Sample records for general silicon material

  1. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01T23:59:59.000Z

    This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

  2. Holey Silicon as an Efficient Thermoelectric Material

    E-Print Network [OSTI]

    Tang, Jinyao

    2011-01-01T23:59:59.000Z

    Silicon as Efficient Thermoelectric Material Jinyao Tang 1,This work investigated the thermoelectric properties of thinat room temperature, the thermoelectric performance of HS is

  3. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOE Patents [OSTI]

    Brun, Milivoj Konstantin (Ballston Lake, NY); Luthra, Krishan Lal (Niskayuna, NY)

    2003-01-01T23:59:59.000Z

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  4. Sputtered silicon oxynitride for microphotonics : a materials study

    E-Print Network [OSTI]

    Sandland, Jessica Gene, 1977-

    2005-01-01T23:59:59.000Z

    Silicon oxynitride (SiON) is an ideal waveguide material because the SiON materials system provides substantial flexibility in composition and refractive index. SiON can be varied in index from that of silicon dioxide ...

  5. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01T23:59:59.000Z

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  6. Effect of Heat Treatment on Silicon Carbide Based Joining Materials for Fusion Energy

    SciTech Connect (OSTI)

    Lewinsohn, Charles A.; Jones, Russell H.; Nozawa, T.; Kotani, M.; Kishimoto, H.; Katoh, Y.; Kohyama, A.

    2001-10-01T23:59:59.000Z

    Two general approaches to obtaining silicon carbide-based joint materials were used. The first method relies on reactions between silicon and carbon to form silicon carbide, or to bond silicon carbide powders together. The second method consists of pyrolysing a polycarbosilane polymer to yield an amorphous, covalently bonded material. In order to assess the long-term durability of the joint materials, various heat treatments were performed and the effects on the mechanical properties of the joints were measured. Although the joints derived from the polycarbosilane polymer were not the strongest, the value of strength measured was not affected by heat treatment. On the other hand, the value of the strength of the reaction-based joints was affected by heat treatment, indicating the presence of residual stresses or unreacted material subsequent to processing. Further investigation of reaction-based joining should consist of detailed microscopic studies; however, continued study of joints derived from polymers is also warranted.

  7. Holey Silicon as an Efficient Thermoelectric Material

    SciTech Connect (OSTI)

    Tang, Jinyao; Wang, Hung-Ta; Hyun Lee, Dong; Fardy, Melissa; Huo, Ziyang; Russell, Thomas P.; Yang, Peidong

    2010-09-30T23:59:59.000Z

    This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These ?holey silicon? (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35percent porosity, the thermal conductivity of HS is consistently reduced by 2 orders of magnitude and approaches the amorphous limit. With a ZT value of 0.4 at room temperature, the thermoelectric performance of HS is comparable with the best value recorded in silicon nanowire system.

  8. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12T23:59:59.000Z

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  9. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1984-01-01T23:59:59.000Z

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  10. Microscopic Investigations on various Silicon Materials

    E-Print Network [OSTI]

    to be responsible for the radiation hardness of oxygen enriched silicon. The generation of the acceptor V 2 O interstitials and vacancies form defects with the impurities oxygen and carbon. The radiation induced defects are the shallow doping concentration phosphorous and the concentrations of the impurities oxygen and carbon

  11. ESP – Data from Restarted Life Tests of Various Silicon Materials

    SciTech Connect (OSTI)

    Schneider, Jim

    2010-10-06T23:59:59.000Z

    Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  12. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect (OSTI)

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01T23:59:59.000Z

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  13. Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material

    E-Print Network [OSTI]

    Analysis of copper-rich precipitates in silicon: Chemical state, gettering, and impact on multicrystalline silicon solar cell material Tonio Buonassisia Applied Science and Technology Group, University and Lawrence Berkeley National Laboratory, Berkeley, California 94720 Received 23 September 2004; accepted 13

  14. Silicon nitride/silicon carbide composite densified materials prepared using composite powders

    DOE Patents [OSTI]

    Dunmead, S.D.; Weimer, A.W.; Carroll, D.F.; Eisman, G.A.; Cochran, G.A.; Susnitzky, D.W.; Beaman, D.R.; Nilsen, K.J.

    1997-07-01T23:59:59.000Z

    Prepare silicon nitride-silicon carbide composite powders by carbothermal reduction of crystalline silica powder, carbon powder and, optionally, crystalline silicon nitride powder. The crystalline silicon carbide portion of the composite powders has a mean number diameter less than about 700 nanometers and contains nitrogen. The composite powders may be used to prepare sintered ceramic bodies and self-reinforced silicon nitride ceramic bodies.

  15. Jinzhou Huari Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |Jilin Zhongdiantou New Energy Co LtdJinzhou Huari Silicon Material Co

  16. Institute for Critical Technology and Applied Science Seminar Series Silicone Materials for Sustainable

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Institute for Critical Technology and Applied Science Seminar Series Silicone Materials; these goals are critical for the broad adoption of PV globally. Silicone polymers possess key material for Sustainable Energy: Emphasis on Photovoltaic Materials for Module Assembly and Installation with Ann Norris

  17. Germanium-rich silicon-germanium materials for field-effect modular application

    E-Print Network [OSTI]

    Jongthammanurak, Samerkhae

    2008-01-01T23:59:59.000Z

    The development of electric-field-induced optical modulation in the materials capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as ...

  18. Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels

    E-Print Network [OSTI]

    Garza, Tanya Cruz

    2011-01-01T23:59:59.000Z

    Single crystal silicon has promising inherent structural properties which are attractive for weight sensitive applications. Single crystal silicon, however, is a brittle material which makes the usable strength that can ...

  19. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

    DOE Patents [OSTI]

    Habermehl, Scott D. (Corrales, NM); Sniegowski, Jeffry J. (Edgewood, NM)

    2001-01-01T23:59:59.000Z

    The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

  20. Advanced materials, process, and designs for silicon photonic integration

    E-Print Network [OSTI]

    Sun, Rong, Ph. D. Massachusetts Institute of Technology

    2009-01-01T23:59:59.000Z

    The copper (Cu) interconnect has become the bottleneck for bandwidth scaling due to its increasing RC time constant with the decreasing gate line width. Currently, silicon based optical interconnect is widely pursued as ...

  1. High temperature investigations of crystalline silicon solar cell materials

    E-Print Network [OSTI]

    Hudelson, George David Stephen, III

    2009-01-01T23:59:59.000Z

    Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

  2. Process for preparing a densified beta-phase silicon nitride material having at least one densification aid, and the material resulting therefrom

    SciTech Connect (OSTI)

    Edler, J.P.; Lisowsky, B.

    1993-05-25T23:59:59.000Z

    A process is described for preparing an alpha-phase silicon nitride material and thereafter sintering to a densified beta-phase silicon nitride material, comprising: (a) comminuting a slurry including a mixture of (i) silicon-containing powder, (ii) water, and (iii) at least one densification aid to aid in later densifying of the silicon nitride material, said comminuting being performed to form fresh, non-oxidized surfaces on the silicon powder and to allow substantial chemical reaction between the silicon and the water, said comminuting being performed to form fresh, non-oxidized surfaces on the silicon powder and to allow substantial chemical reaction between the silicon and the water, yielding a mass; (b) nitriding the mass by exposure to a sufficient amount of a nitriding gas including at least nitrogen at a sufficient temperature for a sufficient length of time to form a mass of substantially alpha-phase silicon nitride; and (c) sintering the resultant silicon nitride mass at a sintering holding temperature of from about 1,450 C to about 2,100 C for a sufficient length of time to convert the silicon nitride from a predominantly alpha-phase material to a predominantly densified beta phase silicon nitride material exhibiting a decrease in bulk volume of the silicon nitride due to the densification.

  3. GSMSolar formerly Shanghai General Silicon Material Co Ltd | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarms A S JumpWindfarmFundicioncurriculum Jump

  4. DOPING ENGINEERING TO INCREASE THE MATERIAL YIELD DURING CRYSTALLIZATION OF B AND P COMPENSATED SILICON

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -induced degradation of minority carrier lifetime is however revealed to occur in this material as in standard boron than EG (Electronic Grade) silicon that may harm the photovoltaic performance of this material. Among, a lower net doping seems to lead to a reduction of the light-induced degradation observed in B

  5. ESP - Data From Restarted Life Tests of Various Silicone Materials - 2009

    SciTech Connect (OSTI)

    J. W. Schneider

    2010-02-24T23:59:59.000Z

    Enhanced Surveillance Project (ESP) funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until ESP funding allowed the restart in FY97. This report will provide data on materials used on various programs and on experimental materials not used in production. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  6. ESP – Data from Restarted Life Tests of Various Silicone Materials - 2011

    SciTech Connect (OSTI)

    Jim Schneider

    2011-12-31T23:59:59.000Z

    Current funding has allowed the restart of testing of various silicone materials placed in Life Tests or Aging Studies from past efforts. Some of these materials have been in test since 1982, with no testing for approximately 10 years, until funding allowed the restart in FY97. This report will provide data on materials used in production and on experimental materials not used in production. Charts for the various materials at different thickness, compression, and temperature combinations illustrate trends for the load-bearing properties of the materials.

  7. Jinzhou Rixin Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |Jilin Zhongdiantou New Energy Co LtdJinzhou Huari SiliconJinzhou

  8. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cell materials

    E-Print Network [OSTI]

    2004-01-01T23:59:59.000Z

    Solar Energy Materials & Solar Cells 72, 441 (2002). O. F.discussions about solar cells and defects in cast mc-Si;on Crystalline Silicon Solar Cell Materials and Processes (

  9. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  10. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    DOE Patents [OSTI]

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22T23:59:59.000Z

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  11. Chemical Reaction Mechanisms for Modeling the Fluorocarbon Plasma Etch of Silicon Oxide and Related Materials

    SciTech Connect (OSTI)

    HO,PAULINE; JOHANNES,JUSTINE E.; BUSS,RICHARD J.; MEEKS,ELLEN

    2001-05-01T23:59:59.000Z

    As part of a project with SEMATECH, detailed chemical reaction mechanisms have been developed that describe the gas-phase and surface chemistry occurring during the fluorocarbon plasma etching of silicon dioxide and related materials. The fluorocarbons examined are C{sub 2}F{sub 6}, CHF{sub 3} and C{sub 4}F{sub 8}, while the materials studied are silicon dioxide, silicon, photoresist, and silica-based low-k dielectrics. These systems were examined at different levels, ranging from in-depth treatment of C{sub 2}F{sub 6} plasma etch of oxide, to a fairly cursory examination of C{sub 4}F{sub 8} etch of the low-k dielectric. Simulations using these reaction mechanisms and AURORA, a zero-dimensional model, compare favorably with etch rates measured in three different experimental reactors, plus extensive diagnostic absolute density measurements of electron and negative ions, relative density measurements of CF, CF{sub 2}, SiF and SiF{sub 2} radicals, ion current densities, and mass spectrometric measurements of relative ion densities.

  12. Process feasibility study in support of silicon material Task I. Final report, October 1, 1975-February 6, 1981

    SciTech Connect (OSTI)

    Yaws, C.L.; Li, K.Y.; Hopper, J.R.; Fang, C.S.; Hansen, K.C.

    1981-02-06T23:59:59.000Z

    The Low-Cost Solar Array (LSA) Project is directed toward effective cost reduction in the production of silicon for solar cells. Results are presented for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells. Major physical, thermodynamic and transport property data are reported for the following silicon source and processing chemical materials: silane, silicon tetrachloride, trichlorosilane, dichlorosilane, silicon tetrafluoride, and silicon. The property data are reported for critical temperature, critical pressure, critical volume, vapor pressure, heat of vaporization, heat capacity, density, surface tension, viscosity, thermal conductivity, heat of formation and Gibb's free energy of formation. Chemical engineering analyses involving the preliminary process design of a plant (1000 MT/yr capacity) to produce silicon via the technology under consideration were accomplished for the following processes: UCC silane process for silicon, BCL process for silicon, conventional polysilicon process (Siemens technology), SiI/sub 4/ decomposition process, and DCS process (dichlorosilane).Major activities in chemical engineering analyses include base case conditions, reaction chemistry, process flowsheet, material balance, energy balance, property data, equipment design, major equipment list, production labor and forward for economic analysis. The process design package provides detailed data for raw materials, utilities, major process equipment and production labor requirements necessary for polysilicon production in each process. Using detailed data from the process design package, economic analyses for a 1000 MT/yr silicon plant were accomplished. Primary results from the economic analyses included plant capital investment and product cost. Results are presented and discussed. (WHK)

  13. Vector Symbolic Architectures: A New Building Material for Artificial General

    E-Print Network [OSTI]

    Levy, Simon D.

    Vector Symbolic Architectures: A New Building Material for Artificial General Intelligence1 Simon D. LEVY a,2 , and Ross GAYLER b a Washington and Lee University, USA b Veda Advantage Solutions, Australia. By directly encoding structure using famil- iar, computationally efficient algorithms, VSA bypasses many

  14. Process Research of Polycrystalline Silicon Material (PROPSM). Quarterly report No. 1, November 8-December 31, 1983

    SciTech Connect (OSTI)

    Culik, J.S.

    1984-01-01T23:59:59.000Z

    Recent reported results of hydrogen-passivated polycrystalline silicon solar cells are summarized. Most of the studies have been performed on very small grain or short minority-carrier diffusion length silicon. Hydrogenated solar cells fabricated from this material appear to have effective minority-carrier diffusion lengths that are still not very long, as shown by the open-circuit voltages of passivated cells that are still significantly less than those of single-crystal solar cells. The short-circuit current of solar cells fabricated from large-grain cast polycrystalline silicon is nearly equivalent to that of single-crystal cells, which indicates long bulk minority-carrier diffusion length. However, the open-circuit voltage, which is sensitive to grain boundary recombination, is 20 to 40 mV less. The goal of this program is to minimize the variations in open-circuit voltage and fill-factor that are caused by structural defects by passivating these defects using a hydrogenation process.

  15. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01T23:59:59.000Z

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  16. Generalized Hooke's law for isotropic second gradient materials

    E-Print Network [OSTI]

    F. dell'Isola; G. Sciarra; S. Vidoli

    2010-08-17T23:59:59.000Z

    In the spirit of Germain the most general objective stored elastic energy for a second gradient material is deduced using a literature result of Fortun\\'e & Vall\\'ee. Linear isotropic constitutive relations for stress and hyperstress in terms of strain and strain-gradient are then obtained proving that these materials are characterized by seven elastic moduli and generalizing previous studies by Toupin, Mindlin and Sokolowski. Using a suitable decomposition of the strain-gradient, it is found a necessary and sufficient condition, to be verified by the elastic moduli, assuring positive definiteness of the stored elastic energy. The problem of warping in linear torsion of a prismatic second gradient cylinder is formulated, thus obtaining a possible measurement procedure for one of the second gradient elastic moduli.

  17. Electrical Characterization of Trough Silicon Via (TSV) depending on Structural and Material Parameters based on 3D Full Wave Simulation

    E-Print Network [OSTI]

    Kim, Yong Jung

    Electrical Characterization of Trough Silicon Via (TSV) depending on Structural and Material the electrical characteristics of TSV depending on number of stacked TSVs. All electrical characterizations battery in one time charging. At the first trying for 3-D stacked chip packages, a wire- bonding

  18. Solid Silicone Elastomer Material(DC745U)-Historical Overview and New Experimental Results

    SciTech Connect (OSTI)

    Ortiz-Acosta, Denisse [Los Alamos National Laboratory

    2012-08-08T23:59:59.000Z

    DC745U is a silicone elastomer used in several weapon systems. DC745U is manufactured by Dow Corning and its formulation is proprietary. Risk changes without notification to the customer. {sup 1}H and {sup 29}Si{l_brace}{sup 1}H{r_brace} NMR have previously determined that DC745U contains {approx} 98.5% dimethyl siloxane, {approx}1.5% methyl-phenyl siloxane, and a small amount (<1%) of vinyl siloxane repeat units that are converted to crosslinking sites. The polymer is filled with {approx} 38 wt.% of a mixture of fumed silica and quartz. Some conclusions are: (1) DMA shows that crystallization does have an effect on the mechanical properties of DC745U; (2) DMA shows that the crystallization is time and temperature dependent; (3) Mechanical tests show that DC745U undergo a crystalline transition at temperatures below -50 C; (4) Rate and temperature does not have an effect above crystalline transition; (5) Crystalline transition occurs faster at colder temperatures; (6) The material remains responsive and recovers after warming it to temperature above -40 C; (7) We were able to review all previous historical data on DC745U; (8) Identified specific gaps in materials understanding; (9) Developed design of experiments and testing methods to address gaps associated with post-curing and low temperature mechanical behavior; (10) Resolved questions of post-cure and alleviated concerns associated with low temperature mechanical behavior with soak time and temperature; and (11) This work is relevant to mission-critical programs and for supporting programmatic work for weapon research.

  19. Ge-on-Si light-emitting materials and devices for silicon photonics

    E-Print Network [OSTI]

    Sun, Xiaochen

    2009-01-01T23:59:59.000Z

    The rapid growing needs for high data transmission bandwidth challenge the metal interconnection technology in every area from chip-level interconnects to long distance communication. Silicon photonics is an ideal platform ...

  20. An assessment of silicon carbide as a cladding material for light water reactors

    E-Print Network [OSTI]

    Carpenter, David Michael

    2011-01-01T23:59:59.000Z

    An investigation into the properties and performance of a novel silicon carbide-based fuel rod cladding under PWR conditions was conducted. The novel design is a triplex, with the inner and outermost layers consisting of ...

  1. Graphene and New Electronic Materials Silicon-based electronics will reach its fundamental limits over the next 6-10 years. This will

    E-Print Network [OSTI]

    Li, Mo

    to allow continued advances in this critical field. A material that has received extensive attention device fabrication. Interfaces and thus bonding structures between materials are criticalGraphene and New Electronic Materials Silicon-based electronics will reach its fundamental limits

  2. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01T23:59:59.000Z

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  3. Process research on Semix Silicon Material (PROSSM). Quarterly report No. 5, December 1, 1981-February 28, 1982

    SciTech Connect (OSTI)

    Wohlgemuth, J H; Warfield, D B

    1982-01-01T23:59:59.000Z

    Emphasis was shifted from the development of a cost-effective process sequence to research designed to understand the mechanisms of photovoltaic conversion in semicrystalline silicon. With this change has gone a change of title from Module Experimental Process System Development Unit (MEPSDU) to Process Research of Semix Silicon Material (PROSSM). Efforts are now underway to prepare a revised program plan with emphasis on determining the mechanisms limiting voltage and current collection in the semicrystalline silicon. The efforts reported concern work done before the change in emphasis and so the continued development of the cost-effective process sequence is reported. A cost-effective process sequence was identified, equipment was designed to implement a 6.6 MW per year automated production line, and a cost analysis projected a $0.56 per watt cell add-on cost for this line. Four process steps were developed for this program: glass bead back clean-up; hot spray antireflective coating; wave-soldering of fronts; ion milling for edging. While spray dopants were advertised as an off the shelf developed product, they proved to be unreliable with shorter than advertised shelf life. Equipment for handling and processing solar cells is available for all of the cell processing steps identified in this program. During this quarter efforts included work on spray dopant, edging, AR coating, wave soldering and fluxing, ion milling and cost analysis.

  4. Sem. Chemistry Materials Science Electrical Engineering Miscellaneous CP Introduction to General Chemistry,

    E-Print Network [OSTI]

    Pfeifer, Holger

    Sem. Chemistry Materials Science Electrical Engineering Miscellaneous CP Introduction to General & Inorganic Materials Chemistry (4 CP) Energy Science and Technology I (5 CP) Surfaces/Interfaces/ Heterogen. Catalysis/ Electrocatalysis (5 CP) Materials Science II (5 CP) Energy Science and Technology II ( 5 CP

  5. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  6. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    E-Print Network [OSTI]

    Kim, Yong Jung

    -i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.1­4 In using such films as a p layer

  7. Center for Nanophase Materials Sciences (CNMS) - General Characterization

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccessAlamos Laboratory Nastasi image UserFacilities GENERAL

  8. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  9. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30T23:59:59.000Z

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  10. Scanning mid-IR-laser microscopy: an efficient tool for materials studies in silicon-based photonics and photovoltaics

    E-Print Network [OSTI]

    Astafiev, O V; Yuryev, V A; 10.1016/S0022-0248(99)00711-3

    2011-01-01T23:59:59.000Z

    A method of scanning mid-IR-laser microscopy has recently been proposed for the investigation of large-scale electrically and recombination-active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of investigations on low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope together with the local photoexcitation of excess carriers within a small domain in a studied sample, thus forming an artificial source of scattering of the probe IR light for the recombination contrast imaging of defects. The current paper presents three contrasting examples of application of the above technique for defect visualization in silicon-based materials designed for photovoltaics and photonics which demonstrate that this...

  11. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

  12. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01T23:59:59.000Z

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  13. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    SciTech Connect (OSTI)

    NONE

    1998-08-01T23:59:59.000Z

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  14. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01T23:59:59.000Z

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  15. Advanced engineered substrates for the integration of lattice-mismatched materials with silicon

    E-Print Network [OSTI]

    Isaacson, David Michael, 1976-

    2006-01-01T23:59:59.000Z

    The dramatic advances in Si/SiO2-based microelectronic processing witnessed over the past several decades can largely be attributed to relatively material-independent device scaling. However, with physical and economic ...

  16. A general few-projection method for tomographic reconstruction of samples consisting of several distinct materials

    SciTech Connect (OSTI)

    Myers, Glenn R. [Department of Applied Mathematics, Australian National University, Canberra ACT 0200 (Australia); Thomas, C. David L.; Clement, John G. [Melbourne Dental School, University of Melbourne, Melbourne 3010 (Australia); Paganin, David M. [School of Physics, Monash University, Clayton 3800 (Australia); CSIRO Materials Science and Engineering, PB 33, Clayton South, 3169 (Australia); Gureyev, Timur E. [CSIRO Materials Science and Engineering, PB 33, Clayton South, 3169 (Australia)

    2010-01-11T23:59:59.000Z

    We present a method for tomographic reconstruction of objects containing several distinct materials, which is capable of accurately reconstructing a sample from vastly fewer angular projections than required by conventional algorithms. The algorithm is more general than many previous discrete tomography methods, as: (i) a priori knowledge of the exact number of materials is not required; (ii) the linear attenuation coefficient of each constituent material may assume a small range of a priori unknown values. We present reconstructions from an experimental x-ray computed tomography scan of cortical bone acquired at the SPring-8 synchrotron.

  17. Advanced Materials . 2012, 24, 25922597 High-Rate Capability Silicon Decorated Vertically AlignedCarbon

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    a leading technology for medical and electronic devices as well as electric vehicles. The increasing demand.[1] Then, as nanotechnology develops, various Si-nanostructures have emerged as an appropriate anode material. Specific charge storage capacity about 2000 mAh g-1 is available and stable after one

  18. Table B-1 Prerequisite flow chart for General Engineering, Applied Materials Track 16.5Credits

    E-Print Network [OSTI]

    Kaye, Jason P.

    Table B-1 Prerequisite flow chart for General Engineering, Applied Materials Track 1rst SEMESTER 15(4), CMPEN 271(3), CMPEN 275(1), EDSGN 110(2), EDSGN 210(2), E MCH 212(3) (Alternative Energy and Power

  19. Numerical solution of shock and ramp compression for general material properties

    SciTech Connect (OSTI)

    Swift, D C

    2009-01-28T23:59:59.000Z

    A general formulation was developed to represent material models for applications in dynamic loading. Numerical methods were devised to calculate response to shock and ramp compression, and ramp decompression, generalizing previous solutions for scalar equations of state. The numerical methods were found to be flexible and robust, and matched analytic results to a high accuracy. The basic ramp and shock solution methods were coupled to solve for composite deformation paths, such as shock-induced impacts, and shock interactions with a planar interface between different materials. These calculations capture much of the physics of typical material dynamics experiments, without requiring spatially-resolving simulations. Example calculations were made of loading histories in metals, illustrating the effects of plastic work on the temperatures induced in quasi-isentropic and shock-release experiments, and the effect of a phase transition.

  20. Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    E-Print Network [OSTI]

    2006-01-01T23:59:59.000Z

    " multicrystalline silicon for solar cells A.A. Istratova,b,, T. Buonassisia,b,1, M.D. Picketta,b, M. Heuera,b, E processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock.V. All rights reserved. Keywords: Photovoltaics; Solar cells; Solar-grade silicon; Defect engineering

  1. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09T23:59:59.000Z

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  2. Comparison of electrical CD measurements and cross-section lattice-plane counts of sub-micrometer features replicated in Silicon-on-Insulator materials

    SciTech Connect (OSTI)

    CRESSWELL,MICHAEL W.; BONEVICH,JOHN E.; HEADLEY,THOMAS J.; ALLEN,RICHARD A.; GIANNUZZI,LUCILLE A.; EVERIST,SARAH C.; GHOSHTAGORE,RATHINDRA, N.; SHEA,PATRICK J.

    2000-02-29T23:59:59.000Z

    Electrical test structures of the type known as cross-bridge resistors have been patterned in (100) epitaxial silicon material that was grown on Bonded and Etched-Back Silicon-on-Insulator (BESOI) substrates. The CDs (Critical Dimensions) of a selection of their reference segments have been measured electrically, by SEM (Scanning-Electron Microscopy) cross-section imaging, and by lattice-plane counting. The lattice-plane counting is performed on phase-contrast images made by High-Resolution Transmission-Electron Microscopy (HRTEM). The reference-segment features were aligned with <110> directions in the BESOI surface material. They were defined by a silicon micromachining process which results in their sidewalls being atomically-planar and smooth and inclined at 54.737{degree} to the surface (100) plane of the substrate. This (100) implementation may usefully complement the attributes of the previously-reported vertical-sidewall one for selected reference-material applications. The SEM, HRTEM, and electrical CD (ECD) linewidth measurements that are made on BESOI features of various drawn dimensions on the same substrate is being investigated to determine the feasibility of a CD traceability path that combines the low cost, robustness, and repeatability of the ECD technique and the absolute measurement of the HRTEM lattice-plane counting technique. Other novel aspects of the (100) SOI implementation that are reported here are the ECD test-structure architecture and the making of HRTEM lattice-plane counts from both cross-sectional, as well as top-down, imaging of the reference features. This paper describes the design details and the fabrication of the cross-bridge resistor test structure. The long-term goal is to develop a technique for the determination of the absolute dimensions of the trapezoidal cross-sections of the cross-bridge resistors reference segments, as a prelude to making them available for dimensional reference applications.

  3. On the thermo-elastostatics of heterogeneous materials. I. General integral equation

    E-Print Network [OSTI]

    Valeriy A. Buryachenko

    2009-12-21T23:59:59.000Z

    We consider a linearly thermoelastic composite medium,which consists of a homogeneous matrix containing a statistically inhomogeneous random set of inclusions, when the concentration of the inclusions is a function of the coordinates (so-called Functionally Graded Materials). The composite medium is subjected to essentially inhomogeneous loading by the fields of the stresses, temperature and body forces (e.g. for a centrifugal load). The general integral equations connecting the stress and strain fields in the point being considered and the surrounding points are obtained for the random fields of inclusions. The method is based on a centering procedure of subtraction from both sides of a known initial integral equation their statistical averages obtained without any auxiliary assumptions such as, e.g., effective field hypothesis implicitly exploited in the known centering methods. In so doing the size of a region including the inclusions acting on a separate one is finite, i.e. the locality principle takes place.

  4. Instructional materials for SARA/OSHA training. Volume 1, General site working training

    SciTech Connect (OSTI)

    Copenhaver, E.D.; White, D.A.; Wells, S.M. [Oak Ridge National Lab., TN (United States)

    1988-04-01T23:59:59.000Z

    This proposed 24 hour ORNL SARA/OSHA training curriculum emphasizes health and safety concerns in hazardous waste operations as well as methods of worker protection. Consistent with guidelines for hazardous waste site activities developed jointly by National Institute for Occupational Safety and Health, Occupational Safety and Health Administration, US Coast Guard, and the Envirorunental Protection Agency, the program material will address Basic Training for General Site Workers to include: ORNL Site Safety Documentation, Safe Work Practices, Nature of Anticipated Hazards, Handling Emergencies and Self-Rescue, Employee Rights and Responsibilities, Demonstration of Use, Care, and Limitations of Personal Protective, Clothing and Equipment, and Demonstration of Monitoring Equipment and Sampling Techniques. The basic training courses includes major fundamentals of industrial hygiene presented to the workers in a format that encourages them to assume responsibility for their own safety and health protection. Basic course development has focused on the special needs of ORNL facilities. Because ORNL generates chemical wastes, radioactive wastes, and mixed wastes, we have added significant modules on radiation protection in general, as well as modules on radiation toxicology and on radiation protective clothing and equipment.

  5. Assessment and recommendations for fissile-material packaging exemptions and general licenses within 10 CFR Part 71

    SciTech Connect (OSTI)

    Parks, C.V.; Hopper, C.M.; Lichtenwalter, J.L. [Oak Ridge National Lab., TN (United States)

    1998-07-01T23:59:59.000Z

    This report provides a technical and regulatory assessment of the fissile material general licenses and fissile material exemptions within Title 10 of the Code of Federal Regulations Part 71. The assessment included literature studies and calculational analyses to evaluate the technical criteria; review of current industry practice and concerns; and a detailed evaluation of the regulatory text for clarity, consistency and relevance. Recommendations for potential consideration by the Nuclear Regulatory Commission staff are provided. The recommendations call for a simplification and consolidation of the general licenses and a change in the technical criteria for the first fissile material exemptions.

  6. Six Thousand Electrochemical Cycles of Double-Walled Silicon Nanotube Anodes for Lithium Ion Batteries

    SciTech Connect (OSTI)

    Wu, H

    2011-08-18T23:59:59.000Z

    Despite remarkable progress, lithium ion batteries still need higher energy density and better cycle life for consumer electronics, electric drive vehicles and large-scale renewable energy storage applications. Silicon has recently been explored as a promising anode material for high energy batteries; however, attaining long cycle life remains a significant challenge due to materials pulverization during cycling and an unstable solid-electrolyte interphase. Here, we report double-walled silicon nanotube electrodes that can cycle over 6000 times while retaining more than 85% of the initial capacity. This excellent performance is due to the unique double-walled structure in which the outer silicon oxide wall confines the inner silicon wall to expand only inward during lithiation, resulting in a stable solid-electrolyte interphase. This structural concept is general and could be extended to other battery materials that undergo large volume changes.

  7. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, D.R.; Brzezinski, M.A.

    1996-06-11T23:59:59.000Z

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidation state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  8. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01T23:59:59.000Z

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  9. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  10. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11T23:59:59.000Z

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  11. Arnold Schwarzenegger SINGLE CRYSTAL SILICON

    E-Print Network [OSTI]

    in this report. #12;ENERGY INNOVATIONS SMALL GRANT (EISG) PROGRAM INDEPENDENT ASSESSMENT REPORT (IAR) SINGLEArnold Schwarzenegger Governor SINGLE CRYSTAL SILICON SHEET GROWTH Prepared For: California Energy Commission Energy Innovations Small Grant Program Prepared By: Energy Materials Research

  12. April 2002, L. Henn-Lecordier LAMP general operating procedures 1 Laboratory for Advanced Materials Processing

    E-Print Network [OSTI]

    Rubloff, Gary W.

    written request ­ Receive safety training from DES ­ Lab orientation with the lab manager ­ Equipment training and qualification #12;April 2002, L. Henn-Lecordier LAMP general operating procedures 9 LAMP "10

  13. Preliminary materials assessment for the Satellite Power System (SPS)

    SciTech Connect (OSTI)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01T23:59:59.000Z

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  14. Development of a General Shocked-Materials-Response Description for Simulations

    SciTech Connect (OSTI)

    Steven M. Valone

    2000-07-01T23:59:59.000Z

    This report outlines broad modeling issues pertaining to polymeric materials behavior under detonation conditions. Models applicable system wide are necessary to cope with the broad range of polymers and complex composite forms that can appear in Laboratory weapons systems. Nine major topics are discussed to span the breadth of materials, forms, and physical phenomena encountered when shocking polymers and foams over wide ranges of temperatures, pressures, shock strengths, confinement conditions, and geometries. The recommendations for directions of more intensive investigation consider physical fidelity, computational complexity, and application over widely varying physical conditions of temperature, pressure, and shock strength.

  15. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23T23:59:59.000Z

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  16. Process for strengthening silicon based ceramics

    SciTech Connect (OSTI)

    Kim, Hyoun-Ee; Moorhead, A.J.

    1991-03-07T23:59:59.000Z

    A process for strengthening silicon based ceramic monolithic materials and composite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400{degrees}C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts, or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  17. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21T23:59:59.000Z

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  18. Optical properties of Eu{sup 2+}/Eu{sup 3+} mixed valence, silicon nitride based materials

    SciTech Connect (OSTI)

    Kate, Otmar M. ten, E-mail: o.m.tenkate@tudelft.nl [Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven (Netherlands); Fundamental Aspects of Materials and Energy, Delft University of Technology, Mekelweg 15, 2629 JB Delft (Netherlands); Vranken, Thomas [Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven (Netherlands); Kolk, Erik van der [Fundamental Aspects of Materials and Energy, Delft University of Technology, Mekelweg 15, 2629 JB Delft (Netherlands); Jansen, Antonius P.J.; Hintzen, Hubertus T. [Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven (Netherlands)

    2014-05-01T23:59:59.000Z

    Eu{sub 2}SiN{sub 3}, a mixed valence europium nitridosilicate, has been prepared via solid-state reaction synthesis and its oxidation behavior and optical properties have been determined. Furthermore, the stability of several isostructural compounds of the type M{sup 2+}L{sup 3+}SiN{sub 3} has been predicted by using the density functional theory calculations, and verified by the actual synthesis of CaLaSiN{sub 3}, CaEuSiN{sub 3} and EuLaSiN{sub 3}. The band gap of CaLaSiN{sub 3} was found around 3.2 eV giving the material its yellow color. Eu{sub 2}SiN{sub 3} on the other hand is black due to a combination of the 4f–5d absorption band of Eu{sup 2+} and the charge transfer band of Eu{sup 3+}. Thermogravimetric analysis and Raman spectroscopic study of Eu{sub 2}SiN{sub 3} revealed that oxidation of this compound in dry air takes place via a nitrogen retention complex. - Graphical abstract: Energy level scheme of Eu{sub 2}SiN{sub 3} showing the occupied N{sup 3?} 2p band (blue rectangle), unoccupied Eu{sup 2+} 5d band (white rectangle), occupied Eu{sup 2+} 4f ground states (filled red circles) and unoccupied Eu{sup 2+} ground states (open red circles). - Highlights: • Density functional theory calculations on the stability of M{sup 2+}L{sup 3+}SiN{sub 3} compounds. • Solid-state reaction synthesis of Eu{sub 2}SiN{sub 3}, CaLaSiN{sub 3}, EuLaSiN{sub 3} and CaEuSiN{sub 3}. • Determination of the Eu{sup 2+} 4f–5d and Eu{sup 3+} CT transitions in M{sup 2+}L{sup 3+}SiN{sub 3} compounds. • Oxidation of Eu{sub 2}SiN{sub 3} in dry air takes place via a nitrogen retention complex.

  19. On the thermo-elastostatics of heterogeneous materials. II. Analyze and generalization of some basic hypotheses

    E-Print Network [OSTI]

    Valeriy A. Buryachenko

    2009-12-21T23:59:59.000Z

    One considers linearly thermoelastic composite media, which consist of a homogeneous matrix containing a statistically homogeneous random set of ellipsoidal uncoated or coated inclusions. Effective properties (such as compliance and thermal expansion) as well as the first statistical moments of stresses in the phases are estimated for the general case of nonhomogeneity of the thermoelastic inclusion properties. At first, one shortly reproduces both the basic assumptions and propositions of micromechanics used in most popular methods, namely: effective field hypothesis, quasi-crystallite approximation, and the hypothesis of "ellipsoidal symmetry". The explicit new representations of the effective thermoelastic properties and stress concentration factor are expressed through some building blocks described by numerical solutions for both the one and two inclusions inside the infinite medium subjected to both the homogeneous and inhomogeneous remote loading. The method uses as a background the new general integral equation proposed in the accompanied paper and makes it possible to abandon the basic concepts of micromechanics mentioned above. The results of this abandonment are quantitatively estimated for some modeled composite reinforced by aligned continously inhomogeneous fibers. Some new effects are detected that are impossible in the framework of a classical background of micromechanics.

  20. Amorphous Silicon

    Broader source: Energy.gov [DOE]

    DOE has a proven track record of funding successes in amorphous silicon (a-Si)research. A list of current projects, summary of the benefits, and discussion on the production and manufacturing of...

  1. Purification and deposition of silicon by an iodide disproportionation reaction

    DOE Patents [OSTI]

    Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

    2002-01-01T23:59:59.000Z

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  2. Radioactive material package seal tests

    SciTech Connect (OSTI)

    Madsen, M.M.; Humphreys, D.L.; Edwards, K.R.

    1990-01-01T23:59:59.000Z

    General design or test performance requirements for radioactive materials (RAM) packages are specified in Title 10 of the US Code of Federal Regulations Part 71 (US Nuclear Regulatory Commission, 1983). The requirements for Type B packages provide a broad range of environments under which the system must contain the RAM without posing a threat to health or property. Seals that provide the containment system interface between the packaging body and the closure must function in both high- and low-temperature environments under dynamic and static conditions. A seal technology program, jointly funded by the US Department of Energy Office of Environmental Restoration and Waste Management (EM) and the Office of Civilian Radioactive Waste Management (OCRWM), was initiated at Sandia National Laboratories. Experiments were performed in this program to characterize the behavior of several static seal materials at low temperatures. Helium leak tests on face seals were used to compare the materials. Materials tested include butyl, neoprene, ethylene propylene, fluorosilicone, silicone, Eypel, Kalrez, Teflon, fluorocarbon, and Teflon/silicone composites. Because most elastomer O-ring applications are for hydraulic systems, manufacturer low-temperature ratings are based on methods that simulate this use. The seal materials tested in this program with a fixture similar to a RAM cask closure, with the exception of silicone S613-60, are not leak tight (1.0 {times} 10{sup {minus}7} std cm{sup 3}/s) at manufacturer low-temperature ratings. 8 refs., 3 figs., 1 tab.

  3. DETECTOR MATERIALS: GERMANIUM AND SILICON

    E-Print Network [OSTI]

    Haller, E.E.

    2010-01-01T23:59:59.000Z

    most important for the radiation detection will be reviewedones for nuclear radiation detection are what we call the

  4. A study of the influence of boron diffusion sources on the material and electrical characteristics of silicon p-n junctions 

    E-Print Network [OSTI]

    Huang, Kuan-Chun Andrew

    1976-01-01T23:59:59.000Z

    is . he sheet resistance x. is the junc. ion dep. h. This average ccnductivity is then applied to Irvin's cu ve cr a p-+yoe Gaussian layer in silicon to obtain the surface concentration. Impurity Profile Incremental etching is a technique... for removing thin sections of silicon by a timed etch in a PNO -HF mixture (23). It is a relatively rough but quick technique to determine the impurity profile of a deep junction. A volume mixture of 2$ HF, 98fo HNO is experimentally determined to be best...

  5. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  6. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  7. 4.0 RISK FROM URANIUM MINING WASTE IN BUILDING In general, building materials contain low levels of radioactivity. For example, the range of

    E-Print Network [OSTI]

    the wastes from uranium mines have been removed from mining sites and used in local and nearby communities4.0 RISK FROM URANIUM MINING WASTE IN BUILDING MATERIALS In general, building materials contain low levels of radioactivity. For example, the range of natural uranium concentrations may average as low

  8. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  9. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01T23:59:59.000Z

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  10. Mat. Res. Soc. Symp. Proc. Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer

    E-Print Network [OSTI]

    Deng, Xunming

    of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique S.J. Jones-layers for nip single-junction solar cells. The high deposition rates allow for fabrication of the required plays in determining the device performance. INTRODUCTION µc-Si-based solar cells are an intriguing

  11. A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

    E-Print Network [OSTI]

    Moon, H.-S.

    Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...

  12. Production of high specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1994-01-01T23:59:59.000Z

    A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  13. Nitride-bonded silicon carbide composite filter

    SciTech Connect (OSTI)

    Thomson, B.N.; DiPietro, S.G.

    1995-12-01T23:59:59.000Z

    The objective of this program is to develop and demonstrate an advanced hot gas filter, using ceramic component technology, with enhanced durability to provide increased resistance to thermal fatigue and crack propagation. The material is silicon carbide fiber reinforced nitride bonded silicon carbide.

  14. Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |IsLove Your Home andDisposition | NationalMaterials

  15. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01T23:59:59.000Z

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  16. Polycrystalline silicon resistor trimming by laser annealing

    E-Print Network [OSTI]

    Crowley, Robert Terrence

    1989-01-01T23:59:59.000Z

    , and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal... materials are sfliicon-chrome, nickel-chrome, and tantalum nitride. Another material commonly used for resistors is polycrystalline silicon, or polysilicon. PolysiTicon is used in Metal Oxide Semiconductor (MOS) circuit fabrication as the MOS Field...

  17. A study of the influence of boron diffusion sources on the material and electrical characteristics of silicon p-n junctions

    E-Print Network [OSTI]

    Huang, Kuan-Chun Andrew

    1976-01-01T23:59:59.000Z

    silicon wafers w'th 10-15 ohm-cm re- sistivity, 1$-17 mils thick, and a flat along (110). After initial c' eaning all wafers were subjected to 15 min. steam oxidation at 1100 C which yields approximately 3200 2 of oxide. The wsfers then went through... of the crystal can be deduced. The mask has been originally designed to allow an X-ray beam to scan across a 100x100 mil block of' diffused area 2 followed by a 100x100 mil block of undiffused area alterna- 2 tely. Due to the inevitable bowing of the wafer...

  18. Optical Absorption Characteristics of Silicon Nanowires for Photovoltaic Applications

    E-Print Network [OSTI]

    Parkash, Vidur

    2010-01-01T23:59:59.000Z

    Solar cells have generated a lot of interest as a potential source of clean renewable energy for the future. However a big bottleneck in wide scale deployment of these energy sources remain the low efficiency of these conversion devices. Recently the use of nanostructures and the strategy of quantum confinement have been as a general approach towards better charge carrier generation and capture. In this article we have presented calculations on the optical characteristics of nanowires made out of Silicon. Our calculations show these nanowires form excellent optoelectronic materials and may yield efficient photovoltaic devices.

  19. Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief

    E-Print Network [OSTI]

    Rogers, John A.

    of the materials. Solar cells based on thin films of amorphous or polycrystalline silicon require sub- stantially, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells systems that benefit from thin construction and efficient materials utilization. KEYWORDS Nanoimprint

  20. Birefringence Measurements on Crystalline Silicon

    E-Print Network [OSTI]

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01T23:59:59.000Z

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  1. Black Silicon Enhanced Thin Film Silicon Photovoltaic Devices

    SciTech Connect (OSTI)

    Martin U. Pralle; James E. Carey

    2010-07-31T23:59:59.000Z

    SiOnyx has developed an enhanced thin film silicon photovoltaic device with improved efficiency. Thin film silicon solar cells suffer from low material absorption characteristics resulting in poor cell efficiencies. SiOnyx’s approach leverages Black Silicon, an advanced material fabricated using ultrafast lasers. The laser treated films show dramatic enhancement in optical absorption with measured values in excess of 90% in the visible spectrum and well over 50% in the near infrared spectrum. Thin film Black Silicon solar cells demonstrate 25% higher current generation with almost no impact on open circuit voltage as compared with representative control samples. The initial prototypes demonstrated an improvement of nearly 2 percentage points in the suns Voc efficiency measurement. In addition we validated the capability to scale this processing technology to the throughputs (< 5 min/m2) required for volume production using state of the art commercially available high power industrial lasers. With these results we clearly demonstrate feasibility for the enhancement of thin film solar cells with this laser processing technique.

  2. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  3. Incompatible Chemicals The following list is to be used only as a general guideline. Please refer to your Material Safety

    E-Print Network [OSTI]

    Slatton, Clint

    , butane, methane, propane(or other petroleum gases), hydrogen, sodium carbide, benzene, finely divided other chemicals Hydrocarbons (such as butane, propane, benzene) Fluorine, chlorine, bromine, chromic) Tellurides Reducing Agents #12;CHEMICAL STORAGE GUIDELINES STORE MATERIALS OUTLINED BY BOXES SEPARATELY

  4. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01T23:59:59.000Z

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  5. Laser wafering for silicon solar.

    SciTech Connect (OSTI)

    Friedmann, Thomas Aquinas; Sweatt, William C.; Jared, Bradley Howell

    2011-03-01T23:59:59.000Z

    Current technology cuts solar Si wafers by a wire saw process, resulting in 50% 'kerf' loss when machining silicon from a boule or brick into a wafer. We want to develop a kerf-free laser wafering technology that promises to eliminate such wasteful wire saw processes and achieve up to a ten-fold decrease in the g/W{sub p} (grams/peak watt) polysilicon usage from the starting polysilicon material. Compared to today's technology, this will also reduce costs ({approx}20%), embodied energy, and green-house gas GHG emissions ({approx}50%). We will use short pulse laser illumination sharply focused by a solid immersion lens to produce subsurface damage in silicon such that wafers can be mechanically cleaved from a boule or brick. For this concept to succeed, we will need to develop optics, lasers, cleaving, and high throughput processing technologies capable of producing wafers with thicknesses < 50 {micro}m with high throughput (< 10 sec./wafer). Wafer thickness scaling is the 'Moore's Law' of silicon solar. Our concept will allow solar manufacturers to skip entire generations of scaling and achieve grid parity with commercial electricity rates. Yet, this idea is largely untested and a simple demonstration is needed to provide credibility for a larger scale research and development program. The purpose of this project is to lay the groundwork to demonstrate the feasibility of laser wafering. First, to design and procure on optic train suitable for producing subsurface damage in silicon with the required damage and stress profile to promote lateral cleavage of silicon. Second, to use an existing laser to produce subsurface damage in silicon, and third, to characterize the damage using scanning electron microscopy and confocal Raman spectroscopy mapping.

  6. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor-and solar-

    E-Print Network [OSTI]

    Production and Use: Estimated value of silicon alloys and metal (excluding semiconductor- and solar- grade silicon) produced in the United States in 2009 was $470 million. Four companies produced silicon materials in six plants. Of those companies, three produced ferrosilicon in four plants. Metallurgical

  7. Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

    DOE Patents [OSTI]

    Branagan, Daniel J. (Idaho Falls, ID); Hyde, Timothy A. (Idaho Falls, ID); Fincke, James R. (Los Alamos, NM)

    2008-03-11T23:59:59.000Z

    The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

  8. Carbon-based Materials for Energy Storage

    E-Print Network [OSTI]

    Rice, Lynn Margaret

    2012-01-01T23:59:59.000Z

    K. and Beguin, F. et. al Materials Science and Engineering BF. Advanced Functional Materials 17, 11, 1828-1836 (2007)and Silicone- Modified Materials ch7, 82-99 (2007) 3. Gädda,

  9. Bench-Scale Silicone Process for Low-Cost CO{sub 2} Capture. Manufacturing Plan for Aminosilicone-based CO{sub 2} Absorption Material

    SciTech Connect (OSTI)

    Vogt, Kirkland

    2013-02-01T23:59:59.000Z

    A commercially cost effective manufacturing plan was developed for GAP-1m, the aminosilicone-based part of the CO{sub 2} capture solvent described in DE-FE0007502, and the small-scale synthesis of GAP-1m was confirmed. The plan utilizes a current intermediate at SiVance LLC to supply the 2013-2015 needs for GE Global Research. Material from this process was supplied to GE Global Research for evaluation and creation of specifications. GE Global Research has since ordered larger quantities (60 liters) for the larger scale evaluations that start in first quarter, 2013. For GE’s much larger future commercial needs, an improved, more economical pathway to make the product was developed after significant laboratory and literature research. Suppliers were identified for all raw materials.

  10. Vorbeck Materials Corp. | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    is developing a low-cost, advanced lithium-ion battery that employs a novel silicon graphene composite material that will substantially improve battery cycle life. When combined...

  11. Metal-Insulating-Semi-Incorporation of Silicon Nanoparticles into

    E-Print Network [OSTI]

    Foundation Research Experience for Undergraduates under grant number DMR-1063150, Renewable Energy Materials Research Science and Engineering Center under grant number DMR-0820518 and the Department of Energy SunMetal-Insulating-Semi- Conductor Incorporation of Silicon Nanoparticles into Silicon Based Solar

  12. Epitaxial graphene on silicon carbide: Introduction to structured graphene

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

  13. IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES

    E-Print Network [OSTI]

    IMPROVED SPECTRAL RESPONSE OF SILICONE ENCAPSULANTED PHOTOVOLTAIC MODULES Nick E. Powell 1* , Byung the benefit of using optically superior silicone encapsulant materials over the incumbent ethylene vinyl in the UV region of the solar spectrum. Single cell mini-modules were prepared using two different

  14. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOE Patents [OSTI]

    Copley, S.M.; Tao, H.; Todd-Copley, J.A.

    1991-06-11T23:59:59.000Z

    A process is disclosed for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength. 1 figure.

  15. Etching process for improving the strength of a laser-machined silicon-based ceramic article

    DOE Patents [OSTI]

    Copley, Stephen M. (Palos Verdes, CA); Tao, Hongyi (Covina, CA); Todd-Copley, Judith A. (Palos Verdes, CA)

    1991-01-01T23:59:59.000Z

    A process for improving the strength of laser-machined articles formed of a silicon-based ceramic material such as silicon nitride, in which the laser-machined surface is immersed in an etching solution of hydrofluoric acid and nitric acid for a duration sufficient to remove substantially all of a silicon film residue on the surface but insufficient to allow the solution to unduly attack the grain boundaries of the underlying silicon nitride substrate. This effectively removes the silicon film as a source of cracks that otherwise could propagate downwardly into the silicon nitride substrate and significantly reduce its strength.

  16. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01T23:59:59.000Z

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  17. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30T23:59:59.000Z

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  18. Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon

    E-Print Network [OSTI]

    Reading, Arthur H. (Arthur Henry)

    2009-01-01T23:59:59.000Z

    'Black silicon' refers to silicon that has been treated in a laser-ablation process to incorporate large amounts of chalcogen dopants. The material has been found to have greatly increased absorbance of visible and infared ...

  19. amorphous silicon flat-panel: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 Asymmetric Electrical Properties of Half Corbino Hydrogenated Amorphous Silicon Thin-Film Transistor and Its Applications to Flat Panel Displays Materials Science...

  20. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1982-01-01T23:59:59.000Z

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

  1. Field emission study of cobalt ion implanted porous silicon

    E-Print Network [OSTI]

    Liu, Hongbiao

    1995-01-01T23:59:59.000Z

    Porous silicon has become potentially important material for microelectronics applications. By using low energy implantation and energy scan implantation, a stable silicide with good electrical conductivity can be formed, and can be used...

  2. Fabrication and characterization of germanium-on-silicon photodiodes

    E-Print Network [OSTI]

    DiLello, Nicole Ann

    2012-01-01T23:59:59.000Z

    Germanium is becoming an increasingly popular material to use in photonic systems. Due to its strong absorption in the near infrared and its relative ease of integration on silicon, it is a promising candidate for the ...

  3. Reactor physics assessment of thick silicon carbide clad PWR fuels

    E-Print Network [OSTI]

    Bloore, David A. (David Allan)

    2013-01-01T23:59:59.000Z

    High temperature tolerance, chemical stability and low neutron affinity make silicon carbide (SiC) a potential fuel cladding material that may improve the economics and safety of light water reactors (LWRs). "Thick" SiC ...

  4. Structural origins of intrinsic stress in amorphous silicon thin films

    E-Print Network [OSTI]

    Johlin, Eric (Eric Carl)

    Hydrogenated amorphous silicon (a-Si:H) refers to a broad class of atomic configurations, sharing a lack of long-range order, but varying significantly in material properties, including optical constants, porosity, hydrogen ...

  5. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect (OSTI)

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J. [Harvard Univ., Cambridge, MA (United States)

    1996-08-01T23:59:59.000Z

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  6. Potential applications of a toughened silicon-based alloy

    E-Print Network [OSTI]

    Lei, Wang S

    2008-01-01T23:59:59.000Z

    Silicon has long been used as an alloying element in various metal alloys, in engineered ceramics, and in the semiconductor industry. However, due to its intrinsic low fracture toughness, it is generally perceived as a ...

  7. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Functionalized Silicone Nanospheres: Synthesis, Transition Metal Immobilization, and Catalytic Applications. Functionalized Silicone Nanospheres: Synthesis, Transition Metal...

  8. Photovoltaic Materials

    SciTech Connect (OSTI)

    Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

    2012-10-15T23:59:59.000Z

    The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

  9. Material characterization of the clay bonded silicon carbide candle filters and ash formations in the W-APF system after 500 hours of hot gas filtration at AEP. Appendix to Advanced Particle Filter: Technical progress report No. 11, January--March 1993

    SciTech Connect (OSTI)

    Alvin, M.A.

    1993-04-05T23:59:59.000Z

    (1) After 500 hours of operation in the pressurized fluidized-bed combustion gas environment, the fibrous outer membrane along the clay bonded silicon carbide Schumacher Dia Schumalith candles remained intact. The fibrous outer membrane did not permit penetration of fines through the filter wall. (2) An approximate 10-15% loss of material strength occurred within the intact candle clay bonded silicon carbide matrix after 500 hours of exposure to the PFBC gas environment. A relatively uniform strength change resulted within the intact candles throughout the vessel (i.e., top to bottom plenums), as well as within the various cluster ring positions (i.e., outer versus inner ring candle filters). A somewhat higher loss of material strength, i.e., 25% was detected in fractured candle segments removed from the W-APF ash hopper. (3) Sulfur which is present in the pressurized fluidized-bed combustion gas system induced phase changes along the surface of the binder which coats the silicon carbide grains in the Schumacher Dia Schumalith candle filter matrix.

  10. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01T23:59:59.000Z

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  11. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10T23:59:59.000Z

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  12. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01T23:59:59.000Z

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  13. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28T23:59:59.000Z

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  14. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10T23:59:59.000Z

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  15. Method of fabrication of display pixels driven by silicon thin film transistors

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

    1999-01-01T23:59:59.000Z

    Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

  16. Dredging Operations Technical Support Program. General decision-making framework for management of dredged material: Example application to Commencement Bay, Washington. Final report

    SciTech Connect (OSTI)

    Lee, C.R.; Tatem, H.E.; Brandon, D.L.; Kay, S.H.; Peddicord, R.K.

    1991-06-01T23:59:59.000Z

    Navigable waterways of the United States have a vital role in the Nation's economic growth. The US Army Corps of Engineers is responsible for the dredging and disposal of large volumes of sediment each year. Dredging is a process by which sediments are removed from the bottom of streams, rivers, lakes, and coastal waters, transported via ship, barge, or pipeline, and discharged to land or water. The presence of contamination in some locations has generated concern that dredged material disposal may adversely affect water quality and aquatic organisms or terrestrial organisms. Since many of the waterways are located in industrial and urban areas, some sediments may be highly contaminated with hazardous materials. A general decision-making framework based on the results of technically sound tests protocols is described. The decision-making framework includes consideration of sediment chemistry, physical chemistry of disposal site environments, and biological effects of sediment contaminants, as well as comparison of test results from sediments to be dredged with test results from reference sediments and with established criteria. The framework provides the basis for selection of the environmentally preferable disposal alternative and for identification of potentially appropriate control measures to minimize problems associated with the presence of contaminants.

  17. High-performance porous silicon solar cell development. Final report, October 1, 1993--September 30, 1995

    SciTech Connect (OSTI)

    Maruska, P. [Spire Corp., Bedford, MA (United States)] [Spire Corp., Bedford, MA (United States)

    1996-09-01T23:59:59.000Z

    The goal of the program was to demonstrate use of porous silicon in new solar cell structures. Porous silicon technology has been developed at Spire for producing visible light-emitting diodes (LEDs). The major aspects that they have demonstrated are the following: porous silicon active layers have been made to show photovoltaic action; porous silicon surface layers can act as antireflection coatings to improve the performance of single-crystal silicon solar cells; and porous silicon surface layers can act as antireflection coatings on polycrystalline silicon solar cells. One problem with the use of porous silicon is to achieve good lateral conduction of electrons and holes through the material. This shows up in terms of poor blue response and photocurrents which increase with increasing reverse bias applied to the diode.

  18. Hardfacing material

    DOE Patents [OSTI]

    Branagan, Daniel J. (Iona, ID)

    2012-01-17T23:59:59.000Z

    A method of producing a hard metallic material by forming a mixture containing at least 55% iron and at least one of boron, carbon, silicon and phosphorus. The mixture is formed into an alloy and cooled to form a metallic material having a hardness of greater than about 9.2 GPa. The invention includes a method of forming a wire by combining a metal strip and a powder. The metal strip and the powder are rolled to form a wire containing at least 55% iron and from two to seven additional elements including at least one of C, Si and B. The invention also includes a method of forming a hardened surface on a substrate by processing a solid mass to form a powder, applying the powder to a surface to form a layer containing metallic glass, and converting the glass to a crystalline material having a nanocrystalline grain size.

  19. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran, E-mail: gkova@irb.hr; Pivac, Branko [Department of Materials Physics, Rudjer Boskovic Institute, Bijeni?ka 56, P.O.B. 180, HR-10002 Zagreb (Croatia)

    2014-01-28T23:59:59.000Z

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  20. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    -based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells improved, which may make them suitable for encapsulating solar cells once again. We have recentlyAMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION Aarohi Vijh 1

  1. Longi Silicon Materials Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup |Jilin ZhongdiantouLichuan CityLiqcrytechLong

  2. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

    1982-01-01T23:59:59.000Z

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  3. Light Ions Response of Silicon Carbide Detectors

    E-Print Network [OSTI]

    M. De Napoli; G. Raciti; E. Rapisarda; C. Sfienti

    2006-12-14T23:59:59.000Z

    Silicon carbide (SiC) Schottky diodes 21 mum thick with small surfaces and high N-dopant concentration have been used to detect alpha particles and low energy light ions. In particular 12C and 16O beams at incident energies between 5 and 18 MeV were used. The diode active-region depletion-thickness, the linearity of the response, energy resolution and signal rise-time were measured for different values of the applied reverse bias. Moreover the radiation damage on SiC diodes irradiated with 53 MeV 16O beam has been explored. The data show that SiC material is radiation harder than silicon but at least one order of magnitude less hard than epitaxial silicon diodes. An inversion in the signal was found at a fluence of 10^15 ions/cm^2.

  4. Synchrotron-based investigations of the nature and impact of iron contamination in multicrystalline silicon solar cells

    E-Print Network [OSTI]

    clusters in multicrystalline silicon mc-Si materials used for cost-effective solar cells. Two distinct silicon solar cells Tonio Buonassisia and Andrei A. Istratov Lawrence Berkeley National Laboratory, 1% of the worldwide solar cell market is based on multicrystalline silicon mc-Si .1 It is known that even minute

  5. NEW METHOD FOR GRAIN SIZE CHARACTERIZATION OF A MULTI-CRYSTALLINE SILICON INGOT

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    -crystalline Silicon (mc-Si) is the material with the largest market share in photovoltaic cells and mod- ules importance on the degradation of the electrical performance of the material, especially when these de- fects

  6. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    SciTech Connect (OSTI)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01T23:59:59.000Z

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  7. Grain Boundary (GB) Studies in Nano- and Micro- Crystalline Materials

    E-Print Network [OSTI]

    Tanju, Mst Sohanazaman

    2011-01-01T23:59:59.000Z

    boundaries in silicon? Materials research society, Vol.122,bicrystal? Journal of Materials Science, 40(2005)3137- 5.in ZnO? Journal of Materials Science, 40(2005)3067-3074. 6.

  8. Silicon And Silicon-germanium Epitaxy For Quantum Dot Device Fabrications

    E-Print Network [OSTI]

    as they provide highly tunable structures for trapping and manipu- lating individual electrons/silicon- germanium material heterosystem. We describe the growth of two-dimensional electron gas structures advisor Professor James C. Sturm, whose perpetual enthusiasm, stimulating insight, and constant

  9. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M.A.; Mariella, R.P. Jr.; Carrano, A.V.; Balch, J.W.

    1996-12-31T23:59:59.000Z

    A silicon-based sleeve type chemical reaction chamber is described that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis. 32 figs.

  10. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Mariella, Jr., Raymond P. (Danville, CA); Carrano, Anthony V. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    1996-01-01T23:59:59.000Z

    A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

  11. alternative perovskite materials: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rays is used. Photovoltaics currently relies on three technologies. Monocrystalline and polycrystalline cells are silicon-based. Thin-film cells use semi-conductor materials....

  12. alternative materials wascon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rays is used. Photovoltaics currently relies on three technologies. Monocrystalline and polycrystalline cells are silicon-based. Thin-film cells use semi-conductor materials....

  13. alternative backfill materials: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rays is used. Photovoltaics currently relies on three technologies. Monocrystalline and polycrystalline cells are silicon-based. Thin-film cells use semi-conductor materials....

  14. alternative refractory materials: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rays is used. Photovoltaics currently relies on three technologies. Monocrystalline and polycrystalline cells are silicon-based. Thin-film cells use semi-conductor materials....

  15. alternative starting materials: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rays is used. Photovoltaics currently relies on three technologies. Monocrystalline and polycrystalline cells are silicon-based. Thin-film cells use semi-conductor materials....

  16. alternative target material: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    rays is used. Photovoltaics currently relies on three technologies. Monocrystalline and polycrystalline cells are silicon-based. Thin-film cells use semi-conductor materials....

  17. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C. Edwin (Golden, CO); Benson, David K. (Golden, CO)

    1988-01-01T23:59:59.000Z

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate before metal deposition to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  18. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, Jr., Dominic J. (Idaho Falls, ID); Herman, Herbert (Port Jefferson, NY); Burchell, Timothy D. (Oak Ridge, TN)

    1994-01-01T23:59:59.000Z

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1600.degree.C. which transforms the coating to silicon carbide.

  19. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26T23:59:59.000Z

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  20. Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix

    SciTech Connect (OSTI)

    Dr. Ronald Baney

    2008-12-15T23:59:59.000Z

    The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process.l

  1. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.

    1984-07-20T23:59:59.000Z

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  2. Thermal Transport Measurement of Silicon-Germanium Nanowires

    E-Print Network [OSTI]

    Gwak, Yunki

    2010-10-12T23:59:59.000Z

    to the enhanced boundary scattering. Among the nanoscale semiconductor materials, Silicon-Germanium(SiGe) alloy nanowire is a promising candidate for thermoelectric materials The thermal conductivities of SiGe core-shell nanowires with core diameters of 96nm, 129...

  3. Silicon Based Anodes for Li-Ion Batteries

    SciTech Connect (OSTI)

    Zhang, Jiguang; Wang, Wei; Xiao, Jie; Xu, Wu; Graff, Gordon L.; Yang, Zhenguo; Choi, Daiwon; Li, Xiaolin; Wang, Deyu; Liu, Jun

    2012-06-15T23:59:59.000Z

    Silicon is environmentally benign and ubiquitous. Because of its high specific capacity, it is considered one of the most promising candidates to replace the conventional graphite negative electrode used in today's Li ion batteries. Silicon has a theoretical specific capacity of nearly 4200 mAh/g (Li21Si5), which is 10 times larger than the specific capacity of graphite (LiC6, 372 mAh/g). However, the high capacity of silicon is associated with huge volume changes (more than 300 percent) when alloyed with lithium, which can cause severe cracking and pulverization of the electrode and lead to significant capacity loss. Significant scientific research has been conducted to circumvent the deterioration of silicon based anode materials during cycling. Various strategies, such as reduction of particle size, generation of active/inactive composites, fabrication of silicon based thin films, use of alternative binders, and the synthesis of 1-D silicon nanostructures have been implemented by a number of research groups. Fundamental mechanistic research has also been performed to better understand the electrochemical lithiation and delithiation process during cycling in terms of crystal structure, phase transitions, morphological changes, and reaction kinetics. Although efforts to date have not attained a commercially viable Si anode, further development is expected to produce anodes with three to five times the capacity of graphite. In this chapter, an overview of research on silicon based anodes used for lithium-ion battery applications will be presented. The overview covers electrochemical alloying of the silicon with lithium, mechanisms responsible for capacity fade, and methodologies adapted to overcome capacity degradation observed during cycling. The recent development of silicon nanowires and nanoparticles with significantly improved electrochemical performance will also be discussed relative to the mechanistic understanding. Finally, future directions on the development of silicon based anodes will be considered.

  4. Optical properties of nanostructured silicon-rich silicon dioxide

    E-Print Network [OSTI]

    Stolfi, Michael Anthony

    2006-01-01T23:59:59.000Z

    We have conducted a study of the optical properties of sputtered silicon-rich silicon dioxide (SRO) thin films with specific application for the fabrication of erbium-doped waveguide amplifiers and lasers, polarization ...

  5. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1997-01-01T23:59:59.000Z

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

  6. Silicon carbide mirrors for high power applications

    SciTech Connect (OSTI)

    Takacs, P.Z.

    1981-11-01T23:59:59.000Z

    The advent of synchrotron radiation (SR) sources and high energy lasers (HEL) in recent years has brought about the need for optical materials that can withstand the harsh operating conditions in such devices. SR mirrors must be ultra-high vacuum compatible, must withstand intense x-ray irradiation without surface damage, must maintain surface figure under thermal loading and must be capable of being polished to an extremely smooth surface finish. Chemical vapor deposited (CVD) silicon carbide in combination with sintered substrate material meets these requirements and offers additional benefits as well. It is an extremely hard material and offers the possibility of being cleaned and recoated many times without degradation of the surface finish, thereby prolonging the lifetime of expensive optical components. It is an extremely strong material and offers the possibility of weight reduction over conventional mirror materials.

  7. Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

    DOE Patents [OSTI]

    Neudecker, Bernd J. (Knoxville, TN); Bates, John B. (Oak Ridge, TN)

    2001-01-01T23:59:59.000Z

    Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

  8. CMOS-compatible Titanium Dioxide Deposition for Athermalization of Silicon Photonic Waveguides

    E-Print Network [OSTI]

    Yoo, S. J. Ben

    CMOS-compatible Titanium Dioxide Deposition for Athermalization of Silicon Photonic Waveguides@ucdavis.edu , sbyoo@ucdavis.edu Abstract: We discuss titanium dioxide material development for CMOS compatible fabrication and integration of athermal silicon photonic components. Titanium dioxide overclad ring modulators

  9. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01T23:59:59.000Z

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  10. Optical substrate materials for synchrotron radiation beamlines

    SciTech Connect (OSTI)

    Howells, M.R. [Lawrence Berkeley National Lab., CA (United States). Advanced Light Source; Paquin, R.A. [Univ. of Arizona, Tucson, AZ (United States). Optical Sciences Center

    1997-06-01T23:59:59.000Z

    The authors consider the materials choices available for making optical substrates for synchrotron radiation beam lines. They find that currently the optical surfaces can only be polished to the required finish in fused silica and other glasses, silicon, CVD silicon carbide, electroless nickel and 17-4 PH stainless steel. Substrates must therefore be made of one of these materials or of a metal that can be coated with electroless nickel. In the context of material choices for mirrors they explore the issues of dimensional stability, polishing, bending, cooling, and manufacturing strategy. They conclude that metals are best from an engineering and cost standpoint while the ceramics are best from a polishing standpoint. They then give discussions of specific materials as follows: silicon carbide, silicon, electroless nickel, Glidcop{trademark}, aluminum, precipitation-hardening stainless steel, mild steel, invar and superinvar. Finally they summarize conclusions and propose ideas for further research.

  11. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31T23:59:59.000Z

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  12. Stabilized Lithium Metal Powder, Enabling Material and Revolutionary...

    Broader source: Energy.gov (indexed) [DOE]

    LiCoO 2 cathodes and, when paired with advanced anode materials, such as silicon composite material, the resulting cell will still not meet the energy density requirements,...

  13. Philips Lumileds Is Exploring the Use of Silicon Substrates to Lower the Cost of LEDs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Philips Lumileds is exploring the use of nitride epitaxy on 150mm silicon substrates to produce low-cost, warm-white, high-performance general-illumination LEDs. Most LEDs are made with C-plane sapphire substrates, but silicon—at roughly half a penny per square millimeter—is much cheaper, and it's also easier to obtain. Philips Lumileds is attempting to adapt the use of silicon to the manufacture of LEDs, drawing upon the knowledge base and depreciated equipment of the computer industry, which has been using silicon substrates for decades.

  14. Electrode material comprising graphene-composite materials in a graphite network

    SciTech Connect (OSTI)

    Kung, Harold H.; Lee, Jung K.

    2014-07-15T23:59:59.000Z

    A durable electrode material suitable for use in Li ion batteries is provided. The material is comprised of a continuous network of graphite regions integrated with, and in good electrical contact with a composite comprising graphene sheets and an electrically active material, such as silicon, wherein the electrically active material is dispersed between, and supported by, the graphene sheets.

  15. Direct current, closed furnace silicon technology

    SciTech Connect (OSTI)

    Dosaj, V.D. [Dow Corning Corp., Midland, MI (United States); May, J.B. [Dow Corning Corp., Freeland, MI (United States); Arvidson, A.N. [Meadow Materials, Manitoba (Canada)

    1994-05-01T23:59:59.000Z

    The dc closed furnace technology for smelting silicon offers technical operating challenges, as well as, economic opportunities for off-gas recovery, reduced electrode consumption, reduced reductant oxidation losses, reduced energy consumption, and improved silicon recovery. The 10 mva dc closed furnace is located in East Selkirk, Manitoba. Construction of this pilot plant was started in September 1990. Following successful commissioning of the furnace in 1992, a number of smelting tests have been conducted aimed at optimization of the furnace operation and the raw material mix. The operation of a closed furnace is significantly different from an open furnace operation. The major difference being in the mechanical movement of the mix, off-gas recovery, and inability to observe the process. These differences made data collection and analysis critical in making operating decisions. This closed furnace was operated by computer control (state of the art in the smelling industry).

  16. Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

    E-Print Network [OSTI]

    Sharma, Rajat; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

    2015-01-01T23:59:59.000Z

    We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

  17. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26T23:59:59.000Z

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  18. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

    1992-01-01T23:59:59.000Z

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  19. Hybrid Silicon Evanescent Lasers John E. Bowersa

    E-Print Network [OSTI]

    Bowers, John

    [2]. Finally a 110 nm thick n-doped InP spacer is used as a bonding interface to silicon. The silicon factors of the silicon waveguide and the QWs can be manipulated by the silicon waveguide dimensions silicon waveguide. For the fabricated waveguide dimensions of a 0.7 µm height (H) and 0.6 µm rib

  20. Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers

    E-Print Network [OSTI]

    Scott, Stephanie Morgan

    2014-01-01T23:59:59.000Z

    Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

  1. Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

    SciTech Connect (OSTI)

    Kolodin, Boris; Deshpande, Anirudha R

    2014-09-16T23:59:59.000Z

    A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

  2. Argonne and CalBattery strike deal for silicon-graphene anode...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and CalBattery strike deal for silicon-graphene anode material By Angela Hardin * February 25, 2013 Tweet EmailPrint LEMONT, Ill. - The U.S. Department of Energy's Argonne National...

  3. Reactor physics considerations for implementing silicon carbide cladding into a PWR environment

    E-Print Network [OSTI]

    Dobisesky, Jacob P. (Jacob Paul), 1987-

    2011-01-01T23:59:59.000Z

    Silicon carbide (SiC) offers several advantages over zirconium (Zr)-based alloys as a potential cladding material for Pressurized Water Reactors: very slow corrosion rate, ability to withstand much higher temperature with ...

  4. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

    E-Print Network [OSTI]

    Ganapati, Vidya

    This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to ...

  5. Anisotropic dewetting in ultra-thin single-crystal silicon-on-insulator films

    E-Print Network [OSTI]

    Danielson, David T. (David Thomas)

    2008-01-01T23:59:59.000Z

    The single crystal silicon-on-insulator thin film materials system represents both an ideal model system for the study of anisotropic thin film dewetting as well as a technologically important system for the development ...

  6. Washington Silicon Plant Makes Way for Cheaper Solar-and Jobs...

    Broader source: Energy.gov (indexed) [DOE]

    This is particularly evident in the solar world. Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more...

  7. Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications

    E-Print Network [OSTI]

    Mavrokefalos, Anastassios

    Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid ...

  8. Effective lifetimes exceeding 300 ?s in gettered p-type epitaxial kerfless silicon for photovoltaics

    E-Print Network [OSTI]

    Powell, D. M.

    We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low ...

  9. Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur

    E-Print Network [OSTI]

    Sullivan, Joseph Timothy

    We apply soft x-ray emission spectroscopy (XES) to measure the electronic structure of crystalline silicon supersaturated with sulfur (up to 0.7 at. %), a candidate intermediate-band solar cell material. Si L[subscript ...

  10. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01T23:59:59.000Z

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  11. Edge-induced flattening in the fabrication of ultrathin freestanding crystalline silicon sheets

    E-Print Network [OSTI]

    Evans, Paul G.

    buckling due to strains of over 10À3 in the silicon-on-insulator starting material. In equilibrium,5 In such measurements, flat crystalline nanomem- branes with large lateral extents are needed in order to resolve weak

  12. Thin Silicon Solar Cells: A Path to 35% Shockley-Queisser Limits

    SciTech Connect (OSTI)

    Ding, Laura; Boccard, Mathieu; Williams, Joshua; Jeffries, April; Gangam, Srikanth; Ghosh, Kunal; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, Harry; Buonassisi, Tonio; Bremner, Stephen; Green, Martin; Balif, Christoph; Bertoni, Mariana

    2014-06-08T23:59:59.000Z

    Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

  13. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, J.I.; Wu, C.P.

    1982-03-30T23:59:59.000Z

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

  14. ADVANCED MATERIALS Curriculum Biomaterials Materials Science I 5 CP Materials Science II 5 CP Lab Materials Science II 5 CP

    E-Print Network [OSTI]

    Pfeifer, Holger

    ADVANCED MATERIALS Curriculum Biomaterials Materials Science I 5 CP Materials Science II 5 CP Lab Materials Science II 5 CP Computational Methods in Materials Science 4 CP Lab Materials Science I 5 CP Physical Chemistry 4 CP General Chemistry 2 CP Synthesis of Org. & Inorg. Materials 4 CP Introductory Solid

  15. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi (Ithaca, NY); Baik, Sunggi (Ithaca, NY)

    1984-12-11T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  16. Use of silicon in liquid sintered silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1984-12-11T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  17. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01T23:59:59.000Z

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  18. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01T23:59:59.000Z

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  19. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17T23:59:59.000Z

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  20. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13T23:59:59.000Z

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  1. Nuclear breeder reactor fuel element with silicon carbide getter

    DOE Patents [OSTI]

    Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

    1987-01-01T23:59:59.000Z

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  2. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon

    E-Print Network [OSTI]

    Martin, Michael S.

    2013-08-13T23:59:59.000Z

    , such as measuring X-rays emitted by U-235, by selecting materials that have high absorption related to electron energy level transitions at selected energies. For instance, it might be possible to make depleted uranium nanoparticles in silicon, which could have...

  3. Fabrication and properties of microporous silicon

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01T23:59:59.000Z

    Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

  4. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01T23:59:59.000Z

    Microporous silicon layers were fabricated by electrochemical etching of single crystalline silicon wafers in HF-ethanol solutions. The pore properties of porous silicon were examined by physical adsorption of nitrogen and the relationship between...

  5. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01T23:59:59.000Z

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  6. Fabrication of porous silicon membranes

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01T23:59:59.000Z

    efficiencies. The silicon difluoride, SiFq, is an unstable substance. It reacts with hydrofluoric acid forming silicic acid (HqSiFs) and hydrogen gas(Hq): SiFs + 2HF ? & SiF4+ Hs, (2) Si F4 + 2 H F ~ Hr Si Fs. In dilute HF solution, silicon can also react.... In step 1, the surface of silicon is covered with fluorine ions. In step 2, when an electric field is applied across the interface, holes move towards the surface. In step 3, some of the holes are trapped at the surface, and they weaken the silicon...

  7. Niobium Silicon alloys for Kinetic Inductance Detectors

    E-Print Network [OSTI]

    Calvo, M; Monfardini, A; Benoit, A; Boudou, N; Bourrion, O; Catalano, A; Dumoulin, L; Goupy, J; Sueur, H Le; Marnieros, S

    2013-01-01T23:59:59.000Z

    We are studying the properties of Niobium Silicon amorphous alloys as a candidate material for the fabrication of highly sensitive Kinetic Inductance Detectors (KID), optimized for very low optical loads. As in the case of other composite materials, the NbSi properties can be changed by varying the relative amounts of its components. Using a NbSi film with T_c around 1 K we have been able to obtain the first NbSi resonators, observe an optical response and acquire a spectrum in the band 50 to 300 GHz. The data taken show that this material has very high kinetic inductance and normal state surface resistivity. These properties are ideal for the development of KID. More measurements are planned to further characterize the NbSi alloy and fully investigate its potential.

  8. Anisotropic modeling of the Mullins effect and the residual strain of filled silicone rubber

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Anisotropic modeling of the Mullins effect and the residual strain of filled silicone rubber M rubber like materials present a stress-softening phenomenon known as Mullins effect. It is characterized of rubber like materials behavior is still an open issue. These materials are often submitted to cyclic

  9. Chemistry of Organic Electronic Materials 6483-Fall

    E-Print Network [OSTI]

    Sherrill, David

    Chemistry of Organic Electronic Materials 6483- Fall Tuesdays organic materials. The discussion will include aspects of synthesis General introduction to the electronic structure of organic materials with connection

  10. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1998-06-02T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  11. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1996-01-30T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  12. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1996-01-01T23:59:59.000Z

    A method for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors.

  13. Silicon on insulator with active buried regions

    DOE Patents [OSTI]

    McCarthy, A.M.

    1998-06-02T23:59:59.000Z

    A method is disclosed for forming patterned buried components, such as collectors, sources and drains, in silicon-on-insulator (SOI) devices. The method is carried out by epitaxially growing a suitable sequence of single or multiple etch stop layers ending with a thin silicon layer on a silicon substrate, masking the silicon such that the desired pattern is exposed, introducing dopant and activating in the thin silicon layer to form doped regions. Then, bonding the silicon layer to an insulator substrate, and removing the silicon substrate. The method additionally involves forming electrical contact regions in the thin silicon layer for the buried collectors. 10 figs.

  14. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Of Radiation Tolerant Silicon Carbide. Nanoscale Engineering Of Radiation Tolerant Silicon Carbide. Abstract: Radiation tolerance is determined by how effectively the...

  15. Hybrid stretchable circuits on silicone substrate

    SciTech Connect (OSTI)

    Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk [Nanoscience Centre, University of Cambridge, Cambridge CB01FF (United Kingdom); Liu, Q.; Suo, Z. [School of Engineering and Applied Sciences and Kavli Institute for Bionano Science and Technology, Harvard University, Cambridge, Massachusetts 02138 (United States); Lacour, S. P., E-mail: stephanie.lacour@epfl.ch [Centre for Neuroprosthetics and Laboratory for Soft Bioelectronics Interfaces, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015 (Switzerland)

    2014-04-14T23:59:59.000Z

    When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

  16. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29T23:59:59.000Z

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  17. Computational Approach to Photonic Drilling of Silicon Carbide

    SciTech Connect (OSTI)

    Samant, Anoop N [University of Tennessee, Knoxville (UTK); Daniel, Claus [ORNL; Chand, Ronald H [ORNL; Blue, Craig A [ORNL; Dahotre, Narendra B [University of Tennessee, Knoxville (UTK)

    2009-01-01T23:59:59.000Z

    The ability of lasers to carry out drilling processes in silicon carbide ceramic was investigated in this study. A JK 701 pulsed Nd:YAG laser was used for drilling through the entire depth of silicon carbide plates of different thicknesses. The laser parameters were varied in different combinations for a well controlled drilling through the entire thickness of the SiC plates. A drilling model incorporating effects of various physical phenomena such as decomposition, evaporation induced recoil pressure, and surface tension was developed. Such comprehensive model was capable of advance prediction of the energy and time required for drilling a hole through any desired depth of material.

  18. Electron-beam-induced growth of silicon multibranched nanostructures

    SciTech Connect (OSTI)

    Fonseca, Luis F.; Resto, Oscar; Sola, Francisco [Department of Physics, University of Puerto Rico, P. O. Box 23343, San Juan, 00931-3343 (Puerto Rico)

    2005-09-12T23:59:59.000Z

    Although successful nanobranching has been demonstrated for some materials using a variety of methods, the controlled fabrication of multibranched nanostructures of silicon is an important challenge faced by nanotechnologist; because it is crucial for the assembly of electronic interconnects at the atomic scale. Here, we report an electron-beam-induced approach that enables to grow silicon nanobranched structures at specific locations and to control the growth process at the nanoscale level. We further present a detailed in situ imaging of the growth dynamics and explain the results by a qualitative model based on local heating and charge concentration processes.

  19. A general methodology for inverse estimation of the elastic and anelastic properties of anisotropic open-cell porous materials—with application to a melamine foam

    SciTech Connect (OSTI)

    Cuenca, Jacques, E-mail: jcuenca@kth.se; Van der Kelen, Christophe; Göransson, Peter [Marcus Wallenberg Laboratory for Sound and Vibration Research, Royal Institute of Technology (KTH), Teknikringen 8, SE-10044 Stockholm (Sweden)

    2014-02-28T23:59:59.000Z

    This paper proposes an inverse estimation method for the characterisation of the elastic and anelastic properties of the frame of anisotropic open-cell foams used for sound absorption. A model of viscoelasticity based on a fractional differential constitutive equation is used, leading to an augmented Hooke's law in the frequency domain, where the elastic and anelastic phenomena appear as distinctive terms in the stiffness matrix. The parameters of the model are nine orthotropic elastic moduli, three angles of orientation of the material principal directions and three parameters governing the anelastic frequency dependence. The inverse estimation consists in numerically fitting the model on a set of transfer functions extracted from a sample of material. The setup uses a seismic-mass measurement repeated in the three directions of space and is placed in a vacuum chamber in order to remove the air from the pores of the sample. The method allows to reconstruct the full frequency-dependent complex stiffness matrix of the frame of an anisotropic open-cell foam and in particular it provides the frequency of maximum energy dissipation by viscoelastic effects. The characterisation of a melamine foam sample is performed and the relation between the fractional-derivative model and other types of parameterisations of the augmented Hooke's law is discussed.

  20. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15T23:59:59.000Z

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  1. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01T23:59:59.000Z

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  2. Breakthrough materials for energy storage

    E-Print Network [OSTI]

    Breakthrough materials for energy storage November 4, 2009 #12;#12;This revolution is happening;Electronics: our early market 5 hours #12;Progress on energy density... #12;Has reached a limit #12;Battery basics Anode Cathode #12;Battery basics Anode Cathode #12;Silicon leads in energy density

  3. Ultraviolet selective silicon photodiode

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01T23:59:59.000Z

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe... drpth corresponded to a high& r shor4wav? length rcsponsiv- ity tlirough liis ( xperimcnial diodes with junction dcpl ha ol'0. -'I to 2 0 pm. I indmayer and Allison [4I] I'abri&. ated n+-p solar cells with junction &lcpths of approximately 0. 1, 0. 15...

  4. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2012

    E-Print Network [OSTI]

    .44 billion. Three companies produced silicon materials in seven plants east of the Mississippi River. Ferrosilicon and metallurgical-grade silicon metal were each produced in four plants. One company produced both and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips

  5. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2011

    E-Print Network [OSTI]

    ,400 million. Two companies produced silicon materials in seven plants east of the Mississippi River. Ferrosilicon and metallurgical-grade silicon metal were each produced in four plants. One company produced both and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips

  6. Thickness limitations in carbon nanotube reinforced silicon nitride coatings synthesized by vapor infiltration

    SciTech Connect (OSTI)

    Eres, Gyula [ORNL

    2012-01-01T23:59:59.000Z

    Chemical vapor infiltration is a convenient method for synthesizing carbon nanotube (CNT)-reinforced ceramic coatings. The thickness over which infiltration is relatively uniform is limited by gas phase diffusion in the pore structure. These effects were investigated in two types of silicon nitride matrix composites. With CNTs that were distributed uniformly on the substrate surface dense coatings were limited to thicknesses of several microns. With dual structured CNT arrays produced by photolithography coatings up to 400 gm thick were obtained with minimal residual porosity. Gas transport into these dual structured materials was facilitated by creating micron sized channels between "CNT pillars" (i.e. each pillar consisted of a large number of individual CNTs). The experimental results are consistent with basic comparisons between the rates of gas diffusion and silicon nitride growth in porous structures. This analysis also provides a general insight into optimizing infiltration conditions during the fabrication of thick CNT-reinforced composite coatings. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

  7. FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS

    E-Print Network [OSTI]

    Deng, Xunming

    FINE-GRAINED NANOCRYSTALLINE SILICON P-LAYER FOR HIGH OPEN CIRCUIT VOLTAGE A-SI:H SOLAR CELLS of Michigan, Ann Arbor, MI 48109, USA ABSTRACT Hydrogenated amorphous silicon (a-Si:H) single- junction solar). It is found that the p-layer that leads to high Voc a-Si:H solar cells is a mixed-phase material that contains

  8. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  9. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    1999-01-01T23:59:59.000Z

    A fiber-reinforced silicon--silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon--silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  10. Silicon-doped boron nitride coated fibers in silicon melt infiltrated composites

    DOE Patents [OSTI]

    Corman, Gregory Scot (Ballston Lake, NY); Luthra, Krishan Lal (Schenectady, NY)

    2002-01-01T23:59:59.000Z

    A fiber-reinforced silicon-silicon carbide matrix composite having improved oxidation resistance at high temperatures in dry or water-containing environments is produced. The invention also provides a method for protecting the reinforcing fibers in the silicon-silicon carbide matrix composites by coating the fibers with a silicon-doped boron nitride coating.

  11. Comparison of electronic structure of as grown and solar grade silicon samples

    SciTech Connect (OSTI)

    Saravanan, R., E-mail: saragow@dataone.in; Sheeba, R. A. J. R. [Madura College, Research Centre and PG Department of Physics (India)

    2012-04-15T23:59:59.000Z

    A comparison of the electronic structure of two different types of silicon materials viz., (i) as grown silicon and (ii) solar silicon has been carried out utilizing maximum entropy method and pair distribution function using powder X-ray data sets. The precise electron density maps have been elucidated for the two samples. The covalent nature of the bonding between atoms in both the samples is found to be well pronounced and clearly seen from the electron density maps. The electron densities at the middle of the Si-Si bond are found to be 0.47 and 0.45 e/A{sup 3} for as grown silicon and solar silicon respectively. In this work, the local structural information has also been obtained by analyzing the atomic pair distribution functions of these two samples.

  12. Porous Materials Porous Materials

    E-Print Network [OSTI]

    Berlin,Technische Universität

    1 Porous Materials x Porous Materials · Physical properties * Characteristic impedance p = p 0 e -jk xa- = vej[ ] p x - j ; Zc= p ve = c ka 0k = c 1-j #12;2 Porous Materials · Specific acoustic impedance Porous Materials · Finite thickness ­ blocked p e + -jk (x-d)a p e - jk (x-d)a d x #12

  13. Silicon nitride ceramic comprising samaria and ytterbia

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01T23:59:59.000Z

    This invention relates to a sintered silicon nitride ceramic comprising samaria and ytterbia for enhanced toughness.

  14. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, K.H.; Sigmon, T.W.

    1996-10-15T23:59:59.000Z

    A process is disclosed for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  15. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01T23:59:59.000Z

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  16. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01T23:59:59.000Z

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  17. Lithium Ion Battery Performance of Silicon Nanowires With Carbon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ion Battery Performance of Silicon Nanowires With Carbon Skin . Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin . Abstract: Silicon (Si) nanomaterials have...

  18. Low cost fabrication of silicon carbide based ceramics and fiber reinforced composites

    SciTech Connect (OSTI)

    Singh, M.; Levine, S.R.

    1995-07-01T23:59:59.000Z

    A low cost processing technique called reaction forming for the fabrication of near-net and complex shaped components of silicon carbide based ceramics and composites is presented. This process consists of the production of a microporous carbon preform and subsequent infiltration with liquid silicon or silicon-refractory metal alloys. The microporous preforms are made by the pyrolysis of a polymerized resin mixture with very good control of pore volume and pore size thereby yielding materials with tailorable microstructure and composition. Mechanical properties (elastic modulus, flexural strength, and fracture toughness) of reaction-formed silicon carbide ceramics are presented. This processing approach is suitable for various kinds of reinforcements such as whiskers, particulates, fibers (tows, weaves, and filaments), and 3-D architectures. This approach has also been used to fabricate continuous silicon carbide fiber reinforced ceramic composites (CFCC`s) with silicon carbide based matrices. Strong and tough composites with tailorable matrix microstructure and composition have been obtained. Microstructure and thermomechanical properties of a silicon carbide (SCS-6) fiber reinforced reaction-formed silicon carbide matrix composites are discussed.

  19. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01T23:59:59.000Z

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  20. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOE Patents [OSTI]

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22T23:59:59.000Z

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  1. Simulated Co-Optimization of Crystalline Silicon Solar Cell Throughput and Efficiency Using Continuously Ramping Phosphorus Diffusion Profiles

    E-Print Network [OSTI]

    Morishige, Ashley Elizabeth

    Defect engineering is essential for the production of high-performance silicon photovoltaic (PV) devices with cost-effective solar-grade Si input materials. Phosphorus diffusion gettering (PDG) can mitigate the detrimental ...

  2. Development of in-situ toughened silicon-rich alloys : a new class of castable engineering ceramics

    E-Print Network [OSTI]

    Fischer, David S., Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    Despite having a broad set of desirable properties, silicon's potential as a primary constituent in a structural material has not yet been realized because of its extremely low fracture toughness. Motivated by the ...

  3. Polarization manipulation in silicon photonics

    E-Print Network [OSTI]

    Su, Zhan, S.M. Massachusetts Institute of Technology

    2013-01-01T23:59:59.000Z

    Silicon photonics is moving fast toward industrialization. It satisfies the increasing demand for higher speed, larger bandwidth communication. Thus it has a wide range of applications including high-performance computing, ...

  4. 3.012 Fundamentals of Materials Science, Fall 2003

    E-Print Network [OSTI]

    Marzari, Nicola

    This subject describes the fundamentals of bonding, energetics, and structure that underpin materials science. From electrons to silicon to DNA: the role of electronic bonding in determining the energy, structure, and ...

  5. All-optical switching with 1-ps response time in a DDMEBT enabled silicon grating

    E-Print Network [OSTI]

    Chen, Ray

    -order nonlinear optical material DDMEBT was spun onto silicon chips for the first time, filling 80 nm lithographic devices; (130.3130) Integrated optics materials; (230.5750) Resonators; (050.2770) Gratings. References, "A High-Optical Quality Supramolecular Assembly for Third-Order Integrated Nonlinear Optics," Adv

  6. High temperature mechanical performance of a hot isostatically pressed silicon nitride

    SciTech Connect (OSTI)

    Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others] [and others

    1996-01-01T23:59:59.000Z

    Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

  7. Bagdad Plant Raymond J. Polinski 585 Silicon Drive General Manager

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The FutureComments fromof EnergyBILIWG:Background:Bagdad Plant Raymond J.

  8. Boron-Loaded Silicone Rubber Scintillators

    SciTech Connect (OSTI)

    Bell, Z.W.; Maya, L.; Brown, G.M.; Sloop, F.V.Jr

    2003-05-12T23:59:59.000Z

    Silicone rubber received attention as an alternative to polyvinyltoluene in applications in which the scintillator is exposed to high doses because of the increased resistance of the rubber to the formation of blue-absorbing color centers. Work by Bowen, et al., and Harmon, et al., demonstrated their properties under gamma/x-ray irradiation, and Bell, et al. have shown their response to thermal neutrons. This last work, however, provided an example of a silicone in which both the boron and the scintillator were contained in the rubber as solutes, a formulation which led to the precipitation of solids and sublimation of the boron component. In the present work we describe a scintillator in which the boron is chemically bonded to the siloxane and so avoids the problem of precipitation and loss of boron to sublimation. Material containing up to 18% boron, by weight, was prepared, mounted on photomultipliers, and exposed to both neutron and gamma fluxes. Pulse height spectra showing the neutron and photon response were obtained, and although the light output was found to be much poorer than from samples in which boron was dissolved, the higher boron concentrations enabled essentially 100% neutron absorption in only a few millimeters' thickness of rubber.

  9. Thin Silicon MEMS Contact-Stress Sensor

    SciTech Connect (OSTI)

    Kotovsky, J; Tooker, A; Horsley, D A

    2009-12-07T23:59:59.000Z

    This work offers the first, thin, MEMS contact-stress (CS) sensor capable of accurate in situ measruement of time-varying, contact-stress between two solid interfaces (e.g. in vivo cartilage contact-stress and body armor dynamic loading). This CS sensor is a silicon-based device with a load sensitive diaphragm. The diaphragm is doped to create piezoresistors arranged in a full Wheatstone bridge. The sensor is similar in performance to established silicon pressure sensors, but it is reliably produced to a thickness of 65 {micro}m. Unlike commercial devices or other research efforts, this CS sensor, including packaging, is extremely thin (< 150 {micro}m fully packaged) so that it can be unobtrusively placed between contacting structures. It is built from elastic, well-characterized materials, providing accurate and high-speed (50+ kHz) measurements over a potential embedded lifetime of decades. This work explored sensor designs for an interface load range of 0-2 MPa; however, the CS sensor has a flexible design architecture to measure a wide variety of interface load ranges.

  10. Microstructure and properties of IN SITU toughened silicon carbide

    SciTech Connect (OSTI)

    De Jonghe, Lutgard C.; Ritchie, Robert O.; Zhang, Xiao Feng

    2003-05-01T23:59:59.000Z

    A silicon carbide with a fracture toughness as high as 9.1 MPa.m1/2 has been developed by hot pressing b-SiC powder with aluminum, boron, and carbon additions (ABC-SiC). Central in this material development has been systematic transmission electron microscopy (TEM) and mechanical characterizations. In particular, atomic-resolution electron microscopy and nanoprobe composition quantification were combined in analyzing grain boundary structure and nanoscale structural features.

  11. Formation of thin-film resistors on silicon substrates

    DOE Patents [OSTI]

    Schnable, George L. (Montgomery County, PA); Wu, Chung P. (Hamilton Township, Mercer County, NJ)

    1988-11-01T23:59:59.000Z

    The formation of thin-film resistors by the ion implantation of a metallic conductive layer in the surface of a layer of phosphosilicate glass or borophosphosilicate glass which is deposited on a silicon substrate. The metallic conductive layer materials comprise one of the group consisting of tantalum, ruthenium, rhodium, platinum and chromium silicide. The resistor is formed and annealed prior to deposition of metal, e.g. aluminum, on the substrate.

  12. Anchored nanostructure materials and method of fabrication

    DOE Patents [OSTI]

    Seals, Roland D; Menchhofer, Paul A; Howe, Jane Y; Wang, Wei

    2012-11-27T23:59:59.000Z

    Anchored nanostructure materials and methods for their fabrication are described. The anchored nanostructure materials may utilize nano-catalysts that include powder-based or solid-based support materials. The support material may comprise metal, such as NiAl, ceramic, a cermet, or silicon or other metalloid. Typically, nanoparticles are disposed adjacent a surface of the support material. Nanostructures may be formed as anchored to nanoparticles that are adjacent the surface of the support material by heating the nano-catalysts and then exposing the nano-catalysts to an organic vapor. The nanostructures are typically single wall or multi-wall carbon nanotubes.

  13. Ceramic composites reinforced with modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1990-01-01T23:59:59.000Z

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  14. Intel Corporation CREOL April 1 2005 SiliconSilicon PhotonicsPhotonics

    E-Print Network [OSTI]

    Van Stryland, Eric

    Recent resultsRecent results ­­IntelIntel''s Silicon Lasers Silicon Laser SummarySummary #12;*Third party of their respective ownerve owner 44 Industry standard silicon manufacturing processes couldIndustry standard silicon manufacturing processes could enable integration, bring volume economics to optical.enable integration, bring

  15. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on claims shall be paid at the rate established by the Secretary of the Treasury of the United States pursuant to Public Law 92-41 (85 Stat. 97). GC-37 BANKRUPTCY (Jun 2009) In...

  16. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (Next ReleaseThomasTheoriesClean1, 4/9/13)

  17. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (Next ReleaseThomasTheoriesClean1, 4/9/13)2,

  18. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (Next ReleaseThomasTheoriesClean1, 4/9/13)2,5,

  19. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over OurThe Iron Spin Transition in2, 2003 (Next ReleaseThomasTheoriesClean1,

  20. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    hydrogen dilution in silane on light induced degradation of hydrogenated amor- phous silicon films for solar photovoltaichydrogen content from 14-22%[76]. Hydrogenated amorphous silicon has promise as a photovoltaic

  1. Design of a silicon waver breaker

    E-Print Network [OSTI]

    Mukaddam, Kabir James, 1983-

    2005-01-01T23:59:59.000Z

    Usually multiple MEMS or IC devices are fabricated on a single silicon wafer. Manually separating the components from each other involves scribing and fracturing the silicon. This thesis presents a design for a tool to aid ...

  2. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01T23:59:59.000Z

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  3. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes

    SciTech Connect (OSTI)

    Li, Xiaolin; Gu, Meng; Hu, Shenyang Y.; Kennard, Rhiannon; Yan, Pengfei; Chen, Xilin; Wang, Chong M.; Sailor, Michael J.; Zhang, Jiguang; Liu, Jun

    2014-07-08T23:59:59.000Z

    Nanostructured silicon is a promising anode material for high performance lithium-ion batteries, yet scalable synthesis of such materials, and retaining good cycling stability in high loading electrode remain significant challenges. Here, we combine in-situ transmission electron microscopy and continuum media mechanical calculations to demonstrate that large (>20 micron) mesoporous silicon sponge (MSS) prepared by the scalable anodization method can eliminate the pulverization of the conventional bulk silicon and limit particle volume expansion at full lithiation to ~30% instead of ~300% as observed in bulk silicon particles. The MSS can deliver a capacity of ~750 mAh/g based on the total electrode weight with >80% capacity retention over 1000 cycles. The first-cycle irreversible capacity loss of pre-lithiated MSS based anode is only <5%. The insight obtained from MSS also provides guidance for the design of other materials that may experience large volume variation during operations.

  4. Electrical properties of nitrogen-doped float-zone silicon. Interim report, March-1984-March 1985

    SciTech Connect (OSTI)

    O'Leary, M.A.; Mitchel, W.C.

    1985-07-01T23:59:59.000Z

    Examination of nitrogen doped float zone silicon indicates that electrical properties are similiar to commerical Czochralski material. This material deserves further consideration for use in high power device and intrinsic infrared detector applications. Temperature-dependent Hall-effect measurements were made on as-received and neutron-transmutation-doped (NTD) sample of a nitrogen-doped float-zone silicon crystal to determine its electrical properties. Samples were studied in both as-received state and after various high-temperature anneals. Results were compared with commerical n-type Czochralski silicon and conventional neutron doped float zone silcion. Undoped, annealed samples of Si:N showed signs of inhomogeneities were not seen in lightly NTD's and annealed nitrogen-doped material, indicating that even light doping will mask effects of the proposed precipitation. No evidence was detected for any electrically active level that could be directly related to the nitrogen.

  5. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03T23:59:59.000Z

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  6. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03T23:59:59.000Z

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  7. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28T23:59:59.000Z

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  8. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01T23:59:59.000Z

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  9. Silicon Micromachined Dimensional Calibration Artifact for Mesoscale...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 1 Silicon Micromachined Dimensional Calibration Artifact for Mesoscale Measurement Machines 2...

  10. Equilibrium shapes of polycrystalline silicon nanodots

    SciTech Connect (OSTI)

    Korzec, M. D., E-mail: korzec@math.tu-berlin.de; Wagner, B., E-mail: bwagner@math.tu-berlin.de [Department of Mathematics, Technische Universität Berlin, Straße des 17. Juni 136, 10623 Berlin (Germany); Roczen, M., E-mail: maurizio.roczen@physik.hu-berlin.de [Department of Physics, Humboldt-Universität zu Berlin, Newtonstraße 15, 12489 Berlin (Germany); Schade, M., E-mail: martin.schade@physik.uni-halle.de [Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Straße 3, 06120 Halle (Germany); Rech, B., E-mail: bernd.rech@helmholtz-berlin.de [Helmholtz-Zentrum Berlin, Institute for Silicon Photovoltaics, Kekuléstraße 5, 12489 Berlin (Germany)

    2014-02-21T23:59:59.000Z

    This study is concerned with the topography of nanostructures consisting of arrays of polycrystalline nanodots. Guided by transmission electron microscopy (TEM) measurements of crystalline Si (c-Si) nanodots that evolved from a “dewetting” process of an amorphous Si (a-Si) layer from a SiO{sub 2} coated substrate, we investigate appropriate formulations for the surface energy density and transitions of energy density states at grain boundaries. We introduce a new numerical minimization formulation that allows to account for adhesion energy from an underlying substrate. We demonstrate our approach first for the free standing case, where the solutions can be compared to well-known Wulff constructions, before we treat the general case for interfacial energy settings that support “partial wetting” and grain boundaries for the polycrystalline case. We then use our method to predict the morphologies of silicon nanodots.

  11. Composite materials comprising two jonal functions and methods for making the same

    DOE Patents [OSTI]

    Fareed, Ali Syed (Newark, DE); Garnier, John Edward (Newark, DE); Schiroky, Gerhard Hans (Newark, DE); Kennedy, Christopher Robin (Newark, DE); Sonuparlak, Birol (Longmont, CO)

    2001-01-01T23:59:59.000Z

    The present invention generally relates to mechanisms for preventing undesirable oxidation (i.e., oxidation protection mechanisms) in composite bodies. The oxidation protection mechanisms include getterer materials which are added to the composite body which gather or scavenge undesirable oxidants which may enter the composite body. The getterer materials may be placed into at least a portion of the composite body such that any undesirable oxidant approaching, for example, a fiber reinforcement, would be scavenged by (e.g., reacted with) the getterer. The getterer materials) may form at least one compound which acts as a passivation layer, and/or is able to move by bulk transport (e.g., by viscous flow as a glassy material) to a crack, and sealing the crack, thereby further enhancing the oxidation protection of the composite body. One or more ceramic filler materials which serve as reinforcements may have a plurality of super-imposed coatings thereon, at least one of which coatings may function as or contain an oxidation protection mechanism. Specifically, a coating comprising boron nitride which has been engineered or modified to contain some silicon exhibits improved corrosion resistance, specifically to oxygen and moisture. The coated materials may be useful as reinforcing materials in high performance composites to provide improved mechanical properties such as fracture toughness. The present invention also relates to improved composites which incorporate these materials, and to their methods of manufacture.

  12. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18T23:59:59.000Z

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  13. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, Shiu-Wing (Downers Grove, IL)

    1997-01-01T23:59:59.000Z

    A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

  14. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOE Patents [OSTI]

    Becher, Paul F. (Oak Ridge, TN); Lin, Hua-Tay (Oak Ridge, TN)

    2011-06-28T23:59:59.000Z

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  15. Structural Automotive Components from Composite Materials

    Broader source: Energy.gov (indexed) [DOE]

    Focal Project 4: Structural Automotive Components from Composite Materials Libby Berger (General Motors) John Jaranson (Ford) Presented by Hamid Kia (General Motors) May 16, 2012...

  16. An all-silicon single-photon source by unconventional photon blockade

    E-Print Network [OSTI]

    Flayac, H; Savona, V

    2015-01-01T23:59:59.000Z

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We fin...

  17. Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced chemical vapor deposition using in situ

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Real-time process sensing and metrology in amorphous and selective area silicon plasma enhanced Materials Processing, North Carolina State University, Raleigh, North Carolina 27695 Received 11 July 1996 silicon deposition. The ability of mass spectrometry to observe process faults in real time is also

  18. Silicon-Based Thermoelectrics: Harvesting Low Quality Heat Using Economically Printed Flexible Nanostructured Stacked Thermoelectric Junctions

    SciTech Connect (OSTI)

    None

    2010-03-01T23:59:59.000Z

    Broad Funding Opportunity Announcement Project: UIUC is experimenting with silicon-based materials to develop flexible thermoelectric devices—which convert heat into energy—that can be mass-produced at low cost. A thermoelectric device, which resembles a computer chip, creates electricity when a different temperature is applied to each of its sides. Existing commercial thermoelectric devices contain the element tellurium, which limits production levels because tellurium has become increasingly rare. UIUC is replacing this material with microscopic silicon wires that are considerably cheaper and could be equally effective. Improvements in thermoelectric device production could return enough wasted heat to add up to 23% to our current annual electricity production.

  19. Final report on LDRD Project: Quantum confinement and light emission in silicon nanostructures

    SciTech Connect (OSTI)

    Guilinger, T.R.; Kelly, M.J.; Follstaedt, D.M. [and others

    1995-02-01T23:59:59.000Z

    Electrochemically formed porous silicon (PS) was reported in 1991 to exhibit visible photoluminescence. This discovery could lead to the use of integrated silicon-based optoelectronic devices. This LDRD addressed two general goals for optical emission from Si: (1) investigate the mechanisms responsible for light emission, and (2) tailor the microstructure and composition of the Si to obtain photoemission suitable for working devices. PS formation, composition, morphology, and microstructure have been under investigation at Sandia for the past ten years for applications in silicon-on-insulator microelectronics, micromachining, and chemical sensors. The authors used this expertise to form luminescent PS at a variety of wavelengths and have used analytical techniques such as in situ Raman and X-ray reflectivity to investigate the luminescence mechanism and quantify the properties of the porous silicon layer. Further, their experience with ion implantation in Si lead to an investigation into alternate methods of producing Si nanostructures that visibly luminesce.

  20. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  1. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06T23:59:59.000Z

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  2. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect (OSTI)

    Uçar, A.; Çopuro?lu, M.; Suzer, S., E-mail: suzer@fen.bilkent.edu.tr [Department of Chemistry, Bilkent University, 06800 Ankara (Turkey); Baykara, M. Z. [Department of Mechanical Engineering, Bilkent University, 06800 Ankara (Turkey); Ar?kan, O. [Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara (Turkey)

    2014-10-28T23:59:59.000Z

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (?0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  3. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10T23:59:59.000Z

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  4. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11T23:59:59.000Z

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  5. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01T23:59:59.000Z

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  6. Microelectromechanical pump utilizing porous silicon

    DOE Patents [OSTI]

    Lantz, Jeffrey W. (Albuquerque, NM); Stalford, Harold L. (Norman, OK)

    2011-07-19T23:59:59.000Z

    A microelectromechanical (MEM) pump is disclosed which includes a porous silicon region sandwiched between an inlet chamber and an outlet chamber. The porous silicon region is formed in a silicon substrate and contains a number of pores extending between the inlet and outlet chambers, with each pore having a cross-section dimension about equal to or smaller than a mean free path of a gas being pumped. A thermal gradient is provided along the length of each pore by a heat source which can be an electrical resistance heater or an integrated circuit (IC). A channel can be formed through the silicon substrate so that inlet and outlet ports can be formed on the same side of the substrate, or so that multiple MEM pumps can be connected in series to form a multi-stage MEM pump. The MEM pump has applications for use in gas-phase MEM chemical analysis systems, and can also be used for passive cooling of ICs.

  7. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11T23:59:59.000Z

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  8. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect (OSTI)

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06T23:59:59.000Z

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  9. First-principles Approaches to Simulate Lithiation in Silicon Electrodes

    E-Print Network [OSTI]

    Zhang, Qianfan; Wang, Enge

    2013-01-01T23:59:59.000Z

    Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

  10. Synthesis and characterization of a new silicone multiblock polymer

    SciTech Connect (OSTI)

    Riley, M.O.; Kolb, J.R.; Jessop, E.S.

    1982-05-10T23:59:59.000Z

    The Lawrence Livermore National Laboratory (LLNL) has an active interest in the synthesis of new polysiloxanes as base polymers for cellular silicone materials. These elastomers have properties uniquely suited to very specific engineering requirements. While the polymers which we have prepared via random equilibrium of various cyclic tetrasiloxanes have adequate properties for certain applications, there is evidence to suggest that alternating block polysiloxanes prepared via condensation-polymerization techniques have properties more suited to our end uses as flexible foam materials (cushions). The synthetic sequence developed to prepare these materials involves reactions of functionally terminated (silylamino and silanol) polysiloxane oligomers to produce alternating multiblock (ABAB...) materials of high molecular weight. Dialkylamines are condensation byproducts in this reaction. The analysis and characterization of these multiblock polymers is reported.

  11. Self-Assembly in Systems Containing Silicone Compounds

    SciTech Connect (OSTI)

    Ferreira, Maira Silva; Loh, Watson [Instituto de Quimica, Universidade Estadual de Campinas (UNICAMP), Campinas-SP, Brasil Caixa Postal 6154, CEP 13083-970 (Brazil)

    2009-01-29T23:59:59.000Z

    Chemical systems formed by silicone solvents and surfactants have potential applications in a variety of industrial products. In spite of their technological relevance, there are few reports on the scientific literature that focus on characterizing such ternary systems. In this work, we have aimed to develop a general, structural investigation on the phase diagram of one system that typically comprises silicone-based chemicals, by means of the SAXS (small-angle X-ray scattering) technique. Important features such as the presence of diverse aggregation states in the overall system, either on their own or in equilibrium with other structures, have been detected. As a result, optically isotropic chemical systems (direct and/or reversed microemulsions) and liquid crystals with lamellar or hexagonal packing have been identified and characterized.

  12. Porcelain enamel neutron absorbing material

    DOE Patents [OSTI]

    Iverson, D.C.

    1987-11-20T23:59:59.000Z

    A porcelain enamel composition as a neutron absorbing material can be prepared of a major proportion by weight of a cadmium compound and a minor proportion of compound of boron, lithium and silicon. These compounds in the form of a porcelain enamel coating or layer on several alloys has been found to be particularly effective in enhancing the nuclear safety of equipment for use in the processing and storage of fissile material. The composition of the porcelain enamel coating can be tailored to match the coefficient of thermal expansion of the equipment to be coated and excellent coating adhesion can be achieved. 2 figs.

  13. Porcelain enamel neutron absorbing material

    DOE Patents [OSTI]

    Iverson, Daniel C. (Aiken, SC)

    1990-01-01T23:59:59.000Z

    A porcelain enamel composition as a neutron absorbing material can be prepared of a major proportion by weight of a cadmium compound and a minor proportion of compounds of boron, lithium and silicon. These compounds in the form of a porcelain enamel coating or layer on several alloys has been found to be particularly effective in enhancing the nuclear safety of equipment for use in the processing and storage of fissile material. The composition of the porcelain enamel coating can be tailored to match the coefficient of thermal expansion of the equipment to be coated and excellent coating adhesion can be achieved.

  14. Supporting Information: Holey Silicon as efficient thermoelectric material

    E-Print Network [OSTI]

    Yang, Peidong

    is freshly exposed and can be etched away by following DRIE process. SEM is then used to carefully examinePS with various mixing ratios was dissolved in the mixture of toluene and tetrahydrofuran (70/30, v/v). S4VP thin

  15. Electronic Supplementary Material Scalable preparation of porous silicon nanoparticles and

    E-Print Network [OSTI]

    Zhou, Chongwu

    and their application for lithium-ion battery anodes Mingyuan Ge1 , Jiepeng Rong1 , Xin Fang1 , Anyi Zhang1 , Yunhao Lu2. The term PV is of the order of 10­5 eV, and TS is of the order of the thermal energy, which is much smaller

  16. Xinri Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapers Home Kyoung'sWoongjinXenergaXinhuaHeneng HydropowerXinri

  17. Zhongsheng Semiconductor Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit withTianlinPapersWindey Wind Generating

  18. Shaanxi Tianhong Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro Industries Pvt Ltd JumpInformationScottsOklahoma:Sevin RosenEnergy Jump to:Tianhong

  19. Dongqi Leshan Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluating A Potential MicrohydroDistrict ofDongjin Semichem Co Jump to:Dongkou

  20. Jiangxi Jiahua Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup | OpenHunanInformationJamesManufacturing | Open EnergyJiangxiJiangxi

  1. TBEA Xinjiang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with formSoutheastern ILSunseeker EnergySuzhouSynergy Biofuels LLCT I P RuralTBEA

  2. Anhui Tiansheng Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand Jump to:Ezfeedflag JumpID-fTriWildcat Place:Alvan2809328°,Anfu GuanshanPaiya Solar Energy Jump

  3. Huachang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual SiteofEvaluatingGroup | Open EnergyInformationHorizon Fuel CellOpenEISouthHua an

  4. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01T23:59:59.000Z

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  5. Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Coronel, Naomi (Naomi Cristina)

    2009-01-01T23:59:59.000Z

    Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

  6. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J., E-mail: james.bullock@anu.edu.au; Yan, D.; Wan, Y.; Cuevas, A. [Research School of Engineering, The Australian National University, Canberra, ACT 0200 (Australia); Demaurex, B.; Hessler-Wyser, A.; De Wolf, S. [École Polytechnique Fédérale de Lausanne (EPFL), Institute of micro engineering (IMT), Photovoltaics and Thin Film Electronic Laboratory, Maladière 71, CH-200 Neuchâtel (Switzerland)

    2014-04-28T23:59:59.000Z

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  7. Development of Novel Front Contract Pastes for Crystalline Silicon Solar Cells

    SciTech Connect (OSTI)

    Duty, C.; Jellison, D. G.E. P.; Joshi, P.

    2012-04-05T23:59:59.000Z

    In order to improve the efficiencies of silicon solar cells, paste to silicon contact formation mechanisms must be more thoroughly understood as a function of paste chemistry, wafer properties and firing conditions. Ferro Corporation has been involved in paste development for over 30 years and has extensive expertise in glass and paste formulations. This project has focused on the characterization of the interface between the top contact material (silver paste) and the underlying silicon wafer. It is believed that the interface between the front contact silver and the silicon wafer plays a dominant role in the electrical performance of the solar cell. Development of an improved front contact microstructure depends on the paste chemistry, paste interaction with the SiNx, and silicon (“Si”) substrate, silicon sheet resistivity, and the firing profile. Typical front contact ink contains silver metal powders and flakes, glass powder and other inorganic additives suspended in an organic medium of resin and solvent. During fast firing cycles glass melts, wets, corrodes the SiNx layer, and then interacts with underlying Si. Glass chemistry is also a critical factor in the development of an optimum front contact microstructure. Over the course of this project, several fundamental characteristics of the Ag/Si interface were documented, including a higher-than-expected distribution of voids along the interface, which could significantly impact electrical conductivity. Several techniques were also investigated for the interfacial analysis, including STEM, EDS, FIB, EBSD, and ellipsometry.

  8. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  9. Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer

    E-Print Network [OSTI]

    Isaacson, David M.

    We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

  10. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07T23:59:59.000Z

    optimized. The novel nickel-induced crystallization with low thermal budget was demonstrated. Polycrystalline silicon thin films were formed from the amorphous silicon thin films by the pulsed rapid thermal annealing process enhanced with a thin nickel...

  11. 3500-hour durability testing of commercial ceramic materials. Interim report

    SciTech Connect (OSTI)

    Carruthers, W.D.; Richerson, D.W.; Benn, K.W.

    1980-07-01T23:59:59.000Z

    A two-year durability testing program was performed by AiResearch Phoenix to evaluate four commercially available ceramic materials under simulated automotive gas turbine combustor discharge conditions. These conditions included extended cyclic thermal exposures up to 2500/sup 0/F and 3500 h. The four materials selected for evaluation were Norton NCX-34 hot pressed silicon nitride, AiResearch RBN 101 reaction bonded silicon nitride, Carborundum pressureless sintered ..cap alpha..-SiC and British Nuclear Fuels, Ltd. Refel reaction sintered silicon carbide marketed by Pure Carbon Co. These materials initially were exposed to 350 h/1750 cycles at 1200 and 1370/sup 0/C (2200 and 2500/sup 0/F). Subsequent exposures to 1050, 2100, and 3500 h were performed on the materials maintaining 50% of baseline strength after the initial exposure. Additional evaluations of exposed bars included dimension changes, weight changes, dye penetrant, specific damping capacity changes, Scanning Electron Microscope (SEM) fractography and x-ray diffraction.

  12. The CDF silicon vertex trigger

    SciTech Connect (OSTI)

    B. Ashmanskas; A. Barchiesi; A. Bardi

    2003-06-23T23:59:59.000Z

    The CDF experiment's Silicon Vertex Trigger is a system of 150 custom 9U VME boards that reconstructs axial tracks in the CDF silicon strip detector in a 15 {mu}sec pipeline. SVT's 35 {mu}m impact parameter resolution enables CDF's Level 2 trigger to distinguish primary and secondary particles, and hence to collect large samples of hadronic bottom and charm decays. We review some of SVT's key design features. Speed is achieved with custom VLSI pattern recognition, linearized track fitting, pipelining, and parallel processing. Testing and reliability are aided by built-in logic state analysis and test-data sourcing at each board's input and output, a common inter-board data link, and a universal ''Merger'' board for data fan-in/fan-out. Speed and adaptability are enhanced by use of modern FPGAs.

  13. The ATLAS Silicon Pixel Sensors

    E-Print Network [OSTI]

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01T23:59:59.000Z

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  14. Experimental Analysis of the Elastic Plastic Transition During Nanoindentation of Single Crystal a-Silicon Nitride

    SciTech Connect (OSTI)

    Jang, Jae-il [Hanyang University, Korea; Bei, Hongbin [ORNL; Becher, Paul F [ORNL; Pharr, George M [University of Tennessee, Knoxville (UTK) & Oak Ridge National Laboratory (ORNL)

    2012-01-01T23:59:59.000Z

    The elastic-to-plastic transition in single crystal a-silicon nitride was experimentally characterized through a series of nanoindentation experiments using a spherical indenter. The experimental results provide a quantitative description of the critical shear strengths for the transition, as well as estimates of the shear modulus and nanohardness of the material.

  15. Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

    E-Print Network [OSTI]

    1 Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight Abstract Low dimensional materials provide the possibility of improved thermoelectric performance due. As a result of suppressed phonon conduction, large improvements on the thermoelectric figure of merit, ZT

  16. The electrical and optical properties of thin lm diamond implanted with silicon

    E-Print Network [OSTI]

    Kolodzey, James

    :Si alloys were formed by the implantation of Si into polycrystalline diamond ®lms grown by che- mical vaporThe electrical and optical properties of thin ®lm diamond implanted with silicon K.J. Roea,* , J of diamond make it an attractive material for use in extreme conditions. Diamond devices have been fabricated

  17. THE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON

    E-Print Network [OSTI]

    Kolodzey, James

    devices. The C:Si alloys were formed by the implantation of Si into polycrystalline diamond films grownTHE ELECTRICAL AND OPTICAL PROPERTIES OF THIN FILM DIAMOND IMPLANTED WITH SILICON K. J. Roe and J and electrical properties of diamond make it an attractive material for use in extreme conditions. Diamond

  18. FIELD EMISSION FROM BORON-DOPING POLYCRYSTALLINE DIAMOND FILMS ON SILICON

    E-Print Network [OSTI]

    FIELD EMISSION FROM BORON-DOPING POLYCRYSTALLINE DIAMOND FILMS ON SILICON J. A. N. Gonçalves, G. M material fail. The field emission current from boron-doped polycrystalline diamond films grown by hot Campos, SP, Brazi Abstract This work deals with the study and development of the boron-doped diamond

  19. Lithium aluminum/iron sulfide battery having lithium aluminum and silicon as negative electrode

    DOE Patents [OSTI]

    Gilbert, Marian (Flossmoor, IL); Kaun, Thomas D. (New Lenox, IL)

    1984-01-01T23:59:59.000Z

    A method of making a negative electrode, the electrode made thereby and a secondary electrochemical cell using the electrode. Silicon powder is mixed with powdered electroactive material, such as the lithium-aluminum eutectic, to provide an improved electrode and cell.

  20. Porous Doped Silicon Nanowires for Lithium Ion Battery Anode with Long Cycle Life

    E-Print Network [OSTI]

    Zhou, Chongwu

    Porous Doped Silicon Nanowires for Lithium Ion Battery Anode with Long Cycle Life Mingyuan Ge material in a lithium ion battery. Even after 250 cycles, the capacity remains stable above 2000, 1600 in energy storage has stimulated significant interest in lithium ion battery research. The lithium ion

  1. Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar

    E-Print Network [OSTI]

    Yang, Peidong

    1 Supporting Information Absorption of Light in a Single-Nanowire Silicon Solar Cell Decorated Cyclotron Road, Berkeley, California 94720, United States 3 Department of Materials Science and Engineering_yang@berkeley.edu. #12;2 Fabrication of the suspended single-nanowire solar cells Trench substrates were fabricated from

  2. Light Trapping in Silicon Nanowire Solar Cells Erik Garnett and Peidong Yang*

    E-Print Network [OSTI]

    Yang, Peidong

    because of an extraordinarily high short-circuit current density (Jsc), which was attributed to strongly%, with short- circuit photocurrents higher than planar control samples. KEYWORDS Silicon, nanowires, solar cell material. However, the resulting short optical path length and minority carrier diffusion length

  3. Present status and future prospects of electro-magnetic casting for silicon solar cells

    SciTech Connect (OSTI)

    Kaneko, Kyojiro; Kawamura, Ritsuo; Misawa, Teruoki [Sumitomo SiTiX Corp., Amagasaki, Hyogo (Japan). Research and Development Center

    1994-12-31T23:59:59.000Z

    The development research of Electro-Magnetic Casting (EMC) for silicon crystal manufacturing technology has been carried out for years with the purpose of providing low cost multicrystalline silicon substrate for solar cells. The EMC technology is a new concept, in which electromagnetic force is utilized to suspend molten metal without contact to crucible wall for melting and solidification of silicon material. At present, the research has been carried out for the development of casting technique with an ingot size of 22 x 22 cm{sup 2} cross section, and the furnace construction for producing a 35 x 35 cm{sup 2} cross sectioned ingot has been begun. Solar cell conversion efficiencies using EMC ingot crystals are ranging from 13--14% at the present, and the quality of EMC material reaches within that of conventional mold casting material. By the improvements of higher casting speed, higher material quality and larger ingot size at the EMC technology, it is expected that a new casting technique for lower cost ingot production will be realized. The paper describes the features of EMC technology, the silicon EMC furnace, crystalline properties of EMC ingots, electric power consumption of EMC, and cost comparison of the EMC and Czychralski pulling methods.

  4. Spin-On Organic Polymer Dopants for Silicon Megan L. Hoarfrost,

    E-Print Network [OSTI]

    Javey, Ali

    Conversion and Storage; Energy and Charge Transport The semiconductor industry demands silicon restrictive as semiconductor electronic devices are scaled to nanometer dimensions.1,2,6-10 Furthermore, ion implantation is incompatible with nonplanar, nanostructured materials because the energetic ions have

  5. Development of large-area monolithically integrated silicon-film photovoltaic modules

    SciTech Connect (OSTI)

    Rand, J.A.; Bacon, C.; Cotter, J.E.; Lampros, T.H.; Ingram, A.E.; Ruffins, T.R.; Hall, R.B.; Barnett, A.M. (AstroPower, Inc., Newark, DE (United States))

    1992-07-01T23:59:59.000Z

    This report describes work to develop Silicon-Film Product III into a low-cost, stable device for large-scale terrestrial power applications. The Product III structure is a thin (< 100 {mu}m) polycrystalline silicon layer on a non-conductive supporting ceramic substrate. The presence of the substrate allows cells to be isolated and in interconnected monolithically in various series/parallel configurations. The long-term goal for the product is efficiencies over 18% on areas greater than 1200 cm{sup 2}. The high efficiency is made possible through the benefits of using polycrystalline thin silicon incorporated into a light-trapping structure with a passivated back surface. Short-term goals focused on the development of large-area ceramics, a monolithic interconnection process, and 100 cm{sup 2} solar cells. Critical elements of the monolithically integrated device were developed, and an insulating ceramic substrate was developed and tested. A monolithic interconnection process was developed that will isolate and interconnect individual cells on the ceramic surface. Production-based, low-cost process steps were used, and the process was verified using free-standing silicon wafers to achieve an open-circuit voltage (V{sub oc}) of 8.25 V over a 17-element string. The overall efficiency of the silicon-film materials was limited to 6% by impurities. Improved processing and feedstock materials are under investigation.

  6. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng (Los Alamos, NM)

    2011-06-14T23:59:59.000Z

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  7. Silicon Sheets By Redox Assisted Chemical Exfoliation

    E-Print Network [OSTI]

    Tchalala, Mohamed Rachid; Enriquez, Hanna; Kara, Abdelkader; Lachgar, Abdessadek; Yagoubi, Said; Foy, Eddy; Vega, Enrique; Bendounan, Azzedine; Silly, Mathieu G; Sirotti, Fausto; Nitshe, Serge; Chaudanson, Damien; Jamgotchian, Haik; Aufray, Bernard; Mayne, Andrew J; Dujardin, Gérald; Oughaddou, Hamid

    2013-01-01T23:59:59.000Z

    In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.

  8. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin. Enhancing the Lithiation Rate of Silicon Nanowires by the Inclusion of Tin. Abstract: Silicon (Si) has a...

  9. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  10. General Purpose NPN Transistor Array The CA3046 consists of five general purpose silicon NPN

    E-Print Network [OSTI]

    Ravikumar, B.

    · Custom Designed Differential Amplifiers · Temperature Compensated Amplifiers · See Application Note, AN of applications in low power systems in the DC through VHF range. They may be used as discrete transistors Match. . . . . . . . . . . . . . . . . . . . . . . . . . . . .2A (Max) · Low Noise Figure

  11. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, K.

    1992-01-01T23:59:59.000Z

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  12. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect (OSTI)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14T23:59:59.000Z

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  13. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01T23:59:59.000Z

    decline in photovoltaic efficiency is less dramatic, butefficiency ? = V OC I ?j SC Amorphous Silicon-Carbon Nanostructure So- lar Cells For this thesis, I made photovoltaic

  14. Silicon-Graphene Anodes | Argonne National Laboratory

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Silicon-Graphene Anodes Technology available for licensing: Provides low-cost production process. Advanced gas phase deposition process yields anodes with five times the specific...

  15. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  16. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, Vimal K. (Northboro, MA); Tracey, Dennis M. (Medfield, MA); Foley, Michael R. (Oxford, MA); Paille, Norman I. (Oxford, MA); Pelletier, Paul J. (Sutton, MA); Sales, Lenny C. (Grafton, MA); Willkens, Craig A. (Worcester, MA); Yeckley, Russell L. (Latrobe, PA)

    1998-01-01T23:59:59.000Z

    A ceramic body comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa.

  17. Advanced crystallization techniques of ''solar grade'' silicon

    SciTech Connect (OSTI)

    Gasparini, M.; Alessandri, M.; Calligarich, C.; Pizzini, S.; Rava, P.; Redaelli, F.; Sardi, L.

    1982-09-01T23:59:59.000Z

    Microstructural, electrical and photovoltaic characteristics of polycristalline silicon solar cells fabricated with silicon ingots containing 5, 100 and 500 ppmw iron are reported and discussed. All silicon ingots were grown by the directional solidification technique in graphite or special quartz molds and doped intentionally with iron, in order to evaluate the potentiality of the D.S. technique when employed with solar silicon feedstocks. Results indicate that structural breakdown limits the amount of the ingot which is usable for solar cells fabrication, but also that efficiencies in excess of 10% are obtained using the ''good'' region of the ingot.

  18. Protein separations using porous silicon membranes 

    E-Print Network [OSTI]

    Pass, Shannon Marie

    1992-01-01T23:59:59.000Z

    ) 61 IX LIST OF TABLES 1. The L9 Orthogonal Array 34 2. Experimental Factors and Levels . 3. Results of Silicon Etching Trials . 35 40 4. Results of Silicon Membrane Separation Experiments 44 5. Results of Single Solute Experiments Using... charge or as the absence of an electron in the crystal structure of silicon. The properties of boron doped siTicon are exploited experimentally by setting up an etch cell in which one surface of the silicon serves as the anode and by using...

  19. Published in L. Pavesi et al. (eds.), Towards the First Silicon Laser,

    E-Print Network [OSTI]

    Polman, Albert

    0200, Australia 1. Introduction It has generally been considered impossible to fabricate a silicon energy thus being strongly dependent on the nanocrystal size. SiO2 is the ideal matrix for Si efficiency. Next, we will provide experimental and theoretical arguments that the three- level Si=O defect

  20. General Publications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide andNationalallGeneralGeneral

  1. General Publications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbelllong version)Confinement |GeneralGeneral

  2. General Recommendations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbelllong version)Confinement |GeneralGeneral»

  3. Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

    SciTech Connect (OSTI)

    Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

    2012-08-01T23:59:59.000Z

    Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of in-service degradation. Examples include composite density, distribution of porosity, fiber-matrix bond character, uniformity of weave, physical damage, and joint quality at interface bonds.

  4. Modeling the Process of Mining Silicon Through a Single Displacement...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Modeling the Process of Mining Silicon Through a Single DisplacementRedox Reaction Modeling the Process of Mining Silicon Through a Single DisplacementRedox Reaction Below is...

  5. Design and Implementation of Silicon Nitride Valves for Heavy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Design and Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Poster presentation at the...

  6. Hydrogen Bubbles and Formation of Nanoporous Silicon during Electroche...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching. Hydrogen Bubbles and Formation of Nanoporous Silicon during Electrochemical Etching. Abstract: Many...

  7. Silicon Nanostructure-based Technology for Next Generation Energy...

    Broader source: Energy.gov (indexed) [DOE]

    Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2012 DOE Hydrogen and Fuel Cells...

  8. Designing Silicon Nanostructures for High Energy Lithium Ion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes 2012 DOE Hydrogen and Fuel...

  9. Synthesis and Characterization of Silicon Clathrates for Anode...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon Clathrates for Anode Applications in Lithium-Ion Batteries Synthesis and Characterization of Silicon Clathrates for Anode Applications in Lithium-Ion Batteries 2012 DOE...

  10. Mesoporous Silicon Sponge as an Anti-Pulverization Structure...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for...

  11. Heteroepitaxial Self Assembling Noble Metal Nanoparticles in Monocrystalline Silicon 

    E-Print Network [OSTI]

    Martin, Michael S.

    2013-08-13T23:59:59.000Z

    Embedding metal nanoparticles in crystalline silicon possesses numerous possible applications to fabricate optoelectronic switches, increase efficiency of radiation detectors, decrease the thickness of monocrystalline silicon solar panels...

  12. amorphous silicon carbon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  13. amorphous silicon film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  14. amorphous hydrogenated silicon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gunther; Baets, Roel 2011-01-01 36 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  15. amorphous silicon pv: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  16. amorphous silicon epid: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  17. amorphous silicon arrays: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    amorphous carbon Wang, Zhong L. 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  18. amorphous silicon alloy: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  19. amorphous silicon studied: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Yang, Cheng-Chieh 2012-01-01 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  20. amorphous silicon films: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values previously Hellman, Frances 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  1. amorphous silicon sensor: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  2. amorphous silicon nanoparticles: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  3. amorphous silicon alloys: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  4. amorphous silicon solar: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  5. amorphous silicon thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    values previously Hellman, Frances 6 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  6. amorphous silicon tft: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  7. amorphous silicon photovoltaic: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    properties Mazur, Eric 20 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  8. amorphous silicon final: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  9. amorphous silicon diodes: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  10. amorphous silicon surfaces: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  11. amorphous silicon technology: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    technologies is presented. Then 11 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  12. amorphous silicon electronic: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    technologies is presented. Then 22 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  13. amorphous silicon dioxide: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 8 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  14. amorphous silicon oxynitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 15 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  15. amorphous silicon schottky: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  16. amorphous silicon nitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paris-Sud XI, Universit de 26 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  17. amorphous silicon layers: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 16 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  18. amorphous silicon detector: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  19. area amorphous silicon: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  20. amorphous silicon measured: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 13 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  1. amorphous silicon deposited: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 23 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  2. amorphous silicon flat: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  3. amorphous silicon modules: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  4. amorphous silicon sensors: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  5. amorphous silicon carbonitride: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  6. amorphous silicon research: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  7. amorphous silicon prepared: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Nominanda, Helinda 2008-10-10 10 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  8. amorphous silicon microdisk: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 24 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  9. amorphous silicon germanium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Si-I or Ge Wang, Wei Hua 37 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  10. amorphous silicon radiation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 9 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  11. amorphous silicon multijunction: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 7 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  12. amorphous silicon pixel: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ph. Emplit; S. Massar 2011-02-04 14 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  13. area silicon sheet: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (ii) an aluminium oxidesilicon nitride stack. The rear contacts to the silicon base% on monocrystalline silicon wafers 1. Among others two loss mechanisms limit the conversion...

  14. Silicon Nanostructure-based Technology for Next Generation Energy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2013 DOE Hydrogen and Fuel Cells...

  15. Silicon Valley Power and Oklahoma Municipal Power Authority Win...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Silicon Valley Power and Oklahoma Municipal Power Authority Win 2014 Public Power Wind Awards Silicon Valley Power and Oklahoma Municipal Power Authority Win 2014 Public Power Wind...

  16. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect (OSTI)

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01T23:59:59.000Z

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  17. PROPERTIES OF DEFECTS AND IMPLANTS IN Mg+ IMPLANTED SILICON CARBIDE

    SciTech Connect (OSTI)

    Jiang, Weilin; Zhu, Zihua; Varga, Tamas; Bowden, Mark E.; Manandhar, Sandeep; Roosendaal, Timothy J.; Hu, Shenyang Y.; Henager, Charles H.; Kurtz, Richard J.; Wang, Yongqiang

    2013-09-25T23:59:59.000Z

    As a candidate material for fusion reactor designs, silicon carbide (SiC) under high-energy neutron irradiation undergoes atomic displacement damage and transmutation reactions that create magnesium as one of the major metallic products. The presence of Mg and lattice disorder in SiC is expected to affect structural stability and degrade thermo-mechanical properties that could limit SiC lifetime for service. We have initiated a combined experimental and computational study that uses Mg+ ion implantation and multiscale modeling to investigate the structural and chemical effects in Mg implanted SiC and explore possible property degradation mechanisms.

  18. Low-energy tetrahedral polymorphs of carbon, silicon, and germanium

    E-Print Network [OSTI]

    Mujica, Andres; Pickard, Chris J.; Needs, Richard J.

    2015-06-08T23:59:59.000Z

    that of carbon diamond, which could be of technological importance.28–32 For silicon, the main material used so far in the fabrication of solar cells, there is interest in new phases with electronic band structures and optical properties better suited than... to the diamond structure, when the latter is viewed along its ?110? direction. In analogy to (a) (b) (c) (d) FIG. 5. Construction of P42/ncm as a network of tilted diamond-like tetrahedra. Panel (a) shows a single slab of corner-sharing regular tetrahedra...

  19. Assembly and magnetic properties of nickel nanoparticles on silicon nanowires

    SciTech Connect (OSTI)

    Picraux, Samuel T [Los Alamos National Laboratory; Manandhar, Pradeep [Los Alamos National Laboratory; Nazaretski, E [Los Alamos National Laboratory; Thompson, J [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    The directed assembly of magnetic Ni nanoparticles at the tips of silicon nanowires is reported. Using electrodeposition Ni shells of thickness from 10 to 100 nm were selectively deposited on Au catalytic seeds at the ends of nanowires. Magnetic characterization confirms a low coercivity ({approx}115 Oe) ferromagnetic behavior at 300 K. This approach to multifunctional magnetic-semiconducting nanostructure assembly could be extended to electrodeposition of other materials on the nanowire ends, opening up novel ways of device integration. Such magnetically functionalized nanowires offer a new approach to developing novel highly localized magnetic probes for high resolution magnetic resonance force microscopy.

  20. Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

    SciTech Connect (OSTI)

    Ryan, Joseph V.; Pantano, C. G.

    2007-01-03T23:59:59.000Z

    Silicon oxycarbide glasses have been of interest because of the potential range of properties they might exhibit through a change in carbon-to-oxygen ratio. They are metastable materials and, as such, their structures and properties are very dependent upon the synthesis method. Silicon oxycarbide bonding has been seen in materials made by melting, oxidation, polycarbosilane or sol/gel pyrolysis, and chemical vapor deposition. In this work, the radio-frequency reactive sputtering of silicon carbide targets was explored for synthesis of amorphous silicon oxycarbide thin films. SiO (2?2x) Cx films, with a continuous range of compositions where 0silicon oxycarbide bonding comprises 55%-95% of the material structure. These sputter-deposited materials were also found to have significantly less free carbon as compared to those produced by other methods. Thus, the unique properties for these novel oxycarbide materials can now be established.

  1. Covetic Materials

    Energy Savers [EERE]

    Can re-melt, dilute, alloy... Fabrication of Covetic Materials - Nanocarbon Infusion 3 4 Technical Approach Unusual Characteristics of Covetic Materials ("covalent" &...

  2. Computational modeling and analysis of thermoelectric properties of nanoporous silicon

    SciTech Connect (OSTI)

    Li, H.; Yu, Y.; Li, G., E-mail: gli@clemson.edu [Department of Mechanical Engineering, Clemson University, Clemson, South Carolina 29634-0921 (United States)

    2014-03-28T23:59:59.000Z

    In this paper, thermoelectric properties of nanoporous silicon are modeled and studied by using a computational approach. The computational approach combines a quantum non-equilibrium Green's function (NEGF) coupled with the Poisson equation for electrical transport analysis, a phonon Boltzmann transport equation (BTE) for phonon thermal transport analysis and the Wiedemann-Franz law for calculating the electronic thermal conductivity. By solving the NEGF/Poisson equations self-consistently using a finite difference method, the electrical conductivity ? and Seebeck coefficient S of the material are numerically computed. The BTE is solved by using a finite volume method to obtain the phonon thermal conductivity k{sub p} and the Wiedemann-Franz law is used to obtain the electronic thermal conductivity k{sub e}. The figure of merit of nanoporous silicon is calculated by ZT=S{sup 2}?T/(k{sub p}+k{sub e}). The effects of doping density, porosity, temperature, and nanopore size on thermoelectric properties of nanoporous silicon are investigated. It is confirmed that nanoporous silicon has significantly higher thermoelectric energy conversion efficiency than its nonporous counterpart. Specifically, this study shows that, with a n-type doping density of 10{sup 20}?cm{sup –3}, a porosity of 36% and nanopore size of 3 nm ×?3?nm, the figure of merit ZT can reach 0.32 at 600?K. The results also show that the degradation of electrical conductivity of nanoporous Si due to the inclusion of nanopores is compensated by the large reduction in the phonon thermal conductivity and increase of absolute value of the Seebeck coefficient, resulting in a significantly improved ZT.

  3. Characterization of nitrided silicon-silicon dioxide interfaces

    SciTech Connect (OSTI)

    Polignano, M.L.; Alessandri, M.; Brazzelli, D. [and others

    2000-07-01T23:59:59.000Z

    A newly-developed technique for the simultaneous characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This technique is based upon surface recombination velocity measurements, and does not require the formation of a capacitor structure, so it is very suitable for the characterization of as-grown interfaces. Oxides grown both in dry and in wet environments were considered, and nitridation processes in N{sub 2}O and in NO were compared to N{sub 2} annealing processes. The effect of nitridation temperature and duration were also studied, and RTO/RTN processes were compared to conventional furnace nitridation processes. Surface recombination velocity was correlated with nitrogen concentration at the oxide-silicon interface obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements. Surface recombination velocity (hence surface state density) decreases with increasing nitrogen pile-up at the oxide-silicon interface, indicating that in nitrided interfaces surface state density is limited by nitridation. NO treatments are much more effective than N{sub 2}O treatments in the formation of nitrogen-rich interface layer and, as a consequence, in surface state reduction. Surface state density was measured in fully processed wafers before and after constant current stress. After a complete device process surface states are annealed out by hydrogen passivation, however they are reactivated by the electrical stress, and surface state results after stress were compared with data of surface recombination velocity in as-processed wafers.

  4. Designing Small Silicon Quantum Dots with Low Reorganization Energy

    E-Print Network [OSTI]

    Zang, Xiaoning

    2015-01-01T23:59:59.000Z

    A first principles, excited state analysis is carried out to identify ways of producing silicon quantum dots with low excitonic reorganization energy. These focus on the general strategy of either reducing or constraining exciton-phonon coupling, and four approaches are explored. The results can be implemented in quantum dot solids to mitigate polaronic effects and increase the lifetime of coherent excitonic superpositions. It is demonstrated that such designs can also be used to alter the shape of the spectral density for reorganization so as to reduce the rates of both decoherence and dissipation. The results suggest that it may be possible to design quantum dot solids that support partially coherent exciton transport.

  5. Evaluation of CVD silicon carbide for synchrotron radiation mirrors

    SciTech Connect (OSTI)

    Takacs, P.Z.

    1981-07-01T23:59:59.000Z

    Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods.

  6. A Patterned 3D Silicon Anode Fabricated by Electrodeposition on a Virus-Structured Current Collector

    SciTech Connect (OSTI)

    Chen, X L; Gerasopoulos, K; Guo, J C; Brown, A; Wang, Chunsheng; Ghodssi, Reza; Culver, J N

    2011-01-01T23:59:59.000Z

    Electrochemical methods were developed for the deposition of nanosilicon onto a 3D virus-structured nickel current collector. This nickel current collector is composed of self-assembled nanowire-like rods of genetically modified tobacco mosaic virus (TMV1cys), chemically coated in nickel to create a complex high surface area conductive substrate. The electrochemically depo­sited 3D silicon anodes demonstrate outstanding rate performance, cycling stability, and rate capability. Electrodeposition thus provides a unique means of fabricating silicon anode materials on complex substrates at low cost.

  7. NATURE MATERIALS | VOL 12 | MARCH 2013 | www.nature.com/naturematerials 191 very technology is intimately related to a particular materials

    E-Print Network [OSTI]

    Curtarolo, Stefano

    NATURE MATERIALS | VOL 12 | MARCH 2013 | www.nature.com/naturematerials 191 E very technology is intimately related to a particular materials set. The steam engines that powered the industrial revolution by silicon. Once a material is chosen for a given technology, it gets locked with it because

  8. Physical understanding and modeling of chemical mechanical planarization in dielectric materials

    E-Print Network [OSTI]

    Xie, Xiaolin, Ph. D. Massachusetts Institute of Technology

    2007-01-01T23:59:59.000Z

    Chemical mechanical planarization (CMP) has become the enabling planarization technique of choice for current and emerging silicon integrated circuit (IC) fabrication processes. This work studies CMP in dielectric materials ...

  9. Bitcoin and the Age of Bespoke Silicon

    E-Print Network [OSTI]

    Wang, Deli

    Bitcoin and the Age of Bespoke Silicon Michael B. Taylor Associate Professor University of California, San Diego #12;This Talk Introduction An Overview of the Bitcoin Cryptocurrency Bitcoin's Computing Evolution Bespoke Silicon #12;Interesting Facts about Bitcoin The most successful digital

  10. Heterogeneous lithium niobate photonics on silicon substrates

    E-Print Network [OSTI]

    Fathpour, Sasan

    Heterogeneous lithium niobate photonics on silicon substrates Payam Rabiei,1,* Jichi Ma,1 Saeed-confined lithium niobate photonic devices and circuits on silicon substrates is reported based on wafer bonding high- performance lithium niobate microring optical resonators and Mach- Zehnder optical modulators

  11. Materials Scientist

    Broader source: Energy.gov [DOE]

    Alternate Title(s):Materials Research Engineer; Metallurgical/Chemical Engineer; Product Development Manager;

  12. D0 silicon microstrip tracker

    SciTech Connect (OSTI)

    Burdin, Sergey

    2005-11-01T23:59:59.000Z

    The D0 Run II silicon microstrip tracker (SMT) has 3 square meters of Si area. There are 792,576 channels read out by 6192 SVXIIe chips on 912 read out modules. The SMT provides track and vertex reconstruction capabilities over the full pseudorapidity coverage of the D0 detector. The full detector has been running successfully since April 2002. This presentation covers the experience in commissioning and operating, the recent electronics upgrade which improved stability of the SMT and estimates of the radiation damage.

  13. Silicon Cells | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with form HistoryRistma AGShandongShirkeSichuan MiyiSichuanVista,SilicioSilicon

  14. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01T23:59:59.000Z

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  15. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02T23:59:59.000Z

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  16. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21T23:59:59.000Z

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  17. Structural Analysis of Human and Bovine Bone for Development of Synthetic Materials

    E-Print Network [OSTI]

    Jang, Eunhwa

    2012-10-19T23:59:59.000Z

    by US Composite (West Palm Beach, Florida). The silicone was manufactured by General Electric Company (Huntersvile, North Carolina, USA) and purchased at local commercial supplier. The geopolymer was made of Metakaolin (MetaMax®, BASF catalysts LLC...

  18. Laser shock ignition of porous silicon based nano-energetic films

    SciTech Connect (OSTI)

    Plummer, A.; Gascooke, J.; Shapter, J. [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Kuznetsov, V. A., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Weapons and Combat Systems Division, Defence Science and Technology Organisation, Edinburgh 5111 (Australia); Voelcker, N. H., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [Mawson Institute, University of South Australia, 5095, Mawson Lakes (Australia)

    2014-08-07T23:59:59.000Z

    Nanoporous silicon films on a silicon wafer were loaded with sodium perchlorate and initiated using illumination with infrared laser pulses to cause laser thermal ignition and laser-generated shock waves. Using Photon Doppler Velocimetry, it was determined that these waves are weak stress waves with a threshold intensity of 131?MPa in the silicon substrate. Shock generation was achieved through confinement of a plasma, generated upon irradiation of an absorptive paint layer held against the substrate side of the wafer. These stress waves were below the threshold required for sample fracturing. Exploiting either the laser thermal or laser-generated shock mechanisms of ignition may permit use of pSi energetic materials in applications otherwise precluded due to their environmental sensitivity.

  19. Impact of dislocations and dangling bond defects on the electrical performance of crystalline silicon thin films

    SciTech Connect (OSTI)

    Steffens, S.; Becker, C., E-mail: christiane.becker@helmholtz-berlin.de; Amkreutz, D.; Schnegg, A.; Abou-Ras, D.; Lips, K.; Rech, B. [Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin (Germany); Klossek, A. [Brandenburgische Technische Universität, Cottbus (Germany); Kittler, M. [Brandenburgische Technische Universität, Cottbus (Germany); IHP Microelectronics, Frankfurt (Oder) (Germany); Chen, Y.-Y. [Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin (Germany); Green Energy and Environment Research Labs, Industrial Technology Research Institute, Hsinchu, Taiwan (China); Klingsporn, M. [IHP Microelectronics, Frankfurt (Oder) (Germany)

    2014-07-14T23:59:59.000Z

    A wide variety of liquid and solid phase crystallized silicon films are investigated in order to determine the performance limiting defect types in crystalline silicon thin-film solar cells. Complementary characterization methods, such as electron spin resonance, photoluminescence, and electron microscopy, yield the densities of dangling bond defects and dislocations which are correlated with the electronic material quality in terms of solar cell open circuit voltage. The results indicate that the strongly differing performance of small-grained solid and large-grain liquid phase crystallized silicon can be explained by intra-grain defects like dislocations rather than grain boundary dangling bonds. A numerical model is developed containing both defect types, dislocations and dangling bonds, describing the experimental results.

  20. Mechanical Research and Development of monocrystalline silicon neutron beam window for CSNS

    E-Print Network [OSTI]

    Zhou Liang; Qu Hua-Min

    2014-11-24T23:59:59.000Z

    The monocrystalline silicon neutron beam window is one of the key components of neutron spectrometers and thin circular plate.Monocrystalline silicon is a brittle material and its strength is not constant but is consistent with the Weibull distribution. The window is designed not simply through the average strength, but according to the survival rate. Bending deformation is the main form of the window, so dangerous parts of the neutron beam window is stress-linearized to the combination of membrane stress and bending stress. According to the Weibull distribution of bending strength of monocrystalline silicon based on a large number of experimental data, finally the optimized neutron beam window is 1.5mm thick. Its survival rate is 0.9994 and its transmittance is 0.98447; it meets both physical requirements and the mechanical strength.

  1. On silicon group elements ejected by supernovae type IA

    SciTech Connect (OSTI)

    De, Soma; Timmes, F. X. [School of Earth and Space Exploration, Arizona State University, Tempe, AZ (United States); Brown, Edward F. [Joint Institute for Nuclear Astrophysics, University of Notre Dame, IN 46556 (United States); Calder, Alan C. [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY (United States); Townsley, Dean M. [Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL (United States); Athanassiadou, Themis [Swiss National Supercomputing Centre, Via Trevano 131, 6900 Lugano (Switzerland); Chamulak, David A. [Physics Division, Argonne National Laboratory, Argonne, IL (United States); Hawley, Wendy [Laboratoire d'Astrophysique de Marseille, Marseille cedex 13 F-13388 (France); Jack, Dennis, E-mail: somad@asu.edu [Departamento de Astronomía, Universidad de Guanajuato, Apartado Postal 144, 36000 Guanajuato (Mexico)

    2014-06-01T23:59:59.000Z

    There is evidence that the peak brightness of a Type Ia supernova is affected by the electron fraction Y {sub e} at the time of the explosion. The electron fraction is set by the aboriginal composition of the white dwarf and the reactions that occur during the pre-explosive convective burning. To date, determining the makeup of the white dwarf progenitor has relied on indirect proxies, such as the average metallicity of the host stellar population. In this paper, we present analytical calculations supporting the idea that the electron fraction of the progenitor systematically influences the nucleosynthesis of silicon group ejecta in Type Ia supernovae. In particular, we suggest the abundances generated in quasi-nuclear statistical equilibrium are preserved during the subsequent freeze-out. This allows potential recovery of Y {sub e} at explosion from the abundances recovered from an observed spectra. We show that measurement of {sup 28}Si, {sup 32}S, {sup 40}Ca, and {sup 54}Fe abundances can be used to construct Y {sub e} in the silicon-rich regions of the supernovae. If these four abundances are determined exactly, they are sufficient to recover Y {sub e} to 6%. This is because these isotopes dominate the composition of silicon-rich material and iron-rich material in quasi-nuclear statistical equilibrium. Analytical analysis shows the {sup 28}Si abundance is insensitive to Y {sub e}, the {sup 32}S abundance has a nearly linear trend with Y {sub e}, and the {sup 40}Ca abundance has a nearly quadratic trend with Y {sub e}. We verify these trends with post-processing of one-dimensional models and show that these trends are reflected in the model's synthetic spectra.

  2. Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes

    SciTech Connect (OSTI)

    Wei, Ying [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); College of Chemistry and Chemical Engineering, Bohai University, Jinzhou 121000 (China); Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China)

    2013-10-15T23:59:59.000Z

    Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery.

  3. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide andNationalallGeneral

  4. General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbelllong version)ConfinementGeneral Tables The

  5. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFundingGene ControlsCounsel Law StudentGeneral

  6. Editorial: Photovoltaic Materials and Devices

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Rupnowski, P.

    2012-01-01T23:59:59.000Z

    As the global energy needs grow, there is increasing interest in the generation of electricity by photovoltaics (PVs) devices or solar cells - devices that convert sunlight to electricity. Solar industry has seen an enormous growth during the last decade. The sale of PV modules has exceeded 27 GW in 2011, with significant contributions to the market share from all technologies. While the silicon technology continues to have the dominant share, the other thin film technologies (CdTe, CIGS, a-Si, and organic PV) are experiencing fast growth. Increased production of silicon modules has led to a very rapid reduction in their price and remains as benchmark for other technologies. The PV industry is in full gear to commercialize new automated equipment for solar cell and module production, instrumentation for process monitoring technologies, and for implementation of other cost-reduction approaches, and extensive research continues to be carried out in many laboratories to improve the efficiency of solar cells and modules without increasing the production costs. A large variety of solar cells, which differ in the material systems used, design, PV structure, and even the principle of PV conversion, are designed to date. This special issue contains peer-reviewed papers in the recent developments in research related to broad spectrum of photovoltaic materials and devices. It contains papers on many aspects of solar cells-the growth and deposition, characterization, and new material development.

  7. Growth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix

    SciTech Connect (OSTI)

    Kole, Arindam; Chaudhuri, Partha, E-mail: erpc@iacs.res.in [Indian Association for the Cultivation of Science, 2A and 2B Raja S.C. Mullick Road, Jadavpur, Kolkata-700032 (India)

    2014-10-15T23:59:59.000Z

    A moderately low temperature (?800 °C) thermal processing technique has been described for the growth of the silicon quantum dots (Si-QD) within microcrystalline silicon carbide (?c-SiC:H) dielectric thin films deposited by plasma enhanced chemical vapour deposition (PECVD) process. The nanocrystalline silicon grains (nc-Si) present in the as deposited films were initially enhanced by aluminium induced crystallization (AIC) method in vacuum at a temperature of T{sub v} = 525 °C. The samples were then stepwise annealed at different temperatures T{sub a} in air ambient. Analysis of the films by FTIR and XPS reveal a rearrangement of the ?c-SiC:H network has taken place with a significant surface oxidation of the nc-Si domains upon annealing in air. The nc-Si grain size (D{sub XRD}) as calculated from the XRD peak widths using Scherrer formula was found to decrease from 7 nm to 4 nm with increase in T{sub a} from 250 °C to 800 °C. A core shell like structure with the nc-Si as the core and the surface oxide layer as the shell can clearly describe the situation. The results indicate that with the increase of the annealing temperature in air the oxide shell layer becomes thicker and the nc-Si cores become smaller until their size reduced to the order of the Si-QDs. Quantum confinement effect due to the SiO covered nc-Si grains of size about 4 nm resulted in a photoluminescence peak due to the Si QDs with peak energy at 1.8 eV.

  8. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, John M. (Albuquerque, NM)

    1993-01-01T23:59:59.000Z

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  9. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, J.M.

    1993-04-20T23:59:59.000Z

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  10. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, John M. (Albuquerque, NM)

    1992-01-01T23:59:59.000Z

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  11. Material Challenges and Perspectives

    SciTech Connect (OSTI)

    Choi, Daiwon; Wang, Wei; Yang, Zhenguo

    2011-12-14T23:59:59.000Z

    General history and principals of Li-ion battery, characterization techniques and terminology of its operation will be discussed and explained. Current Li-ion battery applications and comparison to other energy storage and conversion systems will be outlined. Chemistry, material and design of currently commercialized Li-ion batteries will be discussed including various electrode materials for cathodes and anodes. The electrode material candidates and its physical and chemical properties including crystal structure, capacity, cycling stability, cost and safety. Also, current limitations of Li-ion batteries will be discussed.

  12. Development of Spintronic Bandgap Materials

    SciTech Connect (OSTI)

    Levy, Jeremy; Awschalom, David; Floro, Jerrold

    2014-02-16T23:59:59.000Z

    The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for “spintronics bandgap materials”. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.

  13. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03T23:59:59.000Z

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  14. Kerfless Silicon Precursor Wafer Formed by Rapid Solidification: October 2009 - March 2010

    SciTech Connect (OSTI)

    Lorenz, A.

    2011-06-01T23:59:59.000Z

    1366 Direct Wafer technology is an ultra-low-cost, kerfless method of producing crystalline silicon wafers compatible with the existing dominant silicon PV supply chain. By doubling utilization of silicon and simplifying the wafering process and equipment, Direct Wafers will support drastic reductions in wafer cost and enable module manufacturing costs < $1/W. This Pre-Incubator subcontract enabled us to accelerate the critical advances necessary to commercialize the technology by 2012. Starting from a promising concept that was initially demonstrated using a model material, we built custom equipment necessary to validate the process in silicon, then developed sufficient understanding of the underlying physics to successfully fabricate wafers meeting target specifications. These wafers, 50 mm x 50 mm x 200 ..mu..m thick, were used to make prototype solar cells via standard industrial processes as the project final deliverable. The demonstrated 10% efficiency is already impressive when compared to most thin films, but still offers considerable room for improvement when compared to typical crystalline silicon solar cells.

  15. An all-silicon single-photon source by unconventional photon blockade

    E-Print Network [OSTI]

    H. Flayac; D. Gerace; V. Savona

    2015-03-10T23:59:59.000Z

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area.

  16. Performance of MHD insulating materials in a potassium environment

    SciTech Connect (OSTI)

    Natesan, K.; Park, J.H.; Rink, D.L. (Argonne National Lab., IL (United States)); Thomas, C.A. (USDOE Pittsburgh Energy Technology Center, PA (United States))

    1991-12-01T23:59:59.000Z

    The objectives of this study are to evaluate the compatibility of the MHD insulating materials boron nitride and silicon nitride in a potassium environment at temperatures of 1000 and 1400{degrees}F (538 and 760{degrees}C, respectively) and to measure the electrical conductivities of the specimens before and after exposure to potassium. Based on the test results, an assessment is to be made of the suitability of these materials for application as insulator materials in an MHD channel.

  17. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

    1999-01-01T23:59:59.000Z

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  18. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, A.V.; Balooch, M.; Moalem, M.

    1999-01-19T23:59:59.000Z

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C{sub 60} precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C{sub 60} with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C{sub 60} on silicon dioxide at surface temperatures less than 1250 K. 5 figs.

  19. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect (OSTI)

    Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

    1992-03-01T23:59:59.000Z

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  20. Effect of environmental stress on Sylgard 170 silicone elastomer

    SciTech Connect (OSTI)

    Buckalew, W.H.; Wyant, F.J.

    1985-05-01T23:59:59.000Z

    Dow Corning Sylgard 170 Silicone Elastomer has been investigated to characterize its response to accelerated thermal aging, radiation exposure, and its behavior under applied compressive forces. Sylgard 170 response to accelerated thermal aging suggests the material properties are not particularly age dependent. Radiation exposures, however, produce significant, monotonic changes in both elongation and hardness with increasing absorbed radiation dose. Elastomer response to an applied compressive force was strongly dependent on environment temperature and degree of material confinement. Variations in temperature produced large changes in compressive forces applied to confined samples. Attempts to mitigate force fluctuations by means of pressure relief paths resulted in total loss of the applied compressive force. Thus, seal applications employing this elastomer in Class 1E equipment required to function during or following an accident should consider the potential loss of compressive force from long-term aging and potential LOCA-temperature transient conditions.

  1. General Physics II Exam 5 -Chs. 30, 31 -Nuclear Physics May 11, 2010 Name Rec. Instr. Rec. Time

    E-Print Network [OSTI]

    Wysin, Gary

    General Physics II Exam 5 - Chs. 30, 31 - Nuclear Physics May 11, 2010 Name Rec. Instr. Rec. Time C + p ? a. oxygen (O) b. nitrogen (N) c. boron (B) d. silicon (Si) 7. (2) A nucleus has a binding

  2. Thermoelectric materials having porosity

    DOE Patents [OSTI]

    Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir; Harris, Fred

    2014-08-05T23:59:59.000Z

    A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

  3. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect (OSTI)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01T23:59:59.000Z

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  4. Composit, Nanoparticle-Based Anode material for Li-ion Batteries Applied in Hybrid Electric (HEV's)

    SciTech Connect (OSTI)

    Dr. Malgorzata Gulbinska

    2009-08-24T23:59:59.000Z

    Lithium-ion batteries are promising energy storage devices in hybrid and electric vehicles with high specific energy values ({approx}150 Wh/kg), energy density ({approx}400 Wh/L), and long cycle life (>15 years). However, applications in hybrid and electric vehicles require increased energy density and improved low-temperature (<-10 C) performance. Silicon-based anodes are inexpensive, environmentally benign, and offer excellent theoretical capacity values ({approx}4000 mAh/g), leading to significantly less anode material and thus increasing the overall energy density value for the complete battery (>500 Wh/L). However, tremendous volume changes occur during cycling of pure silicon-based anodes. The expansion and contraction of these silicon particles causes them to fracture and lose electrical contact to the current collector ultimately severely limiting their cycle life. In Phase I of this project Yardney Technical Products, Inc. proposed development of a carbon/nano-silicon composite anode material with improved energy density and silicon's cycleability. In the carbon/nano-Si composite, silicon nanoparticles were embedded in a partially-graphitized carbonaceous matrix. The cycle life of anode material would be extended by decreasing the average particle size of active material (silicon) and by encapsulation of silicon nanoparticles in a ductile carbonaceous matrix. Decreasing the average particle size to a nano-region would also shorten Li-ion diffusion path and thus improve rate capability of the silicon-based anodes. Improved chemical inertness towards PC-based, low-temperature electrolytes was expected as an additional benefit of a thin, partially graphitized coating around the active electrode material.

  5. Materials Science and Engineering A 472 (2008) 242250 Shear behavior of aluminum lattice truss sandwich panel structures

    E-Print Network [OSTI]

    Wadley, Haydn

    2008-01-01T23:59:59.000Z

    ; Aluminum alloys; Brazing 1. Introduction Millimeter cell size, aluminum alloy lattice structures alloys such as copper/beryllium [26], aluminum/silicon [27­30] and silicon brass [27]. HoweverMaterials Science and Engineering A 472 (2008) 242­250 Shear behavior of aluminum lattice truss

  6. Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Deng & Schiff, Amorphous Silicon Based Solar Cells rev. 7/30/2002, Page 1 Amorphous Silicon Based Solar Cells Xunming Deng and Eric A. Schiff Table of Contents 1 Overview 3 1.1 Amorphous Silicon: The First Bipolar Amorphous Semiconductor 3 1.2 Designs for Amorphous Silicon Solar Cells: A Guided Tour 6

  7. Lead carbonate scintillator materials

    DOE Patents [OSTI]

    Derenzo, Stephen E. (Pinole, CA); Moses, William W. (Berkeley, CA)

    1991-01-01T23:59:59.000Z

    Improved radiation detectors containing lead carbonate or basic lead carbonate as the scintillator element are disclosed. Both of these scintillators have been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to other known scintillator materials. The radiation detectors disclosed are favorably suited for use in general purpose detection and in medical uses.

  8. Protein separations using porous silicon membranes

    E-Print Network [OSTI]

    Pass, Shannon Marie

    1992-01-01T23:59:59.000Z

    charge or as the absence of an electron in the crystal structure of silicon. The properties of boron doped siTicon are exploited experimentally by setting up an etch cell in which one surface of the silicon serves as the anode and by using... terminals located on the top surface of the etch cell. The current to be used in the experiment and the total time were previously calculated to produce the desired average pore size and porous silicon film thickness, respectively. The power source...

  9. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01T23:59:59.000Z

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  10. Structural Integration of Silicon Solar Cells and Lithium-ion Batteries Using Printed Electronics

    E-Print Network [OSTI]

    Kang, Jin Sung

    2012-01-01T23:59:59.000Z

    Hahn, H. T. , "Photovoltaic Performance of Amorphous SiliconHahn, H. T. , "Photovoltaic Performance of Amorphous SiliconYS, Hahn HT. Photovoltaic Performance of Amorphous Silicon

  11. amorphous silicon thin-film: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    amorphous silicon Kanicki, Jerzy 17 Integration of amorphous and polycrystalline silicon thin-film transistors through selective crystallization of amorphous silicon Engineering...

  12. A NEW A15 MULTIFILAMENTARY SUPERCONDUCTOR BASED ON THE NIOBIUM-ALUMINUM-SILICON SYSTEM

    E-Print Network [OSTI]

    Quinn, G.C.

    2011-01-01T23:59:59.000Z

    BASED ON THE NIOBIUM-ALUMINUM-SILICON SYSTEM Gary C. Quinnpsi. Photomicrograph of an Aluminum-Silicon eutectic filledmultifilimentary niobium-aluminum-silicon wire, a) sample #

  13. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01T23:59:59.000Z

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  14. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, R.; Baik, S.

    1985-11-12T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic. 4 figs.

  15. Use of free silicon in liquid phase sintering of silicon nitrides and sialons

    DOE Patents [OSTI]

    Raj, Rishi (Ithaca, NY); Baik, Sunggi (Ithaca, NY)

    1985-11-12T23:59:59.000Z

    This invention relates to the production of improved high density nitrogen based ceramics by liquid-phase densification of silicon nitride or a compound of silicon-nitrogen-oxygen-metal, e.g. a sialon. In the process and compositions of the invention minor amounts of finely divided silicon are employed together with the conventional liquid phase producing additives to enhance the densification of the resultant ceramic.

  16. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect (OSTI)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26T23:59:59.000Z

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

  17. Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006

    SciTech Connect (OSTI)

    Wohlgemuth, J.; Narayanan, M.

    2006-07-01T23:59:59.000Z

    The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

  18. Advanced Materials and Processing of Composites for High Volume...

    Broader source: Energy.gov (indexed) [DOE]

    Focal Project 4: Structural Automotive Components from Composite Materials Advanced Materials and Processing of Composites for High Volume Applications Libby Berger (General...

  19. Engineering of silicon/HfO{sub 2} interface by variable energy proton irradiation

    SciTech Connect (OSTI)

    Maurya, Savita, E-mail: mauryasavita5@gmail.com; Maringanti, Radhakrishna [Division of Electronics and Microelectronics, Indian Institute of Information Technology, Allahabad, Uttar Pradesh 211012 (India); Tribedi, L. C. [DNAP, Tata Institute of Fundamental Research, Mumbai, Maharashtra 400005 (India)

    2014-08-18T23:59:59.000Z

    Surfaces and interfaces between materials are of paramount importance for various phenomena, such as painting a house, catalyst driven chemical reactions, intricate life processes, corrosion of materials, and fabrication of various semiconductor devices. Interface of silicon or other such substrates with any of the oxides has profound effect on the performance of metal oxide field effect transistors and other similar devices. Since a surface is an abrupt termination of a periodic crystal, surface atoms will have some unsaturated valence electrons and these unsaturated bonds at the semiconductor surface make it chemically highly reactive. Other than annealing, there is not much that can be done to manage these unsaturated bonds. This study was initiated to explore the possibility of repairing these unsaturated dangling bonds that are formed at the silicon and oxide interface during the deposition of oxide layer above silicon, by the use of proton irradiation. In order to improve the interface characteristics, we present a method to modify the interface of silicon and hafnium dioxide after its fabrication, through proton irradiation. Results of the study are promising and probably this method might be used along with other methods such as annealing to modify the interface, after its fabrication.

  20. Optical absorption of silicon nanowires

    SciTech Connect (OSTI)

    Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Institut d'Electronique et de Microelectronique et de Nanotechnologies, IEMN (CNRS, UMR 8520), Groupe de Physique, Cite scientifique, avenue Poincare, 59652 Villeneuve d'Ascq (France); Lambert, Y.; Krzeminski, C.; Grandidier, B.; Stievenard, D.; Leveque, G.; Akjouj, A.; Pennec, Y.; Djafari-Rouhani, B. [Institut d'Electronique et de Microelectronique et de Nanotechnologies, IEMN (CNRS, UMR 8520), Groupe de Physique, Cite scientifique, avenue Poincare, 59652 Villeneuve d'Ascq (France)

    2012-08-01T23:59:59.000Z

    We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods: the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the finite difference time domain (FDTD) method, is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies that allow to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

  1. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, V.K.

    1990-08-21T23:59:59.000Z

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  2. Electrifying inks with 2D materials

    E-Print Network [OSTI]

    Torrisi, Felice; Coleman, Jonathan N.

    2014-10-06T23:59:59.000Z

    conventional silicon-based technologies. Electronic devices including radio-frequency identification (RFID) tags, light emitting diodes, batteries, and transistors can be built by printing liquid-dispersed functional materials such as organic polymers... , mechanical robustness, environmental stability and potential for low-cost production. Before an ink can be produced, graphene must first be dispersed as nanosheets in a liquid. Graphene suspensions can be produced from graphite by oxidization to produce...

  3. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    SciTech Connect (OSTI)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-12-31T23:59:59.000Z

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p{sup {minus}} porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n{sup +} and p{sup +} porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

  4. Nano-Optoelectronic Integration on Silicon

    E-Print Network [OSTI]

    Chen, Roger

    2012-01-01T23:59:59.000Z

    Crystal Si Nanopillars,” Nano Lett. , vol. 10, no. 11, pp.?V Nanowires on Silicon,” Nano Letters, vol. 4, no. 10, pp.and nanoribbon lasers,” Nano Letters, vol. 4, no. 2, pp.

  5. Silver transport in CVD silicon carbide

    E-Print Network [OSTI]

    MacLean, Heather J. (Heather Jean), 1974-

    2004-01-01T23:59:59.000Z

    Ion implantation and diffusion couple experiments were used to study silver transport through and release from CVD silicon carbide. Results of these experiments show that silver does not migrate via classical diffusion in ...

  6. High index contrast platform for silicon photonics

    E-Print Network [OSTI]

    Akiyama, Shoji, 1972-

    2004-01-01T23:59:59.000Z

    This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

  7. Femtosecond laser processing of crystalline silicon

    E-Print Network [OSTI]

    Tran, D. V.

    This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) ...

  8. Designing manycore processor networks using silicon photonics

    E-Print Network [OSTI]

    Stojanovic, Vladimir Marko

    We present a vertical integration approach for designing silicon photonic networks for communication in manycore systems. Using a top-down approach we project the photonic device requirements for a 64-tile system designed ...

  9. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02T23:59:59.000Z

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  10. Device integration for silicon microphotonic platforms

    E-Print Network [OSTI]

    Lim, Desmond Rodney

    2000-01-01T23:59:59.000Z

    Silicon ULSI compatible, high index contrast waveguides and devices provide high density integration for optical networking and on-chip optical interconnects. Four such waveguide systems were fabricated and analyzed: ...

  11. Electrical characterization of germanium-silicon alloy

    E-Print Network [OSTI]

    Kishore, Kumar P.

    1994-01-01T23:59:59.000Z

    . The fabrication procedure involved sputter deposition of silicon dioxide, oxide patterning, deposition of aluminum metal and metal patterning. Each test structure was square-shaped and consisted of eight sets of peripheral metal contacts. The results...

  12. Electrical characterization of germanium-silicon alloy 

    E-Print Network [OSTI]

    Kishore, Kumar P.

    1994-01-01T23:59:59.000Z

    . The fabrication procedure involved sputter deposition of silicon dioxide, oxide patterning, deposition of aluminum metal and metal patterning. Each test structure was square-shaped and consisted of eight sets of peripheral metal contacts. The results...

  13. Silicon cast wafer recrystallization for photovoltaic applications

    E-Print Network [OSTI]

    Hantsoo, Eerik T. (Eerik Torm)

    2008-01-01T23:59:59.000Z

    Current industry-standard methods of manufacturing silicon wafers for photovoltaic (PV) cells define the electrical properties of the wafer in a first step, and then the geometry of the wafer in a subsequent step. The ...

  14. Texturization of multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Li, Dai-Yin

    2010-01-01T23:59:59.000Z

    A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

  15. Method for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1992-12-15T23:59:59.000Z

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  16. Apparatus for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1995-04-04T23:59:59.000Z

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  17. Material and processes selection in conceptual design 

    E-Print Network [OSTI]

    Krishnakumar, Karthikeyan

    2005-02-17T23:59:59.000Z

    Materials and manufacturing processes are an integral part of the design of a product. The need to combine materials and manufacturing processes selection during the early stages of the design has previously been realized. The work that generally...

  18. Polycrystalline silicon resistor trimming by laser annealing 

    E-Print Network [OSTI]

    Crowley, Robert Terrence

    1989-01-01T23:59:59.000Z

    . ~ The single crystal band structure of silicon is applicable inside each grain. ~ Carrier trapping sites exist at the grain boundary with an area density of qq cm . These traps are filled with a density of n, cm ~ The traps are monovalent and located..., and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal...

  19. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect (OSTI)

    Carey, JE; Mazur, E

    2005-05-19T23:59:59.000Z

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  20. Sampling Artifacts from Conductive Silicone Tubing

    SciTech Connect (OSTI)

    Timko, Michael T.; Yu, Zhenhong; Kroll, Jesse; Jayne, John T.; Worsnop, Douglas R.; Miake-Lye, Richard C.; Onasch, Timothy B.; Liscinsky, David; Kirchstetter, Thomas W.; Destaillats, Hugo; Holder, Amara L.; Smith, Jared D.; Wilson, Kevin R.

    2009-05-15T23:59:59.000Z

    We report evidence that carbon impregnated conductive silicone tubing used in aerosol sampling systems can introduce two types of experimental artifacts: 1) silicon tubing dynamically absorbs carbon dioxide gas, requiring greater than 5 minutes to reach equilibrium and 2) silicone tubing emits organic contaminants containing siloxane that adsorb onto particles traveling through it and onto downstream quartz fiber filters. The consequence can be substantial for engine exhaust measurements as both artifacts directly impact calculations of particulate mass-based emission indices. The emission of contaminants from the silicone tubing can result in overestimation of organic particle mass concentrations based on real-time aerosol mass spectrometry and the off-line thermal analysis of quartz filters. The adsorption of siloxane contaminants can affect the surface properties of aerosol particles; we observed a marked reduction in the water-affinity of soot particles passed through conductive silicone tubing. These combined observations suggest that the silicone tubing artifacts may have wide consequence for the aerosol community and should, therefore, be used with caution. Gentle heating, physical and chemical properties of the particle carriers, exposure to solvents, and tubing age may influence siloxane uptake. The amount of contamination is expected to increase as the tubing surface area increases and as the particle surface area increases. The effect is observed at ambient temperature and enhanced by mild heating (<100 oC). Further evaluation is warranted.

  1. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01T23:59:59.000Z

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  2. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2013

    E-Print Network [OSTI]

    .19 billion. Three companies produced silicon materials in seven plants, all east of the Mississippi River company produced both products at two plants. Most ferrosilicon was consumed in the ferrous foundry producers of aluminum and aluminum alloys and the chemical industry. The semiconductor and solar industries

  3. Radiation Machines and Radioactive Materials (Iowa)

    Broader source: Energy.gov [DOE]

    These chapters describe general provisions and regulatory requirements; registration, licensure, and transportation of radioactive materials; and exposure standards for radiation protection.

  4. Nondestructive evaluation of advanced ceramic composite materials

    SciTech Connect (OSTI)

    Lott, L.A.; Kunerth, D.C.; Walter, J.B.

    1991-09-01T23:59:59.000Z

    Nondestructive evaluation techniques were developed to characterize performance degrading conditions in continuous fiber-reinforced silicon carbide/silicon carbide composites. Porosity, fiber-matrix interface bond strength, and physical damage were among the conditions studied. The material studied is formed by chemical vapor infiltration (CVI) of the matrix material into a preform of woven reinforcing fibers. Acoustic, ultrasonic, and vibration response techniques were studied. Porosity was investigated because of its inherent presence in the CVI process and of the resultant degradation of material strength. Correlations between porosity and ultrasonic attenuation and velocity were clearly demonstrated. The ability of ultrasonic transmission scanning techniques to map variations in porosity in a single sample was also demonstrated. The fiber-matrix interface bond was studied because of its importance in determining the fracture toughness of the material. Correlations between interface bonding and acoustic and ultrasonic properties were observed. These results are presented along with those obtained form acoustic and vibration response measurements on material samples subjected to mechanical impact damage. This is the final report on research sponsored by the US Department of Energy, Fossil Energy Advanced Research and Technology Development Materials Program. 10 refs., 24 figs., 2 tabs.

  5. Scintillator material

    DOE Patents [OSTI]

    Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

    1994-01-01T23:59:59.000Z

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

  6. Scintillator material

    DOE Patents [OSTI]

    Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

    1992-01-01T23:59:59.000Z

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

  7. Scintillator material

    DOE Patents [OSTI]

    Anderson, D.F.; Kross, B.J.

    1992-07-28T23:59:59.000Z

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

  8. Scintillator material

    DOE Patents [OSTI]

    Anderson, D.F.; Kross, B.J.

    1994-06-07T23:59:59.000Z

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

  9. Critical Materials:

    Broader source: Energy.gov (indexed) [DOE]

    lighting. 14 (bottom) Criticality ratings of shortlisted raw 76 materials. 15 77 2. Technology Assessment and Potential 78 This section reviews the major trends within...

  10. Hazard Sampling Dialog General Layout

    E-Print Network [OSTI]

    Zhang, Tao

    1 Hazard Sampling Dialog General Layout The dialog's purpose is to display information about the hazardous material being sampled by the UGV so either the system or the UV specialist can identify the risk level of the hazard. The dialog is associated with the hazmat reading icons (Table 1). Components

  11. Hole drift mobility measurements in amorphous silicon-carbon alloys Qing Gu, Qi Wang, and Eric A. Schiff

    E-Print Network [OSTI]

    Schiff, Eric A.

    in the elec- tronic properties and photovoltaic performance of amor- phous silicon alloys with widened band.`t As for a a-Sil-,Ge,:H, there is relatively little degradation as the band gap is modified. At the end). Additional information on photovoltaic properties and deposition procedures for similar materials are given

  12. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01T23:59:59.000Z

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  13. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G. (Gettysburg, PA)

    2011-11-01T23:59:59.000Z

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  14. Combustion Synthesis of Silicon Carbide 389 Combustion Synthesis of Silicon Carbide

    E-Print Network [OSTI]

    Mukasyan, Alexander

    Combustion Synthesis of Silicon Carbide 389 X Combustion Synthesis of Silicon Carbide Alexander S. Mukasyan University of Notre Dame USA 1. Introduction Combustion synthesis (CS) is an effective technique by which combustion synthesis can occur: self - propagating high-temperature synthesis (SHS) and volume

  15. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS Yongling Ren, Natalita M Nursam, Da Wang and Klaus J Weber Centre for Sustainable Energy Systems, College of Engineering and Computer Science, The Australian National University, Canberra, ACT 0200, Australia ABSTRACT

  16. Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2014-01-14T23:59:59.000Z

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  17. LPCVD SILICON NITRIDE-ON-SILICON SPACER TECHNOLOGY H. W. van Zeijl, L.K. Nanver

    E-Print Network [OSTI]

    Technische Universiteit Delft

    of obtaining self-aligned sub- lithographic dimensions. In many processes were spacers are applied to separate-etching affects the dimensions of the spacer which could lead to a lack of control over the spacer-related deviceLPCVD SILICON NITRIDE-ON-SILICON SPACER TECHNOLOGY H. W. van Zeijl, L.K. Nanver DIMES Delft

  18. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

    2014-09-01T23:59:59.000Z

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  19. Combinatorial sythesis of organometallic materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

    2002-07-16T23:59:59.000Z

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

  20. Combinatorial synthesis of novel materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

    1999-01-01T23:59:59.000Z

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.