Sample records for ge appliances order

  1. GE Appliances: Order (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE issued an Order after entering into a Compromise Agreement with General Electric Appliances after finding GE Appliances had failed to certify that certain models of dehumidifiers comply with the applicable energy conservation standards.

  2. GE Appliances: Order (2012-SE-1403) | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO2: FinalOffers3.pdf0-45.pdf0 Budget Fossil EnergyFull Text ManagementDOEGE Appliances: Order

  3. Modeling of GE Appliances: Final Presentation

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat; Leistritz, Sean M.; Parker, Graham B.

    2013-01-31T23:59:59.000Z

    This report is the final in a series of three reports funded by U.S. Department of Energy Office of Electricity Delivery and Energy Reliability (DOE-OE) in collaboration with GE Appliances’ through a Cooperative Research and Development Agreement (CRADA) to describe the potential of GE Appliances’ DR-enabled appliances to provide benefits to the utility grid.

  4. MC Appliance: Order (2012-CE-1508)

    Broader source: Energy.gov [DOE]

    DOE ordered CNA International Inc. d/b/a MC Appliance Corporation to pay a $8,000 civil penalty after finding MC Appliance had failed to certify that certain models of room air conditioners comply with the applicable energy conservation standards.

  5. GE Appliances: Proposed Penalty (2010-CE-2113)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that General Electric Appliances failed to certify a variety of dehumidifiers as compliant with the applicable energy conservation standards.

  6. Modeling of GE Appliances: Cost Benefit Study of Smart Appliances in Wholesale Energy, Frequency Regulation, and Spinning Reserve Markets

    SciTech Connect (OSTI)

    Fuller, Jason C.; Parker, Graham B.

    2012-12-31T23:59:59.000Z

    This report is the second in a series of three reports describing the potential of GE’s DR-enabled appliances to provide benefits to the utility grid. The first report described the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The third report will explore the technical capability of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation. In this report, a series of analytical methods were presented to estimate the potential cost benefit of smart appliances while utilizing demand response. Previous work estimated the potential technical benefit (i.e., peak reduction) of smart appliances, while this report focuses on the monetary value of that participation. The effects on wholesale energy cost and possible additional revenue available by participating in frequency regulation and spinning reserve markets were explored.

  7. Modeling of GE Appliances in GridLAB-D: Peak Demand Reduction

    SciTech Connect (OSTI)

    Fuller, Jason C.; Vyakaranam, Bharat GNVSR; Prakash Kumar, Nirupama; Leistritz, Sean M.; Parker, Graham B.

    2012-04-29T23:59:59.000Z

    The widespread adoption of demand response enabled appliances and thermostats can result in significant reduction to peak electrical demand and provide potential grid stabilization benefits. GE has developed a line of appliances that will have the capability of offering several levels of demand reduction actions based on information from the utility grid, often in the form of price. However due to a number of factors, including the number of demand response enabled appliances available at any given time, the reduction of diversity factor due to the synchronizing control signal, and the percentage of consumers who may override the utility signal, it can be difficult to predict the aggregate response of a large number of residences. The effects of these behaviors can be modeled and simulated in open-source software, GridLAB-D, including evaluation of appliance controls, improvement to current algorithms, and development of aggregate control methodologies. This report is the first in a series of three reports describing the potential of GE's demand response enabled appliances to provide benefits to the utility grid. The first report will describe the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The second and third reports will explore the potential of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation and the effects on volt-var control schemes.

  8. GE Lighting Solutions: Order (2013-SE-4901)

    Broader source: Energy.gov [DOE]

    DOE ordered General Electric Lighting Solutions, LLC to pay a $5,360 civil penalty after finding GE Lighting Solutions had manufactured and distributed in commerce in the U.S. 30 units of basic model DR4-RTFB-23B and 177 units (of which 85 units remain in inventory) of basic model DR4-RTFB-77A-002, noncompliant traffic signal modules.

  9. Detailed Modeling and Response of Demand Response Enabled Appliances

    SciTech Connect (OSTI)

    Vyakaranam, Bharat; Fuller, Jason C.

    2014-04-14T23:59:59.000Z

    Proper modeling of end use loads is very important in order to predict their behavior, and how they interact with the power system, including voltage and temperature dependencies, power system and load control functions, and the complex interactions that occur between devices in such an interconnected system. This paper develops multi-state time variant residential appliance models with demand response enabled capabilities in the GridLAB-DTM simulation environment. These models represent not only the baseline instantaneous power demand and energy consumption, but the control systems developed by GE Appliances to enable response to demand response signals and the change in behavior of the appliance in response to the signal. These DR enabled appliances are simulated to estimate their capability to reduce peak demand and energy consumption.

  10. Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on

    E-Print Network [OSTI]

    Gao, Hongjun

    Surface Science Letters Self-assembled growth of ordered Ge nanoclusters on the Si(1 1 1)-(7 Â 7-assembled growth of submonolayer Ge on the Si(1 1 1)-(7 Â 7) surface grown by solid phase epitaxy has been studied using scanning tunneling microscopy. Ordered Ge nanoclusters on the surface are formed by the deposition

  11. APPLIANCE STANDARDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del(ANL-IN-03-032)8Li (59AJ76) (See theDoctoral20ALSNewstt^APPLIANCE STANDARDS How they

  12. Arnold Schwarzenegger 2010 APPLIANCE

    E-Print Network [OSTI]

    : Appliance Efficiency Regulations, appliance standards, refrigerators, air conditioners, space heaters, water heaters, pool heaters, pool pumps, electric spas, pool pump motors, plumbing fittings, plumbing fixtures, showerheads, spray valves, faucets, tub spout diverters, water closets, urinals, ceiling fans, ceiling fan

  13. Antiferromagnetic ordering in NdAuGe compound

    SciTech Connect (OSTI)

    Bashir, A. K. H.; Tchoula Tchokonté, M. B., E-mail: mtchokonte@uwc.ac.za [Department of Physics, University of the Western Cape, Private Bag X17, Bellville 7535 (South Africa); Snyman, J. L.; Sondezi, B. M.; Strydom, A. M. [Department of Physics, University of Johannesburg, Auckland Park 2006 (South Africa)

    2014-05-07T23:59:59.000Z

    The compound NdAuGe was investigated by means of electrical resistivity, ?(T), magnetic susceptibility, ?(T), magnetization, ?(?{sub 0}H), and specific heat, C{sub p}(T), measurements. Powder X-ray diffraction studies confirm a hexagonal LiGaGe-type structure with space group P6{sub 3}mc (No. 186). ?(T) data show normal metallic behaviour and a tendency toward saturation at higher temperatures. The low temperature ?(T) data indicate a phase transition around 3.8?K. The low field dc ?(T) data show an antiferromagnetic anomaly associated with a Néel temperature at T{sub N}?=?3.7?K close to the phase transition observed in ?(T) results. At higher temperatures, ?(T) follows the paramagnetic Curie-Weiss behaviour with an effective magnetic moment ?{sub eff}=3.546(4)??{sub B} and a paramagnetic Weiss temperature of ?{sub p}=?6.1(4)?K. The value obtained for ?{sub eff} is close to the value of 3.62??{sub B} expected for the free Nd{sup 3+}-ion. ?(?{sub 0}H) shows a linear behaviour with applied field up to 3?T with an evidence of metamagnetic behaviour above 3?T. C{sub p}(T) confirms the magnetic phase transition at T{sub N}?=?3.4?K. The 4f-electron specific heat indicates a Schottky-type anomaly around 16.5?K with energy splitting ?{sub 1}=25.8(4) K and ?{sub 2}=50.7(4) K of the Nd{sup 3+}?(J?=?9/2) multiplet, that are associated with, respectively, the first and second excited states of the Nd{sup 3+}-ion.

  14. Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition J. Akola1,2

    E-Print Network [OSTI]

    Binary Alloys of Ge and Te: Order, Voids, and the Eutectic Composition J. Akola1,2 and R. O. Jones1 and amorphous structures of Ge0:15Te0:85 and GeTe alloys are characterized using combined density functional,'' and Ge atoms (fourfold coordinated) show octahedral and tetrahedral bonding angles. Cubic local

  15. Appliance Efficiency Regulations

    Broader source: Energy.gov [DOE]

    Note: The federal government has imposed and updated appliance efficiency standards through several legislative acts,* and now has standards in place or under development for 30 classes of...

  16. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    SciTech Connect (OSTI)

    Polking, Mark J.; Zheng, Haimei; Urban, Jeffrey J.; Milliron, Delia J.; Chan, Emory; Caldwell, Marissa A.; Raoux, Simone; Kisielowski, Christian F.; Ager III, Joel W.; Ramesh, Ramamoorthy; Alivisatos, A.P.

    2009-12-07T23:59:59.000Z

    Ferroelectrics and other materials that exhibit spontaneous polar ordering have demonstrated immense promise for applications ranging from non-volatile memories to microelectromechanical systems. However, experimental evidence of polar ordering and effective synthetic strategies for accessing these materials are lacking for low-dimensional nanomaterials. Here, we demonstrate the synthesis of size-controlled nanocrystals of the polar material germanium telluride (GeTe) using colloidal chemistry and provide the first direct evidence of room-temperature polar ordering in nanocrystals less than 5 nm in size using aberration-corrected transmission electron microscopy. Synchrotron x-ray diffraction and Raman studies demonstrate a sizeable polar distortion and a reversible size-dependent polar phase transition in these nanocrystals. The stability of polar ordering in solution-processible nanomaterials suggests an economical avenue to Tbit/in2-density non-volatile memory devices and other applications.

  17. On the magnetic order of Gd{sub 5}Ge{sub 3}

    SciTech Connect (OSTI)

    Cadogan, J. M. [School of Physical, Environmental and Mathematical Sciences, UNSW Canberra at the Australian Defence Force Academy, Canberra, ACT BC 2610 (Australia); Ryan, D. H., E-mail: dhryan@physics.mcgill.ca [Physics Department and Centre for the Physics of Materials, McGill University, 3600 University Street, Montreal, Quebec H3A 2T8 (Canada); Mudryk, Ya.; Pecharsky, V. K.; Gschneidner, K. A. [Ames Laboratory of the U.S. Department of Energy, Iowa State University, Ames, Iowa 50011-3020, USA and Department of Materials Science and Engineering, Iowa State University, Ames, Iowa 50011-2300 (United States)

    2014-05-07T23:59:59.000Z

    We have investigated the magnetic structure of Gd{sub 5}Ge{sub 3} by neutron powder diffraction down to 3.6?K. This compound presents three events in the heat capacity which we show are related to fundamental changes in the magnetic order. The primary antiferromagnetic ordering occurs at 82(2) K and produces a magnetic cell that is tripled with respect to the underlying orthorhombic crystal cell. The propagation vector is k{sub 1}=[0?0?1/3 ]. At 74(2) K, the magnetic order becomes “anti-C” with a propagation vector k{sub 2}?=?[1 0 0]. A third change in the magnetic order occurs at 40(2) K, and the new magnetic structure is essentially the “anti-C” structure but with the addition of a tripled magnetic component corresponding to a propagation vector k{sub 3}?=?[1/3 ?0?0].

  18. Effects of the lateral ordering of self-assembled SiGe nanoislands grown on strained Si{sub 1-x}Ge{sub x} buffer layers

    SciTech Connect (OSTI)

    Strelchuk, V. V.; Nikolenko, A. S., E-mail: nikolenko_mail@ukr.net; Lytvyn, P. M.; Kladko, V. P.; Gudymenko, A. I.; Valakh, M. Ya. [National Academy of Sciences of Ukraine, V. Lashkaryov Institute of Semiconductor Physics (Ukraine); Krasilnik, Z. F.; Lobanov, D. N.; Novikov, A. V. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)

    2012-05-15T23:59:59.000Z

    Atomic-force microscopy, micro-Raman spectroscopy, and high resolution X-ray diffraction are applied to study the spatial ordering in single layers of SiGe nanoislands grown on a strained Si{sub 1-x}Ge{sub x} buffer sublayer. It is shown that, apart from stimulating the spatial ordering of nanoislands, the introduction of a Si{sub 1-x}Ge{sub x} sublayer leads to an enhanced role for interdiffusion processes. An unusually high increase in the volume of nanoislands in the process of the epitaxy is related to the anomalously strong diffusion from the buffer sublayer into the islands that is induced by nonuniform fields of elastic strains. The anisotropy of the islands shape and spatial ordering is discussed in terms of the anisotropy of the diffusion processes in spatially nonuniform fields of elastic strains.

  19. An intelligent appliance control

    SciTech Connect (OSTI)

    Maher, C.A. Jr. [Tridelta Industries, Inc., Mentor, OH (United States)] [Tridelta Industries, Inc., Mentor, OH (United States); McMahon, G. [Pitco Frialator, Inc., Concord, NH (United States)] [Pitco Frialator, Inc., Concord, NH (United States)

    1998-05-01T23:59:59.000Z

    This paper describes the use of a microcontroller to implement an adaptive form of an ON/OFF-type control system. The principal benefits that this technique offers are the ability to self adjust automatically to the dynamics of the appliance being controlled and to minimize the cyclic wear and tear on the final heat-control elements. This technique is best applied to those systems with at least one large energy storage element (e.g., thermal mass), not needing fine control of the controlled variable, and ones using ON/OFF (relay type) rather than continuous final control outputs. This profile encompasses a large number of potential applications, particularly in the appliance field.

  20. Energy Efficiency Standards for Appliances

    Broader source: Energy.gov [DOE]

    '' Note: The federal government has imposed and updated appliance efficiency standards through several legislative acts,* and now has standards in place or under development for 30 classes of...

  1. Appliance and Equipment Efficiency Standards

    Broader source: Energy.gov [DOE]

    '' Note: The federal government has imposed and updated appliance efficiency standards through several legislative acts,* and now has standards in place or under development for 30 classes of...

  2. Streamlining ENERGY STAR Appliance Testing

    Broader source: Energy.gov [DOE]

    To save taxpayer dollars and help lower the costs of innovative energy-efficient technologies, the Energy Department is streamlining ENERGY STAR testing for appliances.

  3. Appliance and Equipment Standards

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The Future of1Albuquerque,APPENDIX A: Technical Support DocumentAppliance and

  4. Appliances, Lighting, Electronics, and Miscellaneous Equipment Electricity Use in New Homes

    E-Print Network [OSTI]

    Brown, Richard E.; Rittelman, William; Parker, Danny; Homan, Gregory

    2007-01-01T23:59:59.000Z

    62440 Appliances, Lighting, Electronics, and Miscellaneousof California. Appliances, Lighting, Electronics, anduses (appliances, lighting, electronics, and miscellaneous

  5. Remote repair appliance

    DOE Patents [OSTI]

    Heumann, F.K.; Wilkinson, J.C.; Wooding, D.R.

    1997-12-16T23:59:59.000Z

    A remote appliance for supporting a tool for performing work at a work site on a substantially circular bore of a work piece and for providing video signals of the work site to a remote monitor comprises: a base plate having an inner face and an outer face; a plurality of rollers, wherein each roller is rotatably and adjustably attached to the inner face of the base plate and positioned to roll against the bore of the work piece when the base plate is positioned against the mouth of the bore such that the appliance may be rotated about the bore in a plane substantially parallel to the base plate; a tool holding means for supporting the tool, the tool holding means being adjustably attached to the outer face of the base plate such that the working end of the tool is positioned on the inner face side of the base plate; a camera for providing video signals of the work site to the remote monitor; and a camera holding means for supporting the camera on the inner face side of the base plate, the camera holding means being adjustably attached to the outer face of the base plate. In a preferred embodiment, roller guards are provided to protect the rollers from debris and a bore guard is provided to protect the bore from wear by the rollers and damage from debris. 5 figs.

  6. Remote repair appliance

    DOE Patents [OSTI]

    Heumann, Frederick K. (Ballston Spa, NY); Wilkinson, Jay C. (Ballston Spa, NY); Wooding, David R. (Saratoga Springs, NY)

    1997-01-01T23:59:59.000Z

    A remote appliance for supporting a tool for performing work at a worksite on a substantially circular bore of a workpiece and for providing video signals of the worksite to a remote monitor comprising: a baseplate having an inner face and an outer face; a plurality of rollers, wherein each roller is rotatably and adjustably attached to the inner face of the baseplate and positioned to roll against the bore of the workpiece when the baseplate is positioned against the mouth of the bore such that the appliance may be rotated about the bore in a plane substantially parallel to the baseplate; a tool holding means for supporting the tool, the tool holding means being adjustably attached to the outer face of the baseplate such that the working end of the tool is positioned on the inner face side of the baseplate; a camera for providing video signals of the worksite to the remote monitor; and a camera holding means for supporting the camera on the inner face side of the baseplate, the camera holding means being adjustably attached to the outer face of the baseplate. In a preferred embodiment, roller guards are provided to protect the rollers from debris and a bore guard is provided to protect the bore from wear by the rollers and damage from debris.

  7. Energy Star Appliances 1 Texas A&M AgriLife Extension Service ENERGY STAR Appliances

    E-Print Network [OSTI]

    Energy Star® Appliances 1 Texas A&M AgriLife Extension Service ENERGY STAR® Appliances ENERGY STAR®-labeled appliances save you money by using less electricity and water than other appliances. Better appliance energy efficiency comes from quality materials and technologically advanced materials. Although energy efficient

  8. Incorporating Experience Curves in Appliance Standards Analysis

    E-Print Network [OSTI]

    Desroches, Louis-Benoit

    2012-01-01T23:59:59.000Z

    appliance price projections than the assumption-basedrepresentative projection of future prices than the constant

  9. Ca{sub 2}Pd{sub 3}Ge, a new fully ordered ternary Laves phase structure

    SciTech Connect (OSTI)

    Doverbratt, Isa, E-mail: isa.doverbratt@polymat.lth.se [Centre for Analysis and Synthesis, Lund University, P.O. Box 124, 22100 Lund (Sweden); Ponou, Simeon; Lidin, Sven [Centre for Analysis and Synthesis, Lund University, P.O. Box 124, 22100 Lund (Sweden)

    2013-01-15T23:59:59.000Z

    The title compound, Ca{sub 2}Pd{sub 3}Ge, was prepared as a part of a systematic investigation of the Ca-Pd-Ge ternary phase diagram. The structure was determined and refined from single-crystal X-ray diffraction data. It is a new fully ordered ternary Laves phase with the space group R-3m, Z=3, a=5.6191 (5) A, c=12.1674 (7) A, wR{sub 2}=0.054 (all data) and is isostructural to Mg{sub 2}Ni{sub 3}Si (Noreus et al., 1985 [17]) but due to the larger size of all elements in Ca{sub 2}Pd{sub 3}Ge, the cell axes are approximately 10% longer. The compound may formally be considered as a Zintl compound, with [Pd{sub 3}Ge]{sup 4-} forming a poly-anionic network and divalent Ca cations located in truncated tetrahedral interstices. The electronic structure and chemical bonding of Ca{sub 2}Pd{sub 3}Ge is discussed in terms of LMTO band structure calculations and compared with CaPd{sub 2} (MgCu{sub 2}-type). - Graphical abstract: The title compound, Ca{sub 2}Pd{sub 3}Ge is a new fully ordered ternary Laves phase which may formally be considered as a Zintl compound, with [Pd{sub 3}Ge]{sup 4-} forming a poly-anionic network and divalent Ca cations located in truncated tetrahedral interstices. The structure is composed of Kagome net layers, consisting of Pd atoms only, which are stacked in an ABC sequence. Band structure calculations show that the Fermi level is located at a local minimum of the DOS (pseudo-gap) indicating that the charge is roughly optimized in the structure. Highlights: Black-Right-Pointing-Pointer Site specific segregation in a Laves phase that is also a Zintl phase. Black-Right-Pointing-Pointer Pseudo-gap at the Fermi level in a Laves phase. Black-Right-Pointing-Pointer Distorted Frank-Kasper polyhedron.

  10. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    DC Conversion Loss Savings of Appliances Running on DirectConversion Loss Savings of Appliances Running on Direct DCrunning on AC and, in column B, the avoided AC-DC conversions losses

  11. Appliance Standards and Rulemaking Federal Advisory Committee...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Issuance Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC) - Central Air Conditioner Regional Standards Enforcement Working Group; Notice of Open...

  12. Appliance Standards and Rulemaking Federal Advisory Committee...

    Energy Savers [EERE]

    of the National Energy Laboratories Buildings Home About Emerging Technologies Residential Buildings Commercial Buildings Appliance & Equipment Standards Building Energy Codes...

  13. Appliances, Lighting, Electronics, and Miscellaneous Equipment Electricity Use in New Homes

    E-Print Network [OSTI]

    Brown, Richard E.; Rittelman, William; Parker, Danny; Homan, Gregory

    2007-01-01T23:59:59.000Z

    62440 Appliances, Lighting, Electronics, and MiscellaneousAppliances, Lighting, Electronics, and Miscellaneoususes (appliances, lighting, electronics, and miscellaneous

  14. High-temperature order-disorder transitions in the skutterudites CoGe{sub 1.5}Q{sub 1.5} (Q=S, Te)

    SciTech Connect (OSTI)

    Kaltzoglou, Andreas; Powell, Anthony V. [Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery (CAESAR), Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)] [Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery (CAESAR), Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Knight, Kevin S. [ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0OX (United Kingdom)] [ISIS Facility, Rutherford Appleton Laboratory, Didcot, Oxfordshire OX11 0OX (United Kingdom); Vaqueiro, Paz, E-mail: chepv@hw.ac.uk [Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery (CAESAR), Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)] [Institute of Chemical Sciences and Centre for Advanced Energy Storage and Recovery (CAESAR), Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom)

    2013-02-15T23:59:59.000Z

    The temperature dependence of anion ordering in the skutterudites CoGe{sub 1.5}Q{sub 1.5} (Q=S, Te) has been investigated by powder neutron diffraction. Both materials adopt a rhombohedral structure at room temperature (space group R3{sup Macron} ) in which the anions are ordered trans to each other within Ge{sub 2}Q{sub 2} rings. In CoGe{sub 1.5}S{sub 1.5}, anion ordering is preserved up to the melting point of 950 Degree-Sign C. However, rhombohedral CoGe{sub 1.5}Te{sub 1.5} undergoes a phase transition at 610 Degree-Sign C involving a change to cubic symmetry (space group Im3{sup Macron }). In the high-temperature modification, there is a statistical distribution of anions over the available sites within the Ge{sub 2}Te{sub 2} rings. The structural transition involves a reduction in the degree of distortion of the Ge{sub 2}Te{sub 2} rings which progressively transform from a rhombus to a rectangular shape. The effect of this transition on the thermoelectric properties has been investigated. - Graphical abstract: Powder neutron diffraction reveals that the skutterudite CoGe{sub 1.5}Te{sub 1.5} undergoes a phase transition at 610 Degree-Sign C, involving the disordering of the anions within the Ge{sub 2}Te{sub 2} rings. Highlights: Black-Right-Pointing-Pointer CoGe{sub 1.5}S{sub 1.5} retains an ordered skutterudite structure up to 950 Degree-Sign C. Black-Right-Pointing-Pointer CoGe{sub 1.5}Te{sub 1.5} undergoes an order-disorder phase transition at 610 Degree-Sign C. Black-Right-Pointing-Pointer Below 610 Degree-Sign C, anions are arranged trans to each other within Ge{sub 2}Te{sub 2} rings. Black-Right-Pointing-Pointer Above 610 Degree-Sign C, anions are statistically distributed within the Ge{sub 2}Te{sub 2} rings. Black-Right-Pointing-Pointer The effect of the phase transition on the thermal conductivity is discussed.

  15. Distinctive Appliances: Proposed Penalty (2014-CE-23020)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Distinctive Appliances Distributing Inc. failed to certify cooking products as compliant with the applicable energy conservation standards.

  16. Smart Domestic Appliances Provide Flexibility for Sustainable...

    Open Energy Info (EERE)

    benefits and difficulties associated with smart grid appliances. The presenter discusses demand response and load management and how users of smart grid can benefit renewable...

  17. Appliance and Equipment Energy Efficiency Standards

    Broader source: Energy.gov [DOE]

    '' Note: The federal government has imposed and updated appliance efficiency standards through several legislative acts,* and now has standards in place or under development for 30 classes of...

  18. Earthjustice, Appliance Standards Awareness Project, Natural...

    Energy Savers [EERE]

    Council - Comments in response to DOE solicitation of views on the implementation of test procedure waivers for large capacity clothes washers Earthjustice, Appliance Standards...

  19. Appliance remanufacturing and life cycle energy and economic savings

    E-Print Network [OSTI]

    Boustani, Avid

    In this paper we evaluate the energy and economic consequences of appliance remanufacturing relative to purchasing new. The appliances presented in this report constitute major residential appliances: refrigerator, dishwasher, ...

  20. State Energy Efficient Appliance Rebate Program (SEEARP) American...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State Energy Efficient Appliance Rebate Program (SEEARP) American Recovery and Reinvestment Act (ARRA) Funding Opportunity Number: DE-FOA-0000119 State Energy Efficient Appliance...

  1. Sales Tax Holiday for Energy-Efficient Appliances

    Broader source: Energy.gov [DOE]

    In November 2007, Maryland enacted legislation creating a sales and use tax "holiday" for certain energy-efficient appliances, beginning in 2011. Under the law, qualifying appliances purchased...

  2. Secretary Chu Announces More Stringent Appliance Standards for...

    Energy Savers [EERE]

    Secretary Chu Announces More Stringent Appliance Standards for Home Water Heaters and Other Heating Products Secretary Chu Announces More Stringent Appliance Standards for Home...

  3. Four-County EMC- Residential Energy Efficiency Appliance Rebate Program

    Broader source: Energy.gov [DOE]

    Four-County EMC offers its customers $50 rebates for purchasing certain Energy Star appliances. Eligible appliances include refrigerators, dishwashers, clothes washers and freezers. The rebates are...

  4. APPLIANCE EFFICIENCY REGULATIONS FOR REFRIGERATORS AND FREEZERS

    E-Print Network [OSTI]

    CENTRAL AIR CONDITIONERS GAS SPACE HEATERS WATER HEATERS PLUMBING FITTINGS FLUORESCENT LAMP BALLASTS LUMINAIRES GAS COOKING APPLIANCES AND GAS POOL HEATERS SEPTEMBER 1992 #12;TABLE OF CONTENTS APPLIANCE) Gas space heaters, excluding the following types: (1) gravity type central furnaces; (2) heaters

  5. Retrospective Evaluation of Appliance Price Trends

    SciTech Connect (OSTI)

    Dale, Larry; Antinori, Camille; McNeil, Michael; McMahon, James E.; Fujita, K. Sydny

    2008-07-20T23:59:59.000Z

    Real prices of major appliances (refrigerators, dishwashers, heating and cooling equipment) have been falling since the late 1970s despite increases in appliance efficiency and other quality variables. This paper demonstrates that historic increases in efficiency over time, including those resulting from minimum efficiency standards, incur smaller price increases than were expected by Department of Energy (DOE) forecasts made in conjunction with standards. This effect can be explained by technological innovation, which lowers the cost of efficiency, and by market changes contributing to lower markups and economies of scale in production of higher efficiency units. We reach four principal conclusions about appliance trends and retail price setting: 1. For the past several decades, the retail price of appliances has been steadily falling while efficiency has been increasing. 2. Past retail price predictions made by DOE analyses of efficiency standards, assuming constant prices over time, have tended to overestimate retail prices. 3. The average incremental price to increase appliance efficiency has declined over time. DOE technical support documents have typically overestimated this incremental price and retail prices. 4. Changes in retail markups and economies of scale in production of more efficient appliances may have contributed to declines in prices of efficient appliances.

  6. West Virginia Consumers Have Appliance Rebate 'Trifecta'

    Broader source: Energy.gov [DOE]

    West Virginians didn’t waste any time in taking advantage of the Energy Efficient Appliance Rebate Program. Only three months in, and almost half of the available $1.7 million is already spoken for.

  7. Catalog of DC Appliances and Power Systems

    E-Print Network [OSTI]

    Garbesi, Karina

    2012-01-01T23:59:59.000Z

    main conclusions about off-grid markets for DC appliances,and power systems. Mature Off-Grid Markets for DC Appliancesapplications include off-grid residential, telecom, remote

  8. 2009 CALIFORNIA RESIDENTIAL APPLIANCE SATURATION STUDY

    E-Print Network [OSTI]

    data, household energy consumption data and weather information to calculate average annual information on appliances, equipment, and general consumption patterns. Data collection was completed in early 2010. The study yielded energy consumption estimates for 27 electric and 10 natural gas

  9. Equator Appliance: ENERGY STAR Referral (EZ 3720)

    Broader source: Energy.gov [DOE]

    DOE referred Equator Appliance clothes washer EZ 3720 to EPA, brand manager of the ENERGY STAR program, for appropriate action after DOE testing revealed that the model does not meet ENERGY STAR requirements.

  10. Energy-Efficient Appliance Manufacturing Tax Credit

    Broader source: Energy.gov [DOE]

    '''''Note: This tax credit expired at the end of 2011. The American Taxpayer Relief Act of 2012 retroactively renewed this tax credit for certain appliances manufactured in 2012 and 2013. '''''

  11. MC Appliance: Proposed Penalty (2014-CE-20002)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that MC Appliance Corporation failed to certify residential clothes washers and residential clothes dryers as compliant with the applicable energy conservation standards.

  12. Pollutant Emission Factors from Residential Natural Gas Appliances: A Literature Review

    E-Print Network [OSTI]

    Traynor, G.W.

    2011-01-01T23:59:59.000Z

    distributions from residential natural gas appliances. CH 4ng/J) distribution from residential natural gas appliances.from Residential Natural Gas Appliances: A Literature Review

  13. Impact of Natural Gas Appliances on Pollutant Levels in California Homes

    E-Print Network [OSTI]

    Mullen, Nasim A.

    2014-01-01T23:59:59.000Z

    35): 5661-67. Impact of Natural Gas Appliances on PollutantO-. ! Natural Gas Appliances on PollutantA! =? >7! =::! Impact of Natural Gas Appliances on Pollutant

  14. State Appliance Standards (released in AEO2009)

    Reports and Publications (EIA)

    2009-01-01T23:59:59.000Z

    State appliance standards have existed for decades, starting with Californias enforcement of minimum efficiency requirements for refrigerators and several other products in 1979. In 1987, recognizing that different efficiency standards for the same products in different states could create problems for manufacturers, Congress enacted the National Appliance Energy Conservation Act (NAECA), which initially covered 12 products. The Energy Policy Act of 1992 (EPACT92), EPACT2005, and EISA2007 added additional residential and commercial products to the 12 products originally specified under NAECA.

  15. Non-intrusive appliance monitor apparatus

    DOE Patents [OSTI]

    Hart, George W. (Natick, MA); Kern, Jr., Edward C. (Lincoln, MA); Schweppe, Fred C. (Carlisle, MA)

    1989-08-15T23:59:59.000Z

    A non-intrusive monitor of energy consumption of residential appliances is described in which sensors, coupled to the power circuits entering a residence, supply analog voltage and current signals which are converted to digital format and processed to detect changes in certain residential load parameters, i.e., admittance. Cluster analysis techniques are employed to group change measurements into certain categories, and logic is applied to identify individual appliances and the energy consumed by each.

  16. Non-intrusive appliance monitor apparatus

    DOE Patents [OSTI]

    Hart, G.W.; Kern, E.C. Jr.; Schweppe, F.C.

    1989-08-15T23:59:59.000Z

    A non-intrusive monitor of energy consumption of residential appliances is described in which sensors, coupled to the power circuits entering a residence, supply analog voltage and current signals which are converted to digital format and processed to detect changes in certain residential load parameters, i.e., admittance. Cluster analysis techniques are employed to group change measurements into certain categories, and logic is applied to identify individual appliances and the energy consumed by each. 9 figs.

  17. Predicting Backdrafting and Spillage for Natural-Draft Gas Combustion Appliances: Validating VENT-II

    E-Print Network [OSTI]

    Rapp, Vi H.

    2014-01-01T23:59:59.000Z

    and Spillage for Natural-Draft Gas Combustion Appliances:and Spillage for Natural-Draft Gas Combustion Appliances: A

  18. Energy Efficient Appliance Sales Soar in North Carolina | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Energy Efficient Appliance Sales Soar in North Carolina Energy Efficient Appliance Sales Soar in North Carolina July 23, 2010 - 11:00am Addthis Joshua DeLung What does this mean...

  19. Reading Municipal Light Department- Residential ENERGY STAR Appliance Rebate Program

    Broader source: Energy.gov [DOE]

    Reading Municipal Light Department (RMLD) offers rebates to residential customers who install Energy Star appliances in eligible homes. The offer is limited to one rebate per appliance or a maximum...

  20. 2012 APPLIANCE EFFICIENCY REGULATIONS Edmund G. Brown Jr., Governor

    E-Print Network [OSTI]

    : Appliance Efficiency Regulations, appliance standards, refrigerators, air conditioners, space heaters, water heaters, pool heaters, pool pumps, electric spas, pool pump motors, plumbing fittings, plumbing fixtures, showerheads, spray valves, faucets, tub spout diverters, water closets, urinals, ceiling fans, ceiling fan

  1. Material World: Forecasting Household Appliance Ownership in a Growing Global Economy

    SciTech Connect (OSTI)

    Letschert, Virginie; McNeil, Michael A.

    2009-03-23T23:59:59.000Z

    Over the past years the Lawrence Berkeley National Laboratory (LBNL) has developed an econometric model that predicts appliance ownership at the household level based on macroeconomic variables such as household income (corrected for purchase power parity), electrification, urbanization and climate variables. Hundreds of data points from around the world were collected in order to understand trends in acquisition of new appliances by households, especially in developing countries. The appliances covered by this model are refrigerators, lighting fixtures, air conditioners, washing machines and televisions. The approach followed allows the modeler to construct a bottom-up analysis based at the end use and the household level. It captures the appliance uptake and the saturation effect which will affect the energy demand growth in the residential sector. With this approach, the modeler can also account for stock changes in technology and efficiency as a function of time. This serves two important functions with regard to evaluation of the impact of energy efficiency policies. First, it provides insight into which end uses will be responsible for the largest share of demand growth, and therefore should be policy priorities. Second, it provides a characterization of the rate at which policies affecting new equipment penetrate the appliance stock. Over the past 3 years, this method has been used to support the development of energy demand forecasts at the country, region or global level.

  2. 2014-08-19 Issuance Appliance Standards and Rulemaking Federal...

    Energy Savers [EERE]

    Issuance Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC) - Central Air Conditioner Regional Standards Enforcement Working Group; Notice of Open...

  3. Low-cost Appliance State Sensing for Energy Disaggregation

    E-Print Network [OSTI]

    Wu, Tianji

    2012-01-01T23:59:59.000Z

    and Steven B. Leeb. “Non-intrusive electrical load monitor-in recent years, namely non-intrusive appliance load

  4. Assessment of Literature Related to Combustion Appliance Venting

    E-Print Network [OSTI]

    1 Assessment of Literature Related to Combustion Appliance Venting Systems V.H. Rapp, B.C. Singer., Assessment of Literature Related to Combustion Appliance Venting Systems. LBNL-5798E 3 ABSTRACT In many by concerns about related impacts on the safety of naturally vented combustion appliances. Tighter housing

  5. BSH: Order (2013-CE-2001)

    Broader source: Energy.gov [DOE]

    DOE ordered BSH Home Appliances Corp. to pay a $8,000 civil penalty after finding BSH had failed to certify that certain models of residential clothes washers comply with the applicable energy/water conservation standards.

  6. Results of the Grid Friendly Appliance Project

    SciTech Connect (OSTI)

    Hammerstrom, Donald J.

    2010-04-14T23:59:59.000Z

    As part of the Pacific Northwest GridWise™ Testbed Demonstration funded by the U.S. Department of Energy and others, Pacific Northwest National Laboratory (PNNL) collaborated with Whirlpool Corporation, Invensys Controls, the Bonneville Power Administration, PacifiCorp, Portland General Electric and several smaller utilities to install 150 new Sears Kenmore clothes dryers and to retrofit 50 existing electric water heaters in homes in Washington and Oregon. Each dryer and water heater was configured to respond to the Grid Friendly™ appliance controller, a small electronic circuit that sensed underfrequency grid conditions and requested that electric load be shed by the appliances. These controllers and appliances were observed for over a year in residences spread over a wide geographic area. The controllers were found to respond predictably and reliably despite their geographic separation. Over 350 minor underfrequency events were observed during the experiment. This paper presents the distributions of these events by season and by time of day. Based on measured load profiles for the dryers and water heaters, the average electrical load that can be shed by each of the two appliance types was estimated by time of day and by season. Battelle Memorial Institute and PNNL have been assembling a suite of grid-responsive functions and benefits that can be achieved through the control of relatively small, distributed loads and resources on a power grid. These controllers should eventually receive acceptance for the opportunities they offer for circuit protection, regulation services, facilitation of demand responsiveness, and even power quality.

  7. Local order measurement in SnGe alloys and monolayer Sn films on Si with reflection electron energy loss spectrometry

    E-Print Network [OSTI]

    Atwater, Harry

    fine structure EXELFS data obtained by reflection electron energy loss spectrometry REELS-range order obtained using reflection high energy electron diffraction. The results suggest that EXELFS synthesis of artificial structures with abrupt strain and composition profiles. Re- flection high energy

  8. UV nanoimprint lithography for the realization of large-area ordered SiGe/Si(001) island arrays

    SciTech Connect (OSTI)

    Lausecker, E.; Brehm, M.; Grydlik, M.; Hackl, F.; Fromherz, T.; Schaeffler, F.; Bauer, G. [Institute of Semiconductor and Solid State Physics, Johannes Kepler University Linz, 4040 Linz (Austria); Bergmair, I.; Muehlberger, M. [Functional Surfaces and Nanostructures, Profactor GmbH, 4407 Steyr-Gleink (Austria)

    2011-04-04T23:59:59.000Z

    We use UV nanoimprint lithography for the pit-patterning of silicon substrates. Ordered silicon-germanium islands are grown inside these pits by molecular-beam epitaxy on arrays of 3x3 mm{sup 2} and characterized by atomic force microscopy (AFM) and photoluminescence (PL) measurements. AFM-based statistics reveals an extremely uniform size distribution of the islands in the patterned areas. These results are confirmed by very narrow and uniform PL peaks recorded at various positions across the patterned arrays.

  9. Appliances & Electronics | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE: Alternative Fuels Data Center HomeIdle ReductionOfficesActive SolarAnnualAppliances &

  10. ORDER

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn'tOrigin of Contamination in ManyDepartment of Order No.of Energy OPCOPSAID| Department

  11. ORDER

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for Renewable Energy:Nanowire3627 FederalTransformers |OJT!LSU/CAMD ProcedureNA LtheORDER

  12. Hydrophilic structures for condensation management in refrigerator appliances

    DOE Patents [OSTI]

    Kuehl, Steven John; Vonderhaar, John J; Wu, Guolian; Wu, Mianxue

    2014-10-21T23:59:59.000Z

    A refrigerator appliance that includes a freezer compartment having a freezer compartment door, and a refrigeration compartment having at least one refrigeration compartment door. The appliance further includes a mullion with an exterior surface. The mullion divides the compartments and the exterior surface directs condensation toward a transfer point. The appliance may also include a cabinet that houses the compartments and has two sides, each with an exterior surface. Further, at least one exterior surface directs condensation toward a transfer point.

  13. Measure Guideline: Combustion Safety for Natural Draft Appliances Through Appliance Zone Isolation

    SciTech Connect (OSTI)

    Fitzgerald, J.; Bohac, D.

    2014-04-01T23:59:59.000Z

    This measure guideline covers how to assess and carry out the isolation of natural draft combustion appliances from the conditioned space of low-rise residential buildings. It deals with combustion appliances located either within the living space in enclosed closets or side rooms or outside the living space in an adjacent area like an attic or garage. This subset of houses does not require comprehensive combustion safety tests and simplified prescriptive procedures can be used to address safety concerns. This allows residential energy retrofit contractors inexperienced in advanced combustion safety testing to effectively address combustion safety issues and allow energy retrofits including tightening and changes to distribution and ventilation systems to proceed.

  14. appliances current situation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for copies of this document are available from: Public Reference Action Final Rule 66 Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring...

  15. appliance ownership survey: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    day's events and weather. The system stores information on the user Takahashi, Shin 87 Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring...

  16. appliance labeling rule: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    day's events and weather. The system stores information on the user Takahashi, Shin 54 Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring...

  17. appliances maeleudstyr og: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    day's events and weather. The system stores information on the user Takahashi, Shin 129 Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring...

  18. appliance markettransformation program: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    day's events and weather. The system stores information on the user Takahashi, Shin 42 Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring...

  19. ISSUANCE 2015-06-30: Appliance Standards and Rulemaking Federal...

    Energy Savers [EERE]

    Standards and Rulemaking Federal Advisory Committee: Notice of Intent to Establish the Central Air Conditioners and Heat Pumps Working Group ISSUANCE 2015-06-30: Appliance...

  20. HVAC, Water Heating, and Appliances Overview - 2015 BTO Peer...

    Office of Environmental Management (EM)

    HVAC, Water Heater and Appliance R&D - 2014 BTO Peer Review Research & Development Roadmap: Emerging HVAC Technologies This thermoelastic system provides a promising...

  1. appliance efficiency program: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    of California eScholarship Repository Summary: 2002. Commercial Cooking Appliance Technology Assessment.technology costs reported in Table 1 are not included in these plots...

  2. Appliance Standards Program Schedule - CCE Overview and Update...

    Broader source: Energy.gov (indexed) [DOE]

    Meeting CCE Overview and Update Presenation, dated April 13, 2011 NEMA Distribution Transformers, CCE Overview and Update presentation, dated 05242011 Appliance Standards Program...

  3. Orange and Rockland Utilities (Electric)- Residential Appliance Recycling Program

    Broader source: Energy.gov [DOE]

    Orange and Rockland Utilities provides rebates for residential customers for recycling older, inefficient refrigerators and freezers. All appliances must meet the program requirements listed on the...

  4. appliances walking sticks: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    themselves and adolescents, children and adolescents have not provided any substantial data. (more) Walton, Daniel K. 2010-01-01 23 Appliance remanufacturing and life cycle...

  5. Kitchen Appliance Upgrades Improve Water Efficiency at DOD Exchange...

    Broader source: Energy.gov (indexed) [DOE]

    Kitchen Appliance Upgrades Improve Water Efficiency at DOD Exchange Facilities Case study details the U.S. Department of Defense (DOD) Exchange (formerly the Army and Air Force...

  6. Webinar: Appliance Standards and Rulemaking Federal Advisory Committee

    Broader source: Energy.gov [DOE]

    DOE is conducting a public meeting and webinar regarding the Appliance Standards and Rulemaking Federal Advisory Committee (ASRAC). For more information, please visit the ASRAC page. 

  7. State Energy Efficient Appliance Rebate Program (SEEARP) reports...

    Open Energy Info (EERE)

    The successes and challenges of SEEARP provide valuable lessons for designing and running a consumer-focused appliance rebate program. In addition to the SEEARP reports...

  8. BSH Home Appliances: Proposed Penalty (2014-CE-23013)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that BSH Home Appliances Corporation failed to certify cooking products as compliant with the applicable energy conservation standards.

  9. T-588: HP Virtual SAN Appliance Stack Overflow

    Broader source: Energy.gov [DOE]

    A vulnerability has been reported in HP StorageWorks P4000 Virtual SAN Appliance Software, which can be exploited by malicious people to compromise a vulnerable system.

  10. Microwave vs. Electric Kettle: Which Appliance Is in Hot Water...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    is more efficient? Tell Us Addthis Microwave or electric kettle, which appliance should win the honor of heating your water? | Graphic by Stacy Buchanan, National Renewable Energy...

  11. Buying an Appliance this Holiday Season? ENERGY STAR Products...

    Office of Environmental Management (EM)

    Freezers Room air conditioners Televisions Clothes washers Dishwashers Battery chargers Water heaters Fluorescent lamp ballasts Incandescent reflector lamps If your appliance has...

  12. Distinctive Appliances: Order (2014-CE-23020) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197E T ADRAFT ENVIRONMENTALCombustion4-CE-23020) Distinctive

  13. Distinctive Appliances: Order (2015-CE-14019) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny:Revised Finding of No53197E T ADRAFT ENVIRONMENTALCombustion4-CE-23020)

  14. BSH Home Appliances: Order (2014-CE-23013) | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels DataDepartment of Energy Your Density Isn't Your Destiny: The FutureComments fromof EnergyBILIWG: ConsistentofDepartment ofDr. DoonBSH

  15. 9th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Office of Environmental Management (EM)

    to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 9th Semi-Annual Report to Congress on Appliance Energy...

  16. 3rd Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 3rd Semi-Annual Report to Congress on Appliance...

  17. 17TH SEMI-ANNUAL REPORT TO CONGRESS ON APPLIANCE ENERGY EFFICIENCY...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    TO CONGRESS ON APPLIANCE ENERGY EFFICIENCY RULEMAKINGS - IMPLEMENTATION REPORT: ENERGY CONSERVATION STANDARDS ACTIVITIES 17TH SEMI-ANNUAL REPORT TO CONGRESS ON APPLIANCE ENERGY...

  18. 16th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Office of Environmental Management (EM)

    to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 16th Semi-Annual Report to Congress on Appliance Energy...

  19. 5th Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 5th Semi-Annual Report to Congress on Appliance...

  20. 7th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Office of Environmental Management (EM)

    to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities 7th Semi-Annual Report to Congress on Appliance Energy...

  1. 14th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    to Congress on Appliance Energy Efficiency Rulemakings Implementation Report: Energy Conservation Standards Activities 14th Semi-Annual Report to Congress on Appliance Energy...

  2. Predicting Backdrafting and Spillage for Natural-Draft Gas Combustion Appliances: Validating VENT-II

    E-Print Network [OSTI]

    Rapp, Vi H.

    2014-01-01T23:59:59.000Z

    for Natural-Draft Gas Combustion Appliances: Validatingfor Natural-Draft Gas Combustion Appliances: A Validation ofs ability to predict combustion gas spillage events due to

  3. Data Availability in Appliance Standards and Labeling Program Development and Evaluation

    E-Print Network [OSTI]

    Romankiewicz, John

    2014-01-01T23:59:59.000Z

    by design option) Data Availability and Use InternationallyData Availability in Appliance Standards and Labelingemployer. Data Availability in Appliance Standards and

  4. Trends in the cost of efficiency for appliances and consumer electronics

    E-Print Network [OSTI]

    Desroches, Louis-Benoit

    2013-01-01T23:59:59.000Z

    appliances and consumer electronics Louis-Benoit Desroches,appliances and consumer electronics have decreased in realappliances and consumer electronics are likely to diminish

  5. U-247: EMC Cloud Tiering Appliance Flaw Lets Remote Users Bypass...

    Broader source: Energy.gov (indexed) [DOE]

    7: EMC Cloud Tiering Appliance Flaw Lets Remote Users Bypass Authentication and Gain Administrative Access U-247: EMC Cloud Tiering Appliance Flaw Lets Remote Users Bypass...

  6. Tips: Shopping for Appliances | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you sure you want toworldPower 2010 1 TNews &Appliances Tips: Shopping for

  7. Tips: Smart Appliances | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you sure you want toworldPower 2010 1 TNews &Appliances Tips:

  8. Appliance Standards Awareness Project | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you0 ARRA NewslettersPartnership of the Americasfor a Clean EnergyAppliance

  9. Appliance Equipment Standards Northwest Impact Study

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041cloth DocumentationProductsAlternative FuelsSanta3 TableimpurityAppeals8I.1,,AttachmentAppliance

  10. Appliances and Commercial Equipment Standards: Guidance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041cloth DocumentationProductsAlternative FuelsSanta3Appliance and Equipment Standards Fact

  11. appliance energy testing: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    appliance energy testing First Page Previous Page 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 Next Page Last Page Topic Index 1 Energy Star Appliances 1 Texas...

  12. Utility Rebates for ENERGY STAR Appliances: Are They Effective?

    E-Print Network [OSTI]

    cost. The World Energy Outlook 2009, published by the International Energy Agency (IEA), highlightsUtility Rebates for ENERGY STAR Appliances: Are They Effective? Souvik Datta Sumeet Gulati CEPE;UTILITY REBATES FOR ENERGY STAR APPLIANCES: ARE THEY EFFECTIVE? SOUVIK DATTA ETH Z¨urich SUMEET GULATI

  13. Introducing a digital library reading appliance into a reading group

    E-Print Network [OSTI]

    Marshall, Cathy

    Introducing a digital library reading appliance into a reading group Catherine C. Marshall, Morgan will we read digital library materials? This paper describes the reading practices of an on-going reading group, and how these practices changed when we introduced XLibris, a digital library reading appliance

  14. Load Component Database of Household Appliances and Small Office Equipment

    SciTech Connect (OSTI)

    Lu, Ning; Xie, YuLong; Huang, Zhenyu; Puyleart, Francis; Yang, Steve

    2008-07-24T23:59:59.000Z

    This paper discusses the development of a load component database for household appliances and office equipment. To develop more accurate load models at both transmission and distribution level, a better understanding on the individual behaviors of home appliances and office equipment under power system voltage and frequency variations becomes more and more critical. Bonneville Power Administration (BPA) has begun a series of voltage and frequency tests against home appliances and office equipments since 2005. Since 2006, Researchers at Pacific Northwest National Laboratory has collaborated with BPA personnel and developed a load component database based on these appliance testing results to facilitate the load model validation work for the Western Electricity Coordinating Council (WECC). In this paper, the testing procedure and testing results are first presented. The load model parameters are then derived and grouped. Recommendations are given for aggregating the individual appliance models to feeder level, the models of which are used for distribution and transmission level studies.

  15. Waste water heat recovery appliance. Final report

    SciTech Connect (OSTI)

    Chapin, H.D.; Armstrong, P.R.; Chapin, F.A.W.

    1983-11-21T23:59:59.000Z

    An efficient convective waste heat recovery heat exchanger was designed and tested. The prototype appliance was designed for use in laundromats and other small commercial operations which use large amounts of hot water. Information on general characteristics of the coin-op laundry business, energy use in laundromats, energy saving resources already in use, and the potential market for energy saving devices in laundromats was collected through a literature search and interviews with local laundromat operators in Fort Collins, Colorado. A brief survey of time-use patterns in two local laundromats was conducted. The results were used, with additional information from interviews with owners, as the basis for the statistical model developed. Mathematical models for the advanced and conventional types were developed and the resulting computer program listed. Computer simulations were made using a variety of parameters; for example, different load profiles, hold-up volumes, wall resistances, and wall areas. The computer simulation results are discussed with regard to the overall conclusions. Various materials were explored for use in fabricating the appliance. Resistance to corrosion, workability, and overall suitability for laundromat installations were considered for each material.

  16. Incorporating Experience Curves in Appliance Standards Analysis

    SciTech Connect (OSTI)

    Garbesi, Karina; Chan, Peter; Greenblatt, Jeffery; Kantner, Colleen; Lekov, Alex; Meyers, Stephen; Rosenquist, Gregory; Buskirk, Robert Van; Yang, Hung-Chia; Desroches, Louis-Benoit

    2011-10-31T23:59:59.000Z

    The technical analyses in support of U.S. energy conservation standards for residential appliances and commercial equipment have typically assumed that manufacturing costs and retail prices remain constant during the projected 30-year analysis period. There is, however, considerable evidence that this assumption does not reflect real market prices. Costs and prices generally fall in relation to cumulative production, a phenomenon known as experience and modeled by a fairly robust empirical experience curve. Using price data from the Bureau of Labor Statistics, and shipment data obtained as part of the standards analysis process, we present U.S. experience curves for room air conditioners, clothes dryers, central air conditioners, furnaces, and refrigerators and freezers. These allow us to develop more representative appliance price projections than the assumption-based approach of constant prices. These experience curves were incorporated into recent energy conservation standards for these products. The impact on the national modeling can be significant, often increasing the net present value of potential standard levels in the analysis. In some cases a previously cost-negative potential standard level demonstrates a benefit when incorporating experience. These results imply that past energy conservation standards analyses may have undervalued the economic benefits of potential standard levels.

  17. Chemical order in Ge{sub x}As{sub y}Se{sub 1-x-y} glasses probed by high resolution X-ray photoelectron spectroscopy

    SciTech Connect (OSTI)

    Xu, S. W. [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); College of Applied Sciences, Beijing University of Technology, Beijing100124 (China); Wang, R. P.; Luther-Davies, B. [Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra, ACT 0200 (Australia); Kovalskiy, A. [Department of Physics and Astronomy, Austin Peay State University, Clarksville, Tennessee 37043 (United States); Miller, A. C.; Jain, H. [Department of Materials Science and Engineering, Lehigh University, 5 East Packer Avenue, Bethlehem, Pennsylvania 18015-3195 (United States)

    2014-02-28T23:59:59.000Z

    We have measured high-resolution x-ray photoelectron spectra of Ge{sub x}As{sub y}Se{sub 1-x-y} glasses with a mean coordination number (MCN) from 2.2 to 2.78. The valence band spectra showed that a number of Se–Se–Se trimers can be found in Se-rich samples, whilst multiband features induced by phase separation can be observed in extremely Se-poor samples. When the Ge, As, and Se 3d spectra were decomposed into several doublets, which correspond, respectively, to different chemical environments, the perfect AsSe{sub 3/2} pyramidal and GeSe{sub 4/2} tetrahedral structures in Se-rich samples gradually evolved into defect structures, including As–As and Ge–Ge homopolar bonds, with increasing Ge and As concentrations. Two transition-like features were found at MCN?=?2.5 and 2.64–2.72 that correspond first to the disappearance of Se-chains in the glass network and, subsequently, destruction of the perfect GeSe{sub 4/2} tetrahedral structures, respectively.

  18. Using Hidden Markov Models for Iterative Non-intrusive Appliance Monitoring

    E-Print Network [OSTI]

    Southampton, University of

    Using Hidden Markov Models for Iterative Non-intrusive Appliance Monitoring Oliver Parson, Hampshire, SO17 1BJ, UK {op106,sg2,mjw,acr}@ecs.soton.ac.uk Abstract Non-intrusive appliance load monitoring appliances. 1 Introduction Non-intrusive appliance load monitoring (NIALM), or energy disaggregation, aims

  19. Nebraska Appliance Rebate Program opens | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    Appliance Rebate Program opens July 12, 2010 - 4:00pm Addthis Lindsay Gsell Nearly 500 people lined up outside of Omaha's Nebraska Furniture Mart on July 6, waiting to get ENERGY...

  20. Innovative Concept Appliances: Proposed Penalty (2010-CE-03/0415)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Innovative Concept Appliances, LLC, failed to certify a variety of residential clothes washers and clothes dryers as compliant with the applicable energy conservation standards.

  1. ASKO Appliances: Proposed Penalty (2010-CE-04/0614)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that ASKO Appliances, Inc. failed to certify a variety of residential dishwashers and clothes dryers as compliant with the applicable energy conservation standards.

  2. Midea Washing Appliance: Proposed Penalty (2011-CE-1903)

    Broader source: Energy.gov [DOE]

    DOE alleged in a Notice of Proposed Civil Penalty that Midea Washing Appliances Mfg. Co., Ltd. failed to certify a variety of dishwashers as compliant with the applicable water and energy conservation standards.

  3. Sales Tax Holiday for Energy-Efficient Appliances

    Broader source: Energy.gov [DOE]

    The state of Missouri offers consumers a seven-day ''exemption from state sales taxes'' on certain Energy Star certified new appliances. The state sales tax holiday, known as the "Show-Me Green...

  4. Modeling diffusion of electrical appliances in the residential sector

    SciTech Connect (OSTI)

    McNeil, Michael A.; Letschert, Virginie E.

    2009-11-22T23:59:59.000Z

    This paper presents a methodology for modeling residential appliance uptake as a function of root macroeconomic drivers. The analysis concentrates on four major energy end uses in the residential sector: refrigerators, washing machines, televisions and air conditioners. The model employs linear regression analysis to parameterize appliance ownership in terms of household income, urbanization and electrification rates according to a standard binary choice (logistic) function. The underlying household appliance ownership data are gathered from a variety of sources including energy consumption and more general standard of living surveys. These data span a wide range of countries, including many developing countries for which appliance ownership is currently low, but likely to grow significantly over the next decades as a result of economic development. The result is a 'global' parameterization of appliance ownership rates as a function of widely available macroeconomic variables for the four appliances studied, which provides a reliable basis for interpolation where data are not available, and forecasting of ownership rates on a global scale. The main value of this method is to form the foundation of bottom-up energy demand forecasts, project energy-related greenhouse gas emissions, and allow for the construction of detailed emissions mitigation scenarios.

  5. Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1,

    E-Print Network [OSTI]

    Coppersmith, Susan N.

    Valley splitting theory of SiGe/Si/SiGe quantum wells Mark Friesen,1, * Sucismita Chutia,1 Charles an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting interface, with characteristic energy splittings of order 0.1­1 meV for the case of SiGe/Si/SiGe quantum

  6. Electrical appliance energy consumption control methods and electrical energy consumption systems

    DOE Patents [OSTI]

    Donnelly, Matthew K. (Kennewick, WA); Chassin, David P. (Pasco, WA); Dagle, Jeffery E. (Richland, WA); Kintner-Meyer, Michael (Richland, WA); Winiarski, David W. (Kennewick, WA); Pratt, Robert G. (Kennewick, WA); Boberly-Bartis, Anne Marie (Alexandria, VA)

    2008-09-02T23:59:59.000Z

    Electrical appliance energy consumption control methods and electrical energy consumption systems are described. In one aspect, an electrical appliance energy consumption control method includes providing an electrical appliance coupled with a power distribution system, receiving electrical energy within the appliance from the power distribution system, consuming the received electrical energy using a plurality of loads of the appliance, monitoring electrical energy of the power distribution system, and adjusting an amount of consumption of the received electrical energy via one of the loads of the appliance from an initial level of consumption to an other level of consumption different than the initial level of consumption responsive to the monitoring.

  7. Electrical appliance energy consumption control methods and electrical energy consumption systems

    DOE Patents [OSTI]

    Donnelly, Matthew K. (Kennewick, WA); Chassin, David P. (Pasco, WA); Dagle, Jeffery E. (Richland, WA); Kintner-Meyer, Michael (Richland, WA); Winiarski, David W. (Kennewick, WA); Pratt, Robert G. (Kennewick, WA); Boberly-Bartis, Anne Marie (Alexandria, VA)

    2006-03-07T23:59:59.000Z

    Electrical appliance energy consumption control methods and electrical energy consumption systems are described. In one aspect, an electrical appliance energy consumption control method includes providing an electrical appliance coupled with a power distribution system, receiving electrical energy within the appliance from the power distribution system, consuming the received electrical energy using a plurality of loads of the appliance, monitoring electrical energy of the power distribution system, and adjusting an amount of consumption of the received electrical energy via one of the loads of the appliance from an initial level of consumption to an other level of consumption different than the initial level of consumption responsive to the monitoring.

  8. 6 mW and 30 mW laser threshold for respectively 1st Brillouin Stokes order in a Ge10As24Se68 chalcogenide fiber.

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    fiber made of chalcogenide glass to make a BFL [5]. A 3 meter long suspended-core AsSe chalcogenide have replaced the suspended-core chalcogenide AsSe previously used by a microstructured Ge10As24Se68 diameter of the AsSe suspended- core fiber is 240 µm and the core diameter d is 3.8 µm. The mode effective

  9. GE Healthcare Product Guide 2007

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare BioProcess Product Guide 2007 #12;How to contact us Europe www.gehealthcare.com/bioprocess or by phone (T), fax (F), and Email Austria T: +43 1 57 606 1613 F: +43 1 57 606 1614 Email: cust.orderde@ge.com Belgium T: 0800 73890 F: 02 416 8206 Email: order.bnl@ge.com Central and East Europe (Austria) T: +43 1

  10. Predicting Backdrafting and Spillage for Natural-Draft Gas Combustion Appliances: Validating VENT-II

    E-Print Network [OSTI]

    1 Predicting Backdrafting and Spillage for Natural-Draft Gas Combustion Appliances: Validating VENT. "Predicting Backdrafting and Spillage for Natural-Draft Gas Combustion Appliances: A Validation of VENT

  11. V-021: Cisco IronPort Web / Email Security Appliance Sophos Anti...

    Broader source: Energy.gov (indexed) [DOE]

    1: Cisco IronPort Web Email Security Appliance Sophos Anti-Virus Multiple Vulnerabilities V-021: Cisco IronPort Web Email Security Appliance Sophos Anti-Virus Multiple...

  12. Impacts of China's Current Appliance Standards and Labeling Program to 2020

    E-Print Network [OSTI]

    Fridley, David; Aden, Nathaniel; Zhou, Nan; Lin, Jiang

    2007-01-01T23:59:59.000Z

    coal-fired electricity generation in China, appliance standards and labeling programs also help to mitigate air-pollution

  13. 11th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Office of Environmental Management (EM)

    Energy Conservation Standards Activities Buildings Home About Emerging Technologies Residential Buildings Commercial Buildings Appliance & Equipment Standards Building Energy Codes...

  14. Comment submitted by BSH Home Appliances Corporation regarding the Energy Star Verification Testing Program

    Broader source: Energy.gov [DOE]

    This document is a comment submitted by BSH Home Appliances Corporation regarding the Energy Star Verification Testing Program

  15. COMPRESSIVE SAMPLING FOR NON-INTRUSIVE APPLIANCE LOAD MONITORING (NALM) USING CURRENT WAVEFORMS

    E-Print Network [OSTI]

    Leus, Geert

    COMPRESSIVE SAMPLING FOR NON-INTRUSIVE APPLIANCE LOAD MONITORING (NALM) USING CURRENT WAVEFORMS advanced services like dynamic electricity pricing. The non-intrusive appliance load monitoring (NALM) [1/off status of each appliance from the compressed measurement as if the original non-compressed measurement

  16. Nonserial Dynamic Programming with Applications in Smart Home Appliances Scheduling Part I: Precedence Graph Simplification

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    Nonserial Dynamic Programming with Applications in Smart Home Appliances Scheduling ­ Part I-- In this and a companion paper a dynamic pro- gramming (DP) approach to solve a smart home appliances scheduling problem to the smart home appliances scheduling problem considered in [1], [2]. The problem seeks to determine

  17. COOKING APPLIANCE USE IN CALIFORNIA HOMES--DATA

    E-Print Network [OSTI]

    COOKING APPLIANCE USE IN CALIFORNIA HOMES--DATA COLLECTED FROM A WEB-BASED SURVEY Victoria L. Klug, Agnes B. Lobscheid, and Brett C. Singer Environmental Energy Technologies Division August 2011 LBNL-5028 FROM A WEB-BASED SURVEY Victoria L. Klug, Agnes B. Lobscheid, and Brett C. Singer Indoor Environment

  18. Smart Meter Deployment Optimization for Efficient Electrical Appliance State Monitoring

    E-Print Network [OSTI]

    Wang, Yongcai

    appliances in buildings has attracted great attentions for smart, green and sustainable living. Traditional hard, greedy algorithm, approxi- mation ratio, smart building, sensor network I. INTRODUCTION in such buildings, researches in the field of smart building and smart grid are exploring an efficient energy

  19. Monitoring Massive Appliances by a Minimal Number of Smart Meters

    E-Print Network [OSTI]

    Wang, Yongcai

    56 Monitoring Massive Appliances by a Minimal Number of Smart Meters YONGCAI WANG, XIAOHONG HAO. This article presents a framework for deploying a minimal number of smart meters to accurately track the ON of required smart meters is studied by an entropy-based approach, which qualifies the impact of meter

  20. Leveraging smart meter data to recognize home appliances Markus Weiss+#

    E-Print Network [OSTI]

    Leveraging smart meter data to recognize home appliances Markus Weiss+# , Adrian Helfenstein -- The worldwide adoption of smart meters that measure and communicate residential electricity consumption gives demand. In this paper we present an infrastructure and a set of algorithms that make use of smart meters

  1. Rebound Effect in Energy Efficient Appliance Adopting Households 

    E-Print Network [OSTI]

    Glenn, Jacob Matthew

    2014-12-10T23:59:59.000Z

    This paper uses data from smart meter technology to estimate the occurrence of energy rebound, a “substitution” and “income’ effect where the price-per-use of an appliance falls relative to its energy efficiency. This causes households to have more...

  2. Combustion Safety for Appliances Using Indoor Air (Fact Sheet)

    SciTech Connect (OSTI)

    Not Available

    2014-05-01T23:59:59.000Z

    This measure guideline covers how to assess and carry out the combustion safety procedures for appliances and heating equipment that uses indoor air for combustion in low-rise residential buildings. Only appliances installed in the living space, or in an area freely communicating with the living space, vented alone or in tandem with another appliance are considered here. A separate measure guideline addresses combustion appliances located either within the living space in enclosed closets or side rooms or outside the living space in an adjacent area like an attic or garage that use outdoor air for combustion. This document is for inspectors, auditors, and technicians working in homes where energy upgrades are being conducted whether or not air infiltration control is included in the package of measures being applied. In the indoor combustion air case, guidelines summarized here are based on language provided in several of the codes to establish minimum requirements for the space using simplified prescriptive measures. In addition, building performance testing procedures are provided by testing agencies. The codes in combination with the test procedures offer comprehensive combustion safety coverage to address safety concerns, allowing inexperienced residential energy retrofit inspectors to effectively address combustion safety issues and allow energy retrofits to proceed.

  3. ISSUANCE 2015-06-08: Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

    Broader source: Energy.gov [DOE]

    Solicitation of Nominations for Membership on the Appliance Standards and Rulemaking Federal Advisory Committee

  4. A System for Smart Home Control of Appliances based on Timer and Speech Interaction

    E-Print Network [OSTI]

    Haque, S M Anamul; Islam, Md Ashraful

    2010-01-01T23:59:59.000Z

    The main objective of this work is to design and construct a microcomputer based system: to control electric appliances such as light, fan, heater, washing machine, motor, TV, etc. The paper discusses two major approaches to control home appliances. The first involves controlling home appliances using timer option. The second approach is to control home appliances using voice command. Moreover, it is also possible to control appliances using Graphical User Interface. The parallel port is used to transfer data from computer to the particular device to be controlled. An interface box is designed to connect the high power loads to the parallel port. This system will play an important role for the elderly and physically disable people to control their home appliances in intuitive and flexible way. We have developed a system, which is able to control eight electric appliances properly in these three modes.

  5. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    Claeys, et al. , "Si versus Ge for future microelectronics,"in Selectively Doped Si/Si x Ge 1-x Superlattices," PhysicalA. Fitzgerald, et al. , "Relaxed Ge x Si 1-x structures for

  6. Diffusion in SiGe and Ge

    E-Print Network [OSTI]

    Liao, Christopher Yuan Ting

    2010-01-01T23:59:59.000Z

    High-electron-mobility Si/SiGe heterostructures: influenceof the relaxed SiGe buffer layer," Semiconductor Science andFrom its discovery to SiGe devices," Materials Science in

  7. Test of QED to fourth order by study of four-lepton final states in e(+)e(?) interactions at 29 GeV with the HRS detector

    E-Print Network [OSTI]

    Baringer, Philip S.

    1990-10-01T23:59:59.000Z

    Data taken with the High Resolution Spectrometer detector at the SLAC storage ring PEP were used to test QED to fourth order in the coupling constant ?. The experiment studied four-lepton final states produced at high Q(2) in e(+)e(?) interactions...

  8. Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Monolayer Passivation of Ge(100) Surface via Nitridation and Oxidation Joon Sung Leea,b , Sarah R passivation of Ge(100) surface via formation of Ge-N and Ge-O surface species was studied using scanning cyclotron resonance (ECR) plasma source formed an ordered Ge-N structure on a Ge(100) surface at 500o C. DFT

  9. Design Considerations for Frequency Responsive Grid Friendly Appliances

    SciTech Connect (OSTI)

    Lu, Ning; Hammerstrom, Donald J.

    2006-05-24T23:59:59.000Z

    The paper addresses design considerations for frequency responsive Grid FriendlyTM appliances (FR-GFAs). Case studies have been done based on the frequency data collected in 2003 in Western Electricity Coordinating Council (WECC) systems. An FR-GFA can turn on/off based on frequency signals and make selective low-frequency load shedding possible at appliance level. FR-GFAs can also be treated as an spinning reserve to maintain a load-to-generation balance under power system normal operation states. The triggering frequency and duration of the FR-GFA device with different frequency setting schemes are simulated. Design considerations of the FR-GFA are then discussed based on simulation results.

  10. VEA-0016 - In the Matter of GE Appliances | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn AprilA group current C3EDepartment ofPrivilegesUnauthorized Access |DarrylDepartment7 -

  11. TEE-0074 - In the Matter of GE Appliances & Lighting | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,ZaleskiThis Decision considers an AppealNORDYNE,Energy

  12. TEE-0077 - In the Matter of GE Appliances & Lighting | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOn April 23, 2014,ZaleskiThis Decision considers an

  13. Progress toward Producing Demand-Response-Ready Appliances

    SciTech Connect (OSTI)

    Hammerstrom, Donald J.; Sastry, Chellury

    2009-12-01T23:59:59.000Z

    This report summarizes several historical and ongoing efforts to make small electrical demand-side devices like home appliances more responsive to the dynamic needs of electric power grids. Whereas the utility community often reserves the word demand response for infrequent 2 to 6 hour curtailments that reduce total electrical system peak load, other beneficial responses and ancillary services that may be provided by responsive electrical demand are of interest. Historically, demand responses from the demand side have been obtained by applying external, retrofitted, controlled switches to existing electrical demand. This report is directed instead toward those manufactured products, including appliances, that are able to provide demand responses as soon as they are purchased and that require few, or no, after-market modifications to make them responsive to needs of power grids. Efforts to be summarized include Open Automated Demand Response, the Association of Home Appliance Manufacturer standard CHA 1, a simple interface being developed by the U-SNAP Alliance, various emerging autonomous responses, and the recent PinBus interface that was developed at Pacific Northwest National Laboratory.

  14. Laboratory Testing of Demand-Response Enabled Household Appliances

    SciTech Connect (OSTI)

    Sparn, B.; Jin, X.; Earle, L.

    2013-10-01T23:59:59.000Z

    With the advent of the Advanced Metering Infrastructure (AMI) systems capable of two-way communications between the utility's grid and the building, there has been significant effort in the Automated Home Energy Management (AHEM) industry to develop capabilities that allow residential building systems to respond to utility demand events by temporarily reducing their electricity usage. Major appliance manufacturers are following suit by developing Home Area Network (HAN)-tied appliance suites that can take signals from the home's 'smart meter,' a.k.a. AMI meter, and adjust their run cycles accordingly. There are numerous strategies that can be employed by household appliances to respond to demand-side management opportunities, and they could result in substantial reductions in electricity bills for the residents depending on the pricing structures used by the utilities to incent these types of responses.The first step to quantifying these end effects is to test these systems and their responses in simulated demand-response (DR) conditions while monitoring energy use and overall system performance.

  15. An Analysis of the Price Elasticity of Demand for Household Appliances

    SciTech Connect (OSTI)

    Fujita, Kimberly; Dale, Larry; Fujita, K. Sydny

    2008-01-25T23:59:59.000Z

    This report summarizes our study of the price elasticity of demand for home appliances, including refrigerators, clothes washers, and dishwashers. In the context of increasingly stringent appliance standards, we are interested in what kind of impact the increased manufacturing costs caused by higher efficiency requirements will have on appliance sales. We begin with a review of existing economics literature describing the impact of economic variables on the sale of durable goods.We then describe the market for home appliances and changes in this market over the past 20 years, performing regression analysis on the shipments of home appliances and relevant economic variables including changes to operating cost and household income. Based on our analysis, we conclude that the demand for home appliances is price inelastic.

  16. Pacific Northwest GridWise™ Testbed Demonstration Projects; Part II. Grid Friendly™ Appliance Project

    SciTech Connect (OSTI)

    Hammerstrom, Donald J.; Brous, Jerry; Chassin, David P.; Horst, Gale R.; Kajfasz, Robert; Michie, Preston; Oliver, Terry V.; Carlon, Teresa A.; Eustis, Conrad; Jarvegren, Olof M.; Marek, W.; Munson, Ryan L.; Pratt, Robert G.

    2007-10-01T23:59:59.000Z

    Fifty residential electric water heaters and 150 new residential clothes dryers were modified to respond to signals received from underfrequency, load-shedding appliance controllers. Each controller monitored the power-grid voltage signal and requested that electrical load be shed by its appliance whenever electric power-grid frequency fell below 59.95 Hz. The controllers and their appliances were installed and monitored for more than a year at residential sites at three locations in Washington and Oregon. The controllers and their appliances responded reliably to each shallow underfrequency event—an average of one event per day—and shed their loads for the durations of these events. Appliance owners reported that the appliance responses were unnoticed and caused little or no inconvenience for the homes’ occupants.

  17. Load control in low voltage level of the electricity grid using CHP appliances

    E-Print Network [OSTI]

    Al Hanbali, Ahmad

    1 Load control in low voltage level of the electricity grid using µCHP appliances M.G.C. Bosman, V.g.c.bosman@utwente.nl Abstract--The introduction of µCHP (Combined Heat and Power) appliances and other means of distributed on the transformers and, thus, on the grid. In this work we study the influence of introducing µCHP appliances

  18. 6th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Assistant Secretary on February 2009....

  19. 8th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Deputy Assistant Secretary on February...

  20. 2nd Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    to Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Assistant Secretary on February 2007....

  1. 15th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Assistant Secretary on February 2014....

  2. 4th Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    to Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Assistant Secretary on February 2008....

  3. 10th Semi-Annual Report to Congress on Appliance Energy Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    to Congress on Appliance Energy Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Assistant Secretary on August 2011....

  4. 1st Semi-Annual Report to Congress on Appliance Energy-Efficiency...

    Broader source: Energy.gov (indexed) [DOE]

    to Congress on Appliance Energy-Efficiency Rulemakings - Implementation Report: Energy Conservation Standards Activities, as issued by the Assistant Secretary on August 2006....

  5. Pollutant Emission Factors from Residential Natural Gas Appliances: A Literature Review

    E-Print Network [OSTI]

    Traynor, G.W.

    2011-01-01T23:59:59.000Z

    journals related to natural gas combustion and air pollutionemitted from natural gas combustion are predominately lessNatural Gas- fired Appliances," Proceedings: How Significant Are Residential Combustion

  6. Impacts of Imported Liquefied Natural Gas on Residential Appliance Components: Literature Review

    E-Print Network [OSTI]

    Lekov, Alex

    2010-01-01T23:59:59.000Z

    Fundamentals of Gas Combustion. 2001: Washington, DC. 131Components A gas appliance combustion system accomplishestransfers energy from hot combustion gases to water or air

  7. Pollutant Emission Factors from Residential Natural Gas Appliances: A Literature Review

    E-Print Network [OSTI]

    Traynor, G.W.

    2011-01-01T23:59:59.000Z

    related to natural gas combustion and air pollution wereemitted from natural gas combustion are predominately lessGas- fired Appliances," Proceedings: How Significant Are Residential Combustion

  8. Impacts of Imported Liquefied Natural Gas on Residential Appliance Components: Literature Review

    E-Print Network [OSTI]

    Lekov, Alex

    2010-01-01T23:59:59.000Z

    which, in the case of home heating appliances, could resultHeaters, Direct Heating Equipment, Mobile Home Furnaces,Heaters, Direct Heating Equipment, Mobile Home Furnaces,

  9. Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Ge/SiGe Quantum Confined Stark Effect Modulators on Silicon James S. Harris, Yu-Hsuan Kuo bandwidth have been demonstrated [4]. 2. Quantum well design Ge is an indirect band gap material, but it has. In order to have good quantum confinement, SiGe barriers are used since Si and Ge have a very high direct

  10. Uniaxially stressed Ge:Ga and Ge:Be

    SciTech Connect (OSTI)

    Dubon, O.D. Jr.

    1992-12-01T23:59:59.000Z

    The application of a large uniaxial stress to p-type Ge single crystals changes the character of both the valence band and the energy levels associated with the acceptors. Changes include the splitting of the fourfold degeneracy of the valence band top and the reduction of the ionization energy of shallow acceptors. In order to study the effect of uniaxial stress on transport properties of photoexcited holes, a variable temperature photo-Hall effect system was built in which stressed Ge:Ga and Ge:Be could be characterized. Results indicate that stress increases the lifetime and Hall mobility of photoexcited holes. These observations may help further the understanding of fundamental physical processes that affect the performance of stressed Ge photoconductors including the capture of holes by shallow acceptors.

  11. SiGe/sSi quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Witzel, Wayne M; Carroll, Malcolm S

    2011-01-01T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/sSi quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  12. SiGe/Si quantum dot electron spin decoherence dependence on $^{73}$Ge

    E-Print Network [OSTI]

    Wayne M. Witzel; Rajib Rahman; Malcolm S. Carroll

    2012-05-14T23:59:59.000Z

    We theoretically study the nuclear spin induced decoherence of a quantum dot in Si that is confined at a SiGe interface. We calculate decoherence time dependence on $^{73}$Ge in the barrier layer to evaluate the importance of Ge as well as Si enrichment for long decoherence times. We use atomistic tight-binding modeling for an accurate account of the electron wavefunction which is particularly important for determining the contact hyperfine interactions with the Ge nuclear spins. We find decoherence times due to Ge spins at natural concentrations to be milliseconds. This suggests SiGe/Si quantum dot devices employing enriched Si will require enriched Ge as well in order to benefit from long coherence times. We provide a comparison of $T_2$ times for various fractions of nonzero spin isotopes of Si and Ge.

  13. New energy test procedures for refrigerators and other appliances

    SciTech Connect (OSTI)

    Meier, Alan; Ernebrant, Stefan; Kawamoto, Kaoru; Wihlborg, Mats

    1999-04-01T23:59:59.000Z

    Many innovations in refrigerator design rely on microprocessors, sensors, and algorithms to control automatic defrost, variable speed,and other features. Even though these features strongly influence energy consumption, the major energy test procedures presently test only a refrigerator's mechanical efficiency and ignore the ''software'' aspects. We describe a new test procedure where both ''hardware'' and ''software'' tests are fed into a dynamic simulation model. A wide range of conditions can be tested and simulated. This approach promotes international harmonization because the simulation model can also be programmed to estimate energy use for the ISO, DOE, or JIS test. The approach outlined for refrigerators can also be applied to other appliances.

  14. Appliance energy efficiency in new home construction. Final report

    SciTech Connect (OSTI)

    Not Available

    1980-11-30T23:59:59.000Z

    A survey of 224 builders was conducted to which 160 builders responded. Each respondent completed between one and seven separate questionnaires. Each of the seven questionnaires were designed to collect information about one type of equipment or major appliance. These are: heat pump; heating system; air conditioner; domestic water heater; dishwasher; range; and refrigerator. Analysis of the resulting 406 questionnaires indicated that builders were primarily responsible for brand selection. These choices were made primarily without regard for the energy efficiency of the product. A similar apparent lack of consideration of energy efficiency during brand and model selection was found among home buyers and specialized subcontractors.

  15. A State-Queueing Model of Thermostatically Controlled Appliances

    SciTech Connect (OSTI)

    Lu, Ning; Chassin, David P.

    2004-08-01T23:59:59.000Z

    This paper develops a new method to analyze the price response of aggregated loads consisting of thermostatically controlled appliances (TCAs). Assuming a perfectly diversified load before the price response, we show that TCA setpoint changes in response to the market price will result in a redistribution of TCAs in on/off states and therefore change the probabilities for a unit to reside in each state. A randomly distributed load can be partially synchronized and the aggregated diversity lost. The lost of the load diversity can then create unexpected dynamics in the aggregated load profile. Raising issues such as restoring load diversity and damping the peak loads are also addressed in the paper.

  16. DOE Issues Final Appliance Test Procedure Rule | Department of Energy

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 111 1,613PortsmouthBartlesvilleAbout »Department of2 DOE F 1300.2Million) GoDOEMedicalAppliance

  17. Appliance and Equipment Standards Program | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed off Energy.gov. Are you sure you want toworldPower 2010 1A PotentialAllison CaseyAnnualAppliance and

  18. Research & Development Roadmap: Next-Generation Appliances | Department of

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33 1112011 Strategic2 OPAM615_CostNSAR -Department ofEMSpent NuclearEnergy Appliances Research

  19. Save Energy on Appliances this Holiday Season | Department of Energy

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del Sol HomeFacebook Twitter Principal InvestigatorsSave Energy on Appliances this

  20. Estimating Appliance and Home Electronic Energy Use | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the YouTube|6721 FederalTexas EnergyofIdaho | Department of EnergyEstimating Appliance

  1. Appliance Rebates: Frequently Asked Questions | Department of Energy

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO Overview OCHCOSystemsProgram OverviewAdvocate -AmirAnnual ReportAppliance Rebates:

  2. Recently a lot of multimedia applications are emerging on portable appliances. They require both the flexibility of

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Abstract Recently a lot of multimedia applications are emerging on portable appliances and not only prototypes. Reconfigurable FPGA's are particularly suited for multimedia applications on portable appliances. In fact, tomorrow's multimedia applications will require both the flexibility of upgradeable

  3. "Table HC15.10 Home Appliances Usage Indicators by Four Most...

    U.S. Energy Information Administration (EIA) Indexed Site

    AppliancesTools",56.2,5,3.4,4.3,6.2 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,"Q","N","N","N" "Hot Tub or Spa",6.7,"Q",0.7,0.5,1.2 "Swimming Pool with...

  4. "Table HC11.10 Home Appliances Usage Indicators by Northeast...

    U.S. Energy Information Administration (EIA) Indexed Site

    AppliancesTools",56.2,12.2,9.4,2.8 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,"Q","Q","Q" "Hot Tub or Spa",6.7,1,0.8,0.2 "Swimming Pool with...

  5. "Table HC12.10 Home Appliances Usage Indicators by Midwest Census...

    U.S. Energy Information Administration (EIA) Indexed Site

    AppliancesTools",56.2,12,9,3.1 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,0.4,"Q","Q" "Hot Tub or Spa",6.7,1.3,0.9,0.4 "Swimming Pool with...

  6. "Table HC14.10 Home Appliances Usage Indicators by West Census...

    U.S. Energy Information Administration (EIA) Indexed Site

    AppliancesTools",56.2,11.6,3.3,8.2 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,0.2,"Q",0.1 "Hot Tub or Spa",6.7,2.2,0.6,1.7 "Swimming Pool with...

  7. Cal Poly, San Luis Obispo | University Housing Update to Appliance and Electronic Device Guidelines for Residence Halls

    E-Print Network [OSTI]

    Sze, Lawrence

    Cal Poly, San Luis Obispo | University Housing Update to Appliance and Electronic Device Guidelines guidelines. This guideline notice serves as a campus update to the Appliance and Electronic Device Community appliances and personal care devices being used in the rooms. Often these items are not energy efficient

  8. The Demand Reduction Potential of Smart Appliances in U.S. Homes

    SciTech Connect (OSTI)

    Makhmalbaf, Atefe; Srivastava, Viraj; Parker, Graham B.

    2013-08-14T23:59:59.000Z

    The widespread deployment of demand respond (DR) enabled home appliances is expected to have significant reduction in the demand of electricity during peak hours. The work documented in this paper focuses on estimating the energy shift resulting from the installation of DR enabled smart appliances in the U.S. This estimation is based on analyzing the market for smart appliances and calculating the total energy demand that can potentially be shifted by DR control in appliances. Appliance operation is examined by considering their sub components individually to identify their energy consumptions and savings resulting from interrupting and shifting their load, e.g., by delaying the refrigerator defrost cycle. In addition to major residential appliances, residential pool pumps are also included in this study given their energy consumption profiles that make them favorable for DR applications. In the market analysis study documented in this paper, the U.S. Energy Information Administration's (EIA) Residential Energy Consumption Survey (RECS) and National Association of Home Builders (NAHB) databases are used to examine the expected life of an appliance, the number of appliances installed in homes constructed in 10 year intervals after 1940 and home owner income. Conclusions about the effectiveness of the smart appliances in reducing electrical demand have been drawn and a ranking of appliances in terms of their contribution to load shift is presented. E.g., it was concluded that DR enabled water heaters result in the maximum load shift; whereas, dishwashers have the highest user elasticity and hence the highest potential for load shifting through DR. This work is part of a larger effort to bring novel home energy management concepts and technologies to reduce energy consumption, reduce peak electricity demand, integrate renewables and storage technology, and change homeowner behavior to manage and consume less energy and potentially save consumer energy costs.

  9. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Zhengping Jiang; Neerav Kharche; Timothy Boykin; Gerhard Klimeck

    2012-03-06T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  10. Effects of Interface Disorder on Valley Splitting in SiGe/Si/SiGe Quantum Wells

    E-Print Network [OSTI]

    Jiang, Zhengping; Boykin, Timothy; Klimeck, Gerhard

    2011-01-01T23:59:59.000Z

    A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts the 2-fold valley degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines in detail the effects of Si/SiGe interface disorder on the VS in an atomistic tight binding approach based on statistical sampling. VS is analyzed as a function of electric field, QW thickness, and simulation domain size. Strong electric fields push the electron wavefunctions into the SiGe buffer and introduce significant VS fluctuations from device to device. A Gedankenexperiment with ordered alloys sheds light on the importance of different bonding configurations on VS. We conclude that a single SiGe band offset and effective mass cannot comprehend the complex Si/SiGe interface interactions that dominate VS.

  11. Issues in federal preemption of state appliance energy efficiency regulations

    SciTech Connect (OSTI)

    Fang, J.M.; Balistocky, S.; Schaefler, A.M.

    1982-12-01T23:59:59.000Z

    The findings and conclusions of the analysis of the various issues involved in the federal preemption of state regulations for the DOE no standard rule on covered appliances are summarized. The covered products are: refrigerators, refrigerator-freezers, freezers, clothes dryers, kitchen ranges and ovens, water heaters (excluding heat pump water heaters), room air conditioners, central air conditioners (excluding heat pumps), and furnaces. A detailed discussion of the rationale for the positions of groups offering comment for the record is presneted. The pertinent categories of state and local regulations and programs are explained, then detailed analysis is conducted on the covered products and regulations. Issues relating to the timing of preemption of state regulations are discussed, as well as issues relating to burden of proof, contents of petitions for exemptions from preemption, criteria for evaluating petitions, and procedural and other issues. (LEW)

  12. Efficiency of appliance models on the market before and after DOE standards

    SciTech Connect (OSTI)

    Meyers, Stephen

    2004-06-15T23:59:59.000Z

    Energy efficiency standards for appliances mandate that appliance manufacturers not manufacture or import models that have a test energy efficiency below a specified level after the standard effective date. Thus, appliance standards set a floor for energy efficiency. But do they also induce more significant changes in the efficiencies that manufacturers offer after the standard becomes effective? To address this question, we undertook an examination of before-standard and after-standard efficiency of models on the market for three products: (1) Refrigerators (1990, 1993, and 2001 standards); (2) Room air conditioners (1990 and 2000 standards); and (3) Gas furnaces (1992 standard).

  13. Mitigating Carbon Emissions: the Potential of Improving Efficiency of Household Appliances in China

    E-Print Network [OSTI]

    Lin, Jiang

    2006-01-01T23:59:59.000Z

    in the next 20-30 years as China builds large quantity ofof power generation in China from 0.230 in 2003 to 0.164 kgHousehold Appliances in China Jiang Lin Environmental Energy

  14. Impacts of China's Current Appliance Standards and Labeling Program to 2020

    E-Print Network [OSTI]

    Fridley, David; Aden, Nathaniel; Zhou, Nan; Lin, Jiang

    2007-01-01T23:59:59.000Z

    58: Historical and Forecast China Average Household Size,P ROGRAM Impacts of China’s Current Appliance Standards and68 Implications for China’s Current Energy Policy and

  15. Impacts of Imported Liquefied Natural Gas on Residential Appliance Components: Literature Review

    SciTech Connect (OSTI)

    Lekov, Alex; Sturges, Andy; Wong-Parodi, Gabrielle

    2009-12-09T23:59:59.000Z

    An increasing share of natural gas supplies distributed to residential appliances in the U.S. may come from liquefied natural gas (LNG) imports. The imported gas will be of a higher Wobbe number than domestic gas, and there is concern that it could produce more pollutant emissions at the point of use. This report will review recently undertaken studies, some of which have observed substantial effects on various appliances when operated on different mixtures of imported LNG. While we will summarize findings of major studies, we will not try to characterize broad effects of LNG, but describe how different components of the appliance itself will be affected by imported LNG. This paper considers how the operation of each major component of the gas appliances may be impacted by a switch to LNG, and how this local impact may affect overall safety, performance and pollutant emissions.

  16. 0 + 0 = 1 : the appliance model of selling software bundled with hardware

    E-Print Network [OSTI]

    Hein, Bettina

    2007-01-01T23:59:59.000Z

    The business model of selling software bundled with hardware is called the appliance model. As hardware becomes less and less expensive and open source software is being offered for free, the traditional business model of ...

  17. Table HC15.10 Home Appliances Usage Indicators by Four Most...

    Gasoline and Diesel Fuel Update (EIA)

    Tools... 56.2 5.0 3.4 4.3 6.2 Other Appliances Used Auto BlockEngineBattery Heater... 0.8 Q N N N Hot Tub or Spa......

  18. "Table HC9.10 Home Appliances Usage Indicators by Climate Zone...

    U.S. Energy Information Administration (EIA) Indexed Site

    0 Home Appliances Usage Indicators by Climate Zone, 2005" " Million U.S. Housing Units" ,,"Climate Zone1" ,,"Less than 2,000 CDD and --",,,,"2,000 CDD or More and Less than 4,000...

  19. Estimation of the Energy and Capacity Savings in Texas from Appliance Efficiency Standards

    E-Print Network [OSTI]

    Verdict, M.

    1986-01-01T23:59:59.000Z

    The purpose of this presentation will be to assess the technical potential for energy and capacity savings in Texas by the year 2006 by the statewide adoption of minimum appliance efficiency standards equivalent to those recently adopted...

  20. Evaluation of advanced technologies for residential appliances and residential and commercial lighting

    SciTech Connect (OSTI)

    Turiel, I.; Atkinson, B.; Boghosian, S.; Chan, P.; Jennings, J.; Lutz, J.; McMahon, J.; Rosenquist, G.

    1995-01-01T23:59:59.000Z

    Section 127 of the Energy Policy Act requires that the Department of Energy (DOE) prepare a report to Congress on the potential for the development and commercialization of appliances that substantially exceed the present federal or state efficiency standards. Candidate high-efficiency appliances must meet several criteria including: the potential exists for substantial improvement (beyond the minimum established in law) of the appliance`s energy efficiency; electric, water, or gas utilities are prepared to support and promote the commercialization of such appliances; manufacturers are unlikely to undertake development and commercialization of such appliances on their own, or development and production would be substantially accelerated by support to manufacturers. This report describes options to improve the efficiency of residential appliances, including water heaters, clothes washers and dryers, refrigerator/freezers, dishwashers, space heating and cooling devices, as well as residential and commercial lighting products. Data from this report (particularly Appendix 1)were used to prepare the report to Congress mentioned previously. For the residential sector, national energy savings are calculated using the LBL Residential Energy Model. This model projects the number of households and appliance saturations over time. First, end-use consumption is calculated for a base case where models that only meet the standard replace existing models as these reach the end of their lifetime. Second, models with efficiencies equal to the technology under consideration replace existing models that reach the end of their lifetime. For the commercial sector, the COMMEND model was utilized to project national energy savings from new technologies. In this report, energy savings are shown for the period 1988 to 2015.

  1. Use of Residential Smart Appliances for Peak Load Shifting & Spinning Reserves: Cost Benefit Analysis

    SciTech Connect (OSTI)

    Sastry, Chellury; Pratt, Robert G.

    2010-12-01T23:59:59.000Z

    Abstract In this paper, we present the results of an analytical cost-benefit study of residential smart appliances in support of a joint stakeholder petition to the EPA and DOE to provide a 5% credit to meet ENERGY STAR eligibility criteria for products that meet the definition of a smart appliance. The underlying hypothesis is that smart appliances can play a critical role in addressing some of the challenges associated with increased electricity demand, and increased penetration of renewable sources of power. Our analytical model utilizes current annual appliance electricity consumption data, and estimates what the wholesale grid operating cost savings would be if some percentage of appliance loads were shifted away from peak hours to run during off-peak hours, and appliance loads serve power system balancing needs such as spinning reserves that would otherwise have to be provided by generators. Historical wholesale market clearing prices (location marginal and spinning reserve) from major wholesale power markets in the United States are used to estimate savings. The savings are then compared with the five percent credit, to determine if the savings in grid operating costs (benefits) are at least as high as the credit (cost) if not higher.

  2. ASKO Appliances: Order (2012-CE-19/2004) | Department of Energy

    Office of Environmental Management (EM)

    civil penalty after finding ASKO had failed to certify that certain models of residential dishwashers and clothes washers comply with the applicable energy and water...

  3. ASKO Appliances: Order (2012-CE-19/2004) | Department of Energy

    Broader source: Energy.gov (indexed) [DOE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742Energy China 2015ofDepartmentDepartment of2 of 5) ALARA TrainingANDREW ( ARI| March

  4. CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GE 210 MATH 223CE 212 CMPT 116 Hum/SocSci Jr. GEOE 218 CE 225 MATH 224GE 213# GE 348# CE 295 English 11x# CE 315 CE 311 CE 318 CE 319 CE 317 CE 316CE 327 CE 321 Sr Sci elect#CE 329 CE 328 GE 300# Eng/Sr Sci Elec# CE Elec

  5. Thermal conductivity of sputtered amorphous Ge films

    SciTech Connect (OSTI)

    Zhan, Tianzhuo; Xu, Yibin; Goto, Masahiro; Tanaka, Yoshihisa; Kato, Ryozo; Sasaki, Michiko; Kagawa, Yutaka [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)] [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047 (Japan)

    2014-02-15T23:59:59.000Z

    We measured the thermal conductivity of amorphous Ge films prepared by magnetron sputtering. The thermal conductivity was significantly higher than the value predicted by the minimum thermal conductivity model and increased with deposition temperature. We found that variations in sound velocity and Ge film density were not the main factors in the high thermal conductivity. Fast Fourier transform patterns of transmission electron micrographs revealed that short-range order in the Ge films was responsible for their high thermal conductivity. The results provide experimental evidences to understand the underlying nature of the variation of phonon mean free path in amorphous solids.

  6. Comment submitted by the Association of Home Appliance Manufacturers (AHAM) regarding the Energy Star Verification Testing Program

    Broader source: Energy.gov [DOE]

    This document is a comment submitted by the Association of Home Appliance Manufacturers (AHAM) regarding the Energy Star Verification Testing Program

  7. What can we learn from high-frequency appliance-level energy metering? Results from a field experiment

    E-Print Network [OSTI]

    Chen, VL; Delmas, MA; Kaiser, WJ; Locke, SL

    2015-01-01T23:59:59.000Z

    Newborough, M. , 2003. Dynamic energy-consumption indicatorsbehaviour and design. Energy Build. 35 (8), Please cite thisfrequency appliance-level energy metering? Results from a ?

  8. Properties of excited states in {sup 77}Ge.

    SciTech Connect (OSTI)

    Kay, B. P.; Chiara, C. J.; Schiffer, J. P.; Kondev, F. G.; Zhu, S.; Carpenter, M. P.; Janssens, R. V. F.; Lauritsen, T.; Lister, C. J.; McCutchan, E. A.; Seweryniak, D.; Stefanescu, I.; Univ. of Maryland; Horia-Hulubei National Inst. for Physics and Nuclear Engineering

    2009-07-01T23:59:59.000Z

    The nucleus {sup 77}Ge was studied through the {sup 76}Ge({sup 13}C,{sup 12}C){sup 77}Ge reaction at a sub-Coulomb energy. The angular distributions of rays depopulating excited states in {sup 77}Ge were measured in order to constrain spin and parity assignments. Some of these assignments are of use in connection with neutrinoless double beta decay, where the population of states near the Fermi surface of {sup 76}Ge was recently explored using transfer reactions.

  9. Recovery and separation of high-value plastics from discarded household appliances

    SciTech Connect (OSTI)

    Karvelas, D.E.; Jody, B.J.; Poykala, J.A. Jr.; Daniels, E.J. [Argonne National Lab., IL (United States). Energy Systems Div.; Arman, B. [Argonne National Lab., IL (United States). Energy Systems Div.]|[Praxair, Inc., Tarrytown, NY (United States)

    1996-03-01T23:59:59.000Z

    Argonne National Laboratory is conducting research to develop a cost- effective and environmentally acceptable process for the separation of high-value plastics from discarded household appliances. The process under development has separated individual high purity (greater than 99.5%) acrylonitrile-butadiene-styrene (ABS) and high- impact polystyrene (HIPS) from commingled plastics generated by appliance-shredding and metal-recovery operations. The process consists of size-reduction steps for the commingled plastics, followed by a series of gravity-separation techniques to separate plastic materials of different densities. Individual plastics of similar densities, such as ABS and HIPS, are further separated by using a chemical solution. By controlling the surface tension, the density, and the temperature of the chemical solution we are able to selectively float/separate plastics that have different surface energies. This separation technique has proven to be highly effective in recovering high-purity plastics materials from discarded household appliances. A conceptual design of a continuous process to recover high-value plastics from discarded appliances is also discussed. In addition to plastics separation research, Argonne National Laboratory is conducting research to develop cost-effective techniques for improving the mechanical properties of plastics recovered from appliances.

  10. Supervised start system for microprocessor based appliance controls

    SciTech Connect (OSTI)

    Fowler, D.L.; Kadwell, B.J.

    1986-12-09T23:59:59.000Z

    A supervisory start system is described for an appliance control that includes a microprocessor, manually actuatable keyboard switch means, and first and second relay means; the microprocessor including first, second and third input means and first, second and third output means and being conditioned to generate control signals at the output means upon receipt of electrical signals at the input means; the supervisory start circuit comprising, in combination, first, second and third transistors each having a base, an emitter and a collector. The first transistor means controls energization of the first relay means and is controlled by the manually actuatable switch means; the manually actuatable switch means being electrically connected to the first output means of the microprocessor and the base of the first transistor; the base of the second transistor being connected to the second output means of the microprocessor, the emitter of the second transistor being connected to a source of potential, the collector of the second transistor being connected to the emitter of the first transistor; the collector of the first transistor being connected to the first relay means; the second transistor being operable to connect the emitter of the first transistor to the source of potential when a signal from the second output means of the microprocessor is applied to the base of the second transistor; the microprocessor being conditioned to emit a signal at the second output means upon receipt of a signal at the first input means; means for latching the first transistor in a conducting condition upon being energized; and means for applying an electrical signal to the second input means when the first transistor means is in a conducting condition.

  11. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 Hum/SocSci Jr. MATH 224 English 11x CHE 220CHE 210 CHECHE 413 Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470

  12. CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 COMM 102GE 110 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 CMPT 116CHEM 250# MATH 223 EE 201 GE 213 Grp. A elective*CHE 223 HSS@# MATH 224 English 11x CHE 220CHE 210 CHE 323 CHE Grp. B elective#* Grp. B elective*#CHE 424 CHE 421 CHE 422 GE 348# CHE 423 GE 449# CH E 470^ Chemical

  13. CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    CHEM 114 GE 124 MATH 110 GE 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 ME 227 GE 213# MATH 223 EE 201ME 214 CMPT 116 ME 215 GE 226 MATH 224 Hum/SocSci@# ME 251 ME 229 ME 318 ME 335 ME 313 ME 316 ME 352ME 330 GE 348# ME 328 ME 327 ME 323 ME 321ME 324 RCM 300# ME 418 ME 417 ME 450 ME 431

  14. GE ?????????????????4G?????...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE 4G Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click...

  15. Abstract-In this paper we evaluate the energy and economic consequences of appliance remanufacturing relative to purchasing

    E-Print Network [OSTI]

    Gutowski, Timothy

    Abstract- In this paper we evaluate the energy and economic consequences of appliance that economic incentives can be an influential driver for consumers to remanufacture and re-use old appliances washer. There is considerable amount of literature regarding policy, economics, and efficiency impacts

  16. Building Storage Appliances for the Grid and Beyond John Bent, Andrea Arpaci-Dusseau, Remzi Arpaci-Dusseau, Miron Livny

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Building Storage Appliances for the Grid and Beyond John Bent, Andrea Arpaci-Dusseau, Remzi Arpaci,dusseau,remzi,miron@cs.wisc.edu Abstract Current storage appliances have been traditionally de- signed to meet either the storage demands challenges to storage ap- pliances that would be used on the grid. NeST is a user-level software-only storage

  17. Building Storage Appliances for the Grid and Beyond John Bent, Andrea ArpaciDusseau, Remzi ArpaciDusseau, Miron Livny

    E-Print Network [OSTI]

    Wisconsin at Madison, University of

    Building Storage Appliances for the Grid and Beyond John Bent, Andrea Arpaci­Dusseau, Remzi Arpaci,dusseau,remzi,miron@cs.wisc.edu Abstract Current storage appliances have been traditionally de­ signed to meet either the storage demands challenges to storage ap­ pliances that would be used on the grid. NeST is a user­level software­only storage

  18. Mitigating Carbon Emissions: the Potential of Improving Efficiencyof Household Appliances in China

    SciTech Connect (OSTI)

    Lin, Jiang

    2006-07-10T23:59:59.000Z

    China is already the second's largest energy consumer in the world after the United States, and its demand for energy is expected to continue to grow rapidly in the foreseeable future, due to its fast economic growth and its low level of energy use per capita. From 2001 to 2005, the growth rate of energy consumption in China has exceeded the growth rate of its economy (NBS, 2006), raising serious concerns about the consequences of such energy use on local environment and global climate. It is widely expected that China is likely to overtake the US in energy consumption and greenhouse gas (GHG) emissions during the first half of the 21st century. Therefore, there is considerable interest in the international community in searching for options that may help China slow down its growth in energy consumption and GHG emissions through improving energy efficiency and adopting more environmentally friendly fuel supplies such as renewable energy. This study examines the energy saving potential of three major residential energy end uses: household refrigeration, air-conditioning, and water heating. China is already the largest consumer market in the world for household appliances, and increasingly the global production base for consumer appliances. Sales of household refrigerators, room air-conditioners, and water heaters are growing rapidly due to rising incomes and booming housing market. At the same time, the energy use of Chinese appliances is relatively inefficient compared to similar products in the developed economies. Therefore, the potential for energy savings through improving appliance efficiency is substantial. This study focuses particularly on the impact of more stringent energy efficiency standards for household appliances, given that such policies are found to be very effective in improving the efficiency of household appliances, and are well established both in China and around world (CLASP, 2006).

  19. GE Healthcare Introduction

    E-Print Network [OSTI]

    Lebendiker, Mario

    GE Healthcare Introduction HR 16 columns are designed for high resolution liquid chromatography your local GE Healthcare office. System compatibility HR 16 columns are designed to be used with ÄKTATM. Wash the parts thoroughly in distilled water. 4. Reassemble the column (see Assembling the column above

  20. Accelerating the Adoption of Second-Tier Reach Standards forApplicable Appliance Products in China

    SciTech Connect (OSTI)

    Lin, Jiang; Fridley, David

    2007-03-01T23:59:59.000Z

    The minimum energy efficiency standards program for household appliances in China was initiated in 1989. Since 1996, CLASP and its implementing partner, LBNL, have assisted China in developing 11 minimum energy performance standards (MEPS) for 9 products and endorsement labels for 11 products including: refrigerators; air conditioners; clothes washers; televisions; printers; computers; monitors; fax machines; copiers; DVD/VCD players; external power supplies; and set-top boxes (under development). Before 2003, China's traditional approach to standards development involved small increases in efficiency requirements for implementation within 6 months of a standard's approval. Since 2003, China has adopted a new approach in setting MEPS. This new approach involves the development of two tiers of standards--one for initial implementation and a second tier at a more aggressive level of energy efficiency for implementation three to five years later. The second-tier standard is also referred to as a 'reach standard'. Reach standards have now been developed in China for: color TVs; refrigerators; air conditioners; and external power supplies. This report is presented in five sections. After the introduction in Section 1, Section 2 analyzes the distribution of the efficiency of refrigerators and air-conditioners in China based on data collected by the China Energy Label Center for the mandatory energy information label program. The results provide an assessment of the adoption of reach standards for these two products. Section 3 summarizes on-going collaborations with Shanghai related to early local adoption of reach standards, and presents both the impact and an analysis of barriers to the local adoption of reach standard for air-conditioners. Section 4 offers suggestions for local governments on how to move forward in adopting reach standards in their localities and concludes with a summary of the results and a plan for developing local capacity in order to achieve success in adopting reach standards.

  1. Realized and Projected Impacts of U.S. Energy Efficiency Standards for Residential and Commercial Appliances

    SciTech Connect (OSTI)

    Meyers, Stephen P.; McMahon, James; Atkinson, Barbara

    2008-05-08T23:59:59.000Z

    This study estimated energy, environmental and consumer economic impacts of U.S. Federal residential energy efficiency standards that became effective in the 1988-2006 period, and of energy efficiency standards for fluorescent lamp ballasts and distribution transformers. These standards have been the subject of in-depth analyses conducted as part of DOE's standards rulemaking process. This study drew on those analyses, but updated certain data and developed a common framework and assumptions for all of the products in order to estimate realized impacts and to update projected impacts. It also performed new analysis for the first (1990) fluorescent ballast standards, which had been introduced in the NAECA legislation without a rulemaking. We estimate that the considered standards will reduce residential/ commercial primary energy consumption and carbon dioxide emissions in 2030 by 4percent compared to the levels expected without any standards. The reduction for the residential sector is larger, at 8percent. The estimated cumulative energy savings from the standards amount to 39 quads by 2020, and 63 quads by 2030. The standards will also reduce emissions of carbon dioxide by considerable amounts.The estimated cumulative net present value of consumer benefit amounts to $241 billion by 2030, and grows to $269 billion by 2045. The overall ratio of consumer benefits to costs (in present value terms) in the 1987-2050 period is 2.7 to 1. Although the estimates made in this study are subject to a fair degree of uncertainty, we believe they provide a reasonable approximation of the national benefits resulting from Federal appliance efficiency standards.

  2. Chevron, GE form Technology Alliance

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    form Technology Alliance February 3, 2014 HOUSTON, TX, Feb. 3, 2014-Chevron Energy Technology Company and GE Oil & Gas announced today the creation of the Chevron GE Technology...

  3. Opportunities for regional harmonization of appliance standards and l abeling program

    SciTech Connect (OSTI)

    McNeil, Michael A.

    2003-09-01T23:59:59.000Z

    The South Asian Regional Initiative for Energy (SARI/Energy) calls for a series of activities to promote Energy Efficiency Standards and Labeling (EES&L) of end use appliances in the region. In pursuit of this goal, the project supports several seminars and meetings that bring together policymakers and stakeholders from throughout the region. The purpose of these gatherings is to encourage a dialogue among participants as to the benefits and barriers associated with EES&L programs. In addition, it is the role of the program organizers to provide participants with the technical details necessary to make progress towards effective efficiency programs. One component of the initiative is to encourage the harmonization (alignment) of existing program components, and the pursuit of new programs coordinated at the regional level. In support of this goal, the report provides information aimed at motivating and enabling cooperative activities which will provide concrete benefits to programs in each country, whether well developed, or still in the initial planning stage. It should be emphasized that the underlying objective of the harmonization component of the SARI/Energy project is to increase the potential for success of EES&L programs of all countries involved, and to reduce burdens on manufacturers, exporters and importers in each country. Harmonization ''for it's own sake'' is not desirable, nor is it suggested that policymakers should bring their programs in line with international norms if doing so would present a disadvantage to their own efficiency programs, or to commercial interests within their country. If there is no such disadvantage, however, the program encourages alignment of policies and provides a forum at which this alignment can be pursued. The report covers several main topics, with varying emphasis. First, a general discussion of the motivation for an explicit policy of regional harmonization is given. Next, the current status of existing programs in the region are discussed in some detail. The section that follows covers the harmonization of efficiency test procedures. Special attention is given to this component of an EES&L program because it is the most critical element in terms of harmonization--having incompatible test procedures between trade partners can greatly impact the effectiveness of a program, and it can also unduly impact trade. Currently, policymakers in India and Sri Lanka are collaborating with the goal of aligning refrigerator test procedures used in their respective programs. For this reason, the section on test procedures of refrigerators goes into a significant amount of technical detail, in order to provide the clearest possible articulation of issues to be resolved in bringing the procedures into alignment. Following the discussion of test procedures, the report contains a section each on harmonization of efficiency rating levels, development of label designs, and enforcement issues. The report is organized such that the sections covering current programs and test procedures are subdivided by target appliance. These sections are further divided by country, where applicable. Each section is concluded with recommendations.

  4. Electrical Appliances Students may use clocks, sound equipment, computers, electric razors, hair dryers,

    E-Print Network [OSTI]

    Aalberts, Daniel P.

    with a heating coil *Torchiere type lamps with a halogen bulb, and other lamps with a halogen bulb greater than there is specific UL approval for a higher wattage. Violators of any of the above policies will be charged $50, Prohibited Appliances, and Halogen Torchiere Lamps 1st offense: $50.00 fine and the student will be called

  5. Tracking States of Massive Electrical Appliances by Lightweight Metering and Sequence Decoding

    E-Print Network [OSTI]

    Wang, Yongcai

    to track the on/off states of N appliances by deploying only m smart meters on the power load tree, where m demonstrate some interesting structures of the problem. Keywords Energy auditing, Smart meter, Deployment smart meter networks, and thus suffer from the high deploy- ment, maintenance and data collection costs

  6. T-531: The WebVPN implementation on Cisco Adaptive Security Appliances (ASA) 5500

    Broader source: Energy.gov [DOE]

    The WebVPN implementation on Cisco Adaptive Security Appliances (ASA) 5500 series devices with software before 8.2(3) permits the viewing of CIFS shares even when CIFS file browsing has been disabled, which allows remote authenticated users to bypass intended access restrictions via CIFS requests, aka Bug ID CSCsz80777.

  7. Less Watts, More Performance: An Intelligent Storage Engine for Data Appliances

    E-Print Network [OSTI]

    Teubner, Jens

    how Ibex reduces data movement, CPU usage, and overall energy consumption in database appliances­27, 2013, New York, New York, USA. Copyright 2013 ACM 978-1-4503-2037-5/13/06 ...$10.00. MySQL Server M y- proves performance and also reduces energy consumption. Query processing in relational databases may

  8. @scale: Insights from a Large, Long-Lived Appliance Stephen Dawson-Haggerty

    E-Print Network [OSTI]

    Culler, David E.

    Design, Measurement, Performance Keywords Energy, Audit, Building, Power, Wireless, Sensor Network 1@scale: Insights from a Large, Long-Lived Appliance Energy WSN Stephen Dawson-Haggerty , Steven Lanzisera , Jay Taneja , Richard Brown , and David Culler Computer Science Division Environmental Energy

  9. Design Techniques for Sensor Appliances: Foundations and Light Compass Case Study

    E-Print Network [OSTI]

    Potkonjak, Miodrag

    sensors of the appliance, and (2) error minimization-based sensor data interpretation middleware. We have University of California, Los Angeles jwong@cs.ucla.edu Seapahn Megerian University of California, Los Angeles seapahn@cs.ucla.edu Miodrag Potkonjak University of California, Los Angeles miodrag

  10. Energy-Harvesting Thermoelectric Sensing for Unobtrusive Water and Appliance Metering

    E-Print Network [OSTI]

    Dutta, Prabal

    Energy-Harvesting Thermoelectric Sensing for Unobtrusive Water and Appliance Metering Bradford that meters using the same thermoelectric generator with which it powers itself. In short, the rate at which be harvested with a thermoelectric generator (TEG) to power a sensor node. TEGs utilize the Seebeck effect

  11. Energy and CO2 efficient scheduling of smart appliances in active houses equipped with batteries

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    Energy and CO2 efficient scheduling of smart appliances in active houses equipped with batteries the electricity bill and the CO2 emissions. Mathematically, the scheduling problem is posed as a multi that the new formulation can decrease both the CO2 emissions and the electricity bill. Furthermore, a survey

  12. A Texas Study of the Effects of the National Appliance Energy Conservation Act of 1987

    E-Print Network [OSTI]

    Bachmeier, R.

    1987-01-01T23:59:59.000Z

    on the amount of energy which can be consumed by major new household appliances. The efficiency standards mandated by the NAECA will be phased in between 1988 and 1993 and will focus on space heating equipment, air conditioners, water heaters, refrigerators...

  13. Impact of domestic woodburning appliances on indoor air quality Corinne Mandin1

    E-Print Network [OSTI]

    Boyer, Edmond

    air pollution study (CITEPA), France * Corresponding email: Eva.Leoz@ineris.fr SUMMARY Data pollutants in ambient air. Consequently our study aims at describing both emission factors and inerisImpact of domestic woodburning appliances on indoor air quality Corinne Mandin1 , Jacques Ribéron2

  14. "Table HC13.10 Home Appliances Usage Indicators by South Census...

    U.S. Energy Information Administration (EIA) Indexed Site

    Tools",56.2,20.5,10.8,3.6,6.1 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,"N","N","N","N" "Hot Tub or Spa",6.7,2.1,1.2,0.2,0.7 "Swimming Pool with...

  15. "Table HC4.10 Home Appliances Usage Indicators by Renter-Occupied...

    U.S. Energy Information Administration (EIA) Indexed Site

    Tools",56.2,23.6,4.4,2.4,4.6,11.3,0.8 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,"Q","Q","Q","Q","N","N" "Hot Tub or Spa",6.7,"Q","Q","Q","N","N","Q" "Swimming...

  16. "Table HC3.10 Home Appliances Usage Indicators by Owner-Occupied...

    U.S. Energy Information Administration (EIA) Indexed Site

    Tools",56.2,32.6,25,2.2,1.1,1.5,2.8 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,0.7,0.7,"N","Q","N","Q" "Hot Tub or Spa",6.7,6.5,6.2,"Q","N","N","Q" "Swimming...

  17. "Table HC8.10 Home Appliances Usage Indicators by Urban/Rural...

    U.S. Energy Information Administration (EIA) Indexed Site

    Tools",56.2,27.2,10.6,9.3,9.2 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,"Q","Q","Q",0.4 "Hot Tub or Spa",6.7,1.7,1.2,2.2,1.6 "Swimming Pool with...

  18. Table HC6.10 Home Appliances Usage Indicators by Number of Household...

    Annual Energy Outlook 2013 [U.S. Energy Information Administration (EIA)]

    Tools..... 56.2 20.1 14.4 8.6 6.9 6.2 Other Appliances Used Auto BlockEngineBattery Heater... 0.8 Q 0.4 Q Q Q Hot Tub or Spa......

  19. "Table HC10.10 Home Appliances Usage Indicators by U.S. Census...

    U.S. Energy Information Administration (EIA) Indexed Site

    Tools",56.2,12.2,12,20.5,11.6 "Other Appliances Used" "Auto BlockEngineBattery Heater",0.8,"Q",0.4,"N",0.2 "Hot Tub or Spa",6.7,1,1.3,2.1,2.2 "Swimming Pool with...

  20. Measure Guideline: Combustion Safety for Natural Draft Appliances Using Indoor Air

    SciTech Connect (OSTI)

    Brand, L.

    2014-04-01T23:59:59.000Z

    This measure guideline covers how to assess and carry out the combustion safety procedures for appliances and heating equipment that uses indoor air for combustion in low-rise residential buildings. Only appliances installed in the living space, or in an area freely communicating with the living space, vented alone or in tandem with another appliance are considered here. A separate measure guideline addresses combustion appliances located either within the living space in enclosed closets or side rooms or outside the living space in an adjacent area like an attic or garage that use outdoor air for combustion. This document is for inspectors, auditors, and technicians working in homes where energy upgrades are being conducted whether or not air infiltration control is included in the package of measures being applied. In the indoor combustion air case, guidelines summarized here are based on language provided in several of the codes to establish minimum requirements for the space using simplified prescriptive measures. In addition, building performance testing procedures are provided by testing agencies. The codes in combination with the test procedures offer comprehensive combustion safety coverage to address safety concerns, allowing inexperienced residential energy retrofit inspectors to effectively address combustion safety issues and allow energy retrofits to proceed.

  1. An Appliance-driven Approach to Detection of Corrupted Load Curve Data

    E-Print Network [OSTI]

    Pei, Jian

    An Appliance-driven Approach to Detection of Corrupted Load Curve Data Guoming Tang1,3 , Kui Wu1@sfu.ca, jiuyang_tang@nudt.edu.cn, jshlei@shiep.edu.cn ABSTRACT Load curve data in power systems refers to users discov- ered in the data. Load curve data, however, usually suffers from corruptions caused by various

  2. A Communication-Based Appliance Scheduling Scheme for Consumer-Premise Energy Management Systems

    E-Print Network [OSTI]

    Snyder, Larry

    of electricity prices and distributed wind power uncertainty. We model the evolution of the protocol as a two is an energy management controller that incorporates prices and user preferences to providA Communication-Based Appliance Scheduling Scheme for Consumer-Premise Energy Management Systems

  3. 2014-06-06 Appliance Standards and Rulemaking Federal Advisory Committee; Preliminary Agenda

    Broader source: Energy.gov [DOE]

    This document is a preliminary agenda for the Appliance Standards and Rulemaking Federal Advisory Committee open meeting being held on June 6, 2014 from 1:00 p.m.-5:00 p.m. (EST) at the U.S. Department of Energy, Forrestal Building, Room 8E-089, 1000 Independence Avenue SW., Washington, DC 20585.

  4. Experience from Building Industry Strength Agent-Based Appliances Leon Sterling

    E-Print Network [OSTI]

    Taveter, Kuldar

    Experience from Building Industry Strength Agent-Based Appliances Leon Sterling The University of Melbourne Department of Computer Science and Software Engineering Victoria, 3010, Australia leon@cs.mu.oz.au Kuldar Taveter The University of Melbourne Department of Computer Science and Software Engineering

  5. Standby and off-mode power demand of new appliances in the Anbal de Almeida

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Standby and off-mode power demand of new appliances in the market Aníbal de Almeida ISR regulation to limit the standby and off-mode power consumption of non-networked household electronic involved in the project. Standby and off-mode values by product categories are analyzed and compared

  6. Greatly improved interfacial passivation of in-situ high ? dielectric deposition on freshly grown molecule beam epitaxy Ge epitaxial layer on Ge(100)

    SciTech Connect (OSTI)

    Chu, R. L. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Liu, Y. C.; Lee, W. C.; Huang, M. L.; Kwo, J., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Lin, T. D.; Hong, M., E-mail: raynien@phys.nthu.edu.tw, E-mail: mhong@phys.ntu.edu.tw [Graduate Institute of Applied Physics and Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Pi, T. W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China)

    2014-05-19T23:59:59.000Z

    A high-quality high-?/Ge interface has been achieved by combining molecule beam epitaxy grown Ge epitaxial layer and in-situ deposited high ? dielectric. The employment of Ge epitaxial layer has sucessfully buried and/or removed the residue of unfavorable carbon and native oxides on the chemically cleaned and ultra-high vacuum annealed Ge(100) wafer surface, as studied using angle-resolved x-ray photoelectron spectroscopy. Moreover, the scanning tunneling microscopy analyses showed the significant improvements in Ge surface roughness from 3.5?Å to 1?Å with the epi-layer growth. Thus, chemically cleaner, atomically more ordered, and morphologically smoother Ge surfaces were obtained for the subsquent deposition of high ? dielectrics, comparing with those substrates without Ge epi-layer. The capacitance-voltage (C-V) characteristics and low extracted interfacial trap density (D{sub it}) reveal the improved high-?/Ge interface using the Ge epi-layer approach.

  7. SiGe thin-film structures for solar cells

    SciTech Connect (OSTI)

    Bremond, G.; Daami, A.; Laugier, A. [Inst. National des Sciences Appliquees de Lyon, Villeurbanne (France). Lab. de Physique de la Matiere] [and others

    1998-12-31T23:59:59.000Z

    In order to study their applicability as the active base material in Si thin crystalline film solar cell technology, SiGe relaxed layers grown by Liquid Phase Epitaxy (LPE) and Chemical Vapor Deposition (CVD) on Si substrates are investigated by optical and electrical measurements (TEM, EXD, PL, EBIC). The main results of this work is to point out the improvement of the SiGe active base layer by using smooth Ge graded SiGe buffer layer and remote plasma hydrogenation. TEM, EXD, PL experiments show the effect of the Ge graded buffer layer grown using LPE, by confining the threading dislocations in the SiGe buffer layer close to the Si/SiGe interface. EBIC measurements reveal low recombination activity of dislocations at 300 K providing the diffusion length exceeds the 15 {micro}m layer thickness. The enhanced luminescence of SiGe near bandgap indicates that remote plasma hydrogenation induces a decrease of the non-radiative recombination pathways due to dislocations on CVD layers where defect recombinations dominate as indicated by EBIC measurements. This study points out the importance of controlling relaxed SiGe layers with good minority carrier recombination quality as a key issue for the optimization of new SiGe/Si based solar cells.

  8. Metastability and relaxation in tensile SiGe on Ge(001) virtual substrates

    SciTech Connect (OSTI)

    Frigerio, Jacopo; Lodari, Mario; Chrastina, Daniel, E-mail: daniel.chrastina@polimi.it; Mondiali, Valeria; Isella, Giovanni [L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, 22100 Como (Italy); Bollani, Monica [IFN-CNR, L-NESS, via Anzani 42, 22100 Como (Italy)

    2014-09-21T23:59:59.000Z

    We systematically study the heteroepitaxy of SiGe alloys on Ge virtual substrates in order to understand strain relaxation processes and maximize the tensile strain in the SiGe layer. The degree of relaxation is measured by high-resolution x-ray diffraction, and surface morphology is characterized by atomic force microscopy. The results are analyzed in terms of a numerical model, which considers dislocation nucleation, multiplication, thermally activated glide, and strain-dependent blocking. Relaxation is found to be sensitive to growth rate and substrate temperature as well as epilayer misfit and thickness, and growth parameters are found which allow a SiGe film with over 4?GPa of tensile stress to be obtained.

  9. GE Global Research Locations | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide and MethaneLocations GE

  10. GE Global Research Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell is theOpportunitiesTheGAOHome >About GE

  11. GE Researcher Discusses Leadership | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFunding OpportunityF G F ! ( ! ( ! ( !ProgressGE

  12. July 11 Public Meeting: Physical Characterization of Grid-Connected Commercial And Residential Building End-Use Equipment And Appliances

    Broader source: Energy.gov [DOE]

    These documents contain the three slide decks presented at the public meeting on the Physical Characterization of Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances, held on July 11, 2014 in Washington, DC.

  13. Use of Residential Smart Appliances for Peak-Load Shifting and Spinning Reserves Cost/Benefit Analysis

    SciTech Connect (OSTI)

    Sastry, Chellury; Pratt, Robert G.; Srivastava, Viraj; Li, Shun

    2010-12-01T23:59:59.000Z

    In this report, we present the results of an analytical cost/benefit study of residential smart appliances from a utility/grid perspective in support of a joint stakeholder petition to the ENERGY STAR program within the Environmental Protection Agency (EPA) and Department of Energy (DOE). The goal of the petition is in part to provide appliance manufacturers incentives to hasten the production of smart appliances. The underlying hypothesis is that smart appliances can play a critical role in addressing some of the societal challenges, such as anthropogenic global warming, associated with increased electricity demand, and facilitate increased penetration of renewable sources of power. The appliances we consider include refrigerator/freezers, clothes washers, clothes dryers, room air-conditioners, and dishwashers. The petition requests the recognition that providing an appliance with smart grid capability, i.e., products that meet the definition of a smart appliance, is at least equivalent to a corresponding five percent in operational machine efficiencies. It is then expected that given sufficient incentives and value propositions, and suitable automation capabilities built into smart appliances, residential consumers will be adopting these smart appliances and will be willing participants in addressing the aforementioned societal challenges by more effectively managing their home electricity consumption. The analytical model we utilize in our cost/benefit analysis consists of a set of user-definable assumptions such as the definition of on-peak (hours of day, days of week, months of year), the expected percentage of normal consumer electricity consumption (also referred to as appliance loads) that can shifted from peak hours to off-peak hours, the average power rating of each appliance, etc. Based on these assumptions, we then formulate what the wholesale grid operating-cost savings, or benefits, would be if the smart capabilities of appliances were invoked, and some percentage of appliance loads were shifted away from peak hours to run during off-peak hours, and appliance loads served power-system balancing needs such as spinning reserves that would otherwise have to be provided by generators. The rationale is that appliance loads can be curtailed for about ten minutes or less in response to a grid contingency without any diminution in the quality of service to the consumer. We then estimate the wholesale grid operating-cost savings based on historical wholesale-market clearing prices (location marginal and spinning reserve) from major wholesale power markets in the United States. The savings derived from the smart grid capabilities of an appliance are then compared to the savings derived from a five percent increase in traditional operational machine efficiencies, referred to as cost in this report, to determine whether the savings in grid operating costs (benefits) are at least as high as or higher than the operational machine efficiency credit (cost).

  14. Reduced-Order Modeling of Aggregated Thermostatic Loads With Demand Response

    E-Print Network [OSTI]

    Zhang, Wei

    Reduced-Order Modeling of Aggregated Thermostatic Loads With Demand Response Wei Zhang, Jianming Lian, Chin-Yao Chang, Karanjit Kalsi and Yannan Sun Abstract-- Demand Response is playing population of appliances under demand response is especially important to evaluate the effec- tiveness

  15. New analysis techniques for estimating impacts of federal appliance efficiency standards

    SciTech Connect (OSTI)

    McMahon, James E.

    2003-06-24T23:59:59.000Z

    Impacts of U.S. appliance and equipment standards have been described previously. Since 2000, the U.S. Department of Energy (DOE) has updated standards for clothes washers, water heaters, and residential central air conditioners and heat pumps. A revised estimate of the aggregate impacts of all the residential appliance standards in the United States shows that existing standards will reduce residential primary energy consumption and associated carbon dioxide (CO{sub 2}) emissions by 89 percent in 2020 compared to the levels expected without any standards. Studies of possible new standards are underway for residential furnaces and boilers, as well as a number of products in the commercial (tertiary) sector, such as distribution transformers and unitary air conditioners. The analysis of standards has evolved in response to critiques and in an attempt to develop more precise estimates of costs and benefits of these regulations. The newer analysis elements include: (1) valuing energy savings by using marginal (rather than average) energy prices specific to an end-use; (2) simulating the impacts of energy efficiency increases over a sample population of consumers to quantify the proportion of households having net benefits or net costs over the life of the appliance; and (3) calculating marginal markups in distribution channels to derive the incremental change in retail prices associated with increased manufacturing costs for improving energy efficiency.

  16. Thermoelectric properties of nanoporous Ge

    E-Print Network [OSTI]

    Lee, Joo-Hyoung

    We computed thermoelectric properties of nanoporous Ge (np-Ge) with aligned pores along the [001] direction through a combined classical molecular dynamics and first-principles electronic structure approach. A significant ...

  17. GE Anna Heijbel / The Storm

    E-Print Network [OSTI]

    Tian, Weidong

    1 / GE Anna Heijbel / The Storm® Confocal Optics 50, 100, 200 µm 5 IQTL · ·DNA ·DNA Gels, blots, tissue sections (not in situ), radio-TLC & X-Ray diffraction #12;2 / GE Anna Heijbel / Phosphor µm 1010 43 x 35 cm43 x 35 cm Scanning Technology #12;3 / GE Anna Heijbel / Confocal Optics PMTPMT

  18. Agenda for Public Meeting on the Physical Characterization of Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    Download the agenda below for the July 11 Public Meeting on the Physical Characterization of Grid-Connected Commercial and  Residential Buildings End-Use Equipment and Appliances.

  19. HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping of Ocular Dominance Columns

    E-Print Network [OSTI]

    HSE 1 HSE 2 HSE 3 GE 1 GE 2 GE 3 Residual effects of Large Vessels in GE BOLD Differential Mapping these techniques in humans. Previous human studies (4-6) instead used the conventional GE BOLD technique, combined and limitations of GE BOLD differential mapping as compared to HSE BOLD differential mapping of ocular dominance

  20. Characteristics of Sn segregation in Ge/GeSn heterostructures

    SciTech Connect (OSTI)

    Li, H.; Chang, C.; Chen, T. P.; Cheng, H. H., E-mail: hhcheng@ntu.edu.tw [Center for Condensed Matter Sciences and Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Shi, Z. W.; Chen, H. [Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-10-13T23:59:59.000Z

    We report an investigation of Sn segregation in Ge/GeSn heterostructures occurred during the growth by molecular beam epitaxy. The measured Sn profile in the Ge layer shows that: (a) the Sn concentration decreases rapidly near the Ge/GeSn interface, and (b) when moving away from the interface, the Sn concentration reduced with a much slower rate. The 1/e decay lengths of the present system are much longer than those of the conventional group IV system of Ge segregation in the Si overlayer because of the smaller kinetic potential as modeled by a self-limited two-state exchange scheme. The demonstration of the Sn segregation shows the material characteristics of the heterostructure, which are needed for the investigation of its optical properties.

  1. Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization

    SciTech Connect (OSTI)

    Oya, N.; Toko, K., E-mail: toko@bk.tsukuba.ac.jp; Suemasu, T. [Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Saitoh, N.; Yoshizawa, N. [Electron Microscope Facility, TIA, AIST, 16-1 Onogawa, Tsukuba 305-8569 (Japan)

    2014-06-30T23:59:59.000Z

    The highly (111)-textured Ge thin film (50-nm thickness) is demonstrated on a flexible polyimide film via the low-temperature crystallization (325?°C) of amorphous Ge using Al as a catalyst. Covering the polyimide with insulators significantly improved the crystal quality of the resulting Ge layer. In particular, SiN covering led to 97% (111)-oriented Ge with grains 200??m in size, two orders larger than the grain size of polycrystalline Ge directly formed on the polyimide film. This achievement will give a way to realize advanced electronic and optical devices simultaneously allowing for high performance, inexpensiveness, and flexibility.

  2. Max Tech and Beyond: Maximizing Appliance and Equipment Efficiency by Design

    SciTech Connect (OSTI)

    Desroches, Louis-Benoit; Garbesi, Karina

    2011-07-20T23:59:59.000Z

    It is well established that energy efficiency is most often the lowest cost approach to reducing national energy use and minimizing carbon emissions. National investments in energy efficiency to date have been highly cost-effective. The cumulative impacts (out to 2050) of residential energy efficiency standards are expected to have a benefit-to-cost ratio of 2.71:1. This project examined energy end-uses in the residential, commercial, and in some cases the industrial sectors. The scope is limited to appliances and equipment, and does not include building materials, building envelopes, and system designs. This scope is consistent with the scope of DOE's appliance standards program, although many products considered here are not currently subject to energy efficiency standards. How much energy could the United States save if the most efficient design options currently feasible were adopted universally? What design features could produce those savings? How would the savings from various technologies compare? With an eye toward identifying promising candidates and strategies for potential energy efficiency standards, the Max Tech and Beyond project aims to answer these questions. The analysis attempts to consolidate, in one document, the energy savings potential and design characteristics of best-on-market products, best-engineered products (i.e., hypothetical products produced using best-on-market components and technologies), and emerging technologies in research & development. As defined here, emerging technologies are fundamentally new and are as yet unproven in the market, although laboratory studies and/or emerging niche applications offer persuasive evidence of major energy-savings potential. The term 'max tech' is used to describe both best-engineered and emerging technologies (whichever appears to offer larger savings). Few best-on-market products currently qualify as max tech, since few apply all available best practices and components. The three primary analyses presented in this report are: Nevertheless, it is important to analyze best-on-market products, since data on truly max tech technologies are limited. (1) an analysis of the cross-cutting strategies most promising for reducing appliance and equipment energy use in the U.S.; (2) a macro-analysis of the U.S. energy-saving potential inherent in promising ultra-efficient appliance technologies; and (3) a product-level analysis of the energy-saving potential.

  3. "Table HC12.9 Home Appliances Characteristics by Midwest Census Region, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances

  4. "Table HC13.9 Home Appliances Characteristics by South Census Region, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances78 Water3.9

  5. "Table HC14.9 Home Appliances Characteristics by West Census Region, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances7835

  6. CTu2J.4.pdf CLEO Technical Digest OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells

    E-Print Network [OSTI]

    Miller, David A. B.

    CTu2J.4.pdf CLEO Technical Digest © OSA 2012 Selective-Area Growth of Ge and Ge/SiGe Quantum Wells process for growing high-quality bulk Ge and Ge/SiGe quantum wells in selected areas of 3 µm thick silicon. Introduction and motivation Ge and especially Ge/SiGe quantum wells exhibit strong electroabsorption (Franz

  7. GE Wins Manufacturing Leadership Award |GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    secured software platform that delivers data and visualizations to all major artificial lift functions at GE Oil & Gas. Several analytic modules were built to extract meaningful...

  8. GE Partners on Microgrid Project | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Academia Partner on Microgrid Project GE Awarded a 1.2M Department of Energy Grant to Design Technology to Keep Electricity Flowing after Catastrophic Weather Events...

  9. GE, Aavid Commercialize Dual Cool Jets Technology | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    market. GE's broad array of industrial businesses requires highly advanced and reliable electronics that are increasingly driving the need for advanced cooling solutions to...

  10. GE, University of Washington Disease Detection | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    excited about this team's unique ability to combine new designs for paper-based microfluidics with new nucleic amplification methods and GE's novel paper chemistries to help...

  11. The GE Store

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What'sis Taking Over Our InstagramStructureProposedPAGESafetyTed5,AuditThe FiveBiofuelsGE Store for

  12. GE PowerPoint Template

    Energy Savers [EERE]

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directed offOCHCO2: FinalOffers3.pdf0-45.pdf0 Budget Fossil EnergyFull Text ManagementDOEGE Appliances:

  13. Enhanced ferromagnetic order in Sr{sub 4}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} featuring canted [MnO{sub 4}]{sub ?} spin chains of mixed-valent Mn(III)/Mn(IV). Aliovalent substitution of the Sr{sub 4?x}Ln{sub x}Mn{sup III}{sub 2+x}Mn{sup IV}{sub 1?x}O{sub 3}(GeO{sub 4}){sub 3} solid-solution

    SciTech Connect (OSTI)

    West, J. Palmer; Sulejmanovic, Dino [Department of Chemistry, Clemson University, Clemson, SC 29634 (United States); Becht, Gregory [E. I. du Pont, Wilmington, DE 19880-0500 (United States); He, Jian; Hitchcock, Dale [Department of Physics and Astronomy, Clemson University, Clemson, SC 29634 (United States); Yan, Yonggao [Wuhan University of Technology, Wuhan 430070 (China); Hwu, Shiou-Jyh, E-mail: shwu@clemson.edu [Department of Chemistry, Clemson University, Clemson, SC 29634 (United States)

    2013-10-15T23:59:59.000Z

    Crystals of Sr{sub 4?x}Ln{sub x}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} (x=0; x?0.15 for Ln=La, Pr, Nd, Sm. Eu, Gd, Dy; x?0.3 for Ln=Gd) were isolated upon using high-temperature, solid-state methods in molten-salt media. These compounds are isostructural with the previously reported Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3} (Ln=La, Sm, Gd) series that contains the same [MnO{sub 4}]{sub ?} spin chains. The synthesis of the Sr{sub 4}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} (x=0) phase was carried out by a double aliovalent substitution with respect to the Sr{sup 2+} and Ge{sup 4+} ions that replace Na{sup +}/Ln{sup 3+} and As{sup 5+} in Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3}, respectively. The title series contains mixed-valent Mn(III)/Mn(IV) and shows a limited range of solid solution, both of which were not observed in the previously reported Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3} series. To form the Sr{sub 4?x}Ln{sub x}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} solid solution, one of the Sr{sup 2+} sites, i.e., the original Ln-site in Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3}, is partially substituted by Ln{sup 3+} in a statistical disorder of Sr{sub 1?x}/Ln{sub x}. Initial magnetic investigations of selected derivatives reveal higher ferromagnetic ordering temperatures than those reported for the Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3} series, presumably attributed to a lesser degree of canting as a result of introducing non-Jahn–Teller Mn{sup 4+} ions. Also intriguing is the observation of multiple anomalies at low temperatures which appear to be of electronic origins. - Graphical abstract: Sr{sub 4?x}Ln{sub x}Mn(III){sub 2+x}Mn(IV){sub 1?x}O{sub 3}(GeO{sub 4}){sub 3}. Display Omitted - Highlights: • Double aliovalent substitution: Sr{sub 4}Mn{sub 3}O{sub 3}(GeO{sub 4}){sub 3} with respect to Na{sub 3}LnMn{sub 3}O{sub 3}(AsO{sub 4}){sub 3}. • Solid solution with respect to statistical disorder of Sr{sub 1?x}Ln{sub x} in one of the two Sr sites. • Mn{sup 3+}/Mn{sup 4+} magnetic ions are spatially arranged in a triangular kagomé fashion. • Enhanced ferromagnetic ordering attributed to doping non-Jahn–Teller Mn{sup 4+}.

  14. An Exploration of Innovation and Energy Efficiency in an Appliance Industry

    E-Print Network [OSTI]

    Taylor, Margaret

    2013-01-01T23:59:59.000Z

    highlighted in Figure 1 – General Electric (GE), Whirlpool,Electrolux Whirlpool General Electric HHI Refrigerator2008 in Figure 8, General Electric does not provide useful

  15. Magnetic Refrigeration | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    temperature," said Frank Johnson, a materials scientist and project leader on GE's magnetic refrigeration project. Developed over the past decade, these new magnetocaloric...

  16. GE CRD SERVICE ORDER TERMS AND CONDITIONS (6/00)

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8,Dist.Newof EnergyFunding OpportunityF G F ! ( ! ( ! ( ! ( ! 100

  17. Diffusion Ordered Spectroscopy and Materials | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField Campaign: Potential ApplicationYu,Energy Innovation Portal

  18. Compositional evolution of SiGe islands on patterned Si (001) substrates

    SciTech Connect (OSTI)

    Zhang Jianjun [Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz (Austria); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Rastelli, Armando; Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Bauer, Guenther [Institute of Semiconductor and Solid State Physics, University Linz, A-4040 Linz (Austria)

    2010-11-15T23:59:59.000Z

    The authors investigate, by atomic-force-microscopy-based nanotomography, the composition evolution of ordered SiGe islands grown on pit-patterned Si (001) substrates as their size and aspect ratio increase with increasing Ge deposition. Compared to islands grown on flat substrates, the ordered island arrays show improved size, shape, and compositional homogeneity. The three-dimensional composition profiles of individual pyramids, domes, and barns reveal that the Ge fraction at the base and in subsurface regions of the islands decreases with increasing amount of deposited Ge.

  19. EPA ENERGY STAR: Tackling Growth in Home Electronics and Small Appliances

    SciTech Connect (OSTI)

    Sanchez, Marla Christine; Brown, Richard; Homan, Gregory

    2008-11-17T23:59:59.000Z

    Over a decade ago, the electricity consumption associated with home electronics and other small appliances emerged onto the global energy policy landscape as one of the fastest growing residential end uses with the opportunity to deliver significant energy savings. As our knowledge of this end use matures, it is essential to step back and evaluate the degree to which energy efficiency programs have successfully realized energy savings and where savings opportunities have been missed.For the past fifteen years, we have quantified energy, utility bill, and carbon savings for US EPA?s ENERGY STAR voluntary product labeling program. In this paper, we present a unique look into the US residential program savings claimed to date for EPA?s ENERGY STAR office equipment, consumer electronics, and other small household appliances as well as EPA?s projected program savings over the next five years. We present a top-level discussion identifying program areas where EPA?s ENERGY STAR efforts have succeeded and program areas where ENERGY STAR efforts did not successfully address underlying market factors, technology issues and/or consumer behavior. We end by presenting the magnitude of ?overlooked? savings.

  20. Appliances, Lighting, Electronics, and Miscellaneous EquipmentElectricity Use in New Homes

    SciTech Connect (OSTI)

    Brown, Richard E.; Rittelman, William; Parker, Danny; Homan,Gregory

    2007-02-28T23:59:59.000Z

    The "Other" end-uses (appliances, lighting, electronics, andmiscellaneous equipment) continue to grow. This is particularly true innew homes, where increasing floor area and amenities are leading tohigher saturation of these types of devices. This paper combines thefindings of several field studies to assess the current state ofknowledge about the "Other" end-uses in new homes. The field studiesinclude sub-metered measurements of occupied houses in Arizona, Florida,and Colorado, as well as device-level surveys and power measurements inunoccupied new homes. We find that appliances, lighting, electronics, andmiscellaneous equipment can consume from 46 percent to 88 percent ofwhole-house electricity use in current low-energy homes. Moreover, theannual consumption for the "Other" end-uses is not significantly lower innew homes (even those designed for low energy use) compared to existinghomes. The device-level surveys show that builder-installed equipment isa significant contributor to annual electricity consumption, and certaindevices that are becoming more common in new homes, such as structuredwiring systems, contribute significantly to this power consumption. Thesefindings suggest that energy consumption by these "Other" end uses isstill too large to allow cost-effective zero-energy homes.

  1. Serial and parallel Si, Ge, and SiGe direct-write with scanning...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting...

  2. APPLIANCE STANDARDS

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fan Light Kits External Power Supplies Walk-in Coolers & Freezers Commercial Refrigeration Equipment Refrigerators & Freezers Water Heaters CAC HP CAC HP Furnaces &...

  3. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2006-07 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 Hum/SocSci Jr. GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316

  4. CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120

    E-Print Network [OSTI]

    Saskatchewan, University of

    2005-2006 CHEM 114 GE 124 MATH 110 COMM 102 CHEM 115# GE 125 MATH 124 PHYS 155 GE 120 GEOL 245 MATH 223 CE 328 CE 212 CE 225 CE 295GE 213# MATH 224 GEOL 224 GEOE 218 GEOL 258 BusSci/HSS# GEOE 315 GEOE 475 Grp C Elec.# GE 348#CE 318 CE 319 ENG 11X# GEOL 463 or Grp B Elec.# GEOL 226 GE 300# CE 316 Grp

  5. Low-voltage broad-band electroabsorption from thin Ge/SiGe

    E-Print Network [OSTI]

    Miller, David A. B.

    Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using

  6. Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques

    E-Print Network [OSTI]

    Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques Gianni was arranged by Prof. C.K. Maiti Abstract Techniques for fabricating strained Si, SiGe, and Ge on is presented, with a detailed discussion of wafer bonding approaches for strained Si, SiGe, and Ge on

  7. Residential Appliance Data, Assumptions and Methodology for End-Use Forecasting with EPRI-REEPS 2.1

    E-Print Network [OSTI]

    was developed by the Electric Power Research Institute (McMenamin et al. 1992). In this modeling framework the modeling framework of the Residential End-Use Energy Planning System (REEPS) developed for the Electric provided by the Appliance Model in the Residential End-Use Energy Planning System (REEPS), which

  8. Energy-efficiency labels and standards: A guidebook for appliances, equipment and lighting

    SciTech Connect (OSTI)

    McMahon, James E.; Wiel, Stephen

    2001-02-16T23:59:59.000Z

    Energy-performance improvements in consumer products are an essential element in any government's portfolio of energy-efficiency and climate change mitigation programs. Governments need to develop balanced programs, both voluntary and regulatory, that remove cost-ineffective, energy-wasting products from the marketplace and stimulate the development of cost-effective, energy-efficient technology. Energy-efficiency labels and standards for appliances, equipment, and lighting products deserve to be among the first policy tools considered by a country's energy policy makers. The U.S. Agency for International Development (USAID) and the United Nations Foundation (UNF) recognize the need to support policy makers in their efforts to implement energy-efficiency standards and labeling programs and have developed this guidebook, together with the Collaborative Labeling and Appliance Standards Program (CLASP), as a primary reference. This guidebook was prepared over the course of the past year with significant contribution from the authors and reviewers mentioned previously. Their diligent participation has made this the international guidance tool it was intended to be. The lead authors would also like to thank the following individuals for their support in the development, production, and distribution of the guidebook: Marcy Beck, Elisa Derby, Diana Dhunke, Ted Gartner, and Julie Osborn of Lawrence Berkeley National Laboratory as well as Anthony Ma of Bevilacqua-Knight, Inc. This guidebook is designed as a manual for government officials and others around the world responsible for developing, implementing, enforcing, monitoring, and maintaining labeling and standards-setting programs. It discusses the pros and cons of adopting energy-efficiency labels and standards and describes the data, facilities, and institutional and human resources needed for these programs. It provides guidance on the design, development, implementation, maintenance, and evaluation of the programs and on the design of the labels and standards themselves. In addition, it directs the reader to references and other resources likely to be useful in conducting the activities described and includes a chapter on energy policies and programs that complement appliance efficiency labels and standards. This guidebook attempts to reflect the essential framework of labeling and standards programs. It is the intent of the authors and sponsors to distribute copies of this book worldwide at no charge for the general public benefit. The guidebook is also available on the web at www.CLASPonline.org and can be downloaded to be used intact or piecemeal for whatever beneficial purposes readers may conceive.

  9. Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

    SciTech Connect (OSTI)

    Guo, Yijun [Ames Laboratory; Rowland, Clare E [Argonne National Laboratory; Schaller, Richard D [Argonne National Laboratory; Vela, Javier [Ames Laboratory

    2014-08-26T23:59:59.000Z

    Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch compared with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.

  10. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub2}.

    SciTech Connect (OSTI)

    Peter, S. C.; Malliakas, C. D.; Nakotte, H.; Kothapilli, K.; Rayaprol, S.; Schultz, A. J.; Kanatzidis, M. G. (Materials Science Division); ( XSD); (Northwestern Univ.); (Jawaharlal Nehru Centre for Adv. Sci. Res.); (New Mexico State Univ.); (Los Alamos Nat. Lab.); (UGC-DAE Consortium for Sci. Res.)

    2012-03-01T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a = 12.2261(20) {angstrom}, b = 10.7447(20) {angstrom}, c = 8.4754(17) {angstrom} and {beta} = 110.288(30){sup o} (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge)n. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a = b = 5.9874(6) {angstrom} and c = 15.1178(19) {angstrom}. The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{alpha}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures.

  11. GE, Berkeley Energy Storage for Electric Vehicles | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Just Add Water: GE, Berkeley Lab Explore Possible Key to Energy Storage for Electric Vehicles Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  12. Cold Spray and GE Technology | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    difference of the work done at GE Global Research is the development of cold spray for additive manufacturing, where we adapt this novel coating process to build 3D shapes....

  13. GE Researcher Explores Science Behind Movie Chappie | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    When Will We Have Robot Best Friends? A GE Researcher Explores the Science Behind Movie Magic Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new...

  14. Joining GE Global Research Thermal Systems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Alps. With more than 16 years working as an aerospace engineer in the development of gas turbine jet engines, I had GE on my radar screen right from the beginning when I was...

  15. Evaluation of Waste Heat Recovery and Utilization from Residential Appliances and Fixtures

    SciTech Connect (OSTI)

    Tomlinson, John J [ORNL; Christian, Jeff [Oak Ridge National Laboratory (ORNL); Gehl, Anthony C [ORNL

    2012-09-01T23:59:59.000Z

    Executive Summary In every home irrespective of its size, location, age, or efficiency, heat in the form of drainwater or dryer exhaust is wasted. Although from a waste stream, this energy has the potential for being captured, possibly stored, and then reused for preheating hot water or air thereby saving operating costs to the homeowner. In applications such as a shower and possibly a dryer, waste heat is produced at the same time as energy is used, so that a heat exchanger to capture the waste energy and return it to the supply is all that is needed. In other applications such as capturing the energy in drainwater from a tub, dishwasher, or washing machine, the availability of waste heat might not coincide with an immediate use for energy, and consequently a heat exchanger system with heat storage capacity (i.e. a regenerator) would be necessary. This study describes a two-house experimental evaluation of a system designed to capture waste heat from the shower, dishwasher clothes washer and dryer, and to use this waste heat to offset some of the hot water energy needs of the house. Although each house was unoccupied, they were fitted with equipment that would completely simulate the heat loads and behavior of human occupants including operating the appliances and fixtures on a demand schedule identical to Building American protocol (Hendron, 2009). The heat recovery system combined (1) a gravity-film heat exchanger (GFX) installed in a vertical section of drainline, (2) a heat exchanger for capturing dryer exhaust heat, (3) a preheat tank for storing the captured heat, and (4) a small recirculation pump and controls, so that the system could be operated anytime that waste heat from the shower, dishwasher, clothes washer and dryer, and in any combination was produced. The study found capturing energy from the dishwasher and clothes washer to be a challenge since those two appliances dump waste water over a short time interval. Controls based on the status of the dump valve on these two appliances would have eliminated uncertainty in knowing when waste water was flowing and the recovery system operated. The study also suggested that capture of dryer exhaust heat to heat incoming air to the dryer should be examined as an alternative to using drying exhaust energy for water heating. The study found that over a 6-week test period, the system in each house was able to recover on average approximately 3000 W-h of waste heat daily from these appliance and showers with slightly less on simulated weekdays and slightly more on simulated weekends which were heavy wash/dry days. Most of these energy savings were due to the shower/GFX operation, and the least savings were for the dishwasher/GFX operation. Overall, the value of the 3000 W-h of displaced energy would have been $0.27/day based on an electricity price of $.09/kWh. Although small for today s convention house, these savings are significant for a home designed to approach maximum affordable efficiency where daily operating costs for the whole house are less than a dollar per day. In 2010 the actual measured cost of energy in one of the simulated occupancy houses which waste heat recovery testing was undertaken was $0.77/day.

  16. COOKING APPLIANCE USE IN CALIFORNIA HOMES DATA COLLECTED FROM A WEB-BASED SURVEY

    SciTech Connect (OSTI)

    Klug, Victoria; Lobscheid, Agnes; Singer, Brett

    2011-08-01T23:59:59.000Z

    Cooking of food and use of natural gas cooking burners generate pollutants that can have substantial impacts on residential indoor air quality. The extent of these impacts depends on cooking frequency, duration and specific food preparation activities in addition to the extent to which exhaust fans or other ventilation measures (e.g. windows) are used during cooking. With the intent of improving our understanding of indoor air quality impacts of cooking-related pollutants, we created, posted and advertised a web-based survey about cooking activities in residences. The survey included questions similar to those in California's Residential Appliance Saturation Survey (RASS), relating to home, household and cooking appliance characteristics and weekly patterns of meals cooked. Other questions targeted the following information not captured in the RASS: (1) oven vs. cooktop use, the number of cooktop burners used and the duration of burner use when cooking occurs, (2) specific cooking activities, (3) the use of range hood or window to increase ventilation during cooking, and (4) occupancy during cooking. Specific cooking activity questions were asked about the prior 24 hours with the assumption that most people are able to recollect activities over this time period. We examined inter-relationships among cooking activities and patterns and relationships of cooking activities to household demographics. We did not seek to obtain a sample of respondents that is demographically representative of the California population but rather to inexpensively gather information from homes spanning ranges of relevant characteristics including the number of residents and presence or absence of children. This report presents the survey, the responses obtained, and limited analysis of the results.

  17. Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

    SciTech Connect (OSTI)

    Senaratne, C. L.; Kouvetakis, J. [Department of Chemistry and Biochemistry, Arizona State University, Tempe, Arizona 85287-1604 (United States); Gallagher, J. D.; Jiang, Liying; Smith, D. J.; Menéndez, J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Aoki, Toshihiro [LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, Arizona 85287-1704 (United States)

    2014-10-07T23:59:59.000Z

    Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ? 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ? 0.06, the CVD precursors used were digermane Ge?H? and deuterated stannane SnD?. For y ? 0.06, the Ge precursor was changed to trigermane Ge?H?, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge?H?? as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 ?m, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

  18. Presidential Orders Executive Order 31

    E-Print Network [OSTI]

    Yetisgen-Yildiz, Meliha

    1 Presidential Orders Executive Order 31 Non-discrimination and Affirmative Action 1. Non. As permitted by applicable law, the University will take affirmative action to ensure equality of opportunity

  19. Recommended GE Curriculum for the BSEE Majors

    E-Print Network [OSTI]

    Ravikumar, B.

    Recommended GE Curriculum for the BSEE Majors Area Subjects Suggested GE Courses Courses Actual units GE Units A. Communication and Critical Thinking (9) A.2. Fund. of Communication ENGL 101 4 4 A.3, Theatre, Dance and Music and Film Select from the GE C.1 list in the SSU Catalog 3 3 C.2. Literature

  20. 2014-04-30 Public Meeting Agenda: Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    This document is the agenda for the Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances public meeting being held on April 30, 2014.

  1. 2014-04-30 Public Meeting Presentation Slides: Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    These documents contain slide decks presented at the Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances public meeting held on April 30, 2014.

  2. GeSi intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia)

    E-Print Network [OSTI]

    Ge­Si intermixing in Ge quantum dots on Si,,001... and Si,,111... F. Boscherinia) Laboratori December 1999 Exploiting Ge K-edge x-ray absorption spectroscopy we provide direct evidence of Si­Ge intermixing in self-organized strained and unstrained Ge quantum dots on Si, and provide a quantitative

  3. Nonlithographic epitaxial SnxGe1x dense nanowire arrays grown on Ge,,001...

    E-Print Network [OSTI]

    Atwater, Harry

    Nonlithographic epitaxial SnxGe1Àx dense nanowire arrays grown on Ge,,001... Regina Ragan-thick SnxGe1 x /Ge(001) epitaxial films with 0 x 0.085 by molecular-beam epitaxy. These films evolve during growth into a dense array of SnxGe1 x nanowires oriented along 001 , as confirmed by composition contrast

  4. Analysis of Potential Energy Saving and CO2 Emission Reduction of Home Appliances and Commercial Equipments in China

    SciTech Connect (OSTI)

    Zhou, Nan; Fridley, David; McNeill, Michael; Zheng, Nina; Letschert, Virginie; Ke, Jing; Saheb, Yamina

    2010-06-07T23:59:59.000Z

    China is now the world's largest producer and consumer of household appliances and commercial equipment. To address the growth of electricity use of the appliances, China has implemented a series of minimum energy performance standards (MEPS) for 30 appliances, and voluntary energy efficiency label for 40 products. Further, in 2005, China started a mandatory energy information label that covers 19 products to date. However, the impact of these standard and labeling programs and their savings potential has not been evaluated on a consistent basis. This research involved modeling to estimate the energy saving and CO{sub 2} emission reduction potential of the appliances standard and labeling program for products for which standards are currently in place, or under development and those proposed for development in 2010. Two scenarios that have been developed differ primarily in the pace and stringency of MEPS development. The 'Continued Improvement Scenario' (CIS) reflects the likely pace of post-2009 MEPS revisions, and the likely improvement at each revision step considering the technical limitation of the technology. The 'Best Practice Scenario' (BPS) examined the potential of an achievement of international best practice MEPS in 2014. This paper concludes that under the 'CIS' of regularly scheduled MEPS revisions to 2030, cumulative electricity consumption could be reduced by 9503 TWh, and annual CO{sub 2} emissions would be 16% lower than in the frozen efficiency scenario. Under a 'BPS' scenario for a subset of products, cumulative electricity savings would be 5450 TWh and annual CO{sub 2} emissions reduction would be 35% lower than in the frozen scenario.

  5. Highly strain-relaxed ultrathin SiGe-on-insulator structure by Ge condensation process combined with H{sup +} irradiation and postannealing

    SciTech Connect (OSTI)

    Miyao, Masanobu; Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh; Enokida, Toyotsugu; Hagino, Hiroyasu; Ninomiya, Masaharu; Nakamae, Masahiko [Department of Electronics, Kyushu University, 6-10-1 Hakozaki, Fukuoka 812-8581 (Japan); Analysis and Evaluation Center, Fukuryo Semicon Engineering Corporation, 1-1-1 Imajuku-Higashi, Fukuoka 819-0192 (Japan); SUMCO Corporation, 314 Nishisangao, Noda, Chiba 278-0015 (Japan); SUMCO Corporation, 2201 Oaza Kamioda, Kohoku-cho, Kishima-gun, Saga 849-0597 (Japan)

    2006-04-03T23:59:59.000Z

    Strain-relaxation process of SiGe-on-insulator (SGOI) structures in the oxidation induced Ge condensation method has been investigated as a function of the SiGe thickness. Complete relaxation was obtained for thick SGOI layers (>100 nm). However, the relaxation rates abruptly decreased with decreasing SiGe thickness below 50 nm, i.e., the relaxation rate of 30% at 30 nm SiGe thickness. In order to improve this phenomenon, a method combined with H{sup +} irradiation with a medium dose (5x10{sup 15} cm{sup -2}) and postannealing (1200 deg. C) has been developed. This successfully achieved the high relaxation rate (70%) in the ultrathin SGOI (30 nm)

  6. Analysis of Potential Energy Saving and CO2 Emission Reduction of Home Appliances and Commercial Equipments in China

    SciTech Connect (OSTI)

    Zhou, Nan; Fridley, David; McNeil, Michael; Zheng, Nina; Letschert, Virginie; Ke, Jing

    2011-04-01T23:59:59.000Z

    China has implemented a series of minimum energy performance standards (MEPS) for over 30 appliances, voluntary energy efficiency label for 40 products and a mandatory energy information label that covers 19 products to date. However, the impact of these programs and their savings potential has not been evaluated on a consistent basis. This paper uses modeling to estimate the energy saving and CO{sub 2} emission reduction potential of the appliances standard and labeling program for products for which standards are currently in place, under development or those proposed for development in 2010 under three scenarios that differ in the pace and stringency of MEPS development. In addition to a baseline 'Frozen Efficiency' scenario at 2009 MEPS level, the 'Continued Improvement Scenario' (CIS) reflects the likely pace of post-2009 MEPS revisions, and the likely improvement at each revision step. The 'Best Practice Scenario' (BPS) examined the potential of an achievement of international best practice efficiency in broad commercial use today in 2014. This paper concludes that under 'CIS', cumulative electricity consumption could be reduced by 9503 TWh, and annual CO{sub 2} emissions of energy used for all 37 products would be 16% lower than in the frozen efficiency scenario. Under a 'BPS' scenario for a subset of products, cumulative electricity savings would be 5450 TWh and annual CO{sub 2} emissions reduction of energy used for 11 appliances would be 35% lower.

  7. NATURAL GAS VARIABILITY IN CALIFORNIA: ENVIRONMENTAL IMPACTS AND DEVICE PERFORMANCE EXPERIMENTAL EVALUATION OF POLLUTANT EMISSIONS FROM RESIDENTIAL APPLIANCES

    SciTech Connect (OSTI)

    Singer, Brett C.; Apte, Michael G.; Black, Douglas R.; Hotchi, Toshifumi; Lucas, Donald; Lunden, Melissa M.; Mirer, Anna G.; Spears, Michael; Sullivan, Douglas P.

    2009-12-01T23:59:59.000Z

    The effect of liquefied natural gas on pollutant emissions was evaluated experimentally with used and new appliances in the laboratory and with appliances installed in residences, targeting information gaps from previous studies. Burner selection targeted available technologies that are projected to comprise the majority of installed appliances over the next decade. Experiments were conducted on 13 cooktop sets, 12 ovens, 5 broiler burners, 5 storage water heaters, 4 forced air furnaces, 1 wall furnace, and 6 tankless water heaters. Air-free concentrations and fuel-based emission factors were determined for carbon monoxide, nitrogen oxides, nitrogen dioxide, and the number of (predominantly ultrafine) particles over complete burns?including transient effects (device warm-up and intermittent firing of burners) following ignition--and during more stable end-of-burn conditions. Formaldehyde was measured over multi-burn cycles. The baseline fuel was Northern California line gas with Wobbe number (a measure of fuel energy delivery rate) of 1320-1340; test fuels had Wobbe numbers of roughly 1390 and 1420, and in some cases 1360. No ignition or operational problems were observed during test fuel use. Baseline emissions varied widely across and within burner groups and with burner operational mode. Statistically significant emissions changes were observed for some pollutants on some burners.

  8. Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers

    SciTech Connect (OSTI)

    Valakh, M. Ya.; Lytvyn, P. M.; Nikolenko, A. S.; Strelchuk, V. V. [V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, pr. Nauki 45, 03680 Kyiv (Ukraine); Krasilnik, Z. F.; Lobanov, D. N.; Novikov, A. V. [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation)

    2010-04-05T23:59:59.000Z

    Raman spectroscopy and atomic-force microscopy were applied to study the morphology of nanoislands grown on strained Si{sub 1-x}Ge{sub x} sublayers. It was shown that the growth of nanoislands on strained Si{sub 1-x}Ge{sub x} sublayer not only induces the effect of their spatial ordering but also enhances the role of interdiffusion processes. Unusual high island volume increase during the epitaxy is explained by anomalous strong material diffusion from the sublayer into the islands, induced by nonuniform field of elastic strains.

  9. Impacts of China's Current Appliance Standards and LabelingProgram to 2020

    SciTech Connect (OSTI)

    Fridley, David; Aden, Nathaniel; Zhou, Nan; Lin, Jiang

    2007-03-03T23:59:59.000Z

    The report summarizes the history and nature of China sstandardsand labeling program in the Introduction in Section 1. Trends indomestic production, exports, penetration rates, unit energy consumptionand the history of S&L technical levels by product are discussed ingreat detail in Section 2. The national energy impactsanalysis found inSection 3 concludes that overall China s standards and labeling programsreduce total electricity consumption in 2020 by an annual 106 TWh, or 16percent of what would otherwise been expected in that year in the absenceof standards and labeling programs.In total, the report concludes thatthe S&L programs currently in place in China are expected to save acumulative 1143 TWh by 2020, or 9 percent of the cumulative consumptionof residential electricity to that year. In 2020 alone, annual savingsare expected to be equivalent to 11 percent of residential electricityuse. In average generation terms, this is equivalent to 27 1-GW coalfired plants that would have required around 75 million tonnes of coal tooperate.In comparison, savings from the US appliance standards programalone is expected to save 10 percent of residential electricityconsumption in 2020.

  10. Rolling up SiGe on insulator

    SciTech Connect (OSTI)

    Cavallo, F.; Songmuang, R.; Ulrich, C.; Schmidt, O. G. [Max-Planck-Institut fuer Festkoerperforschung, Heisenbergstrasse 1, D-70569 Stuttgart (Germany)

    2007-05-07T23:59:59.000Z

    SiGe on insulator films of 10-50 nm thickness are fabricated by Ge condensation applying different oxidation times. The layers are released from the substrate by selectively etching the insulator film. Due to the varying Ge composition, the layers bend downward toward the substrate surface and roll up into microtubes. Depending on the Ge condensation, the strain distribution in the SiGe layers varies and allows a scaling of the tube diameters between 1 and 4 {mu}m. Assuming pseudomorphic SiGe layers, the tube diameters are smaller than expected from continuum mechanical theory. This suggests the occurrence of additional strain in the oxidized films.

  11. Structural Changes in Vitreous GeSe4 under Pressure

    SciTech Connect (OSTI)

    Skinner L. B.; Parise J.; Benmore, C.J,; Antao, S.; Soignard, E.; Amin, S.A.; Bychkov, E.; Rissi, E. and Yarger, J.L.

    2011-11-21T23:59:59.000Z

    High-energy X-ray diffraction experiments have been performed on GeSe{sub 4} glass up to pressures of 8.6 GPa, and the equation of state has been measured up to 10 GPa. The X-ray structure factors reveal a decrease in the first sharp diffraction peak intensity and broadening with pressure, which signifies a break-up of the intermediate range order in the glass. In contrast, the principal peak in the structure factor shows an increase in intensity and a sharpening with pressure, which is attributed to an increase in extended range order and coherence of the compacted units. The average nearest neighbor coordination number is found to remain constant in GeSe{sub 4} glass (within experimental error) over the pressure range measured. This is in contrast with the gradual increase found in GeSe{sub 2} glass. Rather, in GeSe{sub 4} glass the densification mechanism is shown to be associated with large inward shifts of the second neighbor and higher coordination shells. These features appear as additional correlations at 3.3 and 5.3 {angstrom} in the differences taken between adjacent pair distribution functions with increasing pressure.

  12. Acoustoelectric effects in very high-mobility p-SiGe/Ge/SiGe heterostructure

    SciTech Connect (OSTI)

    Drichko, I. L.; Diakonov, A. M.; Lebedeva, E. V.; Smirnov, I. Yu. [A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation); Mironov, O. A. [Warwick SEMINANO R and D Centre, University of Warwick Science Park, Coventry CV4 7EZ (United Kingdom); Kummer, M.; Kaenel, H. von [Laboratorium fuer Festkoerperphysik ETH Zuerich, CH-8093 Zuerich (Switzerland); EpiSpeed SA, Technoparkstrasse 1, CH-8005 Zuerich (Switzerland)

    2009-11-01T23:59:59.000Z

    Measurement results of the acoustoelectric effects [surface acoustic waves (SAW) attenuation and velocity] in a high-mobility p-SiGe/Ge/SiGe structure are presented. The structure was low-energy plasma-enhanced chemical vapor deposition grown with a two-dimensional (2D) channel buried in the strained Ge layer. The measurements were performed as a function of temperature (1.5-4.2 K) and magnetic field (up to 8.4 T) at different SAW intensities at frequencies 28 and 87 MHz. Shubnikov-de Haas-like oscillations of both SAW attenuation and the velocity change have been observed. Hole density and mobility, effective mass, quantum and transport relaxation times, as well as the Dingle temperature were measured with a method free of electric contacts. The effect of heating of the 2D hole gas by the electric field of the SAW was investigated. Energy relaxation time tau{sub e}psilon and the deformation potential constant determined.

  13. PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON

    E-Print Network [OSTI]

    Kundu, Debasis

    PROBABILITY OF CORRECT SELECTION OF GAMMA VERSUS GE OR WEIBULL VERSUS GE BASED ON LIKELIHOOD RATIO proposes the use of likelihood ratio statistic in choosing between gamma and GE models or between Weibull and GE models. Probability of correct selec- tions are obtained using Monte Carlo simulations for various

  14. The polygallides: Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2}

    SciTech Connect (OSTI)

    Peter, Sebastian C. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore 560064 (India); Malliakas, Christos D. [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Nakotte, Heinze; Kothapilli, Karunakar [Physics Department, New Mexico State University, Las Cruces, NM 88003 (United States); Los Alamos Neutron Science Center, Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, Mumbai Centre, BARC, R-5 Shed, Trombay, Mumbai 400085 (India); Schultz, Arthur J. [X-Ray Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States); Kanatzidis, Mercouri G., E-mail: m-kanatzidis@northwestern.edu [Department of Chemistry, Northwestern University, 2145N. Sheridan Road, Evanston, IL 60208 (United States); Materials Science Division, Argonne National Laboratory, Argonne, IL 60439 (United States)

    2012-03-15T23:59:59.000Z

    Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} were obtained from reactions of Yb and Ge in excess liquid gallium. The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was refined using X-ray and neutron diffraction data on selected single crystals. Yb{sub 3}Ga{sub 7}Ge{sub 3} crystallizes in the monoclinic space group C2/c with lattice constants a=12.2261(20) Angstrom-Sign , b=10.7447(20) Angstrom-Sign , c=8.4754(17) Angstrom-Sign and {beta}=110.288(30) Degree-Sign (neutron diffraction data). The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} is an intergrowth of planar layers of YbGa{sub x}Ge{sub y} and puckered layers of (Ge){sub n}. YbGa{sub 4}Ge{sub 2} crystallizes in a modified PuGa{sub 6} structure type in the tetragonal polar space group I4cm with lattice constants a=b=5.9874(6) Angstrom-Sign and c=15.1178(19) Angstrom-Sign . The structure of YbGa{sub 4}Ge{sub 2} is an intergrowth of puckered Ga layers and puckered Ga{sub x}Ge{sub y} layers with Yb atoms residing within the channels formed by the connection of the two layers. Physical properties, resistivity ({rho}), magnetic susceptibility ({chi}) and specific heat (C) were measured for Yb{sub 3}Ga{sub 7}Ge{sub 3}. No magnetic ordering was observed. It was found that at low temperatures, {rho} varied as T{sup 2} and C{proportional_to}T, indicating Fermi-liquid regime in Yb{sub 3}Ga{sub 7}Ge{sub 3} at low temperatures. - Graphical abstract: The compounds Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are obtained from reactions of Yb and Ge in excess liquid gallium. Highlights: Black-Right-Pointing-Pointer Yb{sub 3}Ga{sub 7}Ge{sub 3} and YbGa{sub 4}Ge{sub 2} are two new polygallides. Black-Right-Pointing-Pointer The crystal structure of Yb{sub 3}Ga{sub 7}Ge{sub 3} was established using neutron diffraction data. Black-Right-Pointing-Pointer YbGa{sub 4}Ge{sub 2} is one of the rare polar intermetallic compounds. Black-Right-Pointing-Pointer The physical properties of Yb{sub 3}Ga{sub 7}Ge{sub 3} point to a Fermi-liquid regime at low temperature.

  15. Max Tech Appliance Design: Potential for Maximizing U.S. Energy Savings through Standards

    SciTech Connect (OSTI)

    Garbesi, Karina; Desroches, Louis-Benoit; Bolduc, Christopher; Burch, Gabriel; Hosseinzadeh, Griffin; Saltiel, Seth

    2011-05-06T23:59:59.000Z

    This study surveyed the technical potential for efficiency improvements in 150 categories of appliances and equipment representing 33 quads of primary energy use across the US economy in 2010 and (1) documented efficient product designs, (2) identified the most promising cross-cutting strategies, and (3) ranked national energy savings potential by end use. Savings were estimated using a method modeled after US Department of Energy priority-setting reports - simplified versions of the full technical and economic analyses performed for rulemakings. This study demonstrates that large savings are possible by replacing products at the end-of-life with ultra-efficient models that use existing technology. Replacing the 50 top energy-saving end-uses (constituting 30 quads of primary energy consumption in 2010) with today's best-on-market equivalents would save {approx}200 quads of US primary energy over 30 years (25% of consumption anticipated there from). For the 29 products for maximum feasible savings potential could be estimated, the savings were twice as high. These results demonstrate that pushing ultra-efficient products to market could significantly escalate carbon emission reductions and is a viable strategy for sustaining large emissions reductions through standards. The results of this analysis were used by DOE for new coverage prioritization, to identify key opportunities for product prototyping and market development, and will leverage future standards rulemakings by identifying the full scope of maximum feasible technology options. High leverage products include advances lighting systems, HVAC, and televisions. High leverage technologies include electronic lighting, heat pumps, variable speed motors, and a host of controls-related technologies.

  16. A Global Review of Incentive Programs to Accelerate Energy-Efficient Appliances and Equipment

    SciTech Connect (OSTI)

    de la Rue du Can, Stephane; Phadke, Amol; Leventis, Greg; Gopal, Anand

    2013-08-01T23:59:59.000Z

    Incentive programs are an essential policy tool to move the market toward energy-efficient products. They offer a favorable complement to mandatory standards and labeling policies by accelerating the market penetration of energy-efficient products above equipment standard requirements and by preparing the market for increased future mandatory requirements. They sway purchase decisions and in some cases production decisions and retail stocking decisions toward energy-efficient products. Incentive programs are structured according to their regulatory environment, the way they are financed, by how the incentive is targeted, and by who administers them. This report categorizes the main elements of incentive programs, using case studies from the Major Economies Forum to illustrate their characteristics. To inform future policy and program design, it seeks to recognize design advantages and disadvantages through a qualitative overview of the variety of programs in use around the globe. Examples range from rebate programs administered by utilities under an Energy-Efficiency Resource Standards (EERS) regulatory framework (California, USA) to the distribution of Eco-Points that reward customers for buying efficient appliances under a government recovery program (Japan). We found that evaluations have demonstrated that financial incentives programs have greater impact when they target highly efficient technologies that have a small market share. We also found that the benefits and drawbacks of different program design aspects depend on the market barriers addressed, the target equipment, and the local market context and that no program design surpasses the others. The key to successful program design and implementation is a thorough understanding of the market and effective identification of the most important local factors hindering the penetration of energy-efficient technologies.

  17. Modeling of multilayer SiGe based thin film solar cells

    SciTech Connect (OSTI)

    Christoffel, E.; Debarge, L.; Slaoui, A. [CNRS, Strasbourg (France). Lab. PHASE

    1997-12-31T23:59:59.000Z

    Simulations using PC1D have been performed to demonstrate the viability of crystalline SiGe alloys implementation in thin film solar cells. An optimized structure would consist of a p-type doped SiGe layer, capped with a Si p-n junction at the top, and a Si BSF at the bottom. Further refinements in such cell structure include a gradual compositional profile of the SiGe alloy layer. Compared to a conventional Si thin film cell, up to 5% relative efficiency gain is demonstrated, for a 20 {micro}m thick SiGe layer with less than 10% Ge content, p-type doped to more than 1 10{sup 17} cm{sup {minus}3}, and a realistic minority carriers diffusion length of the order of the layer thickness.

  18. Understanding and engineering of NiGe/Ge junction formed by phosphorus ion implantation after germanidation

    SciTech Connect (OSTI)

    Oka, Hiroshi, E-mail: oka@asf.mls.eng.osaka-u.ac.jp; Minoura, Yuya; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji [Department of Material and Life Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan)

    2014-08-11T23:59:59.000Z

    Modulation of the effective electron Schottky barrier height (eSBH) of NiGe/Ge contacts induced by phosphorus ion implantation after germanide formation was investigated by considering local inhomogeneity in the eSBH. Systematic studies of NiGe/Ge contact devices having various germanide thicknesses and ion implantation areas indicated the threshold dopant concentration at the NiGe/Ge interface required for eSBH modulation and negligible dopant diffusion even at NiGe/Ge interface during drive-in annealing, leading to variation in the eSBH between the bottom and sidewall portions of the NiGe regions. Consequently, this method makes it possible to design source/drain contacts with low-resistivity Ohmic and ideal rectifying characteristics for future Ge-based transistors.

  19. Ex Parte Memo_September 26, 2013_RF TP Icemaker Comments (00031507...

    Broader source: Energy.gov (indexed) [DOE]

    Barhydt, DOE John Cymbalsky, DOE Michael Kido, DOE Tim Sutherland, Navigant Bill Brown, GE Appliances and Lighting Andrew Krause, GE Appliances and Lighting Travis Perkins,...

  20. "Table HC13.10 Home Appliances Usage Indicators by South Census Region, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances Housing

  1. "Table HC14.10 Home Appliances Usage Indicators by West Census Region, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances78 Water3.90

  2. "Table HC15.10 Home Appliances Usage Indicators by Four Most Populated States, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances7835 Housing0

  3. "Table HC15.9 Home Appliances Characteristics by Four Most Populated States, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances7835258

  4. "Table HC3.10 Home Appliances Usage Indicators by Owner-Occupied Housing Unit, 2005"

    U.S. Energy Information Administration (EIA) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere IRaghuraji Agro IndustriesTownDells,1 U.S. Department of Energygasoline4 Space2.9 Home Appliances78352580 Home

  5. SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication

    E-Print Network [OSTI]

    SiGe-On-Insulator (SGOI) Technology and MOSFET Fabrication Zhiyuan Cheng, E. A. Fitzgerald, and D with less defects in SiGe film, but the SiGe film uniformity is inferior. "Smart-cut" approach has better control on the SiGe film thickness and uniformity, and is applicable to wider Ge content range of the SiGe

  6. Electroluminescence from Strained Ge membranes and Implications for an Efficient Si-Compatible Laser

    E-Print Network [OSTI]

    Nam, Donguk; Cheng, Szu-Lin; Roy, Arunanshu; Huang, Kevin Chih-Yao; Brongersma, Mark; Nishi, Yoshio; Saraswat, Krishna

    2012-01-01T23:59:59.000Z

    We demonstrate room-temperature electroluminescence (EL) from light-emitting diodes (LED) on highly strained germanium (Ge) membranes. An external stressor technique was employed to introduce a 0.76% bi-axial tensile strain in the active region of a vertical PN junction. Electrical measurements show an on-off ratio increase of one order of magnitude in membrane LEDs compared to bulk. The EL spectrum from the 0.76% strained Ge LED shows a 100nm redshift of the center wavelength because of the strain-induced direct band gap reduction. Finally, using tight-binding and FDTD simulations, we discuss the implications for highly efficient Ge lasers.

  7. Growth of high-quality GaAs on Ge/Si{sub 1-x}Ge{sub x} on nanostructured silicon substrates

    SciTech Connect (OSTI)

    Vanamu, G.; Datye, A.K.; Dawson, R.; Zaidi, Saleem H. [Department of Chemical and Nuclear Engineering, University of New Mexico, Albuquerque, New Mexico 87131 (United States) and Center for Micro-Engineered Materials, University of New Mexico, Albuquerque, New Mexico 87131 (United States); Center for High Technology Materials, 1313 Goddard SE, Albuquerque, New Mexico 87106 (United States); Gratings, Inc., 2700 B Broadbent Parkway, NE, Albuquerque, New Mexico 87107 (United States)

    2006-06-19T23:59:59.000Z

    Heteroepitaxial growth of GaAs/Ge/SiGe films on submicrostructured Si substrates is reported. One-dimensional, nanometer-linewidth, submicrometer period features were fabricated in Si substrates using interferometric lithography, reactive ion etching, and wet-chemical etching techniques. The quality of the GaAs layers grown on these structures was investigated using high-resolution x-ray diffraction, transmission electron microscopy, scanning electron microscopy, photoluminescence, and etch pit density measurements. The defect density of GaAs epilayers grown on submicrostructured Si at {approx}6x10{sup 5} cm{sup -2} was two orders of magnitude lower compared with that grown on planar silicon. The optical quality of the GaAs/Ge/SiGe on submicrostructured Si was comparable to that of single crystal GaAs.

  8. About GE Global Research Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMForms About Become agovEducationWelcome toAboutAbout GE Global Research

  9. Heat Transfer in GE Jet Engines | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cn SunnybankD.jpgHanfordDepartment ofHeat Transfer in GE Jet Engines Click to

  10. Photoconductivity of Si/Ge multilayer structures with Ge quantum dots pseudomorphic to the Si matrix

    SciTech Connect (OSTI)

    Talochkin, A. B., E-mail: tal@thermo.isp.nsc.ru; Chistokhin, I. B. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2011-07-15T23:59:59.000Z

    Longitudinal photoconductivity spectra of Si/Ge multilayer structures with Ge quantum dots grown pseudomorphically to the Si matrix are studied. Lines of optical transitions between hole levels of quantum dots and Si electronic states are observed. This allowed us to construct a detailed energy-level diagram of electron-hole levels of the structure. It is shown that hole levels of pseudomorphic Ge quantum dots are well described by the simplest 'quantum box' model using actual sizes of Ge islands. The possibility of controlling the position of the long-wavelength photosensitivity edge by varying the growth parameters of Si/Ge structures with Ge quantum dots is determined.

  11. Advanced Analytics | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWP TWP Related LinksATHENAAdministrative80-AA (01-2015)GE

  12. Thermal Imaging Technologies | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Enables Advanced Thermal Imaging An error occurred. Unable to execute Javascript. Bryan Whalen in the Electronics Cooling Lab at GE Global Research recorded this thermo...

  13. Limited-area growth of Ge and SiGe on Si

    E-Print Network [OSTI]

    Kim, Meekyung, Ph. D. Massachusetts Institute of Technology

    2011-01-01T23:59:59.000Z

    The goal of this thesis is to develop and understand processing conditions that improve the surface morphology and reduce the dislocation density in limited-area heteroepitaxy of Ge and SiGe on Si (100) substrates. Low ...

  14. MOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels

    E-Print Network [OSTI]

    Fitzgerald, Eugene A.

    Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with ...

  15. Creating and Implementing a Regularized Monitoring and EnforcementSystem for China's Mandatory Standards and Energy Information Label forAppliances

    SciTech Connect (OSTI)

    Lin, Jiang

    2007-03-01T23:59:59.000Z

    China has developed a comprehensive program of energy efficiency standards and labels for household appliances. In 1989, China first launched its minimum energy performance standards (MEPS), which are now applied to an extensive list of products. In 1998, China launched a voluntary energy endorsement label, which has grown to cover both energy-saving and water-saving products. And, in 2005, China launched a mandatory energy information label that initially covered two products. CLASP has assisted China in developing 11 minimum energy performance standards (MEPS) for 9 products and endorsement labels for 11 products including: refrigerators; air conditioners; televisions; printers; computers; monitors; fax machines; copiers; DVD/VCD players; external power supplies; and set-top boxes. CLASP has also assisted China in the development of the mandatory energy information label. Increasingly, attention is being placed on maximum energy savings from China's standards and labeling (S&L) efforts in order to meet the recently announced goal of reducing China's energy intensity by 20 percent by 2010 with an interim objective of 4 percent in 2006. China's mandatory standards system is heavily focused on the technical requirements for efficiency performance, but historically, it has lacked administrative and personnel capacity to undertake monitoring and enforcement of these legally binding standards. Similarly, resources for monitoring and enforcement have been quite limited. As a consequence, compliance to both the mandatory standards and the mandatory energy information label is uneven with the potential and likely result of lost energy savings. Thus, a major area for improvement, which could significantly increase overall energy savings, is the creation and implementation of a regularized monitoring system for tracking the compliance to, and enforcement of, mandatory standards and the energy information label in China. CLASP has been working with the China National Institute of Standardization (CNIS), the China Administration for Quality, Supervision, Inspection and Quarantine (AQSIQ) and relevant stakeholders in the industry to develop a stronger system of monitoring and enforcement. In November 2005, CNIS and LBNL (a CLASP implementing partner) with funding from the Energy Foundation jointly organized an international workshop to present the international best practices in S&L monitoring and enforcement. Currently, CNIS is developing a guideline for monitoring and enforcement for appliance standards. With support from METI, CLASP has been able to expand the on-going collaboration with CNIS to include enforcement needs for the mandatory energy information label and to accelerate the progress of the project to develop a more robust monitoring and enforcement for S&L programs in China. This expanded effort has included: (1) Holding an enforcement and monitoring roadmap planning workshop with key S&L stakeholders; (2) Interviews with S&L stakeholders on the need and scope of national compliance tests; (3) Research on past enforcement activities; (4) An analysis of compliance data from the mandatory energy information labeling program; (5) Interviews with stakeholders on the need and scope of testing infrastructure; and (6) Development of a roadmap for future activities. This report summarizes the findings of these activities and identifies the progress that China is making, and can make, toward developing a stronger system of monitoring and enforcement (M&E). In sum, it outlines a vision of moving forward with more vigorous M&E in China.

  16. Massive "spin-2" theories in arbitrary $D \\ge 3$ dimensions

    E-Print Network [OSTI]

    D. Dalmazi; A. L. R. dos Santos; E. L. Mendonça

    2014-08-28T23:59:59.000Z

    Here we show that in arbitrary dimensions $D\\ge 3$ there are two families of second order Lagrangians describing massive "spin-2" particles via a nonsymmetric rank-2 tensor. They differ from the usual Fierz-Pauli theory in general. At zero mass one of the families is Weyl invariant. Such massless theory has no particle content in $D=3$ and gives rise, via master action, to a dual higher order (in derivatives) description of massive spin-2 particles in $D=3$ where both the second and the fourth order terms are Weyl invariant, contrary to the linearized New Massive Gravity. However, only the fourth order term is invariant under arbitrary antisymmetric shifts. Consequently, the antisymmetric part of the tensor $e_{[\\mu\

  17. Enhanced Hole Mobility in High Ge Content Asymmetrically Strained-SiGe p-MOSFETs

    E-Print Network [OSTI]

    Chléirigh, C. Ni

    The hole mobility characteristics of ?110? /(100)-oriented asymmetrically strained-SiGe p-MOSFETs are studied.

  18. Energy and CO2 Efficient Scheduling of Smart Home Appliances Kin Cheong Sou, Mikael Kordel, Jonas Wu, Henrik Sandberg and Karl Henrik Johansson

    E-Print Network [OSTI]

    Johansson, Karl Henrik

    Energy and CO2 Efficient Scheduling of Smart Home Appliances Kin Cheong Sou, Mikael K¨ordel, Jonas Wu, Henrik Sandberg and Karl Henrik Johansson Abstract-- A major goal of smart grid technology (e.g., smart meters) is to provide consumers with demand response signals such as electricity tariff and CO2

  19. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. R. C.; Ramos, M. M. D.; Gomes, M. J. M. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Buljan, M. [Ruder Boskovic Institute, Bijenicka cesta 54, Zagreb 10000 (Croatia); Chahboun, A. [University of Minho, Centre of Physics and Physics Department, Braga 4710-057 (Portugal); Physics Department, FST Tanger, Tanger BP 416 (Morocco); Roldan, M. A.; Molina, S. I. [Departamento de Ciencia de los Materiales e Ing. Metalurgica y Q. I., Universidad de Cadiz, Cadiz (Spain); Bernstorff, S. [Sincrotrone Trieste, SS 14 km163, 5, Basovizza 34012 (Italy); Varela, M.; Pennycook, S. J. [Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States); Barradas, N. P.; Alves, E. [Instituto Superior Tecnico e Instituto Tecnologico e Nuclear-, EN10, Sacavem 2686-953 (Portugal)

    2012-04-01T23:59:59.000Z

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  20. Tuning the properties of Ge-quantum dots superlattices in amorphous silica matrix through deposition conditions

    SciTech Connect (OSTI)

    Pinto, S. [University of Minho, Portugal; Roldan Gutierrez, Manuel A [ORNL; Ramos, M. M.D. [University of Minho, Portugal; Gomes, M.J.M. [University of Minho, Portugal; Molina, S. I. [Universidad de Cadiz, Spain; Pennycook, Stephen J [ORNL; Varela del Arco, Maria [ORNL; Buljan, M. [R. Boskovic Institute, Zagreb, Croatia; Barradas, N. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Alves, E. [Instituto Tecnologico e Nuclear (ITN), Lisbon, Portugal; Chahboun, A. [FST Tanger, Morocco; Bernstorff, S. [Sincrotrone Trieste, Basovizza, Italy

    2012-01-01T23:59:59.000Z

    In this work, we investigate the structural properties of Ge quantum dot lattices in amorphous silica matrix, prepared by low-temperature magnetron sputtering deposition of (Ge+SiO{sub 2})/SiO{sub 2} multilayers. The dependence of quantum dot shape, size, separation, and arrangement type on the Ge-rich (Ge + SiO{sub 2}) layer thickness is studied. We show that the quantum dots are elongated along the growth direction, perpendicular to the multilayer surface. The size of the quantum dots and their separation along the growth direction can be tuned by changing the Ge-rich layer thickness. The average value of the quantum dots size along the lateral (in-plane) direction along with their lateral separation is not affected by the thickness of the Ge-rich layer. However, the thickness of the Ge-rich layer significantly affects the quantum dot ordering. In addition, we investigate the dependence of the multilayer average atomic composition and also the quantum dot crystalline quality on the deposition parameters.

  1. Energy-Efficiency Labels and Standards: A Guidebook forAppliances, Equipment, and Lighting - 2nd Edition

    SciTech Connect (OSTI)

    Wiel, Stephen; McMahon, James E.

    2005-04-28T23:59:59.000Z

    Energy-performance improvements in consumer products are an essential element in any government's portfolio of energy-efficiency and climate change mitigation programs. Governments need to develop balanced programs, both voluntary and regulatory, that remove cost-ineffective, energy-wasting products from the marketplace and stimulate the development of cost-effective, energy-efficient technology. Energy-efficiency labels and standards for appliances, equipment, and lighting products deserve to be among the first policy tools considered by a country's energy policy makers. The U.S. Agency for International Development (USAID) and several other organizations identified on the cover of this guidebook recognize the need to support policy makers in their efforts to implement energy-efficiency standards and labeling programs and have developed this guidebook, together with the Collaborative Labeling and Appliance Standards Program (CLASP), as a primary reference. This second edition of the guidebook was prepared over the course of the past year, four years after the preparation of the first edition, with a significant contribution from the authors and reviewers mentioned previously. Their diligent participation helps maintain this book as the international guidance tool it has become. The lead authors would like to thank the members of the Communications Office of the Environmental Energy Technologies Division, Lawrence Berkeley National Laboratory for their support in the development, production, and distribution of the guidebook. This guidebook is designed as a manual for government officials and others around the world responsible for developing, implementing, enforcing, monitoring, and maintaining labeling and standards setting programs. It discusses the pros and cons of adopting energy-efficiency labels and standards and describes the data, facilities, and institutional and human resources needed for these programs. It provides guidance on the design, development, implementation, maintenance, and evaluation of the programs and on the design of the labels and standards themselves. In addition, it directs the reader to references and other resources likely to be useful in conducting the activities described and includes a chapter on energy policies and programs that complement appliance efficiency labels and standards. This guidebook attempts to reflect the essential framework of labeling and standards programs. It is the intent of the authors and sponsor to distribute copies of this book worldwide, at no charge, for the general public benefit. The guidebook is also available on the web at www.clasponline.org and may be downloaded to be used intact or piecemeal for whatever beneficial purposes readers may conceive.

  2. Ge{sub 1-x}Mn{sub x} heteroepitaxial quantum dots: Growth, morphology, and magnetism

    SciTech Connect (OSTI)

    Kassim, J.; Nolph, C.; Reinke, P.; Floro, J. [Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904 (United States); Jamet, M. [Institut Nanosciences et Cryogenie/SP2M, CEA-UJF, F-38054 Grenoble (France)

    2013-02-21T23:59:59.000Z

    Heteroepitaxial Ge{sub 1-x}Mn{sub x} quantum dots (QDs) were grown on Si (001) by molecular beam epitaxial co-deposition, with x = 0 to 0.10, in order to explore the interaction between Mn content, surface morphological evolution, and magnetism. Morphological evolution typical of the Ge/Si (001) system was observed, where the effect of Mn on surface morphology is surprisingly minimal at low Mn content, with no obvious surface morphological indicators of second phase formation. As the Mn content increases, secondary phase formation becomes evident, appearing to heterogeneously nucleate on or within Ge QDs. Still higher Mn concentrations lead to extensive second phase formation interspersed with an array of Ge QDs. Although ferromagnetism up to 220 K is observed, likely arising from intermetallic precipitates, there is no clear evidence for room-temperature ferromagnetism associated with a dilute magnetic solution phase.

  3. Control of tensile strain and interdiffusion in Ge/Si(001) epilayers grown by molecular-beam epitaxy

    SciTech Connect (OSTI)

    Luong, T. K. P.; Dau, M. T.; Zrir, M. A.; Le Thanh, V.; Petit, M. [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France)] [Aix-Marseille Université, CNRS CINaM-UMR 7325, F-13288 Marseille Cedex 09 (France); Stoffel, M.; Rinnert, H. [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France)] [Université de Lorraine, Institut Jean Lamour, CNRS UMR 7198, Nancy-Université, BP 70239, 54506 Vandoeuvre-lès-Nancy Cedex (France); Ghrib, A.; El Kurdi, M.; Boucaud, P. [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France)] [Institut d'Electronique Fondamentale, CNRS UMR 8622, Université Paris-Sud, Ba-carett. 220, 91405 Orsay (France); Murota, J. [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)] [Research Institute of Electrical Communications, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan)

    2013-08-28T23:59:59.000Z

    Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Tensile-strained Ge/Si epilayers can be obtained by using the difference of thermal expansion coefficients between Ge and Si. We have combined various surface, structural, and compositional characterizations to investigate the growth mode and the strain state in Ge/Si epilayers grown by molecular-beam epitaxy. The Ge growth was carried out using a two-step approach: a low-temperature growth to produce relaxed and smooth buffer layers, which is followed by a high-temperature growth to get high quality Ge layers. The existence of a substrate temperature window from 260 to 300 °C is evidenced, which allows to completely suppress the Ge/Si Stranski-Krastanov growth. As a consequence of the high temperature growth, a tensile strain lying in the range of 0.22%–0.24% is obtained. Concerning the effect of thermal annealing, it is shown that cyclic annealing may allow increasing the tensile strain up to 0.30%. Finally, we propose an approach to use carbon adsorption to suppress Si/Ge interdiffusion, which represents one of the main obstacles to overcome in order to realize pure Ge-based optoelectronic devices.

  4. Relaxed SiGe Layers with High Ge Content by Compliant Substrates , R.L. Peterson1

    E-Print Network [OSTI]

    Relaxed SiGe Layers with High Ge Content by Compliant Substrates H. Yin1 , R.L. Peterson1 , K, high Ge content SiGe layers have been realized using stress balance on a compliant under compression. Upon equilibrium after an annealing, stress balance was formed between the SiGe films

  5. Investigations of the R5(SixGe1-x)4 Intermetallic Compounds by X-Ray Resonant Magnetic Scattering

    SciTech Connect (OSTI)

    Lizhi Tan

    2008-08-18T23:59:59.000Z

    The XRMS experiment on the Gd{sub 5}Ge{sub 4} system has shown that, below the Neel temperature, T{sub N} = 127 K, the magnetic unit cells is the same as the chemical unit cell. From azimuth scans and the Q dependence of the magnetic scattering, all three Gd sites in the structure were determined to be in the same magnetic space group Pnma. The magnetic moments are aligned along the c-axis and the c-components of the magnetic moments at the three different sites are equal. The ferromagnetic slabs are stacked antiferromagnetically along the b-direction. They found an unusual order parameter curve in Gd{sub 5}Ge{sub 4}. A spin-reorientation transition is a possibility in Gd{sub 5}Ge{sub 4}, which is similar to the Tb{sub 5}Ge{sub 4} case. Tb{sub 5}Ge{sub 4} possesses the same Sm{sub 5}Ge{sub 4}-type crystallographic structure and the same magnetic space group as Gd{sub 5}Ge{sub 4} does. The difference in magnetic structure is that Tb{sub 5}Ge{sub 4} has a canted one but Gd{sub 5}Ge{sub 4} has nearly a collinear one in the low temperature antiferromagnetic phase. The competition between the magneto-crystalline anisotropy and the nearest-neighbor magnetic exchange interactions may allow a 3-dimensional canted antiferromagnetic structure in Tb{sub 5}Ge{sub 4}. The spin-reorientation transition in both Gd{sub 5}Ge{sub 4} and Tb{sub 5}Ge{sub 4} may arise from the competition between the magnetic anisotropy from the spin-orbit coupling of the conduction electrons and the dipolar interactions anisotropy.

  6. Monolithic Ge-on-Si lasers for integrated photonics

    E-Print Network [OSTI]

    Liu, Jifeng

    We report room temperature Ge-on-Si lasers with direct gap emission at 1590-1610 nm. Modeling of Ge/Si double heterojunction structures, which is supported by experimental results of Ge/Si LEDs, indicates the feasibility ...

  7. Ge-on-Si laser for silicon photonics

    E-Print Network [OSTI]

    Camacho-Aguilera, Rodolfo Ernesto

    2013-01-01T23:59:59.000Z

    Ge-on-Si devices are explored for photonic integration. Importance of Ge in photonics has grown and through techniques developed in our group we demonstrated low density of dislocations (Ge ...

  8. Is there a risk from not using GE animals?

    E-Print Network [OSTI]

    Murray, James D.; Maga, Elizabeth A.

    2010-01-01T23:59:59.000Z

    Is there a risk from not using GE animals? James D. Murray •rst genetically engi- neered (GE) plants and animals forthe debate often focuses on GE as a technique that is used

  9. Germanium: From Its Discovery to SiGe Devices

    E-Print Network [OSTI]

    Haller, E.E.

    2006-01-01T23:59:59.000Z

    From Its Discovery to SiGe Devices E.E. Haller Department ofrapidly rising interest in SiGe alloys, we are just startingstrained and unstrained SiGe multilayer structures [58]. 9.

  10. Scaling of SiGe Heterojunction Bipolar Transistors

    E-Print Network [OSTI]

    Rieh, Jae-Sung

    Scaling of SiGe Heterojunction Bipolar Transistors JAE-SUNG RIEH, SENIOR MEMBER, IEEE, DAVID-century. This paper inves- tigates the impacts of scaling on SiGe heterojunction bipolar tran- sistors (HBTs), which), epitaxial-base Si BJTs (Epi Si BJT), SiGe HBTs (SiGe HBT), and SiGe HBTs with carbon-doped base (SiGeC HBT

  11. Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

    SciTech Connect (OSTI)

    Shibayama, Shigehisa [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan) [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083 (Japan); Kato, Kimihiko; Sakashita, Mitsuo; Takeuchi, Wakana; Taoka, Noriyuki; Nakatsuka, Osamu; Zaima, Shigeaki [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)] [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

    2013-08-19T23:59:59.000Z

    The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to the AlGeO formation could lead appropriate interface structures with high interface qualities.

  12. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03T23:59:59.000Z

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  13. Engineer Receives UMass "Salute To Service" Award | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    November 22, 2013 - GE Global Research, the technology development arm of the General Electric Company (NYSE: GE), is proud to announce that Dr. Marshall Jones, a world renowned...

  14. Crowdsourcing Wins Manufacturing Leadership 100 | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    NY, May 22, 2013 - GE Global Research, the technology development arm of the General Electric Co. (NYSE: GE) today announced that it has won a prestigious Manufacturing Leadership...

  15. Testimonials - Partnerships in Fuel Cells - GE Global Research...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Fuel Cells - GE Global Research Testimonials - Partnerships in Fuel Cells - GE Global Research Addthis An error occurred. Unable to execute Javascript. Text Version The words...

  16. Butterfly-Inspired Thermal Imaging | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    primusenginefeaturedimage3 GE Innovation and Manufacturing in Europe 2-4-13-v-3d-printing-medical-devices Additive Manufacturing Demonstration at GE Global Research ...

  17. ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224

    E-Print Network [OSTI]

    Saskatchewan, University of

    GE 120 ME 227 CE 212 MATH 223 GE 210 CMPT 116 ABE 211CHE 210 GE 213# MATH 224 ABE 295 ABE 212Elective* Elective* AB E 311 ABE 313 ABE 312 GE 348#ABE 323 co-requisite ABE 327 HSS#@ HSS#@ ABE 324 GE 300# ABE 395 4TH YEAR ABE Elec* ABE Elec* ABE Elec*ABE 422 GE 449# Ag Elec* T.E.* T.E.* ABE Elec* Ag Elec

  18. Impact ionization of excitons in Ge/Si structures with Ge quantum dots grown on the oxidized Si(100) surfaces

    SciTech Connect (OSTI)

    Shklyaev, A. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Shegai, O. A. [A. V. Rzhanov Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090 (Russian Federation); Nakamura, Y. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531 (Japan); Ichikawa, M. [Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-05-28T23:59:59.000Z

    Photoconductivity (PC) of Si/Ge structures with Ge quantum dots (QDs) grown on the Si(100) surfaces covered with the ultrathin, about 0.3–0.5?nm thick, SiO{sub 2} films is studied as a function of the interband light intensity under various lateral voltages. The structures exhibit PC with steps and a step with a peak at the step edge for low- and high-temperature grown structures, respectively. These PC features are associated with the impact ionization of QD-related excitons. The PC at step edges increases by several orders of magnitude for a certain value which is governed by the balance between rates of photo-generation, recombination, and impact ionization of excitons. The electron localization deeper in Si from the Ge QD layer in conjunction with a narrow binding-energy distribution of excitons is suggested to be the main reason that provides the sharpness of PC steps. The PC appears to be very sensitive to the impact ionization and QD preparation conditions. This allows revealing the specific characteristics of QD structures, related to their electronic and structural properties.

  19. Energy band alignment of atomic layer deposited HfO{sub 2} oxide film on epitaxial (100)Ge, (110)Ge, and (111)Ge layers

    SciTech Connect (OSTI)

    Hudait, Mantu K.; Zhu Yan [Advanced Devices and Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061 (United States)

    2013-03-21T23:59:59.000Z

    Crystallographically oriented epitaxial Ge layers were grown on (100), (110), and (111)A GaAs substrates by in situ growth process using two separate molecular beam epitaxy chambers. The band alignment properties of atomic layer hafnium oxide (HfO{sub 2}) film deposited on crystallographically oriented epitaxial Ge were investigated using x-ray photoelectron spectroscopy (XPS). Valence band offset, {Delta}E{sub v} values of HfO{sub 2} relative to (100)Ge, (110)Ge, and (111)Ge orientations were 2.8 eV, 2.28 eV, and 2.5 eV, respectively. Using XPS data, variation in valence band offset, {Delta}E{sub V}(100)Ge>{Delta}E{sub V}(111)Ge>{Delta}E{sub V}(110)Ge, was obtained related to Ge orientation. Also, the conduction band offset, {Delta}E{sub c} relation, {Delta}E{sub c}(110)Ge>{Delta}E{sub c}(111)Ge>{Delta}E{sub c}(100)Ge related to Ge orientations was obtained using the measured bandgap of HfO{sub 2} on each orientation and with the Ge bandgap of 0.67 eV. These band offset parameters for carrier confinement would offer an important guidance to design Ge-based p- and n-channel metal-oxide field-effect transistor for low-power application.

  20. Mid-Infrared Plasmonic Platform based on Heavily Doped Epitaxial Ge-on-Si: Retrieving the Optical Constants of Thin Ge Epilayers

    E-Print Network [OSTI]

    Baldassarre, Leonetta; Samarelli, Antonio; Gallacher, Kevin; Paul, Douglas J; Frigerio, Jacopo; Isella, Giovanni; Sakat, Emilie; Finazzi, Marco; Biagioni, Paolo; Ortolani, Michele

    2015-01-01T23:59:59.000Z

    The n-type Ge-on-Si epitaxial material platform enables a novel paradigm for plasmonics in the mid-infrared, prompting the future development of lab-on-a-chip and subwavelength vibrational spectroscopic sensors. In order to exploit this material, through proper electrodynamic design, it is mandatory to retrieve the dielectric constants of the thin Ge epilayers with high precision due to the difference from bulk Ge crystals. Here we discuss the procedure we have employed to extract the real and imaginary part of the dielectric constants from normal incidence reflectance measurements, by combining the standard multilayer fitting procedure based on the Drude model with Kramers-Kronig transformations of absolute reflectance data in the zero-transmission range of the thin film.

  1. Chemical bonding in EuTGe (T=Ni, Pd, Pt) and physical properties of EuPdGe

    SciTech Connect (OSTI)

    Rocquefelte, Xavier [UMR 6226 Sciences Chimiques de Rennes, Universite de Rennes 1-ENSC Rennes-CNRS, Avenue du General Leclerc, F-35042 Rennes Cedex (France); Gautier, Regis [UMR 6226 Sciences Chimiques de Rennes, Universite de Rennes 1-ENSC Rennes-CNRS, Avenue du General Leclerc, F-35042 Rennes Cedex (France); Halet, Jean-Francois [UMR 6226 Sciences Chimiques de Rennes, Universite de Rennes 1-ENSC Rennes-CNRS, Avenue du General Leclerc, F-35042 Rennes Cedex (France)], E-mail: halet@univ-rennes1.fr; Muellmann, Ralf [Institut fuer Physikalische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Rosenhahn, Carsten [Institut fuer Physikalische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Mosel, Bernd D. [Institut fuer Physikalische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Kotzyba, Gunter [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany); Poettgen, Rainer [Institut fuer Anorganische und Analytische Chemie, Universitaet Muenster, Corrensstrasse 30, D-48149 Muenster (Germany)], E-mail: pottgen@uni-muenster.de

    2007-02-15T23:59:59.000Z

    EuPdGe was prepared from the elements by reaction in a sealed tantalum tube in a high-frequency furnace. Magnetic susceptibility measurements show Curie-Weiss behavior above 60 K with an experimental magnetic moment of 8.0(1){mu} {sub B}/Eu indicating divalent europium. At low external fields antiferromagnetic ordering is observed at T {sub N}=8.5(5) K. Magnetization measurements indicate a metamagnetic transition at a critical field of 1.5(2) T and a saturation magnetization of 6.4(1){mu} {sub B}/Eu at 5 K and 5.5 T. EuPdGe is a metallic conductor with a room-temperature value of 5000{+-}500 {mu}{omega} cm for the specific resistivity. {sup 151}Eu Moessbauer spectroscopic experiments show a single europium site with an isomer shift of {delta}=-9.7(1) mm/s at 78 K. At 4.2 K full magnetic hyperfine field splitting with a hyperfine field of B=20.7(5) T is observed. Density functional calculations show the similarity of the electronic structures of EuPdGe and EuPtGe. T-Ge interactions (T=Pd, Pt) exist in both compounds. An ionic formula splitting Eu{sup 2+} T {sup 0}Ge{sup 2-} seems more appropriate than Eu{sup 2+} T {sup 2+}Ge{sup 4-} accounting for the bonding in both compounds. Geometry optimizations of EuTGe (T=Ni, Pt, Pd) show weak energy differences between the two structural types. - Graphical abstract: Cutouts of the [PdGe] and [PtGe] polyanions in the structures of EuPdGe and EuPtGe. Atom designations and some relevant interatomic distances are given.

  2. GE's Christine Furstoss Named to NACIE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    companies like GE will need workers with new and advanced skills in areas like 3D printing and virtual design. It's all about growing a new generation of workforce skills,...

  3. GE Unveils High-Tech Superhero GENIUS MAN | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    education Committed to inspiring the next generation of scientists and engineers Infused with an array of superpowers inspired by GE technologies Super Vision, ability to...

  4. Axial Ge/Si nanowire heterostructure tunnel FETs.

    SciTech Connect (OSTI)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01T23:59:59.000Z

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx}20{sup o} off the <111> axis at about 300 nm away from the Ge/Si interface. This provides a natural marker for placing the gate contact electrodes and gate metal at appropriate location for desired high-on current and reduced ambipolarity as shown in Fig. 2. The 1D heterostructures allow band-edge engineering in the transport direction, not easily accessible in planar devices, providing an additional degree of freedom for designing tunnel FETs (TFETs). For instance, a Ge tunnel source can be used for efficient electron/hole tunneling and a Si drain can be used for reduced back-tunneling and ambipolar behavior. Interface abruptness on the other hand (particularly for doping) imposes challenges in these structures and others for realizing high performance TFETs in p-i-n junctions. Since the metal-semiconductor contacts provide a sharp interface with band-edge control, we use properly designed Schottky contacts (aided by 3D Silvaco simulations) as the tunnel barriers both at the source and drain and utilize the asymmetry in the Ge/Si channel bandgap to reduce ambipolar transport behavior generally observed in TFETs. Fig. 3 shows the room-temperature transfer curves of a Ge/Si heterostructure TFET (H-TFET) for different V{sub DS} values showing a maximum on-current of {approx}7 {micro}A, {approx}170 mV/decade inverse subthreshold slope and 5 orders of magnitude I{sub on}/I{sub off} ratios for all V{sub DS} biases considered here. This high on-current value is {approx}1750 X higher than that obtained with Si p-i-n{sup +} NW TFETs and {approx}35 X higher than that obtained with CNT TFET. The I{sub on}/I{sub off} ratio and inverse subthreshold slope compare favorably to that of Si {approx} 10{sup 3} I{sub on}/I{sub off} and {approx} 800 mV/decade SS{sup -1} but lags behind those of CNT TFET due to poor PECVD nitride gate oxide quality ({var_epsilon}{sub r} {approx} 3-4). The asymmetry in the Schottky barrier heights used here eliminates the stringent requirements of abrupt doped interfaces used in p-i-n based TFETs, which is hard to achieve both in thin-film and

  5. April 30 Public Meeting: Physical Characterization of Smart and Grid-Connected Commercial and Residential Building End-Use Equipment and Appliances

    Broader source: Energy.gov [DOE]

    These documents contain slide decks presented at the Physical Characterization of Smart and Grid-Connected Commercial and Residential Buildings End-Use Equipment and Appliances public meeting held on April 30, 2014. The first document includes the first presentation from the meeting: DOE Vision and Objectives. The second document includes all other presentations from the meeting: Terminology and Definitions; End-User and Grid Services; Physical Characterization Framework; Value, Benefits & Metrics.

  6. Determination of the b-quark production cross section in p{anti p} collisions at 630 GeV

    SciTech Connect (OSTI)

    Abbott, B.

    1997-10-01T23:59:59.000Z

    We present a preliminary measurement of the b-quark production cross section in p{anti p} collisions at {radical}s = 630 GeV. The analysis is based on 340 nb{sup -1} of data collected with the D0 detector at the Fermilab Tevatron Collider. We determine the ratio of the b-quark production cross sections at 630 GeV to 1800 GeV and compare our results with the CDF and UA1 measurements, and with the next-to- leading order QCD predictions.

  7. Electronic and optical properties of the cubic spinel phase of c-Si{sub 3}N{sub 4}, c-Ge{sub 3}N{sub 4}, c-SiGe{sub 2}N{sub 4}, and c-GeSi{sub 2}N{sub 4}

    SciTech Connect (OSTI)

    Ching, W. Y.; Mo, Shang-Di; Ouyang, Lizhi

    2001-06-15T23:59:59.000Z

    The electronic and optical properties of the new cubic spinel nitrides c-Si{sub 3}N{sub 4}, c-Ge{sub 3}N{sub 4}, and that of the predicted double nitrides c-SiGe{sub 2}N{sub 4} and c-GeSi{sub 2}N{sub 4} are studied by a first-principles method. They are all semiconductors with band gaps between 1.85 and 3.45 eV and a bulk modulus between 258 and 280 GPa. From the total-energy calculations, it is shown that c-SiGe{sub 2}N{sub 4} should be a stable compound while c-GeSi{sub 2}N{sub 4} could be metastable. The compound c-SiGe{sub 2}N{sub 4} is of particular interest because of a favorable direct band gap of 1.85 eV and a conduction-band effective mass of 0.49. The crystal has a very strong covalent bonding character as revealed by the calculated Mulliken effective charge and bond order. The strong covalent bonding in c-SiGe{sub 2}N{sub 4} is attributed to the optimal arrangement of the cations. The smaller Si ion occupies the tetrahedrally coordinated (8a) site and the larger Ge ion occupies the octahedrally coordinated (16d) site.

  8. Solving the viscous hydrodynamics order by order

    E-Print Network [OSTI]

    Jian-Hua Gao; Shi Pu

    2014-09-02T23:59:59.000Z

    In this paper, we propose a method of solving the viscous hydrodynamics order by order in a derivative expansion. In such method, the zero order solution is just the one of the ideal hydrodynamics. All the other higher order corrections satisfy the same first-order partial differential equations but with different inhomogeneous terms. We therefore argue that our method could be easily extended to any orders. The problem of causality and stability will be released if the gradient expansion is guaranteed. This method might be of great help to both theoretical and numerical calculations of relativistic hydrodynamics.

  9. Be a part of something bigger than yourself GE Healthcare

    E-Print Network [OSTI]

    Rimon, Elon

    Be a part of something bigger than yourself GE Healthcare Position: Mechanical Engineer as a contractor · Working at GE site at Tirat-Carmel. · Start: immediately · Duration 6-10 months, with optional elongation. ElgemsMoked@ge.com-CV www.gehealthcare.com We are GE Healthcare, a $17 billion division

  10. UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 201213 Includes course titles and Schedule of Classes designations

    E-Print Network [OSTI]

    Loudon, Catherine

    UC IRVINE GENERAL EDUCATION (GE) REQUIREMENT AND APPROVED GE COURSES, 2012­13 Includes course titles and Schedule of Classes designations GENERAL EDUCATION (GE) REQUIREMENT UCI is committed undergraduates complete a set of general education (GE) requirements. General education courses introduce

  11. 2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director of the National Institute for Advanced

    E-Print Network [OSTI]

    2009-10 Princeton Global Scholar Ge Zhaoguang. Professor Ge is the founding director, and emendation of all sorts of newly discovered texts (mostly found at archaeological sites). Professor Ge University, Professor Ge taught at Tsinghua University for a number of years. He is known for many important

  12. Measurement of the direct energy gap of coherently strained SnxGe1x Ge,,001... heterostructures

    E-Print Network [OSTI]

    Atwater, Harry

    Measurement of the direct energy gap of coherently strained SnxGe1Àx ÕGe,,001... heterostructures The direct energy gap has been measured for coherently strained SnxGe1 x alloys on Ge 001 substrates with 0 for coherently strained SnxGe1 x alloys indicates a large alloy contribution and a small strain contribution

  13. GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising

    E-Print Network [OSTI]

    de Lijser, Peter

    GE Advising & Registration Students FT Faculty PT Faculty Admin Unit 4 Other Staff Students have access to quality GE advising 9% 13% 11% 13% 10% 8% Faculty can easily advise students on GE requirements 10% 18% 9% 24% 33% 11% Staff academic advisors can easily advise students on GE requirements 8% 11

  14. High-germanium-content SiGe islands formed on compliant oxide by SiGe Haizhou Yina)

    E-Print Network [OSTI]

    High-germanium-content SiGe islands formed on compliant oxide by SiGe oxidation Haizhou Yina and the nonuniformity of the enhanced germanium content during the SiGe oxidation were improved by depositing a silicon was relaxed by lateral expansion of the SiGe islands, showing that dislocations were not required

  15. Relaxation and recombination processes in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Gatti, E., E-mail: gatti@mater.unimib.it; Giorgioni, A., E-mail: gatti@mater.unimib.it; Grilli, E., E-mail: gatti@mater.unimib.it; Guzzi, M., E-mail: gatti@mater.unimib.it [L-NESS and Università di Milano-Bicocca, Dip. di Scienza dei Materiali, via Cozzi 53, 20125 Milano (Italy); Chrastina, D.; Isella, G. [L-NESS and Politecnico di Milano, Dip. di Fisica, via Anzani 42, 22100 Como (Italy); Chernikov, A.; Kolata, K.; Bornwasser, V.; Köster, N. S.; Woscholski, R.; Chatterjee, S. [Faculty of Physics and Materials Sciences Center, Philipps-Universität, Renthof 5, 35032 Marburg (Germany)

    2013-12-04T23:59:59.000Z

    The carrier dynamics that occurs in Ge/SiGe QWs when electrons are excited to confined states at ? is studied by means of optical spectroscopy at different lattice temperatures. The typical times for the different relaxation and recombination processes are given and discussed.

  16. Search for neutrinoless double-beta decay of Ge-76 with GERDA

    E-Print Network [OSTI]

    Karl-Tasso Knoepfle

    2008-10-17T23:59:59.000Z

    GERDA, the GERmanium Detector Array experiment, is a new double beta-decay experiment which is currently under construction in the INFN National Gran Sasso Laboratory (LNGS), Italy. It is implementing a new shielding concept by operating bare Ge diodes - enriched in Ge-76 - in high purity liquid argon supplemented by a water shield. The aim of GERDA is to verify or refute the recent claim of discovery, and, in a second phase, to achieve a two orders of magnitude lower background index than recent experiments. The paper discusses motivation, physics reach, design and status of construction of GERDA, and presents some R&D results.

  17. Synthesis, structural characterization and magnetic properties of RE{sub 2}MgGe{sub 2} (RE=rare-earth metal)

    SciTech Connect (OSTI)

    Suen, Nian-Tzu; Tobash, Paul H. [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States)

    2011-11-15T23:59:59.000Z

    A series of rare-earth metal-magnesium-germanides RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) has been synthesized by reactions of the corresponding elements at high temperature. Their structures have been established by single-crystal and powder X-ray diffraction and belong to the Mo{sub 2}FeB{sub 2} structure type (space group P4/mbm (No. 127), Z=2; Pearson symbol tP10). Temperature dependent DC magnetization measurements indicate Curie-Weiss paramagnetism in the high-temperature regime for all members of the family, excluding Y{sub 2}MgGe{sub 2}, Sm{sub 2}MgGe{sub 2}, and Lu{sub 2}MgGe{sub 2}. At cryogenic temperatures (ca. 60 K and below), most RE{sub 2}MgGe{sub 2} phases enter into an antiferromagnetic ground-state, except for Er{sub 2}MgGe{sub 2} and Tm{sub 2}MgGe{sub 2}, which do not undergo magnetic ordering down to 5 K. The structural variations as a function of the decreasing size of the rare-earth metals, following the lanthanide contraction, and the changes in the magnetic properties across the series are discussed as well. - Graphical Abstract: The structure of RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) can be best viewed as 2-dimensional slabs of Mg and Ge atoms (anionic sub-lattice), and layers of rare-earth metal atoms (cationic sub-lattice) between them. Within this description, one should consider the Ge-Ge dumbbells (formally Ge{sup 6-}{sub 2}), interconnected with square-planar Mg atom as forming flat [MgGe{sub 2}] layers (z=0), stacked along the c-axis with the layers at z=1/2, made of rare-earth metal cations (formally RE{sup 3+}). Highlights: > RE{sub 2}MgGe{sub 2} (RE=Y, Nd, Sm, Gd-Tm, Lu) are new ternary germanides. > Their structures can be recognized as a 1:1 intergrowth of CsCl- and AlB{sub 2}-like slabs. > Ge atoms are covalently bound into Ge{sub 2} dumbbells. > Most RE{sub 2}MgGe{sub 2} phases are antiferromagnetically ordered at cryogenic temperatures.

  18. Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe/Si*

    E-Print Network [OSTI]

    Deviations from ideal nucleation-limited relaxation in high-Ge content compositionally graded SiGe the sudden rise in threading dislocation density in Ge-rich relaxed graded SiGe layers grown at higher growth systems, including relaxed graded SiGe on Si substrates i.e., x Si1-xGex /Si ,1,2 InGaP on GaP substrates

  19. Hydrogen interaction kinetics of Ge dangling bonds at the Si{sub 0.25}Ge{sub 0.75}/SiO{sub 2} interface

    SciTech Connect (OSTI)

    Stesmans, A., E-mail: andre.stesmans@fys.kuleuven.be; Nguyen Hoang, T.; Afanas'ev, V. V. [Semiconductor Physics Laboratory, Department of Physics and Astronomy, University of Leuven, 3001 Leuven (Belgium)

    2014-07-28T23:59:59.000Z

    The hydrogen interaction kinetics of the GeP{sub b1} defect, previously identified by electron spin resonance (ESR) as an interfacial Ge dangling bond (DB) defect occurring in densities ?7?×?10{sup 12}?cm{sup ?2} at the SiGe/SiO{sub 2} interfaces of condensation grown (100)Si/a-SiO{sub 2}/Ge{sub 0.75}Si{sub 0.25}/a-SiO{sub 2} structures, has been studied as function of temperature. This has been carried out, both in the isothermal and isochronal mode, through defect monitoring by capacitance-voltage measurements in conjunction with ESR probing, where it has previously been demonstrated the defects to operate as negative charge traps. The work entails a full interaction cycle study, comprised of analysis of both defect passivation (pictured as GeP{sub b1}-H formation) in molecular hydrogen (?1?atm) and reactivation (GeP{sub b1}-H dissociation) in vacuum. It is found that both processes can be suitably described separately by the generalized simple thermal (GST) model, embodying a first order interaction kinetics description based on the basic chemical reactions GeP{sub b1}?+?H{sub 2}???GeP{sub b1}H?+?H and GeP{sub b1}H???GeP{sub b1}?+?H, which are found to be characterized by the average activation energies E{sub f}?=?1.44?±?0.04?eV and E{sub d}?=?2.23?±?0.04?eV, and attendant, assumedly Gaussian, spreads ?E{sub f}?=?0.20?±?0.02?eV and ?E{sub d}?=?0.15?±?0.02?eV, respectively. The substantial spreads refer to enhanced interfacial disorder. Combination of the separately inferred kinetic parameters for passivation and dissociation results in the unified realistic GST description that incorporates the simultaneous competing action of passivation and dissociation, and which is found to excellently account for the full cycle data. For process times t{sub a}???35?min, it is found that even for the optimum treatment temperature ?380?°C, only ?60% of the GeP{sub b1} system can be electrically silenced, still far remote from device grade level. This ineffectiveness is concluded, for the major part, to be a direct consequence of the excessive spreads in the activation energies, ?2–3 times larger than for the Si DB P{sub b} defects at the standard thermal (111)Si/SiO{sub 2} interface which may be easily passivated to device grade levels, strengthened by the reduced difference between the average E{sub f} and E{sub d} values. Exploring the guidelines of the GST model indicates that passivation can be improved by decreasing T{sub an} and attendant enlarging of t{sub a}, however, at best still leaving ?2% defects unpassivated even for unrealistically extended anneal times. The average dissociation energy E{sub d}???2.23?eV, concluded as representing the GeP{sub b1}-H bond strength, is found to be smaller than the SiP{sub b}-H one, characterized by E{sub d}???2.83?eV. An energy deficiency is encountered regarding the energy sum rule inherent to the GST-model, the origin of which is substantiated to lie with a more complex nature of the forward passivation process than basically depicted in the GST model. The results are discussed within the context of theoretical considerations on the passivation of interfacial Ge DBs by hydrogen.

  20. Highly bent (110) Ge crystals for efficient steering of ultrarelativistic beams

    SciTech Connect (OSTI)

    De Salvador, D.; Maggioni, G.; Carturan, S.; Bazzan, M.; Argiolas, N.; Carnera, A. [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro (PD) and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy)] [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro (PD) and Dipartimento di Fisica e Astronomia, Università di Padova, Via Marzolo 8, 35131 Padova (Italy); Dalla Palma, M.; Della Mea, G. [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro (PD) and Dipartimento di Ingegneria Industriale, Università di Trento, Via Mesiano 77, 38050 Trento (Italy)] [INFN Laboratori Nazionali di Legnaro, Viale Università 2, 35020 Legnaro (PD) and Dipartimento di Ingegneria Industriale, Università di Trento, Via Mesiano 77, 38050 Trento (Italy); Bagli, E.; Mazzolari, A.; Bandiera, L.; Guidi, V. [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara Via Saragat 1, 44100 Ferrara (Italy)] [INFN Sezione di Ferrara, Dipartimento di Fisica, Università di Ferrara Via Saragat 1, 44100 Ferrara (Italy); Lietti, D.; Berra, A.; Guffanti, G.; Prest, M. [Dipartimento di Scienza e Alta Tecnologia, Università dell'Insubria, Via Valleggio 11, 22100 Como and INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan (Italy)] [Dipartimento di Scienza e Alta Tecnologia, Università dell'Insubria, Via Valleggio 11, 22100 Como and INFN Sezione di Milano Bicocca, Piazza della Scienza 3, 20126 Milan (Italy); Vallazza, E. [INFN Sezione di Trieste, Via Valerio 2, 34127 Trieste (Italy)] [INFN Sezione di Trieste, Via Valerio 2, 34127 Trieste (Italy)

    2013-10-21T23:59:59.000Z

    Thanks to the effective electrostatic potential generated by the ordered atomic structure, bent crystals can efficiently deflect ultra relativistic charged beams by means of planar and axial channeling phenomena as well as of the recently discovered volume reflection effect. Most of the experimental knowledge about these phenomena has been gathered with Si crystals, but it has been recently demonstrated that the steering performance can be improved by using high quality Ge materials which have a larger atomic number. In this paper, we investigate channeling and volume reflection of 400 GeV protons from (110) lattice planes in highly bent Ge strips crystals. Both production and characterization of the strips are presented. Herein, the experimental results on deflection are compared with theoretical predictions, with previous published data and with the expected performances of Si crystals in similar experimental conditions.

  1. Quantum dot Ge/TiO{sub 2} heterojunction photoconductor fabrication and performance

    SciTech Connect (OSTI)

    Church, Carena P.; Carter, Sue A., E-mail: sacarter@ucsc.edu [Department of Physics, University of California Santa Cruz, Santa Cruz, California 95064 (United States); Muthuswamy, Elayaraja; Kauzlarich, Susan M. [Department of Chemistry, University of California Davis, Davis, California 95616 (United States)] [Department of Chemistry, University of California Davis, Davis, California 95616 (United States); Zhai, Guangmei [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)] [Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Taiyuan University of Science and Technology, Taiyuan, Shanxi 030024 (China)

    2013-11-25T23:59:59.000Z

    Spun cast TiO{sub 2}-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (?200?nm) devices with photocurrents at 0.5?V of 10{sup ?4} A cm{sup ?2} while the thickest devices have photocurrents at 0.5?V of 10{sup ?2} A cm{sup ?2} with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5?V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

  2. Transition threshold in Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses

    SciTech Connect (OSTI)

    Wei, Wen-Hou [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia); Fang, Liang, E-mail: lfang@cqu.edu.cn [Department of Applied Physics, Chongqing University, Chongqing 401331 (China); Shen, Xiang [Laboratory of Infrared Material and Devices, Advanced Technology Research Institute, Ningbo University, Ningbo 315211 (China); Wang, Rong-Ping [Centre for Ultrahigh Bandwidth Devices for Optical Systems (CUDOS), Laser Physics Centre, Research School of Physics and Engineering, Australian National University, Canberra ACT 0200 (Australia)

    2014-03-21T23:59:59.000Z

    Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses with Ge content from 7.5 to 32.5?at.?% have been prepared by melt-quench technique, and the physical parameters including glass transition temperature (T{sub g}), density (?), compactness (C), shear elastic moduli (C{sub s}), compression elastic moduli (C{sub c}), refractive index (n), and optical bandgap (E{sub g}) have been investigated. While all these physical parameters show threshold behavior in the glass with a chemically stoichiometric composition. Raman spectra analysis also indicates that, with increasing Ge content, Se-chains or rings gradually disappear until all Se-atoms are consumed in the glass with a chemically stoichiometric composition. With further increasing Ge content, homopolar Ge-Ge and Sb-Sb bonds are formed and the chemical order in the glasses is violated. The threshold behavior of the physical properties in the Ge{sub x}Sb{sub 10}Se{sub 90?x} glasses can be traced to demixing of networks above the chemically stoichiometric composition.

  3. Ge/SiGe quantum wells on Si(111): Growth, structural, and optical properties

    SciTech Connect (OSTI)

    Gatti, E., E-mail: eleonora.gatti@mater.unimib.it; Pezzoli, F.; Grilli, E. [L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 55, I-20125 Milano (Italy); Isa, F.; Chrastina, D.; Isella, G. [L-NESS and Dipartimento di Fisica, Politecnico di Milano, Polo di Como, via Anzani 42, I - 22100 Como (Italy); Müller Gubler, E. [Electron Microscopy Center of ETH Zürich (EMEZ), August-Piccard-Hof 1, CH-8093 Zürich (Switzerland)

    2014-07-28T23:59:59.000Z

    The epitaxial growth of Ge/Si{sub 0.15}Ge{sub 0.85} multiple quantum wells (MQWs) on Si(111) substrates is demonstrated. A 3??m thick reverse, double-step virtual substrate with a final composition of Si{sub 0.10}Ge{sub 0.90} has been employed. High resolution XRD, TEM, AFM and defect etching analysis has been used for the study of the structural properties of the buffer and of the QWs. The QW stack is characterized by a threading dislocation density of about 3?×?10{sup 7?}cm{sup ?2} and an interdiffusion layer at the well/barrier interface of 2.1?nm. The quantum confined energy levels of this system have been calculated using the k·p and effective mass approximation methods. The Ge/Si{sub 0.15}Ge{sub 0.85} MQWs have been characterized through absorption and photoluminescence measurements. The optical spectra have been compared with those of Ge/Si{sub 0.15}Ge{sub 0.85} QWs grown on Si(001) through a thick graded virtual substrate.

  4. Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay, Jonathan E. Roth, Rebecca K. Scheavitz, Yu-Hsuan Kuo*

    E-Print Network [OSTI]

    Miller, David A. B.

    Optical Link on Silicon Employing Ge/SiGe Quantum Well Structures Onur Fidaner, Ali K. Okyay University, Taipei, Taiwan Abstract: We demonstrate an optical link on silicon employing Ge/SiGe quantum well of the quantum-confined Stark effect (QCSE) on silicon using Ge/SiGe quantum wells opened up the possibility

  5. The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin, S. Cecchi, J. Frigerio, T. Etzelstorfer et al.

    E-Print Network [OSTI]

    Hague, Jim

    The thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli, L. Ferre Llin thermoelectric properties of Ge/SiGe modulation doped superlattices A. Samarelli,1 L. Ferre Llin,1 S. Cecchi,2 J in the thermoelectric figure of merit, ZT, and power factor at room temperature over bulk Ge, Si1ÀyGey, and Si/Ge

  6. 23 6 12 8:00 III-V/Ge CMOS

    E-Print Network [OSTI]

    Katsumoto, Shingo

    23 6 12 8:00 - 1 - 1. : III-V/Ge CMOS ~ 200%~ 2. : III-V (Ge) III-V/Ge CMOS (Si) 200% III-V/Ge CMOS 200% III-V/Ge CMOS () () () () III-V III-V/Ge CMOS (1) III-V Ge III-V/Ge CMOS (2) III-V-OI MOSFET (3) III-V/Ge CMOS "2011 Symposia on VLSI

  7. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi [JLAB] (ORCID:0000000170267841)

    2015-05-01T23:59:59.000Z

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers, the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.

  8. Detector development for Jefferson Lab's 12GeV Upgrade

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Qiang, Yi

    2015-05-01T23:59:59.000Z

    Jefferson Lab will soon finish its highly anticipated 12 GeV Upgrade. With doubled maximum energy, Jefferson Lab’s Continuous Electron Beam Accelerator Facility (CEBAF) will enable a new experimental program with substantial discovery potential, addressing important topics in nuclear, hadronic and electroweak physics. In order to take full advantage of the high energy, high luminosity beam, new detectors are being developed, designed and constructed to fit the needs of different physics topics. The paper will give an overview of various new detector technologies to be used for 12 GeV experiments. It will then focus on the development of two solenoid-based spectrometers,more »the GlueX and SoLID spectrometers. The GlueX experiment in Hall D will study the complex properties of gluons through exotic hybrid meson spectroscopy. The GlueX spectrometer, a hermetic detector package designed for spectroscopy and the associated partial wave analysis, is currently in the final stage of construction. Hall A, on the other hand, is developing the SoLID spectrometer to capture the 3D image of the nucleon from semi-inclusive processes and to study the intrinsic properties of quarks through mirror symmetry breaking. Such a spectrometer will have the capability to handle very high event rates while still maintaining a large acceptance in the forward region.« less

  9. Pressure-induced transformations in amorphous Si-Ge alloy

    SciTech Connect (OSTI)

    Coppari, F.; Polian, A.; Menguy, N.; Trapananti, A.; Congeduti, A.; Newville, M.; Prakapenka, V.B.; Choi, Y.; Principi, E.; Di Cicco, A. (CNRS-UMR); (UC); (Camerino)

    2012-03-14T23:59:59.000Z

    The pressure behavior of an amorphous Si-rich SiGe alloy ({alpha}-Si{sub x}Ge{sub 1-x}, x = 0.75) has been investigated up to about 30 GPa, by a combination of Raman spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction measurements. The trends of microscopic structural properties and of the Raman-active phonon modes are presented in the whole pressure range. Nucleation of nanocrystalline alloy particles and metallization have been observed above 12 GPa, with a range of about 2 GPa of coexistence of amorphous and crystalline phases. Transformations from the amorphous tetrahedral, to the crystalline tetragonal ({beta}-Sn) and to the simple hexagonal structures have been observed around 13.8 and 21.8 GPa. The recovered sample upon depressurization, below about 4 GPa, shows a local structure similar to the as-deposited one. Inhomogeneities of the amorphous texture at the nanometric scale, probed by high-resolution transmission electron microscopy, indicate that the recovered amorphous sample has a different ordering at this scale, and therefore the transformations can not be considered fully reversible. The role of disordered grain boundaries at high pressure and the possible presence of a high-density amorphous phase are discussed.

  10. Realized and prospective impacts of U.S. energy efficiency standards for residential appliances: 2004 update

    SciTech Connect (OSTI)

    Meyers, Stephen; McMahon, James; McNeil, Michael

    2005-06-24T23:59:59.000Z

    This study estimated energy, environmental and consumer economic impacts of U.S. federal residential energy efficiency standards that became effective in the 1988-2001 period or will take effect by the end of 2007. These standards have been the subject of in-depth analyses conducted as part of DOE's standards rulemaking process. This study drew on those analyses, but updated certain data and developed a common framework and assumptions for all of the products in order to estimate realized impacts and to update projected impacts. We estimate that the considered standards will reduce residential primary energy consumption and CO{sub 2} emissions in 2020 by 8% compared to the levels expected without any standards. They will save a cumulative total of 34 quads by 2020, and 54 quads by 2030. The estimated cumulative net present value of consumer benefit amounts to $93 billion by 2020, and grows to $125 billion by 2030. The overall benefit/cost ratio of cumulative consumer impacts is 2.45 to 1. While the results of this study are subject to a fair degree of uncertainty, we believe that the general conclusions--DOE's energy efficiency standards save significant quantities of energy (and associated carbon emissions) and reduce consumers' net costs--are robust.

  11. Measurement of the neutron-capture cross section of ??Ge and ??Ge below 15 MeV and its relevance to 0??? decay searches of ??Ge

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Bhike, Megha; Fallin, B.; Tornow, W.

    2015-02-01T23:59:59.000Z

    The neutron radiative-capture cross section of ??Ge was measured between 0.4 and 14.8 MeV using the activation technique. Germanium samples with the isotopic abundance of ~86% ??Ge and ~14% ??Ge used in the 0??? searches by the GERDA and Majorana Collaborations were irradiated with monoenergetic neutrons produced at eleven energies via the ³H(p,n)³He, ²H(d,n)³He and ³H(d,n)?He reactions. Previously, data existed only at thermal energies and at 14 MeV. As a by-product, capture cross-section data were also obtained for ??Ge at neutron energies below 8 MeV. Indium and gold foils were irradiated simultaneously for neutron fluence determination. High-resolution ?-ray spectroscopy wasmore »used to determine the ?-ray activity of the daughter nuclei of interest. For the ??Ge total capture cross section the present data are in good agreement with the TENDL-2013 model calculations and the ENDF/B-VII.1 evaluations, while for the ??Ge(n,?)??Ge reaction, the present data are about a factor of two larger than predicted. It was found that the ??Ge(n,?)??Ge yield in the High-Purity Germanium (HPGe) detectors used by the GERDA and Majorana Collaborations is only about a factor of two smaller than the ??Ge(n,?)??Ge yield due to the larger cross section of the former reaction.« less

  12. Surface structure of the liquid Au[subscript 72]Ge[subscript 28] eutectic phase: X-ray reflectivity

    SciTech Connect (OSTI)

    Pershan, P.S.; Stoltz, S.E.; Mechler, S.; Shpyrko, O.G.; Grigoriev, A.Y.; Balagurusamy, V.S. K.; Lin, B.H.; Meron, M.; (Harvard); (Brown); (UCSD); (Tulsa); (UC)

    2009-12-01T23:59:59.000Z

    The surface structure of the liquid phase of the Au{sub 72}Ge{sub 28} eutectic alloy has been measured using resonant and nonresonant x-ray reflectivity and grazing incidence x-ray diffraction. In spite of the significant differences in the surface tension of liquid Ge and Au the Gibbs adsorption enhancement of Ge concentration at the surface is minimal. This is in striking contrast to all the other binary alloys with large differences in the respective surface tensions measured up to date. In addition there is no evidence of the anomalous strong surface layering or in-plane crystalline order that has been reported for the otherwise quite similar liquid Au{sub 82}Si{sub 18} eutectic. Instead, the surface of eutectic Au{sub 72}Ge{sub 28} is liquidlike and the layering can be explained by the distorted crystal model with only slight modifications to the first layer.

  13. Viscosity Measurement G.E. Leblanc

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    30 Viscosity Measurement G.E. Leblanc McMaster University R.A. Secco The University of Western Ontario 30.1 Shear Viscosity ............................................................. 30-l Newtonian and Non-Newtonian Fluids l Dimensions and Units of Viscosity l Viscometer Types l Capillary M. Kostic

  14. GE Teams with NY College to Pilot SOFC Technology |GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Hudson Valley Community College to Pilot GE Solid Oxide Fuel Cell Technology Click to email this to a friend (Opens in new window) Share on Facebook (Opens in new window) Click to...

  15. GE partners with 'Girls Who Code' for summer program | GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Partners with 'Girls Who Code' for Summer Immersion Program to Help Close the Gender Gap...

  16. GE, NASA Work to Relaunch Supersonic Air Travel | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    share on LinkedIn (Opens in new window) Click to share on Tumblr (Opens in new window) GE Supporting NASA's efforts to Relaunch Commercial Supersonic Air Travel Awarded 2- year...

  17. Polymers with increased order

    DOE Patents [OSTI]

    Sawan, Samuel P. (Tyngsborough, MA); Talhi, Abdelhafid (Rochester, MI); Taylor, Craig M. (Jemez Springs, NM)

    1998-08-25T23:59:59.000Z

    The invention features polymers with increased order, and methods of making them featuring a dense gas.

  18. The Majorana Ge-76 double-beta decay project

    SciTech Connect (OSTI)

    Avignone, Frank Titus [ORNL

    2010-01-01T23:59:59.000Z

    The MAJORANA Project is a research and development activity set up to establish the feasibility and cost of a doublebetadecay experiment comprising a one-ton array of Ge detectors fabricated from germanium enriched to about 86% in Ge-76.

  19. GE launches 'STEM empowers OK' initiative in Oklahoma City |...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ok GE Foundation donates 400,000 to enhance STEM education initiatives across Oklahoma STEM Empowers OK to sponsor week-long, GE Summer Science Academy at OSSM for Oklahoma...

  20. Passionate Technologists Wanted at ASME Turbo Expo|GE Global...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Meet & Greet GE Researchers at ASME Turbo 2014 Thomas Ripplinger 2014.06.10 Do you love gas turbine research as much as I do? Then I want to meet you next week Since joining GE...

  1. Driving Sensing Technology in Oil & Gas | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    a bit more about Bill's work. Bill joined GE Global Research in 2010. For the past four years his emphasis has been on developing advanced photonics technologies for multiple GE...

  2. Tailoring the spin polarization in Ge/SiGe multiple quantum wells

    SciTech Connect (OSTI)

    Giorgioni, Anna; Pezzoli, Fabio; Gatti, Eleonora; Grilli, Emanuele; Guzzi, Mario [LNESS-Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, I-20125 Milano (Italy); Bottegoni, Federico; Cecchi, Stefano; Ciccacci, Franco; Isella, Giovanni [LNESS-Dipartimento di Fisica, Politecnico di Milano, I-20133 Milano (Italy); Trivedi, Dhara; Song, Yang [Department of Physics and Astronomy, University of Rochester, Rochester (United States); Li, Pengki [Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States); Dery, Hanan [Department of Physics and Astronomy, University of Rochester, Rochester, NY 14627 and Department of Electrical and Computer Engineering, University of Rochester, Rochester (United States)

    2013-12-04T23:59:59.000Z

    We performed spin-resolved photoluminescence measurements on Ge/SiGe multiple quantum wells with different well thickness and using different exciting power densities. The polarization of the direct emission strongly depends on the relative weight of electrons photoexcited from the light and the heavy hole subbands. The study of the polarization as a function of the exciting power highlights the role of the carrier-carrier interactions in determining spin depolarization.

  3. Combustion Safety for Appliances Using Indoor Air (Fact Sheet), Building America Case Study: Technology Solutions for New and Existing Homes, Building Technologies Office (BTO)

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page onYouTube YouTube Note: Since the YouTube platformBuildingCoal Combustion ProductsCombustion Safety for Appliances Using

  4. Strain and stability of ultrathin Ge layers in Si/Ge/Si axial heterojunction nanowires

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Ross, Frances M.; Stach, Eric A.; Wen, Cheng -Yen; Reuter, Mark C.; Su, Dong

    2015-03-11T23:59:59.000Z

    The abrupt heterointerfaces in the Si/Ge materials system presents useful possibilities for electronic device engineering because the band structure can be affected by strain induced by the lattice mismatch. In planar layers, heterointerfaces with abrupt composition changes are difficult to realize without introducing misfit dislocations. However, in catalytically grown nanowires, abrupt heterointerfaces can be fabricated by appropriate choice of the catalyst. Here we grow nanowires containing Si/Ge and Si/Ge/Si structures respectively with sub-1nm thick Ge "quantum wells" and we measure the interfacial strain fields using geometric phase analysis. Narrow Ge layers show radial strains of several percent, with a correspondingmore »dilation in the axial direction. Si/Ge interfaces show lattice rotation and curvature of the lattice planes. We conclude that high strains can be achieved, compared to what is possible in planar layers. In addition, we study the stability of these heterostructures under heating and electron beam irradiation. The strain and composition gradients are supposed to the cause of the instability for interdiffusion.« less

  5. Thin SiGe virtual substrates for Ge heterostructures integration on silicon

    SciTech Connect (OSTI)

    Cecchi, S., E-mail: stefano.cecchi@mdm.imm.cnr.it; Chrastina, D.; Frigerio, J.; Isella, G. [L-NESS, Dipartimento di Fisica, Politecnico di Milano–Polo Territoriale di Como, Via Anzani 42, I-22100 Como (Italy); Gatti, E.; Guzzi, M. [L-NESS, Dipartimento di Scienza dei Materiali, Università di Milano Bicocca, via Cozzi 53, I-20126 Milano (Italy); Müller Gubler, E. [Electron Microscopy ETH Zurich, ETH Zurich, Auguste-Piccard-Hof 1, CH-8093 Zurich (Switzerland); Paul, D. J. [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2014-03-07T23:59:59.000Z

    The possibility to reduce the thickness of the SiGe virtual substrate, required for the integration of Ge heterostructures on Si, without heavily affecting the crystal quality is becoming fundamental in several applications. In this work, we present 1??m thick Si{sub 1?x}Ge{sub x} buffers (with x?>?0.7) having different designs which could be suitable for applications requiring a thin virtual substrate. The rationale is to reduce the lattice mismatch at the interface with the Si substrate by introducing composition steps and/or partial grading. The relatively low growth temperature (475?°C) makes this approach appealing for complementary metal-oxide-semiconductor integration. For all the investigated designs, a reduction of the threading dislocation density compared to constant composition Si{sub 1?x}Ge{sub x} layers was observed. The best buffer in terms of defects reduction was used as a virtual substrate for the deposition of a Ge/SiGe multiple quantum well structure. Room temperature optical absorption and photoluminescence analysis performed on nominally identical quantum wells grown on both a thick graded virtual substrate and the selected thin buffer demonstrates a comparable optical quality, confirming the effectiveness of the proposed approach.

  6. Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

    SciTech Connect (OSTI)

    Norris, D. J.; Qiu, Y.; Walther, T. [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Building, Mappin Street, Sheffield S1 3JD (United Kingdom); Dobbie, A.; Myronov, M. [Department of Physics, University of Warwick, Coventry CV4 7A (United Kingdom)

    2014-01-07T23:59:59.000Z

    This study investigates the onset of islanding (Stranski-Krastanow transition) in strained pure germanium (Ge) and dilute silicon-germanium (SiGe) alloy layers grown by chemical vapour deposition on Si(001) substrates. Integration of compositional profiles is compared to a novel method for quantification of X-ray maps acquired in cross-sectional scanning transmission electron microscopy, together with simulations of surface segregation of Ge. We show that Si{sub 1?x}Ge{sub x} alloys for germanium concentrations x???0.27 grow two-dimensionally and stay flat up to considerable layer thicknesses, while layers with concentrations in the range 0.28?Ge is ±(0.2–0.3) ML. Modelling shows that of the amount of germanium deposited, 0.7 ML segregate towards the free surface so that only ?2.3/x ML are directly incorporated in the layer within a few nanometres, in good agreement with our measurements. For pure Ge (x?=?1), this thickness is smaller than most values quoted in the literature, which we attribute to the high sensitivity of our method to fractional monolayer changes in the effective chemical width of such thin layers.

  7. Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*

    E-Print Network [OSTI]

    Bowers, John

    Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga* , Mike Morsea , Mario J. Panicciaa , Moshe, Charlottesville, VA 22904, USA Abstract: We demonstrate mesa-type and waveguide-type Ge/Si avalanche photodiodes. Research on the Ge/Si photodiodes, one of the fundamental components needed for building integrated silicon

  8. MOTION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2011-01-01T23:59:59.000Z

    MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.MOTION OF ELECTRON-HOLE DROPS IN Ge R. M. Westervelt, J. C.OF ELECTRON-HOLE DROPS IN Ge R M Westervelt, J C Culbertson

  9. Ge.Meyer -MPL-27.11.002 Status Tunerentwicklung

    E-Print Network [OSTI]

    Ge.Meyer -MPL- 27.11.002 Status Tunerentwicklung 1) Geschichte: Alter franz. Tuner weich, hatte Hysterese. Federkonstante: Gerechnet 5,4 µ/kN, gemessen 26,7 µ/kN (Faktor 5), Ge.Meyer gerechnet 14,6 µ Felder. 2) Tuner 0 / H.Kaiser, Ge.Meyer -MPL- Deshalb wurde ein neues Konzept überlegt. Dieses Konzept

  10. Conduction band discontinuity and electron confinement at the Si[subscript x]Ge[subscript 1?x]/Ge interface

    E-Print Network [OSTI]

    Mazzeo, G.

    Germanium rich heterostructures can constitute a valid alternative to Silicon for the confinement of single electron spins. The conduction band discontinuity in SiGe/Ge heterostructures grown on pure germanium substrate ...

  11. The MAGIC Telescope Project for Gamma Astronomy above 10 GeV

    E-Print Network [OSTI]

    N. Magnussen

    1998-05-14T23:59:59.000Z

    A project to construct a 17 m diameter imaging air Cherenkov telescope, called the MAGIC Telescope, is described. The aim of the project is to close the observation gap in the gamma-ray sky extending from 10 GeV as the highest energy measurable by space-borne experiments to 300 GeV, the lowest energy measurable by the current generation of ground-based Cherenkov telescopes. The MAGIC Telescope will incorporate several new features in order to reach the very low energy threshold. At the same time the new technology will yield an improvement in sensitivity in the energy region where current Cherenkov telescopes are measuring by about an order of magnitude.

  12. 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 711, 2001

    E-Print Network [OSTI]

    Leonard, John J.

    Preface 33rd International Lie`ge Colloquium on Ocean Dynamics Lie`ge, Belgium, May 7­11, 2001 The International Lie`ge Colloquium on Ocean Dynamics is organized annually. The topic differs from year to year. Assembling a group of active and eminent scien- tists from various countries and often different disci

  13. Direct Observation of Room-Temperature Polar Ordering in Colloidal GeTe Nanocrystals

    E-Print Network [OSTI]

    Polking, Mark J.

    2010-01-01T23:59:59.000Z

    99.997 %), 1-dodecanethiol (1-DDT, > 98 %), anhydrous 1,2Then, 0.03 g of dried 1-DDT was mixed with 1.5 mL of a 10stirring, and the 1-DDT/TOP-Te solution was immediately

  14. Ordered involutive operator spaces

    E-Print Network [OSTI]

    Blecher, David P; Neal, Matthew; Werner, Wend

    2007-01-01T23:59:59.000Z

    This is a companion to recent papers of the authors; here we construct the `noncommutative Shilov boundary' of a (possibly nonunital) selfadjoint ordered space of Hilbert space operators. The morphisms in the universal property of the boundary preserve order. As an application, we consider `maximal' and `minimal' unitizations of such ordered operator spaces.

  15. IMPRESS CONNECT DOCUMENT ORDERING

    E-Print Network [OSTI]

    Asaithambi, Asai

    IMPRESS CONNECT DOCUMENT ORDERING USER GUIDE FOR UNF August 2010 #12;OFFICEMAX IMPRESS CONNECT USERMax (case sensitive) Click on "Create New Custom Print Order" under Print & Document Services #12;The first landing page. You will see 3 options across the top of the landing page: Order Jobs, Track Jobs, Manage

  16. Microstructure study of the rare-earth intermetallic compounds R5(SixGe1-x)4 and R5(SixGe1-x)3

    SciTech Connect (OSTI)

    Cao, Qing

    2012-07-26T23:59:59.000Z

    The unique combination of magnetic properties and structural transitions exhibited by many members of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family (R = rare earths, 0 ? x ? 1) presents numerous opportunities for these materials in advanced energy transformation applications. Past research has proven that the crystal structure and magnetic ordering of the R{sub 5(Si{sub x}Ge{sub 1-x}){sub 4} compounds can be altered by temperature, magnetic field, pressure and the Si/Ge ratio. Results of this thesis study on the crystal structure of the Er{sub 5}Si{sub 4} compound have for the first time shown that the application of mechanical forces (i.e. shear stress introduced during the mechanical grinding) can also result in a structural transition from Gd{sub 5}Si{sub 4}-type orthorhombic to Gd{sub 5}Si{sub 2}Ge{sub 2}-type monoclinic. This structural transition is reversible, moving in the opposite direction when the material is subjected to low-temperature annealing at 500 ?C. Successful future utilization of the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family in novel devices depends on a fundamental understanding of the structure-property interplay on the nanoscale level, which makes a complete understanding of the microstructure of this family especially important. Past scanning electron microscopy (SEM) observation has shown that nanometer-thin plates exist in every R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} (“5:4”) phase studied, independent of initial parent crystal structure and composition. A comprehensive electron microscopy study including SEM, energy dispersive spectroscopy (EDS), selected area diffraction (SAD), and high resolution transmission electron microscopy (HRTEM) of a selected complex 5:4 compound based on Er rather than Gd, (Er{sub 0.9Lu{sub 0.1}){sub 5}Si{sub 4}, has produced data supporting the assumption that all the platelet-like features present in the R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} family are hexagonal R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 3} (“5:3”) phase and possess the same reported orientation relationship that exists for the Gd{sub 5}Ge{sub 4} and Gd{sub 5}Si{sub 2}Ge{sub 2} compounds, i.e. [010](102?){sub m} || [101?0](12?11){sub p}. Additionally, the phase identification in (Er{sub 0.9}Lu{sub 0.1}){sub 5}Si{sub 4} carried out using X-ray powder diffraction (XRD) techniques revealed that the low amount of 5:3 phase is undetectable in a conventional laboratory Cu K? diffractometer due to detection limitations, but that extremely low amounts of the 5:3 phase can be detected using high resolution powder diffraction (HRPD) employing a synchrotron source. These results suggest that use of synchrotron radiation for the study of R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds should be favored over conventional XRD for future investigations. The phase stability of the thin 5:3 plates in a Gd{sub 5}Ge{sub 4} sample was examined by performing long-term annealing at very high temperature. The experimental results indicate the plates are thermally unstable above 1200?C. While phase transformation of 5:3 to 5:4 occurs during the annealing, the phase transition is still fairly sluggish, being incomplete even after 24 hours annealing at this elevated temperature. Additional experiments using laser surface melting performed on the surface of a Ho{sub 5}(Si{sub 0.8}Ge{sub 0.}2){sub 4} sample showed that rapid cooling will suppress the precipitation of 5:3 plates. Bulk microstructure studies of polycrystalline and monocrystalline Gd{sub 5}Ge{sub 3} compounds examined using optical microscopy, SEM and TEM also show a series of linear features present in the Gd{sub 5}Ge{sub 3} matrix, similar in appearance in many ways to the 5:3 plates observed in R{sub 5}(Si{sub x}Ge{sub 1-x}){sub 4} compounds. A systematic microscopy analysis of these linear features revealed they also are thin plates with a stoichiometric composition of Gd{sub 5}Ge{sub 4} with an orthorhombic structure. The orientation relationship between the 5:3 matrix and the precipitate 5:4 thin plates was determined as [101?0] (12?11){s

  17. Role of nucleation sites on the formation of nanoporous Ge

    SciTech Connect (OSTI)

    Yates, B. R.; Darby, B. L.; Jones, K. S. [Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611-6400 (United States); Elliman, R. G. [Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, Australian Capital Territory 0200 (Australia)

    2012-09-24T23:59:59.000Z

    The role of nucleation sites on the formation of nanoporous Ge was investigated. Three Ge films with different spherical or columnar pore morphologies to act as inherent nucleation sites were sputtered on (001) Ge. Samples were implanted 90 Degree-Sign from incidence at 300 keV with fluences ranging from 3.0 Multiplication-Sign 10{sup 15} to 3.0 Multiplication-Sign 10{sup 16} Ge{sup +}/cm{sup 2}. Electron microscopy investigations revealed varying thresholds for nanoporous Ge formation and exhibited a stark difference in the evolution of the Ge layers based on the microstructure of the initial film. The results suggest that the presence of inherent nucleation sites significantly alters the onset and evolution of nanoporous Ge.

  18. Prompt Gamma Rays in {sup 77}Ge after Neutron Capture on {sup 76}Ge

    SciTech Connect (OSTI)

    Meierhofer, Georg; Grabmayr, Peter; Jochum, Josef [Physikalisches Institut, Eberhard Karls Universitaet Tuebingen, Auf der Morgenstelle 14, 72076 Tuebingen (Germany); Canella, Lea [Institut fuer Radiochemie, Technische Universitaet Muenchen, Walther-Meissner-Str. 3, 85748 Garching (Germany); Jolie, Jan; Kudejova, Petra; Warr, Nigel [Institut fuer Kernphysik, Universitaet zu Koeln, Zuelpicher Str. 77, 50937 Cologne (Germany)

    2009-01-28T23:59:59.000Z

    The observation of neutrinoless double beta decay would be proof of the Majorana nature of the neutrino. Half-lives for these decays are very long (for {sup 76}Ge:>10{sup 25} y), so background reduction and rejection is the major task for double beta experiments. The GERDA (GERmanium Detector Array) experiment at the Gran Sasso Laboratory of the INFN (LNGS) searches for neutrinoless double beta decay of {sup 76}Ge. The isotope {sup 76}Ge is an ideal candidate because it can be used as source and detector at the same time. A large remaining contribution to the background arises from the prompt gamma cascade after neutron capture by {sup 76}Ge followed by {beta}{sup -}-decay of {sup 77}Ge. Since the prompt gamma decay scheme is poorly known, measurements with isotopically enriched Germanium samples were carried out at the PGAA facility at the research reactor FRM II (Munich). With the known prompt gamma spectrum it will be possible to improve the overall veto efficiency of the GERDA experiment.

  19. Eleven new compounds in the RE-Cd-Ge systems (RE=Pr, Nd, Sm, Gd-Yb; Y): Crystal chemistry of the RE{sub 2}CdGe{sub 2} series

    SciTech Connect (OSTI)

    Guo Shengping; Meyers, John J.; Tobash, Paul H. [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States); Bobev, Svilen, E-mail: bobev@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

    2012-08-15T23:59:59.000Z

    A large new family of rare-earth metal-cadmium-germanides RE{sub 2}CdGe{sub 2} (RE=Y, Pr, Nd, Sm, Gd-Yb) has been synthesized and structurally characterized. All eleven structures have been established from single-crystal X-ray diffraction data and have been found to belong to the tetragonal Mo{sub 2}FeB{sub 2} structure type (ordered ternary variant of the U{sub 3}Si{sub 2} structure type-space group P4/mbm (No. 127), Z=2; Pearson symbol tP10). The structural variations among the three series of isostructural RE{sub 2}MgGe{sub 2}, RE{sub 2}InGe{sub 2}, and RE{sub 2}CdGe{sub 2} compounds are discussed, as well as the crystal chemistry changes as a function of the decreasing size of the rare-earth metals (lattice constants a=7.176(2)-7.4589(12) A and c=4.1273(14)-4.4356(13) A). The experimental results have been complemented by tight-binding linear muffin-tin orbital (TB-LMTO) electronic structure calculations. - Graphical abstract: More than 300 compounds have been reported to crystallize with the tetragonal U{sub 3}Si{sub 2} structure type, or the Mo{sub 2}FeB{sub 2} structure type, which is its ordered ternary variant. Among them, there are several large RE{sub 2}CdX{sub 2} classes, where the X-elements are typically late transition metals such as Cu, Ni, Au, Pd, Pt, and Rh. The new RE{sub 2}CdGe{sub 2} phases (RE=Y, Pr, Nd, Sm, Gd-Yb) increase the diversity and represent the first cadmium germanides. Highlights: Black-Right-Pointing-Pointer RE{sub 2}CdGe{sub 2} (RE=Y, Pr, Nd, Sm, Gd-Yb) are new ternary germanides. Black-Right-Pointing-Pointer Their structures can be recognized as a 1:1 intergrowth of CsCl- and AlB{sub 2}-like slabs. Black-Right-Pointing-Pointer The Ge atoms are covalently bound into Ge{sub 2} dumbbells. Black-Right-Pointing-Pointer Almost all RE{sub 2}CdGe{sub 2} phases are the first structurally characterized phases in the respective ternary RE-Cd-Ge systems.

  20. Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner, and David A. B. Miller

    E-Print Network [OSTI]

    Miller, David A. B.

    Material properties in SiGe/Ge quantum wells Rebecca K. Schaevitz*, Jonathan E. Roth, Onur Fidaner *Corresponding author: rschaevitz@stanford.edu Abstract: Photocurrent measurements in Ge quantum wells parameters for design of high-performance SiGe/Ge quantum well optoelectronics on silicon. Germanium

  1. Longitudinal double-spin asymmetry and cross section for inclusivejet production in polarized proton collisions at sqrt(s) = 200 GeV

    SciTech Connect (OSTI)

    Abelev, B.I.; Adams, J.; Aggarwal, M.M.; Ahammed, Z.; Amonett,J.; Anderson, B.D.; Anderson, M.; Arkhipkin, D.; Averichev, G.S.; Bai,Y.; Balewski, J.; Barannikova, O.; Barnby, L.S.; Baudot, J.; Bekele, S.; Belaga, V.V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Bhardwaj, S.; Bhasin, A.; Bhati, A.K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L.C.; Blyth, S.-L.; Bonner, B.E.; Botje, M.; Bouchet, J.; Brandin, A.V.; Bravar, A.; Bystersky, M.; Cadman, R.V.; Cai,X.Z.; Caines, H.; Calderon de la Barca Sanchez, M.; Castillo, J.; Catu,O.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen,H.F.; Chen, J.H.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Coffin, J.P.; Cormier, T.M.; Cosentino, M.R.; Cramer, J.G.; Crawford,H.J.; Das, D.; Das, S.; Daugherity, M.; de Moura, M.M.; Dedovich, T.G.; DePhillips, M.; Derevschikov, A.A.; Didenko, L.; Dietel, T.; Djawotho,P.; Dogra, S.M.; Dong, W.J.; Dong, X.; Draper, J.E.; Du, F.; Dunin, V.B.; Dunlop, J.C.; Dutta Mazumdar, M.R.; Eckardt, V.; Edwards, W.R.; Efimov,L.G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Filimonov, K.; Filip, P.; Finch,E.; Fine, V.; Fisyak, Y.; Fu, J.; Gagliardi, C.A.; Gaillard, L.; Ganti,M.S.; Ghazikhanian, V.; Ghosh, P.; Gonzalez, J.S.; Gorbunov, Y.G.; Gos,H.; Grebenyuk, O.; Grosnick, D.; Guertin, S.M.; Guimaraes, K.S.F.F.; Guo,Y.; Gupta, N.; Gutierrez, T.D.; Haag, B.; Hallman, T.J.; Hamed, A.; Harris, J.W.; He, W.; Heinz, M.; Henry, T.W.; Hepplemann, S.; Hippolyte,B.; Hirsch, A.; Hjort, E.; Hoffman, A.M.; Hoffmann, G.W.; Horner, M.J.; Huang, H.Z.; Huang, S.L.; Hughes, E.W.; Humanic, T.J.; Igo, G.; Jacobs,P.; Jacobs, W.W.; Jakl, P.; Jia, F.; Jiang, H.; Jones, P.G.; Judd, E.G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Khodyrev, V.Yu.; Kim, B.C.; Kiryluk, J.; Kisiel, A.; Kislov, E.M.; Klein,S.R.; Kocoloski, A.; Koetke, D.D.; et al.

    2006-08-10T23:59:59.000Z

    We report a measurement of the longitudinal double-spinasymmetry A_LL and the differential cross section for inclusivemidrapidity jet production in polarized proton collisions at sqrt(s)=200GeV. The cross section data cover transverse momenta 5GeV/c and agree with next-to-leading order perturbative QCD evaluations.The A_LL data cover 5GeV/c and disfavor at 98 percentC.L. maximal positive gluon polarization in the polarizednucleon.

  2. Energy Star Appliances

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power AdministrationField8, 2000Consumption Survey (CBECS)LaboratorySmart-Reserved-Power Sign

  3. Asymmetric Relaxation of SiGe in Patterned Si Line Structures

    SciTech Connect (OSTI)

    Wormington, Matthew [Bede Scientific Inc., 14 Inverness Drive East, Suite H-100, Centennial, CO 80112 (United States); Lafford, Tamzin; Godny, Stephane; Ryan, Paul [Bede plc, Belmont Business Park, Durham, DH1 1TW (United Kingdom); Loo, Roger; Hikavyy, Andriy; Caymax, Matty [IMEC Kapeldreef 75, B 3001 Leuven (Belgium); Bhouri, Nada [IMEC Kapeldreef 75, B 3001 Leuven (Belgium); Institut National Polytechnique de Grenoble, 46, avenue Felix Viallet, Grenoble Cedex 1 (France)

    2007-09-26T23:59:59.000Z

    High resolution X-ray diffraction (HRXRD) measurements were performed using a commercially-available X-ray metrology tool, the BedeMetrix-L, on small test pads containing arrays of SiGe line structures selectively deposited in Si recesses with various window dimensions. Reciprocal space maps (RSMs) were performed in two orthogonal <110> directions in order to determine the lattice parameter parallel and perpendicular to the lines. With narrow lines, asymmetric relaxation effects were seen: the SiGe was fully strained along the long dimension of the lines while there was significant relaxation along the short dimension of the lines. The magnitude of the relaxation increased significantly for lines with short dimension below about 1 {mu}m. We show how to determine the lattice parameters, and hence the strain of the SiGe in the [110] and [-110] directions, the Ge composition and the relaxation initially using RSMs, but with an extension to measurements more suitable for in-fab metrology.

  4. Upgrade of CEBAF from 6-GeV To 12-GeV: Status

    SciTech Connect (OSTI)

    Harwood, Leigh H.

    2013-04-01T23:59:59.000Z

    The CEBAF accelerator is being upgraded from 6 GeV to 12 GeV by the US Department of Energy. The accelerator upgrade is being done within the existing tunnel footprint. The accelerator upgrade includes: 10 new srfbased high-performance cryomodules plus RF systems, doubling the 2K helium plants capability, upgrading the existing beamlines to operate at nearly double the original performance envelope, and adding a beamline to a new experimental area. Construction is over 75% complete with final completion projected for late FY13. Details of the upgrade and status of the work will be presented.

  5. Interface and nanostructure evolution of cobalt germanides on Ge(001)

    SciTech Connect (OSTI)

    Grzela, T., E-mail: grzela@ihp-microelectronics.com; Schubert, M. A. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Koczorowski, W. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Capellini, G. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); Dipartimento di Scienze, Università degli Studi Roma Tre, I-00146 Roma (Italy); Czajka, R. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); Radny, M. W. [Institute of Physics, Poznan University of Technology, Nieszawska 13A, 60-965 Poznan (Poland); School of Mathematical and Physical Sciences, The University of Newcastle, University Drive, Callaghan NSW, 2308 (Australia); Curson, N.; Schofield, S. R. [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, London, WC1H 0AH,United Kingdom (United Kingdom); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany); BTU Cottbus, Konrad-Zuse Str. 1, 03046 Cottbus (Germany)

    2014-02-21T23:59:59.000Z

    Cobalt germanide (Co{sub x}Ge{sub y}) is a candidate system for low resistance contact modules in future Ge devices in Si-based micro and nanoelectronics. In this paper, we present a detailed structural, morphological, and compositional study on Co{sub x}Ge{sub y} formation on Ge(001) at room temperature metal deposition and subsequent annealing. Scanning tunneling microscopy and low energy electron diffraction clearly demonstrate that room temperature deposition of approximately four monolayers of Co on Ge(001) results in the Volmer Weber growth mode, while subsequent thermal annealing leads to the formation of a Co-germanide continuous wetting layer which evolves gradually towards the growth of elongated Co{sub x}Ge{sub y} nanostructures. Two types of Co{sub x}Ge{sub y} nanostructures, namely, flattop- and ridge-type, were observed and a systematic study on their evolution as a function of temperature is presented. Additional transmission electron microscopy and x-ray photoemission spectroscopy measurements allowed us to monitor the reaction between Co and Ge in the formation process of the Co{sub x}Ge{sub y} continuous wetting layer as well as the Co{sub x}Ge{sub y} nanostructures.

  6. WAPA-169 Rate Order

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    69 Rate Order Western is proposing adjustments to the Salt Lake City Area Integrated Projects firm power rate and the Colorado River Storage Project Transmission and ancillary...

  7. Patent Record Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level:Energy: Grid Integration Redefining What's Possible for RenewableSpeedingBiomassPPPO WebsitePalms Village ResortEnergyL L 2PatentGE's E.

  8. Crowdsourcing Software Announcement | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE, MIT

  9. Crowdsourcing Software Award | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville Power Administration would likeConstitution4 Department of EnergyCross-SectorDepartment ofGE,

  10. Brazil Technology Center | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadapInactiveVisiting the TWPSuccess Stories Site MapSolarAboutTaubmanBiofuels Research at GE's

  11. Treating and Reusing Produced Water | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of ScienceandMesa del SolStrengthening a solidSynthesisAppliances

  12. Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy spectroscopy

    E-Print Network [OSTI]

    Neumark, Daniel M.

    Study of the low-lying states of Ge2 and Ge2 using negative ion zero electron kinetic energy The low-lying states of Ge2 and Ge2 are probed using negative ion zero electron kinetic energy ZEKE spectroscopy. The ZEKE spectrum of Ge2 yields an electron affinity of 2.035 0.001 eV for Ge2, as well as term

  13. Directives System Order

    Broader source: Directives, Delegations, and Requirements [Office of Management (MA)]

    1995-10-16T23:59:59.000Z

    The order prescribes the process for development of Policy Statements, Orders, Notices, Manuals and Guides, which are intended to guide, inform, and instruct employees in the performance of their jobs, and enable them to work effectively within the Department and with agencies, contractors, and the public.

  14. A New Look at the Galactic Diffuse GeV

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    ;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected #12;Gamma-ray Detectors from 10s MeV to 100s GeV Gamma-rays' trajectories cannot be directly detected Physics 1 #12;Overview Diffuse gamma-ray emission The Galactic diffuse gamma-ray GeV excess Discussion

  15. Structure and vibrations of different charge Ge impurity in ?-quartz

    SciTech Connect (OSTI)

    Kislov, A. N., E-mail: a.n.kislov@urfu.ru; Mikhailovich, A. P., E-mail: a.n.kislov@urfu.ru; Zatsepin, A. F., E-mail: a.n.kislov@urfu.ru [Ural Federal University, 19 Mira St., Yekaterinburg, 620002 (Russian Federation)

    2014-10-21T23:59:59.000Z

    Atomic structure and localized vibrations of ??SiO{sub 2}:Ge are studied using computer modeling techniques. The simulation was carried out by the lattice dynamics calculation of the local density of vibrational states. Local structures parameters are calculated, localized symmetrized vibrations frequency caused by Ge impurity in different charge states are defined. The movements of atoms located near Ge impurity are analyzed and their contribution into localized vibrations of different type is evaluated.

  16. Structural and phonon transmission study of Ge-Au-Ge eutectically bonded interfaces

    SciTech Connect (OSTI)

    Knowlton, W.B. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

    1995-07-01T23:59:59.000Z

    This thesis presents a structural analysis and phonon transparency investigation of the Ge-Au-Ge eutectic bond interface. Interface development was intended to maximize the interfacial ballistic phonon transparency to enhance the detection of the dark matter candidate WIMPs. The process which was developed provides an interface which produces minimal stress, low amounts of impurities, and insures Ge lattice continuity through the interface. For initial Au thicknesses of greater than 1,000 {angstrom} Au per substrate side, eutectic epitaxial growth resulted in a Au dendritic structure with 95% cross sectional and 90% planar Au interfacial area coverages. In sections in which Ge bridged the interface, lattice continuity across the interface was apparent. Epitaxial solidification of the eutectic interface with initial Au thicknesses < 500 A per substrate side produced Au agglomerations thereby reducing the Au planar interfacial area coverage to as little as 30%. The mechanism for Au coalescence was attributed to lateral diffusion of Ge and Au in the liquid phase during solidification. Phonon transmission studies were performed on eutectic interfaces with initial Au thicknesses of 1,000 {angstrom}, 500 {angstrom}, and 300 {angstrom} per substrate side. Phonon imaging of eutectically bonded samples with initial Au thicknesses of 300 {angstrom}/side revealed reproducible interfacial percent phonon transmissions from 60% to 70%. Line scan phonon imaging verified the results. Phonon propagation TOF spectra distinctly showed the predominant phonon propagation mode was ballistic. This was substantiated by phonon focusing effects apparent in the phonon imaging data. The degree of interface transparency to phonons and resulting phonon propagation modes correlate with the structure of the interface following eutectic solidification. Structural studies of samples with initial Au thickness of 1,000 {angstrom}/side appear to correspond with the phonon transmission study.

  17. GE Technology to Help Canada Province Meet Growing Energy Needs

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    funding and collaboration models at its European Global Research Center near Munich, Germany. Mark Little, GE's Senior Vice President and Chief Technology Officer, and thought...

  18. Limitless Hot Gas Path Cooling Design | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Organization at GE Global Research, one such potent combination already taking shape is Additive Manufacturing and High Pressure Turbine Blade Cooling. Additive Manufacturing...

  19. GE researchers perform simulations in pursuit of more efficient...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    GE researchers perform simulations in pursuit of more efficient jet engines and wind turbines Author: John Spizzirri . July 1, 2014 Printer-friendly version The recent addition of...

  20. How Will We Explore Earth's Final Frontier? | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    see how technology is helping us understand, utilize and protect the last frontier on earth. At GE Global Research's Rio de Janiero location, researchers are developing...

  1. Media Advisory - Jefferson Lab 12 GeV Upgrade Groundbreaking...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for its 310 million 12 GeV Upgrade project. When: Tuesday, April 14, 2009. Where: CEBAF Center, Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue,...

  2. GE's Arnie Lund Discusses User Experience at an Industrial Scale...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    at an Industrial Scale Arnie Lund, manager of the UX Industrial Innovation Lab at GE Global Research in San Ramon, Calif, recently spoke to the Farstuff Podcast about...

  3. approaching cryogenic ge: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Very low Weinreb, Sander 2 Draft 040509 A new high-background-rejection dark matter Ge cryogenic Computer Technologies and Information Sciences Websites Summary: Draft...

  4. Titan propels GE wind turbine research into new territory | ornl...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Titan propels GE wind turbine research into new territory January 17, 2014 The amount of global electricity supplied by wind, the world's fastest growing energy source, is expected...

  5. Hadron production from $?-Deuteron$ scattering at $\\sqrt{s}=17 GeV$ at COMPASS

    E-Print Network [OSTI]

    Astrid Morreale

    2011-08-29T23:59:59.000Z

    Hadrons proceeding from quasi-real photo-production are one of the many probes accesible at the Common Muon Proton Apparatus for Structure and Spectroscopy (COMPASS) at CERN. These hadrons provide information on the scattering between photon and partons through \\gamma-gluon(g) direct channels as well as q-g resolved processes. Comparisons of unpolarized differential cross section measurements to next-to-leading order (NLO) pQCD calculations are essential to develop our understanding of proton-proton and lepton-nucleon scattering at varying center of mass energies. These measurements are important to asses the applicability of NLO pQCD in interpreting polarized processes. In this talk we will present the unidentified charged separated hadron cross-sections measured by the COMPASS experiment at center of mass energy of \\sqrt{s}=17GeV, low Q^{2} (Q^{2}1.0 GeV/c.)

  6. Predictions for {radical} (s) =200A; GeV Au+Au collisions from relativistic hydrodynamics

    SciTech Connect (OSTI)

    Schlei, B.R. [Physics Division, P-25, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Physics Division, P-25, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States); Schlei, B.R.; Strottman, D. [Theoretical Division, DDT-DO, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)] [Theoretical Division, DDT-DO, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    1999-01-01T23:59:59.000Z

    The relativistic hydrodynamical model HYLANDER-C is used to give estimates for single inclusive particle momentum spectra in {radical} (s) =200 GeV/nucleon Au+Au collisions that will be investigated experimentally in the near future. The predictions are based on initial conditions that the initial fireball has a longitudinal extension of 1.6 fm and an initial energy density of 30.8 GeV/fm{sup 3} as obtained from a cascade model. For the collision energy considered here, different stopping scenarios are explored for the first time. Our calculations give particle yields of the order of 10thinsp000 to 20thinsp000 charged particles per event. {copyright} {ital 1999} {ital The American Physical Society}

  7. A proposal for a 1 GeV plasma-wakefield acceleration experiment at SLAC

    SciTech Connect (OSTI)

    Katsouleas, T.; Lee, S. [Univ. of Southern California, Los Angeles, CA (United States); Assmann, R. [Stanford Linear Accelerator Center, Menlo Park, CA (United States)] [and others

    1997-07-01T23:59:59.000Z

    A plasma-based wakefield acceleration (PWFA) experiment is proposed that will accelerate parts of an SLC bunch by up to 1 GeV/m over a length of 1 m. A single SLC bunch is used to both induce wakefields in the one meter long plasma and to witness the resulting beam acceleration. The proposed experiment will explore and further develop the techniques that are needed to apply high-gradient plasma wakefield acceleration to large scale accelerators. The one meter length of the experiment is about two orders of magnitude larger than other high-gradient PWFA experiments and the 1 GeV/m accelerating gradient is roughly ten times larger than that achieved with conventional metallic structures. Using existing SLAC facilities, the proposed experiment will allow the study of high-gradient acceleration at the forefront of advanced accelerator research.

  8. An alternative route for efficient optical indirect-gap excitation in Ge

    SciTech Connect (OSTI)

    Sakamoto, Tetsuya; Hayashi, Shuhei; Fukatsu, Susumu, E-mail: cfkatz@mail.ecc.u-tokyo.ac.jp [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); Yasutake, Yuhsuke [Graduate School of Arts and Sciences, The University of Tokyo, Komaba, Meguro, Tokyo 153-8902 (Japan); PRESTO, Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012 (Japan)

    2014-07-28T23:59:59.000Z

    We explored optical excitation pathways in the multivalley semiconductor Ge in an attempt to expedite selective electron injection into the indirect L-band-edge. An off-peak resonant excitation route was developed, which offers the pumping efficiency outperforming the phonon-assisted near-indirect-edge absorption by more than six orders of magnitude. The valley selectivity results from the intra-valley relaxation that separates electrons and holes in momentum space following excitation. Fortuitously, the widely used green laser, 532?nm, is found to be nearly ideally suited to the efficient L-valley-selective excitation in Ge. Such valley-specific pumping may help clarify the otherwise complicated electron dynamics involving intervalley processes.

  9. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001) substrate

    SciTech Connect (OSTI)

    Ye, Han, E-mail: Dabombyh@aliyun.com; Yu, Zhongyuan [State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, P.R.China (China)

    2014-11-15T23:59:59.000Z

    Patterning pit on Si(001) substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in (105) pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP) in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  10. Structural and electrical studies of ultrathin layers with Si{sub 0.7}Ge{sub 0.3} nanocrystals confined in a SiGe/SiO{sub 2} superlattice

    SciTech Connect (OSTI)

    Vieira, E. M. F.; Martin-Sanchez, J.; Rolo, A. G.; Levichev, S.; Gomes, M. J. M. [Centre of Physics and Physics Department, University of Minho, 4710 - 057 Braga (Portugal); Parisini, A. [CNR-IMM Sezione di Bologna, via P. Gobetti 101, 40129 Bologna (Italy); Buljan, M.; Capan, I. [Rudjer Boskovic Institute, Bijenicka cesta 54, 10000 Zagreb (Croatia); Alves, E.; Barradas, N. P. [ITN, Ion Beam Laboratory, Unit of Physics and Accelerators, E.N. 10, 2686-953 Sacavem (Portugal); Conde, O. [Physics Department and ICEMS, University of Lisbon, 1749-016 Lisboa (Portugal); Bernstorff, S. [Sincrotrone Trieste, 34149 Basovizza (Italy); Chahboun, A. [Centre of Physics and Physics Department, University of Minho, 4710 - 057 Braga (Portugal); Physics Department, FST Tanger, Tanger (Morocco)

    2012-05-15T23:59:59.000Z

    In this work, SiGe/SiO{sub 2} multi-layer (ML) films with layer thickness in the range of a few nanometers were successfully fabricated by conventional RF-magnetron sputtering at 350 deg. C. The influence of the annealing treatment on SiGe nanocrystals (NCs) formation and crystalline properties were investigated by Raman spectroscopy and grazing incidence x-ray diffraction. At the annealing temperature of 800 deg. C, where well defined SiGe NCs were observed, a thorough structural investigation of the whole ML structure has been undertaken by Rutherford backscattering spectroscopy, grazing incidence small angle x-ray scattering, high resolution transmission electron microscopy, and annular dark field scanning transmission electron microscopy. Our results show that the onset of local modifications to the ML composition takes place at this temperature for annealing times of the order of a few tens of minutes with the formation of defective regions in the upper portion of the ML structure. Only the very first layers over the Si substrate appear immune to this problem. This finding has been exploited for the fabrication of a defect free metal-oxide-semiconductor structure with a well-defined single layer of SiGe NCs. A memory effect attributed to the presence of the SiGe NCs has been demonstrated by high frequency capacitance-voltage measurements.

  11. First-Order Differential

    E-Print Network [OSTI]

    mass system depicted in Figure 1.1.2, where, for simplicity, we are ...... The primary aim of this chapter is to study the ?rst-order differential equation d l ftx. y). (1.3.1)

  12. Superconductors with Topological Order

    E-Print Network [OSTI]

    M. C. Diamantini; P. Sodano; C. A. Trugenberger

    2005-11-18T23:59:59.000Z

    We propose a mechanism of superconductivity in which the order of the ground state does not arise from the usual Landau mechanism of spontaneous symmetry breaking but is rather of topological origin. The low-energy effective theory is formulated in terms of emerging gauge fields rather than a local order parameter and the ground state is degenerate on topologically non-trivial manifolds. The simplest example of this mechanism of superconductivty is concretely realized as global superconductivty in Josephson junction arrays.

  13. Structural and optical properties of GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells

    SciTech Connect (OSTI)

    Aleshkin, V. Ya.; Dubinov, A. A., E-mail: sanya@ipm.sci-nnov.ru; Drozdov, M. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Zvonkov, B. N. [Nizhni Novgorod State University, Research Physical Technical Institute (Russian Federation); Kudryavtsev, K. E.; Tonkikh, A. A.; Yablonskiy, A. N. [Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation); Werner, P. [Max Planck Institute of Microstructure Physics (Germany)

    2013-05-15T23:59:59.000Z

    GaAs-based heterostructures with Ge and Ge/InGaAs quantum wells are grown by laser-assisted sputtering. Structural and optical studies of the heterostructures are carried out. A broad photoluminescence line is observed in the wavelength range from 1300 to 1650 nm. The line corresponds to indirect transitions in the momentum space of the Ge quantum wells and to transitions between the In{sub 0.28}Ga{sub 0.72}As and Ge layers, indirect in coordinate space, but direct in momentum space.

  14. Serial and parallel Si, Ge, and SiGe direct-write with scanning probes and conducting stamps

    SciTech Connect (OSTI)

    Vasko, Stephanie E.; Kapetanovic, Adnan; Talla, Vamsi; Brasino, Michael D.; Zhu, Zihua; Scholl, Andreas; Torrey, Jessica D.; Rolandi, Marco

    2011-05-16T23:59:59.000Z

    Precise materials integration in nanostructures is fundamental for future electronic and photonic devices. We demonstrate Si, Ge, and SiGe nanostructure direct-write with deterministic size, geometry, and placement control. The biased probe of an atomic force microscope (AFM) reacts diphenylsilane or diphenylgermane to direct-write carbon-free Si, Ge, and SiGe nano and heterostructures. Parallel directwrite is available on large areas by substituting the AFM probe with conducting microstructured stamps. This facile strategy can be easily expanded to a broad variety of semiconductor materials through precursor selection.

  15. Shell model description of Ge isotopes

    E-Print Network [OSTI]

    J. G. Hirsch; P. C. Srivastava

    2012-04-12T23:59:59.000Z

    A shell model study of the low energy region of the spectra in Ge isotopes for $38\\leq N\\leq 50$ is presented, analyzing the excitation energies, quadrupole moments, $B(E2)$ values and occupation numbers. The theoretical results have been compared with the available experimental data. The shell model calculations have been performed employing three different effective interactions and valence spaces.We have used two effective shell model interactions, JUN45 and jj44b, for the valence space $f_{5/2} \\, p \\,g_{9/2}$ without truncation. To include the proton subshell $f_{7/2}$ in valence space we have employed the $fpg$ effective interaction due to Sorlin {\\it et al.}, with $^{48}$Ca as a core and a truncation in the number of excited particles.

  16. 3 GeV Injector Design Handbook

    SciTech Connect (OSTI)

    Wiedemann, H.; /SLAC, SSRL

    2009-12-16T23:59:59.000Z

    This Design Handbook is intended to be the main reference book for the specifications of the 3 GeV SPEAR booster synchrotron project. It is intended to be a consistent description of the project including design criteria, key technical specifications as well as current design approaches. Since a project is not complete till it's complete changes and modifications of early conceptual designs must be expected during the duration of the construction. Therefore, this Design Handbook is issued as a loose leaf binder so that individual sections can be replaced as needed. Each page will be dated to ease identification with respect to latest revisions. At the end of the project this Design Handbook will have become the 'as built' reference book of the injector for operations and maintenance personnel.

  17. Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures

    E-Print Network [OSTI]

    Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 ÕSi0.75Ge0.25 using various H2 pressures Gianni Taraschi,a) Sajan Saini, Wendy W. Fan, Lionel C Ge in SiO2 was synthesized by the reduction of Si0.75Ge0.25O2 with H2 , at various annealing

  18. High Capacity Li Ion Battery Anodes Using Ge Nanowires

    E-Print Network [OSTI]

    Cui, Yi

    High Capacity Li Ion Battery Anodes Using Ge Nanowires Candace K. Chan, Xiao Feng Zhang, and Yi Cui efficiency > 99%. Structural characterization revealed that the Ge nanowires remain intact and connected nanowire anodes are promising candidates for the development of high-energy-density lithium batteries

  19. Project-X Workshop 120 GeV Target

    E-Print Network [OSTI]

    McDonald, Kirk

    Project-X Workshop 120 GeV Target Summary ­ Workshop # 1 N. Simos, M. Martens #12;Project-X Workshop Challenges OVERVIEW Driven by 120 GeV/170 TP-per-spill · Short Term: 170 TPs/2us-spill (materials an existing 400 kW facility ­ Constraints #12;Project-X Workshop Presentations - Discussions · Engineering

  20. Band-engineered Ge-on-Si lasers

    E-Print Network [OSTI]

    Liu, Jifeng

    We report optically-pumped Ge-on-Si lasers with direct gap emission near 1600 nm at room temperature. The Ge-on-Si material was band-engineered by tensile strain and n-type doping to compensate the energy difference between ...

  1. Excess vacancies in high energy ion implanted SiGe

    SciTech Connect (OSTI)

    Koegler, R.; Muecklich, A.; Skorupa, W.; Peeva, A.; Kuznetsov, A. Yu.; Christensen, J. S.; Svensson, B. G. [Forschungszentrum Rossendorf, PF 510119, D-01314 Dresden (Germany); Institute of Solid State Physics BAS, Boulevard Tzarigradsko Chaussee 72, 1784 Sofia (Bulgaria); Deparment of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway); Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo (Norway)

    2007-02-01T23:59:59.000Z

    Excess vacancies generated by high energy implantation with 1.2 MeV Si{sup +} and 2 MeV Ge{sup +} ions in SiGe were investigated after rapid thermal annealing at 900 degree sign C. Excess vacancies were probed by decoration with Cu and measuring the Cu profile by secondary ion mass spectrometry. Cross section transmission electron microscopy of cleaved specimen enabled to visualize nanocavities resulting from agglomeration of excess vacancies. The ion-induced damage in SiGe increases with increasing Ge fraction of the alloy. The amorphization threshold decreases and the extension of a buried amorphous layer increases for given implantation and annealing conditions. In contrast to ballistic simulations of excess defect generation where perfect local self-annihilation is assumed the concentrations of excess vacancies and excess interstitials in SiGe increase with increasing Ge fraction. The main contribution to the high excess vacancy concentration in SiGe results from the inefficient recombination of vacancies and interstitials. The widely used +1 model describing the ion-induced damage in Si is not valid for SiGe.

  2. Volcanic rifting at Martian grabens Daniel Me`ge,1

    E-Print Network [OSTI]

    Mege, Daniel

    Volcanic rifting at Martian grabens Daniel Me`ge,1 Anthony C. Cook,2,3 Erwan Garel,4 Yves: Solar System Objects: Mars; 8121 Tectonophysics: Dynamics, convection currents and mantle plumes; 8010: Me`ge, D., A. C. Cook, E. Garel, Y. Lagabrielle, and M.-H. Cormier, Volcanic rifting at Martian

  3. Magnetic behavior of LaMn{sub 2}(Si{sub (1?x)}Ge{sub x}){sub 2} compounds characterized by magnetic hyperfine field measurements

    SciTech Connect (OSTI)

    Bosch-Santos, B., E-mail: brianna@usp.br; Carbonari, A. W.; Cabrera-Pasca, G. A.; Saxena, R. N. [Instituto de Pesquisas Energéticas e Nucleares, University of São Paulo, 05508-000 São Paulo (Brazil)

    2014-05-07T23:59:59.000Z

    The temperature dependence of the magnetic hyperfine field (B{sub hf}) at Mn atom sites was measured in LaMn{sub 2}(Si{sub (1?x)}Ge{sub x}){sub 2}, with 0???x???1, compounds with perturbed ??? angular correlation spectroscopy using {sup 111}In({sup 111}Cd) as probe nuclei in the temperature range from 20?K to 480?K. The results show a transition from antiferromagnetic to ferromagnetic ordering for all studied compounds when Ge gradually replaces Si and allowed an accurate determination of the Néel temperature (T{sub N}) for each compound. It was observed that T{sub N} decreases when Ge concentration increases. Conversely, the Curie temperature increases with increase of Ge concentration. This remarkable change in the behavior of the transition temperatures is discussed in terms of the Mn-Mn distance and ascribed to a change in the exchange constant J{sub ex}.

  4. Ge interface engineering using ultra-thin La{sub 2}O{sub 3} and Y{sub 2}O{sub 3} films: A study into the effect of deposition temperature

    SciTech Connect (OSTI)

    Mitrovic, I. Z., E-mail: ivona@liverpool.ac.uk; Weerakkody, A. D.; Sedghi, N.; Hall, S. [Department of Electrical Engineering and Electronics, University of Liverpool, Brownlow Hill, Liverpool L69 3GJ (United Kingdom); Althobaiti, M.; Dhanak, V. R.; Linhart, W. M.; Veal, T. D. [Department of Physics and Stephenson Institute for Renewable Energy, University of Liverpool, Liverpool L69 7ZF (United Kingdom); Chalker, P. R. [Department of Engineering, University of Liverpool, Brownlow Hill, Liverpool L69 3GH (United Kingdom); Tsoutsou, D.; Dimoulas, A. [NCSR Demokritos, MBE Laboratory, Institute of Materials Science, 153 10 Athens (Greece)

    2014-03-21T23:59:59.000Z

    A study into the optimal deposition temperature for ultra-thin La{sub 2}O{sub 3}/Ge and Y{sub 2}O{sub 3}/Ge gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for effective passivation of the Ge interface. A detailed comparison between the two lanthanide oxides (La{sub 2}O{sub 3} and Y{sub 2}O{sub 3}) in terms of band line-up, interfacial features, and reactivity to Ge using medium energy ion scattering, vacuum ultra-violet variable angle spectroscopic ellipsometry (VUV-VASE), X-ray photoelectron spectroscopy, and X-ray diffraction is shown. La{sub 2}O{sub 3} has been found to be more reactive to Ge than Y{sub 2}O{sub 3}, forming LaGeO{sub x} and a Ge sub-oxide at the interface for all deposition temperature studied, in the range from 44?°C to 400?°C. In contrast, Y{sub 2}O{sub 3}/Ge deposited at 400?°C allows for an ultra-thin GeO{sub 2} layer at the interface, which can be eliminated during annealing at temperatures higher than 525?°C leaving a pristine YGeO{sub x}/Ge interface. The Y{sub 2}O{sub 3}/Ge gate stack deposited at lower temperature shows a sub-band gap absorption feature fitted to an Urbach tail of energy 1.1?eV. The latter correlates to a sub-stoichiometric germanium oxide layer at the interface. The optical band gap for the Y{sub 2}O{sub 3}/Ge stacks has been estimated to be 5.7?±?0.1?eV from Tauc-Lorentz modelling of VUV-VASE experimental data. For the optimal deposition temperature (400?°C), the Y{sub 2}O{sub 3}/Ge stack exhibits a higher conduction band offset (>2.3?eV) than the La{sub 2}O{sub 3}/Ge (?2?eV), has a larger band gap (by about 0.3?eV), a germanium sub-oxide free interface, and leakage current (?10{sup ?7}?A/cm{sup 2} at 1?V) five orders of magnitude lower than the respective La{sub 2}O{sub 3}/Ge stack. Our study strongly points to the superiority of the Y{sub 2}O{sub 3}/Ge system for germanium interface engineering to achieve high performance Ge Complementary Metal Oxide Semiconductor technology.

  5. Excess carrier lifetimes in Ge layers on Si

    SciTech Connect (OSTI)

    Geiger, R., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch; Sigg, H., E-mail: richard.geiger@psi.ch, E-mail: hans.sigg@psi.ch [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Frigerio, J.; Chrastina, D.; Isella, G. [L-NESS, Dipartimento di Fisica del Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Süess, M. J. [Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, 5232 Villigen PSI (Switzerland); Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Scientific Center for Optical and Electron Microscopy (SCOPEM), ETH Zurich, 8093 Zurich (Switzerland); Spolenak, R. [Laboratory for Nanometallurgy, Department of Materials Science, ETH Zurich, 8093 Zurich (Switzerland); Faist, J. [Institute for Quantum Electronics, ETH Zurich, 8093 Zurich (Switzerland)

    2014-02-10T23:59:59.000Z

    The excess charge carrier lifetimes in Ge layers grown on Si or germanium-on-insulator are measured by synchrotron based pump-probe transmission spectroscopy. We observe that the lifetimes do not strongly depend on growth parameters and annealing procedure, but on the doping profile. The defect layer at the Ge/Si interface is found to be the main non-radiative recombination channel. Therefore, the longest lifetimes in Ge/Si (2.6?ns) are achieved in sufficiently thick Ge layers with a built-in field, which repels electrons from the Ge/Si interface. Longer lifetimes (5.3?ns) are obtained in overgrown germanium-on-insulator due to the absence of the defective interface.

  6. Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe

    E-Print Network [OSTI]

    Structural phase transitions on the nanoscale: The crucial pattern in the phase-change materials Ge2Sb2Te5 and GeTe J. Akola1,2 and R. O. Jones1 1Institut für Festkörperforschung, Forschungszentrum to characterize the amorphous structure of the prototype materials Ge2Sb2Te5 and GeTe. In both, there is long

  7. III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 SiGe Single-Hole Transistor Fabricated by AFM Oxidation and Epitaxial Regrowth

    E-Print Network [OSTI]

    III International Conference on SiGe(C) Epitaxy and Heterostructures, NM, Mar. 2003 110 SiGe Single, West Lafayette, IN 47907, U.S.A. Nanodevices on Si/SiGe heterostructures are of growing interest [1 the performance of the devices. In this paper, we demonstrate a reproducible single-hole transistor SiGe device

  8. The role of straining and morphology in thermal conductivity of a set of SiGe superlattices and biomimetic SiGe nanocomposites

    E-Print Network [OSTI]

    Tomar, Vikas

    The role of straining and morphology in thermal conductivity of a set of Si­Ge superlattices and biomimetic Si­Ge nanocomposites This article has been downloaded from IOPscience. Please scroll down to see and morphology in thermal conductivity of a set of Si­Ge superlattices and biomimetic Si­Ge nanocomposites Vikas

  9. On atomic structure of Ge huts growing on the Ge/Si(001) wetting layer

    SciTech Connect (OSTI)

    Arapkina, Larisa V.; Yuryev, Vladimir A. [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)] [A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street, Moscow, 119991 (Russian Federation)

    2013-09-14T23:59:59.000Z

    Structural models of growing Ge hut clusters—pyramids and wedges—are proposed on the basis of data of recent STM investigations of nucleation and growth of Ge huts on the Si(001) surface in the process of molecular beam epitaxy. It is shown that extension of a hut base along <110> directions goes non-uniformly during the cluster growth regardless of its shape. Growing pyramids, starting from the second monolayer, pass through cyclic formation of slightly asymmetrical and symmetrical clusters, with symmetrical ones appearing after addition of every fourth monolayer. We suppose that pyramids of symmetrical configurations composed by 2, 6, 10, etc., monolayers over the wetting layer are more stable than asymmetrical ones. This might explain less stability of pyramids in comparison with wedges in dense arrays forming at low temperatures of Ge deposition. Possible nucleation processes of pyramids and wedges on wetting layer patches from identical embryos composed by 8 dimers through formation of 1 monolayer high 16-dimer nuclei different only in their symmetry is discussed. Schematics of these processes are presented. It is concluded from precise STM measurements that top layers of wetting layer patches are relaxed when huts nucleate on them.

  10. Ratio of jet cross sections at root s=630 GeV and 1800 GeV

    E-Print Network [OSTI]

    Baringer, Philip S.; Bean, Alice; Coppage, Don; Hebert, C.

    2001-03-01T23:59:59.000Z

    The DO Collaboration has measured the inclusive jet cross section in (p) over barp collisions at roots = 630 GeV. The results for pseudorapidities \\ eta \\ < 0.5 are combined with our previous results at roots = 1800 GeV ...

  11. Ion Implanted Ge:B Far Infrard Blocked Impurity Band Detectors

    E-Print Network [OSTI]

    Beeman, J.W.; Goyal, S.; Reichertz, L.A.; Haller, E.E.

    2008-01-01T23:59:59.000Z

    +16 1.E+15 1.E+14 Depth into Ge Crystal Surface (Å) Figure 5devices does not match that of Ge:Ga photoconductors, whichimplants or stacking devices) Ge IBIB detectors will reach

  12. ALFVEN-WAVE OSCILLATIONS IN A SPHERE, WITH APPLICATIONS TO ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Markiewicz, R.S.

    2011-01-01T23:59:59.000Z

    Rev. B 13,4626 (1976). For Ge(4:2) m is the average of thediscussed for EHD in unstressed Ge (B II )TO ELECI'RON-OOLE DROPS IN Ge R. S. Markiewicz January 1978

  13. NUCLEATION PHENOMENA IN THE FORMATION OF ELECTRON-HOLE DROPS IN Ge

    E-Print Network [OSTI]

    Westervelt, R.M.

    2010-01-01T23:59:59.000Z

    lO cjl(K) Symbol erg cm ) Ge - 0.064 T2 Ref. x x Si Ref. T2constructed the ultra-sensitive Ge photodetector which wasand method of mounting. The Ge sample is electrically and

  14. Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by In Situ Raman Spectroscopy

    E-Print Network [OSTI]

    2008-01-01T23:59:59.000Z

    Photo-oxidation of Ge Nanocrystals: Kinetic Measurements byBerkeley, CA, 94720 ABSTRACT Ge nanocrystals are formed inthe Raman spectra of the Ge nanocrystals in-situ. The

  15. Ferromagnetism in Mn-Implanted Epitaxially Grown Ge on Si(100)

    E-Print Network [OSTI]

    Guchhait, S.

    2011-01-01T23:59:59.000Z

    segregation in Mn-doped Ge”, Journal of Applied Physics 101,Room-temperature ferromagnetism in Ge 1-x Mn x nanowires”,BC high-?/metal gate Ge/C alloy pMOSFETs fabricated directly

  16. Symmetry and Topological Order

    E-Print Network [OSTI]

    Zohar Nussinov; Gerardo Ortiz

    2014-10-22T23:59:59.000Z

    We prove sufficient conditions for Topological Quantum Order at both zero and finite temperatures. The crux of the proof hinges on the existence of low-dimensional Gauge-Like Symmetries (that notably extend and differ from standard local gauge symmetries) and their associated defects, thus providing a unifying framework based on a symmetry principle. These symmetries may be actual invariances of the system, or may emerge in the low-energy sector. Prominent examples of Topological Quantum Order display Gauge-Like Symmetries. New systems exhibiting such symmetries include Hamiltonians depicting orbital-dependent spin exchange and Jahn-Teller effects in transition metal orbital compounds, short-range frustrated Klein spin models, and p+ip superconducting arrays. We analyze the physical consequences of Gauge-Like Symmetries (including topological terms and charges), discuss associated braiding, and show the insufficiency of the energy spectrum, topological entanglement entropy, maximal string correlators, and fractionalization in establishing Topological Quantum Order. General symmetry considerations illustrate that not withstanding spectral gaps, thermal fluctuations may impose restrictions on certain suggested quantum computing schemes and lead to "thermal fragility". Our results allow us to go beyond standard topological field theories and engineer systems with Topological Quantum Order.

  17. Ternary rare-earth ruthenium and iridium germanides RE{sub 3}M{sub 2}Ge{sub 3} (RE=Y, Gd–Tm, Lu; M=Ru, Ir)

    SciTech Connect (OSTI)

    Oliynyk, Anton O.; Stoyko, Stanislav S.; Mar, Arthur, E-mail: arthur.mar@ualberta.ca

    2013-06-15T23:59:59.000Z

    Through arc-melting reactions of the elements and annealing at 800 °C, the ternary rare-earth germanides RE{sub 3}Ru{sub 2}Ge{sub 3} and RE{sub 3}Ir{sub 2}Ge{sub 3} have been prepared for most of the smaller RE components (RE=Y, Gd–Tm, Lu). In the iridium-containing reactions, the new phases RE{sub 2}IrGe{sub 2} were also generally formed as by-products. Powder X-ray diffraction revealed orthorhombic Hf{sub 3}Ni{sub 2}Si{sub 3}-type structures (space group Cmcm, Z=4) for RE{sub 3}M{sub 2}Ge{sub 3} (M=Ru, Ir) and monoclinic Sc{sub 2}CoSi{sub 2}-type structures (space group C2/m, Z=4) for RE{sub 2}IrGe{sub 2}. Full crystal structures were determined by single-crystal X-ray diffraction for all members of RE{sub 3}Ru{sub 2}Ge{sub 3} (a=4.2477(6) Å, b=10.7672(16) Å, c=13.894(2) Å for RE=Y; a=4.2610(3)–4.2045(8) Å, b=10.9103(8)–10.561(2) Å, c=14.0263(10)–13.639(3) Å in the progression of RE from Gd to Lu) and for Tb{sub 3}Ir{sub 2}Ge{sub 3} (a=4.2937(3) Å, b=10.4868(7) Å, c=14.2373(10) Å). Both structures can be described in terms of CrB- and ThCr{sub 2}Si{sub 2}-type slabs built from Ge-centred trigonal prisms. However, band structure calculations on Y{sub 3}Ru{sub 2}Ge{sub 3} support an alternative description for RE{sub 3}M{sub 2}Ge{sub 3} based on [M{sub 2}Ge{sub 3}] layers built from linked MGe{sub 4} tetrahedra, which emphasizes the strong M–Ge covalent bonds present. The temperature dependence of the electrical resistivity of RE{sub 3}Ru{sub 2}Ge{sub 3} generally indicates metallic behaviour but with low-temperature transitions visible for some members (RE=Gd, Tb, Dy) that are probably associated with magnetic ordering of the RE atoms. Anomalously, Y{sub 3}Ru{sub 2}Ge{sub 3} exhibits semiconductor-like behaviour of uncertain origin. Magnetic measurements on Dy{sub 3}Ru{sub 2}Ge{sub 3} reveal antiferromagnetic ordering at 3 K and several unusual field-dependent transitions suggestive of complex spin reorientation processes. - Graphical abstract: RE{sub 3}M{sub 2}Ge{sub 3} (M=Ru, Ir) adopts the Hf{sub 3}Ni{sub 2}Si{sub 3}-type structure containing slabs built up from Ge-centred trigonal prisms. - Highlights: • Crystal structures of RE{sub 3}Ru{sub 2}Ge{sub 3} (RE=Y, Gd–Tm, Lu) and Tb{sub 3}Ir{sub 2}Ge{sub 3} were determined. • Strong M–Ge covalent bonds were confirmed by band structure calculations. • Most RE{sub 3}Ru{sub 2}Ge{sub 3} members except Y{sub 3}Ru{sub 2}Ge{sub 3} exhibit metallic behaviour. • Dy{sub 3}Ru{sub 2}Ge{sub 3} displays unusual field-dependent magnetic transitions.

  18. The influence of a Si cap on self-organized SiGe islands and the underlying wetting layer

    SciTech Connect (OSTI)

    Brehm, M.; Grydlik, M.; Groiss, H.; Hackl, F.; Schaeffler, F.; Fromherz, T.; Bauer, G. [Institut fuer Halbleiter -u. Festkoerperphysik, Universitaet Linz, A-4040 Linz (Austria)

    2011-06-15T23:59:59.000Z

    For the prototypical SiGe/Si(001) Stranski-Krastanow (SK) growth system, the influence of intermixing caused by the deposition of a Si cap layer at temperatures T{sub cap} between 300 deg. C and 700 deg. C is studied both for the SiGe wetting layer (WL) and the SiGe islands. Systematic growth experiments were carried out with an ultrahigh resolution of down to 0.005 monolayers (ML) of deposited Ge. The properties of the samples were investigated via photoluminescence (PL) spectroscopy, atomic force microscopy (AFM), and transmission electron microscopy. We studied in detail the influence of T{sub cap} in the three main coverage regions of SiGe SK growth, which are (i) the WL build-up regime, (ii) the island nucleation regime, where most of the Ge is supplied via material transfer from the WL, and (iii) the saturation regime, where the WL thickness remains initially stable. At T{sub cap} = 300 deg. C, we found that both the WL and the island are essentially preserved in composition and shape, whereas at 500 deg. C the WL becomes heavily alloyed during capping, and at 700 deg. C the islands also become alloyed. At T{sub cap} = 500 deg. C we found enhanced WL intermixing in the presence of dome-shaped islands, whereas at T{sub cap} 700 deg. C the WL properties become dominated by the dissolution of pyramid-shaped islands upon capping. At Ge coverages above {approx_equal}6 ML, we found an unexpected thickening of the WL, almost independently of T{sub cap}. This finding suggests that the density and the volume of the dome-shaped islands have an upper limit, beyond which excess Ge from the external source again becomes incorporated into the WL. Finally, we compared PL spectra with AFM-based evaluations of the integral island volumes in order to determine in a straightforward manner the average composition of the SiGe islands.

  19. Origins of low resistivity and Ge donor level in Ge ion-implanted ZnO bulk single crystals

    SciTech Connect (OSTI)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K. [College of Engineering and Research Center of Ion Beam Technology, Hosei University Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Departments of Arts and Sciences, Osaka Kyoiku University Kashiwara, Osaka 582-8582 (Japan)

    2013-12-04T23:59:59.000Z

    The energy level of Ge in Ge-ion implanted ZnO single crystals is studied by Hall-effect and photoluminescence (PL) methods. The variations in resistivity from ?10{sup 3} ?cm for un-implanted samples to ?10{sup ?2} ?cm for as-implanted ones are observed. The resistivity is further decreased to ?10{sup ?3} ?cm by annealing. The origins of the low resistivity are attributed to both the zinc interstitial (Zn{sub i}) related defects and the electrical activated Ge donor. An activation energy of Ge donors estimated from the temperature dependence of carrier concentration is 102 meV. In PL studies, the new peak at 372 nm (3.33 eV) related to the Ge donor is observed in 1000 °C annealed samples.

  20. GeO{sub 2}/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications

    SciTech Connect (OSTI)

    Bom, N. M., E-mail: nicolau.bom@ufrgs.br [PGMICRO, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Soares, G. V.; Hartmann, S.; Bordin, A. [Instituto de Física, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil); Radtke, C. [Instituto de Química, UFRGS, 91509-900 Porto Alegre, Rio Grande do Sul (Brazil)

    2014-10-06T23:59:59.000Z

    Deuterium (D) incorporation in GeO{sub 2}/Ge structures following D{sub 2} annealing was investigated. Higher D concentrations were obtained for GeO{sub 2}/Ge samples in comparison to their SiO{sub 2}/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D{sub 2} constitute defect sites for D incorporation, analogous to defects at the SiO{sub 2}/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D{sub 2} annealing, especially in the high temperature regime of the present study (>450?°C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/Ge structures with respect to SiO{sub 2}/Si counterparts.

  1. Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen* and D. K. Saldin

    E-Print Network [OSTI]

    Saldin, Dilano

    Atomic geometry of mixed Ge-Si dimers in the initial-stage growth of Ge on Si,,001...2 1 X. Chen quantitatively the geometry of mixed Ge-Si dimers on a single domain Si 001 2 1 surface by azimuthal scanning core-level photoelectron diffraction. By analyzing Ge 3d diffraction patterns from Ge/Si 001 at 0.1 ML

  2. Effect of graphene on photoluminescence properties of graphene/GeSi quantum dot hybrid structures

    SciTech Connect (OSTI)

    Chen, Y. L.; Ma, Y. J.; Wang, W. Q.; Ding, K.; Wu, Q.; Fan, Y. L.; Yang, X. J.; Zhong, Z. Y.; Jiang, Z. M., E-mail: zmjiang@fudan.edu.cn [State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433 (China); Chen, D. D.; Xu, F. [SHU-SolarE R and D Lab, Department of Physics, College of Science, Shanghai University, Shanghai 200444 (China)

    2014-07-14T23:59:59.000Z

    Graphene has been discovered to have two effects on the photoluminescence (PL) properties of graphene/GeSi quantum dot (QD) hybrid structures, which were formed by covering monolayer graphene sheet on the multilayer ordered GeSi QDs sample surfaces. At the excitation of 488?nm laser line, the hybrid structure had a reduced PL intensity, while at the excitation of 325?nm, it had an enhanced PL intensity. The attenuation in PL intensity can be attributed to the transferring of electrons from the conducting band of GeSi QDs to the graphene sheet. The electron transfer mechanism was confirmed by the time resolved PL measurements. For the PL enhancement, a mechanism called surface-plasmon-polariton (SPP) enhanced absorption mechanism is proposed, in which the excitation of SPP in the graphene is suggested. Due to the resonant excitation of SPP by incident light, the absorption of incident light is much enhanced at the surface region, thus leading to more exciton generation and a PL enhancement in the region. The results may be helpful to provide us a way to improve optical properties of low dimensional surface structures.

  3. Conformal Higgs model: Charged gauge fields can produce a 125GeV resonance

    E-Print Network [OSTI]

    R. K. Nesbet

    2014-11-06T23:59:59.000Z

    The Lagrangian density that defines conformal Higgs scalar field $\\Phi$ contains $(w^2-R/6-\\lambda\\Phi^\\dagger\\Phi)\\Phi^\\dagger\\Phi$. The value of $\\lambda$ is shown here to depend on the mass of a field $W_2$ that combines interacting scalars $W^+_\\mu W_-^\\mu$ and $Z^*_\\mu Z^\\mu$. $\\Phi$ is coupled to this state or resonance by the cosmological time dependence of gravitational Ricci scalar $R$, known from fitting the implied Friedmann cosmic evolution equation to Hubble expansion data. If the $W_2$ mass is $125GeV$, $\\lambda$ is negative and of order $10^{-88}$, in agreement with its empirical value determined by well-established cosmological and electroweak data. Hence neutral scalar field $W_2$ is a candidate to explain the recently observed LHC resonance. An earlier derivation, restricted to neutral $Z_{\\mu}$, determined parameter $w^2$ consistent with dark energy density inferred from observed Hubble expansion. The present model predicts that the $125GeV$ state is accompanied by a short-lived resonance at approximately $173GeV$.

  4. SiGe quantum dots for fast hole spin Rabi oscillations

    SciTech Connect (OSTI)

    Ares, N.; Prager, A.; De Franceschi, S. [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France)] [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Katsaros, G. [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France) [SPSMS/LaTEQS, CEA-INAC/UJF-Grenoble 1, 17 Rue des Martyrs, 38054 Grenoble Cedex 9 (France); Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Johannes Kepler University, Institute of Semiconductor and Solid State Physics, Altenbergerstr. 69, 4040 Linz (Austria); Golovach, V. N. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU) and Donostia International Physics Center DIPC, E-20018 San Sebastián (Spain); IKERBASQUE, Basque Foundation for Science, E-48011 Bilbao (Spain); Zhang, J. J. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany)] [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Glazman, L. I. [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States)] [Department of Physics, Yale University, New Haven, Connecticut 06520 (United States); Schmidt, O. G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany) [Institute for Integrative Nanosciences, IFW Dresden, Helmholtzstr. 20, D-01069 Dresden (Germany); Center for Advancing Electronics Dresden, TU Dresden (Germany)

    2013-12-23T23:59:59.000Z

    We report on hole g-factor measurements in three terminal SiGe self-assembled quantum dot devices with a top gate electrode positioned very close to the nanostructure. Measurements of both the perpendicular as well as the parallel g-factor reveal significant changes for a small modulation of the top gate voltage. From the observed modulations, we estimate that, for realistic experimental conditions, hole spins can be electrically manipulated with Rabi frequencies in the order of 100?MHz. This work emphasises the potential of hole-based nano-devices for efficient spin manipulation by means of the g-tensor modulation technique.

  5. Recirculating Beam Breakup Study for the 12 GeV Upgrade at Jefferson Lab

    SciTech Connect (OSTI)

    Ilkyoung Shin, Todd Satogata, Shahid Ahmed, Slawomir Bogacz, Mircea Stirbet, Haipeng Wang, Yan Wang, Byung Yunn, Ryan Bodenstein

    2012-07-01T23:59:59.000Z

    Two new high gradient C100 cryomodules with a total of 16 new cavities were installed at the end of the CEBAF south linac during the 2011 summer shutdown as part of the 12-GeV upgrade project at Jefferson Lab. We surveyed the higher order modes (HOMs) of these cavities in the Jefferson Lab cryomodule test facility and CEBAF tunnel. We then studied recirculating beam breakup (BBU) in November 2011 to evaluate CEBAF low energy performance, measure transport optics, and evaluate BBU thresholds due to these HOMs. This paper discusses the experiment setup, cavity measurements, machine setup, optics measurements, and lower bounds on BBU thresholds by new cryomodules.

  6. Nanosecond switching in GeSe phase change memory films by atomic force microscopy

    SciTech Connect (OSTI)

    Bosse, James L.; Huey, Bryan D., E-mail: bhuey@ims.uconn.edu [Department of Materials Science and Engineering, 97 North Eagleville Road, Unit 3136, Storrs, Connecticut 06269-3136 (United States); Grishin, Ilya; Kolosov, Oleg V. [Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom); Gyu Choi, Yong [Department of Materials Science and Engineering, Korea Aerospace University, Goyang-si, Gyeonggi-do, 412-791 (Korea, Republic of); Cheong, Byung-ki; Lee, Suyoun [Electronic Materials Research Center, Korea Institute of Science and Technology, Seongbuk-gu, Seoul 136-791 (Korea, Republic of)

    2014-02-03T23:59:59.000Z

    Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15?ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

  7. Compressively strained Ge trigate p-MOSFETs

    E-Print Network [OSTI]

    Chern, Winston

    2012-01-01T23:59:59.000Z

    State of the art MOSFET performance is limited by the electronic properties of the material that is being used, silicon (Si). In order to continue performance enhancements, different materials are being studied for the ...

  8. Structural and magnetic properties in the polymorphs of CeRh{sub 0.5}Ge{sub 1.5}

    SciTech Connect (OSTI)

    Kalsi, Deepti; Subbarao, Udumula [New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560064 (India); Rayaprol, Sudhindra [UGC-DAE Consortium for Scientific Research, R-5 Shed, B.A.R.C Campus, Trombay, Mumbai-400085 (India); Peter, Sebastian C., E-mail: sebastiancp@jncasr.ac.in [New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur, Bangalore-560064 (India)

    2014-04-01T23:59:59.000Z

    We investigate the structural and magnetic properties in the polymorphs of a new compound CeRh{sub 0.5}Ge{sub 1.5}. Depending upon the starting materials, and the slightly different synthesis method, we find that CeRh{sub 0.5}Ge{sub 1.5} compound exists in two different space groups. The first compound, ?-CeRh{sub 0.5}Ge{sub 1.5} crystallizes in tetragonal ?-ThSi{sub 2} structure type in space group I4{sub 1}/amd with lattice parameters, a=4.2034(6) Å and c=14.770(3) Å. In this structure, the cerium atoms occupy the position between the Rh/Ge tetrahedral layers. On the other hand, the second compound, namely ?-CeRh{sub 0.5}Ge{sub 1.5} crystallizes in the AlB{sub 2} type hexagonal structure in space group P6/mmm, with lattice parameters, a=4.2615(7) Å and c=4.1813(9) Å. The crystal structure of ?-CeRh{sub 0.5}Ge{sub 1.5} consists of two dimensional Rh/Ge hexagonal units and the cerium atoms are sandwiched between them. Magnetization studies exhibit magnetic ordering, as evident from a sharp peak in the plot of magnetic susceptibility measured as a function of temperature in a fixed magnetic field, in ?-CeRh{sub 0.5}Ge{sub 1.5} and ?-CeRh{sub 0.5}Ge{sub 1.5} at 3.6 K and 12 K, respectively. Structural and magnetic properties of both compounds are presented and discussed here. - Graphical abstract: Two polymorphs of a new compound CeRh{sub 0.5}Ge{sub 1.5} in the ?-ThSi{sub 2} and AlB{sub 2} structure types were synthesized by arc melting. The magnetic measurements of both CeRh{sub 0.5}Ge{sub 1.5} phases suggest spin-glass behavior. - Highlights: • A new compound CeRh{sub 0.5}Ge{sub 1.5} in two difference phases was synthesized by arc melting. • The crystal structure of both compounds was determined from the single crystal XRD. • Isothermal relaxation measurements suggesting spin-glass like anomalies in both phases.

  9. GeV Emission from Collisional Magnetized Gamma Ray Bursts

    E-Print Network [OSTI]

    P. Mészáros; M. J. Rees

    2011-04-26T23:59:59.000Z

    Magnetic fields may play a dominant role in gamma-ray bursts, and recent observations by the Fermi satellite indicate that GeV radiation, when detected, arrives delayed by seconds from the onset of the MeV component. Motivated by this, we discuss a magnetically dominated jet model where both magnetic dissipation and nuclear collisions are important. We show that, for parameters typical of the observed bursts, such a model involving a realistic jet structure can reproduce the general features of the MeV and a separate GeV radiation component, including the time delay between the two. The model also predicts a multi-GeV neutrino component.

  10. Efficient tunable luminescence of SiGe alloy sheet polymers

    SciTech Connect (OSTI)

    Vogg, G.; Meyer, A. J.-P.; Miesner, C.; Brandt, M. S.; Stutzmann, M.

    2001-06-18T23:59:59.000Z

    Crystalline SiGe alloy sheet polymers were topotactically prepared from epitaxially grown calcium germanosilicide Ca(Si{sub 1{minus}x}Ge{sub x}){sub 2} precursor films in the whole composition range. These polygermanosilynes are found to be a well-defined mixture of the known siloxene and polygermyne sheet polymers with the OH groups exclusively bonded to silicon. The optical properties determined by photoluminescence and optical reflection measurements identify the mixed SiGe sheet polymers as direct semiconductors with efficient luminescence tunable in the energy range between 2.4 and 1.3 eV. {copyright} 2001 American Institute of Physics.

  11. Spin-polarized photoemission from SiGe heterostructures

    SciTech Connect (OSTI)

    Ferrari, A.; Bottegoni, F.; Isella, G.; Cecchi, S.; Chrastina, D.; Finazzi, M.; Ciccacci, F. [LNESS-Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2013-12-04T23:59:59.000Z

    We apply the principles of Optical Orientation to measure by Mott polarimetry the spin polarization of electrons photoemitted from different group-IV heterostructures. The maximum measured spin polarization, obtained from a Ge/Si{sub 0.31}Ge{sub 0.69} strained film, undoubtedly exceeds the maximum value of 50% attainable in bulk structures. The explanation we give for this result lies in the enhanced band orbital mixing between light hole and split-off valence bands as a consequence of the compressive strain experienced by the thin Ge layer.

  12. Optical absorption in highly-strained Ge/SiGe quantum wells: the role of ?-to-? scattering

    E-Print Network [OSTI]

    L. Lever; Z. Ikoni?; A. Valavanis; R. W. Kelsall; M. Myronov; D. R. Leadley; Y. Hu; N. Owens; F. Y. Gardes; G. T. Reed

    2013-02-28T23:59:59.000Z

    We report the observation of the quantum-confined Stark effect in Ge/SiGe multiple quantum well heterostructures grown on Si(0.22)Ge(0.78) virtual substrates. The large compressive strain in the Ge quantum well layers caused by the lattice mismatch with the virtual substrate results in a blue shift of the direct absorption edge, as well as a reduction in the \\Gamma-valley scattering lifetime because of strain-induced splittings of the conduction band valleys. We investigate theoretically the \\Gamma-valley carrier lifetimes by evaluating the \\Gamma-to-L and \\Gamma-to-\\Delta{} scattering rates in strained Ge/SiGe semiconductor heterostructures. These scattering rates are used to determine the lifetime broadening of excitonic peaks and the indirect absorption in simulated absorption spectra, which are compared with measured absorption spectra for quantum well structures with systematically-varied dimensions. We find that \\Gamma-to-\\Delta{} scattering is significant in compressively strained Ge quantum wells and that the \\Gamma-valley electron lifetime is less than 50 fs in the highly-strained structures reported here, where \\Gamma-to-\\Delta{} scattering accounted for approximately half of the total scattering rate.

  13. GE Store for Technology is Open for Business | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbell isOklahoma City, USAGE BBQ Center isThe GE

  14. Atomic layer-by-layer oxidation of Ge (100) and (111) surfaces by plasma post oxidation of Al{sub 2}O{sub 3}/Ge structures

    SciTech Connect (OSTI)

    Zhang, Rui [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan) [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan); School of Electronic Science and Engineering, Nanjing University, 22 Hankou Road, Nanjing 210093 (China); Huang, Po-Chin; Lin, Ju-Chin; Takenaka, Mitsuru; Takagi, Shinichi [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)] [School of Engineering, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2013-02-25T23:59:59.000Z

    The ultrathin GeO{sub x}/Ge interfaces formed on Ge (100) and (111) surfaces by applying plasma post oxidation to thin Al{sub 2}O{sub 3}/Ge structures are characterized in detail using X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. It is found that the XPS signals assigned to Ge 1+ and the 2+ states in the GeO{sub x} layers by post plasma oxidation have oscillating behaviors on Ge (100) surfaces in a period of {approx}0.3 nm with an increase in the GeO{sub x} thickness. Additionally, the oscillations of the signals assigned to Ge 1+ and 2+ states show opposite phase to each other. The similar oscillation behaviors are also confirmed on Ge (111) surfaces for Ge 1+ and 3+ states in a period of {approx}0.5 nm. These phenomena can be strongly regarded as an evidence of the atomic layer-by-layer oxidation of GeO{sub x}/Ge interfaces on Ge (100) and (111) surfaces.

  15. Atomic imaging and modeling of H{sub 2}O{sub 2}(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface

    SciTech Connect (OSTI)

    Kaufman-Osborn, Tobin [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Chagarov, Evgueni A. [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093 (United States); Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States)

    2014-05-28T23:59:59.000Z

    Passivation, functionalization, and atomic layer deposition nucleation via H{sub 2}O{sub 2}(g) and trimethylaluminum (TMA) dosing was studied on the clean Ge(100) surface at the atomic level using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). Chemical analysis of the surface was performed using x-ray photoelectron spectroscopy, while the bonding of the precursors to the substrate was modeled with density functional theory (DFT). At room temperature, a saturation dose of H{sub 2}O{sub 2}(g) produces a monolayer of a mixture of –OH or –O species bonded to the surface. STS confirms that H{sub 2}O{sub 2}(g) dosing eliminates half-filled dangling bonds on the clean Ge(100) surface. Saturation of the H{sub 2}O{sub 2}(g) dosed Ge(100) surface with TMA followed by a 200?°C anneal produces an ordered monolayer of thermally stable Ge–O–Al bonds. DFT models and STM simulations provide a consistent model of the bonding configuration of the H{sub 2}O{sub 2}(g) and TMA dosed surfaces. STS verifies the TMA/H{sub 2}O{sub 2}/Ge surface has an unpinned Fermi level with no states in the bandgap demonstrating the ability of a Ge–O–Al monolayer to serve as an ideal template for further high-k deposition.

  16. Investigations of segregation phenomena in highly strained Mn-doped Ge wetting layers and Ge quantum dots embedded in silicon

    SciTech Connect (OSTI)

    Prestat, E., E-mail: eric.prestat@gmail.com; Porret, C.; Favre-Nicolin, V.; Tainoff, D.; Boukhari, M.; Bayle-Guillemaud, P.; Jamet, M.; Barski, A., E-mail: andre.barski@cea.com [INAC, SP2M, CEA and Université Joseph Fourier, 17 rue des Martyrs, 38054 Grenoble (France)

    2014-03-10T23:59:59.000Z

    In this Letter, we investigate manganese diffusion and the formation of Mn precipitates in highly strained, few monolayer thick, Mn-doped Ge wetting layers and nanometric size Ge quantum dot heterostructures embedded in silicon. We show that in this Ge(Mn)/Si system manganese always precipitates and that the size and the position of Mn clusters (precipitates) depend on the growth temperature. At high growth temperature, manganese strongly diffuses from germanium to silicon, whereas decreasing the growth temperature reduces the manganese diffusion. In the germanium quantum dots layers, Mn precipitates are detected, not only in partially relaxed quantum dots but also in fully strained germanium wetting layers between the dots.

  17. Axial SiGe Heteronanowire Tunneling Field-Effect Transistors...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our...

  18. Technology makes reds "pop" in LED displays | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Reveal and Energy Smart consumer brands, and Evolve(tm), GTx(tm), Immersion(tm), Infusion(tm), Lumination(tm), Albeo(tm) and Tetra commercial brands, all trademarks of GE....

  19. Taking on the World's Toughest Problems | GE Global Research

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    direct write2square The GE Store for Technology is Open for Business 2-4-13-v-3d-printing-medical-devices Invention Factory: How Will The World Get Smaller? ...

  20. Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

    SciTech Connect (OSTI)

    Ponath, Patrick [University of Texas at Austin; Fredrickson, Kurt [University of Texas at Austin; Posadas, Agham B. [University of Texas at Austin; Ren, Yuan [University of Texas at Austin; Vasudevan, Rama K [ORNL; Okatan, Mahmut Baris [ORNL; Jesse, Stephen [ORNL; Aoki, Toshihiro [Arizona State University; McCartney, Martha [Arizona State University; Smith, David J [Arizona State University; Kalinin, Sergei V [ORNL; Lai, Keji [University of Texas at Austin; Demkov, Alexander A. [University of Texas at Austin

    2015-01-01T23:59:59.000Z

    The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.