  15. Low-temperature magnetization of (Ga,Mn) As semiconductors 

    E-Print Network [OSTI]

    Jungwirth, T.; Masek, J.; Wang, KY; Edmonds, KW; Sawicki, M.; Polini, M.; Sinova, Jairo; MacDonald, AH; Campion, RP; Zhao, LX; Farley, NRS; Johal, TK; van der Laan, G.; Foxon, CT; Gallagher, BL.

    2006-01-01

    the semiphenomenological virtual crystal model the valence band holes experience a mean-field hMF =JpdNMn?S , and the band Hamiltonian can then be written as H? MF=H? KL?B?+hMFs?z, where H? KL?B? is the B-dependent six- band Kohn-Luttinger Hamiltonian of the GaAs host...

  16. Ohmic contacts for high-temperature GaP devices 

    E-Print Network [OSTI]

    Van der Hoeven, Willem Bernard

    1981-01-01

    in Table II, heat treatments have also been made by laser. One of the earliest papers that describe laser annealing to obtain ohmic contacts to GaP appeared in 1974 (20] . In this paper, Pounds, Saifi, and Hahm reported to have obtained ohmic contacts...

  17. High-quality InP on GaAs

    E-Print Network [OSTI]

    Quitoriano, Nathaniel Joseph

    2006-01-01

    In addition to traditional telecommunication applications, devices based on InP have received increased attention for high-performance electronics. InP growth on GaAs is motivated by the fact that InP wafers are smaller, ...

  18. Nanoscale GaAs metalsemiconductormetal photodetectors fabricated using nanoimprint lithography

    E-Print Network [OSTI]

    ­V) characteristics of the contacts are very sensi- tive to the surface states and defects. In this letter, we report mold with interdigited fin- gers was first created on a silicon substrate. Next, a layer of polymethylmethancrylate PMMA was spun on a semi- insulating SI GaAs substrate. Before imprinting, both the mold

  19. Properties of H, O and C in GaN

    SciTech Connect (OSTI)

    Pearton, S.J.; Abernathy, C.R.; Lee, J.W.

    1996-04-01

    The electrical properties of the light ion impurities H, O and C in GaN have been examined in both as-grown and implanted material. H is found to efficiently passivate acceptors such as Mg, Ca and C. Reactivation occurs at {ge} 450 C and is enhanced by minority carrier injection. The hydrogen does not leave the GaN crystal until > 800 C, and its diffusivity is relatively high ({approximately} 10{sup {minus}11} cm{sup 2}/s) even at low temperatures (< 200 C) during injection by wet etching, boiling in water or plasma exposure. Oxygen shows a low donor activation efficiency when implanted into GaN, with an ionization level of 30--40 meV. It is essentially immobile up to 1,100 C. Carbon can produce low p-type levels (3 {times} 10{sup 17} cm{sup {minus}3}) in GaN during MOMBE, although there is some evidence it may also create n-type conduction in other nitrides.

  20. Luminescence properties of defects in GaN

    SciTech Connect (OSTI)

    Reshchikov, Michael A.; Morkoc, Hadis [Department of Electrical Engineering and Physics Department, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

    2005-03-15

    Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds have gained an unprecedented attention due to their wide-ranging applications encompassing green, blue, violet, and ultraviolet (UV) emitters and detectors (in photon ranges inaccessible by other semiconductors) and high-power amplifiers. However, even the best of the three binaries, GaN, contains many structural and point defects caused to a large extent by lattice and stacking mismatch with substrates. These defects notably affect the electrical and optical properties of the host material and can seriously degrade the performance and reliability of devices made based on these nitride semiconductors. Even though GaN broke the long-standing paradigm that high density of dislocations precludes acceptable device performance, point defects have taken the center stage as they exacerbate efforts to increase the efficiency of emitters, increase laser operation lifetime, and lead to anomalies in electronic devices. The point defects include native isolated defects (vacancies, interstitial, and antisites), intentional or unintentional impurities, as well as complexes involving different combinations of the isolated defects. Further improvements in device performance and longevity hinge on an in-depth understanding of point defects and their reduction. In this review a comprehensive and critical analysis of point defects in GaN, particularly their manifestation in luminescence, is presented. In addition to a comprehensive analysis of native point defects, the signatures of intentionally and unintentionally introduced impurities are addressed. The review discusses in detail the characteristics and the origin of the major luminescence bands including the ultraviolet, blue, green, yellow, and red bands in undoped GaN. The effects of important group-II impurities, such as Zn and Mg on the photoluminescence of GaN, are treated in detail. Similarly, but to a lesser extent, the effects of other impurities, such as C, Si, H, O, Be, Mn, Cd, etc., on the luminescence properties of GaN are also reviewed. Further, atypical luminescence lines which are tentatively attributed to the surface and structural defects are discussed. The effect of surfaces and surface preparation, particularly wet and dry etching, exposure to UV light in vacuum or controlled gas ambient, annealing, and ion implantation on the characteristics of the defect-related emissions is described.

  1. Testing a GaAs cathode in SRF gun

    SciTech Connect (OSTI)

    Wang, E.; Kewisch, J.; Ben-Zvi, I.; Burrill, A.; Rao, T.; Wu, Q.; Holmes, D.

    2011-03-28

    RF electron guns with a strained superlattice GaAs cathode are expected to generate polarized electron beams of higher brightness and lower emittance than do DC guns, due to their higher field gradient at the cathode's surface and lower cathode temperature. We plan to install a bulk GaAs:Cs in a SRF gun to evaluate the performance of both the gun and the cathode in this environment. The status of this project is: In our 1.3 GHz 1/2 cell SRF gun, the vacuum can be maintained at nearly 10{sup -12} Torr because of cryo-pumping at 2K. With conventional activation of bulk GaAs, we obtained a QE of 10% at 532 nm, with lifetime of more than 3 days in the preparation chamber and have shown that it can survive in transport from the preparation chamber to the gun. The beam line has been assembled and we are exploring the best conditions for baking the cathode under vacuum. We report here the progress of our test of the GaAs cathode in the SRF gun. Future particle accelerators, such as eRHIC and the ILC require high-brightness, high-current polarized electrons. Strained superlattice GaAs:Cs has been shown to be an efficient cathode for producing polarized electrons. Activation of GaAs with Cs,O(F) lowers the electron affinity and makes it energetically possible for all the electrons, excited into the conduction band that drift or diffuse to the emission surface, to escape into the vacuum. Presently, all operating polarized electron sources, such as the CEBAF, are DC guns. In these devices, the excellent ultra-high vacuum extends the lifetime of the cathode. However, the low field gradient on the photocathode's emission surface of the DC guns limits the beam quality. The higher accelerating gradients, possible in the RF guns, generate a far better beam. Until recently, most RF guns operated at room temperature, limiting the vacuum to {approx}10{sup -9} Torr. This destroys the GaAs's NEA surface. The SRF guns combine the excellent vacuum conditions of DC guns and the high accelerating gradient of the RF guns, potentially offering a long lived cathode with very low emittance. Testing this concept requires preparation of the cathode, transportation to the SRF gun and evaluation of the performance of the cathode and the gun at cryogenic temperatures. In our work at BNL, we successfully activated the bulk GaAs in the preparation chamber. The highest quantum efficient was 10% at 532 nm that fell to 0.5% after 100 hours. We explored three different ways to activate the GaAs. We verified that the GaAs photocathode remains stable for 30 hours in a 10{sup -11} Torr vacuum. Passing the photocathode through the low 10{sup -9} Torr transfer section in several seconds caused the QE to drop to 0.8%. The photocathode with 0.8% QE can be tested for the SRF gun. The gun and beam pipe were prepared and assembled. After baking at 200 C baking, the vacuum of the gun and beam pipe can sustain a low 10{sup -11} Torr at room temperature. The final test to extract electrons from the gun is ongoing. In this paper, we discuss our progress with this SRF gun and the results of the photocathode in preparation chamber and in magnet transfer line.

  2. Health assessment for Cedartown Industries, Cedartown, Polk County, Georgia, Region 4. CERCLIS No. GAD95840674. Preliminary report

    SciTech Connect (OSTI)

    Not Available

    1990-01-29

    The Cedartown Industries, Inc. site has been proposed for the National Priorities List (NPL) by the U.S. Environmental Protection Agency (EPA). The 7-acre site is located in Cedartown, Polk County, Georgia, in the northwest part of the State. In 1986, one sediment sample from an on-site impoundment and two soil samples (one background) were collected on-site and analyzed by EPD. Only Extraction Procedure (EP) Toxicity testing was performed on these samples. The test which measures the concentration of leachate generated from the soil showed leachate with lead concentrations up to 720 parts per million (ppm) and cadmium concentrations up to 1.4 ppm. Based on the information reviewed, ATSDR has concluded that the site is of potential public health concern because humans may be exposed to hazardous substances at concentrations that may result in adverse health effects. As noted in the Human Exposure Pathways Section above, human exposure to lead may occur via ingestion of, inhalation of, and dermal contact with surface water, sediments, soils, ground water, air, and food-chain entities.

  3. Quaternary InGaAsSb Thermophotovoltaic Diodes

    SciTech Connect (OSTI)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  4. Secondary structure and domain architecture of the 23S and 5S rRNAs

    E-Print Network [OSTI]

    Williams, Loren

    Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA, 4 Department of Biology and Biochemistry and Biochemistry, Georgia Institute of Technology, Atlanta, GA 30332, USA, 2 Center for Ribosomal Origins

  5. On the effect of dust particles on global CCN and cloud droplet number1 V.A. Karydis1

    E-Print Network [OSTI]

    Nenes, Athanasios

    Institute of Technology, Atlanta,4 GA5 3 SABIC-Innovative Plastics, Selkirk, NY6 4 NASA Goddard Space Flight, Georgia Institute of Technology, Atlanta, GA3 2 School of Chemical and Biomolecular Engineering, Georgia

  6. Remarkably reduced efficiency droop by using staircase thin InGaN quantum barriers in InGaN based blue light emitting diodes

    SciTech Connect (OSTI)

    Zhou, Kun; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Liu, Jianping, E-mail: mikeda2013@sinano.ac.cn, E-mail: jpliu2010@sinano.ac.cn; Zhang, Shuming; Li, Deyao; Zhang, Liqun; Yang, Hui [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Cai, Jin; Wang, Hui; Wang, H. B. [Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou (China); Key Laboratory of Nanodevices and Applications, Chinese Academy of Sciences, Suzhou (China); Suzhou Nanojoin Photonics Co., Ltd., Suzhou (China)

    2014-10-27

    The efficiency droop of InGaN/GaN(InGaN) multiple quantum well (MQW) light emitting diodes (LEDs) with thin quantum barriers (QB) is studied. With thin GaN QB (3?nm–6?nm thickness), the efficiency droop is not improved, which indicates that hole transport cannot be significantly enhanced by the thin GaN QBs. On the contrary, the efficiency droop was remarkably reduced by using a InGaN staircase QB (InGaN SC-QB) MQWs structure where InGaN SC-QBs lower the transport energy barrier of holes. The efficiency droop ratio was as low as 3.3% up to 200?A/cm{sup 2} for the InGaN SC-QB LED. By using monitoring QW with longer wavelength we observe a much uniform carrier distribution in the InGaN SC-QB LEDs, which reveals the mechanism of improvement in the efficiency droop.

  7. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  8. Nonlinear Terahertz Metamaterials via Field-Enhanced Carrier Dynamics in GaAs

    E-Print Network [OSTI]

    Fan, Kebin

    We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ?20–160??kV/cm drives intervalley scattering. ...

  9. Device-level thermal analysis of GaN-based electronics

    E-Print Network [OSTI]

    Bagnall, Kevin Robert

    2013-01-01

    Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys ...

  10. Light extraction in individual GaN nanowires on Si for LEDs

    E-Print Network [OSTI]

    Zhou, Xiang

    GaN-based nanowires hold great promise for solid state lighting applications because of their waveguiding properties and the ability to grow nonpolar GaN nanowire-based heterostructures, which could lead to increased light ...

  11. Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on

    E-Print Network [OSTI]

    California at Davis, University of

    Inves&ga&ng the Trade-Off between Luminous Efficacy of Radia&on and Color, Canada · Lorne Whitehead, Canada #12;Inves&ga&ng the Trade-Off between Luminous

  12. Characterization of NIR InGaAs imager arrays for the JDEM SNAP mission concept

    E-Print Network [OSTI]

    2006-01-01

    Characterization of NIR InGaAs imager arrays for the JDEMapplications. Keywords: NIR, InGaAs, astronomy, low-1.7um band Near Infrared (NIR) focal plane mosaic with high

  13. Atomic structure of postgrowth annealed epitaxial Fe/(001)GaAs interfaces

    E-Print Network [OSTI]

    LeBeau, James; Hu, Qi O.; Palmstrom, Christopher; Stemmer, Susanne

    2008-01-01

    line pro?le across the interface along the line indicated inHAADF images of the GaAs/Fe interface along ?a? ?11 0? GaAsindicates the location of an interface step. Arrows in ?b?

  14. Plasmonic terahertz detectors based on a high-electron mobility GaAs/AlGaAs heterostructure

    SciTech Connect (OSTI)

    Bia?ek, M. Witowski, A. M.; Grynberg, M.; ?usakowski, J.; Orlita, M.; Potemski, M.; Czapkiewicz, M.; Umansky, V.

    2014-06-07

    In order to characterize magnetic field (B) tunable THz plasmonic detectors, spectroscopy experiments were carried out at liquid helium temperatures and high magnetic fields on devices fabricated on a high electron mobility GaAs/AlGaAs heterostructure. The samples were either gated (the gate of a meander shape) or ungated. Spectra of a photovoltage generated by THz radiation were obtained as a function of B at a fixed THz excitation from a THz laser or as a function of THz photon frequency at a fixed B with a Fourier spectrometer. In the first type of measurements, the wave vector of magnetoplasmons excited was defined by geometrical features of samples. It was also found that the magnetoplasmon spectrum depended on the gate geometry which gives an additional parameter to control plasma excitations in THz detectors. Fourier spectra showed a strong dependence of the magnetoplasmon resonance amplitude on the conduction-band electron filling factor which was explained within a model of the electron gas heating with THz radiation. The study allows to define both the advantages and limitations of plasmonic devices based on high-mobility GaAs/AlGaAs heterostructures for THz detection at low temperatures and high magnetic fields.

  15. On the redox origin of surface trapping in AlGaN/GaN high electron mobility transistors

    SciTech Connect (OSTI)

    Gao, Feng; Chen, Di; Tuller, Harry L.; Thompson, Carl V.; Palacios, Tomás

    2014-03-28

    Water-related redox couples in ambient air are identified as an important source of the surface trapping states, dynamic on-resistance, and drain current collapse in AlGaN/GaN high electron mobility transistors (HEMTs). Through in-situ X-ray photoelectron spectroscopy (XPS), direct signature of the water-related species—hydroxyl groups (OH) was found at the AlGaN surface at room temperature. It was also found that these species, as well as the current collapse, can be thermally removed above 200?°C in vacuum conditions. An electron trapping mechanism based on the H{sub 2}O/H{sub 2} and H{sub 2}O/O{sub 2} redox couples is proposed to explain the 0.5?eV energy level commonly attributed to the surface trapping states. Finally, the role of silicon nitride passivation in successfully removing current collapse in these devices is explained by blocking the water molecules away from the AlGaN surface.

  16. High 400?°C operation temperature blue spectrum concentration solar junction in GaInN/GaN

    SciTech Connect (OSTI)

    Zhao, Liang; Detchprohm, Theeradetch; Wetzel, Christian

    2014-12-15

    Transparent wide gap junctions suitable as high temperature, high flux topping cells have been achieved in GaInN/GaN by metal-organic vapor phase epitaxy. In structures of 25 quantum wells (QWs) under AM1.5G illumination, an open circuit voltage of 2.1?V is achieved. Of the photons absorbed in the limited spectral range of <450?nm, 64.2% are converted to electrons collected at the contacts under zero bias. At a fill factor of 45%, they account for a power conversion efficiency of38.6%. Under concentration, the maximum output power density per sun increases from 0.49?mW/cm{sup 2} to 0.51?mW/cm{sup 2} at 40?suns and then falls 0.42?mW/cm{sup 2} at 150?suns. Under external heating, a maximum of 0.59?mW/cm{sup 2} is reached at 250?°C. Even at 400?°C, the device is fully operational and exceeds room temperature performance. A defect analysis suggests that significantly higher fill factors and extension into longer wavelength ranges are possible with further development. The results prove GaInN/GaN QW solar junctions a viable and rugged topping cell for concentrator photovoltaics with minimal cooling requirements. By capturing the short range spectrum, they reduce the thermal load to any conventional cells stacked behind.

  17. Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers Benjamin J. Stevens1

    E-Print Network [OSTI]

    quantum wells (QW)s,1) and InAs quantum dots at 1.3 mm2) have brought about the commercialization of Ga differential quantum efficiency, T-zero and far field as a function of stripe width. # 2009 The Japan Society offer a number of advantages over their InP counterparts, namely the use of larger substrates (>3 in

  18. Highly Ordered Ga Nanodroplets on a GaAs Surface Formed by a Focused Ion Beam Qiangmin Wei,1

    E-Print Network [OSTI]

    Lu, Wei

    quantum dots by low-energy ion sputtering on a surface has been reported in several semiconductor sys quantum dots on the surface. The mechanism involves the balance between roughening and smoothing actions], Ge [10], as well as a variety of III­V compounds (GaSb [11], InP [12], and InSb [13]) can form

  19. Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells

    SciTech Connect (OSTI)

    Lin, Jie; Llopis, Antonio; Krokhin, Arkadii; Neogi, Arup, E-mail: arup@unt.edu [Department of Physics, University of North Texas, Denton, Texas 76203 (United States); Pereira, Sergio [CICECO, University of Aveiro, 3810-193 Aveiro (Portugal); Watson, Ian M. [SUPA, Institute of Photonics, University of Strathclyde, Glasgow (United Kingdom)

    2014-06-16

    The light enhancement phenomena in InGaN/GaN multi-quantum wells (MQWs) infiltrated with metal nanoparticles (NPs) are studied using resonant and off-resonant localized plasmon interactions. The emission and recombination characteristics of carriers in InGaN/GaN MQW structures with inverted hexagonal pits (IHPs) are modified distinctly depending on the nature of their interaction with the metal NPs and with the pumping and emitted photons. It is observed that the emission intensity of light is significantly enhanced when the emission energy is off-resonant to the localized plasmon frequency of the metal nanoparticles. This results in enhanced emission from MQW due to Au nanoparticles and from IHPs due to Ag nanoparticles. At resonant-plasmon frequency of the Ag NPs, the emission from MQWs is quenched due to the re-absorption of the emitted photons, or due to the drift carriers from c-plane MQWs towards the NPs because of the Coulomb forces induced by the image charge effect.

  20. Molecular Dynamics Simulation of GaAs Molecular Beam Epitaxy D. A. Murdick,1

    E-Print Network [OSTI]

    Wadley, Haydn

    of Virginia, Charlottesville, Virginia 22904, USA 2 Department of Materials, University of Oxford, Oxford OX1 3PH, UK ABSTRACT The vapor deposition of epitaxial GaAs and (Ga,Mn)As thin films during far-temperature growth of Ga0.94Mn0.06As and the Mn clustering trends in as-grown films. INTRODUCTION GaAs is widely used