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1

Osram Sylvania | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Office of InspectorConcentrating Solar Powerstories onFocusOski Energy LLC Place: Reno, Nevada Sector: GeothermalOsram

2

OSRAM SYLVANIA Develops High-Efficiency LED Troffer Replacement  

Broader source: Energy.gov [DOE]

With the help of DOE funding, OSRAM SYLVANIA is developing a high-efficiency LED 2'x2' troffer replacement that is expected to be commercially available in the spring of 2012 and to be cost-competitive with existing troffers of that size. It is projected to have a light output of up to 4,000 lumens, an efficacy of more than 100 lm/W, and a CCT of 3500K.

3

OSRAM SYLVANIA Demonstrates 1,439-Lumen Downlight with Efficacy of 82 lm/W  

Broader source: Energy.gov [DOE]

OSRAM SYLVANIA researchers have demonstrated a downlight luminaire that achieves 1,439 lumens at an efficacy of 82 lm/W in steady-state operation. These results exceed the project goals of achieving 1,300 lumens and 70 lm/W at a CCT of 3500K and CRI of 80. Improvements in LED chips, phosphors, optics, electronics, and thermal management at OSRAM all contributed to the higher-than-projected luminaire performance.

4

Sylvania: Proposed Penalty (2013-CE-2603)  

Broader source: Energy.gov [DOE]

DOE alleged in a Notice of Proposed Civil Penalty that Osram Sylvania Inc. failed to certify a variety of general service fluorescent lamps as compliant with the applicable energy conservation standards.

5

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA FOR AN...  

Broader source: Energy.gov (indexed) [DOE]

contract will be modified to add the Patent Rights--Waiver clause in conformance with 10 CFR 784.12, wherein Philips has agreed to the provisions of 35 U.S.C 202, 203, and...

6

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA FOR AN...  

Broader source: Energy.gov (indexed) [DOE]

similar to a frosted incandescent bulb. Use of the ceramic enables the size of the remote phosphor to be minimized while maintaining a sufficient thermal path for...

7

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA PRODUCTS...  

Broader source: Energy.gov (indexed) [DOE]

the waived invention is suspended until approved in writing by the DOE. WAIVER ACTION - ABSTRACT W(A)-05-031 (CH-1300) REQUESTOR CONTRACT SCOPE OF WORK RATIONALE FOR DECISION...

8

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM SYLVANIA DEVELOPMENT...  

Broader source: Energy.gov (indexed) [DOE]

is suspended until approved in writing by the DOE. 3 :+41 TUTAL PAGE.04 0 WAIVER ACTION - ABSTRACT W(A)-04-073 (CH-1251) REQUESTOR CONTRACT SCOPE OF WORK RATIONALE FOR DECISION...

9

Workplace Charging Challenge Partner: OSRAM SYLVANIA | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

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10

STATEMENT OF CONSIDERATIONS REQUEST BY OSRAM OPTO SEMICONDUCTORS  

Broader source: Energy.gov (indexed) [DOE]

resulting from Osram OS inventions will be assigned to Osram OS GmbH in Regenseburg, Germany The total estimated cost of the contract is 1,448,473 with the DOE share being...

11

DOE - Office of Legacy Management -- Sylvania Corning Nuclear...  

Office of Legacy Management (LM)

to SYLVANIA CORNING NUCLEAR CORP., INC., SYLVANIA LABORATORIES NY.07-1 - Letter, Smith to Norris, Contract at (30-1)-1293- U Metal Requirements, March 5, 1953 NY.07-2 -...

12

City of Sylvania, Georgia (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 NoPublic Utilities Address: 160Benin:Energy NebraskaStanhope, Iowa (Utility Company) Jump to:Stratton,IowaSylvania

13

Energy Department Accelerates the Deployment of Advanced Vehicle...  

Broader source: Energy.gov (indexed) [DOE]

Corporation, National Grid, New York Power Authority, NRG Energy, OSRAM SYLVANIA, Raytheon Company and Southern California Edison. By signing the Workplace Charging Pledge,...

14

The Pennsylvania State University The Graduate School  

E-Print Network [OSTI]

and microwave heating (at 2.45 GHz). Temperature during microwave heating was measured with an infrared (Baikalox CR-30, Baikowski) [18] 23 3.2 Apparent Emissivity of Osram-Sylvania Tube Samples from Infrared

Messing, Gary L.

15

Advance Patent Waiver W(A)2005-031  

Broader source: Energy.gov [DOE]

This is a request by OSRAM SYLVANIA PRODUCTS, INC for a DOE waiver of domestic and foreign patent rights under agreement DE-FG36-05GO85042.

16

Investigation of Fluorescence Degradation Mechanism of Hydrated BaMgAl10O17:Eu2+  

E-Print Network [OSTI]

. Mishra,a, *,z M. Raukas,a, * G. Marking,b P. Chen,c and P. Boolchandc a Osram Sylvania, Central Research by the intercalated water molecules is discussed. © 2005 The Electrochemical Society. DOI: 10.1149/1.2041927 All

Boolchand, Punit

17

A Behavioral SPICE Compatible Model of an Electrodeless Fluorescent Lamp Sam Ben-Yaakov*1  

E-Print Network [OSTI]

to the plasma. In the case of the lamp with electrodes, coupling is via wires. In the case of the electrodelessA Behavioral SPICE Compatible Model of an Electrodeless Fluorescent Lamp Sam Ben-Yaakov*1 , Moshe, SPICE compatible, model was developed for an electrodeless fluorescent lamp (OSRAM SYLVANIA ICETRON

18

Smart Lighting ERC Industrial Speaker Series  

E-Print Network [OSTI]

. Stough Director of Solid State Lighting Research Osram Sylvania Abstract: For the past five years or so fixture, etc.), and present problems for the Lighting Company trying to implement LED-based lighting them as the next `filament." Bio: Dr. Matthew Stough is the director of research in Solid-State

Lü, James Jian-Qiang

19

Sylvania, Ohio: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

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20

GE Research and Development | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for the World Introducing the Brazil Technology Center What Works: Mark Little on Green Energy Innovations Words of Wisdom for Young Women innovate Latest News GE,...

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

GE Healthcare Antibody Purification  

E-Print Network [OSTI]

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

22

GE Researcher Discusses Leadership | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor's note:ComputingFusionSan Ramon, USA SanOpens NewGE,GE

23

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

24

Purdue, GE Collaborate On Advanced Manufacturing | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the production side. For manufacturing operations the size of GE's, just a 1 percent improvement in manufacturing productivity would save 500 million." GE and Purdue have been...

25

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology...

26

GE, Aavid Commercialize Dual Cool Jets Technology | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

market. GE's broad array of industrial businesses requires highly advanced and reliable electronics that are increasingly driving the need for advanced cooling solutions to...

27

GE Wins Manufacturing Leadership Award |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

secured software platform that delivers data and visualizations to all major artificial lift functions at GE Oil & Gas. Several analytic modules were built to extract meaningful...

28

GE, University of Washington Disease Detection | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

excited about this team's unique ability to combine new designs for paper-based microfluidics with new nucleic amplification methods and GE's novel paper chemistries to help...

29

The GE Store  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism in Layered NbS2 and NbSe2DifferentThe Five FastestFuturePowering|GE

30

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to the 1-10MW range and accelerate the commercialization of GE Fuel Cell's Hybrid Solid Oxide Fuel Cell System. About GE GE (NYSE: GE) works on things that matter. The best...

31

PRELIMINARY SURVEY OF SYLVANIA-CORNING NUCLEAR CORPORATION METALLURGIC...  

Office of Legacy Management (LM)

LABORATORY BAYSIDE, NEW YORK Work performed by the Health and Safety Research Division Oak Ridge National Laboratory Oak Ridge, Tennessee 37830 March 1980 OAK RIDGE NATIONAL...

32

DOE - Office of Legacy Management -- Sylvania Corning Nuclear Corp Inc  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site - MO 02Sutton Steele and

33

DOE - Office of Legacy Management -- Sylvania Corning Plant - NY 19  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou areDowntown Site - MO 02Sutton Steele andPlant - NY

34

Sylvania Corporation, Hicksville, NY and Bayside, NY - Addendum to July  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline GalliumSuppressionSustainable SuccessSustainableL L 28, 2004 |

35

Sylvania Corporation, Hicksville, NY and Bayside, NY | Department of Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security AdministrationcontrollerNanocrystalline GalliumSuppressionSustainable SuccessSustainableL L 28, 2004 |NY

36

Sylvania Corporation, Hicksville, NY and Bayside NY | Department of Energy  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:YearRound-Up from the GridwiseSiteDepartmentChallengeCompliance7/109 Historical Perspective

37

PRELIMINARY SURVEY OF SYLVANIA-CORNING NUCLEAR CORPORATION METALLURGICAL LABORATORY  

Office of Legacy Management (LM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "ofEarlyEnergyDepartment ofDepartment ofof EnergyYou$0.C. 20545 OCT 28 1% - :NEW;ORAU/ I_ROHM AND

38

Cold Spray and GE Technology | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

difference of the work done at GE Global Research is the development of cold spray for additive manufacturing, where we adapt this novel coating process to build 3D shapes....

39

GE, Berkeley Energy Storage for Electric Vehicles | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Just Add Water: GE, Berkeley Lab Explore Possible Key to Energy Storage for Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

40

GE Wins Manufacturing Leadership Award |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-D PerformanceGE ProgressGE

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

GE, Aavid Commercialize Dual Cool Jets Technology | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-D PerformanceGE ProgressGEandGE,

42

Technology "Relay Race" Against Cancer | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

43

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent URIFrontier,Jump to:Wilmette, ILFyreStormGDI RenewableGE

44

Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassive Solar HomePromising Science for1 2011 Publications Wood, V., Panzer,Purdue, GE

45

About GE Global Research Center | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation InInformationCenterResearch Highlights MediaFuel Production ASUEMSL About EMSLAbout GE

46

Heat Transfer in GE Jet Engines | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Bigfront.jpgcommunity200cellHeat Transfer in GE Jet Engines Click to

47

GE, Berkeley Energy Storage for Electric Vehicles | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-D PerformanceGE

48

GE Partners on Microgrid Project | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor's note:ComputingFusionSan Ramon, USA SanOpens NewGE,

49

Ars Technica Visits GE's China Technology Center | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to someone byDear Friend, Please,LaboratoryDecadeTechnica visits GE's

50

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation SitesStandingtheirCheck InChemistry OxideChenChevron, GE form

51

Advanced Analytics | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUCProductstwrmrAre theAdministrator Referencesalkali metalsTiO2(110). |GE

52

Modeling of GE Appliances: Final Presentation  

SciTech Connect (OSTI)

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

53

Monolithic Ge-on-Si lasers for integrated photonics  

E-Print Network [OSTI]

We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

Liu, Jifeng

54

Ge-on-Si laser for silicon photonics  

E-Print Network [OSTI]

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

55

Engineer Receives UMass "Salute To Service" Award | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

November 22, 2013 - GE Global Research, the technology development arm of the General Electric Company (NYSE: GE), is proud to announce that Dr. Marshall Jones, a world renowned...

56

Crowdsourcing Wins Manufacturing Leadership 100 | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NY, May 22, 2013 - GE Global Research, the technology development arm of the General Electric Co. (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership...

57

Nanotextured Anti-Icing Surfaces | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Demonstrate Promising Anti-icing Nano Surfaces GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its...

58

Butterfly-Inspired Thermal Imaging | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research ...

59

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect (OSTI)

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

60

GE's Christine Furstoss Named to NACIE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

High Flux Commercial Illumination Solution with Intelligent Controls  

SciTech Connect (OSTI)

This report summarizes the work performed at OSRAM SYLVANIA under US Department of Energy contract DE-EE0003241 for developing a high efficiency LED-based luminaire. A novel light engine module (two versions: standard and super), power supply and luminaire mechanical parts were designed and tested. At steady-state, the luminaire luminous flux is 3156 lumens (lm), luminous efficacy 97.4 LPW and CRI (Ra) 88 at a correlated color temperature (CCT) of 3507K. When the luminaire is fitted with the super version of the light engine the efficacy reaches 130 LPW. In addition, the luminaire is provided with an intelligent control network capable of additional energy savings. The technology developed during the course of this project has been incorporated into a family of products. Recently, the first product in the family has been launched.

Camil Ghiu

2012-04-30T23:59:59.000Z

62

High Quality Down Lighting Luminaire with 73% Overall System Efficiency  

SciTech Connect (OSTI)

This report summarizes work to develop a high flux, high efficiency LED-based downlight at OSRAM SYLVANIA under US Department of Energy contract DE-FC26-08NT01582. A new high power LED and electronic driver were developed for these downlights. The LED achieved 100 lumens per watt efficacy and 1700 lumen flux output at a correlated color temperature of 3500K. The driver had 90% electrical conversion efficiency while maintaining excellent power quality with power factor >0.99, and total harmonic distortion <10%. Two styles of downlights using the LED and driver were shown to exceed the project targets for steady-state luminous efficacy and flux of 70 lumens per watt and 1300 lumens, respectively. Compared to similar existing downlights using compact fluorescent or LED sources, these downlights had much higher efficacy at nearly the same luminous flux.

Robert Harrison; Steven C. Allen; Joseph Bernier; Robert Harrison

2010-08-31T23:59:59.000Z

63

Gelcasting Polycrystalline Alumina  

SciTech Connect (OSTI)

OSRAM SYLVANIA INC. is a major U.S. manufacturer of high-intensity lighting. Among its products is the Lumalux TM line of high-pressure sodium vapor arc lamps, which are used for industrial, highway, and street lighting. The key to the performance of these lamps is the polycrystalline alumina (PCA) tube that is used to contain the plasma that is formed in the electric arc. That plasma consists of ionized sodium, mercury, and xenon vapors. The key attributes of the PCA tubes are their transparency ({approximately}97% total transmittance in the visible), their refractoriness (inner wall temperature can reach l2OOC), and their chemical resistance (sodium and mercury vapor are extremely corrosive). The current efficiency of the lamps is very high, up to 100 initial lumens per watt. (Compare incandescent lamps 10-20 lumens per watt, fluorescent lamps 25-90 lumens per watt.)

Janney, M.A.; Zuk, K.J.; Wei, G.C.

2000-01-01T23:59:59.000Z

64

The Majorana Ge-76 double-beta decay project  

SciTech Connect (OSTI)

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

65

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network [OSTI]

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

66

Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface  

E-Print Network [OSTI]

Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

Mazzeo, G.

67

33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 711, 2001  

E-Print Network [OSTI]

Preface 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 7­11, 2001 The International Lie`ge Colloquium on Ocean Dynamics is organized annually. The topic differs from year to year. Assembling a group of active and eminent scien- tists from various countries and often different disci

Leonard, John J.

68

Stable, free-standing Ge nanocrystals  

SciTech Connect (OSTI)

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

69

GE Solar Power | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation, search Equivalent URIFrontier,Jump to:Wilmette, ILFyreStormGDI Name: GE

70

Properties of excited states in {sup 77}Ge.  

SciTech Connect (OSTI)

The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

2009-07-01T23:59:59.000Z

71

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect (OSTI)

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

72

Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge  

SciTech Connect (OSTI)

The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

2009-01-28T23:59:59.000Z

73

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

74

Upgrade of CEBAF from 6-GeV To 12-GeV: Status  

SciTech Connect (OSTI)

The CEBAF accelerator is being upgraded from 6 GeV to 12 GeV by the US Department of Energy. The accelerator upgrade is being done within the existing tunnel footprint. The accelerator upgrade includes: 10 new srfbased high-performance cryomodules plus RF systems, doubling the 2K helium plants capability, upgrading the existing beamlines to operate at nearly double the original performance envelope, and adding a beamline to a new experimental area. Construction is over 75% complete with final completion projected for late FY13. Details of the upgrade and status of the work will be presented.

Harwood, Leigh H.

2013-04-01T23:59:59.000Z

75

GE Unveils High-Tech Superhero GENIUS MAN | GE Global Research  

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76

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect (OSTI)

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Universit degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

77

New Global Research Website | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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78

3D Printed Toy | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLasDelivered‰PNGExperience hands-onASTROPHYSICS H.CarbonMarch Value4 3.P D AT E S038thGE

79

Patent Record Announcement | GE Global Research  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - September 2006 TheSteven AshbyDepartment ofGE's E. Trifon Laskaris Receives 200th

80

GE Global Research in San Ramon, California  

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Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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81

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect (OSTI)

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

82

GE Technology to Help Canada Province Meet Growing Energy Needs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

83

Media Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

for its 310 million 12 GeV Upgrade project. When: Tuesday, April 14, 2009. Where: CEBAF Center, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue,...

84

Titan propels GE wind turbine research into new territory | ornl...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

85

3 GeV Injector Design Handbook  

SciTech Connect (OSTI)

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

86

Project-X Workshop 120 GeV Target  

E-Print Network [OSTI]

Project-X Workshop 120 GeV Target Summary ­ Workshop # 1 N. Simos, M. Martens #12;Project-X Workshop Challenges OVERVIEW Driven by 120 GeV/170 TP-per-spill · Short Term: 170 TPs/2us-spill (materials an existing 400 kW facility ­ Constraints #12;Project-X Workshop Presentations - Discussions · Engineering

McDonald, Kirk

87

Volcanic rifting at Martian grabens Daniel Me`ge,1  

E-Print Network [OSTI]

Volcanic rifting at Martian grabens Daniel Me`ge,1 Anthony C. Cook,2,3 Erwan Garel,4 Yves: Solar System Objects: Mars; 8121 Tectonophysics: Dynamics, convection currents and mantle plumes; 8010: Me`ge, D., A. C. Cook, E. Garel, Y. Lagabrielle, and M.-H. Cormier, Volcanic rifting at Martian

Mege, Daniel

88

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network [OSTI]

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

89

E-Print Network 3.0 - alloy-ge Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

11 IEEE ELECTRON DEVICE LETTERS, VOL. 18, NO. 9, SEPTEMBER 1997 411 A p-Ge C n-Si Heterojunction Diode Summary: -6 by altering the Ge:C ratio. The binary alloy Ge C also...

90

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network [OSTI]

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mszros; M. J. Rees

2011-04-26T23:59:59.000Z

91

GE Progress Includes 140 Things We Made Yesterday | GE Global Research  

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AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-D PerformanceGE Progress Includes

92

GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global Research  

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93

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary)morphinanInformation Desert Southwest Region service area. TheEPSCI HomeTours,FrequentlyFundedWu,Newsroom OurGE

94

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect (OSTI)

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

95

Ge-on-Si laser operating at room temperature  

E-Print Network [OSTI]

Monolithic lasers on Si are ideal for high-volume and large-scale electronicphotonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

96

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network [OSTI]

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

97

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

98

Endeavour Launch 4: From Columbia to Atlantis | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

enginefeaturedimage3 GE Innovation and Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old...

99

Be a part of something bigger than yourself GE Healthcare  

E-Print Network [OSTI]

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

100

"Big Picture" Process Modeling Tools |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

window) Using process modeling tools to attain cost-effective results for GE customers Jimmy Lopez 2015.03.26 Sometimes, we need to look outside the box to realize the powerful...

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Technology makes reds "pop" in LED displays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

102

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect (OSTI)

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

103

AC transport in p-Ge/GeSi quantum well in high magnetic fields  

SciTech Connect (OSTI)

The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.35.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the two-site model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|?4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Suslov, A. V. [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Mironov, O. A. [Warwick SEMINANO R and D Center, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Knel, H. von [Laboratorium fr Festkrperphysik ETH Zrich, CH-8093 Zrich (Switzerland)

2014-08-20T23:59:59.000Z

104

Co silicide formation on SiGeC/Si and SiGe/Si layers R. A. Donatona)  

E-Print Network [OSTI]

on the total strain energy in the layer and restricts the applications where high Ge concentrations are needed spectrometry, secondary ion mass spectroscopy SIMS , and four point probe for sheet resistance measure- ments

105

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect (OSTI)

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

106

Background p(450 GeV/c)-p,d (NA51)  

E-Print Network [OSTI]

#12;#12;Background ' Open charm J / Drell-Yan #12;* p(450 GeV/c)-p,d (NA51) 208 16 p(200 Ge) 32 p(450 GeV/c)-A (A=C,Al,Cu,W) (NA38) 10101 10101010 652 3 4 B targetprojectile B(J/)/(AB)(nb) 5 4 3 Pb(208x158 GeV/c)-Pb (NA50) S(32x200 GeV/c)-U (NA38) p(200 GeV/c)-W (NA38) p(450 GeV/c)-A (A=p,d) (NA

Paris-Sud XI, Universit de

107

Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering  

SciTech Connect (OSTI)

We have investigated the nature of violet-blue emission from (Ge, Er) codoped Si oxides (Ge+Er+SiO{sub 2}) using photoluminescence (PL) and positron annihilation spectroscopy (PAS) measurements. The PL spectra and PAS analysis for a control Ge-doped SiO{sub 2} (Ge+SiO{sub 2}) indicate that Ge-associated neutral oxygen vacancies (Ge-NOV) are likely responsible for the major emission in the violet-blue band. For Ge+Er+SiO{sub 2}, both Ge-NOV and GeO color centers are believed to be responsible for the emission band. The addition of Er has a significant influence on the emission, which is discussed in terms of Er-concentration-related structural change in the Ge+Er+SiO{sub 2}.

Heng, C. L.; Chelomentsev, E.; Peng, Z. L.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada); Simpson, P. J. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

2009-01-01T23:59:59.000Z

108

Spin Structure with JLab 6 and 12 GeV  

SciTech Connect (OSTI)

Highlights of JLab 6 GeV results on spin structure study and plan for 12 GeV program. Spin structure study is full of surprises and puzzles. A decade of experiments from JLab yield these exciting results: (1) valence spin structure; (2) precision measurements of g{sub 2}/d{sub 2} - high-twist; (3) spin sum rules and polarizabilities; and (4) first neutron transversity. There is a bright future as the 12 GeV Upgrade will greatly enhance our capability: (1) Precision determination of the valence quark spin structure flavor separation; (2) Precision measurements of g{sub 2}/d{sub 2}; and (3) Precision extraction of transversity/tensor charge.

Jian-Ping Chen

2012-02-01T23:59:59.000Z

109

Jefferson Lab 12 GeV CEBAF Upgrade  

SciTech Connect (OSTI)

The existing continuous electron beam accelerator facility (CEBAF) at Thomas Jefferson National Accelerator Facility (TJNAF) is a 5-pass, recirculating cw electron Linac operating at ~6 GeV and is devoted to basic research in nuclear physics. The 12 GeV CEBAF Upgrade is a $310 M project, sponsored by the Department of Energy (DOE) Office of Nuclear Physics, that will expand its research capabilities substantially by doubling the maximum energy and adding major new experimental apparatus. The project received construction approval in September 2008 and has started the major procurement process. The cryogenic aspects of the 12 GeV CEBAF Upgrade includes: doubling the accelerating voltages of the Linacs by adding ten new high-performance, superconducting radiofrequency (SRF) cryomodules (CMs) to the existing 42 1/4 cryomodules; doubling of the 2 K cryogenics plant; and the addition of eight superconducting magnets.

Claus Rode

2010-04-01T23:59:59.000Z

110

Reducing 68Ge Background in Dark Matter Experiments  

SciTech Connect (OSTI)

Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

Kouzes, Richard T.; Orrell, John L.

2011-03-01T23:59:59.000Z

111

The 6 GeV TMD Program at Jefferson Lab  

SciTech Connect (OSTI)

The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

Puckett, Andrew J. [University of Connecticut, JLAB

2015-01-01T23:59:59.000Z

112

Production and test of isotopically modified Ge detectors for GERDA  

SciTech Connect (OSTI)

The viability of producing BEGe-type detectors from isotopically modified germanium for the GERDA experiment is demonstrated by a complete test of the supply chain. GERDA is built to search for neutrinoless double beta (0v{beta}{beta}) decay of Ge using high-purity germanium detectors made of material enriched in {sup 76}Ge. To reach a sensitivity for 0v{beta}{beta} decay of <1.4 x 10{sup 26} years, new active background suppression techniques are necessary. BEGe detectors enable a capability to efficiently identify and reject background events, while keeping large acceptance of 0v{beta}{beta} decay signal, by using novel pulse shape discrimination (PSD) techniques. The PSD as well as spectroscopic performance of prototype BEGe detectors from isotopically modified Ge was verified by comprehensive testing. (authors)

Budjas, D. [Physik-Dept. E15, Technishe Universitaet Muenchen, James-Franck-Strasse 1, Garching bei Muenchen, D-85748 (Germany)

2011-07-01T23:59:59.000Z

113

Demand Response Performance of GE Hybrid Heat Pump Water Heater  

SciTech Connect (OSTI)

This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation Brillion-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in Standard electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in Heat Pump mode to provide the comparison to heat pump-only demand response. It is expected that Hybrid DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

2013-07-01T23:59:59.000Z

114

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

115

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

116

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network [OSTI]

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

117

Structural Changes in Vitreous GeSe4 under Pressure  

SciTech Connect (OSTI)

High-energy X-ray diffraction experiments have been performed on GeSe{sub 4} glass up to pressures of 8.6 GPa, and the equation of state has been measured up to 10 GPa. The X-ray structure factors reveal a decrease in the first sharp diffraction peak intensity and broadening with pressure, which signifies a break-up of the intermediate range order in the glass. In contrast, the principal peak in the structure factor shows an increase in intensity and a sharpening with pressure, which is attributed to an increase in extended range order and coherence of the compacted units. The average nearest neighbor coordination number is found to remain constant in GeSe{sub 4} glass (within experimental error) over the pressure range measured. This is in contrast with the gradual increase found in GeSe{sub 2} glass. Rather, in GeSe{sub 4} glass the densification mechanism is shown to be associated with large inward shifts of the second neighbor and higher coordination shells. These features appear as additional correlations at 3.3 and 5.3 {angstrom} in the differences taken between adjacent pair distribution functions with increasing pressure.

Skinner L. B.; Parise J.; Benmore, C.J,; Antao, S.; Soignard, E.; Amin, S.A.; Bychkov, E.; Rissi, E. and Yarger, J.L.

2011-11-21T23:59:59.000Z

118

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect (OSTI)

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

119

Nucleon Form Factors experiments with 12 GeV CEBAF  

SciTech Connect (OSTI)

A number of precision form factor experiments at high momentum transfer will be performed with the 11 GeV electron beam of CEBAF. We review the approved proposals and the conceptual schemes of several new suggestions. Form factor data will serve as a major input for the construction of a tomographic image of the nucleon.

Wojtsekhowski, Bogdan

2008-11-01T23:59:59.000Z

120

The JLAB 12 GeV Energy Upgrade of CEBAF  

SciTech Connect (OSTI)

This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

Harwood, Leigh H. [JLAB

2013-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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121

Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water  

E-Print Network [OSTI]

sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics Participants Project Sponsors: DOE Building America Program/Bonneville Power Administration Contractor: PNNL

122

Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties  

SciTech Connect (OSTI)

Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y???0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y???0.06, the CVD precursors used were digermane Ge{sub 2}H{sub 6} and deuterated stannane SnD{sub 4}. For y???0.06, the Ge precursor was changed to trigermane Ge{sub 3}H{sub 8,} whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge{sub 4}H{sub 10} as the Ge source. The photoluminescence intensity from Ge{sub 1?y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1?y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1?y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1?y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1?y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1??m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1?y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1?x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

2014-10-07T23:59:59.000Z

123

Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy  

SciTech Connect (OSTI)

Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent IIVI, IIIV and IVVI semiconductor quantum dots. Here, we use relatively unexplored IV/IIVI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial IIVI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/IIVI nanocrystals are reproducibly 13 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/IIVI nanocrystals. We expect this synthetic IV/IIVI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

2014-08-26T23:59:59.000Z

124

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network [OSTI]

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

125

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

126

Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications  

E-Print Network [OSTI]

Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

Bai, Yu, Ph.D. Massachusetts Institute of Technology

2011-01-01T23:59:59.000Z

127

$J/?$, $?(2S)$ Production in pp Collisions at E=510 GeV  

E-Print Network [OSTI]

This brief report is an extension of studies of $J/\\Psi,\\Psi(2S)$ production in pp collisions at the BNL with E=$\\sqrt{s}$=200 GeV to E=510 GeV at PHENIX.

Leonard S. Kisslinger; Debasish Das

2014-10-06T23:59:59.000Z

128

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source atDOE's Argonne...

129

Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications  

E-Print Network [OSTI]

This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

Goh, Johnathan Jian Ming

2006-01-01T23:59:59.000Z

130

Characterization of EER4 and SAR1 in Relation to Their Role in Ethylene Signaling and Dampening Responses  

E-Print Network [OSTI]

Sylvania Cool White fluorescent bulbs, Danvers, MA) at 20 oSylvania Gro-Lite fluorescent bulbs, Danvers, MA) at 21 o C

Robles, Linda

2010-01-01T23:59:59.000Z

131

Directional correlation of [gamma] transitions in [sup 72]Ge following the decay of [sup 72]Ga  

SciTech Connect (OSTI)

Directional correlations of coincident gamma transitions in [sup 72]Ge have been measured following the [beta][sup [minus

Landulfo, E.; Saxena, R.N.; Zamboni, C.B.; Lapolli, A.L. (Instituto de Pesquisas Energeticas e Nucleares, IPEN-Comissao Nacional de Energia Nuclear de Brasil, Sao Paulo, Sao Paulo (Brazil))

1994-08-01T23:59:59.000Z

132

Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic Field Laboratory  

E-Print Network [OSTI]

Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic focused on the coexistence of superconductivity and ferromagnetism, including UGe2, URhGe, and UCoGe. In these materials, superconductivity develops below the ferromagnetic Curie temperature TC without destroying

Weston, Ken

133

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect (OSTI)

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

134

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect (OSTI)

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

135

The 12 GeV Energy Upgrade at Jefferson Laboratory  

SciTech Connect (OSTI)

Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

Pilat, Fulvia C.

2012-09-01T23:59:59.000Z

136

Partners for progress in HVDC: GE and EPRI  

SciTech Connect (OSTI)

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

137

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

138

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network [OSTI]

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

139

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

140

Gamma-Ray Bursts Above 1 GeV  

E-Print Network [OSTI]

One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

Matthew G. Baring

1997-11-21T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
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We encourage you to perform a real-time search of NLEBeta
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141

Exclusive processes at JLab at 6 GeV  

SciTech Connect (OSTI)

Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

Kim, Andrey [University of Connecticut, JLAB

2015-01-01T23:59:59.000Z

142

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect (OSTI)

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.501.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

143

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

144

Characterization of second-phase plates in a Gd5Ge3 intermetallic compound  

SciTech Connect (OSTI)

Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

Cao, Qing [Ames Laboratory; Chumbley, Leonard S. [Ames Laboratory

2013-05-16T23:59:59.000Z

145

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect (OSTI)

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) , b=12.475(5) , c=17.077(7) , V=1941.5(15) {sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UVvis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. The first example of inorganicorganic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

146

Highly Efficient Small Form Factor LED Retrofit Lamp  

SciTech Connect (OSTI)

This report summarizes work to develop a high efficiency LED-based MR16 lamp downlight at OSRAM SYLVANIA under US Department of Energy contract DE-EE0000611. A new multichip LED package, electronic driver, and reflector optic were developed for these lamps. At steady-state, the lamp luminous flux was 409 lumens (lm), luminous efficacy of 87 lumens per watt (LPW), CRI (Ra) of 87, and R9 of 85 at a correlated color temperature (CCT) of 3285K. The LED alone achieved 120 lumens per watt efficacy and 600 lumen flux output at 25 C. The driver had 90% electrical conversion efficiency while maintaining excellent power quality with power factor >0.90 at a power of only 5 watts. Compared to similar existing MR16 lamps using LED sources, these lamps had much higher efficacy and color quality. The objective of this work was to demonstrate a LED-based MR16 retrofit lamp for replacement of 35W halogen MR16 lamps having (1) luminous flux of 500 lumens, (2) luminous efficacy of 100 lumens per watt, (3) beam angle less than 40{sup o} and center beam candlepower of at least 1000 candelas, and (4) excellent color quality.

Steven Allen; Fred Palmer; Ming Li

2011-09-11T23:59:59.000Z

147

The 12 GeV JLab Upgrade Project  

E-Print Network [OSTI]

The upgrade of the CEBAF Accelerator at Jefferson Lab to 12 GeV will deliver high luminosity and high quality beams, which will open unique opportunities for studies of the quark and gluon structure of hadrons in the valence region. Such physics will be made accessible by substantial additions to the experimental equipment in combination with the increased energy reach of the upgraded machine. The emphasis of the talk will be on the program in a new experimental Hall D designed to search for gluonic excitations.

Elton S. Smith

2009-01-21T23:59:59.000Z

148

Diamond turning of Si and Ge single crystals  

SciTech Connect (OSTI)

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

149

The Jefferson Lab 12 GeV Upgrade  

SciTech Connect (OSTI)

A major upgrade of the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is in progress. Construction began in 2008 and the project should be completed in 2015. The upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and new experimental equipment in three of the experimental halls. A brief overview of this upgrade project is presented along with some highlights of the anticipated experimental program.

R.D. McKeown

2011-10-01T23:59:59.000Z

150

The 12 GeV JLab Upgrade Project  

SciTech Connect (OSTI)

The upgrade of the CEBAF Accelerator at Jefferson Lab to 12 GeV will deliver high luminosity and high quality beams, which will open unique opportunities for studies of the quark and gluon structure of hadrons in the valence region. Such physics will be made accessible by substantial additions to the experimental equipment in combination with the increased energy reach of the upgraded machine. The emphasis of the talk will be on the program in a new experimental Hall D designed to search for gluonic excitations.

Smith, Elton

2009-01-01T23:59:59.000Z

151

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG |September2-SCORECARD-01-24-13DiscoversGE Solar Facility Secretary Chu Speaks

152

Patriotic Sands Form the Science of Summer | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1 - September 2006 TheSteven AshbyDepartment ofGE's E.Gilman About Us Patrick

153

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision hasInformation Earth's HeatMexico:CommunityNorthwest Basin and RangeNorvento USA(TXR150000)B (GE

154

GE Technology to Help Canada Province Meet Growing Energy Needs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky Learning Fun with Big SkyDIII-D PerformanceGE Progress

155

Engineers Named to National Academy | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing Zirconia NanoparticlesSmart GrocerDepartment&Engineering GE Engineers

156

Extended Battery Life in Electric Vehicles | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series toESnet4:Epitaxial Thin FilmEquipment SSRLExploring theExplosivesGE, Ford,

157

Global Research on On The Verge | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsingFun with Big Sky LearningGet Assistance GetGiantOn The Verge Visits GE's Global

158

Manufacturing - GE Appliances, ORNL sign agreement | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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159

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data CenterFranconia, Virginia: Energy Resources Jump to: navigation,Ohio: EnergyGrasslandsGreen2V Jump506384°,AES GE EFS Jump to: navigation,

160

Microgravity and Vision in Astronauts | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
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to obtain the most current and comprehensive results.


161

General Electric in India GE | Open Energy Information  

Open Energy Info (EERE)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home5b9fcbce19 No revision has beenFfe2fb55-352f-473b-a2dd-50ae8b27f0a6TheoreticalFuelCellGemini Solar DevelopmentCompression JumpGE

162

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect (OSTI)

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

163

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

164

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network [OSTI]

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

165

The Jefferson Lab program: From 6 GeV operations to the 12 GeV upgrade  

SciTech Connect (OSTI)

The Thomas Jefferson National Laboratory and the CEBAF accelerator operated for more than a decade, running a comprehensive scientific program that improved our understanding of the strong interaction. The facility is now moving toward an upgrade of the machine, from 6 to 12 GeV; a new experimental hall will be added and the equipment of the three existing halls will be enhanced. In this contribution some selected results from the rich physics program run at JLab, as well as the prospects for the near future, will be presented.

Marco Battaglieri

2012-04-01T23:59:59.000Z

166

Sideward Flow in Au + Au Collisions Between 2A GeV and 8A GeV  

E-Print Network [OSTI]

Using the large acceptance Time Projection Chamber of experiment E895 at Brookhaven, measurements of collective sideward flow in Au + Au collisions at beam energies of 2, 4, 6 and 8A GeV are presented in the form of in-plane transverse momentum and the first Fourier coefficient of azimuthal anisotropy v_1. These measurements indicate a smooth variation of sideward flow as a function of beam energy. The data are compared with four nuclear transport models which have an orientation towards this energy range. All four exhibit some qualitative trends similar to those found in the data, although none shows a consistent pattern of agreement within experimental uncertainties.

E895 Collaboration; H. Liu; N. N. Ajitanand; J. Alexander; M. Anderson; D. Best; F. P. Brady; T. Case; W. Caskey; D. Cebra; J. Chance; B. Cole; K. Crowe; A. Das; J. Draper; M. Gilkes; S. Gushue; M. Heffner; A. Hirsch; E. Hjort; L. Huo; M. Justice; M. Kaplan; D. Keane; J. Kintner; J. Klay; D. Krofcheck; R. Lacey; M. A. Lisa; Y. M. Liu; R. McGrath; Z. Milosevich; G. Odyniec; D. Olson; S. Y. Panitkin; N. Porile; G. Rai; H. G. Ritter; J. Romero; R. Scharenberg; L. S. Schroeder; B. Srivastava; N. T. B. Stone; T. J. M. Symons; S. Wang; J. Whitfield; T. Wienold; R. Witt; L. Wood; X. Yang; W. N. Zhang; Y. Zhang

2000-05-24T23:59:59.000Z

167

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

168

Search for GeV GRBs at Chacaltaya  

SciTech Connect (OSTI)

In this paper we present the results of a search for GeV Gamma Ray Bursts made by the INCA experiment during the first 9 months of operation. INCA, an air shower array located at Mount Chacaltaya (Bolivia) at 5200 m a.s.l., has been searching for GRBs since December 1996. Up to August, 1997, 34 GRBs detected by BATSE occurred in the field of view of the experiment. For any burst, the counting rate of the array in the 2 hours interval around the burst trigger time has been studied. No significant excess has been observed. Assuming for the bursts a power low energy spectrum extending up to 1 TeV with a slope {alpha}=-2 and a duration of 10 s, the obtained 1 GeV-1 TeV energy fluence upper limits range from 7.9 10{sup -5} erg cm{sup -2} to 3.5 10{sup -3} erg cm{sup -2} depending on the event zenith angles.

Castellina, A.; Ghia, P. L.; Morello, C.; Trinchero, G.; Vallania, P.; Vernetto, S. [Istituto di Cosmogeofisica del C.N.R., Torino (Italy); Navarra, G.; Saavedra, O. [Dipartimento di Fisica Generale dell'Universita' di Torino (Italy); Yoshii, H. [Department of Physics, Ehime University, Ehime 790 (Japan); Kaneko, T. [Department of Physics, Okayama University, Okayama 700 (Japan); Kakimoto, K. [Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152 (Japan); Nishi, K. [Institute of Physical and Chemical Research, Wako, Saitama 351-01 (Japan); Cabrera, R.; Urzagasti, D.; Velarde, A. [Instituto de Investigaciones Fisicas, Universidad Mayor de San Andres, La Paz (Bolivia, Plurinational State of); Barthelmy, S. D.; Butterworth, P.; Cline, T. L.; Gehrels, N. [NASA Goddard Space Flight Center, Greenbelt, Maryland 20771 (United States); Fishman, G. J. [NASA Marshall Space Flight Center, Huntsville, Alabama 35812 (United States)] (and others)

1998-05-16T23:59:59.000Z

169

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect (OSTI)

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

170

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

171

18.5 Million in New Research Program Funding Announced, GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

172

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

173

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Energy Savers [EERE]

2012 More Documents & Publications AVTA: Aerovironment AC Level 2 Charging System Testing Results AVTA: GE Smart Grid Capable AC Level 2 Testing Results AVTA: Siemens-VersiCharge...

174

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect (OSTI)

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

175

The CMS barrel calorimeter response to particle beams from 2-GeV/c to 350-GeV/c  

SciTech Connect (OSTI)

The response of the CMS barrel calorimeter (electromagnetic plus hadronic) to hadrons, electrons and muons over a wide momentum range from 2 to 350 GeV/c has been measured. To our knowledge, this is the widest range of momenta in which any calorimeter system has been studied. These tests, carried out at the H2 beam-line at CERN, provide a wealth of information, especially at low energies. The analysis of the differences in calorimeter response to charged pions, kaons, protons and antiprotons and a detailed discussion of the underlying phenomena are presented. We also show techniques that apply corrections to the signals from the considerably different electromagnetic (EB) and hadronic (HB) barrel calorimeters in reconstructing the energies of hadrons. Above 5 GeV/c, these corrections improve the energy resolution of the combined system where the stochastic term equals 84.7 {+-} 1.6% and the constant term is 7.4 {+-} 0.8%. The corrected mean response remains constant within 1.3% rms.

Abdullin, S.; /Moscow, ITEP; Abramov, V.; /Serpukhov, IHEP; Acharya, B.; /Tata Inst.; Adam, N.; /Princeton U.; Adams, M.; /Illinois U., Chicago; Adzic, P.; /Belgrade U.; Akchurin, N.; /Texas Tech.; Akgun, U.; Albayrak, E.; /Iowa U.; Alemany-Fernandez, R.; Almeida, N.; /Lisbon, LIFEP /Democritos Nucl. Res. Ctr. /Virginia U. /Iowa State U.

2009-01-01T23:59:59.000Z

176

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

177

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

178

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

179

Pressure Safety of JLAB 12GeV Upgrade Cryomodule  

SciTech Connect (OSTI)

This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Labs 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLABs methodologies for implementation of the 10 CFR 851 requirements are described.

Cheng, Gary [JLAB; Wiseman, Mark A. [JLAB; Daly, Ed [JLAB

2009-11-01T23:59:59.000Z

180

Blazar Variability and Evolution in the GeV Regime  

E-Print Network [OSTI]

One of the most important problem of the blazar astrophysics is to understand the physical origin of the blazar sequence. In this study, we focus on the GeV gamma-ray variability of blazars and evolution perspective we search the relation between the redshift and the variability amplitude of blazars for each blazar subclass. We analyzed the Fermi-LAT data of the TeV blazars and the bright AGNs (flux $\\geq$ 4$\\times10^{-9}$ cm$^{-2}$s$^{-1}$) selected from the 2LAC (the 2nd LAT AGN catalog) data base. As a result, we found a hint of the correlation between the redshift and the variability amplitude in the FSRQs. Furthermore the BL Lacs which have relatively lower peak frequency of the synchrotron radiation and relatively lower redshift, have a tendency to have a smaller variability amplitude.

Tsujimoto, S; Nishijima, K; Kodani, K

2015-01-01T23:59:59.000Z

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181

Antiferromagnetic ordering in NdAuGe compound  

SciTech Connect (OSTI)

The compound NdAuGe was investigated by means of electrical resistivity, ?(T), magnetic susceptibility, ?(T), magnetization, ?(?{sub 0}H), and specific heat, C{sub p}(T), measurements. Powder X-ray diffraction studies confirm a hexagonal LiGaGe-type structure with space group P6{sub 3}mc (No. 186). ?(T) data show normal metallic behaviour and a tendency toward saturation at higher temperatures. The low temperature ?(T) data indicate a phase transition around 3.8?K. The low field dc ?(T) data show an antiferromagnetic anomaly associated with a Nel temperature at T{sub N}?=?3.7?K close to the phase transition observed in ?(T) results. At higher temperatures, ?(T) follows the paramagnetic Curie-Weiss behaviour with an effective magnetic moment ?{sub eff}=3.546(4)??{sub B} and a paramagnetic Weiss temperature of ?{sub p}=?6.1(4)?K. The value obtained for ?{sub eff} is close to the value of 3.62??{sub B} expected for the free Nd{sup 3+}-ion. ?(?{sub 0}H) shows a linear behaviour with applied field up to 3?T with an evidence of metamagnetic behaviour above 3?T. C{sub p}(T) confirms the magnetic phase transition at T{sub N}?=?3.4?K. The 4f-electron specific heat indicates a Schottky-type anomaly around 16.5?K with energy splitting ?{sub 1}=25.8(4) K and ?{sub 2}=50.7(4) K of the Nd{sup 3+}?(J?=?9/2) multiplet, that are associated with, respectively, the first and second excited states of the Nd{sup 3+}-ion.

Bashir, A. K. H.; Tchoula Tchokont, M. B., E-mail: mtchokonte@uwc.ac.za [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Snyman, J. L.; Sondezi, B. M.; Strydom, A. M. [Department of Physics, University of Johannesburg, Auckland Park 2006 (South Africa)

2014-05-07T23:59:59.000Z

182

Large-angle production of charged pions by 3 GeV/c - 12 GeV/c protons on carbon, copper and tin targets  

E-Print Network [OSTI]

A measurement of the double-differential $\\pi^{\\pm}$ production cross-section in proton--carbon, proton--copper and proton--tin collisions in the range of pion momentum $100 \\MeVc \\leq p < 800 \\MeVc$ and angle $0.35 \\rad \\le \\theta <2.15 \\rad$ is presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was done using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. An elaborate system of detectors in the beam line ensured the identification of the incident particles. Results are shown for the double-differential cross-sections at four incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc and 12 \\GeVc).

HARP Collaboration

2007-09-21T23:59:59.000Z

183

Signal modeling of high-purity Ge detectors with a small read-out electrode and application to neutrinoless double beta decay search in Ge-76  

E-Print Network [OSTI]

The GERDA experiment searches for the neutrinoless double beta decay of Ge-76 using high-purity germanium detectors enriched in Ge-76. The analysis of the signal time structure provides a powerful tool to identify neutrinoless double beta decay events and to discriminate them from gamma-ray induced backgrounds. Enhanced pulse shape discrimination capabilities of "Broad Energy Germanium" detectors with a small read-out electrode have been recently reported. This paper describes the full simulation of the response of such a detector, including the Monte Carlo modeling of radiation interaction and subsequent signal shape calculation. A pulse shape discrimination method based on the ratio between the maximum current signal amplitude and the event energy applied to the simulated data shows quantitative agreement with the experimental data acquired with calibration sources. The simulation has been used to study the survival probabilities of the decays which occur inside the detector volume and are difficult to assess experimentally. Such internal decay events are produced by the cosmogenic radio-isotopes Ge-68 and Co-60 and the neutrinoless double beta decay of Ge-76. Fixing the experimental acceptance of the double escape peak of the 2.614 MeV photon to 90%, the estimated survival probabilities at Qbb = 2.039 MeV are (86+-3)% for Ge-76 neutrinoless double beta decays, (4.5+-0.3)% for the Ge-68 daughter Ga-68, and (0.9+0.4-0.2)% for Co-60 decays.

M. Agostini; C. A. Ur; D. Budj; E. Bellotti; R. Brugnera; C. M. Cattadori; A. di Vacri; A. Garfagnini; L. Pandola; S. Schnert

2011-01-17T23:59:59.000Z

184

FTIR Emission Spectra, Molecular Constants, and Potential Curve of Ground State GeO  

E-Print Network [OSTI]

FTIR Emission Spectra, Molecular Constants, and Potential Curve of Ground State GeO Edward G. Lee-resolution FTIR emission spectroscopy measurements for the five common isoto- pomers of GeO are combined­9), photoelectron spectroscopy (10), electronic absorption (11­13), and emission (14) spectroscopy, and in matrix

Le Roy, Robert J.

185

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network [OSTI]

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

186

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network [OSTI]

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

187

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network [OSTI]

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e()X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

188

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

189

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network [OSTI]

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

190

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network [OSTI]

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

191

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect (OSTI)

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

192

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

193

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

194

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect (OSTI)

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

195

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

196

Shower characteristics of particles with momenta from up to 100 GeV in the CALICE Scintillator-Tungsten HCAL  

E-Print Network [OSTI]

Shower characteristics of particles with momenta from up to 100 GeV in the CALICE Scintillator-Tungsten HCAL

Klempt W

2015-01-01T23:59:59.000Z

197

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar  

E-Print Network [OSTI]

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited in the suboxide on the GeNW, whose germanium- enrichment surface was obtained to form a germanide contact at low

Jo, Moon-Ho

198

Amorphous Ge quantum dots embedded in SiO{sub 2} formed by low energy ion implantation  

SciTech Connect (OSTI)

Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO{sub 2}, i.e., Ge-SiO{sub 2} quantum dot composites, have been formed by ion implantation of {sup 74}Ge{sup +} isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO{sub 2} obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed.

Zhao, J. P. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Physics, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Huang, D. X.; Jacobson, A. J. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Chen, Z. Y.; Makarenkov, B. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Chu, W. K. [Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 (United States); Department of Physics, University of Houston, Houston, Texas 77204 (United States); Bahrim, B. [Department of Chemistry and Physics, Lamar University, Beaumont, Texas 77710 (United States); Rabalais, J. W. [Department of Chemistry, University of Houston, Houston, Texas 77204 (United States); Department of Chemistry and Physics, Lamar University, Beaumont, Texas 77710 (United States)

2008-06-15T23:59:59.000Z

199

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001)  

E-Print Network [OSTI]

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001) Cristian V that dimer- vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(0 0 1), but not on Ge(0 0 1 the vacancies on Si(0 0 1) and Ge(0 0 1). We identify three energetic parameters which characterize the DVs

Ciobanu, Cristian

200

Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions  

SciTech Connect (OSTI)

In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Buljan, M. [Ruder Boskovic Institute, Bijenicka cesta 54, Zagreb 10000 (Croatia); Chahboun, A. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Physics Department, FST Tanger, Tanger BP 416 (Morocco); Roldan, M. A.; Molina, S. I. [Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Cadiz (Spain); Bernstorff, S. [Sincrotrone Trieste, SS 14 km163, 5, Basovizza 34012 (Italy); Varela, M.; Pennycook, S. J. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Barradas, N. P.; Alves, E. [Instituto Superior Tecnico e Instituto Tecnologico e Nuclear-, EN10, Sacavem 2686-953 (Portugal)

2012-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions  

SciTech Connect (OSTI)

In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

Pinto, S. [University of Minho, Portugal; Roldan Gutierrez, Manuel A [ORNL; Ramos, M. M.D. [University of Minho, Portugal; Gomes, M.J.M. [University of Minho, Portugal; Molina, S. I. [Universidad de Cadiz, Spain; Pennycook, Stephen J [ORNL; Varela del Arco, Maria [ORNL; Buljan, M. [R. Boskovic Institute, Zagreb, Croatia; Barradas, N. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Alves, E. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Chahboun, A. [FST Tanger, Morocco; Bernstorff, S. [Sincrotrone Trieste, Basovizza, Italy

2012-01-01T23:59:59.000Z

202

Potential improvements in SiGe radioisotope thermoelectric generator performance  

SciTech Connect (OSTI)

In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

Mowery, A.L. [4 Myrtle Bank Lane, Hilton Head Island, South Carolina, 29926-2650 (United States)

1999-01-01T23:59:59.000Z

203

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect (OSTI)

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

204

Absorption and photoluminescence of ternary nanostructured Ge-S-Ga(In)glassy semiconductor systems  

SciTech Connect (OSTI)

The photoluminescence and luminescence excitation spectra and the edge and IR absorption of Ge-S-Ga(In) glassy semiconductor systems are studied. The observed shifts of the optical-absorption edge, photoluminescence spectra (a decrease in their full width at half-maximum), and luminescence excitation spectra to lower energies upon the introduction of Ga or In into Ge-S binary systems are due to the fact that Ga or In tend to interact with sulfur, rather than with germanium. As the content of Ga(In) in the system increases, the intensity of the absorption band associated with vibrations of the Ge-S bond decreases.

Babaev, A. A., E-mail: babaev-arif@mail.ru [Russian Academy of Sciences, Amirkhanov Institute of Physics, Dagestan Scientific Center (Russian Federation); Kudoyarova, V. Kh. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2013-07-15T23:59:59.000Z

205

Low-temperature recrystallization of Ge nanolayers on ZnSe  

SciTech Connect (OSTI)

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru; Fedosenko, E. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2007-05-15T23:59:59.000Z

206

Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser  

E-Print Network [OSTI]

We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.

Nam, Donguk; Cheng, Szu-Lin; Roy, Arunanshu; Huang, Kevin Chih-Yao; Brongersma, Mark; Nishi, Yoshio; Saraswat, Krishna

2012-01-01T23:59:59.000Z

207

Bottomonium and Drell-Yan production in p-A collisions at 450 GeV  

E-Print Network [OSTI]

The NA50 Collaboration has measured heavy-quarkonium production in p-A collisions at 450 GeV incident energy (sqrt(s) = 29.1 GeV). We report here results on the production of the Upsilon states and of high-mass Drell-Yan muon pairs (m > 6 GeV). The cross-section at midrapidity and the A-dependence of the measured yields are determined and compared with the results of other fixed-target experiments and with the available theoretical estimates. Finally, we also address some issues concerning the transverse momentum distributions of the measured dimuons.

NA50 Collaboration

2006-03-23T23:59:59.000Z

208

Bottomonium and Drell-Yan production in p-A collisions at 450 GeV  

E-Print Network [OSTI]

The NA50 Collaboration has measured heavy-quarkonium production in p-A collisions at 450 GeV incident energy (sqrt(s) = 29.1 GeV). We report here results on the production of the Upsilon states and of high-mass Drell-Yan muon pairs (m > 6 GeV). The cross-section at midrapidity and the A-dependence of the measured yields are determined and compared with the results of other fixed-target experiments and with the available theoretical estimates. Finally, we also address some issues concerning the transverse momentum distributions of the measured dimuons.

Alessandro, B; Arnaldi, R; Atayan, M; Beol, S; Boldea, V; Bordalo, P; Borges, G; Castor, J; Chaurand, B; Cheynis, B; Chiavassa, E; Cical, C; Comets, M P; Constantinescu, S; Cortese, P; De Falco, A; De Marco, N; Dellacasa, G; Devaux, A; Dita, S; Fargeix, J; Force, P; Gallio, M; Gerschel, C; Giubellino, P; Golubeva, M B; Grigorian, A A; Grossiord, J Y; Guber, F F; Guichard, A; Gulkanian, H R; Idzik, M; Jouan, D; Karavicheva, T L; Kluberg, L; Kurepin, A B; Le Bornec, Y; Loureno, C; MacCormick, M; Marzari-Chiesa, A; Masera, M; Masoni, A; Monteno, M; Musso, A; Petiau, P; Piccotti, A; Pizzi, J R; Prino, F; Puddu, G; Quintans, C; Ramello, L; Ramos, S; Riccati, L; Santos, H; Saturnini, P; Scomparin, E; Serci, S; Shahoyan, R; Sitta, M; Sonderegger, P; Tarrago, X; Topilskaya, N S; Usai, G L; Vercellin, E; Willis, N

2006-01-01T23:59:59.000Z

209

Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers  

E-Print Network [OSTI]

The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.

Baldassarre, Leonetta; Samarelli, Antonio; Gallacher, Kevin; Paul, Douglas J; Frigerio, Jacopo; Isella, Giovanni; Sakat, Emilie; Finazzi, Marco; Biagioni, Paolo; Ortolani, Michele

2015-01-01T23:59:59.000Z

210

Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice  

SciTech Connect (OSTI)

This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

Ziouche, K., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D. [IEMN, Institute of Electronics, Microelectronics and Nanotechnology, CNRS and Lille 1 University, F-59652 Villeneuve d'Ascq (France); Savelli, G.; Hauser, D.; Michon, P.-M. [CEA, LITEN, Thermoelectricity Laboratory, F-38054 Grenoble (France)

2014-07-28T23:59:59.000Z

211

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network [OSTI]

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

212

Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes  

E-Print Network [OSTI]

We report what we believe to be the first demonstration of direct bandgap electroluminescence (EL) from Ge/Si heterojunction light-emitting diodes (LEDs) at room temperature. In-plane biaxial tensile strain is used to ...

Sun, Xiaochen

213

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network [OSTI]

Lasers on Si are crucial components of monolithic electronicphotonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

214

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...

Sun, Xiaochen

215

Black GE based on crystalline/amorphous core/shell nanoneedle arrays  

DOE Patents [OSTI]

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

2014-03-04T23:59:59.000Z

216

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

E-Print Network [OSTI]

Li, A. P. et al. Magnetism in Mn x Ge 1-x semiconductorsElectronic Structure and Magnetism for Mn in Amorphous Sistructure that determines magnetism. Figure 3 shows XAS data

Zeng, Li

2010-01-01T23:59:59.000Z

217

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

218

New Global Oil & Gas Hub in Oklahoma City | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window)...

219

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network [OSTI]

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this old semiconductor material used for the first transistor more than ...

Jifeng, Liu

220

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Single crystal epitaxial Ge{sub 1?x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1?x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1?x}Sn{sub x} alloys versus the composition of Sn have been determined.

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Wielunski, Leszek [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

2013-07-22T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Beam On Target CEBAF Accelerator Achieves 12 GeV Commissioning Milestone The accelerator crew on hand The accelerator crew on hand for the beam-on-target achievement included...

222

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network [OSTI]

We report a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8 GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction ...

Conrad, Janet

223

Pushing the Performance Limits of SiGe HBTTechnology Marwan Khatera  

E-Print Network [OSTI]

noise, device matching,and power performance.The performance evolution ofSiGe HBT technologyin recent. ECS Transactions, 3 (7) 341-353 (2006) 10.1149/1.2355832, copyright The Electrochemical Society 341

Rieh, Jae-Sung

224

A market analysis for high efficiency multi-junction solar cells grown on SiGe  

E-Print Network [OSTI]

Applications, markets and a cost model are presented for III-V multi-junction solar cells built on compositionally graded SiGe buffer layers currently being developed by professors Steven Ringell of Ohio State University ...

Judkins, Zachara Steele

2007-01-01T23:59:59.000Z

225

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

226

Strained Silicon on Silicon by Wafer Bonding and Layer Transfer from Relaxed SiGe Buffer  

E-Print Network [OSTI]

We report the creation of strained silicon on silicon (SSOS) substrate technology. The method uses a relaxed SiGe buffer as a template for inducing tensile strain in a Si layer, which is then bonded to another Si handle ...

Isaacson, David M.

227

One-step aluminium-assisted crystallization of Ge epitaxy on Si by magnetron sputtering  

SciTech Connect (OSTI)

In this work, one-step aluminium-assisted crystallization of Ge on Si is achieved via magnetron sputtering by applying an in-situ low temperature (50?C to 150?C) heat treatment in between Al and Ge depositions. The effect of heat treatment on film properties and the growth mechanism of Ge epitaxy on Si are studied via X-ray diffraction, Raman and transmission electron microscopy analyses. Compared with the conventional two-step process, the one-step aluminium-assisted crystallization requires much lower thermal budget and results in pure Ge epitaxial layer, which may be suitable for use as a virtual substrate for the fabrication of III-V solar cells.

Liu, Ziheng, E-mail: ziheng.liu@unsw.edu.au; Hao, Xiaojing; Ho-Baillie, Anita; Green, Martin A. [School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052 (Australia)

2014-02-03T23:59:59.000Z

228

Optical gain and lasing from band-engineered Ge-on-Si at room temperature  

E-Print Network [OSTI]

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale ...

Liu, Jifeng

229

Design of a short electro-optic modulator based on SiGe HBT structure  

E-Print Network [OSTI]

­68980C­10 (2008). 3. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu­17113 (2007). 7. S. Deng, Z. R. Huang, and J. F. McDonald, "Design of high efficiency multi-GHz SiGe HBT.-S. Rieh, D. Greenberg, A. Stricker, and G. Freeman, "Scaling of SiGe heterojunction bipolar transistors

Huang, Zhaoran "Rena"

230

Accelerating into the Future Zero to 1GeV in a Few Centimeters  

ScienceCinema (OSTI)

July 8, 2008 Berkeley Lab lecture: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.

LBNL

2009-09-01T23:59:59.000Z

231

A compact layout for a 50 GeV proton radiography facility  

SciTech Connect (OSTI)

We describe a new compact layout for a 50 GeV proton radiography facility. The more compact design utilizes two-point extraction from the main ring to drive an optimal 8 view imaging system. The lattice design of both the main ring, and of the corresponding 8.5 GeV booster ring is described. The rings have very good longitudinal stability, which is of interest for other applications of high current proton machines in this energy range.

Neri, F. (Filippo); Mottershead, C. T.; Blind, B. (Barbara); Jason, A. J. (Andrew J.); Walstrom, P. L. (Peter L.); Schulze, M. E. (Martin E.); Rybarcyk, L. J. (Lawrence J.); Wang, T. F. (Tai-Sen F.); Thiessen, H. A.; Colestock, P. L. (Patrick L.),; Prichard, B. (Ben)

2003-01-01T23:59:59.000Z

232

Nanostructured ion beam-modified Ge films for high capacity Li ion battery anodes  

SciTech Connect (OSTI)

Nanostructured ion beam-modified Ge electrodes fabricated directly on Ni current collector substrates were found to exhibit excellent specific capacities during electrochemical cycling in half-cell configuration with Li metal for a wide range of cycling rates. Structural characterization revealed that the nanostructured electrodes lose porosity during cycling but maintain excellent electrical contact with the metallic current collector substrate. These results suggest that nanostructured Ge electrodes have great promise for use as high performance Li ion battery anodes.

Rudawski, N. G.; Darby, B. L.; Yates, B. R.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physics and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia); Volinsky, A. A. [Department of Mechanical Engineering, University of South Florida, Tampa Florida 33620 (United States)

2012-02-20T23:59:59.000Z

233

Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3  

SciTech Connect (OSTI)

The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ? x ? 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ?C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (5:4) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (5:3) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102?){sub m} || [101?0](12?11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu K? diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200?C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101?0] (12?11){s

Cao, Qing

2012-07-26T23:59:59.000Z

234

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect (OSTI)

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

235

Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)  

SciTech Connect (OSTI)

We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

2011-01-05T23:59:59.000Z

236

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

SciTech Connect (OSTI)

Transition metals such as Mn generally have large local moments in covalent semiconductors due to their partially filled d shells. However, Mn magnetization in group-IV semiconductors is more complicated than often recognized. Here we report a striking crossover from a quenched Mn moment (<0.1 {mu}{sub B}) in amorphous Si (a-Si) to a large distinct local Mn moment ({ge}3{mu}{sub B}) in amorphous Ge (a-Ge) over a wide range of Mn concentrations (0.005-0.20). Corresponding differences are observed in d-shell electronic structure and the sign of the Hall effect. Density-functional-theory calculations show distinct local structures, consistent with different atomic density measured for a-Si and a-Ge, respectively, and the Mn coordination number N{sub c} is found to be the key factor. Despite the amorphous structure, Mn in a-Si is in a relatively well-defined high coordination interstitial type site with broadened d bands, low moment, and electron (n-type) carriers, while Mn in a-Ge is in a low coordination substitutional type site with large local moment and holes (p-type) carriers. Moreover, the correlation between N{sub c} and the magnitude of the local moment is essentially independent of the matrix; the local Mn moments approach zero when N{sub c} > 7 for both a-Si and a-Ge.

Zeng, Li; Cao, J. X.; Helgren, E.; Karel, J.; Arenholz, E.; Ouyang, Lu; Smith, David J.; Wu, R. Q.; Hellman, F.

2010-06-01T23:59:59.000Z

237

Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well  

SciTech Connect (OSTI)

We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1?x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1?x}Sn{sub x} and relaxed Si{sub 1?y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrdinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5??10{sup 4}?cm{sup ?1}) and the shift of the direct transition under large Stark effect at 3?V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

Yahyaoui, N., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr; Sfina, N.; Said, M., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr [Laboratoire de la Matire Condense et des Nanosciences (LMCN), Dpartement de Physique, Facult des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia); Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UMR CNRS 7325, Aix-Marseille Universit, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Bournel, A. [Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Universit Paris-Sud, Bt. 220, 91405 Orsay cedex (France)

2014-01-21T23:59:59.000Z

238

Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications  

E-Print Network [OSTI]

for layer exfoliation applications Arthur J. Piteraa and E. A. Fitzgerald Department of Materials Science of these result in subsurface crack propagation leading to surface blistering and eventual exfoliation of a H the exfoliation kinetics of relaxed Ge/Si1-xGex/Si virtual substrates by gettering hydrogen and providing

239

K*0 production in Cu+Cu and Au+Au collisions at \\sqrt{s_NN} = 62.4 GeV and 200 GeV  

E-Print Network [OSTI]

We report on K*0 production at mid-rapidity in Au+Au and Cu+Cu collisions at \\sqrt{s_{NN}} = 62.4 and 200 GeV collected by the Solenoid Tracker at RHIC (STAR) detector. The K*0 is reconstructed via the hadronic decays K*0 \\to K+ pi- and \\bar{K*0} \\to K-pi+. Transverse momentum, pT, spectra are measured over a range of pT extending from 0.2 GeV/c to 5 GeV/c. The center of mass energy and system size dependence of the rapidity density, dN/dy, and the average transverse momentum, , are presented. The measured N(K*0)/N(K) and N(\\phi)/N(K*0) ratios favor the dominance of re-scattering of decay daughters of K*0 over the hadronic regeneration for the K*0 production. In the intermediate pT region (2.0 < pT < 4.0 GeV/c), the elliptic flow parameter, v2, and the nuclear modification factor, RCP, agree with the expectations from the quark coalescence model of particle production.

M. M. Aggarwal; Z. Ahammed; A. V. Alakhverdyants; I. Alekseev; J. Alford; B. D. Anderson; Daniel Anson; D. Arkhipkin; G. S. Averichev; J. Balewski; L. S. Barnby; S. Baumgart; D. R. Beavis; R. Bellwied; M. J. Betancourt; R. R. Betts; A. Bhasin; A. K. Bhati; H. Bichsel; J. Bielcik; J. Bielcikova; B. Biritz; L. C. Bland; B. E. Bonner; W. Borowski; J. Bouchet; E. Braidot; A. V. Brandin; A. Bridgeman; E. Bruna; S. Bueltmann; I. Bunzarov; T. P. Burton; X. Z. Cai; H. Caines; M. Calderon; O. Catu; D. Cebra; R. Cendejas; M. C. Cervantes; Z. Chajecki; P. chaloupka; S. Chattopadhyay; H. F. Chen; J. H. Chen; J. Y. Chen; J. Cheng; M. Cherney; A. Chikanian; K. E. Choi; W. Christie; P. Chung; R. F. Clarke; M. J. M. Codrington; R. Corliss; J. G. Cramer; H. J. Crawford; D. Das; S. Dash; A. Davila Leyva; L. C. De Silva; R. R. Debbe; T. G. Dedovich; A. A. Derevschikov; R. Derradi de Souza; L. Didenko; P. Djawotho; S. M. Dogra; X. Dong; J. L. Drachenberg; J. E. Draper; J. C. Dunlop; M. R. Dutta Mazumdar; L. G. Efimov; E. Elhalhuli; M. Elnimr; J. Engelage; G. Eppley; B. Erazmus; M. Estienne; L. Eun; O. Evdokimov; P. Fachini; R. Fatemi; J. Fedorisin; R. G. Fersch; P. Filip; E. Finch; V. Fine; Y. Fisyak; C. A. Gagliardi; D. R. Gangadharan; M. S. Ganti; E. J. Garcia-Solis; A. Geromitsos; F. Geurts; V. Ghazikhanian; P. Ghosh; Y. N. Gorbunov; A. Gordon; O. Grebenyuk; D. Grosnick; S. M. Guertin; A. Gupta; W. Guryn; B. Haag; A. Hamed; L-X. Han; J. W. Harris; J. P. Hays-Wehle; M. Heinz; S. Heppelmann; A. Hirsch; E. Hjort; A. M. Hoffman; G. W. Hoffmann; D. J. Hofman; B. Huang; H. Z. Huang; T. J. Humanic; L. Huo; G. Igo; P. Jacobs; W. W. Jacobs; C. Jena; F. Jin; C. L. Jones; P. G. Jones; J. Joseph; E. G. Judd; S. Kabana; K. Kajimoto; K. Kang; J. Kapitan; K. Kauder; D. Keane; A. Kechechyan; D. Kettler; D. P. Kikola; J. Kiryluk; A. Kisiel; V. Kizka; S. R. Klein; A. G. Knospe; A. Kocoloski; D. D. Koetke; T. Kollegger; J. Konzer; I. Koralt; L. Koroleva; W. Korsch; L. Kotchenda; V. Kouchpil; P. Kravtsov; K. Krueger; M. Krus; L. Kumar; P. Kurnadi; M. A. C. Lamont; J. M. Landgraf; S. LaPointe; J. Lauret; A. Lebedev; R. Lednicky; C-H. Lee; J. H. Lee; W. Leight; M. J. LeVine; C. Li; L. Li; N. Li; W. Li; X. Li; X. Li; Y. Li; Z. M. Li; G. Lin; S. J. Lindenbaum; M. A. Lisa; F. Liu; H. Liu; J. Liu; T. Ljubicic; W. J. Llope; R. S. Longacre; W. A. Love; Y. Lu; E. V. Lukashov; X. Luo; G. L. Ma; Y. G. Ma; D. P. Mahapatra; R. Majka; O. I. Mall; L. K. Mangotra; R. Manweiler; S. Margetis; C. Markert; H. Masui; H. S. Matis; Yu. A. Matulenko; D. McDonald; T. S. McShane; A. Meschanin; R. Milner; N. G. Minaev; S. Mioduszewski; A. Mischke; M. K. Mitrovski; B. Mohanty; M. M. Mondal; B. Morozov; D. A. Morozov; M. G. Munhoz; B. K. Nandi; C. Nattrass; T. K. Nayak; J. M. Nelson; P. K. Netrakanti; M. J. Ng; L. V. Nogach; S. B. Nurushev; G. Odyniec; A. Ogawa; V. Okorokov; E. W. Oldag; D. Olson; M. Pachr; B. S. Page; S. K. Pal; Y. Pandit; Y. Panebratsev; T. Pawlak; T. Peitzmann; C. Perkins; W. Peryt; S. C. Phatak; P. Pile; M. Planinic; M. A. Ploskon; J. Pluta; D. Plyku; N. Poljak; A. M. Poskanzer; B. V. K. S. Potukuchi; C. B. Powell; D. Prindle; C. Pruneau; N. K. Pruthi; P. R. Pujahari; J. Putschke; H. Qiu; R. Raniwala; S. Raniwala; R. L. Ray; R. Redwine; R. Reed; H. G. Ritter; J. B. Roberts; O. V. Rogachevskiy; J. L. Romero; A. Rose; C. Roy; L. Ruan; R. Sahoo; S. Sakai; I. Sakrejda; T. Sakuma; S. Salur; J. Sandweiss; E. Sangaline; J. Schambach; R. P. Scharenberg; N. Schmitz; T. R. Schuster; J. Seele; J. Seger; I. Selyuzhenkov; P. Seyboth; E. Shahaliev; M. Shao; M. Sharma; S. S. Shi; E. P. Sichtermann; F. Simon; R. N. Singaraju; M. J. Skoby; N. Smirnov; P. Sorensen; J. Sowinski; H. M. Spinka; B. Srivastava; T. D. S. Stanislaus; D. Staszak; J. R. Stevens; R. Stock; M. Strikhanov; B. Stringfellow; A. A. P. Suaide; M. C. Suarez; N. L. Subba; M. Sumbera; X. M. Sun; Y. Sun; Z. Sun; B. Surrow; D. N. Svirida; T. J. M. Symons; A. Szanto de Toledo; J. Takahashi; A. H. Tang; Z. Tang; L. H. Tarini; T. Tarnowsky; D. Thein; J. H. Thomas; J. Tian; A. R. Timmins; S. Timoshenko; D. Tlusty; M. Tokarev; T. A. Trainor; V. N. Tram; S. Trentalange; R. E. Tribble; O. D. Tsai; J. Ulery; T. Ullrich; D. G. Underwood; G. Van Buren; M. van Leeuwen; G. van Nieuwenhuizen; J. A. Vanfossen, Jr.; R. Varma; G. M. S. Vasconcelos; A. N. Vasiliev; F. Videbaek; Y. P. Viyogi; S. Vokal; S. A. Voloshin; M. Wada; M. Walker; F. Wang; G. Wang; H. Wang; J. S. Wang; Q. Wang; X. L. Wang; Y. Wang; G. Webb; J. C. Webb; G. D. Westfall; C. Whitten Jr.; H. Wieman; S. W. Wissink; R. Witt; Y. F. Wu; W. Xie; H. Xu; N. Xu; Q. H. Xu; W. Xu; Y. Xu; Z. Xu; L. Xue; Y. Yang; P. Yepes; K. Yip; I-K. Yoo; Q. Yue; M. Zawisza; H. Zbroszczyk; W. Zhan; J. B. Zhang; S. Zhang; W. M. Zhang; X. P. Zhang; Y. Zhang; Z. P. Zhang; J. Zhao; C. Zhong; J. Zhou; W. Zhou; X. Zhu; Y. H. Zhu; R. Zoulkarneev

2010-06-10T23:59:59.000Z

240

Single-Neutron Excitations in Neutron-Rich 83Ge and 85Se  

SciTech Connect (OSTI)

The 2H(82Ge,p)83Ge and 2H(84Se,p)85Se reactions were studied with radioactive beams of 82Ge and 84Se at beam energies of Ebeam = 330 and 380 MeV, respectively. Excitation energies, proton angular distributions, and asymptotic normalization coefficients have been determined for the lowest lying states of 83Ge and 85Se. Spectroscopic factors have also been extracted under normal assumptions of the bound-state potential properties in the DWBA analysis. However, the peripheral character of the measurements leads to large uncertainties in this extraction. Shell model calculations have been performed in the region above 78Ni, comparing the single-particle properties of the even-Z, N = 51 nuclei up to 91Zr and including 83Ge and 85Se. Direct-semidirect neutron capture calculations to 83Ge and 85Se have also been performed using the spectroscopic input from these (d,p) reaction measurements.

Thomas, Jeffrey S [ORNL; Arbanas, Goran [ORNL; Bardayan, Daniel W [ORNL; Blackmon, Jeff C [ORNL; Cizewski, Jolie [ORNL; Dean, David Jarvis [ORNL; Fitzgerald, Ryan [ORNL; Greife, Uwe [ORNL; Gross, Carl J [ORNL; Johnson, Micah [ORNL; Grzywacz-Jones, Kate L [ORNL; KOZUB, RAYMOND L [ORNL; Liang, J Felix [ORNL; Livesay, Jake [ORNL; Ma, Zhanwen [ORNL; Moazen, Brian H [ORNL; Nesaraja, Caroline D [ORNL; Shapira, Dan [ORNL; Smith, Michael Scott [ORNL; Visser, Dale William [ORNL

2007-01-01T23:59:59.000Z

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241

Electrical properties of diluted n- and p-Si{sub 1?x}Ge{sub x} at small x  

SciTech Connect (OSTI)

Hall effect and conductivity measurements are taken on Si{sub 1?x}Ge{sub x} of n- and p-type at x ? 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1?x}Ge{sub x} and p-Si{sub 1?x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1?x}Ge{sub x} are discussed.

Emtsev, V. V., E-mail: emtsev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation); Abrosimov, N. V. [Leibniz Institute for Crystal Growth (Germany); Kozlovskii, V. V. [St. Petersburg Polytechnical State University (Russian Federation); Oganesyan, G. A. [Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

2014-12-15T23:59:59.000Z

242

Quaternary Germanides Formed in Molten Aluminum: Tb2NiAl4Ge2 and Ce2NiAl6-xGe4-y (x 0.24, y 1.34)  

E-Print Network [OSTI]

Quaternary Germanides Formed in Molten Aluminum: Tb2NiAl4Ge2 and Ce2NiAl6-xGe4-y (x 0.24, y 1 gebildete quaternäre Germanide: Tb2NiAl4Ge2 und Ce2NiAl6-xGe4-y (x 0.24, y 1.34) Inhaltsübersicht. Die ebenfalls die Introduction The use of metal fluxes in exploratory synthesis presents significant synthetic

Trikalitis, Pantelis N.

243

Measurement of the Crab Flux Above 60 GeV with the CELESTE Cherenkov Telescope  

E-Print Network [OSTI]

We have converted the former solar electrical plant THEMIS (French Pyrenees) into an atmospheric Cherenkov detector called CELESTE, which records gamma rays above 30 GeV (7E24 Hz). Here we present the first sub-100 GeV detection by a ground based telescope of a gamma ray source, the Crab nebula, in the energy region between satellite measurements and imaging atmospheric Cherenkov telescopes. At our analysis threshold energy of 60 +/- 20 GeV we measure a gamma ray rate of 6.1 +/- 0.8 per minute. Allowing for 30% systematic uncertainties and a 30% error on the energy scale yields an integral gamma ray flux of I(E>60 GeV) = 6.2^{+5.3}_{-2.3} E-6 photons m^-2 s^-1. The analysis methods used to obtain the gamma ray signal from the raw data are detailed. In addition, we determine the upper limit for pulsed emission to be <12% of the Crab flux at the 99% confidence level, in the same energy range. Our result indicates that if the power law observed by EGRET is attenuated by a cutoff of form e^{-E/E_0} then E_0 < 26 GeV. This is the lowest energy probed by a Cherenkov detector and leaves only a narrow range unexplored beyond the energy range studied by EGRET.

M. De Naurois; J. Holder; R. Bazer-Bachi; H. Bergeret; P. Bruel; A. Cordier; G. Debiais; J-P. Dezalay; D. Dumora; E. Durand; P. Eschstruth; P. Espigat; B. Fabre; P. Fleury; N. Herault; M. Hrabovsky; S. Incerti; R. Le Gallou; F. Munz; A. Musquere; J-F. Olive; E. Pare; J. Quebert; R. C. Rannot; T. Reposeur; L. Rob; P. Roy; T. Sako; P. Schovanek; D. A. Smith; P. Snabre; A. Volte

2001-12-05T23:59:59.000Z

244

Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering  

SciTech Connect (OSTI)

The XRMS experiment on the Gd{sub 5}Ge{sub 4} system has shown that, below the Neel temperature, T{sub N} = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd{sub 5}Ge{sub 4}. A spin-reorientation transition is a possibility in Gd{sub 5}Ge{sub 4}, which is similar to the Tb{sub 5}Ge{sub 4} case. Tb{sub 5}Ge{sub 4} possesses the same Sm{sub 5}Ge{sub 4}-type crystallographic structure and the same magnetic space group as Gd{sub 5}Ge{sub 4} does. The difference in magnetic structure is that Tb{sub 5}Ge{sub 4} has a canted one but Gd{sub 5}Ge{sub 4} has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb{sub 5}Ge{sub 4}. The spin-reorientation transition in both Gd{sub 5}Ge{sub 4} and Tb{sub 5}Ge{sub 4} may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.

Lizhi Tan

2008-08-18T23:59:59.000Z

245

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network [OSTI]

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells trapping, for the nc- Si:H absorber in the Si-based thin film solar cells. Furthermore, nc-Si:H is usually bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical

Deng, Xunming

246

Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams  

SciTech Connect (OSTI)

Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A. [INFN Laboratori Nazionali di Legnaro, Viale Universit 2, 35020 Legnaro (PD) and Dipartimento di Fisica e Astronomia, Universit di Padova, Via Marzolo 8, 35131 Padova (Italy)] [INFN Laboratori Nazionali di Legnaro, Viale Universit 2, 35020 Legnaro (PD) and Dipartimento di Fisica e Astronomia, Universit di Padova, Via Marzolo 8, 35131 Padova (Italy); Dalla Palma, M.; Della Mea, G. [INFN Laboratori Nazionali di Legnaro, Viale Universit 2, 35020 Legnaro (PD) and Dipartimento di Ingegneria Industriale, Universit di Trento, Via Mesiano 77, 38050 Trento (Italy)] [INFN Laboratori Nazionali di Legnaro, Viale Universit 2, 35020 Legnaro (PD) and Dipartimento di Ingegneria Industriale, Universit di Trento, Via Mesiano 77, 38050 Trento (Italy); Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V. [INFN Sezione di Ferrara, Dipartimento di Fisica, Universit di Ferrara Via Saragat 1, 44100 Ferrara (Italy)] [INFN Sezione di Ferrara, Dipartimento di Fisica, Universit di Ferrara Via Saragat 1, 44100 Ferrara (Italy); Lietti, D.; Berra, A.; Guffanti, G.; Prest, M. [Dipartimento di Scienza e Alta Tecnologia, Universit dell'Insubria, Via Valleggio 11, 22100 Como and INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan (Italy)] [Dipartimento di Scienza e Alta Tecnologia, Universit dell'Insubria, Via Valleggio 11, 22100 Como and INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan (Italy); Vallazza, E. [INFN Sezione di Trieste, Via Valerio 2, 34127 Trieste (Italy)] [INFN Sezione di Trieste, Via Valerio 2, 34127 Trieste (Italy)

2013-10-21T23:59:59.000Z

247

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network [OSTI]

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

248

Options for an 11 GeV RF Beam Separator for the Jefferson Lab CEBAF Upgrade  

SciTech Connect (OSTI)

The CEBAF accelerator at Jefferson Lab has had, since first demonstration in 1996, the ability to deliver a 5-pass electron beam to experimental halls (A, B, and C) simultaneously. This capability was provided by a set of three, room temperature 499 MHz rf separators in the 5th pass beamline. The separator was two-rod, TEM mode type resonator, which has a high shunt impedance. The maximum rf power to deflect the 6 GeV beams was about 3.4kW. The 12 GeV baseline design does not preserve the capability of separating the 5th pass, 11 GeV beam for the 3 existing halls. Several options for restoring this capability, including extension of the present room temperature system or a new superconducting design in combination with magnetic systems, are under investigation and are presented.

Jean Delayen, Michael Spata, Haipeng Wang

2009-05-01T23:59:59.000Z

249

5-10 GeV Neutrinos from Gamma-Ray Burst Fireballs  

E-Print Network [OSTI]

A gamma-ray burst fireball is likely to contain an admixture of neutrons, in addition to protons, in essentially all progenitor scenarios. Inelastic collisions between differentially streaming protons and neutrons in the fireball produce muon neutrinos (antineutrinos) of ~ 10 GeV as well as electron neutrinos (antineutrinos) of ~ 5 GeV, which could produce ~ 7 events/year in kilometer cube detectors, if the neutron abundance is comparable to that of protons. Photons of ~ 10 GeV from pi-zero decay and ~ 100 MeV electron antineutrinos from neutron decay are also produced, but will be difficult to detect. Photons with energies < 1 MeV from shocks following neutron decay produce a characteristic signal which may be distinguishable from the proton-related MeV photons.

John N. Bahcall; Peter Meszaros

2000-06-23T23:59:59.000Z

250

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Y. Maeda; N. Kawasaki; T. Masuda; H. Morii; D. Naito; Y. Nakajima; H. Nanjo; T. Nomura; N. Sasao; S. Seki; K. Shiomi; T. Sumida; Y. Tajima

2014-12-22T23:59:59.000Z

251

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Maeda, Y; Masuda, T; Morii, H; Naito, D; Nakajima, Y; Nanjo, H; Nomura, T; Sasao, N; Seki, S; Shiomi, K; Sumida, T; Tajima, Y

2014-01-01T23:59:59.000Z

252

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

253

Effects of orbital occupancies on the neutrinoless beta-beta matrix element of 76Ge  

E-Print Network [OSTI]

In this work we use the recently measured neutron occupancies in the 76Ge and 76Se nuclei as a guideline to define the neutron quasiparticle states in the 1p0f0g shell. We define the proton quasiparticles by inspecting the odd-mass nuclei adjacent to 76Ge and 76Se. We insert the resulting quasiparticles in a proton-neutron quasiparticle random-phase approximation (pnQRPA) calculation of the nuclear matrix element of the neutrinoless double beta (0-nu-beta-beta) decay of 76Ge. A realistic model space and effective microscopic two-nucleon interactions are used. We include the nucleon-nucleon short-range correlations and other relevant corrections at the nucleon level. It is found that the resulting 0-nu-beta-beta matrix element is smaller than in the previous pnQRPA calculations, and closer to the recently reported shell-model results.

J. Suhonen; O. Civitarese

2008-03-10T23:59:59.000Z

254

The JLAB 3D program at 12 GeV (TMDs + GPDs)  

SciTech Connect (OSTI)

The Jefferson Lab CEBAF accelerator is undergoing an upgrade that will increase the beam energy up to 12 GeV. The three experimental Halls operating in the 6-GeV era are upgrading their detectors to adapt their performances to the new available kinematics, and a new Hall (D) is being built. The investigation of the three-dimensional nucleon structure both in the coordinate and in the momentum space represents an essential part of the 12-GeV physics program, and several proposals aiming at the extraction of related observables have been already approved in Hall A, B and C. In this proceedings, the focus of the JLab 3D program will be described, and a selection of proposals will be discussed.

Pisano, Silvia [Lab. Naz. Frascati, Frascati, Italy

2015-01-01T23:59:59.000Z

255

Pd-vacancy complex in Ge: TDPAC and ab initio study  

SciTech Connect (OSTI)

Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different ?-? perturbed angular correlation (TDPAC) technique using the {sup 100}Pd(?{sup 100}Rh) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.

Abiona, Adurafimihan A.; Kemp, Williams; Timmers, Heiko [School of Physical, Environmental and Mathematical Sciences, The University of New South Wales, UNSW Canberra, PO Box 7916, Canberra BC 2610 (Australia)

2014-02-21T23:59:59.000Z

256

Structural and electronic properties of Si{sub 1?x}Ge{sub x} alloy nanowires  

SciTech Connect (OSTI)

We present first-principles density-functional calculations of Si{sub 1?x}Ge{sub x} alloy nanowires. We show that given the composition of the alloy, the structural properties of the nanowires can be predicted with great accuracy by means of Vegard's law, linearly interpolating the values of a pure Si and a pure Ge nanowire of the same diameter. The same holds, to some extent, also for electronic properties such as the band-gap. We also assess to what extend the band-gap varies as a function of disorder, i.e., how it changes for different random realization of a given concentration. These results make possible to tailor the desired properties of SiGe alloy nanowires starting directly from the data relative to the pristine wires.

Iori, Federico [Dipartimento di Scienze e Metodi dell'Ingegneria, Centro Interdipartimentale Intermech and En and tech, Universit di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); European Theoretical Spectroscopy Facility (ETSF) and Institut de Cincia de Materials de Barcelona (ICMABCSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain); Ossicini, Stefano [Dipartimento di Scienze e Metodi dell'Ingegneria, Centro Interdipartimentale Intermech and En and tech, Universit di Modena e Reggio Emilia, via Amendola 2 Pad. Morselli, I-42122 Reggio Emilia (Italy); Centro S3, CNR-Istituto di Nanoscienze, Via Campi 213/A, 41125 Modena (Italy); Rurali, Riccardo, E-mail: rrurali@icmab.es [Institut de Cincia de Materials de Barcelona (ICMABCSIC), Campus de Bellaterra, 08193 Bellaterra, Barcelona (Spain)

2014-10-21T23:59:59.000Z

257

Polarization of Lambda0 and antiLambda0 inclusively produced by 610GeV/c Sigma- and 525GeV/c proton beams  

E-Print Network [OSTI]

We have measured the polarization of Lambda0 and antiLambda0 inclusively produced by 610GeV/c Sigma- and 525GeV/c proton beams in the experiment SELEX during the 1996/7 fixed target run at Fermilab. The polarization was measured as a function of the Lambda longitudinal momentum fraction xF and transverse momentum pt. For the Lambda0 produced by Sigma- the polarization is increasing with xF, from slightly negative at x_F~0 to about 15% at large xF; it shows a non-monotonic behavior as a function of pt. For the proton beam, the Lambda0 polarization is negative and decreasing as a function of xF and pt. The antiLambda0 polarization is compatible with 0 for both beam particles over the full kinematic range. The target dependence was examined but no statistically significant difference was found.

SELEX Collaboration; J. L. Sanchez-Lopez; K. D. Nelson; J. Engelfried

2007-06-25T23:59:59.000Z

258

Measurement of high-p/sub T/ correlations in 340-GeV/c pp and 280-GeV/c. pi. /sup -/p reactions  

SciTech Connect (OSTI)

We have measured correlations between single high-p/sub T/ (1.5 < p/sub T/ < 3.5 GeV/c) trigger particles on one side of the beam line and groups of particles entering a calorimeter on the opposite side of the beam line. The mean transverse momentum measured in the calorimeter is found to increase with the trigger-particle transverse momentum. The coplanarity of the events increases with trigger-particle transferse momentum. We have compared our data to the predictions of a phenomenological four-jet model. To fit our data we find that we must give large (0.9 GeV/c) mean transverse momenta to the constituents of the initial hadrons.

Oliver, W.P.; Limon, P.; Mantsch, P.

1983-03-01T23:59:59.000Z

259

Measurement of charged pions in 12C + 12C collisions at 1A GeV and 2A GeV with HADES  

E-Print Network [OSTI]

We present the results of a study of charged pion production in 12C + 12C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of pi+- mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular range measurement of the distribution of pi+- mesons for the 12C + 12C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed.

Agakichiev, G

2009-01-01T23:59:59.000Z

260

Measurement of charged pions in 12C + 12C collisions at 1A GeV and 2A GeV with HADES  

E-Print Network [OSTI]

We present the results of a study of charged pion production in 12C + 12C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of pi+- mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular range measurement of the distribution of pi+- mesons for the 12C + 12C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed.

The HADES Collaboration; G. Agakishiev; C. Agodi; A. Balanda; G. Bellia; D. Belver; A. Belyaev; J. Bielcik; A. Blanco; A. Bortolotti; J. L. Boyard; P. Braun-Munzinger; P. Cabanelas; S. Chernenko; T. Christ; R. Coniglione; M. Destefanis; J. Diaz; F. Dohrmann; I. Duran; A. Dybczak; T. Eberl; L. Fabbietti; O. Fateev; R. Ferreira-Marques; P. Finocchiaro; P. Fonte; J. Friese; I. Froehlich; T. Galatyuk; J. A. Garzon; R. Gernhaeuser; A. Gil; C. Gilardi; M. Golubeva; D. Gonzalez-Diaz; E. Grosse; F. Guber; M. Heilmann; T. Heinz; T. Hennino; R. Holzmann; A. Ierusalimov; I. Iori; A. Ivashkin; M. Jurkovic; B. Kaempfer; K. Kanaki; T. Karavicheva; D. Kirschner; I. Koenig; W. Koenig; B. W. Kolb; R. Kotte; A. Kozuch; A. Krasa; F. Krizek; R. Kruecken; W. Kuehn; A. Kugler; A. Kurepin; J. Lamas-Valverde; S. Lang; J. S. Lange; K. Lapidus; L. Lopes; M. Lorenz; L. Maier; C. Maiolino; A. Mangiarotti; J. Marin; J. Markert; V. Metag; B. Michalska; J. Michel; E. Moriniere; J. Mousa; M. Muench; C. Muentz; L. Naumann; R. Novotny; J. Otwinowski; Y. C. Pachmayer; M. Palka; Y. Parpottas; V. Pechenov; O. Pechenova; T. Perez Cavalcanti; P. Piattelli; J. Pietraszko; V. Pospisil; W. Przygoda; B. Ramstein; A. Reshetin; M. Roy-Stephan; A. Rustamov; A. Sadovsky; B. Sailer; P. Salabura; P. Sapienza; A. Schmah; C. Schroeder; E. Schwab; R. S. Simon; Yu. G. Sobolev; S. Spataro; B. Spruck; H. Stroebele; J. Stroth; C. Sturm; M. Sudol; A. Tarantola; K. Teilab; P. Tlusty; M. Traxler; R. Trebacz; H. Tsertos; V. Wagner; M. Weber; M. Wisniowski; T. Wojcik; J. Wuestenfeld; S. Yurevich; Y. Zanevsky; P. Zhou; P. Zumbruch

2009-05-18T23:59:59.000Z

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261

Photoemission Study of the Rare Earth Intermetallic Compounds: RNi2Ge2 (R=Eu, Gd)  

SciTech Connect (OSTI)

EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} are two members of the RT{sub 2}X{sub 2} (R = rare earth, T = transition metal and X = Si, Ge) family of intermetallic compounds, which has been studied since the early 1980s. These ternary rare-earth intermetallic compounds with the tetragonal ThCr{sub 2}Si{sub 2} structure are known for their wide variety of magnetic properties, Extensive studies of the RT{sub 2}X{sub 2} series can be found in Refs [ 1,2,3]. The magnetic properties of the rare-earth nickel germanides RNi{sub 2}Ge{sub 2} were recently studied in more detail [4]. The purpose of this dissertation is to investigate the electronic structure (both valence band and shallow core levels) of single crystals of EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} and to check the assumptions that the f electrons are non-interacting and, consequently, the rigid-band model for these crystals would work [11], using synchrotron radiation because, to the best of our knowledge, no photoemission measurements on those have been reported. Photoemission spectroscopy has been widely used to study the detailed electronic structure of metals and alloys, and especially angle-resolved photoemission spectroscopy (ARPES) has proven to be a powerful technique for investigating Fermi surfaces (FSs) of single-crystal compounds.

Jongik Park

2004-12-19T23:59:59.000Z

262

Changing the PEP-II Center-of-Mass Energy Down to 10 GeV and up to 11 GeV  

SciTech Connect (OSTI)

PEP-II, the SLAC, LBNL, LLNL B-Factory was designed and optimized to run at the Upsilon 4S resonance (10.580 GeV with an 8.973 GeV e- beam and a 3.119 GeV e+ beam). The interaction region (IR) used permanent magnet dipoles to bring the beams into a head-on collision. The first focusing element for both beams was also a permanent magnet. The IR geometry, masking, beam orbits and beam pipe apertures were designed for 4S running. Even though PEP-II was optimized for the 4S, we successfully changed the center-of-mass energy (E{sub cm}) down to the Upsilon 2S resonance and completed an E{sub cm} scan from the 4S resonance up to 11.2 GeV. The luminosity throughout most of these changes remained near 1 x 10{sup 34} cm{sup -2}s{sup -1}. The E{sub cm} was changed by moving the energy of the high-energy beam (HEB). The beam energy differed by more than 20% which produced significantly different running conditions for the RF system. The energy loss per turn changed 2.5 times over this range. We describe how the beam energy was changed and discuss some of the consequences for the beam orbit in the interaction region. We also describe some of the RF issues that arose and how we solved them as the high-current HEB energy changed.

Sullivan, M; Bertsche, K.; Novokhatski, A.; Seeman, J.; Wienands, U.; /SLAC

2009-05-20T23:59:59.000Z

263

Parameter studies of candidate lattices for the 1-2 GeV synchrotron radiation source  

SciTech Connect (OSTI)

This document discusses the implications of various collective phenomena on the required performance of candidate lattices for the LBL 1 to 2 GeV Synchrotron Radiation Source. The performance issues considered include bunch length, emittance growth, and beam lifetime. In addition, the possible use of the 1 to 2 GeV Synchrotron Radiation Source as a high-gain FEL is explored briefly. Generally, the differences between lattices are minor. It appears that the most significant feature distinguishing the various alternatives will be the beam lifetime.

Zisman, M.S.

1986-01-13T23:59:59.000Z

264

Pair correlations in nuclei involved in neutrinoless double beta decay: 76Ge and 76Se  

E-Print Network [OSTI]

Precision measurements were carried out to test the similarities between the ground states of 76Ge and 76Se. The extent to which these two nuclei can be characterized as consisting of correlated pairs of neutrons in a BCS-like ground state was studied. The pair removal (p,t) reaction was measured at the far forward angle of 3 degrees. The relative cross sections are consistent (at the 5% level) with the description of these nuclei in terms of a correlated pairing state outside the N=28 closed shells with no pairing vibrations. Data were also obtained for 74Ge and 78Se.

S. J. Freeman; J. P. Schiffer; A. C. C. Villari; J. A. Clark; C. Deibel; S. Gros; A. Heinz; D. Hirata; C. L. Jiang; B. P. Kay; A. Parikh; P. D. Parker; J. Qian; K. E. Rehm; X. D. Tang; V. Werner; C. Wrede

2007-03-23T23:59:59.000Z

265

Search for neutrinoless double-beta decay of Ge-76 with GERDA  

E-Print Network [OSTI]

GERDA, the GERmanium Detector Array experiment, is a new double beta-decay experiment which is currently under construction in the INFN National Gran Sasso Laboratory (LNGS), Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of GERDA is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments. The paper discusses motivation, physics reach, design and status of construction of GERDA, and presents some R&D results.

Karl-Tasso Knoepfle

2008-09-30T23:59:59.000Z

266

Page 320 Courses: Geology (GEOL) Sonoma State University 2010-2011 Catalog GeOl 303 AdVAnCed prinCipleS Of GeOlOGy (4)  

E-Print Network [OSTI]

Page 320 Courses: Geology (GEOL) Sonoma State University 2010-2011 Catalog GeOl 303 AdVAnCed prinCipleS Of GeOlOGy (4) Lecture, 3 hours; laboratory, 3 hours. Advanced treatment of the principles, meth- ods and tools of geology emphasizing the materials that constitute the earth and the processes that act or have

Ravikumar, B.

267

Low-temperature (180?C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization  

SciTech Connect (OSTI)

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180?C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10??m and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180?C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Numata, R.; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Fukata, N. [National Institute for Materials Science, Namiki, Tsukuba 305-0044 (Japan); Usami, N. [Materials, Physics and Energy Engineering, Nagoya University, Aichi 464-8603 (Japan)

2014-01-13T23:59:59.000Z

268

Large grain growth of Ge-rich Ge{sub 1?x}Sn{sub x} (x???0.02) on insulating surfaces using pulsed laser annealing in flowing water  

SciTech Connect (OSTI)

We investigate Sn incorporation effects on the growth characteristics of Ge-rich Ge{sub 1?x}Sn{sub x} (x?GeSn layers play a role in preventing ablation and aggregation of the layers during these PLA. Raman and electron backscatter diffraction measurements demonstrate achievement of large-grain (?800?nm?) growth of Ge{sub 0.98}Sn{sub 0.02} polycrystals by using PLA in water. These polycrystals also show a tensile-strain of ?0.68%. This result opens up the possibility for developing GeSn-based devices fabricated on flexible substrates as well as Si platforms.

Kurosawa, Masashi, E-mail: kurosawa@alice.xtal.nagoya-u.ac.jp [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Ikenoue, Hiroshi [Graduate School of Information Science and Electrical Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

2014-02-10T23:59:59.000Z

269

Neutral pion production in Au plus Au collisions at root s(NN)=200 GeV  

E-Print Network [OSTI]

The results of midrapidity (0 < y < 0.8) neutral pion spectra over an extended transverse momentum range (1 < p(T) < 12 GeV/c) in root s(NN) = 200 GeV Au + Au collisions, measured by the STAR experiment, are presented. The neutral pions...

Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Alakhverdyants, A. V.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bnzarov, I.; Bombara, M.; Bonner, B. E.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bruna, E.; Bueltmann, S.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; de la Barca Sanchez, M. Calderon; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; De Silva, L. C.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; De Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gaillard, L.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kauder, K.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Konzer, J.; Kopytine, M.; Koralt, I.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Krus, M.; Kuhn, C.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, N.; Li, Y.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Masui, H.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Ploskon, M. A.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakai, S.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Shi, X. -H; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Staszak, D.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; De Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; van Nieuwenhuizen, G.; Vanfossen, J. A., Jr.; Varma, R.; Vasconcelos, G. M. S.; Vasiliev, A. N.; Videbaek, F.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.

2009-01-01T23:59:59.000Z

270

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes-Based Electrical  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes/Ge-based avalanche photodiode (APD) for the direct genera- tion of ultra-wideband (UWB) frequency comb lines--Avalanche photodiodes (APD), impulse radio (IR), ultra-wideband (UWB). I. INTRODUCTION THERE has been a great scarcity

Bowers, John

271

SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)  

E-Print Network [OSTI]

­8 or Ge condensation during SiGe oxidation.9 In these approaches, the relaxed SGOI layer serves as a ten chemical mechanical polishing step to elimi- nate the surface crosshatch roughness induced by the com a hydrophilic surface preparation treatment, the implanted structure was wafer bonded to an oxidized Si handle

272

First-principle studies of CaX (X=Si,Ge,Sn,Pb) intermetallic compounds Zhiwen Yang a  

E-Print Network [OSTI]

First-principle studies of Ca­X (X=Si,Ge,Sn,Pb) intermetallic compounds Zhiwen Yang a , Dongmin Shi structures, and densities of states of 20 intermetallic compounds in the Ca­X (X=Si, Ge, Sn, Pb) systems have indicated that with increasing atomic weight of X, the bulk modulus of Ca­X intermetallic compounds

Melnik, Roderick

273

The interfacial reaction of Ni on (100) Si???xGex (x=0, 0.25) and (111) Ge  

E-Print Network [OSTI]

The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400C has been investigated. A uniform epitaxial NiSi film was obtained at 400C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

Jin, Lijuan

274

On the Design and Implementation of Transmission Lines in Commercial SiGe HBT BiCMOS Processes  

E-Print Network [OSTI]

On the Design and Implementation of Transmission Lines in Commercial SiGe HBT BiCMOS Processes Matt the feasibility of implement- ing transmission lines in a commercially-available SiGe HBT BiCMOS technology. Thin film microstrip transmission lines using the top and bottom metalization layers (with a 3.24 ¡ m

Papapolymerou, Ioannis "John"

275

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions  

E-Print Network [OSTI]

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind

276

Effects of carbon on phosphorus diffusion in SiGe:C and the implications on phosphorus diffusion mechanisms  

SciTech Connect (OSTI)

The use of carbon (C) in SiGe base layers is an important approach to control the base layer dopant phosphorus (P) diffusion and thus enhance PNP heterojunction bipolar transistor (HBT) performance. This work quantitatively investigated the carbon impacts on P diffusion in Si{sub 0.82}Ge{sub 0.18}:C and Si:C under rapid thermal anneal conditions. The carbon molar fraction is up to 0.32%. The results showed that the carbon retardation effect on P diffusion is less effective for Si{sub 0.82}Ge{sub 0.18}:C than for Si:C. In Si{sub 0.82}Ge{sub 0.18}:C, there is an optimum carbon content at around 0.05% to 0.1%, beyond which more carbon incorporation does not retard P diffusion any more. This behavior is different from the P diffusion behavior in Si:C and the B in Si:C and low Ge SiGe:C, which can be explained by the decreased interstitial-mediated diffusion fraction f{sub I}{sup P,?SiGe} to 95% as Ge content increases to 18%. Empirical models were established to calculate the time-averaged point defect concentrations and effective diffusivities as a function of carbon and was shown to agree with previous studies on boron, phosphorus, arsenic and antimony diffusion with carbon.

Lin, Yiheng; Xia, Guangrui [Department of Materials Engineering, The University of British Columbia, 309-6350 Stores Rd, Vancouver, British Columbia V6T 1Z4 (Canada); Yasuda, Hiroshi; Wise, Rick [Texas Instruments, 13121 TI Blvd., Dallas, Texas 75243 (United States); Schiekofer, Manfred; Benna, Bernhard [Texas Instruments Deutschland GmbH, Haggertystrasse 1, 85356 Freising (Germany)

2014-10-14T23:59:59.000Z

277

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

278

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n)  

E-Print Network [OSTI]

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n.Introduction Green polynomials Q~~(q) of GLn(Fq), where ~, ~ are partitions of n, were fi* *rst introduced by J.A.Green [G] in 1955 in a combinatorial framework of symmetric f* *unc- tions

Shoj, Toshiaki

279

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n)  

E-Print Network [OSTI]

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n) TOSHIAKI SHOJI Department of Mathematics Science University of Tokyo Noda, Chiba 278­8510, Japan 0. Introduction Green polynomials Q µ # (q) of GL n (F q ), where #, µ are partitions of n, were first introduced by J.A.Green [G] in 1955

Shoj, Toshiaki

280

High bandwidth Ge p-i-n photodetector integrated on Si  

SciTech Connect (OSTI)

The authors present a germanium on silicon p-i-n photodiode for vertical light incidence. For a Ge p-i-n photodetector with a radius of 5 {mu}m a 3 dB bandwidth of 25 GHz is measured at an incident wavelength of 1.55 {mu}m and zero external bias. For a modest reverse bias of 2 V, the 3 dB bandwidth increases to 39 GHz. The monolithically integrated devices are grown on Si with solid source molecular beam epitaxy. The complete detector structure consisting of a highly p-doped Ge buried layer, an intrinsic absorption region, and a highly n-doped top contact layer of Ge/Si is grown in one continuous epitaxial run. A low growth temperature sequence was needed to obtain abrupt doping transitions between the highly doped regions surrounding the intrinsic layer. A theoretical consideration of the 3 dB bandwidth of the Ge detector was used to optimize the layer structure. For a photodiode with 5 {mu}m mesa radius the maximum theoretical 3 dB frequency is 62 GHz with an intrinsic region thickness of 307 nm.

Oehme, M.; Werner, J.; Kasper, E.; Jutzi, M.; Berroth, M. [Institut fuer Halbleitertechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Institut fuer Elektrische und Optische Nachrichtentechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

2006-08-14T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1  

E-Print Network [OSTI]

the temperature of the device below ambient. For a material to be a good thermoelectric cooler, it must have]. SiGe is a good thermoelectric material especially for high temperature applications [11 element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively

282

\\Xi 0 and \\Xi Polarization Measurements at 800 GeV/c.  

E-Print Network [OSTI]

compared to a result obtained at 400 GeV/c production energy and at twice our targeting angle of hyperon momentum (p), production angle (`), beam energy (p beam ) and target material [3,4]. Results, Texas 77005 10 Universidade de S~ao Paulo, S~ao Paulo, Brazil 05315­970 11 The Department of Physics

Fermilab

283

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells  

E-Print Network [OSTI]

Performance predictions for monolithic, thin-film CdTe/Ge tandem solar cells D.L. Pulfrey*, J. Dell): pulfrey@ece.ubc.ca ABSTRACT Cadmium telluride thin-film solar cells are now commercially available be attainable. 1. INTRODUCTION Thin film solar cells based on polycrystalline CdTe have been investigated

Pulfrey, David L.

284

Nuclear stopping in Au+Au collisions at root s(NN) = 200 GeV  

E-Print Network [OSTI]

Transverse momentum spectra and rapidity densities, dN/dy, of protons, antiprotons, and net protons (p-(p) over bar) from central (0%-5%) Au+Au collisions at roots(NN)=200 GeV were measured with the BRAHMS experiment within ...

Ito, H.; Kim, E. J.; Murray, Michael J.; Norris, J.; Sanders, Stephen J.

2004-09-01T23:59:59.000Z

285

Forward Di-hadron Asymmetries from p + p at ?s = 200 GeV at STAR  

E-Print Network [OSTI]

to Interference Fragmentation Functions (IFF) and the Sivers effect. In 2008, RHIC dedicated a portion of the run to transversely polarized proton collisions at sqrt(s) = 200 GeV. STAR was equipped with a Foward Meson Spectrometer (FMS) and a Forward Time...

Drachenberg, James Lucas

2012-07-16T23:59:59.000Z

286

FILE cur ;-^ A GE DOCUMENT NO. 78SDS4223 DEVELOPMENT AND DEMONSTRATION  

E-Print Network [OSTI]

DECEMBER 1977 4, space division I ^ -- -^^ITAP GENERAL ELECTRIC #12;GE DOCUMENT NO. 78SDS4223 DEVELOPMENT. COO/2911-2 JULY THROUGH DECEMBER 1977 GENERAL* ELECTRIC SPACE DIVISION Valley Forge Space Center P. 0-10 3-6 CO Emissions . . 3-11 3-7 Development Ceramic Burner ............. 3-13 3-8 Prototype 1

Oak Ridge National Laboratory

287

The GeV-TeV Connection in Galactic gamma-ray Sources  

SciTech Connect (OSTI)

Recent observations by atmospheric Cherenkov telescopes such as H.E.S.S. and MAGIC have revealed a large number of new sources of very-high-energy (VHE) gamma-rays above 100 GeV, mostly concentrated along the Galactic plane. At lower energies (100 MeV - 10 GeV) the satellite-based instrument EGRET revealed a population of sources clustering along the Galactic Plane. Given their adjacent energy bands a systematic correlation study between the two source classes seems appropriate. While only a few of the sources connect, both in terms of positional coincidence and spectral consistency, most of the detections occur only in one or the other energy domain. In these cases, for the first time consistent upper limits in the other energy band have been derived. Here, the populations of Galactic sources in both energy domains are characterized on observational as well as on theoretical grounds, followed by an interpretation on their similarities and differences. The observational data at this stage suggest rather different major source populations at GeV and TeV energies. With regards to preparations for the upcoming GLAST mission that will cover the energy range bridging GeV and TeV instruments this paper investigates the connection between the population of sources in these bands and concludes with predictions for commonly observable sources for GLAST-LAT detections.

Funk, S.; /KIPAC, Menlo Park; Reimer, O.; /Stanford U., HEPL /KIPAC, Menlo Park; Torres, Diego F.; /ICREA, Barcelona; Hinton, J.A.; /Leeds U.

2007-09-28T23:59:59.000Z

288

Fabrication and Testing Status of CEBAF 12 GeV Upgrade Cavities  

SciTech Connect (OSTI)

The 12 GeV upgrade of the Continuous Electron Beam Accelerator Facility (CEBAF) at Jefferson Laboratory (JLab) is under way. All cavities have been built by industry and are presently undergoing post-processing and final low and high power qualification before cryomodule assembly. The status is reported including fabrication-related experiences, observations and issues throughout production, post-processing and qualification.

Marhauser, F; Davis, G K; Forehand, D; Grenoble, C; Hogan, J; Overton, R B; Reilly, A V; Rimmer, R A

2011-09-01T23:59:59.000Z

289

Performance of First C100 Cryomodules for the CEBAF 12 GeV Upgrade Project  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility is currently engaged in the 12 GeV Upgrade Project. The goal of the project is a doubling of the available beam energy of CEBAF from 6 GeV to 12 GeV. This increase in beam energy will be due primarily to the construction and installation of ten "C100" cryomodules in the CEBAF linacs. The C100 cryomodules are designed to deliver an average 108 MV each from a string of eight seven-cell, electropolished superconducting RF cavities operating at an average accelerating gradient of 19.2 MV/m. The new cryomodules fit in the same available linac space as the original CEBAF 20 MV cryomodules. Cryomodule production started in September 2010. Initial acceptance testing started in June 2011. The first two C100 cryomodules were installed and tested from August 2011 through October 2011, and successfully operated during the last period of the CEBAF 6 GeV era, which ended in May 2012. This paper will present the results of acceptance testing and commissioning of the C100 style cryomodules to date.

Drury, Michael A.; Burrill, Andrew B.; Davis, G. Kirk; Hogan, John P.; King, Lawrence; Marhauser, Frank; Park, HyeKyoung; Preble, Joseph; Reece, Charles E.; Reilly, Anthony V.; Rimmer, Robert A.; Wang, Haipeng; Wiseman, Mark A.

2012-09-01T23:59:59.000Z

290

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs  

E-Print Network [OSTI]

Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and ...

Gomez, Leonardo

291

A search for GeV-TeV emission from GRBs with the Milagro detector  

E-Print Network [OSTI]

in the three years since the launch of Swift. Keywords: gamma-ray sources; gamma-ray bursts; astronomical observations gamma-ray PACS: 98.70.Rz,95.85.Pw Gamma-ray bursts (GRBs) have been detected up to GeV energies. B. Yodh CPIOOO, Gamma-Ray Bursts 2007: Proceedings of the Santa Fe Conference, edited by M. Galassi

California at Santa Cruz, University of

292

Adaptive Friction Compensation for Servo J. Wang, S. S. Ge, and T. H. Lee  

E-Print Network [OSTI]

Adaptive Friction Compensation for Servo Mechanisms J. Wang, S. S. Ge, and T. H. Lee Department@nus.edu.sg Abstract Friction exists in all machines having relative motion, and plays an important role in many servo, accurate friction modeling and effective compensation techniques have to be investigated. In this chapter

Ge, Shuzhi Sam

293

Fully-depleted Strained-Si on Insulator NMOSFETs without Relaxed SiGe Buffers  

E-Print Network [OSTI]

by wafer bonding and Smart-cut processes, is utilized for the first time to make strained-Si on insulator germanium diffusion into the strained Si, formation of low-resistance silicide and altered dopant diffusion SiGe is transferred by wafer bonding and Smart- cut to a BPSG layer, and during annealing the Si

294

Ion impact energy distribution and sputtering of Si and Ge M. Z. Hossain,a)  

E-Print Network [OSTI]

suggest that the energy deposition distri- bution differs from Sigmund's ellipsoidal assumption. It hasIon impact energy distribution and sputtering of Si and Ge M. Z. Hossain,a) J. B. Freund, and H. T 2012) The spatial distribution of ion deposited energy is often assumed to linearly relate to the local

Freund, Jonathan B.

295

The Jefferson Lab 12 GeV program on nucleon structure  

SciTech Connect (OSTI)

This slide-show presents the experiments planned at JLab with their 12 GeV upgrade. Experiments reported address: the use of hadron spectra as probes of QCD; the transverse structure of hadrons; the longitudinal structure of hadrons; the 3-dimensional structure of hadrons; hadrons and cold nuclear matter; and low-energy tests of the Standard Model and fundamental symmetries.

Burkert, Volker D. [JLAB

2013-10-01T23:59:59.000Z

296

Measurement of the Crab Flux Above 60 GeV with the CELESTE Cherenkov Telescope  

E-Print Network [OSTI]

We have converted the former solar electrical plant THEMIS (French Pyrenees) into an atmospheric Cherenkov detector called CELESTE, which records gamma rays above 30 GeV (7E24 Hz). Here we present the first sub-100 GeV detection by a ground based telescope of a gamma ray source, the Crab nebula, in the energy region between satellite measurements and imaging atmospheric Cherenkov telescopes. At our analysis threshold energy of 60 +/- 20 GeV we measure a gamma ray rate of 6.1 +/- 0.8 per minute. Allowing for 30% systematic uncertainties and a 30% error on the energy scale yields an integral gamma ray flux of I(E>60 GeV) = 6.2^{+5.3}_{-2.3} E-6 photons m^-2 s^-1. The analysis methods used to obtain the gamma ray signal from the raw data are detailed. In addition, we determine the upper limit for pulsed emission to be <12% of the Crab flux at the 99% confidence level, in the same energy range. Our result indicates that if the power law observed by EGRET is attenuated by a cutoff of form e^{-E/E_0} then E_0 &l...

De Naurois, Mathieu; Bazer-Bachi, R; Bergeret, H; Bruel, P; Cordier, A; Debiais, G; Dezalay, J P; Dumora, D; Durand, E; Eschstruth, P T; Espigat, P; Fabre, B; Fleury, P; Herault, N; Hrabovsky, M; Incerti, S; Le Gallou, R; Munz, F; Musquere, A; Olive, J F; Par, E; Quebert, J; Rannot, R C; Reposeur, T; Rob, L; Roy, P; Sako, T; Schovanek, P; Smith, D A; Snabre, P; Volte, A

2002-01-01T23:59:59.000Z

297

Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate  

E-Print Network [OSTI]

Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

Vuckovic, Jelena

298

A Search for GeV-TeV Emission from GRBs Using the Milagro Detector  

E-Print Network [OSTI]

with known redshift is reported. Keywords: -ray, -ray bursts, -ray telescope PACS: 95.85.Pw 98.70.Rz 95.55.Ka INTRODUCTION Milagro is ground-based gamma-ray observatory located in the Jemez mountains (2630 m a to search for >1 GeV emission from these bursts. Milagro is a water Cerenkov detector designed primarily

California at Santa Cruz, University of

299

Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si  

E-Print Network [OSTI]

Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si L. P Received 14 June 1999; accepted for publication 17 August 1999 We report infrared photocurrent PC-8 Quantum well infrared photodetector QWIP technol- ogy has matured rapidly in the last several years.1

Rokhinson, Leonid

300

Intersubband absorption in boron-doped multiple Ge quantum dots J. L. Liu,a)  

E-Print Network [OSTI]

Intersubband absorption in boron-doped multiple Ge quantum dots J. L. Liu,a) W. G. Wu, A. Balandin; accepted for publication 3 November 1998 The intersubband absorption in self-assembled boron-doped multiple and undoped Si barriers. The infrared absorption as a function of wavelength is measured by Fourier transform

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Effect of collector lateral scaling on performance of high-speed SiGe HBTs  

E-Print Network [OSTI]

Effect of collector lateral scaling on performance of high-speed SiGe HBTs with fT > 300 GHz J.-S. Rieh, M. Khater, A. Jeseph, G. Freeman and D. Ahlgren The effect of collector lateral scaling followed by a degradation with decreasing collector width. Possible causes behind the observed trend

Rieh, Jae-Sung

302

Optimization of antibody separation Master thesis at R&D, Protein Tools, GE Healthcare, Uppsala  

E-Print Network [OSTI]

Optimization of antibody separation Master thesis at R&D, Protein Tools, GE Healthcare, Uppsala point but in most cases the separation needs some optimization work to give the best possible starting protocol and then optimize the protocol by identifying important experimental factors that may

Uppsala Universitet

303

A Letter of Intent to The J-PARC 50 GeV Proton Synchrotron  

E-Print Network [OSTI]

system would also be provide higher intensity muon beams for the PRISM project. The proposed studies are to be made using small numbers ( 1,000 total) of intense proton pulses from the 50-GeV ring at J of Materials for Vacuum Windows . . . . . . . . . . . . 9 1.3.2 Studies of Carbon Targets . . . . . . . . . . . . . . . . . . .

McDonald, Kirk

304

Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2  

E-Print Network [OSTI]

of integration and packaging3 . Conventional Si or III-V based semiconductor materials have a low thermoelectric-plan thermal conductivity, electrical conductivity of SiGe superlattice5,6,7,8 . There are still very few; : electrical resistivity; KT: Thermal conductivity12 . Experiments The micro-cooler structure is based on cross

305

Search for GeV Emission from Gamma-Ray Bursts Using Milagro Scaler Data  

E-Print Network [OSTI]

Search for GeV Emission from Gamma-Ray Bursts Using Milagro Scaler Data D. A. Williams to search for high energy emission from a sample of 98 gamma-ray bursts (GRB) detected from January 2000: gamma-ray sources; gamma-ray bursts; astronomical observations: gamma-ray PACS: 98.70.Rz,95.85.Pw Air

California at Santa Cruz, University of

306

Azimuthal anisotropy in Au plus Au collisions at root S-NN=200 GeV  

E-Print Network [OSTI]

The results from the STAR Collaboration on directed flow (v(1)), elliptic flow (v(2)), and the fourth harmonic (v(4)) in the anisotropic azimuthal distribution of particles from Au+Au collisions at root s(NN) = 200 GeV are summarized and compared...

Adams, J.; Aggarwal, MM; Ahammed, Z.; Amonett, J.; Anderson, BD; Arkhipkin, D.; Averichev, GS; Badyal, SK; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, LS; Baudot, J.; Bekele, S.; Belaga, VV; Bellwied, R.; Berger, J.; Bezverkhny, BI; Bharadwaj, S.; Bhasin, A.; Bhati, AK; Bhatia, VS; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Billmeier, A.; Bland, LC; Blyth, CO; Bonner, BE; Botje, M.; Boucham, A.; Brandin, AV; Bravar, A.; Bystersky, M.; Cadman, RV; Cai, XZ; Caines, H.; Sanchez, MCD; Castillo, J.; Catu, O.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, HF; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, JP; Cormier, TM; Cramer, JG; Crawford, HJ; Das, D.; Das, S.; de Moura, MM; Derevschikov, AA; Didenko, L.; Dietel, T.; Dogra, SM; Dong, WJ; Dong, X.; Draper, JE; Du, F.; Dubey, AK; Dunin, VB; Dunlop, JC; Mazumdar, MRD; Eckardt, V.; Edwards, WR; Efimov, LG; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, Carl A.; Gaillard, L.; Gans, J.; Ganti, MS; Gaudichet, L.; Guerts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, JE; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, SM; Guo, Y.; Gupta, A.; Gutierrez, TD; Hallman, TJ; Hamed, A.; Hardtke, D.; Harris, JW; Heinz, M.; Henry, TW; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, GW; Huang, HZ; Huang, SL; Hughes, EW; Humanic, TJ; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, WW; Janik, M.; Jiang, H.; Jones, PG; Judd, EG; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, VY; Kiryluk, J.; Kisiel, A.; Kislov, EM; Klay, J.; Klein, SR; Koetke, DD; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, VI; Krueger, K.; Kuhn, C.; Kulikov, AI; Kumar, A.; Kutuev, RK; Kuznetsov, AA; Lamont, MAC; Landgraf, JM; Lange, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lehocka, S.; LeVine, MJ; Li, C.; Li, Q.; Li, Y.; Lin, G.; Lindenbaum, SJ; Lisa, MA; Liu, F.; Liu, L.; Liu, QJ; Liu, Z.; Ljubicic, T.; Llope, WJ; Long, H.; Langacre, RS; Lopez-Noriega, M.; Love, WA; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, GL; Ma, JG; Ma, YG; Magestro, D.; Mahajan, S.; Mahapatra, DP; Majka, R.; Mangotra, LK; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Marx, JN; Matis, HS; Matulenko, YA; McClain, CJ; McShane, TS; Meissner, F.; Melnick, Y.; Meschanin, A.; Miller, ML; Minaev, NG; Mironov, C.; Mischke, A.; Mishra, DK; Mitchell, J.; Mohanty, B.; Molnar, L.; Moore, CF; Morozov, DA; Munhoz, MG; Nandi, BK; Nayak, SK; Nayak, TK; Nelson, JM; Netrakanti, PK; Nikitin, VA; Nogach, LV; Nurushev, SB; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Pal, SK; Panebratsev, Y.; Panitkin, SY; Pavlinov, AI; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Petrov, VA; Phatak, SC; Picha, R.; Planinic, M.; Pluta, J.; Porile, N.; Porter, J.; Poskanzer, AM; Potekhin, M.; Potrebenikova, E.; Potukuchi, BVKS; Prindle, D.; Pruneau, C.; Putschke, J.; Rakness, G.; Raniwala, R.; Raniwala, S.; Ravel, O.; Ray, RL; Razin, SV; Reichhold, D.; Reid, JG; Renault, G.; Retiere, F.; Ridiger, A.; Ritter, HG; Roberts, JB; Rogachevskiy, OV; Romero, JL; Rose, A.; Roy, C.; Ruan, L.; Sahoo, R.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Sarsour, M.; Savin, I.; Sazhin, PS; Schambach, J.; Scharenberg, RP; Schmitz, N.; Schweda, K.; Seger, J.; Seyboth, P.; Shahaliev, E.; Shao, M.; Shao, W.; Sharma, M.; Shen, WQ; Shestermanov, KE; Shimanskiy, SS; Sichtermann, E.; Simon, F.; Singaraju, RN; Skoro, G.; Smirnov, N.; Snellings, R.; Sood, G.; Sorensen, P.; Sowinski, J.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, TDS; Stock, R.; Stolpovsky, A.; Strikhanov, M.; Stringfellow, B.; Suaide, AAP; Sugarbaker, E.; Suire, C.; Sumbera, M.; Surrow, B.; Symons, TJM; de Toledo, AS; Szarwas, P.; Tai, A.; Takahashi, J.; Tang, AH; Tarnowsky, T.; Thein, D.; Thomas, JH; Timoshenko, S.; Tokarev, M.; Trainor, TA; Trentalange, S.; Tribble, Robert E.; Tsai, OD; Ulery, J.; Ullrich, T.; Underwood, DG; Urkinbaev, A.; van Buren, G.; van Leeuwen, M.; Molen, AMV; Varma, R.; Vasilevski, IM; Vasiliev, AN; Vernet, R.; Vigdor, SE; Viyogi, YP; Vokal, S.; Voloshin, SA; Vznuzdaev, M.; Waggoner, WT; Wang, F.; Wang, G.; Wang, G.; Wang, XL; Wang, Y.; Wang, Y.; Wang, ZM; Ward, H.; Watson, JW; Webb, JC; Wells, R.; Westfall, GD; Wetzler, A.; Whitten, C.; Wieman, H.; Wissink, SW; Witt, R.; Wood, J.; Wu, J.; Xu, N.; Xu, Z.; Xu, ZZ; Yamamoto, E.; Yepes, P.; Yurevich, VI; Zanevsky, YV; Zhang, H.; Zhang, WM; Zhang, ZP; Zoulkarneev, R.; Zoulkarneeva, Y.; Zubarev, AN; Braem, A.; Davenport, M.; Cataldo, GD; Bari, DD; Martinengo, P.; Nappi, E.; Paic, G.; Posa, E.; Puiz, F.; Schyns, E.; Star Collaboration; STAR-RICH Collaboration.

2005-01-01T23:59:59.000Z

307

1 | Building America eere.energy.gov Evaluation of Ducted GE  

E-Print Network [OSTI]

: ­ Impact on space conditioning energy consumption and occupant comfort. ­ Impact on demand response space in a number of configurations and as a demand response asset. · This information is necessary1 | Building America eere.energy.gov Evaluation of Ducted GE Hybrid Heat Pump Water Heater in PNNL

308

GE Healthcare Data File 28-4046-59 AA Tagged protein purification  

E-Print Network [OSTI]

chromatography (IMAC). The column allows fast and simple small-scale purifications and is a valuable toolGE Healthcare Data File 28-4046-59 AA Tagged protein purification His SpinTrap His Spin and one purification run takes approx. 10 min. His SpinTrap allows: · High protein binding capacity

Lebendiker, Mario

309

GeM-REM: Generative Model-driven Resource efficient ECG Monitoring in Body Sensor Networks  

E-Print Network [OSTI]

GeM-REM: Generative Model-driven Resource efficient ECG Monitoring in Body Sensor Networks Sidharth electrocardiogram (ECG) monitoring. In such systems, sampling the ECG at clinically recommended rates (250 Hz, there is a need for reducing the energy consumption and data size at the sensor, while maintaining the ECG quality

Poovendran, Radha

310

Silicide/strained Si[sub 1[minus]x]Ge[sub x] Schottky-barrier infrared detectors  

SciTech Connect (OSTI)

By employing a thin silicon sacrificial cap layer for silicide formation the authors have successfully demonstrated Pd[sub 2]Si/ strained Si[sub 1[minus]x]Ge[sub x] Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si[sub 1[minus]x]Ge[sub x] alloy. The Schottky barrier height of the silicide/strained Si[sub 1[minus]x]Ge[sub x] detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8[mu]m in PtSi/Si[sub 0.85]Ge[sub 0.15] detectors. The authors have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

Xiao, X.; Sturm, J.C.; Parihar, S.R.; Lyon, S.A. (Princeton Univ., NJ (United States)); Meyerhofer, D.; Palfrey, S.; Shallcross, F.V. (David Sarnoff Research Center, Princeton, NJ (United States))

1993-04-01T23:59:59.000Z

311

Magnetic, Caloric and Crystallographic Properties of Dy5(SixGe1-x)4 Alloys  

SciTech Connect (OSTI)

Polycrystals of the intermetallic compound of the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system, where x = 0, 0.25, 0.5, 0.625, 0.675, 0.725, 0.75, 0.775, 0.825, 0.875, and 1, have been prepared by electric-arc-melting on water-cooled copper hearth in an argon atmosphere. A study of phase relationships and crystallography in the pseudobinary system Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} using X-ray powder diffraction data and optical metallography was completed. It revealed that silicides in the composition range from 0.825 to 1 crystallize in the Gd{sub 5}Si{sub 4}-type crystal structure: germanides in the composition range from 0 to 0.625 crystallize in the Sm{sub 5}Ge{sub 4}-type structure, and alloys with intermediate composition range from 0.675 to 0.775 crystallize in the monoclinic Gd{sub 5}Si{sub 2}Ge{sub 2}-type structure. The -{Delta}S{sub m} values were determined from magnetization measurements for 7 alloys. The alloys with a monoclinic crystal structure which belong to an intermediate phase region have large MCE value, which exceeds those observed in the other two phase regions by 300 to 500%. The nature of the observed magnetic and structural transformations in the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system seems to be similar with those reported for the Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system. However, the interval and concentration range of three different phase regions in the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system are different from that observed in Gd-based alloys. A non-collinear ordering of magnetic moments at low temperature was observed for the alloys with monoclinic crystal structure. The Dy{sub 5}Si{sub 3}Ge alloy exhibited FM phase transition below Curie temperature. A series of magnetic transitions were observed at low temperature in the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} alloys. The number of transitions increased and the magnetization decreased with increasing germanium content in the alloys. The -{Delta}S{sub m} and -{Delta}T values were calculated from heat capacity data for Dy{sub 5}Si{sub 3.5}Ge{sub 0.5} and Dy{sub 5}Si{sub 4} alloys only, due to the fragile nature of the germanides-rich samples. Based on the MCe values, the alloys from the orthorhombic Dy{sub 5}Si{sub 4}-based solid solution and the intermediate monoclinic phase regions may be useful magnetic refrigerant materials in the temperature range {approx}50K to -160K.

Vitaliy Vladislavovich Ivchenko

2002-07-19T23:59:59.000Z

312

Thermodynamic and transport properties of single crystalline RCo2Ge2 (R=Y, LaNd, SmTm)  

SciTech Connect (OSTI)

Single crystals of RCo2Ge2 (R=Y, LaNd, SmTm) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction; anisotropic, temperature and field dependent magnetization; temperature and field dependent, in-plane resistivity; and specific heat measurements. In this series, the majority of the moment-bearing members order antiferromagnetically; YCo2Ge2 and LaCo2Ge2 are non-moment-bearing. Ce is trivalent in CeCo2Ge2 at high temperatures, and exhibits an enhanced electronic specific heat coefficient due to the Kondo effect at low temperatures. In addition, CeCo2Ge2 shows two low-temperature anomalies in temperature-dependent magnetization and specific heat measurements. Three members (R=TbHo) have multiple phase transitions above 1.8 K. Eu appears to be divalent with total angular momentum L =0. Both EuCo2Ge2 and GdCo2Ge2 manifest essentially isotropic paramagnetic properties consistent with J =S =7/2. Clear magnetic anisotropy for rare-earth members with finite L was observed, with ErCo2Ge2 and TmCo2Ge2 manifesting planar anisotropy and the rest members manifesting axial anisotropy. The experimentally estimated crystal electric field (CEF) parameters B 20 were calculated from the anisotropic paramagnetic ? ab and ? c values and follow a trend that agrees well with theoretical predictions. The ordering temperatures, TNTN, as well as the polycrystalline averaged paramagnetic CurieWeiss temperature, ?avg, for the heavy rare-earth members deviate from the de Gennes scaling, as the magnitude of both is the highest for Tb, which is sometimes seen for extremely axial systems. Except for SmCo2Ge2, metamagnetic transitions were observed at 1.8 K for all members that ordered antiferromagnetically.

Kong, Tai [Ames Laboratory; Cunningham, Charles E. [Grinnell College; Taufour, Valentin [Iowa State University; Budko, Sergey L. [Ames Laboratory; Buffon, Malinda L.C. [Ames Laboratory; Lin, Xiao [Ames Laboratory; Emmons, Heather [Grinnell College; Canfield, Paul C. [Ames Laboratory

2014-02-04T23:59:59.000Z

313

Study on the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1?x}Sn{sub x} tunneling transistor  

SciTech Connect (OSTI)

In this paper, we employ first-principle calculation to investigate the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1?x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1?x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1?x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1?x}Sn{sub x} TFET.

Qiu, Yingxin; Wang, Runsheng, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn; Huang, Qianqian; Huang, Ru, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn [Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871 (China)

2014-06-21T23:59:59.000Z

314

Preparation, crystallography, magnetic and magnetothermal properties of Ce5SiGe4-x alloys  

SciTech Connect (OSTI)

An investigation of the crystal structure and the phase relationships in the Ce{sub 5}Si{sub 4-x}Ge{sub x} system has been carried out. The crystal structures of the single phase intermetallics were characterized using X-ray powder diffraction and subsequent refinement employing the Rietveld analysis technique was performed. The intermetallic system was found to crystallize in three distinct crystal structures. The Ce{sub 5}Si{sub 4}-based solid solution extends from x = 0 to x = 2.15 and it was found to crystallize in the well-known Zr{sub 5}Si{sub 4}-type tetragonal structure. The germanium rich alloys, where 3.1 {le} x {le} 4, crystallized in the Sm{sub 5}Ge{sub 4}-type orthorhombic structure. The crystal structure of the intermediate phase, when 2.35 {le} x {le} 2.8, was found out to be of the Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic structure. Microhardness tests were conducted on the samples in order to probe the trend in mechanical properties in this alloy system as a function of Ge concentration. The magnetic, thermal and magnetocaloric properties of the Ce{sub 5}Si{sub 4-x}Ge{sub x} alloy system have been investigated for x = 0, 1.0, 1.8, 2.5, 2.8, 3.5, 3.8 and 4.0. The phases with x = 0, 1.0 and 1.8 crystallize in the tetragonal Zr{sub 5}Si{sub 4} structure and those with x = 2.5, 2.8 form in the Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic structure. The alloys with x = 3.5, 3.8 and 4.0 crystallize in the Sm{sub 5}Ge{sub 4}-type orthorhombic structure. The Curie temperature of the tetragonal phases increases with increasing Ge content. The ordering temperatures of the monoclinic and orthorhombic phases remain nearly unaffected by the composition, with the Curie temperatures of the latter slightly higher than those of the former. All the alloys display evidence of antiferromagnetic interactions in the ground state. The orthorhombic and the monoclinic alloys behave as ferromagnets whereas the Si-rich tetragonal phase acts more like an antiferromagnet at high fields (1 T and higher). The maximum isothermal magnetic entropy change occurs at {approx}11 K in the monoclinic and orthorhombic phases with the highest value being 14.7 J/kg.K for Ce{sub 5}Ge{sub 4} for a field change of 10 T which is considered moderate.

Vijayaraghavan, Rangarajan

2005-05-01T23:59:59.000Z

315

Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses  

SciTech Connect (OSTI)

Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

2014-03-21T23:59:59.000Z

316

Atomic scale insight into the amorphous structure of Cu doped GeTe phase-change material  

SciTech Connect (OSTI)

GeTe shows promising application as a recording material for phase-change nonvolatile memory due to its fast crystallization speed and extraordinary amorphous stability. To further improve the performance of GeTe, various transition metals, such as copper, have been doped in GeTe in recent works. However, the effect of the doped transition metals on the stability of amorphous GeTe is not known. Here, we shed light on this problem for the system of Cu doped GeTe by means of ab initio molecular dynamics calculations. Our results show that the doped Cu atoms tend to agglomerate in amorphous GeTe. Further, base on analyzing the pair correlation functions, coordination numbers and bond angle distributions, remarkable changes in the local structure of amorphous GeTe induced by Cu are obviously seen. The present work may provide some clues for understanding the effect of early transition metals on the local structure of amorphous phase-change compounds, and hence should be helpful for optimizing the structure and performance of phase-change materials by doping transition metals.

Zhang, Linchuan; Sa, Baisheng [Department of Materials Science and Engineering, College of Materials, Xiamen University, Xiamen 361005 (China); Zhou, Jian; Sun, Zhimei, E-mail: zmsun@buaa.edu.cn [School of Materials Science and Engineering, and Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191 (China); Song, Zhitang [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, CAS, 200050 Shanghai (China)

2014-10-21T23:59:59.000Z

317

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation  

SciTech Connect (OSTI)

A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.

Zhou, Tong; Zhong, Zhenyang, E-mail: zhenyangz@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)

2014-02-01T23:59:59.000Z

318

Generation of tunable mid-IR radiation by second harmonic in a CdGeAs{sub 2} crystal  

SciTech Connect (OSTI)

Tunable mid-IR radiation is obtained during second harmonic generation of tunable CO{sub 2}-laser radiation using a CdGeAs{sub 2} crystal. Its angular tuning characteristics at the CO{sub 2}- laser wavelength, angular acceptance angle and spectral acceptance are measured. For second harmonic generation at 10.6 {mu}m, the conversion efficiency in the CdGeAs{sub 2} crystal is 90 times higher than that in the ZnGeP{sub 2} crystal.

Das, S [Laser Laboratory, Department of Physics, Burdwan University, Burdwan (India)

2012-03-31T23:59:59.000Z

319

(GeTe){sub n}SbInTe{sub 3} (n?3)Element distribution and thermal behavior  

SciTech Connect (OSTI)

Antimony in germanium antimony tellurides (GeTe){sub n}(Sb{sub 2}Te{sub 3}) can be substituted by indium. Homogeneous bulk samples of GeSbInTe{sub 4} (R3-bar m, Z=3, a=4.21324(5) , c=41.0348(10) ) and Ge{sub 2}SbInTe{sub 5} (P3-bar m1, Z=1, a=4.20204(6) , c=17.2076(4) ) were obtained; their structures were refined with the Rietveld method. Single-crystal X-ray diffraction using synchrotron radiation at the K edges of Sb and Te (exploiting anomalous dispersion) yields precise information on the element distribution in the trigonal layered structure of Ge{sub 3}SbInTe{sub 6} (R3-bar m, Z=3, a=4.19789(4) , c=62.1620(11) ). The structure is characterized by van der Waals gaps between distorted rocksalt-type slabs of alternating cation and anion layers. The cation concentration is commensurately modulated with Sb preferring the positions near the gaps. In contrast to unsubstituted Ge{sub 3}Sb{sub 2}Te{sub 6}, quenching the NaCl-type high-temperature phase (stable above ?510 C) easily yields a pseudocubic modification that is metastable at ambient conditions. Temperature-dependent powder diffraction reveals a broader stability range of the cubic high-temperature modification of Ge{sub 3}SbInTe{sub 6} compared to the ternary phases. In-containing samples partially decompose at ca. 300 C but become homogeneous again when the high-temperature phase is formed. - Graphical abstract: Crystal structure of 33R-Ge{sub 3}SbInTe{sub 6} as determined by resonant X-ray diffraction, one example of the (GeTe){sub n}SbInTe{sub 3} series of compounds investigated. - Highlights: The new compounds 21R-GeSbInTe{sub 4}, 9P-Ge{sub 2}SbInTe{sub 5} and 33R-Ge{sub 3}SbInTe are described. The element distribution in 33R-Ge{sub 3}SbInTe{sub 6} was determined by resonant scattering. The cation concentration in the crystal structure is strongly modulated. The Sb substitution by In has a significant impact on phase transitions. Results may be relevant for thermoelectrics and thin-film phase-change materials.

Fahrnbauer, Felix; Urban, Philipp; Welzmiller, Simon [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststrae 20, 04275 Leipzig (Germany); Schrder, Thorsten; Rosenthal, Tobias [Department of Chemistry, Ludwig Maximilian University, Butenandtstrae 5-13, 81377 Munich (Germany); Oeckler, Oliver, E-mail: oliver.oeckler@gmx.de [Institute for Mineralogy, Crystallography and Materials Science, Leipzig University, Scharnhorststrae 20, 04275 Leipzig (Germany); Department of Chemistry, Ludwig Maximilian University, Butenandtstrae 5-13, 81377 Munich (Germany)

2013-12-15T23:59:59.000Z

320

Dielectron Production in C+C Collisions at 1 GeV/u and the Solution to the DLS Puzzle  

E-Print Network [OSTI]

The production of e+e- pairs in C+C collisions at 1 GeV/u was investigated with the HADES experiment at GSI, Darmstadt. In the invariant-mass region $ 0.15\\: GeV/c^{2} \\leq M_{ee} \\leq 0.5\\: GeV/c^{2}$ the measured pair yield shows a strong excess above the contribution expected from hadron decays after freeze-out. The data are in good agreement with the results of the former DLS experiment for the same system and energy.

Y. C. Pachmayer; for the HADES collaboration

2008-04-24T23:59:59.000Z

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321

Experimental efforts in search of 76Ge Neutrinoless Double Beta Decay  

E-Print Network [OSTI]

Neutrinoless double beta decay is one of the most sensitive approaches in non-accelerator particle physics to take us into a regime of physics beyond the standard model. This article is a brief review of the experiments in search of neutrinoless double beta decay from 76Ge. Following a brief introduction of the process of double beta decay from 76Ge, the results of the very first experiments IGEX and Heidelberg-Moscow which give indications of the existence of possible neutrinoless double beta decay mode has been reviewed. Then ongoing efforts to substantiate the early findings are presented and the Majorana experiment as a future experimental approach which will allow a very detailed study of the neutrinoless decay mode is discussed.

Somnath Choudhury

2008-03-12T23:59:59.000Z

322

An alternative route for efficient optical indirect-gap excitation in Ge  

SciTech Connect (OSTI)

We explored optical excitation pathways in the multivalley semiconductor Ge in an attempt to expedite selective electron injection into the indirect L-band-edge. An off-peak resonant excitation route was developed, which offers the pumping efficiency outperforming the phonon-assisted near-indirect-edge absorption by more than six orders of magnitude. The valley selectivity results from the intra-valley relaxation that separates electrons and holes in momentum space following excitation. Fortuitously, the widely used green laser, 532?nm, is found to be nearly ideally suited to the efficient L-valley-selective excitation in Ge. Such valley-specific pumping may help clarify the otherwise complicated electron dynamics involving intervalley processes.

Sakamoto, Tetsuya; Hayashi, Shuhei; Fukatsu, Susumu, E-mail: cfkatz@mail.ecc.u-tokyo.ac.jp [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yasutake, Yuhsuke [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012 (Japan)

2014-07-28T23:59:59.000Z

323

Predictions for {radical} (s) =200A; GeV Au+Au collisions from relativistic hydrodynamics  

SciTech Connect (OSTI)

The relativistic hydrodynamical model HYLANDER-C is used to give estimates for single inclusive particle momentum spectra in {radical} (s) =200 GeV/nucleon Au+Au collisions that will be investigated experimentally in the near future. The predictions are based on initial conditions that the initial fireball has a longitudinal extension of 1.6 fm and an initial energy density of 30.8 GeV/fm{sup 3} as obtained from a cascade model. For the collision energy considered here, different stopping scenarios are explored for the first time. Our calculations give particle yields of the order of 10thinsp000 to 20thinsp000 charged particles per event. {copyright} {ital 1999} {ital The American Physical Society}

Schlei, B.R. [Physics Division, P-25, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Physics Division, P-25, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Schlei, B.R.; Strottman, D. [Theoretical Division, DDT-DO, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Theoretical Division, DDT-DO, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

1999-01-01T23:59:59.000Z

324

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

325

A proposal for a 1 GeV plasma-wakefield acceleration experiment at SLAC  

SciTech Connect (OSTI)

A plasma-based wakefield acceleration (PWFA) experiment is proposed that will accelerate parts of an SLC bunch by up to 1 GeV/m over a length of 1 m. A single SLC bunch is used to both induce wakefields in the one meter long plasma and to witness the resulting beam acceleration. The proposed experiment will explore and further develop the techniques that are needed to apply high-gradient plasma wakefield acceleration to large scale accelerators. The one meter length of the experiment is about two orders of magnitude larger than other high-gradient PWFA experiments and the 1 GeV/m accelerating gradient is roughly ten times larger than that achieved with conventional metallic structures. Using existing SLAC facilities, the proposed experiment will allow the study of high-gradient acceleration at the forefront of advanced accelerator research.

Katsouleas, T.; Lee, S. [Univ. of Southern California, Los Angeles, CA (United States); Assmann, R. [Stanford Linear Accelerator Center, Menlo Park, CA (United States)] [and others

1997-07-01T23:59:59.000Z

326

N-type doping of Ge by As implantation and excimer laser annealing  

SciTech Connect (OSTI)

The diffusion and activation of arsenic implanted into germanium at 40?keV with maximum concentrations below and above the solid solubility (8??10{sup 19}?cm{sup ?3}) have been studied, both experimentally and theoretically, after excimer laser annealing (??=?308?nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1??10{sup 20}?cm{sup ?3}, which represents a new record for the As-doped Ge system.

Milazzo, R.; Napolitani, E., E-mail: enrico.napolitani@unipd.it; De Salvador, D.; Mastromatteo, M.; Carnera, A. [CNR-IMM MATIS and Dipartimento di Fisica Astronomia, Universit di Padova, Via Marzolo 8, 35131 Padova (Italy); Impellizzeri, G.; Boninelli, S.; Priolo, F.; Privitera, V. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Universit di Catania, Via S. Sofia 64, 95123 Catania (Italy); Fisicaro, G.; Italia, M.; La Magna, A. [CNR-IMM, Z.I. VIII Strada 5, 95121 Catania (Italy); Cuscun, M.; Fortunato, G. [CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)

2014-02-07T23:59:59.000Z

327

SRF CAVITY PERFORMANCE OVERVIEW FOR THE 12 GeV UPGRADE  

SciTech Connect (OSTI)

The CEBAF accelerator, a recirculating CW electron accelerator that is currently operating at Jefferson Laboratory, is in the process of having 10 new cryomodules installed to allow for the maximum beam energy to be increased from 6 GeV to 12 GeV. This upgrade required the fabrication, processing and RF qualification of 80, seven cell elliptical SRF cavities, a process that was completed in February 2012. The RF performance achieve in the vertical testing dewars has exceeded the design specification by {approx}25% and is a testament to the cavity design and processing cycle that has been implemented. This paper will provide a summary of the cavity RF performance in the vertical tests, as well as review the overall cavity processing cycle and duration for the project.

A. Burrill, G.K. Davis, C.E. Reece, A.V. Reilly, M. Stirbet

2012-07-01T23:59:59.000Z

328

An overview of the planned Jefferson Lab 12-GeV helium refrigerator upgrade  

SciTech Connect (OSTI)

In February 2006, Jefferson Laboratory in Newport News, VA, received Critical Decision 1 (CD-1) approval to proceed with the engineering and design of the long anticipated upgrade to increase the beam energy of CEBAF, the Continuous Electron Beam Accelerator Facility, from 6 GeV to 12 GeV. This will require the installation of 10 new cryomodules, and additional 2.1-K refrigeration beyond the available 4600 W to handle the increased heat loads. Additionally, a new experimental hall, Hall D, is planned that will require the installation of a small, available refrigerator. This paper will present an overview of the integration of the new proposed refrigeration system into CEBAF, the installation of the available refrigerator for Hall D, and includes planned work scope, current schedule plans and project status.

Arenius, Dana; Creel, Jonathan; Dixon, Kelly; Ganni, Venkatarao; Knudsen, Peter; Sidi-Yekhlef, Ahmed; Wright, Mathew

2008-03-01T23:59:59.000Z

329

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network [OSTI]

The SciBooNE Collaboration reports a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8~GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction simulations: NEUT and NUANCE. The charged current interaction rates (product of flux and cross section) are extracted by fitting the muon kinematics, with a precision of 6-15% for the energy dependent and 3% for the energy integrated analyses. We also extract CC inclusive interaction cross sections from the observed rates, with a precision of 10-30% for the energy dependent and 8% for the energy integrated analyses. This is the first measurement of the CC inclusive cross section on carbon around 1 GeV. These results can be used to convert previous SciBooNE cross section ratio measurements to absolute cross section values.

jima, Y Naka; Brice, S J; Bugel, L; Catala-Perez, J; Cheng, G; Conrad, J M; Djurcic, Z; Dore, U; Finley, D A; Franke, A J; Giganti, C; Gomez-Cadenas, J J; Guzowski, P; Hanson, A; Hayato, Y; Hiraide, K; Jover-Manas, G; Karagiorgi, G; Katori, T; Kobayashi, Y K; Kobilarcik, T; Kubo, H; Kurimoto, Y; Louis, W C; Loverre, P F; Ludovici, L; Mahn, K B M; Mariani, C; Masuike, S; Matsuoka, K; McGary, V T; Metcalf, W; Mills, G B; Mitsuka, G; Miyachi, Y; Mizugashira, S; Moore, C D; Nakaya, T; Napora, R; Nienaber, P; Orme, D; Otani, M; Russell, A D; Sanchez, F; Shaevitz, M H; Shibata, T -A; Sorel, M; Stefanski, R J; Takei, H; Tanaka, H -K; Tanaka, M; Tayloe, R; Taylor, I J; Tesarek, R J; Uchida, Y; Van de Water, R; Walding, J J; Wascko, M O; White, H B; Yokoyama, M; Zeller, G P; Zimmerman, E D

2010-01-01T23:59:59.000Z

330

Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate  

SciTech Connect (OSTI)

Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrdinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

Ye, Han, E-mail: Dabombyh@aliyun.com; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.China (China)

2014-11-15T23:59:59.000Z

331

Status of the GERDA experiment aimed to search for neutrinoless double beta decay of 76Ge  

E-Print Network [OSTI]

The progress in the development of the new international Gerda (GErmanium Detector Array) experiment is presented. Main purpose of the experiment is to search for the neutrinoless double beta decay of 76Ge. The experimental set up is under construction in the underground laboratory of LNGS. Gerda will operate with bare germanium semiconductor detectors (enriched in 76Ge) situated in liquid argon. In the Phase I the existing enriched detectors from the previous Heidelberg-Moscow and IGEX experiments are employed, in the Phase II the new segmented detectors made from recently produced enriched material will be added. Novel concepts for background suppression including detector segmentation and anti-coincidence with LAr scintillation are developed.

Anatoly A. Smolnikov; for the GERDA Collaboration

2008-12-22T23:59:59.000Z

332

MeV-GeV emission from neutron-loaded short gamma-ray burst jets  

E-Print Network [OSTI]

Recent discovery of the afterglow emission from short gamma-ray bursts suggests that binary neutron star or black hole-neutron star binary mergers are the likely progenitors of these short bursts. The accretion of neutron star material and its subsequent ejection by the central engine implies a neutron-rich outflow. We consider here a neutron-rich relativistic jet model of short bursts, and investigate the high energy neutrino and photon emission as neutrons and protons decouple from each other. We find that upcoming neutrino telescopes are unlikley to detect the 50 GeV neutrinos expected in this model. For bursts at z~0.1, we find that GLAST and ground-based Cherenkov telescopes should be able to detect prompt 100 MeV and 100 GeV photon signatures, respectively, which may help test the neutron star merger progenitor identification.

Soebur Razzaque; Peter Meszaros

2006-06-28T23:59:59.000Z

333

The MAGIC Telescope Project for Gamma Astronomy above 10 GeV  

E-Print Network [OSTI]

A project to construct a 17 m diameter imaging air Cherenkov telescope, called the MAGIC Telescope, is described. The aim of the project is to close the observation gap in the gamma-ray sky extending from 10 GeV as the highest energy measurable by space-borne experiments to 300 GeV, the lowest energy measurable by the current generation of ground-based Cherenkov telescopes. The MAGIC Telescope will incorporate several new features in order to reach the very low energy threshold. At the same time the new technology will yield an improvement in sensitivity in the energy region where current Cherenkov telescopes are measuring by about an order of magnitude.

N. Magnussen

1998-05-14T23:59:59.000Z

334

GeV electrons due to a transition from laser wakefield acceleration to plasma wakefield acceleration  

E-Print Network [OSTI]

We show through experiments that a transition from laser wakefield acceleration (LWFA) regime to a plasma wakefield acceleration (PWFA) regime can drive electrons up to energies close to the GeV level. Initially, the acceleration mechanism is dominated by the bubble created by the laser in the nonlinear regime of LWFA, leading to an injection of a large number of electrons. After propagation beyond the depletion length, leading to a depletion of the laser pulse, whose transverse ponderomotive force is not able to sustain the bubble anymore, the high energy dense bunch of electrons propagating inside bubble will drive its own wakefield by a PWFA regime. This wakefield will be able to trap and accelerate a population of electrons up to the GeV level during this second stage. Three dimensional (3D) particle-in-cell (PIC) simulations support this analysis, and confirm the scenario.

P. E. Masson-Laborde; M. Z. Mo; A. Ali; S. Fourmaux; P. Lassonde; J. C. Kieffer; W. Rozmus; D. Teychenne; R. Fedosejevs

2014-08-06T23:59:59.000Z

335

Study of the dp-elastic scattering at 2 GeV  

E-Print Network [OSTI]

The results on the measurements of dp-elastic scattering cross section at the energy 2 GeV at Internal Target Station at the Nuclotron JINR are reported. The data were obtained for the angular range of 70-107 deg. in the c.m.s. by using CH2 and C targets. The results are compared with the existing data and with the theoretical calculations based on the relativistic multiple scattering theory.

Terekhin, A A; Isupov, A Yu; Khrenov, A N; Kurilkin, A K; Kurilkin, P K; Ladygin, V P; Ladygina, N B; Piyadin, S M; Reznikov, S G; Vnukov, I E

2015-01-01T23:59:59.000Z

336

th e Line Between Oses n t r ge e i es  

E-Print Network [OSTI]

Blurring th e Line Between Oses n t r ge e i es str t This report m es se or more e pressi e it er es et ee opert i s st ems es st or e e i est o s s st emst he st or e it er e o sist s m i o simp e read write omm s s rest es opert e it h

337

Updated Report Acceleration of Polarized Protons to 120-150 GeV/c at Fermilab  

E-Print Network [OSTI]

The SPIN@FERMI collaboration has updated its 1991-95 Reports on the acceleration of polarized protons in Fermilab's Main Injector, which was commissioned by Fermilab. This Updated Report summarizes some updated Physics Goals for a 120-150 GeV/c polarized proton beam. It also contains an updated discussion of the Modifications and Hardware needed for a polarized beam in the Main Injector, along with an updated Schedule and Budget.

E. D. Courant; A. D. Krisch; M. A. Leonova; A. M. T. Lin; J. Liu; W. Lorenzon; D. A. Nees; R. S. Raymond; D. W. Sivers; V. K. Wong; I. Kourbanis; Ya. S. Derbenev; V. S. Morozov; D. G. Crabb; P. E. Reimer; J. R. O'Fallon; G. Fidecaro; M. Fidecaro; F. Hinterberger; S. M. Troshin; M. N. Ukhanov; A. M. Kondratenko; W. T. H. van Oers

2011-10-13T23:59:59.000Z

338

GeV-TeV and X-ray flares from gamma-ray bursts  

E-Print Network [OSTI]

The recent detection of delayed X-ray flares during the afterglow phase of gamma-ray bursts (GRBs) suggests an inner-engine origin, at radii inside the deceleration radius characterizing the beginning of the forward shock afterglow emission. Given the observed temporal overlapping between the flares and afterglows, there must be inverse Compton (IC) emission arising from such flare photons scattered by forward shock afterglow electrons. We find that this IC emission produces GeV-TeV flares, which may be detected by GLAST and ground-based TeV telescopes. We speculate that this kind of emission may already have been detected by EGRET from a very strong burst--GRB940217. The enhanced cooling of the forward shock electrons by the X-ray flare photons may suppress the synchrotron emission of the afterglows during the flare period. The detection of GeV-TeV flares combined with low energy observations may help to constrain the poorly known magnetic field in afterglow shocks. We also consider the self-IC emission in the context of internal-shock and external-shock models for X-ray flares. The emission above GeV from internal shocks is low, while the external shock model can also produce GeV-TeV flares, but with a different temporal behavior from that caused by IC scattering of flare photons by afterglow electrons. This suggests a useful approach for distinguishing whether X-ray flares originate from late central engine activity or from external shocks.

Xiang-Yu Wang; Zhuo Li; Peter Meszaros

2006-03-13T23:59:59.000Z

339

Characterization of GE Interactions on Yield and Quality of Muskmelon (Cucumis melo L.)  

E-Print Network [OSTI]

E to total variation of yield and components in melons ............................. 17 Table 2.4 ANOVA of genotype (G), environment (E), and genotype environment (GE) and percent contribution of G, E, and G... of phytochemicals over different environments. 8 2.2 Materials and methods Five commercial cultivars Mission, Journey, Orange Dew, Oro Duro, Sol Real and four advanced breeding lines TAMU 146, TAMU Orange Casaba, TAMU F39, and TAMU 1405 from the melon...

Sharma, Sat Pal

2014-07-13T23:59:59.000Z

340

Study of plutonium disposition using existing GE advanced Boiling Water Reactors  

SciTech Connect (OSTI)

The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.

Not Available

1994-06-01T23:59:59.000Z

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341

GeV Gamma-ray Flux Upper Limits from Clusters of Galaxies  

E-Print Network [OSTI]

The detection of diffuse radio emission associated with clusters of galaxies indicates populations of relativistic leptons infusing the intracluster medium. Those electrons and positrons are either injected into and accelerated directly in the intracluster medium, or produced as secondary pairs by cosmic-ray ions scattering on ambient protons. Radiation mechanisms involving the energetic leptons together with decay of neutral pions produced by hadronic interactions have the potential to produce abundant GeV photons. Here, we report on the search for GeV emission from clusters of galaxies using data collected by the Large Area Telescope (LAT) on the Fermi Gamma-ray Space Telescope (Fermi) from August 2008 to February 2010. Thirty-three galaxy clusters have been selected according to their proximity and high mass, X-ray flux and temperature, and indications of non-thermal activity for this study. We report upper limits on the photon flux in the range 0.2-100 GeV towards a sample of observed clusters (typical va...

al., M Ackermann et

2010-01-01T23:59:59.000Z

342

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

SciTech Connect (OSTI)

An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA) that will be driven by a PW-class laser system and of the BELLA Project, which has as its primary goal to build and install the required Ti:sapphire laser system for the acceleration experiments. The basic design of the 10 GeV stage aims at operation in the quasi-linear regime, where the laser excited wakes are largely sinusoidal and offer the possibility of accelerating both electrons and positrons. Simulations show that a 10 GeV electron beam can be generated in a meter scale plasma channel guided LPA operating at a density of about 1017 cm-3 and powered by laser pulses containing 30-40 J of energy in a 50- 200 fs duration pulse, focused to a spotsize of 50-100 micron. The lay-out of the facility and laser system will be presented as well as the progress on building the facility.

Leemans, W.P.; Duarte, R.; Esarey, E.; Fournier, S.; Geddes, C.G.R.; Lockhart, D.; Schroeder, C.B.; Toth, C.; Vay, J.-L.; Zimmermann, S.

2010-06-01T23:59:59.000Z

343

Optical and GeV-TeV flashes from gamma-ray bursts  

E-Print Network [OSTI]

The synchrotron optical flash caught in GRB 990123 overlaps with the MeV radiation front, and the optical-emitting electrons must also produce GeV-TeV emission by inverse Compton scattering of MeV photons. The ultra-high-energy flash can be much stronger than its optical counterpart. We also note that Compton cooling by MeV photons immediately terminates the optical emission unless the fireball Lorentz factor exceeds 10^3. Severe Compton losses may explain the non-detections of optical flashes in several long GRBs. Such failed optical flashes should be especially efficient GeV producers and likely to develop e+- cascades. This probably happened in GRB 941017, and its mysterious high-energy component is well explained by Compton upscattering of GRB photons at the fireball deceleration radius. The proposed mechanism of GeV emission should not work for short gamma-ray bursts that early decouple from the fireball and avoid interaction with the electrons in the deceleration flash. Observations by Swift and GLAST will provide an opportunity to test these expectations. The existing data for GRB 990123 already impose interesting constraints on the explosion.

Andrei M. Beloborodov

2004-11-19T23:59:59.000Z

344

Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures  

SciTech Connect (OSTI)

Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

2014-07-14T23:59:59.000Z

345

LArGe - Active background suppression using argon scintillation for the GERDA $0\  

E-Print Network [OSTI]

LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for future application in the GERDA experiment. Similar to GERDA, LArGe operates bare germanium detectors submersed into liquid argon (1 m$^3$, 1.4 tons), which in addition is instrumented with photomultipliers to detect argon scintillation light. The scintillation signals are used in anti-coincidence with the germanium detectors to effectively suppress background events that deposit energy in the liquid argon. The background suppression efficiency was studied in combination with a pulse shape discrimination (PSD) technique using a BEGe detector for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times $10^3$ have been achieved. First background data of LArGe with a coaxial HPGe detector (without PSD) yield a background index of (0.12$-$4.6)$\\cdot 10^{-2}$ cts/(keV$\\cdot$kg$\\cdot$y) (90% C.L.), which is at the level of GERDA Phase I. Fu...

Agostini, M; Budj, D; Cattadori, C; Gangapshev, A; Gusev, K; Heisel, M; Junker, M; Klimenko, A; Lubashevskiy, A; Pelczar, K; Schnert, S; Smolnikov, A; Zuzel, G

2015-01-01T23:59:59.000Z

346

ON THE ORIGIN OF > 10 GeV PHOTONS IN GAMMA-RAY BURST AFTERGLOWS  

SciTech Connect (OSTI)

Fermi/LAT has detected long-lasting high-energy photons (>100 MeV) from gamma-ray bursts (GRBs), with the highest energy photons reaching about 100 GeV. One proposed scenario is that they are produced by high-energy electrons accelerated in GRB forward shocks via synchrotron radiation. We study the maximum synchrotron photon energy in this scenario, considering the properties of the microturbulence magnetic fields behind the shock, as revealed by recent particle-in-cell simulations and theoretical analyses of relativistic collisionless shocks. Due to the small-scale nature of the microturbulent magnetic field, the Bohm acceleration approximation, in which the scattering mean free path is equal to the particle Larmor radius, breaks down at such high energies. This effect leads to a typical maximum synchrotron photon of a few GeV at 100 s after the burst and this maximum synchrotron photon energy decreases quickly with time. We show that the fast decrease of the maximum synchrotron photon energy leads to a fast decay of the synchrotron flux. The 10-100 GeV photons detected after the prompt phase cannot be produced by the synchrotron mechanism. They could originate from the synchrotron self-Compton emission of the early afterglow if the circumburst density is sufficiently large, or from the external inverse Compton process in the presence of central X-ray emission, such as X-ray flares and prompt high-latitude X-ray emission.

Wang Xiangyu; Liu Ruoyu [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Lemoine, Martin [Institut d'Astrophysique de paris, CNRS, UPMC, 98 bis boulevard Arago, F-75014 Paris (France)

2013-07-10T23:59:59.000Z

347

System-size and centrality dependence of charged kaon and pion production in nucleus-nucleus collisions at 40A GeV and158A GeV beam energy  

E-Print Network [OSTI]

Measurements of charged pion and kaon production are presented in centrality selected Pb+Pb collisions at 40A GeV and 158A GeV beam energy as well as in semi-central C+C and Si+Si interactions at 40A GeV. Transverse mass spectra, rapidity spectra and total yields are determined as a function of centrality. The system-size and centrality dependence of relative strangeness production in nucleus-nucleus collisions at 40A GeV and 158A GeV beam energy are derived from the data presented here and published data for C+C and Si+Si collisions at 158A GeV beam energy. At both energies a steep increase with centrality is observed for small systems followed by a weak rise or even saturation for higher centralities. This behavior is compared to calculations using transport models (UrQMD and HSD), a percolation model and the core-corona approach.

T. Anticic; B. Baatar; D. Barna; J. Bartke; H. Beck; L. Betev; H. Bialkowska; C. Blume; M. Bogusz; B. Boimska; J. Book; M. Botje; P. Buncic; T. Cetner; P. Christakoglou; P. Chung; O. Chvala; J. G. Cramer; P. Dinkelaker; V. Eckardt; Z. Fodor; P. Foka; V. Friese; M. Gazdzicki; K. Grebieszkow; C. Hhne; K. Kadija; A. Karev; M. Kliemant; V. I. Kolesnikov; T. Kollegger; M. Kowalski; D. Kresan; A. Laszlo; R. Lacey; M. van Leeuwen; B. Lungwitz; M. Mackowiak; M. Makariev; A. I. Malakhov; M. Mateev; G. L. Melkumov; M. Mitrovski; St. Mrowczynski; V. Nicolic; G. Palla; A. D. Panagiotou; W. Peryt; J. Pluta; D. Prindle; F. Phlhofer; R. Renfordt; C. Roland; G. Roland; M. Rybczynski; 1 A. Rybicki; A. Sandoval; N. Schmitz; T. Schuster; P. Seyboth; F. Sikler; E. Skrzypczak; M. Slodkowski; G. Stefanek; R. Stock; H. Strbele; T. Susa; M. Szuba; M. Utvic; D. Varga; M. Vassiliou; G. I. Veres; G. Vesztergombi; D. Vranic; Z. Wlodarczyk; A. Wojtaszek-Szwarc

2012-07-02T23:59:59.000Z

348

Pp and p-barp elastic scattering at 53 GeV and the Chou-Yang model  

SciTech Connect (OSTI)

We analyze the pp and p-barp elastic scattering at ..sqrt..s = 53 GeV by means of the Chou-Yang model under the assumption that the hadronic form factors are energy-dependent.

Bellandi F., J.; Brunetto, S.Q.; Covolan, R.J.M.; Menon, M.J.; Pimentel, B.M.; Padua, A.B.

1987-03-01T23:59:59.000Z

349

Journal of Alloys and Compounds 425 (2006) 129139 A computational thermodynamic model of the MgAlGe system  

E-Print Network [OSTI]

­Al­Si system, which is widely used in aerospace and automotive industries. These studies show a great potential]. Moreover, aluminum mechanically alloyed with Mg and Ge exhibits improved super plastic elongation [3

Medraj, Mamoun

350

Precision measurements of $g_1$ of the proton and the deuteron with 6 GeV electrons  

E-Print Network [OSTI]

The inclusive polarized structure functions of the proton and deuteron, g1p and g1d, were measured with high statistical precision using polarized 6 GeV electrons incident on a polarized ammonia target in Hall B at Jefferson Laboratory. Electrons scattered at lab angles between 18 and 45 degrees were detected using the CEBAF Large Acceptance Spectrometer (CLAS). For the usual DIS kinematics, Q^2>1 GeV^2 and the final-state invariant mass W>2 GeV, the ratio of polarized to unpolarized structure functions g1/F1 is found to be nearly independent of Q^2 at fixed x. Significant resonant structure is apparent at values of W up to 2.3 GeV. In the framework of perturbative QCD, the high-W results can be used to better constrain the polarization of quarks and gluons in the nucleon, as well as high-twist contributions.

Y. Prok; P. Bosted; N. Kvaltine; K. P. Adhikari; D. Adikaram; M. Aghasyan; M. J. Amaryan; M. D. Anderson; S. Anefalos Pereira; H. Avakian; H. Baghdasaryan; J. Ball; N. A. Baltzell; M. Battaglieri; A. S. Biselli; J. Bono; W. J. Briscoe; J. Brock; W. K. Brooks; S. Bltmann; V. D. Burkert; C. Carlin; D. S. Carman; A. Celentano; S. Chandavar; L. Colaneri; P. L. Cole; M. Contalbrigo; O. Cortes; D. Crabb; V. Crede; A. D'Angelo; N. Dashyan; R. De Vita; E. De Sanctis; A. Deur; C. Djalali; G. E. Dodge; D. Doughty; R. Dupre; A. El Alaoui; L. El Fassi; L. Elouadrhiri; G. Fedotov; S. Fegan; R. Fersch; J. A. Fleming; T. A. Forest; M. Garcon; N. Gevorgyan; Y. Ghandilyan; G. P. Gilfoyle; F. X. Girod; K. L. Giovanetti; J. T. Goetz; W. Gohn; R. W. Gothe; K. A. Griffioen; B. Guegan; N. Guler; K. Haffidi; C. Hanretty; N. Harrison; M. Hattawy; K. Hicks; D. Ho; M. Holtrop; Y. Ilieva; D. G. Ireland; B. S. Ishkhanov; E. L. Isupov; S. Jawalkar; X. Jiang; H. S. Jo; K. Joo; N. Kalantarians; C. Keith; D. Keller; M. Khandaker; A. Kim; W. Kim; A. Klein; F. J. Klein; S. Koirala; V. Kubarovsky; S. E. Kuhn; S. V. Kuleshov; P. Lenisa; K. Livingston; H. Y. Lu; I . J. D. MacGregor; N. Markov; M. Mayee; B. McKinnon; D. Meekins; T. Mineeva; M. Mirazita; V. Mokeev; R. A. Montgomery; H. Moutarde; A Movsisyan; E. Munevar; C. Munoz Camacho; P. Nadel-Turonski; S. Niccolai; G. Niculescu; I. Niculescu; M. Osipenko; A. I. Ostrovidov; L. L. Pappalardo; R. Paremuzyan; K. Park; P. Peng; J. J. Phillips; J. Pierce; S. Pisano; O. Pogorelko; S. Pozdniakov; J. W. Price; S. Procureur; D. Protopopescu; A. J. R. Puckett; B. A. Raue; D. Rimal; M. Ripani; A. Rizzo; G. Rosner; P. Rossi; P. Roy; F. Sabati; M. S. Saini; C. Salgado; D. Schott; R. A. Schumacher; E. Seder; Y. G. Sharabian; A. Simonyan; C. Smith; G. Smith; D. I. Sober; D. Sokhan; S. S. Stepanyan; S. Stepanyan; I. I. Strakovsky; S. Strauch; V. Sytnik; M. Taiuti; W. Tang; S. Tkachenko; M. Ungaro; B . Vernarsky; A. V. Vlassov; H. Voskanyan; E. Voutier; N. K. Walford; D . P. Watts; L. B. Weinstein; N. Zachariou; L. Zana; J. Zhang; B. Zhao; Z. W. Zhao; I. Zonta; for the CLAS collaboration

2014-04-24T23:59:59.000Z

351

Precision measurements of g1 of the proton and the deuteron with 6 GeV electrons  

SciTech Connect (OSTI)

The inclusive polarized structure functions of the proton and deuteron, g1p and g1d, were measured with high statistical precision using polarized 6 GeV electrons incident on a polarized ammonia target in Hall B at Jefferson Laboratory. Electrons scattered at lab angles between 18 and 45 degrees were detected using the CEBAF Large Acceptance Spectrometer (CLAS). For the usual DIS kinematics, Q^2>1 GeV^2 and the final-state invariant mass W>2 GeV, the ratio of polarized to unpolarized structure functions g1/F1 is found to be nearly independent of Q^2 at fixed x. Significant resonant structure is apparent at values of W up to 2.3 GeV. In the framework of perturbative QCD, the high-W results can be used to better constrain the polarization of quarks and gluons in the nucleon, as well as high-twist contributions.

Prok, Yelena; Bosted, Peter; Kvaltine, Nicholas; Adhikari, Krishna; Adikaram-Mudiyanselage, Dasuni; Aghasyan, Mher; Amaryan, Moskov; Anderson, Mark; Anefalos Pereira, Sergio; Avagyan, Harutyun; Baghdasaryan, Hovhannes; Ball, Jacques; Baltzell, Nathan; Battaglieri, Marco; Biselli, Angela; Bono, Jason; Briscoe, William; Brock, Joseph; Brooks, William; Bueltmann, Stephen; Burkert, Volker; Carlin, Christopher; Carman, Daniel; Celentano, Andrea; Chandavar, Shloka; Colaneri, Luca; Cole, Philip; Contalbrigo, Marco; Cortes, Olga; Crabb, Donald; Crede, Volker; D'Angelo, Annalisa; Dashyan, Natalya; De Vita, Raffaella; De Sanctis, Enzo; Deur, Alexandre; Djalali, Chaden; Dodge, Gail; Doughty, David; Dupre, Raphael; El Alaoui, Ahmed; El Fassi, Lamiaa; Elouadrhiri, Latifa; Fedotov, Gleb; Fegan, Stuart; Fersch, Robert; Fleming, Jamie; Forest, Tony; Garcon, Michel; Gevorgyan, Nerses; Ghandilyan, Yeranuhi; Gilfoyle, Gerard; Girod-Gard, Francois-Xavier; Giovanetti, Kevin; Goetz, John; Gohn, Wesley; Gothe, Ralf; Griffioen, Keith; Guegan, Baptiste; Guler, Nevzat; Hafidi, Kawtar; Hanretty, Charles; Harrison, Nathan; Hattawy, Mohammad; Hicks, Kenneth; Ho, Dao; Holtrop, Maurik; Ilieva, Yordanka; Ireland, David; Ishkhanov, Boris; Isupov, Evgeny; Jawalkar, Sucheta; Jiang, Xiaodong; Jo, Hyon-Suk; Joo, Kyungseon; Kalantarians, Narbe; Keith, Christopher; Keller, Daniel; Khandaker, Mahbubul; Kim, Andrey; Kim, Wooyoung; Klein, Andreas; Klein, Franz; Koirala, Suman; Kubarovsky, Valery; Kuhn, Sebastian; Kuleshov, Sergey; Lenisa, Paolo; Livingston, Kenneth; Lu, Haiyun; MacGregor, Ian; Markov, Nikolai; Mayer, Michael; McKinnon, Bryan; Meekins, David; Mineeva, Taisiya; Mirazita, Marco; Mokeev, Viktor; Montgomery, Rachel; MOUTARDE, Herve; Movsisyan, Aram; Munevar Espitia, Edwin; Munoz Camacho, Carlos; Nadel-Turonski, Pawel; Niccolai, Silvia; Niculescu, Gabriel; Niculescu, Maria; Osipenko, Mikhail; Ostrovidov, Alexander; Pappalardo, Luciano; Paremuzyan, Rafayel; Park, K.; Peng, Peng; Phillips, J.J.; Pierce, Joshua; Pisano, Silvia; Pogorelko, Oleg; Pozdniakov, Serguei; Price, John; Procureur, Sebastien; Protopopescu, Dan; Puckett, Andrew; Raue, Brian; Rimal, Dipak; Ripani, Marco; Rizzo, Alessandro; Rosner, Guenther; Rossi, Patrizia; Roy, Priyashree; Sabatie, Franck; Saini, Mukesh; Salgado, Carlos; Schott, Diane; Schumacher, Reinhard; Seder, Erin; Sharabian, Youri; Simonyan, Ani; Smith, Claude; Smith, Gregory; Sober, Daniel; Sokhan, Daria; Stepanyan, Stepan; Stepanyan, Samuel; Strakovski, Igor; Strauch, Steffen; Sytnik, Valeriy; Taiuti, Mauro; Tang, Wei; Tkachenko, Svyatoslav; Ungaro, Maurizio; Vernarsky, Brian; Vlasov, Alexander; Voskanyan, Hakob; Voutier, Eric; Walford, Natalie; Watts, Daniel; Weinstein, Lawrence; Zachariou, Nicholas; Zana, Lorenzo; Zhang, Jixie; Zhao, Bo; Zhao, Zhiwen; Zonta, Irene

2014-08-01T23:59:59.000Z

352

SiGe receiver front ends and flip-chip integrated wideband antennas for millimeter-wave passive imaging  

E-Print Network [OSTI]

SiGe wideband 77-GHz and 94-GHz front end receivers with integrated antennas for passive imaging have been designed and characterized. These front end systems exhibit wideband performance with the highest gain and lowest ...

Powell, Johnna, 1980-

2009-01-01T23:59:59.000Z

353

High Speed Localized Cooling using SiGe Superlattice Microrefrigerators Yan Zhang, James Christofferson and Ali Shakouri  

E-Print Network [OSTI]

conductivity and T, absolute temperature. Coefficient of performance (COP) of thermoelectric modules, which is not compatible with standard microprocessor chips. The current smallest thermoelectric micro-modulesHigh Speed Localized Cooling using SiGe Superlattice Microrefrigerators Yan Zhang, James

354

Binder-free Ge-three dimensional graphene electrodes for high-rate capacity Li-ion batteries  

SciTech Connect (OSTI)

A binder-free, high-rate Ge-three dimensional (3D) graphene composite was synthesized by directly depositing Ge film atop 3D graphene grown by microwave plasma chemical vapor deposition on Ni substrate. The Ge-3D graphene structure demonstrates excellent electrochemical performance as a lithium ion battery (LIB) anode with a reversible capacity of 1140 mAh g{sup ?1} at 1/3C over 100 cycles and 835 mAh g{sup ?1} at 8C after 60 cycles, and significantly a discharge capacity of 186 mAh g{sup ?1} was still achieved at 32C. The high capacity and outstanding stability of the Ge-3D graphene composite propose it as a promising electrode in high-performance thin film LIBs.

Wang, C. D.; Chui, Y. S.; Chen, X. F., E-mail: xianfeng.chen@cityu.edu.hk, E-mail: apwjzh@cityu.edu.hk; Zhang, W. J., E-mail: xianfeng.chen@cityu.edu.hk, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Li, Y. [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China) [Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong (China); Department of Polymer Science and Engineering, Soochow University, Suzhou 215123 (China)

2013-12-16T23:59:59.000Z

355

Net charge fluctuations in Au+Au collisions at root s(NN)=130 GeV  

E-Print Network [OSTI]

We present the results of charged particle fluctuations measurements in Au+Au collisions at rootS(NN)=130 GeV using the STAR detector. Dynamical fluctuations measurements are presented for inclusive charged particle multiplicities as well...

Adams, J.; Adler, C.; Aggarwal, MM; Ahammed, Z.; Amonett, J.; Anderson, BD; Anderson, M.; Arkhipkin, D.; Averichev, GS; Badyal, SK; Balewski, J.; Barannikova, O.; Barnby, LS; Baudot, J.; Bekele, S.; Belaga, VV; Bellwied, R.; Berger, J.; Bezverkhny, BI; Bhardwaj, S.; Bhaskar, P.; Bhati, AK; Bichsel, H.; Billmeier, A.; Bland, LC; Blyth, CO; Bonner, BE; Botje, M.; Boucham, A.; Brandin, A.; Bravar, A.; Cadman, RV; Cai, XZ; Caines, H.; Sanchez, MCD; Cardenas, A.; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, HF; Chen, Y.; Chernenko, SP; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, JP; Cormier, TM; Cramer, JG; Crawford, HJ; Das, D.; Das, S.; Derevschikov, AA; Didenko, L.; Dietel, T.; Dong, X.; Draper, JE; Du, F.; Dubey, AK; Dunin, VB; Dunlop, JC; Majumdar, MRD; Eckardt, V.; Efimov, LG; Emelianov, V.; Elage, JE; Eppley, G.; Erazmus, B.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, KJ; Fu, J.; Gagliardi, Carl A.; Ganti, MS; Gutierrez, TD; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, E.; Ghazikhanian, V.; Ghosh, R.; Gonzalez, JE; Grachov, O.; Grigoriev, V.; Gronstal, S.; Grosnick, D.; Guedon, M.; Guertin, SM; Gupta, A.; Gushin, E.; Hallman, TJ; Hardtke, D.; Harris, JW; Heinz, M.; Henry, TW; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, GW; Horsley, M.; Huang, HZ; Huang, SL; Humanic, TJ; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, WW; Janik, M.; Johnson, I.; Jones, PG; Judd, EG; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, SR; Klyachko, A.; Koetke, DD; Kolleger, T.; Konstantmov, AS; Kopytine, M.; Kotchenda, L.; Kovalenko, AD; Kramer, M.; Kravtsov, P.; Krueger, K.; Kuhn, C.; Kulikov, AI; Kumar, A.; Kunde, GJ; Kunz, CL; Kutuev, RK; Kuznetsov, AA; Lamont, MAC; Landgraf, JM; Lange, S.; Lansdell, CP; Lasiuk, B.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Leontiev, VM; LeVine, MJ; Li, C.; Li, Q.; Lindenbatim, SJ; Lisa, MA; Liu, E.; Liu, L.; Liu, Z.; Liu, QJ; Ljubicic, T.; Llope, WJ; Long, H.; Longacre, RS; Lopez-Noriega, M.; Love, WA; Ludlam, T.; Lynn, D.; Ma, J.; Ma, YG; Maestro, D.; Mahajan, S.; Mangotra, LK; Mahapatra, DP; Majka, R.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Marx, J.; Matis, HS; Matulenko, YA; McShane, TS; Meissner, F.; Melnick, Y.; Meschanin, A.; Messer, M.; Miller, ML; Milosevich, Z.; Minaev, NG; Mironov, C.; Mishra, D.; Mitchell, J.; Mohanty, B.; Molnar, L.; Moore, CF; Mora-Corral, MJ; Morozov, V.; de Moura, MM; Munhoz, MG; Nandi, BK; Nayak, SK; Nayak, TK; Nelson, JM; Nevski, P.; Nikitin, VA; Nogach, LV; Norman, B.; Nurushev, SB; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Paic, G.; Pandey, SU; Pal, SK; Panebratsev, Y.; Panitkin, SY; Pavlinov, AI; Pawlak, T.; Perevoztchikov, V.; Peryt, W.; Petrov, VA; Phatak, SC; Picha, R.; Planinic, M.; Pluta, J.; Porile, N.; Porter, J.; Poskanzer, AM; Potekhin, M.; Potrebenikova, E.; Potukuchi, BVKS; Prindle, D.; Pruneau, C.; Putschke, J.; Rai, G.; Rakness, G.; Raniwala, R.; Raniwala, S.; Ravel, O.; Razin, SV; Reichhold, D.; Reid, JG; Renault, G.; Retiere, F.; Ridiger, A.; Ritter, HG; Roberts, JB; Rogachevski, OV; Romero, JL; Rose, A.; Roy, C.; Ruan, LJ; Rykov, V.; Sahoo, R.; Sakrejda, I.; Salur, S.; Sandweiss, J.; Savin, I.; Schambach, J.; Scharenberg, RP; Schmitz, N.; Schroeder, LS; Schweda, K.; Seger, J.; Seliverstov, D.; Seyboth, P.; Shahaliev, E.; Shao, M.; Sharma, M.; Shestermanov, KE; Shimanskii, SS; Singaraju, RN; Simon, F.; Skoro, G.; Smirnov, N.; Snellings, R.; Sood, G.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stanislaus, S.; Stock, R.; Stolpovsky, A.; Strikhanov, M.; Stringfellow, B.; Struck, C.; Suaide, AAP; Sugarbaker, E.; Suite, C.; Sumbera, M.; Surrow, B.; Symons, TJM; de Toledo, AS; Szarwas, P.; Tai, A.; Takahashi, J.; Tang, AH; Thein, D.; Thomas, JH; Tikhomirov, V.; Tokarev, M.; Tonjes, MB; Trentalange, S.; Tribble, Robert E.; Trivedi, MD; Trofimov, V.; Tsai, O.; Ullrich, T.; Underwood, DG; Van Buren, G.; VanderMolen, AM; Vasiliev, AN; Vasiliev, M.; Vigdor, SE; Viyogi, YP; Voloshin, SA; Waggoner, W.; Wang, F.; Wang, G.; Wang, XL; Wang, ZM; Ward, H.; Watson, JW; Wells, R.; Westfall, GD; Whitten, C.; Wieman, H.; Willson, R.; Wissink, SW; Witt, R.; Wood, J.; Wu, J.; Xu, N.; Xu, Z.; Xu, ZZ; Yakutin, AE; Yamamoto, E.; Yang, J.; Yepes, P.; Yurevich, VI; Zanevski, YV; Zborovsky, I.; Zhang, H.; Zhang, HY; Zhang, WM; Zhang, ZP; Zolnierczuk, PA; Zoulkarneev, R.; Zoulkarneeva, J.; Zubarev, AN; STAR Collaboration.

2003-01-01T23:59:59.000Z

356

Study of a-SiGe:H films and nip devices used in high efficiency triple junction solar cells  

E-Print Network [OSTI]

Study of a-SiGe:H films and n­i­p devices used in high efficiency triple junction solar cells-Si:H films). This allows the capture of the full range of the solar spectra in different layers and thus, North Guwahati, Guwahati 781 039, India Abstract We report our systematic studies on a-SiGe:H thin films

Deng, Xunming

357

The synthesis, single-crystal structure, optical absorption, and resistivity of Th{sub 2}GeSe{sub 5}  

SciTech Connect (OSTI)

The compound Th{sub 2}GeSe{sub 5} has been synthesized by the reaction of the elements at 1273 K. From a single-crystal study Th{sub 2}GeSe{sub 5} crystallizes in the Ba{sub 5}Si{sub 3} structure type with four formula units in the space group D{sup 8}{sub 4h}?P4/ncc of the tetragonal system in a cell with dimensions a=7.4968(4) and c=13.6302(9) at 100(2) K. From optical absorption measurements Th{sub 2}GeSe{sub 5} is found to have an optical band gap of 1.92 eV (indirect) or 1.98 eV (direct), consistent with its red color. Th{sub 2}GeSe{sub 5} is a wide gap semiconductor, as indicated by its electrical resistivity at 298 K of 4.37(2)10{sup 9} ? cm measured on a single crystal. - Graphical abstract: The structure of Th{sub 2}GeSe{sub 5}. Display Omitted - Highlights: The new compound Th{sub 2}GeSe{sub 5} was synthesized from the elements and recrystallized from Sb{sub 2}Se{sub 3}. Th{sub 2}GeSe{sub 5} crystallizes in the Ba{sub 5}Si{sub 3} structure type. The band gap of Th{sub 2}GeSe{sub 5} is1.92 eV and its resistivity shows it to be a wide gap semiconductor.

Koscielski, Lukasz A.; Malliakas, Christos D.; Sarjeant, Amy A.; Ibers, James A., E-mail: ibers@chem.northwestern.edu

2013-09-15T23:59:59.000Z

358

Accelerating Into the Future: From 0 to GeV in a Few Centimeters (LBNL Summer Lecture Series)  

ScienceCinema (OSTI)

Summer Lecture Series 2008: By exciting electric fields in plasma-based waveguides, lasers accelerate electrons in a fraction of the distance conventional accelerators require. The Accelerator and Fusion Research Division's LOASIS program, headed by Wim Leemans, has used 40-trillion-watt laser pulses to deliver billion-electron-volt (1 GeV) electron beams within centimeters. Leemans looks ahead to BELLA, 10-GeV accelerating modules that could power a future linear collider.

Leemans, Wim [LOASIS Program, AFRD

2011-04-28T23:59:59.000Z

359

Study of Gamma-Ray Bursts of energy E 10 GeV with the ARGO-YBJ detector  

E-Print Network [OSTI]

Study of Gamma-Ray Bursts of energy E 10 GeV with the ARGO-YBJ detector ARGO-YBJ Collaboration of high energy gamma-ray bursts can be performed by large area air shower arrays operating at very high is the study of gamma-ray bursts of energies E 10 GeV. This can be achieved using the "single particle

Morselli, Aldo

360

Nanostructured Ge{sub 2}Sb{sub 2}Te{sub 5} chalcogenide films produced by laser electrodispersion  

SciTech Connect (OSTI)

Amorphous nanostructured films of a complex chalcogenide (Ge{sub 2}Sb{sub 2}Te{sub 5}) are produced by laser electrodispersion and their structural and electrical properties are studied. It is found that the characteristic size of Ge{sub 2}Sb{sub 2}Te{sub 5} nanoparticles in the structure of the films is 1.55 nm.

Yavsin, D. A., E-mail: yavsin@mail.ioffe.ru; Kozhevin, V. M.; Gurevich, S. A.; Yakovlev, S. A.; Melekh, B. T.; Yagovkina, M. A.; Pevtsov, A. B. [Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)

2014-12-15T23:59:59.000Z

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361

Structural and Magnetothermal Properties of Compounds: Yb5SixGe4-x,Sm5SixGe4-x, EuO, and Eu3O4  

SciTech Connect (OSTI)

The family of R{sub 5}Si{sub x}Ge{sub 4-x} alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R{sub 5}Si{sub x}Ge{sub 4-x} systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R{sub 5}Si{sub x}Ge{sub 4-x} systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb{sub 5}Si{sub x}Ge{sub 4-x} and Sm{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys with 0 {le} x {le} 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R{sub 5}Si{sub x}Ge{sub 4-x} systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd{sub 5}Si{sub 4}-type structure. The magnetic properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} materials are nearly composition-independent, reflecting the persistence of the same crystal structure over the whole range of x from 0 to 4. Both the crystallographic and magnetic property data indicate that Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys are mixed valence systems, in which the majority (60%) of Yb atoms is divalent, while the minority (40%) is trivalent. This finding is supported by recent Moessbauer spectroscopy data.

Kyunghan Ahn

2007-05-09T23:59:59.000Z

362

Synthesis, structural characterization and properties of SrAl{sub 4?x}Ge{sub x}, BaAl{sub 4?x}Ge{sub x}, and EuAl{sub 4?x}Ge{sub x} (x?0.30.4)Rare examples of electron-rich phases with the BaAl{sub 4} structure type  

SciTech Connect (OSTI)

Three solid solutions with the general formula AEAl{sub 4?x}Ge{sub x} (AE=Eu, Sr, Ba; 0.32(1)?x?0.41(1)) have been synthesized via the aluminum self-flux method, and their crystal structures have been established from powder and single-crystal X-ray diffraction. They are isotypic and crystallize with the well-known BaAl{sub 4} structure type, adopted by the three AEAl{sub 4} end members. In all structures, Ge substitutes Al only at the 4e Wyckoff site. Results from X-rays photoelectron spectroscopy on EuAl{sub 4?x}Ge{sub x} and EuAl{sub 4} indicate that the interactions between the Eu{sup 2+} cations and the polyanionic framework are enhanced in the Ge-doped structure, despite the slightly elevated Fermi level. Magnetic susceptibility measurements confirm the local moment magnetism, expected for the [Xe]4f{sup 7} electronic configuration of Eu{sup 2+} and suggest strong ferromagnetic interactions at cryogenic temperatures. Resistivity data from single-crystalline samples show differences between the title compounds, implying different bonding characteristics despite the close Debye temperatures. A brief discussion on the observed electron count and homogeneity ranges for AEAl{sub 4?x}Ge{sub x} (AE=Eu, Sr, Ba) is also presented. - Graphical abstract: AEAl{sub 4?x}Ge{sub x} (AE=Eu, Sr, Ba; 0.32(1)?x?0.41(1)), three electron-rich phases with BaAl{sub 4} structure type have been synthesized and characterized. Display Omitted - Highlights: Three BaAl{sub 4}-type ternary aluminum germanides have been synthesized with Eu, Sr and Ba. Eu, Sr and Ba cations have no apparent influence on the solubility of Ge. The Ge atoms substitute Al on one of two framework sites, thereby strengthening the interactions between the cations and the polyanionic framework.

Zhang, Jiliang; Bobev, Svilen, E-mail: bobev@udel.edu

2013-09-15T23:59:59.000Z

363

Study of plutonium disposition using the GE Advanced Boiling Water Reactor (ABWR)  

SciTech Connect (OSTI)

The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the U.S. to disposition 50 to 100 metric tons of excess of plutonium in parallel with a similar program in Russia. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing long-term diversion resistance to this material. The NAS study {open_quotes}Management and Disposition of Excess Weapons Plutonium{close_quotes} identified light water reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a U.S. disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a 1350 MWe GE Advanced Boiling Water Reactor (ABWR) is utilized to convert the plutonium to spent fuel. The ABWR represents the integration of over 30 years of experience gained worldwide in the design, construction and operation of BWRs. It incorporates advanced features to enhance reliability and safety, minimize waste and reduce worker exposure. For example, the core is never uncovered nor is any operator action required for 72 hours after any design basis accident. Phase 1 of this study was documented in a GE report dated May 13, 1993. DOE`s Phase 1 evaluations cited the ABWR as a proven technical approach for the disposition of plutonium. This Phase 2 study addresses specific areas which the DOE authorized as appropriate for more in-depth evaluations. A separate report addresses the findings relative to the use of existing BWRs to achieve the same goal.

NONE

1994-04-30T23:59:59.000Z

364

Modeling of GE Appliances in GridLAB-D: Peak Demand Reduction  

SciTech Connect (OSTI)

The widespread adoption of demand response enabled appliances and thermostats can result in significant reduction to peak electrical demand and provide potential grid stabilization benefits. GE has developed a line of appliances that will have the capability of offering several levels of demand reduction actions based on information from the utility grid, often in the form of price. However due to a number of factors, including the number of demand response enabled appliances available at any given time, the reduction of diversity factor due to the synchronizing control signal, and the percentage of consumers who may override the utility signal, it can be difficult to predict the aggregate response of a large number of residences. The effects of these behaviors can be modeled and simulated in open-source software, GridLAB-D, including evaluation of appliance controls, improvement to current algorithms, and development of aggregate control methodologies. This report is the first in a series of three reports describing the potential of GE's demand response enabled appliances to provide benefits to the utility grid. The first report will describe the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The second and third reports will explore the potential of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation and the effects on volt-var control schemes.

Fuller, Jason C.; Vyakaranam, Bharat GNVSR; Prakash Kumar, Nirupama; Leistritz, Sean M.; Parker, Graham B.

2012-04-29T23:59:59.000Z

365

Young Pulsars and the Galactic Center GeV Gamma-ray Excess  

E-Print Network [OSTI]

Studies of Fermi data indicate an excess of GeV gamma rays around the Galactic center (GC), possibly due to dark matter. We show that young gamma-ray pulsars can yield a similar signal. First, a high concentration of GC supernovae naturally leads to a population of kicked pulsars symmetric about the GC. Second, while very-young pulsars with soft spectra reside near the Galactic plane, pulsars with spectra that have hardened with age accumulate at larger angles. This combination, including unresolved foreground pulsars, traces the morphology and spectrum of the Excess.

O'Leary, Ryan M; Kerr, Matthew; Dexter, Jason

2015-01-01T23:59:59.000Z

366

Partial-wave analyses of hadron scattering below 2 GeV  

SciTech Connect (OSTI)

The Center for Analysis of Particle Scattering (CAPS) in the Department of Physics at Virginia Polytechnic Institute and State University has analyzed basic two-body hadron reactions below 2 GeV for the last two decades. Reactions studied were nucleon-nucleon, pion-nucleon, K{sup +}-nucleon and pion photoproduction systems. In addition to analyses of these systems, a computer graphics system (SAID) has been developed and disseminated to over 250 research institutions using VAX computers. The computer-interactive system for disseminating information on basic scattering reactions is also accessible to the physics community through TELNET on the VPI SU physics department VAX. 6 refs.

Arndt, R.A.; Roper, L.D.

1991-01-01T23:59:59.000Z

367

Partial-wave analyses of hadron scattering below 2 GeV  

SciTech Connect (OSTI)

The Center for Analysis of Particle Scattering (CAPS) in the Department of Physics at Virginia Polytechnic Institute and State University has analyzed basic two-body hadron reactions below 2 GeV for the last two decades. Reactions studied were nucleon-nucleon, pion-nucleon, K[sup +]-nucleon and pion photoproduction systems. In addition to analyses of these reactions, a computer graphics system (SAID) has been developed and disseminated to over 250 research institutions using VAX computers. The computer-interactive system for disseminating information on basic scattering reactions is also accessible to the physics community through TELNET on the VPI SU physics department VAX.

Arndt, R.A.; Roper, L.D.

1992-01-01T23:59:59.000Z

368

Ge doped GaN with controllable high carrier concentration for plasmonic applications  

SciTech Connect (OSTI)

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4??10{sup 20} cm{sup ?3}. Low temperature luminescence spectra from the highly doped samples reveal band gap renormalization and band filling (Burstein-Moss shift) in addition to a sharp transition. Infrared ellipsometry spectra demonstrate the existence of electron plasma with an energy around 3500?cm{sup ?1} and a surface plasma with an energy around 2000?cm{sup ?1}. These findings open possibilities for the application of highly doped GaN for plasmonic devices.

Kirste, Ronny; Hoffmann, Marc P.; Sachet, Edward; Bobea, Milena; Bryan, Zachary; Bryan, Isaac; Maria, Jon-Paul; Collazo, Ramn; Sitar, Zlatko [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States)] [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919 (United States); Nenstiel, Christian; Hoffmann, Axel [Institut f?r Festkrperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)] [Institut f?r Festkrperphsyik, TU-Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)

2013-12-09T23:59:59.000Z

369

Mechanism of stress relaxation in Ge nanocrystals embedded in SiO2  

SciTech Connect (OSTI)

Ion-beam-synthesized {sup 74}Ge nanocrystals embedded in an amorphous silica matrix exhibit large compressive stresses in the as-grown state. The compressive stress is determined quantitatively by evaluating the Raman line shift referenced to the line position of free-standing nanocrystals. Post-growth thermal treatments lead to stress reduction. The stress relief process is shown to be governed by the diffusive flux of matrix atoms away from the local nanocrystal growth region. A theoretical model that quantitatively describes this process is presented.

Sharp, I.D.; Yi, D.O.; Xu, Q.; Liao, C.Y.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan, D.C.; Haller, E.E.

2004-08-30T23:59:59.000Z

370

Nano-electron beam induced current and hole charge dynamics through uncapped Ge nanocrystals  

SciTech Connect (OSTI)

Dynamics of hole storage in spherical Ge nanocrystals (NCs) formed by a two step dewetting/nucleation process on an oxide layer grown on an n-doped <001> silicon substrate is studied using a nano-electron beam induced current technique. Carrier generation is produced by an electron beam irradiation. The generated current is collected by an atomic force microscope--tip in contact mode at a fixed position away from the beam spot of about 0.5 {mu}m. This distance represents the effective diffusion length of holes. The time constants of holes charging are determined and the effect of the NC size is underlined.

Marchand, A.; El Hdiy, A.; Troyon, M. [Laboratoire de Recherche en Nanosciences, Bat. 6, case no 15, UFR Sciences, Universite de Reims Champagne Ardenne, 51687 Reims Cedex 2 (France); Amiard, G.; Ronda, A.; Berbezier, I. [IM2NP, Faculte des Sciences et Techniques, Campus de Saint Jerome - Case 142, Avenue Escadrille Normandie Niemen, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

371

Network Rigidity in GeSe2 Glass at High Pressure  

SciTech Connect (OSTI)

Acoustic measurements using synchrotron radiation have been performed on glassy GeSe2 up to pressures of 9.6 GPa. A minimum observed in the shear-wave velocity, associated anomalous behavior in Poisson's ratio, and discontinuities in elastic moduli at 4 GPa are indicative of a gradual structural transition in the glass. This is attributed to a network rigidity minimum originating from a competition between two densification mechanisms. At pressures up to 3 GPa, a conversion from edge- to corner-sharing tetrahedra results in a more flexible network. This is contrasted by a gradual increase in coordination number with pressure, which leads to an overall stiffening of the glass.

Antao,S.; Benmore , C.; Li, B.; Wang, L.; Bychkov, E.; Parise, J.

2008-01-01T23:59:59.000Z

372

SiGe quantum dots for fast hole spin Rabi oscillations  

SciTech Connect (OSTI)

We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100?MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.

Ares, N.; Prager, A.; De Franceschi, S. [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)] [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Katsaros, G. [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France) [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Johannes Kepler University, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, 4040 Linz (Austria); Golovach, V. N. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Centro de Fsica de Materiales CFM/MPC (CSIC-UPV/EHU) and Donostia International Physics Center DIPC, E-20018 San Sebastin (Spain); IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao (Spain); Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)] [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Glazman, L. I. [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

2013-12-23T23:59:59.000Z

373

Lambda Hyperons in 2 A*GeV Ni + Cu Collisions  

E-Print Network [OSTI]

A sample of Lambda's produced in 2 A*GeV Ni + Cu collisions has been obtained with the EOS Time Projection Chamber at the Bevalac. Low background in the invariant mass distribution allows for the unambiguous demonstration of Lambda directed flow. The transverse mass spectrum at mid-rapidity has the characteristic shoulder-arm shape of particles undergoing radial transverse expansion. A linear dependence of Lambda multiplicity on impact parameter is observed, from which a total Lambda + Sigma^0 production cross section of $112 +/- 24 mb is deduced. Detailed comparisons with the ARC and RVUU models are made.

EOS Collaboration; M. Justice; S. Albergo; F. Bieser; F. P. Brady; Z. Caccia; D. A. Cebra; A. D. Chacon; J. L. Chance; Y. Choi; S. Costa; J. B. Elliott; M. L. Gilkes; J. A. Hauger; A. S. Hirsch; E. L. Hjort; A. Insolia; D. Keane; J. C. Kintner; M. A. Lisa; H. Liu; H. S. Matis; R. McGrath; M. McMahan; C. McParland; D. L. Olson; M. D. Partlan; N. T. Porile; R. Potenza; G. Rai; J. O. Rasmussen; H. G. Ritter; J. Romanski; J. L. Romero; G. V. Russo; R. P. Scharenberg; A. Scott; Y. Shao; B. K. Srivastava; T. J. M. Symons; M. Tincknell; C. Tuve; S. Wang; P. G. Warren; D. Weerasundara; H. H. Wieman; T. Wienold; K. Wolf

1998-09-09T23:59:59.000Z

374

Application of JLab 12GeV helium refrigeration system for the FRIB accelerator at MSU  

SciTech Connect (OSTI)

The planned approach to have a turnkey helium refrigeration system for the MSU-FRIB accelerator system, encompassing the design, fabrication, installation and commissioning of the 4.5-K refrigerator cold box(es), cold compression system, warm compression system, gas management, oil removal and utility/ancillary systems, was found to be cost prohibitive. Following JLabs suggestion, MSU-FRIB accelerator management made a formal request to evaluate the applicability of the recently designed 12GeV JLab cryogenic system for this application. The following paper will outline the findings and the planned approach for the FRIB helium refrigeration system.

Ganni, V.; Knudsen, P.; Arenius, D. [Thomas Jefferson National Accelerator Facility, Newport News, VA 23606 (United States); Casagrande, F. [MSU-FRIB, East Lansing, MI 48824 (United States)

2014-01-29T23:59:59.000Z

375

Recirculating Beam Breakup Study for the 12 GeV Upgrade at Jefferson Lab  

SciTech Connect (OSTI)

Two new high gradient C100 cryomodules with a total of 16 new cavities were installed at the end of the CEBAF south linac during the 2011 summer shutdown as part of the 12-GeV upgrade project at Jefferson Lab. We surveyed the higher order modes (HOMs) of these cavities in the Jefferson Lab cryomodule test facility and CEBAF tunnel. We then studied recirculating beam breakup (BBU) in November 2011 to evaluate CEBAF low energy performance, measure transport optics, and evaluate BBU thresholds due to these HOMs. This paper discusses the experiment setup, cavity measurements, machine setup, optics measurements, and lower bounds on BBU thresholds by new cryomodules.

Ilkyoung Shin, Todd Satogata, Shahid Ahmed, Slawomir Bogacz, Mircea Stirbet, Haipeng Wang, Yan Wang, Byung Yunn, Ryan Bodenstein

2012-07-01T23:59:59.000Z

376

Vibration Response Testing of the CEBAF 12GeV Upgrade Cryomodules  

SciTech Connect (OSTI)

The CEBAF 12 GeV upgrade project includes 80 new 7-cell cavities to form 10 cryomodules. These cryomodules were tested during production to characterize their microphonic response in situ. For several early cryomodules, detailed (vibration) modal studies of the cryomodule string were performed during the assembly process to identify the structural contributors to the measured cryomodule microphonic response. Structural modifications were then modelled, implemented, and verified by subsequent modal testing and in-situ microphonic response testing. Interim and latest results from this multi-stage process will be reviewed.

Davis, G. Kirk; Matalevich, Joseph R.; Wiseman, Mark A.; Powers, Thomas J.

2012-09-01T23:59:59.000Z

377

Production of very neutron-rich nuclei with a 76Ge beam  

E-Print Network [OSTI]

Production cross sections for neutron-rich nuclei from the fragmentation of a 76Ge beam at 132 MeV/u were measured. The longitudinal momentum distributions of 34 neutron-rich isotopes of elements 13 Production cross sections with beryllium and tungsten targets were determined for a large number of nuclei including 15 isotopes first observed in this work. These are the most neutron-rich nuclides of the elements 17 production cross sections based on thermal evaporation from excited prefragments. Some of the fragments near 58Ca show anomalously large production cross sections.

O. B. Tarasov; M. Portillo; A. M. Amthor; T. Baumann; D. Bazin; A. Gade; T. N. Ginter; M. Hausmann; N. Inabe; T. Kubo; D. J. Morrissey; A. Nettleton; J. Pereira; B. M. Sherrill; A. Stolz; M. Thoennessen

2009-08-26T23:59:59.000Z

378

Precision nuclear targets for Drell-Yan cross section measurements at 800 GeV  

SciTech Connect (OSTI)

Targets of iron, tungsten, carbon, and calcium of areal densities 2.3 to 5.8 g/cm/sup 2/ were fabricated to high precision for a fixed-target experiment performed in 1988 at Fermilab to measure relative Drell-Yan cross sections. The experiment used 800-GeV protons at an intensity of 2 x 10/sup 12/ protons per 23-second spill. Areal densities were determined to an accuracy of approximately 1 part in 10/sup 4/. The calcium targets were vacuum-encapsulated in stainless steel by electron-beam welding. 1 ref., 5 figs., 4 tabs.

Gursky, J.C.; Baer, H.; Flick, F.F.; Gallegos, D.

1988-01-01T23:59:59.000Z

379

Prediction of narrow $N^{*}$ and $?^*$ resonances with hidden charm above 4 GeV  

E-Print Network [OSTI]

The interaction between various charmed mesons and charmed baryons are studied within the framework of the coupled channel unitary approach with the local hidden gauge formalism. Several meson-baryon dynamically generated narrow $N^*$ and $\\Lambda^*$ resonances with hidden charm are predicted with mass above 4 GeV and width smaller than 100 MeV. The predicted new resonances definitely cannot be accommodated by quark models with three constituent quarks and can be looked for at the forthcoming PANDA/FAIR experiments.

Jia-Jun Wu; R. Molina; E. Oset; B. S. Zou

2010-07-04T23:59:59.000Z

380

SPIN Effects, QCD, and Jefferson Laboratory with 12 GeV electrons  

SciTech Connect (OSTI)

QCD and Spin physics are playing important role in our understanding of hadron structure. I will give a short overview of origin of hadron structure in QCD and highlight modern understanding of the subject. Jefferson Laboratory is undergoing an upgrade that will increase the energy of electron beam up to 12 GeV. JLab is one of the leading facilities in nuclear physics studies and once operational in 2015 JLab 12 will be crucial for future of nuclear physics. I will briefly discuss future studies in four experimental halls of Jefferson Lab.

Prokudin, Alexey [JLAB

2013-11-01T23:59:59.000Z

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381

Heating {sup 197}Au nuclei with 8 GeV antiproton and {pi}- beams.  

SciTech Connect (OSTI)

This contribution stresses results recently obtained from experiment E900 performed at the Brookhaven AGS accelerator with 8 GeV/c antiproton and negative pion beams using the Indiana Silicon Sphere detector array. An investigation of the reaction mechanism is presented, along with source characteristics deduced from a two-component fit to the spectra. An enhancement of deposition energy with the antiproton beam with respect to the pion beam is observed. The results are qualitatively consistent with predictions of an intranuclear cascade code.

Back, B.; Beaulieu, L.; Breuer, H.; Gushue, S.; Hsi, W.-C.; Korteling, R. G.; Kwiatkowski, K.; Laforest, R.; Lefort, T.; Martin, E.; Pienkowski, L.; Ramakrishnan, E.; Remsberg, L. P.; Viola, V. E.

1999-05-03T23:59:59.000Z

382

Search for flow in the reaction Ar + Pb. [0. 8 GeV/u  

SciTech Connect (OSTI)

Interactions between Ar projectiles and lead are studied in terms of global observables. The Streamer Chamber at the Berkeley BEVALAC was used to record all charged particles produced in collisions between 0.8 GeV/u Ar projectiles with a Pb/sub 3/O/sub 4/ target. A hardware trigger selected central collisions with Pb nuclei corresponding to a trigger cross section of 1 barn. In a geometrical picture this is equivalent to an impact parameter range of 0 to 5 fm.

Renfordt, R.E.; Brockmann, R.; Harris, J.W.; Maier, M.; Riess, F.; Sandoval, A.; Stock, R.; Stroebele, H.; Wolf, K.L.; Pugh, H.G.

1983-08-01T23:59:59.000Z

383

Pion Electromagnetic Form Factor up to 10 [GeV/]^2  

E-Print Network [OSTI]

The light-front approach is applied to calculate the electromagnetic current for quark-antiquark bound states for the pion. The pion electromagnetic form factor is obtnaide from the "+" and "-" components of the electromagnetic current in the Drell-Yan frame, with different models of the pi-q\\bar{q} vertex and the results for the pion electromagnetic form factor are compared with the experimental data up to 10 [GeV/c]^2 and anothers hadronic models. The rotational symmetry propreties of the pion electromagnetic current related with the zero-modes in the light-front are investigate.

J. P. B. C. de Melo

2005-07-26T23:59:59.000Z

384

Pion femtoscopy in p+p collisions at sqrt(s)=200 GeV  

E-Print Network [OSTI]

The STAR Collaboration at RHIC has measured two-pion correlation functions from p+p collisions at sqrt(s)=200 GeV. Spatial scales are extracted via a femtoscopic analysis of the correlations, though this analysis is complicated by the presence of strong non-femtoscopic effects. Our results are put into the context of the world dataset of femtoscopy in hadron-hadron collisions. We present the first direct comparison of femtoscopy in p+p and heavy ion collisions, under identical analysis and detector conditions.

M. M. Aggarwal; Z. Ahammed; A. V. Alakhverdyants; I. Alekseev; J. Alford; B. D. Anderson; D. Arkhipkin; G. S. Averichev; J. Balewski; L. S. Barnby; S. Baumgart; D. R. Beavis; R. Bellwied; M. J. Betancourt; R. R. Betts; A. Bhasin; A. K. Bhati; H. Bichsel; J. Bielcik; J. Bielcikova; B. Biritz; L. C. Bland; 3 B. E. Bonner; J. Bouchet; E. Braidot; A. V. Brandin; A. Bridgeman; E. Bruna; S. Bueltmann; I. Bunzarov; T. P. Burton; X. Z. Cai; H. Caines; M. Caldern de la Barca Snchez; O. Catu; D. Cebra; R. Cendejas; M. C. Cervantes; Z. Chajecki; P. Chaloupka; S. Chattopadhyay; H. F. Chen; J. H. Chen; J. Y. Chen; J. Cheng; M. Cherney; A. Chikanian; K. E. Choi; W. Christie; P. Chung; R. F. Clarke; M. J. M. Codrington; R. Corliss; J. G. Cramer; H. J. Crawford; D. Das; S. Dash; A. Davila Leyva; L. C. De Silva; R. R. Debbe; T. G. Dedovich; A. A. Derevschikov; R. Derradi de Souza; L. Didenko; P. Djawotho; S. M. Dogra; X. Dong; J. L. Drachenberg; J. E. Draper; J. C. Dunlop; M. R. Dutta Mazumdar; L. G. Efimov; E. Elhalhuli; M. Elnimr; J. Engelage; G. Eppley; B. Erazmus; M. Estienne; L. Eun; O. Evdokimov; P. Fachini; R. Fatemi; J. Fedorisin; R. G. Fersch; P. Filip; E. Finch; V. Fine; Y. Fisyak; C. A. Gagliardi; D. R. Gangadharan; M. S. Ganti; E. J. Garcia-Solis; A. Geromitsos; F. Geurts; V. Ghazikhanian; P. Ghosh; Y. N. Gorbunov; A. Gordon; O. Grebenyuk; D. Grosnick; S. M. Guertin; A. Gupta; N. Gupta; W. Guryn; B. Haag; A. Hamed; L-X. Han; J. W. Harris; J. P. Hays-Wehle; M. Heinz; S. Heppelmann; A. Hirsch; E. Hjort; A. M. Hoffman; G. W. Hoffmann; D. J. Hofman; B. Huang; H. Z. Huang; T. J. Humanic; L. Huo; G. Igo; P. Jacobs; W. W. Jacobs; C. Jena; F. Jin; C. L. Jones; P. G. Jones; J. Joseph; E. G. Judd; S. Kabana; K. Kajimoto; K. Kang; J. Kapitan; K. Kauder; D. Keane; A. Kechechyan; D. Kettler; D. P. Kikola; J. Kiryluk; A. Kisiel; S. R. Klein; A. G. Knospe; A. Kocoloski; D. D. Koetke; T. Kollegger; J. Konzer; I. Koralt; L. Koroleva; W. Korsch; L. Kotchenda; V. Kouchpil; P. Kravtsov; K. Krueger; M. Krus; L. Kumar; P. Kurnadi; M. A. C. Lamont; J. M. Landgraf; S. LaPointe; J. Lauret; A. Lebedev; R. Lednicky; C-H. Lee; J. H. Lee; W. Leight; M. J. LeVine; C. Li; L. Li; N. Li; W. Li; X. Li; X. Li; Y. Li; Z. M. Li; G. Lin; S. J. Lindenbaum; M. A. Lisa; F. Liu; H. Liu; J. Liu; T. Ljubicic; W. J. Llope; R. S. Longacre; W. A. Love; Y. Lu; E. V. Lukashov; X. Luo; G. L. Ma; Y. G. Ma; D. P. Mahapatra; R. Majka; O. I. Mall; L. K. Mangotra; R. Manweiler; S. Margetis; C. Markert; H. Masui; H. S. Matis; Yu. A. Matulenko; D. McDonald; T. S. McShane; A. Meschanin; R. Milner; N. G. Minaev; S. Mioduszewski; A. Mischke; M. K. Mitrovski; B. Mohanty; M. M. Mondal. B. Morozov; D. A. Morozov; M. G. Munhoz; B. K. Nandi; C. Nattrass; T. K. Nayak; J. M. Nelson; P. K. Netrakanti; M. J. Ng; L. V. Nogach; S. B. Nurushev; G. Odyniec; A. Ogawa; V. Okorokov; E. W. Oldag; D. Olson; M. Pachr; B. S. Page; S. K. Pal; Y. Pandit; Y. Panebratsev; T. Pawlak; T. Peitzmann; V. Perevoztchikov; C. Perkins; W. Peryt; S. C. Phatak; P. Pile; M. Planinic; M. A. Ploskon; J. Pluta; D. Plyku; N. Poljak; A. M. Poskanzer; B. V. K. S. Potukuchi; C. B. Powell; D. Prindle; C. Pruneau; N. K. Pruthi; P. R. Pujahari; J. Putschke; H. Qiu; R. Raniwala; S. Raniwala; R. L. Ray; R. Redwine; R. Reed; H. G. Ritter; J. B. Roberts; O. V. Rogachevsky; J. L. Romero; A. Rose; C. Roy; L. Ruan; R. Sahoo; S. Sakai; I. Sakrejda; T. Sakuma; S. Salur; J. Sandweiss; E. Sangaline; J. Schambach; R. P. Scharenberg; N. Schmitz; T. R. Schuster; J. Seele; J. Seger; I. Selyuzhenkov; P. Seyboth; E. Shahaliev; M. Shao; M. Sharma; S. S. Shi; E. P. Sichtermann; F. Simon; R. N. Singaraju; M. J. Skoby; N. Smirnov; P. Sorensen; J. Sowinski; H. M. Spinka; B. Srivastava; T. D. S. Stanislaus; D. Staszak; J. R. Stevens; R. Stock; M. Strikhanov; B. Stringfellow; A. A. P. Suaide; M. C. Suarez; N. L. Subba; M. Sumbera; X. M. Sun; Y. Sun; Z. Sun; B. Surrow; D. N. Svirida; T. J. M. Symons; A. Szanto de Toledo; J. Takahashi; A. H. Tang; Z. Tang; L. H. Tarini; T. Tarnowsky; D. Thein; J. H. Thomas; J. Tian; A. R. Timmins; S. Timoshenko; D. Tlusty; M. Tokarev; V. N. Tram; S. Trentalange; R. E. Tribble; O. D. Tsai; J. Ulery; T. Ullrich; D. G. Underwood; G. Van Buren; M. van Leeuwen; G. van Nieuwenhuizen; J. A. Vanfossen, Jr.; R. Varma; G. M. S. Vasconcelos; A. N. Vasiliev; F. Videbaek; Y. P. Viyogi; S. Vokal; S. A. Voloshin; M. Wada; M. Walker; F. Wang; G. Wang; H. Wang; J. S. Wang; Q. Wang; X. L. Wang; Y. Wang; G. Webb; J. C. Webb; G. D. Westfall; C. Whitten Jr.; H. Wieman; S. W. Wissink; R. Witt; Y. F. Wu; W. Xie; H. Xu; N. Xu; Q. H. Xu; W. Xu; Y. Xu; Z. Xu; L. Xue; Y. Yang; P. Yepes; K. Yip; I-K. Yoo; Q. Yue; M. Zawisza; H. Zbroszczyk; W. Zhan; J. B. Zhang; S. Zhang; W. M. Zhang; X. P. Zhang; Y. Zhang; Z. P. Zhang; J. Zhao; C. Zhong; J. Zhou; W. Zhou; X. Zhu; Y. H. Zhu; R. Zoulkarneev

2011-09-22T23:59:59.000Z

385

How a Minecraft book got noticed on Amazon | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr FlickrGuidedCH2MLLC HistoryVeterans |VirtualLove BeGE engineer uses

386

New Global Oil & Gas Hub in Oklahoma City | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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387

GE-Prolec CCE Meeting October 19,2010 | Department of Energy  

Office of Environmental Management (EM)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May Jun Jul(Summary) "of Energy Power.pdf11-161-LNG | Department of Energy Freeport LNGEnergy ResearchofDepartmentGE-Prolec

388

Technology makes reds "pop" in LED displays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsrucLas ConchasPassiveSubmittedStatus TomAboutManusScience and How To License ORNLTechnologyGE

389

({lambda}, p) Spectrum Analysis in p+A Interactions at 10 GeV/c  

SciTech Connect (OSTI)

Experimental data from the 2m propane bubble chamber have been analyzed for exotic baryon states search. A number of peculiarities were found in the effective mass spectra of: {lambda}{pi}+({sigma}*+(1382),PDG), {lambda}p and {lambda}pp subsystems. A few events detected on the photographs of the propane bubble chamber exposed to a 10 GeV/c proton beam, were interpreted as S=-2 H0 light(

Aslanyan, P. Zh. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Yerevan State of University (Russian Federation); Emelyanenko, V. N. [Joint Institute for Nuclear Research, Dubna (Russian Federation)

2007-06-13T23:59:59.000Z

390

Mid infrared optical properties of Ge/Si quantum dots with different doping level  

SciTech Connect (OSTI)

Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya. [St. Petersburg State Polytechnic University, Polytechnicheskaya str. 29, St. Petersburg (Russian Federation); Tonkikh, A. A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Danilov, S. N. [University of Regensburg, Regensburg (Germany)

2013-12-04T23:59:59.000Z

391

Production of very neutron-rich nuclei with a 76Ge beam  

E-Print Network [OSTI]

Production cross sections for neutron-rich nuclei from the fragmentation of a 76Ge beam at 132 MeV/u were measured. The longitudinal momentum distributions of 34 neutron-rich isotopes of elements 13 Production cross sections with beryllium and tungsten targets were determined for a large number of nuclei including 15 isotopes first observed in this work. These are the most neutron-rich nuclides of the elements 17 production cross sections based on thermal evaporation from excited prefragments. Some of the fragments near 58Ca show anomalously large production cross sections.

Tarasov, O B; Amthor, A M; Baumann, T; Bazin, D; Gade, A; Ginter, T N; Hausmann, M; Inabe, N; Kubo, T; Morrissey, D J; Nettleton, A; Pereira, J; Sherrill, B M; Stolz, A; Thoennessen, M

2009-01-01T23:59:59.000Z

392

$?$ meson reconstruction in pp reactions at 2.2 GeV with HADES  

E-Print Network [OSTI]

The HADES spectrometer installed at GSI Darmstadt is devoted to study the production of di-electron pairs from proton, pion and nucleus induced reactions at 1-2 AGeV. In pp collisions at 2.2 GeV we have focused mainly on exclusive reconstruction of the $\\eta$ meson decays in the hadronic ($\\eta\\to\\pi^{+}\\pi^{-}\\pi^{0}$) and the electromagnetic channels ($\\eta\\to e^{+}e^{-}\\gamma$). We present analysis techniques and discuss first results on $\\eta$ production, with the main focus on comparisons of reconstructed distributions to results obtained by other experiments and theoretical predictions.

S. Spataro; for the HADES Collaboration

2006-10-12T23:59:59.000Z

393

$\\eta$ meson reconstruction in pp reactions at 2.2 GeV with HADES  

E-Print Network [OSTI]

The HADES spectrometer installed at GSI Darmstadt is devoted to study the production of di-electron pairs from proton, pion and nucleus induced reactions at 1-2 AGeV. In pp collisions at 2.2 GeV we have focused mainly on exclusive reconstruction of the $\\eta$ meson decays in the hadronic ($\\eta\\to\\pi^{+}\\pi^{-}\\pi^{0}$) and the electromagnetic channels ($\\eta\\to e^{+}e^{-}\\gamma$). We present analysis techniques and discuss first results on $\\eta$ production, with the main focus on comparisons of reconstructed distributions to results obtained by other experiments and theoretical predictions.

Spataro, S

2007-01-01T23:59:59.000Z

394

Investigation of high temperature gaseous species by Knudsen cell mass spectrometry above the condensed systems Au-Ge-Cu and Au-Si / by Joseph Edward Kingcade  

E-Print Network [OSTI]

0), in kJ mol for the Gaseous Molecules AuSi, Ie 24 27 3l 34 TABLE 12. 13. 14. 15. 1 6. 17a 18. 19. 20. 21. 22. 23. Au2Si, AuSi2, CuGe and CuGe2 . . . . . . . . . . . . . . . Summary of Enthalpy Changes: for the Molecule Au..., (HT-H ), in kJ mol for the Gaseous T o Molecules Au2Ge2, AuGe3 and AuGe4 MOLECULE AND STRUCTURE 298 1200 1400 1600 TEMPERATURE ( K) 1800 2000 2200 hu2 Ge2 (Linear) Au2 Gep (Square Planar) FEF HCF FEF HCF 297. 7 18. 69 317. 1 18. 83...

Kingcade, Joseph Edward

2012-06-07T23:59:59.000Z

395

Structural investigation on Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses using x-ray photoelectron spectra  

SciTech Connect (OSTI)

The structure of Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses (x?=?7.5, 10, 15, 20, 25, 27.5, 30, and 32.5 at. %) has been investigated by x-ray photoelectron spectroscopy (XPS). Different structural units have been extracted and characterized by decomposing XPS core level spectra, the evolution of the relative concentration of each structural unit indicates that, the relative contributions of Se-trimers and Se-Se-Ge(Sb) structure decrease with increasing Ge content until they become zero at chemically stoichiometric glasses of Ge{sub 25}Sb{sub 10}Se{sub 65}, and then the homopolar bonds like Ge-Ge and Sb-Sb begin to appear in the spectra. Increase of homopolar bonds will extend band-tails into the gap and narrow the optical band gap. Thus, the glass with a stoichiometric composition generally has fewer defective bonds and larger optical bandgap.

Wei, Wen-Hou [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Xiang, Shen [College of Information Science and Engineering, Ningbo University, Ningbo 315211 (China); Xu, Si-Wei; Wang, Rong-Ping, E-mail: rongping.wang@anu.edu.au [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang [Department of Applied Physics, Chongqing University, Chongqing 401331 (China)

2014-05-14T23:59:59.000Z

396

Energy dependence of pi, p and pbar transverse momentum spectra for Au+Au collisions at sqrt sNN = 62.4 and 200 GeV  

SciTech Connect (OSTI)

We study the energy dependence of the transverse momentum (pT) spectra for charged pions, protons and anti-protons for Au+Au collisions at sqrt sNN = 62.4 and 200 GeV. Data are presented at mid-rapidity (lbar y rbar< 0.5) for 0.2< pT< 12 GeV/c. In the intermediate pT region (2< pT< 6 GeV/c), the nuclear modification factor is higher at 62.4 GeV than at 200 GeV, while at higher pT (pT> 7 GeV/c) the modification is similar for both energies. The p/pi+ and pbar/pi- ratios for central collisions at sqrt sNN = 62.4 GeV peak at pT _~;; 2 GeV/c. In the pT range where recombination is expected to dominate, the p/pi+ ratios at 62.4 GeV are larger than at 200 GeV, while the pbar/pi- ratios are smaller. For pT> 2 GeV/c, the pbar/pi- ratios at the two beam energies are independent of pT and centrality indicating that the dependence of the pbar/pi- ratio on pT does not change between 62.4 and 200 GeV. These findings challenge various models incorporating jet quenching and/or constituent quark coalescence.

Ritter, H

2007-03-26T23:59:59.000Z

397

K* production in Cu+Cu and Au+Au collisions at sqrt(s_{NN}) = 62.4 GeV and 200 GeV in STAR  

E-Print Network [OSTI]

We report the measurements of $p_T$ spectra of $K^*$ up to intermediate $p_T$ region in mid-rapidity through its hadronic decay channel using the STAR detector in Au+Au and Cu+Cu collisions at $\\sqrt{s_{\\mathrm{NN}}}$= 62.4 GeV and 200 GeV. Particle ratios such as $K^{*}/K$ and $K^{*}/\\phi$ is used to understand the rescattering and regeneration effect on $K^{*}$ production in the hadronic medium. The $K^*$ $v_{2}$ measurement using a high statistics Au+Au 200 GeV dataset and nuclear modification factor measurement supports the quark coalescence model of particle production in the intermediate $p_T$ range.

Sadhana Dash; for the STAR Collaboration

2008-05-01T23:59:59.000Z

398

Ge-related faceting and segregation during the growth of metastable (GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers by metal{endash}organic vapor-phase epitaxy  

SciTech Connect (OSTI)

(GaAs){sub 1{minus}x}(Ge{sub 2}){sub x} alloy layers, 0{lt}x{lt}0.22, have been grown by metal{endash}organic vapor-phase epitaxy on vicinal (001) GaAs substrates. Transmission electron microscopy revealed pronounced phase separation in these layers, resulting in regions of GaAs-rich zinc-blende and Ge-rich diamond cubic material that appears to lead to substantial band-gap narrowing. For x=0.1 layers, the phase-separated microstructure consisted of intersecting sheets of Ge-rich material on {l_brace}115{r_brace}B planes surrounding cells of GaAs-rich material, with little evidence of antiphase boundaries. Atomic force microscopy revealed {l_brace}115{r_brace}B surface faceting associated with the phase separation. {copyright} {ital 1999 American Institute of Physics.}

Norman, A.G.; Olson, J.M.; Geisz, J.F.; Moutinho, H.R.; Mason, A.; Al-Jassim, M.M. [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States); Vernon, S.M. [Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730 (United States)] [Spire Corporation, One Patriots Park, Bedford, Massachusetts 01730 (United States)

1999-03-01T23:59:59.000Z

399

Multiwavelength observations of GRB 110731A: GeV emission from onset to afterglow  

E-Print Network [OSTI]

We report on the multiwavelength observations of the bright, long gamma-ray burst \\GRB, by the \\Fermi and \\Swift observatories, and by the MOA and GROND optical telescopes. The analysis of the prompt phase reveals that \\GRB shares many features with bright Large Area Telescope bursts observed by \\Fermi during the first 3 years on-orbit: a light curve with short time variability across the whole energy range during the prompt phase, delayed onset of the emission above 100 MeV, extra power law component and temporally extended high-energy emission. In addition, this the first GRB for which simultaneous GeV, X-ray, and optical data are available over multiple epochs beginning just after the trigger time and extending for more than 800 s, allowing temporal and spectral analysis in different epochs that favor emission from the forward shock in a wind-type medium. The observed temporally extended GeV emission is most likely part of the high-energy end of the afterglow emission. Both the single-zone pair transparenc...

,

2012-01-01T23:59:59.000Z

400

Polarization components in ?0 photoproduction at photon energies up to 5.6 GeV  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

We present new data for the polarization observables of the final state proton in the 1H(? ?, ? p)?0 reaction. These data can be used to test predictions based on hadron helicity conservation (HHC) and perturbative QCD (pQCD). These data have both small statistical and systematic uncertainties, and were obtained with beam energies between 1.8 and 5.6 GeV and for ?0 scattering angles larger than 75{sup o} in center-of-mass (c.m.) frame. The data extend the polarization measurements data base for neutral pion photoproduction up to E? = 5.6 GeV. The results show non-zero induced polarization above the resonance region. The polarization transfer components vary rapidly with the photon energy and ?0 scattering angle in the center-of-mass frame. This indicates that HHC does not hold and that the pQCD limit is still not reached in the energy regime of this experiment.

Luo, W; Brash, E J; Gilman, R; Jones, M K; Meziane, M; Pentchev, L; Perdrisat, C F; Puckett, A.J.R.; Punjabi,; Wesselmann, F R; Marsh,; Matulenko, Y; Maxwell, J; Meekins, D; Melnik, Y; Miller, J; Mkrtchyan, A; Mkrtchyan, H; Moffit, B; Moreno, O; Mulholland, J; Narayan, A; Nuruzzaman,; Nedev, S; Piasetzky, E; Pierce, W; Piskunov, N M; Prok, Y; Ransome, R D; Razin, D S; Reimer, P E; Reinhold, J; Rondon, O; Shabestari, M; Shahinyan, A; Shestermanov, K; Sirca, S; Sitnik, I; Smykov, L; Smith, G; Solovyev, L; Solvignon, P; Strakovsky, I I; Subedi, R; Suleiman, R; Tomasi-Gustafsson, E; Vasiliev, A; Veilleux, M; Wood, S; Ye, Z; Zanevsky, Y; Zhang, X; Zhang, Y; Zheng, X; Zhu, L; Ahmidouch, A; Albayrak, I; Aniol, K A; Arrington, J; Asaturyan, A; Ates, O; Baghdasaryan, H; Benmokhtar, F; Bertozzi, W; Bimbot, L; Bosted, P; Boeglin, W; Butuceanu, C; Carter, P; Chernenko, S; Christy, M E; Commisso, M; Cornejo, J C; Covrig, S; Danagoulian, S; Daniel, A; Davidenko, A; Day, D; Dhamija, S; Dutta, D; Ent, R; Frullani, S; Fenker, H; Frlez, E; Garibaldi, F; Gaskell, D; Gilad, S; Goncharenko, Y; Hafidi, K; Hamilton, D; Higinbotham, D W; Hinton, W; Horn, T; Hu, B; Huang, J; Huber, G M; Jensen, E; Kang, H; Keppel, C; Khandaker, M; King, P; Kirillov, D; Kohl, M; Kravtsov, V; Kumbartzki, G; Li, Y; Mamyan, V; Margaziotis, D J; Markowitz, P

2012-05-31T23:59:59.000Z

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401

Nucleon-Nucleon Optical Model for Energies to 3 GeV  

E-Print Network [OSTI]

Several nucleon-nucleon potentials, Paris, Nijmegen, Argonne, and those derived by quantum inversion, which describe the NN interaction for T-lab below 300$ MeV are extended in their range of application as NN optical models. Extensions are made in r-space using complex separable potentials definable with a wide range of form factor options including those of boundary condition models. We use the latest phase shift analyses SP00 (FA00, WI00) of Arndt et al. from 300 MeV to 3 GeV to determine these extensions. The imaginary parts of the optical model interactions account for loss of flux into direct or resonant production processes. The optical potential approach is of particular value as it permits one to visualize fusion, and subsequent fission, of nucleons when T-lab above 2 GeV. We do so by calculating the scattering wave functions to specify the energy and radial dependences of flux losses and of probability distributions. Furthermore, half-off the energy shell t-matrices are presented as they are readily deduced with this approach. Such t-matrices are required for studies of few- and many-body nuclear reactions.

A. Funk; H. V. von Geramb; K. A. Amos

2001-05-04T23:59:59.000Z

402

Inferring the nature of the boson at 125-126 GeV  

E-Print Network [OSTI]

The presence of a bosonic resonance near 125 GeV has been firmly established at the Large Hadron Collider. Understanding the exact nature of this boson is a priority. The task now is to verify whether the boson is indeed the scalar Higgs as proposed in the Standard Model of particle physics, or something more esoteric as proposed in the plethora of extensions to the Standard Model. This requires a verification that the boson is a $J^{PC}=0^{++}$ state with couplings precisely as predicted by the Standard Model. Since a non Standard Model boson can in some cases mimic the Standard Model Higgs in its couplings to gauge bosons, it is essential to rule out any anomalous behavior in its gauge couplings. We present a step by step methodology to determine the properties of this resonance without making any assumptions about its couplings. We present the analysis in terms of uni-angular distributions which lead to angular asymmetries that allow for the extraction of the couplings of the 125-126 GeV resonance to Z bosons. We show analytically and numerically, that these asymmetries can unambiguously confirm whether the new boson is indeed the Standard Model Higgs boson.

Arjun Menon; Tanmoy Modak; Dibyakrupa Sahoo; Rahul Sinha; Hai-Yang Cheng

2014-05-01T23:59:59.000Z

403

The Majorana Demonstrator: A Search for Neutrinoless Double-beta Decay of 76Ge  

E-Print Network [OSTI]

Neutrinoless double-beta decay is a hypothesized process where in some even-even nuclei it might be possible for two neutrons to simultaneously decay into two protons and two electrons without emitting neutrinos. This is possible only if neutrinos are Majorana particles, i.e. fermions that are their own antiparticles. Neutrinos being Majorana particles would explicitly violate lepton number conservation, and might play a role in the matter-antimatter asymmetry in the universe. The observation of neutrinoless double-beta decay would also provide complementary information related to neutrino masses. The Majorana Collaboration is constructing the Majorana Demonstrator, a 40-kg modular germanium detector array, to search for the Neutrinoless double-beta decay of 76Ge and to demonstrate a background rate at or below 3 counts/(ROI-t-y) in the 4 keV region of interest (ROI) around the 2039 keV Q-value for 76Ge Neutrinoless double-beta decay. In this paper, we discuss the physics of neutrinoless double beta decay and then focus on the Majorana Demonstrator, including its design and approach to achieve ultra-low backgrounds and the status of the experiment.

Majorana Collaboration; W. Xu; N. Abgrall; F. T. Avignone III; A. S. Barabash; F. E. Bertrand; V. Brudanin; M. Busch; M. Buuck; D. Byram; A. S. Caldwell; Y-D. Chan; C. D. Christofferson; C. Cuesta; J. A. Detwiler; Yu. Efremenko; H. Ejiri; S. R. Elliott; A. Galindo-Uribarri; G. K. Giovanetti; J. Goett; M. P. Green; J. Gruszko; I. Guinn; V. E. Guiseppe; R. Henning; E. W. Hoppe; S. Howard; M. A. Howe; B. R. Jasinski; K. J. Keeter; M. F. Kidd; S. I. Konovalov; R. T. Kouzes; B. D. LaFerriere; J. Leon; J. MacMullin; R. D. Martin; S. J. Meijer; S. Mertens; J. L. Orrell; C. O'Shaughnessy; N. R. Overman; A. W. P. Poon; D. C. Radford; J. Rager; K. Rielage; R. G. H. Robertson; E. Romero-Romero; M. C. Ronquest; B. Shanks; M. Shirchenko; N. Snyder; A. M. Suriano; D. Tedeschi; J. E. Trimble; R. L. Varner; S. Vasilyev; K. Vetter; K. Vorren; B. R. White; J. F. Wilkerson; C. Wiseman; E. Yakushev; C-H. Yu; V. Yumatov

2015-01-13T23:59:59.000Z

404

Polarization experiments with hadronic and electromagnetic probes. [2. 1 and 4. 4 GeV  

SciTech Connect (OSTI)

The following research activities were carried out during the past year Calibration of focal plane polarimeter POMME up to 2.4 GeV at Saturne National Laboratory (LNS) in Saclay. Measurement of tensor analyzing power T[sub 20] and polarization transfer [kappa][sub 0] at Saturne up to 2.1 GeV in elastic backward dp scattering [rvec d]p [yields] [rvec p]d. Measurement of tensor analyzing power T[sub 20] at synchrophasotron in Dubha up to 4.4 Gev in elastic backward dp scattering [rvec d]p [yields] pd. Resubmission of conditionally Approved G[sub EP] proposal 89-14 at CEBAF. Start construction of focal plane polarimeter (FPP) for CEBAF hall A hadron spectrometer. The planned work for the next year includes: Construction of FPP for CEBAF hall A hadron spectrometer; measurement of polarization transfer [kappa][sub 0] and tensor analyzing power T[sub 20] in elastic backward dp scattering at Saturne; measurements of tensor analyzing power in [sup 1]H([sup 6]Li,d)X, [sup 1]H([sup 6]Li,[alpha])X, [sup 1]H([sup 6]Li,t)X and [sup 1]H([sup 6]Li,[sup 3]He)X reactions at Saturne; and study of polarization transfer in [sup 2]H([rvec e],e[prime][rvec p])n reaction at Bates.

Punjabi, V.

1993-03-30T23:59:59.000Z

405

Studies of Nucleon Form Factors with 12 GeV CEBAF and SuperBigBite  

SciTech Connect (OSTI)

The elastic electromagnetic form factors are among the most fundamental quantities that describe the ground-state structure of the proton and neutron. Precision data of the form factors over a wide kinematical range provide a powerful test of current theories of hadron structure. A number of experiments aiming to measure the electric and magnetic elastic form factors of the neutron, G{sub E}{sup n} and G{sub M}{sup n}, and proton, G{sub E}{sup p}, at very high momentum transfer, up to the range of Q{sup 2} = 10-14 (GeV/c){sup 2}, are planned to be carried out with the future 11 GeV electron beam of the upgraded CEBAF at Jefferson Lab. These experiments will determine the nucleon form factors with unprecedented precision to Q{sup 2}-values up to three times higher than those of existing data. We review the approved proposals and the conceptual design of a new spectrometer, SuperBigBite, that will be used in these and other future experiments at Jefferson Lab.

Jens-Ole Hansen

2012-04-01T23:59:59.000Z

406

Design of the Trigger Interface and Distribution Board for CEBAF 12 GeV Upgrade  

SciTech Connect (OSTI)

The design of the Trigger Interface and Distribution (TID) board for the 12 GeV Upgrade at the Continuous Electron Beam Accelerator Facility (CEBAF) at TJNAL is described. The TID board distributes a low jitter system clock, synchronized trigger, and synchronized multi-purpose SYNC signal. The TID also initiates data acquisition for the crate. With the TID boards, a multi-crate system can be setup for experiment test and commissioning. The TID board can be selectively populated as a Trigger Interface (TI) board, or a Trigger Distribution (TD) board for the 12 GeV upgrade experiments. When the TID is populated as a TI, it can be located in the VXS crate and distribute the CLOCK/TRIGGER/SYNC through the VXS P0 connector; it can also be located in the standard VME64 crate, and distribute the CLOCK/TRIGGER/SYNC through the VME P2 connector or front panel. It initiates the data acquisition for the front crate where the TI is positioned in. When the TID is populated as a TD, it fans out the CLOCK/TRIGGER/SYNC from trigger supervisor to the front end crates through optical fibres. The TD monitors the trigger processing on the TIs, and gives feedback to the TS for trigger flow control. Field Programmable Gate Arrays (FPGA) is utilised on TID board to provide programmability. The TID boards were intensively tested on the bench, and various setups.

Gu, Jianhui; Dong, Hai; Cuevas, R; Gyurjyan, Vardan; Heyes, William; Jastrzembski, Edward; Kaneta, Scott; Nganga, Nicholas; Moffit, Bryan; Raydo, Benjamin; Timmer, Carl

2012-10-01T23:59:59.000Z

407

Numerical modeling of multi-GeV laser wakefield electron acceleration inside a dielectric capillary tube  

SciTech Connect (OSTI)

Numerical modeling of laser wakefield electron acceleration inside a gas filled dielectric capillary tube is presented. Guiding of a short pulse laser inside a dielectric capillary tube over a long distance (?1 m) and acceleration of an externally injected electron bunch to ultra-relativistic energies (?5-10 GeV) are demonstrated in the quasi-linear regime of laser wakefield acceleration. Two dimensional axisymmetric simulations were performed with the code WAKE-EP (Extended Performances), which allows computationally efficient simulations of such long scale plasma. The code is an upgrade of the quasi-static particle code, WAKE [P. Mora and T. M. Antonsen, Jr., Phys. Plasmas 4, 217 (1997)], to simulate the acceleration of an externally injected electron bunch (including beam loading effect) and propagation of the laser beam inside a dielectric capillary. The influence of the transverse electric field of the plasma wake on the radial loss of the accelerated electrons to the dielectric wall is investigated. The stable acceleration of electrons to multi-GeV energy with a non-resonant laser pulse with a large spot-size is demonstrated.

Paradkar, B. S.; Cros, B.; Maynard, G. [Laboratoire de Physique des Gaz et des Plasmas, University Paris Sud 11-CNRS, Orsay (France)] [Laboratoire de Physique des Gaz et des Plasmas, University Paris Sud 11-CNRS, Orsay (France); Mora, P. [Centre de Physique Theorique, CNRS, Ecole Polytechnique, 91128 Palaiseau Cedex (France)] [Centre de Physique Theorique, CNRS, Ecole Polytechnique, 91128 Palaiseau Cedex (France)

2013-08-15T23:59:59.000Z

408

Novel Higgs-to-125 GeV Higgs boson decays in the complex NMSSM  

E-Print Network [OSTI]

In the Next-to-Minimal Supersymmetric Standard Model (NMSSM) a variety of parameter configurations yields a Higgs boson consistent with the one observed at the LHC. Additionally, the Higgs sector of the model can contain explicit CP-violating phases even at the tree level, in contrast with the Minimal Supersymmetric Standard Model (MSSM). In this article we present the one-loop Higgs boson mass matrix of the complex NMSSM in the renormalisation-group-improved effective potential approach. We also present the trilinear Higgs boson self-couplings as well as various partial decay widths of a generic CP-mixed Higgs boson in the model. We then analyse a very interesting phenomenological scenario wherein the decay of a relatively light pseudoscalar-like Higgs boson into ~ 125 GeV SM-like Higgs boson(s) is induced by non-zero CP-violating phases. We discuss in detail a few benchmark cases in which such a decay can contribute significantly to the production of SM-like Higgs bosons at the LHC on top of the gluon fusion process. It can thus be partially responsible for the gamma.gamma excess near 125 GeV due to the subsequent decay of the SM-like Higgs boson. Such a scenario is extremely difficult to realize in the complex MSSM and, if probed at the LHC, it could provide an indication of the non-minimal nature of supersymmetry.

Shoaib Munir

2014-05-05T23:59:59.000Z

409

Environmental assessment of the proposed 7-GeV Advanced Photon Source  

SciTech Connect (OSTI)

The potential environmental impacts of construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at Argonne National Laboratory were evaluated. Key elements considered include on- and off-site radiological effects; socioeconomic effects; and impacts to aquatic and terrestrial flora and fauna, wetlands, water and air quality, cultural resources, and threatened or endangered species. Also incorporated are the effects of decisions made as a result of the preliminary design (Title I) being prepared. Mitigation plans to further reduce impacts are being developed. These plans include coordination with the US Army Corps of Engineers (COE) and other responsible agencies to mitigate potential impacts to wetlands. This mitigation includes providing habitat of comparable ecological value to assure no net loss of wetlands. These mitigation actions would be permitted and monitored by COE. A data recovery plan to protect cultural resources has been developed and approved, pursuant to a Programmatic Agreement among the US Department of Energy, the Advisory Council on Historic Preservation, and the Illinois State Historic Preservation Office. Applications for National Emission Standard for Hazardous Air Pollutants (NESHAP) and air emissions permits have been submitted to the US Environmental Protection Agency (EPA) and the Illinois Environmental Protection Agency (IEPA), respectively. 71 refs., 10 figs., 11 tabs.

Not Available

1990-02-01T23:59:59.000Z

410

Nanosecond laser-induced phase transitions in pulsed laser deposition-deposited GeTe films  

SciTech Connect (OSTI)

Phase transformations between amorphous and crystalline states induced by irradiation of pulsed laser deposition grown GeTe thin films with nanosecond laser pulses at 248?nm and pulse duration of 20?ns are studied. Structural and optical properties of the Ge-Te phase-change films were studied by X-ray diffraction and optical reflectivity measurements as a function of the number of laser pulses between 0 and 30 pulses and of the laser fluence up to 195 mJ/cm{sup 2}. A reversible phase transition by using pulse numbers ??5 at a fluence above the threshold fluence between 11 and 14 mJ/cm{sup 2} for crystallization and single pulses at a fluence between 162 and 182 mJ/cm{sup 2} for amorphization could be proved. For laser fluences from 36 up to 130 mJ/cm{sup 2}, a high optical contrast of 14.7% between the amorphous and crystalline state is measured. A simple model is used that allows the discussion on the distribution of temperature in dependency on the laser fluence.

Sun, Xinxing, E-mail: xinxing.sun@iom-leipzig.de; Thelander, Erik; Lorenz, Pierre; Gerlach, Jrgen W.; Decker, Ulrich; Rauschenbach, Bernd [Leibniz Institute of Surface Modification, Permoserstr. 15, D-04318, Leipzig (Germany)

2014-10-07T23:59:59.000Z

411

Electroactive complex in thermally treated Ge-Si crystals  

SciTech Connect (OSTI)

It is shown by Hall measurements that quenching complexly doped Ge{sub 1-x}Si{sub x} (0 {<=} x {<=} 0.20) crystals from 1050-1080 K leads to the formation of additional electroactive acceptor centers in them. The activation energy of these centers increases linearly with an increase in the silicon content in the crystal and is described by the relation E{sub k}{sup x} = (52 + 320x) meV. Annealing these crystals at 550-570 K removes the additional acceptor levels. It is established that the most likely model for the additional electroactive centers is a pair composed of substituent copper and aluminum atoms (Cu{sub s}Al{sub s}) or interstitial copper and substituent aluminum atoms (Cu{sub i}Al{sub s}). It is shown that the generation of additional deep acceptor levels must be taken into account when using the method of precise doping of Ge{sub 1-x}Si{sub x} crystals with copper.

Azhdarov, G. Kh., E-mail: zangi@physics.ab.az [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Zeynalov, Z. M. [Ganja State University (Azerbaijan); Zakhrabekova, Z. M. [Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Kyazimova, A. I. [Ganja State University (Azerbaijan)

2010-05-15T23:59:59.000Z

412

Growth of Si{sub 0.75}Ge{sub 0.25} alloy layers grown on Si(001) substrates using step-graded short-period (Si{sub m}/Ge{sub n}){sub N} superlattices  

SciTech Connect (OSTI)

Short-period (Si{sub m}/Ge{sub n}){sub N} superlattices (SSLs) are grown step by step on a Si(001) substrates by solid source molecular beam epitaxy. Using the step-graded SSLs as buffer layers, 2000 Aa uniform Si{sub 0.75}Ge{sub 0.25} alloy layers are grown on the same substrates. The growth temperature of the SSLs and uniform layers is 500{degree}C. In the SSLs layers, m and n are the number of monolayers of Si and Ge, respectively. N is the period of (Si{sub m}/Ge{sub n}) bilayers. The samples grown are characterized by x-ray diffraction, atomic force microscopy (AFM), and transmission electron microscopy (TEM) as a function of the step number of SSL layers. The SSLs show very smooth surfaces [the root-mean-square (rms) surface roughness is between 7 and 12 Aa]. A dramatic decrease in roughness is observed in the uniform Si{sub 0.75}Ge{sub 0.25} alloy layers, when even a one-step SSL is used as a buffer layer. A noticeable increase in rms roughness is seen in both SSL and alloy layers when the number of Ge monolayers is changed from one to two. AFM observation shows that the rms surface roughness behavior of the SSLs is reflected to their corresponding top alloy layers. The residual strains in alloy layers are considerably lower, with a maximum relaxation rate of about 80% for the sample with a seven-step SSL buffer. Cross-sectional TEM images show that strained SSL buffer layers effectively deflect threading dislocations in the substrate or confine the dislocations in the SSL buffer layers. {copyright} 2001 American Institute of Physics.

Rahman, M. M.; Matada, H.; Tambo, T.; Tatsuyama, C.

2001-07-01T23:59:59.000Z

413

Proposal for the Purchase, Without a Call for Tenders, of a Medium-Temperature Hot Water Boiler for the 300 GeV Accelerator  

E-Print Network [OSTI]

Proposal for the Purchase, Without a Call for Tenders, of a Medium-Temperature Hot Water Boiler for the 300 GeV Accelerator

1976-01-01T23:59:59.000Z

414

A sonic spark chamber system with on-line computation for studying the reaction $\\pi^{-} + p -> f^{0} + n$ at 3 GeV/c  

E-Print Network [OSTI]

A sonic spark chamber system with on-line computation for studying the reaction $\\pi^{-} + p -> f^{0} + n$ at 3 GeV/c

Bird, L; West, D; Whitehead, G; Wood, E; Crabb, D G; Hutchinson, G W; McEwen, J G; Ott, R; Aitken, D; Hague, J; Jennings, R; Parsons, A J; Auld, E G

1964-01-01T23:59:59.000Z

415

Multiplicity of Charged and Neutral Pions in Deep-Inelastic Scattering of 27.5 GeV Positrons on Hydrogen  

E-Print Network [OSTI]

Multiplicity of Charged and Neutral Pions in Deep-Inelastic Scattering of 27.5 GeV Positrons on Hydrogen

Airapetian, A; Amarian, M; Arrington, J; Aschenauer, E C; Avakian, H; Avakian, R; Avetisian, A; Avetissian, E; Bailey, P; Bains, B; Baumgarten, C; Beckmann, M; Belostotskii, S; Bernreuther, S; Bianchi, N; Bttcher, Helmut B; Borisov, A; Bouwhuis, M; Brack, J; Brauksiepe, S; Braun, B; Brckner, W; Brll, A; Budz, P; Bulten, H J; Capitani, G P; Carter, P; Chumney, P; Cisbani, E; Court, G R; Dalpiaz, P F; De Leo, R; De Nardo, L; De Sanctis, E; De Schepper, D; Devitsin, E G; De Witt-Huberts, P K A; Di Nezza, P; Dzhordzhadze, V; Dren, M; Dvoredsky, A P; Elbakian, G M; Ely, J; Fantoni, A; Feshchenko, A; Ferro-Luzzi, M; Fiedler, K; Filippone, B W; Fischer, H; Fox, B; Franz, J; Frullani, S; Grber, Y; Garibaldi, F; Garutti, E; Gavrilov, G E; Karibian, V; Golendukhin, A; Graw, G; Grebenyuk, O; Green, P W; Greeniaus, L G; Gute, A; Haeberli, W; Hartig, M; Hasch, D; Heesbeen, D; Heinsius, F H; Henoch, M; Hertenberger, R; Hesselink, W H A; Hoffmann-Rothe, P; Hofman, G J; Holler, Y; Holt, R J; Hommez, B; Hoprich, W; Iarygin, G; Ihssen, H; Iodice, M; Izotov, A A; Jackson, H E; Jgoun, A; Kaiser, R; Kanesaka, J; Kinney, E R; Kiselev, A; Kitching, P; Kobayashi, H; Koch, N; Knigsmann, K C; Kolster, H; Korotkov, V A; Kotik, E; Kozlov, V; Krivokhizhin, V G; Kyle, G S; Lagamba, L; Laziev, A; Lenisa, P; Lindemann, T; Lorenzon, W; Makins, N C R; Martin, J W; Marukyan, H O; Masoli, F; McAndrew, M; McIlhany, K; McKeown, R D; Meissner, F; Menden, F; Metz, A; Meyners, N; Miklukho, O; Miller, C A; Milner, R; Muccifora, V; Mussa, R; Nagaitsev, A P; Nappi, E; Naryshkin, Yu; Nass, A; Nowak, Wolf-Dieter; O'Neill, T G; Openshaw, R; Ouyang, J; Owen, B R; Pate, S F; Potashov, S Yu; Potterveld, D H; Rakness, G; Redwine, R P; Reggiani, D; Reolon, A R; Ristinen, R; Rith, K; Robinson, D; Rostomyan, A; Ruh, M; Ryckbosch, D; Sakemi, Y; Sato, F; Savin, I A; Scarlett, C; Schfer, A; Schill, C; Schmidt, F; Schmitt, M; Schnell, G; Schler, K P; Schwind, A; Seibert, J; Shibata, T A; Shin, T; Shutov, V B; Simani, M C; Simon, A; Sinram, K; Steffens, E; Steijger, J J M; Stewart, J; Stsslein, U; Suetsugu, K; Sutter, M F; Tallini, H A; Taroian, S P; Terkulov, A R; Tessarin, S; Thomas, E; Tipton, B; Tytgat, M; Urciuoli, G M; Van den Brand, J F J; van der Steenhoven, G; Van de Vyver, R; Van Hunen, J J; Vetterli, Martin C; Vikhrov, V V; Vincter, M G; Visser, J; Volk, E; Weiskopf, C; Wendland, J; Wilbert, J; Wise, T; Woller, K; Yoneyama, S; Zohrabyan, H G

2001-01-01T23:59:59.000Z

416

Neutron electric form factor up to Q{sup 2} = 1.47 GeV/c{sup 2}  

SciTech Connect (OSTI)

The ratio of the electric to the magnetic form factor of the neutron, g /equiv G{sub En}/G{sub Mn} , was measured via recoil polarimetry (R.G. Arnold, C.E. Carlson, F. Gross, Phys. Rev. C 23, 363 (1981)) from the quasielastic {sup 2}H (/mathop(e)/limitse' /mathop(n)/limits) 1H reaction at three values of Q{sup 2} (viz, 0.45, 1.15, and 1.47 (GeV/c){sup 2}) in Hall C of the Thomas Jefferson National Accelerator Facility. The data reveal that GEn continues to follow the Galster parameterization up to Q{sup 2} = 1.15 (GeV/c){sup 2} and rises above the Galster parameterization at Q{sup 2} = 1.47 (GeV/c){sup 2}.

Richard Madey; Andrei Semenov; S. Taylor; Aram Aghalaryan; Erick Crouse; Glen MacLachlan; Bradley Plaster; Shigeyuki Tajima; William Tireman; Chenyu Yan; Abdellah Ahmidouch; Brian Anderson; Hartmuth Arenhovel; Razmik Asaturyan; O. Baker; Alan Baldwin; Herbert Breuer; Roger Carlini; E Christy; Steve Churchwell; Leon Cole; Areg Danagoulian; Donal Day; Mostafa Elaasar; Rolf Ent; Manouchehr Farkhondeh; Howard Fenker; John Finn; Liping Gan; Kenneth Garrow; Paul Gueye; Calvin Howell; Bitao Hu; Mark Jones; James Kelly; Cynthia Keppel; Mahbubul Khandaker; Wooyoung Kim; Stanley Kowalski; Allison Lung; David Mack; D. Manley; Pete Markowitz; Joseph Mitchell; Hamlet Mkrtchyan; Allena Opper; Charles Perdrisat; Vina Punjabi; Brian Raue; Tilmann Reichelt; Joerg Reinhold; Julie Roche; Yoshinori Sato; Irina Semenova; Wonick Seo; Neven Simicevic; G. Smith; Samuel Stepanyan; Vardan Tadevosyan; Liguang Tang; Paul Ulmer; William Vulcan; J. W. Watson; Steven Wells; Frank Wesselmann; Stephen Wood; Chen Yan; Seunghoon Yang; Lulin Yuan; Wei-Ming Zhang; Hong Guo Zhu; Xiaofeng Zhu

2003-07-15T23:59:59.000Z

417

pi0 photoproduction on the proton for photon energies from 0.675 to 2.875-GeV  

SciTech Connect (OSTI)

Differential cross sections for the reaction $\\gamma p \\to p \\pi^0$ have been measured with the CEBAF Large Acceptance Spectrometer (CLAS) and a tagged photon beam with energies from 0.675 to 2.875 GeV. The results reported here possess greater accuracy in the absolute normalization than previous measurements. They disagree with recent CB-ELSA measurements for the process at forward scattering angles. Agreement with the SAID and MAID fits is found below 1 GeV. The present set of cross sections has been incorporated into the SAID database, and exploratory fits have been extended to 3 GeV. Resonance couplings have been extracted and compared to previous determinations.

Michael Dugger; Barry Ritchie; Jacques Ball; Patrick Collins; Evgueni Pasyuk; Richard Arndt; William Briscoe; Igor Strakovski; Ron Workman; Gary Adams; Moscov Amaryan; Pawel Ambrozewicz; Eric Anciant; Marco Anghinolfi; Burin Asavapibhop; G. Asryan; Gerard Audit; Harutyun Avakian; H. Bagdasaryan; Nathan Baillie; Nathan Baltzell; Steve Barrow; Marco Battaglieri; Kevin Beard; Ivan Bedlinski; Ivan Bedlinskiy; Mehmet Bektasoglu; Matthew Bellis; Nawal Benmouna; Barry Berman; Nicola Bianchi; Angela Biselli; Billy Bonner; Sylvain Bouchigny; Sergey Boyarinov; Robert Bradford; Derek Branford; William Brooks; Stephen Bueltmann; Volker Burkert; Cornel Butuceanu; John Calarco; Sharon Careccia; Daniel Carman; Bryan Carnahan; Shifeng Chen; Philip Cole; Alan Coleman; Philip Coltharp; Dieter Cords; Pietro Corvisiero; Donald Crabb; Hall Crannell; John Cummings; Enzo De Sanctis; Raffaella De Vita; Pavel Degtiarenko; Haluk Denizli; Lawrence Dennis; Alexandre Deur; Kahanawita Dharmawardane; Kalvir Dhuga; Richard Dickson; Chaden Djalali; Gail Dodge; Joseph Donnelly; David Doughty; P. Dragovitsch; Steven Dytman; Oleksandr Dzyubak; Hovanes Egiyan; Kim Egiyan; Latifa Elouadrhiri; A. Empl; Paul Eugenio; Renee Fatemi; Gleb Fedotov; Gerald Feldman; Robert Feuerbach; John Ficenec; Tony Forest; Herbert Funsten; Michel Garcon; Gagik Gavalian; Gerard Gilfoyle; Kevin Giovanetti; Francois-Xavier Girod; John Goetz; Ralf Gothe; Keith Griffioen; Michel Guidal; Matthieu Guillo; Nevzat Guler; Lei Guo; Vardan Gyurjyan; Cynthia Hadjidakis; Rafael Hakobyan; John Hardie; D. Heddle; F. Hersman; Kenneth Hicks; Ishaq Hleiqawi; Maurik Holtrop; J. Hu; Marco Huertas; Charles Hyde; Charles Hyde-Wright; Yordanka Ilieva; David Ireland; Boris Ishkhanov; Mark Ito; David Jenkins; Hyon-Suk Jo; Kyungseon Joo; Henry Juengst; Narbe Kalantarians; James Kellie; Mahbubul Khandaker; Kui Kim; Kinney Kim; Wooyoung Kim; Andreas Klein; Franz Klein; Alexei Klimenko; Mike Klusman; Mikhail Kossov; Zebulun Krahn; Laird Kramer; Valery Kubarovsky; Joachim Kuhn; Sebastian Kuhn; Viacheslav Kuznetsov; Jeff Lachniet; Jean Laget; Jorn Langheinrich; David Lawrence; Tsung-shung Lee; Ana Lima; Kenneth Livingston; K. Lukashin; Joseph Manak; Claude Marchand; Leonard Maximon; Simeon McAleer; Bryan McKinnon; John McNabb; Bernhard Mecking; Mac Mestayer; Curtis Meyer; Tsutomu Mibe; Konstantin Mikhaylov; Ralph Minehart; Marco Mirazita; Rory Miskimen; Viktor Mokeev; Kei Moriya; Steven Morrow; Valeria Muccifora; James Mueller; Gordon Mutchler; Pawel Nadel-Turonski; James Napolitano; Rakhsha Nasseripour; Silvia Niccolai; Gabriel Niculescu; Maria-Ioana Niculescu; Bogdan Niczyporuk; Megh Niroula; Rustam Niyazov; Mina Nozar; Grant O'Rielly; Mikhail Osipenko; Alexander Ostrovidov; K Park; Craig Paterson; Sasha Philips; Joshua Pierce; Nikolay Pivnyuk; Dinko Pocanic; Oleg Pogorelko; S. Pozdniakov; Barry Preedom; John Price; Yelena Prok; Dan Protopopescu; Liming Qin; Brian Raue; Gregory Riccardi; Giovanni Ricco; Marco Ripani; Federico Ronchetti; Guenther Rosner; Patrizia Rossi; David Rowntree; Philip Rubin; Franck Sabatie; Julian Salamanca; Carlos Salgado; Joseph Santoro; Vladimir Sapunenko; Reinhard Schumacher; Vladimir Serov; Aziz Shafi; Youri Sharabian; J. Shaw; Sebastio Simionatto; Alexander Skabelin; Elton Smith; Lee Smith; Daniel Sober; M. Spraker; Aleksey Stavinskiy; Samuel Stepanyan; Stepan Stepanyan; Burnham Stokes; Paul Stoler; Steffen Strauch; Mauro Taiuti; Simon Taylor; David Tedeschi; Ulrike Thoma; R. Thompson; Avtandil Tkabladze; Svyatoslav Tkachenko; Luminita Todor; Clarisse Tur; Maurizio Ungaro; Michael Vineyard; Alexander Vlassov; Xue kai Wang; Lawrence Weinstein; Henry Weller; Dennis Weygand; M. Williams; Elliott Wolin; M.H. Wood; A. Yegneswaran; Jae-Chul Yun; Lorenzo Zana; Jixie Zhang

2007-07-23T23:59:59.000Z

418

Tunable photoluminescence of self-assembled GeSi quantum dots by B{sup +} implantation and rapid thermal annealing  

SciTech Connect (OSTI)

The layered GeSi quantum dots (QDs) are grown on (001) Si substrate by molecular beam epitaxy. The photoluminescence (PL) peak of the as-grown GeSi quantum dots has obvious blue shift and enhancement after processed by ion implantation and rapid thermal annealing. It is indicated that the blue shift is originated from the interdiffusion of Ge and Si at the interface between QDs and the surrounding matrix. The dependence of PL intensity on the excitation power shows that there are the nonradiative centers of shallow local energy levels from the point defects caused by the ion implantation, but not removed by the rapid thermal annealing. The tunable blue shift of the PL position from the 1300?nm to 1500?nm region may have significant application value in the optical communication.

Chen, Yulu; Wu, Shan; Ma, Yinjie; Fan, Yongliang; Yang, Xinju; Zhong, Zhenyang; Jiang, Zuimin [National Key Laboratory for Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)

2014-06-21T23:59:59.000Z

419

A study of the centrally produced 4pi channel in pp interactions at 450 GeV/c  

E-Print Network [OSTI]

The reaction pp -> pf (pi+pi-pi+pi-) ps has been studied at 450 GeV/c in an experiment designed to search for gluonic states. A spin analysis has been performed and the dPT filter applied. In addition to the well known f1(1285) there is evidence for two JPC=2-+ states called the eta2(1620) and eta2(1875) and a broad scalar called the f0(2000). The production of these states as a function of the dPT kinematical filter shows the behaviour expected for qqbar states. In contrast, there is evidence for two states at 1.45 GeV and at 1.9 GeV which do not show the behaviour observed for qqbar states.

The WA102 Collaboration; D. Barberis et al

1997-07-09T23:59:59.000Z

420

Spectral reflectance and responsivity of Ge- and InGaAs-photodiodes in the near-infrared: measurement and model  

SciTech Connect (OSTI)

The spectral reflectance and responsivity of Ge- and InGaAs-photodiodes at (nearly) normal and oblique incidence (45 degree sign ) were investigated. The derived data allow a calculation of the photodiodes responsivities for any incident angle. The measurements were carried out with s-and p-polarized radiation in the wavelength range from 1260 to1640 nm. The spectral reflectance of the photodiodes was modeled by using the matrix approach developed for thin-film optical assemblies. The comparison between the calculated and measured reflectance shows a difference of less than 2% for the Ge-photodiode. For the InGaAs-photodiode, the differences between measured and calculated reflectance are larger, i.e., up to 6% for wavelengths between 1380 and1580 nm. Despite the larger differences between calculated and measured spectral reflectances for the InGaAs-photodiode, the difference between calculated and measured spectral responsivity is even smaller for the InGaAs-photodiode than for the Ge-photodiode, i.e.,?1.2% for the InGaAs-photodiode compared to?2.2% for the Ge-photodiode. This is because the difference in responsivity is strongly correlated to the absolute spectral reflectance level, which is much lower for the InGaAs-photodiode. This observation also shows the importance of having small reflectances, i.e.,appropriate antireflection coatings for the photodiodes. The relative standard uncertainty associated with the modeled spectral responsivity is about 2.2% for the Ge-photodiode and about 1.2% for the InGaAs-photodiode for any incident angle over the whole spectral range measured. The data obtained for the photodiodes allow the calculation of the spectral responsivity of Ge- and InGaAs-trap detectors and the comparison with experimental results.

Lopez, M.; Hofer, H.; Stock, K. D.; Bermudez, J. C.; Schirmacher, A.; Schneck, F.; Kueck, S

2007-10-10T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Measurement of D* Mesons in Jets from p + p Collisions at sqrt s = 200 GeV  

SciTech Connect (OSTI)

We report the measurement of charged D* mesons in inclusive jets produced in proton-proton collisions at a center of mass energy {radical}s = 200 GeV with the STAR experiment at RHIC. For D* mesons with fractional momenta 0.2 < z < 0.5 in inclusive jets with 11.5 GeV mean transverse energy, the production rate is found to be N(D*{sup +} + D*{sup -})/N(jet) = 0.015 {+-} 0.008(stat) {+-} 0.007(sys). This rate is consistent with perturbative QCD evaluation of gluon splitting into a pair of charm quarks and subsequent hadronization.

STAR Coll

2009-05-16T23:59:59.000Z

422

Detection efficiency of Ge(Li) and HPGe detectors for. gamma. -rays up to 10 MeV  

SciTech Connect (OSTI)

The relative efficiency up to 9.7 MeV was calibrated for two coaxial detectors, one Ge(Li) and one high purity Ge. The efficiency curves were determined by using a combination of standard radioactive sources and (n,..gamma..) reactions. Based on the result of this work, the general slope of the two detector efficiency curves appears to be similar and in agreement with earlier work reported by McCallum and Coote. When plotted as a semilogarithmic function of energy the efficiency is linear from 2 to 9.7 MeV.

Lin, J.; Henry, E.A.; Meyer, R.A.

1980-08-11T23:59:59.000Z

423

A Higgs boson near 125 GeV with enhanced di-photon signal in the NMSSM  

E-Print Network [OSTI]

A natural region in the parameter space of the NMSSM can accomodate a CP-even Higgs boson with a mass of about 125 GeV and, simultaneously, an enhanced cross section times branching ratio in the di-photon channel. This happens in the case of strong singlet-doublet mixing, when the partial width of a 125 GeV Higgs boson into bb is strongly reduced. In this case, a second lighter CP-even Higgs boson is potentially also observable at the LHC.

Ulrich Ellwanger

2012-02-23T23:59:59.000Z

424

Single and double pion production in np collisions at 1.25 GeV with HADES  

E-Print Network [OSTI]

The preliminary results on charged pion production in np collisions at an incident beam energy of 1.25 GeV measured with HADES are presented. The np reactions were isolated in dp collisions at 1.25 GeV/u using the Forward Wall hodoscope, which allowed to register spectator protons. The results for np -> pppi-, np -> nppi+pi- and np -> dpi+pi- channels are compared with OPE calculations. A reasonable agreement between experimental results and the predictions of the OPE+OBE model is observed.

The HADES Collaboration; A. K. Kurilkin; G. Agakishiev; A. Balanda; D. Belver; A. Belyaev; A. Blanco; M. Bhmer; J. L. Boyard; P. Cabanelas; E. Castro; S. Chernenko; J. D\\'\\iaz; A. Dybczak; E. Epple; L. Fabbietti; O. Fateev; P. Finocchiaro; P. Fonte; J. Friese; I. Frhlich; T. Galatyuk; J. A. Garzn; A. Gil; M. Golubeva; D. Gonzlez-D\\'\\iaz; F. Guber; T. Hennino; R. Holzmann; P. Huck; A. Ierusalimov; I. Iori; A. Ivashkin; M. Jurkovic; B. Kmpfer; T. Karavicheva; I. Koenig; W. Koenig; B. W. Kolb; A. Kopp; G. Korcyl; GK. Kornakov; R. Kotte; A. Kozuch; A. Krsa; F. Krizek; R. Krcken; H. Kuc; W. Khn; A. Kugler; A. Kurepin; P. Kurilkin; P. Khlitz; V. Ladygin; J. Lamas-Valverde; S. Lang; K. Lapidus; T. Liu; L. Lopes; M. Lorenz; L. Maier; A. Mangiarotti; J. Markert; V. Metag; B. Michalska; J. Michel; C. Mntz; L. Naumann; Y. C. Pachmayer; M. Palka; Y. Parpottas; V. Pechenov; O. Pechenova; J. Pietraszko; W. Przygoda; B. Ramstein; A. Reshetin; J. Roskoss; A. Rustamov; A. Sadovsky; P. Salabura; A. Schmah; J. Siebenson; Yu. G. Sobolev; S. Spataro; H. Strbele; J. Stroth; C. Sturm; M. Sudol; A. Tarantola; K. Teilab; P. Tlusty; M. Traxler; R. Trebacz; H. Tsertos; T. Vasiliev; V. Wagner; M. Weber; J. Wstenfeld; S. Yurevich; Y. Zanevsky

2011-02-11T23:59:59.000Z

425

Single and double pion production in np collisions at 1.25 GeV with HADES  

E-Print Network [OSTI]

The preliminary results on charged pion production in np collisions at an incident beam energy of 1.25 GeV measured with HADES are presented. The np reactions were isolated in dp collisions at 1.25 GeV/u using the Forward Wall hodoscope, which allowed to register spectator protons. The results for np -> pppi-, np -> nppi+pi- and np -> dpi+pi- channels are compared with OPE calculations. A reasonable agreement between experimental results and the predictions of the OPE+OBE model is observed.

Kurilkin, A K; Balanda, A; Belver, D; Belyaev, A; Blanco, A; Bhmer, M; Boyard, J L; Cabanelas, P; Castro, E; Chernenko, S; D\\'\\iaz, J; Dybczak, A; Epple, E; Fabbietti, L; Fateev, O; Finocchiaro, P; Fonte, P; Friese, J; Frhlich, I; Galatyuk, T; Garzn, J A; Gil, A; Golubeva, M; Gonzlez-D\\'\\iaz, D; Guber, F; Hennino, T; Holzmann, R; Huck, P; Ierusalimov, A; Iori, I; Ivashkin, A; Jurkovic, M; Kmpfer, B; Karavicheva, T; Koenig, I; Koenig, W; Kolb, B W; Kopp, A; Korcyl, G; Kornakov, GK; Kotte, R; Kozuch, A; Krsa, A; Krizek, F; Krcken, R; Kuc, H; Khn, W; Kugler, A; Kurepin, A; Kurilkin, P; Khlitz, P; Ladygin, V; Lamas-Valverde, J; Lang, S; Lapidus, K; Liu, T; Lopes, L; Lorenz, M; Maier, L; Mangiarotti, A; Markert, J; Metag, V; Michalska, B; Michel, J; Mntz, C; Naumann, L; Pachmayer, Y C; Palka, M; Parpottas, Y; Pechenov, V; Pechenova, O; Pietraszko, J; Przygoda, W; Ramstein, B; Reshetin, A; Roskoss, J; Rustamov, A; Sadovsky, A; Salabura, P; Schmah, A; Siebenson, J; Sobolev, Yu G; Spataro, S; Strbele, H; Stroth, J; Sturm, C; Sudol, M; Tarantola, A; Teilab, K; Tlusty, P; Traxler, M; Trebacz, R; Tsertos, H; Vasiliev, T; Wagner, V; Weber, M; Wstenfeld, J; Yurevich, S; Zanevsky, Y

2011-01-01T23:59:59.000Z

426

Exclusive Photoproduction of Charged Pions in Hydrogen and Deuterium from 1 to 6 GeV  

SciTech Connect (OSTI)

The study of the transition region in the description of exclusive processes and hadron structure, from the nucleon-meson degrees of freedom in meson-exchange models at low energy to the quark-gluon degrees of freedom in pQCD at high energy, is essential for us to understand the strong interaction. The differential cross section measurements for exclusive reactions at fixed center-of-mass angles enable us to investigate the constituent counting rule, which explicitly connects the quark-gluon degrees of freedom to the energy dependence of differential cross sections. JLab Experiment E94-104 was carried out in Hall A with two high resolution spectrometers. It included the coincidence cross section measurement for the [gamma]n --> pi{sup -}[p] process with a deuterium target and the singles measurement for the [gamma]p --> pi{sup +}[n] process with a hydrogen target. The untagged real photons were generated by the electron beam impinging on a copper radiator. The photon energies ranged from 1.1 to 5.5 GeV, corresponding to the center-of-mass energies from 1.7 to 3.4 GeV. The pion center-of-mass angles were fixed at 50 deg, 70 deg, 90 deg, and also 100 deg, 110 deg at a few energies. The JLab E94-104 data presented in this thesis contain four interesting features. The data exhibit a global scaling behavior for both [pi]{sup -} and [pi]{sup +} photoproduction at high energies and high transverse momenta, consistent with the constituent counting rule and the existing [pi]{sup +} photoproduction data. This implies that the quark-gluon degrees of freedom start to play a role at this energy scale. The data suggests possible substructure of the scaling behavior, which might be oscillations around the scaling value. There are several possible mechanisms that can cause oscillations, for example the one associated with the generalized constituent counting rule involving quark orbital angular momentum. The data show an enhancement in the scaled cross section at center-of-mass energy near 2.2 GeV, where baryon resonances are not as well known as those at low energies. The differential cross section ratios for exclusive [gamma]n --> pi{sup -}[p] to [gamma]p --> pi{sup +}[n] process at [theta]{sub cm} = 90 deg start to show consistency with the prediction based on one-hard-gluon-exchange diagrams at high energies.

Lingyan Zhu

2004-02-28T23:59:59.000Z

427

Interface magnetism of Co{sub 2}FeGe Heusler alloy layers and magnetoresistance of Co{sub 2}FeGe/MgO/Fe magnetic tunnel junctions  

SciTech Connect (OSTI)

The interface magnetism between Co{sub 2}FeGe Heusler alloy layers and MgO layers was investigated using {sup 57}Fe Mssbauer spectroscopy. Interface-sensitive samples, where the {sup 57}Fe isotope was used only for the interfacial atomic layer of the Co{sub 2}FeGe layer on the MgO layer, were prepared using atomically controlled alternate deposition. The {sup 57}Fe Mssbauer spectra of the interface-sensitive samples at room temperature were found similar to those of the bulk-sensitive Co{sub 2}FeGe films in which the {sup 57}Fe isotope was distributed throughout the films. On the other hand, the tunnel magnetoresistance effect of magnetic tunnel junctions with Co{sub 2}FeGe layers as the ferromagnetic electrodes showed strong reduction at room temperature. These results indicate that the strong temperature dependence of the tunneling magnetoresistance of magnetic tunnel junctions using Heusler alloy electrodes cannot be attributed simply to the reduction of the magnetization at the interfaces between the Heusler alloy and insulator layers.

Tanaka, M. A., E-mail: mtanaka@nitech.ac.jp; Maezaki, D.; Ishii, T.; Okubo, A.; Mibu, K. [Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Nagoya, Aichi 466-8555 (Japan); Hiramatsu, R.; Ono, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)

2014-10-28T23:59:59.000Z

428

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect (OSTI)

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Colozza, A.J. [NYMA Setar Inc., Brookpark, OH (United States); Brinker, D.J.; Bents, D.J. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center

1994-12-31T23:59:59.000Z

429

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect (OSTI)

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

1995-03-01T23:59:59.000Z

430

Magnetic structure of Gd[subscript 5]Ge[subscript 4  

SciTech Connect (OSTI)

Gd{sub 5}Ge{sub 4} crystallizes in the orthorhombic space group Pnma, and orders antiferromagnetically below the Neel temperature T{sub N} {approx} 127 K. We have employed x-ray resonant magnetic scattering to elucidate the details of the magnetic structure. The magnetic unit cell is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are primarily aligned along the c axis and the c components of the magnetic moments at the three different sites are equal. The ferromagnetic Gd-rich slabs are stacked antiferromagnetically along the b direction.

Tan, L.; Kreyssig, A.; Kim, J.W.; Goldman, A.I.; McQueeney, R.J.; Wermeille, D.; Sieve, B.; Lograsso, T.A.; Schlagel, D.L.; Budko, S.L.; Pecharsky, V.K.; Gschneidner, Jr., K.A. (Ames); (Iowa State)

2010-07-20T23:59:59.000Z

431

Multifragmentation of Au induced by 14.6 GeV {sup 4}He  

SciTech Connect (OSTI)

The multifragmentation reaction channel was investigated in 14.6 GeV {sup 4}He+Au interactions. The experimental setup enabled event-by-event analysis. An internal correlation study suggests a nearly simultaneous emission of fragments. The velocities (V{sub c.m.}) of the center-of-mass system of correlated fragments were calculated. The transverse component of V{sub c.m.} with respect to the beam direction has higher values than the longitudinal one, which corresponds to large recoil angles of the source. The angular distributions of fragments are sideways peaked. The peak angle is dependent on the atomic number of fragment and multiplicity. Our results show that the heaviest fragment in one event corresponds, on average, to the largest emission angle, the second heaviest fragment corresponds to the second largest emission angle, and so on.

Grabez, B.; Dragic, A. [Institute of Physics, P.O. Box 68, 11080 Belgrade (Serbia and Montenegro)

2006-11-15T23:59:59.000Z

432

Energy levels and radiative transition rates for Ge XXXI, As XXXII, and Se XXXIII  

SciTech Connect (OSTI)

Fine-structure energies of the 67 levels belonging to the 1s{sup 2}, 1s 2l, 1s3l, 1s4l, 1s5l, and 1s6l configurations of Ge XXXI, As XXXII, and Se XXXIII have been calculated using the General-Purpose Relativistic Atomic Structure Package. In addition, radiative rates, oscillator strengths, transition wavelengths, and line strengths have been calculated for all electric dipole, magnetic dipole, electric quadrupole, and magnetic quadrupole transitions among these levels. Lifetimes are also presented for all excited levels of these three ions. We have compared our results with the results available in the literature and the accuracy of the data is assessed. We predict new energy levels, oscillator strengths, and transition probabilities where no other theoretical or experimental results are available, which will form the basis for future experimental work.

Aggarwal, Sunny, E-mail: sunny.du87@gmail.com; Singh, J.; Jha, A.K.S.; Mohan, Man

2014-07-15T23:59:59.000Z

433

A Spin-Light Polarimeter for Multi-GeV Longitudinally Polarized Electron Beams  

SciTech Connect (OSTI)

The physics program at the upgraded Jefferson Lab (JLab) and the physics program envisioned for the proposed electron-ion collider (EIC) include large efforts to search for interactions beyond the Standard Model (SM) using parity violation in electroweak interactions. These experiments require precision electron polarimetry with an uncertainty of < 0.5 %. The spin dependent Synchrotron radiation, called "spin-light," can be used to monitor the electron beam polarization. In this article we develop a conceptual design for a "spin-light" polarimeter that can be used at a high intensity, multi-GeV electron accelerator. We have also built a Geant4 based simulation for a prototype device and report some of the results from these simulations.

Mohanmurthy, Prajwal [Mississippi State University, Starkville, MS (United States); Dutta, Dipangkar [Mississippi State University, Starkville, MS (United States) and Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2014-02-01T23:59:59.000Z

434

Commissioning of helium compression system for the 12 GeV refrigerator  

SciTech Connect (OSTI)

The compressor system used for the Jefferson Lab (JLab) 12 GeV upgrade, also known as the CHL-2 compressor system, incorporates many design changes to the typical compressor skid design to improve the efficiency, reliability and maintainability from previous systems. These include a considerably smaller bulk oil separator design that does not use coalescing elements/media, automated control of cooling oil injection based on the helium discharge temperature, a helium after-cooler design that is designed for and promotes coalescing of residual oil and a variable speed bearing oil pump to reduce oil bypass. The CHL-2 helium compression system has five compressors configured with four pressure levels that supports the three pressure levels in the cold box. This paper will briefly review several of these improvements and discuss some of the recent commissioning results.

Knudsen, Peter N. [JLAB; Ganni, Venkatarao [JLAB; Dixon, Kelly D. [JLAB; Norton, Robert O. [JLAB; Creel, Jonathan D. [JLAB; Arenius, Dana M. [JLAb

2014-01-01T23:59:59.000Z

435

Strangeonium spectroscopy at 11 GeV/c and Cherenkov Ring Imaging at the SLD  

SciTech Connect (OSTI)

This thesis is divided into two sections, which describe portions of the data acquisition system and online software for the Cherenkov Ring Imaging Detector (CRID) for the SLD, and analyses of several low cross section strangeonium channels in data from the LASS spectrometer. The CRID section includes a description of the data acquisition system, determination of the preamplifier gain, and development of an online pulse finding algorithm based on deconvolution. Deconvolution uses knowledge of the preamplifier impulse response to aid in pulse finding. The algorithm is fast and shows good single pulse resolution and excellent double pulse resolution in preliminary tests. The strangeonium analyses are based on data from a 4.1 event/nanobarn exposure of the LASS spectrometer in K{sup {minus}}p interactions at 11 GeV/c, and include studies of {Lambda}{eta}{pi}{sup {plus}}{pi}{sup {minus}}, {Lambda}{Kappa}*{Kappa}*, and {Lambda}{phi}{phi}.

Bienz, T.L.

1990-07-01T23:59:59.000Z

436

Production and Testing Experience with the SRF Cavities for the CEBAF 12 GeV Upgrade  

SciTech Connect (OSTI)

The CEBAF recirculating CW electron linear accelerator at Jefferson Lab is presently undergoing a major upgrade to 12 GeV. This project includes the fabrication, preparation, and testing of 80 new 7-cell SRF cavities, followed by their incorporation into ten new cryomodules for subsequent testing and installation. In order to maximize the cavity Q over the full operable dynamic range in CEBAF (as high as 25 MV/m), the decision was taken to apply a streamlined preparation process that includes a final light temperature-controlled electropolish of the rf surface over the vendor-provided bulk BCP etch. Cavity processing work began at JLab in September 2010 and will continue through December 2011. The excellent performance results are exceeding project requirements and indicate a fabrication and preparation process that is stable and well controlled. The cavity production and performance experience to date will be summarized and lessons learned reported to the community.

A. Burrill, G.K. Davis, F. Marhauser, C.E. Reece, A.V. Reilly, M. Stirbet

2011-09-01T23:59:59.000Z

437

Progress on Neutron-Target Multipoles above 1 GeV  

SciTech Connect (OSTI)

We report a new extraction of nucleon resonance couplings using ?{sup ?} photo-production cross sections on the neutron. The world database for the process ?n ? ?{sup ?}p above 1 GeV has quadrupled with the addition of new differential cross sections from the CEBAF Large Acceptance Spectrometer (CLAS) at Jefferson Lab in Hall B. Differential cross sections from CLAS have been improved with a new final-state interaction determination using a diagrammatic technique taking into account the SAID phenomenological NN and ?N final-state interaction amplitudes. Resonance couplings have been extracted and compared to previous determinations. With the addition of these new cross sections, significant changes are seen in the high-energy behavior of the SAID cross sections and amplitudes.

Strakovsky, I I; Gao, H; Briscoe, W J; Dutta, D; Kudryavtsev, A E; Mirazite, M; Paris, M; Rossi, P; Stepanyan, S; Tarasov, V E

2012-12-01T23:59:59.000Z

438

1 to 2 GeV/c beam line for hypernuclear and kaon research  

SciTech Connect (OSTI)

A kaon beam line operating in the range from 1.0 to 2.0 GeV/c is proposed. The line is meant for kaon and pion research in a region hitherto inaccessible to experimenters. Topics in hypernuclear and kaon physics of high current interest include the investigation of doubly strange nuclear systems with the K/sup -/,K/sup +/ reaction, searching for dibaryon resonances, hyperon-nucleon interactions, hypernuclear ..gamma.. rays, and associated production of excited hypernuclei. The beam line would provide separated beams of momentum analyzed kaons at intensities greater than 10/sup 6/ particles per spill with a momentum determined to one part in a thousand. This intensity is an order of magnitude greater than that currently available. 63 references.

Chrien, R.E.

1985-02-15T23:59:59.000Z

439

Gamma radiation-induced refractive index change in Ge- and N-doped silica  

SciTech Connect (OSTI)

We measured the change of the refractive index over a wide wavelength range in Ge- and N-doped high purity (fiber optics grade) silica glasses subjected to gamma irradiation. The radiation-induced change of the refractive index tends to be greater in the infrared part of the spectrum compare to the values measured in the UV-visible part of the spectrum. By means of the Kramers-Kronig relations, we estimate that a weak broadening of the optical vibration band of the silica network adds to this effect. The paper also discusses the difference observed in the spectral behavior of the induced refractive index change for both types of doped glass.

Brichard, Benoit [SCK-CEN-Belgian Nuclear Research Center, Boeretang 200, 2400 Mol (Belgium); Butov, Oleg V.; Golant, Konstantin M. [Fiber Optics Research Center, Russian Academy of Sciences, Vavilov Street 38, 119991 Moscow (Russian Federation); Fernandez Fernandez, Alberto [Masterminds Ltd., rue du Temple 40, CH-2800 Delemont (Switzerland)

2008-03-01T23:59:59.000Z

440

Soft QCD Measurements at 900 GeV and 7 TeV with ATLAS  

E-Print Network [OSTI]

We present results on charged hadron production in proton-proton collisions at the Large Hadron Collider and center of mass energies ps = 900 GeV and 7 TeV in the ATLAS Detector. Charged tracks are measured with high precision in the inner tracking system; track multiplicities, transverse momentum spectrum and the average track transverse momentum as a function of track multiplicity are compared to phenomenological models describing the soft QCD processes participating in the interaction. Although all models approximately describe the data, none show complete agreement, with the deviation between data and Monte Carlo becoming more significant at the the higher center of mass energy and for higher track transverse momentum. These data have been used in the determination of a new optimised model which provides a much improved description of the data.

Proudfoot, J; The ATLAS collaboration

2010-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge osram sylvania" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Exclusive pi^0 electroproduction at W > 2 GeV with CLAS  

SciTech Connect (OSTI)

Exclusive neutral-pion electroproduction (ep-->e'p'pi0) was measured at Jefferson Lab with a 5.75-GeV electron beam and the CLAS detector. Differential cross sections d4sigma/dtdQ2dxBdphipi and structure functions sigmaT+epsilonsigmaL,sigmaTT and ?LT as functions of t were obtained over a wide range of Q2 and xB. The data are compared with Regge and handbag theoretical calculations. Analyses in both frameworks find that a large dominance of transverse processes is necessary to explain the experimental results. For the Regge analysis it is found that the inclusion of vector meson rescattering processes is necessary to bring the magnitude of the calculated and measured structure functions into rough agreement. In the handbag framework, there are two independent calculations, both of which appear to roughly explain the magnitude of the structure functions in terms of transversity generalized parton distributions.

Bedlinskiy, I.; Kubarovsky, V.; Niccolai, S.; Stoler, P.; Adhikari, K.P.; Anderson, M.D.; Pereira, S. Anefalos; Avakian, H.; Ball, J.; Baltzell, N.A.; Battaglieri, M.; Batourine, V.; Biselli, A.S.; Boiarinov, S.; Bono, J.; Briscoe, W.J.; Brooks, W.K.; Burkert, V.D.; Carman, D.S.; Celentano, A.; Chandavar, S.; Colaneri, L.; Cole, P.L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Doughty, D.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fleming, J.A.; Forest, T.A.; Garillon, B.; Garcon, M.; Gavalian, G.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G.P.; Giovanetti, K.L.; Girod, F.X.; Golovatch, E.; Gothe, R.W.; Griffioen, K.A.; Guegan, B.; Guo, L.; Hafidi, K.; Hakobyan, H.; Harrison, N.; Hattawy, M.; Hicks, K.; Holtrop, M.; Ireland, D.G.; Ishkhanov, B.S.; Isupov, E.L.; Jenkins, D.; Jo, H.S.; Joo, K.; Keller, D.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F.J.; Koirala, S.; Kuhn, S.E.; Kuleshov, S.V.; Lenisa, P.; Levine, W.I.; Livingston, K.; Lu, H.Y.; MacGregor, I.J.D.; Markov, N.; Mayer, M.; McKinnon, B.; Mirazita, M.; Mokeev, V.; Montgomery, R.A.; Moody, C.I.; Moutarde, H.; Movsisyan, A; Munoz Camacho, C.; Nadel-Turonski, P.; Niculescu, I.; Osipenko, M.; Ostrovidov, A.I.; Pappalardo, L.L.; Park, K.; Park, S.; Pasyuk, E.; Phelps, E.; Phelps, W.; Phillips, J.J.; Pisano, S.; Pogorelko, O.; Price, J.W.; Prok, Y.; Protopopescu, D.; Procureur, S.; Puckett, A.J.R.; Raue, B.A.; Ripani, M.; Ritchie, B.G.; Rizzo, A.; Rossi, P.; Roy, P.; Sabati, F.; Salgado, C.; Schott, D.; Schumacher, R.A.; Seder, E.; Senderovich, I.; Sharabian, Y.G.; Simonyan, A.; Smith, G.D.; Sober, D.I.; Sokhan, D.; Stepanyan, S.S.; Strauch, S.; Sytnik, V.; Tang, W.; Tian, Ye; Ungaro, M.; Vlassov, A.V.; Voskanyan, H.; Voutier, E.; Walford, N.K.; Watts, D.; Wei, X.; Weinstein, L.B.; Yurov, M.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z.W.; Zonta, I.

2014-08-01T23:59:59.000Z

442

Nuclear structure studies of medium-mass nuclei using large Ge arrays  

SciTech Connect (OSTI)

The advent of large Ge arrays and their ancillary detectors has greatly advanced spectroscopic studies of the medium-mass nuclei. These nuclei undergo rapid shape changes as a function of spin, excitation energy and particle number and, thus, provide a unique laboratory to test and refine a variety of theoretical models. Following a brief review of the physics motivation, some of the highlights of the experimental results obtained with the help of these powerful detector systems will be discussed. Among results presented here are the newly-discovered island of superdeformation in the A{approximately}80 mass region, and the high-spin band structures in the N{approximately}Z nuclei. These band structures may be understood in the framework of the conventional cranking models, without the introduction of additional T=0 neutron-proton pairing correlations.

Baktash, C.

1996-12-31T23:59:59.000Z

443

Nuclear Structure Relevant to Neutrinoless Double Beta Decay: 76Ge and 76Se  

E-Print Network [OSTI]

The possibility of observing neutrinoless double beta decay offers the opportunity of determining the neutrino mass IF the nuclear matrix element were known. Theoretical calculations are uncertain and measurements of the occupations of valence orbits by nucleons active in the decay can be important. The occupation of valence neutron orbits in the ground states of 76Ge and 76Se were determined by precisely measuring cross sections for both neutron-adding and removing transfer reactions. Our results indicate that the Fermi surface is much more diffuse than in theoretical (QRPA) calculations. We find that the populations of at least three orbits change significantly between these two ground states while in the calculations the changes are confined primarily to one orbit.

J. P. Schiffer; S. J. Freeman; J. A. Clark; C. Deibel; C. R. Fitzpatrick; S. Gros; A. Heinz; D. Hirata; C. L. Jiang; B. P. Kay; A. Parikh; P. D. Parker; K. E. Rehm; A. C. C. Villari; V. Werner; C. Wrede

2007-10-03T23:59:59.000Z

444

Ultrafast terahertz-induced response of GeSbTe phase-change materials  

SciTech Connect (OSTI)

The time-resolved ultrafast electric field-driven response of crystalline and amorphous GeSbTe films has been measured all-optically, pumping with single-cycle terahertz pulses as a means of biasing phase-change materials on a sub-picosecond time-scale. Utilizing the near-band-gap transmission as a probe of the electronic and structural response below the switching threshold, we observe a field-induced heating of the carrier system and resolve the picosecond-time-scale energy relaxation processes and their dependence on the sample annealing condition in the crystalline phase. In the amorphous phase, an instantaneous electroabsorption response is observed, quadratic in the terahertz field, followed by field-driven lattice heating, with Ohmic behavior up to 200?kV/cm.

Shu, Michael J. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Zalden, Peter [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Chen, Frank [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Weems, Ben [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Chatzakis, Ioannis [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Xiong, Feng; Jeyasingh, Rakesh; Pop, Eric; Philip Wong, H.-S. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States); Hoffmann, Matthias C. [SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Wuttig, Matthias [I. Physikalisches Institut, RWTH Aachen University, 52056 Aachen (Germany); JARAFundamentals of Information Technology, RWTH Aachen University, 52056 Aachen (Germany); Lindenberg, Aaron M., E-mail: aaronl@stanford.edu [Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); PULSE Institute, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)

2014-06-23T23:59:59.000Z

445

Nuclear Structure Relevant to Neutrinoless Double {beta} Decay: {sup 76}Ge and {sup 76}Se  

SciTech Connect (OSTI)

The possibility of observing neutrinoless double {beta} decay offers the opportunity of determining the effective neutrino mass if the nuclear matrix element were known. Theoretical calculations are uncertain, and measurements of the occupations of valence orbits by nucleons active in the decay can be important. The occupation of valence neutron orbits in the ground states of {sup 76}Ge (a candidate for such decay) and {sup 76}Se (the daughter nucleus) were determined by precisely measuring cross sections for both neutron-adding and removing transfer reactions. Our results indicate that the Fermi surface is much more diffuse than in theoretical calculations. We find that the populations of at least three orbits change significantly between these two ground states while in the calculations, the changes are confined primarily to one orbit.

Schiffer, J. P.; Gros, S.; Jiang, C. L.; Rehm, K. E. [Physics Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Freeman, S. J.; Fitzpatrick, C. R.; Kay, B. P. [University of Manchester, Manchester M13 9PL (United Kingdom); Clark, J. A.; Deibel, C.; Heinz, A.; Parikh, A.; Parker, P. D.; Werner, V.; Wrede, C. [Yale University, New Haven, Connecticut 06520 (United States); Hirata, D. [GANIL (IN2P3/CNRS -DSM/CEA), B.P. 55027 14076 Caen Cedex 5 (France); Dept. of Physics and Astronomy, Open University, Milton Keynes, MK7 6AA (United Kingdom); Villari, A. C. C. [GANIL (IN2P3/CNRS -DSM/CEA), B.P. 55027 14076 Caen Cedex 5 (France)

2008-03-21T23:59:59.000Z

446

Preparation and Testing of the SRF Cavities for the CEBAF 12 GeV Upgrade  

SciTech Connect (OSTI)

Eighty new 7-cell, low-loss cell-shaped cavities are required for the CEBAF 12 GeV Upgrade project. In addition to ten pre-production units fabricated at JLab, the full set of commercially-produced cavities have been delivered. An efficient processing routine, which includes a controlled 30 micron electropolish, has been established to transform these cavities into qualified 8-cavity strings. This work began in 2010 and will run through the end of 2011. The realized cavity performance consistently exceeds project requirements and also the maximum useful gradient in CEBAF: 25 MV/m. We will describe the cavity processing and preparation protocols and summarize test results obtained to date.

Reilly, A. V.; Bass, T.; Burrill, A.; Davis, G. K.; Marhauser, F.; Reece, C. E.; Stirbet, M.

2011-07-01T23:59:59.000Z

447

Collective flow in Ar+KCl at 1. 8 GeV/nucleon  

SciTech Connect (OSTI)

The failure of the standard sphericity tensor analysis to detect any significant collective flow effect in Ar+KCl at 1.8A GeV is examined in light of the success of the transverse momentum analysis technique suggested by Danielewicz and Odyniec in exhibiting collective flow in the same system. It is argued, using a simple estimate which takes into consideration the main features of the data, that the failure of the sphericity analysis is attributable to the dominant contribution of the longitudinal momentum of the spectators which has nothing to do with the collective effects for which sphericity analysis is designed. The exclusion of the spectators from the sphericity tensor leads to a clear signal from the collective transverse flow of the participants whenever such a flow takes place.

Jaqaman, H.R.

1986-06-01T23:59:59.000Z

448

Upsilon cross section in p+p collisions at sqrt(s) = 200 GeV  

E-Print Network [OSTI]

We report on a measurement of the Upsilon(1S+2S+3S) -> e+e- cross section at midrapidity in p+p collisions at sqrt(s)=200 GeV. We find the cross section to be 114 +/- 38 (stat.) +23,-24 (syst.) pb. Perturbative QCD calculations at next-to-leading order in the Color Evaporation Model are in agreement with our measurement, while calculations in the Color Singlet Model underestimate it by 2 sigma. Our result is consistent with the trend seen in world data as a function of the center-of-mass energy of the collision and extends the availability of Upsilon data to RHIC energies. The dielectron continuum in the invariant mass range near the Upsilon is also studied to obtain a combined cross section of Drell-Yan plus (b b-bar) -> e+e-.

STAR Collaboration; B. I. Abelev; M. M. Aggarwal; Z. Ahammed; A. V. Alakhverdyants; B. D. Anderson; D. Arkhipkin; G. S. Averichev; J. Balewski; L. S. Barnby; S. Baumgart; D. R. Beavis; R. Bellwied; M. J. Betancourt; R. R. Betts; A. Bhasin; A. K. Bhati; H. Bichsel; J. Bielcik; J. Bielcikova; B. Biritz; L. C. Bland; B. E. Bonner; J. Bouchet; E. Braidot; A. V. Brandin; A. Bridgeman; E. Bruna; S. Bueltmann; I. Bunzarov; T. P. Burton; X. Z. Cai; H. Caines; M. Caldern de la Barca Snchez; O. Catu; D. Cebra; R. Cendejas; M. C. Cervantes; Z. Chajecki; P. Chaloupka; S. Chattopadhyay; H. F. Chen; J. H. Chen; J. Y. Chen; J. Cheng; M. Cherney; A. Chikanian; K. E. Choi; W. Christie; P. Chung; R. F. Clarke; M. J. M. Codrington; R. Corliss; J. G. Cramer; H. J. Crawford; D. Das; S. Dash; A. Davila Leyva; L. C. De Silva; R. R. Debbe; T. G. Dedovich; M. DePhillips; A. A. Derevschikov; R. Derradi de Souza; L. Didenko; P. Djawotho; S. M. Dogra; X. Dong; J. L. Drachenberg; J. E. Draper; J. C. Dunlop; M. R. Dutta Mazumdar; L. G. Efimov; E. Elhalhuli; M. Elnimr; J. Engelage; G. Eppley; B. Erazmus; M. Estienne; L. Eun; O. Evdokimov; P. Fachini; R. Fatemi; J. Fedorisin; R. G. Fersch; P. Filip; E. Finch; V. Fine; Y. Fisyak; C. A. Gagliardi; D. R. Gangadharan; M. S. Ganti; E. J. Garcia-Solis; A. Geromitsos; F. Geurts; V. Ghazikhanian; P. Ghosh; Y. N. Gorbunov; A. Gordon; O. Grebenyuk; D. Grosnick; B. Grube; S. M. Guertin; A. Gupta; N. Gupta; W. Guryn; B. Haag; T. J. Hallman; A. Hamed; L-X. Han; J. W. Harris; J. P. Hays-Wehle; M. Heinz; S. Heppelmann; A. Hirsch; E. Hjort; A. M. Hoffman; G. W. Hoffmann; D. J. Hofman; R. S. Hollis; H. Z. Huang; T. J. Humanic; L. Huo; G. Igo; A. Iordanova; P. Jacobs; W. W. Jacobs; P. Jakl; C. Jena; F. Jin; C. L. Jones; P. G. Jones; J. Joseph; E. G. Judd; S. Kabana; K. Kajimoto; K. Kang; J. Kapitan; K. Kauder; D. Keane; A. Kechechyan; D. Kettler; D. P. Kikola; J. Kiryluk; A. Kisiel; A. G. Knospe; A. Kocoloski; D. D. Koetke; T. Kollegger; J. Konzer; M. Kopytine; I. Koralt; W. Korsch; L. Kotchenda; V. Kouchpil; P. Kravtsov; K. Krueger; M. Krus; L. Kumar; P. Kurnadi; M. A. C. Lamont; J. M. Landgraf; S. LaPointe; J. Lauret; A. Lebedev; R. Lednicky; C-H. Lee; J. H. Lee; W. Leight; M. J. LeVine; C. Li; L. Li; N. Li; W. Li; X. Li; X. Li; Y. Li; Z. Li; G. Lin; S. J. Lindenbaum; M. A. Lisa; F. Liu; H. Liu; J. Liu; T. Ljubicic; W. J. Llope; R. S. Longacre; W. A. Love; Y. Lu; G. L. Ma; Y. G. Ma; D. P. Mahapatra; R. Majka; O. I. Mall; L. K. Mangotra; R. Manweiler; S. Margetis; C. Markert; H. Masui; H. S. Matis; Yu. A. Matulenko; D. McDonald; T. S. McShane; A. Meschanin; R. Milner; N. G. Minaev; S. Mioduszewski; A. Mischke; M. K. Mitrovski; B. Mohanty; M. M. Mondal; D. A. Morozov; M. G. Munhoz; B. K. Nandi; C. Nattrass; T. K. Nayak; J. M. Nelson; P. K. Netrakanti; M. J. Ng; L. V. Nogach; S. B. Nurushev; G. Odyniec; A. Ogawa; H. Okada; V. Okorokov; D. Olson; M. Pachr; B. S. Page; S. K. Pal; Y. Pandit; Y. Panebratsev; T. Pawlak; T. Peitzmann; V. Perevoztchikov; C. Perkins; W. Peryt; S. C. Phatak; P. Pile; M. Planinic; M. A. Ploskon; J. Pluta; D. Plyku; N. Poljak; A. M. Poskanzer; B. V. K. S. Potukuchi; C. B. Powell; D. Prindle; C. Pruneau; N. K. Pruthi; P. R. Pujahari; J. Putschke; R. Raniwala; S. Raniwala; R. L. Ray; R. Redwine; R. Reed; J. M. Rehberg; H. G. Ritter; J. B. Roberts; O. V. Rogachevskiy; J. L. Romero; A. Rose; C. Roy; L. Ruan; R. Sahoo; S. Sakai; I. Sakrejda; T. Sakuma; S. Salur; J. Sandweiss; E. Sangaline; J. Schambach; R. P. Scharenberg; N. Schmitz; T. R. Schuster; J. Seele; J. Seger; I. Selyuzhenkov; P. Seyboth; E. Shahaliev; M. Shao; M. Sharma; S. S. Shi; E. P. Sichtermann; F. Simon; R. N. Singaraju; M. J. Skoby; N. Smirnov; P. Sorensen; J. Sowinski; H. M. Spinka; B. Srivastava; T. D. S. Stanislaus; D. Staszak; J. R. Stevens; R. Stock; M. Strikhanov; B. Stringfellow; A. A. P. Suaide; M. C. Suarez; N. L. Subba; M. Sumbera; X. M. Sun; Y. Sun; Z. Sun; B. Surrow; T. J. M. Symons; A. Szanto de Toledo; J. Takahashi; A. H. Tang; Z. Tang; L. H. Tarini; T. Tarnowsky; D. Thein; J. H. Thomas; J. Tian; A. R. Timmins; S. Timoshenko; D. Tlusty; M. Tokarev; T. A. Trainor; V. N. Tram; S. Trentalange; R. E. Tribble; O. D. Tsai; J. Ulery; T. Ullrich; D. G. Underwood; G. Van Buren; M. van Leeuwen; G. van Nieuwenhuizen; J. A. Vanfossen Jr.; R. Varma; G. M. S. Vasconcelos; A. N. Vasiliev; F. Videbaek; Y. P. Viyogi; S. Vokal; S. A. Voloshin; M. Wada; M. Walker; F. Wang; G. Wang; H. Wang; J. S. Wang; Q. Wang; X. L. Wang; Y. Wang; G. Webb; J. C. Webb; G. D. Westfall; C. Whitten Jr.; H. Wieman; E. Wingfield; S. W. Wissink; R. Witt; Y. Wu; W. Xie; N. Xu; Q. H. Xu; W. Xu; Y. Xu; Z. Xu; L. Xue; Y. Yang; P. Yepes; K. Yip; I-K. Yoo; Q. Yue; M. Zawisza; H. Zbroszczyk; W. Zhan; S. Zhang; W. M. Zhang; X. P. Zhang; Y. Zhang; Z. P. Zhang; J. Zhao; C. Zhong; J. Zhou; W. Zhou; X. Zhu; Y. H. Zhu

2010-05-10T23:59:59.000Z

449

Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals  

SciTech Connect (OSTI)

Ferroelectrics and other materials that exhibit spontaneous polar ordering have demonstrated immense promise for applications ranging from non-volatile memories to microelectromechanical systems. However, experimental evidence of polar ordering and effective synthetic strategies for accessing these materials are lacking for low-dimensional nanomaterials. Here, we demonstrate the synthesis of size-controlled nanocrystals of the polar material germanium telluride (GeTe) using colloidal chemistry and provide the first direct evidence of room-temperature polar ordering in nanocrystals less than 5 nm in size using aberration-corrected transmission electron microscopy. Synchrotron x-ray diffraction and Raman studies demonstrate a sizeable polar distortion and a reversible size-dependent polar phase transition in these nanocrystals. The stability of polar ordering in solution-processible nanomaterials suggests an economical avenue to Tbit/in2-density non-volatile memory devices and other applications.

Polking, Mark J.; Zheng, Haimei; Urban, Jeffrey J.; Milliron, Delia J.; Chan, Emory; Caldwell, Marissa A.; Raoux, Simone; Kisielowski, Christian F.; Ager III, Joel W.; Ramesh, Ramamoorthy; Alivisatos, A.P.

2009-12-07T23:59:59.000Z

450

Concerning the energy levels of silver in Ge-Si alloys  

SciTech Connect (OSTI)

The emission from impurity states of silver (an element of the IB subgroup) in a Ge-Si alloy, containing 18 at % Si, has been studied. The donor level of silver has been found in crystals doubly doped with gallium and silver, while its first acceptor level has been revealed in crystals doped with only silver. Single crystals were grown by pulling from a melt using a feeding rod. Doping with gallium was performed by introducing this element into the feeding rod, and silver was introduced into the crystals via diffusion. The positions of the donor and first acceptor Ag levels with respect to the top of the valence band were found by analyzing the temperature dependence of the Hall coefficient and the electroneutrality equation for the crystal: 0.06 and 0.29 eV, respectively.

Tahirov, V. I. [Baku State University (Azerbaijan); Agamaliev, Z. A. [National Academy of Sciences of Azerbaijan, Institute of Physics (Azerbaijan); Sadixova, S. R.; Guliev, A. F.; Gahramanov, N. F., E-mail: n_gakhramanov@mail.ru [Sumgait State University (Azerbaijan)

2012-03-15T23:59:59.000Z

451

On the magnetic order of Gd{sub 5}Ge{sub 3}  

SciTech Connect (OSTI)

We have investigated the magnetic structure of Gd{sub 5}Ge{sub 3} by neutron powder diffraction down to 3.6?K. This compound presents three events in the heat capacity which we show are related to fundamental changes in the magnetic order. The primary antiferromagnetic ordering occurs at 82(2) K and produces a magnetic cell that is tripled with respect to the underlying orthorhombic crystal cell. The propagation vector is k{sub 1}=[0?0?1/3 ]. At 74(2) K, the magnetic order becomes anti-C with a propagation vector k{sub 2}?=?[1 0 0]. A third change in the magnetic order occurs at 40(2) K, and the new magnetic structure is essentially the anti-C structure but with the addition of a tripled magnetic component corresponding to a propagation vector k{sub 3}?=?[1/3 ?0?0].

Cadogan, J. M. [School of Physical, Environmental and Mathematical Sciences, UNSW Canberra at the Australian Defence Force Academy, Canberra, ACT BC 2610 (Australia); Ryan, D. H., E-mail: dhryan@physics.mcgill.ca [Physics Department and Centre for the Physics of Materials, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada); Mudryk, Ya.; Pecharsky, V. K.; Gschneidner, K. A. [Ames Laboratory of the U.S. Department of Energy, Iowa State University, Ames, Iowa 50011-3020, USA and Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011-2300 (United States)

2014-05-07T23:59:59.000Z

452

1 GeV CW nonscaling FFAG for ADS, and magnet parameters  

SciTech Connect (OSTI)

Multi-MW proton driver capability remains a challenging, critical technology for many core HEP programs, particularly the neutrino ones such as the Muon Collider and Neutrino factory, and for high-profile energy applications such as Accelerator Driven Subcritical Reactors (ADS) and Accelerator Transmutation of Waste for nuclear power and waste management. Work is focused almost exclusively on an SRF linac, as, to date, no re-circulating accelerator can attain the 10-20 MW capability necessary for the nuclear applications. Recently, the concept of isochronous orbits has been explored and developed for nonscaling FFAGs using powerful new methodologies in FFAG accelerator design. Work is progressing on a stable, high-intensity, 1 GeV isochronous FFAG. Initial specifications of novel magnets with the nonlinear radial fields required to support isochronous operation are also reported here.

Johnstone C.; Meot, F.; Snopok, P.; Weng, W.

2012-05-20T23:59:59.000Z

453

Multi-GeV Neutrino Emission from Magnetized Gamma Ray Bursts  

E-Print Network [OSTI]

We investigate the expected neutrino emissivity from nuclear collisions in magnetically dominated collisional models of gamma-ray bursts, motivated by recent observational and theoretical developments. The results indicate that significant multi-GeV neutrino fluxes are expected for model parameter values which are typical of electromagnetically detected bursts. We show that for detecting at least one muon event in Icecube and its Deep Core sub-array, a single burst must be near the high end of the luminosity function and at a redshift $z\\lesssim 0.2$. We also calculate the luminosity and distance ranges that can generate $0.01-1$ muon events per GRB in the same detectors, which may be of interest if simultaneously detected electromagnetically, or if measured with future extensions of Icecube or other neutrino detectors with larger effective volume and better sensitivity.

Shan Gao; Peter Meszaros

2012-04-20T23:59:59.000Z

454

Medium effects in proton-induced $K^{0}$ production at 3.5 GeV  

E-Print Network [OSTI]

We present the analysis of the inclusive $K^{0}$ production in p+p and p+Nb collisions measured with the HADES detector at a beam kinetic energy of 3.5 GeV. Data are compared to the GiBUU transport model. The data suggest the presence of a repulsive momentum-dependent kaon potential as predicted by the Chiral Perturbation Theory (ChPT). For the kaon at rest and at normal nuclear density, the ChPT potential amounts to $\\approx 35$ MeV. A detailed tuning of the kaon production cross sections implemented in the model has been carried out to reproduce the experimental data measured in p+p collisions. The uncertainties in the parameters of the model were examined with respect to the sensitivity of the experimental results from p+Nb collisions to the in-medium kaon potential.

G. Agakishiev; O. Arnold; D. Belver; A. Belyaev; J. C. Berger-Chen; A. Blanco; M. Bhmer; J. L. Boyard; P. Cabanelas; S. Chernenko; A. Dybczak; E. Epple; L. Fabbietti; O. Fateev; P. Finocchiaro; P. Fonte; J. Friese; I. Frhlich; T. Galatyuk; J. A. Garzn; R. Gernhuser; K. Gbel; M. Golubeva; D. Gonzlez-Daz; F. Guber; M. Gumberidze; T. Heinz; T. Hennino; R. Holzmann; A. Ierusalimov; I. Iori; A. Ivashkin; M. Jurkovic; B. Kmpfer; T. Karavicheva; I. Koenig; W. Koenig; B. W. Kolb; G. Korcyl; G. Kornakov; R. Kotte; A. Krsa; F. Krizek; R. Krcken; H. Kuc; W. Khn; A. Kugler; T. Kunz; A. Kurepin; V. Ladygin; R. Lalik; K. Lapidus; A. Lebedev; L. Lopes; M. Lorenz; L. Maier; A. Mangiarotti; J. Markert; V. Metag; J. Michel; C. Mntz; R. Mnzer; L. Naumann; Y. C. Pachmayer; M. Palka; Y. Parpottas; V. Pechenov; O. Pechenova; J. Pietraszko; W. Przygoda; B. Ramstein; A. Reshetin; A. Rustamov; A. Sadovsky; P. Salabura; A. Schmah; E. Schwab; J. Siebenson; Yu. G. Sobolev; B. Spruck; H. Strbele; J. Stroth; C. Sturm; A. Tarantola; K. Teilab; P. Tlusty; M. Traxler; H. Tsertos; T. Vasiliev; V. Wagner; M. Weber; C. Wendisch; J. Wstenfeld; S. Yurevich; Y. Zanevsky; . T. Gaitanos; J. Weil

2014-04-29T23:59:59.000Z

455

Study of the pp-> np+ reaction at 1.25 GeV with HADES  

E-Print Network [OSTI]

In pp collisions at 1.25 GeV kinetic energy, the HADES collaboration aimed at investigating the di-electron production related to (1232) Dalitz decay ( + ! pe+e?). In order to constrain the models predicting the cross section and the production mechanisms of resonance, the hadronic channels have been measured and studied in parallel to the leptonic channels. The analyses of pp ! np + and pp ! pp 0 channels and the comparison to simulations are presented in this contribution, in particular the angular distributions being sensitive to production and decay. The accurate acceptance corrections have been performed as well, which could be tested in all the phase space region thanks to the high statistic data. These analyses result in an overall agreement with the one- exchange model and previous data.

Liu, T; Agakishiev, G; Agodi, C; Balanda, A; Bellia, G; Belver, D; Belyaev, A; Blanco, A; Bhmer, M; Boyard, J L; Braun-Munzinger, P; Cabanelas, P; Castro, E; Christ, T; Destefanis, M; Daz, J; Dohrmann, F; Dybczak, A; Fabbietti, L; Fateev, O; Finocchiaro, P; Fonte, P; Friese, J; Frhlich, I; Galatyuk, T; Garzn, J A; Gernhuser, R; Gil, A; Gilardi, C; Golubeva, M; Gonzlez-Daz, D; Grosse, E; Guber, F; Heilmann, M; Hennino, T; Holzmann, R; Ierusalimov, A; Iori, I; Ivashkin, A; Jurkovic, M; Kmpfer, B; Kanaki, K; Karavicheva, T; Kirschner, D; Koenig, I; Koenig, W; Kolb, B W; Kotte, R; Kozuch, A; Krsa, A; Krek, F; Krcken, R; Khn, W; Kugler, A; Kurepin, A; Lamas-Valverde, J; Lang, S; Lange, J S; Lapidus, K; Lopes, L; Lorenz, M; Maier, L; Mangiarotti, A; Marn, J; Markert, J; Metag, V; Michalska, B; Michel, J; Mishra, D; Morini?re, E; Mousa, J; Mntz, C; Naumann, L; Novotny, R; Otwinowski, J; Pachmayer, Y C; Palka, M; Parpottas, Y; Pechenov, V; Pechenova, O; Prez Cavalcanti, T; Pietraszko, J; Przygoda, W; Ramstein, B; Reshetin, A; Rustamov, A; Sadovsky, A; Salabura, P; Schmah, A; Simon, R; Sobolev, Yu G; Spataro, S; Spruck, B; Strbele, H; Stroth, J; Sturm, C; Sudol, M; Tarantola, A; Teilab, K; Tlust, P; Traxler, M; Trebacz, R; Tsertos, H; Veretenkin, I; Wagner, V; Weber, M; Wisniowski, M; Wstenfeld, J; Yurevich, S; Zanevsky, Y V; Zhou, P; Zumbruch, P

2010-01-01T23:59:59.000Z

456

Study of the $pp \\to np?^+$ reaction at 1.25 GeV with HADES  

E-Print Network [OSTI]

In pp collisions at 1.25 GeV kinetic energy, the HADES collaboration aimed at investigating the di-electron production related to $\\Delta$ (1232) Dalitz decay ($\\Delta^+ \\to pe^+e^-$). In order to constrain the models predicting the cross section and the production mechanisms of $\\Delta$ resonance, the hadronic channels have been measured and studied in parallel to the leptonic channels. The analyses of $pp\\to np\\pi^+$ and $pp\\to pp\\pi^0$ channels and the comparison to simulations are presented in this contribution, in particular the angular distributions being sensitive to $\\Delta$ production and decay. The accurate acceptance corrections have been performed as well, which could be tested in all the phase space region thanks to the high statistic data. These analyses result in an overall agreement with the one-$\\pi$ exchange model and previous data.

T. Liu; for the HADES collaboration

2009-09-18T23:59:59.000Z

457

Active magnetic refrigerants based on Gd-Si-Ge material and refrigeration apparatus and process  

DOE Patents [OSTI]

Active magnetic regenerator and method using Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4, where x is equal to or less than 0.5, as a magnetic refrigerant that exhibits a reversible ferromagnetic/antiferromagnetic or ferromagnetic-II/ferromagnetic-I first order phase transition and extraordinary magneto-thermal properties, such as a giant magnetocaloric effect, that renders the refrigerant more efficient and useful than existing magnetic refrigerants for commercialization of magnetic regenerators. The reversible first order phase transition is tunable from approximately 30 K to approximately 290 K (near room temperature) and above by compositional adjustments. The active magnetic regenerator and method can function for refrigerating, air conditioning, and liquefying low temperature cryogens with significantly improved efficiency and operating temperature range from approximately 10 K to 300 K and above. Also an active magnetic regenerator and method using Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4, where x is equal to or greater than 0.5, as a magnetic heater/refrigerant that exhibits a reversible ferromagnetic/paramagnetic second order phase transition with large magneto-thermal properties, such as a large magnetocaloric effect that permits the commercialization of a magnetic heat pump and/or refrigerant. This second order phase transition is tunable from approximately 280 K (near room temperature) to approximately 350 K by composition adjustments. The active magnetic regenerator and method can function for low level heating for climate control for buildings, homes and automobile, and chemical processing.

Gschneidner, Jr., Karl A. (Ames, IA); Pecharsky, Vitalij K. (Ames, IA)

1998-04-28T23:59:59.000Z

458

Active magnetic refrigerants based on Gd-Si-Ge material and refrigeration apparatus and process  

DOE Patents [OSTI]

Active magnetic regenerator and method using Gd{sub 5} (Si{sub x}Ge{sub 1{minus}x}){sub 4}, where x is equal to or less than 0.5, as a magnetic refrigerant that exhibits a reversible ferromagnetic/antiferromagnetic or ferromagnetic-II/ferromagnetic-I first order phase transition and extraordinary magneto-thermal properties, such as a giant magnetocaloric effect, that renders the refrigerant more efficient and useful than existing magnetic refrigerants for commercialization of magnetic regenerators. The reversible first order phase transition is tunable from approximately 30 K to approximately 290 K (near room temperature) and above by compositional adjustments. The active magnetic regenerator and method can function for refrigerating, air conditioning, and liquefying low temperature cryogens with significantly improved efficiency and operating temperature range from approximately 10 K to 300 K and above. Also an active magnetic regenerator and method using Gd{sub 5} (Si{sub x} Ge{sub 1{minus}x}){sub 4}, where x is equal to or greater than 0.5, as a magnetic heater/refrigerant that exhibits a reversible ferromagnetic/paramagnetic second order phase transition with large magneto-thermal properties, such as a large magnetocaloric effect that permits the commercialization of a magnetic heat pump and/or refrigerant. This second order phase transition is tunable from approximately 280 K (near room temperature) to approximately 350 K by composition adjustments. The active magnetic regenerator and method can function for low level heating for climate control for buildings, homes and automobile, and chemical processing. 27 figs.

Gschneidner, K.A. Jr.; Pecharsky, V.K.

1998-04-28T23:59:59.000Z

459

Energy Doubling of 42 GeV Electrons in a Meter-scale Plasma Wakefield Accelerator  

SciTech Connect (OSTI)

The energy frontier of particle physics is several trillion electron volts, but colliders capable of reaching this regime (such as the Large Hadron Collider and the International Linear Collider) are costly and time-consuming to build; it is therefore important to explore new methods of accelerating particles to high energies. Plasma-based accelerators are particularly attractive because they are capable of producing accelerating fields that are orders of magnitude larger than those used in conventional colliders. In these accelerators, a drive beam (either laser or particle) produces a plasma wave (wakefield) that accelerates charged particles. The ultimate utility of plasma accelerators will depend on sustaining ultrahigh accelerating fields over a substantial length to achieve a significant energy gain. Here we show that an energy gain of more than 42 GeV is achieved in a plasma wakefield accelerator of 85 cm length, driven by a 42 GeV electron beam at the Stanford Linear Accelerator Center (SLAC). The results are in excellent agreement with the predictions of three-dimensional particle-in-cell simulations. Most of the beam electrons lose energy to the plasma wave, but some electrons in the back of the same beam pulse are accelerated with a field of {approx} 52GV m{sup -1}. This effectively doubles their energy, producing the energy gain of the 3-km-long SLAC accelerator in less than a meter for a small fraction of the electrons in the injected bunch. This is an important step towards demonstrating the viability of plasma accelerators for high-energy physics applications.

Blumenfeld, Ian; Clayton, Christopher E.; Decker, Franz-Josef; Hogan, Mark J.; Huang, Chengkun; Ischebeck, Rasmus; Iverson, Richard; Joshi, Chandrashekhar; Katsouleas,; Kirby, Neil; Lu, Wei; Marsh, Kenneth A.; Mori, Warren B.; Muggli, Patric; Oz, Erdem; Siemann, Robert H.; Walz, Dieter; Zhou, Miaomiao; /SLAC /UCLA /Southern California U.

2007-03-14T23:59:59.000Z

460

Neutron energy spectrum from 120 GeV protons on a thick copper target  

E-Print Network [OSTI]

Neutron energy spectrum from 120 GeV protons on a thick copper target was measured at the Meson Test Beam Facility (MTBF) at Fermi National Accelerator Laboratory. The data allows for evaluation of neutron production process implemented in theoretical simulation codes. It also helps exploring the reasons for some disagreement between calculation results and shielding benchmark data taken at high energy accelerator facilities, since it is evaluated separately from neutron transport. The experiment was carried out using a 120 GeV proton beam of 3E5 protons/spill. Since the spill duration was 4 seconds, proton-induced events were counted pulse by pulse. The intensity was maintained using diffusers and collimators installed in the beam line to MTBF. The protons hit a copper block target the size of which is 5cm x 5cm x 60 cm long. The neutrons produced in the target were measured using NE213 liquid scintillator detectors, placed about 5.5 m away from the target at 30^{\\circ} and 5 m 90^{\\circ} with respect to the proton beam axis. The neutron energy was determined by time-of-flight technique using timing difference between the NE213 and a plastic scintillator located just before the target. Neutron detection efficiency of NE213 was determined on basis of experimental data from the high energy neutron beam line at Los Alamos National Laboratory. The neutron spectrum was compared with the results of multi-particle transport codes to validate the implemented theoretical models. The apparatus would be applied to future measurements to obtain a systematic data set for secondary particle production on various target materials.

Nobuhiro Shigyo; Toshiya Sanami; Tsuyoshi Kajimoto; Yosuke Iwamoto; Masayuki Hagiwara; Kiwamu Saito; Kenji Ishibashi; Hiroshi Nakashima; Yukio Sakamoto; Hee-Seock Lee; Erik Ramberg; Aria A. Meyhoefer; Rick Coleman; Doug Jensen; Anthony F. Leveling; David J. Boehnlein; Nikolai V. Mokhov

2012-02-07T23:59:59.000Z

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461

Scale Up of Si/Si0.8GE0.2 and B4C/B9C Superlattices for Harvesting...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat in Diesel Engines Scale Up of SiSi0.8GE0.2 and B4CB9C Superlattices for Harvesting of Waste Heat...

462

Precise measurement of the neutron magnetic form factor GMn [G superscript n subscript M] in the Few-GeV2 [V superscript 2] region  

E-Print Network [OSTI]

The neutron elastic magnetic form factor was extracted from quasielastic electron scattering on deuterium over the range Q2=1.04.8 [Q superscript 2 = 1.0-4.8] ??GeV2 [Ge V superscript 2] with the CLAS detector at Jefferson ...

Rowntree, D.

463

Spin alignment measurements of the K*(0)(892) and phi(1020) vector mesons in heavy ion collisions at root S(NN)=200 GeV  

E-Print Network [OSTI]

We present the first spin alignment measurements for the K*(0)(892) and phi(1020) vector mesons produced at midrapidity with transverse momenta up to 5 GeV/c at root s(NN) = 200 GeV at RHIC. The diagonal spin-density matrix elements with respect...

Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betts, R. R.; Bhardwaj, S.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bueltmann, S.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Callner, J.; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Chung, S. U.; Clarke, R. F.; Codrington, M. J. M.; Coffin, J. P.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; de Moura, M. M.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Edwards, W. R.; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gaillard, L.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Hughes, E. W.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jin, F.; Jones, P. G.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Kuhn, C.; Kumar, A.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; Lange, S.; LaPointe, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C-H; LeVine, M. J.; Li, C.; Li, Y.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, G. L.; Ma, J. G.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Matis, H. S.; Matulenko, Yu A.; McShane, T. S.; Meschanin, A.; Millane, J.; Miller, M. L.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mitchell, J.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Nepali, C.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Pal, S. K.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Porile, N.; Poskanzer, A. M.; Potekhin, M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Putschke, J.; Qattan, I. A.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Rykov, V.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Shi, X-H; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Staszak, D.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trattner, A. L.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; Van der Kolk, N.; van Leeuwen, M.; Molen, A. M. Vander; Varma, R.; Vasconcelos, G. M. S.; Vasilevski, I. M.; Vasiliev, A. N.; Videbaek, F.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Waggoner, W. T.; Wang, F.; Wang, G.; Wang, J. S.

2008-01-01T23:59:59.000Z

464

J/psi production at high transverse momenta in p plus p and Cu plus Cu collisions at root s(NN)=200 GeV  

E-Print Network [OSTI]

The STAR Collaboration at the Relativistic Heavy Ion Collider presents measurements of J/psi e(+) e(-) at midrapidity and high transverse momentum (pT > 5 GeV/c) in p + p and central Cu + Cu collisions at root s(NN) = 200 GeV. The inclusive J...

Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Beavis, D. R.; Bellwied, R.; Benedosso, F.; Betancourt, M. J.; Betts, R. R.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Biritz, B.; Bland, L. C.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Braidot, E.; Brandin, A. V.; Bruna, E.; Bueltmann, S.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; Sanchez, M. Calderon de la Barca; Catu, O.; Cebra, D.; Cendejas, R.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, K. E.; Christie, W.; Clarke, R. F.; Codrington, M. J. M.; Corliss, R.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; De Silva, L. C.; Dedovich, T. G.; DePhillips, M.; Derevschikov, A. A.; de Souza, R. Derradi; Didenko, L.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Mazumdar, M. R. Dutta; Edwards, W. R.; Efimov, L. G.; Elhalhuli, E.; Elnimr, M.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Eun, L.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Gagliardi, Carl A.; Gaillard, L.; Gangadharan, D. R.; Ganti, M. S.; Garcia-Solis, E. J.; Geromitsos, A.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gordon, A.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Guryn, W.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Huang, H. Z.; Humanic, T. J.; Huo, L.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jena, C.; Jin, F.; Jones, C. L.; Jones, P. G.; Joseph, J.; Judd, E. G.; Kabana, S.; Kajimoto, K.; Kang, K.; Kapitan, J.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu; Kikola, D. P.; Kiryluk, J.; Kisiel, A.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kopytine, M.; Korsch, W.; Kotchenda, L.; Kouchpil, V.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Krus, M.; Kuhn, C.; Kumar, L.; Kurnadi, P.; Lamont, M. A. C.; Landgraf, J. M.; LaPointe, S.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C. -H; Lee, J. H.; Leight, W.; LeVine, M. J.; Li, C.; Li, N.; Li, Y.; Lin, G.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Ma, G. L.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mall, O. I.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Matis, H. S.; Matulenko, Yu A.; McDonald, D.; McShane, T. S.; Meschanin, A.; Milner, R.; Minaev, N. G.; Mioduszewski, Saskia; Mischke, A.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Netrakanti, P. K.; Ng, M. J.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okada, H.; Okorokov, V.; Olson, D.; Pachr, M.; Page, B. S.; Pal, S. K.; Pandit, Y.; Panebratsev, Y.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Pile, P.; Planinic, M.; Pluta, J.; Plyku, D.; Poljak, N.; Poskanzer, A. M.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Pujahari, P. R.; Putschke, J.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Redwine, R.; Reed, R.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shi, S. S.; Shi, X. -H; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Staszak, D.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Y.; Sun, Z.; Surrow, B.; Symons, T. J. M.; de Toledo, A. Szanto; Takahashi, J.; Tang, A. H.; Tang, Z.; Tarini, L. H.; Tarnowsky, T.; Thein, D.; Thomas, J. H.; Tian, J.; Timmins, A. R.; Timoshenko, S.; Tlusty, D.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trattner, A. L.; Trentalange, S.; Tribble, Robert E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; Van Buren, G.; Van Leeuwen, M.; Molen, A. M. Vander; Vanfossen, J. A., Jr.; V