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Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
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1

Solar Control Thin Films Laboratory  

NLE Websites -- All DOE Office Websites (Extended Search)

Sputtering equipment Solar Control Thin Films Laboratory The Solar Control Thin Films lab develops novel thin film coatings, deposition technologies, and device systems for...

2

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45, -45, and...

3

Pages that link to "Gateway:Solar" | Open Energy Information  

Open Energy Info (EERE)

Clean Energy Analysis Low Emission Development Strategies Oil & Gas Smart Grid Solar U.S. OpenLabs Utilities Water Wind Page Actions View source History View New Pages...

4

Solar Thin Power | Open Energy Information  

Open Energy Info (EERE)

Power Jump to: navigation, search Name Solar Thin Power Place New York Sector Solar Product Solar Thin Power was formed to seek out solar projects in North America, Asia and Europe...

5

Thin Film Solar Technologies | Open Energy Information  

Open Energy Info (EERE)

Login | Sign Up Search Page Edit with form History Facebook icon Twitter icon Thin Film Solar Technologies Jump to: navigation, search Name Thin Film Solar Technologies...

6

Thin film solar energy collector  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a substrate of quartz, silicate glass, stainless steel or aluminum-containing ferritic alloy; (2) a solar absorptive layer comprising silver, copper oxide, rhodium/rhodium oxide and 0-15% by weight of platinum; (3) an interlayer comprising silver or silver/platinum; and (4) an optional external anti-reflective coating, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of silver or silver/platinum to obtain an improved conductor-dielectric tandem.

Aykan, Kamran (Monmouth Beach, NJ); Farrauto, Robert J. (Westfield, NJ); Jefferson, Clinton F. (Millburn, NJ); Lanam, Richard D. (Westfield, NJ)

1983-11-22T23:59:59.000Z

7

Photovoltaic Performance and Reliability Database: A Gateway to Experimental Data Monitoring Projects for PV at the Florida Solar Energy Center  

DOE Data Explorer (OSTI)

This site is the gateway to experimental data monitoring projects for photovoltaic (PV) at the Florida Solar Energy Center. The website and the database were designed to facilitate and standardize the processes for archiving, analyzing and accessing data collected from dozens of operational PV systems and test facilities monitored by FSEC's Photovoltaics and Distributed Generation Division. [copied from http://www.fsec.ucf.edu/en/research/photovoltaics/data_monitoring/index.htm

8

Enabling Thin Silicon Solar Cell Technology  

NLE Websites -- All DOE Office Websites (Extended Search)

Enabling Thin Silicon Solar Cell Enabling Thin Silicon Solar Cell Technology Enabling Thin Silicon Solar Cell Technology Print Friday, 21 June 2013 10:49 Generic silicon solar cells showing +45°, -45°, and dendritic crack patterns. The effort to shift U.S. energy reliance from fossil fuels to renewable sources has spurred companies to reduce the cost and increase the reliability of their solar photovoltaics (SPVs). The use of thinner silicon in SPV technologies is being widely adopted because it significantly reduces costs; however, silicon is brittle, and thinner silicon, coupled with other recent trends in SPV technologies (thinner glass, lighter or no metal frames, increased use of certain polymers for encapsulation of the silicon cells), is more susceptible to stress and cracking. When the thin

9

Solar photovoltaic technology: The thin film option  

DOE Green Energy (OSTI)

Photovoltaics (PV) the direct conversion of sunlight to electricity was first discovered by scientists at the Bell Labs in 1954. In the late 1960's and 1970's most of the solar cell technology has been used for space applications to power satellites. The main work horse for the PV technology has been crystalline silicon (Si) solar cells. Over the past 15 years this has led to cost reduction from $35/kWh to about $0.30/kWh at the present time. Demonstrated reliability of 20 years or more has resulted in acceptance by several utilities. However, cost reductions in crystalline Si solar cells have been limited by the cost of wafering of ingots and the attendant loss of material. A number of Si sheet solar cells are also being investigated. In the past decade the emphasis of the research and development effort has been focused on thin film solar cells, which have the potential for generating power at much lower cost of $1-2/Wp. Thin film solar cells that are presently being investigated and are generating global attention are: amorphous silicon (a-Si:H), cadmium telluride (CdTe), and copper indium diselenide (CuInSe/sub 2,/ or CIS). In the past few years, considerable progress has been; made by all three of these thin film solar cells. This paper reviews the current status and future potential of these exiting thin film solar cell technologies.

Ullal, H.S.; Zweibel, K.; Sabisky, E.S.; Surek, T.

1988-01-01T23:59:59.000Z

10

Thin film absorber for a solar collector  

SciTech Connect

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1985-01-01T23:59:59.000Z

11

A survey of thin-film solar photovoltaic industry & technologies  

E-Print Network (OSTI)

A new type of solar cell technology using so-called thin-film solar photovoltaic material has the potential to make a great impact on our lives. Because it uses very little or no silicon at all, thin- film (TF) solar ...

Grama, Sorin

2007-01-01T23:59:59.000Z

12

NERSC Science Gateways  

NLE Websites -- All DOE Office Websites (Extended Search)

Analytics & Visualization Science Gateways Demos Database services OpenDAP User Surveys NERSC Users Group User Announcements Help Home For Users Science Gateways Science...

13

NERSC Science Gateway Development  

NLE Websites -- All DOE Office Websites (Extended Search)

Design Forward Design Forward Home » R & D » Science Gateway Development Science Gateway Development Science gateways are conduits for bringing HPC to the web. NERSC assists in the development and hosting of gateways that make NERSC compute and data resources more broadly useful. To ease the development of these gateways, the NERSC Web Toolkit (NEWT) makes science gateways accessible to anyone familiar with HTML and javascript. You can find more detailed information about science gateway development in the related NERSC user documentation and at the NEWT website. What are some use cases? A science gateway can be tailored to the needs within a team of researchers allowing them to share data, simulation results, and information among users who may be geographically distributed.

14

Category:Gateways | Open Energy Information  

Open Energy Info (EERE)

Network (CLEAN) E Gateway:ECOWAS Clean Energy Gateway G Gateway:Geothermal H Gateway:Hydrogen I Gateway:Incentives and Policies Gateway:International Clean Energy Analysis L...

15

Efficient light trapping structure in thin film silicon solar cells  

E-Print Network (OSTI)

Thin film silicon solar cells are believed to be promising candidates for continuing cost reduction in photovoltaic panels because silicon usage could be greatly reduced. Since silicon is an indirect bandgap semiconductor, ...

Sheng, Xing

16

Recent technological advances in thin film solar cells  

DOE Green Energy (OSTI)

High-efficiency, low-cost thin film solar cells are an exciting photovoltaic technology option for generating cost-effective electricity in 1995 and beyond. This paper reviews the substantial advances made by several thin film solar cell technologies, namely, amorphous silicon, copper indium diselenide, cadmium telluride, and polycrystalline silicon. Recent examples of utility demonstration projects of these emerging materials are also discussed. 8 refs., 4 figs.

Ullal, H.S.; Zwelbel, K.; Surek, T.

1990-03-01T23:59:59.000Z

17

Overview and Challenges of Thin Film Solar Electric Technologies  

DOE Green Energy (OSTI)

In this paper, we report on the significant progress made worldwide by thin-film solar cells, namely, amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS). Thin-film photovoltaic (PV) technology status is also discussed in detail. In addition, R&D and technology challenges in all three areas are elucidated. The worldwide estimated projection for thin-film PV technology production capacity announcements are estimated at more than 5000 MW by 2010.

Ullal, H. S.

2008-12-01T23:59:59.000Z

18

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer  

SciTech Connect

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Carlson, David E. (Yardley, PA)

1980-01-01T23:59:59.000Z

19

Polycrystalline Thin Film Solar Cell Technologies: Preprint  

DOE Green Energy (OSTI)

Rapid progress is being made by CdTe and CIGS-based thin-film PV technologies in entering commercial markets.

Ullal, H. S.

2008-12-01T23:59:59.000Z

20

Polycrystalline Thin-Film Multijunction Solar Cells  

DOE Green Energy (OSTI)

We present a digest of our research on the thin-film material components that comprise the top and bottom cells of three different material systems and the tandem devices constructed from them.

Noufi, R.; Wu, X.; Abu-Shama, J.; Ramanathan, K; Dhere, R.; Zhou, J.; Coutts, T.; Contreras, M.; Gessert, T.; Ward, J. S.

2005-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

The ultra-thin solar cells that could generate power through windows  

E-Print Network (OSTI)

The ultra-thin solar cells that could generate power through windows By Claire Bates Last updated, generating enough electricity to power the GPS or air conditioning. Solar cells, which convert solar energy into tinted windows Page 1 of 3The ultra-thin solar cells that could generate power through windows | Mail

Rogers, John A.

22

Properties of High Efficiency CIGS Thin Film Solar Cells  

DOE Green Energy (OSTI)

We present experimental results in three areas. Solar cells with an efficiency of 19% have been fabricated with an absorber bandgap in the range of 1.1-1.2 eV. Properties of solar cells fabricated with and without an undoped ZnO layer were compared. The data show that high efficiency cells can be fabricated without using the high-resistivity or undoped ZnO layer. Properties of CIGS solar cells were fabricated from thin absorbers (1 {micro}m) deposited by the three-stage process and simultaneous co-deposition of all the elements. In both cases, solar cells with efficiencies of 16%-17% are obtained.

Ramanathan, K.; Keane, J.; Noufi, R.

2005-02-01T23:59:59.000Z

23

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1{times}10{sup {minus}3} ohm-cm. 4 figures.

Ciszek, T.F.

1995-03-28T23:59:59.000Z

24

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A photovoltaic device for converting solar energy into electrical signals comprises a substrate, a layer of photoconductive semiconductor material grown on said substrate, wherein the substrate comprises an alloy of boron and silicon, the boron being present in a range of from 0.1 to 1.3 atomic percent, the alloy having a lattice constant substantially matched to that of the photoconductive semiconductor material and a resistivity of less than 1.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1995-01-01T23:59:59.000Z

25

Gateway | OpenEI  

Open Energy Info (EERE)

Gateway Gateway Dataset Summary Description This dataset comes from the Energy Information Administration (EIA), and is part of the 2011 Annual Energy Outlook Report (AEO2011). This dataset is table 110, and contains only the reference case. The dataset uses gigawatts, billion kilowatthours and quadrillion Btu. The data is broken down into generating capacity, electricity generation and energy consumption. Source EIA Date Released April 26th, 2011 (3 years ago) Date Updated Unknown Keywords 2011 AEO EIA Gateway Reliability First Corporation SERC Reliability Corporation Data application/vnd.ms-excel icon AEO2011:Renewable Energy Generation by Fuel - SERC Reliability Corporation / Gateway- Reference Case (xls, 118.9 KiB) Quality Metrics Level of Review Peer Reviewed

26

Thin-film absorber for a solar collector  

DOE Green Energy (OSTI)

This invention pertains to energy absorbers for solar collectors, and more particularly to high performance thin film absorbers. The solar collectors comprising the absorber of this invention overcome several problems seen in current systems, such as excessive hardware, high cost and unreliability. In the preferred form, the apparatus features a substantially rigid planar frame with a thin film window bonded to one planar side of the frame. An absorber in accordance with the present invention is comprised of two thin film layers that are sealed perimetrically. In a preferred embodiment, thin film layers are formed from a metal/plastic laminate. The layers define a fluid-tight planar envelope of large surface area to volume through which a heat transfer fluid flows. The absorber is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, W.G.

1982-02-09T23:59:59.000Z

27

Thin film solar cell including a spatially modulated intrinsic layer  

SciTech Connect

One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.

Guha, Subhendu (Troy, MI); Yang, Chi-Chung (Troy, MI); Ovshinsky, Stanford R. (Bloomfield Hills, MI)

1989-03-28T23:59:59.000Z

28

Thin film polycrystalline silicon solar cells  

DOE Green Energy (OSTI)

During the present quarter efficiency of heterostructure solar cells has been increased from 13 to 13.7% for single crystal and from 10.3 to 11.2% for polysilicon. For polysilicon the improvements can be attributed to reductions in grid-area coverage and in reflection losses and for single crystal to a combination of reduction in grid-area coverage and increase in fill factor. The heterostructure cells in both cases were IT0/n-Si solar cells. Degradation in Sn0/sub 2//n-Si solar cells can be greatly reduced to negligible proportions by proper encapsulation. The cells used in stability tests have an average initial efficiency of 11% which reduces to a value of about 10.5% after 6 months of exposure to sunlight and ambient conditions. This small degradation occurs within the first month, and the efficiency remains constant subsequently. The reduction in efficiency is due to a decrease in the open-circuit voltage only, while the short-circuit current and fill factor remain constant. The effects of grain-size on the Hall measurements in polysilicon have been analyzed and interpreted, with some modifications, using a model proposed by Bube. This modified model predicts that the measured effective Hall voltage is composed of components originating from the bulk and space-charge region. For materials with large grains, the carrier concentration is independent of the inter-grain boundary barrier, whereas the mobility is dependent on it. However, for small rains, both the carrier density and mobility depend on the barrier. These predictions are consistant with experimental results of mm-size Wacker polysilicon and ..mu..m-size NTD polysilicon.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1980-01-01T23:59:59.000Z

29

Identification, Characterization, and Implications of Shadow Degradation in Thin Film Solar Cells  

E-Print Network (OSTI)

that the SD is a generic reliability concern for all thin film PV technologies, however, in this paper we, USA Abstract-- We describe a comprehensive study of intrinsic reliability issue arising from partial reliability concern for thin film solar cell. Keywords ­ Thin film solar cells, voltage stress, performance

Alam, Muhammad A.

30

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG&E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

31

Polycrystalline thin-film solar cells and modules  

DOE Green Energy (OSTI)

This paper describes the recent technological advances in polycrystalline thin-film solar cells and modules. Three thin film materials, namely, cadmium telluride (CdTe), copper indium diselenide (CuInSe{sub 2}, CIS) and silicon films (Si-films) have made substantial technical progress, both in device and module performance. Early stability results for modules tested outdoors by various groups worldwide are also encouraging. The major global players actively involved in the development of the these technologies are discussed. Technical issues related to these materials are elucidated. Three 20-kW polycrystalline thin-film demonstration photovoltaic (PV) systems are expected to be installed in Davis, CA in 1992 as part of the Photovoltaics for Utility-Scale Applications (PVUSA) project. This is a joint project between the US Department of Energy (DOE), Pacific Gas and Electric (PG E), Electric Power Research Institute (EPRI), California Energy Commission (CEC), and a utility consortium.

Ullal, H.S.; Stone, J.L.; Zweibel, K.; Surek, T.; Mitchell, R.L.

1991-12-01T23:59:59.000Z

32

Amorphous Silicon(a-Si: H) Thin Film Based Omnidirectional Control Solar Powered Vehicle  

Science Conference Proceedings (OSTI)

Through the paper, our goal is to drive a car with the help of thin film based solar cell. Mechanical and Electrical parts are assembled thereby. The main objective of this project is to collect maximum solar energy from the solar spectrum and use that ... Keywords: Thin film Photovoltaic, Single p-i-n Junction, Steering Mechanism, H-Bridge, Gear motor

Abdullah Moinuddin; Md. Jahidul Hoque; Jony C. Sarker; Akhter Zia

2012-03-01T23:59:59.000Z

33

Solar Thin Films Inc formerly American United Global Inc | Open Energy  

Open Energy Info (EERE)

Films Inc formerly American United Global Inc Films Inc formerly American United Global Inc Jump to: navigation, search Name Solar Thin Films Inc (formerly American United Global Inc) Place New York, New York Zip 10038 Sector Solar Product A US-based solar manufacturing equipment supplier. References Solar Thin Films Inc (formerly American United Global Inc)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Thin Films Inc (formerly American United Global Inc) is a company located in New York, New York . References ↑ "Solar Thin Films Inc (formerly American United Global Inc)" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Thin_Films_Inc_formerly_American_United_Global_Inc&oldid=351338

34

High efficiency thin film silicon solar cells with novel light trapping : principle, design and processing  

E-Print Network (OSTI)

One major efficiency limiting factor in thin film solar cells is weak absorption of long wavelength photons due to the limited optical path length imposed by the thin film thickness. This is especially severe in Si because ...

Zeng, Lirong, Ph. D. Massachusetts Institute of Technology

2008-01-01T23:59:59.000Z

35

Tax Credits Give Thin-Film Solar a Big Boost | Department of...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSol will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act...

36

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields; Preprint  

DOE Green Energy (OSTI)

We review the status of commercial polycrystalline thin-film solar cells and photovoltaic (PV) modules, including current and projected commercialization activities.

von Roedern, B.; Ullal, H. S.; Zweibel, K.

2006-05-01T23:59:59.000Z

37

User:GregZiebold/Gateway test | Open Energy Information  

Open Energy Info (EERE)

test test < User:GregZiebold Jump to: navigation, search List of Gateways (by category): {{#ask: [[Category:Gateways]] | format=ul }} América Latina Buildings Clean Energy Economy Coordinated Low Emissions Assistance Network (CLEAN) ECOWAS Clean Energy Gateway Geothermal Hydrogen Incentives and Policies International Clean Energy Analysis Low Emission Development Strategies Old Geothermal Gateway OldGeoGateway Smart Grid Solar U.S. OpenLabs Utilities Water Power Wind List of Gateways (by namespace): {{#ask: [[Gateway:+]]}} América Latina América Latina/Aprender más sobre las ERNC América Latina/Aprender más sobre las ERNC/Construcción y Montaje/Eolica América Latina/Aprender más sobre las ERNC/Estudios de Ingeniería y Selección de Equipos/Biomasa América Latina/Aprender más sobre las ERNC/Estudios de Ingeniería

38

Overview and Challenges of Thin Film Solar Electric Technologies  

NLE Websites -- All DOE Office Websites (Extended Search)

and Challenges of Thin and Challenges of Thin Film Solar Electric Technologies H.S. Ullal Presented at the World Renewable Energy Congress X and Exhibition 2008 Glasgow, Scotland, United Kingdom July 19-25, 2008 Conference Paper NREL/CP-520-43355 December 2008 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (ASE), a contractor of the US Government under Contract No. DE-AC36-08-GO28308. Accordingly, the US Government and ASE retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government. Neither the United States government nor any agency thereof, nor any of their employees, makes any

39

Junction Evolution During Fabrication of CdS/CdTe Thin-film PV Solar Cells (Presentation)  

DOE Green Energy (OSTI)

Discussion of the formation of CdTe thin-film PV junctions and optimization of CdTe thin-film PV solar cells.

Gessert, T. A.

2010-09-01T23:59:59.000Z

40

gateway | OpenEI Community  

Open Energy Info (EERE)

gateway gateway Home Graham7781's picture Submitted by Graham7781(1992) Super contributor 28 March, 2013 - 15:16 OpenEI launches new Water Power Gateway and Community Forum community forum gateway OpenEI Water power OpenEI has launched a new Water Power Gateway, which contains links to critical public data sets, up-to-date information on technologies and events, a community forum to discuss topics of interest, links to major research and industry reports, and more. Water Power Forum Description: Forum for information related to the Water Power Gateway The Water Power Community Forum provides you with a way to engage with other people in the community about the water power topics you care about forum gateway hydro Power Water Syndicate content 429 Throttled (bot load) Error 429 Throttled (bot load)

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

The DECIDE Science Gateway  

Science Conference Proceedings (OSTI)

The motivation of this work fits with the general vision to enable e-health for European citizens, irrespective of their social and financial status and their place of residence. Services to be provided include access to a high-quality early diagnostic ... Keywords: Grid computing, Science gateway, Standard-based development and middleware-independent deploy, e-health service

V. Ardizzone; R. Barbera; A. Calanducci; M. Fargetta; E. Ingr; I. Porro; G. La Rocca; S. Monforte; R. Ricceri; R. Rotondo; D. Scardaci; A. Schenone

2012-12-01T23:59:59.000Z

42

Transparent Conductors and Barrier Layers for Thin Film Solar Cells:  

DOE Green Energy (OSTI)

This report describes the research undertaken to increase the efficiency of thin-film solar cells based on amorphous silicon in the so-called''superstrate structure'' (glass front surface/transparent electrically conductive oxide (TCO)/pin amorphous silicon/metal back electrode). The TCO layer must meet many requirements: high optical transparency in the wavelength region from about 350 to 900 nm, low electrical sheet resistance, stability during handling and deposition of the subsequent layers and during use, a textured (rough) surface to enhance optical absorption of red and near-infrared light, and low-resistance electrical contact to the amorphous silicon p-layer. Fluorine-doped tin oxide has been the TCO used in most commercial superstrate amorphous silicon cells. Fluorine-doped zinc oxide (ZnO:F) was later shown to be even more transparent than fluorine-doped tin oxide, as well as being more resistant to the strongly reducing conditions encountered during the deposition of amorphous silicon. Solar cells based on ZnO:F showed the expected higher currents, but the fill factors were lower than standard cells grown on tin oxide, resulting in no consistent improvement in efficiency. This problem was recently mitigated by using a new proprietary p/buffer layer combination developed at BP Solar.

Gordon, R. G.; Broomhall-Dillard, R.; Liu, X.; Pang, D.; Barton, J.

2001-12-01T23:59:59.000Z

43

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

New GE Plant to Produce Thin Film PV Solar Panels Based on NREL New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology New GE Plant to Produce Thin Film PV Solar Panels Based on NREL Technology April 22, 2011 - 10:17am Addthis Photo courtesy of General Electric Photo courtesy of General Electric Minh Le Minh Le Program Manager, Solar Program Earlier this month, General Electric announced plans to enter the global marketplace for solar photovoltaic (PV) panels in a big way - and to do it, they will be using technology pioneered at the Department of Energy's National Renewable Energy Lab (NREL). The record-breaking Cadmium-Telluride (CdTe) thin film photovoltaic technology GE has chosen for its solar panels was originally developed more than a decade ago by a team of scientists led by NREL's Xuanzhi Wu, and

44

Residential Gateways and Controllers  

Science Conference Proceedings (OSTI)

Energy companies are exploring two-way residential communications to help reduce the cost of providing standard energy-related services, such as itemized billing or demand reduction, as well as to provide nontraditional services, such as diagnostic services and e-mail. This report covers the key to development of these services -- residential gateways and controllers. The report was prepared with both technical and financial energy company managers in mind, for use as a reference tool and strategic plann...

1999-08-31T23:59:59.000Z

45

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

Science Conference Proceedings (OSTI)

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

NONE

1995-01-01T23:59:59.000Z

46

Thin film transistors and solar cells. (Latest citations from the US Patent Bibliographic File with Exemplary Claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 250 citations and includes a subject term index and title list.)

Not Available

1993-11-01T23:59:59.000Z

47

OpenEI Community - gateway  

Open Energy Info (EERE)

http:en.openei.orgcommunitytaxonomyterm2300 en OpenEI launches new Water Power Gateway and Community Forum http:en.openei.orgcommunityblogopenei-launches-new-water-powe...

48

Rapid Deposition Technology Holds the Key for the World's Largest Manufacturer of Thin-Film Solar Modules (Fact Sheet)  

Science Conference Proceedings (OSTI)

First Solar, Inc. has been collaborating with NREL since 1991, advancing its thin-film cadmium telluride solar technology to grow from a startup company to become one of the world's largest manufacturers of solar modules, and the world's largest manufacturer of thin-film solar modules.

Not Available

2013-08-01T23:59:59.000Z

49

Residential energy gateway system in smart grid.  

E-Print Network (OSTI)

??This project discusses about the residential energy gateway in the Smart Grid. A residential energy gateway is a critical component in the Home Energy Management (more)

Thirumurthy, Vinod Govindswamy

2010-01-01T23:59:59.000Z

50

Social networking and scientific gateways  

Science Conference Proceedings (OSTI)

Online social networking has significantly increased in popularity over the past several years, with sites such as Facebook now boasting over 300 million members. Scientific gateways have much to gain by incorporating social networking functionality. ... Keywords: Elgg, Facebook, Ning, scientific gateways, social networking

Roger Curry; Cameron Kiddle; Rob Simmonds

2009-11-01T23:59:59.000Z

51

Integrated photonic structures for light trapping in thin-film Si solar cells  

E-Print Network (OSTI)

We explore the mechanisms for an efficient light trapping structure for thin-film silicon solar cells. The design combines a distributed Bragg reflector (DBR) and periodic gratings. Using photonic band theories and numerical ...

Sheng, Xing

52

Technological assessment of light-trapping technology for thin-film Si solar cell  

E-Print Network (OSTI)

The proposed light trapping technology of Distributed Bragg Reflector (DBR) with Diffraction Grating (DG) and Anti-Reflection Coating (ARC) for thin film Si solar cell was analyzed from the technology, market, and ...

Susantyoko, Rahmat Agung

2009-01-01T23:59:59.000Z

53

Earth abundant materials for high efficiency heterojunction thin film solar cells  

E-Print Network (OSTI)

We investigate earth abundant materials for thin-film solar cells that can meet tens of terawatts level deployment potential. Candidate materials are identified by combinatorial search, large-scale electronic structure ...

Buonassisi, Tonio

54

Border Gateway Protocol - Robustness and Security  

Science Conference Proceedings (OSTI)

Border Gateway Protocol - Robustness and Security. Summary: This project focuses on Robustness, Security, and Scalability ...

2012-05-03T23:59:59.000Z

55

REEGLE - Clean Energy Information Gateway | Open Energy Information  

Open Energy Info (EERE)

REEGLE - Clean Energy Information Gateway REEGLE - Clean Energy Information Gateway (Redirected from Reegle Search Engine for Renewable Energy and Energy Efficiency) Jump to: navigation, search Tool Summary LAUNCH TOOL Name: reegle.info - clean energy information portal Agency/Company /Organization: Renewable Energy and Energy Efficiency Partnership (REEEP) Sector: Climate, Energy Focus Area: Renewable Energy, Biomass, Energy Efficiency, People and Policy, Solar, Wind Phase: Evaluate Options, Prepare a Plan, Develop Finance and Implement Projects Topics: Background analysis, Implementation, Low emission development planning, -LEDS, Policies/deployment programs Resource Type: Dataset, Maps, Publications Website: www.reegle.info/ Web Application Link: www.reegle.info/ RelatedTo: REEEP Toolkits

56

THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te-CdTe HETEROJUNCTIONS (1)  

E-Print Network (OSTI)

195 THE PERFORMANCE OF THIN FILM SOLAR CELLS EMPLOYING PHOTOVOLTAIC Cu22014x Te This paper is a short status report on the continuing development of Cu22014xTe-CdTe thin film solar cells thin film work. The most pressing current need is to determine how to extend cell life, particularly

Paris-Sud XI, Université de

57

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells  

E-Print Network (OSTI)

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells. de Bariloche, Argentina 3 ECN Solar Energy, High Tech Campus, Building 5, 5656 AE Eindhoven energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar

Dunin-Borkowski, Rafal E.

58

Status of Amorphous and Crystalline Thin Film Silicon Solar Cell Activities  

DOE Green Energy (OSTI)

This paper reviews the recent activities and accomplishments of the national Amorphous Silicon Team and a (crystalline) thin-film-Si subteam that was implemented in 2002 to research solar cell devices based on thin crystalline Si based layers. This paper reports the evolution of team organization, the technical highlights from the recent team meetings, and an outlook on commercialization potential.

von Roedern, B.

2003-05-01T23:59:59.000Z

59

U-173: Symantec Web Gateway Multiple Vulnerabilities | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3: Symantec Web Gateway Multiple Vulnerabilities U-173: Symantec Web Gateway Multiple Vulnerabilities May 21, 2012 - 7:00am Addthis PROBLEM: Symantec Web Gateway Multiple...

60

p-Doping limit and donor compensation in CdTe polycrystalline thin film solar cells  

E-Print Network (OSTI)

everything accelerates. ARCO solar produces more than 1 MW PV cells in `80, being the first in the world, the Million Solar Roofs in the US, and many more. Besides these programs, the efficiency of CdTe thin film PV energy source is the photovoltaic (PV) cell, which converts sunlight to electrical current, without any

Bieber, Michael

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Advances in thin-film solar cells for lightweight space photovoltaic power  

SciTech Connect

The present stature and current research directions of photovoltaic arrays as primary power systems for space are reviewed. There have recently been great advances in the technology of thin-film solar cells for terrestrial applications. In a thin-film solar cell the thickness of the active element is only a few microns; transfer of this technology to space arrays could result in ultralow-weight solar arrays with potentially large gains in specific power. Recent advances in thin-film solar cells are reviewed, including polycrystalline copper-indium selenide (CuInSe2) and related I-III-VI2 compounds, polycrystalline cadmium telluride and related II-VI compounds, and amorphous silicon:hydrogen and alloys. The best experimental efficiency on thin-film solar cells to date is 12 percent AMO for CuInSe2. This efficiency is likely to be increased in the next few years. The radiation tolerance of thin-film materials is far greater than that of single-crystal materials. CuInSe2 shows no degradation when exposed to 1 MeV electrons. Experimental evidence also suggests that most of all of the radiation damage on thin-films can be removed by a low temperature anneal. The possibility of thin-film multibandgap cascade solar cells is discussed, including the tradeoffs between monolithic and mechanically stacked cells. The best current efficiency for a cascade is 12.5 percent AMO for an amorphous silicon on CuInSe2 multibandgap combination. Higher efficiencies are expected in the future. For several missions, including solar-electric propulsion, a manned Mars mission, and lunar exploration and manufacturing, thin-film photovolatic arrays may be a mission-enabling technology.

Landis, G.A.; Bailey, S.G.; Flood, D.J.

1989-01-01T23:59:59.000Z

62

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar Cells (Fact Sheet)  

Science Conference Proceedings (OSTI)

Researchers at the National Renewable Energy Laboratory (NREL) are finding new ways to manufacture thin-film solar cells made from copper, indium, gallium, and selenium - called CIGS cells - that are different than conventional CIGS solar cells. Their use of high-temperature glass, designed by SCHOTT AG, allows higher fabrication temperatures, opening the door to new CIGS solar cells employing light-absorbing materials with wide 'bandgaps.'

Not Available

2012-09-01T23:59:59.000Z

63

Tax Credits Give Thin-Film Solar a Big Boost | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost Tax Credits Give Thin-Film Solar a Big Boost October 18, 2010 - 2:00pm Addthis MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé MiaSolé will expand its capacity to make its thin-film solar panels by more than ten times, thanks to two Recovery Act tax credits.| Photo courtesy of MiaSolé Lorelei Laird Writer, Energy Empowers What are the key facts? MiaSolé adding more than ten times its current manufacturing capacity Company expects to double or triple its workforce with expansion Expansion is funded by $101 million in Recovery Act tax credit For MiaSolé, a relative newcomer to the solar energy market, 2010 has been

64

Enhanced Efficiency of Light-Trapping Nanoantenna Arrays for Thin Film Solar Cells  

E-Print Network (OSTI)

We suggest a novel concept of efficient light-trapping structures for thin-film solar cells based on arrays of planar nanoantennas operating far from plasmonic resonances. The operation principle of our structures relies on the excitation of chessboard-like collective modes of the nanoantenna arrays with the field localized between the neighboring metal elements. We demonstrated theoretically substantial enhancement of solar-cell short-circuit current by the designed light-trapping structure in the whole spectrum range of the solar-cell operation compared to conventional structures employing anti-reflecting coating. Our approach provides a general background for a design of different types of efficient broadband light-trapping structures for thin-film solar-cell technologically compatible with large-area thin-film fabrication techniques.

Simovski, Constantin R; Voroshilov, Pavel M; Guzhva, Michael E; Belov, Pavel A; Kivshar, Yuri S

2013-01-01T23:59:59.000Z

65

Thin film transistors and solar cells. (Latest citations from the US Patent bibliographic file with exemplary claims). Published Search  

SciTech Connect

The bibliography contains citations of selected patents concerning the fabrication and application methods of thin film transistors and thin film solar cells. Methods of manufacturing thin film transistors for use in electronic display devices are presented. Techniques for continuously producing durable and reliable thin film solar cells are discussed. (Contains 50-250 citations and includes a subject term index and title list.) (Copyright NERAC, Inc. 1995)

NONE

1996-04-01T23:59:59.000Z

66

Gateway:ECOWAS Clean Energy Gateway | Open Energy Information  

Open Energy Info (EERE)

ECOWAS Clean Energy Gateway ECOWAS Clean Energy Gateway Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo West Africa Organizations, Programs, and Tools Countries (15)

67

Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint  

DOE Green Energy (OSTI)

Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

2012-06-01T23:59:59.000Z

68

Real time intelligent process control system for thin film solar cell manufacturing  

SciTech Connect

This project addresses the problem of lower solar conversion efficiency and waste in the typical solar cell manufacturing process. The work from the proposed development will lead toward developing a system which should be able to increase solar panel conversion efficiency by an additional 12-15% resulting in lower cost panels, increased solar technology adoption, reduced carbon emissions and reduced dependency on foreign oil. All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

69

Polycrystalline Thin Film Photovoltaics: From the Laboratory to Solar Fields (Presentation)  

SciTech Connect

The conclusions of this report are that: (1) many issues how thin-film solar cells work remain unresolved, requiring further fundamental R and D effort; (2) commercial thin-film PV module production reached 29% in 2005 in the US, indicating much more rapid growth than crystalline Si PV; (3) commercial module performance is increasing based on current knowledge, more R and D will lead to further improvement; and (4) stability of thin-film modules is acceptable ({le} 1% per year power loss) if the right manufacturing processes are used for manufacturing.

von Roedern, B.; Ullal, H.; Zweibel, K.

2006-05-01T23:59:59.000Z

70

Novel wide band gap materials for highly efficient thin film tandem solar cells  

SciTech Connect

Tandem solar cells (TSCs), which use two or more materials to absorb sunlight, have achieved power conversion efficiencies of >25% versus 11-20% for commercialized single junction solar cell modules. The key to widespread commercialization of TSCs is to develop the wide-band, top solar cell that is both cheap to fabricate and has a high open-circuit voltage (i.e. >1V). Previous work in TSCs has generally focused on using expensive processing techniques with slow growth rates resulting in costs that are two orders of magnitude too expensive to be used in conventional solar cell modules. The objective of the PLANT PV proposal was to investigate the feasibility of using Ag(In,Ga)Se2 (AIGS) as the wide-bandgap absorber in the top cell of a thin film tandem solar cell (TSC). Despite being studied by very few in the solar community, AIGS solar cells have achieved one of the highest open-circuit voltages within the chalcogenide material family with a Voc of 949mV when grown with an expensive processing technique (i.e. Molecular Beam Epitaxy). PLANT PVâ??s goal in Phase I of the DOE SBIR was to 1) develop the chemistry to grow AIGS thin films via solution processing techniques to reduce costs and 2) fabricate new device architectures with high open-circuit voltage to produce full tandem solar cells in Phase II. PLANT PV attempted to translate solution processing chemistries that were successful in producing >12% efficient Cu(In,Ga)Se2 solar cells by replacing copper compounds with silver. The main thrust of the research was to determine if it was possible to make high quality AIGS thin films using solution processing and to fully characterize the materials properties. PLANT PV developed several different types of silver compounds in an attempt to fabricate high quality thin films from solution. We found that silver compounds that were similar to the copper based system did not result in high quality thin films. PLANT PV was able to deposit AIGS thin films using a mixture of solution and physical vapor deposition processing, but these films lacked the p-type doping levels that are required to make decent solar cells. Over the course of the project PLANT PV was able to fabricate efficient CIGS solar cells (8.7%) but could not achieve equivalent performance using AIGS. During the nine-month grant PLANT PV set up a variety of thin film characterization tools (e.g. drive-level capacitance profiling) at the Molecular Foundry, a Department of Energy User Facility, that are now available to both industrial and academic researchers via the grant process. PLANT PV was also able to develop the back end processing of thin film solar cells at Lawrence Berkeley National Labs to achieve 8.7% efficient CIGS solar cells. This processing development will be applied to other types of thin film PV cells at the Lawrence Berkeley National Labs. While PLANT PV was able to study AIGS film growth and optoelectronic properties we concluded that AIGS produced using these methods would have a limited efficiency and would not be commercially feasible. PLANT PV did not apply for the Phase II of this grant.

Brian E. Hardin, Stephen T. Connor, Craig H. Peters

2012-06-11T23:59:59.000Z

71

Retrieving Properties of Thin Clouds from Solar Aureole Measurements  

Science Conference Proceedings (OSTI)

This paper describes a newly designed Sun and Aureole Measurement (SAM) aureolegraph and the first results obtained with this instrument. SAM measurements of solar aureoles produced by cirrus and cumulus clouds were taken at the Atmospheric ...

J. G. DeVore; A. T. Stair; A. LePage; D. Rall; J. Atkinson; D. Villanucci; S. A. Rappaport; P. C. Joss; R. A. McClatchey

2009-12-01T23:59:59.000Z

72

Amorphous silicon/polycrystalline thin film solar cells  

DOE Patents (OSTI)

An improved photovoltaic solar cell is described including a p-type amorphous silicon layer, intrinsic amorphous silicon, and an n-type polycrystalline semiconductor such as cadmium sulfide, cadmium zinc sulfide, zinc selenide, gallium phosphide, and gallium nitride. The polycrystalline semiconductor has an energy bandgap greater than that of the amorphous silicon. The solar cell can be provided as a single-junction device or a multijunction device.

Ullal, H.S.

1991-03-13T23:59:59.000Z

73

Thin Film Solar Cells with Light Trapping Transparent Conducting Oxide Layer  

E-Print Network (OSTI)

Thin film solar cells, if film thickness is thinner than the optical absorption length, typically give lower cell performance. For the thinner structure, electric current loss due to light penetration can offset the electric current gain obtained from higher built-in electric field. Light trapping schemes can increase the effective optical absorption length and thus enhance the electric current for thinner solar cells. Here a new light trapping scheme based on light trapping transparent conducting oxide layer (LT-TCO) is proposed to enhance the performance of thin film solar cells. Three different configurations of integrating the LT-TCO layer in solar cells are proposed and evaluated. This research aims to develop the LT-TCO layer with surface texture and good conductivity by pulsed laser deposition (PLD) technique at low temperature. The LT-TCO layer is fabricated by PLD deposition of Al-doped ZnO to achieve multilayer films by tuning of oxygen pressure. The light trapping effect is examined by optical transmittance measurement and the surface texture is characterized by transmission electron microscopy (TEM) technique. The conductivity of LT-TCO layer is measured by resistivity measurement. Thin film CdTe/CdS solar cells are fabricated by PLD technique to develop baseline solar cells for integration of LT-TCO layer. The as-deposited thin film solar cells show relatively low performance and are further processed with various post-deposition treatments to seek efficiency enhancement. The effects of different processes on cell performance are examined by electrical, optical, and microstructure studies. Air annealing of CdS layer and CdCl2 treatment of CdTe layer combined are found to yield the best cell performance. The fabrication issues that limit the cell performance are discussed and future optimizations in fabrication processes are suggested.

Lu, Tianlin

2011-05-01T23:59:59.000Z

74

Thin-Film Solar Cell Fabricated on a Flexible Metallic Substrate  

SciTech Connect

A thin-film solar cell (10) is provided. The thin-film solar cell (10) comprises a flexible metallic substrate (12) having a first surface and a second surface. A back metal contact layer (16) is deposited on the first surface of the flexible metallic substrate (12). A semiconductor absorber layer (14) is deposited on the back metal contact. A photoactive film deposited on the semiconductor absorber layer (14) forms a heterojunction structure and a grid contact (24) deposited on the heterjunction structure. The flexible metal substrate (12) can be constructed of either aluminium or stainless steel. Furthermore, a method of constructing a solar cell is provided. The method comprises providing an aluminum substrate (12), depositing a semiconductor absorber layer (14) on the aluminum substrate (12), and insulating the aluminum substrate (12) from the semiconductor absorber layer (14) to inhibit reaction between the aluminum substrate (12) and the semiconductor absorber layer (14).

Tuttle, J. R.; Noufi, R.; Hasoon, F. S.

2006-05-30T23:59:59.000Z

75

Real time intelligent process control system for thin film solar cell manufacturing  

DOE Green Energy (OSTI)

All solar cell manufacturing processes today suffer from manufacturing inefficiencies that currently lead to lower product quality and lower conversion efficiency, increased product cost and greater material and energy consumption. This results in slower solar energy adoption and extends the time solar cells will reach grid parity with traditional energy sources. The thin film solar panel manufacturers struggle on a daily basis with the problem of thin film thickness non-uniformity and other parameters variances over the deposited substrates, which significantly degrade their manufacturing yield and quality. Optical monitoring of the thin films during the process of the film deposition is widely perceived as a necessary step towards resolving the non-uniformity and non-homogeneity problem. In order to enable the development of an optical control system for solar cell manufacturing, a new type of low cost optical sensor is needed, able to acquire local information about the panel under deposition and measure its local characteristics, including the light scattering in very close proximity to the surface of the film. This information cannot be obtained by monitoring from outside the deposition chamber (as traditional monitoring systems do) due to the significant signal attenuation and loss of its scattering component before the reflected beam reaches the detector. In addition, it would be too costly to install traditional external in-situ monitoring systems to perform any real-time monitoring over large solar panels, since it would require significant equipment refurbishing needed for installation of multiple separate ellipsometric systems, and development of customized software to control all of them simultaneously. The proposed optical monitoring system comprises AccuStratas fiber optics sensors installed inside the thin film deposition equipment, a hardware module of different components (beyond the scope of this project) and our software program with iterative predicting capability able to control material bandgap and surface roughness as films are deposited. Our miniature fiber optics monitoring sensors are installed inside the vacuum chamber compartments in very close proximity where the independent layers are deposited (an option patented by us in 2003). The optical monitoring system measures two of the most important parameters of the photovoltaic thin films during deposition on a moving solar panel - material bandgap and surface roughness. In this program each sensor array consists of two fiber optics sensors monitoring two independent areas of the panel under deposition. Based on the monitored parameters and their change in time and from position to position on the panel, the system is able to provide to the equipment operator immediate information about the thin films as they are deposited. This DoE Supply Chain program is considered the first step towards the development of intelligent optical control system capable of dynamically adjusting the manufacturing process on-the-fly in order to achieve better performance. The proposed system will improve the thin film solar cell manufacturing by improving the quality of the individual solar cells and will allow for the manufacturing of more consistent and uniform products resulting in higher solar conversion efficiency and manufacturing yield. It will have a significant impact on the multibillion-dollar thin film solar market. We estimate that the financial impact of these improvements if adopted by only 10% of the industry ($7.7 Billion) would result in about $1.5 Billion in savings by 2015 (at the assumed 20% improvement). This can b

George Atanasoff

2010-10-29T23:59:59.000Z

76

REEGLE - Clean Energy Information Gateway | Open Energy Information  

Open Energy Info (EERE)

REEGLE - Clean Energy Information Gateway REEGLE - Clean Energy Information Gateway Jump to: navigation, search Tool Summary LAUNCH TOOL Name: reegle.info - clean energy information portal Agency/Company /Organization: Renewable Energy and Energy Efficiency Partnership (REEEP) Sector: Climate, Energy Focus Area: Renewable Energy, Biomass, Energy Efficiency, People and Policy, Solar, Wind Phase: Evaluate Options, Prepare a Plan, Develop Finance and Implement Projects Topics: Background analysis, Implementation, Low emission development planning, -LEDS, Policies/deployment programs Resource Type: Dataset, Maps, Publications Website: www.reegle.info/ Web Application Link: www.reegle.info/ RelatedTo: REEEP Toolkits Cost: Free OpenEI Keyword(s): energy data, policy, regulation, open data, LOD, tagging

77

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. (University of South Florida, Tampa, FL (United States))

1992-04-01T23:59:59.000Z

78

Gateway Energy Conference  

Science Conference Proceedings (OSTI)

This book presents the papers given at a conference whose purpose was to provide a forum for the exchange of energy information between leaders in business, industry, labor, government, and education. Topics considered at the conference included the economics of energy, agriculture and changing natural gas prices, the economics of superinsulation in the rehabilitation of historic buildings, energy conservation in small industries, computer systems for power demand control, a solar absorption lumber drying system, selective absorbers for Trombe walls, daylighting, lighting control, portable heaters, unitary heat pumps, the electrochemical oxidation of coal, a slurry fuels development program, coal gasification, coal desulfurization, a waste coal recovery process, coal-fired boilers, surface mining of coal, steam gasification of wood, wood fuel use by households, fusion power, and the economic aspects of nuclear waste disposal.

Sauer, H.J.; Hegler, B.E.

1983-01-01T23:59:59.000Z

79

Pages that link to "Ekarat Solar Company Ltd" | Open Energy Informatio...  

Open Energy Info (EERE)

(previous 50 | next 50) (20 | 50 | 100 | 250 | 500) Gateway:Solar ( links) Thailand ( links) List of Companies in Solar Sector ( links) Bangkok, Thailand...

80

Improved Transparent Conducting Oxides Boost Performance of Thin-Film Solar Cells (Fact Sheet)  

DOE Green Energy (OSTI)

Today?s thin-film solar cells could not function without transparent conducting oxides (TCOs). TCOs act as a window, both protecting the cell and allowing light to pass through to the cell?s active layers. Until recently, TCOs were seen as a necessary, but static, layer of a thin-film photovoltaic (PV) cell. But a group of researchers at the National Renewable Energy Laboratory (NREL) has identified a pathway to producing improved TCO films that demonstrate higher infrared transparency. To do so, they have modified the TCOs in ways that did not seem possible a few years ago.

Not Available

2011-02-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

Science Conference Proceedings (OSTI)

In this program we have been developing a technology for fabricating thin (cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

82

International Clean Energy Analysis Gateway: Assisting Developing...  

NLE Websites -- All DOE Office Websites (Extended Search)

expand the information presented in the portal and assist with outreach and training. openei.orgICEA Expert and International Networks Gateway Design Analysis data, tools, and...

83

Final project report - CRADA with United Solar Technologies and Pacific Northwest Laboratory (PNL-021): Thin film materials for low-cost high performance solar concentrators  

DOE Green Energy (OSTI)

The objectives of this project were as follows: To develop and evaluate promising low-cost dielectric and polymer-protected thin-film reflective metal coatings to be applied to preformed continuously-curved solar reflector panels to enhance their solar reflectance, and to demonstrate protected solar reflective coatings on preformed solar concentrator panels. The opportunity for this project arose from a search by United Solar Technologies (UST) for organizations and facilities capable of applying reflective coatings to large preformed panels. PNL was identified as being uniquely qualified to participate in this collaborative project.

Martin, P.M.; Affinito, J.D.; Gross, M.E.; Bennett, W.D.

1995-03-01T23:59:59.000Z

84

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS  

E-Print Network (OSTI)

22nd European Photovoltaic Solar Energy Conference, Milan, 3-7 September 2007 Cu(InGa)Se2 THIN-FILM SOLAR CELLS: COMPARATIVE LIFE-CYCLE ANALYSIS OF BUFFER LAYERS Vasilis M. Fthenakis and Hyung Chul Kim National Photovoltaic EH&S Research Center Brookhaven National Laboratory Upton, NY 11973, USA ABSTRACT

85

Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009  

DOE Green Energy (OSTI)

Study using photoelectron spectroscopy, inverse photoemission, and X-ray absorption and emission to derive the electronic structure of interfaces in CIGSS and CdTe thin-film solar cells.

Heske, C.

2009-09-01T23:59:59.000Z

86

Low-cost, deterministic quasi-periodic photonic structures for light trapping in thin film silicon solar cells  

E-Print Network (OSTI)

Light trapping has been an important issue for thin film silicon solar cells because of the low absorption coefficient in the near infrared range. In this paper, we present a photonic structure which combines anodic aluminum ...

Sheng, Xing

87

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells  

E-Print Network (OSTI)

Hot-Wire Deposition of Hydrogenated Nanocrystalline SiGe Films for Thin-Film Si Based Solar Cells bandgap absorber in an a-Si/a-SiGe/nc-SiGe(nc- Si) triple-junction solar cell due to its higher optical investigations of nc-SiGe:H thin films made by hot-wire chemical vapor deposition (HWCVD) with a coil

Deng, Xunming

88

Northeast Gateway Natural Gas LNG Imports (Price) From Qatar...  

Gasoline and Diesel Fuel Update (EIA)

Northeast Gateway Natural Gas LNG Imports (Price) From Qatar (Dollars per Thousand Cubic Feet) Northeast Gateway Natural Gas LNG Imports (Price) From Qatar (Dollars per Thousand...

89

U-219: Symantec Web Gateway Input Validation Flaws Lets Remote...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

9: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords U-219: Symantec Web Gateway Input...

90

T-663: Cisco Content Services Gateway ICMP Processing Flaw Lets...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

device. Note: The Cisco Gateway GPRS Support Node (GGSN), the Cisco Mobile Wireless Home Agent (HA), the Cisco Wireless Security Gateway (WSG), the Cisco Broadband Wireless...

91

GPSI: General-Purpose Science Gateway Infrastructure | Argonne...  

NLE Websites -- All DOE Office Websites (Extended Search)

GPSI: General-Purpose Science Gateway Infrastructure GPSI: General-Purpose Science Gateway Infrastructure GPSI is a generic portal infrastructure for building a wide range of...

92

Northeast Gateway, LA Natural Gas Liquefied Natural Gas Imports...  

U.S. Energy Information Administration (EIA) Indexed Site

Gateway, LA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic Feet) Northeast Gateway, LA Natural Gas Liquefied Natural Gas Imports from Egypt (Million Cubic...

93

Amorphous-silicon thin-film heterojunction solar cells  

DOE Green Energy (OSTI)

The investigation of amorphous silicon materials at MTSEC has had two major thrusts: (1) to improve the amorphous material, i.e., obtain a low state density in the gap, improve the carrier collection depth and diminish non-radiative recombinations; and (2) to attempt to understand and improve on the limitations of the junction devices while evaluating the amorphous silicon materials. In the first of these efforts, the investigation has continued to examine the modifications to the a-Si(H) network by alloying silicon with other group IVA elements, either in binary or ternary compositions, and/or by replacing the hydrogenation for defect compensation with a combination of hydrogenation and alkylation or hydrogenation and halogenation. The doped junction layers are being examined in an attempt to determine the limiting characteristics of the junctions in solar cell devices of these amorphous materials. Amorphous alloys of Si-Ge, Si-C, Si-Sn were prepared as well as ternary compositions of Si-Ge-C and Si-Sn-C. In addition, Na vapor was added to the gas feed to deposit a-Si(Na, H) films, and to prepare Si-Sn, fluoride was added along with the tin by vapor additions of SnF/sub 4/ to the gas feed. The optical properties of these materials were measured, and structural and compositional information was obtained from the IR vibrational spectra using the scanning electron microscope and from analyses using scanning Auger microscopy. Electrical measurements have included the dark conductivity and the photo conductivity under room fluorescent light and at AM1 conditions. With alloys that displayed promising photoconductive properties n-i-p devices were prepared to assess the solar cell properties. Details are presented. (WHK)

Cretella, M. C.; Gregory, J. A.; Sandstrom, D. B.; Paul, W.

1981-01-01T23:59:59.000Z

94

Schottky barrier amorphous silicon solar cell with thin doped region adjacent metal Schottky barrier  

DOE Patents (OSTI)

A Schottky barrier amorphous silicon solar cell incorporating a thin highly doped p-type region of hydrogenated amorphous silicon disposed between a Schottky barrier high work function metal and the intrinsic region of hydrogenated amorphous silicon wherein said high work function metal and said thin highly doped p-type region forms a surface barrier junction with the intrinsic amorphous silicon layer. The thickness and concentration of p-type dopants in said p-type region are selected so that said p-type region is fully ionized by the Schottky barrier high work function metal. The thin highly doped p-type region has been found to increase the open circuit voltage and current of the photovoltaic device.

Carlson, David E. (Yardley, PA); Wronski, Christopher R. (Princeton, NJ)

1979-01-01T23:59:59.000Z

95

Atmospheric performance of the special-purpose Solar Energy Research Institute (SERI) thin-airfoil family  

DOE Green Energy (OSTI)

The Solar Energy Research Institute (SERI), in cooperation with SeaWest Energy Group, has completed extensive atmospheric testing of the special-purpose SERI thin-airfoil family during the 1990 wind season. The purpose of this test program was to experimentally verify the predicted performance characteristics of the thin-airfoil family on a geometrically optimized blade, and to compare it to original-equipment blades under atmospheric wind conditions. The tests were run on two identical Micon 65/13 horizontal-axis wind turbines installed side-by-side in a wind farm. The thin-airfoil family 7.96 m blades were installed on one turbine, and AeroStar 7.41 m blades were installed on the other. This paper presents final performance results of the side-by-side comparative field test for both clean and dirty blade conditions. 7 refs., 11 figs., 1 tab.

Tangler, J; Smith, B; Jager, D; Olsen, T

1990-09-01T23:59:59.000Z

96

Processing and modeling issues for thin-film solar cell devices. Final report  

DOE Green Energy (OSTI)

During the third phase of the subcontract, IEC researchers have continued to provide the thin film PV community with greater depth of understanding and insight into a wide variety of issues including: the deposition and characterization of CuIn{sub 1-x}Ga{sub x}Se{sub 2}, a-Si, CdTe, CdS, and TCO thin films; the relationships between film and device properties; and the processing and analysis of thin film PV devices. This has been achieved through the systematic investigation of all aspects of film and device production and through the analysis and quantification of the reaction chemistries involved in thin film deposition. This methodology has led to controlled fabrications of 15% efficient CuIn{sub 1-x}Ga{sub x}Se{sub 2} solar cells over a wide range of Ga compositions, improved process control of the fabrication of 10% efficient a-Si solar cells, and reliable and generally applicable procedures for both contacting and doping films. Additional accomplishments are listed below.

Birkmire, R.W.; Phillips, J.E. [Univ. of Delaware, Newark, DE (United States). Institute of Energy Conversion

1997-11-01T23:59:59.000Z

97

Thin film polycrystalline silicon solar cells. Second technical progress report, July 16, 1980-October 15, 1980  

DOE Green Energy (OSTI)

The objectives of this contract are to fabricate large area thin film silicon solar cells with AM1 efficiency of 10% or greater with good reproducibility and good yield and to assess the feasibility of implementing this process for manufacturing solar cells at a cost of $300/kWe. Efforts have been directed to the purification of metallurgical silicon, the preparation and characterization of substrates and epitaxial silicon layers, and the fabrication and characterization of solar cells. The partial purification of metallurgical silicon by extraction with aqua regia has been further investigated in detail, and the resulting silicon was analyzed by the atomic absorption technique. The unidirectional solidification of aqua regia-extracted metallurgical silicon on graphite was used for the preparation of substrates, and the impurity distribution in the substrate was determined and compared with the impurity content in metallurgical silicon. The effects of heat treatment on the impurity distribution in the substrate and in the epitaxial layer have also been investigated. Large area (30 to 60 cm/sup 2/) solar cells have been prepared from aqua regia-extracted metallurgical silicon substrates by depositing a p-n junction structure using the thermal reduction of trichlorosilane containing appropriate dopants. The AM1 efficiencies are about 9% for cells of 30 to 35 cm/sup 2/ area. Larger area, 60 cm/sup 2/, thin film solar cells have been fabricated for the first time, and their AM1 efficiencies are slightly higher than 8%. The spectral response, minority carrier diffusion length, and I/sub sc/-V/sub oc/ relation in a number of solr cells have been measured.

None

1980-10-01T23:59:59.000Z

98

Thin Film Solar Cells Derived from Sintered Semiconductor Quantum Dots: Cooperative Research and Development Final Report, CRADA number CRD-07-00226  

Science Conference Proceedings (OSTI)

The NREL/Evident team will develop techniques to fabricate thin film solar cells where the absorption layers comprising the solar cells are derived from sintered semiconductor quantum dots.

Ginley, D. S.

2010-07-01T23:59:59.000Z

99

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010  

DOE Green Energy (OSTI)

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Kumar, A.; Ravi, K. V.

2011-06-01T23:59:59.000Z

100

Design, construction and testing of a high-vacuum anneal chamber for in-situ crystallisation of silicon thin-film solar cells.  

E-Print Network (OSTI)

??Thin-film solar cells on glass substrates are likely to have a bright future due to the potentially low costs and the short energy payback times. (more)

Weber, Jrgen Wolfgang

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Functional requirements for component films in a solar thin-film photovoltaic/thermal panel  

SciTech Connect

The functional requirements of the component films of a solar thin-film photovoltaic/thermal panel were considered. Particular emphasis was placed on the new functions, that each layer is required to perform, in addition to their pre-existing functions. The cut-off wavelength of the window layer, required for solar selectivity, can be achieved with charge carrier concentrations typical of photovoltaic devices, and thus does not compromise electrical efficiency. The upper (semiconductor) absorber layer has a sufficiently high thermal conductivity that there is negligible temperature difference across the film, and thus negligible loss in thermal performance. The lower (cermet) absorber layer can be fabricated with a high ceramic content, to maintain high solar selectivity, without significant increase in electrical resistance. A thin layer of molybdenum-based cermet at the top of this layer can provide an Ohmic contact to the upper absorber layer. A layer of aluminium nitride between the metal substrate and the back metal contact can provide electrical isolation to avoid short-circuiting of series-connected cells, while maintaining a thermal path to the metal substrate and heat extraction systems. Potential problems of differential contraction of heated films and substrates were identified, with a recommendation that fabrication processes, which avoid heating, are preferable. (author)

Johnston, David [Power and Energy Research Group, School of Engineering, Northumbria University, Ellison Place, Newcastle upon Tyne NE1 8ST (United Kingdom)

2010-03-15T23:59:59.000Z

102

Solid State Lighting: GATEWAY and CALiPER  

NLE Websites -- All DOE Office Websites (Extended Search)

Marc Ledbetter Marc Ledbetter Pacific Northwest National Laboratory Marc.Ledbetter@pnnl.gov 503.417.7557 April 3, 2013 Solid State Lighting: GATEWAY & CALiPER Solid State Lighting: GATEWAY & CALiPER 2 | Building Technologies Office eere.energy.gov GATEWAY Problem Statement GATEWAY includes Muni Consortium Multi-Year Market Development Support Plan * IDs 5 key market barriers. Most relevant to GATEWAY are: - Lack of information for buyers and lighting professionals - High transaction costs

103

Solid State Lighting: GATEWAY and CALiPER  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Marc Ledbetter Marc Ledbetter Pacific Northwest National Laboratory Marc.Ledbetter@pnnl.gov 503.417.7557 April 3, 2013 Solid State Lighting: GATEWAY & CALiPER Solid State Lighting: GATEWAY & CALiPER 2 | Building Technologies Office eere.energy.gov GATEWAY Problem Statement GATEWAY includes Muni Consortium Multi-Year Market Development Support Plan * IDs 5 key market barriers. Most relevant to GATEWAY are: - Lack of information for buyers and lighting professionals - High transaction costs

104

MIS solar cells on thin polycrystalline silicon. Progress report No. 3, September 1-November 30, 1980  

DOE Green Energy (OSTI)

The first task of this project involves electron-beam deposition of thin silicon films on low cost substrates. The goal is to obtain 20 ..mu..m thick films having 20 ..mu..m diameter crystallites which may be recrystallized to > 40 ..mu..m. Material characterization and device studies are to be included in efforts to reach a 6% conversion efficiency. The second task deals with MIS solar cell fabrication on various types of silicon including poly-Si, ribbon-Si, silicon on ceramic, and thin film silicon. Conduction mechanism studies, optimum engineering design, and modification of the fabrication process are to be used to achieve 13% efficiency on Xtal-Si and 11% efficiency on poly-Si. The third task involves more detailed test procedures and includes spectral response, interface and grain boundary effects, computer analysis, materials studies, and grain boundary passivation. Progress is detailed. (WHK)

Anderson, W.A.

1980-12-01T23:59:59.000Z

105

CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments  

Office of Scientific and Technical Information (OSTI)

National Renewable Energy Laboratory National Renewable Energy Laboratory Innovation for Our Energy Future A national laboratory of the U.S. Department of Energy Office of Energy Efficiency & Renewable Energy NREL is operated by Midwest Research Institute ● Battelle Contract No. DE-AC36-99-GO10337 Conference Paper NREL/CP-520-37020 January 2005 CIGS Thin-Film Solar Cell Research at NREL: FY04 Results and Accomplishments K. Ramanathan, R.N. Bhattacharya, M.A. Contreras, F.S. Hasoon, J. Abushama, and R. Noufi Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting October 25-28, 2004 Denver, Colorado NOTICE The submitted manuscript has been offered by an employee of the Midwest Research Institute (MRI), a contractor of the US Government under Contract No. DE-AC36-99GO10337. Accordingly, the US

106

Role of Amorphous Silicon and Tunneling in Heterojunction with Intrinsic Thin Layer (HIT) Solar Cells  

Science Conference Proceedings (OSTI)

This work analyzes heterojunction with intrinsic thin layer (HIT) solar cells using numerical simulations. The differences between the device physics of cells with p- and n-type crystalline silicon (c-Si) wafers are substantial. HIT solar cells with n-type wafers essentially form a n/p/n structure, where tunneling across the junction heterointerfaces is a critical transport mechanism required to attain performance exceeding 20%. For HIT cells with p-type wafers, only tunneling at the back-contact barrier may be important. For p-wafer cells, the hydrogenated amorphous silicon (a-Si:H) between the indium tin oxide (ITO) and crystalline silicon may act as a passivating buffer layer but, otherwise, does not significantly contribute to device performance. For n-wafer cells, the carrier concentration and band alignment of this a-Si:H layer are critical to device performance.

Kanevce, A.; Metzger, W. K.

2009-05-01T23:59:59.000Z

107

Non-Uniformities in Thin-Film Cadmium Telluride Solar Cells Using Electroluminescence and Photoluminescence: Preprint  

DOE Green Energy (OSTI)

It is the purpose of this research to develop specific imaging techniques that have the potential to be fast, in-line tools for quality control in thin-film CdTe solar cells. Electroluminescence (EL) and photoluminescence (PL) are two techniques that are currently under investigation on CdTe small area devices made at Colorado State University. It is our hope to significantly advance the understanding of EL and PL measurements as applied to CdTe. Qualitative analysis of defects and non-uniformities is underway on CdTe using EL, PL, and other imaging techniques.

Zaunbrecher, K.; Johnston, S.; Yan, F.; Sites, J.

2011-07-01T23:59:59.000Z

108

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers  

DOE Green Energy (OSTI)

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Antoniadis, H.

2011-03-01T23:59:59.000Z

109

CIGSS Thin Film Solar Cells: Final Subcontract Report, 10 October 2001-30 June 2005  

DOE Green Energy (OSTI)

This report describes the I-III-VI2 compounds that are developing into a promising material to meet the energy requirement of the world. CuInSe2 (CIS) and its alloy with Ga and S have shown long-term stability and highest conversion efficiency of 19.5%. Among the various ways of preparing CuIn1-xGaxSe2-ySy (CIGSS)/CdS thin-film solar cells, co-evaporation and sputtering techniques are the most promising. Sputtering is an established process for very high-throughput manufacturing. ARCO Solar, now Shell Solar, pioneered the work in CIS using the sputtering technique. The two-stage process developed by ARCO Solar involved sputtering of a copper and indium layer on molybdenum-coated glass as the first step. In the second step, the copper-indium layers were exposed to a selenium-bearing gas such as hydrogen selenide (H2Se) mixed with argon. The hydrogen selenide breaks down and leaves selenium, which reacts and mixes with the copper and indium in such a way to produce very high-quality CIS absorber layer. Sputtering technology has the added advantage of being easily scaled up and promotes roll-to-roll production on flexible substrates. Preliminary experiments were carried out. ZnO/ZnO:Al deposition by RF magnetron sputtering and CdS deposition by chemical-bath deposition are being carried out on a routine basis.

Dhere, N. G.

2006-02-01T23:59:59.000Z

110

Advanced processing technology for high-efficiency, thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 March 1993--28 February 1994  

Science Conference Proceedings (OSTI)

This annual report details activities in research on advanced processing technology for high-effiency, thin-film solar cells.

Morel, D.L.; Ferekides, C.S. [University of South Florida, Tampa, FL (United States)

1994-07-01T23:59:59.000Z

111

Development of Commercial Technology for Thin Film Silicon Solar Cells on Glass: Cooperative Research and Development Final Report, CRADA Number CRD-07-209  

DOE Green Energy (OSTI)

NREL has conducted basic research relating to high efficiency, low cost, thin film silicon solar cell design and the method of making solar cells. Two patents have been issued to NREL in the above field. In addition, specific process and metrology tools have been developed by NREL. Applied Optical Sciences Corp. (AOS) has expertise in the manufacture of solar cells and has developed its own unique concentrator technology. AOS wants to complement its solar cell expertise and its concentrator technology by manufacturing flat panel thin film silicon solar cell panels. AOS wants to take NREL's research to the next level, using it to develop commercially viable flat pane, thin film silicon solar cell panels. Such a development in equipment, process, and metrology will likely produce the lowest cost solar cell technology for both commercial and residential use. NREL's fundamental research capability and AOS's technology and industrial background are complementary to achieve this product development.

Sopori, B.

2013-03-01T23:59:59.000Z

112

T-566: Citrix Secure Gateway Unspecified Vulnerability | Department of  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6: Citrix Secure Gateway Unspecified Vulnerability 6: Citrix Secure Gateway Unspecified Vulnerability T-566: Citrix Secure Gateway Unspecified Vulnerability February 28, 2011 - 11:22pm Addthis PROBLEM: Citrix Secure Gateway Unspecified Vulnerability. PLATFORM: Citrix Secure Gateway version 3.1.4 ABSTRACT: A vulnerability has been reported in Citrix Secure Gateway, which can be exploited by malicious people to compromise a vulnerable system. reference LINKS: Citrix ID:CTX128168 Secunia Advisory SA43497 Citrix Support IMPACT ASSESSMENT: High Discussion: This vulnerability only affects Secure Gateway version 3.1.4. Secure Gateway version 3.2.0 is not affected by this vulnerability, but Citrix recommends that customers currently using this version upgrade their deployments to version 3.2.1 in line with the guidance provided in

113

Dark Current Transients in Thin-Film CdTe Solar Cells: Preprint  

DOE Green Energy (OSTI)

This conference paper describes the Dark current transients measured by changing the voltage bias in a stepwise fashion on CdTe cells results in minutes-long transients after each step. Transients measured at room temperature are controlled by carrier trapping that corresponds to the well known voltage transient phenomena[1]. Transients measured on the same CdTe cell at elevated temperature (60C and 90C) show a much slower decay process. We associate this physical process with''shunt'' current paths induced with reverse bias and removed with forward bias. A different back contact process may produce an opposite voltage dependence. The lack of these transients may be required for the fabrication of ''stable'' thin-film CdTe solar cells.

McMahon, T. J.

2002-05-01T23:59:59.000Z

114

CdS/CdTe Thin-Film Solar Cell with a Zinc Stannate Buffer Layer  

DOE Green Energy (OSTI)

This paper describes an improved CdS/CdTe polycrystalline thin-film solar-cell device structure that integrates a zinc stannate (Zn2SnO4 or ZTO) buffer layer between the transparent conductive oxide (TCO) layer and the CdS window layer. Zinc stannate films have a high bandgap, high transmittance, low absorptance, and low surface roughness. In addition, these films are chemically stable and exhibit higher resistivities that are roughly matched to that of the CdS window layer in the device structure. Preliminary device results have demonstrated that by integrating a ZTO buffer layer in both SnO2-based and Cd2SnO4 (CTO)-based CdS/CdTe devices, performance and reproducibility can be significantly enhanced

Wu, X.; Sheldon, P.; Mahathongdy, Y.; Ribelin, R.; Mason, A.; Moutinho, H. R.; Coutts, T. J.

1998-10-28T23:59:59.000Z

115

Research on polycrystalline thin-film CuGaInSe[sub 2] solar cells  

DOE Green Energy (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe[sub 2] (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm[sup 2]-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd[sub 0.82]Zn[sub 0.18]S/CuIn[sub 0.80]Ga[sub 0.20]Se[sub 2] cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V[sub oc] = 0.581 V, J[sub sc] = 34.8 mA/cm[sup 2], FF = 0.728, and a cell area of 0.979 cm[sup 2].

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. (Boeing Co., Seattle, WA (United States). Defense and Space Systems Group)

1992-11-01T23:59:59.000Z

116

ARM-UAV Mission Gateway System  

NLE Websites -- All DOE Office Websites (Extended Search)

ARM-UAV Mission Gateway System ARM-UAV Mission Gateway System S. T. Moore and S. Bottone Mission Research Corporation Santa Barbara, California Introduction The Atmospheric Radiation Measurement-unmanned aerospace vehicle (ARM-UAV) Mission Gateway System (MGS) is a new field support system for the recently reconfigured ARM-UAV payload. The MGS is responsible for the following critical tasks: * Provides an interface for command and control of the ARM-UAV payload during a flight. * Receives and displays mid-flight state of health information, to help ensure the integrity and safety of the payload. * Receives and displays data snapshots, averaged data, or sub-sampled data. * Provides a user configurable, moving map display to enable the Mission Controller and the science

117

SimpleGrid toolkit: Enabling geosciences gateways to cyberinfrastructure  

Science Conference Proceedings (OSTI)

Cyberinfrastructure science and engineering gateways have become an important modality to connect science and engineering communities and cyberinfrastructure. The use of cyberinfrastructure through gateways is fundamental to the advancement of science ... Keywords: Component-based software engineering, Cyberinfrastructure, Grid computing, Science and engineering gateways, Service-oriented architecture, Spatial interpolation

Shaowen Wang; Yan Liu; Nancy Wilkins-Diehr; Stuart Martin

2009-12-01T23:59:59.000Z

118

Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.

Mickelsen, R.A.; Chen, W.S.

1985-08-13T23:59:59.000Z

119

Methods for forming thin-film heterojunction solar cells from I-III-VI[sub 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (1) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI[sub 2] chalcopyrite ternary materials which is vacuum deposited in a thin composition-graded'' layer ranging from on the order of about 2.5 microns to about 5.0 microns ([approx equal]2.5[mu]m to [approx equal]5.0[mu]m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (2), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, is allowed.

Mickelsen, R.A.; Chen, W.S.

1982-06-15T23:59:59.000Z

120

Copper and Transparent-Conductor Reflectarray Elements on Thin-Film Solar Cell Panels  

E-Print Network (OSTI)

This work addresses the integration of reflectarray antennas (RA) on thin film Solar Cell (SC) panels, as a mean to save real estate, weight, or cost in platforms such as satellites or transportable autonomous antenna systems. Our goal is to design a good RA unit cell in terms of phase response and bandwidth, while simultaneously achieving high optical transparency and low microwave loss, to preserve good SC and RA energy efficiencies, respectively. Since there is a trade-off between the optical transparency and microwave surface conductivity of a conductor, here both standard copper and transparent conductors are considered. The results obtained at the unit cell level demonstrates the feasibility of integrating RA on a thin-film SC, preserving for the first time good performance in terms of both SC and RA efficiency. For instance, measurement at X-band demonstrate families of cells providing a phase range larger than 270{\\deg} with average microwave loss of -2.45dB (resp. -0.25dB) and average optical transpa...

Dreyer, Philippe; Nicolay, Sylvain; Ballif, Christophe; Perruisseau-Carrier, Julien

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order ot about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

122

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2  

DOE Patents (OSTI)

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5.mu.m to .congruent.5.0.mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in The Government has rights in this invention pursuant to Contract No. EG-77-C-01-4042, Subcontract No. XJ-9-8021-1 awarded by the U.S. Department of Energy.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1982-01-01T23:59:59.000Z

123

Oil and Gas Gateway | Open Energy Information  

Open Energy Info (EERE)

Oil and Gas Gateway Oil and Gas Gateway Jump to: navigation, search Oil and Gas Companies The oil and gas industry is the largest energy industry in the world, with companies spanning the globe. The map below depicts the top oil companies. Anyone can add another company to this list. Add a new Oil and Gas Company Loading map... {"format":"googlemaps3","type":"ROADMAP","types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"limit":500,"offset":0,"link":"all","sort":[""],"order":[],"headers":"show","mainlabel":"","intro":"","outro":"","searchlabel":"\u2026

124

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges  

Science Conference Proceedings (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se{sub 2} (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. These two thin-film technologies have a common device/module structure: substrate, base electrode, absorber, junction layer, top electrode, patterning steps for monolithic integration, and encapsulation. The monolithic integration of thin-film solar cells can lead to significant manufacturing cost reduction compared to crystalline Si technology. The CdTe and CIGS modules share common structural elements. In principle, this commonality should lead to similar manufacturing cost per unit area, and thus, the module efficiency becomes the discriminating factor that determines the cost per watt. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-01-01T23:59:59.000Z

125

OpenEI/PageKeyword solar home heating | Open Energy Information  

Open Energy Info (EERE)

to: navigation, search A list of all pages that have property "OpenEIPageKeyword" with value "solar home heating" Gateway:Solar + Property: OpenEIPageKeyword Value: solar home...

126

OpenEI/PageKeyword home solar panels | Open Energy Information  

Open Energy Info (EERE)

to: navigation, search A list of all pages that have property "OpenEIPageKeyword" with value "home solar panels" Gateway:Solar + Property: OpenEIPageKeyword Value: home solar...

127

OpenEI/PageKeyword home solar power | Open Energy Information  

Open Energy Info (EERE)

to: navigation, search A list of all pages that have property "OpenEIPageKeyword" with value "home solar power" Gateway:Solar + Property: OpenEIPageKeyword Value: home solar...

128

Wind Energy Data and Information Gateway (WENDI) | Open Energy Information  

Open Energy Info (EERE)

Wind Energy Data and Information Gateway (WENDI) Wind Energy Data and Information Gateway (WENDI) Jump to: navigation, search Tool Summary LAUNCH TOOL Name: Wind Energy Data and Information Gateway (WENDI) Agency/Company /Organization: United States Department of Energy, Oak Ridge National Laboratory Sector: Energy Focus Area: Wind Topics: Market analysis, Resource assessment, Technology characterizations Resource Type: Dataset, Maps Website: windenergy.ornl.gov/ References: Wind Energy Data and Information Gateway (WENDI)[1] Logo: Wind Energy Data and Information Gateway (WENDI) The WENDI Gateway is an integrated system for the archival, discovery, access, integration, and delivery of wind energy-related data and information. NOTE The WENDI Gateway has been discontinued due to an absence of funding. Oak

129

Indium phosphide/cadmium sulfide thin-film solar cells. Semiannual report, July 1980-December 1980  

DOE Green Energy (OSTI)

InP thin films were deposited by planar reactive deposition on recyrstallized CdS (RXCdS) and semi-insulating (100) InP substrates and evaluated as potential layers for an all-thin-film solar cell. Films prepared on RXCdS at approximately 330/sup 0/C contained a mixture of grains having both large and submicron lateral dimensions. SIMS analysis showed the interdiffusion profiles to be well behaved and, within the resolution of the analysis, no significant difference in the profiles between structures prepared at 330/sup 0/C and 380/sup 0/C. Be-doped epitaxial films, deposited on semi-insulating InP at 330/sup 0/C, showed both n- and p-type behavior. Films prepared at higher and lower temperatures with a freshly Be-charged In source were p-type and n-type, respectively; the n-type behavior is associated with an excess of n-type native defects. SIMS analyses confirmed the presence of Be in all Be-doped films. Growth with deviation from stoichiometry was initiated at 330/sup 0/C to reduce the concentration of native defects. Growth of Be-doped films at higher substrate temperature with the same Be-doped source after several runs eventually resulted in n-type films. Analyses of the In source and films were initiated to determine the cause of the transient doping. As an alternative to Be doping, p-type Zn-doped InP films were prepared on InP semi-insulating substrates with room-temperature carrier concentration and mobilities of 6 x 10/sup 16/ cm/sup -3/, and 80 cm/sup 2//Vsec, respectively.

Zanio, K.

1981-03-01T23:59:59.000Z

130

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1993--January 15, 1994  

DOE Green Energy (OSTI)

The overall objective of the research presented in this report is to advance the development and acceptance of thin-film photovoltaic modules by increasing the understanding of film growth and processing and its relationship to materials properties and solar cell performance. The specific means toward meeting this larger goal include: (1) investigating scalable, cost-effective deposition processes; (2) preparing thin-film materials and device layers and completed cell structures; (3) performing detailed material and device analysis; and (4) participating in collaborative research efforts that address the needs of PV-manufacturers. These objectives are being pursued with CuInSe{sub 2}, CdTe and a-Si based solar cells.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N.; Yokimcus, T.A. [Institute of Energy Conversion, Newark, DE (United States)

1994-09-01T23:59:59.000Z

131

Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance  

Science Conference Proceedings (OSTI)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta2O5 film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta2O5 films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta2O5 interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta2O5 interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

Lemmon, John P.; Polikarpov, Evgueni; Bennett, Wendy D.; Kovarik, Libor

2012-05-05T23:59:59.000Z

132

Damp-Heat Induced Degradation of Transparent Conducting Oxides for Thin-Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

The stability of intrinsic and Al-doped single- and bi-layer ZnO for thin-film CuInGaSe2 solar cells, along with Al-doped Zn1-xMgxO alloy and Sn-doped In2O3 (ITO) and F-doped SnO2, was evaluated by direct exposure to damp heat (DH) at 85oC and 85% relative humidity. The results show that the DH-induced degradation rates followed the order of Al-doped ZnO and Zn1-xMgxO >> ITO > F:SnO2. The degradation rates of Al:ZnO were slower for films of higher thickness, higher substrate temperature in sputter-deposition, and with dry-out intervals. As inferred from the optical micro-imaging showing the initiation and propagation of degrading patterns and regions, the degradation behavior appears similar for all TCOs, despite the obvious difference in the degradation rate. A degradation mechanism is proposed to explain the temporal process involving thermal hydrolysis.

Pern, F. J.; Noufi, R.; Li, X.; DeHart, C.; To, B.

2008-05-01T23:59:59.000Z

133

Technology Development for High-Efficiency Solar Cells and Modules Using Thin (<80 um) Single-Crystal Silicon Wafers Produced by Epitaxy: June 11, 2011 - April 30, 2013  

DOE Green Energy (OSTI)

Final technical progress report of Crystal Solar subcontract NEU-31-40054-01. The objective of this 18-month program was to demonstrate the viability of high-efficiency thin (less than 80 um) monocrystalline silicon (Si) solar cells and modules with a low-cost epitaxial growth process.

Ravi, T. S.

2013-05-01T23:59:59.000Z

134

Global Science Gateway Agreement Signed in London | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Science Gateway Agreement Signed in London Science Gateway Agreement Signed in London Global Science Gateway Agreement Signed in London January 22, 2006 - 10:15am Addthis DOE Partners With British Library on "Science.world" Initiative LONDON, ENGLAND -- Dr. Raymond L. Orbach, Under Secretary for Science of the U.S. Department of Energy (DOE), yesterday signed an agreement with Lynne Brindley, Chief Executive, the British Library, to partner on the development of a global science gateway. The gateway would eventually make science information resources of many nations accessible via a single Internet portal. "It is timely to make the science offerings of all nations searchable through one global gateway," Dr. Orbach said. "Science is international, and centralizing access will enhance the rate of scientific discovery. It

135

Neutron Science TeraGrid Gateway  

Science Conference Proceedings (OSTI)

The unique contributions of the Neutron Science TeraGrid Gateway (NSTG) are the connection of national user facility instrument data sources to the integrated cyberinfrastructure of the National Science FoundationTeraGrid and the development of a neutron science gateway that allows neutron scientists to use TeraGrid resources to analyze their data, including comparison of experiment with simulation. The NSTG is working in close collaboration with the Spallation Neutron Source (SNS) at Oak Ridge as their principal facility partner. The SNS is a next-generation neutron source. It has completed construction at a cost of $1.4 billion and is ramping up operations. The SNS will provide an order of magnitude greater flux than any previous facility in the world and will be available to all of the nation's scientists, independent of funding source, on a peer-reviewed merit basis. With this new capability, the neutron science community is facing orders of magnitude larger data sets and is at a critical point for data analysis and simulation. There is a recognized need for new ways to manage and analyze data to optimize both beam time and scientific output. The TeraGrid is providing new capabilities in the gateway for simulations using McStas and a fitting service on distributed TeraGrid resources to improved turnaround. NSTG staff are also exploring replicating experimental data in archival storage. As part of the SNS partnership, the NSTG provides access to gateway support, cyberinfrastructure outreach, community development, and user support for the neutron science community. This community includes not only SNS staff and users but extends to all the major worldwide neutron scattering centers.

Lynch, Vickie E [ORNL; Chen, Meili [ORNL; Cobb, John W [ORNL; Kohl, James Arthur [ORNL; Miller, Stephen D [ORNL; Speirs, David A [ORNL; Vazhkudai, Sudharshan S [ORNL

2010-01-01T23:59:59.000Z

136

Gateway:Low Emission Development Strategies | Open Energy Information  

Open Energy Info (EERE)

icon Gateway:Low Emission Development Strategies (Redirected from Developing LED Scenarios) Jump to: navigation, search Leds-Graphics 03.PNG Low Emission Development...

137

Gateway:International/Global News | Open Energy Information  

Open Energy Info (EERE)

InternationalGlobal News Jump to: navigation, search Africen Energy Policy Research Network (AFREPREN) - Energy News Retrieved from "http:en.openei.orgwindex.php?titleGateway...

138

Solid-State Lighting: Solid-State Lighting GATEWAY Demonstrations  

NLE Websites -- All DOE Office Websites (Extended Search)

download the following reports: Smithsonian American Art Museum J. Paul Getty Museum Jordan Schnitzer Museum of Art Field Museum of Natural History DOE GATEWAY demonstrations...

139

Processing and modeling issues for thin-film solar cell devices: Annual subcontract report, January 16, 1995 -- January 15, 1996  

DOE Green Energy (OSTI)

The overall mission of the Institute of Energy Conversion is the development of thin film photovoltaic cells, modules, and related manufacturing technology and the education of students and professionals in photovoltaic technology. The objectives of this four-year NREL subcontract are to advance the state of the art and the acceptance of thin film PV modules in the areas of improved technology for thin film deposition, device fabrication, and material and device characterization and modeling, relating to solar cells based on CuInSe{sub 2} and its alloys, on a-Si and its alloys, and on CdTe. In the area of CuInSe{sub 2} and its alloys, EEC researchers have produced CuIn{sub 1-x}GaxSe{sub 2} films by selenization of elemental and alloyed films with H{sub 2}Se and Se vapor and by a wide variety of process variations employing co-evaporation of the elements. Careful design, execution and analysis of these experiments has led to an improved understanding of the reaction chemistry involved, including estimations of the reaction rate constants. Investigation of device fabrication has also included studies of the processing of the Mo, US and ZnO deposition parameters and their influence on device properties. An indication of the success of these procedures was the fabrication of a 15% efficiency CuIn{sub 1-x}GaxSe{sub 2} solar cell.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Eser, E.; Hegedus, S.S.; McCandless, B.E.; Meyers, P.V.; Shafarman, W.N. [Univ. of Delaware, Newark, DE (United States)

1996-08-01T23:59:59.000Z

140

Survey of Development of CZTS-based Thin Film Solar Cells  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2013 TMS Annual Meeting & Exhibition. Symposium , Alloys and Compounds for Thermoelectric and Solar Cell Applications.

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells; January 28, 2010 -- January 31, 2011  

DOE Green Energy (OSTI)

Final subcontract report for PV Incubator project 'Novel R2R Manufacturable Photonic-Enhanced Thin Film Solar Cells.' The goal of this program was to produce tandem Si cells using photonic bandgap enhancement technology developed at ISU and Lightwave Power that would have an NREL-verified efficiency of 7.5% on 0.25 cm{sup 2} area tandem junction cell on plastic substrates. This goal was met and exceeded within the timeframe and budget of the program. On smaller area cells, the efficiency was even higher, {approx}9.5% (not verified by NREL). Appropriate polymers were developed to fabricate photonic and plasmonic devices on stainless steel, Kapton and PEN substrates. A novel photonic-plasmon structure was developed which shows a promise of improving light absorption in thin film cells, a better light absorption than by any other scheme.

Slafer, D.; Dalal, V.

2012-03-01T23:59:59.000Z

142

Thin-film polycrystalline silicon solar cells. Quarterly report no. 3, October 16, 1980-January 15, 1981  

DOE Green Energy (OSTI)

The objectives of the project are: 1) to develop cell fabrication procedures to further define the maximum capabilities of the conducting oxide/silicon heterojunction solar cells; 2) to optimize the spray fabrication technique for making reproducible high efficiency cells; 3) to assess the stability and the projected lifetime of the cell structure; 4) to identify through appropriate measurements the effects of grain boundaries and intragrain defects on the electronic transport mechanisms in thin-film polycrystalline silicon; and 5) to determine the feasibility of a large-scale fabrication process. Progress is reported.

Ghosh, A. K.; Feng, T.; Eustace, D. J.; Maruska, H. P.

1981-01-01T23:59:59.000Z

143

High-performance parallel interface to synchronous optical network gateway  

DOE Patents (OSTI)

A system of sending and receiving gateways interconnects high speed data interfaces, e.g., HIPPI interfaces, through fiber optic links, e.g., a SONET network. An electronic stripe distributor distributes bytes of data from a first interface at the sending gateway onto parallel fiber optics of the fiber optic link to form transmitted data. An electronic stripe collector receives the transmitted data on the parallel fiber optics and reforms the data into a format effective for input to a second interface at the receiving gateway. Preferably, an error correcting syndrome is constructed at the sending gateway and sent with a data frame so that transmission errors can be detected and corrected in a real-time basis. Since the high speed data interface operates faster than any of the fiber optic links the transmission rate must be adapted to match the available number of fiber optic links so the sending and receiving gateways monitor the availability of fiber links and adjust the data throughput accordingly. In another aspect, the receiving gateway must have sufficient available buffer capacity to accept an incoming data frame. A credit-based flow control system provides for continuously updating the sending gateway on the available buffer capacity at the receiving gateway.

St. John, Wallace B. (Los Alamos, NM); DuBois, David H. (Los Alamos, NM)

1996-01-01T23:59:59.000Z

144

High-performance parallel interface to synchronous optical network gateway  

DOE Patents (OSTI)

Disclosed is a system of sending and receiving gateways interconnects high speed data interfaces, e.g., HIPPI interfaces, through fiber optic links, e.g., a SONET network. An electronic stripe distributor distributes bytes of data from a first interface at the sending gateway onto parallel fiber optics of the fiber optic link to form transmitted data. An electronic stripe collector receives the transmitted data on the parallel fiber optics and reforms the data into a format effective for input to a second interface at the receiving gateway. Preferably, an error correcting syndrome is constructed at the sending gateway and sent with a data frame so that transmission errors can be detected and corrected in a real-time basis. Since the high speed data interface operates faster than any of the fiber optic links the transmission rate must be adapted to match the available number of fiber optic links so the sending and receiving gateways monitor the availability of fiber links and adjust the data throughput accordingly. In another aspect, the receiving gateway must have sufficient available buffer capacity to accept an incoming data frame. A credit-based flow control system provides for continuously updating the sending gateway on the available buffer capacity at the receiving gateway. 7 figs.

St. John, W.B.; DuBois, D.H.

1996-12-03T23:59:59.000Z

145

The CIPRES science gateway: a community resource for phylogenetic analyses  

Science Conference Proceedings (OSTI)

The CIPRES Science Gateway (CSG) provides researchers and educators with browser-based access to community codes for inference of phylogenetic relationships from DNA and protein sequence data. The CSG allows users to deploy jobs on the high-performance ... Keywords: CIPRES, GARLI, MAFFT, MrBayes, RAxML, phylogenetics, science gateway

Mark A. Miller; Wayne Pfeiffer; Terri Schwartz

2011-07-01T23:59:59.000Z

146

Open grid computing environments: advanced gateway support activities  

Science Conference Proceedings (OSTI)

We describe three case studies for providing advanced support for TeraGrid Science Gateways as part of our participation in the Advanced User Support (AUS) team. These case studies include providing workflow support, robust job management, and mass job ... Keywords: ASTA, OGCE software, science gateways workflow suite

Marlon Pierce; Suresh Marru; Raminder Singh; Archit Kulshrestha; Karthik Muthuraman

2010-08-01T23:59:59.000Z

147

Gateway:International/About | Open Energy Information  

Open Energy Info (EERE)

International/About International/About Jump to: navigation, search The International Clean Energy Analysis (ICEA) gateway seeks to catalyze the use of renewable energy and energy efficiency decision support tools to inform policy, program, and project development. Through a U.S. Department of Energy (DOE), National Renewable Energy Laboratory (NREL), and United Nations Industrial Development Organization (UNIDO) collaborative initiative, this community web portal will provide outreach and training programs to foster dissemination and application of analysis tools, with special emphasis on developing countries. It complements existing forums that provide technical information on clean energy policies and project development, with a unique focus on analysis tools and methods.

148

U-173: Symantec Web Gateway Multiple Vulnerabilities | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3: Symantec Web Gateway Multiple Vulnerabilities 3: Symantec Web Gateway Multiple Vulnerabilities U-173: Symantec Web Gateway Multiple Vulnerabilities May 21, 2012 - 7:00am Addthis PROBLEM: Symantec Web Gateway Multiple Vulnerabilities PLATFORM: 5.0.x prior to 5.0.3 ABSTRACT: Several vulnerabilities were reported in Symantec Web Gateway. A remote user can include and execute arbitrary code on the target system. A remote user can conduct cross-site scripting attacks. A remote user can view/delete/upload files on the target system. Reference Links: SecurityTracker Alert ID: 1027078 CVE-2012-0296 CVE-2012-0297 CVE-2012-0298 CVE-2012-0299 IMPACT ASSESSMENT: Medium Discussion: The management interface does not properly authenticate remote users and does not properly validate user-supplied input. A remote user can cause arbitrary scripting code to be executed by the

149

V-106: Citrix Access Gateway Unspecified Security Bypass Vulnerability |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

6: Citrix Access Gateway Unspecified Security Bypass 6: Citrix Access Gateway Unspecified Security Bypass Vulnerability V-106: Citrix Access Gateway Unspecified Security Bypass Vulnerability March 7, 2013 - 6:00am Addthis PROBLEM: A vulnerability has been reported in Citrix Access Gateway PLATFORM: Standard Edition 5.0.x prior to 5.0.4.223524. Versions 4.5.x and 4.6.x are not affected by this vulnerability ABSTRACT: A vulnerability has been reported in Citrix Access Gateway, which can be exploited by malicious people to bypass certain security restrictions. REFERENCE LINKS: Secunia Advisory SA52479 Security Tracker Alert ID 1028255 com/id/1028255 CVE-2013-2263 Citrix Knowledge Center IMPACT ASSESSMENT: High DISCUSSION: The vulnerability could allow an unauthenticated user to gain access to network resources. IMPACT:

150

TiO2 Nanotubes with a ZnO Thin Energy Barrier for Improved Current Efficiency of CdSe Quantum-Dot-Sensitized Solar Cells  

Science Conference Proceedings (OSTI)

This paper reports the formation of a thin ZnO energy barrier between a CdSe quantum dot (Q dots) sensitizer and TiO{sub 2} nanotubes (TONTs) for improved current efficiency of Q dot-sensitized solar cells. The formation of a ZnO barrier between TONTs and the Q dot sensitizer increased the short-circuit current under illumination and also reduced the dark current in a dark environment. The power conversion efficiency of Q dot-sensitized TONT solar cells increased by 25.9% in the presence of the ZnO thin layer due to improved charge-collecting efficiency and reduced recombination.

Lee, W.; Kang, S. H.; Kim, J. Y.; Kolekar, G. B.; Sung, Y. E.; Han, S. H.

2009-01-01T23:59:59.000Z

151

The Construction Information Gateway Stephen R Lockley, Construction Informatics, Newcastle University  

E-Print Network (OSTI)

are overcome. 1 Parand, F. (1996) The Construction Information Gateway Demonstrator, CIBSE Journal (see also

Amor, Robert

152

A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION  

DOE Green Energy (OSTI)

methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

Yue Kuo

2010-08-15T23:59:59.000Z

153

2008 Solar Technologies Market Report  

E-Print Network (OSTI)

investments. Thin Film PV Solar Heating & Cooling Projectused in the report. Solar water heating, space heating ande.g. , PV, CSP, solar water heating) Types of industry

Price, S.

2010-01-01T23:59:59.000Z

154

Cu(In,Ga)Se2 Thin-Film Concentrator Solar Cells: Preprint  

DOE Green Energy (OSTI)

Presented at the 2001 NCPV Program Review Meeting: CIGS cells were designed for operation under concentrated sunlight. This is first report of polycrystalline thin-film cell with efficiency>20%.

Ward, J.; Ramanathan, K.; Hasoon, F.; Coutts, T.; Keane, J.; Moriarty, T; Noufi, R.

2001-10-01T23:59:59.000Z

155

High efficiency thin-film GaAs solar cells. First interim report, March 1--August 30, 1977  

DOE Green Energy (OSTI)

The objective is to demonstrate the feasibility of producing high-efficiency (15% or greater) thin-film GaAs solar cells with costs suitable for terrestrial solar electric power generation. The approach is that of growing GaAs by organio-metallic chemical vapor deposition on recrystallized germanium (Ge) films previously deposited on metal substrates and fabricating AMOS (Antireflecting Metal-Oxide-Semiconductor) solar cells on the GaAs. Previously it had been determined that a water vapor-grown native oxide (temperature = 25/sup 0/C) was the most useful native oxide for AMOS cells. A new chemical surface preparation prior to oxide growth led to more uniform oxides and reduced interface contamination, yielding lower reverse saturation current densities, a near-unity diode ideality factor, and better reproducibility. Substituting silver (Ag) for gold metallization showed no change in starting cell efficiency, but did greatly improve high temperature stability of the AMOS solar cell. A new study was completed on antireflection coatings on AMOS GaAs solar cells, taking into account the spectral response of the cell and nature of the solar spectra, and the results submitted for publication. XPS (X-ray Photoelectron Spectroscopy) studies had found earlier that the more efficient native oxides had primarily As/sub 2/O/sub 3/ and Ga/sub 2/O/sub 3/ with little GaAsO/sub 4/. A new chemical step etching was developed which can be used to profile the oxide in 5- to 7-A/sup 0/ steps without modifying the oxide chemistry as does ion sputtering. A new Schottky barrier structure is described which can give cell efficiencies up to 16% without oxide interfacial layer effects and 20 to 22% with a moderate interfacial layer effect. AMOS solar cells fabricated on sliced polycrystalline GaAs wafers with 100- to 500-..mu..m grains using Sb/sub 2/O/sub 3/ deposited oxides showed 14% cell efficiency compared to 16.2% in a region with few grains.

Stirn, R.J.

1977-12-01T23:59:59.000Z

156

Gateway:Low Emission Development Strategies | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:Low Emission Development Strategies Jump to: navigation, search Leds-Graphics 03.PNG Low Emission Development Strategies (LEDS) Gateway This website supports the creation and implementation of country-driven, analytically rigorous low emission development strategies (LEDS). LEDS will enable countries to transition to low carbon economic development resulting in sustained growth in employment and investment, increased financial flows through carbon markets, reduced greenhouse gas (GHG) emissions, and other social, economic, and environmental benefits.

157

NREL Produces Highly Efficient, Wide-Bandgap, Thin-Film Solar...  

NLE Websites -- All DOE Office Websites (Extended Search)

Low-bandgap cells can lose 25% of their power output and efficiency ratings as solar cell operating temperatures climb to 75C or more, a common occurrence in hot and arid...

158

Barrier Coatings for Thin Film Solar Cells: Final Subcontract Report, September 1, 2002 -- January 30, 2008  

DOE Green Energy (OSTI)

This program has involved investigations of the stability of CdTe and copper-indium-gallium-diselenide (CIGS) solar cells under damp heat conditions and effects of barrier coatings.

Olsen, L. C.

2010-03-01T23:59:59.000Z

159

Light trapping in thin film solar cells using textured photonic crystal  

DOE Patents (OSTI)

A solar cell includes a photoactive region that receives light. A photonic crystal is coupled to the photoactive region, wherein the photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light.

Yi, Yasha (Somerville, MA); Kimerling, Lionel C. (Concord, MA); Duan, Xiaoman (Amesbury, MA); Zeng, Lirong (Cambridge, MA)

2009-01-27T23:59:59.000Z

160

Solar Energy Materials & Solar Cells 91 (2007) 17261732 Optical and structural properties of Ta2O5CeO2 thin films  

E-Print Network (OSTI)

Solar Energy Materials & Solar Cells 91 (2007) 1726­1732 Optical and structural properties of Ta2O5

Thirumalai, Devarajan

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161

Gateway Energy (formerly Econnergy) | Open Energy Information  

Open Energy Info (EERE)

(formerly Econnergy) (formerly Econnergy) Jump to: navigation, search Name Gateway Energy Services Address 400 Rella Blvd., Suite 300 Place Montebello, New York Zip 10901 Sector Services Product Green Power Marketer Website http://www.gesc.com/ Coordinates 41.11592°, -74.105664° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.11592,"lon":-74.105664,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

162

Solar  

Energy.gov (U.S. Department of Energy (DOE))

The U.S. Department of Energy (DOE) leads a large network of researchers and other partners to deliver innovative solar photovoltaic and concentrating solar power technologies that will make solar...

163

DIFFRA TION: ENHAN ED LIGHT A SORPTION OF SOLAR ELLS AND PHOTODETE ...  

POTENTIAL APPLI ATIONS Improved performance of thin For more information or Solar & renewable energy Photovoltaic Thin-film solar cells

164

T-544: Cisco Security Advisory: Cisco Content Services Gateway  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4: Cisco Security Advisory: Cisco Content Services Gateway 4: Cisco Security Advisory: Cisco Content Services Gateway Vulnerabilities T-544: Cisco Security Advisory: Cisco Content Services Gateway Vulnerabilities January 27, 2011 - 7:00am Addthis PROBLEM: Cisco Security Advisory: Cisco Content Services Gateway Vulnerabilities PLATFORM: Cisco IOS Software Release 12.4(24)MD1 on the Cisco CSG2 ABSTRACT: Cisco IOS Software Release 12.4(24)MD1 on the Cisco CSG2 contains two vulnerabilities that can be exploited by a remote, unauthenticated attacker to create a denial of service condition that prevents traffic from passing through the CSG2. These vulnerabilities require only a single content service to be active on the Cisco CSG2 and can be exploited via crafted TCP packets. A three-way handshake is not required to exploit either of these

165

T-544: Cisco Security Advisory: Cisco Content Services Gateway  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4: Cisco Security Advisory: Cisco Content Services Gateway 4: Cisco Security Advisory: Cisco Content Services Gateway Vulnerabilities T-544: Cisco Security Advisory: Cisco Content Services Gateway Vulnerabilities January 27, 2011 - 2:04pm Addthis PROBLEM: Cisco Security Advisory: Cisco Content Services Gateway Vulnerabilities PLATFORM: Cisco IOS Software Release 12.4(24)MD1 on the Cisco CSG2 ABSTRACT: Cisco IOS Software Release 12.4(24)MD1 on the Cisco CSG2 contains two vulnerabilities that can be exploited by a remote, unauthenticated attacker to create a denial of service condition that prevents traffic from passing through the CSG2. These vulnerabilities require only a single content service to be active on the Cisco CSG2 and can be exploited via crafted TCP packets. A three-way handshake is not required to exploit either of these

166

Gateway:Low Emission Development Strategies | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:Low Emission Development Strategies (Redirected from Gateway:International/LEDS) Jump to: navigation, search Leds-Graphics 03.PNG Low Emission Development Strategies (LEDS) Gateway This website supports the creation and implementation of country-driven, analytically rigorous low emission development strategies (LEDS). LEDS will enable countries to transition to low carbon economic development resulting in sustained growth in employment and investment, increased financial flows through carbon markets, reduced greenhouse gas (GHG) emissions, and other social, economic, and environmental benefits.

167

Price of Northeast Gateway Natural Gas LNG Imports (Dollars per...  

Gasoline and Diesel Fuel Update (EIA)

(Dollars per Thousand Cubic Feet) Price of Northeast Gateway Natural Gas LNG Imports (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

168

Price of Northeast Gateway Natural Gas LNG Imports from Egypt...  

Annual Energy Outlook 2012 (EIA)

Egypt (Nominal Dollars per Thousand Cubic Feet) Price of Northeast Gateway Natural Gas LNG Imports from Egypt (Nominal Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2...

169

Price of Northeast Gateway Natural Gas LNG Imports from Trinidad...  

Annual Energy Outlook 2012 (EIA)

and Tobago (Dollars per Thousand Cubic Feet) Price of Northeast Gateway Natural Gas LNG Imports from Trinidad and Tobago (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

170

Securing information gateways with derivation-constrained access control  

Science Conference Proceedings (OSTI)

In pervasive computing environments, information gateways derive specific information, such as a person's location, from raw data provided by a service, such as a videostream offered by a camera. Here, access control to confidential raw data provided ...

Urs Hengartner; Peter Steenkiste

2006-04-01T23:59:59.000Z

171

Gateways, Meters and Demand Response: Opportunity or Folly  

NLE Websites -- All DOE Office Websites (Extended Search)

Gateways, Meters and Demand Response: Opportunity or Folly Speaker(s): Roger Levy Date: November 15, 2001 - 12:00pm Location: Bldg. 90 For technologists, electric utilities provide...

172

Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports (Million...  

U.S. Energy Information Administration (EIA) Indexed Site

(Million Cubic Feet) Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9...

173

Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Trinidad and Tobago (Million Cubic Feet) Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3...

174

Northeast Gateway Natural Gas Liquefied Natural Gas Imports ...  

U.S. Energy Information Administration (EIA) Indexed Site

(Million Cubic Feet) Northeast Gateway Natural Gas Liquefied Natural Gas Imports (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7 Year-8 Year-9...

175

Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Qatar (Million Cubic Feet) Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from Qatar (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6 Year-7...

176

Northeast Gateway Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

from Trinidad and Tobago (Million Cubic Feet) Northeast Gateway Natural Gas Liquefied Natural Gas Imports from Trinidad and Tobago (Million Cubic Feet) Decade Year-0 Year-1 Year-2...

177

Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Malaysia (Million Cubic Feet) Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from Malaysia (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

178

Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from...  

U.S. Energy Information Administration (EIA) Indexed Site

Nigeria (Million Cubic Feet) Gulf Gateway, LA Natural Gas Liquefied Natural Gas Imports from Nigeria (Million Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5 Year-6...

179

THINNING OF THE SUN'S MAGNETIC LAYER: THE PECULIAR SOLAR MINIMUM COULD HAVE BEEN PREDICTED  

Science Conference Proceedings (OSTI)

The solar magnetic activity cycle causes changes in the Sun on timescales that are equivalent to human lifetimes. The minimum solar activity that preceded the current solar cycle (cycle 24) was deeper and quieter than any other recent minimum. Using data from the Birmingham Solar Oscillations Network (BiSON), we show that the structure of the solar sub-surface layers during the descending phase of the preceding cycle (cycle 23) was very different from that during cycle 22. This leads us to believe that a detailed examination of the data would have led to the prediction that the cycle 24 minimum would be out of the ordinary. The behavior of the oscillation frequencies allows us to infer that changes in the Sun that affected the oscillation frequencies in cycle 23 were localized mainly to layers above about 0.996 R{sub Sun }, depths shallower than about 3000 km. In cycle 22, on the other hand, the changes must have also occurred in the deeper-lying layers.

Basu, Sarbani [Department of Astronomy, Yale University, P.O. Box 208101, New Haven, CT 06520-8101 (United States); Broomhall, Anne-Marie; Chaplin, William J.; Elsworth, Yvonne, E-mail: sarbani.basu@yale.edu [School of Physics and Astronomy, University of Birmingham, Edgbaston, Birmingham, B15 2TT (United Kingdom)

2012-10-10T23:59:59.000Z

180

The Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

NLE Websites -- All DOE Office Websites (Extended Search)

Proposition for High Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications Preprint Alan Goodrich, Michael Woodhouse, and Peter Hacke Presented at the 2012 IEEE Photovoltaic Specialists Conference Austin, Texas June 3-8, 2012 Conference Paper NREL/CP-6A20-55477 June 2012 NOTICE The submitted manuscript has been offered by an employee of the Alliance for Sustainable Energy, LLC (Alliance), a contractor of the US Government under Contract No. DE-AC36-08GO28308. Accordingly, the US Government and Alliance retain a nonexclusive royalty-free license to publish or reproduce the published form of this contribution, or allow others to do so, for US Government purposes. This report was prepared as an account of work sponsored by an agency of the United States government.

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
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181

High Performance CIGS Thin-Film Solar Cells: A Laboratory Perspective  

DOE Green Energy (OSTI)

We present a summary of our work on the preparation of CuInGaSe2 (CIGS) absorbers that has led to fabricating record-efficiency solar cells. The use of the three-stage process in conjunction with composition monitoring facilitates the fabrication of solar cells with efficiencies between 18% and 19.5% for absorber bandgap in the range of 1.1-1.2 eV. We describe our recent results in reducing absorber thickness and low-temperature deposition. Our preliminary results on absorbers grown from low-purity source materials show promise of reducing the cost of fabricating the absorber.

Ramanathan, K.; Bhattacharya, R.; Contreras, M.; Keane, J. C.; To, B.; Dhere, R. G.; Noufi, R.

2005-11-01T23:59:59.000Z

182

Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results  

NLE Websites -- All DOE Office Websites (Extended Search)

Solid-State Lighting GATEWAY Solid-State Lighting GATEWAY Demonstration Results to someone by E-mail Share Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results on Facebook Tweet about Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results on Twitter Bookmark Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results on Google Bookmark Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results on Delicious Rank Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results on Digg Find More places to share Solid-State Lighting: Solid-State Lighting GATEWAY Demonstration Results on AddThis.com... LED Lighting Facts CALiPER Program Standards Development Technical Information Network Gateway Demonstrations FAQs Results

183

Preparation of thin film solar cells under very low pressure conditions. Final report, October 1, 1976--September 30, 1977  

DOE Green Energy (OSTI)

In this study the feasibility of fabricating backwall Schottky barrier polycrystalline solar cells under ultra-high vacuum conditions of 1 x 10/sup -10/ torr (N/sub 2/) was investigated. Thin films of electron beam vaporized silicon were deposited on cleaned metal substrates of tungsten, tantalum and hafnium. Mass spectra from the quadrapole residual gas analyzer were used to determine the partial pressure of peak heights of 13 residual gases during each processing step. During separate silicon depositions, the substrate temperature was varied between 400 and 750/sup 0/C and deposition rates between 20 and 750 A/min were used. Surface contamination and metal diffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition and annealing. Auger depth profiling, x-ray analysis, and SEM in the topographic and channeling modes, were utilized to characterize the samples with respect to silicon-metal boundary layer, interdiffusion, silicide formation and grain size of silicon. The clean metal surface was found to enhance thin film silicide growth. Fine grain silicon films were obtained for all samples that were not completely converted to a metallic silicide. Tungsten, tantalum and hafnium were found to form silicides at temperatures as low as 600/sup 0/C.

Schmidt, F.A.; Shanks, H.R.; Bevolo, A.J.; Campisi, G.J.

1977-01-01T23:59:59.000Z

184

Optimization of processing and modeling issues for thin film solar cell devices: Final report, February 3, 1997--September 1, 1998  

DOE Green Energy (OSTI)

This final report describes results achieved under a 20-month NREL subcontract to develop and understand thin-film solar cell technology associated to CuInSe{sub 2} and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE's long-range efficiency, reliability and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development and improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E.

2000-02-28T23:59:59.000Z

185

Wide-Gap Thin Film Si n-i-p Solar Cells Deposited by Hot-Wire CVD: Preprint  

DOE Green Energy (OSTI)

High-voltage wide bandgap thin-film Si n-i-p solar cells have been made using the hot-wire chemical vapor deposition (HWCVD) technique. The best open-circuit voltage (Voc) has exceeded 0.94 V in solar cells using HWCVD in the entire n-i-p structure. A Voc of 0.97V has been achieved using HWCVD in the n and i layers and plasma-enhanced (PE) CVD for the p layer. The high voltages are attributed to the wide-gap i layer and an improved p/i interface. The wide-gap i layer is obtained by using low substrate temperatures and sufficient hydrogen dilution during the growth of the i layer to arrive at the amorphous-to-microcrystalline phase transition region. The optical band gap (E04) of the i layer is found to be 1.90 eV. These high-voltage cells also exhibit good fill factors exceeding 0.7 with short-circuit-current densities of 8 to 10 mA/cm2 on bare stainless steel substrates. We have also carried out photoluminescence (PL) spectroscopy studies and found a correlation between Voc and the PL peak energy position.

Wang, Q.; Iwaniczko, E.; Yang, J.; Lord, K.; Guha, S.; Wang, K.; Han, D.

2002-05-01T23:59:59.000Z

186

Institute of Photo Electronic Thin Film Devices and Technology...  

Open Energy Info (EERE)

Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices...

187

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Annual subcontract report, May 1985 - Jul 1986  

DOE Green Energy (OSTI)

A study was undertaken of the optoelectronic properties of amorphous silicon-hydrogen thin films deposited from disilane at high deposition rates. The information derived from this study was used to fabricate amorphous silicon solar cells with efficiencies exceeding 7%. The intrinsic layer of these solar cells was deposited at 15 angstroms/second. Material properties investigated included dark conductivity, photoconductivity, minority carrier diffusion length, and density of states. The solar cells properties characterized were absolute quantum yield and simulated global AM 1.5 efficiencies. Investigations were undertaken utilizing optical and infrared spectroscopy to optimize the microstructures of the intrinsic amorphous silicon. That work was sponsored by the New York State Energy Research and Development Authority. The information was used to optimize the intrinsic layer of amorphous silicon solar cells, resulting in AM 1.5 efficiencies exceeding 7%.

Wiesmann, H.; Dolan, J.; Fricano, G.; Danginis, V.

1987-02-01T23:59:59.000Z

188

Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991  

DOE Green Energy (OSTI)

This report describes research to demonstrate (1) thin film cadmium telluride solar cells with a quantum efficiency of 75% or higher at 0. 44 {mu}m and a photovoltaic efficiency of 11.5% or greater, and (2) thin film zinc telluride and mercury zinc telluride solar cells with a transparency to sub-band-gap radiation of 65% and a photovoltaic conversion efficiency of 5% and 8%, respectively. Work was directed at (1) depositing transparent conducting semiconductor films by solution growth and metal-organic chemical vapor deposition (MOCVD) technique, (2) depositing CdTe films by close-spaced sublimation (CSS) and MOCVD techniques, (3) preparing and evaluating thin film CdTe solar cells, and (4) preparing and characterizing thin film ZnTe, CD{sub 1-x}Zn{sub 1-x}Te, and Hg{sub 1-x}Zn{sub x}Te solar cells. The deposition of CdS films from aqueous solutions was investigated in detail, and their crystallographic, optical, and electrical properties were characterized. CdTe films were deposited from DMCd and DIPTe at 400{degrees}C using TEGa and AsH{sub 3} as dopants. CdTe films deposited by CSS had significantly better microstructures than those deposited by MOCVD. Deep energy states in CdTe films deposited by CSS and MOCVD were investigated. Thin films of ZnTe, Cd{sub 1- x}Zn{sub x}Te, and Hg{sub 1-x}Zn{sub x}Te were deposited by MOCVD, and their crystallographic, optical, and electrical properties were characterized. 67 refs.

Chu, T.L. [University of South Florida, Tampa, FL (United States)

1992-04-01T23:59:59.000Z

189

Amorphous thin films for solar-cell applications. Final report, September 11, 1978-September 10, 1979  

Science Conference Proceedings (OSTI)

In Section II, Theoretical Modeling, theories for the capture of electrons by deep centers in hydrogenated amorphous silicon (a-Si:H) and for field-dependent quantum efficiency in a-Si:H are presented. In Section III, Deposition and Doping Studies, the optimization of phosphorus-doped a-Si:H carried out in four different discharge systems is described. Some details of the dc proximity and rf magnetron discharge systems are also provided. Preliminary mass spectroscopy studies of the rf magnetron discharge in both SiH/sub 4/ and SiF/sub 4/ are presented. In Section IV, Experimental Methods for Characterizing a-Si:H, recent work involving photoluminescence of fluorine-doped a-Si:H, photoconductivity spectra, the photoelectromagnetic effect, the photo-Hall effect and tunneling into a-Si:H is presented. Also, studies of the growth mechanism of Pt adsorbed on both crystalline Si and a-Si:H are described. Measurements of the surface photovoltage have been used to estimate the distribution of surface states of phosphorus-doped and undoped a-Si:H. Section V, Formation of Solar-Cell Structures, contains information on stacked or multiple-junction a-Si:H solar cells. In Section VI, Theoretical and Experimental Evaluation of Solar-Cell Parameters, an upper limit of approx. = 400 A is established for the hole diffusion length in undoped a-Si:H. A detailed description of carrier generation, recombination and transport in a-Si:H solar cells is given. Finally, some characteristics of Pd-Schottky-barrier cells are described for different processing histories.

Carlson, D E; Balberg, I; Crandall, R S; Goldstein, B C; Hanak, J J; Pankove, J I; Staebler, D L; Weakliem, H A; Williams, R

1980-02-01T23:59:59.000Z

190

High efficiency thin film CdTe and a-Si based solar cells  

DOE Green Energy (OSTI)

This report describes work done by the University of Toledo during the first year of this subcontract. During this time, the CdTe group constructed a second dual magnetron sputter deposition facility; optimized reactive sputtering for ZnTe:N films to achieve 10 ohm-cm resistivity and {approximately}9% efficiency cells with a copper-free ZnTe:N/Ni contact; identified Cu-related photoluminescence features and studied their correlation with cell performance including their dependence on temperature and E-fields; studied band-tail absorption in CdS{sub x}Te{sub 1{minus}x} films at 10 K and 300 K; collaborated with the National CdTe PV Team on (1) studies of high-resistivity tin oxide (HRT) layers from ITN Energy Systems, (2) fabrication of cells on the HRT layers with 0, 300, and 800-nm CdS, and (3) preparation of ZnTe:N-based contacts on First Solar materials for stress testing; and collaborated with Brooklyn College for ellipsometry studies of CdS{sub x}Te{sub 1{minus}x} alloy films, and with the University of Buffalo/Brookhaven NSLS for synchrotron X-ray fluorescence studies of interdiffusion in CdS/CdTe bilayers. The a-Si group established a baseline for fabricating a-Si-based solar cells with single, tandem, and triple-junction structures; fabricated a-Si/a-SiGe/a-SiGe triple-junction solar cells with an initial efficiency of 9.7% during the second quarter, and 10.6% during the fourth quarter (after 1166 hours of light-soaking under 1-sun light intensity at 50 C, the 10.6% solar cells stabilized at about 9%); fabricated wide-bandgap a-Si top cells, the highest Voc achieved for the single-junction top cell was 1.02 V, and top cells with high FF (up to 74%) were fabricated routinely; fabricated high-quality narrow-bandgap a-SiGe solar cells with 8.3% efficiency; found that bandgap-graded buffer layers improve the performance (Voc and FF) of the narrow-bandgap a-SiGe bottom cells; and found that a small amount of oxygen partial pressure ({approximately}2 {times} 10{sup {minus}5} torr) was beneficial for growing high-quality films from ITO targets.

Compaan, A. D.; Deng, X.; Bohn, R. G.

2000-01-04T23:59:59.000Z

191

Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Final report, September 18, 1978-December 31, 1979  

DOE Green Energy (OSTI)

The research has sought the following: to identify and characterize the basic photovoltaic mechanisms that govern the conversion efficiency of polycrystalline thin-film solar cells; to experimentally determine the electronic parameters related to these photovoltaic mechanisms; and to relate these mechanisms and parameters to the conversion efficiency through theoretical physical models developed for engineering design. These objectives are all intimately related. The emphasis of the work has been on polysilicon, although it is building a foundation of understanding useful for similar research in the future on other thin-film materials. Progress is reported. (WHK)

Lindholm, F.A.; Fossum, J.G.; Holloway, P.A.; Neugroschel, A.

1979-01-01T23:59:59.000Z

192

Surface Treatment of CuInGaSe2 Thin Films and Its Effect on the Photovoltaic Properties of Solar Cells: Preprint  

DOE Green Energy (OSTI)

Solar cells have been fabricated with partial electrolyte treatments of CuInGaSe2 (CIGS) thin-film absorbers in lieu of a CdS layer. Treatment of the absorbers in a containing Cd or Zn solution is shown to produce conditions under which efficient solar cells can be fabricated. A similar effect is also observed in CuInGaSSe2 (CIGSS) graded-bandgap absorbers. These observations can be explained by the ability of Cd and Zn to produce n-type doping or inversion in the surface region. We also provide a brief review of similar work done elsewhere and identify directions for future investigations.

Ramanathan, K.; Hasoon, F.S.; Smith, S.; Young, D.L.; Contreras, M.A.; Johnson, P.K.; Pudov, A.O.; Sites, J.R.

2002-10-01T23:59:59.000Z

193

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, January 1, 1979-March 31, 1979  

DOE Green Energy (OSTI)

A theory capable of predicting the performance of polycrystalline silicon solar cells is formulated. It relates grain size to mobility, lifetime, diffusion length, reverse saturation current, open circuit photovoltage and fill factor. Only the diffusion lengths measured by the surface photovoltage technique for grains less than or equal to 5 ..mu..m do not agree with our theory. The reason for this discrepancy is presently being investigated. We conclude that grains greater than or equal to 100 ..mu..m are necessary to achieve efficiencies greater than or equal to 10 percent at AM1 irradiance. The calculations were performed for the case of no grain boundary passivation. At present we are investigating the improvements to be expected from grain boundary passivation. We have determined that the parameters that best fit the available data are as follows: (1) Number of surface states at grain boundaries acting as recombination centers - 1.6 x 10/sup 13//cm/sup 2/. (2) Capture cross section - 2 x 10/sup -16/ cm/sup 2/. (3) Surface recombination velocity at grain boundary - 3.2 x 10/sup 4/ cm/sec. The following types of solar cells are considered in the model: SnO/sub 2//Si Heterostructure, MIS, and p/n junction. In all types of solar cells considered, grain boundary recombination plays a dominant role, especially for small grains. Though the calculations were originally expected to yield only order of magnitude results, they have proven to be accurate for most parameters within 10 percent.

Ghosh, A.K.; Feng, T.; Maruska, H.P.; Fishman, C.

1979-01-01T23:59:59.000Z

194

Identification and Analysis of Distinct Features in Imaging Thin-Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

Electroluminescence and photoluminescence (EL and PL) are two imaging techniques employed at NREL that are used to qualitatively evaluate solar cells. In this work, imaging lab-scale CdTe and CIGS devices provides information about small-area PV response, which will aid in determining the effects of non-uniformities on cell performance. EL, PL, and dark lock-in thermography signatures are first catalogued. Their responses to varying conditions are then studied. Further analysis includes acquiring spectral data, making microscopy measurements, and correlating luminescence to device performance. The goal of this work is to quantitatively determine non-uniformity effects on cell performance using rapid imaging techniques.

Zaunbrecher, K. N.; Johnston, S. W.; Sites, J. R.

2012-06-01T23:59:59.000Z

195

Ultrasonically Sprayed and Inkjet Printed Thin Film Electrodes for Organic Solar Cells  

Science Conference Proceedings (OSTI)

Thin film pi-conjugated poly(3,4ethylenedioxythiophene): poly(styrenesulphonate) (PEDOT:PSS) as a hole transport layer on indium tin oxide is a key element in some of the most efficient organic photovoltaic and light emitting devices to date. Films are typically deposited by spincoating, which is not readily scalable. In this paper we investigate the critical parameters for both inkjet and ultrasonic spray deposition of PEDOT:PSS thin films on commercial indium tin oxide as a potentially scalable approach to contact formation. Inkjet parameters investigated include drop spacing and substrate temperature. Ultrasonic spray coating parameters investigated include substrate temperature and solution flow rate. We also show that the ink viscosity has a Newtonian character, making it well suited for inkjet printing. Films were characterized via optical profilometry, sheet resistance and atomic force microscopy. Optimized inkjet printed and ultrasonic sprayed PEDOT:PSS films were then compared to spincast layers in a prototypical bulk heterojunction photovoltaic device employing a poly(3-hexylthiophene) and [6,6]-PCBM (6,6-phenylC61-butyric acid-methyl ester) blend as the absorber. Practically all three approaches produced devices of comparable efficiency. Efficiencies were 3.6%, 3.5% and 3.3% for spin, spray and inkjet depositions respectively.

Steirer, K. X.; Berry, J. J.; Reese, M. O.; van Hest, M. F. A. M.; Miedaner, A.; Liberatore, M. W.; Collins, R. T.; Ginley, D. S.

2009-01-01T23:59:59.000Z

196

Microsoft Forefront Threat Management Gateway (TMG) Administrator's Companion, 1st edition  

Science Conference Proceedings (OSTI)

Get your Web security, network perimeter security, and application layer security gateway up and running smoothly. This indispensible, single-volume reference details the features and capabilities of Microsoft Forefront Threat Management Gateway (TMG). ...

Jim Harrison; Yuri Diogenes; Mohit Saxena

2010-02-01T23:59:59.000Z

197

U-020: McAfee Web Gateway Web Access Cross Site Scripting Vulnerabilit...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0: McAfee Web Gateway Web Access Cross Site Scripting Vulnerability U-020: McAfee Web Gateway Web Access Cross Site Scripting Vulnerability October 26, 2011 - 9:00am Addthis...

198

OpenMSI: A Science Gateway to Sort Through Bio-Imaging's Big...  

NLE Websites -- All DOE Office Websites (Extended Search)

OpenMSI: A Science Gateway to Sort Through Bio-Imaging's Big Datasets OpenMSI: A Science Gateway to Sort Through Bio-Imaging's Big Datasets August 27, 2013 | Tags: Basic Energy...

199

U-225: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control Vulnerabilities U-225: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control Vulnerabilities...

200

Processing and modeling issues for thin-film solar cell devices. Annual subcontract report, January 16, 1994--January 15, 1995  

DOE Green Energy (OSTI)

This report describes results achieved during the second phase of a four year subcontract to develop and understand thin film solar cell technology related to a-Si and its alloys, CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2}, and CdTe. Accomplishments during this phase include, development of equations and reaction rates for the formation of CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} films by selenization, fabrication of a 15% efficient CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} cell, development of a reproducible, reliable Cu-diffused contact to CdTe, investigation of the role of CdTe-CdS interdiffusion on device operation, investigation of the substitution of HCl for CdCl{sub 2} in the post-deposition heat treatment of CdTe/CdS, demonstration of an improved reactor design for deposition of a-Si films, demonstration of improved process control in the fabrication of a ten set series of runs producing {approximately}8% efficient a-Si devices, demonstration of the utility of a simplified optical model for determining quantity and effect of current generation in each layer of a triple stacked a-Si cell, presentation of analytical and modeling procedures adapted to devices produced with each material system, presentation of baseline parameters for devices produced with each material system, and various investigations of the roles played by other layers in thin film devices including the Mo underlayer, CdS and ZnO in CuIn{sub 1{minus}x}Ga{sub x}Se{sub 2} devices, the CdS in CdTe devices, and the ZnO as window layer and as part of the back surface reflector in a-Si devices. In addition, collaborations with over ten research groups are briefly described. 73 refs., 54 figs., 34 tabs.

Birkmire, R.W.; Phillips, J.E.; Buchanan, W.A.; Hegedus, S.S.; McCandless, B.E.; Shafarman, W.N. [Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion

1995-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Thin film polycrystalline silicon solar cells. Quarterly report No. 1, October 1-December 31, 1979  

DOE Green Energy (OSTI)

The MoSi/sub 2/ separation layer growth rate has been studied as a function of time and temperature. The presence of small amounts of O/sub 2/ in the silicon deposition ambient were found to inhibit the growth rate of the MoSi/sub 2/ layer and also to affect the reliability of shear separation. Void formation in silicon at the Si-MoSi/sub 2/ interface, due predominantly to diffusion of silicon through the MoSi/sub 2/ layer was observed. This is believed to be responsible for shear separation occurring in the silicon film. Gas chromatograhic procedures were developed for characterizing the silicon deposition process. Coherent twin bundles in the grain-enhanced silicon films were not found to adversely influence solar cell efficiency. Several 1 cm x 2 cm solar cells were fabricated. Performance characteristics of these cells are discussed; the best device had a conversion efficiency of 10.7% (under simulated AM1 illumination) with V/sub OC/ = 0.545 V, J/sub SC/ = 28.65 mA/cm/sup 2/ and FF = 68.3%.

Sarma, K.R.; Rice, M.J.; Legge, R.

1979-01-01T23:59:59.000Z

202

High Efficiency Thin Film CdTe and a-Si Based Solar Cells: Final Technical Report, 4 March 1998--15 October 2001  

DOE Green Energy (OSTI)

This is the final report covering about 42 months of this subcontract for research on high-efficiency CdTe-based thin-film solar cells and on high-efficiency a-Si-based thin-film solar cells. Phases I and II have been extensively covered in two Annual Reports. For this Final Report, highlights of the first two Phases will be provided and then detail will be given on the last year and a half of Phase III. The effort on CdTe-based materials is led by Prof. Compaan and emphasizes the use of sputter deposition of the semiconductor layers in the fabrication of CdS/CdTe cells. The effort on high-efficiency a-Si materials is led by Prof. Deng and emphasizes plasma-enhanced chemical vapor deposition for cell fabrication with major efforts on triple-junction devices.

Compaan, A. D.; Deng, X.; Bohn, R. G.

2003-10-01T23:59:59.000Z

203

Development of high-efficiency, thin-film CdTe solar cells. Annual subcontract report, January 1, 1993--December 31, 1993  

DOE Green Energy (OSTI)

Polycrystalline thin film CdTe solar cells are one of the leading candidates for terrestrial photovoltaic applications. Theoretical calculations project an efficiency of 27% for single crystal, single junction CdTe cells, and the practically achievable efficiency for polycrystalline CdTe cells is 18-20%. Polycrystalline CdTe cells made by different groups show a significant variation in short circuit currents, open circuit voltages, and cell efficiencies. A better understanding of carrier loss and transport mechanism is crucial for explaining these differences, improving the yield, and bridging the gap between current and practically achievable limits in CdTe cell efficiencies. The goal of this program is to improve the understanding of the loss mechanisms in thin film CdS/CdTe solar cells and to improve their efficiency by characterizing the properties of the films as well as the finished devices.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Institute of Technology, Atlanta, GA (United States)

1994-09-01T23:59:59.000Z

204

West African Clean Energy Gateway-Resource Assessment | Open Energy  

Open Energy Info (EERE)

African Clean Energy Gateway-Resource Assessment African Clean Energy Gateway-Resource Assessment Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo SWERA-thumb.jpg The SWERA landing page allows for the quick browsing of global data layers.

205

DOE Announces International Agreement on Global Science Online Gateway |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

International Agreement on Global Science Online International Agreement on Global Science Online Gateway DOE Announces International Agreement on Global Science Online Gateway June 12, 2008 - 1:30pm Addthis WASHINGTON, DC - The U.S. Department of Energy (DOE) today announced the establishment of a multilateral alliance to govern the rapidly growing online gateway to international scientific research information--WorldWideScience.org. Officials from organizations representing 38 countries formalized their commitment today in Seoul, Korea, by signing a WorldWideScience Alliance agreement to sustain and build upon joint efforts to provide a single, sophisticated point of access for diverse scientific resources and expertise from nations around the world. "WorldWideScience.org is already a wonderful tool for communication,

206

Gateway:Incentives and Policies | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:Incentives and Policies (Redirected from Gateway:Incentives) Jump to: navigation, search Incentives and Policies for Renewable Energy and Energy Efficiency Renewables & Energy Efficiency Incentives and Policies by State Click on a state to view summaries included from the Database of State Incentives for Renewables & Efficiency (DSIRE) for that state. A separate map is available for summaries included in the Eastern Interconnect Energy Zones Policy Inventory. Help Improve the Policy Databases Are we missing something? Do you see an entry that needs updates?

207

Clyde Gateway (Smart Grid Project) | Open Energy Information  

Open Energy Info (EERE)

Clyde Gateway (Smart Grid Project) Clyde Gateway (Smart Grid Project) Jump to: navigation, search Project Name Clyde Gateway Country United Kingdom Coordinates 55.378052°, -3.435973° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":55.378052,"lon":-3.435973,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

208

A Reference Design for Residential Energy Gateways: Development and  

NLE Websites -- All DOE Office Websites (Extended Search)

A Reference Design for Residential Energy Gateways: Development and A Reference Design for Residential Energy Gateways: Development and Implications Speaker(s): Daniel Arnold Date: October 28, 2011 - 12:00pm Location: 90-3122 Seminar Host/Point of Contact: Janie Page Recent advances in communications, policy, and the installation of smart meters in residences across America has opened the realm of the residence to the possibility of advanced electrical load monitoring and control. With no concrete standards or roadmaps governing communications and capabilities, a fractured market of Gateways, IHDs (In Home Displays), load control switches, and smart appliances has emerged in an attempt to take advantage of this burgeoning opportunity. What results from this mixture is a lack of interoperability amongst products, which limits consumer

209

ECOWAS Clean Energy Gateway-Transportation | Open Energy Information  

Open Energy Info (EERE)

ECOWAS Clean Energy Gateway-Transportation ECOWAS Clean Energy Gateway-Transportation Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo Introduction→ Step 1 Step 2 Step 3 Step 4

210

DOE Announces International Agreement on Global Science Online Gateway |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Announces International Agreement on Global Science Online Announces International Agreement on Global Science Online Gateway DOE Announces International Agreement on Global Science Online Gateway June 12, 2008 - 1:30pm Addthis WASHINGTON, DC - The U.S. Department of Energy (DOE) today announced the establishment of a multilateral alliance to govern the rapidly growing online gateway to international scientific research information--WorldWideScience.org. Officials from organizations representing 38 countries formalized their commitment today in Seoul, Korea, by signing a WorldWideScience Alliance agreement to sustain and build upon joint efforts to provide a single, sophisticated point of access for diverse scientific resources and expertise from nations around the world. "WorldWideScience.org is already a wonderful tool for communication,

211

ECOWAS Clean Energy Gateway-About | Open Energy Information  

Open Energy Info (EERE)

ECOWAS Clean Energy Gateway-About ECOWAS Clean Energy Gateway-About Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo The ECOWAS Centre for Renewable Energy and Energy Efficiency (ECREEE) is

212

Global Science Gateway Now Open | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Now Open Now Open Global Science Gateway Now Open June 22, 2007 - 2:07pm Addthis WorldWideScience.org opens public access to more than 200 million pages of international research information WASHINGTON, DC-The U.S. Department of Energy (DOE) and the British Library, along with eight other participating countries, today opened an online global gateway to science information from 15 national portals. The gateway, WorldWideScience.org, gives citizens, researchers and anyone interested in science the capability to search science portals not easily accessible through popular search technology such as that deployed by Google, Yahoo! and many other commercial search engines. "Scientific research results are archived globally in a plethora of sources, many unknown and unreachable through usual search engines," Dr.

213

ECOWAS Clean Energy Gateway-Organizations and Networks | Open Energy  

Open Energy Info (EERE)

ECOWAS Clean Energy Gateway-Organizations and Networks ECOWAS Clean Energy Gateway-Organizations and Networks Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo Registered Technical and Research Organizations

214

Accelerating science gateway development with Web 2.0 and Swift  

Science Conference Proceedings (OSTI)

A Science Gateway is a computational web portal that enables scientists to run scientific simulations, data analysis, and visualization through their web browsers. The major problem of building a science gateway on TeraGrid is how to deploy scientific ... Keywords: OpenSocial, Web2.0, science gateway, workflow

Wenjun Wu; Thomas Uram; Michael Wilde; Mark Hereld; Michael E. Papka

2010-08-01T23:59:59.000Z

215

A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION  

SciTech Connect

A novel thin-film poly-Si fabrication process has been demonstrated. This low thermal budget process transforms the single- and multi-layer amorphous silicon thin films into a poly-Si structure in one simple step over a pulsed rapid thermal annealing process with the enhancement of an ultrathin Ni layer. The complete poly-Si solar cell was fabricated in a short period of time without deteriorating the underneath glass substrate. The unique vertical crystallization process including the mechanism is discussed. Influences of the dopant type and process parameters on crystal structure will be revealed. The poly-Si film structure has been proved using TEM, XRD, Raman, and XPS methods. The poly-Si solar cell structure and the performance have been examined. In principle, the new process is potentially applicable to produce large-area thin-film poly-Si solar cells at a high throughput and low cost. A critical issue in this process is to prevent the excessive dopant diffusion during crystallization. Process parameters and the cell structure have to be optimized to achieve the production goal.

Yue Kuo

2010-08-15T23:59:59.000Z

216

2008 Solar Technologies Market Report  

E-Print Network (OSTI)

Solar Completes 10MW Thin Film Solar Power Plant for SempraT. ; (2008) Concentrating Solar PowerTechnology, Cost, and2009). Concentrating solar power plants of the southwest

Price, S.

2010-01-01T23:59:59.000Z

217

Polycrystalline thin-film cadmium telluride solar cells fabricated by electrodeposition. Annual technical report  

DOE Green Energy (OSTI)

During the past year, Colorado School of Mines (CSM) researchers performed systematic studies of the growth and properties of electrodeposition CdS and back-contact formation using Cu-doped ZnTe, with an emphasis on low Cu concentrations. CSM also started to explore the stability of its ZnTe-Cu contacted CdTe solar cells. Researchers investigated the electrodeposition of CdS and its application in fabricating CdTe/CdS solar cells. The experimental conditions they explored in this study were pH from 2.0 to 3.0; temperatures of 80 and 90 C; CdCl{sub 2} concentration of 0.2 M; deposition potential from {minus}550 to {minus}600 mV vs. Ag/AgCl electrode; [Na{sub 2}S{sub 2}O{sub 4}] concentration between 0.005 and 0.05 M. The deposition rate increases with increase of the thiosulfate concentration and decrease of solution pH. Researchers also extended their previous research of ZnTe:Cu films by investigating films doped with low Cu concentrations (< 5 at. %). The low Cu concentration enabled them to increase the ZnTe:Cu post-annealing temperature without causing excessive Cu diffusion into CdTe or formation of secondary phases. The effects of Cu doping concentration and post-deposition annealing temperature on the structural, compositional, and electrical properties of ZnTe were studied systematically using X-ray diffraction, atomic force microscopy, electron microprobe, Hall effect, and conductivity measurements.

Trefny, J.U.; Mao, D. [Colorado School of Mines, Golden, CO (United States). Dept. of Physics

1998-01-01T23:59:59.000Z

218

OpenEI:Old Geothermal Gateway | Open Energy Information  

Open Energy Info (EERE)

Gateway Gateway Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Print PDF Geothermalpower.jpg GeoInfo.png Geothermal Information Geothermal Energy Overview Types of Geothermal Resources Energy Conversion Technologies Cooling Technologies Exploration Techniques Reference Materials GeoModels.png Geothermal Models & Tools GETEM SAM Geothermal Prospector Exploration Cost and Time Metric Georesource.png Resource Assessments USGS Maps (2008) Geothermal Resource Potential Map Geothermal Areas Geothermal Regions Installed.png Installed & Planned Capacity Geothermal Generation Installed Capacity Planned Capacity Geofinancing.png Geothermal Financing Developers' Financing Handbook RE Project Finance CREST HOMER REFTI GeoR&D.png Geothermal RD&D Enhanced Geothermal Systems

219

Theoretical Analysis of Effects of Deep Level, Back Contact, and Absorber Thickness on Capacitance-Voltage Profiling of CdTe Thin-Film Solar Cells  

Science Conference Proceedings (OSTI)

The apparent carrier density profile measured by the capacitance-voltage technique in CdTe thin-film solar cells frequently displays a distinctive U-shape. We show that, even assuming a uniform carrier density, such a U-shape may arise from deep levels, a non-ohmic back-contact, and a thin absorber, which are commonly present in practical CdTe thin-film solar cells. A thin CdTe absorber contributes to the right branch of the U-shape due to a punch-through effect at reverse or zero biases, when the CdTe absorber is nearly fully depleted. A rectifying back-contact contributes to both branches of the U-shape due to voltage sharing with the front junction under a forward bias and early punch-through under a reverse bias. Deep levels contribute to the right branch, but also raise the bottom of the U-shape, leading to an overestimate of carrier density.

Li, J. V.; Halverson, A. F.; Sulima, O. V.; Bansal, S.; Burst, J. M.; Barnes, T. M.; Gessert, T. A.; Levi, D. H.

2012-05-01T23:59:59.000Z

220

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

1999-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

High efficiency, low cost, thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer.

Sopori, Bhushan L. (Denver, CO)

2001-01-01T23:59:59.000Z

222

High efficiency low cost thin film silicon solar cell design and method for making  

DOE Patents (OSTI)

A semiconductor device is described having a substrate, a conductive intermediate layer deposited onto said substrate, wherein the intermediate layer serves as a back electrode, an optical reflector, and an interface for impurity gettering, and a semiconductor layer deposited onto said intermediate layer, wherein the semiconductor layer has a grain size at least as large as the layer thickness, and preferably about ten times the layer thickness. The device is formed by depositing a metal layer on a substrate, depositing a semiconductive material on the metal-coated substrate to produce a composite structure, and then optically processing the composite structure by illuminating it with infrared electromagnetic radiation according to a unique time-energy profile that first produces pits in the backside surface of the semiconductor material, then produces a thin, highly reflective, low resistivity alloy layer over the entire area of the interface between the semiconductor material and the metal layer, and finally produces a grain-enhanced semiconductor layer. The time-energy profile includes increasing the energy to a first energy level to initiate pit formation and create the desired pit size and density, then ramping up to a second energy level in which the entire device is heated to produce an interfacial melt, and finally reducing the energy to a third energy level and holding for a period of time to allow enhancement in the grain size of the semiconductor layer. 9 figs.

Sopori, B.L.

1999-04-27T23:59:59.000Z

223

Boron arsenide thin film solar cell development. Quarterly report No. 1  

DOE Green Energy (OSTI)

A large portion of the effort expended in the first quarter was devoted to the design, assembly, and testing of the film growth apparatus. The reactor has been completed and tested by depositing boron from diborane gas onto heated quartz substrates. The objective of this effort was to achieve film growth, which has been accomplished. Within the last month, attempts to grow boron arsenide films have been made by introducing both diborane and arsine into the reactor. Thin films have been grown on quartz and sapphire (alumina) substrates. Variations in film thickness, composition, degree of crystallinity, and conductivity have been observed as a result of variation of the deposition parameters, such as type and flow rate of carrier gases, substrate temperature, and substrate materials. X-ray analysis of several samples indicates that films containing boron and arsenic have been grown. No crystalline films have been produced to date. Electrical and optical measurements indicate some correlation between at least one of the films grown and the results achieved by Chu, et al. on BAs. Thus far, the electrical conductivity, film topography, optical absorption, index of refraction, impurity type, and photo-conductivity have been investigated on one sample. This material appears to be B/sub x/As/sub y/ and could be BAs. Further investigations will be required to be conclusive.

Boone, J.L.; Van Doren, T.P.

1979-07-01T23:59:59.000Z

224

Solar Energy Materials & Solar Cells 92 (2008) 821829 Modeling the optical properties of WO3 and WO3SiO2 thin films  

E-Print Network (OSTI)

Solar Energy Materials & Solar Cells 92 (2008) 821­829 Modeling the optical properties of WO3 the optical response of the films in the near-UV and visible region: two interband transitions for energies E

Thirumalai, Devarajan

225

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells  

DOE Green Energy (OSTI)

This document describes the progress made in obtaining stable, a-Si-based submodules that have a large area and high efficiency. Conversion efficiencies of up to 11.95% were obtained in small-area, single-junction a-Si solar cells using textured TiO{sub 2}, superlattice p-layers, graded carbon concentrations near the p/i interface, and highly reflective ITO/silver back contacts. Single- junction a-SiC and a-SiGe p-i-n cells were also fabricated that had conversion efficiencies of 9%--11%, and some recently fabricated stacked-junction cells had conversion efficiencies of about 10%. In materials research boron-doped microcrystalline SiC films were recently developed containing up to 6 at. % carbon with conductivities of 3 {times} 10{sup {minus}3}/{Omega}-cm at room temperature and activation energies of 0.11 eV. Microcrystalline film growth was shown to be strongly influenced by the nature of the substrate, with nucleation occurring more readily on a-Si substrates than on TiO{sub 2}. Stability studies show that light-induced degradation is usually enhanced by the presence of carbon grading near the p/i interface. In general, adding either germanium (from GeH{sub 4}) or carbon (from CH{sub 4}) to the i-layer of a p-i-n cell leads to enhanced light-induced degradation. 13 refs., 80 figs., 17 tabs.

Catalano, A.W.; Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; D'Aiello, R.V.; Dickson, C.R.; Fortmann, C.M.; Goldstein, B.; McVeigh, J.; Morris, J.; Newton, J.L.; Wiedeman, S. (Solarex Corp., Newtown, PA (USA). Thin Film Div.)

1989-10-01T23:59:59.000Z

226

High-efficiency cadmium and zinc-telluride-based thin-film solar cells  

DOE Green Energy (OSTI)

This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

Rohatgi, A.; Sudharsanan, R.; Ringel, S. (Georgia Inst. of Tech., Atlanta, GA (United States))

1992-02-01T23:59:59.000Z

227

Development of copper sulfide/cadmium sulfide thin-film solar cells  

DOE Green Energy (OSTI)

The purpose of this work has been to identify aspects of cell fabrication and treatment which are critical for achieving high efficiency Cu/sub 2/S/CdS solar cells. In approaching the problem several comparisons were made of the effects of specific steps in two methods of cell fabrication. These methods had previously given cells of about 6% and a maximum of 9% efficiency. Three areas requiring special attention and specific means to achieve acceptable results were identified. (1) The Cu/sub 2/S/CdS heterojunction area must be minimized. If single source evaporations of CdS are made on substrates whose temperatures (approx. 220/sup 0/C) are monitored and controlled using welded thermocouples, the CdS films will have adequately large grains (grain diameter greater than or equal to 2 ..mu..m) and will not develop significant etch pits during texturing in a mild etchant solution. (2) The termination of the wet barrier processing steps must be done carefully. An acceptable termination involves minimizing the amount of cuprous chloride retained on the cell surface during transfer to a rinsing stage while providing adequate exclusion of air from the space above the surface of the cuprous chloride solution. (3) Once formed, the Cu/sub 2/S layer should not be exposed to high temperatures (>100/sup 0/C) for long periods of time (> 5 min) if surface adsorbed moisture or oxygen are present. Heat treatments in ampoules under flowing hydrogen atmospheres should be preceded and followed by periods of at least 30 minutes at room temperature in the reducing ambient. If all these precautions are taken, wet chemical barrier processing of thermally evaporated CdS films on zinc-plated copper foil substrates yields cells of nearly 8% conversion efficiency without AR coating.

Szedon, J.R.; Biter, W.J.; Abel, J.A.; Dickey, H.C.; Shirland, F.A.

1981-02-27T23:59:59.000Z

228

21-kW Thin-Film PV Technology Validation -- An NREL/Solar Energy Centre of India MOU Cooperative Project  

SciTech Connect

This paper summarizes findings during a one-week (27-31 October 2003) site visit to the Thin-Film Technology Test Bed at India's Solar Energy Centre (SEC) near New Delhi. The U.S. and Indian governments signed a Memorandum of Understanding in March 2000 to undertake a 50-50 cost-shared 21-kW thin-film PV technology validation project to evaluate the performance of thin-film photovoltaic (PV) modules under Indian climatic conditions. This project benefits Indian researchers by giving them experience with cost-effective PV materials, and it benefits the United States because data will be sent to the appropriate U.S. thin-film PV manufacturers for evaluation and analysis. During the visit, NREL personnel engaged in technical discussions regarding thin-film PV technologies with Ministry of Non-Conventional Energy Sources engineers and scientists. Issues included inspecting the newly constructed arrays, discussing better methods of electrically loading the PV arrays, taking I-V traces, and gathering baseline I-V data.

McNutt, P. F.; Ullal, H. S.

2005-01-01T23:59:59.000Z

229

21-kW Thin-Film PV Technology Validation -- An NREL/Solar Energy Centre of India MOU Cooperative Project  

DOE Green Energy (OSTI)

This paper summarizes findings during a one-week (27-31 October 2003) site visit to the Thin-Film Technology Test Bed at India's Solar Energy Centre (SEC) near New Delhi. The U.S. and Indian governments signed a Memorandum of Understanding in March 2000 to undertake a 50-50 cost-shared 21-kW thin-film PV technology validation project to evaluate the performance of thin-film photovoltaic (PV) modules under Indian climatic conditions. This project benefits Indian researchers by giving them experience with cost-effective PV materials, and it benefits the United States because data will be sent to the appropriate U.S. thin-film PV manufacturers for evaluation and analysis. During the visit, NREL personnel engaged in technical discussions regarding thin-film PV technologies with Ministry of Non-Conventional Energy Sources engineers and scientists. Issues included inspecting the newly constructed arrays, discussing better methods of electrically loading the PV arrays, taking I-V traces, and gathering baseline I-V data.

McNutt, P. F.; Ullal, H. S.

2005-01-01T23:59:59.000Z

230

U-225: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX 5: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control Vulnerabilities U-225: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control Vulnerabilities August 1, 2012 - 5:37am Addthis PROBLEM: Citrix Access Gateway Plug-in for Windows nsepacom ActiveX Control Vulnerabilities PLATFORM: Citrix Access Gateway 9.x ABSTRACT: Two vulnerabilities in Citrix Access Gateway Plug-in for Windows can be exploited by malicious people to compromise a user's system. reference LINKS: Citrix Knowledge Center Secunia Advisory SA45299 Secunia Research Secunia Research CVE-2011-2592 CVE-2011-2593 IMPACT ASSESSMENT: High Discussion: Research has discovered two vulnerabilities in Citrix Access Gateway Plug-in for Windows, which can be exploited by malicious people to

231

T-701: Citrix Access Gateway Enterprise Edition Input Validation Flaw in  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

1: Citrix Access Gateway Enterprise Edition Input Validation 1: Citrix Access Gateway Enterprise Edition Input Validation Flaw in Logon Portal Permits Cross-Site Scripting Attacks T-701: Citrix Access Gateway Enterprise Edition Input Validation Flaw in Logon Portal Permits Cross-Site Scripting Attacks August 25, 2011 - 3:33pm Addthis PROBLEM: A vulnerability was reported in Citrix Access Gateway Enterprise Edition. A remote user can conduct cross-site scripting attacks. PLATFORM: Citrix Access Gateway Enterprise Edition 9.2-49.8 and prior. Citrix Access Gateway Enterprise Edition version 9.3 is not affected by this vulnerability. ABSTRACT: Citrix Access Gateway Enterprise Edition Input Validation Flaw in Logon Portal Permits Cross-Site Scripting Attacks. reference LINKS: SecurityTracker Alert ID: 1025973 Citrix Document ID: CTX129971

232

The Web Services Architecture and the UNICORE Gateway  

Science Conference Proceedings (OSTI)

Since its inception a significant asset of the UNICORE Grid middleware has been the Gateway which presents a single point of entry to services available at a particular UNICORE site. This paper presents the design and implementation of the SOAP and WS-Addressing ...

Roger Menday

2006-02-01T23:59:59.000Z

233

DP9: an OAI gateway service for web crawlers  

Science Conference Proceedings (OSTI)

Many libraries and databases are closed to general-purpose Web crawlers, and they expose their content only through their own search engines. At the same time many researchers attempt to locate technical papers through general-purpose Web search engines. ... Keywords: deep web, gateway service, open archives initiative

Xiaoming Liu; Kurt Maly; Mohammad Zubair; Michael L. Nelson

2002-07-01T23:59:59.000Z

234

Shengrui Solar | Open Energy Information  

Open Energy Info (EERE)

search Name Shengrui Solar Place Hong Kong Product Hong Kong headquartered company with thin-film PV production in China. References Shengrui Solar1 LinkedIn Connections...

235

High-Efficiency CdTe and CIGS Thin-Film Solar Cells: Highlights and Challenges; Preprint  

DOE Green Energy (OSTI)

Thin-film photovoltaic (PV) modules of CdTe and Cu(In,Ga)Se2 (CIGS) have the potential to reach cost-effective PV-generated electricity. These technologies have transitioned from the laboratory to the market place. Pilot production and first-time manufacturing are ramping up to higher capacity and enjoying a flood of venture-capital funding. CIGS solar cells and modules have achieved 19.5% and 13% efficiencies, respectively. Likewise, CdTe cells and modules have reached 16.5% and 10.2% efficiencies, respectively. Even higher efficiencies from the laboratory and from the manufacturing line are only a matter of time. Manufacturing-line yield continues to improve and is surpassing 85%. Long-term stability has been demonstrated for both technologies; however, some failures in the field have also been observed, emphasizing the critical need for understanding degradation mechanisms and packaging options. The long-term potential of the two technologies require R&D emphasis on science and engineering-based challenges to find solutions to achieve targeted cost-effective module performance, and in-field durability. Some of the challenges are common to both, e.g., in-situ process control and diagnostics, thinner absorber, understanding degradation mechanisms, protection from water vapor, and innovation in high-speed processing and module design. Other topics are specific to the technology, such as lower-cost and fast-deposition processes for CIGS, and improved back contact and voltage for CdTe devices.

Noufi, R.; Zweibel, K.

2006-05-01T23:59:59.000Z

236

Development of recrystallization and thin-film solar cell processes. Final report, October 1, 1977-September 30, 1978  

DOE Green Energy (OSTI)

The program had two thrusts: (1) based upon electron-beam thermal treatment of deposited silicon films, to increase crystallite sizes to the range thought to be useful for polycrystalline, thin-film cell fabrication; and (2) to explore the feasibility of applying the directed-energy technologies of ion implantation and pulsed electron beam activation, previously developed for silicon cell fabrication, to junction formation in III-V compounds. The culmination of the recrystallization effort was demonstrating grains broader than the 30-..mu..m film in which they were regrown. This proof of principle was accomplished by means of two-step thermal process that consisted of large-area pulsed electron beam melting followed by small-area heating in a moving DC electron beam. The pulsed beam treatment reduced the three-dimensional disorder of the initial submicrometer crystallite silicon film to one characterized by submicrometercross-section, full-film-thickness, columnar crystallites. The swept beam treatment allowed coalesence of these columnar crystallites, through directional freezing, in the melt path of the beam. It is believed that this demonstration is the first evidence of greater-than-film thickness recrystallization of useful thickness silicon films other than by extended heat treatment at greater than 1350/sup 0/C. The results of the studies on junction formation in III-V materials, while not so dramatic, have shown that low-energy ion implantation is a potentially viable alternative to liquid or vapor phase epitaxy in the fabrication of GaAs solar cells. Further, the technical feasibility of pulsed electron beam activation of ion implanted junctions in GaAs has been demonstrated. Lastly, the concept of forming front-layer windows of GaP and AlGaAs on GaAs by high-dose ion implantation has been shown to be technically feasible.

Solomon, S.J.

1979-05-01T23:59:59.000Z

237

INCREASED CELL EFFICIENCY IN InGaAs THIN FILM SOLAR CELLS WITH DIELECTRIC AND METAL BACK REFLECTORS  

E-Print Network (OSTI)

solar cells enable very high photovoltaic efficiencies by virtue of employing different band gap to increase the short circuit current and the photovoltaic efficiency of solar cells. INTRODUCTION Multi-junction solar cells based on III-V compound semiconductors are the most efficient photovoltaic devic- es

Heaton, Thomas H.

238

Solar Power | Open Energy Information  

Open Energy Info (EERE)

Gateway Gateway Edit History Facebook icon Twitter icon » Solar Power (Redirected from Solar) Jump to: navigation, search Solar Energy Companies Loading map... {"format":"googlemaps3","type":"SATELLITE","types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"limit":1000,"offset":0,"link":"all","sort":[""],"order":[],"headers":"show","mainlabel":"","intro":"","outro":"","searchlabel":"\u2026 further results","default":"","geoservice":"google","zoom":false,"width":"99%","height":"300px","centre":false,"layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":true,"searchmarkers":"","icon":"","visitedicon":"","forceshow":true,"showtitle":true,"hidenamespace":false,"template":false,"title":"","label":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"locations":[{"text":"

239

Development of Thin Film Silicon Solar Cell Using Inkjet Printed Silicon and Other Inkjet Processes: Cooperative Research and Development Final Report, CRADA Number CRD-07-260  

Science Conference Proceedings (OSTI)

The cost of silicon photovoltaics (Si-PV) can be greatly lowered by developing thin-film crystalline Si solar cells on glass or an equally lower cost substrate. Typically, Si film is deposited by thermal evaporation, plasma enhanced chemical vapor deposition, and sputtering. NREL and Silexos have worked under a CRADA to develop technology to make very low cost solar cells using liquid organic precursors. Typically, cyclopentasilane (CPS) is deposited on a glass substrate and then converted into an a-Si film by UV polymerization followed by low-temperature optical process that crystallizes the amorphous layer. This technique promises to be a very low cost approach for making a Si film.

Sopori, B.

2012-04-01T23:59:59.000Z

240

Development of a Wide Bandgap Cell for Thin Film Tandem Solar Cells: Final Technical Report, 6 November 2003 - 5 January 2007  

DOE Green Energy (OSTI)

The objective of this research program was to develop approaches for a transparent wide-bandgap cell to be used in a thin-film tandem polycrystalline solar cell that can ultimately attain 25% efficiency. Specific goals included the research and development of Cu(InGa)(SeS)2 and Cd1-xZnxTe alloys with a bandgap from 1.5 to 1.8 eV, demonstrating the potential of a 15% cell efficiency with a transparent contact, and supporting the High Performance PV Program. This Final Report presents results that emphasize the 3rd phase of the program.

Shafarman, W.; McCandless, B.

2008-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

ECOWAS Clean Energy Gateway-Finance | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon » ECOWAS Clean Energy Gateway-Finance Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png

242

ECOWAS Clean Energy Gateway-Links | Open Energy Information  

Open Energy Info (EERE)

Page Page Edit History Facebook icon Twitter icon » ECOWAS Clean Energy Gateway-Links Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo

243

Gateway:Incentives and Policies | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:Incentives and Policies Jump to: navigation, search Incentives and Policies for Renewable Energy and Energy Efficiency Renewables & Energy Efficiency Incentives and Policies by State Click on a state to view summaries included from the Database of State Incentives for Renewables & Efficiency (DSIRE) for that state. A separate map is available for summaries included in the Eastern Interconnect Energy Zones Policy Inventory. Help Improve the Policy Databases Are we missing something? Do you see an entry that needs updates? Click on the "add new" links below, enter suggested edits into existing

244

ECOWAS Clean Energy Gateway-Help | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon » ECOWAS Clean Energy Gateway-Help Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png

245

ECOWAS Clean Energy Gateway-Technology Data | Open Energy Information  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon » ECOWAS Clean Energy Gateway-Technology Data Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png

246

U-020: McAfee Web Gateway Web Access Cross Site Scripting Vulnerability |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

0: McAfee Web Gateway Web Access Cross Site Scripting 0: McAfee Web Gateway Web Access Cross Site Scripting Vulnerability U-020: McAfee Web Gateway Web Access Cross Site Scripting Vulnerability October 26, 2011 - 9:00am Addthis PROBLEM: McAfee Web Gateway Web Access Cross Site Scripting Vulnerability. PLATFORM: The vulnerability is reported in versions prior to 7.1.5.2. ABSTRACT: Cross-Site Scripting vulnerabilities allow a third party to manipulate the content or behavior of a web application in a user's browser, without compromising the underlying system. Attackers can exploit this issue by enticing an unsuspecting user to follow a malicious URI. reference LINKS: McAfee Web Gateway Release Notes Bugtraq ID: 50341 Secunia Advisory: SA46570 IMPACT ASSESSMENT: Medium Discussion: A vulnerability has been reported in McAfee Web Gateway, which can be

247

U-219: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

19: Symantec Web Gateway Input Validation Flaws Lets Remote 19: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords U-219: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords July 24, 2012 - 7:00am Addthis PROBLEM: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords PLATFORM: Symantec Web Gateway 5.0.x.x ABSTRACT: Several vulnerabilities were reported in Symantec Web Gateway. REFERENCE LINKS: Security Advisories Relating to Symantec Products SecurityTracker Alert ID: 1027289 Bugtraq ID: 54424 Bugtraq ID: 54425 Bugtraq ID: 54426 Bugtraq ID: 54427 Bugtraq ID: 54429 Bugtraq ID: 54430

248

U-219: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

19: Symantec Web Gateway Input Validation Flaws Lets Remote 19: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords U-219: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords July 24, 2012 - 7:00am Addthis PROBLEM: Symantec Web Gateway Input Validation Flaws Lets Remote Users Inject SQL Commands, Execute Arbitrary Commands, and Change User Passwords PLATFORM: Symantec Web Gateway 5.0.x.x ABSTRACT: Several vulnerabilities were reported in Symantec Web Gateway. REFERENCE LINKS: Security Advisories Relating to Symantec Products SecurityTracker Alert ID: 1027289 Bugtraq ID: 54424 Bugtraq ID: 54425 Bugtraq ID: 54426 Bugtraq ID: 54427 Bugtraq ID: 54429 Bugtraq ID: 54430

249

V-225: McAfee Email Gateway SMTP Processing Flaw Lets Remote Users Deny  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

5: McAfee Email Gateway SMTP Processing Flaw Lets Remote Users 5: McAfee Email Gateway SMTP Processing Flaw Lets Remote Users Deny Service V-225: McAfee Email Gateway SMTP Processing Flaw Lets Remote Users Deny Service August 23, 2013 - 1:26am Addthis PROBLEM: A vulnerability was reported in McAfee Email Gateway. A remote user can cause denial of service conditions. PLATFORM: McAfee Email Gateway (MEG) 7.5 ABSTRACT: A remote user can cause the SMTP proxy to stop responding. REFERENCE LINKS: SecurityTracker Alert ID: 1028941 GENERIC-MAP-NOMATCH IMPACT ASSESSMENT: High DISCUSSION: A vulnerability was reported in McAfee Email Gateway. A remote user can cause denial of service conditions.A remote user can send a specially crafted e-mail to cause the ws_inv-smtp process to enter an infinite loop and cause the target SMTP proxy to stop responding.

250

Diffraction: Enhanced Light Absorption of Solar Cells and ...  

Solar and Renewable Energy Photovoltaic Thin-film Solar Cells Space Solar Cells Polarization-Dependent Photodetectors BENEFITS Improved performance of

251

SSC HHV Solar Technologies JV | Open Energy Information  

Open Energy Info (EERE)

JV Jump to: navigation, search Name SSC & HHV Solar Technologies JV Place Ontario, Canada Sector Solar Product Canada-based thin film solar panel manufacturing facility....

252

The development of a south Texas health information gateway : negotiating the construction of information.  

E-Print Network (OSTI)

??This study examines the challenges, issues and complexities surrounding the construction of information for a South Texas Internet-based, health information gateway. It explores the collaborative (more)

Kaercher, Deborah J.

2007-01-01T23:59:59.000Z

253

Large-Scale PV Module Manufacturing Using Ultra-Thin Polycrystalline Silicon Solar Cells: Final Subcontract Report, 1 April 2002--28 February 2006  

DOE Green Energy (OSTI)

The major objectives of this program were to continue advances of BP Solar polycrystalline silicon manufacturing technology. The Program included work in the following areas. (1) Efforts in the casting area to increase ingot size, improve ingot material quality, and improve handling of silicon feedstock as it is loaded into the casting stations. (2) Developing wire saws to slice 100-..mu..m-thick silicon wafers on 290-..mu..m-centers. (3) Developing equipment for demounting and subsequent handling of very thin silicon wafers. (4) Developing cell processes using 100-..mu..m-thick silicon wafers that produce encapsulated cells with efficiencies of at least 15.4% at an overall yield exceeding 95%. (5) Expanding existing in-line manufacturing data reporting systems to provide active process control. (6) Establishing a 50-MW (annual nominal capacity) green-field Mega-plant factory model template based on this new thin polycrystalline silicon technology. (7) Facilitating an increase in the silicon feedstock industry's production capacity for lower-cost solar-grade silicon feedstock..

Wohlgemuth, J.; Narayanan, M.

2006-07-01T23:59:59.000Z

254

Studies of pure and nitrogen-incorporated hydrogenated amorphous carbon thin films and their possible application for amorphous silicon solar cells  

Science Conference Proceedings (OSTI)

Hydrogenated amorphous carbon (a-C:H) and nitrogen-incorporated a-C:H (a-C:N:H) thin films were deposited using radio frequency-plasma-enhanced chemical vapor deposition technique and studied for their electrical, optical, and nano-mechanical properties. Introduction of nitrogen and increase of self bias enhanced the conductivity of a-C:H and a-C:N:H films, whereas current-voltage measurement reveals heterojunction formation due to their rectifying behavior. The bandgap of these films was changed over wide range from 1.9 eV to 3.45 eV by varying self bias and the nitrogen incorporation. Further, activation energy was correlated with the electronic structure of a-C:H and a-C:N:H films, and conductivity was discussed as a function of bandgap. Moreover, a-C:N:H films exhibited high hardness and elastic modulus, with maximum values as 42 GPa and 430 GPa, respectively, at -100 V. Observed fascinating electrical, optical, and nano-mechanical properties made it a material of great utility in the development of optoelectronic devices, such as solar cells. In addition, we also performed simulation study for an a-Si:H solar cell, considering a-C:H and C:N:H as window layers, and compared their performance with the a-Si:H solar cell having a-SiC:H as window layer. We also proposed several structures for the development of a near full-spectrum solar cell. Moreover, due to high hardness, a-C:N:H films can be used as a protective and encapsulate layer on solar cells, especially in n-i-p configuration on metal substrate. Nevertheless, a-C:H and a-C:N:H as a window layer can avoid the use of additional hard and protective coating and, hence, minimize the cost of the product.

Dwivedi, Neeraj [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India); Kumar, Sushil [Physics of Energy Harvesting Division, National Physical Laboratory (CSIR), K.S. Krishnan Road, New Delhi 110012 (India); Malik, Hitendra K. [Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016 (India)

2012-01-01T23:59:59.000Z

255

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds  

DOE Patents (OSTI)

Apparatus for forming thin-film, large area solar cells having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n-type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI.sub.2 chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (.congruent.2.5 .mu.m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the transient n-type material in the first semiconductor layer to evolve into p-type material, thereby defining a thin layer heterojunction device characterized by the absence of voids, vacancies and nodules which tend to reduce the energy conversion efficiency of the system.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1983-01-01T23:59:59.000Z

256

Influence of thin metal as a top electrode on the characteristics of P-I-N a- Si:H solar cells  

Science Conference Proceedings (OSTI)

Hydrogenated amorphous silicon (a-Si:H) p-n junction solar cells have been fabricated which utilize various metals (Cr, Cu, Al, Pd, Ag) as a top electrode. Experimental and theoretical analysis of photovolatic performance in a-Si:H solar cells as a function of resistivity, optical transmittance, and work function of thin metal films are presented. Metal work function changes the effective built-in potential of p-n junction diodes. Furthermore, a lower work function metal forms a good Ohmic contact for substrate --P/sup +/-I-N/sup +/-- electrode cells, and high work function metals improve V/sub oc/ of substrate -N-I-P cells. Typical V/sub o/c values are 760 mV with Cr--, Cu--, and Al--N-I-P--stainless steel (SS), 700 mV with Pd--N-I-P-SS, 600 mV with Pd--P-I-N-SS, and 540 mV with Cr--P-I-N-SS. J/sub sc/ is strongly dependent on transmittance and resistivity of the metal films. Fill factor is independent of the choice of a top electrode. An efficient of 2% has been obtained on a 2 cm/sup 2/ solar cell.

Han, M.; Anderson, W.A.; Lahri, R.; Coleman, J.

1981-04-01T23:59:59.000Z

257

Silicon solar cell assembly  

DOE Patents (OSTI)

A silicon solar cell assembly comprising a large, thin silicon solar cell bonded to a metal mount for use when there exists a mismatch in the thermal expansivities of the device and the mount.

Burgess, Edward L. (Albuquerque, NM); Nasby, Robert D. (Albuquerque, NM); Schueler, Donald G. (Albuquerque, NM)

1979-01-01T23:59:59.000Z

258

Design Method for Light Absorption Enhancement in Ultra-Thin Film ...  

Science Conference Proceedings (OSTI)

ultra-thin film organic solar cells (OSCs) to improve the light absorption. ... In the promising field of solar cells, organic solar cells (OSCs) are advantageous in its...

259

Properties of double-layered Ga-doped Al-zinc-oxide/titanium-doped indium-tin-oxide thin films prepared by dc magnetron sputtering applied for Si-based thin film solar cells  

Science Conference Proceedings (OSTI)

In this article, Ga-doped Al-zinc-oxide (GAZO)/titanium-doped indium-tin-oxide (ITIO) bi-layer films were deposited onto glass substrates by direct current (dc) magnetron sputtering. The bottom ITIO film, with a thickness of 200 nm, was sputtered onto the glass substrate. The ITIO film was post-annealed at 350 deg. C for 10-120 min as a seed layer. The effect of post-annealing conditions on the morphologies, electrical, and optical properties of ITIO films was investigated. A GAZO layer with a thickness of 1200 nm was continuously sputtered onto the ITIO bottom layer. The results show that the properties of the GAZO/ITIO films were strongly dependent on the post-annealed conditions. The spectral haze (T{sub diffuse}/T{sub total}) of the GAZO/ITIO bi-layer films increases upon increasing the post-annealing time. The haze and resistivity of the GAZO/ITIO bi-layer films were improved with the post-annealed process. After optimizing the deposition and annealing parameters, the GAZO/ITIO bi-layer film has an average transmittance of 83.20% at the 400-800 nm wavelengths, a maximum haze of 16%, and the lowest resistivity of 1.04 x 10{sup -3}{Omega} cm. Finally, the GAZO/ITIO bi-layer films, as a front electrode for silicon-based thin film solar cells, obtained a maximum efficiency of 7.10%. These encouraging experimental results have potential applications in GAZO/ITIO bi-layer film deposition by in-line sputtering without the wet-etching process and enable the production of highly efficient, low-cost thin film solar cells.

Wang, Chao-Chun; Wuu, Dong-Sing; Lin, Yang-Shih; Lien, Shui-Yang; Huang, Yung-Chuan; Liu, Chueh-Yang; Chen, Chia-Fu; Nautiyal, Asheesh; Lee, Shuo-Jen [Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan (China); Department of Materials Science and Engineering, MingDao University, Changhua 52345, Taiwan (China); Department of Mechanical Engineering, Yuan Ze University, Taoyuan 320, Taiwan (China)

2011-11-15T23:59:59.000Z

260

Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint  

Science Conference Proceedings (OSTI)

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures 500 mV and efficiencies > 5%.

Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

2009-06-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Trestles: a high-productivity HPC system targeted to modest-scale and gateway users  

Science Conference Proceedings (OSTI)

Trestles is a new 100TF HPC resource at SDSC designed to enhance scientific productivity for modest-scale and gateway users within the TeraGrid. This paper discusses the Trestles hardware and user environment, as well as the rationale for targeting ... Keywords: allocations, capacity computing, gateways, on-demand, scheduling

Richard L. Moore; David L. Hart; Wayne Pfeiffer; Mahidhar Tatineni; Kenneth Yoshimoto; William S. Young

2011-07-01T23:59:59.000Z

262

A history of the TeraGrid science gateway program: a personal view  

Science Conference Proceedings (OSTI)

This paper describes the NSF TeraGrid Science Gateways program, its formation, progress, lessons learned and current contributions over its seven-year life and new directions in the NSF XSEDE program. Early requirements analysis work with path-finding ... Keywords: computational science, middleware, portals, science gateways

Nancy Wilkins-Diehr

2011-11-01T23:59:59.000Z

263

Design and implementation of a portable and extensible FTP to NFS gateway  

Science Conference Proceedings (OSTI)

In this paper, we present the design and implementation of an FTP to NFS gateway. The gateway exports an "FTP file system" to NFS clients. Once this file system is mounted on a client machine, files and directories accessible through the FTP protocol ...

Deepak Gupta; Vikrant Sharma

2002-06-01T23:59:59.000Z

264

Integrating CyberGIS gateway with Windows Azure: a case study on MODFLOW groundwater simulation  

Science Conference Proceedings (OSTI)

The CyberGIS Gateway represents a cutting-edge cyberin-frastructure-based geographic information system that facilitates computationally intensive and collaborative spatial analysis and modeling. As more and more geospatial problems are becoming increasingly ... Keywords: CyberGIS, MODFLOW, Windows Azure, cloud computing, science gateway

Babak Behzad; Anand Padmanabhan; Yong Liu; Yan Liu; Shaowen Wang

2011-11-01T23:59:59.000Z

265

Available Technologies: Thinner Film Silicon Solar Cells  

Berkeley Lab scientists have designed a new approach to create highly efficient thin film silicon solar cells. This technology promises to lower solar cell material ...

266

EE580 Solar Cells Todd J. Kaiser  

E-Print Network (OSTI)

7/21/2010 1 EE580 ­ Solar Cells Todd J. Kaiser · Lecture 06 · Solar Cell Materials & Structures 1Montana State University: Solar Cells Lecture 6: Solar Cells Solar Cell Technologies · A) Crystalline Silicon · B) Thin Film · C) Group III-IV Cells 2Montana State University: Solar Cells Lecture 6: Solar

Kaiser, Todd J.

267

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells  

DOE Patents (OSTI)

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Ramanathan, Kannan V. (Lakewood, CA); Contreras, Miguel A. (Golden, CA); Bhattacharya, Raghu N. (Littleton, CA); Keane, James (Lakewood, CA); Noufi, Rommel (Golden, CA)

1999-01-01T23:59:59.000Z

268

OpenEI:OldGeoGateway | Open Energy Information  

Open Energy Info (EERE)

Project page Project page Edit History Facebook icon Twitter icon » OpenEI:OldGeoGateway Jump to: navigation, search GEOTHERMAL ENERGYGeothermal Home Print PDF Geothermalpower.jpg GeoInfo.png Geothermal Information Geothermal Energy Overview Types of Geothermal Resources Energy Conversion Technologies Cooling Technologies Exploration Techniques Reference Materials GeoModels.png Geothermal Models & Tools GETEM SAM Geothermal Prospector Exploration Cost and Time Metric Georesource.png Resource Assessments USGS Maps (2008) Geothermal Resource Potential Map Geothermal Areas Geothermal Regions Installed.png Installed & Planned Capacity Geothermal Generation Installed Capacity Planned Capacity Geofinancing.png Geothermal Financing Developers' Financing Handbook RE Project Finance CREST

269

DP9: An OAI Gateway Service for Web Crawlers  

E-Print Network (OSTI)

Many libraries and databases are closed to general-purpose Web crawlers, and they expose their content only through their own search engines. At the same time many researchers attempt to locate technical papers through general-purpose Web search engines. DP9 is an open source gateway service that allows general search engines, (e.g. Google, Inktomi) to index OAI-compliant archives. DP9 does this by providing consistent URLs for repository records, and converting them to OAI queries against the appropriate repository when the URL is requested. This allows search engines that do not support the OAI protocol to index the "deep Web" contained within OAI compliant repositories.

Xiaoming Liu; Kurt Maly; Mohammad Zubair; Michael L. Nelson

2002-01-01T23:59:59.000Z

270

V-153: Symantec Brightmail Gateway Input Validation Flaw Permits Cross-Site  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3: Symantec Brightmail Gateway Input Validation Flaw Permits 3: Symantec Brightmail Gateway Input Validation Flaw Permits Cross-Site Scripting Attacks V-153: Symantec Brightmail Gateway Input Validation Flaw Permits Cross-Site Scripting Attacks May 10, 2013 - 6:00am Addthis PROBLEM: A vulnerability was reported in Symantec Brightmail Gateway PLATFORM: The vulnerabilities are reported in versions prior to 9.5.x ABSTRACT: Symantec's Brightmail Gateway management console is susceptible to stored cross-site scripting (XSS) issues found in some of the administrative interface pages. REFERENCE LINKS: Security Tracker Alert ID: 1028530 Symantec Security Advisory CVE-2013-1611 IMPACT ASSESSMENT: Medium DISCUSSION: The administrative interface does not properly filter HTML code from user-supplied input before displaying the input. A remote user can cause

271

Improved Transparent Conducting Oxides Boost Performance of Thin...  

NLE Websites -- All DOE Office Websites (Extended Search)

to electricity in solar cells by absorbing light within a specific wavelength. Today's thin-film solar cells could not function without transparent conducting oxides (TCOs)....

272

Research on polycrystalline thin-film CuInGaSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--21 May 1993  

DOE Green Energy (OSTI)

This report describes work to fabricate high-efficiency CdZnS/CuInGaSe{sub 2}, thin-film solar cells and to develop improved transparent conductor window layers such as ZnO. The specific technical milestone for Phase I was to demonstrate an air mass (AM) 1.5 global 13% , 1-cm{sup 2} total-area CuInGaSe{sub 2} (CIGS) thin-film solar cell. For Phase II, the objective was to demonstrate an AM1.5 global 13.5%, 1-cm{sup 2} total-area efficiency. We focused our activities on three areas. First, we modified the CIGS deposition system to double its substrate capacity. Second, we developed new tooling to enable investigation of a modified aqueous CdZnS process in which the goal was to improve the yield of this critical step in the device fabrication process. Third, we upgraded the ZnO sputtering system to improve its reliability and reproducibility. A dual rotatable cathode metallic source was installed, and the sputtering parameters were further optimized to improve ZnO`s properties as a transparent conducting oxide (TCO). Combining the refined CdZnS process with CIGS from the newly fixtured deposition system enable us to fabricate and deliver a ZnO/Cd{sub 0.08}Zn{sub 0.20}S/CuIn{sub 0.74}Ga{sub 0.26}Se{sub 2} cell on alumina with I-V characteristics, as measured by NREL under standard test conditions, of 13.7% efficiency with V{proportional_to} = 0.5458 V, J{sub sc} = 35.48 mA/cm{sup 2}, FF = 0.688, and efficiency = 14.6%.

Chen, W.S.; Stewart, J.M.; Mickelsen, R.A.; Devaney, W.E.; Stanbery, B.J. [Boeing Co., Seattle, WA (United States). Defense and Space Systems Group

1993-10-01T23:59:59.000Z

273

Research on polycrystalline thin-film CuGaInSe{sub 2} solar cells. Annual subcontract report, 3 May 1991--2 May 1992  

DOE Green Energy (OSTI)

This report describes research to fabricate high-efficiency CdZnS/CuInGaSe{sub 2} (CIGS) thin-film solar cells, and to develop improved transparent conductor window layers such as ZnO. A specific technical milestone was the demonstration of an air mass (AM) 1.5 global, 13% efficient, 1-cm{sup 2}-total-area CIGS thin-film solar cell. Our activities focused on three areas. First, a CIGS deposition: system was modified to double its substrate capacity, thus increasing throughput, which is critical to speeding the process development by providing multiple substrates from the same CIGS run. Second, new tooling was developed to enable an investigation of a modified aqueous CdZnS process. The goal was to improve the yield of this critical step in the device fabrication process. Third, our ZnO sputtering system was upgraded to improve its reliability, and the sputtering parameters were further optimized to improve its properties as a transparent conducting oxide. The characterization of the new CIGS deposition system substrate fixturing was completed, and we produced good thermal uniformity and adequately high temperatures for device-quality CIGS deposition. Both the CIGS and ZnO deposition processes were refined to yield a ZnO//Cd{sub 0.82}Zn{sub 0.18}S/CuIn{sub 0.80}Ga{sub 0.20}Se{sub 2} cell that was verified at NREL under standard testing conditions at 13.1% efficiency with V{sub oc} = 0.581 V, J{sub sc} = 34.8 mA/cm{sup 2}, FF = 0.728, and a cell area of 0.979 cm{sup 2}.

Stanbery, B.J.; Chen, W.S.; Devaney, W.E.; Stewart, J.W. [Boeing Co., Seattle, WA (United States). Defense and Space Systems Group

1992-11-01T23:59:59.000Z

274

RE: Northeast Gateway Deepwater Port Project Incidental Harassment Authorization Request  

E-Print Network (OSTI)

submits this request in accordance with 50 CFR 216.104 for Incidental Harassment Authorizations (IHAs) for the taking of small numbers of marine mammals incidental to the proposed action described herein or to make a finding that incidental take is unlikely to occur. On May 14, 2007 Maritime Administration (MARAD) issued a License to Northeast Gateway to own, construct, and operate a Deepwater Port for the import and regasification of LNG located approximately 13 miles (21 kilometers) offshore of Gloucester, Massachusetts in federal waters approximately 270 to 290 feet (82 to 88 meters) in depth. This facility will deliver regasified LNG to onshore markets via new and existing pipeline facilities owned and operated by Algonquin Gas Transmission Company (Algonquin). Construction of the Port was completed in December of 2007 and the Port was commissioned for operation by the USCG in February 2008. In October 2006, Northeast Gateway submitted its original application to the National Oceanic Atmospheric Administration (NOAA) National Marine Fisheries Service (NMFS) for an IHA. The

Shane Guan; Dear Mr. Guan

2008-01-01T23:59:59.000Z

275

Optimization of Processing and Modeling Issues for Thin-Film Solar Cell Devices; Annual Report, 3 February 1997-2 February 1998  

DOE Green Energy (OSTI)

This report describes results achieved during phase I of a four-phase subcontract to develop and understand thin-film solar cell technology associated with CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Hegedus, S. S.; McCandless, B. E. (IEC, University of Delaware)

1998-12-08T23:59:59.000Z

276

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices: Final Report, 24 August 1998-23 October 2001  

DOE Green Energy (OSTI)

This report describes results achieved during a three-year subcontract to develop and understand thin-film solar cell technology associated to CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for the development of viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient and with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.; Aparicio, R.; Dobson, K.

2003-01-01T23:59:59.000Z

277

Public release of optimization of metallization scheme for thin emitter wrap-through solar cells for higher efficiency, reduced precious metal costs, and reduced stress.  

DOE Green Energy (OSTI)

Back-contact crystalline-silicon photovoltaic solar cells and modules offer a number of advantages, including the elimination of grid shadowing losses, reduced cost through use of thinner silicon substrates, simpler module assembly, and improved aesthetics. While the existing edge tab method for interconnecting and stringing edge-connected back contact cells is acceptably straightforward and reliable, there are further gains to be exploited when you have both contact polarities on one side of the cell. In this work, we produce 'busbarless' emitter wrap-through solar cells that use 41% of the gridline silver (Ag) metallization mass compared to the edge tab design. Further, series resistance power losses are reduced by extraction of current from more places on the cell rear, leading to a fill factor improvement of about 6% (relative) on the module level. Series resistance and current-generation losses associated with large rear bondpads and busbars are eliminated. Use of thin silicon (Si) wafers is enabled because of the reduced Ag metallization mass and by interconnection with conductive adhesives leading to reduced bow. The busbarless cell design interconnected with conductive adhesives passes typical International Electrotechnical Commission damp heat and thermal cycling test.

Ruby, Douglas Scott; Murphy, Brian (Advent Solar, Inc., Albuquerque, NM); Meakin, David (Advent Solar, Inc., Albuquerque, NM); Dominguez, Jason (Advent Solar, Inc., Albuquerque, NM); Hacke, Peter (Advent Solar, Inc., Albuquerque, NM)

2008-08-01T23:59:59.000Z

278

Physical models of thin film polycrystalline solar cells based on measured grain-boundary and electronic-parameter properties. Quarterly report  

DOE Green Energy (OSTI)

Solar cells fabricated on polycrystalline silicon, either bulk or thin-film, can potentially be cost-effective when used in terrestrial photovoltaic energy-conversion systems. To achieve this goal, the polysilicon cell efficiency must be increased considerably from its present values. A severe limitation to the cell efficiency is due to the grain boundaries and their influence on carrier recombination. To remove this limitation, an understanding of the fundamental physics underlying the effects of the grain boundaries on cell performance is helpful. This fundamental physics is discussed, and models are developed for recombination currents in polysilicon pn-junction solar cells. Several analytic approximations, suggested by physical insight, are used and checked ultimately for self-consistency with the results of the analysis. The models are defined such that their parameters can be related directly to measurements, and the models are hence useful in interpreting experimental results. They also can be used to study, in a systematic way, cell-design modifications to improve the efficiency, e.g., grain-boundary passivation techniques.

Lindholm, F.A.; Fossum, J.G.; Holloway, P.A.; Neugroschel, A.

1979-12-01T23:59:59.000Z

279

Epitaxial Thin Film Silicon Solar Cells Fabricated by Hot Wire Chemical Vapor Deposition Below 750 ..deg..C: Preprint  

SciTech Connect

We report on fabricating film c-Si solar cells on Si wafer templates by hot-wire chemical vapor deposition. These devices, grown at glass-compatible temperatures < 750..deg..C, demonstrate open-circuit voltages > 500 mV and efficiencies > 5%.

Alberi, K.; Martin, I. T.; Shub, M.; Teplin, C. W.; Iwaniczko, E.; Xu, Y.; duda, A.; Stradin, P.; Johnston, S. W.; Romero, M. J.; Branz, H. M.; Young, D. L.

2009-06-01T23:59:59.000Z

280

Thin film gallium arsenide solar cell research. Third quarterly project report, September 1, 1980-November 30, 1980. [Antireflection coating  

DOE Green Energy (OSTI)

The major objective of this contract is to produce gallium arsenide solar cells of 10% conversion efficiency in films of less than 10 micrometers thick which have been deposited by chemical vapor deposition on graphite or tungsten coated graphite substrates. Major efforts during this quarter were directed to: (1) the optimization of the deposition of gallium arsenide films of 10 ..mu..m thickness or less on tungsten/graphic substrates, (2) the investigation of the effectiveness of various grain boundary passivation techniques, (3) the deposition of tantalum pentoxide by ion beam sputtering as an antireflection coating, (4) the deposition of gallium aluminium arsenide by the organometallic process, and (5) the fabrication and characterization of large area Schottky barrier type solar cells from gallium arsenide films of about 10 ..mu..m thickness. Various grain boundary passivation techniques, such as the anodic oxidation, thermal oxidation, and ruthenium treatment, have been investigated. The combination of thermal oxidation and ruthenium treatment has been used to fabricate Schottky barrier type solar cells. Large area MOS solar cells of 9 cm/sup 2/ area with AMl efficiency of 8.5% have been fabricated from ruthenium treated gallium arsenide films of 10 ..mu..m thickness. The construction of the apparatus for the deposition of gallium aluminum arsenide by the organometallic process has been completed. The deposition of good quality tantalum pentoxide film as an antireflection coating has been carried out by the ion beam sputtering technique. The short-circuit current density and AMl efficiency of the solar cells are increased by approximately 60%, with a slight increase in the open-circuit voltage. Details are presented. (WHK)

Chu, S. S.

1980-12-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Photovoltaic mechanisms in polycrystalline thin film silicon solar cells. Final report, 30 June 1979-29 June 1980  

DOE Green Energy (OSTI)

The objectives of this program were: (1) to develop appropriate measurement techniques to facilitate a quantitative study of the electrical activity of structural defects and at a grain boundary (G.B.) in terms of generation-recombination, barrier height, and G.B. conductivity; (2) to characterize G.B.s in terms of physical properties such as angle of misfit and local stress, and to correlate them with the electrical activity; (3) to determine the influence of solar cell processing on the electrical behavior of structural defects and G.B.s; and (4) to evaluate polycrystalline solar cell performance based on the above study, and to compare it with the experimentally measured performance. Progress is reported in detail. (WHK)

Sopori, B.L.

1980-11-01T23:59:59.000Z

282

Correlations of Capacitance-Voltage Hysteresis with Thin-Film CdTe Solar Cell Performance During Accelerated Lifetime Testing  

SciTech Connect

In this paper we present the correlation of CdTe solar cell performance with capacitance-voltage hysteresis, defined presently as the difference in capacitance measured at zero-volt bias when collecting such data with different pre-measurement bias conditions. These correlations were obtained on CdTe cells stressed under conditions of 1-sun illumination, open-circuit bias, and an acceleration temperature of approximately 100 degrees C.

Albin, D.; del Cueto, J.

2011-03-01T23:59:59.000Z

283

International Clean Energy Analysis Gateway: Assisting Developing Countries with Clean Energy Deployment (Fact Sheet)  

SciTech Connect

The International Clean Energy Analysis Gateway seeks to enhance developing country access to energy efficiency and renewable energy analysis tools, databases, methods, and other technical resources in a dynamic user interaction environment. In addition to providing information on available tools, the gateway also is a platform for Web seminars, online training, peer networks, and expert assistance. The gateway is sponsored by the U.S. Department of Energy (DOE) and the United Nations Industrial Development Organization (UNIDO) and managed by the National Renewable Energy Laboratory (NREL). Further cooperation is desired with organizations that can help expand the information presented in the portal and assist with outreach and training.

2010-01-01T23:59:59.000Z

284

Gateway:Low Emission Development Strategies | Open Energy Information  

Open Energy Info (EERE)

Low Emission Development Strategies Low Emission Development Strategies (Redirected from LEDS) Jump to: navigation, search Leds-Graphics 03.PNG Low Emission Development Strategies (LEDS) Gateway This website supports the creation and implementation of country-driven, analytically rigorous low emission development strategies (LEDS). LEDS will enable countries to transition to low carbon economic development resulting in sustained growth in employment and investment, increased financial flows through carbon markets, reduced greenhouse gas (GHG) emissions, and other social, economic, and environmental benefits. The resources here are designed to help you create your own LEDS. We've assembled several toolkits and resources and a sample process for developing a LEDS based on proven best practices. The process is depicted in the diagram to your left, which also lets you navigate through the site. Start with the overview of the LEDS process, or go directly to one of the five major process phases:

285

Gateway:Low Emission Development Strategies | Open Energy Information  

Open Energy Info (EERE)

Low Emission Development Strategies Low Emission Development Strategies (Redirected from Low Emission Development Strategies) Jump to: navigation, search Leds-Graphics 03.PNG Low Emission Development Strategies (LEDS) Gateway This website supports the creation and implementation of country-driven, analytically rigorous low emission development strategies (LEDS). LEDS will enable countries to transition to low carbon economic development resulting in sustained growth in employment and investment, increased financial flows through carbon markets, reduced greenhouse gas (GHG) emissions, and other social, economic, and environmental benefits. The resources here are designed to help you create your own LEDS. We've assembled several toolkits and resources and a sample process for developing a LEDS based on proven best practices. The process is depicted in the diagram to your left, which also lets you navigate through the site. Start with the overview of the LEDS process, or go directly to one of the five major process phases:

286

ECOWAS Clean Energy Gateway-News | Open Energy Information  

Open Energy Info (EERE)

News News Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo Regional News Renewable Energy News Today-West Africa Renewable Energy News Failed to load RSS feed from http://renewableenergy.einnews.com/xml/west-africa/: Error fetching URL: Operation timed out after 5000 milliseconds with 0 bytes received

287

Gateway:Low Emission Development Strategies | Open Energy Information  

Open Energy Info (EERE)

Low Emission Development Strategies Low Emission Development Strategies (Redirected from LEDS Pathways Analysis) Jump to: navigation, search Leds-Graphics 03.PNG Low Emission Development Strategies (LEDS) Gateway This website supports the creation and implementation of country-driven, analytically rigorous low emission development strategies (LEDS). LEDS will enable countries to transition to low carbon economic development resulting in sustained growth in employment and investment, increased financial flows through carbon markets, reduced greenhouse gas (GHG) emissions, and other social, economic, and environmental benefits. The resources here are designed to help you create your own LEDS. We've assembled several toolkits and resources and a sample process for developing a LEDS based on proven best practices. The process is depicted in the diagram to your left, which also lets you navigate through the site. Start with the overview of the LEDS process, or go directly to one of the five major process phases:

288

Value Proposition for High Lifetime (p-type) and Thin Silicon Materials in Solar PV Applications: Preprint  

DOE Green Energy (OSTI)

Most silicon PV road maps forecast a continued reduction in wafer thickness, despite rapid declines in the primary incentive for doing so -- polysilicon feedstock price. Another common feature of most silicon-technology forecasts is the quest for ever-higher device performance at the lowest possible costs. The authors present data from device-performance and manufacturing- and system-installation cost models to quantitatively establish the incentives for manufacturers to pursue advanced (thin) wafer and (high efficiency) cell technologies, in an age of reduced feedstock prices. This analysis exhaustively considers the value proposition for high lifetime (p-type) silicon materials across the entire c-Si PV supply chain.

Goodrich, A.; Woodhouse, M.; Hacke, P.

2012-06-01T23:59:59.000Z

289

Method of fabricating high-efficiency Cu(In,Ga)(Se,S){sub 2} thin films for solar cells  

DOE Patents (OSTI)

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S){sub 2} comprises depositing a first layer of (In,Ga){sub x} (Se,S){sub y} followed by depositing just enough Cu+(Se,S) or Cu{sub x} (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga){sub x} (Se,S){sub y} is deposited first, followed by deposition of all the Cu+(Se,S) or Cu{sub x} (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga){sub x} (Se,S){sub y} is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu{sub x} (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga){sub x} (Se,S){sub y} to go slightly Cu-poor in the final Cu(In,Ga)(Se,S){sub 2} thin film. 5 figs.

Noufi, R.; Gabor, A.M.; Tuttle, J.R.; Tennant, A.L.; Contreras, M.A.; Albin, D.S.; Carapella, J.J.

1995-08-15T23:59:59.000Z

290

Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells  

DOE Patents (OSTI)

A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.

Noufi, Rommel (Golden, CO); Gabor, Andrew M. (Boulder, CO); Tuttle, John R. (Denver, CO); Tennant, Andrew L. (Denver, CO); Contreras, Miguel A. (Golden, CO); Albin, David S. (Denver, CO); Carapella, Jeffrey J. (Evergreen, CO)

1995-01-01T23:59:59.000Z

291

Formosun Solar Corp | Open Energy Information  

Open Energy Info (EERE)

Corp. Place Hsinchu County, Taiwan Zip 303-51 Sector Solar Product Thin-film solar cell producer based in Taiwan. References Formosun Solar Corp.1 LinkedIn Connections...

292

AOS Solar Inc | Open Energy Information  

Open Energy Info (EERE)

AOS Solar Inc Jump to: navigation, search Name AOS Solar Inc Product Manufacturer of thin-film silicon-on-glass. References AOS Solar Inc1 LinkedIn Connections CrunchBase...

293

AxunTek Solar Energy | Open Energy Information  

Open Energy Info (EERE)

AxunTek Solar Energy Jump to: navigation, search Name AxunTek Solar Energy Place Taiwan Sector Solar Product Taiwan-based CIGS thin film solar cell producer. References AxunTek...

294

Closing the gateways of democracy : cities and the militarization of protest policing  

E-Print Network (OSTI)

In the era of globalization, cities function as 'gateways of democracy,' the spaces and places where the civil society literally 'marches through' in order to deliver oppositional claims into the global arena. However, ...

Golan, Gan

2005-01-01T23:59:59.000Z

295

T-663: Cisco Content Services Gateway ICMP Processing Flaw Lets Remote  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

3: Cisco Content Services Gateway ICMP Processing Flaw Lets 3: Cisco Content Services Gateway ICMP Processing Flaw Lets Remote Users Deny Service T-663: Cisco Content Services Gateway ICMP Processing Flaw Lets Remote Users Deny Service July 7, 2011 - 12:41pm Addthis PROBLEM: A denial of service (DoS) vulnerability exists in the Cisco Content Services Gateway - Second Generation, that runs on the Cisco Service and Application Module for IP (SAMI). An unauthenticated, remote attacker could exploit this vulnerability by sending a series of crafted ICMP packets to an affected device. Exploitation could cause the device to reload. There are no workarounds available to mitigate exploitation of this vulnerability other than blocking ICMP traffic destined to the affected device. PLATFORM: Second Generation only Cisco IOS 12.4(24)MDA3,Cisco IOS 12.4(24)MDA3,Cisco

296

Price of Gulf Gateway Natural Gas LNG Imports from Qatar (Dollars...  

Annual Energy Outlook 2012 (EIA)

Qatar (Dollars per Thousand Cubic Feet) Price of Gulf Gateway Natural Gas LNG Imports from Qatar (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1 Year-2 Year-3 Year-4 Year-5...

297

Price of Gulf Gateway Natural Gas LNG Imports from Trinidad and...  

Annual Energy Outlook 2012 (EIA)

Trinidad and Tobago (Dollars per Thousand Cubic Feet) Price of Gulf Gateway Natural Gas LNG Imports from Trinidad and Tobago (Dollars per Thousand Cubic Feet) Decade Year-0 Year-1...

298

Manufacturing recovery : a networked approach to green job creation in Massachusetts Gateway cities  

E-Print Network (OSTI)

In this thesis, I compare workforce development planning in Lawrence and Lowell, Massachusetts, two of the state's older industrial "Gateway" cities. I specifically examine local planning processes around job creation in ...

Leavy-Sperounis, Marianna (Marianna Breakstone)

2010-01-01T23:59:59.000Z

299

Thin Film Photovoltaics - Programmaster.org  

Science Conference Proceedings (OSTI)

Thin Film Structures for Energy Efficient Systems: Thin Film Photovoltaics ... Full- inorganic Heterojunction Ink-printed Solar Cells: Seigo Ito1; 1University of Hyogo ... electrochemical impedance spectroscopy (EIS) measurements were used for...

300

U-244: McAfee Email Gateway Lets Remote Users Bypass Authentication and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

4: McAfee Email Gateway Lets Remote Users Bypass Authentication 4: McAfee Email Gateway Lets Remote Users Bypass Authentication and Conduct Cross-Site Scripting and Directory Traversal Attacks U-244: McAfee Email Gateway Lets Remote Users Bypass Authentication and Conduct Cross-Site Scripting and Directory Traversal Attacks August 27, 2012 - 7:00am Addthis PROBLEM: McAfee Email Gateway Lets Remote Users Bypass Authentication and Conduct Cross-Site Scripting and Directory Traversal Attacks PLATFORM: McAfee Email Gateway (MEG) 7.0.0 and 7.0.1 (MEG 6.7.x is NOT affected.) McAfee Email and Web Security (EWS) 5.6 Patch 3 and earlier McAfee Email and Web Security (EWS) 5.5 Patch 6 and earlier ABSTRACT: Several vulnerabilities were reported in McAfee Email Gateway. reference LINKS: McAfee Security Bulletin ID: SB10026 SecurityTracker Alert ID: 1027444

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301

U-244: McAfee Email Gateway Lets Remote Users Bypass Authentication and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

44: McAfee Email Gateway Lets Remote Users Bypass Authentication 44: McAfee Email Gateway Lets Remote Users Bypass Authentication and Conduct Cross-Site Scripting and Directory Traversal Attacks U-244: McAfee Email Gateway Lets Remote Users Bypass Authentication and Conduct Cross-Site Scripting and Directory Traversal Attacks August 27, 2012 - 7:00am Addthis PROBLEM: McAfee Email Gateway Lets Remote Users Bypass Authentication and Conduct Cross-Site Scripting and Directory Traversal Attacks PLATFORM: McAfee Email Gateway (MEG) 7.0.0 and 7.0.1 (MEG 6.7.x is NOT affected.) McAfee Email and Web Security (EWS) 5.6 Patch 3 and earlier McAfee Email and Web Security (EWS) 5.5 Patch 6 and earlier ABSTRACT: Several vulnerabilities were reported in McAfee Email Gateway. reference LINKS: McAfee Security Bulletin ID: SB10026 SecurityTracker Alert ID: 1027444

302

Thin Film Structures for Energy Efficient Systems  

Science Conference Proceedings (OSTI)

Thin film based energy generation and storage devices - Small scale ... Dye- sensitized Solar Cells with Anodized Aluminum Alloy-based Counter-electrodes.

303

High efficiency thin film CdTe solar cells. Second quarterly progress report, June 19-September 18, 1979  

DOE Green Energy (OSTI)

During the second quarter of this program primary emphasis was put into depositing and evaluating both n and p-type CdTe films on a variety of conducting and non-conducting substrates. Improvements in the deposition apparatus permitted preparation of a large number of CdTe films and numerous analytic techniques available at Tufts University were utilized to examine these films. It was found that the introduction of a thin (100 A). In layer between the ITO and the CdTe significantly reduced the previously observed barrier present at the ITO/n-CdTe interface without adversely reducing optical transmission. While the resistivity of the films is still rather high, very recent results show that proper changes in procedure are capable of markedly lowering the resistivity. Preliminary Schottky barrier devices have been made which show promising photovoltaic characteristics.

Serreze, H.B.; Entine, G.; Goldner, R.B.

1979-10-01T23:59:59.000Z

304

Sputtered Nickel Oxide Thin Film for Efficient Hole Transport Layer in Polymer-Fullerene Bulk-Heterojunction Organic Solar Cell  

SciTech Connect

Bulk-heterojunction (BHJ) organic photovoltaics (OPV) are very promising thin film renewable energy conversion technologies due to low production cost by high-throughput roll-to-roll manufacturing, an expansive list of compatible materials, and flexible device fabrication. An important aspect of OPV device efficiency is good contact engineering. The use of oxide thin films for this application offers increased design flexibility and improved chemical stability. Here we present our investigation of radio frequency magnetron sputtered nickel oxide (NiO{sub x}) deposited from oxide targets as an efficient, easily scalable hole transport layer (HTL) with variable work-function, ranging from 4.8 to 5.8 eV. Differences in HTL work-function were not found to result in statistically significant changes in open circuit voltage (V{sub oc}) for poly(3-hexylthiophene):[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (P3HT:PCBM) BHJ device. Ultraviolet photoemission spectroscopy (UPS) characterization of the NiO{sub x} film and its interface with the polymer shows Fermi level alignment of the polymer with the NiO{sub x} film. UPS of the blend also demonstrates Fermi level alignment of the organic active layer with the HTL, consistent with the lack of correlation between V{sub oc} and HTL work-function. Instead, trends in j{sub sc}, V{sub oc}, and thus overall device performance are related to the surface treatment of the HTL prior to active layer deposition through changes in active layer thickness.

Widjonarko, N. E.; Ratcliff, E. L.; Perkins, C. L.; Sigdel, A. K.; Zakutayev, A.; Ndione, P. F.; Gillaspie, D. T.; Ginley, D. S.; Olson, D. C.; Berry, J. J.

2012-03-01T23:59:59.000Z

305

Use of 2nd and 3rd Level Correlation Analysis for Studying Degradation in Polycrystalline Thin-Film Solar Cells  

DOE Green Energy (OSTI)

The correlation of stress-induced changes in the performance of laboratory-made CdTe solar cells with various 2nd and 3rd level metrics is discussed. The overall behavior of aggregated data showing how cell efficiency changes as a function of open-circuit voltage (Voc), short-circuit current density (Jsc), and fill factor (FF) is explained using a two-diode, PSpice model in which degradation is simulated by systematically changing model parameters. FF shows the highest correlation with performance during stress, and is subsequently shown to be most affected by shunt resistance, recombination and in some cases voltage-dependent collection. Large decreases in Jsc as well as increasing rates of Voc degradation are related to voltage-dependent collection effects and catastrophic shunting respectively. Large decreases in Voc in the absence of catastrophic shunting are attributed to increased recombination. The relevance of capacitance-derived data correlated with both Voc and FF is discussed.

Albin, D. S.; del Cueto, J. A.; Demtsu, S. H.; Bansal, S.

2011-03-01T23:59:59.000Z

306

Molecular beam epitaxy-grown wurtzite MgS thin films for solar-blind ultra-violet detection  

SciTech Connect

Molecular beam epitaxy grown MgS on GaAs(111)B substrate was resulted in wurtzite phase, as demonstrated by detailed structural characterizations. Phenomenological arguments were used to account for why wurtzite phase is preferred over zincblende phase or its most stable rocksalt phase. Results of photoresponse and reflectance measurements performed on wurtzite MgS photodiodes suggest a direct bandgap at around 5.1 eV. Their response peaks at 245 nm with quantum efficiency of 9.9% and enjoys rejection of more than three orders at 320 nm and close to five orders at longer wavelengths, proving the photodiodes highly competitive in solar-blind ultraviolet detection.

Lai, Y. H.; He, Q. L. [Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China) [Nano Science and Nano Technology Program, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China); Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China); Cheung, W. Y.; Lok, S. K.; Wong, K. S.; Sou, I. K. [Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China)] [Department of Physics and William Mong Institute of Nano Science and Technology, The Hong Kong University of Science and Technology, HKSAR, People's Republic of China (China); Ho, S. K. [Faculty of Science and Technology, University of Macau, Macau, People's Republic of China (China)] [Faculty of Science and Technology, University of Macau, Macau, People's Republic of China (China); Tam, K. W. [Department of Electrical and Electronics Engineering, University of Macau, Macau, People's Republic of China (China)] [Department of Electrical and Electronics Engineering, University of Macau, Macau, People's Republic of China (China)

2013-04-29T23:59:59.000Z

307

Amelio Solar | Open Energy Information  

Open Energy Info (EERE)

low-cost, thin-film photovoltaic module technology, related product manufacturing and power-generation systems. References Amelio Solar1 LinkedIn Connections CrunchBase...

308

Research on high-efficiency, single-junction, monolithic, thin-film amorphous silicon solar cells: Phase II annual subcontract report, 1 January 1985--31 January 1986  

DOE Green Energy (OSTI)

This report presents results of the second phase of research on high-efficiency, single-junction, monolithic, thin-film a-Si solar cells. Five glow-discharge deposition systems, including a new in-line, multichamber system, were used to grow both doped and undoped a-Si:H. A large number of silane and disilane gas cylinders were analyzed with a gas chromatography/mass spectroscopy system. Strong correlations were found between the breakdown voltage, the deposition rate, the diffusion length, and the conversion efficiency for varying cathode-anode separations in a DC glow-discharge deposition mode. Tin oxide films were grown by chemical vapor deposition with either tetramethyl tin (TMT) or tin tetrachloride (TTC). The best were grown with TMT, but TTC films had a more controlled texture for light trapping and provided a better contact to the p-layer. The best results were obtained with 7059 glass substrates. Efficiencies as high as 10.86% were obtained in p-i-n cells with superlattice p-layers and as high as 10.74% in cells with both superlattice p- and n-layers. Measurements showed that the boron-doping level in the p-layer can strongly affect transport in the i-layer, which can be minimized by reactive flushing before i-layer deposition. Stability of a-Si:H cells is improved by light doping. 51 refs., 64 figs., 21 tabs.

Carlson, D.E.; Ayra, R.R.; Bennett, M.S.; Catalano, A.; D'Aiello, R.V.; Dickson, C.R.; McVeigh, J.; Newton, J.; O'Dowd, J.; Oswald, R.S.; Rajan, K.

1988-09-01T23:59:59.000Z

309

Structure of All-Polymer Solar Cells Impedes Efficiency  

NLE Websites -- All DOE Office Websites (Extended Search)

Structure of All-Polymer Solar Cells Impedes Efficiency Print Organic solar cells are made of thin layers of interpenetrating structures from two different conducting organic...

310

Amorphous thin films for solar-cell applications. Technical progress report, 11 October 1980 to 15 January 1981  

DOE Green Energy (OSTI)

Progress has been ahead of planned expectations in three instances: (a) achievement of 4 mA/cm/sup 2/, short circuit current density in a MIS structure solar cell under AM1 illumination; (b) fabrication of large area (4 cm/sup 2/) MIS cells with external J/sub sc/ > 3 mA/cm/sup 2/; and (c) deposition of p/sup +/ layers by B/sub 2/H/sub 6/ gas phase doping. A program status table is included. Reproducible n layers are now routinely deposited by sputtering in Ar, H/sub 2/, and PH/sub 3/ gases. The major remaining obstacle to the goal of a 3.5% cell is the deposition of a quality i-layer. Although information deduced from infrared absorption and Raman data indicates that most of the hydrogen is bonded in the SiH configuration, the photoconductivity of the intrinsic material requires marked improvement. Two forms of magnetron sputtering, planar and cylindrical, are being exploited. The planar deposition system has the advantage that experimental costs are low; the cylindrical system is easily scalable to large product throughput. Schematic illustrations of the two systems and descriptions of apparatus modifications incorporated are included.

Jonath, A.D.; Anderson, W.W.; Crowley, J.L.; MacMillan H.F. Jr.; Thornton, J.A.

1981-02-20T23:59:59.000Z

311

Photovoltaic mechanisms in polycrystalline thin film solar cells. Quarterly technical progress report No. 2, January 1, 1979--March 31, 1979  

DOE Green Energy (OSTI)

The effect of grain size on short circuit current density was investigated by approximating individual silicon grains as right circular cylinders and solving the diffusion equation within the base region. This model confirms the previous results that for grain radii exceeding a few tenths of a millimeter, the minority carrier lifetime in the grain essentially determines the short-circuit current response of the cell. The dark I-V characteristics of some polycrystalline solar cells were measured and compared with single crystal cells. The dark current of the polycrystalline cells is dominated by recombination within the space-charge region well past the one sun maximum power point. This has the effect of lowering the cells output power and open circuit voltage. Single crystal cells are dominated by recombination within the quasi-neutral regions at the one sun maximum power point and, consequently, the fill factor and open circuit voltage are greater. Additionally, some preliminary measurements of the spatial dependence of diffusion length were made, Laue X-ray diffraction study of crystal orientations was performed and some SEM micrographs of polycrystalline wafers were taken.

Storti, G.; Johnson, S.; Lin, H.C.; Armstrong, R.W.

1979-01-01T23:59:59.000Z

312

Indium phosphide/cadmium sulfide thin-film solar cells. Final report, May 1979 through July 1980  

DOE Green Energy (OSTI)

Thin-film InP/RXCdS/ITO/GLASS devices were prepared by depositing ITO on low-cost glass substrate, depositing CdS on the ITO by thermal evaporation, increasing the CdS lateral grain size by recrystallization, and depositing p-type InP by planar reactive deposition (PRD) on the recrystallized CdS (RXCdS). Yields of the RXCdS/ITO/GLASS substrates were increased to 90% with lateral dimensions of the RXCdS grains as large as 0.3 mm. P-type InP layers were obtained with Be doping. S-doping via vapor transport from the CdS was eliminated by capping the entire RXCdS substrate with InP. For InP deposited on RXCdS at 380/sup 0/C, devices showed blocking action with a barrier height of about 0.5 V but no light response, possibly due to an intermediate approx. 3-..mu..m-thick n-InP layer from diffusion of S from the RXCdS. These results were achieved despite poor InP epitaxy due to an approx. 0.5-..mu..m-thick In-Cd-S transition layer between the InP and the RXCdS. InP films were subsequently deposited on RXCdS at the reduced substrate temperature of 280/sup 0/C to reduce S-diffusion and improve the quality of the epitaxy. Complete InP epitaxy on RXCdS was achieved with the lateral dimensions of the InP (approx. = 40 ..mu..m) replicating that of the RXCdS. Given the increase in the concentration of n-type native defects as substrate temperature is decreased, the present lower limit for obtaining p-type InP by vacuum technologies appears to be about 300/sup 0/C. A 300 to 350/sup 0/C range of substrate temperature appears to befeasible for preparing large-grained p-type InP for both frontwall and backwall cell. However, if the thickness of the n-type layer due to S diffusion cannot be kept to less than a few thousand Angstroms, then development must be restricted to the frontwall cells.

Zanio, K.

1980-09-01T23:59:59.000Z

313

CdSiAs/sub 2/ thin films for solar cell applications. Final report, April 9, 1979-April 8, 1980  

DOE Green Energy (OSTI)

Compounds of Cd-Si-As required for sputtering targets and evaporation charges were synthesized by direct fusion. These include CdSiAs/sub 2/, Cd/sub 3/As/sub 2/, CdAs/sub 2/ and SiAs. Polycrystalline ingots of CdSiAs/sub 2/ were found to be porous, with the chalcopyrite structure, and with minor amounts of other phases such as CdAs/sub 2/, SiAs,As and Cd/sub 3/As/sub 2/. Sputtered films were formed in a single target RF system. A homogeneous CdSiAs/sub 2/ target was initially used, followed by composite targets consisting of CdAs/sub 2/ + Si. Films from the latter targets were superior to the others and were more extensively studied. As deposited films were amorphous, off stoichiometry, with resistivities over 10/sup 8/..cap omega..-cm and band gaps of approx. 1.4 eV. Subsequent reactive heat treatments in the 515/sup 0/ to 615/sup 0/C range resulted in crystalline films, resistivities of 1 to 10 ..cap omega.. cm, CdSiAs/sub 2/ compositions within 1% of stoichiometry, energy gap of approx. 1.55 eV, absorption coefficient of 2 x 10/sup 4/cm/sup -1/ at 0.6 ..mu..m, but with poor mechanical properties (mainly cracking). A Ta/Si0/sub 2/ substrate proved to be the best for these films. Thermal evaporation studies of CdSiAs/sub 2/ established that effusion is preferential toward Cd between 570 and 710/sup 0/C, and toward As in the 710 to 1010/sup 0/C range. All films resulting from CdAs/sub 2/ charges were found to be Cd deficient. For these reasons, over the last 6 months of the program, only sputtered films were studied further. Preliminary CdSiAs/sub 2//CdS junctions were formed on bulk and sputtered CdSiAs/sub 2/. The bulk junctions produced photoresponse up to 0.25V and several ..mu..A. The thin film junctions were rectifying, but generated insignificant photoresponse, apparently due to the poor properties of the CdSiAs/sub 2/ films.

Burton, L.C.; Slack, L.H.

1980-06-01T23:59:59.000Z

314

OpenEI launches new Water Power Gateway and Community Forum | OpenEI  

Open Energy Info (EERE)

Skip to Main Content Area Skip to Main Content Area Wiki Apps Datasets Community Home Groups Community Central Green Button Applications Developer Utility Rate FRED: FRee Energy Database More Public Groups Private Groups Features Groups Blog posts Content Stream Documents Discussions Polls Q & A Events Notices My stuff Energy blogs Login | Sign Up Search Facebook icon Twitter icon » OpenEI launches new Water Power Gateway and Community Forum Home > Groups > Water Power Forum Graham7781's picture Submitted by Graham7781(1992) Super contributor 28 March, 2013 - 15:16 community forum gateway OpenEI Water power OpenEI has launched a new Water Power Gateway, which contains links to critical public data sets, up-to-date information on technologies and events, a community forum to discuss topics of interest, links to major

315

ECOWAS Clean Energy Gateway-Policy/ProgramDesign | Open Energy Information  

Open Energy Info (EERE)

ECOWAS Clean Energy Gateway-Policy/ProgramDesign ECOWAS Clean Energy Gateway-Policy/ProgramDesign Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png Ivory Coast Liberia Mali Niger Nigeria Senegal Sierra Leone Togo Background → Design → Implementation →

316

OpenMSI: A Science Gateway to Sort Through Bio-Imaging's Big Datasets  

NLE Websites -- All DOE Office Websites (Extended Search)

OpenMSI: A Science OpenMSI: A Science Gateway to Sort Through Bio-Imaging's Big Datasets OpenMSI: A Science Gateway to Sort Through Bio-Imaging's Big Datasets August 27, 2013 | Tags: Basic Energy Sciences (BES), Carver, Computer Science, Dirac, Hopper, Life Sciences, Science Gateways, Visualization Group Contact: Linda Vu, +1 510 495 2402, lvu@lbl.gov OpenMSINERSC.jpg This overlay of mass spectrometry images shows the spatial distribution of three different kind of lipids across a whole mouse cross-section. Lipids act as the structural components of cell membranes and are responsible for energy storage, among other things. Image credit: Wolfgang Reindl (Berkeley Lab). Using cutting-edge mass spectrometry imaging (MSI) technology, scientists can study tissues, cell cultures and bacterial colonies in unprecedented

317

The Gateway Computational Web Portal: Developing Web Services for High Performance Computing  

E-Print Network (OSTI)

We describe the Gateway computational web portal, which follows a traditional three-tiered approach to portal design. Gateway provides a simplified, ubiquitously available user interface to high performance computing and related resources. This approach, while successful for straightforward applications, has limitations that make it difficult to support loosely federated, interoperable web portal systems. We examine the emerging standards in the so-called web services approach to business-to-business electronic commerce for possible solutions to these shortcomings and outline topics of research in the emerging area of computational grid web services.

Marlon Pierce; Choonhan Youn; Geoffrey Fox

2002-01-01T23:59:59.000Z

318

Solar Torx New Solar Ventures | Open Energy Information  

Open Energy Info (EERE)

Torx New Solar Ventures Torx New Solar Ventures Jump to: navigation, search Name Solar Torx / New Solar Ventures Place Arizona Product Set up in November 2005 to secure finance for a thin-film amorphous silicon cell and module manufacturing plant, and an associated 300MW power project. No evidence of progress as of June 2008, has probably been abandoned. References Solar Torx / New Solar Ventures[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Torx / New Solar Ventures is a company located in Arizona . References ↑ "Solar Torx / New Solar Ventures" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Torx_New_Solar_Ventures&oldid=351340" Categories:

319

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells; Annual subcontract report, 1 March 1992--28 February 1993  

DOE Green Energy (OSTI)

Solar cells operate by converting the radiation power from sun light into electrical power through photon absorption by semiconductor materials. The elemental and compound material systems widely used in photovoltaic applications can be produced in a variety of crystalline and non-crystalline forms. Although the crystalline group of materials have exhibited high conversion efficiencies, their production cost are substantially high. Several candidates in the poly- and micro-crystalline family of materials have recently gained much attention due to their potential for low cost manufacturability, stability, reliability and good performance. Among those materials, CuInSe{sub 2} and CdTe are considered to be the best choices for production of thin film solar cells because of the good optical properties and almost ideal band gap energies. Considerable progress was made with respect to cell performance and low cost manufacturing processes. Recently conversion efficiencies of 14.1 and 14.6% have been reported for CuInSe{sub 2} and CdTe based solar cells respectively. Even though the efficiencies of these cells continue to improve, they are not fully understood materials and there lies an uncertainty in their electrical properties and possible attainable performances. The best way to understand the details of current transport mechanisms and recombinations is to model the solar cells numerically. By numerical modeling, the processes which limit the cell performance can be sought and therefore, the most desirable designs for solar cells utilizing these materials as absorbers can be predicted. The problems with numerically modeling CuInSe{sub 2} and CdTe solar cells are that reported values of the pertinent material parameters vary over a wide range, and some quantities such as carrier concentration are not explicitly controlled.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., West Lafayette, IN (United States)

1994-03-01T23:59:59.000Z

320

Tunable Nanocrystalline CZTS for Solar Photovoltaics with No Required Annealing  

Thin-film solar cells are expected to replace the current first generation of solar photovoltaic technology due to their lower manufacturing cost and increased electrical output. Nanocrystal cells, one of the second generation of solar photovoltaics, ...

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Tianjin Jinneng Solar Cell Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Municipality, China Zip 300384 Sector Solar Product Chinese manufacturer of a-si Tandem thin-film solar cells and PV system integrator. References Tianjin Jinneng Solar Cell Co...

322

Implementation and Evaluation of Caching Method to Increase the Speed of UPnP Gateway  

Science Conference Proceedings (OSTI)

The Digital Living Network Alliance (DLNA) works toward a vision of an interoperable network of PCs, home appliances and mobile devices in the home, enabling a seamless environment for sharing and growing new digital media and content services with UPnP ... Keywords: home networking, information appliance, UPnP, gateway, caching method

Kohta Nakamura; Masahiro Ogawa; Takahiro Koita; Kenya Sato

2008-12-01T23:59:59.000Z

323

Energy-aware Gateway Selection for Increasing the Lifetime of Wireless Body Area Sensor Networks  

Science Conference Proceedings (OSTI)

A Wireless Body Area Sensor Network (WBASN) is composed of a set of sensor nodes, placed on, near or within a human body. WBASNs opt to continuously monitor the health conditions of individuals under medical risk, e.g., elders and chronically ill people, ... Keywords: Energy harvesting, Gateway selection algorithm, Network lifetime, Selective engagement of nodes, Wireless Body Area Sensor Networks (WBASN)

Cuneyt Bayilmis; Mohamed Younis

2012-06-01T23:59:59.000Z

324

Fabrication and Characterization of Organic Solar Cells  

E-Print Network (OSTI)

treatment of indium tin oxide for organicsolarJR. CriteriaforITO(indium?tin?oxide)anorganic lightexpansive material, indium thin oxide (ITO) thin films, with

Yengel, Emre

2010-01-01T23:59:59.000Z

325

Heterojunction solar cell  

DOE Patents (OSTI)

A high-efficiency single heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer. 1 fig.

Olson, J.M.

1994-08-30T23:59:59.000Z

326

Heterojunction solar cell  

DOE Patents (OSTI)

A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.

Olson, Jerry M. (Lakewood, CO)

1994-01-01T23:59:59.000Z

327

Solar collector  

DOE Patents (OSTI)

The field of this invention is solar collectors, and more particularly, the invention pertains to a flat plate collector that employs high performance thin films. The solar collector of this invention overcomes several problems in this field, such as excessive hardware, cost and reliability, and other prior art drawbacks outlined in the specification. In the preferred form, the apparatus features a substantially rigid planar frame (14). A thin film window (42) is bonded to one planar side of the frame. An absorber (24) of laminate construction is comprised of two thin film layers (24a, 24b) that are sealed perimetrically. The layers (24a, 24b) define a fluid-tight planar envelope (24c) of large surface area to volume through which a heat transfer fluid flows. Absorber (24) is bonded to the other planar side of the frame. The thin film construction of the absorber assures substantially full envelope wetting and thus good efficiency. The window and absorber films stress the frame adding to the overall strength of the collector.

Wilhelm, William G. (Cutchogue, NY)

1982-01-01T23:59:59.000Z

328

Signet Solar Inc | Open Energy Information  

Open Energy Info (EERE)

Signet Solar Inc Jump to: navigation, search Name Signet Solar Inc Place Palo Alto, California Zip 94306 Product US-based manufacturer of amorphous silicon thin-film modules....

329

All Day Solar | Open Energy Information  

Open Energy Info (EERE)

stage company planning to manufacture flexible thin-film PV modules for vehicular rooftop applications. References All Day Solar1 LinkedIn Connections CrunchBase Profile...

330

Efficient Polymer Solar Cells - Energy Innovation Portal  

Ames Laboratory researchers have developed a process for producing more efficient polymer solar cells by increasing light absorption through a thin ...

331

Bangkok Solar Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Co Ltd Jump to: navigation, search Name Bangkok Solar Co Ltd Place Chachoengsao, Thailand Zip 24140 Product Manufacturer of thin-film amorphous silicon modules, distributes in...

332

Nanostructured Inorganic Thin Film Enabled Fiber Optic Sensors for ...  

Science Conference Proceedings (OSTI)

... Thin Film Enabled Fiber Optic Sensors for Gas Sensing in Energy and Environmental Systems ... Co-Doped TiO2 Nanoparticles and Thin Films for Enhanced Solar Energy Utilization ... Synthesis of Magnetic Core-TS-1 Zeolite Shell Catalyst.

333

Gateway:América Latina | Open Energy Information  

Open Energy Info (EERE)

Latina Latina Jump to: navigation, search Banner vertical.jpg Energías Renovables Energia_solar Solar Eolica Eólica Geotermica Geotérmica Hidráulica Hidráulica Biomasa Biomasa Marina Marina Centros Latinoamericanos Desarrollo de Proyectos Marco Regulatorio Países Latinoamericanos Argentina Argentina Bolivia Bolivia Brazil Brazil Chile Chile Colombia Colombia Costa Rica Costa Rica Cuba Cuba Ecuador Ecuador El Salvador El Salvador Guatemala Guatemala Haiti Haiti Honduras Honduras Mexico Mexico Nicaragua Nicaragua Panama Panama Paraguay Paraguay Peru Peru Republica Dominicana Dominican Republic Uruguay Uruguay Venezuela Venezuela Otros sitios de interés Reegle, el motor de búsqueda de energías renovables y eficiencia energética Power Technologies Energy Data Book Asociación Latinoaméricana de Energía Eólica

334

Influence of copper to indium atomic ratio on the properties of Cu-In-Te based thin-film solar cells prepared by low-temperature co-evaporation  

SciTech Connect

The influence of copper to indium atomic ratio (Cu/In) on the properties of Cu-In-Te based thin films and solar cells was investigated. The films (Cu/In = 0.38-1.17) were grown on both bare and Mo-coated soda-lime glass substrates at 250 Degree-Sign C by single-step co-evaporation using a molecular beam epitaxy system. Highly (112)-oriented CuInTe{sub 2} films were obtained at Cu/In ratios of 0.84-0.99. However, stoichiometric and Cu-rich films showed a poor film structure with high surface roughness. The films consist of polyhedron-shaped grains, which are related to the coexistence of a Cu{sub 2-x}Te phase, and significant evidence for the coexistence of the Cu{sub 2-x}Te phase in the stoichiometric and Cu-rich films is presented. KCN treatment was performed for the films in order to remove the Cu{sub 2-x}Te phase. The stoichiometric CuInTe{sub 2} thin films exhibited a high mobility above 50 cm{sup 2}/V s at room temperature after the KCN treatment. A preliminary solar cell fabricated using a 1.4-{mu}m-thick Cu-poor CuInTe{sub 2} thin film (Cu/In = 0.84, E{sub g} = 0.988 eV) yielded a total-area efficiency of 2.10%. The photovoltaic performance of the cell was improved after long-term ambient aging in dark conditions.

Mise, Takahiro; Nakada, Tokio [Department of Electrical Engineering and Electronics, Aoyama Gakuin University, 5-10-1 Fuchinobe, Chuo-ku, Sagamihara, Kanagawa, 252-5258 (Japan)

2012-09-15T23:59:59.000Z

335

Former Chrysler Plant Changes Gears to Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Former Chrysler Plant Changes Gears to Solar Former Chrysler Plant Changes Gears to Solar Former Chrysler Plant Changes Gears to Solar October 4, 2010 - 10:00am Addthis Workers at Abound Solar -- who are about to get more than 1,000 new colleagues -- make a thin-film solar panel. | Photo courtesy of Abound Solar Workers at Abound Solar -- who are about to get more than 1,000 new colleagues -- make a thin-film solar panel. | Photo courtesy of Abound Solar Lorelei Laird Writer, Energy Empowers What are the key facts? Abound's factories is projected to employ 1,050 to 1,400 people. The project uses a $12.6 million tax credit and a $400 million loan guarantee. A shuttered Chrysler transmission factory in Tipton, Indiana, could set a new record once Abound Solar is finished with it. Thin film in Indiana Based in Loveland, Colo., Abound makes thin-film cadmium telluride solar

336

Biological, Electronic, and Functional Thin Films and Coatings I  

Science Conference Proceedings (OSTI)

Mar 4, 2013... scan (PPS) and electrical impedance spectroscopy (EIS). ... Eclipse Active and Passive Solar Control Coatings: Hulya ... In this paper two novel thin film coating systems will be presented for energy conservation solar...

337

Heteroepitaxial Si Thin Films Deposited on Flexible Copper ...  

Science Conference Proceedings (OSTI)

Presentation Title, Heteroepitaxial Si Thin Films Deposited on Flexible Copper Substrates for Solar Photovoltaics. Author(s), Daniela Florentina Bogorin, Lee...

338

A Better Steam Engine: Designing a Distributed Concentrating Solar Combined Heat and Power System  

E-Print Network (OSTI)

solar-electric system (typical for thin-film panels currently) plus a 58% efficient solar-thermal system (flat-plate efficiency

Norwood, Zachary Mills

2011-01-01T23:59:59.000Z

339

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids. 5 figs.

Catalano, A.W.; Bhushan, M.

1982-08-03T23:59:59.000Z

340

Thin film photovoltaic device  

DOE Patents (OSTI)

A thin film photovoltaic solar cell which utilizes a zinc phosphide semiconductor is of the homojunction type comprising an n-type conductivity region forming an electrical junction with a p-type region, both regions consisting essentially of the same semiconductor material. The n-type region is formed by treating zinc phosphide with an extrinsic dopant such as magnesium. The semiconductor is formed on a multilayer substrate which acts as an opaque contact. Various transparent contacts may be used, including a thin metal film of the same chemical composition as the n-type dopant or conductive oxides or metal grids.

Catalano, Anthony W. (Wilmington, DE); Bhushan, Manjul (Wilmington, DE)

1982-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

West African Clean Energy Gateway-Software Analysis Tools | Open Energy  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Page Edit History Facebook icon Twitter icon » West African Clean Energy Gateway-Software Analysis Tools Jump to: navigation, search Economic Community of West African States (ECOWAS) Clean Energy Gateway Home | About | News | Links | Help | Countries Benin | Burkina Faso | Cape Verde | Gambia | Ghana | Guinea| Guinea-Bissau | Ivory Coast | Liberia | Mali | Niger | Nigeria | Senegal | Sierra Leone | Togo Countries ECREEE light.JPG FBenin.png FBurkinaFaso.png FCapeVerde.png FGambia.png FGhana.png FGuinea.png FGuinea-Bissau.png Benin Burkina Faso Cape Verde Gambia Ghana Guinea Guinea-Bissau FIvoryCoast.png FLiberia.png FMali.png FNiger.png FNigeria.png FSenegal.png FSierraLeone.png FTogo.png

342

An Energy Efficient Protocol for Gateway-Centric Federated Residential Access Networks  

E-Print Network (OSTI)

The proliferation of overlapping, always-on IEEE 802.11 Access Points (APs) in urban areas can cause spectrum sharing conflicts, inefficient bandwidth usage and power waste. Cooperation among APs could address these problems (i) by allowing under-used devices to hand over their clients to nearby APs and temporarily switch off, (ii) by balancing the load of clients among APs and thus offloading congested APs. The federated houses model provides an appealing backdrop to implement cooperation among APs. In this paper, we outline a framework that, assuming the presence of a multipurpose gateway with AP capabilities in every household, allows such cooperation through the monitoring of local wireless resources and the triggering of offloading requests toward other federated gateways. We then present simulation results in realistic settings that provide some insight on the capabilities of our framework.

Rossi, Claudio; Chiasserini, Carla-Fabiana

2011-01-01T23:59:59.000Z

343

Atmospheric Pressure Chemical Vapor Deposition of High Silica SiO2-TiO2 Antireflective Thin Films for Glass Based Solar Panels  

SciTech Connect

The atmospheric pressure chemical vapor deposition (APCVD) of SiO2-TiO2 thin films employing [[(tBuO)3Si]2O-Ti(OiPr)2], which can be prepared from commercially available materials, results in antireflective thin films on float glass under industrially relevant manufacturing conditions. It was found that while the deposition temperature had an effect on the SiO2:TiO2 ratio, the thickness was dependent on the time of deposition. This study shows that it is possible to use APCVD employing a single source precursor containing titanium and silicon to produce thin films on float glass with high SiO2:TiO2 ratios.

Klobukowski, Erik R [ORNL; Tenhaeff, Wyatt E [ORNL; McCamy, James [PPG; Harris, Caroline [PPG; Narula, Chaitanya Kumar [ORNL

2013-01-01T23:59:59.000Z

344

Baker-Barry Tunnel Lighting: Evaluation of a Potential GATEWAY Demonstrations Project  

SciTech Connect

The U.S. Department of Energy (DOE) is evaluating the Baker-Barry Tunnel as a potential GATEWAY Demonstrations project for deployment of solid-state lighting (SSL) technology. The National Park Service (NPS) views this project as a possible proving ground and template for implementation of light-emitting diode (LED) luminaires in other NPS tunnels, thereby expanding the estimated 40% energy savings from 132 MWh/yr for this tunnel to a much larger figure national

Tuenge, Jason R.

2011-06-01T23:59:59.000Z

345

Applications of Passive Thin Films  

DOE Green Energy (OSTI)

The physical properties of thin films affect the performance and durability of nearly every solar energy conversion device. Familiar examples of thin films for solar applications are optical materials and protective coatings. Optimized optical properties are key to cost-effective photothermal conversion where individual components must have high absorptance, reflectance, or transmittance. The protection of sensitive substrates from corrosion and/or erosion is essential to ensure adequate component and system lifetime. Such substrates range from photovoltaic materials operating near room temperature to turbine blade structural alloys in hostile environments at very high temperatures (>1,000 degrees C). Although much has been written on particular categories of thin-film materials for solar energy (for example, absorbers for receiver surfaces), to date no one has provided an overview of the spectrum of applications for passive thin films in solar energy. This work is such an overview and also reviews the material state of the art as described in the current literature. Active thin film devices such as photovoltaics and thermoeleetrics are not discussed.

Call, P. J.

1979-05-01T23:59:59.000Z

346

Gateway:América Latina/Centros Latinoamericanos | Open Energy Information  

Open Energy Info (EERE)

Gateway Gateway Edit History Facebook icon Twitter icon » Gateway:América Latina/Centros Latinoamericanos Jump to: navigation, search Centros banner.jpg Mapa de Centros de Energías Renovables en Latinoamérica BArgentina.jpg Argentina Asociación Argentina de Energías Renovables y Ambiente- Privado Cámara Argentina de Energías Renovables- Privado Secretaría de Energía- Público BBrazil.jpg Brasil Centro de energias renováveis- Investigación Centro de Tecnologias do Gás e Energias Renováveis (CTGAS-ER)- Investigación Subsecretário de Planejamento e Desenvolvimento de Energia/ Subsecretaría de Planificación y Desarrollo de la Energía- Público União Brasileira do Biodiesel- Privado BColombia.jpg Colombia Ministerio de Minas y Energías- Público Red Energías Alternativas- Privado

347

SunShot Initiative: Thin Film Photovoltaics Research  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaics Research Thin Film Photovoltaics Research to someone by E-mail Share SunShot Initiative: Thin Film Photovoltaics Research on Facebook Tweet about SunShot Initiative: Thin Film Photovoltaics Research on Twitter Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Google Bookmark SunShot Initiative: Thin Film Photovoltaics Research on Delicious Rank SunShot Initiative: Thin Film Photovoltaics Research on Digg Find More places to share SunShot Initiative: Thin Film Photovoltaics Research on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Thin Film Photovoltaics Research The U.S. Department of Energy (DOE) supports research and development of

348

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells  

DOE Green Energy (OSTI)

This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-04-01T23:59:59.000Z

349

Effects of Cu Diffusion from ZnTe:Cu/Ti Contacts on Carrier Lifetime of CdS/CdTe Thin Film Solar Cells: Preprint  

DOE Green Energy (OSTI)

We study the performance of CdS/CdTe thin film PV devices processed with a ZnTe:Cu/Ti contact to investigate how carrier lifetime in the CdTe layer is affected by Cu diffusion from the contact.

Gessert, T. A.; Metzger, W. K.; Asher, S. E.; Young, M. R.; Johnston, S.; Dhere, R. G.; Duda, A.

2008-05-01T23:59:59.000Z

350

Optimization of Processing and Modeling Issues for Thin Film Solar Cell Devices Including Concepts for the Development of Polycrystalline Multijunctions Annual Subcontract Report, 24 August 1999 - 23 August 2000  

DOE Green Energy (OSTI)

This report describes the results achieved during Phase I of a three-phase subcontract to develop and understand thin-film solar cell technology associated with CuInSe2 and related alloys, a-Si and its alloys, and CdTe. Modules based on all these thin films are promising candidates to meet DOE long-range efficiency, reliability, and manufacturing cost goals. The critical issues being addressed under this program are intended to provide the science and engineering basis for developing viable commercial processes and to improve module performance. The generic research issues addressed are: (1) quantitative analysis of processing steps to provide information for efficient commercial-scale equipment design and operation; (2) device characterization relating the device performance to materials properties and process conditions; (3) development of alloy materials with different bandgaps to allow improved device structures for stability and compatibility with module design; (4) development of improved window/heterojunction layers and contacts to improve device performance and reliability; and (5) evaluation of cell stability with respect to illumination, temperature, and ambient, and with respect to device structure and module encapsulation.

Birkmire, R. W.; Phillips, J. E.; Shafarman, W. N.; Eser, E.; Hegedus, S. S.; McCandless, B. E.

2001-11-14T23:59:59.000Z

351

Development of a computer model for polycrystalline thin-film CuInSe sub 2 and CdTe solar cells  

DOE Green Energy (OSTI)

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. (Purdue Univ., Lafayette, IN (United States))

1992-09-01T23:59:59.000Z

352

Development of high-efficiency, thin-film CdTe solar cells. Final subcontract report, 1 February 1992--30 November 1995  

DOE Green Energy (OSTI)

This report describes work performed by the Georgia Institute of Technology (GIT) to bring the polycrystalline CdTe cell efficiency a step closer to the practically achievable efficiency of 18% through fundamental understanding of detects and loss mechanisms, the role of chemical and heat treatments, and investigation of now process techniques. The objective was addressed by a combination of in-depth characterization, modeling, materials growth, device fabrication, and `transport analyses of Au/Cu/CdTe/CdS/SnO {sub 2} glass front-wall heterojunction solar cells. GiT attempted to understand the loss mechanism(s) in each layer and interface by a step-by-step investigation of this multilayer cell structure. The first step was to understand, quantify, and reduce the reflectance and photocurrent loss in polycrystalline CdTe solar calls. The second step involved the investigation of detects and loss mechanisms associated with the CdTe layer and the CdTe/CdS interface. The third stop was to investigate the effect of chemical and heat treatments on CdTe films and cells. The fourth step was to achieve a better and reliable contact to CdTe solar cells by improving the fundamental understanding. Of the effects of Cu on cell efficiency. Finally, the research involved the investigation of the effect of crystallinity and grain boundaries on Cu incorporation in the CdTe films, including the fabrication of CdTe solar calls with larger CdTe grain size.

Rohatgi, A.; Chou, H.C.; Kamra, S.; Bhat, A. [Georgia Inst. of Tech., Atlanta, GA (United States)

1996-01-01T23:59:59.000Z

353

Solar Chemical Peculiarities? By  

E-Print Network (OSTI)

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar analogs, the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel. 1.

Carlos Allende Prieto

2006-01-01T23:59:59.000Z

354

Solar Chemical Peculiarities?  

E-Print Network (OSTI)

Several investigations of FGK stars in the solar neighborhood have suggested that thin-disk stars with an iron abundance similar to the Sun appear to show higher abundances of other elements, such as silicon, titanium, or nickel. Offsets could arise if the samples contain stars with ages, mean galactocentric distances, or kinematics, that differ on average from the solar values. They could also arise due to systematic errors in the abundance determinations, if the samples contain stars that are different from the Sun regarding their atmospheric parameters. We re-examine this issue by studying a sample of 80 nearby stars with solar-like colors and luminosities. Among these solar "analogs", the objects with solar iron abundances exhibit solar abundances of carbon, silicon, calcium, titanium and nickel.

Carlos Allende Prieto

2006-12-08T23:59:59.000Z

355

Thin films of mixed metal compounds  

DOE Patents (OSTI)

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

Mickelsen, Reid A. (Bellevue, WA); Chen, Wen S. (Seattle, WA)

1985-01-01T23:59:59.000Z

356

New Thin Film CuGaSe2/Cu(In,Ga)Se2 Bifacial, Tandem Solar Cell with Both Junctions Formed Simultaneously  

Science Conference Proceedings (OSTI)

Thin films of CuGaSe2 and Cu(In,Ga)Se2 were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n+/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60C. The resulting four-terminal device is a non-mechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (h= 3.7%, Voc= 1.1 V[AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.

Young, D. L.; Abu-Shama, J.; Noufi, R.; Li, X.; Keane, J.; Gessert, T. A.; Ward, J. S.; Contreas, M.; Symko-Davies, M.; Coutts, T. J.

2002-05-01T23:59:59.000Z

357

Joint Development of Coated Conductor and Low Cost Thin Film Solar Cells: Cooperative Research and Development Final Report, CRADA Number CRD-007-213  

DOE Green Energy (OSTI)

UES plans on developing CIGS thin films by using Metal Organic Deposition (MOD) technique as it is a low-cost, non-vacuum method for scale-up to large area PV modules. NREL will support UES, Inc. through expert processing, characterization and device fabrication. NREL scientists will also help develop a processing phase diagram which includes composition, film thickness, annealing temperature and ambient conditions. Routine measurements of devices and materials will be done under NREL's core support project.

Bhattacharya, R.

2011-02-01T23:59:59.000Z

358

Structure of Silicon-Based Thin Film Solar Cell Materials: Annual Technical Progress Report, 1 April 2002--31 August 2003  

DOE Green Energy (OSTI)

The purpose of this research is to achieve a better understanding to improve materials used as the intrinsic layers of amorphous and microcrystalline silicon-based solar cells. Fundamental structural properties will be investigated on atomic and nano-scales. A powerful combination of techniques will be used: analytical high-resolution transmission electron microscopy (HRTEM), including special associated spectroscopic methods, small-angle scattering techniques (SAXS, ASAXS, SANS), and conventional wide-angle X-ray diffraction (XRD).

Williamson, D. L.

2004-01-01T23:59:59.000Z

359

TGI Solar Power Group | Open Energy Information  

Open Energy Info (EERE)

TGI Solar Power Group TGI Solar Power Group Jump to: navigation, search Name TGI Solar Power Group Place New York, New York Zip 10001 Sector Solar Product TGI Solar Power Group specialises in the manufacture and integration of thin film PV fabrication lines, PV thin film manufacturing equipment, as well as project development. References TGI Solar Power Group[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. TGI Solar Power Group is a company located in New York, New York . References ↑ "TGI Solar Power Group" Retrieved from "http://en.openei.org/w/index.php?title=TGI_Solar_Power_Group&oldid=352158" Categories: Clean Energy Organizations Companies Organizations

360

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b  

E-Print Network (OSTI)

Design and fabrication of photonic crystal thin film photovoltaic cells Guillaume Gomarda,b , Ounsi of an absorbing planar photonic crystal within a thin film photovoltaic cell. The devices are based on a stack with large areas. Keywords: Photonic crystal, Photovoltaic solar cell, Thin film solar cell, Hydrogenated

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Gateway:América Latina/Aprender más sobre las ERNC/Seleccion de  

Open Energy Info (EERE)

Gateway Gateway Edit History Facebook icon Twitter icon » Gateway:América Latina/Aprender más sobre las ERNC/Seleccion de Webinars/Prospección y Estudios de Pre-Inversion/Biomasa Jump to: navigation, search Biomasa Agrícola The Quest for Maximizing Ethanol Plant Yield Fuente: Novozymes Bioenergy Idioma: Inglés Non-Tradition Feedstock Production Fuente: Universidad de Michigan State Idioma: Inglés Curso de Producción de Biodiesel Fuente: Novozymes Bioenergy Idioma: Español Biomasa Forestal Forest Conservation Strategies in Chile Fuente: Forestry Webinar Portal Idioma: Inglés The South Rises Again: Industrial Forest Management in Chile Fuente: Forestry Webinar Portal Idioma: Inglés Residuos Orgánicos An Introduction to On-Farm Anaerobic Digestion Fuente: Universidad de Penn State

362

Gateway:América Latina/Aprender más sobre las ERNC/Puesta en Marcha,  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:América Latina/Aprender más sobre las ERNC/Puesta en Marcha, Operación y Comercialización/Eolica Jump to: navigation, search Generate lift by pitching a blade Fuente: Vestas Idioma: Inglés What is wind turbine service Fuente: Vestas Idioma: Inglés About grid disturbance Fuente: Vestas Idioma: Inglés Challenge Vestas control system Fuente: Vestas Idioma: Inglés When wind turbines retire Fuente: Vestas Idioma: Inglés Retrieved from "http://en.openei.org/w/index.php?title=Gateway:América_Latina/Aprender_más_sobre_las_ERNC/Puesta_en_Marcha,_Operación_y_Comercialización/Eolica&oldid=304534"

363

Gateway:Amrica Latina/Aprender ms sobre las ERNC/Seleccion...  

Open Energy Info (EERE)

Using Satellite Data Fuente: Leonardo Energy Idioma: Ingls Assesing Solar Resource for CSP plants Fuente: Leonardo Energy Idioma: Ingls Solar Water Heating Basics Fuente: AltE...

364

Thinner Film Silicon Solar Cells - Energy Innovation Portal  

Technology Marketing Summary Berkeley Lab scientists have designed a new approach to create thin film silicon solar cells with a potential increase in ...

365

OSTI News Transcripts, OSTI sends solar energy info to the public (March  

Office of Scientific and Technical Information (OSTI)

OSTI sends solar energy info to the public (March OSTI sends solar energy info to the public (March 2007), Office of Scientific and Technical Information, U.S. Department of Energy, www.osti.gov June 2007 WorldWideScience.org Listen Now WorldWideScience.org Global Science Gateway Now Open You can now easily access science from around the world via a single Web entry point, WorldWideScience.org. This new global science gateway opened for free public access on June 22, at the public meeting of the International Council for Scientific and Technical Information Annual General Assembly in Nancy, France. WorldWideScience.org currently retrieves research results from more than 200 million pages of information from 15 national portals of 10 countries - Australia, Brazil, Canada, Denmark, France, Germany, Japan, the

366

Excess Dark Currents and Transients in Thin-Film CdTe Solar Cells: Implications for Cell Stability and Encapsulation of Scribe Lines and Cell Ends in Modules  

DOE Green Energy (OSTI)

We have isolated a non-linear, metastable, shunt-path failure mechanism located at the CdS/CdTe cell edge. In such cases, most performance loss, usually erratic, can be associated with the shunt path. We studied these shunt paths using dark current-transients and infrared (ir) imaging and find only one shunt path per cell and only at the cell corner wall, even in badly degraded cells. The effect on diminishing the cell's efficiency far exceeds what would be expected from the cell's linear shunt-resistance value. We propose that current transients and ir imaging be used as a ''fingerprint'' of the source and magnitude of excess currents to evaluate the contribution of scribe-line edges and cell ends in thin-film module performance and degradation due to environmental stress. Protection afforded by, or contamination due to, new or currently used encapsulants can then be evaluated.

McMahon, T. J.; Berniard, T. J.; Albin, D. S.; Demtsu, S. H.

2005-02-01T23:59:59.000Z

367

Comparison Between Research-Grade SnO2 and Commercial Available SnO2 for Thin-Film CdTe Solar Cell (Poster)  

DOE Green Energy (OSTI)

A comparison between research-grade, tin-oxide (SnO{sub 2}) thin films and those available from commercial sources is performed. The research-grade SnO{sub 2} film is fabricated at NREL by low-pressure metal-organic chemical vapor deposition. The commercial SnO{sub 2} films are Pilkington Tec 8 and Tec 15 fabricated by atmospheric-pressure chemical vapor deposition. Optical, structural, and compositional analyses are performed. From the optical analysis, an estimation of the current losses due to the SnO{sub 2} layer and glass is provided. Our analysis indicates that the optical properties of commercial SnO{sub 2} could be improved for PV usage.

Li, X.; Pankow, J.; To, B.; Gessert, T.

2008-05-01T23:59:59.000Z

368

Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface  

DOE Green Energy (OSTI)

The chemical interface structure between phosphorus-doped hydrogenated amorphous silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600C. In addition to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In particular, we find an SPC-enhanced formation of Si-O bonds and the accumulation of Zn in close proximity to the interface. For an assumed closed and homogeneous SiO2 interlayer, an effective thickness of (5+2)nm after SPC could be estimated.

Bar, M.; Wimmer, M.; Wilks, R. G.; Roczen, M.; Gerlach, D.; Ruske, F.; Lips, K.; Rech, B.; Weinhardt, L.; Blum, M.; Pookpanratana, S.; Krause, S.; Zhang, Y.; Heske, C.; Yang, W.; Denlinger, J. D.

2010-04-30T23:59:59.000Z

369

NREL: Photovoltaics Research - Thin Film Photovoltaic Partnership Project  

NLE Websites -- All DOE Office Websites (Extended Search)

Thin Film Photovoltaic Partnership Project Thin Film Photovoltaic Partnership Project NREL's Thin Film Photovoltaic (PV) Partnership Project led R&D on emerging thin-film solar technologies in the United States from 1994 to 2009. The project made many advances in thin-film PV technologies that allowed the United States to attain world leadership in this area of solar technology. Three national R&D teams focused on thin-film semiconductor materials: amorphous silicon (a-Si), cadmium telluride (CdTe), and copper indium gallium diselenide (CIGS) and its alloys. The Module Reliability Team and Environmental Health and Safety Team were crosscutting. The teams comprised researchers from the solar industry, academia, and NREL who focused their efforts on improving materials, devices, and manufacturing processes-all

370

NREL: Learning - Solar Hot Water  

NLE Websites -- All DOE Office Websites (Extended Search)

Hot Water Hot Water Photo of solar collectors on a roof for a solar hot water system. For solar hot water systems, flat-plate solar collectors are typically installed facing south on a rooftop. The shallow water of a lake is usually warmer than the deep water. That's because the sunlight can heat the lake bottom in the shallow areas, which in turn, heats the water. It's nature's way of solar water heating. The sun can be used in basically the same way to heat water used in buildings and swimming pools. Most solar water heating systems for buildings have two main parts: a solar collector and a storage tank. The most common collector is called a flat-plate collector. Mounted on the roof, it consists of a thin, flat, rectangular box with a transparent cover that faces the sun. Small tubes

371

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

Solar cell Solar cell (Redirected from Definition:PV cell) Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary

372

Best Solar Co Ltd | Open Energy Information  

Open Energy Info (EERE)

Solar Co Ltd Solar Co Ltd Jump to: navigation, search Name Best Solar Co Ltd Place Suzhou, Jiangsu Province, China Sector Solar Product Thin-film solar startup Best Solar was set up by LDK CEO Xiaofeng Peng. References Best Solar Co Ltd[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Best Solar Co Ltd is a company located in Suzhou, Jiangsu Province, China . References ↑ "Best Solar Co Ltd" Retrieved from "http://en.openei.org/w/index.php?title=Best_Solar_Co_Ltd&oldid=342687" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes Special pages Printable version Permanent link Browse properties 429 Throttled (bot load)

373

GATEWAY ENTERPRISES  

Office of Legacy Management (LM)

or gas accumulations would not be present, and the pressure impact of a gas production well (as hypothesized in the model) would dominate over any natural pressure...

374

Thin air-plasma-treated alkali fluoride layers for improved hole extraction in copper phthalocyanine/C70-based solar cells  

SciTech Connect

Alkali fluorides, mostly LiF and CsF, are well-known to improve electron injection/extraction in organic light-emitting diodes (OLEDs) and organic solar cells (OSCs). They are also utilized, though to a lesser extent, for hole injection in OLEDs. Here we demonstrate a new role for such fluorides in enhancing OSCs hole extraction.We show that an ultrathin air-plasmatreated alkali fluoride layer between the indium tin oxide (ITO) anode and the active layer in copper phthalocyanine CuPc?C70-based OSCs increases the short circuit current by up to ?17% for cells with LiF and ?7% for cells with NaF or CsF. The effects of the fluoride layer thickness and treatment duration were evaluated, as were OSCs with oxidized and plasma-treated Li and UV-ozone treated LiF. Measurements included current voltage, absorption, external quantum efficiency (EQE), atomic force microscopy, and x-ray photoelectron spectroscopy, which showed the presence of alkali atoms F and O at the treated ITO/fluoride surface. The EQE of optimized devices with LiF increased at wavelengths >560 nm, exceeding the absorption increase. Overall, the results indicate that the improved performance is due largely to enhanced hole extraction, possibly related to improved energy-level alignment at the fluorinated ITO/CuPc interface, reduced OSC series resistance, and in the case of LiF, improved absorption.

Xiao, Teng; Cui, Weipan; Cai, Min; Liu, Rui; Anderegg, James W.; Shinar, Joseph; Shinar, Ruth

2012-03-12T23:59:59.000Z

375

Advanced processing technology for high-efficiency thin-film CuInSe{sub 2} solar cells. Annual subcontract report, 1 March 1992--28 February 1993  

DOE Green Energy (OSTI)

This report describes work to develop novel fabrication for CuInSe{sub 2} (CIS) solar cells that will result in improved performance and cost effectiveness at the manufacturing level. The primary approach involves all solid-state processing for CIS. This was augmented by work to provide novel alternatives for the formation of the window layer/heterojunction contact. Inherent to the project was the need to develop a generic understanding of the relationship between processing and performance so that broad-based transfer to industry can be facilitated. We achieved good-electronic-quality CIS by the use of two selenization procedures for predeposited metal layers. We achieved good stoichiometry throughout the bulk of the film, attained grain sizes of up to 1 {mu}m, and measured electron mobilities of up to 60 cm{sup 2}V-s. However, there is a complex relationship between grain size, adhesion, and performance. Our primary approach to characterization was to fabricate ZnO/CIS test devices and measure as many properties as possible in device format. We are also developing reactive sputtering of ZnO as an alternative window layer technology.

Morel, D.L.; Attar, G.; Karthikeyan, S.; Muthaiah, A.; Zafar, A. [University of South Florida, Tampa, FL (United States)

1993-08-01T23:59:59.000Z

376

High-efficiency cadmium and zinc-telluride-based thin-film solar cells. Annual subcontract report, 1 March 1990--28 February 1991  

DOE Green Energy (OSTI)

This report describes research into polycrystalline CdTe solar cells grown by metal-organic chemical vapor deposition. Efficiencies of {approximately}10% were achieved using both p-i-n and p-n structures. A pre-heat treatment of CdS/SnO{sub 2}/glass substrates at 450{degrees}C in hydrogen atmosphere prior to the CdTe growth was found to be essential for high performance because this heat treatment reduces oxygen-related defects from the CdS surface. However, this treatment also resulted in a Cd-deficient CdS surface, which may in part limit the CdTe cell efficiency to 10% due to Cd vacancy-related interface defects. Preliminary model calculations suggest that removing these states can increase the cell efficiency from 10% to 13.5%. Photon absorption in the CdS film also limits the cell performance, and eliminating this loss mechanism can result in CdTe efficiencies in excess of 18%. Polycrystalline, 1.7-e, CdZnTe films were also grown for tandem-cell applications. CdZnTe/CdS cells processed using the standard CdTe cell fabrication procedure resulted in 4.4% efficiency, high series resistance, and a band-gap shift to 1.55 eV. The formation of Zn-O at and near the CdZnTe surface is the source of high contact resistance. A saturated dichromate each prior to contact deposition was found to solve the contact resistance problem. The CdCl{sub 2} treatment was identified as the cause of the observed band-gap shift due to the preferred formation of ZnCl{sub 2}. 59 refs.

Rohatgi, A.; Sudharsanan, R.; Ringel, S. [Georgia Inst. of Tech., Atlanta, GA (United States)

1992-02-01T23:59:59.000Z

377

CdSiAs/sub 2/ thin films for solar cell applications. First quarter report April 9, 1979-June 30, 1979  

DOE Green Energy (OSTI)

Near stoichiometric bulk polycrystalline CdSiAs/sub 2/ has been synthesized by two techniques: (1) direct fusion of the elements and (2) direct fusion of the binaries SiAs, Cd/sub 3/As/sub 2/ and CdAs/sub 2/. The latter technique resulted in denser ternary material with good homogeneity. The above binaries melt congruently and were also formed by direct fusion. Sputtered ternary films were formed using a bulk CdSiAs/sub 2/ target, and a composite target of CdAs/sub 2/ discs in a Si plate. Composition of the CdSiAS/sub 2/ target changed with sputtering time. Amorphous films deposited from that target were heat treated, and became crystalline and near stoichiometric but with poor mechanical properties. It appears that films deposited from the composite target (Si + CdAs/sub 2/) can be adjusted to stoichiometry by means of sputtering power and target geometry. As deposited, these films also were amorphous. With respect to evaporated films, the study of thermal decomposition of CdSiAs/sub 2/ in vacuum was completed. The decomposition is preferential toward Cd between 570/sup 0/ and 710/sup 0/C, and toward As in the 710 to 1010/sup 0/C range. It is concluded that evaporation of the ternary is not a suitable method for forming CdSiAs/sub 2/ films. Plans for the next reporting period include continued sputtering studies with the composite target, constructing a two-source setup for evaporated films, expanded film characterization and fabrication of bulk CdSiAs/sub 2//CdS solar cells.

Burton, L.C.; Slack, L.H.

1979-07-25T23:59:59.000Z

378

Solar heat collector  

SciTech Connect

A solar heat collector comprises an evacuated transparent pipe; a solar heat collection plate disposed in the transparent pipe; a heat pipe, disposed in the transparent pipe so as to contact with the solar heat collection plate, and containing an evaporable working liquid therein; a heat medium pipe containing a heat medium to be heated; a heat releasing member extending along the axis of the heat medium pipe and having thin fin portions extending from the axis to the inner surface of the heat medium pipe; and a cylindrical casing surrounding coaxially the heat medium pipe to provide an annular space which communicates with the heat pipe. The evaporable working liquid evaporates, receiving solar heat collected by the heat collection plate. The resultant vapor heats the heat medium through the heat medium pipe and the heat releasing member.

Yamamoto, T.; Imani, K.; Sumida, I.; Tsukamoto, M.; Watahiki, N.

1984-04-03T23:59:59.000Z

379

Solar cell array interconnects  

DOE Patents (OSTI)

Electrical interconnects are disclosed for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value. 4 figs.

Carey, P.G.; Thompson, J.B.; Colella, N.J.; Williams, K.A.

1995-11-14T23:59:59.000Z

380

Solar cell array interconnects  

DOE Patents (OSTI)

Electrical interconnects for solar cells or other electronic components using a silver-silicone paste or a lead-tin (Pb-Sn) no-clean fluxless solder cream, whereby the high breakage of thin (<6 mil thick) solar cells using conventional solder interconnect is eliminated. The interconnects of this invention employs copper strips which are secured to the solar cells by a silver-silicone conductive paste which can be used at room temperature, or by a Pb-Sn solder cream which eliminates undesired residue on the active surfaces of the solar cells. Electrical testing using the interconnects of this invention has shown that no degradation of the interconnects developed under high current testing, while providing a very low contact resistance value.

Carey, Paul G. (Mountain View, CA); Thompson, Jesse B. (Brentwood, CA); Colella, Nicolas J. (Livermore, CA); Williams, Kenneth A. (Livermore, CA)

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Solar Notion Inc | Open Energy Information  

Open Energy Info (EERE)

Notion Inc Jump to: navigation, search Name Solar Notion Inc Place Menlo Park, California Zip 94025 Product Startup with an undisclosed type of thin-film PV technology. References...

382

Terra Solar Global Inc | Open Energy Information  

Open Energy Info (EERE)

(a-Si) thin-film modules, inverters, and various balance of system components such as batteries, converters, and charge controllers for use in PV systems. References Terra Solar...

383

Advanced Solar Photonics | Open Energy Information  

Open Energy Info (EERE)

Photonics Place Lake Mary, Florida Zip 32746 Product Florida-based thin film PV module manufacturer. References Advanced Solar Photonics1 LinkedIn Connections CrunchBase Profile...

384

Solar Plus SA | Open Energy Information  

Open Energy Info (EERE)

to set up a 5.5MWyear thin-film silicon module factory in Aveiro, Portugal, using EPV Solar equipment, and plans to design, market and install the products in various small...

385

BioSolar Inc | Open Energy Information  

Open Energy Info (EERE)

of sub and superstrates made of plant sources; it can be used for crystalline or thin-film technologies. References BioSolar Inc1 LinkedIn Connections CrunchBase Profile...

386

The State of Solar Power: Benchmarking Solar Technology, Market, and Project Developments  

Science Conference Proceedings (OSTI)

The proliferation of solar projects throughout the world is accelerating the pace of technical and economic change in the sector. In fact, innovation is occurring across all the major solar technologies, including crystalline and thin-film, flat-plate photovoltaics, concentrating photovoltaics, and concentrating solar thermal power (CSP), and is driving greater commercial and utility interest. As the sector matures, benchmarking solar market developments and pioneering project work is becoming increasing...

2010-12-23T23:59:59.000Z

387

Willard Kelsey Solar Group WK Solar | Open Energy Information  

Open Energy Info (EERE)

Willard Kelsey Solar Group WK Solar Willard Kelsey Solar Group WK Solar Jump to: navigation, search Name Willard & Kelsey Solar Group (WK Solar) Place Perrysburg, Ohio Zip 43551 Product Manufacturer of CdTe thin-film PV modules located close to Toledo, Ohio. Coordinates 41.55671°, -83.628899° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":41.55671,"lon":-83.628899,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

388

High Speed AB-Solar Sail  

E-Print Network (OSTI)

The Solar sail is a large thin film used to collect solar light pressure for moving of space apparatus. Unfortunately, the solar radiation pressure is very small about 9 mkN/sq.m at Earth's orbit. However, the light force significantly increases up to 0.2 - 0.35 N/sq.m near the Sun. The author offers his research on a new revolutionary highly reflective solar sail which flyby (after special maneuver) near Sun and attains velocity up to 400 km/sec and reaching far planets of the Solar system in short time or enable flights out of Solar system. New, highly reflective sail-mirror allows avoiding the strong heating of the solar sail. It may be useful for probes close to the Sun and Mercury and Venus. Key words: AB-solar sail, highly reflective solar sail, high speed propulsion.

A. Bolonkin

2007-01-08T23:59:59.000Z

389

2 Thin Films Prepared by Sequential Evaporation for Photovoltaic  

Science Conference Proceedings (OSTI)

The defects of Cu-Se di-vacancies are formed in Cu(In,Ga)Se2 thin films and influence to the solar cell performance. In this study, we have fabricated Cu(In...

390

FTL Solar | Open Energy Information  

Open Energy Info (EERE)

FTL Solar FTL Solar Jump to: navigation, search Name FTL Solar Place Austin, Texas Zip TX 78701 Sector Solar Product FTL Solar develops lightweight, flexible tensile structures embedded with thin-film solar cells. Coordinates 30.267605°, -97.742984° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":30.267605,"lon":-97.742984,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

391

ITi Solar | Open Energy Information  

Open Energy Info (EERE)

ITi Solar ITi Solar Jump to: navigation, search Logo: iTi Solar Name iTi Solar Address 8401 Baseline Road Place Boulder, Colorado Zip 80303 Sector Solar Product Developing thin-film solar that can be printed on an inkjet printer Website http://www.itisolar.com/ Coordinates 40.001628°, -105.157147° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.001628,"lon":-105.157147,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

392

Abound Solar | Open Energy Information  

Open Energy Info (EERE)

Abound Solar Abound Solar Jump to: navigation, search Logo: Abound Solar Name Abound Solar Address 2695 Rocky Mountain Avenue, Suite 100 Place Loveland, Colorado Zip 80538 Sector Solar Product Thin-film cadmium telluride solar modules Website http://www.abound.com Coordinates 40.4178546°, -105.0002985° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4178546,"lon":-105.0002985,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

393

Innovative Systems Engineering Solar LLC ISE Solar LLC | Open Energy  

Open Energy Info (EERE)

Solar LLC ISE Solar LLC Solar LLC ISE Solar LLC Jump to: navigation, search Name Innovative Systems Engineering Solar LLC (ISE Solar LLC) Place Warminster, Pennsylvania Zip 18974-1454 Sector Solar Product US-based manufacturer of vacuum deposition equipment for thin-film amorphous silicon products; offers management and operation of thin-film solar plants. Coordinates 40.205459°, -75.100077° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.205459,"lon":-75.100077,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

394

Polycrystalline thin film materials and devices  

DOE Green Energy (OSTI)

Results of Phase II of a research program on polycrystalline thin film heterojunction solar cells are presented. Relations between processing, materials properties and device performance were studied. The analysis of these solar cells explains how minority carrier recombination at the interface and at grain boundaries can be reduced by doping of windows and absorber layers, such as in high efficiency CdTe and CuInSe{sub 2} based solar cells. The additional geometric dimension introduced by the polycrystallinity must be taken into consideration. The solar cells are limited by the diode current, caused by recombination in the space charge region. J-V characteristics of CuInSe{sub 2}/(CdZn)S cells were analyzed. Current-voltage and spectral response measurements were also made on high efficiency CdTe/CdS thin film solar cells prepared by vacuum evaporation. Cu-In bilayers were reacted with Se and H{sub 2}Se gas to form CuInSe{sub 2} films; the reaction pathways and the precursor were studied. Several approaches to fabrication of these thin film solar cells in a superstrate configuration were explored. A self-consistent picture of the effects of processing on the evolution of CdTe cells was developed.

Baron, B.N.; Birkmire, R.W.; Phillips, J.E.; Shafarman, W.N.; Hegedus, S.S.; McCandless, B.E. (Delaware Univ., Newark, DE (United States). Inst. of Energy Conversion)

1992-10-01T23:59:59.000Z

395

Gateway:América Latina/Aprender más sobre las ERNC/Seleccion de  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:América Latina/Aprender más sobre las ERNC/Seleccion de Webinars/Prospección y Estudios de Pre-Inversion/Geotermia Jump to: navigation, search School on Geothermics Fuente: International Centre for Science and High Technology Idioma: Inglés Seminar on Innovative Ideas for Geothermal Exploitation Fuente: International Centre for Science and High Technology Idioma: Inglés Workshop on Geothermal energy: resources and technology for a sustainable development Fuente: International Centre for Science and High Technology Idioma: Inglés Decision Makers' Workshop on Geothermal Energy

396

Hexagon solar power panel  

SciTech Connect

A solar energy panel comprises a support upon which silicon cells are arrayed. The cells are wafer thin and of two geometrical types, both of the same area and electrical rating, namely hexagon cells and hourglass cells. The hourglass cells are composites of half hexagons. A near perfect nesting relationship of the cells achieves a high density packing whereby optimum energy production per panel area is achieved.

Rubin, Irwin (Oxnard, CA)

1978-01-01T23:59:59.000Z

397

Heterojunction solar cells  

DOE Green Energy (OSTI)

A qualitative description of semiconductor/semiconductor heterojunction solar cells is given. The two groups of heterojunctions of greatest economic potential, very highly efficient cells for concentrator applications and moderately efficient thin film cells for flat plates, are described with examples. These examples illustrate the role of heterojunctions in surface passivation, monolithic multijunction devices, devices with semiconductors of only one conductivity type, and low-temperature fabrication techniques.

Wagner, S.

1978-01-01T23:59:59.000Z

398

Economical Pyrite-Based Solar Cells  

compete with fossil fuels (payback time of about 5-7 years). The second generation of solar cells focuses on low production costs using thin film cells, which resulted in much lower efficiency rates. The third generation of solar cells has not yet ...

399

Gateway:América Latina/Aprender más sobre las ERNC/Seleccion de  

Open Energy Info (EERE)

source source History View New Pages Recent Changes All Special Pages Semantic Search/Querying Get Involved Help Apps Datasets Community Login | Sign Up Search Gateway Edit History Facebook icon Twitter icon » Gateway:América Latina/Aprender más sobre las ERNC/Seleccion de Webinars/Prospección y Estudios de Pre-Inversion/Marina Jump to: navigation, search Marine Technology Industry Status Briefing Fuente: Clean Energy States Alliance Idioma: Inglés Marine Energy Regulatory Framework: Challenges & Solutions Fuente: Clean Energy States Alliance Idioma: Inglés Kinetic Hydropower Systems Fuente: Thayer School Idioma: Inglés Wave and Tidal Energy in the UK: 2GW by 2020? Fuente: Renewable Energy Focus Idioma: Inglés Retrieved from "http://en.openei.org/w/index.php?title=Gateway:América_Latina/Aprender_más_sobre_las_ERNC/Seleccion_de_Webinars/Prospección_y_Estudios_de_Pre-Inversion/Marina&oldid=304512"

400

Performance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief  

E-Print Network (OSTI)

of relief as light trapping structures (LTS) on thin, monocrys- talline silicon solar cells derived fromPerformance of Ultrathin Silicon Solar Microcells with Nanostructures of Relief Formed by Soft, Urbana, Illinois 61801 ABSTRACT Recently developed classes of monocrystalline silicon solar microcells

Rogers, John A.

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401

Solar: An Open Platform for Context-Aware Mobile Applications  

E-Print Network (OSTI)

Solar: An Open Platform for Context-Aware Mobile Applications Guanling Chen and David Kotz Dept the user state and the physical and computational environ- ment in which they run. Solar is a middleware into the in- frastructure, Solar allows applications to run on thin mo- bile clients more effectively

402

Cardiff University Distinguished Lecture Symposium Advances in Solar Energy  

E-Print Network (OSTI)

Cardiff University Distinguished Lecture Symposium Advances in Solar Energy Thursday 22nd March prospects for inorganic thin film photovoltaic solar cells for large scale energy generation 2:55 Dr Emyr:50 Professor James Durrant (Imperial College London, England) Photochemical approaches to solar energy

Martin, Ralph R.

403

Solar Decathlon  

NLE Websites -- All DOE Office Websites (Extended Search)

U.S. Department of Energy Solar Decathlon Sara Farrar-Nagy National Renewable Energy Laboratory sara.farrar-nagy@nrel.gov, 303-384-7514 April 3, 2013 Solar Decathlon 2009 Solar...

404

Solar Easements  

Energy.gov (U.S. Department of Energy (DOE))

Virginia's solar easement law is similar to those in effect in other states. The Virginia Solar Easements Act of 1978 allows property owners to create binding solar easements for the purpose of...

405

Definition: Solar cell | Open Energy Information  

Open Energy Info (EERE)

cell cell Jump to: navigation, search Dictionary.png Solar cell Converts light into electrical energy. Traditional solar cells are made from silicon; second-generation solar cells (thin-film solar cells) are made from amorphous silicon or nonsilicon materials such as cadmium telluride; and third-generation solar cells are being made from variety of new materials, including solar inks, solar dyes, and conductive plastics.[1][2] View on Wikipedia Wikipedia Definition A solar cell (also called a photovoltaic cell) is an electrical device that converts the energy of light directly into electricity by the photovoltaic effect. It is a form of photoelectric cell (in that its electrical characteristics-e.g. current, voltage, or resistance-vary when light is incident upon it) which, when exposed to light, can generate

406

Company Name Company Name Address Place Zip Sector Product Website  

Open Energy Info (EERE)

A2BE Carbon Capture LLC A2BE Carbon Capture LLC Panorama Ave Boulder A2BE Carbon Capture LLC A2BE Carbon Capture LLC Panorama Ave Boulder Colorado Biofuels Developing technology for producing valuable fuel and food from CO2 using algal photosynthesis and bio harvesting http www algaeatwork com Rockies Area AC Solar Inc AC Solar Inc P O Box Florence Colorado Gateway Solar Solar and wind sales for residential http www acsolar com Rockies Area ALD Nanosolutions ALD Nanosolutions E Burbank Street Unit Broomfield Colorado http www aldnanosolutions com contact php Rockies Area Abengoa Solar Abengoa Solar W th Ave Lakewood Colorado Gateway Solar Solar developer http www abengoasolar com Rockies Area Abound Solar Abound Solar Rocky Mountain Avenue Suite Loveland Colorado Gateway Solar Thin film cadmium telluride solar modules http www abound

407

A Better Steam Engine: Designing a Distributed Concentrating Solar Combined Heat and Power System  

E-Print Network (OSTI)

Environmental impact study: CSP vs. CdTe thin filmsolar CHP Rankine CSP concentrating distributed the concentrating solar power (CSP) troughs in the central

Norwood, Zachary Mills

2011-01-01T23:59:59.000Z

408

SunShot Initiative: Dye-Sensitized Solar Cells  

NLE Websites -- All DOE Office Websites (Extended Search)

Dye-Sensitized Solar Cells to Dye-Sensitized Solar Cells to someone by E-mail Share SunShot Initiative: Dye-Sensitized Solar Cells on Facebook Tweet about SunShot Initiative: Dye-Sensitized Solar Cells on Twitter Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Google Bookmark SunShot Initiative: Dye-Sensitized Solar Cells on Delicious Rank SunShot Initiative: Dye-Sensitized Solar Cells on Digg Find More places to share SunShot Initiative: Dye-Sensitized Solar Cells on AddThis.com... Concentrating Solar Power Photovoltaics Research & Development Crystalline Silicon Thin Films Multijunctions Organic Photovoltaics Dye-Sensitized Solar Cells Competitive Awards Systems Integration Balance of Systems Dye-Sensitized Solar Cells Graphic showing the seven layers of a dye-sensitized PV cell: electrode, hole conductor, dope, TiO2, blocking layer, transparent conductive oxide, and glass.

409

Primestar Solar | Open Energy Information  

Open Energy Info (EERE)

Primestar Solar Primestar Solar Jump to: navigation, search Logo: Primestar Solar Name Primestar Solar Address 14401 West 65th Way, Unit B Place Arvada, Colorado Zip 80004 Sector Solar Product Thin-Film PV Website http://www.primestarsolar.com/ Coordinates 39.816062°, -105.159927° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.816062,"lon":-105.159927,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

410

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A substrate for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3.times.10.sup.-3 ohm-cm.

Ciszek, Theodore F. (Evergreen, CO)

1998-01-01T23:59:59.000Z

411

Substrate for thin silicon solar cells  

DOE Patents (OSTI)

A substrate is described for a photovoltaic device wherein the substrate is the base upon which photosensitive material is to be grown and the substrate comprises an alloy having boron in a range from 0.1 atomic % of the alloy to 1.3 atomic % of the alloy and the substrate has a resistivity less than 3{times}10{sup {minus}3} ohm-cm. 4 figs.

Ciszek, T.F.

1998-07-28T23:59:59.000Z

412

User-Friendly Model Puts Solar Energy in Your Backyard | OpenEI Community  

Open Energy Info (EERE)

User-Friendly Model Puts Solar Energy in Your Backyard User-Friendly Model Puts Solar Energy in Your Backyard Home > Groups > OpenEI Community Central Graham7781's picture Submitted by Graham7781(1992) Super contributor 24 March, 2010 - 06:41 imported OpenEI OpenEI's Solar Gateway links to several solar decision-support tools. If you're considering a photovoltaic (PV) system for your home or property, check out the National Renewable Energy Laboratory's In My Backyard (IMBY) tool. It's quick, useful, and-let's just say it-fun. IMBY estimates the electricity that could be produced by installing a PV array (or wind turbine) at a home or business. Simply find your property on the Google Map, draw the outline of your proposed PV system, and adjust a few system inputs. Click "Run," and IMBY shows you your PV system's

413

Using radiative transfer equation to model absorption by thin Cu(In,Ga)Se2  

E-Print Network (OSTI)

on Photovoltaic Energy Conversion, K. Kurokawa ed. (Arisumi, Osaka, Japan, 2003), pp. 344­347. 10. F. Leblanc, J European Photovoltaic Solar Energy Conference, James & James ed. (Alden, Glasgow, UK, 2000), pp. 522 thin film silicon solar cells: optical model," in 16th European Photovoltaic Solar Energy Conference

414

Baker-Barry Tunnel Lighting: Evaluation of a Potential GATEWAY Demonstrations Project  

SciTech Connect

The U.S. Department of Energy is evaluating the Baker-Barry Tunnel as a potential GATEWAY Demonstrations project for deployment of solid-state lighting (SSL) technology. The National Park Service views this project as a possible proving ground and template for implementation of light-emitting diode (LED) luminaires in other tunnels, thereby expanding the estimated 40% energy savings from 132 MWh/yr to a much larger figure nationally. Most of the energy savings in this application is attributable to the instant-restrike capability of LED products and to their high tolerance for frequent on/off switching, used here to separately control either end of the tunnel during daytime hours. Some LED luminaires rival or outperform their high-intensity discharge (HID) counterparts in terms of efficacy, but options are limited, and smaller lumen packages preclude true one-for-one equivalence. However, LED products continue to improve in efficacy and affordability at a rate unmatched by other light source technologies; the estimated simple payback period of eight years (excluding installation costs and maintenance savings) can be expected to improve with time. The proposed revisions to the existing high-pressure sodium (HPS) lighting system would require slightly increased controls complexity and significantly increased luminaire types and quantities. In exchange, substantial annual savings (from reduced maintenance and energy use) would be complemented by improved quantity and quality of illumination. Although advanced lighting controls could offer additional savings, it is unclear whether such a system would prove cost-effective; this topic may be explored in future work.

Tuenge, Jason R.

2011-06-28T23:59:59.000Z

415

Global Solar Energy | Open Energy Information  

Open Energy Info (EERE)

Solar Energy Solar Energy Jump to: navigation, search Name Global Solar Energy Place Tucson, AZ Website http://www.globalsolarenergy.c References Global Solar Energy[1] Information About Partnership with NREL Partnership with NREL Yes Partnership Type Other Relationship Partnering Center within NREL National Center for Photovoltaics Partnership Year 2007 Link to project description http://www.nrel.gov/research_review/2007/deployment_thin_film.html LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! Global Solar Energy is a company located in Tucson, AZ. References ↑ "Global Solar Energy" Retrieved from "http://en.openei.org/w/index.php?title=Global_Solar_Energy&oldid=381693" Categories: Clean Energy Organizations Companies

416

Company Name Company Name Address Place Zip Sector Product Website  

Open Energy Info (EERE)

American Photovoltaics American Photovoltaics Houston Texas Gateway American Photovoltaics American Photovoltaics Houston Texas Gateway Solar Will manufacture thin film solar modules http apv us com Texas Area C Voltaics C Voltaics Cullen Blvd Science and Research Building Houston Texas Gateway Solar Novel manufacturing process for solar cells with initial focus on OPV http www c voltaics com Texas Area CMNA Power CMNA Power Technology Blvd Austin Texas Wind energy Developing non turbine wind power technology http www cmnapower com Texas Area CPower Texas CPower Texas Congress Avenue Suite Austin Texas Efficiency Provides various energy efficiency management services http www cpowered com Texas Area Celestial Power Celestial Power Hermitage Drive Austin Texas Gateway Solar Solar energy contractor http celestialpower biz Texas Area

417

CARS of Thin Films  

Science Conference Proceedings (OSTI)

... as a thin film diagnostic. Surface enhanced Raman scattering, SERS, has been used to probe the interfacial region of thin polymer films on metal ...

2012-10-02T23:59:59.000Z

418

Ascent Solar | Open Energy Information  

Open Energy Info (EERE)

Ascent Solar Ascent Solar Name Ascent Solar Address 12300 Grant Street Place Thornton, Colorado Zip 80241 Sector Solar Product Thin-Film PV Year founded 2005 Number of employees 51-200 Website http://www.ascentsolar.com/ Coordinates 39.920403°, -104.983924° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.920403,"lon":-104.983924,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

419

Four-Stream Isosector Approximation for Solar Radiative Transfer  

Science Conference Proceedings (OSTI)

For radiative transfer in a thin atmosphere, an analytical four-stream isosector approximation for solar radiative transfer is presented. This approximation method is based on the assumption of four spherical sectors of isotropic intensities. ...

J. Li; J. S. Dobbie

1998-02-01T23:59:59.000Z

420

Bosch Solar Sustainable Energy Technologies JV | Open Energy...  

Open Energy Info (EERE)

JV Jump to: navigation, search Name Bosch Solar & Sustainable Energy Technologies JV Place Ontario, Canada Product Canada-based JV to distribute thin-film PV systems in the Ontario...

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
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to obtain the most current and comprehensive results.


421

CIGS-Based Solar Cells Prepared from Electrodeposited Precursor...  

NLE Websites -- All DOE Office Websites (Extended Search)

CIGS absorbers using several techniques, including vacuum and non-vacuum technologies. Thin-film solar cell devices based on PVD CIGS have demonstrated an efficiency of 20.1%. 1...

422

SolarMorph Pte Ltd | Open Energy Information  

Open Energy Info (EERE)

Pte Ltd Place Singapore Product Singapore-based manufacturer of amorphous silicon thin-film products. References SolarMorph Pte Ltd1 LinkedIn Connections CrunchBase...

423

Solar Neutrinos  

NLE Websites -- All DOE Office Websites (Extended Search)

Solar Neutrinos at the Conclusion of the Sudbury Neutrino Observatory Noah Oblath April 22, 2008 The study of solar neutrinos began with the idea that one could use the neutrinos...

424

Solar Easements  

Energy.gov (U.S. Department of Energy (DOE))

In determining that the use of solar energy "can help reduce the nation's reliance upon imported fuels," Georgia encourages the development of solar-energy systems. Accordingly, under Georgia's...

425

Solar Easements  

Energy.gov (U.S. Department of Energy (DOE))

Alaska's solar easement provisions are similar to those in many other states. They do not create an automatic right to sunlight. Rather, they allow parties to voluntarily enter into solar...

426

Solar Easements  

Energy.gov (U.S. Department of Energy (DOE))

Idahos solar easement provisions allow for the access rights to sunlight for a solar energy device. The easement is transferred with the property title. Only a few Idaho communities have passed...

427

Solar collectors  

SciTech Connect

Practical applications of solar energy in commercial, industrial and institutional buildings are considered. Two main types of solar collectors are described: flat plate collectors and concentrating collectors. Efficiency of air and hydronic collectors among the flat plate types are compared. Also several concentrators are described, including their sun tracking mechanisms. Descriptions of some recent solar installations are presented and a list representing the cross section of solar collector manufacturers is furnished.

Cassidy, V.M.

1981-11-01T23:59:59.000Z

428

Solar project  

SciTech Connect

A solar laundry was installed on a college campus in South Carolina, including two separate systems installed in parallel. (LEW)

1983-01-01T23:59:59.000Z

429

Solar synthesis of advanced materials: A solar industrial program initiative  

SciTech Connect

This is an initiative for accelerating the use of solar energy in the advanced materials manufacturing industry in the United States. The initiative will be based on government-industry collaborations that will develop the technology and help US industry compete in the rapidly expanding global advanced materials marketplace. Breakthroughs in solar technology over the last 5 years have created exceptional new tools for developing advanced materials. Concentrated sunlight from solar furnaces can produce intensities that approach those on the surface of the sun and can generate temperatures well over 2000{degrees}C. Very thin layers of illuminated surfaces can be driven to remarkably high temperatures in a fraction of a second. Concentrated solar energy can be delivered over large areas, allowing for rapid processing and high production rates. By using this technology, researchers are transforming low-cost raw materials into high-performance products. Solar synthesis of advanced materials uses bulk materials and energy more efficiently, lowers processing costs, and reduces the need for strategic materials -- all with a technology that does not harm the environment. The Solar Industrial Program has built a unique, world class solar furnace at NREL to help meet the growing need for applied research in advanced materials. Many new advanced materials processes have been successfully demonstrated in this facility, including the following: Metalorganic deposition, ceramic powders, diamond-like carbon materials, rapid heat treating, and cladding (hard coating).

Lewandowski, A.

1992-06-01T23:59:59.000Z

430

Rapid Deposition Technology Holds the Key for the World's Largest Solar Manufacturer (Fact Sheet)  

SciTech Connect

Thanks in part to years of collaboration with the National Renewable Energy Laboratory (NREL), a manufacturer of thin-film solar modules has grown from a small garage-type operation to become the world's largest manufacturer of solar modules. First Solar, Inc. now manufactures cadmium telluride (CdTe) solar modules throughout the world, but it began in Ohio as a small company called Solar Cells, Inc.

Not Available

2010-10-01T23:59:59.000Z

431

Solar powered desalination system  

E-Print Network (OSTI)

Desalination Systems Developers MIT BARC IMB Power Solar PVcells Solar PV cells 10 MW solar farm Solar pond FranciscoSolar Energy: PEC vs. PV Solar energy is just as important

Mateo, Tiffany Alisa

2011-01-01T23:59:59.000Z

432

Department of Energy Offers Support for Arizona Solar Project | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Arizona Solar Project Arizona Solar Project Department of Energy Offers Support for Arizona Solar Project January 20, 2011 - 12:00am Addthis Washington D.C. --- U.S. Energy Secretary Steven Chu today announced the offer of a conditional commitment to Agua Caliente Solar, LLC for a loan guarantee of up to $967 million. The loan guarantee will support the construction of a 290-megawatt photovoltaic solar generating facility located in Yuma County, Arizona that will use thin film solar panels from First Solar, Inc. The project sponsor, NRG Solar, estimates the project will be the largest photovoltaic generation facility in the world when it is completed. "Solar projects like this are helping the U.S. to compete globally for the clean energy jobs of today and the future," said Secretary Chu. "The

433

Department of Energy Offers Support for Arizona Solar Project | Department  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Support for Arizona Solar Project Support for Arizona Solar Project Department of Energy Offers Support for Arizona Solar Project January 20, 2011 - 12:00am Addthis Washington D.C. --- U.S. Energy Secretary Steven Chu today announced the offer of a conditional commitment to Agua Caliente Solar, LLC for a loan guarantee of up to $967 million. The loan guarantee will support the construction of a 290-megawatt photovoltaic solar generating facility located in Yuma County, Arizona that will use thin film solar panels from First Solar, Inc. The project sponsor, NRG Solar, estimates the project will be the largest photovoltaic generation facility in the world when it is completed. "Solar projects like this are helping the U.S. to compete globally for the clean energy jobs of today and the future," said Secretary Chu. "The

434

Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar | Open Energy  

Open Energy Info (EERE)

Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar Nantong Qiangsheng Photovoltaic Technology Co Ltd QS Solar Jump to: navigation, search Name Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar) Place Shanghai Municipality, China Zip 200336 Sector Solar Product Chinese amorphous thin-film solar cell maker. References Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar) is a company located in Shanghai Municipality, China . References ↑ "[ Nantong Qiangsheng Photovoltaic Technology Co Ltd (QS Solar)]" Retrieved from "http://en.openei.org/w/index.php?title=Nantong_Qiangsheng_Photovoltaic_Technology_Co_Ltd_QS_Solar&oldid=349037

435

Institute of Photo Electronic Thin Film Devices and Technology of Nankai  

Open Energy Info (EERE)

Electronic Thin Film Devices and Technology of Nankai Electronic Thin Film Devices and Technology of Nankai University Jump to: navigation, search Name Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University Place Tianjin Municipality, China Zip 300071 Sector Solar Product A thin-film solar cell research institute in China. References Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University is a company located in Tianjin Municipality, China . References ↑ "Institute of Photo-Electronic Thin Film Devices and Technology of Nankai University"

436

SOLAR REFLE TION PANELS  

Unlike other solar collectors that are known to lose solar reflectivity due to issues with their design, the solar collector

437

Solar Optics  

DOE Green Energy (OSTI)

Solar opacities are presented from the center of the Sun to the photosphere. The temperatures, densities and hydrogen mass fractions are taken from the standard solar model. For the heavy element abundances the Grevesse mixture is used. In the solar interior photoabsorption is dominated by free-free absorption and they compare two sets of opacities based on two different models for the inverse bremsstrahlung. The radiative luminosities calculated from the two sets of opacities are compared with those predicted by previous models of the standard solar model and also with the known luminosity of the Sun. pressures, specific heats and the speed of sound in the solar plasma are also presented.

Rozsnyai, B.F.

2000-10-04T23:59:59.000Z

438

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Annual subcontract report, 1 January 1990--31 December 1990  

DOE Green Energy (OSTI)

This report describes work to develop a highly accurate numerical model for CuInSe{sub 2} and CdTe solar cells. ADEPT (A Device Emulation Program and Toolbox), a one-dimensional semiconductor device simulation code developed at Purdue University, was used as the basis of this model. An additional objective was to use ADEPT to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. The work is being performed in two phases. The first phase involved collecting device performance parameters, cell structure information, and material parameters. This information was used to construct the basic models to simulate CuInSe{sub 2} and CdTe solar cells. This report is a tabulation of information gathered during the first phase of this project on the performance of existing CuInSe{sub 2} and CdTe solar cells, the material properties of CuInSr{sub 2}, CdTe, and CdS, and the optical absorption properties of CuInSe{sub 2}, CdTe, and CdS. The second phase will entail further development and the release of a version of ADEPT tailored to CuInSe{sub 2} and CdTe solar cells that can be run on a personal computer. In addition, ADEPT will be used to analyze the performance of existing and proposed CuInSe{sub 2} and CdTe solar cell structures. 110 refs.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

1992-04-01T23:59:59.000Z

439

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Administration Other Agencies You are here Home Energy Sources Renewables Solar Solar July 12, 2013 California Solar Initiative - Single-Family Affordable Solar...

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
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We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

21, 2013 Solar Energy Resources Solar radiation, often called the solar resource, is a general term for the electromagnetic radiation emitted by the sun. Solar radiation can be...

442

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network (OSTI)

Estimating Unmeasured Solar Radiation Quantities . . . . . .Weather Data . . . . . , . , . . . . . . . . . .Solar DataB. l'he Solar Constant. . . . . . C. Solar Time and Standard

Berdahl, P.

2010-01-01T23:59:59.000Z

443

Solar Power  

NLE Websites -- All DOE Office Websites (Extended Search)

Solar Power Solar Power Project Opportunities Abound in the Region The WIPP site is receives abundant solar energy with 6-7 kWh/sq meter power production potential As the accompanying map of New Mexico shows, the WIPP site enjoys abundant year-round sunshine. With an average solar power production potential of 6-7 kWh/sq meter per day, one exciting project being studied for location at WIPP is a 30-50 MW Solar Power Tower: The American Solar Energy Society (ASES) is is a national trade association promoting solar energy as a clean source of electricity, and provides a comprehensive resource for additional information. DOE's Office of Energy Efficiency and Renewable Energy is also a comprehensive resource for more information on renewable energy.

444

Annealed CVD molybdenum thin film surface  

DOE Patents (OSTI)

Molybdenum thin films deposited by pyrolytic decomposition of Mo(CO).sub.6 attain, after anneal in a reducing atmosphere at temperatures greater than 700.degree. C., infrared reflectance values greater than reflectance of supersmooth bulk molybdenum. Black molybdenum films deposited under oxidizing conditions and annealed, when covered with an anti-reflecting coating, approach the ideal solar collector characteristic of visible light absorber and infrared energy reflector.

Carver, Gary E. (Tucson, AZ); Seraphin, Bernhard O. (Tucson, AZ)

1984-01-01T23:59:59.000Z

445

Development of a computer model for polycrystalline thin-film CuInSe{sub 2} and CdTe solar cells. Final subcontract report, 1 January 1991--31 December 1991  

DOE Green Energy (OSTI)

This report describes work to develop an accurate numerical model for CuInSe{sub 2} (CIS) and CdTe-based solar cells capable of running on a personal computer. Such a model will aid researchers in designing and analyzing CIS- and CdTe-based solar cells. ADEPT (A Device Emulation Pregrain and Tool) was used as the basis for this model. An additional objective of this research was to use the models developed to analyze the performance of existing and proposed CIS- and CdTe-based solar cells. The development of accurate numerical models for CIS- and CdTe-based solar cells required the compilation of cell performance data (for use in model verification) and the compilation of measurements of material parameters. The development of the numerical models involved implementing the various physical models appropriate to CIS and CdTe, as well as some common window. A version of the model capable of running on an IBM-comparable personal computer was developed (primary code development is on a SUN workstation). A user-friendly interface with pop-up menus is continuing to be developed for release with the IBM-compatible model.

Gray, J.L.; Schwartz, R.J.; Lee, Y.J. [Purdue Univ., Lafayette, IN (United States)

1992-09-01T23:59:59.000Z

446

California Solar Initiative - Solar Thermal Program | Department...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar Thermal Program California Solar Initiative - Solar Thermal Program Eligibility Commercial Fed. Government Industrial Local Government Low-Income Residential Multi-Family...

447

Defect engineering of cuprous oxide thin-films for photovoltaic applications  

E-Print Network (OSTI)

Thin-film solar cells are promising for renewable-energy applications due to their low material usage and inexpensive manufacturing potential, making them compatible with terawatts-level deployment. Cuprous oxide (Cu?O) ...

Lee, Yun Seog

2013-01-01T23:59:59.000Z

448

Device Physics of Nanoscale Interdigitated Solar Cells (Poster)  

Science Conference Proceedings (OSTI)

Nanoscale interdigitated solar cell device architectures are being investigated for organic and inorganic solar cell devices. Due to the inherent complexity of these device designs quantitative modeling is needed to understand the device physics. Theoretical concepts have been proposed that nanodomains of different phases may form in polycrystalline CIGS solar cells. These theories propose that the nanodomains may form complex 3D intertwined p-n networks that enhance device performance.Recent experimental evidence offers some support for the existence of nanodomains in CIGS thin films. This study utilizes CIGS solar cells to examine general and CIGS-specific concepts in nanoscale interdigitated solar cells.

Metzger, W.; Levi, D.

2008-05-01T23:59:59.000Z

449

Third-Generation Solar Cells Using Optical Rectenna  

compete with fossil fuels (Payback time of about 5-7 years). The second generation of solar cells focuses on low production costs using thin film cells, which resulted in much lower efficiency rates. The thirdgeneration of solar cells has not yet ...

450

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Another SunShot Success: GE to Make PrimeStar Solar Panels at New Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant Another SunShot Success: GE to Make PrimeStar Solar Panels at New Colorado Plant October 14, 2011 - 4:03pm Addthis Thin film solar panels produced by General Electric’s PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Thin film solar panels produced by General Electric's PrimeStar in Arvada, Colorado | Image courtesy of Edelman. Minh Le Minh Le Program Manager, Solar Program Yesterday, General Electric (GE) announced that it will build a new thin-film photovoltaic (PV) solar panel manufacturing facility in Aurora, Colorado, to produce highly-efficient, low-cost panels that are based on innovative technology originally developed at the Energy Department's

451

National Aeronautics and Space Administration Ultra-Light, Low-Cost Solar Concentrator Offers  

E-Print Network (OSTI)

Fresnel lenses for optical concentration, minimizing solar cell area, mass, and cost. The SLA has been of solar energy technologies and sustainable daylighting solutions. The company designs, manufacturers lenses focusing sunlight onto multi-junction solar cells mounted to thin carbon-fiber composite radiators

452

Stabilization of solar films against hi temperature deactivation  

DOE Patents (OSTI)

A multi-layer solar energy collector of improved stability comprising: (1) a solar absorptive film consisting essentially of copper oxide, cobalt oxide and manganese oxide; (2) a substrate of quartz, silicate glass or a stainless steel; and (3) an interlayer of platinum, plus a method for preparing a thermally stable multi-layered solar collector, in which the absorptive layer is undercoated with a thin film of platinum to obtain a stable conductor-dielectric tandem.

Jefferson, Clinton F. (Millburn, NJ)

1984-03-20T23:59:59.000Z

453

Solar News  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

news Office of Energy Efficiency & Renewable news Office of Energy Efficiency & Renewable Energy Forrestal Building 1000 Independence Avenue, SW Washington, DC 20585 en Energy Department Announces $19 Million to Drive Down Solar Soft Costs, Increase Hardware Efficiency http://energy.gov/eere/articles/energy-department-announces-19-million-drive-down-solar-soft-costs-increase-hardware solar-soft-costs-increase-hardware" class="title-link">Energy Department Announces $19 Million to Drive Down Solar Soft Costs, Increase Hardware Efficiency

454

Solar Decathlon  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

U.S. Department of Energy U.S. Department of Energy Solar Decathlon Sara Farrar-Nagy National Renewable Energy Laboratory sara.farrar-nagy@nrel.gov, 303-384-7514 April 3, 2013 Solar Decathlon 2009 Solar Decathlon 2011 Solar Decathlon 2013 & XPO Washington, D.C. Washington, D.C. Irvine, California 2 | Building Technologies Office eere.energy.gov Purpose & Objectives Problem Statement: How to provide workforce training, improve building science instruction, foster innovation in whole-building design, and

455

Solar Cells  

Science Conference Proceedings (OSTI)

Mar 5, 2013 ... Here we are using microwaves for increasing the surface area of titania nanopowders for energy based applications like dye sensitized solar...

456

Heterojunction solar cell with passivated emitter surface  

DOE Patents (OSTI)

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

Olson, J.M.; Kurtz, S.R.

1994-05-31T23:59:59.000Z

457

Heterojunction solar cell with passivated emitter surface  

DOE Patents (OSTI)

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Olson, Jerry M. (Lakewood, CO); Kurtz, Sarah R. (Golden, CO)

1994-01-01T23:59:59.000Z

458

DOE Solar Decathlon: Solar Decathlon Videos  

NLE Websites -- All DOE Office Websites (Extended Search)

Consumer Workshops Consumer Workshops Building Industry Workshops Technical Resources Sponsors Where Are the Houses Now? Quick Links Solar Decathlon Home Solar Decathlon 2011 Solar Decathlon 2009 Solar Decathlon 2007 Solar Decathlon 2005 Solar Decathlon 2002 Solar Decathlon 2011 Solar Decathlon Videos For video of the U.S. Department of Energy Solar Decathlon 2011, see the collections listed below or visit the U.S. Department of Energy Solar Decathlon YouTube Channel. General Solar Decathlon Videos Watch these videos to learn about the Solar Decathlon competition and event. Solar Decathlon House Video Tours Learn about each of the U.S. Department of Energy Solar Decathlon teams and their houses in these video tours. Solar Decathlon Team-Produced Videos Watch videos produced by the teams themselves for the Solar Decathlon

459

Gadir Solar | Open Energy Information  

Open Energy Info (EERE)

Gadir Solar Gadir Solar Jump to: navigation, search Name Gadir Solar Place Madrid, Spain Zip 28001 Product Madrid-based manufacturer of thin-film silicon PV modules. Coordinates 40.4203°, -3.705774° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.4203,"lon":-3.705774,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

460

Magnolia Solar | Open Energy Information  

Open Energy Info (EERE)

Solar Solar Jump to: navigation, search Name Magnolia Solar Place Woburn, Massachusetts Zip 1801 Product Massachusetts-based thin-film PV startup. Coordinates 42.479195°, -71.150604° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":42.479195,"lon":-71.150604,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Solar Array Ventures Inc | Open Energy Information  

Open Energy Info (EERE)

Inc Inc Jump to: navigation, search Name Solar Array Ventures Inc Place Austin, Texas Product Texas-based start-up thin film PV panel maker, which plans to develop five production plants over the next five years, with four of those facilities located at a site in New Mexico. References Solar Array Ventures Inc[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Solar Array Ventures Inc is a company located in Austin, Texas . References ↑ "Solar Array Ventures Inc" Retrieved from "http://en.openei.org/w/index.php?title=Solar_Array_Ventures_Inc&oldid=351246" Categories: Clean Energy Organizations Companies Organizations Stubs What links here Related changes

462

FTL Solar LLC | Open Energy Information  

Open Energy Info (EERE)

FTL Solar LLC FTL Solar LLC Jump to: navigation, search Name FTL Solar LLC Address 44 East 32nd Street, Suite 350 Place New York, New York Zip 10016 Sector Solar Product Creator of flexible, tensile structures integrated with thin film solar cells Website http://www.ftlsolar.com/ Coordinates 40.6498136°, -73.9475554° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":40.6498136,"lon":-73.9475554,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

463

Rapid Deposition Technology Holds the Key for the World's Largest Solar Manufacturer (Fact Sheet)  

SciTech Connect

Thanks in part to years of collaboration with the National Renewable Energy Laboratory (NREL), a manufacturer of thin-film solar modules has grown from a small garage-type operation to become the world's largest manufacturer of solar modules. First Solar, Inc. now manufactures cadmium telluride (CdTe) solar modules throughout the world, but it began in Ohio as a small company called Solar Cells, Inc.

2010-10-01T23:59:59.000Z

464

Solar PST | Open Energy Information  

Open Energy Info (EERE)

Solar PST Jump to: navigation, search Name Solar PST Place Bergondo, Spain Zip 15 165 Sector Solar Product Spanish company producing thermodynamic solar panels. References Solar...

465

Solar ponds  

DOE Green Energy (OSTI)

The different types of solar ponds are described, including the nonconvecting salt gradient pond and various saltless pond designs. Then the availability and cost of salts for salt gradient ponds are discussed and costs are compared. A simple computational model is developed to approximate solar pond performance. This model is later used to size solar ponds for district heating and industrial process heat applications. For district heating, ponds are sized to provide space conditioning for a group of homes, in different regions of the United States. Size requirement is on the order of one acre for a group of 25 to 50 homes. An economic analysis is performed of solar ponds used in two industrial process heat applications. The analysis finds that solar ponds are competitive when conventional heat sources are priced at $5 per million Btu and expected to rise in price at a rate of 10% per year. The application of solar ponds to the generation of electricity is also discussed. Total solar pond potential for displacing conventional energy sources is estimated in the range of from one to six quadrillion Btu per year in the near and intermediate future.

Jayadev, T.S.; Edesess, M.

1980-04-01T23:59:59.000Z

466

Solar Two  

DOE Green Energy (OSTI)

Solar Two is a concentrating solar power plant that can supply electric power on demand to the local utility, Southern California Edison Company. It can do so because it operates not only during sunny parts of the day, but it can store enough thermal energy from the sun to operate during cloudy periods and after dark, for up to three hours, at its rated output of 10 megawatts (MW). For the first time ever, a utility scale solar power plant can supply electricity when the utility needs it most, to satisfy the energy requirements of its customers.

Not Available

1998-04-01T23:59:59.000Z

467

NREL: Energy Analysis - Crystalline Silicon and Thin Film Photovoltaic  

NLE Websites -- All DOE Office Websites (Extended Search)

Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Crystalline Silicon and Thin Film Photovoltaic Results - Life Cycle Assessment Harmonization Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics (Fact Sheet) Cover of the Life Cycle Greenhouse Gas Emissions from Solar Photovoltaics factsheet Download the Fact Sheet Over the last 30 years, hundreds of life cycle assessments (LCAs) have been conducted and published for a variety of residential and utility-scale solar photovoltaic (PV) systems with wide-ranging results. The inconsistencies in these results can be attributed to the technologies evaluated-such as differing system designs, real-world versus conceptual systems, or technology improvements over time-and life cycle assessment methods and assumptions. To better understand greenhouse gas (GHG) emissions from commercial

468

Progress in passive solar energy systems. Volume 8. Part 1  

DOE Green Energy (OSTI)

This book presents the papers given at a conference sponsored by the US DOE, the Solar Energy Research Institute, SolarVision, Inc., and the Southern California Solar Energy Society. The topics considered at the conference included sizing solar energy systems for agricultural applications, a farm scale ethanol production plant, the EEC wind energy RandD program, the passive solar performance assessment of an earth-sheltered house, the ARCO 1 MW photovoltaic power plant, the performance of a dendritic web photovoltaic module, second generation point focused concentrators, linear fresnel lens concentrating photovoltaic collectors, photovoltaic conversion efficiency, amorphous silicon thin film solar cells, a photovoltaic system for a shopping center, photovoltaic power generation for the utility industry, spectral solar radiation, and the analysis of insolation data.

Hayes, J.; Andrejko, D.A.

1983-01-01T23:59:59.000Z

469

Sinocome Solar aka Perfect Field Investment | Open Energy Information  

Open Energy Info (EERE)

Solar aka Perfect Field Investment Solar aka Perfect Field Investment Jump to: navigation, search Name Sinocome Solar (aka Perfect Field Investment) Place China Product Chinese manufacturer of amorphous silicon thin-film cells and modules using technology patents owned by the Target Group, also a Chinese firm. References Sinocome Solar (aka Perfect Field Investment)[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. Sinocome Solar (aka Perfect Field Investment) is a company located in China . References ↑ "[ Sinocome Solar (aka Perfect Field Investment)]" Retrieved from "http://en.openei.org/w/index.php?title=Sinocome_Solar_aka_Perfect_Field_Investment&oldid=351122" Categories:

470

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network (OSTI)

The University of Wisconsin Interactive Solar Heating DesignProgram, , , , c, Solar Heating of Buildings and DomesticProperty Standards for Solar Heating and Domestic Hot Water

Berdahl, P.

2010-01-01T23:59:59.000Z

471

CALIFORNIA SOLAR DATA MANUAL  

E-Print Network (OSTI)

Program, , , , c, Solar Heating of Buildings and DomesticR.L. (1976): Solar Heating of Buildings and Domestic Hotthe costs. c. SOLAR HEATING OF BUILDINGS AND DOMESTIC HOT

Berdahl, P.

2010-01-01T23:59:59.000Z

472

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Administration Other Agencies You are here Home Energy Sources Renewables Solar Solar July 12, 2013 Austin Energy - Value of Solar Residential Rate (Texas) Austin...

473

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Administration Other Agencies You are here Home Energy Sources Renewables Solar Solar July 12, 2013 City of Tallahassee Utilities - Solar Water Heating Rebate The...

474

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Administration Other Agencies You are here Home Energy Sources Renewables Solar Solar July 12, 2013 Austin Utilities - Solar Rebate Program Austin Utilities provides...

475

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Administration Other Agencies You are here Home Energy Sources Renewables Solar Solar July 12, 2013 Commonwealth Solar Hot Water Commercial Program Feasibility study...

476

DOE Solar Decathlon: Visit  

NLE Websites -- All DOE Office Websites (Extended Search)

Department of Energy Solar Decathlon 2013 at the Orange Country Great Park in Irvine, California The Solar Decathlon houses and surrounding Solar Decathlon village are open to...

477

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

October 8, 2009 DOE Announces 87 Million in Funding to Support Solar Energy Technologies Projects Aim to Accelerate Adoption of Solar Energy and Develop Solar Workforce September...

478

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

contracts which must be entered into in order to ensure uninterrupted solar access for solar energy devices. Solar easement agreements are required at a minimum to contain...

479

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

16, 2013 Solar Energy Technologies Solar energy technologies produce electricity from the energy of the sun. Small solar energy systems can provide electricity for homes,...

480

Solar | Department of Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Solar, Wind, and Energy Efficiency Easements and Rights Laws Colorado's solar access laws, which date back to 1979, prohibit any residential covenants that restrict solar access....

Note: This page contains sample records for the topic "gateway solar thin" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


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