Sample records for gates pressure point

  1. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01T23:59:59.000Z

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  2. Analysis of Strategic Petroleum Reserve bubble point pressure data

    SciTech Connect (OSTI)

    Lott, S.E.

    1996-05-01T23:59:59.000Z

    Mathematical models are presented to predict the bubble pressure for 481 cavern oil samples withdrawn from the Bryan Mound, West Hackberry, Big Hill, and Bayou Choctaw Strategic Petroleum Reserve sites. The predicted bubble point pressure is compared to experimentally measured bubble point pressure to resolve potential sources of error introduced to the experimental analysis. In order to gain a higher level of confidence in the measurement of the bubble point pressure, a stochastic analysis of the data is recommended in the future.

  3. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S. [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Kodera, T., E-mail: kodera.t.ac@m.titech.ac.jp [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-25, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Takeda, K.; Obata, T. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tarucha, S. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science (CEMS), 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan)

    2014-05-28T23:59:59.000Z

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  4. Correlation of black oil properties at pressures below the bubble-point

    E-Print Network [OSTI]

    Velarde, Jorge Javier

    1996-01-01T23:59:59.000Z

    correlations: Bubble-point pressure, Pb *Solution gas-oil-ratio at pressures below the bubble-point, Rs ³Oil formation volume factor at pressures below the bubble-point, B0 In this work we provide a detailed analysis of the most popular correlations...

  5. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21T23:59:59.000Z

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?°C.

  6. A new vapor pressure equation originating at the critical point

    E-Print Network [OSTI]

    Nuckols, James William

    1976-01-01T23:59:59.000Z

    - tence curve has been developed from critical scaling theory. The agreement between published vapor pressures and vapor pressures predicted by this equation is very good, especially in the critical region where many other vapor pressure equations fail... vapor pressure data f' or Ar, N2, 02H6, and H20, w1th the parameters ai to a being determined by an unweighted least squares curve 5 fit. The method of least squares has been described adequately elsewhere, e. g. Wylie (1966), and the theory w111...

  7. Thermodynamic analysis and experimental study of the effect of atmospheric pressure on the ice point

    SciTech Connect (OSTI)

    Harvey, A. H. [Thermophysical Properties Division National Institute of Standards and Technology, Boulder, Colorado (United States)] [Thermophysical Properties Division National Institute of Standards and Technology, Boulder, Colorado (United States); McLinden, M. O. [Thermophysical Properties Division, National Institute of Standards and Technology, Boulder, Colorado (United States)] [Thermophysical Properties Division, National Institute of Standards and Technology, Boulder, Colorado (United States); Tew, W. L. [Sensor Science Division National Institute of Standards and Technology, Gaithersburg, Maryland (United States)] [Sensor Science Division National Institute of Standards and Technology, Gaithersburg, Maryland (United States)

    2013-09-11T23:59:59.000Z

    We present a detailed thermodynamic analysis of the temperature of the ice point as a function of atmospheric pressure. This analysis makes use of accurate international standards for the properties of water and ice, and of available high-accuracy data for the Henry's constants of atmospheric gases in liquid water. The result is an ice point of 273.150 019(5) K at standard atmospheric pressure, with higher ice-point temperatures (varying nearly linearly with pressure) at lower pressures. The effect of varying ambient CO{sub 2} concentration is analyzed and found to be significant in comparison to other uncertainties in the model. The thermodynamic analysis is compared with experimental measurements of the temperature difference between the ice point and the triple point of water performed at elevations ranging from 145 m to 4302 m, with atmospheric pressures from 101 kPa to 60 kPa.

  8. Vapor pressure and boiling point elevation of slash pine black liquors: Predictive models with statistical approach

    SciTech Connect (OSTI)

    Zaman, A.A.; McNally, T.W.; Fricke, A.L. [Univ. of Florida, Gainesville, FL (United States)] [Univ. of Florida, Gainesville, FL (United States)

    1998-01-01T23:59:59.000Z

    Vapor-liquid equilibria and boiling point elevation of slash pine kraft black liquors over a wide range of solid concentrations (up to 85% solids) has been studied. The liquors are from a statistically designed pulping experiment for pulping slash pine in a pilot scale digester with four cooking variables of effective alkali, sulfidity, cooking time, and cooking temperature. It was found that boiling point elevation of black liquors is pressure dependent, and this dependency is more significant at higher solids concentrations. The boiling point elevation data at different solids contents (at a fixed pressure) were correlated to the dissolved solids (S/(1 {minus} S)) in black liquor. Due to the solubility limit of some of the salts in black liquor, a change in the slope of the boiling point elevation as a function of the dissolved solids was observed at a concentration of around 65% solids. An empirical method was developed to describe the boiling point elevation of each liquor as a function of pressure and solids mass fraction. The boiling point elevation of slash pine black liquors was correlated quantitatively to the pulping variables, using different statistical procedures. These predictive models can be applied to determine the boiling point rise (and boiling point) of slash pine black liquors at processing conditions from the knowledge of pulping variables. The results are presented, and their utility is discussed.

  9. Ballistic Imaging of High-Pressure Fuel Sprays using Incoherent, Ultra- short Pulsed Illumination with an Ultrafast OKE-based Time Gating

    E-Print Network [OSTI]

    Purwar, Harsh; Rozé, Claude; Blaisot, Jean-Bernard

    2015-01-01T23:59:59.000Z

    We present an optical Kerr effect based time-gate with the collinear incidence of the pump and probe beams at the Kerr medium, liquid carbon disulfide, for ballistic imaging of the high-pressure fuel sprays. The probe pulse used to illuminate the object under study is extracted from the supercontinuum generated by tightly focusing intense femtosecond laser pulses inside water, thereby destroying their coherence. The optical imaging spatial resolution and gate timings are investigated and compared with a similar setup without supercontinuum generation, where the probe is still coherent. And finally, a few ballistic images of the fuel sprays using coherent and incoherent illumination with the proposed time-gate are presented and compared qualitatively.

  10. High-Pressure Micellar Solutions of Polystyrene-block-Polybutadiene and Polystyrene-block-Polyisoprene Solutions in Propane Exhibit Cloud-Pressure Reduction and Distinct Micellization End Points

    SciTech Connect (OSTI)

    Winoto, Winoto [University of Wyoming, Laramie; Radosz, Maciej [University of Wyoming, Laramie; Tan, Sugata [University of Wyoming, Laramie; Hong, Kunlun [ORNL; Mays, Jimmy [ORNL

    2009-01-01T23:59:59.000Z

    Micellar solutions of polystyrene-block-polybutadiene and polystyrene-block-polyisoprene in propane are found to exhibit significantly lower cloud pressures than the corresponding hypothetical non-micellar solutions. Such a cloud-pressure reduction indicates the extent to which micelle formation enhances the apparent diblock solubility in near-critical and hence compressible propane. Pressure-temperature points beyond which no micelles can be formed, referred to as the micellization end points, are found to depend on the block type, size and ratio, and on the polymer concentration. For a given pressure, the micellization end-point temperature corresponds to the "critical micelle temperature." The cloud-pressure reduction and the micellization end point measured for styrene-diene diblocks in propane should be characteristic of all amphiphilic diblock copolymer solutions that form micelles in compressible solvents.

  11. Comparison of average and point capillary pressure-saturation functions determined by steady-state centrifugation

    SciTech Connect (OSTI)

    Cropper, Clark [University of Tennessee, Knoxville (UTK); Perfect, Edmund [ORNL; van den Berg, Dr. Elmer [University of Tennessee, Knoxville (UTK); Mayes, Melanie [ORNL

    2010-01-01T23:59:59.000Z

    The capillary pressure-saturation function can be determined from centrifuge drainage experiments. In soil physics, the data resulting from such experiments are usually analyzed by the 'averaging method.' In this approach, average relative saturation, , is expressed as a function of average capillary pressure, <{psi}>, i.e., (<{psi}>). In contrast, the capillary pressure-saturation function at a physical point, i.e., S({psi}), has been extracted from similar experiments in petrophysics using the 'integral method.' The purpose of this study was to introduce the integral method applied to centrifuge experiments to a soil physics audience and to compare S({psi}) and (<{psi}>) functions, as parameterized by the Brooks-Corey and van Genuchten equations, for 18 samples drawn from a range of porous media (i.e., Berea sandstone, glass beads, and Hanford sediments). Steady-state centrifuge experiments were performed on preconsolidated samples with a URC-628 Ultra-Rock Core centrifuge. The angular velocity and outflow data sets were then analyzed using both the averaging and integral methods. The results show that the averaging method smoothes out the drainage process, yielding less steep capillary pressure-saturation functions relative to the corresponding point-based curves. Maximum deviations in saturation between the two methods ranged from 0.08 to 0.28 and generally occurred at low suctions. These discrepancies can lead to inaccurate predictions of other hydraulic properties such as the relative permeability function. Therefore, we strongly recommend use of the integral method instead of the averaging method when determining the capillary pressure-saturation function by steady-state centrifugation. This method can be successfully implemented using either the van Genuchten or Brooks-Corey functions, although the latter provides a more physically precise description of air entry at a physical point.

  12. Pressure vessel embrittlement predictions based on a composite model of copper precipitation and point defect clustering

    SciTech Connect (OSTI)

    Stoller, R.E. [Oak Ridge National Lab., TN (United States). Metals and Ceramics Div.

    1996-12-31T23:59:59.000Z

    A theoretical model is used to investigate the relative importance of point defect clusters (PDC) and copper-rich precipitates in reactor pressure vessel (RPV) embrittlement and to examine the influence of a broad range of irradiation and material parameters on predicted yield strength changes. The results indicate that there are temperature and displacement rate regimes wherein either CRP or PDC can dominate the material`s response to irradiation, with both interstitial and vacancy type defects contributing to the PDC component. The different dependencies of the CRP and PDC on temperature and displacement rate indicate that simple data extrapolations could lead to poor predictions of RPV embrittlement. It is significant that the yield strength changes predicted by the composite PDC/CRP model exhibit very little dependence on displacement rate below about 10{sup {minus}9} dpa/s. If this result is confirmed, concerns about accelerated displacement rates in power reactor surveillance programs should be minimized. The sensitivity of the model to microstructural parameters highlights the need for more detailed microstructural characterization of RPV steels.

  13. Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

    E-Print Network [OSTI]

    Ceder, Gerbrand

    a promising gate oxide material to replace silicon dioxide in metal-oxide- semiconductor devices. Using-earth-doped lasers. Recently, Y2O3 has re- ceived attention as a promising candidate for replacing sili- con dioxide SiO2 as a gate dielectric material in metal- oxide-semiconductor MOS transistors.1­10 The continual

  14. A Novel Procedure to Determine Optimal Air Static Pressure Set-points and Reset Schedules in VAV Air Handling Units

    E-Print Network [OSTI]

    Zhu, Y.; Liu, M.; Claridge, D. E.; Turner, W. D.; Powell, T.

    1998-01-01T23:59:59.000Z

    Air static pressure set-point or schedule for VAV AHLJ systems is one of the most crucial operational parameters for satisfy lug the building load, maintaining the room comfort level and saving energy costs. This paper presents a novel procedure...

  15. Cardiac gated ventilation

    SciTech Connect (OSTI)

    Hanson, C.W. III [Hospital of the Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. Anesthesia; Hoffman, E.A. [Univ. of Iowa College of Medicine, Iowa City, IA (United States). Div. of Physiologic Imaging

    1995-12-31T23:59:59.000Z

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

  16. The effect on oil recovery of water flooding at pressures above and below the bubble point

    E-Print Network [OSTI]

    Bass, Daniel Materson

    1955-01-01T23:59:59.000Z

    ). Dykstra, H. ~ and Parsons, R. L. , "The Predict ion of Oil Recovery by Water Flooding", Secondar Recovery of Oil in the United States, API, (1950), Second Edition. (4}. Bzeston, J. N. , "A Survey of Injection of Natural Gas Before and During Water... Pictures of Equipment 4. Physical Characteristics of Fluid A Physical Characteristics of Fluid B P V behavior of Natural Gas Effect of Flooding Pressure on Oil Recovery, Fluid A Effect of Initial Gas Saturation on Residual Oil Saturation After Flood...

  17. A correlation for the coefficient of isothermal compressibility of black oil at pressures below the bubble point

    E-Print Network [OSTI]

    Villena Lanzi, Alejandro J

    1985-01-01T23:59:59.000Z

    differential liberation and separator test data of black oil samples from 260 worldwide well locations. The data base consisted of values of isothermal compressibility, stock-tank oil gravity, surface gas gravity, total solution gas-oil ratio, and reservoir... Bubble Point Pressure, pb Surface Gas Specific Gravity, yg 2, 500 31. 0 x 10 to 6600 x 10 psi 1. 5 to 1947 scf/STB 6. 0 to 52. 0 'API 78. 0 to 330. 0 'F 500. 0 to 5300. 0 psig 763. 0 to 5300. 0 psig 0. 58 to 1. 2 Bod ~ relative oil volume...

  18. Sliding-gate valve for use with abrasive materials

    DOE Patents [OSTI]

    Ayers, Jr., William J. (Morgantown, WV); Carter, Charles R. (Fairmont, WV); Griffith, Richard A. (Morgantown, WV); Loomis, Richard B. (Bruceton Mills, WV); Notestein, John E. (Morgantown, WV)

    1985-01-01T23:59:59.000Z

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  19. DEFINITION OF MOTIONLESS PHASES FOR MONITORING GATED RECONSTRUCTION

    E-Print Network [OSTI]

    Boyer, Edmond

    of gating signals that are generated from an abdominal pressure variation signal. This method is considering at the beginning of steady phase of studied organs Objectives Study Protocol Abdominal pressure signal and Gating Average period of pressure variation µ0 = 770, 86 ms Standard deviation 10 = 72,25 ms : High value due

  20. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide andNationalall petroleumGate

  1. Simulations of Variable Bottomhole Pressure Regimes to Improve Production from the Double-Unit Mount Elbert, Milne Point Unit, North Slope Alaska Hydrate Deposit

    SciTech Connect (OSTI)

    Myshakin, Evgeniy; Anderson, Brian; Rose, Kelly; Boswell, Ray

    2011-01-01T23:59:59.000Z

    Gas production was predicted from a reservoir model based on the Mount Elbert gas hydrate accumulation located on the Alaska North slope at various simulator submodels and production scenarios. Log, core, and fluid measurements were used to provide a comprehensive reservoir description. These data were incorporated with experimentally derived saturations, porosities, permeability values, parameters for capillary pressure, and relative permeability functions. The modeled reservoir exposed to depressurization at a constant bottomhole pressure (2.7 MPa) has shown limited production potential due to its low temperature profile. To improve production the bottomhole pressure was allowed to vary from 2.7 (above the quadruple point) to 2.0 MPa over a 15-year period. The results indicate that gas production was nearly doubled in comparison with a constant-pressure regime. Extensive ice formation and hydrate reformation that could severely hinder gas production were avoided in the variable-pressure regime system. A use of permeability variation coupled with porosity change is shown to be crucial to predict those phenomena at a reservoir scale.

  2. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  3. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, Christopher L. (Los Alamos, NM); Idzorek, George C. (Los Alamos, NM); Atencio, Leroy G. (Espanola, NM)

    1987-01-01T23:59:59.000Z

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  4. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19T23:59:59.000Z

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  5. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01T23:59:59.000Z

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  6. Classification of nonlocal two-qubit gates using Schmidt number

    E-Print Network [OSTI]

    S Balakrishnan; Leona J Felicia; R Sankaranarayanan

    2010-03-31T23:59:59.000Z

    It is known from Schmidt decomposition that Schmidt number of nonlocal two-qubit quantum gates is 2 or 4. We identify conditions on geometrical points of a gate to have Schmidt number 2. A simple analysis reveals that Schmidt number 2 corresponds to controlled unitary gates with CNOT being the only perfect entangler. Further, it is shown that Schmidt strength and entangling power are maximum only for CNOT in the controlled unitary family.

  7. Classification of nonlocal two-qubit gates using Schmidt number

    E-Print Network [OSTI]

    Balakrishnan, S; Sankaranarayanan, R

    2009-01-01T23:59:59.000Z

    It is known from Schmidt decomposition that Schmidt number of nonlocal two-qubit quantum gates is 2 or 4. We identify conditions on geometrical points of a gate to have Schmidt number 2. A simple analysis reveals that Schmidt number 2 corresponds to controlled unitary gates with CNOT being the only perfect entangler. Further, it is shown that Schmidt strength and entangling power are maximum only for CNOT in the controlled unitary family.

  8. Adiabatically implementing quantum gates

    SciTech Connect (OSTI)

    Sun, Jie; Lu, Songfeng, E-mail: lusongfeng@hotmail.com; Liu, Fang [School of Computer Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-06-14T23:59:59.000Z

    We show that, through the approach of quantum adiabatic evolution, all of the usual quantum gates can be implemented efficiently, yielding running time of order O(1). This may be considered as a useful alternative to the standard quantum computing approach, which involves quantum gates transforming quantum states during the computing process.

  9. X-ray and runaway electron generation in repetitive pulsed discharges in atmospheric pressure air with a point-to-plane gap

    SciTech Connect (OSTI)

    Shao Tao; Yan Ping [Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China); Key Laboratory of Power Electronics and Electric Drive, Chinese Academy of Sciences, Beijing 100190 (China); Tarasenko, Victor F.; Shut'ko, Yuliya V. [Institute of High Current Electronics, Russian Academy of Science, Tomsk 634055 (Russian Federation); Zhang Cheng [Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190 (China)

    2011-05-15T23:59:59.000Z

    In this paper, using two repetitive nanosecond generators, x-rays were detected in atmospheric air with a highly inhomogeneous electric field by a point-to- plane gap. The rise times of the generators were about 15 and 1 ns. The x-rays were directly measured by various dosimeters and a NaI scintillator with a photomultiplier tube. X-rays were detected in the continuous mode at pulse repetition frequency up to 1 kHz and a voltage pulse rise time of {approx}15 ns. It is shown that the maximum x-ray intensity is attainable at different pulse repetition frequencies depending on the voltage pulse parameters and cathode design. In atmospheric pressure air the x-ray intensity is found to increase with increasing the pulse repetition frequency up to 1 kHz. It is confirmed that the maximum x-ray intensity is attained in a diffuse discharge in a point-to-plane gap.

  10. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12T23:59:59.000Z

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  11. Cellular Gate Technology

    E-Print Network [OSTI]

    Knight, Thomas F.

    1998-01-05T23:59:59.000Z

    We propose a biochemically plausible mechanism for constructing digital logic signals and gates of significant complexity within living cells. These mechanisms rely largely on co-opting existing biochemical machinery and ...

  12. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

    2009-08-04T23:59:59.000Z

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  13. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  14. A Sequence of Quantum Gates

    E-Print Network [OSTI]

    Yorick Hardy; Willi-Hans Steeb

    2012-02-10T23:59:59.000Z

    We study a sequence of quantum gates in finite-dimensional Hilbert spaces given by the normalized eigenvectors of the unitary operators. The corresponding sequence of the Hamilton operators is also given. From the Hamilton operators we construct another hierarchy of quantum gates via the Cayley transform.

  15. Ultrafast, high precision gated integrator

    SciTech Connect (OSTI)

    Wang, X.

    1995-01-01T23:59:59.000Z

    An ultrafast, high precision gated integrator has been developed by introducing new design approaches that overcome the problems associated with earlier gated integrator circuits. The very high speed is evidenced by the output settling time of less than 50 ns and 20 MHz input pulse rate. The very high precision is demonstrated by the total output offset error of less than 0.2mV and the output droop rate of less than 10{mu}V/{mu}s. This paper describes the theory of this new gated integrator circuit operation. The completed circuit test results are presented.

  16. Non-Hermitian quantum gates are more common than Hermitian quantum gates

    E-Print Network [OSTI]

    Anirban Pathak

    2013-09-16T23:59:59.000Z

    Most of the frequently used quantum gates (e.g., NOT, Hadamard, CNOT, SWAP, Toffoli, Fredkin and Pauli gates) are self-inverse (Hermitian). However, with a simple minded argument it is established that most of the allowed quantum gates are non-Hermitian (non-self-inverse). It is also shown that the % of non-Hermitian gates increases with the dimension. For example, 58.33% of the 2-qubit gates, 98.10% of the 3-qubit gates and 99.99% of the 4-qubit gates are non-Hermitian. As classical reversible gates are essentially permutation gates so the above statistics is strictly valid for classical reversible gates. Further, since Hermiticity is not of much interest in context of the classical reversible gate, hence the result implies that most of the allowed classical reversible gates are non-self-inverse.

  17. A flexible pressure monitoring system for pressure ulcer prevention

    E-Print Network [OSTI]

    Yip, Marcus

    Pressure ulcers are painful sores that arise from prolonged exposure to high pressure points, which restricts blood flow and leads to tissue necrosis. This is a common occurrence among patients with impaired mobility, ...

  18. Radar Vehicle Detection Within Four Quadrant Gate Crossings

    E-Print Network [OSTI]

    Illinois at Urbana-Champaign, University of

    of the exit gate · Less delay between entry and exit gate descent · Extends the exit gate delay only) Methodology 4) Results 5) Conclusions 6) Acknowledgments Exit Gate Operating Modes (EGOM) Radar Vehicle

  19. Ferroelectric-gated terahertz plasmonics on graphene

    E-Print Network [OSTI]

    Jin, Dafei

    Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the ...

  20. Attosecond Temporal Gating with Elliptically Polarized Light

    SciTech Connect (OSTI)

    Dudovich, N.; Smirnova, O.; Ivanov, M. Yu.; Villeneuve, D. M.; Corkum, P. B. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6 (Canada); Levesque, J. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6 (Canada); INRS-EMT, 1650 boulevard Lionel-Boulet, CP 1020, Varennes, Quebec J3X 1S2 (Canada); Zeidler, D. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6 (Canada); Carl Zeiss SMT AG, Oberkochen D-73447 (Germany); Comtois, D. [INRS-EMT, 1650 boulevard Lionel-Boulet, CP 1020, Varennes, Quebec J3X 1S2 (Canada)

    2006-12-22T23:59:59.000Z

    Temporal gating allows high accuracy time-resolved measurements of a broad range of ultrafast processes. By manipulating the interaction between an atom and an intense laser field, we extend gating into the nonlinear medium in which attosecond optical and electron pulses are generated. Our gate is an amplitude gate induced by ellipticity of the fundamental pulse. The gate modulates the spectrum of the high harmonic emission and we use the measured modulation to characterize the sub-laser-cycle dynamics of the recollision electron wave packet.

  1. Composite two-qubit quantum gates

    E-Print Network [OSTI]

    Svetoslav S. Ivanov; Nikolay V. Vitanov

    2015-03-30T23:59:59.000Z

    We design composite two-qubit gates, based on the Ising-type interaction. The gates are robust against systematic errors in the qubits' interaction strength and the gate's implementation time. We give composite sequences, which cancel the error up to 6th order, and give a method to achieve even higher accuracy. Our sequences can compensate either relative or absolute errors. For relative error compensation the number of the ingredient gates grows linearly with the desired accuracy, while for absolute compensation only two gates are required to achieve infinitely accurate gates. We also consider an ion-trap implementation of our composite gates, where our sequences achieve simultaneous cancellation of the error in both the pulse area and the detuning.

  2. Remote controlled-NOT gate of d-dimension

    E-Print Network [OSTI]

    Gui-Fang Dang; Heng Fan

    2008-01-23T23:59:59.000Z

    Single qubit rotation gate and the controlled-NOT (CNOT) gate constitute a complete set of gates for universal quantum computation. In general the CNOT gate are only for two nearby qubits. For two qubits which are remote from each other, we need a series of swap gates to transfer these two qubits to the nearest neighboring sites, and then after the CNOT gate we should transfer them to their original sites again. However, a series of swap gates are resource for quantum information processing. One economy way which does not consume so much resource is to implement CNOT gate remotely. The remote CNOT gate is to implement the CNOT gate for two remotely separated qubits with the help of one additional maximally entangled state. The original remote CNOT gate is for two qubits, here we will present the d-dimensional remote CNOT gate. The role of quantum teleportation is identified in the process of the remote CNOT gate.

  3. Nonvolatile memory disturbs due to gate and junction leakage currents

    E-Print Network [OSTI]

    Schroder, Dieter K.

    ) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge; accepted 10 September 2002 Abstract We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current

  4. 2006 29 1 New Capacitorless 1T DRAM Cells : Surrounding Gate and Double Gate MOSFET With

    E-Print Network [OSTI]

    Lee, Jong Duk

    storage node silicon body floating . , double gate back gate negative bias excess hole back induced drain leakage . hole body cell state "1" hole body-drain forward bias cell state "0 source/drain SiN lithography pillar fin pattern . gate channel implantation 0.1µm . SiN hard

  5. TIME DEPENDENT BREAKDOWN OF GATE OXIDE AND PREDICTION OF OXIDE GATE LIFETIME

    E-Print Network [OSTI]

    Mahmoodi, Hamid

    TIME DEPENDENT BREAKDOWN OF GATE OXIDE AND PREDICTION OF OXIDE GATE LIFETIME A thesis submitted Masters of Science In Engineering: Embedded System by Bin Wu San Francisco, California May, 2012 #12;CERTIFICATION OF APPROVAL I certify that I have read Time dependent Breakdown of Gate Oxide and Prediction

  6. Bielectron vortices in gated graphene

    E-Print Network [OSTI]

    C. A. Downing; M. E. Portnoi

    2015-06-14T23:59:59.000Z

    We study the formation of bound two-particle states in gapless monolayer graphene in gated structures. We find that, even in the regime of massless Dirac fermions, coupling can occur at zero-energy for different or same charge quasiparticles. These bipartite states must have a non-zero internal angular momentum, meaning that they only exist as stationary vortices. We propose a new picture of the experimentally seen Fermi velocity renormalization as a manifestation of these pairs, suggest the possibility of a condensate of these novel quasiparticles.

  7. Gate Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarms A SUK Place: Newport,Gate Solar Jump to:

  8. Cavity-QED-based quantum phase gate

    E-Print Network [OSTI]

    Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

    2003-01-01T23:59:59.000Z

    We describe a quantum phase gate in which the two qubits are represented by the photons in the two modes of the cavity field. The gate is implemented by passing a three-level atom in a cascade configuration through the cavity. The upper levels...

  9. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Citation Details Title: Gate-tunable exchange coupling between cobalt clusters on...

  10. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel...

  11. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility Presentation given...

  12. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    current density, requires an understanding of liquid water transport in gas diffusion media * Research by students that have completed GATE center coursework, used GATE labs,...

  13. Possible Dynamically Gated Conductance along Heme Wires in Bacterial...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Possible Dynamically Gated Conductance along Heme Wires in Bacterial Multiheme Cytochromes. Possible Dynamically Gated Conductance along Heme Wires in Bacterial Multiheme...

  14. GATE Center of Excellence at UAB in Lightweight Materials for...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications 2011 DOE...

  15. Vehicle Technologies Office Merit Review 2014: GATE Center of...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. ti026vaidya2014p.pdf More Documents & Publications GATE...

  16. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for WBG Applications Presentation given by Oak Ridge National...

  17. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for...

  18. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

  19. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect (OSTI)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30T23:59:59.000Z

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  20. The ear converts the pressure amplitude variations of sound waves into sensations that we can perceive. The central point to be gleaned from this description is that the ear

    E-Print Network [OSTI]

    Robertson, William

    The Ear The ear converts the pressure amplitude variations of sound waves into sensations that we of the processes involved in hearing. 1. Sound waves enter the auditory canal and the pulsating pressure variations wave. 3. The fluid in the cochlea is vibrated with the frequencies of the incoming sound wave

  1. PRESSURIZATION TEST RESULTS: BONNEVILLE POWER ADMINISTRATION ENERGY CONSERVATION STUDY

    E-Print Network [OSTI]

    Krinkel, D.L.

    2013-01-01T23:59:59.000Z

    solar, electric heat pump, point-of-use electric heaters, andsolar plumbing runs and the pressure relief pipes from the "point-of- use" water heaters

  2. PRESSURIZATION TEST RESULTS: BONNEVILLE POWER ADMINISTRATION ENERGY CONSERVATION STUDY

    E-Print Network [OSTI]

    Krinkel, D.L.

    2013-01-01T23:59:59.000Z

    solar plumbing runs and the pressure relief pipes from the "point-of- use" water heaterswater heating systems: solar, electric heat pump, point-of-use electric heaters,

  3. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect (OSTI)

    Jeffrey Hodgson; David Irick

    2005-09-30T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  4. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M. (Brookline, MA)

    1991-01-01T23:59:59.000Z

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  5. A p-cell approach to integer gate sizing

    E-Print Network [OSTI]

    Doddannagari, Uday

    2009-05-15T23:59:59.000Z

    uniformly spaced gate sizes would result in a large number of gate sizes and maintaining the huge volume of data for this number of gate sizes is difficult. This thesis aims to propose a practical approach to implement integer gate sizes. A parameterized...

  6. High level compilation for gate reconfigurable architectures

    E-Print Network [OSTI]

    Babb, Jonathan William

    2001-01-01T23:59:59.000Z

    A continuing exponential increase in the number of programmable elements is turning management of gate-reconfigurable architectures as "glue logic" into an intractable problem; it is past time to raise this abstraction ...

  7. Sandia National Laboratories: i-GATE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    partners, investors, and technical resources isn't generally an easy task for start-up companies. But for clients of the i-GATE (Innovation for Green Advanced Transportation...

  8. Gate potential control of nanofluidic devices

    E-Print Network [OSTI]

    Le Coguic, Arnaud

    2005-01-01T23:59:59.000Z

    The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

  9. Remote quantum gates mediated by spin chains

    E-Print Network [OSTI]

    R. Ronke; I. D'Amico; T. P. Spiller

    2010-03-09T23:59:59.000Z

    There has been much recent study on the application of spin chains to quantum state transfer and communication. Here we demonstrate that spin chains set up for perfect quantum state transfer can be utilised to generate remote quantum gates, between spin qubits injected at the ends of the chain. The natural evolution of the system across different excitation number sectors generates a maximally-entangling and universal gate between the injected qubits, independent of the length of the chain.

  10. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15T23:59:59.000Z

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  11. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03T23:59:59.000Z

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  12. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1996-01-01T23:59:59.000Z

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  13. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31T23:59:59.000Z

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davisâ??s existing GATE centers have become the campusâ??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  14. Steam Oxidation at High Pressure

    SciTech Connect (OSTI)

    Holcomb, Gordon R. [NETL; Carney, Casey [URS

    2013-07-19T23:59:59.000Z

    A first high pressure test was completed: 293 hr at 267 bar and 670{degrees}C; A parallel 1 bar test was done for comparison; Mass gains were higher for all alloys at 267 bar than at 1 bar; Longer term exposures, over a range of temperatures and pressures, are planned to provide information as to the commercial implications of pressure effects; The planned tests are at a higher combination of temperatures and pressures than in the existing literature. A comparison was made with longer-term literature data: The short term exposures are largely consistent with the longer-term corrosion literature; Ferritic steels--no consistent pressure effect; Austenitic steels--fine grain alloys less able to maintain protective chromia scale as pressure increases; Ni-base alloys--more mass gains above 105 bar than below. Not based on many data points.

  15. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect (OSTI)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Gröschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15T23:59:59.000Z

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  16. Engineering integrated photonics for heralded quantum gates

    E-Print Network [OSTI]

    T. Meany; D. N. Biggerstaff; M. A. Broome; A. Fedrizzi; M. Delanty; A. Gilchrist; G. D. Marshall; M. J. Steel; A. G. White; M. J. Withford

    2015-02-11T23:59:59.000Z

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate implementation of the optimal known gate design which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show that device performance is more sensitive to the small deviations in the coupler reflectivity, arising due to the tolerance values of the fabrication method, than phase variations in the circuit. The mode fidelity was also shown to be less sensitive to reflectivity and phase errors than process fidelity. Our best device achieves a fidelity of 0.931+/-0.001 with the ideal 4x4 unitary circuit and a process fidelity of 0.680+/-0.005 with the ideal computational-basis process.

  17. Using polymer electrolyte gates to set-and-freeze threshold voltage and local potential in nanowire-based devices and thermoelectrics

    E-Print Network [OSTI]

    Sofia Fahlvik Svensson; Adam M. Burke; Damon J. Carrad; Martin Leijnse; Heiner Linke; Adam P. Micolich

    2014-11-11T23:59:59.000Z

    We use the strongly temperature-dependent ionic mobility in polymer electrolytes to 'freeze in' specific ionic charge environments around a nanowire using a local wrap-gate geometry. This enables us to set both the threshold voltage for a conventional doped substrate gate and the local disorder potential at temperatures below 200 Kelvin, which we characterize in detail by combining conductance and thermovoltage measurements with modeling. Our results demonstrate that local polymer electrolyte gates are compatible with nanowire thermoelectrics, where they offer the advantage of a very low thermal conductivity, and hold great potential towards setting the optimal operating point for solid-state cooling applications.

  18. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12T23:59:59.000Z

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  19. Compact modeling of quantum effects in double gate MOSFETs

    E-Print Network [OSTI]

    Wang, Wei

    2007-01-01T23:59:59.000Z

    However, ultrathin gate oxide will lead to high gate leakagethe high enough oxide barrier confinement leads to zero waveoxide becomes significant. The random dopant fluctuation effects increase with shrinking device size and leads

  20. abnormal sensorimotor gating: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer...

  1. Negative quantum capacitance in graphene nanoribbons with lateral gates

    E-Print Network [OSTI]

    Florian, Libisch

    Negative quantum capacitance in graphene nanoribbons with lateral gates R. Reiter1, , U. Derra2 , S numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate

  2. Entangling power and local invariants of two-qubit gates

    E-Print Network [OSTI]

    S Balakrishnan; R Sankaranarayanan

    2010-09-07T23:59:59.000Z

    We show a simple relation connecting entangling power and local invariants of two-qubit gates. From the relation, a general condition under which gates have same entangling power is arrived. The relation also helps in finding the lower bound of entangling power for perfect entanglers, from which the classification of gates as perfect and nonperfect entanglers is obtained in terms of local invariants.

  3. Entangling power and local invariants of two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2010-01-01T23:59:59.000Z

    We show a simple relation connecting entangling power and local invariants of two-qubit gates. From the relation, a general condition under which gates have same entangling power is arrived. The relation also helps to find the lower bound of entangling power for perfect entangler, from which a new classification of gates in terms of local invariants is obtained.

  4. Clustering of cyclic-nucleotide-gated channels in olfactory cilia

    E-Print Network [OSTI]

    French, Donald A.

    Clustering of cyclic-nucleotide-gated channels in olfactory cilia Richard J. Flannery* , Donald A channel clusters in olfactory cilia Key words: olfaction, receptor neuron, cyclic-nucleotide-gated channel of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG

  5. Quantum Logic Gates using q-deformed Oscillators

    E-Print Network [OSTI]

    Debashis Gangopadhyay; Mahendra Nath Sinha Roy

    2006-07-14T23:59:59.000Z

    We show that the quantum logic gates, {\\it viz.} the single qubit Hadamard and Phase Shift gates, can also be realised using q-deformed angular momentum states constructed via the Jordan-Schwinger mechanism with two q-deformed oscillators. {\\it Keywords :} quantum logic gates ; q-deformed oscillators ; quantum computation {\\it PACS:} 03.67.Lx ; 02.20.Uw

  6. The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area

    E-Print Network [OSTI]

    Kim, Suk Kyung

    2006-10-30T23:59:59.000Z

    ' perceptions of safety. Gated community residents reported a higher crime rate than nongated community residents. In addition to gates and fences that define apartment territory, such elements as patrol services, bright lighting, direct emergency buttons...

  7. Quantum gates via relativistic remote control

    E-Print Network [OSTI]

    Eduardo Martin-Martinez; Chris Sutherland

    2014-10-30T23:59:59.000Z

    We harness general relativistic effects to gain quantum control on a stationary qubit in an optical cavity by controlling the non-inertial motion of a different probe atom. Furthermore, we show that by considering relativistic trajectories of the probe, we enhance the efficiency of the quantum control. We explore the possible use of these relativistic techniques to build universal quantum gates.

  8. New correlations for dew-point, specific gravity and producing yield for gas condensates

    E-Print Network [OSTI]

    Ovalle Cortissoz, Adriana Patricia

    2002-01-01T23:59:59.000Z

    This work presents four newly developed correlations to estimate dew-point pressure, current specific gravity and producing yield of gas condensate reservoirs. The first correlation may be used to predict the dew-point pressure of the reservoir gas...

  9. New correlations for dew-point, specific gravity and producing yield for gas condensates 

    E-Print Network [OSTI]

    Ovalle Cortissoz, Adriana Patricia

    2002-01-01T23:59:59.000Z

    This work presents four newly developed correlations to estimate dew-point pressure, current specific gravity and producing yield of gas condensate reservoirs. The first correlation may be used to predict the dew-point pressure of the reservoir gas...

  10. Retention and switching kinetics of protonated gate field effect transistors

    SciTech Connect (OSTI)

    DEVINE,R.A.B.; HERRERA,GILBERT V.

    2000-05-23T23:59:59.000Z

    The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

  11. Retention and Switching Kinetics of Protonated Gate Field Effect Transistors

    SciTech Connect (OSTI)

    DEVINE,R.A.B.; HERRERA,GILBERT V.

    2000-06-27T23:59:59.000Z

    The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

  12. Characterizing the geometrical edges of nonlocal two-qubit gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2009-05-30T23:59:59.000Z

    Nonlocal two-qubit gates are geometrically represented by tetrahedron known as Weyl chamber within which perfect entanglers form a polyhedron. We identify that all edges of the Weyl chamber and polyhedron are formed by single parametric gates. Nonlocal attributes of these edges are characterized using entangling power and local invariants. In particular, SWAP (power)alpha family of gates constitutes one edge of the Weyl chamber with SWAP-1/2 being the only perfect entangler. Finally, optimal constructions of controlled-NOT using SWAP-1/2 gate and gates belong to three edges of the polyhedron are presented.

  13. Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge

    SciTech Connect (OSTI)

    Lartsev, Arseniy; Yager, Tom; Lara-Avila, Samuel, E-mail: samuel.lara@chalmers.se; Kubatkin, Sergey [Department of Microtechnology and Nanoscience, Chalmers University of Technology, S-41296 Göteborg (Sweden); Bergsten, Tobias [SP Technical Research Institute of Sweden, S-50115 Borås (Sweden); Tzalenchuk, Alexander [National Physical Laboratory, Teddington TW110LW (United Kingdom); Royal Holloway, University of London, Egham TW20 0EX (United Kingdom); Janssen, T. J. B. M [National Physical Laboratory, Teddington TW110LW (United Kingdom); Yakimova, Rositza [Department of Physics, Chemistry and Biology (IFM), Linköping University, S-58183 Linköping (Sweden)

    2014-08-11T23:59:59.000Z

    We demonstrate reversible carrier density control across the Dirac point (?n???10{sup 13?}cm{sup ?2}) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.

  14. Classification of transversal gates in qubit stabilizer codes

    E-Print Network [OSTI]

    Jonas T. Anderson; Tomas Jochym-O'Connor

    2014-09-29T23:59:59.000Z

    This work classifies the set of diagonal gates that can implement a single or two-qubit transversal logical gate for qubit stabilizer codes. We show that individual physical gates on the underlying qubits that compose the code are restricted to have entries of the form $e^{i \\pi c/2^k}$ along their diagonal, resulting in a similarly restricted class of logical gates that can be implemented in this manner. Moreover, we show that all diagonal logical gates that can be implemented transversally by individual physical diagonal gates must belong to the Clifford hierarchy. Furthermore, we can use this result to prove a conjecture about transversal gates made by Zeng et al. in 2007.

  15. Enlarge Image Peer pressure. Magnetic

    E-Print Network [OSTI]

    Thywissen, Joseph

    to stick it to your refrigerator, but an ultra-cold gas magnetizes itself just as do metals such as ironEnlarge Image Peer pressure. Magnetic domains in steel (vertical bans) arise when neighboring electrons point their magnetic poles in the same direction. CREDIT: ZUREKS, CHRIS VARDON

  16. Enlarge Image Peer pressure. Magnetic

    E-Print Network [OSTI]

    Enlarge Image Peer pressure. Magnetic domains in steel (vertical bans) arise when neighboring electrons point their magnetic poles in the same direction. CREDIT: ZUREKS, CHRIS VARDON/WIKIMEDIA By Adrian Cho ScienceNOW Daily News 18 September 2009 It would be tough to stick it to your refrigerator

  17. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

    2012-04-24T23:59:59.000Z

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  18. A laser-programmable gate array

    E-Print Network [OSTI]

    Gullette, James Benjamin

    1985-01-01T23:59:59.000Z

    was investigated. A novel approach to the personalization of digital NMOS semicustom devices using laser re- structuring techinques was developed to expand the capabilities of current devices. A laser-programmable device offers logic designers an alternative... are determined the metal mask is designed and the final product is produced by completing the metallizat, ion on the preprocessed chips. B. Trade-ops Gate arrays have many advantages over fully custom integrated circuits 11''. This semicustom approach...

  19. Critical point analysis of phase envelope diagram

    SciTech Connect (OSTI)

    Soetikno, Darmadi; Siagian, Ucok W. R. [Department of Petroleum Engineering, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia); Kusdiantara, Rudy, E-mail: rkusdiantara@s.itb.ac.id; Puspita, Dila, E-mail: rkusdiantara@s.itb.ac.id; Sidarto, Kuntjoro A., E-mail: rkusdiantara@s.itb.ac.id; Soewono, Edy; Gunawan, Agus Y. [Department of Mathematics, Institut Teknologi Bandung, Jl. Ganesha 10, Bandung 40132 (Indonesia)

    2014-03-24T23:59:59.000Z

    Phase diagram or phase envelope is a relation between temperature and pressure that shows the condition of equilibria between the different phases of chemical compounds, mixture of compounds, and solutions. Phase diagram is an important issue in chemical thermodynamics and hydrocarbon reservoir. It is very useful for process simulation, hydrocarbon reactor design, and petroleum engineering studies. It is constructed from the bubble line, dew line, and critical point. Bubble line and dew line are composed of bubble points and dew points, respectively. Bubble point is the first point at which the gas is formed when a liquid is heated. Meanwhile, dew point is the first point where the liquid is formed when the gas is cooled. Critical point is the point where all of the properties of gases and liquids are equal, such as temperature, pressure, amount of substance, and others. Critical point is very useful in fuel processing and dissolution of certain chemicals. Here in this paper, we will show the critical point analytically. Then, it will be compared with numerical calculations of Peng-Robinson equation by using Newton-Raphson method. As case studies, several hydrocarbon mixtures are simulated using by Matlab.

  20. Risk analysis study of non-routine turbine/generator shutdown events and intake gate evaluation

    SciTech Connect (OSTI)

    Bardy, D.M. [Hydroelectric Design Center, Portland, OR (United States)

    1995-12-31T23:59:59.000Z

    The Corps of Engineers has undertaken a study to perform a reliability and risk analysis for evaluating non-routine turbine/generator shutdown scenarios. The study will evaluate the risks associated with events that would require a powerhouse to shut down a turbine/generator by using intake gates. The goal of this project is to estimate any potential damage that could occur for various intake gate configurations and closure times. The data obtained can also be used to evaluate any of the systems that affect reliability of the turbine/generator using established methods of risk analysis. This paper will briefly outline the study objectives and describe the progress of the study to this point.

  1. Measures of operator entanglement of two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2011-01-01T23:59:59.000Z

    Two different measures of operator entanglement of two-qubit gates, namely, Schmidt strength and linear entropy, are studied. While these measures are shown to have one-to-one relation between them for Schmidt number 2 class of gates, no such relation exists for Schmidt number 4 class, implying that the measures are inequivalent in general. Further, we establish a simple relation between linear entropy and local invariants of two-qubit gates. The implication of the relation is discussed.

  2. Measures of operator entanglement of two-qubit gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2011-06-21T23:59:59.000Z

    Two different measures of operator entanglement of two-qubit gates, namely, Schmidt strength and linear entropy, are studied. While these measures are shown to have one-to-one relation between them for Schmidt number 2 class of gates, no such relation exists for Schmidt number 4 class, implying that the measures are inequivalent in general. Further, we establish a simple relation between linear entropy and local invariants of two-qubit gates. The implication of the relation is discussed.

  3. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS)...

  4. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Energy Savers [EERE]

    Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used...

  5. GATE Center of Excellence at UAB in Lightweight Materials for...

    Broader source: Energy.gov (indexed) [DOE]

    February 28, 2008 GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications Uday Vaidya (Principal Investigator) & J. Barry Andrews (Project Director)...

  6. An elementary optical gate for expanding entanglement web

    E-Print Network [OSTI]

    Toshiyuki Tashima; Sahin Kaya Ozdemir; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

    2008-03-13T23:59:59.000Z

    We introduce an elementary optical gate for expanding polarization entangled W states, in which every pair of photons are entangled alike. The gate is composed of a pair of 50:50 beamsplitters and ancillary photons in the two-photon Fock state. By seeding one of the photons in an $n$-photon W state into this gate, we obtain an $(n+2)$-photon W state after post-selection. This gate gives a better efficiency and a simpler implementation than previous proposals for $\\rm W$-state preparation.

  7. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    E-Print Network [OSTI]

    Zhang, Yuanbo

    2010-01-01T23:59:59.000Z

    Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

  8. Vehicle Technologies Office Merit Review 2014: GATE Center of...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. lm081vaidya2014o.pdf More Documents & Publications...

  9. GATE Center of Excellence at UAB for Lightweight Materials and...

    Broader source: Energy.gov (indexed) [DOE]

    at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for...

  10. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education...

  11. Gate Fidelities, Quantum Broadcasting, and Assessing Experimental Realization

    E-Print Network [OSTI]

    Hyang-Tag Lim; Young-Sik Ra; Yong-Su Kim; Yoon-Ho Kim; Joonwoo Bae

    2011-06-29T23:59:59.000Z

    We relate gate fidelities of experimentally realized quantum operations to the broadcasting property of their ideal operations, and show that the more parties a given quantum operation can broadcast to, the higher gate fidelities of its experimental realization are in general. This is shown by establishing the correspondence between two operational quantities, quantum state shareability and quantum broadcasting. This suggests that, to assess an experimental realization using gate fidelities, the worst case of realization such as noisy operations should be taken into account and then compared to obtained gate fidelities. In addition, based on the correspondence, we also translate results in quantum state shareability to their counterparts in quantum operations.

  12. An overview of the gate and panel industry

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01T23:59:59.000Z

    OF CONTENTS I. Introduction II. Market Review lll Critical Factors IV. Gate and Panel Fvaluation A Table 1. Light Duty Gate B. Table 2. Medium Duty Gate C. Table 3. Heavy Duty Gate D. Table 4 Light Duty Panel B Table 5. Medium Duty Panel R Table 6... of their cost and convience. MARKET REVIEW There are a multitude of companies that manufacture portable handling facilities from the basic panel components to complete corral layouts. Just like with cattle breeds, there are a wide variety of manufactured...

  13. Soot particle aerosol dynamics at high pressure

    SciTech Connect (OSTI)

    Harris, S.J. (General Motors Research Labs., Warren, MI (USA). Physics Dept.); Kennedy, I.M. (California Univ., Davis, CA (USA). Dept. of Mechanical Engineering)

    1989-12-01T23:59:59.000Z

    The authors have used detailed calculations to analyze the coagulation dynamics of a soot aerosol at high pressures (20 and 50 atm). They find that the soot size distribution is altered compared to lower-pressure conditions because the mean free path at high pressures is reduced to the point that the particles are similar in size to the mean free path. At lower pressures the form of the size distribution becomes constant (self-preserving) in time, allowing optical measurements to be easily interpreted. However, the authors find that at pressures above about 5 atm the shape of the size distribution continually changes. As a result, proper and accurate interpretation of optical data at high pressures is more difficult than at lower pressures.

  14. Gate-teleportation-based blind quantum computation

    E-Print Network [OSTI]

    Mear M. R. Koochakie

    2014-12-25T23:59:59.000Z

    Blind quantum computation (BQC) is a model in which a computation is performed on a server by a client such that the server is kept blind about the input, the algorithm, and the output of the computation. Here we layout a general framework for BQC which, unlike the previous BQC models, does not constructed on specific computational model. A main ingredient of our construction is gate teleportation. We demonstrate that our framework can be straightforwardly implemented on circuit-based models as well as measurement-based models of quantum computation. We illustrate our construction by showing that universal BQC is possible on correlation-space measurement-based quantum computation models.

  15. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park, Texas: EnergyGarvin County,|GasconadeOhio: EnergyGates,

  16. An FPGA Architecture Supporting Dynamically Controlled Power Gating

    E-Print Network [OSTI]

    Wilton, Steve

    An FPGA Architecture Supporting Dynamically Controlled Power Gating Assem A. M. Bsoul 1 and Steven at reducing leakage power. However, previous techniques focus on statically- controlled power gating. In this paper, we propose a modification to the fabric of an FPGA that enables dynamically-controlled power

  17. Wave represents displacement Wave represents pressure Source -Sound Waves

    E-Print Network [OSTI]

    Colorado at Boulder, University of

    Wave represents displacement Wave represents pressure Source - Sound Waves Distance between crests is wavelength Number of crests passing a point in 1 second is frequency Wave represents pressure Target - Radio Waves Distance between crests is wavelength Number of crests passing a point in 1 second is frequency

  18. New VLSI complexity results for threshold gate comparison

    SciTech Connect (OSTI)

    Beiu, V.

    1996-12-31T23:59:59.000Z

    The paper overviews recent developments concerning optimal (from the point of view of size and depth) implementations of COMPARISON using threshold gates. We detail a class of solutions which also covers another particular solution, and spans from constant to logarithmic depths. These circuit complexity results are supplemented by fresh VLSI complexity results having applications to hardware implementations of neural networks and to VLSI-friendly learning algorithms. In order to estimate the area (A) and the delay (T), as well as the classical AT{sup 2}, we shall use the following {open_quote}cost functions{close_quote}: (i) the connectivity (i.e., sum of fan-ins) and the number-of-bits for representing the weights and thresholds are used as closer approximations of the area; while (ii) the fan-ins and the length of the wires are used for closer estimates of the delay. Such approximations allow us to compare the different solutions-which present very interesting fan-in dependent depth-size and area-delay tradeoffs - with respect to AT{sup 2}.

  19. University of Illinois at Urbana Champaigns GATE Center forAdvanced...

    Energy Savers [EERE]

    of Illinois at Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana Champaigns GATE Center forAdvanced...

  20. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel...

  1. US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing

    E-Print Network [OSTI]

    Lee, Dongwon

    US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing in the automotive industry and academia. Develop relationships between GATE students, faculty, employers

  2. Hybrid architecture for shallow accumulation mode AlGaAs/GaAs heterostructures with epitaxial gates

    E-Print Network [OSTI]

    MacLeod, S. J.; See, A. M.; Hamilton, A. R.; Farrer, I.; Ritchie, D. A.; Ritzmann, J.; Ludwig, A.; Wieck, A. D.

    2015-01-06T23:59:59.000Z

    ;max) is chosen so the leakage current between the Ohmic contacts and top-gate is ? 10 pA (the resolution limit of the Source Measure Unit SMU) when V? = 2.5V. For the deep device VTG;max = 1V and for the shallow device VTG;max = 0.5V. Figure 2 is a plot... V, where s = 0.00308V is the standard deviation, and n = 5 is the num- ber of points. 34 The reported limit to the reproducability/stability of the SMU, `SMU = 2mV (2400 Series SourceMeter Users Manual, Keith- ley Instruments, Inc. Cleveland, Ohio, U...

  3. Change in Intraocular Pressure During Point-of-Care Ultrasound

    E-Print Network [OSTI]

    Berg, Cameron; Doniger, Stephanie J.; Zaia, Brita; Williams, Sarah R.

    2015-01-01T23:59:59.000Z

    IOP represents a dangerous level, in which intraocularwhich represents a potentially dangerous increase in IOP. 21

  4. A starting point | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    starting point A starting point Released: May 28, 2012 Scientists hone in on size and environmental influence of the quantum dots used in hybrid solar cells Understanding the...

  5. High linearity GaN HEMT power amplifier with pre-linearization gate diode Shouxuan Xie, Vamsi Paidi, Sten Heikman, Alessandro Chini,

    E-Print Network [OSTI]

    Long, Stephen I.

    GaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added. Introduction. Our previously described single-ended Class B power amplifier design using GaN HEMT technology is biased at exactly the pinch off point (Class B configuration) [1]. In order to further improve

  6. Graphene terahertz modulators by ionic liquid gating

    E-Print Network [OSTI]

    Wu, Yang; Qiu, Xuepeng; Liu, Jingbo; Deorani, Praveen; Banerjee, Karan; Son, Jaesung; Chen, Yuanfu; Chia, Elbert E M; Yang, Hyunsoo

    2015-01-01T23:59:59.000Z

    Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

  7. Decomposition of bipartite and multipartite unitary gates into the product of controlled unitary gates

    E-Print Network [OSTI]

    Lin Chen; Li Yu

    2015-03-18T23:59:59.000Z

    We show that any unitary operator on the $d_A\\times d_B$ system ($d_A\\ge 2$) can be decomposed into the product of at most $4d_A-5$ controlled unitary operators. The number can be reduced to $2d_A-1$ when $d_A$ is a power of two. We also prove that three controlled unitaries can implement a bipartite complex permutation operator, and discuss the connection to an analogous result on classical reversible circuits. We further show that any $n$-partite unitary on the space $\\mathbb{C}^{d_1}\\otimes...\\otimes\\mathbb{C}^{d_n}$ is the product of at most $[2\\prod^{n-1}_{j=1}(2d_j-2)-1]$ controlled unitary gates, each of which is controlled from $n-1$ systems. The number can be further reduced for $n=4$. We also decompose any bipartite unitary into the product of a simple type of bipartite gates and some local unitaries. We derive dimension-independent upper bounds for the CNOT-gate cost or entanglement cost of bipartite permutation unitaries (with the help of ancillas of fixed size) as functions of the Schmidt rank of the unitary. It is shown that such costs under a simple protocol are related to the log-rank conjecture in communication complexity theory via the link of nonnegative rank.

  8. Perfect electrical switching of edge channel transport in HgTe quantum wells controlled by gate voltage

    SciTech Connect (OSTI)

    Fu, Hua-Hua, E-mail: hhfu@mail.hust.edu.cn; Wu, Dan-Dan; Gu, Lei [College of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-08-14T23:59:59.000Z

    We present a proposal to realize a perfect electrical switching of topological edge-state transport in a HgTe quantum well (QW). In our device design, we place a strip-like top gate voltage in a conventional quantum-point-contact (QPC) region in the HgTe QW. The numerical calculations show that upon increasing the gate voltage, two new conductance channels are developed in the transport direction and just neighbouring the boundaries of the top gate. The quantum states in the new channels can couple with the edge states to open a gap in energy spectrum, and in turn the gap width can be adjusted by the gate voltage, indicating that switch-on/off of the edge channels can be manipulated in a controllable way. Our device can not only be considered as a development of the conventional QPC structure based on the HgTe QW but also provides a new route to realize topological electrical switchers.

  9. Gated x-ray detector for the National Ignition Facility

    SciTech Connect (OSTI)

    Oertel, John A.; Aragonez, Robert; Archuleta, Tom; Barnes, Cris; Casper, Larry; Fatherley, Valerie; Heinrichs, Todd; King, Robert; Landers, Doug; Lopez, Frank; Sanchez, Phillip; Sandoval, George; Schrank, Lou; Walsh, Peter; Bell, Perry; Brown, Matt; Costa, Robert; Holder, Joe; Montelongo, Sam; Pederson, Neal [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); VI Control Systems Ltd., Los Alamos, New Mexico 87544 (United States)

    2006-10-15T23:59:59.000Z

    Two new gated x-ray imaging cameras have recently been designed, constructed, and delivered to the National Ignition Facility in Livermore, CA. These gated x-Ray detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significantly different from earlier generations of gated x-ray images due, in part, to an innovative impedance matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring, and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution, and no detectable impedance reflections.

  10. PowerPoint Presentation

    Broader source: Energy.gov (indexed) [DOE]

    - 400sec 464 MMscfd - Minimum Pressure - 830 psi CAES Aquifer Storage System Geology of Iowa Mt. Simon Sandstone Jordan Sandstone St. Peter Sandstone Glenwood Fm....

  11. PowerPoint Presentation

    Office of Environmental Management (EM)

    Energy Prices Are Escalating * Infrastructure challenges are pressuring customer bills * ISO-NE has determined that our gas pipeline constraints may have added over 3 billion to...

  12. Interaction between Injection Points during Hydraulic Fracturing

    E-Print Network [OSTI]

    Hals, Kjetil M D

    2012-01-01T23:59:59.000Z

    We present a model of the hydraulic fracturing of heterogeneous poroelastic media. The formalism is an effective continuum model that captures the coupled dynamics of the fluid pressure and the fractured rock matrix and models both the tensile and shear failure of the rock. As an application of the formalism, we study the geomechanical stress interaction between two injection points during hydraulic fracturing (hydrofracking) and how this interaction influences the fracturing process. For injection points that are separated by less than a critical correlation length, we find that the fracturing process around each point is strongly correlated with the position of the neighboring point. The magnitude of the correlation length depends on the degree of heterogeneity of the rock and is on the order of 30-45 m for rocks with low permeabilities. In the strongly correlated regime, we predict a novel effective fracture-force that attracts the fractures toward the neighboring injection point.

  13. Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation

    SciTech Connect (OSTI)

    Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

    2012-04-01T23:59:59.000Z

    Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

  14. Scanning Gate Spectroscopy and Its Application to Carbon Nanotube Defects

    E-Print Network [OSTI]

    Collins, Philip G

    2011-01-01T23:59:59.000Z

    24) Sarid, D. Exploring Scanning Probe Microscopy withS. V. ; Gruverman, A. Scanning probe microscopy: electricalLETTER pubs.acs.org/NanoLett Scanning Gate Spectroscopy and

  15. Micro-mechanical logic for field produceable gate arrays

    E-Print Network [OSTI]

    Prakash, Manu

    2005-01-01T23:59:59.000Z

    A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

  16. A comprehensive test method for reprogammable field programmable gate arrays

    E-Print Network [OSTI]

    Ashen, David Glen

    1996-01-01T23:59:59.000Z

    In this thesis, a new test algorithm for reprogrammable field programmable gate arrays (FPGAs) is developed. The fault models consisting of stuck-at faults, bridge faults, programmable switch stuck-on, and stuck-off faults, are utilized. Both...

  17. CRYSTALLOGRAPHIC POINT AND SPACE

    E-Print Network [OSTI]

    California at Santa Cruz, University of

    CRYSTALLOGRAPHIC POINT AND SPACE GROUPS Andy Elvin June 10, 2013 #12;Contents Point and Space no reflection axes #12;Cube and Octahedron are dual Symmetries under Oh #12;Space Groups Subgroups of E(3) Point Group + Translation { R | 0 }{ E | t }a = { R | t }a = Ra + t 230 Space Groups 73 symmorphic space

  18. Rapidly reconfigurable all-optical universal logic gate

    DOE Patents [OSTI]

    Goddard, Lynford L. (Hayward, CA); Bond, Tiziana C. (Livermore, CA); Kallman, Jeffrey S. (Pleasanton, CA)

    2010-09-07T23:59:59.000Z

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  19. Ultrafast gating of proximity-focused microchannel-plate intensifiers

    SciTech Connect (OSTI)

    Lundy, A.S.; Iverson, A.E.

    1982-01-01T23:59:59.000Z

    Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

  20. Filter design for hybrid spin gates

    E-Print Network [OSTI]

    Andreas Albrecht; Martin B. Plenio

    2015-04-14T23:59:59.000Z

    The impact of control sequences on the environmental coupling of a quantum system can be described in terms of a filter. Here we analyze how the coherent evolution of two interacting spins subject to periodic control pulses, at the example of a nitrogen vacancy center coupled to a nuclear spin, can be described in the filter framework in both the weak and the strong coupling limit. A universal functional dependence around the filter resonances then allows for tuning the coupling type and strength. Originally limited to small rotation angles, we show how the validity range of the filter description can be extended to the long time limit by time-sliced evolution sequences. Based on that insight, the construction of tunable, noise decoupled, conditional gates composed of alternating pulse sequences is proposed. In particular such an approach can lead to a significant improvement in fidelity as compared to a strictly periodic control sequence. Moreover we analyze the decoherence impact, the relation to the filter for classical noise known from dynamical decoupling sequences, and we outline how an alternating sequence can improve spin sensing protocols.

  1. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-09-08T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna (10), so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive (24) and transmit cavities (22) by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling.

  2. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  3. PressurePressure Indiana Coal Characteristics

    E-Print Network [OSTI]

    Fernández-Juricic, Esteban

    TimeTime PressurePressure · Indiana Coal Characteristics · Indiana Coals for Coke · CoalTransportation in Indiana · Coal Slurry Ponds Evaluation · Site Selection for Coal Gasification · Coal-To-Liquids Study, CTL · Indiana Coal Forecasting · Under-Ground Coal Gasification · Benefits of Oxyfuel Combustion · Economic

  4. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Florida, University of

    energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts

  5. Enhancing controllability and stability of bottom-gated graphene thin-film transistors by passivation with methylamine

    SciTech Connect (OSTI)

    Drapeko, Maksim, E-mail: maksim.drapeko.10@ucl.ac.uk, E-mail: md584@cam.ac.uk [London Centre for Nanotechnology, University College London, 17-19 Gordon Street, WC1H 0AH London, United Kingdom and Centre for Advanced Photonics and Electronics, Department of Engineering, Cambridge University, 9 J J Thomson Avenue, CB3 0HE Cambridge (United Kingdom)

    2014-06-02T23:59:59.000Z

    This paper is intended to aid to bridge the gap between chemistry and electronic engineering. In this work, the fabrication of chemical vapour deposited graphene field-effect transistors employing silicon-nitride (Si{sub 3}N{sub 4}) gate dielectric is presented, showing originally p-type channel conduction due to ambient impurities yielding uncontrollable behaviour. Vacuum annealing has been performed to balance off hole and electron conduction in the channel, leading to the observation of the Dirac point and therefore improving controllability. Non-covalent functionalisation by methylamine has been performed for passivation and stability reasons yielding electron mobility of 4800?cm{sup 2}/V?s and hole mobility of 3800?cm{sup 2}/V?s as well as stabilised controllable behaviour of a bottom-gated transistor. The introduction of interface charge following the non-covalent functionalisation as well as the charge balance have been discussed and analysed.

  6. Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J. Liu*, A. Ramirez**, D. L. Kwong*, D. Wristers**, A. Ritenour#

    E-Print Network [OSTI]

    Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pre- gate cleaning and NH3-based Ge surface

  7. Understanding Blood Pressure

    E-Print Network [OSTI]

    Understanding Blood Pressure · Monitorathomewithadigitalmonitor. · Useleftarmwithcorrectsizecuff. · Avoidcaffeine,alcohol,andtobacco. Steps to Follow FOR AN ACCURATE MEASUREMENT Blood pressure is the measurement of the force of blood on the walls of the arteries. Bottom number = Diastolic (force between heart beats) Top

  8. Free-surface flow simulations for discharge-based operation of hydraulic structure gates

    E-Print Network [OSTI]

    Erdbrink, C D; Sloot, P M A

    2014-01-01T23:59:59.000Z

    We combine non-hydrostatic flow simulations of the free surface with a discharge model based on elementary gate flow equations for decision support in operation of hydraulic structure gates. A water level-based gate control used in most of today's general practice does not take into account the fact that gate operation scenarios producing similar total discharged volumes and similar water levels may have different local flow characteristics. Accurate and timely prediction of local flow conditions around hydraulic gates is important for several aspects of structure management: ecology, scour, flow-induced gate vibrations and waterway navigation. The modelling approach is described and tested for a multi-gate sluice structure regulating discharge from a river to the sea. The number of opened gates is varied and the discharge is stabilized with automated control by varying gate openings. The free-surface model was validated for discharge showing a correlation coefficient of 0.994 compared to experimental data. A...

  9. Entropic pressure in lattice models for polymers

    E-Print Network [OSTI]

    Yosi Hammer; Yacov Kantor

    2014-11-20T23:59:59.000Z

    In lattice models local pressure on a surface is derived from the change in the free energy of the system due to the exclusion of a certain boundary site, while the total force on the surface can be obtained by a similar exclusion of all surface sites. In these definitions, while the total force on the surface of a lattice system matches the force measured in a continuous system, the local pressure does not. Moreover, in a lattice system, the sum of the local pressures is not equal to the total force as is required in a continuous system. The difference is caused by correlation between occupations of surface sites as well as finite displacement of surface elements used in the definition of the pressures and the force. This problem is particularly acute in the studies of entropic pressure of polymers represented by random or self-avoiding walks on a lattice. We propose a modified expression for the local pressure which satisfies the proper relation between the pressure and the total force, and show that for ideal polymers in the presence of scale-invariant boundaries it produces quantitatively correct values for continuous systems. The required correction to the pressure is non-local, i.e., it depends on long range correlations between contact points of the polymer and the surface.

  10. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    drug delivery device. Commercial Applications Point of Care DiagnosticsHome Health Care Sports Medicine Infectious Disease Treatment Defense of the...

  11. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    for cancer and infectious disease biomarkers in human biological samples * Point-of-Care diagnostics amenable to health clinics and field sensing applications * Integrated...

  12. Web points of interest

    E-Print Network [OSTI]

    Web points of interest ... JUGGLING CLUB; The Lafayette Citizens Band Home Page; Harold Boas' incredible list of math and life resources on the WEB.

  13. Identification of a reversible quantum gate: assessing the resources

    E-Print Network [OSTI]

    Giulio Chiribella; Giacomo Mauro D'Ariano; Martin Roetteler

    2014-09-12T23:59:59.000Z

    We assess the resources needed to identify a reversible quantum gate among a finite set of alternatives, including in our analysis both deterministic and probabilistic strategies. Among the probabilistic strategies we consider unambiguous gate discrimination, where errors are not tolerated but inconclusive outcomes are allowed, and we prove that parallel strategies are sufficient to unambiguously identify the unknown gate with minimum number of queries. This result is used to provide upper and lower bounds on the query complexity and on the minimum ancilla dimension. In addition, we introduce the notion of generalized t-designs, which includes unitary t-designs and group representations as special cases. For gates forming a generalized t-design we give an explicit expression for the maximum probability of correct gate identification and we prove that there is no gap between the performances of deterministic strategies an those of probabilistic strategies. Hence, evaluating of the query complexity of perfect deterministic discrimination is reduced to the easier problem of evaluating the query complexity of unambiguous discrimination. Finally, we consider discrimination strategies where the use of ancillas is forbidden, providing upper bounds on the number of additional queries needed to make up for the lack of entanglement with the ancillas.

  14. The Economics of Back-Pressure Steam Turbines 

    E-Print Network [OSTI]

    Wagner, J. R.; Choroszylow, E.

    1982-01-01T23:59:59.000Z

    Recently, back-pressure steam turbines have become the focal point in many cogeneration applications. This is a result of the savings in operating costs associated with the generation of electrical or mechanical power coincident with the economical...

  15. The Economics of Back-Pressure Steam Turbines

    E-Print Network [OSTI]

    Wagner, J. R.; Choroszylow, E.

    1982-01-01T23:59:59.000Z

    Recently, back-pressure steam turbines have become the focal point in many cogeneration applications. This is a result of the savings in operating costs associated with the generation of electrical or mechanical power coincident with the economical...

  16. Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric

    SciTech Connect (OSTI)

    Pradhan, Sangram K.; Tanyi, Ekembu K.; Skuza, Jonathan R.; Xiao, Bo; Pradhan, Aswini K., E-mail: apradhan@nsu.edu [Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, Virginia 23504 (United States)

    2015-01-01T23:59:59.000Z

    Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO{sub 2} thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO{sub 2} MOS capacitor grown at 1?s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO{sub 2} films have gate leakage current density of (5.18?×?10{sup ?8} A/cm{sup 2}) as well as high dielectric break down fields of more than (?10 MV/cm), which is better and comparable to that of thermally grown SiO{sub 2} at temperatures above 800?°C. These appealing electrical properties of ALD grown SiO{sub 2} thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates.

  17. Atmospheric Pressure Reactor System | EMSL

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Atmospheric Pressure Reactor System Atmospheric Pressure Reactor System The atmospheric pressure reactor system is designed for testing the efficiency of various catalysts for the...

  18. Characterizing the geometrical edges of nonlocal two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2009-01-01T23:59:59.000Z

    Nonlocal two-qubit gates are geometrically represented by tetrahedron known as Weyl chamber within which the perfect entanglers form a polyhedron. We study the entangling power and local invariants of all the edges of the Weyl chamber and polyhedron. It is found that SWAP -alpha- family of gates with constitute one edge of the Weyl chamber. Using circuit equivalence, it is shown that Controlled-NOT can be constructed from SWAP-1/2, the only perfect entangler in the above family. Further, the three edges of the polyhedron possessing the entangling power of 1/6 are also capable of constructing CNOT. It is observed that all the edges of the geometry are formed by single parametric two-qubit gates.

  19. Double Gated Single Molecular Transistor for Charge Detection

    E-Print Network [OSTI]

    S. J. Ray; R. Chowdhury

    2014-11-09T23:59:59.000Z

    The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's function approach. While the molecule is placed on top of a dielectric layer (backed by a metallic gate) and weakly coupled between the Source/Drain electrodes, the charge stability diagram revealed the presence of individual charge states in the Coulomb Blockade regime. This gets affected significantly on addition of an another gate electrode placed on the top of the molecule. This modified double-gated geometry allows additional control of the total energy of the system that is sensitive to the individual charge states of the molecule which can be used as a charge sensing technique operational at room temperature.

  20. Driven Motion and Instability of an Atmospheric Pressure Arc

    SciTech Connect (OSTI)

    Max Karasik

    1999-12-01T23:59:59.000Z

    Atmospheric pressure arcs are used extensively in applications such as welding and metallurgy. However, comparatively little is known of the physics of such arcs in external magnetic fields and the mechanisms of the instabilities present. In order to address questions of equilibrium and stability of such arcs, an experimental arc furnace is constructed and operated in air with graphite cathode and steel anode at currents 100-250 A. The arc is diagnosed with a gated intensified camera and a collimated photodiode array, as well as fast voltage and current probes.

  1. High pressure xenon ionization detector

    DOE Patents [OSTI]

    Markey, John K. (New Haven, CT)

    1989-01-01T23:59:59.000Z

    A method is provided for detecting ionization comprising allowing particles that cause ionization to contact high pressure xenon maintained at or near its critical point and measuring the amount of ionization. An apparatus is provided for detecting ionization, the apparatus comprising a vessel containing a ionizable medium, the vessel having an inlet to allow high pressure ionizable medium to enter the vessel, a means to permit particles that cause ionization of the medium to enter the vessel, an anode, a cathode, a grid and a plurality of annular field shaping rings, the field shaping rings being electrically isolated from one another, the anode, cathode, grid and field shaping rings being electrically isolated from one another in order to form an electric field between the cathode and the anode, the electric field originating at the anode and terminating at the cathode, the grid being disposed between the cathode and the anode, the field shaping rings being disposed between the cathode and the grid, the improvement comprising the medium being xenon and the vessel being maintained at a pressure of 50 to 70 atmospheres and a temperature of 0.degree. to 30.degree. C.

  2. Controlled-NOT Gate Interferometer with a Thermal Source

    E-Print Network [OSTI]

    Vincenzo Tamma; Johannes Seiler

    2015-05-05T23:59:59.000Z

    We demonstrate a multiphoton interferometer able to reproduce, by using only a thermal source, the operation of a quantum logic gate known as controlled-NOT gate. We show how 100%-visibility correlations typical of any Bell state can be obtained by performing polarization correlation measurements in the fluctuation of the number of photons at the interferometer output. The physics of multiphoton interference at the heart of this proposal can be readily used, in general, for the implementation of arbitrary-dimension bosonic networks leading to arbitrary-order entanglement-like correlations.

  3. Isolated-attosecond-pulse generation with infrared double optical gating

    SciTech Connect (OSTI)

    Lan Pengfei; Takahashi, Eiji J.; Midorikawa, Katsumi [Extreme Photonics Research Group, RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

    2011-06-15T23:59:59.000Z

    We propose and theoretically demonstrate an infrared two-color polarization gating scheme for generating an intense isolated attosecond pulse (IAP) in the multicycle regime. Our simulations show that an IAP can be produced using a multicycle two-color driving pulse with a duration up to 60 fs. Moreover, the carrier-envelope phase (CEP) of the driving laser is not required to be stabilized, although the IAP intensity changes with the CEP slip. Such a gating scheme significantly relaxes the requirements for driving lasers and opens the door to easily create intense IAPs with a high-power conventional multicycle laser pulse.

  4. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01T23:59:59.000Z

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  5. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01T23:59:59.000Z

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  6. Experimental Investigation of Sphere Slamming to Quiescent Water Surface-Pressure Distribution and Jetting Flow Field 

    E-Print Network [OSTI]

    Wei, Wan-Yi

    2014-11-26T23:59:59.000Z

    in four various sphere impacting speeds as four cases. Five designed impacting angles which means impacting measuring point around sphere surface for sensor were conducted for each case. Maximum pressures happened at impacting measuring point of 0o...

  7. SAVE THIS | EMAIL THIS | Close Bill and Melinda Gates go back to school

    E-Print Network [OSTI]

    Knaust, Helmut

    Powered by SAVE THIS | EMAIL THIS | Close Bill and Melinda Gates go back to school Their crusade, is essential, Melinda Gates insisted, "if we're going to make any dent in poverty in America." The idea

  8. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Energy Savers [EERE]

    UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence Presentation...

  9. Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

    E-Print Network [OSTI]

    Hashemi, Pouya

    2010-01-01T23:59:59.000Z

    Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture ...

  10. Penn State DOE GATE Center of Exellence for In-Vehicle, High...

    Energy Savers [EERE]

    Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems...

  11. Pressure cryocooling protein crystals

    DOE Patents [OSTI]

    Kim, Chae Un (Ithaca, NY); Gruner, Sol M. (Ithaca, NY)

    2011-10-04T23:59:59.000Z

    Preparation of cryocooled protein crystal is provided by use of helium pressurizing and cryocooling to obtain cryocooled protein crystal allowing collection of high resolution data and by heavier noble gas (krypton or xenon) binding followed by helium pressurizing and cryocooling to obtain cryocooled protein crystal for collection of high resolution data and SAD phasing simultaneously. The helium pressurizing is carried out on crystal coated to prevent dehydration or on crystal grown in aqueous solution in a capillary.

  12. High temperature pressure gauge

    DOE Patents [OSTI]

    Echtler, J. Paul (Pittsburgh, PA); Scandrol, Roy O. (Library, PA)

    1981-01-01T23:59:59.000Z

    A high temperature pressure gauge comprising a pressure gauge positioned in fluid communication with one end of a conduit which has a diaphragm mounted in its other end. The conduit is filled with a low melting metal alloy above the diaphragm for a portion of its length with a high temperature fluid being positioned in the remaining length of the conduit and in the pressure gauge.

  13. PowerPoint Presentation

    Energy Savers [EERE]

    be formatted to fit on 8.5 x 11 inch paper with margins not less than one inch on every side. Use Times New Roman typeface, a black font color, and a font size of 12 point or...

  14. Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor

    E-Print Network [OSTI]

    Singh, Amrinder

    2011-10-21T23:59:59.000Z

    . ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? ? ? ? ? ? ? ? ? ? Front gate Source Back gate Drain n+n+ p- Body Fig. I.1. Planar double gate NFET DGFETs can be broadly classified into two categories: ? Symmetric: In symmetrical DGFET, the front and the back gate are identical, having same oxide thickness... nanometer regime. In short channel devices, Vth decreases with reduction in channel length. This phenomenon is also known as Vth roll-off. It can lead to significant increase in leakage power. Drain induced barrier lowering (DIBL) is another phenomenon...

  15. Pressure-sensitive optrode

    DOE Patents [OSTI]

    Hirschfeld, T.B.

    1985-04-09T23:59:59.000Z

    An apparatus and method are disclosed for sensing changes in pressure and for generating optical signals related to changes in pressure. Light from a fiber optic is directed to a movable surface which is coated with a light-responsive material, and which moves relative to the end of the fiber optic in response to changes in pressure. The same fiber optic collects a portion of the reflected or emitted light from the movable surface. Changes in pressure are determined by measuring changes in the amount of light collected. 5 figs.

  16. Pressurized fluidized bed reactor

    DOE Patents [OSTI]

    Isaksson, Juhani (Karhula, FI)

    1996-01-01T23:59:59.000Z

    A pressurized fluid bed reactor power plant includes a fluidized bed reactor contained within a pressure vessel with a pressurized gas volume between the reactor and the vessel. A first conduit supplies primary gas from the gas volume to the reactor, passing outside the pressure vessel and then returning through the pressure vessel to the reactor, and pressurized gas is supplied from a compressor through a second conduit to the gas volume. A third conduit, comprising a hot gas discharge, carries gases from the reactor, through a filter, and ultimately to a turbine. During normal operation of the plant, pressurized gas is withdrawn from the gas volume through the first conduit and introduced into the reactor at a substantially continuously controlled rate as the primary gas to the reactor. In response to an operational disturbance of the plant, the flow of gas in the first, second, and third conduits is terminated, and thereafter the pressure in the gas volume and in the reactor is substantially simultaneously reduced by opening pressure relief valves in the first and third conduits, and optionally by passing air directly from the second conduit to the turbine.

  17. Pressurized fluidized bed reactor

    DOE Patents [OSTI]

    Isaksson, J.

    1996-03-19T23:59:59.000Z

    A pressurized fluid bed reactor power plant includes a fluidized bed reactor contained within a pressure vessel with a pressurized gas volume between the reactor and the vessel. A first conduit supplies primary gas from the gas volume to the reactor, passing outside the pressure vessel and then returning through the pressure vessel to the reactor, and pressurized gas is supplied from a compressor through a second conduit to the gas volume. A third conduit, comprising a hot gas discharge, carries gases from the reactor, through a filter, and ultimately to a turbine. During normal operation of the plant, pressurized gas is withdrawn from the gas volume through the first conduit and introduced into the reactor at a substantially continuously controlled rate as the primary gas to the reactor. In response to an operational disturbance of the plant, the flow of gas in the first, second, and third conduits is terminated, and thereafter the pressure in the gas volume and in the reactor is substantially simultaneously reduced by opening pressure relief valves in the first and third conduits, and optionally by passing air directly from the second conduit to the turbine. 1 fig.

  18. Dual shell pressure balanced vessel

    DOE Patents [OSTI]

    Fassbender, Alexander G. (West Richland, WA)

    1992-01-01T23:59:59.000Z

    A dual-wall pressure balanced vessel for processing high viscosity slurries at high temperatures and pressures having an outer pressure vessel and an inner vessel with an annular space between the vessels pressurized at a pressure slightly less than or equivalent to the pressure within the inner vessel.

  19. Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors

    E-Print Network [OSTI]

    Owen, Man Hon Samuel

    2010-11-16T23:59:59.000Z

    -effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

  20. A FOUR-QUADRANT FLOATING-GATE SYNAPSE Paul Hasler, Chris Diorio, and Bradley A. Minch

    E-Print Network [OSTI]

    Diorio, Chris

    and to the drain. We present experi- mental measurements from a oating-gate synapse that si- multaniously computes, typical of hebbian and backpropagation learning rules, between the input and drain voltages. Our four gate; the form of this rule depends on how various error signals are fed back to the oating gate. 1

  1. Tradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits

    E-Print Network [OSTI]

    Sapatnekar, Sachin

    lead to gate oxide leakage current (Igate), are coming into play from the 90nm node onwards. AccordingTradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits Anup Kumar Sultania Department of ECE University of Minnesota Minneapolis, MN 55455. sachin@ece.umn.edu ABSTRACT Gate oxide

  2. Worry Is Associated With Impaired Gating of Threat From Working Memory

    E-Print Network [OSTI]

    Larson, Christine L.

    Emotion Worry Is Associated With Impaired Gating of Threat From Working Memory Daniel M. Stout, C. L. (2014, August 25). Worry Is Associated With Impaired Gating of Threat From Working Memory Is Associated With Impaired Gating of Threat From Working Memory Daniel M. Stout University of Wisconsin

  3. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  4. Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy

    E-Print Network [OSTI]

    Dy, Jennifer G.

    Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy Ying Cui Dept. For gated lung cancer radiotherapy, it is difficult to generate ac- curate gating signals due to the large techniques, we apply them on five sequences of fluoroscopic images from five lung cancer patients against

  5. Surface texturing of superconductors by controlled oxygen pressure

    DOE Patents [OSTI]

    Chen, Nan (Downers Grove, IL); Goretta, Kenneth C. (Downers Grove, IL); Dorris, Stephen E. (La Grange Park, IL)

    1999-01-01T23:59:59.000Z

    A method of manufacture of a textured layer of a high temperature superconductor on a substrate. The method involves providing an untextured high temperature superconductor material having a characteristic ambient pressure peritectic melting point, heating the superconductor to a temperature below the peritectic temperature, establishing a reduced pO.sub.2 atmosphere below ambient pressure causing reduction of the peritectic melting point to a reduced temperature which causes melting from an exposed surface of the superconductor and raising pressure of the reduced pO.sub.2 atmosphere to cause solidification of the molten superconductor in a textured surface layer.

  6. Surface texturing of superconductors by controlled oxygen pressure

    DOE Patents [OSTI]

    Chen, N.; Goretta, K.C.; Dorris, S.E.

    1999-01-05T23:59:59.000Z

    A method of manufacture of a textured layer of a high temperature superconductor on a substrate is disclosed. The method involves providing an untextured high temperature superconductor material having a characteristic ambient pressure peritectic melting point, heating the superconductor to a temperature below the peritectic temperature, establishing a reduced pO{sub 2} atmosphere below ambient pressure causing reduction of the peritectic melting point to a reduced temperature which causes melting from an exposed surface of the superconductor and raising pressure of the reduced pO{sub 2} atmosphere to cause solidification of the molten superconductor in a textured surface layer. 8 figs.

  7. Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches

    SciTech Connect (OSTI)

    Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

    2013-11-25T23:59:59.000Z

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

  8. Gating and regulation of connexin 43 (Cx43) hemichannels

    E-Print Network [OSTI]

    Newman, Eric A.

    Gating and regulation of connexin 43 (Cx43) hemichannels Jorge E. Contreras* , Juan C. Sa Connexin 43 (Cx43) nonjunctional or ``unapposed'' hemichannels can open under physiological or pathological conditions. We char- acterize hemichannels comprised of Cx43 or Cx43-EGFP (Cx43 with enhanced GFP fused

  9. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect (OSTI)

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

    2009-05-07T23:59:59.000Z

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  10. Three-qubit phase gate based on cavity quantum electrodynamics

    E-Print Network [OSTI]

    Chang, Jun-Tao; Zubairy, M. Suhail

    2008-01-01T23:59:59.000Z

    We describe a three-qubit quantum phase gate which is implemented by passing a four-level atom in a cascade configuration initially in its ground state through a three-mode optical cavity. The three qubits are represented by the photons in the three...

  11. Review Article Gate-Level Circuit Reliability Analysis: A Survey

    E-Print Network [OSTI]

    Chen, Chunhong

    electronic components (such as single electron devices) have demonstrated their nondeterministic characReview Article Gate-Level Circuit Reliability Analysis: A Survey Ran Xiao and Chunhong Chen. Circuit reliability has become a growing concern in today's nanoelectronics, which motivates strong

  12. ECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    imaging techniques to improve both the safety and the efficacy of coronary angiography interventions the ground for a platform dedicated to the planning and execution of percutaneous coronary inter- ventionsECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography Yining HU, Lizhe XIE

  13. An overview of the gate and panel industry 

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01T23:59:59.000Z

    acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

  14. Design, Simulation and Modeling of Insulated Gate Bipolar Transistor

    E-Print Network [OSTI]

    Gupta, Kaustubh

    2013-07-09T23:59:59.000Z

    The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

  15. Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions

    E-Print Network [OSTI]

    LaValle, Steven M.

    Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions Leonardo Bobadilla purposely design them to execute wild motions, which means each will strike every open set infinitely often, "wildly behaving" robots that move more-or-less straight until a wall is contacted. They then pick

  16. TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid

    E-Print Network [OSTI]

    Najm, Farid N.

    TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

  17. Compressed sensing quantum process tomography for superconducting quantum gates

    E-Print Network [OSTI]

    Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

    2014-07-03T23:59:59.000Z

    We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

  18. MS Exam, Spring 2014, Solid State Electronics (ECE 103) 5. (15 points, 3 points each) 1. The energy band diagram for a p-Si/SiO2/n-Si capacitor

    E-Print Network [OSTI]

    California at San Diego, University of

    MS Exam, Spring 2014, Solid State Electronics (ECE 103) 5. (15 points, 3 points each) 1. The energy band diagram for a p-Si/SiO2/n-Si capacitor (SOS-C) under flat-band conditions is given below. The SOS to the device. (c) Same as (b) except now a large negative voltage is applied to the gate. #12;MS Exam, Spring

  19. PRESSURE ACTIVATED SEALANT TECHNOLOGY

    SciTech Connect (OSTI)

    Michael A. Romano

    2004-04-01T23:59:59.000Z

    The objective of this project is to develop new, efficient, cost effective methods of internally sealing natural gas pipeline leaks through the application of differential pressure activated sealants. In researching the current state of the art for gas pipeline sealing technologies we concluded that if the project was successful, it appeared that pressure activated sealant technology would provide a cost effective alternative to existing pipeline repair technology. From our analysis of current field data for a 13 year period from 1985 to 1997 we were able to identify 205 leaks that were candidates for pressure activated sealant technology, affirming that pressure activated sealant technology is a viable option to traditional external leak repairs. The data collected included types of defects, areas of defects, pipe sizes and materials, incident and operating pressures, ability of pipeline to be pigged and corrosion states. This data, and subsequent analysis, was utilized as a basis for constructing applicable sealant test modeling.

  20. High pressure melt ejection

    SciTech Connect (OSTI)

    Tarbell, W.W.; Brockmann, J.E.; Pilch, M.

    1983-01-01T23:59:59.000Z

    Recent probabilistic risk assessments have identified the potential for reactor pressure vessel failure while the reactor coolant system is at elevated pressure. The analyses postulate that the blowdown of steam and hydrogen into the reactor cavity will cause the core material to be swept from the cavity region into the containment building. The High Pressure Melt Streaming (HIPS) program is an experimental study of the high pressure ejection of molten material and subsequent interactions within a concrete cavity. The program focuses on using prototypic system conditions and scaled models of reactor geometries to accurately simulate the ex-vessel processes during high-pressure accident sequences. Scaling analyses of the experiment show that the criteria established for core debris removal from the cavity are met or exceeded. Tests are performed at two scales, representing 1/10th and 1/20th linear reproductions of the Zion reactor plant. Results of the 1/20th scale tests are presented.

  1. High-Pressure Micellar Solutions of Symmetric and Asymmetric Styrene?Diene Diblocks in Compressible Near Critical Solvents: Micellization Pressures and Cloud Pressures Respond but Micellar Cloud Pressures Insensitive to Copolymer Molecular Weight, Concentration, and Block Ratio Changes

    SciTech Connect (OSTI)

    Winoto, Winoto [University of Wyoming, Laramie; Tan, Sugata [University of Wyoming, Laramie; Shen, Youqin [University of Wyoming, Laramie; Radosz, Maciej [University of Wyoming, Laramie; Hong, Kunlun [ORNL; Mays, Jimmy [ORNL

    2009-01-01T23:59:59.000Z

    Micellar solutions of polystyrene-block-polybutadiene and polystyrene-block-polyisoprene in propane are found to exhibit significantly lower cloud pressures than the corresponding hypothetical nonmicellar solutions. Such a cloud-pressure reduction indicates the extent to which micelle formation enhances the apparent diblock solubility in near-critical and hence compressible propane. Concentration-dependent pressure-temperature points beyond which no micelles can be formed, referred to as the micellization end points, are found to depend on the block type, size, and ratio. The cloud-pressure reduction and the micellization end point measured for styrene-diene diblocks in propane should be characteristic of all amphiphilic diblock copolymer solutions that form micelles in compressible solvents.

  2. Barocaloric effect and the pressure induced solid state refrigerator

    SciTech Connect (OSTI)

    Oliveira, N. A. de [Instituto de Fisica Armando Dias Tavares Universidade do Estado do Rio de Janeiro, Rua Sao Francisco Xavier 524, Rio de Janeiro, 20550-013, RJ (Brazil)

    2011-03-01T23:59:59.000Z

    The current refrigerators are based on the heating and cooling of fluids under external pressure variation. The great inconvenience of this refrigeration technology is the damage caused to the environment by the refrigerant fluids. In this paper, we discuss the magnetic barocaloric effect, i.e., the heating or cooling of magnetic materials under pressure variation and its application in the construction of refrigerators using solid magnetic compounds as refrigerant materials and pressure as the external agent. The discussion presented in this paper points out that such a pressure induced solid state refrigerator can be very interesting because it is not harmful to the environment and can exhibit a good performance.

  3. Pressure transient testing and productivity analysis for horizontal wells

    E-Print Network [OSTI]

    Cheng, Yueming

    2004-11-15T23:59:59.000Z

    Page 2-23 Flux distribution along infinite conductivity horizontal wellbore for case 2-3. ............ 45 2-24 Pressure derivative from uniform flux solution at equivalent points for case 2-3......... 47 2-25 Deviation of uniform flux solution... at equivalent points from infinite conductivity solution for case 2-3 (semilog plot)............................................................................ 48 2-26 Deviation of uniform flux solution at equivalent points from infinite conductivity...

  4. A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation

    SciTech Connect (OSTI)

    Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

    2012-03-15T23:59:59.000Z

    Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

  5. Experimental implementation of optimal linear-optical controlled-unitary gates

    E-Print Network [OSTI]

    Karel Lemr; Karol Bartkiewicz; Antonín ?ernoch; Miloslav Dušek; Jan Soubusta

    2014-10-16T23:59:59.000Z

    We show that it is possible to reduce the number of two-qubit gates needed for the construction of an arbitrary controlled-unitary transformation by up to two times using a tunable controlled-phase gate. On the platform of linear optics, where two-qubit gates can only be achieved probabilistically, our method significantly reduces the amount of components and increases success probability of a two-qubit gate. The experimental implementation of our technique presented in this paper for a controlled single-qubit unitary gate demonstrates that only one tunable controlled-phase gate is needed instead of two standard controlled-NOT gates. Thus, not only do we increase success probability by about one order of magnitude (with the same resources), but also avoid the need for conducting quantum non-demolition measurement otherwise required to join two probabilistic gates. Subsequently, we generalize our method to a higher order, showing that n-times controlled gates can be optimized by replacing blocks of controlled-NOT gates with tunable controlled-phase gates.

  6. Pressurizer tank upper support

    DOE Patents [OSTI]

    Baker, Tod H. (O'Hara Township, Allegheny County, PA); Ott, Howard L. (Kiski Township, Armstrong County, PA)

    1994-01-01T23:59:59.000Z

    A pressurizer tank in a pressurized water nuclear reactor is mounted between structural walls of the reactor on a substructure of the reactor, the tank extending upwardly from the substructure. For bearing lateral loads such as seismic shocks, a girder substantially encircles the pressurizer tank at a space above the substructure and is coupled to the structural walls via opposed sway struts. Each sway strut is attached at one end to the girder and at an opposite end to one of the structural walls, and the sway struts are oriented substantially horizontally in pairs aligned substantially along tangents to the wall of the circular tank. Preferably, eight sway struts attach to the girder at 90.degree. intervals. A compartment encloses the pressurizer tank and forms the structural wall. The sway struts attach to corners of the compartment for maximum stiffness and load bearing capacity. A valve support frame carrying the relief/discharge piping and valves of an automatic depressurization arrangement is fixed to the girder, whereby lateral loads on the relief/discharge piping are coupled directly to the compartment rather than through any portion of the pressurizer tank. Thermal insulation for the valve support frame prevents thermal loading of the piping and valves. The girder is shimmed to define a gap for reducing thermal transfer, and the girder is free to move vertically relative to the compartment walls, for accommodating dimensional variation of the pressurizer tank with changes in temperature and pressure.

  7. Pressurizer tank upper support

    DOE Patents [OSTI]

    Baker, T.H.; Ott, H.L.

    1994-01-11T23:59:59.000Z

    A pressurizer tank in a pressurized water nuclear reactor is mounted between structural walls of the reactor on a substructure of the reactor, the tank extending upwardly from the substructure. For bearing lateral loads such as seismic shocks, a girder substantially encircles the pressurizer tank at a space above the substructure and is coupled to the structural walls via opposed sway struts. Each sway strut is attached at one end to the girder and at an opposite end to one of the structural walls, and the sway struts are oriented substantially horizontally in pairs aligned substantially along tangents to the wall of the circular tank. Preferably, eight sway struts attach to the girder at 90[degree] intervals. A compartment encloses the pressurizer tank and forms the structural wall. The sway struts attach to corners of the compartment for maximum stiffness and load bearing capacity. A valve support frame carrying the relief/discharge piping and valves of an automatic depressurization arrangement is fixed to the girder, whereby lateral loads on the relief/discharge piping are coupled directly to the compartment rather than through any portion of the pressurizer tank. Thermal insulation for the valve support frame prevents thermal loading of the piping and valves. The girder is shimmed to define a gap for reducing thermal transfer, and the girder is free to move vertically relative to the compartment walls, for accommodating dimensional variation of the pressurizer tank with changes in temperature and pressure. 10 figures.

  8. Fuel dissipater for pressurized fuel cell generators

    DOE Patents [OSTI]

    Basel, Richard A.; King, John E.

    2003-11-04T23:59:59.000Z

    An apparatus and method are disclosed for eliminating the chemical energy of fuel remaining in a pressurized fuel cell generator (10) when the electrical power output of the fuel cell generator is terminated during transient operation, such as a shutdown; where, two electrically resistive elements (two of 28, 53, 54, 55) at least one of which is connected in parallel, in association with contactors (26, 57, 58, 59), a multi-point settable sensor relay (23) and a circuit breaker (24), are automatically connected across the fuel cell generator terminals (21, 22) at two or more contact points, in order to draw current, thereby depleting the fuel inventory in the generator.

  9. Effectiveness of Using Supply Voltage as Back-Gate Bias in Ground Plane SOI Chris H. Kim1

    E-Print Network [OSTI]

    Kim, Chris H.

    -gate insulator thickness (2nm) for low drain-to-back- gate capacitance and effective tuning of Vt. The front gateEffectiveness of Using Supply Voltage as Back-Gate Bias in Ground Plane SOI MOSFET's Chris H. Kim1 designer has to ensure that this forward bias current through the psub-nwell and drain-body junctions (Fig

  10. Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF

    E-Print Network [OSTI]

    Bowles, David S.

    and operations are listed and illustrated through their application to the Thames Flood Barrier gates

  11. Columnar discharge mode between parallel dielectric barrier electrodes in atmospheric pressure helium

    SciTech Connect (OSTI)

    Hao, Yanpeng; Zheng, Bin; Liu, Yaoge [School of Electric Power, South China University of Technology, Guangzhou 510640 (China)] [School of Electric Power, South China University of Technology, Guangzhou 510640 (China)

    2014-01-15T23:59:59.000Z

    Using a fast-gated intensified charge-coupled device, end- and side-view photographs were taken of columnar discharge between parallel dielectric barrier electrodes in atmospheric pressure helium. Based on three-dimensional images generated from end-view photographs, the number of discharge columns increased, whereas the diameter of each column decreased as the applied voltage was increased. Side-view photographs indicate that columnar discharges exhibited a mode transition ranging from Townsend to glow discharges generated by the same discharge physics as atmospheric pressure glow discharge.

  12. Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

    E-Print Network [OSTI]

    Anlage, Steven

    1 Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects--Thin GateThin Gate Oxide DegradationOxide Degradation #12;2 AcknowledgmentsAcknowledgments University), ECE Miles Wiscombe (UG), ECE #12;3 Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3

  13. Regelation: why does ice melt under pressure?

    E-Print Network [OSTI]

    Chang Q Sun

    2015-01-28T23:59:59.000Z

    Unlike other unusual materials whose bonds contract under compression, the O:H nonbond undergoes contraction and the H-O bond elongation towards O:H and H-O length symmetry in water and ice. The energy drop of the H-O bond dictates the melting point Tm depression of ice. Once the pressure is relieved, the O:H-O bond fully recovers its initial state, resulting in Regelation.

  14. Regelation: why does ice melt under pressure?

    E-Print Network [OSTI]

    Sun, Chang Q

    2015-01-01T23:59:59.000Z

    Unlike other unusual materials whose bonds contract under compression, the O:H nonbond undergoes contraction and the H-O bond elongation towards O:H and H-O length symmetry in water and ice. The energy drop of the H-O bond dictates the melting point Tm depression of ice. Once the pressure is relieved, the O:H-O bond fully recovers its initial state, resulting in Regelation.

  15. Capacitance pressure sensor

    DOE Patents [OSTI]

    Eaton, William P. (Tijeras, NM); Staple, Bevan D. (Albuquerque, NM); Smith, James H. (Albuquerque, NM)

    2000-01-01T23:59:59.000Z

    A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

  16. High pressure counterflow CHF.

    E-Print Network [OSTI]

    Walkush, Joseph Patrick

    1975-01-01T23:59:59.000Z

    This is a report of the experimental results of a program in countercurrent flow critical heat flux. These experiments were performed with Freon 113 at 200 psia in order to model a high pressure water system. An internally ...

  17. Fast adiabatic qubit gates using only $?_z$ control

    E-Print Network [OSTI]

    John M. Martinis; Michael R. Geller

    2014-07-17T23:59:59.000Z

    A controlled-phase gate was demonstrated in superconducting Xmon transmon qubits with fidelity reaching 99.4%, relying on the adiabatic interaction between the |11> and |02> states. Here we explain the theoretical concepts behind this protocol that achieves fast gate times with only $\\sigma_z$ control of the Hamiltonian, based on a theory of non-linear mapping of state errors to a power spectral density and use of optimal window functions. With a solution given in the Fourier basis, optimization is shown to be straightforward for practical cases of an arbitrary state change and finite bandwidth of control signals. We find that errors below $10^{-4}$ are readily achievable for realistic control waveforms.

  18. Improved phase gate reliability in systems with neutral Ising anyons

    E-Print Network [OSTI]

    David J. Clarke; Kirill Shtengel

    2010-09-01T23:59:59.000Z

    Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain Ising anyons and share the feature of having only neutral edge excitations. In this note, we show that these proposals can be combined with the recently proposed "sack geometry" for implementation of a phase gate in order to conduct robust universal quantum computation. In addition, we propose a general method for adjusting edge tunneling rates in such systems, which is necessary for the control of interferometric devices. The error rate for the phase gate in neutral Ising systems is parametrically smaller than for a similar geometry in which the edge modes carry charge: it goes as $T^3$ rather than $T$ at low temperatures. At zero temperature, the phase variance becomes constant at long times rather than carrying a logarithmic divergence.

  19. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Abdelhadi Belouad; Ahmed Jellal; Youness Zahidi

    2015-05-29T23:59:59.000Z

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  20. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Belouad, Abdelhadi; Zahidi, Youness

    2015-01-01T23:59:59.000Z

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  1. Reducing the quantum computing overhead with complex gate distillation

    E-Print Network [OSTI]

    Guillaume Duclos-Cianci; David Poulin

    2014-03-20T23:59:59.000Z

    In leading fault-tolerant quantum computing schemes, accurate transformation are obtained by a two-stage process. In a first stage, a discrete, universal set of fault-tolerant operations is obtained by error-correcting noisy transformations and distilling resource states. In a second stage, arbitrary transformations are synthesized to desired accuracy by combining elements of this set into a circuit. Here, we present a scheme which merges these two stages into a single one, directly distilling complex transformations. We find that our scheme can reduce the total overhead to realize certain gates by up to a few orders of magnitude. In contrast to other schemes, this efficient gate synthesis does not require computationally intensive compilation algorithms, and a straightforward generalization of our scheme circumvents compilation and synthesis altogether.

  2. Entangling characterization of (SWAP)1/m and Controlled unitary gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2008-01-01T23:59:59.000Z

    We study the entangling power and perfect entangler nature of (SWAP)1/m, for m>=1, and controlled unitary (CU) gates. It is shown that (SWAP)1/2 is the only perfect entangler in the family. On the other hand, a subset of CU which is locally equivalent to CNOT is identified. It is shown that the subset, which is a perfect entangler, must necessarily possess the maximum entangling power.

  3. Entangling characterization of (SWAP)1/m and Controlled unitary gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2009-01-05T23:59:59.000Z

    We study the entangling power and perfect entangler nature of (SWAP)1/m, for m>=1, and controlled unitary (CU) gates. It is shown that (SWAP)1/2 is the only perfect entangler in the family. On the other hand, a subset of CU which is locally equivalent to CNOT is identified. It is shown that the subset, which is a perfect entangler, must necessarily possess the maximum entangling power.

  4. Photon-photon gates in Bose-Einstein condensates

    E-Print Network [OSTI]

    Arnaud Rispe; Bing He; Christoph Simon

    2010-09-30T23:59:59.000Z

    It has recently been shown that light can be stored in Bose-Einstein condensates for over a second. Here we propose a method for realizing a controlled phase gate between two stored photons. The photons are both stored in the ground state of the effective trapping potential inside the condensate. The collision-induced interaction is enhanced by adiabatically increasing the trapping frequency and by using a Feshbach resonance. A controlled phase shift of $\\pi$ can be achieved in one second.

  5. Polar Express Cards Can Only Exit Onto 3rd Ave at the Main Entry/Exit Gate, Not on 2nd Ave gate.

    E-Print Network [OSTI]

    Wagner, Diane

    Polar Express Cards Can Only Exit Onto 3rd Ave at the Main Entry/Exit Gate, Not on 2nd Ave gate Parking with UAF Polar Express Cards: Basic Explanation: Use Your Polar Express Card for Entry and Exit. Problems? If card entry doesn't work, just pull a normal parking ticket and stop in at the booth or main

  6. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    SciTech Connect (OSTI)

    Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

    2009-08-11T23:59:59.000Z

    The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

  7. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry, E-mail: Dmitry.Veksler@sematech.org, E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi, E-mail: Dmitry.Veksler@sematech.org, E-mail: gennadi.bersuker@sematech.org [SEMATECH Inc., 257 Fuller Rd., Albany, New York 12203 (United States)

    2014-01-21T23:59:59.000Z

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  8. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    SciTech Connect (OSTI)

    Douglas Nelson

    2011-05-31T23:59:59.000Z

    The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: â?¢ Expanded and updated fuel cell and vehicle technologies education programs; â?¢ Conducted industry directed research in three thrust areas â?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; â?¢ Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; â?¢ Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Techâ??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

  9. Use of dMLC for implementation of dynamic respiratory-gated radiation therapy

    SciTech Connect (OSTI)

    Pepin, Eric W.; Wu, Huanmei [Purdue School of Engineering Technology, IUPUI, Indianapolis, Indiana 46202 (United States)] [Purdue School of Engineering Technology, IUPUI, Indianapolis, Indiana 46202 (United States); Shirato, Hiroki [Hokkaido University School of Medicine, Sapporo 060-8638 (Japan)] [Hokkaido University School of Medicine, Sapporo 060-8638 (Japan)

    2013-10-15T23:59:59.000Z

    Purpose: To simulate and evaluate the use of dynamic multileaf collimators (dMLC) in respiratory gating to compensate for baseline drift.Methods: Tumor motion tracking data from 30 lung tumors over 322 treatment fractions was analyzed with the finite state model. A dynamic respiratory gating window was established in real-time by determining the average positions during the previous two end-of-expiration breathing phases and centering the dMLC aperture on a weighted average of these positions. A simulated dMLC with physical motion constraints was used in dynamic gating treatment simulations. Fluence maps were created to provide a statistical description of radiation delivery for each fraction. Duty cycle was also calculated for each fraction.Results: The average duty cycle was 2.3% greater under dynamic gating conditions. Dynamic gating also showed higher fluences and less tumor obstruction. Additionally, dynamic gating required fewer beam toggles and each delivery period was longer on average than with static gating.Conclusions: The use of dynamic gating showed better performance than static gating and the physical constraints of a dMLC were shown to not be an impediment to dynamic gating.

  10. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2011-04-01T23:59:59.000Z

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  11. A bit-serial floating point multiply/add architecture for signal processing applications

    E-Print Network [OSTI]

    Williams, Bertrand Jeffery

    1983-01-01T23:59:59.000Z

    the order and size of the sign, exponent, and mantissa of t' he floating point number. The value of the radix ls also specified by the format. For a bit-serial floating point architecture consideration must be given to the order In e (i) b3 0 D a2 b2... silicon chip. Design complexity fs evaluated by the area requirements of the circuitry at the technology resolution of a 0. 2 mi I (5 um) minimum gate size. This would allow perhaps 10, 000 transistors on a 200 ml1 square of silicon (15, 16, 17, 18...

  12. Strategic Focus Points

    Office of Environmental Management (EM)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742 33Frequently AskedEnergyIssues DOE's NuclearSpurringSteam Systems SteamR.Strategic Focus Points

  13. A point of order 8

    E-Print Network [OSTI]

    Semjon Adlaj

    2011-10-03T23:59:59.000Z

    A formula expressing a point of order 8 on an elliptic curve, in terms of the roots of the associated cubic polynomial, is given. Doubling such a point yields a point of order 4 distinct from the well-known points of order 4 given in standard references such as "A course of Modern Analysis" by Whittaker and Watson.

  14. Pressure suppression containment system

    DOE Patents [OSTI]

    Gluntz, D.M.; Townsend, H.E.

    1994-03-15T23:59:59.000Z

    A pressure suppression containment system includes a containment vessel surrounding a reactor pressure vessel and defining a drywell therein containing a non-condensable gas. An enclosed wetwell pool is disposed inside the containment vessel, and a gravity driven cooling system (GDCS) pool is disposed above the wetwell pool in the containment vessel. The wetwell pool includes a plenum for receiving the non-condensable gas carried with steam from the drywell following a loss-of-coolant-accident (LOCA). The wetwell plenum is vented to a plenum above the GDCS pool following the LOCA for suppressing pressure rise within the containment vessel. A method of operation includes channeling steam released into the drywell following the LOCA into the wetwell pool for cooling along with the non-condensable gas carried therewith. The GDCS pool is then drained by gravity, and the wetwell plenum is vented into the GDCS plenum for channeling the non-condensable gas thereto. 6 figures.

  15. Oxygen partial pressure sensor

    DOE Patents [OSTI]

    Dees, D.W.

    1994-09-06T23:59:59.000Z

    A method for detecting oxygen partial pressure and an oxygen partial pressure sensor are provided. The method for measuring oxygen partial pressure includes contacting oxygen to a solid oxide electrolyte and measuring the subsequent change in electrical conductivity of the solid oxide electrolyte. A solid oxide electrolyte is utilized that contacts both a porous electrode and a nonporous electrode. The electrical conductivity of the solid oxide electrolyte is affected when oxygen from an exhaust stream permeates through the porous electrode to establish an equilibrium of oxygen anions in the electrolyte, thereby displacing electrons throughout the electrolyte to form an electron gradient. By adapting the two electrodes to sense a voltage potential between them, the change in electrolyte conductivity due to oxygen presence can be measured. 1 fig.

  16. Pressure suppression containment system

    DOE Patents [OSTI]

    Gluntz, Douglas M. (San Jose, CA); Townsend, Harold E. (San Jose, CA)

    1994-03-15T23:59:59.000Z

    A pressure suppression containment system includes a containment vessel surrounding a reactor pressure vessel and defining a drywell therein containing a non-condensable gas. An enclosed wetwell pool is disposed inside the containment vessel, and a gravity driven cooling system (GDCS) pool is disposed above the wetwell pool in the containment vessel. The wetwell pool includes a plenum for receiving the non-condensable gas carried with steam from the drywell following a loss-of coolant-accident (LOCA). The wetwell plenum is vented to a plenum above the GDCS pool following the LOCA for suppressing pressure rise within the containment vessel. A method of operation includes channeling steam released into the drywell following the LOCA into the wetwell pool for cooling along with the non-condensable gas carried therewith. The GDCS pool is then drained by gravity, and the wetwell plenum is vented into the GDCS plenum for channeling the non-condensable gas thereto.

  17. Operator-Schmidt decomposition and the geometrical edges of two-qubit gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2011-06-30T23:59:59.000Z

    Nonlocal two-qubit quantum gates are represented by canonical decomposition or equivalently by operator-Schmidt decomposition. The former decomposition results in geometrical representation such that all the two-qubit gates form tetrahedron within which perfect entanglers form a polyhedron. On the other hand, it is known from the later decomposition that Schmidt number of nonlocal gates can be either 2 or 4. In this work, some aspects of later decomposition are investigated. It is shown that two gates differing by local operations possess same set of Schmidt coefficients. Employing geometrical method, it is established that Schmidt number 2 corresponds to controlled unitary gates. Further, all the edges of tetrahedron and polyhedron are characterized using Schmidt strength, a measure of operator entanglement. It is found that one edge of the tetrahedron possesses the maximum Schmidt strength, implying that all the gates in the edge are maximally entangled.

  18. Operator-Schmidt decomposition and the geometrical edges of two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2010-01-01T23:59:59.000Z

    Nonlocal two-qubit quantum gates are represented by canonical decomposition or equivalently by operator-Schmidt decomposition. The former decomposition results in geometrical representation such that all the two-qubit gates form tetrahedron within which perfect entanglers form a polyhedron. On the other hand, it is known from the later decomposition that Schmidt number of nonlocal gates can be either 2 or 4. In this work, some aspects of later decomposition are investigated. It is shown that two gates differing by local operations possess same set of Schmidt coefficients. Employing geometrical method, it is established that Schmidt number 2 corresponds to controlled unitary gates. Further, all the edges of tetrahedron and polyhedron are characterized using Schmidt strength, a measure of operator entanglement. It is found that one edge of the tetrahedron possesses the maximum Schmidt strength, implying that all the gates in the edge are maximally entangled.

  19. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01T23:59:59.000Z

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  20. Plating under reduced pressure

    SciTech Connect (OSTI)

    Dini, J.W.; Beat, T.G.; Cowden, W.C. (Lawrence Livermore National Lab., CA (United States)); Ryan, L.E.; Hewitt, W.B. (TRW, Inc., Redondo Beach, CA (United States))

    1992-06-01T23:59:59.000Z

    Plating under reduced pressure was evaluated for both electroless nickel and electrodeposited copper systems. The objective was to reduce pitting of these coatings thereby further enhancing their usage for diamond turning applications. Cursory experiments with electroless nickel showed reduced porosity when deposition was done at around 500 torr. Detailed experiments with electrodeposited copper at around 100 torr provided similar results. Scanning tunneling microscopy was effectively used to show the improvement in the copper deposits plated under reduced pressure. Benefits included reduced surface roughness and finer and denser grain structure.

  1. Saltstone Osmotic Pressure

    SciTech Connect (OSTI)

    Nichols, Ralph L.; Dixon, Kenneth L.

    2013-09-23T23:59:59.000Z

    Recent research into the moisture retention properties of saltstone suggest that osmotic pressure may play a potentially significant role in contaminant transport (Dixon et al., 2009 and Dixon, 2011). The Savannah River Remediation Closure and Disposal Assessments Group requested the Savannah River National Laboratory (SRNL) to conduct a literature search on osmotic potential as it relates to contaminant transport and to develop a conceptual model of saltstone that incorporates osmotic potential. This report presents the findings of the literature review and presents a conceptual model for saltstone that incorporates osmotic potential. The task was requested through Task Technical Request HLW-SSF-TTR-2013-0004. Simulated saltstone typically has very low permeability (Dixon et al. 2008) and pore water that contains a large concentration of dissolved salts (Flach and Smith 2013). Pore water in simulated saltstone has a high salt concentration relative to pore water in concrete and groundwater. This contrast in salt concentration can generate high osmotic pressures if simulated saltstone has the properties of a semipermeable membrane. Estimates of osmotic pressure using results from the analysis of pore water collected from simulated saltstone show that an osmotic pressure up to 2790 psig could be generated within the saltstone. Most semi-permeable materials are non-ideal and have an osmotic efficiency <1 and as a result actual osmotic pressures are less than theoretical pressures. Observations from laboratory tests of simulated saltstone indicate that it may exhibit the behavior of a semi-permeable membrane. After several weeks of back pressure saturation in a flexible wall permeameter (FWP) the membrane containing a simulated saltstone sample appeared to have bubbles underneath it. Upon removal from the FWP the specimen was examined and it was determined that the bubbles were due to liquid that had accumulated between the membrane and the sample. One possible explanation for the accumulation of solution between the membrane and sample is the development of osmotic pressure within the sample. Osmotic pressure will affect fluid flow and contaminant transport and may result in the changes to the internal structure of the semi-permeable material. B?nard et al. 2008 reported swelling of wet cured Portland cement mortars containing salts of NaNO{sub 3}, KNO{sub 3}, Na{sub 3}PO{sub 4}x12H {sub 2}O, and K{sub 3}PO{sub 4} when exposed to a dilute solution. Typically hydraulic head is considered the only driving force for groundwater in groundwater models. If a low permeability material containing a concentrated salt solution is present in the hydrogeologic sequence large osmotic pressures may develop and lead to misinterpretation of groundwater flow and solute transport. The osmotic pressure in the semi-permeable material can significantly impact groundwater flow in the vicinity of the semi-permeable material. One possible outcome is that groundwater will flow into the semi-permeable material resulting in hydrologic containment within the membrane. Additionally, hyperfiltration can occur within semi-permeable materials when water moves through a membrane into the more concentrated solution and dissolved constituents are retained in the lower concentration solution. Groundwater flow and transport equations that incorporate chemical gradients (osmosis) have been developed. These equations are referred to as coupled flow equations. Currently groundwater modeling to assess the performance of saltstone waste forms is conducted using the PORFLOW groundwater flow and transport model. PORFLOW does not include coupled flow from chemico-osmotic gradients and therefore numerical simulation of the effect of coupled flow on contaminant transport in and around saltstone cannot be assessed. Most natural semi-permeable membranes are non-ideal membranes and do not restrict all movement of solutes and as a result theoretical osmotic potential is not realized. Osmotic efficiency is a parameter in the coupled flow equation that accounts for the

  2. Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses

    E-Print Network [OSTI]

    Emily Mount; Chingiz Kabytayev; Stephen Crain; Robin Harper; So-Young Baek; Geert Vrijsen; Steven Flammia; Kenneth R. Brown; Peter Maunz; Jungsang Kim

    2015-04-06T23:59:59.000Z

    The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times (Langer et al., 2005), high qubit measurement fidelity (Noek et al., 2013), and universal logic gates (Home et al., 2009). The quality of quantum logic gate operations on trapped ion qubits has been limited by the stability of the control fields at the ion location used to implement the gate operations. For this reason, the logic gates utilizing microwave fields (Brown et al., 2011; Shappert et al., 2013; Harty et al., 2014) have shown gate fidelities several orders of magnitude better than those using laser fields (Knill et al., 2008; Benhelm et al., 2008; Ballance et al., 2014). Here, we demonstrate low-error single-qubit gates performed using stimulated Raman transitions on an ion qubit trapped in a microfabricated chip trap. Gate errors are measured using a randomized benchmarking protocol (Knill et al., 2008; Wallman et al., 2014; Magesan et al., 2012), where amplitude error in the control beam is compensated using various pulse sequence techniques (Wimperis, 1994; Low et al., 2014). Using B2 compensation (Wimperis, 1994), we demonstrate single qubit gates with an average error per randomized Clifford group gate of $3.6(3)\\times10^{-4}$. We also show that compact palindromic pulse compensation sequences (PD$n$) (Low et al., 2014) compensate for amplitude errors as designed.

  3. 2006-2010 GATE program at Ohio State University Center for Automotive...

    Energy Savers [EERE]

    Ohio State University Center for Automotive Research: Modeling, control and system integration of advanced automotive propulsion systems 2006-2010 GATE program at Ohio State...

  4. How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated

    E-Print Network [OSTI]

    Mudd, John

    2009-05-15T23:59:59.000Z

    , utilizing some of the strategies, for the implementation of a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated....

  5. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Broader source: Energy.gov [DOE]

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  6. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and James Bartridge (CEC) discuss electric vehicle technologies with Fraser Murison Smith (right) of i-GATE NEST client, ElectraDrive. The collaborative effort is...

  7. International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control

    E-Print Network [OSTI]

    Ferrara, Katherine W.

    International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Challenges Explorations Grant (see program overview) to develop crop seeds with endophytic fungal

  8. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Info (EERE)

    TOOL Name: Fast Out of the Gate: How Developing Asian Countries can Prepare to Access International Green Growth Financing AgencyCompany Organization: USAID ComplexityEase...

  9. Local implementations of non-local quantum gates in linear entangled channel

    E-Print Network [OSTI]

    Debashis Saha; Sanket Nandan; Prasanta K. Panigrahi

    2014-08-03T23:59:59.000Z

    In this paper, we demonstrate n-party controlled unitary gate implementations locally on arbitrary remote state through linear entangled channel where control parties share entanglement with the adjacent control parties and only one of them shares entanglement with the target party. In such a network, we describe the protocol of simultaneous implementation of controlled-Hermitian gate starting from three party scenario. We also explicate the implementation of three party controlled-Unitary gate, a generalized form of To?oli gate and subsequently generalize the protocol for n-party using minimal cost.

  10. University of Illinois at Urbana Champaigns GATE Center forAdvanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Engines Research Domains for GATE * Biofuels and Properties * Fuel Injection Control and Optimization * Electrospray Systems for Fuels * Fuel Injection, Ignition, Combustion and...

  11. Reactor pressure vessel nozzle

    DOE Patents [OSTI]

    Challberg, R.C.; Upton, H.A.

    1994-10-04T23:59:59.000Z

    A nozzle for joining a pool of water to a nuclear reactor pressure vessel includes a tubular body having a proximal end joinable to the pressure vessel and a distal end joinable in flow communication with the pool. The body includes a flow passage therethrough having in serial flow communication a first port at the distal end, a throat spaced axially from the first port, a conical channel extending axially from the throat, and a second port at the proximal end which is joinable in flow communication with the pressure vessel. The inner diameter of the flow passage decreases from the first port to the throat and then increases along the conical channel to the second port. In this way, the conical channel acts as a diverging channel or diffuser in the forward flow direction from the first port to the second port for recovering pressure due to the flow restriction provided by the throat. In the backflow direction from the second port to the first port, the conical channel is a converging channel and with the abrupt increase in flow area from the throat to the first port collectively increase resistance to flow therethrough. 2 figs.

  12. St Andrews Recycling Points Recycling Points are situated locally to

    E-Print Network [OSTI]

    St Andrews, University of

    St Andrews Recycling Points Recycling Points are situated locally to allow you to recycle the following materials: To find your nearest Recycling Point please visit www.fifedirect.org.uk/wasteaware or call the Recycling Helpline on 08451 55 00 22. R&A GOLF CLUB OLD COURSE HOTEL UNIVERSITY NORTH HAUGH

  13. VAPOR PRESSURES AND HEATS OF VAPORIZATION OF PRIMARY COAL TARS

    SciTech Connect (OSTI)

    Eric M. Suuberg; Vahur Oja

    1997-07-01T23:59:59.000Z

    This project had as its main focus the determination of vapor pressures of coal pyrolysis tars. It involved performing measurements of these vapor pressures and from them, developing vapor pressure correlations suitable for use in advanced pyrolysis models (those models which explicitly account for mass transport limitations). This report is divided into five main chapters. Each chapter is a relatively stand-alone section. Chapter A reviews the general nature of coal tars and gives a summary of existing vapor pressure correlations for coal tars and model compounds. Chapter B summarizes the main experimental approaches for coal tar preparation and characterization which have been used throughout the project. Chapter C is concerned with the selection of the model compounds for coal pyrolysis tars and reviews the data available to us on the vapor pressures of high boiling point aromatic compounds. This chapter also deals with the question of identifying factors that govern the vapor pressures of coal tar model materials and their mixtures. Chapter D covers the vapor pressures and heats of vaporization of primary cellulose tars. Chapter E discusses the results of the main focus of this study. In summary, this work provides improved understanding of the volatility of coal and cellulose pyrolysis tars. It has resulted in new experimentally verified vapor pressure correlations for use in pyrolysis models. Further research on this topic should aim at developing general vapor pressure correlations for all coal tars, based on their molecular weight together with certain specific chemical characteristics i.e. hydroxyl group content.

  14. Ocean Gate, New Jersey: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri: EnergyExcellence SeedNunn,andOasys WaterCity, NewGate, New Jersey:

  15. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbelllong version) The U.S.short version)Gate

  16. Dosimetric evaluation of the interplay effect in respiratory-gated RapidArc radiation therapy

    SciTech Connect (OSTI)

    Riley, Craig [Department of Radiation Oncology, University of Pittsburgh School of Medicine, Pittsburgh, Pennsylvania 15213 (United States)] [Department of Radiation Oncology, University of Pittsburgh School of Medicine, Pittsburgh, Pennsylvania 15213 (United States); Yang, Yong, E-mail: yangy2@upmc.edu; Li, Tianfang; Zhang, Yongqian; Heron, Dwight E.; Huq, M. Saiful [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)] [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)

    2014-01-15T23:59:59.000Z

    Purpose: Volumetric modulated arc therapy (VMAT) with gating capability has had increasing adoption in many clinics in the United States. In this new technique, dose rate, gantry rotation speed, and the leaf motion speed of multileaf collimators (MLCs) are modulated dynamically during gated beam delivery to achieve highly conformal dose coverage of the target and normal tissue sparing. Compared with the traditional gated intensity-modulated radiation therapy technique, this complicated beam delivery technique may result in larger dose errors due to the intrafraction tumor motion. The purpose of this work is to evaluate the dosimetric influence of the interplay effect for the respiration-gated VMAT technique (RapidArc, Varian Medical Systems, Palo Alto, CA). Our work consisted of two parts: (1) Investigate the interplay effect for different target residual errors during gated RapidArc delivery using a one-dimensional moving phantom capable of producing stable sinusoidal movement; (2) Evaluate the dosimetric influence in ten clinical patients’ treatment plans using a moving phantom driven with a patient-specific respiratory curve. Methods: For the first part of this study, four plans were created with a spherical target for varying residual motion of 0.25, 0.5, 0.75, and 1.0 cm. Appropriate gating windows were applied for each. The dosimetric effect was evaluated using EDR2 film by comparing the gated delivery with static delivery. For the second part of the project, ten gated lung stereotactic body radiotherapy cases were selected and reoptimized to be delivered by the gated RapidArc technique. These plans were delivered to a phantom, and again the gated treatments were compared to static deliveries by the same methods. Results: For regular sinusoidal motion, the dose delivered to the target was not substantially affected by the gating windows when evaluated with the gamma statistics, suggesting the interplay effect has a small role in respiratory-gated RapidArc therapy. Varied results were seen when gated therapy was performed on the patient plans that could only be attributed to differences in patient respiratory patterns. Patients whose plans had the largest percentage of pixels failing the gamma statistics exhibited irregular breathing patterns including substantial interpatient variation in depth of respiration. Conclusions: The interplay effect has a limited impact on gated RapidArc therapy when evaluated with a linear phantom. Variations in patient breathing patterns, however, are of much greater clinical significance. Caution must be taken when evaluating patients’ respiratory efforts for gated arc therapy.

  17. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S [Madurai Medical College ' Govt. Rajaji Hospital, Madurai (India)

    2014-06-01T23:59:59.000Z

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  18. Pressure suppression system

    DOE Patents [OSTI]

    Gluntz, D.M.

    1994-10-04T23:59:59.000Z

    A pressure suppression system includes a containment vessel surrounding a reactor pressure vessel and defining a drywell therein containing a non-condensable gas. An enclosed wetwell pool is disposed inside the containment vessel, and an enclosed gravity driven cooling system (GDCS) pool is disposed above the wetwell pool in the containment vessel. The GDCS pool includes a plenum for receiving through an inlet the non-condensable gas carried with steam from the drywell following a loss-of-coolant accident (LOCA). A condenser is disposed in the GDCS plenum for condensing the steam channeled therein and to trap the non-condensable gas therein. A method of operation includes draining the GDCS pool following the LOCA and channeling steam released into the drywell following the LOCA into the GDCS plenum for cooling along with the non-condensable gas carried therewith for trapping the gas therein. 3 figs.

  19. Continuous pressure letdown system

    DOE Patents [OSTI]

    Sprouse, Kenneth M.; Matthews, David R.; Langowski, Terry

    2010-06-08T23:59:59.000Z

    A continuous pressure letdown system connected to a hopper decreases a pressure of a 2-phase (gas and solid) dusty gas stream flowing through the system. The system includes a discharge line for receiving the dusty gas from the hopper, a valve, a cascade nozzle assembly positioned downstream of the discharge line, a purge ring, an inert gas supply connected to the purge ring, an inert gas throttle, and a filter. The valve connects the hopper to the discharge line and controls introduction of the dusty gas stream into the discharge line. The purge ring is connected between the discharge line and the cascade nozzle assembly. The inert gas throttle controls a flow rate of an inert gas into the cascade nozzle assembly. The filter is connected downstream of the cascade nozzle assembly.

  20. High pressure furnace

    DOE Patents [OSTI]

    Morris, D.E.

    1993-09-14T23:59:59.000Z

    A high temperature high pressure furnace has a hybrid partially externally heated construction. A metallic vessel fabricated from an alloy having a composition of at least 45% nickel, 15% chrome, and 10% tungsten is utilized (the preferred alloy including 55% nickel, 22% chrome, 14% tungsten, 2% molybdenum, 3% iron (maximum) and 5% cobalt (maximum)). The disclosed alloy is fabricated into 11/4 or 2 inch, 32 mm or 50 mm bar stock and has a length of about 22 inches, 56 cm. This bar stock has an aperture formed therein to define a closed high temperature, high pressure oxygen chamber. The opposite and closed end of the vessel is provided with a small blind aperture into which a thermocouple can be inserted. The closed end of the vessel is inserted into an oven, preferably heated by standard nickel chrome electrical elements and having a heavily insulated exterior. 19 figures.

  1. High pressure oxygen furnace

    DOE Patents [OSTI]

    Morris, Donald E. (Kensington, CA)

    1992-01-01T23:59:59.000Z

    A high temperature high pressure oxygen furnace having a hybrid partially externally heated construction is disclosed. A metallic bar fabricated from an alloy having a composition of at least 45% nickel, 15% chrome, and 10% tungsten is utilized (the preferred alloy including 55% nickel, 22% chrome, 14% tungsten, 2% molybdenum, 3% iron (maximum) and 5% cobalt (maximum). The disclosed alloy is fabricated into 11/4 inch bar stock and has a length of about 17 inches. This bar stock is gun drilled for over 16 inches of its length with 0.400 inch aperture to define a closed high temperature, high pressure oxygen chamber. The opposite and closed end of the bar is provided with a small support aperture into which both a support and a thermocouple can be inserted. The closed end of the gun drilled bar is inserted into an oven, preferably heated by standard nickel chrome electrical elements and having a heavily insulated exterior.

  2. High pressure oxygen furnace

    DOE Patents [OSTI]

    Morris, D.E.

    1992-07-14T23:59:59.000Z

    A high temperature high pressure oxygen furnace having a hybrid partially externally heated construction is disclosed. A metallic bar fabricated from an alloy having a composition of at least 45% nickel, 15% chrome, and 10% tungsten is utilized, the preferred alloy including 55% nickel, 22% chrome, 14% tungsten, 2% molybdenum, 3% iron (maximum) and 5% cobalt (maximum). The disclosed alloy is fabricated into 11/4 inch bar stock and has a length of about 17 inches. This bar stock is gun drilled for over 16 inches of its length with 0.400 inch aperture to define a closed high temperature, high pressure oxygen chamber. The opposite and closed end of the bar is provided with a small support aperture into which both a support and a thermocouple can be inserted. The closed end of the gun drilled bar is inserted into an oven, preferably heated by standard nickel chrome electrical elements and having a heavily insulated exterior. 5 figs.

  3. Pressure suppression system

    DOE Patents [OSTI]

    Gluntz, Douglas M. (San Jose, CA)

    1994-01-01T23:59:59.000Z

    A pressure suppression system includes a containment vessel surrounding a reactor pressure vessel and defining a drywell therein containing a non-condensable gas. An enclosed wetwell pool is disposed inside the containment vessel, and an enclosed gravity driven cooling system (GDCS) pool is disposed above the wetwell pool in the containment vessel. The GDCS pool includes a plenum for receiving through an inlet the non-condensable gas carried with steam from the drywell following a loss-of-coolant accident (LOCA). A condenser is disposed in the GDCS plenum for condensing the steam channeled therein and to trap the non-condensable gas therein. A method of operation includes draining the GDCS pool following the LOCA and channeling steam released into the drywell following the LOCA into the GDCS plenum for cooling along with the non-condensable gas carried therewith for trapping the gas therein.

  4. High pressure furnace

    DOE Patents [OSTI]

    Morris, Donald E. (Kensington, CA)

    1993-01-01T23:59:59.000Z

    A high temperature high pressure furnace has a hybrid partially externally heated construction. A metallic vessel fabricated from an alloy having a composition of at least 45% nickel, 15% chrome, and 10% tungsten is utilized (the preferred alloy including 55% nickel, 22% chrome, 14% tungsten, 2% molybdenum, 3% iron (maximum) and 5% cobalt (maximum). The disclosed alloy is fabricated into 11/4 or 2 inch, 32 mm or 50 mm bar stock and has a length of about 22 inches, 56 cm. This bar stock has an aperture formed therein to define a closed high temperature, high pressure oxygen chamber. The opposite and closed end of the vessel is provided with a small blind aperture into which a thermocouple can be inserted. The closed end of the vessel is inserted into an oven, preferably heated by standard nickel chrome electrical elements and having a heavily insulated exterior.

  5. High pressure storage vessel

    DOE Patents [OSTI]

    Liu, Qiang

    2013-08-27T23:59:59.000Z

    Disclosed herein is a composite pressure vessel with a liner having a polar boss and a blind boss a shell is formed around the liner via one or more filament wrappings continuously disposed around at least a substantial portion of the liner assembly combined the liner and filament wrapping have a support profile. To reduce susceptible to rupture a locally disposed filament fiber is added.

  6. Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

    E-Print Network [OSTI]

    Hashemi, Pouya

    A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-?/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI ...

  7. High pressure, high current, low inductance, high reliability sealed terminals

    DOE Patents [OSTI]

    Hsu, John S. (Oak Ridge, TN) [Oak Ridge, TN; McKeever, John W. (Oak Ridge, TN) [Oak Ridge, TN

    2010-03-23T23:59:59.000Z

    The invention is a terminal assembly having a casing with at least one delivery tapered-cone conductor and at least one return tapered-cone conductor routed there-through. The delivery and return tapered-cone conductors are electrically isolated from each other and positioned in the annuluses of ordered concentric cones at an off-normal angle. The tapered cone conductor service can be AC phase conductors and DC link conductors. The center core has at least one service conduit of gate signal leads, diagnostic signal wires, and refrigerant tubing routed there-through. A seal material is in direct contact with the casing inner surface, the tapered-cone conductors, and the service conduits thereby hermetically filling the interstitial space in the casing interior core and center core. The assembly provides simultaneous high-current, high-pressure, low-inductance, and high-reliability service.

  8. Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate the implementation of numerous distinct power transistor gate drivers, the control signal insulation is becoming more results will be shown in order to validate the functionality. I. INTRODUCTION An insulation system

  9. Classification : Original Article VOLTAGE-GATED SODIUM CHANNELS POTENTIATE THE INVASIVE

    E-Print Network [OSTI]

    Boyer, Edmond

    - gated sodium channels in non-small-cell lung cancer cell lines. Functional voltage-gated sodium channels cancerous cell lines H23, H460 and Calu-1 possess functional sodium channels while normal and weakly metastatic cell lines do not. While all the cell lines expressed mRNA for numerous sodium channel isoforms

  10. [ ]February 2014 The original 1957 Gates pile driving formula is an empirically derived dynamic formula

    E-Print Network [OSTI]

    Harms, Kyle E.

    [ ]February 2014 PROBLEM The original 1957 Gates pile driving formula is an empirically derived dynamic formula that is used to predict pile capacity in the field during pile installation.The original Gates formula tends to over-predict pile capacity for low driving resistances and under-predict pile

  11. Gated Si nanowires for large thermoelectric power factors Neophytos Neophytou1

    E-Print Network [OSTI]

    1 Gated Si nanowires for large thermoelectric power factors Neophytos Neophytou1 and Hans Kosina2 1.Neophytou@warwick.ac.uk Abstract We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients

  12. Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy

    E-Print Network [OSTI]

    Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy monitoring and gating purposes. The fiber-optic stethoscope system offers a novel approach to measuring cardiac activity that, unlike the ECG, is immune to electromagnetic effects. The fiber-optic stethoscope

  13. An Array-Based Test Circuit for Fully Automated Gate Dielectric Breakdown Characterization

    E-Print Network [OSTI]

    Kim, Chris H.

    An Array-Based Test Circuit for Fully Automated Gate Dielectric Breakdown Characterization John for efficiently characterizing gate dielectric breakdown. Such a design is highly beneficial when studying this statistical process, where up to thousands of samples are needed to create an accurate time to breakdown

  14. Efficient polarization gating of high-order harmonic generation by polarization-shaped ultrashort pulses

    E-Print Network [OSTI]

    Silberberg, Yaron

    Polarization gating of high-order harmonic generation takes advantage of the significant reduction of har for generation of polarization gated pulses using wave-plate combinations is inefficient, and propose photon energy radiation from the harmonic spectrum. Need- less to say, the generation of near single

  15. Gating Currents from Kv7 Channels Carrying Neuronal Hyperexcitability Mutations in the Voltage-Sensing Domain

    E-Print Network [OSTI]

    Bezanilla, Francisco

    unable to provide a detailed assessment of the structural rearrangements underlying channel gating.2 channels both functionally and structurally, were used for these experiments. The data obtained showed activation of gating-pore currents at depolarized potentials. These results reveal that distinct molecular

  16. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)] [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)

    2014-03-21T23:59:59.000Z

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  17. Controlling the Performance of a Three-Terminal Molecular Transistor: Conformational versus Conventional Gating

    E-Print Network [OSTI]

    Pandey, Ravi

    University, Houghton, Michigan 49931, United States Shashi P. Karna* U.S. Army Research Laboratory, Weapons *S Supporting Information ABSTRACT: The effect of conformational changes in the gate arm of a three of the gate field. The current modulation is found to reach its maximum only under exclusive effect of voltage

  18. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  19. Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*

    E-Print Network [OSTI]

    Beebe, David J.

    Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

  20. Probabilistic quantum gates between remote atoms through interference of optical frequency qubits

    E-Print Network [OSTI]

    Madsen, Martin John

    Probabilistic quantum gates between remote atoms through interference of optical frequency qubits L gates on remote trapped atom qubits through interference of optical frequency qubits. The method does be localized well under the Lamb-Dicke limit through laser cooling in a strong trap, the elimination

  1. High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

    E-Print Network [OSTI]

    1 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Zhonghe as the gate insulator for low temperature (SiGe thin film transistors (TFTs) has been between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative

  2. Economics of Steam Pressure Reduction

    E-Print Network [OSTI]

    Sylva, D. M.

    Economics of Steam Pressure Reduction is a technical paper that addresses the operating and economic advantages associated with the program to lower the steam operating pressure. Evaluation of a testing program will be discussed. The paper...

  3. Analytical approach to swift non-leaky entangling gates in superconducting qubits

    E-Print Network [OSTI]

    Sophia E. Economou; Edwin Barnes

    2014-11-03T23:59:59.000Z

    We develop schemes for designing pulses that implement fast and precise entangling quantum gates in superconducting qubit systems despite the presence of nearby harmful transitions. Our approach is based on purposely involving the nearest harmful transition in the quantum evolution instead of trying to avoid it. Using analytical tools, we design simple microwave control fields that implement maximally entangling gates with fidelities exceeding 99% in times as low as 40 ns. We demonstrate our approach in a two-qubit circuit QED system by designing the two most important quantum entangling gates: a conditional-NOT gate and a conditional-Z gate. Our results constitute an important step toward overcoming the problem of spectral crowding, one of the primary challenges in controlling multi-qubit systems.

  4. A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity

    SciTech Connect (OSTI)

    Obada, A.-S.F. [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt)] [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt); Hessian, H.A. [Faculty of Science, Assiut University, Assiut (Egypt)] [Faculty of Science, Assiut University, Assiut (Egypt); Mohamed, A.-B.A. [Faculty of Science, Assiut University, Assiut (Egypt) [Faculty of Science, Assiut University, Assiut (Egypt); Community College, Salman Bin Abdulaziz University, Al-Aflaj (Saudi Arabia); Homid, Ali H., E-mail: alihimad@yahoo.com [Faculty of Science, Al-Azhar University, Assiut (Egypt)

    2013-07-15T23:59:59.000Z

    A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: •A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. •Three- and two-qubit operations are generated via a classical field with the flux. •Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

  5. Experimental Estimation of Average Fidelity of a Clifford Gate on a 7-qubit Quantum Processor

    E-Print Network [OSTI]

    Dawei Lu; Hang Li; Denis-Alexandre Trottier; Jun Li; Aharon Brodutch; Anthony P. Krismanich; Ahmad Ghavami; Gary I. Dmitrienko; Guilu Long; Jonathan Baugh; Raymond Laflamme

    2014-11-28T23:59:59.000Z

    Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating the average fidelity of Clifford gates, to certify a 7-qubit entangling gate in a nuclear magnetic resonance quantum processor. Compared with more than $10^8$ experiments required by full process tomography, we conducted 1656 experiments to satisfy a statistical confidence level of 99%. The average fidelity of this Clifford gate in experiment is 55.1%, and rises to 87.5% if the infidelity due to decoherence is removed. The entire protocol of certifying Clifford gates is efficient and scalable, and can easily be extended to any general quantum information processor with minor modifications.

  6. Lithium, compression and high-pressure structure

    SciTech Connect (OSTI)

    Olinger, B.; Shaner, J.W.

    1983-03-04T23:59:59.000Z

    Lithium is found to transform from a body-centered cubic (bcc) to a face-centered cubic (fcc) structure at 6.9 gigapascals (69 kilobars) and 296 kelvin. The relative volume of the bcc structured lithium at 6.9 gigapascals is 0.718, and the fcc structure is 0.25 percent denser. The bulk modulus and its pressure derivative for the bcc structure are 11.57 gigapascals and 3.4, and for the fcc structure are 13.1 gigapascals and 2.8. Extrapolation of the bcc-fcc phase boundary and the melting curve indiactes a triple point around 15 gigapascals and 500 kelvin.

  7. Nitrogen at very high pressure

    SciTech Connect (OSTI)

    Nellis, W.J.

    1987-07-01T23:59:59.000Z

    High-pressure results for nitrogen are reviewed and discussed in terms of phenomena that occur at extreme conditions.

  8. Pressure Data Within BOP- ODS

    Broader source: Energy.gov [DOE]

    This file describes the components within the BOP and the pressure readings taken during diagnostic operations on May 25.

  9. Pressure Data Within BOP- XLS

    Broader source: Energy.gov [DOE]

    This file describes the components within the BOP and the pressure readings taken during diagnostic operations on May 25.

  10. Blood Pressure Medicine: Special Instructions

    E-Print Network [OSTI]

    Bandettini, Peter A.

    Blood Pressure Medicine: Special Instructions: U.S. DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health National Heart, Lung, and Blood Institute · What is my blood pressure reading in numbers? · What is my goal blood pressure? · Is there a healthy eating plan that I should follow to help

  11. Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    of single halo to the double gate structure results in threshold voltage roll-up, reduced DIBL, high drain the drain voltage variations. This work illustrates the benefits of high performance DG-SH SOI MOS devices gate pþ poly and back gate nþ poly) are becoming popular since this type of structure provides

  12. A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates

    E-Print Network [OSTI]

    Islam, Kazi Inamul

    1995-01-01T23:59:59.000Z

    This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition...

  13. High-pressure neutron diffraction

    SciTech Connect (OSTI)

    Xu, Hongwu [Los Alamos National Laboratory

    2011-01-10T23:59:59.000Z

    This lecture will cover progress and prospect of applications of high-pressure neutron diffraction techniques to Earth and materials sciences. I will first introduce general high-pressure research topics and available in-situ high-pressure techniques. Then I'll talk about high-pressure neutron diffraction techniques using two types of pressure cells: fluid-driven and anvil-type cells. Lastly, I will give several case studies using these techniques, particularly, those on hydrogen-bearing materials and magnetic transitions.

  14. Electrically-gated near-field radiative thermal transistor

    E-Print Network [OSTI]

    Yang, Yue

    2015-01-01T23:59:59.000Z

    In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene sheets function as the "gate" to modulate the near-field photon tunneling by tuning chemical potential with applied voltage biases symmetrically or asymmetrically. The radiative heat flux calculated from fluctuational electrodynamics significantly varies with graphene chemical potentials, which can tune the coupling between graphene plasmon across the vacuum gap. Thermal modulation, switching, and amplification, which are the key features required for a thermal transistor, are theoretically realized and analyzed. This work will pave the way to active thermal management, thermal circuits, and thermal computing.

  15. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

    1994-06-07T23:59:59.000Z

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  16. Optimal Control for Generating Quantum Gates in Open Dissipative Systems

    E-Print Network [OSTI]

    T. Schulte-Herbrueggen; A. Spoerl; N. Khaneja; S. J. Glaser

    2009-05-17T23:59:59.000Z

    Optimal control methods for implementing quantum modules with least amount of relaxative loss are devised to give best approximations to unitary gates under relaxation. The potential gain by optimal control using relaxation parameters against time-optimal control is explored and exemplified in numerical and in algebraic terms: it is the method of choice to govern quantum systems within subspaces of weak relaxation whenever the drift Hamiltonian would otherwise drive the system through fast decaying modes. In a standard model system generalising decoherence-free subspaces to more realistic scenarios, openGRAPE-derived controls realise a CNOT with fidelities beyond 95% instead of at most 15% for a standard Trotter expansion. As additional benefit it requires control fields orders of magnitude lower than the bang-bang decouplings in the latter.

  17. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07T23:59:59.000Z

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  18. After-gate attack on a quantum cryptosystem

    E-Print Network [OSTI]

    Carlos Wiechers; Lars Lydersen; Christoffer Wittmann; Dominique Elser; Johannes Skaar; Christoph Marquardt; Vadim Makarov; Gerd Leuchs

    2010-09-14T23:59:59.000Z

    We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack.

  19. Florida Nuclear Profile - Turkey Point

    U.S. Energy Information Administration (EIA) Indexed Site

    Turkey Point" "Unit","Summer capacity (mw)","Net generation (thousand mwh)","Summer capacity factor (percent)","Type","Commercial operation date","License expiration date"...

  20. Uniform Conversions of Operating Points and Characteristics of Compressor

    E-Print Network [OSTI]

    Ostromuhov, L A

    2011-01-01T23:59:59.000Z

    In the paper, some aspects of the polytropic analysis are developed that concerned with various processes changing the thermodynamic state of flow of a real fluid and reduction of these processes to processes having a given temperature and pressure of a given real mixture at the inlet. It is shown that all parameters of the process can be converted under condition of full similarity of flow that is formulated in the paper. An operating point of a compressor represents such process. It is to emphasize that parameters of the reduced point include not only volume flow, speed and polytropic head, for which requirement of similarity of flow at inlet is sufficient, but also polytropic exponent, polytropic efficiency, outlet pressure and outlet temperature.

  1. Pressure suppression containment system for boiling water reactor

    DOE Patents [OSTI]

    Gluntz, D.M.; Nesbitt, L.B.

    1997-01-21T23:59:59.000Z

    A system is disclosed for suppressing the pressure inside the containment of a BWR following a postulated accident. A piping subsystem is provided which features a main process pipe that communicates the wetwell airspace to a connection point downstream of the guard charcoal bed in an offgas system and upstream of the main bank of delay charcoal beds which give extensive holdup to offgases. The main process pipe is fitted with both inboard and outboard containment isolation valves. Also incorporated in the main process pipe is a low-differential-pressure rupture disk which prevents any gas outflow in this piping whatsoever until or unless rupture occurs by virtue of pressure inside this main process pipe on the wetwell airspace side of the disk exceeding the design opening (rupture) pressure differential. The charcoal holds up the radioactive species in the noncondensable gas from the wetwell plenum by adsorption, allowing time for radioactive decay before the gas is vented to the environs. 3 figs.

  2. Pressure suppression containment system for boiling water reactor

    DOE Patents [OSTI]

    Gluntz, Douglas M. (San Jose, CA); Nesbitt, Loyd B. (San Jose, CA)

    1997-01-01T23:59:59.000Z

    A system for suppressing the pressure inside the containment of a BWR following a postulated accident. A piping subsystem is provided which features a main process pipe that communicates the wetwell airspace to a connection point downstream of the guard charcoal bed in an offgas system and upstream of the main bank of delay charcoal beds which give extensive holdup to offgases. The main process pipe is fitted with both inboard and outboard containment isolation valves. Also incorporated in the main process pipe is a low-differential-pressure rupture disk which prevents any gas outflow in this piping whatsoever until or unless rupture occurs by virtue of pressure inside this main process pipe on the wetwell airspace side of the disk exceeding the design opening (rupture) pressure differential. The charcoal holds up the radioactive species in the noncondensable gas from the wetwell plenum by adsorption, allowing time for radioactive decay before the gas is vented to the environs.

  3. Theoretical collapse pressures for two pressurized torispherical heads

    SciTech Connect (OSTI)

    Kalnins, A.; Updike, D.P. [Lehigh Univ., Bethlehem, PA (United States); Rana, M.D. [Praxair, Inc., Tonawanda, NY (United States). Research and Development Dept.

    1995-12-01T23:59:59.000Z

    In order to determine the pressures at which real torispherical heads fail upon a single application of pressure, two heads were pressurized in recent Praxair tests, and displacements and strains were recorded at various locations. In this paper, theoretical results for the two test heads are presented in the form of curves of pressure versus crown deflections, using the available geometry and material parameters. From these curves, limit and collapse pressures are calculated, using procedures permitted by the ASME B and PV Code Section 8/Div.2. These pressures are shown to vary widely, depending on the method and model used to calculate them. The effect of no stress relief on the behavior of the Praxair test heads is also evaluated and found to be of no significance for neither the objectives of the tests nor the objectives of this paper. The results of this paper are submitted as an enhancement to the experimental results recorded during the Praxair tests.

  4. Cradle and pressure grippers

    DOE Patents [OSTI]

    Muniak, John E. (New York, NY)

    2001-01-01T23:59:59.000Z

    A gripper that is designed to incorporate the functions of gripping, supporting and pressure tongs into one device. The gripper has two opposing finger sections with interlocking fingers that incline and taper to form a wedge. The interlocking fingers are vertically off-set so that the opposing finger sections may close together allowing the inclined, tapered tips of the fingers to extend beyond the plane defined by the opposing finger section's engagement surface. The range of motion defined by the interlocking relationship of the finger sections allows the gripper to grab, lift and support objects of varying size and shape. The gripper has one stationary and one moveable finger section. Power is provided to the moveable finger section by an actuating device enabling the gripper to close around an object to be lifted. A lifting bail is attached to the gripper and is supported by a crane that provides vertical lift.

  5. Experimental implementation of the optimal linear-optical controlled phase gate

    E-Print Network [OSTI]

    Karel Lemr; Antonin Cernoch; Jan Soubusta; Konrad Kieling; Jens Eisert; Miloslav Dusek

    2010-07-27T23:59:59.000Z

    We report on the first experimental realization of optimal linear-optical controlled phase gates for arbitrary phases. The realized scheme is entirely flexible in that the phase shift can be tuned to any given value. All such controlled phase gates are optimal in the sense that they operate at the maximum possible success probabilities that are achievable within the framework of any postselected linear-optical implementation. The quantum gate is implemented using bulk optical elements and polarization encoding of qubit states. We have experimentally explored the remarkable observation that the optimum success probability is not monotone in the phase.

  6. Repeat-until-success cubic phase gate for universal continuous-variable quantum computation

    E-Print Network [OSTI]

    Kevin Marshall; Raphael Pooser; George Siopsis; Christian Weedbrook

    2014-12-01T23:59:59.000Z

    In order to achieve universal quantum computation using continuous variables, one needs to jump out of the set of Gaussian operations and have a non-Gaussian element, such as the cubic phase gate. However, such a gate is currently very difficult to implement in practice. Here we introduce an experimentally viable 'repeat-until-success' approach to generating the cubic phase gate, which is achieved using sequential photon subtractions and Gaussian operations. We find that our scheme offers benefits in terms of the expected time until success, although we require a primitive quantum memory.

  7. Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

    E-Print Network [OSTI]

    Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

    2011-04-22T23:59:59.000Z

    Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

  8. High Pressure Hydrogen Materials Compatibility of Piezoelectric...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Pressure Hydrogen Materials Compatibility of Piezoelectric Films. High Pressure Hydrogen Materials Compatibility of Piezoelectric Films. Abstract: Abstract: Hydrogen is being...

  9. To estimate vapor pressure easily

    SciTech Connect (OSTI)

    Yaws, C.L.; Yang, H.C. (Lamar Univ., Beaumont, TX (USA))

    1989-10-01T23:59:59.000Z

    Vapor pressures as functions of temperature for approximately 700 major organic chemical compounds are given. The tabulation also gives the temperature range for which the data are applicable. Minimum and maximum temperatures are denoted by TMIN and TMAX. The Antoine equation that correlates vapor pressure as a function of temperature is described. A representative comparison of calculated and actual data values for vapor pressure is shown for ethyl alcohol. The coefficient tabulation is based on both literature (experimental data) and estimated values.

  10. Pressure testing of torispherical heads

    SciTech Connect (OSTI)

    Rana, M.D. [Praxair, Inc., Tonawanda, NY (United States). Research and Development Dept.; Kalnins, A.; Updike, D.P. [Lehigh Univ., Bethlehem, PA (United States)

    1995-12-01T23:59:59.000Z

    Two vessels fabricated from SA516-70 steel with 6% knuckle radius torispherical heads were tested under internal pressure to failure. The D/t ratios of Vessel 1 and Vessel 2 were 238 and 185 respectively. The calculated maximum allowable working pressures of Vessel 1 and 2 heads using the ASME Section 8, Div. 1 rules and measured dimensions were 85 and 110 psi, respectively. Vessel 1 failed at a nozzle weld in the cylindrical shell at 700 psi pressure. Neither buckling nor any other objectionable deformation of the head was observed at a theoretical double-elastic-slope collapse pressure of 241 and a calculated buckling pressure of 270 psi. Buckles were observed developing slowly after 600 psi pressure, and a total of 22 buckles were observed after the test, having the maximum amplitude of 0.15 inch. Vessel 2 failed at the edge of the longitudinal weld of the cylindrical shell at 1,080 psi pressure. Neither buckling nor any other objectionable deformation of the head was observed up to the final pressure, which exceeded the theoretical double-elastic-slope collapse and calculated buckling pressures of 274 psi and 342 psi, respectively.

  11. Integrated Quantum Controlled-NOT Gate Based on Dielectric-Loaded Surface Plasmon Polariton Waveguide

    E-Print Network [OSTI]

    S. M. Wang; Q. Q. Cheng; Y. X. Gong; P. Xu; L. Li; T. Li; S. N. Zhu

    2014-08-09T23:59:59.000Z

    It has been proved that surface plasmon polariton (SPP) can well conserve and transmit the quantum nature of entangled photons. Therefore, further utilization and manipulation of such quantum nature of SPP in a plasmonic chip will be the next task for scientists in this field. In quantum logic circuits, the controlled-NOT (CNOT) gate is the key building block. Here, we implement the first plasmonic quantum CNOT gate with several-micrometer footprint by utilizing a single polarization-dependent beam-splitter (PDBS) fabricated on the dielectric-loaded SPP waveguide (DLSPPW). The quantum logic function of the CNOT gate is characterized by the truth table with an average fidelity of. Its entangling ability to transform a separable state into an entangled state is demonstrated with the visibilities of and for non-orthogonal bases. The DLSPPW based CNOT gate is considered to have good integratability and scalability, which will pave a new way for quantum information science.

  12. Organic Nanodielectrics for Low Voltage Carbon Nanotube Thin Film Transistors and Complementary Logic Gates

    E-Print Network [OSTI]

    Rogers, John A.

    illustrates the device layout which includes patterned metal source and drain electrodes, a random SWNT serving as substrate and back gate. The SAS nanodielectric multilayer was deposited via solution methods- lithographic patterning of source and drain electrodes

  13. The robustness of magic state distillation against errors in Clifford gates

    E-Print Network [OSTI]

    Jochym-O'Connor, Tomas; Helou, Bassam; Laflamme, Raymond

    2012-01-01T23:59:59.000Z

    Quantum error correction and fault-tolerance have provided the possibility for large scale quantum computations without a detrimental loss of quantum information. A very natural class of gates for fault-tolerant quantum computation is the Clifford gate set and as such their usefulness for universal quantum computation is of great interest. Clifford group gates augmented by magic state preparation give the possibility of simulating universal quantum computation. However, experimentally one cannot expect to perfectly prepare magic states. Nonetheless, it has been shown that by repeatedly applying operations from the Clifford group and measurements in the Pauli basis, the fidelity of noisy prepared magic states can be increased arbitrarily close to a pure magic state [1]. We investigate the robustness of magic state distillation to perturbations of the initial states to arbitrary locations in the Bloch sphere due to noise. Additionally, we consider a depolarizing noise model on the quantum gates in the decoding ...

  14. Electrolyte-gated graphene field-effect transistors : modeling and applications

    E-Print Network [OSTI]

    Mackin, Charles Edward

    2015-01-01T23:59:59.000Z

    This work presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated ...

  15. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology 

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25T23:59:59.000Z

    A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The ...

  16. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  17. Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by The Ohio State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy...

  18. pH sensing properties of graphene solution-gated field-effect transistors

    E-Print Network [OSTI]

    Mailly-Giacchetti, Benjamin

    2013-01-01T23:59:59.000Z

    The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene ...

  19. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE center of excellence...

  20. All-Optical Switch and Transistor Gated by One Stored Photon

    E-Print Network [OSTI]

    Chen, Wenlan

    The realization of an all-optical transistor, in which one “gate” photon controls a “source” light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical ...

  1. A linear programming solution to the gate assignment problem at airport terminals

    E-Print Network [OSTI]

    Mangoubi, Rami

    1980-01-01T23:59:59.000Z

    This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

  2. Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  3. Lessons learned in the design and erection of box girder bridges from the West Gate collapse

    E-Print Network [OSTI]

    Burton, Alia Christine

    2007-01-01T23:59:59.000Z

    The West Gate Bridge, intended to span the Yarra River in Australia, collapsed during its third year of construction in 1970. Investigation into the project revealed numerous issues in the bridge's design and construction. ...

  4. Energy-aware architectures, circuits and CAD for field programmable gate arrays

    E-Print Network [OSTI]

    Honoré, Francis

    2006-01-01T23:59:59.000Z

    Field Programmable Gate Arrays (FPGAs) are a class of hardware reconfigurable logic devices based on look-up tables (LUTs) and programmable interconnect that have found broad acceptance for a wide range of applications. ...

  5. The civic forum in ancient Israel : the form, function, and symbolism of city gates

    E-Print Network [OSTI]

    Frese, Daniel Allan

    2012-01-01T23:59:59.000Z

    of City Gates by Daniel Allan Frese Doctor of Philosophy inC. Michael Hall, and Allan M. Williams. Oxford: Blackwell,in History by Daniel Allan Frese Committee in Charge:

  6. Penn State DOE GATE Center of Exellence for In-Vehicle, High...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GATE CENTER OF EXCELLENCE FOR IN-VEHICLE, HIGH-POWER ENERGY STORAGE SYSTEMS DOE Merit Review, February 28, 2008 Joel Anstrom, Director "This presentation does not...

  7. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  8. Transient Turbulent Flow Simulation with Water Model Validation and Application to Slide Gate Dithering

    E-Print Network [OSTI]

    Thomas, Brian G.

    ) 244-6534 Email: bgthomas@illinois.edu Bruce Forman and Hongbin Yin ArcelorMittal Global R&D East) 399-3899 Email: bruce.forman@arcelormittal.com, Hongbin.Yin@arcelormittal.com ABSTRACT Slide gate

  9. X-ray lithographic alignment and overlay applied to double-gate MOSFET fabrication

    E-Print Network [OSTI]

    Meinhold, Mitchell W., 1972-

    2003-01-01T23:59:59.000Z

    Double-gate MOSFETs represent a significant solution to transistor scaling problems and promise a dramatic improvement in both performance and power consumption. In this work, a planar lithographic process is presented ...

  10. Points

    Broader source: Energy.gov (indexed) [DOE]

    2,540,631 East Lansing, MI Vehicle Technologies The wave disc engine, a gas-fueled electric generator that is five times more efficient than traditional engines for...

  11. Scheme for a linear-optical controlled-phase gate with programmable phase shift

    E-Print Network [OSTI]

    Karel Lemr; Karol Bartkiewicz; Antonín ?ernoch

    2015-03-20T23:59:59.000Z

    We propose a linear-optical scheme for a controlled-phase gate with tunable phase shift set by a program qubit. Analysis of the scheme is provided with considerations for experimental feasibility. We also discuss options for increasing the success probability up to 1/12 which is close the the optimal success probability of a non-programmable tunable controlled-phase gate.

  12. Photon-photon gate via the interaction between two collective Rydberg excitations

    E-Print Network [OSTI]

    Mohammadsadegh Khazali; Khabat Heshami; Christoph Simon

    2014-07-28T23:59:59.000Z

    We propose a scheme for a deterministic controlled-phase gate between two photons based on the strong interaction between two stationary collective Rydberg excitations in an atomic ensemble. The distance-dependent character of the interaction causes both a momentum displacement of the collective excitations and unwanted entanglement between them. We show that these effects can be overcome by swapping the collective excitations in space and by optimizing the geometry, resulting in a photon-photon gate with high fidelity and efficiency.

  13. Surface mobility near threshold and other parameters of insulated gate field effect transistors

    E-Print Network [OSTI]

    Gnadinger, Alfred P.

    1970-01-01T23:59:59.000Z

    SURFACE MOBILITY NEAR THRESHOLD AND OTHER PARAMETERS OF INSULATED GATE FIELD EFFECT TRANSISTORS BY Alfred P. Gnadinger Dipl. El. Ing. ETH Swiss Federal Institute of Technology, Zurich, 1965 M.S.E.E, University of Kansas, Lawrence, 1968... Committee: May, 1970 RD0107 4S0S0 TO MY WIFE AND OUR PARENTS i ABSTRACT The mobility of the mobile carriers in the inversion layer of an Insulated Gate Field Effect Transistor (IGFET) has been investigated with particular...

  14. Rooted-tree network for optimal non-local gate implementation

    E-Print Network [OSTI]

    Nilesh Vyas; Debashis Saha; Prasanta K. Panigrahi

    2015-06-28T23:59:59.000Z

    A general quantum network for implementing non-local control-unitary gates, between remote parties at minimal entanglement cost, is shown to be a rooted-tree structure. Starting from a five party scenario, we demonstrate the local implementation of simultaneous control-Hermitian and multiparty control-unitary gates in an arbitrary n-party network. Previously established networks are shown to be special cases of this general construct.

  15. Fault-tolerant logical gates in quantum error-correcting codes

    E-Print Network [OSTI]

    Fernando Pastawski; Beni Yoshida

    2014-08-07T23:59:59.000Z

    Recently, Bravyi and K\\"onig have shown that there is a tradeoff between fault-tolerantly implementable logical gates and geometric locality of stabilizer codes. They consider locality-preserving operations which are implemented by a constant depth geometrically local circuit and are thus fault-tolerant by construction. In particular, they shown that, for local stabilizer codes in D spatial dimensions, locality preserving gates are restricted to a set of unitary gates known as the D-th level of the Clifford hierarchy. In this paper, we elaborate this idea and provide several extensions and applications of their characterization in various directions. First, we present a new no-go theorem for self-correcting quantum memory. Namely, we prove that a three-dimensional stabilizer Hamiltonian with a locality-preserving implementation of a non-Clifford gate cannot have a macroscopic energy barrier. Second, we prove that the code distance of a D-dimensional local stabilizer code with non-trivial locality-preserving m-th level Clifford logical gate is upper bounded by $O(L^{D+1-m})$. For codes with non-Clifford gates (m>2), this improves the previous best bound by Bravyi and Terhal. Third we prove that a qubit loss threshold of codes with non-trivial transversal m-th level Clifford logical gate is upper bounded by 1/m. As such, no family of fault-tolerant codes with transversal gates in increasing level of the Clifford hierarchy may exist. This result applies to arbitrary stabilizer and subsystem codes, and is not restricted to geometrically-local codes. Fourth we extend the result of Bravyi and K\\"onig to subsystem codes. A technical difficulty is that, unlike stabilizer codes, the so-called union lemma does not apply to subsystem codes. This problem is avoided by assuming the presence of error threshold in a subsystem code, and the same conclusion as Bravyi-K\\"onig is recovered.

  16. A Critical Point for Science?

    E-Print Network [OSTI]

    Josephson, B D

    2008-03-05T23:59:59.000Z

    , taboo ideas become arespectable part of science? Occult Sciences Tripos? CU Institute of Astrology? Telepathy, ‘memory of water’, ‘cold fusion’?Scientific theology, intelligent design? Mar. 5, 2008/CUPS A Critical Point for Science / Brian Josephson 32...

  17. Fiberoptic Fabry-Perot engine pressure sensor system using a continuous wave laser source 

    E-Print Network [OSTI]

    Choi, Han-Sun

    1994-01-01T23:59:59.000Z

    A fiber optic Fabry-Perot engine pressure sensor using a continuous wave laser source is implemented and tested. The operating point of the Fabrv-Perot sensor is locked to the quadrature point by electronic feedback control of laser temperature...

  18. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    None

    2011-07-31T23:59:59.000Z

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  19. Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry

    E-Print Network [OSTI]

    Colin J. Trout; Kenneth R. Brown

    2015-01-29T23:59:59.000Z

    Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

  20. Electrokinetically pumped high pressure sprays

    DOE Patents [OSTI]

    Schoeniger, Joseph S. (Oakland, CA); Paul, Phillip H. (Livermore, CA); Schoeniger, Luke (Pittsford, NY)

    2002-01-01T23:59:59.000Z

    An electrokinetic pump capable of producing high pressure is combined with a nozzle having a submicron orifice to provide a high pressure spray device. Because of its small size, the device can be contained within medical devices such as an endoscope for delivering biological materials such as DNA, chemo therapeutic agents, or vaccines to tissues and cells.

  1. Possible Pressure Effect for Superconductors

    E-Print Network [OSTI]

    A. Kwang-Hua Chu

    2005-08-30T23:59:59.000Z

    We make an estimate of the possible range of $\\Delta T_c$ induced by high-pressure effects in post-metallic superconductors by using the theory of {\\it extended irreversible/reversible thermodynamics} and Pippard's length scale. The relationship between the increment of the superconducting temperature and the increase of the pressure is parabolic.

  2. Balanced pressure gerotor fuel pump

    DOE Patents [OSTI]

    Raney, Michael Raymond; Maier, Eugen

    2004-08-03T23:59:59.000Z

    A gerotor pump for pressurizing gasoline fuel is capable of developing pressures up to 2.0 MPa with good mechanical and volumetric efficiency and satisfying the durability requirements for an automotive fuel pump. The pump has been designed with optimized clearances and by including features that promote the formation of lubricating films of pressurized fuel. Features of the improved pump include the use of a shadow port in the side plate opposite the outlet port to promote balancing of high fuel pressures on the opposite sides of the rotors. Inner and outer rotors have predetermined side clearances with the clearances of the outer rotor being greater than those of the inner rotor in order to promote fuel pressure balance on the sides of the outer rotor. Support of the inner rotor and a drive shaft on a single bushing with bearing sleeves maintains concentricity. Additional features are disclosed.

  3. PRESSURIZED SOLID OXIDE FUEL CELL/GAS TURBINE POWER SYSTEM

    SciTech Connect (OSTI)

    W.L. Lundberg; G.A. Israelson; R.R. Moritz (Rolls-Royce Allison); S.E. Veyo; R.A. Holmes; P.R. Zafred; J.E. King; R.E. Kothmann (Consultant)

    2000-02-01T23:59:59.000Z

    Power systems based on the simplest direct integration of a pressurized solid oxide fuel cell (SOFC) generator and a gas turbine (GT) are capable of converting natural gas fuel energy to electric power with efficiencies of approximately 60% (net AC/LHV), and more complex SOFC and gas turbine arrangements can be devised for achieving even higher efficiencies. The results of a project are discussed that focused on the development of a conceptual design for a pressurized SOFC/GT power system that was intended to generate 20 MWe with at least 70% efficiency. The power system operates baseloaded in a distributed-generation application. To achieve high efficiency, the system integrates an intercooled, recuperated, reheated gas turbine with two SOFC generator stages--one operating at high pressure, and generating power, as well as providing all heat needed by the high-pressure turbine, while the second SOFC generator operates at a lower pressure, generates power, and provides all heat for the low-pressure reheat turbine. The system cycle is described, major system components are sized, the system installed-cost is estimated, and the physical arrangement of system components is discussed. Estimates of system power output, efficiency, and emissions at the design point are also presented, and the system cost of electricity estimate is developed.

  4. Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

    SciTech Connect (OSTI)

    Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2014-01-13T23:59:59.000Z

    Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5?×?10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

  5. Low energy high pressure miniature screw valve

    DOE Patents [OSTI]

    Fischer, Gary J. (Sandia Park, NM); Spletzer, Barry L. (Albuquerque, NM)

    2006-12-12T23:59:59.000Z

    A low energy high pressure screw valve having a valve body having an upper portion and a lower portion, said lower portion of said valve body defining an inlet flow passage and an outlet flow passage traversing said valve body to a valve seat, said upper portion of said valve body defining a cavity at said valve seat, a diaphragm restricting flow between said upper portion of said valve body and said lower portion, said diaphragm capable of engaging said valve seat to restrict fluid communication between said inlet passage and said outlet passage, a plunger within said cavity supporting said diaphragm, said plunger being capable of engaging said diaphragm with said valve seat at said inlet and outlet fluid passages, said plunger being in point contact with a drive screw having threads engaged with opposing threads within said upper portion of said valve body such engagement allowing motion of said drive screw within said valve body.

  6. Visual servoing using statistical pressure snakes.

    SciTech Connect (OSTI)

    Schaub, Hanspeter (ORION International Technologies, Albuquerque, NM)

    2004-05-01T23:59:59.000Z

    A nonlinear visual servoing steering law is presented which is used to align a camera view with a visual target. A full color version of statistical pressure snakes is used to identify and track the target with a series of video frames. The nonlinear steering law provides camera-frame centric speed commands to a velocity based servo sub-system. To avoid saturating the subsystem, the commanded speeds are smoothly limited to remain within a finite range. Analytical error analysis is also provided illustrating how the two control gains contribute to the stiffness of the control. The algorithm is demonstrated on a pan and tilt camera system. The control law is able to smoothly realign the camera to point at the target.

  7. Pressure sensor for sealed containers

    DOE Patents [OSTI]

    Hodges, Franklin R. (Loudon, TN)

    2001-01-01T23:59:59.000Z

    A magnetic pressure sensor for sensing a pressure change inside a sealed container. The sensor includes a sealed deformable vessel having a first end attachable to an interior surface of the sealed container, and a second end. A magnet mounted to the vessel second end defining a distance away from the container surface provides an externally detectable magnetic field. A pressure change inside the sealed container causes deformation of the vessel changing the distance of the magnet away from the container surface, and thus the detectable intensity of the magnetic field.

  8. Electrokinetic high pressure hydraulic system

    DOE Patents [OSTI]

    Paul, Phillip H. (Livermore, CA); Rakestraw, David J. (Fremont, CA)

    2000-01-01T23:59:59.000Z

    A compact high pressure hydraulic pump having no moving mechanical parts for converting electric potential to hydraulic force. The electrokinetic pump, which can generate hydraulic pressures greater than 2500 psi, can be employed to compress a fluid, either liquid or gas, and manipulate fluid flow. The pump is particularly useful for capillary-base systems. By combining the electrokinetic pump with a housing having chambers separated by a flexible member, fluid flow, including high pressure fluids, is controlled by the application of an electric potential, that can vary with time.

  9. Low Pressure Hugoniot for U-Nb (6 wt.%)

    SciTech Connect (OSTI)

    Koller, D. D.; Rigg, P. A.; Gray, G. T. III; Jensen, B. J.; Hayes, D. B.; Maestas, J. D. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2006-07-28T23:59:59.000Z

    Over the last several years, many experiments have been conducted to study the dynamic response of U-Nb (6 wt.%) alloy. An understanding of the physical mechanisms governing the behavior of this material is necessary to develop robust physical models for today's hydrocodes. Previous experiments indicate that the dynamic response of this alloy is strongly dependant on the initial microstructure of the material. Using a well characterized material, a series of low pressure shock experiments were conducted at the single stage light gas gun facility at Los Alamos National Laboratory. Time resolved particle velocity measurements were made using VISAR. Absolute VISAR system timing was measured and cross correlated to shock breakout time to allow hugoniot points to be calculated. These shots provide both low pressure Hugoniot points for U-Nb (6 wt.%) alloy and a better constraint on the dynamic material response.

  10. Exact solutions for a universal set of quantum gates on a family of iso-spectral spin chains

    E-Print Network [OSTI]

    V. Karimipour; N. Majd

    2005-09-25T23:59:59.000Z

    We find exact solutions for a universal set of quantum gates on a scalable candidate for quantum computers, namely an array of two level systems. The gates are constructed by a combination of dynamical and geometrical (non-Abelian) phases. Previously these gates have been constructed mostly on non-scalable systems and by numerical searches among the loops in the manifold of control parameters of the Hamiltonian.

  11. Radiation effects on reactor pressure vessel supports

    SciTech Connect (OSTI)

    Johnson, R.E. [Nuclear Regulatory Commission, Washington, DC (United States). Div. of Engineering Technology; Lipinski, R.E. [Idaho National Engineering Lab., Rockville, MD (United States)

    1996-05-01T23:59:59.000Z

    The purpose of this report is to present the findings from the work done in accordance with the Task Action Plan developed to resolve the Nuclear Regulatory Commission (NRC) Generic Safety Issue No. 15, (GSI-15). GSI-15 was established to evaluate the potential for low-temperature, low-flux-level neutron irradiation to embrittle reactor pressure vessel (RPV) supports to the point of compromising plant safety. An evaluation of surveillance samples from the High Flux Isotope Reactor (HFIR) at the Oak Ridge National Laboratory (ORNL) had suggested that some materials used for RPV supports in pressurized-water reactors could exhibit higher than expected embrittlement rates. However, further tests designed to evaluate the applicability of the HFIR data to reactor RPV supports under operating conditions led to the conclusion that RPV supports could be evaluated using traditional method. It was found that the unique HFIR radiation environment allowed the gamma radiation to contribute significantly to the embrittlement. The shielding provided by the thick steel RPV shell ensures that degradation of RPV supports from gamma irradiation is improbable or minimal. The findings reported herein were used, in part, as the basis for technical resolution of the issue.

  12. Realization and Properties of Biochemical-Computing Biocatalytic XOR Gate Based on Enzyme Inhibition by a Substrate

    E-Print Network [OSTI]

    Jan Halamek; Vera Bocharova; Mary A. Arugula; Guinevere Strack; Vladimir Privman; Evgeny Katz

    2011-05-25T23:59:59.000Z

    We consider a realization of the XOR logic gate in a process biocatalyzed by an enzyme (here horseradish peroxidase: HRP), the function of which can be inhibited by a substrate (hydrogen peroxide for HRP), when the latter is inputted at large enough concentrations. A model is developed for describing such systems in an approach suitable for evaluation of the analog noise amplification properties of the gate. The obtained data are fitted for gate quality evaluation within the developed model, and we discuss aspects of devising XOR gates for functioning in "biocomputing" systems utilizing biomolecules for information processing.

  13. OVERBURDEN PRESSURE AFFECTS FRACTURE APERTURE

    E-Print Network [OSTI]

    Schechter, David S.

    OVERBURDEN PRESSURE AFFECTS FRACTURE APERTURE AND FRACTURE PERMEABILITY IN A FRACTURED RESERVOIR are in integrated reservoir study, reservoir charac- terization, naturally fractured reservoirs, waterflooding in Hydraulically and Naturally Fractured Reservoirs." His research areas include experimental analysis

  14. Electrokinetic high pressure hydraulic system

    DOE Patents [OSTI]

    Paul, Phillip H.; Rakestraw, David J.; Arnold, Don W.; Hencken, Kenneth R.; Schoeniger, Joseph S.; Neyer, David W.

    2003-06-03T23:59:59.000Z

    An electrokinetic high pressure hydraulic pump for manipulating fluids in capillary-based system. The pump uses electro-osmotic flow to provide a high pressure hydraulic system, having no moving mechanical parts, for pumping and/or compressing fluids, for providing valve means and means for opening and closing valves, for controlling fluid flow rate, and manipulating fluid flow generally and in capillary-based systems (microsystems), in particular. The compact nature of the inventive high pressure hydraulic pump provides the ability to construct a micro-scale or capillary-based HPLC system that fulfills the desire for small sample quantity, low solvent consumption, improved efficiency, the ability to run samples in parallel, and field portability. Control of pressure and solvent flow rate is achieved by controlling the voltage applied to an electrokinetic pump.

  15. Electrokinetic high pressure hydraulic system

    DOE Patents [OSTI]

    Paul, Phillip H. (Livermore, CA); Rakestraw, David J. (Fremont, CA); Arnold, Don W. (Livermore, CA); Hencken, Kenneth R. (Pleasanton, CA); Schoeniger, Joseph S. (Oakland, CA); Neyer, David W. (Castro Valley, CA)

    2001-01-01T23:59:59.000Z

    An electrokinetic high pressure hydraulic pump for manipulating fluids in capillary-based systems. The pump uses electro-osmotic flow to provide a high pressure hydraulic system, having no moving mechanical parts, for pumping and/or compressing fluids, for providing valve means and means for opening and closing valves, for controlling fluid flow rate, and manipulating fluid flow generally and in capillary-based systems (Microsystems), in particular. The compact nature of the inventive high pressure hydraulic pump provides the ability to construct a micro-scale or capillary-based HPLC system that fulfills the desire for small sample quantity, low solvent consumption, improved efficiency, the ability to run samples in parallel, and field portability. Control of pressure and solvent flow rate is achieved by controlling the voltage applied to an electrokinetic pump.

  16. CenterPoint November 2009

    E-Print Network [OSTI]

    Hemmers, Oliver

    CenterPoint November 2009 The Center for Academic Enrichment & Outreach Newsletter ONLINE ARTICLES (which is housed in the Center for Academic Enrichment and Outreach (CAEO)) assisted parents is committed to working with families and students to provide challenging academic classes, as well as social

  17. End points for facility deactivation

    SciTech Connect (OSTI)

    Szilagyi, A.P. [Dept. of Energy, Germantown, MD (United States); Negin, C.A. [Oak Technologies, Washington Grove, MD (United States); Stefanski, L.D. [Westinghouse Hanford, Richland, WA (United States)

    1996-12-31T23:59:59.000Z

    DOE`s Office of Nuclear Material and Facility Stabilization mission includes deactivating surplus nuclear facilities. Each deactivation project requires a systematic and explicit specification of the conditions to be established. End Point methods for doing so have been field developed and implemented. These methods have worked well and are being made available throughout the DOE establishment.

  18. Analysis of the behavior of 5 axially loaded single piles in sand at Hunter's Point 

    E-Print Network [OSTI]

    Kon, Chee Min

    1989-01-01T23:59:59.000Z

    67 72 TABLE OF CONTENTS (Continued) Page 5. 3. 3 Friction versus movement curves 77 5. 3. 4 Unit point pressure versus point movement 79 5. 3. 5 Average side friction versus pile movement 84 5. 3. 6 Ultimate side friction versus depth . . 84... 5. 3. 7 Toe pressure cell response 88 5. 4 Residual loads for uplift test 91 5. 5, Uplift test 5. 5. 1 Load versus settlement curve 5. 5. 2 Load versus depth 5. 5. 3 Friction versus movement curves 95 95 5. 5. 4 Average side friction versus...

  19. Spray bottle apparatus with pressure multiplying pistons

    DOE Patents [OSTI]

    Moss, Owen R. (Kennewick, WA); Gordon, Norman R. (Kennewick, WA); DeFord, Henry S. (Kennewick, WA)

    1990-01-01T23:59:59.000Z

    The present invention comprises a spray bottle in which the pressure resulting from the gripping force applied by the user is amplified and this increased pressure used in generating a spray such as an aerosol or fluid stream. In its preferred embodiment, the invention includes a high pressure chamber and a corresponding piston which is operative for driving fluid out of this chamber at high pressure through a spray nozzle and a low pressure chamber and a corresponding piston which is acted upon the hydraulic pressure within the bottle resulting from the gripping force. The low pressure chamber and piston are of larger size than the high pressure chamber and piston. The pistons are rigidly connected so that the force created by the pressure acting on the piston in the low pressure chamber is transmitted to the piston in the high pressure chamber where it is applied over a more limited area thereby generating greater hydraulic pressure for use in forming the spray.

  20. Compact, Intelligent, Digitally Controlled IGBT Gate Drivers for a PEBB-Based ILC Marx Modulator

    SciTech Connect (OSTI)

    Nguyen, M.N.; Burkhart, C.; Olsen, J.J.; Macken, K.; /SLAC; ,

    2010-06-07T23:59:59.000Z

    SLAC National Accelerator Laboratory has built and is currently operating a first generation prototype Marx klystron modulator to meet ILC specifications. Under development is a second generation prototype, aimed at improving overall performance, serviceability, and manufacturability as compared to its predecessor. It is designed around 32 cells, each operating at 3.75 kV and correcting for its own capacitor droop. Due to the uniqueness of this application, high voltage gate drivers needed to be developed for the main 6.5 kV and droop correction 1.7 kV IGBTs. The gate driver provides vital functions such as protection of the IGBT from over-voltage and over-current, detection of gate-emitter open and short circuit conditions, and monitoring of IGBT degradation (based on collector-emitter saturation voltage). Gate drive control, diagnostic processing capabilities, and communication are digitally implemented using an FPGA. This paper details the design of the gate driver circuitry, component selection, and construction layout. In addition, experimental results are included to illustrate the effectiveness of the protection circuit.

  1. The prediction of formation volume factors of hydrocarbons at bubble point and flash separator pressures

    E-Print Network [OSTI]

    Crownover, Allen Norris

    1962-01-01T23:59:59.000Z

    & 300 10 12 SUBROUTINE VOL(BXeV) DI MENS I QN BX (20 ) DIMENSION XMLFR (8) e XK (7) e XN(7 ) ~ XM(7)? C(7) DO 300 I ~ I e8' XMLFR( I ) m BX( I ) CONTINUE TEMP et BX(11) PRES ~ BX(12& XMC7P = BX(10) DC7P e: BX(9) SUMeeOe0 DQ 10 I ~1 ~ 8... AMseAMtXK&I)ssEXPF(XN(I)/TEMP)ssXMLFR&I) CONT INUE IF(XMLFR(8)) 435s435s430 AM&AMtEXPF(3e8405985&s0 ~ 00)ssXMC7P 9e5638281ss0 ~ 0001&sXMCTP/DCTP+2 ~ 618 108ISSS100 ~ /TEMPt7e3404464&SO ~ 000001&SXMC7PSSXMCTPt10 ~ 753517)SSXMLFR(8) 435 CONTINUE BM...

  2. Flexible Pressure Sensors: Modeling and Experimental Characterization

    E-Print Network [OSTI]

    Viana, J.C.

    Flexible capacitive pressure sensors fabricated with nanocomposites were experimentally characterized and results compared with simulations from analytical modeling. Unlike traditional diaphragm silicon pressure sensors, ...

  3. Documentation Requirements for Pressurized Experiment Equipment

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Documentation Requirements for Pressurized Experiment Apparatus PSSC NOTE01 15-Jan-2013 When bringing a piece of apparatus to the APS for an experiment that will involve pressure,...

  4. Femtosecond photoelectron point projection microscope

    SciTech Connect (OSTI)

    Quinonez, Erik; Handali, Jonathan; Barwick, Brett [Department of Physics, Trinity College, 300 Summit St., Hartford, Connecticut 06106 (United States)] [Department of Physics, Trinity College, 300 Summit St., Hartford, Connecticut 06106 (United States)

    2013-10-15T23:59:59.000Z

    By utilizing a nanometer ultrafast electron source in a point projection microscope we demonstrate that images of nanoparticles with spatial resolutions of the order of 100 nanometers can be obtained. The duration of the emission process of the photoemitted electrons used to make images is shown to be of the order of 100 fs using an autocorrelation technique. The compact geometry of this photoelectron point projection microscope does not preclude its use as a simple ultrafast electron microscope, and we use simple analytic models to estimate temporal resolutions that can be expected when using it as a pump-probe ultrafast electron microscope. These models show a significant increase in temporal resolution when comparing to ultrafast electron microscopes based on conventional designs. We also model the microscopes spectroscopic abilities to capture ultrafast phenomena such as the photon induced near field effect.

  5. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D. (Golden, CO)

    1998-04-14T23:59:59.000Z

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  6. Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels

    E-Print Network [OSTI]

    Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

    2009-02-16T23:59:59.000Z

    The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

  7. Optimization of Pressurized Oxy4Combustion with Flameless Reactor

    SciTech Connect (OSTI)

    Malavasi, Massimo; Landegger, Gregory

    2014-06-30T23:59:59.000Z

    Pressurized OxyECombustion is one of the most promising technologies for utilityEscale power generation plants. Benefits include the ability to burn low rank coal and capture C02. By increasing the flue gas pressure during this process, greater efficiencies are derived from increased quantity and quality of thermal energy recovery. UPA with modeling support from MIT and testing and data verification by Georgia Tech’s Research Center designed and built a 100kW system capable of demonstrating pressurized oxyEcombustion using a flameless combustor. Wyoming PRB coal was run at 15 and 32 bar. Additional tests were not completed but sampled data demonstrated the viability of the technology over a broader range of operating pressures, Modeling results illustrated a flat efficiency curve over 20 bar, with optimum efficiency achieved at 29 bar. This resulted in a 33% (HHV) efficiency, a 5 points increase in efficiency versus atmospheric oxyEcombustion, and a competitive cost of electricity plus greater C02 avoidance costs then prior study’s presented. UPA’s operation of the benchEscale system provided evidence that key performance targets were achieved: flue gas sampled at the combustor outlet had nonE detectable residual fly ashes, and low levels of SO3 and heavyEmetal. These results correspond to prior pressurized oxyEcombustion testing completed by IteaEEnel.

  8. Field's Point Wastewater Treatment Facility (Narragansett Bay...

    Open Energy Info (EERE)

    Field's Point Wastewater Treatment Facility (Narragansett Bay Commission) Jump to: navigation, search Name Field's Point Wastewater Treatment Facility (Narragansett Bay Commission)...

  9. Starting Points | National Nuclear Security Administration

    National Nuclear Security Administration (NNSA)

    (M&O) Contract Competition Starting Points Starting Points Kansas City Plant Related Web Pages Summary Kansas City Plant Home Page Kansas City Plant Contracts DOE Directives...

  10. Video Lessons, PowerPoints, and Outlines

    E-Print Network [OSTI]

    POWERPOINT PRESENTATIONS, VIDEO LESSONS AND OUTLINES ... 6/11. Lesson 1 PowerPoint (Part A) · Lesson 1 PowerPoint (Part B) · Lesson 1 Video.

  11. High temperature pressurized high frequency testing rig and test method

    DOE Patents [OSTI]

    De La Cruz, Jose; Lacey, Paul

    2003-04-15T23:59:59.000Z

    An apparatus is described which permits the lubricity of fuel compositions at or near temperatures and pressures experienced by compression ignition fuel injector components during operation in a running engine. The apparatus consists of means to apply a measured force between two surfaces and oscillate them at high frequency while wetted with a sample of the fuel composition heated to an operator selected temperature. Provision is made to permit operation at or near the flash point of the fuel compositions. Additionally a method of using the subject apparatus to simulate ASTM Testing Method D6079 is disclosed, said method involving using the disclosed apparatus to contact the faces of prepared workpieces under a measured load, sealing the workface contact point into the disclosed apparatus while immersing said contact point between said workfaces in a lubricating media to be tested, pressurizing and heating the chamber and thereby the fluid and workfaces therewithin, using the disclosed apparatus to impart a differential linear motion between the workpieces at their contact point until a measurable scar is imparted to at least one workpiece workface, and then evaluating the workface scar.

  12. High pressure neon arc lamp

    DOE Patents [OSTI]

    Sze, Robert C.; Bigio, Irving J.

    2003-07-15T23:59:59.000Z

    A high pressure neon arc lamp and method of using the same for photodynamic therapies is provided. The high pressure neon arc lamp includes a housing that encloses a quantity of neon gas pressurized to about 500 Torr to about 22,000 Torr. At each end of the housing the lamp is connected by electrodes and wires to a pulse generator. The pulse generator generates an initial pulse voltage to breakdown the impedance of the neon gas. Then the pulse generator delivers a current through the neon gas to create an electrical arc that emits light having wavelengths from about 620 nanometers to about 645 nanometers. A method for activating a photosensitizer is provided. Initially, a photosensitizer is administered to a patient and allowed time to be absorbed into target cells. Then the high pressure neon arc lamp is used to illuminate the target cells with red light having wavelengths from about 620 nanometers to about 645 nanometers. The red light activates the photosensitizers to start a chain reaction that may involve oxygen free radicals to destroy the target cells. In this manner, a high pressure neon arc lamp that is inexpensive and efficiently generates red light useful in photodynamic therapy is provided.

  13. Engineering a C-Phase quantum gate: optical design and experimental realization

    E-Print Network [OSTI]

    Andrea Chiuri; Chiara Greganti; Paolo Mataloni

    2012-04-12T23:59:59.000Z

    A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

  14. Noise-Protected Gate for Six-Electron Double-Dot Qubits

    E-Print Network [OSTI]

    Sebastian Mehl; David P. DiVincenzo

    2014-08-05T23:59:59.000Z

    Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum dots: singlet and triplet states in this shell have identical charge distributions. Our phase-gate simulations, which include $1/f$ charge noise from fluctuating traps, show that this symmetry is most effectively exploited if the gate operation switches rapidly between sweet spots deep in the (3,3) and (4,2) charge stability regions; fidelities very close to one are predicted if subnanosecond switching can be performed.

  15. High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics

    E-Print Network [OSTI]

    Pecunia, Vincenzo; Banger, Kulbinder; Sirringhaus, Henning

    2015-01-13T23:59:59.000Z

    energy offsets (? 1 eV) between the conduction/valence bands of the semiconductor and the gate dielectric are needed to confine the charge carriers at the active interface and minimize undesirable charge injection from the semiconductor into the gate... in solution, all the other polymers came in the form of pellets or powder and were dissolved in suitable anhydrous organic solvents: P?MS was dissolved in xylene at a concentration of 60 mg mL-1; SAN in butyronitrile at 40 mg mL-1; PC in 1,2-dichlorobenzene...

  16. Grating-gate tunable plasmon absorption in InP and GaN based R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    Grating-gate tunable plasmon absorption in InP and GaN based HEMTs R. E. Peale*a , H. Saxenaa , W, Inc., 1195 Atlas Road, Columbia SC, USA 29209 ABSTRACT Gate-voltage tunable plasmon resonances incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation was observed

  17. A Technique for Low Power Dynamic Circuit Design in 32nm Double-Gate FinFET Technology

    E-Print Network [OSTI]

    Ayers, Joseph

    the leakage current (this is accomplished by connecting the back gate to the clock signal of the dynamic. By taking advantage of the independent double gate FinFET, Vth is controlled dynamically by biasing the back and drain of a device are connected to those of the other device. Drain Source Figure 1. FinFET structure

  18. Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in

    E-Print Network [OSTI]

    Lipasti, Mikko H.

    affect device performance and lead to timing violations; as well as gate-oxide wearout [3] which can probability of oxide breakdown, leading to a hard failure of a device that exceeds its intended (or targetedAbstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause

  19. Electrophoretic-like Gating Used To Control Metal-Insulator Transitions in Electronically Phase Separated Manganite Wires

    E-Print Network [OSTI]

    Tennessee, University of

    traditional carrier doping and by inducing electroresistive phase transitions in the material. In the case, and an electric field applied to the gate acts to change the material's access to electrons. This switchingElectrophoretic-like Gating Used To Control Metal-Insulator Transitions in Electronically Phase

  20. Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks N. Zaslavsky Abstract Substrate hot electron stress was applied on n+ -ringed n-channel MOS capacitors with TiN/Hf-silicate. Introduction Hafnium silicate based high-j gate dielectrics have been put forth as the leading candidates

  1. High pressure liquid level monitor

    DOE Patents [OSTI]

    Bean, Vern E. (Frederick, MD); Long, Frederick G. (Ijamsville, MD)

    1984-01-01T23:59:59.000Z

    A liquid level monitor for tracking the level of a coal slurry in a high-pressure vessel including a toroidal-shaped float with magnetically permeable bands thereon disposed within the vessel, two pairs of magnetic field generators and detectors disposed outside the vessel adjacent the top and bottom thereof and magnetically coupled to the magnetically permeable bands on the float, and signal processing circuitry for combining signals from the top and bottom detectors for generating a monotonically increasing analog control signal which is a function of liquid level. The control signal may be utilized to operate high-pressure control valves associated with processes in which the high-pressure vessel is used.

  2. Level indicator for pressure vessels

    DOE Patents [OSTI]

    Not Available

    1982-04-28T23:59:59.000Z

    A liquid-level monitor for tracking the level of a coal slurry in a high-pressure vessel including a toroidal-shaped float with magnetically permeable bands thereon disposed within the vessel, two pairs of magnetic-field generators and detectors disposed outside the vessel adjacent the top and bottom thereof and magnetically coupled to the magnetically permeable bands on the float, and signal-processing circuitry for combining signals from the top and bottom detectors for generating a monotonically increasing analog control signal which is a function of liquid level. The control signal may be utilized to operate high-pressure control valves associated with processes in which the high-pressure vessel is used.

  3. An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chuiping; Chu, Shih-I; Han, Siyuan

    2004-03-31T23:59:59.000Z

    A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states ...

  4. Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2003-04-17T23:59:59.000Z

    We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also ...

  5. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23T23:59:59.000Z

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  6. SUBNANOWATT MICROBUBBLE PRESSURE TRANSDUCER C. A. Gutierrez*

    E-Print Network [OSTI]

    Meng, Ellis

    pprrr g &&&& 421 2 3 2 (1) where r is the bubble radius (dots denote time-derivative), pg and p microchamber, for pressure sensing. Pressure-induced bubble size variation is detected by electrochemical pressure measurement applications. INTRODUCTION It is known that gas bubbles respond to external pressure

  7. Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator MetalOxideSemiconductor Field-Effect-Transistors

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    ) and the back-gate oxide (tb) thickness is 2 nm. The doping in the p-type body and n+ source/drain regions­Oxide­Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential M. Jagadesh KUMAR Ã and G. Venkateshwar surface potential profile at the back gate of an asymmetrical double gate (DG) silicon-on-insulator (SOI

  8. IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation-Doped

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation--We demonstrate dual-gate AlGaN/GaN modula- tion-doped field-effect transistors (MODFETs) with gate-lengths of 0 power amplifiers. Index Terms--AlGaN/GaN, broadband power amplifiers, dual-gate FETs. I. INTRODUCTION

  9. Bonus points The National Access Scheme

    E-Print Network [OSTI]

    Chen, Ying

    Bonus points The National Access Scheme ANU offers bonus points for nationally strategic senior secondary subjects, and in recognition of difficult circumstances that students face in their studies. Bonus) will be awarded. Bonus points to do not apply to programs with an ATAR cut-off of 98 or higher. Bonus Points

  10. Effect of bed pressure drop on performance of a CFB boiler

    SciTech Connect (OSTI)

    Hairui Yang; Hai Zhang; Shi Yang; Guangxi Yue; Jun Su; Zhiping Fu [Tsinghua University, Beijing (China). Department of Thermal Engineering

    2009-05-15T23:59:59.000Z

    The effect of bed pressure drop and bed inventory on the performances of a circulating fluidized bed (CFB) boiler was studied. By using the state specification design theory, the fluidization state of the gas-solids flow in the furnace of conventional CFB boilers was reconstructed to operate at a much lower bed pressure drop by reducing bed inventory and control bed quality. Through theoretical analysis, it was suggested that there would exist a theoretical optimal value of bed pressure drop, around which the boiler operation can achieve the maximal combustion efficiency and with significant reduction of the wear of the heating surface and fan energy consumption. The analysis was validated by field tests carried out in a 75 t/h CFB boiler. At full boiler load, when bed pressure drop was reduced from 7.3 to 3.2 kPa, the height of the dense zone in the lower furnace decreased, but the solid suspension density profile in the upper furnace and solid flow rate were barely influenced. Consequently, the average heat transfer coefficient in the furnace was kept nearly the same and the furnace temperature increment was less than 17{sup o}C. It was also found that the carbon content in the fly ash decreased first with decreasing bed pressure drop and then increased with further increasing bed pressure drop. The turning point with minimal carbon content was referred to as the point with optimal bed pressure drop. For this boiler, at the optimum point the bed pressure was around 5.7 kPa with the overall excess air ratio of 1.06. When the boiler was operated around this optimal point, not only the combustion efficiency was improved, but also fan energy consumption and wear of heating surface were reduced. 23 refs., 6 figs., 4 tabs.

  11. Thermosensitive gating effect and selective gas adsorption in a porous

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItemResearch >Internship Program The NIF andPoints ofProjectcoordination nanocage |

  12. Table A1 Molar mass, gas constant, and critical-point properties

    E-Print Network [OSTI]

    Kostic, Milivoje M.

    of carbon dioxide, CO2 Table A­21 Ideal-gas properties of carbon monoxide, CO Table A­22 Ideal Properties of the atmosphere at high altitude Table A­17 Ideal-gas properties of air Table A­18 Ideal-point properties Molar mass, constant, Temperature, Pressure, Volume, Substance Formula M kg/kmol R kJ/kg·K* K MPa

  13. Point defects and high temperature creep of NiO single crystals (*) J. Cabrera-Cano

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    durations between 1 h and 18 h have been used, depending on temperature creep test, with no influence on mL-119 Point defects and high temperature creep of NiO single crystals (*) J. Cabrera MPa-150 MPa. Oxygen partial pressures were varied between 10-5 atm. and air. The steady state creep

  14. Power gating is usually driven by a predictive control, and frequent mispredictions can counter-productively lead to a large increase in

    E-Print Network [OSTI]

    Sorin, Daniel J.

    frames it can consume 70% more energy than a system without power gating. When adding a feature of the most promising mechanisms for reducing leakage energy is power gating, whereby leakage energy is saved is power gated off, some energy is needed for turning the component off and then on again. If the power

  15. Managed Pressure Drilling Candidate Selection

    E-Print Network [OSTI]

    Nauduri, Anantha S.

    2010-07-14T23:59:59.000Z

    Managed Pressure Drilling now at the pinnacle of the 'Oil Well Drilling' evolution tree, has itself been coined in 2003. It is an umbrella term for a few new drilling techniques and some preexisting drilling techniques, all of them aiming to solve...

  16. Gas Exchange, Partial Pressure Gradients,

    E-Print Network [OSTI]

    Riba Sagarra, Jaume

    Gas Exchange, Partial Pressure Gradients, and the Oxygen Window Johnny E. Brian, Jr., M of circulatory and gas transport physiology, and the best place to start is with normobaric physiology. LIFE affect the precise gas exchange occurring in individual areas of the lungs and body tissues. To make

  17. Atmospheric-pressure plasma jet

    DOE Patents [OSTI]

    Selwyn, Gary S. (Los Alamos, NM)

    1999-01-01T23:59:59.000Z

    Atmospheric-pressure plasma jet. A .gamma.-mode, resonant-cavity plasma discharge that can be operated at atmospheric pressure and near room temperature using 13.56 MHz rf power is described. Unlike plasma torches, the discharge produces a gas-phase effluent no hotter than 250.degree. C. at an applied power of about 300 W, and shows distinct non-thermal characteristics. In the simplest design, two concentric cylindrical electrodes are employed to generate a plasma in the annular region therebetween. A "jet" of long-lived metastable and reactive species that are capable of rapidly cleaning or etching metals and other materials is generated which extends up to 8 in. beyond the open end of the electrodes. Films and coatings may also be removed by these species. Arcing is prevented in the apparatus by using gas mixtures containing He, which limits ionization, by using high flow velocities, and by properly shaping the rf-powered electrode. Because of the atmospheric pressure operation, no ions survive for a sufficiently long distance beyond the active plasma discharge to bombard a workpiece, unlike low-pressure plasma sources and conventional plasma processing methods.

  18. Quantum Mechanical Pressure Frank Rioux

    E-Print Network [OSTI]

    Rioux, Frank

    by the kinetic theory of gases for an individual gas molecule. #12; Planck's constant. Using de Broglie's equation in the classical expression for kinetic energy converts provides, as we see now, a quantum interpretation for gas pressure. #12;To show this we will consider

  19. Stirling engine with pressurized crankcase

    SciTech Connect (OSTI)

    Corey, John A. (Melrose, NY)

    1988-01-01T23:59:59.000Z

    A two piston Stirling engine wherein the pistons are coupled to a common crankshaft via bearing means, the pistons include pad means to minimize friction between the pistons and the cylinders during reciprocation of the pistons, means for pressurizing the engine crankcase, and means for cooling the crankshaft and the bearing means eliminating the need for oil in the crankcase.

  20. Are global trade negotiations behind a fragmented world of "gated globalization"?

    E-Print Network [OSTI]

    Bandyopadhyay, Antar

    Are global trade negotiations behind a fragmented world of "gated globalization"? James Lake In a very simple three country model where global trade negotiations precede a sequential Free Trade. Even though sequential FTA for- mation may lead to global free trade if governments have not previously

  1. Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

  2. Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints

    E-Print Network [OSTI]

    Kolodny, Avinoam

    Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

  3. Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal employs power transmission lines (PTL) that supply power to integrated circuits instead of using is able to reduce SSN and enhance power and signal integrity. Pseudo-balanced power transmission line (PB

  4. Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime

    E-Print Network [OSTI]

    Recanati, Catherine

    Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent as promising thermoelectric devices1 . In comparison to their bulk counterparts, they provide opportunities of thermoelectric conversion at a given temperature T . Indeed, they allow to reduce the phonon contribution ph

  5. Phase transitions in Dual-Gated Bilayer Graphene Gregory S. Boebinger, National High Magnetic Field Laboratory

    E-Print Network [OSTI]

    Weston, Ken

    Phase transitions in Dual-Gated Bilayer Graphene Gregory S. Boebinger, National High Magnetic Field Laboratory DMR-Award 0654118 DC Field Facility Bilayer graphene, consisting of two layers of carbon atoms of the degeneracy of the electronic states in the graphene bilayer. Resistivity plotted as a function of the front

  6. Neural mechanisms of saccade target selection: gated accumulator model of the visualmotor cascade

    E-Print Network [OSTI]

    Schall, Jeffrey D.

    Neural mechanisms of saccade target selection: gated accumulator model of the visual­motor cascade, Vanderbilt University, PMB 407817, 2301 Vanderbilt Place, Nashville, TN 37240-7817, USA Keywords: accumulator neurons in the frontal eye field as evidence for stimulus salience that is accumulated in a network

  7. ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title

    E-Print Network [OSTI]

    1 Title: ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title: ERK2 signal-regulated kinase (ERK) plays an important role in the underlying molecular mechanisms. ERK. Blockade of ERK activation prevents long- lasting behavioral changes, including psychomotor sensitization

  8. Accuracy of gates in a quantum computer based on vibrational eigenstates Dmitri Babikov

    E-Print Network [OSTI]

    Reid, Scott A.

    of quantum gates in such a system. Optimal control theory and numerical time-propagation of vibrational wave the computational sciences:2 ``Quantum computing would be to ordinary com- puting what nuclear energy is to fire'' consisting of two states 0 and 1 that have been harnessed for running quantum computing algorithms, setting

  9. Na K -pump ligands modulate gating of palytoxin-induced ion channels

    E-Print Network [OSTI]

    Gadsby, David

    Na K -pump ligands modulate gating of palytoxin-induced ion channels Pablo Artigas and David C (received for review September 26, 2002) The Na K pump is a ubiquitous P-type ATPase that binds three -ion occlusion to phosphorylation of the pump by ATP and of K -ion occlusion to its dephosphorylation

  10. Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire

    SciTech Connect (OSTI)

    Wójcik, P.; Adamowski, J., E-mail: adamowski@fis.agh.edu.pl; Spisak, B. J.; Wo?oszyn, M. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, Kraków (Poland)

    2014-03-14T23:59:59.000Z

    A theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the electron current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied the operation of the spin transistor under the following conditions: (A) the full spin polarization of electrons in the contacts, zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For case (A), the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for case (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for case (B) have been compared with the recent experimental data and a good agreement has been found.

  11. Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors

    E-Print Network [OSTI]

    Dekker, Cees

    Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

  12. REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS

    E-Print Network [OSTI]

    Sheikholeslami, Ali

    REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS David Halupka@eecg}.toronto.edu ABSTRACT This paper discusses an implementation of a dual- microphone phase-based speech enhancement or irrelevant conversations, are present has fueled research interest in the areas of speech enhancement

  13. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25T23:59:59.000Z

    of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 Ã?Â? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

  14. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

    1996-01-01T23:59:59.000Z

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  15. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

    E-Print Network [OSTI]

    Garfunkel, Eric

    Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing-8087 Received 13 April 2005; accepted 6 June 2005; published online 26 July 2005 A silicate reaction between process route to interface elimination, while producing a silicate dielectric with a higher temperature

  16. Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry applications D. Visvikis, a* M Angeles, USA Abstract One of the roles for MC simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP

  17. Validation of GATE 6.1 for targeted radiotherapy of metastic melanoma I-labeled benzamide

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Validation of GATE 6.1 for targeted radiotherapy of metastic melanoma using 131 I for the treatment of malignant melanoma after injection of a new specific radiopharmaceutical labeled with iodine, named ICF01012, selected to treat35 the malignant melanoma [Chezal et al 2008]. 131 I-labeled ICF01012

  18. New approach to manufacturing field emitter arrays with sub-half-micron gate apertures

    E-Print Network [OSTI]

    Lee, Jong Duk

    insulator by local oxidation of silicon LOCOS , resulting in the reduction of the gate hole size due. Considering the cathode current level required for flat panel display applications and the measured emission-to-peak. © 1996 American Vacuum Society. I. INTRODUCTION Recently, much attention1,2 has been given to studying

  19. Evidence of gating in hundred nanometer diameter pores: an experimental and theoretical study

    SciTech Connect (OSTI)

    Letant, S E; Schaldach, C M; Johnson, M R; Sawvel, A; Bourcier, W L; Wilson, W D

    2006-01-11T23:59:59.000Z

    We report on the observation of an unexpected gating mechanism at the 100 nm scale on track-etched polycarbonate membranes. Transport measurements of methyl viologen performed by absorption spectroscopy under various pH conditions demonstrated that perfect gating was achieved for 100 nm diameter pores at pH 2, while the positively charged molecular ions moved through the membrane according to diffusion laws at pH 5. An oppositely charged molecular ion, naphthalene disulfonate, in the same membrane, showed the opposite trend: diffusion of the negative ion at pH 2 and perfect gating at pH 5. The influence of parameters such as ionic strength and membrane surface coating were also investigated. A theoretical study of the system shows that at this larger length scale the magnitude of the electric field in the vicinity of the pores is too small to account for the experimental observations, rather, it is the surface trapping of the mobile ion (Cl{sup -} or Na{sup +}) which gives rise to the gating phenomena. This surprising effect might have potential applications for high-throughput separation of large molecules and bio-organisms.

  20. Membrane Tension, Lipid Adaptation, Conformational Changes, and Energetics in MscL Gating

    E-Print Network [OSTI]

    Rui, Huan; Kumar, Ritesh; Im, Wonpil

    2011-08-03T23:59:59.000Z

    -MscL) is used as a model system; Tb-MscL acts as a safety valve by releasing small osmolytes through the channel opening under extreme hypoosmotic conditions. Based on the assumption that the channel gating involves tilting of the transmembrane (TM) helices, we...

  1. Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo

    E-Print Network [OSTI]

    Bjørnstad, Ottar Nordal

    Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo Associate Professor conductivity (twice that of diamond). Due to Carbon's affinity for tetrahedral bonding, its surface is amenable atoms. Our research focuses on the attachment and diffusion of different atomic species to the surface

  2. Needle-based reflection refractometry of scattering samples using coherence-gated

    E-Print Network [OSTI]

    Boppart, Stephen

    effects of internal refractive index variation in near-infrared optical tomography: a finite element, and K. D. Paulsen, "Effects of refractive index on near- infrared tomography of the breast," Appl. OptNeedle-based reflection refractometry of scattering samples using coherence-gated detection Adam M

  3. Gate Delay Calculation Considering the Crosstalk Capacitances Soroush Abbaspour and Massoud Pedram

    E-Print Network [OSTI]

    Pedram, Massoud

    . As the victim line switches, the impedance of its driving gate changes by orders of magnitude, thereby the various R and C parasitics as well as the capacitive coupling between interconnect lines. However, since of capacitances. For example, for opposite direction switching of two identical coupled lines, switching

  4. A PVT Aware Accurate Statistical Logic Library for High-Metal-Gate Nano-CMOS

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    (T) which may be due to the environment, through self-heating effects or a combination of the two- tion which leads to high electric field and a high GIDL current [16]. (2) The high- gate dielectric and SiO2 spacers meet at the surface of the drain region, causing a high electric field leading to a high

  5. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, D.A.; Haynes, H.D.; Moyers, J.C.; Stewart, B.K.

    1996-01-30T23:59:59.000Z

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner. 8 figs.

  6. A 100V, 3 Phase Gate Driver with integrated digital PWM Generation and Current Sampling

    E-Print Network [OSTI]

    Ng, Wai Tung

    multiple market segments such as automotive, pumps, motion control and home appliances have been demanding and capabilities of this technology will also be included. Background: Smart power ICs (PICs) are increasingly-5], the smart PICs offered only limited analog sensing and gate drive functions. The protections are usually

  7. Dosimetric effect of intrafraction tumor motion in phase gated lung stereotactic body radiotherapy

    SciTech Connect (OSTI)

    Zhao Bo; Yang Yong; Li Tianfang; Li Xiang; Heron, Dwight E.; Huq, M. Saiful [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States) and Department of Radiation Oncology, UT Southwestern Medical Center, Dallas, Texas 75390 (United States); Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)

    2012-11-15T23:59:59.000Z

    Purpose: A major concern for lung intensity modulated radiation therapy delivery is the deviation of actually delivered dose distribution from the planned one due to simultaneous movements of multileaf collimator (MLC) leaves and tumor. For gated lung stereotactic body radiotherapy treatment (SBRT), the situation becomes even more complicated because of SBRT's characteristics such as fewer fractions, smaller target volume, higher dose rate, and extended fractional treatment time. The purpose of this work is to investigate the dosimetric effect of intrafraction tumor motion during gated lung SBRT delivery by reconstructing the delivered dose distribution with real-time tumor motion considered. Methods: The tumor motion data were retrieved from six lung patients. Each of them received three fractions of stereotactic radiotherapy treatments with Cyberknife Synchrony (Accuray, Sunnyvale, CA). Phase gating through an external surrogate was simulated with a gating window of 5 mm. The resulting residual tumor motion curves during gating (beam-on) were retrieved. Planning target volume (PTV) was defined as physician-contoured clinical target volume (CTV) surrounded by an isotropic 5 mm margin. Each patient was prescribed with 60 Gy/3 fractions. The authors developed an algorithm to reconstruct the delivered dose with tumor motion. The DMLC segments, mainly leaf position and segment weighting factor, were recalculated according to the probability density function of tumor motion curve. The new DMLC sequence file was imported back to treatment planning system to reconstruct the dose distribution. Results: Half of the patients in the study group experienced PTV D95% deviation up to 26% for fractional dose and 14% for total dose. CTV mean dose dropped by 1% with tumor motion. Although CTV is almost covered by prescribed dose with 5 mm margin, qualitative comparison on the dose distributions reveals that CTV is on the verge of underdose. The discrepancy happens due to tumor excursion outside of the gating window, which, for our study group, is mainly caused by baseline shift, i.e., the change in general trend of the motion curve during extended period of treatment time. Conclusions: The dose deviation in PTV and CTV due to target motion is not always negligible in gated SBRT. Although CTVs are covered sufficiently with prescribed dose in most cases, some are on the verge of underdose due to large tumor excursion caused by factors such as baseline shift.

  8. Oxygen migration in TiO{sub 2}-based higher-k gate stacks

    SciTech Connect (OSTI)

    Kim, Sang Bum; Brown, Stephen L.; Rossnagel, Stephen M.; Bruley, John; Copel, Matthew; Hopstaken, Marco J. P.; Narayanan, Vijay; Frank, Martin M. [IBM T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States)

    2010-03-15T23:59:59.000Z

    We report on the stability of high-permittivity (high-k) TiO{sub 2} films incorporated in metal-oxide-silicon capacitor structures with a TiN metal gate electrode, focusing on oxygen migration. Titanium oxide films are deposited by either Ti sputtering [physical vapor deposition (PVD)] followed by radical shower oxidation or by plasma-enhanced atomic layer deposition (PEALD) from titanium isopropoxide (Ti{l_brace}OCH(CH{sub 3}){sub 2{r_brace}4}) and O{sub 2} plasma. Both PVD and PEALD films result in near-stoichiometric TiO{sub 2} prior to high-temperature annealing. We find that dopant activation anneals of TiO{sub 2}-containing gate stacks at 1000 deg. C cause 5 A or more of additional SiO{sub 2} to be formed at the gate-dielectric/Si-channel interface. Furthermore, we demonstrate for the first time that oxygen released from TiO{sub 2} diffuses through the TiN gate electrode and oxidizes the poly-Si contact. The thickness of this upper SiO{sub 2} layer continues to increase with increasing TiO{sub 2} thickness, while the thickness of the regrown SiO{sub 2} at the gate-dielectric/Si interface saturates. The upper SiO{sub 2} layer degrades gate stack capacitance, and simultaneously the oxygen-deficient TiO{sub x} becomes a poor insulator. In an attempt to mitigate O loss from the TiO{sub 2}, top and bottom Al{sub 2}O{sub 3} layers are added to the TiO{sub 2} gate dielectric as oxygen barriers. However, they are found to be ineffective, due to Al{sub 2}O{sub 3}-TiO{sub 2} interdiffusion during activation annealing. Bottom HfO{sub 2}/Si{sub 3}N{sub 4} interlayers are found to serve as more effective oxygen barriers, reducing, though not preventing, oxygen downdiffusion.

  9. Dynamics of Low-Pressure and High-Pressure Fuel Cell Air Supply System1

    E-Print Network [OSTI]

    Peng, Huei

    comparing the low pressure system with the high- pressure system equipped with a high-speed compressor pressure of the FC that is defined as the pressure at which the reactant hydrogen and oxygen (air) are delivered to the FC stack flow fields. In the case of stored compressed hydrogen the pressure of the cathode

  10. Tailoring Topology Optimization to Composite Pressure Vessel Design with Simultaneous

    E-Print Network [OSTI]

    Paulino, Glaucio H.

    ;Introduction ­ CNG Pressure Vessels Compressed Natural Gas (CNG) Pressure Vessels CNG Cargo Containment System

  11. Computation of multi-material interactions using point method

    SciTech Connect (OSTI)

    Zhang, Duan Z [Los Alamos National Laboratory; Ma, Xia [Los Alamos National Laboratory; Giguere, Paul T [Los Alamos National Laboratory

    2009-01-01T23:59:59.000Z

    Calculations of fluid flows are often based on Eulerian description, while calculations of solid deformations are often based on Lagrangian description of the material. When the Eulerian descriptions are used to problems of solid deformations, the state variables, such as stress and damage, need to be advected, causing significant numerical diffusion error. When Lagrangian methods are used to problems involving large solid deformat ions or fluid flows, mesh distortion and entanglement are significant sources of error, and often lead to failure of the calculation. There are significant difficulties for either method when applied to problems involving large deformation of solids. To address these difficulties, particle-in-cell (PIC) method is introduced in the 1960s. In the method Eulerian meshes stay fixed and the Lagrangian particles move through the Eulerian meshes during the material deformation. Since its introduction, many improvements to the method have been made. The work of Sulsky et al. (1995, Comput. Phys. Commun. v. 87, pp. 236) provides a mathematical foundation for an improved version, material point method (MPM) of the PIC method. The unique advantages of the MPM method have led to many attempts of applying the method to problems involving interaction of different materials, such as fluid-structure interactions. These problems are multiphase flow or multimaterial deformation problems. In these problems pressures, material densities and volume fractions are determined by satisfying the continuity constraint. However, due to the difference in the approximations between the material point method and the Eulerian method, erroneous results for pressure will be obtained if the same scheme used in Eulerian methods for multiphase flows is used to calculate the pressure. To resolve this issue, we introduce a numerical scheme that satisfies the continuity requirement to higher order of accuracy in the sense of weak solutions for the continuity equations. Numerical examples are given to demonstrate the new scheme.

  12. SU-E-J-185: Gated CBCT Imaging for Positioning Moving Lung Tumor in Lung SBRT Treatment

    SciTech Connect (OSTI)

    Li, X; Li, T; Zhang, Y; Burton, S; Karlovits, B; Clump, D; Heron, D; Huq, M [University of Pittsburgh Medical Center, Pittsburgh, PA (United States)

    2014-06-01T23:59:59.000Z

    Purpose: Lung stereo-tactic body radiotherapy(SBRT) treatment requires high accuracy of lung tumor positioning during treatment, which is usually accomplished by free breathing Cone-Beam computerized tomography (CBCT) scan. However, respiratory motion induced image artifacts in free breathing CBCT may degrade such positioning accuracy. The purpose of this study is to investigate the feasibility of gated CBCT imaging for lung SBRT treatment. Methods: Six Lung SBRT patients were selected for this study. The respiratory motion of the tumors ranged from 1.2cm to 3.5cm, and the gating windows for all patients were set between 35% and 65% of the respiratory phases. Each Lung SBRT patient underwent free-breathing CBCT scan using half-fan scan technique. The acquired projection images were transferred out for off-line analyses. An In-house semi-automatic algorithm was developed to trace the diaphragm movement from those projection images to acquire a patient's specific respiratory motion curve, which was used to correlate respiratory phases with each projection image. Afterwards, a filtered back-projection algorithm was utilized to reconstruct the gated CBCT images based on the projection images only within the gating window. Results: Target volumes determined by free breathing CBCT images were 71.9%±72% bigger than the volume shown in gated CBCT image. On the contrary, the target volume differences between gated CBCT and planning CT images at exhale stage were 5.8%±2.4%. The center to center distance of the targets shown in free breathing CBCT and gated CBCT images were 9.2±8.1mm. For one particular case, the superior boundary of the target was shifted 15mm between free breathing CBCT and gated CBCT. Conclusion: Gated CBCT imaging provides better representation of the moving lung tumor with less motion artifacts, and has the potential to improve the positioning accuracy in lung SBRT treatment.

  13. Ambient pressure fuel cell system

    DOE Patents [OSTI]

    Wilson, Mahlon S. (Los Alamos, NM)

    2000-01-01T23:59:59.000Z

    An ambient pressure fuel cell system is provided with a fuel cell stack formed from a plurality of fuel cells having membrane/electrode assemblies (MEAs) that are hydrated with liquid water and bipolar plates with anode and cathode sides for distributing hydrogen fuel gas and water to a first side of each one of the MEAs and air with reactant oxygen gas to a second side of each one of the MEAs. A pump supplies liquid water to the fuel cells. A recirculating system may be used to return unused hydrogen fuel gas to the stack. A near-ambient pressure blower blows air through the fuel cell stack in excess of reaction stoichiometric amounts to react with the hydrogen fuel gas.

  14. Applications of the Radiation Pressure

    E-Print Network [OSTI]

    Palffy-Muhoray, Peter

    ) of the Sun at the Earth's surface: I = 1.2 kW/m2 · The total energy of all photons falling on 1 m2 per 1;12 Theory · Photon's energy: E = h (400 pN nm) · Photon's momentum: p = h/ · Energy and momentum of photon second · From Maxwell's equations, the energy density of an EM wave: · In terms of irradiance: Pressure P

  15. Variable pressure thermal insulating jacket

    DOE Patents [OSTI]

    Nelson, P.A.; Malecha, R.F.; Chilenskas, A.A.

    1994-09-20T23:59:59.000Z

    A device for controlled insulation of a thermal device is disclosed. The device includes a thermal jacket with a closed volume able to be evacuated to form an insulating jacket around the thermal source. A getter material is in communication with the closed volume of the thermal jacket. The getter material can absorb and desorb a control gas to control gas pressure in the volume of the thermal jacket to control thermal conductivity in the thermal jacket. 10 figs.

  16. Scaling of pressurized fluidized beds

    SciTech Connect (OSTI)

    Guralnik, S.; Glicksman, L.R.

    1994-10-01T23:59:59.000Z

    The project has two primary objectives. The first is to verify a set of hydrodynamic scaling relationships for commercial pressurized fluidized bed combustors (PFBC). The second objective is to investigate solids mixing in pressurized bubbling fluidized beds. American Electric Power`s (AEP) Tidd combined-cycle demonstration plant will provide time-varying pressure drop data to serve as the basis for the scaling verification. The verification will involve demonstrating that a properly scaled cold model and the Tidd PFBC exhibit hydrodynamically similar behavior. An important issue in PFBC design is the spacing of fuel feed ports. The feed spacing is dictated by the fuel distribution and the mixing characteristics within the bed. After completing the scaling verification, the cold model will be used to study the characteristics of PFBCs. A thermal tracer technique will be utilized to study mixing both near the fuel feed region and in the far field. The results allow the coal feed and distributor to be designed for optimal heating.

  17. Reactor Pressure Vessel Head Packaging & Disposal

    SciTech Connect (OSTI)

    Wheeler, D. M.; Posivak, E.; Freitag, A.; Geddes, B.

    2003-02-26T23:59:59.000Z

    Reactor Pressure Vessel (RPV) Head replacements have come to the forefront due to erosion/corrosion and wastage problems resulting from the susceptibility of the RPV Head alloy steel material to water/boric acid corrosion from reactor coolant leakage through the various RPV Head penetrations. A case in point is the recent Davis-Besse RPV Head project, where detailed inspections in early 2002 revealed significant wastage of head material adjacent to one of the Control Rod Drive Mechanism (CRDM) nozzles. In lieu of making ASME weld repairs to the damaged head, Davis-Besse made the decision to replace the RPV Head. The decision was made on the basis that the required weld repair would be too extensive and almost impractical. This paper presents the packaging, transport, and disposal considerations for the damaged Davis-Besse RPV Head. It addresses the requirements necessary to meet Davis Besse needs, as well as the regulatory criteria, for shipping and burial of the head. It focuses on the radiological characterization, shipping/disposal package design, site preparation and packaging, and the transportation and emergency response plans that were developed for the Davis-Besse RPV Head project.

  18. Pressure safety program Lawrence Livermore National Laboratory

    SciTech Connect (OSTI)

    Borzileri, C.; Traini, M.

    1992-10-01T23:59:59.000Z

    The Lawrence Livermore National Laboratory (LLNL) is a Research and Development facility. Programs include research in: nuclear weapons, energy, environmental, biomedical, and other DOE funded programs. LLNL is managed by the University of California for the Department of Energy. Many research and development programs require the use of pressurized fluid systems. In the early 1960`s, courses were developed to train personnel to safely work with pressurized systems. These courses served as a foundation for the Pressure Safety Program. The Pressure Safety Program is administered by the Pressure Safety Manager through the Hazards Control Department, and responsibilities include: (1) Pressure Safety course development and training, (2) Equipment documentation, tracking and inspections/retests, (3) Formal and informal review of pressure systems. The program uses accepted codes and standards and closely follows the DOE Pressure Safety Guidelines Manual. This manual was developed for DOE by Lawrence Livermore National Laboratory. The DOE Pressure Safety Guidelines Manual defines five (5) basic elements which constitute this Pressure Safety Program. These elements are: (1) A Pressure Safety Manual, (2) A Safety Committee, (3) Personnel who are trained and qualified, (4) Documentation and accountability for each pressure vessel or system, (5) Control of the selection and the use of high pressure hardware.

  19. Anticorrelation between Surface and Subsurface Point Defects...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    between Surface and Subsurface Point Defects and the Impact on the Redox Chemistry of TiO2(110). Anticorrelation between Surface and Subsurface Point Defects and the...

  20. Measuring barometric pressure with a manifold pressure sensor in a microprocessor based engine control system

    SciTech Connect (OSTI)

    Pauwels, M.A.; Wright, D.O.

    1986-07-15T23:59:59.000Z

    A microprocessor based electronic engine control system is described for an internal combustion engine, a method for updating the stored ambient pressure signal by measuring the ambient barometric pressure during engine operation using a manifold pressure sensor. The method consists of: generating timing signals indicating the rotational position of an engine member and including a signal indicating a predetermined rotational position in the rotation of the engine member; generating a pressure signal from the manifold pressure sensor representing the pressure surrounding the sensor in response to the predetermined rotational position; reading the value of ambient barometric pressure stored in the memory of the microprocessor; comparing the value of the barometric pressure stored in the memory of the microprocessor and the value of the pressure signal; increasing the value of the barometric pressure by one unit to generate a new barometric pressure value when the value of the pressure signal is greater than the value of the barometric pressure; comparing the new barometric pressure value with a predetermined fixed constant representing the maximum barometric pressure; and storing in the memory of the microprocessor either the new barometric pressure value if equal to or less than the fixed constant or the value of the maximum barometric pressure if the new barometric pressure value is greater than the fixed constant.

  1. Inflection point inflation within supersymmetry

    SciTech Connect (OSTI)

    Enqvist, Kari [Physics Department and Helsinki Institute of Physics, FI-00014 University of Helsinki (Finland); Mazumdar, Anupam; Stephens, Philip, E-mail: kari.enqvist@helsinki.fi, E-mail: a.mazumdar@lancaster.ac.uk, E-mail: p.stephens@lancaster.ac.uk [Physics Department, Lancaster University, Lancaster, LA1 4YB (United Kingdom)

    2010-06-01T23:59:59.000Z

    We propose to address the fine tuning problem of inflection point inflation by the addition of extra vacuum energy that is present during inflation but disappears afterwards. We show that in such a case, the required amount of fine tuning is greatly reduced. We suggest that the extra vacuum energy can be associated with an earlier phase transition and provide a simple model, based on extending the SM gauge group to SU(3){sub C} × SU(2){sub L} × U(1){sub Y} × U(1){sub B?L}, where the Higgs field of U(1){sub B?L} is in a false vacuum during inflation. In this case, there is virtually no fine tuning of the soft SUSY breaking parameters of the flat direction which serves as the inflaton. However, the absence of radiative corrections which would spoil the flatness of the inflaton potential requires that the U(1){sub B?L} gauge coupling should be small with g{sub B?L} ? 10{sup ?4}.

  2. AN INTERIOR POINT METHOD FOR MATHEMATICAL PROGRAMS ...

    E-Print Network [OSTI]

    Abstract. Interior point methods for nonlinear programs (NLP) are adapted for solution of mathematical programs with complementarity constraints (MPCCs).

  3. Differential Point Rendering Aravind Kalaiah Amitabh Varshney

    E-Print Network [OSTI]

    Varshney, Amitabh

    Differential Point Rendering Aravind Kalaiah Amitabh Varshney University of Maryland1 Abstract. We present a novel point rendering primitive, called Differential Point (DP), that captures the local-based models. This information is used to efficiently render the surface as a collection of local neighborhoods

  4. Level Set Implementations on Unstructured Point Cloud

    E-Print Network [OSTI]

    Duncan, James S.

    Level Set Implementations on Unstructured Point Cloud by HO, Hon Pong A Thesis Submitted;Level Set Implementations on Unstructured Point Cloud by HO, Hon Pong This is to certify that I have implementations on unstructured point cloud 15 3.1 Level set initialization

  5. Pressure Data: BOP Summary 28 May 2010

    Broader source: Energy.gov [DOE]

    This is a schematic of the BOP stack with the static pressure data recoded on the 28th of May and shows pressures before and after the attempted top kill and junk shots.

  6. Effect of high pressure on structural oddities 

    E-Print Network [OSTI]

    Johnstone, Russell D. L.

    2010-01-01T23:59:59.000Z

    This thesis describes the effect of pressure on crystal structures that are in some way unusual. The aim was to investigate whether pressure could be used to force these ‘structural oddities’ to conform to more conventional ...

  7. Nanocomposite Flexible Pressure Sensor for Biomedical Applications

    E-Print Network [OSTI]

    Fachin, F.

    A new approach for the fabrication of flexible pressure sensors based on aligned carbon nanotubes (A-CNTs) is described in this paper. The technology is suitable for blood pressure sensors that can be attached to a stent-graft ...

  8. An investigation of convergence pressure methods

    E-Print Network [OSTI]

    Wattenbarger, Robert Chick

    1986-01-01T23:59:59.000Z

    and subsequent phase behavior calculations, various physical properties of each component are needed. Table 1 lists the physical properties of each of the pure components found in the reservoir fluids. The physical properties of the C7+ must be found..., the pressure at which the K-curves appear to converge to unity is called the apparent convergence pressure. Unless stated otherwise, the convergence pressure of a system implies its apparent convergence pressure. For an N-component, two phase system at a...

  9. High pressure fiber optic sensor system

    SciTech Connect (OSTI)

    Guida, Renato; Xia, Hua; Lee, Boon K; Dekate, Sachin N

    2013-11-26T23:59:59.000Z

    The present application provides a fiber optic sensor system. The fiber optic sensor system may include a small diameter bellows, a large diameter bellows, and a fiber optic pressure sensor attached to the small diameter bellows. Contraction of the large diameter bellows under an applied pressure may cause the small diameter bellows to expand such that the fiber optic pressure sensor may measure the applied pressure.

  10. Carbon nanotube temperature and pressure sensors

    DOE Patents [OSTI]

    Ivanov, Ilia N; Geohegan, David Bruce

    2013-10-29T23:59:59.000Z

    The present invention, in one embodiment, provides a method of measuring pressure or temperature using a sensor including a sensor element composed of a plurality of carbon nanotubes. In one example, the resistance of the plurality of carbon nanotubes is measured in response to the application of temperature or pressure. The changes in resistance are then recorded and correlated to temperature or pressure. In one embodiment, the present invention provides for independent measurement of pressure or temperature using the sensors disclosed herein.

  11. Noninvasive Positive Pressure Ventilation in the Emergency

    E-Print Network [OSTI]

    Noninvasive Positive Pressure Ventilation in the Emergency Department Mei-Ean Yeow, MDa , Jairo I, 1411 East 31st Street, Oakland, CA 94602-1018, USA Noninvasive ventilation is defined as the provision ventilators consist of both negative and positive pressure ventilators. Because negative pressure ventilation

  12. Elec 331 -Blood Pressure Heart Valves

    E-Print Network [OSTI]

    Pulfrey, David L.

    Elec 331 - Blood Pressure 1 Heart Valves · Atrio-Ventricular (AV) ­ Bicuspid / Mitral (left - Blood Pressure 2 Phases of the Heart · Systole (Max BP) ­ Ventricle contracted ­ Aorta inflated 331 - Blood Pressure 3 Korotkov Phases / Sounds S D P P Nothing Sharp Swish Faint Nothing 0 1 2-3 4 5

  13. Retrofit of Tehran City Gate Station C.G.S. No. 2 by Using Turboexpander

    E-Print Network [OSTI]

    Seresht, R. T.; Ja, H. K.

    2010-01-01T23:59:59.000Z

    gas pressure reducing stations in Iran (both from capacity and inlet pressure perspectives), has been selected as a case study. In first step waste of energy was calculated by using exergy analysis and in second step, by using expansion turbines...

  14. The Standard Test Method for Measurement of Extreme Pressure Properties of Various Lubricating oils by Using Four Ball Extreme Pressure oil Testing Machine.

    E-Print Network [OSTI]

    Prof A. D. Dongare

    Abstract:––As per the American Society of Testing Materials (ASTM-D-2783), the standard test method for measurement of Extreme Pressure (E.P.) properties of lubricating oils by using Four Ball Extreme Pressure Oil Testing Machine (F.B.E.P.O.T.M.) plays an important role in oil industry while selecting such oils as a lubricating media for testing various types of E.P. lubricating oils. Lubricating oils are needed to reduce frictional losses as well as to support working load and avoid metal to metal contact between the components working together for obtaining desired functions in machines.This F.B.E.P.O.T.M is utilized for finding the load carrying capacity and weld point of different types of lubricants/Oils fluids. Extreme Pressure (E.P.) properties like-Load wear Index,Weld Point, Non load are the basis of differentiation of Lubricating oils having low, medium and high level of extreme pressure properties. In this paper we find out or Evaluate Tribological (E.P.) properties i e. of load carrying capacity and weld point or various oils or lubricants used for various purposes. It?s necessary to form a lubricating fluid film of low shear strength, then it is possible to decide the film breaking strength in other words load carrying capacity of oil can be calculated.

  15. Method and system for measuring multiphase flow using multiple pressure differentials

    DOE Patents [OSTI]

    Fincke, James R. (Idaho Falls, ID)

    2001-01-01T23:59:59.000Z

    An improved method and system for measuring a multiphase flow in a pressure flow meter. An extended throat venturi is used and pressure of the multiphase flow is measured at three or more positions in the venturi, which define two or more pressure differentials in the flow conduit. The differential pressures are then used to calculate the mass flow of the gas phase, the total mass flow, and the liquid phase. The method for determining the mass flow of the high void fraction fluid flow and the gas flow includes certain steps. The first step is calculating a gas density for the gas flow. The next two steps are finding a normalized gas mass flow rate through the venturi and computing a gas mass flow rate. The following step is estimating the gas velocity in the venturi tube throat. The next step is calculating the pressure drop experienced by the gas-phase due to work performed by the gas phase in accelerating the liquid phase between the upstream pressure measuring point and the pressure measuring point in the venturi throat. Another step is estimating the liquid velocity in the venturi throat using the calculated pressure drop experienced by the gas-phase due to work performed by the gas phase. Then the friction is computed between the liquid phase and a wall in the venturi tube. Finally, the total mass flow rate based on measured pressure in the venturi throat is calculated, and the mass flow rate of the liquid phase is calculated from the difference of the total mass flow rate and the gas mass flow rate.

  16. Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  17. Cerebellar Purkinje cell death in the P/Q -type voltage-gated calcium ion channel mutant mouse, leaner 

    E-Print Network [OSTI]

    Frank-Cannon, Tamy Catherine

    2006-04-12T23:59:59.000Z

    Mutations of the á1A subunit of P/Q-type voltage-gated calcium channels are responsible for several inherited disorders affecting humans, including familial hemiplegic migraine, episodic ataxia type 2 and spinocerebellar ...

  18. A review of the use and potential of the GATE Monte Carlo simulation code for radiation therapy and dosimetry applications

    SciTech Connect (OSTI)

    Sarrut, David, E-mail: david.sarrut@creatis.insa-lyon.fr [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA-Lyon (France) [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA-Lyon (France); Université Lyon 1 (France); Centre Léon Bérard (France)] [France; Bardiès, Manuel; Marcatili, Sara; Mauxion, Thibault [Inserm, UMR1037 CRCT, F-31000 Toulouse, France and Université Toulouse III-Paul Sabatier, UMR1037 CRCT, F-31000 Toulouse (France)] [Inserm, UMR1037 CRCT, F-31000 Toulouse, France and Université Toulouse III-Paul Sabatier, UMR1037 CRCT, F-31000 Toulouse (France); Boussion, Nicolas [INSERM, UMR 1101, LaTIM, CHU Morvan, 29609 Brest (France)] [INSERM, UMR 1101, LaTIM, CHU Morvan, 29609 Brest (France); Freud, Nicolas; Létang, Jean-Michel [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA-Lyon, Université Lyon 1, Centre Léon Bérard, 69008 Lyon (France)] [Université de Lyon, CREATIS, CNRS UMR5220, Inserm U1044, INSA-Lyon, Université Lyon 1, Centre Léon Bérard, 69008 Lyon (France); Jan, Sébastien [CEA/DSV/I2BM/SHFJ, Orsay 91401 (France)] [CEA/DSV/I2BM/SHFJ, Orsay 91401 (France); Loudos, George [Department of Medical Instruments Technology, Technological Educational Institute of Athens, Athens 12210 (Greece)] [Department of Medical Instruments Technology, Technological Educational Institute of Athens, Athens 12210 (Greece); Maigne, Lydia; Perrot, Yann [UMR 6533 CNRS/IN2P3, Université Blaise Pascal, 63171 Aubière (France)] [UMR 6533 CNRS/IN2P3, Université Blaise Pascal, 63171 Aubière (France); Papadimitroulas, Panagiotis [Department of Biomedical Engineering, Technological Educational Institute of Athens, 12210, Athens (Greece)] [Department of Biomedical Engineering, Technological Educational Institute of Athens, 12210, Athens (Greece); Pietrzyk, Uwe [Institut für Neurowissenschaften und Medizin, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and Fachbereich für Mathematik und Naturwissenschaften, Bergische Universität Wuppertal, 42097 Wuppertal (Germany)] [Institut für Neurowissenschaften und Medizin, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany and Fachbereich für Mathematik und Naturwissenschaften, Bergische Universität Wuppertal, 42097 Wuppertal (Germany); Robert, Charlotte [IMNC, UMR 8165 CNRS, Universités Paris 7 et Paris 11, Orsay 91406 (France)] [IMNC, UMR 8165 CNRS, Universités Paris 7 et Paris 11, Orsay 91406 (France); and others

    2014-06-15T23:59:59.000Z

    In this paper, the authors' review the applicability of the open-source GATE Monte Carlo simulation platform based on the GEANT4 toolkit for radiation therapy and dosimetry applications. The many applications of GATE for state-of-the-art radiotherapy simulations are described including external beam radiotherapy, brachytherapy, intraoperative radiotherapy, hadrontherapy, molecular radiotherapy, and in vivo dose monitoring. Investigations that have been performed using GEANT4 only are also mentioned to illustrate the potential of GATE. The very practical feature of GATE making it easy to model both a treatment and an imaging acquisition within the same frameworkis emphasized. The computational times associated with several applications are provided to illustrate the practical feasibility of the simulations using current computing facilities.

  19. Regulation of N-type Voltage-Gated Calcium Channels and Presynaptic Function by Cyclin-Dependent Kinase 5

    E-Print Network [OSTI]

    Su, Susan C.

    N-type voltage-gated calcium channels localize to presynaptic nerve terminals and mediate key events including synaptogenesis and neurotransmission. While several kinases have been implicated in the modulation of calcium ...

  20. Cerebellar Purkinje cell death in the P/Q -type voltage-gated calcium ion channel mutant mouse, leaner

    E-Print Network [OSTI]

    Frank-Cannon, Tamy Catherine

    2006-04-12T23:59:59.000Z

    . The leaner mutation causes reduced calcium ion influx upon activation of P/Q-type voltage-gated calcium channels. This disrupts calcium homeostasis and leads to a loss of cerebellar neurons, including cerebellar Purkinje cells. Because of its similarities...

  1. The design and field evaluation of a new dual pressure and temperature tapered probe

    E-Print Network [OSTI]

    Chartier, Matthew G. (Matthew Garth)

    2005-01-01T23:59:59.000Z

    The T2P is a new penetration device that measures temperature at its tip and pore pressure at a point just above the tip and at a second location near the base of the probe shaft. The main purpose of the T2P, recently ...

  2. WH[eta] under pressure

    SciTech Connect (OSTI)

    Zaleski-Ejgierd, Patryk; Labet, Vanessa; Strobel, Timothy A.; Hoffmann, Roald; Ashcroft, N.W. (Cornell); (CIW)

    2012-05-10T23:59:59.000Z

    An initial observation of the formation of WH under pressure from W gaskets surrounding hydrogen in diamond anvil cells led to a theoretical study of tungsten hydride phases. At P = 1 atm no stoichiometry is found to be stable with respect to separation into the elements, but as the pressure is raised WH{sub n} (n = 1-6, 8) stoichiometries are metastable or stable. WH and WH{sub 4} are calculated to be stable at P > 15 GPa, WH{sub 2} becomes stable at P > 100 GPa and WH{sub 6} at P > 150 GPa. In agreement with experiment, the structure computed for WH is anti-NiAs. WH{sub 2} shares with WH a hexagonal arrangement of tungsten atoms, with hydrogen atoms occupying octahedral and tetrahedral holes. For WH{sub 4} the W atoms are in a distorted fcc arrangement. As the number of hydrogens rises, the coordination of W by H increases correspondingly, leading to a twelve-coordinated W in WH{sub 6}. In WH{sub 8} H{sub 2} units also develop. All of the hydrides considered should be metallic at high pressure, though the Fermi levels of WH{sub 4} and WH{sub 6} lie in a deep pseudogap. Prodded by these theoretical studies, experiments were then undertaken to seek phases other than WH, exploring a variety of experimental conditions that would favor further reaction. Though a better preparation and characterization of WH resulted, no higher hydrides have as yet been found.

  3. Pulse-controlled quantum gate sequences on a strongly coupled qubit chain

    E-Print Network [OSTI]

    Holger Frydrych; Michael Marthaler; Gernot Alber

    2015-02-12T23:59:59.000Z

    We propose a selective dynamical decoupling scheme on a chain of permanently coupled qubits, which is capable of dynamically suppressing any coupling in the chain by applying sequences of local pulses to the individual qubits. We demonstrate how this pulse control can be used to implement a sequence of quantum gates on the chain which entangles all the qubits. We find that high entanglement fidelities can be achieved as long as the total number of coupled qubits is not too large. We discuss the applicability of our model specifically for superconducting flux qubits which can be strongly coupled to allow for the fast implementation of two-qubit gates. Since dynamically modifying the couplings between flux qubits is challenging, they are a natural candidate for our approach.

  4. A communication-efficient nonlocal measurement with application to communication complexity and bipartite gate capacities

    E-Print Network [OSTI]

    Aram W. Harrow; Debbie W. Leung

    2011-03-04T23:59:59.000Z

    Two dual questions in quantum information theory are to determine the communication cost of simulating a bipartite unitary gate, and to determine their communication capacities. We present a bipartite unitary gate with two surprising properties: 1) simulating it with the assistance of unlimited EPR pairs requires far more communication than with a better choice of entangled state, and 2) its communication capacity is far lower than its capacity to create entanglement. This suggests that 1) unlimited EPR pairs are not the most general model of entanglement assistance for two-party communication tasks, and 2) the entangling and communicating abilities of a unitary interaction can vary nearly independently. The technical contribution behind these results is a communication-efficient protocol for measuring whether an unknown shared state lies in a specified rank-one subspace or its orthogonal complement.

  5. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    ScienceCinema (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

    2012-03-21T23:59:59.000Z

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  6. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J., E-mail: falson@kwsk.t.u-tokyo.ac.jp; Kozuka, Y. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); Maryenko, D. [RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan); Tsukazaki, A. [Institute for Materials Research (IMR), Tohoku University, Sendai 980-8577 (Japan); PRESTO, Japan Science and Technology Agency (JST), Tokyo 102-0075 (Japan); Kawasaki, M. [Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656 (Japan); RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198 (Japan)

    2014-08-28T23:59:59.000Z

    The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  7. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    SciTech Connect (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary) [U.S. Department of Energy Secretary; Gates, Bill (Microsoft, Chairman) [Microsoft, Chairman; Podesta, John (Center for American Progress, Chair and Counselor) [Center for American Progress, Chair and Counselor

    2012-02-28T23:59:59.000Z

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  8. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOE Patents [OSTI]

    Ishida, Emi (Sunnyvale, CA)

    1999-08-10T23:59:59.000Z

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  9. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect (OSTI)

    Feng, Liqiang [College of Science, Liaoning University of Technology, Jinzhou 121000 (China) [College of Science, Liaoning University of Technology, Jinzhou 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Yuan, Minghu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

    2013-12-15T23:59:59.000Z

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  10. A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

    E-Print Network [OSTI]

    D. M. Zajac; T. M. Hazard; X. Mi; K. Wang; J. R. Petta

    2015-02-05T23:59:59.000Z

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  11. Phase gate and readout with an atom/molecule hybrid platform

    E-Print Network [OSTI]

    Elena Kuznetsova; Marko Gacesa; Susanne F. Yelin; Robin Côté

    2009-08-31T23:59:59.000Z

    We suggest a combined atomic/molecular system for quantum computation, which takes advantage of highly developed techniques to control atoms and recent experimental progress in manipulation of ultracold molecules. We show that two atoms of different species in a given site, {\\it e.g.}, in an optical lattice, could be used for qubit encoding, initialization and readout, with one atom carrying the qubit, the other enabling a gate. In particular, we describe how a two-qubit phase gate can be realized by transferring a pair of atoms into the ground rovibrational state of a polar molecule with a large dipole moment, and allowing two molecules to interact via their dipole-dipole interaction. We also discuss how the reverse process of coherently transferring a molecule into a pair of atoms could be used as a readout tool for molecular quantum computers.

  12. Vapor Pressure measurements for dichlorosilane

    E-Print Network [OSTI]

    Morris, Tony Knimbula

    1997-01-01T23:59:59.000Z

    stainless steel surface inside the head. In the user's manual, one of the sections talked about this window and the plugging screw below it. This screw was provided to empty any fluid that might have gotten into that section of the head behind the window... due to being tilted. Immediately afler emptying the fluid, the balance was still unsteady. After allowing the area to dry by leaving the plug off for a few days, the balance readings were stable. It tumed out that the pressure would somehow push...

  13. Reactor pressure vessel vented head

    DOE Patents [OSTI]

    Sawabe, James K. (San Jose, CA)

    1994-01-11T23:59:59.000Z

    A head for closing a nuclear reactor pressure vessel shell includes an arcuate dome having an integral head flange which includes a mating surface for sealingly mating with the shell upon assembly therewith. The head flange includes an internal passage extending therethrough with a first port being disposed on the head mating surface. A vent line includes a proximal end disposed in flow communication with the head internal passage, and a distal end disposed in flow communication with the inside of the dome for channeling a fluid therethrough. The vent line is fixedly joined to the dome and is carried therewith when the head is assembled to and disassembled from the shell.

  14. Electokinetic high pressure hydraulic system

    DOE Patents [OSTI]

    Paul, Phillip H. (Livermore, CA); Rakestraw, David J. (Fremont, CA)

    2000-01-01T23:59:59.000Z

    A compact high pressure hydraulic system having no moving parts for converting electric potential to hydraulic force and for manipulating fluids. Electro-osmotic flow is used to provide a valve and means to compress a fluid or gas in a capillary-based system. By electro-osmotically moving an electrolyte between a first position opening communication between a fluid inlet and outlet and a second position closing communication between the fluid inlet and outlet the system can be configured as a valve. The system can also be used to generate forces as large as 2500 psi that can be used to compress a fluid, either a liquid or a gas.

  15. ARM - Lesson Plans: Air Pressure

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625govInstrumentstdmadap Documentation TDMADAP : XDC documentationBarrow, Alaska Outreach Home RoomPlansPressure

  16. Probing spin entanglement by gate-voltage-controlled interference of current correlation in quantum spin Hall insulators

    E-Print Network [OSTI]

    Wei Chen; Z. D. Wang; R. Shen; D. Y. Xing

    2014-05-21T23:59:59.000Z

    We propose an entanglement detector composed of two quantum spin Hall insulators and a side gate deposited on one of the edge channels. For an ac gate voltage, the differential noise contributed from the entangled electron pairs exhibits the nontrivial step structures, from which the spin entanglement concurrence can be easily obtained. The possible spin dephasing effects in the quantum spin Hall insulators are also included.

  17. Tri-Gate Bulk CMOS Technology for Improved SRAM Scalability Changhwan Shin, Borivoje Nikoli, Tsu-Jae King Liu

    E-Print Network [OSTI]

    Nikolic, Borivoje

    ] is an example of such a design; it utilizes a gate electrode that is physically wrapped around the top portion along a poly-Si gate electrode in an SRAM array, for 15nm nominal STI recess depth. The sequence), pull- 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2 PG2 (a) 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2

  18. Unified approach to topological quantum computation with anyons: From qubit encoding to Toffoli gate

    E-Print Network [OSTI]

    Haitan Xu; J. M. Taylor

    2011-08-01T23:59:59.000Z

    Topological quantum computation may provide a robust approach for encoding and manipulating information utilizing the topological properties of anyonic quasi-particle excitations. We develop an efficient means to map between dense and sparse representations of quantum information (qubits) and a simple construction of multi-qubit gates, for all anyon models from Chern-Simons-Witten SU(2)$_k$ theory that support universal quantum computation by braiding ($k\\geq 3,\\ k \

  19. Gated current integrator for the beam in the RR barrier buckets

    SciTech Connect (OSTI)

    A. Cadorn; C. Bhat; J. Crisp

    2003-06-10T23:59:59.000Z

    At the Fermilab Recycler Ring (RR), the antiproton (pbar) beam will be stored azimuthally in different segments created by barrier buckets. The beam in each segment may have widely varying intensities. They have developed a gated integrator system to measure the beam intensity in each of the barrier bucket. Here they discuss the design of the system and the results of beam measurements using the integrator.

  20. Gated frequency-resolved optical imaging with an optical parametric amplifier for medical applications

    SciTech Connect (OSTI)

    Cameron, S.M.; Bliss, D.E.

    1997-02-01T23:59:59.000Z

    Implementation of optical imagery in a diffuse inhomogeneous medium such as biological tissue requires an understanding of photon migration and multiple scattering processes which act to randomize pathlength and degrade image quality. The nature of transmitted light from soft tissue ranges from the quasi-coherent properties of the minimally scattered component to the random incoherent light of the diffuse component. Recent experimental approaches have emphasized dynamic path-sensitive imaging measurements with either ultrashort laser pulses (ballistic photons) or amplitude modulated laser light launched into tissue (photon density waves) to increase image resolution and transmissive penetration depth. Ballistic imaging seeks to compensate for these {open_quotes}fog-like{close_quotes} effects by temporally isolating the weak early-arriving image-bearing component from the diffusely scattered background using a subpicosecond optical gate superimposed on the transmitted photon time-of-flight distribution. The authors have developed a broadly wavelength tunable (470 nm -2.4 {mu}m), ultrashort amplifying optical gate for transillumination spectral imaging based on optical parametric amplification in a nonlinear crystal. The time-gated image amplification process exhibits low noise and high sensitivity, with gains greater than 104 achievable for low light levels. We report preliminary benchmark experiments in which this system was used to reconstruct, spectrally upcovert, and enhance near-infrared two-dimensional images with feature sizes of 65 {mu}m/mm{sup 2} in background optical attenuations exceeding 10{sup 12}. Phase images of test objects exhibiting both absorptive contrast and diffuse scatter were acquired using a self-referencing Shack-Hartmann wavefront sensor in combination with short-pulse quasi-ballistic gating. The sensor employed a lenslet array based on binary optics technology and was sensitive to optical path distortions approaching {lambda}/100.

  1. A comparison of the full custom, standard cell and gate array design methodologies

    E-Print Network [OSTI]

    Kwan, King-Wai

    1990-01-01T23:59:59.000Z

    A COMPARISON OF THE FULL CUSTOM, STANDARD CELL AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by KING-WAI I&WAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulffllment of the requirements for the degree... approaches, the designers can select appropriate cells in the libraries which meet their specific requirements such as driving capability and power consumption. But standard cell designs can be used to implement specialized macros such as multi-port...

  2. Pressure transient method for front tracking

    SciTech Connect (OSTI)

    Benson, S.M.; Bodvarsson, G.S.

    1983-08-01T23:59:59.000Z

    A pressure transient technique for tracking the advance of cold water fronts during water flooding and goethermal injection operations has been developed. The technique is based on the concept that the steady state pressure buildup in the reservoir region inside the front can be calculated by a fluid skin factor. By analyzing successive pressure falloff tests, the advance of the front in the reservoir can be monitored. The validity of the methods is demonstrated by application to three numerically simulated data sets, a nonisothermal step-rate injection test, a series of pressure falloffs in a multilayered reservoir, and a series of pressure falloff tests in a water flooded oil reservoir.

  3. Mechanics and Applications of Pressure Adaptive Honeycomb

    E-Print Network [OSTI]

    Vos, Roelof

    2009-07-31T23:59:59.000Z

    calculations. In addition, I would like to express my gratitude to the undergraduate students that have helped with the preparations of the experiments: Lauren Kerth, Will Pflug, Tom O?Brien, Thomas Statsny, and Ryan Barnhart. v TABLE OF CONTENTS... and Curvature Induced by Pressure adaptive Honeycomb 55 3.2.1 Pressure adaptive Wing Section 60 3.2.2 Pressure adaptive Gurney Flap 63 3.2.3 Pressure adaptive Solid State Flap 65 3.2.4 Pressure adaptive Engine Inlet 67 vi 3.3 Actuation Sources 71 4.1 Cellular...

  4. Engine having a high pressure hydraulic system and low pressure lubricating system

    DOE Patents [OSTI]

    Bartley, Bradley E. (Manito, IL); Blass, James R. (Bloomington, IL); Gibson, Dennis H. (Chillicothe, IL)

    2000-01-01T23:59:59.000Z

    An engine includes a high pressure hydraulic system having a high pressure pump and at least one hydraulically-actuated device attached to an engine housing. A low pressure engine lubricating system is attached to the engine housing and includes a circulation conduit fluidly connected to an outlet from the high pressure pump.

  5. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    SciTech Connect (OSTI)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Kim, Hwajeong [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Priority Research Center, Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Lee, Joon-Hyung [School of Materials Science and Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Park, Soo-Young; Kang, Inn-Kyu [Department of Polymer Science and Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of)

    2014-09-15T23:59:59.000Z

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 ?m thick LC layer (4-cyano-4{sup ?}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 ?l/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = ?0.2 V and V{sub G} = ?1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

  6. Optimal control of quantum gates and suppression of decoherence in a system of interacting two-level particles

    E-Print Network [OSTI]

    Matthew Grace; Constantin Brif; Herschel Rabitz; Ian A. Walmsley; Robert L. Kosut; Daniel A. Lidar

    2007-04-16T23:59:59.000Z

    Methods of optimal control are applied to a model system of interacting two-level particles (e.g., spin-half atomic nuclei or electrons or two-level atoms) to produce high-fidelity quantum gates while simultaneously negating the detrimental effect of decoherence. One set of particles functions as the quantum information processor, whose evolution is controlled by a time-dependent external field. The other particles are not directly controlled and serve as an effective environment, coupling to which is the source of decoherence. The control objective is to generate target one- and two-qubit unitary gates in the presence of strong environmentally-induced decoherence and under physically motivated restrictions on the control field. The quantum-gate fidelity, expressed in terms of a novel state-independent distance measure, is maximized with respect to the control field using combined genetic and gradient algorithms. The resulting high-fidelity gates demonstrate the feasibility of precisely guiding the quantum evolution via optimal control, even when the system complexity is exacerbated by environmental coupling. It is found that the gate duration has an important effect on the control mechanism and resulting fidelity. An analysis of the sensitivity of the gate performance to random variations in the system parameters reveals a significant degree of robustness attained by the optimal control solutions.

  7. Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

    SciTech Connect (OSTI)

    Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

    2014-02-24T23:59:59.000Z

    We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?°C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

  8. High-pressure microhydraulic actuator

    DOE Patents [OSTI]

    Mosier, Bruce P. (San Francisco, CA) [San Francisco, CA; Crocker, Robert W. (Fremont, CA) [Fremont, CA; Patel, Kamlesh D. (Dublin, CA) [Dublin, CA

    2008-06-10T23:59:59.000Z

    Electrokinetic ("EK") pumps convert electric to mechanical work when an electric field exerts a body force on ions in the Debye layer of a fluid in a packed bed, which then viscously drags the fluid. Porous silica and polymer monoliths (2.5-mm O.D., and 6-mm to 10-mm length) having a narrow pore size distribution have been developed that are capable of large pressure gradients (250-500 psi/mm) when large electric fields (1000-1500 V/cm) are applied. Flowrates up to 200 .mu.L/min and delivery pressures up to 1200 psi have been demonstrated. Forces up to 5 lb-force at 0.5 mm/s (12 mW) have been demonstrated with a battery-powered DC-DC converter. Hydraulic power of 17 mW (900 psi@ 180 uL/min) has been demonstrated with wall-powered high voltage supplies. The force and stroke delivered by an actuator utilizing an EK pump are shown to exceed the output of solenoids, stepper motors, and DC motors of similar size, despite the low thermodynamic efficiency.

  9. Passive tire pressure sensor and method

    DOE Patents [OSTI]

    Pfeifer, Kent Bryant (Los Lunas, NM); Williams, Robert Leslie (Albuquerque, NM); Waldschmidt, Robert Lee (Calgary, CA); Morgan, Catherine Hook (Ann Arbor, MI)

    2007-09-04T23:59:59.000Z

    A surface acoustic wave device includes a micro-machined pressure transducer for monitoring tire pressure. The device is configured having a micro-machined cavity that is sealed with a flexible conductive membrane. When an external tire pressure equivalent to the cavity pressure is detected, the membrane makes contact with ridges on the backside of the surface acoustic wave device. The ridges are electrically connected to conductive fingers of the device. When the detected pressure is correct, selected fingers on the device will be grounded producing patterned acoustic reflections to an impulse RF signal. When the external tire pressure is less than the cavity reference pressure, a reduced reflected signal to the receiver results. The sensor may further be constructed so as to identify itself by a unique reflected identification pulse series.

  10. Passive tire pressure sensor and method

    DOE Patents [OSTI]

    Pfeifer, Kent Bryant; Williams, Robert Leslie; Waldschmidt, Robert Lee; Morgan, Catherine Hook

    2006-08-29T23:59:59.000Z

    A surface acoustic wave device includes a micro-machined pressure transducer for monitoring tire pressure. The device is configured having a micro-machined cavity that is sealed with a flexible conductive membrane. When an external tire pressure equivalent to the cavity pressure is detected, the membrane makes contact with ridges on the backside of the surface acoustic wave device. The ridges are electrically connected to conductive fingers of the device. When the detected pressure is correct, selected fingers on the device will be grounded producing patterned acoustic reflections to an impulse RF signal. When the external tire pressure is less than the cavity reference pressure, a reduced reflected signal to the receiver results. The sensor may further be constructed so as to identify itself by a unique reflected identification pulse series.

  11. Top Hat Pressure System Hyperbaric Test Analysis | Department...

    Broader source: Energy.gov (indexed) [DOE]

    Top Hat Pressure System Hyperbaric Test Analysis Top Hat Pressure System Hyperbaric Test Analysis This file contains data from pressure measurements inside Top Hat 4....

  12. GRADE NUMBER OF CREDITS FACTOR QUALITY POINTS HOW TO COMPUTE A GRADE POINT AVERAGE

    E-Print Network [OSTI]

    Massachusetts at Amherst, University of

    .00 = __________ TOTALS: _________ __________ CREDITS QUALITY PTS. Divide total credits into total quality pointsGRADE NUMBER OF CREDITS FACTOR QUALITY POINTS HOW TO COMPUTE A GRADE POINT AVERAGE A _________ x 4 and the result is the grade point average (GPA). QUALITY PTS. = GPA ____________ = CREDITS

  13. TEG: A High-Performance, Scalable, Multi-Network Point-to-Point Communications Methodology

    E-Print Network [OSTI]

    Lumsdaine, Andrew

    TEG: A High-Performance, Scalable, Multi-Network Point-to-Point Communications Methodology T University Abstract. TEG is a new component-based methodology for point-to-point mes- saging. Developed as part of the Open MPI project, TEG provides a configurable fault-tolerant capability for high

  14. New York Nuclear Profile - Indian Point

    U.S. Energy Information Administration (EIA) Indexed Site

    vnd.ms-excel" 3,"1,040","8,995",98.7,"PWR","applicationvnd.ms-excel","applicationvnd.ms-excel" ,"2,063","16,321",90.3 "Data for 2010" "PWR Pressurized Light Water Reactor."...

  15. On the interest of carbon-coated plasma reactor for advanced gate stack etching processes

    SciTech Connect (OSTI)

    Ramos, R.; Cunge, G.; Joubert, O. [Freescale Semiconductor Inc., 850 Rue Jean Monnet, 38921 Crolles Cedex (France) and Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France)

    2007-03-15T23:59:59.000Z

    In integrated circuit fabrication the most wide spread strategy to achieve acceptable wafer-to-wafer reproducibility of the gate stack etching process is to dry-clean the plasma reactor walls between each wafer processed. However, inherent exposure of the reactor walls to fluorine-based plasma leads to formation and accumulation of nonvolatile fluoride residues (such as AlF{sub x}) on reactor wall surfaces, which in turn leads to process drifts and metallic contamination of wafers. To prevent this while keeping an Al{sub 2}O{sub 3} reactor wall material, a coating strategy must be used, in which the reactor is coated by a protective layer between wafers. It was shown recently that deposition of carbon-rich coating on the reactor walls allows improvements of process reproducibility and reactor wall protection. The authors show that this strategy results in a higher ion-to-neutral flux ratio to the wafer when compared to other strategies (clean or SiOCl{sub x}-coated reactors) because the carbon walls load reactive radical densities while keeping the same ion current. As a result, the etching rates are generally smaller in a carbon-coated reactor, but a highly anisotropic etching profile can be achieved in silicon and metal gates, whose etching is strongly ion assisted. Furthermore, thanks to the low density of Cl atoms in the carbon-coated reactor, silicon etching can be achieved almost without sidewall passivation layers, allowing fine critical dimension control to be achieved. In addition, it is shown that although the O atom density is also smaller in the carbon-coated reactor, the selectivity toward ultrathin gate oxides is not reduced dramatically. Furthermore, during metal gate etching over high-k dielectric, the low level of parasitic oxygen in the carbon-coated reactor also allows one to minimize bulk silicon reoxidation through HfO{sub 2} high-k gate dielectric. It is then shown that the BCl{sub 3} etching process of the HfO{sub 2} high-k material is highly selective toward the substrate in the carbon-coated reactor, and the carbon-coating strategy thus allows minimizing the silicon recess of the active area of transistors. The authors eventually demonstrate that the carbon-coating strategy drastically reduces on-wafer metallic contamination. Finally, the consumption of carbon from the reactor during the etching process is discussed (and thus the amount of initial deposit that is required to protect the reactor walls) together with the best way of cleaning the reactor after a silicon etching process.

  16. Stable fixed points in the Kuramoto model

    E-Print Network [OSTI]

    Richard Taylor

    2010-10-05T23:59:59.000Z

    We develop a necessary condition for the existence of stable fixed points for the general network Kuramoto model, and use it to show that for the complete network the homogeneous model has no non-zero stable fixed point solution. This result provides further evidence that in the homogeneous case the zero fixed point has an attractor set consisting of the entire space minus a set of measure zero, a conjecture of Verwoerd and Mason (2007).

  17. Rehab permits desert line to run at original pressures

    SciTech Connect (OSTI)

    Kurdi, A.M.; Abougfeefa, M.S. (Agip Oil Co. Ltd., Tripoli (Libyan Arab Jamahiriya)); Denney, A.K. (John Brown Engineering and Constructors Ltd., London (United Kingdom))

    1993-07-26T23:59:59.000Z

    An extensive inspection and rehabilitation program on a 34-in. desert pipeline in gas-condensate service has restored the line to full operating pressures and ensured the line's active service life for at least 20 years. Since Agip Oil Co. Ltd. built the 133-km pipeline in 1972 using API 5L Grade X-60, it has suffered six known failures. There has been no single cause of the failures. As a consequence of the failures, the line has been progressively down rated from the original operating pressure of 700 psig to 500 psig. So that the line could again be operated between 650 and 700 psig, two options have been considered: extensive study and investigation leading to inspection and replacement of suspect pipe: total replacement of the line. These options were evaluated from economic and safety points of view. A major consideration was that the line will be operating in its current manner for only the next 2 years before changing to dry-gas transportation. The first option was therefore considered viable. The paper discusses the failure mechanisms, the history of hydrogen-induced cracking, the 1989 failure, survey results, calculation of acceptable pressures, and the rehabilitation program.

  18. Wolf Point Substation, Roosevelt County, Montana

    SciTech Connect (OSTI)

    Not Available

    1991-05-01T23:59:59.000Z

    The Western Area Power Administration (Western), an agency of the United States Department of Energy, is proposing to construct the 115-kV Wolf Point Substation near Wolf Point in Roosevelt County, Montana (Figure 1). As part of the construction project, Western's existing Wolf Point Substation would be taken out of service. The existing 115-kV Wolf Point Substation is located approximately 3 miles west of Wolf Point, Montana (Figure 2). The substation was constructed in 1949. The existing Wolf Point Substation serves as a Switching Station'' for the 115-kV transmission in the region. The need for substation improvements is based on operational and reliability issues. For this environmental assessment (EA), the environmental review of the proposed project took into account the removal of the old Wolf Point Substation, rerouting of the five Western lines and four lines from the Cooperatives and Montana-Dakota Utilities Company, and the new road into the proposed substation. Reference to the new proposed Wolf Point Substation in the EA includes these facilities as well as the old substation site. The environmental review looked at the impacts to all resource areas in the Wolf Point area. 7 refs., 6 figs.

  19. Building Green in Greensburg: Prairie Pointe Townhomes

    Office of Energy Efficiency and Renewable Energy (EERE)

    This poster highlights energy efficiency, renewable energy, and sustainable features of the high-performing Prairie Pointe Townhomes in Greensburg, Kansas.

  20. SIMPLE EXPLICIT FORMULA FOR COUNTING LATTICE POINTS ...

    E-Print Network [OSTI]

    2007-02-14T23:59:59.000Z

    by a simple formula involving the evaluation of ? zx over the integral points of those ... different) formula from a decomposition of the generating function into.