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1

Claire Judde de Larivire, Procdures, enjeux et fonctions du testament Venise aux confins du Moyen ge et des Temps modernes. Le cas du patriciat marchand , Le Moyen  

E-Print Network (OSTI)

Moyen �ge et des Temps modernes. Le cas du patriciat marchand », Le Moyen �ge, t. 108, fasc. 3-4, 2002 testaments de patriciens marchands vénitiens vivant au début du seizième siècle, puisque ce travail s étaient consignées les listes des sociétaires participant à la gestion des galères marchandes4 . Ainsi l

Paris-Sud XI, Université de

2

XiAn Lv Jing Technology | Open Energy Information  

Open Energy Info (EERE)

XiAn Lv Jing Technology XiAn Lv Jing Technology Jump to: navigation, search Name XiAn Lv Jing Technology Place Xian, Shaanxi Province, China Sector Solar Product Xian-based solar integrated company. Coordinates 34.27301°, 108.928009° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.27301,"lon":108.928009,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

3

MHK Projects/Norde lv | Open Energy Information  

Open Energy Info (EERE)

Norde lv Norde lv < MHK Projects Jump to: navigation, search << Return to the MHK database homepage Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":5,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"500px","height":"350px","centre":false,"title":"","label":"","icon":"File:Aquamarine-marker.png","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":57.6653,"lon":11.5878,"alt":0,"address":"","icon":"http:\/\/prod-http-80-800498448.us-east-1.elb.amazonaws.com\/w\/images\/7\/74\/Aquamarine-marker.png","group":"","inlineLabel":"","visitedicon":""}]}

4

Assessment of the LV-S2 & LV-S3 Stack Sampling Probe Locations for Compliance with ANSI/HPS N13.1-1999  

SciTech Connect

This document reports on a series of tests conducted to assess the proposed air sampling locations for the Hanford Tank Waste Treatment and Immobilization Plant (WTP) Group 1-2A exhaust stacks with respect to the applicable criteria regarding the placement of an air sampling probe. The LV-C2, LV-S2, and LV-S3 exhaust stacks were tested together as a group (Test Group 1-2A). This report only covers the results of LV-S2 and LV-S3; LV-C2 will be reported on separately. Federal regulations1 require that a sampling probe be located in the exhaust stack according to the criteria established by the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-1999, Sampling and Monitoring Releases of Airborne Radioactive Substances from the Stack and Ducts of Nuclear Facilities. 2 These criteria address the capability of the sampling probe to extract a sample that represents the effluent stream.

Glissmeyer, John A.; Antonio, Ernest J.; Flaherty, Julia E.; Amidan, Brett G.

2014-09-30T23:59:59.000Z

5

Le tourisme Le tourisme  

E-Print Network (OSTI)

Le tourisme culturel occitan dansleTarn Le tourisme culturel occitan dansleTarn #12;Conception : Les étudiants de la Licence `` Tourisme & Développement `` de l'ISTHIA (promotion 2012-2013) Sous la Midi Mireia Costa-Pau Paul Barbier Tarn Tourisme : Laurent Frézouls - Grands Sites de Midi

Paris-Sud XI, Université de

6

Terahertz-Emitting Silicon-Germanium Devices Ralph T. Troeger, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, Ulrike Lehmann, and James  

E-Print Network (OSTI)

, Pengcheng Lv, Ulrike Lehmann, and James Kolodzey Department of Electrical and Computer Engineering

Kolodzey, James

7

DG Demonet Smart LV Grid (Smart Grid Project) | Open Energy Information  

Open Energy Info (EERE)

Demonet Smart LV Grid (Smart Grid Project) Demonet Smart LV Grid (Smart Grid Project) Jump to: navigation, search Project Name DG Demonet Smart LV Grid Country Austria Coordinates 47.516232°, 14.550072° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":47.516232,"lon":14.550072,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

8

Design of active loops for magnetic field mitigation in MV/LV substation surroundings  

Science Journals Connector (OSTI)

Abstract This paper deals with the application and optimization of active loops for the mitigation of the magnetic field generated by complex sources, especially MV/LV substations. Various active-loop configurations are proposed, which are analyzed in several regions located close to a particular MV/LV substation, and the optimum geometry and location of the loops are obtained together with the optimum current (magnitude and phase) to be injected into the loops. All this is performed by means of a genetic algorithm in order to reduce the average magnetic field inside the target volume (inspection volume) to the minimum. The performance of the proposed active loops is compared with that obtained via other well-known mitigation technique, such as conductive/ferromagnetic passive shields. The main results are analyzed, and the differences, in terms of performance, between the two shielding techniques, and their proper application to MV/LV substations, are highlighted.

Juan Carlos del-Pino-López; Luca Giaccone; Aldo Canova; Pedro Cruz-Romero

2015-01-01T23:59:59.000Z

9

A study of an Al-Ge3N4-Ge structure by the method of photo-capacitance-voltage characteristics  

Science Journals Connector (OSTI)

Results are reported of a study of a Ge-Ge3N4...interface by the method of capacitance-voltage characteristics, with the structure irradiated with photons of varied energy. The employed technique revealed trap le...

R. B. Dzhanelidze; M. B. Dzhanelidze; M. R. Katsiashvili

2000-10-01T23:59:59.000Z

10

Le Bail Intensity Extraction  

NLE Websites -- All DOE Office Websites (Extended Search)

Le Bail Intensity Extraction Le Bail Intensity Extraction Presentation Goal Introduce the concepts behind LeBail fitting; why it is useful and how to perform a Le Bail fit with GSAS. Format: PDF slides or a RealPlayer video of the slides with accompanying audio and a demo video that shows how a Le Bail fit is performed. Presentation Outline What is the Le Bail method? Other approaches Why use the Le Bail method? Parameter fitting with Le Bail intensity extraction Le Bail refinement strategies Avoiding problems with background fitting: BKGEDIT Demo: an example Le Bail fit Links Le Bail lecture Slides (as PDF file) FlashMovie presentation with index (best viewed with 1024x768 or better screen resolution) FlashMovie file (800x600 pixels) Le Bail demo FlashMovie presentation with index (best viewed with 1024x768 or

11

Pre-print of Chapter to appear in L.V. Shavinina (Ed). The International Handbook of Giftedness. Springer Science  

E-Print Network (OSTI)

- 1 - Pre-print of Chapter to appear in L.V. Shavinina (Ed). The International Handbook, languages, social studies etc. Yet reality does not function in this discrete manner. Although critical in-depth and ground-breaking work in optics, physics, astronomy, and theology. His book entitled

Bardsley, John

12

Building | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Scientists at GE Global Research get into the holiday spirit by bringing high-tech additive manufacturing techniques to Christmas... Read More Global Research and GE...

13

Le modle LATER Le modle LATER  

E-Print Network (OSTI)

. Décision 3. Réponse motrice En théorie, chacune de ces étapes peut produire de la variabilité. Le modèle motrice varie très peu : Le délai entre la stimulation de moto-neurones et la réponse est relativement

Madelain, Laurent

14

Distributed voltage control strategy for LV networks with inverter-interfaced generators  

Science Journals Connector (OSTI)

Abstract Low voltage distribution networks are characterized by an ever growing diffusion of single and three phase distributed generators whose unregulated operation may deplete the power quality levels, in particular as regard voltage profiles and unbalances. This issue is at present under discussion by several national and international standardization bodies and the general trend is to require, for the new connections of generators to medium and low voltage grids, their participation to the reactive power network management. In this paper a novel strategy proposes to control the network voltage unbalance suitably for coordinating single and three-phase inverter interfaced embedded generators, concurrently with a local volt/var regulation action as foreseen by the new grid connection requirements. Simulations conducted on case study network representing a typical Italian 4-wire LV distribution system under different load/generation conditions, demonstrate that the coordinated action of single-phase and three-phase inverters may considerably reduce the degree of unbalance thus improving the network power quality levels.

R. Caldon; M. Coppo; R. Turri

2014-01-01T23:59:59.000Z

15

GE Research and Development | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a decade of innovation Closing the Culture Gap Between Academia and Industry Additive Manufacturing Demonstration at GE Global Research innovate Latest News U.S....

16

Working at GE Global Research | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

> Why GE Why GE Fostering curiosity and work that makes a big impact on the world. That's how GE helps keep talented researchers motivated. Inspire For our scientists,...

17

6.3.2 Ge spinels and substituted Ge spinels  

Science Journals Connector (OSTI)

Al-Ge-Li-O: LiGeAlO4 (Sp). Co-Ga-Ge-O: Co1+xGa2-2xGexO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-xMgxGeO4 (Sp). Co-Ge-Ni-O: CoNiGeO4 (Sp). Co-Ge-O-Zn: Co2-xZnxGeO4 (Sp). Co-Ge-O: C...

D. Bonnenberg; H.P.J. Wijn

1970-01-01T23:59:59.000Z

18

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance Chevron, GE form Technology Alliance The Chevron GE Technology Alliance will develop and commercialize valuable technologies to solve critical...

19

Curing | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

this paper-based instrument, the size of a deck of playing cards, enables... Read More Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

20

GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

geglobalresearch.com Fri, 30 Jan 2015 17:46:29 +0000 en-US hourly 1 GE Researcher: Putting GE Beliefs into Action http:www.geglobalresearch.comblogcutting-edge-technology-peopl...

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

GE Healthcare Antibody Purification  

E-Print Network (OSTI)

.....................................................................................................................4 Chapter 3. Small-scale purification by affinity chromatography......................43 GeneralGE Healthcare Antibody Purification Handbook GE Healthcare imagination at work agination at work Purification Handbook Principles and Methods 18-1142-75 Isolation of mononuclear cells Methodology

Lebendiker, Mario

22

Dr. Felix Le Dantec  

Science Journals Connector (OSTI)

... Trait de Biologie,"” Le Dterniinisme biologique,"” Les Influences ancestrales,"” La Lutte universelle, “ and at least ten more!

1917-08-16T23:59:59.000Z

23

LE MAGAZINE SCIENTIFIQUE  

E-Print Network (OSTI)

PLANETSOLAR ENQU�TE EN PROFONDEUR DANS LE GULF STREAM #12;les Saisons Choeur de l'Université de Genève'Université se sont lancés dans l'étude du Gulf Stream et des aérosols. 20 REPORTAGE � LA CIOTAT Afin d ensoleillement. Le tout sans aucune émission de CO2. 26 L� O� LE GULF STREAM FAIT LE GRAND PLONGEON En plongeant

Halazonetis, Thanos

24

GE and Quirky | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a partnership that introduces a whole new way of inventing. We teamed up with Quirky, the social product development company, to give everyday inventors access to GE's patents to...

25

Powering | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers.... Read More Brilliant(tm) Wind...

26

Predix | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

developed over the last three years and was first announced publicly at GE's Minds+Machines conference in Chicago, Illinois, in October 2013. Predix enables asset and operations...

27

Site Considerations for Repowering With Advanced Circulating Pressurized Fluidized Bed Combustion (APFBC) from the L.V. Sutton Station Concept Assessment  

NLE Websites -- All DOE Office Websites (Extended Search)

Tonnemacher et al., Site Considerations for Repowering With APFBC from the L.V. Sutton Station Concept Assessment Tonnemacher et al., Site Considerations for Repowering With APFBC from the L.V. Sutton Station Concept Assessment paper 970562 Page 1 of 36 Site Considerations for Repowering with Advanced Circulating Pressurized Fluidized Bed Combustion (APFBC) from the L.V. Sutton Station Concept Assessment Gary C. Tonnemacher, P.E., and David C. Killen, P.E. Carolina Power & Light Company Raleigh, North Carolina Richard E. Weinstein, P.E., Harvey N. Goldstein, P.E., and Jay S. White Parsons Power Group Inc. Reading, Pennsylvania Robert W. Travers, P.E. U.S. Department of Energy Office of Fossil Energy / Germantown, Maryland electronic mail addresses/phone no. electronic mail addresses/phone no. Tonnemacher{ Gary.Tonnemacher@CPLC.COM 919 / 546-6091 Goldstein { Harvey_N_Goldstein@Parsons.COM

28

GE, Sandia National Lab Improve Wind Turbines | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines GE, Sandia National Lab Discover Pathway to Quieter, More Productive Wind Turbines Use of...

29

Chevron, GE form Technology Alliance  

NLE Websites -- All DOE Office Websites (Extended Search)

Chevron, GE form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE...

30

Carousolar | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Fun Carousolar Uses Solar Power for Fun This amazing all-white carousel is powered by 100 solar panels and lit up by GE's colorful TETRA Countour LED lights. You Might Also Like...

31

sciencesduvivant Le paradoxe  

E-Print Network (OSTI)

pour les plantes et les ani- maux terrestres. Les plantes et les animaux mi- croscopiques forment la phytoplancton) et d'ani- maux (le zooplancton) dont les formes sont extra- ordinairement variées. Ainsi, l

Dolan, John

32

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's

33

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

34

Saniya LeBlanc  

NLE Websites -- All DOE Office Websites (Extended Search)

Saniya LeBlanc Saniya LeBlanc Ph.D. Graduate Mechanical Engineering Stanford University This speaker was a visiting speaker who delivered a talk or talks on the date(s) shown at the links below. This speaker is not otherwise associated with Lawrence Berkeley National Laboratory, unless specifically identified as a Berkeley Lab staff member. Saniya LeBlanc recently obtained a PhD in mechanical engineering at Stanford's Nano/Microscale Heat Transfer Laboratory where she was advised by Professor Kenneth E. Goodson. Saniya's research goals are to utilize nano- and micro-structuring techniques to improve the efficiency of energy systems. In her latest project, she has developed a cost-performance metric to evaluate state-of-the-art thermoelectric power generation materials. She also characterizes the energy conversion properties of

35

Ge-Au eutectic bonding of Ge {100} single crystals  

Science Journals Connector (OSTI)

We present preliminary results on the eutectic bonding between two {100} Ge single crystal surfaces using thin films of ... Au sample show epitaxial growth of Ge. In sections of the bond, lattice continuity...

W. B. Knowlton; K. M. Itoh; J. W. Beeman; J. H. Emes…

1993-11-01T23:59:59.000Z

36

Colon Cancer Mapping | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt, GE Team Seek Deeper Understanding of Colon Cancer Vanderbilt University has partnered with GE Global...

37

1 WJL WJL 3/14/00 revised PC dimensions, requiring LV panels to go to space in a second rack REQUIRED SIGNATURES, DATE  

E-Print Network (OSTI)

1 WJL WJL 3/14/00 revised PC dimensions, requiring LV panels to go to space in a second rack INCHES ALL DIMENSIONS ARE TOFp DRAWING NUMBER REV. DATE DATE W.J. Llope 1/26/00 DRWN BY TOFp Rack NUMBER REV. DATECOGNIZANT ENG PRODUCTION APP TOFp/pVPD Rack1 Contents 5U Breaker Panel 15U SM255 Mount

Llope, William J.

38

Albert Camus et le christianisme.  

E-Print Network (OSTI)

??Pour Albert Camus le problème dominant du XXe siècle est de savoir, "si l'homme sans le secours de l'éternel ou de la pensée rationaliste peut… (more)

Reekie, Julia Lamont

2012-01-01T23:59:59.000Z

39

GE | OpenEI Community  

Open Energy Info (EERE)

by Jessi3bl(15) Member 16 December, 2012 - 19:18 GE, Clean Energy Fuels Partner to Expand Natural Gas Highway clean energy Clean Energy Fuels energy Environment Fuel GE Innovation...

40

recreate load le Rick Whitman  

E-Print Network (OSTI)

is an example of an initial unexpanded fos load le. It loads data for the le: u-init-y.cy0 u data for the le: e-init-y.cy0 2 #12;e-next-y.lod - this is an expanded fos load which uses erecreate load le Rick Whitman November 27, 1996 Usage The tool is invoked by entering recreate load

Sirianni, Marco

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Le Meridien Hyatt Hotel  

E-Print Network (OSTI)

ALLEY MEMORIAL DRIVE Shuttles to Killian Court, hotels, parking & MBTA on Commencement Day LEGEND Post-Commencement shuttle to parking, Hyatt Hotel, Residence Inn, Marriott Hotel, Kendall Hotel, and MBTA Northwest Shuttle to Commencement on Killian Court, Le Meridien Hotel, Residence Inn, Marriott Hotel, Kendall Hotel, and MBTA

Williams, Brian C.

42

Le Meridien Hyatt Hotel  

E-Print Network (OSTI)

MEMORIAL DRIVE Shuttles to Killian Court, hotels, parking & MBTA on Commencement Day LEGEND Tech Shuttle to parking, Hyatt Hotel, Residence Inn, Marriott Hotel, Kendall Hotel, and MBTA EZ Ride to Commencement on Killian Court, Le Meridien Hotel, Residence Inn, Marriott Hotel, Kendall Hotel, and MBTA SHUTTLE STOPS

Polz, Martin

43

(La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of (La0.3Ge0.7)(Ni0.85Ge0.15)2Ge2 representing the structure type (La0.30Ge0.70)(Ni0.85Ge0.15)2Ge2.

P. Villars; K. Cenzual; J. Daams…

2011-01-01T23:59:59.000Z

44

Le laser : une brve introduction  

E-Print Network (OSTI)

Le laser : une brève introduction Christian Chardonnet Directeur du Laboratoire Charles Fabry (CNRS Lasers (CNRS/Université Paris 13) Le 9 avril 2010 #12;Les sources de lumière l'ampoule électrique Les;Zoom : x1000 x1000 x1000 x1000 x100 Le spectre du soleil I.R. U.V. Comparaison du rayonnement laser et

van Tiggelen, Bart

45

Particle production models in HETC88 in the energy range 3 to 30 GeV  

SciTech Connect

HETC88 is the latest version of the high-energy transport code HETC that has been used to provide accelerator shield and calorimeter design data for many years. (See Refs. 3, 4, and 5 and the refs. given therein). This version of the code is described and results are compared with experimental data in Ref. 1. The high-energy particle production model in HETC88 is a multi-chain fragmentation model based on the work of J. Ranft and S. Ritter (see Ref. 6 and the refs. given therein). The fragmentation model used in HETC88 is described and compared with experimental data. In HETC88, the fragmentation model is used at energies {ge} 5 GeV, a scaling model is used in energy range 3 to 5 GeV, and the intranuclear cascade model is used at energies {le} 3 GeV. 10 refs., 1 fig.

Alsmiller, R.G. Jr.; Alsmiller, F.S.

1991-01-01T23:59:59.000Z

46

LE BULLETIN DE L'EPI N 56 LE CD ROM -MMOIRE LASER LE CD ROM -MMOIRE LASER  

E-Print Network (OSTI)

212 LE BULLETIN DE L'EPI N° 56 LE CD ROM - M�MOIRE LASER LE CD ROM - M�MOIRE LASER R. ALLARI Le'informations textuelles, graphiques et sonores, son ouverture à de nouvelles démarches d'accès à ces données, le CD ROM;213 R. ALLARI LE BULLETIN DE L'EPI Numérique #12;214 LE BULLETIN DE L'EPI LE CD ROM - M�MOIRE LASER

Paris-Sud XI, Université de

47

Jules Verne LE VILLAGE ARIEN  

E-Print Network (OSTI)

longue étape « Et le Congo américain, demanda Max Huber, il n'en est donc pas encore question ?... ­ � a un Congo français, un Congo belge, un Congo allemand, sans compter le Congo indépendant, et celui

HarÂ?El, Zvi

48

Natural Gas Locomotive | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

government. GE engineers are currently testing a fuel mixture that is 80% LNG, and 20% diesel using existing engine hardware. GE engineers continue to address several challenges...

49

New Medical Technology | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

of care and expanding medical treatment boundaries. Home > Innovation > Healthcare Additive Manufacturing Demonstration at GE Global Research See how GE Global Research is...

50

Hospital Sterile Processing | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Researches Use of Robots for Hospital Sterile Processing GE Researches Use of Robots for Hospital Sterile Processing GE principal investigator Lynn DeRose discusses the robotic...

51

Oil & Gas Technology Center | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Global Research Oil & Gas Technology Center GE Global Research Oil & Gas Technology Center Mark Little, SVP and chief technology officer for GE, and Eric Gebhardt, vice president...

52

GE Innovation and Manufacturing in Europe | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Wins Award 1-2-38-v-software-reliability-engineering A Stochastic Process-Based Look at Software Reliability 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

53

GE Global Research Europe, Munich, Germany | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Munich, Germany Munich, Germany With a hand in nearly all GE research fields, this center is a hub of commercial and industrial science and technology innovation. Visit the Careers...

54

4.3.2 Ge spinels and Ge spinels with substitutions  

Science Journals Connector (OSTI)

Al-Ge-Li-O-Zn: Li5Al5Zn8Ge9O36 (Sp). Al-Ge-Li-O: Li0.5+0.5xGexAl2.5-1.5xO4 (Sp). Al-Ge-O-Zn: Zn2GeO4: Al (Sp). Co-Fe-Ge-O: Co2-2xFe2xGeO4 (Sp). Co-Ge-L-Li-O: Co0.5LiGeL5O4 (Sp). Co-Ge-Mg-O: Co2-x

D. Bonnenberg; K. A. Hempel

1980-01-01T23:59:59.000Z

55

MEMS Relays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

MEMS Technology 2-1-7-v-metal-mems-devices MEMS: Inside the Global Research Cleanroom 2-3-11-v Carousolar Uses Solar Power for Fun 2-2-6-v GE Scientists Demonstrate...

56

Laser Additive Manufacturing in GE  

Science Journals Connector (OSTI)

There has been an increasing interest given to laser additive manufacturing (LAM) in recent years from across the global. GE has been one of the leading industries engaging in this...

Peng, Henry; Li, Yanmin; Guo, Rui; Wu, Zhiwei

57

GE computer move in Japan  

Science Journals Connector (OSTI)

GE computer move in Japan ... General Electric is moving ahead with plans to set up a joint computer venture in Japan with Tokyo Shibaura Electric (Toshiba) and Mitsubishi Electric. ... Later, possibly in about three years, it will manufacture in Japan. ...

1967-02-06T23:59:59.000Z

58

Minh Le | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Minh Le Minh Le About Us Minh Le - Program Manager, Solar Program Minh Le is the Program Manager of the Solar Energy Technologies Program within the Office of Energy Efficiency and Renewable Energy, where he helps manage and balance the portfolio of Research, Development, Demonstration, and Deployment programs in achieving our national SunShot goals. Prior to his current role at the Energy Department, Minh spent his career in industry developing technologies and scaling new technologies to high volume manufacturing. Minh earned his SB and SM degrees from MIT where he held fellowships by the Department of Defense, Department of Energy, and the Bose Foundation. Most Recent Help Solve Solar's Big Challenge December 2 Rooftop Solar Challenge: Empowering Innovators to Reach for the Sun

59

Le LHC, un tunnel cosmique  

ScienceCinema (OSTI)

Et si la lumière au bout du tunnel du LHC était cosmique ? En d?autres termes, qu?est-ce que le LHC peut nous apporter dans la connaissance de l?Univers ? Car la montée en énergie des accélérateurs de particules nous permet de mieux appréhender l?univers primordial, chaud et dense. Mais dans quel sens dit-on que le LHC reproduit des conditions proches du Big bang ? Quelles informations nous apporte-t-il sur le contenu de l?Univers ? La matière noire est-elle détectable au LHC ? L?énergie noire ? Pourquoi l?antimatière accumulée au CERN est-elle si rare dans l?Univers ? Et si le CERN a bâti sa réputation sur l?exploration des forces faibles et fortes qui opèrent au sein des atomes et de leurs noyaux, est-ce que le LHC peut nous apporter des informations sur la force gravitationnelle qui gouverne l?évolution cosmique ? Depuis une trentaine d?années, notre compréhension de l?univers dans ses plus grandes dimensions et l?appréhension de son comportement aux plus petites distances sont intimement liées : en quoi le LHC va-t-il tester expérimentalement cette vision unifiée ? Tout public, entrée libre / Réservations au +41 (0)22 767 76 76

None

2011-10-06T23:59:59.000Z

60

Le 24 juin 2014. cvfr Curriculum Vitae  

E-Print Network (OSTI)

persan (15 points ECTS) le 26 janvier 2008 Communication orale et ´ecrite de persan [A] (7,5 points ECTS) le 21 novembre 2008 Histoire et r´eligions persanes [A] (7,5 points ECTS) le 10 decembre 2008 Grammaire persane [A] (7,5 points ECTS) le 12 d´ecembre 2008 Textes persans [A] (7,5 points ECTS) le 9

Kiselman, Christer

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy  

SciTech Connect

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{sub 2} is explained by considering the oxygen vacancy.

Wang Shengkai [Micorowave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Liu Honggang [Microwave Devices and Integrated Circuits Department, Institute of Microelectronics, Chinese Academy of Sciences, 3 Bei-Tu-Cheng West Road, Beijing 100029 (China); Toriumi, Akira [Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); CREST, Japan Science and Technology Agency (JST), 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2012-08-06T23:59:59.000Z

62

GE PowerPoint Template  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Steels for Steels for Accident Tolera nt Fuel Cla ddings Ferritic Ma rtensitic Alloys a s Accident Tolera nt Fuel (ATF) Cla dding Ma teria l for Light Wa ter Rea ctors Ra ul B. Reba k, GE Globa l Resea rch DOE Integra tion Meeting, Sa lt La ke City 27-August-2013 DE NE 568 2 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ GE Project Tea m 3 / GE Reba k - DOE Integra tion Meeting, Sa lt La ke City, 27-August-2013/ Approa ch of GE Resea rch Proposa l * Demonstra te tha t sta inless iron ba sed bulk a lloys or Adva nced Steels ca n be used a s fuel cla dding ma teria ls in commercia l nuclea r rea ctors * The proposed ma teria l should be a s good a s Zr a lloys (or better tha n Zr a lloys) under norma l opera tion conditions 1. Resista nt to genera l corrosion a nd environmenta l cra

63

. 370. JOSEF PROKS ET JAROMIR GROH. -LE GOUT DFECTUEUX LE GOUT DFECTUEUX (GOUT HUILEUX-RANCI,  

E-Print Network (OSTI)

. 370. JOSEF PROKS ET JAROMIR GROH. - LE GOUT DÃ?FECTUEUX LE GOUT DÃ?FECTUEUX (GOUT HUILEUX-RANCI, SU

Paris-Sud XI, Université de

64

GE Teams with NY College to Pilot SOFC Technology |GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology GE - Fuel Cells to install...

65

Cs4(In0.27Ge0.73)15Ge8  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Cs8In8Ge38 representing the structure type Cs4(In0.27Ge0.73)15Ge8.

P. Villars; K. Cenzual; J. Daams…

2004-01-01T23:59:59.000Z

66

Ba6(In0.36Ge0.64)11Ge14  

Science Journals Connector (OSTI)

It contains the standardized crystallographic data set of Ba6In4Ge21 representing the structure type Ba6(In0.36Ge0.64)11Ge14.

P. Villars; K. Cenzual; J. Daams…

2005-01-01T23:59:59.000Z

67

Clean Cities: National Clean Fleets Partner: GE  

NLE Websites -- All DOE Office Websites (Extended Search)

GE to GE to someone by E-mail Share Clean Cities: National Clean Fleets Partner: GE on Facebook Tweet about Clean Cities: National Clean Fleets Partner: GE on Twitter Bookmark Clean Cities: National Clean Fleets Partner: GE on Google Bookmark Clean Cities: National Clean Fleets Partner: GE on Delicious Rank Clean Cities: National Clean Fleets Partner: GE on Digg Find More places to share Clean Cities: National Clean Fleets Partner: GE on AddThis.com... Goals & Accomplishments Partnerships National Clean Fleets Partnership National Parks Initiative Electric Vehicle Infrastructure Training Program Advanced Vehicle Technology Competitions Natural Gas Transit & School Bus Users Group Natural Gas Vehicle Technology Forum Hall of Fame Contacts National Clean Fleets Partner: GE

68

GE Energy Formerly GE Power Systems | Open Energy Information  

Open Energy Info (EERE)

GE Power Systems GE Power Systems Jump to: navigation, search Name GE Energy (Formerly GE Power Systems) Place Atlanta, Georgia Zip 30339 Sector Renewable Energy, Solar, Wind energy Product Atlanta-based supplier of power generation and energy delivery technologies in all areas of the energy industry including renewable resources such as water, wind, solar and alternative fuels. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

69

Hot Hole p-Ge Lasers and Masers for Spectroscopy of MultiQuantum-Well Heterostructures Ge/Ge1-xSix  

Science Journals Connector (OSTI)

Hot hole p-Ge masers and lasers operating in millimiter and ... of the tunable spectrometer with hote hole p-Ge emitter is demostrated by its application to ... multi-quantum-well (MQW) heterostructures (HS) Ge/Ge

V. V. Nikonorov; V. I. Gavrilenko…

1995-01-01T23:59:59.000Z

70

Transverse-momentum dependent modification of dynamic texture in central Au+Au collisions at sqrt(sNN) = 200 GeV  

SciTech Connect

Correlations in the hadron distributions produced in relativistic Au+Au collisions are studied in the discrete wavelet expansion method. The analysis is performed in the space of pseudorapidity (|{eta}| {le} 1) and azimuth (full 2{pi}) in bins of transverse momentum (p{sub t}) from 0.14 {le} p{sub t} {le} 2.1 GeV/c. In peripheral Au+Au collisions a correlation structure ascribed to minijet fragmentation is observed. It evolves with collision centrality and p{sub t} in a way not seen before which suggests strong dissipation of minijet fragmentation in the longitudinally-expanding medium.

Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kutuev, R.Kh.; et al.

2005-01-10T23:59:59.000Z

71

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

72

Technology "Relay Race" Against Cancer | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Scientists in Technology "Relay Race" Against Cancer GE Scientists in Technology "Relay Race" Against Cancer GE technologies being developed to impact every stage of cancer...

73

Le 10 avril 2014. cvfr Curriculum Vitae  

E-Print Network (OSTI)

Math´ematiques, Universit´e de Stockholm. Nomm´e le 22 d´ecembre 1966 Cours d'introduction au persan (15 points ECTS) le 26 janvier 2008 Communication orale et ´ecrite de persan [A] (7,5 points ECTS) le 21 novembre 2008 Histoire et r´eligions persanes [A] (7,5 points ECTS) le 10 decembre 2008 Grammaire

Kiselman, Christer

74

Crowdsourcing Software Award | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Unveils High-Tech Superhero, GENIUS MAN MunichinteriorV 10 Years ON: From the Lab to the Real World in 10 Years 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

75

Work and Life Balance | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Achieving worklife balance is a much-talked-about topic. According to GE Healthcare's Kelly Piacsek, "GE hires people for what's inside their head-what they know-and the specific...

76

LE DVELOPPEMENT DES ENZYMES DANS LE TUBE DIGESTIF DU JEUNE PORCELET  

E-Print Network (OSTI)

LE D�VELOPPEMENT DES ENZYMES DANS LE TUBE DIGESTIF DU JEUNE PORCELET : IMPORTANCE POUR LE SEVRAGE. - LES ENZYMES DIGESTIVES DU PORCELET. I.I. Les enzymes lipolytiques. I. I. I. La lipase chez le suivant la composition du régime. 1. 2. Les enzymes protéolytiques. 1. 2. 1. Les enzymes protéolytiques du

Boyer, Edmond

77

LE JOURNAL DE PHYSIQUE PHYSIQUE APPLIQUE  

E-Print Network (OSTI)

LE JOURNAL DE PHYSIQUE ET LE RADIUM PHYSIQUE APPLIQUéE EXEMPLES D'APPLICATIONS INDUSTRIELLES DE LA extrême; fi° le comportement physicochimique des atomes d'un même élément est, en première approximation

Boyer, Edmond

78

Hauptbewässerungs(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Hauptbewässerungs(ge)rinne f, (n) ? supply (irrigation) channel [The main channel supplying water to the irrigation area

2013-01-01T23:59:59.000Z

79

Spectrum of electron-hole states of the Si/Ge structure with Ge quantum dots  

SciTech Connect

The lateral photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots of various sizes are investigated. We observed optical transition lines between the hole levels of quantum dots and electronic states of Si. This enabled us to construct a detailed energy level diagram of the electron-hole spectrum of the Si/Ge structures. It is shown that the hole levels of Ge quantum dots are successfully described by the 'quantum box' model using the actual sizes of Ge islands. It I found that the position of the longwavelength photosensitivity boundary of Si/Ge structures with Ge quantum dots can be controlled by changing the growth parameters.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B., E-mail: igor@thermo.isp.nsc.ru [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-09-15T23:59:59.000Z

80

Quel avenir pour le sport ?  

Science Journals Connector (OSTI)

Résumé Le progrès technologique représente un moteur de développement mais, dans cette mesure même, il se lie à l’action dissolvante exercée par la technologie sur le noyau éthicopolitique du sport. Si le monde sportif ne se dote pas, dans un temps qui devient court, de moyens de protection autour d’un thème, celui des enjeux de transformation dans les rapports entre science, homme, sport et technologies, nous pourrons peut-être assister à la fin du sport de compétition, du moins tel que nous le connaissons. De quoi demain sera-t-il fait ? La mutation technologique que représente le passage aux nanosciences et nanotechnologies s’accompagnera d’un phénomène de transversalité appelé « métaconvergence », précipitant un bouleversement de la condition humaine, qui amène diverses organisations scientifiques à évoquer l’enjeu d’un homme en transition, d’un transhumanisme en quelque sorte. L’ubris désignait chez les Grecs anciens tout ce qui dépasse la mesure, mais encore faut-il être en situation de dire où se situe la limite. Jusqu’où pouvons-nous aller trop loin ? Le défi est celui de l’ubris technologique. Technological progress stands as a force for improvement, but simultaneously it can also be seen as an element that is wearing away the ethical and political core of sport. If, before a deadline that is looming ever closer, the world of sport fails to take steps to protect itself in one particular respect, that of considering what is at stake in terms of the changing relationships between science, mankind, sport and technology, then we may be seeing the end of competitive sport, at least as we know it. What will tomorrow be made of? The technological change that is coming with the move towards nanosciences and nanotechnology will bring with it a transversal phenomenon known as “metaconvergence” resulting in a revolution in the human condition that has led some scientific organisations to raise the prospect of a human being in transition, a kind of transhumanism. Hubris was the word used by the ancient Greeks for that which went too far, but one needs to be in a position to say where the limits lie. How far can we go before it becomes too far? The challenge is that of technological hubris.

J. Wauthier

2008-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Hadronization geometry and charge-dependent two-particlecorrelation on momentum subspace (eta, phi) in Au-Au collisions atsqrt(sNN) = 130 GeV  

SciTech Connect

We present the first measurements of charge-dependent two-particle correlations on momentum-space difference variables {eta}{sub 1}-{eta}{sub 2} (pseudorapidity) and {phi}{sub 1}-{phi}{sub 2} (azimuth) for primary charged hadrons with transverse momentum 0.15 {le} p{sub t} {le} 2 GeV/c and |{eta}| {le} 1.3 from Au-Au collisions at {radical}s{sub NN} = 130 GeV. We observe correlation structures not predicted by theory but consistent with evolution of hadron emission geometry with increasing centrality from one-dimensional fragmentation of color strings to higher-dimensional fragmentation of a hadron-opaque bulk medium.

Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson,B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski,J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar,A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de laBarca Sanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopdhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; De Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip,P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Guiterrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry,T.W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann,G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones,P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrv,V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov,A.I.; et al.

2004-09-23T23:59:59.000Z

82

GE Appliances and Lighting Home Energy Solutions  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances and Lighting GE Appliances and Lighting Home Energy Solutions Introduction to Devices with Brillion(tm) Technology Portfolio of Products 3 GE Appliances and Lighting All Rights Reserved Brillion(tm) Suite of Home Energy Solutions Nucleus(tm) Smart Meter Other Devices Internet IHD Other Devices PCT Non-Meter Solution GE DRMS GEA Server 4 GE Appliances and Lighting All Rights Reserved Nucleus(tm) energy manager with Brillion(tm) technology Consumers can reduce electric usage by an average of 5% per year. 5 GE Appliances and Lighting All Rights Reserved GE Profile Appliances enabled with Brillion(tm) technology Delayed defrost during peak Delayed starts and temperature adjustments during peak Delayed start until off- peak Reduced energy usage 60%, DR- enabled Reduced wattage during peak When coupled with the Nucleus and a TOU

83

La quête du bonheur en France au 18e siècle : le bonheur individuel et le bonheur collectif dans le roman utopique, libertin et sentimental  

E-Print Network (OSTI)

Cette thèse se propose d'examiner le concept du bonheur qui semble être devenu une préoccupation majeure au XVIIIe siècle en France. Or, si le bonheur individuel et le bonheur collectif sont tous deux recherchés, ils ne ...

Fernandez-Nurdin, Delphine Isabelle

2009-06-15T23:59:59.000Z

84

Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix  

SciTech Connect

Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

2011-07-15T23:59:59.000Z

85

Tracey LeBeau | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tracey LeBeau Tracey LeBeau About Us Tracey LeBeau - Director, Office of Indian Energy Policy and Programs Tracey LeBeau Tracey A. LeBeau (Cheyenne River Sioux) is Director for the U.S. Department of Energy's Office of Indian Energy Policy and Programs. She was appointed in January 2011 to establish this new Office which is authorized by statute to manage, coordinate, create and facilitate programs and initiatives to encourage tribal energy and energy infrastructure development. Administratively, the Office was established to also coordinate, across the Department, those policies, programs and initiatives involving Indian energy and energy infrastructure development. Ms. LeBeau has over 15 years of energy investment, start up and energy development experience. She has served in executive capacities for numerous

86

Ge atom distribution in buried dome islands  

SciTech Connect

Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {l_brace}113{r_brace} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.

Portavoce, A.; Berbezier, I.; Ronda, A.; Mangelinck, D. [CNRS, IM2NP, Case 142, 13397 Marseille Cedex 20 (France); Hoummada, K. [Aix-Marseille Universite, IM2NP, Case 142, 13397 Marseille Cedex 20 (France)

2012-04-16T23:59:59.000Z

87

Structural and Magnetothermal Properties of Compounds: Yb5SixGe4-x,Sm5SixGe4-x, EuO, and Eu3O4  

SciTech Connect

The family of R{sub 5}Si{sub x}Ge{sub 4-x} alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R{sub 5}Si{sub x}Ge{sub 4-x} systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R{sub 5}Si{sub x}Ge{sub 4-x} systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb{sub 5}Si{sub x}Ge{sub 4-x} and Sm{sub 5}Si{sub x}Ge{sub 4-x} pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys with 0 {le} x {le} 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R{sub 5}Si{sub x}Ge{sub 4-x} systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd{sub 5}Si{sub 4}-type structure. The magnetic properties of Yb{sub 5}Si{sub x}Ge{sub 4-x} materials are nearly composition-independent, reflecting the persistence of the same crystal structure over the whole range of x from 0 to 4. Both the crystallographic and magnetic property data indicate that Yb{sub 5}Si{sub x}Ge{sub 4-x} alloys are mixed valence systems, in which the majority (60%) of Yb atoms is divalent, while the minority (40%) is trivalent. This finding is supported by recent Moessbauer spectroscopy data.

Kyunghan Ahn

2007-05-09T23:59:59.000Z

88

Le logiciel "Tigre" en formation PLC 1 Grtice J. Vincent Le logiciel Tigre en formation PLC  

E-Print Network (OSTI)

"Tigre" en formation PLC 1 Grétice J. Vincent Le logiciel « Tigre » en formation PLC J. Vincent Le;______________________________________________________________________________________ Le logiciel "Tigre" en formation PLC 2 Grétice J. Vincent 1.1. La lecture Voici l'écran d;______________________________________________________________________________________ Le logiciel "Tigre" en formation PLC 3 Grétice J. Vincent Figure 3 1.2. La démonstration Voici l

Paris-Sud XI, Université de

89

membrane-ge | netl.doe.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

High-Performance Thin Film Composite Hollow Fiber Membranes for Post-Combustion Carbon Dioxide Capture Project No.: DE-FE0007514 GE Global Research is developing high...

90

Robotic Wind Turbine Inspection | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Trials GE Global Research is advancing technology that will make the inspection of wind turbines faster and more reliable for customers. Currently, an inspector examines the...

91

Advanced Propulsion Systems | GE Global Research  

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primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing ...

92

One Young World Summit |GE Global Research  

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photo of Valentina Bisio. About the Author Valentina Bisio EEDP Graduate GE O&G - Turbomachinery Solutions Valentina is an EEDP graduate. She completed job rotations in TMS...

93

Nanoscale Material Properties | GE Global Research  

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Nanotechnology Drives New Levels of Performance Nanotechnology Drives New Levels of Performance GE scientists are discovering new material properties at the nanoscale that drive...

94

Happy Pi Day! | GE Global Research  

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is an area where GE researchers are intensifying their efforts. 3-D printing, an area of additive manufacturing, is providing new manufacturing freedom that was not possible with...

95

Patricia C. Irwin | Inventors | GE Global Research  

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50 years as they seem now." -Patricia Irwin Creating a nonradioactive tracer for use in nuclear turbine testing. Re-establishing the dielectrics team to support GE businesses....

96

Ge/SiGe quantum well devices for light modulation, detection, and emission.  

E-Print Network (OSTI)

??This PhD thesis is devoted to study electro-optic properties of Gemanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells (MQWs) for light modulation, detection, and emission on Si platform.… (more)

Chaisakul, Papichaya

2012-01-01T23:59:59.000Z

97

Ge–Si–O phase separation and Ge nanocrystal growth in  

Science Journals Connector (OSTI)

Ge:SiOx/SiO2 multilayers are fabricated using a new reactive dc magnetron sputtering approach. The influence of the multilayer stoichiometry on the ternary Ge–Si–O phase separation and the subsequent size-controlled Ge nanocrystal formation is explored by means of x-ray absorption spectroscopy, x-ray diffraction, electron microscopy and Raman spectroscopy. The ternary system Ge–Si–O reveals complete Ge–O phase separation at 400?°C which does not differ significantly to the binary Ge–O system. Ge nanocrystals of 2 is present after annealing. Thus, the Ge nanocrystals become completely embedded in a stoichiometric silica matrix favouring the use for photovoltaic applications.

Manuel Zschintzsch; Christoph J Sahle; Johannes von Borany; Christian Sternemann; Arndt Mücklich; Alexander Nyrow; Alexander Schwamberger; Metin Tolan

2011-01-01T23:59:59.000Z

98

Hot Hole Effects in Strained Mqw Heterostructures Ge/Ge1?xSix  

Science Journals Connector (OSTI)

The paper deals with the first investigations of the 2D hot hole effects in multilayer heterostructures Ge/Ge1?xSix...aimed at the realization of dynamical heating and intraband population inversion of carriers i...

V. Ya. Aleshkin; A. A. Andronov; N. A. Bekin…

1996-01-01T23:59:59.000Z

99

Surface Properties and Collective Modes of Electron-Hole Droplets in Ge, Si and Strained Ge  

Science Journals Connector (OSTI)

The surface structure, surface energy, and dipole barrier are obtained for condensed electron-hole droplets in Ge, Si, and strained Ge at zero temperature. The surface tension is...

T. L. Reinecke; F. Crowne; S. C. Ying

1974-01-01T23:59:59.000Z

100

Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors  

SciTech Connect

Combining two indirect-gap materials - with different electronic and optical gaps - to create a direct gap material represents an ongoing theoretical challenge with potentially rewarding practical implications, such as optoelectronics integration on a single wafer. We provide an unexpected solution to this classic problem, by spatially melding two indirect-gap materials (Si and Ge) into one strongly dipole-allowed direct-gap material. We leverage a combination of genetic algorithms with a pseudopotential Hamiltonian to search through the astronomic number of variants of Si{sub n}/Ge{sub m}/.../Si{sub p}/Ge{sub q} superstructures grown on (001) Si{sub 1-x}Ge{sub x}. The search reveals a robust configurational motif - SiGe{sub 2}Si{sub 2}Ge{sub 2}SiGe{sub n} on (001) Si{sub x}Ge{sub 1-x} substrate (x {le} 0.4) presenting a direct and dipole-allowed gap resulting from an enhanced {Gamma}-X coupling at the band edges.

d'Avezac, M.; Luo, J. W.; Chanier, T.; Zunger, A.

2012-01-13T23:59:59.000Z

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

GE Turbine Parts www.edisonmachine.com  

E-Print Network (OSTI)

vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from get swanky with the Equus Bass770 Zenos reveals details of the E10 roadster The Toyota FCV fuel cellGE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars

Chiao, Jung-Chih

102

Modeling of GE Appliances: Final Presentation  

SciTech Connect

This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

2013-01-31T23:59:59.000Z

103

Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals  

SciTech Connect

Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

104

Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals  

SciTech Connect

Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

Itoh, K.

1992-10-01T23:59:59.000Z

105

Pseudomorphic GeSn/Ge(001) quantum wells: Examining indirect band gap bowing  

SciTech Connect

A study of the bandgap character of compressively strained GeSn{sub 0.060-0.091}/Ge(001) quantum wells grown by molecular beam epitaxy is reported. The built-in strain in GeSn wells leads to an increased separation between L and {Gamma} conduction band minima. The prevalent indirect interband transitions in GeSn were probed by photoluminescence spectroscopy. As a result we could simulate the L-valley bowing parameter in GeSn alloys, b{sub L} = 0.80 {+-} 0.06 eV at 10 K. From this we conclude that even compressively strained GeSn/Ge(001) alloys could become direct band gap semiconductors at the Sn-fraction higher than 17.0 at. %.

Tonkikh, Alexander A. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Institute for Physics of Microstructures RAS, GSP-105, Nizhniy Novgorod (Russian Federation); Eisenschmidt, Christian; Schmidt, Georg [Institute of Physics, Martin Luther University Halle-Wittenberg, Von-Danckelmann-Platz 3 D-01620, Halle (Saale) (Germany); Talalaev, Vadim G. [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany); Zakharov, Nikolay D.; Werner, Peter [Max Planck Institute of Microstructure Physics, Weinberg 2 D-06120, Halle (Saale) (Germany); Schilling, Joerg [ZIK SiLi-Nano, Martin Luther University Halle-Wittenberg, Karl-Freiherr-von-Fritsch-Str. 3 D-06120, Halle (Saale) (Germany)

2013-07-15T23:59:59.000Z

106

Ge-on-Si laser for silicon photonics  

E-Print Network (OSTI)

Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

Camacho-Aguilera, Rodolfo Ernesto

2013-01-01T23:59:59.000Z

107

Science as Art: Jet Engine Airflow | GE Global Research  

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used heavily by GE Aviation, GE Power & Water, and GE Oil & Gas for the design of turbomachinery, e.g. jet engines, gas turbines, etc. I had the chance to talk with Brian to...

108

On peut donc conclure avec certitude que le polo-nium, le thorium, l'actinium ou leurs drivs, mettent  

E-Print Network (OSTI)

783 On peut donc conclure avec certitude que le polo- nium, le thorium, l'actinium ou leurs dérivés

Boyer, Edmond

109

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure  

SciTech Connect

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2013-08-19T23:59:59.000Z

110

Engineer Receives UMass "Salute To Service" Award | GE Global...  

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GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award GE Engineer Honored by Alma Mater With Prestigious UMass "Salute To Service" Award Dr. Marshall...

111

la solubilit des trois matires. le radium B tant le plus positif et le radium A le plus ngatif des trois  

E-Print Network (OSTI)

négatif des trois éléments. En outre la plus grande solubilité du ra- dium A dans les liquides organiques surtout dans le sulfure de carbone, le place facilement dans le groupe du soufra. La règle précédente est l'exa- l1len du dépôt. 2° Si ["activi!é induite s'cst déposée sur du verre comme radium A, ce n

Boyer, Edmond

112

Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers  

SciTech Connect

Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-21T23:59:59.000Z

113

Das Mischungsverhalten von Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge  

Science Journals Connector (OSTI)

Mittels homogenisierter Sinter-und Schmelzproben wird die Bildung von lückenlosen Mischreihen zwischen Nb3Sn mit Mo3Si, Mo3Ge und Nb3Ge nachgewiesen.

H. Holleck; F. Benesovsky; H. Nowotny

1962-01-01T23:59:59.000Z

114

Minijet Deformation and Charge-independent Two-particleCorrelations on Momentum Subspace (eta,phi) In Au-Au Collisions atsqrt(sNN) = 130 GeV  

SciTech Connect

We present first measurements of charge-independent correlations on momentum-space difference variables {eta}{sub 1}-{eta}{sub 2} (pseudorapidity) and {phi}{sub 1}-{phi}{sub 2} (azimuth) for charged primary hadrons with transverse momentum within 0.15 {le} p{sub t} {le} 2 GeV/c and |{eta}| {le} 1.3 from Au-Au collisions at {radical}s{sub NN} = 130 GeV. We observe strong charge-independent correlations associated with minijets and elliptic flow. The width of the minijet peak on {eta}{sub 1}-{eta}{sub 2} increases by a factor 2.3 from peripheral to central collisions, suggesting strong coupling of partons to a longitudinally-expanding colored medium. New methods of jet analysis introduced here reveal nonperturbative medium effects in heavy ion collisions.

Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson,B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski,J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth,C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la BarcaSanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip,P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry,T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann,G.W.; Horsley, M.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein,S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda,L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; et al.

2004-11-04T23:59:59.000Z

115

GE_Order_and_Compromise_Agreement.pdf  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances, a Division of GE Appliances, a Division of General Electric Company, Respondent ) ) ) ) ) ) ORDER By the General Counsel, U.S. Department of Energy: Case Number: 2012-SE-1403 1. In this Order, I adopt the attached Compromise Agreement entered into between the U.S. Department of Energy ("DOE") and GE Appliances, a Division of General Electric Company ("Respondent"). The Compromise Agreement resolves the case initiated after DOE was informed, based on test results made available as a result of verification testing by the Association of Home Appliance Manufacturers ("AHAM"), that aGE refrigerator basic model may not meet the energy conservation standard set forth in 10 C.F.R. § 430.32(a). 2. DOE and Respondent have negotiated the terms of the Compromise Agreement that

116

12 GeV Upgrade | Jefferson Lab  

NLE Websites -- All DOE Office Websites

Science Science A Schematic of the 12 GeV Upgrade The 12 GeV Upgrade will greatly expand the research capabilities of Jefferson Lab, adding a fourth experimental hall, upgrading existing halls and doubling the power of the lab's accelerator. A D D I T I O N A L L I N K S: 12 GeV Home Public Interest Scientific Opportunities Hall D Status Updates Contacts Three-Year Accelerator Schedule 2014 - 2016 top-right bottom-left-corner bottom-right-corner 12 GeV Upgrade Physicists at Jefferson Lab are trying to find answers to some of nature's most perplexing questions about the universe by exploring the nucleus of the atom. Their goal is to answer such questions as: "What is the universe made of?" and "What holds everyday matter together?" In their search for answers, physicists smash electrons into atoms using

117

Working in the Cleanroom | GE Global Research  

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The Dirt on the Cleanroom The Dirt on the Cleanroom In this short video, take a look inside the GE Global Research cleanroom and meet the team working in this 28,000-square-foot...

118

Metal MEMS Devices | GE Global Research  

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MEMS: Inside the Global Research Cleanroom MEMS: Inside the Global Research Cleanroom This follow-up to our introduction to MEMS takes you inside the GE Global Research cleanroom...

119

Adam Rasheed | Inventors | GE Global Research  

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A GE-NASA effort that developed the world's first and largest multi-tube pulse detonation engine that fires into a large-scale turbine-along with its deafening whine and...

120

Air Traffic Operations | GE Global Research  

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Manufacturing in Europe LucasMaltaairplaneV Green Skies of Brazil 2-7-7-v-laser-additive-manufacturing Revolutionizing the Age-Old Rules of Manufacturing 3-4-4-v GE...

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

MEXICO: GE Lets Mexicans Buy In  

Science Journals Connector (OSTI)

MEXICO: GE Lets Mexicans Buy In ... General Electric de Mexico, the country's biggest manufacturer of electrical products, had been one of the major Mexican firms still wholly owned by a foreign parent. ...

1968-07-15T23:59:59.000Z

122

Andrew Gorton | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

"My goal is to make the world a better place by reducing the amount of water used during hydraulic fracturing, as well as continue to make GE products quieter, thereby reducing...

123

GE's Christine Furstoss Named to NACIE  

NLE Websites -- All DOE Office Websites (Extended Search)

companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

124

Jie Shen | Inventors | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Power Conversion in developing the novel medium-voltage drive MV6 series, from NTI (new technology introduction) to NPI (new product introduction) to product release and to...

125

Mess(ge)rinne f, (n)  

Science Journals Connector (OSTI)

Mess(ge)rinne f, (n), Messkanal m ? flume, sluice, measuring flume, measuring sluice, meter flume, measurement flume, launder, measurement sluice, meter sluice [A channel in which water i...

2013-01-01T23:59:59.000Z

126

Institut de recherche pour le dveloppement  

E-Print Network (OSTI)

participation en France métropolitaine, dans les ROM-COM et à l'étranger, à la formation de cadres scientifiques dans les ROM- COM, le

127

Event-by-event hexb pt hexb fluctuations in Au-Au collisions atsqrt(sNN) = 130 GeV  

SciTech Connect

We present the first large-acceptance measurement of event-wise fluctuations in Au-Au collisions at {radical}s{sub NN} = 130 GeV. Significant nonstatistical fluctuations are observed. The measured fractional r.m.s. width excess of the event-wise distribution for the 15% most-central events for charged hadrons within |{eta}| < 1 and 0.15 {le} p{sub t} {le} 2 GeV/c is 13.7 {+-} 0.1(stat) {+-}1.3(syst)% relative to a statistical reference. The variation of charge-independent fluctuation excess with centrality is non-monotonic but smooth. Charge-dependent nonstatistical fluctuations are also observed.

Adams, J.; Adler, C.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Anderson, M; Arkhipkin, D.; Averichev, G.S.; Badyal,S.K.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele,S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bhardwaj,S.; Bhaskar, P.; Bhati, A.K.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar,A.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez,M.; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Chernenko, S.P.; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Majumdar, M.R.; Eckardt, V.; Efimov,L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, K.J.; Fu, J.; Gagliardi, C.A.; Ganti, M.S.; Gutierrez, T.D.; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grigoriev, V.; Cronstal, S.; Grosnick, D.; Guedon, M.; Guertin, S.M.; Gupta, A.; Gushin, E.; Hallman, T.J.; Hardtke, D.; Harris,J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Horsley, M.; Huang, H.Z.; Huang,S.L.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Johnson, I.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Konstantinov, A.S.; Kopytine,S.M.; Kotchenda, L.; Kovalenko, A.D.; Kramer, M.; Kravtsov, P.; Krueger,K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; et al.

2003-09-02T23:59:59.000Z

128

GE Scientists Source Best Ideas at hackMIT | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

the Manufacturing Platform DirectWriteV Building More Intelligent GE Products with Additive Manufacturing MEMSVertical Next-gen RF MEMS Switch for a Smarter, Faster...

129

GE partners with Matthew Dear to create "Drop Science" | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Create "Drop Science" GE Partners with Matthew Dear to Create "Drop Science" Every machine has its own acoustic signature - a precise frequency that indicates whether that...

130

GE Opens New Global R&D Center in Brazil - GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Center to focus on subsea oil and gas research, capitalizing on 1.2 trillion offshore market opportunity Site will include "Crotonville" GE leadership facility to help...

131

Effet de l'insuline sur le transport des acides amins et la synthse protique dans le muscle squelettique  

E-Print Network (OSTI)

squelettique de la souris normale et de la souris insulinorésistante Yannick LE MARCHAND-BRUSTEL Solange MONIER synthétase (Le Marchand-Brustel, Jeanrenaud et Freychet, 1978 ; Le Marchand-Brustel et Freychet, 1980 albinos par injection intra-péritonéale d'aurothio- glucose (goldthioglucose, GTG) (Le Marchand, Freychet

Boyer, Edmond

132

Article original Diffrenciation par le systme API 50 CH  

E-Print Network (OSTI)

Article original Différenciation par le système API 50 CH et électrophorèse des mycoplasmes Marcy-l'Ã?toile, France (Reçu le 15 janvier 1991; accepté le 11 juin 1991) Résumé ― Le système API'aspect des colonies lors de l'isolement, ainsi que les résultats fournis par le système API 50 CH ont permis

Paris-Sud XI, Université de

133

Relaxation and recombination processes in Ge/SiGe multiple quantum wells  

SciTech Connect

The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

2013-12-04T23:59:59.000Z

134

Effets du ranélate de strontium, un traitement anti-ostéoporotique, sur le minéral osseux.  

E-Print Network (OSTI)

??Le ranélate de strontium, prescrit dans le traitement de l'ostéoporose ménopausique, possède 2 atomes de strontium stable pouvant se fixer au minéral osseux. Le strontium… (more)

Doublier, Audrey

2011-01-01T23:59:59.000Z

135

Kohlenstoffhaltige ternäre Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C)  

Science Journals Connector (OSTI)

Die ternären Phasen V2GeC, Cr2GaC und Cr2GeC werden aus den Komponenten hergestellt und als H-Phasen identifiziert. Ferner dürften auch die H-Phasen Ti2GaC, und Ti2GeC existieren. In gleicher Weise hergestellte L...

W. Jeitschko; H. Nowotny; F. Benesovsky

1963-01-01T23:59:59.000Z

136

Influence of C on Ge incorporation in the growth of Ge-rich Ge1?x?ySixCy alloys on Si (100)  

Science Journals Connector (OSTI)

Ge-rich Ge1?x?ySixCy...alloys have been grown on Si (100) substrates by plasma-enhanced rapid thermal chemical vapor deposition. It is found that there is a strong suppressive effect of C on the Ge composition an...

X.B. Liu; L. Zang; S.M. Zhu; X.M. Cheng; P. Han; Z.Y. Luo; Y.D. Zheng

2000-04-01T23:59:59.000Z

137

New York–Presbyterian and GE  

Science Journals Connector (OSTI)

...originate. Our collaboration with GE Medical Systems is based on having access to business skills and cutting-edge equipment that, in our judgment, will benefit our patients and increase our ability to provide cost-effective, high-quality care. We purchase from GE only technology that the hospital deems... To the Editor: In his Perspective article, Dr. Garber (Oct. 14 issue)1 appropriately alerts us to the potential for conflicts of interest when an academic medical center forms a relationship with a business company. New York–Presbyterian Hospital is very ...

2005-02-03T23:59:59.000Z

138

Soit le fichier mon-emploi-du-temps.xml suivant :  

E-Print Network (OSTI)

TD : XSL Exercice 1 Soit le fichier mon-emploi-du-temps.xml suivant : ISO" type="TP"/> TP"/> TP"/> Créez un premier modèle permettant d

Belaïd, Abdel

139

GE Hitachi Nuclear Energy | Open Energy Information  

Open Energy Info (EERE)

GE Hitachi Nuclear Energy GE Hitachi Nuclear Energy Jump to: navigation, search Name GE Hitachi Nuclear Energy Place Wilmington, North Carolina Zip 28402 Sector Efficiency, Services Product GE Hitachi Nuclear Energy develops advanced light water reactors and offers products and services used by operators of boiling water reactor (BWR) nuclear power plants to improve efficiency and boost output. Coordinates 42.866922°, -72.868494° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.866922,"lon":-72.868494,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

140

Viscosity Measurement G.E. Leblanc  

E-Print Network (OSTI)

30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

Kostic, Milivoje M.

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
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141

STATEMENT OF CONSIDERATIONS REQUEST BY GE CORPORATE RESEARCH & DEVELOPMENT (GE-CRD)  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) CORPORATE RESEARCH & DEVELOPMENT (GE-CRD) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN PATENT RIGHTS UNDER DOE COOPERATIVE AGREEMENT NO. DE-FC07- 96ID13406; W(A)-96-004; CH-0894 The Petitioner, GE Corporate Research & Development (GE-CRD) has requested a waiver of domestic and foreign patent rights for all subject inventions arising from its participation under the above referenced cooperative agreement entitled "Electric Vehicle Program - Ultracapacitor/Battery Electronic Interface Project." The objective of the cooperative agreement is to develop prototype electronic interface hardware to verify the design of the power electronics and basic control strategy for an advanced electric vehicle drive line that uses ultracapacitors to load level the main storage battery. The

142

Defect luminescence in films containing Ge and GeO{sub 2} nanocrystals  

SciTech Connect

Amorphous SiO{sub x} alloys containing Ge or GeO{sub 2} nanocrystals are produced by dc-magnetron sputtering and controlled crystallization. The samples are investigated by Raman scattering, transmission electron microscopy, photoluminescence and excitation spectroscopy. Under UV excitation, both types of films luminesce around 3.1 eV, with identical PL line shapes and subnanosecond PL dynamics. The strongest PL intensity is found for the films containing FeO{sub 2} crystals and for the largest nanocrystals. These results are a clear indication that although the blue luminescence is without a doubt correlated with the formation of Ge (or GeO{sub 2}) nanocrystals, it is not produced by the radiative recombination of excitons confined in the nanocrystals. Possible mechanisms for the luminescence are discussed, including defects at the nanocrystal/matric interface or in the matrix itself.

Zacharias, M.; Atherton, S.J.; Fauchet, P.M.

1997-07-01T23:59:59.000Z

143

LE JOURNAL DE PHYSIQUE Short Communication  

E-Print Network (OSTI)

2307 LE JOURNAL DE PHYSIQUE Short Communication Cold fusion in a dense electron gas R. Balian, J in metallic palladiun are required in order to bring the cold fusion rate to an observable value. 'Ibme 50 N are known to yield observable rates for "cold fusion" in ddp-molecules [1-3]. One may also notice

Boyer, Edmond

144

Service des finances Le saviez-vous ?  

E-Print Network (OSTI)

. La certification ISO 9001 atteste qu'une organisation a développé des pratiques de gestion qui responsable Penser autrement, acheter mieux ! L' Organisation internationale de normalisation (ISO) a publié durable dans une organisation : ISO 26 000 Responsabilité sociétale. Une organisation engagée envers le

145

Le microscope des mathmaticiens Tribune du Net  

E-Print Network (OSTI)

cette "tribune" Interactif ! Deux parties : 1 les TIC du chercheur TIC = Technologies de l'Information et de la Communication #12;Contenu de cette "tribune" Interactif ! Deux parties : 1 les TIC du chercheur TIC = Technologies de l'Information et de la Communication 2 ordinateur : le microscope des

Theyssier, Guillaume

146

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Colozza, A.J. [NYMA Setar Inc., Brookpark, OH (United States); Brinker, D.J.; Bents, D.J. [National Aeronautics and Space Administration, Cleveland, OH (United States). Lewis Research Center

1994-12-31T23:59:59.000Z

147

Design of a GaAs/Ge solar array for unmanned aerial vehicles  

SciTech Connect

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

1995-03-01T23:59:59.000Z

148

Le equazioni di Lagrange 1.1 Introduzione  

E-Print Network (OSTI)

Capitolo 1 Le equazioni di Lagrange 1.1 Introduzione Le equazioni di Lagrange (Parigi, 1787)1 e le francese) che pass`o la seconda parte della sua vita a Parigi (che allora era forse il pi`u grande centro

Carati, Andrea

149

LE JOURNAL DE PHYSIQUE THORIE DU TRANAGE MAGNTIQUE DE DIFFUSION  

E-Print Network (OSTI)

LE JOURNAL DE PHYSIQUE ET LE RADIUM TH�ORIE DU TRA�NAGE MAGN�TIQUE DE DIFFUSION Par M. LOUIS N�EL. Laboratoire d'�lectrostatique et de Physique du Métal, Grenoble. Sommaire. - Après avoir rappelé l LE JOURNAL DE PHYSIQUE ILT

Boyer, Edmond

150

Science du sol Le phosphore assimilable des sols : sa reprsentation  

E-Print Network (OSTI)

Science du sol Le phosphore assimilable des sols : sa représentation par un modèle fonctionnel à'échange isotopique des ions phosphate permet de démon- trer que le phosphore (P) biodisponible des sols est un des fertilisations excédentaires de phosphore modifient tous les compartiments. Cette représentation

Boyer, Edmond

151

Institut National Polytechnique de Grenoble pour obtenir le grade de  

E-Print Network (OSTI)

publiquement par Franck ROUSSEAU le 21 janvier 1999 Pr esentations Multim edia Synchronis ees pour le WWW . . . . . . . . . . . . . . . . . . . . 19 2 Le multim edia 21 2.1 Applications et syst#12;emes multim edia . . . . . . . . . . . . . . 21 2 . . . . . . . . . . . . . . . . . . . 26 2.1.3 Anatomie des syst#12;emes multim edia modernes . . . . . 27 2.1.4 Conclusion

Paris-Sud XI, Université de

152

Silicon Carbides in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Clean Room: Silicon Carbides GE Global Research is working on nanoscale silicon carbide devices. Find out what we're doing. You Might Also Like 2-1-10-v-working-at-ge-resear...

153

The Majorana Ge-76 double-beta decay project  

SciTech Connect

The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

Avignone, Frank Titus [ORNL

2010-01-01T23:59:59.000Z

154

Conservation of bond lengths in strained Ge-Si layers  

Science Journals Connector (OSTI)

The combined techniques of x-ray-absorption fine structure and x-ray diffraction have been used to study the strain and bond distortions in epitaxial Ge-Si on Si(001). In a 31% Ge, 340-Å pseudomorphic Ge-Si film, the Ge-Ge and Ge-Si first-neighbor bond lengths have been found to be 2.44±0.02 and 2.38±0.02 Å, respectively. The lattice parameter perpendicular to the Ge-Si/Si(001) interface has been found to be a?=5.552±0.002 Å, in agreement with the predictions of macroscopic elastic theory. These results show that the bond-length strain in the epitaxial layer appears in the second and higher coordination shells, rather than in the nearest-neighbor bond lengths, which remain the same as in unstrained Ge-Si. A microscopic model is presented that accounts for these findings.

J. C. Woicik; C. E. Bouldin; M. I. Bell; J. O. Cross; D. J. Tweet; B. D. Swanson; T. M. Zhang; L. B. Sorensen; C. A. King; J. L. Hoyt; P. Pianetta; J. F. Gibbons

1991-01-15T23:59:59.000Z

155

Tailoring the spin polarization in Ge/SiGe multiple quantum wells  

SciTech Connect

We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

2013-12-04T23:59:59.000Z

156

PROPAGATION DES ONDES LASTIQUES DE SURFACE Atlas des configurations calcules pour le quartz, le tantalate de lithium,  

E-Print Network (OSTI)

, le tantalate de lithium, le niobate de lithium et le vanado-sulfure de thallium en ce qui concerne'ensemble des configurations possibles des matériaux classiques (quartz, niobate de lithium et tantalate de lithium) ainsi que d'un matériau récemment signalé le vanado-sulfure de thallium (Tl3VS4). La propagation

Paris-Sud XI, Université de

157

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*  

E-Print Network (OSTI)

Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

Bowers, John

158

Discussion on the Low Temperature Magnetothermal Conductivity in Lightly Doped Ge(Sb) and Ge(As)  

Science Journals Connector (OSTI)

Some time ago we reported1) measurements of magnetothermal conductivity in n-type Ge in the temperature range 1.3?T?...1): For Ge(Sb) with the field Bll ...o, is negative, increases in magnitude approximatel...

Leif Halbo

1976-01-01T23:59:59.000Z

159

Ferromagnetic Mn5Ge3C0.8 contacts on Ge: work function and specific contact resistivity  

Science Journals Connector (OSTI)

We report on the study of the electrical and magnetic properties of Mn5Ge3C0.8 contacts deposited on highly doped n-Ge (1?0?0) as a potentially complementary metal–oxide–semiconductor (CMOS)-compatible material system for spin injection into Ge. Mn5Ge3C0.8 is a ferromagnet with a Curie temperature of 445 K and with a resistivity that is comparable to highly doped Ge. We extract the work function of Mn5Ge3C0.8 from metal–oxide–semiconductor capacitance measurements and obtain a specific contact resistivity rC = 5.0 ? cm2 from transmission-line measurements. We discuss possible origins of the large specific contact resistivity of Mn5Ge3C0.8 on Ge.

I A Fischer; J Gebauer; E Rolseth; P Winkel; L-T Chang; K L Wang; C Sürgers; J Schulze

2013-01-01T23:59:59.000Z

160

GE Wind Energy Germany | Open Energy Information  

Open Energy Info (EERE)

Jump to: navigation, search Jump to: navigation, search Name GE Wind Energy Germany Place Salzbergen, Germany Zip 48499 Sector Wind energy Product Germany-based, division of GE Wind Energy wind turbine manufacturer and supplier. Coordinates 52.323136°, 7.347278° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":52.323136,"lon":7.347278,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Stable, free-standing Ge nanocrystals  

SciTech Connect

Free-standing Ge nanocrystals that are stable under ambient conditions have been synthesized in a two-step process. First, nanocrystals with a mean diameter of 5 nm are grown in amorphous SiO{sub 2} by ion implantation followed by thermal annealing. The oxide matrix is then removed by selective etching in diluted HF to obtain free-standing nanocrystals on a Si wafer. After etching, nanocrystals are retained on the surface and the size distribution is not significantly altered. Free-standing nanocrystals are stable under ambient atmospheric conditions, suggesting formation of a self-limiting native oxide layer. For free-standing as opposed to embedded Ge nanocrystals, an additional amorphous-like contribution to the Raman spectrum is observed and is assigned to surface reconstruction-induced disordering of near-surface atoms.

Sharp, I.D.; Xu, Q.; Liao, C.Y.; Yi, D.O.; Beeman, J.W.; Liliental-Weber, Z.; Yu, K.M.; Zakharov, D.N.; Ager III, J.W.; Chrzan,D.C.; Haller, E.E.

2005-01-28T23:59:59.000Z

162

It, Le. requeoted thet Contmot no  

Office of Legacy Management (LM)

It, Le. requeoted thet Contmot no. It, Le. requeoted thet Contmot no. AT( 30~l)-1661 be mended to include additional development work oovered i,n the attaohed proposal. &?.EiO &,tQ ~mo~vOd b +),i' o.' am&&-t.,+ a&, follm, i:::., ,,I,: .,,,, Y, ,,, , _ i..! C:-I 2' :. ' ..I: ' :..t ,,., :I; ' :' Z : ,I' ..' ., i. :: ' ,,. Contraotor snd~Maili~~Addre6et ' ,. ;:, ' 5," :r:i,. ..I. . ( ' .:;>:i' :," ,,y _,,, I,' ,, ' :,-:,.:, ., ?I ., i..' ,, / I ,, : I 1 j: :: ; De To produoe boron of as fine a partiole Si6 ,-,:: ,,., ?., >,C.' .<' -.. <:..,: .,,,. ,, .!, oonaistent with .the prooeee. ..:. ..1, .r.. ' , .,,,' : ,,., ,, :,I <.T;C' ; y;x,; ;:< E. Information to be furnished In,ten (10) 0 forth the following infornation' j ,,,. .: : __,, (1) Complete detail8 of the rooovky

163

Role of nucleation sites on the formation of nanoporous Ge  

SciTech Connect

The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

2012-09-24T23:59:59.000Z

164

agir au Sud avec le Sud et  

E-Print Network (OSTI)

moyen et long termes. Les zones littorales subissent une pollution accrue et font l'objet d sciences de Ho Chi Minh Ville ont lancé un programme financé par la Fondation Air liquide sur la capacité, du terrain vers le marché » au Kenya, a rassemblé, sous l'égide du ministère des Mines et de l

165

Suppression of Ge-O And Ge-N Bonding at Ge-HfO(2) And Ge-TiO(2) Interfaces By Deposition Onto Plasma-Nitrided Passivated Ge Substrates: Integration Issues Ge Gate Stacks Into Advanced Devices  

SciTech Connect

A study of changes in nano-scale morphology of thin films of nano-crystalline transition metal (TM) elemental oxides, HfO{sub 2} and TiO{sub 2}, on plasma-nitrided Ge(100) substrates, and Si(100) substrates with ultra-thin (-0.8 nm) plasma-nitrided Si suboxide, SiO{sub x}, x < 2, or SiON interfacial layers is presented. Near edge X-ray absorption spectroscopy (NEXAS) has been used to determine nano-scale morphology of these films by Jahn-Teller distortion removal of band edge d-state degeneracies. These results identify a new and novel application for NEXAS based on the resonant character of the respective O K{sub 1} and N K{sub 1} edge absorptions. This paper also includes a brief discussion of the integration issues for the introduction of this Ge breakthrough into advanced semiconductor circuits and systems. This includes a comparison of nano-crystalline and non-crystalline dielectrics, as well as issues relative to metal gates.

Lee, S.; Long, J.P.; Lucovsky, G.; Whitten, J.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

166

Sminaire Farman (31 mars 2011) : Calcul Intensif Titre : Le centre de calcul de Bruyres le Chtel, moyens et applications (Daniel Bouche)  

E-Print Network (OSTI)

Séminaire Farman (31 mars 2011) : Calcul Intensif Titre : Le centre de calcul de Bruyères le Châtel

167

Interface and nanostructure evolution of cobalt germanides on Ge(001)  

SciTech Connect

Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

2014-02-21T23:59:59.000Z

168

Elimination of GeO(2) And Ge(3)N(4) Interfacial Transition Regions And Defects at N-Type Ge Interfaces: a Pathway for Formation of N-MOS Devices on Ge Substrates  

SciTech Connect

The contribution from relatively low-K SiON interfacial transition regions (ITRs) between Si and transition metal (TM) gate dielectrics places a significant limitation on equivalent oxide thickness (EOT) scaling for Si complementary metal-oxide-semiconductor (CMOS) devices. This limitation is equally significant and limiting for Ge CMOS devices. Low-K Ge-based ITRs in Ge devices have also been shown to limit performance and reliability, particular for n-MOS field effect transistors. This article identifies the source of significant electron trapping at interfaces between n-Ge or inverted p-Ge, and Ge oxide, nitride and oxynitride ITRs. This is shown to be an interfacial band alignment issue in which native Ge ITRs have conduction band offset energies smaller than those of TM dielectrics, and trap electrons for negative Ge substrate bias. This article also describes a novel remote plasma processing approach for effectively eliminating any significant native Ge ITRs and using a plasma-processing/annealing process sequence for bonding TM gate dielectrics directly to the Ge substrate surface.

Lucovsky, G.; Lee, S.; Long, J.P.; Seo, H.; Luning, J.

2009-05-19T23:59:59.000Z

169

Tracey A. LeBeau | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tracey A. LeBeau Tracey A. LeBeau About Us Tracey A. LeBeau - Director, Office of Indian Energy Policy & Programs Tracey A. LeBeau Tracey A. LeBeau (Cheyenne River Sioux) is Director for the U.S. Department of Energy's Office of Indian Energy Policy and Programs. She was appointed in January 2011 to establish this new Office which is authorized by statute to manage, coordinate, create and facilitate programs and initiatives to encourage tribal energy and energy infrastructure development. Administratively, the Office was established to also coordinate, across the Department, those policies, programs and initiatives involving Indian energy and energy infrastructure development. Ms. LeBeau has over 15 years of energy investment, start up and energy development experience. She has served in executive capacities for numerous

170

Le Venezuela en un clin d'oeil !  

E-Print Network (OSTI)

Le Venezuela en un clin d'oeil ! Vie scolaire CALENDRIER UNIVERSITAIRE Peut varier d votre session à l'Université de Montréal. SYST�ME D'ENSEIGNEMENT Québec Venezuela Baccalauréat. Le Venezuela étant un pays limitrophe à la Colombie, le thème de la sécurité est un sujet important à

Charette, André

171

GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery  

Office of Science (SC) Website

GE Uses DOE Advanced Light Sources to Develop GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Discovery & Innovation Stories of Discovery & Innovation Brief Science Highlights SBIR/STTR Highlights Contact Information Office of Science U.S. Department of Energy 1000 Independence Ave., SW Washington, DC 20585 P: (202) 586-5430 06.13.11 GE Uses DOE Advanced Light Sources to Develop Revolutionary Battery Technology Company is constructing a new battery factory in Upstate New York that is expected to create 300+ jobs. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo GE's new Image courtesy of GE GE's new "Durathon(tm)" sodium metal halide battery. The story of American manufacturing over the past two decades has too often been a tale of outsourcing, off-shoring, and downsizing-not least in

172

Über die Thalliumgermanate Tl2Ge4O9 und Tl2Ge6O13  

Science Journals Connector (OSTI)

Nach Dehydratation des Germanat-Zeoliths Tl3HGe7O16· · 4 H2O bildet sich bei 650°C das zu Me2Ge4O9 (Me=Na, K, Rb) isotype Thalliumtetragermanat. Durch Entwässerung bei 700°C entsteht aus dem Zeolith ein stabiles ...

Penelope Papamantellos; A. Wittmann

1962-01-01T23:59:59.000Z

173

Le Figure Femminili nei testi narrativi di Albert Camus.  

E-Print Network (OSTI)

??Il presente studio si propone di analizzare i personaggi femminili nei testi narrativi di Albert Camus, nella maggior parte dei quali le donne, nei ruoli… (more)

Erdas, Pier Giorgio

2006-01-01T23:59:59.000Z

174

COLE CENTRALE DE LYON pour obtenir le grade de  

E-Print Network (OSTI)

Nicolas Degrenne qui a été mon voisin de bureau pendant l'ensemble des trois années. Le partage de nos

Boyer, Edmond

175

le savoir au service du patient Tirer parti des bnfices  

E-Print Network (OSTI)

, le numerus clausus pratiqué dans plusieurs facultés de médecine de Suisse sera maintenu, pour préser

Loewith, Robbie

176

30 ORLA-JENSEN SUR LE GOUT DU CHOU-NAVET  

E-Print Network (OSTI)

30 ORLA-JENSEN SUR LE GOUT DU CHOU-NAVET DANS' LE LAIT par le Professeur ORLA-JENSEN . Docteur phil liquéfiée. SUR LE GOUT DU CHOU-NAYET DANS LE LAIT rigoureux qu a l'ordinaire;' il -deviendra même nécessaire

Paris-Sud XI, Université de

177

GE Wind Energy | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Wind Energy Jump to: navigation, search Name GE Wind Energy Place Atlanta, Georgia Zip GA 30339 Sector Wind energy Product GE's wind energy division, formed as a result of the purchase of almost all of Enron Wind Corporation's assets. Provides power plant design, engineering and site selection, as well as operation and maintenance. Coordinates 33.748315°, -84.391109° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.748315,"lon":-84.391109,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

178

Messungen derK-Konversionskoeffizienten und der Aktivierungsquerschnitte der isomeren Atomkerne Se77m , Se79m , Ge75m und Ge77m  

Science Journals Connector (OSTI)

TheK-conversion coefficients ? K of the nuclear isomers Se77m , Se79m , Ge75m and Ge77m have been measured by d...

Hermann Weigmann

1962-01-01T23:59:59.000Z

179

Universit Toulouse 2 Le Mirail (UT2 Le Mirail) Comportement, Langage, Education, Socialisation, COgnition (CLESCO)  

E-Print Network (OSTI)

,version1-26Jan2012 #12;Que la langue soit le seul lien qui unit un peuple Qu'elle soit comme l'essence de marking, this search aims to identifying distinctive criteria to distinguish the adjectival category from

Paris-Sud XI, Université de

180

Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces  

SciTech Connect

This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1995-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Le mariage africain, entre tradition et modernité : étude socio-anthropologique du couple et du mariage dans la culture gabonaise.  

E-Print Network (OSTI)

??Au Gabon, le mariage est une institution qui permet l'union de deux personnes et de deux familles. Sur le plan juridique, seul le mariage civil… (more)

Bounang Mfoungué, Cornelia

2012-01-01T23:59:59.000Z

182

Biofuel Research at Brazil Center of Excellence | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

do texto. Aproveitem. A misso do centro de excelncia de biocombustves da GE do Brasil aumentar a capacidade local de fornecer tecnologia na produo de biocombustves...

183

Meeting Energy Needs in Brazil |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Brazil Looking a Decade Ahead: Electrical Power Generation in Brazil Ricardo Hernandez Pereira 2014.11.03 In the Bioenergy Systems Organization at GE Global Research - Rio de...

184

GE Technology to Help Canada Province Meet Growing Energy Needs  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

185

Governor Cuomo, GE Announce Power Electronics Manufacturing Consortium  

NLE Websites -- All DOE Office Websites (Extended Search)

Governor Cuomo Announces 100 Businesses Led by GE to Join 500 Million Partnership with State to Develop Next-Generation Power Electronics, Creating Thousands of Jobs in Capital...

186

Technology makes reds "pop" in LED displays | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Televisions Research breakthrough will vastly improve color and crispness of images on LED devices NISKAYUNA, NY, July, 24, 2014 - GE announced today a research breakthrough that...

187

Titan propels GE wind turbine research into new territory | ornl...  

NLE Websites -- All DOE Office Websites (Extended Search)

Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

188

Heteroepitaxial Ge-on-Si by DC magnetron sputtering  

SciTech Connect

The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany)] [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Patzig, Christian; Berthold, Lutz; Höche, Thomas [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany)] [Fraunhofer Institute for Mechanics of Materials IWM, Walter-Hülse-Straße 1, 06120 Halle (Germany); Tünnermann, Andreas [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany) [Institute of Applied Physics, Abbe Center of Photonics, Friedrich Schiller University, Albert-Einstein-Straße 15, 07745 Jena (Germany); Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena (Germany)

2013-07-15T23:59:59.000Z

189

Essais sur l'investissement direct étranger, le transfert technologique et le commerce international : approches ricardiennes et analyses empiriques.  

E-Print Network (OSTI)

??Ricardo est célébré pour ses théories- sa théorie de croissance qui nous enseigne le concept de la trappe à stagnation industrielle et sa théorie de… (more)

Saadi, Mohamed

2010-01-01T23:59:59.000Z

190

Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells  

SciTech Connect

GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

2013-05-15T23:59:59.000Z

191

Effect of Ge-composition on the Gain of a Thin Layer Si 1-y Ge y Avalanche Photodiode  

Science Journals Connector (OSTI)

Gain calculation of Si 1-y Ge y n+-i-p+...avalanche photodiode (APD) is described for multiplication layer down to tens of nanometers c...

Kanishka Majumder; N. R. Das

2014-01-01T23:59:59.000Z

192

E-Print Network 3.0 - avec le travail Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

le travail Search Powered by Explorit Topic List Advanced Search Sample search results for: avec le travail Page: << < 1 2 3 4 5 > >> 1 Alignement SIMD pour le read-mapping...

193

E-Print Network 3.0 - au japon le Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

japon le Search Powered by Explorit Topic List Advanced Search Sample search results for: au japon le Page: << < 1 2 3 4 5 > >> 1 start-upstart-up Mardi19 avril 2011 Aprs le succs...

194

MU(& Ge-+v,  

Office of Legacy Management (LM)

fil fil MU(& Ge-+v, . !d R&arch & Development b This document consists of 6 Contract Ho. pages and - . --------------_____---. figures No.--~--of.--~~-_-copies, Series,&,, This subcontract entered into this 20 day 0fSepte~ber , 1943, by and between the University of Cliicago, a corporation not for pecuniary profit organized under the ICVS of the Stnto of Illinois, of Chicago, Illinois (hereinafter called "the Contractor") and Yiolverine Tube Divisionof Caluzet 2 Eecla Consolidated Co;-,er co, . a cor?orntion organized under the laws cf the State of l~lch~;an - of Detroit, I:ichigan --- (hersinnftcr called "the Subcontractoi"). WIEHEAS, tho Contractor has heretofore onterod into a contract v;ith the United States of America (rcprcse;!tcd by its dtlly designated

195

Charm photoproduction at 20 GeV  

Science Journals Connector (OSTI)

Sixty-two charm events have been observed in an exposure of the SLAC Hybrid Facility toa backward sacttered laser beam. Based on 22 neutral and 21 charged decays we have measured the charmed-meson lifetimes to be ?D0=(6.8-1.8+2.3)×10-13 sec, ?D±=(7.4-2.0+2.3)×10-13 sec and their ratio ?D±?D0=1.1-0.3+0.6. The inclusive charm cross section at a photon energy of 20 GeV has been measured to be 56-23+24 nb. Evidence is presented for a non-DD¯ component to charm production, consistent with (35±20)% ?c+ production and some D*± production. We have found no unambiguous F decays.

K. Abe et al. ((SLAC Hybrid Facility Photon Collaboration))

1984-07-01T23:59:59.000Z

196

3 GeV Injector Design Handbook  

SciTech Connect

This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

Wiedemann, H.; /SLAC, SSRL

2009-12-16T23:59:59.000Z

197

AIX-MARSEILLE UNIVERSIT prsente pour obtenir le titre de  

E-Print Network (OSTI)

investigation and global stability analysis Soutenue le 17 mars 2014 devant le jury compos� de Jean the separation of the boundary layer and a recirculating bubble is observed downstream of the shock foot. First, and a global stability analysis is performed. Eigenvalue decomposition of the linearised Navier-Stokes operator

Boyer, Edmond

198

Photoemission study of Si(111)-Ge(5×5) surfaces  

Science Journals Connector (OSTI)

Photoemission spectroscopy was used to study Si(111)-Ge(5×5) surfaces prepared by annealing Ge films deposited onto Si(111)-(7×7) substrates. The Si 2p core-level line shape was modified in going from (7×7) to (5×5) systems. By decomposing the spectra into bulk- and surface-shifted components the changes in line shape were identified as due to selective replacement of Si by Ge in different layers of the substrate, without any drastic change in the surface structure. The Ge 3d core-level line shape for the Si(111)-Ge(5×5) surface was also measured and compared with that for the Ge(111)-c(2×8) surface. These results are discussed in terms of models for the Si(111)-(7×7) structure. A surface state was observed on the Si(111)-Ge(5×5) surface, which gave rise to a metalliclike Fermi edge in the angle-integrated spectra; a similar surface state was observed on the Si(111)-(7×7) surface but not on the Ge(111)-c(2×8) surface.

T. Miller; T. C. Hsieh; T. -C. Chiang

1986-05-15T23:59:59.000Z

199

Vibrational dynamics in isotopically substituted vitreous GeO2  

Science Journals Connector (OSTI)

We report the polarized Raman spectra of vitreous Ge O216, Ge O218, Ge70O2, and Ge74O2. This yields the O16?O18 and Ge70?Ge74 isotopic shifts for nearly all vibrational modes of the pure glassy material. The shifts of the broad high-frequency (infrared-active) modes are as predicted by a nearest-neighbor central-force ideal continuous—random-network model. The shift of the broad dominant Raman line indicates a small but significant dependence on the Ge mass, and this suggests an effect of disorder not included in the central-force theory. The narrow "defect" line at 530 cm-1 appears to be all oxygen motion, and is tentatively identified with a regular ring of bonds. The narrow line at 345 cm-1 is unique in that it exhibits very little oxygen shift; it seems to consist largely of Ge motion, for which we have no firm explanation.

F. L. Galeener; A. E. Geissberger; G. W. Ogar; Jr.; R. E. Loehman

1983-10-15T23:59:59.000Z

200

Secretary Chu Speaks at GE Solar Facility | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Chu Speaks at GE Solar Facility Chu Speaks at GE Solar Facility Secretary Chu Speaks at GE Solar Facility November 18, 2011 - 1:19pm Addthis Secretary Steven Chu's remarks, as prepared for delivery, at the General Electric Solar Facility in Arvada, Colorado. Thank you, Fred [Seymour], for the introduction. GE is a leader in energy innovation. Thomas Edison, the father of GE, once said, "I'd put my money on the sun and solar energy. What a source of power!" I imagine he would be amazed by the solar technology that is tested here. It's great to be in Colorado, a state that is at the forefront of the clean energy economy and has more solar jobs per capita than any other state[i]. I'm here at a critical time for America's energy future. It's a time of challenge, but it's also a time of opportunity.

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

GE Nucleus for Residential Energy Use Education, Home Energy  

NLE Websites -- All DOE Office Websites (Extended Search)

GE Nucleus for Residential Energy Use Education, Home Energy GE Nucleus for Residential Energy Use Education, Home Energy Management/Control, Residential Energy Integration Speaker(s): William Watts Date: August 4, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Home Energy Gateways offer a single point of access to the AMI Smart Meter into the home. The Nucleus is GE's home energy management gateway. The GE Nucleus securely communicates to a Smart Meter and delivers real-time whole home energy consumption data for display to the Consumer. The Consumer is able to visualize their energy usage habits on a Client that is connected via TLS encryption to the WiFi or Ethernet interface of the Nucleus. The Nucleus records history of the consumer's usage and cost data for tracking of energy consumption habits. GE has a suite of Smart Appliances that

202

GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Noncompliance Determination (2013-SE-4901) Noncompliance Determination (2013-SE-4901) GE Lighting Solutions: Noncompliance Determination (2013-SE-4901) January 11, 2013 DOE issued a Notice of Noncompliance Determination to General Electric Lighting Solutions finding that various models of traffic signal modules do not comport with the energy conservation standards. DOE determined the products were noncompliant based on the company's own testing. GE Lighting Solutions must immediately notify each person (or company) to whom GE Lighting Solutions distributed the noncompliant products that the products do not meet Federal standards. In addition, GE Lighting Solutions must provide to DOE documents and records showing the number of units GE Lighting Solutions distributed and to whom. The manufacturer

203

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicate–oxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?°C for 5 min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?°C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14 nm. As the annealing temperature is raised to 850?°C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

204

On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer  

SciTech Connect

Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

2013-09-14T23:59:59.000Z

205

E-Print Network 3.0 - accompagnant le texte Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

accompagnant le texte Search Powered by Explorit Topic List Advanced Search Sample search results for: accompagnant le texte Page: << < 1 2 3 4 5 > >> 1 Direction des ressources...

206

prsente pour obtenir le titre de DOCTEUR DE l'UNIVERSIT JEAN MONNET  

E-Print Network (OSTI)

linéaires. �tude mathématique et numérique par Fouad SAIDI soutenue le 26 novembre 2004 devant le jury

207

Air-Sea linkages in European Port Cities Inha & Le Havre International Conference, Le Havre, Oct. 28-29 (2005)  

E-Print Network (OSTI)

1 Air-Sea linkages in European Port Cities 5th Inha & Le Havre International Conference, Le Havre the relationships between air, maritime & logistic activities of port cities in Europe. Although recent studies have considered sea-air intermodality as a locational advantage for ports and coastal urban centres

Paris-Sud XI, Université de

208

Low-temperature microwave magnetoresistance of lightly doped p-Ge and p-Ge1?x Six  

Science Journals Connector (OSTI)

The magnetoresistance of a lightly doped p-Ge1?x Six alloy is studied in the range of compositions x = 1–2 at %. The results are compared with the available data for lightly doped p-Ge. The studie...

A. I. Veinger; A. G. Zabrodskii; T. V. Tisnek

2005-10-01T23:59:59.000Z

209

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network (OSTI)

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

210

Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals  

SciTech Connect

The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

2013-12-04T23:59:59.000Z

211

Low temperature epitaxial growth of Ge on cube- textured Ni  

SciTech Connect

Quasi- single crystal Ge films were grown on [001]<010> textured Ni substrate at a temperature of 350 oC using an insulating buffer layer of CaF2. A direct deposition of Ge on Ni at 350 oC was shown to alloy with Ni. From x- ray pole figure analysis, it was shown that Ge grew epitaxially with the same orientation as CaF2 and the dispersions in the out- of- plane and in- plane directions were found to be 1.7 0.1o and 6 1o, respectively. In the out- of- plane direction, Ge[111]||CaF2[111]||Ni[001]. In addition, the Ge consisted of four equivalent in- plane oriented domains such that two mutually orthogonal directions: Ge 211 and Ge 011 are parallel to mutually orthogonal directions: Ni 110 and Ni 110 , respectively of the Ni(001) surface. This was shown to be originated from the four equivalent in- plane oriented domains of CaF2 created to minimize the mismatch strain between CaF2 and Ni in those directions.

GIARE, C [Rensselaer Polytechnic Institute (RPI); Palazzo, J [Rensselaer Polytechnic Institute (RPI); Goyal, Amit [ORNL; WANG, G [Rensselaer Polytechnic Institute (RPI); LU, T [Rensselaer Polytechnic Institute (RPI)

2012-01-01T23:59:59.000Z

212

The possibility of improving the structural perfection of the new heterojunctions GaAs-(Ge2)1? x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, GaP-(Ge2)1?x (ZnSe)x, and Si-(Ge2)1?x (ZnSe)x  

Science Journals Connector (OSTI)

Based on morphological investigations, as well as on a study of the scanning patterns and diffraction spectra of the heterostructures GaAs-(Ge2)1?x (ZnSe)x, Ge-(Ge2)1?x (ZnSe)x, Ga...

A. S. Saidov; É. A. Koshchanov; A. Sh. Razzakov

1998-01-01T23:59:59.000Z

213

GeV Emission from Collisional Magnetized Gamma Ray Bursts  

E-Print Network (OSTI)

Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

P. Mészáros; M. J. Rees

2011-04-26T23:59:59.000Z

214

Search for GeV Gamma Ray Bursts with the ARGO-YBJ Detector: Summary of Eight Years of Observations  

E-Print Network (OSTI)

The search for Gamma Ray Burst (GRB) emission in the energy range 1-100 GeV in coincidence with the satellite detection has been carried out using the Astrophysical Radiation with Ground-based Observatory at YangBaJing (ARGO-YBJ) experiment. The high altitude location (4300 m a.s.l.), the large active surface ($\\sim$ 6700 m$^2$ of Resistive Plate Chambers), the wide field of view ($\\sim 2~$sr, limited only by the atmospheric absorption) and the high duty cycle ($>$ 86 %) make the ARGO-YBJ experiment particularly suitable to detect short and unexpected events like GRBs. With the scaler mode technique, i.e., counting all the particles hitting the detector with no measurement of the primary energy and arrival direction, the minimum threshold of $\\sim$ 1 GeV can be reached, overlapping the direct measurements carried out by satellites. During the experiment lifetime, from December 17, 2004 to February 7, 2013, a total of 206 GRBs occurring within the ARGO-YBJ field of view (zenith angle $\\theta$ $\\le$ 45$^{\\circ}...

Bartoli, B; Bi, X J; Branchini, P; Budano, A; Camarri, P; Cao, Z; Cardarelli, R; Catalanotti, S; Chen, S Z; Chen, T L; Creti, P; Cui, S W; Dai, B Z; D'Amone, A; Danzengluobu,; De Mitri, I; Piazzoli, B D'Ettorre; Di Girolamo, T; Di Sciascio, G; Feng, C F; Feng, Zhaoyang; Feng, Zhenyong; Gou, Q B; Guo, Y Q; He, H H; Hu, Haibing; Hu, Hongbo; Iacovacci, M; Iuppa, R; Jia, H Y; Labaciren,; Li, H J; Liguori, G; Liu, C; Liu, J; Liu, M Y; Lu, H; Ma, L L; Ma, X H; Mancarella, G; Mari, S M; Marsella, G; Martello, D; Mastroianni, S; Montini, P; Ning, C C; Panareo, M; Perrone, L; Pistilli, P; Ruggieri, F; Salvini, P; Santonico, R; Shen, P R; Sheng, X D; Shi, F; Surdo, A; Tan, Y H; Vallania, P; Vernetto, S; Vigorito, C; Wang, H; Wu, C Y; Wu, H R; Xue, L; Yang, Q Y; Yang, X C; Yao, Z G; Yuan, A F; Zha, M; Zhang, H M; Zhang, L; Zhang, X Y; Zhang, Y; Zhao, J; Zhaxiciren,; Zhaxisangzhu,; Zhou, X X; Zhu, F R; Zhu, Q Q; Zizzi, G

2015-01-01T23:59:59.000Z

215

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate  

SciTech Connect

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

Soares, G. V.; Krug, C. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Miotti, L.; Bastos, K. P.; Lucovsky, G. [Department of Physics, North Carolina State University, Raleigh, North Carolina 27695 (United States); Baumvol, I. J. R. [Instituto de Fisica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil); Universidade de Caxias do Sul, Caxias do Sul, Rio Grande do Sul 95070-560 (Brazil); Radtke, C. [Instituto de Quimica, UFRGS, Porto Alegre, Rio Grande do Sul 91509-900 (Brazil)

2011-03-28T23:59:59.000Z

216

Depuis les annes 1950, le recours l'automobile pour de courts  

E-Print Network (OSTI)

Depuis les années 1950, le recours à l'automobile pour de courts trajets quotidiens ne cesse de elles seules, à réduire le recours à l'automobile. La question se pose alors de cerner les conditions permettant de changer le comportement en matière de choix modal (bus ou automobile) : le station- nement ne

Paris-Sud XI, Université de

217

Ingestion par le mouton de quelques fourrages mditerranens d'hiver riches en eau  

E-Print Network (OSTI)

.), le trèfle persan (Trifolium resupinatum L.) et le ray-grass italien (Lolium multiflorum L.). Matériel quelquefois observés pour le bersim et le ray-grass italien alors que la consomma- tion du trèfle persan reste

Boyer, Edmond

218

Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures  

SciTech Connect

The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

2013-02-25T23:59:59.000Z

219

Decentralized Control of Infinite Systems Gabriel Kalyon Tristan Le Gall  

E-Print Network (OSTI)

Decentralized Control of Infinite Systems Gabriel Kalyon · Tristan Le Gall · Herv´e Marchand. Marchand INRIA, Centre Rennes - Bretagne Atlantique E-mail: herve.marchand@inria.fr G. Kalyon is supported

Paris-Sud XI, Université de

220

GE Appliances: Proposed Penalty (2010-CE-2113) | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) GE Appliances: Proposed Penalty (2010-CE-2113) September 8, 2010 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards. DOE regulations require a manufacturer (which includes importers) to submit reports certifying that its products have been tested and meet the applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Appliances: Proposed Penalty (2010-CE-2113) More Documents & Publications De'Longhi USA: Proposed Penalty (2010-CE-2114)

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Act One: NPCP (2013-CE-49001) Excellence Opto: Proposed Penalty (2013-CE-49002)

222

Crystal Lake - GE Energy Wind Farm | Open Energy Information  

Open Energy Info (EERE)

GE Energy Wind Farm GE Energy Wind Farm Jump to: navigation, search Name Crystal Lake - GE Energy Wind Farm Facility Crystal Lake - GE Energy Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location IA Coordinates 43.194201°, -93.860521° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.194201,"lon":-93.860521,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

223

Northern Colorado Wind Energy Center (GE) | Open Energy Information  

Open Energy Info (EERE)

Center (GE) Center (GE) Jump to: navigation, search Name Northern Colorado Wind Energy Center (GE) Facility Northern Colorado Wind Energy Center (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Developer NextEra Energy Energy Purchaser Xcel Energy Location Logan County CO Coordinates 40.974539°, -103.025336° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.974539,"lon":-103.025336,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

224

ORNL Partners with GE on New Hybrid | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

ORNL Partners with GE on New Hybrid ORNL Partners with GE on New Hybrid September 02, 2011 Water Heater About 400 jobs will soon be created at a Louisville General Electric plant at which a new electric water heater will be built. The technology was developed through a collaboration between ORNL and GE. The appliance will meet the new Energy Star water heater program criteria, which require future heaters to be twice as efficient as an electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save American households approximately $780 million. ORNL's Patrick Hughes said the water heater will benefit consumers with its energy efficiency as well as its cost savings. "It will give you as much hot water and have the same recovery times so you

225

Intern Shares Insight Into Researchers' Minds |GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

rest of the year, I am a Ph.D. candidate at Virginia Tech, where my research is in aerodynamics and instrumentation development. At school, my work is supported by GE Power and...

226

A Deep Dive into the Subsea Environment | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

every step must be carried out in a safe manner to assure the risk of any serious accident is kept low, with very tight and conservative control. Filling the need GE...

227

Laser Guiding for GeV Laser-Plasma Accelerators  

E-Print Network (OSTI)

Overview of plasma-based accelerator concepts. IEEE Trans.using laser wake?eld accelerators. Meas. Sci. Technol. 12,for GeV laser-plasma accelerators. In Advanced Accelerator

Leemans, Wim; Esarey, Eric; Geddes, Cameron; Schroeder, C.B.; Toth, Csaba

2005-01-01T23:59:59.000Z

228

Making Silicon Carbide Devices in the Cleanroom | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Silicon Carbide Devices in the Cleanroom Making Silicon Carbide Devices in the Cleanroom Ron Olson 2012.08.23 As the Wide Bandgap Process and Fab manager for the GE Global Research...

229

Ge-on-Si laser operating at room temperature  

E-Print Network (OSTI)

Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

Liu, Jifeng

230

Helping Astronauts Back on Earth | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Helping Astronauts Back on Earth Helping Astronauts Back on Earth Vikas Revanna Shivaprabhu 2014.09.11 I received an email in early May from GE Global Research regarding a summer...

231

Take a Closer Look at the Brain | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Take a Closer Look at the Brain Take a Closer Look at the Brain Worldwide, more than 450 million people are living with compromised brain health. GE Global Research scientists,...

232

Be a part of something bigger than yourself GE Healthcare  

E-Print Network (OSTI)

, reliability, cost and manufacturability. Work is done using 3D CAD systems. Leading engineering tasks external covers, packaging, mechanisms, cables & harnesses, labelling, and packaging. Knowledge Healthcare, a $17 billion division of General Electric Company. GE Healthcare's broad range of products

Rimon, Elon

233

Cloud-Based Air Traffic Management Announcement | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Works to Bring Air Traffic Management Into "The Cloud" GE Works to Bring Air Traffic Management Into "The Cloud" A global leader in avionics and software development, the General...

234

Sandia National Laboratories: Northrop-Grumman, GE Partnerships...  

NLE Websites -- All DOE Office Websites (Extended Search)

Experience Northrop-Grumman, GE Partnerships Tap a Wide Range of Sandia Labs Experience Solar Energy Research Institute for India and the United States Kick-Off American Chemical...

235

Steve Duclos, Chief Scientist, GE Global Research, Research Priorities...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

essionC3Duclos-GE.pdf More Documents & Publications Trans-Atlantic Workshop on Rare Earth Elements and Other Critical Materials for a Clean Energy Future Iowa lab gets critical...

236

Wind Turbine Transportation in Toyland | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Edison's Desk > Wind Turbine Transportation in Toyland Wind Turbine Transportation in Toyland Charles (Burt) Theurer 2011.05.27 GE doesn't just make wind turbines. We also deliver...

237

LNG Technology Is in the News | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

LNG Technology Is in the News LNG Technology Is in the News Laura Hudy 2013.02.07 My name is Laura Hudy, and I lead the Thermal Energy Systems team at GE Global Research. One of...

238

Ge quantum dots structural peculiarities depending on the preparation conditions  

Science Journals Connector (OSTI)

EXAFS and XANES spectroscopy methods have been applied in a study of the influence of the preparation conditions on the spatial and electronic structure of Ge/Si heterostructures.

Erenburg, S.

2003-08-28T23:59:59.000Z

239

Notrees 1B (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

B (GE Energy) Wind Farm B (GE Energy) Wind Farm Jump to: navigation, search Name Notrees 1B (GE Energy) Wind Farm Facility Notrees 1B (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Location TX Coordinates 31.9685988°, -99.9018131° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.9685988,"lon":-99.9018131,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

240

Enhanced Oil Recovery to Fuel Future Oil Demands | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

to Fuel Future Oil Demands Enhanced Oil Recovery to Fuel Future Oil Demands Trevor Kirsten 2013.10.02 I'm Trevor Kirsten and I lead a team of GE researchers that investigate a...

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Pushing Super Materials to the Limit | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

to the Limit this Spring Break SpringBreakIt - Pushing Super Materials to the Limit this Spring Break Joseph Vinciquerra 2014.04.23 I lead GE's Materials Processing and Testing...

242

Le jugement des candidats par les entreprises lors des recrutements  

E-Print Network (OSTI)

l'explication du chômage par les modèles de recherche d'emploi ou job search. Or, comme le concèdent l'employer search. Cet article prolonge cette intuition en se donnant pour objectif de mettre en'hypothèse travaillée est celle d'un lien entre la façon dont s'opèrent les mises en relation sur le marché du travail

Paris-Sud XI, Université de

243

Prsente pour obtenir le grade de DOCTEUR EN SCIENCES  

E-Print Network (OSTI)

............................................... 22 II.B.2.d. Activation de Keap1-Nrf2 par l'H2O2 et le NO de la famille CNC-bZip Nrf2 et Bach2 Directeur de thèse : Michel TOLEDANO Présentée à Saclay le 22 D. Hayes Examinateur M. Jean-François Jeannin Rapporteur M. Simon Saule Examinateur, Président du

Paris-Sud XI, Université de

244

Le th'eor`eme de SchroederBernstein  

E-Print Network (OSTI)

Le th'eor`eme de Schroeder­Bernstein dans le Calcul des Constructions Hugo Herbelin M'emoire de DEA #12; R'esum'e Notre but est de d'evelopper une d'emonstration du th'eor`eme de Schroeder`ese : : : : : : : : : : : : : : : : : 5 2 D'eveloppement du th'eor`eme de Schroeder­Bernstein dans une th'eorie typ'ee des ensembles 7 2

Herbelin, Hugo

245

MMOIRES ORIGINAUX Ionisation par le phosphore et phosphorescence  

E-Print Network (OSTI)

M�MOIRES ORIGINAUX Ionisation par le phosphore et phosphorescence Par Léon et Eugène BLOCH [Faculté phosphorescence avait hesoin d'être précisée. Si en effet la phosphorescence est duc à la combustion du phosphore, elle doit être plus vive dans l'oxygène quc dans l'air. Or dans l'oxygène pur, le phosphore cesse d

Boyer, Edmond

246

Mons, le 31 janvier 2012 Docteurs honoris causa -UCL  

E-Print Network (OSTI)

�mocratique du Congo Conf�rence avec Solange Lusiku et Bob Kabamba, le 3 f�vrier � Mons Solange Lusiku, �ditrice�mocratique du Congo �. Cette conf�rence-d�bat sera l'occasion de faire connaissance avec la femme de conviction Lusiku et Bob Kabamba sur le th�me � Journalisme et d�mocratie : la R�publique d�mocratique du Congo

Nesterov, Yurii

247

Probing the Structure of {sup 74}Ge Nucleus with Coupled-channels Analysis of {sup 74}Ge+{sup 74}Ge Fusion Reaction  

SciTech Connect

We study the fusion reaction of the {sup 74}Ge+{sup 74}Ge system in term of the full order coupled-channels formalism. We especially calculated the fusion cross section as well as the fusion barrier distribution of this reaction using transition matrix suggested by recent Coulomb excitation experiment. We compare the results with the one obtained by coupling matrix based on pure vibrational and rotational models. The present coupled-channels calculations for the barrier distributions obtained using experiment coupling matrix is in good agreement with the one obtained with vibrational model, in contrast to the rotational model. This is indicates that {sup 74}Ge nucleus favor a spherical shape than a deformed shape in its ground state. Our results will resolve the debates concerning the structure of this nucleus.

Zamrun F, Muhammad [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia); Jurusan Fisika FMIPA, Universitas Haluoleo, Kendari, Sulawesi Tenggara, 93232 (Indonesia); Kasim, Hasan Abu [Deparment of Physics University of Malaya, Kuala Lumpur, 50603 (Malaysia)

2010-12-23T23:59:59.000Z

248

Broad Line Radio Galaxies Observed with Fermi-LAT: The Origin of the GeV Gamma-Ray Emission  

SciTech Connect

We report on a detailed investigation of the {gamma}-ray emission from 18 broad line radio galaxies (BLRGs) based on two years of Fermi Large Area Telescope (LAT) data. We confirm the previously reported detections of 3C 120 and 3C 111 in the GeV photon energy range; a detailed look at the temporal characteristics of the observed {gamma}-ray emission reveals in addition possible flux variability in both sources. No statistically significant {gamma}-ray detection of the other BLRGs was however found in the considered dataset. Though the sample size studied is small, what appears to differentiate 3C 111 and 3C 120 from the BLRGs not yet detected in {gamma}-rays is the particularly strong nuclear radio flux. This finding, together with the indications of the {gamma}-ray flux variability and a number of other arguments presented, indicate that the GeV emission of BLRGs is most likely dominated by the beamed radiation of relativistic jets observed at intermediate viewing angles. In this paper we also analyzed a comparison sample of high accretion-rate Seyfert 1 galaxies, which can be considered radio-quiet counterparts of BLRGs, and found none were detected in {gamma}-rays. A simple phenomenological hybrid model applied for the broad-band emission of the discussed radio-loud and radio-quiet type 1 active galaxies suggests that the relative contribution of the nuclear jets to the accreting matter is {ge} 1% on average for BLRGs, while {le} 0.1% for Seyfert 1 galaxies.

Kataoka, J.; /Waseda U., RISE; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Takahashi, Y.; /Waseda U., RISE; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Hayashida, M.; /SLAC /Stanford U., HEPL /KIPAC, Menlo Park; Grandi, P.; /Bologna Observ.; Burnett, T.H.; /Washington U., Seattle; Celotti, A.; /SISSA, Trieste; Fegan, S.J.; Fortin, P.; /Ecole Polytechnique; Maeda, K.; Nakamori, T.; /Waseda U., RISE; Taylor, G.B.; /New Mexico U.; Tosti, G.; /INFN, Perugia /Perugia U.; Digel, S.W.; /SLAC /Stanford U., HEPL /KIPAC, Menlo Park; McConville, W.; /NASA, Goddard /Maryland U.; Finke, J.; /Naval Research Lab, Wash., D.C.; D'Ammando, F.; /IASF, Palermo /INAF, Rome

2012-06-07T23:59:59.000Z

249

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

250

CINETIQUES DE SORPTION DU CO2 DANS LE CADRE DU STOCKAGE GEOLOGIQUE DU CO2 DANS LE CHARBON  

E-Print Network (OSTI)

CINETIQUES DE SORPTION DU CO2 DANS LE CADRE DU STOCKAGE GEOLOGIQUE DU CO2 DANS LE CHARBON KINETIC PROCESSES OF CO2 SORPTION FOR CO2 STORAGE IN COAL SEAMS Delphine CHARRIERE1, 2 , Zbigniew POKRYSZKA1 récupération assistée du méthane requiert des informations sur les mécanismes de sorption de gaz. Dans ce

Boyer, Edmond

251

Une langue sans territoire? Le judo-espagnol dans le discours des instituteurs de l'Alliance isralite universelle  

E-Print Network (OSTI)

Une langue sans territoire? Le judéo-espagnol dans le discours des instituteurs de l'Alliance premières écoles élémentaires de son réseau, en 1862, la société philanthropique de l'Alliance israélite école, afin de favoriser, selon l'Alliance, « la régénération morale ». Ce texte analyse comment les

Paris-Sud XI, Université de

252

Ge interactions on HfO{sub 2} surfaces and kinetically driven patterning of Ge nanocrystals on HfO{sub 2}  

SciTech Connect

Germanium interactions are studied on HfO{sub 2} surfaces, which are prepared through physical vapor deposition (PVD) and by atomic layer deposition. X-ray photoelectron spectroscopy and temperature-programed desorption are used to follow the reactions of germanium on HfO{sub 2}. Germanium chemical vapor deposition at 870 K on HfO{sub 2} produces a GeO{sub x} adhesion layer, followed by growth of semiconducting Ge{sup 0}. PVD of 0.7 ML Ge (accomplished by thermally cracking GeH{sub 4} over a hot filament) also produces an initial GeO{sub x} layer, which is stable up to 800 K. PVD above 2.0 ML deposits semiconducting Ge{sup 0}. Temperature programed desorption experiments of {approx}1.0 ML Ge from HfO{sub 2} at 400-1100 K show GeH{sub 4} desorption below 600 K and GeO desorption above 850 K. These results are compared to Ge on SiO{sub 2} where GeO desorption is seen at 550 K. Exploiting the different reactivity of Ge on HfO{sub 2} and SiO{sub 2} allows a kinetically driven patterning scheme for high-density Ge nanoparticle growth on HfO{sub 2} surfaces that is demonstrated.

Stanley, Scott K.; Joshi, Sachin V.; Banerjee, Sanjay K.; Ekerdt, John G. [Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States); Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712-0240 (United States); Department of Chemical Engineering, University of Texas at Austin, Austin, Texas 78712-0231 (United States)

2006-01-15T23:59:59.000Z

253

16 - Microcavities and quantum cascade laser structures based on silicon–germanium (SiGe) nanostructures  

Science Journals Connector (OSTI)

Abstract: This chapter discusses two types of Si-based light-emitting devices based on Ge quantum dots in optical microcavities and SiGe quantum cascade (QC) structures. After reviewing various solutions for Si-based light-emitting devices, the chapter describes the method to enhance light emission from Ge dots through embedding them into optical microcavities. It then reviews SiGe quantum cascade laser (QCL) structures on issues of material growth, electroluminescence from SiGe QC structures, n-type SiGe QC structures, and waveguides for SiGe QCLs.

J. Xia; Y. Shiraki; J. Yu

2011-01-01T23:59:59.000Z

254

On the Al-Si, Al-Ge, and Al-Ge-Si systems and their application to brazing in high power semiconductor devices  

Science Journals Connector (OSTI)

Results of the Smith thermal analysis studies13 of the Al-Si, Al-Ge, and Al-Ge-Si systems are presented and compared with ... . Isothermal and vertical sections for the Al-Ge-Si system, computed from thermodynami...

F. H. Hayes; R. D. Longbottom; E. Ahmad; G. Chen

1993-08-01T23:59:59.000Z

255

The tomato ethylene receptors NR and LeETR4 are negative regulators of ethylene response and exhibit  

E-Print Network (OSTI)

The tomato ethylene receptors NR and LeETR4 are negative regulators of ethylene response, 2000 (received for review December 16, 1999) The plant hormone ethylene is involved in many a family of ethylene receptors, desig- nated LeETR1, LeETR2, NR, LeETR4, and LeETR5, with homology

Klee, Harry J.

256

Electron spin resonance observation of an interfacial Ge  

Science Journals Connector (OSTI)

Using electron spin resonance (ESR), we report on the observation of a first Ge dangling bond (DB)-type interface defect in the SiO2/(100)GexSi1?x/SiO2/(100)Si heterostructure manufactured by the condensation technique. The center, exhibiting monoclinic-I (C2v) symmetry with principal g values g1 = 2.0338 ± 0.0003, g2 = 2.0386 ± 0.0006, g3 = 2.0054 is observed in maximum densities of ~6.8 ? 1012 cm?2 of the GexSi1?x/SiO2 interface for x~0.7, the signal disappearing for x outside the 0.45–0.93 range. The notable absence of interfering Si Pb-type centers enables unequivocal spectral analysis. Collectively, the combination of all data leads to depicting the defect as a Ge Pb 1-type center, i.e. not a trigonal basic Ge Pb(0)-type center (). Understanding the modalities of the defect's occurrence may provide an insight into the thus far elusive role of Ge DB defects at Ge/insulator interfaces, and widen our understanding of interfacial DB centers in general.

A Stesmans; P Somers; V V Afanas'ev

2009-01-01T23:59:59.000Z

257

A new measurement of the structure functions $P_{LL}-P_{TT}/epsilon$ and $P_{LT}$ in virtual Compton scattering at $Q^2=$ 0.33 (GeV/c)$^2$  

E-Print Network (OSTI)

The cross section of the $ep \\to e' p' \\gamma$ reaction has been measured at $Q^2 = 0.33$ (GeV/c)$^2$. The experiment was performed using the electron beam of the MAMI accelerator and the standard detector setup of the A1 Collaboration. The cross section is analyzed using the low-energy theorem for virtual Compton scattering, yielding a new determination of the two structure functions $P_LL}-P_{TT}/epsilon$ and $P_{LT}$ which are linear combinations of the generalized polarizabilities of the proton. We find somewhat larger values than in the previous investigation at the same $Q^2$. This difference, however, is purely due to our more refined analysis of the data. The results tend to confirm the non-trivial $Q^2$-evolution of the generalized polarizabilities and call for more measurements in the low-$Q^2$ region ($\\le$ 1 (GeV/c)$^2$).

The MAMI-A1 Collaboration; :; P. Janssens; L. Doria; P. Achenbach; C. Ayerbe Gayoso; D. Baumann; J. C. Bernauer; I. K. Bensafa; R. Böhm; D. Bosnar; E. Burtin; N. D'Hose; X. Defaÿ; M. Ding; M. O. Distler; H. Fonvieille; J. Friedrich; J. M. Friedrich; G. Laveissière; M. Makek; J. Marroncle; H. Merkel; U. Müller; L. Nungesser; B. Pasquini; J. Pochodzalla; O. Postavaru; M. Potokar; D. Ryckbosch; S. Sanchez Majos; B. S. Schlimme; M. Seimetz; S. Širca; G. Tamas; R. Van de Vyver; L. Van Hoorebeke; A. Van Overloop; Th. Walcher; M. Weinriefer

2008-03-06T23:59:59.000Z

258

Cedar Creek Wind Farm I (GE) | Open Energy Information  

Open Energy Info (EERE)

GE) GE) Jump to: navigation, search Name Cedar Creek Wind Farm I (GE) Facility Cedar Creek Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Babcock & Brown/BP America Developer Babcock & Brown/BP America Energy Purchaser Xcel Energy Location Weld County east of Grover CO Coordinates 40.873578°, -104.07825° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.873578,"lon":-104.07825,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

259

Greenhouse Gas Services AES GE EFS | Open Energy Information  

Open Energy Info (EERE)

Greenhouse Gas Services AES GE EFS Greenhouse Gas Services AES GE EFS Jump to: navigation, search Name Greenhouse Gas Services (AES/GE EFS) Place Arlington, Virginia Zip 22203-4168 Product Develop and invest in a range of projects that reduce greenhouse gas emissions that produce verified GHG credits. Coordinates 43.337585°, -89.379449° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":43.337585,"lon":-89.379449,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

260

Top of the World (GE) | Open Energy Information  

Open Energy Info (EERE)

Top of the World (GE) Top of the World (GE) Facility Top of the World (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner Duke Energy Carolinas LLC Developer Duke Energy Carolinas LLC Energy Purchaser PacifiCorp Location 4 miles northeast of Glenrock WY Coordinates 42.914132°, -105.691223° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.914132,"lon":-105.691223,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

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261

NETL: News Release - GE Sets Benchmarks for Fuel Cell Performance  

NLE Websites -- All DOE Office Websites (Extended Search)

August 8, 2005 August 8, 2005 GE Sets Benchmarks for Fuel Cell Performance Achievements Move Efficient, Clean SOFC Technology Closer to Mainstream Energy Markets TORRANCE, CA - In the race to speed solid oxide fuel cell (SOFC) technology out of niche markets and into widespread commercial use, GE Hybrid Power Generation Systems has kicked fuel cell performance into high gear. Recent advancements have dramatically improved baseline cell performance and accelerate GE's prospects for achieving the system efficiency and cost objectives of DOE's Solid State Energy Alliance (SECA) program. Packing more power into smaller volumes is one of the breakthroughs needed to reduce the cost and expand the use of efficient, environmentally friendly fuel cells. But increasing power density isn't the only goal; as power density increases, fuel cells must continue to efficiently and reliably convert fuel to electric power.

262

Tunneling states in vitreous GeO2s  

Science Journals Connector (OSTI)

Ultrasonic measurements of the attenuation and the velocity variation have been carried out in amorphous GeO2 at low temperature (0.3–10 K) and high frequencies (80–210 MHz). From numerical fits to the tunneling model, the typical parameters of the tunneling states (TS) were determined and compared to those found for vitreous SiO2 . The study reveals that in a-GeO2 , which is considered as a close structural analog to a-SiO2 , although the density of states is found to be very similar in both materials, the coupling between the TS and the phonons is significantly smaller. In the model of coupled tetrahedra as the origin of the TS, this difference can be understood in view of the fact that numerical calculations about the vibrational characteristics of network amorphous solids indicate that the tetrahedra are more decoupled in vitreous GeO2 than in vitreous silica.

Christiane Laermans; Veerle Keppens; Robert Weeks

1997-02-01T23:59:59.000Z

263

Le Jour d'Avant Sieste Mars 2005  

E-Print Network (OSTI)

Gulf Stream +DNA La circulation océanique sur l'Atlantique Nord révèle une forte asymétrie zonale Rôle la Dérive Nord Atlantique (DNA) par la modélisation 2. Asymétrie entre l'Ouest Atl. et l'Est Atl zonales dans l'Atl. forçant ARPEGE Température océanique Zonale sur l'Atlantique Nord SST Janvier SST

264

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures  

SciTech Connect

The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

265

E-Print Network 3.0 - appliquer le taux Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

appliquer le taux Search Powered by Explorit Topic List Advanced Search Sample search results for: appliquer le taux Page: << < 1 2 3 4 5 > >> 1 2009 -Universit Paris VI Master 1 :...

266

E-Print Network 3.0 - activite le procede Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

le procede Search Powered by Explorit Topic List Advanced Search Sample search results for: activite le procede Page: << < 1 2 3 4 5 > >> 1 Departement de formation doctorale en...

267

5 Questions about the SunShot Prize for Minh Le - Solar Program...  

Office of Environmental Management (EM)

5 Questions about the SunShot Prize for Minh Le - Solar Program Manager at the U.S. Energy Department 5 Questions about the SunShot Prize for Minh Le - Solar Program Manager at the...

268

E-Print Network 3.0 - affectees par le Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

2005. Page n1. Feuille de TP n Summary: dans un fichier, dont le nom par defaut est matlab.mat, le contenu de certaines variables dont vous... Matlab, comme par exemple mean,...

269

E-Print Network 3.0 - associes dans le Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

partie, on compare le Tokomak ... explosif; d'autre part, le confinement d'un plasma peu dense dans un champ magntique. C'est la deuxime... voie qui nous intresse...

270

Thse prsente pour obtenir le grade de DOCTEUR DE L'COLE POLYTECHNIQUE  

E-Print Network (OSTI)

métallique ainsi que dans le semi-conducteur (ionisation par impact), et d'autre part le coefficient de-terminal configuration is analogous to a spin valve transistor in which the emitter is physically decoupled

Paris-Sud XI, Université de

271

Le procs pnal pour dlit de fraude fiscale et d'escroquerie la TVA Le procs pnal pour fraude fiscale se distingue d'emble du droit commun. Le dpt de plainte du ministre des Finances conditionne l'action  

E-Print Network (OSTI)

Le procès pénal pour délit de fraude fiscale et d'escroquerie à la TVA Le procès pénal pour fraude dossiers qui nécessitent d'être poursuivis pénalement. Le traitement pénal de la fraude fis- cale ne fraude fiscale (qui) ont fait l'objet d'une transmission à la Commission des infractions fiscales et 966

Paris-Sud XI, Université de

272

Cedar Creek Wind Farm II (GE) | Open Energy Information  

Open Energy Info (EERE)

Cedar Creek Wind Farm II (GE) Cedar Creek Wind Farm II (GE) Jump to: navigation, search Name Cedar Creek Wind Farm II (GE) Facility Cedar Creek II (GE) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner BP Wind Energy Developer BP Wind Energy Energy Purchaser Xcel Energy Location Weld County CO Coordinates 40.868652°, -104.092398° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.868652,"lon":-104.092398,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

273

7-GeV Advanced Photon Source Conceptual Design Report  

SciTech Connect

During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

Not Available

1987-04-01T23:59:59.000Z

274

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana U.

2013-04-01T23:59:59.000Z

275

12 GeV detector technology at Jefferson Lab  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (JLab) is presently in the middle of an upgrade to increase the energy of its CW electron beam from 6 GeV to 12 GeV along with the addition of a fourth experimental hall. Driven both by necessity and availability, novel detectors and electronics modules have been used in the upgrade. One such sensor is the Silicon Photomultiplier (SiPM), specifically a Multi-Pixel Photon Counter (MPPC), which is an array of avalanche photodiode pixels operating in Geiger mode that are used to sense photons. The SiPMs replace conventional photomultiplier tubes and have several distinct advantages including the safe operation in a magnetic field and the lack of need for high voltage. Another key to 12 GeV success is advanced fast electronics. Jlab will use custom 250 MHz and 125 MHz 12-bit analog to digital converters (ADCs) and time to digital converters (TDCs) all of which take advantage of VME Switched Serial (VXS) bus with its GB/s high bandwidth readout capability. These new technologies will be used to readout drift chambers, calorimeters, spectrometers and other particle detectors at Jlab once the 12 GeV upgrade is complete. The largest experiment at Jlab utilizing these components is GlueX - an experiment in the newly constructed Hall D that will study the photoproduction of light mesons in the search for hybrid mesons. The performance of these components and their respective detectors will be presented.

Leckey, John P. [Indiana University, Bloomington, IN 47405 (United States); Collaboration: GlueX Collaboration

2013-04-19T23:59:59.000Z

276

Charm Photoproduction Cross Section at 20 GeV  

Science Journals Connector (OSTI)

Forty-seven charm events have been observed in an exposure of the SLAC Hybrid Facility bubble chamber to a 20-GeV backward-scattered laser beam. Thirty-seven events survive all the necessary cuts imposed. Based on this number the total charm cross section is calculated to be 63-28+33 nb.

K. Abe et al. ((Stanford Linear Accelerator Center Hybrid Facility Photon Collaboration))

1983-07-18T23:59:59.000Z

277

SiGeCSi superlattice microcoolers Xiaofeng Fan,a)  

E-Print Network (OSTI)

stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and optoelectronic devices, but their pro- cessing is a bulk technology and is incompatible with inte- grated circuit fabrication process. Solid-state coolers mono- lithically integrated with microelectronic and optoelectronic

278

Radiation effects in Si-Ge quantum size structure (Review)  

SciTech Connect

The article is dedicated to the review and analysis of the effects and processes occurring in Si-Ge quantum size semiconductor structures upon particle irradiation including ion implantation. Comparisons to bulk materials are drawn. The reasons of the enhanced radiation hardness of superlattices and quantum dots are elucidated. Some technological applications of the radiation treatment are reviewed.

Sobolev, N. A., E-mail: sobolev@ua.pt [Universidade de Aveiro, Departamento de Fisica and I3N (Portugal)

2013-02-15T23:59:59.000Z

279

LE CALENDRIER MAYA Du XVIe au XIXe sicle, la domination exerce par les Espagnols sur la plus grande  

E-Print Network (OSTI)

par le terme wooj) s'étend également sur les �tats avoisinants de Chiapas et Tabasco, sur le Guatemala

Boyer, Edmond

280

Platon, La Rpublique, trad. Victor Cousin (1833). livre VII : le mythe de la caverne.  

E-Print Network (OSTI)

Platon, La République, trad. Victor Cousin (1833). livre VII : le mythe de la caverne. [514a, que les ombres qui vont se retracer, à la lueur du feu, sur le côté de la caverne exposé à leurs ? Assurément. Si maintenant on l'arrache de sa caverne malgré lui, et qu'on le traîne, par le sentier rude et

Aubin, David

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Archea ME LE Anlagenbau GmbH | Open Energy Information  

Open Energy Info (EERE)

ME LE Anlagenbau GmbH ME LE Anlagenbau GmbH Jump to: navigation, search Name Archea ME-LE Anlagenbau GmbH Place Torgelow, Mecklenburg-Western Pomerania, Germany Product Archea ME-LE Anlagenbau GmbH is a JV set up to manufacture and construct Archea biogas plants. Coordinates 53.629674°, 14.010779° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":53.629674,"lon":14.010779,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

282

Ouverture des portes : Plonge dans le Grand Bleu... Activits libres  

E-Print Network (OSTI)

Ouverture des portes : Plongée dans le Grand Bleu... Activités libres : · Présentations de nos ... Fermeture des portes 10h En Continu 17h 10h - 12h 14h - 15h 17h 15h - 17h Samedi 10 mai 2014 Portes ouvertes

283

Le code: specifiche e realizzazioni attraverso rappresentazioni sequenziali e collegate.  

E-Print Network (OSTI)

Bari "Aldo Moro" Nicola Di Mauro #12;Algoritmi e Strutture Dati ­ A.A. 13/14, N. Di Mauro 2 Le code Mauro 3 Specifica sintattica Tipi: coda, boolean, tipoelem Operatori: ­ creacoda: () coda ­ codavuota;Algoritmi e Strutture Dati ­ A.A. 13/14, N. Di Mauro 4 Specifica semantica Tipi: ­ coda: insieme delle

Di Mauro, Nicola

284

Graphene Enhanced Wireless Sensors Taoran Le, Trang Thai, Vasileios Lakafosis,  

E-Print Network (OSTI)

Graphene Enhanced Wireless Sensors Taoran Le, Trang Thai, Vasileios Lakafosis, Manos Tentzeris utilizing both analog and digital principles. The sensors will utilize Graphene-based thin films integrated. Our thin films are produced from water-based, inkjet printed graphene oxide (GO) on paper

Tentzeris, Manos

285

Molten salts and nuclear energy production Christian Le Bruna*  

E-Print Network (OSTI)

Molten salts and nuclear energy production Christian Le Bruna* a Laboratoire de Physique or chlorides) have been taken in consideration very soon in nuclear energy production researches with solid fuels, liquid fuel in molten salt reactor, solvents for spent nuclear solid fuel in the case

Boyer, Edmond

286

Pisa Dependable Computing Ente Per le Nuove Tecnologie,  

E-Print Network (OSTI)

in questa famiglia le FMEA (Failure Mode Effect Analysis). La seconda contiene i metodi che proce- dendo sistema al livello dei componenti. I fault-tree rappresentano un tipico esempio di tali metodi. 2.1 FMEA La FMEA é una tecnica induttiva il cui principio fondamentale é l'analisi, per ogni componente, degli

Firenze, Università degli Studi di

287

La Chine et le Japon : concurrents pour un hgmon rgional ?  

E-Print Network (OSTI)

Etats. En effet, la seule institution inter-étatique formelle, l'ASEAN, ne compte pas parmi ses membres existante, l'ASEAN, n'englobant ni la Chine ni le Japon, ne peut par conséquent être considéré comme la zone

Paris-Sud XI, Université de

288

e S le Se e Mirk ovic, Geetha Priya  

E-Print Network (OSTI)

A Self A e S le Se e Jelena Mirk ovic, Geetha Priya Venk ataramani, on , i ia han om ter cience e sensor fa lu res and str ngent energ onstra nts oseu n qu e des gn hallenges for data forward ng n w

California at Los Angeles, University of

289

LE CERVELET COMME PREDICTEUR Loc Sabarly, Bruno Delord, Stphane Genet  

E-Print Network (OSTI)

encore si les diverses fonctions motrices et cognitives auxquelles le cervelet participe reposent sur une) la copie des commandes motrices et les retours sensoriels sur leurs effets dans les entrées délivrées trace électrique de durée adaptive en réponse à une commande motrice phasique (iii) les rebonds de

Boyer, Edmond

290

Some thoughts on Le Cam's statistical decision theory David Pollard  

E-Print Network (OSTI)

Some thoughts on Le Cam's statistical decision theory by David Pollard Statistics Department Yale theory of statistical inference and decision theory. A short, self- contained proof of a key result developed a general theory for handling asymptotic problems in statistical decision theory. At the core

Pollard, David

291

THESE DE DOCTORAT Prsente pour obtenir le grade de  

E-Print Network (OSTI)

Modélisation des Composites Organiques (EMCO) du Département Matériaux et Systèmes Composites (DMSC) de l remerciements à Michel Bejet, pilier du bureau d'études du département DMSC, sans qui le nouveau dispositif de

Paris-Sud XI, Université de

292

Ben LePage, Ph.D. PECO Energy Company  

E-Print Network (OSTI)

, and biomass of plantation grown Metasequoia glyptostroboides in Japan. Forest Ecology and Management 180: 287.H. Johnson, M.M. Dranoff, B.A. LePage & C.J. Williams. 2008. Oxygen isotope ratios in fossil wood cellulose Metasequoia forests I. Test of a method for biomass determination based on stem dimensions. Paleobiology 29

Charles, Donald

293

Good Architecture = Good (ADL + Practices) Vincent Le Gloahec  

E-Print Network (OSTI)

Good Architecture = Good (ADL + Practices) Vincent Le Gloahec 1,3 , Regis Fleurquin 2 , and Salah of the software architecture. We treat rst the case of architecture design activity because it's the basis from the context of our indus- trial partner. Key words: Best Practices, Design, Software Architecture

Paris-Sud XI, Université de

294

se de doctorat en informatique Comprendre le Web cach  

E-Print Network (OSTI)

niveau à l'aide de telles descriptions. Abstract e hidden Web (also known as deep or invisible Web'informations, complexité Keywords: hidden Web, deep Web, databases, information extraction, complexity tel-00198150,versionèse de doctorat en informatique Comprendre le Web caché Understanding the Hidden Web Pierre

Paris-Sud XI, Université de

295

Self-assembling of Ge quantum dots in the CaF2/Ge/CaF2/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis  

Science Journals Connector (OSTI)

A CaF2/Ge/CaF2/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam ... , is 40–50 meV depending on the Ge dot size.

L. V. Sokolov; A. S. Deryabin; A. I. Yakimov…

2004-01-01T23:59:59.000Z

296

Nicolas Forcadel, Carole Le Guyader and Christian Gout Generalized Fast Marching Method  

E-Print Network (OSTI)

Nicolas Forcadel, Carole Le Guyader and Christian Gout Generalized Fast Marching Method,4 Carole Le Guyader, 5,6,7 Christian Gout Running title: GFMM: Applications to Image Segmentation@cemrics.enpc.fr, chris gout@cal.berkeley.edu, carole.le-guyader@insa-rennes.fr Abstract. In this paper, we propose

Soatto, Stefano

297

La Qualit l'ENSEEIHT Le Systme de Management de la qualit (ISO 9001)  

E-Print Network (OSTI)

La Qualité à l'ENSEEIHT Le Système de Management de la qualité (ISO 9001) En 3 mots : le Système de Management de la qualité (ISO 9001) - Le SMQ c'est : * Réaliser = Procédures, réaliser les activités (selon

Grigoras, .Romulus

298

The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.  

SciTech Connect

Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

2012-03-01T23:59:59.000Z

299

Recovery Act Helps GE in-source Manufacturing | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing Recovery Act Helps GE in-source Manufacturing September 30, 2010 - 2:21pm Addthis The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE The Geospring Hybrid Water Heater will be produced at GE's Appliance Park in Louisville. | Photo courtesy of GE Lindsay Gsell GE has a long history in Louisville, Ky. The company's appliance and lighting facility in Louisville has been manufacturing appliances for more than 50 years. Like many facilities, it has seen its share of ups-and-downs. Now, after a tough couple of years, the "Appliance Park" facility is making a "manufacturing" comeback -- with the help of the Recovery Act. The plant retooling project, partially funded through a 48C Advanced Energy

300

TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

74 - In the Matter of GE Appliances & Lighting 74 - In the Matter of GE Appliances & Lighting TEE-0074 - In the Matter of GE Appliances & Lighting This Decision and Order considers an Application for Exception filed by GE Appliances & Lighting (GE) seeking exception relief from the provision of 10 C.F.R. Part 430, Energy Conservation Program for Consumer Products: Energy Conservation Standards for Refrigerators, Refrigerator-Freezers and Freezers (Refrigerator Efficiency Standards). In its exception request, GE asserts that the firm would suffer a gross inequity if required to adhere to the Refrigerator Efficiency Standards codified at 10 C.F.R. § 430.32. If GE's Application for Exception were granted, GE would receive exception relief from the energy efficiency standard applicable to a new

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

10 Years ON: From the Lab to the Real World in 10 Years | GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

Biofuels Research at GE's Brazil Technology Center 2-3-10-v Crowdsourcing Software Platform Wins Award 2-1-10-v-working-at-ge-research The Dirt on the Cleanroom...

302

Characterization of the properties for phase-change material GeSb  

Science Journals Connector (OSTI)

Te-free environmentally friendly GeSb phase-change material has been investigated. Eutectic Ge15Sb85...composition, which has a proper high crystallization temperature of 230°C, is a good candidate for the applic...

Yifeng Gu; Ting Zhang; Zhitang Song; Yanbo Liu; Bo Liu; Songlin Feng

2010-04-01T23:59:59.000Z

303

Large inherent optical gain from the direct gap transition of Ge thin films  

E-Print Network (OSTI)

The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

Wang, Xiaoxin

304

E-Print Network 3.0 - amorphous ge-sb-te films Sample Search...  

NLE Websites -- All DOE Office Websites (Extended Search)

times in GeSbTe films irradiated... commercial phase-change optical recording systems, such as those based on GeSbTe Ref. 3 or AglnSbTe,4 use... the crystalline and...

305

AVTA: GE Energy WattStation AC Level 2 Charging System Testing...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

GE Energy WattStation AC Level 2 Charging System Testing Results AVTA: GE Energy WattStation AC Level 2 Charging System Testing Results The Vehicle Technologies Office's Advanced...

306

Phase and Shape Evolutions of Ion Beam Synthesized Ge Based Nanostructures  

E-Print Network (OSTI)

ion beam synthesized Ge nanocrystals," in Department of materials science and engineering:nanoscale engineering. In Chapter 5, ion beam and electronIon Beam Synthesized Ge Based Nanostructures by Swanee Shin Doctor of Philosophy in Engineering –

Shin, Swanee

2009-01-01T23:59:59.000Z

307

GE to DOE General Counsel; Re:Request for Comment on Large Capacity Clothes Washers  

Energy.gov (U.S. Department of Energy (DOE))

GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE...

308

EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois  

Energy.gov (U.S. Department of Energy (DOE))

This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

309

Molecular beam deposition of Al{sub 2}O{sub 3} on p-Ge(001)/Ge{sub 0.95}Sn{sub 0.05} heterostructure and impact of a Ge-cap interfacial layer  

SciTech Connect

We investigated the molecular beam deposition of Al{sub 2}O{sub 3} on Ge{sub 0.95}Sn{sub 0.05} surface with and without an ultra thin Ge cap layer in between. We first studied the atomic configuration of both Ge{sub 1-x}Sn{sub x} and Ge/Ge{sub 1-x}Sn{sub x} surfaces after deoxidation by reflection high-energy electron diffraction and resulted, respectively, in a c(4x2) and (2x1) surface reconstructions. After in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric we evidenced using time-of-flight secondary ion mass spectroscopy analyses that Sn diffusion was at the origin of high leakage current densities in the Ge{sub 1-x}Sn{sub x}/Al{sub 2}O{sub 3} gate stack. This damage could be avoided by inserting a thin 5-nm-thick Ge cap between the oxide and the Ge{sub 1-x}Sn{sub x} layer. Finally, metal-oxide-semiconductor capacitors on the Ge capped sample showed well-behaved capacitance-voltage (C-V) characteristics with interface trap density (D{sub it}) in the range of 10{sup 12} eV{sup -1} cm{sup -2} in mid gap and higher close to the valence band edge.

Merckling, C.; Franquet, A.; Vincent, B.; Vandervorst, W.; Loo, R.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001 Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001 Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Shimura, Y.; Takeuchi, S.; Nakatsuka, O.; Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2011-05-09T23:59:59.000Z

310

Sb surface segregation during epitaxial growth of SiGe heterostructures: The effects of Ge composition and biaxial stress  

Science Journals Connector (OSTI)

Antimony is the most widely used n-type dopant for Si molecular-beam epitaxy (MBE). However, because of surface segregation during growth, the control of doping profiles remains difficult. The case of Si/Si1-xGex heterostructures is complicated by the existence of stresses, which may affect both the thermodynamics and kinetics of segregation. In this study, we analyze the segregation of Sb resulting from the MBE growth of Si1-xGex/Si(100) heterostructures using secondary ion mass spectrometry as a function of (i) growth temperature (200 °C<~T°<~550 °C), (ii) germanium content (0<~x<~0.2), and (iii) stresses (compressively strained and relaxed layers). We show that Sb segregation: (i) increases with temperature, (ii) increases with Ge content in biaxially compressed layers, (iii) decreases with Ge content in relaxed layers. The temperature variation indicates that Sb surface segregation during growth is kinetically controlled. The contrasting behaviors observed as a function of Ge content in stressed and relaxed layers can thus be explained by a decrease of the segregation enthalpy induced by Ge addition and an increase of near-surface diffusion in stressed layers.

A. Portavoce; I. Berbezier; P. Gas; A. Ronda

2004-04-15T23:59:59.000Z

311

169Tm Mössbauer investigation of the compounds TmFe2Ge2 and TmCu2Ge2  

Science Journals Connector (OSTI)

Temperature-dependent169Tm Mössbauer measurements are reported for the ternary intermetallic compounds TmT2Ge2 (T=Fe, Cu). Based on comparison with results for their TmT2Si2 counterparts, it is verified that the ...

G. A. Stewart; P. W. Thompson; J. M. Cadogan; Hong-Shuo Li

1994-01-01T23:59:59.000Z

312

Submitted August 24, 2011 Published September 17, 2011 Propos le 24 aot 2011 Publi le 17 septembre 2011  

E-Print Network (OSTI)

the lighting effects in the underground cavern leaves the characters without shadows, like (says the narrator lumière dans la caverne souterraine font que (selon le narrateur) les personnages ressemblent à "ce) "ondes électriques" illuminating the underground cavern in which they find themselves: Par un phénomène

HarÂ?El, Zvi

313

Atomic structure of amorphous and crystallized Ge{sub 15}Sb{sub 85}  

SciTech Connect

Ge{sub 15}Sb{sub 85} is a promising material for phase-change memory applications owing to its very short crystallization times. As deposited amorphous samples of sputter deposited Ge{sub 15}Sb{sub 85} have been investigated by extended x-ray absorption fine structure (EXAFS) measurements on both, Sb and Ge K absorption edges. After crystallizing the specimen, x-ray diffraction (XRD) and EXAFS measurements have been performed to analyze the atomic structure at different annealing conditions. Thus, experimental techniques focusing on the long range order as well as on the local order have been combined. Sb atoms have on average 3.2(2) nearest neighbors, while Ge atoms have 4.0(3). The Ge-Ge and Ge-Sb bond lengths are determined to 2.46(2) and 2.66(1) A, respectively and agree well with those observed in the amorphous phase of the common phase-change material Ge{sub 2}Sb{sub 2}Te{sub 5}. After crystallizing the sample at 250 deg. C, very different EXAFS spectra with modified Ge-Sb bond lengths are observed. The higher concentration of Ge neighbors at the Ge edge as compared to the as-deposited sample is indicative for phase separation. For the corresponding sample, XRD does not show reflections of Ge, which indicates that the agglomeration of Ge is amorphous or below the coherence length of the x-radiation. The EXAFS spectrum shows a superposition of two phases: one with bond lengths which agree with sp{sup 3}-hybridized Ge [2.43(1) A] and another one with longer Ge-Ge bond lengths [2.79(8) A]. This result can be explained by phase separation in the material.

Zalden, Peter; Eijk, Julia van; Wuttig, Matthias [I. Physikalisches Institut (IA), RWTH Aachen, 52056 Aachen (Germany); Bichara, Christophe [CiNaM-Centre Interdisciplinaire de Nanoscience de Marseille, Campus de Luminy, 13288 Marseille (France); Braun, Carolin; Bensch, Wolfgang [Institut fuer Anorganische Chemie, Universitaet Kiel, Max-Eyth Str. 2, 24118 Kiel (Germany)

2010-05-15T23:59:59.000Z

314

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te  

E-Print Network (OSTI)

physica status solidi, 19 June 2012 Amorphous structures of Ge/Sb/Te alloys: Density functional functional simulations, Ge/Sb/Te alloys. Corresponding author: e-mail r.jones@fz-juelich.de, Phone: +49 discussed the alloy As30Ge10Si12Te48, and Te-based alloys have been well represented ever since. Alloys

315

Axion Detection with Germanium Detectors Hannah LeTourneau  

E-Print Network (OSTI)

of germanium detectors which will be used primarily to search for neutrinoless double beta decay, which would matter, and dark energy.[2] Neutrinoless double beta decay (0) is an energet- ically possible decay method for determining the crystal axis orientation of Ge detectors. I. BACKGROUND A. Neutrinoless Double

Washington at Seattle, University of - Department of Physics, Electroweak Interaction Research Group

316

Superlattice-like Ge8Sb92/Ge thin films for high speed and low power consumption phase change memory application  

Science Journals Connector (OSTI)

The amorphous-to-crystalline transitions of superlattice-like Ge8Sb92/Ge thin films were investigated through in situ film resistance measurement. X-ray reflectivity was used to measure the density change before and after phase change. The superlattice-like structure of the thin films was confirmed by using transmission electron microscopy. A picosecond laser pump–probe system was used to study the phase change speed. Phase change memory cells based on the SLL [Ge8Sb92(4 nm)/Ge(3 nm)]7 thin films were fabricated to test and verify the switching speed and operation consumption.

Yifeng Hu; Xiaoyi Feng; Jiwei Zhai; Ting Wen; Tianshu Lai; Sannian Song; Zhitang Song

2014-01-01T23:59:59.000Z

317

GE Lighting Solutions: Proposed Penalty (2013-SE-4901) | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Proposed Penalty (2013-SE-4901) Proposed Penalty (2013-SE-4901) GE Lighting Solutions: Proposed Penalty (2013-SE-4901) March 5, 2013 DOE alleged in a Notice of Proposed Civil Penalty that General Electric Lighting Solutions manufactured and distributed noncompliant traffic signal modules in the U.S. Federal law subjects manufacturers and private labelers to civil penalties if those parties distribute in the U.S. products that do not meet applicable energy conservation standards. This civil penalty notice advises the company of the potential penalties and DOE's administrative process, including the company's right to a hearing. GE Lighting Solutions: Proposed Penalty (2013-SE-4901) More Documents & Publications Watermark: Proposed Penalty (2011-SW-2908) Act One: NPCP (2013-CE-49001)

318

Capricorn Ridge (GE Energy) Wind Farm | Open Energy Information  

Open Energy Info (EERE)

Energy) Wind Farm Energy) Wind Farm Jump to: navigation, search Name Capricorn Ridge (GE Energy) Wind Farm Facility Capricorn Ridge (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner NextEra Energy Resources Developer NextEra Energy Resources Location TX Coordinates 31.838061°, -100.923965° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":31.838061,"lon":-100.923965,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

319

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular-beam epitaxy of Ge on Ge(001) and subsequent annealing. We find that there is a critical ''kinetic roughening'' temperature (375 /sup 0/C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with a third-order power-law ripening mechanism.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1989-03-01T23:59:59.000Z

320

Dynamics of growth roughening and smoothening on Ge (001)  

SciTech Connect

We present reflection high-energy electron diffraction measurements of the evolution of surface morphology during molecular beam epitaxy of Ge on Ge (001) and subsequent annealing. We find that there is a critical ''growth roughening'' temperature (375 C) above which a smooth surface remains smooth during growth, but below which it roughens during growth. Surprisingly, smooth starting surfaces never appear to roughen without bound, but reach steady-state roughnesses which depend on temperature and deposition rate. The results can be fit empirically with simple phenomenological equations based on a competition between growth roughening and growth smoothening of a ''pseudo-statistical'' surface. Furthermore, growth-roughened surfaces tend to smoothen, after growth, at a rate consistent with an Ostwald-like ripening mechanism. 4 figs.

Chason, E.; Tsao, J.Y.; Horn, K.M.; Picraux, S.T.

1988-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Proton-proton Scattering Above 3 GeV/c  

SciTech Connect

A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

2010-01-01T23:59:59.000Z

322

Meson Spectroscopy at JLab@12 GeV  

SciTech Connect

Meson, being the simplest hadronic bound system, is the ideal "laboratory" to study the interaction between quarks, to understand the role of the gluons inside hadrons and to investigate the origin of color confinement. To perform such studies it is important to measure the meson spectrum, with precise determination of resonance masses and properties, looking for rare qbar q states and for unconventional mesons with exotic quantum numbers (i.e. mesons with quantum numbers that are not compatible with a qbar q structure). With the imminent advent of the 12 GeV upgrade of Jefferson Lab a new generation of meson spectroscopy experiments will start: "Meson-Ex" in Hall B and "GLUEX" in Hall D. Both will use photo-production to explore the spectrum of mesons in the light-quark sector, in the energy range of few GeVs.

Celentano, Andrea [INFN-GENOVA

2013-03-01T23:59:59.000Z

323

Inclusive photoproduction of strange baryons at 20 GeV  

Science Journals Connector (OSTI)

Cross sections are presented for the inclusive photoproduction of KS0, ?, ?¯, ?-, ?¯ -, ?0, and ?*±(1385) at 20 GeV. An upper limit to ?- production is also given. The data come from 284 000 hadronic events photoproduced in the SLAC 1-m hydrogen-bubble-chamber hybrid facility exposed to a nearly monochromatic, polarized 20-GeV backscattered photon beam. A comparison of the KS0, ?, ?¯, and ?- rates per inelastic event to ?±p data show that ?p rates are consistent with being higher than the ?±p rates, providing evidence of an ss¯ component of the photon. The pair cross sections for KS0KS0, KS0?, KSo?¯, and ??¯ are presented. The xF distributions of the ?, ?¯, and ?- are compared to a quark-diquark fusion model, giving information on strange-baryon photoproduction mechanisms.

K. Abe et al.

1985-12-01T23:59:59.000Z

324

Ge/Si core/multi shell heterostructure FETs  

SciTech Connect

Concentric heterostructured materials provide numerous design opportunities for engineering strain and interfaces, as well as tailoring energy band-edge combinations for optimal device performance. Key to the realization of such novel device concepts is the complete understanding and full control over their growth, crystal structure, and hetero-epitaxy. We report here on a new route for synthesizing Ge/Si core/multi-shell heterostructure nanowires that eliminate Au seed diffusion on the nanowire sidewalls by engineering the interface energy density difference. We show that such control over core/shell synthesis enable experimental realization of heterostructure FET devices beyond those available in the literature with enhanced transport characteristics. We provide a side-by-side comparison on the transport properties of Ge/Si core/multi-shell nanowires grown with and without Au diffusion and demonstrate heterostructure FETs with drive currents that are {approx} 2X higher than record results for p-type FETs.

Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

325

Structure of odd Ge isotopes with 40 < N < 50  

SciTech Connect

We have interpreted recentlymeasured experimental data of {sup 77}Ge, and also for {sup 73,75,79,81}Ge isotopes in terms of state-of-the-art shell-model calculations. Excitation energies, B(2) values, quadrupole moments and magnetic moments are compared with experimental data when available. The calculations have been performed with the recently derived interactions, namely with JUN45 and jj44b for f{sub 5/2pg9/2} space. We have also performed calculation for fpg{sub 9/2} valence space using an fpg effective interaction with {sup 48}Ca core and imposing a truncation to study the importance of the proton excitations across the Z = 28 shell in this region. The predicted results of jj44b interaction are in good agreement with experimental data.

Srivastava, P. C., E-mail: praveen.srivastava@nucleares.unam.mx; Ermamatov, M. J. [Universidad Nacional Autonoma de Mexico, Instituto de Ciencias Nucleares (Mexico)

2013-06-15T23:59:59.000Z

326

Evaporation-based Ge/.sup.68 Ga Separation  

DOE Patents (OSTI)

Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

1981-01-01T23:59:59.000Z

327

Partners for progress in HVDC: GE and EPRI  

SciTech Connect

Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

1983-01-01T23:59:59.000Z

328

L'INITIATIVE EUROPEENNE "SUIVI GLOBAL POUR L'ENVIRONNEMENT ET LA SECURITE" (GMES) ET LE PROTOCOLE DE KYOTO1  

E-Print Network (OSTI)

, Belgique H. LE TREUT, UPMC, France A. MOREL, LPCM, France E. RASCHKE, GKSS Forschungszentrum Geesthacht

329

Milford Wind Corridor Phase I (GE Energy) | Open Energy Information  

Open Energy Info (EERE)

form form View source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon » Milford Wind Corridor Phase I (GE Energy) Jump to: navigation, search Name Milford Wind Corridor Phase I (GE Energy) Facility Milford Wind Corridor Phase I (GE Energy) Sector Wind energy Facility Type Commercial Scale Wind Facility Status In Service Owner First Wind Developer First Wind Energy Purchaser Southern California Public Power Authority Location Milford UT Coordinates 38.52227°, -112.935262° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":38.52227,"lon":-112.935262,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

330

GeV emission from Gamma-Ray Burst afterglows  

E-Print Network (OSTI)

We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

A. Panaitescu

2008-01-10T23:59:59.000Z

331

Axial Ge/Si nanowire heterostructure tunnel FETs.  

SciTech Connect

Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

2010-03-01T23:59:59.000Z

332

Le Flore County, Oklahoma: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Le Flore County, Oklahoma: Energy Resources Le Flore County, Oklahoma: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 34.8622042°, -94.645035° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":34.8622042,"lon":-94.645035,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

333

CORROSION INTERGRANULAIRE SUR LE MCANISME DE LA CORROSION INTERGRANULAIRE  

E-Print Network (OSTI)

CORROSION INTERGRANULAIRE SUR LE M�CANISME DE LA CORROSION INTERGRANULAIRE DES MAT�RIAUX'article est consacré à l'étude des phénomènes de corrosion intergranulaire présentés par les métaux et corrosion intergranulaire correspond à une dissolution préférentielle des zones d'émergence des joints de

Paris-Sud XI, Université de

334

Mons, le 27 fvrier 2012 Collaboration UCL Mons -HELHa  

E-Print Network (OSTI)

, à la clé, la mise sur pied d'une campagne pour un produit de type non marchand. Cette année, le. Celle-ci aura pour thème « La communication du non-marchand à l'heure du numérique. Quelles tactiques), Jean-Marie Pierlot (maitre de conférence et expert en communication du non-marchand, UCL), Philippe

Nesterov, Yurii

335

Paris, le 7 novembre 2013 Communiqu de presse  

E-Print Network (OSTI)

'EMBL, Lorient Agglomération, la Fondation EDF ainsi que d'autres partenaires privés et publics, cette expédition laboratoires pendant des années mais en 2013, quatre ans après le début de Tara Oceans, huit publications final inédit à l'inauguration des illuminations de Noël de la Ville. Eclairage évènementiel du site et

336

De Gaulle en Iran (octobre 1963): Le voyage oubli.  

E-Print Network (OSTI)

De Gaulle en Iran (octobre 1963): Le voyage oublié. Dernière version avant publication dans la nouveau "normales" entre les démocraties occidentales et l'Iran. L'accession au pouvoir du modéré Khatami'esquisser en Iran. Une longue parenthèse serait ainsi appelée à se résorber, permettant de relancer

Paris-Sud XI, Université de

337

Explorer des actualites multimedia dans le web de donnees  

E-Print Network (OSTI)

Explorer des actualit´es multim´edia dans le web de donn´ees Rapha¨el Troncy1 CWI Amsterdam´ecifiques au multim´edia peuvent ^etre utilis´es conjoin- tement mais cela pose des probl`emes d et naviguer dans des contenus multim´edia d'ac- tualit´es contextualis´es. Nous pr´esentons une

Paris-Sud XI, Université de

338

Enhanced Ge/Si(001) island areal density and self-organization due to P predeposition  

SciTech Connect

The predeposition of P, with coverages {theta}{sub P} ranging from 0 to 1 ML, on Si(001) significantly increases both the areal density and spatial self-organization of Ge islands grown by gas-source molecular beam epitaxy from hydride precursors. The Ge island density {rho}{sub Ge} initially increases with {theta}{sub P}, reaching a maximum of 1.4 x 10{sup 10} cm{sup -2} at {theta}{sub P} = 0.7 ML, a factor of four times higher than on bare Si(001) under the same deposition conditions, before decreasing at higher P coverages. The increase in {rho}{sub Ge}({theta}{sub P}) is due to a corresponding decrease in Ge adatom mean free paths resulting from passivation of surface dangling bonds by adsorbed pentavalent P atoms which, in addition, leads to surface roughening and, therefore, higher Ge coverages at constant Ge{sub 2}H{sub 6} dose. As {theta}{sub P} (and hence, {rho}{sub Ge}) increases, so does the degree of Ge island ordering along <100> directions due to the anisotropic strain field surrounding individual islands. Similar results are obtained for Ge island growth on P-doped Si(001) layers where strong P surface segregation provides partial monolayer coverage prior to Ge deposition.

Cho, B.; Bareno, J.; Petrov, I.; Greene, J. E. [Materials Science Department and the Frederick-Seitz Materials Research Laboratory, University of Illinois, 104 South Goodwin Ave., Urbana, Illinois 61801 (United States)

2011-05-01T23:59:59.000Z

339

Aqueous germanate ion solution promoted synthesis of worm-like crystallized Ge  

Science Journals Connector (OSTI)

This work demonstrates that it is possible to synthesize crystallized Ge nanostructures directly in an aqueous medium under ambient conditions by using widely available GeO2 (in the form of germanate ions) as a precursor. The reaction of germanate ions with NaBH4 in an aqueous medium resulted in highly hydrogenated Ge that could be transformed into crystallized Ge after an air-drying treatment. The NaBH4/GeO2 molar ratio, reaction time and drying temperature were optimized for the synthesis of crystallized Ge products. Furthermore, the reaction time has an influence on the size and shape of the final crystallized Ge products. A reaction time of 12 h could result in crystallized Ge powder samples that contain ultra-small (5–20 nm) particles and larger (50–100 nm) particles. By controlling the reaction time to 24 h, a Ge powder product consisting of worm-like crystallized Ge nanostructures with diameters of 10–80 nm and lengths up to 1000 nm was obtained. The possible reaction and growth mechanisms involved in this method were investigated. This new synthetic route may be a good candidate for synthesizing a wide variety of crystallized Ge nanomaterials and devices due to its low cost, low safety risk, facileness, high yield (above 70% and in gram scale) and convenience for adding other chemicals (i.e. dopants or morphology modifying agents) into the reaction system.

Chengbin Jing; Xiaodan Zang; Wei Bai; Junhao Chu; Aiyun Liu

2009-01-01T23:59:59.000Z

340

Un atlas smantique pour le cerveau Un des buts principaux de ce projet est le dveloppement d'un outil qui permettra  

E-Print Network (OSTI)

Un atlas sémantique pour le cerveau Un des buts principaux de ce projet est le développement d construire des représentations sémantiques à partir de large corpus de textes (les Atlas sémantiques (AS

Institut des Sciences Cognitives, CNRS

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Band-structure calculations for Ba6Ge25 and Ba4Na2Ge25 clathrates  

Science Journals Connector (OSTI)

Electronic band structures for Ba6Ge25 and Ba4Na2Ge25 clathrates are calculated using linear muffin-tin orbital method within the local-density approximation. It is found that barium states strongly contribute to the density of states at the Fermi level and thus can influence the transport properties of the compounds. A sharp peak of the density of states is found just at the Fermi level. It is also shown that the shifting of barium atoms toward experimentally deduced split positions in Ba6Ge25 produces a splitting of this peak which may be interpreted as a band Jahn-Teller effect. If the locking of the barium atoms at the observed structural phase transition is assumed, this reduction of the density of states at the Fermi level can account for the experimentally observed decrease of the magnetic susceptibility and electrical resistivity at the phase transition, and the values of density of states are in agreement with low-temperature specific-heat measurements and variation of superconducting transition temperature with pressure.

Ivica Zerec; Alexander Yaresko; Peter Thalmeier; Yuri Grin

2002-07-29T23:59:59.000Z

342

Le CAS s'intresse au contrle des systmes de toute nature (mcanique, chimique, lectrique...). Le but est  

E-Print Network (OSTI)

); · Automobile (J. Lévine, P. Rouchon); · Contrôle des procédés (J. Lévine, N. Petit, P. Rouchon); · Machines capteur et iden- tification de moteurs asynchrones (Schneider Electric), rentrée dans l'atmosphère d'un engin spatial (CNES), climatisation bas-coût d'habitacle automobile (Valéo- Electronique), stabilisation

343

Determination of70Ge(n,p)70Ga and74Ge(n,p)74Ga reaction cross sections for a fission neutron spectrum  

Science Journals Connector (OSTI)

The fission neutron spectrum averaged cross-sections for the reactions70Ge(n,p)70Ga and74Ge(n,p)74Ga have been determined. The averages of four determinations are, respectively, (3.10±0.30) mb and (0.00938±0.0005...

I. M. Cohen; A. J. Kestelman; J. C. Furnari…

1996-03-14T23:59:59.000Z

344

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature  

SciTech Connect

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Fukuda, Yukio; Otani, Yohei [Tokyo University of Science, Suwa, 5000-1 Toyohira, Chino, Nagano 391-0292 (Japan); Okamoto, Hiroshi; Iwasaki, Takuro; Ono, Toshiro [Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561 (Japan)

2011-09-26T23:59:59.000Z

345

Electrical, optical, and thermal properties of Sn-doped phase change material Ge2Sb2Te5  

Science Journals Connector (OSTI)

In this article, effect of Sn on the electrical, optical, and thermal properties of Ge2Sb2Te5 is studied. Ge2Sb2Te5, Ge1.55Sb2Te5Sn0.45, and Ge1.1Sb2Te5Sn0.9...alloys are prepared by melt quenching technique and ...

Gurinder Singh; Aman Kaura; Monika Mukul; S. K. Tripathi

2013-01-01T23:59:59.000Z

346

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films  

SciTech Connect

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

2014-03-18T23:59:59.000Z

347

Structural characterization of SiGe/Si single wells grown by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature  

Science Journals Connector (OSTI)

Structural properties of SiGe/Si single wells are studied by double-crystal X-ray diffraction. Four SiGe/Si single wells have been grown on Si (0 0 1) at 750°C by disilane and solid-Ge molecular beam epitaxy with varied disilane cracking temperature. Using dynamic theory, together with kinematic theory and the specific growth procedure adopted, structural parameters in the multilayer structure are determined precisely. The results are compared with those obtained from PL and XTEM as well as AES measurements. It is found that disilane adsorption is dependent on cracking temperature as well as Ge incorporation. Disilane adsorption is increased by cracking disilane while it decreased with Ge incorporation

J.P. Liu; M.Y. Kong; D.D. Huang; J.P. Li; D.Z. Sun

1998-01-01T23:59:59.000Z

348

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

349

Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers  

SciTech Connect

One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

2013-10-15T23:59:59.000Z

350

Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height  

SciTech Connect

In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

2013-12-16T23:59:59.000Z

351

Forward charge asymmetry in 20-GeV gammap reactions  

Science Journals Connector (OSTI)

Fast forward particles photoproduced in 20-GeV interactions on a hydrogen target are shown to be preferentially positive, the asymmetry increasing with transverse momentum and Feynman x. Evidence is given that this effect is not due to forward-going target fragments. A model in which production from the photon of a forward-going spectator u is preferred over a ?, due to a higher probability for interactions of antiquarks with the proton constituents, is shown to be qualitatively consistent with the data.

V. R. O’Dell et al.

1987-07-01T23:59:59.000Z

352

Diamond turning of Si and Ge single crystals  

SciTech Connect

Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

Blake, P.; Scattergood, R.O.

1988-12-01T23:59:59.000Z

353

6 GeV light source project cost estimating procedure  

SciTech Connect

To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV Light Source, the following procedure will be used by all the task groups. The procedure uses a Work Breakdown Structure (VBS) to break down the project into manageable, easy to estimate, components. The project is first broken down into major tasks or categories. Then each major division is continuously subdivided until the desired level of detail is achieved. This can be shown best by using the example of the WBS of the Aladdin Upgrade Project, excerpts of which are included in Appendix A.

NONE

1985-10-23T23:59:59.000Z

354

An 8-GeV Synchrotron-Based Proton Driver  

SciTech Connect

In January 2002, the Fermilab Director initiated a design study for a high average power, modest energy proton facility. Such a facility is a possible candidate for a construction project in the U.S. starting in the middle of this decade. The key technical element is a new machine, dubbed the ''Proton Driver,'' as a replacement of the present Booster. The study of an 8-GeV synchrotron-based proton driver has been completed and published. This paper will give a summary report, including machine layout and performance, optics, beam dynamics issues, technical systems design, civil construction, cost estimate and schedule.

Weiren Chou

2003-06-04T23:59:59.000Z

355

LE CASSE-TTE DE L'ETAT CHINOIS : ENCOURAGER LA CONSOMMATION AUTOMOBILE EN DECOURAGEANT LA  

E-Print Network (OSTI)

LE CASSE-T�TE DE L'ETAT CHINOIS : ENCOURAGER LA CONSOMMATION AUTOMOBILE EN DECOURAGEANT LA CONSOMMATION D'ENERGIE Julien ALLAIRE1 Revue de l'énergie n°564 Février 2005 Résumé: Le marché automobile article nous revenons sur les dynamiques du marché automobile chinois depuis le nouveau millénaire. Nous

Boyer, Edmond

356

Territoire, bien-tre et inclusion sociale, Confrences cadres LE SYSTEME REGIONAL D'INNOVATION  

E-Print Network (OSTI)

Territoire, bien-être et inclusion sociale, Conférences cadres 26 LE SYSTEME REGIONAL D'INNOVATION la période fordiste, l'innovation y est analysée comme le résultat d'un produit social et)" #12;Territoire, bien-être et inclusion sociale, Conférences cadres 27 Le système régional d'innovation

Boyer, Edmond

357

Preparation `a l'Agregation Interne 2013, Correction du probl`eme sur le laplacien discret.  

E-Print Network (OSTI)

N - idN est N - (N - 2) = 2. A.4.a. Soit v RN , pour i {1, . . . , N} on note Mi le point de coordonn´ees (xi, yi) = (i, vi). Si v est harmonique, alors pour tout i {2, . . . , N - 1} le point Mi est le milieu du segment [Mi-1, Mi+1] et donc les points Mi-1, Mi et Mi+1 sont align´es. Comme les points de V

Champion, Thierry

358

Le theor`eme d'adequation Cours du jeudi 19 septembre  

E-Print Network (OSTI)

Le th´eor`eme d'ad´equation Cours du jeudi 19 septembre Dans le meilleur des mondes, les th´eor`emes du syst`eme formel L de- vraient ^etre exactement les tautologies. Le th´eor`eme d'ad´equation montre´EFINITION 0.2 Une formule bf A de L est une tautologie si pour toute valua- tion v de L, v(A) = V. TH ´EOR

Rousseau, Christiane

359

COLE DES HAUTES TUDES EN SCIENCES SOCIALES pour obtenir le grade de  

E-Print Network (OSTI)

!: Le Miroir et le Crâne Le parcours rituel de la société initiatique Bwete Misoko (Gabon) Directeur de particulièrement!: ­!au Gabon, Georges Salaun pour son hospitalité indéfectible!; les membres du Laboratoire transcription des termes vernaculaires, j'utilise l'Alphabet Scientifique du Gabon, élaboré à partir de l

Paris-Sud XI, Université de

360

Le mythe Al-Zarqawi ou la lgitimation de la guerre en Iraq  

E-Print Network (OSTI)

1 Le mythe Al-Zarqawi ou la légitimation de la guerre en Iraq __________________ Le 20 mars 2003 au-Unis et leurs alliés contre l'Iraq. Tous les éléments concordent pour diaboliser le pouvoir de Saddam Hussein et pour légitimer, aux yeux du monde, une intervention armée en Iraq. Face à cet « �tat

Paris-Sud XI, Université de

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While these samples are representative of the content of NLEBeta,
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361

E-Print Network 3.0 - avec le rayonnement Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

'abaissement du potentiel explosif. - Les plus actifs sont la lu- mire ultra-violette, le rayonnement du radium... (). Avec les autres ... Source: Ecole...

362

E-Print Network 3.0 - ains dans le Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

dans notre esp'erance math'ematique, ... Source: Lass, Bodo - Institut Camille Jordan, Universit Claude Bernard Lyon-I Collection: Mathematics 5 Dans le probleme de la...

363

E-Print Network 3.0 - avec le projet Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Search Sample search results for: avec le projet Page: << < 1 2 3 4 5 > >> 1 Institut Farman : Appel projets 2011 Les projets peuvent prendre plusieurs formes : jeunes chercheurs,...

364

E-Print Network 3.0 - apres le systeme Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

miComplesdeiSistemrloStudioCentroperMocenni-ChiaraM 12;le2010... 2010ssi,16Apr The elephant in the dark (12) ... Source: Garulli, Andrea - Dipartimento di Ingegneria...

365

Pour obtenir le grade de DOCTEUR DE L'UNIVERSIT DE GRENOBLE  

E-Print Network (OSTI)

professeurs et ami(e)s français, dans ma langue maternelle (Le Persan), je trouverais les mots jutes pour leur

Paris-Sud XI, Université de

366

E-Print Network 3.0 - autorise le redemarrage Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

on pourra decrire precisement la loi apres redemarrage... EGINE MARCHAND Resume. Le but de cet article ... Source: Ecole Polytechnique, Centre de...

367

Thse de Doctorat en vue d'obtenir le grade de  

E-Print Network (OSTI)

couplages de type Ugi et nouvelles réactions de post-condensations Présentée et soutenue publiquement le 30

Paris-Sud XI, Université de

368

De l’humanisme au posthumanisme : le destin du corps  

Science Journals Connector (OSTI)

Résumé L’humanisme aurait-il fait son temps ? Comment vivre au milieu des autres quand l’humain devient une sorte de résultante entre nature et biotechnologies ? Ne faut-il pas abandonner notre nature si fragile pour advenir à une posture inaltérable, voire dématérialisée ? Le corps semble bien être la prison de l’âme pour certains contemporains qui envisagent donc sa désintégration. Notre propos tente de montrer combien cette tentative de fusion dans un grand tout, renvoie à une profonde dépression de l’être ou un refus conscient ou non de se réaliser, voire d’assumer sa condition. Le monde transhumain est un monde où les nanorobots détruiront les agents pathogènes, les erreurs ADN voire élimineront les toxines. Ainsi, l’homme pourra se décliner sous une nouvelle version v 2.0. Est-ce une fin en soi ? Que dire alors à celles et ceux qui semblent aspirés par cette dynamique si ce n’est que c’est peut être la fragilité de la naissance, la beauté du développement et de la vie qui est le cœur de notre humanité ? Summary Is it the end of Humanism? How can we actually live together, when human want to be a patchwork mixing nature and biotechnologies? Many people seem to give up their weakness and hope in a new unaffected situation. As body seems to be jail of soul, people want to split it. Our purpose tries to explain the reasons of this paradoxal course. Transhumanism is related to depression and conscious or unconscious refusal to assume their conditions. How can we help people who consider this evolution as an end as itself? What can we tell to them, if the fragility of the birth and the beauty of development are the core of the human being?

J.-M. Besnier

2012-01-01T23:59:59.000Z

369

Surface passivation of the Ge substrate by novel nitrogen plasma immersion treatment  

Science Journals Connector (OSTI)

In this paper, a novel nitrogen plasma immersion treatment (NNPIT) with accelerating power for Ge surface passivation is presented and compared with conventional nitrogen plasma immersion treatment (NPIT). Results show that the Ge–N bond formed at a surface by NPIT can suppress the growth of Ge suboxide during high-K dielectric deposition. As for NNPIT, more nitrogen plasma drifts to the Ge surface, which is induced by the accelerating electric field, to enhance the dangling bond passivation, and thus the NNPIT method can further suppress Ge suboxide growth during high-K dielectric deposition. As a result, the C–V characteristics in terms of a flat-band voltage, hysteresis and interface state density can be significantly improved, which is promising for high performance Ge MOSFETs fabrication.

Meng Lin; Ming Li; Xia An; Quanxin Yun; Min Li; Zhiqiang Li; Pengqiang Liu; Xing Zhang; Ru Huang

2013-01-01T23:59:59.000Z

370

Germanium diffusion during HfO{sub 2} growth on Ge by molecular beam epitaxy  

SciTech Connect

The authors study the Ge diffusion during HfO{sub 2} growth by molecular beam epitaxy on differently in situ prepared germanium substrates and at different growth temperatures. While HfO{sub 2} layers grown directly on Ge do not show any germanium contamination, oxygen rich interfacial layers such as GeO{sub x} or GeO{sub x}N{sub y} partly dissolve into the HfO{sub 2} layer, giving rise to high Ge contamination (from 1% to 10%). The use of nitridated interfacial layers does not prevent Ge diffusion into the HfO{sub 2} during the growth process because of the high oxygen content present in the nitridated germanium layer.

Ferrari, S.; Spiga, S.; Wiemer, C.; Fanciulli, M.; Dimoulas, A. [Laboratorio MDM-INFM-CNR, Via Olivetti, 2 Agrate Brianza, Milano 20041 (Italy); MBE Laboratory, Institute of Materials Science, DEMOKRITOS National Center for Scientific Research, 153 10 Athens (Greece)

2006-09-18T23:59:59.000Z

371

Ge doped HfO{sub 2} thin films investigated by x-ray absorption spectroscopy  

SciTech Connect

The stability of the tetragonal phase of Ge doped HfO{sub 2} thin films on Si(100) was investigated. Hf(Ge)O{sub 2} films with Ge atomic concentrations varying from 0% to 15% were deposited by remote plasma chemical vapor deposition. The atomic structure on the oxide after rapid thermal annealing was investigated by x-ray absorption spectroscopy of the O and Ge K edges and by Rutherford backscattering spectrometry. The authors found that Ge concentrations as low as 5 at. % effectively stabilize the tetragonal phase of 5 nm thick Hf(Ge)O{sub 2} on Si and that higher concentrations are not stable to rapid thermal annealing at temperatures above 750 deg. C.

Miotti, Leonardo; Bastos, Karen P.; Lucovsky, Gerald; Radtke, Claudio; Nordlund, Dennis [Department of Physics, North Carolina State University, Box 8202, Raleigh, North Carolina 27695-8202 (United States); Instituto de Quimica, Universidade Federal do Rio Grande do Sul, 91509-900 Porto Alegre (Brazil); Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025 (United States)

2010-07-15T23:59:59.000Z

372

Observation of optical spin injection into Ge-based structures at room temperature  

SciTech Connect

Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan)] [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yaguchi, Hiroyuki [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)] [Graduate School of Science and Engineering, Saitama University, Shimo-Okubo 255, Sakura, Saitama 338-8570 (Japan)

2013-06-17T23:59:59.000Z

373

Structural and magnetic properties of Ge{sub 1-x}Mn{sub x} thin films grown on Ge (001) substrates  

SciTech Connect

We investigate the structural and magneto-optical properties of Mn-doped Ge (Ge{sub 1-x}Mn{sub x}) films with self-organized nanocolumns, grown on Ge (001) substrates by molecular beam epitaxy (MBE), in which the substrate temperature (T{sub S}) and growth rate (R{sub G}) are varied. Transmission electron microscopy (TEM) observations and magnetic circular dichroism (MCD) measurements reveal that Mn-rich nanocolumnar precipitation is formed in the Ge{sub 1-x}Mn{sub x} films grown at T{sub S} {<=} 100 deg. C, with keeping the size and spacing. At higher T{sub S} ({>=}150 deg. C), ferromagnetic Mn{sub 5}Ge{sub 3} clusters are formed. It is also found that the Mn distribution in the Ge{sub 1-x}Mn{sub x} films can be controlled: By lowering T{sub S} or increasing R{sub G}, the Mn content x{sub nc} in the nanocolumns decreases and Mn atoms are more distributed into the Ge matrix, and eventually the magnetic properties are changed. The formation of the nanocolumns is explained by the spinodal decomposition in the layer-by-layer growth mode. We analyzed the periodicity and Mn content x{sub nc} of nanocolumns by using the Cahn-Hilliard equation.

Yada, Shinsuke; Nam Hai, Pham; Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Sugahara, Satoshi [Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259-G2-14 Nagatsuta, Yokohama, Kanagawa 226-8502 (Japan)

2011-10-01T23:59:59.000Z

374

Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells  

SciTech Connect

Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

Fan, W. J., E-mail: ewjfan@ntu.edu.sg [NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2013-11-14T23:59:59.000Z

375

Vermont Yankee's benefits and concerns operating with Axially zoned GE9 fuel  

SciTech Connect

Vermont Yankee (VY) is a 368-assembly, D-lattice, boiling water reactor (BWR)/4. The current cycle 16 contains 252 GE9 assemblies with axial zoning of gadolinium and enrichment, 112 GE8 assemblies with axially zoned gadolinium, and 4 Siemens 9 x 9-IX lead qualification assemblies. In this paper, the performance of the GE9-dominated core is evaluated against previous cores containing less sophisticated fuel designs.

Woehlke, R.A. (Yankee Atomic Electric Co., Bolton, MA (United States))

1993-01-01T23:59:59.000Z

376

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I  

E-Print Network (OSTI)

Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

377

Le marchand tranger face la crise : dpart ou intgration ? Le cas de la colonie franaise de Cadix aux priodes rvolutionnaire et  

E-Print Network (OSTI)

1 Le marchand étranger face à la crise : départ ou intégration ? Le cas de la colonie française de fiables sur les marchés lointains était une nécessité pour tous les marchands participant aux échanges reconversion des négociants, mais également le problème plus spécifique du niveau d'intégration des marchands

Paris-Sud XI, Université de

378

12 GeV Upgrade Project - Cryomodule Production  

SciTech Connect

The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

2012-07-01T23:59:59.000Z

379

Phase-change optical recording materials based on GeSb  

Science Journals Connector (OSTI)

GeSb based materials are investigated for phase-change optical recording. Physical properties and amorphization / crystallization behavior are determined. Recording characteristics are...

Dimitrov, Dimitre

380

€18.5 Million in New Research Program Funding Announced, GE...  

NLE Websites -- All DOE Office Websites (Extended Search)

funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Using 3D Painting to Build and Repair Parts | GE Global Research  

NLE Websites -- All DOE Office Websites (Extended Search)

a part or add material to repair an existing part. Cold spray is part of GE's expanded additive manufacturing toolkit. nteneh Kebbede, Manager of the Coating and Surface...

382

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy  

E-Print Network (OSTI)

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

2008-01-01T23:59:59.000Z

383

Nano scale phase separation in Au-Ge system on ultra clean Si(100) surfaces  

SciTech Connect

We report on the phase separation in Au-Ge system leading to the formation of lobe-lobe (bi-lobed) Au-Ge nanostructures under ultra high vacuum (UHV) conditions ({approx_equal}3 x 10{sup -10} mbar) on clean Si(100) surfaces. For this study, {approx_equal}2.0 nm thick Au samples were grown on the substrate surface by molecular beam epitaxy. Thermal annealing was carried out inside the UHV chamber at temperature {approx_equal}500 deg. C and following this, nearly square shaped Au{sub x}Si{sub 1-x} nano structures of average length {approx_equal}48 nm were formed. A {approx_equal}2 nm Ge film was further deposited on the above surface while the substrate was kept at a temperature of {approx_equal}500 deg. C. Well ordered Au-Ge nanostructures where Au and Ge residing side by side (lobe-lobe structures) were formed. In our systematic studies, we show that, gold-silicide nanoalloy formation at the substrate (Si) surface is necessary for forming phase separated Au-Ge bilobed nanostructures. These results show that the Au-Ge bonding is unstable in nature. Electron microscopy (TEM, STEM-EDS, SEM) studies were carried out to determine the structure of Au-Ge nano systems. Rutherford backscattering spectrometry measurements show gold inter-diffusion into substrate while it is absent for Ge.

Rath, A.; Dash, J. K.; Juluri, R. R.; Satyam, P. V. [Institute of Physics, Sachivalaya Marg, Bhubaneswar-751005 (India); Schowalter, Marco; Mueller, Knut; Rosenauer, A. [Institute of Solid State Physics, University of Bremen, D-28359 Bremen (Germany)

2012-05-15T23:59:59.000Z

384

Chemical states and electronic structure of a HfO(-2) / Ge(001) interface  

SciTech Connect

We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.

Seo, Kang-ill; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.; Sun, Shiyu; Lee, Dong-Ick; Pianetta, Piero; /SLAC, SSRL; Saraswat, Krishna C.; /Stanford U., Elect.

2005-05-04T23:59:59.000Z

385

GE to DOE General Counsel; Re:Request for Comment on Large Capacity...  

Office of Environmental Management (EM)

Clothes Washers GE urges the department engage in rulmaking to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer...

386

E-Print Network 3.0 - amorphous ge bipolar Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

at Stony Brook, Department of Electrical Engineering and Computer Engineering, Optoelectronics Research Group Collection: Engineering 10 A New SiGe Base Lateral PNM Schottky...

387

Positron-annihilation measurements of vacancy formation in Ni and Ni(Ge)  

SciTech Connect

Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV.

Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.

1982-03-01T23:59:59.000Z

388

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character  

SciTech Connect

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

2012-07-15T23:59:59.000Z

389

Effect of the growth rate on the morphology and structural properties of hut-shaped Ge  

Science Journals Connector (OSTI)

The effect of Ge deposition rate on the morphology and structural properties of self-assembled Ge/Si(001) islands was studied. Ge/Si(001) layers were grown by solid-source molecular-beam epitaxy at 500?°C. We adjusted the Ge coverage, 6 monolayers (ML), and varied the Ge growth rate by a factor of 100, R = 0.02–2 ML s?1, to produce films consisting of hut-shaped Ge islands. The samples were characterized by scanning tunnelling microscopy, Raman spectroscopy, and Rutherford backscattering measurements. The mean lateral size of Ge nanoclusters decreases from 14.1 nm at R = 0.02 ML s?1 to 9.8 nm at R = 2 ML s?1. The normalized width of the size distribution shows non-monotonic behaviour as a function of R and has a minimum value of 19% at R = 2 ML s?1. Ge nanoclusters fabricated at the highest deposition rate demonstrate the best structural quality and the highest Ge content (~0.9).

A I Yakimov; A I Nikiforov; A V Dvurechenskii; V V Ulyanov; V A Volodin; R Groetzschel

2006-01-01T23:59:59.000Z

390

Magnetic X-Ray Scattering Study of GdCo2Ge2 and NdCo2Ge2  

SciTech Connect

The results of magnetic x-ray resonant exchange scattering (XRES) experiments are important to the development of an understanding of magnetic interactions in materials. The advantages of high Q resolution, polarization analysis, and the ability to study many different types of materials make it a vital tool in the field of condensed matter physics. Though the concept of XRES was put forth by Platzman and Tzoar in 1970, the technique did not gain much attention until the work of Gibbs and McWhan et al. in 1988. Since then, the technique of XRES has grown immensely in use and applicability. Researchers continue to improve upon the procedure and detection capabilities in order to study magnetic materials of all kinds. The XRES technique is particularly well suited to studying the rare earth metals because of the energy range involved. The resonant L edges of these elements fall between 5-10 KeV. Resonant and nonresonant x-ray scattering experiments were performed in order to develop an understanding of the magnetic ordering in GdCo{sub 2}Ge{sub 2} and NdCo{sub 2}Ge{sub 2}.

William Good

2002-08-27T23:59:59.000Z

391

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

SciTech Connect

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

392

Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials  

GeTe is a narrow-band gap semiconductor, where Ge vacancies generate free charge carriers, holes, forming a self-dopant degenerate system with p-type conductivity, and serves as a base for high-performance multicomponent thermoelectric materials. There is a significant discrepancy between the electronic and thermal transport data for GeTe-based materials reported in the literature, which obscures the baseline knowledge and prevents a clear understanding of the effect of alloying GeTe with various elements. A comprehensive study including XRD, SEM, EDS, Seebeck coefficient, electrical resistivity, thermal conductivity, and 125Te NMR of several GeTe samples was conducted. Similar Seebeck coefficient and electrical resistivity are observed for all GeTe samples used showing that the concentration of Ge vacancies generating charge carriers is constant along the ingot. Very short 125Te NMR spin-relaxation time agrees well with high carrier concentration obtained from the Hall effect measurements. Our data show that at ~700 K, GeTe has a very large power factor, 42 ?Wcm-1K-2, much larger than that of any high efficiency thermoelectric telluride at these temperatures. Electronic and thermal properties of GeTe are compared to PbTe, another well-known thermoelectric material, where free charge carriers, holes or electrons, are generated by vacancies on Pb or Te sites, respectively. Discrepancy in the data for GeTe reported in literature can be attributed to the variation in the Ge:Te ratio of solidified samples as well as to different conditions of measurements.

None

2013-08-29T23:59:59.000Z

393

Second harmonic generation from Ge doped SiO{sub 2} (Ge{sub x}(SiO{sub 2}){sub 1?x}) thin films grown by sputtering  

SciTech Connect

Second-order nonlinear optical properties of sputter-deposited Ge-doped SiO{sub 2} thin films were investigated. It was shown that the second-order nonlinearity of SiO{sub 2}, which vanishes in the electric-dipole approximation due to the centrosymmetric structure, can be significantly enhanced by Ge doping. The observed maximum value of d{sub 33} was 8.2 pm/V, which is 4 times larger than d{sub 22} of ?-BaB{sub 2}O{sub 4} crystal. Strong correlation was observed between the d{sub eff} values and the electron spin resonance signals arising from GeP{sub b} centers, suggesting that GeP{sub b} centers are the most probable origin of the large second-order nonlinearity.

Kawamura, Ibuki; Imakita, Kenji; Fujii, Minoru; Hayashi, Shinji [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)] [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, Rokkodai, Nada, Kobe 657-8501 (Japan)

2013-11-11T23:59:59.000Z

394

Correlation of defect centers with second-harmonic generation in Ge-doped and Ge–P-doped silica-core single-mode fibers  

Science Journals Connector (OSTI)

The origin of frequency doubling in Ge-doped silica-core single-mode glass fibers has been investigated with electron-spin-resonance spectrometry. Correlations have been observed...

Tsai, T E; Saifi, M A; Friebele, E J; Österberg, U; Griscom, D L

1989-01-01T23:59:59.000Z

395

Propagation de Contraintes et Listes Tabou pour le CSP Mohammad DIB, Alexandre CAMINADA, Hakim MABED  

E-Print Network (OSTI)

Propagation de Contraintes et Listes Tabou pour le CSP Mohammad DIB, Alexandre CAMINADA, Hakim pour le CSP. Nous proposons une méthode déterministe qui permet de gérer dynamiquement des coupes dans percentages. 1 INTRODUCTION Un problème de satisfaction de contraintes (CSP) [1] est défini par un ensemble de

Paris-Sud XI, Université de

396

Universit des Sciences et Technologies de Lille -Lille 1 Pour obtenir le titre de  

E-Print Network (OSTI)

Thèse soutenue publiquement le 17 octobre 2011 devant le jury composé de: Christian GOUT Professeur à l and the share of their research experience. I would like to express my sincere gratitude to Prof. Christian Gout

Paris-Sud XI, Université de

397

The PortevinLe Chatelier (PLC) effect and shear band formation in an AA5754 alloy  

E-Print Network (OSTI)

The Portevin­Le Chatelier (PLC) effect and shear band formation in an AA5754 alloy Herdawandi Halim in order to observe Portevin­Le Chatelier (PLC) band behaviour during tensile deformation of AA5754 sheet and subsequently to measure the level of incre- mental plastic strain carried within the bands. In addition, PLC

Niewczas, Marek

398

LeBonheur Children's Hospital/Aesthetic Surgery Plastic Surgery Rotation  

E-Print Network (OSTI)

LeBonheur Children's Hospital/Aesthetic Surgery Plastic Surgery Rotation PGY-7 (2nd year Resident) By the end of the Plastic Surgery Rotation at LeBonheur Children's Hospital and Aesthetic Surgery, the PGY-7 with the following conditions needing plastic surgery including but not limited to: · Mammary ptosis. mammary

Cui, Yan

399

Thse prsente pour obtenir le grade de DOCTEUR DE L'ECOLE POLYTECHNIQUE  

E-Print Network (OSTI)

'Allocation Initiale de Permis d'Emission Négociables de Gaz à Effet de Serre à des Entreprises : un Eclairage du Choix Public par la Philosophie Morale et l'Analyse Economique Le 05 Octobre 2004 Devant le jury composé de

Paris-Sud XI, Université de

400

Chimpanzs, outils et termites dans le bassin du Congo : nouvelles donnes  

E-Print Network (OSTI)

Chimpanz�s, outils et termites dans le bassin du Congo : nouvelles donn�es Crickette Sanz Max into Chimpanzees, Tools, and Termites from the Congo Basin. American Naturalist, 164, 567-581. #12;Chimpanz�s, outils et termites dans le bassin du Congo : nouvelles donn�es R�sum� Les comportements d'utilisation d

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Les associations dans le systme sanitaire et social en France : des territoires de l'invisible.  

E-Print Network (OSTI)

Les associations dans le système sanitaire et social en France : des territoires de l'invisible nébuleuse d'associations moins structurées et peu repérables qui forment des « territoires de l'invisible structured and not much discernible, which forms "spaces of the invisible". LA SANTE, LE SOCIAL ET LES

Paris-Sud XI, Université de

402

Pour obtenir le grade de DOCTEUR DE L'UNIVERSIT DE GRENOBLE  

E-Print Network (OSTI)

conception de coeurs de réacteurs à eau légère et à haut facteur de conversion à combustibles mixtes thorium / uranium / plutonium Thèse soutenue publiquement le 12 septembre 2012, devant le jury composé de : Monsieur

Paris-Sud XI, Université de

403

Intro Perception Frequence Prog. Parcours Bibliographie Outils Informatiques pour le Multimedia  

E-Print Network (OSTI)

Intro Perception Fr´equence Prog. Parcours Bibliographie Outils Informatiques pour le Multim´edia pour le Multim´edia 1 Introduction 2 Perception humaine 3 Notion de fr´equence 4 Programmation d'applications multim´edia 5 Courbes de remplissage de l'espace Tronc commun M1 Informatique - OIM ( 2 / 54 ) #12;Intro

Paulin, Mathias

404

Si le vide absolu existe droite du piston A et qu'on l'abandonne lui-mme, ce piston prend une vitesse qui crot avec le temps et  

E-Print Network (OSTI)

83 Si le vide absolu existe à droite du piston A et qu'on l'abandonne à lui-même, ce piston prend, on imprime au piston A une vitesse progressivement croissante et dirigée de manière à dilater le gaz. Quel que soit le mouvement imprimé à ce piston, pourvu que sa vitesse varie d'une manière continue, le vide

Boyer, Edmond

405

Microsoft Word - Report Cover A08LV023.doc  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Report on the Audit of National Security Report on the Audit of National Security Technologies, LLC Costs Claimed under Department of Energy Contract No. DE-AC52-06NA25946 for Fiscal Year 2007 OAS-FC-09-01 May 2009 Department of Energy Washington, DC 20585 May 18,2009 MEMORANDUM FOR THE MANAGER, NEVADA SITE OFFICE 4p.5h- FROM: George W. Collard ~ssistant Inspector General for Performance Audits Office of Inspector General SUBJECT: INFORMATION: Audit Report on "Audit of National Security Technologies, LLC Costs Claimed Under Contract No. DE-AC52-06NA25946 for Fiscal Year 2007" BACKGROUND National Security Technologies, LLC (NSTec), the management and operating contractor of the Nevada Test Site (Test Site), assumed its management responsibilities on July 1,2006, under

406

Fall 2008 Electives COURSE # CR LV COURSE TITLE SCHEDULE INSTRUCTOR  

E-Print Network (OSTI)

74601 3 G RAWLS' POLITICAL PHIL TH 4 30-6 15 RASMUSSEN PL76101 3 G HEGEL/PHENOMENOL/SPIRIT M 6 30-8 15

Huang, Jianyu

407

http://oilab.seas.wustl.edu --1 2007, LV WANG  

E-Print Network (OSTI)

WANG Motivation for Optical ImagingMotivation for Optical Imaging · Safety -- Non-ionizing radiation DOT, UOT, PAT OM, SNOM OCT Simulation software MCML available from http://oilab.seas.wustl.edu Soft

Wang, Lihong

408

7KLV LV DQ DXWKRUGHSRVLWHG YHUVLRQ SXEOLVKHG LQ KWWSRDWDRXQLYWRXORXVHIU (SULQWV ,'  

E-Print Network (OSTI)

metabolites, 4-hydroxycyclophophosphamide, aldophospha- mide, acrolein and phosphoramide mustard (Joqueviel et

Mailhes, Corinne

409

Microsoft Word - Poster Abstract_2010_GE Global Reserach.doc  

NLE Websites -- All DOE Office Websites (Extended Search)

current collector geometry on ohmic resistance current collector geometry on ohmic resistance H. Cao, S. Gaunt, T. Striker and M.J. Alinger* GE Global Research, One Research Circle, Niskayuna, NY 12309 In order to directly measure the cathode current collector ohmic resistance contribution to the total cell resistance, contact resistance measurements are typically made. In addition to starting cell resistance contributions, these tests provide data regarding resistance changes over time for interpretation of performance degradation. However, the geometries of the current collection used during this testing are often not directly representative of operational fuel cells. Thus, an experimental study was initiated to investigate the effect of various interconnect geometries and their influence on Area

410

Direct Detection of Sub-GeV Dark Matter  

SciTech Connect

Direct detection strategies are proposed for dark matter particles with MeV to GeV mass. In this largely unexplored mass range, dark matter scattering with electrons can cause single-electron ionization signals, which are detectable with current technology. Ultraviolet photons, individual ions, and heat are interesting alternative signals. Focusing on ionization, we calculate the expected dark matter scattering rates and estimate the sensitivity of possible experiments. Backgrounds that may be relevant are discussed. Theoretically interesting models can be probed with existing technologies, and may even be within reach using ongoing direct detection experiments. Significant improvements in sensitivity should be possible with dedicated experiments, opening up a window to new regions in dark matter parameter space.

Essig, Rouven; Mardon, Jeremy; Volansky, Tomer

2012-03-20T23:59:59.000Z

411

Axial Ge/Si nanowire heterostructure tunnel FETs  

SciTech Connect

The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

412

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb  

E-Print Network (OSTI)

Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb contender for extremely low noise, cryogenically cooled amplifiers. This paper begins with a procedureGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low

Weinreb, Sander

413

Optical gain from the direct gap transition of Ge-on-Si at room temperature  

E-Print Network (OSTI)

We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

Liu, Jifeng

414

Infrared absorption of n-type tensile-strained Ge-on-Si  

E-Print Network (OSTI)

We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

Wang, Xiaoxin

415

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes  

E-Print Network (OSTI)

Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes with over 840GHz gain-absorption-charge- multiplication Ge/Si avalanche photodiode with an enhanced gain- bandwidth-product of 845GHz at a wavelength photodiodes (APDs) References and links 1. R. B. Emmons, "Avalanche photodiode frequency response," J. Appl

Bowers, John

416

University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS  

E-Print Network (OSTI)

for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature and thermally in parallel, similar to conventional thermoelectric devices, and thus achieve large cooling of the barriers to further increase clock speeds and decrease feature sizes. Thermoelectric (TE) refrigeration

417

Experimental limits on massive neutrinos from e(+)e(-) annihilations at 29 GeV  

E-Print Network (OSTI)

A search was made in 29-GeV e(+)e(-) annihilations for massive neutrinos decaying to e(±)X(?)(?) where X is a muon or meson. A 300-pb(-1) data sample yielded just one candidate event with a mass m(e)X>1.8 GeV. Significant limits are found for new...

Baringer, Philip S.; Akerlof, C.; Chapman, J.; Errede, D.; Ken, M. T.; Meyer, D. I.; Neal, H.; Nitz,D.; Thun, R.; Tschirhart, R.; Derrick, M.

1988-02-01T23:59:59.000Z

418

Electrical and thermal properties of neutron-transmutation-doped Ge at 20 mK  

Science Journals Connector (OSTI)

We report on hot-electron effects in neutron-transmutation-doped Ge (NTD Ge) near 20 mK. Both static and dynamic electrical properties were measured and compared with a model including both variable-range-hopping conduction and hot-electron effects.

Ning Wang; F. C. Wellstood; B. Sadoulet; E. E. Haller; J. Beeman

1990-02-15T23:59:59.000Z

419

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication Applications  

E-Print Network (OSTI)

(INVITED PAPER) SiGe/Si-Based Optoelectronic Devices for High-Speed Communication ApplicationsGe/Si-based optoelectronic devices are described. These include photodiodes, photoreceivers and modulators. In There is immense interest in the realization of Si-based optoelectronic devices, optoelectronic integrated circuits

Rieh, Jae-Sung

420

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology  

E-Print Network (OSTI)

Advanced Design of Broadband Distributed Amplifier using a SiGe BiCMOS Technology Gye-An Lee distributed amplifier for optical communication applications using SiGe BiCMOS technology. The design of some techniques are needed at such high frequencies. Main obstacles in the design of a silicon- based distributed

De Flaviis, Franco

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

The BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator  

E-Print Network (OSTI)

used at the world's first x-ray free electron laser (FEL) at the LCLS at SLAC, and the lower energyThe BErkeley Lab Laser Accelerator (BELLA): A 10 GeV Laser Plasma Accelerator W.P. Leemansa,b,c , R, USA Abstract. An overview is presented of the design of a 10 GeV laser plasma accelerator (LPA

Geddes, Cameron Guy Robinson

422

Resonant normal-incidence separate-absorption-charge-multiplication Ge/Si avalanche  

E-Print Network (OSTI)

-speed InP /InGaAsP /InGaAs avalanche photodiodes grown by chemical beam epitaxy," IEEE J. Quantum ElectronResonant normal-incidence separate-absorption- charge-multiplication Ge/Si avalanche photodiodes the impedance of separate-absorption-charge- multiplication Ge/Si avalanche photodiodes (APD) is characterized

Bowers, John

423

Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem  

SciTech Connect

The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

2014-02-21T23:59:59.000Z

424

Le Gabon et la question de la societé de l'information. Approche spatiale des réseaux et des enjeux géopolitiques des technologies de la communication.  

E-Print Network (OSTI)

??I - LE CONTEXTE PREALABLE A L'ETUDE Au niveau international et au niveau des pays dont le Gabon, les années 1990 ont vu émerger une… (more)

Makanga Bala, Martial Pépin

2010-01-01T23:59:59.000Z

425

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge  

SciTech Connect

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

2012-12-15T23:59:59.000Z

426

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway | OpenEI  

Open Energy Info (EERE)

GE, Clean Energy Fuels Partner to Expand Natural Gas Highway GE, Clean Energy Fuels Partner to Expand Natural Gas Highway Home > Groups > Clean and Renewable Energy Jessi3bl's picture Submitted by Jessi3bl(15) Member 16 December, 2012 - 19:18 clean energy Clean Energy Fuels energy Environment Fuel GE Innovation Partnerships Technology Innovation & Solutions Transportation Trucking GE, Clean Energy Fuels Partner to Expand 'Natural Gas Highway' GE and Clean Energy Fuels announced a collaboration to expand the infrastructure for natural gas transportation in the United States. The agreement supports Clean Energy's efforts in developing America's Natural Gas Highway, a fueling network that will enable trucks to operate on liquefied natural gas coast to coast and border to border. Clean Energy Fuels will initially purchase two ecomagination-qualified

427

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

902; W(A)-2012-019; CH-1662 902; W(A)-2012-019; CH-1662 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled, "Seeping Studies to Evaluate the Benefits of an Advanced Dry Feed System on the Use of Low-Rank Coal". Under this agreement, GE will demonstrate the advantage of using GE's new, advanced dry feed system (Posimetric Feed System-PFS) for converting low rank coal to electrical power in an IGCC plant configured for 90% Carbon Capture Utilization and Storage (CCUS). The PFS is centered on GE's proprietary Posimetric Feeder, a mechanical device that behaves like a particulate solids pump and is capable of pressurizing dry, ground coal to over 100 psi

428

Titan Propels GE Wind Turbine Research into New Territory | ornl.gov  

NLE Websites -- All DOE Office Websites (Extended Search)

Features Features 2014 2013 2012 2011 2010 News Home | ORNL | News | Features | 2013 SHARE Titan Propels GE Wind Turbine Research into New Territory Simulations of freezing water can help engineers design better blades GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) GE simulated hundreds of water droplets, each including one million molecules. Simulations accelerated at least 200 times over pre-GPU estimates permitting GE to study the nucleation of individual ice molecules.Vizualization by M. Matheson (ORNL) (hi-res image) The amount of global electricity supplied by wind, the world's fastest

429

VEA-0016 - In the Matter of GE Appliances | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6 - In the Matter of GE Appliances 6 - In the Matter of GE Appliances VEA-0016 - In the Matter of GE Appliances Sub-Zero Freezer Co. (Sub-Zero), GE Appliances (GE), and Whirlpool Corporation (Whirlpool) filed appeals of our November 3, 2000 decision, granting Viking Range Corporation (Viking) a six-month exception from the 2001 energy appliance efficiency standards for built-in refrigerators. Viking Range Corp., 28 DOE ¶ 81,002 (2000). As discussed below, we have granted the appeals in part. As a result, the six-month exception will be limited to 475 refrigerators per month and will be subject to a monthly reporting requirement. vea0015-16-17.pdf More Documents & Publications VEH-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0015 - In the Matter of Sub-Zero Freezer Co. VEA-0017 - In the Matter of Whirlpool Corporation

430

BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

DEC. -15' 97(MON) 00:19 IPL DO DEC. -15' 97(MON) 00:19 IPL DO TEL:I 630 5 2779 P. 002 BTATEMENT OF CONBZDRUATIOHN REQUEST BY GENERAL ELECTRIC COMPANY(GE) FOR AN ADVANCED WAIVER OF DOMESTIC AND FOREIGN INVENTION RIGHTS UNDER COOPERATIVE AGREEMENT NO. DE-FC36-97GO10236, W(A)-97-024, CH-0929 The Petitioner, General Electric Company (GE), was awarded this cooperative agreement in response to a proposal for an affordable compact fluorescent lamp (CFL). The initial phase of this work is being performed under DOE Contract No. DE-FC36-97G010236. GE has requested a waiver of domestic and foreign patent rights for all subject inventions under this agreement. As brought out in GE's response to questions 2& 3, the total estimated cost of the project is $1,117,342 with GE paying 25% and DOE providing the balance.

431

Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC  

Science Journals Connector (OSTI)

The magnetism of the Mn+1AXn phase, Cr2GeC, and its Mn-doped system, (Cr1?xMnx)2GeC (x?0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, TC, and the spontaneous moment, ps, increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of peff/ps, where peff is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped Cr2GeC can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

Z. Liu; T. Waki; Y. Tabata; H. Nakamura

2014-02-28T23:59:59.000Z

432

Ohmic contact on n-type Ge using Yb-germanide  

SciTech Connect

Poor ohmic contact by Fermi-level pinning to valence band (E{sub V}) edge is one of the major challenges for germanium (Ge) n-type metal-oxide-semiconductor field-effect transistor (nMOSFET). Using low work-function rare-earth ytterbium (Yb), good ohmic contact on n-type Ge with alleviated Fermi-level pinning was demonstrated. Such ohmic behavior depends strongly on the germanide formation condition, where much degraded ohmic contact at 600 Degree-Sign C rapid thermal annealing is due to the lower Yb/Ge composition found by energy-dispersive x-ray spectroscopy. The ohmic behavior of Yb-germanide/n-type-Ge has high potential for future high-performance Ge nMOSFET application.

Zheng Zhiwei; Liu Ming [Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China); Ku, Teng-Chieh; Chin, Albert [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2012-11-26T23:59:59.000Z

433

In-situ monitoring of surface hydrogen on the a-SiGe:H films  

SciTech Connect

The bonded hydrogen on the growing surface of hydrogenated amorphous silicon germanium (a-SiGe:H) alloy films has been investigated by use of infrared reflection absorption spectroscopy (IR-RAS). When the alloy films are Si-rich, the surface hydrogen bonded to Si atoms is found to behave in a similar way to those on the hydrogenated amorphous silicon (a-Si:H) films. This means that the thermal desorption stability of surface Si hydride species is not significantly affected by the coexistence of a small amount (typically 20 at.%) of Ge. On the contrary, the desorption behavior of surface hydrogen depends on the alloy composition when the a-SiGe:H films are Ge-rich. A surface reaction scheme is provided in an attempt to explain this series of behavior in surface hydrogen on the a-SiGe:H films.

Toyoshima, Y.; Ganguly, G.; Ikeda, T.; Saitoh, K.; Kondo, M.; Matsuda, A.

1997-07-01T23:59:59.000Z

434

Infrared electroluminescence from GeSn heterojunction diodes grown by molecular beam epitaxy  

SciTech Connect

Infrared electroluminescence was observed from GeSn/Ge p-n heterojunction diodes with 8% Sn, grown by molecular beam epitaxy. The GeSn layers were boron doped, compressively strained, and pseudomorphic on Ge substrates. Spectral measurements indicated an emission peak at 0.57 eV, about 50 meV wide, increasing in intensity with applied pulsed current, and with reducing device temperatures. The total integrated emitted power from a single edge facet was 54 {mu}W at an applied peak current of 100 mA at 100 K. These results suggest that GeSn-based materials maybe useful for practical light emitting diodes operating in the infrared wavelength range near 2 {mu}m.

Gupta, Jay Prakash; Bhargava, Nupur; Kim, Sangcheol; Kolodzey, James [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States)] [Department of Electrical and Computer Engineering, University of Delaware, Newark, Delaware 19716 (United States); Adam, Thomas [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)] [Nanofab, University of Albany, SUNY, Albany, New York 12203 (United States)

2013-06-24T23:59:59.000Z

435

Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures  

SciTech Connect

Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

2012-12-10T23:59:59.000Z

436

An ultra-thin buffer layer for Ge epitaxial layers on Si  

SciTech Connect

Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

2013-03-25T23:59:59.000Z

437

Nanoporosity induced by ion implantation in deposited amorphous Ge thin films  

SciTech Connect

The formation of a nano-porous structure in amorphous Ge thin film (sputter-deposited on SiO{sub 2}) during ion irradiation at room temperature with 300 keV Ge{sup +} has been observed. The porous film showed a sponge-like structure substantially different from the columnar structure reported for ion implanted bulk Ge. The voids size and structure resulted to be strongly affected by the material preparation, while the volume expansion turned out to be determined only by the nuclear deposition energy. In SiGe alloys, the swelling occurs only if the Ge concentration is above 90%. These findings rely on peculiar characteristics related to the mechanism of voids nucleation and growth, but they are crucial for future applications of active nanostructured layers such as low cost chemical and biochemical sensing devices or electrodes in batteries.

Romano, L.; Impellizzeri, G.; Ruffino, F.; Miritello, M.; Grimaldi, M. G. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Bosco, L. [Scuola Superiore di Catania, Via Valdisavoia 9, I-95123 Catania (Italy)

2012-06-01T23:59:59.000Z

438

City of Le Sueur, Minnesota (Utility Company) | Open Energy Information  

Open Energy Info (EERE)

Sueur, Minnesota (Utility Company) Sueur, Minnesota (Utility Company) Jump to: navigation, search Name Le Sueur City of Place Minnesota Utility Id 10814 Utility Location Yes Ownership M NERC Location MRO Activity Buying Transmission Yes Activity Distribution Yes Activity Retail Marketing Yes References EIA Form EIA-861 Final Data File for 2010 - File1_a[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Utility Rate Schedules Grid-background.png General Service Commercial Large General Service Commercial Large Industrial Services Rates Industrial Large Industrial Time of Use rate Industrial Rental Light Charges-100w Sodium Lighting Rental Light Charges-150w Sodium Lighting Rental Light Charges-175w Mercury Vapor Lighting

439

Les troubles de la personnalité dans le DSM-5  

Science Journals Connector (OSTI)

Résumé La présentation retrace les principales étapes de la révision du chapitre des troubles de la personnalité dans le DSM-5. Après un rappel des travaux préparatoires, l’auteur résume les travaux du groupe de travail présidé par Andrew Skodol qui a abouti à des recommandations initiales présentées en février 2010. Celles-ci, originales pour la plupart, ont fait l’objet de vives oppositions. Le nouveau modèle proposé, hybride, catégoriel et dimensionnel, n’a pas été accepté par l’Association américaine de psychiatrie, du moins dans la section II, cœur de la classification. L’Association a opté en revanche pour la conservation intégrale des catégories et des critères du DSM-IV. Le modèle alternatif figure cependant dans la section III, dans l’attente d’études complémentaires. Celles-ci sont indispensables pour pouvoir confirmer la validité des dimensions et des facettes retenues, la stabilité de leur structure factorielle et leur intérêt clinique. La suppression du système multiaxial est une autre décision majeure. Les troubles de la personnalité sont désormais des troubles mentaux « Comme les autres », éventualité qui avait fait l’objet de vives critiques par le passé. Abstract This presentation summarizes the revision process in preparing DSM-5 for personality disorders. The preliminary steps were The Research Agenda for DSM-5 published by D Kupfer et al. in 2002 and the APA/NIH Conference on Dimensional Models of Personality Disorders (Arlington, 12.01.2004) published in 2006 by T Widiger et al. DSM-IV categories showed excessive comorbidities and within- diagnosis heterogeneity, temporal instability and poor convergent and discriminant validity. The workgroup on personality and personality disorders chaired by Andrew Skodol has been working since 2007. The initial recommendations were published online on February 10, 2010. A major reconceptualization of personality disorders has been proposed by the workgroup with five severity levels of personality functioning based on degrees of impairment in core self and interpersonal capacities. A reduction in the number of categories (5) was expected to reduce the comorbidities and the replacement of some behavioral criteria by traits in 6 broad domains was expected to result in a better coverage and temporal stability. This new model did not receive a real approval from the American Psychiatric Association. The final decisions consist in the removal of the multiaxial perspective and the maintenance of DSM-IV personality disorders categories and criteria in DSM-5 Section II. The alternative hybrid model was placed in Section III with five domains and 25 trait facets. More validation studies are needed for the Personality Inventory for DSM-5 (PID-5) from R. Krueger (stability of factorial structure in psychiatric samples and concurrent validity with the new version of NEO PI-R (NEO 3).

Julien Daniel Guelfi

2014-01-01T23:59:59.000Z

440

Image Segmentation using a Generalized Fast Marching Nicolas Forcadel (ENPC-CERMICS, Paris), Carole Le Guyader (INSA  

E-Print Network (OSTI)

), Carole Le Guyader (INSA Rennes), Christian Gout (INRIA, France) Multivariate Approximation: Theory and Applications April 26 - May 01, 2007 N. Forcadel C. Le Guyader, C. Gout Image Segmentation #12;Plan 1 Fast. Le Guyader, C. Gout Image Segmentation #12;Plan 1 Fast Marching Method 2 Generalized Fast Marching

Forcadel, Nicolas

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441

NUMERUS CLAUSUS DU CONCOURS DE MAIEUTIQUE Par arrt du 5 novembre 2010, le nombre d'tudiants de premire anne  

E-Print Network (OSTI)

NUMERUS CLAUSUS DU CONCOURS DE MAIEUTIQUE 2011 Par arrêté du 5 novembre 2010, le nombre d. #12;NUMERUS CLAUSUS DU CONCOURS DE MEDECINE 2011 Par arrêté du 5 novembre 2010, le nombre d;NUMERUS CLAUSUS DU CONCOURS D'ODONTOLOGIE 2011 Par arrêté du 5 novembre 2010, le nombre d'étudiants de

Jeanjean, Louis

442

Dangling Bond Defects in a-Si,Ge Alloys: A Theoretical Study Using the Tight-Binding Method  

Science Journals Connector (OSTI)

This paper presents a theoretical study of Si and Ge atom dangling bond defects in a-Si,Ge alloys. We use a tight-binding Hamiltonian, and a structural model based on a cluster Bethe Lattice. The central clust...

S. Y. Lin; G. Lucovsky

1985-01-01T23:59:59.000Z

443

A Systematic Investigation of the Structure and Superconducting Properties of Nb3Ge Prepared in a UHV System  

Science Journals Connector (OSTI)

Nb3Ge films were prepared by coevaporation of Nb and Ge from two sources under well defined and controlled conditions. We have studied the formation of the A15 phase by varying the processing parameters-compositi...

H. U. Habermeier; P. Chaudhari

1981-01-01T23:59:59.000Z

444

Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy  

SciTech Connect

GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

2013-03-04T23:59:59.000Z

445

Potentialities of disilane for the low temperature epitaxy of intrinsic and boron-doped SiGe  

Science Journals Connector (OSTI)

Abstract The disilane (Si2H6) + germane (GeH4) chemistry has been evaluated for the reduced pressure (2660 Pa, i.e. 20 Torr), low temperature growth of intrinsic and heavily boron-doped SiGe. A SiGe growth rate “plateau” has been evidenced between 650 °C and 750 °C. Meanwhile, the Ge concentration x was rather steady in the 500 °C–700 °C range. A linear increase of the SiGe growth rate with the GeH4 flow occurred at 500 °C, 550 °C and 675 °C. The increase of x with the GeH4 mass-flow otherwise changed from linear to sub-linear as the growth temperature was reduced from 675 °C down to 500 °C–550 °C. Be it with Si2H6 or SiH4, the SiGe growth rate fell by a factor of ~ 7–8 when switching from 550 °C to 500 °C. For the same x, growth rate was nevertheless 3–9 times higher with Si2H6 than with SiH4. We have also studied the impact of B2H6 on the 500 °C growth kinetics of SiGe with Si2H6. Large substitutional boron concentrations were obtained in single-crystalline SiGe:B layers: [B]subst. ~ 3.7 × 1020 cm?3. Surface B atoms otherwise catalysed H desorption, resulting in growth rates ~ 5 times higher for SiGe:B than for intrinsic SiGe. Finally, a monotonic decrease of the SiGe(:B) growth rate together with a significant increase of the Ge concentration were evidenced at 500 °C and 675 °C when adding \\{HCl\\} to the gaseous mixture. At 500 °C, SiGe:B growth rates still stayed 3 times higher than the intrinsic SiGe ones. Adding \\{HCl\\} had otherwise no clear impact on [B]subst.

J.M. Hartmann; V. Benevent; M. Veillerot; A. Halimaoui

2014-01-01T23:59:59.000Z

446

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV  

E-Print Network (OSTI)

Spécification technique des stations de pompage pour les faisceaux secondaires des Zones Expérimentales du synchroton de 300 GeV

Coet, P

1975-01-01T23:59:59.000Z

447

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide Contact Formation with Ar  

E-Print Network (OSTI)

Enhanced Device Performance of Germanium Nanowire Junctionless (GeNW-JL) MOSFETs by Germanide nanowire junctionless (GeNW-JL) metal-oxide-semiconductor-field-effect-transistors (MOSFETs) exhibited in the suboxide on the GeNW, whose germanium- enrichment surface was obtained to form a germanide contact at low

Jo, Moon-Ho

448

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced  

E-Print Network (OSTI)

CuGeO3 nanowires covered with graphene as anode materials of lithium ion batteries with enhanced one-step route was developed to synthesize crystalline CuGeO3 nanowire/graphene composites (CGCs). Crystalline CuGeO3 nanowires were tightly covered and anchored by graphene sheets, forming a layered structure

Lin, Zhiqun

449

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires  

Science Journals Connector (OSTI)

We experimentally studied the thermoelectric power factor of hole gas in individual Ge–Si core–shell nanowires with Ge core diameters ranging from 11 to 25 nm. The Ge cores are dopant-free, but the Fermi level in the cores is pinned by surface and defect ...

Jaeyun Moon; Ji-Hun Kim; Zack C.Y. Chen; Jie Xiang; Renkun Chen

2013-02-08T23:59:59.000Z

450

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001)  

E-Print Network (OSTI)

Comparative study of dimer-vacancies and dimer-vacancy lines on Si(001) and Ge(001) Cristian V that dimer- vacancy (DV) defects self-organize into vacancy lines (VLs) on Si(0 0 1), but not on Ge(0 0 1 the vacancies on Si(0 0 1) and Ge(0 0 1). We identify three energetic parameters which characterize the DVs

Ciobanu, Cristian

451

Sharp Fe/MgO/Ge(001) epitaxial heterostructures for tunneling junctions  

SciTech Connect

We report on the growth of epitaxial Fe/MgO/Ge(001) heterostructures by molecular beam epitaxy. The lowest oxidation and highest sharpness of the MgO/Ge interface, corresponding to a transition layer on the order of one Ge unit cell, is obtained for room temperature growth of the MgO layer followed by annealing in a vacuum at 500 C. In these conditions, the MgO layer grows epitaxially on Ge(001) with the [110] direction parallel to the [100] direction of Ge, at variance with the cube-on-cube growth on Si(001) and GaAs(001). However, in some cases, the cube-on-cube growth mode of MgO on Ge competes with the mode involving a 45{sup o} rotation, as revealed by transmission electron microscopy and photoelectron diffraction data on MgO films grown at 300 C without postannealing, and on p-doped Ge substrates. For the Fe overlayer, in all the cases reported, room temperature growth followed by annealing up to 200 C gives rise to a sharp interface and the well-known 45{sup o} rotation of the Fe lattice with respect to the MgO lattice.

Petti, D. [Politecnico di Milano; Cantoni, M. [Politecnico di Milano; Rinaldi, C. [Politecnico di Milano; Brivio, S. [Politecnico di Milano; Bertacco, R. [Politecnico di Milano; Gazquez Alabart, Jaume [ORNL; Varela del Arco, Maria [ORNL

2011-01-01T23:59:59.000Z

452

Thse prsente pour obtenir le grade de DOCTEUR DE L'COLE POLYTECHNIQUE  

E-Print Network (OSTI)

c-C4F8 et CF4, jouent le rôle clé en fournissant les espèces nécessaires à la gravure des motifs mélanges gazeux de type Ar/O2/c-C4F8 et Ar/O2/CF4, à des pressions proches de 50 mTorr (6.6 Pa) et excité. Dans les mélanges Ar/O2/CF4, le plasma n'est électronégatif que pour de faibles débits de O2. Il est

Paris-Sud XI, Université de

453

Structure determination of Ag-Ge-S glasses using neutron diffraction  

Science Journals Connector (OSTI)

The structure of the superionic glass system (Ag2S)x(GeS2)1-x, for three compositions x=0.3, 0.4, 0.5, has been studied using neutron diffraction, and isotopic-substitution neutron-diffraction experiments have been performed on three silver isotope-substituted (107Ag,natAg,109Ag) samples of the composition (Ag2S)0.5(GeS2)0.5. The average short-range orderings of Ge-S, Ag-S, and Ge-Ag correlations were identified in the radial distribution functions for the isotopically substituted system of (Ag2S)0.5(GeS2)0.5. From the first and second differences in the three sets of isotopic-substitution neutron-diffraction data, the other three partial correlations (Ag-Ag, Ge-Ge, and S-S), were also identified. By examining unusually broad peaks in the Ag-Ag correlation function, it was concluded that the Ag-Ag distribution was rather homogeneous. We were also able to obtain further information by combining the first and second difference analyses, resulting in a structural model of a slightly elongated GeS4 tetrahedron with the local environment of Ag+ ions being threefold coordination by nonbridging sulphur ions. The medium-range order of the host framework was found to be a chainlike structure of linked corner-sharing GeS4 tetrahedra. Substantial changes in the first and second peaks in the distinct scattering functions i(Q) were found with composition and also with isotopic substitution. It was possible to explain the trends in the changes of the heights of these peaks in the structure factor by applying the void model for the first sharp diffraction peak. © 1996 The American Physical Society.

J. H. Lee; A. P. Owens; A. Pradel; A. C. Hannon; M. Ribes; S. R. Elliott

1996-08-01T23:59:59.000Z

454

Wide-band neutrino beams at 1000 GeV  

SciTech Connect

In a previous publication, S. Mori discussed various broad-band neutrino and antineutrino beams using 1000 GeV protons on target. A new beam (SST) has been designed which provides the same neutrino flux as the quadrupole triplet (QT) while suppressing the wrong sign flux by a factor of 18. It also provides more than twice as much high energy antineutrino flux than the sign-selected bare target (SSBT) and in addition, has better neutrino suppression. While it is possible to increase the flux obtained from the single horn system over that previously described, the conclusion which states any horn focussing system seems to be of marginal use for Tevatron neutrino physics, is unchanged. Neutrino and antineutrino event rates and wrong sign backgrounds were computed using NUADA for a 100 metric ton detector of radius 1.5 meters. Due to radiation considerations and the existing transformer location, the horn beam is placed in its usual position inside the Target Tube. All other beams are placed in Fronthall. Thus, for the wide-band Fronthall trains a decay distance of 520 meters is used, versus 400 meters for the horn train. (WHK)

Malensek, A.; Stutte, L.

1983-04-11T23:59:59.000Z

455

Exotic decays of the 125 GeV Higgs boson  

Science Journals Connector (OSTI)

We perform an extensive survey of nonstandard Higgs decays that are consistent with the 125 GeV Higgs-like resonance. Our aim is to motivate a large set of new experimental analyses on the existing and forthcoming data from the Large Hadron Collider (LHC). The explicit search for exotic Higgs decays presents a largely untapped discovery opportunity for the LHC collaborations, as such decays may be easily missed by other searches. We emphasize that the Higgs is uniquely sensitive to the potential existence of new weakly coupled particles and provide a unified discussion of a large class of both simplified and complete models that give rise to characteristic patterns of exotic Higgs decays. We assess the status of exotic Higgs decays after LHC run I. In many cases we are able to set new nontrivial constraints by reinterpreting existing experimental analyses. We point out that improvements are possible with dedicated analyses and perform some preliminary collider studies. We prioritize the analyses according to their theoretical motivation and their experimental feasibility. This document is accompanied by a Web site that will be continuously updated with further information [http://exotichiggs.physics.sunysb.edu].

David Curtin; Rouven Essig; Stefania Gori; Prerit Jaiswal; Andrey Katz; Tao Liu; Zhen Liu; David McKeen; Jessie Shelton; Matthew Strassler; Ze’ev Surujon; Brock Tweedie; Yi-Ming Zhong

2014-10-13T23:59:59.000Z

456

Potential improvements in SiGe radioisotope thermoelectric generator performance  

SciTech Connect

In accordance with NASA{close_quote}s slogan: {open_quotes}Better, Cheaper, Faster,{close_quotes} this paper will address potential improvements to SiGe RTG technology to make them Better. RTGs are doubtless cheaper than {open_quotes}paper designs{close_quotes} which are better and cheaper until development, performance and safety test costs are considered. RTGs have the advantage of being fully developed and tested in the rigors of space for over twenty years. Further, unless a new system can be accelerated tested, as were the RTGs, they cannot be deployed reliably unless a number of systems have succeeded for test periods exceeding the mission lifetime. Two potential developments are discussed that can improve the basic RTG performance by 10 to 40{sup +}{percent} depending on the mission profile. These improvements could be demonstrated in years. Accelerated testing could also be performed in this period to preserve existing RTG reliability. Data from a qualification tested RTG will be displayed, while not definitive, to support the conclusions. Finally, it is anticipated that other investigators will be encouraged to suggest further modifications to the basic RTG design to improve its performance. {copyright} {ital 1999 American Institute of Physics.}

Mowery, A.L. [4 Myrtle Bank Lane, Hilton Head Island, South Carolina, 29926-2650 (United States)

1999-01-01T23:59:59.000Z

457

APPROACHING CRYOGENIC GE PERFORMANCE WITH PELTIER COOLED CDTE  

SciTech Connect

A new class of hand-held, portable spectrometers based on large area (lcm2) CdTe detectors of thickness up to 3mm has been demonstrated to produce energy resolution of between 0.3 and 0.5% FWHM at 662 keV. The system uses a charge loss correction circuit for improved efficiency, and detector temperature stabilization to ensure consistent operation of the detector during field measurements over a wide range of ambient temperature. The system can operate continuously for up to 8hrs on rechargeable batteries. The signal output from the charge loss corrector is compatible with most analog and digital spectroscopy amplifiers and multi channel analyzers. Using a detector measuring 11.2 by 9.1 by 2.13 mm3, we have recently been able to obtain the first wide-range plutonium gamma-ray isotopic analysis with other than a cryogenically cooled germanium spectrometer. The CdTe spectrometer is capable of measuring small plutonium reference samples in about one hour, covering the range from low to high burnup. The isotopic analysis software used to obtain these results was FRAM, Version 4 from LANL. The new spectrometer is expected to be useful for low-grade assay, as well as for some in-situ plutonium gamma-ray isotopics in lieu of cryogenically cooled Ge.

Khusainov, A. K. (A. Kh.); Iwanczyk, J. S. (Jan S.); Patt, B. E. (Bradley E.); Prirogov, A. M. (Alexandre M.); Vo, Duc T.

2001-01-01T23:59:59.000Z

458

Characterization of SiGe/Si multi-quantum wells for infrared sensing  

SciTech Connect

SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

2013-12-16T23:59:59.000Z

459

Low-temperature recrystallization of Ge nanolayers on ZnSe  

SciTech Connect

The in situ X-ray photoelectron spectroscopy observation of low-temperature recrystallization of an amorphous Ge layer deposited on a ZnSe film at room temperature is reported. It is shown that the experimentally measured shifts of the Ge 3d core level are consistent with the changes observed in the crystal structure of the layer by the high-energy electron diffraction technique in the reflection mode of measurements. The shifts can be attributed to successive nanometer-scaled structural changes in the Ge layer with increasing temperature.

Suprun, S. P., E-mail: suprun@thermo.isp.nsc.ru; Fedosenko, E. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)

2007-05-15T23:59:59.000Z

460

LA REVUE DE L'EPI N 96 DITORIAL Pour sa premire dition, le Salon de l'ducation qui s'est tenu la  

E-Print Network (OSTI)

Technologies de l'Infor- mation et de la Communication dans le système éducatif. Le faible coût, la robustesse beaucoup le choix judicieux pour le développement de serveurs Internet et Intranet, il lui reste à faire

Paris-Sud XI, Université de

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461

Le même et l'autre : Proust et Godard au miroir de l'intermédialité  

E-Print Network (OSTI)

Août 74) : 5- Carbone, Mauro. La visibilité de l’invisible.données brutes de la réalité. Mauro Carbone le remarque avecet manifeste l’antérieur". Mauro Carbone, La visibilité de

Bertucci, Sonja Milka

2012-01-01T23:59:59.000Z

462

pour obtenir le grade de DOCTEUR DE L'UNIVERSITE DE LILLE II  

E-Print Network (OSTI)

biodégradables Polyesters aliphatiques Polyhydroxyalcanoates (PHA) 1.3.2 Le choix du composant cellulaire 1? #12;4 3.3 Experimental off-pump transventricular pulmonary valve replacement using a self- expandable

Paris-Sud XI, Université de

463

E-Print Network 3.0 - alain le mhaut Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Maryline Guilloux... Rennes, le 11 mai 2011 Institut de Physique de Rennes www.ipr.univ-rennes1.fr Btiment 11A... son directeur, Alain Fontaine 12h Remise de la...

464

E-Print Network 3.0 - avec le spectrometre Sample Search Results  

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0001302,version1-29Jul2010 12;1 Introduction - l'energie doit... , dans le cas d'un plasma, les collisions avec ... Source: Ecole Polytechnique, Centre de mathmatiques...

465

E-Print Network 3.0 - atout maitre le Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

a Jussieu lundi 2 mars 2009 a 13h45 Summary: . Les exposes auront lieu dans l'Amphi F1, sur le cam- pus de Jussieu Programme et intervenants 13h45... La Masterisation ...

466

E-Print Network 3.0 - avec le test Sample Search Results  

NLE Websites -- All DOE Office Websites (Extended Search)

test Search Powered by Explorit Topic List Advanced Search Sample search results for: avec le test Page: << < 1 2 3 4 5 > >> 1 A. LAHIMER , P. LOPEZ , M. HAOUARI LAAS-CNRS ;...

467

Revisiting the Image of "Bushmen Tea" Jean-Lo'ic Le Quellec,  

E-Print Network (OSTI)

Revisiting the Image of "Bushmen Tea" Jean-Lo'ic Le Quellec, Research Director, CNRS (French appalling. Rooibos container. The Achterfontein brand was created in 2008. The logo adapted from a bushman

Paris-Sud XI, Université de

468

Temps du pass et temps pass : le prsent refigur dans quelques rcits de science-fiction  

E-Print Network (OSTI)

« Fragments sauvés des ruines de mon esprit »2 , un vaisseau extra-terrestre vient aspirer chronologiquement le passé des individus terrestres et les priver progressivement de leur mémoire : les corps

Boyer, Edmond

469

Designs on Dignity: Perceptions of Technology Among the Christopher A. Le Dantec W. Keith Edwards  

E-Print Network (OSTI)

Designs on Dignity: Perceptions of Technology Among the Homeless Christopher A. Le Dantec W. Keith of Technology Atlanta, GA, USA {ledantec, keith}@cc.gatech.edu ABSTRACT Technology, it is argued, has

Edwards, Keith

470

m /r 4 ?j (?) prsente pour obtenir le grade de docteur de  

E-Print Network (OSTI)

ont été étudiés. Dans le système sans alcalins, c'est la formation de l'ettringite secondaire par

Paris-Sud XI, Université de

471

DOE - Office of Legacy Management -- R K Le Blond Machine Tool Co - OH 38  

NLE Websites -- All DOE Office Websites (Extended Search)

K Le Blond Machine Tool Co - OH K Le Blond Machine Tool Co - OH 38 FUSRAP Considered Sites Site: R. K. LE BLOND MACHINE TOOL CO. (OH.38) Eliminated from further consideration under FUSRAP Designated Name: Not Designated Alternate Name: None Location: Madison & Edwards Roads , Cincinnati , Ohio OH.38-1 Evaluation Year: 1995 OH.38-3 Site Operations: Facility used to conduct two billet drilling tests to demonstrating the capability of a LeBlond Carlstedt Rapid Boring Machine boring holes through the center of solid cast uranium billets - January, August and September, 1961. OH.38-2 Site Disposition: Eliminated - site cleaned up at conclusion of tests. Limited period of tests and quantity of material processed - potential for residual contamination considered remote. OH.38-2

472

Utilisation digestive de rations riches en lignines chez le lapin en croissance  

E-Print Network (OSTI)

Utilisation digestive de rations riches en lignines chez le lapin en croissance: mesures de flux et digestion de la ration sont mal connus chez le lapin. L'effet de hautes teneurs en lignines sur la digestion), caractérisé essentiellement par sa teneur variable en lignines VAN SOEST: 7,4 (lot B) ; 12,8 (lot M) et 16,0 p

Boyer, Edmond

473

Distribution automobile en Europe et concurrence : le point de vue de l'conomiste  

E-Print Network (OSTI)

1 Distribution automobile en Europe et concurrence : le point de vue de l'économiste Philippe BARBET Professeur d'économie à l'université de Paris XIII1 Le secteur de la distribution automobile en'emploi. Les dépenses liées à l'automobile représentent selon l'INSEE entre 10,5 à 11 % du budget des ménages

Paris-Sud XI, Université de

474

Sunday, 8th, 2:00 pm Harrison-LeCaine Hall Foyer  

E-Print Network (OSTI)

2013 to May 2014 #12;Friday, 25th, 7:30 pm Dunning Auditorium E-Gré Competition Winner's National TourSunday, 8th, 2:00 pm Harrison-LeCaine Hall Foyer Queen's Conservatory of Music Open House. Check.queensu.ca/qcm Friday, 13th, 12:30 pm Harrison-LeCaine Hall, Rm. 124 Colloquium Presentation by Dr. Kip Pegley, winner

Ellis, Randy

475

De l'information primaire l'information valeur ajoute dans le contexte du numrique  

E-Print Network (OSTI)

De l'information primaire à l'information à valeur ajoutée dans le contexte du numérique Sahbi sur la « gestion de l'information numérique et la coordination avec l'information à valeur ajoutée ». Le traitement de l'information quelque soit sa nature et ses origines se trouve au confluent de

Paris-Sud XI, Université de

476

TALN 2010, Montral, 1923 juillet 2010 Dveloppement de ressources pour le persan  

E-Print Network (OSTI)

TALN 2010, Montréal, 19­23 juillet 2010 Développement de ressources pour le persan: lexique.walther@linguist.jussieu.fr Résumé. Nous présentons PerLex, un lexique morphologique du persan à large couverture et libre- ment caractéristiques de la morphologie du persan, et la façon dont nous l'avons représentée dans le formalisme lexical

Boyer, Edmond

477

L'IRAN ET LE "CROISSANT CHIITE": MYTHES, RALITS ET PROSPECTIVE  

E-Print Network (OSTI)

141 L'IRAN ET LE "CROISSANT CHIITE": MYTHES, R�ALIT�S ET PROSPECTIVE Le recteur Gérard faire évoluer les rapports de force, plus particulièrement au Moyen-Orient, en faveur de l'Iran et, donc chiite ». Ce dernier, allant de l'Iran au Liban, comprendrait d'abord l'Irak post-Saddam, dont les

Paris-Sud XI, Université de

478

| L'enqute CNRS I LE JOURNAL l'horizon 2020, la part des  

E-Print Network (OSTI)

on le souhai- tera ;c'estlatechniqueCAES(compressed air energy storage). « Pour le stockage à grande leur nombre, pour des raisons géographiques. Suivant la même logique, l'eau peut être remplacée par l'air- primerl'air,quipourraêtredétenduulté- rieurement dans des turbines afin de restituer l'électricité quand

van Tiggelen, Bart

479

PROCD RAPIDE POUR LA PHOTOMTRIE DES BECS A INCANDESCENCE PAR LE GAZ (1) ;  

E-Print Network (OSTI)

469 PROC�D� RAPIDE POUR LA PHOTOM�TRIE DES BECS A INCANDESCENCE PAR LE GAZ (1) ; Par P. LAURIOL. Les essais des becs à incandescence par le gaz destinés à l'éclai- rage public comportent un très pendant une série de mesures. On emploie une lampe à incandescence électrique dont on #12;471 maintint la

Paris-Sud XI, Université de

480

Un nouvel lment : le Radiothorium dont l'manation est identique celle du Thorium 1  

E-Print Network (OSTI)

Un nouvel élément : le Radiothorium dont l'émanation est identique à celle du Thorium 1 Deuxième principalement par un mélange de terres rares, dont le thorium était la plus abondante. M. Dunstan, qui avait ii (pie la radioactivité des parties les plus solubles était identique il celle du thorium. Il fallait

Boyer, Edmond

Note: This page contains sample records for the topic "ge le lv" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Resume de Sequences Temporelles pour le Passage `a l' Echelle d'Applications Dependantes du Temps  

E-Print Network (OSTI)

R´esum´e de S´equences Temporelles pour le Passage `a l' ´Echelle d'Applications D´ependantes du {qpham, boualem}@cse.unsw.edu.au Abstract Nous pr´esentons dans ces travaux le concept du "R´esum´e de S grandes masses de donn´ees. Un R´esum´e de S´equence Temporelle s'obtient en transformant une s´equence d

Boyer, Edmond

482

Alliance stratgique entre PME et Grande Firme Internationale : Quel rle pour le middle manager ?  

E-Print Network (OSTI)

1 Alliance stratégique entre PME et Grande Firme Internationale : Quel rôle pour le middle manager Globales aux Born Global Firms, PAU : France (2010)" #12;2 Alliance stratégique entre Petite et Moyenne coûts et des niveaux d'engagements différents. Ce travail propose de se focaliser sur l'alliance

Boyer, Edmond

483

Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method  

SciTech Connect

The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 ? cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)] [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)] [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

2013-10-21T23:59:59.000Z

484

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration | U.S.  

Office of Science (SC) Website

Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration High Energy Physics (HEP) HEP Home About Research Facilities Science Highlights Benefits of HEP Funding Opportunities Advisory Committees News & Resources Contact Information High Energy Physics U.S. Department of Energy SC-25/Germantown Building 1000 Independence Ave., SW Washington, DC 20585 P: (301) 903-3624 F: (301) 903-2597 E: sc.hep@science.doe.gov More Information » July 2013 Two GeV Electrons Achieved by Laser Plasma Wakefield Acceleration Scientists at University of Texas, Austin, accelerate electrons to 2 GeV in table top apparatus. Print Text Size: A A A Subscribe FeedbackShare Page Click to enlarge photo. Enlarge Photo Image courtesy of Neil Fazel The inside of the University of Texas, Austin, vacuum chamber where

485

STATEMENT OF CONSIDERATIONS REQUEST BY GE ENERGY (USA) LLC, FOR AN ADVANCE WAIVER OF  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

859; W(A)-2012-018 859; W(A)-2012-018 ; CH-1661 GE Energy (USA) LLC (GE), requests an advance waiver of domestic and foreign patent rights for all subject inventions made under the above cooperative agreement for work entitled , "Feasibility Studies to Improve Plant Availability and Reduce Total Installed Cost in IGCC Plants". Under this agreement, GE will evaluate several factors that make the cost of implementing integrated gasification combined cycle (IGCC) power production challenging . Specifically, GE will evaluate the effects on total installed cost and availability through deployment of a multi-faceted approach in three areas: Technology Evaluation ; Constructability; and , Design methodology. The end result is to reduce the time to technologica l maturity and enable plants to reach higher

486

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Secretary Chu to Tour GE Global Research Advanced Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

487

Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tour GE Global Research Advanced Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis WASHINGTON - On Friday, May 25, 2012, U.S. Energy Secretary Steven Chu will visit GE Global Research in Niskayuna, New York, where he will tour the company's advanced manufacturing lab. Secretary Chu will highlight the economic opportunities in the clean energy economy as well as advanced manufacturing's potential to save American companies time and money while supporting efficient innovative product engineering and development. Following his tour, Secretary Chu will speak at Rensselaer Polytechnic Institute's Commencement Colloquy. On Saturday, May 26, Secretary Chu will participate in the university's commencement ceremonies as an

488

STATEMENT OF CONSIDERATIONS REQUEST BY GENERAL ELECTRIC COMPANY (GE) FOR AN  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

(GE) FOR AN (GE) FOR AN ADVANCE WAIVER OF DOMESTIC AND FOREIGN RIGHTS TO INVENTIONS MADE UNDER COOPERATIVE AGREEMENT NUMBER DE-FC04-2002AL68080, DOE WAIVER NO. W(A) 03-003. The Petitioner, GE, has requested a waiver of all domestic and foreign patent rights to inventions that may be conceived or first actually reduced to practice in the course of GE's work under Cooperative Agreement Number DE-FC04-2002AL68080 entitled "Advanced Hybrid Propulsion and Energy Management System for High Efficiency, Off- Highway, 320 Ton Class, Diesel Electric Haul Trucks." The work to be done under the cooperative agreement will be the design, fabrication and demonstration of a hybrid propulsion and energy management system for off-highway vehicles used in mining applications. The hybrid propulsion system would allow for an

489

STATEMENT OF CONSIDERATIONS PETITION FOR ADVANCE WAIVER OF PATENT RIGHTS BY GE  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

181 BETWEEN GE GLOBAL AND 181 BETWEEN GE GLOBAL AND DOE; W(A)-09-016; CH-1485 The Petitioner, GE GLOBAL, has requested a waiver of domestic and certain foreign patent rights for all subject inventions that may be conceived or first actually reduced to practice by GE GLOBAL arising from its participation under the above referenced cooperative agreement entitled "300°c Capable Electronics Platform and Temperature Sensor System for Enhanced Geothermal Systems." The objective of the project is development of geothermal well bore monitoring applications, through the development of SiC based electronics and ceramic packaging capable of sustained operation at temperatures up to 300°C and 10km depth. The total cost of the project is approximately $2 million with the Petitioner

490

High efficiency thin-film crystalline Si/Ge tandem solar cell  

Science Journals Connector (OSTI)

We propose and simulate a photovoltaic solar cell comprised of Si and Ge pn junctions in tandem. With an anti-reflection film at the front surface, we have shown that optimal solar...

Sun, G; Chang, F; Soref, R A

2010-01-01T23:59:59.000Z

491

Microcrystalline SiGe Absorber Layers in Thin-film Silicon Solar Cells  

Science Journals Connector (OSTI)

Abstract We report on physical properties of microcrystalline silicon-germanium (?c-SiGe:H) absorber layers for the use as a bottom structure in silicon based multijunction thin-film solar cells. Due to incorporation of Ge the absorption of the film is enhanced compared to pure ?c-Si:H films. This provides the opportunity to significantly reduce the absorber layer thickness. The experiments were carried out in a 13.56 MHz PECVD reactor using germane, silane and hydrogen as process gases. Single layers were characterized for their optical and electrical properties. Results from single and multijunction solar cells using a ?c- SiGe:H absorbers will be shown. In tandem solar cells a reduction of about 60% of the absorber layer thickness could be reached by using SiGe alloys compared to pristine silicon tandem cells.

K.V. Maydell; K. Grunewald; M. Kellermann; O. Sergeev; P. Klement; N. Reininghaus; T. Kilper

2014-01-01T23:59:59.000Z

492

Theoretical study of the thermoelectric properties of SiGe nanotubes  

E-Print Network (OSTI)

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes tend to have gear-like geometry, and both the (6, 6) and (10, 0) tubes are semiconducting with direct band gaps. The calculated Seebeck coefficients as well as the relaxation time of these SiGe nanotubes are significantly larger than those of bulk thermoelectric materials. Together with smaller lattice thermal conductivity caused by phonon boundary and alloy scattering, these SiGe nanotubes can exhibit very good thermoelectric performance. Moreover, there are strong chirality and temperature dependence of the ZT values, which can be optimized to 4.9 at room temperature and further enhanced to 5.4 at 400 K for the armchair (6, 6) tube.

Wei, J; Tan, X J; Cheng, L; Zhang, J; Fan, D D; Shi, J; Tang, X F

2014-01-01T23:59:59.000Z

493

Absorption, structural, and electrical properties of Ge films prepared by ion-beam-assisted deposition  

Science Journals Connector (OSTI)

Effects of ion energy on the optical, microstructure, and electrical properties of Ge films prepared by ion-beam-assisted deposition were investigated. The absorption edge is found to...

Leng, Jian; Zhao, Li; Ji, Yiqin; Liu, Huasong; Zhuang, Kewen

2014-01-01T23:59:59.000Z

494

5 Top Trends From the Women and Technology Symposium | GE Global...  

NLE Websites -- All DOE Office Websites (Extended Search)

disciplines. So this year, we wanted to take it to the next level. Why not leverage our "Mini-GE" (Chairmen Jeff Immelt's nickname for our India technology center), where all of...

495

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy  

SciTech Connect

The effects of the growth temperature, composition, and elastic strains in separate layers on the segregation of antimony are studied experimentally for stressed SiGe structures grown by molecular beam epitaxy. It is established that the growth conditions and parameters of the structures exert an interrelated influence on the segregation of Sb: the degree of the influence of the composition and elastic stresses in the SiGe layers on Sb segregation depends on the growth temperature. It is shown that usage of a method previously proposed by us for the selective doping of silicon structures with consideration for the obtained dependences of Sb segregation on the growth conditions and parameters of the SiGe layers makes it possible to form SiGe structures selectively doped with antimony.

Drozdov, M. N.; Novikov, A. V.; Yurasov, D. V., E-mail: Inquisitor@ipm.sci.nnov.ru [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

2013-11-15T23:59:59.000Z

496

Natural SnGeS3 from Radvanice near Trutnov (Czech Republic) :  

Science Journals Connector (OSTI)

...diffractometer HZG4/TuR (CuKalpha radiation, stepscanning). To minimize...graphite monochromatized MoKalpha-radiation. Data collection parameters...zaoek Ondurs, P. (1997): Naturally occuring germanium compounds, GeSnS3...

Jiri SEJKORA; Peter BERLEPSCH; Emil MAKOVICKY; Tonci BALI?-ZUNI?

497

A Ge-on-Si laser for electronic-photonic integration  

E-Print Network (OSTI)

We demonstrate room temperature photoluminescence and optical gain from the direct band gap transition of tensile strained n-type Ge-on-Si around 1600 nm, which can be applied to a Si-based laser for optical interconnects ...

Sun, Xiaochen

498

Direct-gap optical gain of Ge on Si at room temperature  

E-Print Network (OSTI)

Lasers on Si are crucial components of monolithic electronic–photonic integration. Recently our theoretical analysis has shown that Ge, a pseudodirect bandgap material compatible with Si complementary metal oxide semiconductor ...

Liu, Jifeng

499

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si  

E-Print Network (OSTI)

Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct ? valley as ...

Sun, Xiaochen

500

Growth mechanism difference of sputtered HfO{sub 2} on Ge and on Si  

SciTech Connect

HfO{sub 2} films were deposited by the reactive sputtering on Ge and Si substrates simultaneously, and we found both the interface layer and the HfO{sub 2} film were thinner on Ge substrate than those on Si substrate. A metallic Hf layer has a crucial role for the thickness differences of both interface layer and HfO{sub 2} film, since those thickness differences were observed only when an ultrathin metallic Hf layer was predeposited before the reactive sputtering process. The role of metallic Hf in these phenomena is understandable by assuming the formation of a volatile Hf-Ge-O ternary compound at the early stage of the film growth. This result shows that the HfO{sub 2}/Ge system has an advantage over the HfO{sub 2}/Si system from the viewpoint of further reduction of the gate oxide film thickness.

Kita, Koji; Kyuno, Kentaro; Toriumi, Akira [Department of Materials Science, School of Engineering, University of Tokyo 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2004-07-05T23:59:59.000Z