Sample records for ge nerators referred

  1. Z:\\Gerontology\\Program\\Application Packages\\PBD Application Package\\PBD package 2008\\Reference form.doc de partme nt of ge rontology

    E-Print Network [OSTI]

    .doc de partme nt of ge rontology gerontology research centre Letter of ReferenceLetter of Reference

  2. Z:\\Gerontology\\Program\\Application Packages\\MA Application Package\\Application Package 2008\\Reference Form.doc de partme nt of ge rontology

    E-Print Network [OSTI]

    \\Reference Form.doc de partme nt of ge rontology gerontology research centre LETTER OF REFERENCE MASTER

  3. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  4. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    High-electron-mobility Si/SiGe heterostructures: influenceof the relaxed SiGe buffer layer," Semiconductor Science andFrom its discovery to SiGe devices," Materials Science in

  5. Poroelastic references

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Christina Morency

    This file contains a list of relevant references on the Biot theory (forward and inverse approaches), the double-porosity and dual-permeability theory, and seismic wave propagation in fracture porous media, in RIS format, to approach seismic monitoring in a complex fractured porous medium such as Brady?s Geothermal Field.

  6. Poroelastic references

    SciTech Connect (OSTI)

    Christina Morency

    2014-12-12T23:59:59.000Z

    This file contains a list of relevant references on the Biot theory (forward and inverse approaches), the double-porosity and dual-permeability theory, and seismic wave propagation in fracture porous media, in RIS format, to approach seismic monitoring in a complex fractured porous medium such as Brady?s Geothermal Field.

  7. HD1: Design and Fabrication of a 16 Tesla Nb3Sn Dipole Magnet

    E-Print Network [OSTI]

    Hafalia, A.R.

    2011-01-01T23:59:59.000Z

    and Fabrication of a 16 Tesla Nb 3 Sn Dipole Magnet A .R.ge nerating fields above 16 Tesla in practical acceleratordesign fields above 10 Tesla. In a series of magnet tests,

  8. Reference Material

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's PossibleRadiation Protection RadiationRecord-SettingHead ofReference-Documents Sign In

  9. Reference Documents

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's PossibleRadiation Protection RadiationRecord-SettingHead ofReference-Documents Sign In About |

  10. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311 CE 318 CE 319 CE 317 CE 316CE 327 CE 321 Sr Sci elect#CE 329 CE 328 GE 300# Eng/Sr Sci Elec# CE Elec

  11. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHECHE 413 Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470

  12. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470^ Chemical

  13. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313 ME 316 ME 352ME 330 GE 348# ME 328 ME 327 ME 323 ME 321ME 324 RCM 300# ME 418 ME 417 ME 450 ME 431

  14. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE 4G Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  15. GE Healthcare Introduction

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare Introduction HR 16 columns are designed for high resolution liquid chromatography your local GE Healthcare office. System compatibility HR 16 columns are designed to be used with ÄKTATM. Wash the parts thoroughly in distilled water. 4. Reassemble the column (see Assembling the column above

  16. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology...

  17. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide and MethaneLocations GE

  18. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell is theOpportunitiesTheGAOHome >About GE

  19. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFunding OpportunityF G F ! ( ! ( ! ( !ProgressGE

  20. GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

    SciTech Connect (OSTI)

    Tseng, H. H.; Li, H.; Mashanov, V.; Yang, Y. J.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 106, Taiwan (China); Chang, G. E. [Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan (China)] [Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-tech Innovations, National Chung Cheng University, Chiayi County 62102, Taiwan (China); Soref, R. A.; Sun, G. [Department of Physics, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)] [Department of Physics, University of Massachusetts Boston, Boston, Massachusetts 02125 (United States)

    2013-12-02T23:59:59.000Z

    We report an investigation of GeSn-based p-i-n photodiodes with an active GeSn layer that is almost fully strained. The results show that (a) the response of the Ge/GeSn/Ge heterojunction photodiodes is stronger than that of the reference Ge-based photodiodes at photon energies above the 0.8 eV direct bandgap of bulk Ge (<1.55??m), and (b) the optical response extends to lower energy regions (1.55–1.80??m wavelengths) as characterized by the strained GeSn bandgap. A cusp-like spectral characteristic is observed for samples with high Sn contents, which is attributed to the significant strain-induced energy splitting of heavy and light hole bands. This work represents a step forward in developing GeSn-based infrared photodetectors.

  1. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  2. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  3. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping these techniques in humans. Previous human studies (4-6) instead used the conventional GE BOLD technique, combined and limitations of GE BOLD differential mapping as compared to HSE BOLD differential mapping of ocular dominance

  4. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16T23:59:59.000Z

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  5. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13T23:59:59.000Z

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  6. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  7. GE Wins Manufacturing Leadership Award |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    secured software platform that delivers data and visualizations to all major artificial lift functions at GE Oil & Gas. Several analytic modules were built to extract meaningful...

  8. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Academia Partner on Microgrid Project GE Awarded a 1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events...

  9. GE, Aavid Commercialize Dual Cool Jets Technology | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    market. GE's broad array of industrial businesses requires highly advanced and reliable electronics that are increasingly driving the need for advanced cooling solutions to...

  10. GE, University of Washington Disease Detection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    excited about this team's unique ability to combine new designs for paper-based microfluidics with new nucleic amplification methods and GE's novel paper chemistries to help...

  11. The GE Store

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our InstagramStructureProposedPAGESafetyTed5,AuditThe FiveBiofuelsGE Store for

  12. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  13. High frequency reference electrode

    DOE Patents [OSTI]

    Kronberg, J.W.

    1994-05-31T23:59:59.000Z

    A high frequency reference electrode for electrochemical experiments comprises a mercury-calomel or silver-silver chloride reference electrode with a layer of platinum around it and a layer of a chemically and electrically resistant material such as TEFLON around the platinum covering all but a small ring or halo' at the tip of the reference electrode, adjacent to the active portion of the reference electrode. The voltage output of the platinum layer, which serves as a redox electrode, and that of the reference electrode are coupled by a capacitor or a set of capacitors and the coupled output transmitted to a standard laboratory potentiostat. The platinum may be applied by thermal decomposition to the surface of the reference electrode. The electrode provides superior high-frequency response over conventional electrodes. 4 figs.

  14. Optical voltage reference

    DOE Patents [OSTI]

    Rankin, R.; Kotter, D.

    1994-04-26T23:59:59.000Z

    An optical voltage reference for providing an alternative to a battery source is described. The optical reference apparatus provides a temperature stable, high precision, isolated voltage reference through the use of optical isolation techniques to eliminate current and impedance coupling errors. Pulse rate frequency modulation is employed to eliminate errors in the optical transmission link while phase-lock feedback is employed to stabilize the frequency to voltage transfer function. 2 figures.

  15. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    temperature," said Frank Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. Developed over the past decade, these new magnetocaloric...

  16. Application Protocol Reference Architecture Application Protocol Reference Architecture

    E-Print Network [OSTI]

    van Sinderen, Marten

    Application Protocol Reference Architecture 165 Chapter 7 Application Protocol Reference Architecture This chapter proposes an alternative reference architecture for application protocols. The proposed reference architecture consists of the set of possible architectures for application protocols

  17. Serial and parallel Si, Ge, and SiGe direct-write with scanning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting...

  18. ILC cryogenic systems reference design

    SciTech Connect (OSTI)

    Peterson, T.J.; Geynisman, M.; Klebaner, A.; Theilacker, J.; /Fermilab; Parma, V.; Tavian, L.; /CERN

    2008-01-01T23:59:59.000Z

    A Global Design Effort (GDE) began in 2005 to study a TeV scale electron-positron linear accelerator based on superconducting radio-frequency (RF) technology, called the International Linear Collider (ILC). In early 2007, the design effort culminated in a reference design for the ILC, closely based on the earlier TESLA design. The ILC will consist of two 250 GeV linacs, which provide positron-electron collisions for high energy physics research. The particle beams will be accelerated to their final energy in superconducting niobium RF cavities operating at 2 kelvin. At a length of about 12 km each, the main linacs will be the largest cryogenic systems in the ILC. Positron and electron sources, damping rings, and beam delivery systems will also have a large number and variety of other superconducting RF cavities and magnets, which require cooling at liquid helium temperatures. Ten large cryogenic plants with 2 kelvin refrigeration are envisioned to cool the main linacs and the electron and positron sources. Three smaller cryogenic plants will cool the damping rings and beam delivery system components predominately at 4.5 K. This paper describes the cryogenic systems concepts for the ILC.

  19. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316

  20. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316 Grp

  1. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  2. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on

  3. Value of Information References

    DOE Data Explorer [Office of Scientific and Technical Information (OSTI)]

    Morency, Christina

    This file contains a list of relevant references on value of information (VOI) in RIS format. VOI provides a quantitative analysis to evaluate the outcome of the combined technologies (seismology, hydrology, geodesy) used to monitor Brady's Geothermal Field.

  4. Value of Information References

    SciTech Connect (OSTI)

    Morency, Christina

    2014-12-12T23:59:59.000Z

    This file contains a list of relevant references on value of information (VOI) in RIS format. VOI provides a quantitative analysis to evaluate the outcome of the combined technologies (seismology, hydrology, geodesy) used to monitor Brady's Geothermal Field.

  5. Precision displacement reference system

    DOE Patents [OSTI]

    Bieg, Lothar F. (Albuquerque, NM); Dubois, Robert R. (Albuquerque, NM); Strother, Jerry D. (Edgewood, NM)

    2000-02-22T23:59:59.000Z

    A precision displacement reference system is described, which enables real time accountability over the applied displacement feedback system to precision machine tools, positioning mechanisms, motion devices, and related operations. As independent measurements of tool location is taken by a displacement feedback system, a rotating reference disk compares feedback counts with performed motion. These measurements are compared to characterize and analyze real time mechanical and control performance during operation.

  6. Membrane reference electrode

    DOE Patents [OSTI]

    Redey, L.; Bloom, I.D.

    1988-01-21T23:59:59.000Z

    A reference electrode utilizes a small thin, flat membrane of a highly conductive glass placed on a small diameter insulator tube having a reference material inside in contact with an internal voltage lead. When the sensor is placed in a non-aqueous ionic electrolytic solution, the concentration difference across the glass membrane generates a low voltage signal in precise relationship to the concentration of the species to be measured, with high spatial resolution. 2 figs.

  7. GE, Berkeley Energy Storage for Electric Vehicles | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Just Add Water: GE, Berkeley Lab Explore Possible Key to Energy Storage for Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  8. Cold Spray and GE Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    difference of the work done at GE Global Research is the development of cold spray for additive manufacturing, where we adapt this novel coating process to build 3D shapes....

  9. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  10. Joining GE Global Research Thermal Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alps. With more than 16 years working as an aerospace engineer in the development of gas turbine jet engines, I had GE on my radar screen right from the beginning when I was...

  11. Uniaxially stressed Ge:Ga and Ge:Be

    SciTech Connect (OSTI)

    Dubon, O.D. Jr.

    1992-12-01T23:59:59.000Z

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  12. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  13. Multifunctional reference electrode

    DOE Patents [OSTI]

    Redey, L.; Vissers, D.R.

    1981-12-30T23:59:59.000Z

    A multifunctional, low mass reference electrode of a nickel tube, thermocouple means inside the nickel tube electrically insulated therefrom for measuring the temperature thereof, a housing surrounding the nickel tube, an electrolyte having a fixed sulfide ion activity between the housing and the outer surface of the nickel tube forming the nickel/nickel sulfide/sulfide half-cell are described. An ion diffusion barrier is associated with the housing in contact with the electrolyte. Also disclosed is a cell using the reference electrode to measure characteristics of a working electrode.

  14. Aluminum reference electrode

    DOE Patents [OSTI]

    Sadoway, D.R.

    1988-08-16T23:59:59.000Z

    A stable reference electrode is described for use in monitoring and controlling the process of electrolytic reduction of a metal. In the case of Hall cell reduction of aluminum, the reference electrode comprises a pool of molten aluminum and a solution of molten cryolite, Na[sub 3]AlF[sub 6], wherein the electrical connection to the molten aluminum does not contact the highly corrosive molten salt solution. This is accomplished by altering the density of either the aluminum (decreasing the density) or the electrolyte (increasing the density) so that the aluminum floats on top of the molten salt solution. 1 fig.

  15. Aluminum reference electrode

    DOE Patents [OSTI]

    Sadoway, Donald R. (Belmont, MA)

    1988-01-01T23:59:59.000Z

    A stable reference electrode for use in monitoring and controlling the process of electrolytic reduction of a metal. In the case of Hall cell reduction of aluminum, the reference electrode comprises a pool of molten aluminum and a solution of molten cryolite, Na.sub.3 AlF.sub.6, wherein the electrical connection to the molten aluminum does not contact the highly corrosive molten salt solution. This is accomplished by altering the density of either the aluminum (decreasing the density) or the electrolyte (increasing the density) so that the aluminum floats on top of the molten salt solution.

  16. Multifunctional reference electrode

    DOE Patents [OSTI]

    Redey, Laszlo (Lisle, IL); Vissers, Donald R. (Naperville, IL)

    1983-01-01T23:59:59.000Z

    A multifunctional, low mass reference electrode of a nickel tube, thermocouple means inside the nickel tube electrically insulated therefrom for measuring the temperature thereof, a housing surrounding the nickel tube, an electrolyte having a fixed sulfide ion activity between the housing and the outer surface of the nickel tube forming the nickel/nickel sulfide/sulfide half-cell. An ion diffusion barrier is associated with the housing in contact with the electrolyte. Also disclosed is a cell using the reference electrode to measure characteristics of a working electrode.

  17. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  18. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  19. Grant Reference Lead / Sole

    E-Print Network [OSTI]

    Rank Overall Score Grant Reference Lead / Sole Grant Grant Holder Research Organisation Project of Birmingham Controls on Soil Carbon Export revealed by Novel Tracers on multiple timescales (SCENT) Standard Grant DEC12 8 8 NE/K011871/1 N Melanie Leng NERC British Geological Survey A 500,000-year environmental

  20. HAZARDOUS WASTE MANAGEMENT REFERENCE

    E-Print Network [OSTI]

    Faraon, Andrei

    Principal Investigators 7 Laboratory Personnel 8 EH&S Personnel 8 HAZARDOUS WASTE ACCUMULATION AREAS 9 Satellite Accumulation Area 9 Waste Accumulation Facility 10 HAZARDOUS WASTE CONTAINER MANAGEMENT LabelingHAZARDOUS WASTE MANAGEMENT REFERENCE GUIDE Prepared by Environment, Health and Safety Office

  1. CONCRETE PAVEMENT Reference Manual

    E-Print Network [OSTI]

    CONCRETE PAVEMENT Reference Manual Prepared for Federal Highway Administration Office of Pavement by National Concrete Pavement Technology Center at Iowa State University 2711 South Loop Drive, Suite 4700 No. 3. Recipient's Catalog No. 4. Title and Subtitle 5. Report Date February 2008 Concrete Pavement

  2. MSL ENTERANCE REFERENCE AREA

    E-Print Network [OSTI]

    Aalberts, Daniel P.

    MSL ENTERANCE LOBBY ELEV STAIRS SSL-019 REFERENCE AREA SSL-021 GROUP STUDY SSL-018 STUDY ROOM SSL-029 SSL-020 COPY ROOM SSL-022 GROUP STUDY SSL-026 STACKS SSL-023 GROUP STUDY SSL-024 GROUP STUDY SSL TBL-014 TBL-014A STAIRS SSL-007 GIS/ WORKROOM SSL-011 SSL-008 SSL-009 SSL-010 SSL-014 SSL-017 STAIRS

  3. Cisco Reference Configurations for

    E-Print Network [OSTI]

    Chaudhuri, Surajit

    ............................................................................................. 10 EMC VNX5500 Storage Layout.0 with EMC VNX5500 Series Storage Systems White Paper November 2012 © 2012 Cisco and/or its affiliates. AllCisco Reference Configurations for Microsoft SQL Server 2012 Fast Track Data Warehouse 4.0 with EMC

  4. OSH technical reference manual

    SciTech Connect (OSTI)

    Not Available

    1993-11-01T23:59:59.000Z

    In an evaluation of the Department of Energy (DOE) Occupational Safety and Health programs for government-owned contractor-operated (GOCO) activities, the Department of Labor`s Occupational Safety and Health Administration (OSHA) recommended a technical information exchange program. The intent was to share written safety and health programs, plans, training manuals, and materials within the entire DOE community. The OSH Technical Reference (OTR) helps support the secretary`s response to the OSHA finding by providing a one-stop resource and referral for technical information that relates to safe operations and practice. It also serves as a technical information exchange tool to reference DOE-wide materials pertinent to specific safety topics and, with some modification, as a training aid. The OTR bridges the gap between general safety documents and very specific requirements documents. It is tailored to the DOE community and incorporates DOE field experience.

  5. Reference Undulator Measurement Results

    SciTech Connect (OSTI)

    Wolf, Zachary; Levashov, Yurii; /SLAC; ,

    2011-08-18T23:59:59.000Z

    The LCLS reference undulator has been measured 22 times during the course of undulator tuning. These measurements provide estimates of various statistical errors. This note gives a summary of the reference undulator measurements and it provides estimates of the undulator tuning errors. We measured the reference undulator many times during the tuning of the LCLS undulators. These data sets give estimates of the random errors in the tuned undulators. The measured trajectories in the reference undulator are stable and straight to within {+-}2 {micro}m. Changes in the phase errors are less than {+-}2 deg between data sets. The phase advance in the cell varies by less than {+-}2 deg between data sets. The rms variation between data sets of the first integral of B{sub x} is 9.98 {micro}Tm, and the rms variation of the second integral of B{sub x} is 17.4 {micro}Tm{sup 2}. The rms variation of the first integral of B{sub y} is 6.65 {micro}Tm, and the rms variation of the second integral of B{sub y} is 12.3 {micro}Tm{sup 2}. The rms variation of the x-position of the fiducialized beam axis is 35 {micro}m in the final production run This corresponds to an rms uncertainty in the K value of {Delta}K/K = 2.7 x 10{sup -5}. The rms variation of the y-position of the fiducialized beam axis is 4 {micro}m in the final production run.

  6. Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1,

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1, * Sucismita Chutia,1 Charles an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting interface, with characteristic energy splittings of order 0.1­1 meV for the case of SiGe/Si/SiGe quantum

  7. STEP Intern Reference Check Sheet

    Broader source: Energy.gov [DOE]

    STEP Intern Reference Check Sheet, from the Tool Kit Framework: Small Town University Energy Program (STEP).

  8. ILC Reference Design Report Volume 3 - Accelerator

    E-Print Network [OSTI]

    Phinney, Nan; Walker, Nicholas

    2007-01-01T23:59:59.000Z

    The International Linear Collider (ILC) is a 200-500 GeV center-of-mass high-luminosity linear electron-positron collider, based on 1.3 GHz superconducting radio-frequency (SCRF) accelerating cavities. The ILC has a total footprint of about 31 km and is designed for a peak luminosity of 2x10^34 cm^-2 s^-1. The complex includes a polarized electron source, an undulator-based positron source, two 6.7 km circumference damping rings, two-stage bunch compressors, two 11 km long main linacs and a 4.5 km long beam delivery system. This report is Volume III (Accelerator) of the four volume Reference Design Report, which describes the design and cost of the ILC.

  9. Rolling up SiGe on insulator

    SciTech Connect (OSTI)

    Cavallo, F.; Songmuang, R.; Ulrich, C.; Schmidt, O. G. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2007-05-07T23:59:59.000Z

    SiGe on insulator films of 10-50 nm thickness are fabricated by Ge condensation applying different oxidation times. The layers are released from the substrate by selectively etching the insulator film. Due to the varying Ge composition, the layers bend downward toward the substrate surface and roll up into microtubes. Depending on the Ge condensation, the strain distribution in the SiGe layers varies and allows a scaling of the tube diameters between 1 and 4 {mu}m. Assuming pseudomorphic SiGe layers, the tube diameters are smaller than expected from continuum mechanical theory. This suggests the occurrence of additional strain in the oxidized films.

  10. Optomechanical reference accelerometer

    E-Print Network [OSTI]

    Gerberding, Oliver; Melcher, John; Pratt, Jon; Taylor, Jacob

    2015-01-01T23:59:59.000Z

    We present an optomechanical accelerometer with high dynamic range, high bandwidth and read-out noise levels below 8 {\\mu}g/$\\sqrt{\\mathrm{Hz}}$. The straightforward assembly and low cost of our device make it a prime candidate for on-site reference calibrations and autonomous navigation. We present experimental data taken with a vacuum sealed, portable prototype and deduce the achieved bias stability and scale factor accuracy. Additionally, we present a comprehensive model of the device physics that we use to analyze the fundamental noise sources and accuracy limitations of such devices.

  11. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion CubicPotentialNov-14 Dec-14 Jan-1538,469Appendix E4 Reference

  12. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion CubicPotentialNov-14 Dec-14 Jan-1538,469Appendix E4 Reference4

  13. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion CubicPotentialNov-14 Dec-14 Jan-1538,469Appendix E4 Reference46

  14. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40CoalLease(Billion CubicPotentialNov-14 Dec-14 Jan-1538,469Appendix E44 Reference

  15. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor2 Reference

  16. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor2 Reference4

  17. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor2 Reference46

  18. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor2 Reference464

  19. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor24 Reference

  20. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor24 Reference6

  1. Appendix A: Reference case

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122 40Coal Stocks at CommercialDecade Year-0 Year-1 Year-2CubiccurrentFor24 Reference68

  2. REFERENCES Baines, W. D.

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilAElectronicCurvesSpeedingScientificof ScientificQ LA-UR- " "REFERENCES

  3. References to Astrophysics Papers

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Scienceand Requirements Recently Approved JustificationBio-Inspired SolarReferences to

  4. Antares Reference Telescope System

    SciTech Connect (OSTI)

    Viswanathan, V.K.; Kaprelian, E.; Swann, T.; Parker, J.; Wolfe, P.; Woodfin, G.; Knight, D.

    1983-01-01T23:59:59.000Z

    Antares is a 24-beam, 40-TW carbon-dioxide laser-fusion system currently nearing completion at the Los Alamos National Laboratory. The 24 beams will be focused onto a tiny target (typically 300 to 1000 ..mu..m in diameter) located approximately at the center of a 7.3-m-diameter by 9.3-m-long vacuum (10/sup -6/ torr) chamber. The design goal is to position the targets to within 10 ..mu..m of a selected nominal position, which may be anywhere within a fixed spherical region 1 cm in diameter. The Antares Reference Telescope System is intended to help achieve this goal for alignment and viewing of the various targets used in the laser system. The Antares Reference Telescope System consists of two similar electro-optical systems positioned in a near orthogonal manner in the target chamber area of the laser. Each of these consists of four subsystems: (1) a fixed 9X optical imaging subsystem which produces an image of the target at the vidicon; (2) a reticle projection subsystem which superimposes an image of the reticle pattern at the vidicon; (3) an adjustable front-lighting subsystem which illuminates the target; and (4) an adjustable back-lighting subsystem which also can be used to illuminate the target. The various optical, mechanical, and vidicon design considerations and trade-offs are discussed. The final system chosen (which is being built) and its current status are described in detail.

  5. Coal data: A reference

    SciTech Connect (OSTI)

    Not Available

    1995-02-01T23:59:59.000Z

    This report, Coal Data: A Reference, summarizes basic information on the mining and use of coal, an important source of energy in the US. This report is written for a general audience. The goal is to cover basic material and strike a reasonable compromise between overly generalized statements and detailed analyses. The section ``Supplemental Figures and Tables`` contains statistics, graphs, maps, and other illustrations that show trends, patterns, geographic locations, and similar coal-related information. The section ``Coal Terminology and Related Information`` provides additional information about terms mentioned in the text and introduces some new terms. The last edition of Coal Data: A Reference was published in 1991. The present edition contains updated data as well as expanded reviews and additional information. Added to the text are discussions of coal quality, coal prices, unions, and strikes. The appendix has been expanded to provide statistics on a variety of additional topics, such as: trends in coal production and royalties from Federal and Indian coal leases, hours worked and earnings for coal mine employment, railroad coal shipments and revenues, waterborne coal traffic, coal export loading terminals, utility coal combustion byproducts, and trace elements in coal. The information in this report has been gleaned mainly from the sources in the bibliography. The reader interested in going beyond the scope of this report should consult these sources. The statistics are largely from reports published by the Energy Information Administration.

  6. CH 6 REFERENCES.DOC 6-1 6 References

    E-Print Network [OSTI]

    REFERENCES.DOC Allan, S., A. R. Buckley, and J. E. Meacham. 2001. Atlas of Oregon. Second Edition. William J

  7. Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

    SciTech Connect (OSTI)

    Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu. [A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Mironov, O. A. [Warwick SEMINANO R and D Centre, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Kaenel, H. von [Laboratorium fuer Festkoerperphysik ETH Zuerich, CH-8093 Zuerich (Switzerland); EpiSpeed SA, Technoparkstrasse 1, CH-8005 Zuerich (Switzerland)

    2009-11-01T23:59:59.000Z

    Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

  8. Room temperature 1.6 m electroluminescence from Ge light emitting diode on Si substrate

    E-Print Network [OSTI]

    Vuckovic, Jelena

    Room temperature 1.6 µm electroluminescence from Ge light emitting diode on Si substrate Szu n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device.4670) Optical materials; (230.3670) Light-emitting diodes. References and links 1. L. C. Kimerling, "Silicon

  9. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  10. Nuclear Science References Database

    E-Print Network [OSTI]

    B. Pritychenko; E. B?ták; B. Singh; J. Totans

    2014-07-08T23:59:59.000Z

    The Nuclear Science References (NSR) database together with its associated Web interface, is the world's only comprehensive source of easily accessible low- and intermediate-energy nuclear physics bibliographic information for more than 210,000 articles since the beginning of nuclear science. The weekly-updated NSR database provides essential support for nuclear data evaluation, compilation and research activities. The principles of the database and Web application development and maintenance are described. Examples of nuclear structure, reaction and decay applications are specifically included. The complete NSR database is freely available at the websites of the National Nuclear Data Center http://www.nndc.bnl.gov/nsr and the International Atomic Energy Agency http://www-nds.iaea.org/nsr.

  11. Long life reference electrode

    DOE Patents [OSTI]

    Yonco, R.M.; Nagy, Z.

    1987-07-30T23:59:59.000Z

    An external, reference electrode is provided for long term use with a high temperature, high pressure system. The electrode is arranged in a vertical, electrically insulative tube with an upper portion serving as an electrolyte reservoir and a lower portion in electrolytic communication with the system to be monitored. The lower end portion includes a flow restriction such as a porous plug to limit the electrolyte release into the system. A piston equalized to the system pressure is fitted into the upper portion of the tube to impart a small incremental pressure to the electrolyte. The piston is selected of suitable size and weight to cause only a slight flow of electrolyte through the porous plug into the high pressure system. This prevents contamination of the electrolyte but is of such small flow rate that operating intervals of a month or more can be achieved. 2 figs.

  12. Landscapes as references for design

    E-Print Network [OSTI]

    Batchelor, James P

    1981-01-01T23:59:59.000Z

    This is a study of the ways in which the forms in landscapes - natural terrain adapted and inhabited - can serve as references in architectural design. As references for design, landscapes provide a richness of responses ...

  13. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11T23:59:59.000Z

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  14. Budget Reconciliation Procedures Reference Guide

    E-Print Network [OSTI]

    Shull, Kenneth R.

    Budget Reconciliation Procedures Reference Guide eDev Course Number FMS723 Subject Area Budget Northwestern University #12;Reference Guide Budget Reconciliation Table of Contents Helpful Contacts....................................................................................... 14 723QuickRefGuidev1.4 2 of 14 #12;Reference Guide Budget Reconciliation Helpful Contacts Below

  15. SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication Zhiyuan Cheng, E. A. Fitzgerald, and D with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe

  16. COSY INFINITY reference manual

    SciTech Connect (OSTI)

    Berz, M.

    1990-07-01T23:59:59.000Z

    This is a reference manual for the arbitrary order particle optics and beam dynamics code COSY INFINITY. It is current as of June 28, 1990. COSY INFINITY is a code to study and design particle optical systems, including beamlines, spectrometers, and particle accelerators. At its core it is using differential algebraic (DA) methods, which allow a very systematic and simple calculation of high order effects. At the same time, it allows the computation of dependences on system parameters, which is often interesting in its own right and can also be used for fitting. COSY INFINITY has a full structured object oriented language environment. This provides a simple interface for the casual user. At the same time, it offers the demanding user a very flexible and powerful tool for the study and design of systems, and more generally, the utilization of DA methods. The power and generality of the environment is perhaps best demonstrated by the fact that the physics routines of COSY INFINITY are written in its own input language and are very compact. The approach also considerably facilitates the implementation of new features because they are incorporated with the same commands that are used for design and study. 26 refs.

  17. Sensor Characteristics Reference Guide

    SciTech Connect (OSTI)

    Cree, Johnathan V.; Dansu, A.; Fuhr, P.; Lanzisera, Steven M.; McIntyre, T.; Muehleisen, Ralph T.; Starke, M.; Banerjee, Pranab; Kuruganti, T.; Castello, C.

    2013-04-01T23:59:59.000Z

    The Buildings Technologies Office (BTO), within the U.S. Department of Energy (DOE), Office of Energy Efficiency and Renewable Energy (EERE), is initiating a new program in Sensor and Controls. The vision of this program is: • Buildings operating automatically and continuously at peak energy efficiency over their lifetimes and interoperating effectively with the electric power grid. • Buildings that are self-configuring, self-commissioning, self-learning, self-diagnosing, self-healing, and self-transacting to enable continuous peak performance. • Lower overall building operating costs and higher asset valuation. The overarching goal is to capture 30% energy savings by enhanced management of energy consuming assets and systems through development of cost-effective sensors and controls. One step in achieving this vision is the publication of this Sensor Characteristics Reference Guide. The purpose of the guide is to inform building owners and operators of the current status, capabilities, and limitations of sensor technologies. It is hoped that this guide will aid in the design and procurement process and result in successful implementation of building sensor and control systems. DOE will also use this guide to identify research priorities, develop future specifications for potential market adoption, and provide market clarity through unbiased information

  18. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMForms About Become agovEducationWelcome toAboutAbout GE Global Research

  19. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cn SunnybankD.jpgHanfordDepartment ofHeat Transfer in GE Jet Engines Click to

  20. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15T23:59:59.000Z

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  1. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWP TWP Related LinksATHENAAdministrative80-AA (01-2015)GE

  2. Optical probe with reference fiber

    DOE Patents [OSTI]

    Da Silva, Luiz B. (Danville, CA); Chase, Charles L. (Dublin, CA)

    2006-03-14T23:59:59.000Z

    A system for characterizing tissue includes the steps of generating an emission signal, generating a reference signal, directing the emission signal to and from the tissue, directing the reference signal in a predetermined manner relative to the emission signal, and using the reference signal to compensate the emission signal. In one embodiment compensation is provided for fluctuations in light delivery to the tip of the probe due to cable motion.

  3. FAQS Reference Guide- Chemical Processing

    Broader source: Energy.gov [DOE]

    This reference guide addresses the competency statements in the February 2010 edition of DOE-STD-1176-2010, Chemical Processing Functional Area Qualification Standard.

  4. FAQS Reference Guide – Emergency Management

    Broader source: Energy.gov [DOE]

    This reference guide addresses the competency statements in the January 2004 edition of DOE-STD-1177-2004, Emergency Management Functional Area Qualification Standard.

  5. FAQS Reference Guide – Industrial Hygiene

    Broader source: Energy.gov [DOE]

    This reference guide addresses the competency statements in the November 2007 edition of DOE-STD-1138-2007, Industrial Hygiene Functional Area Qualification Standard.

  6. FAQS Reference Guide – Construction Management

    Broader source: Energy.gov [DOE]

    This reference guide addresses the competency statements in the March 2004 edition of DOE-STD-1180-2004, Construction Management Functional Area Qualification Standard.

  7. FAQS Reference Guide – Environmental Compliance

    Broader source: Energy.gov [DOE]

    This reference guide addresses the competency statements in the June 2011 edition of DOE-STD-1156-2011, Environmental Compliance Functional Area Qualification Standard.

  8. Ris Energy Report 6 References Reference list for Chapter 3

    E-Print Network [OSTI]

    Risø Energy Report 6 References Reference list for Chapter 3 1. European Commission. (2007). Communication from the Commis- sion to the European Council and the European Parliament ­ An energy policy of the Brussels European Council 8/9 March 2007. Brussels. (7224/1/07 Rev. 1). 3. Danish Energy authority. (2007

  9. ILC Reference Design Report Volume 1 - Executive Summary

    E-Print Network [OSTI]

    Brau, James; Walker, Nicholas

    2007-01-01T23:59:59.000Z

    The International Linear Collider (ILC) is a 200-500 GeV center-of-mass high-luminosity linear electron-positron collider, based on 1.3 GHz superconducting radio-frequency (SCRF) accelerating cavities. The ILC has a total footprint of about 31 km and is designed for a peak luminosity of 2x10^34 cm^-2s^-1. This report is the Executive Summary (Volume I) of the four volume Reference Design Report. It gives an overview of the physics at the ILC, the accelerator design and value estimate, the detector concepts, and the next steps towards project realization.

  10. ILC Reference Design Report Volume 1 - Executive Summary

    E-Print Network [OSTI]

    James Brau; Yasuhiro Okada; Nicholas Walker

    2007-12-12T23:59:59.000Z

    The International Linear Collider (ILC) is a 200-500 GeV center-of-mass high-luminosity linear electron-positron collider, based on 1.3 GHz superconducting radio-frequency (SCRF) accelerating cavities. The ILC has a total footprint of about 31 km and is designed for a peak luminosity of 2x10^34 cm^-2s^-1. This report is the Executive Summary (Volume I) of the four volume Reference Design Report. It gives an overview of the physics at the ILC, the accelerator design and value estimate, the detector concepts, and the next steps towards project realization.

  11. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enables Advanced Thermal Imaging An error occurred. Unable to execute Javascript. Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo...

  12. Appendix E References | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    NEPA Reading Room SEIS for the Production of Tritium in a Commercial Light Water Reactor Reference Documents Appendix E References Appendix E References Crosswalk of...

  13. Limited-area growth of Ge and SiGe on Si

    E-Print Network [OSTI]

    Kim, Meekyung, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low ...

  14. SiGe/sSi quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Witzel, Wayne M; Carroll, Malcolm S

    2011-01-01T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/sSi quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  15. SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Wayne M. Witzel; Rajib Rahman; Malcolm S. Carroll

    2012-05-14T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  16. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  17. Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells

    SciTech Connect (OSTI)

    Said, K.; Poortmans, J.; Caymax, M.; Nijs, J.; Debarge, L.; Christoffel, E.; Slaoui, A.

    1999-10-01T23:59:59.000Z

    One possible method to improve the efficiency of crystalline silicon (Ci) solar cells is by alloying with germanium (Ge). Although the improved absorption of the alloy leads to a gain in the current, the reduction of the alloy bandgap causes a loss in voltage, which overrides the increased current of the SiGe alloy solar cell. There has been a number of theoretical studies to circumvent this behavior. However, to date there has been no detailed study, which discusses the technological implementation of these concepts in solar cells. In this paper, the design issues of crystalline Si-SiGe heterostructure will be dealt with in an attempt to reduce the effect of the increased dark current of the alloyed cells, while at the same time sustaining the enhancement in the current. The enhanced back surface field at the back p{sup +}-Si/p-SiGe interface reduces the base component of the recombination current of the heterostructure cell if recombination caused by dislocations is neglected. A higher infrared (IR) response which results in a higher short-circuit current (2 mA/cm{sup 2} higher than a reference Si cell) has been recorded for the Si-Si{sub .9}Ge{sub .1}-thin-film structure of 15 {micro}m thickness. The reduction in dark saturation current, which has been predicted based on the theoretical calculations could not be realized in the heterostructure SiGe/Si cell due to the degradation effect of the misfit dislocations that decreases the bulk lifetime, and increases the interface recombination velocity. In a structure which contains a p{sup +}-SiGe buffer layer, and efficiency of 12.5% is achieved for a SiGe cell with 15 {micro}m thickness without texturing or optical confinement, which is about the same as the Si reference cell with equal active thickness, but with a higher short-circuit current. These results, for the first time, experimentally prove that alloying with Ge offers a higher current and might have a room for improving the efficiency of the multijunction solar cells or dual bandgap cells when SiGe is used to convert the IR-part of the spectrum.

  18. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

    E-Print Network [OSTI]

    Chléirigh, C. Ni

    The hole mobility characteristics of ?110? /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied.

  19. POET with C++ Reference Manual

    E-Print Network [OSTI]

    Buhr, Peter Allan

    POET with #22;C++ Reference Manual University of Waterloo David Taylor and Peter A. Buhr c #3; 1996 July 23, 2006 #3; Permission is granted to make copies for personal or educational use #12; 2 POET Reference Manual Contents 1 Introduction 3 2 Before Starting POET 3 3 Accessing POET 3 4 User Interface 3 5

  20. NIST Cloud Computing Reference Architecture

    E-Print Network [OSTI]

    Perkins, Richard A.

    NIST Cloud Computing Reference Architecture Recommendations of the National Institute of Standards Publication 500-292 #12;i NIST Special Publication 500-292 NIST Cloud Computing Reference Architecture, John Messina, Lee Badger and Dawn Leaf Information Techonology Laboratory Cloud Computing Program

  1. REFERENCE CHECK QUESTIONS Candidate Name:_____________________ Date of Reference:_____________

    E-Print Network [OSTI]

    Provancher, William

    are the candidate's most significant strengths? Any areas for improvement? If you were in a position to hire:_____________ Reference Name:_____________________ Company:____________________ Conducted by:_______________________ Phone (name) handle conflict? How about pressure? Stress? Describe the candidate's productivity, commitment

  2. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31T23:59:59.000Z

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  3. Relaxed SiGe Layers with High Ge Content by Compliant Substrates , R.L. Peterson1

    E-Print Network [OSTI]

    Relaxed SiGe Layers with High Ge Content by Compliant Substrates H. Yin1 , R.L. Peterson1 , K, high Ge content SiGe layers have been realized using stress balance on a compliant under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films

  4. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Zhengping Jiang; Neerav Kharche; Timothy Boykin; Gerhard Klimeck

    2012-03-06T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  5. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Jiang, Zhengping; Boykin, Timothy; Klimeck, Gerhard

    2011-01-01T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  6. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  7. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01T23:59:59.000Z

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (Ge ...

  8. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01T23:59:59.000Z

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  9. Germanium: From Its Discovery to SiGe Devices

    E-Print Network [OSTI]

    Haller, E.E.

    2006-01-01T23:59:59.000Z

    From Its Discovery to SiGe Devices E.E. Haller Department ofrapidly rising interest in SiGe alloys, we are just startingstrained and unstrained SiGe multilayer structures [58]. 9.

  10. FAQS Reference Guide – Occupational Safety

    Broader source: Energy.gov [DOE]

    This reference guide has been developed to address the competency statements in the July 2011 version of DOE-STD-1160-2011, Occupational Safety Functional Area Qualification Standard.

  11. Safeguards and Security Program References

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    2005-08-26T23:59:59.000Z

    The manual establishes definitions for terms related to the Department of Energy Safeguards and Security (S&S) Program and includes lists of references and acronyms/abbreviations applicable to S&S Program directives. Cancels the Safeguards and Security Glossary of Terms, dated 12-18-95. Current Safeguards and Security Program References can also be found at Safeguards and Security Policy Information Resource (http://pir.pnl.gov/)

  12. Scaling of SiGe Heterojunction Bipolar Transistors

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    Scaling of SiGe Heterojunction Bipolar Transistors JAE-SUNG RIEH, SENIOR MEMBER, IEEE, DAVID-century. This paper inves- tigates the impacts of scaling on SiGe heterojunction bipolar tran- sistors (HBTs), which), epitaxial-base Si BJTs (Epi Si BJT), SiGe HBTs (SiGe HBT), and SiGe HBTs with carbon-doped base (SiGeC HBT

  13. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19T23:59:59.000Z

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  14. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03T23:59:59.000Z

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  15. Engineer Receives UMass "Salute To Service" Award | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    November 22, 2013 - GE Global Research, the technology development arm of the General Electric Company (NYSE: GE), is proud to announce that Dr. Marshall Jones, a world renowned...

  16. Crowdsourcing Wins Manufacturing Leadership 100 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NY, May 22, 2013 - GE Global Research, the technology development arm of the General Electric Co. (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership...

  17. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Unable to execute Javascript. Text Version The words...

  18. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research ...

  19. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  20. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15T23:59:59.000Z

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  1. REFERENCES

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014, an OHASeptember 2010In addition to 1 |D I S P U T Edelivery205.1B

  2. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21T23:59:59.000Z

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  3. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be; Nguyen Hoang, T.; Afanas'ev, V. V. [Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium)

    2014-07-28T23:59:59.000Z

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7?×?10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44?±?0.04?eV and E{sub d}?=?2.23?±?0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20?±?0.02?eV and ?E{sub d}?=?0.15?±?0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?°C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is concluded, for the major part, to be a direct consequence of the excessive spreads in the activation energies, ?2–3 times larger than for the Si DB P{sub b} defects at the standard thermal (111)Si/SiO{sub 2} interface which may be easily passivated to device grade levels, strengthened by the reduced difference between the average E{sub f} and E{sub d} values. Exploring the guidelines of the GST model indicates that passivation can be improved by decreasing T{sub an} and attendant enlarging of t{sub a}, however, at best still leaving ?2% defects unpassivated even for unrealistically extended anneal times. The average dissociation energy E{sub d}???2.23?eV, concluded as representing the GeP{sub b1}-H bond strength, is found to be smaller than the SiP{sub b}-H one, characterized by E{sub d}???2.83?eV. An energy deficiency is encountered regarding the energy sum rule inherent to the GST-model, the origin of which is substantiated to lie with a more complex nature of the forward passivation process than basically depicted in the GST model. The results are discussed within the context of theoretical considerations on the passivation of interfacial Ge DBs by hydrogen.

  4. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  5. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

  6. International linear collider reference design report

    SciTech Connect (OSTI)

    Aarons, G.

    2007-06-22T23:59:59.000Z

    The International Linear Collider will give physicists a new cosmic doorway to explore energy regimes beyond the reach of today's accelerators. A proposed electron-positron collider, the ILC will complement the Large Hadron Collider, a proton-proton collider at the European Center for Nuclear Research (CERN) in Geneva, Switzerland, together unlocking some of the deepest mysteries in the universe. With LHC discoveries pointing the way, the ILC -- a true precision machine -- will provide the missing pieces of the puzzle. Consisting of two linear accelerators that face each other, the ILC will hurl some 10 billion electrons and their anti-particles, positrons, toward each other at nearly the speed of light. Superconducting accelerator cavities operating at temperatures near absolute zero give the particles more and more energy until they smash in a blazing crossfire at the centre of the machine. Stretching approximately 35 kilometres in length, the beams collide 14,000 times every second at extremely high energies -- 500 billion-electron-volts (GeV). Each spectacular collision creates an array of new particles that could answer some of the most fundamental questions of all time. The current baseline design allows for an upgrade to a 50-kilometre, 1 trillion-electron-volt (TeV) machine during the second stage of the project. This reference design provides the first detailed technical snapshot of the proposed future electron-positron collider, defining in detail the technical parameters and components that make up each section of the 31-kilometer long accelerator. The report will guide the development of the worldwide R&D program, motivate international industrial studies and serve as the basis for the final engineering design needed to make an official project proposal later this decade.

  7. GE Unveils High-Tech Superhero GENIUS MAN | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    education Committed to inspiring the next generation of scientists and engineers Infused with an array of superpowers inspired by GE technologies Super Vision, ability to...

  8. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  9. C++ References Kenneth I. Joy

    E-Print Network [OSTI]

    California at Davis, University of

    . It enabled me to see how to use the language to accomplish what I wanted to do. ffl Scott Meyer's Book gave plate'' member functions came very close to the ``complete class'' paradigm, that I developed from Meyer that I attempt to utilize. #12; C++ References Page 2 of 3 Lippman, Stanley B., C++ Primer, 2nd Edition

  10. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  11. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  12. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  13. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  14. High-germanium-content SiGe islands formed on compliant oxide by SiGe Haizhou Yina)

    E-Print Network [OSTI]

    High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation Haizhou Yina and the nonuniformity of the enhanced germanium content during the SiGe oxidation were improved by depositing a silicon was relaxed by lateral expansion of the SiGe islands, showing that dislocations were not required

  15. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04T23:59:59.000Z

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  16. Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si*

    E-Print Network [OSTI]

    Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe the sudden rise in threading dislocation density in Ge-rich relaxed graded SiGe layers grown at higher growth systems, including relaxed graded SiGe on Si substrates i.e., x Si1-xGex /Si ,1,2 InGaP on GaP substrates

  17. The Consumption of Reference Resources

    E-Print Network [OSTI]

    G. A. White; J. A. Vaccaro; H. M. Wiseman

    2008-11-22T23:59:59.000Z

    Under the operational restriction of the U(1)-superselection rule, states that contain coherences between eigenstates of particle number constitute a resource. Such resources can be used to facilitate operations upon systems that otherwise cannot be performed. However, the process of doing this consumes reference resources. We show this explicitly for an example of a unitary operation that is forbidden by the U(1)-superselection rule.

  18. HANFORD WASTE MINERALOGY REFERENCE REPORT

    SciTech Connect (OSTI)

    DISSELKAMP RS

    2010-06-29T23:59:59.000Z

    This report lists the observed mineral phases present in the Hanford tanks. This task was accomplished by performing a review of numerous reports that used experimental techniques including, but not limited to: x-ray diffraction, polarized light microscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, electron energy loss spectroscopy, and particle size distribution analyses. This report contains tables that can be used as a quick reference to identify the crystal phases observed in Hanford waste.

  19. HANFORD WASTE MINEROLOGY REFERENCE REPORT

    SciTech Connect (OSTI)

    DISSELKAMP RS

    2010-06-18T23:59:59.000Z

    This report lists the observed mineral phase phases present in the Hanford tanks. This task was accomplished by performing a review of numerous reports using experimental techniques including, but not limited to: x-ray diffraction, polarized light microscopy, scanning electron microscopy, transmission electron microscopy, energy dispersive spectroscopy, electron energy loss spectroscopy, and particle size distribution analyses. This report contains tables that can be used as a quick reference to identify the crystal phases present observed in Hanford waste.

  20. Microgrid cyber security reference architecture.

    SciTech Connect (OSTI)

    Veitch, Cynthia K.; Henry, Jordan M.; Richardson, Bryan T.; Hart, Derek H.

    2013-07-01T23:59:59.000Z

    This document describes a microgrid cyber security reference architecture. First, we present a high-level concept of operations for a microgrid, including operational modes, necessary power actors, and the communication protocols typically employed. We then describe our motivation for designing a secure microgrid; in particular, we provide general network and industrial control system (ICS)-speci c vulnerabilities, a threat model, information assurance compliance concerns, and design criteria for a microgrid control system network. Our design approach addresses these concerns by segmenting the microgrid control system network into enclaves, grouping enclaves into functional domains, and describing actor communication using data exchange attributes. We describe cyber actors that can help mitigate potential vulnerabilities, in addition to performance bene ts and vulnerability mitigation that may be realized using this reference architecture. To illustrate our design approach, we present a notional a microgrid control system network implementation, including types of communica- tion occurring on that network, example data exchange attributes for actors in the network, an example of how the network can be segmented to create enclaves and functional domains, and how cyber actors can be used to enforce network segmentation and provide the neces- sary level of security. Finally, we describe areas of focus for the further development of the reference architecture.

  1. Reference Inflow Characterization for River Resource Reference Model (RM2)

    SciTech Connect (OSTI)

    Neary, Vincent S [ORNL

    2011-12-01T23:59:59.000Z

    Sandia National Laboratory (SNL) is leading an effort to develop reference models for marine and hydrokinetic technologies and wave and current energy resources. This effort will allow the refinement of technology design tools, accurate estimates of a baseline levelized cost of energy (LCoE), and the identification of the main cost drivers that need to be addressed to achieve a competitive LCoE. As part of this effort, Oak Ridge National Laboratory was charged with examining and reporting reference river inflow characteristics for reference model 2 (RM2). Published turbulent flow data from large rivers, a water supply canal and laboratory flumes, are reviewed to determine the range of velocities, turbulence intensities and turbulent stresses acting on hydrokinetic technologies, and also to evaluate the validity of classical models that describe the depth variation of the time-mean velocity and turbulent normal Reynolds stresses. The classical models are found to generally perform well in describing river inflow characteristics. A potential challenge in river inflow characterization, however, is the high variability of depth and flow over the design life of a hydrokinetic device. This variation can have significant effects on the inflow mean velocity and turbulence intensity experienced by stationary and bottom mounted hydrokinetic energy conversion devices, which requires further investigation, but are expected to have minimal effects on surface mounted devices like the vertical axis turbine device designed for RM2. A simple methodology for obtaining an approximate inflow characterization for surface deployed devices is developed using the relation umax=(7/6)V where V is the bulk velocity and umax is assumed to be the near-surface velocity. The application of this expression is recommended for deriving the local inflow velocity acting on the energy extraction planes of the RM2 vertical axis rotors, where V=Q/A can be calculated given a USGS gage flow time-series and stage vs. cross-section area rating relationship.

  2. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28T23:59:59.000Z

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  3. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  4. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si1ÀyGey, and Si/Ge

  5. Reference electrode for electrolytic cell

    DOE Patents [OSTI]

    Kessie, R.W.

    1988-07-28T23:59:59.000Z

    A reference electrode device is provided for a high temperature electrolytic cell used to electrolytically recover uranium from spent reactor fuel dissolved in an anode pool, the device having a glass tube to enclose the electrode and electrolyte and serve as a conductive membrane with the cell electrolyte, and an outer metal tube about the glass tube to serve as a shield and basket for any glass sections broken by handling of the tube to prevent their contact with the anode pool, the metal tube having perforations to provide access between the bulk of the cell electrolyte and glass membrane. 4 figs.

  6. PVWatts Version 1 Technical Reference

    SciTech Connect (OSTI)

    Dobos, A. P.

    2013-10-01T23:59:59.000Z

    The NREL PVWatts(TM) calculator is a web application developed by the National Renewable Energy Laboratory (NREL) that estimates the electricity production of a grid-connected photovoltaic system based on a few simple inputs. PVWatts combines a number of sub-models to predict overall system performance, and makes several hidden assumptions about performance parameters. This technical reference details the individual sub-models, documents assumptions and hidden parameters, and explains the sequence of calculations that yield the final system performance estimation.

  7. Tips: References | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you sure you want toworldPower 2010 1 TNews & SolarLaundryReferences Tips:

  8. References | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA Approved:AdministrationAnalysis andBHoneywell9/%2A en7/%2ANationalReferences

  9. Tips: References | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the.pdfBreakingMayDepartmentTest for PumpingThe| Department ofAir DuctsTips:References Tips:

  10. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  11. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  12. High stability wavefront reference source

    DOE Patents [OSTI]

    Feldman, M.; Mockler, D.J.

    1994-05-03T23:59:59.000Z

    A thermally and mechanically stable wavefront reference source which produces a collimated output laser beam is disclosed. The output beam comprises substantially planar reference wavefronts which are useful for aligning and testing optical interferometers. The invention receives coherent radiation from an input optical fiber, directs a diverging input beam of the coherent radiation to a beam folding mirror (to produce a reflected diverging beam), and collimates the reflected diverging beam using a collimating lens. In a class of preferred embodiments, the invention includes a thermally and mechanically stable frame comprising rod members connected between a front end plate and a back end plate. The beam folding mirror is mounted on the back end plate, and the collimating lens mounted to the rods between the end plates. The end plates and rods are preferably made of thermally stable metal alloy. Preferably, the input optical fiber is a single mode fiber coupled to an input end of a second single mode optical fiber that is wound around a mandrel fixedly attached to the frame of the apparatus. The output end of the second fiber is cleaved so as to be optically flat, so that the input beam emerging therefrom is a nearly perfect diverging spherical wave. 7 figures.

  13. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  14. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

  15. GE Teams with NY College to Pilot SOFC Technology |GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to...

  16. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap...

  17. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year...

  18. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4?GPa of tensile stress to be obtained.

  19. ILC Reference Design Report: Accelerator Executive Summary

    SciTech Connect (OSTI)

    Phinney, Nan; /SLAC

    2007-12-14T23:59:59.000Z

    The International Linear Collider (ILC) is a 200-500 GeV center-of-mass high-luminosity linear electron-positron collider, based on 1.3 GHz superconducting radiofrequency (SCRF) accelerating cavities. The use of the SCRF technology was recommended by the International Technology Recommendation Panel (ITRP) in August 2004 [1], and shortly thereafter endorsed by the International Committee for Future Accelerators (ICFA). In an unprecedented milestone in high-energy physics, the many institutes around the world involved in linear collider R&D united in a common effort to produce a global design for the ILC. In November 2004, the 1st International Linear Collider Workshop was held at KEK, Tsukuba, Japan. The workshop was attended by some 200 accelerator physicists from around the world, and paved the way for the 2nd ILC Workshop in August 2005, held at Snowmass, Colorado, USA, where the ILC Global Design Effort (GDE) was officially formed. The GDE membership reflects the global nature of the collaboration, with accelerator experts from all three regions (Americas, Asia and Europe). The first major goal of the GDE was to define the basic parameters and layout of the machine--the Baseline Configuration. This was achieved at the first GDE meeting held at INFN, Frascati, Italy in December 2005 with the creation of the Baseline Configuration Document (BCD). During the next 14 months, the BCD was used as the basis for the detailed design work and value estimate (as described in section 1.6) culminating in the completion of the second major milestone, the publication of the draft ILC Reference Design Report (RDR). The technical design and cost estimate for the ILC is based on two decades of world-wide Linear Collider R&D, beginning with the construction and operation of the SLAC Linear Collider (SLC). The SLC is acknowledged as a proof-of-principle machine for the linear collider concept. The ILC SCRF linac technology was pioneered by the TESLA collaboration*, culminating in a proposal for a 500 GeV center-of-mass linear collider in 2001 [2]. The concurrent (competing) design work on a normal conducting collider (NLC with X-band [3] and GLC with X- or C-Band [4]), has advanced the design concepts for the ILC injectors, Damping Rings (DR) and Beam Delivery System (BDS), as well as addressing overall operations, machine protection and availability issues. The X- and C-band R&D has led to concepts for the RF power source that may eventually produce either cost and/or performance benefits. Finally, the European XFEL [5] to be constructed at DESY, Hamburg, Germany, will make use of the TESLA linac technology, and represents a significant on-going R&D effort which remains of great benefit for the ILC. The current ILC baseline assumes an accelerating gradient of 31.5 MV/m to achieve a centre-of-mass energy of 500 GeV. The high luminosity requires the use of high power and small emittance beams. The choice of 1.3 GHz SCRF is well suited to the requirements, primarily because the very low power loss in the SCRF cavity walls allows the use of long RF pulses, relaxing the requirements on the peak-power generation, and ultimately leading to high wall-plug to beam transfer efficiency. The primary cost drivers are the SCRF Main Linac technology and the Conventional Facilities (including civil engineering). The choice of gradient is a key cost and performance parameter, since it dictates the length of the linacs, while the cavity quality factor (Q{sub 0}) relates to the required cryogenic cooling power. The achievement of 31.5 MV/m as the baseline average operational accelerating gradient--requiring a minimum performance of 35 MV/m during cavity mass-production acceptance testing--represents the primary challenge to the global ILC R&D With the completion of the RDR, the GDE will shortly begin an engineering design study, closely coupled with a prioritized R&D program. The goal is to produce an Engineering Design Report (EDR) demonstrating readiness for construction by 2010, followed by start of construction in 2012. A seve

  20. The Majorana Ge-76 double-beta decay project

    SciTech Connect (OSTI)

    Avignone, Frank Titus [ORNL

    2010-01-01T23:59:59.000Z

    The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

  1. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ok GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma...

  2. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Meet & Greet GE Researchers at ASME Turbo 2014 Thomas Ripplinger 2014.06.10 Do you love gas turbine research as much as I do? Then I want to meet you next week Since joining GE...

  3. Driving Sensing Technology in Oil & Gas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a bit more about Bill's work. Bill joined GE Global Research in 2010. For the past four years his emphasis has been on developing advanced photonics technologies for multiple GE...

  4. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

    2013-12-04T23:59:59.000Z

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

  5. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-03-11T23:59:59.000Z

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  6. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07T23:59:59.000Z

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  7. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07T23:59:59.000Z

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  8. National Environmental Information Infrastructure Reference Architecture

    E-Print Network [OSTI]

    Greenslade, Diana

    National Environmental Information Infrastructure Reference Architecture Consultation Draft Environmental Information Infrastructure Reference Architecture: Consultation Draft Environmental Information Architecture: Consultation Draft, Bureau of Meteorology, Canberra, Australia, pp. 52. With the exception

  9. Cross-References Applications of Nanofluidics

    E-Print Network [OSTI]

    Zhigilei, Leonid V.

    Cross-References Applications of Nanofluidics Electrokinetic Fluid Flow in Nanostructures Micro/Nano Flow Characterization Techniques Nanochannels for Nanofluidics: Fabrication Aspects Rapid Electrokinetic Patterning References 1. Conlisk, A.T.: Essentials of Micro and Nanofluidics with Application

  10. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  11. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01T23:59:59.000Z

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  12. Ge.Meyer -MPL-27.11.002 Status Tunerentwicklung

    E-Print Network [OSTI]

    Ge.Meyer -MPL- 27.11.002 Status Tunerentwicklung 1) Geschichte: Alter franz. Tuner weich, hatte Hysterese. Federkonstante: Gerechnet 5,4 µ/kN, gemessen 26,7 µ/kN (Faktor 5), Ge.Meyer gerechnet 14,6 µ Felder. 2) Tuner 0 / H.Kaiser, Ge.Meyer -MPL- Deshalb wurde ein neues Konzept überlegt. Dieses Konzept

  13. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  14. Economic Impact of Standard Reference Materials

    E-Print Network [OSTI]

    00-1 Planning Report Economic Impact of Standard Reference Materials for Sulfur in Fossil Fuels Administration #12;February 2000 Economic Impact of Standard Reference Materials for Sulfur in Fossil Fuels Final-006 Economic Impact of Standard Reference Materials for Sulfur in Fossil Fuels Final Report February 2000

  15. Reference Phase of Fresnel Zone Plates

    E-Print Network [OSTI]

    G. W. Webb

    2003-02-28T23:59:59.000Z

    The standard zone plate assumes that the shortest ray connecting a radiation source and a detection point has a phase of 0 deg thereby defining a reference phase. Here we examine the experimental consequences of varying this reference phase from 0 deg to 360 deg. It is concluded that reference phase is an intrinsic and useful property of zone plates.

  16. A comprehensive understanding of the efficacy of N-Ring hardening methodologies in SiGe HBTs.

    SciTech Connect (OSTI)

    Phillips, Stanley D.; Dodd, Paul Emerson; Cressler, John D.; Vizkelethy, Gyorgy; Najafizadeh, Laleh; Diestelhorst, Ryan; Moen, Kurt A.; Sutton, Akil K.

    2010-05-01T23:59:59.000Z

    We investigate the efficacy of mitigating radiation-based single event effects (SEE) within circuits incorporating SiGe heterojunction bipolar transistors (HBTs) built with an N-Ring, a transistor-level layout-based radiation hardened by design (RHBD) technique. Previous work of single-device ion-beam induced charge collection (IBICC) studies has demonstrated significant reductions in peak collector charge collection and sensitive area for charge collection; however, few circuit studies using this technique have been performed. Transient studies performed with Sandia National Laboratory's (SNL) 36 MeV 16O microbeam on voltage references built with N-Ring SiGe HBTs have shown mixed results, with reductions in the number of large voltage disruptions in addition to new sensitive areas of low-level output voltage disturbances. Similar discrepancies between device-level IBICC results and circuit measurements are found for the case of digital shift registers implemented with N-Ring SiGe HBTs irradiated in a broadbeam environment at Texas A&M's Cyclotron Institute. The error cross-section curve of the N-Ring based register is found to be larger at larger ion LETs than the standard SiGe register, which is clearly counter-intuitive. We have worked to resolve the discrepancy between the measured circuit results and the device-level IBICC measurements, by re-measuring single-device N-Ring SiGe HBTs using a time-resolved ion beam induced charge (TRIBIC) set-up that allows direct capture of nodal transients. Coupling these measurements with full 3-D TCAD simulations provides complete insight into the origin of transient currents in an N-Ring SiGe HBT. The detailed structure of these transients and their bias dependencies are discussed, together with the ramifications for the design of space-borne analog and digital circuits using SiGe HBTs.

  17. 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 711, 2001

    E-Print Network [OSTI]

    Leonard, John J.

    Preface 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 7­11, 2001 The International Lie`ge Colloquium on Ocean Dynamics is organized annually. The topic differs from year to year. Assembling a group of active and eminent scien- tists from various countries and often different disci

  18. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01T23:59:59.000Z

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  19. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24T23:59:59.000Z

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  20. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  1. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28T23:59:59.000Z

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  2. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  3. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  4. Upgrade of CEBAF from 6-GeV To 12-GeV: Status

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-04-01T23:59:59.000Z

    The CEBAF accelerator is being upgraded from 6 GeV to 12 GeV by the US Department of Energy. The accelerator upgrade is being done within the existing tunnel footprint. The accelerator upgrade includes: 10 new srfbased high-performance cryomodules plus RF systems, doubling the 2K helium plants capability, upgrading the existing beamlines to operate at nearly double the original performance envelope, and adding a beamline to a new experimental area. Construction is over 75% complete with final completion projected for late FY13. Details of the upgrade and status of the work will be presented.

  5. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21T23:59:59.000Z

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  6. SiGe thin-film structures for solar cells

    SciTech Connect (OSTI)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31T23:59:59.000Z

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  7. A Short Reference Grammar of Standard Slovene

    E-Print Network [OSTI]

    Greenberg, Marc L.

    2006-01-01T23:59:59.000Z

    A reference grammar of the Slovene language designed for advanced-level language users and linguists to compare semantic categories across languages.

  8. Sandia National Laboratories: Reference Model 3

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reference Model 3 Sandia, NREL Release Wave Energy Converter Modeling and Simulation Code: WEC-Sim On July 29, 2014, in Computational Modeling & Simulation, Energy, News, News &...

  9. FAQS Reference Guide – General Technical Base

    Broader source: Energy.gov [DOE]

    This reference guide addresses the competency statements in the December 2007 edition of DOE-STD-1146-2007, General Technical Base Functional Area Qualification Standard.

  10. Sandia National Laboratories: Reference Model Project

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    marine hydrokinetic (MHK) reference models (RMs) for wave energy converters and tidal, ocean, and river current energy converters. The RMP team includes a partnership between...

  11. Sandia National Laboratories: marine hydrokinetic reference models

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    marine hydrokinetic (MHK) reference models (RMs) for wave energy converters and tidal, ocean, and river current energy converters. The RMP team includes a partnership between...

  12. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPO WebsitePalms Village ResortEnergyL L 2PatentGE's E.

  13. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE, MIT

  14. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE,

  15. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess Stories Site MapSolarAboutTaubmanBiofuels Research at GE's

  16. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  17. FAQS Reference Guide - Quality Assurance | Department of Energy

    Office of Environmental Management (EM)

    Reference Guide - Quality Assurance FAQS Reference Guide - Quality Assurance This reference guide has been developed to address the competency statements in the April 2002 edition...

  18. A New Look at the Galactic Diffuse GeV

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    ;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected #12;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected Physics 1 #12;Overview Diffuse gamma-ray emission The Galactic diffuse gamma-ray GeV excess Discussion

  19. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21T23:59:59.000Z

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  20. Archived Reference Building Type: Primary school

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed before 1980, organized by building type and location. A summary ofbuilding types and climate zones is available for reference. Current versions are also available.

  1. Archived Reference Building Type: Primary school

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed in or after 1980, organized by building type and location. A summary of building types and climate zones is available for reference. Current versions are also available.

  2. Physics 321 Accelerating Reference Frames II

    E-Print Network [OSTI]

    Hart, Gus

    Physics 321 Hour 25 Accelerating Reference Frames II Consider an accelerating train car Proof 0 and S is a frame rotating with angular velocity . Examples Handout rotation.nb #12;Physics 321 Hour 26 Accelerating Reference Frames III Velocities in Rotating Frames in S0 basis in S' basis In S' basis in S0 basis

  3. Archived Reference Building Type: Outpatient health care

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed in or after 1980, organized by building type and location. A summary of building types and climate zones is available for reference. Current versions are also available.

  4. Archived Reference Building Type: Outpatient health care

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed before 1980, organized by building type and location. A summary ofbuilding types and climate zones is available for reference. Current versions are also available.

  5. Degradation of a quantum reference frame

    E-Print Network [OSTI]

    Stephen D. Bartlett; Terry Rudolph; Robert W. Spekkens; Peter S. Turner

    2006-04-20T23:59:59.000Z

    We investigate the degradation of reference frames, treated as dynamical quantum systems, and quantify their longevity as a resource for performing tasks in quantum information processing. We adopt an operational measure of a reference frame's longevity, namely, the number of measurements that can be made against it with a certain error tolerance. We investigate two distinct types of reference frame: a reference direction, realized by a spin-j system, and a phase reference, realized by an oscillator mode with bounded energy. For both cases, we show that our measure of longevity increases quadratically with the size of the reference system and is therefore non-additive. For instance, the number of measurements that a directional reference frame consisting of N parallel spins can be put to use scales as N^2. Our results quantify the extent to which microscopic or mesoscopic reference frames may be used for repeated, high-precision measurements, without needing to be reset - a question that is important for some implementations of quantum computing. We illustrate our results using the proposed single-spin measurement scheme of magnetic resonance force microscopy.

  6. Libraries Reference Copyright 1996 -2003 Intel Corporation

    E-Print Network [OSTI]

    Fossati, Giovanni

    Intel® Fortran Libraries Reference Copyright © 1996 - 2003 Intel Corporation All Rights Reserved PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustain- ing applications. This Intel® Fortran Libraries Reference as well as the software described in it is furnished

  7. Archived Reference Building Type: Strip mall

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed in or after 1980, organized by building type and location. A summary of building types and climate zones is available for reference. Current versions are also available.

  8. Archived Reference Building Type: Strip mall

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed before 1980, organized by building type and location. A summary ofbuilding types and climate zones is available for reference. Current versions are also available.

  9. Archived Reference Building Type: Medium office

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed in or after 1980, organized by building type and location. A summary of building types and climate zones is available for reference. Current versions are also available.

  10. Archived Reference Building Type: Medium office

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed before 1980, organized by building type and location. A summary ofbuilding types and climate zones is available for reference. Current versions are also available.

  11. Archived Reference Building Type: Secondary school

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed in or after 1980, organized by building type and location. A summary of building types and climate zones is available for reference. Current versions are also available.

  12. Archived Reference Building Type: Secondary school

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the commercial reference building models for existing buildings constructed before 1980, organized by building type and location. A summary ofbuilding types and climate zones is available for reference. Current versions are also available.

  13. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01T23:59:59.000Z

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  14. GE Technology to Help Canada Province Meet Growing Energy Needs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

  15. Limitless Hot Gas Path Cooling Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Organization at GE Global Research, one such potent combination already taking shape is Additive Manufacturing and High Pressure Turbine Blade Cooling. Additive Manufacturing...

  16. GE researchers perform simulations in pursuit of more efficient...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE researchers perform simulations in pursuit of more efficient jet engines and wind turbines Author: John Spizzirri . July 1, 2014 Printer-friendly version The recent addition of...

  17. How Will We Explore Earth's Final Frontier? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    see how technology is helping us understand, utilize and protect the last frontier on earth. At GE Global Research's Rio de Janiero location, researchers are developing...

  18. Media Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for its 310 million 12 GeV Upgrade project. When: Tuesday, April 14, 2009. Where: CEBAF Center, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue,...

  19. GE's Arnie Lund Discusses User Experience at an Industrial Scale...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the Farstuff Podcast about...

  20. approaching cryogenic ge: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Very low Weinreb, Sander 2 Draft 040509 A new high-background-rejection dark matter Ge cryogenic Computer Technologies and Information Sciences Websites Summary: Draft...

  1. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  2. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15T23:59:59.000Z

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  3. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    SciTech Connect (OSTI)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16T23:59:59.000Z

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  4. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12T23:59:59.000Z

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  5. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  6. High Capacity Li Ion Battery Anodes Using Ge Nanowires

    E-Print Network [OSTI]

    Cui, Yi

    High Capacity Li Ion Battery Anodes Using Ge Nanowires Candace K. Chan, Xiao Feng Zhang, and Yi Cui efficiency > 99%. Structural characterization revealed that the Ge nanowires remain intact and connected nanowire anodes are promising candidates for the development of high-energy-density lithium batteries

  7. Project-X Workshop 120 GeV Target

    E-Print Network [OSTI]

    McDonald, Kirk

    Project-X Workshop 120 GeV Target Summary ­ Workshop # 1 N. Simos, M. Martens #12;Project-X Workshop Challenges OVERVIEW Driven by 120 GeV/170 TP-per-spill · Short Term: 170 TPs/2us-spill (materials an existing 400 kW facility ­ Constraints #12;Project-X Workshop Presentations - Discussions · Engineering

  8. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  9. Excess vacancies in high energy ion implanted SiGe

    SciTech Connect (OSTI)

    Koegler, R.; Muecklich, A.; Skorupa, W.; Peeva, A.; Kuznetsov, A. Yu.; Christensen, J. S.; Svensson, B. G. [Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden (Germany); Institute of Solid State Physics BAS, Boulevard Tzarigradsko Chaussee 72, 1784 Sofia (Bulgaria); Deparment of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2007-02-01T23:59:59.000Z

    Excess vacancies generated by high energy implantation with 1.2 MeV Si{sup +} and 2 MeV Ge{sup +} ions in SiGe were investigated after rapid thermal annealing at 900 degree sign C. Excess vacancies were probed by decoration with Cu and measuring the Cu profile by secondary ion mass spectrometry. Cross section transmission electron microscopy of cleaved specimen enabled to visualize nanocavities resulting from agglomeration of excess vacancies. The ion-induced damage in SiGe increases with increasing Ge fraction of the alloy. The amorphization threshold decreases and the extension of a buried amorphous layer increases for given implantation and annealing conditions. In contrast to ballistic simulations of excess defect generation where perfect local self-annihilation is assumed the concentrations of excess vacancies and excess interstitials in SiGe increase with increasing Ge fraction. The main contribution to the high excess vacancy concentration in SiGe results from the inefficient recombination of vacancies and interstitials. The widely used +1 model describing the ion-induced damage in Si is not valid for SiGe.

  10. Volcanic rifting at Martian grabens Daniel Me`ge,1

    E-Print Network [OSTI]

    Mege, Daniel

    Volcanic rifting at Martian grabens Daniel Me`ge,1 Anthony C. Cook,2,3 Erwan Garel,4 Yves: Solar System Objects: Mars; 8121 Tectonophysics: Dynamics, convection currents and mantle plumes; 8010: Me`ge, D., A. C. Cook, E. Garel, Y. Lagabrielle, and M.-H. Cormier, Volcanic rifting at Martian

  11. Introducing Reference Semantics via Refinement Graeme Smith

    E-Print Network [OSTI]

    Smith, Graeme

    Introducing Reference Semantics via Refinement Graeme Smith Software Verification Research Centre, University of Queensland, Australia smith@svrc.uq.edu.au Abstract. Two types of semantics have been given

  12. An expectation model of referring expressions

    E-Print Network [OSTI]

    Kræmer, John, Ph. D. Massachusetts Institute of Technology

    2010-01-01T23:59:59.000Z

    This thesis introduces EMRE, an expectation-based model of referring expressions. EMRE is proposed as a model of non-syntactic dependencies - in particular, discourse-level semantic dependencies that bridge sentence gaps. ...

  13. Archive Reference Buildings by Building Type: Supermarket

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the reference buildings for new construction commercial buildings, organized by building type and location. A summary of building types and climate zones is...

  14. Archive Reference Buildings by Building Type: Warehouse

    Broader source: Energy.gov [DOE]

    Here you will find past versions of the reference buildings for new construction commercial buildings, organized by building type and location. A summary of building types and climate zones is...

  15. Generating and interpreting referring expressions in context

    E-Print Network [OSTI]

    Smith, Dustin Arthur

    2013-01-01T23:59:59.000Z

    Referring expressions with vague and ambiguous modifiers, such as "a quick visit" and "the big meeting," are difficult for computers to interpret because their meanings are defined in part by context. For the hearer to ...

  16. Clause chaining, switch reference and coordination

    E-Print Network [OSTI]

    Nonato, Rafael

    2014-01-01T23:59:59.000Z

    In this thesis I ponder over a constellation of phenomena that revolve around switch reference and coordination, drawing mainly on their instantiation in Kisedje (Je, Brazil). I start by investigating Klsedje's case system. ...

  17. Libraries Reference Document Number: 253262-002

    E-Print Network [OSTI]

    Talbot, James P.

    Intel® Fortran Libraries Reference Document Number: 253262-002 World Wide Web: http PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustain- ing.................................................................................... xxiv Chapter 1 Overview of the Libraries Portability Routines

  18. Integrating Referring and Informing in NP Planning 

    E-Print Network [OSTI]

    O'Donnell, Michael; Knott, Alistair; Hitzeman, Janet; Cheng, Hua

    Two of the functions of an NP are to refer (identify a particular entity) and to inform (provide new information about an entity). While many NPs may serve only one of these functions, some NPs conflate the functions, ...

  19. FAQS Reference Guide – Safety Software Quality Assurance

    Broader source: Energy.gov [DOE]

    This reference guide has been developed to address the competency statements in the (March 2011) edition of DOE-STD-1172-2011, Safety Software Quality Assurance Functional Area Qualification Standard.

  20. Defining Reference Information for Restoring Ecologically Rare

    E-Print Network [OSTI]

    . In particular, we assess the constraints that arise when refer- ence information from various sources is ei type that occurs across temperate and tropical regions and is characterized by scattered, open- grown

  1. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10T23:59:59.000Z

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  2. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe J. Akola1,2 and R. O. Jones1 1Institut für Festkörperforschung, Forschungszentrum to characterize the amorphous structure of the prototype materials Ge2Sb2Te5 and GeTe. In both, there is long

  3. III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth

    E-Print Network [OSTI]

    III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 110 SiGe Single, West Lafayette, IN 47907, U.S.A. Nanodevices on Si/SiGe heterostructures are of growing interest [1 the performance of the devices. In this paper, we demonstrate a reproducible single-hole transistor SiGe device

  4. The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites

    E-Print Network [OSTI]

    Tomar, Vikas

    The role of straining and morphology in thermal conductivity of a set of Si­Ge superlattices and biomimetic Si­Ge nanocomposites This article has been downloaded from IOPscience. Please scroll down to see and morphology in thermal conductivity of a set of Si­Ge superlattices and biomimetic Si­Ge nanocomposites Vikas

  5. Quantum communication, reference frames and gauge theory

    E-Print Network [OSTI]

    S. J. van Enk

    2006-04-26T23:59:59.000Z

    We consider quantum communication in the case that the communicating parties not only do not share a reference frame but use imperfect quantum communication channels, in that each channel applies some fixed but unknown unitary rotation to each qubit. We discuss similarities and differences between reference frames within that quantum communication model and gauge fields in gauge theory. We generalize the concept of refbits and analyze various quantum communication protocols within the communication model.

  6. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14T23:59:59.000Z

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  7. "Analysis of SOFCs using reference electrodes?

    SciTech Connect (OSTI)

    Finklea, Harry; Chen,Xiaoke; Gerdes,Kirk; Pakalapati, Suryanarayana; Celik, Ismail

    2013-07-01T23:59:59.000Z

    Reference electrodes are frequently applied to isolate the performance of one electrode in a solid oxide fuel cell. However, reference electrode simulations raise doubt to veracity of data collected using reference electrodes. The simulations predict that the reported performance for the one electrode will frequently contain performance of both electrodes. Nonetheless, recent reports persistently treat data so collected as ideally isolated. This work confirms the predictions of the reference electrode simulations on two SOFC designs, and to provides a method of validating the data measured in the 3-electrode configuration. Validation is based on the assumption that a change in gas composition to one electrode does not affect the impedance of the other electrode at open circuit voltage. This assumption is supported by a full physics simulation of the SOFC. Three configurations of reference electrode and cell design are experimentally examined using various gas flows and two temperatures. Impedance data are subjected to deconvolution analysis and equivalent circuit fitting and approximate polarization resistances of the cathode and anode are determined. The results demonstrate that the utility of reference electrodes is limited and often wholly inappropriate. Reported impedances and single electrode polarization values must be scrutinized on this basis.

  8. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01T23:59:59.000Z

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  9. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01T23:59:59.000Z

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  10. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01T23:59:59.000Z

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  11. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01T23:59:59.000Z

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  12. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01T23:59:59.000Z

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  13. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  14. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04T23:59:59.000Z

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  15. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M., E-mail: nicolau.bom@ufrgs.br [PGMICRO, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Soares, G. V.; Hartmann, S.; Bordin, A. [Instituto de Física, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Radtke, C. [Instituto de Química, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)

    2014-10-06T23:59:59.000Z

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  16. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  17. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26T23:59:59.000Z

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  18. Efficient tunable luminescence of SiGe alloy sheet polymers

    SciTech Connect (OSTI)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-06-18T23:59:59.000Z

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si{sub 1{minus}x}Ge{sub x}){sub 2} precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. {copyright} 2001 American Institute of Physics.

  19. Spin-polarized photoemission from SiGe heterostructures

    SciTech Connect (OSTI)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04T23:59:59.000Z

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  20. Optical absorption in highly-strained Ge/SiGe quantum wells: the role of ?-to-? scattering

    E-Print Network [OSTI]

    L. Lever; Z. Ikoni?; A. Valavanis; R. W. Kelsall; M. Myronov; D. R. Leadley; Y. Hu; N. Owens; F. Y. Gardes; G. T. Reed

    2013-02-28T23:59:59.000Z

    We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the \\Gamma-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the \\Gamma-valley carrier lifetimes by evaluating the \\Gamma-to-L and \\Gamma-to-\\Delta{} scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically-varied dimensions. We find that \\Gamma-to-\\Delta{} scattering is significant in compressively strained Ge quantum wells and that the \\Gamma-valley electron lifetime is less than 50 fs in the highly-strained structures reported here, where \\Gamma-to-\\Delta{} scattering accounted for approximately half of the total scattering rate.

  1. Exploring Jet Properties in p-p Collisions at 200 GeV with STAR

    E-Print Network [OSTI]

    Helen Caines

    2009-10-06T23:59:59.000Z

    The mechanisms underlying hadronization are not well understood, both in vacuum and in hot QCD matter. Precise characterization of jet fragmentation to hadrons in p-p collisions will help elucidate the fundamental process of hadronization, and will serve as essential reference to measure the modification of hadronization in heavy ion collisions. We present measurements of fragmentation functions for unidentified particles in jets produced in p-p collisions at 200 GeV using the STAR detector at RHIC. The results from different jet reconstruction algorithms are compared, including variations of the resolution parameter. It is found that the results are largely insensitive to details of the jet-finding algorithm at RHIC energies. Particle production inside and outside of these reconstructed jets will be compared to improve our understanding of the hadronization mechanisms for soft and hard particles in p-p events at RHIC energies.

  2. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell isOklahoma City, USAGE BBQ Center isThe GE

  3. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19T23:59:59.000Z

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  4. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25T23:59:59.000Z

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  5. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10T23:59:59.000Z

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  6. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our...

  7. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  8. Taking on the World's Toughest Problems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    direct write2square The GE Store for Technology is Open for Business 2-4-13-v-3d-printing-medical-devices Invention Factory: How Will The World Get Smaller? ...

  9. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick [University of Texas at Austin; Fredrickson, Kurt [University of Texas at Austin; Posadas, Agham B. [University of Texas at Austin; Ren, Yuan [University of Texas at Austin; Vasudevan, Rama K [ORNL; Okatan, Mahmut Baris [ORNL; Jesse, Stephen [ORNL; Aoki, Toshihiro [Arizona State University; McCartney, Martha [Arizona State University; Smith, David J [Arizona State University; Kalinin, Sergei V [ORNL; Lai, Keji [University of Texas at Austin; Demkov, Alexander A. [University of Texas at Austin

    2015-01-01T23:59:59.000Z

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  10. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  11. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01T23:59:59.000Z

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  12. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  13. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09T23:59:59.000Z

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  14. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  15. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light...

  16. GE Software Expert Julian Keith Loren Discusses Innovation and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window)...

  17. Technology "Relay Race" Against Cancer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Scientists in Technology "Relay Race" Against Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  18. An Update on the Brazil Tech Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    desde meu ultimo update a voces sobre o Centro de Pesquisas da GE no Rio de Janeiro, Brasil e tambm minha terra natal 2011 foi um timo ano para mim. Depois de viver na...

  19. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens...

  20. ECS Transactions 3, (7), 1211-1222 (2006) Characterization of Strained Si/SiGe with Raman, Pulsed MOS Capacitor

    E-Print Network [OSTI]

    Schroder, Dieter K.

    2006-01-01T23:59:59.000Z

    ECS Transactions 3, (7), 1211-1222 (2006) 1211 Characterization of Strained Si/SiGe with Raman silicon/relaxed SiGe/graded SiGe/Si samples. The effective generation lifetime depends on the defect defective SiGe. GOI statistical analysis shows worsening oxide breakdown as the Ge concentration in the SiGe

  1. Collected References, available on-line as , updated 23-Feb-14 References for: Gio Wiederhold

    E-Print Network [OSTI]

    Stanford University

    .6] [Abba:97] Wayne Abba: "Earned Value Management: Reconciling Government and Commercial Practices-14 1 References for: Gio Wiederhold: Valuing Intellectual Capital, Multinationals and Taxhavens is italicized. Entries cited and listed in the Reference section of Valuing Intelectual Capital have [bold

  2. NIST Standard Reference Database 23 NIST Reference Fluid Thermodynamic and Transport Properties--

    E-Print Network [OSTI]

    Magee, Joseph W.

    -Conditioning and Refrigeration Technology Institute and the U.S. Department of Energy. The development of the models on which#12;NIST Standard Reference Database 23 NIST Reference Fluid Thermodynamic and Transport Properties Properties Division National Institute of Standards and Technology Boulder, Colorado 80305 April, 2007 U

  3. NIST Standard Reference Database 23 NIST Reference Fluid Thermodynamic and Transport Properties--

    E-Print Network [OSTI]

    Technology Institute and the U.S. Department of Energy. Model development and measurements at NIST have been#12;NIST Standard Reference Database 23 NIST Reference Fluid Thermodynamic and Transport Properties Division National Institute of Standards and Technology Boulder, Colorado 80305 November, 2010 U

  4. Kyoto University Libraries Reference Guide 1. Compare the reference style of books and journals

    E-Print Network [OSTI]

    Takada, Shoji

    Kyoto University Libraries Reference Guide 1. Compare the reference style of books and journals Ex Publisher Year of Publications Pages Ex.3) The basic style of journal articles Fidel, Raya; Green, Maurice -Distinguishing kinds of documents- Ver.1.1, 2008.03.26, Yumi Sugimoto (Eng.Arch.Library), Ver.2.0, 2014

  5. The Jefferson Lab 12 GeV Upgrade

    E-Print Network [OSTI]

    McKeown, R D

    2010-01-01T23:59:59.000Z

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program.

  6. The Jefferson Lab 12 GeV Upgrade

    E-Print Network [OSTI]

    R. D. McKeown

    2010-09-22T23:59:59.000Z

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program.

  7. INVESTIGATION Construction of Reference Chromosome-Scale

    E-Print Network [OSTI]

    Douches, David S.

    INVESTIGATION Construction of Reference Chromosome-Scale Pseudomolecules for Potato: Integrating was genotyped with several types of molecular genetic markers to construct a new ~936 cM linkage map comprising and orientation within the pseudo- molecules are closely collinear with independently constructed high density

  8. Risk Management Steering Committee Terms of Reference

    E-Print Network [OSTI]

    Victoria, University of

    Risk Management Steering Committee Terms of Reference October 2009 1.0 Purpose The purposes Facilities Management Risk and Insurance Analyst Associate Vice-President Human Resources Administrative of the Steering Committee are: a) to follow a continuous process to understand and communicate risk from

  9. Previous Up Next Article From References: 0

    E-Print Network [OSTI]

    Stachó, László

    Previous Up Next Article Citations From References: 0 From Reviews: 0 MR561879 (81d:62015) 62E20 for the volume of the intersection of an n-dimensional simplex and an n-dimensional ball is also given. {For

  10. Previous Up Next Article From References: 0

    E-Print Network [OSTI]

    Stachó, László

    Previous Up Next Article Citations From References: 0 From Reviews: 0 MR1261496 (94k:49008) 49J35 of f on X × co(Y ). Here, co(Y ) is a certain simplex defined in the space of all real-valued functions

  11. Previous Up Next Article From References: 12

    E-Print Network [OSTI]

    Ghys, Étienne

    Previous Up Next Article Citations From References: 12 From Reviews: 3 MR939473 (89e:55015) 55N35(M, R) is the cohomology of singular cochains whose value on a singular simplex is bounded independent of the simplex. From the work of Gromov, one knows that bounded cohomology interacts in a delicate manner

  12. Positional reference system for ultraprecision machining

    DOE Patents [OSTI]

    Arnold, Jones B. (Knoxville, TN); Burleson, Robert R. (Clinton, TN); Pardue, Robert M. (Knoxville, TN)

    1982-01-01T23:59:59.000Z

    A stable positional reference system for use in improving the cutting tool-to-part contour position in numerical controlled-multiaxis metal turning machines is provided. The reference system employs a plurality of interferometers referenced to orthogonally disposed metering bars which are substantially isolated from machine strain induced position errors for monitoring the part and tool positions relative to the metering bars. A microprocessor-based control system is employed in conjunction with the plurality of position interferometers and part contour description data inputs to calculate error components for each axis of movement and output them to corresponding axis drives with appropriate scaling and error compensation. Real-time position control, operating in combination with the reference system, makes possible the positioning of the cutting points of a tool along a part locus with a substantially greater degree of accuracy than has been attained previously in the art by referencing and then monitoring only the tool motion relative to a reference position located on the machine base.

  13. Positional reference system for ultraprecision machining

    DOE Patents [OSTI]

    Arnold, J.B.; Burleson, R.R.; Pardue, R.M.

    1980-09-12T23:59:59.000Z

    A stable positional reference system for use in improving the cutting tool-to-part contour position in numerical controlled-multiaxis metal turning machines is provided. The reference system employs a plurality of interferometers referenced to orthogonally disposed metering bars which are substantially isolated from machine strain induced position errors for monitoring the part and tool positions relative to the metering bars. A microprocessor-based control system is employed in conjunction with the plurality of positions interferometers and part contour description data input to calculate error components for each axis of movement and output them to corresponding axis driven with appropriate scaling and error compensation. Real-time position control, operating in combination with the reference system, makes possible the positioning of the cutting points of a tool along a part locus with a substantially greater degree of accuracy than has been attained previously in the art by referencing and then monitoring only the tool motion relative to a reference position located on the machine base.

  14. REFERENCE GUIDE ENERGY CONSERVATION ASSISTANCE ACT (ECAA)

    E-Print Network [OSTI]

    with this requirement. Waste management guidance and plan template can be downloaded at http://www.energy that generate waste. Attachments: Energy Commission Waste Management Plan Guidance Waste Management Plan1 REFERENCE GUIDE ENERGY CONSERVATION ASSISTANCE ACT (ECAA) STATE ENERGY PROGRAM (SEP) AMERICAN

  15. Ris Energy Report 2 References chapter 3

    E-Print Network [OSTI]

    8 Risø Energy Report 2 References chapter 3 1. IEA (2001), World Energy Outlook, OECD/IEA 2001. 2, Rome. 3. UNDP (2000): World Energy Assessment, NY 2000. 4. WEC (2001): Survey of energy resources. World Energy Council, Lon- don. 5. Kaltschmitt (2001): Martin Kaltschmitt, Hans Hartmann (Hrsg

  16. Hazard Communication Program 1.0 REFERENCE

    E-Print Network [OSTI]

    de Lijser, Peter

    Hazard Communication Program 1.0 REFERENCE California Code of Regulations, Title 8, Sections 337 the properties and potential safety and health hazards of the materials which they use or to which they are exposed. Employees who use or may be exposed to potentially hazardous substances or harmful physical

  17. FOR OFFICE USE ONLY Referred to

    E-Print Network [OSTI]

    Wang, Xiaorui "Ray"

    : In Partial Fulfillment of the requirements of the degree of: in: REVIEW AND ACCEPTANCE - REQUIRED SIGNATURESFOR OFFICE USE ONLY Month/Year Graduation Referred to Approved Denied GRADUATE SCHOOL THESIS of this thesis or dissertation. EMBARGO REQUEST Instructions: Student may request a one-year embargo

  18. Terms of Reference Information Security Group

    E-Print Network [OSTI]

    Haase, Markus

    Terms of Reference Information Security Group Version 3.1 8 March 2011 © University of Leeds 2011 Security Group Information Security Management 3.1 (8/3/11) Page 2 of 4 Document Control Owner: Kevin Darley, IT Security Co-ordinator, Information Systems Services, University of Leeds Source Location: V

  19. Geoscience laser altimeter system - stellar reference system

    SciTech Connect (OSTI)

    Millar, Pamela S.; Sirota, J. Marcos [NASA Goddard Space Flight Center, Laser Remote Sensing Branch, Code 924, Greenbelt, Maryland, 20771 (United States); University of Maryland at Baltimore County, 5401 Wilkens Ave, Baltimore, Maryland, 21228-5398 (United States)

    1998-01-15T23:59:59.000Z

    GLAS is an EOS space-based laser altimeter being developed to profile the height of the Earth's ice sheets with {approx}15 cm single shot accuracy from space under NASA's Mission to Planet Earth (MTPE). The primary science goal of GLAS is to determine if the ice sheets are increasing or diminishing for climate change modeling. This is achieved by measuring the ice sheet heights over Greenland and Antarctica to 1.5 cm/yr over 100 kmx100 km areas by crossover analysis (Zwally 1994). This measurement performance requires the instrument to determine the pointing of the laser beam to {approx}5 urad (1 arcsecond), 1-sigma, with respect to the inertial reference frame. The GLAS design incorporates a stellar reference system (SRS) to relate the laser beam pointing angle to the star field with this accuracy. This is the first time a spaceborne laser altimeter is measuring pointing to such high accuracy. The design for the stellar reference system combines an attitude determination system (ADS) with a laser reference system (LRS) to meet this requirement. The SRS approach and expected performance are described in this paper.

  20. Run-Time Library Routines Reference

    E-Print Network [OSTI]

    California at San Diego, University of

    MDS Run-Time Library Routines Reference Manual February 1993 Software Version: MDS 5.2 VAX.S.A. The following are trademarks of Digitial Equipment Corporation: CDD DECnet VAX DATATRIEVE DECUS VAXcluster DEC MicroVAX VAX Information Architecture DEC/CMS MicroVMS VMS DEC/MMS Rdb/VMS VT IDL (Interactive Data

  1. R Reference Manual: A gentle overview

    E-Print Network [OSTI]

    Priestley, Jennifer Lewis

    , yet similar to SAS, R is a commands-driven programming environment to execute statistical analysisR Reference Manual: A gentle overview #12;2 Developed and maintained by the Center for Statistics statistical computing packages ­ Excel, SPSS, Minitab, R and SAS. 1 Readers of this manual are assumed to have

  2. SENATE COMMITTEE ON AWARDS TERMS OF REFERENCE

    E-Print Network [OSTI]

    Victoria, University of

    SENATE COMMITTEE ON AWARDS TERMS OF REFERENCE The committee shall: 1. Approve and recommend to Senate new or revised undergraduate and graduate student awards and the terms and conditions for those awards; 2. Consider and approve the student recipients nominated or recommended for undergraduate awards

  3. Xyce parallel electronic simulator : reference guide.

    SciTech Connect (OSTI)

    Mei, Ting; Rankin, Eric Lamont; Thornquist, Heidi K.; Santarelli, Keith R.; Fixel, Deborah A.; Coffey, Todd Stirling; Russo, Thomas V.; Schiek, Richard Louis; Warrender, Christina E.; Keiter, Eric Richard; Pawlowski, Roger Patrick

    2011-05-01T23:59:59.000Z

    This document is a reference guide to the Xyce Parallel Electronic Simulator, and is a companion document to the Xyce Users Guide. The focus of this document is (to the extent possible) exhaustively list device parameters, solver options, parser options, and other usage details of Xyce. This document is not intended to be a tutorial. Users who are new to circuit simulation are better served by the Xyce Users Guide. The Xyce Parallel Electronic Simulator has been written to support, in a rigorous manner, the simulation needs of the Sandia National Laboratories electrical designers. It is targeted specifically to run on large-scale parallel computing platforms but also runs well on a variety of architectures including single processor workstations. It also aims to support a variety of devices and models specific to Sandia needs. This document is intended to complement the Xyce Users Guide. It contains comprehensive, detailed information about a number of topics pertinent to the usage of Xyce. Included in this document is a netlist reference for the input-file commands and elements supported within Xyce; a command line reference, which describes the available command line arguments for Xyce; and quick-references for users of other circuit codes, such as Orcad's PSpice and Sandia's ChileSPICE.

  4. Reference number ISO 8601:2004(E)

    E-Print Network [OSTI]

    Wu, Shiliang

    Reference number ISO 8601:2004(E) © ISO 2004 INTERNATIONAL STANDARD ISO 8601 Third edition 2004'heure #12;ISO 8601:2004(E) PDF disclaimer This PDF file may contain embedded typefaces. In accordance. The ISO Central Secretariat accepts no liability in this area. Adobe is a trademark of Adobe Systems

  5. Documents and Briefcase Zimbra Quick Reference Card

    E-Print Network [OSTI]

    Portman, Douglas

    Documents and Briefcase Zimbra Quick Reference Card Documents ­ Workspace (http://z.rochester.edu) Documents Shortcuts Edit Refresh Show Shortcuts + Cancel Save + Go the `Shortcuts' tab on the left. Basic Briefcase Tasks What is Briefcase? It is a tool for managing files from

  6. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Suslov, A. V. [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Mironov, O. A. [Warwick SEMINANO R and D Center, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Känel, H. von [Laboratorium für Festkörperphysik ETH Zürich, CH-8093 Zürich (Switzerland)

    2014-08-20T23:59:59.000Z

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|?4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  7. FORM FOR ESPC CASE STUDIES AND REFERENCES | Department of Energy

    Office of Environmental Management (EM)

    FORM FOR ESPC CASE STUDIES AND REFERENCES FORM FOR ESPC CASE STUDIES AND REFERENCES Document features a template, sample, and instructions to help Federal agencies develop case...

  8. asce standardized reference: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lux (of 26 INSTALLATION AND UNCERTAINTY EVALUATION OF REFERENCE HARDNESS STANDARD OF CROATIA CiteSeer Summary: Abstract ? Reference hardness standard with HV1 HV50 measuring...

  9. analytical reference standards: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lux (of 27 INSTALLATION AND UNCERTAINTY EVALUATION OF REFERENCE HARDNESS STANDARD OF CROATIA CiteSeer Summary: Abstract ? Reference hardness standard with HV1 HV50 measuring...

  10. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Reference Buildings by Climate Zone and Representative City: 4B Albuquerque, New Mexico Reference Buildings by Climate Zone and Representative City: 4B Albuquerque, New...

  11. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 5B Boulder, Colorado Reference Buildings by Climate Zone and Representative...

  12. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 4C Seattle, Washington Reference Buildings by Climate Zone and Representative...

  13. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 6B Helena, Montana Reference Buildings by Climate Zone and Representative...

  14. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 8 Fairbanks, Alaska Reference Buildings by Climate Zone and Representative...

  15. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 5A Chicago, Illinois Reference Buildings by Climate Zone and Representative...

  16. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 3B Las Vegas, Nevada Reference Buildings by Climate Zone and Representative...

  17. Reference Buildings by Climate Zone and Representative City:...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    More Documents & Publications Reference Buildings by Climate Zone and Representative City: 4A Baltimore, Maryland Reference Buildings by Climate Zone and Representative...

  18. Reference Buildings by Climate Zone and Representative City:...

    Broader source: Energy.gov (indexed) [DOE]

    akfairbankspre1980v1-47-2.zip More Documents & Publications Reference Buildings by Climate Zone and Representative City: 8 Fairbanks, Alaska Reference Buildings by Climate Zone...

  19. Reference Buildings by Climate Zone and Representative City:...

    Broader source: Energy.gov (indexed) [DOE]

    minneapolispre1980v1-47-2.zip More Documents & Publications Reference Buildings by Climate Zone and Representative City: 6A Minneapolis, Minnesota Reference Buildings by...

  20. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  1. Co silicide formation on SiGeC/Si and SiGe/Si layers R. A. Donatona)

    E-Print Network [OSTI]

    on the total strain energy in the layer and restricts the applications where high Ge concentrations are needed spectrometry, secondary ion mass spectroscopy SIMS , and four point probe for sheet resistance measure- ments

  2. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  3. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  4. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  5. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  6. C-band side-entry Ge quantum-well electroabsorption modulator on SOI

    E-Print Network [OSTI]

    Miller, David A. B.

    C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing J. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown the totally internally reflecting air-SiGe interface and a frustrated total internal reflection from

  7. University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS

    E-Print Network [OSTI]

    © University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE and characterization of SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature

  8. Strain Relaxation of SiGe on Compliant BPSG and Its Applications

    E-Print Network [OSTI]

    Strain Relaxation of SiGe on Compliant BPSG and Its Applications Haizhou Yin A DISSERTATION of SiGe on compliant borophosphosilicate glass (BPSG). Through modeling and experiments it has been shown that strain relaxation in the SiGe film can be induced by lateral expansion and buckling of the SiGe

  9. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department cells, all employing high- quality a-SiGe cells, are reviewed in this paper. Incorporating various improvements in device fabrication, the UT group fabricated 1) triple-junction a-Si/a-SiGe/a- SiGe solar cells

  10. SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,*

    E-Print Network [OSTI]

    Papavassiliou, Christos

    SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,* , S Abstract Silicon­germanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS

  11. SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI): Two Structures for CMOS Application Zhiyuan Cheng,a) Jongwan Jung, b Massachusetts Avenue, Cambridge, MA 02141 a) E-mail: cheng@alum.MIT.EDU Abstract ­ Two SiGe-on-insulator (SGOI enhancement on both electron and hole mobilities. Keywords ­ strained-Si, SiGe, SiGe-on-Insulator, SGOI

  12. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30T23:59:59.000Z

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  13. Background p(450 GeV/c)-p,d (NA51)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    #12;#12;Background ' Open charm J / Drell-Yan #12;* p(450 GeV/c)-p,d (NA51) 208 16 p(200 Ge) 32 p(450 GeV/c)-A (A=C,Al,Cu,W) (NA38) 10101 10101010 652 3 4 B targetprojectile B(J/)/(AB)(nb) 5 4 3 Pb(208x158 GeV/c)-Pb (NA50) S(32x200 GeV/c)-U (NA38) p(200 GeV/c)-W (NA38) p(450 GeV/c)-A (A=p,d) (NA

  14. Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering

    SciTech Connect (OSTI)

    Heng, C. L.; Chelomentsev, E.; Peng, Z. L.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada); Simpson, P. J. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

    2009-01-01T23:59:59.000Z

    We have investigated the nature of violet-blue emission from (Ge, Er) codoped Si oxides (Ge+Er+SiO{sub 2}) using photoluminescence (PL) and positron annihilation spectroscopy (PAS) measurements. The PL spectra and PAS analysis for a control Ge-doped SiO{sub 2} (Ge+SiO{sub 2}) indicate that Ge-associated neutral oxygen vacancies (Ge-NOV) are likely responsible for the major emission in the violet-blue band. For Ge+Er+SiO{sub 2}, both Ge-NOV and GeO color centers are believed to be responsible for the emission band. The addition of Er has a significant influence on the emission, which is discussed in terms of Er-concentration-related structural change in the Ge+Er+SiO{sub 2}.

  15. Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2 G. Klimeck,1,2 and L. P subband.4 Recently, calculations predicted that valley splitting in nar- row few nanometers SiGe/Si/SiGe that prediction, which has been explained12 by the disorders of the Si/SiGe interface and in the SiGe buffer

  16. Reference Inside KS1992 Tray Inside Air

    E-Print Network [OSTI]

    Llope, William J.

    Reference Inside KS1992 0.2 Tray Inside Air 0.5 Tray Inside Air 0.8 Tray Inside Air 0.2 Tray Side Wall Inner 0.2 Tray Side Wall Inner Under TAMP near sensor pos4 Under TAMP near sensor pos4 Air Gap Below TDIG pos1 Air Gap Below TDIG pos4 Air Gap Below TDIG pos6 HPTDC1 Chip pos6 HPTDC4 Chip pos6 HPTDC2

  17. Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

    E-Print Network [OSTI]

    , and SiGe virtual substrate V. K. Yang, S. M. Ting, M. E. Groenert, M. T. Bulsara, M. T. Currie, C. W efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures metalorganic vapor deposition system. The substrates used include GaAs, Si, Ge, and SiGe virtual substrates

  18. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  19. Jefferson Lab 12 GeV CEBAF Upgrade

    SciTech Connect (OSTI)

    Claus Rode

    2010-04-01T23:59:59.000Z

    The existing continuous electron beam accelerator facility (CEBAF) at Thomas Jefferson National Accelerator Facility (TJNAF) is a 5-pass, recirculating cw electron Linac operating at ~6 GeV and is devoted to basic research in nuclear physics. The 12 GeV CEBAF Upgrade is a $310 M project, sponsored by the Department of Energy (DOE) Office of Nuclear Physics, that will expand its research capabilities substantially by doubling the maximum energy and adding major new experimental apparatus. The project received construction approval in September 2008 and has started the major procurement process. The cryogenic aspects of the 12 GeV CEBAF Upgrade includes: doubling the accelerating voltages of the Linacs by adding ten new high-performance, superconducting radiofrequency (SRF) cryomodules (CMs) to the existing 42 1/4 cryomodules; doubling of the 2 K cryogenics plant; and the addition of eight superconducting magnets.

  20. S5 0716+714 : GeV variability study

    E-Print Network [OSTI]

    Rani, B; Lott, B; Fuhrmann, L; Zensus, J A

    2013-01-01T23:59:59.000Z

    The GeV observations by Fermi-LAT give us the opportunity to characterize the high-energy emission (100 MeV - 300 GeV) variability properties of the BL Lac object S5 0716+714. In this study, we performed flux and spectral analysis of more than 3 year long (August 2008 to April 2012) Fermi-LAT data of the source. During this period, the source exhibits two different modes of flux variability with characteristic timescales of ~75 and ~140 days, respectively. We also notice that the flux variations are characterized by a weak spectral hardening. The GeV spectrum of the source shows a clear deviation from a simple power law, and is better explained by a broken power law. Similar to other bright Fermi blazars, the break energy does not vary with the source flux during the different activity states. We discuss several possible scenarios to explain the observed spectral break.

  1. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J. [University of Connecticut, JLAB

    2015-01-01T23:59:59.000Z

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  2. Spin Structure with JLab 6 and 12 GeV

    SciTech Connect (OSTI)

    Jian-Ping Chen

    2012-02-01T23:59:59.000Z

    Highlights of JLab 6 GeV results on spin structure study and plan for 12 GeV program. Spin structure study is full of surprises and puzzles. A decade of experiments from JLab yield these exciting results: (1) valence spin structure; (2) precision measurements of g{sub 2}/d{sub 2} - high-twist; (3) spin sum rules and polarizabilities; and (4) first neutron transversity. There is a bright future as the 12 GeV Upgrade will greatly enhance our capability: (1) Precision determination of the valence quark spin structure flavor separation; (2) Precision measurements of g{sub 2}/d{sub 2}; and (3) Precision extraction of transversity/tensor charge.

  3. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01T23:59:59.000Z

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  4. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28T23:59:59.000Z

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  5. Modcomp MAX IV System Processors reference guide

    SciTech Connect (OSTI)

    Cummings, J.

    1990-10-01T23:59:59.000Z

    A user almost always faces a big problem when having to learn to use a new computer system. The information necessary to use the system is often scattered throughout many different manuals. The user also faces the problem of extracting the information really needed from each manual. Very few computer vendors supply a single Users Guide or even a manual to help the new user locate the necessary manuals. Modcomp is no exception to this, Modcomp MAX IV requires that the user be familiar with the system file usage which adds to the problem. At General Atomics there is an ever increasing need for new users to learn how to use the Modcomp computers. This paper was written to provide a condensed Users Reference Guide'' for Modcomp computer users. This manual should be of value not only to new users but any users that are not Modcomp computer systems experts. This Users Reference Guide'' is intended to provided the basic information for the use of the various Modcomp System Processors necessary to, create, compile, link-edit, and catalog a program. Only the information necessary to provide the user with a basic understanding of the Systems Processors is included. This document provides enough information for the majority of programmers to use the Modcomp computers without having to refer to any other manuals. A lot of emphasis has been placed on the file description and usage for each of the System Processors. This allows the user to understand how Modcomp MAX IV does things rather than just learning the system commands.

  6. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Ali, Dyan; Richardson, Christopher J. K. [Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)

    2012-11-15T23:59:59.000Z

    The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

  7. Department of Energy Construction Safety Reference Guide

    SciTech Connect (OSTI)

    Not Available

    1993-09-01T23:59:59.000Z

    DOE has adopted the Occupational Safety and Health Administration (OSHA) regulations Title 29 Code of Federal Regulations (CFR) 1926 ``Safety and Health Regulations for Construction,`` and related parts of 29 CFR 1910, ``Occupational Safety and Health Standards.`` This nonmandatory reference guide is based on these OSHA regulations and, where appropriate, incorporates additional standards, codes, directives, and work practices that are recognized and accepted by DOE and the construction industry. It covers excavation, scaffolding, electricity, fire, signs/barricades, cranes/hoists/conveyors, hand and power tools, concrete/masonry, stairways/ladders, welding/cutting, motor vehicles/mechanical equipment, demolition, materials, blasting, steel erection, etc.

  8. 1993 Solid Waste Reference Forecast Summary

    SciTech Connect (OSTI)

    Valero, O.J.; Blackburn, C.L. [Westinghouse Hanford Co., Richland, WA (United States); Kaae, P.S.; Armacost, L.L.; Garrett, S.M.K. [Pacific Northwest Lab., Richland, WA (United States)

    1993-08-01T23:59:59.000Z

    This report, which updates WHC-EP-0567, 1992 Solid Waste Reference Forecast Summary, (WHC 1992) forecasts the volumes of solid wastes to be generated or received at the US Department of Energy Hanford Site during the 30-year period from FY 1993 through FY 2022. The data used in this document were collected from Westinghouse Hanford Company forecasts as well as from surveys of waste generators at other US Department of Energy sites who are now shipping or plan to ship solid wastes to the Hanford Site for disposal. These wastes include low-level and low-level mixed waste, transuranic and transuranic mixed waste, and nonradioactive hazardous waste.

  9. AVIATION MANAGER QUALIFICATION STANDARD REFERENCE GUIDE

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartmentDepartment of2 of 5) ALARAManager Qualification Standard Reference

  10. References - DOE Directives, Delegations, and Requirements

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch > TheNuclear Press Releases 2014References by Website Administrator This

  11. Sandia Energy - Marine Hydrokinetics Technology: Reference Model

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Scienceand RequirementsCoatingsUltra-High-VoltagePowerUpdatesDevelopment Reference Model

  12. 2014 Manufacturing Energy and Carbon Footprints: References

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of BadTHEEnergy VehicleSessionOffice |OfficeAboutofAugustReferences

  13. Template:Reference | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnualProperty Edit with formSoutheastern ILSunseekerTallahatchieTecniplanReference Jump to:

  14. Commercial Reference Buildings | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are beingZealand JumpConceptual Model, clickInformationNew York:Governor s(RedirectedColusaCommack,Reference

  15. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ÀyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  16. EBIC characterization of strained Si/SiGe heterostructures

    SciTech Connect (OSTI)

    Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)], E-mail: yakimov@ipmt-hpm.ac.ru; Zhang, R. H.; Rozgonyi, G. A. [North Carolina State University, Department of Materials Science and Engineering (United States); Seacrist, M. [MEMC Electronic Materials (United States)

    2007-04-15T23:59:59.000Z

    Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800 deg. C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E{sub b}. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.

  17. Reference Radiation for Cosmic Rays in RBE Research 

    E-Print Network [OSTI]

    Feng, Shaoyong

    2011-10-21T23:59:59.000Z

    When astronauts travel in space, they are exposed to high energy cosmic radiations. The cosmic ray spectrum contains very high energy particles, generally up to several GeV per nucleon. Currently NASA is funding research on the effects...

  18. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07T23:59:59.000Z

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  19. Reference worldwide model for antineutrinos from reactors

    E-Print Network [OSTI]

    Marica Baldoncini; Ivan Callegari; Giovanni Fiorentini; Fabio Mantovani; Barbara Ricci; Virginia Strati; Gerti Xhixha

    2015-02-16T23:59:59.000Z

    Antineutrinos produced at nuclear reactors constitute a severe source of background for the detection of geoneutrinos, which bring to the Earth's surface information about natural radioactivity in the whole planet. In this framework we provide a reference worldwide model for antineutrinos from reactors, in view of reactors operational records yearly published by the International Atomic Energy Agency (IAEA). We evaluate the expected signal from commercial reactors for ongoing (KamLAND and Borexino), planned (SNO+) and proposed (Juno, RENO-50, LENA and Hanohano) experimental sites. Uncertainties related to reactor antineutrino production, propagation and detection processes are estimated using a Monte Carlo based approach, which provides an overall site dependent uncertainty on the signal in the geoneutrino energy window on the order of 3%. We also implement the off-equilibrium correction to the reference reactor spectra associated with the long-lived isotopes and we estimate a 2.4% increase of the unoscillated event rate in the geoneutrino energy window due to the storage of spent nuclear fuels in the cooling pools. We predict that the research reactors contribute to less than 0.2% to the commercial reactor signal in the investigated 14 sites. We perform a multitemporal analysis of the expected reactor signal over a time lapse of 10 years using reactor operational records collected in a comprehensive database published at www.fe.infn.it/antineutrino.

  20. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  1. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  2. Generic Argillite/Shale Disposal Reference Case

    SciTech Connect (OSTI)

    Zheng, Liange; Colon, Carlos Jové; Bianchi, Marco; Birkholzer, Jens

    2014-08-08T23:59:59.000Z

    Radioactive waste disposal in a deep subsurface repository hosted in clay/shale/argillite is a subject of widespread interest given the desirable isolation properties, geochemically reduced conditions, and widespread geologic occurrence of this rock type (Hansen 2010; Bianchi et al. 2013). Bianchi et al. (2013) provides a description of diffusion in a clay-hosted repository based on single-phase flow and full saturation using parametric data from documented studies in Europe (e.g., ANDRA 2005). The predominance of diffusive transport and sorption phenomena in this clay media are key attributes to impede radionuclide mobility making clay rock formations target sites for disposal of high-level radioactive waste. The reports by Hansen et al. (2010) and those from numerous studies in clay-hosted underground research laboratories (URLs) in Belgium, France and Switzerland outline the extensive scientific knowledge obtained to assess long-term clay/shale/argillite repository isolation performance of nuclear waste. In the past several years under the UFDC, various kinds of models have been developed for argillite repository to demonstrate the model capability, understand the spatial and temporal alteration of the repository, and evaluate different scenarios. These models include the coupled Thermal-Hydrological-Mechanical (THM) and Thermal-Hydrological-Mechanical-Chemical (THMC) models (e.g. Liu et al. 2013; Rutqvist et al. 2014a, Zheng et al. 2014a) that focus on THMC processes in the Engineered Barrier System (EBS) bentonite and argillite host hock, the large scale hydrogeologic model (Bianchi et al. 2014) that investigates the hydraulic connection between an emplacement drift and surrounding hydrogeological units, and Disposal Systems Evaluation Framework (DSEF) models (Greenberg et al. 2013) that evaluate thermal evolution in the host rock approximated as a thermal conduction process to facilitate the analysis of design options. However, the assumptions and the properties (parameters) used in these models are different, which not only make inter-model comparisons difficult, but also compromise the applicability of the lessons learned from one model to another model. The establishment of a reference case would therefore be helpful to set up a baseline for model development. A generic salt repository reference case was developed in Freeze et al. (2013) and the generic argillite repository reference case is presented in this report. The definition of a reference case requires the characterization of the waste inventory, waste form, waste package, repository layout, EBS backfill, host rock, and biosphere. This report mainly documents the processes in EBS bentonite and host rock that are potentially important for performance assessment and properties that are needed to describe these processes, with brief description other components such as waste inventory, waste form, waste package, repository layout, aquifer, and biosphere. A thorough description of the generic argillite repository reference case will be given in Jové Colon et al. (2014).

  3. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

    SciTech Connect (OSTI)

    Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2013-11-15T23:59:59.000Z

    The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

  4. Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers

    SciTech Connect (OSTI)

    Valakh, M. Ya.; Lytvyn, P. M.; Nikolenko, A. S.; Strelchuk, V. V. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv (Ukraine); Krasilnik, Z. F.; Lobanov, D. N.; Novikov, A. V. [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation)

    2010-04-05T23:59:59.000Z

    Raman spectroscopy and atomic-force microscopy were applied to study the morphology of nanoislands grown on strained Si{sub 1-x}Ge{sub x} sublayers. It was shown that the growth of nanoislands on strained Si{sub 1-x}Ge{sub x} sublayer not only induces the effect of their spatial ordering but also enhances the role of interdiffusion processes. Unusual high island volume increase during the epitaxy is explained by anomalous strong material diffusion from the sublayer into the islands, induced by nonuniform field of elastic strains.

  5. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28T23:59:59.000Z

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  6. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01T23:59:59.000Z

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  7. Nucleon Form Factors experiments with 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wojtsekhowski, Bogdan

    2008-11-01T23:59:59.000Z

    A number of precision form factor experiments at high momentum transfer will be performed with the 11 GeV electron beam of CEBAF. We review the approved proposals and the conceptual schemes of several new suggestions. Form factor data will serve as a major input for the construction of a tomographic image of the nucleon.

  8. GeV C. W. electron microtron design report

    SciTech Connect (OSTI)

    Not Available

    1982-05-01T23:59:59.000Z

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 ..mu..amps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries.

  9. Structural Changes in Vitreous GeSe4 under Pressure

    SciTech Connect (OSTI)

    Skinner L. B.; Parise J.; Benmore, C.J,; Antao, S.; Soignard, E.; Amin, S.A.; Bychkov, E.; Rissi, E. and Yarger, J.L.

    2011-11-21T23:59:59.000Z

    High-energy X-ray diffraction experiments have been performed on GeSe{sub 4} glass up to pressures of 8.6 GPa, and the equation of state has been measured up to 10 GPa. The X-ray structure factors reveal a decrease in the first sharp diffraction peak intensity and broadening with pressure, which signifies a break-up of the intermediate range order in the glass. In contrast, the principal peak in the structure factor shows an increase in intensity and a sharpening with pressure, which is attributed to an increase in extended range order and coherence of the compacted units. The average nearest neighbor coordination number is found to remain constant in GeSe{sub 4} glass (within experimental error) over the pressure range measured. This is in contrast with the gradual increase found in GeSe{sub 2} glass. Rather, in GeSe{sub 4} glass the densification mechanism is shown to be associated with large inward shifts of the second neighbor and higher coordination shells. These features appear as additional correlations at 3.3 and 5.3 {angstrom} in the differences taken between adjacent pair distribution functions with increasing pressure.

  10. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H. [JLAB

    2013-12-01T23:59:59.000Z

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  11. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01T23:59:59.000Z

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  12. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics Participants Project Sponsors: DOE Building America Program/Bonneville Power Administration Contractor: PNNL

  13. Event-by-event hexb pt hexb fluctuations in Au-Au collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Adler, C.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Anderson, M; Arkhipkin, D.; Averichev, G.S.; Badyal,S.K.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele,S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bhardwaj,S.; Bhaskar, P.; Bhati, A.K.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar,A.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez,M.; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Chernenko, S.P.; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Majumdar, M.R.; Eckardt, V.; Efimov,L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, K.J.; Fu, J.; Gagliardi, C.A.; Ganti, M.S.; Gutierrez, T.D.; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grigoriev, V.; Cronstal, S.; Grosnick, D.; Guedon, M.; Guertin, S.M.; Gupta, A.; Gushin, E.; Hallman, T.J.; Hardtke, D.; Harris,J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Horsley, M.; Huang, H.Z.; Huang,S.L.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Johnson, I.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Konstantinov, A.S.; Kopytine,S.M.; Kotchenda, L.; Kovalenko, A.D.; Kramer, M.; Kravtsov, P.; Krueger,K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; et al.

    2003-09-02T23:59:59.000Z

    We present the first large-acceptance measurement of event-wise fluctuations in Au-Au collisions at {radical}s{sub NN} = 130 GeV. Significant nonstatistical fluctuations are observed. The measured fractional r.m.s. width excess of the event-wise distribution for the 15% most-central events for charged hadrons within |{eta}| < 1 and 0.15 {le} p{sub t} {le} 2 GeV/c is 13.7 {+-} 0.1(stat) {+-}1.3(syst)% relative to a statistical reference. The variation of charge-independent fluctuation excess with centrality is non-monotonic but smooth. Charge-dependent nonstatistical fluctuations are also observed.

  14. Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

    E-Print Network [OSTI]

    Teherani, James T.

    Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical ...

  15. WECC Variable Generation Planning Reference Book

    SciTech Connect (OSTI)

    Makarov, Yuri V.; Du, Pengwei; Etingov, Pavel V.; Ma, Jian; Vyakaranam, Bharat

    2013-05-14T23:59:59.000Z

    This planning reference book is a document reflecting a Western Electricity Coordination Council (WECC) effort to put together multiple sources of information and provide a clear, systemic, comprehensive outline of the problems, both existing and anticipated; their impacts on the system; currently used and proposed solutions by the industry and research community; planning practices; new technologies, equipment, and standards; and expected future trends. This living (periodically updated) document could help WECC and other practicing engineers, especially the younger generation of engineers joining the workforce, to get familiar with a large variety of information related to the integration of variable resources into the WECC system, bypassing in part the need for time-consuming information gathering and learning processes from more experienced engineers or from the literature.

  16. Semantic Features for Classifying Referring Search Terms

    SciTech Connect (OSTI)

    May, Chandler J.; Henry, Michael J.; McGrath, Liam R.; Bell, Eric B.; Marshall, Eric J.; Gregory, Michelle L.

    2012-05-11T23:59:59.000Z

    When an internet user clicks on a result in a search engine, a request is submitted to the destination web server that includes a referrer field containing the search terms given by the user. Using this information, website owners can analyze the search terms leading to their websites to better understand their visitors needs. This work explores some of the features that can be used for classification-based analysis of such referring search terms. We present initial results for the example task of classifying HTTP requests countries of origin. A system that can accurately predict the country of origin from query text may be a valuable complement to IP lookup methods which are susceptible to the obfuscation of dereferrers or proxies. We suggest that the addition of semantic features improves classifier performance in this example application. We begin by looking at related work and presenting our approach. After describing initial experiments and results, we discuss paths forward for this work.

  17. ACAA fly ash basics: quick reference card

    SciTech Connect (OSTI)

    NONE

    2006-07-01T23:59:59.000Z

    Fly ash is a fine powdery material created when coal is burned to generate electricity. Before escaping into the environment via the utility stacks, the ash is collected and may be stored for beneficial uses or disposed of, if necessary. The use of fly ash provides environmental benefits, such as the conservation of natural resources, the reduction of greenhouse gas emissions and eliminating the needed for ash disposal in landfills. It is also a valuable mineral resource that is used in construction and manufacturing. Fly ash is used in the production of Portland cement, concrete, mortars and stuccos, manufactured aggregates along with various agricultural applications. As mineral filler, fly ash can be used for paints, shingles, carpet backing, plastics, metal castings and other purposes. This quick reference card is intended to provide the reader basic source, identification and composition, information specifically related to fly ash.

  18. Reference-frame-independent quantum key distribution

    SciTech Connect (OSTI)

    Laing, Anthony; Rarity, John G.; O'Brien, Jeremy L. [Centre for Quantum Photonics, H. H. Wills Physics Laboratory and Department of Electrical and Electronic Engineering, University of Bristol, BS8 1UB (United Kingdom); Scarani, Valerio [Centre for Quantum Technologies and Department of Physics, National University of Singapore (Singapore)

    2010-07-15T23:59:59.000Z

    We describe a quantum key distribution protocol based on pairs of entangled qubits that generates a secure key between two partners in an environment of unknown and slowly varying reference frame. A direction of particle delivery is required, but the phases between the computational basis states need not be known or fixed. The protocol can simplify the operation of existing setups and has immediate applications to emerging scenarios such as earth-to-satellite links and the use of integrated photonic waveguides. We compute the asymptotic secret key rate for a two-qubit source, which coincides with the rate of the six-state protocol for white noise. We give the generalization of the protocol to higher-dimensional systems and detail a scheme for physical implementation in the three-dimensional qutrit case.

  19. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07T23:59:59.000Z

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  20. Credit and Trade References President and Fellows of Harvard College

    E-Print Network [OSTI]

    Credit and Trade References President and Fellows of Harvard College 1033 Massachusetts Avenue, 2nd;Trade References VWR International Risk Department Contact: Brian Newton TEL: 770-792-1271 FAX: 484

  1. SPD SEIS References for Appendix F | National Nuclear Security...

    National Nuclear Security Administration (NNSA)

    SPD SEIS References for Appendix F SPD SEIS References for Appendix F Blunt, B., 2010, Savannah River Site, Aiken, South Carolina, personal communication (email) to J. DiMarzio,...

  2. "No two directions are ever the same": Transforming reference services

    E-Print Network [OSTI]

    Stratton, John M.; Devlin, Frances A.

    2008-07-29T23:59:59.000Z

    This poster provides information about the changes that have occurred in reference services at the University of Kansas (KU) Libraries since 2002. Our intent is to illustrate the evolution of thinking about reference ...

  3. It's Complicated!: The Continuing Evolution of the Reference Service Model

    E-Print Network [OSTI]

    Devlin, Frances A.; Ellis, Erin L.

    2010-08-06T23:59:59.000Z

    Digital resources and technologies have brought new dimensions to librarianship and traditional reference services. At the University of Kansas (KU) Libraries, reference services have been evolving and reconfigured several ...

  4. One in five online scholarly articles affected by 'reference...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on reference rot, the combination of link rot and content drift to which references to web resources included in STM articles are subject. January 26, 2015 From left, Los Alamos...

  5. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26T23:59:59.000Z

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  6. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  7. Adsorption of alkali metals on Ge(001)(2×1) surface. |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    alkali metals on Ge(001)(2×1) surface. Adsorption of alkali metals on Ge(001)(2×1) surface. Abstract: Ab initio total energy calculations have been performed for Na, K...

  8. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  9. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  10. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd...

  11. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    group-IV-based dilute magnetic semiconductors by electronicMn x Ge 1-x dilute magnetic semiconductor”, Applied Physicsamorphous Ge 1-x Mn x magnetic semiconductor films”, Journal

  12. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  13. 6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YCAVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV...

  14. $J/?$, $?(2S)$ Production in pp Collisions at E=510 GeV

    E-Print Network [OSTI]

    Leonard S. Kisslinger; Debasish Das

    2014-10-06T23:59:59.000Z

    This brief report is an extension of studies of $J/\\Psi,\\Psi(2S)$ production in pp collisions at the BNL with E=$\\sqrt{s}$=200 GeV to E=510 GeV at PHENIX.

  15. Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group

    E-Print Network [OSTI]

    Saffman, Mark

    Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group Department in the area of Si/SiGe quantum dots and quantum computing. Recent advances in our group include single

  16. Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

    SciTech Connect (OSTI)

    Kanno, Hiroshi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

    2006-10-30T23:59:59.000Z

    Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO{sub 2} has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 deg. C). High temperature annealing (>500 deg. C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 deg. C). As a result, large poly-SiGe regions (>20 {mu}m) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%)

  17. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01T23:59:59.000Z

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  18. Electron Backscatter Diffraction of a Ge Growth Tip from a Vertical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of a Ge Growth Tip from a Vertical Gradient Freeze Furnace. Electron Backscatter Diffraction of a Ge Growth Tip from a Vertical Gradient Freeze Furnace. Abstract: The growth-tip...

  19. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01T23:59:59.000Z

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  20. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    E-Print Network [OSTI]

    Pan, Hsuan-yu

    2010-01-01T23:59:59.000Z

    1.1 SiGe BiCMOS Technology . . . . . . .A Linear-in-dB SiGe HBT Wideband High Dynamic Range RFpower dissapation trade-off between Si BJTs and SiGe HBTs [

  1. On the Intrinsic Locality Properties of Web Reference Streams

    E-Print Network [OSTI]

    Keinan, Alon

    On the Intrinsic Locality Properties of Web Reference Streams Rodrigo Fonseca Virg´ilio Almeida in the study of Web reference streams: sequences of requests for Web objects. In particular, many studies have into the nature of reference stream transformations in the Web. I. INTRODUCTION Considerable effort has gone

  2. Generating and Interpreting Referring Expressions in Dustin Arthur Smith

    E-Print Network [OSTI]

    Referring Expressions in Context by Dustin Arthur Smith Submitted to the Program of Media Arts and Sciences, MIT Media Lab #12;Generating and Interpreting Referring Expressions in Context by Dustin Arthur SmithGenerating and Interpreting Referring Expressions in Context by Dustin Arthur Smith B.S., Wake

  3. Model Reference Adaptive Control Framework for Real Time Traffic

    E-Print Network [OSTI]

    Minnesota, University of

    Adaptive Control #12;12 Prescriptive Dynamic Traffic Assignment A Prediction Model and the Reference ModelModel Reference Adaptive Control Framework for Real Time Traffic Management Under Emergency Movement Volume Adaptive Controller Model Reference Adaptive Control (MRAC) Assumptions Super Zone Concept

  4. RECENT REFERENCES: APRIL 1, 2005 TO JUNE 30, 2005

    SciTech Connect (OSTI)

    WINCHELL, D.F.

    2005-06-30T23:59:59.000Z

    This document lists experimental references added to Nuclear Science References (NSR) during the period April 1, 2005 to June 30, 2005. The first section lists keynumbers and keywords sorted by mass and nuclide. The second section lists all references, ordered by keynumber.

  5. RECENT REFERENCES: JANUARY 1, 2005 TO DECEMBER 31, 2005

    SciTech Connect (OSTI)

    WINCHELL, D.F.

    2005-12-31T23:59:59.000Z

    This document lists experimental references added to Nuclear Science References (NSR) during the period January 1, 2005 to December 31, 2005. The first section lists keynumbers and keywords sorted by mass and nuclide. The second section lists all references, ordered by keynumber.

  6. RECENT REFERENCES: OCTOBER 1, 2005 TO DECEMBER 31, 2005

    SciTech Connect (OSTI)

    WINCHELL, D.F.

    2005-12-31T23:59:59.000Z

    This document lists experimental references added to Nuclear Science References (NSR) during the period October 1, 2005 to December 31, 2005. The first section lists keynumbers and keywords sorted by mass and nuclide. The second section lists all references, ordered by keynumber.

  7. 54 | P a g e Terms of Reference

    E-Print Network [OSTI]

    Brownstone, Rob

    in campus sustainability by: o Working together to reduce the amount of water, energy and products we use 54 | P a g e Terms of Reference DALHOUSIE UNIVERSITY OFFICE OF SUSTAINABILITY Rethink: Sustainability on Campus SUSTAINABILITY TEAMS Terms of Reference 1.0 Introduction These terms of reference

  8. Using Enterprise Reference Models for Automated ISO 9000 Compliance Evaluation

    E-Print Network [OSTI]

    Fox, Mark S.

    1 Using Enterprise Reference Models for Automated ISO 9000 Compliance Evaluation Henry M. Kim1, and then compared to a reference model of "good" processes and structures, such as the ISO 9000 standards. In this paper, the TOVE ISO 9000 Micro-Theory is presented as a formal reference model of quality goodness. ISO

  9. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Risø-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30° unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  10. Directional correlation of [gamma] transitions in [sup 72]Ge following the decay of [sup 72]Ga

    SciTech Connect (OSTI)

    Landulfo, E.; Saxena, R.N.; Zamboni, C.B.; Lapolli, A.L. (Instituto de Pesquisas Energeticas e Nucleares, IPEN-Comissao Nacional de Energia Nuclear de Brasil, Sao Paulo, Sao Paulo (Brazil))

    1994-08-01T23:59:59.000Z

    Directional correlations of coincident gamma transitions in [sup 72]Ge have been measured following the [beta][sup [minus

  11. MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS , J. Liang1

    E-Print Network [OSTI]

    Suo, Zhigang

    MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS R. Huang1 , H. Yin2 , J. Liang1 , J.C. Sturm2, a SiGe thin film, a glass layer, and a Si wafer. The SiGe film is a perfect crystal, and is under biaxial compression. Pattern the SiGe film into islands. On annealing, the glass flows and the islands

  12. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01T23:59:59.000Z

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  13. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  14. Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on

    E-Print Network [OSTI]

    Gao, Hongjun

    Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on the Si(1 1 1)-(7 Â 7-assembled growth of submonolayer Ge on the Si(1 1 1)-(7 Â 7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition

  15. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01T23:59:59.000Z

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  16. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,§,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  17. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  18. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 · 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  19. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01T23:59:59.000Z

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, “Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, “Ge on Si p-i-n photodiodes operating

  20. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  1. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01T23:59:59.000Z

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  2. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  3. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  4. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  5. Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic Field Laboratory

    E-Print Network [OSTI]

    Weston, Ken

    Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic focused on the coexistence of superconductivity and ferromagnetism, including UGe2, URhGe, and UCoGe. In these materials, superconductivity develops below the ferromagnetic Curie temperature TC without destroying

  6. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

    E-Print Network [OSTI]

    Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates V. K. Yang, MAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model­10 Relaxed SiGe graded layers on Si have produced the highest quality GaAs on Si to date for the integration

  7. \\Development, implementation and veri cation of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Paper I \\Development, implementation and veri#12;cation of a physics-based Si/SiGe HBT model and verification of a physics­based Si/SiGe HBT model for millimeter­wave non­ linear circuit simulations. S. Bruce thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects

  8. EVOLUTION OF SELF-INTERSTITIALS INDUCED BY ION-IMPLANTATION IN SiGe ALLOYS

    E-Print Network [OSTI]

    Florida, University of

    EVOLUTION OF SELF-INTERSTITIALS INDUCED BY ION-IMPLANTATION IN SiGe ALLOYS By ROBERT T. CROSBY and Astronomy at the University of Aarhus in Denmark provided the utmost quality SiGe structures for my {311 great colleague, supervisor, and friend) grew the B-doped SiGe structures. J. Liu of Varian

  9. High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

    E-Print Network [OSTI]

    1 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Zhonghe as the gate insulator for low temperature (SiGe thin film transistors (TFTs) has been between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative

  10. Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator

    E-Print Network [OSTI]

    Huang, Zhaoran "Rena"

    Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator Volume 3, Number 5, October 2011 Tuhin Guha.1109/JPHOT.2011.2169658 1943-0655/$26.00 ©2011 IEEE #12;Design of a 250-Gbit/s SiGe HBT Electrooptic: We present a rigorous electrical and optical analysis of a highly scaled, graded- base, SiGe

  11. SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers

    E-Print Network [OSTI]

    Bowers, John

    SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers Department of Electrical 95064 *Corresponding Email: ali@soe.ucsc.edu, phone: (831) 459-3821 Abstract SiGe is one of the best selective emission of hot electrons through thermionic emission. SiGe/Si superlattice structures were grown

  12. Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a)

    E-Print Network [OSTI]

    Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a) , S. Dilhaire (a on thermal quadrupoles is presented to model the behavior of a single stage Si/SiGe micro-cooler in AC of the model with experimental reflectometry techniques is also presented. Performance of Si/SiGe micro

  13. SiGe HBT Nonlinear Phase Noise Modeling Sebastien Gribaldo, Laurent Bary and Olivier Llopis

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    SiGe HBT Nonlinear Phase Noise Modeling S´ebastien Gribaldo, Laurent Bary and Olivier Llopis LAAS model of a SiGe bipolar transistor is presented. This model includes nonlinear noise sources and is able phase noise data at different RF power level. Keywords: nonlinear noise, modelling, SiGe PACS: 85.40.Qx

  14. Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates

    E-Print Network [OSTI]

    Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates R. L on the relaxation of Si/SiGe bilayers of different geometries to obtain up to 1.0% uniaxial tensile strain in silicon and 1.5 GPa uniaxial compressive stress in SiGe [1,2]. The process generates uniform uniaxially

  15. Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

    E-Print Network [OSTI]

    Allen, Leslie H.

    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation G. L and Nomarski microscopy. In n-type modulation-doped Si-SiGe structures, the band structure is type II where SiGe layer, generally on top of the strained Si, is intentionally doped leaving the adjacent Si layer

  16. Development, implementation and verification of a physicsbased Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physics­based Si/SiGe HBT model for millimeter Abstract A physics­based large­signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  17. Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    1 Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar. The devices investigated were first, second and third-generation Silicon- Germanium (SiGe) Heterojunction-engineered SiGe technology [1] have potential advantages when compared with Complementary Metal Oxide

  18. IEEE BCTM1.3 Explorations for High Performance SiGe-HeterojunctionBipolar

    E-Print Network [OSTI]

    Technische Universiteit Delft

    IEEE BCTM1.3 Explorations for High Performance SiGe-HeterojunctionBipolar Transistor Integration P.Deixler@philips.com,Phone: -1 505 858 2960 Abstract We present a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early

  19. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice

    E-Print Network [OSTI]

    Yang, Peidong

    Letters Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires Yiying Wu, Rong-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice-crystalline nano- wires with Si/SiGe superlattice structure are obtained and thoroughly characterized using

  20. Thermionic power generation at high temperatures using SiGe/Si superlattices

    E-Print Network [OSTI]

    Thermionic power generation at high temperatures using SiGe/Si superlattices Daryoosh Vashaeea of SiGe/Si superlattices for power generation at high temperatures. A detailed theory based on Boltzmann provides only a modest improvement in the power factor. This is due to the fact that SiGe is a multivalley

  1. Plasma process-induced band-gap modifications of a strained SiGe heterostructure

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Plasma process-induced band-gap modifications of a strained SiGe heterostructure P. K. Swain,a) S the strain of coherently strained SiGe. This work investigates the change in valence-band discontinuity in plasma-exposed SiGe films due to strain relaxation by a capacitance­voltage (C­V) profiling technique

  2. IBM Systems and Technology IBM SiGe 5PAe and

    E-Print Network [OSTI]

    IBM Systems and Technology IBM SiGe 5PAe and 1KW5PAe technologies Keep pace with mobile advances SiGe offerings featuring copper pillar and through-silicon-via options Take advantage of ongoing to solutions based on gallium arsenide (GaAs) technology, for example, the IBM SiGe 5PAe family offers several

  3. SiGe integrated circuits for millimeter-wave imaging and phased arrays

    E-Print Network [OSTI]

    May, Jason W.

    2009-01-01T23:59:59.000Z

    48 Chapter 4 SiGe W-Band RFIC Components . . . 4.1 W-Bandarray beamformer in 0.18- m SiGe BiCMOS technology. Thetotal power radiometer with SiGe LNA + Detec- tor, (b)

  4. Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2

    E-Print Network [OSTI]

    Page 1 Measurementof Seebeck coefficient perpendicular to SiGe superlattice Yan Zhang1 , Gehang to measure the Seebeck coefficient of SiGe superlattice material perpendicular to the layers1 . Successful of the SiGe superlattice micro coolers. Extensive thermoreflectance imaging characterization was performed

  5. Development, implementation and verification of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physics-based Si/SiGe HBT model for millimeter Abstract A physics-based large-signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  6. Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient thermoreflectance technique

    E-Print Network [OSTI]

    Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient the thermomechanical properties of two Si/SiGe superlattices. A theoretical model is presented which agrees well-lattice vectors is smaller.8 In the experiments reported here we have applied a FTT technique to study two Si/SiGe

  7. P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1

    E-Print Network [OSTI]

    P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1 , Gerry Robinson, Chris and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were]. SiGe is a good thermoelectric material especially for high temperature applications [11

  8. Buckling suppression of SiGe islands on compliant substrates Haizhou Yina)

    E-Print Network [OSTI]

    Duffy, Thomas S.

    Buckling suppression of SiGe islands on compliant substrates Haizhou Yina) Center for Photonics structure made of SiGe and a cap layer were studied by both modeling and experiment. Both epitaxial silicon and accelerate the lateral relaxation, so that larger, flat, relaxed SiGe islands can be achieved. Using a 31 nm

  9. The revolution in SiGe: impact on device electronics D.L. Haramea,*

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    The revolution in SiGe: impact on device electronics D.L. Haramea,* , S.J. Koesterb , G. Freemanc, Hopewell Junction, NY, USA d Georgia Technical University, Atlanta, GA, USA Abstract SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which

  10. CRYSTALLINE CERAMIC WASTE FORMS: REFERENCE FORMULATION REPORT

    SciTech Connect (OSTI)

    Brinkman, K.; Fox, K.; Marra, J.

    2012-05-15T23:59:59.000Z

    The research conducted in this work package is aimed at taking advantage of the long term thermodynamic stability of crystalline ceramics to create more durable waste forms (as compared to high level waste glass) in order to reduce the reliance on engineered and natural barrier systems. Durable ceramic waste forms that incorporate a wide range of radionuclides have the potential to broaden the available disposal options and to lower the storage and disposal costs associated with advanced fuel cycles. Assemblages of several titanate phases have been successfully demonstrated to incorporate radioactive waste elements, and the multiphase nature of these materials allows them to accommodate variation in the waste composition. Recent work has shown that they can be successfully produced from a melting and crystallization process. The objective of this report is to explain the design of ceramic host systems culminating in a reference ceramic formulation for use in subsequent studies on process optimization and melt property data assessment in support of FY13 melter demonstration testing. The waste stream used as the basis for the development and testing is a combination of the projected Cs/Sr separated stream, the Trivalent Actinide - Lanthanide Separation by Phosphorous reagent Extraction from Aqueous Komplexes (TALSPEAK) waste stream consisting of lanthanide fission products, the transition metal fission product waste stream resulting from the transuranic extraction (TRUEX) process, and a high molybdenum concentration with relatively low noble metal concentrations. In addition to the combined CS/LN/TM High Mo waste stream, variants without Mo and without Mo and Zr were also evaluated. Based on the results of fabricating and characterizing several simulated ceramic waste forms, two reference ceramic waste form compositions are recommended in this report. The first composition targets the CS/LN/TM combined waste stream with and without Mo. The second composition targets with CS/LN/TM combined waste stream with Mo and Zr removed. Waste streams that contain Mo must be produced in reducing environments to avoid Cs-Mo oxide phase formation. Waste streams without Mo have the ability to be melt processed in air. A path forward for further optimizing the processing steps needed to form the targeted phase assemblages is outlined in this report. Processing modifications including melting in a reducing atmosphere, and controlled heat treatment schedules are anticipated to improve the targeted elemental partitioning.

  11. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmore »gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.« less

  12. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    SciTech Connect (OSTI)

    Atabaev, I. G., E-mail: atvi@uzsci.net; Matchanov, N. A.; Hajiev, M. U., E-mail: hajiev_mardonbek@mail.ru; Pak, V.; Saliev, T. M. [Academy of Sciences of Uzbekistan, Starodubtsev Physicotechnical Institute (Uzbekistan)

    2010-05-15T23:59:59.000Z

    The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D{sub ss}). It is shown that the barrier height in the structures under study correlates with the D{sub ss} value and germanium content in the Si{sub 1-x}Ge{sub x} alloy.

  13. Reference repository design concept for bedded salt

    SciTech Connect (OSTI)

    Carpenter, D.W.; Martin, R.W.

    1980-10-08T23:59:59.000Z

    A reference design concept is presented for the subsurface portions of a nuclear waste repository in bedded salt. General geologic, geotechnical, hydrologic and geochemical data as well as descriptions of the physical systems are provided for use on generic analyses of the pre- and post-sealing performance of repositories in this geologic medium. The geology of bedded salt deposits and the regional and repository horizon stratigraphy are discussed. Structural features of salt beds including discontinuities and dissolution features are presented and their effect on repository performance is discussed. Seismic hazards and the potential effects of earthquakes on underground repositories are presented. The effect on structural stability and worker safety during construction from hydrocarbon and inorganic gases is described. Geohydrologic considerations including regional hydrology, repository scale hydrology and several hydrological failure modes are presented in detail as well as the hydrological considerations that effect repository design. Operational phase performance is discussed with respect to operations, ventilation system, shaft conveyances, waste handling and retrieval systems and receival rates of nuclear waste. Performance analysis of the post sealing period of a nuclear repository is discussed, and parameters to be used in such an analysis are presented along with regulatory constraints. Some judgements are made regarding hydrologic failure scenarios. Finally, the design and licensing process, consistent with the current licensing procedure is described in a format that can be easily understood.

  14. SAPHIRE 8 Volume 2 - Technical Reference

    SciTech Connect (OSTI)

    C. L. Smith; S. T. Wood; W. J. Galyean; J. A. Schroeder; M. B. Sattison

    2011-03-01T23:59:59.000Z

    The Systems Analysis Programs for Hands-on Integrated Reliability Evaluations (SAPHIRE) refers to a set of computer programs that were developed to create and analyze probabilistic risk assessment (PRAs). Herein information is provided on the principles used in the construction and operation of Version 8.0 of the SAPHIRE system. This report summarizes the fundamental mathematical concepts of sets and logic, fault trees, and probability. This volume then describes the algorithms used to construct a fault tree and to obtain the minimal cut sets. It gives the formulas used to obtain the probability of the top event from the minimal cut sets, and the formulas for probabilities that apply for various assumptions concerning reparability and mission time. It defines the measures of basic event importance that SAPHIRE can calculate. This volume gives an overview of uncertainty analysis using simple Monte Carlo sampling or Latin Hypercube sampling, and states the algorithms used by this program to generate random basic event probabilities from various distributions. Also covered are enhance capabilities such as seismic analysis, Workspace algorithms, cut set "recovery," end state manipulation, and use of "compound events."

  15. WECC Variable Generation Planning Reference Book: Appendices

    SciTech Connect (OSTI)

    Makarov, Yuri V.; Du, Pengwei; Etingov, Pavel V.; Ma, Jian; Vyakaranam, Bharat

    2013-05-13T23:59:59.000Z

    The document titled “WECC Variable Generation Planning Reference Book”. This book is divided into two volumes; one is the main document (volume 1)and the other is appendices (volume 2). The main document is a collection of the best practices and the information regarding the application and impact of variables generation on power system planning. This volume (appendices) has additional information on the following topics: Probabilistic load flow problems. 2. Additional useful indices. 3. high-impact low-frequency (HILF) events. 4. Examples of wide-area nomograms. 5. Transmission line ratings, types of dynamic rating methods. 6. Relative costs per MW-km of different electric power transmission technologies. 7. Ultra-high voltage (UHV) transmission. 8.High voltage direct current (VSC-HVDC). 9. HVDC. 10. Rewiring of existing transmission lines. 11. High-temperature low sag (HTLS) conductors. 12. The direct method and energy functions for transient stability analysis in power systems. 13.Blackouts caused by voltage instability. 14. Algorithm for parameter continuation predictor-corrector methods. 15. Approximation techniques available for security regions. 16. Impacts of wind power on power system small signals stability. 17. FIDVR. 18. FACTS. 19. European planning standard and practices. 20. International experience in wind and solar energy sources. 21. Western Renewable Energy Zones (WREZ). 22. various energy storage technologies. 23. demand response. 24. BA consolidation and cooperation options. 25. generator power management requirements and 26. European planning guidelines.

  16. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01T23:59:59.000Z

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  17. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01T23:59:59.000Z

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  18. Partners for progress in HVDC: GE and EPRI

    SciTech Connect (OSTI)

    Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

    1983-01-01T23:59:59.000Z

    Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

  19. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

    SciTech Connect (OSTI)

    Le, Son T.; Jannaty, P.; Luo, Xu; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, Samuel T.

    2012-10-31T23:59:59.000Z

    We present silicon-compatible tri-gated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high ION ~ 2 µA/µm, fully suppressed ambipolarity, and a sub-threshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with good ION/IOFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

  20. Calculation of thermal parameters of SiGe microbolometers

    E-Print Network [OSTI]

    Voitsekhovskii, A V; Yuryev, V A; Nesmelov, S N; 10.1007/s11182-008-9015-4

    2012-01-01T23:59:59.000Z

    The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10$^-3$ cm$^2$K/W at the SiGe interface.

  1. Proton-proton Scattering Above 3 GeV/c

    SciTech Connect (OSTI)

    A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

    2010-01-01T23:59:59.000Z

    A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

  2. Observation of a Charged Charmoniumlike Structure in e+e-??+?-J/? at ?s=4.26??GeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ablikim, M.; Achasov, M. N.; Ai, X. C.; Albayrak, O.; Ambrose, D. J.; An, F. F.; An, Q.; Bai, J. Z.; Baldini Ferroli, R.; Ban, Y.; Becker, J.; Bennett, J. V.; Bertani, M.; Bian, J. M.; Boger, E.; Bondarenko, O.; Boyko, I.; Briere, R. A.; Bytev, V.; Cai, H.; Cai, X.; Cakir, O.; Calcaterra, A.; Cao, G. F.; Cetin, S. A.; Chang, J. F.; Chelkov, G.; Chen, G.; Chen, H. S.; Chen, J. C.; Chen, M. L.; Chen, S. J.; Chen, X.; Chen, Y. B.; Cheng, H. P.; Chu, Y. P.; Cronin-Hennessy, D.; Dai, H. L.; Dai, J. P.; Dedovich, D.; Deng, Z. Y.; Denig, A.; Denysenko, I.; Destefanis, M.; Ding, W. M.; Ding, Y.; Dong, L. Y.; Dong, M. Y.; Du, S. X.; Fang, J.; Fang, S. S.; Fava, L.; Feng, C. Q.; Friedel, P.; Fu, C. D.; Fu, J. L.; Fuks, O.; Gao, Q.; Gao, Y.; Geng, C.; Goetzen, K.; Gong, W. X.; Gradl, W.; Greco, M.; Gu, M. H.; Gu, Y. T.; Guan, Y. H.; Guo, A. Q.; Guo, L. B.; Guo, T.; Guo, Y. P.; Han, Y. L.; Harris, F. A.; He, K. L.; He, M.; He, Z. Y.; Held, T.; Heng, Y. K.; Hou, Z. L.; Hu, C.; Hu, H. M.; Hu, J. F.; Hu, T.; Huang, G. M.; Huang, G. S.; Huang, J. S.; Huang, L.; Huang, X. T.; Huang, Y.; Huang, Y. P.; Hussain, T.; Ji, C. S.; Ji, Q.; Ji, Q. P.; Ji, X. B.; Ji, X. L.; Jiang, L. L.; Jiang, X. S.; Jiao, J. B.; Jiao, Z.; Jin, D. P.; Jin, S.; Jing, F. F.; Kalantar-Nayestanaki, N.; Kavatsyuk, M.; Kopf, B.; Kornicer, M.; Kühn, W.; Lai, W.; Lange, J. S.; Lara, M.; Larin, P.; Leyhe, M.; Li, C. H.; Li, Cheng; Li, Cui; Li, D. M.; Li, F.; Li, G.; Li, H. B.; Li, J. C.; Li, K.; Li, Lei; Li, Q. J.; Li, S. L.; Li, W. D.; Li, W. G.; Li, X. L.; Li, X. N.; Li, X. Q.; Li, X. R.; Li, Z. B.; Liang, H.; Liang, Y. F.; Liang, Y. T.; Liao, G. R.; Liao, X. T.; Lin, D.; Liu, B. J.; Liu, C. L.; Liu, C. X.; Liu, F. H.; Liu, Fang; Liu, Feng; Liu, H.; Liu, H. B.; Liu, H. H.; Liu, H. M.; Liu, H. W.; Liu, J. P.; Liu, K.; Liu, K. Y.; Liu, Kai; Liu, P. L.; Liu, Q.; Liu, S. B.; Liu, X.; Liu, Y. B.; Liu, Z. A.; Liu, Zhiqiang; Liu, Zhiqing; Loehner, H.; Lou, X. C.; Lu, G. R.; Lu, H. J.; Lu, J. G.; Lu, Q. W.; Lu, X. R.; Lu, Y. P.; Luo, C. L.; Luo, M. X.; Luo, T.; Luo, X. L.; Lv, M.; Ma, C. L.; Ma, F. C.; Ma, H. L.; Ma, Q. M.; Ma, S.; Ma, T.; Ma, X. Y.; Maas, F. E.; Maggiora, M.; Malik, Q. A.; Mao, Y. J.; Mao, Z. P.; Messchendorp, J. G.; Min, J.; Min, T. J.; Mitchell, R. E.; Mo, X. H.; Mo, Y. J.; Moeini, H.; Morales Morales, C.; Moriya, K.; Muchnoi, N. Yu.; Muramatsu, H.; Nefedov, Y.; Nicholson, C.; Nikolaev, I. B.; Ning, Z.; Olsen, S. L.; Ouyang, Q.; Pacetti, S.; Park, J. W.; Pelizaeus, M.; Peng, H. P.; Peters, K.; Ping, J. L.; Ping, R. G.; Poling, R.; Prencipe, E.; Qi, M.; Qian, S.; Qiao, C. F.; Qin, L. Q.; Qin, X. S.; Qin, Y.; Qin, Z. H.; Qiu, J. F.; Rashid, K. H.; Rong, G.; Ruan, X. D.; Sarantsev, A.; Schaefer, B. D.; Shao, M.; Shen, C. P.; Shen, X. Y.; Sheng, H. Y.; Shepherd, M. R.; Song, W. M.; Song, X. Y.; Spataro, S.; Spruck, B.; Sun, D. H.; Sun, G. X.; Sun, J. F.; Sun, S. S.; Sun, Y. J.; Sun, Y. Z.; Sun, Z. J.; Sun, Z. T.; Tang, C. J.; Tang, X.; Tapan, I.; Thorndike, E. H.; Toth, D.; Ullrich, M.; Uman, I.; Varner, G. S.; Wang, B. Q.; Wang, D.; Wang, D. Y.; Wang, K.; Wang, L. L.; Wang, L. S.; Wang, M.; Wang, P.; Wang, P. L.; Wang, Q. J.; Wang, S. G.; Wang, X. F.; Wang, X. L.; Wang, Y. D.; Wang, Y. F.; Wang, Y. Q.; Wang, Z.; Wang, Z. G.; Wang, Z. Y.; Wei, D. H.; Wei, J. B.; Weidenkaff, P.; Wen, Q. G.; Wen, S. P.; Werner, M.; Wiedner, U.; Wu, L. H.; Wu, N.; Wu, S. X.; Wu, W.; Wu, Z.; Xia, L. G.; Xia, Y. X.; Xiao, Z. J.; Xie, Y. G.; Xiu, Q. L.; Xu, G. F.; Xu, G. M.; Xu, Q. J.; Xu, Q. N.; Xu, X. P.; Xu, Z. R.; Xue, F.; Xue, Z.; Yan, L.; Yan, W. B.; Yan, Y. H.; Yang, H. X.; Yang, Y.; Yang, Y. X.; Ye, H.; Ye, M.; Ye, M. H.; Yu, B. X.; Yu, C. X.; Yu, H. W.; Yu, J. S.; Yu, S. P.; Yuan, C. Z.; Yuan, Y.; Zafar, A. A.; Zallo, A.; Zang, S. L.; Zeng, Y.; Zhang, B. X.; Zhang, B. Y.; Zhang, C.; Zhang, C. C.; Zhang, D. H.; Zhang, H. H.; Zhang, H. Y.; Zhang, J. Q.; Zhang, J. W.; Zhang, J. Y.; Zhang, J. Z.; Zhang, LiLi; Zhang, R.; Zhang, S. H.; Zhang, X. J.; Zhang, X. Y.; Zhang, Y.; Zhang, Y. H.; Zhang, Z. P.; Zhang, Z. Y.; Zhang, Zhenghao; Zhao, G.; Zhao, H. S.; Zhao, J. W.; Zhao, K. X.; Zhao, Lei; Zhao, Ling; Zhao, M. G.; Zhao, Q.; Zhao, S. J.; Zhao, T. C.; Zhao, X. H.; Zhao, Y. B.; Zhao, Z. G.; Zhemchugov, A.; Zheng, B.; Zheng, J. P.; Zheng, Y. H.; Zhong, B.; Zhou, L.; Zhou, X.; Zhou, X. K.; Zhou, X. R.; Zhu, C.; Zhu, K.; Zhu, K. J.; Zhu, S. H.; Zhu, X. L.; Zhu, Y. C.; Zhu, Y. M.; Zhu, Y. S.; Zhu, Z. A.; Zhuang, J.; Zou, B. S.; Zou, J. H.; BESIII Collaboration

    2013-06-01T23:59:59.000Z

    We study the process e+e???+??J/? at a center-of-mass energy of 4.260 GeV using a 525??pb?1 data sample collected with the BESIII detector operating at the Beijing Electron Positron Collider. The Born cross section is measured to be (62.9±1.9±3.7)??pb, consistent with the production of the Y(4260). We observe a structure at around 3.9??GeV/c2 in the ?±J/? mass spectrum, which we refer to as the Zc(3900). If interpreted as a new particle, it is unusual in that it carries an electric charge and couples to charmonium. A fit to the ?±J/? invariant mass spectrum, neglecting interference, results in a mass of (3899.0±3.6±4.9)??MeV/c2 and a width of (46±10±20)??MeV. Its production ratio is measured to be R=(?(e+e???±Zc(3900)???+??J/?)/?(e+e???+??J/?))=(21.5±3.3±7.5)%. In all measurements the first errors are statistical and the second are systematic.

  3. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30T23:59:59.000Z

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  4. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect (OSTI)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01T23:59:59.000Z

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

  5. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10T23:59:59.000Z

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  6. Gamma-Ray Bursts Above 1 GeV

    E-Print Network [OSTI]

    Matthew G. Baring

    1997-11-21T23:59:59.000Z

    One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

  7. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey [University of Connecticut, JLAB

    2015-01-01T23:59:59.000Z

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  8. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained SiÕstrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  9. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  10. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28T23:59:59.000Z

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  11. Large-angle production of charged pions by 3 GeV/c - 12.9 GeV/c protons on beryllium, aluminium and lead targets

    E-Print Network [OSTI]

    HARP Collaboration

    2007-09-21T23:59:59.000Z

    Measurements of the double-differential $\\pi^{\\pm}$ production cross-section in the range of momentum $100 \\MeVc \\leq p beryllium, proton--aluminium and proton--lead collisions are presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12.9 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was performed using a small-radius cylindrical time projection chamber (TPC) placed inside a solenoidal magnet. Incident particles were identified by an elaborate system of beam detectors. Results are obtained for the double-differential cross-sections at six incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc, 8.9 \\GeVc (Be only), 12 \\GeVc and 12.9 \\GeVc (Al only)) and compared to previously available data.

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    Office of Environmental Management (EM)

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    Broader source: Energy.gov (indexed) [DOE]

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    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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    E-Print Network [OSTI]

    Smith, Geoffrey

    Polymorphic Typing of Variables and References GEOFFREY SMITH Florida International University reflect the views of the National Science Foundation. Authors' addresses: G. Smith, School of Computer

  16. Sandia National Laboratories: blade NDI reference sample library

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NDI reference sample library Sandia Participated in AMII to Support American-Made Wind-Turbine Blades On December 3, 2014, in Computational Modeling & Simulation, Energy, Materials...

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    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

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    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Review Results Report - Cross-reference of Project Investigators, Projects, and Organizations 2011 Annual Merit Review Results Report - Hybrid and Vehicle Systems Technologies...

  20. approval reference number: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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