National Library of Energy BETA

Sample records for general silicon material

  1. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-06-01

    Capabilities fact sheet for the National Center for Photovoltaics: Silicon Materials and Devices that includes scope, core competencies and capabilities, and contact/web information.

  2. Silicon Materials and Devices (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2013-06-01

    This National Center for Photovoltaics sheet describes the capabilities of its silicon materials and devices research. The scope and core competencies and capabilities are discussed.

  3. Holey Silicon as an Efficient Thermoelectric Material

    E-Print Network [OSTI]

    Tang, Jinyao

    2011-01-01

    Silicon as Efficient Thermoelectric Material Jinyao Tang 1,This work investigated the thermoelectric properties of thinat room temperature, the thermoelectric performance of HS is

  4. Method to prevent recession loss of silica and silicon-containing materials in combustion gas environments

    DOE Patents [OSTI]

    Brun, Milivoj Konstantin (Ballston Lake, NY); Luthra, Krishan Lal (Niskayuna, NY)

    2003-01-01

    While silicon-containing ceramics or ceramic composites are prone to material loss in combustion gas environments, this invention introduces a method to prevent or greatly reduce the thickness loss by injecting directly an effective amount, generally in the part per million level, of silicon or silicon-containing compounds into the combustion gases.

  5. Sputtered silicon oxynitride for microphotonics : a materials study

    E-Print Network [OSTI]

    Sandland, Jessica Gene, 1977-

    2005-01-01

    Silicon oxynitride (SiON) is an ideal waveguide material because the SiON materials system provides substantial flexibility in composition and refractive index. SiON can be varied in index from that of silicon dioxide ...

  6. Solar cell structure incorporating a novel single crystal silicon material

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  7. Amorphous Silicon as Semiconductor Material for High Resolution LAPS

    E-Print Network [OSTI]

    Moritz, Werner

    ) is limited by the properties of the semiconductor material used. We investigated metalAmorphous Silicon as Semiconductor Material for High Resolution LAPS Werner Moritz1 , Tatsuo-insulator- semiconductor (MIS) structures based on amorphous silicon (a-Si) prepared as a thin layer on transparent glass

  8. Effect of Heat Treatment on Silicon Carbide Based Joining Materials for Fusion Energy

    SciTech Connect (OSTI)

    Lewinsohn, Charles A.; Jones, Russell H.; Nozawa, T.; Kotani, M.; Kishimoto, H.; Katoh, Y.; Kohyama, A.

    2001-10-01

    Two general approaches to obtaining silicon carbide-based joint materials were used. The first method relies on reactions between silicon and carbon to form silicon carbide, or to bond silicon carbide powders together. The second method consists of pyrolysing a polycarbosilane polymer to yield an amorphous, covalently bonded material. In order to assess the long-term durability of the joint materials, various heat treatments were performed and the effects on the mechanical properties of the joints were measured. Although the joints derived from the polycarbosilane polymer were not the strongest, the value of strength measured was not affected by heat treatment. On the other hand, the value of the strength of the reaction-based joints was affected by heat treatment, indicating the presence of residual stresses or unreacted material subsequent to processing. Further investigation of reaction-based joining should consist of detailed microscopic studies; however, continued study of joints derived from polymers is also warranted.

  9. Electronic Supplementary Material Scalable preparation of porous silicon nanoparticles and

    E-Print Network [OSTI]

    Zhou, Chongwu

    Nano Res. Electronic Supplementary Material Scalable preparation of porous silicon nanoparticles with reduced graphene oxide Figure S2 TEM image of porous silicon nanoparticles after carbon coating and graphene wrapping. #12;www.theNanoResearch.comwww.Springer.com/journal/12274 | Nano R

  10. Method for forming fibrous silicon carbide insulating material

    DOE Patents [OSTI]

    Wei, George C. (Oak Ridge, TN)

    1984-01-01

    A method whereby silicon carbide-bonded SiC fiber composites are prepared from carbon-bonded C fiber composites is disclosed. Carbon-bonded C fiber composite material is treated with gaseous silicon monoxide generated from the reaction of a mixture of colloidal silica and carbon black at an elevated temperature in an argon atmosphere. The carbon in the carbon bond and fiber is thus chemically converted to SiC resulting in a silicon carbide-bonded SiC fiber composite that can be used for fabricating dense, high-strength high-toughness SiC composites or as thermal insulating materials in oxidizing environments.

  11. Porous silicon based anode material formed using metal reduction

    DOE Patents [OSTI]

    Anguchamy, Yogesh Kumar; Masarapu, Charan; Deng, Haixia; Han, Yongbong; Venkatachalam, Subramanian; Kumar, Sujeet; Lopez, Herman A.

    2015-09-22

    A porous silicon based material comprising porous crystalline elemental silicon formed by reducing silicon dioxide with a reducing metal in a heating process followed by acid etching is used to construct negative electrode used in lithium ion batteries. Gradual temperature heating ramp(s) with optional temperature steps can be used to perform the heating process. The porous silicon formed has a high surface area from about 10 m.sup.2/g to about 200 m.sup.2/g and is substantially free of carbon. The negative electrode formed can have a discharge specific capacity of at least 1800 mAh/g at rate of C/3 discharged from 1.5V to 0.005V against lithium with in some embodiments loading levels ranging from about 1.4 mg/cm.sup.2 to about 3.5 mg/cm.sup.2. In some embodiments, the porous silicon can be coated with a carbon coating or blended with carbon nanofibers or other conductive carbon material.

  12. Shaanxi Tianhong Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-Enhancing Capacity for Low EmissionTianhong Silicon Material Co Ltd Jump to:

  13. Materials Chemistry and Performance of Silicone-Based Replicating Compounds.

    SciTech Connect (OSTI)

    Brumbach, Michael T.; Mirabal, Alex James; Kalan, Michael; Trujillo, Ana B; Hale, Kevin

    2014-11-01

    Replicating compounds are used to cast reproductions of surface features on a variety of materials. Replicas allow for quantitative measurements and recordkeeping on parts that may otherwise be difficult to measure or maintain. In this study, the chemistry and replicating capability of several replicating compounds was investigated. Additionally, the residue remaining on material surfaces upon removal of replicas was quantified. Cleaning practices were tested for several different replicating compounds. For all replicating compounds investigated, a thin silicone residue was left by the replica. For some compounds, additional inorganic species could be identified in the residue. Simple solvent cleaning could remove some residue.

  14. Jinzhou Huari Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

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  15. Jinzhou Rixin Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro JumpHuari Silicon Material Co Ltd Jump

  16. Institute for Critical Technology and Applied Science Seminar Series Silicone Materials for Sustainable

    E-Print Network [OSTI]

    Crawford, T. Daniel

    ; these goals are critical for the broad adoption of PV globally. Silicone polymers possess key material The Photovoltaic (PV) industry has aggressive goals to decrease $/kWh and lower the overall cost of ownership; supporting new customers and new application areas for the use of silicones in the PV industry She also

  17. Germanium-rich silicon-germanium materials for field-effect modular application

    E-Print Network [OSTI]

    Jongthammanurak, Samerkhae

    2008-01-01

    The development of electric-field-induced optical modulation in the materials capable of monolithically integrated on silicon (Si) substrates offer the possibility of high-speed modulation in a pico second timeframe as ...

  18. Material and Energy Flows Associated with Select Metals in GREET 2. Molybdenum, Platinum, Zinc, Nickel, Silicon

    SciTech Connect (OSTI)

    Benavides, Pahola T.; Dai, Qiang; Sullivan, John L.; Kelly, Jarod C.; Dunn, Jennifer B.

    2015-09-01

    In this work, we analyzed the material and energy consumption from mining to production of molybdenum, platinum, zinc, and nickel. We also analyzed the production of solar- and semiconductor-grade silicon. We described new additions to and expansions of the data in GREET 2. In some cases, we used operating permits and sustainability reports to estimate the material and energy flows for molybdenum, platinum, and nickel, while for zinc and silicon we relied on information provided in the literature.

  19. Single crystal silicon as a macro-world structural material : application to compact, lightweight high pressure vessels

    E-Print Network [OSTI]

    Garza, Tanya Cruz

    2011-01-01

    Single crystal silicon has promising inherent structural properties which are attractive for weight sensitive applications. Single crystal silicon, however, is a brittle material which makes the usable strength that can ...

  20. High temperature investigations of crystalline silicon solar cell materials

    E-Print Network [OSTI]

    Hudelson, George David Stephen, III

    2009-01-01

    Crystalline silicon solar cells are a promising candidate to provide a sustainable, clean energy source for the future. In order to bring about widespread adoption of solar cells, much work is needed to reduce their cost. ...

  1. Use of silicon oxynitride as a sacrificial material for microelectromechanical devices

    DOE Patents [OSTI]

    Habermehl, Scott D. (Corrales, NM); Sniegowski, Jeffry J. (Edgewood, NM)

    2001-01-01

    The use of silicon oxynitride (SiO.sub.x N.sub.y) as a sacrificial material for forming a microelectromechanical (MEM) device is disclosed. Whereas conventional sacrificial materials such as silicon dioxide and silicate glasses are compressively strained, the composition of silicon oxynitride can be selected to be either tensile-strained or substantially-stress-free. Thus, silicon oxynitride can be used in combination with conventional sacrificial materials to limit an accumulation of compressive stress in a MEM device; or alternately the MEM device can be formed entirely with silicon oxynitride. Advantages to be gained from the use of silicon oxynitride as a sacrificial material for a MEM device include the formation of polysilicon members that are substantially free from residual stress, thereby improving the reliability of the MEM device; an ability to form the MEM device with a higher degree of complexity and more layers of structural polysilicon than would be possible using conventional compressively-strained sacrificial materials; and improved manufacturability resulting from the elimination of wafer distortion that can arise from an excess of accumulated stress in conventional sacrificial materials. The present invention is useful for forming many different types of MEM devices including accelerometers, sensors, motors, switches, coded locks, and flow-control devices, with or without integrated electronic circuitry.

  2. Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials

    E-Print Network [OSTI]

    Cui, Yi

    Large-Area Free-Standing Ultrathin Single-Crystal Silicon as Processable Materials Shuang Wang in electronics, biotechnology, and energy applications. Here we demonstrate large-area free- standing ultrathin of surface together with the interesting property of these free-standing ultrathin Si materials opens up

  3. GSMSolar formerly Shanghai General Silicon Material Co Ltd | Open Energy

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy ElectricalsFTL Solar JumpNetworkingGAOH OffshoreGHESolarGRR

  4. Materials Science and Engineering A259 (1999) 6572 Mechanical properties of oxidized silicon nitride ceramics

    E-Print Network [OSTI]

    Gubicza, Jenõ

    1999-01-01

    .g. hardness, elastic modulus) has not been studied. In the present paper the oxidation-induced changes of silicon nitride ceramics with four different compositions is studied. Room temperature values of bending strength and elastic modulus of the whole oxidized material and of hardness, the fracture toughness

  5. 17th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings

    SciTech Connect (OSTI)

    Sopori, B. L.

    2007-08-01

    The National Center for Photovoltaics sponsored the 17th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 5-8, 2007. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'Expanding Technology for a Future Powered by Si Photovoltaics.'

  6. Method of making silicon on insalator material using oxygen implantation

    DOE Patents [OSTI]

    Hite, Larry R. (Dallas, TX); Houston, Ted (Richardson, TX); Matloubian, Mishel (Dallas, TX)

    1989-01-01

    The described embodiments of the present invention provide a semiconductor on insulator structure providing a semiconductor layer less susceptible to single event upset errors (SEU) due to radiation. The semiconductor layer is formed by implanting ions which form an insulating layer beneath the surface of a crystalline semiconductor substrate. The remaining crystalline semiconductor layer above the insulating layer provides nucleation sites for forming a crystalline semiconductor layer above the insulating layer. The damage caused by implantation of the ions for forming an insulating layer is left unannealed before formation of the semiconductor layer by epitaxial growth. The epitaxial layer, thus formed, provides superior characteristics for prevention of SEU errors, in that the carrier lifetime within the epitaxial layer, thus formed, is less than the carrier lifetime in epitaxial layers formed on annealed material while providing adequate semiconductor characteristics.

  7. Composite materials and bodies including silicon carbide and titanium diboride and methods of forming same

    DOE Patents [OSTI]

    Lillo, Thomas M.; Chu, Henry S.; Harrison, William M.; Bailey, Derek

    2013-01-22

    Methods of forming composite materials include coating particles of titanium dioxide with a substance including boron (e.g., boron carbide) and a substance including carbon, and reacting the titanium dioxide with the substance including boron and the substance including carbon to form titanium diboride. The methods may be used to form ceramic composite bodies and materials, such as, for example, a ceramic composite body or material including silicon carbide and titanium diboride. Such bodies and materials may be used as armor bodies and armor materials. Such methods may include forming a green body and sintering the green body to a desirable final density. Green bodies formed in accordance with such methods may include particles comprising titanium dioxide and a coating at least partially covering exterior surfaces thereof, the coating comprising a substance including boron (e.g., boron carbide) and a substance including carbon.

  8. Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes; Summary Discussion Sessions

    SciTech Connect (OSTI)

    Sopori, B.; Swanson, D.; Sinton, R.; Stavola, M.; Tan, T.

    1998-12-08

    This report is a summary of the panel discussions included with the Eighth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme of the workshop was ''Supporting the Transition to World Class Manufacturing.'' This workshop provided a forum for an informal exchange of information between researchers in the photovoltaic and nonphotovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helped establish a knowledge base that can be used for improving device-fabrication processes to enhance solar-cell performance and reduce cell costs. It also provided an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research.

  9. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, Allon

    2010-01-01

    Quantum Dots: A General crystalline silicon, Nature 1991,1998, 31, 1927-1949. single-crystalline silicon nanowires byof their facilities. Single crystalline mesoporous silicon

  10. Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint

    SciTech Connect (OSTI)

    Goodrich, A.; Woodhouse, M.; Hacke, P.

    2012-06-01

    Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

  11. Low-dislocation-density silicon-on-insulator material produced by sequential oxygen implantation and low-temperature

    E-Print Network [OSTI]

    Florida, University of

    Low-dislocation-density silicon-on-insulator material produced by sequential oxygen implantation and low-temperature annealing D. Venables and K. S. Jones Department of Materials Science and Engineering. The development of cavities upon annealing was used in a sequential-implantation and low

  12. Generalized Hooke's law for isotropic second gradient materials

    E-Print Network [OSTI]

    F. dell'Isola; G. Sciarra; S. Vidoli

    2010-08-17

    In the spirit of Germain the most general objective stored elastic energy for a second gradient material is deduced using a literature result of Fortun\\'e & Vall\\'ee. Linear isotropic constitutive relations for stress and hyperstress in terms of strain and strain-gradient are then obtained proving that these materials are characterized by seven elastic moduli and generalizing previous studies by Toupin, Mindlin and Sokolowski. Using a suitable decomposition of the strain-gradient, it is found a necessary and sufficient condition, to be verified by the elastic moduli, assuring positive definiteness of the stored elastic energy. The problem of warping in linear torsion of a prismatic second gradient cylinder is formulated, thus obtaining a possible measurement procedure for one of the second gradient elastic moduli.

  13. Material requirements for the adoption of unconventional silicon crystal and wafer growth techniques for high-efficiency solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hofstetter, Jasmin; del Cañizo, Carlos; Wagner, Hannes; Castellanos, Sergio; Buonassisi, Tonio

    2015-10-15

    Silicon wafers comprise approximately 40% of crystalline silicon module cost and represent an area of great technological innovation potential. Paradoxically, unconventional wafer-growth techniques have thus far failed to displace multicrystalline and Czochralski silicon, despite four decades of innovation. One of the shortcomings of most unconventional materials has been a persistent carrier lifetime deficit in comparison to established wafer technologies, which limits the device efficiency potential. In this perspective article, we review a defect-management framework that has proven successful in enabling millisecond lifetimes in kerfless and cast materials. Control of dislocations and slowly diffusing metal point defects during growth, coupled tomore »effective control of fast-diffusing species during cell processing, is critical to enable high cell efficiencies. As a result, to accelerate the pace of novel wafer development, we discuss approaches to rapidly evaluate the device efficiency potential of unconventional wafers from injection-dependent lifetime measurements.« less

  14. Ninth workshop on crystalline silicon solar cell materials and processes: Summary discussion sessions

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Swanson, D.; Rosenblum, M.; Sinton, R.

    1999-11-23

    This report is a summary of the panel discussions included with the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. The theme for the workshop was ``R and D Challenges and Opportunities in Si Photovoltaics.'' This theme was chosen because it appropriately reflects a host of challenges that the growing production of Si photovoltaics will be facing in the new millennium. The anticipated challenges will arise in developing strategies for cost reduction, increased production, higher throughput per manufacturing line, new sources of low-cost Si, and the introduction of new manufacturing processes for cell production. At the same time, technologies based on CdTe and CIS will come on line posing new competition. With these challenges come new opportunities for Si PV to wean itself from the microelectronics industry, to embark on a more aggressive program in thin-film Si solar cells, and to try new approaches to process monitoring.

  15. Analysis of candidate silicon carbide recuperator materials exposed to industrial furnace environments

    SciTech Connect (OSTI)

    Federer, J.I.; Tiegs, T.N.; Kotchick, D.M.; Petrak, D.

    1985-07-01

    Several SiC ceramics were exposed to the combustion environment in six industrial furnaces to determine their corrosion resistance. The matrials were sintered-..cap alpha.. (Hexoloy SA), Sintride, recrystallized (NC-400), CVD SiC coated NC-400, siliconized (NC-430), reaction sintered (SC-X and KT), and Si/sub 3/N/sub 4/-bounded (C/75 and CN-178). Tubes of these materials were exposed in two aluminum remelt furnaces, a forge furnace, a steel reheat furnace, and two steel soaking pits at temperatures of 925 to 1250/sup 0/C for periods of 530 to 5545 h. Significant corrosion occurred in specimens exposed to aluminum remelt furnaces and one of the steel soaking pits, whereas corrosion in the other furnaces was substantially less or negligible. The average C-ring fracture strengths of Hexoloy SA and NC-430, the only materials so tested, were substantially affected by the exposures. The lowest strength in Hexoloy SA occurred in specimens exposed in an aluminum remelt furnace, while the lowest strength in NC-430 occurred in specimens exposed in a steel soaking pit. These results show that SiC ceramics are susceptible to both corrosion and strength degradation when exposed to certain furnace environments.

  16. Thermochemistry of Silicon-Hydrogen Compounds Generalized from Quantum Chemical Calculations

    E-Print Network [OSTI]

    Swihart, Mark T.

    Engineering, Northwestern UniVersity, 2145 Sheridan Road, EVanston, Illinois 60208, and Department of Chemical Engineering, UniVersity at Buffalo, 907 Furnas Hall, Buffalo, New York 14260 ReceiVed: June 10, 2003; In Final hydrides within silicon chemical vapor deposition processes is an important source of yield loss during

  17. Silicon rich nitride for silicon based laser devices

    E-Print Network [OSTI]

    Yi, Jae Hyung

    2008-01-01

    Silicon based light sources, especially laser devices, are the key components required to achieve a complete integrated silicon photonics system. However, the fundamental physical limitation of the silicon material as light ...

  18. An assessment of silicon carbide as a cladding material for light water reactors

    E-Print Network [OSTI]

    Carpenter, David Michael

    2011-01-01

    An investigation into the properties and performance of a novel silicon carbide-based fuel rod cladding under PWR conditions was conducted. The novel design is a triplex, with the inner and outermost layers consisting of ...

  19. Ge-on-Si light-emitting materials and devices for silicon photonics

    E-Print Network [OSTI]

    Sun, Xiaochen

    2009-01-01

    The rapid growing needs for high data transmission bandwidth challenge the metal interconnection technology in every area from chip-level interconnects to long distance communication. Silicon photonics is an ideal platform ...

  20. Supplemental Material Generalized Streak Lines Advected Tangent Curves

    E-Print Network [OSTI]

    of advected tangent curves. It turns out that generalized streak lines [WTS+ 07] can be described using. Generalized Streak Lines w = v, ¯f = FFF Wiebel et al. [WTS+ 07] introduced a generalization of streak lines. In Data Visualization 2003. Proc. VisSym 03, pages 141­148, 2003. [WTS+ 07] Alexander Wiebel, Xavier

  1. Purified silicon production system

    DOE Patents [OSTI]

    Wang, Tihu; Ciszek, Theodore F.

    2004-03-30

    Method and apparatus for producing purified bulk silicon from highly impure metallurgical-grade silicon source material at atmospheric pressure. Method involves: (1) initially reacting iodine and metallurgical-grade silicon to create silicon tetraiodide and impurity iodide byproducts in a cold-wall reactor chamber; (2) isolating silicon tetraiodide from the impurity iodide byproducts and purifying it by distillation in a distillation chamber; and (3) transferring the purified silicon tetraiodide back to the cold-wall reactor chamber, reacting it with additional iodine and metallurgical-grade silicon to produce silicon diiodide and depositing the silicon diiodide onto a substrate within the cold-wall reactor chamber. The two chambers are at atmospheric pressure and the system is open to allow the introduction of additional source material and to remove and replace finished substrates.

  2. 18th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Workshop Proceedings, 3-6 August 2008, Vail, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2008-09-01

    The National Center for Photovoltaics sponsored the 18th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 3-6, 2008. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The theme of this year's meeting was 'New Directions for Rapidly Growing Silicon Technologies.'

  3. Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

    E-Print Network [OSTI]

    Kim, Yong Jung

    -i-n solar cells Chang Hyun Lee and Koeng Su Lim Department of Electrical Engineering, Korea Advanced this film, amorphous silicon (a-Si solar cells with a novel p-a-DLC:H/p-a-SiC double p-layer structure were as window materials for amorphous silicon (a-Si based solar cells.1­4 In using such films as a p layer

  4. High-resolution solid-state NMR study of the occurrence and thermal transformations of silicon-containing species in biomass materials

    SciTech Connect (OSTI)

    Freitas, J.C.C.; Emmerich, F.G.; Bonagamba, T.J.

    2000-03-01

    The occurrence of silicon in two kinds of biomass (rice hulls and endocarp of babassu coconut) and the thermal transformations taking place in these materials under heat treatments are studied here. The authors report also the production, characterization, and study of carbonaceous materials with high SiC content through the carbothermal reduction of silica, using these natural precursors. X-ray diffraction, scanning electron microscopy, and {sup 13}C and {sup 29}Si room temperature high-resolution solid-state NMR measurements are used in the characterization and study of the materials as well as the process of SiC formation. Important conclusions about the nature of silicon in these types of biomass and the effects of heat treatments on the structure of silicon-containing species are derived from the results presented. It is shown that silicon in these materials occurs in two distinct forms: amorphous hydrated silica and organically bound silicon species. The influence of spin-lattice relaxation dynamics on the NMR spectra is discussed, evidencing the role played by the paramagnetic defects produced in the materials through pyrolysis.

  5. 15th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Extended Abstracts and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2005-11-01

    The National Center for Photovoltaics sponsored the 15th Workshop on Crystalline Silicon Solar Cells & Modules: Materials and Processes, held in Vail, CO, August 7-10, 2005. This meeting provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The workshop addressed the fundamental properties of PV silicon, new solar cell designs, and advanced solar cell processing techniques. A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell designs, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The theme of this year's meeting was 'Providing the Scientific Basis for Industrial Success.' Specific sessions during the workshop included: Advances in crystal growth and material issues; Impurities and defects in Si; Advanced processing; High-efficiency Si solar cells; Thin Si solar cells; and Cell design for efficiency and reliability module operation. The topic for the Rump Session was ''Si Feedstock: The Show Stopper'' and featured a panel discussion by representatives from various PV companies.

  6. Amorphous Silicon-Carbon Nanostructure Photovoltaic Devices

    E-Print Network [OSTI]

    Schriver, Maria Christine

    2012-01-01

    and Photovoltaic Performance . . . . . . . . . . . . . . .Amorphous Silicon as a Photovoltaic Material 2.1.2ii Photovoltaic Model . . . . . . . . . . .

  7. The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials

    SciTech Connect (OSTI)

    Chen, Jian Huang, Zhengren; Chen, Zhongming; Yuan, Ming; Liu, Yan; Zhu, Yunzhou

    2014-03-01

    The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The results show that C can restrain the growth of SiC grains and densify SiC ceramics with the increase of the C content, but residual C introduces a new phase-C to SiC ceramics. The hardness of C is less than that of SiC, so it's difficult to be polished as optical materials. The existence of C phase doesn't lead to the increase of surface roughness on SiC optical materials, but it leads to the decrease of the reflectance of SiC as the optical materials because the optical absorption of C in visible light is stronger than that of SiC. It indicates that C content is very important to the surface properties of SiC, which will affect the coating of chemical vapor deposition SiC or Si on the surface of SiC ceramics because of the different physical and chemical properties between C and SiC. - Highlights: • The microstructure and the distribution of carbon were investigated. • A new phase in the optical materials is introduced. • It is difficult to be polished as the optical materials because of different phases. • Carbon leads to the decrease of reflectance because of its absorption to light wave. • The different properties may affect the coating of chemical vapor deposition on SiC.

  8. Asia Silicon Qinghai Co Ltd aka Asia Si Material | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to: navigation,SummariesAshman Technologies Jump to:Silicon

  9. 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes; Program, Extended Abstracts, and Papers

    SciTech Connect (OSTI)

    Sopori, B. L.

    2006-08-01

    The National Center for Photovoltaics sponsored the 16th Workshop on Crystalline Silicon Solar Cells and Modules: Materials and Processes held August 6-9, 2006 in Denver, Colorado. The workshop addressed the fundamental properties of PV-Si, new solar cell designs, and advanced solar cell processing techniques. It provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. The Workshop Theme was: "Getting more (Watts) for Less ($i)". A combination of oral presentations by invited speakers, poster sessions, and discussion sessions reviewed recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and cell fabrication approaches suitable for future manufacturing demands. The special sessions included: Feedstock Issues: Si Refining and Purification; Metal-impurity Engineering; Thin Film Si; and Diagnostic Techniques.

  10. Eighth workshop on crystalline silicon solar cell materials and processes: Extended abstracts and papers

    SciTech Connect (OSTI)

    1998-08-01

    The theme of this workshop is Supporting the Transition to World Class Manufacturing. This workshop provides a forum for an informal exchange of information between researchers in the photovoltaic and non-photovoltaic fields on various aspects of impurities and defects in silicon, their dynamics during device processing, and their application in defect engineering. This interaction helps establish a knowledge base that can be used for improving device fabrication processes to enhance solar-cell performance and reduce cell costs. It also provides an excellent opportunity for researchers from industry and universities to recognize mutual needs for future joint research. The workshop format features invited review presentations, panel discussions, and two poster sessions. The poster sessions create an opportunity for both university and industrial researchers to present their latest results and provide a natural forum for extended discussions and technical exchanges.

  11. Silicon materials task of the low cost solar array project (Phase III). Effect of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 1: characterization methods for impurities in silicon and impurity effects data base

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-01

    The object of Phase III of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the performance of terrestrial silicon solar cells. The study encompassed a variety of tasks including: (1) a detailed examination of thermal processing effects, such as HCl and POCl/sub 3/ gettering on impurity behavior, (2) completion of the data base and modeling for impurities in n-base silicon, (3) extension of the data base on p-type material to include elements likely to be introduced during the production, refining, or crystal growth of silicon, (4) effects on cell performance on anisotropic impurity distributions in large CZ crystals and silicon webs, and (5) a preliminary assessment of the permanence of the impurity effects. Two major topics are treated: methods to measure and evaluate impurity effects in silicon and comprehensive tabulations of data derived during the study. For example, discussions of deep level spectroscopy, detailed dark I-V measurements, recombination lifetime determination, scanned laser photo-response, and conventional solar cell I-V techniques, as well as descriptions of silicon chemical analysis are included. Considerable data are tabulated on the composition, electrical, and solar cell characteristics of impurity-doped silicon.

  12. Materials science and design for germanium monolithic light source on silicon

    E-Print Network [OSTI]

    Cai, Yan, Ph. D. Massachusetts Institute of Technology

    2014-01-01

    Germanium (Ge) is an optically active material with the advantages of Si-CMOS compatibility and monolithic integration. It has great potential to be used as the light emitter for Si photonics. Tensile strain and n-type ...

  13. Advanced Materials . 2012, 24, 25922597 High-Rate Capability Silicon Decorated Vertically AlignedCarbon

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    a leading technology for medical and electronic devices as well as electric vehicles. The increasing demand.[1] Then, as nanotechnology develops, various Si-nanostructures have emerged as an appropriate anode material. Specific charge storage capacity about 2000 mAh g-1 is available and stable after one

  14. As one of the most promising materials for high capacity electrode in next generation of lithium ion batteries, silicon has attracted great deal of attention in recent years. Advanced

    E-Print Network [OSTI]

    Doctoral Defense Mechanics of Silicon Electrodes in Lithium Ion Batteries Yonghao An Advisor: Prof. Hanqing ion batteries, silicon has attracted great deal of attention in recent years. AdvancedAs one of the most promising materials for high capacity electrode in next generation of lithium

  15. An investigation of magnesium production in silicon by neutron transmutation 

    E-Print Network [OSTI]

    Davis, Freddie Joe

    1986-01-01

    NEUTRON TRANSMUTATION DOPING CHAPTER II. THEORY APPROACH IRRADIATION AND PRODUCTS NUMERICAL PREDICTIONS 10 REGISTRATION EFFICIENCY CHAPTER III. EXPERIMENT FILM SELECTION 23 PRELIMINARY TESTS OF LR-115 FILM 25 TARGET CONFIGURATION 29 INHERENT... approach. CHAPTER II THEORY APPROACH The general procedure was to irradiate silicon target materially using the NSCR as a neutron source. The desired interaction, that producing magnesium, gives rise to an alpha particle, which may escape the silicon...

  16. The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon

    E-Print Network [OSTI]

    The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon@ise.fhg.de Keywords: crystalline silicon, Czochralski, boron-oxygen defect, silicon interstitial Abstract. Oxygen-rich crystalline silicon materials doped with boron are plagued by the presence of a well-known carrier

  17. Assessment of the US regulations for fissile exemptions and fissile material general licenses

    SciTech Connect (OSTI)

    Parks, C.V.; Hopper, C.M.; Lichtenwalter, J.J. [Oak Ridge National Lab., TN (United States); Easton, E.P.; Brochman, P.G. [NRC, Washington, DC (United States)

    1997-05-01

    The paragraphs for general licenses for fissile material and exemptions (often termed exceptions in the international community) for fissile material have long been a part of the US Code of Federal Regulations (CFR) 10 CFR Part 71, Packaging and Transportation of Radioactive Material. More recently, the Nuclear Regulatory Commission (NRC) issued a final rule on Part 71 via emergency rule-making procedures in order to address an identified deficiency related to one of the fissile exemptions. To address the specified deficiency in a general fashion, the emergency rule adopted the approach of the 1996 Edition of the IAEA: Regulations for the Safe Transport of Radioactive Material (IAEA 1996), which places restrictions on certain moderating materials and limits the quantity of fissile material in a consignment. The public comments received by the NRC indicated general agreement with the need for restrictions on certain moderators (beryllium, deuterium, and graphite). The comments indicated concern relative to both the degree of restriction imposed (not more than 0.1% of fissile material mass) and the need to limit the fissile material mass of the consignment, particularly in light of the subsequent NRC staff position that the true intent was to provide control for limiting the fissile mass of the conveyance. The purpose of the review is to identify potential deficiencies that might be adverse to maintaining adequate subcriticality under normal conditions of transport and hypothetical accident conditions. In addition, ORNL has been asked to identify changes that would address any identified safety issues, enable inherently safe packages to continue to be unencumbered in transport, and seek to minimize the impact on current safe practices.

  18. Pore pressure evolution in deforming granular material: A general formulation and the infinitely stiff approximation

    E-Print Network [OSTI]

    Einat, Aharonov

    Pore pressure evolution in deforming granular material: A general formulation and the infinitely of the granular network leads to pore fluid pressure (PP) changes. If the PP rises enough, the fluidfilled the two possible modes of pore fluid pressurization: (1) via rapid fluid flow when fluid drainage is good

  19. Silicone metalization

    DOE Patents [OSTI]

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  20. Six Thousand Electrochemical Cycles of Double-Walled Silicon Nanotube Anodes for Lithium Ion Batteries

    SciTech Connect (OSTI)

    Wu, H

    2011-08-18

    Despite remarkable progress, lithium ion batteries still need higher energy density and better cycle life for consumer electronics, electric drive vehicles and large-scale renewable energy storage applications. Silicon has recently been explored as a promising anode material for high energy batteries; however, attaining long cycle life remains a significant challenge due to materials pulverization during cycling and an unstable solid-electrolyte interphase. Here, we report double-walled silicon nanotube electrodes that can cycle over 6000 times while retaining more than 85% of the initial capacity. This excellent performance is due to the unique double-walled structure in which the outer silicon oxide wall confines the inner silicon wall to expand only inward during lithiation, resulting in a stable solid-electrolyte interphase. This structural concept is general and could be extended to other battery materials that undergo large volume changes.

  1. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, John W. (Albuquerque, NM)

    1994-01-01

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

  2. Electrochemical thinning of silicon

    DOE Patents [OSTI]

    Medernach, J.W.

    1994-01-11

    Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR). 14 figures.

  3. High specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1996-01-01

    A process for preparation of silicon-32 is provided and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  4. Materials Science and Engineering B 134 (2006) 282286 Control of metal impurities in "dirty" multicrystalline silicon for solar cells

    E-Print Network [OSTI]

    2006-01-01

    of photovoltaics (PV) in the energy market. The fluctuations of availability and feedstock cost determine.R. Webera,b a Department of Materials Science, University of California, Berkeley, CA 94720, USA b Lawrence processing of solar cells with satisfactory energy conversion efficiency based on inexpensive feedstock

  5. Process for strengthening silicon based ceramics

    DOE Patents [OSTI]

    Kim, Hyoun-Ee; Moorhead, A. J.

    1993-04-06

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  6. Process for strengthening silicon based ceramics

    DOE Patents [OSTI]

    Kim, Hyoun-Ee (Oak Ridge, TN); Moorhead, A. J. (Knoxville, TN)

    1993-01-01

    A process for strengthening silicon based ceramic monolithic materials and omposite materials that contain silicon based ceramic reinforcing phases that requires that the ceramic be exposed to a wet hydrogen atmosphere at about 1400.degree. C. The process results in a dense, tightly adherent silicon containing oxide layer that heals, blunts , or otherwise negates the detrimental effect of strength limiting flaws on the surface of the ceramic body.

  7. Silicon materials task of the low cost solar array project (Phase III). Effects of impurities and processing on silicon solar cells. Phase III summary and seventeenth quarterly report, Volume 2: analysis of impurity behavior

    SciTech Connect (OSTI)

    Hopkins, R.H.; Davis, J.R.; Rohatgi, A.; Campbell, R.B.; Blais, P.D.; Rai-Choudhury, P.; Stapleton, R.E.; Mollenkopf, H.C.; McCormick, J.R.

    1980-01-23

    The object of this phase of the program has been to investigate the effects of various processes, metal contaminants and contaminant-process interactions on the properties of silicon and on the performance of terrestrial silicon solar cells. The study encompassed topics including thermochemical (gettering) treatments, base doping concentration, base doping type (n vs. p), grain boundary-impurity interaction, non-uniformity of impurity distribution, long term effects of impurities, as well as synergic and complexing phenomena. The program approach consists in: (1) the growth of doubly and multiply-doped silicon single crystals containing a baseline boron or phosphorus dopant and specific impurities which produce deep levels in the forbidden band gap; (2) assessment of these crystals by chemical, microstructural, electrical and solar cell tests; (3) correlation of the impurity type and concentration with crystal quality and device performance; and (4) delineation of the role of impurities and processing on subsequent silicon solar cell performance. The overall results reported are based on the assessment of nearly 200 silicon ingots. (WHK)

  8. Floating Silicon Method

    SciTech Connect (OSTI)

    Kellerman, Peter

    2013-12-21

    The Floating Silicon Method (FSM) project at Applied Materials (formerly Varian Semiconductor Equipment Associates), has been funded, in part, by the DOE under a “Photovoltaic Supply Chain and Cross Cutting Technologies” grant (number DE-EE0000595) for the past four years. The original intent of the project was to develop the FSM process from concept to a commercially viable tool. This new manufacturing equipment would support the photovoltaic industry in following ways: eliminate kerf losses and the consumable costs associated with wafer sawing, allow optimal photovoltaic efficiency by producing high-quality silicon sheets, reduce the cost of assembling photovoltaic modules by creating large-area silicon cells which are free of micro-cracks, and would be a drop-in replacement in existing high efficiency cell production process thereby allowing rapid fan-out into the industry.

  9. Preliminary materials assessment for the Satellite Power System (SPS)

    SciTech Connect (OSTI)

    Teeter, R.R.; Jamieson, W.M.

    1980-01-01

    Presently, there are two SPS reference design concepts (one using silicon solar cells; the other using gallium arsenide solar cells). A materials assessment of both systems was performed based on the materials lists set forth in the DOE/NASA SPS Reference System Report: Concept Development and Evaluation Program. This listing identified 22 materials (plus miscellaneous and organics) used in the SPS. Tracing the production processes for these 22 materials, a total demand for over 20 different bulk materials (copper, silicon, sulfuric acid, etc.) and nealy 30 raw materials (copper ore, sand, sulfur ore, etc.) was revealed. Assessment of these SPS material requirements produced a number of potential material supply problems. The more serious problems are those associated with the solar cell materials (gallium, gallium arsenide, sapphire, and solar grade silicon), and the graphite fiber required for the satellite structure and space construction facilities. In general, the gallium arsenide SPS option exhibits more serious problems than the silicon option, possibly because gallium arsenide technology is not as well developed as that for silicon. Results are presented and discussed in detail. (WHK)

  10. Optical properties of Eu{sup 2+}/Eu{sup 3+} mixed valence, silicon nitride based materials

    SciTech Connect (OSTI)

    Kate, Otmar M. ten, E-mail: o.m.tenkate@tudelft.nl [Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven (Netherlands); Fundamental Aspects of Materials and Energy, Delft University of Technology, Mekelweg 15, 2629 JB Delft (Netherlands); Vranken, Thomas [Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven (Netherlands); Kolk, Erik van der [Fundamental Aspects of Materials and Energy, Delft University of Technology, Mekelweg 15, 2629 JB Delft (Netherlands); Jansen, Antonius P.J.; Hintzen, Hubertus T. [Chemical Engineering and Chemistry, Eindhoven University of Technology, Den Dolech 2, 5600 MB Eindhoven (Netherlands)

    2014-05-01

    Eu{sub 2}SiN{sub 3}, a mixed valence europium nitridosilicate, has been prepared via solid-state reaction synthesis and its oxidation behavior and optical properties have been determined. Furthermore, the stability of several isostructural compounds of the type M{sup 2+}L{sup 3+}SiN{sub 3} has been predicted by using the density functional theory calculations, and verified by the actual synthesis of CaLaSiN{sub 3}, CaEuSiN{sub 3} and EuLaSiN{sub 3}. The band gap of CaLaSiN{sub 3} was found around 3.2 eV giving the material its yellow color. Eu{sub 2}SiN{sub 3} on the other hand is black due to a combination of the 4f–5d absorption band of Eu{sup 2+} and the charge transfer band of Eu{sup 3+}. Thermogravimetric analysis and Raman spectroscopic study of Eu{sub 2}SiN{sub 3} revealed that oxidation of this compound in dry air takes place via a nitrogen retention complex. - Graphical abstract: Energy level scheme of Eu{sub 2}SiN{sub 3} showing the occupied N{sup 3?} 2p band (blue rectangle), unoccupied Eu{sup 2+} 5d band (white rectangle), occupied Eu{sup 2+} 4f ground states (filled red circles) and unoccupied Eu{sup 2+} ground states (open red circles). - Highlights: • Density functional theory calculations on the stability of M{sup 2+}L{sup 3+}SiN{sub 3} compounds. • Solid-state reaction synthesis of Eu{sub 2}SiN{sub 3}, CaLaSiN{sub 3}, EuLaSiN{sub 3} and CaEuSiN{sub 3}. • Determination of the Eu{sup 2+} 4f–5d and Eu{sup 3+} CT transitions in M{sup 2+}L{sup 3+}SiN{sub 3} compounds. • Oxidation of Eu{sub 2}SiN{sub 3} in dry air takes place via a nitrogen retention complex.

  11. Mechanical Dissipation in Silicon Flexures

    E-Print Network [OSTI]

    S. Reid; G. Cagnoli; D. R. M. Crooks; J. Hough; P. Murray; S. Rowan; M. M. Fejer; R. Route; S. Zappe

    2005-10-28

    The thermo-mechanical properties of silicon make it of significant interest as a possible material for mirror substrates and suspension elements for future long-baseline gravitational wave detectors. The mechanical dissipation in 92um thick single-crystal silicon cantilevers has been observed over the temperature range 85 K to 300 K, with dissipation approaching levels down to phi = 4.4E-7.

  12. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-05-21

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  13. Modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  14. 10th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers from the Workshop, Copper Mountain Resort; August 14-16, 2000

    SciTech Connect (OSTI)

    Sopori, B.L.; Gee, J.; Kalejs, J.; Saitoh, R.; Stavola, M.; Swanson, D.; Tan, T.; Weber, E.; Werner, J.

    2000-08-11

    The 10th Workshop provided a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions included the various aspects of impurities and defects in silicon-their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions also reviewed thin-film crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing requirements to meet the ambitious expansion goals described in the recently released US PV Industry Roadmap. The Workshop also provided an excellent opportunity for researchers in private industry and at universities to recognize a mutual need for future collaborative research. The three-day workshop consisted of presentations by invited speakers, followed by discussion sessions. In addition, there was two poster sessions presenting the latest research and development results. The subjects discussed included: solar cell processing, light-induced degradation, gettering and passivation, crystalline silicon growth, thin-film silicon solar cells, and impurities and defects. Two special sessions featured at this workshop: advanced metallization and interconnections, and characterization methods.

  15. DETECTOR MATERIALS: GERMANIUM AND SILICON

    E-Print Network [OSTI]

    Haller, E.E.

    2010-01-01

    most important for the radiation detection will be reviewedones for nuclear radiation detection are what we call the

  16. 4.0 RISK FROM URANIUM MINING WASTE IN BUILDING In general, building materials contain low levels of radioactivity. For example, the range of

    E-Print Network [OSTI]

    4.0 RISK FROM URANIUM MINING WASTE IN BUILDING MATERIALS In general, building materials contain low levels of radioactivity. For example, the range of natural uranium concentrations may average as low as about 0.5 ppm (0.34 pCi/g or 13 Bq/kg) total uranium activity in sandstone building materials to as high

  17. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, J.L.

    1996-07-23

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/{micro}c-Si) solar cells are disclosed which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell. 4 figs.

  18. Three dimensional amorphous silicon/microcrystalline silicon solar cells

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA)

    1996-01-01

    Three dimensional deep contact amorphous silicon/microcrystalline silicon (a-Si/.mu.c-Si) solar cells which use deep (high aspect ratio) p and n contacts to create high electric fields within the carrier collection volume material of the cell. The deep contacts are fabricated using repetitive pulsed laser doping so as to create the high aspect p and n contacts. By the provision of the deep contacts which penetrate the electric field deep into the material where the high strength of the field can collect many of the carriers, thereby resulting in a high efficiency solar cell.

  19. A study of the influence of boron diffusion sources on the material and electrical characteristics of silicon p-n junctions 

    E-Print Network [OSTI]

    Huang, Kuan-Chun Andrew

    1976-01-01

    is . he sheet resistance x. is the junc. ion dep. h. This average ccnductivity is then applied to Irvin's cu ve cr a p-+yoe Gaussian layer in silicon to obtain the surface concentration. Impurity Profile Incremental etching is a technique... for removing thin sections of silicon by a timed etch in a PNO -HF mixture (23). It is a relatively rough but quick technique to determine the impurity profile of a deep junction. A volume mixture of 2$ HF, 98fo HNO is experimentally determined to be best...

  20. A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

    E-Print Network [OSTI]

    Moon, H.-S.

    Silicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for ...

  1. Production of high specific activity silicon-32

    DOE Patents [OSTI]

    Phillips, Dennis R. (Los Alamos, NM); Brzezinski, Mark A. (Santa Barbara, CA)

    1994-01-01

    A process for preparation of silicon-32 is provide and includes contacting an irradiated potassium chloride target, including spallation products from a prior irradiation, with sufficient water, hydrochloric acid or potassium hydroxide to form a solution, filtering the solution, adjusting pH of the solution to from about 5.5 to about 7.5, admixing sufficient molybdate-reagent to the solution to adjust the pH of the solution to about 1.5 and to form a silicon-molybdate complex, contacting the solution including the silicon-molybdate complex with a dextran-based material, washing the dextran-based material to remove residual contaminants such as sodium-22, separating the silicon-molybdate complex from the dextran-based material as another solution, adding sufficient hydrochloric acid and hydrogen peroxide to the solution to prevent reformation of the silicon-molybdate complex and to yield an oxidization state of the molybdate adapted for subsequent separation by an anion exchange material, contacting the solution with an anion exchange material whereby the molybdate is retained by the anion exchange material and the silicon remains in solution, and optionally adding sufficient alkali metal hydroxide to adjust the pH of the solution to about 12 to 13. Additionally, a high specific activity silicon-32 product having a high purity is provided.

  2. Mat. Res. Soc. Symp. Proc. Vol. 609 2000 Materials Research Society Preparation of Microcrystalline Silicon Based Solar Cells at High i-layer

    E-Print Network [OSTI]

    Deng, Xunming

    the efficiencies of the multi-junction devices. The µc-Si cells do not significantly degrade (-light absorbing structures in multi-junction cell with blue-green light absorbing a-Si:H top cells would lead of Microcrystalline Silicon Based Solar Cells at High i-layer Deposition Rates Using a Gas Jet Technique S.J. Jones

  3. 11th Workshop on Crystalline Silicon Solar Cell Materials and Processes, Extended Abstracts and Papers, 19-22 August 2001, Estes Park, Colorado

    SciTech Connect (OSTI)

    Sopori, B.

    2001-08-16

    The 11th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and non-photovoltaic fields. Discussions will include the various aspects of impurities and defects in silicon--their properties, the dynamics during device processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. Sessions and panel discussions will review impurities and defects in crystalline-silicon PV, advanced cell structures, new processes and process characterization techniques, and future manufacturing demands. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the throughput demands of the future. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. Topics to be discussed are: Si Mechanical properties and Wafer Handling, Advanced Topics in PV Fundamentals, Gettering and Passivation, Impurities and Defects, Advanced Emitters, Crystalline Silicon Growth, and Solar Cell Processing. The workshop will also include presentations by NREL subcontractors who will review the highlights of their research during the current subcontract period. In addition, there will be two poster sessions presenting the latest research and development results. Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV.

  4. Light Emission in Silicon from Carbon Nanotubes

    E-Print Network [OSTI]

    Gaufrès, Etienne; Noury, Adrien; Roux, Xavier Le; Rasigade, Gilles; Beck, Alexandre; Vivien, Laurent

    2015-01-01

    The use of optics in microelectronic circuits to overcome the limitation of metallic interconnects is more and more considered as a viable solution. Among future silicon compatible materials, carbon nanotubes are promising candidates thanks to their ability to emit, modulate and detect light in the wavelength range of silicon transparency. We report the first integration of carbon nanotubes with silicon waveguides, successfully coupling their emission and absorption properties. A complete study of this coupling between carbon nanotubes and silicon waveguides was carried out, which led to the demonstration of the temperature-independent emission from carbon nanotubes in silicon at a wavelength of 1.3 {\\mu}m. This represents the first milestone in the development of photonics based on carbon nanotubes on silicon.

  5. Deposition method for producing silicon carbide high-temperature semiconductors

    DOE Patents [OSTI]

    Hsu, George C. (La Crescenta, CA); Rohatgi, Naresh K. (W. Corine, CA)

    1987-01-01

    An improved deposition method for producing silicon carbide high-temperature semiconductor material comprising placing a semiconductor substrate composed of silicon carbide in a fluidized bed silicon carbide deposition reactor, fluidizing the bed particles by hydrogen gas in a mildly bubbling mode through a gas distributor and heating the substrate at temperatures around 1200.degree.-1500.degree. C. thereby depositing a layer of silicon carbide on the semiconductor substrate.

  6. INTERNATIONAL CONFERENCE ON EXOTIC FORMS OF SILICON

    E-Print Network [OSTI]

    ` e INTERNATIONAL CONFERENCE ON EXOTIC FORMS OF SILICON Renewable Energy Materials Research Science Laboratory TOYOTA Central R&D Labs., Inc. Japan George S. Nolas Department of Physics University of South

  7. Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion toMSDS onBudgetMaterialMaterials Materials Access to

  8. CHARGE STABILITY IN LPCVD SILICON NITRIDE FOR SURFACE PASSIVATION OF SILICON SOLAR CELLS

    E-Print Network [OSTI]

    to be mainly concentrated at the oxide/nitride interface. The thermal stability of the charge is shown silicon nitride layers can lead to a significant improvement in surface recombination at lightly doped of a tunnel oxide, a silicon nitride layer and optionally, a barrier oxide or other dielectric material. As

  9. Optical Absorption Characteristics of Silicon Nanowires for Photovoltaic Applications

    E-Print Network [OSTI]

    Parkash, Vidur

    2010-01-01

    Solar cells have generated a lot of interest as a potential source of clean renewable energy for the future. However a big bottleneck in wide scale deployment of these energy sources remain the low efficiency of these conversion devices. Recently the use of nanostructures and the strategy of quantum confinement have been as a general approach towards better charge carrier generation and capture. In this article we have presented calculations on the optical characteristics of nanowires made out of Silicon. Our calculations show these nanowires form excellent optoelectronic materials and may yield efficient photovoltaic devices.

  10. Birefringence Measurements on Crystalline Silicon

    E-Print Network [OSTI]

    Krüger, Christoph; Khalaidovski, Alexander; Steinlechner, Jessica; Nawrodt, Ronny; Schnabel, Roman; Lück, Harald

    2015-01-01

    Crystalline silicon has been proposed as a new test mass material in third generation gravitational wave detectors such as the Einstein Telescope (ET). Birefringence can reduce the interferometric contrast and can produce dynamical disturbances in interferometers. In this work we use the method of polarisation-dependent resonance frequency analysis of Fabry-Perot-cavities containing silicon as a birefringent medium. Our measurements show a birefringence of silicon along the (111) axis of the order of $\\Delta\\, n \\approx 10^{-7}$ at a laser wavelength of 1550nm and room temperature. A model is presented that explains the results of different settings of our measurements as a superposition of elastic strains caused by external stresses in the sample and plastic strains possibly generated during the production process. An application of our theory on the proposed ET test mass geometry suggests no critical effect on birefringence due to elastic strains.

  11. Cordierite silicon nitride filters

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B. ); Duiven, R.; Berger, M. ); Cleveland, J.; Ferri, J. )

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  12. 12th Workshop on Crystalline Silicon Solar Cell Materials and Processes: Extended Abstracts and Papers, August 11-14, 2002, Breckenridge, Colorado

    SciTech Connect (OSTI)

    Sopori, B. L.

    2002-08-01

    The 12th Workshop will provide a forum for an informal exchange of technical and scientific information between international researchers in the photovoltaic and relevant non-photovoltaic fields. Discussions will include various aspects of impurities and defects in silicon-their properties, the dynamics during processing, and their application for developing low-cost processes for manufacturing high-efficiency silicon solar cells. The workshop will emphasize some of the promising new technologies in Si solar cell fabrication that can lower PV energy costs and meet the production demands of the future. It will also provide an excellent opportunity for researchers, in private industry and at universities, to prioritize mutual needs for future collaborative research. Sessions and panel discussions will review recent advances in crystal growth, new cell structures, new processes and process characterization techniques, and manufacturing approaches suitable for future manufacturing demands . Some presentations will address recent technologies in the microelectronics field that may have a direct bearing on PV. The three-day workshop will consist of presentations by invited speakers, followed by discussion sessions. In addition, there will be two poster sessions presenting the latest research and development results.

  13. Single crystalline mesoporous silicon nanowires

    E-Print Network [OSTI]

    Hochbaum, A.I.

    2010-01-01

    effects in highly porous crystalline silicon, Nature 1991,J. , Fabrication of single-crystalline silicon nanowires bySingle crystalline mesoporous silicon nanowires Allon I.

  14. Buried oxide layer in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

    2001-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  15. Materials

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCentermillion toMSDS onBudgetMaterial

  16. Metal electrode for amorphous silicon solar cells

    DOE Patents [OSTI]

    Williams, Richard (Princeton, NJ)

    1983-01-01

    An amorphous silicon solar cell having an N-type region wherein the contact to the N-type region is composed of a material having a work function of about 3.7 electron volts or less. Suitable materials include strontium, barium and magnesium and rare earth metals such as gadolinium and yttrium.

  17. Heterogeneous lithium niobate photonics on silicon substrates

    E-Print Network [OSTI]

    Fathpour, Sasan

    /waveguide on silicon," J. Lightwave Technol. 25(7), 1826­1831 (2007). 4. M. J. Weber, Handbook of Optical Materials and selective oxidation of refractory metals. The heterogeneous photonic platform is employed to demonstrate as a new electro-optic material," Nature 441(7090), 199­202 (2006). 7. K. K. Tsia, S. Fathpour, and B

  18. Advanced silicon photonic modulators

    E-Print Network [OSTI]

    Sorace, Cheryl M

    2010-01-01

    Various electrical and optical schemes used in Mach-Zehnder (MZ) silicon plasma dispersion effect modulators are explored. A rib waveguide reverse biased silicon diode modulator is designed, tested and found to operate at ...

  19. Process for producing silicon

    DOE Patents [OSTI]

    Olson, Jerry M. (Lakewood, CO); Carleton, Karen L. (Boulder, CO)

    1984-01-01

    A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  20. Process for producing silicon

    DOE Patents [OSTI]

    Olson, J.M.; Carleton, K.L.

    1982-06-10

    A process of producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.

  1. Metallic coatings on silicon substrates, and methods of forming metallic coatings on silicon substrates

    DOE Patents [OSTI]

    Branagan, Daniel J. (Idaho Falls, ID); Hyde, Timothy A. (Idaho Falls, ID); Fincke, James R. (Los Alamos, NM)

    2008-03-11

    The invention includes methods of forming a metallic coating on a substrate which contains silicon. A metallic glass layer is formed over a silicon surface of the substrate. The invention includes methods of protecting a silicon substrate. The substrate is provided within a deposition chamber along with a deposition target. Material from the deposition target is deposited over at least a portion of the silicon substrate to form a protective layer or structure which contains metallic glass. The metallic glass comprises iron and one or more of B, Si, P and C. The invention includes structures which have a substrate containing silicon and a metallic layer over the substrate. The metallic layer contains less than or equal to about 2 weight % carbon and has a hardness of at least 9.2 GPa. The metallic layer can have an amorphous microstructure or can be devitrified to have a nanocrystalline microstructure.

  2. Electrodeposition of molten silicon

    DOE Patents [OSTI]

    De Mattei, Robert C. (Sunnyvale, CA); Elwell, Dennis (Palo Alto, CA); Feigelson, Robert S. (Saratoga, CA)

    1981-01-01

    Silicon dioxide is dissolved in a molten electrolytic bath, preferably comprising barium oxide and barium fluoride. A direct current is passed between an anode and a cathode in the bath to reduce the dissolved silicon dioxide to non-alloyed silicon in molten form, which is removed from the bath.

  3. Lithium ion batteries based on nanoporous silicon

    DOE Patents [OSTI]

    Tolbert, Sarah H.; Nemanick, Eric J.; Kang, Chris Byung-Hwa

    2015-09-22

    A lithium ion battery that incorporates an anode formed from a Group IV semiconductor material such as porous silicon is disclosed. The battery includes a cathode, and an anode comprising porous silicon. In some embodiments, the anode is present in the form of a nanowire, a film, or a powder, the porous silicon having a pore diameters within the range between 2 nm and 100 nm and an average wall thickness of within the range between 1 nm and 100 nm. The lithium ion battery further includes, in some embodiments, a non-aqueous lithium containing electrolyte. Lithium ion batteries incorporating a porous silicon anode demonstrate have high, stable lithium alloying capacity over many cycles.

  4. Glass-silicon column

    DOE Patents [OSTI]

    Yu, Conrad M.

    2003-12-30

    A glass-silicon column that can operate in temperature variations between room temperature and about 450.degree. C. The glass-silicon column includes large area glass, such as a thin Corning 7740 boron-silicate glass bonded to a silicon wafer, with an electrode embedded in or mounted on glass of the column, and with a self alignment silicon post/glass hole structure. The glass/silicon components are bonded, for example be anodic bonding. In one embodiment, the column includes two outer layers of silicon each bonded to an inner layer of glass, with an electrode imbedded between the layers of glass, and with at least one self alignment hole and post arrangement. The electrode functions as a column heater, and one glass/silicon component is provided with a number of flow channels adjacent the bonded surfaces.

  5. Epitaxial graphene on silicon carbide: Introduction to structured graphene

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Epitaxial graphene on silicon carbide: Introduction to structured graphene Ming Ruan 1 , Yike Hu 1, France Abstract We present an introduction to the rapidly growing field of epitaxial graphene on silicon present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now

  6. Intermediate Band Properties of Femtosecond-Laser Hyperdoped Silicon

    E-Print Network [OSTI]

    Mazur, Eric

    -dependent electronic transport measurements. The measurement data indicate that these samples form a localized IB solubility. Hy- perdoped silicon is promising for improving efficiencies of solar cells: the material exhibits broad-band light absorption to wavelengths deep below the corresponding bandgap energy of silicon

  7. Bench-Scale Silicone Process for Low-Cost CO{sub 2} Capture. Manufacturing Plan for Aminosilicone-based CO{sub 2} Absorption Material

    SciTech Connect (OSTI)

    Vogt, Kirkland

    2013-02-01

    A commercially cost effective manufacturing plan was developed for GAP-1m, the aminosilicone-based part of the CO{sub 2} capture solvent described in DE-FE0007502, and the small-scale synthesis of GAP-1m was confirmed. The plan utilizes a current intermediate at SiVance LLC to supply the 2013-2015 needs for GE Global Research. Material from this process was supplied to GE Global Research for evaluation and creation of specifications. GE Global Research has since ordered larger quantities (60 liters) for the larger scale evaluations that start in first quarter, 2013. For GE’s much larger future commercial needs, an improved, more economical pathway to make the product was developed after significant laboratory and literature research. Suppliers were identified for all raw materials.

  8. Incompatible Chemicals The following list is to be used only as a general guideline. Please refer to your Material Safety

    E-Print Network [OSTI]

    Slatton, Clint

    : Acetic acid Chromic acid, nitric acid, hydroxyl compounds, ethylene glycol, perchloric acid, peroxides, sulfur, finely divided organic or combustible materials Chromic acid and chromium trioxide Acetic acid, ammonia Nitrates Acids Nitric acid (concentrated) Acetic acid, aniline, chromic acid, hydrocyanic acid

  9. High-cycle fatigue and durability of polycrystalline silicon thin lms in ambient air

    E-Print Network [OSTI]

    Ritchie, Robert

    High-cycle fatigue and durability of polycrystalline silicon thin ®lms in ambient air C. First, silicon-based ®lms are still the dominant structural material for micromachines. Second of MEMS components are critical in this maturing ®eld. The silicon-based ®lms commonly used in micromecha

  10. Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer

    DOE Patents [OSTI]

    Cardinale, Gregory F. (Oakland, CA)

    2002-01-01

    A method for fabricating masks for extreme ultraviolet lithography (EUVL) using Ultra-Low Expansion (ULE) substrates and crystalline silicon. ULE substrates are required for the necessary thermal management in EUVL mask blanks, and defect detection and classification have been obtained using crystalline silicon substrate materials. Thus, this method provides the advantages for both the ULE substrate and the crystalline silicon in an Extreme Ultra-Violet (EUV) mask blank. The method is carried out by bonding a crystalline silicon wafer or member to a ULE wafer or substrate and thinning the silicon to produce a 5-10 .mu.m thick crystalline silicon layer on the surface of the ULE substrate. The thinning of the crystalline silicon may be carried out, for example, by chemical mechanical polishing and if necessary or desired, oxidizing the silicon followed by etching to the desired thickness of the silicon.

  11. Cross-sectional transmission electron microscopy study of femtosecond laser-irradiated selenium-doped 'black' silicon

    E-Print Network [OSTI]

    Reading, Arthur H. (Arthur Henry)

    2009-01-01

    'Black silicon' refers to silicon that has been treated in a laser-ablation process to incorporate large amounts of chalcogen dopants. The material has been found to have greatly increased absorbance of visible and infared ...

  12. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1994-01-01

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400.degree. C. to 1000.degree. C. where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100.degree. C. to 1600.degree. C. to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  13. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, Jacques I. (Princeton, NJ); Wu, Chung P. (Trenton, NJ)

    1982-01-01

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gasing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen.

  14. Method for silicon carbide production by reacting silica with hydrocarbon gas

    DOE Patents [OSTI]

    Glatzmaier, G.C.

    1994-06-28

    A method is described for producing silicon carbide particles using a silicon source material and a hydrocarbon. The method is efficient and is characterized by high yield. Finely divided silicon source material is contacted with hydrocarbon at a temperature of 400 C to 1000 C where the hydrocarbon pyrolyzes and coats the particles with carbon. The particles are then heated to 1100 C to 1600 C to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process. 5 figures.

  15. Silicon micro-mold

    DOE Patents [OSTI]

    Morales, Alfredo M. (Livermore, CA)

    2006-10-24

    The present invention describes a method for rapidly fabricating a robust 3-dimensional silicon-mold for use in preparing complex metal micro-components. The process begins by depositing a conductive metal layer onto one surface of a silicon wafer. A thin photoresist and a standard lithographic mask are then used to transfer a trace image pattern onto the opposite surface of the wafer by exposing and developing the resist. The exposed portion of the silicon substrate is anisotropically etched through the wafer thickness down to conductive metal layer to provide an etched pattern consisting of a series of rectilinear channels and recesses in the silicon which serve as the silicon micro-mold. Microcomponents are prepared with this mold by first filling the mold channels and recesses with a metal deposit, typically by electroplating, and then removing the silicon micro-mold by chemical etching.

  16. Synthesis and study of novel silicon-based unsaturated polymers

    SciTech Connect (OSTI)

    Lin, J.

    1995-06-19

    Novel unsaturated polymers have been synthesized and studied as precursors to silicon carbide and third order nonlinear optical materials. X ray structures were obtained. Kinetic and mechanistic studies of the unique thermal isomerization of dimethylenedisilacyclobutane to a carbene were conducted.

  17. Reactor physics assessment of thick silicon carbide clad PWR fuels

    E-Print Network [OSTI]

    Bloore, David A. (David Allan)

    2013-01-01

    High temperature tolerance, chemical stability and low neutron affinity make silicon carbide (SiC) a potential fuel cladding material that may improve the economics and safety of light water reactors (LWRs). "Thick" SiC ...

  18. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, Robert A. (Albuquerque, NM); Seager, Carleton H. (Albuquerque, NM)

    1996-01-01

    An electrostatic chuck is faced with a patterned silicon plate 11, created y micromachining a silicon wafer, which is attached to a metallic base plate 13. Direct electrical contact between the chuck face 15 (patterned silicon plate's surface) and the silicon wafer 17 it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands 19 that protrude less than 5 micrometers from the otherwise flat surface of the chuck face 15. The islands 19 may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face 15 and wafer 17 contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands 19 are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face 15, typically 0.5 to 5 percent. The pattern of the islands 19, together with at least one hole 12 bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas.

  19. Micromachined silicon electrostatic chuck

    DOE Patents [OSTI]

    Anderson, R.A.; Seager, C.H.

    1996-12-10

    An electrostatic chuck is faced with a patterned silicon plate, created by micromachining a silicon wafer, which is attached to a metallic base plate. Direct electrical contact between the chuck face (patterned silicon plate`s surface) and the silicon wafer it is intended to hold is prevented by a pattern of flat-topped silicon dioxide islands that protrude less than 5 micrometers from the otherwise flat surface of the chuck face. The islands may be formed in any shape. Islands may be about 10 micrometers in diameter or width and spaced about 100 micrometers apart. One or more concentric rings formed around the periphery of the area between the chuck face and wafer contain a low-pressure helium thermal-contact gas used to assist heat removal during plasma etching of a silicon wafer held by the chuck. The islands are tall enough and close enough together to prevent silicon-to-silicon electrical contact in the space between the islands, and the islands occupy only a small fraction of the total area of the chuck face, typically 0.5 to 5 percent. The pattern of the islands, together with at least one hole bored through the silicon veneer into the base plate, will provide sufficient gas-flow space to allow the distribution of the helium thermal-contact gas. 6 figs.

  20. Silicene: Graphene's silicon cousin Xining Zang

    E-Print Network [OSTI]

    Budker, Dmitry

    Germanene #12;Limit of Moore's Law in Bulk Material To break the limit Single layer 2D graphene Silicene Bandstructure calculated by ab initio #12;Summary · Silicene and germanene 2D semiconductor · HoneycombSilicene: Graphene's silicon cousin Xining Zang Graduate Student ME @Berkeley 05/02/2013 #12

  1. Measuring Speedy Electrons in Silicon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser, Supercomputer Measure Speedy Electrons in Silicon Laser, Supercomputer Measure Speedy Electrons in Silicon Simulations at NERSC Help Illuminate Attosecond Laser Experiment...

  2. Optimization of transparent and reflecting electrodes for amorphous silicon solar cells. Annual technical report, April 1, 1995--March 31, 1996

    SciTech Connect (OSTI)

    Gordon, R.G.; Sato, H.; Liang, H.; Liu, X.; Thornton, J. [Harvard Univ., Cambridge, MA (United States)

    1996-08-01

    The general objective is to develop methods to deposit materials which can be used to make more efficient solar cells. The work is organized into three general tasks: Task 1. Develop improved methods for depositing and using transparent conductors of fluorine-doped zinc oxide in amorphous silicon solar cells Task 2. Deposit and evaluate titanium oxide as a reflection-enhancing diffusion barrier between amorphous silicon and an aluminum or silver back-reflector. Task 3. Deposit and evaluate electrically conductive titanium oxide as a transparent conducting layer on which more efficient and more stable superstrate cells can be deposited. About one-third of the current project resources are allocated to each of these three objectives.

  3. Preparation of silicon carbide fibers

    DOE Patents [OSTI]

    Wei, G.C.

    1983-10-12

    Silicon carbide fibers suitable for use in the fabrication of dense, high-strength, high-toughness SiC composites or as thermal insulating materials in oxidizing environments are fabricated by a new, simplified method wherein a mixture of short-length rayon fibers and colloidal silica is homogenized in a water slurry. Water is removed from the mixture by drying in air at 120/sup 0/C and the fibers are carbonized by (pyrolysis) heating the mixture to 800 to 1000/sup 0/C in argon. The mixture is subsequently reacted at 1550 to 1900/sup 0/C in argon to yield pure ..beta..-SiC fibers.

  4. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, T.F.

    1995-03-28

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

  5. Substrate for thin silicon solar cells

    DOE Patents [OSTI]

    Ciszek, Theodore F. (Evergreen, CO)

    1995-01-01

    A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

  6. Silicone-containing composition

    DOE Patents [OSTI]

    Mohamed, Mustafa

    2012-01-24

    A silicone-containing composition comprises the reaction product of a first component and an excess of an isocyanate component relative to the first component to form an isocyanated intermediary. The first component is selected from one of a polysiloxane and a silicone resin. The first component includes a carbon-bonded functional group selected from one of a hydroxyl group and an amine group. The isocyanate component is reactive with the carbon-bonded functional group of the first component. The isocyanated intermediary includes a plurality of isocyanate functional groups. The silicone-containing composition comprises the further reaction product of a second component, which is selected from the other of the polysiloxane and the silicone resin. The second component includes a plurality of carbon-bonded functional groups reactive with the isocyanate functional groups of the isocyanated intermediary for preparing the silicone-containing composition.

  7. Improved method of preparing p-i-n junctions in amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.

    1984-12-10

    A method of preparing p/sup +/-i-n/sup +/ junctions for amorphous silicon semiconductors includes depositing amorphous silicon on a thin layer of trivalent material, such as aluminum, indium, or gallium at a temperature in the range of 200/sup 0/C to 250/sup 0/C. At this temperature, the layer of trivalent material diffuses into the amorphous silicon to form a graded p/sup +/-i junction. A layer of n-type doped material is then deposited onto the intrinsic amorphous silicon layer in a conventional manner to finish forming the p/sup +/-i-n/sup +/ junction.

  8. Structure, defects, and strain in silicon-silicon oxide interfaces

    SciTech Connect (OSTI)

    Kova?evi?, Goran Pivac, Branko

    2014-01-28

    The structure of the interfaces between silicon and silicon-oxide is responsible for proper functioning of MOSFET devices while defects in the interface can deteriorate this function and lead to their failure. In this paper we modeled this interface and characterized its defects and strain. MD simulations were used for reconstructing interfaces into a thermodynamically stable configuration. In all modeled interfaces, defects were found in the form of three-coordinated silicon atom, five coordinated silicon atom, threefold-coordinated oxygen atom, or displaced oxygen atom. Three-coordinated oxygen atom can be created if dangling bonds on silicon are close enough. The structure and stability of three-coordinated silicon atoms (P{sub b} defect) depend on the charge as well as on the electric field across the interface. The negatively charged P{sub b} defect is the most stable one, but the electric field resulting from the interface reduces that stability. Interfaces with large differences in periodic constants of silicon and silicon oxide can be stabilized by buckling of silicon layer. The mechanical stress resulted from the interface between silicon and silicon oxide is greater in the silicon oxide layer. Ab initio modeling of clusters representing silicon and silicon oxide shows about three time larger susceptibility to strain in silicon oxide than in silicon if exposed to the same deformation.

  9. Method of fabrication of display pixels driven by silicon thin film transistors

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA)

    1999-01-01

    Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200.degree. C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.

  10. Superconductivity observed in platinum-silicon interface

    SciTech Connect (OSTI)

    Kuo, Pai-Chia, E-mail: paichia@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Chun-Wei [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Ku-Pin; Shiue, Jessie, E-mail: yshiue@phys.sinica.edu.tw [Research Program on Nanoscience and Nanotechnology, Academia Sinica, Taipei 11529, Taiwan (China); Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)

    2014-05-26

    We report the discovery of superconductivity with an onset temperature of ?0.6?K in a platinum-silicon interface. The interface was formed by using a unique focused ion beam sputtering micro-deposition method in which the energies of most sputtered Pt atoms are ?2.5?eV. Structural and elemental analysis by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy reveal a???7?nm interface layer with abundant Pt, which is the layer likely responsible for the superconducting transport behavior. Similar transport behavior was also observed in a gold-silicon interface prepared by the same technique, indicating the possible generality of this phenomenon.

  11. Efficiency of silicon solar cells containing chromium

    DOE Patents [OSTI]

    Frosch, Robert A. Administrator of the National Aeronautics and Space (New Port Beach, CA); Salama, Amal M. (New Port Beach, CA)

    1982-01-01

    Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

  12. Washington Silicon Plant Makes Way for Cheaper Solar—and Jobs

    Office of Energy Efficiency and Renewable Energy (EERE)

    Refining the raw material used in photovoltaic panels, silicon, is not a cheap endeavor, and has kept the price of panels more expensive than other energy sources. But REC Silicon, one of the largest producers of raw material, has found a way to lower costs thanks in part to the Recovery Act.

  13. NREL Core Program (NCPV), Session: Film Silicon (Presentation)

    SciTech Connect (OSTI)

    Branz, H. M.

    2008-04-01

    This project supports the Solar America Initiative by: R and D that contributes to goal of grid parity by 2015; research to fill the industry R and D pipeline for next-generation low-cost scalable products; development of industry collaborative research; and improvement of NREL tools and capabilities for film silicon research. The project addresses both parts of film silicon roadmap: (1) amorphous-silicon-based thin film PV--amorphous and nanocrystalline materials, present '2nd generation' technology, 4% of world PV sales in 2007; (2) advanced R and D toward film crystal silicon--definition, large-grained or single-crystal silicon < 100 {micro}m thick; 3-8 year horizon; and goal of reaching 15% cells at area costs approaching thin films.

  14. Enhanced densification under shock compression in porous silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Lane, J. Matthew; Thompson, Aidan Patrick; Vogler, Tracy

    2014-10-27

    Under shock compression, most porous materials exhibit lower densities for a given pressure than that of a full-dense sample of the same material. However, some porous materials exhibit an anomalous, or enhanced, densification under shock compression. The mechanism driving this behavior was not completely determined. We present evidence from atomistic simulation that pure silicon belongs to this anomalous class of materials and demonstrate the associated mechanisms responsible for the effect in porous silicon. Atomistic response indicates that local shear strain in the neighborhood of collapsing pores catalyzes a local solid-solid phase transformation even when bulk pressures are below the thermodynamicmore »phase transformation pressure. This metastable, local, and partial, solid-solid phase transformation, which accounts for the enhanced densification in silicon, is driven by the local stress state near the void, not equilibrium thermodynamics. This mechanism may also explain the phenomenon in other covalently bonded materials.« less

  15. Hybrid silicon evanescent approach to optical interconnects

    E-Print Network [OSTI]

    2009-01-01

    Big Island, HI, USA, 2006 Hybrid silicon evanescent approach10.1007/s00339-009-5118-1 Hybrid silicon evanescent approachthe recently developed hybrid silicon evanescent platform (

  16. Longi Silicon Materials Corp | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervarLeeds, UnitedLibertyLite OnCountyLongchuan CountyMinhongLongi

  17. Analytical and experimental evaluation of joining silicon nitride to metal and silicon carbide to metal for advanced heat engine applications. Final report

    SciTech Connect (OSTI)

    Kang, S.; Selverian, J.H.; O`Neil, D.; Kim, H. [GTE Labs., Inc., Waltham, MA (US); Kim, K. [Brown Univ., Providence, RI (US). Div. of Engineering

    1993-05-01

    This report summarizes the results of Phase 2 of Analytical and Experimental Evaluation of Joining Silicon Nitride to Metal and Silicon Carbide to Metal for Advanced Heat Engine Applications. A general methodology was developed to optimize the joint geometry and material systems for 650{degrees}C applications. Failure criteria were derived to predict the fracture of the braze and ceramic. Extensive finite element analyses (FEA) were performed to examine various joint geometries and to evaluate the affect of different interlayers on the residual stress state. Also, material systems composed of coating materials, interlayers, and braze alloys were developed for the program based on the chemical stability and strength of the joints during processing, and service. The FEA results were compared with experiments using two methods: (1) an idealized strength relationship of the ceramic, and (2) a probabilistic analysis of the ceramic strength (NASA CARES). The results showed that the measured strength of the joint reached 30--80% of the strength predicted by FEA. Also, potential high-temperature braze alloys were developed and evaluated for the high-temperature application of ceramic-metal joints. 38 tabs, 29 figs, 20 refs.

  18. Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

    SciTech Connect (OSTI)

    Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

    2014-10-27

    We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ?100??s or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1??m of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461??s. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

  19. Crystalline Silicon Photovoltaics Research

    Broader source: Energy.gov [DOE]

    DOE supports crystalline silicon photovoltaic (PV) research and development efforts that lead to market-ready technologies. Below are a list of the projects, summary of the benefits, and discussion...

  20. Silicon And Silicon-germanium Epitaxy For Quantum Dot Device Fabrications

    E-Print Network [OSTI]

    as they provide highly tunable structures for trapping and manipu- lating individual electrons/silicon- germanium material heterosystem. We describe the growth of two-dimensional electron gas structures advisor Professor James C. Sturm, whose perpetual enthusiasm, stimulating insight, and constant

  1. Photovoltaic Materials

    SciTech Connect (OSTI)

    Duty, C.; Angelini, J.; Armstrong, B.; Bennett, C.; Evans, B.; Jellison, G. E.; Joshi, P.; List, F.; Paranthaman, P.; Parish, C.; Wereszczak, A.

    2012-10-15

    The goal of the current project was to help make the US solar industry a world leader in the manufacture of thin film photovoltaics. The overall approach was to leverage ORNL’s unique characterization and processing technologies to gain a better understanding of the fundamental challenges for solar cell processing and apply that knowledge to targeted projects with industry members. ORNL has the capabilities in place and the expertise required to understand how basic material properties including defects, impurities, and grain boundaries affect the solar cell performance. ORNL also has unique processing capabilities to optimize the manufacturing process for fabrication of high efficiency and low cost solar cells. ORNL recently established the Center for Advanced Thin-film Systems (CATS), which contains a suite of optical and electrical characterization equipment specifically focused on solar cell research. Under this project, ORNL made these facilities available to industrial partners who were interested in pursuing collaborative research toward the improvement of their product or manufacturing process. Four specific projects were pursued with industrial partners: Global Solar Energy is a solar industry leader in full scale production manufacturing highly-efficient Copper Indium Gallium diSelenide (CIGS) thin film solar material, cells and products. ORNL worked with GSE to develop a scalable, non-vacuum, solution technique to deposit amorphous or nanocrystalline conducting barrier layers on untextured stainless steel substrates for fabricating high efficiency flexible CIGS PV. Ferro Corporation’s Electronic, Color and Glass Materials (“ECGM”) business unit is currently the world’s largest supplier of metallic contact materials in the crystalline solar cell marketplace. Ferro’s ECGM business unit has been the world's leading supplier of thick film metal pastes to the crystalline silicon PV industry for more than 30 years, and has had operational cells and modules in the field for 25 years. Under this project, Ferro leveraged world leading analytical capabilities at ORNL to characterize the paste-to-silicon interface microstructure and develop high efficiency next generation contact pastes. Ampulse Corporation is developing a revolutionary crystalline-silicon (c-Si) thin-film solar photovoltaic (PV) technology. Utilizing uniquely-textured substrates and buffer materials from the Oak Ridge National Laboratory (ORNL), and breakthroughs in Hot-Wire Chemical Vapor Deposition (HW-CVD) techniques in epitaxial silicon developed at the National Renewable Energy Laboratory (NREL), Ampulse is creating a solar technology that is tunable in silicon thickness, and hence in efficiency and economics, to meet the specific requirements of multiple solar PV applications. This project focused on the development of a high rate deposition process to deposit Si, Ge, and Si1-xGex films as an alternate to hot-wire CVD. Mossey Creek Solar is a start-up company with great expertise in the solar field. The primary interest is to create and preserve jobs in the solar sector by developing high-yield, low-cost, high-efficiency solar cells using MSC-patented and -proprietary technologies. The specific goal of this project was to produce large grain formation in thin, net-shape-thickness mc-Si wafers processed with high-purity silicon powder and ORNL's plasma arc lamp melting without introducing impurities that compromise absorption coefficient and carrier lifetime. As part of this project, ORNL also added specific pieces of equipment to enhance our ability to provide unique insight for the solar industry. These capabilities include a moisture barrier measurement system, a combined physical vapor deposition and sputtering system dedicated to cadmium-containing deposits, adeep level transient spectroscopy system useful for identifying defects, an integrating sphere photoluminescence system, and a high-speed ink jet printing system. These tools were combined with others to study the effect of defects on the performance of crystalline silicon and

  2. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M.A.; Mariella, R.P. Jr.; Carrano, A.V.; Balch, J.W.

    1996-12-31

    A silicon-based sleeve type chemical reaction chamber is described that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis. 32 figs.

  3. Silicon-based sleeve devices for chemical reactions

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Mariella, Jr., Raymond P. (Danville, CA); Carrano, Anthony V. (Livermore, CA); Balch, Joseph W. (Livermore, CA)

    1996-01-01

    A silicon-based sleeve type chemical reaction chamber that combines heaters, such as doped polysilicon for heating, and bulk silicon for convection cooling. The reaction chamber combines a critical ratio of silicon and silicon nitride to the volume of material to be heated (e.g., a liquid) in order to provide uniform heating, yet low power requirements. The reaction chamber will also allow the introduction of a secondary tube (e.g., plastic) into the reaction sleeve that contains the reaction mixture thereby alleviating any potential materials incompatibility issues. The reaction chamber may be utilized in any chemical reaction system for synthesis or processing of organic, inorganic, or biochemical reactions, such as the polymerase chain reaction (PCR) and/or other DNA reactions, such as the ligase chain reaction, which are examples of a synthetic, thermal-cycling-based reaction. The reaction chamber may also be used in synthesis instruments, particularly those for DNA amplification and synthesis.

  4. The Materials Genome Initiative September 25, 2013

    E-Print Network [OSTI]

    Nair, Sankar

    The Materials Genome Initiative September 25, 2013 Dr. Cyrus Wadia Assistant Director, Clean Energy're launching what we call the Materials Genome Initiative. The invention of silicon circuits and lithium ion

  5. Method of fabricating silicon carbide coatings on graphite surfaces

    DOE Patents [OSTI]

    Varacalle, D.J. Jr.; Herman, H.; Burchell, T.D.

    1994-07-26

    The vacuum plasma spray process produces well-bonded, dense, stress-free coatings for a variety of materials on a wide range of substrates. The process is used in many industries to provide for the excellent wear, corrosion resistance, and high temperature behavior of the fabricated coatings. In this application, silicon metal is deposited on graphite. This invention discloses the optimum processing parameters for as-sprayed coating qualities. The method also discloses the effect of thermal cycling on silicon samples in an inert helium atmosphere at about 1,600 C which transforms the coating to silicon carbide. 3 figs.

  6. Silicon nitride protective coatings for silvered glass mirrors

    DOE Patents [OSTI]

    Tracy, C.E.; Benson, D.K.

    1984-07-20

    A protective diffusion barrier for metalized mirror structures is provided by a layer or coating of silicon nitride which is a very dense, transparent, dielectric material that is impervious to water, alkali, and other impurities and corrosive substances that typically attack the metal layers of mirrors and cause degradation of the mirrors' reflectivity. The silicon nitride layer can be deposited on the substrate prior to metal deposition thereon to stabilize the metal/substrate interface, and it can be deposited over the metal to encapsulate it and protect the metal from corrosion or other degradation. Mirrors coated with silicon nitride according to this invention can also be used as front surface mirrors.

  7. General Permit General Permit

    E-Print Network [OSTI]

    L General Permit Parking LOT A General Permit Parking LOT C General Permit Parking LOT R Reserved Parking LOT D Faculty/Staff Parking LOT K General Permit Parking LOT J Reserved Parking PV LOT General Parking after 3 p.m. WEST CAMPUS PARKING LOT O General Permit Parking LOT M General Permit Parking LOT P

  8. General Permit General Permit

    E-Print Network [OSTI]

    98 28 28 60 96 31 7 23 LOT L General Permit Parking LOT A General Permit Parking LOT C General Permit Parking LOT R Reserved Parking LOT D Faculty/Staff Parking LOT K General Permit Parking LOT J Reserved Parking PV LOT General Parking after 3 p.m. WEST CAMPUS PARKING LOT O General Permit Parking LOT M General

  9. Fabrication and properties of microporous silicon 

    E-Print Network [OSTI]

    Shao, Jianzhong

    1994-01-01

    structure as the wafer from which it was fabricated. Oxidization at 800'C converts the porous silicon totally to amorphous silicon dioxide. Oxidation at 600'C produces a mixture of crystalline silicon and amorphous silicon dioxide. The pore structure...

  10. Hardfacing material

    DOE Patents [OSTI]

    Branagan, Daniel J. (Iona, ID)

    2012-01-17

    A method of producing a hard metallic material by forming a mixture containing at least 55% iron and at least one of boron, carbon, silicon and phosphorus. The mixture is formed into an alloy and cooled to form a metallic material having a hardness of greater than about 9.2 GPa. The invention includes a method of forming a wire by combining a metal strip and a powder. The metal strip and the powder are rolled to form a wire containing at least 55% iron and from two to seven additional elements including at least one of C, Si and B. The invention also includes a method of forming a hardened surface on a substrate by processing a solid mass to form a powder, applying the powder to a surface to form a layer containing metallic glass, and converting the glass to a crystalline material having a nanocrystalline grain size.

  11. Silicon Based Anodes for Li-Ion Batteries

    SciTech Connect (OSTI)

    Zhang, Jiguang; Wang, Wei; Xiao, Jie; Xu, Wu; Graff, Gordon L.; Yang, Zhenguo; Choi, Daiwon; Li, Xiaolin; Wang, Deyu; Liu, Jun

    2012-06-15

    Silicon is environmentally benign and ubiquitous. Because of its high specific capacity, it is considered one of the most promising candidates to replace the conventional graphite negative electrode used in today's Li ion batteries. Silicon has a theoretical specific capacity of nearly 4200 mAh/g (Li21Si5), which is 10 times larger than the specific capacity of graphite (LiC6, 372 mAh/g). However, the high capacity of silicon is associated with huge volume changes (more than 300 percent) when alloyed with lithium, which can cause severe cracking and pulverization of the electrode and lead to significant capacity loss. Significant scientific research has been conducted to circumvent the deterioration of silicon based anode materials during cycling. Various strategies, such as reduction of particle size, generation of active/inactive composites, fabrication of silicon based thin films, use of alternative binders, and the synthesis of 1-D silicon nanostructures have been implemented by a number of research groups. Fundamental mechanistic research has also been performed to better understand the electrochemical lithiation and delithiation process during cycling in terms of crystal structure, phase transitions, morphological changes, and reaction kinetics. Although efforts to date have not attained a commercially viable Si anode, further development is expected to produce anodes with three to five times the capacity of graphite. In this chapter, an overview of research on silicon based anodes used for lithium-ion battery applications will be presented. The overview covers electrochemical alloying of the silicon with lithium, mechanisms responsible for capacity fade, and methodologies adapted to overcome capacity degradation observed during cycling. The recent development of silicon nanowires and nanoparticles with significantly improved electrochemical performance will also be discussed relative to the mechanistic understanding. Finally, future directions on the development of silicon based anodes will be considered.

  12. Grain Boundary (GB) Studies in Nano- and Micro- Crystalline Materials

    E-Print Network [OSTI]

    Tanju, Mst Sohanazaman

    2011-01-01

    boundaries in silicon? Materials research society, Vol.122,bicrystal? Journal of Materials Science, 40(2005)3137- 5.in ZnO? Journal of Materials Science, 40(2005)3067-3074. 6.

  13. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, Anthony M. (Menlo Park, CA)

    1997-01-01

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

  14. Silicon on insulator achieved using electrochemical etching

    DOE Patents [OSTI]

    McCarthy, A.M.

    1997-10-07

    Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

  15. Characterisation Studies of Silicon Photomultipliers

    E-Print Network [OSTI]

    Patrick Eckert; Hans-Christian Schultz-Coulon; Wei Shen; Rainer Stamen; Alexander Tadday

    2010-04-01

    This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.

  16. Characterisation Studies of Silicon Photomultipliers

    E-Print Network [OSTI]

    Eckert, Patrick; Shen, Wei; Stamen, Rainer; Tadday, Alexander

    2010-01-01

    This paper describes an experimental setup that has been developed to measure and characterise properties of Silicon Photomultipliers (SiPM). The measured SiPM properties are of general interest for a multitude of potential applications and comprise the Photon Detection Efficiency (PDE), the voltage dependent cross-talk and the after-pulse probabilities. With the described setup the absolute PDE can be determined as a function of wavelength covering a spectral range from 350 to 1000nm. In addition, a method is presented which allows to study the pixel uniformity in terms of the spatial variations of sensitivity and gain. The results from various commercially available SiPMs - three HAMAMATSU MPPCs and one SensL SPM - are presented and compared.

  17. Fabrication of porous silicon membranes 

    E-Print Network [OSTI]

    Yue, Wing Kong

    1988-01-01

    . Porous silicon layer is formed by the local dissolution which is initiated by the surface layer and is promoted by the hindrance layers composed of the silicic acid. Local etching or local dissolution is the cause of forming porous structure... of pores were 25 to 45 A with a mean value of 38 A. Microstructure of porous silicon studied by Besle et al. showed two distinct 17 patterns: the structure pattern of porous silicon film on heavily doped silicon and that on slightly doped silicon [26...

  18. Solution-processed amorphous silicon surface passivation layers

    SciTech Connect (OSTI)

    Mews, Mathias Sontheimer, Tobias; Korte, Lars; Rech, Bernd; Mader, Christoph; Traut, Stephan; Wunnicke, Odo

    2014-09-22

    Amorphous silicon thin films, fabricated by thermal conversion of neopentasilane, were used to passivate crystalline silicon surfaces. The conversion is investigated using X-ray and constant-final-state-yield photoelectron spectroscopy, and minority charge carrier lifetime spectroscopy. Liquid processed amorphous silicon exhibits high Urbach energies from 90 to 120?meV and 200?meV lower optical band gaps than material prepared by plasma enhanced chemical vapor deposition. Applying a hydrogen plasma treatment, a minority charge carrier lifetime of 1.37?ms at an injection level of 10{sup 15}/cm{sup 3} enabling an implied open circuit voltage of 724?mV was achieved, demonstrating excellent silicon surface passivation.

  19. Amorphous silicon photovoltaic devices

    DOE Patents [OSTI]

    Carlson, David E.; Lin, Guang H.; Ganguly, Gautam

    2004-08-31

    This invention is a photovoltaic device comprising an intrinsic or i-layer of amorphous silicon and where the photovoltaic device is more efficient at converting light energy to electric energy at high operating temperatures than at low operating temperatures. The photovoltaic devices of this invention are suitable for use in high temperature operating environments.

  20. Silicon-tin oxynitride glassy composition and use as anode for lithium-ion battery

    DOE Patents [OSTI]

    Neudecker, Bernd J. (Knoxville, TN); Bates, John B. (Oak Ridge, TN)

    2001-01-01

    Disclosed are silicon-tin oxynitride glassy compositions which are especially useful in the construction of anode material for thin-film electrochemical devices including rechargeable lithium-ion batteries, electrochromic mirrors, electrochromic windows, and actuators. Additional applications of silicon-tin oxynitride glassy compositions include optical fibers and optical waveguides.

  1. Mechanism of fatigue in micron-scale films of polycrystalline silicon for microelectromechanical applications

    SciTech Connect (OSTI)

    Muhlstein, C.L.; Stach, E.A.; Ritchie, R.O.

    2001-08-02

    Reported nearly a decade ago, cyclic fatigue failure in silicon thin films has remained a mystery. Silicon does not display the room temperature plasticity or extrinsic toughening mechanisms necessary to cause fatigue in either ductile (e.g., metals) or brittle (e.g., ceramics and ordered mintermetallic) materials.

  2. FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE

    E-Print Network [OSTI]

    Lisbon, University of

    FIRST SOLAR CELLS ON SILICON RIBBONS OBTAINED BY FAST CVD FROM SILANE C. R. Pinto, J. M. Serra, M on solar cells made on silicon ribbons obtained by a two-step process: pre-ribbons obtained by CVD followed be doped to make them suitable as base material for solar cells. To this purpose the ribbons were

  3. New Nanostructured Li2S/Silicon Rechargeable Battery with High Specific Energy

    E-Print Network [OSTI]

    Cui, Yi

    of the active electrode materials. KEYWORDS Energy storage, lithium-sulfur battery, mesoporous carbon, silicon, California 94305 ABSTRACT Rechargeable lithium ion batteries are important energy storage devices; howeverNew Nanostructured Li2S/Silicon Rechargeable Battery with High Specific Energy Yuan Yang,,§ Matthew

  4. Japan/US Joint Seminar: Molecular and Microscale Thermophysical Phenomena in Nanotechnology, August 8 11, 1999, Sendai FT-ICR study of chemical reaction of silicon clusters

    E-Print Network [OSTI]

    Maruyama, Shigeo

    8­ 11, 1999, Sendai FT-ICR study of chemical reaction of silicon clusters S. Maruyama, M. Kohno and characterization of the quantum dot. Here, experimental measurements of chemical reaction of silicon clusters Sin reaction of semiconductor materials such as silicon and germanium for the current nanotechnology

  5. Advances in amorphous silicon photovoltaic technology

    SciTech Connect (OSTI)

    Carlson, D.E.; Rajan, K.; Arya, R.R.; Willing, F.; Yang, L.

    1998-10-01

    With the advent of new multijunction thin film solar cells, amorphous silicon photovoltaic technology is undergoing a commercial revival with about 30 megawatts of annual capacity coming on-line in the next year. These new {ital a}{endash}Si multijunction modules should exhibit stabilized conversion efficiencies on the order of 8{percent}, and efficiencies over 10{percent} may be obtained in the next several years. The improved performance results from the development of amorphous and microcrystalline silicon alloy films with improved optoelectronic properties and from the development of more efficient device structures. Moreover, the manufacturing costs for these multijunction modules using the new large-scale plants should be on the order of {dollar_sign}1 per peak watt. These new modules may find widespread use in solar farms, photovoltaic roofing, as well as in traditional remote applications. {copyright} {ital 1998 Materials Research Society.}

  6. Philips Lumileds Is Exploring the Use of Silicon Substrates to Lower the Cost of LEDs

    Broader source: Energy.gov [DOE]

    With the help of DOE funding, Philips Lumileds is exploring the use of nitride epitaxy on 150mm silicon substrates to produce low-cost, warm-white, high-performance general-illumination LEDs. Most LEDs are made with C-plane sapphire substrates, but silicon—at roughly half a penny per square millimeter—is much cheaper, and it's also easier to obtain. Philips Lumileds is attempting to adapt the use of silicon to the manufacture of LEDs, drawing upon the knowledge base and depreciated equipment of the computer industry, which has been using silicon substrates for decades.

  7. Characterizing the effects of free carriers in fully-etched, dielectric-clad silicon waveguides

    E-Print Network [OSTI]

    Sharma, Rajat; Lin, Hung-Hsi; Vallini, Felipe; Fainman, Yeshaiahu

    2015-01-01

    We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used for these charges are obtained from the measured capacitance-voltage (C-V) characteristics of SiO2, SiNx, and Al2O3 thin films deposited on silicon substrates. The effect of the charges on the properties of silicon waveguides is then calculated using the semiconductor physics tool Silvaco in combination with the finite-difference time-domain (FDTD) method solver Lumerical. Our results show that, in addition to being a critical factor in the analysis of such active devices as capacitively-driven silicon modulators, this effect should also be taken into account when considering the propagation losses of passive silicon waveguides.

  8. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Kaplan, Selig N. (El Cerrito, CA); Perez-Mendez, Victor (Berkeley, CA)

    1992-01-01

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n type, intrinsic, p type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography.

  9. High resolution amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Kaplan, S.N.; Perez-Mendez, V.

    1992-05-26

    A radiation detector employing amorphous Si:H cells in an array with each detector cell having at least three contiguous layers (n-type, intrinsic, p-type), positioned between two electrodes to which a bias voltage is applied. An energy conversion layer atop the silicon cells intercepts incident radiation and converts radiation energy to light energy of a wavelength to which the silicon cells are responsive. A read-out device, positioned proximate to each detector element in an array allows each such element to be interrogated independently to determine whether radiation has been detected in that cell. The energy conversion material may be a layer of luminescent material having a columnar structure. In one embodiment a column of luminescent material detects the passage therethrough of radiation to be detected and directs a light beam signal to an adjacent a-Si:H film so that detection may be confined to one or more such cells in the array. One or both electrodes may have a comb structure, and the teeth of each electrode comb may be interdigitated for capacitance reduction. The amorphous Si:H film may be replaced by an amorphous Si:Ge:H film in which up to 40 percent of the amorphous material is Ge. Two dimensional arrays may be used in X-ray imaging, CT scanning, crystallography, high energy physics beam tracking, nuclear medicine cameras and autoradiography. 18 figs.

  10. Multicolored Vertical Silicon Nanowires

    SciTech Connect (OSTI)

    Seo, Kwanyong; Wober, Munib; Steinvurzel, P.; Schonbrun, E.; Dan, Yaping; Ellenbogen, T.; Crozier, K. B.

    2011-04-13

    We demonstrate that vertical silicon nanowires take on a surprising variety of colors covering the entire visible spectrum, in marked contrast to the gray color of bulk silicon. This effect is readily observable by bright-field microscopy, or even to the naked eye. The reflection spectra of the nanowires each show a dip whose position depends on the nanowire radii. We compare the experimental data to the results of finite difference time domain simulations to elucidate the physical mechanisms behind the phenomena we observe. The nanowires are fabricated as arrays, but the vivid colors arise not from scattering or diffractive effects of the array, but from the guided mode properties of the individual nanowires. Each nanowire can thus define its own color, allowing for complex spatial patterning. We anticipate that the color filter effect we demonstrate could be employed in nanoscale image sensor devices.

  11. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Perez-Mendez, Victor (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1992-01-01

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification.

  12. Amorphous silicon radiation detectors

    DOE Patents [OSTI]

    Street, R.A.; Perez-Mendez, V.; Kaplan, S.N.

    1992-11-17

    Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high electric fields upon application of a bias thereby beneficially resulting in a reduction in noise from contact injection and an increase in signal including avalanche multiplication and gain of the signal produced by incoming high energy radiation. These enhanced radiation sensitive devices can be used as measuring and detection means for visible light, low energy photons and high energy ionizing particles such as electrons, x-rays, alpha particles, beta particles and gamma radiation. Particular utility of the device is disclosed for precision powder crystallography and biological identification. 13 figs.

  13. Making silicon stronger.

    SciTech Connect (OSTI)

    Boyce, Brad Lee

    2010-11-01

    Silicon microfabrication has seen many decades of development, yet the structural reliability of microelectromechanical systems (MEMS) is far from optimized. The fracture strength of Si MEMS is limited by a combination of poor toughness and nanoscale etch-induced defects. A MEMS-based microtensile technique has been used to characterize the fracture strength distributions of both standard and custom microfabrication processes. Recent improvements permit 1000's of test replicates, revealing subtle but important deviations from the commonly assumed 2-parameter Weibull statistical model. Subsequent failure analysis through a combination of microscopy and numerical simulation reveals salient aspects of nanoscale flaw control. Grain boundaries, for example, suffer from preferential attack during etch-release thereby forming failure-critical grain-boundary grooves. We will discuss ongoing efforts to quantify the various factors that affect the strength of polycrystalline silicon, and how weakest-link theory can be used to make worst-case estimates for design.

  14. A silicon electromechanical photodetector

    E-Print Network [OSTI]

    Tallur, Siddharth

    2013-01-01

    Opto-mechanical systems have enabled wide-band optical frequency conversion and multi-channel all-optical radio frequency amplification. Realization of an on-chip silicon communication platform is limited by photodetectors needed to convert optical information to electrical signals for further signal processing. In this paper we present a coupled silicon micro-resonator, which converts near-IR optical intensity modulation at 174.2MHz and 1.198GHz into motional electrical current. This device emulates a photodetector which detects intensity modulation of continuous wave laser light in the full-width-at-half-maximum bandwidth of the mechanical resonance. The resonant principle of operation eliminates dark current challenges associated with convetional photodetectors.

  15. Dipolar second harmonic generation in inversion symmetric materials

    E-Print Network [OSTI]

    Hardhienata, Hendradi; Prylepa, Andrii; Reitböck, Cornelia; Hingerl, Kurt

    2012-01-01

    It is generally argued that material classes with inversion symmetry such as silicon do not produce bulk dipole related second harmonic generation (SHG). So, SHG is then either ascribed to surface effects or bulk related electric quadrupol or magnetic dipole effects. In this letter we show analytically that due to the fact of the decaying harmonic electric field certain Si facets, as eg. Si(111), produce a bulk dipole SHG response and we propose an experiment, exploiting the different dispersion for the fundamental as well as frequency doubled radiation to determine this effect.

  16. Diamond-silicon carbide composite

    DOE Patents [OSTI]

    Qian, Jiang; Zhao, Yusheng

    2006-06-13

    Fully dense, diamond-silicon carbide composites are prepared from ball-milled microcrystalline diamond/amorphous silicon powder mixture. The ball-milled powder is sintered (P=5–8 GPa, T=1400K–2300K) to form composites having high fracture toughness. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPa.dot.m1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness. X-ray diffraction patterns and Raman spectra indicate that amorphous silicon is partially transformed into nanocrystalline silicon at 5 GPa/873K, and nanocrystalline silicon carbide forms at higher temperatures.

  17. Method of making selective crystalline silicon regions containing entrapped hydrogen by laser treatment

    DOE Patents [OSTI]

    Pankove, J.I.; Wu, C.P.

    1982-03-30

    A novel hydrogen rich single crystalline silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystalline silicon without out-gassing the hydrogen. The new material can be used to fabricate semi-conductor devices such as single crystalline silicon solar cells with surface window regions having a greater band gap energy than that of single crystalline silicon without hydrogen. 2 figs.

  18. Analysis of silicon carbide based semiconductor power devices and their application in power factor correction 

    E-Print Network [OSTI]

    Durrani, Yamin Qaisar

    2005-11-01

    Recent technological advances have allowed silicon (Si) semiconductor technology to approach the theoretical limits of the Si material; however, power device requirements for many applications are at a stage that the present Si-based power devices...

  19. Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon

    E-Print Network [OSTI]

    Ganapati, Vidya

    This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to ...

  20. Sacrificial high-temperature phosphorus diffusion gettering for lifetime improvement of multicrystalline silicon wafers

    E-Print Network [OSTI]

    Scott, Stephanie Morgan

    2014-01-01

    Iron is among the most deleterious lifetime-limiting impurities in crystalline silicon solar cells. In as-grown material, iron is present in precipitates and in point defects. To achieve conversion efficiencies in excess ...

  1. Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

    DOE Patents [OSTI]

    Kolodin, Boris; Deshpande, Anirudha R

    2014-09-16

    A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

  2. Effective lifetimes exceeding 300 ?s in gettered p-type epitaxial kerfless silicon for photovoltaics

    E-Print Network [OSTI]

    Powell, D. M.

    We evaluate defect concentrations and investigate the lifetime potential of p-type single-crystal kerfless silicon produced via epitaxy for photovoltaics. In gettered material, low interstitial iron concentrations (as low ...

  3. Reactor physics considerations for implementing silicon carbide cladding into a PWR environment

    E-Print Network [OSTI]

    Dobisesky, Jacob P. (Jacob Paul), 1987-

    2011-01-01

    Silicon carbide (SiC) offers several advantages over zirconium (Zr)-based alloys as a potential cladding material for Pressurized Water Reactors: very slow corrosion rate, ability to withstand much higher temperature with ...

  4. Identification and mitigation of performance-limiting defects in epitaxially grown kerfless silicon for solar cells

    E-Print Network [OSTI]

    Powell, Douglas M. (Douglas Michael)

    2014-01-01

    Reducing material use is a major driver for cost reduction of crystalline silicon photovoltaic modules. The dominant wafer fabrication process employed in the industry today, ingot casting & sawing, wastes approximately ...

  5. Thin Silicon Solar Cells: A Path to 35% Shockley-Queisser Limits

    SciTech Connect (OSTI)

    Ding, Laura; Boccard, Mathieu; Williams, Joshua; Jeffries, April; Gangam, Srikanth; Ghosh, Kunal; Honsberg, Christiana; Bowden, Stuart; Holman, Zachary; Atwater, Harry; Buonassisi, Tonio; Bremner, Stephen; Green, Martin; Balif, Christoph; Bertoni, Mariana

    2014-06-08

    Crystalline silicon technology is expected to remain the leading photovoltaic industry workhorse for decades. We present here the objectives and workplan of a recently launched project funded by the U.S. Department of Energy through the Foundational Program to Advance Cell Efficiency II (FPACE II), which aims at leading crystalline silicon to an efficiency breakthrough. The project will tackle fundamental approach of materials design, defect engineering, device simulations and materials growth and characterization. Among the main novelties, the implementation of carrier selective contacts made of wide bandgap material or stack of materials is investigated for improved passivation, carrier extraction and carrier transport. Based on an initial selection of candidate materials, preliminary experiments are conducted to verify the suitability of their critical parameters as well as preservation of the silicon substrate surface and bulk properties. The target materials include III-V and metal-oxide materials.

  6. Vertical silicon nanowire arrays for gas sensing

    E-Print Network [OSTI]

    Zhao, Hangbo

    2014-01-01

    The goal of this research was to fabricate and characterize vertically aligned silicon nanowire gas sensors. Silicon nanowires are very attractive for gas sensing applications and vertically aligned silicon nanowires are ...

  7. Nuclear breeder reactor fuel element with silicon carbide getter

    DOE Patents [OSTI]

    Christiansen, David W. (Kennewick, WA); Karnesky, Richard A. (Richland, WA)

    1987-01-01

    An improved cesium getter 28 is provided in a breeder reactor fuel element or pin in the form of an extended surface area, low density element formed in one embodiment as a helically wound foil 30 located with silicon carbide, and located at the upper end of the fertile material upper blanket 20.

  8. Results about imaging with silicon strips for Angiography and Mammography

    E-Print Network [OSTI]

    Ramello, Luciano

    is not really useful. #12;FIGURE 1. (Left) Photoelectric conversion efficiency vs. energy for silicon of 300 µm to front configuration efficiency vs. energy: calculation (continuous line) and experimental data (stars]) allows to isolate materials characterized by a different energy dependence of the lin- ear attenuation

  9. CURRENT NEWS Sandwich Solar Cells May See Off Silicon

    E-Print Network [OSTI]

    Rogers, John A.

    to manufacture thin films of GaAs that also allowed versatility in the types of devices they could multiple layers of the material on a single wafer, creating a layered, "pancake" stack of GaAs thin films the photovoltaic (PV) cells are based on silicon. However, alternatives such as GaAs and other compound

  10. Recombination in compensated crystalline silicon for solar cells Daniel Macdonalda)

    E-Print Network [OSTI]

    in an improved short-circuit current, open-circuit voltage, and solar cell efficiency. VC 2011 American InstituteRecombination in compensated crystalline silicon for solar cells Daniel Macdonalda) and Andre. Accordingly, several research groups have dem- onstrated solar cell performance on compensated material

  11. AMORPHOUS SILICON-BASED MINIMODULES WITH SILICONE ELASTOMER ENCAPSULATION

    E-Print Network [OSTI]

    Deng, Xunming

    improved, which may make them suitable for encapsulating solar cells once again. We have recently of terrestrial solar cells. It is well known that EVA turns yellow upon extended exposure to ultraviolet light-based polymers (silicones) may not show this effect. Although silicones were used to encapsulate solar cells

  12. Adhesion Impact of Silicone Contamination during Encapsulation...

    Office of Scientific and Technical Information (OSTI)

    Adhesion Impact of Silicone Contamination during Encapsulation. Citation Details In-Document Search Title: Adhesion Impact of Silicone Contamination during Encapsulation. Abstract...

  13. Thermo-mechanical characterization of silicone foams

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Rangaswamy, Partha; Smith, Nickolaus A.; Cady, Carl M.; Lewis, Matthew W.

    2015-10-01

    Cellular solids such as elastomeric foams are used in many structural applications to absorb and dissipate energy, due to their light weight (low density) and high energy absorption capability. In this paper we will discuss foams derived from S5370, a silicone foam formulation developed by Dow Corning. In the application presented, the foam is consolidated into a cushion component of constant thickness but variable density. A mechanical material model developed by Lewis (2013), predicts material response, in part, as a function of relative density. To determine the required parameters for this model we have obtained the mechanical response in compressionmore »for ambient, cold and hot temperatures. The variable density cushion provided samples sufficient samples so that the effect of sample initial density on the mechanical response could be studied. The mechanical response data showed extreme sensitivity to relative density. We also observed at strains corresponding to 1 MPa a linear relationship between strain and initial density for all temperatures. Samples taken from parts with a history of thermal cycling demonstrated a stiffening response that was a function of temperature, with the trend of more stiffness as temperature increased above ambient. This observation is in agreement with the entropic effects on the thermo-mechanical behavior of silicone polymers. In this study, we present the experimental methods necessary for the development of a material model, the testing protocol, analysis of test data, and a discussion of load (stress) and gap (strain) as a function of sample initial densities and temperatures« less

  14. Fluorination of amorphous thin-film materials with xenon fluoride

    DOE Patents [OSTI]

    Weil, R.B.

    1987-05-01

    A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

  15. Hybrid stretchable circuits on silicone substrate

    SciTech Connect (OSTI)

    Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk [Nanoscience Centre, University of Cambridge, Cambridge CB01FF (United Kingdom); Liu, Q.; Suo, Z. [School of Engineering and Applied Sciences and Kavli Institute for Bionano Science and Technology, Harvard University, Cambridge, Massachusetts 02138 (United States); Lacour, S. P., E-mail: stephanie.lacour@epfl.ch [Centre for Neuroprosthetics and Laboratory for Soft Bioelectronics Interfaces, School of Engineering, Ecole Polytechnique Fédérale de Lausanne, Lausanne 1015 (Switzerland)

    2014-04-14

    When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

  16. Selective etchant for oxide sacrificial material in semiconductor device fabrication

    SciTech Connect (OSTI)

    Clews, Peggy J.; Mani, Seethambal S.

    2005-05-17

    An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.

  17. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1980-01-01

    An amorphous silicon solar cell incorporates a region of intrinsic hydrogenated amorphous silicon fabricated by a glow discharge wherein said intrinsic region is compensated by P-type dopants in an amount sufficient to reduce the space charge density of said region under illumination to about zero.

  18. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, R.A.; Mendez, V.P.; Kaplan, S.N.

    1988-11-15

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation. 15 figs.

  19. Amorphous silicon ionizing particle detectors

    DOE Patents [OSTI]

    Street, Robert A. (Palo Alto, CA); Mendez, Victor P. (Berkeley, CA); Kaplan, Selig N. (El Cerrito, CA)

    1988-01-01

    Amorphous silicon ionizing particle detectors having a hydrogenated amorphous silicon (a--Si:H) thin film deposited via plasma assisted chemical vapor deposition techniques are utilized to detect the presence, position and counting of high energy ionizing particles, such as electrons, x-rays, alpha particles, beta particles and gamma radiation.

  20. Characteristic study of silicon sensor for ILD ECAL

    E-Print Network [OSTI]

    Shusuke Takada; Hiroto Hirai; Kiyotomo Kawagoe; Yohei Miyazaki; Yuji Sudo; Taikan Suehara; Hiroki Sumida; Tatsuhiko Tomita; Hiraku Ueno; Tamaki Yoshioka

    2015-03-31

    Excellent jet energy measurement is important at the International Linear Collider (ILC) because most of interesting physics processes decay into multi-jet final states. We employ a particle flow method to reconstruct particles, hence International Large Detector (ILD) needs high spatial resolution which can separate each particle in jets. We study pixelized silicon sensors as active material of ILD Silicon electro- magnetic calorimeter (SiECAL). This paper reports studies of temperature and humidity dependence on dark current and response of laser injection.

  1. Characteristic study of silicon sensor for ILD ECAL

    E-Print Network [OSTI]

    Takada, Shusuke; Kawagoe, Kiyotomo; Miyazaki, Yohei; Sudo, Yuji; Suehara, Taikan; Sumida, Hiroki; Tomita, Tatsuhiko; Ueno, Hiraku; Yoshioka, Tamaki

    2015-01-01

    Excellent jet energy measurement is important at the International Linear Collider (ILC) because most of interesting physics processes decay into multi-jet final states. We employ a particle flow method to reconstruct particles, hence International Large Detector (ILD) needs high spatial resolution which can separate each particle in jets. We study pixelized silicon sensors as active material of ILD Silicon electro- magnetic calorimeter (SiECAL). This paper reports studies of temperature and humidity dependence on dark current and response of laser injection.

  2. A millimeter-wave antireflection coating for cryogenic silicon lenses

    E-Print Network [OSTI]

    J. M. Lau; J. W. Fowler; T. A. Marriage; L. Page; J. Leong; E. Wishnow; R. Henry; E. Wollck; M. Halpern; D. Marsden; G. Marsden

    2007-01-04

    We have developed and tested an antireflection (AR) coating method for silicon lenses at cryogenic temperatures and millimeter wavelengths. Our particular application is a measurement of the cosmic microwave background. The coating consists of machined pieces of Cirlex glued to the silicon. The measured reflection from an AR coated flat piece is less than 1.5% at the design wavelength. The coating has been applied to flats and lenses and has survived multiple thermal cycles from 300 to 4 K. We present the manufacturing method, the material properties, the tests performed, and estimates of the loss that can be achieved in practical lenses.

  3. Transmissive metallic contact for amorphous silicon solar cells

    DOE Patents [OSTI]

    Madan, A.

    1984-11-29

    A transmissive metallic contact for amorphous silicon semiconductors includes a thin layer of metal, such as aluminum or other low work function metal, coated on the amorphous silicon with an antireflective layer coated on the metal. A transparent substrate, such as glass, is positioned on the light reflective layer. The metallic layer is preferably thin enough to transmit at least 50% of light incident thereon, yet thick enough to conduct electricity. The antireflection layer is preferably a transparent material that has a refractive index in the range of 1.8 to 2.2 and is approximately 550A to 600A thick.

  4. Compensated amorphous silicon solar cell

    DOE Patents [OSTI]

    Devaud, Genevieve (629 S. Humphrey Ave., Oak Park, IL 60304)

    1983-01-01

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon over said substrate and having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the electrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF.sub.3 doped intrinsic layer.

  5. Amorphous silicon/crystalline silicon heterojunctions: The future of high-efficiency silicon solar cells

    E-Print Network [OSTI]

    Firestone, Jeremy

    ;5 Record efficiencies #12;6 Diffused-junction solar cells Diffused-junction solar cell Chemical passivation to ~650 mV #12;7 Silicon heterojunction solar cells a-Si:H provides excellent passivation of c-Si surface Heterojunction solar cell Chemical passivation Chemical passivation #12;8 Voc and silicon heterojunction solar

  6. Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using

    E-Print Network [OSTI]

    Tentzeris, Manos

    Finite Ground Coplanar Lines on CMOS Grade Silicon with a Thick Embedded Silicon Oxide Layer Using grade silicon wafer (poxide layer have been developed using on a CMOS grade silicon substrate ( ~ 4 . 0 1Cl-cm) with an embedded thick silicon oxide layer using

  7. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2012

    E-Print Network [OSTI]

    and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; and other, 5%. Silicon metal: Brazil, 41%; South Africa, 20%; Canada, 12%; Australia, 9%; and other, 18 materials source for aluminum-silicon alloys--was projected to increase by 10% in 2012 compared

  8. (Data in thousand metric tons of silicon content unless otherwise noted) Domestic Production and Use: Estimated value of silicon alloys and metal produced in the United States in 2011

    E-Print Network [OSTI]

    and aluminum alloys and the chemical industry. The semiconductor and solar industries, which manufacture chips%; and other, 4%. Silicon metal: Brazil, 39%; South Africa, 22%; Canada, 13%; Australia, 10%; and other, 16 secondary aluminum production--the primary materials source for aluminum-silicon alloys--was projected

  9. Process for forming retrograde profiles in silicon

    DOE Patents [OSTI]

    Weiner, Kurt H. (San Jose, CA); Sigmon, Thomas W. (Phoenix, AZ)

    1996-01-01

    A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

  10. Cordierite silicon nitride filters. Final report

    SciTech Connect (OSTI)

    Sawyer, J.; Buchan, B.; Duiven, R.; Berger, M.; Cleveland, J.; Ferri, J.

    1992-02-01

    The objective of this project was to develop a silicon nitride based crossflow filter. This report summarizes the findings and results of the project. The project was phased with Phase I consisting of filter material development and crossflow filter design. Phase II involved filter manufacturing, filter testing under simulated conditions and reporting the results. In Phase I, Cordierite Silicon Nitride (CSN) was developed and tested for permeability and strength. Target values for each of these parameters were established early in the program. The values were met by the material development effort in Phase I. The crossflow filter design effort proceeded by developing a macroscopic design based on required surface area and estimated stresses. Then the thermal and pressure stresses were estimated using finite element analysis. In Phase II of this program, the filter manufacturing technique was developed, and the manufactured filters were tested. The technique developed involved press-bonding extruded tiles to form a filter, producing a monolithic filter after sintering. Filters manufactured using this technique were tested at Acurex and at the Westinghouse Science and Technology Center. The filters did not delaminate during testing and operated and high collection efficiency and good cleanability. Further development in areas of sintering and filter design is recommended.

  11. Silicon subsystem mechanical engineering work for the solenoidal detector collaboration

    SciTech Connect (OSTI)

    Miller, W.O.; Barney, M.; Byrd, D.; Christensen, R.W.; Dransfield, G.; Elder, M.; Gamble, M.; Crastataro, C.; Hanlon, J.; Jones, D.C. [and others

    1995-02-01

    The silicon tracking system (STS) for the Solenoidal Detector Collaboration (SDC) represented an order of magnitude increase in size over any silicon system that had been previously built or even planned. In order to meet its performance requirements, it could not simply be a linear scaling of earlier systems, but instead required completely new concepts. The small size of the early systems made it possible to simply move the support hardware and services largely outside the active volume of the system. For a system five meters long, that simply is not an option. The design of the STS for the SDC experiment was the result of numerous compromises between the capabilities required to do the physics and the limitations imposed by cost, material properties, and silicon strip detector characteristics. From the point of view of the physics, the silicon system should start as close to the interaction point as possible. In addition, the detectors should measure the position of particles passing through them with no errors, and should not deflect or interact with the particles in any way. However, cost, radiation damage, and other factors limiting detector performance dictated, other, more realistic values. Radiation damage limited the inner radius of the silicon detectors to about 9 cm, whereas cost limited the outer radius of the detectors to about 50 cm. Cost also limits the half length of the system to about 250 cm. To control the effects of radiation damage on the detectors required operating the system at a temperature of 0{degrees}C or below, and maintaining that temperature throughout life of the system. To summarize, the physics and properties of the silicon strip detectors requires that the detectors be operated at or below 0{degrees}C, be positioned very accurately during assembly and remain positionally stable throughout their operation, and that all materials used be radiation hard and have a large thickness for one radiation length.

  12. PHYSICAL REVIEW B 85, 045202 (2012) Electron spin-phonon interaction symmetries and tunable spin relaxation in silicon and germanium

    E-Print Network [OSTI]

    Flatte, Michael E.

    2012-01-01

    .25.Rb, 72.10.Di I. INTRODUCTION The favorable material properties of silicon have permitted with direct-gap semiconductors, the valley degeneracy of silicon and germanium opens up new channels for spin semiconductor devices,1­3 in which spins of electronic carriers are manipu- lated instead of a charge current

  13. Ultraviolet selective silicon photodiode 

    E-Print Network [OSTI]

    Chintapalli, Koteswara Rao

    1992-01-01

    (' silicon surfa&(& that n&ost of t h&) phologeneraied hole-el( & tron pairs are k&st by surface rccornbinai ion before being nolle&. trxl hy a pr). jun?i, ion. The major cause of surl'a&. e re?omhination is probably due Io lifetim(. shortening ol' Lhe...Luation degrades by &legr(es during (xposure Io high-cncrgy photo(&s such as in ultraviolet light. The second approa?h is a S&:hottky-b))rricr Iype. ol' photodiodc consisting of a iranspar()nt, thin metal film [I I]. ln I. his d(vi?e, ii, is dif%?ult to a...

  14. Alternative fuels for general aviation. Hearing before the Subcommittee on Transportation, Aviation, and Materials, U. S. House of Representatives, Ninety-Eighth Congress, First Session, August 29, 1983

    SciTech Connect (OSTI)

    Not Available

    1983-01-01

    Five witnesses representing general aviation and aviation fuel industries and the Federal Aviation Administration testified on the potential for using alternative fuels in general aviation to counteract the effects of high prices and supply vulnerability on the industry. The witnesses described test results of liquid methane and alcohol fuels, noting that those fuels which most closely emulate the properties of petroleum will best serve the industry's needs. Their testimony covered environmental and economic effects as well as fuel performance. The Synthetic Fuels Corporation, DOE, National Aeronautics and Space Administration, and the Department of Defense, as well as the aviation industry have research programs on aviation fuels.

  15. Method of forming buried oxide layers in silicon

    DOE Patents [OSTI]

    Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir City, TN)

    2000-01-01

    A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

  16. Polarization manipulation in silicon photonics

    E-Print Network [OSTI]

    Su, Zhan, S.M. Massachusetts Institute of Technology

    2013-01-01

    Silicon photonics is moving fast toward industrialization. It satisfies the increasing demand for higher speed, larger bandwidth communication. Thus it has a wide range of applications including high-performance computing, ...

  17. Antifuse with a single silicon-rich silicon nitride insulating layer

    DOE Patents [OSTI]

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  18. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    SciTech Connect (OSTI)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  19. Distribution and Chemical State of Cu-rich Clusters in Silicon: Preprint

    SciTech Connect (OSTI)

    Buonassisi, T.; Marcus, M. A.; Istratov, A. A.; Heuer, M.; Ciszek, T. F.; Lai, B.; Cai, Z.; Weber, E. R.

    2004-08-01

    the chemical state and distribution of Cu-rich clusters were determined in four different silicon-based materials with varying contamination pathways and degrees of oxygen concentration, including as-grown multicrystalline silicon. In all four samples, Cu3Si was the only chemical state observed. Cu3Si clusters were observed at structural defects within all four materials; XBIC measurements revealed that the presence of Cu3Si corresponds to increased recombination activity. Oxidized Cu compounds are not likely to form in silicon. The +1 eV edge shift in the -XAS absorption spectrum of Cu3Si relative to Cu metal is believed to be an indication of a degree of covalent bonding between Cu atoms and their silicon neighbors.

  20. Direct Production of Silicones From Sand

    SciTech Connect (OSTI)

    Larry N. Lewis; F.J. Schattenmann: J.P. Lemmon

    2001-09-30

    Silicon, in the form of silica and silicates, is the second most abundant element in the earth's crust. However the synthesis of silicones (scheme 1) and almost all organosilicon chemistry is only accessible through elemental silicon. Silicon dioxide (sand or quartz) is converted to chemical-grade elemental silicon in an energy intensive reduction process, a result of the exceptional thermodynamic stability of silica. Then, the silicon is reacted with methyl chloride to give a mixture of methylchlorosilanes catalyzed by cooper containing a variety of tract metals such as tin, zinc etc. The so-called direct process was first discovered at GE in 1940. The methylchlorosilanes are distilled to purify and separate the major reaction components, the most important of which is dimethyldichlorosilane. Polymerization of dimethyldichlorosilane by controlled hydrolysis results in the formation of silicone polymers. Worldwide, the silicones industry produces about 1.3 billion pounds of the basic silicon polymer, polydimethylsiloxane.

  1. Sensitivity of silicon 1-MeV damage function to cross-section evaluation

    SciTech Connect (OSTI)

    Griffin, P.J.; Danjaji, M.B.

    1995-12-31

    The electronics radiation hardness-testing community uses the American Society for Testing and Materials (ASTM) E722-93 Standard Practice to define the energy dependence of the nonionizing neutron damage to silicon semiconductors. This neutron displacement damage response function is defined to be equal to the silicon displacement kerma. An Oak Ridge National Laboratory (ORNL) {sup 28}Si cross-section evaluation and the NJOY code are used to define the standard response function to be used in reporting 1-MeV (silicon) neutron damage and in determining neutron damage equivalence between test facilities. This paper provides information for the precision and bias section of the E722 standard.

  2. Breakthrough materials for energy storage

    E-Print Network [OSTI]

    Breakthrough materials for energy storage November 4, 2009 #12;#12;This revolution is happening;Electronics: our early market 5 hours #12;Progress on energy density... #12;Has reached a limit #12;Battery basics Anode Cathode #12;Battery basics Anode Cathode #12;Silicon leads in energy density

  3. Phenomenology and kinematics of discrete plastic deformation events in amorphous silicon : atomistic simulation using the Stillinger-Weber potential

    E-Print Network [OSTI]

    Demkowicz, Michael J. (Michael John), 1977-

    2004-01-01

    The need to understand plastic deformation in amorphous covalently bonded materials arose from the unique mechanical properties of disordered intergranular layers in nc-TiN/a-Si?N? ceramic composites. Silicon was chosen ...

  4. Development of in-situ toughened silicon-rich alloys : a new class of castable engineering ceramics

    E-Print Network [OSTI]

    Fischer, David S., Ph. D. Massachusetts Institute of Technology

    2011-01-01

    Despite having a broad set of desirable properties, silicon's potential as a primary constituent in a structural material has not yet been realized because of its extremely low fracture toughness. Motivated by the ...

  5. Silicon Tetrafluoride on Io

    E-Print Network [OSTI]

    Laura Schaefer; Bruce Fegley Jr

    2005-06-01

    Silicon tetrafluoride (SiF4) is observed in terrestrial volcanic gases and is predicted to be the major F - bearing species in low temperature volcanic gases on Io (Schaefer and Fegley, 2005b). SiF4 gas is also a potential indicator of silica-rich crust on Io. We used F/S ratios in terrestrial and extraterrestrial basalts, and gas/lava enrichment factors for F and S measured at terrestrial volcanoes to calculate equilibrium SiF4/SO2 ratios in volcanic gases on Io. We conclude that SiF4 can be produced at levels comparable to the observed NaCl/SO2 gas ratio. We also considered potential loss processes for SiF4 in volcanic plumes and in Io's atmosphere including ion-molecule reactions, electron chemistry, photochemistry, reactions with the major atmospheric constituents, and condensation. Photochemical destruction (tchem ~ 266 days) and/or condensation as Na2SiF6 (s) appear to be the major sinks for SiF4. We recommend searching for SiF4 with infrared spectroscopy using its 9.7 micron band as done on Earth.

  6. The electron beam hole drilling of silicon nitride thin films

    SciTech Connect (OSTI)

    Howitt, D. G.; Chen, S. J.; Gierhart, B. C.; Smith, R. L.; Collins, S. D.

    2008-01-15

    The mechanism by which an intense electron beam can produce holes in thin films of silicon nitride has been investigated using a combination of in situ electron energy loss spectrometry and electron microscopy imaging. A brief review of electron beam interactions that lead to material loss in different materials is also presented. The loss of nitrogen and silicon decreases with decreasing beam energy and although still observable at a beam energy of 150 keV ceases completely at 120 keV. The linear behavior of the loss rate coupled with the energy dependency indicates that the process is primarily one of direct displacement, involving the sputtering of atoms from the back surface of the specimen with the rate controlling mechanism being the loss of nitrogen.

  7. A general methodology for inverse estimation of the elastic and anelastic properties of anisotropic open-cell porous materials—with application to a melamine foam

    SciTech Connect (OSTI)

    Cuenca, Jacques, E-mail: jcuenca@kth.se; Van der Kelen, Christophe; Göransson, Peter [Marcus Wallenberg Laboratory for Sound and Vibration Research, Royal Institute of Technology (KTH), Teknikringen 8, SE-10044 Stockholm (Sweden)

    2014-02-28

    This paper proposes an inverse estimation method for the characterisation of the elastic and anelastic properties of the frame of anisotropic open-cell foams used for sound absorption. A model of viscoelasticity based on a fractional differential constitutive equation is used, leading to an augmented Hooke's law in the frequency domain, where the elastic and anelastic phenomena appear as distinctive terms in the stiffness matrix. The parameters of the model are nine orthotropic elastic moduli, three angles of orientation of the material principal directions and three parameters governing the anelastic frequency dependence. The inverse estimation consists in numerically fitting the model on a set of transfer functions extracted from a sample of material. The setup uses a seismic-mass measurement repeated in the three directions of space and is placed in a vacuum chamber in order to remove the air from the pores of the sample. The method allows to reconstruct the full frequency-dependent complex stiffness matrix of the frame of an anisotropic open-cell foam and in particular it provides the frequency of maximum energy dissipation by viscoelastic effects. The characterisation of a melamine foam sample is performed and the relation between the fractional-derivative model and other types of parameterisations of the augmented Hooke's law is discussed.

  8. Application of Thin-Film Amorphous Silicon to Chemical Imaging Tatsuo Yoshinobu1

    E-Print Network [OSTI]

    Moritz, Werner

    silicon (a-Si) deposited on a glass substrate was employed as a semiconductor material for the chemical is determined by the thickness of the semiconductor layer as well as by the material parameters properties and the spatial resolution of the a-Si sensors were investigated. Nearly-Nernstian p

  9. Generalized Brewster-Kerker effect in dielectric metasurfaces

    E-Print Network [OSTI]

    Paniagua-Dominguez, Ramon; Miroschnichenko, Andrey E; Krivitsky, Leonid A; Fu, Yuan Hsing; Valuckas, Vytautas; Gonzaga, Leonard; Toh, Yeow Teck; Kay, Anthony Yew Seng; Luk'yanchuk, Boris; Kuznetsov, Arseniy I

    2015-01-01

    Polarization is one of the key properties defining the state of light. It was discovered in the early 19th century by Brewster, among others, while studying light reflected from materials at different angles. These studies led to the first polarizers, based on Brewster's effect. One of the most active trends in photonics now is devoted to the study of miniaturized, sub-wavelength devices exhibiting similar, or even improved, functionalities compared to those achieved with bulk optical elements. In the present work, it is theoretically predicted that a properly designed all-dielectric metasurface exhibits a generalized Brewster effect potentially for any angle, wavelength and polarization of choice. The effect is experimentally demonstrated for an array of silicon nanodisks at visible wavelengths. The underlying physics of this effect can be understood in terms of the suppressed scattering at certain angles that results from the interference between the electric and magnetic dipole resonances excited in the na...

  10. Hybrid Silicon Photonic Integrated Circuit Technology

    E-Print Network [OSTI]

    2013-01-01

    and J. E. Bowers, “Hybrid silicon evanescent devices,”and J. E. Bowers, “A hybrid AlGaInAs-silicon evanescentColdren, and J. E. Bowers, “Hybrid III/V sili- con photonic

  11. Hybrid Silicon Photonics for Optical Interconnects

    E-Print Network [OSTI]

    2011-01-01

    Promising Technology for the hybrid silicon laser in 2007.Electrically pumped hybrid AlGaInAs-silicon evanescentA. Yariv, “Electrically pumped hybrid evanescent Si/InGaAsP

  12. Design of a silicon waver breaker

    E-Print Network [OSTI]

    Mukaddam, Kabir James, 1983-

    2005-01-01

    Usually multiple MEMS or IC devices are fabricated on a single silicon wafer. Manually separating the components from each other involves scribing and fracturing the silicon. This thesis presents a design for a tool to aid ...

  13. Nucleation and solidification of silicon for photovoltaics

    E-Print Network [OSTI]

    Appapillai, Anjuli T. (Anjuli Tara)

    2010-01-01

    The majority of solar cells produced today are made with crystalline silicon wafers, which are typically manufactured by growing a large piece of silicon and then sawing it into ~200 pm wafers, a process which converts ...

  14. Ceramic composites reinforced with modified silicon carbide whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1990-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  15. Bagdad Plant Raymond J. Polinski 585 Silicon Drive General Manager

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p uBUS SERVICE SUBSIDIES ATj.BOULDERofBadge Office

  16. System and method for liquid silicon containment

    SciTech Connect (OSTI)

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2014-06-03

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding ember adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  17. Silicon crystal growing by oscillating crucible technique

    DOE Patents [OSTI]

    Schwuttke, G.H.; Kim, K.M.; Smetana, P.

    1983-08-03

    A process for growing silicon crystals from a molten melt comprising oscillating the container during crystal growth is disclosed.

  18. Copper doped polycrystalline silicon solar cell

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (La Canada, CA); Koliwad, Krishna M. (La Canada, CA); Daud, Taher (La Crescenta, CA)

    1981-01-01

    Photovoltaic cells having improved performance are fabricated from polycrystalline silicon containing copper segregated at the grain boundaries.

  19. System and method for liquid silicon containment

    DOE Patents [OSTI]

    Cliber, James A; Clark, Roger F; Stoddard, Nathan G; Von Dollen, Paul

    2013-05-28

    This invention relates to a system and a method for liquid silicon containment, such as during the casting of high purity silicon used in solar cells or solar modules. The containment apparatus includes a shielding member adapted to prevent breaching molten silicon from contacting structural elements or cooling elements of a casting device, and a volume adapted to hold a quantity of breaching molten silicon with the volume formed by a bottom and one or more sides.

  20. Silicon Photonics: The Inside Story

    E-Print Network [OSTI]

    Jalali, Bahram

    2008-01-01

    The electronic chip industry embodies the height of technological sophistication and economics of scale. Fabricating inexpensive photonic components by leveraging this mighty manufacturing infrastructure has fueled intense interest in silicon photonics. If it can be done economically and in an energy efficient manner, empowering silicon with optical functionality will bring optical communications to the realm of computers where limitations of metallic interconnects are threatening the industry's future. The field is making stunning progress and stands to have a bright future, as long as the community recognizes the real challenges, and maintains an open mind with respect to its applications. This talk will review recent 'game changing' developments and discuss promising applications beyond data communication. It will conclude with recent observation of extreme-value statistical behavior in silicon photonics, a powerful example of how scientific discoveries can unexpectedly emerge in the course of technology d...

  1. Tandem junction amorphous silicon solar cells

    DOE Patents [OSTI]

    Hanak, Joseph J. (Lawrenceville, NJ)

    1981-01-01

    An amorphous silicon solar cell has an active body with two or a series of layers of hydrogenated amorphous silicon arranged in a tandem stacked configuration with one optical path and electrically interconnected by a tunnel junction. The layers of hydrogenated amorphous silicon arranged in tandem configuration can have the same bandgap or differing bandgaps.

  2. SILICON--1999 681 By Thomas S. Jones

    E-Print Network [OSTI]

    SILICON--1999 681 SILICON By Thomas S. Jones Domestic survey data and tables were prepared by Lisa in the foreign trade statistics. For 1999, an overall domestic silicon production of 423,000 metric tons (t led to ongoing legal actions. In the first part of 1999, of three domestic producers involved in civil

  3. Process of preparing tritiated porous silicon

    DOE Patents [OSTI]

    Tam, S.W.

    1997-02-18

    A process of preparing tritiated porous silicon is described in which porous silicon is equilibrated with a gaseous vapor containing HT/T{sub 2} gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon. 1 fig.

  4. SILICON PHOTONICS Signal regeneration

    E-Print Network [OSTI]

    Braun, Paul

    of three-dimensional (3D) systems containing defined defect structures has presented a difficult set of fabrication and materials challenges. A review of the recent efforts to introduce defects in 3D PhCs operating at optical frequencies is presented in ref. 12. Previous attempts to define defects in 3D PhCs have been

  5. Mesoporous Silicon Sponge as an Anti-Pulverization Structure for High-Performance Lithium-ion Battery Anodes

    SciTech Connect (OSTI)

    Li, Xiaolin; Gu, Meng; Hu, Shenyang Y.; Kennard, Rhiannon; Yan, Pengfei; Chen, Xilin; Wang, Chong M.; Sailor, Michael J.; Zhang, Jiguang; Liu, Jun

    2014-07-08

    Nanostructured silicon is a promising anode material for high performance lithium-ion batteries, yet scalable synthesis of such materials, and retaining good cycling stability in high loading electrode remain significant challenges. Here, we combine in-situ transmission electron microscopy and continuum media mechanical calculations to demonstrate that large (>20 micron) mesoporous silicon sponge (MSS) prepared by the scalable anodization method can eliminate the pulverization of the conventional bulk silicon and limit particle volume expansion at full lithiation to ~30% instead of ~300% as observed in bulk silicon particles. The MSS can deliver a capacity of ~750 mAh/g based on the total electrode weight with >80% capacity retention over 1000 cycles. The first-cycle irreversible capacity loss of pre-lithiated MSS based anode is only <5%. The insight obtained from MSS also provides guidance for the design of other materials that may experience large volume variation during operations.

  6. SILANE SAFETY IN AMORPHOUS SILICON AND SILICON NITRIDE OPERATIONS

    E-Print Network [OSTI]

    industries in Europe, the United States, and Japan. As PV manufacturing is scaled-up to meet a growing demand) and amorphous silicon (a-Si). In this paper, we review established methods for using this gas safely; they include risk-prevention strategies, passive and active protection systems, outdoor storage, and adequate

  7. Electrical properties of nitrogen-doped float-zone silicon. Interim report, March-1984-March 1985

    SciTech Connect (OSTI)

    O'Leary, M.A.; Mitchel, W.C.

    1985-07-01

    Examination of nitrogen doped float zone silicon indicates that electrical properties are similiar to commerical Czochralski material. This material deserves further consideration for use in high power device and intrinsic infrared detector applications. Temperature-dependent Hall-effect measurements were made on as-received and neutron-transmutation-doped (NTD) sample of a nitrogen-doped float-zone silicon crystal to determine its electrical properties. Samples were studied in both as-received state and after various high-temperature anneals. Results were compared with commerical n-type Czochralski silicon and conventional neutron doped float zone silcion. Undoped, annealed samples of Si:N showed signs of inhomogeneities were not seen in lightly NTD's and annealed nitrogen-doped material, indicating that even light doping will mask effects of the proposed precipitation. No evidence was detected for any electrically active level that could be directly related to the nitrogen.

  8. 3.012 Fundamentals of Materials Science, Fall 2003

    E-Print Network [OSTI]

    Marzari, Nicola

    This subject describes the fundamentals of bonding, energetics, and structure that underpin materials science. From electrons to silicon to DNA: the role of electronic bonding in determining the energy, structure, and ...

  9. Use of additives to improve microstructures and fracture resistance of silicon nitride ceramics

    DOE Patents [OSTI]

    Becher, Paul F. (Oak Ridge, TN); Lin, Hua-Tay (Oak Ridge, TN)

    2011-06-28

    A high-strength, fracture-resistant silicon nitride ceramic material that includes about 5 to about 75 wt-% of elongated reinforcing grains of beta-silicon nitride, about 20 to about 95 wt-% of fine grains of beta-silicon nitride, wherein the fine grains have a major axis of less than about 1 micron; and about 1 to about 15 wt-% of an amorphous intergranular phase comprising Si, N, O, a rare earth element and a secondary densification element. The elongated reinforcing grains have an aspect ratio of 2:1 or greater and a major axis measuring about 1 micron or greater. The elongated reinforcing grains are essentially isotropically oriented within the ceramic microstructure. The silicon nitride ceramic exhibits a room temperature flexure strength of 1,000 MPa or greater and a fracture toughness of 9 MPa-m.sup.(1/2) or greater. The silicon nitride ceramic exhibits a peak strength of 800 MPa or greater at 1200 degrees C. Also included are methods of making silicon nitride ceramic materials which exhibit the described high flexure strength and fracture-resistant values.

  10. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y. Simon (Golden, CO); Landry, Marc D. (Lafayette, CO); Pitts, John R. (Lakewood, CO)

    1997-01-01

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

  11. Method for processing silicon solar cells

    DOE Patents [OSTI]

    Tsuo, Y.S.; Landry, M.D.; Pitts, J.R.

    1997-05-06

    The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystalline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation. 2 figs.

  12. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Basore, Paul A. (Albuquerque, NM); Schubert, W. Kent (Albuquerque, NM)

    1998-08-11

    A process for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon.

  13. Method for fabricating silicon cells

    DOE Patents [OSTI]

    Ruby, D.S.; Basore, P.A.; Schubert, W.K.

    1998-08-11

    A process is described for making high-efficiency solar cells. This is accomplished by forming a diffusion junction and a passivating oxide layer in a single high-temperature process step. The invention includes the class of solar cells made using this process, including high-efficiency solar cells made using Czochralski-grown silicon. 9 figs.

  14. Dispersion toughened silicon carbon ceramics

    DOE Patents [OSTI]

    Wei, G.C.

    1984-01-01

    Fracture resistant silicon carbide ceramics are provided by incorporating therein a particulate dispersoid selected from the group consisting of (a) a mixture of boron, carbon and tungsten, (b) a mixture of boron, carbon and molybdenum, (c) a mixture of boron, carbon and titanium carbide, (d) a mixture of aluminum oxide and zirconium oxide, and (e) boron nitride. 4 figures.

  15. Final report on LDRD Project: Quantum confinement and light emission in silicon nanostructures

    SciTech Connect (OSTI)

    Guilinger, T.R.; Kelly, M.J.; Follstaedt, D.M.

    1995-02-01

    Electrochemically formed porous silicon (PS) was reported in 1991 to exhibit visible photoluminescence. This discovery could lead to the use of integrated silicon-based optoelectronic devices. This LDRD addressed two general goals for optical emission from Si: (1) investigate the mechanisms responsible for light emission, and (2) tailor the microstructure and composition of the Si to obtain photoemission suitable for working devices. PS formation, composition, morphology, and microstructure have been under investigation at Sandia for the past ten years for applications in silicon-on-insulator microelectronics, micromachining, and chemical sensors. The authors used this expertise to form luminescent PS at a variety of wavelengths and have used analytical techniques such as in situ Raman and X-ray reflectivity to investigate the luminescence mechanism and quantify the properties of the porous silicon layer. Further, their experience with ion implantation in Si lead to an investigation into alternate methods of producing Si nanostructures that visibly luminesce.

  16. Narrow band gap amorphous silicon semiconductors

    DOE Patents [OSTI]

    Madan, A.; Mahan, A.H.

    1985-01-10

    Disclosed is a narrow band gap amorphous silicon semiconductor comprising an alloy of amorphous silicon and a band gap narrowing element selected from the group consisting of Sn, Ge, and Pb, with an electron donor dopant selected from the group consisting of P, As, Sb, Bi and N. The process for producing the narrow band gap amorphous silicon semiconductor comprises the steps of forming an alloy comprising amorphous silicon and at least one of the aforesaid band gap narrowing elements in amount sufficient to narrow the band gap of the silicon semiconductor alloy below that of amorphous silicon, and also utilizing sufficient amounts of the aforesaid electron donor dopant to maintain the amorphous silicon alloy as an n-type semiconductor.

  17. Epitaxial growth of silicon for layer transfer

    DOE Patents [OSTI]

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  18. Tribological interaction between polytetrafluoroethylene and silicon oxide surfaces

    SciTech Connect (OSTI)

    Uçar, A.; Çopuro?lu, M.; Suzer, S.; Baykara, M. Z.; Ar?kan, O.

    2014-10-28

    We investigated the tribological interaction between polytetrafluoroethylene (PTFE) and silicon oxide surfaces. A simple rig was designed to bring about a friction between the surfaces via sliding a piece of PTFE on a thermally oxidized silicon wafer specimen. A very mild inclination (?0.5°) along the sliding motion was also employed in order to monitor the tribological interaction in a gradual manner as a function of increasing contact force. Additionally, some patterns were sketched on the silicon oxide surface using the PTFE tip to investigate changes produced in the hydrophobicity of the surface, where the approximate water contact angle was 45° before the transfer. The nature of the transferred materials was characterized by X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). XPS results revealed that PTFE was faithfully transferred onto the silicon oxide surface upon even at the slightest contact and SEM images demonstrated that stable morphological changes could be imparted onto the surface. The minimum apparent contact pressure to realize the PTFE transfer is estimated as 5 kPa, much lower than reported previously. Stability of the patterns imparted towards many chemical washing processes lead us to postulate that the interaction is most likely to be chemical. Contact angle measurements, which were carried out to characterize and monitor the hydrophobicity of the silicon oxide surface, showed that upon PTFE transfer the hydrophobicity of the SiO{sub 2} surface could be significantly enhanced, which might also depend upon the pattern sketched onto the surface. Contact angle values above 100° were obtained.

  19. Silicon Sensors for Trackers at High-Luminosity Environment

    E-Print Network [OSTI]

    Timo Peltola

    2015-03-12

    The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than the one of LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 collaboration "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented.

  20. A micron resolution optical scanner for characterization of silicon detectors

    SciTech Connect (OSTI)

    Shukla, R. A.; Dugad, S. R. Gopal, A. V.; Gupta, S. K.; Prabhu, S. S.; Garde, C. S.

    2014-02-15

    The emergence of high position resolution (?10 ?m) silicon detectors in recent times have highlighted the urgent need for the development of new automated optical scanners of micron level resolution suited for characterizing microscopic features of these detectors. More specifically, for the newly developed silicon photo-multipliers (SiPM) that are compact, possessing excellent photon detection efficiency with gain comparable to photo-multiplier tube. In a short time, since their invention the SiPMs are already being widely used in several high-energy physics and astrophysics experiments as the photon readout element. The SiPM is a high quantum efficiency, multi-pixel photon counting detector with fast timing and high gain. The presence of a wide variety of photo sensitive silicon detectors with high spatial resolution requires their performance evaluation to be carried out by photon beams of very compact spot size. We have designed a high resolution optical scanner that provides a monochromatic focused beam on a target plane. The transverse size of the beam was measured by the knife-edge method to be 1.7 ?m at 1 ? ? level. Since the beam size was an order of magnitude smaller than the typical feature size of silicon detectors, this optical scanner can be used for selective excitation of these detectors. The design and operational details of the optical scanner, high precision programmed movement of target plane (0.1 ?m) integrated with general purpose data acquisition system developed for recording static and transient response photo sensitive silicon detector are reported in this paper. Entire functionality of scanner is validated by using it for selective excitation of individual pixels in a SiPM and identifying response of active and dead regions within SiPM. Results from these studies are presented in this paper.

  1. Lithium Ion Battery Performance of Silicon Nanowires With Carbon Skin

    SciTech Connect (OSTI)

    Bogart, Timothy D.; Oka, Daichi; Lu, Xiaotang; Gu, Meng; Wang, Chong M.; Korgel, Brian A.

    2013-12-06

    Silicon (Si) nanomaterials have emerged as a leading candidate for next generation lithium-ion battery anodes. However, the low electrical conductivity of Si requires the use of conductive additives in the anode film. Here we report a solution-based synthesis of Si nanowires with a conductive carbon skin. Without any conductive additive, the Si nanowire electrodes exhibited capacities of over 2000 mA h g-1 for 100 cycles when cycled at C/10 and over 1200 mA h g-1 when cycled more rapidly at 1C against Li metal.. In situ transmission electron microscopy (TEM) observation reveals that the carbon skin performs dual roles: it speeds lithiation of the Si nanowires significantly, while also constraining the final volume expansion. The present work sheds light on ways to optimize lithium battery performance by smartly tailoring the nanostructure of composition of materials based on silicon and carbon.

  2. First-principles Approaches to Simulate Lithiation in Silicon Electrodes

    E-Print Network [OSTI]

    Zhang, Qianfan; Wang, Enge

    2013-01-01

    Silicon is viewed as an excellent electrode material for lithium batteries due to its high lithium storage capacity. Various Si nano-structures, such as Si nanowires, have performed well as lithium battery anodes and have opened up exciting opportunities for the use of Si in energy storage devices. The mechanism of lithium insertion and the interaction between Li and the Si electrode must be understood at the atomic level; this understanding can be achieved by first-principles simulation. Here, first-principles computations of lithiation in silicon electrodes are reviewed. The review focuses on three aspects: the various properties of bulk Li-Si compounds with different Li concentrations, the electronic structure of Si nanowires and Li insertion behavior in Si nanowires, and the dynamic lithiation process at the Li/Si interface. Potential study directions in this research field and difficulties that the field still faces are discussed at the end.

  3. Sequential lateral solidification of silicon thin films on low-k dielectrics for low temperature integration

    SciTech Connect (OSTI)

    Carta, Fabio Hlaing, Htay; Kymissis, Ioannis; Gates, Stephen M.; Edelstein, Daniel C.; Limanov, Alexander B.; Im, James S.

    2014-12-15

    We present the excimer laser crystallization of amorphous silicon on a low dielectric constant (low-k) insulator for very large scale integration monolithic 3D integration and demonstrate that low dielectric constant materials are suitable substrates for 3D integration through laser crystallization of silicon thin films. We crystallized 100?nm amorphous silicon on top of SiO{sub 2} and SiCOH (low-k) dielectrics, at different material thicknesses (1??m, 0.75??m, and 0.5??m). The amorphous silicon crystallization on low-k dielectric requires 35% less laser energy than on an SiO{sub 2} dielectric. This difference is related to the thermal conductivity of the two materials, in agreement with one dimensional simulations of the crystallization process. We analyzed the morphology of the material through defect-enhanced microscopy, Raman spectroscopy, and X-ray diffraction analysis. SEM micrographs show that polycrystalline silicon is characterized by micron-long grains with an average width of 543?nm for the SiO{sub 2} sample and 570?nm for the low-k samples. Comparison of the Raman spectra does not show any major difference in film quality for the two different dielectrics, and polycrystalline silicon peaks are closely placed around 517?cm{sup ?1}. From X-ray diffraction analysis, the material crystallized on SiO{sub 2} shows a preferential (111) crystal orientation. In the SiCOH case, the 111 peak strength decreases dramatically and samples do not show preferential crystal orientation. A 1D finite element method simulation of the crystallization process on a back end of line structure shows that copper (Cu) damascene interconnects reach a temperature of 70?°C or lower with a 0.5??m dielectric layer between the Cu and the molten Si layer, a favorable condition for monolithic 3D integration.

  4. Anchored nanostructure materials and method of fabrication

    DOE Patents [OSTI]

    Seals, Roland D; Menchhofer, Paul A; Howe, Jane Y; Wang, Wei

    2012-11-27

    Anchored nanostructure materials and methods for their fabrication are described. The anchored nanostructure materials may utilize nano-catalysts that include powder-based or solid-based support materials. The support material may comprise metal, such as NiAl, ceramic, a cermet, or silicon or other metalloid. Typically, nanoparticles are disposed adjacent a surface of the support material. Nanostructures may be formed as anchored to nanoparticles that are adjacent the surface of the support material by heating the nano-catalysts and then exposing the nano-catalysts to an organic vapor. The nanostructures are typically single wall or multi-wall carbon nanotubes.

  5. Defect behavior of polycrystalline solar cell silicon

    SciTech Connect (OSTI)

    Schroder, D.K.; Park, S.H.; Hwang, I.G.; Mohr, J.B.; Hanly, M.P.

    1993-05-01

    The major objective of this study, conducted from October 1988 to September 1991, was to gain an understanding of the behavior of impurities in polycrystalline silicon and the influence of these impurities on solar cell efficiency. The authors studied edge-defined film-fed growth (EFG) and cast poly-Si materials and solar cells. With EFG Si they concentrated on chromium-doped materials and cells to determine the role of Cr on solar cell performance. Cast poly-Si samples were not deliberately contaminated. Samples were characterized by cell efficiency, current-voltage, deep-level transient spectroscopy (DLTS), surface photovoltage (SPV), open-circuit voltage decay, secondary ion mass spectrometry, and Fourier transform infrared spectroscopy measurements. They find that Cr forms Cr-B pairs with boron at room temperature and these pairs dissociate into Cr{sub i}{sup +} and B{sup {minus}} during anneals at 210{degrees}C for 10 min. Following the anneal, Cr-B pairs reform at room temperature with a time constant of 230 h. Chromium forms CrSi{sub 2} precipitates in heavily contaminated regions and they find evidence of CrSi{sub 2} gettering, but a lack of chromium segregation or precipitation to grain boundaries and dislocations. Cr-B pairs have well defined DLTS peaks. However, DLTS spectra of other defects are not well defined, giving broad peaks indicative of defects with a range of energy levels in the band gap. In some high-stress, low-efficiency cast poly-Si they detect SiC precipitates, but not in low-stress, high-efficiency samples. SPV measurements result in nonlinear SPV curves in some materials that are likely due to varying optical absorption coefficients due to locally varying stress in the material.

  6. Amorphous silicon passivated contacts for diffused junction silicon solar cells

    SciTech Connect (OSTI)

    Bullock, J. Yan, D.; Wan, Y.; Cuevas, A.; Demaurex, B.; Hessler-Wyser, A.; De Wolf, S.

    2014-04-28

    Carrier recombination at the metal contacts is a major obstacle in the development of high-performance crystalline silicon homojunction solar cells. To address this issue, we insert thin intrinsic hydrogenated amorphous silicon [a-Si:H(i)] passivating films between the dopant-diffused silicon surface and aluminum contacts. We find that with increasing a-Si:H(i) interlayer thickness (from 0 to 16?nm) the recombination loss at metal-contacted phosphorus (n{sup +}) and boron (p{sup +}) diffused surfaces decreases by factors of ?25 and ?10, respectively. Conversely, the contact resistivity increases in both cases before saturating to still acceptable values of ? 50 m? cm{sup 2} for n{sup +} and ?100 m? cm{sup 2} for p{sup +} surfaces. Carrier transport towards the contacts likely occurs by a combination of carrier tunneling and aluminum spiking through the a-Si:H(i) layer, as supported by scanning transmission electron microscopy–energy dispersive x-ray maps. We explain the superior contact selectivity obtained on n{sup +} surfaces by more favorable band offsets and capture cross section ratios of recombination centers at the c-Si/a-Si:H(i) interface.

  7. Method for making defect-free zone by laser-annealing of doped silicon

    DOE Patents [OSTI]

    Narayan, Jagdish (Knoxville, TN); White, Clark W. (Oak Ridge, TN); Young, Rosa T. (Knoxville, TN)

    1980-01-01

    This invention is a method for improving the electrical properties of silicon semiconductor material. The method comprises irradiating a selected surface layer of the semiconductor material with high-power laser pulses characterized by a special combination of wavelength, energy level, and duration. The combination effects melting of the layer without degrading electrical properties, such as minority-carrier diffusion length. The method is applicable to improving the electrical properties of n- and p-type silicon which is to be doped to form an electrical junction therein. Another important application of the method is the virtually complete removal of doping-induced defects from ion-implanted or diffusion-doped silicon substrates.

  8. The CDF silicon vertex trigger

    SciTech Connect (OSTI)

    B. Ashmanskas; A. Barchiesi; A. Bardi

    2003-06-23

    The CDF experiment's Silicon Vertex Trigger is a system of 150 custom 9U VME boards that reconstructs axial tracks in the CDF silicon strip detector in a 15 {mu}sec pipeline. SVT's 35 {mu}m impact parameter resolution enables CDF's Level 2 trigger to distinguish primary and secondary particles, and hence to collect large samples of hadronic bottom and charm decays. We review some of SVT's key design features. Speed is achieved with custom VLSI pattern recognition, linearized track fitting, pipelining, and parallel processing. Testing and reliability are aided by built-in logic state analysis and test-data sourcing at each board's input and output, a common inter-board data link, and a universal ''Merger'' board for data fan-in/fan-out. Speed and adaptability are enhanced by use of modern FPGAs.

  9. A 2-terminal perovskite/silicon multijunction solar cell enabled by a silicon tunnel junction

    E-Print Network [OSTI]

    Mailoa, Jonathan P.

    With the advent of efficient high-bandgap metal-halide perovskite photovoltaics, an opportunity exists to make perovskite/silicon tandem solar cells. We fabricate a monolithic tandem by developing a silicon-based interband ...

  10. Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation

    E-Print Network [OSTI]

    Weiss, Sharon

    Enhanced room temperature oxidation in silicon and porous silicon under 10 keV x-ray irradiation been suggested that gamma irradiation accelerates oxidation of porous silicon.5 Irradiation silicon samples that occurs over three decades of 10 keV x-ray irradiation. II. SAMPLE PREPARATION Silicon

  11. The ATLAS Silicon Pixel Sensors

    E-Print Network [OSTI]

    Alam, M S; Einsweiler, K F; Emes, J; Gilchriese, M G D; Joshi, A; Kleinfelder, S A; Marchesini, R; McCormack, F; Milgrome, O; Palaio, N; Pengg, F; Richardson, J; Zizka, G; Ackers, M; Andreazza, A; Comes, G; Fischer, P; Keil, M; Klasen, V; Kühl, T; Meuser, S; Ockenfels, W; Raith, B; Treis, J; Wermes, N; Gössling, C; Hügging, F G; Wüstenfeld, J; Wunstorf, R; Barberis, D; Beccherle, R; Darbo, G; Gagliardi, G; Gemme, C; Morettini, P; Musico, P; Osculati, B; Parodi, F; Rossi, L; Blanquart, L; Breugnon, P; Calvet, D; Clemens, J-C; Delpierre, P A; Hallewell, G D; Laugier, D; Mouthuy, T; Rozanov, A; Valin, I; Aleppo, M; Caccia, M; Ragusa, F; Troncon, C; Lutz, Gerhard; Richter, R H; Rohe, T; Brandl, A; Gorfine, G; Hoeferkamp, M; Seidel, SC; Boyd, GR; Skubic, P L; Sícho, P; Tomasek, L; Vrba, V; Holder, M; Ziolkowski, M; D'Auria, S; del Papa, C; Charles, E; Fasching, D; Becks, K H; Lenzen, G; Linder, C

    2001-01-01

    Prototype sensors for the ATLAS silicon pixel detector have been developed. The design of the sensors is guided by the need to operate them in the severe LHC radiation environment at up to several hundred volts while maintaining a good signal-to-noise ratio, small cell size, and minimal multiple scattering. The ability to be operated under full bias for electrical characterization prior to the attachment of the readout integrated circuit electronics is also desired.

  12. Composite materials comprising two jonal functions and methods for making the same

    DOE Patents [OSTI]

    Fareed, Ali Syed (Newark, DE); Garnier, John Edward (Newark, DE); Schiroky, Gerhard Hans (Newark, DE); Kennedy, Christopher Robin (Newark, DE); Sonuparlak, Birol (Longmont, CO)

    2001-01-01

    The present invention generally relates to mechanisms for preventing undesirable oxidation (i.e., oxidation protection mechanisms) in composite bodies. The oxidation protection mechanisms include getterer materials which are added to the composite body which gather or scavenge undesirable oxidants which may enter the composite body. The getterer materials may be placed into at least a portion of the composite body such that any undesirable oxidant approaching, for example, a fiber reinforcement, would be scavenged by (e.g., reacted with) the getterer. The getterer materials) may form at least one compound which acts as a passivation layer, and/or is able to move by bulk transport (e.g., by viscous flow as a glassy material) to a crack, and sealing the crack, thereby further enhancing the oxidation protection of the composite body. One or more ceramic filler materials which serve as reinforcements may have a plurality of super-imposed coatings thereon, at least one of which coatings may function as or contain an oxidation protection mechanism. Specifically, a coating comprising boron nitride which has been engineered or modified to contain some silicon exhibits improved corrosion resistance, specifically to oxygen and moisture. The coated materials may be useful as reinforcing materials in high performance composites to provide improved mechanical properties such as fracture toughness. The present invention also relates to improved composites which incorporate these materials, and to their methods of manufacture.

  13. Process for producing dispersed particulate composite materials

    DOE Patents [OSTI]

    Henager, Jr., Charles H. (Richland, WA); Hirth, John P. (Viola, ID)

    1995-01-01

    This invention is directed to a process for forming noninterwoven dispersed particulate composite products. In one case a composite multi-layer film product comprises a substantially noninterwoven multi-layer film having a plurality of discrete layers. This noninterwoven film comprises at least one discrete layer of a first material and at least one discrete layer of a second material. In another case the first and second materials are blended together with each other. In either case, the first material comprises a metalloid and the second material a metal compound. At least one component of a first material in one discrete layer undergoes a solid state displacement reaction with at least one component of a second material thereby producing the requisite noninterwoven composite film product. Preferably, the first material comprises silicon, the second material comprises Mo.sub.2 C, the third material comprises SiC and the fourth material comprises MoSi.sub.2.

  14. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on claims shall be paid at the rate established by the Secretary of the Treasury of the United States pursuant to Public Law 92-41 (85 Stat. 97). GC-37 BANKRUPTCY (Jun 2009) In...

  15. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr.Theories (Journal Article)Clean CitiesTimTime1,

  16. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr.Theories (Journal Article)Clean CitiesTimTime1,2,

  17. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr.Theories (Journal Article)Clean

  18. Time and Materials Exhibit A General Conditions

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power AdministrationRobust,Field-effectWorking With U.S.Week DayDr.Theories (Journal Article)Clean4, 9/26/14) Exhibit

  19. Interior phase transformations and mass-radius relationships of silicon-carbon planets

    SciTech Connect (OSTI)

    Wilson, Hugh F. [CSIRO Materials Science and Engineering, Parkville, Victoria 3052 (Australia); Militzer, Burkhard, E-mail: hughfw@gmail.com [Department of Earth and Planetary Science and Department of Astronomy, University of California, Berkeley, CA 94720 (United States)

    2014-09-20

    Planets such as 55 Cancri e orbiting stars with a high carbon-to-oxygen ratio may consist primarily of silicon and carbon, with successive layers of carbon, silicon carbide, and iron. The behavior of silicon-carbon materials at the extreme pressures prevalent in planetary interiors, however, has not yet been sufficiently understood. In this work, we use simulations based on density functional theory to determine high-pressure phase transitions in the silicon-carbon system, including the prediction of new stable compounds with Si{sub 2}C and SiC{sub 2} stoichiometry at high pressures. We compute equations of state for these silicon-carbon compounds as a function of pressure, and hence derive interior structural models and mass-radius relationships for planets composed of silicon and carbon. Notably, we predict a substantially smaller radius for SiC planets than in previous models, and find that mass radius relationships for SiC planets are indistinguishable from those of silicate planets. We also compute a new equation of state for iron. We rederive interior models for 55 Cancri e and are able to place more stringent restrictions on its composition.

  20. Method for fabricating pixelated silicon device cells

    DOE Patents [OSTI]

    Nielson, Gregory N.; Okandan, Murat; Cruz-Campa, Jose Luis; Nelson, Jeffrey S.; Anderson, Benjamin John

    2015-08-18

    A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps.

  1. Diamond-silicon carbide composite and method

    DOE Patents [OSTI]

    Zhao, Yusheng (Los Alamos, NM)

    2011-06-14

    Uniformly dense, diamond-silicon carbide composites having high hardness, high fracture toughness, and high thermal stability are prepared by consolidating a powder mixture of diamond and amorphous silicon. A composite made at 5 GPa/1673K had a measured fracture toughness of 12 MPam.sup.1/2. By contrast, liquid infiltration of silicon into diamond powder at 5 GPa/1673K produces a composite with higher hardness but lower fracture toughness.

  2. Study of plasma enhanced chemical vapor deposition of boron-doped hydrogenated amorphous silicon thin films and the application to p-channel thin film transistor 

    E-Print Network [OSTI]

    Nominanda, Helinda

    2004-01-01

    The material and process characteristics of boron doped hydrogenated amorphous silicon (a-Si:H) thin film deposited by plasma enhanced chemical vapor deposition technique (PECVD) have been studied. The goal is to apply the high quality films...

  3. NMR Study of the Synthesis of Alkyl-Terminated Silicon Nanoparticles from the Reaction of SiCl4 with the Zintl

    E-Print Network [OSTI]

    Augustine, Mathew P.

    *, Departments of Chemistry and Chemical Engineering and Material Science, One Shields Ave, University The synthesis of silicon nanoclusters and their characterization by multinuclear solid- state nuclear magnetic,7 have been developed. Recently, in our laboratory we accomplished an alternative solution

  4. Investigation of porous alumina as a self-assembled diffractive element to facilitate light trapping in thin film silicon solar cells

    E-Print Network [OSTI]

    Coronel, Naomi (Naomi Cristina)

    2009-01-01

    Thin film solar cells are currently being investigated as an affordable alternative energy source because of the reduced material cost. However, these devices suffer from low efficiencies, compared to silicon wafer solar ...

  5. Structural alloy with a protective coating containing silicon or silicon-oxide

    DOE Patents [OSTI]

    Natesan, K.

    1992-01-01

    This invention is comprised of an iron-based alloy containing chromium and optionally, nickel. The alloy has a surface barrier of silicon or silicon plus oxygen which converts at high temperature to a protective silicon compound. The alloy can be used in oxygen-sulfur mixed gases at temperatures up to about 1100{degrees}C.

  6. Toward accurate and large-scale silicon photonics

    E-Print Network [OSTI]

    Sun, Jie, Ph.D. Massachusetts Institute of Technology

    2013-01-01

    Silicon photonics, emerging from the interface of silicon technology and photonic technology, is expected to inherit the incredible integration ability of silicon technology that has boomed the microelectronic industry for ...

  7. THE STRUCTURE OF ULTRA-THIN OXIDE ON SILICON

    E-Print Network [OSTI]

    Krivanek, Ondrej L.

    2012-01-01

    Ultra-thin (10-lOOA) silicon oxide layers on silicon are ofcrystalline silicon. The oxide layer is seen to be sharplyundulation of the whole oxide layer with ~300A wavelength.

  8. Efficient light trapping structure in thin film silicon solar cells

    E-Print Network [OSTI]

    Sheng, Xing

    Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

  9. Dongqi Leshan Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA Jump to:of the National Climate ChangeDongjiangZhexiangDongqi Leshan

  10. Huachang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EA JumpDuimen RiverScoring Tool Jump to:EthanolHua an Xipi

  11. Jiangxi Jiahua Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar2-0057-EAInvervar Hydro Jump to:Huilun Solar TechnologyAvon New Energy

  12. TBEA Xinjiang Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop Inc JumpHeter BatterySolarfinMarketMemberI P Rural Electric Coop Jump to:TBEA

  13. Anhui Tiansheng Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmental Jump to:EAandAmminex A S Jump to:Angola on the Lake, New York:Paiya Solar

  14. Zhongsheng Semiconductor Silicon Material Co Ltd | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoop IncIowa (UtilityMichigan) JumpZhuyuanWindey WindZhongda

  15. Apparatus for obtaining silicon from fluosilicic acid

    DOE Patents [OSTI]

    Sanjurjo, Angel (San Jose, CA)

    1986-05-20

    Apparatus for producing low cost, high purity solar grade silicon ingots in single crystal or quasi single crystal ingot form in a substantially continuous operation in a two stage reactor starting with sodium fluosilicate and a metal more electropositive than silicon (preferably sodium) in separate compartments having easy vapor transport therebetween and thermally decomposing the sodium fluosilicate to cause formation of substantially pure silicon and a metal fluoride which may be continuously separated in the melt and silicon may be directly and continuously cast from the melt.

  16. ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS

    E-Print Network [OSTI]

    ULTRATHIN FLEXIBLE CRYSTALLINE SILICON: MICROSYSTEMS ENABLED PHOTOVOLTAICS Jose L. Cruz Photovoltaics (MEPV) is a technique to create solar cells relying on tools from the microsystems and integrated

  17. Engineering Metal Impurities in Multicrystalline Silicon Solar...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Metal Impurities in Multicrystalline Silicon Solar Cells Print Transition metals are one of the main culprits in degrading the efficiency of multicrystalline solar...

  18. Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon...

    Office of Scientific and Technical Information (OSTI)

    Hydrogenation of Dislocation-Limited Heteroepitaxial Silicon Solar Cells: Preprint Bolen, M. L.; Grover, S.; Teplin, C. W.; Bobela, D.; Branz, H. M.; Stradins, P. 08 HYDROGEN; 14...

  19. Process for Polycrystalline film silicon growth

    DOE Patents [OSTI]

    Wang, Tihu (Littleton, CO); Ciszek, Theodore F. (Evergreen, CO)

    2001-01-01

    A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.

  20. Protein separations using porous silicon membranes 

    E-Print Network [OSTI]

    Pass, Shannon Marie

    1992-01-01

    ) 61 IX LIST OF TABLES 1. The L9 Orthogonal Array 34 2. Experimental Factors and Levels . 3. Results of Silicon Etching Trials . 35 40 4. Results of Silicon Membrane Separation Experiments 44 5. Results of Single Solute Experiments Using... charge or as the absence of an electron in the crystal structure of silicon. The properties of boron doped siTicon are exploited experimentally by setting up an etch cell in which one surface of the silicon serves as the anode and by using...

  1. Solar cell with silicon oxynitride dielectric layer

    DOE Patents [OSTI]

    Shepherd, Michael; Smith, David D

    2015-04-28

    Solar cells with silicon oxynitride dielectric layers and methods of forming silicon oxynitride dielectric layers for solar cell fabrication are described. For example, an emitter region of a solar cell includes a portion of a substrate having a back surface opposite a light receiving surface. A silicon oxynitride (SiO.sub.xN.sub.y, 0silicon oxynitride dielectric layer.

  2. Enabling Thin Silicon Solar Cell Technology

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely...

  3. Synthesis and tribological behavior of silicon oxycarbonitride...

    Office of Scientific and Technical Information (OSTI)

    Article: Synthesis and tribological behavior of silicon oxycarbonitride thin films derived from poly(urea)methyl vinyl silazane. Citation Details In-Document Search Title:...

  4. Carbon for electronics Electronics, as we know is based on silicon, and on metals like copper. One may ask why

    E-Print Network [OSTI]

    Gruner, George

    and a semiconductor, and nano-scale forms of the material can be made to resemble a metal, such as copper and a semiconductor such a silicon. The materials are based on carbon, and ­ in contrast to polymers ­ carbon alone common form of carbon, graphite is a semimetal, it's electronic properties lie between a metal

  5. Interaction of nucleobases with silicon nanowires: A first-principles study Xiaoliang Zhong a

    E-Print Network [OSTI]

    Pandey, Ravi

    Interaction of nucleobases with silicon nanowires: A first-principles study Xiaoliang Zhong the synthesis process [1,3,4], making them an attractive host material for the next generation of sensing to variation of surface electric potential [9­11]. This scheme enables sensing applications of SiNW based field

  6. A Compact Hybrid Silicon/Electro-Optic Polymer Resonant Cavity Modulator Design

    E-Print Network [OSTI]

    Dunham, Scott

    . The high operating frequency and complex nature of the structure lead to a need for full 3D simulations silicon/electro-optic polymer slot waveguide structure is presented in this work. The device utilizes the electro-optic polymer in the cavity region to provide an active material for modulation and includes

  7. Atomistic insights into Li-ion diffusion in amorphous silicon , Afif Gouissem a

    E-Print Network [OSTI]

    Sharma, Pradeep

    are a critical part of the future energy storage needs in a broad range of applica- tions: portable electronics is currently focused on understanding the basic materials science underscoring these energy storage devicesAtomistic insights into Li-ion diffusion in amorphous silicon Xin Yan a , Afif Gouissem a , Pradeep

  8. Light-Weight Free-Standing Carbon Nanotube-Silicon Films for Anodes of

    E-Print Network [OSTI]

    Cui, Yi

    of their high energy and power density, lithium ion batteries that were mainly used for portable electronics- prove energy densities for both anode and cathode. Silicon as an anode material has at- tracted collector on the anode side is usu- ally a 10 m thick copper sheet with an ar- eal density 10 mg/cm2

  9. EVALUATION OF MECHANICAL RELIABILITY OF SILICON NITRIDE VANES AFTER FIELD TESTS IN AN INDUSTRIAL GAS TURBINE

    E-Print Network [OSTI]

    Pennycook, Steve

    GAS TURBINE H.-T. Lin and M. K. Ferber Metals and Ceramics Division Oak Ridge National Laboratory Oak field tests in an industrial gas turbine. Two commercially available silicon nitride vanes (i.e., AS800- temperature structural components in advanced gas turbines [1-5]. These materials offer the advantages of (1

  10. Examining Solid Electrolyte Interphase Formation on Crystalline Silicon Electrodes: In uence of Electrochemical Preparation and

    E-Print Network [OSTI]

    Webb, Lauren J.

    as an anode material for lithium- ion batteries due to its large volumetric and gravimetric energy density (9 electrolyte interphase (SEI) under applied potential, which hampers silicon's performance as a lithium-ion the cell and hindering lithium-ion transfer kinetics. Identi cation of the chemical composition

  11. Lithium aluminum/iron sulfide battery having lithium aluminum and silicon as negative electrode

    DOE Patents [OSTI]

    Gilbert, Marian (Flossmoor, IL); Kaun, Thomas D. (New Lenox, IL)

    1984-01-01

    A method of making a negative electrode, the electrode made thereby and a secondary electrochemical cell using the electrode. Silicon powder is mixed with powdered electroactive material, such as the lithium-aluminum eutectic, to provide an improved electrode and cell.

  12. Silicon epitaxy below 200C: Towards thin crystalline solar cells R. Carioua,b

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . However material still represent more than 40% of the cost of c-Si PV Thin Film Solar Technology IV-Si) technology. Indeed, the learning curve of c-Si solar cells has reached a plateau since 1999 with the 25Silicon epitaxy below 200°C: Towards thin crystalline solar cells R. Carioua,b , R. Ruggeria,c , P

  13. The stress assisted evolution of point and extended defects in silicon Samir Chaudhrya)

    E-Print Network [OSTI]

    Florida, University of

    The stress assisted evolution of point and extended defects in silicon Samir Chaudhrya) and Mark E to sub-micron dimensions, they are becoming more complex in geometry and materials. Stress related of stress can cause severe degradation of device characteristics by generating and propagating dislocations

  14. Amorphous silicon research. Annual subcontract report, October 1, 1994--September 30, 1995

    SciTech Connect (OSTI)

    Arya, R.R.; Bennett, M.; Bradley, D.

    1996-02-01

    The major effort in this program is to develop cost-effective processes which satisfy efficiency, yield, and material usage criteria for mass production of amorphous silicon-based multijunction modules. New and improved processes were developed for the component cells and a more robust rear contact was developed for better long term stability.

  15. Measurements of thermal transport in low stress silicon nitride films W. Holmes,a)

    E-Print Network [OSTI]

    Richards, Paul L.

    Measurements of thermal transport in low stress silicon nitride films W. Holmes,a) J. M. Gildemeister, and P. L. Richardsb) Physics Department, University of California, Berkeley, California 94720 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 V. Kotsuboc

  16. Spin-On Organic Polymer Dopants for Silicon Megan L. Hoarfrost,

    E-Print Network [OSTI]

    Javey, Ali

    Conversion and Storage; Energy and Charge Transport The semiconductor industry demands silicon restrictive as semiconductor electronic devices are scaled to nanometer dimensions.1,2,6-10 Furthermore, ion implantation is incompatible with nonplanar, nanostructured materials because the energetic ions have

  17. Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight-Binding Model

    E-Print Network [OSTI]

    1 Analysis of Thermoelectric Properties of Scaled Silicon Nanowires Using an Atomistic Tight Abstract Low dimensional materials provide the possibility of improved thermoelectric performance due. As a result of suppressed phonon conduction, large improvements on the thermoelectric figure of merit, ZT

  18. Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

    SciTech Connect (OSTI)

    Mouro, J.; Gualdino, A.; Chu, V. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Conde, J. P. [Instituto de Engenharia de Sistemas e Computadores – Microsistemas e Nanotecnologias (INESC-MN) and IN – Institute of Nanoscience and Nanotechnology, 1000-029 Lisbon (Portugal); Department of Bioengineering, Instituto Superior Técnico (IST), 1049-001 Lisbon (Portugal)

    2013-11-14

    Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

  19. Designing Silicon Nanostructures for High Energy Lithium Ion...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes Designing Silicon Nanostructures for High Energy Lithium Ion Battery Anodes 2012 DOE Hydrogen and Fuel...

  20. Low-temperature plasma-deposited silicon epitaxial films: Growth...

    Office of Scientific and Technical Information (OSTI)

    Low-temperature plasma-deposited silicon epitaxial films: Growth and properties Citation Details In-Document Search Title: Low-temperature plasma-deposited silicon epitaxial films:...

  1. Predicting fracture in micron-scale polycrystalline silicon MEMS...

    Office of Scientific and Technical Information (OSTI)

    Predicting fracture in micron-scale polycrystalline silicon MEMS structures. Citation Details In-Document Search Title: Predicting fracture in micron-scale polycrystalline silicon...

  2. Silicon Nanostructure-based Technology for Next Generation Energy...

    Office of Environmental Management (EM)

    Silicon Nanostructure-based Technology for Next Generation Energy Storage Silicon Nanostructure-based Technology for Next Generation Energy Storage 2013 DOE Hydrogen and Fuel Cells...

  3. Pore Collapse and Regrowth in Silicon Electrodes for Rechargeable...

    Office of Scientific and Technical Information (OSTI)

    Pore Collapse and Regrowth in Silicon Electrodes for Rechargeable Batteries Citation Details In-Document Search Title: Pore Collapse and Regrowth in Silicon Electrodes for...

  4. Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure...

    Office of Environmental Management (EM)

    2: Silicon Nanostructure-based Technology for Next Generation Energy Storage Vehicle Technologies Office Merit Review 2012: Silicon Nanostructure-based Technology for Next...

  5. Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang...

    Open Energy Info (EERE)

    Guiyang Polysource Silicon Co Ltd Formerly Jiayuan Sunshine Guiyang Hi New Sunshine Technology Jump to: navigation, search Name: Guiyang Polysource Silicon Co Ltd (Formerly Jiayuan...

  6. Design and Implementation of Silicon Nitride Valves for Heavy...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Design and Implementation of Silicon Nitride Valves for Heavy Duty Diesel Engines Poster presentation at the...

  7. Project Profile: Hybrid Organic Silicone HTF Utilizing Endothermic...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Hybrid Organic Silicone HTF Utilizing Endothermic Chemical Reactions for Latent Heat Storage Project Profile: Hybrid Organic Silicone HTF Utilizing Endothermic Chemical Reactions...

  8. Lithium-drifted silicon detector with segmented contacts

    DOE Patents [OSTI]

    Tindall, Craig S.; Luke, Paul N.

    2006-06-13

    A method and apparatus for creating both segmented and unsegmented radiation detectors which can operate at room temperature. The devices include a metal contact layer, and an n-type blocking contact formed from a thin layer of amorphous semiconductor. In one embodiment the material beneath the n-type contact is n-type material, such as lithium compensated silicon that forms the active region of the device. The active layer has been compensated to a degree at which the device may be fully depleted at low bias voltages. A p-type blocking contact layer, or a p-type donor material can be formed beneath a second metal contact layer to complete the device structure. When the contacts to the device are segmented, the device is capable of position sensitive detection and spectroscopy of ionizing radiation, such as photons, electrons, and ions.

  9. Research on stable, high-efficiency amorphous silicon multijunction modules

    SciTech Connect (OSTI)

    Ghosh, M.; DelCueto, J.: Kampas, F.; Xi, J. )

    1993-02-01

    This report describes results from the first phase of a three-phase contract for the development of stable, high-efficiency, same-band-gap, amorphous silicon (a-Si) multijunction photovoltaic (PV) modules. The program involved improving the properties of individual layers of semiconductor and non-semiconductor materials and small-area single-junction and multijunction devices, as well as the multijunction modules. The semiconductor materials research was performed on a-Si p, i, and n layers, and on microcrystalline silicon n layers. These were deposited using plasma-enhanced chemical vapor deposition. The non-semiconductor materials studied were tin oxide, for use as a transparent-conducting-oxide (TCO), and zinc oxide, for use as a back reflector and as a buffer layer between the TCO and the semiconductor layers. Tin oxide was deposited using atmospheric-pressure chemical vapor deposition. Zinc oxide was deposited using magnetron sputtering. The research indicated that the major challenge in the fabrication of a-Si multijunction PV modules is the contact between the two p-i-n cells. A structure that has low optical absorption but that also facilitates the recombination of electrons from the first p-i-n structure with holes from the second p-i-n structure is required. Non-semiconductor layers and a-Si semiconductor layers were tested without achieving the desired result.

  10. Inorganic arrangement crystal beryllium, lithium, selenium and silicon

    E-Print Network [OSTI]

    Gobato, Ricardo; Fedrigo, Desire Francine Gobato

    2015-01-01

    The use of inorganic crystals technology has been widely date. Since quartz crystals for watches in the nineteenth century, and common way radio in the early twentieth century, to computer chips with new semiconductor materials. Chemical elements such as beryllium, lithium, selenium and silicon, are widely used in technology. The development of new crystals arising from that arrangement can bring technological advances in several areas of knowledge. The likely difficulty of finding such crystals in nature or synthesized, suggest an advanced study of the subject. A study using computer programs with ab initio method was applied. As a result of the likely molecular structure of the arrangement of a crystal was obtained.

  11. III-V Growth on Silicon Toward a Multijunction Cell

    SciTech Connect (OSTI)

    Geisz, J.; Olson, J.; McMahon, W.; Friedman, D.; Kibbler, A.; Kramer, C.; Young, M.; Duda, A.; Ward, S.; Ptak, A.; Kurtz, S.; Wanlass, M.; Ahrenkiel, P.; Jiang, C. S.; Moutinho, H.; Norman, A.; Jones, K.; Romero, M.; Reedy, B.

    2005-11-01

    A III-V on Si multijunction solar cell promises high efficiency at relatively low cost. The challenges to epitaxial growth of high-quality III-Vs on Si, though, are extensive. Lattice-matched (LM) dilute-nitride GaNPAs solar cells have been grown on Si, but their performance is limited by defects related to the nitrogen. Advances in the growth of lattice-mismatched (LMM) materials make more traditional III-Vs, such as GaInP and GaAsP, very attractive for use in multijunction solar cells on silicon.

  12. Amorphous silicon carbide passivating layers for crystalline-silicon-based heterojunction solar cells

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Boccard, Mathieu; Holman, Zachary C.

    2015-08-14

    With this study, amorphous silicon enables the fabrication of very high-efficiency crystalline-silicon-based solar cells due to its combination of excellent passivation of the crystalline silicon surface and permeability to electrical charges. Yet, amongst other limitations, the passivation it provides degrades upon high-temperature processes, limiting possible post-deposition fabrication possibilities (e.g., forcing the use of low-temperature silver pastes). We investigate the potential use of intrinsic amorphous silicon carbide passivating layers to sidestep this issue. The passivation obtained using device-relevant stacks of intrinsic amorphous silicon carbide with various carbon contents and doped amorphous silicon are evaluated, and their stability upon annealing assessed, amorphousmore »silicon carbide being shown to surpass amorphous silicon for temperatures above 300°C. We demonstrate open-circuit voltage values over 700 mV for complete cells, and an improved temperature stability for the open-circuit voltage. Transport of electrons and holes across the hetero-interface is studied with complete cells having amorphous silicon carbide either on the hole-extracting side or on the electron-extracting side, and a better transport of holes than of electrons is shown. Also, due to slightly improved transparency, complete solar cells using an amorphous silicon carbide passivation layer on the hole-collecting side are demonstrated to show slightly better performances even prior to annealing than obtained with a standard amorphous silicon layer.« less

  13. Visualization and Analysis-Oriented Reconstruction of Material Interfaces

    E-Print Network [OSTI]

    Childs, Henry R.

    2011-01-01

    Discrete Multi-Material Interface Reconstruction for VolumeConstructing material interfaces from data sets with volume-M. Multi-material interface reconstruction on generalized

  14. Synthesis and characterization of inorganic silicon oxycarbide glass thin films by reactive rf-magnetron sputtering

    SciTech Connect (OSTI)

    Ryan, Joseph V.; Pantano, C. G.

    2007-01-03

    Silicon oxycarbide glasses have been of interest because of the potential range of properties they might exhibit through a change in carbon-to-oxygen ratio. They are metastable materials and, as such, their structures and properties are very dependent upon the synthesis method. Silicon oxycarbide bonding has been seen in materials made by melting, oxidation, polycarbosilane or sol/gel pyrolysis, and chemical vapor deposition. In this work, the radio-frequency reactive sputtering of silicon carbide targets was explored for synthesis of amorphous silicon oxycarbide thin films. SiO (2?2x) Cx films, with a continuous range of compositions where 0silicon oxycarbide bonding comprises 55%-95% of the material structure. These sputter-deposited materials were also found to have significantly less free carbon as compared to those produced by other methods. Thus, the unique properties for these novel oxycarbide materials can now be established.

  15. Designing Small Silicon Quantum Dots with Low Reorganization Energy

    E-Print Network [OSTI]

    Zang, Xiaoning

    2015-01-01

    A first principles, excited state analysis is carried out to identify ways of producing silicon quantum dots with low excitonic reorganization energy. These focus on the general strategy of either reducing or constraining exciton-phonon coupling, and four approaches are explored. The results can be implemented in quantum dot solids to mitigate polaronic effects and increase the lifetime of coherent excitonic superpositions. It is demonstrated that such designs can also be used to alter the shape of the spectral density for reorganization so as to reduce the rates of both decoherence and dissipation. The results suggest that it may be possible to design quantum dot solids that support partially coherent exciton transport.

  16. Analog Optical Computing Primitives in Silicon Photonics

    E-Print Network [OSTI]

    Jiang, Yunshan; Jalali, Bahram

    2015-01-01

    Optical computing accelerators may help alleviate bandwidth and power consumption bottlenecks in electronics. We show an approach to implementing logarithmic-type analog co-processors in silicon photonics and use it to perform the exponentiation operation. The function is realized by exploiting nonlinear-absorption-enhanced Raman amplification saturation in a silicon waveguide.

  17. Buckeye Silicon | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION JEnvironmentalBowerbank, Maine: EnergyEnergyOhio: Energy ResourcesSilicon BeSi Jump to:

  18. Porcelain enamel neutron absorbing material

    DOE Patents [OSTI]

    Iverson, D.C.

    1987-11-20

    A porcelain enamel composition as a neutron absorbing material can be prepared of a major proportion by weight of a cadmium compound and a minor proportion of compound of boron, lithium and silicon. These compounds in the form of a porcelain enamel coating or layer on several alloys has been found to be particularly effective in enhancing the nuclear safety of equipment for use in the processing and storage of fissile material. The composition of the porcelain enamel coating can be tailored to match the coefficient of thermal expansion of the equipment to be coated and excellent coating adhesion can be achieved. 2 figs.

  19. Porcelain enamel neutron absorbing material

    DOE Patents [OSTI]

    Iverson, Daniel C. (Aiken, SC)

    1990-01-01

    A porcelain enamel composition as a neutron absorbing material can be prepared of a major proportion by weight of a cadmium compound and a minor proportion of compounds of boron, lithium and silicon. These compounds in the form of a porcelain enamel coating or layer on several alloys has been found to be particularly effective in enhancing the nuclear safety of equipment for use in the processing and storage of fissile material. The composition of the porcelain enamel coating can be tailored to match the coefficient of thermal expansion of the equipment to be coated and excellent coating adhesion can be achieved.

  20. Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

    SciTech Connect (OSTI)

    ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

    2000-05-01

    The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

  1. Micro benchtop optics by bulk silicon micromachining

    DOE Patents [OSTI]

    Lee, Abraham P. (Walnut Creek, CA); Pocha, Michael D. (Livermore, CA); McConaghy, Charles F. (Livermore, CA); Deri, Robert J. (Pleasanton, CA)

    2000-01-01

    Micromachining of bulk silicon utilizing the parallel etching characteristics of bulk silicon and integrating the parallel etch planes of silicon with silicon wafer bonding and impurity doping, enables the fabrication of on-chip optics with in situ aligned etched grooves for optical fibers, micro-lenses, photodiodes, and laser diodes. Other optical components that can be microfabricated and integrated include semi-transparent beam splitters, micro-optical scanners, pinholes, optical gratings, micro-optical filters, etc. Micromachining of bulk silicon utilizing the parallel etching characteristics thereof can be utilized to develop miniaturization of bio-instrumentation such as wavelength monitoring by fluorescence spectrometers, and other miniaturized optical systems such as Fabry-Perot interferometry for filtering of wavelengths, tunable cavity lasers, micro-holography modules, and wavelength splitters for optical communication systems.

  2. Compensated amorphous-silicon solar cell

    DOE Patents [OSTI]

    Devaud, G.

    1982-06-21

    An amorphous silicon solar cell including an electrically conductive substrate, a layer of glow discharge deposited hydrogenated amorphous silicon having regions of differing conductivity with at least one region of intrinsic hydrogenated amorphous silicon. The layer of hydrogenated amorphous silicon has opposed first and second major surfaces where the first major surface contacts the elecrically conductive substrate and an electrode for electrically contacting the second major surface. The intrinsic hydrogenated amorphous silicon region is deposited in a glow discharge with an atmosphere which includes not less than about 0.02 atom percent mono-atomic boron. An improved N.I.P. solar cell is disclosed using a BF/sub 3/ doped intrinsic layer.

  3. Fabricating solar cells with silicon nanoparticles

    DOE Patents [OSTI]

    Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

    2014-09-02

    A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

  4. Material Misfits

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Issues submit Material Misfits How well nanocomposite materials align at their interfaces determines what properties they have, opening broad new avenues of materials-science...

  5. General Engineer

    Broader source: Energy.gov [DOE]

    This position may be located in either the Office of Energy Statistics or the Office of Energy Analysis of EIA. This position is established to provide a professional general engineer to perform...

  6. On silicon group elements ejected by supernovae type IA

    SciTech Connect (OSTI)

    De, Soma; Timmes, F. X. [School of Earth and Space Exploration, Arizona State University, Tempe, AZ (United States); Brown, Edward F. [Joint Institute for Nuclear Astrophysics, University of Notre Dame, IN 46556 (United States); Calder, Alan C. [Department of Physics and Astronomy, Stony Brook University, Stony Brook, NY (United States); Townsley, Dean M. [Department of Physics and Astronomy, The University of Alabama, Tuscaloosa, AL (United States); Athanassiadou, Themis [Swiss National Supercomputing Centre, Via Trevano 131, 6900 Lugano (Switzerland); Chamulak, David A. [Physics Division, Argonne National Laboratory, Argonne, IL (United States); Hawley, Wendy [Laboratoire d'Astrophysique de Marseille, Marseille cedex 13 F-13388 (France); Jack, Dennis, E-mail: somad@asu.edu [Departamento de Astronomía, Universidad de Guanajuato, Apartado Postal 144, 36000 Guanajuato (Mexico)

    2014-06-01

    There is evidence that the peak brightness of a Type Ia supernova is affected by the electron fraction Y {sub e} at the time of the explosion. The electron fraction is set by the aboriginal composition of the white dwarf and the reactions that occur during the pre-explosive convective burning. To date, determining the makeup of the white dwarf progenitor has relied on indirect proxies, such as the average metallicity of the host stellar population. In this paper, we present analytical calculations supporting the idea that the electron fraction of the progenitor systematically influences the nucleosynthesis of silicon group ejecta in Type Ia supernovae. In particular, we suggest the abundances generated in quasi-nuclear statistical equilibrium are preserved during the subsequent freeze-out. This allows potential recovery of Y {sub e} at explosion from the abundances recovered from an observed spectra. We show that measurement of {sup 28}Si, {sup 32}S, {sup 40}Ca, and {sup 54}Fe abundances can be used to construct Y {sub e} in the silicon-rich regions of the supernovae. If these four abundances are determined exactly, they are sufficient to recover Y {sub e} to 6%. This is because these isotopes dominate the composition of silicon-rich material and iron-rich material in quasi-nuclear statistical equilibrium. Analytical analysis shows the {sup 28}Si abundance is insensitive to Y {sub e}, the {sup 32}S abundance has a nearly linear trend with Y {sub e}, and the {sup 40}Ca abundance has a nearly quadratic trend with Y {sub e}. We verify these trends with post-processing of one-dimensional models and show that these trends are reflected in the model's synthetic spectra.

  7. General Information

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)ForthcomingGENERALProblemsGeneral Information General

  8. Correlation between radiation processes in silicon and long-time degradation of detectors for high energy physics experiments

    E-Print Network [OSTI]

    Sorina Lazanu; Ionel Lazanu

    2006-11-20

    In this contribution, the correlation between fundamental interaction processes induced by radiation in silicon and observable effects which limit the use of silicon detectors in high energy physics experiments is investigated in the frame of a phenomenological model which includes: generation of primary defects at irradiation starting from elementary interactions in silicon; kinetics of defects, effects at the p-n junction detector level. The effects due to irradiating particles (pions, protons, neutrons), to their flux, to the anisotropy of the threshold energy in silicon, to the impurity concentrations and resistivity of the starting material are investigated as time, fluence and temperature dependences of detector characteristics. The expected degradation of the electrical parameters of detectors in the complex hadron background fields at LHC & SLHC are predicted.

  9. Mechanical Research and Development of monocrystalline silicon neutron beam window for CSNS

    E-Print Network [OSTI]

    Zhou Liang; Qu Hua-Min

    2014-11-24

    The monocrystalline silicon neutron beam window is one of the key components of neutron spectrometers and thin circular plate.Monocrystalline silicon is a brittle material and its strength is not constant but is consistent with the Weibull distribution. The window is designed not simply through the average strength, but according to the survival rate. Bending deformation is the main form of the window, so dangerous parts of the neutron beam window is stress-linearized to the combination of membrane stress and bending stress. According to the Weibull distribution of bending strength of monocrystalline silicon based on a large number of experimental data, finally the optimized neutron beam window is 1.5mm thick. Its survival rate is 0.9994 and its transmittance is 0.98447; it meets both physical requirements and the mechanical strength.

  10. Room-temperature near-infrared silicon carbide nanocrystalline emitters based on optically aligned spin defects

    SciTech Connect (OSTI)

    Muzha, A.; Fuchs, F.; Simin, D.; Astakhov, G. V.; Tarakina, N. V.; Trupke, M.; Soltamov, V. A.; Mokhov, E. N.; Baranov, P. G.; Dyakonov, V.; and others

    2014-12-15

    Bulk silicon carbide (SiC) is a very promising material system for bio-applications and quantum sensing. However, its optical activity lies beyond the near infrared spectral window for in-vivo imaging and fiber communications due to a large forbidden energy gap. Here, we report the fabrication of SiC nanocrystals and isolation of different nanocrystal fractions ranged from 600?nm down to 60?nm in size. The structural analysis reveals further fragmentation of the smallest nanocrystals into ca. 10-nm-size clusters of high crystalline quality, separated by amorphization areas. We use neutron irradiation to create silicon vacancies, demonstrating near infrared photoluminescence. Finally, we detect room-temperature spin resonances of these silicon vacancies hosted in SiC nanocrystals. This opens intriguing perspectives to use them not only as in-vivo luminescent markers but also as magnetic field and temperature sensors, allowing for monitoring various physical, chemical, and biological processes.

  11. Anisotropy and crystal orientation of silicon--application to the modeling of a bent mirror

    SciTech Connect (OSTI)

    Zhang Lin

    2010-06-23

    Matrix formula and MATLAB algorithm are proposed to calculate the stiffness coefficient matrix C, the Young's modulus, shear modulus and Poisson ratio for the silicon crystal in any orientation. Results for Si(110) and Si(311) are given as an example. The anisotropic material properties of the silicon have been used in the mirror width profile optimization for the nano-imaging end-station ID22NI at the ESRF. As the Si(110) is used as the substrate of this multilayer coated KB mirror, the silicon crystal axis [0 0 1] is proposed to orient to the mirror axis. This is the case to have low stress in the mirror and low bending forces from actuators.

  12. Laser shock ignition of porous silicon based nano-energetic films

    SciTech Connect (OSTI)

    Plummer, A.; Gascooke, J.; Shapter, J. [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Kuznetsov, V. A., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [School of Chemical and Physical Sciences, Flinders University, 5042, Bedford Park (Australia); Centre of Expertise in Energetic Materials (CEEM), Bedford Park (Australia); Weapons and Combat Systems Division, Defence Science and Technology Organisation, Edinburgh 5111 (Australia); Voelcker, N. H., E-mail: nico.voelcker@unisa.edu.au, E-mail: Valerian.Kuznetsov@dsto.defence.gov.au [Mawson Institute, University of South Australia, 5095, Mawson Lakes (Australia)

    2014-08-07

    Nanoporous silicon films on a silicon wafer were loaded with sodium perchlorate and initiated using illumination with infrared laser pulses to cause laser thermal ignition and laser-generated shock waves. Using Photon Doppler Velocimetry, it was determined that these waves are weak stress waves with a threshold intensity of 131?MPa in the silicon substrate. Shock generation was achieved through confinement of a plasma, generated upon irradiation of an absorptive paint layer held against the substrate side of the wafer. These stress waves were below the threshold required for sample fracturing. Exploiting either the laser thermal or laser-generated shock mechanisms of ignition may permit use of pSi energetic materials in applications otherwise precluded due to their environmental sensitivity.

  13. Polycrystalline GaAs solar cells on low-cost Silicon-Film{trademark} substrates

    SciTech Connect (OSTI)

    Mauk, M.G.; Feyock, B.W.; Hall, R.B.; Cavanaugh, K.D.; Cotter, J.E.

    1997-12-31

    The authors assess the potential of a low-cost, large-area Silicon-Film{trademark} sheet as a substrate for thin-film polycrystalline GaAs solar cells. Silicon-Film is a relatively inexpensive material on which large-grain (>2 mm) polycrystalline GaAs films can be formed. The GaAs epitaxial layers are grown by a simple close-spaced vapor transport (CSVT) technique using water vapor as a transport agent. A recrystallized Ge{sub 1{minus}x}Si{sub x} buffer layer between the GaAs epilayer and Silicon-Film substrate can facilitate growth of the GaAs. Selective epitaxy on patterned, oxide-masked substrates is effective in reducing thermal stress effects.

  14. Femtosecond-laser Microstructuring of Silicon: Dopants and Defects

    E-Print Network [OSTI]

    Mazur, Eric

    -laser Microstructuring of Silicon: Dopants and Defects Cynthia Friend Michael A. Sheehy Abstract This dissertation deals

  15. Reversibly immobilized biological materials in monolayer films on electrodes

    DOE Patents [OSTI]

    Weaver, P.F.; Frank, A.J.

    1993-05-04

    Methods and techniques are described for reversibly binding charged biological particles in a fluid medium to an electrode surface. The methods are useful in a variety of applications. The biological materials may include microbes, proteins, and viruses. The electrode surface may consist of reversibly electroactive materials such as polyvinylferrocene, silicon-linked ferrocene or quinone.

  16. Reversibly immobilized biological materials in monolayer films on electrodes

    DOE Patents [OSTI]

    Weaver, Paul F. (Golden, CO); Frank, Arthur J. (Lakewood, CO)

    1993-01-01

    Methods and techniques are described for reversibly binding charged biological particles in a fluid medium to an electrode surface. The methods are useful in a variety of applications. The biological materials may include microbes, proteins, and viruses. The electrode surface may consist of reversibly electroactive materials such as polyvinylferrocene, silicon-linked ferrocene or quinone.

  17. COMPARATIVE MATERIALS EVALUTION FOR A GAS TURBINE ROTOR

    E-Print Network [OSTI]

    Pennycook, Steve

    COMPARATIVE MATERIALS EVALUTION FOR A GAS TURBINE ROTOR 27th Annual Conference on Composites: microturbine, silicon nitride, turbine, CARES, recuperator, ceramic, gas turbine, life analysis #12;COMPARATIVE MATERIALS EVALUTION FOR A GAS TURBINE ROTOR Kesseli et. al Ingersoll-Rand's Ceramic Microturbine (CMT) Plan

  18. Surface Intensive Materials Processing for Multi-Functional Purposes

    SciTech Connect (OSTI)

    Ila, D.; Williams, E.K.; Muntele, C.I.; George, M.A.; Poker, D.B.; Hensley, D.K.; Larkin, D.J.

    2000-03-06

    We have chosen silicon carbide (SiC) as a multi-functional material to demonstrate the application of surface intensive processing for device fabrication. We will highlight two devices which are produced in house at the Center for Irradiation of materials of Alabama A and M university: (A) High temperature electronic gas sensor, (B) High temperature optical properties/sensor.

  19. Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

    SciTech Connect (OSTI)

    Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

    1994-10-01

    The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

  20. Process for forming silicon carbide films and microcomponents

    DOE Patents [OSTI]

    Hamza, Alex V. (Livermore, CA); Balooch, Mehdi (Berkeley, CA); Moalem, Mehran (Berkeley, CA)

    1999-01-01

    Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.

  1. Silicon Oxynitride Thin Film Barriers for PV Packaging (Poster)

    SciTech Connect (OSTI)

    del Cueto, J. A.; Glick, S. H.; Terwilliger, K. M.; Jorgensen, G. J.; Pankow, J. W.; Keyes, B. M.; Gedvilas, L. M.; Pern, F. J.

    2006-10-03

    Dielectric, adhesion-promoting, moisture barriers comprised of silicon oxynitride thin film materials (SiOxNy with various material stoichiometric compositions x,y) were applied to: 1) bare and pre-coated soda-lime silicate glass (coated with transparent conductive oxide SnO2:F and/or aluminum), and polymer substrates (polyethylene terephthalate, PET, or polyethylene napthalate, PEN); plus 2) pre- deposited photovoltaic (PV) cells and mini-modules consisting of amorphous silicon (a-Si) and copper indium gallium diselenide (CIGS) thin-film PV technologies. We used plasma enhanced chemical vapor deposition (PECVD) process with dilute silane, nitrogen, and nitrous oxide/oxygen gas mixtures in a low-power (< or = 10 milliW per cm2) RF discharge at ~ 0.2 Torr pressure, and low substrate temperatures < or = 100(degrees)C, over deposition areas ~ 1000 cm2. Barrier properties of the resulting PV cells and coated-glass packaging structures were studied with subsequent stressing in damp-heat exposure at 85(degrees)C/85% RH. Preliminary results on PV cells and coated glass indicate the palpable benefits of the barriers in mitigating moisture intrusion and degradation of the underlying structures using SiOxNy coatings with thicknesses in the range of 100-200 nm.

  2. Microwave processing of silicon carbide. CRADA final report

    SciTech Connect (OSTI)

    Kimrey, H.D.; Kiggans, J.O. [Oak Ridge National Lab., TN (United States); Ness, E.A.; Rafaniello, W. [Dow Chemical Co., Midland, MI (United States)

    1998-02-01

    A Cooperative Research and Development Agreement (CRADA) between Lockheed Martin Energy Systems, Inc. (LMES) and Dow Chemical Company was initiated on May 3, 1993. (Lockheed Martin Energy Research Inc. (LMER) replaced LMES). The completion date for the Agreement was December 1996. The purpose of this project is to develop microwave processing techniques to produce superior silicon carbide. Sintered silicon carbide is an attractive material for use in high-stress, high-temperature, high-wear, or highly corrosive applications. However, use in these applications has been hampered by a lack of consistency in strength, density, and other physical properties. It is proposed that the enhanced sintering that has been achieved using microwaves in oxide and halide systems be applied to the sintering of these materials to produce a more highly controlled density and microstructure. This will, in turn, increase the strength and Weibull modulus of the sintered body. The use of microwave energy to anneal for a moderate temperature (1,400--1,600 C) anneal in a high vacuum (< 10{sup {minus}4} Torr) results in an improvement in the sintered density and density distribution. These changes in turn result in improved properties of the sintered compacts. Further, scale up of the process has resulted in the routine production of 3 kg components in excess of 4 cm in thickness.

  3. Nanocrystalline silicon: Lattice dynamics and enhanced thermoelectric properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

    2014-12-21

    In this study, silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K-1 m-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured,more »which all reveal a significant, ?25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ?25 W K-1 m-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ? 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.« less

  4. Nanocrystalline silicon: lattice dynamics and enhanced thermoelectric properties

    SciTech Connect (OSTI)

    Claudio, Tania; Stein, Niklas; Stroppa, Daniel G.; Klobes, Benedikt; Koza, Michael Marek; Kudejova, Petra; Petermann, Nils; Wiggers, Hartmut; Schierning, Gabi; Hermann, Raphaël P.

    2014-12-21

    Silicon has several advantages when compared to other thermoelectric materials, but until recently it was not used for thermoelectric applications due to its high thermal conductivity, 156 W K-1 m-1 at room temperature. Nanostructuration as means to decrease thermal transport through enhanced phonon scattering has been a subject of many studies. In this work we have evaluated the effects of nanostructuration on the lattice dynamics of bulk nanocrystalline doped silicon. The samples were prepared by gas phase synthesis, followed by current and pressure assisted sintering. The heat capacity, density of phonons states, and elastic constants were measured, which all reveal a significant, ?25%, reduction in the speed of sound. The samples present a significantly decreased lattice thermal conductivity, ?25 W K-1 m-1, which, combined with a very high carrier mobility, results in a dimensionless figure of merit with a competitive value that peaks at ZT ? 0.57 at 973 °C. Due to its easily scalable and extremely low-cost production process, nanocrystalline Si prepared by gas phase synthesis followed by sintering could become the material of choice for high temperature thermoelectric generators.

  5. Liquid-phase plasma synthesis of silicon quantum dots embedded in carbon matrix for lithium battery anodes

    SciTech Connect (OSTI)

    Wei, Ying [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); College of Chemistry and Chemical Engineering, Bohai University, Jinzhou 121000 (China); Yu, Hang; Li, Haitao; Ming, Hai; Pan, Keming; Huang, Hui [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Liu, Yang, E-mail: yangl@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China); Kang, Zhenhui, E-mail: zhkang@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM) and Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou (China)

    2013-10-15

    Graphical abstract: - Highlights: • Silicon quantum dots embedded in carbon matrix (SiQDs/C) were fabricated. • SiQDs/C exhibits excellent battery performance as anode materials with high specific capacity. • The good performance was attributed to the marriage of small sized SiQDs and carbon. - Abstract: Silicon quantum dots embedded in carbon matrix (SiQDs/C) nanocomposites were prepared by a novel liquid-phase plasma assisted synthetic process. The SiQDs/C nanocomposites were demonstrated to show high specific capacity, good cycling life and high coulmbic efficiency as anode materials for lithium-ion battery.

  6. An all-silicon single-photon source by unconventional photon blockade

    E-Print Network [OSTI]

    H. Flayac; D. Gerace; V. Savona

    2015-03-10

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area.

  7. DEPARTMENT OF PHYSICS General Syllabus

    E-Print Network [OSTI]

    Brinkmann, Peter

    DEPARTMENT OF PHYSICS General Syllabus Physics 20700 General Physics Designation: Elective./Sem. Prerequisites: Pre- or coreq.: Math 20200 for Physics 20700. (Required for all students in the Physical Sciences, Engineering and Computer Science.) Textbook and other suggested material: "Fundamentals of Physics 9th Edition

  8. CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION ASSISTED CHEMICAL VAPOR DEPOSITION

    E-Print Network [OSTI]

    CRYSTALLINE SILICON THIN-FILM SOLAR CELLS FROM THE POROUS SILICON PROCESS APPLYING CONVECTION for the first time to monocrystalline Si thin-film solar cells from the porous silicon (PSI) layer transfer for manufacturing high efficiency silicon thin-film solar cells. Industrially feasible epitaxy systems therefore

  9. Manufacture of silicon carbide using solar energy

    DOE Patents [OSTI]

    Glatzmaier, Gregory C. (Boulder, CO)

    1992-01-01

    A method is described for producing silicon carbide particles using solar energy. The method is efficient and avoids the need for use of electrical energy to heat the reactants. Finely divided silica and carbon are admixed and placed in a solar-heated reaction chamber for a time sufficient to cause a reaction between the ingredients to form silicon carbide of very small particle size. No grinding of silicon carbide is required to obtain small particles. The method may be carried out as a batch process or as a continuous process.

  10. Monolithic amorphous silicon modules on continuous polymer substrate

    SciTech Connect (OSTI)

    Grimmer, D.P. (Iowa Thin Film Technologies, Inc., Ames, IA (United States))

    1992-03-01

    This report examines manufacturing monolithic amorphous silicon modules on a continuous polymer substrate. Module production costs can be reduced by increasing module performance, expanding production, and improving and modifying production processes. Material costs can be reduced by developing processes that use a 1-mil polyimide substrate and multilayers of low-cost material for the front encapsulant. Research to speed up a-Si and ZnO deposition rates is needed to improve throughputs. To keep throughput rates compatible with depositions, multibeam fiber optic delivery systems for laser scribing can be used. However, mechanical scribing systems promise even higher throughputs. Tandem cells and production experience can increase device efficiency and stability. Two alternative manufacturing processes are described: (1) wet etching and sheet handling and (2) wet etching and roll-to-roll fabrication.

  11. High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

    SciTech Connect (OSTI)

    Antoniadis, H.

    2011-03-01

    Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

  12. Optical absorption of silicon nanowires

    SciTech Connect (OSTI)

    Xu, T. [Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China); Institut d'Electronique et de Microelectronique et de Nanotechnologies, IEMN (CNRS, UMR 8520), Groupe de Physique, Cite scientifique, avenue Poincare, 59652 Villeneuve d'Ascq (France); Lambert, Y.; Krzeminski, C.; Grandidier, B.; Stievenard, D.; Leveque, G.; Akjouj, A.; Pennec, Y.; Djafari-Rouhani, B. [Institut d'Electronique et de Microelectronique et de Nanotechnologies, IEMN (CNRS, UMR 8520), Groupe de Physique, Cite scientifique, avenue Poincare, 59652 Villeneuve d'Ascq (France)

    2012-08-01

    We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods: the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the finite difference time domain (FDTD) method, is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies that allow to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

  13. General Relativity

    E-Print Network [OSTI]

    Canuto, V

    2015-01-01

    This is an English translation of the Italian version of an encyclopedia chapter that appeared in the Italian Encyclopedia of the Physical Sciences, edited by Bruno Bertotti (1994). Following requests from colleagues we have decided to make it available to a more general readership. We present the motivation for constructing General Relativity, provide a short discussion of tensor algebra, and follow the set up of Einstein equations. We discuss briefly the initial value problem, the linear approximation and how should non gravitational physics be described in curved spacetime.

  14. General Tables

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities NuclearlongGeneral Tables The General Tables for

  15. SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

    SciTech Connect (OSTI)

    DR. DENNIS NAGLE; DR. DAJIE ZHANG

    2009-03-26

    Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC materials are much lower due to phonon scattering by impurities (e.g., sintering aids located at the grain boundaries of these materials). The thermal conductivity of our SiC was determined using the laser flash method and it is 214 W/mK at 373 K and 64 W/mK at 1273 K. These values are very close to those of pure SiC and are much higher than those of SiC materials made by industrial processes. This SiC made by our LSI process meets the thermal properties required for use in high temperature heat exchanger. Cellulose and phenolic resin carbons lack the well-defined atomic structures associated with common carbon allotropes. Atomic-scale structure was studied using high resolution transmission electron microscopy (HRTEM), nitrogen gas adsorption and helium gas pycnometry. These studies revealed that cellulose carbon exhibits a very high degree of atomic disorder and angstrom-scale porosity. It has a density of only 93% of that of pure graphite, with primarily sp2 bonding character and a low concentration of graphene clusters. Phenolic resin carbon shows more structural order and substantially less angstrom-scale porosity. Its density is 98% of that of pure graphite, and Fourier transform analysis of its TEM micrographs has revealed high concentrations of sp3 diamond and sp2 graphene nano-clusters. This is the first time that diamond nano-clusters have been observed in carbons produced from phenolic resin. AC and DC electrical measurements were made to follow the thermal conversion of microcrystalline cellulose to carbon. This study identifies five regions of electrical conductivity that can be directly correlated to the chemical decomposition and microstructural evolution during carbonization. In Region I, a decrease in overall AC conductivity occurs due to the initial loss of the polar groups from cellulose molecules. In Region II, the AC conductivity starts to increase with heat treatment temperature due to the formation and growth of conducting carbon clusters. In Region III, a further increase of AC conductivity with increasing heat treatment temperature is obs

  16. Degradation Characteristics of Elastomeric Gasket Materials in a Simulated PEM Fuel Cell Environment

    E-Print Network [OSTI]

    Van Zee, John W.

    . The microindentation test results show that the mechanical properties of the silicone materials changed significantly of a fluoroelastomer in an alkaline environment can be found in Ref 22. Schulze et al. (Ref 23) investigated

  17. Sampling Artifacts from Conductive Silicone Tubing

    E-Print Network [OSTI]

    Timko, Michael T.

    2009-01-01

    the soot from the filter with water and collecting it in aof water placed on the “heated silicone tubing” filter (water drop placed on the “unheated stainless steel tubing” filter

  18. Femtosecond laser processing of crystalline silicon

    E-Print Network [OSTI]

    Tran, D. V.

    This paper reports the surface morphologies and ablation of crystalline silicon wafers irradiated by infra-red 775 nm Ti:sapphire femtosecond laser. The effects of energy fluences (below and above single-pulse modification) ...

  19. High index contrast platform for silicon photonics

    E-Print Network [OSTI]

    Akiyama, Shoji, 1972-

    2004-01-01

    This thesis focuses on silicon-based high index contrast (HIC) photonics. In addition to mature fiber optics or low index contrast (LIC) platform, which is often referred to as Planar Lightwave Cirrcuit (PLC) or Silica ...

  20. Texturization of multicrystalline silicon solar cells

    E-Print Network [OSTI]

    Li, Dai-Yin

    2010-01-01

    A significant efficiency gain for crystalline silicon solar cells can be achieved by surface texturization. This research was directed at developing a low-cost, high-throughput and reliable texturing method that can create ...

  1. Electrical characterization of germanium-silicon alloy 

    E-Print Network [OSTI]

    Kishore, Kumar P.

    1994-01-01

    . The fabrication procedure involved sputter deposition of silicon dioxide, oxide patterning, deposition of aluminum metal and metal patterning. Each test structure was square-shaped and consisted of eight sets of peripheral metal contacts. The results...

  2. Method for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1992-12-15

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  3. Apparatus for silicon nitride precursor solids recovery

    DOE Patents [OSTI]

    Crosbie, Gary M. (Dearborn, MI); Predmesky, Ronald L. (Livonia, MI); Nicholson, John M. (Wayne, MI)

    1995-04-04

    Method and apparatus are provided for collecting reaction product solids entrained in a gaseous outflow from a reaction situs, wherein the gaseous outflow includes a condensable vapor. A condensate is formed of the condensable vapor on static mixer surfaces within a static mixer heat exchanger. The entrained reaction product solids are captured in the condensate which can be collected for further processing, such as return to the reaction situs. In production of silicon imide, optionally integrated into a production process for making silicon nitride caramic, wherein reactant feed gas comprising silicon halide and substantially inert carrier gas is reacted with liquid ammonia in a reaction vessel, silicon imide reaction product solids entrained in a gaseous outflow comprising residual carrier gas and vaporized ammonia can be captured by forming a condensate of the ammonia vapor on static mixer surfaces of a static mixer heat exchanger.

  4. Silicon nitride having a high tensile strength

    DOE Patents [OSTI]

    Pujari, V.K.; Tracey, D.M.; Foley, M.R.; Paille, N.I.; Pelletier, P.J.; Sales, L.C.; Willkens, C.A.; Yeckley, R.L.

    1998-06-02

    A ceramic body is disclosed comprising at least about 80 w/o silicon nitride and having a mean tensile strength of at least about 800 MPa. 4 figs.

  5. Silicon cast wafer recrystallization for photovoltaic applications

    E-Print Network [OSTI]

    Hantsoo, Eerik T. (Eerik Torm)

    2008-01-01

    Current industry-standard methods of manufacturing silicon wafers for photovoltaic (PV) cells define the electrical properties of the wafer in a first step, and then the geometry of the wafer in a subsequent step. The ...

  6. An ultralow power athermal silicon modulator

    E-Print Network [OSTI]

    Timurdogan, Erman

    Silicon photonics has emerged as the leading candidate for implementing ultralow power wavelength–division–multiplexed communication networks in high-performance computers, yet current components (lasers, modulators, filters ...

  7. Engineering of silicon/HfO{sub 2} interface by variable energy proton irradiation

    SciTech Connect (OSTI)

    Maurya, Savita Maringanti, Radhakrishna; Tribedi, L. C.

    2014-08-18

    Surfaces and interfaces between materials are of paramount importance for various phenomena, such as painting a house, catalyst driven chemical reactions, intricate life processes, corrosion of materials, and fabrication of various semiconductor devices. Interface of silicon or other such substrates with any of the oxides has profound effect on the performance of metal oxide field effect transistors and other similar devices. Since a surface is an abrupt termination of a periodic crystal, surface atoms will have some unsaturated valence electrons and these unsaturated bonds at the semiconductor surface make it chemically highly reactive. Other than annealing, there is not much that can be done to manage these unsaturated bonds. This study was initiated to explore the possibility of repairing these unsaturated dangling bonds that are formed at the silicon and oxide interface during the deposition of oxide layer above silicon, by the use of proton irradiation. In order to improve the interface characteristics, we present a method to modify the interface of silicon and hafnium dioxide after its fabrication, through proton irradiation. Results of the study are promising and probably this method might be used along with other methods such as annealing to modify the interface, after its fabrication.

  8. Polycrystalline silicon resistor trimming by laser annealing 

    E-Print Network [OSTI]

    Crowley, Robert Terrence

    1989-01-01

    . ~ The single crystal band structure of silicon is applicable inside each grain. ~ Carrier trapping sites exist at the grain boundary with an area density of qq cm . These traps are filled with a density of n, cm ~ The traps are monovalent and located..., and (b) Kelvin resistors. luminum Top oxide Polysilicon Initial oxide ubstrate 26 Fig. 7. Cross sectional view of test cell. an oxidized silicon wafer. The polysilicon was oxidized for passivation, and contact windows were etched for the metal...

  9. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    SciTech Connect (OSTI)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  10. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, V.K.

    1990-08-21

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications is disclosed. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al[sub x]N[sub y]O[sub z] layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al[sub x]N[sub y]O[sub z] layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  11. Oxidation resistant high temperature thermal cycling resistant coatings on silicon-based substrates and process for the production thereof

    DOE Patents [OSTI]

    Sarin, Vinod K. (Lexington, MA)

    1990-01-01

    An oxidation resistant, high temperature thermal cycling resistant coated ceramic article for ceramic heat engine applications. The substrate is a silicon-based material, i.e. a silicon nitride- or silicon carbide-based monolithic or composite material. The coating is a graded coating of at least two layers: an intermediate AlN or Al.sub.x N.sub.y O.sub.z layer and an aluminum oxide or zirconium oxide outer layer. The composition of the coating changes gradually from that of the substrate to that of the AlN or Al.sub.x N.sub.y O.sub.z layer and further to the composition of the aluminum oxide or zirconium oxide outer layer. Other layers may be deposited over the aluminum oxide layer. A CVD process for depositing the graded coating on the substrate is also disclosed.

  12. Silicon bulk micromachined hybrid dimensional artifact.

    SciTech Connect (OSTI)

    Claudet, Andre A.; Tran, Hy D.; Bauer, Todd Marks; Shilling, Katherine Meghan; Oliver, Andrew David

    2010-03-01

    A mesoscale dimensional artifact based on silicon bulk micromachining fabrication has been developed and manufactured with the intention of evaluating the artifact both on a high precision coordinate measuring machine (CMM) and video-probe based measuring systems. This hybrid artifact has features that can be located by both a touch probe and a video probe system with a k=2 uncertainty of 0.4 {micro}m, more than twice as good as a glass reference artifact. We also present evidence that this uncertainty could be lowered to as little as 50 nm (k=2). While video-probe based systems are commonly used to inspect mesoscale mechanical components, a video-probe system's certified accuracy is generally much worse than its repeatability. To solve this problem, an artifact has been developed which can be calibrated using a commercially available high-accuracy tactile system and then be used to calibrate typical production vision-based measurement systems. This allows for error mapping to a higher degree of accuracy than is possible with a glass reference artifact. Details of the designed features and manufacturing process of the hybrid dimensional artifact are given and a comparison of the designed features to the measured features of the manufactured artifact is presented and discussed. Measurement results from vision and touch probe systems are compared and evaluated to determine the capability of the manufactured artifact to serve as a calibration tool for video-probe systems. An uncertainty analysis for calibration of the artifact using a CMM is presented.

  13. Silicon-Polymer Encapsulation of High-Level Calcine Waste for Transportation or Disposal

    SciTech Connect (OSTI)

    G. G. Loomis; C. M. Miller; J. A. Giansiracusa; R. Kimmel; S. V. Prewett

    2000-01-01

    This report presents the results of an experimental study investigating the potential uses for silicon-polymer encapsulation of High Level Calcine Waste currently stored within the Idaho Nuclear Technology and Engineering Center (INTEC) at the Idaho National Engineering and Environmental Laboratory (INEEL). The study investigated two different applications of silicon polymer encapsulation. One application uses silicon polymer to produce a waste form suitable for disposal at a High Level Radioactive Waste Disposal Facility directly, and the other application encapsulates the calcine material for transportation to an offsite melter for further processing. A simulated waste material from INTEC, called pilot scale calcine, which contained hazardous materials but no radioactive isotopes was used for the study, which was performed at the University of Akron under special arrangement with Orbit Technologies, the originators of the silicon polymer process called Polymer Encapsulation Technology (PET). This document first discusses the PET process, followed by a presentation of past studies involving PET applications to waste problems. Next, the results of an experimental study are presented on encapsulation of the INTEC calcine waste as it applies to transportation or disposal of calcine waste. Results relating to long-term disposal include: (1) a characterization of the pilot calcine waste; (2) Toxicity Characteristic Leaching Procedure (TCLP) testing of an optimum mixture of pilot calcine, polysiloxane and special additives; and, (3) Material Characterization Center testing MCC-1P evaluation of the optimum waste form. Results relating to transportation of the calcine material for a mixture of maximum waste loading include: compressive strength testing, 10-m drop test, melt testing, and a Department of Transportation (DOT) oxidizer test.

  14. Reciprocal space analysis of the microstructure of luminescent and nonluminescent porous silicon films

    SciTech Connect (OSTI)

    Lee, S.R.; Barbour, J.C.; Medernach, J.W.; Stevenson, J.O.; Custer, J.S.

    1994-12-31

    The microstructure of anodically prepared porous silicon films was determined using a novel X-ray diffraction technique. This technique uses double-crystal diffractometry combined with position-sensitive X- ray detection to efficiently and quantitatively image the reciprocal space structure of crystalline materials. Reciprocal space analysis of newly prepared, as well as aged, p{sup {minus}} porous silicon films showed that these films exhibit a very broad range of crystallinity. This material appears to range in structure from a strained, single-crystal, sponge-like material exhibiting long-range coherency to isolated, dilated nanocrystals embedded in an amorphous matrix. Reciprocal space analysis of n{sup +} and p{sup +} porous silicon showed these materials are strained single-crystals with a spatially-correlated array of vertical pores. The vertical pores in these crystals may be surrounded by nanoporous or nanocrystalline domains as small as a few nm in size which produce diffuse diffraction indicating their presence. The photoluminescence of these films was examined using 488 nm Ar laser excitation in order to search for possible correlations between photoluminescent intensity and crystalline microstructure.

  15. Covetic Materials

    Broader source: Energy.gov (indexed) [DOE]

    Can re-melt, dilute, alloy... Fabrication of Covetic Materials - Nanocarbon Infusion 3 4 Technical Approach Unusual Characteristics of Covetic Materials ("covalent" &...

  16. Irradiation and annealing of p-type silicon carbide

    SciTech Connect (OSTI)

    Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor'eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

    2014-02-21

    The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ? 1.5 × 10{sup 18} cm{sup ?3} occurs at an irradiation dose of ?1.1 × 10{sup 16} cm{sup ?2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ?1000°C. The conductivity is almost completely restored at T ? 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

  17. Liquid Silane Routes to Electronic Materials

    SciTech Connect (OSTI)

    Douglas L. Schulz; Xuliang Dai; Kendric J. Nelson; Konstantin Pokhodnya; Justin M. Hoey; Iskander S. Akhatov; Orven F. Swenson; Jeremiah Smith; John Lovaasen; Matt Robinson; Scott Payne; Philip R. Boudjouk

    2008-12-04

    New chemistries based upon liquid cyclohexasilane (Si{sub 6}H{sub 12} or CHS) have been used as precursors to silicon-containing electronic materials. Spin-coating of CHS-based inks with subsequent UV light and/or thermal treatment yielded amorphous silicon (a-Si:H) films. While initial ink chemistries gave a-Si:H with high resistivity (i.e., > 10{sup 6} {Omega}.cm), several doping strategies are under development to address this limitation. In this contribution, the current status of solution processed rectifying diodes and field effect transistors fabricated from CHS-based inks will be presented. Additionally, a new printing approach termed collimated aerosol beam direct write (CAB-DW{sup TM}) was developed that allows the deposition of printed Ag lines 5 {mu}m in width. A status update will be given where CHS-based inks have been used to CAB-DW silicon-based features with linewidths <10 {mu}m. Assuming silicon thin film materials with good electrical properties will be developed, there may be significant cost advantages associated with the ability to controllably deposit the semiconductor in a metered fashion.

  18. Methods and apparatus for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G

    2014-01-14

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  19. Combustion Synthesis of Silicon Carbide 389 Combustion Synthesis of Silicon Carbide

    E-Print Network [OSTI]

    Mukasyan, Alexander

    Combustion Synthesis of Silicon Carbide 389 X Combustion Synthesis of Silicon Carbide Alexander S. Mukasyan University of Notre Dame USA 1. Introduction Combustion synthesis (CS) is an effective technique by which combustion synthesis can occur: self - propagating high-temperature synthesis (SHS) and volume

  20. Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics

    DOE Patents [OSTI]

    Stoddard, Nathan G. (Gettysburg, PA)

    2011-11-01

    Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of monocrystalline silicon may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm is provided.

  1. Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon 

    E-Print Network [OSTI]

    Lee, I-Syuan

    2014-05-07

    effect were also investigated. It has been demonstrated that a 30 nm thick amorphous silicon could be transformed into polycrystalline with 70%-80% of crystalline volume fraction in a short time. The thin-film polycrystalline silicon solar cells were...

  2. BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS

    E-Print Network [OSTI]

    BACK CONTACT MONOCRYSTALLINE THIN-FILM SILICON SOLAR CELLS FROM THE POROUS SILICON PROCESS F. Haase contact cells. Kraiem et al [7] made a back contact thin film monocrystalline solar cell with cell), Am Ohrberg 1, D-31860 Emmerthal, Germany ABSTRACT We develop a back contact monocrystalline thin-film

  3. General Physics II Exam 5 -Chs. 30, 31 -Nuclear Physics May 11, 2010 Name Rec. Instr. Rec. Time

    E-Print Network [OSTI]

    Wysin, Gary

    General Physics II Exam 5 - Chs. 30, 31 - Nuclear Physics May 11, 2010 Name Rec. Instr. Rec. Time C + p ? a. oxygen (O) b. nitrogen (N) c. boron (B) d. silicon (Si) 7. (2) A nucleus has a binding

  4. LDRD final report on nanocomposite materials based on hydrocarbon-bridged siloxanes

    SciTech Connect (OSTI)

    Ulibarri, T.A.; Bates, S.E.; Loy, D.A.; Jamison, G.M.; Emerson, J.A.; Curro, J.G.

    1997-05-01

    Silicones [polydimethylsiloxane (PDMS) polymers] are environmentally safe, nonflammable, weather resistant, thermally stable, low T{sub g} materials which are attractive for general elastomer applications because of their safety and their performance over a wide temperature range. However, PDMS is inherently weak due to its low glass transition temperature (T{sub g}) and lack of stress crystallization. The major goal of this project was to create a family of reinforced elastomers based on silsesquioxane/PDMS networks. Polydimethylsiloxane-based (PDMS) composite materials containing a variety of alkylene-arylene-bridged polysilsesquioxanes were synthesized in order to probe short chain and linkage effects in bimodal polymer networks. Monte Carlo simulations on the alkylene-bridged silsesquioxane/PDMS system predicted that the introduction of the silsesquioxane short chains into the long chain PDMS network would have a significant reinforcing effect on the elastomer. The silsesquioxane-PDMS networks were synthesized and evaluated. Analysis of the mechanical properties of the resulting materials indicated that use of the appropriate silisesquioxane generated materials with greatly enhanced properties. Arylene and activated alkylene systems resulted in materials that showed superior adhesive strength for metal-to-metal adhesion.

  5. Anti-reflection zinc oxide nanocones for higher efficiency thin-film silicon solar cells

    E-Print Network [OSTI]

    Mailoa, Jonathan P

    2012-01-01

    Thin film silicon solar cells, which are commonly made from microcrystalline silicon ([mu]c-Si) or amorphous silicon (a-Si), have been considered inexpensive alternatives to thick polycrystalline silicon (polysilicon) solar ...

  6. STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

    SciTech Connect (OSTI)

    Katoh, Yutai; Koyanagi, Takaaki; Kiggans, Jim; Cetiner, Nesrin; McDuffee, Joel

    2014-09-01

    Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

  7. Composit, Nanoparticle-Based Anode material for Li-ion Batteries Applied in Hybrid Electric (HEV's)

    SciTech Connect (OSTI)

    Dr. Malgorzata Gulbinska

    2009-08-24

    Lithium-ion batteries are promising energy storage devices in hybrid and electric vehicles with high specific energy values ({approx}150 Wh/kg), energy density ({approx}400 Wh/L), and long cycle life (>15 years). However, applications in hybrid and electric vehicles require increased energy density and improved low-temperature (<-10 C) performance. Silicon-based anodes are inexpensive, environmentally benign, and offer excellent theoretical capacity values ({approx}4000 mAh/g), leading to significantly less anode material and thus increasing the overall energy density value for the complete battery (>500 Wh/L). However, tremendous volume changes occur during cycling of pure silicon-based anodes. The expansion and contraction of these silicon particles causes them to fracture and lose electrical contact to the current collector ultimately severely limiting their cycle life. In Phase I of this project Yardney Technical Products, Inc. proposed development of a carbon/nano-silicon composite anode material with improved energy density and silicon's cycleability. In the carbon/nano-Si composite, silicon nanoparticles were embedded in a partially-graphitized carbonaceous matrix. The cycle life of anode material would be extended by decreasing the average particle size of active material (silicon) and by encapsulation of silicon nanoparticles in a ductile carbonaceous matrix. Decreasing the average particle size to a nano-region would also shorten Li-ion diffusion path and thus improve rate capability of the silicon-based anodes. Improved chemical inertness towards PC-based, low-temperature electrolytes was expected as an additional benefit of a thin, partially graphitized coating around the active electrode material.

  8. Editorial: Photovoltaic Materials and Devices

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.; Rupnowski, P.

    2012-01-01

    As the global energy needs grow, there is increasing interest in the generation of electricity by photovoltaics (PVs) devices or solar cells - devices that convert sunlight to electricity. Solar industry has seen an enormous growth during the last decade. The sale of PV modules has exceeded 27 GW in 2011, with significant contributions to the market share from all technologies. While the silicon technology continues to have the dominant share, the other thin film technologies (CdTe, CIGS, a-Si, and organic PV) are experiencing fast growth. Increased production of silicon modules has led to a very rapid reduction in their price and remains as benchmark for other technologies. The PV industry is in full gear to commercialize new automated equipment for solar cell and module production, instrumentation for process monitoring technologies, and for implementation of other cost-reduction approaches, and extensive research continues to be carried out in many laboratories to improve the efficiency of solar cells and modules without increasing the production costs. A large variety of solar cells, which differ in the material systems used, design, PV structure, and even the principle of PV conversion, are designed to date. This special issue contains peer-reviewed papers in the recent developments in research related to broad spectrum of photovoltaic materials and devices. It contains papers on many aspects of solar cells-the growth and deposition, characterization, and new material development.

  9. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, John M. (Albuquerque, NM)

    1992-01-01

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  10. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, J.M.

    1993-04-20

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  11. Hybrid sol-gel optical materials

    DOE Patents [OSTI]

    Zeigler, John M. (Albuquerque, NM)

    1993-01-01

    Hybrid sol-gel materials comprise silicate sols cross-linked with linear polysilane, polygermane, or poly(silane-germane). The sol-gel materials are useful as optical identifiers in tagging and verification applications and, in a different aspect, as stable, visible light transparent non-linear optical materials. Methyl or phenyl silicones, polyaryl sulfides, polyaryl ethers, and rubbery polysilanes may be used in addition to the linear polysilane. The linear polymers cross-link with the sol to form a matrix having high optical transparency, resistance to thermooxidative aging, adherence to a variety of substrates, brittleness, and a resistance to cracking during thermal cycling.

  12. Silicon-based nanoenergetic composites

    SciTech Connect (OSTI)

    Asay, Blaine; Son, Steven; Mason, Aaron; Yarrington, Cole; Cho, K Y; Gesner, J; Yetter, R A

    2009-01-01

    Fundamental combustion properties of silicon-based nano-energetic composites was studied by performing equilibrium calculations, 'flame tests', and instrumented burn-tube tests. That the nominal maximum flame temperature and for many Si-oxidizer systems is about 3000 K, with exceptions. Some of these exceptions are Si-metal oxides with temperatures ranging from 2282 to 2978 K. Theoretical maximum gas production of the Si composites ranged from 350-6500 cm{sup 3}/g of reactant with NH{sub 4}ClO{sub 4} - Si producing the most gas at 6500 cm{sup 3}/g and Fe{sub 2}O{sub 3} producing the least. Of the composites tested NH{sub 4}ClO{sub 4} - Si showed the fastest burning rates with the fastest at 2.1 km/s. The Si metal oxide burning rates where on the order of 0.03-75 mls the slowest of which was nFe{sub 2}O{sub 3} - Si.

  13. General Publications

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclearlong version)shortGateGeneralMotors

  14. General Recommendations

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclearlong version)shortGateGeneralMotors»

  15. GENERAL ASSIGNMENT

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)ForthcomingGENERAL ASSIGNMENT KNOW ALL MEN BY THESE

  16. Development of Spintronic Bandgap Materials

    SciTech Connect (OSTI)

    Levy, Jeremy; Awschalom, David; Floro, Jerrold

    2014-02-16

    The development of Ge/Si quantum dots with high spatial precision has been pursued, with the goal of developing a platform for “spintronics bandgap materials”. Quantum dots assemblies were grown by molecular beam epitaxy on carbon-templated silicon substrates. These structures were characterized by atomic force microscopy. Vertically gated structures were created on systems with up to six well-defined quantum dots with a controlled geometric arrangement, and low-temperature (mK) transport experiments were performed. These experiments showed evidence for a crossover from diamagnetic to Zeeman energy shifts in resonant tunneling of electrons through electronic states in the quantum dots.

  17. material protection

    National Nuclear Security Administration (NNSA)

    %2A en Office of Weapons Material Protection http:www.nnsa.energy.govaboutusourprogramsnonproliferationprogramofficesinternationalmaterialprotectionandcooperation-1

  18. Critical Materials:

    Office of Environmental Management (EM)

    Extraction Separation Processes for Critical Materials in 30- 21 Stage Test Facility (Bruce Moyer) ......

  19. Materials Scientist

    Broader source: Energy.gov [DOE]

    Alternate Title(s):Materials Research Engineer; Metallurgical/Chemical Engineer; Product Development Manager;

  20. Crystallization and doping of amorphous silicon on low temperature plastic

    DOE Patents [OSTI]

    Kaschmitter, J.L.; Truher, J.B.; Weiner, K.H.; Sigmon, T.W.

    1994-09-13

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate is disclosed. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900 C), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180 C for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180 C) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide. 5 figs.

  1. Crystallization and doping of amorphous silicon on low temperature plastic

    DOE Patents [OSTI]

    Kaschmitter, James L. (Pleasanton, CA); Truher, Joel B. (Palo Alto, CA); Weiner, Kurt H. (Campbell, CA); Sigmon, Thomas W. (Beaverton, OR)

    1994-01-01

    A method or process of crystallizing and doping amorphous silicon (a-Si) on a low-temperature plastic substrate using a short pulsed high energy source in a selected environment, without heat propagation and build-up in the substrate. The pulsed energy processing of the a-Si in a selected environment, such as BF3 and PF5, will form a doped micro-crystalline or poly-crystalline silicon (pc-Si) region or junction point with improved mobilities, lifetimes and drift and diffusion lengths and with reduced resistivity. The advantage of this method or process is that it provides for high energy materials processing on low cost, low temperature, transparent plastic substrates. Using pulsed laser processing a high (>900.degree. C.), localized processing temperature can be achieved in thin films, with little accompanying temperature rise in the substrate, since substrate temperatures do not exceed 180.degree. C. for more than a few microseconds. This method enables use of plastics incapable of withstanding sustained processing temperatures (higher than 180.degree. C.) but which are much lower cost, have high tolerance to ultraviolet light, have high strength and good transparency, compared to higher temperature plastics such as polyimide.

  2. The static structure factor of amorphous silicon and vitreous silica

    E-Print Network [OSTI]

    Adam M. R. de Graff; M. F. Thorpe

    2009-09-14

    Liquids are in thermal equilibrium and have a non-zero static structure factor S(Q->0) = [-^2]/ = rho*k_B*T*Chi_T where rho is the number density, T is the temperature, Q is the scattering vector and Chi_T is the isothermal compressibility. The first part of this result involving the number N (or density) fluctuations is a purely geometrical result and does not involve any assumptions about thermal equilibrium or ergodicity and so is obeyed by all materials. From a large computer model of amorphous silicon, local number fluctuations extrapolate to give S(0) = 0.035+/-0.001. The same computation on a large model of vitreous silica using only the silicon atoms and rescaling the distances gives S(0) = 0.039+/-0.001, which suggests that this numerical result is robust and similar for all amorphous tetrahedral networks. For vitreous silica, we find that S(0) = 0.116+/-0.003, close to the experimental value of S(0) = 0.0900+/-0.0048 obtained recently by small angle neutron scattering. More detailed experimental and modelling studies are needed to determine the relationship between the fictive temperature and structure.

  3. Packaging effects: operating frequency, power, complexity, reliability, and cost The packaging challenge is too keep up with the demands of forecasted silicon

    E-Print Network [OSTI]

    Patel, Chintan

    Packaging effects: operating frequency, power, complexity, reliability, and cost The packaging materials, as well as process techniques. Introduction of CU/low-k materials has caused stiffness of package and silicon to become similar. The IC and package become a single physical structure requiring new knowledge

  4. Received 13 May 2013 | Accepted 18 Nov 2013 | Published 16 Dec 2013 All-back-contact ultra-thin silicon nanocone solar

    E-Print Network [OSTI]

    Cui, Yi

    , Stanford, California 94305, USA. 3 Stanford Institute for Materials and Energy Sciences, SLAC National, Stanford, California 94305, USA. 2 Department of Materials Science and Engineering, Stanford University-thin silicon nanocone solar cells with 13.7% power conversion efficiency Sangmoo Jeong1, Michael D. McGehee2

  5. Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach H. J. Xiang,1,2,* Bing Huang,2

    E-Print Network [OSTI]

    Gong, Xingao

    silicon (Si) is the leading material in the current solar cell market. However, diamond Si is an indirect phase with quasidirect gaps of 1.55 eV, which is a promising candidate for making thin-film solar cells is the leading material of microelectronic devices. Currently, the majority of solar cells fabricated to date

  6. Silicon Nanowire Array Photoelectrochemical Cells Adrian P. Goodey, Sarah M. Eichfeld, Kok-Keong Lew, Joan M. Redwing,*, and

    E-Print Network [OSTI]

    -Keong Lew, Joan M. Redwing,*, and Thomas E. Mallouk*, Departments of Chemistry and Materials Science,9 For these reasons, semiconductor nanoarchitectures have been increasingly studied for their potential solar energy been reported. To date, however, the only reported solar energy application of silicon nanowire (Si

  7. To decrease the resonant frequency of the engine compared to a previous engine using Silicon Nitride, which had a resonant

    E-Print Network [OSTI]

    Collins, Gary S.

    ·To decrease the resonant frequency of the engine compared to a previous engine using Silicon on the engine OBJECTIVES Fabrication and Characterization of PDMS Membranes for MEMS-based Micro Heat Engine M and Materials Engineering, Washington State University REU CONCLUSION ·The PDMS membranes were successfully

  8. Materials Science at Oxford is an interdisciplinary subject that makes use of knowledge from Physics,

    E-Print Network [OSTI]

    Oxford, University of

    it is made, they develop new or improved materials to meet engineering specifications, and they devise for telecommunications, semiconductors and other materials for photovoltaic energy generation, and silicon microchipsMaterials Science at Oxford is an interdisciplinary subject that makes use of knowledge from

  9. Near-infrared free carrier absorption in heavily doped silicon

    SciTech Connect (OSTI)

    Baker-Finch, Simeon C.; McIntosh, Keith R.; Yan, Di; Fong, Kean Chern; Kho, Teng C.

    2014-08-14

    Free carrier absorption in heavily doped silicon can have a significant impact on devices operating in the infrared. In the near infrared, the free carrier absorption process can compete with band to band absorption processes, thereby reducing the number of available photons to optoelectronic devices such as solar cells. In this work, we fabricate 18 heavily doped regions by phosphorus and boron diffusion into planar polished silicon wafers; the simple sample structure facilitates accurate and precise measurement of the free carrier absorptance. We measure and model reflectance and transmittance dispersion to arrive at a parameterisation for the free carrier absorption coefficient that applies in the wavelength range between 1000 and 1500?nm, and the range of dopant densities between ?10{sup 18} and 3?×?10{sup 20}?cm{sup ?3}. Our measurements indicate that previously published parameterisations underestimate the free carrier absorptance in phosphorus diffusions. On the other hand, published parameterisations are generally consistent with our measurements and model for boron diffusions. Our new model is the first to be assigned uncertainty and is well-suited to routine device analysis.

  10. Amorphous silicon detectors in positron emission tomography

    SciTech Connect (OSTI)

    Conti, M. (Istituto Nazionale di Fisica Nucleare, Pisa (Italy) Lawrence Berkeley Lab., CA (USA)); Perez-Mendez, V. (Lawrence Berkeley Lab., CA (USA))

    1989-12-01

    The physics of the detection process is studied and the performances of different Positron Emission Tomography (PET) system are evaluated by theoretical calculation and/or Monte Carlo Simulation (using the EGS code) in this paper, whose table of contents can be summarized as follows: a brief introduction to amorphous silicon detectors and some useful equation is presented; a Tantalum/Amorphous Silicon PET project is studied and the efficiency of the systems is studied by Monte Carlo Simulation; two similar CsI/Amorphous Silicon PET projects are presented and their efficiency and spatial resolution are studied by Monte Carlo Simulation, light yield and time characteristics of the scintillation light are discussed for different scintillators; some experimental result on light yield measurements are presented; a Xenon/Amorphous Silicon PET is presented, the physical mechanism of scintillation in Xenon is explained, a theoretical estimation of total light yield in Xenon and the resulting efficiency is discussed altogether with some consideration of the time resolution of the system; the amorphous silicon integrated electronics is presented, total noise and time resolution are evaluated in each of our applications; the merit parameters {epsilon}{sup 2}{tau}'s are evaluated and compared with other PET systems and conclusions are drawn; and a complete reference list for Xenon scintillation light physics and its applications is presented altogether with the listing of the developed simulation programs.

  11. Silicon ball grid array chip carrier

    DOE Patents [OSTI]

    Palmer, David W. (Albuquerque, NM); Gassman, Richard A. (Greensboro, NC); Chu, Dahwey (Albuquerque, NM)

    2000-01-01

    A ball-grid-array integrated circuit (IC) chip carrier formed from a silicon substrate is disclosed. The silicon ball-grid-array chip carrier is of particular use with ICs having peripheral bond pads which can be reconfigured to a ball-grid-array. The use of a semiconductor substrate such as silicon for forming the ball-grid-array chip carrier allows the chip carrier to be fabricated on an IC process line with, at least in part, standard IC processes. Additionally, the silicon chip carrier can include components such as transistors, resistors, capacitors, inductors and sensors to form a "smart" chip carrier which can provide added functionality and testability to one or more ICs mounted on the chip carrier. Types of functionality that can be provided on the "smart" chip carrier include boundary-scan cells, built-in test structures, signal conditioning circuitry, power conditioning circuitry, and a reconfiguration capability. The "smart" chip carrier can also be used to form specialized or application-specific ICs (ASICs) from conventional ICs. Types of sensors that can be included on the silicon ball-grid-array chip carrier include temperature sensors, pressure sensors, stress sensors, inertia or acceleration sensors, and/or chemical sensors. These sensors can be fabricated by IC processes and can include microelectromechanical (MEM) devices.

  12. Deposition of silicon carbide films using a high vacuum metalorganic chemical vapor deposition method with a single source precursor

    E-Print Network [OSTI]

    Boo, Jin-Hyo

    , high temperature, and high radiation environments. Conventional silicon carbide chemical vapor deposition CVD processes generally utilized multiple precursors such as silane and hydrocarbons, and required temperature alternatives to the conventional SiC CVD methods must be considered. To do this, a relatively

  13. Iron-oxide catalyzed silicon photoanode for water splitting

    E-Print Network [OSTI]

    Jun, Kimin

    2011-01-01

    This thesis presents an integrated study of high efficiency photoanodes for water splitting using silicon and iron-oxide. The fundamental limitations of silicon to water splitting applications were overcome by an ultrathin ...

  14. Flaw-limited transport in germanium-on-silicon photodiodes

    E-Print Network [OSTI]

    Orcutt, Jason S. (Jason Scott)

    2008-01-01

    Epitaxial germanium growth on silicon substrates has enabled a new class of photodiodes that can be integrated with traditional silicon electronics. Previous workers using lowthroughput growth techniques have demonstrated ...

  15. Harmful Shunting Mechanisms Found in Silicon Solar Cells (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-05-01

    Scientists developed near-field optical microscopy for imaging electrical breakdown in solar cells and identified critical electrical breakdown mechanisms operating in industrial silicon and epitaxial silicon solar cells.

  16. And the Award Goes to... Silicon Ink Solar Technology Supported...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator And the Award Goes to... Silicon Ink Solar Technology Supported by SunShot's PV Incubator...

  17. NREL: Technology Transfer - The Quest for Inexpensive Silicon...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Quest for Inexpensive Silicon Solar Cells Get the Adobe Flash Player to see this video. In this video, NREL scientists Howard Branz and Chaz Teplin talk more about the silicon...

  18. Direct-Write of Silicon and Germanium Nanostructures

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using photoemission electron microscopes at ALS Beamlines 7.3.1 and 11.0.1. From Sand to Processor Modern electronic integrated circuits are made of silicon. Silicon is the...

  19. Process for manufacture of semipermeable silicon nitride membranes

    DOE Patents [OSTI]

    Galambos, Paul Charles; Shul, Randy J.; Willison, Christi Gober

    2003-12-09

    A new class of semipermeable membranes, and techniques for their fabrication, have been developed. These membranes, formed by appropriate etching of a deposited silicon nitride layer, are robust, easily manufacturable, and compatible with a wide range of silicon micromachining techniques.

  20. Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

    DOE Patents [OSTI]

    Tiegs, T.N.; Lindemer, T.B.

    1991-02-19

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  1. Ceramic composites reinforced with modified silicon carbide whiskers and method for modifying the whiskers

    DOE Patents [OSTI]

    Tiegs, Terry N. (Lenoir City, TN); Lindemer, Terrence B. (Oak Ridge, TN)

    1991-01-01

    Silicon carbide whisker-reinforced ceramic composites are fabricated in a highly reproducible manner by beneficating the surfaces of the silicon carbide whiskers prior to their usage in the ceramic composites. The silicon carbide whiskers which contain considerable concentrations of surface oxides and other impurities which interact with the ceramic composite material to form a chemical bond are significantly reduced so that only a relatively weak chemical bond is formed between the whisker and the ceramic material. Thus, when the whiskers interact with a crack propagating into the composite the crack is diverted or deflected along the whisker-matrix interface due to the weak chemical bonding so as to deter the crack propagation through the composite. The depletion of the oxygen-containing compounds and other impurities on the whisker surfaces and near surface region is effected by heat treating the whiskers in a suitable oxygen sparaging atmosphere at elevated temperatures. Additionally, a sedimentation technique may be utilized to remove whiskers which suffer structural and physical anomalies which render them undesirable for use in the composite. Also, a layer of carbon may be provided on the surface of the whiskers to further inhibit chemical bonding of the whiskers to the ceramic composite material.

  2. 532 RESONANCE June 2015 GENERAL ARTICLE

    E-Print Network [OSTI]

    Giri, Ranjit K.

    utilizing ther- mal energy available via solar radiation. Phase change mate- rial (commonly known as PCM can! A class of materials, called phase change materials (PCMs) are the key to this thermal energy532 RESONANCE June 2015 GENERAL ARTICLE Latent Heat Storage Through Phase Change Materials

  3. Dynamic Mechanical Thermal Analysis of Virgin TR-55 Silicone Rubber

    SciTech Connect (OSTI)

    Small IV, W; Wilson, T S

    2009-10-09

    Dynamic mechanical thermal analysis (DMTA) of virgin TR-55 silicone rubber specimens was conducted. Dynamic frequency/temperature sweep tests were conducted over the ranges 0.1-100 rad/s and 30-100 C using a parallel plate test geometry. A strain of 0.2% was used, which was near the upper limit of the linear viscoelastic region of the material based on initial dynamic strain sweep tests. Master curves of G{prime} and G{double_prime} as a function of frequency were generated using time-temperature superposition (horizontal shift with initial vertical correction). The activation energy calculated from an Arrhenius fit to the horizontal shift factors was 178-355 kJ/mol. The calculated percent load retention at {approx}50 years was 61-68%.

  4. Optical limiting effects in nanostructured silicon carbide thin films

    SciTech Connect (OSTI)

    Borshch, A A; Starkov, V N; Volkov, V I; Rudenko, V I; Boyarchuk, A Yu; Semenov, A V

    2013-12-31

    We present the results of experiments on the interaction of nanosecond laser radiation at 532 and 1064 nm with nanostructured silicon carbide thin films of different polytypes. We have found the effect of optical intensity limiting at both wavelengths. The intensity of optical limiting at ? = 532 nm (I{sub cl} ? 10{sup 6} W cm{sup -2}) is shown to be an order of magnitude less than that at ? = 1064 nm (I{sub cl} ? 10{sup 7} W cm{sup -2}). We discuss the nature of the nonlinearity, leading to the optical limiting effect. We have proposed a method for determining the amount of linear and two-photon absorption in material media. (nonlinear optical phenomena)

  5. Metal catalyst technique for texturing silicon solar cells

    DOE Patents [OSTI]

    Ruby, Douglas S. (Albuquerque, NM); Zaidi, Saleem H. (Albuquerque, NM)

    2001-01-01

    Textured silicon solar cells and techniques for their manufacture utilizing metal sources to catalyze formation of randomly distributed surface features such as nanoscale pyramidal and columnar structures. These structures include dimensions smaller than the wavelength of incident light, thereby resulting in a highly effective anti-reflective surface. According to the invention, metal sources present in a reactive ion etching chamber permit impurities (e.g. metal particles) to be introduced into a reactive ion etch plasma resulting in deposition of micro-masks on the surface of a substrate to be etched. Separate embodiments are disclosed including one in which the metal source includes one or more metal-coated substrates strategically positioned relative to the surface to be textured, and another in which the walls of the reaction chamber are pre-conditioned with a thin coating of metal catalyst material.

  6. Improved value for the silicon free exciton binding energy

    SciTech Connect (OSTI)

    Green, Martin A., E-mail: m.green@unsw.edu.au [Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney, Australia 2052 (Australia)

    2013-11-15

    The free exciton binding energy is a key parameter in silicon material and device physics. In particular, it provides the necessary link between the energy threshold for valence to conduction band optical absorption and the bandgap determining electronic properties. The long accepted low temperature binding energy value of 14.7 ± 0.4 meV is reassessed taking advantage of developments subsequent to its original determination, leading to the conclusion that this value is definitely an underestimate. Using three largely independent experimental data sets, an improved low temperature value of 15.01 ± 0.06 meV is deduced, in good agreement with the most comprehensive theoretical calculations to date.

  7. Porous silicon membranes as ultrafiltration devices: a feasibility study 

    E-Print Network [OSTI]

    Hong, Xiangrong

    1993-01-01

    in the integrated circuits. According to research results, porous silicon layers are formed by local dissolution of silicon during anodization in hydrofluoric acid solution. Memming and Schwandt (1966) proposed the following model for the etching process... results in the formation of the etched pores. Beale (1984) investigated the microstructure of porous silicon using cross-sectional transmission electron microscopy. The studies show that the structure of porous silicon is not perfectly cylindrical...

  8. Electrically tunable hot-silicon terahertz attenuator

    SciTech Connect (OSTI)

    Wang, Minjie; Vajtai, Robert; Ajayan, Pulickel M.; Kono, Junichiro

    2014-10-06

    We have developed a continuously tunable, broadband terahertz attenuator with a transmission tuning range greater than 10{sup 3}. Attenuation tuning is achieved electrically, by simply changing the DC voltage applied to a heating wire attached to a bulk silicon wafer, which controls its temperature between room temperature and ?550?K, with the corresponding free-carrier density adjusted between ?10{sup 11?}cm{sup ?3} and ?10{sup 17?}cm{sup ?3}. This “hot-silicon”-based terahertz attenuator works most effectively at 450–550?K (corresponding to a DC voltage variation of only ?7?V) and completely shields terahertz radiation above 550?K in a frequency range of 0.1–2.5 THz. Both intrinsic and doped silicon wafers were tested and demonstrated to work well as a continuously tunable attenuator. All behaviors can be understood quantitatively via the free-carrier Drude model taking into account thermally activated intrinsic carriers.

  9. Impact of the hydrogen content on the photoluminescence efficiency of amorphous silicon alloys

    SciTech Connect (OSTI)

    Kistner, J.; Schubert, M. B. [Institute for Photovoltaics and Research Center SCoPE, University of Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

    2013-12-07

    This paper analyzes the impact of hydrogen on the photoluminescence (PL) efficiency of the three wide gap silicon alloys: silicon carbide (a-SiC{sub x}), silicon nitride (a-SiN{sub x}): silicon oxide (a-SiO{sub x}). All three materials behave similarly. The progression of the PL efficiency over the Si content splits into two regions. With decreasing Si content, the PL efficiency increases until a maximum is reached. With a further decrease of the Si content, the PL efficiency declines again. A comprehensive analysis of the sample structure reveals that the PL efficiency depends on the degree of passivation of Si and Y atoms (Y?=?C, N, O) with hydrogen. For samples with a high Si content, an effective passivation of incorporated Y atoms gives rise to an increasing PL efficiency. The PL efficiency of samples with a low Si content is limited due to a rising amount of unpassivated Si defect states. We find that a minimum amount of 0.2?H atoms per Si atom is required to maintain effective luminescence.

  10. Alternative process for thin layer etching: Application to nitride spacer etching stopping on silicon germanium

    SciTech Connect (OSTI)

    Posseme, N., E-mail: nicolas.posseme@cea.fr; Pollet, O.; Barnola, S. [CEA-LETI-Minatec, 17 rue des martyrs, 38054 Grenoble cedex 09 (France)

    2014-08-04

    Silicon nitride spacer etching realization is considered today as one of the most challenging of the etch process for the new devices realization. For this step, the atomic etch precision to stop on silicon or silicon germanium with a perfect anisotropy (no foot formation) is required. The situation is that none of the current plasma technologies can meet all these requirements. To overcome these issues and meet the highly complex requirements imposed by device fabrication processes, we recently proposed an alternative etching process to the current plasma etch chemistries. This process is based on thin film modification by light ions implantation followed by a selective removal of the modified layer with respect to the non-modified material. In this Letter, we demonstrate the benefit of this alternative etch method in term of film damage control (silicon germanium recess obtained is less than 6?A), anisotropy (no foot formation), and its compatibility with other integration steps like epitaxial. The etch mechanisms of this approach are also addressed.

  11. Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

    E-Print Network [OSTI]

    Shakoor, A; Cardile, P; Portalupi, S L; Gerace, D; Welna, K; Boninelli, S; Franzo, G; Priolo, F; Krauss, T F; Galli, M; Faolain, L O

    2013-01-01

    Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300- 1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enahnce the electrically driven emission in a device via Purcell effect. A narrow ({\\Delta}{\\lambda} = 0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4 mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects a...

  12. Electromigration process for the purification of molten silicon during crystal growth

    DOE Patents [OSTI]

    Lovelace, Alan M. Administrator of the National Aeronautics and Space (San Pedro, CA); Shlichta, Paul J. (San Pedro, CA)

    1982-01-01

    A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. The process has particular applications for silicon crystal growth according to Czochralski techniques and edge-defined film-fed growth (EFG) conditions. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. In the EFG crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities are thereby migrated to one side only of the crystal ribbon. The impurities may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

  13. Electrochemical characteristics of plasma-etched black silicon as anodes for Li-ion batteries

    SciTech Connect (OSTI)

    Lee, Gibaek; Wehrspohn, Ralf B., E-mail: ralf.b.wehrspohn@iwmh.fraunhofer.de [Fraunhofer Institute for Mechanics of Materials IWM, Halle (Saale) 06120, Germany and Department of Physics, Martin-Luther University, Halle (Saale) 06099 (Germany); Schweizer, Stefan L. [Department of Physics, Martin-Luther University, Halle (Saale) 06099 (Germany)

    2014-11-01

    Nanostructured silicon as an anode material for Li-ion batteries is produced for the first time by inductively coupled plasma–plasma etching of Si wafers in the black silicon regime. The microscopic structure strongly resembles other types of nanostructured silicon, with a well-arranged nanostructure possessing a sufficient porosity for accommodating large volume expansion. Despite these features, however, a high first-cycle irreversible capacity loss and a poor cycle life are observed. The main reason for these poor features is the formation of a thick solid-electrolyte interphase (SEI) layer related to the surface condition of the pristine nanostructured black silicon (b-Si) electrode. Therefore, the cycle life of the b-Si electrode is heavily influenced by the constant reformation of the SEI layer depending upon the surface composition in spite of the presence of nanostructured Si. In the fast lithiation experiments, the nanostructure region of the b-Si electrode is detached from the Si substrate owing to the kinetics difference between the lithium ion diffusion and the electron injection and phase transformation in the nanostructured Si region. This means that more Si substrate is involved in lithiation at high current rates. It is therefore important to maintain balance in the chemical kinetics during the lithiation of nanostructured Si electrodes with a Si substrate.

  14. Thermoelectric materials having porosity

    DOE Patents [OSTI]

    Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir; Harris, Fred

    2014-08-05

    A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

  15. Electrifying inks with 2D materials

    E-Print Network [OSTI]

    Torrisi, Felice; Coleman, Jonathan N.

    2014-10-06

    beyond conventional silicon-based technologies. Electronic devices including radio-frequency identification (RFID) tags, light emitting diodes, batteries, and transistors can be built by printing liquid-dispersed functional materials such as organic... , conducting-polymer-based inks are not stable enough for many applications, whereas most nanotube inks contain both semiconducting and metallic tubes. Graphene fulfils most requirements for use in conducting inks thanks to its high carrier mobility...

  16. Molybdenum enhanced low-temperature deposition of crystalline silicon nitride

    DOE Patents [OSTI]

    Lowden, Richard A. (Powell, TN)

    1994-01-01

    A process for chemical vapor deposition of crystalline silicon nitride which comprises the steps of: introducing a mixture of a silicon source, a molybdenum source, a nitrogen source, and a hydrogen source into a vessel containing a suitable substrate; and thermally decomposing the mixture to deposit onto the substrate a coating comprising crystalline silicon nitride containing a dispersion of molybdenum silicide.

  17. ARC Centre of Excellence for Advanced Silicon Photovoltaics

    E-Print Network [OSTI]

    New South Wales, University of

    ARC Centre of Excellence for Advanced Silicon Photovoltaics and Photonics Annual Report 2005 ARC Centre of Excellence for Advanced Silicon Photovoltaics and Photonics Annual Report 2005 #12;Centre of Excellence for Advanced Silicon Photovoltaics and Photonics is a Centre of Excellence of The Australian

  18. Silicon nitride ceramic having high fatigue life and high toughness

    DOE Patents [OSTI]

    Yeckley, Russell L. (Oakham, MA)

    1996-01-01

    A sintered silicon nitride ceramic comprising between about 0.6 mol % and about 3.2 mol % rare earth as rare earth oxide, and between about 85 w/o and about 95 w/o beta silicon nitride grains, wherein at least about 20% of the beta silicon nitride grains have a thickness of greater than about 1 micron.

  19. Silicon-nitride and metal composite

    DOE Patents [OSTI]

    Landingham, Richard L. (Livermore, CA); Huffsmith, Sarah A. (Urbana, IL)

    1981-01-01

    A composite and a method for bonding the composite. The composite includes a ceramic portion of silicon nitride, a refractory metal portion and a layer of MoSi.sub.2 indirectly bonding the composite together. The method includes contacting the layer of MoSi.sub.2 with a surface of the silicon nitride and with a surface of the metal; heating the layer to a temperature below 1400.degree. C.; and, simultaneously with the heating, compressing the layer such that the contacting is with a pressure of at least 30 MPa. This composite overcomes useful life problems in the fabrication of parts for a helical expander for use in power generation.

  20. Lead carbonate scintillator materials

    DOE Patents [OSTI]

    Derenzo, Stephen E. (Pinole, CA); Moses, William W. (Berkeley, CA)

    1991-01-01

    Improved radiation detectors containing lead carbonate or basic lead carbonate as the scintillator element are disclosed. Both of these scintillators have been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to other known scintillator materials. The radiation detectors disclosed are favorably suited for use in general purpose detection and in medical uses.

  1. Materials Science

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Database (TPMD) Aerospace Structural Metals Database (ASMD) Damage Tolerant Design Handbook (DTDH) Microelectronics Packaging Materials Database (MPMD) Structural Alloys...

  2. Addressing the Manufacturing Issues Associated with the use of Ceramic Materials for Diesel Engine Components.

    SciTech Connect (OSTI)

    McSpadden, SB

    2001-09-12

    This CRADA supports the objective of selecting appropriate ceramic materials for manufacturing several diesel engine components and addressing critical manufacturing issues associated with these components. Materials that were evaluated included several varieties of silicon nitride and stabilized zirconia. The critical manufacturing issues that were addressed included evaluation of the effect of grain size and the effect of the grinding process on mechanical properties, mechanical performance, reliability, and expected service life. The CRADA comprised four tasks: (1) Machining of Zirconia and Silicon Nitride Materials; (2) Mechanical Properties Characterization and Performance Testing; (3) Tribological Studies; and (4) Residual Stress Studies. Using instrumented equipment at the High Temperature Materials Laboratory (HTML) Machining and Inspection Research User Center (MIRUC), zirconia and silicon nitride materials were ground into simulated component geometries. These components were subsequently evaluated for mechanical properties, wear, and residual stress characteristics in tasks two, three, and four.

  3. Fabricating amorphous silicon solar cells by varying the temperature _of the substrate during deposition of the amorphous silicon layer

    DOE Patents [OSTI]

    Carlson, David E. (Yardley, PA)

    1982-01-01

    An improved process for fabricating amorphous silicon solar cells in which the temperature of the substrate is varied during the deposition of the amorphous silicon layer is described. Solar cells manufactured in accordance with this process are shown to have increased efficiencies and fill factors when compared to solar cells manufactured with a constant substrate temperature during deposition of the amorphous silicon layer.

  4. Process for forming a porous silicon member in a crystalline silicon member

    DOE Patents [OSTI]

    Northrup, M. Allen (Berkeley, CA); Yu, Conrad M. (Antioch, CA); Raley, Norman F. (Danville, CA)

    1999-01-01

    Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gasses in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters.

  5. High spatial resolution radiation detectors based on hydrogenated amorphous silicon and scintillator

    SciTech Connect (OSTI)

    Jing, T [Univ. of California, Berkeley, CA (United States). Dept. of Engineering-Nuclear Engineering

    1995-05-01

    Hydrogenated amorphous silicon (a-Si:H) as a large-area thin film semiconductor with ease of doping and low-cost fabrication capability has given a new impetus to the field of imaging sensors; its high radiation resistance also makes it a good material for radiation detectors. In addition, large-area microelectronics based on a-Si:H or polysilicon can be made with full integration of peripheral circuits, including readout switches and shift registers on the same substrate. Thin a-Si:H p-i-n photodiodes coupled to suitable scintillators are shown to be suitable for detecting charged particles, electrons, and X-rays. The response speed of CsI/a-Si:H diode combinations to individual particulate radiation is limited by the scintillation light decay since the charge collection time of the diode is very short (< 10ns). The reverse current of the detector is analyzed in term of contact injection, thermal generation, field enhanced emission (Poole-Frenkel effect), and edge leakage. A good collection efficiency for a diode is obtained by optimizing the p layer of the diode thickness and composition. The CsI(Tl) scintillator coupled to an a-Si:H photodiode detector shows a capability for detecting minimum ionizing particles with S/N {approximately}20. In such an arrangement a p-i-n diode is operated in a photovoltaic mode (reverse bias). In addition, a p-i-n diode can also work as a photoconductor under forward bias and produces a gain yield of 3--8 for shaping times of 1 {micro}s. The mechanism of the formation of structured CsI scintillator layers is analyzed. Initial nucleation in the deposited layer is sensitive to the type of substrate medium, with imperfections generally catalyzing nucleation. Therefore, the microgeometry of a patterned substrate has a significant effect on the structure of the CsI growth.

  6. Silicon Carbide and Silicon Carbide Composites for Fusion Reactor Applications

    SciTech Connect (OSTI)

    Hinoki, Tatsuya [Kyoto University, Japan] [Kyoto University, Japan; Hasegawa, Akira [Tohoku University, Japan] [Tohoku University, Japan; Katoh, Yutai [ORNL] [ORNL; Snead, Lance Lewis [ORNL] [ORNL; Jung, H.C. [Kyoto University, Japan] [Kyoto University, Japan; Katsui, Hirokazu [Tohoku University, Japan] [Tohoku University, Japan; Kondo, Sosuke [ORNL] [ORNL; Zhong, Z. H. [Kyoto University, Japan] [Kyoto University, Japan; Park, Y. H. [Kyoto University, Japan] [Kyoto University, Japan; Shih, Chunghao [ORNL] [ORNL; Ozawa, Kazumi [ORNL] [ORNL; Parish, Chad M [ORNL] [ORNL; Meisner, Roberta Ann [ORNL] [ORNL

    2013-01-01

    This paper reviews recent achievements as to "nuclear-grade" SiC composites in particular for materials-system integration. SiC composite component development are reviewed including VHTR control rod scale model and compact intermediate heat exchanger scale mode by current joining and assembly techniques. Joining methods for SiC to metal and results of characterization of joint shear strength by the torsion tests using small specimens were also reviewed. The recent results of neutron irradiation experiments were also reviewed including detailed analysis of mechanical properties, irradiation creep and preliminary results on tritium behavior in SiC.

  7. Material and processes selection in conceptual design 

    E-Print Network [OSTI]

    Krishnakumar, Karthikeyan

    2005-02-17

    Materials and manufacturing processes are an integral part of the design of a product. The need to combine materials and manufacturing processes selection during the early stages of the design has previously been realized. The work that generally...

  8. Laser MicroChemical Shaping of Silicon

    E-Print Network [OSTI]

    Burns, Michael J.

    Laser MicroChemical Shaping of Silicon MURI Workshop Feb 28, 2005 Michael J. Burns, Ph.D. LMC Product Manager #12;FEI Copyright © 2005 Vectra LMC 9900 2 Laser Micro Chemical (LMC) ·Use of laser light to induce local chemical reactions. ·Both Laser Chemical Etching (LCE) and Laser Chemical Deposition (LCD

  9. Accurate performance measurement of silicon solar cells

    E-Print Network [OSTI]

    Accurate performance measurement of silicon solar cells William Murray Keogh July 2001 A thesis is an important part of the solar cell manufacturing process. Two classes of measurement can be considered accuracy. The light source is very important when calibrating solar cells. Commonly used light sources

  10. Methanol Steam Reformer on a Silicon Wafer

    SciTech Connect (OSTI)

    Park, H; Malen, J; Piggott, T; Morse, J; Sopchak, D; Greif, R; Grigoropoulos, C; Havstad, M; Upadhye, R

    2004-04-15

    A study of the reforming rates, heat transfer and flow through a methanol reforming catalytic microreactor fabricated on a silicon wafer are presented. Comparison of computed and measured conversion efficiencies are shown to be favorable. Concepts for insulating the reactor while maintaining small overall size and starting operation from ambient temperature are analyzed.

  11. Silicon Wafer Processing Dr. Seth P. Bates

    E-Print Network [OSTI]

    Colton, Jonathan S.

    of the few markets in which, as time passes, the power and capacity of the products grows steadily, while to successfully transform the silicon into ICs require an absolute absence of contaminants. Thus, the process the cost of that power and capacity drops. Today, only twenty years later, we are continually pushing

  12. High Q silicon carbide microdisk resonator

    SciTech Connect (OSTI)

    Lu, Xiyuan; Lee, Jonathan Y.; Feng, Philip X.-L.; Lin, Qiang

    2014-05-05

    We demonstrate a silicon carbide (SiC) microdisk resonator with optical Q up to 5.12?×?10{sup 4}. The high optical quality, together with the diversity of whispering-gallery modes and the tunability of external coupling, renders SiC microdisk a promising platform for integrated quantum photonics applications.

  13. Nanoparticle-based etching of silicon surfaces

    DOE Patents [OSTI]

    Branz, Howard (Boulder, CO); Duda, Anna (Denver, CO); Ginley, David S. (Evergreen, CO); Yost, Vernon (Littleton, CO); Meier, Daniel (Atlanta, GA); Ward, James S. (Golden, CO)

    2011-12-13

    A method (300) of texturing silicon surfaces (116) such to reduce reflectivity of a silicon wafer (110) for use in solar cells. The method (300) includes filling (330, 340) a vessel (122) with a volume of an etching solution (124) so as to cover the silicon surface 116) of a wafer or substrate (112). The etching solution (124) is made up of a catalytic nanomaterial (140) and an oxidant-etchant solution (146). The catalytic nanomaterial (140) may include gold or silver nanoparticles or noble metal nanoparticles, each of which may be a colloidal solution. The oxidant-etchant solution (146) includes an etching agent (142), such as hydrofluoric acid, and an oxidizing agent (144), such as hydrogen peroxide. Etching (350) is performed for a period of time including agitating or stirring the etching solution (124). The etch time may be selected such that the etched silicon surface (116) has a reflectivity of less than about 15 percent such as 1 to 10 percent in a 350 to 1000 nanometer wavelength range.

  14. Evaluation of Neutron Irradiated Silicon Carbide and Silicon Carbide Composites

    SciTech Connect (OSTI)

    Newsome G, Snead L, Hinoki T, Katoh Y, Peters D

    2007-03-26

    The effects of fast neutron irradiation on SiC and SiC composites have been studied. The materials used were chemical vapor deposition (CVD) SiC and SiC/SiC composites reinforced with either Hi-Nicalon{trademark} Type-S, Hi-Nicalon{trademark} or Sylramic{trademark} fibers fabricated by chemical vapor infiltration. Statistically significant numbers of flexural samples were irradiated up to 4.6 x 10{sup 25} n/m{sup 2} (E>0.1 MeV) at 300, 500 and 800 C in the High Flux Isotope Reactor at Oak Ridge National Laboratory. Dimensions and weights of the flexural bars were measured before and after the neutron irradiation. Mechanical properties were evaluated by four point flexural testing. Volume increase was seen for all bend bars following neutron irradiation. Magnitude of swelling depended on irradiation temperature and material, while it was nearly independent of irradiation fluence over the fluence range studied. Flexural strength of CVD SiC increased following irradiation depending on irradiation temperature. Over the temperature range studied, no significant degradation in mechanical properties was seen for composites fabricated with Hi-Nicalon{trademark} Type-S, while composites reinforced with Hi-Nicalon{trademark} or Sylramic fibers showed significant degradation. The effects of irradiation on the Weibull failure statistics are also presented suggesting a reduction in the Weibull modulus upon irradiation. The cause of this potential reduction is not known.

  15. Materials Science and Engineering B 127 (2006) 9197 Short communication

    E-Print Network [OSTI]

    Anderson, Timothy J.

    2006-01-01

    Materials Science and Engineering B 127 (2006) 91­97 Short communication Oxynitride mediated epitaxy of gallium nitride on silicon(1 1 1) substrates in a merged hydride/metal-organic vapor phase epitaxy system M.A. Mastro, O.M. Kryliouk, T.J. Anderson Department of Chemical Engineering, University

  16. Application Of Optical Processing For Growth Of Silicon Dioxide

    DOE Patents [OSTI]

    Sopori, Bhushan L. (Denver, CO)

    1997-06-17

    A process for producing a silicon dioxide film on a surface of a silicon substrate. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm.sup.2 to about 6 watts/cm.sup.2 for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm.sup.2 for growth of a 100.ANG.-300.ANG. film at a resultant temperature of about 400.degree. C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO.sub.2 /Si interface to be very low.

  17. Application of optical processing for growth of silicon dioxide

    DOE Patents [OSTI]

    Sopori, B.L.

    1997-06-17

    A process for producing a silicon dioxide film on a surface of a silicon substrate is disclosed. The process comprises illuminating a silicon substrate in a substantially pure oxygen atmosphere with a broad spectrum of visible and infrared light at an optical power density of from about 3 watts/cm{sup 2} to about 6 watts/cm{sup 2} for a time period sufficient to produce a silicon dioxide film on the surface of the silicon substrate. An optimum optical power density is about 4 watts/cm{sup 2} for growth of a 100{angstrom}-300{angstrom} film at a resultant temperature of about 400 C. Deep level transient spectroscopy analysis detects no measurable impurities introduced into the silicon substrate during silicon oxide production and shows the interface state density at the SiO{sub 2}/Si interface to be very low. 1 fig.

  18. Hazard Sampling Dialog General Layout

    E-Print Network [OSTI]

    Zhang, Tao

    1 Hazard Sampling Dialog General Layout The dialog's purpose is to display information about the hazardous material being sampled by the UGV so either the system or the UV specialist can identify the risk level of the hazard. The dialog is associated with the hazmat reading icons (Table 1). Components

  19. Radiation Machines and Radioactive Materials (Iowa)

    Broader source: Energy.gov [DOE]

    These chapters describe general provisions and regulatory requirements; registration, licensure, and transportation of radioactive materials; and exposure standards for radiation protection.

  20. Scintillator material

    DOE Patents [OSTI]

    Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

    1994-01-01

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

  1. Scintillator material

    DOE Patents [OSTI]

    Anderson, David F. (Batavia, IL); Kross, Brian J. (Aurora, IL)

    1992-01-01

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography.

  2. Scintillator material

    DOE Patents [OSTI]

    Anderson, D.F.; Kross, B.J.

    1994-06-07

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

  3. Scintillator material

    DOE Patents [OSTI]

    Anderson, D.F.; Kross, B.J.

    1992-07-28

    An improved scintillator material comprising cerium fluoride is disclosed. Cerium fluoride has been found to provide a balance of good stopping power, high light yield and short decay constant that is superior to known scintillator materials such as thallium-doped sodium iodide, barium fluoride and bismuth germanate. As a result, cerium fluoride is favorably suited for use as a scintillator material in positron emission tomography. 4 figs.

  4. material recovery

    National Nuclear Security Administration (NNSA)

    dispose of dangerous nuclear and radiological material, and detect and control the proliferation of related WMD technology and expertise.

  5. New Tool Quantitatively Maps Minority-Carrier Lifetime of Multicrystalline Silicon Bricks (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2011-11-01

    NREL's new imaging tool could provide manufacturers with insight on their processes. Scientists at the National Renewable Energy Laboratory (NREL) have used capabilities within the Process Development and Integration Laboratory (PDIL) to generate quantitative minority-carrier lifetime maps of multicrystalline silicon (mc-Si) bricks. This feat has been accomplished by using the PDIL's photoluminescence (PL) imaging system in conjunction with transient lifetime measurements obtained using a custom NREL-designed resonance-coupled photoconductive decay (RCPCD) system. PL imaging can obtain rapid high-resolution images that provide a qualitative assessment of the material lifetime-with the lifetime proportional to the pixel intensity. In contrast, the RCPCD technique provides a fast quantitative measure of the lifetime with a lower resolution and penetrates millimeters into the mc-Si brick, providing information on bulk lifetimes and material quality. This technique contrasts with commercially available minority-carrier lifetime mapping systems that use microwave conductivity measurements. Such measurements are dominated by surface recombination and lack information on the material quality within the bulk of the brick. By combining these two complementary techniques, we obtain high-resolution lifetime maps at very fast data acquisition times-attributes necessary for a production-based diagnostic tool. These bulk lifetime measurements provide manufacturers with invaluable feedback on their silicon ingot casting processes. NREL has been applying the PL images of lifetime in mc-Si bricks in collaboration with a U.S. photovoltaic industry partner through Recovery Act Funded Project ARRA T24. NREL developed a new tool to quantitatively map minority-carrier lifetime of multicrystalline silicon bricks by using photoluminescence imaging in conjunction with resonance-coupled photoconductive decay measurements. Researchers are not hindered by surface recombination and can look deeper into the material to map bulk lifetimes. The tool is being applied to silicon bricks in a project collaborating with a U.S. photovoltaic industry partner. Photovoltaic manufacturers can use the NREL tool to obtain valuable feedback on their silicon ingot casting processes.

  6. Enhanced UV light detection using wavelength-shifting properties of Silicon nanoparticles

    E-Print Network [OSTI]

    S. Magill; M. Nayfeh; M. Fizari; J. Malloy; Y. Maximenko; J. Xie; H. Yu

    2015-03-27

    Detection of UV photons is becoming increasingly necessary with the use of noble gases and liquids in elementary particle experiments. Cerenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments all require sensitivity to UV photons. New sensor materials are needed that can directly detect UV photons and/or absorb UV photons and re-emit light in the visible range measurable by existing photosensors. It has been shown that silicon nanoparticles are sensitive to UV light in a wavelength range around ~200 nm. UV light is absorbed and re-emitted at wavelengths in the visible range depending on the size of the nanoparticles. Initial tests of the wavelength-shifting properties of silicon nanoparticles are presented here that indicate by placing a film of nanoparticles in front of a standard visible-wavelength detecting photosensor, the response of the sensor is significantly enhanced at wavelengths < 320 nm.

  7. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (? 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore »only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

  8. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography

    SciTech Connect (OSTI)

    Xu, Jia; Zhang, Ziang; Weng, Zhankun; Wang, Zuobin Wang, Dapeng

    2014-05-28

    This paper presents a new method for the generation of cross-scale laser interference patterns and the fabrication of moth-eye structures on silicon. In the method, moth-eye structures were produced on a surface of silicon wafer using direct six-beam laser interference lithography to improve the antireflection performance of the material surface. The periodic dot arrays of the moth-eye structures were formed due to the ablation of the irradiance distribution of interference patterns on the wafer surface. The shape, size, and distribution of the moth-eye structures can be adjusted by controlling the wavelength, incidence angles, and exposure doses in a direct six-beam laser interference lithography setup. The theoretical and experimental results have shown that direct six-beam laser interference lithography can provide a way to fabricate cross-scale moth-eye structures for antireflection applications.

  9. Radiation defects in silicon due to hadrons and leptons, their annealing and influence on detector performance

    E-Print Network [OSTI]

    Ionel Lazanu; Sorina Lazanu

    2002-03-25

    A phenomenological model was developed to explain quantitatively, without free parameters, the production of primary defects in silicon after particle irradiation, the kinetics of their evolution toward equilibrium and their influence on detector parameters. The type of the projectile particle and its energy is considered in the evaluation of the concentration of primary defects. Vacancy-interstitial annihilation, interstitial migration to sinks, vacancy - impurity complexes (VP, VO, V2O), and divacancy (V2) formation are taken into account in different irradiation conditions, for different concentrations of impurities in the semiconductor material, for 20 and 0 degrees C. The model can be extended to include other vacancy and interstitial complexes. The density of the reverse current in the detector after irradiation is estimated. Comparison with experimental measurements is performed. A special application considered in the paper is the modelled case of the behaviour of silicon detectors operating in the pion field estimated for the LHC accelerator, under continuum generation and annealing.

  10. The role of point defects and defect complexes in silicon device processing. Summary report and papers

    SciTech Connect (OSTI)

    Sopori, B.; Tan, T.Y.

    1994-08-01

    This report is a summary of a workshop hold on August 24--26, 1992. Session 1 of the conference discussed characteristics of various commercial photovoltaic silicon substrates, the nature of impurities and defects in them, and how they are related to the material growth. Session 2 on point defects reviewed the capabilities of theoretical approaches to determine equilibrium structure of defects in the silicon lattice arising from transitional metal impurities and hydrogen. Session 3 was devoted to a discussion of the surface photovoltaic method for characterizing bulk wafer lifetimes, and to detailed studies on the effectiveness of various gettering operations on reducing the deleterious effects of transition metals. Papers presented at the conference are also included in this summary report.

  11. Hydex Glass and Amorphous Silicon for Integrated Nonlinear Optical Signal Processing

    E-Print Network [OSTI]

    Morandotti, Roberto

    2015-01-01

    Photonic integrated circuits that exploit nonlinear optics in order to generate and process signals all-optically have achieved performance far superior to that possible electronically - particularly with respect to speed. Although silicon-on-insulator has been the leading platform for nonlinear optics for some time, its high two-photon absorption at telecommunications wavelengths poses a fundamental limitation. We review the recent achievements based in new CMOS-compatible platforms that are better suited than SOI for nonlinear optics, focusing on amorphous silicon and Hydex glass. We highlight their potential as well as the challenges to achieving practical solutions for many key applications. These material systems have opened up many new capabilities such as on-chip optical frequency comb generation and ultrafast optical pulse generation and measurement.

  12. Synthesis and Analysis of Alpha Silicon Carbide Components for Encapsulation of Fuel Rods and Pellets

    SciTech Connect (OSTI)

    Kevin M. McHugh; John E. Garnier; George W. Griffith

    2011-09-01

    The chemical, mechanical and thermal properties of silicon carbide (SiC) along with its low neutron activation and stability in a radiation field make it an attractive material for encapsulating fuel rods and fuel pellets. The alpha phase (6H) is particularly stable. Unfortunately, it requires very high temperature processing and is not readily available in fibers or near-net shapes. This paper describes an investigation to fabricate a-SiC as thin films, fibers and near-net-shape products by direct conversion of carbon using silicon monoxide vapor at temperatures less than 1700 C. In addition, experiments to nucleate the alpha phase during pyrolysis of polysilazane, are also described. Structure and composition were characterized using scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction. Preliminary tensile property analysis of fibers was also performed.

  13. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect (OSTI)

    Demaurex, Bénédicte, E-mail: benedicte.demaurex@epfl.ch; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Ballif, Christophe; De Wolf, Stefaan [École Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Maladière 71B, CH-2000 Neuchâtel (Switzerland); Alexander, Duncan T. L.; Jeangros, Quentin [École Polytechnique Fédérale de Lausanne (EPFL), Interdisciplinary Centre for Electron Microscopy (CIME), Station 12, CH-1015 Lausanne (Switzerland)

    2014-08-07

    Low-temperature (?200?°C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  14. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect (OSTI)

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-07

    Low-temperature (? 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  15. Combinatorial synthesis of novel materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

    2002-02-12

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

  16. Combinatorial synthesis of novel materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Menlo Park, CA)

    2001-01-01

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

  17. Combinatorial synthesis of novel materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

    1999-01-01

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

  18. Combinatorial synthesis of novel materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Menlo Park, CA)

    1999-12-21

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

  19. Combinatorial sythesis of organometallic materials

    DOE Patents [OSTI]

    Schultz, Peter G. (Oakland, CA); Xiang, Xiaodong (Alameda, CA); Goldwasser, Isy (Alameda, CA)

    2002-07-16

    Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to predefined regions on a substrate, and simultaneously reacting the components to form at least two materials. Materials which can be prepared using the methods and apparatus of the present invention include, for example, covalent network solids, ionic solids and molecular solids. More particularly, materials which can be prepared using the methods and apparatus of the present invention include, for example, inorganic materials, intermetallic materials, metal alloys, ceramic materials, organic materials, organometallic materials, non-biological organic polymers, composite materials (e.g., inorganic composites, organic composites, or combinations thereof), etc. Once prepared, these materials can be screened for useful properties including, for example, electrical, thermal, mechanical, morphological, optical, magnetic, chemical, or other properties. Thus, the present invention provides methods for the parallel synthesis and analysis of novel materials having useful properties.

  20. Microfluidic systems with embedded materials and structures and method thereof

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Rose, Klint A (Boston, MA); Maghribi, Mariam (Livermore, CA); Benett, William (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA); Graff, Robert T. (Modesto, CA); Jankowski, Alan (Livermore, CA)

    2007-03-06

    Described herein is a process for fabricating microfluidic systems with embedded components in which micron-scale features are molded into the polymeric material polydimethylsiloxane (PDMS). Micromachining is used to create a mold master and the liquid precursors for PDMS are poured over the mold and allowed to cure. The PDMS is then removed form the mold and bonded to another material such as PDMS, glass, or silicon after a simple surface preparation step to form sealed microchannels.