National Library of Energy BETA

Sample records for ge sn pb

  1. 125Te NMR chemical-shift trends in PbTeGeTe and PbTeSnTe alloys

    SciTech Connect (OSTI)

    Njegic, Bosiljka; Levin, Evgenii M.; Schmidt-Rohr, Klaus

    2013-10-08

    Complex tellurides, such as doped PbTe, GeTe, and their alloys, are among the best thermoelectric materials. Knowledge of the change in 125Te NMR chemical shift due to bonding to dopant or solute atoms is useful for determination of phase composition, peak assignment, and analysis of local bonding. We have measured the 125Te NMR chemical shifts in PbTe-based alloys, Pb1?xGexTe and Pb1?xSnxTe, which have a rocksalt-like structure, and analyzed their trends. For low x, several peaks are resolved in the 22-kHz MAS 125Te NMR spectra. A simple linear trend in chemical shifts with the number of Pb neighbors is observed. No evidence of a proposed ferroelectric displacement of Ge atoms in a cubic PbTe matrix is detected at low Ge concentrations. The observed chemical shift trends are compared with the results of DFT calculations, which confirm the linear dependence on the composition of the first-neighbor shell. The data enable determination of the composition of various phases in multiphase telluride materials. They also provide estimates of the 125Te chemical shifts of GeTe and SnTe (+970 and +400150 ppm, respectively, from PbTe), which are otherwise difficult to access due to Knight shifts of many hundreds of ppm in neat GeTe and SnTe.

  2. Thermoelectric and microstructural properties of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te compounds prepared by spinodal decomposition

    SciTech Connect (OSTI)

    Sondergaard, M.; Christensen, M.; Johnsen, S. [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark); Stiewe, C.; Dasgupta, T.; Mueller, E. [German Aerospace Center (DLR), Linder Hoehe, DE-51147 Cologne (Germany); Iversen, B.B., E-mail: bo@chem.au.d [Center for Energy Materials, Department of Chemistry and iNANO, Aarhus University, DK-8000 Aarhus C (Denmark)

    2011-05-15

    Three samples of Pb{sub 0.9-x}Sn{sub 0.1}Ge{sub x}Te with x=0.25, 0.35, 0.6 were prepared by heating the mixtures above the melting point of the constituent elements followed by quenching in water. The x=0.6 sample is close to the center of the immiscibility region, while the x=0.25 and 0.35 samples are in the Pb rich region inside the spinodal miscibility gap. Microstructural investigations using Powder X-ray Diffraction, Scanning Electron Microscopy and Energy Dispersive X-ray Spectroscopy revealed both GeTe-rich and PbTe-rich phases. The samples were uniaxially hot pressed and the thermoelectric properties were characterized in the temperature range 2-400 K using a commercial apparatus and from 300 to 650 K with a custom designed setup. The best sample (x=0.6) reached zT{approx}0.6 at 650 K, while the x=0.25 and 0.35 samples showed thermal instability at elevated temperatures. -- Graphical abstract: Spinodal decomposition in the GeTe-SnTe-PbTe system demonstrated by SEM and EXS images. Display Omitted Highlights: {yields} Investigation of Pb-rich part of the spinodal miscibility gap in PbTe-SnTe-GeTe. {yields} zT=0.6 at 650 K reproduced for Pb{sub 0.3}Sn{sub 0.1}Ge{sub 0.6}Te. {yields} Pb-rich phases shown to be thermally instable. {yields} Thermoelectric property characterization at low and high temperature. {yields} Microstructural investigations using PXRD, SEM, EDX and PSM.

  3. Phase stabilities of pyrite-related MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te): A systematic DFT study

    SciTech Connect (OSTI)

    Bachhuber, Frederik; Krach, Alexander; Furtner, Andrea; Söhnel, Tilo; Peter, Philipp; Rothballer, Jan; Weihrich, Richard

    2015-03-15

    Pyrite-type and related systems appear for a wide range of binary and ternary combinations of transition metals and main group elements that form Zintl type dumbbell anion units. Those representatives with 20 valence electrons exhibit an extraordinary structural flexibility and interesting properties as low-gap semiconductors or thermoelectric and electrode materials. This work is devoted to the systematic exploration of novel compounds within the class of MTCh compounds (M=Ni, Pd, Pt; T=Si, Ge, Sn, Pb; Ch=S, Se, Te) by means of density functional calculations. Their preferred structures are predicted from an extended scheme of colored pyrites and marcasites. To determine their stabilities, competing binary MT{sub 2} and MCh{sub 2} boundary phases are taken into account as well as ternary M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} systems. Recently established stability diagrams are presented to account for MTCh ordering phenomena with a focus on a not-yet-reported ordering variant of the NiAs{sub 2} type. Due to the good agreement with experimental data available for several PtTCh systems, the predictions for the residual systems are considered sufficiently accurate. - Graphical abstract: Compositional and structural stability of MTCh compounds is investigated from first principle calculations. A conceptional approach is presented to study and predict novel stable and metastable compounds and structures of low gap semiconductors with TCh dumbbell units that are isoelectronic and structurally related to pyrite (FeS{sub 2}). - Highlights: • Study of compositional stability of MTCh vs. M{sub 3}T{sub 2}Ch{sub 2} and M{sub 2}T{sub 3}Ch{sub 3} compounds. • Study of structural stability of known and novel MTCh compounds. • Prediction of novel stable and metastable structures and compounds isoelectronic to pyrite, FeS{sub 2}.

  4. D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb): A new class of hexatomic mono-anionic species with trigonal bipyramidal carbon

    SciTech Connect (OSTI)

    Wu, Yan-Bo E-mail: zxwang@ucas.ac.cn; Li, Yan-Qin; Bai, Hui; Lu, Hai-Gang; Li, Si-Dian; Zhai, Hua-Jin; Wang, Zhi-Xiang E-mail: zxwang@ucas.ac.cn

    2014-03-14

    The non-classical trigonal bipyramidal carbon (TBPC) arrangement generally exists as transition states (TSs) in nucleophilic bimolecular substitution (S{sub N}2) reactions. Nevertheless, chemists have been curious about whether such a carbon bonding could be stable in equilibrium structures for decades. As the TBPC arrangement was normally realized as cationic species theoretically and experimentally, only one anionic example ([At-C(CN){sub 3}-At]{sup −}) was computationally devised. Herein, we report the design of a new class of anionic TBPC species by using the strategy similar to that for stabilizing the non-classical planar hypercoordinate carbon. When electron deficient Al and Ga were used as the equatorial ligands, eight D{sub 3h} [A-CE{sub 3}-A]{sup −} (E = Al and Ga, A = Si, Ge, Sn, and Pb) TBPC structures were found to be the energy minima rather than TSs at both the B3LYP and MP2 levels. Remarkably, the energetic results at the CCSD(T) optimization level further identify [Ge-CAl{sub 3}-Ge]{sup −} and [Sn-CGa{sub 3}-Sn]{sup −} even to be the global minima and [Si-CAl{sub 3}-Si]{sup −} and [Ge-CGa{sub 3}-Ge]{sup −} to be the local minima, only slightly higher than their global minima. The electronic structure analyses reveal that the substantial ionic C–E bonding, the peripheral E–A covalent bonding, and the axial mc-2e (multi center-two electrons) bonding play roles in stabilizing these TBPC structures. The structural simplicity and the high thermodynamic stability suggest that some of these species may be generated and captured in the gas phase. Furthermore, as mono-anionic species, their first vertical detachment energies are differentiable from those of their nearest isomers, which would facilitate their characterization via experiments such as the negative ion photoelectron spectroscopy.

  5. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  6. Critical thickness for strain relaxation of Ge{sub 1−x}Sn{sub x} (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

    SciTech Connect (OSTI)

    Wang, Wei; Zhou, Qian; Dong, Yuan; Yeo, Yee-Chia; Tok, Eng Soon

    2015-06-08

    We investigated the critical thickness (h{sub c}) for plastic relaxation of Ge{sub 1−x}Sn{sub x} grown by molecular beam epitaxy. Ge{sub 1−x}Sn{sub x} films with various Sn mole fraction x (x ≤ 0.17) and different thicknesses were grown on Ge(001). The strain relaxation of Ge{sub 1−x}Sn{sub x} films and the h{sub c} were investigated by high-resolution x-ray diffraction and reciprocal space mapping. It demonstrates that the measured h{sub c} values of Ge{sub 1−x}Sn{sub x} layers are as much as an order of magnitude larger than that predicted by the Matthews and Blakeslee (M-B) model. The People and Bean (P-B) model was also used to predict the h{sub c} values in Ge{sub 1−x}Sn{sub x}/Ge system. The measured h{sub c} values for various Sn content follow the trend, but slightly larger than that predicted by the P-B model.

  7. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOE Patents [OSTI]

    Anderson, Iver E.; Yost, Frederick G.; Smith, John F.; Miller, Chad M.; Terpstra, Robert L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217.degree. C. and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid "mushy" zone) relative to the eutectic melting temperature (e.g. up to 15.degree. C. above the eutectic melting temperature).

  8. Pb-free Sn-Ag-Cu ternary eutectic solder

    DOE Patents [OSTI]

    Anderson, I.E.; Yost, F.G.; Smith, J.F.; Miller, C.M.; Terpstra, R.L.

    1996-06-18

    A Pb-free solder includes a ternary eutectic composition consisting essentially of about 93.6 weight % Sn-about 4.7 weight % Ag-about 1.7 weight % Cu having a eutectic melting temperature of about 217 C and variants of the ternary composition wherein the relative concentrations of Sn, Ag, and Cu deviate from the ternary eutectic composition to provide a controlled melting temperature range (liquid-solid ``mushy`` zone) relative to the eutectic melting temperature (e.g. up to 15 C above the eutectic melting temperature). 5 figs.

  9. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect (OSTI)

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  10. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  11. Strangelet search in Pb-Pb interactions at 158 GeV/{ital c} per nucleon

    SciTech Connect (OSTI)

    Appelquist, G.; Baglin, C.; Beringer, J.; Bohm, C.; Borer, K.; Bussiere, A.; Dittus, F.; Elsener, K.; Frei, D.; Gorodetzky, P.; Guillaud, J.P.; Hugentobler, E.; Klingenberg, R.; Linden, T.; Lohmann, K.D.; Moser, U.; Pal, T.; Pretzl, K.; Schacher, J.; Sellden, B.; Stoffel, F.; Tuominiemi, J.; Zhang, Q.P.

    1996-05-01

    The NA52 experiment searches for long-lived massive strange quark matter particles, so-called {ital strangelets}, produced in Pb-Pb collisions at a beam momentum of {ital p}{sub lab}=158 AGeV/{ital c}. Upper limits for the production of strangelets at zero degree production angle covering a mass to charge ratio up to 120 GeV/{ital c}{sup 2} and lifetimes {ital t}{sub lab}{approx_gt}1.2 {mu}s are given. The data presented here were taken during the 1994 lead beam running period at CERN. {copyright} {ital 1996 The American Physical Society.}

  12. Formation of non-substitutional ?-Sn defects in Ge{sub 1?x}Sn{sub x} alloys

    SciTech Connect (OSTI)

    Fuhr, J. D.; Ventura, C. I.; Barrio, R. A.

    2013-11-21

    Although group IV semiconductor alloys are expected to form substitutionally, in Ge{sub 1?x}Sn{sub x} this is true only for low concentrations (x?Sn), consisting of a single Sn atom in the center of a Ge divacancy, which may account for the segregation of Sn at large x. Afterwards, the existence of this defect was confirmed experimentally. In this paper we study the local environment and the interactions of the substitutional defect (?-Sn), the vacancy in Ge, and the ?-Sn defect by performing extensive numerical ab initio calculations. Our results confirm that a ?-Sn defect can be formed by natural diffusion of a vacancy around the substitutional ?-Sn defect, since the energy barrier for the process is very small.

  13. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  14. Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (α-Ge)

    SciTech Connect (OSTI)

    Kang, Dong-Ho; Park, Jin-Hong

    2014-12-15

    Highlights: • In- and Sn-based MIC phenomenon on amorphous (α)-Ge is newly reported. • The In- and Sn-MIC phenomenon respectively started at 250 °C and 400 °C. • The Sn-MIC process presents higher sheet resistance and bigger crystal grains. - Abstract: In this paper, metal-induced crystallization (MIC) phenomenon on α-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

  15. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including

  16. Electroluminescence from GeSn heterostructure pin diodes at the indirect to direct transition

    SciTech Connect (OSTI)

    Gallagher, J. D.; Menéndez, J.; Senaratne, C. L.; Sims, P.; Kouvetakis, J.; Aoki, T.

    2015-03-02

    The emission properties of GeSn heterostructure pin diodes have been investigated. The devices contain thick (400–600 nm) Ge{sub 1−y}Sn{sub y} i-layers spanning a broad compositional range below and above the crossover Sn concentration y{sub c} where the Ge{sub 1−y}Sn{sub y} alloy becomes a direct-gap material. These results are made possible by an optimized device architecture containing a single defected interface thereby mitigating the deleterious effects of mismatch-induced defects. The observed emission intensities as a function of composition show the contributions from two separate trends: an increase in direct gap emission as the Sn concentration is increased, as expected from the reduction and eventual reversal of the separation between the direct and indirect edges, and a parallel increase in non-radiative recombination when the mismatch strains between the structure components is partially relaxed by the generation of misfit dislocations. An estimation of recombination times based on the observed electroluminescence intensities is found to be strongly correlated with the reverse-bias dark current measured in the same devices.

  17. Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Ames Laboratory Reliable Nanomanufacturing of Ge-Sn Alloys for Solar Energy Conversion Based on the US Department of Energy's International Energy Outlook 2014 report, global consumption of energy is estimated to rise by more than 50% between 2004 and 2030. One of the biggest scientific challenges is finding a clean renewable energy resource that will replace fossil fuels and avoid adverse effects on climate, environment, and health. This project aims to advance our understanding of the

  18. The interaction between divacancies and shallow dopants in irradiated Ge:Sn

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    It has been found that upon annealing of irradiated Ge doped with gallium and Sn simultaneously with disappearance of divacancies V{sub 2}{sup 0} the appearance of the new absorption spectrum consisting of sharp lines was observed. The spectrum is identical to the absorption spectrum of gallium. It is shown that the defect, to which the new spectrum corresponds, has hydrogen-like properties. The distances between the lines in the spectrum are in good agreement with those predicted by effective-mass theory. The appearance of Fano resonance in the continuum region in addition to intracenter transitions of the defect was detected. The defect found is identified as SnV{sub 2}{sup 0}Ga. The binding energy for the ground state of the SnV{sub 2}{sup 0}Ga centers has been estimated.

  19. Average and local structure of the Pb-free ferroelectric perovskites (Sr,Sn)TiO3 and (Ba,Ca,Sn)TiO3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laurita, Geneva; Page, Katharine; Suzuki, Shoichiro; Seshadri, Ram

    2015-12-16

    The characteristic structural off -centering of Pb2+ in oxides, associated with its 6s2 lone pair, allows it to play a dominant role in polar materials, and makes it a somewhat ubiquitous component of ferroelectrics. In this work, we examine the compounds Sr0.9Sn0.1TiO3 and Ba0.79Ca0.16Sn0.05TiO3 using neutron total scattering techniques with data acquired at di erent temperatures. In these compounds, previously reported as ferroelectrics, Sn2+ appears to display some of the characteristics of Pb2+. We compare the local and long-range structures of the Sn2+-substituted compositions to the unsubstituted parent compounds SrTiO3 and BaTiO3. Lastly, we find that even at these smallmore » substitution levels, the Sn2+ lone pairs drive the local ordering behavior, with the local structure of both compounds more similar to the structure of PbTiO3 rather than the parent compounds.« less

  20. Local composition and carrier concentration in Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys from 125Te NMR and microscopy

    SciTech Connect (OSTI)

    Levin, E M; Kramer, M J; Schmidt-Rohr, K

    2014-11-01

    Pb0.7Ge0.3Te and Pb0.5Ge0.5Te alloys, (i) quenched from 923 K or (ii) quenched and annealed at 573 K for 2 h, have been studied by 125Te NMR, X-ray diffraction, electron and optical microscopy, as well as energy dispersive spectroscopy. Depending on the composition and thermal treatment history, 125Te NMR spectra exhibit different resonance frequencies and spin-lattice relaxation times, which can be assigned to different phases in the alloy. Quenched and annealed Pb0.7Ge0.3Te alloys can be considered as solid solutions but are shown by NMR to have components with various carrier concentrations. Quenched and annealed Pb0.5Ge0.5Te alloys contain GeTe- and PbTe-based phases with different compositions and charge carrier concentrations. Based on the analysis of non-exponential 125Te NMR spin-lattice relaxation, the fractions and carrier concentrations of the various phases have been estimated. Our data show that alloying of PbTe with Ge results in the formation of chemically and electronically inhomogeneous systems. 125Te NMR can be used as an efficient probe to detect the local composition in equilibrium as well as non-equilibrium states, and to determine the local carrier concentrations in complex multiphase tellurides.

  1. Fully gapped superconductivity in In-doped topological crystalline insulator Pb0.5Sn0.5Te

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Du, Guan; Gu, G. D.; Du, Zengyi; Fang, Delong; Yang, Huan; Zhong, R. D.; Schneeloch, J.; Wen, Hai -Hu

    2015-07-27

    In this study, superconductors derived from topological insulators and topological crystalline insulators by chemical doping have long been considered to be candidates as topological superconductors. Pb0.5Sn0.5Te is a topological crystalline insulator with mirror symmetry protected surface states on (001)-, (011)-, and (111)-oriented surfaces. The superconductor (Pb0.5Sn0.5)0.7In0.3Te is produced by In doping in Pb0.5Sn0.5Te, and is thought to be a topological superconductor. Here we report scanning tunneling spectroscopy measurements of the superconducting state as well as the superconducting energy gap in (Pb0.5Sn0.5)0.7In0.3Te on a (001)-oriented surface. The spectrum can be well fitted by an anisotropic s-wave gap function of Δ =more » 0.72 + 0.18cos4θ meV using Dynes model. The results show that the superconductor seems to be a fully gapped one without any in-gap states, in contradiction with the expectation of a topological superconductor.« less

  2. Topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te thin films on SrTiO{sub 3} (001) with tunable Fermi levels

    SciTech Connect (OSTI)

    Guo, Hua; Liu, Jun-Wei; Wang, Zhen-Yu; Wu, Rui; Ji, Shuai-Hua; Duan, Wen-Hui; Chen, Xi Xue, Qi-Kun; Yan, Chen-Hui; Zhang, Zhi-Dong; Wang, Li-Li; He, Ke; Ma, Xu-Cun

    2014-05-01

    In this letter, we report a systematic study of topological crystalline insulator Pb{sub x}Sn{sub 1-x}Te (0 < x < 1) thin films grown by molecular beam epitaxy on SrTiO{sub 3}(001). Two domains of Pb{sub x}Sn{sub 1-x}Te thin films with intersecting angle of ? ? 45 were confirmed by reflection high energy diffraction, scanning tunneling microscopy, and angle-resolved photoemission spectroscopy (ARPES). ARPES study of Pb{sub x}Sn{sub 1-x}Te thin films demonstrated that the Fermi level of PbTe could be tuned by altering the temperature of substrate whereas SnTe cannot. An M-shaped valance band structure was observed only in SnTe but PbTe is in a topological trivial state with a large gap. In addition, co-evaporation of SnTe and PbTe results in an equivalent variation of Pb concentration as well as the Fermi level of Pb{sub x}Sn{sub 1-x}Te thin films.

  3. Energy dependence of {phi} meson production in central Pb+Pb collisions at {radical}(s{sub NN})=6 to 17 GeV

    SciTech Connect (OSTI)

    Alt, C.; Blume, C.; Dinkelaker, P.; Flierl, D.; Kliemant, M.; Kniege, S.; Kollegger, T.; Lungwitz, B.; Mitrovski, M.; Renfordt, R.; Schuster, T.; Stock, R.; Strabel, C.; Stroebele, H.; Wetzler, A.; Anticic, T.; Kadija, K.; Nicolic, V.; Susa, T.; Baatar, B.

    2008-10-15

    {phi} meson production is studied by the NA49 Collaboration in central Pb+Pb collisions at 20A,30A,40A,80A, and 158A GeV beam energy. The data are compared with measurements at lower and higher energies and with microscopic and thermal models. The energy dependence of yields and spectral distributions is compatible with the assumption that partonic degrees of freedom set in at low SPS energies.

  4. K*(892)⁰ and K̄*(892)⁰ production in central Pb + Pb, Si + Si, C + C, and inelastic p + p collisions at 158A GeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anticic, T.; Baatar, B.; Barna, D.; Bartke, J.; Beck, H.; Betev, L.; Białkowska, H.; Blume, C.; Bogusz, M.; Boimska, B.; et al

    2011-12-13

    Production of the K*(892)0 and K̄*(892)⁰ resonances was studied via their K⁺π⁻ and K⁻π⁺ decay modes in central Pb+Pb, Si+Si, C+C, and inelastic p+p collisions at 158A GeV(√(sNN)=17.3 GeV) with the NA49 detector at the CERN SPS. Transverse momentum and rapidity distributions were measured and total yields were estimated. The yield of K* exceeds that of K̄* by about a factor of two in nucleus-nucleus reactions. The total yield ratios ⟨K*⟩/⟨K+⟩ and ⟨K̄*⟩/⟨K-⟩ are strongly suppressed in central Pb+Pb compared to p+p, C+C, and Si+Si collisions, in agreement with the expected attenuation of these short-lived resonance states in the hadronicmore » phase of the expanding fireball. The UrQMD model, although incorporating such a scenario, does not provide a quantitative description of the experimental results. The statistical hadron gas model assuming the same freeze-out parameters for stable hadrons and resonances overestimates the ⟨K*⟩/⟨K⟩ ratios in central Pb+Pb collisions by about a factor of 2.5.« less

  5. Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes on silicon for mid-infrared photonic applications

    SciTech Connect (OSTI)

    Gallagher, J. D.; Xu, C.; Menéndez, J.; Senaratne, C. L.; Wallace, P. M.; Kouvetakis, J.; Aoki, T.

    2015-10-07

    This paper reports initial the demonstration of prototype Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge{sub 1−x−y}Si{sub x}Sn{sub y}/p-Ge(Sn/Si)] using ultra low-temperature (T < 300 °C) depositions of the highly reactive chemical sources Si{sub 4}H{sub 10}, Ge{sub 4}H{sub 10}, Ge{sub 3}H{sub 8}, and SnD{sub 4}. The Sn content in the i-Ge{sub 1−x−y}Si{sub x}Sn{sub y} layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge{sub 1−y}Sn{sub y} counterparts. These findings-combined with the enhanced thermal stability of Ge{sub 1−x−y}Si{sub x}Sn{sub y} relative to Ge{sub 1−y}Sn{sub y} and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge{sub 1−x−y}Si{sub x}Sn{sub y} may represent a practical target system for future generations of group-IV light sources on Si.

  6. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe

    SciTech Connect (OSTI)

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan; Dane, Markus; Tripathi, Gouri S.; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-12-09

    The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by the alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.

  7. Phonon self-energy and origin of anomalous neutron scattering spectra in SnTe and PbTe thermoelectrics

    SciTech Connect (OSTI)

    Li, Chen [ORNL] [ORNL; Ma, Jie [ORNL] [ORNL; May, Andrew F [ORNL] [ORNL; Cao, Huibo [ORNL] [ORNL; Christianson, Andrew D [ORNL] [ORNL; Ehlers, Georg [ORNL] [ORNL; Singh, David J [ORNL] [ORNL; Sales, Brian C [ORNL] [ORNL; Delaire, Olivier A [ORNL] [ORNL

    2014-01-01

    The anharmonic lattice dynamics of rock-salt thermoelectric compounds SnTe and PbTe are investigated with inelastic neutron scattering (INS) and first-principles calculations. The experiments show that, surprisingly, although SnTe is closer to the ferroelectric instability, phonon spectra in PbTe exhibit a more anharmonic character. This behavior is reproduced in first-principles calculations of the temperature-dependent phonon self-energy. Our simulations reveal how the nesting of phonon dispersions induces prominent features in the self-energy, which account for the measured INS spectra and their temperature dependence. We establish that the phase-space for three-phonon scattering processes, rather than just the proximity to the lattice instability, is the mechanism determining the complex spectrum of the transverse-optical ferroelectric mode.

  8. Temperature-driven band inversion in Pb?.??Sn?.??Se: Optical and Hall-effect studies

    SciTech Connect (OSTI)

    Anand, Naween; Gu, Genda; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb?.??Sn?.??Se, a IV-VI mixed chalcogenide. The temperature dependent (10300 K) reflectance was measured over 407000 cm? (5870 meV) with an extension to 15,500 cm? (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy optical spectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.

  9. Temperature-driven band inversion in Pb?.??Sn?.??Se: Optical and Hall-effect studies

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Anand, Naween; Gu, Genda; Buvaev, Sanal; Hebard, A. F.; Tanner, D. B.; Chen, Zhiguo; Li, Zhiqiang; Choudhary, Kamal; Sinnott, S. B.; Martin, C.

    2014-12-23

    Optical and Hall-effect measurements have been performed on single crystals of Pb?.??Sn?.??Se, a IV-VI mixed chalcogenide. The temperature dependent (10300 K) reflectance was measured over 407000 cm? (5870 meV) with an extension to 15,500 cm? (1.92 eV) at room temperature. The reflectance was fit to the Drude-Lorentz model using a single Drude component and several Lorentz oscillators. The optical properties at the measured temperatures were estimated via Kramers-Kronig analysis as well as by the Drude-Lorentz fit. The carriers were p-type with the carrier density determined by Hall measurements. A signature of valence intraband transition is found in the low-energy opticalmorespectra. It is found that the valence-conduction band transition energy as well as the free carrier effective mass reach minimum values at 100 K, suggesting temperature-driven band inversion in the material. Density function theory calculation for the electronic band structure also make similar predictions.less

  10. Electric charge fluctuations in central Pb+Pb collisions at 20A, 30A, 40A, 80A, and 158A GeV

    SciTech Connect (OSTI)

    Alt, C.; Betev, L.; Billmeier, A.; Bramm, R.; Dinkelaker, P.; Flierl, D.; Gazdzicki, M.; Kliemant, M.; Kniege, S.; Kollegger, T.; Lungwitz, B.; Meurer, C.; Mitrovski, M.; Renfordt, R.; Richard, A.; Stock, R.; Stroebele, H.; Wetzler, A.; Zaranek, J.; Anticic, T.

    2004-12-01

    Results are presented on event-by-event electric charge fluctuations in central Pb+Pb collisions at 20A,30A,40A,80A, and 158A GeV. The observed fluctuations are close to those expected for a gas of pions correlated by global charge conservation only. These fluctuations are considerably larger than those calculated for an ideal gas of deconfined quarks and gluons. The present measurements do not necessarily exclude reduced fluctuations from a quark-gluon plasma because these might be masked by contributions from resonance decays.

  11. Generating X-ray in MeV regime from interactions of mono-energetic electrons with Sn and Pb

    SciTech Connect (OSTI)

    Masalehdan, Hossein

    2012-09-06

    Quasi mono-energetic x-ray beams generated from thin targets by interaction of mono-energetic electron beams from 600 mJ, 80 fs laser pulse. A micron-scale laser-produced plasma creates, accelerates relativistic mono-energetic electron bunches. As such electrons propagate in the ion channel produced in the wake of the laser pulse; the accelerated electrons can interact with Sn, Pb targets and generate X-ray radiation of MeV energy and MeV/cm2 flux.

  12. Enhanced carrier mobility and direct tunneling probability of biaxially strained Ge{sub 1−x}Sn{sub x} alloys for field-effect transistors applications

    SciTech Connect (OSTI)

    Liu, Lei; Liang, Renrong E-mail: junxu@tsinghua.edu.cn; Wang, Jing; Xu, Jun E-mail: junxu@tsinghua.edu.cn

    2015-05-14

    The carrier transport and tunneling capabilities of biaxially strained Ge{sub 1−x}Sn{sub x} alloys with (001), (110), and (111) orientations were comprehensively investigated and compared. The electron band structures of biaxially strained Ge{sub 1−x}Sn{sub x} alloys were calculated by the nonlocal empirical pseudopotential method and the modified virtual crystal approximation was adopted in the calculation. The electron and hole effective masses at the band edges were extracted using a parabolic line fit. It is shown that the applied biaxial strain and the high Sn composition are both helpful for the reduction of carrier effective masses, which leads to the enhanced carrier mobility and the boosted direct band-to-band-tunneling probability. Furthermore, the strain induced valance band splitting reduces the hole interband scattering, and the splitting also results in the significantly enhanced direct tunneling rate along the out-of-plane direction compared with that along the in-plane direction. The biaxially strained (111) Ge{sub 1−x}Sn{sub x} alloys exhibit the smallest band gaps compared with (001) and (110) orientations, leading to the highest in-plane and out-of-plane direct tunneling probabilities. The small effective masses on (110) and (111) planes in some strained conditions also contribute to the enhanced carrier mobility and tunneling probability. Therefore, the biaxially strained (110) and (111) Ge{sub 1−x}Sn{sub x} alloys have the potential to outperform the corresponding (001) Ge{sub 1−x}Sn{sub x} devices. It is important to optimize the applied biaxial strain, the Sn composition, and the substrate orientation for the design of high performance Ge{sub 1−x}Sn{sub x} field-effect transistors.

  13. Energy and centrality dependence of p and p production and the {lambda}/p ratio in Pb+Pb collisions between 20A GeV and 158A GeV

    SciTech Connect (OSTI)

    Alt, C.; Blume, C.; Bramm, R.; Dinkelaker, P.; Flierl, D.; Kliemant, M.; Kniege, S.; Lungwitz, B.; Mitrovski, M.; Renfordt, R.; Schuster, T.; Stock, R.; Strabel, C.; Stroebele, H.; Wetzler, A.; Anticic, T.; Kadija, K.; Nicolic, V.; Susa, T.; Baatar, B.

    2006-04-15

    The transverse mass m{sub t} distributions for antiprotons are measured at midrapidity for minimum bias Pb+Pb collisions at 158A GeV and for central Pb+Pb collisions at 20A, 30A, 40A, and 80A GeV beam energies in the fixed target experiment NA49 at the CERN SPS. The rapidity density dn/dy, inverse slope parameter T, and mean transverse mass derived from the m{sub t} distributions are studied as a function of the incident energy and the collision centrality and compared to the relevant data on proton production. The shapes of the m{sub t} distributions of p and p are very similar. The ratios of the particle yields, p/p and {lambda}/p, are also analyzed. The p/p ratio exhibits an increase with decreasing centrality and a steep rise with increasing beam energy. The {lambda}/p ratio increases beyond unity with decreasing beam energy.

  14. Energy dependence of transverse momentum fluctuations in Pb+Pb collisions at the CERN Super Proton Synchrotron (SPS) at 20A to 158A GeV

    SciTech Connect (OSTI)

    Anticic, T.; Kadija, K.; Nicolic, V.; Susa, T.; Baatar, B.; Kolesnikov, V. I.; Malakhov, A. I.; Melkumov, G. L.; Barna, D.; Csato, P.; Fodor, Z.; Gal, J.; Hegyi, S.; Laszlo, A.; Levai, P.; Molnar, J.; Palla, G.; Sikler, F.; Szentpetery, I.; Sziklai, J.

    2009-04-15

    Results are presented on event-by-event fluctuations of transverse momenta p{sub T} in central Pb+Pb interactions at 20A, 30A, 40A, 80A, and 158A GeV. The analysis was performed for charged particles at forward center-of-mass rapidity (1.1

  15. Energy dependence of transverse momentum fluctuations in Pb+Pb collisions at the CERN Super Proton Synchrotron (SPS) at 20A to 158A GeV

    SciTech Connect (OSTI)

    NA49 Collaboration; Anticic, T.

    2009-04-15

    Results are presented on event-by-event fluctuations of transverse momenta p{sub T} in central Pb+Pb interactions at 20A, 30A, 40A, 80A, and 158A GeV. The analysis was performed for charged particles at forward center-of-mass rapidity (1.1 < y*{sub {pi}} < 2.6). Three fluctuation measures were studied: the distribution of average transverse momentum M(p{sub T}) in the event, the {phi}{sub p{sub T}} fluctuation measure, and two-particle transverse momentum correlations. Fluctuations of p{sub T} are small and show no significant energy dependence in the energy range of the CERN Super Proton Synchrotron. Results are compared with QCD-inspired predictions for the critical point, and with the UrQMD model. Transverse momentum fluctuations, similar to multiplicity fluctuations, do not show the increase expected for freeze-out near the critical point of QCD.

  16. GeP and (Ge{sub 1−x}Sn{sub x})(P{sub 1−y}Ge{sub y}) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    SciTech Connect (OSTI)

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-04-15

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge{sub 0.93(3)}P{sub 0.95(1)}Sn{sub 0.12(3)}: a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder.

  17. Pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} on amorphous dielectric layers towards monolithic 3D photonic integration

    SciTech Connect (OSTI)

    Li, Haofeng; Brouillet, Jeremy; Wang, Xiaoxin; Liu, Jifeng

    2014-11-17

    We demonstrate pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} crystallized on amorphous layers at <450 °C towards 3D Si photonic integration. We developed two approaches to seed the lateral single crystal growth: (1) utilize the Gibbs-Thomson eutectic temperature depression at the tip of an amorphous GeSn nanotaper for selective nucleation; (2) laser-induced nucleation at one end of a GeSn strip. Either way, the crystallized Ge{sub 0.89}Sn{sub 0.11} is dominated by a single grain >18 μm long that forms optoelectronically benign twin boundaries with others grains. These pseudo single crystal, direct-band-gap Ge{sub 0.89}Sn{sub 0.11} patterns are suitable for monolithic 3D integration of active photonic devices on Si.

  18. Thermoelectric properties of Sn- and Pb-doped Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6}

    SciTech Connect (OSTI)

    Guo, Quansheng; Chan, Meghan; Kuropatwa, Bryan A.; Kleinke, Holger

    2014-11-14

    A variety of substitutions in Tl{sub 9}BiTe{sub 6} and Tl{sub 9}SbTe{sub 6} with Sn and Pb, amounting to 14 different samples, were performed by melting the stoichiometric amounts of elements at 923 K, followed by slow cooling. The pulverized powders were sintered using the hot-pressing technique. All samples were of single phase according to the powder X-ray diffraction patterns. Thermoelectric property measurements were performed to investigate the effects of Sn- and Pb-doping on the electrical conductivity, Seebeck coefficient, and thermal conductivity. Increasing the concentration of the dopants caused increases in electrical and thermal conductivity, while decreasing the Seebeck coefficient. Tl{sub 9}Bi{sub 0.90}Pb{sub 0.10}Te{sub 6} and Tl{sub 9}Bi{sub 0.85}Pb{sub 0.15}Te{sub 6} exhibited the highest power factor. The changes in lattice thermal conductivity were minor and did not follow a clear trend. Competitive ZT values were obtained for Tl{sub 9}Bi{sub 0.95}Sn{sub 0.05}Te{sub 6}, Tl{sub 9}Bi{sub 0.95}Pb{sub 0.05}Te{sub 6}, Tl{sub 9}Sb{sub 0.97}Sn{sub 0.03}Te{sub 6}, and Tl{sub 9}Sb{sub 0.95}Pb{sub 0.05}Te{sub 6}, namely 0.95, 0.94, 0.83, and 0.71 around 500 K, respectively. Higher dopant concentrations led to lower ZT values.

  19. Magnetic phase transitions and electrical switching in Gd5(Sn0.3Ge3.7) induced by magnetic field

    SciTech Connect (OSTI)

    Levin, E. M.

    2013-08-01

    Temperature and magnetic field dependences of the magnetization and electrical resistivity of zero-field-cooled (ZFC) Gd5(Sn0.3Ge3.7) with a distinctly layered crystal structure have been studied. The unit cell of Gd5Ge4-based compounds is formed by 2D-like fragments, so-called slabs. Between 4.2 and 17 K, ZFC Gd5(Sn0.3Ge3.7) shows an antiferromagnetic state [AFM(I)], which can be irreversibly transformed by a magnetic field to the ferromagnetic (FM) state. The critical magnetic field required for the irreversible AFM(I)-FM transition in Gd5(Sn0.3Ge3.7) at 4.2 K is 38 kOe, which is 2-fold larger than observed in Gd5Ge4, 19 kOe. Additionally, ZFC Gd5 Sn0.3Ge3.7) above ˜30K shows another antiferromagnetic state [AFM(II)], which can be reversibly transformed by a magnetic field to the FM state. The difference between FM(I) and AFM(II) states (phases) in Gd5(Sn0.3Ge3.7) can be attributed to the orientation of Gd magnetic moments, i.e., their orientation perpendicular or parallel to the slabs. In the temperature range of 17 K≤T≤30 K, both AFM(I) and FM(II) states (phases) may coexist in the alloy and can be irreversibly or reversibly transformed to the FM state. Magnetic phase transitions in Gd5(Sn0.3Ge3.7) are accompanied with reversible or irreversible switching between the low- [AFM(I) and AFM(II)] and high-resistivity (FM) states.

  20. Vanadium deep impurity level in diluted magnetic semiconductors Pb{sub 1-x-y}Sn{sub x}V{sub y}Te

    SciTech Connect (OSTI)

    Skipetrov, E. P. Golovanov, A. N.; Knotko, A. V.; Slyn'ko, E. I.; Slyn'ko, V. E.

    2012-06-15

    The crystal structure, Sn and V distribution over the length of single-crystal ingots, and galvanomagnetic effects in low magnetic fields (4.2 K {<=} T {<=} 300 K, B {<=} 0.07 T) in Pb{sub 1-x-y}Sn{sub x}V{sub y}Te alloys (x = 0.05-0.21, y {<=} 0.015) are studied. It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the Pb{sub 1-x-y}Sn{sub x}V{sub y}Te alloy upon varying the host composition is suggested.

  1. Antiproton Production in 11.5A GeV/c Au+Pb Nucleus-Nucleus Collisions

    SciTech Connect (OSTI)

    De Cataldo, G.; Giglietto, N.; Raino, A.; Spinelli, P.; Huang, H.Z.; Hill, J.C.; Libby, B.; Wohn, F.K.; Rabin, M.S.; Haridas, P.; Pless, I.A.; Van Buren, G.; Armstrong, T.A.; Lewis, R.A.; Reid, J.D.; Smith, G.A.; Toothacker, W.S.; Davies, R.; Hirsch, A.S.; Porile, N.T.; Rimai, A.; Scharenberg, R.P.; Srivastava, B.K.; Tincknell, M.L.; Greene, S.V.; Bennett, S.J.; Cormier, T.M.; Dee, P.; Fachini, P.; Kim, B.; Li, Q.; Li, Y.; Munhoz, M.G.; Pruneau, C.A.; Wilson, W.K.; Zhao, K.; Barish, K.N.; Bennett, M.J.; Chikanian, A.; Coe, S.D.; Diebold, G.E.; Finch, L.E.; George, N.K.; Kumar, B.S.; Lajoie, J.G.; Majka, R.D.; Nagle, J.L.; Pope, J.K.; Rotondo, F.S.; Sandweiss, J.; Slaughter, A.J.; Wolin, E.J.

    1997-11-01

    We present the first results from the E864 Collaboration on the production of antiprotons in 10{percent} central 11.5A GeV /c Au+Pb nucleus collisions at the Brookhaven Alternating Gradient Synchrotron. We report invariant multiplicities for antiproton production in the kinematic region 1.4{lt}y{lt}2.2 and 50{lt} p{sub T}{lt} 300 MeV/c , and compare our data with a first collision scaling model and previously published results from the E878 Collaboration. The differences between the E864 and E878 antiproton measurements and the implications for antihyperon production are discussed. {copyright} {ital 1997} {ital The American Physical Society}

  2. Energy dependence of {lambda} and {xi} production in central Pb+Pb collisions at 20A,30A,40A,80A, and 158A GeV measured at the CERN Super Proton Synchrotron

    SciTech Connect (OSTI)

    Alt, C.; Blume, C.; Bramm, R.; Dinkelaker, P.; Flierl, D.; Kliemant, M.; Kniege, S.; Lungwitz, B.; Meurer, C.; Mitrovski, M.; Renfordt, R.; Richard, A.; Schuster, T.; Stock, R.; Strabel, C.; Stroebele, H.; Utvic, M.; Wetzler, A.; Anticic, T.; Kadija, K.

    2008-09-15

    Results on {lambda},{lambda},{xi}{sup -}, and {xi}{sup +} production in central Pb+Pb reactions at 20A,30A,40A,80A, and 158A GeV are presented. The energy dependence of transverse mass spectra, rapidity spectra, and multiplicities is discussed. Comparisons to string hadronic models (UrQMD and HSD) and statistical hadron gas models are shown. Although the latter provide a reasonable description of all particle yields, the first class of models fails to match the {xi}{sup -} and {xi}{sup +} multiplicities.

  3. Bose-Einstein correlations of {pi}{sup -}{pi}{sup -} pairs in central Pb+Pb collisions at 20A,30A,40A,80A, and 158A GeV

    SciTech Connect (OSTI)

    Alt, C.; Blume, C.; Bramm, R.; Dinkelaker, P.; Flierl, D.; Kliemant, M.; Kniege, S.; Lungwitz, B.; Mitrovski, M.; Renfordt, R.; Schuster, T.; Stock, R.; Strabel, C.; Stroebele, H.; Wetzler, A.; Anticic, T.; Kadija, K.; Nicolic, V.; Susa, T.; Baatar, B.

    2008-06-15

    Measurements of Bose-Einstein correlations of {pi}{sup -}{pi}{sup -} pairs in central Pb+Pb collisions were performed with the NA49 detector at the CERN Super Proton Synchroton for beam energies of 20A,30A,40A,80A, and 158A GeV. Correlation functions were measured in the longitudinally comoving 'out-side-long' reference frame as a function of rapidity and transverse momentum in the forward hemisphere of the reaction. Radius and correlation strength parameters were obtained from fits of a Gaussian parametrization. The results show a decrease of the radius parameters with increasing transverse-momentum characteristic of strong radial flow in the pion source. No striking dependence on pion-pair rapidity or beam energy is observed. Static and dynamic properties of the pion source are obtained from simultaneous fits with a blast-wave model to radius parameters and midrapidity transverse-momentum spectra. Predictions of hydrodynamic and microscopic models of Pb+Pb collisions are discussed.

  4. Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped Pb1-xSnxTe

    SciTech Connect (OSTI)

    Zhong, Ruidan; He, Xugang; Schneeloch, J. A.; Zhang, Cheng; Liu, Tiansheng; Pletikosić, I.; Yilmaz, T.; Sinkovic, B.; Li, Qiang; Ku, Wei; Valla, T.; Tranquada, J. M.; Gu, Genda

    2015-05-29

    Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped Pb1-xSnxTe compounds that manifest huge bulk resistivities together with evidence consistent with the topological character of the surface states for x ≳ 0.35, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures beyond 20 K.

  5. Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 thin films and powders

    DOE Patents [OSTI]

    Boyle, Timothy J.

    1999-01-01

    A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

  6. Process for production of solution-derived (Pb,La)(Nb,Sn,Zr,Ti)O{sub 3} thin films and powders

    DOE Patents [OSTI]

    Boyle, T.J.

    1999-01-12

    A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O{sub 3} precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650 C and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures. 2 figs.

  7. Magnetic anisotropy induced by crystal distortion in Ge{sub 1−x}Mn{sub x}Te/PbTe//KCl (001) ferromagnetic semiconductor layers

    SciTech Connect (OSTI)

    Knoff, W. Łusakowski, A.; Domagała, J. Z.; Minikayev, R.; Taliashvili, B.; Łusakowska, E.; Pieniążek, A.; Szczerbakow, A.; Story, T.

    2015-09-21

    Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge{sub 1−x}Mn{sub x}Te with x = 0.14 grown by molecular beam epitaxy on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge{sub 1−x}Mn{sub x}Te layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.

  8. Electronic tuning of the transport properties of off-stoichiometric Pb{sub x}Sn{sub 1−x}Te thermoelectric alloys by Bi{sub 2}Te{sub 3} doping

    SciTech Connect (OSTI)

    Guttmann, Gilad M.; Dadon, David; Gelbstein, Yaniv

    2015-08-14

    The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations had motivated many researchers to seek for novel renewable energy conversion methods. Thermoelectric direct conversion of thermal into electrical energies is such a method, in which common compositions include IV-VI semiconducting compounds (e.g., PbTe and SnTe) and their alloys. For approaching practical thermoelectric devices, the current research is focused on electronic optimization of off-stoichiometric p-type Pb{sub x}Sn{sub 1−x}Te alloys by tuning of Bi{sub 2}Te{sub 3} doping and/or SnTe alloying levels, while avoiding the less mechanically favorable Na dopant. It was shown that upon such doping/alloying, higher ZTs, compared to those of previously reported undoped Pb{sub 0.5}Sn{sub 0.5}Te alloy, were obtained at temperatures lower than 210–340 °C, depending of the exact doping/alloying level. It was demonstrated that upon optimal grading of the carrier concentration, a maximal thermoelectric efficiency enhancement of ∼38%, compared to that of an undoped material, is expected.

  9. Search for Charged Strange Quark Matter Produced in 11.5{ital A} GeV/{ital c} Au+Pb Collisions

    SciTech Connect (OSTI)

    De Cataldo, G.; Giglietto, N.; Raino, A.; Spinelli, P.; Huang, H.Z.; Hill, J.C.; Hoversten, R.A.; Libby, B.; Wohn, F.K.; Rabin, M.S.; Haridas, P.; Pless, I.A.; Van Buren, G.; Armstrong, T.A.; Lewis, R.A.; Reid, J.D.; Smith, G.A.; Toothacker, W.S.; Davies, R.; Hirsch, A.S.; Porile, N.T.; Rimai, A.; Scharenberg, R.P.; Srivastava, B.K.; Tincknell, M.L.; Lainis, T.; Greene, S.V.; Bennett, S.J.; Cormier, T.M.; Dee, P.; Fachini, P.; Kim, B.; Li, Q.; Munhoz, M.G.; Pruneau, C.A.; Wilson, W.K.; Zhao, K.; Barish, K.N.; Bennett, M.J.; Chikanian, A.; Coe, S.D.; Diebold, G.E.; Finch, L.E.; George, N.K.; Kumar, B.S.; Lajoie, J.G.; Majka, R.D.; Nagle, J.L.; Pope, J.K.; Rotondo, F.S.; Sandweiss, J.; Slaughter, A.J.; Wolin, E.J.; Xu, Z.

    1997-11-01

    We present results of a search for strange quark matter (strangelets) in 11.5A GeV /c Au+Pb collisions from the 1994 and 1995 runs of experiment E864 at Brookhaven{close_quote}s Alternating Gradient Synchrotron. We observe no strangelet candidates and set a 90{percent} confidence level upper limit of approximately 3{times}10{sup {minus}8} per 10{percent} central interaction for the production of {vert_bar}Z{vert_bar}=1 and {vert_bar}Z{vert_bar}=2 strangelets over a large mass range and with metastable lifetimes of about 50ns or more. These results place constraints primarily on quark-gluon plasma based production models for strangelets. {copyright} {ital 1997} {ital The American Physical Society}

  10. GE Global Research Contact | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Contact Us Looking for more details? Please contact one of these individuals or visit the Newsroom for the latest information. Home > About GE Global Research > Contact Us GE Global Research 1 Research Circle, Niskayuna, NY 12309, USA Todd Alhart +1.518.387.7914 todd.alhart@ge.com Communications and Public Relations GE Brazil Technology Center Rua Trinta e Seis (Praia dos Coqueiros), s/n, Supl. Ilha do Bom Jesus 840 Ilha do Fundão - Cidade Universitária Rio de Janeiro, RJ - CEP 21941-593

  11. Average and local structure of the Pb-free ferroelectric perovskites (Sr,Sn)TiO3 and (Ba,Ca,Sn)TiO3

    SciTech Connect (OSTI)

    Laurita, Geneva; Page, Katharine; Suzuki, Shoichiro; Seshadri, Ram

    2015-12-16

    The characteristic structural off -centering of Pb2+ in oxides, associated with its 6s2 lone pair, allows it to play a dominant role in polar materials, and makes it a somewhat ubiquitous component of ferroelectrics. In this work, we examine the compounds Sr0.9Sn0.1TiO3 and Ba0.79Ca0.16Sn0.05TiO3 using neutron total scattering techniques with data acquired at di erent temperatures. In these compounds, previously reported as ferroelectrics, Sn2+ appears to display some of the characteristics of Pb2+. We compare the local and long-range structures of the Sn2+-substituted compositions to the unsubstituted parent compounds SrTiO3 and BaTiO3. Lastly, we find that even at these small substitution levels, the Sn2+ lone pairs drive the local ordering behavior, with the local structure of both compounds more similar to the structure of PbTiO3 rather than the parent compounds.

  12. Studies of waste-canister compatibility. [Waste forms: Al-Si and Pb-Sn matrix alloys, FUETAP, glass, Synroc D, and waste particles coated with carbon or carbon plus SiC

    SciTech Connect (OSTI)

    McCoy, H.E.

    1983-01-01

    Compatibility studies were conducted between 7 waste forms and 15 potential canister structural materials. The waste forms were Al-Si and Pb-Sn matrix alloys, FUETAP, glass, Synroc D, and waste particles coated with carbon or carbon plus silicon carbide. The canister materials included carbon steel (bare and with chromium or nickel coatings), copper, Monel, Cu-35% Ni, titanium (grades 2 and 12), several Inconels, aluminum alloy 5052, and two stainless steels. Tests of either 6888 or 8821 h were conducted at 100 and 300/sup 0/C, which bracket the low and high limits expected during storage. Glass and FUETAP evolved sulfur, which reacted preferentially with copper, nickel, and alloys of these metals. The Pb-Sn matrix alloy stuck to all samples and the carbon-coated particles to most samples at 300/sup 0/C, but the extent of chemical reaction was not determined. Testing for 0.5 h at 800/sup 0/C was included because it is representative of a transportation accident and is required of casks containing nuclear materials. During these tests (1) glass and FUETAP evolved sulfur, (2) FUETAP evolved large amounts of gas, (3) Synroc stuck to titanium alloys, (4) glass was molten, and (5) both matrix alloys were molten with considerable chemical interactions with many of the canister samples. If this test condition were imposed on waste canisters, it would be design limiting in many waste storage concepts.

  13. Local density functional calculations of the electronic structures of the intermetallic systems U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2}

    SciTech Connect (OSTI)

    Matar, S.F.; Chevalier, B.; Etourneau, J.; Eyert, V.

    1997-02-05

    The electronic structures of U{sub 2}Fe{sub 2}Sn and UFe{sub 2}Ge{sub 2} are self-consistently calculated within the local density functional theory using the augmented spherical wave (ASW) method. Calculations are scalar relativistic. The experimentally observed Pauli paramagnetic behavior of the two systems is accounted for and the influence of hybridization between the different l-states on the chemical bonding is discussed from the site-projected densities of states (DOS) as well as from the modulation of the DOS by the sign and magnitude of the overlap integral, i.e., with the so-called COOP. From this, we propose a mechanism for the evolution of bonding within the series to which the two compounds belong. 12 refs., 3 figs.

  14. Pull strength evaluation of Sn-Pb solder joints made to Au-Pt-Pd and Au thick film structures on low-temperature co-fired ceramic -final report for the MC4652 crypto-coded switch (W80).

    SciTech Connect (OSTI)

    Uribe, Fernando; Vianco, Paul Thomas; Zender, Gary L.

    2006-06-01

    A study was performed that examined the microstructure and mechanical properties of 63Sn-37Pb (wt.%, Sn-Pb) solder joints made to thick film layers on low-temperature co-fired (LTCC) substrates. The thick film layers were combinations of the Dupont{trademark} 4596 (Au-Pt-Pd) conductor and Dupont{trademark} 5742 (Au) conductor, the latter having been deposited between the 4596 layer and LTCC substrate. Single (1x) and triple (3x) thicknesses of the 4596 layer were evaluated. Three footprint sizes were evaluated of the 5742 thick film. The solder joints exhibited excellent solderability of both the copper (Cu) lead and thick film surface. In all test sample configurations, the 5742 thick film prevented side wall cracking of the vias. The pull strengths were in the range of 3.4-4.0 lbs, which were only slightly lower than historical values for alumina (Al{sub 2}O{sub 3}) substrates. General (qualitative) observations: (a) The pull strength was maximized when the total number of thick film layers was between two and three. Fewer that two layers did not develop as strong of a bond at the thick film/LTCC interface; more than three layers and of increased footprint area, developed higher residual stresses at the thick film/LTCC interface and in the underlying LTCC material that weakened the joint. (b) Minimizing the area of the weaker 4596/LTCC interface (e.g., larger 5742 area) improved pull strength. Specific observations: (a) In the presence of vias and the need for the 3x 4596 thick film, the preferred 4596:5742 ratio was 1.0:0.5. (b) For those LTCC components that require the 3x 4596 layer, but do not have vias, it is preferred to refrain from using the 5742 layer. (c) In the absence of vias, the highest strength was realized with a 1x thick 5742 layer, a 1x thick 4596 layer, and a footprint ratio of 1.0:1.0.

  15. Lead (Pb)-Free Solder Applications

    SciTech Connect (OSTI)

    VIANCO,PAUL T.

    2000-08-15

    Legislative and marketing forces both abroad and in the US are causing the electronics industry to consider the use of Pb-free solders in place of traditional Sn-Pb alloys. Previous case studies have demonstrated the satisfactory manufacturability and reliability of several Pb-free compositions for printed circuit board applications. Those data, together with the results of fundamental studies on Pb-free solder materials, have indicated the general feasibility of their use in the broader range of present-day, electrical and electronic components.

  16. Wave soldering with Pb-free solders

    SciTech Connect (OSTI)

    Artaki, I.; Finley, D.W.; Jackson, A.M.; Ray, U.; Vianco, P.T.

    1995-07-01

    The manufacturing feasibility and attachment reliability of a series of newly developed lead-free solders were investigated for wave soldering applications. Some of the key assembly aspects addressed included: wettability as a function of board surface finish, flux activation and surface tension of the molten solder, solder joint fillet quality and optimization of soldering thermal profiles. Generally, all new solder formulations exhibited adequate wave soldering performance and can be considered as possible alternatives to eutectic SnPb for wave soldering applications. Further process optimization and flux development is necessary to achieve the defect levels associated with the conventional SnPb process.

  17. Thermal conductivity of bulk and nanowire Mg₂SixSn1–x alloys from first principles

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (κ) of the thermoelectric materials, Mg₂Si, Mg₂Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires κ is lower than its bulk value by 30%, 20%, and 20% for Mg₂Si₀.₆Sn₀.₄, Mg₂Si, and Mg₂Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, κmore » of Mg₂SixSn1–x is less sensitive to nanostructuring size effects than SixGe1–x, but more sensitive than PbTexSe1–x. This suggests that further improvement of Mg₂SixSn1–x as a nontoxic thermoelectric may be possible.« less

  18. The A-site driven phase transition procedure of (Pb{sub 0.97}La{sub 0.02})(Zr{sub 0.42}Sn{sub 0.40}Ti{sub 0.18})O{sub 3} ceramics: An evidence from electronic structure variation

    SciTech Connect (OSTI)

    Chen, X.; Jiang, P. P; Duan, Z. H.; Hu, Z. G. Chu, J. H.; Chen, X. F.; Wang, G. S.; Dong, X. L.

    2013-11-04

    The transition of (Pb{sub 0.97}La{sub 0.02})(Zr{sub 0.42}Sn{sub 0.40}Ti{sub 0.18})O{sub 3} (PLZST) ceramic has been investigated by temperature-dependent X-ray diffraction (XRD) and spectroscopic ellipsometry (SE). The rhombohedral and tetragonal symmetries are confirmed by XRD analysis. Two interband transitions (E{sub cp1} and E{sub cp2}) located at about 3.7 and 5.2?eV can be derived from the second derivative of the complex dielectric functions using the standard critical point (SCP) model. Except for the negative temperature coefficient parts, the transitions present additional parts corresponding to appearance of the antiferroelectric (AFE) phase. The phenomena can be attributed to variation of the electronic structure during A-site driven phase transition.

  19. Thermal conductivity of bulk and nanowire Mg₂SixSn1–x alloys from first principles

    SciTech Connect (OSTI)

    Li, Wu; Lindsay, L.; Broido, D. A.; Stewart, Derek A.; Mingo, Natalio

    2012-11-29

    The lattice thermal conductivity (κ) of the thermoelectric materials, Mg₂Si, Mg₂Sn, and their alloys, are calculated for bulk and nanowires, without adjustable parameters. We find good agreement with bulk experimental results. For large nanowire diameters, size effects are stronger for the alloy than for the pure compounds. For example, in 200 nm diameter nanowires κ is lower than its bulk value by 30%, 20%, and 20% for Mg₂Si₀.₆Sn₀.₄, Mg₂Si, and Mg₂Sn, respectively. For nanowires less than 20 nm thick, the relative decrease surpasses 50%, and it becomes larger in the pure compounds than in the alloy. At room temperature, κ of Mg₂SixSn1–x is less sensitive to nanostructuring size effects than SixGe1–x, but more sensitive than PbTexSe1–x. This suggests that further improvement of Mg₂SixSn1–x as a nontoxic thermoelectric may be possible.

  20. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Formation Du... grid 2014.12.09 GE, Utility, Government, and Academia Partner on Microgrid Project Purdue-GE Adv Mfg Screen Dress jpg 2014.12.04 Purdue, GE to collaborate on ...

  1. Phase diagram and incommensurate antiferroelectric structure in (Pb{sub 1?1.5x}La{sub x})(Zr{sub 0.42}Sn{sub 0.40}Ti{sub 0.18})O{sub 3} ceramics discovered by band-to-band optical transitions

    SciTech Connect (OSTI)

    Ding, X. J.; Xu, L. P.; Hu, Z. G. Chu, J. H.; Chen, X. F.; Wang, G. S.; Dong, X. L.

    2014-09-29

    Optical properties and phase transitions of (Pb{sub 1?1.5x}La{sub x})(Zr{sub 0.42}Sn{sub 0.40}Ti{sub 0.18})O{sub 3} (PLZST 100x/42/40/18) ceramics with different compositions have been investigated by temperature dependent spectroscopic ellipsometry. Two interband critical points (E{sub cp1} and E{sub cp2}) located at about 3.9 and 5.1?eV can be obtained by fitting standard line shapes to the second derivatives of the complex dielectric functions. Based on the band-to-band transitions, the phase diagram of PLZST ceramics can be well presented. Moreover, a peculiar incommensurate antiferroelectric state has been found to exist above the temperature of the normal commensurate antiferroelectric tetragonal structure. It can be stable below Curie temperature, evolving slowly with decreasing temperature towards the commensurate structure, which is due to strong pinning of incommensurate domain walls. The phenomena can result from a competition between ferroelectric ordering and antiferroelectric ordering caused by the lanthanum modification.

  2. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About GE Global Research > Leadership Leadership GE Global Research Centers rely on the guidance of visionary leaders with deep technical knowledge on the ground at each of our sites. A photo of Vic Abate Vic Abate Chief Technology Officer GE Global Research As senior vice president and chief technology officer for GE, Vic is responsible for one of the world's largest and most diversified industrial research and technology organizations. Vic leads GE's 50,000 engineers and scientists and G...

  3. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new capabilities in 3D Printing and higher jet engine efficiency More GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost More GE's US1 billion investment in ...

  4. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  5. GE Global Research Careers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers The best and brightest minds in science and technology make breakthroughs daily at GE Global Research. Are you ready to join our team? Job Search Location Location Bangalore, India Dhahran, Saudi Arabia Munich, Germany Niskayuna, USA Oklahoma City, USA Rio de Janeiro, Brazil Shanghai, China Tirat Carmel, Israel Keyword Search Jobs » View All Jobs Keep in Touch With GE Global Research Careers Home > Careers Why GE careers_why_GE GE works on things that matter. The best people and the

  6. GE Capital Partnership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies collaborating with Global Research

  7. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Locations GE Global Research is innovating around the clock. Select one of our locations to learn more about operations there.GE Global Research is innovating around the clock. Select a location to learn more about our operations. Home > Locations GE Global Research is ALWAYS OPEN Already know about our locations? Experience a special look at a day in our life around the world! See What We're Doing Dhahran, Saudi Arabia Founded: 2015 Employees: 15 Focus Areas: Material Characterization,

  8. GE Researchers Tackle Three Unimpossible Missions | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to ... Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers ...

  9. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Researcher: Putting GE Beliefs into Action Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researcher: Putting GE Beliefs into Action Joseph Vinciquerra 2015.01.30 Several weeks ago I had the privilege of attending the 2015 Global Leadership Meeting held near Lake George, New York. As a first time attendee, I

  10. GE and Quirky | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to inspire new...

  11. Measurement of jet fragmentation in PbPb and pp collisions at $\\sqrt{s_{NN}}=2.76$ TeV

    SciTech Connect (OSTI)

    Chatrchyan, Serguei; et al.,

    2014-08-01

    The jet fragmentation function of inclusive jets with transverse momentum pt above 100 GeV in PbPb collisions has been measured using reconstructed charged particles with pt above 1 GeV in a cone of radius 0.3 around the jet axis. A data sample of PbPb collisions collected in 2011 at a nucleon-nucleon center-of-mass energy of sqrt(s[NN]) = 2.76 TeV corresponding to an integrated luminosity of 150 inverse microbarns is used. The results for PbPb collisions as a function of collision centrality and jet transverse momentum are compared to reference distributions based on pp data collected at the same center-of-mass energy in 2013, with an integrated luminosity of 5.3 inverse picobarns. A centrality-dependent modification of the fragmentation function is found. For the most central collisions, a significant enhancement is observed in the PbPb / pp fragmentation function ratio for charged particles with pt less than 3 GeV. This enhancement is observed for all jet pt bins studied.

  12. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Rail Networks Are Getting Smarter Sources: 2012 GE Annual Report (page 12); Norfolk Southern 2010 sustainability reporter (page 17) North American Freight Railroad... Read More » The GE Store for Technology is Open for Business Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of

  13. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies... Read More » How Green Is Green? GE's Global Research Center's Ecoassessment Center of Excellence was created to study the impact of GE products and

  14. Connecting | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting Through software, the Industrial Internet and the sharing of ideas, we're bringing people together all around the world. Home > Impact > Connecting GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and... Read More » Predix(tm): GE's Software Platform for the Industrial Internet A cornerstone of the GE Software Center efforts to advance the Industrial

  15. Curing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a... Read More » GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE

  16. Proteus-SN user manual

    SciTech Connect (OSTI)

    Shemon, Emily R.; Smith, Micheal A.; Lee, Changho

    2015-07-31

    This user manual describes how to set up a neutron transport simulation with the PROTEUS-SN code. A companion methodology manual describes the theory and algorithms within PROTEUS-SN.

  17. Powering | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE have pioneered a technical breakthrough called DCJ... Read More Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in ...

  18. Predix | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Predix(tm): GE's Software Platform for the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Predix(tm): GE's Software Platform for the Industrial Internet A cornerstone of the GE Software Center efforts to advance the Industrial Internet is Predix(tm), GE's software platform for the Industrial

  19. The low-temperature form of calcium gold stannide, CaAuSn

    SciTech Connect (OSTI)

    Lin, Qisheng; Corbett, John D.

    2014-07-19

    The EuAuGe-type CaAuSn phase has been synthesized and single-crystal X-ray diffraction analysis reveals that it has an ortho­rhom­bic symmetry (space group Imm2), with a = 4.5261 (7) Å, b = 7.1356 (11) Å and c = 7.8147 (11) Å. The structure features puckered layers that are connected by homoatomic Au-Au and Sn-Sn inter­layer bonds. This structure is one of the two parent structures of its high-temperature polymorph (ca 873 K), which is an inter­growth structure of the EuAuGe- and SrMgSi-type structures in a 2:3 ratio.

  20. GE Get Fit | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Get Fit Program Attracts Adventurers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Get Fit Program Attracts Adventurers Jim Bray 2012.10.02 In the past few weeks, we've shared #GetFit stories from our Global Research sites in Niskayuna, San Ramon and Shanghai. GE Healthcare's #getfit campaign is a social media

  1. What is the GE store |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  2. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    SciTech Connect (OSTI)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead to elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.

  3. Photonics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > The Photonics Lab at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE Global Research, introduces photonics and shares the lab's work on innovative ways to use light. You Might Also Like

  4. SN Power Brasil | Open Energy Information

    Open Energy Info (EERE)

    SN Power Brasil Jump to: navigation, search Name: SN Power Brasil Place: Rio de Janeiro, Rio de Janeiro, Brazil Zip: 22290-160 Sector: Renewable Energy Product: Brazilian...

  5. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Laura Bauer

  6. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Laura Bauer

  7. Thermal properties of UPdSn and UCuSn

    SciTech Connect (OSTI)

    Kawanaka, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section; Nakotte, H. [Electrotechnical Lab., Tsukuba (Japan). Electron Physics Section]|[Los Alamos National Lab., NM (United States). Manual Lujan Jr. Neutron Scattering Center; Brueck, E.; Prokes, K.; Kim-Ngan, N.H. [Univ. of Amsterdam (Netherlands). Van der Waals-Zeeman Inst.; Takabatake, T.; Fujii, H. [Hiroshima Univ., Highashi-Hiroshima (Japan). Faculty of Integrated Arts and Sciences; Sakurai, J. [Toyama Univ. (Japan). Faculty of Science

    1996-09-01

    The authors report on the specific-heat and the thermopower of UPdSn and UCuSn, both of which order antiferromagnetically at low temperatures. Both compounds show similar behavior in the specific heat, and the large magnetic-entropy changes around T{sub N} are evidence for a large degree of 5f-electron localizations. The thermopower, on the other hand, behaves very different in the two compounds. While prominent features are seen in the temperature dependence of the thermopower of UCuSn, only weak changes are observed for UPdSn. This may indicate that, for these compounds, the thermopower response is due to mechanisms other than purely magnetic ones.

  8. Correlations between jets and charged particles in PbPb and pp collisions at $$ \\sqrt{s_{\\mathrm{NN}}}=2.76 $$ TeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khachatryan, Vardan

    2016-02-23

    In this study, the quark-gluon plasma is studied via medium-induced changes to correlations between jets and charged particles in PbPb collisions compared to pp reference data. This analysis uses data sets from PbPb and pp collisions with integrated luminosities of 166 inverse microbarns and 5.3 inverse picobarns, respectively, collected atmore » $$ \\sqrt{s_{\\mathrm{NN}}}=2.76 $$ TeV. The angular distributions of charged particles are studied as a function of relative pseudorapidity (Δη) and relative azimuthal angle (ΔΦ) with respect to reconstructed jet directions. Charged particles are correlated with all jets with transverse momentum (pT) above 120 GeV, and with the leading and subleading jets (the highest and second-highest in pT, respectively) in a selection of back-to-back dijet events. Modifications in PbPb data relative to pp reference data are characterized as a function of PbPb collision centrality and charged particle pT. A centrality-dependent excess of low-pT particles is present for all jets studied, and is most pronounced in the most central events. This excess of low-pT particles follows a Gaussian-like distribution around the jet axis, and extends to large relative angles of Δη ≈ 1 and ΔΦ ≈ 1.« less

  9. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  10. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  11. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  12. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  13. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  14. Interferometry radii in heavy-ion collisions at {radical}(s)=200 GeV and 2.76 TeV

    SciTech Connect (OSTI)

    Bozek, Piotr

    2011-04-15

    The expansion of the fireball created in Au-Au collisions at {radical}(s)=200 GeV and Pb-Pb collisions at 2.76 TeV is modelled using relativistic viscous hydrodynamics. The experimentally observed interferometry radii are well reproduced. Additional pre-equilibrium flow slightly improves the results for the lower energies studied.

  15. Working at GE Global Research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists, inspiration can come from a rock or a sunset or a supercomputer. But mostly it comes from our dream of what the future can be. A world that's cleaner, greener, more efficient, more intelligent and more connected, where people have greater access to essentials like energy, water and healthcare. A better world. Innovate GE Global

  16. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  17. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  18. Measurement of prompt psi(2S) to J/psi yield ratios in PbPb and pp collisions at sqrt(s[NN]) = 2.76 TeV

    SciTech Connect (OSTI)

    Khachatryan, V. et al.

    2014-12-01

    The ratio between the prompt psi(2S) and J/psi yields, reconstructed via their decays into muon pairs, is measured in PbPb and pp collisions at sqrt(s[NN]) = 2.76 TeV. The analysis is based on PbPb and pp data samples collected by CMS at the LHC, corresponding to integrated luminosities of 150 inverse microbarns and 5.4 inverse picobarns, respectively. The double ratio of measured yields, (N[psi(2S)]/N[J/psi])[PbPb] / (N[psi(2S)]/ N[J/psi])[pp], is computed in three PbPb collision centrality bins and two kinematic ranges: one at midrapidity, abs(y) < 1.6, covering the transverse momentum range 6.5 < pt < 30 GeV/c, and the other at forward rapidity, 1.6 < abs(y) < 2.4, extending to lower pt values, 3 < pt < 30 GeV/c. The centrality-integrated double ratio changes from 0.45 +/- 0.13 (stat) +/- 0.07 (syst) in the first range to 1.67 +/- 0.34 (stat) +/- 0.27 (syst) in the second. This difference is most pronounced in the most central collisions.

  19. Structure of ??Pb populated in ??Pb + ??Pb deep-inelastic collisions*

    SciTech Connect (OSTI)

    Shand, C. M. [Univ. of Surrey, Guildford (United Kingdom); Wilson, E. [Univ. of Surrey, Guildford (United Kingdom); Podolyk, Zs. [Univ. of Surrey, Guildford (United Kingdom); Grawe, H. [GSI Helmholtzzentrum fur Schwerionenforschung GmbH, Darmstadt (Germany); Brown, B. A. [Michigan State Univ., East Lansing, MI (United States); Fornal, B. [The Henryk Niewodniczanski Institute of Nuclear Physics, Krakow (Poland); Janssens, R. V. F. [Argonne National Lab. (ANL), Argonne, IL (United States); Bowry, M. [Univ. of Surrey, Guildford (United Kingdom); Bunce, M. [Univ. of Surrey, Guildford (United Kingdom); Carpenter, M. P. [Argonne National Lab. (ANL), Argonne, IL (United States); Carroll, R. J. [Univ. of Surrey, Guildford (United Kingdom); Chiara, C. J. [Argonne National Lab. (ANL), Argonne, IL (United States); Univ. of Maryland, College Park, MD (United States); Cieplicka-Ory?czak, N. [The Henryk Niewodniczanski Institute of Nuclear Physics, Krakow (Poland); Deo, A. Y. [Univ. of Massachusetts, Lowell, MA (United States); Dracoulis, G. D. [Australian National Univ., Canberra, ACT (Australia); Hoffman, C. R. [Argonne National Lab. (ANL), Argonne, IL (United States); Kempley, R. S. [Univ. of Surrey, Guildford (United Kingdom); Kondev, F. G. [Argonne National Lab. (ANL), Argonne, IL (United States); Lane, G. J. [Australian National Univ., Canberra, ACT (Australia); Lauritsen, T. [Argonne National Lab. (ANL), Argonne, IL (United States); Lotay, G. [Univ. of Surrey, Guildford (United Kingdom); National Physics Lab., Teddington (United Kingdom); Reed, M. W. [Univ. of Surrey, Guildford (United Kingdom); Regan, P. H. [Univ. of Surrey, Guildford (United Kingdom); National Physics Lab., Teddington (United Kingdom); Rodriguez-Triguero, C. [Univ. of Brighton, Brighton (United Kingdom); Seweryniak, D. [Argonne National Lab. (ANL), Argonne, IL (United States); Szpak, B. [The Henryk Niewodniczanski Institute of Nuclear Physics, Krakow (Poland); Walker, P. M. [Univ. of Surrey, Guildford (United Kingdom); Zhu, S. [Argonne National Lab. (ANL), Argonne, IL (United States)

    2015-01-01

    The yrast structure of 207Pb above the 13/2+ isomeric state has been investigated in deep-inelastic collisions of 208Pb and 208Pb at ATLAS, Argonne National Laboratory. New and previously observed transitions were measured using the Gammasphere detector array. The level scheme of 207Pb is presented up to ~ 6 MeV, built using coincidence and ?-ray intensity analyses. In addition, the spin and parity assignments of states were made, based on angular distributions and comparisons to shell model calculations.

  20. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the... Read More » Advanced Laser Manufacturing Tools Deliver Higher Performance In a research lab looking far, far into the future, a team of scientists

  1. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » Bringing a Digital Mindset to Manufacturing The digital age will provide manufacturing insights that will save money and transform how we work across

  2. Curing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Invention Factory: How Will We Live Forever? In this episode of Invention Factory - a partnership between GE and Vice - we probe the cutting edge of medical... Read More » Invention Factory: How Will Mind Overcome Matter? In this episode of Invention Factory - a partnership between General Electric and Vice - we explore how

  3. Invention | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Meet our people » Stump the Scientist Ask us your question about science or technology. Then check back often to see what our scientists say! Leave them speechless » Edison's Desk Blog Curious about researchers'

  4. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  5. GE MEMS for LTE Advanced Mobile Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE MEMS Switch Technology Demonstrates Performance Which Could Meet Demands for ... longer battery life, and the advanced RF designs required of LTE-Advanced devices. ...

  6. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  7. Israel: A Source of Innovation for GE |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  8. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  9. Baryon number and electric charge fluctuations in Pb+Pb collisions at relativistic energies

    SciTech Connect (OSTI)

    Konchakovski, V. P.; Gorenstein, M. I.; Bratkovskaya, E. L.; Stoecker, H.

    2006-12-15

    Event-by-event fluctuations of the net baryon number and electric charge in nucleus-nucleus collisions are studied in Pb+Pb at SPS energies within the Hadron-String Dynamics (HSD) transport model. We reveal an important role of the fluctuations in the number of target nucleon participants. They strongly influence all measured fluctuations even in the samples of events with rather rigid centrality trigger. This fact can be used to check different scenarios of nucleus-nucleus collisions by measuring the multiplicity fluctuations as a function of collision centrality in fixed kinematical regions of the projectile and target hemispheres. The HSD results for the event-by-event fluctuations of electric charge in central collisions at 20A,30A,40A,80A, and 158A GeV are in a good agreement with the NA49 experimental data and considerably larger than expected in a quark-gluon plasma. This demonstrates that the distortions of the initial fluctuations by the hadronization phase and, in particular, by the final resonance decays dominate the observable fluctuations.

  10. Centrality dependence of dihadron correlations and azimuthal anisotropy harmonics in PbPb collisions at $\\sqrt{s_{NN}}=2.76$ TeV

    SciTech Connect (OSTI)

    Chatrchyan, Serguei; et al.

    2012-05-01

    Measurements from the CMS experiment at the LHC of dihadron correlations for charged particles produced in PbPb collisions at a nucleon-nucleon centre-of-mass energy of 2.76 TeV are presented. The results are reported as a function of the particle transverse momenta (pt) and collision centrality over a broad range in relative pseudorapidity [Delta(eta)] and the full range of relative azimuthal angle [Delta(phi)]. The observed two-dimensional correlation structure in Delta(eta) and Delta(phi) is characterised by a narrow peak at (Delta(eta), Delta(phi)) approximately (0, 0) from jet-like correlations and a long-range structure that persists up to at least |Delta(eta)| = 4. An enhancement of the magnitude of the short-range jet peak is observed with increasing centrality, especially for particles of pt around 1-2 GeV/c. The long-range azimuthal dihadron correlations are extensively studied using a Fourier decomposition analysis. The extracted Fourier coefficients are found to factorise into a product of single-particle azimuthal anisotropies up to pt approximately 3-3.5 GeV/c for at least one particle from each pair, except for the second-order harmonics in the most central PbPb events. Various orders of the single-particle azimuthal anisotropy harmonics are extracted for associated particle pt of 1-3 GeV/c, as a function of the trigger particle pt up to 20 GeV/c and over the full centrality range.

  11. Mechanical properties of Pb-free solder alloys on thick film hybrid microcircuits

    SciTech Connect (OSTI)

    Hernandez, C.L.; Vianco, P.T.; Rejent, J.A.; Hosking, F.M.

    1998-03-10

    The technology drivers of the electronics industry continue to be systems miniaturization and reliability, in addition to addressing a variety of important environmental issues. Although the Sn-Pb eutectic alloy is widely used as a joining material in the electronics industry, it has drawn environmental concern due to its Pb content. The solder acts both as an electrical and mechanical connection within the different packaging levels in an electronic device. New Pb-free solders are being developed at Sandia National Laboratories. The alloys are based on the Sn-Ag alloy, having Bi and Au additions. Prototype hybrid microcircuit (HMC) test vehicles have been assembled to evaluate Pb-free solders for Au-Pt-Pd thick film soldering. The test components consist of a variety of dummy chip capacitors and leadless ceramic chip carriers (LCCC`s). The mechanical properties of the joints were evaluated. The reflow profiles and the solid state intermetallic formation reaction will also be presented. Improved solder joint manufacturability and increased fatigue resistance solder alloys are the goals of these materials.

  12. Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S., India, China, Germany, Brazil and Israel, we have more than 300 collaborations ... View the Popular Science article to learn more. GE's Israel Technology Center: Advancing ...

  13. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  14. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... For example, GE flow meter products will be developed incorporating the Swept Frequency Acoustic Interferometry (SFAI) metering technology incubated in an alliance between Chevron ...

  15. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  16. Flying Cars | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  17. Modification of jet shapes in PbPb collisions at sqrt(s{NN}) equals 2.76 TeV

    SciTech Connect (OSTI)

    Chatrchyan, Serguei; et al,

    2014-03-01

    The first measurement of jet shapes, defined as the fractional transverse momentum radial distribution, for inclusive jets produced in heavy-ion collisions is presented. Data samples of PbPb and pp collisions, corresponding to integrated luminosities of 150 inverse microbarns and 5.3 inverse picobarns respectively, were collected at a nucleon-nucleon centre-of-mass energy of sqrt(s[NN]) = 2.76 TeV with the CMS detector at the LHC. The jets are reconstructed with the anti-kt algorithm with a distance parameter R=0.3, and the jet shapes are measured for charged particles with transverse momentum pt> 1 GeV. The jet shapes measured in PbPb collisions in different collision centralities are compared to reference distributions based on the pp data. A centrality-dependent modification of the jet shapes is observed in the more central PbPb collisions, indicating a redistribution of the energy inside the jet cone. This measurement provides information about the parton shower mechanism in the hot and dense medium produced in heavy-ion collisions.

  18. Elliptic and triangular flow in p-Pb and peripheral Pb-Pb collisions from parton scatterings

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bzdak, Adam; Ma, Guo-Liang

    2014-12-15

    Using a multiphase transport model (AMPT) we calculate the elliptic v₂ and triangular v₃ Fourier coefficients of the two-particle azimuthal correlation function in proton-nucleus (p-Pb) and peripheral nucleus-nucleus (Pb-Pb) collisions. Our results for v₃ are in a good agreement with the CMS data collected at the Large Hadron Collider. The v₂ coefficient is very well described in p-Pb collisions and is underestimated for higher transverse momenta in Pb-Pb interactions. The characteristic mass ordering of v₂ in p-Pb is reproduced, whereas for v₃, this effect is not observed. We further predict the pseudorapidity dependence of v₂ and v₃ in p-Pb andmore » observe that both are increasing when going from a proton side to a Pb-nucleus side. Predictions for the higher-order Fourier coefficients, v₄ and v₅, in p-Pb are also presented.« less

  19. Elliptic and triangular flow in p-Pb and peripheral Pb-Pb collisions from parton scatterings

    SciTech Connect (OSTI)

    Bzdak, Adam; Ma, Guo-Liang

    2014-12-15

    Using a multiphase transport model (AMPT) we calculate the elliptic v? and triangular v? Fourier coefficients of the two-particle azimuthal correlation function in proton-nucleus (p-Pb) and peripheral nucleus-nucleus (Pb-Pb) collisions. Our results for v? are in a good agreement with the CMS data collected at the Large Hadron Collider. The v? coefficient is very well described in p-Pb collisions and is underestimated for higher transverse momenta in Pb-Pb interactions. The characteristic mass ordering of v? in p-Pb is reproduced, whereas for v?, this effect is not observed. We further predict the pseudorapidity dependence of v? and v? in p-Pb and observe that both are increasing when going from a proton side to a Pb-nucleus side. Predictions for the higher-order Fourier coefficients, v? and v?, in p-Pb are also presented.

  20. Measurement of charged-particle spectra in Pb+Pb collisions at s N N = 2.76 $$ \\sqrt{s_{\\mathrm{NN}}}=2.76 $$ TeV with the ATLAS detector at the LHC

    SciTech Connect (OSTI)

    Aad, G.; Abbott, B.; Abdallah, J.; Abdel Khalek, S.; Abdinov, O.; Aben, R.; Abi, B.; Abolins, M.; AbouZeid, O. S.; Abramowicz, H.; Abreu, H.; Abreu, R.; Abulaiti, Y.; Acharya, B. S.; Adamczyk, L.; Adams, D. L.; Adelman, J.; Adomeit, S.; Adye, T.; Agatonovic-Jovin, T.; Aguilar-Saavedra, J. A.; Agustoni, M.; Ahlen, S. P.; Ahmadov, F.; Aielli, G.; Akerstedt, H.; Åkesson, T. P. A.; Akimoto, G.; Akimov, A. V.; Alberghi, G. L.; Albert, J.; Albrand, S.; Alconada Verzini, M. J.; Aleksa, M.; Aleksandrov, I. N.; Alexa, C.; Alexander, G.; Alexandre, G.; Alexopoulos, T.; Alhroob, M.; Alimonti, G.; Alio, L.; Alison, J.; Allbrooke, B. M. M.; Allison, L. J.; Allport, P. P.; Aloisio, A.; Alonso, A.; Alonso, F.; Alpigiani, C.; Altheimer, A.; Alvarez Gonzalez, B.; Alviggi, M. G.; Amako, K.; Amaral Coutinho, Y.; Amelung, C.; Amidei, D.; Amor Dos Santos, S. P.; Amorim, A.; Amoroso, S.; Amram, N.; Amundsen, G.; Anastopoulos, C.; Ancu, L. S.; Andari, N.; Andeen, T.; Anders, C. F.; Anders, G.; Anderson, K. J.; Andreazza, A.; Andrei, V.; Anduaga, X. S.; Angelidakis, S.; Angelozzi, I.; Anger, P.; Angerami, A.; Anghinolfi, F.; Anisenkov, A. V.; Anjos, N.; Annovi, A.; Antonelli, M.; Antonov, A.; Antos, J.; Anulli, F.; Aoki, M.; Aperio Bella, L.; Arabidze, G.; Arai, Y.; Araque, J. P.; Arce, A. T. H.; Arduh, F. A.; Arguin, J-F.; Argyropoulos, S.; Arik, M.; Armbruster, A. J.; Arnaez, O.; Arnal, V.; Arnold, H.; Arratia, M.; Arslan, O.; Artamonov, A.; Artoni, G.; Asai, S.; Asbah, N.; Ashkenazi, A.; Åsman, B.; Asquith, L.; Assamagan, K.; Astalos, R.; Atkinson, M.; Atlay, N. B.; Auerbach, B.; Augsten, K.; Aurousseau, M.; Avolio, G.; Axen, B.; Ayoub, M. K.; Azuelos, G.; Baak, M. A.; Baas, A. E.; Bacci, C.; Bachacou, H.; Bachas, K.; Backes, M.; Backhaus, M.; Bagiacchi, P.; Bagnaia, P.; Bai, Y.; Bain, T.; Baines, J. T.; Baker, O. K.; Balek, P.; Balestri, T.; Balli, F.; Banas, E.; Banerjee, Sw.; Bannoura, A. A. E.; Bansil, H. S.; Barak, L.; Barberio, E. L.; Barberis, D.; Barbero, M.; Barillari, T.; Barisonzi, M.; Barklow, T.; Barlow, N.; Barnes, S. L.; Barnett, B. M.; Barnett, R. M.; Barnovska, Z.; Baroncelli, A.; Barone, G.; Barr, A. J.; Barreiro, F.; Barreiro Guimarães da Costa, J.; Bartoldus, R.; Barton, A. E.; Bartos, P.; Bassalat, A.; Basye, A.; Bates, R. L.; Batista, S. J.; Batley, J. R.; Battaglia, M.; Bauce, M.; Bauer, F.; Bawa, H. S.; Beacham, J. B.; Beattie, M. D.; Beau, T.; Beauchemin, P. H.; Beccherle, R.; Bechtle, P.; Beck, H. P.; Becker, K.; Becker, S.; Beckingham, M.; Becot, C.; Beddall, A. J.; Beddall, A.; Bednyakov, V. A.; Bee, C. P.; Beemster, L. J.; Beermann, T. A.; Begel, M.; Behr, J. K.; Belanger-Champagne, C.; Bell, P. J.; Bell, W. H.; Bella, G.; Bellagamba, L.; Bellerive, A.; Bellomo, M.; Belotskiy, K.; Beltramello, O.; Benary, O.; Benchekroun, D.; Bender, M.; Bendtz, K.; Benekos, N.; Benhammou, Y.; Benhar Noccioli, E.; Benitez Garcia, J. A.; Benjamin, D. P.; Bensinger, J. R.; Bentvelsen, S.; Beresford, L.; Beretta, M.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Berghaus, F.; Beringer, J.; Bernard, C.; Bernard, N. R.; Bernius, C.; Bernlochner, F. U.; Berry, T.; Berta, P.; Bertella, C.; Bertoli, G.; Bertolucci, F.; Bertsche, C.; Bertsche, D.; Besana, M. I.; Besjes, G. J.; Bessidskaia Bylund, O.; Bessner, M.; Besson, N.; Betancourt, C.; Bethke, S.; Bevan, A. J.; Bhimji, W.; Bianchi, R. M.; Bianchini, L.; Bianco, M.; Biebel, O.; Bieniek, S. P.; Biglietti, M.; Bilbao De Mendizabal, J.; Bilokon, H.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Black, C. W.; Black, J. E.; Black, K. M.; Blackburn, D.; Blair, R. E.; Blanchard, J. -B.; Blanco, J. E.; Blazek, T.; Bloch, I.; Blocker, C.; Blum, W.; Blumenschein, U.; Bobbink, G. J.; Bobrovnikov, V. S.; Bocchetta, S. S.; Bocci, A.; Bock, C.; Boddy, C. R.; Boehler, M.; Bogaerts, J. A.; Bogdanchikov, A. G.; Bohm, C.; Boisvert, V.; Bold, T.; Boldea, V.; Boldyrev, A. S.; Bomben, M.; Bona, M.; Boonekamp, M.; Borisov, A.; Borissov, G.; Borroni, S.; Bortfeldt, J.; Bortolotto, V.; Bos, K.; Boscherini, D.; Bosman, M.; Boudreau, J.; Bouffard, J.; Bouhova-Thacker, E. V.; Boumediene, D.; Bourdarios, C.; Bousson, N.; Boutouil, S.; Boveia, A.; Boyd, J.; Boyko, I. R.; Bozic, I.; Bracinik, J.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J. E.; Braun, H. M.; Brazzale, S. F.; Brendlinger, K.; Brennan, A. J.; Brenner, L.; Brenner, R.; Bressler, S.; Bristow, K.; Bristow, T. M.; Britton, D.; Britzger, D.; Brochu, F. M.; Brock, I.; Brock, R.; Bronner, J.; Brooijmans, G.; Brooks, T.; Brooks, W. K.; Brosamer, J.; Brost, E.; Brown, J.; Bruckman de Renstrom, P. A.; Bruncko, D.; Bruneliere, R.; Bruni, A.; Bruni, G.; Bruschi, M.; Bryngemark, L.; Buanes, T.; Buat, Q.; Bucci, F.; Buchholz, P.; Buckley, A. G.; Buda, S. I.; Budagov, I. A.; Buehrer, F.; Bugge, L.; Bugge, M. 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M.; Trincaz-Duvoid, S.; Tripiana, M. F.; Trischuk, W.; Trocmé, B.; Troncon, C.; Trottier-McDonald, M.; Trovatelli, M.; True, P.; Trzebinski, M.; Trzupek, A.; Tsarouchas, C.; Tseng, J. C-L.; Tsiareshka, P. V.; Tsionou, D.; Tsipolitis, G.; Tsirintanis, N.; Tsiskaridze, S.; Tsiskaridze, V.; Tskhadadze, E. G.; Tsukerman, I. I.; Tsulaia, V.; Tsuno, S.; Tsybychev, D.; Tudorache, A.; Tudorache, V.; Tuna, A. N.; Tupputi, S. A.; Turchikhin, S.; Turecek, D.; Turra, R.; Turvey, A. J.; Tuts, P. M.; Tykhonov, A.; Tylmad, M.; Tyndel, M.; Ueda, I.; Ueno, R.; Ughetto, M.; Ugland, M.; Uhlenbrock, M.; Ukegawa, F.; Unal, G.; Undrus, A.; Unel, G.; Ungaro, F. C.; Unno, Y.; Unverdorben, C.; Urban, J.; Urquijo, P.; Urrejola, P.; Usai, G.; Usanova, A.; Vacavant, L.; Vacek, V.; Vachon, B.; Valencic, N.; Valentinetti, S.; Valero, A.; Valery, L.; Valkar, S.; Valladolid Gallego, E.; Vallecorsa, S.; Valls Ferrer, J. A.; Van Den Wollenberg, W.; Van Der Deijl, P. C.; van der Geer, R.; van der Graaf, H.; Van Der Leeuw, R.; van Eldik, N.; van Gemmeren, P.; Van Nieuwkoop, J.; van Vulpen, I.; van Woerden, M. C.; Vanadia, M.; Vandelli, W.; Vanguri, R.; Vaniachine, A.; Vannucci, F.; Vardanyan, G.; Vari, R.; Varnes, E. W.; Varol, T.; Varouchas, D.; Vartapetian, A.; Varvell, K. E.; Vazeille, F.; Vazquez Schroeder, T.; Veatch, J.; Veloso, F.; Velz, T.; Veneziano, S.; Ventura, A.; Ventura, D.; Venturi, M.; Venturi, N.; Venturini, A.; Vercesi, V.; Verducci, M.; Verkerke, W.; Vermeulen, J. C.; Vest, A.; Vetterli, M. C.; Viazlo, O.; Vichou, I.; Vickey, T.; Vickey Boeriu, O. E.; Viehhauser, G. H. A.; Viel, S.; Vigne, R.; Villa, M.; Villaplana Perez, M.; Vilucchi, E.; Vincter, M. G.; Vinogradov, V. B.; Virzi, J.; Vivarelli, I.; Vives Vaque, F.; Vlachos, S.; Vladoiu, D.; Vlasak, M.; Vogel, M.; Vokac, P.; Volpi, G.; Volpi, M.; von der Schmitt, H.; von Radziewski, H.; von Toerne, E.; Vorobel, V.; Vorobev, K.; Vos, M.; Voss, R.; Vossebeld, J. H.; Vranjes, N.; Vranjes Milosavljevic, M.; Vrba, V.; Vreeswijk, M.; Vuillermet, R.; Vukotic, I.; Vykydal, Z.; Wagner, P.; Wagner, W.; Wahlberg, H.; Wahrmund, S.; Wakabayashi, J.; Walder, J.; Walker, R.; Walkowiak, W.; Wang, C.; Wang, F.; Wang, H.; Wang, H.; Wang, J.; Wang, J.; Wang, K.; Wang, R.; Wang, S. M.; Wang, T.; Wang, X.; Wanotayaroj, C.; Warburton, A.; Ward, C. P.; Wardrope, D. R.; Warsinsky, M.; Washbrook, A.; Wasicki, C.; Watkins, P. M.; Watson, A. T.; Watson, I. J.; Watson, M. F.; Watts, G.; Watts, S.; Waugh, B. M.; Webb, S.; Weber, M. S.; Weber, S. W.; Webster, J. S.; Weidberg, A. R.; Weinert, B.; Weingarten, J.; Weiser, C.; Weits, H.; Wells, P. S.; Wenaus, T.; Wendland, D.; Wengler, T.; Wenig, S.; Wermes, N.; Werner, M.; Werner, P.; Wessels, M.; Wetter, J.; Whalen, K.; Wharton, A. M.; White, A.; White, M. J.; White, R.; White, S.; Whiteson, D.; Wicke, D.; Wickens, F. J.; Wiedenmann, W.; Wielers, M.; Wienemann, P.; Wiglesworth, C.; Wiik-Fuchs, L. A. M.; Wildauer, A.; Wilkens, H. G.; Williams, H. H.; Williams, S.; Willis, C.; Willocq, S.; Wilson, A.; Wilson, J. A.; Wingerter-Seez, I.; Winklmeier, F.; Winter, B. T.; Wittgen, M.; Wittkowski, J.; Wollstadt, S. J.; Wolter, M. W.; Wolters, H.; Wosiek, B. K.; Wotschack, J.; Woudstra, M. J.; Wozniak, K. W.; Wu, M.; Wu, M.; Wu, S. L.; Wu, X.; Wu, Y.; Wyatt, T. R.; Wynne, B. M.; Xella, S.; Xu, D.; Xu, L.; Yabsley, B.; Yacoob, S.; Yakabe, R.; Yamada, M.; Yamaguchi, Y.; Yamamoto, A.; Yamamoto, S.; Yamanaka, T.; Yamauchi, K.; Yamazaki, Y.; Yan, Z.; Yang, H.; Yang, H.; Yang, Y.; Yanush, S.; Yao, L.; Yao, W-M.; Yasu, Y.; Yatsenko, E.; Yau Wong, K. H.; Ye, J.; Ye, S.; Yeletskikh, I.; Yen, A. L.; Yildirim, E.; Yorita, K.; Yoshida, R.; Yoshihara, K.; Young, C.; Young, C. J. S.; Youssef, S.; Yu, D. R.; Yu, J.; Yu, J. M.; Yu, J.; Yuan, L.; Yurkewicz, A.; Yusuff, I.; Zabinski, B.; Zaidan, R.; Zaitsev, A. M.; Zaman, A.; Zambito, S.; Zanello, L.; Zanzi, D.; Zeitnitz, C.; Zeman, M.; Zemla, A.; Zengel, K.; Zenin, O.; Ženiš, T.; Zerwas, D.; Zhang, D.; Zhang, F.; Zhang, J.; Zhang, L.; Zhang, R.; Zhang, X.; Zhang, Z.; Zhao, X.; Zhao, Y.; Zhao, Z.; Zhemchugov, A.; Zhong, J.; Zhou, B.; Zhou, C.; Zhou, L.; Zhou, L.; Zhou, N.; Zhu, C. G.; Zhu, H.; Zhu, J.; Zhu, Y.; Zhuang, X.; Zhukov, K.; Zibell, A.; Zieminska, D.; Zimine, N. I.; Zimmermann, C.; Zimmermann, R.; Zimmermann, S.; Zinonos, Z.; Zinser, M.; Ziolkowski, M.; Živković, L.; Zobernig, G.; Zoccoli, A.; zur Nedden, M.; Zurzolo, G.; Zwalinski, L.

    2015-09-01

    Charged-particle spectra obtained in Pb+Pb interactions at √sNN=2.76 and pp interactions at √sNN=2.76 TeV with the ATLAS detector at the LHC are presented, using data with integrated luminosities of 0.15 nb-1 and 4.2 pb-1, respectively, in a wide transverse momentum (0.5 < p T < 150 GeV) and pseudorapidity (|η| < 2) range. For Pb+Pb collisions, the spectra are presented as a function of collision centrality, which is determined by the response of the forward calorimeters located on both sides of the interaction point. The nuclear modification factors R AA and R CP are presented in detail as a function of centrality, p T and η. They show a distinct p T-dependence with a pronounced minimum at about 7 GeV. Above 60 GeV, R AA is consistent with a plateau at a centrality-dependent value, within the uncertainties. The value is 0.55 ± 0.01(stat.) ± 0.04(syst.) in the most central collisions. The R AA distribution is consistent with flat |η| dependence over the whole transverse momentum range in all centrality classes.

  1. Effect of hydrostatic pressure and uniaxial strain on the electronic structure of Pb1-xSnxTe

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Geilhufe, Matthias; Nayak, Sanjeev K.; Thomas, Stefan; Dane, Markus; Tripathi, Gouri S.; Entel, Peter; Hergert, Wolfram; Ernst, Arthur

    2015-12-09

    The electronic structure of Pb1–xSnxTe is studied by using the relativistic Korringa-Kohn-Rostoker Green function method in the framework of density functional theory. For all concentrations x, Pb1–xSnxTe is a direct semiconductor with a narrow band gap. In contrast to pure lead telluride, tin telluride shows an inverted band characteristic close to the Fermi energy. It will be shown that this particular property can be tuned, first, by alloying PbTe and SnTe and, second, by applying hydrostatic pressure or uniaxial strain. Furthermore, the magnitude of strain needed to switch between the regular and inverted band gap can be tuned by themore » alloy composition. In conclusion, there is a range of potential usage of Pb1–xSnxTe for spintronic applications.« less

  2. A family of GE engineers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A family of GE engineers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A family of GE engineers Father's Day is a time dedicated to celebrating family ties. In the GE family, there are many types of relationships and connections, including some that originated in the same household. Meet Monte and children, Ashlee and

  3. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  4. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  5. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  6. Ars Technica Visits GE's China Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ars Technica visits GE's China Technology Center Ars Technica visited GE's China Technology Center in Shanghai to discover what type of research is being conducted at the facility. The visit was a part of Ars Technica's Chasing

  7. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  8. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  9. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and ... GE is a world leader in the development and application of steam turbine technology, with ...

  10. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  11. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  12. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  13. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Heat Transfer in GE Jet Engines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on ...

  14. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this ... GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ...

  15. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  16. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  17. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser manufacturing process practiced at GE Global Research, makes parts from metal powder. You Might Also Like Munich_interior_V 10 Years ON: From

  18. Toolkit Model for SN-03 Final Proposal (ratecases/sn03)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Model SN CRAC ToolKit Model Variable, Flat SN CRAC, 80% TPP (TK187SN-03FS3BPA-PropVariableFlatSNN24-Jun-03.xls, 3.1 MB) Data Input Files (required to run the above...

  19. TEE-0077- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  20. Shape-controlled narrow-gap SnTe nanostructures: From nanocubes to nanorods and nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Guo, Shaojun; Andrew F. Fidler; He, Kai; Su, Dong; Chen, Gen; Lin, Qianglu; Pietryga, Jeffrey M.; Klimov, Victor I.

    2015-11-06

    In this study, the rational design and synthesis of narrow-gap colloidal semiconductor nanocrystals (NCs) is an important step toward the next generation of solution-processable photovoltaics, photodetectors, and thermoelectric devices. SnTe NCs are particularly attractive as a Pb-free alternative to NCs of narrow-gap lead chalcogenides. Previous synthetic efforts on SnTe NCs have focused on spherical nanoparticles. Here we report new strategies for synthesis of SnTe NCs with shapes tunable from highly monodisperse nanocubes, to nanorods (NRs) with variable aspect ratios, and finally to long, straight nanowires (NWs). Reaction at high temperature quickly forms thermodynamically favored nanocubes, but low temperatures lead tomore » elongated particles. Transmission electron microscopy studies of reaction products at various stages of the synthesis reveal that the growth and shape-focusing of monodisperse SnTe nanocubes likely involves interparticle ripening, while directional growth of NRs and NWs may be initiated by particle dimerization via oriented attachment.« less

  1. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) ...

  2. Technical Education | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click...

  3. Aviation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More Innovation 247: We're Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Click the image... ...

  4. Airline Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  5. Hybrid Locomotive | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Over the last decade, the U.S. government has enacted a number of rules designed to reduce smog and air pollution in cities and towns. For locomotive makers, like GE, that means ...

  6. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, Lynn A.; Watkins, S. P.

    2016-03-18

    Here, Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-dopants. We present high-resolution photoluminescence spectroscopy studies of unintentionally doped and Sn doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I10 bound exciton transition which was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. PL linewidths are exceptionally sharp for these samples, enabling clear identification of several donor species. Temperature dependent PL measurements of the I10 line emission energy and intensity dependence reveal a behavior similar tomore » other shallow donors in ZnO. Ionized donor bound exciton and two electron satellite transitions of the I10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule), confirming the shallow nature of this defect center, which we attribute to a SnZn double donor compensated by an unknown single acceptor.« less

  7. SN-03 Rate Case Workshops (rates/meetings)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials Related Link: SN-03 Power Rate Case May 1 & 13, 2003 - Debt and Liquidity Strategies workshops (on BPA Corporate web site) March 27, 2003 - SN CRAC Prescheduling...

  8. Orientation epitaxy of Ge1–xSnx films grown on single crystal CaF2 substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    A. J. Littlejohn; Zhang, L. H.; Lu, T. -M.; Kisslinger, K.; and Wang, G. -C.

    2016-03-15

    Ge1–xSnx films were grown via physical vapor deposition below the crystallization temperature of Ge on single crystal (111) and (100) CaF2 substrates to assess the role of Sn alloying in Ge crystallization. By studying samples grown at several growth temperatures ranging from 250 °C to 400 °C we report temperature-dependent trends in several of the films' properties. X-ray diffraction theta vs. two-theta (θ/2θ) scans indicate single orientation Ge1–xSnx(111) films are grown on CaF2(111) substrates at each temperature, while a temperature-dependent superposition of (111) and (100) orientations are exhibited in films grown on CaF2(100) above 250 °C. This is the firstmore » report of (111) oriented Ge1–xSnx grown on a (100) oriented CaF2 substrate, which is successfully predicted by a superlattice area matching model. These results are confirmed by X-ray diffraction pole figure analysis. θ/2θ results indicate substitutional Sn alloying in each film of about 5%, corroborated by energy dispersive spectroscopy. In addition, morphological and electrical properties are measured by scanning electron microscopy, atomic force microscopy and Hall mobility measurements and are also shown to be dependent upon growth temperature.« less

  9. Measurement of charged-particle spectra in Pb+Pb collisions at \\( \\sqrt{s_{\\mathrm{NN}}}=2.76 \\) TeV with the ATLAS detector at the LHC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Aad, G.

    2015-09-09

    Charged-particle spectra obtained in Pb+Pb interactions at \\( \\sqrt{s_{\\mathrm{NN}}}=2.76 \\) TeV and pp interactions at \\( \\sqrt{s_{\\mathrm{NN}}}=2.76 \\) TeV with the ATLAS detector at the LHC are presented, using data with integrated luminosities of 0.15 nb⁻¹ and 4.2 pb⁻¹, respectively, in a wide transverse momentum (0.5 < pT < 150 GeV) and pseudorapidity (|η| < 2) range. For Pb+Pb collisions, the spectra are presented as a function of collision centrality, which is determined by the response of the forward calorimeters located on both sides of the interaction point. The nuclear modification factors RAA and RCP are presented in detail asmore » a function of centrality, pT and η. They show a distinct pT-dependence with a pronounced minimum at about 7 GeV. Above 60 GeV, RAA is consistent with a plateau at a centrality-dependent value, within the uncertainties. The value is 0.55 ± 0.01(stat.) ± 0.04(syst.) in the most central collisions. The RAA distribution is consistent with flat |η| dependence over the whole transverse momentum range in all centrality classes.« less

  10. Measurement of charged-particle spectra in Pb+Pb collisions at \\( \\sqrt{s_{\\mathrm{NN}}}=2.76 \\) TeV with the ATLAS detector at the LHC

    SciTech Connect (OSTI)

    Aad, G.

    2015-09-09

    Charged-particle spectra obtained in Pb+Pb interactions at \\( \\sqrt{s_{\\mathrm{NN}}}=2.76 \\) TeV and pp interactions at \\( \\sqrt{s_{\\mathrm{NN}}}=2.76 \\) TeV with the ATLAS detector at the LHC are presented, using data with integrated luminosities of 0.15 nb⁻¹ and 4.2 pb⁻¹, respectively, in a wide transverse momentum (0.5 < pT < 150 GeV) and pseudorapidity (|η| < 2) range. For Pb+Pb collisions, the spectra are presented as a function of collision centrality, which is determined by the response of the forward calorimeters located on both sides of the interaction point. The nuclear modification factors RAA and RCP are presented in detail as a function of centrality, pT and η. They show a distinct pT-dependence with a pronounced minimum at about 7 GeV. Above 60 GeV, RAA is consistent with a plateau at a centrality-dependent value, within the uncertainties. The value is 0.55 ± 0.01(stat.) ± 0.04(syst.) in the most central collisions. The RAA distribution is consistent with flat |η| dependence over the whole transverse momentum range in all centrality classes.

  11. Method for preparing Pb-. beta. ''-alumina ceramic

    DOE Patents [OSTI]

    Hellstrom, E.E.

    1984-08-30

    A process is disclosed for preparing impermeable, polycrystalline samples of Pb-..beta..''-alumina ceramic from Na-..beta..''-alumina ceramic by ion exchange. The process comprises two steps. The first step is a high-temperature vapor phase exchange of Na by K, followed by substitution of Pb for K by immersing the sample in a molten Pb salt bath. The result is a polycrystalline Pb-..beta..''-alumina ceramic that is substantially crack-free.

  12. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SAN RAMON, CA-June, 18 2015 - GE Software (NYSE: GE) announced today it will partner with ... The GE Software curriculum includes workshops on design thinking and user experience, ...

  13. Measurement of prompt ψ(2S) to J/ψ yield ratios in Pb-Pb and p-p collisions at sNN=2.76TeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Bergauer, T.; Dragicevic, M.; Erö, J.; Fabjan, C.; Friedl, M.; Frühwirth, R.; et al

    2014-12-31

    The ratio between the prompt ψ(2S) and J/ψ yields, reconstructed via their decays into μ⁺μ⁻, is measured in Pb-Pb and p-p collisions at √sNN = 2.76  TeV. The analysis is based on Pb-Pb and p-p data samples collected by CMS at the Large Hadron Collider, corresponding to integrated luminosities of 150  μb⁻¹ and 5.4  pb⁻¹, respectively. The double ratio of measured yields (Nψ(2S)/NJ/ψ)Pb−Pb/(Nψ(2S)/NJ/ψ)p−p is computed in three Pb-Pb collision centrality bins and two kinematic ranges: one at midrapidity, |y| < 1.6, covering the transverse momentum range 6.5 < pT < 30  GeV/c, and the other at forward rapidity, 1.6<|y|<2.4, extending to lower pT values,more » 3« less

  14. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  15. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  16. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  17. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  18. 12 GeV! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  19. Comparative Results on Collimation of the SPS Beam of Protons and Pb Ions with Bent Crystals

    SciTech Connect (OSTI)

    Scandale, W.; Arduini, G.; Assmann, R.; Bracco, C.; Cerutti, F.; Christiansen, J.; Gilardoni, S.; Laface, E.; Losito, R.; Masi, A.; Metral, E.; Mirarchi, D.; Montesano, S.; Previtali, V.; Redaelli, S.; Valentino, G.; Schoofs, P.; Smirnov, G.; Tlustos, L.; Bagli, E.; Baricordi, S.; /INFN, Ferrara /Ferrara U. /INFN, Ferrara /Ferrara U. /INFN, Ferrara /Ferrara U. /INFN, Ferrara /Ferrara U. /INFN, Ferrara /Ferrara U. /Frascati /Frascati /INFN, Legnaro /INFN, Legnaro /INFN, Legnaro /INFN, Legnaro /INFN, Legnaro /INFN, Legnaro /INFN, Rome /INFN, Rome /INFN, Rome /INFN, Rome /INFN, Naples /Serpukhov, IHEP /Serpukhov, IHEP /Serpukhov, IHEP /Serpukhov, IHEP /Serpukhov, IHEP /Dubna, JINR /Dubna, JINR /Dubna, JINR /St. Petersburg, INP /St. Petersburg, INP /St. Petersburg, INP /St. Petersburg, INP /Imperial Coll., London /Imperial Coll., London /Imperial Coll., London /Imperial Coll., London /Imperial Coll., London /Imperial Coll., London /Imperial Coll., London /Imperial Coll., London /Brookhaven /SLAC /SLAC /SLAC

    2012-04-30

    New experiments on crystal assisted collimation have been carried out at the CERN SPS with stored beams of 120 GeV/c protons and Pb ions. Bent silicon crystals of 2 mm long with about 170 {mu}rad bend angle and a small residual torsion were used as primary collimators. In channeling conditions, the beam loss rate induced by inelastic interactions of particles with the crystal nuclei is minimal. The loss reduction was about 6 for protons and about 3 for Pb ions. Lower reduction value for Pb ions can be explained by their considerably larger ionization losses in the crystal. In one of the crystals, the measured fraction of the Pb ion beam halo deflected in channeling conditions was 74%, a value very close to that for protons. The intensity of the off-momentum halo leaking out from the collimation station was measured in the first high dispersion area downstream. The particle population in the shadow of the secondary collimator-absorber was considerably smaller in channeling conditions than for amorphous orientations of the crystal. The corresponding reduction was in the range of 2-5 for both protons and Pb ions.

  20. Sodium Battery | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  1. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  2. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  3. Evidence for transverse momentum and pseudorapidity dependent event plane fluctuations in PbPb and pPb collisions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khachatryan, Vardan

    2015-09-22

    A systematic study of the factorization of long-range azimuthal two-particle correlations into a product of single-particle anisotropies is presented as a function of pT and η of both particles and as a function of the particle multiplicity in PbPb and pPb collisions. The data were taken with the CMS detector for PbPb collisions at √sNN=2.76 TeV and pPb collisions at √sNN=5.02 TeV, covering a very wide range of multiplicity. Factorization is observed to be broken as a function of both particle pT and η. When measured with particles of different pT, the magnitude of the factorization breakdown for the secondmore » Fourier harmonic reaches 20% for very central PbPb collisions but decreases rapidly as the multiplicity decreases. The data are consistent with viscous hydrodynamic predictions, which suggest that the effect of factorization breaking is mainly sensitive to the initial-state conditions rather than to the transport properties (e.g., shear viscosity) of the medium. The factorization breakdown is also computed with particles of different η. The effect is found to be weakest for mid-central PbPb events but becomes larger for more central or peripheral PbPb collisions, and also for very-high-multiplicity pPb collisions. The η-dependent factorization data provide new insights to the longitudinal evolution of the medium formed in heavy ion collisions.« less

  4. Evidence for transverse momentum and pseudorapidity dependent event plane fluctuations in PbPb and pPb collisions

    SciTech Connect (OSTI)

    Khachatryan, Vardan

    2015-09-22

    A systematic study of the factorization of long-range azimuthal two-particle correlations into a product of single-particle anisotropies is presented as a function of pT and η of both particles and as a function of the particle multiplicity in PbPb and pPb collisions. The data were taken with the CMS detector for PbPb collisions at √sNN=2.76 TeV and pPb collisions at √sNN=5.02 TeV, covering a very wide range of multiplicity. Factorization is observed to be broken as a function of both particle pT and η. When measured with particles of different pT, the magnitude of the factorization breakdown for the second Fourier harmonic reaches 20% for very central PbPb collisions but decreases rapidly as the multiplicity decreases. The data are consistent with viscous hydrodynamic predictions, which suggest that the effect of factorization breaking is mainly sensitive to the initial-state conditions rather than to the transport properties (e.g., shear viscosity) of the medium. The factorization breakdown is also computed with particles of different η. The effect is found to be weakest for mid-central PbPb events but becomes larger for more central or peripheral PbPb collisions, and also for very-high-multiplicity pPb collisions. The η-dependent factorization data provide new insights to the longitudinal evolution of the medium formed in heavy ion collisions.

  5. Multiplicity and transverse momentum evolution of charge-dependent correlations in pp, p–Pb, and Pb–Pb collisions at the LHC

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Adam, J.; Adamová, D.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agrawal, N.; Ahammed, Z.; Ahn, S. U.; Aiola, S.; Akindinov, A.; et al

    2016-02-19

    Here, we report on two-particle charge-dependent correlations in pp, p–Pb, and Pb–Pb collisions as a function of the pseudorapidity and azimuthal angle difference, Δη and Δφ respectively. These correlations are studied using the balance function that probes the charge creation time and the development of collectivity in the produced system. The dependence of the balance function on the event multiplicity as well as on the trigger and associated particle transverse momentum (pT) in pp, p–Pb, and Pb–Pb collisions at √sNN = 7, 5.02, and 2.76 TeV, respectively, are presented. In the low transverse momentum region, for 0.2 < pT GeV/c, the balance function becomes narrower in both Δη and Δφ directions in all three systems for events with higher multiplicity. The experimental findings favor models that either incorporate some collective behavior (e.g. AMPT) or different mechanisms that lead to effects that resemble collective behavior (e.g. PYTHIA8 with color reconnection). For higher values of transverse momenta the balance function becomes even narrower but exhibits no multiplicity dependence, indicating that the observed narrowing with increasing multiplicity at low pT is a feature of bulk particle production.« less

  6. Safety Net (SN) CRAC (rates/adjustments)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oregon. To participate by telephone, please call Cynthia Jones (503) 230-5459 or Cain Bloomer (503-230-7443) in advance of the workshop. August 28, 2003 - Final FB and SN...

  7. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  8. What Is MEMS? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Materials, Surfaces and Interfaces 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN ...

  9. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-7-v GE Scientists Unveil Greener, Smarter Sleigh for Santa Claus 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN lightning bolt We One-Upped Ben ...

  10. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  11. Advances in Nb3Sn Performance

    SciTech Connect (OSTI)

    Godeke, Arno

    2008-05-19

    Nb{sub 3}Sn wires with non-Cu critical current densities (J{sub c}) that surpass 3 kAmm{sup -2} at 12 T and 4.2 K are commercially available in piece lengths longer than 10 km. Accelerator-type magnets that utilize these conductors have achieved record magnetic fields. This article summarizes key developments in the last decade that have led to these significant improvements in the performance of Nb{sub 3}Sn wires.

  12. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disclosures, Disclaimers and Policies Home > Disclosures, Disclaimers and Policies Financial Disclosures GE Global Research financial disclosures and conflicts related to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC Recruiting Leader, 518-387-6703, magee@ge.com. From GE Global Research https://twitter.com/GEResearch

  13. Deflection and Extraction of Pb Ions up to 33 TeV/c by a Bent Silicon Crystal

    SciTech Connect (OSTI)

    Arduini, G.; Biino, C.; Clement, M.; Cornelis, K.; Doble, N.; Elsener, K.; Ferioli, G.; Fidecaro, G.; Gatignon, L.; Grafstroem, P.; Gyr, M.; Herr, W.; Klem, J.; Mikkelsen, U.; Weisse, E.; Mo Uggerho Taratin, A.; Freund, A.; Keppler, P.; Major, J.

    1997-11-01

    The first results from an experiment to deflect a beam of fully stripped, ultrarelativistic Pb{sup 82+} ions of 400 GeV/c per unit of charge, equivalent to 33 TeV/c , by means of a bent crystal are reported. Deflection efficiencies are as high as 14{percent}, in agreement with theoretical estimates. In a second experiment a bent crystal was used to extract 270 GeV/c -per-charge Pb{sup 82+} (22 TeV/c) ions from a coasting beam in the CERN-SPS, and a high extraction efficiency of up to 10{percent} was found. These represent the first measurements to demonstrate applications of bent crystals in high energy heavy ion beams. {copyright} {ital 1997} {ital The American Physical Society}

  14. E2 transition probabilities for decays of isomers observed in neutron-rich odd Sn isotopes

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Iskra, Ł. W.; Broda, R.; Janssens, R. V.F.; Wrzesiński, J.; Chiara, C. J.; Carpenter, M. P.; Fornal, B.; Hoteling, N.; Kondev, F. G.; Królas, W.; et al

    2015-01-01

    High-spin states were investigated with gamma coincidence techniques in neutron-rich Sn isotopes produced in fission processes following ⁴⁸Ca + ²⁰⁸Pb, ⁴⁸Ca + ²³⁸U, and ⁶⁴Ni + ²³⁸U reactions. By exploiting delayed and cross-coincidence techniques, level schemes have been delineated in odd ¹¹⁹⁻¹²⁵Sn isotopes. Particular attention was paid to the occurrence of 19/2⁺ and 23/2⁺ isomeric states for which the available information has now been significantly extended. Reduced transition probabilities, B(E2), extracted from the measured half-lives and the established details of the isomeric decays exhibit a striking regularity. This behavior was compared with the previously observed regularity of the B(E2) amplitudesmore » for the seniority ν = 2 and 3, 10⁺ and 27/2⁻ isomers in even- and odd-Sn isotopes, respectively.« less

  15. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  16. BPA Contract No. 11PB-21385

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1 to BPA Contract No. 11PB-21385 Extension of the Short-Tenn Bridge Agreement between Bonneville Power Administration and British Columbia Hydro and Power Authority Whereas...

  17. SPEIR: A Ge Compton Camera

    SciTech Connect (OSTI)

    Mihailescu, L; Vetter, K M; Burks, M T; Hull, E L; Craig, W W

    2004-02-11

    The SPEctroscopic Imager for {gamma}-Rays (SPEIR) is a new concept of a compact {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The system behind this concept employs double-sided segmented planar Ge detectors accompanied by the use of list-mode photon reconstruction methods to create a sensitive, compact Compton scatter camera.

  18. GE PowerPoint Template

    U.S. Energy Information Administration (EIA) Indexed Site

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  19. Ferromagnetism of Fe3Sn and alloys

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Sales, Brian C.; Saparov, Bayrammurad; McGuire, Michael A.; Singh, David J.; Parker, David S.

    2014-11-12

    Hexagonal Fe3Sn has many of the desirable properties for a new permanent magnet phase with a Curie temperature of 725 K, a saturation moment of 1.18 MA/m. and anisotropy energy, K1 of 1.8 MJ/m3. However, contrary to earlier experimental reports, we found both experimentally and theoretically that the easy magnetic axis lies in the hexagonal plane, which is undesirable for a permanent magnet material. One possibility for changing the easy axis direction is through alloying. We used first principles calculations to investigate the effect of elemental substitutions. The calculations showed that substitution on the Sn site has the potential tomore » switch the easy axis direction. Transition metal substitutions with Co or Mn do not have this effect. We attempted synthesis of a number of these alloys and found results in accord with the theoretical predictions for those that were formed. However, the alloys that could be readily made all showed an in-plane easy axis. The electronic structure of Fe3Sn is reported, as are some are magnetic and structural properties for the Fe3Sn2, and Fe5Sn3 compounds, which could be prepared as mm-sized single crystals.« less

  20. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  1. SN 2006bt: A PERPLEXING, TROUBLESOME, AND POSSIBLY MISLEADING...

    Office of Scientific and Technical Information (OSTI)

    We present optical light curves and spectra of SN 2006bt which demonstrate the peculiar nature of this object. SN 2006bt has broad, slowly declining light curves indicative of a ...

  2. Shell model calculation for Te and Sn isotopes in the vicinity of {sup 100}Sn

    SciTech Connect (OSTI)

    Yakhelef, A.; Bouldjedri, A.

    2012-06-27

    New Shell Model calculations for even-even isotopes {sup 104-108}Sn and {sup 106,108}Te, in the vicinity of {sup 100}Sn have been performed. The calculations have been carried out using the windows version of NuShell-MSU. The two body matrix elements TBMEs of the effective interaction between valence nucleons are obtained from the renormalized two body effective interaction based on G-matrix derived from the CD-bonn nucleon-nucleon potential. The single particle energies of the proton and neutron valence spaces orbitals are defined from the available spectra of lightest odd isotopes of Sb and Sn respectively.

  3. Aluminum-stabilized NB3SN superconductor

    DOE Patents [OSTI]

    Scanlan, Ronald M.

    1988-01-01

    An aluminum-stabilized Nb.sub.3 Sn superconductor and process for producing same, utilizing ultrapure aluminum. Ductile components are co-drawn with aluminum to produce a conductor suitable for winding magnets. After winding, the conductor is heated to convert it to the brittle Nb.sub.3 Sn superconductor phase, using a temperature high enough to perform the transformation but still below the melting point of the aluminum. This results in reaction of substantially all of the niobium, while providing stabilization and react-in-place features which are beneficial in the fabrication of magnets utilizing superconducting materials.

  4. Crystal growth and annealing study of fragile, non-bulk superconductivity in YFe2Ge 2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, H.; Ran, S.; Mun, E. D.; Hodovanets, H.; Tanatar, M. A.; Prozorov, R.; Bud’ko, S. L.; Canfield, P. C.

    2015-02-05

    In this study, we investigated the occurrence and nature of superconductivity in single crystals of YFe2Ge2 grown out of Sn flux by employing X-ray diffraction, electrical resistivity and specific heat measurements. We found that the residual resistivity ratio (RRR) of single crystals can be greatly improved, reaching as high as ~60, by decanting the crystals from the molten Sn at ~350°C and/or by annealing at temperatures between 550°C and 600°C. We found that the samples with RRR ≳ 34 showed resistive signatures of superconductivity with the onset of the superconducting transition Tc ≈ 1.4K. RRR values vary between 35 andmore » 65 with, on average, no systematic change in value Tc, indicating that the systematic changes in RRR do not lead to comparable changes in Tc. Specific heat measurements on samples that showed the clear resistive signatures of a superconducting transition did not show any signature of a superconducting phase transition, which suggests that the superconductivity observed in this compound is either some sort of filamentary, strain-stabilized superconductivity associated with small amounts of stressed YFe2Ge2 (perhaps at twin boundaries or dislocations) or is a second crystallographic phase that is present at level below detection capability of conventional powder X-ray techniques.« less

  5. Nanostructures boost the thermoelectric performance of PbS (Journal...

    Office of Scientific and Technical Information (OSTI)

    Nanostructures boost the thermoelectric performance of PbS Citation Details In-Document Search Title: Nanostructures boost the thermoelectric performance of PbS In situ ...

  6. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Next Revolution in MEMS Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Next Revolution in MEMS Microelectromechanical systems (MEMS) engineers share what GE Global Research is doing to revolutionize MEMS technology. You Might Also Like 2-1-8-v-mems-applications Engineer Chris Keimel Introduces MEMS Technology

  7. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  8. GE Global Research in Tirat Carmel, Israel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tirat Carmel, Israel Tirat Carmel, Israel The Israel Technology Center creates partnerships between Israeli external innovators and GE to bring innovative technologies to the ...

  9. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to help accelerate the development of new applications to improve the quality of care. Michael Idelchik, vice president of Advanced Technology Programs at GE Global...

  10. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    understandable, and actionable software experiences for GE customers, partners ... The fact that this work takes place within the Software CoE means that designers and ...

  11. GE Global Research in Shanghai, China

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  12. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DirectWriteV Building More Intelligent GE Products with Additive Manufacturing DirectWriteV Innovating Around the Clock to Change the Paradigm of Manufacturing ...

  13. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of...

  14. Underground CO2 Storage | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    William Challener, principal investigator and physicist in the Photonics Lab at GE Global Research. "The work is very challenging. We have already developed a single sensor system ...

  15. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  16. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  17. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  18. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  19. Cool and Quiet DCJ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The technology was originally developed for commercial jet engines but has been adapted ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  20. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  1. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the...

  2. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global Research, the technology development arm for the General Electric Company (NYSE: GE), to better

  3. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, MIT Build Crowdsourcing Software Platform Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), is embarking on a program "vehicleforge.mil" to

  4. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  5. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  6. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  7. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  8. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  9. PbTe/TAGS RTG Mars Environmental Survey (MESUR) mission

    SciTech Connect (OSTI)

    Schock, A. )

    1993-01-10

    The paper describes the results of studies on an RTG option for powering the global network of unmanned landers for NASA's Mars Environmental Survey (MESUR) mission. RTGs are essentially unaffected by diurnal and seasonal variations, Martian sandstorms, and landing site latitudes, and their waste heat can stabilize the temperatures of the landers and their payload. The RTG designs described in this paper are based on PbTe/TAGS thermoelectric elements, in contast to the SiGe-based RTGs the author described in previous publications. The presently described RTGs differ not only in the choice of thermoelectric materials but also in the use of much lower operating temperatures, conductive rather than radiative heat transfer, an inert cover gas instead of vacuum in the RTG's converter, and fibrous instead of multifoil thermal insulation. As in a previous Teledyne design, the Fairchild designs described in this paper employ flight-proven General Purpose Source modules and Close-Pack Arrays of thermoelectric converter modules. Illustrative point designs of RTGs producing 41 and 51 watts(e) at 28 volts are presented. The presented performance parameters were derived by detailed thermal, thermoelectric, and electrical analyses (including radiator geometry optimization) described in the paper. The Fairchild study showed that, with appropriate modifications, the Teledyne design can be scaled up to higher power levels, and it identified solutions to ensure adequate fuel clad ductility at launch temperatures and adequate thermal conductance from the thermoelectric cold ends to the RTG housing.

  10. Structural evolution of Ge-rich Si{sub 1-x}Ge{sub x} films deposited...

    Office of Scientific and Technical Information (OSTI)

    clusters percolate together and Si diffuses and redistributes to form a GeSiGe coreshell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. ...

  11. GE Software Expert Julian Keith Loren Discusses Innovation and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ... GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ...

  12. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  13. GE Global Research Sourcing External Document & Process Repository...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  14. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  15. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. ...

  16. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radislav Potyrailo, principal scientist at GE Global Research who leads GE's bio-inspired photonics programs. "This new class of thermal imaging sensors promises significant ...

  17. GE to provide data, analytics to Brazilian Canoe Confederation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance ...

  18. In situ synchrotron study of electromigration induced grain rotations in Sn solder joints

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shen, Hao; Zhu, Wenxin; Li, Yao; Tamura, Nobumichi; Chen, Kai

    2016-04-18

    In this paper we report an in situ study of the early stage of microstructure evolution induced by electromigration in a Pb-free β-Sn based solder joint by synchrotron polychromatic X-ray microdiffraction. With this technique, crystal orientation evolution is monitored at intragranular levels with high spatial and angular resolution. During the entire experiment, no crystal growth is detected, and rigid grain rotation is observed only in the two grains within the current crowding region, where high density and divergence of electric current occur. Theoretical calculation indicates that the trend of electrical resistance drop still holds under the present conditions in themore » grain with high electrical resistivity, while the other grain with low resistivity reorients to align its a-axis more parallel with the ones of its neighboring grains. A detailed study of dislocation densities and subgrain boundaries suggests that grain rotation in β-Sn, unlike grain rotation in high melting temperature metals which undergo displacive deformation, is accomplished via diffusional process mainly, due to the high homologous temperature.« less

  19. Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zhuang, Houlong L.; Xie, Yu; Kent, P. R. C.; Ganesh, P.

    2015-07-06

    Despite many single-layer materials being reported in the past decade, few of them exhibit magnetism. Here we perform first-principles calculations using accurate hybrid density functional methods (HSE06) to predict that single-layer CrSnTe3 (CST) is a ferromagnetic semiconductor, with band gaps of 0.9 and 1.2 eV for the majority and minority spin channels, respectively. We determine the Curie temperature as 170 K, significantly higher than that of single-layer CrSiTe3 (90K) and CrGeTe3 (130 K). This is due to the enhanced ionicity of the Sn-Te bond, which in turn increases the superexchange coupling between the magnetic Cr atoms. We further explore themore » mechanical and dynamical stability and strain response of this single-layer material for possible epitaxial growth. Lastly, our study provides an intuitive approach to understand and design novel single-layer magnetic semiconductors for a wide range of spintronics and energy applications.« less

  20. Coherent ?(2S) photo-production in ultra-peripheral PbPb collisions...

    Office of Scientific and Technical Information (OSTI)

    Coherent (2S) photo-production in ultra-peripheral PbPb collisions at sNN2.76 TeV Citation Details In-Document Search Title: Coherent (2S) photo-production in ultra-peripheral...

  1. A transferable force field for CdS-CdSe-PbS-PbSe solid systems

    SciTech Connect (OSTI)

    Fan, Zhaochuan; Vlugt, Thijs J. H.; Koster, Rik S.; Fang, Changming; Huis, Marijn A. van; Wang, Shuaiwei; Yalcin, Anil O.; Tichelaar, Frans D.; Zandbergen, Henny W.

    2014-12-28

    A transferable force field for the PbSe-CdSe solid system using the partially charged rigid ion model has been successfully developed and was used to study the cation exchange in PbSe-CdSe heteronanocrystals [A. O. Yalcin et al., “Atomic resolution monitoring of cation exchange in CdSe-PbSe heteronanocrystals during epitaxial solid-solid-vapor growth,” Nano Lett. 14, 3661–3667 (2014)]. In this work, we extend this force field by including another two important binary semiconductors, PbS and CdS, and provide detailed information on the validation of this force field. The parameterization combines Bader charge analysis, empirical fitting, and ab initio energy surface fitting. When compared with experimental data and density functional theory calculations, it is shown that a wide range of physical properties of bulk PbS, PbSe, CdS, CdSe, and their mixed phases can be accurately reproduced using this force field. The choice of functional forms and parameterization strategy is demonstrated to be rational and effective. This transferable force field can be used in various studies on II-VI and IV-VI semiconductor materials consisting of CdS, CdSe, PbS, and PbSe. Here, we demonstrate the applicability of the force field model by molecular dynamics simulations whereby transformations are initiated by cation exchange.

  2. VERY LATE PHOTOMETRY OF SN 2011fe

    SciTech Connect (OSTI)

    Kerzendorf, W. E. [Department of Astronomy and Astrophysics, University of Toronto, 50 Saint George Street, Toronto, ON M5S 3H4 (Canada); Taubenberger, S.; Seitenzahl, I. R.; Ruiter, A. J., E-mail: wkerzendorf@gmail.com [Max-Planck-Institut fr Astrophysik, Karl-Schwarzschild-Strae 1, D-85748 Garching (Germany)

    2014-12-01

    The Type Ia supernova SN 2011fe is one of the closest supernovae of the past decades. Due to its proximity and low dust extinction, this object provides a very rare opportunity to study the extremely late time evolution (>900 days) of thermonuclear supernovae. In this Letter, we present our photometric data of SN 2011fe taken at an unprecedented late epoch of ?930 days with GMOS-N mounted on the Gemini North telescope (g=23.43 0.28, r=24.14 0.14, i=23.91 0.18, and z=23.90 0.17) to study the energy production and retention in the ejecta of SN 2011fe. Together with previous measurements by other groups, our result suggests that the optical supernova light curve can still be explained by the full thermalization of the decay positrons of {sup 56}Co. This is in spite of theoretical predicted effects (e.g., infrared catastrophe, positron escape, and dust) that advocate a substantial energy redistribution and/or loss via various processes that result in a more rapid dimming at these very late epochs.

  3. Charge-transfer dynamics in multilayered PbS and PbSe quantum dot architectures

    SciTech Connect (OSTI)

    Xu, F.; Ma, X.; Haughn, C. R.; Doty, M. F.; Cloutier, S. G.

    2014-02-03

    We demonstrate control of the charge transfer process in PbS and PbSe quantum dot assemblies. We first demonstrate efficient charge transfer from donor quantum dots to acceptor quantum dots in a multi-layer PbSe cascade structure. Then, we assemble type-I and type-II heterostructures using both PbS and PbSe quantum dots via careful control of the band alignment. In type-I structures, photo-generated carriers are transferred and localized in the smaller bandgap (acceptor) quantum dots, resulting in a significant luminescence enhancement. In contrast, a significant luminescence quenching and shorter emission lifetime confirms an efficient separation of photo-generated carriers in the type-II architecture.

  4. PbS nanocrystal synthesis in Pb-containing silicate glasses

    SciTech Connect (OSTI)

    Espiau de Lamaeestre, R.; Bernas, H.

    2005-11-15

    We describe a synthesis of PbS nanocrystals in glasses, involving 150 keV sulfur implantation into Pb-containing silicate glasses at peak concentrations up to 3.6 at. % and postannealing around the glass transition temperature (500-600 deg. C). The PbS nanocrystals, whose growth is evidenced by transmission electron microscopy, display intense photoluminescence (PL) in the 1-1.5 {mu}m wavelength range. Besides bypassing the sulfur retention problem occurring in traditional glass fusion techniques, our method improves control over nucleation and growth. The latter is demonstrated by the impact on the PbS nanocrystal PL properties of progressively replacing CaO by ZnO in a S-implanted Pb glass.

  5. Pi in Statistics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spying on GE Statisticians Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Spying on GE Statisticians Andrew Barnes, an applied mathematician at GE Global Research, leads the sPI CAM around the center to see how researchers use Pi in their work. You Might Also Like Geothermal_V Newest APS Fellow Driving

  6. GE Global Research in Niskayuna, NY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working at GE Global Research Headquarters Visit the Careers page to search and apply for Global Research jobs

  7. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  8. Making Industrial Parts Smarter | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building More Intelligent GE Products with Additive Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Building More Intelligent GE Products with Additive Manufacturing James Y. Yang 2014.04.03 GE is using 3D printing and other additive technologies to design and produce parts never before possible. We're

  9. Measurement of prompt D-meson production in p–Pb collisions at sNN=5.02TeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Abelev, B.; Adam, J.; Adamová, D.; Aggarwal, M. M.; Aglieri Rinella, G.; Agnello, M.; Agostinelli, A.; Agrawal, N.; Ahammed, Z.; Ahmad, N.; et al

    2014-12-04

    The pT-differential production cross sections of the prompt charmed mesons D⁰, D⁺, D*⁺, and D⁺s and their charge conjugate in the rapidity interval −0.96 < ycms < 0.04 were measured in p−Pb collisions at a center-of-mass energy √sNN = 5.02  TeV with the ALICE detector at the LHC. The nuclear modification factor RpPb, quantifying the D-meson yield in p−Pb collisions relative to the yield in pp collisions scaled by the number of binary nucleon-nucleon collisions, is compatible within the 15%–20% uncertainties with unity in the transverse momentum interval 1 < pT < 24  GeV/c. No significant difference among the RpPb of themore » four D-meson species is observed. The results are described within uncertainties by theoretical calculations that include initial-state effects. The measurement adds experimental evidence that the modification of the momentum spectrum of D mesons observed in Pb-Pb collisions with respect to pp collisions is due to strong final-state effects induced by hot partonic matter.« less

  10. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over and around some of our biggest machines, including the ecoROTR experimental......

  11. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  12. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Remembering Zach Stum Ron Olson 2014.02.25 "To live in hearts we leave behind is not to die." Thomas Campbell, Physicist Zach-Stum On Sunday, February 9, GE Global Research lost a ...

  13. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email ...

  14. Smarter Sleigh Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... and Manufacturing in Europe 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 1-2-38-v-software-reliability-engineering A Stochastic Process-Based ...

  15. Oil & Gas Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  16. Advanced Composite Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The fan blade is a work of art, with each stripe of composite material laid by hand to ... GE Innovation and Manufacturing in Europe 3-1-9-v-industrial-inspec...

  17. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  18. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  19. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  20. High Performance Computing for Manufacturing Parternship | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  1. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  2. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  3. Access to Clean Water | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clean Water Innovations Click to email this to a friend (Opens in new window) Share on ... What Works: Mark Little on Clean Water Innovations Mark Little, director of GE Global ...

  4. Electrochemical synthesis of Nb3Sn coatings on Cu substrates

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Franz, S.; Barzi, E.; Turrioni, D.; Glionna, L.; Bestetti, M.

    2015-09-11

    This study aims at contributing to the development of superconducting Nb3Sn thin films for possible applications, as for instance in superconducting radio frequency (SRF) cavities. The synthesis of Nb-Sn coatings was carried out on copper substrates by electrodeposition from 1-Butyl-3-methylimidazolium chloride (BMIC) ionic liquids containing SnCl2 and NbCl5. Cyclic voltammetric curves were recorded to identify the reduction potentials of Nb and Sn ionic species. Electrodeposition was performed at 40 and 400 mA/cm2 and 130°C. The CV demonstrated that BMIC has a suitable potential window for co-deposition of Nb and Sn. The electrodeposited coatings showed a cubic Nb3Sn phase with (211)more » preferred orientation, a disordered orthorhombic NbSn2 phase and Sn-Cu phases. Film thickness was from 200 to 750 nm. These results suggest that electrodeposition of Nb-Sn coatings on copper substrates could be a suitable route to one day replace the current expensive Nb SRF cavities.« less

  5. Process for the manufacture of 117Sn diethylenetriaminepentaacetic acids

    DOE Patents [OSTI]

    Srivastava, Suresh C.; Li, Zizhong; Meinken, George

    2003-01-01

    Novel methods are provided for the manufacture of .sup.117m Sn(Sn.sup.4+) DTPA. The method allows the use of DTPA, a toxic chelating agent, in an approximately 1:1 ratio to .sup.117m Sn(Sn.sup.4+) via either aqueous conditions, or using various organic solvents, such as methylene chloride. A pharmaceutical composition manufactured by the novel method is also provided, as well as methods for treatment of bone tumors and pain associated with bone cancer using the pharmaceutical composition of the invention.

  6. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Appliances & Lighting We're developing cutting-edge appliances and innovative lighting to make life easier, reduce costs and increase energy efficiency. Home > Innovation > Appliances & Lighting Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership

  7. Robotic Wind Turbine Inspection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  8. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation We're working with railroads and heavy industries to create hybrid systems, batteries and first-in-class transportation solutions. Home > Innovation > Transportation Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence,

  9. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crowdsourcing Software Platform Wins Award Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership 100 award in

  10. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas ... GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas ...