Sample records for ge le lv

  1. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  2. Dualit & PerspectiveDualit & Perspective Dualit dans le Plan Projectif

    E-Print Network [OSTI]

    Dillies, Jimmy

    Dualité & PerspectiveDualité & Perspective Dualité dans le Plan Projectif Jimmy Dillies Collège le

  3. !"#$%&%$#'#()"*)+*,")-./0(1'#$*2$$34'56*'7*8%)395$3*4:*;)3$07 ?9#@)%A7BC*DE*FE*/$77G*=E*HE*8)##$%G*>E.IE*J@'"KG*LE.8E*M0'"5@$#G*,E*/@'0(#'G*DE*/)01'"G*FE*?E

    E-Print Network [OSTI]

    Randall, David A.

    *DE*FE*/$77G*=E*HE*8)##$%G*>E.IE*J@'"KG*LE.8E*M0'"5@$#G*,E*/@'0(#'G*DE*/)01'"G*FE*?E F'N0(5@G*?E*FE*F$0*=$"()G*OE*F:1"(6)PG*OE*='0("G*FE*L$%%$##G*QE*R$9&G*?E*?E*H'5(7G*IE*H$*S%$9#G TE.JE*H('"KG*LE.2E*>'@+)9+G*ME*LE*>5?P'"$:G*OE*8E*>$0$7@6)G*LE*2E*ME*>(#5@$00G*LE.LE >)%5%$##$G*8E*>E*U)%%(7G*FE*?E*D'"3'00G*HE*D(697G

  4. Assessment of the LV-S2 & LV-S3 Stack Sampling Probe Locations for Compliance with ANSI/HPS N13.1-1999

    SciTech Connect (OSTI)

    Glissmeyer, John A.; Antonio, Ernest J.; Flaherty, Julia E.; Amidan, Brett G.

    2014-09-30T23:59:59.000Z

    This document reports on a series of tests conducted to assess the proposed air sampling locations for the Hanford Tank Waste Treatment and Immobilization Plant (WTP) Group 1-2A exhaust stacks with respect to the applicable criteria regarding the placement of an air sampling probe. The LV-C2, LV-S2, and LV-S3 exhaust stacks were tested together as a group (Test Group 1-2A). This report only covers the results of LV-S2 and LV-S3; LV-C2 will be reported on separately. Federal regulations1 require that a sampling probe be located in the exhaust stack according to the criteria established by the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-1999, Sampling and Monitoring Releases of Airborne Radioactive Substances from the Stack and Ducts of Nuclear Facilities. 2 These criteria address the capability of the sampling probe to extract a sample that represents the effluent stream.

  5. Microsoft Word - A10LV007 FINAL REPORT 03-08-11 Rick's changes...

    Energy Savers [EERE]

    Energy Memorandum DATE: March 8, 2011 Audit Report Number: OAS-L-11-03 REPLY TO ATTN OF: IG-32 (A10LV007) SUBJECT: Report on "Audit of National Security Technologies, LLC Internal...

  6. Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed Generator Units with

    E-Print Network [OSTI]

    Chaudhary, Sanjay

    Power Flow Analysis Algorithm for Islanded LV Microgrids Including Distributed Generator Units With larger portion of growing electricity demand which is being fed through distributed generation (DG power system. Being able to operate in both grid-connected and islanded mode, a microgrid manages

  7. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  8. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    High-electron-mobility Si/SiGe heterostructures: influenceof the relaxed SiGe buffer layer," Semiconductor Science andFrom its discovery to SiGe devices," Materials Science in

  9. Paris, le 14 fvrier 2013 Valid en sance du CCHSCT du 13/02/13

    E-Print Network [OSTI]

    Pouyanne, Nicolas

    : Jean-François KIEFFER titulaire 1 siège Anthony PECQUEUX suppléant UNSA Recherche : Christine MOUFFLE les organisations syndicales pour traiter ce dossier. M. Inglebert rappelle que le courrier suivant

  10. On the stabilization of A-15 Nb3Ge with high Tc's F. Weiss, O. Demolliens, R. Madar, J. P. Senateur and R. Fruchart

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1137 On the stabilization of A-15 Nb3Ge with high Tc's F. Weiss, O. Demolliens, R. Madar, J. P (Reçu le 21 novembre 1983, accepté le 12 mars 1984) Résumé. 2014 Le composé supraconducteur Nb3Ge de hypothèse selon laquelle le composé Nb3Ge st0153chiométrique de température critique élevée est stabilisé

  11. Le stage international et interculturel

    E-Print Network [OSTI]

    Laval, Universit

    femme Le rle de l'infirmier /la perception Les normes et les routines de soins Le soulagement de

  12. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311 CE 318 CE 319 CE 317 CE 316CE 327 CE 321 Sr Sci elect#CE 329 CE 328 GE 300# Eng/Sr Sci Elec# CE Elec

  13. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHECHE 413 Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470

  14. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470^ Chemical

  15. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313 ME 316 ME 352ME 330 GE 348# ME 328 ME 327 ME 323 ME 321ME 324 RCM 300# ME 418 ME 417 ME 450 ME 431

  16. MICRoPOLIS-LaCitdesInsectes.127s0sAINT-L0Ns-Et{-Lv AVYRON.FRANCE

    E-Print Network [OSTI]

    Rasmont, Pierre

    mêmes cas: la rythine de Steller, le thylacine, le dodo, le pic à bec d'ivoire, le pigeon migrateur, le conjointement étendre leur distribution vers le nord d'autant. Comme il y a un fort gradient de diversité d'espèce du nord au sud, ce processus de réchauffement pourrait écarter de nos pays un petit nombre d

  17. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE 4G Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  18. GE Healthcare Introduction

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare Introduction HR 16 columns are designed for high resolution liquid chromatography your local GE Healthcare office. System compatibility HR 16 columns are designed to be used with KTATM. Wash the parts thoroughly in distilled water. 4. Reassemble the column (see Assembling the column above

  19. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology...

  20. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide and MethaneLocations GE

  1. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell is theOpportunitiesTheGAOHome >About GE

  2. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFunding OpportunityF G F ! ( ! ( ! ( !ProgressGE

  3. LE BULLETIN DE L'EPI N 38 LE CRABE LOGO LE CRABE LOGO

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    87 LE BULLETIN DE L'EPI N 38 LE CRABE LOGO LE CRABE LOGO Maurice MAZALTO, Maxime WACK Didier, Ali fabrication du crabe Logo, avec une quipe d'enseignants des deux tablissements ; enseignants de disciplines ? En 1981 apparat en France la premire publication sur le vhicule programmable : dnomm tortue logo

  4. Hadronic production of J/[psi] at large [chi][sub F] in 800 GeV p+Cu and p+Be collisions

    SciTech Connect (OSTI)

    Kowitt, M.S.

    1992-12-01T23:59:59.000Z

    The differential cross-section d[sigma]/dx[sub F] for J/[psi] production in 800 GeV proton-nucleus collisions has been measured in the kinematic range 0.30 [le] x[sub F] [le] 0.95 and x[sub F] [lt] p[perpendicular] [lt] 5 GeV through the decay mode J/[psi] [yields] [mu][sup +][mu][sup [minus

  5. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  6. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm Confocal Optics 50, 100, 200 m 5 IQTL DNA DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor m 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  7. agir au Sud avec le Sud et

    E-Print Network [OSTI]

    'appui, jusqu'ici certifis individuellement selon le rfrentiel ISO 9001, ont amorc, dans le cadre de la

  8. Le laser : une brve introduction

    E-Print Network [OSTI]

    van Tiggelen, Bart

    Le laser : une brve introduction Christian Chardonnet Directeur du Laboratoire Charles Fabry (CNRS Lasers (CNRS/Universit Paris 13) Le 9 avril 2010 #12;Les sources de lumire l'ampoule lectrique Les;Zoom : x1000 x1000 x1000 x1000 x100 Le spectre du soleil I.R. U.V. Comparaison du rayonnement laser et

  9. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping these techniques in humans. Previous human studies (4-6) instead used the conventional GE BOLD technique, combined and limitations of GE BOLD differential mapping as compared to HSE BOLD differential mapping of ocular dominance

  10. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13T23:59:59.000Z

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  11. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 m thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  12. GE Wins Manufacturing Leadership Award |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    secured software platform that delivers data and visualizations to all major artificial lift functions at GE Oil & Gas. Several analytic modules were built to extract meaningful...

  13. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Academia Partner on Microgrid Project GE Awarded a 1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events...

  14. GE, Aavid Commercialize Dual Cool Jets Technology | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    market. GE's broad array of industrial businesses requires highly advanced and reliable electronics that are increasingly driving the need for advanced cooling solutions to...

  15. GE, University of Washington Disease Detection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    excited about this team's unique ability to combine new designs for paper-based microfluidics with new nucleic amplification methods and GE's novel paper chemistries to help...

  16. The GE Store

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our InstagramStructureProposedPAGESafetyTed5,AuditThe FiveBiofuelsGE Store for

  17. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  18. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    temperature," said Frank Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. Developed over the past decade, these new magnetocaloric...

  19. Serial and parallel Si, Ge, and SiGe direct-write with scanning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting...

  20. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316

  1. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316 Grp

  2. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  3. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on

  4. GE, Berkeley Energy Storage for Electric Vehicles | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Just Add Water: GE, Berkeley Lab Explore Possible Key to Energy Storage for Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  5. Cold Spray and GE Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    difference of the work done at GE Global Research is the development of cold spray for additive manufacturing, where we adapt this novel coating process to build 3D shapes....

  6. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  7. Joining GE Global Research Thermal Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alps. With more than 16 years working as an aerospace engineer in the development of gas turbine jet engines, I had GE on my radar screen right from the beginning when I was...

  8. Uniaxially stressed Ge:Ga and Ge:Be

    SciTech Connect (OSTI)

    Dubon, O.D. Jr.

    1992-12-01T23:59:59.000Z

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  9. Large-angle production of charged pions by 3 GeV/c - 12 GeV/c protons on carbon, copper and tin targets

    E-Print Network [OSTI]

    HARP Collaboration

    2007-09-21T23:59:59.000Z

    A measurement of the double-differential $\\pi^{\\pm}$ production cross-section in proton--carbon, proton--copper and proton--tin collisions in the range of pion momentum $100 \\MeVc \\leq p < 800 \\MeVc$ and angle $0.35 \\rad \\le \\theta <2.15 \\rad$ is presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was done using a small-radius cylindrical time projection chamber (TPC) placed in a solenoidal magnet. An elaborate system of detectors in the beam line ensured the identification of the incident particles. Results are shown for the double-differential cross-sections at four incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc and 12 \\GeVc).

  10. Le barbare : une nouvelle catgorie stratgique ?

    E-Print Network [OSTI]

    Boyer, Edmond

    diplomate et le guerrier... Lambassadeur et le soldat vivent et symbolisent les relations internationales1 . Ces figures du soldat et du diplomate si chères à Aron afin de penser la conduite diplomatico barbare. Contre lui, le soldat ne peut pas vraiment se battre de manière frontale. Avec lui, le diplomate

  11. Actualits sur le traitement hormonal substitutif-

    E-Print Network [OSTI]

    Boyer, Edmond

    Vaquez, la thrombocytmie essentielle, la splnomgalie mylode ou mylofi- brose primitive, le syndrome

  12. Jules Verne LE SPHINX DES GLACES

    E-Print Network [OSTI]

    Har?El, Zvi

    'îlot Bennet ........................................................225 Chapitre XVI L'île Tsalal

  13. Congrs AFC Tunis 2006 LE COMPORTEMENT SOCIALEMENT

    E-Print Network [OSTI]

    Boyer, Edmond

    lagenda 21. Quelques annes plus tard, Les Nations Unies ont lanc le Global Compact, initiative destine

  14. LE COMPORTEMENT SOCIALEMENT RESPONSABLE DES ENTREPRISES : UNE

    E-Print Network [OSTI]

    Boyer, Edmond

    annes plus tard, Les Nations Unies ont lanc le Global Compact, initiative destine aux entreprises et

  15. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  16. Le projet PLACO Jacquelin Charbonnel

    E-Print Network [OSTI]

    van Tiggelen, Bart

    depart Plate-forme en Ligne pour les Mathematiques (PLM) mise en place par le reseau Mathrice/10/01 3 / 14 #12;Point de depart Plate-forme en Ligne pour les Mathematiques (PLM) mise en place par le;Services de la PLM noms de domaine listes de diffusion agenda partags disque rseau VPN annuaire de la

  17. Le LHC, un tunnel cosmique

    ScienceCinema (OSTI)

    None

    2011-10-06T23:59:59.000Z

    Et si la lumire au bout du tunnel du LHC tait cosmique ? En d?autres termes, qu?est-ce que le LHC peut nous apporter dans la connaissance de l?Univers ? Car la monte en nergie des acclrateurs de particules nous permet de mieux apprhender l?univers primordial, chaud et dense. Mais dans quel sens dit-on que le LHC reproduit des conditions proches du Big bang ? Quelles informations nous apporte-t-il sur le contenu de l?Univers ? La matire noire est-elle dtectable au LHC ? L?nergie noire ? Pourquoi l?antimatire accumule au CERN est-elle si rare dans l?Univers ? Et si le CERN a bti sa rputation sur l?exploration des forces faibles et fortes qui oprent au sein des atomes et de leurs noyaux, est-ce que le LHC peut nous apporter des informations sur la force gravitationnelle qui gouverne l?volution cosmique ? Depuis une trentaine d?annes, notre comprhension de l?univers dans ses plus grandes dimensions et l?apprhension de son comportement aux plus petites distances sont intimement lies : en quoi le LHC va-t-il tester exprimentalement cette vision unifie ? Tout public, entre libre / Rservations au +41 (0)22 767 76 76

  18. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of SiGe intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  19. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  20. . 370. JOSEF PROKS ET JAROMIR GROH. -LE GOUT DFECTUEUX LE GOUT DFECTUEUX (GOUT HUILEUX-RANCI,

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    . 370. JOSEF PROKS ET JAROMIR GROH. - LE GOUT D?FECTUEUX LE GOUT D?FECTUEUX (GOUT HUILEUX-RANCI, SU

  1. Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1,

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1, * Sucismita Chutia,1 Charles an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting interface, with characteristic energy splittings of order 0.11 meV for the case of SiGe/Si/SiGe quantum

  2. Tribal Leader Energy Education Initiative Workshop - Tracey LeBeau...

    Energy Savers [EERE]

    Workshop - Tracey LeBeau's Welcome Letter Tribal Leader Energy Education Initiative Workshop - Tracey LeBeau's Welcome Letter Tracey LeBeauWelcomeLetter.pdf More Documents &...

  3. Transverse-momentum dependent modification of dynamic texture in central Au+Au collisions at sqrt(sNN) = 200 GeV

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; Kutuev, R.Kh.; et al.

    2005-01-10T23:59:59.000Z

    Correlations in the hadron distributions produced in relativistic Au+Au collisions are studied in the discrete wavelet expansion method. The analysis is performed in the space of pseudorapidity (|{eta}| {le} 1) and azimuth (full 2{pi}) in bins of transverse momentum (p{sub t}) from 0.14 {le} p{sub t} {le} 2.1 GeV/c. In peripheral Au+Au collisions a correlation structure ascribed to minijet fragmentation is observed. It evolves with collision centrality and p{sub t} in a way not seen before which suggests strong dissipation of minijet fragmentation in the longitudinally-expanding medium.

  4. Rolling up SiGe on insulator

    SciTech Connect (OSTI)

    Cavallo, F.; Songmuang, R.; Ulrich, C.; Schmidt, O. G. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2007-05-07T23:59:59.000Z

    SiGe on insulator films of 10-50 nm thickness are fabricated by Ge condensation applying different oxidation times. The layers are released from the substrate by selectively etching the insulator film. Due to the varying Ge composition, the layers bend downward toward the substrate surface and roll up into microtubes. Depending on the Ge condensation, the strain distribution in the SiGe layers varies and allows a scaling of the tube diameters between 1 and 4 {mu}m. Assuming pseudomorphic SiGe layers, the tube diameters are smaller than expected from continuum mechanical theory. This suggests the occurrence of additional strain in the oxidized films.

  5. Minh Le | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data CenterEnergyGlossary ofHomeJC3Minh Le About Us Minh Le - Director,

  6. LE JOURNAL DE PHYSIQUE LA CONDUCTION LECTRIQUE

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    LE JOURNAL DE PHYSIQUE ET LE RADIUM LA CONDUCTION LECTRIQUE DES HYDROCARBURES LIQUIDES EN COUCHES hydrocarbures liquides en couches minces, signal dans un prcdent mmoire. Les expriences, faites dans des

  7. LV8115 2..5

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5 - -/e),,s - 16,3/14 LOWRelated LinksCore

  8. LE TOURISME DANS LES OASIS D'ALGERIE LE TOURISME SCIENTIFIQUE A TRAVERS LES CRATERES

    E-Print Network [OSTI]

    Boyer, Edmond

    1 LE TOURISME DANS LES OASIS D'ALGERIE LE TOURISME SCIENTIFIQUE A TRAVERS LES CRATERES, historiques, architecturaux, exotiques et autres. Les Oasis, en tant que zones singulires qui tranchent avec'excellence pour un tourisme particulier : le tourisme oasien. Les Oasis parsment le dsert saharien en Algrie

  9. Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

    SciTech Connect (OSTI)

    Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu. [A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Mironov, O. A. [Warwick SEMINANO R and D Centre, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Kaenel, H. von [Laboratorium fuer Festkoerperphysik ETH Zuerich, CH-8093 Zuerich (Switzerland); EpiSpeed SA, Technoparkstrasse 1, CH-8005 Zuerich (Switzerland)

    2009-11-01T23:59:59.000Z

    Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

  10. LE CONTRLE DE GESTION LOGISTIQUE HOSPITALIER

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    , approvisionnement, transport, courrier, etc. Des rformes du management hospitalier franais ont introduit une hospitalire dans le management des tablissements hospitaliers, la forme qu'exerce le contrle de gestion1 LE CONTRLE DE GESTION LOGISTIQUE HOSPITALIER Nicolas PETIT, doctorant l'IGR-IAE de l

  11. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  12. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11T23:59:59.000Z

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  13. Hadronization geometry and charge-dependent two-particlecorrelation on momentum subspace (eta, phi) in Au-Au collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson,B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski,J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar,A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de laBarca Sanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopdhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; De Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip,P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Guiterrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry,T.W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann,G.W.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones,P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrv,V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, S.M.; Kotchenda, L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; Kulikov,A.I.; et al.

    2004-09-23T23:59:59.000Z

    We present the first measurements of charge-dependent two-particle correlations on momentum-space difference variables {eta}{sub 1}-{eta}{sub 2} (pseudorapidity) and {phi}{sub 1}-{phi}{sub 2} (azimuth) for primary charged hadrons with transverse momentum 0.15 {le} p{sub t} {le} 2 GeV/c and |{eta}| {le} 1.3 from Au-Au collisions at {radical}s{sub NN} = 130 GeV. We observe correlation structures not predicted by theory but consistent with evolution of hadron emission geometry with increasing centrality from one-dimensional fragmentation of color strings to higher-dimensional fragmentation of a hadron-opaque bulk medium.

  14. SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication Zhiyuan Cheng, E. A. Fitzgerald, and D with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe

  15. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMForms About Become agovEducationWelcome toAboutAbout GE Global Research

  16. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cn SunnybankD.jpgHanfordDepartment ofHeat Transfer in GE Jet Engines Click to

  17. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15T23:59:59.000Z

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  18. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWP TWP Related LinksATHENAAdministrative80-AA (01-2015)GE

  19. Madame, Monsieur, Chres Amies, Chers Amis, Le Fonds pour la Recherche Mdicale dans le Hainaut (FRMH) organise, comme chaque anne, une

    E-Print Network [OSTI]

    Dupont, Stphane

    Conservatoire royal de Mons, le clarinettiste Ronald Van Spaendonck et le pianiste Johan Schmidt (Laurat du

  20. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enables Advanced Thermal Imaging An error occurred. Unable to execute Javascript. Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo...

  1. LE SYSTEME PHONOLOGIQUE DU PUREPECHA Claudine Chamoreau

    E-Print Network [OSTI]

    Boyer, Edmond

    langues : «les langues n'évoluent pas dans des tours d'ivoire » dit justement Martinet3 (p. 89 nombreuses situations de communication sur la langue vernaculaire. Langue parlée au Mexique, au nord-ouest de que le nombre d'enfants est moindre dans les foyers où le purepecha est parlé. Tel n'est pas le cas

  2. Limited-area growth of Ge and SiGe on Si

    E-Print Network [OSTI]

    Kim, Meekyung, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low ...

  3. SiGe/sSi quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Witzel, Wayne M; Carroll, Malcolm S

    2011-01-01T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/sSi quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  4. SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Wayne M. Witzel; Rajib Rahman; Malcolm S. Carroll

    2012-05-14T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  5. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  6. Genetic-Algorithm Discovery of a Direct-Gap and Optically Allowed Superstructure from Indirect-Gap Si and Ge Semiconductors

    SciTech Connect (OSTI)

    d'Avezac, M.; Luo, J. W.; Chanier, T.; Zunger, A.

    2012-01-13T23:59:59.000Z

    Combining two indirect-gap materials - with different electronic and optical gaps - to create a direct gap material represents an ongoing theoretical challenge with potentially rewarding practical implications, such as optoelectronics integration on a single wafer. We provide an unexpected solution to this classic problem, by spatially melding two indirect-gap materials (Si and Ge) into one strongly dipole-allowed direct-gap material. We leverage a combination of genetic algorithms with a pseudopotential Hamiltonian to search through the astronomic number of variants of Si{sub n}/Ge{sub m}/.../Si{sub p}/Ge{sub q} superstructures grown on (001) Si{sub 1-x}Ge{sub x}. The search reveals a robust configurational motif - SiGe{sub 2}Si{sub 2}Ge{sub 2}SiGe{sub n} on (001) Si{sub x}Ge{sub 1-x} substrate (x {le} 0.4) presenting a direct and dipole-allowed gap resulting from an enhanced {Gamma}-X coupling at the band edges.

  7. LETTRES A LA RDACTION LE JOURNAL DE PHYSIQUE ET LE RADIUM. TOME 15, OCTOBRE 1954,

    E-Print Network [OSTI]

    Boyer, Edmond

    charges ioniques dans le domaine des faibles nergies. On propose une relation de la forme La constante C

  8. Le logiciel "Tigre" en formation PLC 1 Grtice J. Vincent Le logiciel Tigre en formation PLC

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    "Tigre" en formation PLC 1 Grétice J. Vincent Le logiciel « Tigre » en formation PLC J. Vincent Le;______________________________________________________________________________________ Le logiciel "Tigre" en formation PLC 2 Grétice J. Vincent 1.1. La lecture Voici l'écran d;______________________________________________________________________________________ Le logiciel "Tigre" en formation PLC 3 Grétice J. Vincent Figure 3 1.2. La démonstration Voici l

  9. JOURNEE MONDIALE DE LUTTE CONTRE LE SIDA 2014 LE PROGRAMME BREST

    E-Print Network [OSTI]

    Brest, Universit de

    ludique sexe et chocolat . - Sur le temps de midi, les infirmiers du SUMPPS de l'UBO et les tudiants

  10. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

    E-Print Network [OSTI]

    Chlirigh, C. Ni

    The hole mobility characteristics of ?110? /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied.

  11. -Le_rachat_2005-06-14.doc Le rachat des Corses esclaves Tunis en 1779

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 / 19 - Le_rachat_2005-06-14.doc Le rachat des Corses esclaves à Tunis en 1779 L'établissement de), voir la bibliographie halshs-00162606,version1-14Jul2007 #12;2 / 19 - Le_rachat_2005-06-14.doc Esclaves

  12. Tecnologie ICT per le Smart City Prof. R. Laurini Tecnologie ICT per le Smart City

    E-Print Network [OSTI]

    Laurini, Robert

    Tecnologie ICT per le Smart City Prof. R. Laurini 1 Tecnologie ICT per le Smart City 1 Le smart-fertilization tra ICT e Smart City 4 Problemi emergenti 5 Conclusioni Definizione di Carlo Ratti (MIT) Una, efficiente, aperta, collaborativa, creativa, digitale e green European Smart Cities Volendo essere

  13. thorium en quilibre radioactif. Le thorium X donne le parcours 5 cm. 7, et l'manation du thorium, pour

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    181 thorium en quilibre radioactif. Le thorium X donne le parcours 5 cm. 7, et l'manation du thorium, pour laquelle on a t oblig d'employer une mthode de scintillations, le parcours 5,5 cm. Les parcours des rayions a mis par le thorium et ses produits sont ru- nis dans le tableau ci-contre, ou l

  14. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31T23:59:59.000Z

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances DR-enabled appliances to provide benefits to the utility grid.

  15. Le Wadi Kharrar Lieu du baptme de Jsus de Nazareth ?

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Le Wadi Kharrar Lieu du baptme de Jsus de Nazareth ? Par Wulfran Barthlemy Ingnieur d un ruisseau coulant d'est en ouest depuis le plateau jordanien : le Wadi Kharrar. Contrastant avec

  16. Relaxed SiGe Layers with High Ge Content by Compliant Substrates , R.L. Peterson1

    E-Print Network [OSTI]

    Relaxed SiGe Layers with High Ge Content by Compliant Substrates H. Yin1 , R.L. Peterson1 , K, high Ge content SiGe layers have been realized using stress balance on a compliant under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films

  17. Le Nigeria sous Obasanjo. Violences et dmocratie

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    #12;5 LE DOSSIER Le Nigeria sous Obasanjo. Violences et dmocratie Coordonn par Laurent Fourchard Nigeria Au Nigeria, de nombreux journalistes et chercheurs ont associ la rmer- gence de conflits'au Nigeria il soit peine plus ais de compter les morts que de recenser les vivants2. La comparaison 1. Je

  18. DIPARTIMENTO DI LINGUE PER LE POLITICHE PUBBLICHE

    E-Print Network [OSTI]

    Guidoni, Leonardo

    25 febbraio 2010; si rende noto che il Dipartimento di Lingue per le Politiche Pubbliche intende interlinguistica e plain English COMPETENZE E REQUISITI DEL PRESTATORE DEL PRESTATORE: Diploma di Laurea di vecchio collaborazione avrà la durata di mesi 4 (quattro) e si svolgerà presso il Dipartimento di Lingue per le Politiche

  19. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Zhengping Jiang; Neerav Kharche; Timothy Boykin; Gerhard Klimeck

    2012-03-06T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  20. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Jiang, Zhengping; Boykin, Timothy; Klimeck, Gerhard

    2011-01-01T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  1. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  2. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01T23:59:59.000Z

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (Ge ...

  3. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01T23:59:59.000Z

    Is there a risk from not using GE animals? James D. Murray rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  4. Germanium: From Its Discovery to SiGe Devices

    E-Print Network [OSTI]

    Haller, E.E.

    2006-01-01T23:59:59.000Z

    From Its Discovery to SiGe Devices E.E. Haller Department ofrapidly rising interest in SiGe alloys, we are just startingstrained and unstrained SiGe multilayer structures [58]. 9.

  5. Scaling of SiGe Heterojunction Bipolar Transistors

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    Scaling of SiGe Heterojunction Bipolar Transistors JAE-SUNG RIEH, SENIOR MEMBER, IEEE, DAVID-century. This paper inves- tigates the impacts of scaling on SiGe heterojunction bipolar tran- sistors (HBTs), which), epitaxial-base Si BJTs (Epi Si BJT), SiGe HBTs (SiGe HBT), and SiGe HBTs with carbon-doped base (SiGeC HBT

  6. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19T23:59:59.000Z

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  7. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4022

    E-Print Network [OSTI]

    Di Girolami, Cristina

    MESSIAEN 72000 - LE MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE

  8. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4021

    E-Print Network [OSTI]

    Di Girolami, Cristina

    OLIVIER MESSIAEN 72000 - LE MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX

  9. UNIVERSITE DU MANS Rfrence GALAXIE : 4018 Numro dans le SI local : 352

    E-Print Network [OSTI]

    Di Girolami, Cristina

    MESSIAEN 72000 - LE MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE

  10. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4020

    E-Print Network [OSTI]

    Di Girolami, Cristina

    MESSIAEN 72000 - LE MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE

  11. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03T23:59:59.000Z

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  12. Engineer Receives UMass "Salute To Service" Award | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    November 22, 2013 - GE Global Research, the technology development arm of the General Electric Company (NYSE: GE), is proud to announce that Dr. Marshall Jones, a world renowned...

  13. Crowdsourcing Wins Manufacturing Leadership 100 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NY, May 22, 2013 - GE Global Research, the technology development arm of the General Electric Co. (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership...

  14. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Unable to execute Javascript. Text Version The words...

  15. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research ...

  16. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  17. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15T23:59:59.000Z

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  18. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21T23:59:59.000Z

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  19. Minijet Deformation and Charge-independent Two-particleCorrelations on Momentum Subspace (eta,phi) In Au-Au Collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson,B.D.; Arkhipkin, D.; Averichev, G.S.; Badyal, S.K.; Bai, Y.; Balewski,J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bharadwaj, S.; Bhasin, A.; Bhati, A.K.; Bhatia, V.S; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth,C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la BarcaSanchez, M.; Carroll, J.; Castillo, J.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; de Moura, M.M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov, L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faivre, J.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip,P.; Finch, E.; Fine, V.; Fisyak, Y.; Foley, K.J.; Fomenko, K.; Fu, J.; Gagliardi, C.A.; Gans, J.; Ganti, M.S.; Gaudichet, L.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guo, Y.; Gupta, A.; Gutierrez, T.D.; Hallman, T.J.; Hamed, A.; Hardtke, D.; Harris, J.W.; Heinz, M.; Henry,T.W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann,G.W.; Horsley, M.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kaplan, M.; Keane, D.; Khodyrev, V.Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klay, J.; Klein,S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Kopytine, M.; Kotchenda,L.; Kramer, M.; Kravtsov, P.; Kravtsov, V.I.; Krueger, K.; Kuhn, C.; et al.

    2004-11-04T23:59:59.000Z

    We present first measurements of charge-independent correlations on momentum-space difference variables {eta}{sub 1}-{eta}{sub 2} (pseudorapidity) and {phi}{sub 1}-{phi}{sub 2} (azimuth) for charged primary hadrons with transverse momentum within 0.15 {le} p{sub t} {le} 2 GeV/c and |{eta}| {le} 1.3 from Au-Au collisions at {radical}s{sub NN} = 130 GeV. We observe strong charge-independent correlations associated with minijets and elliptic flow. The width of the minijet peak on {eta}{sub 1}-{eta}{sub 2} increases by a factor 2.3 from peripheral to central collisions, suggesting strong coupling of partons to a longitudinally-expanding colored medium. New methods of jet analysis introduced here reveal nonperturbative medium effects in heavy ion collisions.

  20. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  1. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

  2. Event-by-event hexb pt hexb fluctuations in Au-Au collisions atsqrt(sNN) = 130 GeV

    SciTech Connect (OSTI)

    Adams, J.; Adler, C.; Aggarwal, M.M.; Ahammed, Z.; Amonett, J.; Anderson, B.D.; Anderson, M; Arkhipkin, D.; Averichev, G.S.; Badyal,S.K.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele,S.; Belaga, V.V.; Bellwied, R.; Berger, J.; Bezverkhny, B.I.; Bhardwaj,S.; Bhaskar, P.; Bhati, A.K.; Bichsel, H.; Billmeier, A.; Bland, L.C.; Blyth, C.O.; Bonner, B.E.; Botje, M.; Boucham, A.; Brandin, A.; Bravar,A.; Cadman, R.V.; Cai, X.Z.; Caines, H.; Calderon de la Barca Sanchez,M.; Carroll, J.; Castillo, J.; Castro, M.; Cebra, D.; Chaloupka, P.; Chattopadhyay, S.; Chen, H.F.; Chen, Y.; Chernenko, S.P.; Cherney, M.; Chikanian, A.; Choi, B.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cramer, J.G.; Crawford, H.J.; Das, D.; Das, S.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Dong, X.; Draper, J.E.; Du, F.; Dubey, A.K.; Dunin, V.B.; Dunlop, J.C.; Dutta Majumdar, M.R.; Eckardt, V.; Efimov,L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Faine, V.; Faivre, J.; Fatemi, R.; Filimonov, K.; Filip, P.; Finch, E.; Fisyak, Y.; Flierl, D.; Foley, K.J.; Fu, J.; Gagliardi, C.A.; Ganti, M.S.; Gutierrez, T.D.; Gagunashvili, N.; Gans, J.; Gaudichet, L.; Germain, M.; Geurts, F.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.E.; Grachov, O.; Grigoriev, V.; Cronstal, S.; Grosnick, D.; Guedon, M.; Guertin, S.M.; Gupta, A.; Gushin, E.; Hallman, T.J.; Hardtke, D.; Harris,J.W.; Heinz, M.; Henry, T.W.; Heppelmann, S.; Herston, T.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffmann, G.W.; Horsley, M.; Huang, H.Z.; Huang,S.L.; Humanic, T.J.; Igo, G.; Ishihara, A.; Jacobs, P.; Jacobs, W.W.; Janik, M.; Johnson, I.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kaneta, M.; Kaplan, M.; Keane, D.; Kiryluk, J.; Kisiel, A.; Klay, J.; Klein, S.R.; Klyachko, A.; Koetke, D.D.; Kollegger, T.; Konstantinov, A.S.; Kopytine,S.M.; Kotchenda, L.; Kovalenko, A.D.; Kramer, M.; Kravtsov, P.; Krueger,K.; Kuhn, C.; Kulikov, A.I.; Kumar, A.; et al.

    2003-09-02T23:59:59.000Z

    We present the first large-acceptance measurement of event-wise fluctuations in Au-Au collisions at {radical}s{sub NN} = 130 GeV. Significant nonstatistical fluctuations are observed. The measured fractional r.m.s. width excess of the event-wise distribution for the 15% most-central events for charged hadrons within |{eta}| < 1 and 0.15 {le} p{sub t} {le} 2 GeV/c is 13.7 {+-} 0.1(stat) {+-}1.3(syst)% relative to a statistical reference. The variation of charge-independent fluctuation excess with centrality is non-monotonic but smooth. Charge-dependent nonstatistical fluctuations are also observed.

  3. Hadronic production of J/{psi} at large {chi}{sub F} in 800 GeV p+Cu and p+Be collisions

    SciTech Connect (OSTI)

    Kowitt, M.S.

    1992-12-01T23:59:59.000Z

    The differential cross-section d{sigma}/dx{sub F} for J/{psi} production in 800 GeV proton-nucleus collisions has been measured in the kinematic range 0.30 {le} x{sub F} {le} 0.95 and x{sub F} {lt} p{perpendicular} {lt} 5 GeV through the decay mode J/{psi} {yields} {mu}{sup +}{mu}{sup {minus}}. The nuclear dependence of J/{psi} production over this range was measured using copper and beryllium targets. The differential cross sections are in good agreement with the predictions of the symbolical parton duality model. The data show no evidence for an intrinsic charm component in the proton. The ratio of the differential cross sections for copper and beryllium shows a suppression of J/{psi} production in copper which increases with increasing x{sub F}.

  4. Ce que le jour doit la nuit Vronique PERES

    E-Print Network [OSTI]

    Boyer, Edmond

    laisser distraire par la couleur (tableau de Magritte). Les contemporains de Rembrandt font triompher le

  5. Le rane delle risaie Osservazioni sugli Iperolidi del

    E-Print Network [OSTI]

    maschio. I sessi possono tuttavia di- stinguersi notevolmente per la colo- razione: le femmine hanno

  6. GE Unveils High-Tech Superhero GENIUS MAN | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    education Committed to inspiring the next generation of scientists and engineers Infused with an array of superpowers inspired by GE technologies Super Vision, ability to...

  7. Vincent VLS Le service public touristique local

    E-Print Network [OSTI]

    Boyer, Edmond

    par les ?ditions de l'Harmattan sous le titre « Service public touristique : L'Harmattan, collection Logiques sociales, 220 p. VLES V., 2003. Aménagement

  8. LHC, le Big Bang en prouvette

    ScienceCinema (OSTI)

    None

    2011-10-06T23:59:59.000Z

    Notre comprhension de l?Univers est en train de changer? Bar des Sciences - Tout public Dbat modr par Marie-Odile Montchicourt, journaliste de France Info. Evenement en vidoconfrence entre le Globe de la science et de l?innovation, le bar le Baloard de Montpellier et la Maison des Mtallos Paris. Intervenants au CERN : Philippe Charpentier et Daniel Froideveaux, physiciens au CERN. Intervenants Paris : Vincent Bontemps, philosophe et chercheur au CEA ; Jacques Arnould, philosophe, historien des sciences et thologien, Jean-Jacques Beineix, ralisateur, producteur, scnariste de cinma. Intervenants Montpellier (LPTA) : Andr Neveu, physicien thoricien et directeur de recherche au CNRS ; Gilbert Moultaka, physicien thoricien et charg de recherche au CNRS. Partenariat : CERN, CEA, IN2P3, Universit MPL2 (LPTA) Dans le cadre de la Fte de la science 2008

  9. Le Guerrou DISS. ETH NO. 16533

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Erwan Le Guerrou 2006 DISS. ETH NO. 16533 Sedimentology & Chemostratigraphy of the Ediacaran Shuram Formation, Nafun Group, Oman tel-00331341,version1-16Oct2008 #12;DISS. ETH NO. 16533 Sedimentology

  10. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor Working at GE site at Tirat-Carmel. Start: immediately Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  11. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  12. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  13. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  14. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  15. High-germanium-content SiGe islands formed on compliant oxide by SiGe Haizhou Yina)

    E-Print Network [OSTI]

    High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation Haizhou Yina and the nonuniformity of the enhanced germanium content during the SiGe oxidation were improved by depositing a silicon was relaxed by lateral expansion of the SiGe islands, showing that dislocations were not required

  16. Antoine Fleury, 2009, Potsdamer Platz : l'envers du dcor , Le Mensuel de l'universit Potsdamer Platz : l'envers du dcor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , aujourd'hui occupé par des bureaux. Au nord-ouest de la place, un second projet est confié à Sony qui y installe son siège européen. Conçu par Helmut Jahn, le Sony Center est un ensemble de verre et d multinationales comme Daimler-Benz et Sony4 est emblématique d'un

  17. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Universit di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Kster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universitt, Renthof 5, 35032 Marburg (Germany)

    2013-12-04T23:59:59.000Z

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  18. Le cot de la sant publique : le cas des hpitaux militaires franais, XVIIe-XVIIIe sicles

    E-Print Network [OSTI]

    soldats trop gs ou trop mutils pour continuer le service, c'est partir du rgne de Louis XIV que s - la fois hpital et maison de retraite pour les anciens soldats -, puis d'en assurer le sant d'une arme permanente en expansion, dans des temps de guerre o la vie d'un soldat aguerri

  19. tude comparative de la digestion d'un aliment complet chez le poney et le lapin

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    tude comparative de la digestion d'un aliment complet chez le poney et le lapin R. WOLTER, F'Etoile, 69250 Charbonnires les Bains, France. Summary. Comparative digestibility ofa complete pelleted diet and rabbits. Total digestibilities, partial cumulative digestibilities in different compartments

  20. (D)crire la mine : le corps entre indicateur et ressource. Direction Rgionale des Affaires Culturelles de Franche-Comt

    E-Print Network [OSTI]

    Boyer, Edmond

    ainsi dessinées : le corps-soldat, le corps comme signe social, le corps éprouvant, le corps équipé

  1. Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si*

    E-Print Network [OSTI]

    Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe the sudden rise in threading dislocation density in Ge-rich relaxed graded SiGe layers grown at higher growth systems, including relaxed graded SiGe on Si substrates i.e., x Si1-xGex /Si ,1,2 InGaP on GaP substrates

  2. Measurements of the Electron-Helicity Dependent Cross Sections of Deeply Virtual Compton Scattering with CEBAF at 12 GeV

    SciTech Connect (OSTI)

    J. Roche; C. E. Hyde-Wright; B. Michel; C. Munoz Camacho; et al. (The Jefferson Lab Hall A Collaboration)

    2006-09-11T23:59:59.000Z

    We propose precision measurements of the helicity-dependent and helicity independent cross sections for the ep {yields} ep{gamma} reaction in Deeply Virtual Compton Scattering (DVCS) kinematics. DVCS scaling is obtained in the limits Q{sup 2} >> {Lambda}{sub QCD}{sup 2}, x{sub Bj} fixed, and -{Delta}{sup 2} = -(q-q{prime}){sup 2} << Q{sup 2}. We consider the specific kinematic range Q{sup 2} > 2 GeV{sup 2}, W > 2 GeV, and -{Delta}{sup 2} {le} 1 GeV{sup 2}. We will use our successful technique from the 5.75 GeV Hall A DVCS experiment (E00-110). With polarized 6.6, 8.8, and 11 GeV beams incident on the liquid hydrogen target, we will detect the scattered electron in the Hall A HRS-L spectrometer (maximum central momentum 4.3 GeV/c) and the emitted photon in a slightly expanded PbF{sub 2} calorimeter. In general, we will not detect the recoil proton. The H(e,e{prime}{gamma})X missing mass resolution is sufficient to isolate the exclusive channel with 3% systematic precision.

  3. The Nature of the Distinctive Microscopic Features in R5(SixGe1-x)4 Magnetic Refrigeration Materials

    SciTech Connect (OSTI)

    Ozan Ugurlu

    2006-05-01T23:59:59.000Z

    Magnetic refrigeration is a promising technology that offers a potential for high energy efficiency. The giant magnetocaloric effect of the R{sub 5}(Si{sub x}, Ge{sub 1-x}){sub 4} alloys (where R=rare-earth and O {le} x {le} 1), which was discovered in 1997, make them perfect candidates for magnetic refrigeration applications. In this study the microstructures of Gd{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} alloys have been characterized using electron microscopy techniques, with the focus being on distinctive linear features first examined in 1999. These linear features have been observed in R{sub 5}(Si{sub x}, Ge{sub 1-x}){sub 4} alloys prepared from different rare-earths (Gd, Tb, Dy and Er) with different crystal structures (Gd{sub 5}Si{sub 4}-type orthorhombic, monoclinic and Gd{sub 5}Ge{sub 4}-type orthorhombic). Systematic scanning electron microscope studies revealed that these linear features are actually thin-plates, which grow along specific directions in the matrix material. The crystal structure of the thin-plates has been determined as hexagonal with lattice parameters a=b=8.53 {angstrom} and c=6.40 {angstrom} using selected area diffraction (SAD). Energy dispersive spectroscopy analysis, carried out in both scanning and transmission electron microscopes, showed that the features have a composition approximating to R{sub 5}(Si{sub x},Ge{sub 1-x}){sub 3}.phase. Orientation relationship between the matrix and the thin-plates has been calculated as [- 1010](1-211){sub p}//[010](10-2){sub m}. The growth direction of the thin plates are calculated as (22 0 19) and (-22 0 19) by applying the Ag approach of Zhang and Purdy to the SAD patterns of this system. High Resolution TEM images of the Gd{sub 5}Ge{sub 4} were used to study the crystallographic relationship. A terrace-ledge structure was observed at the interface and a 7{sup o} rotation of the reciprocal lattices with respect to each other, consistent with the determined orientation relationship, was noted. Both observations are consistent with the stated hypothesis that the growth direction of the thin-plates is parallel to an invariant line direction. Based on the terrace-ledge structure of the thin-plate interface a displacive-diffusional growth mechanism has been proposed to explain the rapid formation of the R{sub 5}(Si{sub x},Ge{sub 1-x}){sub 3} plates.

  4. Magnetotransport in low-density p-Si/SiGe heterostructures : from metal through hopping insulator to Wigner glass.

    SciTech Connect (OSTI)

    Drichko, I. L.; Dyakonov, A. M.; Smirnov, I. Yu.; Suslov, A. V.; Galperin, Y. M.; Vinokur , V.; Myronov, M.; Mironov, O. A.; Leadley, D. R.; Materials Science Division; Russian Acadademy of Science; National High Magnetic Field Lab.; Univ. of Oslo; Musashi Inst. of Tech.; Univ.of Warwick

    2008-02-01T23:59:59.000Z

    We study dc and ac transport in low-density p-Si/SiGe heterostructures at low temperatures and in a broad domain of magnetic fields up to 18 T. Complex ac conductance is determined from simultaneous measurement of velocity and attenuation of a surface acoustic wave propagating in close vicinity of the two-dimensional hole layer. The observed behavior of dc and ac conductances is interpreted as an evolution from metallic conductance at B=0 through hopping between localized states in intermediate magnetic fields (close to the plateau of the integer quantum Hall effect corresponding to the Landau-level filling factor {nu}=1) to formation of the Wigner glass in the extreme quantum limit (B {ge} 14, T {le} 0.8 K).

  5. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Mller Gubler, E. [Electron Microscopy Center of ETH Zrich (EMEZ), August-Piccard-Hof 1, CH-8093 Zrich (Switzerland)

    2014-07-28T23:59:59.000Z

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3??10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the kp and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  6. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  7. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si1yGey, and Si/Ge

  8. Assessment of the Group 5-6 (LB C2, LB S2, LV S1) Stack Sampling Probe Locations for Compliance with ANSI/HPS N13.1 1999

    SciTech Connect (OSTI)

    Glissmeyer, John A.; Flaherty, Julia E.; Piepel, Gregory F.

    2011-03-11T23:59:59.000Z

    This document reports on a series of tests to assess the proposed air sampling locations for the Hanford Tank Waste Treatment and Immobilization Plant (WTP) Group 5-6 exhaust stacks with respect to the applicable criteria regarding the placement of an air sampling probe. The LB-C2, LV-S1, and LB S2 exhaust stacks were tested together as a group (Test Group 5-6) because the common factor in their design is that the last significant flow disturbance upstream of the air sampling probe is a reduction in duct diameter. Federal regulations( ) require that a sampling probe be located in the exhaust stack according to the criteria of the American National Standards Institute/Health Physics Society (ANSI/HPS) N13.1-1999, Sampling and Monitoring Releases of Airborne Radioactive Substances from the Stack and Ducts of Nuclear Facilities. These criteria address the capability of the sampling probe to extract a sample that represents the effluent stream. The testing on scale models of the stacks conducted for this project was part of the River Protection ProjectWaste Treatment Plant Support Program under Contract No. DE-AC05-76RL01830 according to the statement of work issued by Bechtel National Inc. (BNI, 24590-QL-SRA-W000-00101, N13.1-1999 Stack Monitor Scale Model Testing and Qualification, Revision 1, 9/12/2007) and Work Authorization 09 of Memorandum of Agreement 24590-QL-HC9-WA49-00001. The internal Pacific Northwest National Laboratory (PNNL) project for this task is 53024, Work for Hanford Contractors Stack Monitoring. The testing described in this document was further guided by the Test Plan Scale Model Testing the Waste Treatment Plant LB-C2, LB-S2, and LV-S1 (Test Group 5-6) Stack Air Sampling Positions (TP-RPP-WTP-594). The tests conducted by PNNL during 2009 and 2010 on the Group 5-6 scale model systems are described in this report. The series of tests consists of various measurements taken over a grid of points in the duct cross-section at the designed sampling probe locations and at five duct diameters up and downstream from the design location to accommodate potential construction variability. The tests were done only at the design sampling probe location on the scale model of LB-S2 because that ductwork was already constructed. The ANSI/HPS N13.1-1999 criteria and the corresponding results of the test series on the scale models are summarized in this report.

  9. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  10. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the H(p,n)He, H(d,n)He and H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmoreused to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.less

  11. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  12. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

  13. associes dans le: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  14. alpha dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  15. application dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  16. ancrees dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  17. analyse dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  18. ains dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  19. ans dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  20. aerosols dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  1. ambiant dans le: Topics by E-print Network

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    Physics Websites Summary: rsultent du temps employ charger le c ble. M. Siemens en conclut qu'il y a rellement une vitesse de'aug- menter le temps...

  2. avenir pour le: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    : France (2008)" 12;1 25 Boyer, Edmond 53 N d'ordre 1137 QUEL TOURISME POUR LE MAROC Physics Websites Summary: 1 Anne 2011 N d'ordre 1137 QUEL TOURISME POUR LE...

  3. PRESSIONS ET BUDGET: UNE ETUDE QUALITATIVE DANS LE SECTEUR

    E-Print Network [OSTI]

    Boyer, Edmond

    PRESSIONS ET BUDGET: UNE ETUDE QUALITATIVE DANS LE SECTEUR HOSPITALIER Rsum Le courant Reliance secteur hospitalier public. Mots cls : pression budgtaire, manipulation de donnes, conflit de rle 31 praticiens hospitaliers dans deux Centres Hospitaliers Universitaires. Ce choix est justifi par

  4. LE SECRET DE LALE SECRET DE LA LONGVIT DESLONGVIT DES

    E-Print Network [OSTI]

    St-Ong, Guillaume

    LE SECRET DE LALE SECRET DE LA LONGVIT DESLONGVIT DES PALOURDESPALOURDES MULTI 23 9 4 Le secret de la longvit des palourdes multi-centenaires 7 La microalgue Haslea ostrearia au

  5. approach le controle: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thse soutenue Rennes le (date) devant le jury compos de : Jean-Marc MENAUD-00926228,version1-9Jan2014 12;tel-00926228,version1-9Jan2014 12;Abstract The Cloud...

  6. GE Teams with NY College to Pilot SOFC Technology |GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to...

  7. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap...

  8. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year...

  9. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4?GPa of tensile stress to be obtained.

  10. The Majorana Ge-76 double-beta decay project

    SciTech Connect (OSTI)

    Avignone, Frank Titus [ORNL

    2010-01-01T23:59:59.000Z

    The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

  11. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ok GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma...

  12. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Meet & Greet GE Researchers at ASME Turbo 2014 Thomas Ripplinger 2014.06.10 Do you love gas turbine research as much as I do? Then I want to meet you next week Since joining GE...

  13. Driving Sensing Technology in Oil & Gas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a bit more about Bill's work. Bill joined GE Global Research in 2010. For the past four years his emphasis has been on developing advanced photonics technologies for multiple GE...

  14. Louvain-la-Neuve, le 17 avril 2013 Enseignement UCL

    E-Print Network [OSTI]

    Nesterov, Yurii

    . Des groupes se forment autour d'un projet (« sauver le soldat Pacman », « comment les maths font

  15. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Universit degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

    2013-12-04T23:59:59.000Z

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

  16. Trence moralis : les sententiae de Trence selon le commentaire attribu Donat

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    du commentaire d'Eun. 422-429 (voir infra) : le soldat Thrason prsente un proverbe et le parasite

  17. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-03-11T23:59:59.000Z

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmoredilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.less

  18. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di MilanoPolo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Universit di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Mller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07T23:59:59.000Z

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  19. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07T23:59:59.000Z

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is (0.20.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  20. Dingzeyu Li LE Schapiro (CEPSR), Columbia University

    E-Print Network [OSTI]

    Grinspun, Eitan

    Dingzeyu Li LE Schapiro (CEPSR), Columbia University West th St New York, NY , USA ( ) - dli@cs.columbia.edu http://www.cs.columbia.edu/~dli/ Education Columbia University, New York, USA Sept. - present - PhD Research, Advisor: Changxi Zheng, Columbia Computer Graphics Group, Columbia University, New York, Aug

  1. Michel Grossetti Universit de Toulouse-le-

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Michel Grossetti CERS Université de Toulouse-le- Mirail, 5, Allées A. Machado, 31058 Toulouse : 05 57 57 19 72 mail : Philippe.Losego@lapsac.u- bordeaux2.fr Béatrice Milard CERS Université de and towns and the study of scientific publications. This allow us to evaluate the effects

  2. Formazione per le Aziende Catalogo CORSI

    E-Print Network [OSTI]

    De Cindio, Fiorella

    a definire nel quadro della nuova politica europea integrata energetica e climatica. Contenuti: Lo sviluppo sostenibile - I cambiamenti climatici - Le fonti e i sistemi energetici - Strumenti della politica ambientale - La politica del clima - Il protocollo di Kyoto e i meccanismi di flessibilità (IET, CDM, JI) - Il

  3. Le disque comme document 1 Karim Hammou

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    en France tome 2, L'Harmattan, 2012, pp.177-193. Le disque comme document : une analyse quantitative'action musicale, Paris, L'Harmattan, 2007, p.45 et suiv. 3 Beuscart, J.-S., « L'industrie du disque : bil

  4. LE CONTRLE EXTERNE DES ASSOCIATIONS PAR LES

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    , which can be used equally to evaluate public policies, - an external control through new rules of accountancy of the public subsidies, This article shows that the management control can influence financial to internal users like managers. Mots clés. - Secteur public, contrôle externe, association, gestion

  5. Curriculum Vit Frederic LE MOU EL

    E-Print Network [OSTI]

    Le Moul, Frdric

    / INRIA CITI Laboratory INSA Lyon B^atiment Claude Chappe 6 avenue des Arts F-69621 Villeurbanne Cedex Tel. : +33 472 436 422 Fax : +33 472 436 227 E-mail : frederic.le-mouel@insa-lyon.fr Web : http://citi, France. Researcher in the INRIA CITI Laboratory (Innovation Center in Telecommunications and Services

  6. Le origini del mondo Giuseppe Longo

    E-Print Network [OSTI]

    Santorelli, Pietro

    Bang: T= 0 (17.000.000.000 anni fa) La storia di una lenta morte termica ? L'energia totale dell ogni grandezza fisica Q diminuisce con il volume V R età = t 1/R3 1/t3 La densità di energia #12;Le origini #12;Formazione del sistema solare storia Geologia Fisica Chimica Biologia Fisica dell

  7. Service des finances Le saviez-vous ?

    E-Print Network [OSTI]

    . La certification ISO 9001 atteste qu'une organisation a dvelopp des pratiques de gestion qui responsable Penser autrement, acheter mieux ! L' Organisation internationale de normalisation (ISO) a publi durable dans une organisation : ISO 26 000 Responsabilit socitale. Une organisation engage envers le

  8. LE JOURNAL DE PHYSIQUE CENT ANS DE JOURNAL DE PHYSIQUE

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    1 LE JOURNAL DE PHYSIQUE CENT ANS DE JOURNAL DE PHYSIQUE J. LANGEVIN Pour marquer le centenaire du Journal de Physique nous publions ci-dessous un article de M. Jean Langevin, qui retrace l'histoire du Journal depuis sa fondation. Monsieur J. Langevin a occup pendant de longues annes le poste de Rdacteur

  9. Daniel RIVET, Le Maroc de Lyautey Mohammed V Le double visage du Protectorat,

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Daniel RIVET, Le Maroc de Lyautey à Mohammed V Le double visage du Protectorat, Paris, ?ditions la publication de sa thèse monumentale (Lyautey et l'institution du Protectorat français au Maroc ambitions initales. Dans l'esprit des Annales de l'époque braudélienne, "Mon Lyautey au Maroc aurait été un

  10. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  11. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01T23:59:59.000Z

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  12. Ge.Meyer -MPL-27.11.002 Status Tunerentwicklung

    E-Print Network [OSTI]

    Ge.Meyer -MPL- 27.11.002 Status Tunerentwicklung 1) Geschichte: Alter franz. Tuner weich, hatte Hysterese. Federkonstante: Gerechnet 5,4 /kN, gemessen 26,7 /kN (Faktor 5), Ge.Meyer gerechnet 14,6 Felder. 2) Tuner 0 / H.Kaiser, Ge.Meyer -MPL- Deshalb wurde ein neues Konzept berlegt. Dieses Konzept

  13. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  14. 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 711, 2001

    E-Print Network [OSTI]

    Leonard, John J.

    Preface 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 7­11, 2001 The International Lie`ge Colloquium on Ocean Dynamics is organized annually. The topic differs from year to year. Assembling a group of active and eminent scien- tists from various countries and often different disci

  15. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01T23:59:59.000Z

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  16. Appels conjoint propositions et annuel dans le cadre de l'Accord-Cadre entre le CNRS FRANCE et le CNRST MAROC

    E-Print Network [OSTI]

    van Tiggelen, Bart

    CNRST MAROC L'Appel à propositions relatif au programme de « Convention d'échanges » établi entre le CNRS France et le CNRST Maroc est ouvert chaque année : du 1er juin au 15 septembre de chaque année. Ce par an (permettant de financer 1 voyage vers le Maroc et 3 semaines de séjour de partenaires marocains

  17. Leptonic decay of the phi(1020) meson in Au+Au collisions at $\\sqrt{s_{\\rm NN}}$ = 200 GeV measured with the STAR experiment

    E-Print Network [OSTI]

    STAR Collaboration; L. Adamczyk; J. K. Adkins; G. Agakishiev; M. M. Aggarwal; Z. Ahammed; I. Alekseev; J. Alford; A. Aparin; D. Arkhipkin; E. C. Aschenauer; G. S. Averichev; A. Banerjee; R. Bellwied; A. Bhasin; A. K. Bhati; P. Bhattarai; J. Bielcik; J. Bielcikova; L. C. Bland; I. G. Bordyuzhin; J. Bouchet; A. V. Brandin; I. Bunzarov; T. P. Burton; J. Butterworth; H. Caines; M. Calder'on de la Barca S'anchez; J. M. Campbell; D. Cebra; M. C. Cervantes; I. Chakaberia; P. Chaloupka; Z. Chang; S. Chattopadhyay; J. H. Chen; X. Chen; J. Cheng; M. Cherney; W. Christie; M. J. M. Codrington; G. Contin; H. J. Crawford; S. Das; L. C. De Silva; R. R. Debbe; T. G. Dedovich; J. Deng; A. A. Derevschikov; B. di Ruzza; L. Didenko; C. Dilks; X. Dong; J. L. Drachenberg; J. E. Draper; C. M. Du; L. E. Dunkelberger; J. C. Dunlop; L. G. Efimov; J. Engelage; G. Eppley; R. Esha; O. Evdokimov; O. Eyser; R. Fatemi; S. Fazio; P. Federic; J. Fedorisin; Feng; P. Filip; Y. Fisyak; C. E. Flores; L. Fulek; C. A. Gagliardi; D. Garand; F. Geurts; A. Gibson; M. Girard; L. Greiner; D. Grosnick; D. S. Gunarathne; Y. Guo; A. Gupta; S. Gupta; W. Guryn; A. Hamad; A. Hamed; R. Haque; J. W. Harris; L. He; S. Heppelmann; S. Heppelmann; A. Hirsch; G. W. Hoffmann; D. J. Hofman; S. Horvat; B. Huang; X. Huang; H. Z. Huang; P. Huck; T. J. Humanic; G. Igo; W. W. Jacobs; H. Jang; K. Jiang; E. G. Judd; S. Kabana; D. Kalinkin; K. Kang; K. Kauder; H. W. Ke; D. Keane; A. Kechechyan; Z. H. Khan; D. P. Kikola; I. Kisel; A. Kisiel; D. D. Koetke; T. Kollegger; L. K. Kosarzewski; L. Kotchenda; A. F. Kraishan; P. Kravtsov; K. Krueger; I. Kulakov; L. Kumar; R. A. Kycia; M. A. C. Lamont; J. M. Landgraf; K. D. Landry; J. Lauret; A. Lebedev; R. Lednicky; J. H. Lee; Z. M. Li; Y. Li; X. Li; C. Li; W. Li; X. Li; M. A. Lisa; F. Liu; T. Ljubicic; W. J. Llope; M. Lomnitz; R. S. Longacre; X. Luo; Y. G. Ma; R. Ma; G. L. Ma; L. Ma; N. Magdy; R. Majka; A. Manion; S. Margetis; C. Markert; H. Masui; H. S. Matis; D. McDonald; K. Meehan; N. G. Minaev; S. Mioduszewski; B. Mohanty; M. M. Mondal; D. A. Morozov; M. K. Mustafa; B. K. Nandi; Md. Nasim; T. K. Nayak; G. Nigmatkulov; L. V. Nogach; S. Y. Noh; J. Novak; S. B. Nurushev; G. Odyniec; A. Ogawa; K. Oh; V. Okorokov; D. L. Olvitt Jr.; B. S. Page; R. Pak; Y. X. Pan; Y. Pandit; Y. Panebratsev; T. Pawlak; B. Pawlik; H. Pei; C. Perkins; A. Peterson; P. Pile; M. Planinic; J. Pluta; N. Poljak; K. Poniatowska; J. Porter; M. Posik; A. M. Poskanzer; N. K. Pruthi; J. Putschke; H. Qiu; A. Quintero; S. Ramachandran; S. Raniwala; R. Raniwala; R. L. Ray; H. G. Ritter; J. B. Roberts; O. V. Rogachevskiy; J. L. Romero; A. Roy; L. Ruan; J. Rusnak; O. Rusnakova; N. R. Sahoo; P. K. Sahu; I. Sakrejda; S. Salur; A. Sandacz; J. Sandweiss; A. Sarkar; J. Schambach; R. P. Scharenberg; A. M. Schmah; W. B. Schmidke; N. Schmitz; J. Seger; P. Seyboth; N. Shah; E. Shahaliev; P. V. Shanmuganathan; M. Shao; B. Sharma; M. K. Sharma; W. Q. Shen; S. S. Shi; Q. Y. Shou; E. P. Sichtermann; R. Sikora; M. Simko; M. J. Skoby; N. Smirnov; D. Smirnov; D. Solanki; L. Song; P. Sorensen; H. M. Spinka; B. Srivastava; T. D. S. Stanislaus; M. Stepanov; R. Stock; M. Strikhanov; B. Stringfellow; M. Sumbera; B. J. Summa; Y. Sun; X. M. Sun; X. Sun; Z. Sun; B. Surrow; D. N. Svirida; M. A. Szelezniak; A. H. Tang; Z. Tang; T. Tarnowsky; A. N. Tawfik; J. H. Thomas; A. R. Timmins; D. Tlusty; M. Tokarev; S. Trentalange; R. E. Tribble; P. Tribedy; S. K. Tripathy; B. A. Trzeciak; O. D. Tsai; T. Ullrich; D. G. Underwood; I. Upsal; G. Van Buren; G. van Nieuwenhuizen; M. Vandenbroucke; R. Varma; A. N. Vasiliev; R. Vertesi; F. Videbaek; Y. P. Viyogi; S. Vokal; S. A. Voloshin; A. Vossen; J. S. Wang; G. Wang; F. Wang; Y. Wang; Y. Wang; H. Wang; G. Webb; J. C. Webb; L. Wen; G. D. Westfall; H. Wieman; S. W. Wissink; R. Witt; Y. F. Wu; Z. Xiao; W. Xie; K. Xin; Q. H. Xu; Z. Xu; Y. F. Xu; N. Xu; H. Xu; Y. Yang; S. Yang; Q. Yang; Y. Yang; C. Yang; Z. Ye; P. Yepes; L. Yi; K. Yip; I. -K. Yoo; N. Yu; H. Zbroszczyk; W. Zha; X. P. Zhang; J. B. Zhang; Y. Zhang; J. Zhang; Z. Zhang; J. L. Zhang; S. Zhang; J. Zhao; F. Zhao; C. Zhong; L. Zhou; X. Zhu; Y. Zoulkarneeva; M. Zyzak

    2015-03-13T23:59:59.000Z

    We report the measurement of the phi(1020) meson production via the leptonic decay channel in Au+Au collisions at $\\sqrt{s_{\\rm NN}}$ = 200 GeV from the STAR (Solenoidal Tracker at RHIC) experiment. The transverse momentum ($p_{\\rm T}$) spectrum is measured for 0.1 $\\le p_{\\rm T} \\le 2.5$ GeV/$c$ at mid-rapidity ($|y|\\le1$) with a similar detector setup of corresponding measurements via the hadronic decay channel. We obtain the $p_{\\rm T}$-integrated phi(1020) mass $M_{\\phi}=1017.7\\pm0.8 (\\rm {stat.}) \\pm0.9 (\\rm {sys.})$ MeV/$c^{2}$ and width $\\Gamma_{\\phi} = 8.0\\pm 2.5(\\rm {stat.}) \\pm 2.3(\\rm {sys.}) \\textrm{MeV/}c^{2}$, which are within 1.5 $\\sigma$ and 1.1 $\\sigma$ of the vacuum values, respectively. No significant difference is observed in the reconstructed phi(1020) $p_{\\rm T}$ spectrum, $dN/dy$, or $\\left$ between the leptonic and hadronic decay channels. The experimental results are compared to a theoretical model including the medium-modified phi(1020).

  18. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24T23:59:59.000Z

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  19. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  20. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28T23:59:59.000Z

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  1. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  2. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  3. Upgrade of CEBAF from 6-GeV To 12-GeV: Status

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-04-01T23:59:59.000Z

    The CEBAF accelerator is being upgraded from 6 GeV to 12 GeV by the US Department of Energy. The accelerator upgrade is being done within the existing tunnel footprint. The accelerator upgrade includes: 10 new srfbased high-performance cryomodules plus RF systems, doubling the 2K helium plants capability, upgrading the existing beamlines to operate at nearly double the original performance envelope, and adding a beamline to a new experimental area. Construction is over 75% complete with final completion projected for late FY13. Details of the upgrade and status of the work will be presented.

  4. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Universit degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21T23:59:59.000Z

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  5. SiGe thin-film structures for solar cells

    SciTech Connect (OSTI)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31T23:59:59.000Z

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  6. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPO WebsitePalms Village ResortEnergyL L 2PatentGE's E.

  7. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE, MIT

  8. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE,

  9. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess Stories Site MapSolarAboutTaubmanBiofuels Research at GE's

  10. Interprte/orateur : pour le meilleur et pour le pire Elsa Yazbek Charabati

    E-Print Network [OSTI]

    Boyer, Edmond

    est là, là-bas : donc présent, en cabine ; et dans le noir, c'est à dire dans les coulisses. Il est là pour transmettre les paroles de l'orateur dans une autre langue. Il est là-bas, dans les coulisses dans l'oreille d'une grande célébrité, il est là ou là-bas, mais on ne le voit pas. Sans l'orateur, l

  11. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  12. Developpement WebPHP pour le Web Developpement Web

    E-Print Network [OSTI]

    Richer, Jean-Michel

    D´eveloppement WebPHP pour le Web D´eveloppement Web PHP pour le Web Jean-Michel Richer jean-michel.richer@univ-angers.fr http://www.info.univ-angers.fr/pub/richer 2008 1 / 130 #12;D´eveloppement WebPHP pour le Web Objectif´eveloppement Web fonctionnalit´es de base du langage acc`es aux bases de donn´ees (PDO) la couche objet (classe, h

  13. Myriam Catusse Les rinventions du social dans le Maroc

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Myriam Catusse Les réinventions du social dans le Maroc "ajusté" Revue des mondes musulmans et de of depoliticization. Résumé : Le Maroc de l'ajustement structurel et de la libéralisation économique est le théâtre d, publiait un article intitulé «La trajectoire du Maroc indépendant : une panne de l'ascenseur social

  14. LE SYSTEME PHONOLOGIQUE DU PUREPECHA UNE ETUDE EN SYNCHRONIE DYNAMIQUE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    'évoluent pas dans des tours d'ivoire » dit justement Martinet3 (p. 89). Caractérisée par un plurilinguisme langue vernaculaire. Langue parlée au Mexique, au nord-ouest de l'état du Michoacan, le purepecha compte les foyers où le purepecha est parlé. Tel n'est pas le cas, au contraire en général dans ces foyers

  15. Le Costa Rica en un clin d'oeil !

    E-Print Network [OSTI]

    Montréal, Université de

    ) Maîtrise Maestria (2 ans) Doctorat Doctorado (3 à 4 ans) CR?DITS Il faut souvent regarder le nombre d'Amérique centrale, pionnier de l'écotourisme. Il possède une flore et faune exceptionnelles (6% de la biodiversité mondiale s'y trouve). Le Costa Rica est aussi «un pays neutre»:il est le premier pays à avoir consti

  16. Interdisciplinary Institute for Innovation Le risque d'accident nuclaire

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Interdisciplinary Institute for Innovation Le risque d'accident nucléaire majeur : calcul et-27Feb2013 #12;Le risque d'accident nucléaire majeur : calcul et perception des probabilités1 François Lévêque L'accident de Fukushima Daiichi s'est produit le 11 mars 2011. Cette catastrophe nucléaire

  17. A New Look at the Galactic Diffuse GeV

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    ;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected #12;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected Physics 1 #12;Overview Diffuse gamma-ray emission The Galactic diffuse gamma-ray GeV excess Discussion

  18. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21T23:59:59.000Z

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  19. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01T23:59:59.000Z

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  20. GE Technology to Help Canada Province Meet Growing Energy Needs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

  1. Limitless Hot Gas Path Cooling Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Organization at GE Global Research, one such potent combination already taking shape is Additive Manufacturing and High Pressure Turbine Blade Cooling. Additive Manufacturing...

  2. GE researchers perform simulations in pursuit of more efficient...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE researchers perform simulations in pursuit of more efficient jet engines and wind turbines Author: John Spizzirri . July 1, 2014 Printer-friendly version The recent addition of...

  3. How Will We Explore Earth's Final Frontier? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    see how technology is helping us understand, utilize and protect the last frontier on earth. At GE Global Research's Rio de Janiero location, researchers are developing...

  4. Media Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for its 310 million 12 GeV Upgrade project. When: Tuesday, April 14, 2009. Where: CEBAF Center, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue,...

  5. GE's Arnie Lund Discusses User Experience at an Industrial Scale...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the Farstuff Podcast about...

  6. approaching cryogenic ge: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Very low Weinreb, Sander 2 Draft 040509 A new high-background-rejection dark matter Ge cryogenic Computer Technologies and Information Sciences Websites Summary: Draft...

  7. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  8. 30 ORLA-JENSEN SUR LE GOUT DU CHOU-NAVET

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    30 ORLA-JENSEN SUR LE GOUT DU CHOU-NAVET DANS' LE LAIT par le Professeur ORLA-JENSEN . Docteur phil liquéfiée. SUR LE GOUT DU CHOU-NAYET DANS LE LAIT rigoureux qu a l'ordinaire;' il -deviendra même nécessaire

  9. LE TECHNO-QUOTIDIEN PAGE 1 flash informatique

    E-Print Network [OSTI]

    la place de e-mail C un soldat ukrainien midi A le milieu du jour B l'acronyme de Musical Instrument

  10. Jacques de Vintimille Le Prince de Nicolas Machiavel

    E-Print Network [OSTI]

    Boyer, Edmond

    partie soldat », dont le coeur était « addonné aux lettres et aux armes », allait fréquenter l

  11. au japon le: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    XI, Universit de 33 L'intgration des Supply chains Internationales impliques au Maroc : Le rle du contexte culturel. Physics Websites Summary: -organisationnelle occupe une...

  12. aspects pratiques le: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2013-01-01 26 Le choix de la graphie tifinaghe pour enseigner, apprendre l'amazighe au Maroc : conditions, reprsentation et pratiques. Open Access Theses and Dissertations...

  13. accelerer le progres: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Paris-Sud XI, Universit de 57 Myriam Catusse Les rinventions du social dans le Maroc Physics Websites Summary: organizations. This acceleration of social reform is based...

  14. LeAnn Oliver | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613 122Commercial602 1,39732on ArmedManufacturingJune 17, 2015LMLandLaws &LeAnn Oliver

  15. Le processus de commissionnement vu par le maitre d'ouvrage

    E-Print Network [OSTI]

    Moro, M.

    2004-01-01T23:59:59.000Z

    gestion au niveau national et localavec accompagnement r?glementaire, technique et financier, national ?ventuellement r?gional, et des comp?tences locales diverses. UN PATRIMOINE HETEROGENE LE PATRIMOINE 6 300000 m? dont 90% > 10 ans L?Ucanssintervient sur...

  16. Universit Toulouse 2 Le Mirail (UT2 Le Mirail) ED ALLPH@ : Allemand

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    quelles avaient t les apparitions de Hitler sur la scne politique qui avaient le plus dchan les l'opposition Hitler avant 1933 partir des seules caricatures. caricature Hitler presse satirique reconstruction through anti-Hitler caricatures in the satirical press of the Weimar Republic. They illustrate

  17. Le mythe de la gouvernance urbaine en Algrie, le cas d'Oran MOUAZIZ-BOUCHENTOUF Najet1

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    comme ce fut le cas en Europe (la ville du nord). halshs-00381584,version1-6May2009 Manuscrit auteur1 Le mythe de la gouvernance urbaine en Algérie, le cas d'Oran MOUAZIZ-BOUCHENTOUF Najet1 Aborder la gestion de la ville du sud2 sans faire référence à la gouvernance urbaine relèverait presque d

  18. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15T23:59:59.000Z

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  19. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    SciTech Connect (OSTI)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16T23:59:59.000Z

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  20. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12T23:59:59.000Z

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  1. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16T23:59:59.000Z

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  2. La Qualit l'ENSEEIHT Le Systme de Management de la qualit (ISO 9001)

    E-Print Network [OSTI]

    Grigoras, .Romulus

    La Qualit l'ENSEEIHT Le Systme de Management de la qualit (ISO 9001) En 3 mots : le Systme de Management de la qualit (ISO 9001) - Le SMQ c'est : * Raliser = Procdures, raliser les activits (selon

  3. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  4. High Capacity Li Ion Battery Anodes Using Ge Nanowires

    E-Print Network [OSTI]

    Cui, Yi

    High Capacity Li Ion Battery Anodes Using Ge Nanowires Candace K. Chan, Xiao Feng Zhang, and Yi Cui efficiency > 99%. Structural characterization revealed that the Ge nanowires remain intact and connected nanowire anodes are promising candidates for the development of high-energy-density lithium batteries

  5. Project-X Workshop 120 GeV Target

    E-Print Network [OSTI]

    McDonald, Kirk

    Project-X Workshop 120 GeV Target Summary ­ Workshop # 1 N. Simos, M. Martens #12;Project-X Workshop Challenges OVERVIEW Driven by 120 GeV/170 TP-per-spill · Short Term: 170 TPs/2us-spill (materials an existing 400 kW facility ­ Constraints #12;Project-X Workshop Presentations - Discussions · Engineering

  6. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  7. Excess vacancies in high energy ion implanted SiGe

    SciTech Connect (OSTI)

    Koegler, R.; Muecklich, A.; Skorupa, W.; Peeva, A.; Kuznetsov, A. Yu.; Christensen, J. S.; Svensson, B. G. [Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden (Germany); Institute of Solid State Physics BAS, Boulevard Tzarigradsko Chaussee 72, 1784 Sofia (Bulgaria); Deparment of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2007-02-01T23:59:59.000Z

    Excess vacancies generated by high energy implantation with 1.2 MeV Si{sup +} and 2 MeV Ge{sup +} ions in SiGe were investigated after rapid thermal annealing at 900 degree sign C. Excess vacancies were probed by decoration with Cu and measuring the Cu profile by secondary ion mass spectrometry. Cross section transmission electron microscopy of cleaved specimen enabled to visualize nanocavities resulting from agglomeration of excess vacancies. The ion-induced damage in SiGe increases with increasing Ge fraction of the alloy. The amorphization threshold decreases and the extension of a buried amorphous layer increases for given implantation and annealing conditions. In contrast to ballistic simulations of excess defect generation where perfect local self-annihilation is assumed the concentrations of excess vacancies and excess interstitials in SiGe increase with increasing Ge fraction. The main contribution to the high excess vacancy concentration in SiGe results from the inefficient recombination of vacancies and interstitials. The widely used +1 model describing the ion-induced damage in Si is not valid for SiGe.

  8. Volcanic rifting at Martian grabens Daniel Me`ge,1

    E-Print Network [OSTI]

    Mege, Daniel

    Volcanic rifting at Martian grabens Daniel Me`ge,1 Anthony C. Cook,2,3 Erwan Garel,4 Yves: Solar System Objects: Mars; 8121 Tectonophysics: Dynamics, convection currents and mantle plumes; 8010: Me`ge, D., A. C. Cook, E. Garel, Y. Lagabrielle, and M.-H. Cormier, Volcanic rifting at Martian

  9. LE JOURNAL DE PHYSIQUE L'COULEMENT DES MTAUX (1)

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    exemple, les pales d'une turbine vapeur tournant grande vitesse; si ces pales s'allongent de quelques millimes elles risqueront de toucher le corps de l'appareil, avec un danger vident. Dans les turbines gaz employes danse les avions les plus rcents, le danger est de beaucoup augment cause des

  10. octobre 2005 : le nord du Pakistan subit un violent

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Editoria octobre 2005 : le nord du Pakistan subit un violent sisme suivi de cen- taines de'une vingtaine de ces hlico- ptres indispensables pour sauver les populations civiles. Mais le Pakistan, par Turquie ou au Pakistan1 . > Dans d'autres pays, l'importance donne aux canons est davantage usage

  11. avec le test: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    le test First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Le barman aveugle avec des gants de Fabien...

  12. Direction des immeubles Prparation du courrier prioritaire pour le Canada

    E-Print Network [OSTI]

    Charette, André

    Direction des immeubles Préparation du courrier prioritaire pour le Canada Comment faire? 1 requis ainsi que le code postal Pour expédier du courrier par Postes Canada · Vous pouvez utiliser une adresse civique et/ou une case postale. · Pour recevoir du courrier par Postes Canada, vous devez utiliser

  13. LE NOUVEAU MANAGEMENT PUBLIC ET LA BUREAUCRATIE PROFESSIONNELLE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    compte, conflit Abstract : The New Public Management introduces new ways of considering public1 LE NOUVEAU MANAGEMENT PUBLIC ET LA BUREAUCRATIE PROFESSIONNELLE Florence GANGLOFF Université.gangloff@hotmail.fr Résumé : Le nouveau management public introduit de nouvelles façons de considérer les organisations

  14. Interdisciplinary Institute for Innovation Le risque d'accident nuclaire

    E-Print Network [OSTI]

    Boyer, Edmond

    . Cochran. (2011), Fukushima nuclear disaster and its implication for US nuclear power reactors. Ce chiffre Lvque L'accident de Fukushima Daiichi s'est produit le 11 mars 2011. Cette catastrophe nuclaire irrmdiablement associe une centrale nuclaire dont l'homme a perdu le contrle. Fukushima Daiichi a ainsi fait

  15. LE 6 AVRIL 2004 RGIME DE RETRAITE DE

    E-Print Network [OSTI]

    Skorobogatiy, Maksim

    , par le biais d'un appel d'offres, de la socit Mercer, Consultation en gestion de placement pour'cole. Vers la fin des annes 90, les fonds de la firme de placement amricaine Lancer Management Group Mercer. Recherche d'un nouveau gestionnaire d'actions amricaines. Du point de vue financier, le Comit

  16. Le silicium polycristallin Polix : laboration, proprits et performances

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    méthode est due à l'utilisation d'un encapsulant qui agit comme une barrière entre le creuset et le bain by unidirectional solidification. An encapsulant is used to prevent impurities of the crucible from diffusing into the liquid bath. The influence of thermal, physical parameters on the photovoltaic properties of solar cells

  17. TYPOLOGIE LINGUISTIQUE ET HISTOIRE DU PEUPLEMENT : LE CAS DES LANGUES GUR DU BURKINA FASO

    E-Print Network [OSTI]

    Boyer, Edmond

    1 TYPOLOGIE LINGUISTIQUE ET HISTOIRE DU PEUPLEMENT : LE CAS DES LANGUES GUR DU BURKINA FASO Alain latitude nord, et du 7° de longitude ouest au 4° de longitude est, sur l'ensemble du Burkina Faso, mais débordant largement sur tous les pays voisins, le Mali, le Niger, la Côte d'Ivoire, le Ghana, le Togo, le

  18. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Sess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10T23:59:59.000Z

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  19. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe J. Akola1,2 and R. O. Jones1 1Institut fr Festkrperforschung, Forschungszentrum to characterize the amorphous structure of the prototype materials Ge2Sb2Te5 and GeTe. In both, there is long

  20. III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth

    E-Print Network [OSTI]

    III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 110 SiGe Single, West Lafayette, IN 47907, U.S.A. Nanodevices on Si/SiGe heterostructures are of growing interest [1 the performance of the devices. In this paper, we demonstrate a reproducible single-hole transistor SiGe device

  1. The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites

    E-Print Network [OSTI]

    Tomar, Vikas

    The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites This article has been downloaded from IOPscience. Please scroll down to see and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites Vikas

  2. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14T23:59:59.000Z

    Structural models of growing Ge hut clusterspyramids and wedgesare proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  3. Nadge Ragaru lections, lgitimit politique et stabilit dans les Balkans : le lien

    E-Print Network [OSTI]

    Boyer, Edmond

    Nadge Ragaru lections, lgitimit politique et stabilit dans les Balkans : le lien manquant In. lections, lgitimit politique et stabilit dans les Balkans : le lien manquant. In: Revue d

  4. ALERTEES PAR LA MORT CELLULAIRE, NOS DEFENSES ANTIVIRALES METTENT LE TURBO

    E-Print Network [OSTI]

    Loewith, Robbie

    MORT CELLULAIRE, NOS DEFENSES ANTIVIRALES METTENT LE TURBO Genève, le 9 février 2012 SOUS EMBARGO JUSQU

  5. THSE / UNIVERSIT DE RENNES 1 sous le sceau de l'Universit Europenne de Bretagne

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Provisioning in Cloud Computing Thèse soutenue à Rennes le (date) devant le jury composé de : Jean-Marc MENAUD

  6. Pseudorapidity Distribution of Charged Particles in d + Au Collisions at $\\sqrt{s_{_{NN}}$ = 200 GeV

    E-Print Network [OSTI]

    B. B. Back

    2003-11-10T23:59:59.000Z

    The measured pseudorapidity distribution of primary charged particles in minimum-bias d + Au collisions at ${\\sqrt{s_{_{NN}}} = \\rm {200 GeV}}$ is presented for the first time. This distribution falls off less rapidly in the gold direction as compared to the deuteron direction. The average value of the charged particle pseudorapidity density at midrapidity is ${\\rm _{\\mid \\eta \\mid \\le 0.6} = 9.4 \\pm 0.7(syst)}$ and the integrated primary charged particle multiplicity in the measured region is 82 $\\pm$ 6(syst). Estimates of the total charged particle production, based on extrapolations outside the measured pseudorapidity region, are also presented. The pseudorapidity distribution, normalized to the number of participants in d + Au collisions, is compared to those of Au + Au and ${\\rm p}+\\bar{\\rm p}$ systems at the same energy. The d + Au distribution is also compared to the predictions of the parton saturation model, as well as microscopic models.

  7. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01T23:59:59.000Z

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  8. Une nouvelle grille d'analyse pour le contrle de gestion hospitalier : le contrle intgr de Simons

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    1 Une nouvelle grille d'analyse pour le contrle de gestion hospitalier : le contrle intgr de'Entreprise et du Management, Universit de Montpellier 1, jeldds@hotmail.fr Thierry NOBRE, Professeur des Universits, Ecole de Management Strasbourg thierry.nobre@unistra.fr Rsum : Cette communication a pour but d

  9. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01T23:59:59.000Z

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface () Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  10. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01T23:59:59.000Z

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  11. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01T23:59:59.000Z

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  12. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01T23:59:59.000Z

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  13. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    segregation in Mn-doped Ge, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  14. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04T23:59:59.000Z

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 C annealed samples.

  15. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M., E-mail: nicolau.bom@ufrgs.br [PGMICRO, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Soares, G. V.; Hartmann, S.; Bordin, A. [Instituto de Fsica, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Radtke, C. [Instituto de Qumica, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)

    2014-10-06T23:59:59.000Z

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  16. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  17. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mszros; M. J. Rees

    2011-04-26T23:59:59.000Z

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  18. Efficient tunable luminescence of SiGe alloy sheet polymers

    SciTech Connect (OSTI)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-06-18T23:59:59.000Z

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si{sub 1{minus}x}Ge{sub x}){sub 2} precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. {copyright} 2001 American Institute of Physics.

  19. Spin-polarized photoemission from SiGe heterostructures

    SciTech Connect (OSTI)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04T23:59:59.000Z

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  20. Optical absorption in highly-strained Ge/SiGe quantum wells: the role of ?-to-? scattering

    E-Print Network [OSTI]

    L. Lever; Z. Ikoni?; A. Valavanis; R. W. Kelsall; M. Myronov; D. R. Leadley; Y. Hu; N. Owens; F. Y. Gardes; G. T. Reed

    2013-02-28T23:59:59.000Z

    We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the \\Gamma-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the \\Gamma-valley carrier lifetimes by evaluating the \\Gamma-to-L and \\Gamma-to-\\Delta{} scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically-varied dimensions. We find that \\Gamma-to-\\Delta{} scattering is significant in compressively strained Ge quantum wells and that the \\Gamma-valley electron lifetime is less than 50 fs in the highly-strained structures reported here, where \\Gamma-to-\\Delta{} scattering accounted for approximately half of the total scattering rate.

  1. Search for GeV Gamma Ray Bursts with the ARGO-YBJ Detector: Summary of Eight Years of Observations

    E-Print Network [OSTI]

    Bartoli, B; Bi, X J; Branchini, P; Budano, A; Camarri, P; Cao, Z; Cardarelli, R; Catalanotti, S; Chen, S Z; Chen, T L; Creti, P; Cui, S W; Dai, B Z; D'Amone, A; Danzengluobu,; De Mitri, I; Piazzoli, B D'Ettorre; Di Girolamo, T; Di Sciascio, G; Feng, C F; Feng, Zhaoyang; Feng, Zhenyong; Gou, Q B; Guo, Y Q; He, H H; Hu, Haibing; Hu, Hongbo; Iacovacci, M; Iuppa, R; Jia, H Y; Labaciren,; Li, H J; Liguori, G; Liu, C; Liu, J; Liu, M Y; Lu, H; Ma, L L; Ma, X H; Mancarella, G; Mari, S M; Marsella, G; Martello, D; Mastroianni, S; Montini, P; Ning, C C; Panareo, M; Perrone, L; Pistilli, P; Ruggieri, F; Salvini, P; Santonico, R; Shen, P R; Sheng, X D; Shi, F; Surdo, A; Tan, Y H; Vallania, P; Vernetto, S; Vigorito, C; Wang, H; Wu, C Y; Wu, H R; Xue, L; Yang, Q Y; Yang, X C; Yao, Z G; Yuan, A F; Zha, M; Zhang, H M; Zhang, L; Zhang, X Y; Zhang, Y; Zhao, J; Zhaxiciren,; Zhaxisangzhu,; Zhou, X X; Zhu, F R; Zhu, Q Q; Zizzi, G

    2015-01-01T23:59:59.000Z

    The search for Gamma Ray Burst (GRB) emission in the energy range 1-100 GeV in coincidence with the satellite detection has been carried out using the Astrophysical Radiation with Ground-based Observatory at YangBaJing (ARGO-YBJ) experiment. The high altitude location (4300 m a.s.l.), the large active surface ($\\sim$ 6700 m$^2$ of Resistive Plate Chambers), the wide field of view ($\\sim 2~$sr, limited only by the atmospheric absorption) and the high duty cycle ($>$ 86 %) make the ARGO-YBJ experiment particularly suitable to detect short and unexpected events like GRBs. With the scaler mode technique, i.e., counting all the particles hitting the detector with no measurement of the primary energy and arrival direction, the minimum threshold of $\\sim$ 1 GeV can be reached, overlapping the direct measurements carried out by satellites. During the experiment lifetime, from December 17, 2004 to February 7, 2013, a total of 206 GRBs occurring within the ARGO-YBJ field of view (zenith angle $\\theta$ $\\le$ 45$^{\\circ}...

  2. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell isOklahoma City, USAGE BBQ Center isThe GE

  3. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19T23:59:59.000Z

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5? to 1? with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  4. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25T23:59:59.000Z

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  5. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Universit Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10T23:59:59.000Z

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  6. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our...

  7. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  8. Taking on the World's Toughest Problems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    direct write2square The GE Store for Technology is Open for Business 2-4-13-v-3d-printing-medical-devices Invention Factory: How Will The World Get Smaller? ...

  9. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick [University of Texas at Austin; Fredrickson, Kurt [University of Texas at Austin; Posadas, Agham B. [University of Texas at Austin; Ren, Yuan [University of Texas at Austin; Vasudevan, Rama K [ORNL; Okatan, Mahmut Baris [ORNL; Jesse, Stephen [ORNL; Aoki, Toshihiro [Arizona State University; McCartney, Martha [Arizona State University; Smith, David J [Arizona State University; Kalinin, Sergei V [ORNL; Lai, Keji [University of Texas at Austin; Demkov, Alexander A. [University of Texas at Austin

    2015-01-01T23:59:59.000Z

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  10. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  11. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01T23:59:59.000Z

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  12. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  13. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09T23:59:59.000Z

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  14. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronicphotonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  15. High-Speed Network Enables Industrial Internet | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Unveils High-Speed Network Infrastructure to Connect Machines, Data and People at Light...

  16. GE Software Expert Julian Keith Loren Discusses Innovation and...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Software Expert Julian Keith Loren Discusses Innovation and the Industrial Internet Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window)...

  17. Technology "Relay Race" Against Cancer | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Scientists in Technology "Relay Race" Against Cancer Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  18. An Update on the Brazil Tech Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    desde meu ultimo update a voces sobre o Centro de Pesquisas da GE no Rio de Janeiro, Brasil e tambm minha terra natal 2011 foi um timo ano para mim. Depois de viver na...

  19. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window) Share on Facebook (Opens...

  20. ECS Transactions 3, (7), 1211-1222 (2006) Characterization of Strained Si/SiGe with Raman, Pulsed MOS Capacitor

    E-Print Network [OSTI]

    Schroder, Dieter K.

    2006-01-01T23:59:59.000Z

    ECS Transactions 3, (7), 1211-1222 (2006) 1211 Characterization of Strained Si/SiGe with Raman silicon/relaxed SiGe/graded SiGe/Si samples. The effective generation lifetime depends on the defect defective SiGe. GOI statistical analysis shows worsening oxide breakdown as the Ge concentration in the SiGe

  1. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4028

    E-Print Network [OSTI]

    Di Girolami, Cristina

    MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE RESPONS. POLE GESTION

  2. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4016

    E-Print Network [OSTI]

    Di Girolami, Cristina

    MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE RESPONS. POLE GESTION

  3. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4025

    E-Print Network [OSTI]

    Di Girolami, Cristina

    MANS Contact administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE RESPONS. POLE GESTION

  4. Un diagnostic vitalLe paludisme peut provoquer la mort, mais il est possible

    E-Print Network [OSTI]

    vomissements, de toux et parfois de diarrhes chez les nourrissons. Le malade est gnralement trs fatigu

  5. LE CONTROLE DES TEMPS ET DES DELAIS DANS LES SERVICES COMMUNAUX

    E-Print Network [OSTI]

    Boyer, Edmond

    , kaizen costing, qualit totale, zro stocks, etc.). Le contrle de gestion dans ses mthodes et ses

  6. L'INSTITUTIONNALISATION DE LA RESPONSABILITE SOCIALE DANS LE CONTRLE DE GESTION ET LA COMPTABILITE

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    ont lanc le Global Compact, initiative destine aux entreprises et visant les responsabiliser. Dix

  7. Pour obtenir le grade de DOCTEUR DE L'INA-PG

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    dynamisme soient souligns dans ces remerciements Momo le Cathare ! Je tiens galement exprimer mes

  8. Effet d'un oligoholoside de synthse, le TOS (galactose-(galactose) n-glucose),

    E-Print Network [OSTI]

    Boyer, Edmond

    Effet d'un oligoholoside de synthse, le TOS (galactose- (galactose) n-glucose), sur le mtabolisme Jouy-en-Josas cedex, France) Le TOS synthtis au Japon (Yakult Institute) est obtenu partir du, 1989). L'incidence du TOS sur le mtabolisme bac- trien a t tudi chez des rats Fischer 344 adultes

  9. Depuis les annes 1950, le recours l'automobile pour de courts

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Depuis les années 1950, le recours à l'automobile pour de courts trajets quotidiens ne cesse de elles seules, à réduire le recours à l'automobile. La question se pose alors de cerner les conditions permettant de changer le comportement en matière de choix modal (bus ou automobile) : le station- nement ne

  10. Broad Line Radio Galaxies Observed with Fermi-LAT: The Origin of the GeV Gamma-Ray Emission

    SciTech Connect (OSTI)

    Kataoka, J.; /Waseda U., RISE; Stawarz, L.; /JAXA, Sagamihara /Jagiellonian U., Astron. Observ.; Takahashi, Y.; /Waseda U., RISE; Cheung, C.C.; /Natl. Acad. Sci. /Naval Research Lab, Wash., D.C.; Hayashida, M.; /SLAC /Stanford U., HEPL /KIPAC, Menlo Park; Grandi, P.; /Bologna Observ.; Burnett, T.H.; /Washington U., Seattle; Celotti, A.; /SISSA, Trieste; Fegan, S.J.; Fortin, P.; /Ecole Polytechnique; Maeda, K.; Nakamori, T.; /Waseda U., RISE; Taylor, G.B.; /New Mexico U.; Tosti, G.; /INFN, Perugia /Perugia U.; Digel, S.W.; /SLAC /Stanford U., HEPL /KIPAC, Menlo Park; McConville, W.; /NASA, Goddard /Maryland U.; Finke, J.; /Naval Research Lab, Wash., D.C.; D'Ammando, F.; /IASF, Palermo /INAF, Rome

    2012-06-07T23:59:59.000Z

    We report on a detailed investigation of the {gamma}-ray emission from 18 broad line radio galaxies (BLRGs) based on two years of Fermi Large Area Telescope (LAT) data. We confirm the previously reported detections of 3C 120 and 3C 111 in the GeV photon energy range; a detailed look at the temporal characteristics of the observed {gamma}-ray emission reveals in addition possible flux variability in both sources. No statistically significant {gamma}-ray detection of the other BLRGs was however found in the considered dataset. Though the sample size studied is small, what appears to differentiate 3C 111 and 3C 120 from the BLRGs not yet detected in {gamma}-rays is the particularly strong nuclear radio flux. This finding, together with the indications of the {gamma}-ray flux variability and a number of other arguments presented, indicate that the GeV emission of BLRGs is most likely dominated by the beamed radiation of relativistic jets observed at intermediate viewing angles. In this paper we also analyzed a comparison sample of high accretion-rate Seyfert 1 galaxies, which can be considered radio-quiet counterparts of BLRGs, and found none were detected in {gamma}-rays. A simple phenomenological hybrid model applied for the broad-band emission of the discussed radio-loud and radio-quiet type 1 active galaxies suggests that the relative contribution of the nuclear jets to the accreting matter is {ge} 1% on average for BLRGs, while {le} 0.1% for Seyfert 1 galaxies.

  11. The Jefferson Lab 12 GeV Upgrade

    E-Print Network [OSTI]

    McKeown, R D

    2010-01-01T23:59:59.000Z

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program.

  12. The Jefferson Lab 12 GeV Upgrade

    E-Print Network [OSTI]

    R. D. McKeown

    2010-09-22T23:59:59.000Z

    Construction of the 12 GeV upgrade to the Continuous Electron Beam Accelerator Facility (CEBAF) at the Thomas Jefferson National Accelerator Facility is presently underway. This upgrade includes doubling the energy of the electron beam to 12 GeV, the addition of a new fourth experimental hall, and the construction of upgraded detector hardware. An overview of this upgrade project is presented, along with highlights of the anticipated experimental program.

  13. abdominopelviennes fixant le: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    sur l'organisation du march ? D'un point de vue marchand, le big data consiste transformer les traces big data est donc un processus de documentation. D'abord, nous...

  14. UNIVERSIT DEGLI STUDI La cooperazione internazionaLe

    E-Print Network [OSTI]

    De Cindio, Fiorella

    DELLA LUCE (Togo) AQUAPLUS - Acqua Energia per la Vita (Haiti) Lotta integrata al fitoplasma delle dei codici normalizzati OCSE per le prove dei trattori agricoli e forestali (Brasile) Biotecnologia da

  15. LE SYSTEME D'INFORMATION DE GESTION HOSPITALIER

    E-Print Network [OSTI]

    Boyer, Edmond

    LE SYSTEME D'INFORMATION DE GESTION HOSPITALIER : QUELLES CARACTERISTIQUES PRIVILEGIER POUR'hpital public de court sjour. Abstract: Accounting Management Tools Implementation requires a Management's capabilities to make easier the Accounting Management Tools Implementation in a particular organisation

  16. stampa | chiudi LO DIMOSTRANO LE LORO CONVERSAZIONI, SPIATE DAGLI INGLESI

    E-Print Network [OSTI]

    Bartocci, Claudio

    stampa | chiudi LO DIMOSTRANO LE LORO CONVERSAZIONI, SPIATE DAGLI INGLESI Hitler senza atomica dell'uranio di Hitler, ora finalmente messo a disposizione del lettore italiano dall'editore Sironi (pp

  17. appuyer le developpement: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ces chiffres MERCI DE COMMUNIQUER LES INFORMATIONS DEMANDEES CI-DESSOUS URL du site web de votre:www.lemensuel.net20090610dans-lamazone-du- mercure-le-developpement-cont...

  18. AC transport in p-Ge/GeSi quantum well in high magnetic fields

    SciTech Connect (OSTI)

    Drichko, I. L.; Malysh, V. A.; Smirnov, I. Yu.; Golub, L. E.; Tarasenko, S. A. [A.F. Ioffe Physical Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Suslov, A. V. [National High Magnetic Field Laboratory, Tallahassee, FL 32310 (United States); Mironov, O. A. [Warwick SEMINANO R and D Center, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Knel, H. von [Laboratorium fr Festkrperphysik ETH Zrich, CH-8093 Zrich (Switzerland)

    2014-08-20T23:59:59.000Z

    The contactless surface acoustic wave technique is implemented to probe the high-frequency conductivity of a high-mobility p-Ge/GeSi quantum well structure in the regime of integer quantum Hall effect (IQHE) at temperatures 0.35.8 K and magnetic fields up to 18 T. It is shown that, in the IQHE regime at the minima of conductivity, holes are localized and ac conductivity is of hopping nature and can be described within the two-site model. The analysis of the temperature and magnetic-field-orientation dependence of the ac conductivity at odd filing factors enables us to determine the effective hole g-factor, |g{sub zz}|?4.5. It is shown that the in-plane component of the magnetic field leads to a decrease in the g-factor as well as increase in the cyclotron mass, which is explained by orbital effects in the complex valence band of germanium.

  19. aux propositions Monte Verit Le Congressi Stefano Franscini, plate-

    E-Print Network [OSTI]

    Richner, Heinz

    Appel aux propositions Monte Verità Le Congressi Stefano Franscini, plate- forme de congrès de l'Ecole polytechnique fédérale de Zurich, offre la possibilité d'or- ganiser des conférences de recherche au Monte senior et junior, séjournant au Monte Verità pendant toute la durée de la conférence Le formulaire de

  20. Co silicide formation on SiGeC/Si and SiGe/Si layers R. A. Donatona)

    E-Print Network [OSTI]

    on the total strain energy in the layer and restricts the applications where high Ge concentrations are needed spectrometry, secondary ion mass spectroscopy SIMS , and four point probe for sheet resistance measure- ments

  1. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  2. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  3. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3* University of New South Wales, New South Wales GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen GE3* Denmark Aalborg University, Aalborg

  4. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  5. C-band side-entry Ge quantum-well electroabsorption modulator on SOI

    E-Print Network [OSTI]

    Miller, David A. B.

    C-band side-entry Ge quantum-well electroabsorption modulator on SOI operating at 1 V swing J. Modulation was due to the quantum-confined Stark effect from ten Ge/SiGe quantum wells epitaxially grown the totally internally reflecting air-SiGe interface and a frustrated total internal reflection from

  6. University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE COOLERS

    E-Print Network [OSTI]

    University of California and HRL Laboratories, LLC. All rights reserved. SiGe/Si SUPERLATTICE and characterization of SiGe/Si superlattice coolers are described. Superlattice structures were used to enhance for SiGe/Si superlattice coolers. SiGe is a good thermoelectric material for high temperature

  7. Strain Relaxation of SiGe on Compliant BPSG and Its Applications

    E-Print Network [OSTI]

    Strain Relaxation of SiGe on Compliant BPSG and Its Applications Haizhou Yin A DISSERTATION of SiGe on compliant borophosphosilicate glass (BPSG). Through modeling and experiments it has been shown that strain relaxation in the SiGe film can be induced by lateral expansion and buckling of the SiGe

  8. OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR Xunming Deng

    E-Print Network [OSTI]

    Deng, Xunming

    OPTIMIZATION OF a-SiGe BASED TRIPLE, TANDEM AND SINGLE-JUNCTION SOLAR CELLS Xunming Deng Department cells, all employing high- quality a-SiGe cells, are reviewed in this paper. Incorporating various improvements in device fabrication, the UT group fabricated 1) triple-junction a-Si/a-SiGe/a- SiGe solar cells

  9. SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,*

    E-Print Network [OSTI]

    Papavassiliou, Christos

    SiGe virtual substrate HMOS transistor for analogue applications K. Michelakisa,* , S Abstract Silicongermanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS

  10. SiGe-On-Insulator (SGOI): Two Structures for CMOS Application

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI): Two Structures for CMOS Application Zhiyuan Cheng,a) Jongwan Jung, b Massachusetts Avenue, Cambridge, MA 02141 a) E-mail: cheng@alum.MIT.EDU Abstract Two SiGe-on-insulator (SGOI enhancement on both electron and hole mobilities. Keywords strained-Si, SiGe, SiGe-on-Insulator, SGOI

  11. Revue Prvenir N 40 Travail et sant , 2001 La fatigue, le stress et le travail motionnel de l'infirmire

    E-Print Network [OSTI]

    Boyer, Edmond

    vident lorsque l'on aborde lestressetlafatigue mentale. Dans l'imaginaire infirmier, l mdical et non le soin infirmier; ainsi cette infirmire de pneumologie pdiatrique : La prescription est

  12. Le pilotage des centres de recherche des ples de comptitivit Le cas du centre intgr MIRCen1

    E-Print Network [OSTI]

    Boyer, Edmond

    (Service hospitalier Frdric Joliot), prsent depuis avril 1959 Orsay, NeuroSpin, inaugur en novembre. hal-00320879,version1-11Sep2008 Manuscrit auteur, publi dans "Vers le KM 2.0 : quel management des

  13. Des chercheurs de l'Universit de Genve (UNIGE) ont dcouvert que le tamoxifne, un mdicament utilis de longue date contre le cancer

    E-Print Network [OSTI]

    Halazonetis, Thanos

    plus rsistants aux contractions rptitives et la fatigue. Dans le coeur, par exemple, la brose tamoxifne a rduit la brose tout en augmentant l'paisseur du muscle ainsi que le nombre de bres musculaires

  14. homologuer ces deux facteurs des mutants dj observs chez la Souris domestique. Le premier variant peut tre assimil chinchilla (cch) au locus albinos. Le second peut tre rapproch

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    variant peut tre assimil chinchilla (cch) au locus albinos. Le second peut tre rapproch d litigieux des homozygotes chinchilla ') + +cc" Coh. Le nombre minimum de descendants ayant t fix

  15. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30T23:59:59.000Z

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  16. Background p(450 GeV/c)-p,d (NA51)

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    #12;#12;Background ' Open charm J / Drell-Yan #12;* p(450 GeV/c)-p,d (NA51) 208 16 p(200 Ge) 32 p(450 GeV/c)-A (A=C,Al,Cu,W) (NA38) 10101 10101010 652 3 4 B targetprojectile B(J/)/(AB)(nb) 5 4 3 Pb(208x158 GeV/c)-Pb (NA50) S(32x200 GeV/c)-U (NA38) p(200 GeV/c)-W (NA38) p(450 GeV/c)-A (A=p,d) (NA

  17. Photoluminescence and positron annihilation spectroscopy investigation of (Ge, Er) codoped Si oxides deposited by magnetron sputtering

    SciTech Connect (OSTI)

    Heng, C. L.; Chelomentsev, E.; Peng, Z. L.; Mascher, P. [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada); Simpson, P. J. [Department of Physics and Astronomy, University of Western Ontario, London, Ontario N6A 3K7 (Canada)

    2009-01-01T23:59:59.000Z

    We have investigated the nature of violet-blue emission from (Ge, Er) codoped Si oxides (Ge+Er+SiO{sub 2}) using photoluminescence (PL) and positron annihilation spectroscopy (PAS) measurements. The PL spectra and PAS analysis for a control Ge-doped SiO{sub 2} (Ge+SiO{sub 2}) indicate that Ge-associated neutral oxygen vacancies (Ge-NOV) are likely responsible for the major emission in the violet-blue band. For Ge+Er+SiO{sub 2}, both Ge-NOV and GeO color centers are believed to be responsible for the emission band. The addition of Er has a significant influence on the emission, which is discussed in terms of Er-concentration-related structural change in the Ge+Er+SiO{sub 2}.

  18. Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2

    E-Print Network [OSTI]

    Rokhinson, Leonid

    Valley splitting in Si quantum dots embedded in SiGe S. Srinivasan,1,2 G. Klimeck,1,2 and L. P subband.4 Recently, calculations predicted that valley splitting in nar- row few nanometers SiGe/Si/SiGe that prediction, which has been explained12 by the disorders of the Si/SiGe interface and in the SiGe buffer

  19. Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate

    E-Print Network [OSTI]

    , and SiGe virtual substrate V. K. Yang, S. M. Ting, M. E. Groenert, M. T. Bulsara, M. T. Currie, C. W efficiency of InGaAs quantum wells on Si via SiGe interlayers, identical In0.2Ga0.8As quantum well structures metalorganic vapor deposition system. The substrates used include GaAs, Si, Ge, and SiGe virtual substrates

  20. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  1. Jefferson Lab 12 GeV CEBAF Upgrade

    SciTech Connect (OSTI)

    Claus Rode

    2010-04-01T23:59:59.000Z

    The existing continuous electron beam accelerator facility (CEBAF) at Thomas Jefferson National Accelerator Facility (TJNAF) is a 5-pass, recirculating cw electron Linac operating at ~6 GeV and is devoted to basic research in nuclear physics. The 12 GeV CEBAF Upgrade is a $310 M project, sponsored by the Department of Energy (DOE) Office of Nuclear Physics, that will expand its research capabilities substantially by doubling the maximum energy and adding major new experimental apparatus. The project received construction approval in September 2008 and has started the major procurement process. The cryogenic aspects of the 12 GeV CEBAF Upgrade includes: doubling the accelerating voltages of the Linacs by adding ten new high-performance, superconducting radiofrequency (SRF) cryomodules (CMs) to the existing 42 1/4 cryomodules; doubling of the 2 K cryogenics plant; and the addition of eight superconducting magnets.

  2. S5 0716+714 : GeV variability study

    E-Print Network [OSTI]

    Rani, B; Lott, B; Fuhrmann, L; Zensus, J A

    2013-01-01T23:59:59.000Z

    The GeV observations by Fermi-LAT give us the opportunity to characterize the high-energy emission (100 MeV - 300 GeV) variability properties of the BL Lac object S5 0716+714. In this study, we performed flux and spectral analysis of more than 3 year long (August 2008 to April 2012) Fermi-LAT data of the source. During this period, the source exhibits two different modes of flux variability with characteristic timescales of ~75 and ~140 days, respectively. We also notice that the flux variations are characterized by a weak spectral hardening. The GeV spectrum of the source shows a clear deviation from a simple power law, and is better explained by a broken power law. Similar to other bright Fermi blazars, the break energy does not vary with the source flux during the different activity states. We discuss several possible scenarios to explain the observed spectral break.

  3. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J. [University of Connecticut, JLAB

    2015-01-01T23:59:59.000Z

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Labs Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  4. Spin Structure with JLab 6 and 12 GeV

    SciTech Connect (OSTI)

    Jian-Ping Chen

    2012-02-01T23:59:59.000Z

    Highlights of JLab 6 GeV results on spin structure study and plan for 12 GeV program. Spin structure study is full of surprises and puzzles. A decade of experiments from JLab yield these exciting results: (1) valence spin structure; (2) precision measurements of g{sub 2}/d{sub 2} - high-twist; (3) spin sum rules and polarizabilities; and (4) first neutron transversity. There is a bright future as the 12 GeV Upgrade will greatly enhance our capability: (1) Precision determination of the valence quark spin structure flavor separation; (2) Precision measurements of g{sub 2}/d{sub 2}; and (3) Precision extraction of transversity/tensor charge.

  5. Reducing 68Ge Background in Dark Matter Experiments

    SciTech Connect (OSTI)

    Kouzes, Richard T.; Orrell, John L.

    2011-03-01T23:59:59.000Z

    Experimental searches for dark matter include experiments with sub-0.5 keV-energy threshold high purity germanium detectors. Experimental efforts, in partnership with the CoGeNT Collaboration operating at the Soudan Underground Laboratory, are focusing on energy threshold reduction via noise abatement, reduction of backgrounds from cosmic ray generated isotopes, and ubiquitous environmental radioactive sources. The most significant cosmic ray produced radionuclide is 68Ge. This paper evaluates reducing this background by freshly mining and processing germanium ore. The most probable outcome is a reduction of the background by a factor of two, and at most a factor of four. A very cost effective alternative is to obtain processed Ge as soon as possible and store it underground for 18 months.

  6. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Thorique de la Matire Condense, Universit Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28T23:59:59.000Z

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mssbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mssbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  7. Reflection high-energy electron diffraction evaluation of thermal deoxidation of chemically cleaned Si, SiGe, and Ge layers for solid-source molecular beam epitaxy

    SciTech Connect (OSTI)

    Ali, Dyan; Richardson, Christopher J. K. [Laboratory for Physical Sciences, University of Maryland, College Park, Maryland 20740 (United States)

    2012-11-15T23:59:59.000Z

    The authors present a study on the thermal evolution of the reflection high-energy electron diffraction pattern of chemically cleaned (001)-oriented Si, Ge, and SiGe surfaces, associating observed changes in the reconstructions with the desorption of known residual contaminants for Si and Ge surfaces. The implications of residual oxides prior to epitaxy on stacking fault densities in the grown films are presented. Further evidence for the two-phase nature of oxides on SiGe surfaces is provided, demonstrating that it is necessary to heat a SiGe surface up to the thermal deoxidation temperature of a Si surface to obtain stacking fault-free growth.

  8. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  9. EBIC characterization of strained Si/SiGe heterostructures

    SciTech Connect (OSTI)

    Yakimov, E. B. [Russian Academy of Sciences, Institute of Microelectronics Technology and High-Purity Materials (Russian Federation)], E-mail: yakimov@ipmt-hpm.ac.ru; Zhang, R. H.; Rozgonyi, G. A. [North Carolina State University, Department of Materials Science and Engineering (United States); Seacrist, M. [MEMC Electronic Materials (United States)

    2007-04-15T23:59:59.000Z

    Strained-Si/SiGe heterostructure is studied by EBIC. The effect of annealing at 800 deg. C is investigated. The EBIC images obtained at different beam energies are analyzed. The analysis of images obtained shows that misfit dislocation bunches in the graded SiGe layer could not explain the cross-hatch contrast dependence on E{sub b}. Therefore, at least a part of this contrast should be associated with other defects located closer to the depletion region. It is assumed that dislocation trails could play the role of such defects.

  10. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07T23:59:59.000Z

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following StranskiKrastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  11. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  12. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  13. Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

    SciTech Connect (OSTI)

    Yablonskiy, A. N., E-mail: yablonsk@ipm.sci-nnov.ru; Baidakova, N. A. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Novikov, A. V. [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation)] [Lobachevskyi University of Nizhni Novgorod, Physical-Technical Research Institute (Russian Federation); Lobanov, D. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)] [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2013-11-15T23:59:59.000Z

    The results of a study of the spectral and temporal characteristics of the photoluminescence (PL) from multilayer structures with self-assembled Ge(Si) islands grown on silicon and 'silicon-on-insulator' substrates in relation to temperature and the excitation-light wavelength are presented. A substantial increase in island-related PL intensity is observed for structures with Ge(Si) islands grown on silicon substrates upon an increase in temperature from 4 to 70 K. This increase is due to the diffusion of nonequilibrium carriers from the silicon substrate into the active layer with the islands. In this case, a slow component with a characteristic time of {approx}100 ns appears in the PL rise kinetics. At the same time, no slow component in the PL rise kinetics and no rise in the PL intensity with increasing temperature are observed for structures grown on 'silicon-on-insulator' substrates, in which the active layer with the islands is insulated from the silicon substrate. It is found that absorption of the excitation light in the islands and SiGe wetting layers mainly contributes to the excitation of the PL signal from the islands under sub-bandgap optical pump conditions.

  14. Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers

    SciTech Connect (OSTI)

    Valakh, M. Ya.; Lytvyn, P. M.; Nikolenko, A. S.; Strelchuk, V. V. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv (Ukraine); Krasilnik, Z. F.; Lobanov, D. N.; Novikov, A. V. [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation)

    2010-04-05T23:59:59.000Z

    Raman spectroscopy and atomic-force microscopy were applied to study the morphology of nanoislands grown on strained Si{sub 1-x}Ge{sub x} sublayers. It was shown that the growth of nanoislands on strained Si{sub 1-x}Ge{sub x} sublayer not only induces the effect of their spatial ordering but also enhances the role of interdiffusion processes. Unusual high island volume increase during the epitaxy is explained by anomalous strong material diffusion from the sublayer into the islands, induced by nonuniform field of elastic strains.

  15. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-nergie, Matriaux et Tlcommunications, 1650 boulevard Lionel-Boulet, Varennes Qubec J3X 1S2 (Canada)

    2014-05-28T23:59:59.000Z

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJmol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJmol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  16. JAMUS: Java Accommodation of Mobile Untrusted Software Nicolas Le Sommer and Frdric Guidec

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    JAMUS: Java Accommodation of Mobile Untrusted Software Nicolas Le Sommer and Frdric Guidec VALORIA Laboratory University of South Brittany, France {Nicolas.LeSommer|Frederic.Guidec}@univ-ubs.fr 1

  17. Service Provision in Disconnected Mobile Ad hoc Networks Nicolas Le Sommer

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Service Provision in Disconnected Mobile Ad hoc Networks Nicolas Le Sommer Valoria Laboratory, University of South Brittany Nicolas.Le-Sommer@univ-ubs.fr Abstract With the proliferation of mobiles devices

  18. Napoleon and Other Pimps in Le confessioni d'un italiano

    E-Print Network [OSTI]

    Aversa, Eric

    1994-01-01T23:59:59.000Z

    Napoleon and Other Pimps in Le confessioni d^un italiano Into when they can be shown NAPOLEON AND OTHER PIMPS IN LEficcatimi di mio padre, NAPOLEON AND OTHER PIMPS IN LE

  19. Repres rapides pour dbuter avec MsOffice 2007 Le logo identificateur de

    E-Print Network [OSTI]

    Skorobogatiy, Maksim

    Repres rapides pour dbuter avec MsOffice 2007 Le logo identificateur de l'application cache des menus... Il faut cliquer sur le logo pour avoir accs aux icnes ouvrir, enregistrer, etc. #12;Les

  20. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01T23:59:59.000Z

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  1. Nucleon Form Factors experiments with 12 GeV CEBAF

    SciTech Connect (OSTI)

    Wojtsekhowski, Bogdan

    2008-11-01T23:59:59.000Z

    A number of precision form factor experiments at high momentum transfer will be performed with the 11 GeV electron beam of CEBAF. We review the approved proposals and the conceptual schemes of several new suggestions. Form factor data will serve as a major input for the construction of a tomographic image of the nucleon.

  2. GeV C. W. electron microtron design report

    SciTech Connect (OSTI)

    Not Available

    1982-05-01T23:59:59.000Z

    Rising interest in the nuclear physics community in a GeV C.W. electron accelerator reflects the growing importance of high-resolution short-range nuclear physics to future advances in the field. In this report major current problems are reviewed and the details of prospective measurements which could be made with a GeV C.W. electron facility are discussed, together with their impact on an understanding of nuclear forces and the structure of nuclear matter. The microtron accelerator has been chosen as the technology to generate the electron beams required for the research discussed because of the advantages of superior beam quality, low capital and operating cost and capability of furnishing beams of several energies and intensities simultaneously. A complete technical description of the conceptual design for a 2 GeV double-sided C.W. electron microtron is presented. The accelerator can furnish three beams with independently controlled energy and intensity. The maximum current per beam is 100 ..mu..amps. Although the precise objective for maximum beam energy is still a subject of debate, the design developed in this study provides the base technology for microtron accelerators at higher energies (2 to 6 GeV) using multi-sided geometries.

  3. Structural Changes in Vitreous GeSe4 under Pressure

    SciTech Connect (OSTI)

    Skinner L. B.; Parise J.; Benmore, C.J,; Antao, S.; Soignard, E.; Amin, S.A.; Bychkov, E.; Rissi, E. and Yarger, J.L.

    2011-11-21T23:59:59.000Z

    High-energy X-ray diffraction experiments have been performed on GeSe{sub 4} glass up to pressures of 8.6 GPa, and the equation of state has been measured up to 10 GPa. The X-ray structure factors reveal a decrease in the first sharp diffraction peak intensity and broadening with pressure, which signifies a break-up of the intermediate range order in the glass. In contrast, the principal peak in the structure factor shows an increase in intensity and a sharpening with pressure, which is attributed to an increase in extended range order and coherence of the compacted units. The average nearest neighbor coordination number is found to remain constant in GeSe{sub 4} glass (within experimental error) over the pressure range measured. This is in contrast with the gradual increase found in GeSe{sub 2} glass. Rather, in GeSe{sub 4} glass the densification mechanism is shown to be associated with large inward shifts of the second neighbor and higher coordination shells. These features appear as additional correlations at 3.3 and 5.3 {angstrom} in the differences taken between adjacent pair distribution functions with increasing pressure.

  4. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H. [JLAB

    2013-12-01T23:59:59.000Z

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  5. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01T23:59:59.000Z

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation Brillion-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in Standard electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in Heat Pump mode to provide the comparison to heat pump-only demand response. It is expected that Hybrid DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  6. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics Participants Project Sponsors: DOE Building America Program/Bonneville Power Administration Contractor: PNNL

  7. Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates

    E-Print Network [OSTI]

    Teherani, James T.

    Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantum-mechanical ...

  8. Le hakka, par Hilary Chappell et Laurent Sagart Le dialecte hakka est parl par quelque 35 millions de locuteurs, principalement dans le nord du

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    répandu hors de Chine, en particulier en Malaisie, dans le nord de Bornéo, en Guyane, au Surinam et à ont pu entraîner une forte animosité avec les populations chinoises plus anciennement établies. Cette («Puntis») dans la province de Canton. Méprisés par la société cantonaise, et assimilés aux She, population

  9. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07T23:59:59.000Z

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamondcubic lattice.

  10. Resource Management for Parallel Adaptive Components Luc Courtrai, Frdric Guidec, Nicolas Le Sommer, Yves Maho

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Sommer, Yves Maho VALORIA, Universit de Bretagne-Sud, France {Luc.Courtrai Frederic.Guidec Nicolas.Le-Sommer

  11. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4017

    E-Print Network [OSTI]

    Di Girolami, Cristina

    administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE RESPONS. POLE GESTION ADMINISTRATIVE/PAY 02

  12. Le profil dtaill se trouve en page 2 et suivantes UNIVERSITE DU MANS Rfrence GALAXIE : 4027

    E-Print Network [OSTI]

    Di Girolami, Cristina

    administratif : N de tlphone : N de Fax : Email : LE TOUX DENISE RESPONS. POLE GESTION ADMINISTRATIVE/PAY 02

  13. Thse prsente pour obtenir le grade de DOCTEUR DE L'ECOLE POLYTECHNIQUE

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    beaucoup plus souvent. Franois Ozanam et Marcel Filoche pour m'avoir accueilli dans le laboratoire dont

  14. L'cotourisme dans le parc national de Souss Massa -Maroc

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 L'écotourisme dans le parc national de Souss Massa - Maroc Rachid HARIF, François LAURENT et naturels, de sa faune et de sa flore remarquables, le parc national de Souss Massa, dans le sud du Maroc, ce parc national a été le premier parc au Maroc à s'ouvrir à l'écotourisme. Il représente par

  15. Introduction Le probl`eme d'ordonnancement sous contraintes d'energie

    E-Print Network [OSTI]

    Ingrand, François

    Plan Introduction Le probl`eme d'ordonnancement sous contraintes d'´energie Condition n´ecessaire d'existence : le raisonnement ´energ´etique Ensemble dominants d'intervalles et complexit´e de la CN Ordonnancement Introduction Le probl`eme d'ordonnancement sous contraintes d'´energie Condition n´ecessaire d'existence : le

  16. Etude cologique en immunofluorescence de Rhizobium japonicum dans le sol et la rhizosphre

    E-Print Network [OSTI]

    Boyer, Edmond

    'une association efficiente entre la plante hte et la bactrie du genre Rhizobium. Lorsque le Rhizobium est absent

  17. Une petite histoire de l'ide de Explication gnalogique du cosmos par le mythe

    E-Print Network [OSTI]

    Giraud, Olivier

    gonflent et s'agitent. D'elle et d'Ouranos naquirent le profond Ocan, Coeus, Crios, Hyprion, Japet

  18. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26T23:59:59.000Z

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent IIVI, IIIV and IVVI semiconductor quantum dots. Here, we use relatively unexplored IV/IIVI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial IIVI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/IIVI nanocrystals are reproducibly 13 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/IIVI nanocrystals. We expect this synthetic IV/IIVI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  19. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  20. Louvain-la-Neuve, le 11 avril 2012 Enseignement UCL

    E-Print Network [OSTI]

    Nesterov, Yurii

    , appliqué par l'EPL depuis plus de dix ans. C'est d'un exemple français qu'Abdou Kouider Ben (presse) ? Abdou Kouider Ben-Naoum, professeur au pôle en ingénierie mathématique de l'UCL : 010 47 80 03

  1. Digestion des glucides chez le monogastrique Martine CHAMP

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Digestion des glucides chez le monogastrique Martine CHAMP Laboratoire de Techno%gie des Aliments des Animaux, /. N. R.A., Rue de la Graudire, 44072 Nantes Cedex. Summary. Carbohydrate digestion digested in the small intestine of monogastric animals by enzymes of the salivary glands, pancreas

  2. Quand le charbon nettoie Utilisation de l'adsorption

    E-Print Network [OSTI]

    Lige, Universit de

    Quand le charbon nettoie Utilisation de l'adsorption Cdric Gommes, Alain Brasseur, Ren Pirard'air des premiers sous-marins. Silo Chemine Filtration Incinrateur Racteur d 'adsorption Les fumes des.. Afin d 'viter de rejeter ces molcules dans l'environnement un racteur d'adsorption est utilis. Les

  3. Good Architecture = Good (ADL + Practices) Vincent Le Gloahec

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Good Architecture = Good (ADL + Practices) Vincent Le Gloahec 1,3 , Regis Fleurquin 2 , and Salah of the software architecture. We treat rst the case of architecture design activity because it's the basis from the context of our indus- trial partner. Key words: Best Practices, Design, Software Architecture

  4. se de doctorat en informatique Comprendre le Web cach

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    niveau à l'aide de telles descriptions. Abstract e hidden Web (also known as deep or invisible Web'informations, complexité Keywords: hidden Web, deep Web, databases, information extraction, complexity tel-00198150,versionèse de doctorat en informatique Comprendre le Web caché Understanding the Hidden Web Pierre

  5. Activit bolomtres pour le 30m Pico Veleta

    E-Print Network [OSTI]

    Leclercq, Samuel

    Activité bolomètres pour le 30m à Pico Veleta Samuel Leclercq Journal-club IRAM 13/06/07 #12;Menu = puissance si faible que plusieurs sources apparaissent au même endroit · Bruit thermodynamique (Johnson

  6. Le Thorium Molten Salt Reactor : Au del du MSBR

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    Le Thorium Molten Salt Reactor : Au del du MSBR L. Mathieu, D. Heuer, A. Billebaud, R. Brissot, C rflexion est mene afin de trou- ver des solutions et ainsi d'aboutir au concept du Thorium Mol- ten Salt optimale du minerai d'uranium ou de thorium, une conception rsistante la prolifration, une meilleur

  7. Precise Dynamic Verification of Noninterference Gurvan Le Guernic

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Precise Dynamic Verification of Noninterference Gurvan Le Guernic INRIA-MSR - Parc Orsay Universit analysis is used to analyze some un- executed pieces of code in order to take into account all types is that nowadays it is nearly impossible for consumers to prevent the execution of "bad" code on their devices

  8. Leadership and Learning are indispensabLe to each other.

    E-Print Network [OSTI]

    Hutcheon, James M.

    Leadership and Learning are indispensabLe to each other. -John F. Kennedy Eagle Leadership Program The Eagle Leadership Program is an 11-month leadership course designed for faculty and staff and led's divisional vice presidents for their dedication, leadership skills and potential professional growth

  9. Molten salts and nuclear energy production Christian Le Bruna*

    E-Print Network [OSTI]

    Boyer, Edmond

    Molten salts and nuclear energy production Christian Le Bruna* a Laboratoire de Physique or chlorides) have been taken in consideration very soon in nuclear energy production researches, thorium cycle 1. Introduction The main characteristic of nuclear energy production is the large energy

  10. Graphene Enhanced Wireless Sensors Taoran Le, Trang Thai, Vasileios Lakafosis,

    E-Print Network [OSTI]

    Tentzeris, Manos

    Graphene Enhanced Wireless Sensors Taoran Le, Trang Thai, Vasileios Lakafosis, Manos Tentzeris utilizing both analog and digital principles. The sensors will utilize Graphene-based thin films integrated. Our thin films are produced from water-based, inkjet printed graphene oxide (GO) on paper

  11. LE CONTROLE DE GESTION EN MILIEU HOSPITALIER : UNE

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    LE CONTROLE DE GESTION EN MILIEU HOSPITALIER : UNE REPONSE A L'EMERGENCE DE RISQUES)product-based risk ; 2) procedure-based risk ; 3) individual-based risk. Management controls appears, risques organisationnels, relations interpersonnelles. Keywords : management control, organisational risks

  12. LES OUTILS DE CONTROLE DE GESTION DANS LE CONTEXTE DES

    E-Print Network [OSTI]

    Boyer, Edmond

    LES OUTILS DE CONTROLE DE GESTION DANS LE CONTEXTE DES PME : CAS DES PMI AU LIBAN Numro d diffrents outils de contrle de gestion utiliss dans les PMI libanaises et plus prcisment, d gestion outil de contrle calcul de cot Key words: SME - management control - cost control

  13. LE CONTROLE DE GESTION DANS LES FUSIONS-ACQUISITIONS

    E-Print Network [OSTI]

    Boyer, Edmond

    1 LE CONTROLE DE GESTION DANS LES FUSIONS-ACQUISITIONS INTERNATIONALES : UN OUTIL D'INTEGRATION ? Ludivine Chalenon Doctorante en Sciences de Gestion (titulaire d'un contrat doctoral) Centre de recherche contrle de gestion peut constituer un pivot pouvant freiner mais galement aider la runion des entits

  14. Prsente pour obtenir le grade de L'UNIVERSIT PARISEST

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    modeling of transport and freezing phenomena within unsaturated porous media Soutenue le 23 septembre 2013. This thesis deals with the transport properties and then the freezing behaviors of unsaturated porous media Prsente par : Rongwei YANG Sujet de la thse : Contributions la modlisation micromcanique du transport

  15. Experimenting with Shu le Block Cipher and SMT Martin Stanek

    E-Print Network [OSTI]

    Experimenting with Shu le Block Cipher and SMT Solvers Martin Stanek Department of Computer Science, and we call it the Shu e Block Cipher. We show how the cipher can be translated into SMT-LIB v2 format, suitable for automated solving by SMT solvers. We compare performance of various SMT solvers

  16. Cartographie web : comment construire le lien entre territoire et consommateur ?

    E-Print Network [OSTI]

    Boyer, Edmond

    formes de cohabitation remarquable entre la nature et l'homme et c'est pourquoi ils ont naturellement habitants. Ils sont le refuge d'une viticulture de petite taille, garante d'une biodiversité viticole grâce à la persistance de cépages autochtones. S'ils sont attractifs et producteurs de ressources, ces

  17. Controlled cavitation in microfluidics Severine Le Gac,2

    E-Print Network [OSTI]

    Ohl, Claus-Dieter

    Controlled cavitation in microfluidics Ed Zwaan,1 S´everine Le Gac,2 Kinko Tsuji,3 and Claus-Hahn-Strasse 6-10, D-47269 Duisburg, Germany. (Dated: February 20, 2007) We report on cavitation in confined microscopic environments which are commonly called microfluidic or lab-on-a-chip systems. The cavitation

  18. Pisa Dependable Computing Ente Per le Nuove Tecnologie,

    E-Print Network [OSTI]

    Firenze, Universit degli Studi di

    in questa famiglia le FMEA (Failure Mode Effect Analysis). La seconda contiene i metodi che proce- dendo sistema al livello dei componenti. I fault-tree rappresentano un tipico esempio di tali metodi. 2.1 FMEA La FMEA una tecnica induttiva il cui principio fondamentale l'analisi, per ogni componente, degli

  19. Adsorption of alkali metals on Ge(001)(21) surface. |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    alkali metals on Ge(001)(21) surface. Adsorption of alkali metals on Ge(001)(21) surface. Abstract: Ab initio total energy calculations have been performed for Na, K...

  20. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  1. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  2. GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd...

    Open Energy Info (EERE)

    GE Hydro Asia Co Ltd formerly Kvaerner Power Equipment Co Ltd Kvaerner Hangfa Jump to: navigation, search Name: GE Hydro Asia Co Ltd (formerly Kvaerner Power Equipment Co., Ltd...

  3. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    group-IV-based dilute magnetic semiconductors by electronicMn x Ge 1-x dilute magnetic semiconductor, Applied Physicsamorphous Ge 1-x Mn x magnetic semiconductor films, Journal

  4. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source atDOE's Argonne...

  5. 6 GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GeV LIGHT SOURCE PROJECT COST ESTIMATING PROCEDURE LS-34 October 23, 1985 YCAVR To maintain uniformity in estimating the cost requirements of the various components of the 6 GeV...

  6. $J/?$, $?(2S)$ Production in pp Collisions at E=510 GeV

    E-Print Network [OSTI]

    Leonard S. Kisslinger; Debasish Das

    2014-10-06T23:59:59.000Z

    This brief report is an extension of studies of $J/\\Psi,\\Psi(2S)$ production in pp collisions at the BNL with E=$\\sqrt{s}$=200 GeV to E=510 GeV at PHENIX.

  7. Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group

    E-Print Network [OSTI]

    Saffman, Mark

    Postdoctoral Positions: Si/SiGe Quantum Dots and Quantum Computing Eriksson Group Department in the area of Si/SiGe quantum dots and quantum computing. Recent advances in our group include single

  8. Temperature dependent metal-induced lateral crystallization of amorphous SiGe on insulating substrate

    SciTech Connect (OSTI)

    Kanno, Hiroshi; Toko, Kaoru; Sadoh, Taizoh; Miyao, Masanobu [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)

    2006-10-30T23:59:59.000Z

    Metal-induced lateral crystallization (MILC) of amorphous SiGe films on SiO{sub 2} has been investigated as a function of Ge fraction (0%-100%) and annealing temperature (320-550 deg. C). High temperature annealing (>500 deg. C) caused spontaneous nucleation in amorphous SiGe with a high Ge fraction (>70%). This suppressed the progress of MILC. Spontaneous nucleation was significantly suppressed by lowering the annealing temperature (<400 deg. C). As a result, large poly-SiGe regions (>20 {mu}m) were observed around Ni patterns even for high Ge fractions (>70%). In this way, MILC of amorphous SiGe was achieved for samples with whole Ge fractions (0%-100%)

  9. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01T23:59:59.000Z

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  10. Electron Backscatter Diffraction of a Ge Growth Tip from a Vertical...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of a Ge Growth Tip from a Vertical Gradient Freeze Furnace. Electron Backscatter Diffraction of a Ge Growth Tip from a Vertical Gradient Freeze Furnace. Abstract: The growth-tip...

  11. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01T23:59:59.000Z

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  12. SiGe HBT linear-in-dB high dynamic range RF envelope detectors and wideband high linearity amplifiers

    E-Print Network [OSTI]

    Pan, Hsuan-yu

    2010-01-01T23:59:59.000Z

    1.1 SiGe BiCMOS Technology . . . . . . .A Linear-in-dB SiGe HBT Wideband High Dynamic Range RFpower dissapation trade-off between Si BJTs and SiGe HBTs [

  13. LeTemps.ch I Des robots pour mieux comprendre l,volution 08011217:49

    E-Print Network [OSTI]

    Alvarez, Nadir

    LeTemps.ch I Des robots pour mieux comprendre l,volution LE TEMPs 08011217:49 biologie Vendredi6 janvier 2012 Des robots pour mieux comprendre l'6volution Par L'aldatoire entrerait en jeu Le d6'y parvenir en employant comme cobayes... des robots. Etude qu,ils publient cette semaine dans une

  14. Louvain-la-Neuve, le 27 janvier 2011 Hunza ! : images du Pakistan, par Benoit Sneessens

    E-Print Network [OSTI]

    Nesterov, Yurii

    Louvain-la-Neuve, le 27 janvier 2011 Hunza ! : images du Pakistan, par Benoit Sneessens Du 1er trois ans, l'artiste a parcouru pieds les sentiers escarps de la valle de Hunza, au Nord du Pakistan reportages l'tranger, s'envole pour le Pakistan. Le but de son expdition : confronter l'image du pays

  15. Nicolas Forcadel, Carole Le Guyader and Christian Gout Generalized Fast Marching Method

    E-Print Network [OSTI]

    Soatto, Stefano

    Nicolas Forcadel, Carole Le Guyader and Christian Gout Generalized Fast Marching Method,4 Carole Le Guyader, 5,6,7 Christian Gout Running title: GFMM: Applications to Image Segmentation@cemrics.enpc.fr, chris gout@cal.berkeley.edu, carole.le-guyader@insa-rennes.fr Abstract. In this paper, we propose

  16. STRUCTURE DE BANDES DES CRISTAUX DE TYPE WURTZITE TRANSITIONS OPTIQUES INTRINSQUES DANS LE CdS.

    E-Print Network [OSTI]

    Boyer, Edmond

    825. STRUCTURE DE BANDES DES CRISTAUX DE TYPE WURTZITE TRANSITIONS OPTIQUES INTRINSQUES DANS LE Cd Brillouin pour des cristaux de type wurtzite est dduite des considrations de la thorie des groupes. Le Cd d'excitons. Un second article traite le problme de l'exciton dans les cristaux de type wurtzite

  17. FABRICATION ET TUDE D'UN MONOCRISTAL DE VORTEX DANS LE NIOBIUM SUPRACONDUCTEUR

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    447 FABRICATION ET TUDE D'UN MONOCRISTAL DE VORTEX DANS LE NIOBIUM SUPRACONDUCTEUR P. THOREL. 2014 Nous tudions exprimentalement par diffraction de neutrons le rseau de vortex dans le niobium ce V-cristal est lie celle des axes cristallins du niobium, tant donn la forte anisotropie des

  18. LE CADRE DE SANTE ENTRE LOGIQUES D'UTILITE ET LOGIQUES DE SOINS HOSPITALIERS

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    valorisation des cadres hospitaliers avec pour objectif: Le renforcement du management hospitalier La1 LE CADRE DE SANTE ENTRE LOGIQUES D'UTILITE ET LOGIQUES DE SOINS HOSPITALIERS Rsum : Le cadre de sant hospitalier ralise, au niveau d'un service, l'ensemble des missions d'organisation de l

  19. Du budget administratif au budget outil de gestion. Le cas des muses franais*

    E-Print Network [OSTI]

    Boyer, Edmond

    1 Du budget administratif au budget outil de gestion. Le cas des muses franais* Stphanie : Stephanie.Chatelain@u-picardie.fr Rsum : Le muse moderne accde au statut d'institution dont la gestion contraintes, trouve sa place dans le contrle de gestion. Pour prendre en compte la nouvelle problmatique

  20. Sur le rapport isoperimetrique du tetra`edre par Jean-Pierre Demailly

    E-Print Network [OSTI]

    Demailly, Jean-Pierre

    Sur le rapport isop´erim´etrique du t´etra`edre par Jean-Pierre Demailly Professeur `a l triangle ABC, comment choisir le quatri`eme sommet D de fa¸con que le rapport isop´erim´etrique du t´etra`edre´egalit´es contradictoires 0 = - µ + edre

  1. LE BULLETIN DE L'EPI N 38 DMARRER EN LOGO DMARRER EN LOGO

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    81 LE BULLETIN DE L'EPI N 38 DMARRER EN LOGO DMARRER EN LOGO Philippe BRIZEMUR Il parait vident que LOGO est le langage le mieux adapt l'apprentissage de la programmation par les enfants. Sans les promoteurs ne me paraissent pas aussi videntes, LOGO possde des avantages dterminants par

  2. Ris-M-2737 ' / > ^ ' ' . / , / -THE PHASES OF Pb/Ge(lll)

    E-Print Network [OSTI]

    #12;Ris-M-2737 ' / > ^ ' ' . / , / - THE PHASES OF Pb/Ge(lll): A SURFACE X-RAY DIFFRACTION STUDY of a chemisorbed overlayer of Pb on the Ge(lll) surface. Three phases of Pb/Ge(lll) exist in the monolayer regime: the a- and B-phases with a V3xV3R30 unit cell, and a high-temperature IX1 phase. In the 1X1 phase of Pb/Ge

  3. Directional correlation of [gamma] transitions in [sup 72]Ge following the decay of [sup 72]Ga

    SciTech Connect (OSTI)

    Landulfo, E.; Saxena, R.N.; Zamboni, C.B.; Lapolli, A.L. (Instituto de Pesquisas Energeticas e Nucleares, IPEN-Comissao Nacional de Energia Nuclear de Brasil, Sao Paulo, Sao Paulo (Brazil))

    1994-08-01T23:59:59.000Z

    Directional correlations of coincident gamma transitions in [sup 72]Ge have been measured following the [beta][sup [minus

  4. MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS , J. Liang1

    E-Print Network [OSTI]

    Suo, Zhigang

    MECHANICS OF RELAXING SiGe ISLANDS ON A VISCOUS GLASS R. Huang1 , H. Yin2 , J. Liang1 , J.C. Sturm2, a SiGe thin film, a glass layer, and a Si wafer. The SiGe film is a perfect crystal, and is under biaxial compression. Pattern the SiGe film into islands. On annealing, the glass flows and the islands

  5. Why is GeV physics relevant in the age of the LHC?

    SciTech Connect (OSTI)

    Pennington, Michael R. [JLAB

    2014-02-01T23:59:59.000Z

    The contribution that Jefferson Lab has made, with its 6 GeV electron beam, and will make, with its 12 GeV upgrade, to our understanding of the way the fundamental interactions work, particularly strong coupling QCD, is outlined. The physics at the GeV scale is essential even in TeV collisions.

  6. 2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a

    E-Print Network [OSTI]

    Athens, University of

    2D-GE IMAGE SEGMENTATION BASED ON LEVEL-SETS E.A. Mylona a , M.A. Savelonas a , D. Maroulis a , M of protein spots in 2D-GE images. The proposed scheme incorporates a protein spot detection stage based both software packages in terms of segmentation performance. Index Terms--2D-GE Images, Protein Spot

  7. Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on

    E-Print Network [OSTI]

    Gao, Hongjun

    Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on the Si(1 1 1)-(7 7-assembled growth of submonolayer Ge on the Si(1 1 1)-(7 7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition

  8. Distinct local electronic structure and magnetism for Mn in amorphous Si and Ge

    E-Print Network [OSTI]

    Zeng, Li

    2010-01-01T23:59:59.000Z

    Mn-Si (red squares) and Mn-Ge distances (blue circles) d asof the number of Si or Ge nearest neighbours N c ; (c) localthree Mn atoms with different N c in a-Mn 0.094 Ge 0.906 .

  9. Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays

    E-Print Network [OSTI]

    Javey, Ali

    Black Ge Based on Crystalline/Amorphous Core/Shell Nanoneedle Arrays Yu-Lun Chueh,,,|,# Zhiyong, ROC ABSTRACT Direct growth of black Ge on low-temperature substrates, including plastics and rubber is reported. The material is based on highly dense, crystalline/amorphous core/shell Ge nanoneedle arrays

  10. Defects in Ge and Si caused by 1 MeV Si+ implantation*

    E-Print Network [OSTI]

    Florida, University of

    Defects in Ge and Si caused by 1 MeV Si+ implantation* D. P. Hickeya Department of Materials defect formation and evolution in the 001 Ge and Si wafers implanted with 1 MeV Si+ and 40 keV Si dissolve at the projected range for nonamorphizing implants into Si. However, in Ge, no 311 defect

  11. Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature

    E-Print Network [OSTI]

    Gao, Hongjun

    Formation of Ge nanoclusters on Si(1 1 1)-7 7 surface at high temperature H.M. Guo, Y.L. Wang, H for publication 17 May 2004 Available online 5 June 2004 Abstract We report on Ge nanocluster formation on Si(1 1 of the Ge clusters are more uniform than those obtained at room temperature due to an increase

  12. Transistor-Based Ge/SOI Photodetector for Integrated Silicon Photonics

    E-Print Network [OSTI]

    Luo, Xi

    2011-01-01T23:59:59.000Z

    11. Y. -H. Kuo, Y. -K. Lee, Y. Ge, S. Ren, J. E. Roth, T. I.Colace and G. Assanto, Poly-Ge Near-infrared PhotodetectorsMasini and G. Assanto, Ge on Si p-i-n photodiodes operating

  13. Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping

    E-Print Network [OSTI]

    Rommel, Sean

    Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick and A. Lochtefeld A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2

  14. Materials synthesis and investigation of itinerant ferromagnetism in the UCo?-xFex Ge system

    E-Print Network [OSTI]

    Huang, Kevin

    2009-01-01T23:59:59.000Z

    B. UCo 1?x Fe x Ge . . . . . . . . . . . . . 1. Polycrystalvs temperature data of UCo 1?x Fe x Ge from x = 0.0 to x =vs temperature data of UCo 1?x Fe x Ge from x = 0.20 to x =

  15. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition. Kassem Ilmenau (Germany) Abstract. In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface

  16. Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells

    E-Print Network [OSTI]

    Room-temperature 1.3 pm electroluminescence from strained Si, -,Ge,/Si quantum wells Q. Mi, X. Xiao report the first room-temperature 1.3 ,um electroluminescence from strained Sir-,Ge,/Si quantum wells to that from the Sit-,GeX wells. A minimum band offset is required to have effective room

  17. GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 8, Feb 2013, JC Program Extension General English English (GE) Academic English (AE) 2. Which term will this extension begin? Fall Winter Spring Summer 3 of General English do you wish to request? 1 2 3 4 5 6 (GE sessions are 5 weeks) How many General English

  18. Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic Field Laboratory

    E-Print Network [OSTI]

    Weston, Ken

    Coexisting Superconductivity and Magnetism in UCoGe Gregory S. Boebinger, National High Magnetic focused on the coexistence of superconductivity and ferromagnetism, including UGe2, URhGe, and UCoGe. In these materials, superconductivity develops below the ferromagnetic Curie temperature TC without destroying

  19. Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates

    E-Print Network [OSTI]

    Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates V. K. Yang, MAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model10 Relaxed SiGe graded layers on Si have produced the highest quality GaAs on Si to date for the integration

  20. \\Development, implementation and veri cation of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Paper I \\Development, implementation and veri#12;cation of a physics-based Si/SiGe HBT model and verification of a physicsbased Si/SiGe HBT model for millimeterwave non linear circuit simulations. S. Bruce thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects

  1. EVOLUTION OF SELF-INTERSTITIALS INDUCED BY ION-IMPLANTATION IN SiGe ALLOYS

    E-Print Network [OSTI]

    Florida, University of

    EVOLUTION OF SELF-INTERSTITIALS INDUCED BY ION-IMPLANTATION IN SiGe ALLOYS By ROBERT T. CROSBY and Astronomy at the University of Aarhus in Denmark provided the utmost quality SiGe structures for my {311 great colleague, supervisor, and friend) grew the B-doped SiGe structures. J. Liu of Varian

  2. High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

    E-Print Network [OSTI]

    1 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Zhonghe as the gate insulator for low temperature (SiGe thin film transistors (TFTs) has been between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative

  3. Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator

    E-Print Network [OSTI]

    Huang, Zhaoran "Rena"

    Design of a 250-Gbit/s SiGe HBT Electrooptic Modulator Volume 3, Number 5, October 2011 Tuhin Guha.1109/JPHOT.2011.2169658 1943-0655/$26.00 2011 IEEE #12;Design of a 250-Gbit/s SiGe HBT Electrooptic: We present a rigorous electrical and optical analysis of a highly scaled, graded- base, SiGe

  4. SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers

    E-Print Network [OSTI]

    Bowers, John

    SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers Department of Electrical 95064 *Corresponding Email: ali@soe.ucsc.edu, phone: (831) 459-3821 Abstract SiGe is one of the best selective emission of hot electrons through thermionic emission. SiGe/Si superlattice structures were grown

  5. Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a)

    E-Print Network [OSTI]

    Simulation of Si/SiGe Micro-Cooler by Thermal Quadrupoles Method Y. Ezzahri *(a) , S. Dilhaire (a on thermal quadrupoles is presented to model the behavior of a single stage Si/SiGe micro-cooler in AC of the model with experimental reflectometry techniques is also presented. Performance of Si/SiGe micro

  6. SiGe HBT Nonlinear Phase Noise Modeling Sebastien Gribaldo, Laurent Bary and Olivier Llopis

    E-Print Network [OSTI]

    Paris-Sud XI, Universit de

    SiGe HBT Nonlinear Phase Noise Modeling Sebastien Gribaldo, Laurent Bary and Olivier Llopis LAAS model of a SiGe bipolar transistor is presented. This model includes nonlinear noise sources and is able phase noise data at different RF power level. Keywords: nonlinear noise, modelling, SiGe PACS: 85.40.Qx

  7. Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates

    E-Print Network [OSTI]

    Dynamics of uniform Si/SiGe uniaxial strain generation on compliant insulating substrates R. L on the relaxation of Si/SiGe bilayers of different geometries to obtain up to 1.0% uniaxial tensile strain in silicon and 1.5 GPa uniaxial compressive stress in SiGe [1,2]. The process generates uniform uniaxially

  8. Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation

    E-Print Network [OSTI]

    Allen, Leslie H.

    Si/SiGe modulation-doped structures with thin buffer layers: Effect of substrate orientation G. L and Nomarski microscopy. In n-type modulation-doped Si-SiGe structures, the band structure is type II where SiGe layer, generally on top of the strained Si, is intentionally doped leaving the adjacent Si layer

  9. Development, implementation and verification of a physicsbased Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physicsbased Si/SiGe HBT model for millimeter Abstract A physicsbased largesignal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  10. Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    1 Evaluation of the Radiation Tolerance of Several Generations of SiGe Heterojunction Bipolar. The devices investigated were first, second and third-generation Silicon- Germanium (SiGe) Heterojunction-engineered SiGe technology [1] have potential advantages when compared with Complementary Metal Oxide

  11. IEEE BCTM1.3 Explorations for High Performance SiGe-HeterojunctionBipolar

    E-Print Network [OSTI]

    Technische Universiteit Delft

    IEEE BCTM1.3 Explorations for High Performance SiGe-HeterojunctionBipolar Transistor Integration P.Deixler@philips.com,Phone: -1 505 858 2960 Abstract We present a SiGe HBT integration-study, introducing a low-complexity integration-scheme. We demonstrate a stepped box-like SiGe base-profile designed to reduce reverse Early

  12. Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice

    E-Print Network [OSTI]

    Yang, Peidong

    Letters Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires Yiying Wu, Rong-defined compositional profile along the wire axis. Single-crystalline nanowires with longitudinal Si/SiGe superlattice-crystalline nano- wires with Si/SiGe superlattice structure are obtained and thoroughly characterized using

  13. Thermionic power generation at high temperatures using SiGe/Si superlattices

    E-Print Network [OSTI]

    Thermionic power generation at high temperatures using SiGe/Si superlattices Daryoosh Vashaeea of SiGe/Si superlattices for power generation at high temperatures. A detailed theory based on Boltzmann provides only a modest improvement in the power factor. This is due to the fact that SiGe is a multivalley

  14. Plasma process-induced band-gap modifications of a strained SiGe heterostructure

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Plasma process-induced band-gap modifications of a strained SiGe heterostructure P. K. Swain,a) S the strain of coherently strained SiGe. This work investigates the change in valence-band discontinuity in plasma-exposed SiGe films due to strain relaxation by a capacitancevoltage (CV) profiling technique

  15. IBM Systems and Technology IBM SiGe 5PAe and

    E-Print Network [OSTI]

    IBM Systems and Technology IBM SiGe 5PAe and 1KW5PAe technologies Keep pace with mobile advances SiGe offerings featuring copper pillar and through-silicon-via options Take advantage of ongoing to solutions based on gallium arsenide (GaAs) technology, for example, the IBM SiGe 5PAe family offers several

  16. SiGe integrated circuits for millimeter-wave imaging and phased arrays

    E-Print Network [OSTI]

    May, Jason W.

    2009-01-01T23:59:59.000Z

    48 Chapter 4 SiGe W-Band RFIC Components . . . 4.1 W-Bandarray beamformer in 0.18- m SiGe BiCMOS technology. Thetotal power radiometer with SiGe LNA + Detec- tor, (b)

  17. Measurementof Seebeck coefficient perpendicular to SiGe superlattice , Gehang Zeng2

    E-Print Network [OSTI]

    Page 1 Measurementof Seebeck coefficient perpendicular to SiGe superlattice Yan Zhang1 , Gehang to measure the Seebeck coefficient of SiGe superlattice material perpendicular to the layers1 . Successful of the SiGe superlattice micro coolers. Extensive thermoreflectance imaging characterization was performed

  18. Development, implementation and verification of a physics-based Si/SiGe

    E-Print Network [OSTI]

    Development, implementation and verification of a physics-based Si/SiGe HBT model for millimeter Abstract A physics-based large-signal model including thermal dependence has been developed for Si/SiGe HBTs. The model takes into account several effects that are important for the operation of Si/SiGe HBTs

  19. Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient thermoreflectance technique

    E-Print Network [OSTI]

    Study of thermomechanical properties of Si/SiGe superlattices using femtosecond transient the thermomechanical properties of two Si/SiGe superlattices. A theoretical model is presented which agrees well-lattice vectors is smaller.8 In the experiments reported here we have applied a FTT technique to study two Si/SiGe

  20. P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1

    E-Print Network [OSTI]

    P-type SiGe/Si Superlattice Cooler Xiaofeng Fan, Gehong Zeng, Edward Croke1 , Gerry Robinson, Chris and characterization of single element p-type SiGe/Si superlattice coolers are described. Superlattice structures were]. SiGe is a good thermoelectric material especially for high temperature applications [11

  1. Buckling suppression of SiGe islands on compliant substrates Haizhou Yina)

    E-Print Network [OSTI]

    Duffy, Thomas S.

    Buckling suppression of SiGe islands on compliant substrates Haizhou Yina) Center for Photonics structure made of SiGe and a cap layer were studied by both modeling and experiment. Both epitaxial silicon and accelerate the lateral relaxation, so that larger, flat, relaxed SiGe islands can be achieved. Using a 31 nm

  2. The revolution in SiGe: impact on device electronics D.L. Haramea,*

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    The revolution in SiGe: impact on device electronics D.L. Haramea,* , S.J. Koesterb , G. Freemanc, Hopewell Junction, NY, USA d Georgia Technical University, Atlanta, GA, USA Abstract SiGe is having a major impact in device electronics. The most mature application is the SiGe BiCMOS technology which

  3. Measurement of the neutron-capture cross section of 76Ge and 74Ge below 15 MeV and its relevance to 0??? decay searches of 76Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of 76Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of View the MathML source?86%Ge76 and View the MathML source?14%Ge74 used in the 0???0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the View the MathML sourceH3(p,n)He3, View the MathML sourceH2(d,n)He3 and View the MathML sourceH3(d,n)He4 reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for 74Ge at neutron energies below 8 MeV. Indium andmoregold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy was used to determine the ?-ray activity of the daughter nuclei of interest. For the 76Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the View the MathML sourceGe74(n,?)Ge75 reaction, the present data are about a factor of two larger than predicted. It was found that the View the MathML sourceGe74(n,?)Ge75 yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the View the MathML sourceGe76(n,?)Ge77 yield due to the larger cross section of the former reaction.less

  4. Effect of different chemical treatments of surface on the height of Al-p-SiGe and Au-n-SiGe barriers

    SciTech Connect (OSTI)

    Atabaev, I. G., E-mail: atvi@uzsci.net; Matchanov, N. A.; Hajiev, M. U., E-mail: hajiev_mardonbek@mail.ru; Pak, V.; Saliev, T. M. [Academy of Sciences of Uzbekistan, Starodubtsev Physicotechnical Institute (Uzbekistan)

    2010-05-15T23:59:59.000Z

    The effect of different chemical treatments on the properties of Au-n-SiGe and Al-p-SiGe Schottky barriers has been investigated. Etching under different conditions was used to prepare surfaces with different densities of surface states (D{sub ss}). It is shown that the barrier height in the structures under study correlates with the D{sub ss} value and germanium content in the Si{sub 1-x}Ge{sub x} alloy.

  5. Axion Detection with Germanium Detectors Hannah LeTourneau

    E-Print Network [OSTI]

    Washington at Seattle, University of - Department of Physics, Electroweak Interaction Research Group

    of germanium detectors which will be used primarily to search for neutrinoless double beta decay, which would matter, and dark energy.[2] Neutrinoless double beta decay (0) is an energet- ically possible decay method for determining the crystal axis orientation of Ge detectors. I. BACKGROUND A. Neutrinoless Double

  6. The 12 GeV Energy Upgrade at Jefferson Laboratory

    SciTech Connect (OSTI)

    Pilat, Fulvia C.

    2012-09-01T23:59:59.000Z

    Two new cryomodules and an extensive upgrade of the bending magnets at Jefferson Lab has been recently completed in preparation for the full energy upgrade in about one year. Jefferson Laboratory has undertaken a major upgrade of its flagship facility, the CW re-circulating CEBAF linac, with the goal of doubling the linac energy to 12 GeV. I will discuss here the main scope and timeline of the upgrade and report on recent accomplishments and the present status. I will then discuss in more detail the core of the upgrade, the new additional C100 cryomodules, their production, tests and recent successful performance. I will then conclude by looking at the future plans of Jefferson Laboratory, from the commissioning and operations of the 12 GeV CEBAF to the design of the MEIC electron ion collider.

  7. Evaporation-based Ge/.sup.68 Ga Separation

    DOE Patents [OSTI]

    Mirzadeh, Saed (Albuquerque, NM); Whipple, Richard E. (Los Alamos, NM); Grant, Patrick M. (Los Alamos, NM); O'Brien, Jr., Harold A. (Los Alamos, NM)

    1981-01-01T23:59:59.000Z

    Micro concentrations of .sup.68 Ga in secular equilibrium with .sup.68 Ge in strong aqueous HCl solution may readily be separated in ionic form from the .sup.68 Ge for biomedical use by evaporating the solution to dryness and then leaching the .sup.68 Ga from the container walls with dilute aqueous solutions of HCl or NaCl. The chloro-germanide produced during the evaporation may be quantitatively recovered to be used again as a source of .sup.68 Ga. If the solution is distilled to remove any oxidizing agents which may be present as impurities, the separation factor may easily exceed 10.sup.5. The separation is easily completed and the .sup.68 Ga made available in ionic form in 30 minutes or less.

  8. Partners for progress in HVDC: GE and EPRI

    SciTech Connect (OSTI)

    Damsky, B.L. (HVDC Projects Operation, Collingdale, PA); Ladden, J.M.

    1983-01-01T23:59:59.000Z

    Since the first solid-state HVDC system was installed at Eel River in 1971, there have been enormous strides in component capability and control algorithm sophistication. Benefits include reduction in cost and power losses, smaller size and improved system stability - all achieved with the same high reliability. These improvements have been achieved through development programs which required a commitment of considerable resources made possible because GE considers HVDC an important area of growth and because EPRI has consistently supported HVDC projects. Some developments from the GE-EPRI partnership for progress in HVDC technology are already being offered and others are in the process of commercialization. These on-going programs assure that future improvements will continue to make HVDC a more attractive alternative for meeting the utility industry's needs.

  9. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors

    SciTech Connect (OSTI)

    Le, Son T.; Jannaty, P.; Luo, Xu; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, Samuel T.

    2012-10-31T23:59:59.000Z

    We present silicon-compatible tri-gated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high ION ~ 2 A/m, fully suppressed ambipolarity, and a sub-threshold slope SS ~ 140 mV/decade over 4 decades of current with lowest SS ~ 50 mV/decade. Device operation in the tunneling mode is confirmed by three-dimensional TCAD simulation. Interestingly, in addition to the TFET mode, our devices work as standard nanowire FETs with good ION/IOFF ratio when the source-drain junction is forward-biased. The improved transport in both biasing modes confirms the benefits of utilizing bandgap engineered axial nanowires for enhancing device performance.

  10. Calculation of thermal parameters of SiGe microbolometers

    E-Print Network [OSTI]

    Voitsekhovskii, A V; Yuryev, V A; Nesmelov, S N; 10.1007/s11182-008-9015-4

    2012-01-01T23:59:59.000Z

    The thermal parameters of a SiGe microbolometer were calculated using numerical modeling. The calculated thermal conduction and thermal response time are in good agreement with the values found experimentally and range between 2x10$^-7$ and 7x10$^-8$ W/K and 1.5 and 4.5 ms, respectively. High sensitivity of microbolometer is achieved due to optimization of the thermal response time and thermal conduction by fitting the geometry of supporting heat-removing legs or by selection of a suitable material providing boundary thermal resistance higher than 8x10$^-3$ cm$^2$K/W at the SiGe interface.

  11. Proton-proton Scattering Above 3 GeV/c

    SciTech Connect (OSTI)

    A. Sibirtsev, J. Haidenbauer, H.-W. Hammer S. Krewald ,Ulf-G. Meissner

    2010-01-01T23:59:59.000Z

    A large set of data on proton-proton differential cross sections, analyzing powers and the double-polarization parameter A{sub NN} is analyzed employing the Regge formalism. We find that the data available at proton beam momenta from 3 GeV/c to 50 GeV/c exhibit features that are very well in line with the general characteristics of Regge phenomenology and can be described with a model that includes the {rho}, {omega}, f{sub 2}, and a{sub 2} trajectories and single-Pomeron exchange. Additional data, specifically for spin-dependent observables at forward angles, would be very helpful for testing and refining our Regge model.

  12. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30T23:59:59.000Z

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  13. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect (OSTI)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01T23:59:59.000Z

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

  14. GeV emission from Gamma-Ray Burst afterglows

    E-Print Network [OSTI]

    A. Panaitescu

    2008-01-10T23:59:59.000Z

    We calculate the GeV afterglow emission expected from a few mechanisms related to GRBs and their afterglows. Given the brightness of the early X-ray afterglow emission measured by Swift/XRT, GLAST/LAT should detect the self-Compton emission from the forward-shock driven by the GRB ejecta into the circumburst medium. Novel features discovered by Swift in X-ray afterglows (plateaus and chromatic light-curve breaks) indicate the existence of a pair-enriched, relativistic outflow located behind the forward shock. Bulk and inverse-Compton upscattering of the prompt GRB emission by such outflows provide another source of GeV afterglow emission detectable by LAT. The large-angle burst emission and synchrotron forward-shock emission are, most likely, too dim at high photon energy to be observed by LAT. The spectral slope of the high-energy afterglow emission and its decay rate (if it can be measured) allow the identification of the mechanism producing the GeV transient emission following GRBs.

  15. Gamma-Ray Bursts Above 1 GeV

    E-Print Network [OSTI]

    Matthew G. Baring

    1997-11-21T23:59:59.000Z

    One of the principal results obtained by the Compton Gamma Ray Observatory relating to the study of gamma-ray bursts was the detection by the EGRET instrument of energetic ($>$100 MeV) photons from a handful of bright bursts. The most extreme of these was the single 18 GeV photon from the GRB940217 source. Given EGRET's sensitivity and limited field of view, the detection rate implies that such high energy emission may be ubiquitous in bursts. Hence expectations that bursts emit out to at least TeV energies are quite realistic, and the associated target-of-opportunity activity of the TeV gamma-ray community is well-founded. This review summarizes the observations and a handful of theoretical models for generating GeV--TeV emission in bursts sources, outlining possible ways that future positive detections could discriminate between different scenarios. The power of observations in the GeV--TeV range to distinguish between spectral structure intrinsic to bursts and that due to the intervening medium between source and observer is also discussed.

  16. Exclusive processes at JLab at 6 GeV

    SciTech Connect (OSTI)

    Kim, Andrey [University of Connecticut, JLAB

    2015-01-01T23:59:59.000Z

    Deeply virtual exclusive reactions provide a unique opportunity to probe the complex internal structure of the nucleon. They allow to access information about the correlations between parton transverse spatial and longitudinal momentum distributions from experimental observables. Dedicated experiments to study Deeply Virtual Compton Scattering (DVCS) and Deeply Virtual Meson Production (DVMP) have been carried out at Jefferson Lab using continuous electron beam with energies up to 6 GeV. Unpolarized cross sections, beam, target and double spin asymmetries have been measured for DVCS as well as for ?0 exclusive electroproduction. The data from Hall B provide a wide kinematic coverage with Q2=1-4.5 GeV2, xB=0.1-0.5, and ?t up to 2 GeV2. Hall A data have limited kinematic range partially overlapping with Hall B kinematics but provide a high accuracy measurements. Scaling tests of the DVCS cross sections provide solid evidence of twist-2 dominance, which makes chiral-even GPDs accessible even at modest Q2. We will discuss the interpretation of these data in terms of Generalized Parton Distributions (GPDs) model. Successful description of the recent CLAS ?0 exclusive production data within the framework of the GPD-based model provides a unique opportunity to access the chiral-odd GPDs.

  17. Le droit constitutionnel de la famille Eric Millard

    E-Print Network [OSTI]

    Boyer, Edmond

    législatives (principalement regroupées dans le Code civil) est désormais devenu objet de normes pas sous cet angle que j'aborderai la question, et cela pour deux raisons. D'abord parce qu'en matière liberté individuelle, et l'on conviendra que c'est peu. Surtout, parce que ce débat doit être abordé

  18. Le son musical 2007 I Phonie et sonie

    E-Print Network [OSTI]

    Mazliak, Laurent

    Le son musical 2007 I Phonie et sonie 1 Formulaire Célérité du son c dans un gaz de masse molaire vaut 40 phones. En pratique, pour estimer la sonie d'un son complexe, on somme les intensités par. Quelles sont leurs sonies respectives lors- qu'elles sont jouées séparément ? Et ensemble ? Même question

  19. CORROSION INTERGRANULAIRE SUR LE MCANISME DE LA CORROSION INTERGRANULAIRE

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    CORROSION INTERGRANULAIRE SUR LE M?CANISME DE LA CORROSION INTERGRANULAIRE DES MAT?RIAUX'article est consacré à l'étude des phénomènes de corrosion intergranulaire présentés par les métaux et corrosion intergranulaire correspond à une dissolution préférentielle des zones d'émergence des joints de

  20. De Gaulle en Iran (octobre 1963): Le voyage oubli.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    De Gaulle en Iran (octobre 1963): Le voyage oublié. Dernière version avant publication dans la nouveau "normales" entre les démocraties occidentales et l'Iran. L'accession au pouvoir du modéré Khatami'esquisser en Iran. Une longue parenthèse serait ainsi appelée à se résorber, permettant de relancer

  1. Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor

    E-Print Network [OSTI]

    Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility By growing heterostructures that combine a surface strained Si layer with a buried strained Ge layer on Si0.5Ge0.5 , we have fabricated metal-oxide-semiconductor field-effect transistors with mobility

  2. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  3. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28T23:59:59.000Z

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.30.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  4. Large-angle production of charged pions by 3 GeV/c - 12.9 GeV/c protons on beryllium, aluminium and lead targets

    E-Print Network [OSTI]

    HARP Collaboration

    2007-09-21T23:59:59.000Z

    Measurements of the double-differential $\\pi^{\\pm}$ production cross-section in the range of momentum $100 \\MeVc \\leq p beryllium, proton--aluminium and proton--lead collisions are presented. The data were taken with the HARP detector in the T9 beam line of the CERN PS. The pions were produced by proton beams in a momentum range from 3 \\GeVc to 12.9 \\GeVc hitting a target with a thickness of 5% of a nuclear interaction length. The tracking and identification of the produced particles was performed using a small-radius cylindrical time projection chamber (TPC) placed inside a solenoidal magnet. Incident particles were identified by an elaborate system of beam detectors. Results are obtained for the double-differential cross-sections at six incident proton beam momenta (3 \\GeVc, 5 \\GeVc, 8 \\GeVc, 8.9 \\GeVc (Be only), 12 \\GeVc and 12.9 \\GeVc (Al only)) and compared to previously available data.

  5. Monte Carlo calculations of the anisotropic engineering moduli for crystalline RDX (0 GPa {le} p {le} 4 GPa)

    SciTech Connect (OSTI)

    Bennett, C.M. [Los Alamos National Lab., NM (United States). Theoretical Div.]|[Oklahoma State Univ., Stillwater, OK (United States). Dept. of Chemistry; Sewell, T.D. [Los Alamos National Lab., NM (United States). Theoretical Div.

    1998-12-31T23:59:59.000Z

    Isothermal-iosbaric Monte Carlo calculations are used in conjunction with an expression that relates the elastic stiffness tensor to the mean-square fluctuations of the strain tensor to obtain first principles predictions of the Young`s moduli, shear moduli, and Poisson`s ratios for room-temperature crystalline RDX. The results are based on numerical data obtained during previously reported calculations of the hydrostatic compression of RDX over the pressure domain 0 GPa {le} p {le} 4 GPa. Although there are no experimental data available for comparison, the predicted values of the engineering coefficients are in accord with general expectations for brittle molecular crystals. The calculations reported here are preliminary: more extensive Monte Carlo realizations are needed to yield well-converged predictions; these are underway for RDX and {beta}-HMX.

  6. GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Sept 2012, JC Program Extension General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  7. Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeOx) Films

    SciTech Connect (OSTI)

    Murphy, Neil R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, Chintalapalle V.

    2014-03-18T23:59:59.000Z

    Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, ? = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing ? from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of ? is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (?) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (? = 550 nm) to 2.62 and occurs at ? = 0.25. Finally n drops to 1.60 for ? = 0.501.00, where the films become GeO2. A detailed correlation between ?, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

  8. Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition J. Akola1,2

    E-Print Network [OSTI]

    Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition J. Akola1,2 and R. O. Jones1 and amorphous structures of Ge0:15Te0:85 and GeTe alloys are characterized using combined density functional,'' and Ge atoms (fourfold coordinated) show octahedral and tetrahedral bonding angles. Cubic local

  9. GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 6, May 2012, JC Program Extension General English) General English (GE) Academic English (AE) Which term will this extension begin? Fall Winter Spring Summer more sessions of GE do you wish to request? 1 2 3 4 5 6 Other ____ (GE sessions are 4 weeks) *Please

  10. GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Request Form, Version 12, July 2013, ML Program Change-General English English student, and I would like to switch to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours

  11. Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells

    E-Print Network [OSTI]

    Deng, Xunming

    Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical in an a-Si based multiple- junction solar cell. 1. INTRODUCTION Narrow bandgap amorphous SiGe (a

  12. 258 IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO. 5, MAY 2002 Self-Aligned SiGe NPN Transistors With

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    258 IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO. 5, MAY 2002 Self-Aligned SiGe NPN Transistors, Member, IEEE Abstract--This paper reports on SiGe NPN HBTs with unity gain cutoff frequency ( )of 207 GHz (HBTs), high- speed devices, germanium, silicon, SiGe. I. INTRODUCTION THE BiCMOS silicon-germanium (SiGe

  13. OFFRE D'EMPLOI Le Conservatoire botanique national du Massif central est un tablissement public, agr par le Ministre

    E-Print Network [OSTI]

    -Loire, du Parc naturel régional Livradois-Forez, du Syndicat mixte d'aménagement territorial du Haut botanique national définies par l'article L414-10 du code de l'environnement comme suit : Contribuer, dans code de l'environnement dans la mesure compatible avec le respect des habitats et des espèces et

  14. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing

    SciTech Connect (OSTI)

    Miyao, Masanobu; Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh; Enokida, Toyotsugu; Hagino, Hiroyasu; Ninomiya, Masaharu; Nakamae, Masahiko [Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192 (Japan); SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015 (Japan); SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597 (Japan)

    2006-04-03T23:59:59.000Z

    Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H{sup +} irradiation with a medium dose (5x10{sup 15} cm{sup -2}) and postannealing (1200 deg. C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm)

  15. Characterization of second-phase plates in a Gd5Ge3 intermetallic compound

    SciTech Connect (OSTI)

    Cao, Qing [Ames Laboratory; Chumbley, Leonard S. [Ames Laboratory

    2013-05-16T23:59:59.000Z

    Rare-earth compounds based on the stoichiometry R5(SixGe1?x)4 (R = rare-earth elements) exhibit many unusual features, including possessing R5(SixGe1?x)3 thin plates which always precipitate from the matrix despite efforts to suppress their formation. In an effort to better understand the unique relationship between these two intermetallic alloy systems, the bulk microstructure of the compound Gd5Ge3 was examined using scanning (SEM) and transmission electron microscopy (TEM) and optical microscopy. Surprisingly, SEM examination revealed a series of thin plates present in the Gd5Ge3 matrix similar to what is seen in Gd5Ge4. TEM observation revealed that a role reversal had occurred, with the thin plates possessing the orthorhombic structure and composition of Gd5Ge4. The orientation relationship between Gd5Ge4 thin plates and the Gd5Ge3 matrix was determined to be Graphic the same relationship reported for Gd5Ge3 plates precipitating from a Gd5Ge4 matrix. However, by exchanging the respective roles of the phases as regards matrix vs. precipitate, the total number of precipitation variants seen can be increased from two to six. The persistence with which these two intermetallic systems co-exist is truly unique. However, understanding exactly the kinetic and thermodynamic conditions that lead to their unique relationship is hampered by the high formation temperatures at which the observed reaction occurs.

  16. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    SciTech Connect (OSTI)

    Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31T23:59:59.000Z

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  17. Experimental evidence of improved thermoelectric properties at 300K in Si/Ge superlattice structures

    SciTech Connect (OSTI)

    Venkatasubramanian, R.; Colpitts, T.; Watko, E.; Malta, D. [Research Triangle Inst., Research Triangle Park, NC (United States)

    1997-04-01T23:59:59.000Z

    The authors have found that it may be possible to obtain significant enhancement in ZT at 300 K, over conventional bulk SiGe alloys, through the use of Si/Ge Superlattice (SL) structures. The Seebeck coefficient in Si/Ge SL structures was observed to increase rapidly with decreasing SL period with no loss of electrical conductivity. The carrier mobilities in Si/Ge SLs were higher than in a comparable thin-film Si/Ge alloy. The best power factor of the short-period Si/Ge SLs is 112.2 {micro}W/K{sup 2} cm, over five-fold better than state-of-the-art n-type, bulk SiGe alloys. Approximately a two to four-fold reduction in thermal conductivity in short-period SL structures, compared to bulk SiGe alloy, was observed. The authors estimate at least a factor of five improvement over current state-of-the-art SiGe alloys, in several Si/Ge SL samples with periodicity of {approximately}45 to 75 {angstrom}. The results of this study are promising, but tentative due to the possible effects of substrate and the developmental nature of the thermoelectric property measurements.

  18. Synthesis, crystal structure and properties of [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} with mixed-valent Ge centers

    SciTech Connect (OSTI)

    Yue, Cheng-Yang; Yuan, Zhuang-Dong; Zhang, Lu-Ge; Wang, Ya-Bai; Liu, Guo-Dong; Gong, Liao-Kuo [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); Lei, Xiao-Wu, E-mail: xwlei_jnu@163.com [Key Laboratory of Inorganic Chemistry in Universities of Shandong, Department of Chemistry and Chemical Engineering, Jining University, Qufu, Shandong 273155 (China); State Key Laboratory of Crystal Materials, Institute of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

    2013-10-15T23:59:59.000Z

    One new manganese thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} (dien=diethylenetriamine), was prepared under mild solvothermal conditions and structurally and spectroscopically characterized. The title compound crystallizes in the orthorhombic system, chiral space group P2{sub 1}2{sub 1}2{sub 1} (no. 19) with a=9.113(4) , b=12.475(5) , c=17.077(7) , V=1941.5(15) {sup 3} and Z=4. Its structure features a three-dimensional (3D) network composed of a one-dimensional (1D) [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain and a [(dien){sub 2}Mn]{sup 2+} complex interconnected via various hydrogen bonds. The most interesting structural feature of the compound is the presence of two different oxidation states of germanium centers in the 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain, which is also supported by the result of X-ray photoelectron spectroscopy measurement. The optical property of the title compound has also been studied by UVvis spectra. - Graphical abstract: One new thiogermanate, [(dien){sub 2}Mn]Ge{sub 2}S{sub 4}, contains a one-dimensional [Ge{sub 2}S{sub 4}]{sup 2?} anionic chain with two different oxidation states of germanium centers. Display Omitted - Highlights: One new manganese thiogermanate [(dien){sub 2}Mn]Ge{sub 2}S{sub 4} was prepared. The compound features 1D [Ge{sub 2}S{sub 4}]{sup 2?} chain composed of [Ge{sup II}S{sub 4}] and [Ge{sup IV}S{sub 4}] tetrahedra. The first example of inorganicorganic hybrid thiogermanates with mixed valent Ge centers.

  19. Formation of nickel germanide on SiO{sub 2}-capped n-Ge to lower its Schottky barrier height

    SciTech Connect (OSTI)

    Lin, Guangyang; Tang, Mengrao; Li, Cheng, E-mail: lich@xmu.edu.cn; Huang, Shihao; Lu, Weifang; Wang, Chen; Yan, Guangming; Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)] [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen, Fujian 361005 (China)

    2013-12-16T23:59:59.000Z

    In this Letter, NiGe/SiO{sub 2}/n-Ge ohmic contacts were demonstrated with Ge, rather than Ni, diffusion through the ion-implanted SiO{sub 2} films to form NiGe. The equivalent Schottky barrier height reduced from 0.58?eV for NiGe/n-Ge to ohmic contact. The anomalous diffusion behavior and accumulation of Ge in the SiO{sub 2} near the NiGe/SiO{sub 2} interface can be explained by vacancy-enhanced Ge diffusion. It is proposed that the presence of vacancies and Ge atoms embedded in the SiO{sub 2} layer play a significant role in the current enhancement by generation of multiple levels in the SiO{sub 2} band gap.

  20. GE & AE Program Change Form, Version 9, May 2012, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Program Change Form, Version 9, May 2012, JC Program Change General English or Academic to GE. How many more sessions of GE do you wish to request? 1 2 3 4 5 6 How many GE hours do you wish to take? 21 hours 27 hours 2) ____ I am a GE student, and I would like to switch to AE. How many more