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Sample records for ge lighting ge

  1. TEE-0077- In the Matter of GE Appliances & Lighting

    Broader source: Energy.gov [DOE]

    The Decision and Order considers and Application for Exception filed by GE Appliances & Lighting (GE)

  2. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Appliances & Lighting We're developing cutting-edge appliances and innovative lighting to make life easier, reduce costs and increase energy efficiency. Home > Innovation > Appliances & Lighting Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership

  3. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  4. TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy

    Energy Savers [EERE]

    4 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the

  5. Smart Street Lights | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    LightGrid Provides Real-Time Feedback From Street Lights Click to email this to a friend ... LightGrid Provides Real-Time Feedback From Street Lights You use a GPS to provide ...

  6. EXC-12-0001, EXC-12-0002, EXC-12-0003- In the Matter of Philips Lighting Company, GE Lighting, and OSRAM SYLVANIA, Inc.

    Office of Energy Efficiency and Renewable Energy (EERE)

    On April 16, 2012, OHA issued a decision granting Applications for Exception filed respectively by Philips Lighting Company (Philips), GE Lighting (GE) and OSRAM SYLVANIA, Inc. (OSI) (collectively,...

  7. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Formation Du... grid 2014.12.09 GE, Utility, Government, and Academia Partner on Microgrid Project Purdue-GE Adv Mfg Screen Dress jpg 2014.12.04 Purdue, GE to collaborate on ...

  8. Project planning workshop 6-GeV synchrotron light source: Volume 2

    SciTech Connect (OSTI)

    Not Available

    1986-01-01

    A series of work sheets, graphs, and printouts are given which detail the work breakdown structure, cost, and manpower requirements for the 6 GeV Synchrotron Light Source. (LEW)

  9. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    About GE Global Research > Leadership Leadership GE Global Research Centers rely on the guidance of visionary leaders with deep technical knowledge on the ground at each of our sites. A photo of Vic Abate Vic Abate Chief Technology Officer GE Global Research As senior vice president and chief technology officer for GE, Vic is responsible for one of the world's largest and most diversified industrial research and technology organizations. Vic leads GE's 50,000 engineers and scientists and G...

  10. Photonics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > The Photonics Lab at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Photonics Lab at GE Global Research Loucas Tsakalakos, the Photonics lab manager at GE Global Research, introduces photonics and shares the lab's work on innovative ways to use light. You Might Also Like

  11. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new capabilities in 3D Printing and higher jet engine efficiency More GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost More GE's US1 billion investment in ...

  12. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  13. GE Global Research Careers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers The best and brightest minds in science and technology make breakthroughs daily at GE Global Research. Are you ready to join our team? Job Search Location Location Bangalore, India Dhahran, Saudi Arabia Munich, Germany Niskayuna, USA Oklahoma City, USA Rio de Janeiro, Brazil Shanghai, China Tirat Carmel, Israel Keyword Search Jobs » View All Jobs Keep in Touch With GE Global Research Careers Home > Careers Why GE careers_why_GE GE works on things that matter. The best people and the

  14. Light Stops, Light Staus and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Carena, Marcela; Gori, Stefania; Shah, Nausheen R.; Wagner, Carlos E.M.; Wang, Lian-Tao

    2013-08-01

    The ATLAS and CMS experiments have recently announced the discovery of a Higgs-like resonance with mass close to 125 GeV. Overall, the data is consistent with a Standard Model (SM)-like Higgs boson. Such a particle may arise in the minimal supersymmetric extension of the SM with average stop masses of the order of the TeV scale and a sizable stop mixing parameter. In this article we discuss properties of the SM-like Higgs production and decay rates induced by the possible presence of light staus and light stops. Light staus can affect the decay rate of the Higgs into di-photons and, in the case of sizable left-right mixing, induce an enhancement in this production channel up to $\\sim$ 50% of the Standard Model rate. Light stops may induce sizable modifications of the Higgs gluon fusion production rate and correlated modifications to the Higgs diphoton decay. Departures from SM values of the bottom-quark and tau-lepton couplings to the Higgs can be obtained due to Higgs mixing effects triggered by light third generation scalar superpartners. We describe the phenomenological implications of light staus on searches for light stops and non-standard Higgs bosons. Finally, we discuss the current status of the search for light staus produced in association with sneutrinos, in final states containing a $W$ gauge boson and a pair of $\\tau$s.

  15. GE Capital Partnership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research and GE Capital: Middle Market Collaboration Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies collaborating with Global Research

  16. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Locations GE Global Research is innovating around the clock. Select one of our locations to learn more about operations there.GE Global Research is innovating around the clock. Select a location to learn more about our operations. Home > Locations GE Global Research is ALWAYS OPEN Already know about our locations? Experience a special look at a day in our life around the world! See What We're Doing Dhahran, Saudi Arabia Founded: 2015 Employees: 15 Focus Areas: Material Characterization,

  17. Kinetics of visible light photo-oxidation of Ge nanocrystals:Theory and in situ measurement

    SciTech Connect (OSTI)

    Sharp, I.D.; Xu, Q.; Yuan, C.W.; Beeman, J.W.; Ager III, J.W.; Chrzan, D.C.; Haller, E.E.

    2006-11-14

    Photo-oxidation of Ge nanocrystals illuminated with visible laser light under ambient conditions was investigated. The photo-oxidation kinetics were monitored by in situ measurement of the crystalline Ge volume fraction by Raman spectroscopy. The effects of laser power and energy on the extent of oxidation were measured using both in situ and ex situ Raman scattering techniques. A mechanistic model in which the tunneling of photo-excited carriers to the oxide surface for electron activated molecular oxygen dissociation is proposed. This quantitative model successfully describes all experimental photo-oxidation observations using physical parameters.

  18. GE Researchers Tackle Three Unimpossible Missions | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to ... Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers ...

  19. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Researcher: Putting GE Beliefs into Action Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researcher: Putting GE Beliefs into Action Joseph Vinciquerra 2015.01.30 Several weeks ago I had the privilege of attending the 2015 Global Leadership Meeting held near Lake George, New York. As a first time attendee, I

  20. GE Global Research Contact | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Contact Us Looking for more details? Please contact one of these individuals or visit the Newsroom for the latest information. Home > About GE Global Research > Contact Us GE Global Research 1 Research Circle, Niskayuna, NY 12309, USA Todd Alhart +1.518.387.7914 todd.alhart@ge.com Communications and Public Relations GE Brazil Technology Center Rua Trinta e Seis (Praia dos Coqueiros), s/n, Supl. Ilha do Bom Jesus 840 Ilha do Fundão - Cidade Universitária Rio de Janeiro, RJ - CEP 21941-593

  1. GE and Quirky | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to inspire new...

  2. Moving | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Moving We're always working on planes, trains and automobiles-and specialized ways to move people and products efficiently and sustainably. Home > Impact > Moving Rail Networks Are Getting Smarter Sources: 2012 GE Annual Report (page 12); Norfolk Southern 2010 sustainability reporter (page 17) North American Freight Railroad... Read More » The GE Store for Technology is Open for Business Welcome to GE Global Research, also known as the GE Store for Technology. Across our global network of

  3. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Global Research and GE Capital: Middle Market Collaboration In 2013, a partnering initiative between Global Research and GE Capital resulted in dozens of middle market companies... Read More » How Green Is Green? GE's Global Research Center's Ecoassessment Center of Excellence was created to study the impact of GE products and

  4. Connecting | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Connecting Through software, the Industrial Internet and the sharing of ideas, we're bringing people together all around the world. Home > Impact > Connecting GE Software's Design and User Experience Studio Looking to the future, GE created the Design and Experience Studio dedicated to developing clean, delightful, understandable, and... Read More » Predix(tm): GE's Software Platform for the Industrial Internet A cornerstone of the GE Software Center efforts to advance the Industrial

  5. Curing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a... Read More » GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of GE

  6. GE Lighting Solutions: Noncompliance Determination (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards.

  7. GE Lighting Solutions: Proposed Penalty (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S.

  8. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light,... Read More » Bringing a Digital Mindset to Manufacturing The digital age will provide manufacturing insights that will save money and transform how we work across

  9. Powering | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE have pioneered a technical breakthrough called DCJ... Read More Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in ...

  10. Predix | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Predix(tm): GE's Software Platform for the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Predix(tm): GE's Software Platform for the Industrial Internet A cornerstone of the GE Software Center efforts to advance the Industrial Internet is Predix(tm), GE's software platform for the Industrial

  11. GE Get Fit | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Get Fit Program Attracts Adventurers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Get Fit Program Attracts Adventurers Jim Bray 2012.10.02 In the past few weeks, we've shared #GetFit stories from our Global Research sites in Niskayuna, San Ramon and Shanghai. GE Healthcare's #getfit campaign is a social media

  12. What is the GE store |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    materials, software, and analytics to commercialization, process, and business model best practices. The GE Store allows GE to leapfrog industries, to drive innovation,...

  13. Direct detection of lightGe-phobic” exothermic dark matter

    SciTech Connect (OSTI)

    Gelmini, Graciela B.; Georgescu, Andreea; Huh, Ji-Haeng

    2014-07-15

    We present comparisons of direct dark matter (DM) detection data for light WIMPs with exothermic scattering with nuclei (exoDM), both assuming the Standard Halo Model (SHM) and in a halo model — independent manner. Exothermic interactions favor light targets, thus reducing the importance of upper limits derived from xenon targets, the most restrictive of which is at present the LUX limit. In our SHM analysis the CDMS-II-Si and CoGeNT regions become allowed by these bounds, however the recent SuperCDMS limit rejects both regions for exoDM with isospin-conserving couplings. An isospin-violating coupling of the exoDM, in particular one with a neutron to proton coupling ratio of −0.8 (which we call “Ge-phobic”), maximally reduces the DM coupling to germanium and allows the CDMS-II-Si region to become compatible with all bounds. This is also clearly shown in our halo-independent analysis.

  14. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Laura Bauer

  15. GE Global Research News | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Newsroom Our technologies transform GE's businesses and the world. Learn about them, meet our experts and read news coverage about our work. Home > Newsroom Meet Our Experts Our scientists are global leaders in their fields. They welcome media inquiries. Find an Expert » Media Contacts A photograph of Natalia Albuquerque Rio de Janeiro Natalia Albuquerque +55 21 3548-6193 A photograph of Todd Alhart Niskayuna, Oklahoma City, Munich Todd Alhart +1.518.387.7914 A photograph of Laura Bauer

  16. SU-E-I-22: A Comprehensive Investigation of Noise Variations Between the GE Discovery CT750 HD and GE LightSpeed VCT

    SciTech Connect (OSTI)

    Bache, S; Loyer, E; Stauduhar, P; Liu, X; Rong, J

    2015-06-15

    Purpose: To quantify and compare the noise properties between two GE CT models-the Discovery CT750 HD (aka HD750) and LightSpeed VCT, with the overall goal of assessing the impact in clinical diagnostic practice. Methods: Daily QC data from a fleet of 9 CT scanners currently in clinical use were investigated – 5 HD750 and 4 VCT (over 600 total acquisitions for each scanner). A standard GE QC phantom was scanned daily using two sets of scan parameters with each scanner over 1 year. Water CT number and standard deviation were recorded from the image of water section of the QC phantom. The standard GE QC scan parameters (Pitch = 0.516, 120kVp, 0.4s, 335mA, Small Body SFOV, 5mm thickness) and an in-house developed protocol (Axial, 120kVp, 1.0s, 240mA, Head SFOV, 5mm thickness) were used, with Standard reconstruction algorithm. Noise was measured as the standard deviation in the center of the water phantom image. Inter-model noise distributions and tube output in mR/mAs were compared to assess any relative differences in noise properties. Results: With the in-house protocols, average noise for the five HD750 scanners was ∼9% higher than the VCT scanners (5.8 vs 5.3). For the GE QC protocol, average noise with the HD750 scanners was ∼11% higher than with the VCT scanners (4.8 vs 4.3). This discrepancy in noise between the two models was found despite the tube output in mR/mAs being comparable with the HD750 scanners only having ∼4% lower output (8.0 vs 8.3 mR/mAs). Conclusion: Using identical scan protocols, average noise in images from the HD750 group was higher than that from the VCT group. This confirms feedback from an institutional radiologist’s feedback regarding grainier patient images from HD750 scanners. Further investigation is warranted to assess the noise texture and distribution, as well as clinical impact.

  17. GE Hitachi Nuclear Energy | Open Energy Information

    Open Energy Info (EERE)

    GE Hitachi Nuclear Energy Jump to: navigation, search Name: GE Hitachi Nuclear Energy Place: Wilmington, North Carolina Zip: 28402 Sector: Efficiency, Services Product: GE Hitachi...

  18. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  19. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  20. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), ...

  1. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email ... GE continues leading role in photonics industry - from LED to digital x-ray Danielle ...

  2. Working at GE Global Research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists, inspiration can come from a rock or a sunset or a supercomputer. But mostly it comes from our dream of what the future can be. A world that's cleaner, greener, more efficient, more intelligent and more connected, where people have greater access to essentials like energy, water and healthcare. A better world. Innovate GE Global

  3. GE | OpenEI Community

    Open Energy Info (EERE)

    by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

  4. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology Alliance, which will develop and commercialize valuable technologies to solve critical needs for the oil and gas industry. The Alliance builds upon a current collaboration on flow analysis technology for oil and gas wells. It will leverage research and development from GE's newest Global Research Center,

  5. Curing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Curing We're pioneering medical developments, from robotic healthcare assistants to diagnostic tools and specialized, globally deployed gear. Home > Impact > Curing Invention Factory: How Will We Live Forever? In this episode of Invention Factory - a partnership between GE and Vice - we probe the cutting edge of medical... Read More » Invention Factory: How Will Mind Overcome Matter? In this episode of Invention Factory - a partnership between General Electric and Vice - we explore how

  6. Invention | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Invention Our people drive every scientific advance we make, every day. Find out who they are and what they're thinking right now. Home > Invention Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Meet our people » Stump the Scientist Ask us your question about science or technology. Then check back often to see what our scientists say! Leave them speechless » Edison's Desk Blog Curious about researchers'

  7. Building | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building We're creating infrastructure, refining materials and assembling technologies that accommodate our constantly changing world. Home > Impact > Building A Quirky Idea: Turning Patents Into Consumer Products In April 2013, GE and Quirky announced a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the... Read More » Advanced Laser Manufacturing Tools Deliver Higher Performance In a research lab looking far, far into the future, a team of scientists

  8. GE's Digital Marketplace to Revolutionize Manufacturing | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE's Digital Marketplace to Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Digital Marketplace to Revolutionize Manufacturing GE will lead an effort to create an online community for manufacturing collaboration and data analysis The open source project will build the

  9. Light nuclides produced in the proton-induced spallation of {sup 238}U at 1 GeV

    SciTech Connect (OSTI)

    Ricciardi, M.V.; Armbruster, P.; Enqvist, T.; Kelic, A.; Rejmund, F.; Schmidt, K.-H.; Yordanov, O.; Benlliure, J.; Pereira, J.; Bernas, M.; Mustapha, B.; Stephan, C.; Tassan-Got, L.

    2006-01-15

    The production of light and intermediate-mass nuclides formed in the reaction {sup 1}H+{sup 238}U at 1 GeV was measured at the Fragment Separator at GSI, Darmstadt. The experiment was performed in inverse kinematics, by shooting a 1 A GeV {sup 238}U beam on a thin liquid-hydrogen target. A total of 254 isotopes of all elements in the range 7{<=}Z{<=}37 were unambiguously identified, and the velocity distributions of the produced nuclides were determined with high precision. The results show that the nuclides are produced in a very asymmetric binary decay of heavy nuclei originating from the spallation of uranium. All the features of the produced nuclides merge with the characteristics of the fission products as their mass increases.

  10. GE MEMS for LTE Advanced Mobile Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE MEMS Switch Technology Demonstrates Performance Which Could Meet Demands for ... longer battery life, and the advanced RF designs required of LTE-Advanced devices. ...

  11. Purdue, GE Collaborate On Advanced Manufacturing | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... In addition to DMDI, Purdue is involved in providing skills and training support for the new jet engine assembly facility GE Aviation is building in neighboring Lafayette, Indiana. ...

  12. Israel: A Source of Innovation for GE |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Israel: A Source of Innovation for GE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Israel: A Source of Innovation for GE Oded Meirav 2014.05.22 Unlike other research organizations within GE Global Research, my team is not tasked with developing technology for GE's businesses. Instead...we hunt! Our job is to identify

  13. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation...

  14. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Predictivity(tm) Industrial Internet Solutions As a key player in GE's commitment to advance the Industrial Internet, the GE Software Center is at work helping industrial organizations use data, analytics, data

  15. Flying Cars | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  16. Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S., India, China, Germany, Brazil and Israel, we have more than 300 collaborations ... View the Popular Science article to learn more. GE's Israel Technology Center: Advancing ...

  17. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... For example, GE flow meter products will be developed incorporating the Swept Frequency Acoustic Interferometry (SFAI) metering technology incubated in an alliance between Chevron ...

  18. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. ... materials would further improve the competitiveness of magnetic refrigeration technology. ...

  19. Recovery Act Helps GE in-source Manufacturing | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances

  20. Light harvesting with Ge quantum dots embedded in SiO{sub 2} or Si{sub 3}N{sub 4}

    SciTech Connect (OSTI)

    Cosentino, Salvatore Raciti, Rosario; Simone, Francesca; Crupi, Isodiana; Terrasi, Antonio; Mirabella, Salvo; Sungur Ozen, Emel; Aydinli, Atilla; Mio, Antonio M.; Nicotra, Giuseppe; Turan, Rasit

    2014-01-28

    Germanium quantum dots (QDs) embedded in SiO{sub 2} or in Si{sub 3}N{sub 4} have been studied for light harvesting purposes. SiGeO or SiGeN thin films, produced by plasma enhanced chemical vapor deposition, have been annealed up to 850?C to induce Ge QD precipitation in Si based matrices. By varying the Ge content, the QD diameter can be tuned in the 39?nm range in the SiO{sub 2} matrix, or in the 12?nm range in the Si{sub 3}N{sub 4} matrix, as measured by transmission electron microscopy. Thus, Si{sub 3}N{sub 4} matrix hosts Ge QDs at higher density and more closely spaced than SiO{sub 2} matrix. Raman spectroscopy revealed a higher threshold for amorphous-to-crystalline transition for Ge QDs embedded in Si{sub 3}N{sub 4} matrix in comparison with those in the SiO{sub 2} host. Light absorption by Ge QDs is shown to be more effective in Si{sub 3}N{sub 4} matrix, due to the optical bandgap (0.91.6?eV) being lower than in SiO{sub 2} matrix (1.22.2?eV). Significant photoresponse with a large measured internal quantum efficiency has been observed for Ge QDs in Si{sub 3}N{sub 4} matrix when they are used as a sensitive layer in a photodetector device. These data will be presented and discussed, opening new routes for application of Ge QDs in light harvesting devices.

  1. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Utility, Government, and Academia Partner on Microgrid Project Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Utility, Government, and Academia Partner on Microgrid Project GE Awarded a $1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events NISKAYUNA,

  2. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The GE BBQ Center is open, innovating and serving some delicious BBQ Lynn DeRose 2015.03.15 This is the third in a five-part series of dispatches from GE's Science of Barbecue Experience at South by

  3. A family of GE engineers | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A family of GE engineers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A family of GE engineers Father's Day is a time dedicated to celebrating family ties. In the GE family, there are many types of relationships and connections, including some that originated in the same household. Meet Monte and children, Ashlee and

  4. GE Innovation and Manufacturing in Europe | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovation and Manufacturing in Europe Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Innovation and Manufacturing in Europe Click the image below to see how GE is at work across Europe to change the face of manufacturing. EU graphic You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN »

  5. GE Researchers Tackle Three Unimpossible Missions | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Unimpossible Missions: GE researchers prove nothing is impossible Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Unimpossible Missions: GE researchers prove nothing is impossible A team of GE researchers came together over the course of several months to tackle three seemingly impossible missions.

  6. Ars Technica Visits GE's China Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technica visits GE's China Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ars Technica visits GE's China Technology Center Ars Technica visited GE's China Technology Center in Shanghai to discover what type of research is being conducted at the facility. The visit was a part of Ars Technica's Chasing

  7. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In ...

  8. GE Solar Power | Open Energy Information

    Open Energy Info (EERE)

    GE Solar Power Jump to: navigation, search Name: GE Solar Power Place: Delaware Sector: Solar Product: String representation "The solar busin ... s in July 2004." is too long....

  9. Miniaturized Turbine Offers Desalination Solution | GE Global...

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    integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and ... GE is a world leader in the development and application of steam turbine technology, with ...

  10. GE Wind Energy Germany | Open Energy Information

    Open Energy Info (EERE)

    Energy Germany Jump to: navigation, search Name: GE Wind Energy Germany Place: Salzbergen, Germany Zip: 48499 Sector: Wind energy Product: Germany-based, division of GE Wind Energy...

  11. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE...

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    Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this ... GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ...

  12. GE Scientists Experiment With Texas BBQ | GE Global Research

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    GE BBQ Center is open, innovating and serving some delicious BBQ Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens ...

  13. Heat Transfer in GE Jet Engines | GE Global Research

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    Heat Transfer in GE Jet Engines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on ...

  14. GE Develops High Water Recovery Technology in China | GE Global...

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    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in ... GE Develops High Water Recovery Technology in China Technology aims to boost development ...

  15. GE Researcher Explores Science Behind Movie Chappie | GE Global...

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    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  16. Laser Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Laser Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Laser Manufacturing at GE Global Research Learn how laser sintering, an additive laser manufacturing process practiced at GE Global Research, makes parts from metal powder. You Might Also Like Munich_interior_V 10 Years ON: From

  17. Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes on silicon for mid-infrared photonic applications

    SciTech Connect (OSTI)

    Gallagher, J. D.; Xu, C.; Menéndez, J.; Senaratne, C. L.; Wallace, P. M.; Kouvetakis, J.; Aoki, T.

    2015-10-07

    This paper reports initial the demonstration of prototype Ge{sub 1−x−y}Si{sub x}Sn{sub y} light emitting diodes with distinct direct and indirect edges and high quality I-V characteristics. The devices are fabricated on Si (100) wafers in heterostructure pin geometry [n-Ge/i-Ge{sub 1−x−y}Si{sub x}Sn{sub y}/p-Ge(Sn/Si)] using ultra low-temperature (T < 300 °C) depositions of the highly reactive chemical sources Si{sub 4}H{sub 10}, Ge{sub 4}H{sub 10}, Ge{sub 3}H{sub 8}, and SnD{sub 4}. The Sn content in the i-Ge{sub 1−x−y}Si{sub x}Sn{sub y} layer was varied from ∼3.5% to 11%, while the Si content was kept constant near 3%. The Si/Sn amounts in the p-layer were selected to mitigate the lattice mismatch so that the top interface grows defect-free, thereby reducing the deleterious effects of mismatch-induced dislocations on the optical/electrical properties. The spectral responsivity plots of the devices reveal sharp and well-defined absorption edges that systematically red-shift in the mid-IR from 1750 to 2100 nm with increasing Sn content from 3.5% to 11%. The electroluminescence spectra reveal strong direct-gap emission peaks and weak lower energy shoulders attributed to indirect gaps. Both peaks in a given spectrum red-shift with increasing Sn content and their separation decreases as the material approaches direct gap conditions in analogy with binary Ge{sub 1−y}Sn{sub y} counterparts. These findings-combined with the enhanced thermal stability of Ge{sub 1−x−y}Si{sub x}Sn{sub y} relative to Ge{sub 1−y}Sn{sub y} and the observation that ternary alloy disorder does not adversely affect the emission properties—indicate that Ge{sub 1−x−y}Si{sub x}Sn{sub y} may represent a practical target system for future generations of group-IV light sources on Si.

  18. A tale of tails. Dark matter interpretations of the Fermi GeV excess in light of background model systematics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Calore, Francesca; Cholis, Ilias; McCabe, Christopher; Weniger, Christoph

    2015-03-10

    Several groups have identified an extended excess of gamma rays over the modeled foreground and background emissions towards the Galactic center (GC) based on observations with the Fermi Large Area Telescope. This excess emission is compatible in morphology and spectrum with a telltale sign from dark matter (DM) annihilation. Here, we present a critical reassessment of DM interpretations of the GC signal in light of the foreground and background uncertainties that some of us recently outlaid in Calore et al. (2014). We find that a much larger number of DM models fits the gamma-ray data than previously noted. In particular:more(1) In the case of DM annihilation into bb, we find that even large DM masses up to m??74 GeV are allowed at p-value >0.05. (2) Surprisingly, annihilation into nonrelativistic hh gives a good fit to the data. (3) The inverse Compton emission from ?+? with m? ~ 6070 GeV can also account for the excess at higher latitudes, |b|>2, both in its spectrum and morphology. We also present novel constraints on a large number of mixed annihilation channels, including cascade annihilation involving hidden sector mediators. In conclusion, we show that the current limits from dwarf spheroidal observations are not in tension with a DM interpretation when uncertainties on the DM halo profile are accounted for.less

  19. A Tale of Tails. Dark Matter Interpretations of the Fermi GeV Excess in Light of Background Model Systematics

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Calore, Francesca; Cholis, Ilias; McCabe, Christopher; Weniger, Christoph

    2015-03-10

    Several groups have identified an extended excess of gamma rays over the modeled foreground and background emissions towards the Galactic center (GC) based on observations with the Fermi Large Area Telescope. The excess emission is compatible in morphology and spectrum with a telltale sign from dark matter (DM) annihilation. Here, we present a critical reassessment of DM interpretations of the GC signal in light of the foreground and background uncertainties that some of us recently outlaid in Calore et al. (2014). We also find that a much larger number of DM models fits the gamma-ray data than previously noted. Inmore » particular: (1) In the case of DM annihilation into b¯b, we find that even large DM masses up to mχ≃74 GeV are allowed at p-value >0.05. (2) Surprisingly, annihilation into nonrelativistic hh gives a good fit to the data. (3) The inverse Compton emission from μ+μ- with mχ~60–70 GeV can also account for the excess at higher latitudes, |b|>2°, both in its spectrum and morphology. We also present novel constraints on a large number of mixed annihilation channels, including cascade annihilation involving hidden sector mediators. Finally, we show that the current limits from dwarf spheroidal observations are not in tension with a DM interpretation when uncertainties on the DM halo profile are accounted for.« less

  20. A Tale of Tails. Dark Matter Interpretations of the Fermi GeV Excess in Light of Background Model Systematics

    SciTech Connect (OSTI)

    Calore, Francesca; Cholis, Ilias; McCabe, Christopher; Weniger, Christoph

    2015-03-10

    Several groups have identified an extended excess of gamma rays over the modeled foreground and background emissions towards the Galactic center (GC) based on observations with the Fermi Large Area Telescope. The excess emission is compatible in morphology and spectrum with a telltale sign from dark matter (DM) annihilation. Here, we present a critical reassessment of DM interpretations of the GC signal in light of the foreground and background uncertainties that some of us recently outlaid in Calore et al. (2014). We also find that a much larger number of DM models fits the gamma-ray data than previously noted. In particular: (1) In the case of DM annihilation into bb, we find that even large DM masses up to m??74 GeV are allowed at p-value >0.05. (2) Surprisingly, annihilation into nonrelativistic hh gives a good fit to the data. (3) The inverse Compton emission from ?+?- with m?~6070 GeV can also account for the excess at higher latitudes, |b|>2, both in its spectrum and morphology. We also present novel constraints on a large number of mixed annihilation channels, including cascade annihilation involving hidden sector mediators. Finally, we show that the current limits from dwarf spheroidal observations are not in tension with a DM interpretation when uncertainties on the DM halo profile are accounted for.

  1. A Tale of Tails. Dark Matter Interpretations of the Fermi GeV Excess in Light of Background Model Systematics

    SciTech Connect (OSTI)

    Calore, Francesca; Cholis, Ilias; McCabe, Christopher; Weniger, Christoph

    2015-03-10

    Several groups have identified an extended excess of gamma rays over the modeled foreground and background emissions towards the Galactic center (GC) based on observations with the Fermi Large Area Telescope. The excess emission is compatible in morphology and spectrum with a telltale sign from dark matter (DM) annihilation. Here, we present a critical reassessment of DM interpretations of the GC signal in light of the foreground and background uncertainties that some of us recently outlaid in Calore et al. (2014). We also find that a much larger number of DM models fits the gamma-ray data than previously noted. In particular: (1) In the case of DM annihilation into b¯b, we find that even large DM masses up to mχ≃74 GeV are allowed at p-value >0.05. (2) Surprisingly, annihilation into nonrelativistic hh gives a good fit to the data. (3) The inverse Compton emission from μ+μ- with mχ~60–70 GeV can also account for the excess at higher latitudes, |b|>2°, both in its spectrum and morphology. We also present novel constraints on a large number of mixed annihilation channels, including cascade annihilation involving hidden sector mediators. Finally, we show that the current limits from dwarf spheroidal observations are not in tension with a DM interpretation when uncertainties on the DM halo profile are accounted for.

  2. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) ...

  3. Technical Education | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technical Education at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click...

  4. Airline Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    reduce their operating costs and environmental footprint. You Might Also Like IMG0475 Innovation 247: We're Always Open direct write2square The GE Store for Technology is...

  5. Aviation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Read More Innovation 247: We're Always Open At GE Global Research, we work around the clock and across the globe to build, power, move and cure the world. Click the image... ...

  6. Hybrid Locomotive | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Over the last decade, the U.S. government has enacted a number of rules designed to reduce smog and air pollution in cities and towns. For locomotive makers, like GE, that means ...

  7. Epi-cleaning of Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Di Gaspare, L.; Sabbagh, D.; De Seta, M.; Sodo, A.; Wirths, S.; Buca, D.; Zaumseil, P.; Schroeder, T.; Capellini, G.

    2015-01-28

    We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1%) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100–300 °C range.

  8. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SAN RAMON, CA-June, 18 2015 - GE Software (NYSE: GE) announced today it will partner with ... The GE Software curriculum includes workshops on design thinking and user experience, ...

  9. GE Key Partner in Innovation Institutes | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Is Key Partner in Manufacturing Innovation Institutes Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Is Key Partner in Manufacturing Innovation Institutes GE Global Research 2014.02.25 President Obama today announced two new manufacturing innovation institutes. One is focused on digital manufacturing and design

  10. GE Opens Research Center in Saudi Arabia | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in localization, technology innovation and manufacturing to drive country's digital transformation by 2020 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's US$1 billion investment in Saudi Arabia creates a path for new initiatives in

  11. GE Researcher Explores Science Behind Movie Chappie | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic The film "Chappie" is the story of a Police droid, reprogrammed to become

  12. GE leads the way in photonics research | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE continues leading role in photonics industry - from LED to digital x-ray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE continues leading role in photonics industry - from LED to digital x-ray Danielle Merfeld, Ph.D. 2015.07.27 Vice President Joseph Biden joined New York Gov. Andrew Cuomo in Rochester, New York

  13. 12 GeV! | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV! 12 GeV! December 21, 2015 Our upgrade project is called the 12 GeV CEBAF Upgrade Project. At the time CD-4A was achieved, we demonstrated 2.2 GeV per pass. This was 12 GeV! Well, not quite. In fact with more than one pass, we limited ourselves to a little more than 6 GeV with three passes, and to 10.5 GeV with 5.5 passes. It was not felt to be prudent to demand 12 GeV out of the machine immediately after turn on. Operations in the spring of 2015 at high energy, ~10.5 GeV, came to a

  14. Sodium Battery | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sodium Battery Technology Improves Performance and Safety Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Sodium Battery Technology Improves Performance and Safety Imagination and innovation have always been in GE's DNA. While exploring the expanded use of hybrid power in the rail, mining and marine industries, GE began

  15. Milford Wind Corridor Phase I (GE Energy) | Open Energy Information

    Open Energy Info (EERE)

    I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type...

  16. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale...

  17. What Is MEMS? | GE Global Research

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    Materials, Surfaces and Interfaces 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN ...

  18. Waste to Energy Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-7-v GE Scientists Unveil Greener, Smarter Sleigh for Santa Claus 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN lightning bolt We One-Upped Ben ...

  19. GE Wind Energy | Open Energy Information

    Open Energy Info (EERE)

    Energy Jump to: navigation, search Name: GE Wind Energy Place: Atlanta, Georgia Zip: GA 30339 Sector: Wind energy Product: GE's wind energy division, formed as a result of the...

  20. GE Shenhua JV | Open Energy Information

    Open Energy Info (EERE)

    Name: GE & Shenhua JV Place: China Product: China based industrial coal gasification joint venture. References: GE & Shenhua JV1 This article is a stub. You can help OpenEI...

  1. Disclosures, Disclaimers and Policies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Disclosures, Disclaimers and Policies Home > Disclosures, Disclaimers and Policies Financial Disclosures GE Global Research financial disclosures and conflicts related to PHS-funded research Equal Employment Opportunity Plans Persons wishing to review GE Global Reasearch's EEOP should contact the GEGR Recruiting Manager: Megan Magee, GRC Recruiting Leader, 518-387-6703, magee@ge.com. From GE Global Research https://twitter.com/GEResearch

  2. GE Scientist Stephan Biller Discusses the Industrial Internet | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Manufacturing Scientist Stephan Biller Discusses the Industrial Internet Stephan Biller, Chief Manufacturing Scientist at GE Global Research, talked with the Farstuff Podcast about the

  3. GE PowerPoint Template

    U.S. Energy Information Administration (EIA) Indexed Site

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  4. SPEIR: A Ge Compton Camera

    SciTech Connect (OSTI)

    Mihailescu, L; Vetter, K M; Burks, M T; Hull, E L; Craig, W W

    2004-02-11

    The SPEctroscopic Imager for {gamma}-Rays (SPEIR) is a new concept of a compact {gamma}-ray imaging system of high efficiency and spectroscopic resolution with a 4-{pi} field-of-view. The system behind this concept employs double-sided segmented planar Ge detectors accompanied by the use of list-mode photon reconstruction methods to create a sensitive, compact Compton scatter camera.

  5. GE's BBQ Science Experiments Produce Results |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ Science Experiments Reveal Winning Rack of Ribs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ Science Experiments Reveal Winning Rack of Ribs Lynn DeRose 2015.03.16 This is the fourth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art

  6. MEMS Relays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Next Revolution in MEMS Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Next Revolution in MEMS Microelectromechanical systems (MEMS) engineers share what GE Global Research is doing to revolutionize MEMS technology. You Might Also Like 2-1-8-v-mems-applications Engineer Chris Keimel Introduces MEMS Technology

  7. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and create next." Abate will become only the 10th leader in GE Global Research's 115-year history. As Chief Technology Officer, Abate will oversee GE's nine global research center...

  8. GE Global Research in Shanghai, China

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    Shanghai, China Shanghai, China GE's commercial and industrial history meets challenges posed by China's rapid growth to produce work reflecting the advancing world. Click to email ...

  9. User Experience Testing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    understandable, and actionable software experiences for GE customers, partners ... The fact that this work takes place within the Software CoE means that designers and ...

  10. Cool and Quiet DCJ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The technology was originally developed for commercial jet engines but has been adapted ... to the Real World in 10 Years primusenginefeaturedimage3 GE Innovation and ...

  11. Big Data Analysis | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Software We're blending data, analytics and computing know-how into algorithms and programs that drive business and technology forward. Home > Innovation > Software GE Software's ...

  12. Stump the Scientist | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    > Stump the Scientist Behind the Scenes with Chief Scientist Jim Bray Watch the Video Happy Pi Day from GE Global Research Watch the Video Ready to Stump the...

  13. Blue Arc Machining | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Small Device, Broad Impact in Power Electronics IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  14. Intelligent Rail Networks | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe ...

  15. Industrial Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Exhibition Focuses on Materials, Surfaces and Interfaces IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  16. Internal Combustion Efficiency | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research: Holiday Shopping & Electric Vehicles IMG0475 Innovation 247: We're Always Open primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe...

  17. New Medical Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    boundaries. Home > Innovation > Healthcare GE Unveils High-Tech Superhero, GENIUS MAN Created on earth to inspire the next generation of scientists and engineers, a team of...

  18. Underground CO2 Storage | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    William Challener, principal investigator and physicist in the Photonics Lab at GE Global Research. "The work is very challenging. We have already developed a single sensor system ...

  19. GE Global Research in Tirat Carmel, Israel

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Tirat Carmel, Israel Tirat Carmel, Israel The Israel Technology Center creates partnerships between Israeli external innovators and GE to bring innovative technologies to the ...

  20. Ultrasound Open Innovation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to help accelerate the development of new applications to improve the quality of care. Michael Idelchik, vice president of Advanced Technology Programs at GE Global...

  1. 3D Printed Toy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DirectWriteV Building More Intelligent GE Products with Additive Manufacturing DirectWriteV Innovating Around the Clock to Change the Paradigm of Manufacturing ...

  2. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global Research, the technology development arm for the General Electric Company (NYSE: GE), to better

  3. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, MIT Build Crowdsourcing Software Platform Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, MIT Build Crowdsourcing Software Platform GE (NYSE: GE), with the Massachusetts Institute of Technology (MIT) and the Defense Advanced Research Agency (DARPA), is embarking on a program "vehicleforge.mil" to

  4. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  5. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  6. Cedar Creek Wind Farm II (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service...

  7. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  8. Top of the World (GE) | Open Energy Information

    Open Energy Info (EERE)

    GE) Jump to: navigation, search Name Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner...

  9. Structural evolution of Ge-rich Si{sub 1-x}Ge{sub x} films deposited...

    Office of Scientific and Technical Information (OSTI)

    clusters percolate together and Si diffuses and redistributes to form a GeSiGe coreshell structure, and some Ge atoms partially diffuse to the surface as a result of segregation. ...

  10. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J.; Wang, Y. Q. E-mail: barba@emt.inrs.ca; Ross, G. G.; Barba, D. E-mail: barba@emt.inrs.ca

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150 °C for 1 h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301 kJ·mol{sup −1}) are greater than that of Ge-Ge bonds (264 kJ·mol{sup −1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  11. GE Global Research Sourcing External Document & Process Repository...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Global Research Sourcing External Document & Process Repository Home > GE Global Research Sourcing External Document & Process Repository Supplier Integrity Guide Purchase Order...

  12. GE Showcases Industrial Internet Innovations and Promotes Win...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE China Technology Center teams up with Zhangjiang High-tech Management Committee to ... SHANGHAI, Oct. 21 -- The GE China Technology Center presented the newest industrial trends ...

  13. GE Software Expert Julian Keith Loren Discusses Innovation and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ... GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet ...

  14. GE Hybrid Power Generation Systems | Open Energy Information

    Open Energy Info (EERE)

    Name: GE Hybrid Power Generation Systems Place: Georgia Zip: Atlanta Product: Focused on fuel cell stack and system development. References: GE Hybrid Power Generation Systems1...

  15. GE to provide data, analytics to Brazilian Canoe Confederation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE to sponsor Brazilian Canoe Confederation Innovative partnership will pair GE software scientists with athletes to explore how big data can help them optimize their performance ...

  16. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. ...

  17. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Radislav Potyrailo, principal scientist at GE Global Research who leads GE's bio-inspired photonics programs. "This new class of thermal imaging sensors promises significant ...

  18. About Additive Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Introducing Additive Manufacturing at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Introducing Additive Manufacturing at GE Global Research Prabhjot Singh, manager of the Additive Manufacturing Lab at GE Global Research, describes the technology used in his lab. You Might Also Like DirectWrite_V

  19. GE Global Research in Niskayuna, NY

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Niskayuna, USA Niskayuna, USA GE Global Research headquarters is the nerve center for innovative work across technologies and collaboration across GE businesses. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Working at GE Global Research Headquarters Visit the Careers page to search and apply for Global Research jobs

  20. Making Industrial Parts Smarter | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Building More Intelligent GE Products with Additive Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Building More Intelligent GE Products with Additive Manufacturing James Y. Yang 2014.04.03 GE is using 3D printing and other additive technologies to design and produce parts never before possible. We're

  1. Pi in Statistics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Spying on GE Statisticians Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Spying on GE Statisticians Andrew Barnes, an applied mathematician at GE Global Research, leads the sPI CAM around the center to see how researchers use Pi in their work. You Might Also Like Geothermal_V Newest APS Fellow Driving

  2. Study of Pu consumption in Advanced Light Water Reactors. Evaluation of GE Advanced Boiling Water Reactor plants

    SciTech Connect (OSTI)

    Not Available

    1993-05-13

    Timely disposal of the weapons plutonium is of paramount importance to permanently safeguarding this material. GE`s 1300 MWe Advanced Boiling Water Reactor (ABWR) has been designed to utilize fill] core loading of mixed uranium-plutonium oxide fuel. Because of its large core size, a single ABWR reactor is capable of disposing 100 metric tons of plutonium within 15 years of project inception in the spiking mode. The same amount of material could be disposed of in 25 years after the start of the project as spent fuel, again using a single reactor, while operating at 75 percent capacity factor. In either case, the design permits reuse of the stored spent fuel assemblies for electrical energy generation for the remaining life of the plant for another 40 years. Up to 40 percent of the initial plutonium can also be completely destroyed using ABWRS, without reprocessing, either by utilizing six ABWRs over 25 years or by expanding the disposition time to 60 years, the design life of the plants and using two ABWRS. More complete destruction would require the development and testing of a plutonium-base fuel with a non-fertile matrix for an ABWR or use of an Advanced Liquid Metal Reactor (ALMR). The ABWR, in addition, is fully capable of meeting the tritium target production goals with already developed target technology.

  3. Smarter Sleigh Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... and Manufacturing in Europe 2-2-6-v GE Scientists Demonstrate Promising Anti-icing Nano Surfaces 1-2-38-v-software-reliability-engineering A Stochastic Process-Based ...

  4. Oil & Gas Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Oil & Gas Technology Center Click to email this to a friend (Opens in new ... GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology ...

  5. Advanced Composite Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The fan blade is a work of art, with each stripe of composite material laid by hand to ... GE Innovation and Manufacturing in Europe 3-1-9-v-industrial-inspec...

  6. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for GE Intern Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn ...

  7. Remembering Zach Stum | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Remembering Zach Stum Ron Olson 2014.02.25 "To live in hearts we leave behind is not to die." Thomas Campbell, Physicist Zach-Stum On Sunday, February 9, GE Global Research lost a ...

  8. GE Global Research Europe in Munich, Germany

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Click to email ...

  9. High Performance Computing for Manufacturing Parternship | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on ...

  10. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  11. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Water We're developing ways to purify and conserve this vital resource. Take a look at our work. Home > Innovation > Water Innovation 247: We're Always Open At GE Global Research, ...

  12. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Real World in 10 Years primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe a79-v-open-innovation We're Open to Collaboration with Companies Big and Small...

  13. Working in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    You Might Also Like 2-2-5-v GE Unveils High-Tech Superhero, GENIUS MAN IMG0475 Innovation 247: We're Always Open MunichinteriorV 10 Years ON: From the Lab to the...

  14. Kids at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    High-Tech Superhero, GENIUS MAN direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open MunichinteriorV 10...

  15. New Energy Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the innovative ecoROTR wind turbine in a drone GE spent a week flying state-of-the-art drones over and around some of our biggest machines, including the ecoROTR experimental......

  16. Access to Clean Water | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Clean Water Innovations Click to email this to a friend (Opens in new window) Share on ... What Works: Mark Little on Clean Water Innovations Mark Little, director of GE Global ...

  17. Robotic Wind Turbine Inspection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advances Wind Turbine Inspection Through Robotic Trials Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Advances Wind Turbine Inspection Through Robotic Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector

  18. New Transportation Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Transportation We're working with railroads and heavy industries to create hybrid systems, batteries and first-in-class transportation solutions. Home > Innovation > Transportation Silicon Carbide Applications: Small Device, Broad Impact in Power Electronics It's not every day that the engineers at GE Global Research get their hands on a material that's literally revolutionizing an... Read More » Data Science Makes Trains More Efficient In this Special Report, GE's Creator-in-Residence,

  19. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Crowdsourcing Software Platform Wins Award Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Crowdsourcing Software Platform Wins Award GE Global Research, the technology development arm of the General Electric Company (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership 100 award in

  20. Immelt: GE Stands at Intersection of Physical, Digital | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Immelt: GE stands at the intersection of the physical, digital Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Immelt: GE stands at the intersection of the physical, digital GE's 2015 Annual Meeting of Shareowners was held Wednesday, April 22, in Oklahoma City, the location of GE's newest Global Research facility.

  1. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas ... GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas ...

  2. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J.; Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J.; Aoki, Toshihiro

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including

  3. Crystal Chemistry and Luminescence of Ce3+ -Doped Lu2CaMg2(Si,Ge)3O12 and Its Use in LED Based Lighting

    SciTech Connect (OSTI)

    Setlur,A.; Heward, W.; Gao, Y.; Srivastava, A.; Chandron, R.; Shankar, M.

    2006-01-01

    In this paper, we describe the formation and luminescence of a new garnet phosphor for light emitting diode (LED) based lighting, Lu{sub 2}CaMg{sub 2}(Si,Ge){sub 3}O{sub 12}:Ce{sup 3+}.The regions for garnet phase formation are initially described with respect to larger rare earth substitution and show reasonable correlation to previous crystal chemistry studies for the garnet parent structure. While the pure silicate phosphor also has apatite second phases, a significant amount of Ce{sup 3+} enters the garnet phase, giving Ce{sup 3+} luminescence that is significantly redder when compared to typical Al{sup 3+} garnet phosphors with quantum efficiencies comparable to commercial Ce{sup 3+} garnet phosphors. Potential reasons for the emission red shift and the high quantum efficiency are discussed. Finally, the performance of these new phosphors is tested within LED based lamps. Lamps using these phosphors can reach color temperatures required for general illumination lighting and also have comparable phosphor conversion efficiencies when compared to lamps using typical garnet phosphors.

  4. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on Innovation and Entrepreneurship Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) U.S. Secretary of Commerce Penny Pritzker Announces GE's Christine Furstoss to Serve on the National Advisory Council on

  5. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Sundeep Kumar Sundeep Kumar Senior Scientist Ceramics Synthesis & Processing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I leverage the experience and network I have built over the years working with some of the finest minds at GE to help me solve tough technical problems for GE." -Sundeep Kumar

  6. Licensing Our Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teaming Up With Idea Works Puts Our Tech Into the World Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Teaming Up With Idea Works Puts Our Tech Into the World GE Idea Works is extending the reach of our technology by connecting GE's internal intellectual property, technology and resources with the external world. With

  7. Artificial Lift Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Technology: Driving the Artificial Lift Market Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Technology: Driving the Artificial Lift Market Gary Ford, president and CEO of GE Artificial Lift, discusses what the equipment does, the current state of the market and the importance of working with GE's Global Research

  8. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Biofuels Research at GE's Brazil Technology Center Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Biofuels Research at GE's Brazil Technology Center Clayton Zabeu, leader of Brazil Technology Center's Biofuels Center of Excellence, talks about the main objectives of the research programs that will drive the development

  9. Science and BBQ: GE makes its mark, and bark, at SXSW | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Science and BBQ: GE makes its mark ... and bark! Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Science and BBQ: GE makes its mark ... and bark! Lynn DeRose 2015.03.20 This is the fifth in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant

  10. GE launches 'STEM empowers OK' initiative in Oklahoma City | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" stem empowers ok GE Foundation donates $400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to

  11. Who Is Jim Bray, GE Stump the Scientist? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Who Is Jim Bray, GE Stump the Scientist? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Who Is Jim Bray, GE Stump the Scientist? 2012.05.30 Chief Scientist Jim Bray introduces himself and talks about his work and time at GE. 0 Comments Comment Name Email Submit Comment

  12. GE Announces Vic Abate as New Chief Technology Officer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Names Vic Abate New Chief Technology Officer; Succeeds Mark Little Vic Abate, President and CEO of GE's Power Generation business, to succeed Mark Little and continue GE's leadership in the Digital

  13. Synthesis and structural characterization of the new clathrates K8Cd4Ge42, Rb8Cd4Ge42, and Cs8Cd4Ge42

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schafer, Marion; Bobev, Svilen

    2016-03-25

    This paper presents results from our exploratory work in the systems K-Cd-Ge, Rb-Cd-Ge, and Cs-Cd-Ge, which yielded the novel type-I clathrates with refined compositions K8Cd3.77(7)Ge42.23, Rb8Cd3.65(7)Ge42.35, and Cs7.80(1)Cd3.65(6)Ge42.35. The three compounds represent rare examples of clathrates of germanium with the alkali metals, where a d10 element substitutes a group 14 element. The three structures, established by single-crystal X-ray diffraction, indicate that the framework-building Ge atoms are randomly substituted by Cd atoms on only one of the three possible crystallographic sites. Furthermore, this and several other details of the crystal chemistry are elaborated.

  14. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  15. Study of Pu consumption in advanced light water reactors: Evaluation of GE advanced boiling water reactor plants - compilation of Phase 1B task reports

    SciTech Connect (OSTI)

    1993-09-15

    This report contains an extensive evaluation of GE advanced boiling water reactor plants prepared for United State Department of Energy. The general areas covered in this report are: core and system performance; fuel cycle; infrastructure and deployment; and safety and environmental approval.

  16. Secretary Chu Speaks at GE Solar Facility | Department of Energy

    Energy Savers [EERE]

    GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power" I imagine he would be ...

  17. COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1, 2015, 4:00pm to 5:30pm Colloquia MBG Auditorium COLLOQUIUM: Future Electrical Technologies From a GE Viewpoint Dr. James Bray GE Global Research I will give a brief overview of...

  18. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in ... GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today ...

  19. Intern Shares Insight Into Researchers' Minds |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) The Quality of GE Researchers...and Why That's So Important Daniel Cadel 2014.08.14 GE Global Research asked some of our interns to share why they wanted...

  20. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    October 3, 2012 DOE ordered GE Appliances, a Division of General Electric Company to pay a 63,000 civil penalty after finding GE had privately labeled and distributed in commerce ...

  1. Future of 3D Printing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    In 2016, GE will enter a new jet engine into service called the CFM LEAP-the first in GE's line to incorporate 3D-printed parts. Specifically, it will be a combustion component ...

  2. Leptogenesis via the 750 GeV pseudoscalar (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    Leptogenesis via the 750 GeV pseudoscalar Citation Details In-Document Search This content will become publicly available on June 6, 2017 Title: Leptogenesis via the 750 GeV ...

  3. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma students ...

  4. VEA-0016- In the Matter of GE Appliances

    Broader source: Energy.gov [DOE]

    Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month...

  5. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this way. The GE Store is a place where every business can come for technologies, product development and services that no one else can provide. The work of our researchers ties...

  6. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T.; Dobbie, A.; Myronov, M.

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1−x}Ge{sub x} alloys for germanium concentrations x ≤ 0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28 < x ≤ 1 form islands after deposition of ∼3.0/x monolayers (=quarter unit cells in the diamond lattice, ML). The uncertainty in the amount of deposited material for pure Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ∼2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x = 1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  7. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore » dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  8. Ba{sub 6}Ge{sub 25}: low-temperature Ge-Ge bond breaking during temperature-induced structure transformation

    SciTech Connect (OSTI)

    Carrillo-Cabrera, Wilder . E-mail: carrillo@cpfs.mpg.de; Borrmann, Horst; Paschen, Silke; Baenitz, Michael; Steglich, Frank; Grin, Yuri

    2005-03-15

    In order to find the optimal conditions for sample preparation of the binary germanide Ba{sub 6}Ge{sub 25}, the germanium-rich part of the Ba-Ge phase diagram was redetermined by means of metallography, X-ray powder diffraction and differential thermal analysis. The temperature behavior of cubic Ba{sub 6}Ge{sub 25} was investigated both on polycrystalline samples and single crystals. The temperature dependence of the lattice parameter exhibits two anomalies at about 180 and 230K, respectively, which are caused by a structure transformation in two steps with hysteresis. Powder (T=10-295K) and single-crystal (T=95-295K) X-ray diffraction studies confirm that the symmetry of Ba{sub 6}Ge{sub 25} (space group P4{sub 1}32) remains unchanged within the entire temperature range. A reconstructive behavior of the structural transformation is observed, involving Ge-Ge bond breaking and barium cation displacements. Some Ge4 type atoms ({approx}28%) are so significantly displaced during cooling that Ge4-Ge6 bonds break and new three-bonded (3b)Ge{sup -} species (electron acceptors) are formed. Consequently, the number of charge carriers is reduced, affecting the physical properties. The reversible bond breaking involved in this process is a typical characteristic of a solid-state chemical reac0010ti.

  9. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Purchasing Energy-Efficient Windows Purchasing Energy-Efficient Windows October 13, 2008 - 11:29am Addthis John Lippert Windows connect us with the "great outdoors." They let in the light and the rays of the sun and can make even the smallest room seem bright and spacious. Operable windows let fresh air in and stale air out. Windows that are properly selected, well designed and constructed, and properly installed can make a world of difference to a home, helping it to be warm and cozy

  10. Search for a very light NMSSM Higgs boson produced in decays of the 125 GeV scalar boson and decaying into $$\\tau$$ leptons in pp collisions at $$\\sqrt{s} =$$ 8 TeV

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Khachatryan, Vardan

    2016-01-13

    Our search for a very light Higgs boson decaying into a pair of t leptons is presented within the framework of the next-to-minimal supersymmetric standard model. This search is based on a data set corresponding to an integrated luminosity of 19.7 fb-1 of proton-proton collisions collected by the CMS experiment at a centre-of-mass energy of 8 TeV. The signal is defined by the production of either of the two lightest scalars, h1 or h2, via gluon-gluon fusion and subsequent decay into a pair of the lightest Higgs bosons, a1 or h1. The h1 or h2 boson is identified with themore » observed state at a mass of 125 GeV. The analysis searches for decays of the a1 (h1) states into pairs of t leptons and covers a mass range for the a1 (h1) boson of 4 to 8 GeV. Furthermore, the search reveals no significant excess in data above standard model background expectations, and an upper limit is set on the signal production cross section times branching fraction as a function of the a1 (h1) boson mass. The 95% confidence level limit ranges from 4.5 pb at ma1 (mh1 ) = 8 GeV to 10.3 pb at ma1 (mh1 ) = 5 GeV.« less

  11. Zero Liquid Discharge Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reverse Osmosis (RO) Membrane Technology Purifies Water Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Reverse Osmosis (RO) Membrane Technology Purifies Water GE's Reverse Osmosis (RO) Membrane technology addresses industrial waste water treatment and recycling needs, purifying water for cooling, boilers, and general

  12. 12 GeV Upgrade | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using Jefferson Lab's Continuous Electron Beam Accelerator Facility. CEBAF provides physicists with an unprecedented

  13. Impact of Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    IMPACT The needs of the world inspire us to create technologies to build, connect, cure, move and power the world around us. I Want to See Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle Information for Me Game-Changing Technology Work & Life Cool Science STEM Education Most Popular Shuffle How Goal Line Technology Can Improve Industry Productivity » Nano Communication Networks Update » A family of GE engineers » Legendary Vision See where our

  14. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors GE Global Research Centers are home to many of the world's brightest, most inquisitive minds in science and technology. Home > Invention > Inventors Sort: Random First Name Last Name Filter: All Aero-Thermal & Mechanical Systems Chemistry & Chemical Engineering Diagnostics, Imaging & Biomedical Technologies Electrical Technologies & Systems Manufacturing & Materials Technologies Software Sciences & Analytics Joseph Vinciquerra Senior Engineer & Manager

  15. membrane-ge | netl.doe.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bench-Scale High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high performance thin film polymer composite hollow fiber membranes and advanced processes for economical post-combustion carbon dioxide (CO2) capture from pulverized coal flue gas at temperatures typical of existing flue gas cleanup processes. The project will optimize the novel membranes at the bench scale, including

  16. Red phosphor Ca{sub 2}Ge{sub 7}O{sub 16}:Eu{sup 3+} for potential application in field emission displays and white light-emitting diodes

    SciTech Connect (OSTI)

    Wang, Ting; Xu, Xuhui; Zhou, Dacheng; Qiu, Jianbei; Yu, Xue

    2014-12-15

    Abstract: A novel red emitting phosphor of Eu{sup 3+} doped Ca{sub 2}Ge{sub 7}O{sub 16} was prepared through the solid state reaction. The luminescence properties were studied in detail by photoluminescence excitation (PLE), emission (PL) spectra and cathodoluminescence (CL). Under the excitation of ultraviolet light, Ca{sub 2}Ge{sub 7}O{sub 16}:Eu{sup 3+} phosphor shows the characteristic {sup 5}D{sub 0}-{sup 7}F{sub J}(J = 1, 2, 3, 4) transition of Eu{sup 3+} with two different emissions due to the two kinds of Eu{sup 3+} ions. The luminescent intensity could be improved by co-doping with the charge compensators R{sup +} (Li, Na, K) which partially substitute for Ca{sup 2+} crystal sites. CL spectra show that Eu{sup 3+} ions were excited by the plasma produced by the incident electrons and the CL properties of Ca{sub 2}Ge{sub 7}O{sub 16}:Eu{sup 3+}, Li{sup +} as a function of accelerating voltage and probe current were investigated. Ca{sub 2}Ge{sub 7}O{sub 16}:Eu{sup 3+} phosphor offers higher thermal stability compared with the commercial red phosphor Y{sub 2}O{sub 3}:Eu{sup 3+}. The results indicate that Ca{sub 2}Ge{sub 7}O{sub 16}:Eu{sup 3+} can be a suitable red-emitting phosphor candidate for FEDs and w-LEDs.

  17. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  18. Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates

    SciTech Connect (OSTI)

    Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

    2009-05-19

    The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

  19. Meson Spectroscopy at JLab@12 GeV

    SciTech Connect (OSTI)

    Celentano, Andrea

    2013-03-01

    Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

  20. GE and Maker Faire Are a Match Made in Nerd Heaven | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Maker Faire Are a Match Made in Nerd Heaven Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE and Maker Faire Are a Match Made in Nerd Heaven Peter Tu 2011.06.06 This year GE was a sponsor of the spring version of Maker Faire held out in San Francisco. Our main contributions to the festivities consisted of a

  1. GE funds initiative to support STEM initiatives in Oklahoma | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research STEM Empowers OK: Initiative to enrich STEM education in Oklahoma Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff Immelt, GE's

  2. GE's Arnie Lund Discusses User Experience at an Industrial Scale | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Global Research Arnie Lund Discusses User Experience at an Industrial Scale Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's Arnie Lund Discusses User Experience at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the

  3. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light Speed to the Industrial Internet New fiber optic network

  4. Making Silicon Carbide Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making Silicon Carbide Devices in the Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research cleanroom, I wanted to take some time to give you the dirt on our clean room over the

  5. Advanced Propulsion Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) CFM LEAP Aircraft Engines Are Fuel- and Cost-Efficient The new LEAP engine, developed by CFM, has literally taken leaps in engine innovation in both fuel and cost efficiency. Scheduled to enter service in 2016, GE in

  6. Arc Flash Protection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    The Arc Flash Absorber in Bangalore Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The Arc Flash Absorber in Bangalore Take a sneak peek into the high-voltage lab in Bangalore and learn how GE researchers are helping to stabilize electrical distribution. You Might Also Like Munich_interior_V 10 Years ON: From the Lab

  7. Rodrigo Rodriguez Erdmenger | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rodrigo Rodriguez Erdmenger Rodrigo Rodriguez Erdmenger Research Engineer Turbomachinery Aero Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What fuels my passion for work is knowing that I can impact the technology of GE products and lives of people all over the world." -Rodrigo Rodriguez Erdmenger Ask

  8. GE Global Research in Bangalore, India

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Bangalore, India Bangalore, India The first GE Research & Development Center outside the U.S. applies cutting-edge technologies to solve challenges across the first and developing worlds. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Bangalore.

  9. GE Global Research in Oklahoma City

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oklahoma City, USA Oklahoma City, USA GE's first sector-specific global research center is dedicated to developing and accelerating innovative oil and gas technologies. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Visit the Careers page to search and apply for Global Research jobs in Oklahoma City. We also welcome

  10. Unit cell of strained GeSi

    SciTech Connect (OSTI)

    Woicik, J.C.; Bouldin, C.E.; Miyano, K.E.; King, C.A.

    1997-06-01

    The local structure within the unit cell of strained-GeSi layers grown on Si(001) has been examined by polarization-dependent extended x-ray-absorption fine structure. First-neighbor bond lengths are found to deviate only slightly from their unstrained values; however, the distortion of the cubic-unit cell by strain leads to measurable polarization-dependent changes in first-shell coordination and second-shell distances. A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented. {copyright} {ital 1997} {ital The American Physical Society}

  11. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Pierluigi Tenca Pierluigi Tenca Senior Engineer Electric Power Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) ""Because of its unique portfolio of technologies, GE is a fantastic place for multidisciplinary research. This is about learning and exploring."" -Pierluigi Tenca Pierluigi has three

  12. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amol Kolwalkar Amol Kolwalkar Senior Engineer Control & Optimization Systems Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "What motivates me is the thrill and anticipation of finding something that was not previously identified." -Amol Kolwalkar Amol Kolwalkar epitomizes the GE Belief "deliver

  13. Inventors Behind General Electric | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fabio Fonseca Fabio Fonseca Lead Engineer Software and Productivity Analytics CoE Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I try to keep the big picture in mind, especially the positive impact I'm creating with my research." -Fabio Fonseca Fabio started with GE in 2012, where he focused on middleware

  14. Jim Bray Interview | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Behind the Scenes with Chief Scientist Jim Bray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Behind the Scenes with Chief Scientist Jim Bray 2013.04.25 Chief Scientist Jim Bray talks about technology milestones, his career and his life at and away from GE. 0 Comments Comment Name Email Submit Comment You Might Also

  15. Masako Yamada | Inventors | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Masako Yamada Masako Yamada Manager Advanced Computing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) "I believe individuals should be given the chance to reinvent themselves. Recently, I've reinvented myself as a supercomputing person-again." -Masako Yamada Masako began her career at GE in applied optics,

  16. Metal MEMS Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    MEMS: Inside the Global Research Cleanroom Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom to see more about how MEMS are made. You Might Also Like 2-1-8-v-mems-applications Engineer

  17. Ideas Are Scary | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ideas Are Scary Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Ideas Are Scary Ideas are scary, messy, and fragile, but under the proper care, they become something beautiful. GE is a place where ideas are nurtured and brought to life through innovations that make the world better. You Might Also Like

  18. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Advanced Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Advanced Thermal Imaging Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo graphic video of a Morpho butterfly structure in response to heat pulses produced by breathing onto

  19. Pi in Applied Optics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the Applied Optics Lab II Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) The sPI CAM: Inside the Applied Optics Lab II The sPI Cam visits the Applied Optics Lab to see how Mark Meyers, a physicist and optical engineer at GE Global Research, uses Pi. You Might Also Like lightning bolt We One-Upped Ben Franklin,

  20. Power Grid Optimization | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Optimization and Reliability Protect the Power Grid Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Optimization and Reliability Protect the Power Grid Using the power of software, machine learning, power systems, and other advanced analytics as well as next-generation design and visualization techniques, GE is

  1. Testimonials - Partnerships in Fuel Cells - GE Global Research |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis Text Version The words "Office of Energy Efficiency & Renewable Energy, U.S. Department of Energy, EERE Partnership Testimonials," appear on the screen, followed by "Mark Little, Senior Vice President, GE Global Research" and footage of a man in a suit. Mark Little: Energy, manufacturing, innovation, and competitiveness are the core to the

  2. Commissioning and Operation of 12 GeV CEBAF

    SciTech Connect (OSTI)

    Freyberger, Arne P.

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) located at the Thomas Jefferson National Accelerator Laboratory (JLab) has been recently upgraded to deliver continuous electron beams to the experimental users at a maximum energy of 12 GeV, three times the original design energy of 4 GeV. This paper will present an overview of the upgrade, referred to as the 12GeV upgrade, and highlights from recent beam commissioning results.

  3. Optimal Ge/SiGe nanofin geometries for hole mobility enhancement: Technology limit from atomic simulations

    SciTech Connect (OSTI)

    Vedula, Ravi Pramod; Mehrotra, Saumitra; Kubis, Tillmann; Povolotskyi, Michael; Klimeck, Gerhard; Strachan, Alejandro

    2015-05-07

    We use first principles simulations to engineer Ge nanofins for maximum hole mobility by controlling strain tri-axially through nano-patterning. Large-scale molecular dynamics predict fully relaxed, atomic structures for experimentally achievable nanofins, and orthogonal tight binding is used to obtain the corresponding electronic structure. Hole transport properties are then obtained via a linearized Boltzmann formalism. This approach explicitly accounts for free surfaces and associated strain relaxation as well as strain gradients which are critical for quantitative predictions in nanoscale structures. We show that the transverse strain relaxation resulting from the reduction in the aspect ratio of the fins leads to a significant enhancement in phonon limited hole mobility (7× over unstrained, bulk Ge, and 3.5× over biaxially strained Ge). Maximum enhancement is achieved by reducing the width to be approximately 1.5 times the height and further reduction in width does not result in additional gains. These results indicate significant room for improvement over current-generation Ge nanofins, provide geometrical guidelines to design optimized geometries and insight into the physics behind the significant mobility enhancement.

  4. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  5. General Electric in India GE | Open Energy Information

    Open Energy Info (EERE)

    navigation, search Name: General Electric in India (GE) Place: New Delhi, Delhi (NCT), India Zip: 110015 Sector: Services, Wind energy Product: String representation...

  6. Electric Vehicle Technology and Batteries | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    flow battery capable of more than just traditional, stationary energy storage. The chemistries GE scientists are developing will enable a flow battery that derives its ...

  7. Silicon Carbide (SiC) Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at much higher frequencies and temperatures and convert electric power at higher efficiency or lower losses. ... Carbide Power Chip Fabrication Line GE is partnering with the SUNY ...

  8. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ... GE China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational ...

  9. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    capability. New strengths, skills and cultural change are needed across GE, including multilevel leadership, technical and commercial capabilities, signaling a complete...

  10. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  11. The Right Connections: Seeing the Future of Energy | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    renewable resources like wind, water, and sun, to distributing that power to home in smarter and more efficient ways, GE Global Research can see the entire energy ecosystem. ...

  12. GE Software Expert Julian Keith Loren Discusses Innovation and the

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet | GE Global Research GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Julian Keith Loren, a senior product manager at GE

  13. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  14. Engineers Named to National Academy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    3 GE Engineers Elected to National Academy of Engineering Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) 3 GE Engineers Elected to National Academy of Engineering GE (NYSE: GE) announced today that three distinguished engineers, one from the company's Global Research Center, and two from its Aviation business, have

  15. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE software scientists and developers to spur high-speed connectivity and access to really big data Disruptive innovation demonstrates industry success in creating viable test beds ...

  16. Silicon Carbide in the Cleanroom | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inside the GE Global Research Clean Room: Silicon Carbide Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inside the GE Global Research Clean Room: Silicon Carbide GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-research The Dirt

  17. Leptogenesis via the 750 GeV pseudoscalar (Journal Article) ...

    Office of Scientific and Technical Information (OSTI)

    Publisher's Accepted Manuscript: Leptogenesis via the 750 GeV pseudoscalar This content will become publicly available on June 6, 2017 Prev Next Title: Leptogenesis via the ...

  18. Cloud-Based Air Traffic Management Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Aeronautics and Space Administration (NASA) to help bring NextGen air traffic ... GE's program with NASA will identify opportunities within ATM that can benefit from cloud ...

  19. Scientists Develop Sensors Based on Butterfly Wings | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Potyrailo assembled a team funded by DARPA's program on Bio Inspired Photonics, which is now complete, to design and fabricate new sensors. The team included scientists from GE ...

  20. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  1. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Fchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Hche, Thomas; Tnnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380C. Typical Stransky-Krastanov growth is observed at 410C. At lower temperatures (320C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  2. Predix and Robots in CT Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Robots and Predix make Beijing's CT factory brilliant Guoshuang Cai 2015.04.16 GE Healthcare's Beijing plant is one of the largest factories producing computed tomography (CT) ...

  3. 3D Printing Aircraft Parts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GE aircraft engines signals a paradigm shift that is happening with the emergence of additive manufacturing. Additive not only offers the opportunity to design parts never...

  4. Supercomputing with Livermore National Lab | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Working With Livermore National Lab on Supercomputing Click to email this to a friend ... Working With Livermore National Lab on Supercomputing GE Global Research has been selected ...

  5. Data Science Makes Trains More Efficient | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Data Science Makes Trains More Efficient Click to email this to a friend (Opens in new ... Data Science Makes Trains More Efficient In this Special Report, GE's ...

  6. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. |

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  7. Single-crystalline CuGeO{sub 3} nanorods: Synthesis, characterization and properties

    SciTech Connect (OSTI)

    Wang, Fangfang; Xing, Yan; Su, Zhongmin; Song, Shuyan

    2013-07-15

    Graphical abstract: - Highlights: Single crystalline CuGeO{sub 3} nanorods were prepared via a hydrothermal route. The material exhibits greatly enhanced activity in photocatalytic degradation of dyes. The magnetic susceptibility measurements indicate spin-Peierls transition properties. CuGeO{sub 3} nanorods may be of potential application in future integrated optical devices. - Abstract: Single crystalline CuGeO{sub 3} nanorods with a diameter of 2035 nm and a length up to 1 ?m have been prepared via a facile hydrothermal route with the assistance of ethylenediamine. Some influencing factors such as the reaction time, reaction temperature, the volume of ethylenediamine were revealed to play crucial roles in the formation of the CuGeO{sub 3} nanorods. A possible growth mechanism was proposed based on the experimental results. Significantly, this is the first time that CuGeO{sub 3} was used as a photocatalyst for organic pollutant degradation under UV light irradiation. The reaction constant (k) of CuGeO{sub 3} nanorods was five times that of the sample prepared by solid-state reaction under UV light irradiation. Additionally, the optical and magnetic properties of CuGeO{sub 3} nanorods were systematically studied.

  8. Search for a very light NMSSM Higgs boson produced in decays of the 125 GeV scalar boson and decaying into $\\tau$ leptons in pp collisions at $\\sqrt{s} =$ 8 TeV

    SciTech Connect (OSTI)

    Khachatryan, Vardan

    2015-10-23

    Our search for a very light Higgs boson decaying into a pair of t leptons is presented within the framework of the next-to-minimal supersymmetric standard model. This search is based on a data set corresponding to an integrated luminosity of 19.7 fb-1 of proton-proton collisions collected by the CMS experiment at a centre-of-mass energy of 8 TeV. The signal is defined by the production of either of the two lightest scalars, h1 or h2, via gluon-gluon fusion and subsequent decay into a pair of the lightest Higgs bosons, a1 or h1. The h1 or h2 boson is identified with the observed state at a mass of 125 GeV. The analysis searches for decays of the a1 (h1) states into pairs of t leptons and covers a mass range for the a1 (h1) boson of 4 to 8 GeV. Furthermore, the search reveals no significant excess in data above standard model background expectations, and an upper limit is set on the signal production cross section times branching fraction as a function of the a1 (h1) boson mass. The 95% confidence level limit ranges from 4.5 pb at ma1 (mh1 ) = 8 GeV to 10.3 pb at ma1 (mh1 ) = 5 GeV.

  9. XAS/EXAFS studies of Ge nanoparticles produced by reaction between Mg{sub 2}Ge and GeCl{sub 4}

    SciTech Connect (OSTI)

    Pugsley, Andrew J.; Bull, Craig L.; Sella, Andrea; Sankar, Gopinathan; McMillan, Paul F.

    2011-09-15

    We present results of an XAS and EXAFS study of the synthesis of Ge nanoparticles formed by a metathesis reaction between Mg{sub 2}Ge and GeCl{sub 4} in diglyme (diethylene glycol dimethyl ether). The progress of the formation reaction and the products formed at various stages in the processing was characterised by TEM and optical spectroscopy as well as in situ XAS/EXAFS studies using specially designed reaction cells. - Graphical abstract: Nano-Ge particles 2-10 nm in diameter were prepared by reaction between Mg{sub 2}Ge Zintl phase and GeCl{sub 4} in diglyme followed by capping with BuLi and extraction into hexane. We used synchrotron X-ray absorption spectroscopy (XAS) at the Ge K edge with analysis of the EXAFS region combined with room temperature photoluminescence and TEM to characterise the nature of the nanoparticles and model compounds and to follow the course of the reaction. A TEM image of the germanium nanoparticles is shown. Highlights: > In situ characteristaion of germanium nanoparticles. > X-ray spectroscopic technique development. > Improving quality of nanoparticles grown by metathesis route.

  10. Rio 2016 Olympic Games' technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Rio 2016 Olympic Games' technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Rio 2016 Olympic Games' technologies You cannot imagine how far GE reaches into the Rio 2016 Olympic Games. The technologies (visible and invisible) that will light, move, care for and transform the wonderful city on the world's biggest

  11. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  12. Strain and lattice orientation distribution in SiN/Ge complementary metaloxidesemiconductor compatible light emitting microstructures by quick x-ray nano-diffraction microscopy

    SciTech Connect (OSTI)

    Chahine, G. A.; Schlli, T. U.; Zoellner, M. H.; Guha, S.; Reich, C.; Zaumseil, P.; Capellini, G.; Richard, M.-I.; Schroeder, T.

    2015-02-16

    This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction. The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10{sup ?5} (?a/a) with a spatial resolution of ?0.5??m. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive ?-Raman and ?-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling of the strain relaxation dynamics in the investigated structures.

  13. GE Progress Includes 140 Things We Made Yesterday | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Power of Networks in an Age of Gas Peter Evans, PhD Director Global Strategy & Analytics General Electric 2013 EIA Energy Conference June 17-18, 2013 Washington, DC 2 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Sources of competitive advantage Thomas Edison - GE Founder Natural endowments Creative endowments The U.S. is rich in both 3 2013 EIA Energy Conference General Electric © 2013 - All Rights Reserved Physical and digital infrastructure Advantage of

  14. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  15. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  16. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  17. Multiple hadron production by 14. 5 GeV electron and positron scattering from nuclear targets

    SciTech Connect (OSTI)

    Degtyarenko, P.V.; Button-Shafer, J.; Elouadrhiri, L.; Miskimen, R.A.; Peterson, G.A.; Wang, K. ); Gavrilov, V.B.; Kossov, M.V.; Leksin, G.A.; Shuvalov, S.M. ); Dietrich, F.S.; Melnikoff, S.O.; Molitoris, J.D.; Bibber, K.V. )

    1994-08-01

    Multiple proton and pion electroproduction from nuclei are studied. Final states including at least two protons produced by the interaction of 14.5 GeV electrons and positrons with light nuclei (mainly [sup 12]C and [sup 16]O) have been measured, and compared with analogous data from [sup 40]Ar. Scattered electrons and positrons were detected in the energy transfer range from 0.2 to 12.5 GeV, and four-momentum transfer squared range from 0.1 to 5.0 GeV[sup 2]/[ital c][sup 2]. Phenomenological characteristics of the secondary hadron production cross sections such as temperature and velocity of the effective source of hadrons were found to be dependent on energy transfer to the nucleus and independent on the four-momentum transfer squared at energy transfers greater than 2 GeV.

  18. Extended Battery Life in Electric Vehicles | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, Ford, University of Michigan Extend Battery Life for EVs Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, Ford, University of Michigan Extend Battery Life for EVs In what could propel electric vehicles (EVs) miles down the road toward commercial viability, GE researchers, in partnership with Ford Motor Company

  19. Microgravity and Vision in Astronauts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Researchers Study Microgravity and Vision Impairment Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Researchers Study Microgravity and Vision Impairment Scientists at GE Global Research will soon begin a 3-year project to build and test a new ultrasound probe and measurement techniques that could eventually be

  20. GE Showcases Industrial Internet Innovations and Promotes Win-Win

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cooperation at 2015 TECHfest | GE Global Research Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Showcases Industrial Internet Innovations and Promotes Win-Win Cooperation at 2015 TECHfest GE China Technology Center teams

  1. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year $599,000 program to reduce engine noise during takeoffs and landings NISKAYUNA, NY - JUNE 10, 2015 - Scientists

  2. GE Awarded DOE Funding to Pilot Carbon Capture Technology | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Awarded DOE Project to Pilot CO2 Capture Technology for Power Plants Same class of ingredients found in hair conditioners and fabric softeners could hold key to washing out CO2 from Power

  3. GE Develops High Water Recovery Technology in China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Develops High Water Recovery Technology in China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Develops High Water Recovery Technology in China Technology aims to boost development of China's household water purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane

  4. GE partners with 'Girls Who Code' for summer program | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap in Tech Sector Aimed at equipping girls with skills to explore Science, Tech,

  5. Breaking Ground for GE Oil & Gas Tech Center|GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Announces New Technology Partnership with Devon Energy at Global Research Oil & Gas Technology Center in Oklahoma City $125M global hub to

  6. Germanium subcells for multijunction GaInP/GaInAs/Ge solar cells

    SciTech Connect (OSTI)

    Kalyuzhnyy, N. A.; Gudovskikh, A. S.; Evstropov, V. V.; Lantratov, V. M.; Mintairov, S. A.; Timoshina, N. Kh.; Shvarts, M. Z.; Andreev, V. M.

    2010-11-15

    Photovoltaic converters based on n-GaInP/n-p-Ge heterostructures grown by the OMVPE under different conditions of formation of the p-n junction are studied. The heterostructures are intended for use as narrow-gap subcells of the GaInP/GaInAs/Ge three-junction solar cells. It is shown that, in Ge p-tn junctions, along with the diffusion mechanism, the tunneling mechanism of the current flow exists; therefore, the two-diode electrical equivalent circuit of the Ge p-n junction is used. The diode parameters are determined for both mechanisms from the analysis of both dark and 'light' current-voltage dependences. It is shown that the elimination of the component of the tunneling current allows one to increase the efficiency of the Ge subcell by {approx}1% with conversion of nonconcentrated solar radiation. The influence of the tunneling current on the efficiency of the Ge-based devices can be in practice reduced to zero at photogenerated current density of {approx}1.5 A/cm{sup 2} due to the use of the concentrated solar radiation.

  7. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    STEM Empowers OK: Initiative to enrich STEM education in Oklahoma On April 21, 2015, GE announced a grant to the state of Oklahoma to enhance STEM education initiatives. Jeff ...

  8. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  9. The role of surface passivation in controlling Ge nanowire faceting

    SciTech Connect (OSTI)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of the precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.

  10. GE Scientist Stephan Biller Discusses the Industrial Internet...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Biller explained the concept behind GE's Brilliant Factories initiative: "We look at our factories and we try to figure out how do we make use of what people call the global brain? ...

  11. Photovoltaic Power Generation in Flagstaff | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Photovoltaic Power Generation in Flagstaff Click to email this to a friend (Opens in new ... Photovoltaic Power Generation in Flagstaff Kathleen O'Brien 2012.05.25 GE Global Research ...

  12. BELLA generates multi-GeV electron beam

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BELLA generates multi-GeV electron beam Click to share on Facebook (Opens in new window) Click to share on Twitter (Opens in new window) Click to share on Reddit (Opens in new ...

  13. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click ...

  14. The Technology Behind the Locomotives | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Happy Train Day: Celebrating the Bright Minds & Tech Behind GE's Locomotives Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to ...

  15. Kids Invention: Vision of the Future |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Bring your Child to Work Day, to student mentoring, teaching in the class room, Invention Convention and Science Day. To take the message nationally, GE teamed up with the...

  16. Stump the Scientist | Page 2 of 3 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the Video Who Is Jim Bray, GE Stump the Scientist? Watch the Video What Is the Relationship of Electricity and the Human Body? Watch the Video How Close Are We to...

  17. Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    SessionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets...

  18. Electronic and magnetic properties of Si substituted Fe3Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirmmore » these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.« less

  19. The role of surface passivation in controlling Ge nanowire faceting

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Gamalski, A. D.; Tersoff, J.; Kodambaka, S.; Zakharov, D. N.; Ross, F. M.; Stach, E. A.

    2015-11-05

    In situ transmission electron microscopy observations of nanowire morphologies indicate that during Au-catalyzed Ge nanowire growth, Ge facets can rapidly form along the nanowire sidewalls when the source gas (here, digermane) flux is decreased or the temperature is increased. This sidewall faceting is accompanied by continuous catalyst loss as Au diffuses from the droplet to the wire surface. We suggest that high digermane flux and low temperatures promote effective surface passivation of Ge nanowires with H or other digermane fragments inhibiting diffusion and attachment of Au and Ge on the sidewalls. Furthermore, these results illustrate the essential roles of themore » precursor gas and substrate temperature in maintaining nanowire sidewall passivation, necessary to ensure the growth of straight, untapered, <111>-oriented nanowires.« less

  20. Next-Generation Subsea Technology |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    As a result, from 2011 until 2013, at the Ormen Lange field, a compression pilot system, including GE's Blue -C compressor, high-speed motor and a 12 MW variable speed drive has ...

  1. Durathon Battery in New Bus | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    step in reducing the cost of clean fuel, zero emission buses, with a vehicle powered by GE's new Durathon(tm) battery in tandem with a lithium battery and a hydrogen fuel cell. ...

  2. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    W 60,000,000,000 mW 0.06 GW Number of Units 40 Commercial Online Date 2009 Wind Turbine Manufacturer GE Energy References Wind Energy Market Intelligence1 Loading map......

  3. Pattern Recognition and Image Analysis in Materials | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Pattern Recognition and Image Analysis in Materials Jim Grande 2012.09.25 Hi I'm Jim Grande and I've been working at GE Global Research in Niskayuna for over 33...

  4. GE, Clean Energy Fuels Partner to Expand Natural Gas Highway...

    Open Energy Info (EERE)

    GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 -...

  5. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  6. GE Progetti 3i Spa | Open Energy Information

    Open Energy Info (EERE)

    Progetti 3i Spa Jump to: navigation, search Name: GE Progetti & 3i Spa Place: Narni, Italy Sector: Renewable Energy Product: Italy-based engineering firm that is involved with the...

  7. Invention Factory: How Will Robots Evolve | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in your browser. You Might Also Like direct write2square The GE Store for Technology is Open for Business IMG0475 Innovation 247: We're Always Open shutterstock316484033...

  8. Driving Sensing Technology in Oil & Gas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and fellow Photonics Lab team members at GE Global Research. It is a great pleasure to share the news that Dr. William A. Challener, a physicist in the Photonics Laboratory, ...

  9. 3D Printing Medical Devices | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Additive Manufacturing Demonstration at GE Global Research Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in ...

  10. Holiday Shopping and Electric Vehicles | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and it has been working with GE, Con Edison and Columbia University since 2011 on a pilot project in New York City on how to build effective vehicle charging stations. ...

  11. Global Research on On The Verge | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    this video on www.youtube.com, or enable JavaScript if it is disabled in your browser. Paul Miller from On the Verge takes a tour of GE's Global Research Center to see new...

  12. At-Home Natural Gas Refueling | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    At-Home Refueling for Natural Gas (NG) Vehicles Click to email this to a friend (Opens in ... As part of the program, GE researchers will focus on overall system design integration. ...

  13. Arc Vault Significantly Reduces Electrical Hazards | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Arc Vault Significantly Reduces Electrical Hazards Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Arc Vault Significantly Reduces Electrical Hazards GE Global Research 2012.05.01 Recently, technology developed at GE Global Research received high praise from industry leaders for its ability to shield industrial -

  14. ARM - VAP Product - mmcrmode3ge200309091cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200309091cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027343 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200309091CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments Active Dates 2003.09.27 - 2004.08.10

  15. ARM - VAP Product - mmcrmode3ge200804181cloth

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Productsmmcrmodemmcrmode3ge200804181cloth Documentation Data Management Facility Plots (Quick Looks) Citation DOI: 10.5439/1027350 [ What is this? ] Generate Citation ARM Data Discovery Browse Data Comments? We would love to hear from you! Send us a note below or call us at 1-888-ARM-DATA. Send VAP Output : MMCRMODE3GE200804181CLOTH ARSCL: derived, MMCR Mode 3 (general mode) moments, 20080418 version Active Dates 2008.04.18 - 2011.01.04

  16. Brilliant Factories Could Revolutionize Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Brilliant Factories Could Revolutionize Manufacturing Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Brilliant Factories Could Revolutionize Manufacturing GE Global Research's Stephan Biller talks about the benefits that could be realized by making factories brilliant. The GE Store is our name for the company's

  17. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A.; Suslov, A. V.; Mironov, O. A.; Kummer, M.; Känel, H. von

    2014-08-20

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.3–5.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the “two-site” model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|≈4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  18. Properties of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters

    SciTech Connect (OSTI)

    Dong, Yi; Rehman, Habib ur; Springborg, Michael

    2015-01-22

    The structures of Si{sub n}, Ge{sub n}, and Si{sub n}Ge{sub n} clusters with up to 44 atoms have been determined theoretically using an unbiased structure-optimization method in combination with a parametrized, density-functional description of the total energy for a given structure. By analyzing the total energy in detail, particularly stable clusters are identified. Moreover, general trends in the structures are identified with the help of specifically constructed descriptors.

  19. DEGREE-SCALE GeV 'JETS' FROM ACTIVE AND DEAD TeV BLAZARS

    SciTech Connect (OSTI)

    Neronov, A.; Semikoz, D.; Kachelriess, M.; Ostapchenko, S.; Elyiv, A.

    2010-08-20

    We show that images of TeV blazars in the GeV energy band should contain, along with point-like sources, degree-scale jet-like extensions. These GeV extensions are the result of electromagnetic cascades initiated by TeV {gamma}-rays interacting with extragalactic background light and the deflection of the cascade electrons/positrons in extragalactic magnetic fields (EGMFs). Using Monte Carlo simulations, we study the spectral and timing properties of the degree-scale extensions in simulated GeV band images of TeV blazars. We show that the brightness profile of such degree-scale extensions can be used to infer the light curve of the primary TeV {gamma}-ray source over the past 10{sup 7} yr, i.e., over a time scale comparable to the lifetime of the parent active galactic nucleus. This implies that the degree-scale jet-like GeV emission could be detected not only near known active TeV blazars, but also from 'TeV blazar remnants', whose central engines were switched off up to 10 million years ago. Since the brightness profile of the GeV 'jets' depends on the strength and the structure of the EGMF, their observation provides additional information about the EGMF.

  20. Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate

    SciTech Connect (OSTI)

    Liu, Zhi; Li, Yaming; He, Chao; Li, Chuanbo; Xue, Chunlai; Zuo, Yuhua; Cheng, Buwen Wang, Qiming

    2014-05-12

    Horizontal injection Ge p-i-n ridge waveguide light emitting diodes (LEDs) were fabricated on n{sup ?}-Si(001) substrates by ultrahigh vacuum chemical vapor deposition. The direct-bandgap electroluminescence (EL) of Ge waveguide LEDs under a continuous/pulse electrical pump was studied. The heating effect from a continuous electrical pump was found to significantly enhance the emission of devices. The top surface EL intensity of the Ge waveguide LEDs significantly depended on the position. Most direct-bandgap radiative recombination of Ge p-i-n waveguide LEDs occurred near the N{sup +} region of the junction. This interesting phenomenon could be explained by the carrier distribution in the junction and the pseudo-direct bandgap of Ge.

  1. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  2. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  3. CEBAF SRF Performance during Initial 12 GeV Commissioning

    SciTech Connect (OSTI)

    Bachimanchi, Ramakrishna; Allison, Trent; Daly, Edward; Drury, Michael; Hovater, J; Lahti, George; Mounts, Clyde; Nelson, Richard; Plawski, Tomasz

    2015-09-01

    The Continuous Electron Beam Accelerator Facility (CEBAF) energy upgrade from 6 GeV to 12 GeV includes the installation of eleven new 100 MV cryomodules (88 cavities). The superconducting RF cavities are designed to operate CW at an accelerating gradient of 19.3 MV/m with a QL of 3×107. Not all the cavities were operated at the minimum gradient of 19.3 MV/m with the beam. Though the initial 12 GeV milestones were achieved during the initial commissioning of CEBAF, there are still some issues to be addressed for long term reliable operation of these modules. This paper reports the operational experiences during the initial commissioning and the path forward to improve the performance of C100 (100 MV) modules.

  4. RHIC 100 GeV Polarized Proton Luminosity

    SciTech Connect (OSTI)

    Zhang, S. Y.

    2014-01-17

    A big problem in RHIC 100 GeV proton run 2009 was the significantly lower luminosity lifetime than all previous runs. It is shown in this note that the beam intensity decay in run 2009 is caused by the RF voltage ramping in store. It is also shown that the beam decay is not clearly related to the beam momentum spread, therefore, not directly due to the 0.7m. β* Furthermore, the most important factor regarding the low luminosity lifetime is the faster transverse emittance growth in store, which is also much worse than the previous runs, and is also related to the RF ramping. In 100 GeV proton run 2012a, the RF ramping was abandoned, but the β* was increased to 0.85m, with more than 20% loss of luminosity, which is not necessary. It is strongly suggested to use smaller β* in 100 GeV polarized proton run 2015/2016

  5. Strong emission of terahertz radiation from nanostructured Ge surfaces

    SciTech Connect (OSTI)

    Kang, Chul; Maeng, Inhee; Kee, Chul-Sik; Leem, Jung Woo; Yu, Jae Su; Kim, Tae Heon; Lee, Jong Seok

    2015-06-29

    Indirect band gap semiconductors are not efficient emitters of terahertz radiation. Here, we report strong emission of terahertz radiation from germanium wafers with nanostructured surfaces. The amplitude of THz radiation from an array of nano-bullets (nano-cones) is more than five (three) times larger than that from a bare-Ge wafer. The power of the terahertz radiation from a Ge wafer with an array of nano-bullets is comparable to that from n-GaAs wafers, which have been widely used as a terahertz source. We find that the THz radiation from Ge wafers with the nano-bullets is even more powerful than that from n-GaAs for frequencies below 0.6 THz. Our results suggest that introducing properly designed nanostructures on indirect band gap semiconductor wafers is a simple and cheap method to improve the terahertz emission efficiency of the wafers significantly.

  6. Flat Ge-doped optical fibres for food irradiation dosimetry

    SciTech Connect (OSTI)

    Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

    2015-04-24

    Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

  7. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  8. Nanotextured Anti-Icing Surfaces | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Demonstrate Promising Anti-icing Nano Surfaces Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Scientists Demonstrate Promising Anti-icing Nano Surfaces GE Global Research today presented new research findings on its nanotextured anti-icing surfaces. In addition to dramatically reducing ice adhesion, these surfaces

  9. Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital Region and Upstate Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Governor Cuomo Announces 100 Businesses Led by GE to Join $500 Million

  10. Miniaturized Turbine Offers Desalination Solution | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Puts Desalination "on Ice" to Produce Clean Water at Low Cost Awarded US Department of Energy program to test breakthrough concept in water desalination Designing innovative process to

  11. High Performance Computing for Manufacturing Parternship | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE, US DOE Partner on HPC4Mfg projects to deliver new capabilities in 3D Printing and higher jet engine efficiency NISKAYUNA, NY, February 17,

  12. Itinerant magnetism in metallic CuFe2Ge2

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Shanavas, K. V.; Singh, David J.; He, Ruihua

    2015-03-25

    Theoretical calculations are performed to understand the electronic structure and magnetic properties of CuFe2Ge2. The band structure reveals large electron density N(EF) at the Fermi level suggesting a strong itinerant character of magnetism. The Fermi surface is dominated by two dimensional sheet like structures, with potentially strong nesting between them. The magnetic ground state appears to be ferromagnetic along a and antiferromagnetic in other directions. The results show that CuFe2Ge2 is an antiferromagnetic metal, with similarities to the Fe-based superconductors; such as magnetism with substantial itinerant character and coupling between magnetic order and electrons at the Fermi energy.

  13. Scientists Develop Sensors Based on Butterfly Wings | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    New Bio-inspired Design from GE reported in Nature Communications Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) New Bio-inspired Design from GE reported in Nature Communications Nanostructures fabricated following a design of natural Morpho butterfly wings demonstrate highly selective response to gases in a variable

  14. Answering Mom: What Is Cloud Computing? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Plant | Department of Energy Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of <a href="http://edelman.com/">Edelman</a>. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image

  15. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Low-Cost Thermal Imaging Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Butterfly-Inspired Design Enables Low-Cost Thermal Imaging Taking heat detection to a new level of sensitivity and speed, a team of scientists at GE Global Research, the technology development arm for the General Electric Company (NYSE: GE),

  16. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  17. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  18. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  19. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; et al

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

  20. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  1. Combined wet and dry cleaning of SiGe(001)

    SciTech Connect (OSTI)

    Park, Sang Wook; Kaufman-Osborn, Tobin; Kim, Hyonwoong; Siddiqui, Shariq; Sahu, Bhagawan; Yoshida, Naomi; Brandt, Adam; Kummel, Andrew C.

    2015-07-15

    Combined wet and dry cleaning via hydrofluoric acid (HF) and atomic hydrogen on Si{sub 0.6}Ge{sub 0.4}(001) surface was studied at the atomic level using ultrahigh vacuum scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and x-ray photoelectron spectroscopy to understand the chemical transformations of the surface. Aqueous HF removes native oxide, but residual carbon and oxygen are still observed on Si{sub 0.6}Ge{sub 0.4}(001) due to hydrocarbon contamination from post HF exposure to ambient. The oxygen contamination can be eliminated by shielding the sample from ambient via covering the sample in the HF cleaning solution until the sample is introduced to the vacuum chamber or by transferring the sample in an inert environment; however, both processes still leave carbon contaminant. Dry in-situ atomic hydrogen cleaning above 330 °C removes the carbon contamination on the surface consistent with a thermally activated atomic hydrogen reaction with surface hydrocarbon. A postdeposition anneal at 550 °C induces formation of an atomically flat and ordered SiGe surface observed by STM. STS verifies that the wet and dry cleaned surface has an unpinned Fermi level with no states between the conduction and valence band edge comparable to sputter cleaned SiGe surfaces.

  2. GE Partners with Lab on Ultrasonic Clothes Dryer

    Broader source: Energy.gov [DOE]

    This video tells how a partnership between Oak Ridge National Laboratory and GE Appliances--with support from the Office of Energy Efficiency and Renewable Energy’s (EERE’s) Building Technologies Office—is changing the way Americans do laundry with their ultrasonic drying technology that uses vibrations, not heat, to dry fabric.

  3. Ge doped GaN with controllable high carrier concentration for...

    Office of Scientific and Technical Information (OSTI)

    Ge doped GaN with controllable high carrier concentration for plasmonic applications Citation Details In-Document Search Title: Ge doped GaN with controllable high carrier...

  4. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Beam On Target - CEBAF Accelerator Achieves 12 GeV Commissioning Milestone Beam On Target CEBAF Accelerator Achieves 12 GeV Commissioning Milestone The accelerator crew on hand ...

  5. Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development...

    Open Energy Info (EERE)

    Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Jump to: navigation, search Name: Xianggelila Xian Ge Ji Liu Yu Xia Zhi En Hydroelectric Development Ltd Place: Xianggelila...

  6. GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers

    Broader source: Energy.gov [DOE]

    GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

  7. Performance of First C100 Cryomodules for the CEBAF 12 GeV Upgrade...

    Office of Scientific and Technical Information (OSTI)

    The goal of the project is a doubling of the available beam energy of CEBAF from 6 GeV to 12 GeV. This increase in beam energy will be due primarily to the construction and ...

  8. 9 GeV energy gain in a beam-driven plasma wakefield accelerator...

    Office of Scientific and Technical Information (OSTI)

    9 GeV energy gain in a beam-driven plasma wakefield accelerator Citation Details In-Document Search Title: 9 GeV energy gain in a beam-driven plasma wakefield accelerator An ...

  9. Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd...

    Open Energy Info (EERE)

    Xiang Ge Li La Xian Mai Di He Hydro Power Development Co Ltd Jump to: navigation, search Name: Xiang Ge Li La Xian Mai Di He Hydro Power Development Co., Ltd. Place: Yunnan...

  10. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  11. Microsoft PowerPoint - GE-Prolec CCE Meeting 10/19/2010 | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 PowerPoint slides on GE-Prolec CCE meeting regarding Docket No. EERE-2010-BT-CE-0014 PDF icon Microsoft PowerPoint - ...

  12. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers GE urges the...

  13. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  14. Illuminating the 130 GeV Gamma Line with Continuum Photons (Journal...

    Office of Scientific and Technical Information (OSTI)

    Illuminating the 130 GeV Gamma Line with Continuum Photons Citation Details In-Document Search Title: Illuminating the 130 GeV Gamma Line with Continuum Photons Authors: Cohen,...

  15. GE-Prolec CCE Meeting October 19,2010 | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    EERE-2010-BT-CE-0014 GE-Prolec CCE Meeting October 19,2010 More Documents & Publications Microsoft PowerPoint - GE-Prolec CCE Meeting 10192010 Microsoft Word -...

  16. Brilliant Wind Turbine | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lights From Dark Places Bright Lights From Dark Places May 23, 2011 - 2:09pm Addthis Charles Rousseaux Charles Rousseaux Senior Communications Specialist (detailee) What are the key facts? Scientists used the illumination of some 14,000 quasars -- powered by gigantic black holes at the heart of galaxies -- about 10 to 12 billion light years away to create the new map. Scientists at the Energy Department's national labs are using black holes to illuminate the distant parts of the universe in

  17. Sn-enriched Ge/GeSn nanostructures grown by MBE on (001) GaAs and Si wafers

    SciTech Connect (OSTI)

    Sadofyev, Yu. G. Martovitsky, V. P.; Klekovkin, A. V.; Saraykin, V. V.; Vasil’evskii, I. S.

    2015-12-15

    Elastically stressed metastable GeSn layers with a tin molar fraction as large as 0.185 are grown on (001) Si and GaAs wafers covered with a germanium buffer layer. A set of wafers with a deviation angle in the range 0°–10° is used. It is established that the GeSn crystal undergoes monoclinic deformation with the angle β to 88° in addition to tetragonal deformation. Misorientation of the wafers surface results in increasing efficiency of the incorporation of tin adatoms into the GeSn crystal lattice. Phase separation in the solid solution upon postgrowth annealing of the structures begins long before the termination of plastic relaxation of elastic heteroepitaxial stresses. Tin released as a result of GeSn decomposition predominantly tends to be found on the surface of the sample. Manifestations of the brittle–plastic mechanism of the relaxation of stresses resulting in the occurrence of microcracks in the subsurface region of the structures under investigation are found.

  18. Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

    SciTech Connect (OSTI)

    Vanacore, G. M.; Zani, M.; Tagliaferri, A.; Nicotra, G.; Bollani, M.; Bonera, E.; Montalenti, F.; Picco, A.; Boioli, F.; Capellini, G.; Isella, G.; Osmond, J.

    2015-03-14

    The hetero-epitaxial strain relaxation in nano-scale systems plays a fundamental role in shaping their properties. Here, the elastic and plastic relaxation of self-assembled SiGe islands grown by surface-thermal-diffusion from a local Ge solid source on Si(100) are studied by atomic force and transmission electron microscopies, enabling the simultaneous investigation of the strain relaxation in different dynamical regimes. Islands grown by this technique remain dislocation-free and preserve a structural coherence with the substrate for a base width as large as 350 nm. The results indicate that a delay of the plastic relaxation is promoted by an enhanced Si-Ge intermixing, induced by the surface-thermal-diffusion, which takes place already in the SiGe overlayer before the formation of a critical nucleus. The local entropy of mixing dominates, leading the system toward a thermodynamic equilibrium, where non-dislocated, shallow islands with a low residual stress are energetically stable. These findings elucidate the role of the interface dynamics in modulating the lattice distortion at the nano-scale, and highlight the potential use of our growth strategy to create composition and strain-controlled nano-structures for new-generation devices.

  19. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we have written of progress with the CEBAF 12 GeV Upgrade Project. ...

  20. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R.

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  1. Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition

    SciTech Connect (OSTI)

    Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E.

    2011-05-01

    The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

  2. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100MeV) afterglow emission spectrum is F {sub ?}??{sup 0.54} {sup } {sup 0.15} in the first ?1300s after the trigger and the most energetic photon has an energy of ?62GeV, arriving at t ? 520s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of theGeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  3. Nucleon Form Factors above 6 GeV

    DOE R&D Accomplishments [OSTI]

    Taylor, R. E.

    1967-09-01

    This report describes the results from a preliminary analysis of an elastic electron-proton scattering experiment... . We have measured cross sections for e-p scattering in the range of q{sup 2} from 0.7 to 25.0 (GeV/c){sup 2}, providing a large region of overlap with previous measurements. In this experiment we measure the cross section by observing electrons scattered from a beam passing through a liquid hydrogen target. The scattered particles are momentum analyzed by a magnetic spectrometer and identified as electrons in a total absorption shower counter. Data have been obtained with primary electron energies from 4.0 to 17.9 GeV and at scattering angles from 12.5 to 35.0 degrees. In general, only one measurement of a cross section has been made at each momentum transfer.

  4. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  5. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed; Whipple, Richard E.; Grant, Patrick M.; O'Brien, Jr., Harold A.

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  6. Engineering Camp Puts STEAM Roller in Motion |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering Institute Exposes Young Girls to Engineering Fields Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Engineering Institute Exposes Young Girls to Engineering Fields Cheryl Sabourin 2014.08.13 GE Global Research recently hosted 30 middle schools students from the Niskayuna Engineering Institute for Young

  7. Inventors in Action: Extreme Subsea Machines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors in Action: Extreme Subsea Machines Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Extreme Subsea Machines GE Researchers Oliver Astley, Power Conversion and Delivery Technology Leader, Konrad Weeber, Chief Engineer, Electrical Technologies and Systems, and Sergio Sabedotti, Offshore and

  8. Industrial Dojo Program Fosters Industrial Internet Development | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Launches Cloud Foundry 'Industrial Dojo,' Contributes to Open Source to Foster Continued Development of the Industrial Internet

  9. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  10. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  11. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for π0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and -t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS π0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  12. On the origin of GeV emission in gamma-ray bursts

    SciTech Connect (OSTI)

    Beloborodov, Andrei M.; Hascoët, Romain; Vurm, Indrek

    2014-06-10

    The most common progenitors of gamma-ray bursts (GRBs) are massive stars with strong stellar winds. We show that the GRB blast wave in the wind should emit a bright GeV flash. It is produced by inverse-Compton cooling of the thermal plasma behind the forward shock. The main part of the flash is shaped by scattering of the prompt MeV radiation (emitted at smaller radii) which streams through the external blast wave. The inverse-Compton flash is bright due to the huge e {sup ±} enrichment of the external medium by the prompt radiation ahead of the blast wave. At late times, the blast wave switches to normal synchrotron-self-Compton cooling. The mechanism is demonstrated by a detailed transfer simulation. The observed prompt MeV radiation is taken as an input of the simulation; we use GRB 080916C as an example. The result reproduces the GeV flash observed by the Fermi telescope. It explains the delayed onset, the steep rise, the peak flux, the time of the peak, the long smooth decline, and the spectral slope of GeV emission. The wind density required to reproduce all these features is typical of Wolf-Rayet stars. Our simulation predicts strong TeV emission 1 minute after the burst trigger; then a cutoff in the observed high-energy spectrum is expected from absorption by extragalactic background light. In addition, a bright optical counterpart of the GeV flash is predicted for plausible values of the magnetic field; such a double (optical+GeV) flash has been observed in GRB 130427A.

  13. Giant piezoelectricity of monolayer group IV monochalcogenides: SnSe, SnS, GeSe, and GeS

    SciTech Connect (OSTI)

    Fei, Ruixiang; Yang, Li; Li, Wenbin; Li, Ju

    2015-10-26

    We predict enormous, anisotropic piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe, and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their piezoelectric coefficients are about one to two orders of magnitude larger than those of other 2D materials, such as MoS{sub 2} and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique “puckered” C{sub 2v} symmetry and electronic structure of monolayer group IV monochalcogenides. Given the achieved experimental advances in the fabrication of monolayers, their flexible character, and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  14. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  15. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2−} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2−} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  16. Dirac gauginos, R symmetry and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Bertuzzo, Enrico; Frugiuele, Claudia; Gregoire, Thomas; Ponton, Eduardo

    2015-04-20

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We then analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. Furthermore, we estimate the fine-tuning of the model finding regions of the parameter space still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.

  17. Dirac gauginos, R symmetry and the 125 GeV Higgs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia; Gregoire, Thomas; Ponton, Eduardo

    2015-04-20

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We then analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. Furthermore, we estimate the fine-tuning of the model finding regions of the parameter spacemore » still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.« less

  18. Dirac gauginos, R symmetry and the 125 GeV Higgs

    SciTech Connect (OSTI)

    Bertuzzo, Enrico; Frugiuele, Claudia; Grgoire, Thomas; Pontn, Eduardo

    2015-04-01

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. We estimate the fine-tuning of the model finding regions of the parameter space still unexplored by the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.

  19. Lattice study of an electroweak phase transition at m{sub h} ? 126 GeV

    SciTech Connect (OSTI)

    Laine, M.; Nardini, G.; Rummukainen, K. E-mail: germano@physik.uni-bielefeld.de

    2013-01-01

    We carry out lattice simulations of a cosmological electroweak phase transition for a Higgs mass m{sub h} ? 126 GeV. The analysis is based on a dimensionally reduced effective theory for an MSSM-like scenario including a relatively light coloured SU(2)-singlet scalar, referred to as a right-handed stop. The non-perturbative transition is stronger than in 2-loop perturbation theory, and may offer a window for electroweak baryogenesis. The main remaining uncertainties concern the physical value of the right-handed stop mass which according to our analysis could be as high as m{sub t-tilde{sub R}} ? 155 GeV; a more precise effective theory derivation and vacuum renormalization than available at present are needed for confirming this value.

  20. Dirac gauginos, R symmetry and the 125 GeV Higgs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia; Grgoire, Thomas; Pontn, Eduardo

    2015-04-01

    We study a supersymmetric scenario with a quasi exact R-symmetry in light of the discovery of a Higgs resonance with a mass of 125 GeV. In such a framework, the additional adjoint superfields, needed to give Dirac masses to the gauginos, contribute both to the Higgs mass and to electroweak precision observables. We analyze the interplay between the two aspects, finding regions in parameter space in which the contributions to the precision observables are under control and a 125 GeV Higgs boson can be accommodated. We estimate the fine-tuning of the model finding regions of the parameter space still unexploredmoreby the LHC with a fine-tuning considerably improved with respect to the minimal supersymmetric scenario. In particular, sizable non-holomorphic (non-supersoft) adjoints masses are required to reduce the fine-tuning.less

  1. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  2. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman; Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H.; Loubychev, Dmitri; Liu, Amy; Fastenau, Joel; Lindemuth, Jeff

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5 lower effective mass for s-InSb compared to s-Ge quantum well at 1.9??10{sup 12}?cm{sup 2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  3. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  4. Gambit Satellite Work Declassified After 25 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gambit Satellite Work Declassified After 25 Years Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Gambit Satellite Work Declassified After 25 Years GE Global Research 2011.11.07 As much as we can, and do, share information about what we're working on at Global Research on this blog, I don't think it comes as any

  5. Santa's sleigh becomes 'smarter' this Christmas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Santa's sleigh becomes "Intelligent Machine" this Christmas Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Santa's sleigh becomes "Intelligent Machine" this Christmas Thomas The Elf 2014.12.19 Hi there, Thomas the Elf here. I just returned to the North Pole from GE's research labs in Upstate New

  6. Work & Life at Munich | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Work & Life at Munich Work & Life at Munich Living at Germany's Cosmopolitan Crossroads offers easy access to outdoor pursuits in the Alps and travel throughout Europe. Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Volunteers Our volunteers commit each year to multiple events such as

  7. Meeting Energy Needs in Brazil |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking a Decade Ahead: Electrical Power Generation in Brazil Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de Janeiro (GRC-R), we research both new

  8. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  9. Digital Twins of physical assets prevents unplanned downtime | GE Global

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Research a 'Digital Twin' for physical assets can help achieve no unplanned downtime Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) How a 'Digital Twin' for physical assets can help achieve no unplanned downtime Mark Grabb and Matt Nielsen, data scientists at GE Global Research, explain the importance of data

  10. Application of RTG (SiGe) technology to MESUR

    SciTech Connect (OSTI)

    Vicente, F.A. )

    1993-01-15

    This paper discusses providing electrical power for the Mars Environmental Survey (MESUR) mission. The use of radioisotope thermoelectric generator (RTG) technology using SiGe enables total satisfaction of the mission requirements. This technology permits placing the survey landers at any location on Mars, with the capability of transmitting data directly to Earth. If a relay satellite is deployed, the modular construction of the RTG permits tailoring the power to match that mission configuration. Presented are various configurations and trades directed toward achieving operational status, first with a pathfinder'' mission and subsequently with the full complement of landers.

  11. Mark Jonkhof Talks Wind Energy Sustainability | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Mark Jonkhof Talks Wind Energy Sustainability Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Mark Jonkhof Talks Wind Energy Sustainability Arin Lastufka 2012.11.09 Hello world! My name is Arin Lastufka, and I'm a student in this year's A-Course, as part of the Edison Engineering Development Program here at GE's Global

  12. China Technology Center Celebrates 15 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    China Technology Center Celebrates 15 Years of Innovation "In China for China" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE's China Technology Center Celebrates 15 Years of Innovation "In China for China" Unveils Visionary Technology Blueprint called "The Next List" Shanghai, China, 5

  13. Making 3D Printed Christmas Ornaments | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Making 3D Printed Christmas Ornaments Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Making 3D Printed Christmas Ornaments Thomas The Elf 2011.12.20 Hi everybody! I am back again this year, bringing you some more holiday cheer from the GE Global Research labs! As an encore to the redesign of Santa's sleigh and

  14. Hybrid and Electric Traction Motor | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A World-Class Traction Motor for Hybrid and Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) A World-Class Traction Motor for Hybrid and Electric Vehicles Engineers at GE Global Research are advancing motor technology that could have a substantial impact on hybrid and electric vehicles (EVs) of the

  15. Unimpossible Missions: The University Edition | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Can you do the impossible? Enter our Unimpossible Missions: The University Edition challenge Earlier this year, three teams of GE Global Research

  16. Industrial Materials and Inspection Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Materials and Inspection Technologies Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Industrial Materials and Inspection Technologies Waseem Faidi 2013.06.12 Hi, I am Waseem Faidi and I lead the Inspection and Metrology Lab at GE Global Research in developing novel inspection and process monitoring solutions

  17. Innovate in China, Innovate for China | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Innovate in China, Innovate for China Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Innovate in China, Innovate for China Xiangli Chen, Ph.D. 2015.06.05 15 years is nothing but a fleeting moment. I can still recall the day when a 10-member GE China technology team settled in Shanghai 15 years ago. Back then, we had an

  18. Inventors in Action: Energy Everywhere | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Inventors in Action: Energy Everywhere Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Inventors in Action: Energy Everywhere Different parts of the world present different problems and have different needs in the quest to deliver clean, efficient power to homes and businesses. In this Google+ Hangout, GE experts from

  19. Really Cool Models of Ice Nucleation | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Really Cool Models of Ice Nucleation Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Really Cool Models of Ice Nucleation Rick Arthur 2013.08.20 I'm excited to highlight some progress GE Research has made in modeling the formation of ice from water droplets in contact with cold surfaces. For several years, a

  20. Collaborative Approach Will Improve Malaria Diagnostic Test | GE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Collaborative Approach Will Improve Malaria Detection Test Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Collaborative Approach Will Improve Malaria Detection Test John Nelson 2015.02.13 As some folks are aware, GE is involved in biotechnology development. Recently, we joined forces with Global Good to help tackle

  1. Slow Mo Guys and Cold Spray | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Slow Mo Guys and Cold Spray Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Slow Mo Guys and Cold Spray ) The Slow Mo Guys came to GE Global Research in Niskayuna to film our researchers demonstrate a process called "cold spray", in which metal powders are sprayed at high velocities to build a part or add

  2. BBQ -- Is It Science or Art? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    BBQ - Is it Science or Art? Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) BBQ - Is it Science or Art? Lynn DeRose 2015.03.13 This is the first in a five-part series of dispatches from GE's Science of Barbecue Experience at South by Southwest. Our state-of-the-art Brilliant Super-Smoker is outfitted with sensors to

  3. Microsoft Word - DOE-ID-13-005 GE Hitachi EC B3-6.doc

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    5 SECTION A. Project Title: Next Generation Electromagnetic Pump: Analysis Tools and Insulation Materials Development - GE Hitachi Nuclear Energy Americas LLC SECTION B. Project Description GE Hitachi, teaming with Argonne National Laboratory, proposes to improve electromagnetic (EM) pump analysis model and EM design and analysis tools for next-generation EM pumps. Additionally, GE Hitachi proposes to develop, produce, and evaluate samples of new pump insulation materials. SECTION C.

  4. Structure and vibrations of different charge Ge impurity in α-quartz

    SciTech Connect (OSTI)

    Kislov, A. N. Mikhailovich, A. P. Zatsepin, A. F.

    2014-10-21

    Atomic structure and localized vibrations of α‐SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  5. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band kp method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30??10{sup 18}?cm{sup ?3}.

  6. Charge trapping of Ge-nanocrystals embedded in TaZrO{sub x} dielectric films

    SciTech Connect (OSTI)

    Lehninger, D. Seidel, P.; Geyer, M.; Schneider, F.; Heitmann, J.; Klemm, V.; Rafaja, D.; Borany, J. von

    2015-01-12

    Ge-nanocrystals (NCs) were synthesized in amorphous TaZrO{sub x} by thermal annealing of co-sputtered Ge-TaZrO{sub x} layers. Formation of spherical shaped Ge-NCs with small variation of size, areal density, and depth distribution was confirmed by high-resolution transmission electron microscopy. The charge storage characteristics of the Ge-NCs were investigated by capacitance-voltage and constant-capacity measurements using metal-insulator-semiconductor structures. Samples with Ge-NCs exhibit a maximum memory window of 5 V by sweeping the bias voltage from −7 V to 7 V and back. Below this maximum, the width of the memory window can be controlled by the bias voltage. The fitted slope of the memory window versus bias voltage characteristics is very close to 1 for samples with one layer Ge-NCs. A second layer Ge-NCs does not result in a second flat stair in the memory window characteristics. Constant-capacity measurements indicate charge storage in trapping centers at the interfaces between the Ge-NCs and the surrounding materials (amorphous matrix/tunneling oxide). Charge loss occurs by thermal detrapping and subsequent band-to-band tunneling. Reference samples without Ge-NCs do not show any memory window.

  7. Commissioning of the 123 MeV injector for 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wang, Yan; Hofler, Alicia S.; Kazimi, Reza

    2015-09-01

    The upgrade of CEBAF to 12GeV included modifications to the injector portion of the accelerator. These changes included the doubling of the injection energy and relocation of the final transport elements to accommodate changes in the CEBAF recirculation arcs. This paper will describe the design changes and the modelling of the new 12GeV CEBAF injector. Stray magnetic fields have been a known issue for 6 GeV CEBAF injector, the results of modelling the new 12GeV injector and the resulting changes implemented to mitigate this issue are describe in this paper. The results of beam commissioning of the injector are also presented.

  8. Isotropic plasma etching of Ge Si and SiNx films

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Henry, Michael David; Douglas, Erica Ann

    2016-05-01

    This study reports on selective isotropic dry etching of chemically vapor deposited (CVD) Ge thin film, release layers using a Shibaura chemical downstream etcher (CDE) with NF3 and Ar based plasma chemistry. Relative etch rates between Ge, Si and SiNx are described with etch rate reductions achieved by adjusting plasma chemistry with O2. Formation of oxides reducing etch rates were measured for both Ge and Si, but nitrides or oxy-nitrides created using direct injection of NO into the process chamber were measured to increase Si and SiNx etch rates while retarding Ge etching.

  9. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd (Kvaerner Hangfa)) Place:...

  10. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  11. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 Citation ... Resource Relation: Journal Name: Proceedings of the National Academy of Sciences of the ...

  12. Jefferson Lab Accelerator Delivers Its First 12 GeV Electrons | Jefferson

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Lab Accelerator Delivers Its First 12 GeV Electrons On December 14, full-energy 12 GeV electron beam was provided for the first time, to the Experimental Hall D complex, located in the upper, left corner of this aerial photo of the Continuous Electron Beam Accelerator Facility. Hall D is the new experimental research facility - added to CEBAF as part of the 12 GeV Upgrade project. Beam was also delivered to Hall A (dome in the lower left). Jefferson Lab Accelerator Delivers Its First 12 GeV

  13. Study of plutonium disposition using existing GE advanced Boiling Water Reactors

    SciTech Connect (OSTI)

    Not Available

    1994-06-01

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the US to dispose of 50 to 100 metric tons of excess of plutonium in a safe and proliferation resistant manner. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing permanent conversion and long-term diversion resistance to this material. The NAS study ``Management and Disposition of Excess Weapons Plutonium identified Light Water Reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a US disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a typical 1155 MWe GE Boiling Water Reactor (BWR) is utilized to convert the plutonium to spent fuel. A companion study of the Advanced BWR has recently been submitted. The MOX core design work that was conducted for the ABWR enabled GE to apply comparable fuel design concepts and consequently achieve full MOX core loading which optimize plutonium throughput for existing BWRs.

  14. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more » the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  15. Search for GeV GRBs at Chacaltaya

    SciTech Connect (OSTI)

    Castellina, A.; Ghia, P. L.; Morello, C.; Trinchero, G.; Vallania, P.; Vernetto, S.; Navarra, G.; Saavedra, O.; Yoshii, H.; Kaneko, T.; Kakimoto, K.; Nishi, K.; Cabrera, R.; Urzagasti, D.; Velarde, A.; Barthelmy, S. D.; Butterworth, P.; Cline, T. L.; Gehrels, N.; Fishman, G. J.

    1998-05-16

    In this paper we present the results of a search for GeV Gamma Ray Bursts made by the INCA experiment during the first 9 months of operation. INCA, an air shower array located at Mount Chacaltaya (Bolivia) at 5200 m a.s.l., has been searching for GRBs since December 1996. Up to August, 1997, 34 GRBs detected by BATSE occurred in the field of view of the experiment. For any burst, the counting rate of the array in the 2 hours interval around the burst trigger time has been studied. No significant excess has been observed. Assuming for the bursts a power low energy spectrum extending up to 1 TeV with a slope {alpha}=-2 and a duration of 10 s, the obtained 1 GeV-1 TeV energy fluence upper limits range from 7.9 10{sup -5} erg cm{sup -2} to 3.5 10{sup -3} erg cm{sup -2} depending on the event zenith angles.

  16. Phase-correct bond lengths in crystalline Ge{sub x}Si{sub 1{minus}x} alloys

    SciTech Connect (OSTI)

    Woicik, J.C.; Miyano, K.E.; King, C.A.; Johnson, R.W.; Pellegrino, J.G.; Lee, T.; Lu, Z.H.

    1998-06-01

    Extended x-ray absorption fine structure performed at the Ge K edge has found the Ge-Ge and Ge-Si bond lengths in a series of crystalline Ge{sub x}Si{sub 1{minus}x} alloys (x{le}0.5) to be compositionally dependent. This accurate measurement was made possible by utilizing the {ital experimentally} derived Ge-Si atomic phase shift from the isoelectronic compounds AlAs and GaP. Strain and Coulomb contributions to the bond lengths are also considered. {copyright} {ital 1998} {ital The American Physical Society}

  17. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  18. Structural properties of Ge on SrTiO{sub 3} (001) surface and Ge/SrTiO{sub 3} interface

    SciTech Connect (OSTI)

    Pu, Long; Wang, Jianli Tang, Gang; Zhang, Junting

    2015-03-14

    Germanium−perovskite oxide heterostructures have a strong potential for next-generation low-voltage and low-leakage metal-oxide semiconductor field-effect transistors. We investigated the atomic structure and electronic properties of Ge on perfect and defective (001) SrTiO{sub 3} by first-principle calculations. The specific adsorption sites at the initial growth stage and the atomic structure of Ge on the SrTiO{sub 3} (001) substrate have been systematically investigated. The surface grand potential was calculated and compared as a function of the relative chemical potential. The complete surface phase diagram was presented. The energetically favorable interfaces were pointed out among the atomic arrangements of the Ge/SrTiO{sub 3} (001) interfaces. The atomic structure and electronic properties of the intrinsic point defects were calculated and analyzed for the Ge/SrTiO{sub 3} (001) interfaces.

  19. ({lambda}, p) Spectrum Analysis in p+A Interactions at 10 GeV/c

    SciTech Connect (OSTI)

    Aslanyan, P. Zh.; Emelyanenko, V. N.

    2007-06-13

    Experimental data from the 2m propane bubble chamber have been analyzed for exotic baryon states search. A number of peculiarities were found in the effective mass spectra of: {lambda}{pi}+({sigma}*+(1382),PDG), {lambda}p and {lambda}pp subsystems. A few events detected on the photographs of the propane bubble chamber exposed to a 10 GeV/c proton beam, were interpreted as S=-2 H0 light(

  20. Mid infrared optical properties of Ge/Si quantum dots with different doping level

    SciTech Connect (OSTI)

    Sofronov, A. N.; Firsov, D. A.; Vorobjev, L. E.; Shalygin, V. A.; Panevin, V. Yu.; Vinnichenko, M. Ya.; Tonkikh, A. A.; Danilov, S. N.

    2013-12-04

    Optical characterization of the Ge/Si quantum dots using equilibrium and photo-induced absorption spectroscopy in the mid-infrared spectral range was performed in this work. Equilibrium absorption spectra were measured in structures with various doping levels for different light polarizations. Photo-induced absorption spectra measured in undoped structure under interband optical excitation of non-equilibrium charge carriers demonstrate the same features as doped sample in equilibrium conditions. Hole energy spectrum was determined from the analysis of experimental data.

  1. A Bunch Length Monitor for JLab 12 GeV Upgrade

    SciTech Connect (OSTI)

    Ahmad, Mahmoud Mohamad Ali; Freyberger, Arne P.; Gubeli, Joseph F.; Krafft, Geoffrey A.

    2013-12-01

    A continuous non-invasive bunch length monitor for the 12 GeV upgrade of Jefferson Lab will be used to determine the bunch length of the beam. The measurement will be done at the fourth dipole of the injector chicane at 123 MeV using the coherent synchrotron light emitted from the dipole. The estimated bunch length is 333 fs. A vacuum chamber will be fabricated and a Radiabeam real time interferometer will be used. In this paper, background, the estimated calculations and the construction of the chamber will be discussed.

  2. Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem

    SciTech Connect (OSTI)

    Emtsev, Vadim; Oganesyan, Gagik

    2014-02-21

    The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

  3. Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Laroche, D.; Huang, S. -H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Lu, T. M.

    2016-06-06

    We report the magneto-transport, scattering mechanisms, and e ective mass analysis of an ultralow density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si0:2Ge0:8 heterostructure. This fabrication technique allows hole densities as low as p 1:1 1010 cm² to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, / n , is found to be 0:29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration modelmore » is used to explain the mobility decrease at the highest achievable densities. The hole e ective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p 1:0 1011cm², the e ective mass m is 0:105 m0, which is signi cantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.« less

  4. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary; Wiseman, Mark A.; Daly, Ed

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  5. Structural and electrical properties of In-implanted Ge

    SciTech Connect (OSTI)

    Feng, R. Kremer, F.; Mirzaei, S.; Medling, S. A.; Ridgway, M. C.; Sprouster, D. J.; Decoster, S.; Glover, C. J.; Russo, S. P.

    2015-10-28

    We report on the effects of dopant concentration on the structural and electrical properties of In-implanted Ge. For In concentrations of ≤ 0.2 at. %, extended x-ray absorption fine structure and x-ray absorption near-edge structure measurements demonstrate that all In atoms occupy a substitutional lattice site while metallic In precipitates are apparent in transmission electron micrographs for In concentrations ≥0.6 at. %. Evidence of the formation of In-vacancy complexes deduced from extended x-ray absorption fine structure measurements is complimented by density functional theory simulations. Hall effect measurements of the conductivity, carrier density, and carrier mobility are then correlated with the substitutional In fraction.

  6. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  7. Studies of beam halo formation in the 12GeV CEBAF design

    SciTech Connect (OSTI)

    Yves Roblin; Arne Freyberger

    2007-06-01

    Beam halo formation in the beam transport design for the Jefferson Lab 12GeV upgrade was investigated using 12GeV beam transport models as well as data from 6GeV CEBAF operations. Various halo sources were considered; these covered both nuclear interactions with beam gas as well as optics-related effects such as non linearities in the magnetic fields of the transport elements. Halo due to beam gas scattering was found to be less of a problem at 12GeV compared to the 6GeV machine. Halo due to non linear effects of magnetic elements was characterized as a function of beam orbit and functional forms of the distribution were derived. These functional forms were used as inputs in subsequent detector optimizations studies.

  8. Effects of Laser Wavelength and Fluence in Pulsed Laser Deposition of Ge Films

    SciTech Connect (OSTI)

    Yap, Seong Shan; Reenaas, Turid Worren; Siew, Wee Ong; Tou, Teck Yong; Ladam, Cecile

    2011-03-30

    Nanosecond lasers with ultra-violet, visible and infrared wavelengths: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were used to ablate polycrystalline Ge target and deposit Ge films in vacuum (<10-6 Torr). Time-integrated optical emission spectra were obtained for laser fluence from 0.5-10 J/cm{sup 2}. Neutrals and ionized Ge species in the plasma plume were detected by optical emission spectroscopy. Ge neutrals dominated the plasma plume at low laser fluence while Ge{sup +} ions above some threshold fluence. The deposited amorphous thin-film samples consisted of particulates of size from nano to micron. The relation of the film properties and plume species at different laser fluence and wavelengths were discussed.

  9. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  10. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated...

    Office of Scientific and Technical Information (OSTI)

    Ge and Cosub 2FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a ... Country of Publication: United States Language: English Subject: 36 MATERIALS SCIENCE; 71 ...

  11. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  12. Parity Violation Inelastic Scattering Experiments at 6 GeV and 12 GeV Jefferson Lab

    SciTech Connect (OSTI)

    Sulkosky, Vincent A.; et. al.,

    2015-03-01

    We report on the measurement of parity-violating asymmetries in the deep inelastic scattering and nucleon resonance regions using inclusive scattering of longitudinally polarized electrons from an unpolarized deuterium target. The effective weak couplings C$_{2q}$ are accessible through the deep-inelastic scattering measurements. Here we report a measurement of the parity-violating asymmetry, which yields a determination of 2C$_{2u}$ - C$_{2d}$ with an improved precision of a factor of five relative to the previous result. This result indicates evidence with 95% confidence that the 2C$_{2u}$ - C$_{2d}$ is non-zero. This experiment also provides the first parity-violation data covering the whole resonance region, which provide constraints on nucleon resonance models. Finally, the program to extend these measurements at Jefferson Lab in the 12 GeV era using the Solenoidal Large Intensity Device was also discussed.

  13. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  14. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  15. Structural, thermal, and photoacoustic study of nanocrystalline Cr{sub 3}Ge produced by mechanical alloying

    SciTech Connect (OSTI)

    Prates, P. B.; Maliska, A. M.; Ferreira, A. S.; Borges, Z. V.; Lima, J. C. de

    2015-10-21

    A thermodynamic analysis of the Cr-Ge system suggested that it was possible to produce a nanostructured Cr{sub 3}Ge phase by mechanical alloying. The same analysis showed that, due to low activation energies, Cr-poor crystalline and/or amorphous alloy could also be formed. In fact, when the experiment was performed, Cr{sub 11}Ge{sub 19} and amorphous phases were present for small milling times. For milling times larger than 15 h these additional phases decomposed and only the nanostructured Cr{sub 3}Ge phase remained up to the highest milling time used (32 h). From the differential scanning calorimetry measurements, the Avrami exponent n was obtained, indicating that the nucleation and growth of the nanostructured Cr{sub 3}Ge phase may be restricted to one or two dimensions, where the Cr and Ge atoms diffuse along the surface and grain boundaries. In addition, contributions from three-dimensional diffusion with a constant nucleation rate may be present. The thermal diffusivity of the nanostructured Cr{sub 3}Ge phase was determined by photoacoustic absorption spectroscopy measurements.

  16. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    SciTech Connect (OSTI)

    Maeta, Takahiro; Sueoka, Koji

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  17. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A. Nguyen Hoang, T.; Afanas'ev, V. V.

    2014-07-28

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7??10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44??0.04?eV and E{sub d}?=?2.23??0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20??0.02?eV and ?E{sub d}?=?0.15??0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is

  18. Channeling, Volume Reection and Gamma Emission Using 14GeV Electrons in Bent Silicon Crystals

    SciTech Connect (OSTI)

    Benson, Brandon

    2015-08-14

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  19. Study of plutonium disposition using the GE Advanced Boiling Water Reactor (ABWR)

    SciTech Connect (OSTI)

    1994-04-30

    The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the U.S. to disposition 50 to 100 metric tons of excess of plutonium in parallel with a similar program in Russia. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing long-term diversion resistance to this material. The NAS study {open_quotes}Management and Disposition of Excess Weapons Plutonium{close_quotes} identified light water reactor spent fuel as the most readily achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a U.S. disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a 1350 MWe GE Advanced Boiling Water Reactor (ABWR) is utilized to convert the plutonium to spent fuel. The ABWR represents the integration of over 30 years of experience gained worldwide in the design, construction and operation of BWRs. It incorporates advanced features to enhance reliability and safety, minimize waste and reduce worker exposure. For example, the core is never uncovered nor is any operator action required for 72 hours after any design basis accident. Phase 1 of this study was documented in a GE report dated May 13, 1993. DOE`s Phase 1 evaluations cited the ABWR as a proven technical approach for the disposition of plutonium. This Phase 2 study addresses specific areas which the DOE authorized as appropriate for more in-depth evaluations. A separate report addresses the findings relative to the use of existing BWRs to achieve the same goal.

  20. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600 °C for 30, 60, and 90 s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27 nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  1. Research Perspectives at Jefferson Lab: 12 GeV and Beyond

    SciTech Connect (OSTI)

    Kees de Jager

    2002-09-01

    The plans for upgrading the CEBAF accelerator at Jefferson Lab to 12 GeV are presented. The research program supporting that upgrade are illustrated with a few selected examples. The instrumentation under design to carry out that research program is discussed. Finally, a conceptual design of a future upgrade which combines a 25 GeV fixed-target facility and an electron-ion collider facility at a luminosity of up to 10{sup 35}cm{sup -2}s{sup -1} and a CM energy of over 40 GeV.

  2. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; stling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (22500??10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  3. JLab's 12 GeV Upgrade Project Clears Critical Hurdle | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    JLab's 12 GeV Upgrade Project Clears Critical Hurdle JLab's 12 GeV Upgrade Project Clears Critical Hurdle Independent Project Review committee members Independent Project Review committee members, visiting JLab to evaluate the readiness of the 12 GeV Upgrade project, tour Hall B during their site visit. Here they view the CEBAF Large Acceptance Spectrometer as Hall B Leader Volker Burkert and Lead Engineer Dave Kashy explain the system. NEWPORT NEWS, VA - The U.S. Department of Energy's Thomas

  4. Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 |

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 Jefferson Lab to Mark the End of CEBAF 6 GeV Operations on May 18 CEBAF_Aerial.jpg Jefferson Lab will officially end 6 GeV operations of the Continuous Electron Beam Accelerator Facility during a short ceremony planned for May 18 in the Machine Control Center. This aerial photo depicts the basic outline of the tunnel housing CEBAF - the accelerator and the experimental halls. NEWPORT NEWS, VA - The U.S. Department of Energy's

  5. Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Outcomes Across Industry | GE Global Research Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing Outcomes Across Industry Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Altran and GE Announce Intention to Form an Alliance to Drive Game-Changing Outcomes Across Industry Both companies to

  6. Neutron Cross-Section Evaluations for 70,72,73,74,76Ge

    SciTech Connect (OSTI)

    Iwamoto, O.; Herman, M.; Mughabghab, S.F.; Oblozinsky, P.; Trkov, A.

    2005-05-24

    Entirely new evaluations have been performed for neutrons on all isotopes of Ge, from a thermal energy up to 20 MeV, with a focus on photon production. The resonance parameters were considerably improved compared to earlier evaluations. The fast-neutron region has been evaluated using the EMPIRE-2.19 code. The results were validated against photon data on Fe and Nb. Isotopic evaluations for Ge were summed up and compared with available measurements on natural Ge. Various quantities related to photon production, showing strong dependence on neutron incident energy, are discussed.

  7. Early Commissioning Experience and Future Plans for the 12 GeV Continuous Electron Beam Accelerator Facility

    SciTech Connect (OSTI)

    Spata, Michael F.

    2014-12-01

    Jefferson Lab has recently completed the accelerator portion of the 12 GeV Upgrade for the Continuous Electron Beam Accelerator Facility. All 52 SRF cryomodules have been commissioned and operated with beam. The initial beam transport goals of demonstrating 2.2 GeV per pass, greater than 6 GeV in 3 passes to an existing experimental facility and greater than 10 GeV in 5-1/2 passes have all been accomplished. These results along with future plans to commission the remaining beamlines and to increase the performance of the accelerator to achieve reliable, robust and efficient operations at 12 GeV are presented.

  8. Potential improvements in SiGe radioisotope thermoelectric generator performance

    SciTech Connect (OSTI)

    Mowery, A.L.

    1999-01-01

    In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

  9. Right-handed neutrino production rate at T>160 GeV

    SciTech Connect (OSTI)

    Ghisoiu, I.; Laine, M.

    2014-12-16

    The production rate of right-handed neutrinos from a Standard Model plasma at a temperature above a hundred GeV has previously been evaluated up to NLO in Standard Model couplings (g∼2/3) in relativistic (M∼πT) and non-relativistic regimes (M≫πT), and up to LO in an ultrarelativistic regime (M≲gT). The last result necessitates an all-orders resummation of the loop expansion, accounting for multiple soft scatterings of the nearly light-like particles participating in 1↔2 reactions. In this paper we suggest how the regimes can be interpolated into a result applicable for any right-handed neutrino mass and at all temperatures above 160 GeV. The results can also be used for determining the lepton number washout rate in models containing right-handed neutrinos. Numerical results are given in a tabulated form permitting for their incorporation into leptogenesis codes. We note that due to effects from soft Higgs bosons there is a narrow intermediate regime around M∼g{sup 1/2}T in which our interpolation is phenomenological and a more precise study would be welcome.

  10. Right-handed neutrino production rate at T>160 GeV

    SciTech Connect (OSTI)

    Ghisoiu, I.; Laine, M. E-mail: laine@itp.unibe.ch

    2014-12-01

    The production rate of right-handed neutrinos from a Standard Model plasma at a temperature above a hundred GeV has previously been evaluated up to NLO in Standard Model couplings (g ? 2/3) in relativistic (M ? ?T) and non-relativistic regimes (M >> ?T), and up to LO in an ultrarelativistic regime (M ?< gT). The last result necessitates an all-orders resummation of the loop expansion, accounting for multiple soft scatterings of the nearly light-like particles participating in 1 ? 2 reactions. In this paper we suggest how the regimes can be interpolated into a result applicable for any right-handed neutrino mass and at all temperatures above 160GeV. The results can also be used for determining the lepton number washout rate in models containing right-handed neutrinos. Numerical results are given in a tabulated form permitting for their incorporation into leptogenesis codes. We note that due to effects from soft Higgs bosons there is a narrow intermediate regime around (M?g{sup 1/2}T in which our interpolation is phenomenological and a more precise study would be welcome.

  11. Oil and Gas Technology at Rio de Janeiro | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    the Oil & Gas industry to the task of developing new technologies for subsea, offshore drilling and flow assurance, especially related to pre-salt extraction. It drives GE Oil & ...

  12. The JLAB 12 GeV Energy Upgrade of CEBAF (Conference) | SciTech...

    Office of Scientific and Technical Information (OSTI)

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, ...

  13. CEBAF at 12 and 25 GeV (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Formal construction start could be in 2006. The same cryomodule design would subsequently be the building block for an eventual upgrade to 25 GeV. Authors: Harwood, Leigh ; Reece, ...

  14. Electronic and magnetic properties of Si substituted Fe3Ge

    SciTech Connect (OSTI)

    Shanavas, Kavungal Veedu; McGuire, Michael A.; Parker, David S.

    2015-09-23

    Using first principles calculations we studied the effect of Si substitution in the hexagonal Fe3Ge. We find the low temperature magnetic anisotropy in this system to be planar and originating mostly from the spin-orbit coupling in Fe-d states. Reduction of the unitcell volume reduces the in-plane magnetic anisotropy, eventually turning it positive which reorients the magnetic moments to the axial direction. We find that substituting Ge with the smaller Si ions also reduces the anisotropy, potentially enhancing the region of stability of the axial magnetization, which is beneficial for magnetic applications. Thus our experimental measurements on samples of Fe3Ge1–xSix confirm these predictions and show that substitution of about 6% of the Ge with Si increases by approximately 35 K the temperature range over which anisotropy is uniaxial.

  15. How a Minecraft book got noticed on Amazon | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    engineer uses research tools to market Minecraft books Click to email this to a friend ... GE engineer uses research tools to market Minecraft books Mark Cheverton 2015.03.09 Book ...

  16. A drone's-eye view of a wind turbine | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Flying above the innovative ecoROTR wind turbine in a drone Click to email this to a ... Flying above the innovative ecoROTR wind turbine in a drone GE spent a week flying ...

  17. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound ...

  18. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113...

    Office of Scientific and Technical Information (OSTI)

    Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1) Citation Details In-Document Search Title: Spin-Glass Behavior in a Giant Unit Cell Compound ...

  19. Black GE based on crystalline/amorphous core/shell nanoneedle arrays

    DOE Patents [OSTI]

    Javey, Ali; Chueh, Yu-Lun; Fan, Zhiyong

    2014-03-04

    Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays with ultrasharp tips (.about.4 nm) enabled by the Ni catalyzed vapor-solid-solid growth process. Ge nanoneedle arrays exhibit remarkable optical properties. Specifically, minimal optical reflectance (<1%) is observed, even for high angles of incidence (.about.75.degree.) and for relatively short nanoneedle lengths (.about.1 .mu.m). Furthermore, the material exhibits high optical absorption efficiency with an effective band gap of .about.1 eV. The reported black Ge can have important practical implications for efficient photovoltaic and photodetector applications on nonconventional substrates.

  20. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    SciTech Connect Search Results Journal Article: Ultrahigh-pressure polyamorphism in GeO 2 ... Type: Published Article Journal Name: Proceedings of the National Academy of Sciences of ...

  1. Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination...

    Office of Scientific and Technical Information (OSTI)

    Ultrahigh-pressure polyamorphism in GeO 2 glass with coordination number >6 This content ... Type: Published Article Journal Name: Proceedings of the National Academy of Sciences of ...

  2. Ge Interface Engineering with Ozone-oxidation for Low Interface State Density

    SciTech Connect (OSTI)

    Kuzum, Duygu; Krishnamohan, T.; Pethe, Abhijit J.; Okyay, Ali, K.; Oshima, Yasuhiro; Sun, Yun; McVittie, Jim P.; Pianetta, Piero A.; McIntyre, Paul C.; Saraswat, Krishna C.; /Stanford U., CIS

    2008-06-02

    Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this letter, we introduce ozone-oxidation to engineer Ge/insulator interface. Interface states (D{sub it}) values across the bandgap and close to conduction bandedge were extracted using conductance technique at low temperatures. D{sub it} dependency on growth conditions was studied. Minimum D{sub it} of 3 x 10{sup 11} cm{sup -2} V{sup -1} was demonstrated. Physical quality of the interface was investigated through Ge 3d spectra measurements. We found that the interface and D{sub it} is strongly affected by the distribution of oxidation states and quality of the suboxide.

  3. Metallization and Hall-effect of Mg{sub 2}Ge under high pressure

    SciTech Connect (OSTI)

    Li, Yuqiang; Gao, Yang; Han, Yonghao Liu, Cailong; Peng, Gang; Ke, Feng; Gao, Chunxiao; Wang, Qinglin; Ma, Yanzhang

    2015-10-05

    The electrical transport properties of Mg{sub 2}Ge under high pressure were studied with the in situ temperature-dependent resistivity and Hall-effect measurements. The theoretically predicted metallization of Mg{sub 2}Ge was definitely found around 7.4 GPa by the temperature-dependent resistivity measurement. Other two pressure-induced structural phase transitions were also reflected by the measurements. Hall-effect measurement showed that the dominant charge carrier in the metallic Mg{sub 2}Ge was hole, indicating the “bad metal” nature of Mg{sub 2}Ge. The Hall mobility and charge carrier concentration results pointed out that the electrical transport behavior in the antifluorite phase was controlled by the increase quantity of drifting electrons under high pressure, but in both anticotunnite and Ni{sub 2}In-type phases it was governed by the Hall mobility.

  4. New Global Oil & Gas Hub in Oklahoma City | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation Click to ... GE Selects Oklahoma City Site for New Global Hub of Oil & Gas Technology Innovation New ...

  5. Plastic relaxation in GeSi layers on Si (001) and Si (115) substrates

    SciTech Connect (OSTI)

    Drozdov, Yu. N. Drozdov, M. N.; Yunin, P. A.; Yurasov, D. V.; Shaleev, M. A.; Novikov, A. V.

    2015-01-15

    It is demonstrated using X-ray diffraction and atomic force microscopy that elastic stresses in GeSi layers on Si (115) substrates relax more effectively than in the same layers on Si (001) substrates. This fact is attributed to the predominant contribution of one of the (111) slip planes on the (115) cut. The atomicforce-microscopy image of the GeSi/Si(115) surface reveals unidirectional slip planes, while the GeSi/Si(001) image contains a grid of orthogonal lines and defects at the points of their intersection. As a result, thick GeSi layers on Si (115) have a reduced surface roughness. A technique for calculating the parameters of relaxation of the layer on the Si (115) substrate using X-ray diffraction data is discussed.

  6. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials...

    Office of Scientific and Technical Information (OSTI)

    Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials ... Resource Relation: Journal Name: Appl. Phys. Lett.; Journal Volume: 104; Journal Issue: 25 Research ...

  7. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect (OSTI)

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas

  8. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning Milestone

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    | Jefferson Lab Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning Milestone Beam On Target! CEBAF Accelerator Achieves 12 GeV Commissioning Milestone The accelerator crew on hand The accelerator crew on hand for the beam-on-target achievement included (l-r) Crew Chief Mike McCaughan, Accelerator Operators Dan Moser and Brandi Cade. Yves Roblin was the Accelerator Physics Experimental Liaison for the Hall A beamline, Accelerator Scientist Yan Wang recorded and provided insight

  9. 1.3??m photoluminescence of Ge/GaAs multi-quantum-well structure

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A. Kudryavtsev, K. E.; Rumyantsev, V. V.; Tonkikh, A. A.; Zakharov, N. D.; Zvonkov, B. N.

    2014-01-28

    In this paper, we report on photoluminescence studies of a multiple quantum well Ge/GaAs heterostructure grown by laser-assisted sputtering. A broad luminescence peak is found at about 1.3??m at room temperature. We attribute this peak to the direct band gap transitions between ?-valley electrons in the GaAs matrix and valence band heavy holes in Ge quantum wells.

  10. Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials

    Office of Scientific and Technical Information (OSTI)

    (Journal Article) | SciTech Connect Journal Article: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Citation Details In-Document Search Title: Ultrafast Terahertz-Induced Response of GeSbTe Phase-Change Materials Authors: Shu, Michael J. ; Zalden, Peter ; Chen, Frank ; Weems, Ben ; Chatzakis, Ioannis ; Xiong, Feng ; Jeyasingh, Rakesh ; Hoffmann, Matthias C. ; Pop, Eric ; Wong, H.-S.Philip ; Wuttig, Matthias ; Lindenberg, Aaron M. Publication Date: 2014-07-08 OSTI

  11. Strangelet search in S-W collisions at 200[ital A] GeV/[ital c

    SciTech Connect (OSTI)

    Borer, K.; Dittus, F.; Frei, D.; Hugentobler, E.; Klingenberg, R.; Moser, U.; Pretzl, K.; Schacher, J.; Stoffel, F.; Volken, W. ); Elsener, K.; Lohmann, K.D. ); Baglin, C.; Bussiere, A.; Guillaud, J.P. ); Appelquist, G.; Bohm, C.; Hovander, B.; Sellden, B.; Zhang, Q.P. )

    1994-03-07

    A search for new massive particles with a low charge to mass ratio in S-W collisions at a beam momentum of 200 GeV/[ital c] per nucleon is presented. Upper limits for the production of strangelets with a mass to charge ratio of up to 60 GeV/[ital c][sup 2] at rigidities of [plus minus]150 GV are reported.

  12. Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

    SciTech Connect (OSTI)

    Taoka, Noriyuki Fukudome, Motoshi; Takeuchi, Wakana; Arahira, Takamitsu; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki

    2014-05-07

    The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200?C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500?C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33?eV from the conduction band minimum and 0.55?eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500?C was observed. The effect of H{sub 2} annealing at around 200?C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

  13. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  14. In-situ crystallization of GeTe\\GaSb phase change memory stacked films

    SciTech Connect (OSTI)

    Velea, A.; Borca, C. N.; Grolimund, D.; Socol, G.; Galca, A. C.; Popescu, M.; Bokhoven, J. A. van

    2014-12-21

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points probe method, showed transition temperatures of 138 °C and 198 °C for GeTe and GaSb single films, respectively. It was found that after GeTe crystallization in the stacked films, Ga atoms from the GaSb layer diffused in the vacancies of the GeTe crystalline structure. Therefore, the crystallization temperature of the Sb-rich GaSb layer is decreased by more than 30 °C. Furthermore, at 210 °C, the antimony excess from GaSb films crystallizes as a secondary phase. At higher annealing temperatures, the crystalline Sb phase increased on the expense of GaSb crystalline phase which was reduced. Extended X-ray absorption fine structure (EXAFS) measurements at the Ga and Ge K-edges revealed changes in their local atomic environments as a function of the annealing temperature. Simulations unveil a tetrahedral configuration in the amorphous state and octahedral configuration in the crystalline state for Ge atoms, while Ga is four-fold coordinated in both as-deposited and annealed samples.

  15. Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

    SciTech Connect (OSTI)

    Baranwal, V. Pandey, Avinash C.; Gerlach, J. W.; Lotnyk, A.; Rauschenbach, B.; Karl, H.; Ojha, S.; Avasthi, D. K.; Kanjilal, D.

    2015-10-07

    200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.

  16. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ≤ x ≤ 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ˚C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x

  17. Diversity of Functionalized Germanium Zintl Clusters: Syntheses and Theoretical Studies of [Ge9PdPPh3]3- and [Ni@(Ge9PdPPh3)]2-

    SciTech Connect (OSTI)

    Sun, Zhong-Ming; Zhao, Ya-Fan; Li, Jun; Wang, Lai S.

    2009-09-10

    A new Zintl cluster [Ge9PdPPh3]3- has been isolated as (2,2,2-crypt)K+ salt through the reaction of K4Ge9 and Pd[PPh3]4 in ethylenediamine solutions and characterized via single-crystal X-ray crystallography. The as-prepared bimetallic [Ge9PdPPh3]3- cluster could successfully trap a nickel atom to form a trimetallic cluster [Ni@(Ge9PdPPh3)]2-. The coordination of Ge94- by PdPPh3 induces a one-electron oxidation and encapsulation of the Ni atom into the Ge93- cage leads to a further one-electron oxidation and a geometry transformation from C4v (nido) to C3v (closo).

  18. The First-cycle Electrochemical Lithiation of Crystalline Ge Dopant and Orientation Dependence, and Comparison with Si

    SciTech Connect (OSTI)

    Chan, Maria K.Y.; Long, Brandon R.; Gewirth, Andrew A.; Greeley, Jeffrey P.

    2011-12-15

    We use first principles Density Functional Theory (DFT), cyclic voltammetry (CV), and Raman spectroscopy to investigate the first-cycle electrochemical lithiation of Ge in comparison with Si both high-capacity anode materials for Li ion batteries. DFT shows a significant difference in the dilute solubility of Li in Si and Ge, despite similarities in their chemical and physical properties. We attribute this difference to electronic, as opposed to elastic, effects. CV and Raman data reveal little dopant dependence in the lithiation onset voltages in Ge, unlike in Si, due to a smaller energy difference between dilute Li insertion in p-type Ge and bulk germanide formation than the corresponding difference in Si. Finally, we show that there is no orientation dependence in lithiation onset voltages in Ge. We conclude that approaches other than microstructuring are needed to fabricate effective electrodes able to take advantage of the higher rate capability of Ge compared to that of Si.

  19. Electrical properties of diluted n- and p-Si{sub 1−x}Ge{sub x} at small x

    SciTech Connect (OSTI)

    Emtsev, V. V.; Abrosimov, N. V.; Kozlovskii, V. V.; Oganesyan, G. A.

    2014-12-15

    Hall effect and conductivity measurements are taken on Si{sub 1−x}Ge{sub x} of n- and p-type at x ≤ 0.05. Much attention is given to electrical measurements over a temperature interval of 25 to 40 K where the mobility of charged carriers is strongly affected by alloy scattering. The partial mobility of electrons and holes due to this scattering mechanism is estimated for n-Si{sub 1−x}Ge{sub x} and p-Si{sub 1−x}Ge{sub x} at small x. Together with this, an effect of the presence of Ge atoms upon the ionization energy of phosphorus and boron impurities is investigated. Some points related to an inhomogeneous distribution of Ge atoms in Si{sub 1−x}Ge{sub x} are discussed.

  20. GeP and (Ge{sub 1−x}Sn{sub x})(P{sub 1−y}Ge{sub y}) (x≈0.12, y≈0.05): Synthesis, structure, and properties of two-dimensional layered tetrel phosphides

    SciTech Connect (OSTI)

    Lee, Kathleen; Synnestvedt, Sarah; Bellard, Maverick; Kovnir, Kirill

    2015-04-15

    GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The layered crystal structures of these compounds were characterized by single crystal X-ray diffraction. Both phosphides crystallize in a GaTe structure type in the monoclinic space group C2/m (No. 12) with GeP: a=15.1948(7) Å, b=3.6337(2) Å, c=9.1941(4) Å, β=101.239(2)°; Ge{sub 0.93(3)}P{sub 0.95(1)}Sn{sub 0.12(3)}: a=15.284(9) Å, b=3.622(2) Å, c=9.207(5) Å, β=101.79(1)°. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Each layer is built of Ge–Ge dumbbells surrounded by a distorted antiprism of phosphorus atoms. Sn-doped GeP has a similar structural motif, but with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Graphical abstract: Layered phosphides GeP and Sn-doped GeP were synthesized from elements in bismuth and tin flux, respectively. The crystal structure of GeP consists of 2-dimensional GeP layers held together by weak electron lone pair interactions between the phosphorus atoms that confine the layer. Sn-doped GeP has a similar structural motif with a significant degree of disorder emphasized by the splitting of all atomic positions. Resistivity measurements together with quantum-chemical calculations reveal semiconducting behavior for the investigated phosphides. - Highlights: • GeP crystallizes in a layered crystal structure. • Doping of Sn into GeP causes large structural distortions. • GeP is narrow bandgap semiconductor. • Sn-doped GeP exhibits an order of magnitude higher resistivity due to disorder.

  1. The Majorana Demonstrator: Progress towards showing the feasibility of a 76Ge neutrinoless double-beta decay experiment

    SciTech Connect (OSTI)

    Finnerty, P.; Aguayo, Estanislao; Amman, M.; Avignone, Frank T.; Barabash, Alexander S.; Barton, P. J.; Beene, Jim; Bertrand, F.; Boswell, M.; Brudanin, V.; Busch, Matthew; Chan, Yuen-Dat; Christofferson, Cabot-Ann; Collar, J. I.; Combs, Dustin C.; Cooper, R. J.; Detwiler, Jason A.; Doe, P. J.; Efremenko, Yuri; Egorov, Viatcheslav; Ejiri, H.; Elliott, S. R.; Esterline, James H.; Fast, James E.; Fields, N.; Fraenkle, Florian; Galindo-Uribarri, A.; Gehman, Victor M.; Giovanetti, G. K.; Green, M.; Guiseppe, Vincente; Gusey, K.; Hallin, A. L.; Hazama, R.; Henning, Reyco; Hoppe, Eric W.; Horton, Mark; Howard, Stanley; Howe, M. A.; Johnson, R. A.; Keeter, K.; Kidd, M. F.; Knecht, A.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; LaFerriere, Brian D.; Leon, Jonathan D.; Leviner, L.; Loach, J. C.; Looker, Q.; Luke, P.; MacMullin, S.; Marino, Michael G.; Martin, R. D.; Merriman, Jason H.; Miller, M. L.; Mizouni, Leila; Nomachi, Masaharu; Orrell, John L.; Overman, Nicole R.; Perumpilly, Gopakumar; Phillips, David; Poon, Alan; Radford, D. C.; Rielage, Keith; Robertson, R. G. H.; Ronquest, M. C.; Schubert, Alexis G.; Shima, T.; Shirchenko, M.; Snavely, Kyle J.; Steele, David; Strain, J.; Timkin, V.; Tornow, Werner; Varner, R. L.; Vetter, Kai; Vorren, Kris R.; Wilkerson, J. F.; Yakushev, E.; Yaver, Harold; Young, A.; Yu, Chang-Hong; Yumatov, Vladimir

    2014-03-24

    The Majorana Demonstrator will search for the neutrinoless double-beta decay (0*) of the 76Ge isotope with a mixed array of enriched and natural germanium detectors. The observation of this rare decay would indicate the neutrino is its own anti-particle, demonstrate that lepton number is not conserved, and provide information on the absolute mass-scale of the neutrino. The Demonstrator is being assembled at the 4850 foot level of the Sanford Underground Research Facility in Lead, South Dakota. The array will be contained in a lowbackground environment and surrounded by passive and active shielding. The goals for the Demonstrator are: demonstrating a background rate less than 3 counts tonne -1 year-1 in the 4 keV region of interest (ROI) surrounding the 2039 keV 76Ge endpoint energy; establishing the technology required to build a tonne-scale germanium based double-beta decay experiment; testing the recent claim of observation of 0; and performing a direct search for lightWIMPs (3-10 GeV/c2).

  2. Pd-vacancy complex in Ge: TDPAC and ab initio study

    SciTech Connect (OSTI)

    Abiona, Adurafimihan A.; Kemp, Williams; Timmers, Heiko

    2014-02-21

    Low temperature metal-induced-crystallized germanium is a promising alternative for silicon in Complementary Metal-Oxide-Semiconductor (CMOS) technology. Palladium (Pd) is one of the metals suitable for inducing the low temperature crystallization. It is not certain, how residual Pd atoms are integrated into the Ge lattice. Therefore, time-different ?-? perturbed angular correlation (TDPAC) technique using the {sup 100}Pd(?{sup 100}Rh) nuclear probe has been applied to study the hyperfine interactions of this probe in single crystalline undoped Ge. A Pd-vacancy (Pd-V) complex with a unique interaction frequency of 8.4(2) Mrad/s has been identified. The Pd-V complex has been measured to have a maximum fraction after annealing at 350 C. Density functional theory calculations have confirmed that the Pd-V complex may have the split-vacancy configuration in Ge, in contrast to the full-vacancy configuration observed in Si.

  3. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  4. GE 超微型开关技术展示高性能

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    满足新一代4G移动设备的要求 | GE Global Research GE 超微型开关技术展示高性能 满足新一代4G移动设备的要求 Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE 超微型开关技术展示高性能 满足新一代4G移动设备的要求

  5. Natural SM-like 126 GeV Higgs boson via nondecoupling D terms

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bertuzzo, Enrico; Frugiuele, Claudia

    2016-02-16

    Accommodating both a 126 GeV mass and standard model (SM)-like couplings for the Higgs has a fine-tuning price in supersymmetric models. Examples are the minimal supersymmetric standard model, in which SM-like couplings are natural, but raising the Higgs mass to 126 GeV requires a considerable tuning, and the nonminimal supersymmetric standard model, in which the situation is reversed: the Higgs is naturally heavier, but being SM-like requires some tuning. Finally, we show that models with nondecoupling D terms alleviate this tension—a 126 GeV SM-like Higgs comes out basically with no fine-tuning cost. In addition, the analysis of the fine-tuning of the extended gaugemore » sector shows that naturalness requires the heavy gauge bosons to likely be within the reach of LHC run II.« less

  6. Electronic structural and magnetic properties of Mn{sub 5}Ge{sub 3} clusters

    SciTech Connect (OSTI)

    Yuan, H. K.; Chen, H. Kuang, A. L.; Tian, C. L.; Wang, J. Z.

    2013-11-28

    Theoretical understanding of the stability, ferromagnetism, and spin polarization of Mn{sub 5}Ge{sub 3} clusters has been performed by using the density functional theory with generalized gradient approximation for exchange and correlation. The magnetic moments and magnetic anisotropy energy (MAE) have been calculated for both bulk and clusters, and the enhanced magnetic moment as well as the enlarged MAE have been identified in clusters. The most attractive achievement is that Mn{sub 5}Ge{sub 3} clusters show a fine half-metallic character with large energy scales. The present results may have important implications for potential applications of small Mn{sub 5}Ge{sub 3} clusters as both emerging spintronics and next-generation data-storage technologies.

  7. Fermi level pinning at the Ge(001) surface—A case for non-standard explanation

    SciTech Connect (OSTI)

    Wojtaszek, Mateusz; Zuzak, Rafal; Godlewski, Szymon; Kolmer, Marek; Lis, Jakub Such, Bartosz; Szymonski, Marek

    2015-11-14

    To explore the origin of the Fermi level pinning in germanium, we investigate the Ge(001) and Ge(001):H surfaces. The absence of relevant surface states in the case of Ge(001):H should unpin the surface Fermi level. This is not observed. For samples with donors as majority dopants, the surface Fermi level appears close to the top of the valence band regardless of the surface structure. Surprisingly, for the passivated surface, it is located below the top of the valence band allowing scanning tunneling microscopy imaging within the band gap. We argue that the well known electronic mechanism behind band bending does not apply and a more complicated scenario involving ionic degrees of freedom is therefore necessary. Experimental techniques involve four point probe electric current measurements, scanning tunneling microscopy, and spectroscopy.

  8. Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

    SciTech Connect (OSTI)

    De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A.; Dalla Palma, M.; Della Mea, G.; Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V.; Lietti, D.; Berra, A.; Guffanti, G.; Prest, M.; Vallazza, E.

    2013-10-21

    Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

  9. Photoemission Study of the Rare Earth Intermetallic Compounds: RNi2Ge2 (R=Eu, Gd)

    SciTech Connect (OSTI)

    Jongik Park

    2004-12-19

    EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} are two members of the RT{sub 2}X{sub 2} (R = rare earth, T = transition metal and X = Si, Ge) family of intermetallic compounds, which has been studied since the early 1980s. These ternary rare-earth intermetallic compounds with the tetragonal ThCr{sub 2}Si{sub 2} structure are known for their wide variety of magnetic properties, Extensive studies of the RT{sub 2}X{sub 2} series can be found in Refs [ 1,2,3]. The magnetic properties of the rare-earth nickel germanides RNi{sub 2}Ge{sub 2} were recently studied in more detail [4]. The purpose of this dissertation is to investigate the electronic structure (both valence band and shallow core levels) of single crystals of EuNi{sub 2}Ge{sub 2} and GdNi{sub 2}Ge{sub 2} and to check the assumptions that the f electrons are non-interacting and, consequently, the rigid-band model for these crystals would work [11], using synchrotron radiation because, to the best of our knowledge, no photoemission measurements on those have been reported. Photoemission spectroscopy has been widely used to study the detailed electronic structure of metals and alloys, and especially angle-resolved photoemission spectroscopy (ARPES) has proven to be a powerful technique for investigating Fermi surfaces (FSs) of single-crystal compounds.

  10. New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Deputy Director, Solar Energy Technologies Office Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will

  11. Process for preparing high-transition-temperature superconductors in the Nb-Al-Ge system

    DOE Patents [OSTI]

    Giorgi, A.L.; Szklarz, E.G.

    1973-01-30

    The patent describes a process for preparing superconducting materials in the Nb-Al-Ge system having transition temperatures in excess of 19K. The process comprises premixing powdered constituents, pressing them into a plug, heating the plug to 1,450-1,800C for 30 minutes to an hour under vacuum or an inert atmosphere, and annealing at moderate temperatures for reasonably long times (approximately 50 hours). High transition-temperature superconductors, including those in the Nb3(Al,Ge) system, prepared in accordance with this process exhibit little degradation in the superconducting transition temperature on being ground to -200 mesh powder. (GRA)

  12. Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Plant | Department of Energy Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of <a href="http://edelman.com/">Edelman</a>. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image

  13. Method for preparing high transition temperature Nb/sub 3/Ge superconductors. [Patent application

    DOE Patents [OSTI]

    Newkirk, L.R.; Valencia, F.A.

    1975-06-26

    Bulk coatings of Nb/sub 3/Ge superconductors having transition temperatures in excess of 20/sup 0/K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl/sub 5/ and GeCl/sub 4/ in the presence of hydrogen. The NbCl/sub 5/ vapor may advantageously be formed quantitatively in the temperature range of about 250 to 260/sup 0/C by the chlorination of Nb metal provided the partial pressure of the product NbCl/sub 5/ vapor is maintained at or below about 0.1 atm.

  14. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Using process modeling tools to attain cost-effective results for GE customers Jimmy Lopez 2015.03.26 Sometimes, we need to look outside the box to realize the powerful tools we have inside.

  15. Effects of (Al,Ge) double doping on the thermoelectric properties of higher manganese silicides

    SciTech Connect (OSTI)

    Chen, Xi; Salta, Daniel; Zhang, Libin [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Weathers, Annie [Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Zhou, Jianshi; Goodenough, John B.; Shi, Li [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2013-11-07

    Experiments and analysis have been carried out to investigate the effects of Al and (Al,Ge) doping on the microstructure and thermoelectric properties of polycrystalline higher manganese silicide (HMS) samples, which were prepared by solid-state reaction, ball milling, and followed by spark plasma sintering. It has been found that Al doping effectively increases the hole concentration, which leads to an increase in the electrical conductivity and power factor. By introducing the second dopant Ge into Al-doped HMS, the electrical conductivity is increased, and the Seebeck coefficient is decreased as a result of further increased hole concentration. The peak power factor is found to occur at a hole concentration between 1.8??10{sup 21} and 2.2??10{sup 21}?cm{sup ?3} measured at room temperature. The (Al,Ge)-doped HMS samples show lower power factors owing to their higher hole concentrations. The mobility of Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} with y?=?0.035 varies approximately as T{sup ?3/2} above 200?K, suggesting acoustic phonon scattering is the dominant scattering mechanism. The thermal conductivity of HMS does not change appreciably by Al or (Al,Ge) doping. The maximum ZT of (Al,Ge)-doped HMS is 0.57 at 823?K, which is similar to the highest value found in the Al-doped HMS samples. The ZT values were reduced in the Mn(Al{sub 0.0035}Ge{sub y}Si{sub 0.9965-y}){sub 1.8} samples with high Ge concentration of y?=?0.025 and 0.035, because of reduced power factor. In addition, a two-band model was employed to show that the hole contribution to the thermal conductivity dominates the bipolar and electron contributions for all samples from 300 to 823?K and accounts for about 12% of the total thermal conductivity at about 800?K.

  16. Closely spaced SiGe barns as stressor structures for strain-enhancement in silicon

    SciTech Connect (OSTI)

    Hrauda, N.; Zhang, J. J.; Groiss, H.; Etzelstorfer, T.; Stangl, J.; Bauer, G.; Gerharz, J. C.; Holy, V.; Deiter, C.; Seeck, O. H.

    2013-01-21

    We present tensile and compressive strains realized within the same Si capping layer on an array of SiGe islands grown on pit-patterned (001) Si substrates. The strain distributions are obtained from synchrotron X-ray diffraction studies in combination with three-dimensional finite element calculations and simulations of the diffracted intensities. For barn-shaped islands grown at 720 Degree-Sign C with average Ge contents of 30%, the Si cap layer is misfit- and threading-dislocation free and exhibits compressive strains as high as 0.8% in positions between the islands and tensile strains of up to 1% on top of the islands.

  17. Using 3D Printing to Redesign Santa's Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using 3D Printing to Redesign Santa's Sleigh Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) Using 3D Printing to Redesign Santa's Sleigh Thomas The Elf 2013.12.03 Hello Everyone! I am so excited to be back this year to share another way GE researchers are taking part in the holiday cheer. In the past, we've utilized GE

  18. GE China Technology Center Wins Top 12 Most Innovative Practices Award of

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    "Multinational Companies in Shanghai" | GE Global Research China Technology Center Wins Top 12 Most Innovative Practices Award of "Multinational Companies in Shanghai" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window) Click to share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE China Technology Center Wins Top 12 Most Innovative Practices Award of

  19. Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DOE Office of Science (SC) Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees Community Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: Email Us More Information » 07.01.13 Two GeV Electrons Achieved

  20. Method for preparing high transition temperature Nb.sub.3 Ge superconductors

    DOE Patents [OSTI]

    Newkirk, Lawrence R.; Valencia, Flavio A.

    1977-01-01

    Bulk coatings of Nb.sub.3 Ge superconductors having transition temperatures in excess of 20 K are readily formed by a chemical vapor deposition technique involving the coreduction of NbCl.sub.5 and GeCl.sub.4 in the presence of hydrogen. The NbCl.sub.5 vapor may advantageously be formed quantitatively in the temperature range of about 250.degree. to 260.degree. C by the chlorination of Nb metal provided the partial pressure of the product NbCl.sub.5 vapor is maintained at or below about 0.1 atm.

  1. Jefferson Lab Awards $3.54 Million Contract To Pennsylvania Firm for 12 GeV

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Project | Jefferson Lab 3.54 Million Contract To Pennsylvania Firm for 12 GeV Project Jefferson Lab Awards $3.54 Million Contract To Pennsylvania Firm for 12 GeV Project NEWPORT NEWS, Va., May 1, 2009 - A Pennsylvania company has been awarded a $3.54 million contract to provide 84 klystrons to the U.S. Department of Energy's Thomas Jefferson National Accelerator Facility. The 13 kW klystrons, devices which will generate the electromagnetic fields that will accelerate the CEBAF electron

  2. Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets

    Office of Scientific and Technical Information (OSTI)

    (Conference) | SciTech Connect Conference: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeV/TeV Jets Authors: Vestrand, W. Thomas [1] + Show Author Affiliations Los Alamos National Laboratory Publication Date: 2013-08-21 OSTI Identifier: 1091318 Report Number(s): LA-UR-13-26624 DOE Contract Number: AC52-06NA25396 Resource Type: Conference Resource Relation: Conference:

  3. Straw man 900-1000 GeV crystal extraction test beam for Fermilab collider operation

    SciTech Connect (OSTI)

    Carrigan, R.A. Jr.

    1996-10-01

    A design for a 900-1000 GeV, 100 khz parasitic test beam for use during collider operations has been developed. The beam makes use of two bent crystals, one for extraction and the other one for redirecting the beam in to the present Switchyard beam system. The beam requires only a few modifications in the A0 area and largely uses existing devices. It should be straight-forward to modify one or two beam lines in the fixed target experimental areas to work above 800 GeV. Possibilities for improvements to the design,to operate at higher fluxes are discussed.

  4. Ru{sub 2}Ge{sub 3}: Crystal growth and some properties

    SciTech Connect (OSTI)

    Borshchevsky, A.; Fleurial, J.P.

    1993-10-01

    Large samples of Ru{sub 2}Ge{sub 3} were grown from Ge-rich off-stoichiometric melts at a temperature close to 1,460 C by a vertical gradient freeze method in graphite and glassy carbon crucibles. Diffusionless transition from high temperature tetragonal structure to low temperature orthorhombic structure causes twinning and crack formation. Thermal expansion coefficients of both low and high temperature phases were measured. Some electrical transport properties in the 25--1,000 C temperature range in different crystallographic directions are also described for this high temperature semiconductor. Substantial anisotropy is observed.

  5. Crystal structure and physical properties of quaternary clathrates Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x} and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}

    SciTech Connect (OSTI)

    Nasir, Navida; Grytsiv, Andriy; Melnychenko-Koblyuk, Nataliya; Rogl, Peter; Bednar, Ingeborg; Bauer, Ernst

    2010-10-15

    Three series of vacancy-free quaternary clathrates of type I, Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}, Ba{sub 8}(Zn,Cu){sub x}Ge{sub 46-x}, and Ba{sub 8}(Zn,Pd){sub x}Ge{sub 46-x}, have been prepared by reactions of elemental ingots in vacuum sealed quartz at 800 {sup o}C. In all cases cubic primitive symmetry (space group Pm3n, a{approx}1.1 nm) was confirmed for the clathrate phase by X-ray powder diffraction and X-ray single crystal analyses. The lattice parameters show a linear increase with increase in Ge for Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y}. M atoms (Zn, Pd, Cu) preferably occupy the 6d site in random mixtures. No defects were observed for the 6d site. Site preference of Ge and Si in Ba{sub 8}Zn{sub x}Ge{sub 46-x-y}Si{sub y} has been elucidated from X-ray refinement: Ge atoms linearly substitute Si in the 24k site whilst a significant deviation from linearity is observed for occupation of the 16i site. A connectivity scheme for the phase equilibria in the 'Ba{sub 8}Ge{sub 46}' corner at 800 {sup o}C has been derived and a three-dimensional isothermal section at 800 {sup o}C is presented for the Ba-Pd-Zn-Ge system. Studies of transport properties carried out for Ba{sub 8{l_brace}}Cu,Pd,Zn{r_brace}{sub x}Ge{sub 46-x} and Ba{sub 8}Zn{sub x}Si{sub y}Ge{sub 46-x-y} evidenced predominantly electrons as charge carriers and the closeness of the systems to a metal-to-insulator transition, fine-tuned by substitution and mechanical processing of starting material Ba{sub 8}Ge{sub 43}. A promising figure of merit, ZT {approx}0.45 at 750 K, has been derived for Ba{sub 8}Zn{sub 7.4}Ge{sub 19.8}Si{sub 18.8}, where pricey germanium is exchanged by reasonably cheap silicon. - Graphical abstract: Quaternary phase diagram of Ba-Pd-Zn-Ge system at 800 {sup o}C.

  6. Magnetic structure at low temperatures in FeGe{sub 2}

    SciTech Connect (OSTI)

    Babu, P. D.; Mishra, P. K.; Dube, V.; Ravikumar, G.; Mishra, R.; Sastry, P. U.

    2014-04-24

    Magnetic phase of FeGe{sub 2} intermetallic is studied using low-temperature neutron diffraction and DC magnetization. Zero-magnetic-field neutron scattering data shows the presence of an antiferromagnetic phase in the low temperature range. We find the evidence of the presence of a ferromagnetic order overriding on the predominantly antiferromagnetic phase at low temperatures.

  7. Barocaloric effect in the magnetocaloric prototype Gd5Si2Ge2

    SciTech Connect (OSTI)

    Yuce, Suheyla; Barrio, Maria; Emre, Baris; Stern-Taulats, Enric; Planes, Antoni; Tamarit, Josep-Lluis; Mudryk, Yaroslav; Gschneidner, Karl A.; Pecharsky, Vitalij K.; Manosa, Lluis

    2012-08-16

    We report on calorimetric measurements under hydrostatic pressure that enabled us to determine the barocaloric effect in Gd5Si2Ge2. The values for the entropy change for moderate pressures compare favourably to those corresponding to the magnetocaloric effect in this compound. Entropy data are complemented with direct measurements of the adiabatic pressure-induced temperature change.

  8. Details and justifications for the MAP concept specification for acceleration above 63 GeV

    SciTech Connect (OSTI)

    Berg, J. Scott

    2014-02-28

    The Muon Accelerator Program (MAP) requires a concept specification for each of the accelerator systems. The Muon accelerators will bring the beam energy from a total energy of 63 GeV to the maximum energy that will fit on the Fermilab site. Justifications and supporting references are included, providing more detail than will appear in the concept specification itself.

  9. The Case for a 500 GeV e+e- Linear Collider

    SciTech Connect (OSTI)

    Baggers, J.; Baltay, C.; Barker, T.; Barklow, T.; Bauer, U.; Bolton, T.; Brau, J.; Breidenbach, M.; Burke, D.; Burrows, P.; Dixon, L.; Fisk, H.E.; Frey, R.; Gerdes, D.; Graf, D.; Grannis, P.; Haber, H.E.; Hearty, C.; Hertzbach, S.; Heusch, C.; Hewett, J.; Hollebeek, R.; Jacobsen, R.; Jaros, J.; Kamon, T.; Karlen, D.; Koltick, D.; Kronfeld, A.; Marciano, W.; Markiewicz, T.; Murayama, H.; Nauenberg, U.; Orr, L.; Paige, F.; Para, A.; Peskin, M. E.; Porter, F.; Riles, K.; Ronan, M.; Rosenberg, L.; Schumm, B.; Stroynowski, R.; Tkaczyk, S.; Turcot, A.S.; van Bibber, K.; van Kooten, R.; Wells, J.D.; Yamamoto, H.

    2000-07-05

    Several proposals are being developed around the world for an e+e- linear collider with an initial center of mass energy of 500 GeV. In this paper, we will discuss why a project of this type deserves priority as the next major initiative in high energy physics.

  10. Atomic and electronic structure of the ferroelectric BaTiO{sub 3}/Ge(001) interface

    SciTech Connect (OSTI)

    Fredrickson, Kurt D.; Ponath, Patrick; Posadas, Agham B.; Demkov, Alexander A.; McCartney, Martha R.; Smith, David J.; Aoki, Toshihiro

    2014-06-16

    In this study, we demonstrate the epitaxial growth of BaTiO{sub 3} on Ge(001) by molecular beam epitaxy using a thin Zintl template buffer layer. A combination of density functional theory, atomic-resolution electron microscopy and in situ photoemission spectroscopy is used to investigate the electronic properties and atomic structure of the BaTiO{sub 3}/Ge interface. Aberration-corrected scanning transmission electron micrographs reveal that the Ge(001) 2??1 surface reconstruction remains intact during the subsequent BaTiO{sub 3} growth, thereby enabling a choice to be made between several theoretically predicted interface structures. The measured valence band offset of 2.7?eV matches well with the theoretical value of 2.5?eV based on the model structure for an in-plane-polarized interface. The agreement between the calculated and measured band offsets, which are highly sensitive to the detailed atomic arrangement, indicates that the most likely BaTiO{sub 3}/Ge(001) interface structure has been identified.

  11. Thermodynamic and transport properties of single crystalline RCo2Ge2 (R=Y, LaNd, SmTm)

    SciTech Connect (OSTI)

    Kong, Tai; Cunningham, Charles E.; Taufour, Valentin; Budko, Sergey L.; Buffon, Malinda L.C.; Lin, Xiao; Emmons, Heather; Canfield, Paul C.

    2014-05-01

    Single crystals of RCo2Ge2 (R=Y, LaNd, SmTm) were grown using a self-flux method and were characterized by room-temperature powder X-ray diffraction; anisotropic, temperature and field dependent magnetization; temperature and field dependent, in-plane resistivity; and specific heat measurements. In this series, the majority of the moment-bearing members order antiferromagnetically; YCo2Ge2 and LaCo2Ge2 are non-moment-bearing. Ce is trivalent in CeCo2Ge2 at high temperatures, and exhibits an enhanced electronic specific heat coefficient due to the Kondo effect at low temperatures. In addition, CeCo2Ge2 shows two low-temperature anomalies in temperature-dependent magnetization and specific heat measurements. Three members (R=TbHo) have multiple phase transitions above 1.8 K. Eu appears to be divalent with total angular momentum L =0. Both EuCo2Ge2 and GdCo2Ge2 manifest essentially isotropic paramagnetic properties consistent with J =S =7/2. Clear magnetic anisotropy for rare-earth members with finite L was observed, with ErCo2Ge2 and TmCo2Ge2 manifesting planar anisotropy and the rest members manifesting axial anisotropy. The experimentally estimated crystal electric field (CEF) parameters B 20 were calculated from the anisotropic paramagnetic ? ab and ? c values and follow a trend that agrees well with theoretical predictions. The ordering temperatures, TNTN, as well as the polycrystalline averaged paramagnetic CurieWeiss temperature, ?avg, for the heavy rare-earth members deviate from the de Gennes scaling, as the magnitude of both is the highest for Tb, which is sometimes seen for extremely axial systems. Except for SmCo2Ge2, metamagnetic transitions were observed at 1.8 K for all members that ordered antiferromagnetically.

  12. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1-x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1-x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  13. (Sr,Ba)(Si,Ge){sub 2} for thin-film solar-cell applications: First-principles study

    SciTech Connect (OSTI)

    Kumar, Mukesh E-mail: mkgarg79@gmail.com; Umezawa, Naoto; Imai, Motoharu

    2014-05-28

    In order to meet the increasing demand for electric power generation from solar energy conversion, the development of efficient light absorber materials has been awaited. To this end, the electronic and optical properties of advanced alkaline-earth-metals disilicides and digermanides (SrSi{sub 2}, BaSi{sub 2}, SrGe{sub 2}, and BaGe{sub 2}) are studied by means of the density functional theory using HSE06 exchange-correlation energy functional. Our calculations show that all these orthorhombic structured compounds have fundamental indirect band gaps in the range E{sub g} ? 0.891.25 eV, which is suitable for solar cell applications. The estimated lattice parameters and band gaps are in good agreement with experiments. Our calculations show that the electronic band structures of all four compounds are very similar except in the vicinity of the ?-point. The valence band of these compounds is made up by Si(Ge)-p states, whereas the conduction band is composed of Sr(Ba)-d states. Their band alignments are carefully determined by estimating the work function of each compound using slab model. The optical properties are discussed in terms of the complex dielectric function ?(?)?=??{sub 1}(?)?+?i?{sub 2}(?). The static and high-frequency dielectric constants are calculated, taking into account the ionic contribution. The absorption coefficient ?(?) demonstrates that a low energy dispersion of the conduction band, which results in a flat conduction band minimum, leads to large optical activity in these compounds. Therefore, alkaline-earth-metals disilicides and digermanides possess great potential as light absorbers for applications in thin-film solar cell technologies.

  14. Critical thickness for strain relaxation of Ge{sub 1−x}Sn{sub x} (x ≤ 0.17) grown by molecular beam epitaxy on Ge(001)

    SciTech Connect (OSTI)

    Wang, Wei; Zhou, Qian; Dong, Yuan; Yeo, Yee-Chia; Tok, Eng Soon

    2015-06-08

    We investigated the critical thickness (h{sub c}) for plastic relaxation of Ge{sub 1−x}Sn{sub x} grown by molecular beam epitaxy. Ge{sub 1−x}Sn{sub x} films with various Sn mole fraction x (x ≤ 0.17) and different thicknesses were grown on Ge(001). The strain relaxation of Ge{sub 1−x}Sn{sub x} films and the h{sub c} were investigated by high-resolution x-ray diffraction and reciprocal space mapping. It demonstrates that the measured h{sub c} values of Ge{sub 1−x}Sn{sub x} layers are as much as an order of magnitude larger than that predicted by the Matthews and Blakeslee (M-B) model. The People and Bean (P-B) model was also used to predict the h{sub c} values in Ge{sub 1−x}Sn{sub x}/Ge system. The measured h{sub c} values for various Sn content follow the trend, but slightly larger than that predicted by the P-B model.

  15. Measuring W photon couplings in a 500 GeV e sup + e sup - collider

    SciTech Connect (OSTI)

    Yehudai, E.

    1991-08-01

    The Standard Model gives definite predictions for the W-photon couplings. Measuring them would test an important ingredient of the model. In this work we study the capability of a 500 GeV e{sup +}e{sup {minus}} collider to measure these couplings. We study the most general C and P conserving WW{lambda} vertex. This vertex contains two free parameters, {kappa} and {lambda}. We look at three processes: e{sup +}e{sup {minus}} {yields} W{sup +}W{sup {minus}}, e{lambda} {yields} W{nu} and {lambda}{lambda} {yields} W{sup +}W{sup {minus}}. For each process we present analytical expressions of helicity amplitudes for arbitrary values of {kappa} and {lambda}. We consider three different sources for the initial photon(s). The first two are breamsstrahlung and beamstrahlung (photon radiation induced by the collective fields of the opposite bunch). Both occur naturally in the collider environment. The third is a photon beam generated by scattering low energy laser light off a high energy electron beam. We examine potential observables for each process, calculating their sensitivity to {kappa} and {lambda}, and estimating the accuracy with which they can be measured. Assuming Standard Model values are actually measured, we present the region in the {kappa}-{lambda} plane to which the W couplings can be restricted with a given confidence level. We find that combining the three processes, one can measure {kappa} and {lambda} with accuracy of 0.01--0.02.

  16. 3 GeV Booster Synchrotron Conceptual Design Report

    SciTech Connect (OSTI)

    Wiedemann, Helmut

    2009-06-02

    Synchrotron light cna be produced from a relativistic particle beam circulating in a storage ring at extremely high intensity and brilliance over a large spectral region reaching from the far infrared regime to hard x-rays. The particles, either electrons or positrons, radiate as they are deflected in the fields of the storage ring bending magnets or of magnets specially optimized for the production of synchrotron light. The synchrotron light being very intense and well collimated in the forward direction has become a major tool in a large variety of research fields in physics, chemistry, material science, biology, and medicine.

  17. Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

    SciTech Connect (OSTI)

    Yablonskiy, A. N. Baidakova, N. A. Novikov, A. V.; Lobanov, D. N.; Shaleev, M. V.

    2015-11-15

    The spectral and time characteristics of photoluminescence associated with the radiative recombination of charge carriers in SiGe/Si(001) multilayer structures with self-assembled Ge:Si islands are investigated. The time dependences of the photoluminescence of Ge:Si islands in a wide range of delay times after the pump pulse are considered at various optical-excitation levels. The photoluminescence-excitation spectra from Ge(Si) islands in the SiGe/Si(001) structures are investigated in the region of band-to-band and subband optical pumping corresponding to various time components in the photoluminescence-relaxation kinetics. A significant difference in the shape of the excitation spectra is revealed for fast (0–100 μs) and slow (100 μs–50 ms) components of the photoluminescence signal from the islands. The significant dependence of the photoluminescence-excitation spectra of Ge(Si)/Si(001) islands on the optical-pump power is shown to be associated with the prolonged diffusion of nonequilibrium charge carriers from bulk-silicon layers to Ge:Si islands at high excitation levels.

  18. Bulk and surface half-metallicity: The case of D0{sub 3}-type Mn{sub 3}Ge

    SciTech Connect (OSTI)

    Liu, Hao; Gao, G. Y. Hu, Lei; Ni, Yun; Zu, Fengxia; Zhu, Sicong; Wang, Shuling; Yao, K. L.

    2014-01-21

    Motivated by the experimental realization of D0{sub 22}-type Mn{sub 3}Ge (001) films [Kurt et al. Appl. Phys. Lett. 101, 132410 (2012)] and the structural stability of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge [Zhang et al. J. Phys.: Condens. Matter 25, 206006 (2013)], we use the first-principles calculations based on the full potential linearized augmented plane-wave method to investigate the electronic and magnetic properties of D0{sub 3}-type Heusler alloy Mn{sub 3}Ge and its (001) surface. We show that bulk D0{sub 3}-Mn{sub 3}Ge is a half-metallic ferromagnet with the minority-spin energy gap of 0.52 eV and the magnetic moment of 1.00 μ{sub B} per formula unit. The bulk half-metallicity is preserved at the pure Mn-terminated (001) surface due to the large exchange split, but the MnGe-terminated (001) surface destroys the bulk half-metallicity. We also reveal that the surface stabilities are comparable between the D0{sub 3}-Mn{sub 3}Ge (001) and the experimental D0{sub 22}-Mn{sub 3}Ge (001), which indicates the feasibility to grow the Mn{sub 3}Ge (001) films with D0{sub 3} phase other than D0{sub 22} one. The surface half-metallicity and stability make D0{sub 3}-Mn{sub 3}Ge a promising candidate for spintronic applications.

  19. Channeling, volume reflection and gamma emission using 14GeV electrons in bent silicon crystals - Oral presentation

    SciTech Connect (OSTI)

    Benson, Brandon

    2015-08-23

    High energy electrons can be deflected with very tight bending radius using a bent silicon crystal. This produces gamma radiation. As these crystals can be thin, a series of bent silicon crystals with alternating direction has the potential to produce coherent gamma radiation with reasonable energy of the driving electron beam. Such an electron crystal undulator offers the prospect for higher energy radiation at lower cost than current methods. Permanent magnetic undulators like LCLS at SLAC National Accelerator Laboratory are expensive and very large (about 100 m in case of the LCLS undulator). Silicon crystals are inexpensive and compact when compared to the large magnetic undulators. Additionally, such a high energy coherent light source could be used for probing through materials currently impenetrable by x-rays. In this work we present the experimental data and analysis of experiment T523 conducted at SLAC National Accelerator Laboratory. We collected the spectrum of gamma ray emission from 14 GeV electrons on a bent silicon crystal counting single photons. We also investigated the dynamics of electron motion in the crystal i.e. processes of channeling and volume reflection at 14 GeV, extending and building off previous work. Our single photon spectrum for the amorphous crystal orientation is consistent with bremsstrahlung radiation and the volume reflection crystal orientation shows a trend consistent with synchrotron radiation at a critical energy of 740 MeV. We observe that in these two cases the data are consistent, but we make no further claims because of statistical limitations. We also extended the known energy range of electron crystal dechanneling length and channeling efficiency to 14 GeV.

  20. Direct Evidence for Abrupt Postcrystallization Germanium Precipitation in Thin Phase-Change Films of Sb-15 at. % Ge

    SciTech Connect (OSTI)

    Cabral,C.; Krusin-Elbaum, L.; Bruley, J.; Raoux, S.; Deline, V.; Madan, A.; Pinto, T.

    2008-01-01

    We present evidence for the instability in the crystalline (metallic) state of binary Te-free phase-change Ge-Sb thin films considered for integration into nonvolatile nanosized memory cells. We find that while the amorphous (semiconducting) phase of eutectic Sb-15 at. % Ge is very robust until Sb crystallization at 240 C, at about 350 C, germanium rapidly precipitates out. Ge precipitation, visualized directly with transmission electron microscopy, is exothermic and is found to affect the films' reflectivity, resistance, and stress. It converts melting into a two-step process, which may seriously impact the switching reliability of a device.