National Library of Energy BETA

Sample records for ge appliances order

  1. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  2. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  3. Midea Washing Appliance: Order (2011-CE-1903)

    Broader source: Energy.gov [DOE]

    DOE ordered Midea Washing Appliance Mfg. Co., Ltd. to pay a $6,000 civil penalty after finding Midea Washing Appliance had failed to certify that certain models of dishwashers comply with the applicable energy conservation standards.

  4. GE Appliances: Proposed Penalty (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards.

  5. ASKO Appliances: Order (2012-CE-19/2004)

    Broader source: Energy.gov [DOE]

    DOE ordered ASKO Appliances, Inc. to pay a $36,500 civil penalty after finding ASKO had failed to certify that certain models of residential dishwashers and clothes washers comply with the applicable energy and water conservation standards.

  6. Modeling of GE Appliances: Cost Benefit Study of Smart Appliances in Wholesale Energy, Frequency Regulation, and Spinning Reserve Markets

    SciTech Connect (OSTI)

    Fuller, Jason C.; Parker, Graham B.

    2012-12-31

    This report is the second in a series of three reports describing the potential of GE’s DR-enabled appliances to provide benefits to the utility grid. The first report described the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The third report will explore the technical capability of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation. In this report, a series of analytical methods were presented to estimate the potential cost benefit of smart appliances while utilizing demand response. Previous work estimated the potential technical benefit (i.e., peak reduction) of smart appliances, while this report focuses on the monetary value of that participation. The effects on wholesale energy cost and possible additional revenue available by participating in frequency regulation and spinning reserve markets were explored.

  7. Modeling of GE Appliances in GridLAB-D: Peak Demand Reduction

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat GNVSR; Prakash Kumar, Nirupama; Leistritz, Sean M.; Parker, Graham B.

    2012-04-29

    The widespread adoption of demand response enabled appliances and thermostats can result in significant reduction to peak electrical demand and provide potential grid stabilization benefits. GE has developed a line of appliances that will have the capability of offering several levels of demand reduction actions based on information from the utility grid, often in the form of price. However due to a number of factors, including the number of demand response enabled appliances available at any given time, the reduction of diversity factor due to the synchronizing control signal, and the percentage of consumers who may override the utility signal, it can be difficult to predict the aggregate response of a large number of residences. The effects of these behaviors can be modeled and simulated in open-source software, GridLAB-D, including evaluation of appliance controls, improvement to current algorithms, and development of aggregate control methodologies. This report is the first in a series of three reports describing the potential of GE's demand response enabled appliances to provide benefits to the utility grid. The first report will describe the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The second and third reports will explore the potential of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation and the effects on volt-var control schemes.

  8. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive Compensation References: FAR

  9. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  10. GE Appliance Park Louisville, KY Plant Wide Assessment Final Report October 25th, 2007

    SciTech Connect (OSTI)

    Chandon Rao; Richard Urschel

    2007-10-25

    Used a team of experts to analyze and model major systems at a large industrial appliance manufacturer. During the data gathering stage, the team specifically looked for baselining the efficiency of the systems as well as developing short term and longer term efficiency projects. Electrical distribution, Compressed air generation and thermal heat recovery for the production facility and front office heating and cooling optimization were all baselined during the study.

  11. Detailed Modeling and Response of Demand Response Enabled Appliances

    SciTech Connect (OSTI)

    Vyakaranam, Bharat; Fuller, Jason C.

    2014-04-14

    Proper modeling of end use loads is very important in order to predict their behavior, and how they interact with the power system, including voltage and temperature dependencies, power system and load control functions, and the complex interactions that occur between devices in such an interconnected system. This paper develops multi-state time variant residential appliance models with demand response enabled capabilities in the GridLAB-DTM simulation environment. These models represent not only the baseline instantaneous power demand and energy consumption, but the control systems developed by GE Appliances to enable response to demand response signals and the change in behavior of the appliance in response to the signal. These DR enabled appliances are simulated to estimate their capability to reduce peak demand and energy consumption.

  12. APPLIANCE STANDARDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    APPLIANCE STANDARDS How they interact with energy efficiency programs Alas, those mercurial baselines. Since 2005, 45 mandatory Department of Energy (DOE) efficiency standards have...

  13. ASKO Appliances: Order (2012-CE-19/2004) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t y A s sconveyance of9, 2013 ASER Web AddressesDOE ordered

  14. Higher-Order Spin Resonances in 2.1 GeV/c Polarized Proton Beam

    SciTech Connect (OSTI)

    Leonova, M A; Gordon, K N; Krisch, A D; Liu, J; Nees, D A; Raymond, R S; Sivers, D W; Wong, V K; Hinterberger, F

    2011-03-01

    Spin resonances can cause partial or full depolarization or spin-flip of a polarized beam. We studied 1st-, 2nd- and 3rd-order spin resonances with a 2.1 GeV/c vertically polarized proton beam stored in the COSY Cooler Synchrotron. We observed almost full spin-flip when crossing the 1st-order G*gamma=8?nuy vertical-betatron-tune spin resonance and partial depolarization near some 2nd- and 3rd-order resonances. We observed almost full depolarization near the 1st-order G*gamma=8?nux horizontal spin resonance and partial depolarization near some 2nd- and 3rd-order resonances. Moreover, we found that a 2nd-order nux resonance seems about as strong as some 3rd-order nux resonances, while some 3rd-order nuy resonances seem much stronger than a 2nd-order nuy resonance. It was thought that, for flat accelerators, vertical spin resonances are stronger than horizontal, and lower order resonances are stronger than higher order ones. The data suggest that many higher-order spin resonances, both horizontal and vertical, must be overcome to accelerate polarized protons to high energies; the data may help RHIC to better overcome its snake resonances between 100 and 250 GeV/c.

  15. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    SciTech Connect (OSTI)

    Polking, Mark J.; Zheng, Haimei; Urban, Jeffrey J.; Milliron, Delia J.; Chan, Emory; Caldwell, Marissa A.; Raoux, Simone; Kisielowski, Christian F.; Ager III, Joel W.; Ramesh, Ramamoorthy; Alivisatos, A.P.

    2009-12-07

    Ferroelectrics and other materials that exhibit spontaneous polar ordering have demonstrated immense promise for applications ranging from non-volatile memories to microelectromechanical systems. However, experimental evidence of polar ordering and effective synthetic strategies for accessing these materials are lacking for low-dimensional nanomaterials. Here, we demonstrate the synthesis of size-controlled nanocrystals of the polar material germanium telluride (GeTe) using colloidal chemistry and provide the first direct evidence of room-temperature polar ordering in nanocrystals less than 5 nm in size using aberration-corrected transmission electron microscopy. Synchrotron x-ray diffraction and Raman studies demonstrate a sizeable polar distortion and a reversible size-dependent polar phase transition in these nanocrystals. The stability of polar ordering in solution-processible nanomaterials suggests an economical avenue to Tbit/in2-density non-volatile memory devices and other applications.

  16. Appliance Efficiency Regulations

    Broader source: Energy.gov [DOE]

    Note: The federal government has imposed and updated appliance efficiency standards through several legislative acts,* and now has standards in place or under development for 30 classes of...

  17. Guide to Kitchen Appliances

    SciTech Connect (OSTI)

    2010-10-01

    This fact sheet tells you how to buy and maintain energy-efficient kitchen appliances, including refrigerators, freezers, and dishwashers, to save energy and money.

  18. Appliance Energy Calculator

    Broader source: Energy.gov [DOE]

    Our appliance and electronic energy use calculator allows you to estimate your annual energy use and cost to operate specific products. The wattage values provided are samples only; actual wattage...

  19. Second order phase transition temperature of single crystals of Gd5Si1.3Ge2.7 and Gd5Si1.4Ge2.6

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hadimani, R. L.; Melikhov, Y.; Schlagel, D. L.; Lograsso, T. A.; Dennis, K. W.; McCallum, R. W.; Jiles, D. C.

    2015-01-30

    Gd5(SixGe1–x)4 has mixed phases in the composition range 0.32 5Si1.3Ge2.7 and Gd5Si1.4Ge2.6. In this study, we have investigated the first order and second order phase transition temperatures of these samples using magnetic moment vs. temperature and magnetic moment vs. magnetic field at different temperatures. We have used a modified Arrott plot technique that was developed and reported by us previously to determine the “hidden” second order phase transition temperature of the orthorhombic II phase.

  20. Ca{sub 2}Pd{sub 3}Ge, a new fully ordered ternary Laves phase structure

    SciTech Connect (OSTI)

    Doverbratt, Isa; Ponou, Simeon; Lidin, Sven

    2013-01-15

    The title compound, Ca{sub 2}Pd{sub 3}Ge, was prepared as a part of a systematic investigation of the Ca-Pd-Ge ternary phase diagram. The structure was determined and refined from single-crystal X-ray diffraction data. It is a new fully ordered ternary Laves phase with the space group R-3m, Z=3, a=5.6191 (5) A, c=12.1674 (7) A, wR{sub 2}=0.054 (all data) and is isostructural to Mg{sub 2}Ni{sub 3}Si (Noreus et al., 1985 [17]) but due to the larger size of all elements in Ca{sub 2}Pd{sub 3}Ge, the cell axes are approximately 10% longer. The compound may formally be considered as a Zintl compound, with [Pd{sub 3}Ge]{sup 4-} forming a poly-anionic network and divalent Ca cations located in truncated tetrahedral interstices. The electronic structure and chemical bonding of Ca{sub 2}Pd{sub 3}Ge is discussed in terms of LMTO band structure calculations and compared with CaPd{sub 2} (MgCu{sub 2}-type). - Graphical abstract: The title compound, Ca{sub 2}Pd{sub 3}Ge is a new fully ordered ternary Laves phase which may formally be considered as a Zintl compound, with [Pd{sub 3}Ge]{sup 4-} forming a poly-anionic network and divalent Ca cations located in truncated tetrahedral interstices. The structure is composed of Kagome net layers, consisting of Pd atoms only, which are stacked in an ABC sequence. Band structure calculations show that the Fermi level is located at a local minimum of the DOS (pseudo-gap) indicating that the charge is roughly optimized in the structure. Highlights: Black-Right-Pointing-Pointer Site specific segregation in a Laves phase that is also a Zintl phase. Black-Right-Pointing-Pointer Pseudo-gap at the Fermi level in a Laves phase. Black-Right-Pointing-Pointer Distorted Frank-Kasper polyhedron.

  1. Appliances, Lighting, Electronics, and Miscellaneous Equipment Electricity Use in New Homes

    E-Print Network [OSTI]

    Brown, Richard E.; Rittelman, William; Parker, Danny; Homan, Gregory

    2007-01-01

    62440 Appliances, Lighting, Electronics, and Miscellaneousof California. Appliances, Lighting, Electronics, anduses (appliances, lighting, electronics, and miscellaneous

  2. Tips: Smart Appliances | Department of Energy

    Office of Environmental Management (EM)

    manufacturers are now offering "smart" appliances -- appliances that can be connected to smart electric meters or home energy management systems to help you shift your electricity...

  3. Tips: Smart Appliances | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Some manufacturers are now offering "smart" appliances -- appliances that can be connected to smart electric meters or home energy management systems to help you shift your...

  4. Research & Development Roadmap: Next-Generation Appliances |...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Research & Development Roadmap: Next-Generation Appliances Research & Development Roadmap: Next-Generation Appliances The Research and Development (R&D) Roadmap for Next-Generation...

  5. Remote repair appliance

    DOE Patents [OSTI]

    Heumann, Frederick K. (Ballston Spa, NY); Wilkinson, Jay C. (Ballston Spa, NY); Wooding, David R. (Saratoga Springs, NY)

    1997-01-01

    A remote appliance for supporting a tool for performing work at a worksite on a substantially circular bore of a workpiece and for providing video signals of the worksite to a remote monitor comprising: a baseplate having an inner face and an outer face; a plurality of rollers, wherein each roller is rotatably and adjustably attached to the inner face of the baseplate and positioned to roll against the bore of the workpiece when the baseplate is positioned against the mouth of the bore such that the appliance may be rotated about the bore in a plane substantially parallel to the baseplate; a tool holding means for supporting the tool, the tool holding means being adjustably attached to the outer face of the baseplate such that the working end of the tool is positioned on the inner face side of the baseplate; a camera for providing video signals of the worksite to the remote monitor; and a camera holding means for supporting the camera on the inner face side of the baseplate, the camera holding means being adjustably attached to the outer face of the baseplate. In a preferred embodiment, roller guards are provided to protect the rollers from debris and a bore guard is provided to protect the bore from wear by the rollers and damage from debris.

  6. Energy Star Appliances 1 Texas A&M AgriLife Extension Service ENERGY STAR Appliances

    E-Print Network [OSTI]

    Energy Star® Appliances 1 Texas A&M AgriLife Extension Service ENERGY STAR® Appliances ENERGY STAR®-labeled appliances save you money by using less electricity and water than other appliances. Better appliance energy efficiency comes from quality materials and technologically advanced materials. Although energy efficient

  7. Incorporating Experience Curves in Appliance Standards Analysis

    E-Print Network [OSTI]

    Desroches, Louis-Benoit

    2012-01-01

    appliance price projections than the assumption-basedrepresentative projection of future prices than the constant

  8. High-temperature order-disorder transitions in the skutterudites CoGe{sub 1.5}Q{sub 1.5} (Q=S, Te)

    SciTech Connect (OSTI)

    Kaltzoglou, Andreas; Powell, Anthony V.; Knight, Kevin S.; Vaqueiro, Paz

    2013-02-15

    The temperature dependence of anion ordering in the skutterudites CoGe{sub 1.5}Q{sub 1.5} (Q=S, Te) has been investigated by powder neutron diffraction. Both materials adopt a rhombohedral structure at room temperature (space group R3{sup Macron} ) in which the anions are ordered trans to each other within Ge{sub 2}Q{sub 2} rings. In CoGe{sub 1.5}S{sub 1.5}, anion ordering is preserved up to the melting point of 950 Degree-Sign C. However, rhombohedral CoGe{sub 1.5}Te{sub 1.5} undergoes a phase transition at 610 Degree-Sign C involving a change to cubic symmetry (space group Im3{sup Macron }). In the high-temperature modification, there is a statistical distribution of anions over the available sites within the Ge{sub 2}Te{sub 2} rings. The structural transition involves a reduction in the degree of distortion of the Ge{sub 2}Te{sub 2} rings which progressively transform from a rhombus to a rectangular shape. The effect of this transition on the thermoelectric properties has been investigated. - Graphical abstract: Powder neutron diffraction reveals that the skutterudite CoGe{sub 1.5}Te{sub 1.5} undergoes a phase transition at 610 Degree-Sign C, involving the disordering of the anions within the Ge{sub 2}Te{sub 2} rings. Highlights: Black-Right-Pointing-Pointer CoGe{sub 1.5}S{sub 1.5} retains an ordered skutterudite structure up to 950 Degree-Sign C. Black-Right-Pointing-Pointer CoGe{sub 1.5}Te{sub 1.5} undergoes an order-disorder phase transition at 610 Degree-Sign C. Black-Right-Pointing-Pointer Below 610 Degree-Sign C, anions are arranged trans to each other within Ge{sub 2}Te{sub 2} rings. Black-Right-Pointing-Pointer Above 610 Degree-Sign C, anions are statistically distributed within the Ge{sub 2}Te{sub 2} rings. Black-Right-Pointing-Pointer The effect of the phase transition on the thermal conductivity is discussed.

  9. Measurements of Higher Order Flow Harmonics in Au + Au Collisions at s_NN = 200 GeV

    SciTech Connect (OSTI)

    Adare, A. [University of Colorado, Boulder; Awes, Terry C [ORNL; Cianciolo, Vince [ORNL; Efremenko, Yuri V [ORNL; Enokizono, Akitomo [Oak Ridge National Laboratory (ORNL); Read Jr, Kenneth F [ORNL; Silvermyr, David O [ORNL; Sorensen, Soren P [University of Tennessee, Knoxville (UTK); Stankus, Paul W [ORNL

    2011-01-01

    Flow coefficients v{sub n} for n = 2, 3, 4, characterizing the anisotropic collective flow in Au+Au collisions at {radical}s{sub NN} = 200 GeV, are measured relative to event planes {Psi}{sub n}, determined at large rapidity. We report v{sub n} as a function of transverse momentum and collision centrality, and study the correlations among the event planes of different order n. The v{sub n} are well described by hydrodynamic models which employ a Glauber Monte Carlo initial state geometry with fluctuations, providing additional constraining power on the interplay between initial conditions and the effects of viscosity as the system evolves. This new constraint can serve to improve the precision of the extracted shear viscosity to entropy density ratio {eta}/s.

  10. Appliances & Electronics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    href"node587248">Check out these tips -- which include using a power strip and switching to ENERGY STAR appliances -- that every homeowner should try. Looking for ways to...

  11. Tips: Shopping for Appliances | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Appliances July 16, 2014 - 7:33pm Addthis What's the real cost? Every appliance has two price tags -- the purchase price and the operating cost. Consider both when buying a new...

  12. Appliance Standards and Rulemaking Federal Advisory Committee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Issuance Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC) - Central Air Conditioner Regional Standards Enforcement Working Group; Notice of Open...

  13. Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition J. Akola1,2

    E-Print Network [OSTI]

    important roles in modern computers (DVD-RAM) and electronic devices (rewritable optical disks DVD-RW hybridization) in `-Ge0:15Te0:85 [15]. Recently we reported DF calculations of the Ge2Sb2Te5 (GST) alloy

  14. Appliances, Lighting, Electronics, and Miscellaneous Equipment Electricity Use in New Homes

    E-Print Network [OSTI]

    Brown, Richard E.; Rittelman, William; Parker, Danny; Homan, Gregory

    2007-01-01

    62440 Appliances, Lighting, Electronics, and MiscellaneousAppliances, Lighting, Electronics, and Miscellaneoususes (appliances, lighting, electronics, and miscellaneous

  15. Appliance remanufacturing and life cycle energy and economic savings

    E-Print Network [OSTI]

    Boustani, Avid

    In this paper we evaluate the energy and economic consequences of appliance remanufacturing relative to purchasing new. The appliances presented in this report constitute major residential appliances: refrigerator, dishwasher, ...

  16. Earthjustice, Appliance Standards Awareness Project, Natural...

    Energy Savers [EERE]

    Council - Comments in response to DOE solicitation of views on the implementation of test procedure waivers for large capacity clothes washers Earthjustice, Appliance Standards...

  17. Appliance Rebates: Frequently Asked Questions | Department of...

    Energy Savers [EERE]

    Spikes Former Communicator at DOE's National Renewable Energy Laboratory The appliance rebate program has been wildly successful in many states. So successful, in fact, that people...

  18. Smart Domestic Appliances Provide Flexibility for Sustainable...

    Open Energy Info (EERE)

    benefits and difficulties associated with smart grid appliances. The presenter discusses demand response and load management and how users of smart grid can benefit renewable...

  19. Appliances and Electronics | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electricity. | Photo courtesy of Dennis SchroederNREL. Incentives and Financing for Energy Efficient Homes This chart shows how much energy a typical appliance uses per year...

  20. Retrospective Evaluation of Appliance Price Trends

    E-Print Network [OSTI]

    Dale, Larry

    2010-01-01

    the higher the product cost and retail price. Table 3.change and appliance price Room air conditioners Small (price data to clarify price

  1. ASKO Appliances: Compliance Determination (2010-SE-0601)

    Broader source: Energy.gov [DOE]

    DOE tested four units dishwasher manufactured by ASKO Appliances, Inc. Applying statistical analysis, DOE found that the dishwasher meets the federal energy standards for maximum energy use.

  2. Energy Efficient Appliance Sales Soar in North Carolina

    Broader source: Energy.gov [DOE]

    It took just eight days for retailers to rack up $64 million in sales of appliances through the state's Appliance Rebate Program.

  3. HVAC, Water Heating, and Appliances Overview - 2015 BTO Peer...

    Office of Environmental Management (EM)

    Heating, and Appliances Overview - 2015 BTO Peer Review HVAC, Water Heating, and Appliances Overview - 2015 BTO Peer Review Presenter: Tony Bouza, U.S. Department of Energy View...

  4. State Energy-Efficient Appliance Rebate Program: Volume 1 - Program...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State Energy-Efficient Appliance Rebate Program: Volume 1 - Program Design Lessons Learned State Energy-Efficient Appliance Rebate Program: Volume 1 - Program Design Lessons...

  5. State Energy Efficient Appliance Rebate Program (SEEARP) reports...

    Open Energy Info (EERE)

    State Energy Efficient Appliance Rebate Program (SEEARP) reports database The State Energy Efficient Appliance Rebate Program (SEEARP) reports database includes rebate reports...

  6. State Energy-Efficient Appliance Rebate Program: Volume 2 - Program...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State Energy-Efficient Appliance Rebate Program: Volume 2 - Program Results State Energy-Efficient Appliance Rebate Program: Volume 2 - Program Results View the report State...

  7. Fort Collins Utilities - Residential and Small Commercial Appliance...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Residential and Small Commercial Appliance Rebate Program Fort Collins Utilities - Residential and Small Commercial Appliance Rebate Program < Back Eligibility Residential Savings...

  8. EIA Energy Efficiency-Appliance Standards and Labeling Links

    U.S. Energy Information Administration (EIA) Indexed Site

    and enforcement requirements for residential appliances; final rule Energy Efficiency and Renewable Energy - Appliances & Commercial Equipment Standards, the program develops test...

  9. Four-County EMC- Residential Energy Efficiency Appliance Rebate Program

    Broader source: Energy.gov [DOE]

    Four-County EMC offers its customers $50 rebates for purchasing certain Energy Star appliances. Eligible appliances include refrigerators, dishwashers, clothes washers and freezers. The rebates are...

  10. Retrospective Evaluation of Appliance Price Trends

    SciTech Connect (OSTI)

    Dale, Larry; Antinori, Camille; McNeil, Michael; McMahon, James E.; Fujita, K. Sydny

    2008-07-20

    Real prices of major appliances (refrigerators, dishwashers, heating and cooling equipment) have been falling since the late 1970s despite increases in appliance efficiency and other quality variables. This paper demonstrates that historic increases in efficiency over time, including those resulting from minimum efficiency standards, incur smaller price increases than were expected by Department of Energy (DOE) forecasts made in conjunction with standards. This effect can be explained by technological innovation, which lowers the cost of efficiency, and by market changes contributing to lower markups and economies of scale in production of higher efficiency units. We reach four principal conclusions about appliance trends and retail price setting: 1. For the past several decades, the retail price of appliances has been steadily falling while efficiency has been increasing. 2. Past retail price predictions made by DOE analyses of efficiency standards, assuming constant prices over time, have tended to overestimate retail prices. 3. The average incremental price to increase appliance efficiency has declined over time. DOE technical support documents have typically overestimated this incremental price and retail prices. 4. Changes in retail markups and economies of scale in production of more efficient appliances may have contributed to declines in prices of efficient appliances.

  11. Impact of Natural Gas Appliances on Pollutant Levels in California Homes

    E-Print Network [OSTI]

    Mullen, Nasim A.

    2014-01-01

    35): 5661-67. Impact of Natural Gas Appliances on PollutantO-. ! Natural Gas Appliances on PollutantA! =? >7! =::! Impact of Natural Gas Appliances on Pollutant

  12. Pollutant Emission Factors from Residential Natural Gas Appliances: A Literature Review

    E-Print Network [OSTI]

    Traynor, G.W.

    2011-01-01

    distributions from residential natural gas appliances. CH 4ng/J) distribution from residential natural gas appliances.from Residential Natural Gas Appliances: A Literature Review

  13. West Virginia Consumers Have Appliance Rebate 'Trifecta'

    Broader source: Energy.gov [DOE]

    West Virginians didn’t waste any time in taking advantage of the Energy Efficient Appliance Rebate Program. Only three months in, and almost half of the available $1.7 million is already spoken for.

  14. Incorporating Experience Curves in Appliance Standards Analysis

    E-Print Network [OSTI]

    Desroches, Louis-Benoit

    2012-01-01

    appliance price trends. Energy Policy 37, 597-605. Day, G.learning hypothesis. Energy Policy 37, 2525-2535. Fusfeld,curves for wind farms. Energy Policy 33, 133-150. Klaassen,

  15. Wyoming's Appliance Rebate Program Surges Ahead

    Broader source: Energy.gov [DOE]

    Wyoming’s appliance rebate program, which opened in April, continues through this fall. Residents of the Equality State can receive rebates on ENERGY STAR certified clothes washers, dishwashers, water heaters and gas furnaces ranging from $50 to $250.

  16. 2009 CALIFORNIA RESIDENTIAL APPLIANCE SATURATION STUDY

    E-Print Network [OSTI]

    data, household energy consumption data and weather information to calculate average annual information on appliances, equipment, and general consumption patterns. Data collection was completed in early 2010. The study yielded energy consumption estimates for 27 electric and 10 natural gas

  17. Equator Appliance: ENERGY STAR Referral (EZ 3720)

    Broader source: Energy.gov [DOE]

    DOE referred Equator Appliance clothes washer EZ 3720 to EPA, brand manager of the ENERGY STAR program, for appropriate action after DOE testing revealed that the model does not meet ENERGY STAR requirements.

  18. Tips: Kitchen Appliances | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Most of the energy used by a dishwasher is for water heating. The EnergyGuide label estimates how much power is needed per year to run the appliance and to heat the water...

  19. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01

    main conclusions about off-grid markets for DC appliances,and power systems. Mature Off-Grid Markets for DC Appliancesapplications include off-grid residential, telecom, remote

  20. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01

    Ovens Electric Heat Pumps Geothermal Heat Pumps Solar WaterOvens Appliance DC-internal product power (Watts) Personal Computers and Related Equipment Rechargeable Electronics Refrigerators Room Air Conditioners Security Systems Solar

  1. State Appliance Standards (released in AEO2009)

    Reports and Publications (EIA)

    2009-01-01

    State appliance standards have existed for decades, starting with Californias enforcement of minimum efficiency requirements for refrigerators and several other products in 1979. In 1987, recognizing that different efficiency standards for the same products in different states could create problems for manufacturers, Congress enacted the National Appliance Energy Conservation Act (NAECA), which initially covered 12 products. The Energy Policy Act of 1992 (EPACT92), EPACT2005, and EISA2007 added additional residential and commercial products to the 12 products originally specified under NAECA.

  2. Non-intrusive appliance monitor apparatus

    DOE Patents [OSTI]

    Hart, George W. (Natick, MA); Kern, Jr., Edward C. (Lincoln, MA); Schweppe, Fred C. (Carlisle, MA)

    1989-08-15

    A non-intrusive monitor of energy consumption of residential appliances is described in which sensors, coupled to the power circuits entering a residence, supply analog voltage and current signals which are converted to digital format and processed to detect changes in certain residential load parameters, i.e., admittance. Cluster analysis techniques are employed to group change measurements into certain categories, and logic is applied to identify individual appliances and the energy consumed by each.

  3. Non-intrusive appliance monitor apparatus

    DOE Patents [OSTI]

    Hart, G.W.; Kern, E.C. Jr.; Schweppe, F.C.

    1989-08-15

    A non-intrusive monitor of energy consumption of residential appliances is described in which sensors, coupled to the power circuits entering a residence, supply analog voltage and current signals which are converted to digital format and processed to detect changes in certain residential load parameters, i.e., admittance. Cluster analysis techniques are employed to group change measurements into certain categories, and logic is applied to identify individual appliances and the energy consumed by each. 9 figs.

  4. BSH: Order (2013-CE-2001)

    Broader source: Energy.gov [DOE]

    DOE ordered BSH Home Appliances Corp. to pay a $8,000 civil penalty after finding BSH had failed to certify that certain models of residential clothes washers comply with the applicable energy/water conservation standards.

  5. Material World: Forecasting Household Appliance Ownership in a Growing Global Economy

    SciTech Connect (OSTI)

    Letschert, Virginie; McNeil, Michael A.

    2009-03-23

    Over the past years the Lawrence Berkeley National Laboratory (LBNL) has developed an econometric model that predicts appliance ownership at the household level based on macroeconomic variables such as household income (corrected for purchase power parity), electrification, urbanization and climate variables. Hundreds of data points from around the world were collected in order to understand trends in acquisition of new appliances by households, especially in developing countries. The appliances covered by this model are refrigerators, lighting fixtures, air conditioners, washing machines and televisions. The approach followed allows the modeler to construct a bottom-up analysis based at the end use and the household level. It captures the appliance uptake and the saturation effect which will affect the energy demand growth in the residential sector. With this approach, the modeler can also account for stock changes in technology and efficiency as a function of time. This serves two important functions with regard to evaluation of the impact of energy efficiency policies. First, it provides insight into which end uses will be responsible for the largest share of demand growth, and therefore should be policy priorities. Second, it provides a characterization of the rate at which policies affecting new equipment penetrate the appliance stock. Over the past 3 years, this method has been used to support the development of energy demand forecasts at the country, region or global level.

  6. Chemical order in Ge{sub x}As{sub y}Se{sub 1-x-y} glasses probed by high resolution X-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Xu, S. W. [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); College of Applied Sciences, Beijing University of Technology, Beijing100124 (China); Wang, R. P.; Luther-Davies, B. [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Kovalskiy, A. [Department of Physics and Astronomy, Austin Peay State University, Clarksville, Tennessee 37043 (United States); Miller, A. C.; Jain, H. [Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015-3195 (United States)

    2014-02-28

    We have measured high-resolution x-ray photoelectron spectra of Ge{sub x}As{sub y}Se{sub 1-x-y} glasses with a mean coordination number (MCN) from 2.2 to 2.78. The valence band spectra showed that a number of Se–Se–Se trimers can be found in Se-rich samples, whilst multiband features induced by phase separation can be observed in extremely Se-poor samples. When the Ge, As, and Se 3d spectra were decomposed into several doublets, which correspond, respectively, to different chemical environments, the perfect AsSe{sub 3/2} pyramidal and GeSe{sub 4/2} tetrahedral structures in Se-rich samples gradually evolved into defect structures, including As–As and Ge–Ge homopolar bonds, with increasing Ge and As concentrations. Two transition-like features were found at MCN?=?2.5 and 2.64–2.72 that correspond first to the disappearance of Se-chains in the glass network and, subsequently, destruction of the perfect GeSe{sub 4/2} tetrahedral structures, respectively.

  7. Distinctive Appliances: Order (2015-CE-14019) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based| Department8,Department of Energy2EM's CleanupPower

  8. Tips: Shopping for Appliances | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data CenterFinancialInvestingRenewableTeach and Learn5Shopping for Appliances

  9. Hydrophilic structures for condensation management in refrigerator appliances

    DOE Patents [OSTI]

    Kuehl, Steven John; Vonderhaar, John J; Wu, Guolian; Wu, Mianxue

    2014-10-21

    A refrigerator appliance that includes a freezer compartment having a freezer compartment door, and a refrigeration compartment having at least one refrigeration compartment door. The appliance further includes a mullion with an exterior surface. The mullion divides the compartments and the exterior surface directs condensation toward a transfer point. The appliance may also include a cabinet that houses the compartments and has two sides, each with an exterior surface. Further, at least one exterior surface directs condensation toward a transfer point.

  10. Impact of Natural Gas Appliances on Pollutant Levels in California Homes

    E-Print Network [OSTI]

    Mullen, Nasim A.

    2014-01-01

    35): 5661-67. Impact of Natural Gas Appliances on Pollutant6'G%! S'4-. ! Impact of Natural Gas Appliances on PollutantNot applicable Impact of Natural Gas Appliances on Pollutant

  11. ISSUANCE 2015-07-14: Appliance Standards and Rulemaking Federal...

    Broader source: Energy.gov (indexed) [DOE]

    Meetings and Webinars. asracsummerwebinars.pdf More Documents & Publications ISSUANCE 2015-05-26:Appliance Standards and Rulemaking Federal Advisory Committee: Notice of Open...

  12. Low-cost Appliance State Sensing for Energy Disaggregation

    E-Print Network [OSTI]

    Wu, Tianji

    2012-01-01

    the power consumption of a power cycle of appliances [KJ12].the expected length of a power cycle. Although current NILM

  13. ISSUANCE 2015-06-30: Appliance Standards and Rulemaking Federal...

    Energy Savers [EERE]

    Advisory Committee: Notice of Intent to Establish the Central Air Conditioners and Heat Pumps Working Group ISSUANCE 2015-06-30: Appliance Standards and Rulemaking Federal Advisory...

  14. Buying an Appliance this Holiday Season? ENERGY STAR Products...

    Broader source: Energy.gov (indexed) [DOE]

    When shopping for appliances or electronics for the holidays, look for the ENERGY STAR and EnergyGuide labels. | Photo by Dennis Schroeder, NREL 22090. When shopping for...

  15. Appliance Standards Update and Review of Certification, Compliance...

    Energy Savers [EERE]

    of Certification, Compliance and Enforcement Powerpoint Presentation for ASHRAE Conference, January 31, 2011 Appliance Standards Update and Review of Certification, Compliance...

  16. Appliance Standards Program Schedule - CCE Overview and Update...

    Energy Savers [EERE]

    October 26, 2011 This document is Appliance Standards Program Schedule & CCE Overview and Update presentation, dated 10262011, presented to Energy-Efficiency Advocacy Groups...

  17. Robot in Society: Friend or Appliance? Cynthia Breazeal #

    E-Print Network [OSTI]

    Robot in Society: Friend or Appliance? Cynthia Breazeal # Massachusetts Institute of Technology Artificial Intelligence Laboratory 545 Technology Square, Room 938 Cambridge, MA 02139 USA email: cynthia

  18. ISSUANCE 2015-05-26:Appliance Standards and Rulemaking Federal...

    Office of Environmental Management (EM)

    and Rulemaking Federal Advisory Committee: Notice of Open Meeting and Webinar ISSUANCE 2015-05-26:Appliance Standards and Rulemaking Federal Advisory Committee: Notice of Open...

  19. Estimating Appliance and Home Electronic Energy Use | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    how much electricity your appliances and home electronics use: The Energy Guide Label, which shows the estimated yearly operating cost and estimated yearly electricity use...

  20. Webinar: Appliance Standards and Rulemaking Federal Advisory Committee

    Broader source: Energy.gov [DOE]

    DOE is conducting a public meeting and webinar regarding the Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC). For more information, please visit the ASRAC page. 

  1. Saving Energy and Money with Appliance and Equipment Standards...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Equipment Standards in the United States Overview Appliance and equipment efficien- cy standards have served as one of the nation's most effective policies for...

  2. DOE Announces Tougher Enforcement of Appliance Standards Reporting...

    Energy Savers [EERE]

    certification reports and compliance statements as part of enhanced enforcement of DOE's energy efficiency appliance standards program. Under federal law, manufacturers of some...

  3. Measure Guideline: Combustion Safety for Natural Draft Appliances Through Appliance Zone Isolation

    SciTech Connect (OSTI)

    Fitzgerald, J.; Bohac, D.

    2014-04-01

    This measure guideline covers how to assess and carry out the isolation of natural draft combustion appliances from the conditioned space of low-rise residential buildings. It deals with combustion appliances located either within the living space in enclosed closets or side rooms or outside the living space in an adjacent area like an attic or garage. This subset of houses does not require comprehensive combustion safety tests and simplified prescriptive procedures can be used to address safety concerns. This allows residential energy retrofit contractors inexperienced in advanced combustion safety testing to effectively address combustion safety issues and allow energy retrofits including tightening and changes to distribution and ventilation systems to proceed.

  4. Kitchen Appliance Upgrades Improve Water Efficiency at U.S. Department...

    Energy Savers [EERE]

    Kitchen Appliance Upgrades Improve Water Efficiency at U.S. Department of Defense Exchange Facilities Kitchen Appliance Upgrades Improve Water Efficiency at U.S. Department of...

  5. Trends in the cost of efficiency for appliances and consumer electronics

    E-Print Network [OSTI]

    Desroches, Louis-Benoit

    2013-01-01

    appliances and consumer electronics Louis-Benoit Desroches,appliances and consumer electronics have decreased in realappliances and consumer electronics are likely to diminish

  6. 5th Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency...

  7. Data Availability in Appliance Standards and Labeling Program Development and Evaluation

    E-Print Network [OSTI]

    Romankiewicz, John

    2014-01-01

    by design option) Data Availability and Use InternationallyData Availability in Appliance Standards and Labelingemployer. Data Availability in Appliance Standards and

  8. 6 mW and 30 mW laser threshold for respectively 1st Brillouin Stokes order in a Ge10As24Se68 chalcogenide fiber.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    fiber made of chalcogenide glass to make a BFL [5]. A 3 meter long suspended-core AsSe chalcogenide have replaced the suspended-core chalcogenide AsSe previously used by a microstructured Ge10As24Se68 diameter of the AsSe suspended- core fiber is 240 µm and the core diameter d is 3.8 µm. The mode effective

  9. Introducing a digital library reading appliance into a reading group

    E-Print Network [OSTI]

    Marshall, Cathy

    Introducing a digital library reading appliance into a reading group Catherine C. Marshall, Morgan will we read digital library materials? This paper describes the reading practices of an on-going reading group, and how these practices changed when we introduced XLibris, a digital library reading appliance

  10. Development of Machine Vision Technology for Railcar Safety Appliance Inspection

    E-Print Network [OSTI]

    Todorovic, Sinisa

    *Computer Vision and Robotics Laboratory - Department of Electrical and Computer Engineering University American trains depart a terminal or rail yard, many aspects of the cars and locomotives undergo inspection car-specific appliances. Safety appliances have been required on U.S. railcars since 1893 when

  11. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  12. Incorporating Experience Curves in Appliance Standards Analysis

    SciTech Connect (OSTI)

    Garbesi, Karina; Chan, Peter; Greenblatt, Jeffery; Kantner, Colleen; Lekov, Alex; Meyers, Stephen; Rosenquist, Gregory; Buskirk, Robert Van; Yang, Hung-Chia; Desroches, Louis-Benoit

    2011-10-31

    The technical analyses in support of U.S. energy conservation standards for residential appliances and commercial equipment have typically assumed that manufacturing costs and retail prices remain constant during the projected 30-year analysis period. There is, however, considerable evidence that this assumption does not reflect real market prices. Costs and prices generally fall in relation to cumulative production, a phenomenon known as experience and modeled by a fairly robust empirical experience curve. Using price data from the Bureau of Labor Statistics, and shipment data obtained as part of the standards analysis process, we present U.S. experience curves for room air conditioners, clothes dryers, central air conditioners, furnaces, and refrigerators and freezers. These allow us to develop more representative appliance price projections than the assumption-based approach of constant prices. These experience curves were incorporated into recent energy conservation standards for these products. The impact on the national modeling can be significant, often increasing the net present value of potential standard levels in the analysis. In some cases a previously cost-negative potential standard level demonstrates a benefit when incorporating experience. These results imply that past energy conservation standards analyses may have undervalued the economic benefits of potential standard levels.

  13. Randomized Load Control: A Simple Distributed Approach for Scheduling Smart Appliances

    E-Print Network [OSTI]

    Thiébaux, Sylvie

    program- ming their washing machine, dryer, dishwasher, electric ve- hicle, or other appliance in this way

  14. Research & Development Roadmap for Next-Generation Appliances

    SciTech Connect (OSTI)

    Goetzler, William; Sutherland, Timothy; Foley, Kevin

    2012-03-01

    Appliances present an attractive opportunity for near-term energy savings in existing building, because they are less expensive and replaced more regularly than heating, ventilation, and air-conditioning (HVAC) systems or building envelope components. This roadmap targets high-priority research and development (R&D), demonstration and commercialization activities that could significantly reduce residential appliance energy consumption. The main objective of the roadmap is to seek activities that accelerate the commercialization of high-efficiency appliance technologies while maintaining the competitiveness of American industry. The roadmap identified and evaluated potential technical innovations, defined research needs, created preliminary research and development roadmaps, and obtained stakeholder feedback on the proposed initiatives.

  15. The bonding, charge distribution, spin ordering, optical, and elastic properties of four MAX phases Cr{sub 2}AX (A?=?Al or Ge, X?=?C or N): From density functional theory study

    SciTech Connect (OSTI)

    Li, Neng; Mo, Yuxiang; Ching, Wai-Yim

    2013-11-14

    In this work, we assess a full spectrum of properties (chemical bonding, charge distribution, spin ordering, optical, and elastic properties) of Cr{sub 2}AC (A?=?Al, Ge) and their hypothetical nitride counterparts Cr{sub 2}AN (A?=?Al, Ge) based on density functional theory calculations. The calculated total energy values indicate that a variety of spin ordering of these four compounds depending on interlayer-interactions between M-A and M-X within the sublattice, which is supported by bonding analysis. MAX phase materials are discovered to possess exotic magnetic properties which indicates that these materials could serve as promising candidates for novel layered magnetic materials for various electronic and spintronic applications. Further analysis of optical properties for two polarization vectors of Cr{sub 2}AX shows that the reflectivity is high in the visible-ultraviolet region up to ?15?eV suggesting Cr{sub 2}AX as a promising candidate for use as a coating material. The elastic coefficients (C{sub ij}) and bulk mechanical properties [bulk modulus (K), shear modulus (G), Young's modulus (E), Poisson's ratio (?), and Pugh ratio (G/K)] of these four Cr{sub 2}AX compounds are also calculated and analyzed, which pave the way to predict or design new MAX phases that are less brittle or tougher by having a lower G/K value or higher ?.

  16. Estimating Appliance and Home Electronic Energy Use | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Estimate the energy consumption and cost to operate an appliance when making a purchase. Investing in an energy-efficient product may save you money in the long run. | Photo...

  17. Cowlitz County PUD- Residential Energy Efficient Appliance Rebate Program

    Broader source: Energy.gov [DOE]

    Cowlitz County PUD offers the EnergySHARE Plus appliance rebate program to its residential customers. Rebates are offered for Energy Star clothes washers, refrigerators and freezers (including the...

  18. Taunton Municipal Lighting Plant- Residential Energy Star Appliance Rebate Program

    Broader source: Energy.gov [DOE]

    Customers of Taunton Municipal Lighting Plant (TMLP) are eligible for rebates on energy efficient appliances for the home. Clothes washers, dishwashers, refrigerators and room AC units are eligible...

  19. Super Cool Appliance Design Wins Student Competition | Department...

    Energy Savers [EERE]

    facts? Max Tech and Beyond challenged university teams to create the next generation of ultra-low energy use appliances by going beyond the current "max tech." A team of...

  20. ASKO Appliances: Proposed Penalty (2012-CE-19/2004)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that ASKO Appliances, Inc. failed to certify residential clothes washers and dishwashers as compliant with the applicable energy and water conservation standards.

  1. Midea Washing Appliance: Proposed Penalty (2011-CE-1903)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Midea Washing Appliances Mfg. Co., Ltd. failed to certify a variety of dishwashers as compliant with the applicable water and energy conservation standards.

  2. Buying an Appliance this Holiday Season? ENERGY STAR Products...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Efficiency and Renewable Energy How can I participate? Look for the ENERGY STAR label to find energy-efficient appliances. It's the holiday season, which is a perfect time...

  3. Energy-Efficient Home Appliances Can Save You Money | Department...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Efficiency and Renewable Energy How can I participate? Look for the EnergyGuide label to find out the cost of operating an appliance over the long term, and shop for ENERGY...

  4. Managing Supply Chain Key for Hawaii Appliance Rebate Program

    Broader source: Energy.gov [DOE]

    Hawaii's appliance rebate program delivered 4,300 rebates to Hawaiians in just three days. And on just the first day of program, almost 4,000 ENERGY STAR qualified refrigerators were sold.

  5. Microwave vs. Electric Kettle: Which Appliance Is in Hot Water...

    Broader source: Energy.gov (indexed) [DOE]

    which should heat your water this winter. No matter whether your hot drink of choice is tea, coffee, or cocoa, one of these appliances is more efficient than the other. But which...

  6. Modeling diffusion of electrical appliances in the residential sector

    SciTech Connect (OSTI)

    McNeil, Michael A.; Letschert, Virginie E.

    2009-11-22

    This paper presents a methodology for modeling residential appliance uptake as a function of root macroeconomic drivers. The analysis concentrates on four major energy end uses in the residential sector: refrigerators, washing machines, televisions and air conditioners. The model employs linear regression analysis to parameterize appliance ownership in terms of household income, urbanization and electrification rates according to a standard binary choice (logistic) function. The underlying household appliance ownership data are gathered from a variety of sources including energy consumption and more general standard of living surveys. These data span a wide range of countries, including many developing countries for which appliance ownership is currently low, but likely to grow significantly over the next decades as a result of economic development. The result is a 'global' parameterization of appliance ownership rates as a function of widely available macroeconomic variables for the four appliances studied, which provides a reliable basis for interpolation where data are not available, and forecasting of ownership rates on a global scale. The main value of this method is to form the foundation of bottom-up energy demand forecasts, project energy-related greenhouse gas emissions, and allow for the construction of detailed emissions mitigation scenarios.

  7. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  8. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  9. Electrical appliance energy consumption control methods and electrical energy consumption systems

    DOE Patents [OSTI]

    Donnelly, Matthew K. (Kennewick, WA); Chassin, David P. (Pasco, WA); Dagle, Jeffery E. (Richland, WA); Kintner-Meyer, Michael (Richland, WA); Winiarski, David W. (Kennewick, WA); Pratt, Robert G. (Kennewick, WA); Boberly-Bartis, Anne Marie (Alexandria, VA)

    2008-09-02

    Electrical appliance energy consumption control methods and electrical energy consumption systems are described. In one aspect, an electrical appliance energy consumption control method includes providing an electrical appliance coupled with a power distribution system, receiving electrical energy within the appliance from the power distribution system, consuming the received electrical energy using a plurality of loads of the appliance, monitoring electrical energy of the power distribution system, and adjusting an amount of consumption of the received electrical energy via one of the loads of the appliance from an initial level of consumption to an other level of consumption different than the initial level of consumption responsive to the monitoring.

  10. Electrical appliance energy consumption control methods and electrical energy consumption systems

    DOE Patents [OSTI]

    Donnelly, Matthew K. (Kennewick, WA); Chassin, David P. (Pasco, WA); Dagle, Jeffery E. (Richland, WA); Kintner-Meyer, Michael (Richland, WA); Winiarski, David W. (Kennewick, WA); Pratt, Robert G. (Kennewick, WA); Boberly-Bartis, Anne Marie (Alexandria, VA)

    2006-03-07

    Electrical appliance energy consumption control methods and electrical energy consumption systems are described. In one aspect, an electrical appliance energy consumption control method includes providing an electrical appliance coupled with a power distribution system, receiving electrical energy within the appliance from the power distribution system, consuming the received electrical energy using a plurality of loads of the appliance, monitoring electrical energy of the power distribution system, and adjusting an amount of consumption of the received electrical energy via one of the loads of the appliance from an initial level of consumption to an other level of consumption different than the initial level of consumption responsive to the monitoring.

  11. Abstract-In this paper we evaluate the energy and economic consequences of appliance remanufacturing relative to purchasing

    E-Print Network [OSTI]

    Gutowski, Timothy

    appliances: refrigerator, dishwasher, and clothes washer. The results show that, despite savings achieved presented in this report constitute major residential appliances: refrigerator, dishwasher, and clothes

  12. An Analysis of the Price Elasticity of Demand for Household Appliances

    E-Print Network [OSTI]

    Dale, Larry

    2008-01-01

    and Appliance Price………………………………6 LIST OF TABLES Table 1.1estimates in this table. 7 Average brand price elasticityTable 2.2 Appliance Refrigerators Clothes Washers Dishwashers Economic Variables Price

  13. Realized and Projected Impacts of U.S. Energy Efficiency Standards for Residential and Commercial Appliances

    E-Print Network [OSTI]

    Meyers, Stephen P.

    2008-01-01

    into the Energy Policy Act of 1992, and updates becameEnergy Efficiency Standards for Residential Appliances: 2004 Update,Energy Efficiency Standards for Residential and Commercial Appliances Included in This Study Product Year Effective for Original Standard* and Updates

  14. Trends in the cost of efficiency for appliances and consumer electronics

    E-Print Network [OSTI]

    Desroches, Louis-Benoit

    2013-01-01

    energy efficiency programs around the world focus on consumer goods such as appliances, HVAC (heating, ventilation, and air conditioning)

  15. Nonserial Dynamic Programming with Applications in Smart Home Appliances Scheduling Part II: Nonserial Dynamic Programming

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    Nonserial Dynamic Programming with Applications in Smart Home Appliances Scheduling ­ Part II) is presented. The problem in this paper generalizes the smart home appliances scheduling problem introduced the following smart home appliances scheduling problem described in the companion paper [3], as the later

  16. Nonserial Dynamic Programming with Applications in Smart Home Appliances Scheduling Part I: Precedence Graph Simplification

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    Nonserial Dynamic Programming with Applications in Smart Home Appliances Scheduling ­ Part I-- In this and a companion paper a dynamic pro- gramming (DP) approach to solve a smart home appliances scheduling problem to the smart home appliances scheduling problem considered in [1], [2]. The problem seeks to determine

  17. McAfee, Inc. McAfee Web Gateway WG5000 and WG5500 Appliances

    E-Print Network [OSTI]

    McAfee, Inc. McAfee Web Gateway WG5000 and WG5500 Appliances Hardware Models: 5000, 5500; Firmware Policy, Version 1.9 August 17, 2012 McAfee Web Gateway WG5000 and WG5500 Appliances Page 2 of 32 © 2012............................................................................................................................4 2 MCAFEE WEB GATEWAY WG5000 AND WG5500 APPLIANCES ................................5 2.1 OVERVIEW

  18. Less Watts, More Performance: An Intelligent Storage Engine for Data Appliances

    E-Print Network [OSTI]

    Teubner, Jens

    how Ibex reduces data movement, CPU usage, and overall energy consumption in database appliances.lastname}@inf.ethz.ch Jens Teubner DBIS Group, Dept. of Computer Science TU Dortmund University, Germany jens Appliance, Energy, FPGA, Ibex 1. INTRODUCTION Modern data appliances such as IBM's Netezza [6] and Oracle

  19. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  20. International comparison of product certification and verification methods for appliances

    SciTech Connect (OSTI)

    Zhou, Nan; Romankiewicz, John; Fridley, David; Zheng, Nina

    2012-06-01

    Enforcement of appliance standards and consumer trust in appliance labeling are important foundations of growing a more energy efficient economy. Product certification and verification increase compliance rates which in turn increase both energy savings and consumer trust. This paper will serve two purposes: 1) to review international practices for product certification and verification as they relate to the enforcement of standards and labeling programs in the U.S., E.U., Australia, Japan, Canada, and China; and 2) to make recommendations for China to implement improved certification processes related to their mandatory standards and labeling program such as to increase compliance rates and energy savings potential.

  1. International Comparison of Product Certification and Verification Methods for Appliances

    SciTech Connect (OSTI)

    Zhou, Nan; Romankiewicz, John; Fridley, David; Zheng, Nina

    2012-06-01

    Enforcement of appliance standards and consumer trust in appliance labeling are important foundations of growing a more energy efficient economy. Product certification and verification increase compliance rates which in turn increase both energy savings and consumer trust. This paper will serve two purposes: 1) to review international practices for product certification and verification as they relate to the enforcement of standards and labeling programs in the U.S., E.U., Australia, Japan, Canada, and China; and 2) to make recommendations for China to implement improved certification processes related to their mandatory standards and labeling program such as to increase compliance rates and energy savings potential.

  2. ISSUANCE 2015-06-08: Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

    Broader source: Energy.gov [DOE]

    Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

  3. GE's Digital Marketplace to Revolutionize Manufacturing | GE...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    an open online space for companies to collaborate and transform how they design and manufacture their products in the future NISKAYUNA, NY, June 2, 2015 - GE (NYSE:GE), a leading...

  4. Rebound Effect in Energy Efficient Appliance Adopting Households 

    E-Print Network [OSTI]

    Glenn, Jacob Matthew

    2014-12-10

    This paper uses data from smart meter technology to estimate the occurrence of energy rebound, a “substitution” and “income’ effect where the price-per-use of an appliance falls relative to its energy efficiency. This causes households to have more...

  5. Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring

    E-Print Network [OSTI]

    Wang, Yongcai

    in such buildings, researches in the field of smart building and smart grid are exploring an efficient energy high costs to the smart meter deploy- ment, data collection and system maintenance. In practiceSmart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring Xiaohong

  6. Chinese Home Appliance Manufacturing: A Case Study of TCL Corporation

    E-Print Network [OSTI]

    Brock, David

    Chinese Home Appliance Manufacturing: A Case Study of TCL Corporation Ping Wang The Ohio State of the Chinese economy. In general, it is hard to correlate the contribution of effective logistics systems the year 2020. Complicating matters, Chinese statistics show that for 2000 nearly 14.6 billion passengers

  7. Combustion Safety for Appliances Using Indoor Air (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-05-01

    This measure guideline covers how to assess and carry out the combustion safety procedures for appliances and heating equipment that uses indoor air for combustion in low-rise residential buildings. Only appliances installed in the living space, or in an area freely communicating with the living space, vented alone or in tandem with another appliance are considered here. A separate measure guideline addresses combustion appliances located either within the living space in enclosed closets or side rooms or outside the living space in an adjacent area like an attic or garage that use outdoor air for combustion. This document is for inspectors, auditors, and technicians working in homes where energy upgrades are being conducted whether or not air infiltration control is included in the package of measures being applied. In the indoor combustion air case, guidelines summarized here are based on language provided in several of the codes to establish minimum requirements for the space using simplified prescriptive measures. In addition, building performance testing procedures are provided by testing agencies. The codes in combination with the test procedures offer comprehensive combustion safety coverage to address safety concerns, allowing inexperienced residential energy retrofit inspectors to effectively address combustion safety issues and allow energy retrofits to proceed.

  8. Cost and Performance Comparison Of Stationary Hydrogen Fueling Appliances

    E-Print Network [OSTI]

    Cost and Performance Comparison Of Stationary Hydrogen Fueling Appliances Duane B. Myers, Gregory D.directedtechnologies.com/ pubs/DTI_Task2_Report.html. 1 Proceedings of the 2002 U.S. DOE Hydrogen Program Review NREL/CP-610 vehicles (FCV's) and the cost of hydrogen produced by these HFA's. In previous studies we evaluated

  9. A System for Smart Home Control of Appliances based on Timer and Speech Interaction

    E-Print Network [OSTI]

    Haque, S M Anamul; Islam, Md Ashraful

    2010-01-01

    The main objective of this work is to design and construct a microcomputer based system: to control electric appliances such as light, fan, heater, washing machine, motor, TV, etc. The paper discusses two major approaches to control home appliances. The first involves controlling home appliances using timer option. The second approach is to control home appliances using voice command. Moreover, it is also possible to control appliances using Graphical User Interface. The parallel port is used to transfer data from computer to the particular device to be controlled. An interface box is designed to connect the high power loads to the parallel port. This system will play an important role for the elderly and physically disable people to control their home appliances in intuitive and flexible way. We have developed a system, which is able to control eight electric appliances properly in these three modes.

  10. TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergyPlan | Department ofSUPPLEMENTSwitzerland|ofSessions |2Energy 71 - In3 -4

  11. TEE-0077 - In the Matter of GE Appliances & Lighting | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergyPlan | Department ofSUPPLEMENTSwitzerland|ofSessions |2Energy 71 - In37 -

  12. VEA-0016 - In the Matter of GE Appliances | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on DeliciousMathematics And Statistics » USAJobs Search USAJobs SearchWater-SavingofCode | Department2 16 I N S|5 - In6 -

  13. Growth and characterization of isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched [sup 70]Ge and [sup 74]Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm[sup 3] volume. To our knowledge, we have grown the first [sup 70]Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be [approximately]2 [times] cm[sup [minus]3] which is two order of magnitude better that of [sup 74]Ge crystals previously grown by two different groups. Isotopic enrichment of the [sup 70]Ge and the [sup 74]Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  14. Growth and characterization of isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals

    SciTech Connect (OSTI)

    Itoh, K.

    1992-10-01

    Isotopically enriched {sup 70}Ge and {sup 74}Ge single crystals were successfully gown by a newly developed vertical Bridgman method. The system allows us to reliably grow high purity Ge single crystals of approximately 1 cm{sup 3} volume. To our knowledge, we have grown the first {sup 70}Ge single crystal. The electrically active chemical impurity concentration for both crystals was found to be {approximately}2 {times} cm{sup {minus}3} which is two order of magnitude better that of {sup 74}Ge crystals previously grown by two different groups. Isotopic enrichment of the {sup 70}Ge and the {sup 74}Ge crystals is 96.3% and 96.8%, respectively. The residual chemical impurities present in both crystals were identified as phosphorus, copper, aluminum, and indium. A wide variety of experiments which take advantage of the isotopic purity of our crystals are discussed.

  15. Pacific Northwest GridWise™ Testbed Demonstration Projects; Part II. Grid Friendly™ Appliance Project

    SciTech Connect (OSTI)

    Hammerstrom, Donald J.; Brous, Jerry; Chassin, David P.; Horst, Gale R.; Kajfasz, Robert; Michie, Preston; Oliver, Terry V.; Carlon, Teresa A.; Eustis, Conrad; Jarvegren, Olof M.; Marek, W.; Munson, Ryan L.; Pratt, Robert G.

    2007-10-01

    Fifty residential electric water heaters and 150 new residential clothes dryers were modified to respond to signals received from underfrequency, load-shedding appliance controllers. Each controller monitored the power-grid voltage signal and requested that electrical load be shed by its appliance whenever electric power-grid frequency fell below 59.95 Hz. The controllers and their appliances were installed and monitored for more than a year at residential sites at three locations in Washington and Oregon. The controllers and their appliances responded reliably to each shallow underfrequency event—an average of one event per day—and shed their loads for the durations of these events. Appliance owners reported that the appliance responses were unnoticed and caused little or no inconvenience for the homes’ occupants.

  16. An Analysis of the Price Elasticity of Demand for Household Appliances

    SciTech Connect (OSTI)

    Fujita, Kimberly; Dale, Larry; Fujita, K. Sydny

    2008-01-25

    This report summarizes our study of the price elasticity of demand for home appliances, including refrigerators, clothes washers, and dishwashers. In the context of increasingly stringent appliance standards, we are interested in what kind of impact the increased manufacturing costs caused by higher efficiency requirements will have on appliance sales. We begin with a review of existing economics literature describing the impact of economic variables on the sale of durable goods.We then describe the market for home appliances and changes in this market over the past 20 years, performing regression analysis on the shipments of home appliances and relevant economic variables including changes to operating cost and household income. Based on our analysis, we conclude that the demand for home appliances is price inelastic.

  17. Progress toward Producing Demand-Response-Ready Appliances

    SciTech Connect (OSTI)

    Hammerstrom, Donald J.; Sastry, Chellury

    2009-12-01

    This report summarizes several historical and ongoing efforts to make small electrical demand-side devices like home appliances more responsive to the dynamic needs of electric power grids. Whereas the utility community often reserves the word demand response for infrequent 2 to 6 hour curtailments that reduce total electrical system peak load, other beneficial responses and ancillary services that may be provided by responsive electrical demand are of interest. Historically, demand responses from the demand side have been obtained by applying external, retrofitted, controlled switches to existing electrical demand. This report is directed instead toward those manufactured products, including appliances, that are able to provide demand responses as soon as they are purchased and that require few, or no, after-market modifications to make them responsive to needs of power grids. Efforts to be summarized include Open Automated Demand Response, the Association of Home Appliance Manufacturer standard CHA 1, a simple interface being developed by the U-SNAP Alliance, various emerging autonomous responses, and the recent PinBus interface that was developed at Pacific Northwest National Laboratory.

  18. Laboratory Testing of Demand-Response Enabled Household Appliances

    SciTech Connect (OSTI)

    Sparn, B.; Jin, X.; Earle, L.

    2013-10-01

    With the advent of the Advanced Metering Infrastructure (AMI) systems capable of two-way communications between the utility's grid and the building, there has been significant effort in the Automated Home Energy Management (AHEM) industry to develop capabilities that allow residential building systems to respond to utility demand events by temporarily reducing their electricity usage. Major appliance manufacturers are following suit by developing Home Area Network (HAN)-tied appliance suites that can take signals from the home's 'smart meter,' a.k.a. AMI meter, and adjust their run cycles accordingly. There are numerous strategies that can be employed by household appliances to respond to demand-side management opportunities, and they could result in substantial reductions in electricity bills for the residents depending on the pricing structures used by the utilities to incent these types of responses. The first step to quantifying these end effects is to test these systems and their responses in simulated demand-response (DR) conditions while monitoring energy use and overall system performance.

  19. Laboratory Testing of Demand-Response Enabled Household Appliances

    SciTech Connect (OSTI)

    Sparn, B.; Jin, X.; Earle, L.

    2013-10-01

    With the advent of the Advanced Metering Infrastructure (AMI) systems capable of two-way communications between the utility's grid and the building, there has been significant effort in the Automated Home Energy Management (AHEM) industry to develop capabilities that allow residential building systems to respond to utility demand events by temporarily reducing their electricity usage. Major appliance manufacturers are following suit by developing Home Area Network (HAN)-tied appliance suites that can take signals from the home's 'smart meter,' a.k.a. AMI meter, and adjust their run cycles accordingly. There are numerous strategies that can be employed by household appliances to respond to demand-side management opportunities, and they could result in substantial reductions in electricity bills for the residents depending on the pricing structures used by the utilities to incent these types of responses.The first step to quantifying these end effects is to test these systems and their responses in simulated demand-response (DR) conditions while monitoring energy use and overall system performance.

  20. Blue Coat Systems, Inc. Secure Web Gateway Virtual Appliance-V100

    E-Print Network [OSTI]

    Blue Coat Systems, Inc. Secure Web Gateway Virtual Appliance-V100 Software Version: 6.5.2.8 FIPS@corsec.com http://www.bluecoat.com http://www.corsec.com #12;Secure Web Gateway Virtual Appliance-V100 Security Policy, Version 0.5 July 25, 2014 Blue Coat Secure Web Gateway Virtual Appliance-V100 Page 2 of 33 © 2014

  1. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311

  2. T-531: The WebVPN implementation on Cisco Adaptive Security Appliances...

    Energy Savers [EERE]

    implementation on Cisco Adaptive Security Appliances (ASA) 5500 series devices with software before 8.2(3) PLATFORM: Listed Vunerable Platform Details ABSTRACT: The WebVPN...

  3. Evaluating the Safety of a Natural Gas Home Refueling Appliance (HRA)

    SciTech Connect (OSTI)

    Not Available

    2005-04-01

    A fact sheet summarizing the National Renewable Energy Laboratory safety evaluation of Phill, Fuelmaker Corporation's natural gas home refueling appliance, used to fill CNG vehicles at home.

  4. An Exploration of Innovation and Energy Efficiency in an Appliance Industry

    E-Print Network [OSTI]

    Taylor, Margaret

    2013-01-01

    in products and processes,” “innovation breakthroughs,” “and various innovation counts such as “new products andconduct of innovation in a single appliance ”product. ” The

  5. Realized and prospective impacts of U.S. energy efficiency standards for residential appliances: 2004 update

    E-Print Network [OSTI]

    Meyers, Stephen; McMahon, James; McNeil, Michael

    2005-01-01

    Energy Efficiency Standards for Residential Appliances : 2004 Updateenergy savings due to the original standard and any updatesor energy consumption and the actual values. For updates

  6. 2nd Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Rulemakings - Implementation Report: Energy Conservation Standards Activities 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency Rulemakings -...

  7. 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 3rd Semi-Annual Report to Congress...

  8. 4th Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Secretary on February 2008. congressionalreport0208.pdf More Documents & Publications 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency Rulemakings -...

  9. 1st Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    Secretary on August 2006. implementationreport0806.pdf More Documents & Publications 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency Rulemakings -...

  10. 4th Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Standards Activities 6th Semi-Annual Report to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 3rd...

  11. 1st Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Rulemakings - Implementation Report: Energy Conservation Standards Activities 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency Rulemakings -...

  12. Energy-Efficient Appliances: Office of Building Technology, State and Community Programs (BTS) Technology Fact Sheet

    SciTech Connect (OSTI)

    2001-08-01

    Fact sheet for homeowners and contractors that explains the energy savings potential of efficient appliances, how to purchase them, and how to maintain them.

  13. What can we learn from high-frequency appliance-level energy metering? Results from a field experiment

    E-Print Network [OSTI]

    Chen, VL; Delmas, MA; Kaiser, WJ; Locke, SL

    2015-01-01

    to consumers about their energy usage at the appliance levelWeekly summaries of total energy usage and appliance-levelsuch large variations in energy usage were primarily driven

  14. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313

  15. A Communication-Based Appliance Scheduling Scheme for Consumer-Premise Energy Management Systems

    E-Print Network [OSTI]

    Snyder, Larry

    A Communication-Based Appliance Scheduling Scheme for Consumer-Premise Energy Management Systems Scheme for Consumer-Premise Energy Management Systems Chen Chen, K.G. Nagananda, Gang Xiong, Shalinee" appliances which consume power as they desire. An optimization problem is formulated for the energy

  16. Appliance energy efficiency in new home construction. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-11-30

    A survey of 224 builders was conducted to which 160 builders responded. Each respondent completed between one and seven separate questionnaires. Each of the seven questionnaires were designed to collect information about one type of equipment or major appliance. These are: heat pump; heating system; air conditioner; domestic water heater; dishwasher; range; and refrigerator. Analysis of the resulting 406 questionnaires indicated that builders were primarily responsible for brand selection. These choices were made primarily without regard for the energy efficiency of the product. A similar apparent lack of consideration of energy efficiency during brand and model selection was found among home buyers and specialized subcontractors.

  17. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  18. The Demand Reduction Potential of Smart Appliances in U.S. Homes

    SciTech Connect (OSTI)

    Makhmalbaf, Atefe; Srivastava, Viraj; Parker, Graham B.

    2013-08-14

    The widespread deployment of demand respond (DR) enabled home appliances is expected to have significant reduction in the demand of electricity during peak hours. The work documented in this paper focuses on estimating the energy shift resulting from the installation of DR enabled smart appliances in the U.S. This estimation is based on analyzing the market for smart appliances and calculating the total energy demand that can potentially be shifted by DR control in appliances. Appliance operation is examined by considering their sub components individually to identify their energy consumptions and savings resulting from interrupting and shifting their load, e.g., by delaying the refrigerator defrost cycle. In addition to major residential appliances, residential pool pumps are also included in this study given their energy consumption profiles that make them favorable for DR applications. In the market analysis study documented in this paper, the U.S. Energy Information Administration's (EIA) Residential Energy Consumption Survey (RECS) and National Association of Home Builders (NAHB) databases are used to examine the expected life of an appliance, the number of appliances installed in homes constructed in 10 year intervals after 1940 and home owner income. Conclusions about the effectiveness of the smart appliances in reducing electrical demand have been drawn and a ranking of appliances in terms of their contribution to load shift is presented. E.g., it was concluded that DR enabled water heaters result in the maximum load shift; whereas, dishwashers have the highest user elasticity and hence the highest potential for load shifting through DR. This work is part of a larger effort to bring novel home energy management concepts and technologies to reduce energy consumption, reduce peak electricity demand, integrate renewables and storage technology, and change homeowner behavior to manage and consume less energy and potentially save consumer energy costs.

  19. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  20. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A die containing 400 ohmic MEMS switches, as viewed under a microscope, atop a U.S. dime. This device, made with GE's...

  1. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHE

  2. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE

  3. Energy Savings Potential and Research, Development, & Demonstration Opportunities for Commercial Building Appliances

    SciTech Connect (OSTI)

    Zogg, Robert; Goetzler, William; Ahlfeldt, Christopher; Hiraiwa, Hirokazu; Sathe, Amul; Sutherland, Timothy

    2009-12-01

    This study characterizes and assesses the appliances used in commercial buildings. The primary objectives of this study were to document the energy consumed by commercial appliances and identify research, development and demonstration (RD&D) opportunities for efficiency improvements, excluding product categories such as HVAC, building lighting, refrigeration equipment, and distributed generation systems. The study included equipment descriptions, characteristics of the equipment’s market, national energy consumption, estimates of technical potential for energy-saving technologies, and recommendations for U.S. Department of Energy programs that can promote energy savings in commercial appliances.

  4. Issues in federal preemption of state appliance energy efficiency regulations

    SciTech Connect (OSTI)

    Fang, J.M.; Balistocky, S.; Schaefler, A.M.

    1982-12-01

    The findings and conclusions of the analysis of the various issues involved in the federal preemption of state regulations for the DOE no standard rule on covered appliances are summarized. The covered products are: refrigerators, refrigerator-freezers, freezers, clothes dryers, kitchen ranges and ovens, water heaters (excluding heat pump water heaters), room air conditioners, central air conditioners (excluding heat pumps), and furnaces. A detailed discussion of the rationale for the positions of groups offering comment for the record is presneted. The pertinent categories of state and local regulations and programs are explained, then detailed analysis is conducted on the covered products and regulations. Issues relating to the timing of preemption of state regulations are discussed, as well as issues relating to burden of proof, contents of petitions for exemptions from preemption, criteria for evaluating petitions, and procedural and other issues. (LEW)

  5. 0 + 0 = 1 : the appliance model of selling software bundled with hardware

    E-Print Network [OSTI]

    Hein, Bettina

    2007-01-01

    The business model of selling software bundled with hardware is called the appliance model. As hardware becomes less and less expensive and open source software is being offered for free, the traditional business model of ...

  6. Impacts of Imported Liquefied Natural Gas on Residential Appliance Components: Literature Review

    SciTech Connect (OSTI)

    Lekov, Alex; Sturges, Andy; Wong-Parodi, Gabrielle

    2009-12-09

    An increasing share of natural gas supplies distributed to residential appliances in the U.S. may come from liquefied natural gas (LNG) imports. The imported gas will be of a higher Wobbe number than domestic gas, and there is concern that it could produce more pollutant emissions at the point of use. This report will review recently undertaken studies, some of which have observed substantial effects on various appliances when operated on different mixtures of imported LNG. While we will summarize findings of major studies, we will not try to characterize broad effects of LNG, but describe how different components of the appliance itself will be affected by imported LNG. This paper considers how the operation of each major component of the gas appliances may be impacted by a switch to LNG, and how this local impact may affect overall safety, performance and pollutant emissions.

  7. Impacts of Imported Liquefied Natural Gas on Residential Appliance Components: Literature Review

    E-Print Network [OSTI]

    Lekov, Alex

    2010-01-01

    we discuss several types of heat exchangers and the ventingThere are six main types of heat exchangers: (1) individualheat exchangers (found in appliances such as furnaces, boilers, and pool heaters) are variations of the individual section type

  8. U-247: EMC Cloud Tiering Appliance Flaw Lets Remote Users Bypass...

    Broader source: Energy.gov (indexed) [DOE]

    1027448 Bugtraq ID: 55250 EMC.com CVE-2012-2285 IMPACT ASSESSMENT: High Discussion EMC Cloud Tiering Appliance (CTA) is prone to a security-bypass vulnerability that may allow...

  9. Estimation of the Energy and Capacity Savings in Texas from Appliance Efficiency Standards 

    E-Print Network [OSTI]

    Verdict, M.

    1986-01-01

    The purpose of this presentation will be to assess the technical potential for energy and capacity savings in Texas by the year 2006 by the statewide adoption of minimum appliance efficiency standards equivalent to those recently adopted...

  10. Will You Be Purchasing New Appliances for a Rebate from Your...

    Energy Savers [EERE]

    from Your State? December 24, 2009 - 7:30am Addthis This week, you read about Amy's war with her dishwasher and how she plans to take advantage of her state's appliance rebate...

  11. Evaluation of advanced technologies for residential appliances and residential and commercial lighting

    SciTech Connect (OSTI)

    Turiel, I.; Atkinson, B.; Boghosian, S.; Chan, P.; Jennings, J.; Lutz, J.; McMahon, J.; Rosenquist, G.

    1995-01-01

    Section 127 of the Energy Policy Act requires that the Department of Energy (DOE) prepare a report to Congress on the potential for the development and commercialization of appliances that substantially exceed the present federal or state efficiency standards. Candidate high-efficiency appliances must meet several criteria including: the potential exists for substantial improvement (beyond the minimum established in law) of the appliance`s energy efficiency; electric, water, or gas utilities are prepared to support and promote the commercialization of such appliances; manufacturers are unlikely to undertake development and commercialization of such appliances on their own, or development and production would be substantially accelerated by support to manufacturers. This report describes options to improve the efficiency of residential appliances, including water heaters, clothes washers and dryers, refrigerator/freezers, dishwashers, space heating and cooling devices, as well as residential and commercial lighting products. Data from this report (particularly Appendix 1)were used to prepare the report to Congress mentioned previously. For the residential sector, national energy savings are calculated using the LBL Residential Energy Model. This model projects the number of households and appliance saturations over time. First, end-use consumption is calculated for a base case where models that only meet the standard replace existing models as these reach the end of their lifetime. Second, models with efficiencies equal to the technology under consideration replace existing models that reach the end of their lifetime. For the commercial sector, the COMMEND model was utilized to project national energy savings from new technologies. In this report, energy savings are shown for the period 1988 to 2015.

  12. ASKO Appliances: Order (2012-CE-19/2004) | Department of Energy

    Energy Savers [EERE]

    and clothes washers comply with the applicable energy and water conservation standards. DOE assessed a higher civil penalty due to a prior history of the same type of violation....

  13. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  14. WHAT CAN WE LEARN FROM HIGH FREQUENCY APPLIANCE LEVEL ENERGY METERING? RESULTS FROM A FIELD EXPERIMENT

    E-Print Network [OSTI]

    Chen, Victor; Delmas, Magali A; Kaiser, William; Locke, Stephen

    2014-01-01

    the household electricity consumption in the EU, potentialon household electricity consumption: a tool for savinghourly appliance-level electricity consumption data for 124

  15. What can we learn from high-frequency appliance-level energy metering? Results from a field experiment

    E-Print Network [OSTI]

    Chen, VL; Delmas, MA; Kaiser, WJ; Locke, SL

    2015-01-01

    Newborough, M. , 2003. Dynamic energy-consumption indicatorsbehaviour and design. Energy Build. 35 (8), Please cite thisfrequency appliance-level energy metering? Results from a ?

  16. GE Research and Development | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of rare Kaonforsupernovae model (Journal About DOE ButtonFSO HomefeatureGE

  17. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)about aMunich, GermanyAbout GE

  18. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio de Janeiro,theIsGE

  19. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4 GPa of tensile stress to be obtained.

  20. ISSUANCE 2015-10-07: Appliance Standards and Rulemaking Federal Advisory Committee: Notice of Open Meetings Regarding The Dedicated Purpose Pool Pumps Working Group

    Broader source: Energy.gov [DOE]

    Appliance Standards and Rulemaking Federal Advisory Committee: Notice of Open Meetings Regarding The Dedicated Purpose Pool Pumps Working Group

  1. Building Storage Appliances for the Grid and Beyond John Bent, Andrea Arpaci-Dusseau, Remzi Arpaci-Dusseau, Miron Livny

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Building Storage Appliances for the Grid and Beyond John Bent, Andrea Arpaci-Dusseau, Remzi Arpaci,dusseau,remzi,miron@cs.wisc.edu Abstract Current storage appliances have been traditionally de- signed to meet either the storage demands challenges to storage ap- pliances that would be used on the grid. NeST is a user-level software-only storage

  2. Building Storage Appliances for the Grid and Beyond John Bent, Andrea ArpaciDusseau, Remzi ArpaciDusseau, Miron Livny

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Building Storage Appliances for the Grid and Beyond John Bent, Andrea Arpaci­Dusseau, Remzi Arpaci,dusseau,remzi,miron@cs.wisc.edu Abstract Current storage appliances have been traditionally de­ signed to meet either the storage demands challenges to storage ap­ pliances that would be used on the grid. NeST is a user­level software­only storage

  3. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  4. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  5. Reduced-Order Modeling of Aggregated Thermostatic Loads With Demand Response

    E-Print Network [OSTI]

    Zhang, Wei

    Reduced-Order Modeling of Aggregated Thermostatic Loads With Demand Response Wei Zhang, Jianming Lian, Chin-Yao Chang, Karanjit Kalsi and Yannan Sun Abstract-- Demand Response is playing population of appliances under demand response is especially important to evaluate the effec- tiveness

  6. Feasibility of an appliance energy testing and labeling program for Sri Lanka

    SciTech Connect (OSTI)

    Biermayer, Peter; Busch, John; Hakim, Sajid; Turiel, Issac; du Pont, Peter; Stone, Chris

    2000-04-01

    A feasibility study evaluated the costs and benefits of establishing a program for testing, labeling and setting minimum efficiency standards for appliances and lighting in Sri Lanka. The feasibility study included: refrigerators, air-conditioners, flourescent lighting (ballasts & CFls), ceiling fans, motors, and televisions.

  7. Design Techniques for Sensor Appliances: Foundations and Light Compass Case Study

    E-Print Network [OSTI]

    Potkonjak, Miodrag

    sensors of the appliance, and (2) error minimization-based sensor data interpretation middleware. We have University of California, Los Angeles jwong@cs.ucla.edu Seapahn Megerian University of California, Los Angeles seapahn@cs.ucla.edu Miodrag Potkonjak University of California, Los Angeles miodrag

  8. T-531: The WebVPN implementation on Cisco Adaptive Security Appliances (ASA) 5500

    Broader source: Energy.gov [DOE]

    The WebVPN implementation on Cisco Adaptive Security Appliances (ASA) 5500 series devices with software before 8.2(3) permits the viewing of CIFS shares even when CIFS file browsing has been disabled, which allows remote authenticated users to bypass intended access restrictions via CIFS requests, aka Bug ID CSCsz80777.

  9. Load control in low voltage level of the electricity grid using CHP appliances

    E-Print Network [OSTI]

    Hurink, Johann

    as a Virtual Power Plant to the electricity grid. In this work we focus on different algorithms to control is centrally generated in large power plants and in which distribution means distribution from these power.g.c.bosman@utwente.nl Abstract--The introduction of µCHP (Combined Heat and Power) appliances and other means of distributed

  10. Impact of domestic woodburning appliances on indoor air quality Corinne Mandin1

    E-Print Network [OSTI]

    Boyer, Edmond

    air pollution study (CITEPA), France * Corresponding email: Eva.Leoz@ineris.fr SUMMARY Data pollutants in ambient air. Consequently our study aims at describing both emission factors and inerisImpact of domestic woodburning appliances on indoor air quality Corinne Mandin1 , Jacques Ribéron2

  11. Standby and off-mode power demand of new appliances in the Anbal de Almeida

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Standby and off-mode power demand of new appliances in the market Aníbal de Almeida ISR regulation to limit the standby and off-mode power consumption of non-networked household electronic involved in the project. Standby and off-mode values by product categories are analyzed and compared

  12. An Effective Architecture for Automated Appliance Management System Applying Ontology-Based Cloud Discovery

    E-Print Network [OSTI]

    Buyya, Rajkumar

    (SOA) application, while Cloud focuses on Web 2.0 and SOA technology. Although Clouds adopted some Appliances; Semantic Web Service; Web Service Modeling Ontology (WSMO); Service- Level Agreements (SLA); Open technologies. There are already more than twenty definitions for Cloud computing [1]. Among them, Ian Foster

  13. Contactless Sensing of Appliance State Transitions Through Variations in Electromagnetic Fields

    E-Print Network [OSTI]

    Rowe, Anthony

    as to track the associated energy consumption. Our EMF sensors are able to detect significant power state, we present a contactless electromagnetic field (EMF) sensor that can detect appliance power consump transitions. In this paper, we present an inexpensive contactless electromagnetic field (EMF) event

  14. Measure Guideline: Combustion Safety for Natural Draft Appliances Using Indoor Air

    SciTech Connect (OSTI)

    Brand, L.

    2014-04-01

    This measure guideline covers how to assess and carry out the combustion safety procedures for appliances and heating equipment that uses indoor air for combustion in low-rise residential buildings. Only appliances installed in the living space, or in an area freely communicating with the living space, vented alone or in tandem with another appliance are considered here. A separate measure guideline addresses combustion appliances located either within the living space in enclosed closets or side rooms or outside the living space in an adjacent area like an attic or garage that use outdoor air for combustion. This document is for inspectors, auditors, and technicians working in homes where energy upgrades are being conducted whether or not air infiltration control is included in the package of measures being applied. In the indoor combustion air case, guidelines summarized here are based on language provided in several of the codes to establish minimum requirements for the space using simplified prescriptive measures. In addition, building performance testing procedures are provided by testing agencies. The codes in combination with the test procedures offer comprehensive combustion safety coverage to address safety concerns, allowing inexperienced residential energy retrofit inspectors to effectively address combustion safety issues and allow energy retrofits to proceed.

  15. 2014-06-06 Appliance Standards and Rulemaking Federal Advisory Committee; Preliminary Agenda

    Broader source: Energy.gov [DOE]

    This document is a preliminary agenda for the Appliance Standards and Rulemaking Federal Advisory Committee open meeting being held on June 6, 2014 from 1:00 p.m.-5:00 p.m. (EST) at the U.S. Department of Energy, Forrestal Building, Room 8E-089, 1000 Independence Avenue SW., Washington, DC 20585.

  16. Energy and CO2 efficient scheduling of smart appliances in active houses equipped with batteries

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    Energy and CO2 efficient scheduling of smart appliances in active houses equipped with batteries the electricity bill and the CO2 emissions. Mathematically, the scheduling problem is posed as a multi that the new formulation can decrease both the CO2 emissions and the electricity bill. Furthermore, a survey

  17. Energy-Harvesting Thermoelectric Sensing for Unobtrusive Water and Appliance Metering

    E-Print Network [OSTI]

    Cafarella, Michael J.

    Energy-Harvesting Thermoelectric Sensing for Unobtrusive Water and Appliance Metering Bradford that meters using the same thermoelectric generator with which it powers itself. In short, the rate at which be harvested with a thermoelectric generator (TEG) to power a sensor node. TEGs utilize the Seebeck effect

  18. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  19. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  20. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  1. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    control platform which can be used to host intelligent grid management software for microgrids. A typical GE control platform which can be used to host intelligent grid management...

  2. GE Develops High Water Recovery Technology in China | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    purification industry SHANGHAI, September. 17, 2015 - A team of scientists led by the Coating and Membrane Technology Laboratory at GE's China Technology Center have successfully...

  3. Enhanced ferromagnetic order in Sr{sub 4}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} featuring canted [MnO{sub 4}]{sub ?} spin chains of mixed-valent Mn(III)/Mn(IV). Aliovalent substitution of the Sr{sub 4?x}Ln{sub x}Mn{sup III}{sub 2+x}Mn{sup IV}{sub 1?x}O{sub 3}(GeO{sub 4}){sub 3} solid-solution

    SciTech Connect (OSTI)

    West, J. Palmer; Sulejmanovic, Dino; Becht, Gregory; He, Jian; Hitchcock, Dale; Yan, Yonggao; Hwu, Shiou-Jyh

    2013-10-15

    Crystals of Sr{sub 4?x}Ln{sub x}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} (x=0; x?0.15 for Ln=La, Pr, Nd, Sm. Eu, Gd, Dy; x?0.3 for Ln=Gd) were isolated upon using high-temperature, solid-state methods in molten-salt media. These compounds are isostructural with the previously reported Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3} (Ln=La, Sm, Gd) series that contains the same [MnO{sub 4}]{sub ?} spin chains. The synthesis of the Sr{sub 4}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} (x=0) phase was carried out by a double aliovalent substitution with respect to the Sr{sup 2+} and Ge{sup 4+} ions that replace Na{sup +}/Ln{sup 3+} and As{sup 5+} in Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3}, respectively. The title series contains mixed-valent Mn(III)/Mn(IV) and shows a limited range of solid solution, both of which were not observed in the previously reported Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3} series. To form the Sr{sub 4?x}Ln{sub x}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} solid solution, one of the Sr{sup 2+} sites, i.e., the original Ln-site in Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3}, is partially substituted by Ln{sup 3+} in a statistical disorder of Sr{sub 1?x}/Ln{sub x}. Initial magnetic investigations of selected derivatives reveal higher ferromagnetic ordering temperatures than those reported for the Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3} series, presumably attributed to a lesser degree of canting as a result of introducing non-Jahn–Teller Mn{sup 4+} ions. Also intriguing is the observation of multiple anomalies at low temperatures which appear to be of electronic origins. - Graphical abstract: Sr{sub 4?x}Ln{sub x}Mn(III){sub 2+x}Mn(IV){sub 1?x}O{sub 3}(GeO{sub 4}){sub 3}. Display Omitted - Highlights: • Double aliovalent substitution: Sr{sub 4}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} with respect to Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3}. • Solid solution with respect to statistical disorder of Sr{sub 1?x}Ln{sub x} in one of the two Sr sites. • Mn{sup 3+}/Mn{sup 4+} magnetic ions are spatially arranged in a triangular kagomé fashion. • Enhanced ferromagnetic ordering attributed to doping non-Jahn–Teller Mn{sup 4+}.

  4. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and it will become hotter. Move it away (demagnetization) and the food cools down. GE researchers predict the cooling refrigerators could reduce energy consumption by 20%, in...

  5. Flexible Energy | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Opens in new window) Flexible Fuel Solutions Offer Efficient, Reliable Energy The world of power generation is evolving at lightning speed. GE is focused on staying one step...

  6. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 2, Tasks 3-4, Final Online Wind Plants & Frequency Responsive Load Reserves

  7. Effects of rapid thermal annealing on the structural and local atomic properties of ZnO: Ge nanocomposite thin films

    SciTech Connect (OSTI)

    Ceylan, Abdullah Ozcan, Sadan; Rumaiz, Abdul K.; Caliskan, Deniz; Ozbay, Ekmel; Woicik, J. C.

    2015-03-14

    We have investigated the structural and local atomic properties of Ge nanocrystals (Ge-ncs) embedded ZnO (ZnO: Ge) thin films. The films were deposited by sequential sputtering of ZnO and Ge thin film layers on z-cut quartz substrates followed by an ex-situ rapid thermal annealing (RTA) at 600?°C for 30, 60, and 90?s under forming gas atmosphere. Effects of RTA time on the evolution of Ge-ncs were investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), hard x-ray photoelectron spectroscopy (HAXPES), and extended x-ray absorption fine structure (EXAFS). XRD patterns have clearly shown that fcc diamond phase Ge-ncs of sizes ranging between 18 and 27?nm are formed upon RTA and no Ge-oxide peak has been detected. However, cross-section SEM images have clearly revealed that after RTA process, Ge layers form varying size nanoclusters composed of Ge-ncs regions. EXAFS performed at the Ge K-edge to probe the local atomic structure of the Ge-ncs has revealed that as prepared ZnO:Ge possesses Ge-oxide but subsequent RTA leads to crystalline Ge structure without the oxide layer. In order to study the occupied electronic structure, HAXPES has been utilized. The peak separation between the Zn 2p and Ge 3d shows no significant change due to RTA. This implies little change in the valence band offset due to RTA.

  8. GE CRD SERVICE ORDER TERMS AND CONDITIONS (6/00)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming UpgradesArea:Benefits ofofStack Pattern 1:WGE

  9. July 11 Public Meeting: Physical Characterization of Grid-Connected Commercial And Residential Building End-Use Equipment And Appliances

    Broader source: Energy.gov [DOE]

    These documents contain the three slide decks presented at the public meeting on the Physical Characterization of Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances, held on July 11, 2014 in Washington, DC.

  10. NATURAL GAS VARIABILITY IN CALIFORNIA: ENVIRONMENTAL IMPACTS AND DEVICE PERFORMANCE EXPERIMENTAL EVALUATION OF POLLUTANT EMISSIONS FROM RESIDENTIAL APPLIANCES

    E-Print Network [OSTI]

    Singer, Brett C.

    2010-01-01

    of variations in natural gas composition and physical 2.1.2. Fuel Gas Compositions Both domestic natural gas and natural gas appliances vary with (are affected by) variability in fuel  composition 

  11. Use of Residential Smart Appliances for Peak-Load Shifting and Spinning Reserves Cost/Benefit Analysis

    SciTech Connect (OSTI)

    Sastry, Chellury; Pratt, Robert G.; Srivastava, Viraj; Li, Shun

    2010-12-01

    In this report, we present the results of an analytical cost/benefit study of residential smart appliances from a utility/grid perspective in support of a joint stakeholder petition to the ENERGY STAR program within the Environmental Protection Agency (EPA) and Department of Energy (DOE). The goal of the petition is in part to provide appliance manufacturers incentives to hasten the production of smart appliances. The underlying hypothesis is that smart appliances can play a critical role in addressing some of the societal challenges, such as anthropogenic global warming, associated with increased electricity demand, and facilitate increased penetration of renewable sources of power. The appliances we consider include refrigerator/freezers, clothes washers, clothes dryers, room air-conditioners, and dishwashers. The petition requests the recognition that providing an appliance with smart grid capability, i.e., products that meet the definition of a smart appliance, is at least equivalent to a corresponding five percent in operational machine efficiencies. It is then expected that given sufficient incentives and value propositions, and suitable automation capabilities built into smart appliances, residential consumers will be adopting these smart appliances and will be willing participants in addressing the aforementioned societal challenges by more effectively managing their home electricity consumption. The analytical model we utilize in our cost/benefit analysis consists of a set of user-definable assumptions such as the definition of on-peak (hours of day, days of week, months of year), the expected percentage of normal consumer electricity consumption (also referred to as appliance loads) that can shifted from peak hours to off-peak hours, the average power rating of each appliance, etc. Based on these assumptions, we then formulate what the wholesale grid operating-cost savings, or benefits, would be if the smart capabilities of appliances were invoked, and some percentage of appliance loads were shifted away from peak hours to run during off-peak hours, and appliance loads served power-system balancing needs such as spinning reserves that would otherwise have to be provided by generators. The rationale is that appliance loads can be curtailed for about ten minutes or less in response to a grid contingency without any diminution in the quality of service to the consumer. We then estimate the wholesale grid operating-cost savings based on historical wholesale-market clearing prices (location marginal and spinning reserve) from major wholesale power markets in the United States. The savings derived from the smart grid capabilities of an appliance are then compared to the savings derived from a five percent increase in traditional operational machine efficiencies, referred to as cost in this report, to determine whether the savings in grid operating costs (benefits) are at least as high as or higher than the operational machine efficiency credit (cost).

  12. Learning About Power Electronics in the Edison Program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DCDC converters (buck and boost), and the applications of power electronics (wind, solar, appliances, etc.). As an Electrical Engineer, though not one who has focused on...

  13. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  14. Field monitoring of a variable-speed integrated heat pump/water-heating appliance

    SciTech Connect (OSTI)

    Fanney, A.H. [National Inst. of Standards and Technology, Gaithersburg, MD (United States). Building and Fire Research Lab.

    1995-12-31

    A variable-speed integrated heat pump/water-heating appliance was monitored for two years while meeting the space-conditioning and water-heating needs of an occupied residence. Experimental results are presented that show the total energy consumed by the residence was significantly reduced compared to previous years in which electric base-board heat, a wood stove, and window air conditioners were used. During the two space-heating seasons, the variable-speed integrated heat pump/water-heating appliance used 60% less energy than would have been consumed by an electric furnace with the same air distribution system and a storage-type electric water heater. The monthly space-cooling-only coefficients of performance (COP) ranged from 2.50 to 4.03, whereas the monthly space-heating-only coefficients of performance ranged from a low of 0.91 to a high of 3.33. A proposed index to quantify the overall system performance of integrated water-heating/space-conditioning appliances, referred to as the combined performance factor, ranged from 1.55 to 3.50. The majority of larger values occurred during months in which space cooling dominated. The combined performance factor for the entire two-year study was 2.45. A conventional watt-hour meter supplied by the local electrical utility and an electronic digital power analyzer were used to measure the energy consumption of the variable-speed heat pump to discern if variable-speed equipment introduces errors in conventional utility metering equipment. Measurements made using the two instruments were in excellent agreement. The monthly energy consumption and peak electrical demands of the residence, integrated heat pump/water-heating appliance, supplemental space heater, and water heater are discussed. The influence of outdoor temperature on electrical power demand is presented.

  15. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 449# GE 110 Geological Engineering CE 271 GEOE 378 4TH YEAR 3RD YEAR 2ND YEAR 1ST YEAR or PHYS 128

  16. Technology Solutions Case Study: Combustion Safety for Appliances Using Indoor Air

    SciTech Connect (OSTI)

    2014-05-01

    This case study describes how to assess and carry out the combustion safety procedures for appliances and heating equipment that uses indoor air for combustion in low-rise residential buildings. Only appliances installed in the living space, or in an area freely communicating with the living space, vented alone or in tandem with another appliance are considered here. This document is for inspectors, auditors, and technicians working in homes where energy upgrades are being conducted whether or not air infiltration control is included in the package of measures being applied. In the indoor combustion air case, guidelines summarized here are based on language provided in several of the codes to establish minimum requirements for the space using simplified prescriptive measures. In addition, building performance testing procedures are provided by testing agencies. The codes in combination with the test procedures offer comprehensive combustion safety coverage to address safety concerns, allowing inexperienced residential energy retrofit inspectors to effectively address combustion safety issues and allow energy retrofits to proceed.

  17. Miniaturized Turbine Offers Desalination Solution | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    salt from ice New solution draws from the GE Store, integrating GE's experience with steam turbine, oil & gas compressors, 3D printing and water processing NISKAYUNA, NY,...

  18. Energy Frontier Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    include GE Global Research, Yale University-Crabtree Group, Yale University-Batista Group, Stanford University and Lawrence Berkeley National Laboratory. GE Global...

  19. Agenda for Public Meeting on the Physical Characterization of Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    Download the agenda below for the July 11 Public Meeting on the Physical Characterization of Grid-Connected Commercial and  Residential Buildings End-Use Equipment and Appliances.

  20. Edison Summit Brings GE Leaders Together | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    We are ONE Edison Aisha Yousuf 2014.03.21 "We are ONE Edison" was the theme of the first GE Global Edison Summit held February 16-18, 2014 at Coronado Springs Resort in Orlando,...

  1. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  2. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  3. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  4. Impact of Natural Gas Appliances on Pollutant Levels in California Homes

    SciTech Connect (OSTI)

    Mullen, Nasim A.; Li, Jina; Singer, Brett C.

    2012-12-01

    This report presents results from the first year of a 2-year study, investigating associations of five air pollutants (CO, NO2, NOX, formaldehyde and acetaldehyde) with the presence of natural gas appliances in California homes. From November 2011 to March 2012, pollutant concentration and occupant activity data were collected in 155 homes for 6-day periods. The sample population included both single-family (68%) and multi-family (32%) dwellings, with 87% having at least one gas appliance and 77% having an unvented gas cooking appliance. The geometric mean (GM) NO2 levels measured in the kitchen, bedroom and outside of homes were similar at values of 15, 12 and 11 ppb, respectively. In contrast, the GM NOx levels measured in the kitchen and bedroom of homes were much higher than levels measured outdoors, at levels of 42 and 41 ppb, compared to 19 ppb, respectively. Roughly 10% of sampled homes had 6-day average NO2 levels that exceeded the outdoor annual average limit set by the California Ambient Air Quality Standards (CAAQS) (30 ppb). The GMs of the highest 1-h and 8-h CO level measured in homes were 2.5 and 1.1 ppm, respectively. Four homes had a 1-h or 8-h concentration that exceeded the outdoor limits set by the CAAQS. The GM formaldehyde and acetaldehyde concentrations measured in homes were 15 and 7 ppb, respectively. Roughly 95% of homes had average formaldehyde levels indoors that exceeded the Chronic Reference Exposure Level set by the California EPA (7 ppb). Concentrations of NO2 and NOx, and to a lesser extent CO were associated with use of gas appliances, particularly unvented gas cooking appliances. Based on first principles, it is expected that effective venting of cooking pollutant emissions at the source will lead to a reduction of pollutant concentrations. However, no statistical association was detected between kitchen exhaust fan use and pollutant concentrations in homes in this study where gas cooking occurred frequently. The lack of statistical

  5. GE Healthcare Life Sciences

    E-Print Network [OSTI]

    Lebendiker, Mario

    mentioned above. Fig 1. Dismantling the column 1. Remove the top end piece (5) by holding it still and 4. The standard tubing can be slipped through the dismantling the top end piece. Ordering information Thermostat

  6. Presenting a New (and Cool) Appliance Efficiency Standard | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious RankADVANCED MANUFACTURINGEnergy Bills andOrderNATIONAL CHAIRS MEETINGof2015EnergyofEnergy Presenting

  7. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  8. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE

  9. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315

  10. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Predictivity(tm) Industrial Internet Solutions Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new window)...

  11. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  12. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping the contamination of non-specific large vessel signals. Animal studies have used non- conventional functional minimizing the contributions of extravascular BOLD signals around large vessels due to the refocusing pulse

  13. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on-insulator include SIMOX, Ge condensation and wafer bonding. In this paper, a brief introduction of each method

  14. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  15. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  16. Field-induced quantum criticality in YbAgGe

    SciTech Connect (OSTI)

    Bud'ko, S.; Canfield, P.

    2008-01-01

    YbAgGe is one of the very few stoichiometric, Yb-based, heavy fermion materials that exhibit field-induced quantum criticality. We will present an overview of thermodynamic and transport measurements in YbAgGe single crystals. Moderate magnetic field (45-90 kOe, depending on orientation) suppresses long range magnetic order, giving rise to non-Fermi-liquid behavior followed at higher field by a crossover to a heavy Fermi-liquid. Given the more accessible temperature and field scales, a non-Fermi liquid region rather than point for T {yields} 0 K may be detected.

  17. Max Tech and Beyond: Maximizing Appliance and Equipment Efficiency by Design

    SciTech Connect (OSTI)

    Desroches, Louis-Benoit; Garbesi, Karina

    2011-07-20

    It is well established that energy efficiency is most often the lowest cost approach to reducing national energy use and minimizing carbon emissions. National investments in energy efficiency to date have been highly cost-effective. The cumulative impacts (out to 2050) of residential energy efficiency standards are expected to have a benefit-to-cost ratio of 2.71:1. This project examined energy end-uses in the residential, commercial, and in some cases the industrial sectors. The scope is limited to appliances and equipment, and does not include building materials, building envelopes, and system designs. This scope is consistent with the scope of DOE's appliance standards program, although many products considered here are not currently subject to energy efficiency standards. How much energy could the United States save if the most efficient design options currently feasible were adopted universally? What design features could produce those savings? How would the savings from various technologies compare? With an eye toward identifying promising candidates and strategies for potential energy efficiency standards, the Max Tech and Beyond project aims to answer these questions. The analysis attempts to consolidate, in one document, the energy savings potential and design characteristics of best-on-market products, best-engineered products (i.e., hypothetical products produced using best-on-market components and technologies), and emerging technologies in research & development. As defined here, emerging technologies are fundamentally new and are as yet unproven in the market, although laboratory studies and/or emerging niche applications offer persuasive evidence of major energy-savings potential. The term 'max tech' is used to describe both best-engineered and emerging technologies (whichever appears to offer larger savings). Few best-on-market products currently qualify as max tech, since few apply all available best practices and components. The three primary analyses presented in this report are: Nevertheless, it is important to analyze best-on-market products, since data on truly max tech technologies are limited. (1) an analysis of the cross-cutting strategies most promising for reducing appliance and equipment energy use in the U.S.; (2) a macro-analysis of the U.S. energy-saving potential inherent in promising ultra-efficient appliance technologies; and (3) a product-level analysis of the energy-saving potential.

  18. Appliance Upgrades to Consider for Next Tax Season | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum Based Fuels Research at 1 TableC Appendix C Letter from JohnNovemberAppliance

  19. 2nd Semi-Annual Report to Congress on Appliance Energy-Efficiency

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirley Ann JacksonDepartment| Department ofApplianceU.S. Departmentthreethe 8:00AM EDT toRulemakings

  20. 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirley Ann JacksonDepartment| Department ofApplianceU.S. DepartmentthreetheRulemakings -

  1. 4th Semi-Annual Report to Congress on Appliance Energy-Efficiency

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirley Ann JacksonDepartment| Department ofApplianceU.S. DepartmentthreetheRulemakings

  2. Appliances, Lighting, Electronics, and Miscellaneous EquipmentElectricity Use in New Homes

    SciTech Connect (OSTI)

    Brown, Richard E.; Rittelman, William; Parker, Danny; Homan,Gregory

    2007-02-28

    The "Other" end-uses (appliances, lighting, electronics, andmiscellaneous equipment) continue to grow. This is particularly true innew homes, where increasing floor area and amenities are leading tohigher saturation of these types of devices. This paper combines thefindings of several field studies to assess the current state ofknowledge about the "Other" end-uses in new homes. The field studiesinclude sub-metered measurements of occupied houses in Arizona, Florida,and Colorado, as well as device-level surveys and power measurements inunoccupied new homes. We find that appliances, lighting, electronics, andmiscellaneous equipment can consume from 46 percent to 88 percent ofwhole-house electricity use in current low-energy homes. Moreover, theannual consumption for the "Other" end-uses is not significantly lower innew homes (even those designed for low energy use) compared to existinghomes. The device-level surveys show that builder-installed equipment isa significant contributor to annual electricity consumption, and certaindevices that are becoming more common in new homes, such as structuredwiring systems, contribute significantly to this power consumption. Thesefindings suggest that energy consumption by these "Other" end uses isstill too large to allow cost-effective zero-energy homes.

  3. Rebates, loans, and consumers` choice of appliance efficiency level: Combining stated and revealed-preference data

    SciTech Connect (OSTI)

    Train, K.E.; Atherton, T.

    1995-12-31

    Residential customers` choice of efficiency level for appliances, and their participation in demand-side management (DSM) programs, are examined using data on customers` stated preferences in hypothetical (i.e., conjoint-type) situations and their revealed preferences in real-world choices. The analysis provides information on customers` willingness to pay for energy savings, the importance of rebates in customers` decisions, and customers` response to DSM programs that offer loans for purchases of high-efficiency appliances. An estimated model is used to forecast the decisions of customers under: higher rebates, replacement of rebates with finance programs, offering of loans and rebates as alternative options for customers, and the elimination of DSM programs. We find that attractive loans (e.g., low interest rates, loan repayment periods) are necessary to have the same effect as rebates. Programs that offer customers the option of loans or rebates are found to be far more effective than programs that offer only loans or only rebates. 12 refs., 5 figs.

  4. Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS

    E-Print Network [OSTI]

    Fei, Ruixiang; Li, Ju; Yang, Li

    2015-01-01

    We predict enormous piezoelectric effects in intrinsic monolayer group IV monochalcogenides (MX, M=Sn or Ge, X=Se or S), including SnSe, SnS, GeSe and GeS. Using first-principle simulations based on the modern theory of polarization, we find that their characteristic piezoelectric coefficients are about two orders of magnitude larger than those of other 2D materials, such as MoS2 and GaSe, and bulk quartz and AlN which are widely used in industry. This enhancement is a result of the unique "puckered" D2h symmetry and weaker chemical bonds of monolayer group IV monochalcogenides. Given the achieved experimental advances in fabrication of monolayers, their flexible character and ability to withstand enormous strain, these 2D structures with giant piezoelectric effects may be promising for a broad range of applications, such as nano-sized sensors, piezotronics, and energy harvesting in portable electronic devices.

  5. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    ND YEAR 1ST YEAR 3RD YEAR # These courses can be taken in either term.*must meet specific Hum/SocSci@# Bus Sci/HSS#Design Elec.#* T.E.*# T.E.*#GE 449# ME 314 or PHYS 128 or GEOL 121 4TH YEAR 2

  6. GE Energy Management Ancillary Services

    E-Print Network [OSTI]

    GE Energy Management Ancillary Services Definitions and Capability Study Part 1, Tasks 1-2, FinalRose Michael O'Connor Sundar Venkataraman Revision 1 Date: 12/19/2012 #12;Ancillary Services Definitions.................................................................................................................... 7 3.1 Task 1: Identify and define ancillary services needed for integration of new generation

  7. First-order electroweak phase transition in the standard model...

    Office of Scientific and Technical Information (OSTI)

    first-order phase transition to develop even with a Higgs boson mass well above the current direct limit of 114 GeV. The phisup 6 term can be generated for instance by...

  8. A crossover design study to evaluate the effectiveness of appliance inspection and servicing for lowering indoor nitrogen dioxide concentrations

    SciTech Connect (OSTI)

    Colome, S.D. ); Billick, I.H. ); Baker, P.E.; Beals, S.A.; Rubio, S.A.; Cunningham, S.J. ); Wilson, A.L. )

    1988-01-01

    Some researchers have suggested that natural gas appliances are significant contributors to indoor air pollution. Indoor unvented combustion appliances, such as gas-fired ranges, unvented space heaters, and portable kerosene space heaters, have been associated with a wide variety of pollutants, including carbon monoxide (CO), nitric oxide (NO), nitrogen dioxide (NO{sub 2}), sulfur dioxide (SO{sub 2}), formaldehyde (HCHO), and respirable particles. Previous indoor air quality studies have demonstrated that indoor NO{sub 2} concentrations often exceed outdoor ambient levels when gas- burning appliances are used. Cooking with gas has been the focus of many of these studies, although other unvented appliances, such as space-heaters, have also been associated with elevated NO{sub 2} concentrations. Some epidemiologic studies of exposure to NO{sub 2} in homes with gas ranges have indicated a higher prevalence of respiratory symptoms and illness. However, other studies contradicted these findings and failed to show any significant effects associated with gas cooking.

  9. A retrospective investigation of energy efficiency standards: Policies may have accelerated long term declines in appliance costs

    SciTech Connect (OSTI)

    Van Buskirk, R. D.; Kantner, C. L. S.; Gerke, B. F.; Chu, S.

    2014-11-14

    We perform a retrospective investigation of multi-decade trends in price and life-cycle cost (LCC) for home appliances in periods with and without energy efficiency (EE) standards and labeling polices. In contrast to the classical picture of the impact of efficiency standards, the introduction and updating of appliance standards is not associated with a long-term increase in purchase price; rather, quality-adjusted prices undergo a continued or accelerated long-term decline. In addition, long term trends in appliance LCCs—which include operating costs—consistently show an accelerated long term decline with EE policies. We also show that the incremental price of efficiency improvements has declined faster than the baseline product price for selected products. These observations are inconsistent with a view of EE standards that supposes a perfectly competitive market with static supply costs. These results suggest that EE policies may be associated with other forces at play, such as innovation and learning-by-doing in appliance production and design, that can affect long term trends in quality-adjusted prices and LCCs.

  10. 282 IEEE TRANSACTIONS ON SMART GRID, VOL. 5, NO. 1, JANUARY 2014 A Distributed Algorithm of Appliance Scheduling for

    E-Print Network [OSTI]

    Nehorai, Arye

    , Student Member, IEEE, and Arye Nehorai, Fellow, IEEE Abstract--Demand side management encourages the users of Appliance Scheduling for Home Energy Management System Phani Chavali, Student Member, IEEE, Peng Yang. In this paper, we propose a distributed framework for the demand response based on cost minimiza- tion. Each

  11. A retrospective investigation of energy efficiency standards: Policies may have accelerated long term declines in appliance costs

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Van Buskirk, R. D.; Kantner, C. L. S.; Gerke, B. F.; Chu, S.

    2014-11-14

    We perform a retrospective investigation of multi-decade trends in price and life-cycle cost (LCC) for home appliances in periods with and without energy efficiency (EE) standards and labeling polices. In contrast to the classical picture of the impact of efficiency standards, the introduction and updating of appliance standards is not associated with a long-term increase in purchase price; rather, quality-adjusted prices undergo a continued or accelerated long-term decline. In addition, long term trends in appliance LCCs—which include operating costs—consistently show an accelerated long term decline with EE policies. We also show that the incremental price of efficiency improvements has declinedmore »faster than the baseline product price for selected products. These observations are inconsistent with a view of EE standards that supposes a perfectly competitive market with static supply costs. These results suggest that EE policies may be associated with other forces at play, such as innovation and learning-by-doing in appliance production and design, that can affect long term trends in quality-adjusted prices and LCCs.« less

  12. APPLIANCE STANDARDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Equipment General Service Incandescent Lamps General Service Fluorescent Lamps Small Electric Motors Electric Motors Water Heaters Furnace Fans Distribution Transformers Water...

  13. APPLIANCE STANDARDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach HomeA Better Anode Design to Improve4AJ01) (See Energy Level79AJ01)19^560AMERICA'S,A DISTRIBUTION

  14. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  15. Energy-efficiency labels and standards: A guidebook for appliances, equipment and lighting

    SciTech Connect (OSTI)

    McMahon, James E.; Wiel, Stephen

    2001-02-16

    Energy-performance improvements in consumer products are an essential element in any government's portfolio of energy-efficiency and climate change mitigation programs. Governments need to develop balanced programs, both voluntary and regulatory, that remove cost-ineffective, energy-wasting products from the marketplace and stimulate the development of cost-effective, energy-efficient technology. Energy-efficiency labels and standards for appliances, equipment, and lighting products deserve to be among the first policy tools considered by a country's energy policy makers. The U.S. Agency for International Development (USAID) and the United Nations Foundation (UNF) recognize the need to support policy makers in their efforts to implement energy-efficiency standards and labeling programs and have developed this guidebook, together with the Collaborative Labeling and Appliance Standards Program (CLASP), as a primary reference. This guidebook was prepared over the course of the past year with significant contribution from the authors and reviewers mentioned previously. Their diligent participation has made this the international guidance tool it was intended to be. The lead authors would also like to thank the following individuals for their support in the development, production, and distribution of the guidebook: Marcy Beck, Elisa Derby, Diana Dhunke, Ted Gartner, and Julie Osborn of Lawrence Berkeley National Laboratory as well as Anthony Ma of Bevilacqua-Knight, Inc. This guidebook is designed as a manual for government officials and others around the world responsible for developing, implementing, enforcing, monitoring, and maintaining labeling and standards-setting programs. It discusses the pros and cons of adopting energy-efficiency labels and standards and describes the data, facilities, and institutional and human resources needed for these programs. It provides guidance on the design, development, implementation, maintenance, and evaluation of the programs and on the design of the labels and standards themselves. In addition, it directs the reader to references and other resources likely to be useful in conducting the activities described and includes a chapter on energy policies and programs that complement appliance efficiency labels and standards. This guidebook attempts to reflect the essential framework of labeling and standards programs. It is the intent of the authors and sponsors to distribute copies of this book worldwide at no charge for the general public benefit. The guidebook is also available on the web at www.CLASPonline.org and can be downloaded to be used intact or piecemeal for whatever beneficial purposes readers may conceive.

  16. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  17. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  18. The reliability studies of nano-engineered SiGe HBTs using Pelletron accelerator

    SciTech Connect (OSTI)

    Prakash, A. P. Gnana Praveen, K. C.; Pushpa, N.; Cressler, John D.

    2015-05-15

    The effects of high energy ions on the electrical characteristics of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were studied in the total dose of ranging from 600 krad to 100 Mrad (Si). The two generations (50 GHz and 200 GHz) of SiGe HBTs were exposed to 50 MeV lithium, 75 MeV boron and 100 MeV oxygen ions. The electrical characteristics of SiGe HBTs were studied before and after irradiation. The SiGe HBTs were exposed to {sup 60}Co gamma radiation in the same total dose. The results are systematically compared in order to understand the interaction of ions and ionizing radiation with SiGe HBTs.

  19. Xergy Ships First Breakthrough Water Heater Compressor to GE

    Office of Energy Efficiency and Renewable Energy (EERE)

    New HVAC, water heating, and appliance technologies that work without conventional refrigerants are critical for the U.S. Department of Energy (DOE) to reach its long-term goal of cutting building...

  20. Field monitoring of a variable-speed integrated heat pump/water heating appliance

    SciTech Connect (OSTI)

    Fanney, A.H.

    1993-06-01

    The report describes the residence, heat pump system, and monitoring equipment. Results are presented which include comparison of the total electrical energy consumption of the residence prior to and after installation of the heat pump system, the portion of energy used by each end use within the residence, a comparison of the heat pump's energy consumption using a conventional watthour meter and an electronic digital power analyzer, and the hourly electrical demands imposed on the utility. The thermal performance of the heat pump system is reported on a monthly, seasonal, and annual basis using conventional performance indicators in addition to using an index, proposed by NIST, which quantifies the overall system performance of integrated appliances.

  1. Evaluation of Waste Heat Recovery and Utilization from Residential Appliances and Fixtures

    SciTech Connect (OSTI)

    Tomlinson, John J; Christian, Jeff; Gehl, Anthony C

    2012-09-01

    Executive Summary In every home irrespective of its size, location, age, or efficiency, heat in the form of drainwater or dryer exhaust is wasted. Although from a waste stream, this energy has the potential for being captured, possibly stored, and then reused for preheating hot water or air thereby saving operating costs to the homeowner. In applications such as a shower and possibly a dryer, waste heat is produced at the same time as energy is used, so that a heat exchanger to capture the waste energy and return it to the supply is all that is needed. In other applications such as capturing the energy in drainwater from a tub, dishwasher, or washing machine, the availability of waste heat might not coincide with an immediate use for energy, and consequently a heat exchanger system with heat storage capacity (i.e. a regenerator) would be necessary. This study describes a two-house experimental evaluation of a system designed to capture waste heat from the shower, dishwasher clothes washer and dryer, and to use this waste heat to offset some of the hot water energy needs of the house. Although each house was unoccupied, they were fitted with equipment that would completely simulate the heat loads and behavior of human occupants including operating the appliances and fixtures on a demand schedule identical to Building American protocol (Hendron, 2009). The heat recovery system combined (1) a gravity-film heat exchanger (GFX) installed in a vertical section of drainline, (2) a heat exchanger for capturing dryer exhaust heat, (3) a preheat tank for storing the captured heat, and (4) a small recirculation pump and controls, so that the system could be operated anytime that waste heat from the shower, dishwasher, clothes washer and dryer, and in any combination was produced. The study found capturing energy from the dishwasher and clothes washer to be a challenge since those two appliances dump waste water over a short time interval. Controls based on the status of the dump valve on these two appliances would have eliminated uncertainty in knowing when waste water was flowing and the recovery system operated. The study also suggested that capture of dryer exhaust heat to heat incoming air to the dryer should be examined as an alternative to using drying exhaust energy for water heating. The study found that over a 6-week test period, the system in each house was able to recover on average approximately 3000 W-h of waste heat daily from these appliance and showers with slightly less on simulated weekdays and slightly more on simulated weekends which were heavy wash/dry days. Most of these energy savings were due to the shower/GFX operation, and the least savings were for the dishwasher/GFX operation. Overall, the value of the 3000 W-h of displaced energy would have been $0.27/day based on an electricity price of $.09/kWh. Although small for today s convention house, these savings are significant for a home designed to approach maximum affordable efficiency where daily operating costs for the whole house are less than a dollar per day. In 2010 the actual measured cost of energy in one of the simulated occupancy houses which waste heat recovery testing was undertaken was $0.77/day.

  2. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    Engineering * must meet specific requirements # These courses can be taken in either term. 2ND YEAR 3RD YEAR 4 431 Last editted Apr 4, 2006 ^offered in alternate years; take in either 3rd or 4th year CHEM 242TH YEAR 1ST YEAR CHE 422 CHE 232 HSS@# 2005-2006 or PHYS 128 or GEOL 121 or AB E 312 GE 300# CHE 332

  3. 2014-04-30 Public Meeting Agenda: Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    This document is the agenda for the Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances public meeting being held on April 30, 2014.

  4. 2014-04-30 Public Meeting Presentation Slides: Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    These documents contain slide decks presented at the Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances public meeting held on April 30, 2014.

  5. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212 can be taken in either term. GE 124 MATH 110 MATH 124CHEM 115 PHYS 155 3RD YEAR GE 125 GE 110 COMM 102

  6. Purdue, GE Collaborate On Advanced Manufacturing | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeedingProgramExemptionsProteinTotal natural gasPurchase, Delivery,Purdue, GE to

  7. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act Recovery ActARM OverviewAbout GE Global Research

  8. GE Scientists Experiment With Texas BBQ | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverse (Journal Article)Forthcoming UpgradesArea:Benefits ofofStackOn thePower ofGE

  9. Early diagenesis of germanium in sediments of the Antarctic South Atlantic: In search of the missing Ge sink

    SciTech Connect (OSTI)

    King, S.L.; Froelich, P.N.; Jahnke, R.A.

    2000-04-01

    Pore water and solid-phase geochemistry profiles were obtained from several cores between 41{degree}S and 53{degree}S in the Atlantic sector of the Southern Ocean. Pore water nitrate, manganese, and iron profiles delineate standard redox zones in these sediments, and help characterize those with classic vs. burn-down behaviors. Pore water Si and Ge profiles demonstrate that Ge released during opal dissolution is removed pervasively throughout the uppermost interval of silicate release, and also downwards into the suboxic zone by as yet unidentified precipitation mechanisms. These results indicate that early diagenesis of Ge is uncoupled from that of opal. Solid-phase extractions (Fe, Mn, U, Mo, Ge, Cu, Ni, Co, V, and Cd) in a few cores suggest that anthigenic Ge removal in the suboxic zone is not associated with peaks in authigenic Mn cycling (MnO{sub 2} and related metals) but rather with processes deeper in the sediments, perhaps Fe or U diagenesis. Below the interval of Ge removal, pre water Ge increases linearly with depth by over two orders of magnitude, indicating a deep (below recovery) source of large magnitude. The fraction of opal-derived Ge precipitated authigenically in these sediments ranges from {approximately}1 to 96% and correlates strongly with the detrital fraction as well as the detrital to opal ratio, both of which generally decrease from north to south. The Ge sink observed in these sediments would need to be globally representative to account for the entire missing Ge sink in today's oceanic Ge balance, which seems unlikely. Benthic fluxes of Ge and Si estimated from these pore water profiles and from measurements in three benthic flux chamber experiments at high carbon-rain continental margin sites demonstrate that the Ge/Si rate released from the seafloor in locations with high benthic silicate and carbon fluxes is congruent with Holocene opal dissolution (Ge/Si {approximately} 0.7 x 10{sup {minus}6}). In contrast, Ge/Si flux ratios in areas with low silicate fluxes are Ge-depleted (Ge/Si < 0.5 x 10{sup {minus}6}). The authors speculate that glacial-interglacial changes in oceanic Ge/Si as recorded in diatoms may be due in part to variations in this authigenic Ge sink, perhaps related to shifts in siliceous productivity from open ocean (Antarctic) siliceous oozes during interglacials to areas of higher detrital input (Sub Antarctic, continental margins) and possibly also to generally more reducing conditions in sediments during glacials.

  10. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  11. Powering a Home with Just 25 Watts of Solar PV. Super-Efficient Appliances Can Enable Expanded Off-Grid Energy Service Using Small Solar Power Systems

    SciTech Connect (OSTI)

    Phadke, Amol A.; Jacobson, Arne; Park, Won Young; Lee, Ga Rick; Alstone, Peter; Khare, Amit

    2015-04-01

    Highly efficient direct current (DC) appliances have the potential to dramatically increase the affordability of off-grid solar power systems used for rural electrification in developing countries by reducing the size of the systems required. For example, the combined power requirement of a highly efficient color TV, four DC light emitting diode (LED) lamps, a mobile phone charger, and a radio is approximately 18 watts and can be supported by a small solar power system (at 27 watts peak, Wp). Price declines and efficiency advances in LED technology are already enabling rapidly increased use of small off-grid lighting systems in Africa and Asia. Similar progress is also possible for larger household-scale solar home systems that power appliances such as lights, TVs, fans, radios, and mobile phones. When super-efficient appliances are used, the total cost of solar home systems and their associated appliances can be reduced by as much as 50%. The results vary according to the appliances used with the system. These findings have critical relevance for efforts to provide modern energy services to the 1.2 billion people worldwide without access to the electrical grid and one billion more with unreliable access. However, policy and market support are needed to realize rapid adoption of super-efficient appliances.

  12. Ex Parte Memo_September 26, 2013_RF TP Icemaker Comments (00031507...

    Energy Savers [EERE]

    Laura Barhydt, DOE John Cymbalsky, DOE Michael Kido, DOE Tim Sutherland, Navigant Bill Brown, GE Appliances and Lighting Andrew Krause, GE Appliances and Lighting Travis Perkins,...

  13. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclear SecurityChattanChemistry ofNanChevron, GE form

  14. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room News Publications Traditional Knowledge KiosksAboutHelp & Reference Users AdvAncedGE

  15. Analysis of Potential Energy Saving and CO2 Emission Reduction of Home Appliances and Commercial Equipments in China

    SciTech Connect (OSTI)

    Zhou, Nan; Fridley, David; McNeill, Michael; Zheng, Nina; Letschert, Virginie; Ke, Jing; Saheb, Yamina

    2010-06-07

    China is now the world's largest producer and consumer of household appliances and commercial equipment. To address the growth of electricity use of the appliances, China has implemented a series of minimum energy performance standards (MEPS) for 30 appliances, and voluntary energy efficiency label for 40 products. Further, in 2005, China started a mandatory energy information label that covers 19 products to date. However, the impact of these standard and labeling programs and their savings potential has not been evaluated on a consistent basis. This research involved modeling to estimate the energy saving and CO{sub 2} emission reduction potential of the appliances standard and labeling program for products for which standards are currently in place, or under development and those proposed for development in 2010. Two scenarios that have been developed differ primarily in the pace and stringency of MEPS development. The 'Continued Improvement Scenario' (CIS) reflects the likely pace of post-2009 MEPS revisions, and the likely improvement at each revision step considering the technical limitation of the technology. The 'Best Practice Scenario' (BPS) examined the potential of an achievement of international best practice MEPS in 2014. This paper concludes that under the 'CIS' of regularly scheduled MEPS revisions to 2030, cumulative electricity consumption could be reduced by 9503 TWh, and annual CO{sub 2} emissions would be 16% lower than in the frozen efficiency scenario. Under a 'BPS' scenario for a subset of products, cumulative electricity savings would be 5450 TWh and annual CO{sub 2} emissions reduction would be 35% lower than in the frozen scenario.

  16. Analysis of Potential Energy Saving and CO2 Emission Reduction of Home Appliances and Commercial Equipments in China

    SciTech Connect (OSTI)

    Zhou, Nan; Fridley, David; McNeil, Michael; Zheng, Nina; Letschert, Virginie; Ke, Jing

    2011-04-01

    China has implemented a series of minimum energy performance standards (MEPS) for over 30 appliances, voluntary energy efficiency label for 40 products and a mandatory energy information label that covers 19 products to date. However, the impact of these programs and their savings potential has not been evaluated on a consistent basis. This paper uses modeling to estimate the energy saving and CO{sub 2} emission reduction potential of the appliances standard and labeling program for products for which standards are currently in place, under development or those proposed for development in 2010 under three scenarios that differ in the pace and stringency of MEPS development. In addition to a baseline 'Frozen Efficiency' scenario at 2009 MEPS level, the 'Continued Improvement Scenario' (CIS) reflects the likely pace of post-2009 MEPS revisions, and the likely improvement at each revision step. The 'Best Practice Scenario' (BPS) examined the potential of an achievement of international best practice efficiency in broad commercial use today in 2014. This paper concludes that under 'CIS', cumulative electricity consumption could be reduced by 9503 TWh, and annual CO{sub 2} emissions of energy used for all 37 products would be 16% lower than in the frozen efficiency scenario. Under a 'BPS' scenario for a subset of products, cumulative electricity savings would be 5450 TWh and annual CO{sub 2} emissions reduction of energy used for 11 appliances would be 35% lower.

  17. NATURAL GAS VARIABILITY IN CALIFORNIA: ENVIRONMENTAL IMPACTS AND DEVICE PERFORMANCE EXPERIMENTAL EVALUATION OF POLLUTANT EMISSIONS FROM RESIDENTIAL APPLIANCES

    SciTech Connect (OSTI)

    Singer, Brett C.; Apte, Michael G.; Black, Douglas R.; Hotchi, Toshifumi; Lucas, Donald; Lunden, Melissa M.; Mirer, Anna G.; Spears, Michael; Sullivan, Douglas P.

    2009-12-01

    The effect of liquefied natural gas on pollutant emissions was evaluated experimentally with used and new appliances in the laboratory and with appliances installed in residences, targeting information gaps from previous studies. Burner selection targeted available technologies that are projected to comprise the majority of installed appliances over the next decade. Experiments were conducted on 13 cooktop sets, 12 ovens, 5 broiler burners, 5 storage water heaters, 4 forced air furnaces, 1 wall furnace, and 6 tankless water heaters. Air-free concentrations and fuel-based emission factors were determined for carbon monoxide, nitrogen oxides, nitrogen dioxide, and the number of (predominantly ultrafine) particles over complete burns?including transient effects (device warm-up and intermittent firing of burners) following ignition--and during more stable end-of-burn conditions. Formaldehyde was measured over multi-burn cycles. The baseline fuel was Northern California line gas with Wobbe number (a measure of fuel energy delivery rate) of 1320-1340; test fuels had Wobbe numbers of roughly 1390 and 1420, and in some cases 1360. No ignition or operational problems were observed during test fuel use. Baseline emissions varied widely across and within burner groups and with burner operational mode. Statistically significant emissions changes were observed for some pollutants on some burners.

  18. GE Global Research in San Ramon, California

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Careers Leadership Programs What's new in San Ramon Ars Technica: Analyzing the Internet of Things GE Unveils High-Speed Network Infrastructure to Connect Machines, Data...

  19. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  20. Advanced Lighting Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act RecoveryTechnologies |Appliances & Lighting

  1. Advanced Water Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory of raregovAboutRecovery Act RecoveryTechnologies |AppliancesWater We're

  2. Massive "spin-2" theories in arbitrary $D \\ge 3$ dimensions

    E-Print Network [OSTI]

    D. Dalmazi; A. L. R. dos Santos; E. L. Mendonça

    2014-08-28

    Here we show that in arbitrary dimensions $D\\ge 3$ there are two families of second order Lagrangians describing massive "spin-2" particles via a nonsymmetric rank-2 tensor. They differ from the usual Fierz-Pauli theory in general. At zero mass one of the families is Weyl invariant. Such massless theory has no particle content in $D=3$ and gives rise, via master action, to a dual higher order (in derivatives) description of massive spin-2 particles in $D=3$ where both the second and the fourth order terms are Weyl invariant, contrary to the linearized New Massive Gravity. However, only the fourth order term is invariant under arbitrary antisymmetric shifts. Consequently, the antisymmetric part of the tensor $e_{[\\mu\

  3. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M.; Buljan, M.; Chahboun, A.; Roldan, M. A.; Molina, S. I.; Bernstorff, S.; Varela, M.; Pennycook, S. J.; Barradas, N. P.; Alves, E.

    2012-04-01

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  4. Impacts of China's Current Appliance Standards and LabelingProgram to 2020

    SciTech Connect (OSTI)

    Fridley, David; Aden, Nathaniel; Zhou, Nan; Lin, Jiang

    2007-03-03

    The report summarizes the history and nature of China sstandardsand labeling program in the Introduction in Section 1. Trends indomestic production, exports, penetration rates, unit energy consumptionand the history of S&L technical levels by product are discussed ingreat detail in Section 2. The national energy impactsanalysis found inSection 3 concludes that overall China s standards and labeling programsreduce total electricity consumption in 2020 by an annual 106 TWh, or 16percent of what would otherwise been expected in that year in the absenceof standards and labeling programs.In total, the report concludes thatthe S&L programs currently in place in China are expected to save acumulative 1143 TWh by 2020, or 9 percent of the cumulative consumptionof residential electricity to that year. In 2020 alone, annual savingsare expected to be equivalent to 11 percent of residential electricityuse. In average generation terms, this is equivalent to 27 1-GW coalfired plants that would have required around 75 million tonnes of coal tooperate.In comparison, savings from the US appliance standards programalone is expected to save 10 percent of residential electricityconsumption in 2020.

  5. GE Turbine Parts www.edisonmachine.com

    E-Print Network [OSTI]

    Chiao, Jung-Chih

    GE Turbine Parts www.edisonmachine.com New authentic GE and Westinghouse Turbine Parts Muscle cars vehicle: Has the code for a hydrogen car been cracked? World-first working eukaryotic cell mad from's smallest windmills to power cell phones 1/17/2014http://www.gizmag.com/worlds-smallest-windmill-energy

  6. Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Luong, T. K. P.; Dau, M. T.; Zrir, M. A.; Le Thanh, V.; Petit, M. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France)] [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Stoffel, M.; Rinnert, H. [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)] [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Ghrib, A.; El Kurdi, M.; Boucaud, P. [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France)] [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France); Murota, J. [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)] [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2013-08-28

    Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

  7. Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism

    SciTech Connect (OSTI)

    Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

    2013-02-21

    Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

  8. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  9. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  10. Xergy Ships First Breakthrough Water Heater Compressor to GE...

    Energy Savers [EERE]

    Xergy Ships First Breakthrough Water Heater Compressor to GE Xergy Ships First Breakthrough Water Heater Compressor to GE September 15, 2015 - 3:41pm Addthis Xergy Inc. and GE...

  11. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    who want to learn more about GE and its global Research Centers. For this purpose, the Aero & Thermal Systems groups of GE Global Research and representatives from several GE...

  12. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (<1x109cm-2) and point defects Ge ...

  13. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  14. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  15. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Try watching this video on www.youtube.com, or enable...

  16. Work & Life at San Ramon | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    new window) Click to share on Tumblr (Opens in new window) Employee Organizations GE Software Women's Network TBD Celebrations GE Software Technology Conference This event allows...

  17. Rocket Science? No, It's Harder | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    says Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research Europe. Juan Albeniz, Business Program Manager, Oil & Gas at GE Global Research, Europe Juan...

  18. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  19. A Global Review of Incentive Programs to Accelerate Energy-Efficient Appliances and Equipment

    SciTech Connect (OSTI)

    de la Rue du Can, Stephane; Phadke, Amol; Leventis, Greg; Gopal, Anand

    2013-08-01

    Incentive programs are an essential policy tool to move the market toward energy-efficient products. They offer a favorable complement to mandatory standards and labeling policies by accelerating the market penetration of energy-efficient products above equipment standard requirements and by preparing the market for increased future mandatory requirements. They sway purchase decisions and in some cases production decisions and retail stocking decisions toward energy-efficient products. Incentive programs are structured according to their regulatory environment, the way they are financed, by how the incentive is targeted, and by who administers them. This report categorizes the main elements of incentive programs, using case studies from the Major Economies Forum to illustrate their characteristics. To inform future policy and program design, it seeks to recognize design advantages and disadvantages through a qualitative overview of the variety of programs in use around the globe. Examples range from rebate programs administered by utilities under an Energy-Efficiency Resource Standards (EERS) regulatory framework (California, USA) to the distribution of Eco-Points that reward customers for buying efficient appliances under a government recovery program (Japan). We found that evaluations have demonstrated that financial incentives programs have greater impact when they target highly efficient technologies that have a small market share. We also found that the benefits and drawbacks of different program design aspects depend on the market barriers addressed, the target equipment, and the local market context and that no program design surpasses the others. The key to successful program design and implementation is a thorough understanding of the market and effective identification of the most important local factors hindering the penetration of energy-efficient technologies.

  20. Max Tech Appliance Design: Potential for Maximizing U.S. Energy Savings through Standards

    SciTech Connect (OSTI)

    Garbesi, Karina; Desroches, Louis-Benoit; Bolduc, Christopher; Burch, Gabriel; Hosseinzadeh, Griffin; Saltiel, Seth

    2011-05-06

    This study surveyed the technical potential for efficiency improvements in 150 categories of appliances and equipment representing 33 quads of primary energy use across the US economy in 2010 and (1) documented efficient product designs, (2) identified the most promising cross-cutting strategies, and (3) ranked national energy savings potential by end use. Savings were estimated using a method modeled after US Department of Energy priority-setting reports - simplified versions of the full technical and economic analyses performed for rulemakings. This study demonstrates that large savings are possible by replacing products at the end-of-life with ultra-efficient models that use existing technology. Replacing the 50 top energy-saving end-uses (constituting 30 quads of primary energy consumption in 2010) with today's best-on-market equivalents would save {approx}200 quads of US primary energy over 30 years (25% of consumption anticipated there from). For the 29 products for maximum feasible savings potential could be estimated, the savings were twice as high. These results demonstrate that pushing ultra-efficient products to market could significantly escalate carbon emission reductions and is a viable strategy for sustaining large emissions reductions through standards. The results of this analysis were used by DOE for new coverage prioritization, to identify key opportunities for product prototyping and market development, and will leverage future standards rulemakings by identifying the full scope of maximum feasible technology options. High leverage products include advances lighting systems, HVAC, and televisions. High leverage technologies include electronic lighting, heat pumps, variable speed motors, and a host of controls-related technologies.

  1. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  2. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  3. Household`s choices of efficiency levels for appliances: Using stated- and revealed-preference data to identify the importance of rebates and financing arrangements

    SciTech Connect (OSTI)

    Train, K.; Atherton, T.

    1994-11-01

    We examine customers` choice between standard and high-efficiency equipment, and the impact of utility incentives such as rebates and loans on this decision. Using data from interviews with 400 households, we identify the factors that customers consider in their choice of efficiency level for appliances and the relative importance of these factors. We build a model that describes customers` choices and can be used to predict choices in future situations under changes in the attributes of appliances and in the utility`s DSM and as part of the appliance-choice component of utilities` end-use forecasting systems. As examples, the model is used to predict the impacts of: doubling the size of rebates, replacing rebates with financing programs, and offering loans and rebates as alternative options for customers.

  4. Researching NDE, Additive Manufacturing |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    I never thought I would get the incredible opportunity to become a summer intern at the GE Global Research Center, amongst such brilliant and tenacious individuals. I have been...

  5. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in Niskayuna, NY, Christine is responsible for working with both R&D leaders at GE's industrial businesses and with strategic partners to set strategy for growth, and to...

  6. GE Announces Vic Abate as New Chief Technology Officer | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Industrial Internet and Brilliant Factory. This transition marks another chapter in GE's transformation to become the world's premiere Digital Industrial company. Enabled by a...

  7. Magnetic structure at low temperatures in FeGe{sub 2}

    SciTech Connect (OSTI)

    Babu, P. D.; Mishra, P. K.; Dube, V.; Ravikumar, G.; Mishra, R.; Sastry, P. U.

    2014-04-24

    Magnetic phase of FeGe{sub 2} intermetallic is studied using low-temperature neutron diffraction and DC magnetization. Zero-magnetic-field neutron scattering data shows the presence of an antiferromagnetic phase in the low temperature range. We find the evidence of the presence of a ferromagnetic order overriding on the predominantly antiferromagnetic phase at low temperatures.

  8. $?_{DIS}(?N)$, NLO Perturbative QCD and O(1 GeV) Mass Corrections

    E-Print Network [OSTI]

    S. Kretzer; M. H. Reno

    2004-10-13

    The deep-inelastic neutrino-nucleon cross section is one of the components of few GeV neutrino interactions. We present here our results for neutrino-isoscalar nucleon charged current scattering including perturbative next-to-leading order QCD corrections, target mass corrections, charm mass and lepton mass corrections.

  9. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  10. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  11. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  12. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  13. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  14. Understanding order flow

    E-Print Network [OSTI]

    Evans, MDD; Lyons, Richard K.

    2006-01-01

    Understanding Order Flow October 2005 Martin D. D. Evans 1Rate Fundamentals and Order Flow, typescript, Georgetown2005), Customer Order Flow and Exchange Rate Movements: Is

  15. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  16. Search for neutrinoless double-beta decay of Ge-76 with GERDA

    E-Print Network [OSTI]

    Karl-Tasso Knoepfle

    2008-10-17

    GERDA, the GERmanium Detector Array experiment, is a new double beta-decay experiment which is currently under construction in the INFN National Gran Sasso Laboratory (LNGS), Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of GERDA is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments. The paper discusses motivation, physics reach, design and status of construction of GERDA, and presents some R&D results.

  17. Higgs portal, fermionic dark matter, and a Standard Model like Higgs at 125 GeV

    E-Print Network [OSTI]

    Laura Lopez-Honorez; Thomas Schwetz; Jure Zupan

    2012-07-09

    We show that fermionic dark matter (DM) which communicates with the Standard Model (SM) via the Higgs portal is a viable scenario, even if a SM-like Higgs is found at around 125 GeV. Using effective field theory we show that for DM with a mass in the range from about 60 GeV to 2 TeV the Higgs portal needs to be parity violating in order to be in agreement with direct detection searches. For parity conserving interactions we identify two distinct options that remain viable: a resonant Higgs portal, and an indirect Higgs portal. We illustrate both possibilities using a simple renormalizable toy model.

  18. Synthesis, structural characterization and magnetic properties of RE{sub 2}MgGe{sub 2} (RE=rare-earth metal)

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Tobash, Paul H. [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States)

    2011-11-15

    A series of rare-earth metal-magnesium-germanides RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) has been synthesized by reactions of the corresponding elements at high temperature. Their structures have been established by single-crystal and powder X-ray diffraction and belong to the Mo{sub 2}FeB{sub 2} structure type (space group P4/mbm (No. 127), Z=2; Pearson symbol tP10). Temperature dependent DC magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime for all members of the family, excluding Y{sub 2}MgGe{sub 2}, Sm{sub 2}MgGe{sub 2}, and Lu{sub 2}MgGe{sub 2}. At cryogenic temperatures (ca. 60 K and below), most RE{sub 2}MgGe{sub 2} phases enter into an antiferromagnetic ground-state, except for Er{sub 2}MgGe{sub 2} and Tm{sub 2}MgGe{sub 2}, which do not undergo magnetic ordering down to 5 K. The structural variations as a function of the decreasing size of the rare-earth metals, following the lanthanide contraction, and the changes in the magnetic properties across the series are discussed as well. - Graphical Abstract: The structure of RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) can be best viewed as 2-dimensional slabs of Mg and Ge atoms (anionic sub-lattice), and layers of rare-earth metal atoms (cationic sub-lattice) between them. Within this description, one should consider the Ge-Ge dumbbells (formally Ge{sup 6-}{sub 2}), interconnected with square-planar Mg atom as forming flat [MgGe{sub 2}] layers (z=0), stacked along the c-axis with the layers at z=1/2, made of rare-earth metal cations (formally RE{sup 3+}). Highlights: > RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) are new ternary germanides. > Their structures can be recognized as a 1:1 intergrowth of CsCl- and AlB{sub 2}-like slabs. > Ge atoms are covalently bound into Ge{sub 2} dumbbells. > Most RE{sub 2}MgGe{sub 2} phases are antiferromagnetically ordered at cryogenic temperatures.

  19. QoS-aware Deployment of Network of Virtual Appliances across Multiple Clouds Amir Vahid Dastjerdi, Saurabh Kumar Garg, and Rajkumar Buyya

    E-Print Network [OSTI]

    Buyya, Rajkumar

    , Department of Computer Science and Software Engineering, The University of Melbourne, Parkville, VIC 3010-based. They take into account Quality of Service (QoS) criteria such as reliability, data communication cost problems such as root privilege requirements and library dependencies, virtual appliance technology

  20. Publications Order Form Order by Mail

    E-Print Network [OSTI]

    Brown, Sally

    .S. Pacific Northwest Future Prospects for Western Washington's Timber Supply Forest Fertilization: Sustaining;Shipping Information US Postage: fee is $6.00 per order + $2.00 per book ordered Federal Express: charges vary according to weight and service level. If you wish to have your order shipped using this method

  1. Laser-Plasma Wakefield Acceleration with Higher Order Laser Modes

    E-Print Network [OSTI]

    Geddes, Cameron Guy Robinson

    Laser-Plasma Wakefield Acceleration with Higher Order Laser Modes C.G.R. Geddes , E. Cormier. Nevada, Reno and U.C. Berkeley Abstract. Laser-plasma collider designs point to staging of multiple accelerator stages at the 10 GeV level, which are to be developed on the upcoming BELLA laser, while Thomson

  2. Energy-Efficiency Labels and Standards: A Guidebook forAppliances, Equipment, and Lighting - 2nd Edition

    SciTech Connect (OSTI)

    Wiel, Stephen; McMahon, James E.

    2005-04-28

    Energy-performance improvements in consumer products are an essential element in any government's portfolio of energy-efficiency and climate change mitigation programs. Governments need to develop balanced programs, both voluntary and regulatory, that remove cost-ineffective, energy-wasting products from the marketplace and stimulate the development of cost-effective, energy-efficient technology. Energy-efficiency labels and standards for appliances, equipment, and lighting products deserve to be among the first policy tools considered by a country's energy policy makers. The U.S. Agency for International Development (USAID) and several other organizations identified on the cover of this guidebook recognize the need to support policy makers in their efforts to implement energy-efficiency standards and labeling programs and have developed this guidebook, together with the Collaborative Labeling and Appliance Standards Program (CLASP), as a primary reference. This second edition of the guidebook was prepared over the course of the past year, four years after the preparation of the first edition, with a significant contribution from the authors and reviewers mentioned previously. Their diligent participation helps maintain this book as the international guidance tool it has become. The lead authors would like to thank the members of the Communications Office of the Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory for their support in the development, production, and distribution of the guidebook. This guidebook is designed as a manual for government officials and others around the world responsible for developing, implementing, enforcing, monitoring, and maintaining labeling and standards setting programs. It discusses the pros and cons of adopting energy-efficiency labels and standards and describes the data, facilities, and institutional and human resources needed for these programs. It provides guidance on the design, development, implementation, maintenance, and evaluation of the programs and on the design of the labels and standards themselves. In addition, it directs the reader to references and other resources likely to be useful in conducting the activities described and includes a chapter on energy policies and programs that complement appliance efficiency labels and standards. This guidebook attempts to reflect the essential framework of labeling and standards programs. It is the intent of the authors and sponsor to distribute copies of this book worldwide, at no charge, for the general public benefit. The guidebook is also available on the web at www.clasponline.org and may be downloaded to be used intact or piecemeal for whatever beneficial purposes readers may conceive.

  3. Si/SiGe electron resonant tunneling diodes with graded spacer wells

    SciTech Connect (OSTI)

    Paul, D. J.; See, P.; Bates, R.; Griffin, N.; Coonan, B. P.; Redmond, G.; Crean, G. M.; Zozoulenko, I. V.; Berggren, K.-F.; Hollander, B.

    2001-06-25

    Resonant tunneling diodes have been fabricated using graded Si{sub 1{minus}x}Ge{sub x} (x=0.3{r_arrow}0.0) spacer wells and strained Si{sub 0.4}Ge{sub 0.6} barriers on a relaxed Si{sub 0.7}Ge{sub 0.3} n-type substrate which demonstrates negative differential resistance at up to 100 K. This design is aimed at reducing the voltage at which the peak current density is achieved. Peak current densities of 0.08A/cm{sup 2} with peak-to-valley current ratios of 1.67 have been achieved for a low peak voltage of 40 mV at 77 K. This represents an improvement of over an order of magnitude compared to previous work. {copyright} 2001 American Institute of Physics.

  4. Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

    SciTech Connect (OSTI)

    De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A.; Dalla Palma, M.; Della Mea, G.; Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V.; Lietti, D.; Berra, A.; Guffanti, G.; Prest, M.; Vallazza, E.

    2013-10-21

    Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

  5. Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

    2014-03-21

    Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

  6. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  7. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  8. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  9. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more »the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  10. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi [JLAB] (ORCID:0000000170267841)

    2015-05-01

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  11. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  12. The use of negotiated agreements to improve efficiency of end-use appliances: First results from the European experience

    SciTech Connect (OSTI)

    Bertoldi, P.; Bowie, R.; Hagen, L.

    1998-07-01

    The European Union is pursuing measures to improve end-use equipment efficiency through a variety of policy instruments, in particular for domestic appliances. One of the most effective methods to achieve market transformation is through minimum efficiency performance standards (MEPS). However, after the difficulties and controversy following the adoption of legislation for MEPS for domestic refrigerators/freezers, a new policy instrument, i.e. negotiated agreements by manufacturers, has been investigated and tested for two type of appliances: domestic washing machines and TVs and VCRs. Based on the positive experience of the above two agreements, other products (e.g. dryers, dishwasher, electric water heaters, etc.) will be the subject of future negotiated agreements. Based on the results of the two negotiated agreements, this paper describes the energy efficiency potential, the procedures, and the advantages and disadvantages of negotiated agreements compared to legislated mandatory for MEPS, as developed in the European context. The paper concludes that negotiated agreements are a viable policy option, which allow flexibility in the implementation of the efficiency targets and therefore the adoption of cost-effective solutions for manufacturers. In addition, negotiated agreements can be implemented more quickly compared to mandatory MEPS and they allow a closer monitoring of the results. The main question asked in the paper is whether the negotiated agreements can deliver the results in the long term compared to what could be achieved through legislation. The European experience indicates that this instrument can deliver the results and that it offer a number of advantages compared to MEPS.

  13. Surface structure of the liquid Au[subscript 72]Ge[subscript 28] eutectic phase: X-ray reflectivity

    SciTech Connect (OSTI)

    Pershan, P.S.; Stoltz, S.E.; Mechler, S.; Shpyrko, O.G.; Grigoriev, A.Y.; Balagurusamy, V.S. K.; Lin, B.H.; Meron, M.; (Harvard); (Brown); (UCSD); (Tulsa); (UC)

    2009-12-01

    The surface structure of the liquid phase of the Au{sub 72}Ge{sub 28} eutectic alloy has been measured using resonant and nonresonant x-ray reflectivity and grazing incidence x-ray diffraction. In spite of the significant differences in the surface tension of liquid Ge and Au the Gibbs adsorption enhancement of Ge concentration at the surface is minimal. This is in striking contrast to all the other binary alloys with large differences in the respective surface tensions measured up to date. In addition there is no evidence of the anomalous strong surface layering or in-plane crystalline order that has been reported for the otherwise quite similar liquid Au{sub 82}Si{sub 18} eutectic. Instead, the surface of eutectic Au{sub 72}Ge{sub 28} is liquidlike and the layering can be explained by the distorted crystal model with only slight modifications to the first layer.

  14. Phase transitions in Ge-Sb phase change materials

    SciTech Connect (OSTI)

    Raoux, Simone; Virwani, Kumar; Hitzbleck, Martina; Salinga, Martin; Madan, Anita; Pinto, Teresa L.

    2009-03-15

    Thin films of the phase change material Ge-Sb with Ge concentrations between 7.3 and 81.1 at. % were deposited by cosputtering from elemental targets. Their crystallization behavior was studied using time-resolved x-ray diffraction, Auger electron spectroscopy, differential scanning calorimetry, x-ray reflectivity, profilometry, optical reflectivity, and resistivity versus temperature measurements. It was found that the crystallization temperature increases with Ge content. Calculations of the glass transition temperature (which is a lower limit for the crystallization temperature T{sub x}) also show an increase with Ge concentration closely tracking the measured values of T{sub x}. For low Ge content samples, Sb x-ray diffraction peaks occurred during a heating ramp at lower temperature than Ge diffraction peaks. The appearance of Ge peaks is related to Ge precipitation and agglomeration. For Ge concentrations of 59.3 at. % and higher, Sb and Ge peaks occurred at the same temperature. Upon crystallization, film mass density and optical reflectivity increase as well as electrical contrast (ratio of resistivity in amorphous phase to crystalline phase) all showed a maximum for the eutectic alloy (14.5 at. % Ge). For the alloy with 59.3 at. % Ge there was very little change in any of these parameters, while the alloy with 81.1 at. % Ge behaved opposite to a typical phase change alloy and showed reduced mass density and reflectivity and increased resistivity.

  15. Updated 8/28/2014 New GE Requirements & Environmental Studies Advising

    E-Print Network [OSTI]

    Updated 8/28/2014 New GE Requirements & Environmental Studies Advising Course Concentration(s) Lower Division GE Upper Division GE Overlay(s) AIS 310

  16. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic must be supplied (1) to create viscous flow units by breaking bonds between atoms and molecules, and (2

  17. Effects of Ge replacement in GeTe by [Ag+Sb] on thermoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in GeTe by Ag+Sb on thermoelectric properties and NMR spectra Requirements for student: general physics and chemistry courses, and desire to work in experimental laboratory. This...

  18. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    offered 19 programs and counted 375 participants; this year, Girls Who Code will offer 60 programs reaching close to 1,200 girls in nine cities nationwide. GE joins other...

  19. Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab Energy Secretary Chu to Tour GE Global Research Advanced Manufacturing Lab May 24, 2012 - 10:54am Addthis...

  20. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research 2-3-10-v Crowdsourcing...

  1. What Happens in Research-Based Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    paths we have at GE Global Research ("GE Leaders are Researchers Too",). The field of gas turbine heat transfer is growing in importance, and as a result, we have a lot of job...

  2. ISSUANCE 2015-08-19: Appliance Standards and Rulemaking Federal Advisory Committee: Notice of Intent to Establish the Dedicated Purpose Pool Pumps Working Group to Negotiate a Notice of Proposed Rulemaking (NOPR) for Energy Conservation Standards

    Broader source: Energy.gov [DOE]

    Appliance Standards and Rulemaking Federal Advisory Committee: Notice of Intent to Establish the Dedicated Purpose Pool Pumps Working Group to Negotiate a Notice of Proposed Rulemaking (NOPR) for Energy Conservation Standards

  3. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  4. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-02-05

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  5. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  6. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  7. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  8. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  9. Polymers with increased order

    DOE Patents [OSTI]

    Sawan, Samuel P. (Tyngsborough, MA); Talhi, Abdelhafid (Rochester, MI); Taylor, Craig M. (Jemez Springs, NM)

    1998-08-25

    The invention features polymers with increased order, and methods of making them featuring a dense gas.

  10. The MAGIC Telescope Project for Gamma Astronomy above 10 GeV

    E-Print Network [OSTI]

    N. Magnussen

    1998-05-14

    A project to construct a 17 m diameter imaging air Cherenkov telescope, called the MAGIC Telescope, is described. The aim of the project is to close the observation gap in the gamma-ray sky extending from 10 GeV as the highest energy measurable by space-borne experiments to 300 GeV, the lowest energy measurable by the current generation of ground-based Cherenkov telescopes. The MAGIC Telescope will incorporate several new features in order to reach the very low energy threshold. At the same time the new technology will yield an improvement in sensitivity in the energy region where current Cherenkov telescopes are measuring by about an order of magnitude.

  11. Particle Production at 3 GeV X. Ding, UCLA

    E-Print Network [OSTI]

    McDonald, Kirk

    = 50m 0.02976 (neg: 0.01206, pos: 0.01770) Carbon 3 GeV, Z = 0m 0.03341 (neg: 0.01370, pos: 0.01971) Mercury 3 GeV, Z = 50 m 0.02096 (neg: 0.01070, pos: 0.01026) Mercury 3 GeV, Z = 0 m 0.02496 (neg: 0.01273, pos: 0.01223) Mercury 8 GeV, Z = 50 m 0.0263 (neg: 0.0136, pos: 0.0127) Mercury 8 GeV, Z = 0m 0

  12. 2014-08-07 Issuance: Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC)- Manufactured Housing Working Group; Notice of Open Meeting

    Broader source: Energy.gov [DOE]

    This document is a pre-publication Federal Register notice of open meeting regarding the Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC) - Manufactured Housing Working Group on August 7, 2014. Though it is not intended or expected, should any discrepancy occur between the document posted here and the document published in the Federal Register, the Federal Register publication controls. This document is being made available through the Internet solely as a means to facilitate the public's access to this document.

  13. April 30 Public Meeting: Physical Characterization of Smart and Grid-Connected Commercial and Residential Building End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    These documents contain slide decks presented at the Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances public meeting held on April 30, 2014. The first document includes the first presentation from the meeting: DOE Vision and Objectives. The second document includes all other presentations from the meeting: Terminology and Definitions; End-User and Grid Services; Physical Characterization Framework; Value, Benefits & Metrics.

  14. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ? x ? 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ?C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (“5:3”) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102?){sub m} || [101?0](12?11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu K? diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200?C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101?0] (12?11){s

  15. Ca{sub 2}Pd{sub 3}Ge, a new fully ordered ternary Laves phase...

    Office of Scientific and Technical Information (OSTI)

    Technial Information About OSTI Mission Organization Chart Achievements Alliances OSTI History Feedback DOE STI Program Scientific and Technical Information Program (STIP)...

  16. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    E-Print Network [OSTI]

    Polking, Mark J.

    2010-01-01

    rapid decline in scattering intensity of the crystalline A 1 phonon approaching the phase transition,

  17. Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on

    E-Print Network [OSTI]

    Gao, Hongjun

    , Institute of Physics and Center for Condensed Matter Physics, Chinese Academy of Sciences, P.O. Box 2724-doped mirror-polished Si(1 1 1) wafer with a resistivity of 1­2 X cm and a size of 12 Â 2 Â 0:5 mm3

  18. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  19. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  20. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  1. Eleven new compounds in the RE-Cd-Ge systems (RE=Pr, Nd, Sm, Gd-Yb; Y): Crystal chemistry of the RE{sub 2}CdGe{sub 2} series

    SciTech Connect (OSTI)

    Guo Shengping; Meyers, John J.; Tobash, Paul H. [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

    2012-08-15

    A large new family of rare-earth metal-cadmium-germanides RE{sub 2}CdGe{sub 2} (RE=Y, Pr, Nd, Sm, Gd-Yb) has been synthesized and structurally characterized. All eleven structures have been established from single-crystal X-ray diffraction data and have been found to belong to the tetragonal Mo{sub 2}FeB{sub 2} structure type (ordered ternary variant of the U{sub 3}Si{sub 2} structure type-space group P4/mbm (No. 127), Z=2; Pearson symbol tP10). The structural variations among the three series of isostructural RE{sub 2}MgGe{sub 2}, RE{sub 2}InGe{sub 2}, and RE{sub 2}CdGe{sub 2} compounds are discussed, as well as the crystal chemistry changes as a function of the decreasing size of the rare-earth metals (lattice constants a=7.176(2)-7.4589(12) A and c=4.1273(14)-4.4356(13) A). The experimental results have been complemented by tight-binding linear muffin-tin orbital (TB-LMTO) electronic structure calculations. - Graphical abstract: More than 300 compounds have been reported to crystallize with the tetragonal U{sub 3}Si{sub 2} structure type, or the Mo{sub 2}FeB{sub 2} structure type, which is its ordered ternary variant. Among them, there are several large RE{sub 2}CdX{sub 2} classes, where the X-elements are typically late transition metals such as Cu, Ni, Au, Pd, Pt, and Rh. The new RE{sub 2}CdGe{sub 2} phases (RE=Y, Pr, Nd, Sm, Gd-Yb) increase the diversity and represent the first cadmium germanides. Highlights: Black-Right-Pointing-Pointer RE{sub 2}CdGe{sub 2} (RE=Y, Pr, Nd, Sm, Gd-Yb) are new ternary germanides. Black-Right-Pointing-Pointer Their structures can be recognized as a 1:1 intergrowth of CsCl- and AlB{sub 2}-like slabs. Black-Right-Pointing-Pointer The Ge atoms are covalently bound into Ge{sub 2} dumbbells. Black-Right-Pointing-Pointer Almost all RE{sub 2}CdGe{sub 2} phases are the first structurally characterized phases in the respective ternary RE-Cd-Ge systems.

  2. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  3. Fisher & Paykel Appliances: ENERGY STAR Referral (WA42T26GW1) | Department

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12, 2015Executive Order14,EnergyFinancingWIPP |DepartmentOpening inof

  4. Colon Cancer Mapping | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 OutreachProductswsicloudwsiclouddenDVA N C E D BGene NetworkNuclearDNP 20082 P2014 CollegiateVanderbilt, GE Team

  5. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT Build

  6. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding in Actinide SandwichCrayCrosscuttingGE, MIT

  7. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration wouldMass mapSpeeding access| Department ofStephenSkinner,Past and Present EERE Budget PastGE's

  8. Game Changing Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear PhysicsGE GlobalGetting&Tools »GambitI

  9. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  10. Cs6Ge8Zn: A Zintl Phase with Isolated Heteroatomic Clusters of Ge8Zn

    E-Print Network [OSTI]

    a single phase of Cs6Ge8Zn.8 The plate-like crystals of the compound are brittle, black, and with coal-like luster. Single-crystal studies unveiled a new type of cluster formation, a dimer of corner different types. The clusters of type A have only a horizontal mirror plane (Cm) while the clusters of type

  11. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  12. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  13. The Proposed Majorana 76Ge Double-Beta Decay Experiment

    SciTech Connect (OSTI)

    Aalseth, Craig E.; Anderson, Dale N.; Arthur, Richard J.; Avignone, Frank T.; Baktash, Cryus; Ball, Thedore; Barabash, Alexander S.; Bertrand, F.; Brodzinski, Ronald L.; Brudanin, V.; Bugg, William; Champagne, A. E.; Chan, Yuen-Dat; Cianciolo, Thomas V.; Collar, J. I.; Creswick, R. W.; Descovich, M.; Di Marco, Marie; Doe, P. J.; Dunham, Glen C.; Efremenko, Yuri; Egerov, V.; Ejiri, H.; Elliott, Steven R.; Emanuel, A.; Fallon, Paul; Farach, H. A.; Gaitskell, R. J.; Gehman, Victor; Grzywacz, Robert; Hallin, A.; Hazma, R.; Henning, R.; Hime, Andrew; Hossbach, Todd W.; Jordan, David V.; Kazkaz, K.; Kephart, Jeremy; King, G. S.; Kochetov, Oleg; Konovalov, S.; Kouzes, Richard T.; Lesko, Kevin; Luke, P.; Luzum, M.; Macchiavelli, A. O.; McDonald, A.; Mei, Dongming; Miley, Harry S.; Mills, G. B.; Mokhtarani, A.; Nomachi, Masaharu; Orrell, John L.; Palms, John M.; Poon, Alan; Radford, D. C.; Reeves, James H.; Robertson, R. G. H.; Runkle, Robert C.; Rykaczewski, Krzysztof P.; Saburov, Konstantin; Sandukovsky, Viatcheslav; Sonnenschein, Andrew; Tornow, W.; Tull, C.; van de Water, R. G.; Vanushin, Igor; Vetter, Kai; Warner, Ray A.; Wilkerson, John F.; Wouters, Jan M.; Young , A. R.; Yumatov, V.

    2005-01-01

    The proposed Majorana experiment is based on an array of segmented intrinsic Ge detectors with a total mass of 500 kg of Ge isotopically enriched to 86% in 76Ge. Background reduction will be accomplished by: material selection, detector segmentation, pulse shape analysis, electro-formation of copper parts, and granularity of detector spacing. The predicted experimental sensitivity for measurement of the neutrinoless double-beta decay mode of 76Ge, over a data acquisition period of 5000 kg•y, is ~ 4?1027 y.

  14. GE funds initiative to support STEM initiatives in Oklahoma ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    investment in Oklahoma reflects GE's commitment to skills development for the future. "Growth and development go hand-in-hand with educational excellence, strength in science,...

  15. CMC technology revolutionary for aviation, power | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in new window) Novel CMC technology revolutionizes aircraft engines, turbines CMCs - Ceramic Matrix Composites - are a revolutionary material invented by GE scientists that offer...

  16. Heteroepitaxial Ge-on-Si by DC magnetron sputtering

    SciTech Connect (OSTI)

    Steglich, Martin; Schrempel, Frank; Füchsel, Kevin; Kley, Ernst-Bernhard; Patzig, Christian; Berthold, Lutz; Höche, Thomas; Tünnermann, Andreas; Fraunhofer Institute for Applied Optics and Precision Engineering IOF, Albert-Einstein-Str. 7, 07745 Jena

    2013-07-15

    The growth of Ge on Si(100) by DC Magnetron Sputtering at various temperatures is studied by Spectroscopic Ellipsometry and Transmission Electron Microscopy. Smooth heteroepitaxial Ge films are prepared at relatively low temperatures of 380°C. Typical Stransky-Krastanov growth is observed at 410°C. At lower temperatures (320°C), films are essentially amorphous with isolated nanocrystallites at the Si-Ge interface. A minor oxygen contamination at the interface, developing after ex-situ oxide removal, is not seen to hinder epitaxy. Compensation of dislocation-induced acceptors in Ge by sputtering from n-doped targets is proposed.

  17. Construction progresses at GE's Oil & Gas Technology Center ...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Home > Impact > Construction progressing at GE's newest research center, the Oil & Gas Technology Center in Oklahoma City Click to email this to a friend (Opens in new window)...

  18. RADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

    E-Print Network [OSTI]

    Pehl, Richard H.

    2011-01-01

    Parker, "Radiation Damage of Germanium Detectors", Bull. Am.to radiation damage between the two detectors was clearlyRADIATION DAMAGE RESISTANCE OF REVERSE ELECTRODE GE COAXIAL DETECTORS

  19. GE China Technology Center Wins Top 12 Most Innovative Practices...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    to our local markets and innovating technologies to meet the most urgent needs of Chinese society. Additionally, GE teams up with local customers to jointly develop innovative...

  20. The Wizard of Schenectady: Charles Proteus Steinmetz | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    week the Smithsonian's "Past Imperfect" blog highlighted a man near and dear to the heart of GE Global Research, Charles Proteus Steinmetz. The article paints a really...

  1. Big Data and Analytics at Work | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    time analytics is required At GE we keep pace with these trends via the Industrial Internet, a highly connected ecosystem of intelligent machines, advanced analytics and people...

  2. A Sneak Peek Into Santa's Smarter Sleigh | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    legs a break. - An upgraded sleigh frame made from GE's high temperature Ceramic Matrix Composites (CMCs). The CMCs can withstand the heat of entry and reentry in earth's...

  3. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  4. Thoughts From the 2012 Whitney Software Symposium | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Big Data, Modeling and Simulation, High Performance Computing and the Industrial Internet as key technological enablers of GE's Software initiatives. We enjoyed speakers from...

  5. EEDP and Other Leadership Programs | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ready to dive in? Apply for the program. GE Software Leadership Program The rise of the Industrial Internet requires a new breed of talent and organizational capability. New...

  6. Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning

    SciTech Connect (OSTI)

    Petz, C. W.; Floro, J. A.; Yang, D.; Levy, J.

    2012-04-02

    Artificially ordered quantum dot (QD) arrays, where confined carriers can interact via direct exchange coupling, may create unique functionalities such as cluster qubits and spintronic bandgap systems. Development of such arrays for quantum computing requires fine control over QD size and spatial arrangement on the sub-35 nm length scale. We employ electron-beam irradiation to locally decompose ambient hydrocarbons onto a bare Si (001) surface. These carbonaceous patterns are annealed in ultra-high vacuum (UHV), forming ordered arrays of nanoscale SiC precipitates that have been suggested to template subsequent epitaxial Ge growth to form ordered QD arrays. We show that 3C-SiC nanodots form, in cube-on-cube epitaxial registry with the Si substrate. The SiC nanodots are fully relaxed by misfit dislocations and exhibit small lattice rotations with respect to the substrate. Ge overgrowth at elevated deposition temperatures, followed by Si capping, results in expulsion of the Ge from SiC template sites due to the large chemical and lattice mismatch between Ge and C. Maintaining an epitaxial, low-defectivity Si matrix around the quantum dots is important for creating reproducible electronic and spintronic coupling of states localized at the QDs.

  7. Directives System Order

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-10-16

    The order prescribes the process for development of Policy Statements, Orders, Notices, Manuals and Guides, which are intended to guide, inform, and instruct employees in the performance of their jobs, and enable them to work effectively within the Department and with agencies, contractors, and the public.

  8. Structure of AgI-doped Ge-In-S glasses: Experiment, reverse Monte Carlo modelling, and density functional calculations

    SciTech Connect (OSTI)

    Chrissanthopoulos, A.; Jovari, P.; Kaban, I.; Gruner, S.; Kavetskyy, T.; Borc, J.; Wang, W.; Ren, J.; Chen, G.; Yannopoulos, S.N.

    2012-08-15

    We report an investigation of the structure and vibrational modes of Ge-In-S-AgI bulk glasses using X-ray diffraction, EXAFS spectroscopy, Reverse Monte-Carlo (RMC) modelling, Raman spectroscopy, and density functional theoretical (DFT) calculations. The combination of these techniques made it possible to elucidate the short- and medium-range structural order of these glasses. Data interpretation revealed that the AgI-free glass structure is composed of a network where GeS{sub 4/2} tetrahedra are linked with trigonal InS{sub 3/2} units; S{sub 3/2}Ge-GeS{sub 3/2} ethane-like species linked with InS{sub 4/2}{sup -} tetrahedra form sub-structures which are dispersed in the network structure. The addition of AgI into the Ge-In-S glassy matrix causes appreciable structural changes, enriching the Indium species with Iodine terminal atoms. The existence of trigonal species InS{sub 2/2}I and tetrahedral units InS{sub 3/2}I{sup -} and InS{sub 2/2}I{sub 2}{sup -} is compatible with the EXAFS and RMC analysis. Their vibrational properties (harmonic frequencies and Raman activities) calculated by DFT are in very good agreement with the experimental values determined by Raman spectroscopy. - Graphical abstract: Experiment (XRD, EXAFS, RMC, Raman scattering) and density functional calculations are employed to study the structure of AgI-doped Ge-In-S glasses. The role of mixed structural units as illustrated in the figure is elucidated. Highlights: Black-Right-Pointing-Pointer Doping Ge-In-S glasses with AgI causes significant changes in glass structure. Black-Right-Pointing-Pointer Experiment and DFT are combined to elucidate short- and medium-range structural order. Black-Right-Pointing-Pointer Indium atoms form both (InS{sub 4/2}){sup -} tetrahedra and InS{sub 3/2} planar triangles. Black-Right-Pointing-Pointer (InS{sub 4/2}){sup -} tetrahedra bond to (S{sub 3/2}Ge-GeS{sub 3/2}){sup 2+} ethane-like units forming neutral sub-structures. Black-Right-Pointing-Pointer Mixed chalcohalide species (InS{sub 3/2}I){sup -} offer vulnerable sites for the uptake of Ag{sup +}.

  9. An alternative route for efficient optical indirect-gap excitation in Ge

    SciTech Connect (OSTI)

    Sakamoto, Tetsuya; Hayashi, Shuhei; Fukatsu, Susumu, E-mail: cfkatz@mail.ecc.u-tokyo.ac.jp [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yasutake, Yuhsuke [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012 (Japan)

    2014-07-28

    We explored optical excitation pathways in the multivalley semiconductor Ge in an attempt to expedite selective electron injection into the indirect L-band-edge. An off-peak resonant excitation route was developed, which offers the pumping efficiency outperforming the phonon-assisted near-indirect-edge absorption by more than six orders of magnitude. The valley selectivity results from the intra-valley relaxation that separates electrons and holes in momentum space following excitation. Fortuitously, the widely used green laser, 532?nm, is found to be nearly ideally suited to the efficient L-valley-selective excitation in Ge. Such valley-specific pumping may help clarify the otherwise complicated electron dynamics involving intervalley processes.

  10. 6 GeV Parity Violating Deep Inelastic Scattering at Jefferson Laboratory

    SciTech Connect (OSTI)

    Subedi, Ramesh R.; Deng Xiaoyan; Wang Diancheng; Zheng Xiaochao; Michaels, Robert; Pan Kai; Reimer, Paul E.

    2011-10-24

    The 6 GeV Parity Violating Deep Inelastic Scattering (PVDIS) experiment has measured a 10{sup -4} level asymmetry through polarized electron scattering off a liquid deuterium target with a beam energy of 6 GeV. This experiment has a goal of measuring a combination of the product of the weak neutral couplings of the electron and the quark with a factor of six improvement in precision over world data. Precise data for the couplings are essential to search for physics beyond the Standard Model. The experiment took place in Hall A at Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) and data collection was completed in the end of 2009. A highly specialized counting data acquisition system with an inherent particle identification was developed and utilized. We have taken data at two Q{sup 2} points in order to possibly address the hadronic correction due to higher twist effects. An overview of the experiment will be presented.

  11. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han Yu, Zhongyuan

    2014-11-15

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  12. Magnetic, dielectric, and magnetoelectric properties in Sr{sub 2}CoGe{sub 2}O{sub 7}

    SciTech Connect (OSTI)

    Song, Y. Q.; Li, Q.; Zhou, W. P.; Cao, Q. Q.; Wang, D. H. Du, Y. W.; Zhang, Z. M.; Xu, Q. Y.

    2015-05-07

    We investigate the magnetoelectric effect in Sr{sub 2}CoGe{sub 2}O{sub 7}, which has a two-dimensional magnetic interaction between Co ions in the ab plane. This compound shows a weak magnetism and field-induced magnetic transition below the temperature of 7?K. It does not exhibit electric polarization under zero magnetic field. However, by applying an external magnetic field, the electric polarization is induced around its Néel temperature and increases with increasing magnetic field. The induced electric polarization in Sr{sub 2}CoGe{sub 2}O{sub 7} is almost two orders of magnitude smaller than that of Ba{sub 2}CoGe{sub 2}O{sub 7}. This result suggests that the different ionic radius of the strontium and the barium anion plays a key role in determining the property of electric polarization. The origins of electric polarization and magnetoelectric effect are discussed.

  13. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  14. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  15. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  16. Nucleon Resonances Near 2 GeV

    E-Print Network [OSTI]

    He, Jun

    2015-01-01

    The nucleon resonances near 2 GeV are investigated through the $\\Sigma$(1385) and $\\Lambda(1520)$ photoproductions within a Regge-plus-resonance approach based on the new experimental data released by the CLAS Collaboration. The $\\Delta(2000)$ and the $N(2120)$ are found essential to reproduce the experimental data and should be assigned as second $[\\Delta 5/2^+]$ and third $[N3/2^-]$ in the constituent quark model, respectively. A calculation of the binding energy and decay pattern supports that the $N(1875)$, which is listed in the PDG as the third $N3/2^-$ nucleon resonance instead of the $N(2120)$, is from the $\\Sigma(1385)K$ interaction rather than a three quark state.

  17. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  18. 2014-07-21 Issuance: Appliance Standards and Rulemaking Federal Adivsory Committee (ASRAC)- Manufactured Housing Working Group; Notice of Open Meeting

    Broader source: Energy.gov [DOE]

    This document is a pre-publication Federal Register notice of public meeting for the Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC) - Manufactured Housing Working Group, as issued by the Deputy Assistant Secretary for Energy Efficiency on July 21, 2014. Though it is not intended or expected, should any discrepancy occur between the document posted here and the document published in the Federal Register, the Federal Register ?publication controls. This document is being made available through the Internet solely as a means to facilitate the public's access to this document.

  19. 2014-08-19 Issuance Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC)- Central Air Conditioner Regional Standards Enforcement Working Group; Notice of Open Meetings

    Broader source: Energy.gov [DOE]

    This document is a pre-publication Federal Registe notice of open meetings regarding the Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC) - Central Air Conditioner Regional Standards Enforcement Working Group, as issued by the Deputy Assistant Secretary for Energy Efficiency on August 19, 2014. Though it is not intended or expected, should any discrepancy occur between the document posted here and the document published in the Federal Register, the Federal Register publication controls. This document is being made available through the Internet solely as a means to facilitate the public's access to this document.

  20. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  1. Ge#ng Started on HokieSpeed

    E-Print Network [OSTI]

    Crawford, T. Daniel

    Ge#ng Started on HokieSpeed Advanced Research Computing #12;Advanced Research Compu:ng;Advanced Research Compu:ng Important Login Informa:on · Account sheets provide login Compu:ng Ge#ng Started Steps 1. Sheet distributed provides your training account

  2. Superconductors with Topological Order

    E-Print Network [OSTI]

    M. C. Diamantini; P. Sodano; C. A. Trugenberger

    2005-11-18

    We propose a mechanism of superconductivity in which the order of the ground state does not arise from the usual Landau mechanism of spontaneous symmetry breaking but is rather of topological origin. The low-energy effective theory is formulated in terms of emerging gauge fields rather than a local order parameter and the ground state is degenerate on topologically non-trivial manifolds. The simplest example of this mechanism of superconductivty is concretely realized as global superconductivty in Josephson junction arrays.

  3. Magnetic behavior of LaMn{sub 2}(Si{sub (1?x)}Ge{sub x}){sub 2} compounds characterized by magnetic hyperfine field measurements

    SciTech Connect (OSTI)

    Bosch-Santos, B., E-mail: brianna@usp.br; Carbonari, A. W.; Cabrera-Pasca, G. A.; Saxena, R. N. [Instituto de Pesquisas Energéticas e Nucleares, University of São Paulo, 05508-000 São Paulo (Brazil)

    2014-05-07

    The temperature dependence of the magnetic hyperfine field (B{sub hf}) at Mn atom sites was measured in LaMn{sub 2}(Si{sub (1?x)}Ge{sub x}){sub 2}, with 0???x???1, compounds with perturbed ??? angular correlation spectroscopy using {sup 111}In({sup 111}Cd) as probe nuclei in the temperature range from 20?K to 480?K. The results show a transition from antiferromagnetic to ferromagnetic ordering for all studied compounds when Ge gradually replaces Si and allowed an accurate determination of the Néel temperature (T{sub N}) for each compound. It was observed that T{sub N} decreases when Ge concentration increases. Conversely, the Curie temperature increases with increase of Ge concentration. This remarkable change in the behavior of the transition temperatures is discussed in terms of the Mn-Mn distance and ascribed to a change in the exchange constant J{sub ex}.

  4. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  5. Ge interface engineering using ultra-thin La{sub 2}O{sub 3} and Y{sub 2}O{sub 3} films: A study into the effect of deposition temperature

    SciTech Connect (OSTI)

    Mitrovic, I. Z., E-mail: ivona@liverpool.ac.uk; Weerakkody, A. D.; Sedghi, N.; Hall, S. [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ (United Kingdom); Althobaiti, M.; Dhanak, V. R.; Linhart, W. M.; Veal, T. D. [Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Chalker, P. R. [Department of Engineering, University of Liverpool, Brownlow Hill, Liverpool L69 3GH (United Kingdom); Tsoutsou, D.; Dimoulas, A. [NCSR Demokritos, MBE Laboratory, Institute of Materials Science, 153 10 Athens (Greece)

    2014-03-21

    A study into the optimal deposition temperature for ultra-thin La{sub 2}O{sub 3}/Ge and Y{sub 2}O{sub 3}/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La{sub 2}O{sub 3} and Y{sub 2}O{sub 3}) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La{sub 2}O{sub 3} has been found to be more reactive to Ge than Y{sub 2}O{sub 3}, forming LaGeO{sub x} and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44?°C to 400?°C. In contrast, Y{sub 2}O{sub 3}/Ge deposited at 400?°C allows for an ultra-thin GeO{sub 2} layer at the interface, which can be eliminated during annealing at temperatures higher than 525?°C leaving a pristine YGeO{sub x}/Ge interface. The Y{sub 2}O{sub 3}/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1?eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y{sub 2}O{sub 3}/Ge stacks has been estimated to be 5.7?±?0.1?eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400?°C), the Y{sub 2}O{sub 3}/Ge stack exhibits a higher conduction band offset (>2.3?eV) than the La{sub 2}O{sub 3}/Ge (?2?eV), has a larger band gap (by about 0.3?eV), a germanium sub-oxide free interface, and leakage current (?10{sup ?7}?A/cm{sup 2} at 1?V) five orders of magnitude lower than the respective La{sub 2}O{sub 3}/Ge stack. Our study strongly points to the superiority of the Y{sub 2}O{sub 3}/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology.

  6. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J June 2013) The thermoelectric and physical properties of superlattices consisting of modulation doped

  7. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  8. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  9. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  10. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  11. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  12. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  13. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  14. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  15. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M.; Soares, G. V.; Hartmann, S.; Bordin, A.; Radtke, C.

    2014-10-06

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  16. Transient and temperature-dependent phenomena in Ge:Be and Ge:Zn far infrared photoconductors

    SciTech Connect (OSTI)

    Haegel, N.M.

    1985-11-01

    An experimental study of the transient and temperature-dependent behavior of Ge:Be and Ge:Zn photoconductors has been performed under the low background photon flux conditions (p dot approx. = 10/sup 8/ photons/second) typical of astronomy and astrophysics applications. The responsivity of Ge:Be and Ge:Zn detectors is strongly temperature-dependent in closely compensated material, and the effect of compensation on free carrier lifetime in Ge:Be has been measured using the photo-Hall effect technique. Closely compensated material has been obtained by controlling the concentration of novel hydrogen-related shallow acceptor complexes, A(Be,H) and A(Zn,H), which exist in doped crystals grown under a H/sub 2/ atmosphere. A review of selection criteria for multilevel materials for optimum photoconductor performance is included. 55 refs., 47 figs.

  17. Ternary rare-earth ruthenium and iridium germanides RE{sub 3}M{sub 2}Ge{sub 3} (RE=Y, Gd–Tm, Lu; M=Ru, Ir)

    SciTech Connect (OSTI)

    Oliynyk, Anton O.; Stoyko, Stanislav S.; Mar, Arthur, E-mail: arthur.mar@ualberta.ca

    2013-06-15

    Through arc-melting reactions of the elements and annealing at 800 °C, the ternary rare-earth germanides RE{sub 3}Ru{sub 2}Ge{sub 3} and RE{sub 3}Ir{sub 2}Ge{sub 3} have been prepared for most of the smaller RE components (RE=Y, Gd–Tm, Lu). In the iridium-containing reactions, the new phases RE{sub 2}IrGe{sub 2} were also generally formed as by-products. Powder X-ray diffraction revealed orthorhombic Hf{sub 3}Ni{sub 2}Si{sub 3}-type structures (space group Cmcm, Z=4) for RE{sub 3}M{sub 2}Ge{sub 3} (M=Ru, Ir) and monoclinic Sc{sub 2}CoSi{sub 2}-type structures (space group C2/m, Z=4) for RE{sub 2}IrGe{sub 2}. Full crystal structures were determined by single-crystal X-ray diffraction for all members of RE{sub 3}Ru{sub 2}Ge{sub 3} (a=4.2477(6) Å, b=10.7672(16) Å, c=13.894(2) Å for RE=Y; a=4.2610(3)–4.2045(8) Å, b=10.9103(8)–10.561(2) Å, c=14.0263(10)–13.639(3) Å in the progression of RE from Gd to Lu) and for Tb{sub 3}Ir{sub 2}Ge{sub 3} (a=4.2937(3) Å, b=10.4868(7) Å, c=14.2373(10) Å). Both structures can be described in terms of CrB- and ThCr{sub 2}Si{sub 2}-type slabs built from Ge-centred trigonal prisms. However, band structure calculations on Y{sub 3}Ru{sub 2}Ge{sub 3} support an alternative description for RE{sub 3}M{sub 2}Ge{sub 3} based on [M{sub 2}Ge{sub 3}] layers built from linked MGe{sub 4} tetrahedra, which emphasizes the strong M–Ge covalent bonds present. The temperature dependence of the electrical resistivity of RE{sub 3}Ru{sub 2}Ge{sub 3} generally indicates metallic behaviour but with low-temperature transitions visible for some members (RE=Gd, Tb, Dy) that are probably associated with magnetic ordering of the RE atoms. Anomalously, Y{sub 3}Ru{sub 2}Ge{sub 3} exhibits semiconductor-like behaviour of uncertain origin. Magnetic measurements on Dy{sub 3}Ru{sub 2}Ge{sub 3} reveal antiferromagnetic ordering at 3 K and several unusual field-dependent transitions suggestive of complex spin reorientation processes. - Graphical abstract: RE{sub 3}M{sub 2}Ge{sub 3} (M=Ru, Ir) adopts the Hf{sub 3}Ni{sub 2}Si{sub 3}-type structure containing slabs built up from Ge-centred trigonal prisms. - Highlights: • Crystal structures of RE{sub 3}Ru{sub 2}Ge{sub 3} (RE=Y, Gd–Tm, Lu) and Tb{sub 3}Ir{sub 2}Ge{sub 3} were determined. • Strong M–Ge covalent bonds were confirmed by band structure calculations. • Most RE{sub 3}Ru{sub 2}Ge{sub 3} members except Y{sub 3}Ru{sub 2}Ge{sub 3} exhibit metallic behaviour. • Dy{sub 3}Ru{sub 2}Ge{sub 3} displays unusual field-dependent magnetic transitions.

  18. Ion beam synthesis of SiGe alloy layers

    SciTech Connect (OSTI)

    Im, Seongil

    1994-05-01

    Procedures required for minimizing structural defects generated during ion beam synthesis of SiGe alloy layers were studied. Synthesis of 200 mm SiGe alloy layers by implantation of 120-keV Ge ions into <100> oriented Si wafers yielded various Ge peak concentrations after the following doses, 2{times}10{sup 16}cm{sup {minus}2}, 3{times}10{sup 16}cm{sup {minus}2} (mid), and 5{times}10{sup 16}cm{sup {minus}2} (high). Following implantation, solid phase epitaxial (SPE) annealing in ambient N2 at 800C for 1 hr. resulted in only slight redistribution of the Ge. Two kinds of extended defects were observed in alloy layers over 3{times}l0{sup 16}cm{sup {minus}2}cm dose at room temperature (RT): end-of-range (EOR) dislocation loops and strain-induced stacking faults. Density of EOR dislocation loops was much lower in alloys produced by 77K implantation than by RT implantation. Decreasing the dose to obtain 5 at% peak Ge concentration prevents strain relaxation, while those SPE layers with more than 7 at% Ge peak show high densities of misfit- induced stacking faults. Sequential implantation of C following high dose Ge implantation (12 at% Ge peak concentration in layer) brought about a remarkable decrease in density of misfit-induced stacking faults. For peak implanted C > 0.55 at%, stacking fault generation in the epitaxial layer was suppressed, owing to strain compensation by C atoms in the SiGe lattice. A SiGe alloy layer with 0.9 at% C peak concentration under a 12 at% Ge peak exhibited the best microstructure. Results indicate that optimum Ge/C ratio for strain compensation is between 11 and 22. The interface between amorphous and regrown phases (a/c interface) had a dramatic morphology change during its migration to the surface. Initial <100> planar interface decomposes into a <111> faceted interface, changing the growth kinetics; this is associated with strain relaxation by stacking fault formation on (111) planes in the a/c interface.

  19. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  20. The cephalopod order Discosorida

    E-Print Network [OSTI]

    Flower, R. H.; Teichert, C.

    1957-07-01

    UNIVERSITY OF KANSAS PALEONTOLOGICAL CONTRIBUTIONS MOLLUSCA ARTICLE 6 Pages 1-144, Plates 1-43, Figures 1-34 THE CEPHALOPOD ORDER DISCOSORIDA By ROUSSEAU H. FLOWER and CURT TEICHERT UNIVERSITY OF KANSAS PUBLICATIONS JULY 1, 1957 PRINTED BY UNIVERSITY.... A list of previously published issues appears at the end of this report. UNIVERSITY OF KANSAS PALEONTOLOGICAL CONTRIBUTIONS MOLLUSCA, ARTICLE 6, PAGES 1-144, PLATES 1-43, FIGURES 1-34 THE CEPHALOPOD ORDER DISCOSORIDA By ROUSSEAU H. FLOWER 1 and CURT...

  1. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  2. Determinants of residential electricity consumption: Using smart meter data to examine the effect of climate, building characteristics, appliance stock, and occupants' behavior

    SciTech Connect (OSTI)

    Kavousian, A; Rajagopal, R; Fischer, M

    2013-06-15

    We propose a method to examine structural and behavioral determinants of residential electricity consumption, by developing separate models for daily maximum (peak) and minimum (idle) consumption. We apply our method on a data set of 1628 households' electricity consumption. The results show that weather, location and floor area are among the most important determinants of residential electricity consumption. In addition to these variables, number of refrigerators and entertainment devices (e.g., VCRs) are among the most important determinants of daily minimum consumption, while number of occupants and high-consumption appliances such as electric water heaters are the most significant determinants of daily maximum consumption. Installing double-pane windows and energy-efficient lights helped to reduce consumption, as did the energy-conscious use of electric heater. Acknowledging climate change as a motivation to save energy showed correlation with lower electricity consumption. Households with individuals over 55 or between 19 and 35 years old recorded lower electricity consumption, while pet owners showed higher consumption. Contrary to some previous studies, we observed no significant correlation between electricity consumption and income level, home ownership, or building age. Some otherwise energy-efficient features such as energy-efficient appliances, programmable thermostats, and insulation were correlated with slight increase in electricity consumption. (C) 2013 Elsevier Ltd. All rights reserved.

  3. Structural and magnetic properties in the polymorphs of CeRh{sub 0.5}Ge{sub 1.5}

    SciTech Connect (OSTI)

    Kalsi, Deepti; Subbarao, Udumula [New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560064 (India); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, R-5 Shed, B.A.R.C Campus, Trombay, Mumbai-400085 (India); Peter, Sebastian C., E-mail: sebastiancp@jncasr.ac.in [New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560064 (India)

    2014-04-01

    We investigate the structural and magnetic properties in the polymorphs of a new compound CeRh{sub 0.5}Ge{sub 1.5}. Depending upon the starting materials, and the slightly different synthesis method, we find that CeRh{sub 0.5}Ge{sub 1.5} compound exists in two different space groups. The first compound, ?-CeRh{sub 0.5}Ge{sub 1.5} crystallizes in tetragonal ?-ThSi{sub 2} structure type in space group I4{sub 1}/amd with lattice parameters, a=4.2034(6) Å and c=14.770(3) Å. In this structure, the cerium atoms occupy the position between the Rh/Ge tetrahedral layers. On the other hand, the second compound, namely ?-CeRh{sub 0.5}Ge{sub 1.5} crystallizes in the AlB{sub 2} type hexagonal structure in space group P6/mmm, with lattice parameters, a=4.2615(7) Å and c=4.1813(9) Å. The crystal structure of ?-CeRh{sub 0.5}Ge{sub 1.5} consists of two dimensional Rh/Ge hexagonal units and the cerium atoms are sandwiched between them. Magnetization studies exhibit magnetic ordering, as evident from a sharp peak in the plot of magnetic susceptibility measured as a function of temperature in a fixed magnetic field, in ?-CeRh{sub 0.5}Ge{sub 1.5} and ?-CeRh{sub 0.5}Ge{sub 1.5} at 3.6 K and 12 K, respectively. Structural and magnetic properties of both compounds are presented and discussed here. - Graphical abstract: Two polymorphs of a new compound CeRh{sub 0.5}Ge{sub 1.5} in the ?-ThSi{sub 2} and AlB{sub 2} structure types were synthesized by arc melting. The magnetic measurements of both CeRh{sub 0.5}Ge{sub 1.5} phases suggest spin-glass behavior. - Highlights: • A new compound CeRh{sub 0.5}Ge{sub 1.5} in two difference phases was synthesized by arc melting. • The crystal structure of both compounds was determined from the single crystal XRD. • Isothermal relaxation measurements suggesting spin-glass like anomalies in both phases.

  4. Compressively strained Ge trigate p-MOSFETs

    E-Print Network [OSTI]

    Chern, Winston

    2012-01-01

    State of the art MOSFET performance is limited by the electronic properties of the material that is being used, silicon (Si). In order to continue performance enhancements, different materials are being studied for the ...

  5. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  6. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclear Physics (NP)aboutRio deCooperation atThe GE

  7. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  8. Higher order corrections and unification in the minimal supersymmetric standard model: SOFTSUSY3.5

    E-Print Network [OSTI]

    Allanach, B. C.; Bednyakov, A.; Ruiz de Austri, R.

    2014-12-18

    spectrum calculators. We also explore the effect of the higher order terms (often 2–3 GeV) on the lightest CP even Higgs mass prediction. We illustrate our results in the constrained minimal supersymmetric standard model. Neglecting threshold corrections...

  9. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  10. Atomic imaging and modeling of H{sub 2}O{sub 2}(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface

    SciTech Connect (OSTI)

    Kaufman-Osborn, Tobin [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Chagarov, Evgueni A. [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-05-28

    Passivation, functionalization, and atomic layer deposition nucleation via H{sub 2}O{sub 2}(g) and trimethylaluminum (TMA) dosing was studied on the clean Ge(100) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed using x-ray photoelectron spectroscopy, while the bonding of the precursors to the substrate was modeled with density functional theory (DFT). At room temperature, a saturation dose of H{sub 2}O{sub 2}(g) produces a monolayer of a mixture of –OH or –O species bonded to the surface. STS confirms that H{sub 2}O{sub 2}(g) dosing eliminates half-filled dangling bonds on the clean Ge(100) surface. Saturation of the H{sub 2}O{sub 2}(g) dosed Ge(100) surface with TMA followed by a 200?°C anneal produces an ordered monolayer of thermally stable Ge–O–Al bonds. DFT models and STM simulations provide a consistent model of the bonding configuration of the H{sub 2}O{sub 2}(g) and TMA dosed surfaces. STS verifies the TMA/H{sub 2}O{sub 2}/Ge surface has an unpinned Fermi level with no states in the bandgap demonstrating the ability of a Ge–O–Al monolayer to serve as an ideal template for further high-k deposition.

  11. Direct band gap narrowing in highly doped Ge

    E-Print Network [OSTI]

    Han, Zhaohong

    Direct band gap narrowing in highly doped n-type Ge is observed through photoluminescence measurements by determining the spectrum peak shift. A linear relationship between the direct band gap emission and carrier concentration ...

  12. Growth strategies to control tapering in Ge nanowires

    SciTech Connect (OSTI)

    Periwal, P.; Baron, T., E-mail: thierry.baron@cea.fr; Salem, B.; Bassani, F. [Laboratoire des Technologies de la Microelectronique (LTM), UMR 5129 CNRS-UJF, CEA Grenoble, 17 Rue des Martyrs, 38054 Grenoble (France); Gentile, P. [SiNaPs Laboratory SP2M, UMR-E, CEA/UJF-Grenoble 1, INAC, 38054 Grenoble (France)

    2014-04-01

    We report the effect of PH{sub 3} on the morphology of Au catalyzed Ge nanowires (NWs). Ge NWs were grown on Si (111) substrate at 400?°C in the presence of PH{sub 3}, using vapor-liquid-solid method by chemical vapor deposition. We show that high PH{sub 3}/GeH{sub 4} ratio causes passivation at NW surface. At high PH{sub 3} concentration phosphorous atoms attach itself on NW surface and form a self-protection coating that prevents conformal growth and leads to taper free nanostructures. However, in case of low PH{sub 3} flux the combination of axial and radial growth mechanism occurs resulting in conical structure. We have also investigated axial PH{sub 3}-intrinsic junctions in Ge NWs. The unusual NW shape is attributed to a combination of catalyzed, uncatalyzed and diffusion induced growth.

  13. Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

    E-Print Network [OSTI]

    Kan, Eric Win Hong

    Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) ...

  14. Discovery of Isotopes of Elements with Z $\\ge$ 100

    E-Print Network [OSTI]

    M. Thoennessen

    2012-03-09

    Currently, 163 isotopes of elements with Z $\\ge$ 100 have been observed and the discovery of these isotopes is discussed here. For each isotope a brief synopsis of the first refereed publication, including the production and identification method, is presented.

  15. Ge-on-Si laser operating at room temperature

    E-Print Network [OSTI]

    Liu, Jifeng

    Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide ...

  16. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE, OCAST and OSSM Partner to Launch "STEM Empowers OK" Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to share (Opens in new...

  17. "Big Picture" Process Modeling Tools |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Using process modeling tools to attain cost-effective results for GE customers Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  18. ORNL Partners with GE on New Hybrid | ornl.gov

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    electric storage water heater, positioning GE to be the first company to meet the energy-saving standard. According to DOE, using devices that meet these criteria should save...

  19. Kids Invention: Vision of the Future |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Bring your Child to Work Day, to student mentoring, teaching in the class room, Invention Convention and Science Day. To take the message nationally, GE teamed up with the...

  20. The Need for Biological Computation System Models | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    2012.10.09 Hello everyone, I'm Maria Zavodszky and I work in the Computational Biology and Biostatistics Lab at GE Global Research in Niskayuna, New York. This being our...

  1. Demonstration of 2nd Generation Ducted GE "Brillion" Hybrid Water

    E-Print Network [OSTI]

    sharing partners. #12;Project Synopsis Evaluate the performance and demand response (DR) of the Gen II GE/frequency response) in the PNW and nationwide (Lu et al, 2011; Diao et al 2012) The demand response characteristics

  2. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; Ren, Yuan; Vasudevan, Rama K; Okatan, Mahmut Baris; Jesse, Stephen; Aoki, Toshihiro; McCartney, Martha; Smith, David J; Kalinin, Sergei V; Lai, Keji; Demkov, Alexander A.

    2015-01-01

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

  3. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  4. Unplug appliances electrical shock

    E-Print Network [OSTI]

    to drink, cook, or clean. Use fans, air conditioning units, and dehumidifiers for drying. For cleanup, wear

  5. Appliance and Equipment Standards

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of Natural GasAdjustmentsShirleyEnergyTher i n c i p a l De p u t yWaste |4 2014 AnnualDOE's Report to< Back Savings<

  6. Energy Star Appliances

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submitKansasCommunities EnergyU.S. DOE

  7. Members of a workshop at the tenth IAYC Conference, July 7, 2006 1. ge -hak -te le -ber, ge -fil -te -fish: sha-bes iz a far -ge -ni -gn

    E-Print Network [OSTI]

    Finkel, Raphael

    A SUDE Members of a workshop at the tenth IAYC Conference, July 7, 2006 = 90 4 4 1. ge - hak - te le - ber, ge - fil - te - fish: sha- bes iz a far - ge - ni - gn 2. kha - le gri - vn, ku - gl yoykh: ku - men on di ma - khe - to - nem. 3. shtru - dl, tsi - mes, zi - se kalte: a su - de vos men vet ge

  8. A Simple Recipe for the 111 and 128 GeV Lines

    E-Print Network [OSTI]

    JiJi Fan; Matthew Reece

    2013-08-03

    Recently evidence for gamma ray lines at energies of approximately 111 and 128 GeV has been found in Fermi-LAT data from the center of the galaxy and from unassociated point sources. Many explanations in terms of dark matter particle pairs annihilating to gamma gamma and gamma Z have been suggested, but these typically require very large couplings or mysterious coincidences in the masses of several new particles to fit the signal strength. We propose a simple novel explanation in which dark matter is part of a multiplet of new states which all have mass near 260 GeV as a result of symmetry. Two dark matter particles annihilate to a pair of neutral particles in this multiplet which subsequently decay to gamma gamma and gamma Z. For example, one may have a triplet of pseudo-Nambu-Goldstone bosons, charged pions and a neutral pion, where the charged pions are stabilized by their charge under a new U(1) symmetry and the slightly lighter neutral pion state decays to gamma gamma and gamma Z. The symmetry structure of such a model explains the near degeneracy in masses needed for the resulting photons to have a line-like shape and the large observed flux. The tunable lifetime of the neutral state allows such models to go unseen at direct detection or collider experiments that can constrain most other explanations. However, nucleosynthesis constraints on the neutral pion lifetime fix a minimum necessary coupling between the new multiplet and the Standard Model. The spectrum is predicted to be not a line but a box with a width of order a few GeV, smaller than but on the order of the Fermi-LAT resolution.

  9. Spin-Glass Behavior in a Giant Unit Cell Compound Tb117Fe52Ge113.8(1)

    SciTech Connect (OSTI)

    Liu, Jing; Xie, Weiwei; Gschneidner, Karl A; Miller, Gordon J; Pecharsky, Vitalij K

    2014-10-15

    In this paper we demonstrate evidence of a cluster spin glass in Tb117Fe52Ge113.8(1) (a compound with a giant cubic unit cell) via ac and dc magnetic susceptibility, magnetization, magnetic relaxation and heat capacity measurements. The results clearly show that Tb117Fe52Ge113.8(1) undergoes a spin glass phase transition at the freezing temperature, ~38?K. The good fit of the frequency dependence of the freezing temperature to the critical slowing down model and Vogel-Fulcher law strongly suggest the formation of cluster glass in the Tb117Fe52Ge113.8(1) system. The heat capacity data exhibit no evidence for long-range magnetic order, and yield a large value of Sommerfeld coefficient. The spin glass behavior of Tb117Fe52Ge113.8(1) may be understood by assuming the presence of competing interactions among multiple non-equivalent Tb sites present in the highly complex unit cell.

  10. Modeling of 10 GeV-1 TeV laser-plasma accelerators using Lorentz booster simulations

    SciTech Connect (OSTI)

    Vay, J.-L.; Geddes, C.G.R.; Esarey, E.; Esarey, E.; Leemans, W.P.; Cormier-Michel, E.; Grote, D.P.

    2011-12-01

    Modeling of laser-plasma wakefield accelerators in an optimal frame of reference [J.-L. Vay, Phys. Rev. Lett. 98 130405 (2007)] allows direct and e#14;fficient full-scale modeling of deeply depleted and beam loaded laser-plasma stages of 10 GeV-1 TeV (parameters not computationally accessible otherwise). This verifies the scaling of plasma accelerators to very high energies and accurately models the laser evolution and the accelerated electron beam transverse dynamics and energy spread. Over 4, 5 and 6 orders of magnitude speedup is achieved for the modeling of 10 GeV, 100 GeV and 1 TeV class stages, respectively. Agreement at the percentage level is demonstrated between simulations using different frames of reference for a 0.1 GeV class stage. Obtaining these speedups and levels of accuracy was permitted by solutions for handling data input (in particular particle and laser beams injection) and output in a relativistically boosted frame of reference, as well as mitigation of a high-frequency instability that otherwise limits effectiveness.

  11. Formation of long-range ordered quantum dots arrays in amorphous matrix by ion beam irradiation

    SciTech Connect (OSTI)

    Buljan, M.; Bogdanovic-Radovic, I.; Karlusic, M.; Desnica, U. V.; Radic, N.; Dubcek, P.; Drazic, G.; Salamon, K.; Bernstorff, S.; Holy, V.

    2009-08-10

    We demonstrate the production of a well ordered three-dimensional array of Ge quantum dots in amorphous silica matrix. The ordering is achieved by ion beam irradiation and annealing of a multilayer film. Structural analysis shows that quantum dots nucleate along the direction of the ion beam used for irradiation, while the mutual distance of the quantum dots is determined by the diffusion properties of the multilayer material rather than the distances between traces of ions that are used for irradiation.

  12. GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 7, Feb 2013, JC Program Change Pathway Today's Date to General English. How many sessions of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take? 21 hours 27 hours OR ____ I am a Pathway student, and I would like

  13. CTu2J.1.pdf CLEO Technical Digest OSA 2012 Light Emission in Ge Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.1.pdf CLEO Technical Digest © OSA 2012 Light Emission in Ge Quantum Wells Edward T. Fei1 Engineering, Stanford University, Stanford, CA 94305, USA edfei@stanford.edu Abstract: We present the Ge/SiGe and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk

  14. College of Engineering Partner Schools Australia Melbourne University, Melbourne GE3*

    E-Print Network [OSTI]

    Lee, Tonghun

    College of Engineering Partner Schools Australia Melbourne University, Melbourne ­ GE3* University of New South Wales, New South Wales ­ GE3* Austria Technical University of Vienna, Vienna - GE3* Chile Universidad del Bio Bio, Concepcion China Xiamen University, Xiamen ­ GE3* Denmark Aalborg University, Aalborg

  15. On the Comparison of Fisher Information of the Weibull and GE Distributions

    E-Print Network [OSTI]

    Kundu, Debasis

    On the Comparison of Fisher Information of the Weibull and GE Distributions Rameshwar D. Gupta exponen- tial (GE) and Weibull distributions for complete and Type-I censored observations. Fisher is much more than the GE distribution. We compute the total information of the Weibull and GE

  16. GE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program

    E-Print Network [OSTI]

    history of working with the DOE on critical energy programs. Jon Ebacher, Vice President of GE PowerGE Hosts Visit by DOE to Kick Off High-Efficiency GeneratorDevelopment Program Technology Expected of Energy (DOE) recently met with representatives of GE Power Systems and the GE Global Research Center

  17. Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects

    E-Print Network [OSTI]

    Chen, Haydn H.

    Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects X. L. Wua. A new orange-green PL band, centered at 2.25 eV, was observed with full-width at half-maximum of 0.1 e coated, the new PL band remains unchanged in peak energy but drops abruptly in intensity. Spectral

  18. Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

    SciTech Connect (OSTI)

    Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, New South Wales 2052 (Australia); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, 01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-09-30

    We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The self-assembly process is governed by the surface strain fields generated by the embedded Ge nanowires and is well-described by our theoretical calculations. The catalyst-free and horizontal growth of such Ge nanostructures directly on Si(001) is attractive for investigating exotic transport properties through Si/Ge-based quantum devices.

  19. Active magnetic refrigerants based on Gd-Si-Ge material and refrigeration apparatus and process

    DOE Patents [OSTI]

    Gschneidner, K.A. Jr.; Pecharsky, V.K.

    1998-04-28

    Active magnetic regenerator and method using Gd{sub 5} (Si{sub x}Ge{sub 1{minus}x}){sub 4}, where x is equal to or less than 0.5, as a magnetic refrigerant that exhibits a reversible ferromagnetic/antiferromagnetic or ferromagnetic-II/ferromagnetic-I first order phase transition and extraordinary magneto-thermal properties, such as a giant magnetocaloric effect, that renders the refrigerant more efficient and useful than existing magnetic refrigerants for commercialization of magnetic regenerators. The reversible first order phase transition is tunable from approximately 30 K to approximately 290 K (near room temperature) and above by compositional adjustments. The active magnetic regenerator and method can function for refrigerating, air conditioning, and liquefying low temperature cryogens with significantly improved efficiency and operating temperature range from approximately 10 K to 300 K and above. Also an active magnetic regenerator and method using Gd{sub 5} (Si{sub x} Ge{sub 1{minus}x}){sub 4}, where x is equal to or greater than 0.5, as a magnetic heater/refrigerant that exhibits a reversible ferromagnetic/paramagnetic second order phase transition with large magneto-thermal properties, such as a large magnetocaloric effect that permits the commercialization of a magnetic heat pump and/or refrigerant. This second order phase transition is tunable from approximately 280 K (near room temperature) to approximately 350 K by composition adjustments. The active magnetic regenerator and method can function for low level heating for climate control for buildings, homes and automobile, and chemical processing. 27 figs.

  20. Active magnetic refrigerants based on Gd-Si-Ge material and refrigeration apparatus and process

    DOE Patents [OSTI]

    Gschneidner, Jr., Karl A. (Ames, IA); Pecharsky, Vitalij K. (Ames, IA)

    1998-04-28

    Active magnetic regenerator and method using Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4, where x is equal to or less than 0.5, as a magnetic refrigerant that exhibits a reversible ferromagnetic/antiferromagnetic or ferromagnetic-II/ferromagnetic-I first order phase transition and extraordinary magneto-thermal properties, such as a giant magnetocaloric effect, that renders the refrigerant more efficient and useful than existing magnetic refrigerants for commercialization of magnetic regenerators. The reversible first order phase transition is tunable from approximately 30 K to approximately 290 K (near room temperature) and above by compositional adjustments. The active magnetic regenerator and method can function for refrigerating, air conditioning, and liquefying low temperature cryogens with significantly improved efficiency and operating temperature range from approximately 10 K to 300 K and above. Also an active magnetic regenerator and method using Gd.sub.5 (Si.sub.x Ge.sub.1-x).sub.4, where x is equal to or greater than 0.5, as a magnetic heater/refrigerant that exhibits a reversible ferromagnetic/paramagnetic second order phase transition with large magneto-thermal properties, such as a large magnetocaloric effect that permits the commercialization of a magnetic heat pump and/or refrigerant. This second order phase transition is tunable from approximately 280 K (near room temperature) to approximately 350 K by composition adjustments. The active magnetic regenerator and method can function for low level heating for climate control for buildings, homes and automobile, and chemical processing.

  1. TEM Study on the Evolution of Ge Nanocrystals in Si Oxide Matrix as a Function of Ge Concentration and the Si Reduction Process

    E-Print Network [OSTI]

    Chew, Han Guan

    Growth and evolution of germanium (Ge) nanocrystals embedded into a silicon oxide (SiO?) system have been studied based on the Ge content of co-sputtered Ge-SiO? films using transmission electron microscopy (TEM) and X-ray ...

  2. Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction

    SciTech Connect (OSTI)

    Mondiali, Valeria; Cecchi, Stefano; Chrastina, Daniel [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica, E-mail: monica.bollani@ifn.cnr.it [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy); Richard, Marie-Ingrid [ID01/ESRF, BP 220, F-38043 Grenoble Cedex (France); Aix-Marseille Université, CNRS, IM2NP UMR 7334, Campus de St Jérôme, F-13397 Marseille Cedex (France); Schülli, Tobias; Chahine, Gilbert [ID01/ESRF, BP 220, F-38043 Grenoble Cedex (France)

    2014-01-13

    Fast-scanning X-ray nanodiffraction microscopy is used to directly visualize the misfit dislocation network in a SiGe film deposited on a pit-patterned Si substrate at the beginning of plastic relaxation. X-ray real-space diffracted intensity maps are compared to topographic atomic force microscopy images, in which crosshatch lines can be seen. The change in intensity distribution as a function of the incidence angle shows localized variations in strain within the SiGe film. These variations, which reflect the order imposed by the substrate pattern, are attributed to the presence of both bunches of misfit dislocations and defect-free regions.

  3. Ordered Ramsey numbers David Conlon

    E-Print Network [OSTI]

    Fox, Jacob

    Ordered Ramsey numbers David Conlon Jacob Fox Choongbum Lee Benny Sudakov§ Abstract Given a labeled graph H with vertex set {1, 2, . . . , n}, the ordered Ramsey number r with vertices appearing in the same order as in H. The ordered Ramsey number of a labeled graph H is at least

  4. Automatic Linear Orders (Revised Version)

    E-Print Network [OSTI]

    Stephan, Frank

    CDMTCS Research Report Series Automatic Linear Orders and Trees (Revised Version) Bakhadyr; Automatic Linear Orders and Trees Bakhadyr Khoussainov, Sasha Rubin and Frank Stephan November 13, 2003 emphasis is on trees and linear orders. We study the relationship between automatic linear orders and trees

  5. The 6 GeV TMD Program at Jefferson Lab

    SciTech Connect (OSTI)

    Puckett, Andrew J.

    2015-01-01

    The study of the transverse momentum dependent parton distributions (TMDs) of the nucleon in semi-inclusive deep-inelastic scattering (SIDIS) has emerged as one of the major physics motivations driving the experimental program using the upgraded 11 GeV electron beam at Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF). The accelerator construction phase of the CEBAF upgrade is essentially complete and commissioning of the accelerator has begun as of April, 2014. As the new era of CEBAF operations begins, it is appropriate to review the body of published and forthcoming results on TMDs from the 6 GeV era of CEBAF operations, discuss what has been learned, and discuss the key challenges and opportunities for the 11 GeV SIDIS program of CEBAF.

  6. Effect of mixed Ge/Si cross-linking on the physical properties of amorphous Ge-Si-Te networks

    SciTech Connect (OSTI)

    Gunasekera, K.; Boolchand, P. [School of Electronics and Computing Systems, College of Engineering and Applied Science, University of Cincinnati, Cincinnati, Ohio 45221-0030 (United States); Micoulaut, M., E-mail: mmi@lptl.jussieu.fr [Laboratoire de Physique Théorique de la Matière Condensée, Université Pierre et Marie Curie, 4 Place Jussieu, F-75252 Paris Cedex 05 (France)

    2014-04-28

    Amorphous Ge{sub x}Si{sub x}Te{sub 1?2x} glasses are studied as a function of composition by a combination of experimental and theoretical methods, allowing for a full description of the network structure in relationship with physico-chemical properties. Calorimetric and thermal measurements reveal that such glasses display an anomalous behavior across a range of compositions x{sub c1}=7.5% and Ge, Si) are increased. The structural manifestation of these anomalies is understood from ?{sup 119}Sn Mössbauer spectroscopy and First Principles Molecular Dynamics at selected compositions (Ge{sub 20}Te{sub 80}, Si{sub 20}Te{sub 80}, and Ge{sub 10}Si{sub 10}Te{sub 80}). The numerical models reveal the quite different roles played by the modifier or network cross-linker Ge or Si atoms, Si being more tetrahedral in sp{sup 3} geometry, whereas Mössbauer spectroscopy shows that the nature of chemical bonding is dramatically changed around x??8%. The precise evolution of the local structure and chemical bonding ultimately allows understanding the origin of the intermediate phase in these complex tellurides.

  7. Direct Detection of sub-GeV Dark Matter with Semiconductor Targets

    E-Print Network [OSTI]

    Rouven Essig; Marivi Fernandez-Serra; Jeremy Mardon; Adrian Soto; Tomer Volansky; Tien-Tien Yu

    2015-09-04

    Dark matter in the sub-GeV mass range is a theoretically motivated but largely unexplored paradigm. Such light masses are out of reach for conventional nuclear recoil direct detection experiments, but may be detected through the small ionization signals caused by dark matter-electron scattering. Semiconductors are well-studied and are particularly promising target materials because their ${\\cal O}(1~\\rm{eV})$ band gaps allow for ionization signals from dark matter as light as a few hundred keV. Current direct detection technologies are being adapted for dark matter-electron scattering. In this paper, we provide the theoretical calculations for dark matter-electron scattering rate in semiconductors, overcoming several complications that stem from the many-body nature of the problem. We use density functional theory to numerically calculate the rates for dark matter-electron scattering in silicon and germanium, and estimate the sensitivity for upcoming experiments such as DAMIC and SuperCDMS. We find that the reach for these upcoming experiments has the potential to be orders of magnitude beyond current direct detection constraints and that sub-GeV dark matter has a sizable modulation signal. We also give the first direct detection limits on sub-GeV dark matter from its scattering off electrons in a semiconductor target (silicon) based on published results from DAMIC. We make available publicly our code, QEdark, with which we calculate our results. Our results can be used by experimental collaborations to calculate their own sensitivities based on their specific setup. The searches we propose will probe vast new regions of unexplored dark matter model and parameter space.

  8. C incorporation in epitaxial Ge1yCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D'Arcy-Gall, and J. E. Greene

    E-Print Network [OSTI]

    Gall, Daniel

    C incorporation in epitaxial Ge1ÀyCy layers grown on Ge,,001...: An ab initio study D. Gall, J. D lattice site configurations in fully coherent Ge1 yCy layers grown on Ge 001 . Calculations using strained configuration involving only one C atom per configura- tion. The bond-centered interstitial and the Ge-C split

  9. Direct band gap optical emission from Ge islands grown on relaxed Si{sub 0.5}Ge{sub 0.5}/Si (100) substrate

    SciTech Connect (OSTI)

    Aluguri, R.; Manna, S.; Ray, S. K., E-mail: physkr@phy.iitkgp.ernet.in [Department of Physics and Meteorology, Indian Institute of Technology Kharagpur, Kharagpur 721302 (India)

    2014-01-07

    Strained Ge islands have been grown on fully relaxed Si{sub 0.5}Ge{sub 0.5} substrate by pulsed laser ablation technique. The formation of strained Ge islands has been found for film with higher thickness following Stranski–Krastanov growth mechanism. The variation of strain with changing Ge layer thickness has been analyzed using Raman spectroscopy and high-resolution X-ray diffraction techniques. X-ray photoelectron spectra have shown the absence of any Si-Ge intermixing and oxidation of Ge films. A strong no-phonon photoluminescence emission from Ge islands has been observed, showing the superior optical characteristics of the islands grown on relaxed substrate.

  10. Azimuthally anisotropic emission of low-momentum direct photons in Au$+$Au collisions at $\\sqrt{s_{_{NN}}}=200$ GeV

    E-Print Network [OSTI]

    Adare, A; Aidala, C; Ajitanand, N N; Akiba, Y; Akimoto, R; Al-Bataineh, H; Alexander, J; Alfred, M; Al-Ta'ani, H; Angerami, A; Aoki, K; Apadula, N; Aramaki, Y; Asano, H; Aschenauer, E C; Atomssa, E T; Averbeck, R; Awes, T C; Azmoun, B; Babintsev, V; Bai, M; Baksay, G; Baksay, L; Bandara, N S; Bannier, B; Barish, K N; Bassalleck, B; Basye, A T; Bathe, S; Baublis, V; Baumann, C; Baumgart, S; Bazilevsky, A; Beaumier, M; Beckman, S; Belikov, S; Belmont, R; Bennett, R; Berdnikov, A; Berdnikov, Y; Bickley, A A; Blau, D S; Bok, J S; Boyle, K; Brooks, M L; Bryslawskyj, J; Buesching, H; Bumazhnov, V; Bunce, G; Butsyk, S; Camacho, C M; Campbell, S; Castera, P; Chen, C -H; Chi, C Y; Chiu, M; Choi, I J; Choi, J B; Choi, S; Choudhury, R K; Christiansen, P; Chujo, T; Chung, P; Chvala, O; Cianciolo, V; Citron, Z; Cole, B A; Connors, M; Constantin, P; Csanád, M; Csörg?, T; Dahms, T; Dairaku, S; Danchev, I; Danley, D; Das, K; Datta, A; Daugherity, M S; David, G; DeBlasio, K; Dehmelt, K; Denisov, A; Deshpande, A; Desmond, E J; Dharmawardane, K V; Dietzsch, O; Ding, L; Dion, A; Diss, P B; Do, J H; Donadelli, M; D'Orazio, L; Drapier, O; Drees, A; Drees, K A; Durham, J M; Durum, A; Dutta, D; Edwards, S; Efremenko, Y V; Ellinghaus, F; Engelmore, T; Enokizono, A; En'yo, H; Esumi, S; Eyser, K O; Fadem, B; Feege, N; Fields, D E; Finger, M; Jr., \\,; Fleuret, F; Fokin, S L; Fraenkel, Z; Frantz, J E; Franz, A; Frawley, A D; Fujiwara, K; Fukao, Y; Fusayasu, T; Gainey, K; Gal, C; Gallus, P; Garg, P; Garishvili, A; Garishvili, I; Ge, H; Giordano, F; Glenn, A; Gong, H; Gong, X; Gonin, M; Goto, Y; de Cassagnac, R Granier; Grau, N; Greene, S V; Perdekamp, M Grosse; Gunji, T; Guo, L; Gustafsson, H -Å; Hachiya, T; Haggerty, J S; Hahn, K I; Hamagaki, H; Hamblen, J; Hamilton, H F; Han, R; Han, S Y; Hanks, J; Hartouni, E P; Hasegawa, S; Haseler, T O S; Hashimoto, K; Haslum, E; Hayano, R; He, X; Heffner, M; Hemmick, T K; Hester, T; Hill, J C; Hohlmann, M; Hollis, R S; Holzmann, W; Homma, K; Hong, B; Horaguchi, T; Hori, Y; Hornback, D; Hoshino, T; Hotvedt, N; Huang, J; Huang, S; Ichihara, T; Ichimiya, R; Ide, J; Iinuma, H; Ikeda, Y; Imai, K; Imrek, J; Inaba, M; Iordanova, A; Isenhower, D; Ishihara, M; Isobe, T; Issah, M; Isupov, A; Ivanishchev, D; Jacak, B V; Javani, M; Jezghani, M; Jia, J; Jiang, X; Jin, J; Johnson, B M; Joo, K S; Jouan, D; Jumper, D S; Kajihara, F; Kametani, S; Kamihara, N; Kamin, J; Kanda, S; Kaneti, S; Kang, B H; Kang, J H; Kang, J S; Kapustinsky, J; Karatsu, K; Kasai, M; Kawall, D; Kawashima, M; Kazantsev, A V; Kempel, T; Key, J A; Khachatryan, V; Khanzadeev, A; Kijima, K M; Kim, B I; Kim, C; Kim, D H; Kim, D J; Kim, E; Kim, E -J; Kim, G W; Kim, H J; Kim, K -B; Kim, M; Kim, S H; Kim, Y -J; Kim, Y K; Kimelman, B; Kinney, E; Kiriluk, K; Kiss, Á; Kistenev, E; Kitamura, R; Klatsky, J; Kleinjan, D; Kline, P; Koblesky, T; Kochenda, L; Komatsu, Y; Komkov, B; Konno, M; Koster, J; Kotchetkov, D; Kotov, D; Kozlov, A; Král, A; Kravitz, A; Krizek, F; Kunde, G J; Kurita, K; Kurosawa, M; Kwon, Y; Kyle, G S; Lacey, R; Lai, Y S; Lajoie, J G; Lebedev, A; Lee, B; Lee, D M; Lee, J; Lee, K; Lee, K B; Lee, K S; Lee, S; Lee, S H; Lee, S R; Leitch, M J; Leite, M A L; Leitgab, M; Leitner, E; Lenzi, B; Lewis, B; Li, X; Liebing, P; Lim, S H; Levy, L A Linden; Liška, T; Litvinenko, A; Liu, H; Liu, M X; Love, B; Luechtenborg, R; Lynch, D; Maguire, C F; Makdisi, Y I; Makek, M; Malakhov, A; Malik, M D; Manion, A; Manko, V I; Mannel, E; Mao, Y; Masui, H; Masumoto, S; Matathias, F; McCumber, M; McGaughey, P L; McGlinchey, D; McKinney, C; Means, N; Meles, A; Mendoza, M; Meredith, B; Miake, Y; Mibe, T; Mignerey, A C; Mikeš, P; Miki, K; Milov, A; Mishra, D K; Mishra, M; Mitchell, J T; Miyachi, Y; Miyasaka, S; Mizuno, S; Mohanty, A K; Mohapatra, S; Montuenga, P; Moon, H J; Moon, T; Morino, Y; Morreale, A; Morrison, D P; Motschwiller, S; Moukhanova, T V; Murakami, T; Murata, J; Mwai, A; Nagae, T; Nagamiya, S; Nagashima, K; Nagle, J L; Naglis, M; Nagy, M I; Nakagawa, I; Nakagomi, H; Nakamiya, Y; Nakamura, K R; Nakamura, T; Nakano, K; Nattrass, C; Nederlof, A; Netrakanti, P K; Newby, J; Nguyen, M; Nihashi, M; Niida, T; Nishimura, S; Nouicer, R; Novak, T; Novitzky, N; Nyanin, A S; O'Brien, E; Oda, S X; Ogilvie, C A; Oka, M; Okada, K; Onuki, Y; Koop, J D Orjuela; Osborn, J D; Oskarsson, A; Ouchida, M; Ozawa, K; Pak, R; Pantuev, V; Papavassiliou, V; Park, B H; Park, I H; Park, J; Park, J S; Park, S; Park, S K; Park, W J; Pate, S F; Patel, L; Patel, M; Pei, H; Peng, J -C; Pereira, H; Perepelitsa, D V; Perera, G D N; Peresedov, V; Peressounko, D Yu; Perry, J; Petti, R; Pinkenburg, C; Pinson, R; Pisani, R P; Proissl, M; Purschke, M L; Purwar, A K; Qu, H; Rak, J; Rakotozafindrabe, A; Ramson, B J; Ravinovich, I; Read, K F; Reygers, K; Reynolds, D; Riabov, V; Riabov, Y; Richardson, E; Rinn, T; Roach, D; Roche, G; Rolnick, S D; Rosati, M; Rosen, C A; Rosendahl, S S E; Rosnet, P; Rowan, Z

    2015-01-01

    The PHENIX experiment at the Relativistic Heavy Ion Collider has measured 2nd and 3rd order Fourier coefficients of the azimuthal distributions of direct photons emitted at midrapidity in Au$+$Au collisions at $\\sqrt{s_{_{NN}}}=200$ GeV for various collision centralities. Combining two different analysis techniques, results were obtained in the transverse momentum range of $0.4GeV/$c$. At low $p_T$ the second-order coefficients, $v_2$, are similar to the ones observed in hadrons. Third order coefficients, $v_3$, are nonzero and almost independent of centrality. These new results on $v_2$ and $v_3$, combined with previously published results on yields, are compared to model calculations that provide yields and asymmetries in the same framework. Those models are challenged to explain simultaneously the observed large yield and large azimuthal anisotropies.

  11. INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS

    E-Print Network [OSTI]

    INFLUENCE OF SUBSTRATE OFF-CUT ON THE DEFECT STRUCTURE IN RELAXED GRADED Si-Ge/Si LAYERS SRIKANTH B and Engineering, University of California, Los Angeles, CA 90095. ABSTRACT Relaxed graded Si-Ge/Si layers can of these applications requires a different final Ge concentration in the graded Si-Ge layer. With increasing Ge content

  12. GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change General English or Academic English

    E-Print Network [OSTI]

    Escher, Christine

    GE & AE Extension Request Form, Version 11, Feb 2013, JC Program Change ­ General English of GE do you wish to request? 1 2 3 4 (GE sessions are 5 weeks) How many GE hours do you wish to take ______________________________________________ Date _________________ #12;GE & AE Extension Request Form, Version 11, Feb 2013, JC Please submit

  13. Right-handed neutrino production rate at T > 160 GeV

    SciTech Connect (OSTI)

    Ghisoiu, I.; Laine, M. E-mail: laine@itp.unibe.ch

    2014-12-01

    The production rate of right-handed neutrinos from a Standard Model plasma at a temperature above a hundred GeV has previously been evaluated up to NLO in Standard Model couplings (g ? 2/3) in relativistic (M ? ?T) and non-relativistic regimes (M >> ?T), and up to LO in an ultrarelativistic regime (M ?< gT). The last result necessitates an all-orders resummation of the loop expansion, accounting for multiple soft scatterings of the nearly light-like particles participating in 1 ? 2 reactions. In this paper we suggest how the regimes can be interpolated into a result applicable for any right-handed neutrino mass and at all temperatures above 160GeV. The results can also be used for determining the lepton number washout rate in models containing right-handed neutrinos. Numerical results are given in a tabulated form permitting for their incorporation into leptogenesis codes. We note that due to effects from soft Higgs bosons there is a narrow intermediate regime around (M ? g{sup 1/2}T in which our interpolation is phenomenological and a more precise study would be welcome.

  14. Price Quotes and Isotope Ordering

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Ordering Price Quotes and Isotope Ordering Isotopes produced at Los Alamos National Laboratory are saving lives, advancing cutting-edge research and keeping the U.S. safe. Isotope...

  15. Inhibitive formation of nanocavities by introduction of Si atoms in Ge nanocrystals produced by ion implantation

    SciTech Connect (OSTI)

    Cai, R. S.; Shang, L.; Liu, X. H.; Zhang, Y. J. [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Wang, Y. Q., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); College of Physics Science, Qingdao University, No. 308 Ningxia Road, Qingdao 266071 (China); Ross, G. G.; Barba, D., E-mail: yqwang@qdu.edu.cn, E-mail: barba@emt.inrs.ca [INRS-Énergie, Matériaux et Télécommunications, 1650 boulevard Lionel-Boulet, Varennes Québec J3X 1S2 (Canada)

    2014-05-28

    Germanium nanocrystals (Ge-nc) were successfully synthesized by co-implantation of Si and Ge ions into a SiO{sub 2} film thermally grown on (100) Si substrate and fused silica (pure SiO{sub 2}), respectively, followed by subsequent annealing at 1150?°C for 1?h. Transmission electron microscopy (TEM) examinations show that nanocavities only exist in the fused silica sample but not in the SiO{sub 2} film on a Si substrate. From the analysis of the high-resolution TEM images and electron energy-loss spectroscopy spectra, it is revealed that the absence of nanocavities in the SiO{sub 2} film/Si substrate is attributed to the presence of Si atoms inside the formed Ge-nc. Because the energy of Si-Ge bonds (301?kJ·mol{sup ?1}) are greater than that of Ge-Ge bonds (264?kJ·mol{sup ?1}), the introduction of the Si-Ge bonds inside the Ge-nc can inhibit the diffusion of Ge from the Ge-nc during the annealing process. However, for the fused silica sample, no crystalline Si-Ge bonds are detected within the Ge-nc, where strong Ge outdiffusion effects produce a great number of nanocavities. Our results can shed light on the formation mechanism of nanocavities and provide a good way to avoid nanocavities during the process of ion implantation.

  16. Semidefinite Relaxations of Ordering Problems

    E-Print Network [OSTI]

    2011-01-19

    Jan 19, 2011 ... use a complete description of the linear ordering polytope in small ..... for an in-

  17. Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1

    E-Print Network [OSTI]

    Li, Tim

    Tropical cyclone energy dispersion under vertical shears Xuyang Ge,1 Tim Li,1,2 and Xiaqiong Zhou1] Tropical cyclone Rossby wave energy dispersion under easterly and westerly vertical shears is investigated, and X. Zhou (2007), Tropical cyclone energy dispersion under vertical shears, Geophys. Res. Lett., 34, L

  18. The JLAB 12 GeV Energy Upgrade of CEBAF

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-12-01

    This presentation should describe the progress of the 12GeV Upgrade of CEBAF at Jefferson Lab. The status of the upgrade should be presented as well as details on the construction, procurement, installation and commissioning of the magnet and SRF components of the upgrade.

  19. Demand Response Performance of GE Hybrid Heat Pump Water Heater

    SciTech Connect (OSTI)

    Widder, Sarah H.; Parker, Graham B.; Petersen, Joseph M.; Baechler, Michael C.

    2013-07-01

    This report describes a project to evaluate and document the DR performance of HPWH as compared to ERWH for two primary types of DR events: peak curtailments and balancing reserves. The experiments were conducted with GE second-generation “Brillion”-enabled GeoSpring hybrid water heaters in the PNNL Lab Homes, with one GE GeoSpring water heater operating in “Standard” electric resistance mode to represent the baseline and one GE GeoSpring water heater operating in “Heat Pump” mode to provide the comparison to heat pump-only demand response. It is expected that “Hybrid” DR performance, which would engage both the heat pump and electric elements, could be interpolated from these two experimental extremes. Signals were sent simultaneously to the two water heaters in the side-by-side PNNL Lab Homes under highly controlled, simulated occupancy conditions. This report presents the results of the evaluation, which documents the demand-response capability of the GE GeoSpring HPWH for peak load reduction and regulation services. The sections describe the experimental protocol and test apparatus used to collect data, present the baselining procedure, discuss the results of the simulated DR events for the HPWH and ERWH, and synthesize key conclusions based on the collected data.

  20. 7-GeV Advanced Photon Source Conceptual Design Report

    SciTech Connect (OSTI)

    Not Available

    1987-04-01

    During the past decade, synchrotron radiation emitted by circulating electron beams has come into wide use as a powerful, versatile source of x-rays for probing the structure of matter and for studying various physical processes. Several synchrotron radiation facilities with different designs and characteristics are now in regular operation throughout the world, with recent additions in this country being the 0.8-GeV and 2.5-GeV rings of NSLS at Brookhaven National Laboratory. However, none of the operating facilities has been designed to use a low-emittance, high-energy stored beam, together with modern undulator devices, to produce a large number of hard x-ray beams of extremely high brilliance. This document is a proposal to the Department of Energy to construct and operate high-energy synchrotron radiation facility at Argonne National Laboratory. We have now chosen to set the design energy of this facility at 7.0 GeV, with the capability to operate at up to 7.5 GeV.

  1. Large inherent optical gain from the direct gap transition of Ge thin films

    E-Print Network [OSTI]

    Wang, Xiaoxin

    The recent demonstration of Ge-on-Si diode lasers renews the interest in the unique carrier dynamics of Ge involving both direct (?) and indirect (L) valleys. Here, we report a large inherent direct gap optical gain ...

  2. GeV electron beams from cm-scale channel guided laser wakefield accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  3. GeV electron beams from a centimeter-scale laser-driven plasma accelerator

    E-Print Network [OSTI]

    2008-01-01

    GeV electron beams from cm-scale channel guided laser wake?the generation of GeV-class electron beams using an intenseranges and high-quality electron beams with energy up to 1

  4. Beam On Target! - CEBAF Accelerator Achieves 12 GeV Commissioning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    in an experimental hall, recording the first data of the 12 GeV era. The machine sent electrons around the racetrack three times (known as "3-pass" beam), resulting in 6.11 GeV...

  5. A new physics era at 12 GeV | Jefferson Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    A new physics era at 12 GeV January 29, 2015 In several articles over the past years, we have written of progress with the CEBAF 12 GeV Upgrade Project. Since the beginning of...

  6. Commercialization potential of compositionally graded Ge - Si??x?Gex? - Si substrates for solar applications

    E-Print Network [OSTI]

    Goh, Johnathan Jian Ming

    2006-01-01

    This project considers the potential of Ge - Si??x?Gex? - Si substrates for solar applications. The use of compositionally graded substrates to achieve heterointegration across different materials platforms such as Si, Ge ...

  7. Discovery of GeV Emission tfrom the Circinus Galaxy with the...

    Office of Scientific and Technical Information (OSTI)

    Discovery of GeV Emission tfrom the Circinus Galaxy with the Fermi-Lat Citation Details In-Document Search Title: Discovery of GeV Emission tfrom the Circinus Galaxy with the...

  8. High Power Millimeter-Wave Signal Generation in Advanced SiGe and CMOS Process

    E-Print Network [OSTI]

    Lin, Hsin-Chang

    2015-01-01

    1.3 Millimeter-Wave Signal Generation 1.4 ThesisPower Millimeter-Wave Signal Generation in Advanced SiGe andPower Millimeter-Wave Signal Generation in Advanced SiGe and

  9. EA-0389: Proposed 7-GeV Advanced Photon Source, Argonne, Illinois

    Broader source: Energy.gov [DOE]

    This EA evaluates the environmental impacts of a proposal for construction and operation of a 6- to 7-GeV synchrotron radiation source known as the 7-GeV Advanced Photon Source at DOE's Argonne...

  10. Epitaxial Ge/Il-V Heterostructures : MOCVD growth, characterization, and applications

    E-Print Network [OSTI]

    Bai, Yu, Ph.D. Massachusetts Institute of Technology

    2011-01-01

    Epitaxial Ge thin films are being investigated for many important roles in next generation microelectronics. Metal-oxide-semiconductor field effect transistors (MOSFETs) utilizing Ge channels have demonstrated dramatic ...

  11. Optical Observations of Gamma-Ray Bursts: Connections to GeV...

    Office of Scientific and Technical Information (OSTI)

    Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV Jets Citation Details In-Document Search Title: Optical Observations of Gamma-Ray Bursts: Connections to GeVTeV...

  12. GE to Invest in Penn State Center to Study Natural Gas Supply...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    window) GE to Invest in Penn State Center to Study Natural Gas Supply Chains University Park, Pa. - GE announced it will invest up to 10 million in Penn State to establish a new...

  13. LIFETIME AND RADIATIVE EFFICIENCY VS DENSITY IN THE STRAIN-CONFINED ELECTRON-HOLE LIQUID IN Ge

    E-Print Network [OSTI]

    Kelso, Susan M.

    2011-01-01

    electron-hole liquid (SCEHL) in Ge. Sample CR50 was T = 1.9CONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and JohnCONFINED ELECTRON-HOLE LIQUID IN Ge Susan M. Kelso and John

  14. Send Orders of Reprints at reprints@benthamscience.net 126 Letters in Organic Chemistry, 2013, 10, 126-130

    E-Print Network [OSTI]

    Cirkva, Vladimir

    Send Orders of Reprints at reprints@benthamscience.net 126 Letters in Organic Chemistry, 2013, 10 The development of microwave ovens for the heating of food has more than 60-year old history [1] and since the first application of microwave heating in organic chemistry (Ge- dye et al., 1986) [2] the number

  15. Modern Ab Initio Approaches and Applications in Few-Nucleon Physics with A \\ge 4

    E-Print Network [OSTI]

    Winfried Leidemann; Giuseppina Orlandini

    2012-10-15

    We present an overview of the evolution of ab initio methods for few-nucleon systems with A \\ge 4, tracing the progress made that today allows precision calculations for these systems. First a succinct description of the diverse approaches is given. In order to identify analogies and differences the methods are grouped according to different formulations of the quantum mechanical many-body problem. Various significant applications from the past and present are described. We discuss the results with emphasis on the developments following the original implementations of the approaches. In particular we highlight benchmark results which represent important milestones towards setting an ever growing standard for theoretical calculations. This is relevant for meaningful comparisons with experimental data. Such comparisons may reveal whether a specific force model is appropriate for the description of nuclear dynamics.

  16. Charge Relaxation in a Single Electron Si/SiGe Double Quantum Dot

    E-Print Network [OSTI]

    K. Wang; C. Payette; Y. Dovzhenko; P. W. Deelman; J. R. Petta

    2013-04-15

    We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals the presence of a low lying excited state. We systematically measure T_1 as a function of detuning and interdot tunnel coupling and show that it is tunable over four orders of magnitude, with a maximum of 45 microseconds for our device configuration. Measured relaxation times are consistent with a phonon mediated energy relaxation process and indicate that low lying excited states may have important implications in the development of silicon spin qubits.

  17. High spin polarization in CoFeMnGe equiatomic quaternary Heusler alloy

    SciTech Connect (OSTI)

    Bainsla, Lakhan; Suresh, K. G.; Nigam, A. K.; Manivel Raja, M.; Varaprasad, B. S. D. Ch. S.; Takahashi, Y. K.; Hono, K.

    2014-11-28

    We report the structure, magnetic property, and spin polarization of CoFeMnGe equiatomic quaternary Heusler alloy. The alloy was found to crystallize in the cubic Heusler structure (prototype LiMgPdSn) with considerable amount of DO{sub 3} disorder. Thermal analysis result indicated the Curie temperature is about 750?K without any other phase transformation up to melting temperature. The magnetization value was close to that predicted by the Slater-Pauling curve. Current spin polarization of P?=?0.70?±?0.01 was deduced using point contact andreev reflection measurements. The temperature dependence of electrical resistivity has been fitted in the temperature range of 5–300?K in order to check for the half metallic behavior. Considering the high spin polarization and Curie temperature, this material appears to be promising for spintronic applications.

  18. Production and Testing Experience with the SRF Cavities for the CEBAF 12 GeV Upgrade

    SciTech Connect (OSTI)

    A. Burrill, G.K. Davis, F. Marhauser, C.E. Reece, A.V. Reilly, M. Stirbet

    2011-09-01

    The CEBAF recirculating CW electron linear accelerator at Jefferson Lab is presently undergoing a major upgrade to 12 GeV. This project includes the fabrication, preparation, and testing of 80 new 7-cell SRF cavities, followed by their incorporation into ten new cryomodules for subsequent testing and installation. In order to maximize the cavity Q over the full operable dynamic range in CEBAF (as high as 25 MV/m), the decision was taken to apply a streamlined preparation process that includes a final light temperature-controlled electropolish of the rf surface over the vendor-provided bulk BCP etch. Cavity processing work began at JLab in September 2010 and will continue through December 2011. The excellent performance results are exceeding project requirements and indicate a fabrication and preparation process that is stable and well controlled. The cavity production and performance experience to date will be summarized and lessons learned reported to the community.

  19. Parameter choices for a muon recirculating linear accelerator from 5 to 63 GeV

    SciTech Connect (OSTI)

    Berg, J. S.

    2014-06-19

    A recirculating linear accelerator (RLA) has been proposed to accelerate muons from 5 to 63 GeV for a muon collider. It should be usable both for a Higgs factory and as a stage for a higher energy collider. First, the constraints due to the beam loading are computed. Next, an expression for the longitudinal emittance growth to lowest order in the longitudinal emittance is worked out. After finding the longitudinal expression, a simplified model that describes the arcs and their approximate expression for the time of flight dependence on energy in those arcs is found. Finally, these results are used to estimate the parameters required for the RLA arcs and the linac phase.

  20. Magnetic structure of Gd[subscript 5]Ge[subscript 4

    SciTech Connect (OSTI)

    Tan, L.; Kreyssig, A.; Kim, J.W.; Goldman, A.I.; McQueeney, R.J.; Wermeille, D.; Sieve, B.; Lograsso, T.A.; Schlagel, D.L.; Budko, S.L.; Pecharsky, V.K.; Gschneidner, Jr., K.A. (Ames); (Iowa State)

    2010-07-20

    Gd{sub 5}Ge{sub 4} crystallizes in the orthorhombic space group Pnma, and orders antiferromagnetically below the Neel temperature T{sub N} {approx} 127 K. We have employed x-ray resonant magnetic scattering to elucidate the details of the magnetic structure. The magnetic unit cell is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are primarily aligned along the c axis and the c components of the magnetic moments at the three different sites are equal. The ferromagnetic Gd-rich slabs are stacked antiferromagnetically along the b direction.