National Library of Energy BETA

Sample records for general silicon material

  1. GSMSolar formerly Shanghai General Silicon Material Co Ltd |...

    Open Energy Info (EERE)

    GSMSolar formerly Shanghai General Silicon Material Co Ltd Jump to: navigation, search Name: GSMSolar (formerly Shanghai General Silicon Material Co Ltd) Place: Kunshan, Jiangsu...

  2. Longi Silicon Materials Corp | Open Energy Information

    Open Energy Info (EERE)

    Longi Silicon Materials Corp Jump to: navigation, search Name: Longi Silicon Materials Corp Place: Xi'an, Shaanxi Province, China Zip: 710065 Product: A monocrystalline silicon...

  3. Huachang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Huachang Silicon Material Co Ltd Jump to: navigation, search Name: Huachang Silicon Material Co Ltd Place: Jinzhou, Liaoning Province, China Product: A monocrystalline silicon...

  4. Jinzhou Huari Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Huari Silicon Material Co Ltd Jump to: navigation, search Name: Jinzhou Huari Silicon Material Co Ltd Place: China Product: Chinese manufacturer of mono-crystalline silicon ingot....

  5. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

  6. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Silicon Materials and Devices that includes scope, core competencies and capabilities, and contact/web information.

  7. Recent Progress in Silicon-based Spintronic Materials (Book)...

    Office of Scientific and Technical Information (OSTI)

    Book: Recent Progress in Silicon-based Spintronic Materials Citation Details In-Document Search Title: Recent Progress in Silicon-based Spintronic Materials You are accessing a ...

  8. Jiangxi Jiahua Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Jiahua Silicon Material Co Ltd Jump to: navigation, search Name: Jiangxi Jiahua Silicon Material Co Ltd Place: Shangrao, Jiangxi Province, China Product: A PV ingots and wafer...

  9. Jinzhou Rixin Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Silicon Material Co Ltd Jump to: navigation, search Name: Jinzhou Rixin Silicon Material Co Ltd Place: Liaoning Province, China Product: A monosilicon manufacturer in China....

  10. Zhongsheng Semiconductor Silicon Material Co Ltd | Open Energy...

    Open Energy Info (EERE)

    Zhongsheng Semiconductor Silicon Material Co Ltd Jump to: navigation, search Name: Zhongsheng Semiconductor Silicon Material Co Ltd Place: Linzhou, Henan Province, China Product:...

  11. Shaanxi Tianhong Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Tianhong Silicon Material Co Ltd Jump to: navigation, search Name: Shaanxi Tianhong Silicon Material Co Ltd Place: Shaanxi Province, China Sector: Solar Product: A Chinese...

  12. Anhui Tiansheng Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Tiansheng Silicon Material Co Ltd Jump to: navigation, search Name: Anhui Tiansheng Silicon Material Co Ltd Place: Chaohu, Anhui Province, China Zip: 214192 Product: Polysilicon...

  13. Dongqi Leshan Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Dongqi Leshan Silicon Material Co Ltd Jump to: navigation, search Name: Dongqi Leshan Silicon Material Co Ltd Place: Leshan, Sichuan Province, China Product: A Chinese polysilicon...

  14. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOE Patents [OSTI]

    Brun, Milivoj Konstantin (Ballston Lake, NY); Luthra, Krishan Lal (Niskayuna, NY)

    2003-01-01

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  15. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  16. TBEA Xinjiang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Xinjiang Autonomous Region, China Product: A JV formed to develop a 1500t polysilicon manufacturing plant. References: TBEA Xinjiang Silicon Material Co Ltd1 This article is...

  17. Asia Silicon Qinghai Co Ltd aka Asia Si Material | Open Energy...

    Open Energy Info (EERE)

    Silicon Qinghai Co Ltd aka Asia Si Material Jump to: navigation, search Name: Asia Silicon (Qinghai) Co Ltd (aka Asia Si Material) Place: Xining, Qinghai Province, China Zip:...

  18. Holey Silicon as an Efficient Thermoelectric Material

    SciTech Connect (OSTI)

    Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

    2010-09-30

    This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

  19. Bagdad Plant Raymond J. Polinski 585 Silicon Drive General Manager

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Bagdad Plant Raymond J. Polinski 585 Silicon Drive General Manager Leechburg, PA 15656 Grain-Oriented Electrical Steel e-mail: Raymond.Polinski@ATImetals.com E. Below are Allegheny Technologies Incorporated's comments on certain issues in which the DOE sought comment. 17. DOE seeks comment on nanotechnology composites and their potential for use in distribution transformers. Soft magnetic and amorphous particles with excellent magnetic properties can be and are currently produced, but the

  20. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  1. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  2. Porous silicon based anode material formed using metal reduction

    DOE Patents [OSTI]

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  3. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect (OSTI)

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  4. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  5. Recent Progress in Silicon-based Spintronic Materials (Book) | SciTech

    Office of Scientific and Technical Information (OSTI)

    Connect Book: Recent Progress in Silicon-based Spintronic Materials Citation Details In-Document Search Title: Recent Progress in Silicon-based Spintronic Materials Authors: Damewood, L ; Fong, C Y ; Yang, L H Publication Date: 2014-08-28 OSTI Identifier: 1184732 Report Number(s): LLNL-BOOK-659524 DOE Contract Number: DE-AC52-07NA27344 Resource Type: Book Publisher: Recent Progress in Silicon-based Spintronic Materials, World Scientific Publishing, Singapore, 2015, pp. 164 Research Org:

  6. NREL: Photovoltaics Research - Silicon Materials and Devices R&D

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicon Materials and Devices R&D R&D 100 Awards Since 2010, we have won three R&D 100 Awards. Flash Quantum Efficiency (Flash QE) System for Solar Cells Innovalight Silicon Ink Process Low-Cost Black Silicon Etching Process Graphic of three layers. The bottom layer, called inexpensive substrate, is white. Middle dark blue layer is called the seed. Top light blue layer has the text epi c-Si absorber. Schematic diagram of the film crystal silicon solar cell. A high-quality crystal

  7. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1, 4/9/13) Exhibit A General Conditions Page 1 of 32 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT

  8. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2, 6/14/13) Exhibit A General Conditions Page 1 of 20 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2012) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT

  9. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5, 3/6/15) Exhibit A General Conditions Page 1 of 23 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2014) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT

  10. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4, 9/26/14) Exhibit A General Conditions Page 1 of 22 EXHIBIT "A" GENERAL CONDITIONS TABLE OF CONTENTS GC Title Page GC-1 DEFINITIONS (Aug 2014) .......................................................................................................... 3 GC-2A AUTHORIZED REPRESENTATIVES, COMMUNICATIONS AND NOTICES (Jan 2010) ........................................................................................................................................... 3 GC-3 INDEPENDENT

  11. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    SciTech Connect (OSTI)

    Benavides, Pahola T.; Dai, Qiang; Sullivan, John L.; Kelly, Jarod C.; Dunn, Jennifer B.

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  12. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

    DOE Patents [OSTI]

    Habermehl, Scott D. (Corrales, NM); Sniegowski, Jeffry J. (Edgewood, NM)

    2001-01-01

    The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

  13. Method of making silicon on insalator material using oxygen implantation

    DOE Patents [OSTI]

    Hite, Larry R.; Houston, Ted; Matloubian, Mishel

    1989-01-01

    The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

  14. Structural silicon nitride materials containing rare earth oxides

    DOE Patents [OSTI]

    Andersson, Clarence A.

    1980-01-01

    A ceramic composition suitable for use as a high-temperature structural material, particularly for use in apparatus exposed to oxidizing atmospheres at temperatures of 400 to 1600.degree. C., is found within the triangular area ABCA of the Si.sub.3 N.sub.4 --SiO.sub.2 --M.sub.2 O.sub.3 ternary diagram depicted in FIG. 1. M is selected from the group of Yb, Dy, Er, Sc, and alloys having Yb, Y, Er, or Dy as one component and Sc, Al, Cr, Ti, (Mg +Zr) or (Ni+Zr) as a second component, said alloy having an effective ionic radius less than 0.89 A.

  15. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  16. Microstructure of amorphous-silicon-based solar cell materials by small-angle x-ray scattering. Annual subcontract report, 6 April 1994--5 April 1995

    SciTech Connect (OSTI)

    Williamson, D.L.

    1995-08-01

    The general objective of this research is to provide detailed microstructural information on the amorphous-silicon-based, thin-film materials under development for improved multijunction solar cells. The experimental technique used is small-angle x-ray scattering (SAXS) providing microstructural data on microvoid fractions, sizes, shapes, and their preferred orientations. Other microstructural features such as alloy segregation, hydrogen-rich clusters and alloy short-range order are probed.

  17. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    DOE Patents [OSTI]

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  18. Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

    SciTech Connect (OSTI)

    Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

    1998-12-08

    This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

  19. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  20. Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

    1999-11-23

    This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

  1. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    SciTech Connect (OSTI)

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled to effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.

  2. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore » effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

  3. Center for Nanophase Materials Sciences (CNMS) - General Characterization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Facilities GENERAL CHARACTERIZATION FACILITIES Neutron Scattering CNMS users are encouraged to take advantage of the world-class neutron scattering facilities that are available at ORNL's High-Flux Isotope Reactor (HFIR) and the Spallation Neutron Source (SNS). Beamlines of particular relevance to CNMS Scientific Themes include the small-angle scattering and diffractometry instruments on the HFIR cold source, HFIR thermal neutron diffraction and spectroscopy capabilities, and

  4. 14th Workshop on Crystalline Silicon Solar Cells& Modules: Materials and Processes; Summary of Discussion Sessions

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Sinton, R.; Swanson, D.

    2004-10-01

    The 14th Workshop discussion sessions addressed funding needs for Si research and for R&D to enhance U.S. PV manufacturing. The wrap-up session specifically addressed topics for the new university silicon program. The theme of the workshop, Crystalline Silicon Solar Cells: Leapfrogging the Barriers, was selected to reflect the astounding progress in Si PV technology during last three decades, despite a host of barriers and bottlenecks. A combination of oral, poster, and discussion sessions addressed recent advances in crystal growth technology, new cell structures and doping methods, silicon feedstock issues, hydrogen passivation and fire through metallization, and module issues/reliability. The following oral/discussion sessions were conducted: (1) Technology Update; (2) Defects and Impurities in Si/Discussion; (3) Rump Session; (4) Module Issues and Reliability/Discussion; (5) Silicon Feedstock/Discussion; (6) Novel Doping, Cells, and Hetero-Structure Designs/Discussion; (7) Metallization/Silicon Nitride Processing/Discussion; (8) Hydrogen Passivation/Discussion; (9) Characterization/Discussion; and (10) Wrap-Up. This year's workshop lasted three and a half days and, for the first time, included a session on Si modules. A rump session was held on the evening of August 8, which addressed efficiency expectations and challenges of c Si solar cells/modules. Richard King of DOE and Daren Dance of Wright Williams& Kelly (formerly of Sematech) spoke at two of the luncheon sessions. Eleven students received Graduate Student Awards from funds contributed by the PV industry.

  5. Silicon Tracker Design for the ILC (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: Silicon Tracker Design for the ILC Citation Details In-Document Search Title: Silicon Tracker Design for the ILC The task of tracking charged particles in energy frontier collider experiments has been largely taken over by solid-state detectors. While silicon microstrip trackers offer many advantages in this environment, large silicon trackers are generally much more massive than their gaseous counterparts. Because of the properties of the machine itself, much of the material that

  6. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  7. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  8. Generalized Procedure for Improved Accuracy of Thermal Contact Resistance Measurements for Materials With Arbitrary Temperature-Dependent Thermal Conductivity

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sayer, Robert A.

    2014-06-26

    Thermal contact resistance (TCR) is most commonly measured using one-dimensional steady-state calorimetric techniques. In the experimental methods we utilized, a temperature gradient is applied across two contacting beams and the temperature drop at the interface is inferred from the temperature profiles of the rods that are measured at discrete points. During data analysis, thermal conductivity of the beams is typically taken to be an average value over the temperature range imposed during the experiment. Our generalized theory is presented and accounts for temperature-dependent changes in thermal conductivity. The procedure presented enables accurate measurement of TCR for contacting materials whose thermalmore » conductivity is any arbitrary function of temperature. For example, it is shown that the standard technique yields TCR values that are about 15% below the actual value for two specific examples of copper and silicon contacts. Conversely, the generalized technique predicts TCR values that are within 1% of the actual value. The method is exact when thermal conductivity is known exactly and no other errors are introduced to the system.« less

  9. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  10. The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials

    SciTech Connect (OSTI)

    Chen, Jian Huang, Zhengren; Chen, Zhongming; Yuan, Ming; Liu, Yan; Zhu, Yunzhou

    2014-03-01

    The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The results show that C can restrain the growth of SiC grains and densify SiC ceramics with the increase of the C content, but residual C introduces a new phase-C to SiC ceramics. The hardness of C is less than that of SiC, so it's difficult to be polished as optical materials. The existence of C phase doesn't lead to the increase of surface roughness on SiC optical materials, but it leads to the decrease of the reflectance of SiC as the optical materials because the optical absorption of C in visible light is stronger than that of SiC. It indicates that C content is very important to the surface properties of SiC, which will affect the coating of chemical vapor deposition SiC or Si on the surface of SiC ceramics because of the different physical and chemical properties between C and SiC. - Highlights: • The microstructure and the distribution of carbon were investigated. • A new phase in the optical materials is introduced. • It is difficult to be polished as the optical materials because of different phases. • Carbon leads to the decrease of reflectance because of its absorption to light wave. • The different properties may affect the coating of chemical vapor deposition on SiC.

  11. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    SciTech Connect (OSTI)

    1998-08-01

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  12. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  13. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  14. Modeling the Process of Mining Silicon Through a Single Displacement/Redox Reaction

    K-12 Energy Lesson Plans and Activities Web site (EERE)

    As the popularity of photovoltaic (PV) cells and integrated circuits (IC) increases, the need for silicon also increases. Silicon is one of the most used materials in these two industries. It is an inexpensive and abundant semiconductor. However, the process of producing pure silicon adds cost, and it is generally unknown to the public. One of the first steps in producing silicon is a process called carbon-thermic reduction. Silicon dioxide (SiO2) that is found in beach sand and quartz is melted down in a caldron at a temperature of 1450 degrees Celsius.

  15. Assessment of the US regulations for fissile exemptions and fissile material general licenses

    SciTech Connect (OSTI)

    Parks, C.V.; Hopper, C.M.; Lichtenwalter, J.J. [Oak Ridge National Lab., TN (United States); Easton, E.P.; Brochman, P.G. [NRC, Washington, DC (United States)

    1997-05-01

    The paragraphs for general licenses for fissile material and exemptions (often termed exceptions in the international community) for fissile material have long been a part of the US Code of Federal Regulations (CFR) 10 CFR Part 71, Packaging and Transportation of Radioactive Material. More recently, the Nuclear Regulatory Commission (NRC) issued a final rule on Part 71 via emergency rule-making procedures in order to address an identified deficiency related to one of the fissile exemptions. To address the specified deficiency in a general fashion, the emergency rule adopted the approach of the 1996 Edition of the IAEA: Regulations for the Safe Transport of Radioactive Material (IAEA 1996), which places restrictions on certain moderating materials and limits the quantity of fissile material in a consignment. The public comments received by the NRC indicated general agreement with the need for restrictions on certain moderators (beryllium, deuterium, and graphite). The comments indicated concern relative to both the degree of restriction imposed (not more than 0.1% of fissile material mass) and the need to limit the fissile material mass of the consignment, particularly in light of the subsequent NRC staff position that the true intent was to provide control for limiting the fissile mass of the conveyance. The purpose of the review is to identify potential deficiencies that might be adverse to maintaining adequate subcriticality under normal conditions of transport and hypothetical accident conditions. In addition, ORNL has been asked to identify changes that would address any identified safety issues, enable inherently safe packages to continue to be unencumbered in transport, and seek to minimize the impact on current safe practices.

  16. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2006-12-05

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  18. Photovoltaic Silicon Cell Basics | Department of Energy

    Energy Savers [EERE]

    Silicon Cell Basics Photovoltaic Silicon Cell Basics August 20, 2013 - 2:19pm Addthis Silicon-used to make some the earliest photovoltaic (PV) devices-is still the most popular material for solar cells. Silicon is also the second-most abundant element in the Earth's crust (after oxygen). However, to be useful as a semiconductor material in solar cells, silicon must be refined to a purity of 99.9999%. In single-crystal silicon, the molecular structure-which is the arrangement of atoms in the

  19. Six Thousand Electrochemical Cycles of Double-Walled Silicon Nanotube Anodes for Lithium Ion Batteries

    SciTech Connect (OSTI)

    Wu, H

    2011-08-18

    Despite remarkable progress, lithium ion batteries still need higher energy density and better cycle life for consumer electronics, electric drive vehicles and large-scale renewable energy storage applications. Silicon has recently been explored as a promising anode material for high energy batteries; however, attaining long cycle life remains a significant challenge due to materials pulverization during cycling and an unstable solid-electrolyte interphase. Here, we report double-walled silicon nanotube electrodes that can cycle over 6000 times while retaining more than 85% of the initial capacity. This excellent performance is due to the unique double-walled structure in which the outer silicon oxide wall confines the inner silicon wall to expand only inward during lithiation, resulting in a stable solid-electrolyte interphase. This structural concept is general and could be extended to other battery materials that undergo large volume changes.

  20. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  1. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W.

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  2. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  3. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  4. Crystallization Behavior of Virgin TR-55 Silicone Rubber Measured...

    Office of Scientific and Technical Information (OSTI)

    Language: English Subject: 36 MATERIALS SCIENCE; CRYSTALLIZATION; GEOMETRY; HEATING; MELTING; NITROGEN; RUBBERS; SILICONES; STORAGE; STRAINS; THERMAL ANALYSIS; THERMAL EXPANSION; ...

  5. Synthesis and tribological behavior of silicon oxycarbonitride...

    Office of Scientific and Technical Information (OSTI)

    Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; SILICON COMPOUNDS; SYNTHESIS; THIN FILMS; OXYCARBIDES; NITRIDES; TRIBOLOGY Word Cloud More ...

  6. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  7. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  8. Process for strengthening silicon based ceramics

    DOE Patents [OSTI]

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-04-06

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  9. Process for strengthening silicon based ceramics

    DOE Patents [OSTI]

    Kim, Hyoun-Ee (Oak Ridge, TN); Moorhead, A. J. (Knoxville, TN)

    1993-01-01

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  10. Silicon on insulator self-aligned transistors

    DOE Patents [OSTI]

    McCarthy, Anthony M.

    2003-11-18

    A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

  11. Silicon carbide fibers and articles including same

    DOE Patents [OSTI]

    Garnier, John E; Griffith, George W

    2015-01-27

    Methods of producing silicon carbide fibers. The method comprises reacting a continuous carbon fiber material and a silicon-containing gas in a reaction chamber at a temperature ranging from approximately 1500.degree. C. to approximately 2000.degree. C. A partial pressure of oxygen in the reaction chamber is maintained at less than approximately 1.01.times.10.sup.2 Pascal to produce continuous alpha silicon carbide fibers. Continuous alpha silicon carbide fibers and articles formed from the continuous alpha silicon carbide fibers are also disclosed.

  12. Crystalline Silicon Photovolatic Cell Basics | Department of Energy

    Office of Environmental Management (EM)

    Crystalline Silicon Photovolatic Cell Basics Crystalline Silicon Photovolatic Cell Basics August 19, 2013 - 4:58pm Addthis Crystalline silicon cells are made of silicon atoms connected to one another to form a crystal lattice. This lattice comprises the solid material that forms the photovoltaic (PV) cell's semiconductors. This section describes the atomic structure and bandgap energy of these cells. Atomic Structure Illustration of a silicon crystal with its 14 electrons orbiting a nucleus of

  13. General volume sizing strategy for thermal storage system using phase change material for concentrated solar thermal power plant

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, Ben; Li, Peiwen; Chan, Cholik; Tumilowicz, Eric

    2014-12-18

    With an auxiliary large capacity thermal storage using phase change material (PCM), Concentrated Solar Power (CSP) is a promising technology for high efficiency solar energy utilization. In a thermal storage system, a dual-media thermal storage tank is typically adopted in industry for the purpose of reducing the use of the heat transfer fluid (HTF) which is usually expensive. While the sensible heat storage system (SHSS) has been well studied, a dual-media latent heat storage system (LHSS) still needs more attention and study. The volume sizing of the thermal storage tank, considering daily cyclic operations, is of particular significance. In thismore » paper, a general volume sizing strategy for LHSS is proposed, based on an enthalpy-based 1D transient model. One example was presented to demonstrate how to apply this strategy to obtain an actual storage tank volume. With this volume, a LHSS can supply heat to a thermal power plant with the HTF at temperatures above a cutoff point during a desired 6 hours of operation. This general volume sizing strategy is believed to be of particular interest for the solar thermal power industry.« less

  14. General volume sizing strategy for thermal storage system using phase change material for concentrated solar thermal power plant

    SciTech Connect (OSTI)

    Xu, Ben; Li, Peiwen; Chan, Cholik; Tumilowicz, Eric

    2014-12-18

    With an auxiliary large capacity thermal storage using phase change material (PCM), Concentrated Solar Power (CSP) is a promising technology for high efficiency solar energy utilization. In a thermal storage system, a dual-media thermal storage tank is typically adopted in industry for the purpose of reducing the use of the heat transfer fluid (HTF) which is usually expensive. While the sensible heat storage system (SHSS) has been well studied, a dual-media latent heat storage system (LHSS) still needs more attention and study. The volume sizing of the thermal storage tank, considering daily cyclic operations, is of particular significance. In this paper, a general volume sizing strategy for LHSS is proposed, based on an enthalpy-based 1D transient model. One example was presented to demonstrate how to apply this strategy to obtain an actual storage tank volume. With this volume, a LHSS can supply heat to a thermal power plant with the HTF at temperatures above a cutoff point during a desired 6 hours of operation. This general volume sizing strategy is believed to be of particular interest for the solar thermal power industry.

  15. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the Workshop, Copper Mountain Resort; August 14-16, 2000

    SciTech Connect (OSTI)

    Sopori, B.L.; Gee, J.; Kalejs, J.; Saitoh, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.

    2000-08-11

    The 10th Workshop provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions included the various aspects of impurities and defects in silicon-their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions also reviewed thin-film crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing requirements to meet the ambitious expansion goals described in the recently released US PV Industry Roadmap. The Workshop also provided an excellent opportunity for researchers in private industry and at universities to recognize a mutual need for future collaborative research. The three-day workshop consisted of presentations by invited speakers, followed by discussion sessions. In addition, there was two poster sessions presenting the latest research and development results. The subjects discussed included: solar cell processing, light-induced degradation, gettering and passivation, crystalline silicon growth, thin-film silicon solar cells, and impurities and defects. Two special sessions featured at this workshop: advanced metallization and interconnections, and characterization methods.

  16. Preliminary materials assessment for the Satellite Power System (SPS)

    SciTech Connect (OSTI)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  17. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  18. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  19. Purification and deposition of silicon by an iodide disproportionation reaction

    DOE Patents [OSTI]

    Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

    2002-01-01

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  20. Role of point defects/defect complexes in silicon device processing. Book of abstracts, fourth workshop

    SciTech Connect (OSTI)

    Not Available

    1994-06-01

    The 41 abstracts are arranged into 6 sessions: impurities and defects in commercial substrates: their sources, effects on material yield, and material quality; impurity gettering in silicon: limits and manufacturability of impurity gettering and in silicon solar cells; impurity/defect passivation; new concepts in silicon growth: improved initial quality and thin films; and silicon solar cell design opportunities.

  1. Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Materials Access to Hopper Phase II (Cray XE6) If you are a current NERSC user, you are enabled to use Hopper Phase II. Use your SSH client to connect to Hopper II:...

  2. 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Extended Abstracts and Papers, 19-22 August 2001, Estes Park, Colorado

    SciTech Connect (OSTI)

    Sopori, B.

    2001-08-16

    The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.

  3. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L.

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  4. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  5. Production of high specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1994-01-01

    A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  6. Silica substrate or portion formed from oxidation of monocrystalline silicon

    DOE Patents [OSTI]

    Matzke, Carolyn M.; Rieger, Dennis J.; Ellis, Robert V.

    2003-07-15

    A method is disclosed for forming an inclusion-free silica substrate using a monocrystalline silicon substrate as the starting material and oxidizing the silicon substrate to convert it entirely to silica. The oxidation process is performed from both major surfaces of the silicon substrate using a conventional high-pressure oxidation system. The resulting product is an amorphous silica substrate which is expected to have superior etching characteristics for microfabrication than conventional fused silica substrates. The present invention can also be used to convert only a portion of a monocrystalline silicon substrate to silica by masking the silicon substrate and locally thinning a portion the silicon substrate prior to converting the silicon portion entirely to silica. In this case, the silica formed by oxidizing the thinned portion of the silicon substrate can be used, for example, as a window to provide optical access through the silicon substrate.

  7. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  8. Unique Quantum Effect Found in Silicon Nanocrystals - News Releases | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unique Quantum Effect Found in Silicon Nanocrystals Quantum Dot Materials May Improve Efficiency of Silicon Solar Cells July 24, 2007 Researchers at the U.S. Department of Energy's National Renewable Energy Laboratory (NREL), collaborating with Innovalight, Inc., have shown that a new and important effect called Multiple Exciton Generation (MEG) occurs efficiently in silicon nanocrystals. MEG results in the formation of more than one electron per absorbed photon. Silicon is the dominant

  9. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of removing-silicon (and germanium) nanostructures at precise wafer locations. This strategy holds the potential for fabricating transistors in fewer steps with less material...

  10. The Silicon Mine | Open Energy Information

    Open Energy Info (EERE)

    produce solar grade polysilicon suitable for the production of wafers or as the base material for the manufacture of solar cells. References: The Silicon Mine1 This article is a...

  11. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers, August 11-14, 2002, Breckenridge, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2002-08-01

    The 12th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. Discussions will include various aspects of impurities and defects in silicon-their properties, the dynamics during processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the production demands of the future. It will also provide an excellent opportunity for researchers, in private industry and at universities, to prioritize mutual needs for future collaborative research. Sessions and panel discussions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and manufacturing approaches suitable for future manufacturing demands . Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results.

  12. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  13. Microscopic theory of thermoelectric properties of silicon nanowires

    SciTech Connect (OSTI)

    Vo, T; Williamson, A; Lordi, V; Galli, G

    2007-06-14

    We present predictions of the thermoelectric figure of merit (ZT) of Si nanowires, as obtained using Boltzman transport equation and ab-initio electronic structure calculations. We find that ZT is strongly dependent on the nanowire growth direction and surface reconstruction and we discuss general rules to select silicon based nanostructures with combined n-type and p-type optimal ZT. In particular, our calculations indicate that 1 nm wires grown in the [001] and [011] directions can attain ZT values which are about twice as high as those of ordinary thermoelectric materials.

  14. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  15. Henan Xindaxin Materials XDXM | Open Energy Information

    Open Energy Info (EERE)

    Xindaxin Materials (XDXM) Place: Henan Province, China Zip: 475000 Product: Chinese material manufacturer produces micropowder for crystalline silicon and semiconductor wafer...

  16. MEMC Electronic Materials Inc | Open Energy Information

    Open Energy Info (EERE)

    MEMC Electronic Materials Inc Jump to: navigation, search Name: MEMC Electronic Materials Inc Place: St. Peters, Missouri Zip: 63376 Product: US-based manufacturer of silicon-based...

  17. Selective etching of silicon carbide films

    DOE Patents [OSTI]

    Gao, Di; Howe, Roger T.; Maboudian, Roya

    2006-12-19

    A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

  18. Process for producing silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Carleton, Karen L. (Boulder, CO)

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  19. Process for producing silicon

    DOE Patents [OSTI]

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  20. Electrodeposition of molten silicon

    DOE Patents [OSTI]

    De Mattei, Robert C. (Sunnyvale, CA); Elwell, Dennis (Palo Alto, CA); Feigelson, Robert S. (Saratoga, CA)

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  1. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  2. Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

    DOE Patents [OSTI]

    Branagan, Daniel J. (Idaho Falls, ID); Hyde, Timothy A. (Idaho Falls, ID); Fincke, James R. (Los Alamos, NM)

    2008-03-11

    The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

  3. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  4. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Direct-Write of Silicon and Germanium Nanostructures Direct-Write of Silicon and Germanium Nanostructures Print Wednesday, 29 June 2011 00:00 Nanostructured materials (nanowires, nanotubes, nanoclusters, graphene) are attractive possible alternatives to traditionally microfabricated silicon in continuing the miniaturization trend in the electronics industry. To go from nanomaterials to electronics, however, the precise one-by-one assembly of billions of nanoelements into a functioning circuit is

  5. Bench-Scale Silicone Process for Low-Cost CO{sub 2} Capture. Manufacturing Plan for Aminosilicone-based CO{sub 2} Absorption Material

    SciTech Connect (OSTI)

    Vogt, Kirkland

    2013-02-01

    A commercially cost effective manufacturing plan was developed for GAP-1m, the aminosilicone-based part of the CO{sub 2} capture solvent described in DE-FE0007502, and the small-scale synthesis of GAP-1m was confirmed. The plan utilizes a current intermediate at SiVance LLC to supply the 2013-2015 needs for GE Global Research. Material from this process was supplied to GE Global Research for evaluation and creation of specifications. GE Global Research has since ordered larger quantities (60 liters) for the larger scale evaluations that start in first quarter, 2013. For GE’s much larger future commercial needs, an improved, more economical pathway to make the product was developed after significant laboratory and literature research. Suppliers were identified for all raw materials.

  6. Silicon purification melting for photovoltaic applications

    SciTech Connect (OSTI)

    VAN DEN AVYLE,JAMES A.; HO,PAULINE; GEE,JAMES M.

    2000-04-01

    The availability of polysilicon feedstock has become a major issue for the photovoltaic (PV) industry in recent years. Most of the current polysilicon feedstock is derived from rejected material from the semiconductor industry. However, the reject material can become scarce and more expensive during periods of expansion in the integrated-circuit industry. Continued rapid expansion of the PV crystalline-silicon industry will eventually require a dedicated supply of polysilicon feedstock to produce solar cells at lower costs. The photovoltaic industry can accept a lower purity polysilicon feedstock (solar-grade) compared to the semiconductor industry. The purity requirements and potential production techniques for solar-grade polysilicon have been reviewed. One interesting process from previous research involves reactive gas blowing of the molten silicon charge. As an example, Dosaj et all reported a reduction of metal and boron impurities from silicon melts using reactive gas blowing with 0{sub 2} and Cl{sub 2}. The same authors later reassessed their data and the literature, and concluded that Cl{sub 2}and 0{sub 2}/Cl{sub 2} gas blowing are only effective for removing Al, Ca, and Mg from the silicon melt. Researchers from Kawasaki Steel Corp. reported removal of B and C from silicon melts using reactive gas blowing with an 0{sub 2}/Ar plasma torch. Processes that purify the silicon melt are believed to be potentially much lower cost compared to present production methods that purify gas species.

  7. Lithium ion batteries based on nanoporous silicon

    DOE Patents [OSTI]

    Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

    2015-09-22

    A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

  8. Silicon micro-mold

    DOE Patents [OSTI]

    Morales, Alfredo M. (Livermore, CA)

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  9. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOE Patents [OSTI]

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  10. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  11. Thermally Oxidized Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    4 Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the

  12. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  13. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  14. Patent: Microelectromechanical pump utilizing porous silicon...

    Office of Scientific and Technical Information (OSTI)

    pump utilizing porous silicon Citation Details Title: Microelectromechanical pump utilizing porous silicon

  15. The effect of carbon on surface quality of solid-state-sintered silicon

    Office of Scientific and Technical Information (OSTI)

    carbide as optical materials (Journal Article) | SciTech Connect The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials Citation Details In-Document Search Title: The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The

  16. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  17. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1982-01-01

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

  18. Synthesis and study of novel silicon-based unsaturated polymers

    SciTech Connect (OSTI)

    Lin, J.

    1995-06-19

    Novel unsaturated polymers have been synthesized and studied as precursors to silicon carbide and third order nonlinear optical materials. X ray structures were obtained. Kinetic and mechanistic studies of the unique thermal isomerization of dimethylenedisilacyclobutane to a carbene were conducted.

  19. Polymer mold makes perfect silicon nanostructures > EMC2 News...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    made such a mold for nanostructures that can shape liquid silicon out of an organic polymer material. This paves the way for perfect, 3-D, single crystal nanostructures. The...

  20. Silicone-containing composition

    DOE Patents [OSTI]

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  1. Preparation of silicon carbide fibers

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  2. NREL: Photovoltaics Research - Polycrystalline Thin-Film Materials...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in the area of polycrystalline thin-film materials and devices. Printable Version Photovoltaics Research Home Silicon Polycrystalline Thin Films Multijunctions New Materials,...

  3. Guizhou New Material Dev Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Guizhou New Material Dev Co Ltd Jump to: navigation, search Name: Guizhou New Material Dev. Co Ltd Place: Guiyang, China Zip: 550018 Sector: Solar Product: Chinese silicon carbide...

  4. Vehicle Technologies Office Merit Review 2014: Novel Anode Materials...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Materials Vehicle Technologies Office Merit Review 2015: First Principles Modeling of SEI Formation on Bare and SurfaceAdditive Modified Silicon Anodes Novel Anode Materials

  5. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  6. Applied Materials Inc AMAT | Open Energy Information

    Open Energy Info (EERE)

    manufacturer of equipment used in solar (silicon, thin-film, BIPV), semiconductor, and LCD markets. References: Applied Materials Inc (AMAT)1 This article is a stub. You can...

  7. Method and structure for passivating semiconductor material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ)

    1981-01-01

    A structure for passivating semiconductor material comprises a substrate of crystalline semiconductor material, a relatively thin film of carbon disposed on a surface of the crystalline material, and a layer of hydrogenated amorphous silicon deposited on the carbon film.

  8. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  9. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  10. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P.

    1996-09-01

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  11. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space; Salama, Amal M.

    1982-01-01

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  12. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  13. Method of fabrication of display pixels driven by silicon thin film transistors

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

    1999-01-01

    Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

  14. Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012)

    Office of Environmental Management (EM)

    Silicon Carbide Technology Breakthrough Silicon carbide (SiC) is a semiconductor material under rapid development for use in power electronic (PE) systems due to its unique material and electronic properties. SiC potentially offers several advantages over conventional silicon (Si) for use in PE devices. Comparatively, individual SiC devices (in theory) can endure temperatures up to 600°C (standard Si PE devices are typically limited to 150°C), withstand more voltage, tolerate a larger current

  15. Tangshan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    search Name: Tangshan Silicon Co Ltd Place: Tangshan, Hebei Province, China Product: Chinese silicon producer developing a 1000t silicon plant in Tangshan, Hebei Province. It has...

  16. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Information JLF Contacts Request a Tour

  17. Photovoltaic Materials

    SciTech Connect (OSTI)

    Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

    2012-10-15

    The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

  18. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    SciTech Connect (OSTI)

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ?100??s or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1??m of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461??s. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  19. Enhanced densification under shock compression in porous silicon

    SciTech Connect (OSTI)

    Lane, J. Matthew; Thompson, Aidan Patrick; Vogler, Tracy

    2014-10-27

    Under shock compression, most porous materials exhibit lower densities for a given pressure than that of a full-dense sample of the same material. However, some porous materials exhibit an anomalous, or enhanced, densification under shock compression. The mechanism driving this behavior was not completely determined. We present evidence from atomistic simulation that pure silicon belongs to this anomalous class of materials and demonstrate the associated mechanisms responsible for the effect in porous silicon. Atomistic response indicates that local shear strain in the neighborhood of collapsing pores catalyzes a local solid-solid phase transformation even when bulk pressures are below the thermodynamic phase transformation pressure. This metastable, local, and partial, solid-solid phase transformation, which accounts for the enhanced densification in silicon, is driven by the local stress state near the void, not equilibrium thermodynamics. This mechanism may also explain the phenomenon in other covalently bonded materials.

  20. Enhanced densification under shock compression in porous silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lane, J. Matthew; Thompson, Aidan Patrick; Vogler, Tracy

    2014-10-27

    Under shock compression, most porous materials exhibit lower densities for a given pressure than that of a full-dense sample of the same material. However, some porous materials exhibit an anomalous, or enhanced, densification under shock compression. The mechanism driving this behavior was not completely determined. We present evidence from atomistic simulation that pure silicon belongs to this anomalous class of materials and demonstrate the associated mechanisms responsible for the effect in porous silicon. Atomistic response indicates that local shear strain in the neighborhood of collapsing pores catalyzes a local solid-solid phase transformation even when bulk pressures are below the thermodynamicmore » phase transformation pressure. This metastable, local, and partial, solid-solid phase transformation, which accounts for the enhanced densification in silicon, is driven by the local stress state near the void, not equilibrium thermodynamics. This mechanism may also explain the phenomenon in other covalently bonded materials.« less

  1. Materials Videos

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Videos Materials

  2. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M.A.; Mariella, R.P. Jr.; Carrano, A.V.; Balch, J.W.

    1996-12-31

    A silicon-based sleeve type chemical reaction chamber is described that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis. 32 figs.

  3. Direct-patterned optical waveguides on amorphous silicon films

    DOE Patents [OSTI]

    Vernon, Steve; Bond, Tiziana C.; Bond, Steven W.; Pocha, Michael D.; Hau-Riege, Stefan

    2005-08-02

    An optical waveguide structure is formed by embedding a core material within a medium of lower refractive index, i.e. the cladding. The optical index of refraction of amorphous silicon (a-Si) and polycrystalline silicon (p-Si), in the wavelength range between about 1.2 and about 1.6 micrometers, differ by up to about 20%, with the amorphous phase having the larger index. Spatially selective laser crystallization of amorphous silicon provides a mechanism for controlling the spatial variation of the refractive index and for surrounding the amorphous regions with crystalline material. In cases where an amorphous silicon film is interposed between layers of low refractive index, for example, a structure comprised of a SiO.sub.2 substrate, a Si film and an SiO.sub.2 film, the formation of guided wave structures is particularly simple.

  4. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Mariella, Jr., Raymond P. (Danville, CA); Carrano, Anthony V. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    1996-01-01

    A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

  5. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  6. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  7. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

    1994-01-01

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

  8. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO)

    1988-01-01

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  9. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    SciTech Connect (OSTI)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H.; Kim, K.

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  10. Fluoroethylene carbonate and %22silicon oxide%22 on silicon anodes:

    Office of Scientific and Technical Information (OSTI)

    modeling SEI reaction mechanisms. (Conference) | SciTech Connect Fluoroethylene carbonate and %22silicon oxide%22 on silicon anodes: modeling SEI reaction mechanisms. Citation Details In-Document Search Title: Fluoroethylene carbonate and %22silicon oxide%22 on silicon anodes: modeling SEI reaction mechanisms. Abstract not provided. Authors: Leung, Kevin Publication Date: 2013-05-01 OSTI Identifier: 1115631 Report Number(s): SAND2013-3743C 479901 DOE Contract Number: AC04-94AL85000 Resource

  11. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide Nanocomposites for Drill Bits Ultratough, Thermally Stable Polycrystalline DiamondSilicon Carbide ...

  12. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Direct-Write of Silicon and Germanium Nanostructures Print Nanostructured materials (nanowires, nanotubes, nanoclusters, graphene) are attractive possible alternatives to traditionally microfabricated silicon in continuing the miniaturization trend in the electronics industry. To go from nanomaterials to electronics, however, the precise one-by-one assembly of billions of nanoelements into a functioning circuit is required-clearly not a simple task. An interdisciplinary team from the University

  13. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Direct-Write of Silicon and Germanium Nanostructures Print Nanostructured materials (nanowires, nanotubes, nanoclusters, graphene) are attractive possible alternatives to traditionally microfabricated silicon in continuing the miniaturization trend in the electronics industry. To go from nanomaterials to electronics, however, the precise one-by-one assembly of billions of nanoelements into a functioning circuit is required-clearly not a simple task. An interdisciplinary team from the University

  14. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Direct-Write of Silicon and Germanium Nanostructures Print Nanostructured materials (nanowires, nanotubes, nanoclusters, graphene) are attractive possible alternatives to traditionally microfabricated silicon in continuing the miniaturization trend in the electronics industry. To go from nanomaterials to electronics, however, the precise one-by-one assembly of billions of nanoelements into a functioning circuit is required-clearly not a simple task. An interdisciplinary team from the University

  15. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Direct-Write of Silicon and Germanium Nanostructures Print Nanostructured materials (nanowires, nanotubes, nanoclusters, graphene) are attractive possible alternatives to traditionally microfabricated silicon in continuing the miniaturization trend in the electronics industry. To go from nanomaterials to electronics, however, the precise one-by-one assembly of billions of nanoelements into a functioning circuit is required-clearly not a simple task. An interdisciplinary team from the University

  16. Silicon Cells | Open Energy Information

    Open Energy Info (EERE)

    a low cost method of processing silicon to produce a new generation of high energy density batteries. References: Silicon Cells1 This article is a stub. You can help OpenEI...

  17. Hardfacing material

    DOE Patents [OSTI]

    Branagan, Daniel J. (Iona, ID)

    2012-01-17

    A method of producing a hard metallic material by forming a mixture containing at least 55% iron and at least one of boron, carbon, silicon and phosphorus. The mixture is formed into an alloy and cooled to form a metallic material having a hardness of greater than about 9.2 GPa. The invention includes a method of forming a wire by combining a metal strip and a powder. The metal strip and the powder are rolled to form a wire containing at least 55% iron and from two to seven additional elements including at least one of C, Si and B. The invention also includes a method of forming a hardened surface on a substrate by processing a solid mass to form a powder, applying the powder to a surface to form a layer containing metallic glass, and converting the glass to a crystalline material having a nanocrystalline grain size.

  18. General Reactive Atomistic Simulation Program

    Energy Science and Technology Software Center (OSTI)

    2004-09-22

    GRASP (General Reactive Atomistic Simulation Program) is primarily intended as a molecular dynamics package for complex force fields, The code is designed to provide good performance for large systems, either in parallel or serial execution mode, The primary purpose of the code is to realistically represent the structural and dynamic properties of large number of atoms on timescales ranging from picoseconds up to a microsecond. Typically the atoms form a representative sample of some material,more » such as an interface between polycrystalline silicon and amorphous silica. GRASP differs from other parallel molecular dynamics codes primarily due to it’s ability to handle relatively complicated interaction potentials and it’s ability to use more than one interaction potential in a single simulation. Most of the computational effort goes into the calculation of interatomic forces, which depend in a complicated way on the positions of all the atoms. The forces are used to integrate the equations of motion forward in time using the so-called velocity Verlet integration scheme. Alternatively, the forces can be used to find a minimum energy configuration, in which case a modified steepest descent algorithm is used.« less

  19. High capacity anode materials for lithium ion batteries

    DOE Patents [OSTI]

    Lopez, Herman A.; Anguchamy, Yogesh Kumar; Deng, Haixia; Han, Yongbon; Masarapu, Charan; Venkatachalam, Subramanian; Kumar, Suject

    2015-11-19

    High capacity silicon based anode active materials are described for lithium ion batteries. These materials are shown to be effective in combination with high capacity lithium rich cathode active materials. Supplemental lithium is shown to improve the cycling performance and reduce irreversible capacity loss for at least certain silicon based active materials. In particular silicon based active materials can be formed in composites with electrically conductive coatings, such as pyrolytic carbon coatings or metal coatings, and composites can also be formed with other electrically conductive carbon components, such as carbon nanofibers and carbon nanoparticles. Additional alloys with silicon are explored.

  20. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1997-01-01

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

  1. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, A.M.

    1997-10-07

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

  2. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  3. Silicon-embedded copper nanostructure network for high energy storage

    DOE Patents [OSTI]

    Yu, Tianyue

    2016-03-15

    Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

  4. Solution-processed amorphous silicon surface passivation layers

    SciTech Connect (OSTI)

    Mews, Mathias Sontheimer, Tobias; Korte, Lars; Rech, Bernd; Mader, Christoph; Traut, Stephan; Wunnicke, Odo

    2014-09-22

    Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120?meV and 200?meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37?ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724?mV was achieved, demonstrating excellent silicon surface passivation.

  5. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi (Ithaca, NY); Baik, Sunggi (Ithaca, NY)

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  6. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1984-12-11

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  7. Efficient Nanostructured Silicon (Black Silicon) PV Devices - Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation Portal Efficient Nanostructured Silicon (Black Silicon) PV Devices National Renewable Energy Laboratory Contact NREL About This Technology Technology Marketing Summary Antireflective (AR) coatings on solar cells increase the efficiency of the cells by suppressing reflection, which allows more photons to enter a silicon (Si) wafer and increases the flow of electricity. Traditional AR coatings however, add significant cost to the solar cell manufacturing process. NREL scientists

  8. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  9. Multicolored Vertical Silicon Nanowires

    SciTech Connect (OSTI)

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  10. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  11. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  12. Advances in amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Carlson, D.E.; Rajan, K.; Arya, R.R.; Willing, F.; Yang, L.

    1998-10-01

    With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new {ital a}{endash}Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8{percent}, and efficiencies over 10{percent} may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of {dollar_sign}1 per peak watt. These new modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications. {copyright} {ital 1998 Materials Research Society.}

  13. Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

    DOE Patents [OSTI]

    Neudecker, Bernd J. (Knoxville, TN); Bates, John B. (Oak Ridge, TN)

    2001-01-01

    Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

  14. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  15. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  16. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A.; Kaplan, Selig N.; Perez-Mendez, Victor

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  17. Size Dependence of the Bandgap of Plasma Synthesized Silicon Nanoparticles Through Direct Introduction of Sulfur Hexafluoride

    SciTech Connect (OSTI)

    Theingi, S.; Guan, T. Y.; Kendrick, C.; Klafehn, G.; Gorman, B. P.; Taylor, P. C.; Lusk, M. T.; Stradins, Pauls; Collins, R. T.

    2015-10-19

    Developing silicon nanoparticle (SiNP) synthesis techniques that allow for straightforward control of nanoparticle size and associated optical properties is critical to potential applications of these materials. In addition, it is, in general, hard to probe the absorption threshold in these materials due to silicon's low absorption coefficient. In this study, size is controlled through direct introduction of sulfur hexafluoride (SF6) into the dilute silane precursor of plasma synthesized SiNPs. Size reduction by nearly a factor of two with high crystallinity independent of size is demonstrated. Optical absorption spectra of the SiNPs in the vicinity of the bandgap are measured using photothermal deflection spectroscopy. Bandgap as a function of size is extracted taking into account the polydispersity of the samples. A systematic blue shift inabsorption edge due to quantum confinement in the SiNPs is observed with increasing flow of SF6. Photoluminescence (PL) spectra show a similar blue shift with size. However, a ~300 meV difference in energy between emission and absorption for all sizes suggests that PL emission involves a defect related process. While PL may allow size-induced shifts in the bandgap of SiNPs to be monitored, it cannot be relied on to give an accurate value for the bandgap as a function of size.

  18. Silicon Border Development LLC | Open Energy Information

    Open Energy Info (EERE)

    Silicon Border Development LLC Jump to: navigation, search Name: Silicon Border Development LLC Place: Poway, California Zip: 92064 Sector: Solar Product: US-based developer of...

  19. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1996-01-30

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  20. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1998-06-02

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  1. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1998-06-02

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  2. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1996-01-01

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  3. Silicon Crystals Inc | Open Energy Information

    Open Energy Info (EERE)

    Zip: 95742 Product: Supplier of semi-conductor grade silicon for applications that demand unusual shapes and sizes. References: Silicon Crystals Inc1 This article is a stub....

  4. Longwei Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Silicon Co Ltd Place: Liancheng, Fujian Province, China Sector: Solar Product: A Chinese sillicon metal producer who also produce 4N-6N silicon for solar use. Coordinates:...

  5. Silicon Chemical Corp SCC | Open Energy Information

    Open Energy Info (EERE)

    Corp SCC Jump to: navigation, search Name: Silicon Chemical Corp (SCC) Place: Vancouver, Washington State Zip: 98687 Product: US manufacturer of polysilicon and silicon chemical...

  6. Silicon Photonics for Low- Energy Optical Communications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    will likely achieve the high yield, high reliability, and low costs common in the electronics industry. Enabling Power Savings Silicon photonics devices are comprised of silicon...

  7. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, J.I.; Wu, C.P.

    1982-03-30

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

  8. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  9. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  10. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  11. Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

    DOE Patents [OSTI]

    Kolodin, Boris; Deshpande, Anirudha R

    2014-09-16

    A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

  12. Argonne and CalBattery strike deal for silicon-graphene anode...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    today that they have signed a licensing agreement for an Argonne-developed, silicon-graphene composite anode material for high-energy lithium batteries. CalBattery plans to...

  13. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  14. Nuclear breeder reactor fuel element with silicon carbide getter

    DOE Patents [OSTI]

    Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  15. Thermo-mechanical characterization of silicone foams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rangaswamy, Partha; Smith, Nickolaus A.; Cady, Carl M.; Lewis, Matthew W.

    2015-10-01

    Cellular solids such as elastomeric foams are used in many structural applications to absorb and dissipate energy, due to their light weight (low density) and high energy absorption capability. In this paper we will discuss foams derived from S5370, a silicone foam formulation developed by Dow Corning. In the application presented, the foam is consolidated into a cushion component of constant thickness but variable density. A mechanical material model developed by Lewis (2013), predicts material response, in part, as a function of relative density. To determine the required parameters for this model we have obtained the mechanical response in compressionmore »for ambient, cold and hot temperatures. The variable density cushion provided samples sufficient samples so that the effect of sample initial density on the mechanical response could be studied. The mechanical response data showed extreme sensitivity to relative density. We also observed at strains corresponding to 1 MPa a linear relationship between strain and initial density for all temperatures. Samples taken from parts with a history of thermal cycling demonstrated a stiffening response that was a function of temperature, with the trend of more stiffness as temperature increased above ambient. This observation is in agreement with the entropic effects on the thermo-mechanical behavior of silicone polymers. In this study, we present the experimental methods necessary for the development of a material model, the testing protocol, analysis of test data, and a discussion of load (stress) and gap (strain) as a function of sample initial densities and temperatures« less

  16. Thermo-mechanical characterization of silicone foams

    SciTech Connect (OSTI)

    Rangaswamy, Partha; Smith, Nickolaus A.; Cady, Carl M.; Lewis, Matthew W.

    2015-10-01

    Cellular solids such as elastomeric foams are used in many structural applications to absorb and dissipate energy, due to their light weight (low density) and high energy absorption capability. In this paper we will discuss foams derived from S5370, a silicone foam formulation developed by Dow Corning. In the application presented, the foam is consolidated into a cushion component of constant thickness but variable density. A mechanical material model developed by Lewis (2013), predicts material response, in part, as a function of relative density. To determine the required parameters for this model we have obtained the mechanical response in compression for ambient, cold and hot temperatures. The variable density cushion provided samples sufficient samples so that the effect of sample initial density on the mechanical response could be studied. The mechanical response data showed extreme sensitivity to relative density. We also observed at strains corresponding to 1 MPa a linear relationship between strain and initial density for all temperatures. Samples taken from parts with a history of thermal cycling demonstrated a stiffening response that was a function of temperature, with the trend of more stiffness as temperature increased above ambient. This observation is in agreement with the entropic effects on the thermo-mechanical behavior of silicone polymers. In this study, we present the experimental methods necessary for the development of a material model, the testing protocol, analysis of test data, and a discussion of load (stress) and gap (strain) as a function of sample initial densities and temperatures

  17. Origami-enabled deformable silicon solar cells

    SciTech Connect (OSTI)

    Tang, Rui; Huang, Hai; Liang, Hanshuang; Liang, Mengbing; Tu, Hongen; Xu, Yong; Song, Zeming; Jiang, Hanqing; Yu, Hongyu

    2014-02-24

    Deformable electronics have found various applications and elastomeric materials have been widely used to reach flexibility and stretchability. In this Letter, we report an alternative approach to enable deformability through origami. In this approach, the deformability is achieved through folding and unfolding at the creases while the functional devices do not experience strain. We have demonstrated an example of origami-enabled silicon solar cells and showed that this solar cell can reach up to 644% areal compactness while maintaining reasonable good performance upon cyclic folding/unfolding. This approach opens an alternative direction of producing flexible, stretchable, and deformable electronics.

  18. Hybrid stretchable circuits on silicone substrate

    SciTech Connect (OSTI)

    Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk [Nanoscience Centre, University of Cambridge, Cambridge CB01FF (United Kingdom); Liu, Q.; Suo, Z. [School of Engineering and Applied Sciences and Kavli Institute for Bionano Science and Technology, Harvard University, Cambridge, Massachusetts 02138 (United States); Lacour, S. P., E-mail: stephanie.lacour@epfl.ch [Centre for Neuroprosthetics and Laboratory for Soft Bioelectronics Interfaces, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015 (Switzerland)

    2014-04-14

    When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

  19. Thin Silicon Solar Cells: A Path to 35% Shockley-Queisser Limits

    SciTech Connect (OSTI)

    Ding, Laura; Boccard, Mathieu; Williams, Joshua; Jeffries, April; Gangam, Srikanth; Ghosh, Kunal; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, Harry; Buonassisi, Tonio; Bremner, Stephen; Green, Martin; Balif, Christoph; Bertoni, Mariana

    2014-06-08

    Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

  20. Pioneer Materials Inc PMI | Open Energy Information

    Open Energy Info (EERE)

    California Zip: 90505 Product: US-based manufacturer of non-silicon feedstock material for thin-film PV products such as zinc-oxide and indium-tin-oxide. Coordinates:...

  1. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  2. Computational Approach to Photonic Drilling of Silicon Carbide

    SciTech Connect (OSTI)

    Samant, Anoop N; Daniel, Claus; Chand, Ronald H; Blue, Craig A; Dahotre, Narendra B

    2009-01-01

    The ability of lasers to carry out drilling processes in silicon carbide ceramic was investigated in this study. A JK 701 pulsed Nd:YAG laser was used for drilling through the entire depth of silicon carbide plates of different thicknesses. The laser parameters were varied in different combinations for a well controlled drilling through the entire thickness of the SiC plates. A drilling model incorporating effects of various physical phenomena such as decomposition, evaporation induced recoil pressure, and surface tension was developed. Such comprehensive model was capable of advance prediction of the energy and time required for drilling a hole through any desired depth of material.

  3. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    1999-01-01

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  4. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    2002-01-01

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  5. Silicon nitride ceramic comprising samaria and ytterbia

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

  6. Electrically Integrated Graphene on Silicon Nitride Liquid Flow Cells for

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High Resolution TEM - Energy Innovation Portal Energy Storage Energy Storage Advanced Materials Advanced Materials Find More Like This Return to Search Electrically Integrated Graphene on Silicon Nitride Liquid Flow Cells for High Resolution TEM Lawrence Berkeley National Laboratory Contact LBL About This Technology Technology Marketing Summary A Berkeley Lab research team led by Paul Alivisatos and Alex Zettl has developed liquid flow cells providing unprecedented resolution and contrast in

  7. General Engineers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Engineers The U.S. Energy Information Administration (EIA) within the Department of Energy has forged a world-class information program that stresses quality, teamwork, and employee growth. In support of our program, we offer a variety of profes- sional positions, including the General Engineer, whose work is associated with analytical studies and evaluation projects pertaining to the operations of the energy industry. Responsibilities: General Engineers perform or participate in one or

  8. Advanced Materials and Manufacturing | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials and Manufacturing Argonne researchers prepare silicon wafers for full-scale deposition testing of dielectric coatings for large area detectors. Argonne researchers prepare silicon wafers for full-scale deposition testing of dielectric coatings for large area detectors. Argonne's award-winning expertise in the creation and analysis of novel materials contributes to wide-ranging advances that improve industrial processes and manufactured products, saving energy and reducing waste. Many

  9. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  10. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  11. BY SILICON CRYSTALS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    c October 29, 1942 a 1 1 _MIGH aECTgFXCATIOH - BY SILICON CRYSTALS . . c .. I n. The excellent pesformmce of Brftieh "red dot" c r y s t a l s f e explained R R due t o the kgife edge contact i n a t A polfehod ~ X ' f l i C B o H i g h frequency m c t l f f c n t f o n 8ependre c r i t i c a l l y on the ape%e;y of the rectifytnc boundary layer o f the crystal, C, For hl#$ comvere~on e f f i c i e n c y , the product c d t h i ~ capacity m a o f ' t h e @forward" (bulk) re-.

  12. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  13. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, Raoul B. (Haifa, IL)

    1988-01-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  14. Selective etchant for oxide sacrificial material in semiconductor device fabrication

    DOE Patents [OSTI]

    Clews, Peggy J.; Mani, Seethambal S.

    2005-05-17

    An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.

  15. Thermoelectric materials and methods for synthesis thereof

    DOE Patents [OSTI]

    Ren, Zhifeng; Zhang, Qinyong; Zhang, Qian; Chen, Gang

    2015-08-04

    Materials having improved thermoelectric properties are disclosed. In some embodiments, lead telluride/selenide based materials with improved figure of merit and mechanical properties are disclosed. In some embodiments, the lead telluride/selenide based materials of the present disclosure are p-type thermoelectric materials formed by adding sodium (Na), silicon (Si) or both to thallium doped lead telluride materials. In some embodiments, the lead telluride/selenide based materials are formed by doping lead telluride/selenides with potassium.

  16. The future of amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Crandall, R.; Luft, W.

    1995-06-01

    Amorphous silicon modules are commercially available. They are the first truly commercial thin-film photovoltaic (PV) devices. Well-defined production processes over very large areas (>1 m{sup 2}) have been implemented. There are few environmental issues during manufacturing, deployment in the field, or with the eventual disposal of the modules. Manufacturing safety issues are well characterized and controllable. The highest measured initial efficiency to date is 13.7% for a small triple-stacked cell and the highest stabilized module efficiency is 10%. There is a consensus among researchers, that in order to achieve a 15% stabilized efficiency, a triple-junction amorphous silicon structure is required. Fundamental improvements in alloys are needed for higher efficiencies. This is being pursued through the DOE/NREL Thin-Film Partnership Program. Cost reductions through improved manufacturing processes are being pursued under the National Renewable Energy Laboratory/US Department of Energy (NREL/DOE)-sponsored research in manufacturing technology (PVMaT). Much of the work in designing a-Si devices is a result of trying to compensate for the Staebler-Wronski effect. Some new deposition techniques hold promise because they have produced materials with lower stabilized defect densities. However, none has yet produced a high efficiency device and shown it to be more stable than those from standard glow discharge deposited material.

  17. Cordierite silicon nitride filters. Final report

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B.; Duiven, R.; Berger, M.; Cleveland, J.; Ferri, J.

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  18. Electrode material comprising graphene-composite materials in a graphite network

    DOE Patents [OSTI]

    Kung, Harold H.; Lee, Jung K.

    2014-07-15

    A durable electrode material suitable for use in Li ion batteries is provided. The material is comprised of a continuous network of graphite regions integrated with, and in good electrical contact with a composite comprising graphene sheets and an electrically active material, such as silicon, wherein the electrically active material is dispersed between, and supported by, the graphene sheets.

  19. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  20. General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Tables The General Tables for the most recent TUNL evaluation of "Energy Levels of Light Nuclei, A = 8, 9, 10" published in Nuclear Physics A745 (2004) p.155 and "Energy Levels of Light Nuclei, A = 5, 6, 7" published in Nuclear Physics A708 (2002) p.3 are available below. Beginning with the A = 5, 6, 7 nuclei, the General Tables will no longer be included in the publications of "Energy Levels of Light Nuclei" in Nuclear Physics A. The tables will be placed

  1. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOE Patents [OSTI]

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  2. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    country (FTA)(Australia, Bahrain, Canada, Chile, Costa Rica, Dominican Republic, El Salvador, Guatemala, Honduras, Israel, Mexico, Morocco, Nicaragua, Oman, Peru, or Singapore);...

  3. Direct Production of Silicones From Sand

    SciTech Connect (OSTI)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  4. Composition and method for removing photoresist materials from electronic components

    DOE Patents [OSTI]

    Davenhall, Leisa B. (Santa Fe, NM); Rubin, James B. (Los Alamos, NM)

    2002-01-01

    The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier which can be used to contact substrates for electronic parts such as semiconductor wafers or chips to remove photoresist materials which are applied to the substrates during manufacture of the electronic parts. The dense phase fluid modifier is one selected from the group of cyclic, aliphatic or alicyclic compounds having the functional group: ##STR1## wherein Y is a carbon, oxygen, nitrogen, phosphorus or sulfur atom or a hydrocarbon group having from 1 to 10 carbon atoms, a halogen or halogenated hydrocarbon group having from 1 to 10 carbon atoms, silicon or a fluorinated silicon group; and wherein R.sub.1 and R.sub.2 can be the same or different substituents; and wherein, as in the case where X is nitrogen, R.sub.1 or R.sub.2 may not be present. The invention compositions generally are applied to the substrates in a pulsed fashion in order to remove the hard baked photoresist material remaining on the surface of the substrate after removal of soft baked photoresist material and etching of the barrier layer.

  5. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Information General Information As a premier national research and development laboratory, LANL seeks to do business with qualified companies that offer value and high quality products and services. Contact Small Business Office (505) 667-4419 Email Are you a good fit for LANL? Need to find out more? LANL and its Small Business Program is only a phone call or email away. (See contact information, at left.) We want to be sure you can find a good fit with our procurement opportunities and

  6. Philips Lumileds Is Exploring the Use of Silicon Substrates to Lower the Cost of LEDs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Philips Lumileds is exploring the use of nitride epitaxy on 150mm silicon substrates to produce low-cost, warm-white, high-performance general-illumination LEDs. Most LEDs are made with C-plane sapphire substrates, but silicon—at roughly half a penny per square millimeter—is much cheaper, and it's also easier to obtain. Philips Lumileds is attempting to adapt the use of silicon to the manufacture of LEDs, drawing upon the knowledge base and depreciated equipment of the computer industry, which has been using silicon substrates for decades.

  7. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  8. Photovoltaic Cell Material Basics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Material Basics Photovoltaic Cell Material Basics August 19, 2013 - 4:43pm Addthis Although crystalline silicon cells are the most common type, photovoltaic (PV), or solar cells, can be made of many semiconductor materials. Each material has unique strengths and characteristics that influence its suitability for specific applications. For example, PV cell materials may differ based on their crystallinity, bandgap, absorbtion, and manufacturing complexity. Learn more about each of these

  9. Energy Absorbing Material - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Materials Advanced Materials Find More Like This Return to Search Energy Absorbing Material Lawrence Livermore National Laboratory Contact LLNL About This Technology Technology Marketing Summary To overcome limitations with cellular silicone foams, LLNL innovators have developed a new 3D energy absorbing material with tailored/engineered bulk-scale properties. The energy absorbing material has 3D patterned architectures specially designed for specific energy absorbing properties. The

  10. Sensitivity of silicon 1-MeV damage function to cross-section evaluation

    SciTech Connect (OSTI)

    Griffin, P.J.; Danjaji, M.B.

    1995-12-31

    The electronics radiation hardness-testing community uses the American Society for Testing and Materials (ASTM) E722-93 Standard Practice to define the energy dependence of the nonionizing neutron damage to silicon semiconductors. This neutron displacement damage response function is defined to be equal to the silicon displacement kerma. An Oak Ridge National Laboratory (ORNL) {sup 28}Si cross-section evaluation and the NJOY code are used to define the standard response function to be used in reporting 1-MeV (silicon) neutron damage and in determining neutron damage equivalence between test facilities. This paper provides information for the precision and bias section of the E722 standard.

  11. GENERAL ASSIGNMENT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GENERAL ASSIGNMENT KNOW ALL MEN BY THESE PRESENTS, that ___________________________________, a corporation organized and existing under the laws of the State of ________________________, with its principal place of business at ___________________________________, ___________________________________ has been engaged in performing work under Award Number DE-__________________________with the UNITED STATES OF AMERICA (hereinafter called the "Government"), represented by the UNITED STATES

  12. Phosphorus and aluminum gettering - investigation of synergistic effects in single-crystal and multicrystalline silicon

    SciTech Connect (OSTI)

    Schubert, W.K.; Gee, J.M.

    1996-06-01

    Synergistic effects from simultaneous phosphorus-diffusion/aluminium alloy gettering are investigated in three different crystalline- silicon substrates. The silicon materials, experimental design, characterization, and analysis are presented. Some evidence for synergism is observed in the finished cells on all three substrates types. These results are combined with complementary observations of the effects of oxidation on bulk properties of previously gettered substrates to suggest a high volume, low cost, process implementation which could give up to 9% relative increase in efficiency.

  13. Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Ultratough, Thermally Stable Polycrystalline Diamond/Silicon Carbide Nanocomposites for Drill Bits Synthesis, Characterization, and Application of Nanostructured Diamond/ Silicon Carbide Composites for Improved Drill Bit Performance Industrial drilling, mining, cutting, and grinding make heavy use of superhard materials with superior wear resistance. In the oil and gas drilling industry, the use of polycrystalline diamond compact (PDC) drill bits has become increasingly common, with PDC drill

  14. Becancour Silicon Inc BSI | Open Energy Information

    Open Energy Info (EERE)

    to: navigation, search Name: Becancour Silicon Inc (BSI) Place: St. Laurent, Quebec, Canada Zip: H4M2M4 Sector: Solar Product: Canadian supplier of silicon metal for the...

  15. ThinSilicon | Open Energy Information

    Open Energy Info (EERE)

    ThinSilicon Place: California Product: US-based developer of thin-film PV module manufacturing technology. References: ThinSilicon1 This article is a stub. You can help OpenEI...

  16. Jiangshan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    China Zip: 134700 Product: Chinese metal silicon producer who is doing R&D to purify its silicon to 6N by UMG method Coordinates: 42.088902, 127.218193 Show Map Loading...

  17. Crystalline Silicon Photovoltaics Research | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Crystalline Silicon Photovoltaics Research Crystalline Silicon Photovoltaics Research DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion on the production and manufacturing of this solar technology. Background Crystalline silicon PV cells are the most common solar cells used in commercially available solar panels, representing 87% of world PV cell

  18. Black Silicon Etching - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Black Silicon Etching Award-winning, efficient, and inexpensive photovoltaic technology National Renewable Energy Laboratory Contact NREL About This Technology Three silicon wafers, showing absorbed light: (left) micron-scale texture, (center) NREL&rsquo;s Black Silicon Etch, and (right) micron-scale texture with an antireflective coating. Three silicon wafers, showing absorbed light: (left) micron-scale texture,

  19. Silicon nanocrystal inks, films, and methods

    DOE Patents [OSTI]

    Wheeler, Lance Michael; Kortshagen, Uwe Richard

    2015-09-01

    Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

  20. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  1. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs;

  2. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  3. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  4. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  5. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect (OSTI)

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  6. Inspector General

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inspector General Office of the Secretary Dr. Ernest J. Moniz Secretary Dr. Elizabeth Sherwood-Randall Deputy Secretary Chief of Staff Office of the Under Secretary for Nuclear Security and National Nuclear Security Administration Frank G. Klotz Under Secretary for Nuclear Security Administrator, NNSA Madelyn Creedon Principal Deputy Administrator NNSA DEPARTMENT OF ENERGY Office of the Under Secretary for Management & Performance Vacant Under Secretary for Management and Performance Office

  7. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  8. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, Shiu-Wing

    1997-01-01

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  9. Prealloyed catalyst for growing silicon carbide whiskers

    DOE Patents [OSTI]

    Shalek, Peter D. (Los Alamos, NM); Katz, Joel D. (Niagara Falls, NY); Hurley, George F. (Los Alamos, NM)

    1988-01-01

    A prealloyed metal catalyst is used to grow silicon carbide whiskers, especially in the .beta. form. Pretreating the metal particles to increase the weight percentages of carbon or silicon or both carbon and silicon allows whisker growth to begin immediately upon reaching growth temperature.

  10. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  11. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

    1988-11-01

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  12. Ceramic composites reinforced with modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  13. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  14. General Publications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Publications Print ALS Strategic Plan 2015-19 cover image An updated version of the ALS Strategic Plan, covering the five-year period from 2015 to 2019. As in the 2014-18 version, Section I gives a brief synopsis on beamline and endstation projects. The science drivers behind these projects are explained in greater detail in Section II, and a very brief description of emerging plans for a ALS-U are in Section III. Soft X-ray Science Opportunities Using Diffraction-Limited Storage Rings A

  15. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  16. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  17. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  18. Microelectromechanical pump utilizing porous silicon

    DOE Patents [OSTI]

    Lantz, Jeffrey W.; Stalford, Harold L.

    2011-07-19

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  19. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  20. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  1. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  2. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  3. Final report on LDRD Project: Quantum confinement and light emission in silicon nanostructures

    SciTech Connect (OSTI)

    Guilinger, T.R.; Kelly, M.J.; Follstaedt, D.M.

    1995-02-01

    Electrochemically formed porous silicon (PS) was reported in 1991 to exhibit visible photoluminescence. This discovery could lead to the use of integrated silicon-based optoelectronic devices. This LDRD addressed two general goals for optical emission from Si: (1) investigate the mechanisms responsible for light emission, and (2) tailor the microstructure and composition of the Si to obtain photoemission suitable for working devices. PS formation, composition, morphology, and microstructure have been under investigation at Sandia for the past ten years for applications in silicon-on-insulator microelectronics, micromachining, and chemical sensors. The authors used this expertise to form luminescent PS at a variety of wavelengths and have used analytical techniques such as in situ Raman and X-ray reflectivity to investigate the luminescence mechanism and quantify the properties of the porous silicon layer. Further, their experience with ion implantation in Si lead to an investigation into alternate methods of producing Si nanostructures that visibly luminesce.

  4. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOE Patents [OSTI]

    Becher, Paul F. (Oak Ridge, TN); Lin, Hua-Tay (Oak Ridge, TN)

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  5. A micron resolution optical scanner for characterization of silicon detectors

    SciTech Connect (OSTI)

    Shukla, R. A.; Dugad, S. R. Gopal, A. V.; Gupta, S. K.; Prabhu, S. S.; Garde, C. S.

    2014-02-15

    The emergence of high position resolution (?10 ?m) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 ?m at 1 ? ? level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 ?m) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.

  6. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes

    SciTech Connect (OSTI)

    Li, Xiaolin; Gu, Meng; Hu, Shenyang Y.; Kennard, Rhiannon; Yan, Pengfei; Chen, Xilin; Wang, Chong M.; Sailor, Michael J.; Zhang, Jiguang; Liu, Jun

    2014-07-08

    Nanostructured silicon is a promising anode material for high performance lithium-ion batteries, yet scalable synthesis of such materials, and retaining good cycling stability in high loading electrode remain significant challenges. Here, we combine in-situ transmission electron microscopy and continuum media mechanical calculations to demonstrate that large (>20 micron) mesoporous silicon sponge (MSS) prepared by the scalable anodization method can eliminate the pulverization of the conventional bulk silicon and limit particle volume expansion at full lithiation to ~30% instead of ~300% as observed in bulk silicon particles. The MSS can deliver a capacity of ~750 mAh/g based on the total electrode weight with >80% capacity retention over 1000 cycles. The first-cycle irreversible capacity loss of pre-lithiated MSS based anode is only <5%. The insight obtained from MSS also provides guidance for the design of other materials that may experience large volume variation during operations.

  7. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect (OSTI)

    Uçar, A.; Çopuro?lu, M.; Suzer, S.; Baykara, M. Z.; Ar?kan, O.

    2014-10-28

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (?0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  8. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-04-28

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  9. Silicon-Based Thermoelectrics: Harvesting Low Quality Heat Using Economically Printed Flexible Nanostructured Stacked Thermoelectric Junctions

    SciTech Connect (OSTI)

    2010-03-01

    Broad Funding Opportunity Announcement Project: UIUC is experimenting with silicon-based materials to develop flexible thermoelectric devices—which convert heat into energy—that can be mass-produced at low cost. A thermoelectric device, which resembles a computer chip, creates electricity when a different temperature is applied to each of its sides. Existing commercial thermoelectric devices contain the element tellurium, which limits production levels because tellurium has become increasingly rare. UIUC is replacing this material with microscopic silicon wires that are considerably cheaper and could be equally effective. Improvements in thermoelectric device production could return enough wasted heat to add up to 23% to our current annual electricity production.

  10. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect (OSTI)

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  11. Microsoft Word - DOE-ID-14-088 General Atomics EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    8 SECTION A. Project Title: Modularization Fabrication and Characterization of Complex Silicon Carbide Composite Structures - General Atomics SECTION B. Project Description General Atomics will The proposed project will explore innovative methods for fabricating and testing complex Silicon carbide (SiC) and SiC fiber-reinforced composite structures pertinent to advanced reactor concepts. The project will use existing facilities to conduct the research. SECTION C. Environmental Aspects /

  12. Recent Progress in Silicon-based Spintronic Materials (Book)...

    Office of Scientific and Technical Information (OSTI)

    Have feedback or suggestions for a way to improve these results? Save Share this Record Citation Formats MLA APA Chicago Bibtex Export Metadata Endnote Excel CSV XML Save to My ...

  13. Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

    DOE Patents [OSTI]

    Blewer, Robert S. (Albuquerque, NM); Gullinger, Terry R. (Albuquerque, NM); Kelly, Michael J. (Albuquerque, NM); Tsao, Sylvia S. (Albuquerque, NM)

    1991-01-01

    A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

  14. Analytical and Experimental Evaluation of Joining Silicon Carbide to Silicon Carbide and Silicon Nitride to Silicon Nitride for Advanced Heat Engine Applications Phase II

    SciTech Connect (OSTI)

    Sundberg, G.J.

    1994-01-01

    Techniques were developed to produce reliable silicon nitride to silicon nitride (NCX-5101) curved joins which were used to manufacture spin test specimens as a proof of concept to simulate parts such as a simple rotor. Specimens were machined from the curved joins to measure the following properties of the join interlayer: tensile strength, shear strength, 22 C flexure strength and 1370 C flexure strength. In parallel, extensive silicon nitride tensile creep evaluation of planar butt joins provided a sufficient data base to develop models with accurate predictive capability for different geometries. Analytical models applied satisfactorily to the silicon nitride joins were Norton's Law for creep strain, a modified Norton's Law internal variable model and the Monkman-Grant relationship for failure modeling. The Theta Projection method was less successful. Attempts were also made to develop planar butt joins of siliconized silicon carbide (NT230).

  15. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect (OSTI)

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  16. Flexible Thin-Film Silicon Solar Cells

    SciTech Connect (OSTI)

    Vijh, Aarohi; Cao, Simon; Mohring, Brad

    2014-01-11

    High fuel costs, environmental concerns and issues of national energy security have brought increasing attention to a distributed generation program for electricity based on solar technology. Rooftop photovoltaic (PV) systems provide distributed generation since the power is consumed at the point of production, thus eliminating the need for costly additional transmission lines. However, most current photovoltaic modules are heavy and require a significant amount of labor and accessory hardware such as mounting frames for installation on rooftops. This makes rooftop systems impractical or cost prohibitive in many instances. Under this project, Xunlight has advanced its manufacturing process for the production of lightweight, flexible thin-film silicon based photovoltaic modules, and has enhanced the reliability and performance of Xunlight’s products. These modules are easily unrolled and adhered directly to standard commercial roofs without mounting structures or integrated directly into roofing membrane materials for the lowest possible installation costs on the market. Importantly, Xunlight has now established strategic alliances with roofing material manufacturers and other OEMs for the development of building integrated photovoltaic roofing and other PV-enabled products, and has deployed its products in a number of commercial installations with these business partners.

  17. Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

    SciTech Connect (OSTI)

    Carta, Fabio Hlaing, Htay; Kymissis, Ioannis; Gates, Stephen M.; Edelstein, Daniel C.; Limanov, Alexander B.; Im, James S.

    2014-12-15

    We present the excimer laser crystallization of amorphous silicon on a low dielectric constant (low-k) insulator for very large scale integration monolithic 3D integration and demonstrate that low dielectric constant materials are suitable substrates for 3D integration through laser crystallization of silicon thin films. We crystallized 100?nm amorphous silicon on top of SiO{sub 2} and SiCOH (low-k) dielectrics, at different material thicknesses (1??m, 0.75??m, and 0.5??m). The amorphous silicon crystallization on low-k dielectric requires 35% less laser energy than on an SiO{sub 2} dielectric. This difference is related to the thermal conductivity of the two materials, in agreement with one dimensional simulations of the crystallization process. We analyzed the morphology of the material through defect-enhanced microscopy, Raman spectroscopy, and X-ray diffraction analysis. SEM micrographs show that polycrystalline silicon is characterized by micron-long grains with an average width of 543?nm for the SiO{sub 2} sample and 570?nm for the low-k samples. Comparison of the Raman spectra does not show any major difference in film quality for the two different dielectrics, and polycrystalline silicon peaks are closely placed around 517?cm{sup ?1}. From X-ray diffraction analysis, the material crystallized on SiO{sub 2} shows a preferential (111) crystal orientation. In the SiCOH case, the 111 peak strength decreases dramatically and samples do not show preferential crystal orientation. A 1D finite element method simulation of the crystallization process on a back end of line structure shows that copper (Cu) damascene interconnects reach a temperature of 70?°C or lower with a 0.5??m dielectric layer between the Cu and the molten Si layer, a favorable condition for monolithic 3D integration.

  18. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng (Los Alamos, NM)

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  19. Laser, Supercomputer Measure Speedy Electrons in Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser, Supercomputer Measure Speedy Electrons in Silicon Laser, Supercomputer Measure Speedy Electrons in Silicon Simulations at NERSC Help Illuminate Attosecond Laser Experiment Findings December 19, 2014 Contact: Robert Sanders, rlsanders@berkeley.edu, (510) 643-6998 speedyelectrons In silicon, electrons attached to atoms in the crystal lattice can be mobilized into the conduction band by light or voltage. Berkeley scientists have taken snapshots of this very brief band-gap jump and timed it

  20. Method for fabricating pixelated silicon device cells

    DOE Patents [OSTI]

    Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

    2015-08-18

    A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

  1. Silicon Valley Biodiesel Inc | Open Energy Information

    Open Energy Info (EERE)

    Biodiesel Inc Jump to: navigation, search Name: Silicon Valley Biodiesel Inc. Place: Sunnyvale, California Zip: CA 94086 Product: Manufactures biodiesel for the local diesel fuel...

  2. Process for Polycrystalline film silicon growth

    DOE Patents [OSTI]

    Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  3. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of multicrystalline silicon solar cells led to the concept of defect engineering by ... systems decreased from the current price of approximately 16,000-25,000. One way ...

  4. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon...

    Office of Scientific and Technical Information (OSTI)

    Hydrogenation of Dislocation- Limited Heteroepitaxial Silicon Solar Cells Preprint Michael L. Bolen, Sachit Grover, Charles W. Teplin, Howard M. Branz, and Paul Stradins National...

  5. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon...

    Office of Scientific and Technical Information (OSTI)

    Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P. 08 HYDROGEN; 14...

  6. Fuyuan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Fuyuan Silicon Co Ltd Place: Baishan, Jilin Province, China Sector: Solar Product: A Chinese solar-grade polysilicon producer using metallurgical method. Coordinates:...

  7. Sunsing Silicon Inc | Open Energy Information

    Open Energy Info (EERE)

    Sunsing Silicon Inc Place: Liancheng, Fujian Province, China Zip: 366200 Product: A Chinese polysilicon manufacturer applying self-developed metallurgical method References:...

  8. Solar cell with silicon oxynitride dielectric layer

    DOE Patents [OSTI]

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

  9. Silicon-Graphene Anodes | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicon-Graphene Anodes Technology available for licensing: Provides low-cost production process. Advanced gas phase deposition process yields anodes with five times the specific...

  10. Semipermeable Membranes for Micromachined Silicon Surfaces -...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for lap-on-a-chip products Eases cost and complexity of manufacturing Robust Permeability control at time of manufacture Compatible with a wide range of silicon Applications...

  11. Norwegian Silicon Refining AS | Open Energy Information

    Open Energy Info (EERE)

    214 Product: Oslo-based company with an upgraded metallurgical silicon (UMG) production process called the Stubergh method. Coordinates: 59.91228, 10.74998 Show Map Loading...

  12. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  13. RSI Silicon Products LLC | Open Energy Information

    Open Energy Info (EERE)

    startup which is developing a process for solar-grade silicon manufacture at low energy intensity, spinoff from MIT. Coordinates: 47.237806, -121.179542 Show Map...

  14. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Sutton, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Worcester, MA); Yeckley, Russell L. (Latrobe, PA)

    1998-01-01

    A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.

  15. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, Ken (Naperville, IL)

    1994-01-01

    An iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100.degree. C.

  16. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, K.

    1994-12-27

    An iron-based alloy is described containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100 C. 8 figures.

  17. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  18. Nano tech Silicon India Ltd | Open Energy Information

    Open Energy Info (EERE)

    tech Silicon India Ltd Jump to: navigation, search Name: Nano-tech Silicon India Ltd Place: Hyderabad, Andhra Pradesh, India Product: Nano-tech Silicon is a manufacturer of PV...

  19. ALS Ceramics Materials Research Advances Engine Performance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Ceramics Materials Research Advances Engine Performance ALS Ceramics Materials Research Advances Engine Performance Print Thursday, 27 September 2012 00:00 ritchie ceramics This 3D image of a ceramic composite specimen imaged under load at 1750C shows the detailed fracture patterns that researchers are able to view using ALS Beamline 8.3.2. The vertical white lines are the individual silicon carbide fibers in this sample about 500 microns in diameter. LBNL senior materials scientist and U.C.

  20. ALS Ceramics Materials Research Advances Engine Performance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ALS Ceramics Materials Research Advances Engine Performance ALS Ceramics Materials Research Advances Engine Performance Print Thursday, 27 September 2012 00:00 ritchie ceramics This 3D image of a ceramic composite specimen imaged under load at 1750C shows the detailed fracture patterns that researchers are able to view using ALS Beamline 8.3.2. The vertical white lines are the individual silicon carbide fibers in this sample about 500 microns in diameter. LBNL senior materials scientist and U.C.

  1. Anchored nanostructure materials and method of fabrication

    DOE Patents [OSTI]

    Seals, Roland D; Menchhofer, Paul A; Howe, Jane Y; Wang, Wei

    2012-11-27

    Anchored nanostructure materials and methods for their fabrication are described. The anchored nanostructure materials may utilize nano-catalysts that include powder-based or solid-based support materials. The support material may comprise metal, such as NiAl, ceramic, a cermet, or silicon or other metalloid. Typically, nanoparticles are disposed adjacent a surface of the support material. Nanostructures may be formed as anchored to nanoparticles that are adjacent the surface of the support material by heating the nano-catalysts and then exposing the nano-catalysts to an organic vapor. The nanostructures are typically single wall or multi-wall carbon nanotubes.

  2. Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Duty, C.; Jellison, D. G.E. P.; Joshi, P.

    2012-04-05

    In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

  3. Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang...

    Open Energy Info (EERE)

    Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New Sunshine Technology Jump to: navigation, search Name: Guiyang Polysource Silicon Co Ltd (Formerly Jiayuan...

  4. Design and Implementation of Silicon Nitride Valves for Heavy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Design and Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Poster presentation at the...

  5. SunShot Initiative Workshop on Silicon Photovoltaics | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SunShot Initiative held a workshop on silicon photovoltaics research directions beyond 2020 in conjunction with the NREL workshop on crystalline silicon solar cells and modules. ...

  6. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  7. ShaanXi Tianhong Silicon Industrial | Open Energy Information

    Open Energy Info (EERE)

    ShaanXi Tianhong Silicon Industrial Jump to: navigation, search Name: ShaanXi Tianhong Silicon Industrial Place: Shaanxi Province, China Product: Shaaxi-based polysilicon maker...

  8. Schmid Silicon Technology GmbH SST | Open Energy Information

    Open Energy Info (EERE)

    Schmid Silicon Technology GmbH SST Jump to: navigation, search Name: Schmid Silicon Technology GmbH (SST) Place: Freudenstadt, Germany Zip: D-72250 Sector: Solar Product:...

  9. Tianwei Sichuan Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    search Name: Tianwei Sichuan Silicon Co Ltd Place: Sichuan Province, China Product: A Chinese polysilicon manufacturer developing a 3000t silicon plant in Xinjin of Sichuan...

  10. Chengdu Jiayang Silicon Technology Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Jiayang Silicon Technology Co Ltd Place: Chengdu, Sichuan Province, China Product: Chinese monocrystalline silicon ingots and wafers manufacturer Coordinates: 30.67,...

  11. Glory Silicon Energy Zhenjiang Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Silicon Energy (Zhenjiang) Co Ltd Place: Yangzhong, Jiangsu Province, China Product: Chinese manufacturer of silicon ingots and PV wafers; ingots are only for in-house use....

  12. Silicon Nanostructure-based Technology for Next Generation Energy...

    Office of Environmental Management (EM)

    Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2013 DOE Hydrogen and Fuel Cells...

  13. Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure...

    Office of Environmental Management (EM)

    2: Silicon Nanostructure-based Technology for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure-based Technology for Next...

  14. Dawu Silicon Park Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Dawu Silicon Park Co Ltd Jump to: navigation, search Name: Dawu Silicon Park Co Ltd Place: Dawu County, Hubei Province, China Zip: 432800 Sector: Solar Product: Chinese polysilicon...

  15. GCL Solar Energy Technology Holdings formerly GCL Silicon aka...

    Open Energy Info (EERE)

    GCL Silicon aka Jiangsu Zhongneng Polysilicon Jump to: navigation, search Name: GCL Solar Energy Technology Holdings (formerly GCL Silicon, aka Jiangsu Zhongneng Polysilicon)...

  16. Fact Sheet: Award-Winning Silicon Carbide Power Electronics ...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Award-Winning Silicon Carbide Power Electronics (October 2012) Fact Sheet: Award-Winning Silicon Carbide Power Electronics (October 2012) Operating at high temperatures and with ...

  17. Vehicle Technologies Office Merit Review 2014: Silicon Nanowire...

    Broader source: Energy.gov (indexed) [DOE]

    and Peer Evaluation Meeting about silicon nanowire anodes for next generation energy storage. es126stefan2014p.pdf More Documents & Publications Silicon Nanostructure-based...

  18. Ningxia Sunshine Silicon Business Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Silicon Business Co Ltd Jump to: navigation, search Name: Ningxia Sunshine Silicon Business Co Ltd Place: Shizuishan, Ningxia Autonomous Region, China Product: A JV project company...

  19. Zhenjiang Huantai Silicon Science Technology Co Ltd | Open Energy...

    Open Energy Info (EERE)

    Huantai Silicon Science Technology Co Ltd Jump to: navigation, search Name: Zhenjiang Huantai Silicon Science & Technology Co Ltd Place: Yangzhou, Jiangsu Province, China Zip:...

  20. Leshan Ledian Tianwei Silicon Science and Technology Co Ltd ...

    Open Energy Info (EERE)

    Ledian Tianwei Silicon Science and Technology Co Ltd Jump to: navigation, search Name: Leshan Ledian Tianwei Silicon Science and Technology Co Ltd Place: Leshan, Sichuan Province,...

  1. Sichuan Xinguang Silicon Business Science Technology Co Ltd ...

    Open Energy Info (EERE)

    Xinguang Silicon Business Science Technology Co Ltd Jump to: navigation, search Name: Sichuan Xinguang Silicon Business Science & Technology Co Ltd Place: Leshan, Sichuan Province,...

  2. Graphene-silicon layered structures on single-crystalline Ir...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Graphene-silicon layered structures on single-crystalline Ir(111) thin films Prev Next Title: Graphene-silicon layered structures on single-crystalline...

  3. Inner Mongolia Shenzhou Silicon Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Shenzhou Silicon Co Ltd Jump to: navigation, search Name: Inner Mongolia Shenzhou Silicon Co Ltd Place: Hohhot, Inner Mongolia Autonomous Region, China Product: Huhhot-based...

  4. Inner Mongolia Jinyu Silicon Industry Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Jinyu Silicon Industry Co Ltd Jump to: navigation, search Name: Inner Mongolia Jinyu Silicon Industry Co Ltd Place: Wuhai City, Inner Mongolia Autonomous Region, China Zip: 16030...

  5. Sino American Silicon Products Inc SAS | Open Energy Information

    Open Energy Info (EERE)

    Sino American Silicon Products Inc SAS Jump to: navigation, search Name: Sino-American Silicon Products Inc (SAS) Place: Hsinchu, Taiwan, Taiwan Product: Taiwan-based manufacturer...

  6. Silicon Detectors at the ILC (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: Silicon Detectors at the ILC Citation Details In-Document Search Title: Silicon Detectors at the ILC You are accessing a document from the Department of Energy's ...

  7. Silicon Detectors at the ILC (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Conference: Silicon Detectors at the ILC Citation Details In-Document Search Title: Silicon Detectors at the ILC Authors: Brau, James E. ; Oregon U. ; Breidenbach, Martin ; SLAC ...

  8. Casimir Forces On A Silicon Micromechanical Chip (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Casimir Forces On A Silicon Micromechanical Chip Citation Details In-Document Search Title: Casimir Forces On A Silicon Micromechanical Chip Quantum fluctuations ...

  9. Low Cost, High Efficiency Tandem Silicon Solar Cells and LEDs...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    higher than those of simple multi or single crystalline silicon cells. While three junction non-silicon tandem solar cells have achieved unconcentrated efficiencies of up to...

  10. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore » silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  11. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    SciTech Connect (OSTI)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphous silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.

  12. Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

    SciTech Connect (OSTI)

    Wilking, S. Ebert, S.; Herguth, A.; Hahn, G.

    2013-11-21

    The degradation effect boron doped and oxygen-rich crystalline silicon materials suffer from under illumination can be neutralized in hydrogenated silicon by the application of a regeneration process consisting of a combination of slightly elevated temperature and carrier injection. In this paper, the influence of variations in short high temperature steps on the kinetics of the regeneration process is investigated. It is found that hotter and longer firing steps allowing an effective hydrogenation from a hydrogen-rich silicon nitride passivation layer result in an acceleration of the regeneration process. Additionally, a fast cool down from high temperature to around 550?°C seems to be crucial for a fast regeneration process. It is suggested that high cooling rates suppress hydrogen effusion from the silicon bulk in a temperature range where the hydrogenated passivation layer cannot release hydrogen in considerable amounts. Thus, the hydrogen content of the silicon bulk after the complete high temperature step can be increased resulting in a faster regeneration process. Hence, the data presented here back up the theory that the regeneration process might be a hydrogen passivation of boron-oxygen related defects.

  13. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  14. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  15. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  16. Process for producing dispersed particulate composite materials

    DOE Patents [OSTI]

    Henager, Jr., Charles H. (Richland, WA); Hirth, John P. (Viola, ID)

    1995-01-01

    This invention is directed to a process for forming noninterwoven dispersed particulate composite products. In one case a composite multi-layer film product comprises a substantially noninterwoven multi-layer film having a plurality of discrete layers. This noninterwoven film comprises at least one discrete layer of a first material and at least one discrete layer of a second material. In another case the first and second materials are blended together with each other. In either case, the first material comprises a metalloid and the second material a metal compound. At least one component of a first material in one discrete layer undergoes a solid state displacement reaction with at least one component of a second material thereby producing the requisite noninterwoven composite film product. Preferably, the first material comprises silicon, the second material comprises Mo.sub.2 C, the third material comprises SiC and the fourth material comprises MoSi.sub.2.

  17. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect (OSTI)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  18. Lithium aluminum/iron sulfide battery having lithium aluminum and silicon as negative electrode

    DOE Patents [OSTI]

    Gilbert, Marian (Flossmoor, IL); Kaun, Thomas D. (New Lenox, IL)

    1984-01-01

    A method of making a negative electrode, the electrode made thereby and a secondary electrochemical cell using the electrode. Silicon powder is mixed with powdered electroactive material, such as the lithium-aluminum eutectic, to provide an improved electrode and cell.

  19. Shock-wave strength properties of boron carbide and silicon carbide

    SciTech Connect (OSTI)

    Grady, D.E.

    1994-02-01

    Time-resolved velocity interferometry measurements have been made on boron carbide and silicon carbide ceramics to assess dynamic equation-of-state and strength properties of these materials. Hugoniot pecursor characteristics, and post-yield shock and release wave properties, indicated markedly different dynamic strength and flow behavior for the two carbides.

  20. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    SciTech Connect (OSTI)

    Arya, R.R.; Bennett, M.; Bradley, D.

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  1. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  2. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect (OSTI)

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  3. Lithium-drifted silicon detector with segmented contacts

    DOE Patents [OSTI]

    Tindall, Craig S.; Luke, Paul N.

    2006-06-13

    A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

  4. GENERAL@ELECTtiIC COMPINY

    Office of Legacy Management (LM)

    GENERAL@ELECTtiIC COMPINY ~9013 ~APPROVAL NO. 143 Article II, Section 8(b) PICHLAND, WASHINGTON .~. "ANFORD ATOMlC PlOD"CTS O*Ert*,ION ,. u/S; Atomic Energy Comisaion Hailfbrd operations Office Richland, Washington Attention: Mr. J. E. Travis, Manager Gentlemen: EXTRUSION OF URANIUM DIOXIDE FOR GENERAL ~ED&'RIC - APED The Atoinic Power Equipment Depart!++ of ~the The uranium dioxide necess :Material License No. C-3351. for establishing the value'of the.material will be developed

  5. Toward quantitative modeling of silicon phononic thermocrystals

    SciTech Connect (OSTI)

    Lacatena, V.; Haras, M.; Robillard, J.-F. Dubois, E.; Monfray, S.; Skotnicki, T.

    2015-03-16

    The wealth of technological patterning technologies of deca-nanometer resolution brings opportunities to artificially modulate thermal transport properties. A promising example is given by the recent concepts of 'thermocrystals' or 'nanophononic crystals' that introduce regular nano-scale inclusions using a pitch scale in between the thermal phonons mean free path and the electron mean free path. In such structures, the lattice thermal conductivity is reduced down to two orders of magnitude with respect to its bulk value. Beyond the promise held by these materials to overcome the well-known “electron crystal-phonon glass” dilemma faced in thermoelectrics, the quantitative prediction of their thermal conductivity poses a challenge. This work paves the way toward understanding and designing silicon nanophononic membranes by means of molecular dynamics simulation. Several systems are studied in order to distinguish the shape contribution from bulk, ultra-thin membranes (8 to 15 nm), 2D phononic crystals, and finally 2D phononic membranes. After having discussed the equilibrium properties of these structures from 300 K to 400 K, the Green-Kubo methodology is used to quantify the thermal conductivity. The results account for several experimental trends and models. It is confirmed that the thin-film geometry as well as the phononic structure act towards a reduction of the thermal conductivity. The further decrease in the phononic engineered membrane clearly demonstrates that both phenomena are cumulative. Finally, limitations of the model and further perspectives are discussed.

  6. Composite materials comprising two jonal functions and methods for making the same

    DOE Patents [OSTI]

    Fareed, Ali Syed (Newark, DE); Garnier, John Edward (Newark, DE); Schiroky, Gerhard Hans (Newark, DE); Kennedy, Christopher Robin (Newark, DE); Sonuparlak, Birol (Longmont, CO)

    2001-01-01

    The present invention generally relates to mechanisms for preventing undesirable oxidation (i.e., oxidation protection mechanisms) in composite bodies. The oxidation protection mechanisms include getterer materials which are added to the composite body which gather or scavenge undesirable oxidants which may enter the composite body. The getterer materials may be placed into at least a portion of the composite body such that any undesirable oxidant approaching, for example, a fiber reinforcement, would be scavenged by (e.g., reacted with) the getterer. The getterer materials) may form at least one compound which acts as a passivation layer, and/or is able to move by bulk transport (e.g., by viscous flow as a glassy material) to a crack, and sealing the crack, thereby further enhancing the oxidation protection of the composite body. One or more ceramic filler materials which serve as reinforcements may have a plurality of super-imposed coatings thereon, at least one of which coatings may function as or contain an oxidation protection mechanism. Specifically, a coating comprising boron nitride which has been engineered or modified to contain some silicon exhibits improved corrosion resistance, specifically to oxygen and moisture. The coated materials may be useful as reinforcing materials in high performance composites to provide improved mechanical properties such as fracture toughness. The present invention also relates to improved composites which incorporate these materials, and to their methods of manufacture.

  7. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    SciTech Connect (OSTI)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of in-service degradation. Examples include composite density, distribution of porosity, fiber-matrix bond character, uniformity of weave, physical damage, and joint quality at interface bonds.

  8. Material Misfits

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Issues submit Material Misfits How well nanocomposite materials align at their interfaces determines what properties they have, opening broad new avenues of materials-science...

  9. Porcelain enamel neutron absorbing material

    DOE Patents [OSTI]

    Iverson, Daniel C. (Aiken, SC)

    1990-01-01

    A porcelain enamel composition as a neutron absorbing material can be prepared of a major proportion by weight of a cadmium compound and a minor proportion of compounds of boron, lithium and silicon. These compounds in the form of a porcelain enamel coating or layer on several alloys has been found to be particularly effective in enhancing the nuclear safety of equipment for use in the processing and storage of fissile material. The composition of the porcelain enamel coating can be tailored to match the coefficient of thermal expansion of the equipment to be coated and excellent coating adhesion can be achieved.

  10. Porcelain enamel neutron absorbing material

    DOE Patents [OSTI]

    Iverson, D.C.

    1987-11-20

    A porcelain enamel composition as a neutron absorbing material can be prepared of a major proportion by weight of a cadmium compound and a minor proportion of compound of boron, lithium and silicon. These compounds in the form of a porcelain enamel coating or layer on several alloys has been found to be particularly effective in enhancing the nuclear safety of equipment for use in the processing and storage of fissile material. The composition of the porcelain enamel coating can be tailored to match the coefficient of thermal expansion of the equipment to be coated and excellent coating adhesion can be achieved. 2 figs.

  11. Montana Domestic Sewage Treatment Lagoons General Permit | Open...

    Open Energy Info (EERE)

    GuidanceSupplemental Material Abstract Example authorization of Domestic Sewage Treatment Lagoons General Permit. Author Montana Department of Environmental Quality -...

  12. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  13. Silicon-Nanowire Based Lithium Ion Batteries for Vehicles With Double the Energy Density

    SciTech Connect (OSTI)

    Stefan, Ionel; Cohen, Yehonathan

    2015-03-31

    Amprius researched and developed silicon nanowire anodes. Amprius then built and delivered high-energy lithium-ion cells that met the project’s specific energy goal and exceeded the project’s energy density goal. But Amprius’ cells did not meet the project’s cycle life goal, suggesting additional manufacturing process development is required. With DOE support, Amprius developed a new anode material, silicon, and a new anode structure, nanowire. During the project, Amprius also began to develop a new multi-step manufacturing process that does not involve traditional anode production processes (e.g. mixing, drying and calendaring).

  14. A = 5 General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 General Tables The General Table for 5H is subdivided into the following categories: Cluster Model Hypernuclei Model Calculations Photodisintegration Pions The General Table for...

  15. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, A.V.; Balooch, M.; Moalem, M.

    1999-01-19

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

  16. Process for producing amorphous and crystalline silicon nitride

    DOE Patents [OSTI]

    Morgan, P.E.D.; Pugar, E.A.

    1985-11-12

    A process for producing amorphous or crystalline silicon nitride is disclosed which comprises reacting silicon disulfide ammonia gas at elevated temperature. In a preferred embodiment silicon disulfide in the form of whiskers'' or needles is heated at temperature ranging from about 900 C to about 1,200 C to produce silicon nitride which retains the whisker or needle morphological characteristics of the silicon disulfide. Silicon carbide, e.g. in the form of whiskers, also can be prepared by reacting substituted ammonia, e.g. methylamine, or a hydrocarbon containing active hydrogen-containing groups, such as ethylene, with silicon disulfide, at elevated temperature, e.g. 900 C. 6 figs.

  17. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  18. On silicon group elements ejected by supernovae type IA

    SciTech Connect (OSTI)

    De, Soma; Timmes, F. X. [School of Earth and Space Exploration, Arizona State University, Tempe, AZ (United States); Brown, Edward F. [Joint Institute for Nuclear Astrophysics, University of Notre Dame, IN 46556 (United States); Calder, Alan C. [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY (United States); Townsley, Dean M. [Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL (United States); Athanassiadou, Themis [Swiss National Supercomputing Centre, Via Trevano 131, 6900 Lugano (Switzerland); Chamulak, David A. [Physics Division, Argonne National Laboratory, Argonne, IL (United States); Hawley, Wendy [Laboratoire d'Astrophysique de Marseille, Marseille cedex 13 F-13388 (France); Jack, Dennis, E-mail: somad@asu.edu [Departamento de Astronomía, Universidad de Guanajuato, Apartado Postal 144, 36000 Guanajuato (Mexico)

    2014-06-01

    There is evidence that the peak brightness of a Type Ia supernova is affected by the electron fraction Y {sub e} at the time of the explosion. The electron fraction is set by the aboriginal composition of the white dwarf and the reactions that occur during the pre-explosive convective burning. To date, determining the makeup of the white dwarf progenitor has relied on indirect proxies, such as the average metallicity of the host stellar population. In this paper, we present analytical calculations supporting the idea that the electron fraction of the progenitor systematically influences the nucleosynthesis of silicon group ejecta in Type Ia supernovae. In particular, we suggest the abundances generated in quasi-nuclear statistical equilibrium are preserved during the subsequent freeze-out. This allows potential recovery of Y {sub e} at explosion from the abundances recovered from an observed spectra. We show that measurement of {sup 28}Si, {sup 32}S, {sup 40}Ca, and {sup 54}Fe abundances can be used to construct Y {sub e} in the silicon-rich regions of the supernovae. If these four abundances are determined exactly, they are sufficient to recover Y {sub e} to 6%. This is because these isotopes dominate the composition of silicon-rich material and iron-rich material in quasi-nuclear statistical equilibrium. Analytical analysis shows the {sup 28}Si abundance is insensitive to Y {sub e}, the {sup 32}S abundance has a nearly linear trend with Y {sub e}, and the {sup 40}Ca abundance has a nearly quadratic trend with Y {sub e}. We verify these trends with post-processing of one-dimensional models and show that these trends are reflected in the model's synthetic spectra.

  19. Transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1995-01-01

    A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

  20. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  1. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi (Ithaca, NY); Baik, Sunggi (Ithaca, NY)

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  2. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1985-11-12

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  3. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  4. Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates

    SciTech Connect (OSTI)

    Mauk, M.G.; Feyock, B.W.; Hall, R.B.; Cavanaugh, K.D.; Cotter, J.E.

    1997-12-31

    The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.

  5. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

    SciTech Connect (OSTI)

    Veith-Wolf, Boris; Wang, Jianhui; Hannu-Kuure, Milja; Chen, Ning; Hadzic, Admir; Williams, Paul; Leivo, Jarkko; Karkkainen, Ari; Schmidt, Jan

    2015-02-02

    We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

  6. Anisotropy and crystal orientation of silicon--application to the modeling of a bent mirror

    SciTech Connect (OSTI)

    Zhang Lin

    2010-06-23

    Matrix formula and MATLAB algorithm are proposed to calculate the stiffness coefficient matrix C, the Young's modulus, shear modulus and Poisson ratio for the silicon crystal in any orientation. Results for Si(110) and Si(311) are given as an example. The anisotropic material properties of the silicon have been used in the mirror width profile optimization for the nano-imaging end-station ID22NI at the ESRF. As the Si(110) is used as the substrate of this multilayer coated KB mirror, the silicon crystal axis [0 0 1] is proposed to orient to the mirror axis. This is the case to have low stress in the mirror and low bending forces from actuators.

  7. Stable, high-efficiency amorphous silicon solar cells with low hydrogen content

    SciTech Connect (OSTI)

    Fortmann, C.M.; Hegedus, S.S. )

    1992-12-01

    Results and conclusions obtained during a research program of the investigation of amorphous silicon and amorphous silicon based alloy materials and solar cells fabricated by photo-chemical vapor and glow discharge depositions are reported. Investigation of the effects of the hydrogen content in a-si:H i-layers in amorphous silicon solar cells show that cells with lowered hydrogen content i-layers are more stable. A classical thermodynamic formulation of the Staebler-Wronski effect has been developed for standard solar cell operating temperatures and illuminations. Methods have been developed to extract a lumped equivalent circuit from the current voltage characteristic of a single junction solar cell in order to predict its behavior in a multijunction device.

  8. Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

    SciTech Connect (OSTI)

    Muzha, A.; Fuchs, F.; Simin, D.; Astakhov, G. V.; Tarakina, N. V.; Trupke, M.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.; Dyakonov, V.; and others

    2014-12-15

    Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600?nm down to 60?nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical, and biological processes.

  9. Strongly enhanced tunable photoluminescence in polymorphous silicon carbon thin films via excitation-transfer mechanism

    SciTech Connect (OSTI)

    Wang Junzhuan; Suendo, V.; Abramov, A.; Yu Linwei; Roca i Cabarrocas, Pere

    2010-11-29

    Here, we investigate the enhanced tunable photoluminescence (PL) of hydrogenated polymorphous silicon carbon (pm-Si{sub 1-x}C{sub x}:H) thin films fabricated in a plasma enhanced chemical vapor deposition system. The silicon nanocrystal (nc-Si) inclusions are formed during gas-phase nucleation and incorporated in the hydrogenated amorphous silicon carbon (a-SiC:H) matrix. The nc-Si provides high-quality recombination centers for the photogenerated carriers in the pm-Si{sub 1-x}C{sub x}:H material, while the a-SiC:H matrix plays a role of sensitizer. We elucidate and provide experimental evidence for this excitation-transfer mechanism. Strongly enhanced PL performance can be achieved by effective matrix passivation that favors a diffusion-driven carrier recombination in the nc-Si centers.

  10. 8C General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C General Tables The General Table for 8C is subdivided into the following categories: Reviews Other Theoretical Work

  11. 6Be General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    6Be General Table The General Table for 6Be is subdivided into the following categories: Cluster Model Model Calculations...

  12. Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

    2014-12-21

    In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K-1 m-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured,more » which all reveal a significant, ≈25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ≈25 W K-1 m-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ≈ 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.« less

  13. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  14. Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

    2014-12-21

    In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K-1 m-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured, which all reveal a significant, ?25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ?25 W K-1 m-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ? 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.

  15. Synthesis of metal silicide at metal/silicon oxide interface by electronic excitation

    SciTech Connect (OSTI)

    Lee, J.-G.; Nagase, T.; Yasuda, H.; Mori, H.

    2015-05-21

    The synthesis of metal silicide at the metal/silicon oxide interface by electronic excitation was investigated using transmission electron microscopy. A platinum silicide, ?-Pt{sub 2}Si, was successfully formed at the platinum/silicon oxide interface under 25–200?keV electron irradiation. This is of interest since any platinum silicide was not formed at the platinum/silicon oxide interface by simple thermal annealing under no-electron-irradiation conditions. From the electron energy dependence of the cross section for the initiation of the silicide formation, it is clarified that the silicide formation under electron irradiation was not due to a knock-on atom-displacement process, but a process induced by electronic excitation. It is suggested that a mechanism related to the Knotek and Feibelman mechanism may play an important role in silicide formation within the solid. Similar silicide formation was also observed at the palladium/silicon oxide and nickel/silicon oxide interfaces, indicating a wide generality of the silicide formation by electronic excitation.

  16. 6N Silicon Inc | Open Energy Information

    Open Energy Info (EERE)

    Inc Jump to: navigation, search Name: 6N Silicon Inc Place: Mississauga, Ontario, Canada Zip: L5T 1E6 Sector: Solar Product: Canadian manufactuer of upgraded metallurgical...

  17. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  18. Synthesis and characterization of silicon phthalocyanines bearing...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Authors: Bergkamp, J. J., Sherman, B. D., Mario-Ochoa, E., Palacios, R. E., Cosa, G., Moore, T. A., Gust, D., and Moore, A. L. Title: Synthesis and characterization of silicon...

  19. Apparatus for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  20. Method for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  1. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect (OSTI)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  2. University Crystalline Silicon Photovoltaics Research and Development

    SciTech Connect (OSTI)

    Ajeet Rohatgi; Vijay Yelundur; Abasifreke Ebong; Dong Seop Kim

    2008-08-18

    The overall goal of the program is to advance the current state of crystalline silicon solar cell technology to make photovoltaics more competitive with conventional energy sources. This program emphasizes fundamental and applied research that results in low-cost, high-efficiency cells on commercial silicon substrates with strong involvement of the PV industry, and support a very strong photovoltaics education program in the US based on classroom education and hands-on training in the laboratory.

  3. Adhesion Impact of Silicone Contamination during Encapsulation.

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Adhesion Impact of Silicone Contamination during Encapsulation. Citation Details In-Document Search Title: Adhesion Impact of Silicone Contamination during Encapsulation. Abstract not provided. Authors: Grillet, Anne Mary ; Barringer, David Alan ; Ohlhausen, James Anthony ; Brumbach, Michael Todd ; Brooks, Carlton F. ; Tandon, Rajan ; Roach, Robert Allen Publication Date: 2014-06-01 OSTI Identifier: 1146813 Report Number(s): SAND2014-4736C 520488 DOE Contract

  4. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect (OSTI)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

  5. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  6. Reversibly immobilized biological materials in monolayer films on electrodes

    DOE Patents [OSTI]

    Weaver, Paul F. (Golden, CO); Frank, Arthur J. (Lakewood, CO)

    1993-01-01

    Methods and techniques are described for reversibly binding charged biological particles in a fluid medium to an electrode surface. The methods are useful in a variety of applications. The biological materials may include microbes, proteins, and viruses. The electrode surface may consist of reversibly electroactive materials such as polyvinylferrocene, silicon-linked ferrocene or quinone.

  7. Reversibly immobilized biological materials in monolayer films on electrodes

    DOE Patents [OSTI]

    Weaver, P.F.; Frank, A.J.

    1993-05-04

    Methods and techniques are described for reversibly binding charged biological particles in a fluid medium to an electrode surface. The methods are useful in a variety of applications. The biological materials may include microbes, proteins, and viruses. The electrode surface may consist of reversibly electroactive materials such as polyvinylferrocene, silicon-linked ferrocene or quinone.

  8. Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2014-01-14

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  9. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G. (Gettysburg, PA)

    2011-11-01

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  10. Propulsion Materials

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Propulsion Materials FY 2013 Progress Report ii CONTENTS INTRODUCTION ....................................................................................................................................... 1 Project 18516 - Materials for H1ybrid and Electric Drive Systems ...................................................... 4 Agreement 19201 - Non-Rare Earth Magnetic Materials ............................................................................ 4 Agreement 23278 - Low-Cost

  11. Silicon-based nanoenergetic composites

    SciTech Connect (OSTI)

    Asay, Blaine; Son, Steven; Mason, Aaron; Yarrington, Cole; Cho, K Y; Gesner, J; Yetter, R A

    2009-01-01

    Fundamental combustion properties of silicon-based nano-energetic composites was studied by performing equilibrium calculations, 'flame tests', and instrumented burn-tube tests. That the nominal maximum flame temperature and for many Si-oxidizer systems is about 3000 K, with exceptions. Some of these exceptions are Si-metal oxides with temperatures ranging from 2282 to 2978 K. Theoretical maximum gas production of the Si composites ranged from 350-6500 cm{sup 3}/g of reactant with NH{sub 4}ClO{sub 4} - Si producing the most gas at 6500 cm{sup 3}/g and Fe{sub 2}O{sub 3} producing the least. Of the composites tested NH{sub 4}ClO{sub 4} - Si showed the fastest burning rates with the fastest at 2.1 km/s. The Si metal oxide burning rates where on the order of 0.03-75 mls the slowest of which was nFe{sub 2}O{sub 3} - Si.

  12. Shipping Materials | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shipping Materials General Users are not permitted to transport hazardous material on the Argonne site or to arrange for shipment directly to the CNM. Hazardous materials must be processed through Argonne's hazardous materials receiving area. Inbound Shipments Before you ship anything to the CNM, you must notify the User Office and your CNM contact. Nonhazardous Material To ensure that samples and equipment that you ship to the CNM gets here without unnecessary delays, address your shipments as

  13. Materials Science

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Science /science-innovation/_assets/images/icon-science.jpg Materials Science National security depends on science and technology. The United States relies on Los Alamos National Laboratory for the best of both. No place on Earth pursues a broader array of world-class scientific endeavors. Materials Physics and Applications» Materials Science and Technology» Institute for Materials Science» Materials Science Rob Dickerson uses a state-of-the-art transmission electron microscope at

  14. Engineering of silicon/HfO{sub 2} interface by variable energy proton irradiation

    SciTech Connect (OSTI)

    Maurya, Savita Maringanti, Radhakrishna; Tribedi, L. C.

    2014-08-18

    Surfaces and interfaces between materials are of paramount importance for various phenomena, such as painting a house, catalyst driven chemical reactions, intricate life processes, corrosion of materials, and fabrication of various semiconductor devices. Interface of silicon or other such substrates with any of the oxides has profound effect on the performance of metal oxide field effect transistors and other similar devices. Since a surface is an abrupt termination of a periodic crystal, surface atoms will have some unsaturated valence electrons and these unsaturated bonds at the semiconductor surface make it chemically highly reactive. Other than annealing, there is not much that can be done to manage these unsaturated bonds. This study was initiated to explore the possibility of repairing these unsaturated dangling bonds that are formed at the silicon and oxide interface during the deposition of oxide layer above silicon, by the use of proton irradiation. In order to improve the interface characteristics, we present a method to modify the interface of silicon and hafnium dioxide after its fabrication, through proton irradiation. Results of the study are promising and probably this method might be used along with other methods such as annealing to modify the interface, after its fabrication.

  15. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect (OSTI)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  16. Irradiation and annealing of p-type silicon carbide

    SciTech Connect (OSTI)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ? 1.5 × 10{sup 18} cm{sup ?3} occurs at an irradiation dose of ?1.1 × 10{sup 16} cm{sup ?2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ?1000°C. The conductivity is almost completely restored at T ? 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  17. Reference Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Materials Reference Materials Large Scale Computing and Storage Requirements for Biological and Environmental Research May 7-8, 2009 Invitation Workshop Invitation Letter...

  18. Reference Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Materials Reference Materials Large Scale Computing and Storage Requirements for Basic Energy Sciences February 9-10, 2010 Official DOE Invitation Workshop Invitation...

  19. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  20. 7He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 7He is subdivided into the following categories: Experimental Theoretical Model Calculations Hypernuclei and Mesons Pions

  1. 9He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 9He is subdivided into the following categories: Shell Model Other Model Calculations Theoretical

  2. 5He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 5He is subdivided into the following categories: Ground State Properties Theoretical Special States Model Discussions Shell Model Cluster...

  3. 6He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    He General Table The General Table for 6He is subdivided into the following categories: Ground State Properties Theoretical Special States Shell Model Cluster and alpha-particle...

  4. General | Open Energy Information

    Open Energy Info (EERE)

    General Jump to: navigation, search Informacin y Documentos Herramientas y Modelos <> Estadsticas de Energas Renovables Volver Pgina principal General banner.jpg Retrieved...

  5. 5H General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    H General Table The General Table for 5H is subdivided into the following categories: Cluster Model Hypernuclei Model Calculations Photodisintegration Pions...

  6. 10He General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    General Table The General Table for 10He is subdivided into the following categories: Theoretical Shell Model Cluster Model Other Models Special States Electromagnetic Transitions...

  7. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  8. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, Vinod K. (Lexington, MA)

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  9. Light-trapped interconnected, Silicon-Film{trademark} modules. Annual technical status report, 18 November 1995--18 November 1996

    SciTech Connect (OSTI)

    Hall, R.B.; Rand, J.A.; Cotter, J.E.; Ford, D.H.

    1997-02-01

    AstroPower is developing a module-manufacturing technology based on a film-silicon technology. AstroPower, as a Technology Partner in the Thin-Film PV Partnership, is employing its Silicon-Film{trademark} technology to develop an advanced thin-silicon-based product. This module will combine the design and process features of the most advanced thin-silicon solar cells with light-trapping. These cells will be integrated into a low-cost interconnected array. During the second year of the 3-year project, AstroPower`s emphasis was on developing key submodule fabrication processes. Key results of the work include developing a new thin-film growth concept process based on attaching the low-cost substrate to the thin silicon layer after film growth; developing a new technique to achieve light-trapping in thin layers of silicon based on pigmented high-temperature glass materials; and developing key submodule fabrication processes, including contact grid design, subelement isolation, and screen-printed interconnection.

  10. Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

    SciTech Connect (OSTI)

    G. G. Loomis; C. M. Miller; J. A. Giansiracusa; R. Kimmel; S. V. Prewett

    2000-01-01

    This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test.

  11. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    SciTech Connect (OSTI)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-12-31

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p{sup {minus}} porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n{sup +} and p{sup +} porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

  12. Liquid Silane Routes to Electronic Materials

    SciTech Connect (OSTI)

    Douglas L. Schulz; Xuliang Dai; Kendric J. Nelson; Konstantin Pokhodnya; Justin M. Hoey; Iskander S. Akhatov; Orven F. Swenson; Jeremiah Smith; John Lovaasen; Matt Robinson; Scott Payne; Philip R. Boudjouk

    2008-12-04

    New chemistries based upon liquid cyclohexasilane (Si{sub 6}H{sub 12} or CHS) have been used as precursors to silicon-containing electronic materials. Spin-coating of CHS-based inks with subsequent UV light and/or thermal treatment yielded amorphous silicon (a-Si:H) films. While initial ink chemistries gave a-Si:H with high resistivity (i.e., > 10{sup 6} {Omega}.cm), several doping strategies are under development to address this limitation. In this contribution, the current status of solution processed rectifying diodes and field effect transistors fabricated from CHS-based inks will be presented. Additionally, a new printing approach termed collimated aerosol beam direct write (CAB-DW{sup TM}) was developed that allows the deposition of printed Ag lines 5 {mu}m in width. A status update will be given where CHS-based inks have been used to CAB-DW silicon-based features with linewidths <10 {mu}m. Assuming silicon thin film materials with good electrical properties will be developed, there may be significant cost advantages associated with the ability to controllably deposit the semiconductor in a metered fashion.

  13. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect (OSTI)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500 nm, and the range of dopant densities between ∼10{sup 18} and 3 × 10{sup 20} cm{sup −3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  14. material protection

    National Nuclear Security Administration (NNSA)

    %2A en Office of Weapons Material Protection http:www.nnsa.energy.govaboutusourprogramsnonproliferationprogramofficesinternationalmaterialprotectionandcooperation-1

  15. material protection

    National Nuclear Security Administration (NNSA)

    %2A en Office of Weapons Material Protection http:nnsa.energy.govaboutusourprogramsnonproliferationprogramofficesinternationalmaterialprotectionandcooperation-1

  16. Materials Scientist

    Broader source: Energy.gov [DOE]

    Alternate Title(s):Materials Research Engineer; Metallurgical/Chemical Engineer; Product Development Manager;

  17. Silicon ball grid array chip carrier

    DOE Patents [OSTI]

    Palmer, David W.; Gassman, Richard A.; Chu, Dahwey

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  18. Crystallization and doping of amorphous silicon on low temperature plastic

    DOE Patents [OSTI]

    Kaschmitter, James L.; Truher, Joel B.; Weiner, Kurt H.; Sigmon, Thomas W.

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  19. Crystallization and doping of amorphous silicon on low temperature plastic

    DOE Patents [OSTI]

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  20. Method to fabricate silicon chromatographic column comprising fluid ports

    DOE Patents [OSTI]

    Manginell, Ronald P.; Frye-Mason, Gregory C.; Heller, Edwin J.; Adkins, Douglas R.

    2004-03-02

    A new method for fabricating a silicon chromatographic column comprising through-substrate fluid ports has been developed. This new method enables the fabrication of multi-layer interconnected stacks of silicon chromatographic columns.

  1. Process for manufacture of semipermeable silicon nitride membranes

    DOE Patents [OSTI]

    Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

    2003-12-09

    A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

  2. Harmful Shunting Mechanisms Found in Silicon Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    Scientists developed near-field optical microscopy for imaging electrical breakdown in solar cells and identified critical electrical breakdown mechanisms operating in industrial silicon and epitaxial silicon solar cells.

  3. Overview of Silicon Detectors in STAR: Present and Future

    SciTech Connect (OSTI)

    Kabana, Sonia; Collaboration: The SVT, SSD and HFT detector groups of the STAR experiment at RHIC

    2011-12-13

    The STAR experiment at RHIC aims to study the QCD phase transition and the origin of the spin of the proton. Its main detector for charged particle track reconstruction is a Time Projection Chamber, which has been supplemented with a silicon detector involving two different technologies, in particular double-sided silicon strip and silicon drift technology. STAR is preparing now for a new Silicon Vertex Detector, using double-sided silicon strip, single-sided silicon strip-pads, and CMOS monolithic active pixel sensors technology, planned to take data in 2014. We give an overview of the design, calibration and performances of the silicon detectors used by the STAR experiment in the past and the expected performances of the future silicon detector upgrade.

  4. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electron microscopes at ALS Beamlines 7.3.1 and 11.0.1. From Sand to Processor Modern electronic integrated circuits are made of silicon. Silicon is the most abundant element...

  5. Huiwan Silicon Park Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    Huiwan Silicon Park Co Ltd Jump to: navigation, search Name: Huiwan Silicon Park Co Ltd Place: Baishan, Jilin Province, China Product: A foreign-invested Chinese company plans to...

  6. Japan Solar Silicon Co Ltd JSS | Open Energy Information

    Open Energy Info (EERE)

    Solar Silicon Co Ltd JSS Jump to: navigation, search Name: Japan Solar Silicon Co Ltd (JSS) Place: Tokyo, Japan Sector: Solar Product: A JV company between Chisso, Nippon Mining...

  7. Joining of porous silicon carbide bodies

    DOE Patents [OSTI]

    Bates, Carl H. (Worcester, MA); Couhig, John T. (Worcester, MA); Pelletier, Paul J. (Thompson, CT)

    1990-05-01

    A method of joining two porous bodies of silicon carbide is disclosed. It entails utilizing an aqueous slip of a similar silicon carbide as was used to form the porous bodies, including the sintering aids, and a binder to initially join the porous bodies together. Then the composite structure is subjected to cold isostatic pressing to form a joint having good handling strength. Then the composite structure is subjected to pressureless sintering to form the final strong bond. Optionally, after the sintering the structure is subjected to hot isostatic pressing to further improve the joint and densify the structure. The result is a composite structure in which the joint is almost indistinguishable from the silicon carbide pieces which it joins.

  8. Electrically tunable hot-silicon terahertz attenuator

    SciTech Connect (OSTI)

    Wang, Minjie; Vajtai, Robert; Ajayan, Pulickel M.; Kono, Junichiro

    2014-10-06

    We have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 10{sup 3}. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ?550?K, with the corresponding free-carrier density adjusted between ?10{sup 11?}cm{sup ?3} and ?10{sup 17?}cm{sup ?3}. This “hot-silicon”-based terahertz attenuator works most effectively at 450–550?K (corresponding to a DC voltage variation of only ?7?V) and completely shields terahertz radiation above 550?K in a frequency range of 0.1–2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.

  9. Transistors using crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-05-09

    A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

  10. Silicon Valley Power- Residential Energy Efficiency Rebate Program

    Broader source: Energy.gov [DOE]

    Silicon Valley Power offers rebates to residential customers for the purchase of a variety of energy efficient products including:

  11. Predicting fracture in micron-scale polycrystalline silicon MEMS...

    Office of Scientific and Technical Information (OSTI)

    United States Language: English Subject: 42 ENGINEERING; CRACKS; MICROELECTRONIC CIRCUITS; SILICON; TENSILE PROPERTIES; FAILURE MODE ANALYSIS Polycrystalline;...

  12. Photovoltaic Crystalline Silicon Cell Basics | Department of Energy

    Energy Savers [EERE]

    Crystalline Silicon Cell Basics Photovoltaic Crystalline Silicon Cell Basics August 20, 2013 - 2:00pm Addthis To separate electrical charges, crystalline silicon cells must have a built-in electric field. Light shining on crystalline silicon may free electrons within the crystal lattice, but for these electrons to do useful work-such as provide electricity to a light bulb-they must be separated and directed into an electrical circuit. PV Semiconductors To create an electric field within a

  13. Lobbyist Disclosure Form - Silicon Valley | Department of Energy

    Office of Environmental Management (EM)

    Silicon Valley Lobbyist Disclosure Form - Silicon Valley Jonathan Silver, Energy Department executive director loans program, gave Colleen Quinn, Silicon Valley Leadership Group vice president of government relations and public policy, a broad overview of the work done by the LPO, and discussed the possible future of clean energy investment. PDF icon Lobbyist Disclosure Form - Silicon Valley.pdf More Documents & Publications Lobbyist Disclosure Form - AltEn Lobbyist Disclosure Form - First

  14. Rear surface spallation on single-crystal silicon in nanosecond laser micromachining

    SciTech Connect (OSTI)

    Ren, Jun; Orlov, Sergei S.; Hesselink, Lambertus

    2005-05-15

    Rear surface spallation of single-crystal silicon under 5-ns laser pulse ablation at intensities of 0.6-60 GW/cm{sup 2} is studied through postablation examination of the ablated samples. The spallation threshold energy and the spallation depth's dependences on the energy and target thickness are measured. From the linear relation between the spallation threshold energy and the target thickness, an estimation of the material spall strength around 1.4 GPa is obtained, in reasonable agreement with the spall strength estimation of 0.8-1.2 GPa at a strain rate of 10{sup 7} s{sup -1} using Grady's model for brittle materials. The experiment reveals the internal fracturing process over an extended zone in silicon, which is controlled by the competition between the shock pressure load and the laser ablation rate. The qualities of the laser microstructuring and micromachining results are greatly improved by using an acoustic impedance matching approach.

  15. Institute for Materials Science

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Science Institute for Materials Science x

  16. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, John M. (Albuquerque, NM)

    1992-01-01

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  17. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, John M. (Albuquerque, NM)

    1993-01-01

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  18. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, J.M.

    1993-04-20

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  19. New Computer Model Pinpoints Prime Materials for Carbon Capture

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Computer Model Pinpoints Prime Materials for Carbon Capture New Computer Model Pinpoints Prime Materials for Carbon Capture July 17, 2012 NERSC Contact: Linda Vu, lvu@lbl.gov, +1 510 495 2402 UC Berkeley Contact: Robert Sanders, rsanders@berkeley.edu zeolite350.jpg One of the 50 best zeolite structures for capturing carbon dioxide. Zeolite is a porous solid made of silicon dioxide, or quartz. In the model, the red balls are oxygen, the tan balls are silicon. The blue-green area is where

  20. Composit, Nanoparticle-Based Anode material for Li-ion Batteries Applied in Hybrid Electric (HEV's)

    SciTech Connect (OSTI)

    Dr. Malgorzata Gulbinska

    2009-08-24

    Lithium-ion batteries are promising energy storage devices in hybrid and electric vehicles with high specific energy values ({approx}150 Wh/kg), energy density ({approx}400 Wh/L), and long cycle life (>15 years). However, applications in hybrid and electric vehicles require increased energy density and improved low-temperature (<-10 C) performance. Silicon-based anodes are inexpensive, environmentally benign, and offer excellent theoretical capacity values ({approx}4000 mAh/g), leading to significantly less anode material and thus increasing the overall energy density value for the complete battery (>500 Wh/L). However, tremendous volume changes occur during cycling of pure silicon-based anodes. The expansion and contraction of these silicon particles causes them to fracture and lose electrical contact to the current collector ultimately severely limiting their cycle life. In Phase I of this project Yardney Technical Products, Inc. proposed development of a carbon/nano-silicon composite anode material with improved energy density and silicon's cycleability. In the carbon/nano-Si composite, silicon nanoparticles were embedded in a partially-graphitized carbonaceous matrix. The cycle life of anode material would be extended by decreasing the average particle size of active material (silicon) and by encapsulation of silicon nanoparticles in a ductile carbonaceous matrix. Decreasing the average particle size to a nano-region would also shorten Li-ion diffusion path and thus improve rate capability of the silicon-based anodes. Improved chemical inertness towards PC-based, low-temperature electrolytes was expected as an additional benefit of a thin, partially graphitized coating around the active electrode material.

  1. Liquid phase sintering of silicon carbide

    DOE Patents [OSTI]

    Cutler, R.A.; Virkar, A.V.; Hurford, A.C.

    1989-05-09

    Liquid phase sintering is used to densify silicon carbide based ceramics using a compound comprising a rare earth oxide and aluminum oxide to form liquids at temperatures in excess of 1,600 C. The resulting sintered ceramic body has a density greater than 95% of its theoretical density and hardness in excess of 23 GPa. Boron and carbon are not needed to promote densification and silicon carbide powder with an average particle size of greater than one micron can be densified via the liquid phase process. The sintered ceramic bodies made by the present invention are fine grained and have secondary phases resulting from the liquid phase. 4 figs.

  2. Ultralow-Power Silicon Microphotonic Communications Platform

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ultralow-Power Silicon Microphotonic Communications Platform 1 R&D 100 Entry Ultralow-Power Silicon Microphotonic Communications Platform 2 R&D 100 Entry Submitting Organization Sandia National Laboratories P. O. Box 5800 Albuquerque New Mexico 87185-1082 USA Michael R. Watts Phone: (505) 284-9616 Fax: (505) 284-7690 mwatts@sandia.gov AFFIRMATION: I affirm that all information submitted as a part of, or supplemental to, this entry is a fair and accurate representation of this product.

  3. Silicon metal-semiconductor-metal photodetector

    DOE Patents [OSTI]

    Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

    1997-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  4. Silicon metal-semiconductor-metal photodetector

    DOE Patents [OSTI]

    Brueck, Steven R. J. (Albuquerque, NM); Myers, David R. (Albuquerque, NM); Sharma, Ashwani K. (Albuquerque, NM)

    1995-01-01

    Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.

  5. Silicon fiber with p-n junction

    SciTech Connect (OSTI)

    Homa, D.; Cito, A.; Pickrell, G.; Hill, C.; Scott, B.

    2014-09-22

    In this study, we fabricated a p-n junction in a fiber with a phosphorous doped silicon core and fused silica cladding. The fibers were fabricated via a hybrid process of the core-suction and melt-draw techniques and maintained overall diameters ranging from 200 to 900??m and core diameters of 20–800??m. The p-n junction was formed by doping the fiber with boron and confirmed via the current-voltage characteristic. The demonstration of a p-n junction in a melt-drawn silicon core fiber paves the way for the seamless integration of optical and electronic devices in fibers.

  6. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  7. Silicon nitride ceramic having high fatigue life and high toughness

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  8. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, Richard A. (Powell, TN)

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  9. Method For Passivating Crystal Silicon Surfaces - Energy Innovation Portal

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Solar Photovoltaic Solar Photovoltaic Find More Like This Return to Search Method For Passivating Crystal Silicon Surfaces National Renewable Energy Laboratory Contact NREL About This Technology Publications: PDF Document Publication Silicon Surface and Heterojunction Interface Passivation Studies by Lifetime Measurements (395 KB) PDF Document Publication High-Throughput Approaches to Optimization of Crystal Silicon Surface Passivation and Heterojunction Solar Cells (837 KB) Technology Marketing

  10. Method to fabricate multi-level silicon-based microstructures via use of an etching delay layer

    DOE Patents [OSTI]

    Manginell, Ronald P.; Schubert, W. Kent; Shul, Randy J.

    2005-08-16

    New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Structures having features with different depth can be formed thereby in a single etching step.

  11. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect (OSTI)

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at ? = 532 nm (I{sub cl} ? 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at ? = 1064 nm (I{sub cl} ? 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  12. Dynamic Mechanical Thermal Analysis of Virgin TR-55 Silicone Rubber

    SciTech Connect (OSTI)

    Small IV, W; Wilson, T S

    2009-10-09

    Dynamic mechanical thermal analysis (DMTA) of virgin TR-55 silicone rubber specimens was conducted. Dynamic frequency/temperature sweep tests were conducted over the ranges 0.1-100 rad/s and 30-100 C using a parallel plate test geometry. A strain of 0.2% was used, which was near the upper limit of the linear viscoelastic region of the material based on initial dynamic strain sweep tests. Master curves of G{prime} and G{double_prime} as a function of frequency were generated using time-temperature superposition (horizontal shift with initial vertical correction). The activation energy calculated from an Arrhenius fit to the horizontal shift factors was 178-355 kJ/mol. The calculated percent load retention at {approx}50 years was 61-68%.

  13. Metal catalyst technique for texturing silicon solar cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

    2001-01-01

    Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

  14. Final Report: Stability and Novel Properties of Magnetic Materials and

    Office of Scientific and Technical Information (OSTI)

    Ferromagnet / Insulator Interfaces (Technical Report) | SciTech Connect Technical Report: Final Report: Stability and Novel Properties of Magnetic Materials and Ferromagnet / Insulator Interfaces Citation Details In-Document Search Title: Final Report: Stability and Novel Properties of Magnetic Materials and Ferromagnet / Insulator Interfaces We report investigations of the synthesis, structure, and properties of new materials for spintronic applications integrated onto silicon substrates.

  15. Development of Spintronic Bandgap Materials (Technical Report) | SciTech

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connect Technical Report: Development of Spintronic Bandgap Materials Citation Details In-Document Search Title: Development of Spintronic Bandgap Materials The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for "spintronics bandgap materials". Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy.

  16. Reference Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Materials Reference Materials Large Scale Computing and Storage Requirements for Basic Energy Sciences February 9-10, 2010 Official DOE Invitation Workshop Invitation Letter from DOE Associate Directors Last edited: 2016-02-01 08:07:17

  17. Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-02-19

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  18. Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  19. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1982-01-01

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  20. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  1. Process for forming a porous silicon member in a crystalline silicon member

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Yu, Conrad M. (Antioch, CA); Raley, Norman F. (Danville, CA)

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  2. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    SciTech Connect (OSTI)

    Mailoa, Jonathan P.; Bailie, Colin D.; Johlin, Eric C.; Hoke, Eric T.; Akey, Austin J.; Nguyen, William H.; McGehee, Michael D.; Buonassisi, Tonio

    2015-03-24

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband tunnel junction that facilitates majority-carrier charge recombination between the perovskite and silicon sub-cells. We demonstrate a 1 cm2 2-terminal monolithic perovskite/silicon multijunction solar cell with a VOC as high as 1.65 V. As a result, we achieve a stable 13.7% power conversion efficiency with the perovskite as the current-limiting sub-cell, and identify key challenges for this device architecture to reach efficiencies over 25%.

  3. Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

    SciTech Connect (OSTI)

    Cho, Chang-Hee; Kim, Baek-Hyun; Kim, Tae-Wook; Park, Seong-Ju; Park, Nae-Man; Sung, Gun-Yong

    2005-04-04

    The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH{sub 4}+N{sub 2} and SiH{sub 4}+NH{sub 3} plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH{sub 4}+NH{sub 3} plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH{sub 4}+N{sub 2} plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of SiH{sub 4}+NH{sub 3} plasma, due to the hydrogen passivation of the defects in the silicon nitride films by NH{sub 3} during the growth of the Si QDs.

  4. Impact of the hydrogen content on the photoluminescence efficiency of amorphous silicon alloys

    SciTech Connect (OSTI)

    Kistner, J.; Schubert, M. B.

    2013-12-07

    This paper analyzes the impact of hydrogen on the photoluminescence (PL) efficiency of the three wide gap silicon alloys: silicon carbide (a-SiC{sub x}), silicon nitride (a-SiN{sub x}): silicon oxide (a-SiO{sub x}). All three materials behave similarly. The progression of the PL efficiency over the Si content splits into two regions. With decreasing Si content, the PL efficiency increases until a maximum is reached. With a further decrease of the Si content, the PL efficiency declines again. A comprehensive analysis of the sample structure reveals that the PL efficiency depends on the degree of passivation of Si and Y atoms (Y?=?C, N, O) with hydrogen. For samples with a high Si content, an effective passivation of incorporated Y atoms gives rise to an increasing PL efficiency. The PL efficiency of samples with a low Si content is limited due to a rising amount of unpassivated Si defect states. We find that a minimum amount of 0.2?H atoms per Si atom is required to maintain effective luminescence.

  5. Electromigration process for the purification of molten silicon during crystal growth

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (San Pedro, CA); Shlichta, Paul J. (San Pedro, CA)

    1982-01-01

    A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

  6. Lead carbonate scintillator materials

    DOE Patents [OSTI]

    Derenzo, Stephen E. (Pinole, CA); Moses, William W. (Berkeley, CA)

    1991-01-01

    Improved radiation detectors containing lead carbonate or basic lead carbonate as the scintillator element are disclosed. Both of these scintillators have been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to other known scintillator materials. The radiation detectors disclosed are favorably suited for use in general purpose detection and in medical uses.

  7. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Millbury, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Sterling, MA); Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    A silicon nitride ceramic comprising: a) inclusions no greater than 25 microns in length, b) agglomerates no greater than 20 microns in diameter, and c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa.

  8. High Q silicon carbide microdisk resonator

    SciTech Connect (OSTI)

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12?×?10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  9. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1996-11-05

    A silicon nitride ceramic is disclosed comprising: (a) inclusions no greater than 25 microns in length, (b) agglomerates no greater than 20 microns in diameter, and (c) a surface finish of less than about 8 microinches, said ceramic having a four-point flexural strength of at least about 900 MPa. 4 figs.

  10. Nanoparticle-based etching of silicon surfaces

    DOE Patents [OSTI]

    Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  11. 8Be General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Be General Tables The General Table for 8Be is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Models Photodisintegration Fission and Fusion Astrophysical b-decay Hypernuclei

  12. 9B General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    B General Table The General Table for 9B is subdivided into the following categories: Shell Model Cluster Model Theoretical Other Model Calculations Complex Reactions Beta-Decay Pions Light-ion and Neutron Induced Reactions Hypernuclei

  13. 9C General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    C General Table The General Table for 9C is subdivided into the following categories: Shell Model Cluster Model Other Models Theoretical Beta-Decay Light-ion and Neutron Induced Reactions Astrophysical

  14. 6Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Table The General Table for 6Li is subdivided into the following categories: Ground State Properties of 6Li Special States Theoretical Shell Model Cluster Models Complex...

  15. Evaluation of Neutron Irradiated Silicon Carbide and Silicon Carbide Composites

    SciTech Connect (OSTI)

    Newsome G, Snead L, Hinoki T, Katoh Y, Peters D

    2007-03-26

    The effects of fast neutron irradiation on SiC and SiC composites have been studied. The materials used were chemical vapor deposition (CVD) SiC and SiC/SiC composites reinforced with either Hi-Nicalon{trademark} Type-S, Hi-Nicalon{trademark} or Sylramic{trademark} fibers fabricated by chemical vapor infiltration. Statistically significant numbers of flexural samples were irradiated up to 4.6 x 10{sup 25} n/m{sup 2} (E>0.1 MeV) at 300, 500 and 800 C in the High Flux Isotope Reactor at Oak Ridge National Laboratory. Dimensions and weights of the flexural bars were measured before and after the neutron irradiation. Mechanical properties were evaluated by four point flexural testing. Volume increase was seen for all bend bars following neutron irradiation. Magnitude of swelling depended on irradiation temperature and material, while it was nearly independent of irradiation fluence over the fluence range studied. Flexural strength of CVD SiC increased following irradiation depending on irradiation temperature. Over the temperature range studied, no significant degradation in mechanical properties was seen for composites fabricated with Hi-Nicalon{trademark} Type-S, while composites reinforced with Hi-Nicalon{trademark} or Sylramic fibers showed significant degradation. The effects of irradiation on the Weibull failure statistics are also presented suggesting a reduction in the Weibull modulus upon irradiation. The cause of this potential reduction is not known.

  16. Thermoelectric materials having porosity

    DOE Patents [OSTI]

    Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir; Harris, Fred

    2014-08-05

    A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

  17. OFFICE OF INSPECTOR GENERAL

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    APP-005 Planning for and Measuring Office of Inspector General Results FY 2002 Annual Performance Report and FY 2003 Annual Performance Plan Office of Inspector General U.S. Department of Energy Inspector General's Message We are pleased to present the Office of Inspector General's (OIG) consolidated Fiscal Year 2002 Annual Performance Report and Fiscal Year 2003 Annual Performance Plan. This document evaluates our actual Fiscal Year (FY) 2002 performance and establishes the performance goals

  18. A = 7 General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 General Tables The General Table for 7He is subdivided into the following categories: Experimental Theoretical Model Calculations Hypernuclei and Mesons Pions The General Table for 7Li is subdivided into the following categories: Reviews Ground State Properties Shell Model Cluster Model Other Theoretical Work Model Calculations Photodisintegration Polarization Fission and Fusion Elastic and Inelastic Scattering Projectile Fragmentation and Multifragmentation Astrophysical Hyperfine Structure

  19. General Resources - Hanford Site

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beryllium Program General Resources About Us Beryllium Program Beryllium Program Points of Contact Beryllium Facilities & Areas Beryllium Program Information Hanford CBDPP Committee Beryllium FAQs Beryllium Related Links Hanford Beryllium Awareness Group (BAG) Program Performance Assessments Beryllium Program Feedback Beryllium Health Advocates Primary Contractors/Employers Medical Testing and Surveillance Facilities General Resources General Resources Email Email Page | Print Print Page

  20. Materials Physics | Materials Science | NREL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Physics A photo of laser light rays going in various directions atop a corrugated metal substrate In materials physics, NREL focuses on realizing materials that transcend the present constraints of photovoltaic (PV) and solid-state lighting technologies. Through materials growth and characterization, coupled with theoretical modeling, we seek to understand and control fundamental electronic and optical processes in semiconductors. Capabilities Optimizing New Materials An illustration showing

  1. Hazardous Material Shipments | The Ames Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hazardous Material Shipments GET (General Employee Training): General Information: Materials and Transportation personnel perform domestic and international shipping activities associated with hazardous materials transported onsite and offsite. All activities are performed by personnel who have been trained for their respective transportation functions, as required by the Code of Federal Regulations (CFR) and International Air Transport Association (IATA). Shipments are made for the research and

  2. Method of forming crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, A.M.

    1995-03-21

    A method is disclosed for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics. 7 figures.

  3. Method of forming crystalline silicon devices on glass

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1995-01-01

    A method for fabricating single-crystal silicon microelectronic components on a silicon substrate and transferring same to a glass substrate. This is achieved by utilizing conventional silicon processing techniques for fabricating components of electronic circuits and devices on bulk silicon, wherein a bulk silicon surface is prepared with epitaxial layers prior to the conventional processing. The silicon substrate is bonded to a glass substrate and the bulk silicon is removed leaving the components intact on the glass substrate surface. Subsequent standard processing completes the device and circuit manufacturing. This invention is useful in applications requiring a transparent or insulating substrate, particularly for display manufacturing. Other applications include sensors, actuators, optoelectronics, radiation hard electronics, and high temperature electronics.

  4. Application Of Optical Processing For Growth Of Silicon Dioxide

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1997-06-17

    A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

  5. Application of optical processing for growth of silicon dioxide

    DOE Patents [OSTI]

    Sopori, B.L.

    1997-06-17

    A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

  6. Inward Lithium-Ion Breathing of Hierarchically Porous Silicon Anodes

    SciTech Connect (OSTI)

    Xiao, Qiangfeng; Gu, Meng; Yang, Hui; Li, Bing; Zhang, Cunman; Liu, Yang; Liu, Fang; Dai, Fang; Yang, Li; Liu, Zhongyi; Xiao, Xingcheng; Liu, Gao; Zhao, Peng; Zhang, Sulin; Wang, Chong M.; Lu, Yunfeng; Cai, Mei

    2015-11-05

    Silicon has been identified as one of the most promising candidates as anode for high performance lithium-ion batteries. The key challenge for Si anodes is the large volume change induced chemomechanical fracture and subsequent rapid capacity fading upon cyclic charge and discharge. Improving capacity retention thus critically relies on smart accommodation of the volume changes through nanoscale structural design. In this work, we report a novel fabrication method for hierarchically porous Si nanospheres (hp-SiNSs), which consist of a porous shell and a hollow core. Upon charge/discharge cycling, the hp-SiNSs accommodate the volume change through reversible inward expansion/contraction with negligible particle-level outward expansion. Our mechanics analysis revealed that such a unique volume-change accommodation mechanism is enabled by the much stiffer modulus of the lithiated layer than the unlithiated porous layer and the low flow stress of the porous structure. Such inward expansion shields the hp-SiNSs from fracture, opposite to the outward expansion in solid Si during lithiation. Lithium ion battery assembled with this new nanoporous material exhibits high capacity, high power, long cycle life and high coulombic efficiency, which is superior to the current commercial Si-based anode materials. The low cost synthesis approach reported here provides a new avenue for the rational design of hierarchically porous structures with unique materials properties.

  7. Montana Sand and Gravel Operations General Permit - Example Authorizat...

    Open Energy Info (EERE)

    OpenEI Reference LibraryAdd to library PermittingRegulatory Guidance - Supplemental Material: Montana Sand and Gravel Operations General Permit - Example AuthorizationPermitting...

  8. Colorado - Rights of Way on State Trust Lands - General Information...

    Open Energy Info (EERE)

    OpenEI Reference LibraryAdd to library PermittingRegulatory Guidance - Supplemental Material: Colorado - Rights of Way on State Trust Lands - General InformationPermitting...

  9. Scintillator material

    DOE Patents [OSTI]

    Anderson, D.F.; Kross, B.J.

    1992-07-28

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

  10. Scintillator material

    DOE Patents [OSTI]

    Anderson, D.F.; Kross, B.J.

    1994-06-07

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

  11. Scintillator material

    DOE Patents [OSTI]

    Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

    1992-01-01

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

  12. Scintillator material

    DOE Patents [OSTI]

    Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

    1994-01-01

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

  13. Reference Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Materials (continued) * Generators are required to avoid Las Vegas metropolitan area and Hoover Dam (Section 6.4 of NNSS Waste Acceptance Criteria, available at ...

  14. material recovery

    National Nuclear Security Administration (NNSA)

    dispose of dangerous nuclear and radiological material, and detect and control the proliferation of related WMD technology and expertise.

  15. Addressing the Manufacturing Issues Associated with the use of Ceramic Materials for Diesel Engine Components.

    SciTech Connect (OSTI)

    McSpadden, SB

    2001-09-12

    This CRADA supports the objective of selecting appropriate ceramic materials for manufacturing several diesel engine components and addressing critical manufacturing issues associated with these components. Materials that were evaluated included several varieties of silicon nitride and stabilized zirconia. The critical manufacturing issues that were addressed included evaluation of the effect of grain size and the effect of the grinding process on mechanical properties, mechanical performance, reliability, and expected service life. The CRADA comprised four tasks: (1) Machining of Zirconia and Silicon Nitride Materials; (2) Mechanical Properties Characterization and Performance Testing; (3) Tribological Studies; and (4) Residual Stress Studies. Using instrumented equipment at the High Temperature Materials Laboratory (HTML) Machining and Inspection Research User Center (MIRUC), zirconia and silicon nitride materials were ground into simulated component geometries. These components were subsequently evaluated for mechanical properties, wear, and residual stress characteristics in tasks two, three, and four.

  16. Formation of microchannels from low-temperature plasma-deposited silicon oxynitride

    DOE Patents [OSTI]

    Matzke, Carolyn M. (Los Lunas, NM); Ashby, Carol I. H. (Edgewood, NM); Bridges, Monica M. (Albuquerque, NM); Manginell, Ronald P. (Albuquerque, NM)

    2000-01-01

    A process for forming one or more fluid microchannels on a substrate is disclosed that is compatible with the formation of integrated circuitry on the substrate. The microchannels can be formed below an upper surface of the substrate, above the upper surface, or both. The microchannels are formed by depositing a covering layer of silicon oxynitride over a mold formed of a sacrificial material such as photoresist which can later be removed. The silicon oxynitride is deposited at a low temperature (.ltoreq.100.degree. C.) and preferably near room temperature using a high-density plasma (e.g. an electron-cyclotron resonance plasma or an inductively-coupled plasma). In some embodiments of the present invention, the microchannels can be completely lined with silicon oxynitride to present a uniform material composition to a fluid therein. The present invention has applications for forming microchannels for use in chromatography and electrophoresis. Additionally, the microchannels can be used for electrokinetic pumping, or for localized or global substrate cooling.

  17. Reference Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Materials Reference Materials Large Scale Computing and Storage Requirements for Advanced Scientific Computing Research January 5-6, 2011 Official DOE Invitation Workshop Invitation Letter from DOE Associate Directors NERSC Documents NERSC science requirements home page NERSC science requirements workshop page NERSC science requirements case study FAQ Previous NERSC Requirements Workshops Biological and Environmental Research (BER) Basic Energy Sciences (BES) Fusion Energy Sciences

  18. Reference Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Materials Reference Materials Large Scale Computing and Storage Requirements for Biological and Environmental Research May 7-8, 2009 Invitation Workshop Invitation Letter from DOE Associate Directors Workshop Invitation Letter from DOE ASCR Program Manager Yukiko Sekine Last edited: 2016-02-01 08:06:5

  19. Engineered Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    7 Engineered Materials Materials design, fabrication, assembly, and characterization for national security needs. Contact Us Group Leader Ross Muenchausen Email Deputy Group Leader Dominic Peterson Email Group Office (505)-667-6887 We perform polymer science and engineering, including ultra-precision target design, fabrication, assembly, characterization, and field support. We perform polymer science and engineering, including ultra-precision target design, fabrication, assembly,

  20. 10Li General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Li General Table The General Table for 10Li is subdivided into the following categories: Reviews Theoretical Ground State Properties Shell Model Cluster Model Other Models Special States Astrophysical Electromagnetic Transitions Hypernuclei Photodisintegration Light-Ion and Neutron Induced Reactions These General Tables correspond to the 2003 preliminary evaluation of ``Energy Levels of Light Nuclei, A = 10''. The prepublication version of A = 10 is available on this website in PDF format: A =