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1

From: Jim Burson <jburson@swtransco.coop>;  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Jim Burson Jim Burson <jburson@swtransco.coop>; To: "dswpwrmrk@wapa.gov" CC: Donald Kimball , Patrick Ledger , Richard Kurtz Date: 10/20/10 8:25 AM Subject: ED5-Palo Verde Hub Project (SPPR Proposal) Attachments: westernspprsupport.docx.pdf Dear Mr. Moe: Southwest Transmission Cooperative, Inc. (SWTC) is a customer of Western Area Power Administration (Western). We have multiply Parker- Davis Project transmission service contracts with Western. SWTC agrees with the attached SPPR letter, supporting the expansion of the Parker-Davis Project to include the ED5-Palo Verde Hub project referred to in Western's October 6th open meeting as the "SPPR

2

From: Mohave Sun Power <mohavesunpower@gmail.com>;  

Broader source: Energy.gov (indexed) [DOE]

Mohave Sun Power Mohave Sun Power <mohavesunpower@gmail.com>; To: Date: 4/3/2009 5:12 PM Subject: public comments to Western Transmission Infrastructure Program Regarding Western's Transmission Infrastructure Program ("Program") for Recovery Act funding, we submit the following public comments. All of these comments are to better clarify the "Project Readiness" criteria critical to the Program's success. They are characteristics of projects that have a higher chance of getting financed with provisions of the Recovery Act: 1. We believe that Western should put a higher priority on projects that are already in a Western LGIP queue. The justification for this higher priority is that these projects have made substantial progress

3

From: Ed Roman <EROMAN@smud.org>;  

Broader source: Energy.gov (indexed) [DOE]

Ed Roman Ed Roman <EROMAN@smud.org>; To: CC: , "Howard Hirahara" Date: 4/3/2009 10:30 AM Subject: SMUD'S COMMENTS AND QUESTIONS ON THE PROPOSED TIP Attachments: AGM ES 09-006 Commnet Letter on TIP.pdf Attached are comments of the Sacramento Municipal Utility District (SMUD) on the proposed principles, policies and practices that the Western Area Power Administration (Western) plans to use to implement the authority provided to it in section 402 of the American Recovery and Reinvestment Act of 2009 (Recovery Act). These comments are provided in response to the Notice of Proposed Program and Request for Public Comments as posted by the Western Area Power Administration (Western) in

4

Energy Cost Calculator for Commercial Heat Pumps (5.4 &gt;=<; 20 Tons) |  

Broader source: Energy.gov (indexed) [DOE]

Heat Pumps (5.4 >=< 20 Tons) Heat Pumps (5.4 &gt;=<; 20 Tons) Energy Cost Calculator for Commercial Heat Pumps (5.4 >=< 20 Tons) October 8, 2013 - 2:22pm Addthis Vary equipment size, energy cost, hours of operation, and /or efficiency level. INPUT SECTION Input the following data (if any parameter is missing, calculator will set to default value). Defaults Project Type New Installation Replacement New Installation Condenser Type Air Source Water Source Air Source Existing Capacity * ton - Existing Cooling Efficiency * EER - Existing Heating Efficiency * COP - Existing IPLV Efficiency * IPLV - New Capacity ton 10 tons New Cooling Efficiency EER 10.1 EER New Heating Efficiency COP 3.2 COP New IPLV Efficiency IPLV 10.4 IPLV Energy Cost $ per kWh $0.06 per kWh

5

To: Mansueti, Lawrence &lt;Lawrence.Mansueti@hq.doe.gov>;  

Broader source: Energy.gov (indexed) [DOE]

&lt;ecchimento@comcast.net>; To: Mansueti, Lawrence Sent: Fri Nov 18 10:58:43 2005 Subject: Letter (9/12/05) for filing in DOE DCPSC Docket #EO-05-01 Mr. Mansueti, Would you please file for consideration the attached letter, originally sent to FERC, in DOE's Docket No. EO-05-01 regarding the DCPSC complaint? Thank you. Elizabeth Chimento and Poul Hertel 1200 North Pitt Street 1217 Michigan Court Alexandria, VA 22314 Alexandria, VA 22314 September 12, 2005 Joseph T. Kelliher, Chairman Federal Energy Regulatory Commission 888 First Street, N.E. Washington, D.C. 20426 Re: District of Columbia Public Service Commission Emergency Petition and Complaint Docket No. EL05-145-000 Dear Chairman Kelliher:

6

Lt.  

Office of Legacy Management (LM)

TJ3: 7-Z TJ3: 7-Z 2.u 7 ifp&i?: 9:. .$&q Lt. ~ 3," .z' b ( $ -&7 ;" i C$' d. , : e-. flp w EmfP af XXPW 3PWlJ DEPARTMENT OF ENVIRONMENTAL PROTECTION DIVISION OF ENVIRONMENTAL QUALITY BUREAU OF RADIATION PROTECTION 380 SCOTCH ROAD. TRENTON. N. J. 08628 December 21, 1978 Ms. Louisa Little Pierpont Associates, Inc. 405 Lexington Avenue New York City, New York 10017 Dear Ms. Little: The purpose of this letter is to inquire about the present status of the former M. hT. Kellogg site (Kellex) located at the intersection of New Jersey Route 440 and Kellogg Street in Jersey City, New Jersey. The N. J. Department of Environmental Protection (N.J. DEP) has received fnformation that construction is in progress at this site which has resulted in

7

&lt;AVS>;  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Antelope Valley Station to Neset Transmission Project Antelope Valley Station to Neset Transmission Project This environmental impact statement (EIS) prepared by the U.S. Department of Agriculture (USDA), Rural Utilities Service (RUS) provides information about the potential environmental impacts of the proposed Antelope Valley Station (AVS) to Neset Transmission Project. This project, proposed by Basin Electric Power Cooperative (Basin Electric), would include a new 345-kilovolt (kV) transmission line connecting the existing AVS, Charlie Creek, Williston, and Neset substations and the newly proposed Judson and Tande 345-kV substations. In addition to the approximately 190 miles of new 345-kV transmission line, the project would also construct two new 345 kV substations (Judson Substation west of Williston and Tande Substation southeast of Tioga), and several miles of 230-kV transmission line to connect the 345-kV transmission line into the existing area system.

8

&lt;GrandPrairie>;  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Grande Praire Wind Farm, O'Neill, NE Grande Praire Wind Farm, O'Neill, NE The Western Area Power Administration (Western), an agency of the Department of Energy (DOE), intends to prepare an environmental impact statement (EIS) on the proposed interconnection of the Grande Prairie Wind Farm (Project) in Holt County, near the city of O'Neill, Nebraska. Grande Prairie Wind, LLC (Grande Prairie), a subsidiary of Midwest Wind Energy Development Group, LLC, has applied to Western to interconnect their proposed Project to Western's power transmission system. Western is issuing this notice to inform the public and interested parties about Western's intent to prepare an EIS, conduct a public scoping process, and invite the public to comment on the scope, proposed action, alternatives, and other issues to be addressed in the EIS.

9

GT-Kraftwerke  

Science Journals Connector (OSTI)

...Typischerweise werden Gasturbinen älterer Bauart wie GT13E2 (Alstom), SGT5-2000E (Siemens V94.2) und 9E (GE) meist bei Kunden...

Lothar Balling

2010-01-01T23:59:59.000Z

10

JOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL RESISTIVITY AND THERMOELECTRIC POWER OF LIQUID Ge-Sb AND Pb-Sb ALLOYS  

E-Print Network [OSTI]

Fig. 1. v Electrical resistivity of liquid Pbl-x~bx alloys as a function of temperature. the liquid were quoted as dt%Sb Fig. 2. - Electrical resistivity of liquid Pb-Sb alloys at 660°C and Ge-Sb alloysJOURNAL DE PHYSIQUE CoZZoque C8, supplgment au n08, Tome 42, aoGt 2980, page C8-519 ELECTRICAL

Boyer, Edmond

11

A new measurement of the structure functions $P_{LL}-P_{TT}/epsilon$ and $P_{LT}$ in virtual Compton scattering at $Q^2=$ 0.33 (GeV/c)$^2$  

E-Print Network [OSTI]

The cross section of the $ep \\to e' p' \\gamma$ reaction has been measured at $Q^2 = 0.33$ (GeV/c)$^2$. The experiment was performed using the electron beam of the MAMI accelerator and the standard detector setup of the A1 Collaboration. The cross section is analyzed using the low-energy theorem for virtual Compton scattering, yielding a new determination of the two structure functions $P_LL}-P_{TT}/epsilon$ and $P_{LT}$ which are linear combinations of the generalized polarizabilities of the proton. We find somewhat larger values than in the previous investigation at the same $Q^2$. This difference, however, is purely due to our more refined analysis of the data. The results tend to confirm the non-trivial $Q^2$-evolution of the generalized polarizabilities and call for more measurements in the low-$Q^2$ region ($\\le$ 1 (GeV/c)$^2$).

The MAMI-A1 Collaboration; :; P. Janssens; L. Doria; P. Achenbach; C. Ayerbe Gayoso; D. Baumann; J. C. Bernauer; I. K. Bensafa; R. Böhm; D. Bosnar; E. Burtin; N. D'Hose; X. Defaÿ; M. Ding; M. O. Distler; H. Fonvieille; J. Friedrich; J. M. Friedrich; G. Laveissière; M. Makek; J. Marroncle; H. Merkel; U. Müller; L. Nungesser; B. Pasquini; J. Pochodzalla; O. Postavaru; M. Potokar; D. Ryckbosch; S. Sanchez Majos; B. S. Schlimme; M. Seimetz; S. Širca; G. Tamas; R. Van de Vyver; L. Van Hoorebeke; A. Van Overloop; Th. Walcher; M. Weinriefer

2008-03-06T23:59:59.000Z

12

Manhattan Project: San Ildefonso Pueblo Party&lt;/FONT>;  

Office of Scientific and Technical Information (OSTI)

SAN ILDEFONSO PUEBLO PARTY SAN ILDEFONSO PUEBLO PARTY Los Alamos (December 1945) Resources > Photo Gallery San Ildefonso Pueblo party, December 1945 A special 1995 issue of the monthly publication of the Los Alamos National Laboratory, "Dateline: Los Alamos," described the party this way: "On a cold December night in 1945, the San Ildefonso Pueblo, a tribe of Native Americans living next to Los Alamos, invited a group of Los Alamos square dancers to their pueblo for an evening of fun and entertainment. The two communities had seen a lot of each other during the war as men and women from the pueblo commuted daily to work at Los Alamos. The association produced a cross fertilization of cultures. "Bernice Brode wrote: 'Some of us had more Indian crafts in our Army apartments than the Indians had in their homes, (and) modern American conveniences such as refrigerators and linoleum began cropping up in the pueblo.' At the dance, the Indians performed for the square dancers and the square dancers performed for the Indians. After the demonstrations, members from the two groups began dancing with each other. Charlie Masters, a teacher at the Los Alamos school, wrote: 'This fiesta-hoedown I like to remember as the climax of our relations with the natives.'

13

Beam-Target Double Spin Asymmetry A_LT in Charged Pion Production from Deep Inelastic Scattering on a Transversely Polarized He-3 Target at 1.4GeV^2  

E-Print Network [OSTI]

We report the first measurement of the double-spin asymmetry $A_{LT}$ for charged pion electroproduction in semi\

J. Huang; K. Allada; C. Dutta; J. Katich; X. Qian; Y. Wang; Y. Zhang; K. Aniol; J. R. M. Annand; T. Averett; F. Benmokhtar; W. Bertozzi; P. C. Bradshaw; P. Bosted; A. Camsonne; M. Canan; G. D. Cates; C. Chen; J. -P. Chen; W. Chen; K. Chirapatpimol; E. Chudakov; E. Cisbani; J. C. Cornejo; F. Cusanno; M. M. Dalton; W. Deconinck; C. W. de Jager; R. De Leo; X. Deng; A. Deur; H. Ding; P. A. M. Dolph; D. Dutta; L. El Fassi; S. Frullani; H. Gao; F. Garibaldi; D. Gaskell; S. Gilad; R. Gilman; O. Glamazdin; S. Golge; L. Guo; D. Hamilton; O. Hansen; D. W. Higinbotham; T. Holmstrom; M. Huang; H. F. Ibrahim; M. Iodice; X. Jiang; G. Jin; M. K. Jones; A. Kelleher; W. Kim; A. Kolarkar; W. Korsch; J. J. LeRose; X. Li; Y. Li; R. Lindgren; N. Liyanage; E. Long; H. -J. Lu; D. J. Margaziotis; P. Markowitz; S. Marrone; D. McNulty; Z. -E. Meziani; R. Michaels; B. Moffit; C. Muñoz Camacho; S. Nanda; A. Narayan; V. Nelyubin; B. Norum; Y. Oh; M. Osipenko; D. Parno; J. C. Peng; S. K. Phillips; M. Posik; A. J. R. Puckett; Y. Qiang; A. Rakhman; R. D. Ransome; S. Riordan; A. Saha; B. Sawatzky; E. Schulte; A. Shahinyan; M. H. Shabestari; S. Širca; S. Stepanyan; R. Subedi; V. Sulkosky; L. -G. Tang; A. Tobias; G. M. Urciuoli; I. Vilardi; K. Wang; B. Wojtsekhowski; X. Yan; H. Yao; Y. Ye; Z. Ye; L. Yuan; X. Zhan; Y. -W. Zhang; B. Zhao; X. Zheng; L. Zhu; X. Zhu; X. Zong; for the Jefferson Lab Hall A Collaboration

2012-02-10T23:59:59.000Z

14

C. Lt. Cooper  

Office of Legacy Management (LM)

C. Lt. Cooper C. Lt. Cooper c i+ ."',Z &+.), . - p 1 i ,P. f %:,:-I ! 19~~3 L. - F.M \ E3rush 3eryllium Company ~~~~io,tp!rr~~~~~~~~!~~~~~ I. * I/ :@ k 3 on August 2nd, I visited Brush beryllium Company along with Edajor &dlock and %,l,jor Eussell. arush representatives in the conference were Dr. C, B. Saver, ?resident, and Xessrs. Ejellgren, Christiansen, Fletcher and Zavarine. production of Tuballoy at arush ceased on July 31St* Furnaces Tre- tiously used fmTuballoy will be remodelled for manufacture of aeryl- lium, thus releasing melting furnaces at the Loraine plant for produc- tion of beryllium fluoride. This shift will make. their metal production capacity 600 pounds per month of which 500 lbs. will be available,to the project. It was agreed that the kngineers would place a,n order with arush for

15

GT Solar Technologies formerly GT Equipment Technologies | Open Energy  

Open Energy Info (EERE)

GT Solar Technologies formerly GT Equipment Technologies GT Solar Technologies formerly GT Equipment Technologies Jump to: navigation, search Name GT Solar Technologies (formerly GT Equipment Technologies) Place Merrimack, New Hampshire Zip 3054 Product US-based manufacturer of turnkey multicrystalline PV wafer, cell, and module fabrication lines; also offers EFG and dentritic growth furnaces. Coordinates 42.872517°, -71.490603° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.872517,"lon":-71.490603,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

16

Robust LT codes with alternating feedback  

Science Journals Connector (OSTI)

In this paper, we propose robust LT codes with alternating feedback (LT-AF codes), which lightly utilize the feedback channel and surpass the performance of existing LT codes with feedback. In LT-AF codes, we consider a loss prone feedback channel for ... Keywords: Erasure channel, Feedback channel, Forward error correction codes, LT codes, Rateless codes

Ali Talari, Nazanin Rahnavard

2014-08-01T23:59:59.000Z

17

G?)~~&lt;+!T  

Office of Legacy Management (LM)

- - G?)~~<+!T (?-?A / ;--\h \ , ; - \\ HAZARDOUS WASTE - _ I N S T A L L A T I O N ASSESSMENT REPORT BY D A V I D N - F A U V E R MAY 1986 IT kh; E,?$$ C / ~ R / I R ~ WORK PERFORMED UNDER C O N T R A C T NO. D E - A C 0 8 - 8 4 N V 1 0 3 2 7 REYNOLDS E L E C T R I C A L g ENGINEERING C O * , INC POST O F F I C E BOX 14400 LAS VEGAS, NV 8 9 1 1 q DISCLAIMER Portions of this document may be illegible in electronic image products. Images are produced from the best available original document. HAZARDOUS W A S T E I N S T A L L A T I O N A S S E S S M E N T R E P O R T B Y D A V I D N. F A U V E R MAY 1986 WORK PERFORMED U N D E R C O N T R A C T NO. D E - A C 0 8 - 8 4 N V 1 0 3 2 7 R E Y N O L D S E L E C T R I C A L & E N G I N E E R I N G COW, I N C - P O S T O F F I C E B O X 1 4 4 0 0 L A S VEGAS, N V 8 9 1 1 q This page intentionally left blank DISCLAIMER T h i s r e p o r t was p r e p a r e d as an account o f work sponsored by an agency o

18

A-&lt;  

Broader source: Energy.gov (indexed) [DOE]

< &lt; Enclosure 2 ..- Page 1 of 2 RECORDS DlSPOSrrlON AUTHORITY (k IrrEtnx;tmr wl ma^) DATE RECEIVED 1. FROM (AgbncyoreaWWmmt NOTIFICATION TO AGENCY DepamncntofErmyy . 1 4.. NA?$E OF PERSON WITH WHOM TO CONFER 5. TELEPHONE I 6 . A G t N C Y CtK l ItlCATION I ~ E a r t i f y t M I m ~ b 3 ~ f D T ~ . o 1 c 1 c y m ~ p b c . t r i n b . g t o t h e ~ o f ~ r s c o r e b u d t f r t t t h a r s c o r d r ~ f o r ~ m t h s d b e h d p r g s ( s ) w s n o t m n r c b d f o r t h a k a i n s r r o f t h b . g c n c y ~ w i l l n o t b s m d s d r r R t r t h s ~ p c w i o d r r p e c i f i e d ; P d m ~ a n c u r r s n o e f r a t h e ~ ~ D f f i a , w h p r w k a n s o f R t h 8 o f t h t GAO ktuunl for Guidance d Fsddnl Apsndro, Core Contract Records See attached description 115.109 NSN STANDARD FORM 115 (REV. 3.91) PREVIOUS EDITION NOT USABLE P-bul by NARA 36 CFR 1228 Enclosure 2 Page 2 of 2 (1) Unit - PNR Contracts and Security ~ivision (2) Description - Contracts for procurement of reactor cores,

19

IES &lt;Virtual Environment&gt; version 6.1  

Broader source: Energy.gov (indexed) [DOE]

Tax Deduction Qualified Software Tax Deduction Qualified Software IES version 6.1 On this page you'll find information about the IES version 6.1 qualified computer software (buildings.energy.gov/qualified_software.html), which calculates energy and power cost savings that meet federal tax incentive requirements for commercial buildings. Date Documentation Received by DOE: 22 December 2009 Statements in quotes are from the software developer. Internal Revenue Code §179D (c)(1) and (d) Regulations Notice 2006-52, Section 6 requirements as amplified by Notice 2008-40, Section 4 requirements. (1) The name, address, and (if applicable) web site of the software developer; Integrated Environmental Solutions Limited Helix Building, West Of Scotland

20

Spin-Assisted Layer-by-Layer Assembly: Variation of Stratification as Studied with Neutron Reflectivity&lt;xref ref-type="fn" rid="end1"&gt;<sup></sup></xref>;  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

21/la9014042 21/la9014042 14017 Langmuir 2009, 25(24), 14017-14024 Published on Web 07/06/2009 pubs.acs.org/Langmuir © 2009 American Chemical Society Spin-Assisted Layer-by-Layer Assembly: Variation of Stratification as Studied with Neutron Reflectivity † Eugenia Kharlampieva, ‡ Veronika Kozlovskaya, ‡ Jennifer Chan, ‡ John F. Ankner, § and Vladimir V. Tsukruk* ,‡ ‡ Department of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, and § Spallation Neutron Source, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 Received April 20, 2009. Revised Manuscript Received June 10, 2009 We apply neutron reflectivity to probe the internal structure of spin-assisted layer-by-layer (SA-LbL) films composed of electrostatically assembled polyelectrolytes. We find that the level of stratification and the degree of layer

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Comparative analysis of GT14/GT14-like family genes in Arabidopsis, Oryza, Populus, Sorghum and Vitis  

SciTech Connect (OSTI)

Glycosyltransferase family14 (GT14) belongs to the glycosyltransferase (GT) superfamily that plays important roles in the biosynthesis of cell walls, the most abundant source of cellulosic biomass for bioethanol production. It has been hypothesized that DUF266 proteins are a new class of GTs related to GT14. In this study, we identified 62 GT14 and 106 DUF266 genes (named GT14-like herein) in Arabidopsis, Oryza, Populus, Sorghum and Vitis. Our phylogenetic analysis separated GT14 and GT14-like genes into two distinct clades, which were further divided into eight and five groups, respectively. Similarities in protein domain, 3D structure and gene expression were uncovered between the two phylogenetic clades, supporting the hypothesis that GT14 and GT14-like genes belong to one family. Therefore, we proposed a new family name, GT14/GT14-like family that combines both subfamilies. Variation in gene expression and protein subcellular localization within the GT14-like subfamily were greater than those within the GT14 subfamily. One-half of the Arabidopsis and Populus GT14/GT14-like genes were found to be preferentially expressed in stem/xylem, indicating that they are likely involved in cell wall biosynthesis. This study provided new insights into the evolution and functional diversification of the GT14/GT14-like family genes.

Ye, Chuyu [ORNL; Li, Ting [ORNL; Tuskan, Gerald A [ORNL; Tschaplinski, Timothy J [ORNL; Yang, Xiaohan [ORNL

2011-01-01T23:59:59.000Z

22

GT-MHR design, performance, and safety  

SciTech Connect (OSTI)

The Gas Turbine-Modular Helium Reactor (GT-MHR) is the result of coupling the evolution of a low power density passively safe modular reactor with key technology developments in the U.S. during the last decade: large industrial gas turbines; large active magnetic bearings; and compact, highly effective plate-fin heat exchangers. This is accomplished through the unique use of the Brayton cycle to produce electricity with the helium as primary coolant from the reactor directly driving the gas turbine electrical generator. This cycle can achieve a high net efficiency in the range of 45% to 48%. In the design of the GT-MHR the desirable inherent characteristics of the inert helium coolant, graphite core, and the coated fuel particles are supplemented with specific design features such as passive heat removal to achieve the safety objective of not disturbing the normal day-to-day activities of the public even for beyond design basis rare accidents. Each GT-MHR plant consists of four modules. The GT-MHR module components are contained within steel pressure vessels: a reactor vessel, a power conversion vessel, and a connecting cross vessel. All vessels are sited underground in a concrete silo, which serves as an independent vented low pressure containment structure. By capitalizing on industrial and aerospace gas turbine development, highly effective heat exchanger designs, and inherent gas cooled reactor temperature characteristics, the passively safe GT-MHR provides a sound technical, monetary, and environmental basis for new nuclear power generating capacity. This paper provides an update on the status of the design, which has been under development on the US-DOE program since February 1993. An assessment of plant performance and safety is also included.

Neylan, A.J.; Shenoy, A.; Silady, F.A.; Dunn, T.D.

1994-11-01T23:59:59.000Z

23

Polarized Structure Function $\\sigma_{LT'}$ for $p({\\vec e},e'K^+)\\Lambda$ in the Nucleon Resonance Region  

SciTech Connect (OSTI)

The first measurements of the polarized structure function $\\sigma_{LT'}$ for the reaction $p(\\vec e,e'K^+)\\Lambda$ in the nucleon resonance region are reported. Measurements are included from threshold up to $W$=2.05 GeV for central values of $Q^2$ of 0.65 and 1.00 GeV$^2$, and nearly the entire kaon center-of-mass angular range. $\\sigma_{LT'}$ is the imaginary part of the longitudinal-transverse response and is expected to be sensitive to interferences between competing intermediate s-channel resonances, as well as resonant and non-resonant processes. The results for $\\sigma_{LT'}$ are comparable in magnitude to previously reported results from CLAS for $\\sigma_{LT}$, the real part of the same response. An intriguing sign change in $\\sigma_{LT'}$ is observed in the high $Q^2$ data at $W\\approx 1.9$ GeV. Comparisons to several existing model predictions are shown.

Nasseripour, Rakhsha; Raue, Brian; Ambrozewicz, Pawel; Carman, Daniel; Amaryan, Moscov; Amaryan, Moskov; Anciant, Eric; Anghinolfi, Marco; Asavapibhop, Burin; Asryan, Gegham; Audit, Gerard; Auger, Thierry; Avagyan, Harutyun; Baghdasaryan, Hovhannes; Baillie, Nathan; Ball, J.P.; Ball, Jacques; Ball, J.P.; Ball, Jacques; Ball, J.P.; Ball, Jacques; Ball, J.P.; Ball, Jacques; Baltzell, Nathan; Barrow, Steve; Battaglieri, Marco; Beard, Kevin; Bedlinskiy, Ivan; Bektasoglu, Mehmet; Bellis, Matthew; Benmouna, Nawal; Berman, Barry; Biselli, Angela; Blaszczyk, Lukasz; Bonner, Billy; Bouchigny, Sylvain; Boyarinov, Sergey; Bradford, Robert; Branford, Derek; Briscoe, William; Brooks, William; Burkert, Volker; Butuceanu, Cornel; Calarco, John; Careccia, Sharon; Casey, Liam; Cetina, Catalina; Chen, Shifeng; Cheng, Lu; Cole, Philip; Collins, Patrick; Coltharp, Philip; Cords, Dieter; Corvisiero, Pietro; Crabb, Donald; Crede, Volker; Dale, Daniel; Dashyan, Natalya; De Masi, Rita; De Vita, Raffaella; De Sanctis, Enzo; Degtiarenko, Pavel; Dennis, Lawrence; Deur, Alexandre; Dhuga, Kalvir; Dickson, Richard; Djalali, Chaden; Dodge, Gail; Doughty, David; Dragovitsch, Peter; Dugger, Michael; Dytman, Steven; Dzyubak, Oleksandr; Egiyan, Hovanes; Egiyan, Kim; Elfassi, Lamiaa; Elouadrhiri, Latifa; Eugenio, Paul; Fatemi, Renee; Fedotov, Gleb; Feldman, Gerald; Feuerbach, Robert; Forest, Tony; Fradi, Ahmed; Funsten, Herbert; Garcon, Michel; Gavalian, Gagik; Gevorgyan, Nerses; Gilfoyle, Gerard; Giovanetti, Kevin; Girard, Pascal; Girod, Francois-Xavier; Goetz, John; Gothe, Ralf; Gothe, Ralf; Griffioen, Keith; Guidal, Michel; Guillo, Matthieu; Guler, Nevzat; Guo, Lei; Gyurjyan, Vardan; Hafidi, Kawtar; Hakobyan, Hayk; Hanretty, Charles; Hardie, John; Heddle, David; Hersman, F.; Hicks, Kenneth; Hleiqawi, Ishaq; Holtrop, Maurik; Hu, Jicun; Hyde, Charles; Ilieva, Yordanka; Ireland, David; Ishkhanov, Boris; Isupov, Evgeny; Ito, Mark; Jenkins, David; Jo, Hyon-Suk; Johnstone, John; Joo, Kyungseon; Juengst, Henry; Kalantarians, Narbe; Kellie, James; Khandaker, Mahbubul; Kim, Kui; Kim, Kyungmo; Kim, Wooyoung; Klein, Andreas; Klein, Franz; Kossov, Mikhail; Krahn, Zebulun; Kramer, Laird; Kubarovsky, Valery; Kuhn, Joachim; Kuhn, Sebastian; Kuleshov, Sergey; Kuznetsov, Viacheslav; Lachniet, Jeff; Laget, Jean; Langheinrich, Jorn; Lawrence, David; Livingston, Kenneth; Lu, Haiyun; Lukashin, Konstantin; MacCormick, Marion; Manak, Joseph; Markov, Nikolai; Mattione, Paul; McAleer, Simeon; McKinnon, Bryan; McNabb, John; Mecking, Bernhard; Mestayer, Mac; Meyer, Curtis; Mibe, Tsutomu; Mikhaylov, Konstantin; Minehart, Ralph; Mirazita, Marco; Miskimen, Rory; Mokeev, Viktor; Moreno, Brahim; Moriya, Kei; Morrow, Steven; Moteabbed, Maryam; Mueller, James; Munevar Espitia, Edwin; Mutchler, Gordon; Nadel-Turonski, Pawel; Niccolai, Silvia; Niculescu, Gabriel; Niculescu, Maria-Ioana; Niczyporuk, Bogdan; Niroula, Megh; Niyazov, Rustam; Nozar, Mina; Osipenko, Mikhail; Ostrovidov, Alexander; Park, Kijun; Pasyuk, Evgueni; Paterson, Craig; Pereira, Sergio; Peterson, Gerald; Philips, Sasha; Pierce, Joshua; Pivnyuk, Nikolay; Pocanic, Dinko; Pogorelko, Oleg; Pozdnyakov, Sergey; Preedom, Barry; Price, John; Procureur, Sebastien; Prok, Yelena; Protopopescu, Dan; Qin, Liming; Riccardi, Gregory; Ricco, Giovanni; Ripani, Marco; Ritchie, Barry; Rosner, Guenther; Rossi, Patrizia; Rubin, Philip; Sabatie, Franck; Salamanca, Julian; Salgado, Carlos; Santoro, Joseph; Sapunenko, Vladimir; Sayre, Donald; Schumacher, Reinhard; Serov, Vladimir; Shafi, Aziz; Sharabian, Youri; Sharov, Dmitri; Shvedunov, Nikolay; Simionatto, Sebastio; Skabelin, Alexander; Smith, Elton; Smith, Lee; Sober, Daniel; Sokhan, Daria; Stavinsky, Aleksey; Stepanyan, Samuel; Stepanyan, Stepan; Stokes, Burnham; Stoler, Paul; Strakovski, Igor; Strauch, Steffen; Taiuti, Mauro; Taylor, Shawn; Tedeschi, David; Thoma, Ulrike; Thompson, Richard; Tkabladze, Avtandil; Tkachenko, Svyatoslav; Ungaro, Maurizio; Vineyard, Michael; Vlassov, Alexander; Wang,

2008-06-01T23:59:59.000Z

24

Transportation Impact Assessment for Shipment of Uranium Hexafluoride (UF&lt;sub>;6&lt;/sub>;) Cylinders from the East Tennessee Technology Park to the Portsmouth and Paducah Gaseous Diffusion  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 2 Transportation Impact Assessment for Shipment of Uranium Hexafluoride (UF 6 ) Cylinders from the East Tennessee Technology Park to the Portsmouth and Paducah Gaseous Diffusion Plants Environmental Assessment Division Argonne National Laboratory Operated by The University of Chicago, under Contract W-31-109-Eng-38, for the United States Department of Energy Argonne National Laboratory Argonne National Laboratory, with facilities in the states of Illinois and Idaho, is owned by the United States Government and operated by The University of Chicago under the provisions of a contract with the Department of Energy. This technical memorandum is a product of Argonne's Environmental Assessment Division (EAD). For information on the division's scientific and engineering

25

GE PowerPoint Template  

Broader source: Energy.gov (indexed) [DOE]

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

26

C-GT16-004-1 Maintenance of Tobacco GT16 Cell Suspension Culture  

E-Print Network [OSTI]

cell line is transgenic BY-2 cell lines expressing Green Fluorescent Protein (GFP) fused with tubulin (Kumagai et al. 2001). Because microtubules can be visualized by using a fluorescence microscope, the GT16 opening (10 ml), and a bulb. III. Preparation of mLS Medium A) Dissolve one bag (1 L) of the MS salt

Fukai, Tomoki

28

GT Environmental Finance LLC | Open Energy Information  

Open Energy Info (EERE)

Environmental Finance LLC Environmental Finance LLC Jump to: navigation, search Name GT Environmental Finance LLC Address 816 Congress Avenue Place Austin, Texas Zip 78701 Sector Services Product Environmental market services provider specializing in transaction and advisory services Website http://www.gtenvfin.com/ Coordinates 30.270601°, -97.74238° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.270601,"lon":-97.74238,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

29

GT Equipment Techologies (Gti) | Open Energy Information  

Open Energy Info (EERE)

Techologies (Gti) Techologies (Gti) Jump to: navigation, search Name GT Solar Address 243 Daniel Webster Highway Place Merrimack, NH Zip 03054 Sector Solar Website http://www.gtsolar.com/index.p Coordinates 42.8317243°, -71.4911473° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.8317243,"lon":-71.4911473,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

30

Measurement of the LT-asymmetry in ?^0 electroproduction at the energy of the ?(1232) resonance  

E-Print Network [OSTI]

The reaction p(e,e'p)pi^0 has been studied at Q^2=0.2 (GeV/c)^2 in the region of W=1232 MeV. From measurements left and right of q, cross section asymmetries \\rho_LT have been obtained in forward kinematics \\rho_LT(\\theta_\\pi^0=20deg) = (-11.68 +/- 2.36_stat +/- 2.36_sys)$ and backward kinematics \\rho_LT(\\theta_\\pi^0=160deg) =(12.18 +/- 0.27_stat +/- 0.82_sys). Multipole ratios \\Re(S_1+^* M_1+)/|M_1+|^2 and \\Re(S_0+^* M_1+)/|M_1+|^2 were determined in the framework of the MAID2003 model. The results are in agreement with older data. The unusally strong negative \\Re(S_0+^* M_1+)/|M_1+|^2 required to bring also the result of Kalleicher et al. in accordance with the rest of the data is almost excluded.

D. Elsner; A. Süle; P. Barneo; P. Bartsch; D. Baumann; J. Bermuth; R. Böhm; D. Bosnar; M. Ding; M. Distler; D. Drechsel; I. Ewald; J. Friedrich; J. M. Friedrich; S. Grözinger; P. Jennewein; S. Kamalov; F. H. Klein; M. Kohl; K. W. Krygier; H. Merkel; P. Merle; U. Müller; R. Neuhausen; Th. Pospischil; M. Potokar; G. Rosner; H. Schmieden; M. Seimetz O. Strähle; L. Tiator; Th. Walcher; M. Weis

2005-07-08T23:59:59.000Z

31

GT40 Utility Pograms and the LISP Display Slave  

E-Print Network [OSTI]

This memo describes two GT40 programs: URUG, an octal micro-debugger: and VT07, a Datapoint simulator and general display package. There is also a description of the MITAI LISP display slave, and how it uses VT07 as a ...

Beeler, Michael

32

GT Repeats Are Associated with Recombination on Human Chromosome 22  

E-Print Network [OSTI]

1998). In humans, the extensive sequencing efforts, accelerated recently by the Genome SequencingGT Repeats Are Associated with Recombination on Human Chromosome 22 Jacek Majewski1 and Jurg Ott by recombination hot spots and cold spots, observed in all organisms ranging from bacteria to humans

Majewski, Jacek

33

PLEASE NOTE: (via Elsbeth Reinhard of GT Incentives Panama)  

E-Print Network [OSTI]

PLEASE NOTE: (via Elsbeth Reinhard of GT Incentives Panama) * Prices within this proposal of the control of Gamboa Tours Panama Inc. ** Please be advised that any activity (i.e., canal transits, fishing, sightseeing boat rides) that is run on or near Canal Operating waters are subject to Panama Canal Authority

Wang, Yuhang

34

Geology of Geothermal Test Hole GT-2 Fenton Hill Site, July 1974...  

Open Energy Info (EERE)

Test Hole GT-2 Fenton Hill Site, July 1974 Jump to: navigation, search OpenEI Reference LibraryAdd to library Report: Geology of Geothermal Test Hole GT-2 Fenton Hill Site, July...

35

STIFFENED SPRINGBACK REFLECTORS L.T. Tan and S. Pellegrino  

E-Print Network [OSTI]

STIFFENED SPRINGBACK REFLECTORS L.T. Tan and S. Pellegrino Department of Engineering, University plastic (CFRP). The whole structure is made as a single piece, without any expensive and potentially the reliability of the system. This paper proposes a modification of the original concept, based on the idea

Pellegrino, Sergio

36

Search for superconductivity of Ag/Ge(100) surface alloys with UHV-LT-STM/STS  

Science Journals Connector (OSTI)

We have been searching novel superconducting materials only at their surface regions using a homemade ultra high vacuum low temperature scanning tunneling microscope. We found that scanning tunneling current-v...

Ken Hattori; Takushi Iimori; Yoshihiro Takahashi…

1996-01-01T23:59:59.000Z

37

Hybrid-Electric Porsche GT3R to Make North American Debut | Department of  

Broader source: Energy.gov (indexed) [DOE]

Hybrid-Electric Porsche GT3R to Make North American Debut Hybrid-Electric Porsche GT3R to Make North American Debut Hybrid-Electric Porsche GT3R to Make North American Debut September 24, 2010 - 4:10pm Addthis The Porsche 911 GT3R will make its North American debut at the Petit Le Mans in Georgia next Saturday. | Department of Energy Image | Photo by Erin Pierce The Porsche 911 GT3R will make its North American debut at the Petit Le Mans in Georgia next Saturday. | Department of Energy Image | Photo by Erin Pierce Paul Lester Communications Specialist for the Office of Energy Efficiency and Renewable Energy What does this mean for me? Petit Le Mans race in Georgia to feature five green vehicles Green Racing Initiative seeks to encourage development of energy efficient vehicles Two 60 kW electric motors part of GT3R's propulsion system

38

Hybrid-Electric Porsche GT3R to Make North American Debut | Department of  

Broader source: Energy.gov (indexed) [DOE]

Hybrid-Electric Porsche GT3R to Make North American Debut Hybrid-Electric Porsche GT3R to Make North American Debut Hybrid-Electric Porsche GT3R to Make North American Debut September 24, 2010 - 4:10pm Addthis The Porsche 911 GT3R will make its North American debut at the Petit Le Mans in Georgia next Saturday. | Department of Energy Image | Photo by Erin Pierce The Porsche 911 GT3R will make its North American debut at the Petit Le Mans in Georgia next Saturday. | Department of Energy Image | Photo by Erin Pierce Paul Lester Communications Specialist for the Office of Energy Efficiency and Renewable Energy What does this mean for me? Petit Le Mans race in Georgia to feature five green vehicles Green Racing Initiative seeks to encourage development of energy efficient vehicles Two 60 kW electric motors part of GT3R's propulsion system

39

ENVIRONMENTAL REVIEW for CATEGORICAL EXCLUSION I&gt;ETERMINATION  

Broader source: Energy.gov (indexed) [DOE]

I>ETERMINATION I&gt;ETERMINATION Rock)' Mountain Region , Western Area Power Administration Mulliplc Structure Replacement Flaming Gorge to Ve rnal No. I 138-kV Transmission Line Uintah Co unty, Utah A. Brief Description of I)roposal: Western Area Powe r Administration (Western) proposes to replace eight (8) wood II-frame structures along the Flaming Gorge-Vernal No. 1 138-kV transmission line. The structures arc located on both private and Bureau of Land Management (BlM) lands in Uintah COUnlY. Utah, as indicated below: 1. Structure 1517 - Tl S. R23E. Section 16. Blair Basin 7.5" USGS quadrangle map 2. Structure 20/5 TIS. R23E, Section 10, Blair Basin 7.5" USGS quadrangle map 3. Structure 31/8 - T3S. R22E, Section 26, Donkey Flat 7.5" USGS quadrangle map

40

P'l&gt;IC_f F2.  

Broader source: Energy.gov (indexed) [DOE]

P'l>IC_f P'l&gt;IC_f F2. p-, . (I!; u.s. DEPARTMENT OF ENERGY EERE PROJECT M ANAG EM EN T CEN T ER NEPA DETERMINATION RECIPIENT:Ohio Department of Development PROJECT TITLE: SEP ARRA * Wooster Renewable Energy Page I of3 ® STATE: OH Funding Opportunity Announcement Number Procurement I.nstrument Number NEPA Control Number elD Number EEQ000165 GFO-OOO0165-023 GOO Based on my review oflbe information concerning the proposed action, as NEPA Compliance Officer (authorlud under DOE Ordcr45I.1A), I have made tbe following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy.efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may inYOlve financial and technical

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While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Microsoft Word - GT2006.90319_f3.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

6 by ASME 6 by ASME Proceedings of ASME Turbo Expo 2006 Power for Land, Sea, and Air May 8-11, 2006, Barcelona, Spain GT2006-90319 ULTRA-LOW NO X ADVANCED VORTEX COMBUSTOR Ryan G. Edmonds, Robert C. Steele ♦ , and Joseph T. Williams Ramgen Power Systems, Inc. Bellevue, Washington 98005 Douglas L. Straub and Kent H. Casleton National Energy Technology Laboratory Morgantown, West Virginia 26507 Avtar Bining California Energy Commission Sacramento, California 95814 ♦ Corresponding Author: rsteele@ramgen.com ABSTRACT An ultra lean-premixed Advanced Vortex Combustor (AVC) has been developed and tested. The natural gas fueled AVC was tested at the U.S. Department of Energy's National Energy

42

Performance evaluations of gyrokinetic Eulerian code GT5D on massively parallel multi-core platforms  

Science Journals Connector (OSTI)

A gyrokinetic toroidal five dimensional Eulerian code GT5D [Y.Idomura et. al., Comput. Phys. Commun 179, 391 (2008)] is ported on five advanced massively parallel platforms and comprehensive benchmark tests are performed. Sustained performances ... Keywords: Eulerian code, GT5D, fusion plasma turbulence, gyrokinetic simulation, hybrid parallel model, sustained performance

Yasuhiro Idomura; Sébastien Jolliet

2011-11-01T23:59:59.000Z

43

Guidelines for Working at Voltages &lt; 240 Volts  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Guidelines for Working at Voltages < 240 Volts Guidelines for Working at Voltages &lt; 240 Volts February 4, 2005---DRAFT NOTE: Working hot is a LAST ALTERNATIVE. Electrical hot work is defined as: Working on or near exposed conducting parts that are or might become energized at 50V or more. Refer to Electrical Safety Flowchart for Working On or Near Live Parts. Engineered methods to prevent exposed sources of 50V and greater are to be implemented wherever practical. Only QUALIFIED PERSONNEL {as defined in NFPA 70E Article 110.6(D) 2004 edition} as authorized by the CAT/supervisor/division can perform such work. Refer to Qualified Electrical Worker Flow Chart. Training requirements: ES&H 114 (LOTO) / ES&H 375 (NFPA 70E) / ES&H 371 (electrical worker) - Observe Electrical Safe Work Practices. Refer to

44

Jersey Central Power & Lt Co | Open Energy Information  

Open Energy Info (EERE)

(Redirected from JCP&L) (Redirected from JCP&L) Jump to: navigation, search Name Jersey Central Power & Lt Co Place Ohio Utility Id 9726 Utility Location Yes Ownership I NERC Location RFC NERC RFC Yes RTO PJM Yes Operates Generating Plant Yes Activity Generation Yes Activity Transmission Yes Activity Buying Transmission Yes Activity Distribution Yes Activity Wholesale Marketing Yes Alt Fuel Vehicle Yes Alt Fuel Vehicle2 Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] Energy Information Administration Form 826[2] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png GS (General Service) Commercial GST (General Service Time-Of-Day) Commercial

45

GT Study Abroad Program Manual, Faculty-Led Study Abroad Programs (FLSA) 1 Office of International Education  

E-Print Network [OSTI]

GT Study Abroad Program Manual, Faculty-Led Study Abroad Programs (FLSA) 1 Office of International the GT Study Abroad Program Manual for Faculty- Led Study Abroad Programs. This document was developed. This document is intended to summarize these policies and procedures as they pertain to GT Faculty-Led Study

Li, Mo

46

Upper Missouri G&T El Coop Inc | Open Energy Information  

Open Energy Info (EERE)

El Coop Inc Jump to: navigation, search Name: Upper Missouri G&T El Coop Inc Place: Montana References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data...

47

Sam Rayburn G&T Elec Coop Inc | Open Energy Information  

Open Energy Info (EERE)

Elec Coop Inc Jump to: navigation, search Name: Sam Rayburn G&T Elec Coop Inc Place: Texas References: EIA Form EIA-861 Final Data File for 2010 - File1a1 EIA Form 861 Data...

48

A thermodynamic study of waste heat recovery from GT-MHR using organic Rankine cycles  

Science Journals Connector (OSTI)

This paper presents an investigation on the utilization of waste heat from a gas turbine-modular helium reactor (GT-MHR) using different arrangements of organic Rankine cycles (ORCs) for power production. The con...

Mortaza Yari; S. M. S. Mahmoudi

2011-02-01T23:59:59.000Z

49

MFV Korenbloem LT 535 sea trials no1: ICES area VIIe  

E-Print Network [OSTI]

MFV Korenbloem LT 535 sea trials no1: ICES area VIIe the results Pete, the Skipper #12;the `new SWFPO #12;discarded fish (all species) reduced by 60% in the Korenbloem new net 0 1000 2000 3000 4000

50

Building | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

51

Energy 32 (2007) 406417 Modeling and control of a SOFC-GT-based autonomous power system  

E-Print Network [OSTI]

, Norway b SINTEF ICT, 7465 Trondheim, Norway c Department of Energy and Process Engineering, NorwegianEnergy 32 (2007) 406­417 Modeling and control of a SOFC-GT-based autonomous power system Rambabu University of Science and Technology, Trondheim, 7491, Norway Received 31 October 2005 Abstract

Foss, Bjarne A.

52

GE Research and Development | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

53

On the Performance of Distributed LT Codes Srinath Puducheri, Jorg Kliewer, and Thomas E. Fuja  

E-Print Network [OSTI]

the data can be transmitted to the sink by effectively using one big MLT code, rather than several small LT Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN 46556, USA Email: {spuduche compared to traditional channel codes is that in a data transmission sce- nario with packet erasures (e

Kliewer, Joerg

54

Working at GE Global Research | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

55

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

56

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

57

Curing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

58

GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

59

GE Healthcare Antibody Purification  

E-Print Network [OSTI]

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

60

LANL &gt;>; GFP Website &gt;>; Home  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LANL GFP Technology LANL GFP Technology About Us Organization GFP Home Uses for GFP Quantifying expression Solubility determination Soluble domain discovery Protein-protein interaction Drug Discovery Licensing Technical Library CONTACTS Technology Contact Geoff Waldo gfp@lanl.gov Licensing Contact David Hadley tmt-1@lanl.gov Green Fluorescent Protein (GFP) Toolbox protein graphic Nobel Prize awarded for GFP Our congratulations to the scientists who won the Nobel Prize for their work on Green Fluorescent Protein. Here is what each one contributed to receive the prize: Osamu Shimomura first isolated GFP from the jellyfish Aequorea victoria, which drifts with the currents off the west coast of North America. He discovered that this protein glowed bright green under ultraviolet light. Martin Chalfie demonstrated the value of GFP as a luminous genetic tag for various biological phenomena. In one of his first experiments, he coloured six individual cells in the transparent roundworm Caenorhabditis elegans with the aid of GFP.

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

GE and Quirky | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

62

Jersey Central Power & Lt Co (New Jersey) | Open Energy Information  

Open Energy Info (EERE)

Co (New Jersey) Co (New Jersey) Jump to: navigation, search Name Jersey Central Power & Lt Co Place New Jersey Utility Id 9726 References EIA Form EIA-861 Final Data File for 2010 - File2_2010[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png No rate schedules available. Average Rates Residential: $0.0523/kWh Commercial: $0.0561/kWh Industrial: $0.1420/kWh References ↑ "EIA Form EIA-861 Final Data File for 2010 - File2_2010" Retrieved from "http://en.openei.org/w/index.php?title=Jersey_Central_Power_%26_Lt_Co_(New_Jersey)&oldid=412648" Categories: EIA Utility Companies and Aliases Utility Companies Organizations Stubs

63

Powering | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

64

Predix | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

65

Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NXRS > Suzanne G.E. te Velthuis NXRS &gt; Suzanne G.E. te Velthuis Suzanne G.E. te Velthuis Physicist Bldg. 223, B-205 Phone 630-252-1075 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Quick Links Selected Publications Selected Invited Talks Present Position Physicist, Materials Science Division, Argonne National Laboratory (2005-Present). Education Ph.D. Degree, Deft University of Technology, The Netherlands (1999). Masters Degree in Applied Physics, Eindhoven University of Technology, The Netherlands (1993). Professional Expirence Assistant Scientist, Materials Science Division, Argonne National Laboratory, (2001-2005). Post-doctoral Scientist, Intense Pulsed Neutron Source, Argonne National Laboratory (1999-2001). Researcher in training (leading to PhD degree), Delft University of Technology, The Netherlands (1994 -1998).

66

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

67

SWAAM-LT: The long-term, sodium/water reaction analysis method computer code  

SciTech Connect (OSTI)

The SWAAM-LT Code, developed for analysis of long-term effects of sodium/water reactions, is discussed. The theoretical formulation of the code is described, including the introduction of system matrices for ease of computer programming as a general system code. Also, some typical results of the code predictions for available large scale tests are presented. Test data for the steam generator design with the cover-gas feature and without the cover-gas feature are available and analyzed. The capabilities and limitations of the code are then discussed in light of the comparison between the code prediction and the test data.

Shin, Y.W.; Chung, H.H.; Wiedermann, A.H. [Argonne National Lab., IL (United States); Tanabe, H. [Power Reactor and Nuclear Fuel Development Corp., Tokai, Ibaraki (Japan)

1993-01-01T23:59:59.000Z

68

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

69

u.s. DEPARTMENT OF ENERGY EERE PROJECT MA-&gt;.IAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

MA->.IAGEMENT CENTER MA-&gt;.IAGEMENT CENTER NEPA DETFRMINATION RECIPIENT;AWS Truepower, LlC Page 1 of2 STATE: NY PROJECT TITLE: National Offshore Wind Energy Resource and Design Data Campaign - Analysis and Collaboration Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CIO Number DE-FOA-0000414 DE-EEOOO5372 GF0-0005372-OO1 0 Based on my review oflhe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4S1.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering, analysis, and dissemination Information gathering (including, but not limited to, literature surveys, inventories, site visits, and audits), data analysis (including, but not limited to, computer modeling), document preparation (including, but not limited to, conceptual design,

70

U.S DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEPA DETER1&gt;IINATION  

Broader source: Energy.gov (indexed) [DOE]

DETER1>IINATION DETER1&gt;IINATION RECIPIENT:Cleveland Stale University PROJECT TITLE: Wnd Spires as an Alternative Energy Source Page 1 01"2 STATE: OH Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number Congressionally Directed DE-FG36-0SG088016 GFO-08-076.()()1 0 Baud on my review orlhe information concerning the proposed action, as NEPA Compliance Officer (authoriud under DOE Order 451. tAl, I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

71

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA&gt;" AGEMENT CENTER NEPA DETERMINATION  

Broader source: Energy.gov (indexed) [DOE]

MA>" AGEMENT CENTER MA&gt;" AGEMENT CENTER NEPA DETERMINATION RECIPIENT:Oregon Department of Energy PROJECT TITLE: Oregon EECBG Fonnula - City of Winston Page I of3 STATE: OR Funding Opportunity Announcement Number DE-FOA-OOOOO13 Procurement Instrument Number NEPA Control Number em Number EEO Based on my review crthe information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 4Sl.I A), I have made the (ollowing determination: ex, EA, EIS APPENDIX AND NUMBER: Description : B1.3 Routine maintenance activities and custodial services for buildings, structures, rights-of-way, infrastructures (e.g .* pathways, roads, and railroads ), vehides and eqUipment, and localized vegetatJon and pest control, dunng which operations may be suspended and resumed. Custodial services are activities to preserve facility appearance, worl

72

Lighting in Commercial Buildings (1986 Data)&gt; -- Publication and Tables  

U.S. Energy Information Administration (EIA) Indexed Site

Executive Summary > Publication and Tables Executive Summary &gt; Publication and Tables Publication and Tables Figure ES1. Ranges of Potential Savings, Maintaining Current Lighting Levels Figure on Ranges of Potential Savings, Maintaining Current Lighting Levels Note: Each shaded band indicates the range of savings estimates obtained, under varying assumptions for the effectiveness of the conservation features considered for each case. The potential savings are shown for each case as a percent of the base case lighting energy estimate (321 billion kilowatthours). Additional savings are possible if lighting levels are reduced. Sources: Adapted from Energy Information Administration, Office of Energy Markets and End Use, Form EIA-871A, "Building Questionnaire" of the 1986 Nonresidential Buildings Energy Consumption Survey; and sources described in Appendices B and C.

73

PI_"&gt;''''. u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

PI_">''''. u.s. DEPARTMENT OF ENERGY PI_"&gt;''''. u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEPADETERMINATION Page 1 of2 RECIPIENT:Oklahoma Municipal Power Authority STATE: OK PROJECT TITLE: OKLAHOMA SEP ARRA - QMPA Large Systems Request AR Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number ell> Number DE-FOA-OOOOO52 DE-EEOOOO133 GFO-OOOO133-070 Based on my review ofthe information cODcerning the proposed action, as NEPA Compliance Officer (authoriud under DOE Order 451 .IA), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: DcS\;ription: 85.1 9 Ground source heat pumps The Installation, modification , operation, and removal of commercially available smaliscale ground source heat pumps to support operations in single facilities (such as a school or community center) or contiguous faci

74

* The far-infrared (λ &gt; 15 µm) is an important  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

infrared (λ > 15 µm) is an important infrared (λ &gt; 15 µm) is an important component of the overall radiation budget of the Earth, accounting for approximately half of the outgoing infrared radiation to space. * Dominated by the pure rotation band of water vapor, the maximum mid-to-upper tropospheric cooling also occurs in the far-IR (left panel). * ARM science team research has resulted in enormous improvements in the treatment of radiation in climate models (e.g. Tobin et al. 1999; right panel). Tropical atmosphere cooling rates calculated using modern LBLRTM calculations(left panel) and differences between current and early ARM (1995/1996) calculations. At the conclusion of the 1997 SHEBA campaign, some spectral differences between Atmospheric Emitted Radiance Interferometer (AERI) measurements and

75

Carousolar | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

76

u.s. DEPARTMENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEPA DETEIU.&lt;UNATION  

Broader source: Energy.gov (indexed) [DOE]

lt;UNATION Page I of2 RECIPIENT:Naviganl Consulting STATE: MA PROJECf TITLE: Offshore Wind Removing Market Barriers Funding Opportunity Announc:ement Number Procurement Instrument Number NEPA Control Number em Number DE-FOA-0000414, topic area 1.1 DE-EEOOO5360 GF()"()()()S360-OO1 0 Based on my review ofthe information concerning the proposed ac:tlon, as NEPA Compliance Officer (authori7-ed under DOE Order 451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Informati on gatherin g, analysis, and dissemination Information gathering (including, but nollimited 10. literature surveys, inventories, site visits, and aUdits). data analysis (induding, but not limited to, computer modeling), document preparation (induding, but not limited to, conceptual design,

77

U.S. DEP.&lt;\RTlVIENT OF ENERGY EERE PROJECT MANAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

<\RTlVIENT OF ENERGY &lt;\RTlVIENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEPA DETERlvIINATION RECIPIENT:Ohio Department of Development STATE: OH PROJECT SEP ARRA - Solid Waste Authority of Central Ohio TITLE: Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number EE0000165 GFO-0000165-017 GOO Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authorized under DOE Order 451.1A), I have made the following determination: CX, EA, EIS APPENDIX AND NUMBER: Description: 85.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

78

Separated cross sections in ?^0 electroproduction at threshold at Q^2 = 0.05 GeV^2/c^2  

E-Print Network [OSTI]

The differential cross sections \\sigma_0=\\sigma_T+\\epsilon \\sigma_L, \\sigma_{LT}, and \\sigma_{TT} of \\pi^0 electroproduction from the proton were measured from threshold up to an additional center of mass energy of 40 MeV, at a value of the photon four-momentum transfer of Q^2= 0.05 GeV^2/c^2 and a center of mass angle of \\theta=90^\\circ. By an additional out-of-plane measurement with polarized electrons \\sigma_{LT'} was determined. This showed for the first time the cusp effect above the \\pi^+ threshold in the imaginary part of the s-wave. The predictions of Heavy Baryon Chiral Perturbation Theory are in disagreement with these data. On the other hand, the data are somewhat better predicted by the MAID phenomenological model and are in good agreement with the dynamical model DMT.

M. Weis; P. Bartsch; D. Baumann; J. Bermuth; A. M. Bernstein; K. Bohinc; R. Böhm; M. Ding; M. O. Distler; I. Ewald; J. M. Friedrich; J. Friedrich; M. Kahrau; M. Kohl; K. W. Krygier; A. Liesenfeld; H. Merkel; P. Merle; U. Müller; R. Neuhausen; M. M. Pavan; Th. Pospischil; M. Potokar; G. Rosner; H. Schmieden; M. Seimetz; S. Širca; A. Wagner; Th. Walcher

2007-05-25T23:59:59.000Z

79

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes…

1993-11-01T23:59:59.000Z

80

Microsoft Word - 40913_SWPC_GT Reheat Insitu Combustion_Factsheet_Rev01_00-00-03.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

0913_SWPC_GT REHEAT INSITU COMBUSTION_FACTSHEET_REV01_00-00-03.DOC 0913_SWPC_GT REHEAT INSITU COMBUSTION_FACTSHEET_REV01_00-00-03.DOC Gas Turbine Reheat Using In-Situ Combustion FACT SHEET I. PROJECT PARTICIPANTS A. Prime Participant: Siemens Westinghouse Power Corp. B. Sub-Award Participant: Texas A&M University II. PROJECT DESCRIPTION A. Objectives: The overall objective of this project is to develop a novel gas reheat concept for gas turbine engines, in which fuel is injected directly into the turbine through one or more stages of vanes and/or blades. The key research goals involved in concept selection are to understand the combustion kinetics (burnout, emissions), blade performance and effects on turbine power output and efficiency. The concept is being evaluated for maximum energy efficiency (full reheat) and as a means to achieve power boost

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81

The gas turbine-modular helium reactor (GT-MHR), high efficiency, cost competitive, nuclear energy for the next century  

SciTech Connect (OSTI)

The Gas Turbine-Modular Helium Reactor (GT-MHR) is the result of coupling the evolution of a small passively safe reactor with key technology developments in the US during the last decade: large industrial gas turbines, large active magnetic bearings, and compact, highly effective plate-fin heat exchangers. The GT-MHR is the only reactor concept which provides a step increase in economic performance combined with increased safety. This is accomplished through its unique utilization of the Brayton cycle to produce electricity directly with the high temperature helium primary coolant from the reactor directly driving the gas turbine electrical generator. This cannot be accomplished with another reactor concept. It retains the high levels of passive safety and the standardized modular design of the steam cycle MHTGR, while showing promise for a significant reduction in power generating costs by increasing plant net efficiency to a remarkable 47%.

Zgliczynski, J.B.; Silady, F.A.; Neylan, A.J.

1994-04-01T23:59:59.000Z

82

Colon Cancer Mapping | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

83

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

84

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams…

2011-01-01T23:59:59.000Z

85

A&lt;ACD6B;GAQ=CD4Q  

Broader source: Energy.gov (indexed) [DOE]

Alt;ACD6B;GAQ=CD4Q =DCA3Q EG7@<9F5Q !' (*$!%), &", %!(#+, HIOKLMJPNMQ :8Q(%,1-Q .WAFTWbe?#Q 9TT@Xe (3* e.AO AW:K e&T[ O"Q- W:OY d  ]L *aA <[YI ^Ae) IWA= YTWe 0T: Oe 4WTF W:M Xe3C >Ae %RS[:Ke2:YITO:Ke+O_IWTONAOY:Ke5TKH=ce %

86

Degradation studies on acid–base blends for both LT and intermediate T fuel cells  

Science Journals Connector (OSTI)

Abstract In this study the ex-situ and in-situ behavior of acid–base blend membranes from sulfonated polyethersulfone and a partially fluorinated sulfonated polymer (prepared by condensation of decafluorobipenyl with bisphenol AF, followed by sulfonation of the obtained polymer) and two different polybenzmidazoles (F6-PBI and PBIOO®) was investigated. Two types of acid–base blend membranes from the abovementioned polymers were prepared and characterized: acid–base blend membranes with a molar excess of acidic blend component for low-T H2 fuel cells (LT-FC) where the proton conductivity is overtaken by the sulfonic acid groups, and blend membranes comprising a molar excess of basic blend component which were subsequently doped with phosphoric acid for the usage in intermediate-T H2 fuel cells (IT-FC) where the network of phosphoric acid molecules in the membrane provides the proton conduction. For elucidation of the radical stability of the membranes, the membranes were subjected to Fenton's Reagent and were operated in a H2-PEMFC. After these tests, the membranes were investigated via SEC for molecular weight degradation. As a result, correlations could be found between degradation of the blend membranes in the fuel cell and after Fenton's test. Moreover, at IT-FC membranes, a correlation could be found between doping degree and fuel cell performance which are discussed in this paper. One of the membranes, a H3PO4-doped base-excess membrane from sPSU and PBIOO showed an excellent performance in an IT-FC at 180 °C of 0.85 A/cm2@0.5 V without pressurization of the reactant gases.

A. Chromik; J.A. Kerres

2013-01-01T23:59:59.000Z

87

U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.&gt;.JAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

, .* !. , .* !. U.S. DEPARTMENT OF ENERGY EERE PROJECT MA.>.JAGEMENT CENTER NEPA DETERMINATION RECIPIENT:Laram!e County Community College PROJECT TITLE: LeGe Ulilty-Scale Wind Energy Technology Page 1 of2 STATE: WY Funding Opportunity Announcement Number Procurement Instrument Number NEPA Control Number CID Number DE-PS36-09G099OO9 DE-EEOOOO538 GFO-10-052 0 Based on my review of the information concerning the proposed action, as Nt:PA Compliance Officer (autbori7.ed under DOE Order 451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathenng (including, but not limited to, literature surveys, Inventones, audits), data analySIS (including computer modeling), document preparation (such as oonceptual des'9n or feasibility studies, analytical energy supply

88

Performance characteristics of a MW-class SOFC/GT hybrid system based on a commercially available gas turbine  

Science Journals Connector (OSTI)

The ultimate purpose of a SOFC/GT hybrid system is for distributed power generation applications. Therefore, this study investigates the possible extension of a SOFC/GT hybrid system to multi-MW power cases. Because of the matured technology of gas turbines and their commercial availability, it was reasonable to construct a hybrid system with an off-the-shelf gas turbine. Based on a commercially available gas turbine, performance analysis was conducted to find the total appropriate power for the hybrid system with consideration of the maximum allowable cell temperature. In order to maintain high performance characteristics of the hybrid system during part-load operations, it was necessary to find the optimal control strategy for the system according to the change in power required. The results of the performance analysis for part-load conditions showed that supplied fuel and air must be changed simultaneously. Furthermore, in order to prevent performance degradation, it was found that both cell temperature and turbine inlet temperature must be maintained as close as possible to design-point conditions.

Tae Won Song; Jeong Lak Sohn; Tong Seop Kim; Sung Tack Ro

2006-01-01T23:59:59.000Z

89

External &gt; Home &gt; Procurement &gt; Contact Information  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Contacts Contacts Barbara J. Jackson, Director Procurement and Contracts Division (865) 576-0795 (865) 576-9188 (Fax) Email: JacksonBJ@oro.doe.gov Major Function: Overall management of Division Acquisitions, Financial Assistance, Small Business Program, Real Estate, Personal Property Freda Hopper Small Business Program Manager (865) 576-9430 (865) 576-9188 (Fax) Email: HopperFH@oro.doe.gov Major Function: Small Business Program Karen Shears, Chief Special Acquisitions Branch (865) 241-6411 (865) 576-3375 (Fax) Email: ShearsKS@oro.doe.gov Major Function: Environmental and Reindustrialization Contracts Robert O. Collins, Chief Acquisition Services Branch (865) 574-0944 (865) 241-2549 (Fax) Email: CollinsRO@oro.doe.gov Major Function: Service Contracts, Procurement Policy, Procurement Support, Simplified Acquisitions

90

Natural Gas Locomotive | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

91

New Medical Technology | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

92

Hospital Sterile Processing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

93

Oil & Gas Technology Center | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

94

GE Innovation and Manufacturing in Europe | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

95

GE Global Research Europe, Munich, Germany | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

96

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

97

u.s. DEPARU&gt;IENT OF ENERGY EERE PROJECT M A NAGEM EN T CENT  

Broader source: Energy.gov (indexed) [DOE]

DEPARU>IENT OF ENERGY DEPARU&gt;IENT OF ENERGY EERE PROJECT M A NAGEM EN T CENT ER NEPA DETERJl.llNATION Page 1 of2 REClPIENT:Bayer MaterialScience LlC STATE: PA PROJECT TITLE: Water - River Devices 10 Recover Energy with Advanced Materials Funding Opportunity Announcement Number DE-FOA-0000293 Procurement Instrument Number DE-EE0004S71 NEPA Control Nu mber GFO-0004571-001 CID Number o Based on my review ofthe information concerning the proposed action, as NEPA Compliance Officer (.authorized under DOE Order451.IA), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: A9 Information gathering (induding, but not limited 10, literature surveys, inventories, audits). data analysis (including computer modeling), document preparation (such as conceptual design or feasibility studies, analytical energy supply

98

RECIPIENT:Pima County U.S. DEPART!&gt;IENT OF ENERGY EERE PROJECT MANAGEMENT CENTER  

Broader source: Energy.gov (indexed) [DOE]

U.S. DEPART!>IENT OF ENERGY U.S. DEPART!&gt;IENT OF ENERGY EERE PROJECT MANAGEMENT CENTER NEPA DETEIUIUNATION PROJECf TITLE: Activity # 10 Administration BLDG. Lighting improvements Page 1 of2 STATE: AZ. Funding Opportunity Announcenlent Number Procurement Instrument Number NEPA Control Number CID Number DE-FOA-QOOD013 DE-EEOO00852 GFO-OOO0852-OO5 0 Based on my review of the information concerning the proposed action, as NEPA Compliance Officer (authoro.ed under DOE Order451.1A), I have made the following determination: ex, EA, EIS APPENDIX AND NUMBER: Description: 65.1 Actions to conserve energy, demonstrate potential energy conservation, and promote energy-efficiency that do not increase the indoor concentrations of potentially harmful substances. These actions may involve financial and technical

99

Exclusive pi^0 electroproduction at W > 2 GeV with CLAS  

SciTech Connect (OSTI)

Exclusive neutral-pion electroproduction (ep-->e'p'pi0) was measured at Jefferson Lab with a 5.75-GeV electron beam and the CLAS detector. Differential cross sections d4sigma/dtdQ2dxBdphipi and structure functions sigmaT+epsilonsigmaL,sigmaTT and ?LT as functions of t were obtained over a wide range of Q2 and xB. The data are compared with Regge and handbag theoretical calculations. Analyses in both frameworks find that a large dominance of transverse processes is necessary to explain the experimental results. For the Regge analysis it is found that the inclusion of vector meson rescattering processes is necessary to bring the magnitude of the calculated and measured structure functions into rough agreement. In the handbag framework, there are two independent calculations, both of which appear to roughly explain the magnitude of the structure functions in terms of transversity generalized parton distributions.

Bedlinskiy, I.; Kubarovsky, V.; Niccolai, S.; Stoler, P.; Adhikari, K.P.; Anderson, M.D.; Pereira, S. Anefalos; Avakian, H.; Ball, J.; Baltzell, N.A.; Battaglieri, M.; Batourine, V.; Biselli, A.S.; Boiarinov, S.; Bono, J.; Briscoe, W.J.; Brooks, W.K.; Burkert, V.D.; Carman, D.S.; Celentano, A.; Chandavar, S.; Colaneri, L.; Cole, P.L.; Contalbrigo, M.; Cortes, O.; Crede, V.; D'Angelo, A.; Dashyan, N.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Doughty, D.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Fleming, J.A.; Forest, T.A.; Garillon, B.; Garcon, M.; Gavalian, G.; Gevorgyan, N.; Ghandilyan, Y.; Gilfoyle, G.P.; Giovanetti, K.L.; Girod, F.X.; Golovatch, E.; Gothe, R.W.; Griffioen, K.A.; Guegan, B.; Guo, L.; Hafidi, K.; Hakobyan, H.; Harrison, N.; Hattawy, M.; Hicks, K.; Holtrop, M.; Ireland, D.G.; Ishkhanov, B.S.; Isupov, E.L.; Jenkins, D.; Jo, H.S.; Joo, K.; Keller, D.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F.J.; Koirala, S.; Kuhn, S.E.; Kuleshov, S.V.; Lenisa, P.; Levine, W.I.; Livingston, K.; Lu, H.Y.; MacGregor, I.J.D.; Markov, N.; Mayer, M.; McKinnon, B.; Mirazita, M.; Mokeev, V.; Montgomery, R.A.; Moody, C.I.; Moutarde, H.; Movsisyan, A; Munoz Camacho, C.; Nadel-Turonski, P.; Niculescu, I.; Osipenko, M.; Ostrovidov, A.I.; Pappalardo, L.L.; Park, K.; Park, S.; Pasyuk, E.; Phelps, E.; Phelps, W.; Phillips, J.J.; Pisano, S.; Pogorelko, O.; Price, J.W.; Prok, Y.; Protopopescu, D.; Procureur, S.; Puckett, A.J.R.; Raue, B.A.; Ripani, M.; Ritchie, B.G.; Rizzo, A.; Rossi, P.; Roy, P.; Sabatié, F.; Salgado, C.; Schott, D.; Schumacher, R.A.; Seder, E.; Senderovich, I.; Sharabian, Y.G.; Simonyan, A.; Smith, G.D.; Sober, D.I.; Sokhan, D.; Stepanyan, S.S.; Strauch, S.; Sytnik, V.; Tang, W.; Tian, Ye; Ungaro, M.; Vlassov, A.V.; Voskanyan, H.; Voutier, E.; Walford, N.K.; Watts, D.; Wei, X.; Weinstein, L.B.; Yurov, M.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z.W.; Zonta, I.

2014-08-01T23:59:59.000Z

100

External &gt; Programs &gt; National Security  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Security Security The National Security mission in Oak Ridge is carried out at the National Nuclear Security Administration's (NNSA) Y-12 National Security Complex, formerly known as the Oak Ridge Y-12 Plant. Programs at Y-12 include manufacturing and reworking nuclear weapon components, dismantling nuclear weapon components returned from the national arsenal, serving as the nation's safe, secure storehouse of special nuclear materials, reducing the global threat from terrorism and weapons of mass destruction, and providing the U.S. Navy with safe, militarily effective nuclear propulsion systems. Y-12 is operated by B&W Y-12 LLC. ORO provides a variety of services to the NNSA's Y-12 Site Office as part of a service agreement between the two organizations.

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

MEMS Relays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

102

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

103

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

104

EE611 Problem Set 4 1. Suppose that the transmitter signal pulse g(t) has duration T and unit energy and the  

E-Print Network [OSTI]

energy and the received signal pulse is h(t) = g(t) + ag(t - T). Determine the equivalent discrete} is AWGN. In the absence of noise, sketch a constellation for the received signal if the transmitted signal constellation is: (a) a binary constellation: +1 and -1. (b) a 4-point constellation: (1, 1), (1, -1), (-1, 1

Bhashyam, Srikrishna

105

Field Testing of Suction Caissons at Bothkennar and Luce Bay G.T. Houlsby, R.B. Kelly, J. Huxtable and B.W. Byrne  

E-Print Network [OSTI]

Field Testing of Suction Caissons at Bothkennar and Luce Bay by G.T. Houlsby, R.B. Kelly, J.T. Houlsby, R.B. Kelly, J. Huxtable and B.W. Byrne This report consists of three papers that have resulted.T., Kelly, R.B., Huxtable, J. and Byrne, B.W. Abstract: A programme of testing of caisson foundations

Byrne, Byron

106

arXiv:1204.3298v2[math.GT]9May2012 ON THE GROWTH OF BETTI NUMBERS IN p-ADIC ANALYTIC  

E-Print Network [OSTI]

arXiv:1204.3298v2[math.GT]9May2012 ON THE GROWTH OF BETTI NUMBERS IN p-ADIC ANALYTIC TOWERS NICOLAS BERGERON, PETER LINNELL, WOLFGANG L¨UCK, AND ROMAN SAUER Abstract. We study the asymptotic growth of Betti and statement of results This paper is mainly concerned with the asymptotic growth of Betti numbers in a tower

Lück, Wolfgang

107

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect (OSTI)

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

108

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

109

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams…

2004-01-01T23:59:59.000Z

110

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams…

2005-01-01T23:59:59.000Z

111

Clean Cities: National Clean Fleets Partner: GE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

112

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

113

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko…

1995-01-01T23:59:59.000Z

114

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

115

Thermodynamic analysis of an SOFC–GT–ORC integrated power system with liquefied natural gas as heat sink  

Science Journals Connector (OSTI)

To recover the waste heat from solid oxide fuel cell (SOFC) and improve the overall electrical efficiency, a new integrated power system driven by SOFC is proposed to achieve the cascade energy utilization. This system integrates an SOFC–GT system with an organic Rankine cycle (ORC) using liquefied natural gas (LNG) as heat sink to recover the cryogenic energy of LNG. Based on the mathematical model, a parametric analysis is conducted to examine the effects of some key thermodynamic parameters on the system performance. The results indicate that the overall electrical efficiency of 67% can be easily achieved for the current system, which can be further improved with parametric optimization. An increase in fuel flow rate of SOFC can raise the net power output, but it has a negative effect on SOFC and overall electrical efficiency. The compressor pressure ratio contributes to an increase in SOFC and overall electrical efficiency, which are contrary to the effects of air flow rate and steam-to-carbon ratio. Under the given conditions, compared with the Kalina sub-system, the ORC sub-system produces 12.6% more power output by utilizing the cryogenic energy of LNG with simple configuration.

Zhequan Yan; Pan Zhao; Jiangfeng Wang; Yiping Dai

2013-01-01T23:59:59.000Z

116

Technology "Relay Race" Against Cancer | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

117

arXiv:1306.4564v1[math.GT]19Jun2013 Bitwist manifolds and two-bridge knots  

E-Print Network [OSTI]

arXiv:1306.4564v1[math.GT]19Jun2013 Bitwist manifolds and two-bridge knots J. W. CANNON W. J. FLOYD, explicit, and simple face-pairing descriptions of all of the branched cyclic covers of S3 branched over two-bridge for F1 , S1 , K+ , and K- 7. Surgery diagrams for the general two-bridge knot 8. Continued Fractions 9

Purcell, Jessica

118

Crowdsourcing Software Award | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

119

Work and Life Balance | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

120

Hauptbewässerungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewässerungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect (OSTI)

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

122

A:&gt;  

Office of Legacy Management (LM)

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123

External &gt; Home &gt; Public Activities &gt; DOE Information Center &gt; New  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

New Documents New Documents Documents Minimize Title Modified Date Size Final Independent Verification Survey Report for Exposure Units Z2-24, Z2-31, Z2-32, and Z2-36 in Zone 2 at ETTP 12/11/2013 3.95 MB Download Groundwater Strategy for the U.S. Department of Energy, Oak Ridge Reservation, Oak Ridge, Tennessee (DOE/OR/01-2628/V1&D1) 12/3/2013 7.26 MB Download Groundwater Strategy for the U.S. Department of Energy, Oak Ridge Reservation, Oak Ridge, Tennessee (DOE/OR/01-2628/V2&D1) 12/3/2013 25.51 MB Download Implementation of Mitigation Action Plan for Parcel ED-1 on the Oak Ridge Reservation (DOE/OR/01-2585) 12/3/2013 5.83 MB Download Semi-Annual Status Report for the Memorandum of Agreement for Interpretation of the ETTP (February 2013 - July 2013) 11/22/2013 3.63 MB Download

124

GE Appliances and Lighting Home Energy Solutions  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

125

A SEARCH FOR L/T TRANSITION DWARFS WITH Pan-STARRS1 AND WISE: DISCOVERY OF SEVEN NEARBY OBJECTS INCLUDING TWO CANDIDATE SPECTROSCOPIC VARIABLES  

SciTech Connect (OSTI)

We present initial results from a wide-field (30,000 deg{sup 2}) search for L/T transition brown dwarfs within 25 pc using the Pan-STARRS1 and Wide-field Infrared Survey Explorer (WISE) surveys. Previous large-area searches have been incomplete for L/T transition dwarfs, because these objects are faint in optical bands and have near-infrared (near-IR) colors that are difficult to distinguish from background stars. To overcome these obstacles, we have cross-matched the Pan-STARRS1 (optical) and WISE (mid-IR) catalogs to produce a unique multi-wavelength database for finding ultracool dwarfs. As part of our initial discoveries, we have identified seven brown dwarfs in the L/T transition within 9-15 pc of the Sun. The L9.5 dwarf PSO J140.2308+45.6487 and the T1.5 dwarf PSO J307.6784+07.8263 (both independently discovered by Mace et al.) show possible spectroscopic variability at the Y and J bands. Two more objects in our sample show evidence of photometric J-band variability, and two others are candidate unresolved binaries based on their spectra. We expect our full search to yield a well-defined, volume-limited sample of L/T transition dwarfs that will include many new targets for study of this complex regime. PSO J307.6784+07.8263 in particular may be an excellent candidate for in-depth study of variability, given its brightness (J = 14.2 mag) and proximity (11 pc)

Best, William M. J.; Liu, Michael C.; Magnier, Eugene A.; Aller, Kimberly M.; Burgett, W. S.; Chambers, K. C.; Hodapp, K. W.; Kaiser, N.; Kudritzki, R.-P.; Morgan, J. S.; Tonry, J. L.; Wainscoat, R. J. [Institute for Astronomy, University of Hawaii at Manoa, Honolulu, HI 96822 (United States); Deacon, Niall R. [Max Planck Institute for Astronomy, Koenigstuhl 17, D-69117 Heidelberg (Germany); Dupuy, Trent J. [Harvard-Smithsonian Center for Astrophysics, 60 Garden Street, Cambridge, MA 02138 (United States); Redstone, Joshua [Facebook, 335 Madison Ave, New York, NY 10017-4677 (United States); Price, P. A., E-mail: wbest@ifa.hawaii.edu [Department of Astrophysical Sciences, Princeton University, Princeton, NJ 08544 (United States)

2013-11-10T23:59:59.000Z

126

DISCOVERY OF FOUR HIGH PROPER MOTION L DWARFS, INCLUDING A 10 pc L DWARF AT THE L/T TRANSITION {sup ,}  

SciTech Connect (OSTI)

We discover four high proper motion L dwarfs by comparing the Wide-field Infrared Survey Explorer (WISE) to the Two Micron All Sky Survey. WISE J140533.32+835030.5 is an L dwarf at the L/T transition with a proper motion of 0.85 ± 0.''02 yr{sup –1}, previously overlooked due to its proximity to a bright star (V ? 12 mag). From optical spectroscopy we find a spectral type of L8, and from moderate-resolution J band spectroscopy we find a near-infrared spectral type of L9. We find WISE J140533.32+835030.5 to have a distance of 9.7 ± 1.7 pc, bringing the number of L dwarfs at the L/T transition within 10 pc from six to seven. WISE J040137.21+284951.7, WISE J040418.01+412735.6, and WISE J062442.37+662625.6 are all early L dwarfs within 25 pc, and were classified using optical and low-resolution near-infrared spectra. WISE J040418.01+412735.6 is an L2 pec (red) dwarf, a member of the class of unusually red L dwarfs. We use follow-up optical and low-resolution near-infrared spectroscopy to classify a previously discovered fifth object WISEP J060738.65+242953.4 as an (L8 Opt/L9 NIR), confirming it as an L dwarf at the L/T transition within 10 pc. WISEP J060738.65+242953.4 shows tentative CH{sub 4} in the H band, possibly the result of unresolved binarity with an early T dwarf, a scenario not supported by binary spectral template fitting. If WISEP J060738.65+242953.4 is a single object, it represents the earliest onset of CH{sub 4} in the H band of an L/T transition dwarf in the SpeX Library. As very late L dwarfs within 10 pc, WISE J140533.32+835030.5 and WISEP J060738.65+242953.4 will play a vital role in resolving outstanding issues at the L/T transition.

Castro, Philip J.; Gizis, John E. [Department of Physics and Astronomy, University of Delaware, Newark, DE 19716 (United States); Harris, Hugh C. [US Naval Observatory, Flagstaff Station, 10391 West Naval Observatory Road, Flagstaff, AZ 86001 (United States); Mace, Gregory N.; McLean, Ian S. [Department of Physics and Astronomy, UCLA, Los Angeles, CA 90095-1547 (United States); Kirkpatrick, J. Davy [Infrared Processing and Analysis Center, MS 100-22, California Institute of Technology, Pasadena, CA 91125 (United States); Pattarakijwanich, Petchara [Department of Astrophysical Sciences, Princeton University, Ivy Lane, Princeton, NJ 08544 (United States); Skrutskie, Michael F., E-mail: pcastro@udel.edu, E-mail: gizis@udel.edu [Department of Astronomy, University of Virginia, Charlottesville, VA 22904 (United States)

2013-10-20T23:59:59.000Z

127

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect (OSTI)

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

128

Ge atom distribution in buried dome islands  

SciTech Connect (OSTI)

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

129

* ^ -^. «*'*: IV: .&lt;:.**  

Gasoline and Diesel Fuel Update (EIA)

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130

Tesis LT.PDF  

Open Energy Info (EERE)

DETERMINACION DE LA IRRADIANCION SOLAR SOBRE EL DETERMINACION DE LA IRRADIANCION SOLAR SOBRE EL TERRITORIO DE CUBA A PARTIR DE IMÁGENES DE SATELITES. Autores: Israel Borrajero Montejo * Lourdes Lavastida** Juan Carlos Pelaez Chavez* Instituto de Meteorología de Cuba La investigación se realizo dentro del acápite relacionado con la radiación solar del Proyecto SWERA para Cuba * Grupo de Radiación Solar del Centro de Física de la Atmósfera del Instituto de Meteorología de Cuba Ministerio de Ciencia Tecnología y Medio Ambiente ** Dpto de Información de Satelites del Centro Nacional de Pronostico Instituto de Meteorología de Cuba Ministerio de Ciencia Tecnología y Medio Ambiente 2 Introducción. El Sol, fuente de vida, es la energía más importante disponible en el planeta y

131

membrane-ge | netl.doe.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

132

Robotic Wind Turbine Inspection | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

133

Advanced Propulsion Systems | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

134

One Young World Summit |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

135

Nanoscale Material Properties | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

136

Happy Pi Day! | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

137

Patricia C. Irwin | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

138

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network [OSTI]

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

139

Ge–Si–O phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400?°C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mücklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

140

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin…

1996-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

142

GE Turbine Parts www.edisonmachine.com  

E-Print Network [OSTI]

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

143

Modeling of GE Appliances: Final Presentation  

SciTech Connect (OSTI)

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

144

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect (OSTI)

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

145

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect (OSTI)

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

146

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect (OSTI)

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

147

Ge-on-Si laser for silicon photonics  

E-Print Network [OSTI]

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

148

Science as Art: Jet Engine Airflow | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

149

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect (OSTI)

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

150

Engineer Receives UMass "Salute To Service" Award | GE Global...  

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GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

151

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect (OSTI)

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

152

Virtual Compton Scattering and the Generalized Polarizabilities of the Proton at Q^2=0.92 and 1.76 GeV^2  

SciTech Connect (OSTI)

Virtual Compton Scattering (VCS) on the proton has been studied at Jefferson Lab using the exclusive photon electroproduction reaction (e p --> e p gamma). This paper gives a detailed account of the analysis which has led to the determination of the structure functions P{sub LL}-P{sub TT}/epsilon and P{sub LT}, and the electric and magnetic generalized polarizabilities (GPs) alpha{sub E}(Q{sup 2}) and beta{sub M}(Q{sup 2}) at values of the four-momentum transfer squared Q{sup 2} = 0.92 and 1.76 GeV{sup 2}. These data, together with the results of VCS experiments at lower momenta, help building a coherent picture of the electric and magnetic GPs of the proton over the full measured Q{sup 2}-range, and point to their non-trivial behavior.

Helene Fonvieille, Geraud Laveissiere, Natalie Degrande, Stephanie Jaminion, Christophe Jutier, Luminita Todor, L. Van Hoorebeke, Bryon Anderson, Konrad Aniol, Kathleen Arundell, Gerard Audit, Leonard Auerbach, F. Baker, Maud Baylac, J. Berthot, Pierre Bertin, William Bertozzi, Louis Bimbot, Werner Boeglin, Edward Brash, Vincent Breton, Herbert Breuer, Etienne Burtin, John Calarco, Lawrence Cardman, Christian Cavata, Jian-Ping Chen, Eugene Chudakov, Evaristo Cisbani, Daniel Dale, Cornelis De Jager, Raffaele De Leo, Alexandre Deur, Nicole D'Hose, Gail Dodge, John Domingo, Latifa Elouadrhiri, Martin Epstein, Lars Ewell, John Finn, Kevin Fissum, Guy Fournier, Bernhard Frois, Salvatore Frullani, Christophe Furget, Haiyan Gao, Juncai Gao, Franco Garibaldi, Ashot Gasparian, Shalev Gilad, Ronald Gilman, Oleksandr Glamazdin, Charles Glashausser, Javier Gomez, Viktor Gorbenko, Pierre Guichon, Jens-Ole Hansen, Richard Holmes, Maurik Holtrop, Calvin Howell, Garth Huber, Charles Hyde, Sebastien Incerti, Mauro Iodice, Johann Jardillier, Mark Jones, Seigo Kato, James Kelly, Armen Ketikyan, Mohammad Khayat, Kouichi Kino, Serge Kox, Laird Kramer, Krishna Kumar, Gerfried Kumbartzki, Michael Kuss, Antonio Leone, John LeRose, Richard Lindgren, Nilanga Liyanage, George Lolos, Kazushige Maeda, Sergey Malov, D. Manley, Claude Marchand, Dominique Marchand, Demetrius Margaziotis, Pete Markowitz, Jacques Marroncle, Jacques Martino, Kathy McCormick, James McIntyre, Surik Mehrabyan, Fernand Merchez, Zein-Eddine Meziani, Robert Michaels, Jean Mougey, Sirish Nanda, Amra Offermann, Zisis Papandreou, Charles Perdrisat, R. Perrino, Gerassimos Petratos, Stephane Platchkov, Roman Pomatsalyuk, David Prout, Vina Punjabi, Thierry Pussieux, Gilles Quemener, Ronald Ransome, Oliver Ravel, Jean-Sebastien Real, Yves Roblin, David Rowntree, Gary Rutledge, Paul Rutt, Arunava Saha, Teijiro Saito, Adam Sarty, Tim Smith, Paul Souder, Riad Suleiman, Jeffrey Templon, Tatsuo Terasawa, Raphael Tieulent, Egle Tomasi, Hiroaki Tsubota, Hiroaki Ueno, Paul Ulmer, Guido Urciuoli, Marc Vanderhaeghen, Rob van der Meer, R.Van De Vyver, Pascal Vernin, Branislav Vlahovic, Hakob Voskanyan, Eric Voutier, John Watson, Lawrence Weinstein, Krishni Wijesooriya, Richard Wilson, Bogdan Wojtsekhowski, Dan Zainea, Zilu Zhou, Rachele Di Salvo

2012-07-01T23:59:59.000Z

153

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lückenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

154

GE_Order_and_Compromise_Agreement.pdf  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

155

12 GeV Upgrade | Jefferson Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

156

Working in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

157

Metal MEMS Devices | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

158

Adam Rasheed | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

159

Air Traffic Operations | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

160

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Andrew Gorton | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

162

GE's Christine Furstoss Named to NACIE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

163

Jie Shen | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

164

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

165

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

166

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

167

GE Opens New Global R&D Center in Brazil - GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

168

JOURNAL DE PHYSIQUE CoZZoque C8, suppZe'ment au n08, Tome 41, aoGt 1980, page C8-156 NEUTRON DIFFRACTION BY LIQUID SEGREGATED COPPER-LEAD ALLOYS  

E-Print Network [OSTI]

38401 Saint Martin drH2res, France. Abstract.- Neutron scattering experiments were performed on liquid corre- .20 is the scattering angle, X the neutron wave- si: 'the modulus of the scatte-lations betweenJOURNAL DE PHYSIQUE CoZZoque C8, suppZe'ment au n08, Tome 41, aoGt 1980, page C8-156 NEUTRON

Boyer, Edmond

169

FAST observations of electron distributions within AKR source G.T. Delory, R.E. Ergun, C.W. Carlson, L. Muschetti, C.C. Chaston, W. Peria, and J.P.  

E-Print Network [OSTI]

1 FAST observations of electron distributions within AKR source regions. G.T. Delory, R.E. Ergun, C the source regions of Auroral Kilometric Radiation (AKR) are reported. In general, the electron data display stabilized by AKR wave growth. The source of the electron instability appears to come from several features

Strangeway, Robert J.

170

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect (OSTI)

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

171

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

172

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

173

New York–Presbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New York–Presbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

174

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

175

Viscosity Measurement G.E. Leblanc  

E-Print Network [OSTI]

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

176

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Broader source: Energy.gov (indexed) [DOE]

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

177

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect (OSTI)

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

178

Silicon Carbides in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

179

The Majorana Ge-76 double-beta decay project  

SciTech Connect (OSTI)

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

180

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect (OSTI)

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

182

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network [OSTI]

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

183

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

184

Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal–oxide–semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Sürgers; J Schulze

2013-01-01T23:59:59.000Z

185

As you may kn&&lt;' the~de&tment of &~er& (D&j 1s involved'in'a pronram  

Office of Legacy Management (LM)

As you may kn&<' the~de&tment of &~er& (D&j 1s involved'in'a pronram As you may kn&&lt;' the~de&tment of &~er& (D&j 1s involved'in'a pronram '. to'chiiracterlze the radjologital cbndif~on of ,sites formerly used byythe . . . ., Manhattan Engineer Dlstrlct (NED) and/or Atomjc Energy Co$n~~lssiqq (AEC); in.. the development of 'nuclear energy.. As part..of this -programi' DOE is 1~ I+ preparing, ,a' series of. brJef~ summaries ,-of .the' history:. of' tho ,#D/AEC~ : : ..; 'i ..relatecl activities and 'Conditions at .thc. sneclfic. sites. The surnaaries~ are to 'document the activities 'frcmi the ~nitlation 'of a contract with' j.'., F:ED/AEC,-to the terminationof the firial.F1EO/AEC contract; The ,historical .: '_ ,,:~,st&naries aIs. briefly' describe the. currant .conditi,on of .each site.

186

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

187

Stable, free-standing Ge nanocrystals  

SciTech Connect (OSTI)

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

188

Melissa Allardyce GT ID# 902536182  

E-Print Network [OSTI]

the necessary chemicals to treat the water and thus allow the business model to be self sustaining! my village for the polytank. Finally we distributed smaller 5 gallon buckets to all the villagers (about 110 households amount of money, clean water for household use! The #12;funds raised allow the women to purchase

Jacobs, Laurence J.

189

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect (OSTI)

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

190

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

191

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect (OSTI)

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

192

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect (OSTI)

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

193

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

194

Über die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16· · 4 H2O bildet sich bei 650°C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwässerung bei 700°C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

195

LtBlue-LessInk  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

public power utilities understand and are confident in the results During the 6 th Plan review process * BPA contracted for measure review - this was useful, but many...

196

LT7484 2..5  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to a magnetic-island width, as may be expected from current transport along magnetic-field lines. It is much larger than that predicted by resistive MHD for linear tearing modes...

197

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

198

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

199

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect (OSTI)

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

200

Biofuel Research at Brazil Center of Excellence | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Meeting Energy Needs in Brazil |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

202

GE Technology to Help Canada Province Meet Growing Energy Needs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

203

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

204

Technology makes reds "pop" in LED displays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

205

Titan propels GE wind turbine research into new territory | ornl...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

206

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect (OSTI)

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

207

 

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MAP NAME="INFORMATIONBAR"> MAP NAME="INFORMATIONBAR"&gt;<;AREA SHAPE="RECT" COORDS="8,1 107,19" HREF="http://www.ornl.gov/hgmis/faq/faqs1.html"&gt;<;AREA SHAPE="RECT" COORDS="128,1 212,19" HREF="http://compbio.ornl.gov/docs/pubs.shtml"&gt;</MAP>; Publications 2003 Quick links: 1990-1999, 2000, 2001, 2002

208

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

209

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

210

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

211

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)×10-13 sec, ?D±=(7.4-2.0+2.3)×10-13 sec and their ratio ?D±?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD¯ component to charm production, consistent with (35±20)% ?c+ production and some D*± production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

212

3 GeV Injector Design Handbook  

SciTech Connect (OSTI)

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

213

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

214

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuous—random-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

215

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

216

GE Nucleus for Residential Energy Use Education, Home Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

217

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

218

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate–oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?°C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?°C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850?°C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

219

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect (OSTI)

Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

220

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 1–2 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network [OSTI]

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

222

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect (OSTI)

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

223

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect (OSTI)

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

224

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; É. A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

225

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network [OSTI]

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mészáros; M. J. Rees

2011-04-26T23:59:59.000Z

226

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect (OSTI)

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

227

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect (OSTI)

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

228

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

229

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

230

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

231

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

232

ORNL Partners with GE on New Hybrid | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

233

Intern Shares Insight Into Researchers' Minds |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

234

A Deep Dive into the Subsea Environment | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

235

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network [OSTI]

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

236

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

237

Ge-on-Si laser operating at room temperature  

E-Print Network [OSTI]

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

238

Helping Astronauts Back on Earth | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

239

Take a Closer Look at the Brain | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

240

Be a part of something bigger than yourself GE Healthcare  

E-Print Network [OSTI]

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Cloud-Based Air Traffic Management Announcement | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

242

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

243

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Broader source: Energy.gov (indexed) [DOE]

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

244

Wind Turbine Transportation in Toyland | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

245

LNG Technology Is in the News | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

246

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

247

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

248

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

249

Pushing Super Materials to the Limit | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

250

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect (OSTI)

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

251

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect (OSTI)

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

252

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect (OSTI)

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

253

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

254

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

255

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

256

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 ± 0.0003, g2 = 2.0386 ± 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012 cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.45–0.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e. not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

257

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

258

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

259

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

260

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

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261

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.3–10 K) and high frequencies (80–210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

262

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect (OSTI)

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

263

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

264

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect (OSTI)

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

265

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

266

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

267

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

268

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network [OSTI]

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

269

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect (OSTI)

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

270

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 40–50 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov…

2004-01-01T23:59:59.000Z

271

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

272

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

273

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

274

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

275

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

276

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network [OSTI]

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

277

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

278

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Broader source: Energy.gov (indexed) [DOE]

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

279

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network [OSTI]

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering –

Shin, Swanee

2009-01-01T23:59:59.000Z

280

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Broader source: Energy.gov [DOE]

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

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281

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

282

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect (OSTI)

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

283

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

284

169Tm Mössbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mössbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

285

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect (OSTI)

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

286

I)ecp-ScaResearch,Vol 25. pp 1121It) 1161 ol)11-747I "s 12(111!21~12I,I I~ [~ergtunol/ PressItd lt)TNPritltedill(;rcat Brilaill  

E-Print Network [OSTI]

assemblage and population densities), and morphological distributions. Proliles from LVFS Stas. 4 to 8 ,, , %.>. ' .¢'j : " CL_j t---. .:.:. AFRICA RmGE /) " 32so,j ~:.- ' L, f,334 33106 ( / 7 ¢ / -20°S ~ [. - 3(Y

Bishop, James K.B.

287

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network [OSTI]

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

288

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

289

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

290

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

291

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect (OSTI)

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

292

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect (OSTI)

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

293

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect (OSTI)

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

294

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect (OSTI)

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

295

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?¯, ?-, ?¯ -, ?0, and ?*±(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?¯, and ?- rates per inelastic event to ?±p data show that ?p rates are consistent with being higher than the ?±p rates, providing evidence of an ss¯ component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?¯, and ??¯ are presented. The xF distributions of the ?, ?¯, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

296

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect (OSTI)

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

297

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect (OSTI)

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

298

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

299

Partners for progress in HVDC: GE and EPRI  

SciTech Connect (OSTI)

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

300

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

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301

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network [OSTI]

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

302

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

303

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect (OSTI)

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

304

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12 h could result in crystallized Ge powder samples that contain ultra-small (5–20 nm) particles and larger (50–100 nm) particles. By controlling the reaction time to 24 h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 10–80 nm and lengths up to 1000 nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e. dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

305

&gt; GC-62 HQS Io002  

Broader source: Energy.gov (indexed) [DOE]

3/01 THI 13:35 FAX CA --- 3/01 THI 13:35 FAX CA --- > GC-62 HQS Io002 Statement of Considerations REQUEST BY 3M FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS IN SUBJECT INVENTIONS MADE IN THE COURSE OF OR SUBCONTRACT NO. 4500011817 UNDER DOE PRIME CONTRACT NO. DE-ACOS- 00OR22725; DOE WAIVER DOCKET W(A)-00-012 [ORO-752] Petitioner, 3M, has made a timely request for an advance waiver to worldwide rights in Subject Inventions made in the course of or under Subcontract No. 4500011817 under DOE Prime Contract DE-AC05-000R22725 with UT-Battelle, LLC. The scope of this work is to produce long (10-100 meter) High Temperature Superconductive (HTS) tapes. HTS tapes will be produced under varying conditions, tested and analyzed. A selection will be made between the ion beam-assisted

306

&gt; FAQs for Survey Form EIA-888  

Gasoline and Diesel Fuel Update (EIA)

88 88 What is the purpose of this survey? The U.S. Energy Information Administration (EIA) Form EIA-888, "On-Highway Diesel Fuel Price Survey," is designed to collect and publish data on the cash price (including taxes) of self-serve, on-highway diesel fuel. The data are used to calculate average diesel fuel oil prices at the national, regional, and select State levels which are vital to the trucking industry and shippers throughout the United States. These data are point-in-time estimates as of 8:00 a.m. Monday. The prices are released every Monday (Tuesday if Monday is a Federal holiday) through DOE's 24-hour telephone hotline at 202-586-6966. These average prices are also published in the Gasoline & Diesel Fuel Update and released electronically to subscribers of EIA's email notification (regular

307

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

308

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

309

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect (OSTI)

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

310

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

311

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect (OSTI)

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

312

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

313

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

314

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect (OSTI)

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

315

School of Civil and Environmental Engineering GE O RGIA IN S TITU TE O F TE CHN O LO GY  

E-Print Network [OSTI]

ENVIRONMENTAL ENGINEERING · Environmental biotechnology · Water quality and treatment · Wastewater reclamation in chemostat vessels. EnvE #12;CEE @ GT EFM&WR ENVIRONMENTAL FLUID MECHANICS & WATER RESOURCES . Science & engineering applications of environmental transport processes . Sustainable resource management . Innovative

Jacobs, Laurence J.

316

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect (OSTI)

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

317

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. O’Dell et al.

1987-07-01T23:59:59.000Z

318

Diamond turning of Si and Ge single crystals  

SciTech Connect (OSTI)

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

319

6 GeV light source project cost estimating procedure  

SciTech Connect (OSTI)

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

320

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect (OSTI)

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

G&lt; TEI-779 MASTER  

Office of Legacy Management (LM)

c*£ c*£ & G< TEI-779 MASTER (fA/L-y-yj. U. S. DEPARTMENT OF THE INTERIOR GEOLOGIC INVESTIGATIONS IN SUPPORT OF PROJECT CHARIOT, PHASE 111, IN THE VICINITY OF CAPE THOMPSON, NORTH- WESTERN ALASKA Preliminary Report By Reuben Kachadoorian Russell H. Campbell George W. Moore David W. Scholl January 1961 Arthur H. Lachenbruch Rex V. Allen Gordon W. Greene Roger M. Waller B. Vaughn Marshall Marvin J. Slaughter David F. Barnes This report is preliminary and has not been edited for con- formity with Geological Survey format and nomenclature. Geological Survey Washington, D. C. Prepared by Geological Survey for the UNITED STATES ATOMIC ENERGY COMMISSION Office of Technical Information L E G A L N O T I C E This report was prepared as an account of Government sponsored work. Neither the United

322

ORNL/RASA-84/LT6  

Office of Legacy Management (LM)

residues exist on this site. The amount of material present is in excess of DOE guide- lines (Table 1). Gamma Radiation Levels Results of the gamma scan of the surface of the...

323

~o-~,",,,,to $V)lt. \\,.,.",,, ,  

E-Print Network [OSTI]

's downtown Atlanta theatre of Andy Warhol's NUDE RESTAU- RANT with Taylor Mead & Viva & a book I had interview with Harry Smith, formed my image of downtown New York life. I dreamed of a movie version. Finally

McCombe, Bruce D.

324

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the Ge–N bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the C–V characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

325

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect (OSTI)

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

326

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

327

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect (OSTI)

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

328

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect (OSTI)

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

329

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect (OSTI)

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

330

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect (OSTI)

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

331

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network [OSTI]

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

332

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

333

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

334

€18.5 Million in New Research Program Funding Announced, GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

335

Using 3D Painting to Build and Repair Parts | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

336

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network [OSTI]

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

337

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect (OSTI)

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

338

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect (OSTI)

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

339

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

340

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect (OSTI)

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

342

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect (OSTI)

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

343

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?°C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02–2 ML s?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s?1 to 9.8 nm at R = 2 ML s?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

344

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect (OSTI)

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

345

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

346

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

347

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect (OSTI)

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

348

Correlation of defect centers with second-harmonic generation in Ge-doped and Ge–P-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; Österberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

349

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

350

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect (OSTI)

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

351

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

352

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network [OSTI]

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

353

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

354

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

355

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network [OSTI]

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

356

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network [OSTI]

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

357

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network [OSTI]

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e(±)X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

358

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

359

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

360

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network [OSTI]

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network [OSTI]

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

362

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network [OSTI]

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

363

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect (OSTI)

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

364

 

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

has not been recalculated for revised atomic masses. In no &lt;Z/A>; has not been recalculated for revised atomic masses. In no application here does it matter, and in any case the changes should not affect a number given to only five places. Nuclear collision and interaction cross sections based on Glauber model are calculated using code by Sergei Striganov (FNAL). Table entries are for 200 GeV/c neutrons. Cross sections are reasonably independent of momentum over this region, as shown in the figure. A picture goes here Click for bigger pdf version Rossi's definition of critical energy is used: It is the energy at which the (negative) electron ionization per radiation length is equal to the electron energy. This is said to give a Moliere radius value more in agreement with experiment than the ionization loss rate = radiative loss

365

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge  

SciTech Connect (OSTI)

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

2012-12-15T23:59:59.000Z

366

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI  

Open Energy Info (EERE)

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified

367

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

368

Titan Propels GE Wind Turbine Research into New Territory | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest

369

VEA-0016 - In the Matter of GE Appliances | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation

370

BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.

371

Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC  

Science Journals Connector (OSTI)

The magnetism of the Mn+1AXn phase, Cr2GeC, and its Mn-doped system, (Cr1?xMnx)2GeC (x?0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, TC, and the spontaneous moment, ps, increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of peff/ps, where peff is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped Cr2GeC can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

Z. Liu; T. Waki; Y. Tabata; H. Nakamura

2014-02-28T23:59:59.000Z

372

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect (OSTI)

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

373

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect (OSTI)

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

374

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

375

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures  

SciTech Connect (OSTI)

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2012-12-10T23:59:59.000Z

376

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect (OSTI)

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z

377

Nanoporosity induced by ion implantation in deposited amorphous Ge thin films  

SciTech Connect (OSTI)

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

2012-06-01T23:59:59.000Z

378

MIT Plasma Science & Fusion Center: research&gt;alcator>;  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Physics Research Physics Research High-Energy- Density Physics Waves & Beams Technology & Engineering Useful Links earl marmar head of alcator reviewing data Dr. Earl Marmar, leader of the Alcator Project, studies C-Mod data. Today, we are closer than ever to realizing the dream of harnessing the nuclear process that powers our sun. This stellar process, called fusion, produces minimal waste and offers the hope of an almost limitless supply of safe, dependable energy. Among fusion research groups, MIT's Alcator C-Mod project is unique in its dedication to compact size and high performance. It is the world's highest magnetic field tokamak plasma confinement experiment. As a result, Alcator experiments have performed at levels rivaling the largest fusion experiments in the world.

379

MIT Plasma Science & Fusion Center: research&gt;alcator>;facility info  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Density Physics Waves & Beams Technology & Engineering Useful Links Alcator C-Mod Criteria for Design of Vacuum Components This document is meant to be a guideline for design and construction of components that interface with the CMOD vacuum system. It does not intend to cover all situations but instead is designed to start one thinking about the problems encountered in constructing a successful device that will operate in the Alcator vacuum environment without causing any unwanted effect on the quality of that vacuum. Material Selection The Alcator vacuum vessel is made from 304L SS, as are most of the support devices and diagnostic assemblies in the vacuum. Other than Molybdenum on the limiters and in the divertor, this is the predominate material used in

380

MIT Plasma Science & Fusion Center: research&gt;alcator>;research program  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

& Program Information & Program Information Publications & News Meetings & Seminars Contact Information Physics Research High-Energy- Density Physics Waves & Beams Fusion Technology & Engineering Plasma Technology Useful Links Collaborations at Alcator C-Mod Collaborations form an integral and important part of the Alcator C-Mod research effort. Among the major facilities, C-Mod has a relatively small scientific staff, and collaborations provide a high leverage avenue to increase our productivity. Opportunities for collaboration can be found across the entire spectrum of our research activities. Education is a primary mission of MIT, and we particularly welcome and encourage student participation in our program. The Alcator program is centered around the overall theme of: Compact

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381

MIT Plasma Science & Fusion Center: research&gt;alcator>;introduction  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Program Program Information Publications & News Meetings & Seminars Contact Information Physics Research Fusion Technology & Engineering Plasma Technology Waves & Beams Useful Links Quarterly Review, Thursday, July 14, 2005 10:00 Steve Wolfe: Status of the run campaign, and research operations weeks JOULE target 10:15 Yijun Lin: Status of "all metal wall" JOULE target 10:30 Ron Parker: Lower Hybrid status 10:45 Jim Irby: Cryopump status 10:55 Bob Granetz: DNB status 11:05 Bob Granetz: Disruption mitigation by massive gas puff -- experiments and plans 11:15 Brian LaBombard: Rotation and H-mode scrape-off layer flows, the role of the X-point and connections to the L-H power threshold in Alcator C-Mod 77 Massachusetts Avenue, NW16, Cambridge, MA 02139, info@psfc.mit.edu

382

MIT Plasma Science & Fusion Center: research&gt;alcator>;Conference Room  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Density Physics Density Physics Waves & Beams Technology & Engineering Useful Links Conference Rooms The PSFC is using google apps for education to support calendars for shared resources. There are currently two calendars implemented. One for the Alcator C-Mod Run Schedule, and one to schedule the NW17-132 conference room. These links will display read only views of the calendars. In order to schedule the conference room visit your personal psfc calendar as described below. In order to view these calendars you must be signed in to the g-apps.psfc.mit.edu domain. When prompted by https://sso.psfc.mit.edu/ for a username and password, enter your PSFC login credentials. After you authenticate for the first time, you get a screen which asks you to accept new account. Note that: THIS IS DIFFERENT AND SEPARATE FROM YOUR OTHER GOOGLE

383

MIT Plasma Science & Fusion Center: research&gt; alcator&gt;tokamak data &  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ALCATOR C-Mod ALCATOR C-Mod Alcator Introduction Facility Information Tokamak Data & Real-Time Information Computer & Data Systems Research Program Information Publications & News Meetings & Seminars Contact Information Physics Research High-Energy- Density Physics Waves & Beams Technology & Engineering Useful Links Tokamak Data & Real-time Information Shot cycle display Web cameras Live video and audio from the control room - coming soon Network AC Power Switches (Authorized access only) Compact PCI Acquisition Hardware status (Local access only) Data from latest shot Logbook (Authorized access only) Engineering status Cryo Report Heat Report Torvac Report RGA Report Glow Discharge Report Engineering Reports Signals table lookup Descriptions of the signals stored in the C-Mod data set. Names, Units,

384

Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method  

Science Journals Connector (OSTI)

This paper presents a theoretical study of Si and Ge atom dangling bond defects in a-Si,Ge alloys. We use a tight-binding Hamiltonian, and a structural model based on a cluster Bethe Lattice. The central clust...

S. Y. Lin; G. Lucovsky

1985-01-01T23:59:59.000Z

385

A Systematic Investigation of the Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System  

Science Journals Connector (OSTI)

Nb3Ge films were prepared by coevaporation of Nb and Ge from two sources under well defined and controlled conditions. We have studied the formation of the A15 phase by varying the processing parameters-compositi...

H. U. Habermeier; P. Chaudhari

1981-01-01T23:59:59.000Z

386

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

387

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe  

Science Journals Connector (OSTI)

Abstract The disilane (Si2H6) + germane (GeH4) chemistry has been evaluated for the reduced pressure (2660 Pa, i.e. 20 Torr), low temperature growth of intrinsic and heavily boron-doped SiGe. A SiGe growth rate “plateau” has been evidenced between 650 °C and 750 °C. Meanwhile, the Ge concentration x was rather steady in the 500 °C–700 °C range. A linear increase of the SiGe growth rate with the GeH4 flow occurred at 500 °C, 550 °C and 675 °C. The increase of x with the GeH4 mass-flow otherwise changed from linear to sub-linear as the growth temperature was reduced from 675 °C down to 500 °C–550 °C. Be it with Si2H6 or SiH4, the SiGe growth rate fell by a factor of ~ 7–8 when switching from 550 °C to 500 °C. For the same x, growth rate was nevertheless 3–9 times higher with Si2H6 than with SiH4. We have also studied the impact of B2H6 on the 500 °C growth kinetics of SiGe with Si2H6. Large substitutional boron concentrations were obtained in single-crystalline SiGe:B layers: [B]subst. ~ 3.7 × 1020 cm?3. Surface B atoms otherwise catalysed H desorption, resulting in growth rates ~ 5 times higher for SiGe:B than for intrinsic SiGe. Finally, a monotonic decrease of the SiGe(:B) growth rate together with a significant increase of the Ge concentration were evidenced at 500 °C and 675 °C when adding \\{HCl\\} to the gaseous mixture. At 500 °C, SiGe:B growth rates still stayed 3 times higher than the intrinsic SiGe ones. Adding \\{HCl\\} had otherwise no clear impact on [B]subst.

J.M. Hartmann; V. Benevent; M. Veillerot; A. Halimaoui

2014-01-01T23:59:59.000Z

388

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV  

E-Print Network [OSTI]

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV

Coet, P

1975-01-01T23:59:59.000Z

389

Evolution of surface roughness in epitaxial Si{sub 0.7}Ge{sub 0.3}(001) as a function of growth temperature (200{endash}600{degree}C) and Si(001) substrate miscut  

SciTech Connect (OSTI)

Evolution of surface roughness in epitaxial Si{sub 0.7}Ge{sub 0.3} alloys grown on Si(001) as a function of temperature (200-600 C), thickness ({ital t}=7.5-100 nm), and substrate miscut were investigated by atomic force microscopy and quantified in terms of the height-difference correlation function {ital G}({rho}), in which {rho} is lateral distance and [{ital G}({rho}{r_arrow}{infinity})]{sup 1/2} is proportional to the surface width. The films were deposited by ultrahigh vacuum ion-beam sputter deposition at 0.1 nms{sup {minus}1}. Strain-induced surface roughening was found to dominate in alloys grown on singular Si(001) substrates at {ital T}{sub {ital s}}{approx_gt}450{degree}C where [{ital G}({rho}{r_arrow}{infinity})]{sup 1/2} initially increases with increasing {ital t} through the formation of coherent islanding. The islands are preferentially bounded along {l_angle}100{r_angle} directions and exhibit 105 faceting. This tendency is enhanced, with much better developed {l_angle}100{r_angle} islands separated by deep trenches{emdash}of interest for growth of self-assembled nanostructures{emdash}in films grown on Si(001)-4{degree}[100]. Increasing the film thickness above critical values for strain relaxation leads to island coalescence and surface smoothening. At very low growth temperatures ({ital T}{sub {ital s}}{le}250{degree}C), film surfaces roughen kinetically, due to limited adatom diffusivity, but at far lower rates than in the higher-temperature strain-induced regime. Si{sub 0.7}Ge{sub 0.3} alloy surfaces are smoother, while the films exhibit larger critical epitaxial thicknesses, than those of pure Si films grown in this temperature regime. There is an intermediate growth temperature range, however, over which the alloy film surfaces remain extremely smooth even at thicknesses near critical values for strain relaxation. This latter result is of potential importance for device fabrication. {copyright} {ital 1996 American Institute of Physics.}

Lee, N.; Cahill, D.G.; Greene, J.E. [Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)] [Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)

1996-08-01T23:59:59.000Z

390

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar  

E-Print Network [OSTI]

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited in the suboxide on the GeNW, whose germanium- enrichment surface was obtained to form a germanide contact at low

Jo, Moon-Ho

391

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced  

E-Print Network [OSTI]

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced one-step route was developed to synthesize crystalline CuGeO3 nanowire/graphene composites (CGCs). Crystalline CuGeO3 nanowires were tightly covered and anchored by graphene sheets, forming a layered structure

Lin, Zhiqun

392

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires  

Science Journals Connector (OSTI)

We experimentally studied the thermoelectric power factor of hole gas in individual Ge–Si core–shell nanowires with Ge core diameters ranging from 11 to 25 nm. The Ge cores are dopant-free, but the Fermi level in the cores is pinned by surface and defect ...

Jaeyun Moon; Ji-Hun Kim; Zack C.Y. Chen; Jie Xiang; Renkun Chen

2013-02-08T23:59:59.000Z

393

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001)  

E-Print Network [OSTI]

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001) Cristian V that dimer- vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(0 0 1), but not on Ge(0 0 1 the vacancies on Si(0 0 1) and Ge(0 0 1). We identify three energetic parameters which characterize the DVs

Ciobanu, Cristian

394

Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions  

SciTech Connect (OSTI)

We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed by annealing in a vacuum at 500 C. In these conditions, the MgO layer grows epitaxially on Ge(001) with the [110] direction parallel to the [100] direction of Ge, at variance with the cube-on-cube growth on Si(001) and GaAs(001). However, in some cases, the cube-on-cube growth mode of MgO on Ge competes with the mode involving a 45{sup o} rotation, as revealed by transmission electron microscopy and photoelectron diffraction data on MgO films grown at 300 C without postannealing, and on p-doped Ge substrates. For the Fe overlayer, in all the cases reported, room temperature growth followed by annealing up to 200 C gives rise to a sharp interface and the well-known 45{sup o} rotation of the Fe lattice with respect to the MgO lattice.

Petti, D. [Politecnico di Milano; Cantoni, M. [Politecnico di Milano; Rinaldi, C. [Politecnico di Milano; Brivio, S. [Politecnico di Milano; Bertacco, R. [Politecnico di Milano; Gazquez Alabart, Jaume [ORNL; Varela del Arco, Maria [ORNL

2011-01-01T23:59:59.000Z

395

Structure determination of Ag-Ge-S glasses using neutron diffraction  

Science Journals Connector (OSTI)

The structure of the superionic glass system (Ag2S)x(GeS2)1-x, for three compositions x=0.3, 0.4, 0.5, has been studied using neutron diffraction, and isotopic-substitution neutron-diffraction experiments have been performed on three silver isotope-substituted (107Ag,natAg,109Ag) samples of the composition (Ag2S)0.5(GeS2)0.5. The average short-range orderings of Ge-S, Ag-S, and Ge-Ag correlations were identified in the radial distribution functions for the isotopically substituted system of (Ag2S)0.5(GeS2)0.5. From the first and second differences in the three sets of isotopic-substitution neutron-diffraction data, the other three partial correlations (Ag-Ag, Ge-Ge, and S-S), were also identified. By examining unusually broad peaks in the Ag-Ag correlation function, it was concluded that the Ag-Ag distribution was rather homogeneous. We were also able to obtain further information by combining the first and second difference analyses, resulting in a structural model of a slightly elongated GeS4 tetrahedron with the local environment of Ag+ ions being threefold coordination by nonbridging sulphur ions. The medium-range order of the host framework was found to be a chainlike structure of linked corner-sharing GeS4 tetrahedra. Substantial changes in the first and second peaks in the distinct scattering functions i(Q) were found with composition and also with isotopic substitution. It was possible to explain the trends in the changes of the heights of these peaks in the structure factor by applying the void model for the first sharp diffraction peak. © 1996 The American Physical Society.

J. H. Lee; A. P. Owens; A. Pradel; A. C. Hannon; M. Ribes; S. R. Elliott

1996-08-01T23:59:59.000Z

396

Wide-band neutrino beams at 1000 GeV  

SciTech Connect (OSTI)

In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train. (WHK)

Malensek, A.; Stutte, L.

1983-04-11T23:59:59.000Z

397

Exotic decays of the 125 GeV Higgs boson  

Science Journals Connector (OSTI)

We perform an extensive survey of nonstandard Higgs decays that are consistent with the 125 GeV Higgs-like resonance. Our aim is to motivate a large set of new experimental analyses on the existing and forthcoming data from the Large Hadron Collider (LHC). The explicit search for exotic Higgs decays presents a largely untapped discovery opportunity for the LHC collaborations, as such decays may be easily missed by other searches. We emphasize that the Higgs is uniquely sensitive to the potential existence of new weakly coupled particles and provide a unified discussion of a large class of both simplified and complete models that give rise to characteristic patterns of exotic Higgs decays. We assess the status of exotic Higgs decays after LHC run I. In many cases we are able to set new nontrivial constraints by reinterpreting existing experimental analyses. We point out that improvements are possible with dedicated analyses and perform some preliminary collider studies. We prioritize the analyses according to their theoretical motivation and their experimental feasibility. This document is accompanied by a Web site that will be continuously updated with further information [http://exotichiggs.physics.sunysb.edu].

David Curtin; Rouven Essig; Stefania Gori; Prerit Jaiswal; Andrey Katz; Tao Liu; Zhen Liu; David McKeen; Jessie Shelton; Matthew Strassler; Ze’ev Surujon; Brock Tweedie; Yi-Ming Zhong

2014-10-13T23:59:59.000Z

398

Potential improvements in SiGe radioisotope thermoelectric generator performance  

SciTech Connect (OSTI)

In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

Mowery, A.L. [4 Myrtle Bank Lane, Hilton Head Island, South Carolina, 29926-2650 (United States)

1999-01-01T23:59:59.000Z

399

APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE  

SciTech Connect (OSTI)

A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

2001-01-01T23:59:59.000Z

400

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect (OSTI)

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Low-temperature recrystallization of Ge nanolayers on ZnSe  

SciTech Connect (OSTI)

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru; Fedosenko, E. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2007-05-15T23:59:59.000Z

402

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method  

SciTech Connect (OSTI)

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 ? cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)] [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)] [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

2013-10-21T23:59:59.000Z

403

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.  

Office of Science (SC) Website

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » July 2013 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists at University of Texas, Austin, accelerate electrons to 2 GeV in table top apparatus. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Neil Fazel The inside of the University of Texas, Austin, vacuum chamber where

404

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher

405

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Broader source: Energy.gov (indexed) [DOE]

Secretary Chu to Tour GE Global Research Advanced Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

406

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Broader source: Energy.gov (indexed) [DOE]

Tour GE Global Research Advanced Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

407

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado  

Broader source: Energy.gov (indexed) [DOE]

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's

408

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Broader source: Energy.gov (indexed) [DOE]

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

409

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY (GE) FOR AN  

Broader source: Energy.gov (indexed) [DOE]

(GE) FOR AN (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS TO INVENTIONS MADE UNDER COOPERATIVE AGREEMENT NUMBER DE-FC04-2002AL68080, DOE WAIVER NO. W(A) 03-003. The Petitioner, GE, has requested a waiver of all domestic and foreign patent rights to inventions that may be conceived or first actually reduced to practice in the course of GE's work under Cooperative Agreement Number DE-FC04-2002AL68080 entitled "Advanced Hybrid Propulsion and Energy Management System for High Efficiency, Off- Highway, 320 Ton Class, Diesel Electric Haul Trucks." The work to be done under the cooperative agreement will be the design, fabrication and demonstration of a hybrid propulsion and energy management system for off-highway vehicles used in mining applications. The hybrid propulsion system would allow for an

410

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Broader source: Energy.gov (indexed) [DOE]

181 BETWEEN GE GLOBAL AND 181 BETWEEN GE GLOBAL AND DOE; W(A)-09-016; CH-1485 The Petitioner, GE GLOBAL, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE GLOBAL arising from its participation under the above referenced cooperative agreement entitled "300°c Capable Electronics Platform and Temperature Sensor System for Enhanced Geothermal Systems." The objective of the project is development of geothermal well bore monitoring applications, through the development of SiC based electronics and ceramic packaging capable of sustained operation at temperatures up to 300°C and 10km depth. The total cost of the project is approximately $2 million with the Petitioner

411

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

412

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56 MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

413

Theoretical study of the thermoelectric properties of SiGe nanotubes  

E-Print Network [OSTI]

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube.

Wei, J; Tan, X J; Cheng, L; Zhang, J; Fan, D D; Shi, J; Tang, X F

2014-01-01T23:59:59.000Z

414

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition  

Science Journals Connector (OSTI)

Effects of ion energy on the optical, microstructure, and electrical properties of Ge films prepared by ion-beam-assisted deposition were investigated. The absorption edge is found to...

Leng, Jian; Zhao, Li; Ji, Yiqin; Liu, Huasong; Zhuang, Kewen

2014-01-01T23:59:59.000Z

415

5 Top Trends From the Women and Technology Symposium | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

disciplines. So this year, we wanted to take it to the next level. Why not leverage our "Mini-GE" (Chairmen Jeff Immelt's nickname for our India technology center), where all of...

416

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

417

Natural SnGeS3 from Radvanice near Trutnov (Czech Republic) :  

Science Journals Connector (OSTI)

...diffractometer HZG4/TuR (CuKalpha radiation, stepscanning). To minimize...graphite monochromatized MoKalpha-radiation. Data collection parameters...zaoek Ondurs, P. (1997): Naturally occuring germanium compounds, GeSnS3...

Jiri SEJKORA; Peter BERLEPSCH; Emil MAKOVICKY; Tonci BALI?-ZUNI?

418

Particle production models in HETC88 in the energy range 3 to 30 GeV  

SciTech Connect (OSTI)

HETC88 is the latest version of the high-energy transport code HETC that has been used to provide accelerator shield and calorimeter design data for many years. (See Refs. 3, 4, and 5 and the refs. given therein). This version of the code is described and results are compared with experimental data in Ref. 1. The high-energy particle production model in HETC88 is a multi-chain fragmentation model based on the work of J. Ranft and S. Ritter (see Ref. 6 and the refs. given therein). The fragmentation model used in HETC88 is described and compared with experimental data. In HETC88, the fragmentation model is used at energies {ge} 5 GeV, a scaling model is used in energy range 3 to 5 GeV, and the intranuclear cascade model is used at energies {le} 3 GeV. 10 refs., 1 fig.

Alsmiller, R.G. Jr.; Alsmiller, F.S.

1991-01-01T23:59:59.000Z

419

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network [OSTI]

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

420

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network [OSTI]

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...

Sun, Xiaochen

422

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

423

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network [OSTI]

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than ...

Jifeng, Liu

424

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network [OSTI]

We report a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8 GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction ...

Conrad, Janet

425

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

E-Print Network [OSTI]

Li, A. P. et al. Magnetism in Mn x Ge 1-x semiconductorsElectronic Structure and Magnetism for Mn in Amorphous Sistructure that determines magnetism. Figure 3 shows XAS data

Zeng, Li

2010-01-01T23:59:59.000Z

426

Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism  

SciTech Connect (OSTI)

Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2013-02-21T23:59:59.000Z

427

Pushing the Performance Limits of SiGe HBTTechnology Marwan Khatera  

E-Print Network [OSTI]

noise, device matching,and power performance.The performance evolution ofSiGe HBT technologyin recent. ECS Transactions, 3 (7) 341-353 (2006) 10.1149/1.2355832, copyright The Electrochemical Society 341

Rieh, Jae-Sung

428

Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations  

Science Journals Connector (OSTI)

The electronic structure of Ge/RbF/GaAs(100) system ... known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. ... obtained results, compared with those of...

Barbara Stankiewicz

429

Investigation of lateral gated quantum devices in Si/SiGe heterostructures  

E-Print Network [OSTI]

Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

Lai, Andrew P. (Andrew Pan)

2013-01-01T23:59:59.000Z

430

Super-Resolution ROM Disc Using GeAl Reflective Absorption Layer  

Science Journals Connector (OSTI)

We have developed a super-resolution ROM disc using a newly designed GeAl reflective absorption layer. The optical resolution limit in high readout power expanded more than 1.5 times...

Aoki, Kazuhiko; Tanabe, Hideki; Ohkubo, Shuichi; Kariyada, Eiji; Katayama, Ryuichi; Yamanaka, Yutaka

431

Optical gain and lasing from band-engineered Ge-on-Si at room temperature  

E-Print Network [OSTI]

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale ...

Liu, Jifeng

432

Black GE based on crystalline/amorphous core/shell nanoneedle arrays  

SciTech Connect (OSTI)

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

2014-03-04T23:59:59.000Z

433

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications  

SciTech Connect (OSTI)

Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge{sup 4+} state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.

Ito, Toshihide; Mitani, Yuuichiro; Nakasaki, Yasushi; Koike, Masahiro [Corporate Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582 (Japan); Konno, Takuya; Matsuba, Hiroshi [Corporate Manufacturing Engineering Center, Toshiba Corporation, Isogo-ku, Yokohama 235-0017 (Japan); Kai, Tetsuya; Kaneko, Wakana; Ozawa, Yoshio [Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, Isogo-ku, Yokohama 235-8522 (Japan)

2012-02-13T23:59:59.000Z

434

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates  

SciTech Connect (OSTI)

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barrier 0.9 eV was obtained.

Novikov, P. L.; Smagina, J. V.; Vlasov, D. Yu.; Deryabin, A. S.; Kozhukhov, A. S.; Dvurechenskii, A. V. [Institute of Semiconductor Physics SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk (Russian Federation)

2011-12-23T23:59:59.000Z

435

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Single crystal epitaxial Ge{sub 1?x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1?x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1?x}Sn{sub x} alloys versus the composition of Sn have been determined.

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Wielunski, Leszek [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

2013-07-22T23:59:59.000Z

436

Structure of the novel ternary hydrides Li4Tt2D (Tt = Si and Ge)  

Science Journals Connector (OSTI)

The crystal structures of novel Li4Tt2D (Tt = Si and Ge) ternary hydrides were solved using neutron powder diffraction data. All hydrogen atoms were found to occupy Li6-octahedral interstices.

Wu, H.

2007-01-15T23:59:59.000Z

437

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser  

SciTech Connect (OSTI)

Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO{sub 2} and Ge-doped SiO{sub 2}. The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO{sub 2}. The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 {+-} 5 fs) when compared to pure silica (155 {+-} 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica.

Lancry, M.; Poumellec, B. [LPCES/ICMMO, UMR CNRS-UPS 8182, Universite Paris Sud 11, Batiment 410, 91405 Orsay (France); Groothoff, N.; Canning, J. [Interdisciplinary Photonics Laboratories, School of Chemistry, University of Sydney, 206 NIC, ATP, Eveleigh, NSW, 1340 (Australia); Guizard, S.; Fedorov, N. [Laboratoire des Solides Irradies/CEA IRAMIS, Ecole Polytechnique, Palaiseau (France)

2011-12-15T23:59:59.000Z

438

New Global Oil & Gas Hub in Oklahoma City | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation GE Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation New Center to...

439

OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng  

E-Print Network [OSTI]

at the University of Toledo (UT) in the fabrication of high-efficiency triple, tandem and single-junction solar with 12.5% initial efficiency and 10.7% stable efficiency, tandem-junction a-Si/a-SiGe solar cells with 12.9% initial efficiency, and single-junction a-SiGe solar cells with 12.5-13% initial efficiency and 10

Deng, Xunming

440

In-beam measurement of E0 matrix element in Se72 and Ge72  

Science Journals Connector (OSTI)

A 0 + state in Se72 at 936 keV has been identified through in-beam measurements with Ge70(?,2n)Se72. The beam-related time distribution of conversion electrons from the 936-keV E0 transition yields a half-life of 19.3±0.4 ns. With a Ge72 target and an ?-beam sweeper the half-life of the 690-keV E0 transition in Ge72 was 404±45 ns. For both transitions identification of the emitting nucleus was obtained from the energy separation of the K and L electrons. The KL intensity ratio was intermediate between the theoretical results of Hager and Seltzer and those of Church and Weneser. The reduced E0 nuclear matrix elements are ?=(0.304±0.003)(1-5.01×10-3f) and ?=0.095±0.005 for Se72 and Ge72, respectively, which are 0.77 (for f?40) and 0.24, respectively, of Wilkinson's suggested single-particle unit for E0 matrix elements. The f is the 0??2 enhancement.[NUCLEAR REACTIONS Ge70(?,2n), E=27.5 MeV, Ge72(?,??) and Ge72(?,pn), E=27.5 MeV; measured in-beam ce spectra and time distributions; deduced T12 and E0 matrix element for 936-keV 0+ state in Se72 and 690-keV 0+ state in Ge72; compared KL ratio with theories.

James E. Draper; Nicholas S. P. King; Walter G. Wyckoff

1974-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Design of a short electro-optic modulator based on SiGe HBT structure  

E-Print Network [OSTI]

­68980C­10 (2008). 3. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu­17113 (2007). 7. S. Deng, Z. R. Huang, and J. F. McDonald, "Design of high efficiency multi-GHz SiGe HBT.-S. Rieh, D. Greenberg, A. Stricker, and G. Freeman, "Scaling of SiGe heterojunction bipolar transistors

Huang, Zhaoran "Rena"

442

Elastic neutron-scattering experiments at the Geesthacht Neutron Facility (GeNF)  

Science Journals Connector (OSTI)

The Geesthacht Neutron Facility (GeNF) comprises experimental facilities for elastic neutron scattering for materials research and engineering problems as well as for environmental research purposes at the research reactor FRG-1. The experimental facilities for elastic neutron-scattering experiments at GeNF, most of which can be optimally used with polarized neutrons, will be presented. They are open to national and international users from universities and other research institutes at no cost.

R Kampmann; R Wagner

1997-01-01T23:59:59.000Z

443

Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)  

SciTech Connect (OSTI)

We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

2011-01-05T23:59:59.000Z

444

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect (OSTI)

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

445

Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well  

SciTech Connect (OSTI)

We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1?x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1?x}Sn{sub x} and relaxed Si{sub 1?y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5?×?10{sup 4}?cm{sup ?1}) and the shift of the direct transition under large Stark effect at 3?V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

Yahyaoui, N., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr; Sfina, N.; Said, M., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr [Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia); Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UMR CNRS 7325, Aix-Marseille Université, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Bournel, A. [Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 Orsay cedex (France)

2014-01-21T23:59:59.000Z

446

Inelastic interaction induced by high-energy muons (6 GeV, 12 GeV) at low momentum-transfer in nuclear emulsion  

Science Journals Connector (OSTI)

Inelastic scattering of 6 and 12 GeV muons has been studied in Ilford K5 nuclear emulsions. For energy transfers greater than 150 MeV (for ?...2..., the cross-sections are respectively (11.1±1.4) ?b/nucleon at 12...

J. C. Montret; B. Coupat; B. Michel; F. Vazeille

1972-01-01T23:59:59.000Z

447

Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe  

E-Print Network [OSTI]

Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge; published 4 December 2007 Phase-change materials are of immense importance for optical recording-increasing demands on the density, speed, and stability of memory. Phase-change PC materials already play impor- tant

448

University Petition for General Education Variation The General Education (G.E.) program at Cal State Fullerton is the foundation of a university education. G.E. requirements  

E-Print Network [OSTI]

, students may petition for a variation to a standard G.E. requirement. IMPORTANT: This petition should plan for meeting the requirement being petitioned in the event the petition is denied. PREPARING it is prepared for review. If there is a historical TDA that has information on it that is no longer on your TDA

de Lijser, Peter

449

In situ observation of self-assembled Fe{sub 13}Ge{sub 8} nanowires growth on anisotropic Ge (1 1 0) surface  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Epitaxial Fe{sub 13}Ge{sub 8} nanowries growth and shape evolution on Ge (1 1 0) studied by in situ UHV-TEM. Black-Right-Pointing-Pointer Single type of morphology and unique orientation of nanowires formed at elevated temperatures. Black-Right-Pointing-Pointer Uniform control of the nanowires morphology at different temperatures can be succeeded. -- Abstract: Self-assembled iron germanide nanowires (NWs) were grown by directly depositing Fe onto a Ge (1 1 0) substrate, in an in situ ultra-high vacuum transmission electron microscope from 430 to 500 Degree-Sign C. All observed NWs had a similar length/width aspect ratio ({approx}8:1) at all deposition temperatures, as well as the same elongation orientation with respect to the underlying Ge (1 1 0) substrate. The growth dynamics was investigated by real time observations of NWs growth at elevated temperatures. It is elucidated that the formation of NWs in similar shape at all deposited temperatures is attributed to the similar activation energy barriers in length and width of NWs, which can result in the constant growth rate independent of growth temperatures. Furthermore, the difference in pre-exponential factor along the length and width of growing islands arose due to the anisotropic constraint of the Ge (1 1 0) substrate, leading to the unique elongation of NWs. This growth dynamics suggests the possibility of uniform control of the morphology of self-assembled NWs, as well as other morphologies of bottom-up fabricated devices, at different deposition temperatures.

Li, Zhi-Peng, E-mail: LI.Zhipeng@nims.go.jp [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore); Global Research Center for Environment and Energy based on Nanomaterials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Tok, Engsoon [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore); Foo, Yonglim [Institute of Materials Research and Engineering, 3 Research Link, S117602 (Singapore)] [Institute of Materials Research and Engineering, 3 Research Link, S117602 (Singapore)

2012-02-15T23:59:59.000Z

450

Single-Neutron Excitations in Neutron-Rich 83Ge and 85Se  

SciTech Connect (OSTI)

The 2H(82Ge,p)83Ge and 2H(84Se,p)85Se reactions were studied with radioactive beams of 82Ge and 84Se at beam energies of Ebeam = 330 and 380 MeV, respectively. Excitation energies, proton angular distributions, and asymptotic normalization coefficients have been determined for the lowest lying states of 83Ge and 85Se. Spectroscopic factors have also been extracted under normal assumptions of the bound-state potential properties in the DWBA analysis. However, the peripheral character of the measurements leads to large uncertainties in this extraction. Shell model calculations have been performed in the region above 78Ni, comparing the single-particle properties of the even-Z, N = 51 nuclei up to 91Zr and including 83Ge and 85Se. Direct-semidirect neutron capture calculations to 83Ge and 85Se have also been performed using the spectroscopic input from these (d,p) reaction measurements.

Thomas, Jeffrey S [ORNL; Arbanas, Goran [ORNL; Bardayan, Daniel W [ORNL; Blackmon, Jeff C [ORNL; Cizewski, Jolie [ORNL; Dean, David Jarvis [ORNL; Fitzgerald, Ryan [ORNL; Greife, Uwe [ORNL; Gross, Carl J [ORNL; Johnson, Micah [ORNL; Grzywacz-Jones, Kate L [ORNL; KOZUB, RAYMOND L [ORNL; Liang, J Felix [ORNL; Livesay, Jake [ORNL; Ma, Zhanwen [ORNL; Moazen, Brian H [ORNL; Nesaraja, Caroline D [ORNL; Shapira, Dan [ORNL; Smith, Michael Scott [ORNL; Visser, Dale William [ORNL

2007-01-01T23:59:59.000Z

451

Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy  

SciTech Connect (OSTI)

In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

Prestat, E. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Karlsruher Institut fuer Technologie (KIT), Laboratorium fuer Elektronenmikroskopie, D-76128 Karlsruhe (Germany); Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Jacquot, J.-F. [INAC, SCIB, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

2013-07-01T23:59:59.000Z

452

Molecular dynamics simulations of damage production by thermal spikes in Ge  

SciTech Connect (OSTI)

Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

Lopez, Pedro; Pelaz, Lourdes; Santos, Ivan; Marques, Luis A.; Aboy, Maria [Departamento de Electricidad y Electronica, Universidad de Valladolid, E.T.S.I. Telecomunicacion, Valladolid 47011 (Spain)

2012-02-01T23:59:59.000Z

453

Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering  

SciTech Connect (OSTI)

The XRMS experiment on the Gd{sub 5}Ge{sub 4} system has shown that, below the Neel temperature, T{sub N} = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd{sub 5}Ge{sub 4}. A spin-reorientation transition is a possibility in Gd{sub 5}Ge{sub 4}, which is similar to the Tb{sub 5}Ge{sub 4} case. Tb{sub 5}Ge{sub 4} possesses the same Sm{sub 5}Ge{sub 4}-type crystallographic structure and the same magnetic space group as Gd{sub 5}Ge{sub 4} does. The difference in magnetic structure is that Tb{sub 5}Ge{sub 4} has a canted one but Gd{sub 5}Ge{sub 4} has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb{sub 5}Ge{sub 4}. The spin-reorientation transition in both Gd{sub 5}Ge{sub 4} and Tb{sub 5}Ge{sub 4} may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.

Lizhi Tan

2008-08-18T23:59:59.000Z

454

Scanning tunneling microscopy study of the Eu-induced Ge(111)-(3×2)?(3×4) reconstruction  

Science Journals Connector (OSTI)

Eu-induced (3×2) reconstruction of the Ge(111) surface has been investigated by scanning tunneling microscopy (STM). The empty-state STM images show the chainlike atomic structure that is similar to those of the metal-induced Si(111)-(3×2) surfaces with an adsorbate coverage of 1?6 monolayer (ML). The filled-state STM images combined with the empty-state images at the low bias voltage reveal that the Ge arrangement of Eu?Ge(111)-(3×2) can be well interpreted in terms of the honeycomb chain-channel (HCC) model with the characteristic Ge?Ge double bond and slightly modified Ge honeycomb chains which are similar to those of the 1?6-ML HCC structure of Si(111)-(3×2). In addition, the Eu?Ge(111)-(3×2) surface is found to have a local ×4 periodicity along Eu chains, which can be explained, based on the analysis of STM line profiles, with two nonequivalent adsorption sites occupied by the Eu atoms in the empty channels of the HCC structure. The structural modifications of the Ge honeycomb chains as well as the origin of the ×2 and ×4 chains of Eu atoms in the HCC structure on the Eu?Ge(111) surface are discussed.

M. Kuzmin; P. Laukkanen; R. E. Perälä; I. J. Väyrynen

2006-03-23T23:59:59.000Z

455

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

Luong, T. K. P.; Dau, M. T.; Zrir, M. A.; Le Thanh, V.; Petit, M. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France)] [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Stoffel, M.; Rinnert, H. [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)] [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Ghrib, A.; El Kurdi, M.; Boucaud, P. [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France)] [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France); Murota, J. [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)] [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-08-28T23:59:59.000Z

456

6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GeV LIGHT SOURCE PROJECT GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YC/AVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (WBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A. As shown in the example, the project is first divided into: 1.1 Project Management and Administration

457

The Linac Injector For The ANL 7 Ge V Advanced Photon Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Injector For The ANL 7 Ge V Injector For The ANL 7 Ge V Advanced Photon Source A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory Submitted to the 1990 LINAC Conferece Albuquerque, New Mexico LS-154 9/28/90 TEE LINAC INJECTOR FOR TEE ANL 7 G<.iJ,V ADVANCED PHOTON SOORCE* A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory 9700 South Cass Avenue Argonne, IL 60439 USA Abstract The Argonne Advanced Photon Source (APS) linac system consists of a 200 MeV electron linac, a positron converter, and a 450 MeV positron linac. Design parameters and computer simulations of the two linac systems are presented. Introduction The Argonne Advanced Photon Source is a 7 GeV synchrotron X-Ray facility. The APS machine parameters have been described.

458

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH, INC (GE) FOR AN  

Broader source: Energy.gov (indexed) [DOE]

RESEARCH, INC (GE) FOR AN RESEARCH, INC (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE AWARD NO. DE-EE0005344; W(A) 2011-072 GE has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Module Embedded Microinverter Smart Grid Ready Residential Solar Electric System." The cooperative agreement was made under the Solar Energy Grid Integration Systems - Advanced Concepts (SEGIS-AC) Funding Opportunity Announcement (DE-FOA-0000479). The objectives of SEGIS-AC are to support the development and demonstration of technologies in power electronics that reduce the overall PV system costs, allow high penetrations of solar

459

STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT  

Broader source: Energy.gov (indexed) [DOE]

0 0 STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE- FC07-011D14093; W(A)-01-031; CH-1078 The Petitioner, GE, has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Microanalysis Techniques for Accelerated Characterization of Polymer Properties." This waiver will not impact the rights of those parties subject to Public Law 96-517, as amended, nor shall it grant any rights in inventions made by employees of the National Laboratories. The objective of the cooperative agreement is to develop techniques and

460

Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc  

Broader source: Energy.gov (indexed) [DOE]

5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders

462

5-10 GeV Neutrinos from Gamma-Ray Burst Fireballs  

E-Print Network [OSTI]

A gamma-ray burst fireball is likely to contain an admixture of neutrons, in addition to protons, in essentially all progenitor scenarios. Inelastic collisions between differentially streaming protons and neutrons in the fireball produce muon neutrinos (antineutrinos) of ~ 10 GeV as well as electron neutrinos (antineutrinos) of ~ 5 GeV, which could produce ~ 7 events/year in kilometer cube detectors, if the neutron abundance is comparable to that of protons. Photons of ~ 10 GeV from pi-zero decay and ~ 100 MeV electron antineutrinos from neutron decay are also produced, but will be difficult to detect. Photons with energies < 1 MeV from shocks following neutron decay produce a characteristic signal which may be distinguishable from the proton-related MeV photons.

John N. Bahcall; Peter Meszaros

2000-06-23T23:59:59.000Z

463

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Y. Maeda; N. Kawasaki; T. Masuda; H. Morii; D. Naito; Y. Nakajima; H. Nanjo; T. Nomura; N. Sasao; S. Seki; K. Shiomi; T. Sumida; Y. Tajima

2014-12-22T23:59:59.000Z

464

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Maeda, Y; Masuda, T; Morii, H; Naito, D; Nakajima, Y; Nanjo, H; Nomura, T; Sasao, N; Seki, S; Shiomi, K; Sumida, T; Tajima, Y

2014-01-01T23:59:59.000Z

465

Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters  

SciTech Connect (OSTI)

Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

Yuan, H. K.; Chen, H., E-mail: chenh@swu.edu.cn; Kuang, A. L.; Tian, C. L.; Wang, J. Z. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)] [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2013-11-28T23:59:59.000Z

466

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

467

Structural relaxation and order in ion-implanted Si and Ge  

Science Journals Connector (OSTI)

Raman scattering measurements are reported as a function of annealing temperature on heavily damaged, ion-implanted Ge and Si. Changes in the opticlike, TO Raman bandwidth of amorphous Ge are found to correlate with the estimated heat of structural relaxation obtained from the data of Donovan et al. This result is consistent with a bond-strain model, demonstrating that structural relaxation is primarily associated with short-range bond-angle ordering. The results also allow an estimate of the temperature dependence of the width of the bond-angle distribution to be obtained with annealing. The Raman spectra of ion-implanted Si indicate greater order in the amorphous state than similarly prepared amorphous Ge. Estimates of the corresponding heat of structural relaxation of amorphous Si suggest that this should be observable.

J. Fortner and J. S. Lannin

1988-06-15T23:59:59.000Z

468

Effects of orbital occupancies on the neutrinoless beta-beta matrix element of 76Ge  

E-Print Network [OSTI]

In this work we use the recently measured neutron occupancies in the 76Ge and 76Se nuclei as a guideline to define the neutron quasiparticle states in the 1p0f0g shell. We define the proton quasiparticles by inspecting the odd-mass nuclei adjacent to 76Ge and 76Se. We insert the resulting quasiparticles in a proton-neutron quasiparticle random-phase approximation (pnQRPA) calculation of the nuclear matrix element of the neutrinoless double beta (0-nu-beta-beta) decay of 76Ge. A realistic model space and effective microscopic two-nucleon interactions are used. We include the nucleon-nucleon short-range correlations and other relevant corrections at the nucleon level. It is found that the resulting 0-nu-beta-beta matrix element is smaller than in the previous pnQRPA calculations, and closer to the recently reported shell-model results.

J. Suhonen; O. Civitarese

2008-03-10T23:59:59.000Z

469

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network [OSTI]

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

470

Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance  

SciTech Connect (OSTI)

Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (?200?nm) devices with photocurrents at 0.5?V of 10{sup ?4} A cm{sup ?2} while the thickest devices have photocurrents at 0.5?V of 10{sup ?2} A cm{sup ?2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5?V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

Church, Carena P.; Carter, Sue A., E-mail: sacarter@ucsc.edu [Department of Physics, University of California Santa Cruz, Santa Cruz, California 95064 (United States); Muthuswamy, Elayaraja; Kauzlarich, Susan M. [Department of Chemistry, University of California Davis, Davis, California 95616 (United States)] [Department of Chemistry, University of California Davis, Davis, California 95616 (United States); Zhai, Guangmei [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)] [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)

2013-11-25T23:59:59.000Z

471

Phase Development in a U-7 wt.% Mo vs. Al-7 wt.% Ge Diffusion Couple  

SciTech Connect (OSTI)

Fuel development for the Reduced Enrichment for Research and Test Reactors (RERTR) program has demonstrated that U-Mo alloys in contact with Al develop interaction regions with phases that have poor irradiation behavior. The addition of Si to the Al has been considered with positive results. Compositional modification to replace Si with Ge is now under evaluation to attempt to further improve irradiation behavior. In this study, the microstructural and phase development of a diffusion couple of U-7 wt.% Mo in contact with Al-7 wt.% Ge was examined by transmission electron microscopy, scanning electron microscopy and energy dispersive spectroscopy. The interdiffusion zone developed a microstructure that included the cubic-UGe3 phase and amorphous phases. The UGe3 phase was observed with and without Mo and Al solid solutioning developing a (U,Mo)(Al,Ge)3 phase.

E. Perez; D.D. Keiser, Jr.; Y.H. Sohn

2013-10-01T23:59:59.000Z

472

Lattice constants and optical response of pseudomorph Si-rich SiGe:B  

SciTech Connect (OSTI)

Pseudomorph epitaxial films of Si{sub 1?x}Ge{sub x}:B were grown on undoped (100) Si for x???0.026 and the B concentration of 1.3?×?10{sup 20}?cm{sup ?3}.The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized {sup 11}B and {sup 10}B vibrations have been observed. The spectral shift of E{sub 1} electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.

Caha, O. [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic)] [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Kostelník, P.; Šik, J. [ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic)] [ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic); Kim, Y. D. [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)] [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Humlí?ek, J., E-mail: humlicek@physics.muni.cz [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2013-11-11T23:59:59.000Z

473

Pion correlations in 1.8A GeV Ar on KCl and La and 1.2A GeV Xe on La  

Science Journals Connector (OSTI)

Results are presented for pion interferometry measurements of 1.8A GeV Ar+KCl and Ar+La, and 1.2A GeV Xe + La at the Lawrence Berkeley Laboratory Heavy Ion Spectrometer System. The parameters R, ?, ?, R?, and R? are presented for all three projectile-target combinations. The correlation between the extracted size of the pion source and the centrality of the collision is investigated as well as the freeze-out densities and the dependence of the source size on the mean momentum of the pion pairs. The experimental setup and analysis are discussed and comparisons made with the results of others. The phase space covered is at forward angles in the center-of-mass system.

W. B. Christie; W. F. J. Mueller; D. L. Olson; T. J. M. Symons; H. H. Wieman; D. Beavis; F. P. Brady; J. L. Romero; C. E. Tull; T. Abbott; S. Y. Fung; D. Keane; Y. Liu

1992-06-01T23:59:59.000Z

474

Polarization of Lambda0 and antiLambda0 inclusively produced by 610GeV/c Sigma- and 525GeV/c proton beams  

E-Print Network [OSTI]

We have measured the polarization of Lambda0 and antiLambda0 inclusively produced by 610GeV/c Sigma- and 525GeV/c proton beams in the experiment SELEX during the 1996/7 fixed target run at Fermilab. The polarization was measured as a function of the Lambda longitudinal momentum fraction xF and transverse momentum pt. For the Lambda0 produced by Sigma- the polarization is increasing with xF, from slightly negative at x_F~0 to about 15% at large xF; it shows a non-monotonic behavior as a function of pt. For the proton beam, the Lambda0 polarization is negative and decreasing as a function of xF and pt. The antiLambda0 polarization is compatible with 0 for both beam particles over the full kinematic range. The target dependence was examined but no statistically significant difference was found.

SELEX Collaboration; J. L. Sanchez-Lopez; K. D. Nelson; J. Engelfried

2007-06-25T23:59:59.000Z

475

Measurement of high-p/sub T/ correlations in 340-GeV/c pp and 280-GeV/c. pi. /sup -/p reactions  

SciTech Connect (OSTI)

We have measured correlations between single high-p/sub T/ (1.5 < p/sub T/ < 3.5 GeV/c) trigger particles on one side of the beam line and groups of particles entering a calorimeter on the opposite side of the beam line. The mean transverse momentum measured in the calorimeter is found to increase with the trigger-particle transverse momentum. The coplanarity of the events increases with trigger-particle transferse momentum. We have compared our data to the predictions of a phenomenological four-jet model. To fit our data we find that we must give large (0.9 GeV/c) mean transverse momenta to the constituents of the initial hadrons.

Oliver, W.P.; Limon, P.; Mantsch, P.

1983-03-01T23:59:59.000Z

476

Measurement of charged pions in 12C + 12C collisions at 1A GeV and 2A GeV with HADES  

E-Print Network [OSTI]

We present the results of a study of charged pion production in 12C + 12C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of pi+- mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular range measurement of the distribution of pi+- mesons for the 12C + 12C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed.

Agakichiev, G

2009-01-01T23:59:59.000Z

477

Measurement of charged pions in 12C + 12C collisions at 1A GeV and 2A GeV with HADES  

E-Print Network [OSTI]

We present the results of a study of charged pion production in 12C + 12C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of pi+- mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular range measurement of the distribution of pi+- mesons for the 12C + 12C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed.

The HADES Collaboration; G. Agakishiev; C. Agodi; A. Balanda; G. Bellia; D. Belver; A. Belyaev; J. Bielcik; A. Blanco; A. Bortolotti; J. L. Boyard; P. Braun-Munzinger; P. Cabanelas; S. Chernenko; T. Christ; R. Coniglione; M. Destefanis; J. Diaz; F. Dohrmann; I. Duran; A. Dybczak; T. Eberl; L. Fabbietti; O. Fateev; R. Ferreira-Marques; P. Finocchiaro; P. Fonte; J. Friese; I. Froehlich; T. Galatyuk; J. A. Garzon; R. Gernhaeuser; A. Gil; C. Gilardi; M. Golubeva; D. Gonzalez-Diaz; E. Grosse; F. Guber; M. Heilmann; T. Heinz; T. Hennino; R. Holzmann; A. Ierusalimov; I. Iori; A. Ivashkin; M. Jurkovic; B. Kaempfer; K. Kanaki; T. Karavicheva; D. Kirschner; I. Koenig; W. Koenig; B. W. Kolb; R. Kotte; A. Kozuch; A. Krasa; F. Krizek; R. Kruecken; W. Kuehn; A. Kugler; A. Kurepin; J. Lamas-Valverde; S. Lang; J. S. Lange; K. Lapidus; L. Lopes; M. Lorenz; L. Maier; C. Maiolino; A. Mangiarotti; J. Marin; J. Markert; V. Metag; B. Michalska; J. Michel; E. Moriniere; J. Mousa; M. Muench; C. Muentz; L. Naumann; R. Novotny; J. Otwinowski; Y. C. Pachmayer; M. Palka; Y. Parpottas; V. Pechenov; O. Pechenova; T. Perez Cavalcanti; P. Piattelli; J. Pietraszko; V. Pospisil; W. Przygoda; B. Ramstein; A. Reshetin; M. Roy-Stephan; A. Rustamov; A. Sadovsky; B. Sailer; P. Salabura; P. Sapienza; A. Schmah; C. Schroeder; E. Schwab; R. S. Simon; Yu. G. Sobolev; S. Spataro; B. Spruck; H. Stroebele; J. Stroth; C. Sturm; M. Sudol; A. Tarantola; K. Teilab; P. Tlusty; M. Traxler; R. Trebacz; H. Tsertos; V. Wagner; M. Weber; M. Wisniowski; T. Wojcik; J. Wuestenfeld; S. Yurevich; Y. Zanevsky; P. Zhou; P. Zumbruch

2009-05-18T23:59:59.000Z

478

Changing the PEP-II Center-of-Mass Energy Down to 10 GeV and up to 11 GeV  

SciTech Connect (OSTI)

PEP-II, the SLAC, LBNL, LLNL B-Factory was designed and optimized to run at the Upsilon 4S resonance (10.580 GeV with an 8.973 GeV e- beam and a 3.119 GeV e+ beam). The interaction region (IR) used permanent magnet dipoles to bring the beams into a head-on collision. The first focusing element for both beams was also a permanent magnet. The IR geometry, masking, beam orbits and beam pipe apertures were designed for 4S running. Even though PEP-II was optimized for the 4S, we successfully changed the center-of-mass energy (E{sub cm}) down to the Upsilon 2S resonance and completed an E{sub cm} scan from the 4S resonance up to 11.2 GeV. The luminosity throughout most of these changes remained near 1 x 10{sup 34} cm{sup -2}s{sup -1}. The E{sub cm} was changed by moving the energy of the high-energy beam (HEB). The beam energy differed by more than 20% which produced significantly different running conditions for the RF system. The energy loss per turn changed 2.5 times over this range. We describe how the beam energy was changed and discuss some of the consequences for the beam orbit in the interaction region. We also describe some of the RF issues that arose and how we solved them as the high-current HEB energy changed.

Sullivan, M; Bertsche, K.; Novokhatski, A.; Seeman, J.; Wienands, U.; /SLAC

2009-05-20T23:59:59.000Z

479

Conceptual Design of A 1-2 GeV Synchroton Radiation Source  

SciTech Connect (OSTI)

A description is presented of the conceptual design of the Lawrence Berkeley Laboratory 1-2 GeV Synchrotron Radiation Source, which is designed to produce ultraviolet and soft x-ray radiation. The facility consists of an injection system (linac plus booster synchrotron), a low emittance storage ring optimized at 1.5 GeV, several insertion devices (wigglers and undulators) located in the storage ring straight sections, and beam lines from the insertion devices and bending magnets. Storage ring performance is analyzed in terms of lattice, collective instabilities and beam lifetime. The injection system and its performance are discussed. Spectral characteristics of the radiation are presented.

The 1-2 GeV Synchrotron Radiation Source Design St

1986-08-01T23:59:59.000Z

480

First Observation of Dielectron Production in Proton-Nucleus Collisions below 10 GeV  

Science Journals Connector (OSTI)

We have begun a program to measure dielectron production in p-nucleus and nucleus-nucleus collisions at the LBL Bevalac. Results are presented for the reaction p+Be at 4.9 GeV. For the first time, direct dilepton production is observed below 10 GeV incident energy. The cross sections are discussed and compared to previous data at higher energies. The observation of a structure at a mass of about 275 MeV suggests that pion annihilation may be the dominant production mechanism in this mass range.

G. Roche; G. Claesson; D. Hendrie; G. F. Krebs; E. Lallier; A. Letessier-Selvon; H. S. Matis; T. Mulera; C. Naudet; L. Schroeder; P. A. Seidl; A. Yegneswaran; Z. F. Wang; J. Bystricky; J. Carroll; J. Gordon; G. Igo; S. Trentalange; T. Hallman; L. Madansky; J. F. Gilot; P. Kirk; D. Miller; G. Landaud ((DLS Collaboration))

1988-08-29T23:59:59.000Z

Note: This page contains sample records for the topic "ge lt gt" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Blue Emission Peak of GeO{sub 2} Particles Grown Using Thermal Evaporation  

SciTech Connect (OSTI)

In this paper we report a simple thermal evaporation technique (horizontal tube furnace) to grow large quantities of GeO{sub 2} particles with diameters ranging from tens of nanometer to 500 nm on n-type (100) Si substrate free of catalyst. The particles were grown at temperature about 1000 degree sign C for 2 hrs and characterized by scanning electron microscopy (SEM), X-Ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy. The photoluminescence spectrum reveals several emission peaks around 400 nm at room temperature. Raman measurement also measured at room temperature for this GeO{sub 2} particles.

Sulieman, Kamal Mahir [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Physics Department, Alzaiem Alazhary University, 1432-Khartoum (Sudan); Jumidali, M. M. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia); Hashim, M. R. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2010-07-07T23:59:59.000Z

482

Search for neutrinoless double-beta decay of Ge-76 with GERDA  

E-Print Network [OSTI]

GERDA, the GERmanium Detector Array experiment, is a new double beta-decay experiment which is currently under construction in the INFN National Gran Sasso Laboratory (LNGS), Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of GERDA is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments. The paper discusses motivation, physics reach, design and status of construction of GERDA, and presents some R&D results.

Karl-Tasso Knoepfle

2008-09-30T23:59:59.000Z

483

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (?-Ge)  

Science Journals Connector (OSTI)

Abstract In this paper, metal-induced crystallization (MIC) phenomenon on ?-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

Dong-Ho Kang; Jin-Hong Park

2014-01-01T23:59:59.000Z

484

Effect of Si interlayers on the magnetic and mechanical properties of Fe/Ge neutron polarizing multilayer mirrors  

SciTech Connect (OSTI)

The neutron polarizing supermirror is one of the most important optical devices for polarizing neutron beams. To meet a variety of research demands, neutron polarizing supermirrors need to display high polarization efficiencies at low external magnetic fields. Fe/Si and Fe/Ge multilayers are typically used in neutron polarizing supermirrors because the contrast in scattering length densities almost vanishes for spin-down neutrons. The Fe/Si/Ge/Si multilayer, obtained by adding thin interlayers of Si to an Fe/Ge multilayer, is effective in reducing the external field strength necessary to achieve efficient neutron polarization. To gain insight into the mechanism that controls the required external field strength for a neutron polarizing supermirror, we investigated the magnetic and mechanical properties of Fe/Si, Fe/Ge, and Fe/Si/Ge/Si multilayers. The external field strength required to achieve efficient neutron polarization was found to be proportional to the compressive film stress. The compressive stress of the Fe/Si/Ge/Si multilayer was smaller by a factor of 4.4 and 2.7 than that of Fe/Si and Fe/Ge multilayers, respectively. These measurements and analyses showed that a reduction in the compressive film stress in the Fe/Si/Ge/Si multilayer permits the use of lower external field strength to achieve efficient neutron polarization. X-ray photoelectron spectroscopic studies showed that the formation of a Ge-Si solid solution in the Ge layer may explain the marked reduction in compressive stress in the case of the Fe/Si/Ge/Si multilayer. This study confirmed that a reduction in compressive film stress is very important for a high-performance neutron polarizing supermirror.

Maruyama, R.; Yamazaki, D.; Hayashida, H.; Soyama, K. [J-PARC Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Okayasu, S. [Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Takeda, M. [J-PARC Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Zettsu, N.; Nagano, M.; Yamamura, K. [Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871 (Japan)

2012-03-15T23:59:59.000Z

485

Low-temperature (180?°C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization  

SciTech Connect (OSTI)

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180?°C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10??m and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180?°C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Numata, R.; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Fukata, N. [National Institute for Materials Science, Namiki, Tsukuba 305-0044 (Japan); Usami, N. [Materials, Physics and Energy Engineering, Nagoya University, Aichi 464-8603 (Japan)

2014-01-13T23:59:59.000Z

486

The interfacial reaction of Ni on (100) Si?â??xGex (x=0, 0.25) and (111) Ge  

E-Print Network [OSTI]

The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

Jin, Lijuan

487

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions  

E-Print Network [OSTI]

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind

488

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes-Based Electrical  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes/Ge-based avalanche photodiode (APD) for the direct genera- tion of ultra-wideband (UWB) frequency comb lines--Avalanche photodiodes (APD), impulse radio (IR), ultra-wideband (UWB). I. INTRODUCTION THERE has been a great scarcity

Bowers, John

489

Planar waveguide obtained by burying a Ge22As20Se58 fiber in As2S3 glass  

E-Print Network [OSTI]

Planar waveguide obtained by burying a Ge22As20Se58 fiber in As2S3 glass Quentin Coulombier glasses. Two highly mature chalcogenide glasses are used for these experiments. GASIR glass from Umicore IR Glass, Olen, Belgium, with the composition of Ge22As20Se58 is used to draw fibers

Paris-Sud XI, Université de

490

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

491

Beyond the standard Higgs after the 125 GeV Higgs discovery  

Science Journals Connector (OSTI)

...behind and beyond the discovery of the Higgs boson...after the 125 GeV Higgs discovery C. Grojean e-mail...behind and beyond the discovery of the Higgs boson...Model up to very high energy, maybe as high as the...fill the universe with dark matter and does not...

2015-01-01T23:59:59.000Z

492

A Letter of Intent to The J-PARC 50 GeV Proton Synchrotron  

E-Print Network [OSTI]

system would also be provide higher intensity muon beams for the PRISM project. The proposed studies are to be made using small numbers ( 1,000 total) of intense proton pulses from the 50-GeV ring at J of Materials for Vacuum Windows . . . . . . . . . . . . 9 1.3.2 Studies of Carbon Targets . . . . . . . . . . . . . . . . . . .

McDonald, Kirk

493

Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2  

E-Print Network [OSTI]

of integration and packaging3 . Conventional Si or III-V based semiconductor materials have a low thermoelectric-plan thermal conductivity, electrical conductivity of SiGe superlattice5,6,7,8 . There are still very few; : electrical resistivity; KT: Thermal conductivity12 . Experiments The micro-cooler structure is based on cross

494

Depletion of light cluster production in 1 GeV proton-nucleus collisions  

Science Journals Connector (OSTI)

Experimental results for the fragment production in 1 GeV proton collisions on various nuclei are presented. It is shown that the observed depletion of the light cluster production which is also found in other experiments can be explained by a Pauli quenching mechanism.

G. Roepke; H. Schulz; L. N. Andronenko; A. A. Kotov; W. Neubert; E. N. Volnin

1985-04-01T23:59:59.000Z

495

A measurement of the energy loss spectrum of 150 GeV muons in iron  

Science Journals Connector (OSTI)

The energy loss spectrum of 150 GeV muons has been measured with a prototype of ... dP/dv per radiation length of a fractional energy loss v = ?E?/E? has been measured in the range v...= 0.01 ÷ 0.95; it is compar...

1997-09-01T23:59:59.000Z

496

Measurement of the Nucleon Structure Function in Iron Using 215- and 93-GeV Muons  

Science Journals Connector (OSTI)

This Letter presents measurements of the nucleon structure function F2(x,Q2) based on the deep-inelastic scattering of 215- and 93-GeV muons in the iron multimuon spectrometer at Fermilab. With use of a lowest-order QCD calculation, a value of ?LO=230±40(stat.)±80(syst.) MeV/c is found.

A. R. Clark; K. J. Johnson; L. T. Kerth; S. C. Loken; T. W. Markiewicz; P. D. Meyers; W. H. Smith; M. Strovink; W. A. Wenzel; R. P. Johnson; C. Moore; M. Mugge; R. E. Shafer; G. D. Gollin; F. C. Shoemaker; P. Surko

1983-11-14T23:59:59.000Z