National Library of Energy BETA

Sample records for ge le lv

  1. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  2. Aalborg Universitet Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    Aalborg Universitet Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed., & Guerrero, J. M. (2014). Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed.aau.dk on: juli 04, 2015 #12;Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed

  3. Assessment of the LV-S2 & LV-S3 Stack Sampling Probe Locations for Compliance with ANSI/HPS N13.1-1999

    SciTech Connect (OSTI)

    Glissmeyer, John A.; Antonio, Ernest J.; Flaherty, Julia E.; Amidan, Brett G.

    2014-09-30

    This document reports on a series of tests conducted to assess the proposed air sampling locations for the Hanford Tank Waste Treatment and Immobilization Plant (WTP) Group 1-2A exhaust stacks with respect to the applicable criteria regarding the placement of an air sampling probe. The LV-C2, LV-S2, and LV-S3 exhaust stacks were tested together as a group (Test Group 1-2A). This report only covers the results of LV-S2 and LV-S3; LV-C2 will be reported on separately. Federal regulations1 require that a sampling probe be located in the exhaust stack according to the criteria established by the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-1999, Sampling and Monitoring Releases of Airborne Radioactive Substances from the Stack and Ducts of Nuclear Facilities. 2 These criteria address the capability of the sampling probe to extract a sample that represents the effluent stream.

  4. Aalborg Universitet Power flow analysis for droop controlled LV hybrid AC-DC microgrids with virtual

    E-Print Network [OSTI]

    Vasquez, Juan Carlos

    Aalborg Universitet Power flow analysis for droop controlled LV hybrid AC-DC microgrids controlled LV hybrid AC-DC microgrids with virtual impedance. In Proceedings of the IEEE Power & Energy Interlinking converter PV WT IBS DC microgrid DC microgrid AC microgrid AC Load Figure 1. Structure

  5. Dynamics of two feline retroviruses (FIV and FeLV) within one population of cats

    E-Print Network [OSTI]

    Courchamp, Franck

    LV). The host is the domestic cat Felis catus. The model has been tested with data generated by a long population. The host is the domestic cat (Felis catus) and the two pathogens are two feline retroviruses

  6. Theoretical Population Biology 52, 60 70 (1997) Modelling the Feline Leukemia Virus (FeLV) in

    E-Print Network [OSTI]

    Courchamp, Franck

    1997-01-01

    LV) in Natural Populations of Cats (Felis catus) Emmanuelle Fromont1 UMR CNRS 5558, Universite Claude Bernard), and its impact in natural populations of domestic cats (Felis catus). For the study we built

  7. Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed Generator Units with

    E-Print Network [OSTI]

    Chaudhary, Sanjay

    Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed Generator Units power system. Being able to operate in both grid-connected and islanded mode, a microgrid manages and controls distributed energy resources, energy storage systems and loads, most of them are power electronic

  8. Le stage international et interculturel

    E-Print Network [OSTI]

    Laval, Université

    femme · Le rôle de l'infirmier /la perception · Les normes et les routines de soins · Le soulagement de

  9. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  10. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    an open online space for companies to collaborate and transform how they design and manufacture their products in the future NISKAYUNA, NY, June 2, 2015 - GE (NYSE:GE), a leading...

  11. On the stabilization of A-15 Nb3Ge with high Tc's F. Weiss, O. Demolliens, R. Madar, J. P. Senateur and R. Fruchart

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1137 On the stabilization of A-15 Nb3Ge with high Tc's F. Weiss, O. Demolliens, R. Madar, J. P (Reçu le 21 novembre 1983, accepté le 12 mars 1984) Résumé. 2014 Le composé supraconducteur Nb3Ge de hypothèse selon laquelle le composé Nb3Ge st0153chiométrique de température critique élevée est stabilisé

  12. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311

  13. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313

  14. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A die containing 400 ohmic MEMS switches, as viewed under a microscope, atop a U.S. dime. This device, made with GE's...

  15. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHE

  16. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE

  17. Hadronic production of J/[psi] at large [chi][sub F] in 800 GeV p+Cu and p+Be collisions

    SciTech Connect (OSTI)

    Kowitt, M.S.

    1992-12-01

    The differential cross-section d[sigma]/dx[sub F] for J/[psi] production in 800 GeV proton-nucleus collisions has been measured in the kinematic range 0.30 [le] x[sub F] [le] 0.95 and x[sub F] [lt] p[perpendicular] [lt] 5 GeV through the decay mode J/[psi] [yields] [mu][sup +][mu][sup [minus

  18. Le LHC, un tunnel cosmique

    ScienceCinema (OSTI)

    None

    2011-10-06

    Et si la lumière au bout du tunnel du LHC était cosmique ? En d?autres termes, qu?est-ce que le LHC peut nous apporter dans la connaissance de l?Univers ? Car la montée en énergie des accélérateurs de particules nous permet de mieux appréhender l?univers primordial, chaud et dense. Mais dans quel sens dit-on que le LHC reproduit des conditions proches du Big bang ? Quelles informations nous apporte-t-il sur le contenu de l?Univers ? La matière noire est-elle détectable au LHC ? L?énergie noire ? Pourquoi l?antimatière accumulée au CERN est-elle si rare dans l?Univers ? Et si le CERN a bâti sa réputation sur l?exploration des forces faibles et fortes qui opèrent au sein des atomes et de leurs noyaux, est-ce que le LHC peut nous apporter des informations sur la force gravitationnelle qui gouverne l?évolution cosmique ? Depuis une trentaine d?années, notre compréhension de l?univers dans ses plus grandes dimensions et l?appréhension de son comportement aux plus petites distances sont intimement liées : en quoi le LHC va-t-il tester expérimentalement cette vision unifiée ? Tout public, entrée libre / Réservations au +41 (0)22 767 76 76

  19. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaonforsupernovae model (Journal About DOE ButtonFSO HomefeatureGE

  20. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)about aMunich, GermanyAbout GE

  1. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio de Janeiro,theIsGE

  2. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  3. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  4. OUTLOOK 2007 -Configuration POP 1. Slectionnez le menu Outils

    E-Print Network [OSTI]

    Charette, André

    OUTLOOK 2007 - Configuration POP 1. Sélectionnez le menu Outils 2. Sélectionnez le menu Paramètres. Cliquez sur le bouton Suivant 20. Cliquez sur le bouton Terminer. #12;OUTLOOK 2007 - Configuration IMAP 1

  5. Automate avec sortie Automates et le temps

    E-Print Network [OSTI]

    Grigoras, .Romulus

    Automate avec sortie Automates et le temps Automates et l'inni Automates avec contrôle auxiliaire Généralisations Philippe Quéinnec 3 janvier 2011 1 / 26 #12;Automate avec sortie Automates et le temps Automates et l'inni Automates avec contrôle auxiliaire Plan 1 Automate avec sortie 2 Automates et le temps 3

  6. LE CONTRLE DE GESTION LOGISTIQUE HOSPITALIER

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , approvisionnement, transport, courrier, etc. Des réformes du management hospitalier français ont introduit une hospitalière dans le management des établissements hospitaliers, la forme qu'exerce le contrôle de gestion1 LE CONTRÔLE DE GESTION LOGISTIQUE HOSPITALIER Nicolas PETIT, doctorant à l'IGR-IAE de l

  7. Continuity of the phase transition for planar random-cluster and Potts models with $1\\le q\\le4$

    E-Print Network [OSTI]

    Hugo Duminil-Copin; Vladas Sidoravicius; Vincent Tassion

    2015-05-15

    This article studies the planar Potts model and its random-cluster representation. We show that the phase transition of the nearest-neighbor ferromagnetic $q$-state Potts model on $\\mathbb Z^2$ is continuous for $q\\in\\{2,3,4\\}$, in the sense that there exists a unique Gibbs state, or equivalently that there is no ordering for the critical Gibbs states with monochromatic boundary conditions. The proof uses the random-cluster model with cluster-weight $q\\ge1$ (note that $q$ is not necessarily an integer) and is based on two ingredients: 1. The fact that the two-point function for the free state decays sub-exponentially fast for cluster-weights $1\\le q\\le 4$, which is derived studying parafermionic observables on a discrete Riemann surface. 2. A new result proving the equivalence of several properties of critical random-cluster models: - the absence of infinite-cluster for wired boundary conditions, - the uniqueness of infinite-volume measures, - the sub-exponential decay of the two-point function for free boundary conditions, - a Russo-Seymour-Welsh type result on crossing probabilities in rectangles with arbitrary boundary conditions. The result leads to a number of consequences concerning the scaling limit of the random-cluster model with $1\\le q \\le 4$. It shows that the family of interfaces (for instance for Dobrushin boundary conditions) are tight when taking the scaling limit and that any sub-sequential limit can be parametrized by a Loewner chain. We also study the effect of boundary conditions on these sub-sequential limits. Let us mention that the result should be instrumental in the study of critical exponents as well.

  8. Le Modle des Espaces de Travail I. Introduction.............................................................. 14

    E-Print Network [OSTI]

    Donsez, Didier

    Chapitre 3 Le Modèle des Espaces de Travail I. Introduction.............................................................. 14 II. Le Modèle Client-Serveur ........................................14 III. Le Modèle des Espaces de Travail.............................20 IV. Espaces de Travail et Services

  9. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  10. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  11. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    control platform which can be used to host intelligent grid management software for microgrids. A typical GE control platform which can be used to host intelligent grid management...

  12. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane Technology Laboratory at GE's China Technology Center have successfully...

  13. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  14. La quête du bonheur en France au 18e siècle : le bonheur individuel et le bonheur collectif dans le roman utopique, libertin et sentimental

    E-Print Network [OSTI]

    Fernandez-Nurdin, Delphine Isabelle

    2009-06-15

    Cette thèse se propose d'examiner le concept du bonheur qui semble être devenu une préoccupation majeure au XVIIIe siècle en France. Or, si le bonheur individuel et le bonheur collectif sont tous deux recherchés, ils ne ...

  15. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and it will become hotter. Move it away (demagnetization) and the food cools down. GE researchers predict the cooling refrigerators could reduce energy consumption by 20%, in...

  16. Flexible Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step...

  17. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 2, Tasks 3-4, Final Online Wind Plants & Frequency Responsive Load Reserves

  18. JOURNEE MONDIALE DE LUTTE CONTRE LE SIDA 2014 LE PROGRAMME BREST

    E-Print Network [OSTI]

    Brest, Université de

    ludique « sexe et chocolat ». - Sur le temps de midi, les infirmiers du SUMPPS de l'UBO et les étudiants

  19. Tecnologie ICT per le Smart City Prof. R. Laurini Tecnologie ICT per le Smart City

    E-Print Network [OSTI]

    Laurini, Robert

    Tecnologie ICT per le Smart City Prof. R. Laurini 1 Tecnologie ICT per le Smart City 1 ­ Le smart-fertilization tra ICT e Smart City 4 ­ Problemi emergenti 5 ­ Conclusioni Definizione di Carlo Ratti (MIT) · Una, efficiente, ­ aperta, collaborativa, ­ creativa, digitale ­ e green European Smart Cities · Volendo essere

  20. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  1. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 449# GE 110 Geological Engineering CE 271 GEOE 378 4TH YEAR 3RD YEAR 2ND YEAR 1ST YEAR or PHYS 128

  2. Le Nigeria sous Obasanjo. Violences et dmocratie

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    #12;5 LE DOSSIER Le Nigeria sous Obasanjo. Violences et démocratie Coordonné par Laurent Fourchard Nigeria Au Nigeria, de nombreux journalistes et chercheurs ont associé la réémer- gence de conflits'au Nigeria il soit à peine plus aisé de compter les morts que de recenser les vivants2. La comparaison 1. Je

  3. Service des finances Le saviez-vous ?

    E-Print Network [OSTI]

    respectant les normes ISO 14 024. De plus, ces certifications attestent que les produits certifiés ont étéService des finances Le saviez-vous ? Les certifications de produits Approvisionnement responsable Penser autrement, acheter mieux ! Les certifications officielles sont le meilleur moyen de repérer

  4. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    salt from ice New solution draws from the GE Store, integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and water processing NISKAYUNA, NY,...

  5. Energy Frontier Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    include GE Global Research, Yale University-Crabtree Group, Yale University-Batista Group, Stanford University and Lawrence Berkeley National Laboratory. GE Global...

  6. Edison Summit Brings GE Leaders Together | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    We are ONE Edison Aisha Yousuf 2014.03.21 "We are ONE Edison" was the theme of the first GE Global Edison Summit held February 16-18, 2014 at Coronado Springs Resort in Orlando,...

  7. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  8. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE

  9. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315

  10. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window)...

  11. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  12. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping the contamination of non-specific large vessel signals. Animal studies have used non- conventional functional minimizing the contributions of extravascular BOLD signals around large vessels due to the refocusing pulse

  13. LV8115 2..5

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResource andfirstDevice UW Madison LineTransitionLUGCore

  14. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method

  15. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  16. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  17. LHC, le Big Bang en éprouvette

    ScienceCinema (OSTI)

    None

    2011-10-06

    Notre compréhension de l?Univers est en train de changer? Bar des Sciences - Tout public Débat modéré par Marie-Odile Montchicourt, journaliste de France Info. Evenement en vidéoconférence entre le Globe de la science et de l?innovation, le bar le Baloard de Montpellier et la Maison des Métallos à Paris. Intervenants au CERN : Philippe Charpentier et Daniel Froideveaux, physiciens au CERN. Intervenants à Paris : Vincent Bontemps, philosophe et chercheur au CEA ; Jacques Arnould, philosophe, historien des sciences et théologien, Jean-Jacques Beineix, réalisateur, producteur, scénariste de cinéma. Intervenants à Montpellier (LPTA) : André Neveu, physicien théoricien et directeur de recherche au CNRS ; Gilbert Moultaka, physicien théoricien et chargé de recherche au CNRS. Partenariat : CERN, CEA, IN2P3, Université MPL2 (LPTA) Dans le cadre de la Fête de la science 2008

  18. agir au Sud avec le Sud et

    E-Print Network [OSTI]

    « moins avancés », tels que le Mozambique, l'Éthiopie et l'Angola. Cer- tains d'entre eux ont connu une Africa (Afrique du Sud, Cap Town); · LBMV, Laboratoire de biotechnologie microbienne et végétale (Maroc

  19. Le Guerrou DISS. ETH NO. 16533

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Erwan Le Guerroué 2006 DISS. ETH NO. 16533 Sedimentology & Chemostratigraphy of the Ediacaran Shuram Formation, Nafun Group, Oman tel-00331341,version1-16Oct2008 #12;DISS. ETH NO. 16533 Sedimentology

  20. Le rane delle risaie Osservazioni sugli Iperolidi del

    E-Print Network [OSTI]

    maschio. I sessi possono tuttavia di- stinguersi notevolmente per la colo- razione: le femmine hanno

  1. Paris, le 24 janvier 2013 MNAGERIE, LE ZOO DU JARDIN DES PLANTES

    E-Print Network [OSTI]

    ://dsifilex.mnhn.fr/get?k=mac3yq7XA69OYRN5VUp Théodora, 24 ans, est née le 5 mai 1988. Elle est arrivée le 28 novembre 2007 du Cécile Brissaud : 01 40 79 80 75 / brissaud@mnhn.fr Jérôme Munier : 01 40 79 54 42 / munier@mnhn.fr #12;

  2. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    ND YEAR 1ST YEAR 3RD YEAR # These courses can be taken in either term.*must meet specific Hum/SocSci@# Bus Sci/HSS#Design Elec.#* T.E.*# T.E.*#GE 449# ME 314 or PHYS 128 or GEOL 121 4TH YEAR 2

  3. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 1, Tasks 1-2, FinalRose Michael O'Connor Sundar Venkataraman Revision 1 Date: 12/19/2012 #12;Ancillary Services Definitions.................................................................................................................... 7 3.1 Task 1: Identify and define ancillary services needed for integration of new generation

  4. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  5. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  6. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    Engineering * must meet specific requirements # These courses can be taken in either term. 2ND YEAR 3RD YEAR 4 431 Last editted Apr 4, 2006 ^offered in alternate years; take in either 3rd or 4th year CHEM 242TH YEAR 1ST YEAR CHE 422 CHE 232 HSS@# 2005-2006 or PHYS 128 or GEOL 121 or AB E 312 GE 300# CHE 332

  7. Le projet H2M : Hbergement Mutualis Montpellier

    E-Print Network [OSTI]

    van Tiggelen, Bart

    Le projet H2M : Hébergement Mutualisé à Montpellier Formation Datacentres écoinfo à Cargèse Le 30): certains de nos datacentres sont saturés, et ne peuvent plus accueillir de nouvelles baies (une solution

  8. PRESSIONS ET BUDGET: UNE ETUDE QUALITATIVE DANS LE SECTEUR

    E-Print Network [OSTI]

    Boyer, Edmond

    PRESSIONS ET BUDGET: UNE ETUDE QUALITATIVE DANS LE SECTEUR HOSPITALIER Résumé Le courant Reliance secteur hospitalier public. Mots clés : pression budgétaire, manipulation de données, conflit de rôle 31 praticiens hospitaliers dans deux Centres Hospitaliers Universitaires. Ce choix est justifié par

  9. Curriculum Vit Frederic LE MOU EL

    E-Print Network [OSTI]

    Le Mouël, Frédéric

    / INRIA CITI Laboratory INSA Lyon B^atiment Claude Chappe 6 avenue des Arts F-69621 Villeurbanne Cedex Tel. : +33 472 436 422 Fax : +33 472 436 227 E-mail : frederic.le-mouel@insa-lyon.fr Web : http://citi, France. ­ Researcher in the INRIA CITI Laboratory (Innovation Center in Telecommunications and Services

  10. Michel Grossetti Universit de Toulouse-le-

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Michel Grossetti CERS Université de Toulouse-le- Mirail, 5, Allées A. Machado, 31058 Toulouse : 05 57 57 19 72 mail : Philippe.Losego@lapsac.u- bordeaux2.fr Béatrice Milard CERS Université de and towns and the study of scientific publications. This allow us to evaluate the effects

  11. Les fonctions holomorphes et méromorphes dans le cercle-unité

    E-Print Network [OSTI]

    A. Bloch

    2011-06-28

    MÉMORIAL DES SCIENCES MATHÉMATIQUES. A. BLOCH. Les fonctions holomorphes et méromorphes dans le cercle-unité. Mémorial des sciences ...

  12. LE JOURNAL DE PHYSIQUE CENT ANS DE JOURNAL DE PHYSIQUE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 LE JOURNAL DE PHYSIQUE CENT ANS DE JOURNAL DE PHYSIQUE J. LANGEVIN Pour marquer le centenaire du Journal de Physique nous publions ci-dessous un article de M. Jean Langevin, qui retrace l'histoire du Journal depuis sa fondation. Monsieur J. Langevin a occupé pendant de longues années le poste de Rédacteur

  13. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212 can be taken in either term. GE 124 MATH 110 MATH 124CHEM 115 PHYS 155 3RD YEAR GE 125 GE 110 COMM 102

  14. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptionsProteinTotal natural gasPurchase, Delivery,Purdue, GE to

  15. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act Recovery ActARM OverviewAbout GE Global Research

  16. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming UpgradesArea:Benefits ofofStackOn thePower ofGE

  17. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  18. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclear SecurityChattanChemistry ofNanChevron, GE form

  19. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News Publications Traditional Knowledge KiosksAboutHelp & Reference Users AdvAncedGE

  20. GE Global Research in San Ramon, California

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers Leadership Programs What's new in San Ramon Ars Technica: Analyzing the Internet of Things GE Unveils High-Speed Network Infrastructure to Connect Machines, Data...

  1. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  2. Hadronic production of J/{psi} at large {chi}{sub F} in 800 GeV p+Cu and p+Be collisions

    SciTech Connect (OSTI)

    Kowitt, M.S.

    1992-12-01

    The differential cross-section d{sigma}/dx{sub F} for J/{psi} production in 800 GeV proton-nucleus collisions has been measured in the kinematic range 0.30 {le} x{sub F} {le} 0.95 and x{sub F} {lt} p{perpendicular} {lt} 5 GeV through the decay mode J/{psi} {yields} {mu}{sup +}{mu}{sup {minus}}. The nuclear dependence of J/{psi} production over this range was measured using copper and beryllium targets. The differential cross sections are in good agreement with the predictions of the symbolical parton duality model. The data show no evidence for an intrinsic charm component in the proton. The ratio of the differential cross sections for copper and beryllium shows a suppression of J/{psi} production in copper which increases with increasing x{sub F}.

  3. Le processus de commissionnement vu par le maitre d'ouvrage 

    E-Print Network [OSTI]

    Moro, M.

    2004-01-01

    stream_source_info ESL-IC-04-10-15.pdf.txt stream_content_type text/plain stream_size 6097 Content-Encoding ISO-8859-1 stream_name ESL-IC-04-10-15.pdf.txt Content-Type text/plain; charset=ISO-8859-1 Le processus de... commissionnement vu par le maître d?ouvrage Marc MORO UCANSS ?¾?¾ Activités abritées Immeuble administratif, centre informatique, centre de formationprofessionnelle, maison de la petite enfance, centre de vacances, établissement médicalisé, maison de retraite, etc...

  4. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  5. GE Turbine Parts www.edisonmachine.com

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    GE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from's smallest windmills to power cell phones 1/17/2014http://www.gizmag.com/worlds-smallest-windmill-energy

  6. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  7. Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  8. Developpement WebPHP pour le Web Developpement Web

    E-Print Network [OSTI]

    Richer, Jean-Michel

    D´eveloppement WebPHP pour le Web D´eveloppement Web PHP pour le Web Jean-Michel Richer jean-michel.richer@univ-angers.fr http://www.info.univ-angers.fr/pub/richer 2008 1 / 130 #12;D´eveloppement WebPHP pour le Web Objectif´eveloppement Web fonctionnalit´es de base du langage acc`es aux bases de donn´ees (PDO) la couche objet (classe, h

  9. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  10. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  11. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  12. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  13. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

  14. Admission par internet et sur dossier. Le Rectorat de l'Acadmie de Nantes coordonne le

    E-Print Network [OSTI]

    Di Girolami, Cristina

    'entreprise (achats, logistique, marketing, ventes...) : option GMO (Gestion et Management des Organisations Comptabilité et de Gestion (DCG) - Gestion et Management des Organisations (GMO) - Gestion des Ressources financier Option GMO : chargé de clientèle, responsable d'agence, chef de projet... Option GRH

  15. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  16. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  17. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Try watching this video on www.youtube.com, or enable...

  18. Work & Life at San Ramon | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Software Women's Network TBD Celebrations GE Software Technology Conference This event allows...

  19. Rocket Science? No, It's Harder | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    says Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research Europe. Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research, Europe Juan...

  20. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  1. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  2. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  3. Louvain-la-Neuve, le 6 septembre 2012 Recherche UCL

    E-Print Network [OSTI]

    Nesterov, Yurii

    fournir une avancée dans le domaine des batteries lithium-ion flexibles. Les résultats montrent comment le mettre au point un procédé de recyclage du silicium pour produire des batteries lithium-ion de haute la durée de vie des batteries au lithium Une équipe internationale, dont trois chercheurs de l

  4. Le 29 mai 2005 Aprs une campagne longue et

    E-Print Network [OSTI]

    Meyer-Vernet, Nicole

    Le 29 mai 2005 Après une campagne longue et passionnante, une large majorité de Français (54 Parlement · Le Parlement ne représente pas correctement l'opinion des Français. En 2005, quand 54,7% des avis sur l'Europe, dire si les politiques qu'elle mène depuis 20 ans ont rempli leurs promesses · Nous

  5. LE 6 AVRIL 2004 RGIME DE RETRAITE DE

    E-Print Network [OSTI]

    Skorobogatiy, Maksim

    , par le biais d'un appel d'offres, de la société Mercer, Consultation en gestion de placement pour'École. Vers la fin des années 90, les fonds de la firme de placement américaine Lancer Management Group Mercer. Recherche d'un nouveau gestionnaire d'actions américaines. Du point de vue financier, le Comité

  6. www.le.ac.uk/physics UNDERGRADUATE COURSES IN

    E-Print Network [OSTI]

    Banaji,. Murad

    www.le.ac.uk/physics UNDERGRADUATE COURSES IN Physics and Astronomy Department of Physics and Astronomy #12;www.le.ac.uk/physics-ug "The Leicester Department of Physics and Astronomy offers superb courses. Students get a broader exposure to different areas of physics and astronomy than is possible

  7. Lissieu, le 12 juin 2015 Communiqu de presse

    E-Print Network [OSTI]

    Chamroukhi, Faicel

    Lissieu, le 12 juin 2015 Communiqué de presse Détection et neutralisation de drones civils développement de l'usage des drones pour des applications civiles et suite aux survols d'opérateurs d zones sensibles vis-à-vis du survol des drones aériens. Le projet SPID a ainsi été retenu, avec pour

  8. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  9. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I never thought I would get the incredible opportunity to become a summer intern at the GE Global Research Center, amongst such brilliant and tenacious individuals. I have been...

  10. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Niskayuna, NY, Christine is responsible for working with both R&D leaders at GE's industrial businesses and with strategic partners to set strategy for growth, and to...

  11. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet and Brilliant Factory. This transition marks another chapter in GE's transformation to become the world's premiere Digital Industrial company. Enabled by a...

  12. Measurement of the B+ production cross-section in p anti-p collisions at s**(1/2) = 1960-GeV

    SciTech Connect (OSTI)

    Abulencia, A.; Adelman, J.; Affolder, T.; Akimoto, T.; Albrow, M.G.; Ambrose, D.; Amerio, S.; Amidei, D.; Anastassov, A.; Anikeev, K.; Annovi, A.; /Taiwan, Inst. Phys.

    2006-12-01

    The authors present a new measurement of the B{sup +} meson differential cross section d{sigma}/dP{sub T} at {radical}s = 1960 GeV. The data correspond to an integrated luminosity of 739 pb{sup -1} collected with the upgraded CDF detector (CDF II) at the Fermilab Tevatron collider. B{sup +} candidates are reconstructed through the decay B{sup +} {yields} J/{psi} K{sup +}, with J/{psi} {yields} {mu}{sup +}{mu}{sup -}. The integrated cross section for producing B{sup +} mesons with p{sub T} {ge} 6 GeV/c and |y| {le} 1 is measured to be 2.78 {+-} 0.24 {mu}b.

  13. Measurements of the Electron-Helicity Dependent Cross Sections of Deeply Virtual Compton Scattering with CEBAF at 12 GeV

    SciTech Connect (OSTI)

    J. Roche; C. E. Hyde-Wright; B. Michel; C. Munoz Camacho; et al. (The Jefferson Lab Hall A Collaboration)

    2006-09-11

    We propose precision measurements of the helicity-dependent and helicity independent cross sections for the ep {yields} ep{gamma} reaction in Deeply Virtual Compton Scattering (DVCS) kinematics. DVCS scaling is obtained in the limits Q{sup 2} >> {Lambda}{sub QCD}{sup 2}, x{sub Bj} fixed, and -{Delta}{sup 2} = -(q-q{prime}){sup 2} << Q{sup 2}. We consider the specific kinematic range Q{sup 2} > 2 GeV{sup 2}, W > 2 GeV, and -{Delta}{sup 2} {le} 1 GeV{sup 2}. We will use our successful technique from the 5.75 GeV Hall A DVCS experiment (E00-110). With polarized 6.6, 8.8, and 11 GeV beams incident on the liquid hydrogen target, we will detect the scattered electron in the Hall A HRS-L spectrometer (maximum central momentum 4.3 GeV/c) and the emitted photon in a slightly expanded PbF{sub 2} calorimeter. In general, we will not detect the recoil proton. The H(e,e{prime}{gamma})X missing mass resolution is sufficient to isolate the exclusive channel with 3% systematic precision.

  14. Approved Module Information for LE1083, 2014/5 Module Title/Name: Words & Meaning Module Code: LE1083

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    and use data and information from primary sources (e.g. corpora) and secondary sources (e.g. dictionariesApproved Module Information for LE1083, 2014/5 Module Title/Name: Words & Meaning Module Code: LE Module Credits: 20 Module Management Information Module Leader Name Garry Plappert Email Address g

  15. A Mathematical Model for Hurricanes Alain-Yves LeRoux, Marie-Noelle LeRoux

    E-Print Network [OSTI]

    A Mathematical Model for Hurricanes Alain-Yves LeRoux, Marie-Noelle LeRoux Abstract The source outside a circular crown. The internal circle represents the eye wall of the hurricane and corresponds the hurricane. 1 Introduction A source wave is a wave whose velocity is completely determined by a root

  16. Approved Module Information for LE1008, 2014/5 Module Title/Name: Grammar & Meaning Module Code: LE1008

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE1008, 2014/5 Module Title/Name: Grammar & Meaning Module Code: LE1008 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 10 Module Management Information Module Leader Name Jack Grieve Email Address grievej1

  17. Approved Module Information for LE2057, 2014/5 Module Title/Name: Computer Mediated Communication Module Code: LE2057

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE2057, 2014/5 Module Title/Name: Computer Mediated Communication Module Code: LE2057 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Nur Hooton Email Address n

  18. Approved Module Information for LE2053, 2014/5 Module Title/Name: Variations of English Module Code: LE2053

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE2053, 2014/5 Module Title/Name: Variations of English Module Code: LE2053 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Jack Grieve Email Address grievej1

  19. Une nouvelle grille d'analyse pour le contrle de gestion hospitalier : le contrle intgr de Simons

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Une nouvelle grille d'analyse pour le contrôle de gestion hospitalier : le contrôle intégré de'Entreprise et du Management, Université de Montpellier 1, jeldds@hotmail.fr Thierry NOBRE, Professeur des Universités, Ecole de Management Strasbourg thierry.nobre@unistra.fr Résumé : Cette communication a pour but d

  20. Assessment of the Group 5-6 (LB C2, LB S2, LV S1) Stack Sampling Probe Locations for Compliance with ANSI/HPS N13.1 1999

    SciTech Connect (OSTI)

    Glissmeyer, John A.; Flaherty, Julia E.; Piepel, Gregory F.

    2011-03-11

    This document reports on a series of tests to assess the proposed air sampling locations for the Hanford Tank Waste Treatment and Immobilization Plant (WTP) Group 5-6 exhaust stacks with respect to the applicable criteria regarding the placement of an air sampling probe. The LB-C2, LV-S1, and LB S2 exhaust stacks were tested together as a group (Test Group 5-6) because the common factor in their design is that the last significant flow disturbance upstream of the air sampling probe is a reduction in duct diameter. Federal regulations( ) require that a sampling probe be located in the exhaust stack according to the criteria of the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-1999, Sampling and Monitoring Releases of Airborne Radioactive Substances from the Stack and Ducts of Nuclear Facilities. These criteria address the capability of the sampling probe to extract a sample that represents the effluent stream. The testing on scale models of the stacks conducted for this project was part of the River Protection Project—Waste Treatment Plant Support Program under Contract No. DE-AC05-76RL01830 according to the statement of work issued by Bechtel National Inc. (BNI, 24590-QL-SRA-W000-00101, N13.1-1999 Stack Monitor Scale Model Testing and Qualification, Revision 1, 9/12/2007) and Work Authorization 09 of Memorandum of Agreement 24590-QL-HC9-WA49-00001. The internal Pacific Northwest National Laboratory (PNNL) project for this task is 53024, Work for Hanford Contractors Stack Monitoring. The testing described in this document was further guided by the Test Plan Scale Model Testing the Waste Treatment Plant LB-C2, LB-S2, and LV-S1 (Test Group 5-6) Stack Air Sampling Positions (TP-RPP-WTP-594). The tests conducted by PNNL during 2009 and 2010 on the Group 5-6 scale model systems are described in this report. The series of tests consists of various measurements taken over a grid of points in the duct cross-section at the designed sampling probe locations and at five duct diameters up and downstream from the design location to accommodate potential construction variability. The tests were done only at the design sampling probe location on the scale model of LB-S2 because that ductwork was already constructed. The ANSI/HPS N13.1-1999 criteria and the corresponding results of the test series on the scale models are summarized in this report.

  1. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  2. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  3. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  4. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  5. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  6. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  7. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Colozza, A.J.; Brinker, D.J.; Bents, D.J.

    1994-12-31

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  8. Design of a GaAs/Ge solar array for unmanned aerial vehicles

    SciTech Connect (OSTI)

    Scheiman, D.A.; Brinker, D.J.; Bents, D.J.; Colozza, A.J.

    1995-03-01

    Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

  9. Mod. 021/2012/SSS Spett. le Politecnico di Milano

    E-Print Network [OSTI]

    Mod. 021/2012/SSS Spett. le Politecnico di Milano Area Servizi agli Studenti e ai Dottorandi P.za .________________________________________________________________________________________________________________________________ Riservato alla Segreteria: For administrative use only: Visto documento Document submitted: patente / drive

  10. Ben LePage, Ph.D. PECO Energy Company

    E-Print Network [OSTI]

    Charles, Donald

    -specific biochemical preservation revealed by comparative pyrolysis analysis of Tertiary Metasequoia fossil.A. LePage & S.P. Werts. 2004. Methanogenesis in Eocene Arctic soils inferred from 13 C of tree fossil

  11. Pisa Dependable Computing Ente Per le Nuove Tecnologie,

    E-Print Network [OSTI]

    Firenze, Università degli Studi di

    Pisa Dependable Computing Center Ente Per le Nuove Tecnologie, l'Energia e l'Ambiente del tool e di come esse cambino, a seconda del tipo di problema e di ambiente. La sperimentazione si e

  12. LE SYSTEME D'INFORMATION DE GESTION HOSPITALIER

    E-Print Network [OSTI]

    Boyer, Edmond

    LE SYSTEME D'INFORMATION DE GESTION HOSPITALIER : QUELLES CARACTERISTIQUES PRIVILEGIER POUR'hôpital public de court séjour. Abstract: Accounting Management Tools Implementation requires a Management's capabilities to make easier the Accounting Management Tools Implementation in a particular organisation

  13. Gomatique --13/2003. Les SIG sur le web, pages 323 338 Information gospatiale dans internet

    E-Print Network [OSTI]

    Géomatique -- 13/2003. Les SIG sur le web, pages 323 à 338 Information géospatiale dans internet documents tels les cartes, pages web, images et jeux de données géographiques décrivent, représentent ou utiliser le nom d'un pays avec le nom d'une ville pour rechercher des pages web portant sur le tourisme de

  14. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  15. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  16. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  17. Revue Prvenir N 40 Travail et sant , 2001 La fatigue, le stress et le travail motionnel de l'infirmire

    E-Print Network [OSTI]

    Boyer, Edmond

    évident lorsque l'on aborde lestressetlafatigue mentale. Dans l'imaginaire infirmier, l médical et non le soin infirmier; ainsi cette infirmière de pneumologie pédiatrique : «La prescription est

  18. Le pilotage des centres de recherche des ples de comptitivit Le cas du centre intgr MIRCen1

    E-Print Network [OSTI]

    Boyer, Edmond

    (Service hospitalier Frédéric Joliot), présent depuis avril 1959 à Orsay, NeuroSpin, inauguré en novembre. hal-00320879,version1-11Sep2008 Manuscrit auteur, publié dans "Vers le KM 2.0 : quel management des

  19. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  20. 10/2/2014 LE Advertising Information http://uwpress.wisc.edu/journals/journals/le_ads.html 1/2

    E-Print Network [OSTI]

    Sprott, Julien Clinton

    10/2/2014 LE Advertising Information http://uwpress.wisc.edu/journals/journals/le_ads.html 1 of this page) Print Ad Rates Cost Width Height Full page (B&W) $530 51/2" 8" Half page (B&W) $440 51/2" 37/8" Cover 3 or 4 (Full page, B&W) $560 51/2" 8" Online Ad Rates Cost Width Height Leaderboard $450 728px

  1. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  2. Updated 8/28/2014 New GE Requirements & Environmental Studies Advising

    E-Print Network [OSTI]

    Updated 8/28/2014 New GE Requirements & Environmental Studies Advising Course Concentration(s) Lower Division GE Upper Division GE Overlay(s) AIS 310

  3. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  4. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic must be supplied (1) to create viscous flow units by breaking bonds between atoms and molecules, and (2

  5. Effects of Ge replacement in GeTe by [Ag+Sb] on thermoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GeTe by Ag+Sb on thermoelectric properties and NMR spectra Requirements for student: general physics and chemistry courses, and desire to work in experimental laboratory. This...

  6. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  7. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    offered 19 programs and counted 375 participants; this year, Girls Who Code will offer 60 programs reaching close to 1,200 girls in nine cities nationwide. GE joins other...

  8. Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis...

  9. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research 2-3-10-v Crowdsourcing...

  10. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  11. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  12. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  13. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  14. 'Jurassic World': Are Hybrid Dinosaurs Possible? | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Possible? Inspired by the cloned dinosaurs in the "Jurassic Park" reboot, "Jurassic World," Sally Le Page explores the science behind genetically modified cloning to see if it...

  15. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  16. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  17. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  18. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  19. Particle Production at 3 GeV X. Ding, UCLA

    E-Print Network [OSTI]

    McDonald, Kirk

    = 50m 0.02976 (neg: 0.01206, pos: 0.01770) Carbon 3 GeV, Z = 0m 0.03341 (neg: 0.01370, pos: 0.01971) Mercury 3 GeV, Z = 50 m 0.02096 (neg: 0.01070, pos: 0.01026) Mercury 3 GeV, Z = 0 m 0.02496 (neg: 0.01273, pos: 0.01223) Mercury 8 GeV, Z = 50 m 0.0263 (neg: 0.0136, pos: 0.0127) Mercury 8 GeV, Z = 0m 0

  20. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  1. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  2. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  3. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  4. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  5. Les rseaux optiques et le refroidissement par bande latrale 1 Effets collectifs et diffusion multiple . . . . . . . . . . 2

    E-Print Network [OSTI]

    Dalibard, Jean

    expériences avec des atomes froids est l'at- teinte du régime quantique pour le gaz, régime dans lequel les'atomes de densité uniforme. Les obstacles principaux sont la dif- fusion multiple de photons dans le gaz

  6. Service Provision in Disconnected Mobile Ad hoc Networks Nicolas Le Sommer

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Service Provision in Disconnected Mobile Ad hoc Networks Nicolas Le Sommer Valoria Laboratory, University of South Brittany Nicolas.Le-Sommer@univ-ubs.fr Abstract With the proliferation of mobiles devices

  7. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  8. Communiqu de presse Lyon, le 20 mars 2014

    E-Print Network [OSTI]

    Dellandréa, Emmanuel

    Communiqué de presse Lyon, le 20 mars 2014 3 000 étudiants pour la 32ème édition du Challenge Centrale Lyon Ce weekend du 22 et 23 mars 2014, l'école Centrale Lyon (Ecully) accueille sur son campus

  9. Pisa Dependable Computing Ente Per le Nuove Tecnologie,

    E-Print Network [OSTI]

    Firenze, Università degli Studi di

    Pisa Dependable Computing Center Ente Per le Nuove Tecnologie, l'Energia e l'Ambiente Modelli Ingegneria Informatica, Univerista' di Pisa, via Diotisalvi 2 56127 PISA, Italy mura@iet.unipi.it * * PDCC - Consorzio Pisa Ricerche, Piazza A. D'Ancona, 1 - 56127 PISA, Italy S

  10. se de doctorat en informatique Comprendre le Web cach

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    niveau à l'aide de telles descriptions. Abstract e hidden Web (also known as deep or invisible Web'informations, complexité Keywords: hidden Web, deep Web, databases, information extraction, complexity tel-00198150,versionèse de doctorat en informatique Comprendre le Web caché Understanding the Hidden Web Pierre

  11. Molten salts and nuclear energy production Christian Le Bruna*

    E-Print Network [OSTI]

    Boyer, Edmond

    with solid fuels, liquid fuel in molten salt reactor, solvents for spent nuclear solid fuel in the caseMolten salts and nuclear energy production Christian Le Bruna* a Laboratoire de Physique or chlorides) have been taken in consideration very soon in nuclear energy production researches

  12. Data Mining et Statistique Philippe Besse # , Caroline Le Gall + ,

    E-Print Network [OSTI]

    Besse, Philippe

    Data Mining et Statistique Philippe Besse # , Caroline Le Gall + , Nathalie Raimbault # & Sophie Sarpy § Râ??esumâ??e Cet article propose une introduction au Data Mining. Celle­ci prend la forme d'une r permettent de tirer quelques ensei­ gnements sur les pratiques du data mining : choix d'une mâ??ethode, comp

  13. Paris, janvier 2013 SOPHIE FERREIRA LE MORVAN NOMME

    E-Print Network [OSTI]

    Ferreira Le Morvan, 39 ans, a été nommée directrice du Parc zoologique de Paris, dit zoo de Vincennes, à collection publique mondiale de l'artiste, fonction qu'elle a exercée pendant 6 ans en accompagnement de la://parczoologiquedeparis.fr/ Contacts presse Cécile Brissaud / 01 40 79 80 75 / brissaud@mnhn.fr Jérôme Munier / 01 40 79 54 42 / munier

  14. Pisa Dependable Computing Ente Per le Nuove Tecnologie,

    E-Print Network [OSTI]

    Firenze, Università degli Studi di

    in questa famiglia le FMEA (Failure Mode Effect Analysis). La seconda contiene i metodi che proce- dendo sistema al livello dei componenti. I fault-tree rappresentano un tipico esempio di tali metodi. 2.1 FMEA La FMEA é una tecnica induttiva il cui principio fondamentale é l'analisi, per ogni componente, degli

  15. Algorithms for Determining Network Robustness Heath J. LeBlanc

    E-Print Network [OSTI]

    Koutsoukos, Xenofon D.

    Algorithms for Determining Network Robustness Heath J. LeBlanc Department of Electrical & Computer.koutsoukos@vanderbilt.edu ABSTRACT In this paper, we study algorithms for determining the robustness of a network. Network robustness algorithms that use purely local strategies are able to succeed in the presence of adversary nodes. Therefore

  16. LE CONTROLE DE GESTION EN MILIEU HOSPITALIER : UNE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    LE CONTROLE DE GESTION EN MILIEU HOSPITALIER : UNE REPONSE A L'EMERGENCE DE RISQUES)product-based risk ; 2) procedure-based risk ; 3) individual-based risk. Management controls appears, risques organisationnels, relations interpersonnelles. Keywords : management control, organisational risks

  17. Prsente pour obtenir le grade de L'UNIVERSIT PARISEST

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    modeling of transport and freezing phenomena within unsaturated porous media Soutenue le 23 septembre 2013. This thesis deals with the transport properties and then the freezing behaviors of unsaturated porous media Présentée par : Rongwei YANG Sujet de la thèse : Contributions à la modélisation micromécanique du transport

  18. Graphene Enhanced Wireless Sensors Taoran Le, Trang Thai, Vasileios Lakafosis,

    E-Print Network [OSTI]

    Tentzeris, Manos

    Graphene Enhanced Wireless Sensors Taoran Le, Trang Thai, Vasileios Lakafosis, Manos Tentzeris utilizing both analog and digital principles. The sensors will utilize Graphene-based thin films integrated. Our thin films are produced from water-based, inkjet printed graphene oxide (GO) on paper

  19. Resource Management for Parallel Adaptive Components Luc Courtrai, Frdric Guidec, Nicolas Le Sommer, Yves Maho

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Sommer, Yves Mahéo VALORIA, Université de Bretagne-Sud, France {Luc.Courtrai Frederic.Guidec Nicolas.Le-Sommer

  20. Etude cologique en immunofluorescence de Rhizobium japonicum dans le sol et la rhizosphre

    E-Print Network [OSTI]

    Boyer, Edmond

    'une association efficiente entre la plante hôte et la bactérie du genre Rhizobium. Lorsque le Rhizobium est absent

  1. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082 P2014 CollegiateVanderbilt, GE Team

  2. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT Build

  3. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT

  4. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| Department ofStephenSkinner,Past and Present EERE Budget PastGE's

  5. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »GambitI

  6. Louvain-la-Neuve, le 27 janvier 2011 Hunza ! : images du Pakistan, par Benoit Sneessens

    E-Print Network [OSTI]

    Nesterov, Yurii

    Louvain-la-Neuve, le 27 janvier 2011 « Hunza ! » : images du Pakistan, par Benoit Sneessens Du 1er trois ans, l'artiste a parcouru à pieds les sentiers escarpés de la vallée de Hunza, au Nord du Pakistan reportages à l'étranger, s'envole pour le Pakistan. Le but de son expédition : confronter l'image du pays

  7. La Qualit l'ENSEEIHT Le Systme de Management de la qualit (ISO 9001)

    E-Print Network [OSTI]

    Grigoras, .Romulus

    La Qualité à l'ENSEEIHT Le Système de Management de la qualité (ISO 9001) En 3 mots : le Système de Management de la qualité (ISO 9001) - Le SMQ c'est : * Réaliser = Procédures, réaliser les activités (selon constatés. Les rapports d'audit de certification et internes sont présentés dans la page audits. #12;

  8. LE CADRE DE SANTE ENTRE LOGIQUES D'UTILITE ET LOGIQUES DE SOINS HOSPITALIERS

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    valorisation des cadres hospitaliers avec pour objectif: « Le renforcement du management hospitalier » La1 LE CADRE DE SANTE ENTRE LOGIQUES D'UTILITE ET LOGIQUES DE SOINS HOSPITALIERS Résumé : Le cadre de santé hospitalier réalise, au niveau d'un service, l'ensemble des missions d'organisation de l

  9. Europe, comment a va avec les artistes? Avignon, le 24 juillet 2011

    E-Print Network [OSTI]

    Naud Frédéric

    1. Europe, comment ça va avec les artistes? Avignon, le 24 juillet 2011 #12;Arnaud Laporte. Bonjour artistes. Le titre générique de ces Rencontres, « Europe, le regard des artistes », énonce cette idée que « Europe, comment ça va avec les artistes ? » (en écho au beau film de Raymond Depardon, Afrique, comment

  10. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  11. Approved Module Information for LE3028, 2014/5 Module Title/Name: Corpus Linguistics Module Code: LE3028

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    from primary sources (i.e. corpora) and secondary sources (e.g. dictionaries) Carrying outApproved Module Information for LE3028, 2014/5 Module Title/Name: Corpus Linguistics Module Code Module Credits: 20 Module Management Information Module Leader Name Garry Plappert Email Address g

  12. Cs6Ge8Zn: A Zintl Phase with Isolated Heteroatomic Clusters of Ge8Zn

    E-Print Network [OSTI]

    a single phase of Cs6Ge8Zn.8 The plate-like crystals of the compound are brittle, black, and with coal-like luster. Single-crystal studies unveiled a new type of cluster formation, a dimer of corner different types. The clusters of type A have only a horizontal mirror plane (Cm) while the clusters of type

  13. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  14. Pseudorapidity Distribution of Charged Particles in d + Au Collisions at $\\sqrt{s_{_{NN}}$ = 200 GeV

    E-Print Network [OSTI]

    B. B. Back

    2003-11-10

    The measured pseudorapidity distribution of primary charged particles in minimum-bias d + Au collisions at ${\\sqrt{s_{_{NN}}} = \\rm {200 GeV}}$ is presented for the first time. This distribution falls off less rapidly in the gold direction as compared to the deuteron direction. The average value of the charged particle pseudorapidity density at midrapidity is ${\\rm _{\\mid \\eta \\mid \\le 0.6} = 9.4 \\pm 0.7(syst)}$ and the integrated primary charged particle multiplicity in the measured region is 82 $\\pm$ 6(syst). Estimates of the total charged particle production, based on extrapolations outside the measured pseudorapidity region, are also presented. The pseudorapidity distribution, normalized to the number of participants in d + Au collisions, is compared to those of Au + Au and ${\\rm p}+\\bar{\\rm p}$ systems at the same energy. The d + Au distribution is also compared to the predictions of the parton saturation model, as well as microscopic models.

  15. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  16. The Proposed Majorana 76Ge Double-Beta Decay Experiment

    SciTech Connect (OSTI)

    Aalseth, Craig E.; Anderson, Dale N.; Arthur, Richard J.; Avignone, Frank T.; Baktash, Cryus; Ball, Thedore; Barabash, Alexander S.; Bertrand, F.; Brodzinski, Ronald L.; Brudanin, V.; Bugg, William; Champagne, A. E.; Chan, Yuen-Dat; Cianciolo, Thomas V.; Collar, J. I.; Creswick, R. W.; Descovich, M.; Di Marco, Marie; Doe, P. J.; Dunham, Glen C.; Efremenko, Yuri; Egerov, V.; Ejiri, H.; Elliott, Steven R.; Emanuel, A.; Fallon, Paul; Farach, H. A.; Gaitskell, R. J.; Gehman, Victor; Grzywacz, Robert; Hallin, A.; Hazma, R.; Henning, R.; Hime, Andrew; Hossbach, Todd W.; Jordan, David V.; Kazkaz, K.; Kephart, Jeremy; King, G. S.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Lesko, Kevin; Luke, P.; Luzum, M.; Macchiavelli, A. O.; McDonald, A.; Mei, Dongming; Miley, Harry S.; Mills, G. B.; Mokhtarani, A.; Nomachi, Masaharu; Orrell, John L.; Palms, John M.; Poon, Alan; Radford, D. C.; Reeves, James H.; Robertson, R. G. H.; Runkle, Robert C.; Rykaczewski, Krzysztof P.; Saburov, Konstantin; Sandukovsky, Viatcheslav; Sonnenschein, Andrew; Tornow, W.; Tull, C.; van de Water, R. G.; Vanushin, Igor; Vetter, Kai; Warner, Ray A.; Wilkerson, John F.; Wouters, Jan M.; Young , A. R.; Yumatov, V.

    2005-01-01

    The proposed Majorana experiment is based on an array of segmented intrinsic Ge detectors with a total mass of 500 kg of Ge isotopically enriched to 86% in 76Ge. Background reduction will be accomplished by: material selection, detector segmentation, pulse shape analysis, electro-formation of copper parts, and granularity of detector spacing. The predicted experimental sensitivity for measurement of the neutrinoless double-beta decay mode of 76Ge, over a data acquisition period of 5000 kg•y, is ~ 4?1027 y.

  17. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    investment in Oklahoma reflects GE's commitment to skills development for the future. "Growth and development go hand-in-hand with educational excellence, strength in science,...

  18. CMC technology revolutionary for aviation, power | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Novel CMC technology revolutionizes aircraft engines, turbines CMCs - Ceramic Matrix Composites - are a revolutionary material invented by GE scientists that offer...

  19. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  20. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window)...

  1. RADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

    E-Print Network [OSTI]

    Pehl, Richard H.

    2011-01-01

    Parker, "Radiation Damage of Germanium Detectors", Bull. Am.to radiation damage between the two detectors was clearlyRADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

  2. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to our local markets and innovating technologies to meet the most urgent needs of Chinese society. Additionally, GE teams up with local customers to jointly develop innovative...

  3. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  4. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  5. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  6. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  7. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  8. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  9. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  10. La programmation orientee objets et le langage Java

    E-Print Network [OSTI]

    Tichit, Laurent

    La programmation orient´ee objets et le langage Java Master Pro BBSG 2 Henri Garreta, Laurent Tichit D´epartement d'Informatique, Facult´e des Sciences de Luminy Cours 1: Java "sans les objets" c H. Garreta et L. Tichit, 2011-2012 POO et Java 1 / 32 #12;Java "sans les objets" Ressources Documentation www.dil.univ-mrs.fr/~tichit/java

  11. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  12. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  13. Nucleon Resonances Near 2 GeV

    E-Print Network [OSTI]

    He, Jun

    2015-01-01

    The nucleon resonances near 2 GeV are investigated through the $\\Sigma$(1385) and $\\Lambda(1520)$ photoproductions within a Regge-plus-resonance approach based on the new experimental data released by the CLAS Collaboration. The $\\Delta(2000)$ and the $N(2120)$ are found essential to reproduce the experimental data and should be assigned as second $[\\Delta 5/2^+]$ and third $[N3/2^-]$ in the constituent quark model, respectively. A calculation of the binding energy and decay pattern supports that the $N(1875)$, which is listed in the PDG as the third $N3/2^-$ nucleon resonance instead of the $N(2120)$, is from the $\\Sigma(1385)K$ interaction rather than a three quark state.

  14. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  15. La dynamique de communication entre Hydro-Qubec et les Innus dans le cadre du projet de la Romaine

    E-Print Network [OSTI]

    La dynamique de communication entre Hydro-Québec et les Innus dans le cadre du projet de la Romaine Fortin, 2014 #12;#12;iii Résumé Le mémoire porte sur la dynamique de communication entre Hydro-Québec et, composées dInnus et de représentants dHydro-Québec, et dont le rôle est de gérer les fonds. De plus, le

  16. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  17. Ge#ng Started on HokieSpeed

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Ge#ng Started on HokieSpeed Advanced Research Computing #12;Advanced Research Compu:ng;Advanced Research Compu:ng Important Login Informa:on · Account sheets provide login Compu:ng Ge#ng Started Steps 1. Sheet distributed provides your training account

  18. Axion Detection with Germanium Detectors Hannah LeTourneau

    E-Print Network [OSTI]

    Washington at Seattle, University of - Department of Physics, Electroweak Interaction Research Group

    of germanium detectors which will be used primarily to search for neutrinoless double beta decay, which would matter, and dark energy.[2] Neutrinoless double beta decay (0) is an energet- ically possible decay method for determining the crystal axis orientation of Ge detectors. I. BACKGROUND A. Neutrinoless Double

  19. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  20. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J June 2013) The thermoelectric and physical properties of superlattices consisting of modulation doped

  1. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  2. Les NEP ont-elles rduit le risque d'audit ? 1 Les NEP ont-elles rduit le risque d'audit ?

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Les NEP ont-elles réduit le risque d'audit ? 1 Les NEP ont-elles réduit le risque d'audit ? Alain changements importants, à commencer par l'apparition de normes d'exercice professionnel (NEP) homologuées par sociétés à responsabilité limitée 2 NEP 9605 du 20 avril 2010 3 Article L. 225-235 du code de commerce 4

  3. Approved Module Information for LE1088, 2014/5 Module Title/Name: Theories of Language and Identities Module Code: LE1088

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE1088, 2014/5 Module Title/Name: Theories of Language and Identities Module Code: LE1088 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 10 Module Management Information Module Leader Name Urszula Clark Email Address u

  4. Rserve Internationale de Ciel Etoile au Pic de Midi de Le pic du Midi de Bigorre est situ est situ dans les Pyrnes franaises, dans le

    E-Print Network [OSTI]

    Dintrans, Boris

    Titre Réserve Internationale de Ciel Etoilée au Pic de Midi de Bigorre Résumé Le pic du Midi de en avant de la chaîne, le pic est connu pour son panorama magnifique sur la chaîne de montagnes étoilé au pic du Midi de Bigorre. Pourquoi une Réserve de Ciel Etoilé au Pic du Midi ? Ce site

  5. Gomatique --13/2003. Les SIG sur le web, pages 339 359 Cartographie sur demande sur le web et bases de donnes

    E-Print Network [OSTI]

    Géomatique -- 13/2003. Les SIG sur le web, pages 339 à 359 Cartographie sur demande sur le web et.bernier;yvan.bedard;melanie.lambert}@.scg.ulaval.ca RÉSUMÉ. Depuis quelques années, plusieurs applications web permettent aux internautes d'accéder à de l witnessed the emerging of web mapping applications. These applications allow a user to have access

  6. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  7. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  8. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  9. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  10. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  11. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  12. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  13. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  14. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  15. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  16. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  17. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  18. Le Flore County, Oklahoma: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma, Arizona: Energy ResourcesProjectMississippi: EnergyLawrie v. Silsby,LazyLe

  19. Archea ME LE Anlagenbau GmbH | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LISTStar Energy LLC Jump to: navigation,Summaries | OpenLibraryAquafuelAralcoME LE

  20. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio deCooperation atThe GE

  1. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  2. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  3. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  4. de l'UNIGEle journalDu 25 octobre au 8 novembre 2012 | Parat le jeudi | www.unige.ch/lejournal vu d'ici | 4

    E-Print Network [OSTI]

    Halazonetis, Thanos

    Festival Global+5, le 9octobre dernier, le projet «Planet Solar Deepwater» pré- voit quant à lui de mener une série d'expériences inédites le long du Gulf Stream avec le bateau Planet Solar. point fort | 2 de la Faculté de droit. Planet Solar dans le Pacifique Photo: P. Lesage #12;| 2 | 25 octobre-8

  5. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  6. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  7. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  8. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  9. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  10. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  11. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  12. ORNL Partners with GE on New Hybrid | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save...

  13. Kids Invention: Vision of the Future |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Bring your Child to Work Day, to student mentoring, teaching in the class room, Invention Convention and Science Day. To take the message nationally, GE teamed up with the...

  14. The Need for Biological Computation System Models | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2012.10.09 Hello everyone, I'm Maria Zavodszky and I work in the Computational Biology and Biostatistics Lab at GE Global Research in Niskayuna, New York. This being our...

  15. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics

  16. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  17. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  18. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  19. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  20. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  1. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  2. GE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program

    E-Print Network [OSTI]

    history of working with the DOE on critical energy programs. Jon Ebacher, Vice President of GE PowerGE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program Technology Expected of Energy (DOE) recently met with representatives of GE Power Systems and the GE Global Research Center

  3. Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects

    E-Print Network [OSTI]

    Chen, Haydn H.

    Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects X. L. Wua. A new orange-green PL band, centered at 2.25 eV, was observed with full-width at half-maximum of 0.1 e coated, the new PL band remains unchanged in peak energy but drops abruptly in intensity. Spectral

  4. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  5. Animation de mod`eles UML -Application dans le contexte des Smartgrids

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Animation de mod`eles UML - Application dans le contexte des Smartgrids Rachida Seghiri T'arriv´ee des Smartgrids dans le domaine ´electrique apporte de profonds changements au sein des Syst`emes d, nous ´etayons cet ´etat de l'art par la simulation d'un cas m´etier illustratif des Smartgrids en

  6. Le luri : quelques notes sur une langue tchadique du Nigeria Bernard CARON

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Le luri : quelques notes sur une langue tchadique du Nigeria Bernard CARON LLACAN (CNRS, INALCO arbres magnifiques de la savane du nord du Nigeria où ruissellent les cours d'eau dans la tendre d'une langue tchadique non citée dans (Shimizu, 1978), le luri : « LURI : a language of Nigeria SIL

  7. Algorithme exact pour le probl`eme de l'independant faiblement connexe de

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Fatiha BENDALI, Jean MAILFERT, Djelloul MAMERI LIMOS UMR CNRS 6158, Campus Scientifique des C´electionner le plus petit nombre Travail partiellement financ´e par le projet TODO ANR 09-EMER-010. bendali,mailfert,mameri BENDALI, Jean MAILFERT, Djelloul MAMERI de tels sommets. Cependant d´eterminer un dominant connexe ou

  8. DEMANDE DE CONGE Cette demande doit tre effectue un mois avant le dbut du semestre.

    E-Print Network [OSTI]

    Halazonetis, Thanos

    DEMANDE DE CONGE Cette demande doit être effectuée un mois avant le début du semestre. Date de la demande .......................................................... NOM-mail .......................................................................................................................................................................... @etu.unige.ch Demande à être mis au bénéfice d'un congé pour le(s) semestre(s) suivant(s) (2 semestres

  9. A S T R O F I S I C A Le Stelle n. 5360

    E-Print Network [OSTI]

    Savin, Daniel Wolf

    ghiaccio emettono raggi X di alta energia? Le risposte a queste domande sono racchiuse negli spettri della'Universo al di là del Sistema Solare. Le leggi della fisica ci dicono che ogni atomo, o molecola, emette o come un prisma disperde la luce solare in un arcobaleno di Fare astrofisica in laboratorioNon tutti gli

  10. Communiqu de presse Paris, le 14 novembre 2013 Parrainez un animal du

    E-Print Network [OSTI]

    79 54 42 / munier@mnhn.fr Pierre Laporte Communication : Marie Roy : 01 45 23 14 14 / marie'Ouest, Girafa camelopardalis antiquorum Née le 13 juin 1996 (17 ans) au zoo. Elle sera présentée dans la biozone Sahel-Soudan. Nom : Aramis Jaguar, panthera onca Né le 11 décembre 2009 (4 ans) à Varsovie en Pologne

  11. Universit du Maine, Le Mans, France cole Doctorale Sciences Pour l'Ingnieur, Gosciences, Architecture

    E-Print Network [OSTI]

    Boyer, Edmond

    to monitoring the sodium! cooled fast reactors (SFR) and consists in positioning in the reactor core rapides refroidis par du sodium liquide (RNR!Na). De manière générale, la télémétrie consiste à travers un milieu inhomogène et aléatoire car le sodium liquide est le siège de fluctuations de

  12. The PortevinLe Chatelier (PLC) effect and shear band formation in an AA5754 alloy

    E-Print Network [OSTI]

    Niewczas, Marek

    The Portevin­Le Chatelier (PLC) effect and shear band formation in an AA5754 alloy Herdawandi Halim in order to observe Portevin­Le Chatelier (PLC) band behaviour during tensile deformation of AA5754 sheet and subsequently to measure the level of incre- mental plastic strain carried within the bands. In addition, PLC

  13. Facult des sciences infirmires Le Baccalaurat en sciences infirmires est offert selon divers par-

    E-Print Network [OSTI]

    Montréal, Université de

    titulaires d'un DEC en soins infirmiers, première composante du DEC- Baccalauréat intégré et à l'intention des infirmières et infirmiers en exercice. Le programme est offert selon deux modalités : temps plein destiné aux infirmières et infirmiers en exercice. Le parcours est constitué de trois étapes, les Mineures

  14. La coordination dans le champ sanitaire et mdico-social Enjeux organisationnels et dynamiques professionnelles

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , management d'équipe, et animation de réseau, p.117 C. Coordonner le parcours des personnes : gestionnaire de : Centre hospitalier universitaire CLIC : Centres locaux d'information et de coordination à caractère, qui sont confrontés à une fragmentation de l'offre (entre le secteur hospitalier, la médecine de ville

  15. Quelles collaborations pour contribuer dvelopper des thrapies innovantes contre le cancer ?

    E-Print Network [OSTI]

    Bordenave, Charles

    cancer ? » 11 mai 2015 - 14h-17h - Amphi II Maison de la Recherche et de la Valorisation 14h00, chimie, physique, ingénierie pour contribuer à améliorer le traitement du cancer. Pierre Brousset, ingénierie pour contribuer à améliorer le traitement du cancer. Jean-Jacques Fournier ­ Centre de Recherche

  16. Propagation de Contraintes et Listes Tabou pour le CSP Mohammad DIB, Alexandre CAMINADA, Hakim MABED

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Propagation de Contraintes et Listes Tabou pour le CSP Mohammad DIB, Alexandre CAMINADA, Hakim pour le CSP. Nous proposons une méthode déterministe qui permet de gérer dynamiquement des coupes dans percentages. 1 INTRODUCTION Un problème de satisfaction de contraintes (CSP) [1] est défini par un ensemble de

  17. nationaL d'Histoire natureLLe Chercheurs, enseignants, musologues... tous partagent le mme but : mieux connatre la

    E-Print Network [OSTI]

    , muséologues... tous partagent le même but : mieux connaître la nature afin de mieux la préserver. Un credo que

  18. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  19. Le polyimide-alumine : un isolant performant utilis dans un aimant supraconducteur refroidi l'hlium superfluide

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1761 Le polyimide-alumine : un isolant performant utilisé dans un aimant supraconducteur refroidi à'est avéré nécessaire de développer un matériau nouveau : le polyimide-alumine. Le programme de développement to develop a new material : polyimide-alumina. The development program resulted in the achievement

  20. YAHOO!, INC., a Delaware corporation, Plaintiff, LA LIGUE CONTRE LE RACISME ET L'ANTISEMITISME, a French association, et al.,

    E-Print Network [OSTI]

    Shamos, Michael I.

    YAHOO!, INC., a Delaware corporation, Plaintiff, v. LA LIGUE CONTRE LE RACISME ET L Defendants La Ligue Contre Le Racisme Et l'Antisemitisme ("LICRA") and L'Union Des Etudiants Juifs De France each. Join now. Tell me when this page is updated Page 1 of 10Yahoo v. La Ligue Contre Le Racisme et L

  1. ACCUEIL > NUMRIQUE & INFORMATIQUE Le professeur Andrew Ellis pense que les tuyaux d'Internet seront bientt victimes

    E-Print Network [OSTI]

    Lefèvre, Laurent

    'Internet seront bientôt victimes d'embouteillages XXL provocant un blackout total. © DR SUR LE MÊME SUJET Internet Nouvelle France industrielle : le numérique est partout ! Un blackout d'Internet en 2023 ? 5 raisons de ne'Internet seront bientôt victimes d'embouteillages XXL provocant un blackout total. Le professeur Andrew Ellis

  2. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  3. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  4. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ÀyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  5. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  6. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  7. Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

    E-Print Network [OSTI]

    Fei, Ruixiang; Li, Ju; Yang, Li

    2015-01-01

    We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" D2h symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  8. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  9. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  10. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  11. Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1

    E-Print Network [OSTI]

    Li, Tim

    Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1 Tim Li,1,2 and Xiaqiong Zhou1] Tropical cyclone Rossby wave energy dispersion under easterly and westerly vertical shears is investigated, and X. Zhou (2007), Tropical cyclone energy dispersion under vertical shears, Geophys. Res. Lett., 34, L

  12. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  13. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  14. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  15. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  16. Un robot voiles pour des missions scientifiques Brest, le projet s'appelle Vaimos, pour Voilier Brest, le projet s'appelle Vaimos, pour Voilier Brest, le projet s'appelle Vaimos, pour Voilier Brest, le projet s'appelle Vaimos, pour Voilier

    E-Print Network [OSTI]

    Lherminier, Pascale

    Un robot à voiles pour des missions scientifiques À Brest, le projet s'appelle Vaimos, pour Voilier.océanographiques de surface.océanographiques de surface.océanographiques de surface. Ce robot voilier va réaliser

  17. BAND AID, le film Les inondations les plus catastrophiques au Bangladesh sont lies une conjonction de

    E-Print Network [OSTI]

    BAND AID, le film Les inondations les plus catastrophiques au Bangladesh sont liées à une- Bramapoutre-Meghna au Bangladesh et à l'adaptation des populations au changement climatique. Ce projet

  18. LIEU COMMUN ET CREATION POETIQUE NEOCLASSIQUE : LE CAS DE TOMAS DE IRIARTE (1750-1791)

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 LIEU COMMUN ET CREATION POETIQUE NEOCLASSIQUE : LE CAS DE TOMAS DE IRIARTE (1750-1791) Marc MARTI. 222 : « ¿ Qué se entendía por imitación a principios del siglo XVIII ? siguiendo la corriente clásica

  19. Introduction au HTML Comment le HTML est-il n ? En fait, tout commence quand TIM BERNERS-LEE cre une

    E-Print Network [OSTI]

    Vellend, Mark

    ). Le langage HTML ne se rencontre pas exclusivement sur le web, celui ci est également utilisé pourIntroduction au HTML Naissance Comment le HTML est-il né ? En fait, tout commence quand TIM BERNERS'époque "la mère de tous les réseaux" : Internet. Le World Wide Web (W.W.W.) est constitué de pages Web. Ces

  20. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  1. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  2. 1. Exit at Washington Ave. (Exit 17C) 2. Le at Washington Ave. S.

    E-Print Network [OSTI]

    Thomas, David D.

    From I-35W Southbound 1. Exit at Washington Ave. (Exit 17C) 2. Le at Washington Ave. S. 3. Con nue Straight as Washington Ave S becomes Cedar Ave 5. Le on 3rd St S. 6. For 19th Ave Ramp, turn right 17C) 2. Stay in the middle lane and follow the signs for Washington Ave./U of M/West Bank. 3

  3. 1. Exit at Washington Ave. (Exit 17C) 2. Le at Washington Ave. S.

    E-Print Network [OSTI]

    Thomas, David D.

    From I-35W Southbound 1. Exit at Washington Ave. (Exit 17C) 2. Le at Washington Ave. S. 3. Con nue Straight as Washington Ave S becomes Cedar Ave 5. Le on 3rd St S. 6. Con nue to 19th Ave S. Turn right. Con the signs for Washington Ave./U of M/West Bank. 3. Then move to the right lane and take the exit for U of M

  4. 1. Exit at Washington Ave. (Exit 17C) 2. Le at Washington Ave. S.

    E-Print Network [OSTI]

    Thomas, David D.

    From I-35W Southbound 1. Exit at Washington Ave. (Exit 17C) 2. Le at Washington Ave. S. 3. Le at the 2nd signal to con nue on Washington Ave S. 4. Con nue through the signal at 19th Ave. On to 2nd St./U of M (Exit 17C) 2. Stay in the middle lane and follow the signs for Washington Ave./U of M/West Bank. 3

  5. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  6. GeV electron beams from cm-scale channel guided laser wakefield accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  7. GeV electron beams from a centimeter-scale laser-driven plasma accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  8. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  9. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we have written of progress with the CEBAF 12 GeV Upgrade Project. Since the beginning of...

  10. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  11. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  12. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process

    E-Print Network [OSTI]

    Lin, Hsin-Chang

    2015-01-01

    1.3 Millimeter-Wave Signal Generation 1.4 ThesisPower Millimeter-Wave Signal Generation in Advanced SiGe andPower Millimeter-Wave Signal Generation in Advanced SiGe and

  13. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  14. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  15. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV...

  16. GE to Invest in Penn State Center to Study Natural Gas Supply...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    window) GE to Invest in Penn State Center to Study Natural Gas Supply Chains University Park, Pa. - GE announced it will invest up to 10 million in Penn State to establish a new...

  17. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  18. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Risø-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30° unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  19. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.dopants of interest for spintronic applications, where both

  20. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  1. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  2. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,§,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  3. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  4. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 · 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  5. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, “Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, “Ge on Si p-i-n photodiodes operating

  6. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  7. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  8. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  9. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  10. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  11. Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Infrared and photoluminescence spectroscopy of p-doped self-assembled Ge dots on Si L. P and photoluminescence PL spectroscopy of self-assembled Ge dots grown on Si 100 by molecular beam epitaxy. PL spectra show a transition from two- to three-dimensional growth as the Ge thickness exceeds 7 Å. The sum

  12. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  13. Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a

    E-Print Network [OSTI]

    Kim, Sehun

    Atomic and electronic structure of styrene on Ge(100) Do Hwan Kim a , Yun Jeong Hwang b , Junga: Styrene Ge(100) Adsorption DFT calculations STM Coverage-dependent adsorption structures of styrene favorable configuration at room temperature is that the two styrene molecules are bound to two Ge dimers

  14. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmore »gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.« less

  15. GRB 131231A: IMPLICATIONS OF THE GeV EMISSION

    SciTech Connect (OSTI)

    Liu, Bin; Chen, Wei; Liang, Yun-Feng; Zhou, Bei; He, Hao-Ning; Jin, Zhi-Ping; Fan, Yi-Zhong; Wei, Da-Ming [Key laboratory of Dark Matter and Space Astronomy, Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210008 (China); Tam, Pak-Hin Thomas [Institute of Astronomy and Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Shao, Lang, E-mail: liangyf@pmo.ac.cn, E-mail: beizhou@pmo.ac.cn, E-mail: yzfan@pmo.ac.cn, E-mail: dmwei@pmo.ac.cn, E-mail: phtam@phys.nthu.edu.tw [Department of Physics, Hebei Normal University, Shijiazhuang 050024 (China)

    2014-05-20

    GRB 131231A was detected by the Large Area Telescope on board the Fermi Space Gamma-ray Telescope. The high-energy gamma-ray (>100 MeV) afterglow emission spectrum is F {sub ?}??{sup –0.54} {sup ±} {sup 0.15} in the first ?1300 s after the trigger and the most energetic photon has an energy of ?62 GeV, arriving at t ? 520 s. With reasonable parameters of the gamma-ray burst (GRB) outflow as well as the density of the circum-burst medium, the synchrotron radiation of electrons or protons accelerated at an external forward shock have difficulty accounting for the data. Rather, the synchrotron self-Compton radiation of the forward shock-accelerated electrons can account for both the spectrum and temporal behavior of the GeV afterglow emission. We also show that the prospect for detecting GRB 131231A-like GRBs with the Cherenkov Telescope Array is promising.

  16. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  17. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  18. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  19. La rflexion sur le projet quinquennal, la rdaction du document AERES et la visite du comit sont maintenant loin derrire nous... A tel point que nous pouvons avoir le sentiment d'tre

    E-Print Network [OSTI]

    Cattin, Rodolphe

    édito La réflexion sur le projet quinquennal, la rédaction du document AERES et la visite du comité

  20. Mme sans dossier AERES, le mois de septembre est toujours aussi anim. Celui-ci n'aura pas drog la rgle, avec en plus le poids des restrictions budgtaires qui pse sur les emplois

    E-Print Network [OSTI]

    Cattin, Rodolphe

    édito Même sans dossier AERES, le mois de septembre est toujours aussi animé. Celui-ci n'aura pas

  1. Gamma-Ray Bursts Above 1 GeV

    E-Print Network [OSTI]

    Matthew G. Baring

    1997-11-21

    One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

  2. Quantum confinement in Si and Ge nanostructures: Theory and experiment

    SciTech Connect (OSTI)

    Barbagiovanni, Eric G.; Lockwood, David J.; Simpson, Peter J.; Goncharova, Lyudmila V.

    2014-03-15

    The role of quantum confinement (QC) in Si and Ge nanostructures (NSs) including quantum dots, quantum wires, and quantum wells is assessed under a wide variety of fabrication methods in terms of both their structural and optical properties. Structural properties include interface states, defect states in a matrix material, and stress, all of which alter the electronic states and hence the measured optical properties. We demonstrate how variations in the fabrication method lead to differences in the NS properties, where the most relevant parameters for each type of fabrication method are highlighted. Si embedded in, or layered between, SiO{sub 2}, and the role of the sub-oxide interface states embodies much of the discussion. Other matrix materials include Si{sub 3}N{sub 4} and Al{sub 2}O{sub 3}. Si NSs exhibit a complicated optical spectrum, because the coupling between the interface states and the confined carriers manifests with varying magnitude depending on the dimension of confinement. Ge NSs do not produce well-defined luminescence due to confined carriers, because of the strong influence from oxygen vacancy defect states. Variations in Si and Ge NS properties are considered in terms of different theoretical models of QC (effective mass approximation, tight binding method, and pseudopotential method). For each theoretical model, we discuss the treatment of the relevant experimental parameters.

  3. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  4. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey

    2015-01-01

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  5. CAHIER DE RECHERCHE : 2008-05 E1 En France, le concours d'accs aux tudes en soins

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 CAHIER DE RECHERCHE : 2008-05 E1 En France, le concours d'accès aux études en soins infirmiers de-11Feb2010 #12;2 En France, le concours d'accès aux études en soins infirmiers de 1992 répond-il aux concours d'accès aux études en soins infirmiers défini en 1992, représente le "sas d'entrée en formation

  6. XiAn Lv Jing Technology | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page| Open Energy Information Serbia-EnhancingEtGeorgia:Illinois:Wizard PowerWyandanch, New1991) | OpenTech GroupXergiXiAn

  7. Hyperinsulinemia improves ischemic LV function in insulin resistant subjects

    E-Print Network [OSTI]

    Heck, Patrick M.; Hoole, Stephen P.; Khan, Sadia N.; Dutka, David P.

    2010-06-24

    of dobu- tamine stress. The filter was set to exclude high frequency signal, and the Nyquist limit was set to 24 cm/s to mini- mize aliasing during stress. The sector angle and imaging depth were minimized to maintain adequate frame rates of at least 140...

  8. 13418/09 EV/lv 1 THE EUROPEAN UNION

    E-Print Network [OSTI]

    of the ITER machine will be assembled and tested together before the progressive installation of in-vessel working together to develop a realistic schedule with well founded estimates of the resources needed

  9. Microsoft Word - Report Cover A08LV023.doc

    Broader source: Energy.gov (indexed) [DOE]

    Report on the Audit of National Security Technologies, LLC Costs Claimed under Department of Energy Contract No. DE-AC52-06NA25946 for Fiscal Year 2007 OAS-FC-09-01 May 2009...

  10. MHK Projects/Norde lv | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View NewTexas:Montezuma,Information MHKMHK5 < MHK ProjectsHawaii <|

  11. L'Universit Yale L'Universit Yale se trouve dans le centre historique de New Haven, ville portu-

    E-Print Network [OSTI]

    'Environnement en 1900, l'Ecole d'Infirmiers en 1923, le Conservatoire de Théâtre en 1955, l'Ecole d'Architecture en

  12. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained SiÕstrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  13. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  14. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  15. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge and computer memory, but the structure of the amorphous phases and the nature of the phase transition of types A Ge and Sb and B Te , an "ABAB square." The rapid amorphous-to-crystalline phase change

  16. Large-angle production of charged pions by 3 GeV/c - 12.9 GeV/c protons on beryllium, aluminium and lead targets

    E-Print Network [OSTI]

    HARP Collaboration

    2007-09-21

    Measurements of the double-differential $\\pi^{\\pm}$ production cross-section in the range of momentum $100 \\MeVc \\leq p beryllium, proton--aluminium and proton--lead collisions are presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12.9 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was performed using a small-radius cylindrical time projection chamber (TPC) placed inside a solenoidal magnet. Incident particles were identified by an elaborate system of beam detectors. Results are obtained for the double-differential cross-sections at six incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc, 8.9 \\GeVc (Be only), 12 \\GeVc and 12.9 \\GeVc (Al only)) and compared to previously available data.

  17. GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension ­ General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  18. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.50–1.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  19. GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension ­ General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  20. GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English English student, and I would like to switch to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours

  1. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  2. LiMn{sub 2-x}Cu{sub x}O{sub 4} spinels (0.1 {le} x {le} 0.5) - a new class of 5 V cathode materials for Li batteries : I. electrochemical, structural and spectroscopic studies.

    SciTech Connect (OSTI)

    Ein-Eli, Y.

    1998-10-05

    A series of electroactive spinel compounds, LiMn{sub 2{minus}x}Cu{sub x}O{sub 4} (0.1 {le} x {le} 0.5) has been studied by crystallographic, spectroscopic and electrochemical methods and by electron-microscopy. These LiMn{sub 2{minus}x}Cu{sub x}O{sub 4} spinels are nearly identical in structure to cubic LiMn{sub 2}O{sub 4} and successfully undergo reversible Li intercalation. The electrochemical data show a remarkable reversible electrochemical process at 4.9 V which is attributed to the oxidation of Cu{sup 2+} to Cu{sub 3+}. The inclusion of Cu in the spinel structure enhances the electrochemical stability of these materials upon cycling. The initial capacity of LiMn{sub 2{minus}x}Cu{sub x}O{sub 4} spinels decreases with increasing x from 130mAh/g in LiMn{sub 2}O{sub 4} (x=0) to 70 mAh/g in ''LiMn{sub 1.5}Cu{sub 0.5}O{sub 4}'' (x=0.5). The data also show slight shifts to higher voltage for the delithiation reaction that normally occurs at 4.1 V in standard Li{sub 1{minus}x}Mn{sub 2}O{sub 4} electrodes (1 {ge} x {ge} 0) corresponding to the oxidation of Mn{sup 3+} to Mn{sup 4+}. Although the powder X-ray diffraction pattern of ''LiMn{sub 1.5}Cu{sub 0.5}O{sub 4}'' shows a single-phase spinel product, neutron diffraction data show a small, but significant quantity of an impurity phase, the composition and structure of which could not be identified. X-ray absorption spectroscopy was used to gather information about the oxidation states of the manganese and copper ions. The composition of the spinel component in the LiMn{sub 1.5}Cu{sub 0.5}O{sub 4} was determined from X-ray diffraction and XANES data to be Li{sub 1.01}Mn{sub 1.67}Cu{sub 0.32}O{sub 4} suggesting, to a best approximation, that the impurity in the sample was a lithium-copper-oxide phase. The substitution of manganese by copper enhances the reactivity of the spinel structure towards hydrogen; the compounds are more easily reduced at moderate temperature ({approximately} 200 C) than LiMn{sub 2}O{sub 4}.

  3. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing; Chumbley, Leonard S.

    2013-05-16

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  4. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo; Lei, Xiao-Wu

    2013-10-15

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) Å, b=12.475(5) Å, c=17.077(7) Å, V=1941.5(15) Å{sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UV–vis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: • One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. • The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. • The first example of inorganic–organic hybrid thiogermanates with mixed valent Ge centers.

  5. Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

    SciTech Connect (OSTI)

    Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-12-16

    In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

  6. GE & AE Program Change Form, Version 9, May 2012, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Form, Version 9, May 2012, JC Program Change ­ General English or Academic to GE. How many more sessions of GE do you wish to request? 1 2 3 4 5 6 How many GE hours do you wish to take? 21 hours 27 hours 2) ____ I am a GE student, and I would like to switch to AE. How many more

  7. Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment

    SciTech Connect (OSTI)

    Kasahara, K.; Yamada, S.; Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sakurai, T.; Sawano, K.; Nohira, H. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan); Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan)

    2014-04-28

    This study demonstrates that by using a sulfur (S) treatment on the Ge surface, a reduction in Fermi level pinning can reproducibly be achieved at atomically matched metal/Ge(111) interfaces. The Schottky barrier height for p-type Ge can be controlled by changing the metal work function despite the metal/Ge junctions. The results indicate that the combination of atomic-arrangement matching and S treatment can remove extrinsic factors influencing Fermi level pinning at metal/Ge interfaces.

  8. Diamond turning of Si and Ge single crystals

    SciTech Connect (OSTI)

    Blake, P.; Scattergood, R.O.

    1988-12-01

    Single-point diamond turning studies have been completed on Si and Ge crystals. A new process model was developed for diamond turning which is based on a critical depth of cut for plastic flow-to-brittle fracture transitions. This concept, when combined with the actual machining geometry for single-point turning, predicts that {open_quotes}ductile{close_quotes} machining is a combined action of plasticity and fracture. Interrupted cutting experiments also provide a meant to directly measure the critical depth parameter for given machining conditions.

  9. Extended Battery Life in Electric Vehicles | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFES OctoberEvan Racah Evan-5 BeamlineGE, Ford, University of

  10. Miniaturized Turbine Offers Desalination Solution | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you notHeatMaRIEdioxide capture |GE Puts Desalination "on Ice"

  11. Crystal Lake - GE Energy Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX ECoopButtePower VenturesInformation9) Wind Farm Jump to: navigation, search NameGE

  12. Northern Colorado Wind Energy Center (GE) | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd| OpenInformationConsortium NAVC JumpGE) Jump to:

  13. Notrees 1B (GE Energy) Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIXsourceII Jump to:Information 3rd|Northfork Electric Coop, IncUSA(TXR150000) |B (GE

  14. Gambit Satellite Work Declassified After 25 Years | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »Gambit

  15. Microgravity and Vision in Astronauts | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass map shines light on dark matterEnergyPublicatonsSubstancesproteinGE Researchers Study

  16. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600?°C for 30, 60, and 90?s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27?nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  17. Approved Module Information for LE2012, 2014/5 Module Title/Name: Teaching English to Speakers of Other

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    Approved Module Information for LE2012, 2014/5 Module Title/Name: Teaching English to Speakers of Other Languages Module Code: LE2012 School: Languages and Social Sciences Module Type: Standard Module New Module? Not Specified Module Credits: 10 Module Management Information Module Leader Name Sue

  18. M. ,PELLET. -CON'l'RIBUTION 13 et elle sera ralise en Allemagne cette anne. Le flacon normal, dans

    E-Print Network [OSTI]

    Boyer, Edmond

    M. ,PELLET. - CON'l'RIBUTION 13 et elle sera réalisée en Allemagne cette année. Le flacon normal. CONTRIBUTION A L'ÉTUDE DU LAIT STÉRILISÉ par M. PELLET, Ingénieur agronome. La stérilisation du lait a été j- vations à la Laiterie municipale de Nantes . .Simultanément, M. Pellet donna-t dans le « Lait» (Septembre

  19. Comparative analysis of hole transport in compressively strained InSb and Ge quantum well heterostructures

    SciTech Connect (OSTI)

    Agrawal, Ashish; Barth, Michael; Madan, Himanshu; Datta, Suman [Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Lee, Yi-Jing; Lin, You-Ru; Wu, Cheng-Hsien; Ko, Chih-Hsin; Wann, Clement H. [Taiwan Semiconductor Manufacturing Company, Hsinchu 30078, Taiwan (China); Loubychev, Dmitri; Liu, Amy; Fastenau, Joel [IQE, Inc., Bethlehem, Pennsylvania 18015 (United States); Lindemuth, Jeff [Lake Shore Cryotronics, Westerville, Ohio 43082 (United States)

    2014-08-04

    Compressively strained InSb (s-InSb) and Ge (s-Ge) quantum well heterostructures are experimentally studied, with emphasis on understanding and comparing hole transport in these two-dimensional confined heterostructures. Magnetotransport measurements and bandstructure calculations indicate 2.5× lower effective mass for s-InSb compared to s-Ge quantum well at 1.9?×?10{sup 12}?cm{sup –2}. Advantage of strain-induced m* reduction is negated by higher phonon scattering, degrading hole transport at room temperature in s-InSb quantum well compared to s-Ge heterostructure. Consequently, effective injection velocity is superior in s-Ge compared to s-InSb. These results suggest s-Ge quantum well heterostructure is more favorable and promising p-channel candidate compared to s-InSb for future technology node.

  20. Observation of optical spin injection into Ge-based structures at room temperature

    SciTech Connect (OSTI)

    Yasutake, Yuhsuke; Hayashi, Shuhei; Fukatsu, Susumu; Yaguchi, Hiroyuki

    2013-06-17

    Non-zero spin polarization induced by optical orientation was clearly observed at room temperature in a Ge/Ge{sub 0.8}Si{sub 0.2} quantum well grown on Ge and a Ge layer grown on Si by molecular beam epitaxy, whereas it was absent in bulk Ge. This occurred because indirect-gap photoluminescence (PL), which can obscure the spin-polarization information carried by the direct-gap PL, was quenched by unintentional growth-related defects in the epitaxial layers. Such interpretation was confirmed by applying time gating that effectively removed the indirect-gap PL characterized by a slower rise time, which allowed us to demonstrate the existence of room-temperature spin polarization in bulk Ge.

  1. Irreversible altering of crystalline phase of phase-change Ge-Sb thin films

    SciTech Connect (OSTI)

    Krusin-Elbaum, L.; Shakhvorostov, D.; Cabral, C. Jr.; Raoux, S.; Jordan-Sweet, J. L.

    2010-03-22

    The stability of the crystalline phase of binary phase-change Ge{sub x}Sb{sub 1-x} films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T{sub Ge}{sup p} to the rate of change dT{sub cryst}/dx of crystallization, with the precipitation easiest on the mid-range x plateau, where T{sub cryst} is nearly constant. Our findings point to a preferable 15% < or approx. x < 50% window, that may achieve the desired cycling/archival properties of a phase-change cell.

  2. Tensile-strain and doping enhanced direct bandgap optical transition of n{sup +} doped Ge/GeSi quantum wells

    SciTech Connect (OSTI)

    Fan, W. J.

    2013-11-14

    Band structures of tensile strained and n{sup +} doped Ge/GeSi quantum wells (QWs) are calculated by multiple-band k·p method. The energy dispersion curves of the ? and L conduction subbands are obtained. The effects of tensile strain and n{sup +} doping in Ge on direct bandgap optical gain and spontaneous radiative recombination rate spectra are investigated including the electron leakage from ? to L conduction subbands. Our results show that the optical gain and spontaneous radiative recombination rate can be significantly increased with the tensile strain, n-type doping concentration, and injection carrier density in the Ge QW. The free carrier absorption is calculated and cannot be ignored because of the heavily doped Ge. The pure TM mode polarized net optical gain up to 1153?cm{sup ?1} can be achieved for the Ge/Ge{sub 0.986}Si{sub 0.014} QW with tensile strain of 1.61% and n-type doping concentration of 30?×?10{sup 18}?cm{sup ?3}.

  3. Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I

    E-Print Network [OSTI]

    Results on neutrinoless double beta decay of 76 Ge from Gerda Phase I M. Agostini,14 M. Allardt,3 E and a lower limit is derived for the half-life of neutrinoless double beta decay of 76 Ge, T0 1/2> 2.1 · 1025 double beta decay of the isotope 76 Ge. Data con- sidered in the present analysis have been collected

  4. II. Disparition du plancher ocanique au fur et mesure que les plaques s'enfoncent le long des fosses ocaniques profondes

    E-Print Network [OSTI]

    Miller, Scott

    formation des volcans débute lorsque la dalle froide s'enfonce dans le manteau brûlant, se réchauffe et se résistant. Comme ce matériau en fusion (ou magma) est moins dense que le manteau dur adjacent, il s

  5. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more »the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  6. 12 GeV Upgrade Project - Cryomodule Production

    SciTech Connect (OSTI)

    J. Hogan, A. Burrill, G.K. Davis, M.A. Drury, M. Wiseman

    2012-07-01

    The Thomas Jefferson National Accelerator Facility (Jefferson Lab) is producing ten 100+MV SRF cryomodules (C100) as part of the CEBAF 12 GeV Upgrade Project. Once installed, these cryomodules will become part of an integrated accelerator system upgrade that will result in doubling the energy of the CEBAF machine from 6 to 12 GeV. This paper will present a complete overview of the C100 cryomodule production process. The C100 cryomodule was designed to have the major components procured from private industry and assembled together at Jefferson Lab. In addition to measuring the integrated component performance, the performance of the individual components is verified prior to being released for production and assembly into a cryomodule. Following a comprehensive cold acceptance test of all subsystems, the completed C100 cryomodules are installed and commissioned in the CEBAF machine in preparation of accelerator operations. This overview of the cryomodule production process will include all principal performance measurements, acceptance criterion and up to date status of current activities.

  7. Radiation microscope for SEE testing using GeV ions.

    SciTech Connect (OSTI)

    Doyle, Barney Lee; Knapp, James Arthur; Rossi, Paolo; Hattar, Khalid M.; Vizkelethy, Gyorgy; Brice, David Kenneth; Branson, Janelle V.

    2009-09-01

    Radiation Effects Microscopy is an extremely useful technique in failure analysis of electronic parts used in radiation environment. It also provides much needed support for development of radiation hard components used in spacecraft and nuclear weapons. As the IC manufacturing technology progresses, more and more overlayers are used; therefore, the sensitive region of the part is getting farther and farther from the surface. The thickness of these overlayers is so large today that the traditional microbeams, which are used for REM are unable to reach the sensitive regions. As a result, higher ion beam energies have to be used (> GeV), which are available only at cyclotrons. Since it is extremely complicated to focus these GeV ion beams, a new method has to be developed to perform REM at cyclotrons. We developed a new technique, Ion Photon Emission Microscopy, where instead of focusing the ion beam we use secondary photons emitted from a fluorescence layer on top of the devices being tested to determine the position of the ion hit. By recording this position information in coincidence with an SEE signal we will be able to indentify radiation sensitive regions of modern electronic parts, which will increase the efficiency of radiation hard circuits.

  8. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi [JLAB] (ORCID:0000000170267841)

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  9. Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character

    SciTech Connect (OSTI)

    Siggelkow, Lisa; Hlukhyy, Viktor [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany); Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de [Department Chemie, Technische Universitaet Muenchen, Lichtenbergstr. 4, D-85747 Garching (Germany)

    2012-07-15

    The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64 variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.

  10. Effect of stacking sequence on crystallization in Al/a-Ge bilayer thin films

    SciTech Connect (OSTI)

    Zhang, Tianwei; Zhang, Weilin; Ma, Fei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 (China); Huang, Yuhong [College of Physics and Information Technology, Shaanxi Normal University, Xi'an, Shaanxi 710062 (China); Xu, Kewei, E-mail: mafei@mail.xjtu.edu.cn, E-mail: kwxu@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China and Department of Physics and Opt-electronic Engineering, Xi'an University of Arts and Science, Xi'an, Shaanxi 710065 (China)

    2014-05-15

    Two types of bilayer thin films with different deposition sequences, i.e., amorphous Ge under Al (a-Ge/Al) and the inverse (Al/a-Ge), were prepared by magnetron sputtering at room temperature. In-situ and ex-situ thermal annealing were compared to study the effect of the stacking sequence on crystallization of amorphous Ge. Although metal-induced crystallization occurred in both cases at low temperature, layer exchange was observed only in a-Ge/Al. In fact, compressive stress could usually be produced when Ge atoms diffused into Al grain boundaries and crystallized there. In the a-Ge/Al system, the stress could be released through diffusion of Al atoms onto the surface and formation of hillocks. Thus, grain boundary (GB) mediated crystallization was dominant in the whole process and layer exchange occurred. However, in the Al/a-Ge system, it was difficult for stress to be relaxed because the Ge sublayer and substrate restricted the diffusion of Al atoms. GB-mediated crystallization was, therefore, considerably suppressed and interface-mediated crystallization was preferred without layer exchange. This leads to distinct morphologies of dendrites in the two systems.

  11. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd...

  12. Electrical Spin Injection and Detection in Ge Nanowires and Topological Insulators

    E-Print Network [OSTI]

    Tang, Jianshi

    2014-01-01

    K. Future Perspectives for Spintronic Devices. J. Phys. D:Ferromagnetic Mn 5 Ge 3 for Spintronic Applications. Phys.Magnetic Anisotropy in Spintronic Devices. Spin 02,

  13. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byrate enhancement is due to a photo-chemical process. Thenanocrystals can be rapidly photo-oxidized. This oxidation

  14. GE to DOE General Counsel; Re:Request for Comment on Large Capacity...

    Broader source: Energy.gov (indexed) [DOE]

    to amend the clothes washer test procedure to reflect efficiency standards of large-capacity residential clothes washer machines. GE also urges the DOE to adopt recommended...

  15. A New Kind of Industrial Company: Read GE's 2014 Annual Report...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    grid sector. Alstom will benefit from GE's strength in technology, service and in growth markets. In July, we began the spinoff of Synchrony Financial, our Retail Finance...

  16. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01

    ferromagnetic Mn 5 Ge 3 for spintronic applications. Phys.Wolf, S. A. et al. Spintronics: a spin-based electronicsdopants of interest for spintronic applications, where both

  17. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Vestrand, W. Thomas Los Alamos National Laboratory Astronomy & Astrophysics(79) Astronomy and Astrophysics Astronomy...

  18. Systme de rapports d'incidents conforme aux normes ITIL pour le

    E-Print Network [OSTI]

    Libre de Bruxelles, Université

    Système de rapports d'incidents conforme aux normes ITIL pour le réseau A.S.T.R.I.D Mémoire . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 Aper¸cu d'ITIL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1.3 Objectifs de ce m´emoire . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 ITIL 4 2.1 Introduction

  19. Is Computational Materials Science Richard LeSar, Materials Science and Technology Division, Los Alamos National

    E-Print Network [OSTI]

    Zhigilei, Leonid V.

    Is Computational Materials Science Overrated? Richard LeSar, Materials Science and Technology of Materials Science and Mineral Engineering, Universityof California, Berkeley, CA 94720, USA, and Materials Computational materials science is one of the fastest growing disciplines in materials science. With an ever

  20. Journe thmatique MOMAS sur l'lectrocintique, le 29 juin 2011 Lyon (campus de la Doua),

    E-Print Network [OSTI]

    Maume-Deschamps, Véronique

    Journée thématique MOMAS sur l'électrocinétique, le 29 juin 2011 à Lyon (campus de la Doua), Amphi Grignard http://oscar.univ-lyon1.fr/appli-externe/plan/plans/plan_campus_ouest.html 09h30-09h40 Accueil et UMR CNRS 5208 Faculté des Sciences et Technologies, Université Lyon 1 43, Bd du onze novembre 1918

  1. Approved Module Information for LE3025, 2014/5 Module Title/Name: Leadership & Management

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    . Students will continue to learn how to: select and use data and information from primary sources (eApproved Module Information for LE3025, 2014/5 Module Title/Name: Leadership & Management Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Judith Baxter

  2. Approved Module Information for LE3024, 2014/5 Module Title/Name: Leadership & Management

    E-Print Network [OSTI]

    Neirotti, Juan Pablo

    will learn how to: select and use data and information from primary sources (e.g. authentic dataApproved Module Information for LE3024, 2014/5 Module Title/Name: Leadership & Management Module? Not Specified Module Credits: 20 Module Management Information Module Leader Name Judith Baxter

  3. Mis `a jour le 5 decembre 2009 Rapport sur ma mission

    E-Print Network [OSTI]

    Waldschmidt, Michel

    Mis `a jour le 5 d´ecembre 2009 Rapport sur ma mission French Science Tour in Pakistan du 25 au Pakistan, `a effectuer une mission French Science Tour in Pakistan du 25 novembre au 2 d'agissait de ma deuxi`eme mission au Pakistan, la premi`ere ayant eu lieu en f´evrier 2009, quand j'avais pass

  4. pour obtenir le grade de Docteur de l'Universit des Antilles et de la Guyane

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . Néanmoins, des mercis spéciaux à Raphaël Achard le sauveur dégazeur, Philippe Tixier et Pierre Direction du CIRAD m'a également toujours soutenue ; merci en particulier à Jean-Pierre Gaillard, Jacky monde que nous espérons meilleurs : Pierre Beaujard, François Leclant, Daniel Barreteau... Heureusement

  5. ED n431 : ICMS Information, communication, modlisation et simulation pour obtenir le grade de

    E-Print Network [OSTI]

    Boyer, Edmond

    . Corinne ROUMES Rapporteur M. Patrick LE CALLET Rapporteur M. Jacques DROULEZ Examinateur M. Jean-Pierre JESSEL Examinateur M. Philippe FUCHS Examinateur M. Guillaume MOREAU Examinateur M. Frédéric ACHARD ses remarques m'a encouragée à être plus précise dans mes futures recherches. · Jean-Pierre Jessel et

  6. A Tutorial on Energy-Based Learning Yann LeCun, Sumit Chopra, Raia Hadsell,

    E-Print Network [OSTI]

    LeCun, Yann

    /learning framework, the wide choice of energy func- tions and loss functionals allows for the design of many types as special types of energy-based models in which the energy function satisfies certain normalizabilityA Tutorial on Energy-Based Learning Yann LeCun, Sumit Chopra, Raia Hadsell, Marc'Aurelio Ranzato

  7. A Tutorial on EnergyBased Learning Yann LeCun, Sumit Chopra, Raia Hadsell,

    E-Print Network [OSTI]

    LeCun, Yann

    /learning framework, the wide choice of energy func­ tions and loss functionals allows for the design of many types as special types of energy­based models in which the energy function satisfies certain normalizabilityA Tutorial on Energy­Based Learning Yann LeCun, Sumit Chopra, Raia Hadsell, Marc'Aurelio Ranzato

  8. LE JOURNAL DE PHYSIQUE Generalization of the Fermi-Segr formula

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1491 LE JOURNAL DE PHYSIQUE Generalization of the Fermi-Segrè formula N. Frôman and P. O. Fröman. 2014 A generalization of the non-relativistic Fermi-Segrè formula into a formula which is valid also. The formula thus obtained, which gives an expression for the limit of u(r)/rl+ 1 as r ~ 0, where u

  9. REGULATION POLITIQUE ET REGULATION D'USAGE DANS LE TEMPS DE TRAVAIL1

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 REGULATION POLITIQUE ET REGULATION D'USAGE DANS LE TEMPS DE TRAVAIL1 : par G. de Terssac, J REGULATION AND REGULATION OF USE OVER WORKING TIME In this paper we discuss « social regulations » as defined by Reynaud (1999). These regulations, in our case (working)-time regulations, are multiple. Their combination

  10. Contribution # l'implantation d'algorithmes g#om#triques sur machine parall#le

    E-Print Network [OSTI]

    Bermond, Jean-Claude

    , les donn#es d'un probl#me sont souvent acquises progressivement, particuli#rement dans le domaine de maintenir une carte des trap#zes sur une bande verticale, l'ensemble de ces cartes formant une partition du#cessaire de maintenir une r#partition #quilibr#e des donn#es entre les processeurs. Pour #viter la saturation

  11. Devoir en temps libre d'algorithmique # rendre le lundi 26 novembre 2001

    E-Print Network [OSTI]

    Portier, Natacha

    autant que possible le m#me poids de fromage chacun. Une donn#e du probl#me de partition est un Portier # r#diger soigneusement. Partition La cr#mi#re donne # Jean-Claude et Pascal un probl#me de partitio* *n ? Montrez qu'il existe une constante K telle que m(S) Km* pour toute

  12. Test de conformit : une approche algbrique Agns Arnould* --Pascale Le Gall**

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    RECHERCHE Test de conformité : une approche algébrique Agnès Arnould* -- Pascale Le Gall** * IRCOM@lami.univ-evry.fr RÉSUMÉ. Nous proposons dans cet article une formalisation du test de conformité contre des spécifications concrétisons les tests abstraits issus des spécifications en tests concrets dans les langages de programmation

  13. Good Practices as a Quality-Oriented Modeling Vincent Le Gloahec

    E-Print Network [OSTI]

    Boyer, Edmond

    Good Practices as a Quality-Oriented Modeling Assistant Vincent Le Gloahec Alkante SAS, France. These good practices are often described in software quality manuals that, in this form, do not guarantee framework enables on the one hand to describe the good practices and on the other hand to check

  14. prsente pour obtenir le grade de Docteur de l' cole Nationale Suprieure des Tlcommunications

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Nouveaux Codes Spatio-Temporels pour les Systèmes Ultra Large Bande par Impulsions Jury composé de enthousi- asme et persévérance le développement de ma thèse. Je remercie également Norbert Daniele qui transmissions, most of the existing space-time (ST) coding schemes (the best known ones in any case) can

  15. Active and Passive Learning in Agent-based Financial Markets Blake LeBaron

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    Active and Passive Learning in Agent-based Financial Markets Blake LeBaron International Business of learning which are present in most agent-based financial markets. First, passive learning refers to a form active and passive learning dynamics. I will define and argue that both these forms of learning

  16. 2-Loop Functional Renormalization Group Theory of the Depinning Transition Pierre Le Doussal1

    E-Print Network [OSTI]

    Wiese, Kay Jörg

    simulations. The high value of 0.5 found in experiments both on the contact line depinning of liquid Helium2-Loop Functional Renormalization Group Theory of the Depinning Transition Pierre Le Doussal1 , Kay and elastic periodic systems at zero temperature, taking properly into account the non- analytic form

  17. Two-loop functional renormalization group theory of the depinning transition Pierre Le Doussal,1

    E-Print Network [OSTI]

    Wiese, Kay Jörg

    with simulations. The high value of 0.5 in experiments both on Helium contact line depinning and on slow crackTwo-loop functional renormalization group theory of the depinning transition Pierre Le Doussal,1 at zero temperature, taking properly into account the nonanalytic form of the dynamical action. This cures

  18. Europe et Japon au coude--coude pour accueillir le racteur ITER

    E-Print Network [OSTI]

    LE 18.12.03 | 13h1713h17 · La compétition pour l'implantation de la machine à fusion thermonucléaire expérimental à fusion thermonucléaire ITER. S'il fait penser à la hampe d'un drapeau fichée sur un sommet spécialistes - dont une cinquantaine d'experts étrangers - de la fusion thermonucléaire, qui viennent d

  19. Come si sceglie l'algoritmo di allineamento? le due proteine

    E-Print Network [OSTI]

    Morante, Silvia

    Come si sceglie l'algoritmo di allineamento? Domande: le due proteine hanno domini simili locale quale algoritmo di allineamento è opportuno utilizzare quale matrice di somiglianza è opportuno;Descrizione di un generico algoritmo di allineamento Siano date due sequenze, S1 e S2 , formate

  20. Big Data Retour vers le Futur -3 -De Statisticien Data Scientist

    E-Print Network [OSTI]

    Besse, Philippe

    Big Data ­ Retour vers le Futur - 3 - De Statisticien à Data Scientist Philippe Besse Aurélien ; statistical learning ; big data. Université de Toulouse ­ INSA, Institut de Mathématiques, UMR CNRS 5219 omiques la décennie suivante ; ­ avènement récent et très médiatisé du big data. Nous terminons en

  1. Complete Genome Sequence of Le Blanc Virus, a Third Caenorhabditis Nematode-Infecting Virus

    E-Print Network [OSTI]

    Wang, David

    Complete Genome Sequence of Le Blanc Virus, a Third Caenorhabditis Nematode-Infecting Virus Carl J,a and Institute of Biology of the Ecole Normale Supérieure (IBENS), Paris, Franceb Orsay virus and Santeuil virus, the first known viruses capable of naturally infecting the nematodes Caenorhabditis elegans

  2. Building the Santa Fe Artificial Stock Market Blake LeBaron

    E-Print Network [OSTI]

    Tesfatsion, Leigh

    Building the Santa Fe Artificial Stock Market Blake LeBaron Brandeis University June 2002 Abstract This short summary presents an insider's look at the construction of the Santa Fe artificial stock of the directions that researchers have been taking is the use of agent-based financial markets. These "bottom- up

  3. Article pour le n10 de la revue Sociologies Pratiques SOCIOLOGIE et MANAGEMENT Allers et retours

    E-Print Network [OSTI]

    Boyer, Edmond

    certifications en France, 96196 en Europe et 203098 dans le monde2 . La norme ISO 14001 propose aux acteurs rapport d'audit est concluant. La certification selon la norme ISO 14001 n'est pas la seule possibilité'évaluation, la certification selon ISO 14001 et l'EMAS sont très proches dans leur fonctionnement et dans leurs

  4. Editorial p 3 Le Forum EPFL en bref... p 4-5

    E-Print Network [OSTI]

    Picasso, Marco

    » évolue également en 2013 et devient le « Forum Respon- sable » ! En effet, après la certification ISO 14 certification ISO 9001, standard international en matiere de gestion de la qualité. Nous nous réjouissons de esprit corporate ! Comité Forum EPFL 2013 ISO 14001 r esponsabl e a LDE_infos_partie1.indd 3 28.08.13 11

  5. Shannon meets Blackwell and Le Cam: channels, codes, and statistical experiments

    E-Print Network [OSTI]

    Raginsky, Maxim

    Abstract--The Blackwell­Le Cam decision theory provides an approximation framework for statistical). This theory has led to deep results in mathematical statistics, such as the proof of asymptotic equivalence, a statistical experiment is just a noisy communication channel with an uncoded input [9]; all the processing

  6. JAMUS: Java Accommodation of Mobile Untrusted Software Nicolas Le Sommer and Frdric Guidec

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    JAMUS: Java Accommodation of Mobile Untrusted Software Nicolas Le Sommer and Frédéric Guidec (Java Accommodation of Mobile Un- trusted Software) platform we tackle these problems based on a contractual approach of resource manage- ment and access control. JAMUS can accommodate mo- bile Java

  7. The first ML scale for North of Vietnam Le Minh Nguyen a,d

    E-Print Network [OSTI]

    Wu, Yih-Min

    The first ML scale for North of Vietnam Le Minh Nguyen a,d , Ting-Li Lin a,*, Yih-Min Wu a , Bor Attenuation Vietnam Northern Vietnam a b s t r a c t The first local magnitude scale (ML) for Northern Vietnam has been derived using a portable broadband seismic network in Northern Vietnam as part

  8. Universit Paul Czanne -Aix-Marseille III pour obtenir le grade de Docteur en Sciences

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Université Paul Cézanne - Aix-Marseille III THÈSE pour obtenir le grade de Docteur en Sciences de l'Université Paul Cézanne - Aix-Marseille III n 2007AIX30060 Discipline : Optique électromagnétique et image Chat Perdu. À Robert Mi(t)chou(m). Aux Special Ca's (Frères)...et à leur Moitié (Relax). Aux Morbai

  9. LE CONSEIL D'ADMINISTRATION -ANNEXES Conseil d'administration au 1er

    E-Print Network [OSTI]

    DSFDME DRV DSS DEV SAJ SAS #12;58 LES UNITÉS DE RECHERCHE ET LES UNITÉS DE SERVICE au 1er juillet 200556 LE CONSEIL D'ADMINISTRATION - ANNEXES Conseil d'administration au 1er juillet 2005 Président;ORGANIGRAMME DES SERVICES CENTRAUXAU 1ER JUILLET 2005 CENTRES RÉGIONAUX EN FRANCE REPRÉSENTATIONS À L

  10. Reprsentations professionnelles, satisfaction au travail et choix de carrire des personnels infirmiers : le rle des

    E-Print Network [OSTI]

    Jeanjean, Louis

    infirmiers : le rôle des valeurs d'autonomie Professional representations, job satisfaction, and career inciter les infirmiers à quitter leur profession. Dans ce cadre, la satisfaction au travail apparaît comme un facteur explicatif majeur, dépendant de la place accordée au "rôle propre" infirmier. Par ailleurs

  11. Facult des sciences infirmires Le Baccalaurat en sciences infirmires est offert selon divers par-

    E-Print Network [OSTI]

    Parrott, Lael

    -Baccalauréat intégré et à l'intention des infirmières et infirmiers en exercice. ­ Les programmes 1-630-4-0, 1 professionnelles L'article 36 de la Loi sur les infirmières et les infirmiers (Lii, art. 36, 2002) présente ainsi le champ de pratique des infirmières : « L'exercice infirmier consiste à évaluer l'état de santé d

  12. Commission nationale franaise pour l'UNESCO Colloque sur le mtier d'enseignant du suprieur

    E-Print Network [OSTI]

    Boyer, Edmond

    'organiser la réponse à un appel d'offre, d'améliorer les relations internationales de son institution, de autour de cinq catégories : - l'enseignement - la recherche - l'administration et le « management » - la métier d'universitaire aux activités d'enseignement et de recherche. De multiples définitions et

  13. Cursus avant le Master Professionnel : 15 hommes et 10 femmes ont rpondu au questionnaire,

    E-Print Network [OSTI]

    Heurteaux, Yanick

    3 Génie électrique (réponse autre) Diplôme supérieur d'Assistant en Management (réponse autre) DUT - sécurité - environnement dans des entreprises de toutes tailles, dans le milieu hospitalier, mais aussi Management d'une équipe de 7 agents spécialisés en QSE + documentation auditeur. F Laboratoire de mesure de

  14. Elsevier Editorial System(tm) for Le Pharmacien hospitalier et clinicien Manuscript Draft

    E-Print Network [OSTI]

    Boyer, Edmond

    Elsevier Editorial System(tm) for Le Pharmacien hospitalier et clinicien Manuscript Draft hospitalier : enquête sur les outils documentaires employés et expression du ressenti. Drug-drug interactions management by hospital pharmacists: survey of used documentation tools and ease self-assessment. Article Type

  15. ENTROPY: A COUNTERPART IN STATISTICAL ENERGY A. Le Bot, A. Carbonelli, J. Perret-Liaudet

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    to the energy level. ICSV18, 10­14 July 2011, Rio de Janeiro, Brazil 1 #12;18th International Congress on SoundENTROPY: A COUNTERPART IN STATISTICAL ENERGY ANALYSIS A. Le Bot, A. Carbonelli, J. Perret. Statistical energy analysis (SEA) is the most famous method intended to prediction of sound and vibration

  16. Dure des phases vgtative et reproductrice chez le mas. Influence du gnotype et du milieu

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    with or without plastic mulch).' Soil ' temperature was more representative than 'air temperature ' to explain, dates of sowing, plastic mulch. I. INTRODUCTION Le cycle du maïs est constitué d'une succession de années, semis décalés, sol couvert ou non de mulch plastique. La vitesse de développement jusqu'à l

  17. Mining Association Rules of Simple Conjunctive Queries Bart Goethals Wim Le Page

    E-Print Network [OSTI]

    Antwerpen, Universiteit

    Mining Association Rules of Simple Conjunctive Queries Bart Goethals Wim Le Page University of Antwerp, Belgium Heikki Mannila HIIT, Helsinki University of Technology University of Helsinki Abstract We present an algorithm for mining association rules in ar- bitrary relational databases. We define

  18. Heat capacity of silver paint A. LeR. Dawson and D. H. Ryan

    E-Print Network [OSTI]

    Ryan, Dominic

    Heat capacity of silver paint A. LeR. Dawson and D. H. Ryan Department of Physics, Center; accepted for publication 15 March 1996 The heat capacity [CP(T)] of a silver loaded paint has been measured,3 however, we have found a silver paint Flexible Silver No. 16 Ref. 4 to be better than Apiezon N for many

  19. Heat Capacity of Silver Paint A.LeR. Dawson and D.H. Ryan

    E-Print Network [OSTI]

    Ryan, Dominic

    Heat Capacity of Silver Paint A.LeR. Dawson and D.H. Ryan Department of Physics The heat capacity (C P (T )) of a silver loaded paint has been measured between 3 K and 30 K. It is shown is Apiezon N grease [2,3], however, we have found a silver paint (Flexible Silver #16 [4]) to be better than

  20. Composition du Comit de slection pour le recrutement d'un professeur 1re

    E-Print Network [OSTI]

    Gutkin, Boris

    Basin (professeur ETH Zurich) sécurité · John Canny (professeur UC Berkeley) robotique, HCI · Laurence comité de sélection se réunira au DI - salle S16 - 45 rue d'Ulm - 75005 Paris : - le vendredi 30 janvier

  1. CNRS Dlgation Cte d'Azur Micro Manager et Arduino pour le pilotage de stations de microscopie 1er au 3 juin 2015

    E-Print Network [OSTI]

    Boulicaut, Jean-François

    CNRS ­ Délégation Côte d'Azur ­ Micro Manager et Arduino pour le pilotage de stations de microscopie ­ 1er au 3 juin 2015 Micro Manager et Arduino pour le pilotage de stations de microscopie Public-midi Arduino : théorie Atelier Arduino Pratique : leds, tensions, températures Commande via le serial

  2. Une plate-forme en Midi-Pyrnes Par La rdaction -Publi le 30 janvier 2014 | L'Usine Nouvelle n 3362

    E-Print Network [OSTI]

    Bordenave, Charles

    ) cherchent à structurer une nouvelle plate-forme mutualisée dans le domaine des drones, à Toulouse. Le projet pourrait bénéficier d'un soutien du conseil régional, dans le cadre du nouveau plan Robotique et drones'un centre d'expérimentation dédié aux drones de moins de 150 kilos. "L'objectif est de se positionner comme

  3. Direct band gap optical emission from compressively strained Ge films grown on relaxed Si{sub 0.5}Ge{sub 0.5} substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K. [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)] [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2013-10-14

    Compressively strained Ge films have been grown on relaxed Si{sub 0.5}Ge{sub 0.5} virtual substrate in ultra high vacuum using molecular beam epitaxy. Structural characterization has shown that the Ge films are compressively strained with partial strain relaxation in a film thicker than 3.0 nm, due to onset of island nucleation. Photoluminescence spectra exhibit the splitting of degenerate Ge valence band into heavy hole and light hole bands with a broad direct band gap emission peak around 0.81 eV. Temperature and excitation power dependent emission characteristics have been studied to investigate the mechanism of luminescence quenching at high temperatures and the role of non-radiative recombination centers.

  4. Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

    SciTech Connect (OSTI)

    Zhang, W. F.; Nishimula, T.; Nagashio, K.; Kita, K.; Toriumi, A.

    2013-03-11

    We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

  5. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, VOL. 7, NO. 1, MARCH 2007 181 Impact of Strain or Ge Content on the Threshold

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    of Strain or Ge Content on the Threshold Voltage of Nanoscale Strained-Si/SiGe Bulk MOSFETs M. Jagadesh--The impact of strain on the threshold voltage of nanoscale strained-Si/SiGe MOSFETs is studied by developing a compact analytical model. Our model includes the effects of strain (Ge mole fraction in SiGe substrate

  6. Massive "spin-2" theories in arbitrary $D \\ge 3$ dimensions

    E-Print Network [OSTI]

    D. Dalmazi; A. L. R. dos Santos; E. L. Mendonça

    2014-08-28

    Here we show that in arbitrary dimensions $D\\ge 3$ there are two families of second order Lagrangians describing massive "spin-2" particles via a nonsymmetric rank-2 tensor. They differ from the usual Fierz-Pauli theory in general. At zero mass one of the families is Weyl invariant. Such massless theory has no particle content in $D=3$ and gives rise, via master action, to a dual higher order (in derivatives) description of massive spin-2 particles in $D=3$ where both the second and the fourth order terms are Weyl invariant, contrary to the linearized New Massive Gravity. However, only the fourth order term is invariant under arbitrary antisymmetric shifts. Consequently, the antisymmetric part of the tensor $e_{[\\mu\

  7. Complexes of self-interstitials with oxygen atoms in Ge

    SciTech Connect (OSTI)

    Khirunenko, L. I.; Pomozov, Yu. V.; Sosnin, M. G.; Abrosimov, N. V.; Riemann, H.

    2014-02-21

    Interactions of germanium self-interstitials with interstitial oxygen atoms in Ge subjected to irradiation at ?80 K and subsequently to annealing have been studied. To distinguish the processes involving vacancies and self-interstitials the doping with tin was used. It was shown that absorption lines with maximum at 602, 674, 713 and 803 cm{sup ?1} are self-interstitials-related. Two lines at 602 and 674, which develop upon annealing in the temperature range 180–240 K, belong to IO complexes, while the bands at 713 and 803 cm{sup ?1}, which emerge after annealing at T>220 K, are associated with I{sub 2}O. It is argued that the annealing of IO occurs by two mechanisms: by dissociation and by diffusion.

  8. Pressure Safety of JLAB 12GeV Upgrade Cryomodule

    SciTech Connect (OSTI)

    Cheng, Gary [JLAB; Wiseman, Mark A. [JLAB; Daly, Ed [JLAB

    2009-11-01

    This paper reviews pressure safety considerations, per the US Department of Energy (DOE) 10CFR851 Final Rule [1], which are being implemented during construction of the 100 Megavolt Cryomodule (C100 CM) for Jefferson Lab’s 12 GeV Upgrade Project. The C100 CM contains several essential subsystems that require pressure safety measures: piping in the supply and return end cans, piping in the thermal shield and the helium headers, the helium vessel assembly which includes high RRR niobium cavities, the end cans, and the vacuum vessel. Due to the vessel sizes and pressure ranges, applicable national consensus code rules are applied. When national consensus codes are not applicable, equivalent design and fabrication approaches are identified and implemented. Considerations for design, material qualification, fabrication, inspection and examination are summarized. In addition, JLAB’s methodologies for implementation of the 10 CFR 851 requirements are described.

  9. Blazar Variability and Evolution in the GeV Regime

    E-Print Network [OSTI]

    Tsujimoto, S; Nishijima, K; Kodani, K

    2015-01-01

    One of the most important problem of the blazar astrophysics is to understand the physical origin of the blazar sequence. In this study, we focus on the GeV gamma-ray variability of blazars and evolution perspective we search the relation between the redshift and the variability amplitude of blazars for each blazar subclass. We analyzed the Fermi-LAT data of the TeV blazars and the bright AGNs (flux $\\geq$ 4$\\times10^{-9}$ cm$^{-2}$s$^{-1}$) selected from the 2LAC (the 2nd LAT AGN catalog) data base. As a result, we found a hint of the correlation between the redshift and the variability amplitude in the FSRQs. Furthermore the BL Lacs which have relatively lower peak frequency of the synchrotron radiation and relatively lower redshift, have a tendency to have a smaller variability amplitude.

  10. Signal modeling of high-purity Ge detectors with a small read-out electrode and application to neutrinoless double beta decay search in Ge-76

    E-Print Network [OSTI]

    M. Agostini; C. A. Ur; D. Budjáš; E. Bellotti; R. Brugnera; C. M. Cattadori; A. di Vacri; A. Garfagnini; L. Pandola; S. Schönert

    2011-01-17

    The GERDA experiment searches for the neutrinoless double beta decay of Ge-76 using high-purity germanium detectors enriched in Ge-76. The analysis of the signal time structure provides a powerful tool to identify neutrinoless double beta decay events and to discriminate them from gamma-ray induced backgrounds. Enhanced pulse shape discrimination capabilities of "Broad Energy Germanium" detectors with a small read-out electrode have been recently reported. This paper describes the full simulation of the response of such a detector, including the Monte Carlo modeling of radiation interaction and subsequent signal shape calculation. A pulse shape discrimination method based on the ratio between the maximum current signal amplitude and the event energy applied to the simulated data shows quantitative agreement with the experimental data acquired with calibration sources. The simulation has been used to study the survival probabilities of the decays which occur inside the detector volume and are difficult to assess experimentally. Such internal decay events are produced by the cosmogenic radio-isotopes Ge-68 and Co-60 and the neutrinoless double beta decay of Ge-76. Fixing the experimental acceptance of the double escape peak of the 2.614 MeV photon to 90%, the estimated survival probabilities at Qbb = 2.039 MeV are (86+-3)% for Ge-76 neutrinoless double beta decays, (4.5+-0.3)% for the Ge-68 daughter Ga-68, and (0.9+0.4-0.2)% for Co-60 decays.

  11. The cross-plane thermoelectric properties of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices

    SciTech Connect (OSTI)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)] [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)] [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Etzelstorfer, T.; Stangl, J. [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz (Austria)] [Institute of Semiconductor and Solid State Physics, Johannes Kepler Universität, Linz (Austria); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Wolfgang-Pauli-Str. 16, CH-8093 Zurich (Switzerland)] [Electron Microscopy ETH Zurich, ETH Zurich, Wolfgang-Pauli-Str. 16, CH-8093 Zurich (Switzerland)

    2013-09-30

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si{sub 0.5}Ge{sub 0.5} superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 ?V/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm{sup ?1}K{sup ?1} which are lower than comparably doped bulk Si{sub 0.3}Ge{sub 0.7} but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance.

  12. Infrared absorption of n-type tensile-strained Ge-on-Si

    E-Print Network [OSTI]

    Wang, Xiaoxin

    We analyze the IR absorption of tensile-strained, n-type Ge for Si-compatible laser applications. A strong intervalley scattering from the indirect L valleys to the direct ? valley in n[superscript +] Ge-on-Si is reported ...

  13. Donor-vacancy pairs in irradiated n-Ge: A searching look at the problem

    SciTech Connect (OSTI)

    Emtsev, Vadim; Oganesyan, Gagik [IoffePhysicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ulitsa 26, 194021 St. Petersburg (Russian Federation)

    2014-02-21

    The present situation concerning the identification of vacancy-donor pairs in irradiated n-Ge is discussed. The challenging points are the energy states of these defects deduced from DLTS spectra. Hall effect data seem to be at variance with some important conclusions drawn from DLTS measurements. Critical points of the radiation-produced defect modeling in n-Ge are highlighted.

  14. GeV electron beams from a centimeter-scale channel guided laser wakefield acceleratora...

    E-Print Network [OSTI]

    Geddes, Cameron Guy Robinson

    GeV electron beams from a centimeter-scale channel guided laser wakefield acceleratora... K on the generation of GeV-class electron beams using an intense femtosecond laser beam and a 3.3 cm long preformed from 10­40 TW were guided over more than 20 Rayleigh ranges and high quality electron beams with energy

  15. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department, tandem and triple-junction a-SiGe based solar cells and materials [6-19]. Much of the research is also light and bias voltage for the measurement of multiple-junction cells. Materials characterization using

  16. |. aJr iri? GE DOCUMENT NO. 81AEP-003 DEVELOPMENT AND DEMONSTRATION

    E-Print Network [OSTI]

    Oak Ridge National Laboratory

    I / ~'j |. aJr iri? GE DOCUMENT NO. 81AEP-003 DEVELOPMENT AND DEMONSTRATION OF A STIRLING Government or any agency thereof. I #12;GE DOCUMENT NO. 81AEP-003 DEVELOPMENT AND DEMONSTRATION OF A STIRLING . . . . . . . . . . . . . . . . . 2-1 2.2 Engine/Compressor/Combustor Performance . . . . . . 2-1 5*C~~2.2.1 Performance

  17. Understanding Phase Transformation in Crystalline Ge Anodes for Li-Ion Batteries

    E-Print Network [OSTI]

    Cui, Yi

    studies. 1. INTRODUCTION One of the most important renewable energy storage technologies is lithium to silicon. Despite recent studies on Ge electrode reactions, there is still limited understanding elements, such as silicon (Si) and germanium (Ge), are very attractive candidates for high- capacity

  18. FTIR Emission Spectra, Molecular Constants, and Potential Curve of Ground State GeO

    E-Print Network [OSTI]

    Le Roy, Robert J.

    FTIR Emission Spectra, Molecular Constants, and Potential Curve of Ground State GeO Edward G. Lee-resolution FTIR emission spectroscopy measurements for the five common isoto- pomers of GeO are combined­9), photoelectron spectroscopy (10), electronic absorption (11­13), and emission (14) spectroscopy, and in matrix

  19. Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb

    E-Print Network [OSTI]

    Weinreb, Sander

    Experimental Cryogenic Modeling and Noise of SiGe HBTs Joseph C. Bardin and Sander Weinreb with discussion of performance enhancements due to cooling of the device. Finally, the modeled noise performanceGe), cryogenic, low noise amplifier (LNA), noise parameters, transistor modeling. I. INTRODUCTION Very low-noise

  20. ORIGINAL PAPER Equation of state of MgGeO3 perovskite to 65 GPa: comparison

    E-Print Network [OSTI]

    Duffy, Thomas S.

    ORIGINAL PAPER Equation of state of MgGeO3 perovskite to 65 GPa: comparison with the post-perovskite- erties of the perovskite phase were compared to MgGeO3 post-perovskite phase near the observed phase the properties of the perovskite and post-perovskite phases in silicates. Keywords Germanate Á Perovskite Á

  1. Optical gain from the direct gap transition of Ge-on-Si at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    We report direct band gap optical gain of tensile strained n+ epitaxial Ge-on-Si at room temperature, which confirms that band-engineered Ge-on-Si is a promising gain medium for monolithic optical amplifiers and lasers on Si.

  2. Atomic and electronic structure of acetic acid on Ge(100) Do Hwan Kim a,b

    E-Print Network [OSTI]

    Kim, Sehun

    Atomic and electronic structure of acetic acid on Ge(100) Do Hwan Kim a,b , Eunkyung Hwang to investigate the atomic and electronic structure of acetic acid adsorbed on Ge(100) surface. Due to its acidity, acetic acid dissociates and the resulting electron-rich acetate group reacts with the electron

  3. Modern Trend of High-Speed SiGe Heterojunction Bipolar Transistors (HBTs) (Invited Paper)

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    , etc. There certainly exist extra cost for SiGe HBT technology compared to baseline CMOS technology be noted that the cost for the highly expensive phase-shift mask(s) required for CMOS technology to exhibit-gu, Seoul 136-701, Korea jsrieh@korea.ac.kr Abstract SiGe HBT technology has emerged as a strong contender

  4. Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States); Petersen, D. H. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); Hansen, O. [DTU Nanotech, Department of Micro- and Nanotechnology, Technical University of Denmark, DK-2800 Kgs. Lyngby (Denmark); CINF, Center for Individual Nanoparticle Functionality, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lin, R.; Nielsen, P. F. [CAPRES A/S, Scion-DTU, DK-2800 Kgs. Lyngby (Denmark); Romano, L. [IMM-CNR MATIS and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, I-95123 Catania (Italy); Doyle, B. L. [Sandia National Laboratories, MS-1056, Albuquerque, New Mexico 87185 (United States); Kontos, A. [Applied Materials, Gloucester, Massachusetts 01930 (United States)

    2012-12-15

    The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Sign 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.

  5. An ultra-thin buffer layer for Ge epitaxial layers on Si

    SciTech Connect (OSTI)

    Kawano, M.; Yamada, S.; Tanikawa, K.; Miyao, M.; Hamaya, K. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)] [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan); Sawano, K. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)] [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082 (Japan)

    2013-03-25

    Using an Fe{sub 3}Si insertion layer, we study epitaxial growth of Ge layers on a Si substrate by a low-temperature molecular beam epitaxy technique. When we insert only a 10-nm-thick Fe{sub 3}Si layer in between Si and Ge, epitaxial Ge layers can be obtained on Si. The detailed structural characterizations reveal that a large lattice mismatch of {approx}4% is completely relaxed in the Fe{sub 3}Si layer. This means that the Fe{sub 3}Si layers can become ultra-thin buffer layers for Ge on Si. This method will give a way to realize a universal buffer layer for Ge, GaAs, and related devices on a Si platform.

  6. Mn solid solutions in self-assembled Ge/Si (001) quantum dot heterostructures

    SciTech Connect (OSTI)

    Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

    2012-12-10

    Heteroepitaxial Ge{sub 0.98}Mn{sub 0.02} quantum dots (QDs) on Si (001) were grown by molecular beam epitaxy. The standard Ge wetting layer-hut-dome-superdome sequence was observed, with no indicators of second phase formation in the surface morphology. We show that Mn forms a dilute solid solution in the Ge quantum dot layer, and a significant fraction of the Mn partitions into a sparse array of buried, Mn-enriched silicide precipitates directly underneath a fraction of the Ge superdomes. The magnetic response from the ultra-thin film indicates the absence of robust room temperature ferromagnetism, perhaps due to anomalous intermixing of Si into the Ge quantum dots.

  7. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  8. Ultra-high frequency photoconductivity decay in GaAs/Ge/GaAs double heterostructure grown by molecular beam epitaxy

    SciTech Connect (OSTI)

    Hudait, M. K.; Zhu, Y. [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States); Johnston, S. W. [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)] [National Renewable Energy Laboratory, Golden, Colorado 80401 (United States); Maurya, D.; Priya, S. [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Center for Energy Harvesting Materials and Systems (CEHMS), Virginia Tech, Blacksburg, Virginia 24061 (United States); Umbel, R. [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)] [Materials Science and Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-04

    GaAs/Ge/GaAs double heterostructures (DHs) were grown in-situ using two separate molecular beam epitaxy chambers. High-resolution x-ray rocking curve demonstrates a high-quality GaAs/Ge/GaAs heterostructure by observing Pendelloesung oscillations. The kinetics of the carrier recombination in Ge/GaAs DHs were investigated using photoconductivity decay measurements by the incidence excitation from the front and back side of 15 nm GaAs/100 nm Ge/0.5 {mu}m GaAs/(100)GaAs substrate structure. High-minority carrier lifetimes of 1.06-1.17 {mu}s were measured when excited from the front or from the back of the Ge epitaxial layer, suggests equivalent interface quality of GaAs/Ge and Ge/GaAs. Wavelength-dependent minority carrier recombination properties are explained by the wavelength-dependent absorption coefficient of Ge.

  9. SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)

    E-Print Network [OSTI]

    ­8 or Ge condensation during SiGe oxidation.9 In these approaches, the relaxed SGOI layer serves as a ten chemical mechanical polishing step to elimi- nate the surface crosshatch roughness induced by the com

  10. Adjudication Concerning the Erection of Three Temporary Sectional Buildings for the Staff of the 300 GeV Programme

    E-Print Network [OSTI]

    1971-01-01

    Adjudication Concerning the Erection of Three Temporary Sectional Buildings for the Staff of the 300 GeV Programme

  11. Adjudication of the Building Construction Work for the Laboratories and Offices of the 300 GeV Programme

    E-Print Network [OSTI]

    1971-01-01

    Adjudication of the Building Construction Work for the Laboratories and Offices of the 300 GeV Programme

  12. Adjudication Concerning the Civil Engineering Work for the Auxiliary Buildings of the 300 GeV Accelerator

    E-Print Network [OSTI]

    1972-01-01

    Adjudication Concerning the Civil Engineering Work for the Auxiliary Buildings of the 300 GeV Accelerator

  13. Production of isotopes in 1.A GeV $^{208}Pb$ on proton reactions relevant for accelerator-driven systems

    E-Print Network [OSTI]

    Wlazlo, W; Armbruster, P; Benlliure, J; Bernas, M; Boudard, A; Czajkowski, S; Farget, F; Legrain, R; Leray, S; Mustapha, B; Pravikoff, M S; Schmidt, K H; Stéphan, C; Taieb, J; Tassan-Got, L; Volant, C

    1999-01-01

    Production of isotopes in 1.A GeV $^{208}Pb$ on proton reactions relevant for accelerator-driven systems

  14. ISFA Lyon et IRA Le Mans INSTITUT DE SCIENCE FINANCIERE ET D'ASSURANCES

    E-Print Network [OSTI]

    Di Girolami, Cristina

    ISFA Lyon et IRA Le Mans INSTITUT DE SCIENCE FINANCIERE ET D'ASSURANCES Domaine Scientifique de Gerland 50 Avenue Tony Garnier 69366 LYON CEDEX 07 Tél. (33) 04.37.28.74.40 Fax (33) 04.37.28.76.32 E-mail : isfa@univ-lyon1.fr 2e Journée de séminaires actuariels Vendredi 1er février 2013 àà ll '' II .. SS

  15. Le service d'hbergement web Journes Mathrice Lyon, octobre 2011

    E-Print Network [OSTI]

    Menichi, Luc

    Le service d'hébergement web de la PLM Journées Mathrice Lyon, octobre 2011 #12;L'offre de service les utilisateurs : http://plm.math.cnrs.fr #12;Architecture (logique) rprox db cms web05 web04 web03 web02 web01 htdocs NFS http ssh mysql #12;htdocs Architecture (physique) rprox db cms NFS web05 web04

  16. School of Psychology www.le.ac.uk/psychology/ POSTGRADUATE STUDIES

    E-Print Network [OSTI]

    Banaji,. Murad

    School of Psychology www.le.ac.uk/psychology/ POSTGRADUATE STUDIES MSc Psychological Research in Psychological Research Methods 3 Research in the School 4 Research Degrees: PhD / MPhil 4 How to Apply 6 The School of Psychology 7 The University of Leicester 7 The City 7 U n i v e r s i t y o f L e i c e s t e r

  17. Quand le port d'Ostie dvoile ses mystres Depuis la redcouverte du site antique d'Ostie, la

    E-Print Network [OSTI]

    van Tiggelen, Bart

    lalettrede i'inshs A PROPOS Quand le port d'Ostie dévoile ses mystères Depuis la redécouverte du site antique d'Ostie, la localisation du port romain fait l'objet de débats et sa recherche est

  18. C(re)ek-storation Community Collaboration Site: North Fork of Strawberry Creek by La Loma and Le Conte Avenues

    E-Print Network [OSTI]

    Tannenbaum, Sara Rose

    2011-01-01

    1987. Excerpts from: The Strawberry Creek Management Plan.and Vince Resh. 1992. Strawberry Creek on the University ofSite: North Fork of Strawberry Creek by La Loma and Le Conte

  19. CAHIER DE RECHERCHE : 2008-04 E1 Grer la mobilit professionnelle et l'adaptabilit : le cas des

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    infirmiers. RAPIAU Marie-Thérèse Unité Mixte de Recherche CNRS / Université Pierre Mendès France Grenoble 2 : Gérer la mobilité professionnelle et l'adaptabilité : le cas des infirmiers. Título : Gerenciar, mobilité professionnelle, compétences générales, infirmiers, mondialisation Palavras chave : gestão

  20. Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Photoluminescence from electron-hole plasmas confined in Si/Si 1-,Ge,/Si quantum wells X. Xiao, C 1992) We report the first observation of photoluminescence from electron-hole plasmas in Si/S&,sGe of the physical processes un- derlying luminescence in Si, -,GeX alloys, especially at high carrier densities

  1. Threshold Pressure for Disappearance of Size-Induced Effect in Spinel-Structure Ge3N4 Nanocrystals

    E-Print Network [OSTI]

    Downs, Robert T.

    Threshold Pressure for Disappearance of Size-Induced Effect in Spinel-Structure Ge3N4 Nanocrystals demonstrate that the incompressibility of spinel Ge3N4 nanocrystals decreases when the pressure is elevated above 20 GPa. Ge3N4 nanocrystals initially exhibit a higher bulk modulus of 381(2) GPa. But, above 20

  2. Project #8: Zigang Ge and Robert Guldberg: Cartilage Regeneration with Functional Biomaterials and Quantitative Assessment of Regeneration

    E-Print Network [OSTI]

    Weber, Rodney

    Project #8: Zigang Ge and Robert Guldberg: Cartilage Regeneration with Functional Biomaterials from Georgia Institute of Technology and the GE lab from Peking University. The proposed collaboration the development of effective strategies for functional restoration of degenerated articular joints. Ge's lab

  3. 05Mar09 ANALYSISIn crisis, GE finds its deep bench not so magical By James B. Kelleher

    E-Print Network [OSTI]

    Kuzmanovic, Aleksandar

    05Mar09 ANALYSISIn crisis, GE finds its deep bench not so magical By James B. Kelleher CHICAGO, March 5 (Reuters) Crotonville, we have a problem. The travails of General Electric Co GE and expensive training program credited with creating those managers. In recent weeks, GE executives have

  4. Disordered electronic and magnetic systems - transition metal (Mn) and rare earth (Gd) doped amorphous group IV semiconductors (C, Si, Ge)

    E-Print Network [OSTI]

    Zeng, Li

    2007-01-01

    Magnetization data for a-Mn 0.15 Ge 0.85 ?lms mea- suredSi 1?x and a-Mn x Ge 1?x samples. . . . . . . . . . . . . .both a-Mn x Si 1?x and a-Mn x Ge 1?x as a func- tion of Mn

  5. A search for GeV-TeV emission from Gamma-ray Bursts using the Milagro detector

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    A search for GeV-TeV emission from Gamma-ray Bursts using the Milagro detector p. M. Saz Parkinson for >1 GeV emission from these bursts. Milagro is a water Cerenkov detector designed primarily", where the rates of individual photomultiplier tubes can be used to detect emission above 1 GeV (albeit

  6. The electrical and material properties of strained SiGe alloys have been overviewed and the historical sur-

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    semiconductor materials. The Table 1. Selected properties of bulk Si and Ge at 300K[1]. Property Si Ge CrystalAbstract The electrical and material properties of strained SiGe alloys have been overviewed systems. In the past, III-V semiconductor-based systems were deemed to be most suitable for high

  7. Saclay, le 24 avril 2015 EMBARGO JUSQU'AU 24 AVRIL 2015 11H00 (HEURE DE PARIS)

    E-Print Network [OSTI]

    van Tiggelen, Bart

    1/3 Saclay, le 24 avril 2015 EMBARGO JUSQU'AU 24 AVRIL 2015 à 11H00 (HEURE DE PARIS) Batteries Li'utilisation. Au fil de l'utilisation d'une batterie d'accumulateurs, l'électrolyte, qui permet le transport des'utilisation de l'appareil. L'électrolyte est donc un composant clé pour des batteries sûres, fiables et

  8. Pour obtenir le grade de DOCTEUR DE L'UNIVERSIT E DE GRENOBLE

    E-Print Network [OSTI]

    Boyer, Edmond

    ultra-scalable hybrid architectures becomes possible which exploit low energy operation, fast write of these new memories is not limited to stand- alone (ultra-high density), but is also suitable for embedded´etal ´electrochimiquement actif et de sulfure de germanium amorphe (GeS2) agissant comme ´electrolyte. Leur fonctionnement

  9. Impact of Minority Carrier Lifetime on the Performance of Strained Ge Light Sources

    E-Print Network [OSTI]

    Sukhdeo, David S; Birendra,; Dutt,; Nam, Donguk

    2015-01-01

    We theoretically investigate the impact of the defect-limited carrier lifetime on the performance of germanium (Ge) light sources, specifically LEDs and lasers. For Ge LEDs, we show that improving the material quality can offer even greater enhancements than techniques such as tensile strain, the leading approach for enhancing Ge light emission. Even for Ge that is so heavily strained that it becomes a direct bandgap semiconductor, the ~1 ns defect-limited carrier lifetime of typical epitaxial Ge limits the LED internal quantum efficiency to less than 10%. In contrast, if the epitaxial Ge carrier lifetime can be increased to its bulk value, internal quantum efficiencies exceeding 90% become possible. For Ge lasers, we show that the defect-limited lifetime becomes increasing important as tensile strain is introduced, and that this defect-limited lifetime must be improved if the full benefits of strain are to be realized. We conversely show that improving the material quality supersedes much of the utility of n...

  10. Density functional theory calculations of stability and diffusion mechanisms of impurity atoms in Ge crystals

    SciTech Connect (OSTI)

    Maeta, Takahiro; Sueoka, Koji

    2014-08-21

    Ge-based substrates are being developed for applications in advanced nano-electronic devices because of their higher intrinsic carrier mobility than Si. The stability and diffusion mechanism of impurity atoms in Ge are not well known in contrast to those of Si. Systematic studies of the stable sites of 2nd to 6th row element impurity atoms in Ge crystal were undertaken with density functional theory (DFT) and compared with those in Si crystal. It was found that most of the impurity atoms in Ge were stable at substitutional sites, while transition metals in Si were stable at interstitial sites and the other impurity atoms in Si were stable at substitutional sites. Furthermore, DFT calculations were carried out to clarify the mechanism responsible for the diffusion of impurity atoms in Ge crystals. The diffusion mechanism for 3d transition metals in Ge was found to be an interstitial-substitutional diffusion mechanism, while in Si this was an interstitial diffusion mechanism. The diffusion barriers in the proposed diffusion mechanisms in Ge and Si were quantitatively verified by comparing them to the experimental values in the literature.

  11. Hydrogen Sensor Based on Pd/GeO{sub 2} Using a Low Cost Electrochemical Deposition

    SciTech Connect (OSTI)

    Jawad, M. J.; Hashim, M. R.; Ali, N. K.

    2011-05-25

    This work reports on a synthesis of sub micron germanium dioxide (GeO{sub 2}) on porous silicon (PS) by electrochemical deposition. n-type Si (100) wafer was used to fabricate (PS) using conventional method of electrochemical etching in HF based solution. A GeCl{sub 4} was directly hydrolyzed by hydrogen peroxide to produce pure GeO{sub 2}, and then electrochemically deposited on PS. Followed by palladium (Pd) contact on GeO{sub 2} /PS was achieved by using RF sputtering technique. The grown GeO{sub 2} crystals were characterized using SEM and EDX. I-V characteristics of Pd/ GeO{sub 2} were recorded before and after hydrogen gas exposure as well as with different H{sub 2} concentrations and different applied temperatures. The sensitivity of Pd/ GeO{sub 2} also has been investigated it could be seen to increase significantly with increased hydrogen concentration while it decreased with increase temperature.

  12. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  13. Energy (GeV) dN/dE(ergcm2

    E-Print Network [OSTI]

    Nishikawa, Ken-Ichi

    Energy (GeV) -1 10 1 10 2 10 )-1 s-2 dN/dE(ergcm2 E -12 10 -11 10 -10 10 PSR J0007+7303 Full Band Fit (PLEC1) Energy Band Fits #12;Energy (GeV) -1 10 1 10 2 10 )-1 s-2 dN/dE(ergcm2 E -12 10 PSR J0023+0923 Full Band Fit (PLEC1) Energy Band Fits #12;Energy (GeV) -1 10 1 10 2 10 )-1 s-2 dN/dE(ergcm2 E -12 10

  14. Characterization of SiGe/Si multi-quantum wells for infrared sensing

    SciTech Connect (OSTI)

    Moeen, M.; Salemi, A.; Östling, M.; Radamson, H. H., E-mail: rad@kth.se [School of Information and Communication Technology, KTH Royal Institute of Technology, Stockholm, 16640 Kista (Sweden); Kolahdouz, M. [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)] [School of Electrical and Computer Engineering, University of Tehran, Tehran (Iran, Islamic Republic of)

    2013-12-16

    SiGe epitaxial layers are integrated as an active part in thermal detectors. To improve their performance, deeper understanding of design parameters, such as thickness, well periodicity, quality, and strain amount, of the layers/interfaces is required. Oxygen (2–2500?×?10{sup ?9}?Torr) was exposed prior or during epitaxy of SiGe/Si multilayers. In this range, samples with 10?nTorr oxygen were processed to investigate layer quality and noise measurements. Temperature coefficient of resistance was also measured to evaluate the thermal response. These results demonstrate sensitivity of SiGe-based devices to size and location of defects in the structure.

  15. Roles of Oxygen and Water Vapor in the Oxidation of Halogen Terminated Ge(111) Surfaces

    SciTech Connect (OSTI)

    Sun, Shiyu; /Stanford U., Phys. Dept.; Sun, Yun; Liu, Zhi; Lee, Dong-Ick; Pianette, Piero; /SLAC, SSRL

    2006-12-18

    The initial stage of the oxidation of Cl and Br terminated Ge(111) surfaces is studied using photoelectron spectroscopy. The authors perform controlled experiments to differentiate the effects of different factors in oxidation, and find that water vapor and oxygen play different roles. Water vapor effectively replaces the halogen termination layers with the hydroxyl group, but does not oxidize the surfaces further. In contrast, little oxidation is observed for Cl and Br terminated surfaces with dry oxygen alone. However, with the help of water vapor, oxygen oxidizes the surface by breaking the Ge-Ge back bonds instead of changing the termination layer.

  16. Early Commissioning Experience and Future Plans for the 12 GeV Continuous Electron Beam Accelerator Facility

    SciTech Connect (OSTI)

    Spata, Michael F.

    2014-12-01

    Jefferson Lab has recently completed the accelerator portion of the 12 GeV Upgrade for the Continuous Electron Beam Accelerator Facility. All 52 SRF cryomodules have been commissioned and operated with beam. The initial beam transport goals of demonstrating 2.2 GeV per pass, greater than 6 GeV in 3 passes to an existing experimental facility and greater than 10 GeV in 5-1/2 passes have all been accomplished. These results along with future plans to commission the remaining beamlines and to increase the performance of the accelerator to achieve reliable, robust and efficient operations at 12 GeV are presented.

  17. Photoproduction of eta mesons off protons for photon energies from 0.75 GeV to 3 GeV

    E-Print Network [OSTI]

    Volker Crede; Olivia Bartholomy; for the CB-ELSA Collaboration

    2004-10-20

    Total and differential cross sections for the reaction p(gamma, eta)p have been measured for photon energies in the range from 750 MeV to 3 GeV. The low-energy data are dominated by the S11 wave which has two poles in the energy region below 2 GeV. Eleven nucleon resonances are observed in their decay into p eta. At medium energies we find evidence for a new resonance N(2070)D15 with (mass, width) = (2068+-22, 295+-40) MeV. At photon energies above 1.5 GeV, a strong peak in forward direction develops, signalling the exchange of vector mesons in the t channel.

  18. Investigation of high temperature gaseous species by Knudsen cell mass spectrometry above the condensed systems Au-Ge-Cu and Au-Si / by Joseph Edward Kingcade 

    E-Print Network [OSTI]

    Kingcade, Joseph Edward

    1978-01-01

    '. ;A2) i Relative Intensity Nultiplier Gain Correction Factor E Au i Calibration Constant atm/A-K Au + Au 2 Cu + Cu~ Ge+ Ce 2. Ge3 Ge4 AuCu CuGe CuGe2 AuGe ' Au2 Ge + AuGe2 8. 7 + 0. 6 n, d, n. d. n. d. n. d. 10. 1 + 0. 6 n... Appearance Potential ( eV ) Ionization Cross Sections 0 i Pelative Intensity Multiplier Gain Correction Factor +1/g' E Au i Calibration Constant atm/A-K Au2Ge2 + AuGe3" AuGe4 n. d. n. d. n. d 17. 34 17. 23 21. 52 1. 19 l. 28 l. 28 l...

  19. Effects of boron dopants of Si (001) substrates on formation of Ge layers by sputter epitaxy method

    SciTech Connect (OSTI)

    Tsukamoto, Takahiro; Suda, Yoshiyuki [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan)] [Graduate School of Engineering, Tokyo University of Agriculture and Technology, 2-24-16 Naka-cho, Koganei, Tokyo 184-8588 (Japan); Hirose, Nobumitsu; Kasamatsu, Akifumi; Mimura, Takashi; Matsui, Toshiaki [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)] [National Institute of Information and Communications Technology, 4-2-1 Nukui-Kitamachi, Koganei, Tokyo 184-8795 (Japan)

    2013-10-21

    The formation of Ge layers on boron-doped Si (001) substrates by our sputter epitaxy method has been investigated. The surface morphology of Ge layers grown on Si substrates depends on the substrate resistance, and flat Ge layers are obtained on Si substrates with 0.015 ? cm resistivity. Highly boron-doped Si substrates cause a transition in the dislocation structure from complex dislocations with 60° dislocation glide planes to 90° pure-edge dislocations, resulting in the formation of flat Ge layers. Furthermore, we have found that the surface morphology of the Ge layers improves with increasing Ge layer thickness. Ge atoms migrating on the deposited Ge layers tend to position themselves at the reactive sites, where the reactivity is related to the number of bonding contacts between the Ge atom and the surface. This modifies the surface morphology, resulting in a flatter surface. Boron dopants together with the sputter epitaxy method effectively suppress the growth of Ge islands and result in the formation of flat Ge layers.

  20. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    SciTech Connect (OSTI)

    Ziouche, K. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z. E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D.; Savelli, G.; Hauser, D.; Michon, P.-M.

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (?SIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of ?SIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in ?SIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.