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1

GE Appliances and Lighting Home Energy Solutions  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

2

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network [OSTI]

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

3

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

4

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Broader source: Energy.gov (indexed) [DOE]

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

5

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

6

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 1–2 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

7

Smart Street Lights | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LightGrid Provides Real-Time Feedback From Street Lights LightGrid Provides Real-Time Feedback From Street Lights You use a GPS to provide real-time data from your car. Now,...

8

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Broader source: Energy.gov (indexed) [DOE]

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

9

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

10

6 GeV light source project cost estimating procedure  

SciTech Connect (OSTI)

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

11

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

12

Carousolar | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

13

6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GeV LIGHT SOURCE PROJECT GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YC/AVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (WBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A. As shown in the example, the project is first divided into: 1.1 Project Management and Administration

14

Building | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

15

Depletion of light cluster production in 1 GeV proton-nucleus collisions  

Science Journals Connector (OSTI)

Experimental results for the fragment production in 1 GeV proton collisions on various nuclei are presented. It is shown that the observed depletion of the light cluster production which is also found in other experiments can be explained by a Pauli quenching mechanism.

G. Roepke; H. Schulz; L. N. Andronenko; A. A. Kotov; W. Neubert; E. N. Volnin

1985-04-01T23:59:59.000Z

16

GE Research and Development | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

17

TEE-0077 - In the Matter of GE Appliances & Lighting | Department...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

tee0077.pdf More Documents & Publications EXC-12-0010 - In the Matter of DLU Lighting USA EXC-14-0001 - In the Matter of Felix Storch Inc. OHA Product Efficiency Cases Archive...

18

Working at GE Global Research | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

19

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

20

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Curing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

22

GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

23

GE Healthcare Antibody Purification  

E-Print Network [OSTI]

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

24

SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SYNCHROTRON LIGHT SOURCE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SHIELDING ESTIMATES FOR THE ANL 6.0 GeV SYNCHROTRON LIGHT SOURCE H. J. Moe V. R. Veluri LS-55-Revised Harch 1987 2 1.0 Introduction Shielding estimates for the linac, positron converter, booster synchrotron and the positron storage ring have been computed using preliminary design information. Calculations have been made of the resulting radiation for several types of operations involving normal beam loss, as well as, certain accidental beam losses. When available, experimental data from existing accelerator and light source facilities have been used in lieu of theoretical estimates. 2.0 Shielding Design Objective The Department of Energy's basic occupational exposure limit is 5 rem per year (DOE 81). However, in its guidance for maintaining exposures "as

25

GE and Quirky | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

26

Powering | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

27

Predix | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

28

Synthesis of visible light emitting self assembled Ge nanocrystals embedded within a SiO{sub 2} matrix  

SciTech Connect (OSTI)

As-grown light emitting self-assembled Ge nanocrystals (Ge-NCs) embedded in a SiO{sub 2} matrix were produced via a sequential deposition process of SiO{sub 2}/Ge/SiO{sub 2} layers employing a reactive radio frequency sputtering technique. Obtained Ge-NCs show a crystallographic phase, the proportion, size, quality, and specific orientation of which are determined by the oxygen partial pressure. Photoluminescence (PL) spectra indicate that the size distribution of Ge-NCs is reduced and centered on about 8 nm when higher oxygen partial pressure is employed; the formation of Ge-NCs is corroborated by transmission electron microscopy measurements, and their sizes are consistent with estimates from PL measurements. Resistivity measurements are explained by a near neighbors hopping process, with specific features depending on the Ge-NCs' size. The features of PL and resistivity measurements indicate that there is no appreciable dependence of the number of interfacial defects on the oxygen partial pressure.

Hernandez-Hernandez, A.; De Moure-Flores, F.; Quinones-Galvan, J. G.; Santoyo-Salazar, J.; Melendez-Lira, M. [Departamento de Fisica, Centro de Investigacion y de Estudios Avanzados del Instituto Politecnico Nacional, A.P. 14740, C.P. 07300, Mexico, Distrito Federal (Mexico); Rangel-Kuoppa, V. T. [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Plach, Thomas [Christian Doppler Laboratory for Microscopic and Spectroscopic Material Characterization, Center for Surface and Nanoanalytics, Johannes Kepler Universitaet, A-4040 Linz (Austria); Zapata-Torres, M. [Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Legaria IPN, Calzada Legaria 694, Col. Irrigacion, 11500 Mexico, Distrito Federal (Mexico); Hernandez-Hernandez, L. A. [Escuela Superior de Fisica y Matematicas del Instituto Politecnico Nacional, Edificio 9 U.P. Adolfo Lopez Mateos, Col. San Pedro Zacatenco, C.P. 07730 (Mexico)

2012-02-15T23:59:59.000Z

29

A Spin-Light Polarimeter for Multi-GeV Longitudinally Polarized Electron Beams  

SciTech Connect (OSTI)

The physics program at the upgraded Jefferson Lab (JLab) and the physics program envisioned for the proposed electron-ion collider (EIC) include large efforts to search for interactions beyond the Standard Model (SM) using parity violation in electroweak interactions. These experiments require precision electron polarimetry with an uncertainty of < 0.5 %. The spin dependent Synchrotron radiation, called "spin-light," can be used to monitor the electron beam polarization. In this article we develop a conceptual design for a "spin-light" polarimeter that can be used at a high intensity, multi-GeV electron accelerator. We have also built a Geant4 based simulation for a prototype device and report some of the results from these simulations.

Mohanmurthy, Prajwal [Mississippi State University, Starkville, MS (United States); Dutta, Dipangkar [Mississippi State University, Starkville, MS (United States) and Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

2014-02-01T23:59:59.000Z

30

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

31

Chevron, GE form Technology Alliance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

32

GE PowerPoint Template  

Broader source: Energy.gov (indexed) [DOE]

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

33

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes…

1993-11-01T23:59:59.000Z

34

Colon Cancer Mapping | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

35

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

36

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams…

2011-01-01T23:59:59.000Z

37

Vacuum performance of the Synchroton Radiation Research Center 1.3 GeV synchrotron light source  

Science Journals Connector (OSTI)

The operation of the Synchrotron Radiation Research Center 1.3 GeV synchrotron light source vacuum system shows good features of quick beam self?cleaning low carbonaceous gas desorption and less dust. The phenomenon of the photon induced desorption (PID) has been studied. Recently a set of new vacuum chambers for wiggler were installed and the commissioning of the storage ring was restarted. The pressure rise and the PID coefficients during the beam running both in the straight and bending chambers were compared. The performance of the overall vacuum system is to be described.

G. Y. Hsiung; J. R. Huang; J. G. Shyy; D. J. Wang; J. R. Chen; Y. C. Liu

1996-01-01T23:59:59.000Z

38

Natural Gas Locomotive | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

39

New Medical Technology | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

40

Hospital Sterile Processing | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Oil & Gas Technology Center | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

42

GE Innovation and Manufacturing in Europe | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

43

GE Global Research Europe, Munich, Germany | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

44

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

45

MEMS Relays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

46

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

47

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

48

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect (OSTI)

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

49

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

50

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect (OSTI)

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

51

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

52

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams…

2004-01-01T23:59:59.000Z

53

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams…

2005-01-01T23:59:59.000Z

54

Clean Cities: National Clean Fleets Partner: GE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

55

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

56

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko…

1995-01-01T23:59:59.000Z

57

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

58

Technology "Relay Race" Against Cancer | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

59

Crowdsourcing Software Award | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

60

Work and Life Balance | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Hauptbewässerungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewässerungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

62

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

63

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect (OSTI)

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

64

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect (OSTI)

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

65

Ge atom distribution in buried dome islands  

SciTech Connect (OSTI)

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

66

membrane-ge | netl.doe.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

67

Robotic Wind Turbine Inspection | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

68

Advanced Propulsion Systems | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

69

One Young World Summit |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

70

Nanoscale Material Properties | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

71

Happy Pi Day! | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

72

Patricia C. Irwin | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

73

Ge–Si–O phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400?°C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mücklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

74

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin…

1996-01-01T23:59:59.000Z

75

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

76

GE Turbine Parts www.edisonmachine.com  

E-Print Network [OSTI]

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

77

Modeling of GE Appliances: Final Presentation  

SciTech Connect (OSTI)

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

78

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect (OSTI)

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

79

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect (OSTI)

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

80

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect (OSTI)

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Ge-on-Si laser for silicon photonics  

E-Print Network [OSTI]

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

82

Science as Art: Jet Engine Airflow | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

83

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect (OSTI)

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

84

Robust Lower Bounds on Intergalactic Magnetic Fields from Simultaneously Observed GeV-TeV Light Curves of the Blazar Mkn 501  

E-Print Network [OSTI]

We derive model-independent lower bounds on intergalactic magnetic fields from upper limits on the pair echo emission from the blazar Mkn 501, that is, delayed GeV emission from secondary electron-positron pairs produced via interactions of primary TeV gamma rays with the cosmic infrared background. We utilize only simultaneously observed GeV-TeV light curves during the flaring activity in 2009 obtained by VERITAS, MAGIC and {\\it Fermi}-LAT. This leads to limits on the magnetic field strengths of $B \\gtrsim 10^{-19.5} {\\rm G}$ and $B \\gtrsim 10^{-19} {\\rm G}$, at 99% C.L. and 90% C.L., respectively, for a field coherence length of 1 kpc. Our analysis is firmly based on the observational data alone and does not depend on any assumptions concerning the primary TeV flux during unobserved periods. Thus, our evaluation of the flux of the pair echo is conservative and the deduced constraints are much more robust compared to previous studies.

Takahashi, Keitaro; Ichiki, Kiyotomo; Inoue, Susumu

2011-01-01T23:59:59.000Z

85

Engineer Receives UMass "Salute To Service" Award | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

86

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

87

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect (OSTI)

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

88

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lückenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

89

GE_Order_and_Compromise_Agreement.pdf  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

90

12 GeV Upgrade | Jefferson Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

91

Working in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

92

Metal MEMS Devices | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

93

Adam Rasheed | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

94

Air Traffic Operations | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

95

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

96

Andrew Gorton | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

97

GE's Christine Furstoss Named to NACIE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

98

Jie Shen | Inventors | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

99

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

100

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

102

GE Opens New Global R&D Center in Brazil - GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

103

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect (OSTI)

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

104

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

105

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

106

New York–Presbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New York–Presbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

107

Updated cosmic-ray and radio constraints on light dark matter: Implications for the GeV gamma-ray excess at the Galactic center  

E-Print Network [OSTI]

The apparent gamma-ray excess in the Galactic center region and inner Galaxy has attracted considerable interest, notably because both its spectrum and radial distribution are consistent with an interpretation in terms of annihilating dark matter particles with a mass of about 10-40 GeV. We confront such an interpretation with an updated compilation of various indirect dark matter detection bounds, which we adapt to the specific form required by the observed signal. We find that cosmic-ray positron data strongly rule out dark matter annihilating to light leptons, or 'democratically' to all leptons, as an explanation of the signal. Cosmic-ray antiprotons, for which we present independent and significantly improved limits with respect to previous estimates, are already in considerable tension with DM annihilation to any combination of quark final states; the first set of AMS-02 data will thus be able to rule out or confirm the DM hypothesis with high confidence. For reasonable assumptions about the magnetic field in the Galactic center region, radio observations independently put very severe constraints on a DM interpretation of the excess, in particular for all leptonic annihilation channels.

Torsten Bringmann; Martin Vollmann; Christoph Weniger

2014-06-23T23:59:59.000Z

108

Viscosity Measurement G.E. Leblanc  

E-Print Network [OSTI]

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

109

Light sfermion interplay in the 125 GeV MSSM Higgs production and decay at the LHC  

E-Print Network [OSTI]

We study the effects from light sfermions on the lightest Higgs boson production and decay at the Large Hadron Collider (LHC) within the Minimal Supersymmetric Standard Model (MSSM). We find that the scenario with light coloured sfermions -- stops or sbottoms -- has the potential to explain a non-universal alteration, as hinted by LHC data, of the gluon-gluon Fusion ($\\mu_{ggF}$) with respect to the Vector Boson Fusion ($\\mu_{VBF}$) event rates and, in particular, can predict $\\frac{\\mu_{VBF}}{\\mu_{ggF}}>1$ for all Higgs boson decay channels in large areas of the parameter space. We also find that the scenario with a light stop/sbottom can be complemented by the scenario in which the total Higgs width, $\\Gamma_{\\rm tot}$, is reduced due to a suppressed Yukawa coupling $Y_b$. In this case, the reduction of the Higgs production rates in the $ggF$ process which occurs in the maximal mixing scenario is compensated by the reduction of the $H\\to b\\bar{b}$ partial decay width, the largest component of $\\Gamma_{\\rm t...

Belyaev, Alexander; Moretti, Stefano; Thomas, Marc

2013-01-01T23:59:59.000Z

110

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Broader source: Energy.gov (indexed) [DOE]

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

111

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect (OSTI)

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

112

Silicon Carbides in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

113

The Majorana Ge-76 double-beta decay project  

SciTech Connect (OSTI)

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

114

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

115

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect (OSTI)

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

116

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network [OSTI]

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

117

Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal–oxide–semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Sürgers; J Schulze

2013-01-01T23:59:59.000Z

118

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

119

12 GeV detector technology at Jefferson Lab  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

120

Robust Lower Bounds on Magnetic Fields in Intergalactic Voids from Long-Term GeV-TeV Light Curves of the Blazar Mrk 421  

E-Print Network [OSTI]

Lower bounds are derived on the amplitude B of intergalactic magnetic fields (IGMFs) in the region between our Galaxy and the blazar Mrk 421, from constraints on the delayed GeV flux of pair echos that are emitted by secondary electrons and positrons produced in gamma-gamma interactions between primary TeV gamma-rays and the cosmic infrared background. The distribution of galaxies mapped by the Sloan Digital Sky Survey shows that this region is dominated by a large intergalactic void. We utilize data from long-term, simultaneous GeV-TeV observations by the Fermi Large Area Telescope and the ARGO-YBJ experiment extending over 600 days. For an assumed value of B, we evaluate the daily GeV flux of the pair echo expected from the TeV data, select the dates where this exceeds the Fermi 2-sigma sensitivity, compute the probability that this flux is excluded by the Fermi data for each date, and then combine the probabilities using the inverse normal method. Consequently, we exclude B < 10^(-20.5) G for a field co...

Takahashi, Keitaro; Ichiki, Kiyotomo; Inoue, Susumu; Takami, Hajime

2013-01-01T23:59:59.000Z

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121

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

122

Stable, free-standing Ge nanocrystals  

SciTech Connect (OSTI)

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

123

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect (OSTI)

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

124

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect (OSTI)

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

125

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect (OSTI)

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

126

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect (OSTI)

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

127

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect (OSTI)

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

128

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

129

Über die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16· · 4 H2O bildet sich bei 650°C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwässerung bei 700°C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

130

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network [OSTI]

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

131

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

132

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

133

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect (OSTI)

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

134

Biofuel Research at Brazil Center of Excellence | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

135

Meeting Energy Needs in Brazil |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

136

GE Technology to Help Canada Province Meet Growing Energy Needs  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

137

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

138

Technology makes reds "pop" in LED displays | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

139

Titan propels GE wind turbine research into new territory | ornl...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

140

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect (OSTI)

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect (OSTI)

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

142

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

143

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

144

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)×10-13 sec, ?D±=(7.4-2.0+2.3)×10-13 sec and their ratio ?D±?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD¯ component to charm production, consistent with (35±20)% ?c+ production and some D*± production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

145

3 GeV Injector Design Handbook  

SciTech Connect (OSTI)

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

146

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

147

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuous—random-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

148

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

149

GE Nucleus for Residential Energy Use Education, Home Energy  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

150

TEM studies of Ge nanocrystal formation in PECVD grown  

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We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate–oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?°C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?°C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850?°C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

151

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect (OSTI)

Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

152

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network [OSTI]

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

153

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect (OSTI)

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

154

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect (OSTI)

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

155

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; É. A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

156

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network [OSTI]

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mészáros; M. J. Rees

2011-04-26T23:59:59.000Z

157

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect (OSTI)

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

158

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect (OSTI)

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

159

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

160

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

162

ORNL Partners with GE on New Hybrid | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

163

Intern Shares Insight Into Researchers' Minds |GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

164

A Deep Dive into the Subsea Environment | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

165

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network [OSTI]

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

166

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

167

Ge-on-Si laser operating at room temperature  

E-Print Network [OSTI]

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

168

Helping Astronauts Back on Earth | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

169

Take a Closer Look at the Brain | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

170

Be a part of something bigger than yourself GE Healthcare  

E-Print Network [OSTI]

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

171

Cloud-Based Air Traffic Management Announcement | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

172

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

173

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Broader source: Energy.gov (indexed) [DOE]

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

174

Wind Turbine Transportation in Toyland | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

175

LNG Technology Is in the News | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

176

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

177

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

178

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

179

Pushing Super Materials to the Limit | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

180

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect (OSTI)

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect (OSTI)

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

182

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect (OSTI)

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

183

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

184

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

185

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 ± 0.0003, g2 = 2.0386 ± 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012 cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.45–0.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e. not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

186

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

187

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

188

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

189

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

190

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.3–10 K) and high frequencies (80–210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

191

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

192

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect (OSTI)

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

193

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

194

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network [OSTI]

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

195

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect (OSTI)

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

196

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 40–50 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov…

2004-01-01T23:59:59.000Z

197

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect (OSTI)

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

198

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

199

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

200

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network [OSTI]

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

202

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Broader source: Energy.gov (indexed) [DOE]

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

203

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network [OSTI]

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering –

Shin, Swanee

2009-01-01T23:59:59.000Z

204

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Broader source: Energy.gov [DOE]

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

205

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Broader source: Energy.gov [DOE]

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

206

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect (OSTI)

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

207

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

208

169Tm Mössbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mössbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

209

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect (OSTI)

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

210

Photoinduced aging and viscosity evolution in Se-rich Ge-Se glasses  

SciTech Connect (OSTI)

We propose here to investigate the non-equilibrium viscosity of Ge-Se glasses under and after light irradiation. Ge{sub 10}Se{sub 90} and Ge{sub 20}Se{sub 80} fibers have been aged in the dark and under ambient light, over months. During aging, both the relaxation of enthalpy and the viscosity have been investigated. The viscosity was measured by shear relaxation-recovery tests allowing the measurement of non-equilibrium viscosity. When Ge{sub 10}Se{sub 90} glass fibers are aged under irradiation, a relatively fast fictive temperature decrease is observed. Concomitantly, during aging under irradiation, the non-equilibrium viscosity increases and reaches an equilibrium after two months of aging. This viscosity increase is also observed in Ge{sub 20}Se{sub 80} fibers. Nevertheless, this equilibrium viscosity is far below the viscosity expected at the configurational equilibrium. As soon as the irradiation ceases, the viscosity increases almost instantaneously by about one order of magnitude. Then, if the fibers are kept in the dark, their viscosity slowly increases over months. The analysis of the shear relaxation functions shows that the aging is thermorheologically simple. On the other side, there is no simple relaxation between the shear relaxation functions measured under irradiation and those measured in the dark. These results clearly suggest that a very specific photoinduced aging process occurs under irradiation. This aging is due to photorelaxation. Nevertheless, the viscosity changes are not solely correlated to photoaging and photorelaxation. A scenario is proposed to explain all the observed viscosity evolutions under and after irradiation, on the basis of photoinduced transient defects.

Gueguen, Yann; Sangleboeuf, Jean-Christophe; Rouxel, Tanguy [LARMAUR ERL CNRS 6274, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)] [LARMAUR ERL CNRS 6274, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France); King, Ellyn A.; Lucas, Pierre [Department of Materials Science and Engineering, University of Arizona, 4715 E. Fort Lowell Road, Tucson, Arizona 85712 (United States)] [Department of Materials Science and Engineering, University of Arizona, 4715 E. Fort Lowell Road, Tucson, Arizona 85712 (United States); Keryvin, Vincent [LIMATB EA 4250, Université de Bretagne Sud, Rue de Saint Maudé, 56321 Lorient Cedex (France)] [LIMATB EA 4250, Université de Bretagne Sud, Rue de Saint Maudé, 56321 Lorient Cedex (France); Bureau, Bruno [Equipe Verres et Céramiques, UMR-CNRS 6226 Sciences Chimiques de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)] [Equipe Verres et Céramiques, UMR-CNRS 6226 Sciences Chimiques de Rennes, Université de Rennes 1, Campus de Beaulieu, 35042 Rennes Cedex (France)

2013-08-21T23:59:59.000Z

211

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network [OSTI]

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

212

Analysis of stray radiation produced by the advanced light source (1.9 GeV synchrotron radiation source) at Lawrence Berkeley Laboratory  

SciTech Connect (OSTI)

The yearly environmental dose equivalent likely to result at the closest site boundary from the Advanced Light Source was determined by generating multiple linear regressions. The independent variables comprised quantified accelerator operating parameters and measurements from synchronized, in-close (outside shielding prior to significant atmospheric scattering), state-of-the-art neutron remmeters and photon G-M tubes. Neutron regression models were more successful than photon models due to lower relative background radiation and redundant detectors at the site boundary. As expected, Storage Ring Beam Fill and Beam Crashes produced radiation at a higher rate than gradual Beam Decay; however, only the latter did not include zero in its 95% confidence interval. By summing for all three accelerator operating modes, a combined yearly DE of 4.3 mRem/yr with a 90% CI of (0.04-8.63) was obtained. These results fall below the DOE reporting level of 10 mRem/yr and suggest repeating the study with improved experimental conditions.

Ajemian, R.C. [Univ. of North Carolina, Chapel Hill, NC (United States). Dept. of Environmental Sciences and Engineering

1995-12-31T23:59:59.000Z

213

High bandwidth Ge p-i-n photodetector integrated on Si  

SciTech Connect (OSTI)

The authors present a germanium on silicon p-i-n photodiode for vertical light incidence. For a Ge p-i-n photodetector with a radius of 5 {mu}m a 3 dB bandwidth of 25 GHz is measured at an incident wavelength of 1.55 {mu}m and zero external bias. For a modest reverse bias of 2 V, the 3 dB bandwidth increases to 39 GHz. The monolithically integrated devices are grown on Si with solid source molecular beam epitaxy. The complete detector structure consisting of a highly p-doped Ge buried layer, an intrinsic absorption region, and a highly n-doped top contact layer of Ge/Si is grown in one continuous epitaxial run. A low growth temperature sequence was needed to obtain abrupt doping transitions between the highly doped regions surrounding the intrinsic layer. A theoretical consideration of the 3 dB bandwidth of the Ge detector was used to optimize the layer structure. For a photodiode with 5 {mu}m mesa radius the maximum theoretical 3 dB frequency is 62 GHz with an intrinsic region thickness of 307 nm.

Oehme, M.; Werner, J.; Kasper, E.; Jutzi, M.; Berroth, M. [Institut fuer Halbleitertechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany); Institut fuer Elektrische und Optische Nachrichtentechnik, Universitaet Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart (Germany)

2006-08-14T23:59:59.000Z

214

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

215

Microsoft Word - 1aDOE-ID-12-048 GE EC B3-6.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

8 8 SECTION A. Project Title: Ferritic Martensitic Alloys as Accident Tolerant Fuel Cladding Material for Light Water Reactors - GE Global Research SECTION B. Project Description The GE Global Research (GE-GRC) team, which includes the University of Michigan, Los Alamos National Laboratory, and Global Nuclear Fuels, will demonstrate the feasibility that ferritic materials will be suitable for fuel cladding material in current light water reactors as accident tolerant fuel. The objective is to show feasibility that traditional and nano-structured ferritic/martensitic alloys are candidate materials for fuel cladding in light water reactors. Studies will be conducted in parallel with current zirconium alloys cladding materials. SECTION C. Environmental Aspects / Potential Sources of Impact

216

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

217

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect (OSTI)

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

218

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect (OSTI)

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

219

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect (OSTI)

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

220

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?¯, ?-, ?¯ -, ?0, and ?*±(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?¯, and ?- rates per inelastic event to ?±p data show that ?p rates are consistent with being higher than the ?±p rates, providing evidence of an ss¯ component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?¯, and ??¯ are presented. The xF distributions of the ?, ?¯, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

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221

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect (OSTI)

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

222

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect (OSTI)

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

223

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents [OSTI]

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

224

Partners for progress in HVDC: GE and EPRI  

SciTech Connect (OSTI)

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

225

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

226

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

227

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect (OSTI)

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

228

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12 h could result in crystallized Ge powder samples that contain ultra-small (5–20 nm) particles and larger (50–100 nm) particles. By controlling the reaction time to 24 h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 10–80 nm and lengths up to 1000 nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e. dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

229

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

230

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

231

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect (OSTI)

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

232

Self-Guided Laser Wakefield Acceleration beyond 1 GeV Using Ionization-Induced Injection  

SciTech Connect (OSTI)

The concepts of matched-beam, self-guided laser propagation and ionization-induced injection have been combined to accelerate electrons up to 1.45 GeV energy in a laser wakefield accelerator. From the spatial and spectral content of the laser light exiting the plasma, we infer that the 60 fs, 110 TW laser pulse is guided and excites a wake over the entire 1.3 cm length of the gas cell at densities below 1.5x10{sup 18} cm{sup -3}. High-energy electrons are observed only when small (3%) amounts of CO{sub 2} gas are added to the He gas. Computer simulations confirm that it is the K-shell electrons of oxygen that are ionized and injected into the wake and accelerated to beyond 1 GeV energy.

Clayton, C. E.; Joshi, C.; Lu, W.; Marsh, K. A.; Mori, W. B.; Pak, A.; Tsung, F. S. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ralph, J. E.; Albert, F.; Glenzer, S. H.; Froula, D. H. [L-399, Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551 (United States); Fonseca, R. A.; Martins, S. F.; Silva, L. O. [GoLP/IPFN-LA, Instituto Superior Tecnico, Lisboa (Portugal); Pollock, B. B.; Ross, J. S. [L-399, Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551 (United States); MAE Department, University of California, San Diego, La Jolla, California 92093 (United States)

2010-09-03T23:59:59.000Z

233

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

234

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect (OSTI)

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

235

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

236

Pion Electromagnetic Form Factor up to 10 [GeV/]^2  

E-Print Network [OSTI]

The light-front approach is applied to calculate the electromagnetic current for quark-antiquark bound states for the pion. The pion electromagnetic form factor is obtnaide from the "+" and "-" components of the electromagnetic current in the Drell-Yan frame, with different models of the pi-q\\bar{q} vertex and the results for the pion electromagnetic form factor are compared with the experimental data up to 10 [GeV/c]^2 and anothers hadronic models. The rotational symmetry propreties of the pion electromagnetic current related with the zero-modes in the light-front are investigate.

J. P. B. C. de Melo

2005-07-26T23:59:59.000Z

237

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

238

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect (OSTI)

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

239

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect (OSTI)

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

240

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. O’Dell et al.

1987-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
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241

Diamond turning of Si and Ge single crystals  

SciTech Connect (OSTI)

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

242

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect (OSTI)

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

243

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the Ge–N bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the C–V characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

244

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect (OSTI)

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

245

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect (OSTI)

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

246

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect (OSTI)

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

247

Control of Laser Plasma Based Accelerators up to 1 GeV  

SciTech Connect (OSTI)

This dissertation documents the development of a broadband electron spectrometer (ESM) for GeV class Laser Wakefield Accelerators (LWFA), the production of high quality GeV electron beams (e-beams) for the first time in a LWFA by using a capillary discharge guide (CDG), and a statistical analysis of CDG-LWFAs. An ESM specialized for CDG-LWFAs with an unprecedented wide momentum acceptance, from 0.01 to 1.1 GeV in a single shot, has been developed. Simultaneous measurement of e-beam spectra and output laser properties as well as a large angular acceptance (> {+-} 10 mrad) were realized by employing a slitless scheme. A scintillating screen (LANEX Fast back, LANEX-FB)--camera system allowed faster than 1 Hz operation and evaluation of the spatial properties of e-beams. The design provided sufficient resolution for the whole range of the ESM (below 5% for beams with 2 mrad divergence). The calibration between light yield from LANEX-FB and total charge, and a study on the electron energy dependence (0.071 to 1.23 GeV) of LANEX-FB were performed at the Advanced light source (ALS), Lawrence Berkeley National Laboratory (LBNL). Using this calibration data, the developed ESM provided a charge measurement as well. The production of high quality electron beams up to 1 GeV from a centimeter-scale accelerator was demonstrated. The experiment used a 310 {micro}m diameter gas-filled capillary discharge waveguide that channeled relativistically-intense laser pulses (42 TW, 4.5 x 10{sup 18} W/cm{sup 2}) over 3.3 centimeters of sufficiently low density ({approx_equal} 4.3 x 10{sup 18}/cm{sup 3}) plasma. Also demonstrated was stable self-injection and acceleration at a beam energy of {approx_equal} 0.5 GeV by using a 225 {micro}m diameter capillary. Relativistically-intense laser pulses (12 TW, 1.3 x 10{sup 18}W/cm{sup 2}) were guided over 3.3 centimeters of low density ({approx_equal} 3.5 x 10{sup 18}/cm{sup 3}) plasma in this experiment. A statistical analysis of the CDG-LWFAs performance was carried out. By taking advantage of the high repetition rate experimental system, several thousands of shots were taken in a broad range of the laser and plasma parameters. An analysis program was developed to sort and select the data by specified parameters, and then to evaluate performance statistically. The analysis suggested that the generation of GeV-level beams comes from a highly unstable and regime. By having the plasma density slightly above the threshold density for self injection, (1) the longest dephasing length possible was provided, which led to the generation of high energy e-beams, and (2) the number of electrons injected into the wakefield was kept small, which led to the generation of high quality (low energy spread) e-beams by minimizing the beam loading effect on the wake. The analysis of the stable half-GeV beam regime showed the requirements for stable self injection and acceleration. A small change of discharge delay t{sub dsc}, and input energy E{sub in}, significantly affected performance. The statistical analysis provided information for future optimization, and suggested possible schemes for improvement of the stability and higher quality beam generation. A CDG-LWFA is envisioned as a construction block for the next generation accelerator, enabling significant cost and size reductions.

Nakamura, Kei

2007-12-03T23:59:59.000Z

248

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect (OSTI)

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

249

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect (OSTI)

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

250

LArGe - Active background suppression using argon scintillation for the GERDA $0\  

E-Print Network [OSTI]

LArGe is a GERDA low-background test facility to study novel background suppression methods in a low-background environment, for future application in the GERDA experiment. Similar to GERDA, LArGe operates bare germanium detectors submersed into liquid argon (1 m$^3$, 1.4 tons), which in addition is instrumented with photomultipliers to detect argon scintillation light. The scintillation signals are used in anti-coincidence with the germanium detectors to effectively suppress background events that deposit energy in the liquid argon. The background suppression efficiency was studied in combination with a pulse shape discrimination (PSD) technique using a BEGe detector for various sources, which represent characteristic backgrounds to GERDA. Suppression factors of a few times $10^3$ have been achieved. First background data of LArGe with a coaxial HPGe detector (without PSD) yield a background index of (0.12$-$4.6)$\\cdot 10^{-2}$ cts/(keV$\\cdot$kg$\\cdot$y) (90% C.L.), which is at the level of GERDA Phase I. Fu...

Agostini, M; Budjáš, D; Cattadori, C; Gangapshev, A; Gusev, K; Heisel, M; Junker, M; Klimenko, A; Lubashevskiy, A; Pelczar, K; Schönert, S; Smolnikov, A; Zuzel, G

2015-01-01T23:59:59.000Z

251

Study of plutonium disposition using existing GE advanced Boiling Water Reactors  

SciTech Connect (OSTI)

The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.

Not Available

1994-06-01T23:59:59.000Z

252

Pair-dominated GeV-optical flash in GRB 130427A  

E-Print Network [OSTI]

We show that the light curve of the double GeV+optical flash in GRB 130427A is consistent with radiation from the blast wave in a wind-type medium with density parameter $A=\\rho r^2\\sim 5\\times 10^{10}$ g cm$^{-1}$. The peak of the flash is emitted by copious $e^\\pm$ pairs created and heated in the blast wave; our first-principle calculation determines the pair-loading factor and temperature of the shocked plasma. Using detailed radiative transfer simulations we reconstruct the observed double flash. The optical flash is dominated by synchrotron emission from the thermal plasma behind the forward shock, and the GeV flash is produced via inverse Compton (IC) scattering by the same plasma. The seed photons for IC scattering are dominated by the prompt MeV radiation during the first tens of seconds, and by the optical to X-ray afterglow thereafter. IC cooling of the thermal plasma behind the forward shock reproduces all GeV data from a few seconds to $\\sim 1$ day. We find that the blast-wave Lorentz factor at th...

Vurm, Indrek; Beloborodov, Andrei M

2014-01-01T23:59:59.000Z

253

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect (OSTI)

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

254

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network [OSTI]

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

255

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect (OSTI)

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

256

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

257

€18.5 Million in New Research Program Funding Announced, GE...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

258

Using 3D Painting to Build and Repair Parts | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

259

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network [OSTI]

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

260

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect (OSTI)

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect (OSTI)

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

262

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

263

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

264

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect (OSTI)

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

265

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect (OSTI)

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

266

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?°C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02–2 ML s?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s?1 to 9.8 nm at R = 2 ML s?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

267

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect (OSTI)

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

268

Mid infrared optical properties of Ge/Si quantum dots with different doping level  

SciTech Connect (OSTI)

Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya. [St. Petersburg State Polytechnic University, Polytechnicheskaya str. 29, St. Petersburg (Russian Federation); Tonkikh, A. A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Danilov, S. N. [University of Regensburg, Regensburg (Germany)

2013-12-04T23:59:59.000Z

269

({lambda}, p) Spectrum Analysis in p+A Interactions at 10 GeV/c  

SciTech Connect (OSTI)

Experimental data from the 2m propane bubble chamber have been analyzed for exotic baryon states search. A number of peculiarities were found in the effective mass spectra of: {lambda}{pi}+({sigma}*+(1382),PDG), {lambda}p and {lambda}pp subsystems. A few events detected on the photographs of the propane bubble chamber exposed to a 10 GeV/c proton beam, were interpreted as S=-2 H0 light(

Aslanyan, P. Zh. [Joint Institute for Nuclear Research, Dubna (Russian Federation); Yerevan State of University (Russian Federation); Emelyanenko, V. N. [Joint Institute for Nuclear Research, Dubna (Russian Federation)

2007-06-13T23:59:59.000Z

270

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect (OSTI)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

271

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

272

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect (OSTI)

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

273

Correlation of defect centers with second-harmonic generation in Ge-doped and Ge–P-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; Österberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

274

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

275

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect (OSTI)

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

276

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

277

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network [OSTI]

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

278

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network [OSTI]

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

279

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

280

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network [OSTI]

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network [OSTI]

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

282

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network [OSTI]

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e(±)X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

283

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

284

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network [OSTI]

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

285

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network [OSTI]

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

286

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network [OSTI]

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

287

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network [OSTI]

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

288

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect (OSTI)

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

289

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge  

SciTech Connect (OSTI)

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

2012-12-15T23:59:59.000Z

290

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI  

Open Energy Info (EERE)

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified

291

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

292

Titan Propels GE Wind Turbine Research into New Territory | ornl.gov  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest

293

VEA-0016 - In the Matter of GE Appliances | Department of Energy  

Broader source: Energy.gov (indexed) [DOE]

6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation

294

BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.

295

Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC  

Science Journals Connector (OSTI)

The magnetism of the Mn+1AXn phase, Cr2GeC, and its Mn-doped system, (Cr1?xMnx)2GeC (x?0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, TC, and the spontaneous moment, ps, increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of peff/ps, where peff is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped Cr2GeC can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

Z. Liu; T. Waki; Y. Tabata; H. Nakamura

2014-02-28T23:59:59.000Z

296

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect (OSTI)

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

297

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect (OSTI)

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

298

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures  

SciTech Connect (OSTI)

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2012-12-10T23:59:59.000Z

299

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect (OSTI)

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z

300

Nanoporosity induced by ion implantation in deposited amorphous Ge thin films  

SciTech Connect (OSTI)

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

2012-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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301

Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method  

Science Journals Connector (OSTI)

This paper presents a theoretical study of Si and Ge atom dangling bond defects in a-Si,Ge alloys. We use a tight-binding Hamiltonian, and a structural model based on a cluster Bethe Lattice. The central clust...

S. Y. Lin; G. Lucovsky

1985-01-01T23:59:59.000Z

302

A Systematic Investigation of the Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System  

Science Journals Connector (OSTI)

Nb3Ge films were prepared by coevaporation of Nb and Ge from two sources under well defined and controlled conditions. We have studied the formation of the A15 phase by varying the processing parameters-compositi...

H. U. Habermeier; P. Chaudhari

1981-01-01T23:59:59.000Z

303

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect (OSTI)

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

304

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe  

Science Journals Connector (OSTI)

Abstract The disilane (Si2H6) + germane (GeH4) chemistry has been evaluated for the reduced pressure (2660 Pa, i.e. 20 Torr), low temperature growth of intrinsic and heavily boron-doped SiGe. A SiGe growth rate “plateau” has been evidenced between 650 °C and 750 °C. Meanwhile, the Ge concentration x was rather steady in the 500 °C–700 °C range. A linear increase of the SiGe growth rate with the GeH4 flow occurred at 500 °C, 550 °C and 675 °C. The increase of x with the GeH4 mass-flow otherwise changed from linear to sub-linear as the growth temperature was reduced from 675 °C down to 500 °C–550 °C. Be it with Si2H6 or SiH4, the SiGe growth rate fell by a factor of ~ 7–8 when switching from 550 °C to 500 °C. For the same x, growth rate was nevertheless 3–9 times higher with Si2H6 than with SiH4. We have also studied the impact of B2H6 on the 500 °C growth kinetics of SiGe with Si2H6. Large substitutional boron concentrations were obtained in single-crystalline SiGe:B layers: [B]subst. ~ 3.7 × 1020 cm?3. Surface B atoms otherwise catalysed H desorption, resulting in growth rates ~ 5 times higher for SiGe:B than for intrinsic SiGe. Finally, a monotonic decrease of the SiGe(:B) growth rate together with a significant increase of the Ge concentration were evidenced at 500 °C and 675 °C when adding \\{HCl\\} to the gaseous mixture. At 500 °C, SiGe:B growth rates still stayed 3 times higher than the intrinsic SiGe ones. Adding \\{HCl\\} had otherwise no clear impact on [B]subst.

J.M. Hartmann; V. Benevent; M. Veillerot; A. Halimaoui

2014-01-01T23:59:59.000Z

305

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV  

E-Print Network [OSTI]

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV

Coet, P

1975-01-01T23:59:59.000Z

306

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar  

E-Print Network [OSTI]

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited in the suboxide on the GeNW, whose germanium- enrichment surface was obtained to form a germanide contact at low

Jo, Moon-Ho

307

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced  

E-Print Network [OSTI]

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced one-step route was developed to synthesize crystalline CuGeO3 nanowire/graphene composites (CGCs). Crystalline CuGeO3 nanowires were tightly covered and anchored by graphene sheets, forming a layered structure

Lin, Zhiqun

308

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires  

Science Journals Connector (OSTI)

We experimentally studied the thermoelectric power factor of hole gas in individual Ge–Si core–shell nanowires with Ge core diameters ranging from 11 to 25 nm. The Ge cores are dopant-free, but the Fermi level in the cores is pinned by surface and defect ...

Jaeyun Moon; Ji-Hun Kim; Zack C.Y. Chen; Jie Xiang; Renkun Chen

2013-02-08T23:59:59.000Z

309

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001)  

E-Print Network [OSTI]

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001) Cristian V that dimer- vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(0 0 1), but not on Ge(0 0 1 the vacancies on Si(0 0 1) and Ge(0 0 1). We identify three energetic parameters which characterize the DVs

Ciobanu, Cristian

310

Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions  

SciTech Connect (OSTI)

We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed by annealing in a vacuum at 500 C. In these conditions, the MgO layer grows epitaxially on Ge(001) with the [110] direction parallel to the [100] direction of Ge, at variance with the cube-on-cube growth on Si(001) and GaAs(001). However, in some cases, the cube-on-cube growth mode of MgO on Ge competes with the mode involving a 45{sup o} rotation, as revealed by transmission electron microscopy and photoelectron diffraction data on MgO films grown at 300 C without postannealing, and on p-doped Ge substrates. For the Fe overlayer, in all the cases reported, room temperature growth followed by annealing up to 200 C gives rise to a sharp interface and the well-known 45{sup o} rotation of the Fe lattice with respect to the MgO lattice.

Petti, D. [Politecnico di Milano; Cantoni, M. [Politecnico di Milano; Rinaldi, C. [Politecnico di Milano; Brivio, S. [Politecnico di Milano; Bertacco, R. [Politecnico di Milano; Gazquez Alabart, Jaume [ORNL; Varela del Arco, Maria [ORNL

2011-01-01T23:59:59.000Z

311

Structure determination of Ag-Ge-S glasses using neutron diffraction  

Science Journals Connector (OSTI)

The structure of the superionic glass system (Ag2S)x(GeS2)1-x, for three compositions x=0.3, 0.4, 0.5, has been studied using neutron diffraction, and isotopic-substitution neutron-diffraction experiments have been performed on three silver isotope-substituted (107Ag,natAg,109Ag) samples of the composition (Ag2S)0.5(GeS2)0.5. The average short-range orderings of Ge-S, Ag-S, and Ge-Ag correlations were identified in the radial distribution functions for the isotopically substituted system of (Ag2S)0.5(GeS2)0.5. From the first and second differences in the three sets of isotopic-substitution neutron-diffraction data, the other three partial correlations (Ag-Ag, Ge-Ge, and S-S), were also identified. By examining unusually broad peaks in the Ag-Ag correlation function, it was concluded that the Ag-Ag distribution was rather homogeneous. We were also able to obtain further information by combining the first and second difference analyses, resulting in a structural model of a slightly elongated GeS4 tetrahedron with the local environment of Ag+ ions being threefold coordination by nonbridging sulphur ions. The medium-range order of the host framework was found to be a chainlike structure of linked corner-sharing GeS4 tetrahedra. Substantial changes in the first and second peaks in the distinct scattering functions i(Q) were found with composition and also with isotopic substitution. It was possible to explain the trends in the changes of the heights of these peaks in the structure factor by applying the void model for the first sharp diffraction peak. © 1996 The American Physical Society.

J. H. Lee; A. P. Owens; A. Pradel; A. C. Hannon; M. Ribes; S. R. Elliott

1996-08-01T23:59:59.000Z

312

Wide-band neutrino beams at 1000 GeV  

SciTech Connect (OSTI)

In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train. (WHK)

Malensek, A.; Stutte, L.

1983-04-11T23:59:59.000Z

313

Exotic decays of the 125 GeV Higgs boson  

Science Journals Connector (OSTI)

We perform an extensive survey of nonstandard Higgs decays that are consistent with the 125 GeV Higgs-like resonance. Our aim is to motivate a large set of new experimental analyses on the existing and forthcoming data from the Large Hadron Collider (LHC). The explicit search for exotic Higgs decays presents a largely untapped discovery opportunity for the LHC collaborations, as such decays may be easily missed by other searches. We emphasize that the Higgs is uniquely sensitive to the potential existence of new weakly coupled particles and provide a unified discussion of a large class of both simplified and complete models that give rise to characteristic patterns of exotic Higgs decays. We assess the status of exotic Higgs decays after LHC run I. In many cases we are able to set new nontrivial constraints by reinterpreting existing experimental analyses. We point out that improvements are possible with dedicated analyses and perform some preliminary collider studies. We prioritize the analyses according to their theoretical motivation and their experimental feasibility. This document is accompanied by a Web site that will be continuously updated with further information [http://exotichiggs.physics.sunysb.edu].

David Curtin; Rouven Essig; Stefania Gori; Prerit Jaiswal; Andrey Katz; Tao Liu; Zhen Liu; David McKeen; Jessie Shelton; Matthew Strassler; Ze’ev Surujon; Brock Tweedie; Yi-Ming Zhong

2014-10-13T23:59:59.000Z

314

Potential improvements in SiGe radioisotope thermoelectric generator performance  

SciTech Connect (OSTI)

In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

Mowery, A.L. [4 Myrtle Bank Lane, Hilton Head Island, South Carolina, 29926-2650 (United States)

1999-01-01T23:59:59.000Z

315

APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE  

SciTech Connect (OSTI)

A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

2001-01-01T23:59:59.000Z

316

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect (OSTI)

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

317

Low-temperature recrystallization of Ge nanolayers on ZnSe  

SciTech Connect (OSTI)

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru; Fedosenko, E. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2007-05-15T23:59:59.000Z

318

Radial Flow in Au+Au Collisions at E=0.25-1.15 A GeV  

E-Print Network [OSTI]

A systematic study of energy spectra for light particles emitted at midrapidity from Au+Au collisions at E=0.25-1.15 A GeV reveals a significant non-thermal component consistent with a collective radial flow. This component is evaluated as a function of bombarding energy and event centrality. Comparisons to Quantum Molecular Dynamics (QMD) and Boltzmann-Uehling-Uhlenbeck (BUU) models are made for different equations of state.

M. A. Lisa; S. Albergo; F. Bieser; F. P. Brady; Z. Caccia; D. A. Cebra; A. D. Chacon; J. L. Chance; Y. Choi; S. Costa; J. B. Elliott; M. L. Gilkes; J. A. Hauger; A. S. Hirsch; E. L. Hjort; A. Insolia; M. Justice; D. Keane; J. Kintner; H. S. Matis; M. McMahan; C. McParland; D. L. Olson; M. D. Partlan; N. T. Porile; R. Potenza; G. Rai; J. Rasmussen; H. G. Ritter; J. Romanski; J. L. Romero; G. V. Russo; R. Scharenberg; A. Scott; Y. Shao; B. K. Srivastava; T. J. M. Symons; M. Tincknell; C. Tuve; S. Wang; P. Warren; G. D. Westfall; H. H. Wieman; K. Wolf

1995-02-09T23:59:59.000Z

319

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method  

SciTech Connect (OSTI)

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 ? cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)] [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)] [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

2013-10-21T23:59:59.000Z

320

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.  

Office of Science (SC) Website

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » July 2013 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists at University of Texas, Austin, accelerate electrons to 2 GeV in table top apparatus. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Neil Fazel The inside of the University of Texas, Austin, vacuum chamber where

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Broader source: Energy.gov (indexed) [DOE]

859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher

322

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Broader source: Energy.gov (indexed) [DOE]

Secretary Chu to Tour GE Global Research Advanced Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

323

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Broader source: Energy.gov (indexed) [DOE]

Tour GE Global Research Advanced Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

324

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado  

Broader source: Energy.gov (indexed) [DOE]

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's

325

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Broader source: Energy.gov (indexed) [DOE]

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

326

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY (GE) FOR AN  

Broader source: Energy.gov (indexed) [DOE]

(GE) FOR AN (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS TO INVENTIONS MADE UNDER COOPERATIVE AGREEMENT NUMBER DE-FC04-2002AL68080, DOE WAIVER NO. W(A) 03-003. The Petitioner, GE, has requested a waiver of all domestic and foreign patent rights to inventions that may be conceived or first actually reduced to practice in the course of GE's work under Cooperative Agreement Number DE-FC04-2002AL68080 entitled "Advanced Hybrid Propulsion and Energy Management System for High Efficiency, Off- Highway, 320 Ton Class, Diesel Electric Haul Trucks." The work to be done under the cooperative agreement will be the design, fabrication and demonstration of a hybrid propulsion and energy management system for off-highway vehicles used in mining applications. The hybrid propulsion system would allow for an

327

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Broader source: Energy.gov (indexed) [DOE]

181 BETWEEN GE GLOBAL AND 181 BETWEEN GE GLOBAL AND DOE; W(A)-09-016; CH-1485 The Petitioner, GE GLOBAL, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE GLOBAL arising from its participation under the above referenced cooperative agreement entitled "300°c Capable Electronics Platform and Temperature Sensor System for Enhanced Geothermal Systems." The objective of the project is development of geothermal well bore monitoring applications, through the development of SiC based electronics and ceramic packaging capable of sustained operation at temperatures up to 300°C and 10km depth. The total cost of the project is approximately $2 million with the Petitioner

328

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

329

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56 MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

330

Theoretical study of the thermoelectric properties of SiGe nanotubes  

E-Print Network [OSTI]

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube.

Wei, J; Tan, X J; Cheng, L; Zhang, J; Fan, D D; Shi, J; Tang, X F

2014-01-01T23:59:59.000Z

331

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition  

Science Journals Connector (OSTI)

Effects of ion energy on the optical, microstructure, and electrical properties of Ge films prepared by ion-beam-assisted deposition were investigated. The absorption edge is found to...

Leng, Jian; Zhao, Li; Ji, Yiqin; Liu, Huasong; Zhuang, Kewen

2014-01-01T23:59:59.000Z

332

5 Top Trends From the Women and Technology Symposium | GE Global...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

disciplines. So this year, we wanted to take it to the next level. Why not leverage our "Mini-GE" (Chairmen Jeff Immelt's nickname for our India technology center), where all of...

333

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy  

SciTech Connect (OSTI)

The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

334

Natural SnGeS3 from Radvanice near Trutnov (Czech Republic) :  

Science Journals Connector (OSTI)

...diffractometer HZG4/TuR (CuKalpha radiation, stepscanning). To minimize...graphite monochromatized MoKalpha-radiation. Data collection parameters...zaoek Ondurs, P. (1997): Naturally occuring germanium compounds, GeSnS3...

Jiri SEJKORA; Peter BERLEPSCH; Emil MAKOVICKY; Tonci BALI?-ZUNI?

335

Particle production models in HETC88 in the energy range 3 to 30 GeV  

SciTech Connect (OSTI)

HETC88 is the latest version of the high-energy transport code HETC that has been used to provide accelerator shield and calorimeter design data for many years. (See Refs. 3, 4, and 5 and the refs. given therein). This version of the code is described and results are compared with experimental data in Ref. 1. The high-energy particle production model in HETC88 is a multi-chain fragmentation model based on the work of J. Ranft and S. Ritter (see Ref. 6 and the refs. given therein). The fragmentation model used in HETC88 is described and compared with experimental data. In HETC88, the fragmentation model is used at energies {ge} 5 GeV, a scaling model is used in energy range 3 to 5 GeV, and the intranuclear cascade model is used at energies {le} 3 GeV. 10 refs., 1 fig.

Alsmiller, R.G. Jr.; Alsmiller, F.S.

1991-01-01T23:59:59.000Z

336

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network [OSTI]

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

337

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network [OSTI]

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

338

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si  

E-Print Network [OSTI]

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...

Sun, Xiaochen

339

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect (OSTI)

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z

340

Ge-on-Si Integrated Photonics: New Tricks from an Old Semiconductor  

E-Print Network [OSTI]

We review recent progress in Ge active photonic devices for electronic-photonic integration on Si, demonstrating new tricks in optoelectronics from this “old” semiconductor material used for the first transistor more than ...

Jifeng, Liu

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network [OSTI]

We report a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8 GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction ...

Conrad, Janet

342

Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge  

E-Print Network [OSTI]

Li, A. P. et al. Magnetism in Mn x Ge 1-x semiconductorsElectronic Structure and Magnetism for Mn in Amorphous Sistructure that determines magnetism. Figure 3 shows XAS data

Zeng, Li

2010-01-01T23:59:59.000Z

343

Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism  

SciTech Connect (OSTI)

Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2013-02-21T23:59:59.000Z

344

Pushing the Performance Limits of SiGe HBTTechnology Marwan Khatera  

E-Print Network [OSTI]

noise, device matching,and power performance.The performance evolution ofSiGe HBT technologyin recent. ECS Transactions, 3 (7) 341-353 (2006) 10.1149/1.2355832, copyright The Electrochemical Society 341

Rieh, Jae-Sung

345

Electronic structure of the Ge/RbF/GaAs(100) heterostructure: LCAO calculations  

Science Journals Connector (OSTI)

The electronic structure of Ge/RbF/GaAs(100) system ... known however about their reactivity. In these calculations the reactive contacts were postulated and modelled. ... obtained results, compared with those of...

Barbara Stankiewicz

346

Investigation of lateral gated quantum devices in Si/SiGe heterostructures  

E-Print Network [OSTI]

Quantum dots in Si/SiGe have long spin decoherence times, due to the low density of nuclear spins and weak coupling between nuclear and electronic spins. Because of this, they are excellent candidates for use as solid state ...

Lai, Andrew P. (Andrew Pan)

2013-01-01T23:59:59.000Z

347

Super-Resolution ROM Disc Using GeAl Reflective Absorption Layer  

Science Journals Connector (OSTI)

We have developed a super-resolution ROM disc using a newly designed GeAl reflective absorption layer. The optical resolution limit in high readout power expanded more than 1.5 times...

Aoki, Kazuhiko; Tanabe, Hideki; Ohkubo, Shuichi; Kariyada, Eiji; Katayama, Ryuichi; Yamanaka, Yutaka

348

Optical gain and lasing from band-engineered Ge-on-Si at room temperature  

E-Print Network [OSTI]

We present theoretical modeling and experimental results of optical gain and lasing from tensile-strained, n[superscript +] Ge-on-Si at room temperature. Compatible with silicon CMOS, these devices are ideal for large-scale ...

Liu, Jifeng

349

Black GE based on crystalline/amorphous core/shell nanoneedle arrays  

SciTech Connect (OSTI)

Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

2014-03-04T23:59:59.000Z

350

Tunneling current modulation by Ge incorporation into Si oxide films for flash memory applications  

SciTech Connect (OSTI)

Current-voltage characteristic for a Ge-incorporated Si oxide was investigated. Current enhancement was observed for the electric field larger than 10 MV/cm. Such a current enhancement only under high electric field is expected to improve programming performance without deteriorating reading performance. From secondary ion mass spectrometry and hard x-ray photoelectron spectroscopy analyses and current simulation, it is concluded that the Ge impurity in Ge{sup 4+} state around the tunnel oxide/substrate interface enhances the current by trap-assisted tunneling. The programming current enhancement induced by the Ge incorporation is expected to be one of the promising solutions for the next-generation flash memory.

Ito, Toshihide; Mitani, Yuuichiro; Nakasaki, Yasushi; Koike, Masahiro [Corporate Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 212-8582 (Japan); Konno, Takuya; Matsuba, Hiroshi [Corporate Manufacturing Engineering Center, Toshiba Corporation, Isogo-ku, Yokohama 235-0017 (Japan); Kai, Tetsuya; Kaneko, Wakana; Ozawa, Yoshio [Device Process Development Center, Corporate Research and Development Center, Toshiba Corporation, Isogo-ku, Yokohama 235-8522 (Japan)

2012-02-13T23:59:59.000Z

351

Nucleation Of Ge 3D-islands On Pit-patterned Si Substrates  

SciTech Connect (OSTI)

Joint experimental and theoretical study of Ge nanoislands growth on pit-patterned Si substrate is carried out. Si substrates that have been templated by means of electron beam lithography and reactive ion etching have been used to grow Ge by molecular-beam epitaxy. Atomic-force-microscopy studies show that at Si(100) substrate temperature 550 deg. C, Ge nanoislands are formed at the pits' edges, rather than between the pits. The effect is interpreted in terms of energy barrier, that is formed near the edge of a pit and prevents Ge transport inside the pit. By molecular dynamics calculations the value of the energy barrier 0.9 eV was obtained.

Novikov, P. L.; Smagina, J. V.; Vlasov, D. Yu.; Deryabin, A. S.; Kozhukhov, A. S.; Dvurechenskii, A. V. [Institute of Semiconductor Physics SB RAS, Pr. ac. Lavrent'eva, 13, 630090 Novosibirsk (Russian Federation)

2011-12-23T23:59:59.000Z

352

Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy  

SciTech Connect (OSTI)

Single crystal epitaxial Ge{sub 1?x}Sn{sub x} alloys with atomic fractions of tin up to x = 0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge{sub 1?x}Sn{sub x} alloys formed high quality, coherent, strained layers at growth temperatures below 250 °C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge{sub 1?x}Sn{sub x} alloys versus the composition of Sn have been determined.

Bhargava, Nupur; Coppinger, Matthew; Prakash Gupta, Jay; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Wielunski, Leszek [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)] [Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854 (United States)

2013-07-22T23:59:59.000Z

353

Structure of the novel ternary hydrides Li4Tt2D (Tt = Si and Ge)  

Science Journals Connector (OSTI)

The crystal structures of novel Li4Tt2D (Tt = Si and Ge) ternary hydrides were solved using neutron powder diffraction data. All hydrogen atoms were found to occupy Li6-octahedral interstices.

Wu, H.

2007-01-15T23:59:59.000Z

354

Time-resolved plasma measurements in Ge-doped silica exposed to infrared femtosecond laser  

SciTech Connect (OSTI)

Using a time-resolved interferometric technique, we study the laser-induced carrier-trapping dynamics in SiO{sub 2} and Ge-doped SiO{sub 2}. The fast trapping of electrons in the band gap is associated with the formation of self-trapped excitons (STE). The STE trapping is doping dependent in SiO{sub 2}. The mean trapping time of electrons excited in the conduction band was found to be significantly lower in Ge-doped silica (75 {+-} 5 fs) when compared to pure silica (155 {+-} 5 fs). At our concentration level, this indicates that the plasma properties are determined by the presence of easily ionizable states such as the presence of Ge atoms in the glass network. Therefore, we suggest that in Ge-doped silica there exist an additional trapping pathway that leads to a significantly faster excitons trapping and a higher plasma density when compared to undoped silica.

Lancry, M.; Poumellec, B. [LPCES/ICMMO, UMR CNRS-UPS 8182, Universite Paris Sud 11, Batiment 410, 91405 Orsay (France); Groothoff, N.; Canning, J. [Interdisciplinary Photonics Laboratories, School of Chemistry, University of Sydney, 206 NIC, ATP, Eveleigh, NSW, 1340 (Australia); Guizard, S.; Fedorov, N. [Laboratoire des Solides Irradies/CEA IRAMIS, Ecole Polytechnique, Palaiseau (France)

2011-12-15T23:59:59.000Z

355

New Global Oil & Gas Hub in Oklahoma City | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation GE Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation New Center to...

356

OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng  

E-Print Network [OSTI]

at the University of Toledo (UT) in the fabrication of high-efficiency triple, tandem and single-junction solar with 12.5% initial efficiency and 10.7% stable efficiency, tandem-junction a-Si/a-SiGe solar cells with 12.9% initial efficiency, and single-junction a-SiGe solar cells with 12.5-13% initial efficiency and 10

Deng, Xunming

357

In-beam measurement of E0 matrix element in Se72 and Ge72  

Science Journals Connector (OSTI)

A 0 + state in Se72 at 936 keV has been identified through in-beam measurements with Ge70(?,2n)Se72. The beam-related time distribution of conversion electrons from the 936-keV E0 transition yields a half-life of 19.3±0.4 ns. With a Ge72 target and an ?-beam sweeper the half-life of the 690-keV E0 transition in Ge72 was 404±45 ns. For both transitions identification of the emitting nucleus was obtained from the energy separation of the K and L electrons. The KL intensity ratio was intermediate between the theoretical results of Hager and Seltzer and those of Church and Weneser. The reduced E0 nuclear matrix elements are ?=(0.304±0.003)(1-5.01×10-3f) and ?=0.095±0.005 for Se72 and Ge72, respectively, which are 0.77 (for f?40) and 0.24, respectively, of Wilkinson's suggested single-particle unit for E0 matrix elements. The f is the 0??2 enhancement.[NUCLEAR REACTIONS Ge70(?,2n), E=27.5 MeV, Ge72(?,??) and Ge72(?,pn), E=27.5 MeV; measured in-beam ce spectra and time distributions; deduced T12 and E0 matrix element for 936-keV 0+ state in Se72 and 690-keV 0+ state in Ge72; compared KL ratio with theories.

James E. Draper; Nicholas S. P. King; Walter G. Wyckoff

1974-03-01T23:59:59.000Z

358

Design of a short electro-optic modulator based on SiGe HBT structure  

E-Print Network [OSTI]

­68980C­10 (2008). 3. A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu­17113 (2007). 7. S. Deng, Z. R. Huang, and J. F. McDonald, "Design of high efficiency multi-GHz SiGe HBT.-S. Rieh, D. Greenberg, A. Stricker, and G. Freeman, "Scaling of SiGe heterojunction bipolar transistors

Huang, Zhaoran "Rena"

359

Elastic neutron-scattering experiments at the Geesthacht Neutron Facility (GeNF)  

Science Journals Connector (OSTI)

The Geesthacht Neutron Facility (GeNF) comprises experimental facilities for elastic neutron scattering for materials research and engineering problems as well as for environmental research purposes at the research reactor FRG-1. The experimental facilities for elastic neutron-scattering experiments at GeNF, most of which can be optimally used with polarized neutrons, will be presented. They are open to national and international users from universities and other research institutes at no cost.

R Kampmann; R Wagner

1997-01-01T23:59:59.000Z

360

Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)  

SciTech Connect (OSTI)

We have studied ferromagnetism of Mn-implanted epitaxial Ge films on silicon. The Ge films were grown by ultrahigh vacuum chemical vapor deposition using a mixture of germane (GeH{sub 4}) and methylgermane (CH{sub 3}GeH{sub 3}) gases with a carbon concentration of less than 1 at. %, and observed surface rms roughness of 0.5 nm, as measured by atomic force microscopy. Manganese ions were implanted in epitaxial Ge films grown on Si (100) wafers to an effective concentration of 16, 12, 6, and 2 at. %. Superconducting quantum interference device measurements showed that only the three highest Mn concentration samples are ferromagnetic, while the fourth sample, with [Mn] = 2 at. %, is paramagnetic. X-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements indicate that localized Mn moments are ferromagnetically coupled below the Curie temperature. Isothermal annealing of Mn-implanted Ge films with [Mn] = 16 at. % at 300 C for up to 1200 s decreases the magnetization but does not change the Curie temperature, suggesting that the amount of the magnetic phase slowly decreases with time at this anneal temperature. Furthermore, transmission electron microscopy and synchrotron grazing incidence x-ray diffraction experiments show that the Mn-implanted region is amorphous, and we believe that it is this phase that is responsible for the ferromagnetism. This is supported by our observation that high-temperature annealing leads to recrystallization and transformation of the material into a paramagnetic phase.

Guchhait, S.; Jamil, M.; Ohldag, H.; Mehta, A.; Arenholz, E.; Lian, G.; Li Fatou, A.; Ferrer, D. A.; Markert, J. T.; Colombo, L.; Banerjee, S. K.

2011-01-05T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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361

26. 1% solar cell efficiency for Ge mechanically stacked under GaAs  

SciTech Connect (OSTI)

We have processed a diffused Ge wafer into a Ge concentrator solar cell and mechanically stacked it under a GaAs cell fabricated by Varian. We measured this stack's efficiency to be 26.1% for terrestrial air mass 1.5 direct (AM1.5D) conditions at a 285 x concentration ratio. We showed that this efficiency is limited by optical absorption in the Varian GaAs cell caused by high 2--4 (10/sup 18/) cm/sup -3/ substrate doping. We used a 2 x 10/sup 17/ cm/sup -3/ doped GaAs filter to estimate the stack efficiency as 27.4%, which would be achieved with the same Varian GaAs cell formed on a lower doped substrate. We project efficiencies assuming the best properties reported for a GaAs device. This gives a 29.6% efficiency for an improved, planar Ge cell and 31.6% efficiency for a proposed point contact geometry for the Ge cell. The corresponding space (AM0) efficiencies at a 159 x concentration ratio range from the 23.4% value we measured on the stack up to 28.4% projected for the point contact Ge place under the best GaAs cell. We showed that Ge cells give higher efficiencies than Si when stacked under GaAs.

Partain, L.D.; Kuryla, M.S.; Weiss, R.E.; Ransom, R.A.; McLeod, P.S.; Fraas, L.M.; Cape, J.A.

1987-10-01T23:59:59.000Z

362

Wave-function engineering and absorption spectra in Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06}/Si{sub 0.16}Ge{sub 0.84} strained on relaxed Si{sub 0.10}Ge{sub 0.90} type I quantum well  

SciTech Connect (OSTI)

We theoretically investigate germanium-tin alloy as a semiconductor for the design of near infrared optical modulators in which the Ge{sub 1?x}Sn{sub x} alloy is the active region. We have calculated the electronic band parameters for heterointerfaces between strained Ge{sub 1?x}Sn{sub x} and relaxed Si{sub 1?y}Ge{sub y}. Then, a type-I strain-compensated Si{sub 0.10}Ge{sub 0.90}/Si{sub 0.16}Ge{sub 0.84}/Ge{sub 0.94}Sn{sub 0.06} quantum well heterostructure optimized in terms of compositions and thicknesses is studied by solving Schrödinger equation without and under applied bias voltage. The strong absorption coefficient (>1.5?×?10{sup 4}?cm{sup ?1}) and the shift of the direct transition under large Stark effect at 3?V are useful characteristics for the design of optoelectronic devices based on compressively strained IV-IV heterostructures at near infrared wavelengths.

Yahyaoui, N., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr; Sfina, N.; Said, M., E-mail: naima.yahyaoui@yahoo.fr, E-mail: moncef-said@yahoo.fr [Laboratoire de la Matière Condensée et des Nanosciences (LMCN), Département de Physique, Faculté des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia); Lazzari, J.-L. [Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), UMR CNRS 7325, Aix-Marseille Université, Case 913, Campus de Luminy, 13288 Marseille cedex 9 (France); Bournel, A. [Institut d'Electronique Fondamentale (IEF), UMR CNRS 8622, Université Paris-Sud, Bât. 220, 91405 Orsay cedex (France)

2014-01-21T23:59:59.000Z

363

Collective flow in Ar+KCl at 1. 8 GeV/nucleon  

SciTech Connect (OSTI)

The failure of the standard sphericity tensor analysis to detect any significant collective flow effect in Ar+KCl at 1.8A GeV is examined in light of the success of the transverse momentum analysis technique suggested by Danielewicz and Odyniec in exhibiting collective flow in the same system. It is argued, using a simple estimate which takes into consideration the main features of the data, that the failure of the sphericity analysis is attributable to the dominant contribution of the longitudinal momentum of the spectators which has nothing to do with the collective effects for which sphericity analysis is designed. The exclusion of the spectators from the sphericity tensor leads to a clear signal from the collective transverse flow of the participants whenever such a flow takes place.

Jaqaman, H.R.

1986-06-01T23:59:59.000Z

364

Fitting the Fermi-LAT GeV excess: on the importance of the propagation of electrons from dark matter  

E-Print Network [OSTI]

An excess of gamma rays at GeV energies has been detected in the Fermi-LAT data. This signal comes from a narrow region around the Galactic Center and has been interpreted as possible evidence for light (30 GeV) dark matter particles. Focussing on the prompt gamma-ray emission, previous works found that the best fit to the data corresponds to annihilations proceeding into b quarks, with a dark matter profile going as r^{-1.2}. We show that this is not the only possible annihilation set-up. More specifically, we show how including the contributions to the gamma-ray spectrum from inverse Compton scattering and bremsstrahlung from electrons produced in dark matter annihilations, and undergoing diffusion through the Galactic magnetic field, significantly affects the spectrum for leptonic final states. This drastically changes the interpretation of the excess in terms of dark matter.

Lacroix, Thomas

2015-01-01T23:59:59.000Z

365

Multi-GeV neutrinos due to neutro anti-neutron oscillation in Gamma-Ray Burst Fireballs  

E-Print Network [OSTI]

The long and short gamma-ray bursts are believed to be produced due to collapse of massive stars and merger of compact binaries respectively. All these objects are rich in neutron and the jet outflow from these objects must have a neutron component in it. By postulating the neutron anti-neutron oscillation in the gamma-ray burst fireball, we show that, 19-38 GeV neutrinos and anti-neutrinos can be produced due to annihilation of anti-neutrons with the background neutrons. These neutrinos and anti-neutrinos will be produced before the 5-10 GeV neutrinos due to dynamical decoupling of neutrons from the rest of the fireball. Observation of these neutrinos will shed more light on the nature of the GRB progenitors and also be a unique signature of physics beyond the standard model. A possible way of detecting these neutrinos in future is also discussed.

Sarira Sahu

2007-02-27T23:59:59.000Z

366

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study  

SciTech Connect (OSTI)

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

2013-12-21T23:59:59.000Z

367

Mrk 421, Mrk 501, and 1ES 1426+428 at 100 GeV with the CELESTE Cherenkov Telescope  

E-Print Network [OSTI]

We have measured the gamma-ray fluxes of the blazars Mrk 421 and Mrk 501 in the energy range between 50 and 350 GeV (1.2 to 8.3 x 10^25 Hz). The detector, called CELESTE, used first 40, then 53 heliostats of the former solar facility "Themis" in the French Pyrenees to collect Cherenkov light generated in atmospheric particle cascades. The signal from Mrk 421 is often strong. We compare its flux with previously published multi-wavelength studies and infer that we are straddling the high energy peak of the spectral energy distribution. The signal from Mrk 501 in 2000 was weak (3.4 sigma). We obtain an upper limit on the flux from 1ES 1426+428 of less than half that of the Crab flux near 100 GeV. The data analysis and understanding of systematic biases have improved compared to previous work, increasing the detector's sensitivity.

D. A. Smith; E. Brion; R. Britto; P. Bruel; J. Bussons Gordo; D. Dumora; E. Durand; P. Eschstruth; P. Espigat; J. Holder; A. Jacholkowska; J. Lavalle; R. Le Gallou; B. Lott; H. Manseri; F. Munz; E. Nuss; F. Piron; R. C. Rannot; T. Reposeur; T. Sako

2006-08-11T23:59:59.000Z

368

Mrk 421, Mrk 501, and 1ES 1426+428 at 100 GeV with the CELESTE Cherenkov Telescope  

E-Print Network [OSTI]

We have measured the gamma-ray fluxes of the blazars Mrk 421 and Mrk 501 in the energy range between 50 and 350 GeV (1.2 to 8.3 x 10^25 Hz). The detector, called CELESTE, used first 40, then 53 heliostats of the former solar facility "Themis" in the French Pyrenees to collect Cherenkov light generated in atmospheric particle cascades. The signal from Mrk 421 is often strong. We compare its flux with previously published multi-wavelength studies and infer that we are straddling the high energy peak of the spectral energy distribution. The signal from Mrk 501 in 2000 was weak (3.4 sigma). We obtain an upper limit on the flux from 1ES 1426+428 of less than half that of the Crab flux near 100 GeV. The data analysis and understanding of systematic biases have improved compared to previous work, increasing the detector's sensitivity.

Smith, D A; Britto, R; Bruel, P; Gordo, J B; Dumora, D; Durand, E; Eschstruth, P; Espigat, P; Holder, J; Jacholkowska, A; Lavalle, J; Le Gallou, R; Lott, B; Manseri, H; Munz, F; Nuss, E; Piron, Frédéric; Reposeur, T; Sako, T

2006-01-01T23:59:59.000Z

369

Inelastic interaction induced by high-energy muons (6 GeV, 12 GeV) at low momentum-transfer in nuclear emulsion  

Science Journals Connector (OSTI)

Inelastic scattering of 6 and 12 GeV muons has been studied in Ilford K5 nuclear emulsions. For energy transfers greater than 150 MeV (for ?...2..., the cross-sections are respectively (11.1±1.4) ?b/nucleon at 12...

J. C. Montret; B. Coupat; B. Michel; F. Vazeille

1972-01-01T23:59:59.000Z

370

Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe  

E-Print Network [OSTI]

Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge; published 4 December 2007 Phase-change materials are of immense importance for optical recording-increasing demands on the density, speed, and stability of memory. Phase-change PC materials already play impor- tant

371

University Petition for General Education Variation The General Education (G.E.) program at Cal State Fullerton is the foundation of a university education. G.E. requirements  

E-Print Network [OSTI]

, students may petition for a variation to a standard G.E. requirement. IMPORTANT: This petition should plan for meeting the requirement being petitioned in the event the petition is denied. PREPARING it is prepared for review. If there is a historical TDA that has information on it that is no longer on your TDA

de Lijser, Peter

372

In situ observation of self-assembled Fe{sub 13}Ge{sub 8} nanowires growth on anisotropic Ge (1 1 0) surface  

SciTech Connect (OSTI)

Highlights: Black-Right-Pointing-Pointer Epitaxial Fe{sub 13}Ge{sub 8} nanowries growth and shape evolution on Ge (1 1 0) studied by in situ UHV-TEM. Black-Right-Pointing-Pointer Single type of morphology and unique orientation of nanowires formed at elevated temperatures. Black-Right-Pointing-Pointer Uniform control of the nanowires morphology at different temperatures can be succeeded. -- Abstract: Self-assembled iron germanide nanowires (NWs) were grown by directly depositing Fe onto a Ge (1 1 0) substrate, in an in situ ultra-high vacuum transmission electron microscope from 430 to 500 Degree-Sign C. All observed NWs had a similar length/width aspect ratio ({approx}8:1) at all deposition temperatures, as well as the same elongation orientation with respect to the underlying Ge (1 1 0) substrate. The growth dynamics was investigated by real time observations of NWs growth at elevated temperatures. It is elucidated that the formation of NWs in similar shape at all deposited temperatures is attributed to the similar activation energy barriers in length and width of NWs, which can result in the constant growth rate independent of growth temperatures. Furthermore, the difference in pre-exponential factor along the length and width of growing islands arose due to the anisotropic constraint of the Ge (1 1 0) substrate, leading to the unique elongation of NWs. This growth dynamics suggests the possibility of uniform control of the morphology of self-assembled NWs, as well as other morphologies of bottom-up fabricated devices, at different deposition temperatures.

Li, Zhi-Peng, E-mail: LI.Zhipeng@nims.go.jp [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore) [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore); Global Research Center for Environment and Energy based on Nanomaterials Science, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Tok, Engsoon [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore)] [Department of Physics, National University of Singapore, 2 Science Drive 3, S117542 (Singapore); Foo, Yonglim [Institute of Materials Research and Engineering, 3 Research Link, S117602 (Singapore)] [Institute of Materials Research and Engineering, 3 Research Link, S117602 (Singapore)

2012-02-15T23:59:59.000Z

373

Single-Neutron Excitations in Neutron-Rich 83Ge and 85Se  

SciTech Connect (OSTI)

The 2H(82Ge,p)83Ge and 2H(84Se,p)85Se reactions were studied with radioactive beams of 82Ge and 84Se at beam energies of Ebeam = 330 and 380 MeV, respectively. Excitation energies, proton angular distributions, and asymptotic normalization coefficients have been determined for the lowest lying states of 83Ge and 85Se. Spectroscopic factors have also been extracted under normal assumptions of the bound-state potential properties in the DWBA analysis. However, the peripheral character of the measurements leads to large uncertainties in this extraction. Shell model calculations have been performed in the region above 78Ni, comparing the single-particle properties of the even-Z, N = 51 nuclei up to 91Zr and including 83Ge and 85Se. Direct-semidirect neutron capture calculations to 83Ge and 85Se have also been performed using the spectroscopic input from these (d,p) reaction measurements.

Thomas, Jeffrey S [ORNL; Arbanas, Goran [ORNL; Bardayan, Daniel W [ORNL; Blackmon, Jeff C [ORNL; Cizewski, Jolie [ORNL; Dean, David Jarvis [ORNL; Fitzgerald, Ryan [ORNL; Greife, Uwe [ORNL; Gross, Carl J [ORNL; Johnson, Micah [ORNL; Grzywacz-Jones, Kate L [ORNL; KOZUB, RAYMOND L [ORNL; Liang, J Felix [ORNL; Livesay, Jake [ORNL; Ma, Zhanwen [ORNL; Moazen, Brian H [ORNL; Nesaraja, Caroline D [ORNL; Shapira, Dan [ORNL; Smith, Michael Scott [ORNL; Visser, Dale William [ORNL

2007-01-01T23:59:59.000Z

374

Structure and magnetism in strained Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy  

SciTech Connect (OSTI)

In this letter, we study the structural and magnetic properties of Ge{sub 1-x-y}Sn{sub x}Mn{sub y} films grown on Ge(001) by low temperature molecular beam epitaxy using X-ray diffraction, high resolution transmission electron microscopy, and superconducting quantum interference device. Like in Mn doped Ge films, Mn atoms diffuse during the growth and aggregate into vertically aligned Mn-rich nanocolumns of a few nanometers in diameter. Transmission electron microscopy observations in plane view clearly indicate that the Sn incorporation is not uniform with concentration in Mn rich vertical nanocolumns lower than the detection limit of electron energy loss spectroscopy. The matrix exhibits a GeSn solid solution while there is a Sn-rich GeSn shell around GeMn nanocolumns. The magnetization in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} layers is higher than in Ge{sub 1-x}Mn{sub x} films. This magnetic moment enhancement in Ge{sub 1-x-y}Sn{sub x}Mn{sub y} is probably related to the modification of the electronic structure of Mn atoms in the nanocolumns by the Sn-rich shell, which is formed around the nanocolumns.

Prestat, E. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Karlsruher Institut fuer Technologie (KIT), Laboratorium fuer Elektronenmikroskopie, D-76128 Karlsruhe (Germany); Barski, A.; Bellet-Amalric, E.; Morel, R.; Tainoff, D.; Jain, A.; Porret, C.; Bayle-Guillemaud, P.; Jamet, M. [INAC, SP2M, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France); Jacquot, J.-F. [INAC, SCIB, CEA and Universite Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

2013-07-01T23:59:59.000Z

375

Molecular dynamics simulations of damage production by thermal spikes in Ge  

SciTech Connect (OSTI)

Molecular dynamics simulation techniques are used to analyze damage production in Ge by the thermal spike process and to compare the results to those obtained for Si. As simulation results are sensitive to the choice of the inter-atomic potential, several potentials are compared in terms of material properties relevant for damage generation, and the most suitable potentials for this kind of analysis are identified. A simplified simulation scheme is used to characterize, in a controlled way, the damage generation through the local melting of regions in which energy is deposited. Our results show the outstanding role of thermal spikes in Ge, since the lower melting temperature and thermal conductivity of Ge make this process much more efficient in terms of damage generation than in Si. The study is extended to the modeling of full implant cascades, in which both collision events and thermal spikes coexist. Our simulations reveal the existence of bigger damaged or amorphous regions in Ge than in Si, which may be formed by the melting and successive quenching induced by thermal spikes. In the particular case of heavy ion implantation, defect structures in Ge are not only bigger, but they also present a larger net content in vacancies than in Si, which may act as precursors for the growth of voids and the subsequent formation of honeycomb-like structures.

Lopez, Pedro; Pelaz, Lourdes; Santos, Ivan; Marques, Luis A.; Aboy, Maria [Departamento de Electricidad y Electronica, Universidad de Valladolid, E.T.S.I. Telecomunicacion, Valladolid 47011 (Spain)

2012-02-01T23:59:59.000Z

376

A comparison of the Higgs sectors of the CMSSM and NMSSM for a 126 GeV Higgs boson  

Science Journals Connector (OSTI)

Abstract The recent discovery of a Higgs-like boson at the LHC with a mass of 126 GeV has revived the interest in supersymmetric models, which predicted a Higgs boson mass below 130 GeV long before its discovery. We compare systematically the allowed parameter space in the constrained Minimal Supersymmetric Standard Model (CMSSM) and the Next-to-Minimal Supersymmetric Model (NMSSM) by minimizing the ? 2 function with respect to all known constraints from accelerators and cosmology using GUT scale parameters. For the CMSSM the Higgs boson mass at tree level is below the Z 0 boson mass and large radiative corrections are needed to obtain a Higgs boson mass of 126 GeV, which requires stop squark masses in the multi-TeV range. In contrast, for the NMSSM light stop quarks are allowed, since in the NMSSM at tree level the Higgs boson mass can be above the Z 0 boson mass from mixing with the additional singlet Higgs boson. Predictions for the scalar boson masses are given in both models with emphasis on the unique signatures of the NMSSM, where the heaviest scalar Higgs boson decays in the two lighter scalar Higgs bosons with a significant branching ratio, in which case one should observe double Higgs boson production at the LHC. Such a signal is strongly suppressed in the CMSSM. In addition, since the LSP is higgsino-like, Higgs boson decays into \\{LSPs\\} can be appreciable, thus leading to invisible Higgs decays.

C. Beskidt; W. de Boer; D.I. Kazakov

2013-01-01T23:59:59.000Z

377

Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering  

SciTech Connect (OSTI)

The XRMS experiment on the Gd{sub 5}Ge{sub 4} system has shown that, below the Neel temperature, T{sub N} = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd{sub 5}Ge{sub 4}. A spin-reorientation transition is a possibility in Gd{sub 5}Ge{sub 4}, which is similar to the Tb{sub 5}Ge{sub 4} case. Tb{sub 5}Ge{sub 4} possesses the same Sm{sub 5}Ge{sub 4}-type crystallographic structure and the same magnetic space group as Gd{sub 5}Ge{sub 4} does. The difference in magnetic structure is that Tb{sub 5}Ge{sub 4} has a canted one but Gd{sub 5}Ge{sub 4} has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb{sub 5}Ge{sub 4}. The spin-reorientation transition in both Gd{sub 5}Ge{sub 4} and Tb{sub 5}Ge{sub 4} may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.

Lizhi Tan

2008-08-18T23:59:59.000Z

378

Scanning tunneling microscopy study of the Eu-induced Ge(111)-(3×2)?(3×4) reconstruction  

Science Journals Connector (OSTI)

Eu-induced (3×2) reconstruction of the Ge(111) surface has been investigated by scanning tunneling microscopy (STM). The empty-state STM images show the chainlike atomic structure that is similar to those of the metal-induced Si(111)-(3×2) surfaces with an adsorbate coverage of 1?6 monolayer (ML). The filled-state STM images combined with the empty-state images at the low bias voltage reveal that the Ge arrangement of Eu?Ge(111)-(3×2) can be well interpreted in terms of the honeycomb chain-channel (HCC) model with the characteristic Ge?Ge double bond and slightly modified Ge honeycomb chains which are similar to those of the 1?6-ML HCC structure of Si(111)-(3×2). In addition, the Eu?Ge(111)-(3×2) surface is found to have a local ×4 periodicity along Eu chains, which can be explained, based on the analysis of STM line profiles, with two nonequivalent adsorption sites occupied by the Eu atoms in the empty channels of the HCC structure. The structural modifications of the Ge honeycomb chains as well as the origin of the ×2 and ×4 chains of Eu atoms in the HCC structure on the Eu?Ge(111) surface are discussed.

M. Kuzmin; P. Laukkanen; R. E. Perälä; I. J. Väyrynen

2006-03-23T23:59:59.000Z

379

Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy  

SciTech Connect (OSTI)

Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

Luong, T. K. P.; Dau, M. T.; Zrir, M. A.; Le Thanh, V.; Petit, M. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France)] [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Stoffel, M.; Rinnert, H. [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)] [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Ghrib, A.; El Kurdi, M.; Boucaud, P. [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France)] [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France); Murota, J. [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)] [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

2013-08-28T23:59:59.000Z

380

Time stretching of the GeV emission of GRBs: Fermi-LAT data vs geometrical model  

E-Print Network [OSTI]

It is known that the high energy $(> 100\\,\\text{MeV})$ emission of gamma-ray bursts is delayed with respect to the low energy emission. However, the dependence of light curves on energy has not been studied for the high energy bands. In this paper we consider the bursts observed by Fermi LAT from 2008 August 4 to 2011 August 1, for which at least $10$ photons were observed with the energy greater than $1\\,\\text{GeV}$. These include $4$ bursts: GRB 080916C, GRB 090510, GRB 090902B, and GRB 090926A. We use the Kolmogorov-Smirnov test to compare the light curves in the two bands, $100\\,\\text{MeV} 1\\,\\text{GeV}$. For GRB 080916C and GRB 090510 the light curves in the two bands are statistically compatible. However, for GRB 090926A, the higher-energy light curve is stretched compared to the lower-energy one with a statistical significance of $3.3 \\sigma$ and, for GRB 090902B, on the contrary, the lower-energy curve is stretched with $2.3 \\sigma$ significance. We argue that the observed diversity of stretching fac...

Piskunov, Maxim S

2014-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

The Linac Injector For The ANL 7 Ge V Advanced Photon Source  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Injector For The ANL 7 Ge V Injector For The ANL 7 Ge V Advanced Photon Source A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory Submitted to the 1990 LINAC Conferece Albuquerque, New Mexico LS-154 9/28/90 TEE LINAC INJECTOR FOR TEE ANL 7 G<.iJ,V ADVANCED PHOTON SOORCE* A. Nassiri, W. Wesolowski, and G. Mavrogenes Argonne National Laboratory 9700 South Cass Avenue Argonne, IL 60439 USA Abstract The Argonne Advanced Photon Source (APS) linac system consists of a 200 MeV electron linac, a positron converter, and a 450 MeV positron linac. Design parameters and computer simulations of the two linac systems are presented. Introduction The Argonne Advanced Photon Source is a 7 GeV synchrotron X-Ray facility. The APS machine parameters have been described.

382

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC GLOBAL RESEARCH, INC (GE) FOR AN  

Broader source: Energy.gov (indexed) [DOE]

RESEARCH, INC (GE) FOR AN RESEARCH, INC (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE AWARD NO. DE-EE0005344; W(A) 2011-072 GE has requested a waiver of domestic and foreign patent rights of the United States of America in all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Module Embedded Microinverter Smart Grid Ready Residential Solar Electric System." The cooperative agreement was made under the Solar Energy Grid Integration Systems - Advanced Concepts (SEGIS-AC) Funding Opportunity Announcement (DE-FOA-0000479). The objectives of SEGIS-AC are to support the development and demonstration of technologies in power electronics that reduce the overall PV system costs, allow high penetrations of solar

383

STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT  

Broader source: Energy.gov (indexed) [DOE]

0 0 STATEMENT OF CONSIDERATIONS REQUEST BY THE GE CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE- FC07-011D14093; W(A)-01-031; CH-1078 The Petitioner, GE, has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Microanalysis Techniques for Accelerated Characterization of Polymer Properties." This waiver will not impact the rights of those parties subject to Public Law 96-517, as amended, nor shall it grant any rights in inventions made by employees of the National Laboratories. The objective of the cooperative agreement is to develop techniques and

384

Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc  

Broader source: Energy.gov (indexed) [DOE]

5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders

385

Suzanne G.E. te Velthuis - Argonne National Laboratories, Materials Sicence  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NXRS > Suzanne G.E. te Velthuis NXRS > Suzanne G.E. te Velthuis Suzanne G.E. te Velthuis Physicist Bldg. 223, B-205 Phone 630-252-1075 This e-mail address is being protected from spambots. You need JavaScript enabled to view it. Quick Links Selected Publications Selected Invited Talks Present Position Physicist, Materials Science Division, Argonne National Laboratory (2005-Present). Education Ph.D. Degree, Deft University of Technology, The Netherlands (1999). Masters Degree in Applied Physics, Eindhoven University of Technology, The Netherlands (1993). Professional Expirence Assistant Scientist, Materials Science Division, Argonne National Laboratory, (2001-2005). Post-doctoral Scientist, Intense Pulsed Neutron Source, Argonne National Laboratory (1999-2001). Researcher in training (leading to PhD degree), Delft University of Technology, The Netherlands (1994 -1998).

386

Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

5 5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C. Environmental Aspects / Potential Sources of Impact Chemical Use/Storage - Mica flake, ceramic fibers, glass fibers, and ceramic binders will be used. Chemical Waste Disposal - Approximately 1 lb of mica flake, 1 lb of ceramic fibers, 1 lb of glass fibers, and 20 lbs of ceramic binders

387

5-10 GeV Neutrinos from Gamma-Ray Burst Fireballs  

E-Print Network [OSTI]

A gamma-ray burst fireball is likely to contain an admixture of neutrons, in addition to protons, in essentially all progenitor scenarios. Inelastic collisions between differentially streaming protons and neutrons in the fireball produce muon neutrinos (antineutrinos) of ~ 10 GeV as well as electron neutrinos (antineutrinos) of ~ 5 GeV, which could produce ~ 7 events/year in kilometer cube detectors, if the neutron abundance is comparable to that of protons. Photons of ~ 10 GeV from pi-zero decay and ~ 100 MeV electron antineutrinos from neutron decay are also produced, but will be difficult to detect. Photons with energies < 1 MeV from shocks following neutron decay produce a characteristic signal which may be distinguishable from the proton-related MeV photons.

John N. Bahcall; Peter Meszaros

2000-06-23T23:59:59.000Z

388

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Y. Maeda; N. Kawasaki; T. Masuda; H. Morii; D. Naito; Y. Nakajima; H. Nanjo; T. Nomura; N. Sasao; S. Seki; K. Shiomi; T. Sumida; Y. Tajima

2014-12-22T23:59:59.000Z

389

An aerogel Cherenkov detector for multi-GeV photon detection with low sensitivity to neutrons  

E-Print Network [OSTI]

We describe a novel photon detector which operates under an intense flux of neutrons. It is composed of lead-aerogel sandwich counter modules. Its salient features are high photon detection efficiency and blindness to neutrons. As a result of Monte Carlo (MC) simulations, the efficiency for photons with the energy larger than 1 GeV is expected to be higher than 99.5% and that for 2 GeV/$c$ neutrons less than 1%. The performance on the photon detection under such a large flux of neutrons was measured for a part of the detector. It was confirmed that the efficiency to photons with the energy $>$1 GeV was consistent with the MC expectation within 8.2% uncertainty.

Maeda, Y; Masuda, T; Morii, H; Naito, D; Nakajima, Y; Nanjo, H; Nomura, T; Sasao, N; Seki, S; Shiomi, K; Sumida, T; Tajima, Y

2014-01-01T23:59:59.000Z

390

Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters  

SciTech Connect (OSTI)

Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

Yuan, H. K.; Chen, H., E-mail: chenh@swu.edu.cn; Kuang, A. L.; Tian, C. L.; Wang, J. Z. [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)] [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China)

2013-11-28T23:59:59.000Z

391

Hybrid model of GeV-TeV gamma ray emission from Galactic Center  

E-Print Network [OSTI]

The observations of high energy $\\gamma$-ray emission from the Galactic center (GC) by HESS, and recently by Fermi, suggest the cosmic ray acceleration in the GC and possibly around the supermassive black hole. In this work we propose a lepton-hadron hybrid model to explain simultaneously the GeV-TeV $\\gamma$-ray emission. Both electrons and hadronic cosmic rays were accelerated during the past activity of the GC. Then these particles would diffuse outwards and interact with the interstellar gas and background radiation field. The collisions between hadronic cosmic rays with gas is responsible to the TeV $\\gamma$-ray emission detected by HESS. With fast cooling in the strong radiation field, the electrons would cool down and radiate GeV photons through inverse Compton scattering off the soft background photons. This scenario provides a natural explanation of the observed GeV-TeV spectral shape of $\\gamma$-rays.

Yi-Qing Guo; Qiang Yuan; Cheng Liu; Ai-Feng Li

2014-09-14T23:59:59.000Z

392

Structural relaxation and order in ion-implanted Si and Ge  

Science Journals Connector (OSTI)

Raman scattering measurements are reported as a function of annealing temperature on heavily damaged, ion-implanted Ge and Si. Changes in the opticlike, TO Raman bandwidth of amorphous Ge are found to correlate with the estimated heat of structural relaxation obtained from the data of Donovan et al. This result is consistent with a bond-strain model, demonstrating that structural relaxation is primarily associated with short-range bond-angle ordering. The results also allow an estimate of the temperature dependence of the width of the bond-angle distribution to be obtained with annealing. The Raman spectra of ion-implanted Si indicate greater order in the amorphous state than similarly prepared amorphous Ge. Estimates of the corresponding heat of structural relaxation of amorphous Si suggest that this should be observable.

J. Fortner and J. S. Lannin

1988-06-15T23:59:59.000Z

393

Effects of orbital occupancies on the neutrinoless beta-beta matrix element of 76Ge  

E-Print Network [OSTI]

In this work we use the recently measured neutron occupancies in the 76Ge and 76Se nuclei as a guideline to define the neutron quasiparticle states in the 1p0f0g shell. We define the proton quasiparticles by inspecting the odd-mass nuclei adjacent to 76Ge and 76Se. We insert the resulting quasiparticles in a proton-neutron quasiparticle random-phase approximation (pnQRPA) calculation of the nuclear matrix element of the neutrinoless double beta (0-nu-beta-beta) decay of 76Ge. A realistic model space and effective microscopic two-nucleon interactions are used. We include the nucleon-nucleon short-range correlations and other relevant corrections at the nucleon level. It is found that the resulting 0-nu-beta-beta matrix element is smaller than in the previous pnQRPA calculations, and closer to the recently reported shell-model results.

J. Suhonen; O. Civitarese

2008-03-10T23:59:59.000Z

394

MaGe - a Geant4-based Monte Carlo framework for low-background experiments  

E-Print Network [OSTI]

A Monte Carlo framework, MaGe, has been developed based on the Geant4 simulation toolkit. Its purpose is to simulate physics processes in low-energy and low-background radiation detectors, specifically for the Majorana and Gerda $^{76}$Ge neutrinoless double-beta decay experiments. This jointly-developed tool is also used to verify the simulation of physics processes relevant to other low-background experiments in Geant4. The MaGe framework contains simulations of prototype experiments and test stands, and is easily extended to incorporate new geometries and configurations while still using the same verified physics processes, tunings, and code framework. This reduces duplication of efforts and improves the robustness of and confidence in the simulation output.

Yuen-Dat Chan; Jason A. Detwiler; Reyco Henning; Victor M. Gehman; Rob A. Johnson; David V. Jordan; Kareem Kazkaz; Markus Knapp; Kevin Kroninger; Daniel Lenz; Jing Liu; Xiang Liu; Michael G. Marino; Akbar Mokhtarani; Luciano Pandola; Alexis G. Schubert; Claudia Tomei

2008-02-06T23:59:59.000Z

395

Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance  

SciTech Connect (OSTI)

Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (?200?nm) devices with photocurrents at 0.5?V of 10{sup ?4} A cm{sup ?2} while the thickest devices have photocurrents at 0.5?V of 10{sup ?2} A cm{sup ?2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5?V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

Church, Carena P.; Carter, Sue A., E-mail: sacarter@ucsc.edu [Department of Physics, University of California Santa Cruz, Santa Cruz, California 95064 (United States); Muthuswamy, Elayaraja; Kauzlarich, Susan M. [Department of Chemistry, University of California Davis, Davis, California 95616 (United States)] [Department of Chemistry, University of California Davis, Davis, California 95616 (United States); Zhai, Guangmei [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)] [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)

2013-11-25T23:59:59.000Z

396

Phase Development in a U-7 wt.% Mo vs. Al-7 wt.% Ge Diffusion Couple  

SciTech Connect (OSTI)

Fuel development for the Reduced Enrichment for Research and Test Reactors (RERTR) program has demonstrated that U-Mo alloys in contact with Al develop interaction regions with phases that have poor irradiation behavior. The addition of Si to the Al has been considered with positive results. Compositional modification to replace Si with Ge is now under evaluation to attempt to further improve irradiation behavior. In this study, the microstructural and phase development of a diffusion couple of U-7 wt.% Mo in contact with Al-7 wt.% Ge was examined by transmission electron microscopy, scanning electron microscopy and energy dispersive spectroscopy. The interdiffusion zone developed a microstructure that included the cubic-UGe3 phase and amorphous phases. The UGe3 phase was observed with and without Mo and Al solid solutioning developing a (U,Mo)(Al,Ge)3 phase.

E. Perez; D.D. Keiser, Jr.; Y.H. Sohn

2013-10-01T23:59:59.000Z

397

Lattice constants and optical response of pseudomorph Si-rich SiGe:B  

SciTech Connect (OSTI)

Pseudomorph epitaxial films of Si{sub 1?x}Ge{sub x}:B were grown on undoped (100) Si for x???0.026 and the B concentration of 1.3?×?10{sup 20}?cm{sup ?3}.The in-plane and out-of-plane lattice constants were determined using the X-ray techniques for 004 symmetric and 224 asymmetric diffraction. The influence of B and Ge co-doping has been detected in reflectance and ellipsometric spectra from infrared to ultraviolet. Free-hole plasma and Fano-type resonances of Si phonons and localized {sup 11}B and {sup 10}B vibrations have been observed. The spectral shift of E{sub 1} electronic transitions has been quantified. We found a simple way to test the variations of Ge content using relative reflectance spectra.

Caha, O. [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic)] [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Kostelník, P.; Šik, J. [ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic)] [ON Semiconductor CR, 1. Máje 2230, Rožnov p. Radhošt'em 75661 (Czech Republic); Kim, Y. D. [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)] [Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Humlí?ek, J., E-mail: humlicek@physics.muni.cz [CEITEC–Central European Institute of Technology, Masaryk University, Kamenice 753/5, 62500 Brno (Czech Republic); Nano-Optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

2013-11-11T23:59:59.000Z

398

Pion correlations in 1.8A GeV Ar on KCl and La and 1.2A GeV Xe on La  

Science Journals Connector (OSTI)

Results are presented for pion interferometry measurements of 1.8A GeV Ar+KCl and Ar+La, and 1.2A GeV Xe + La at the Lawrence Berkeley Laboratory Heavy Ion Spectrometer System. The parameters R, ?, ?, R?, and R? are presented for all three projectile-target combinations. The correlation between the extracted size of the pion source and the centrality of the collision is investigated as well as the freeze-out densities and the dependence of the source size on the mean momentum of the pion pairs. The experimental setup and analysis are discussed and comparisons made with the results of others. The phase space covered is at forward angles in the center-of-mass system.

W. B. Christie; W. F. J. Mueller; D. L. Olson; T. J. M. Symons; H. H. Wieman; D. Beavis; F. P. Brady; J. L. Romero; C. E. Tull; T. Abbott; S. Y. Fung; D. Keane; Y. Liu

1992-06-01T23:59:59.000Z

399

Polarization of Lambda0 and antiLambda0 inclusively produced by 610GeV/c Sigma- and 525GeV/c proton beams  

E-Print Network [OSTI]

We have measured the polarization of Lambda0 and antiLambda0 inclusively produced by 610GeV/c Sigma- and 525GeV/c proton beams in the experiment SELEX during the 1996/7 fixed target run at Fermilab. The polarization was measured as a function of the Lambda longitudinal momentum fraction xF and transverse momentum pt. For the Lambda0 produced by Sigma- the polarization is increasing with xF, from slightly negative at x_F~0 to about 15% at large xF; it shows a non-monotonic behavior as a function of pt. For the proton beam, the Lambda0 polarization is negative and decreasing as a function of xF and pt. The antiLambda0 polarization is compatible with 0 for both beam particles over the full kinematic range. The target dependence was examined but no statistically significant difference was found.

SELEX Collaboration; J. L. Sanchez-Lopez; K. D. Nelson; J. Engelfried

2007-06-25T23:59:59.000Z

400

Measurement of high-p/sub T/ correlations in 340-GeV/c pp and 280-GeV/c. pi. /sup -/p reactions  

SciTech Connect (OSTI)

We have measured correlations between single high-p/sub T/ (1.5 < p/sub T/ < 3.5 GeV/c) trigger particles on one side of the beam line and groups of particles entering a calorimeter on the opposite side of the beam line. The mean transverse momentum measured in the calorimeter is found to increase with the trigger-particle transverse momentum. The coplanarity of the events increases with trigger-particle transferse momentum. We have compared our data to the predictions of a phenomenological four-jet model. To fit our data we find that we must give large (0.9 GeV/c) mean transverse momenta to the constituents of the initial hadrons.

Oliver, W.P.; Limon, P.; Mantsch, P.

1983-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Measurement of charged pions in 12C + 12C collisions at 1A GeV and 2A GeV with HADES  

E-Print Network [OSTI]

We present the results of a study of charged pion production in 12C + 12C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of pi+- mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular range measurement of the distribution of pi+- mesons for the 12C + 12C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed.

Agakichiev, G

2009-01-01T23:59:59.000Z

402

Measurement of charged pions in 12C + 12C collisions at 1A GeV and 2A GeV with HADES  

E-Print Network [OSTI]

We present the results of a study of charged pion production in 12C + 12C collisions at incident beam energies of 1A GeV and 2A GeV using the HADES spectrometer at GSI. The main emphasis of the HADES program is on the dielectron signal from the early phase of the collision. Here, however, we discuss the data with respect to the emission of charged hadrons, specifically the production of pi+- mesons, which are related to neutral pions representing a dominant contribution to the dielectron yield. We have performed the first large-angular range measurement of the distribution of pi+- mesons for the 12C + 12C collision system covering a fairly large rapidity interval. The pion yields, transverse-mass and angular distributions are compared with calculations done within a transport model, as well as with existing data from other experiments. The anisotropy of pion production is systematically analyzed.

The HADES Collaboration; G. Agakishiev; C. Agodi; A. Balanda; G. Bellia; D. Belver; A. Belyaev; J. Bielcik; A. Blanco; A. Bortolotti; J. L. Boyard; P. Braun-Munzinger; P. Cabanelas; S. Chernenko; T. Christ; R. Coniglione; M. Destefanis; J. Diaz; F. Dohrmann; I. Duran; A. Dybczak; T. Eberl; L. Fabbietti; O. Fateev; R. Ferreira-Marques; P. Finocchiaro; P. Fonte; J. Friese; I. Froehlich; T. Galatyuk; J. A. Garzon; R. Gernhaeuser; A. Gil; C. Gilardi; M. Golubeva; D. Gonzalez-Diaz; E. Grosse; F. Guber; M. Heilmann; T. Heinz; T. Hennino; R. Holzmann; A. Ierusalimov; I. Iori; A. Ivashkin; M. Jurkovic; B. Kaempfer; K. Kanaki; T. Karavicheva; D. Kirschner; I. Koenig; W. Koenig; B. W. Kolb; R. Kotte; A. Kozuch; A. Krasa; F. Krizek; R. Kruecken; W. Kuehn; A. Kugler; A. Kurepin; J. Lamas-Valverde; S. Lang; J. S. Lange; K. Lapidus; L. Lopes; M. Lorenz; L. Maier; C. Maiolino; A. Mangiarotti; J. Marin; J. Markert; V. Metag; B. Michalska; J. Michel; E. Moriniere; J. Mousa; M. Muench; C. Muentz; L. Naumann; R. Novotny; J. Otwinowski; Y. C. Pachmayer; M. Palka; Y. Parpottas; V. Pechenov; O. Pechenova; T. Perez Cavalcanti; P. Piattelli; J. Pietraszko; V. Pospisil; W. Przygoda; B. Ramstein; A. Reshetin; M. Roy-Stephan; A. Rustamov; A. Sadovsky; B. Sailer; P. Salabura; P. Sapienza; A. Schmah; C. Schroeder; E. Schwab; R. S. Simon; Yu. G. Sobolev; S. Spataro; B. Spruck; H. Stroebele; J. Stroth; C. Sturm; M. Sudol; A. Tarantola; K. Teilab; P. Tlusty; M. Traxler; R. Trebacz; H. Tsertos; V. Wagner; M. Weber; M. Wisniowski; T. Wojcik; J. Wuestenfeld; S. Yurevich; Y. Zanevsky; P. Zhou; P. Zumbruch

2009-05-18T23:59:59.000Z

403

Changing the PEP-II Center-of-Mass Energy Down to 10 GeV and up to 11 GeV  

SciTech Connect (OSTI)

PEP-II, the SLAC, LBNL, LLNL B-Factory was designed and optimized to run at the Upsilon 4S resonance (10.580 GeV with an 8.973 GeV e- beam and a 3.119 GeV e+ beam). The interaction region (IR) used permanent magnet dipoles to bring the beams into a head-on collision. The first focusing element for both beams was also a permanent magnet. The IR geometry, masking, beam orbits and beam pipe apertures were designed for 4S running. Even though PEP-II was optimized for the 4S, we successfully changed the center-of-mass energy (E{sub cm}) down to the Upsilon 2S resonance and completed an E{sub cm} scan from the 4S resonance up to 11.2 GeV. The luminosity throughout most of these changes remained near 1 x 10{sup 34} cm{sup -2}s{sup -1}. The E{sub cm} was changed by moving the energy of the high-energy beam (HEB). The beam energy differed by more than 20% which produced significantly different running conditions for the RF system. The energy loss per turn changed 2.5 times over this range. We describe how the beam energy was changed and discuss some of the consequences for the beam orbit in the interaction region. We also describe some of the RF issues that arose and how we solved them as the high-current HEB energy changed.

Sullivan, M; Bertsche, K.; Novokhatski, A.; Seeman, J.; Wienands, U.; /SLAC

2009-05-20T23:59:59.000Z

404

Conceptual Design of A 1-2 GeV Synchroton Radiation Source  

SciTech Connect (OSTI)

A description is presented of the conceptual design of the Lawrence Berkeley Laboratory 1-2 GeV Synchrotron Radiation Source, which is designed to produce ultraviolet and soft x-ray radiation. The facility consists of an injection system (linac plus booster synchrotron), a low emittance storage ring optimized at 1.5 GeV, several insertion devices (wigglers and undulators) located in the storage ring straight sections, and beam lines from the insertion devices and bending magnets. Storage ring performance is analyzed in terms of lattice, collective instabilities and beam lifetime. The injection system and its performance are discussed. Spectral characteristics of the radiation are presented.

The 1-2 GeV Synchrotron Radiation Source Design St

1986-08-01T23:59:59.000Z

405

First Observation of Dielectron Production in Proton-Nucleus Collisions below 10 GeV  

Science Journals Connector (OSTI)

We have begun a program to measure dielectron production in p-nucleus and nucleus-nucleus collisions at the LBL Bevalac. Results are presented for the reaction p+Be at 4.9 GeV. For the first time, direct dilepton production is observed below 10 GeV incident energy. The cross sections are discussed and compared to previous data at higher energies. The observation of a structure at a mass of about 275 MeV suggests that pion annihilation may be the dominant production mechanism in this mass range.

G. Roche; G. Claesson; D. Hendrie; G. F. Krebs; E. Lallier; A. Letessier-Selvon; H. S. Matis; T. Mulera; C. Naudet; L. Schroeder; P. A. Seidl; A. Yegneswaran; Z. F. Wang; J. Bystricky; J. Carroll; J. Gordon; G. Igo; S. Trentalange; T. Hallman; L. Madansky; J. F. Gilot; P. Kirk; D. Miller; G. Landaud ((DLS Collaboration))

1988-08-29T23:59:59.000Z

406

Blue Emission Peak of GeO{sub 2} Particles Grown Using Thermal Evaporation  

SciTech Connect (OSTI)

In this paper we report a simple thermal evaporation technique (horizontal tube furnace) to grow large quantities of GeO{sub 2} particles with diameters ranging from tens of nanometer to 500 nm on n-type (100) Si substrate free of catalyst. The particles were grown at temperature about 1000 degree sign C for 2 hrs and characterized by scanning electron microscopy (SEM), X-Ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and photoluminescence (PL) spectroscopy. The photoluminescence spectrum reveals several emission peaks around 400 nm at room temperature. Raman measurement also measured at room temperature for this GeO{sub 2} particles.

Sulieman, Kamal Mahir [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Physics Department, Alzaiem Alazhary University, 1432-Khartoum (Sudan); Jumidali, M. M. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia); Faculty of Applied Science, Universiti Teknologi MARA, 13500 Penang (Malaysia); Hashim, M. R. [School of Physics, Universiti Sains Malaysia (USM), 11800 Minden, Penang (Malaysia)

2010-07-07T23:59:59.000Z

407

Search for neutrinoless double-beta decay of Ge-76 with GERDA  

E-Print Network [OSTI]

GERDA, the GERmanium Detector Array experiment, is a new double beta-decay experiment which is currently under construction in the INFN National Gran Sasso Laboratory (LNGS), Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of GERDA is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments. The paper discusses motivation, physics reach, design and status of construction of GERDA, and presents some R&D results.

Karl-Tasso Knoepfle

2008-09-30T23:59:59.000Z

408

Indium (In)- and tin (Sn)-based metal induced crystallization (MIC) on amorphous germanium (?-Ge)  

Science Journals Connector (OSTI)

Abstract In this paper, metal-induced crystallization (MIC) phenomenon on ?-Ge by indium (In) and tin (Sn) are thoroughly investigated. In- and Sn-MIC process respectively started at 250 °C and 400 °C. Compared to the previously reported MIC samples including In-MIC, Sn-MIC process presented higher sheet resistance (similar to that of SPC) and bigger crystal grains above 50 nm (slightly smaller than that of SPC). According to SIMS analysis, Sn atoms diffused more slowly into Ge than In at 400 °C, providing lower density of heterogeneous nuclei induced by metals and consequently larger crystal grains.

Dong-Ho Kang; Jin-Hong Park

2014-01-01T23:59:59.000Z

409

Effect of Si interlayers on the magnetic and mechanical properties of Fe/Ge neutron polarizing multilayer mirrors  

SciTech Connect (OSTI)

The neutron polarizing supermirror is one of the most important optical devices for polarizing neutron beams. To meet a variety of research demands, neutron polarizing supermirrors need to display high polarization efficiencies at low external magnetic fields. Fe/Si and Fe/Ge multilayers are typically used in neutron polarizing supermirrors because the contrast in scattering length densities almost vanishes for spin-down neutrons. The Fe/Si/Ge/Si multilayer, obtained by adding thin interlayers of Si to an Fe/Ge multilayer, is effective in reducing the external field strength necessary to achieve efficient neutron polarization. To gain insight into the mechanism that controls the required external field strength for a neutron polarizing supermirror, we investigated the magnetic and mechanical properties of Fe/Si, Fe/Ge, and Fe/Si/Ge/Si multilayers. The external field strength required to achieve efficient neutron polarization was found to be proportional to the compressive film stress. The compressive stress of the Fe/Si/Ge/Si multilayer was smaller by a factor of 4.4 and 2.7 than that of Fe/Si and Fe/Ge multilayers, respectively. These measurements and analyses showed that a reduction in the compressive film stress in the Fe/Si/Ge/Si multilayer permits the use of lower external field strength to achieve efficient neutron polarization. X-ray photoelectron spectroscopic studies showed that the formation of a Ge-Si solid solution in the Ge layer may explain the marked reduction in compressive stress in the case of the Fe/Si/Ge/Si multilayer. This study confirmed that a reduction in compressive film stress is very important for a high-performance neutron polarizing supermirror.

Maruyama, R.; Yamazaki, D.; Hayashida, H.; Soyama, K. [J-PARC Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Okayasu, S. [Advanced Science Research Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Takeda, M. [J-PARC Center, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Quantum Beam Science Directorate, Japan Atomic Energy Agency, Tokai, Ibaraki 319-1195 (Japan); Zettsu, N.; Nagano, M.; Yamamura, K. [Research Center for Ultra-precision Science and Technology, Graduate School of Engineering, Osaka University, Yamadaoka 2-1, Suita, Osaka 565-0871 (Japan)

2012-03-15T23:59:59.000Z

410

Low-temperature (180?°C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization  

SciTech Connect (OSTI)

The Al-induced crystallization (AIC) yields a large-grained (111)-oriented Ge thin film on an insulator at temperatures as low as 180?°C. We accelerated the AIC of an amorphous Ge layer (50-nm thickness) by initially doping Ge in Al and by facilitating Ge diffusion into Al. The electron backscatter diffraction measurement demonstrated the simultaneous achievement of large grains over 10??m and a high (111) orientation fraction of 90% in the polycrystalline Ge layer formed at 180?°C. This result opens up the possibility for developing Ge-based electronic and optical devices fabricated on inexpensive flexible substrates.

Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Numata, R.; Oya, N.; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Fukata, N. [National Institute for Materials Science, Namiki, Tsukuba 305-0044 (Japan); Usami, N. [Materials, Physics and Energy Engineering, Nagoya University, Aichi 464-8603 (Japan)

2014-01-13T23:59:59.000Z

411

Driving Sensing Technology in Oil & Gas | GE Global Research  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Author Loucas Tsakalakos Lab Manager Photonics Loucas leads a team developing advanced, micronano structure enabled sub-systems, components and devices that use light for data...

412

The interfacial reaction of Ni on (100) Si?â??xGex (x=0, 0.25) and (111) Ge  

E-Print Network [OSTI]

The interfacial reaction of Ni with Si, Si?.??Ge?.??, and Ge at 400°C has been investigated. A uniform epitaxial NiSi film was obtained at 400°C for Ni-Silicidation on Si using rapid thermal annealing method. Similarly, ...

Jin, Lijuan

413

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions  

E-Print Network [OSTI]

Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions-Si and SiGe-on-insulator were fabricated, combining both the benefits of high-mobility strained-Si and SOI) to oxidized handle wafers. Layer transfer onto insulating handle wafers can be accomplished using grind

414

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes-Based Electrical  

E-Print Network [OSTI]

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 24, NO. 12, JUNE 15, 2012 1069 Si/Ge Avalanche Photodiodes/Ge-based avalanche photodiode (APD) for the direct genera- tion of ultra-wideband (UWB) frequency comb lines--Avalanche photodiodes (APD), impulse radio (IR), ultra-wideband (UWB). I. INTRODUCTION THERE has been a great scarcity

Bowers, John

415

Planar waveguide obtained by burying a Ge22As20Se58 fiber in As2S3 glass  

E-Print Network [OSTI]

Planar waveguide obtained by burying a Ge22As20Se58 fiber in As2S3 glass Quentin Coulombier glasses. Two highly mature chalcogenide glasses are used for these experiments. GASIR glass from Umicore IR Glass, Olen, Belgium, with the composition of Ge22As20Se58 is used to draw fibers

Paris-Sud XI, Université de

416

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

417

(Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study  

SciTech Connect (OSTI)

In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.89–1.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

Kumar, Mukesh, E-mail: Kumar.Mukesh@nims.go.jp, E-mail: mkgarg79@gmail.com [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); Umezawa, Naoto [Environmental Remediation Materials Unit, National Institute for Materials Science, Ibaraki 305-0044 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012 (Japan); TU-NIMS Joint Research Center, School of Materials Science and Engineering, Tianjin University, 92 Weijin Road, Nankai District, Tianjin (China); Imai, Motoharu [Superconducting Properties Unit, National Institute for Materials Science, Ibaraki 305-0047 (Japan)

2014-05-28T23:59:59.000Z

418

Beyond the standard Higgs after the 125 GeV Higgs discovery  

Science Journals Connector (OSTI)

...behind and beyond the discovery of the Higgs boson...after the 125 GeV Higgs discovery C. Grojean e-mail...behind and beyond the discovery of the Higgs boson...Model up to very high energy, maybe as high as the...fill the universe with dark matter and does not...

2015-01-01T23:59:59.000Z

419

A Letter of Intent to The J-PARC 50 GeV Proton Synchrotron  

E-Print Network [OSTI]

system would also be provide higher intensity muon beams for the PRISM project. The proposed studies are to be made using small numbers ( 1,000 total) of intense proton pulses from the 50-GeV ring at J of Materials for Vacuum Windows . . . . . . . . . . . . 9 1.3.2 Studies of Carbon Targets . . . . . . . . . . . . . . . . . . .

McDonald, Kirk

420

Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2  

E-Print Network [OSTI]

of integration and packaging3 . Conventional Si or III-V based semiconductor materials have a low thermoelectric-plan thermal conductivity, electrical conductivity of SiGe superlattice5,6,7,8 . There are still very few; : electrical resistivity; KT: Thermal conductivity12 . Experiments The micro-cooler structure is based on cross

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

A measurement of the energy loss spectrum of 150 GeV muons in iron  

Science Journals Connector (OSTI)

The energy loss spectrum of 150 GeV muons has been measured with a prototype of ... dP/dv per radiation length of a fractional energy loss v = ?E?/E? has been measured in the range v...= 0.01 ÷ 0.95; it is compar...

1997-09-01T23:59:59.000Z

422

Measurement of the Nucleon Structure Function in Iron Using 215- and 93-GeV Muons  

Science Journals Connector (OSTI)

This Letter presents measurements of the nucleon structure function F2(x,Q2) based on the deep-inelastic scattering of 215- and 93-GeV muons in the iron multimuon spectrometer at Fermilab. With use of a lowest-order QCD calculation, a value of ?LO=230±40(stat.)±80(syst.) MeV/c is found.

A. R. Clark; K. J. Johnson; L. T. Kerth; S. C. Loken; T. W. Markiewicz; P. D. Meyers; W. H. Smith; M. Strovink; W. A. Wenzel; R. P. Johnson; C. Moore; M. Mugge; R. E. Shafer; G. D. Gollin; F. C. Shoemaker; P. Surko

1983-11-14T23:59:59.000Z

423

The Argonne National Laboratory 6–7 GeV synchrotron X-ray source  

Science Journals Connector (OSTI)

In 1984–1985 the Argonne National Laboratory undertook a design study of a 6–7 GeV synchrotron radiation source. The effort led to a construction proposal which was reviewed early this year and recommended for funding by the US Department of Energy. This paper gives a general description of this Argonne synchrotron X-ray source.

Lee C. Teng

1987-01-01T23:59:59.000Z

424

Viscosity and elastic constants of amorphous Si and Ge Ann Witwow@ and Frans Spaepen  

E-Print Network [OSTI]

Viscosity and elastic constants of amorphous Si and Ge Ann Witwow@ and Frans Spaepen Division expansion. Viscous flow was measured by stress relaxation and was found to be Newtonian. The viscosity of the viscosity of sputter-deposited samples as a function of stress (to establish the Newtonian charac- ter

Spaepen, Frans A.

425

Nonstoichiometry and chemical purity effects in thermoelectric Ba 8 Ga 16 Ge 30 clathrate  

Science Journals Connector (OSTI)

Zone melting purification experiments have been carried out on the clathrate Ba 8 Ga 16 Ge 30 . The impurities present have been identified and their approximate concentrations measured. Trace impurities were determined to be approximately 240 parts per million (ppm) in the most impure sample to 17 ppm in the most pure sample. The temperature-dependent Seebeck coefficient thermal conductivity and electrical conductivity are reported as a function of sample purity as well as the room-temperature Hall coefficient. Microprobe analysis suggests that the samples are nonstoichiometric with excess Ge relative to Ga and there are indications of the presence of defects. Single-crystal x-ray investigations as well as synchrotron powderdiffraction measurements support the presence of defects but the x-ray data cannot accurately determine the relative amounts of Ga and Ge. Band-structure calculations in the generalized gradient approximation show that the measured Hall and Seebeck coefficients are consistent with a defect lattice of approximate stoichiometry Ba 8 Ga 14 Ge 31 . Although the figure of merit (ZT) is found to be the highest for the purest sample the dominant contribution to transport is conjectured to arise from deviations from the ideal stoichiometry and not impurities.

J. Daniel Bryan; Nick P. Blake; Horia Metiu; Galen D. Stucky; Bo B. Iversen; Rasmus D. Poulsen; Anders Bentien

2002-01-01T23:59:59.000Z

426

Antideuteron and deuteron production in midcentral Pb+Pb collisions at 158A GeV  

E-Print Network [OSTI]

Production of deuterons and antideuterons was studied by the NA49 experiment in the 23.5% most central Pb+Pb collisions at the top CERN Super Proton Synchroton (SPS) energy of ?s[subscript NN]=17.3 GeV. Invariant yields ...

Roland, Christof E.

427

Enhanced Hole Transport in Short-Channel Strained-SiGe p-MOSFETs  

E-Print Network [OSTI]

Hole mobility and velocity are extracted from scaled strained-Si[subscript 0.4]5Ge[subscript 0.55]channel p-MOSFETs on insulator. Devices have been fabricated with sub-100-nm gate lengths, demonstrating hole mobility and ...

Gomez, Leonardo

428

A search for GeV-TeV emission from GRBs with the Milagro detector  

E-Print Network [OSTI]

in the three years since the launch of Swift. Keywords: gamma-ray sources; gamma-ray bursts; astronomical observations gamma-ray PACS: 98.70.Rz,95.85.Pw Gamma-ray bursts (GRBs) have been detected up to GeV energies. B. Yodh CPIOOO, Gamma-Ray Bursts 2007: Proceedings of the Santa Fe Conference, edited by M. Galassi

California at Santa Cruz, University of

429

Sputter roughening instability on the Ge(001) surface: Energy and flux dependence  

SciTech Connect (OSTI)

We have measured surface roughening kinetics during low energy Xe ion sputtering of Ge (001) surfaces. Results are interpreted in terms of an instability theory developed by Bradley and Harper. Although the calculated magnitude of the roughening rate does not agree with the measured value, the variation of the rate with ion flux and energy is on agreement with the theory.

Chason, E.; Mayer, T.M.; Kellerman, B.K.

1995-12-31T23:59:59.000Z

430

Search for GeV Emission from Gamma-Ray Bursts Using Milagro Scaler Data  

E-Print Network [OSTI]

Search for GeV Emission from Gamma-Ray Bursts Using Milagro Scaler Data D. A. Williams to search for high energy emission from a sample of 98 gamma-ray bursts (GRB) detected from January 2000: gamma-ray sources; gamma-ray bursts; astronomical observations: gamma-ray PACS: 98.70.Rz,95.85.Pw Air

California at Santa Cruz, University of

431

Raman scattering investigation of a Ge/SiO2/Si nanocrystal system under hydrostatic pressure  

Science Journals Connector (OSTI)

We have studied the hydrostatic pressure dependence of Ge nanocrystals embedded in a SiO2 matrix on a Si substrate by Raman scattering at room temperature. During the first cycle of increasing pressure, we observed a step change in the Ge Raman mode from 310.4 to 313.8 cm-1 at ?23 kbar. The linear pressure coefficients ? obtained before and after the step change at ?23 kbar are 0.42 and 0.64 cm-1 kbar-1, respectively. Upon decreasing pressure, the Ge mode follows a single slope of pressure coefficient ?=0.64 cm-1 kbar-1. A finite-element analysis was carried out to investigate the elastic-field distribution in the Ge/SiO2/Si nanocrystal system, where the discontinuity of the specific geometric configuration with different elastic constants causes local areas of stress concentration around the interface. The step change of the Raman shifts with pressure at ?23 kbar was attributed to complete delamination between the SiO2 film and the Si substrate.

Lei Liu; K. L. Teo; Z. X. Shen; J. S. Sun; E. H. Ong; A. V. Kolobov; Y. Maeda

2004-03-23T23:59:59.000Z

432

The GeV-TeV Connection in Galactic gamma-ray Sources  

SciTech Connect (OSTI)

Recent observations by atmospheric Cherenkov telescopes such as H.E.S.S. and MAGIC have revealed a large number of new sources of very-high-energy (VHE) gamma-rays above 100 GeV, mostly concentrated along the Galactic plane. At lower energies (100 MeV - 10 GeV) the satellite-based instrument EGRET revealed a population of sources clustering along the Galactic Plane. Given their adjacent energy bands a systematic correlation study between the two source classes seems appropriate. While only a few of the sources connect, both in terms of positional coincidence and spectral consistency, most of the detections occur only in one or the other energy domain. In these cases, for the first time consistent upper limits in the other energy band have been derived. Here, the populations of Galactic sources in both energy domains are characterized on observational as well as on theoretical grounds, followed by an interpretation on their similarities and differences. The observational data at this stage suggest rather different major source populations at GeV and TeV energies. With regards to preparations for the upcoming GLAST mission that will cover the energy range bridging GeV and TeV instruments this paper investigates the connection between the population of sources in these bands and concludes with predictions for commonly observable sources for GLAST-LAT detections.

Funk, S.; /KIPAC, Menlo Park; Reimer, O.; /Stanford U., HEPL /KIPAC, Menlo Park; Torres, Diego F.; /ICREA, Barcelona; Hinton, J.A.; /Leeds U.

2007-09-28T23:59:59.000Z

433

P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1  

E-Print Network [OSTI]

the temperature of the device below ambient. For a material to be a good thermoelectric cooler, it must have]. SiGe is a good thermoelectric material especially for high temperature applications [11 element thermoelectric devices, and it will enable us to achieve large cooling capacities with relatively

434

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n)  

E-Print Network [OSTI]

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n.Introduction Green polynomials Q~~(q) of GLn(Fq), where ~, ~ are partitions of n, were fi* *rst introduced by J.A.Green [G] in 1955 in a combinatorial framework of symmetric f* *unc- tions

Shoj, Toshiaki

435

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n)  

E-Print Network [OSTI]

GREEN FUNCTIONS ASSOCIATED TO COMPLEX REFLECTION GROUPS G(e, 1, n) TOSHIAKI SHOJI Department of Mathematics Science University of Tokyo Noda, Chiba 278­8510, Japan 0. Introduction Green polynomials Q µ # (q) of GL n (F q ), where #, µ are partitions of n, were first introduced by J.A.Green [G] in 1955

Shoj, Toshiaki

436

Adaptive Friction Compensation for Servo J. Wang, S. S. Ge, and T. H. Lee  

E-Print Network [OSTI]

Adaptive Friction Compensation for Servo Mechanisms J. Wang, S. S. Ge, and T. H. Lee Department@nus.edu.sg Abstract Friction exists in all machines having relative motion, and plays an important role in many servo, accurate friction modeling and effective compensation techniques have to be investigated. In this chapter

Ge, Shuzhi Sam

437

Ion impact energy distribution and sputtering of Si and Ge M. Z. Hossain,a)  

E-Print Network [OSTI]

suggest that the energy deposition distri- bution differs from Sigmund's ellipsoidal assumption. It hasIon impact energy distribution and sputtering of Si and Ge M. Z. Hossain,a) J. B. Freund, and H. T 2012) The spatial distribution of ion deposited energy is often assumed to linearly relate to the local

Freund, Jonathan B.

438

The Jefferson Lab 12 GeV program on nucleon structure  

SciTech Connect (OSTI)

This slide-show presents the experiments planned at JLab with their 12 GeV upgrade. Experiments reported address: the use of hadron spectra as probes of QCD; the transverse structure of hadrons; the longitudinal structure of hadrons; the 3-dimensional structure of hadrons; hadrons and cold nuclear matter; and low-energy tests of the Standard Model and fundamental symmetries.

Burkert, Volker D. [JLAB

2013-10-01T23:59:59.000Z

439

Short communication Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries  

E-Print Network [OSTI]

Short communication Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries N a Department of Materials Science and Engineering, University of Florida, 100 Rhines Hall, PO Box 116400, Gainesville, FL 32611-6400, USA b Department of Electronic Materials Engineering, Research School of Physics

Volinsky, Alex A.

440

Optimization of antibody separation Master thesis at R&D, Protein Tools, GE Healthcare, Uppsala  

E-Print Network [OSTI]

Optimization of antibody separation Master thesis at R&D, Protein Tools, GE Healthcare, Uppsala point but in most cases the separation needs some optimization work to give the best possible starting protocol and then optimize the protocol by identifying important experimental factors that may

Uppsala Universitet

Note: This page contains sample records for the topic "ge lighting ge" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Intersubband absorption in boron-doped multiple Ge quantum dots J. L. Liu,a)  

E-Print Network [OSTI]

Intersubband absorption in boron-doped multiple Ge quantum dots J. L. Liu,a) W. G. Wu, A. Balandin; accepted for publication 3 November 1998 The intersubband absorption in self-assembled boron-doped multiple and undoped Si barriers. The infrared absorption as a function of wavelength is measured by Fourier transform

442

Empirical Formula for Pion Production in Proton-Proton Collisions up to 1500 GeV  

Science Journals Connector (OSTI)

A semiempirical formula which well represents the double-differential cross section for pion production in high-energy p p collisions is presented. The formula agrees with all data between 20 and 1500 GeV to within a factor of ?2 and is consistent with scaling and limiting fragmentation. Also presented is a set of momentum spectra at some interesting energies.

C. L. Wang

1973-05-01T23:59:59.000Z

443

The Energy Spectrum of the Blazar Markarian 421 Above 130 GeV  

E-Print Network [OSTI]

Markarian 421 (Mrk 421) was the first blazar detected at gamma-ray energies above 300 GeV, and it remains one of only twelve TeV blazars detected to date. TeV gamma-ray measurements of its flaring activity and spectral variability have placed constraints on models of the high-energy emission from blazars. However, observations between 50 and 300 GeV are rare, and the high-energy peak of the spectral energy distribution (SED), predicted to be in this range, has never been directly detected. We present a detection of Mrk 421 above 100 GeV as made by the Solar Tower Atmospheric Cherenkov Effect Experiment (STACEE) during a multiwavelength campaign in early 2004. STACEE is a ground-based atmospheric Cherenkov telescope using the wavefront sampling technique to detect gamma rays at lower energies than achieved by most imaging Cherenkov telescopes. We also outline a method for reconstructing gamma-ray energies using a solar heliostat telescope. This technique was applied to the 2004 data, and we present the differential energy spectrum of Mrk 421 above 130 GeV. Assuming a differential photon flux dN/dE proportional to E^-a, we measure a spectral index a = 2.1 +/- 0.2 (statistical) +0.2/-0.1 (systematic). Finally, we discuss the STACEE spectrum in the context of the multiwavelength results from the same epoch.

J. E. Carson; J. Kildea; R. A. Ong; J. Ball; D. A. Bramel; C. E. Covault; D. Driscoll; P. Fortin; D. M. Gingrich; D. S. Hanna; T. Lindner; C. Mueller; A. Jarvis; R. Mukherjee; K. Ragan; R. A. Scalzo; D. A. Williams; J. Zweerink

2006-12-19T23:59:59.000Z

444

Ge surface-energy-driven secondary grain growth via two-step annealing  

Science Journals Connector (OSTI)

Abstract A two-step annealing method with a low thermal budget is proposed for advanced surface-energy-driven secondary grain growth of Ge films without any agglomeration. In the first-step annealing, the normal grain growth from as-deposited poly-crystalline Ge films was induced to make the grain size equivalent to the film thickness at 800 °C. After the subsequent second-step annealing at 900 °C, the much larger secondary grains were obtained than those by single-step annealing at 900 °C. The possible explanation regarding the final microstructure of the two-step annealed film is proposed. The two-step annealing was able to form the microstructure of Ge thin film with very large-grained matrix without any agglomeration, resulting in higher carrier mobility. Therefore, the proposed two-step annealing is believed to be a promising process applicable for channel formation processes in the next-generation Ge thin film transistors for 3D integrated circuits and vertical NAND flash memories.

Sangsoo Lee; Yong-Hoon Son; Yongjo Park; Kihyun Hwang; Yoo Gyun Shin; Euijoon Yoon

2014-01-01T23:59:59.000Z

445

GE Healthcare Data File 28-4046-59 AA Tagged protein purification  

E-Print Network [OSTI]

chromatography (IMAC). The column allows fast and simple small-scale purifications and is a valuable toolGE Healthcare Data File 28-4046-59 AA Tagged protein purification His SpinTrap His Spin and one purification run takes approx. 10 min. His SpinTrap allows: · High protein binding capacity

Lebendiker, Mario

446

GeM-REM: Generative Model-driven Resource efficient ECG Monitoring in Body Sensor Networks  

E-Print Network [OSTI]

GeM-REM: Generative Model-driven Resource efficient ECG Monitoring in Body Sensor Networks Sidharth electrocardiogram (ECG) monitoring. In such systems, sampling the ECG at clinically recommended rates (250 Hz, there is a need for reducing the energy consumption and data size at the sensor, while maintaining the ECG quality

Poovendran, Radha

447

Nature of $?$-deformation in Ge and Se nuclei and the triaxial projected shell model description  

E-Print Network [OSTI]

Recent experimental data have demonstrated that $^{76}$Ge may be a rare example of a nucleus exhibiting rigid $\\gamma$-deformation in the low-spin regime. In the present work, the experimental analysis is supported by microscopic calculations using the multi-quasiparticle triaxial projected shell model (TPSM) approach. It is shown that to best describe the data of both yrast and $\\gamma$-vibrational bands in $^{76}$Ge, a rigid-triaxial deformation parameter $\\gamma\\approx 30^\\circ$ is required. TPSM calculations are discussed in conjunction with the experimental observations and also with the published results from the spherical shell model. The occurrence of a $\\gamma\\gamma$-band in $^{76}$Ge is predicted with the bandhead at an excitation energy of $ \\sim$ 2.5 MeV. We have also performed TPSM study for the neighboring Ge- and Se-isotopes and the distinct $\\gamma$-soft feature in these nuclei is shown to result from configuration mixing of the ground-state with multi-quasiparticle states.

G. H. Bhat; W. A. Dar; J. A. Sheikh; Y. Sun

2014-01-08T23:59:59.000Z

448

3 GeV Booster Synchrotron Conceptual Design Report  

SciTech Connect (OSTI)

Synchrotron light cna be produced from a relativistic particle beam circulating in a storage ring at extremely high intensity and brilliance over a large spectral region reaching from the far infrared regime to hard x-rays. The particles, either electrons or positrons, radiate as they are deflected in the fields of the storage ring bending magnets or of magnets specially optimized for the production of synchrotron light. The synchrotron light being very intense and well collimated in the forward direction has become a major tool in a large variety of research fields in physics, chemistry, material science, biology, and medicine.

Wiedemann, Helmut

2009-06-02T23:59:59.000Z

449

Silicide/strained Si[sub 1[minus]x]Ge[sub x] Schottky-barrier infrared detectors  

SciTech Connect (OSTI)

By employing a thin silicon sacrificial cap layer for silicide formation the authors have successfully demonstrated Pd[sub 2]Si/ strained Si[sub 1[minus]x]Ge[sub x] Schottky-barrier infrared detectors with extended cutoff wavelengths. The sacrificial silicon eliminates the segregation effects and Fermi level pinning which occur if the metal reacts directly with the Si[sub 1[minus]x]Ge[sub x] alloy. The Schottky barrier height of the silicide/strained Si[sub 1[minus]x]Ge[sub x] detector decreases with increasing Ge fraction, allowing for tuning of the detector's cutoff wavelength. The cutoff wavelength has been extended beyond 8[mu]m in PtSi/Si[sub 0.85]Ge[sub 0.15] detectors. The authors have shown that high quantum efficiency and near-ideal dark current can be obtained from these detectors.

Xiao, X.; Sturm, J.C.; Parihar, S.R.; Lyon, S.A. (Princeton Univ., NJ (United States)); Meyerhofer, D.; Palfrey, S.; Shallcross, F.V. (David Sarnoff Research Center, Princeton, NJ (United States))

1993-04-01T23:59:59.000Z

450

Magnetic, Caloric and Crystallographic Properties of Dy5(SixGe1-x)4 Alloys  

SciTech Connect (OSTI)

Polycrystals of the intermetallic compound of the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system, where x = 0, 0.25, 0.5, 0.625, 0.675, 0.725, 0.75, 0.775, 0.825, 0.875, and 1, have been prepared by electric-arc-melting on water-cooled copper hearth in an argon atmosphere. A study of phase relationships and crystallography in the pseudobinary system Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} using X-ray powder diffraction data and optical metallography was completed. It revealed that silicides in the composition range from 0.825 to 1 crystallize in the Gd{sub 5}Si{sub 4}-type crystal structure: germanides in the composition range from 0 to 0.625 crystallize in the Sm{sub 5}Ge{sub 4}-type structure, and alloys with intermediate composition range from 0.675 to 0.775 crystallize in the monoclinic Gd{sub 5}Si{sub 2}Ge{sub 2}-type structure. The -{Delta}S{sub m} values were determined from magnetization measurements for 7 alloys. The alloys with a monoclinic crystal structure which belong to an intermediate phase region have large MCE value, which exceeds those observed in the other two phase regions by 300 to 500%. The nature of the observed magnetic and structural transformations in the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system seems to be similar with those reported for the Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system. However, the interval and concentration range of three different phase regions in the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} system are different from that observed in Gd-based alloys. A non-collinear ordering of magnetic moments at low temperature was observed for the alloys with monoclinic crystal structure. The Dy{sub 5}Si{sub 3}Ge alloy exhibited FM phase transition below Curie temperature. A series of magnetic transitions were observed at low temperature in the Dy{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} alloys. The number of transitions increased and the magnetization decreased with increasing germanium content in the alloys. The -{Delta}S{sub m} and -{Delta}T values were calculated from heat capacity data for Dy{sub 5}Si{sub 3.5}Ge{sub 0.5} and Dy{sub 5}Si{sub 4} alloys only, due to the fragile nature of the germanides-rich samples. Based on the MCe values, the alloys from the orthorhombic Dy{sub 5}Si{sub 4}-based solid solution and the intermediate monoclinic phase regions may be useful magnetic refrigerant materials in the temperature range {approx}50K to -160K.

Vitaliy Vladislavovich Ivchenko

2002-07-19T23:59:59.000Z

451

Thermodynamic and transport properties of single crystalline RCo2Ge2 (R=Y, La–Nd, Sm–Tm)  

SciTech Connect (OSTI)

Single crystals of RCo2Ge2 (R=Y, La–Nd, Sm–Tm) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction; anisotropic, temperature and field dependent magnetization; temperature and field dependent, in-plane resistivity; and specific heat measurements. In this series, the majority of the moment-bearing members order antiferromagnetically; YCo2Ge2 and LaCo2Ge2 are non-moment-bearing. Ce is trivalent in CeCo2Ge2 at high temperatures, and exhibits an enhanced electronic specific heat coefficient due to the Kondo effect at low temperatures. In addition, CeCo2Ge2 shows two low-temperature anomalies in temperature-dependent magnetization and specific heat measurements. Three members (R=Tb–Ho) have multiple phase transitions above 1.8 K. Eu appears to be divalent with total angular momentum L =0. Both EuCo2Ge2 and GdCo2Ge2 manifest essentially isotropic paramagnetic properties consistent with J =S =7/2. Clear magnetic anisotropy for rare-earth members with finite L was observed, with ErCo2Ge2 and TmCo2Ge2 manifesting planar anisotropy and the rest members manifesting axial anisotropy. The experimentally estimated crystal electric field (CEF) parameters B 20 were calculated from the anisotropic paramagnetic ? ab and ? c values and follow a trend that agrees well with theoretical predictions. The ordering temperatures, TNTN, as well as the polycrystalline averaged paramagnetic Curie–Weiss temperature, ?avg, for the heavy rare-earth members deviate from the de Gennes scaling, as the magnitude of both is the highest for Tb, which is sometimes seen for extremely axial systems. Except for SmCo2Ge2, metamagnetic transitions were observed at 1.8 K for all members that ordered antiferromagnetically.

Kong, Tai [Ames Laboratory; Cunningham, Charles E. [Grinnell College; Taufour, Valentin [Iowa State University; Budko, Sergey L. [Ames Laboratory; Buffon, Malinda L.C. [Ames Laboratory; Lin, Xiao [Ames Laboratory; Emmons, Heather [Grinnell College; Canfield, Paul C. [Ames Laboratory

2014-02-04T23:59:59.000Z

452

Iron meteorites with low Ga and Ge concentrations—composition, structure and genetic relationships  

Science Journals Connector (OSTI)

Twenty-one iron meteorites with Ge contents below 1 ?g/g, including nine belonging to groups IIIF and IVB, have been analyzed by instrumental neutron activation analysis (INAA) for the elements Co, Cr, As, Au, Re, Ir and W. Groups IIIF and IVB show positive correlations of Au, As and Co (IIIF only) with published Ni analyses, and negative correlations of Ir, Re, Cr (IVB only) and W (IIIF only) with Ni. On element-Ni plots, the gradients of the least squares lines are similar to those of many other groups, excluding IAB and IIICD. With the inclusion of a new member, Klamath Falls, group IIIF has the widest range of Au, As and Co contents of any group and the steepest gradients on plots of these elements against Ni. It is likely that these trends in groups IIIF and IVB were produced by fractionation of elements between solid and liquid metal, probably during fractional crystallization. It has been suggested that some of the 15 irons with groups might be related. However, the INAA data indicate that no two are as strongly related as two group members. These low-Ge irons and the members of groups IIIF, IVA and IVB tend to have low concentrations of As, Au and P, low CoNi ratios and high Cr contents. The depletion of the more volatile elements probably results from incomplete condensation into the metal from the solar nebula. The structures of low-Ge irons generally reflect fast cooling rates (20–2000 K Myr?1). When data for all iron meteorites are plotted on a logarithmic graph of cooling rate against Ge concentration and results for related irons are averaged, there is a significant negative correlation. This suggests that metal grains which inefficiently condensed Ge and other volatile elements tended to accrete into small parent bodies.

Edward R.D. Scott

1978-01-01T23:59:59.000Z

453

Structure of GeO2 glass at pressures up to 8.6 GPa  

Science Journals Connector (OSTI)

The structure of GeO2 glass at pressures extending from ambient to 8.6(5) GPa was measured at ?25?°C by using in situ neutron diffraction. The results show a gradual change in the intermediate range order with increasing density as manifested by an increase in position and reduction in height of the first sharp diffraction peak in the total structure factor. By contrast, the local ordering, as characterized by the Ge-O bond length and coordination number, remains constant for the pressure range from ambient to ?5?GPa. As the pressure is increased further to 8.6(5) GPa, however, a steady increase from 4.0(1) to 4.9(1) is observed in the Ge-O coordination number as the corresponding distance increases from 1.73(2) to 1.77(2)?Å. The results are therefore consistent with the operation of two densification mechanisms, the low-pressure one associated with squeezing the open network of corner-linked tetrahedral motifs and the high-pressure one associated with a transformation of those motifs. There is no evidence in support of an abrupt transformation of the network structure over the investigated pressure range. The structure of permanently densified GeO2 glass was also investigated by high-energy x-ray diffraction. The results show that there is a threshold pressure at ?5?GPa below which the structure of a recovered glass is similar to that of the high-pressure material. Above the threshold pressure there is, however, a reorganization of both the local and intermediate range ordering once the pressure is released and the Ge-O coordination number returns to 4.

James W. E. Drewitt; Philip S. Salmon; Adrian C. Barnes; Stefan Klotz; Henry E. Fischer; Wilson A. Crichton

2010-01-11T23:59:59.000Z

454

Measuring W photon couplings in a 500 GeV e sup + e sup - collider  

SciTech Connect (OSTI)

The Standard Model gives definite predictions for the W-photon couplings. Measuring them would test an important ingredient of the model. In this work we study the capability of a 500 GeV e{sup +}e{sup {minus}} collider to measure these couplings. We study the most general C and P conserving WW{lambda} vertex. This vertex contains two free parameters, {kappa} and {lambda}. We look at three processes: e{sup +}e{sup {minus}} {yields} W{sup +}W{sup {minus}}, e{lambda} {yields} W{nu} and {lambda}{lambda} {yields} W{sup +}W{sup {minus}}. For each process we present analytical expressions of helicity amplitudes for arbitrary values of {kappa} and {lambda}. We consider three different sources for the initial photon(s). The first two are breamsstrahlung and beamstrahlung (photon radiation induced by the collective fields of the opposite bunch). Both occur naturally in the collider environment. The third is a photon beam generated by scattering low energy laser light off a high energy electron beam. We examine potential observables for each process, calculating their sensitivity to {kappa} and {lambda}, and estimating the accuracy with which they can be measured. Assuming Standard Model values are actually measured, we present the region in the {kappa}-{lambda} plane to which the W couplings can be restricted with a given confidence level. We find that combining the three processes, one can measure {kappa} and {lambda} with accuracy of 0.01--0.02.

Yehudai, E.

1991-08-01T23:59:59.000Z

455

Study on the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface and its impacts on Ge{sub 1?x}Sn{sub x} tunneling transistor  

SciTech Connect (OSTI)

In this paper, we employ first-principle calculation to investigate the Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interface, and then evaluate its impacts on Ge{sub 1?x}Sn{sub x} tunneling field-effect transistor (TFET). First-principle calculations of Ge{sub 1?x}Sn{sub x}/HfO{sub 2} interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge{sub 1?x}Sn{sub x} TFET are investigated. Removing the Sn atom from the first atom layer of Ge{sub 1?x}Sn{sub x} in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge{sub 1?x}Sn{sub x} TFET.

Qiu, Yingxin; Wang, Runsheng, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn; Huang, Qianqian; Huang, Ru, E-mail: ruhuang@pku.edu.cn, E-mail: r.wang@pku.edu.cn [Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871 (China)

2014-06-21T23:59:59.000Z

456

Contactless monitoring of Ge content and B concentration in ultrathin single and double layer Si{sub 1-x}Ge{sub x} epitaxial films using multiwavelength micro-Raman spectroscopy  

SciTech Connect (OSTI)

Non-contact monitoring of Ge content and B concentration in single and double Si{sub 1-x}Ge{sub x} epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determined by secondary ion mass spectroscopy (SIMS) depth profiling showed very strong correlation with the position and full-width-at-half-maximum of the Si-Si peak from the Si{sub 1-x}Ge{sub x} epitaxial layers as determined by Raman measurements. High resolution X-ray diffraction (HRXRD) characterization was done for all wafers to determine Ge and B sensitivity and form comparisons with Raman and SIMS analysis. The non-destructive, in-line monitoring of Ge content and B concentration of single and double Si{sub 1-x}Ge{sub x} epitaxial layers with thickness ranging from 5 {approx} 120 nm, on small area monitoring pads, was successfully demonstrated by multiwavelength micro-Raman spectroscopy during epitaxial process optimization, material property verification, and quality control applications.

Chang, Chun-Wei; Hong, Min-Hao; Lee, Wei-Fan; Lee, Kuan-Ching; Jang Jian, Shiu-Ko; Chuang, Yen; Fan, Yu-Ta [Taiwan Semiconductor Manufacturing Company, Ltd., 8, Li-Hsin Rd. 6, Hsinchu Science Park, Hsinchu, 300-77, Taiwan (China); Hasuike, Noriyuki; Harima, Hiroshi [Kyoto Institute of Technology, Matsugasaki, Kyoto, 606-8585 (Japan); Ueda, Takeshi; Ishigaki, Toshikazu; Kang, Kitaek; Sik Yoo, Woo [WaferMasters, Inc., 246 East Gish Road, San Jose, California 95112 (United States)

2012-03-15T23:59:59.000Z

457

Optical contrast and laser-induced phase transition in GeCu{sub 2}Te{sub 3} thin film  

SciTech Connect (OSTI)

Fast crystallization and low power amorphization are essential to achieve rapid data recording and low power consumption in phase-change memory. This work investigated the laser-induced phase transition behaviors of GeCu{sub 2}Te{sub 3} film based on the reflectance of amorphous and crystalline states. The GeCu{sub 2}Te{sub 3} film showed a reflectance decrease upon crystallization, which was the opposite behavior in Ge{sub 2}Sb{sub 2}Te{sub 5} film. The crystallization starting time of the as-deposited GeCu{sub 2}Te{sub 3} film was as fast as that of the as-deposited Ge{sub 2}Sb{sub 2}Te{sub 5} film. Furthermore, the GeCu{sub 2}Te{sub 3} crystalline film was found to be reamorphized by laser irradiation at lower power and shorter pulse width than the Ge{sub 2}Sb{sub 2}Te{sub 5}.

Saito, Yuta; Sutou, Yuji; Koike, Junichi [Department of Materials Science, Tohoku University, 6-6-11-1016 Aoba-yama, Aoba-ku, Sendai 980-8579 (Japan)] [Department of Materials Science, Tohoku University, 6-6-11-1016 Aoba-yama, Aoba-ku, Sendai 980-8579 (Japan)

2013-02-04T23:59:59.000Z

458

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation  

SciTech Connect (OSTI)

A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.

Zhou, Tong; Zhong, Zhenyang, E-mail: zhenyangz@fudan.edu.cn [State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433 (China)

2014-02-01T23:59:59.000Z

459

Dielectron Production in C+C Collisions at 1 GeV/u and the Solution to the DLS Puzzle  

E-Print Network [OSTI]

The production of e+e- pairs in C+C collisions at 1 GeV/u was investigated with the HADES experiment at GSI, Darmstadt. In the invariant-mass region $ 0.15\\: GeV/c^{2} \\leq M_{ee} \\leq 0.5\\: GeV/c^{2}$ the measured pair yield shows a strong excess above the contribution expected from hadron decays after freeze-out. The data are in good agreement with the results of the former DLS experiment for the same system and energy.

Y. C. Pachmayer; for the HADES collaboration

2008-04-24T23:59:59.000Z

460

u.s. DEPARTIIIENT OF ENERGY EERE PROJECT MA N A GE M E~ T CENT  

Broader source: Energy.gov (indexed) [DOE]

MA N A GE M E~ T CENT MA N A GE M E~ T CENT ER NEPA DETERlIlINATION Page 1 of2 RECIPIENT:Power Environmental Energy Research Institute STATE: CO PROJECT TITLE: Novel Multidimensional Tracers for Geolhermallnter-Well Diagnostics Funding Opportunity Announcement Number DE-PS36-09G099018 Procurement Instrument Number OE·EEOOO3032 NEPA Control Number GFO-1 0-345 CID Number G03032 Based on my review orlhe Information concerning the proposed action, as NEPA Compliance Officer (authoriud under DOE Order 4SI.IA),1 have made the following determination: ex, EA, [IS APPENDIX AND NUMBER: Description: 83.1 Onsile and offsite site characterization and environmental monitoring. including siting, construction (or modification), operation, and dismantlement or closing (abandonment) of characterization and monitoring devices and siting,

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461

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Broader source: Energy.gov (indexed) [DOE]

CONTRACT NO. QZ001 UNDER CONTRACT NO. QZ001 UNDER COOPERATIVE AGREEMENT NO. DE-FC07-051D14635 BETWEEN DOMINION NUCLEAR NORTH ANNA LLC ("DOMINION") AND DOE; W(A)-05-025; CH-1291 The Petitioner, GE, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE or its subcontractors, arising from its participation under the above referenced cooperative agreement entitled "North Anna Construction and Operating License Demonstration Project." The objective of the North Anna Construction and Operating License Demonstration Project is to demonstrate the combined Construction and Operating License ("COL") process under 10 CFR 52 to promote new Nuclear Power Plant

462

Categorical Exclusion Determination Form Proposed Action Title: (0675-1534) GE Global Research -  

Broader source: Energy.gov (indexed) [DOE]

34) GE Global Research - 34) GE Global Research - Control Enabling Solutions with Ultrathin Strain and Temperature Sensor System for Reduced Battery Life Cycle Cost Program or Field Office: Advanced Research Projects Agency - Energy LocationCs) CCity/County/State): Niskayuna, NY; Ann Arbor, MI; Dearborn, MI Proposed Action Description: Funding will support efforts to develop a a novel sensor system with supporting multi-physics models to increase battery cell lifetime and extend battery range for electric vehicle applications. Proposed work will consist of: (1) development and fabrication a novel multi-measurand sensor capable of measuring strain and temperature across multiple battery cells; (2) performance of strain and temperature testing and development and validation of multi-physics models; (3)

463

REQUEST BY GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND  

Broader source: Energy.gov (indexed) [DOE]

4 4 Statement of Considerations REQUEST BY GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS TO INVENTIONS MADE UNDER CONTRACT NO. DE-FC26-00NT40993 ENTITLED "VARIABLE SPEED INTEGRATED INTELLIGENT BLOWER FOR HIGH EFFICIENCY HEATING VENTILATION AND AIR CONDITIONING"; W(A)-01-019, CH1066. GE has requested an advance waiver of domestic and foreign patent rights to inventions its employees may conceive or first actually reduce to practice in the performance of Contract No. DE-FC26-00NT40993. As brought out in the attached waiver petition, the scope of work includes the development and marketing of an Electronically Cormutated Motor (ECM) and fan combination. The combination utilizes a common rotating shaft and integral cooling and advanced blower fan

464

Radiation damage induced by GeV electrons in W-Re and Cu targets  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 3 UCRL-JC-148049 July 2002 Linear Collider Collaboration Tech Notes Radiation Damage Induced by GeV Electrons in W-Re Targets for Next Generation Linear Colliders M.-J. Caturla 1* , S. Roesler 2 , V. K. Bharadwaj 3 , D. C. Schultz 3 , J. C. Sheppard 3 , J. Marian 1 , B. D. Wirth 1 , W. Stein 1 and A. Sunwoo 1 1 Lawrence Livermore National Laboratory Livermore, CA 2 CERN, CH-1211 Geneva 23, Switzerland 3 Stanford Linear Accelerator Center Menlo Park, California s: We have studied the structural damage of W-Re targets produced by electrons with energies of several GeV and under different conditions of total number of electrons, beam shape and target depth. We report the differences in damage levels for different designs considered in the construction of the next generation of linear accelerators, and discuss the possible effects in the lifetime

465

Optical characteristics of pulsed laser deposited Ge-Sb-Te thin films studied by spectroscopic ellipsometry  

SciTech Connect (OSTI)

Pulsed laser deposition technique was used for the fabrication of (GeTe){sub 1-x}(Sb{sub 2}Te{sub 3}){sub x} (x = 0, 0.33, 0.50, 0.66, and 1) amorphous thin films. Scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, optical reflectivity, and sheet resistance temperature dependences as well as variable angle spectroscopic ellipsometry measurements were used to characterize as-deposited (amorphous) and annealed (rocksaltlike) layers. In order to extract optical functions of the films, the Cody-Lorentz model was applied for the analysis of ellipsometric data. Fitted sets of Cody-Lorentz model parameters are discussed in relation with chemical composition and the structure of the layers. The GeTe component content was found to be responsible for the huge optical functions and thickness changes upon amorphous-to-fcc phase transition.

Nemec, P. [Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Prikryl, J.; Frumar, M. [Department of General and Inorganic Chemistry, Faculty of Chemical Technology, University of Pardubice, Studentska 573, 53210 Pardubice (Czech Republic); Nazabal, V. [Equipe Verres et Ceramiques, UMR-CNRS 6226, Sciences Chimiques de Rennes (SCR), Universite de Rennes 1, 35042 Rennes Cedex (France)

2011-04-01T23:59:59.000Z

466

MeV-GeV emission from neutron-loaded short gamma-ray burst jets  

E-Print Network [OSTI]

Recent discovery of the afterglow emission from short gamma-ray bursts suggests that binary neutron star or black hole-neutron star binary mergers are the likely progenitors of these short bursts. The accretion of neutron star material and its subsequent ejection by the central engine implies a neutron-rich outflow. We consider here a neutron-rich relativistic jet model of short bursts, and investigate the high energy neutrino and photon emission as neutrons and protons decouple from each other. We find that upcoming neutrino telescopes are unlikley to detect the 50 GeV neutrinos expected in this model. For bursts at z~0.1, we find that GLAST and ground-based Cherenkov telescopes should be able to detect prompt 100 MeV and 100 GeV photon signatures, respectively, which may help test the neutron star merger progenitor identification.

Soebur Razzaque; Peter Meszaros

2006-06-28T23:59:59.000Z

467

N-type doping of Ge by As implantation and excimer laser annealing  

SciTech Connect (OSTI)

The diffusion and activation of arsenic implanted into germanium at 40?keV with maximum concentrations below and above the solid solubility (8?×?10{sup 19}?cm{sup ?3}) have been studied, both experimentally and theoretically, after excimer laser annealing (??=?308?nm) in the melting regime with different laser energy densities and single or multiple pulses. Arsenic is observed to diffuse similarly for different fluences with no out-diffusion and no formation of pile-up at the maximum melt depth. The diffusion profiles have been satisfactorily simulated by assuming two diffusivity states of As in the molten Ge and a non-equilibrium segregation at the maximum melt depth. The electrical activation is partial and decreases with increasing the chemical concentration with a saturation of the active concentration at 1?×?10{sup 20}?cm{sup ?3}, which represents a new record for the As-doped Ge system.

Milazzo, R.; Napolitani, E., E-mail: enrico.napolitani@unipd.it; De Salvador, D.; Mastromatteo, M.; Carnera, A. [CNR-IMM MATIS and Dipartimento di Fisica Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy); Impellizzeri, G.; Boninelli, S.; Priolo, F.; Privitera, V. [CNR-IMM MATIS and Dipartimento di Fisica e Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Fisicaro, G.; Italia, M.; La Magna, A. [CNR-IMM, Z.I. VIII Strada 5, 95121 Catania (Italy); Cuscunà, M.; Fortunato, G. [CNR-IMM, Via del Fosso del Cavaliere 100, 00133 Roma (Italy)

2014-02-07T23:59:59.000Z

468

Inverse seesaw in NMSSM and 126 GeV Higgs boson  

Science Journals Connector (OSTI)

We consider extensions of the next-to-minimal supersymmetric model (NMSSM) in which the observed neutrino masses are generated through a TeV scale inverse seesaw mechanism. The new particles associated with this mechanism can have sizable couplings to the Higgs field which can yield a large contribution to the mass of the lightest CP-even Higgs boson. With this new contribution, a 126 GeV Higgs is possible along with order of 200 GeV masses for the stop quarks for a broad range of tan ?. The Higgs production and decay in the diphoton channel can be enhanced due to this new contribution. It is also possible to solve the little hierarchy problem in this model without invoking a maximal value for the NMSSM trilinear coupling and without severe restrictions on the value of tan ?.

Ilia Gogoladze; Bin He; Qaisar Shafi

2013-01-01T23:59:59.000Z

469

Production cross sections of tritium in high energy nuclear reactions with 12 GeV protons  

Science Journals Connector (OSTI)

Production cross sections of tritium in high energy nuclear reactions with 12 GeV protons were measured for Al, Co, Cu, Nb, Ag, In, Sn, Au and Pb targets. Large production cross sections of > 500 (mb) were obtained for Au and Pb targets. From their atomic weight dependence, tritium cross sections (?) in mb can be expressed as a function of target atomic weight (A) by the following simple equation: ?(A) = 95 exp(A107), which should be useful for predicting unknown cross sections. Together with other existing data at different energies, the present data suggest that there is no energy dependence of tritium cross section at proton energies above several GeV.

Masaharu Noguchi; Taichi Miura; Kenjiro Kondo; Takenori Suzuki; Yuichi Oki; Minoru Takasaki; Kazuhiro H. Tanaka; Masaharu Ieiri

1991-01-01T23:59:59.000Z

470

Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs  

SciTech Connect (OSTI)

Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

471

Measurement of inclusive charged current interactions on carbon in a few-GeV neutrino beam  

E-Print Network [OSTI]

The SciBooNE Collaboration reports a measurement of inclusive charged current interactions of muon neutrinos on carbon with an average energy of 0.8~GeV using the Fermilab Booster Neutrino Beam. We compare our measurement with two neutrino interaction simulations: NEUT and NUANCE. The charged current interaction rates (product of flux and cross section) are extracted by fitting the muon kinematics, with a precision of 6-15% for the energy dependent and 3% for the energy integrated analyses. We also extract CC inclusive interaction cross sections from the observed rates, with a precision of 10-30% for the energy dependent and 8% for the energy integrated analyses. This is the first measurement of the CC inclusive cross section on carbon around 1 GeV. These results can be used to convert previous SciBooNE cross section ratio measurements to absolute cross section values.

jima, Y Naka; Brice, S J; Bugel, L; Catala-Perez, J; Cheng, G; Conrad, J M; Djurcic, Z; Dore, U; Finley, D A; Franke, A J; Giganti, C; Gomez-Cadenas, J J; Guzowski, P; Hanson, A; Hayato, Y; Hiraide, K; Jover-Manas, G; Karagiorgi, G; Katori, T; Kobayashi, Y K; Kobilarcik, T; Kubo, H; Kurimoto, Y; Louis, W C; Loverre, P F; Ludovici, L; Mahn, K B M; Mariani, C; Masuike, S; Matsuoka, K; McGary, V T; Metcalf, W; Mills, G B; Mitsuka, G; Miyachi, Y; Mizugashira, S; Moore, C D; Nakaya, T; Napora, R; Nienaber, P; Orme, D; Otani, M; Russell, A D; Sanchez, F; Shaevitz, M H; Shibata, T -A; Sorel, M; Stefanski, R J; Takei, H; Tanaka, H -K; Tanaka, M; Tayloe, R; Taylor, I J; Tesarek, R J; Uchida, Y; Van de Water, R; Walding, J J; Wascko, M O; White, H B; Yokoyama, M; Zeller, G P; Zimmerman, E D

2010-01-01T23:59:59.000Z

472

A2+ Mass Spectrum in ?+p Interactions at 3.7 GeVc  

Science Journals Connector (OSTI)

A study of the A2+ mass spectrum in ?+p interactions at 3.7 GeVc is presented. For a cut of t?=0.1-2.0 GeV2 and on eliminating the ?++ we find that the three-pion mass spectrum in the A2+ region is fitted by the dipole formula with a confidence level of 53% and a single Breit-Wigner formula with a confidence level of 11%. Our result thus favors A2+ splitting although a single Breit-Wigner fit cannot be ruled out. We also report the A2+ decay branching fractions measured over all t? values. They are 0.78 ± 0.05, 0.15 ± 0.04, 0.06 ± 0.03, and < 0.02 for ??, ??, KK¯, and ?? ?, respectively, in good agreement with other experiments.

K. W. J. Barnham, G. S. Abrams, W. R. Butler, D. G. Coyne, G. Goldhaber, B. H. Hall, J. MacNaughton, and G. H. Trilling

1971-06-14T23:59:59.000Z

473

An initial phase of Ge hut array formation at low temperature on Si(001)  

SciTech Connect (OSTI)

We report a direct STM observation of Ge hut array nucleation on the Si(001) surface during ultrahigh vacuum molecular-beam epitaxy at 360 deg. C. Nuclei of pyramids and wedges have been observed on the wetting layer MxN patches starting from the coverage of about 5.1 A ({approx}3.6 ML). Further development of hut arrays consists of simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4x2) or p(2x2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2011-05-15T23:59:59.000Z

474

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Broader source: Energy.gov (indexed) [DOE]

SUBCONTRACT NO. QZ002 SUBCONTRACT NO. QZ002 UNDER PRIME CONTRACT NO. DE-FC07-051D14636 BETWEEN NUSTART ENERGY DEVELOPMENT ("NUSTART") AND DOE; W(A)-05- 026; CH-1292 The Petitioner, GE, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE or its subcontractors, arising from its participation under the above referenced cooperative agreement entitled "NuStart Energy Construction and Operating License Demonstration Project." The objective of the cooperative agreement is to demonstrate the combined Construction and Operating License ("COL") process under 10 CFR 52 to promote new Nuclear Power Plant ("NPP") construction in the United States. This work is funded

475

Germanium: From Its Discovery to SiGe Devices  

SciTech Connect (OSTI)

Germanium, element No.32, was discovered in 1886 by Clemens Winkler. Its first broad application was in the form of point contact Schottky diodes for radar reception during WWII. The addition of a closely spaced second contact led to the first all-solid-state electronic amplifier device, the transistor. The relatively low bandgap, the lack of a stable oxide and large surface state densities relegated germanium to the number 2 position behind silicon. The discovery of the lithium drift process, which made possible the formation of p-i-n diodes with fully depletable i-regions several centimeters thick, led germanium to new prominence as the premier gamma-ray detector. The development of ultra-pure germanium yielded highly stable detectors which have remained unsurpassed in their performance. New acceptors and donors were discovered and the electrically active role of hydrogen was clearly established several years before similar findings in silicon. Lightly doped germanium has found applications as far infrared detectors and heavily Neutron Transmutation Doped (NTD) germanium is used in thermistor devices operating at a few milliKelvin. Recently germanium has been rediscovered by the silicon device community because of its superior electron and hole mobility and its ability to induce strains when alloyed with silicon. Germanium is again a mainstream electronic material.

Haller, E.E.

2006-06-14T23:59:59.000Z

476

Neutral Pion Production in Au+Au Collisions at sqrt sNN = 200 GeV  

SciTech Connect (OSTI)

The results of mid-rapidity (0 < y < 0.8) neutral pion spectra over an extended transverse momentum range (1 < p{sub T} < 12 GeV/c) in {radical}s{sub NN} = 200 GeV Au+Au collisions, measured by the STAR experiment, are presented. The neutral pions are reconstructed from photons measured either by the STAR Barrel Electro-Magnetic Calorimeter (BEMC) or by the Time Projection Chamber (TPC) via tracking of conversion electron-positron pairs. Our measurements are compared to previously published {pi}{sup {+-}} and {pi}{sup 0} results. The nuclear modification factors R{sub CP} and R{sub AA} of {pi}{sup 0} are also presented as a function of p{sub T}. In the most central Au+Au collisions, the binary collision scaled {pi}{sup 0} yield at high p{sub T} is suppressed by a factor of about 5 compared to the expectation from the yield of p+p collisions. Such a large suppression is in agreement with previous observations for light quark mesons and is consistent with the scenario that partons suffer considerable energy loss in the dense medium formed in central nucleus-nucleus collisions at RHIC.

STAR Collaboration; Abelev, B. I.

2009-10-23T23:59:59.000Z

477

Effect of low temperature Ge seed layer and post thermal annealing on quality of Ge1? x Si x (0.05 ? x ? 0.1) graded buffer layers by UHV-CVD  

Science Journals Connector (OSTI)

High crystal quality, smooth surface and fully relaxed Ge1? x Si x (0.05 ? x...? 0.1) buffers are grown on 6°-off (100) Si sub...

Chi-Lang Nguyen; Nguyen Hong Quan; Binh-Tinh Tran…

2014-07-01T23:59:59.000Z

478

Development of Model-Based Controls for GE's Gasifier and Syngas Cooler  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Model-Based Controls Model-Based Controls for GE's Gasifier and Syngas Cooler Background The U.S. Department of Energy (DOE) National Energy Technology Laboratory (NETL) develops affordable and clean energy from coal and other fossil fuels to secure a sustainable energy economy. To further this mission, NETL funds research and development of advanced sensor and control technologies that can function under the extreme operating conditions often found in advanced power systems, particularly

479

Inclusive Reactions from ?+p at 4.1 GeV/c  

Science Journals Connector (OSTI)

At a ?+ beam momentum of 4.1 GeV/c, in reactions of the type a+b?c+X, limiting fragmentation of the beam and target particles is observed where abc¯ is exotic, and is not observed for abc¯ not exotic. Single-particle distributions in several different variables have been studied for ?- and ?+ mesons. The two-particle distributions and correlation functions from the reaction ?++p??-+?-+X are also presented.

Douglas G. Fong; Anatole M. Shapiro; Mildred Widgoff

1973-12-01T23:59:59.000Z

480

Draft 04/05/09 A new high-background-rejection dark matter Ge cryogenic  

E-Print Network [OSTI]

Draft 04/05/09 A new high-background-rejection dark matter Ge cryogenic detector The EDELWEISS of a cryogenic germanium detector for dark matter search is presented, taking advantage of the coplanar grid in the EURECA project of a one-ton cryogenic detector mass. PACS numbers: 07.57.Kp; 07.85.Nc; 72.20.Jv; 95.35.+d

Boyer, Edmond

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481

AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results  

Broader source: Energy.gov [DOE]

The Vehicle Technologies Office's Advanced Vehicle Testing Activity carries out testing on a wide range of advanced vehicles and technologies on dynamometers, closed test tracks, and on-the-road. These results provide benchmark data that researchers can use to develop technology models and guide future research and development. The following report describes results from testing done on the GE Energy Wattstation AC Level 2 charging system for plug-in electric vehicles.

482

Raman fibre lasers based on heavily GeO{sub 2}-doped fibres  

SciTech Connect (OSTI)

Amplification of radiation due to stimulated Raman scattering in an optical fibre with a heavily GeO{sub 2}-doped core and a fused silica cladding is studied. The applications of such fibres in Raman lasers are demonstrated. A Raman fibre laser emitting 10 W at a fibre length of only 3 m and Raman lasers emitting at 1.73, 1.85, 2.06, and 2.2 {mu}m are fabricated for the first time. (fibre lasers)

Dianov, Evgenii M; Bufetov, Igor' A; Mashinsky, V M; Shubin, Aleksei V; Medvedkov, O I; Rakitin, A E; Mel'kumov, Mikhail A [Fiber Optics Research Center, Russian Academy of Sciences, Moscow (Russian Federation); Khopin, V F; Gur'yanov, A N [Institute of Chemistry of High-Purity Substances, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

2005-05-31T23:59:59.000Z

483

Updated Report Acceleration of Polarized Protons to 120-150 GeV/c at Fermilab  

E-Print Network [OSTI]

The SPIN@FERMI collaboration has updated its 1991-95 Reports on the acceleration of polarized protons in Fermilab's Main Injector, which was commissioned by Fermilab. This Updated Report summarizes some updated Physics Goals for a 120-150 GeV/c polarized proton beam. It also contains an updated discussion of the Modifications and Hardware needed for a polarized beam in the Main Injector, along with an updated Schedule and Budget.

E. D. Courant; A. D. Krisch; M. A. Leonova; A. M. T. Lin; J. Liu; W. Lorenzon; D. A. Nees; R. S. Raymond; D. W. Sivers; V. K. Wong; I. Kourbanis; Ya. S. Derbenev; V. S. Morozov; D. G. Crabb; P. E. Reimer; J. R. O'Fallon; G. Fidecaro; M. Fidecaro; F. Hinterberger; S. M. Troshin; M. N. Ukhanov; A. M. Kondratenko; W. T. H. van Oers

2011-10-13T23:59:59.000Z

484

Raman spectroscopic study of the pressure-induced coordination change in GeO2 glass  

Science Journals Connector (OSTI)

Raman spectra of GeO2 glass are recorded in situ as a function of pressure to 56 GPa at room temperature. Under initial compression to 6 GPa the main 419-cm-1 Raman band shifts to higher frequency and broadens with a gradual loss of intensity. These spectral changes are consistent with an increase in distortion of GeO4 tetrahedra and a decrease in the intertetrahedral bond angle with pressure. Between 6 and 13 GPa (the pressure range of the reported fourfold- to sixfold-coordination change of Ge in germania glass) the main Raman band broadens, and the scattering intensity is dramatically reduced with little shift in peak frequency. This pressure interval is also marked with the appearance and growth of a broad low-frequency band near 240 cm-1. The inferred pressure-induced coordination change occurs without the formation of nonbridging oxygens. Above 13 GPa no further major structural changes are indicated by the Raman data taken with pressures up to 56 GPa. On decompression the back transformation of octahedral Ge to tetrahedral coordination is complete but exhibits a large hysteresis. The Raman data indicate that the high-coordinate germanium species are retained down to pressures of at least 2.3 GPa. In samples decompressed from high pressures, the intensity of the 520-cm-1 ‘‘defect’’ band is considerably enhanced relative to that in normal germania glass, consistent with an increase in three-membered-ring population. It is proposed that a large component of this increase in three-membered rings is a result of the reversion of OIII species to tetrahedra-bridging OII species under decompression.

Dan J. Durben and George H. Wolf

1991-01-15T23:59:59.000Z

485

ON THE ORIGIN OF > 10 GeV PHOTONS IN GAMMA-RAY BURST AFTERGLOWS  

SciTech Connect (OSTI)

Fermi/LAT has detected long-lasting high-energy photons (>100 MeV) from gamma-ray bursts (GRBs), with the highest energy photons reaching about 100 GeV. One proposed scenario is that they are produced by high-energy electrons accelerated in GRB forward shocks via synchrotron radiation. We study the maximum synchrotron photon energy in this scenario, considering the properties of the microturbulence magnetic fields behind the shock, as revealed by recent particle-in-cell simulations and theoretical analyses of relativistic collisionless shocks. Due to the small-scale nature of the microturbulent magnetic field, the Bohm acceleration approximation, in which the scattering mean free path is equal to the particle Larmor radius, breaks down at such high energies. This effect leads to a typical maximum synchrotron photon of a few GeV at 100 s after the burst and this maximum synchrotron photon energy decreases quickly with time. We show that the fast decrease of the maximum synchrotron photon energy leads to a fast decay of the synchrotron flux. The 10-100 GeV photons detected after the prompt phase cannot be produced by the synchrotron mechanism. They could originate from the synchrotron self-Compton emission of the early afterglow if the circumburst density is sufficiently large, or from the external inverse Compton process in the presence of central X-ray emission, such as X-ray flares and prompt high-latitude X-ray emission.

Wang Xiangyu; Liu Ruoyu [School of Astronomy and Space Science, Nanjing University, Nanjing 210093 (China); Lemoine, Martin [Institut d'Astrophysique de paris, CNRS, UPMC, 98 bis boulevard Arago, F-75014 Paris (France)

2013-07-10T23:59:59.000Z

486

Can we push the fundamental Planck scale above $10^{19}$ GeV?  

E-Print Network [OSTI]

The value of the quantum gravity scale is MPl = $10^{19}$ GeV. However, this is inherently a three-dimensional quantity. We know that we can bring this scale all the way down to TeV if we introduce extra dimensions with large volume. This will solve the hierarchy problem by destroying the desert between the electroweak and gravity scales, but will also introduce a host of new problems since some things (e.g. proton stability, neutrino masses etc) have their natural habitat in this desert. In contrast, we can also solve the hierarchy problem by reducing the number of dimensions at high energies. If the fundamental theory (which does not have to be gravity as we understand it today) is lower dimensional, then the fundamental energy scale might be much greater than 1019GeV. Then, some experimental and observational limits (e.g. on Lorentz invariance violation) which are coming close to or even exceeding the scale of 1019GeV can be evaded. In addition, scattering of particles at transplanckian energies will not p...

Stojkovic, Dejan

2014-01-01T23:59:59.000Z

487

The Energy Spectrum of the Blazar Markarian 421 Above 130 GeV  

E-Print Network [OSTI]

Markarian 421 (Mrk 421) was the first blazar detected at gamma-ray energies above 300 GeV, and it remains one of only twelve TeV blazars detected to date. TeV gamma-ray measurements of its flaring activity and spectral variability have placed constraints on models of the high-energy emission from blazars. However, observations between 50 and 300 GeV are rare, and the high-energy peak of the spectral energy distribution (SED), predicted to be in this range, has never been directly detected. We present a detection of Mrk 421 above 100 GeV as made by the Solar Tower Atmospheric Cherenkov Effect Experiment (STACEE) during a multiwavelength campaign in early 2004. STACEE is a ground-based atmospheric Cherenkov telescope using the wavefront sampling technique to detect gamma rays at lower energies than achieved by most imaging Cherenkov telescopes. We also outline a method for reconstructing gamma-ray energies using a solar heliostat telescope. This technique was applied to the 2004 data, and we present the differe...

Carson, J E; Ong, R A; Ball, J; Bramel, D A; Covault, C E; Driscoll, D; Fortin, P; Gingrich, D M; Hanna, D S; Lindner, T; Müller, C; Jarvis, A; Mukherjee, R; Ragan, K; Scalzo, R A; Williams, D A; Zweerink, J

2006-01-01T23:59:59.000Z

488

Al–Ge–Ti: Phase equilibria and structural characterization of new ternary compounds  

Science Journals Connector (OSTI)

Abstract Phase equilibria of Al–Ge–Ti have been investigated using scanning electron microscopy (SEM), powder X-ray diffraction (XRD) and differential thermal analysis (DTA). Partial isothermal sections at 400 °C, 520 °C and 1000 °C were obtained with focus on the titanium-poor part up to 50 at.% titanium. Three ternary compounds were found to exist. The compound Al3GeTi (?1) crystallizes in an own structure type (P4/nmm, tP10). Two structurally closely related compounds were found at the composition Al1?xGe1+xTi: ?2 (0.61 ? x ? 0.73), Al4Si5Zr3-type, I41/amd, tI24 and ? 2 ? (0.36 ? x ? 0.57), Si2Zr-type, Cmcm, oC12. DTA data were used to construct a ternary reaction scheme (Scheil diagram) up to approximately 1300 °C, a partial liquidus projection and two vertical sections, at 10 at.% Ti and at a constant Al:Ti ratio of 1:1. A total number of 12 ternary invariant reactions were identified.

Roland W. Bittner; Matthias Gürth; Liliana I. Duarte; Christian Leinenbach; Herta S. Effenberger; Klaus W. Richter

2014-01-01T23:59:59.000Z

489

GeV Gamma-ray Flux Upper Limits from Clusters of Galaxies  

E-Print Network [OSTI]

The detection of diffuse radio emission associated with clusters of galaxies indicates populations of relativistic leptons infusing the intracluster medium. Those electrons and positrons are either injected into and accelerated directly in the intracluster medium, or produced as secondary pairs by cosmic-ray ions scattering on ambient protons. Radiation mechanisms involving the energetic leptons togeth