National Library of Energy BETA

Sample records for gates pressure point

  1. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  2. Magnetic roller gas gate employing transonic sweep gas flow to isolate regions of differing gaseous composition or pressure

    DOE Patents [OSTI]

    Doehler, Joachim

    1994-12-20

    Disclosed herein is an improved gas gate for interconnecting regions of differing gaseous composition and/or pressure. The gas gate includes a narrow, elongated passageway through which substrate material is adapted to move between said regions and inlet means for introducing a flow of non-contaminating sweep gas into a central portion of said passageway. The gas gate is characterized in that the height of the passageway and the flow rate of the sweep gas therethrough provides for transonic flow of the sweep gas between the inlet means and at least one of the two interconnected regions, thereby effectively isolating one region, characterized by one composition and pressure, from another region, having a differing composition and/or pressure, by decreasing the mean-free-path length between collisions of diffusing species within the transonic flow region. The gas gate preferably includes a manifold at the juncture point where the gas inlet means and the passageway interconnect.

  3. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  4. Floating-Point Units and Algorithms for field-programmable gate arrays

    Energy Science and Technology Software Center (OSTI)

    2005-11-01

    The software that we are attempting to copyright is a package of floating-point unit descriptions and example algorithm implementations using those units for use in FPGAs. The floating point units are best-in-class implementations of add, multiply, divide, and square root floating-point operations. The algorithm implementations are sample (not highly flexible) implementations of FFT, matrix multiply, matrix vector multiply, and dot product. Together, one could think of the collection as an implementation of parts of themore » BLAS library or something similar to the FFTW packages (without the flexibility) for FPGAs. Results from this work has been published multiple times and we are working on a publication to discuss the techniques we use to implement the floating-point units, For some more background, FPGAS are programmable hardware. "Programs" for this hardware are typically created using a hardware description language (examples include Verilog, VHDL, and JHDL). Our floating-point unit descriptions are written in JHDL, which allows them to include placement constraints that make them highly optimized relative to some other implementations of floating-point units. Many vendors (Nallatech from the UK, SRC Computers in the US) have similar implementations, but our implementations seem to be somewhat higher performance. Our algorithm implementations are written in VHDL and models of the floating-point units are provided in VHDL as well. FPGA "programs" make multiple "calls" (hardware instantiations) to libraries of intellectual property (IP), such as the floating-point unit library described here. These programs are then compiled using a tool called a synthesizer (such as a tool from Synplicity, Inc.). The compiled file is a netlist of gates and flip-flops. This netlist is then mapped to a particular type of FPGA by a mapper and then a place- and-route tool. These tools assign the gates in the netlist to specific locations on the specific type of FPGA chip used

  5. Radial-directed fluid-pressure-loaded all-metal-sealed gate valve

    DOE Patents [OSTI]

    Batzer, Thomas H.

    1992-01-01

    A large diameter gate valve uses a radially directed fluid pressure loaded all metal seal formed by engaging and disengaging a fixed and a moveable seal element. The fixed element is formed of a circular flange which contains a pressure chamber with a deformable wall, and is mounted to the valve body. The moving seal element contains an annular recess which mates with the circular flange, and is carried on a moveable sub-frame which moves on a frame fixed in the valve body. The valve opening defines an axis in a first direction, and the sub-frame moves through the valve body in a second direction which is substantially perpendicular to the first direction. The sub-frame and moveable seal element move in the second direction until the moveable element reaches a stop mounted in the valve body at which position the moveable element is aligned with but spaced apart from the fixed element. As the sub-frame continues to move in the second direction, the moveable element is forced to move toward and engage the fixed element. The pressure chamber in the flange is then pressurized to complete the seal.

  6. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

  7. Operating experience feedback report -- Pressure locking and thermal binding of gate valves. Commercial power reactors: Volume 9

    SciTech Connect (OSTI)

    Hsu, C.

    1993-03-01

    The potential for valve inoperability caused by pressure locking and thermal binding has been known for many years in the nuclear industry. Pressure locking or thermal binding is a common-mode failure mechanism that can prevent a gate valve from opening, and could render redundant trains of safety systems or multiple safety systems inoperable. In spite of numerous generic communications issued in the past by the Nuclear Regulatory Commission (NRC) and industry, pressure locking and thermal binding continues to occur to gate valves installed in safety-related systems of both boding water reactors (BWRs) and pressurized water reactors (PWRs). The generic communications to date have not led to effective industry action to fully identify, evaluate, and correct the problem. This report provides a review of operating events involving these failure mechanisms. As a result of this review this report: (1) identifies conditions when the failure mechanisms have occurred, (2) identifies the spectrum of safety systems that have been subjected to the failure mechanisms, and (3) identifies conditions that may introduce the failure mechanisms under both normal and accident conditions. On the basis of the evaluation of the operating events, the Office for Analysis and Evaluation of Operational Data (AEOD) of the NRC concludes that the binding problems with gate valves are an important safety issue that needs priority NRC and industry attention. This report also provides AEOD`s recommendation for actions to effectively prevent the occurrence of valve binding failures.

  8. Comparison of average and point capillary pressure-saturation functions determined by steady-state centrifugation

    SciTech Connect (OSTI)

    Cropper, Clark; Perfect, Edmund; van den Berg, Dr. Elmer; Mayes, Melanie

    2010-01-01

    The capillary pressure-saturation function can be determined from centrifuge drainage experiments. In soil physics, the data resulting from such experiments are usually analyzed by the 'averaging method.' In this approach, average relative saturation, , is expressed as a function of average capillary pressure, <{psi}>, i.e., (<{psi}>). In contrast, the capillary pressure-saturation function at a physical point, i.e., S({psi}), has been extracted from similar experiments in petrophysics using the 'integral method.' The purpose of this study was to introduce the integral method applied to centrifuge experiments to a soil physics audience and to compare S({psi}) and (<{psi}>) functions, as parameterized by the Brooks-Corey and van Genuchten equations, for 18 samples drawn from a range of porous media (i.e., Berea sandstone, glass beads, and Hanford sediments). Steady-state centrifuge experiments were performed on preconsolidated samples with a URC-628 Ultra-Rock Core centrifuge. The angular velocity and outflow data sets were then analyzed using both the averaging and integral methods. The results show that the averaging method smoothes out the drainage process, yielding less steep capillary pressure-saturation functions relative to the corresponding point-based curves. Maximum deviations in saturation between the two methods ranged from 0.08 to 0.28 and generally occurred at low suctions. These discrepancies can lead to inaccurate predictions of other hydraulic properties such as the relative permeability function. Therefore, we strongly recommend use of the integral method instead of the averaging method when determining the capillary pressure-saturation function by steady-state centrifugation. This method can be successfully implemented using either the van Genuchten or Brooks-Corey functions, although the latter provides a more physically precise description of air entry at a physical point.

  9. High-Pressure Micellar Solutions of Polystyrene-block-Polybutadiene and Polystyrene-block-Polyisoprene Solutions in Propane Exhibit Cloud-Pressure Reduction and Distinct Micellization End Points

    SciTech Connect (OSTI)

    Winoto, Winoto; Radosz, Maciej; Tan, Sugata; Hong, Kunlun; Mays, Jimmy

    2009-01-01

    Micellar solutions of polystyrene-block-polybutadiene and polystyrene-block-polyisoprene in propane are found to exhibit significantly lower cloud pressures than the corresponding hypothetical non-micellar solutions. Such a cloud-pressure reduction indicates the extent to which micelle formation enhances the apparent diblock solubility in near-critical and hence compressible propane. Pressure-temperature points beyond which no micelles can be formed, referred to as the micellization end points, are found to depend on the block type, size and ratio, and on the polymer concentration. For a given pressure, the micellization end-point temperature corresponds to the "critical micelle temperature." The cloud-pressure reduction and the micellization end point measured for styrene-diene diblocks in propane should be characteristic of all amphiphilic diblock copolymer solutions that form micelles in compressible solvents.

  10. Double-disc gate valve

    DOE Patents [OSTI]

    Wheatley, Seth J.

    1979-01-01

    This invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewtih, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separtion of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve.

  11. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gate Access Gate Access Print When you first arrive at the ALS, gate clearance will have been arranged for you by the User Office. Berkeley Lab employees and visiting researchers (participating guests) may arrange for gate clearance for their visitors through the Lab's Site Access Office . Please notify the Site Office by submitting a Visitor Pass Request before 3:00 p.m. on the day before the expected visit. Include the name(s) of any visitors, the time you expect them, and your name and

  12. CNEEC - Electrolyte Gating by David Goldhaber-Gordon

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Electrolyte Gating

  13. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    SciTech Connect (OSTI)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-04-15

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  14. Stage Gate Management Guide

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Stage Gate Management in the Biomass Program February 2005 Revision 2 2 TABLE OF CONTENTS OVERVIEW............................................................................................................................. 4 STAGE GATE MANAGEMENT .................................................................................................... 4 STAGE GATE PROCESS AND LONG RANGE STRATEGIC PROGRAM PLANNING ........................ 5 GATE REVIEWS

  15. Sliding-gate valve for use with abrasive materials

    DOE Patents [OSTI]

    Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

    1985-01-01

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  16. Compact gate valve

    DOE Patents [OSTI]

    Bobo, Gerald E.

    1977-01-01

    This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

  17. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, Joseph; Williams, Carl W.

    1988-01-01

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  18. Locking apparatus for gate valves

    DOE Patents [OSTI]

    Fabyan, J.; Williams, C.W.

    A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing further movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

  19. Influence of viscous deformation at the contact point of primary particles on compaction of alkoxide-derived fine SiO{sub 2} granules under ultrahigh isostatic pressure

    SciTech Connect (OSTI)

    Kamiya, Hidehiro; Suzuki, Hisao; Kato, Daisuke; Jimbo, Genji

    1996-09-01

    Viscous deformation and the adhesion force at the contact point between amorphous silica particles under ultrahigh isostatic pressure (up to 1 GPa) are important in the densification of powder compacts. The amount of viscous deformation and the strength of adhesion force have been changed in the present study by altering the calcination temperature and particle diameter, and the new values have been determined successfully using a diametral compression test. The diameter of spherical and monosized alkoxide-derived silica powders has been controlled within the range of 10--400 nm. Close-packed granules of these powders have been produced by spray drying. Because of viscous deformation, as-spray-died ultrafine silica powders without calcination could be consolidated into highly dense compacts (>74% of theoretical density) by applying ultra-high isostatic pressure (1 GPa). Relatively high temperature in the calcined particles (>400 C) causes viscous deformation at the contact point to disappear almost completely and clearly increases the adhesion force, because of neck growth that has resulted from viscous sintering. At temperatures >200 C, the green density of the calcined powders decreases to 65% of theoretical density, even under 1 GPa pressure. The relationship between green density and viscous deformation in silica particles at the point of contact has been analyzed quantitatively by the Hertz and Rumpf model. The relationship between granule strength and neck growth at the contact point with calcination has been estimated Quantitatively.

  20. Oxygen self-diffusion in ThO2 under pressure: Connecting point defect parameters with bulk properties

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Cooper, Michael William D.; Fitzpatrick, M. E.; Tsoukalas, L. H.; Chroneos, A.

    2016-06-06

    ThO2 is a candidate material for use in nuclear fuel applications and as such it is important to investigate its materials properties over a range of temperatures and pressures. In the present study molecular dynamics calculations are used to calculate elastic and expansivity data. These are used in the framework of a thermodynamic model, the cBΩ model, to calculate the oxygen self-diffusion coefficient in ThO2 over a range of pressures (–10–10 GPa) and temperatures (300–1900 K). As a result, increasing the hydrostatic pressure leads to a significant reduction in oxygen self-diffusion. Conversely, negative hydrostatic pressure significantly enhances oxygen self-diffusion.

  1. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A.; Burger, Arnold; Mandal, Krishna C.

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  2. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  3. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, Christopher L.; Idzorek, George C.; Atencio, Leroy G.

    1987-01-01

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  4. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  5. Sliding-gate valve

    DOE Patents [OSTI]

    Usnick, George B.; Ward, Gene T.; Blair, Henry O.; Roberts, James W.; Warner, Terry N.

    1979-01-01

    This invention is a novel valve of the slidable-gate type. The valve is designed especially for long-term use with highly abrasive slurries. The sealing surfaces of the gate are shielded by the valve seats when the valve is fully open or closed, and the gate-to-seat clearance is swept with an inflowing purge gas while the gate is in transit. A preferred form of the valve includes an annular valve body containing an annular seat assembly defining a flow channel. The seat assembly comprises a first seat ring which is slidably and sealably mounted in the body, and a second seat ring which is tightly fitted in the body. These rings cooperatively define an annular gap which, together with passages in the valve body, forms a guideway extending normal to the channel. A plate-type gate is mounted for reciprocation in the guideway between positions where a portion of the plate closes the channel and where a circular aperture in the gate is in register with the channel. The valve casing includes opposed chambers which extend outwardly from the body along the axis of the guideway to accommodate the end portions of the gate. The chambers are sealed from atmosphere; when the gate is in transit, purge gas is admitted to the chambers and flows inwardly through the gate-to-seat-ring, clearance, minimizing buildup of process solids therein. A shaft reciprocated by an external actuator extends into one of the sealed chambers through a shaft seal and is coupled to an end of the gate. Means are provided for adjusting the clearance between the first seat ring and the gate while the valve is in service.

  6. Optical NAND gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Raring, James; Tauke-Pedretti, Anna

    2011-08-09

    An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  7. Optical NOR gate

    DOE Patents [OSTI]

    Skogen, Erik J.; Tauke-Pedretti, Anna

    2011-09-06

    An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  8. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  9. SU-E-T-350: Verification of Gating Performance of a New Elekta Gating Solution: Response Kit and Catalyst System

    SciTech Connect (OSTI)

    Xie, X; Cao, D; Housley, D; Mehta, V; Shepard, D

    2014-06-01

    Purpose: In this work, we have tested the performance of new respiratory gating solutions for Elekta linacs. These solutions include the Response gating and the C-RAD Catalyst surface mapping system.Verification measurements have been performed for a series of clinical cases. We also examined the beam on latency of the system and its impact on delivery efficiency. Methods: To verify the benefits of tighter gating windows, a Quasar Respiratory Motion Platform was used. Its vertical-motion plate acted as a respiration surrogate and was tracked by the Catalyst system to generate gating signals. A MatriXX ion-chamber array was mounted on its longitudinal-moving platform. Clinical plans are delivered to a stationary and moving Matrix array at 100%, 50% and 30% gating windows and gamma scores were calculated comparing moving delivery results to the stationary result. It is important to note that as one moves to tighter gating windows, the delivery efficiency will be impacted by the linac's beam-on latency. Using a specialized software package, we generated beam-on signals of lengths of 1000ms, 600ms, 450ms, 400ms, 350ms and 300ms. As the gating windows get tighter, one can expect to reach a point where the dose rate will fall to nearly zero, indicating that the gating window is close to beam-on latency. A clinically useful gating window needs to be significantly longer than the latency for the linac. Results: As expected, the use of tighter gating windows improved delivery accuracy. However, a lower limit of the gating window, largely defined by linac beam-on latency, exists at around 300ms. Conclusion: The Response gating kit, combined with the C-RAD Catalyst, provides an effective solution for respiratorygated treatment delivery. Careful patient selection, gating window design, even visual/audio coaching may be necessary to ensure both delivery quality and efficiency. This research project is funded by Elekta.

  10. Gated IR Images of Shocked Surfaces

    SciTech Connect (OSTI)

    S. S. Lutz; W. D. Turley; P. M. Rightley; L. E. Primas

    2001-06-01

    Gated infrared (IR) images have been taken of a series of shocked surface geometries in tin. Metal coupons machined with steps and flats were mounted directly to the high explosive. The explosive was point-initiated and 500-ns to 1-microsecond-wide gated images of the target were taken immediately following shock breakout using a Santa Barbara Focalplane InSb camera (SBF-134). Spatial distributions of surface radiance were extracted from the images of the shocked samples and found to be non-single-valued. Several geometries were modeled using CTH, a two-dimensional Eulerian hydrocode.

  11. Microsoft PowerPoint - SW HydropowerCouncil-060910.pptx

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    US Army Corps of Engineers BUILDING STRONG AGENDA * Budgets and Appropriations Trends * ... (SecDef Gates, 8 May 2010) External Trends To Watch * Continuing Pressure on Budget ...

  12. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans; West, Shawn Michael; Fabean, Robert J.

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  13. Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

    SciTech Connect (OSTI)

    Wang, Yang; Chen, Xiaolong; Ye, Weiguang; Wu, Zefei; Han, Yu; Han, Tianyi; He, Yuheng; Cai, Yuan; Wang, Ning

    2014-12-15

    High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.

  14. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Looking at Transistor Gate Oxide Formation in Real Time Print Wednesday, 25 June 2008 00:00 The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under

  15. ONE SHAKE GATE FORMER

    DOE Patents [OSTI]

    Kalibjian, R.; Perez-Mendez, V.

    1957-08-20

    An improved circuit for forming square pulses having substantially short and precise durations is described. The gate forming circuit incorporates a secondary emission R. F. pentode adapted to receive input trigger pulses amd having a positive feedback loop comnected from the dynode to the control grid to maintain conduction in response to trigger pulses. A short circuited pulse delay line is employed to precisely control the conducting time of the tube and a circuit for squelching spurious oscillations is provided in the feedback loop.

  16. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  17. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    personnel contactdirectory (SLAC phone directory) assistance, and directions and maps. ... Satellite view | Aerial view detail Gate 17 Sector 30 Gate 247 proximity access for ...

  18. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  19. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  20. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  1. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  2. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  3. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  4. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained

  5. FLUID PRESSURE AND CAM OPERATED VACUUM VALVE

    DOE Patents [OSTI]

    Batzer, T.H.

    1963-11-26

    An ultra-high vacuum valve that is bakable, reusable, and capable of being quickly opened and closed is described. A translationally movable valve gate having an annular ridge is adapted to contact an annular soft metal gasket disposed at the valve seat such that the soft metal gasket extends beyond the annular ridge on all sides. The valve gate is closed, by first laterally aligning the valve gate with the valve seat and then bringing the valve gate and valve seat into seating contact by the translational movement of a ramp-like wedging means that engages similar ramp-like stractures at the base of the valve gate to force the valve gate into essentially pressureless contact with the annular soft metal gasket. This gasket is then pressurized from beneath by a fluid thereby effecting a vacuura tight seal between the gasket and the ridge. (AEC)

  6. Gate Solar | Open Energy Information

    Open Energy Info (EERE)

    Spain Sector: Solar Product: JV set up for the promotion, exploitation and sale of photovoltaic solar power plants. References: Gate Solar1 This article is a stub. You can help...

  7. Latest design of gate valves

    SciTech Connect (OSTI)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  8. ARM - Lesson Plans: Air Pressure

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Teachers' Toolbox Lesson Plans Lesson Plans: Air Pressure Objective The objective of this ... Important Points to Understand Air has weight and exerts pressure on everything with which ...

  9. Stage-Gate Innovation Management Guidelines

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Program Stage-Gate Innovation Management Guidelines Managing risk through structured project decision-making February 2007 Version 1.3 Table of Contents Overview of ITP Stage-Gate Innovation Management........................................................ 1 Background............................................................................................................................................. 1 Process

  10. Radial gate evaluation: Olympus Dam, Colorado

    SciTech Connect (OSTI)

    1997-06-01

    The report presents a structural analysis of the radial gates of Olympus Dam in eastern Colorado. Five 20-foot wide by 17-foot high radial gates are used to control flow through the spillway at Olympus Dam. The spillway gates were designed in 1947. The gate arm assemblies consist of two separate wide flange beams, with a single brace between the arms. The arms pivot about a 4.0-inch diameter pin and bronze graphite-insert bushing. The pin is cantilevered from the pier anchor girder. The radial gates are supported by a pin bearing on a pier anchor birder bolted to the end of the concrete pier. The gates are operated by two-part wire rope 15,000-pound capacity hoise. Stoplog slots upstream of the radial gates are provided in the concrete piers. Selected drawings of the gates and hoists are located in appendix A.

  11. Graduate Automotive Technology Education (GATE) Initiative Awards |

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Department of Energy Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research

  12. Gate valve and motor-operator research findings

    SciTech Connect (OSTI)

    Steele, R. Jr.; DeWall, K.G.; Watkins, J.C.; Russell, M.J.; Bramwell, D.

    1995-09-01

    This report provides an update on the valve research being sponsored by the US Nuclear Regulatory Commission (NRC) and conducted at the Idaho National Engineering Laboratory (INEL). The research addresses the need to provide assurance that motor-operated valves can perform their intended safety function, usually to open or close against specified (design basis) flow and pressure loads. This report describes several important developments: Two methods for estimating or bounding the design basis stem factor (in rising-stem valves), using data from tests less severe than design basis tests; a new correlation for evaluating the opening responses of gate valves and for predicting opening requirements; an extrapolation method that uses the results of a best effort flow test to estimate the design basis closing requirements of a gate valve that exhibits atypical responses (peak force occurs before flow isolation); and the extension of the original INEL closing correlation to include low- flow and low-pressure loads. The report also includes a general approach, presented in step-by-step format, for determining operating margins for rising-stem valves (gate valves and globe valves) as well as quarter-turn valves (ball valves and butterfly valves).

  13. Talking Points

    U.S. Energy Information Administration (EIA) Indexed Site

    Talking Points NATURAL GAS MARKET INTEGRITY: How EIA Helps Presentation by William F. Hederman Congressional Research Service at EIA 30 th Anniversary Conference April 8, 2008 ...

  14. Gating of the proton-gated ion channel from Gloeobacter violaceus...

    Office of Scientific and Technical Information (OSTI)

    Title: Gating of the proton-gated ion channel from Gloeobacter violaceus at pH 4 as revealed by X-ray crystallography Authors: Gonzalez-Gutierrez, Giovanni ; Cuello, Luis G. ; ...

  15. David A Gates | Princeton Plasma Physics Lab

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Physicist, Stellerator Physics Lead, Advanced Projects Division, Science Focus Group Leader for Macroscopic Stability David Gates is a principal research physicist for the...

  16. Optimization efforts in gated x-ray intensifiers (Conference...

    Office of Scientific and Technical Information (OSTI)

    Optimization efforts in gated x-ray intensifiers Citation Details In-Document Search Title: Optimization efforts in gated x-ray intensifiers Gated x-ray intensifiers are often ...

  17. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgstrm, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  18. Automatically closing swing gate closure assembly

    DOE Patents [OSTI]

    Chang, Shih-Chih; Schuck, William J.; Gilmore, Richard F.

    1988-01-01

    A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

  19. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, Arden R. (Idaho Falls, ID)

    1997-01-01

    A retaining latch for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

  20. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  1. Method for voltage-gated protein fractionation (Patent) | DOEPatents

    Office of Scientific and Technical Information (OSTI)

    Method for voltage-gated protein fractionation Title: Method for voltage-gated protein fractionation We report unique findings on the voltage dependence of protein exclusion from ...

  2. Unbalanced edge modes and topological phase transition in gated...

    Office of Scientific and Technical Information (OSTI)

    Unbalanced edge modes and topological phase transition in gated trilayer graphene Title: Unbalanced edge modes and topological phase transition in gated trilayer graphene Authors: ...

  3. Development of Dual-Gated Bilayer Graphene Device Structures...

    Office of Scientific and Technical Information (OSTI)

    Development of Dual-Gated Bilayer Graphene Device Structures. Citation Details In-Document Search Title: Development of Dual-Gated Bilayer Graphene Device Structures. Abstract not ...

  4. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and ...

  5. Repeat-until-success cubic phase gate for universal continuous...

    Office of Scientific and Technical Information (OSTI)

    phase gate for universal continuous-variable quantum computation Citation Details In-Document Search Title: Repeat-until-success cubic phase gate for universal ...

  6. AgraGate Carbon Credits Corporation | Open Energy Information

    Open Energy Info (EERE)

    AgraGate Carbon Credits Corporation Jump to: navigation, search Name: AgraGate Carbon Credits Corporation Place: Des Moines, Iowa Zip: 50266 Product: Offset aggregators that work...

  7. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion ...

  8. GATE Center of Excellence in Sustainable Vehicle Systems | Department...

    Broader source: Energy.gov (indexed) [DOE]

    More Documents & Publications GATE Center of Excellence in Sustainable Vehicle Systems Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable ...

  9. GATE: Energy Efficient Vehicles for Sustainable Mobility | Department...

    Broader source: Energy.gov (indexed) [DOE]

    GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle ...

  10. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    DOE PAGES Search Results Publisher's Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt ...

  11. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect (OSTI)

    Jeffrey Hodgson; David Irick

    2005-09-30

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  12. Digital gate pulse generator for cycloconverter control

    DOE Patents [OSTI]

    Klein, Frederick F.; Mutone, Gioacchino A.

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  13. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    is a stub. You can help OpenEI by expanding it. Gates is a city in Linn County and Marion County, Oregon. It falls under Oregon's 4th congressional district and Oregon's 5th...

  14. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  15. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,1117, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating thresholdthe pressure needed to open the porescan be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gasliquid sorting in a microfluidic flow and to separate a three-phase air wateroil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  16. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, X; Hu, YH; Grinthal, A; Khan, M; Aizenberg, J

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  17. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and foulingmore » is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

  18. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  19. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  20. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E.

    1996-01-01

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  1. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M.

    1991-01-01

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  2. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Gates 800,000 Stay Vane Repair, 3 Units (est)- 1.6 Million Additional Interior Painting ... Project Cost Breakdown 2013 Current Cost Est. - 72.7M Turbine Rehab Cont. - 55.3 ...

  3. Pressure Systems

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Engineering > Pressure Systems Privacy and Security Notice Skip over navigation Search the JLab Site Pressure Systems Please upgrade your browser. This site's design is only ...

  4. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davis's existing GATE centers have become the campus's research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  5. Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    SciTech Connect (OSTI)

    Witzel, Wayne M.; Montaño, Inès; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.

  6. Multiqubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Witzel, Wayne M.; Montaño, Inès; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this study, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. This system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Putting this all together, we present a robust universal gate set for quantum computation.« less

  7. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    SciTech Connect (OSTI)

    Witzel, Wayne; Montano, Ines; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interact with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.

  8. Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Witzel, Wayne; Montano, Ines; Muller, Richard P.; Carroll, Malcolm S.

    2015-08-19

    In this paper, we present a strategy for producing multiqubit gates that promise high fidelity with minimal tuning requirements. Our strategy combines gap protection from the adiabatic theorem with dynamical decoupling in a complementary manner. Energy-level transition errors are protected by adiabaticity and remaining phase errors are mitigated via dynamical decoupling. This is a powerful way to divide and conquer the various error channels. In order to accomplish this without violating a no-go theorem regarding black-box dynamically corrected gates [Phys. Rev. A 80, 032314 (2009)], we require a robust operating point (sweet spot) in control space where the qubits interactmore » with little sensitivity to noise. There are also energy gap requirements for effective adiabaticity. We apply our strategy to an architecture in Si with P donors where we assume we can shuttle electrons between different donors. Electron spins act as mobile ancillary qubits and P nuclear spins act as long-lived data qubits. Furthermore, this system can have a very robust operating point where the electron spin is bound to a donor in the quadratic Stark shift regime. High fidelity single qubit gates may be performed using well-established global magnetic resonance pulse sequences. Single electron-spin preparation and measurement has also been demonstrated. Thus, putting this all together, we present a robust universal gate set for quantum computation.« less

  9. Field programmable gate array-assigned complex-valued computation and its limits

    SciTech Connect (OSTI)

    Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Grschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

    2014-09-15

    We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

  10. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

  11. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is ... Now, for the first time, a group of researchers has obtained real-time oxidation results ...

  12. Chi-Nu "Gate Review" (Conference) | SciTech Connect

    Office of Scientific and Technical Information (OSTI)

    Chi-Nu "Gate Review" Citation Details In-Document Search Title: Chi-Nu "Gate Review" You are accessing a document from the Department of Energy's (DOE) SciTech Connect. This...

  13. Spectroscopy and capacitance measurements of tunneling resonances in an Sb-implanted point contact.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Rahman, Rajib; Ten Eyck, Gregory A.; Eng, Kevin; Carroll, Malcolm S.; Young, Ralph Watson; Lilly, Michael Patrick; Stalford, Harold Lenn; Bishop, Nathaniel; Bielejec, Edward Salvador

    2010-08-01

    We fabricated a split-gate defined point contact in a double gate enhancement mode Si-MOS device, and implanted Sb donor atoms using a self-aligned process. E-beam lithography in combination with a timed implant gives us excellent control over the placement of dopant atoms, and acts as a stepping stone to focused ion beam implantation of single donors. Our approach allows us considerable latitude in experimental design in-situ. We have identified two resonance conditions in the point contact conductance as a function of split gate voltage. Using tunneling spectroscopy, we probed their electronic structure as a function of temperature and magnetic field. We also determine the capacitive coupling between the resonant feature and several gates. Comparison between experimental values and extensive quasi-classical simulations constrain the location and energy of the resonant level. We discuss our results and how they may apply to resonant tunneling through a single donor.

  14. Designing robust unitary gates: Application to concatenated composite pulses

    SciTech Connect (OSTI)

    Ichikawa, Tsubasa; Bando, Masamitsu; Kondo, Yasushi; Nakahara, Mikio

    2011-12-15

    We propose a simple formalism to design unitary gates robust against given systematic errors. This formalism generalizes our previous observation [Y. Kondo and M. Bando, J. Phys. Soc. Jpn. 80, 054002 (2011)] that vanishing dynamical phase in some composite gates is essential to suppress pulse-length errors. By employing our formalism, we derive a composite unitary gate which can be seen as a concatenation of two known composite unitary operations. The obtained unitary gate has high fidelity over a wider range of error strengths compared to existing composite gates.

  15. Critical Point Finder

    Energy Science and Technology Software Center (OSTI)

    2007-03-15

    The program robustly finds the critical points in the electric field generated by a specified collection of point charges.

  16. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, Larry; Hopkins, Harvey S.

    1998-12-10

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse.

  17. Gated beam imager for heavy ion beams

    SciTech Connect (OSTI)

    Ahle, L.; Hopkins, H.S.

    1998-12-01

    As part of the work building a small heavy-ion induction accelerator ring, or recirculator, at Lawrence Livermore National Laboratory, a diagnostic device measuring the four-dimensional transverse phase space of the beam in just a single pulse has been developed. This device, the Gated Beam Imager (GBI), consists of a thin plate filled with an array of 100-micron diameter holes and uses a Micro Channel Plate (MCP), a phosphor screen, and a CCD camera to image the beam particles that pass through the holes after they have drifted for a short distance. By time gating the MCP, the time evolution of the beam can also be measured, with each time step requiring a new pulse. {copyright} {ital 1998 American Institute of Physics.}

  18. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson; Singh, Anup K.

    2012-04-24

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  19. Gated monochromatic x-ray imager

    SciTech Connect (OSTI)

    Oertel, J.A.; Archuleta, T.; Clark, L.

    1995-09-01

    We have recently developed a gated monochromatic x-ray imaging diagnostic for the national Inertial-Confinement Fusion (ICF) program. This new imaging system will be one of the primary diagnostics to be utilized on University of Rochester`s Omega laser fusion facility. The new diagnostic is based upon a Kirkpatrick-Baez (KB) microscope dispersed by diffraction crystals, as first described by Marshall and Su. The dispersed images are gated by four individual proximity focused microchannel plates and recorded on film. Spectral coverage is tunable up to 8 keV, spectral resolution has been measured at 20 eV, temporal resolution is 80 ps, and spatial resolution is better than 10 {mu}m.

  20. Cluster computing software for GATE simulations

    SciTech Connect (OSTI)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-06-15

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values.

  1. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    SAND2016-8237 M Configuration Self-Scrubber for Xilinx Virtex-5QV FPGAs The Xilinx Virtex-5QV is a field programmable gate array (FPGA) designed for use in space applications. Despite radiation hardening of this particular FPGA, single-event upsets still occasionally corrupt the configuration memory of the device, requiring the use of a "scrubber" to correct these upset bits. Though scrubbing has historically required a separate external device, Sandia Labs developed a

  2. Critical point analysis of phase envelope diagram

    SciTech Connect (OSTI)

    Soetikno, Darmadi; Siagian, Ucok W. R.; Kusdiantara, Rudy Puspita, Dila Sidarto, Kuntjoro A. Soewono, Edy; Gunawan, Agus Y.

    2014-03-24

    Phase diagram or phase envelope is a relation between temperature and pressure that shows the condition of equilibria between the different phases of chemical compounds, mixture of compounds, and solutions. Phase diagram is an important issue in chemical thermodynamics and hydrocarbon reservoir. It is very useful for process simulation, hydrocarbon reactor design, and petroleum engineering studies. It is constructed from the bubble line, dew line, and critical point. Bubble line and dew line are composed of bubble points and dew points, respectively. Bubble point is the first point at which the gas is formed when a liquid is heated. Meanwhile, dew point is the first point where the liquid is formed when the gas is cooled. Critical point is the point where all of the properties of gases and liquids are equal, such as temperature, pressure, amount of substance, and others. Critical point is very useful in fuel processing and dissolution of certain chemicals. Here in this paper, we will show the critical point analytically. Then, it will be compared with numerical calculations of Peng-Robinson equation by using Newton-Raphson method. As case studies, several hydrocarbon mixtures are simulated using by Matlab.

  3. ARM - Point Reyes News

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    CaliforniaPoint Reyes News Point Reyes Deployment AMF Home Point Reyes Home Data Plots and Baseline Instruments Experiment Planning MASRAD Proposal Abstract and Related Campaigns Outreach Posters Climate Research at Point Reyes National Seashore (horizontal) Climate Research at Point Reyes National Seashore (vertical) News Campaign Images Point Reyes News From Coastal Clouds to Desert Dust: ARM Mobile Facility Headed to Africa September 30, 2005 New Data Streams Available for ARM Mobile Facility

  4. GATE Center of Excellence in Lightweight Materials and Manufacturing

    Broader source: Energy.gov (indexed) [DOE]

    Technologies | Department of Energy 6_vaidya_2012_p.pdf (4.01 MB) More Documents & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence in Lightweight Materials and Manufacturing Technologies Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit

  5. Pressure sensor

    SciTech Connect (OSTI)

    Mee, David K.; Ripley, Edward B.; Nienstedt, Zachary C.; Nienstedt, Alex W.; Howell, Jr., Layton N.

    2015-09-29

    Disclosed is a passive, in-situ pressure sensor. The sensor includes a sensing element having a ferromagnetic metal and a tension inducing mechanism coupled to the ferromagnetic metal. The tension inducing mechanism is operable to change a tensile stress upon the ferromagnetic metal based on a change in pressure in the sensing element. Changes in pressure are detected based on changes in the magnetic switching characteristics of the ferromagnetic metal when subjected to an alternating magnetic field caused by the change in the tensile stress. The sensing element is embeddable in a closed system for detecting pressure changes without the need for any penetrations of the system for power or data acquisition by detecting changes in the magnetic switching characteristics of the ferromagnetic metal caused by the tensile stress.

  6. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers [EERE]

    PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah...

  7. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education ...

  8. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    D.C. PDF icon ape003tolbert2010p.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Wide Bandgap Materials Smart ...

  9. High Temperature, High Voltage Fully Integrated Gate Driver Circuit...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    -- Washington D.C. PDF icon ape03marlino.pdf More Documents & Publications High Temperature, High Voltage Fully Integrated Gate Driver Circuit Smart Integrated Power Module ...

  10. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review ... Presentation given by Oak Ridge National Laboratory at 2015 DOE Hydrogen and Fuel Cells ...

  11. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and ...

  12. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production Fertilizer use can cause environmental problems, ...

  13. Gates County, North Carolina: Energy Resources | Open Energy...

    Open Energy Info (EERE)

    Gates County, North Carolina: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 36.4202077, -76.6874701 Show Map Loading map......

  14. Stage Gate Review Guide for the Industrial Technologies Program

    Office of Energy Efficiency and Renewable Energy (EERE)

    Stage-Gate Innovation Management Guidelines: Managing Risk Through Structured Project Decision-Making, February 2007. From the Industrial Technologies Program (now the Advanced Manufacturing Office).

  15. GATE Center of Excellence in Lightweight Materials and Manufacturing...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Technologies Vehicle Technologies Office Merit Review 2014: GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit...

  16. Thermosensitive gating effect and selective gas adsorption in...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage Previous Next List Dan Zhao , Daqiang Yuan , Rajamani Krishna , Jasper M. van Baten and...

  17. GATE Global Alternative Energy Holding AG | Open Energy Information

    Open Energy Info (EERE)

    Energy Holding AG Place: Wrzburg, Bavaria, Germany Zip: 97080 Product: Germany-based biodiesel producer. References: GATE Global Alternative Energy Holding AG1 This article...

  18. Vehicle Technologies Office: Graduate Automotive Technology Education (GATE)

    Broader source: Energy.gov [DOE]

    DOE established the Graduate Automotive Technology Education (GATE) Centers of Excellence to provide future generations of engineers and scientists with knowledge and skills in advanced automotive...

  19. Pressure regulator

    DOE Patents [OSTI]

    Ebeling, Jr., Robert W.; Weaver, Robert B.

    1979-01-01

    The pressure within a pressurized flow reactor operated under harsh environmental conditions is controlled by establishing and maintaining a fluidized bed of uniformly sized granular material of selected density by passing the gas from the reactor upwardly therethrough at a rate sufficient to fluidize the bed and varying the height of the bed by adding granular material thereto or removing granular material therefrom to adjust the backpressure on the flow reactor.

  20. PRESSURE TRANSDUCER

    DOE Patents [OSTI]

    Sander, H.H.

    1959-10-01

    A pressure or mechanical force transducer particularly adaptable to miniature telemetering systems is described. Basically the device consists of a transistor located within a magnetic field adapted to change in response to mechanical force. The conduction characteristics of the transistor in turn vary proportionally with changes in the magnetic flux across the transistor such that the output (either frequency of amplitude) of the transistor circuit is proportional to mechanical force or pressure.

  1. Speed control system for an access gate

    SciTech Connect (OSTI)

    Bzorgi, Fariborz M.

    2012-03-20

    An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

  2. Floating Point Control Library

    Energy Science and Technology Software Center (OSTI)

    2007-08-02

    Floating Point Control is a Library that allows for the manipulation of floating point unit exception masking funtions control exceptions in both the Streaming "Single Instruction, Multiple Data" Extension 2 (SSE2) unit and the floating point unit simultaneously. FPC also provides macros to set floating point rounding and precision control.

  3. AUTOMATIC CALIBRATING SYSTEM FOR PRESSURE TRANSDUCERS

    DOE Patents [OSTI]

    Amonette, E.L.; Rodgers, G.W.

    1958-01-01

    An automatic system for calibrating a number of pressure transducers is described. The disclosed embodiment of the invention uses a mercurial manometer to measure the air pressure applied to the transducer. A servo system follows the top of the mercury column as the pressure is changed and operates an analog- to-digital converter This converter furnishes electrical pulses, each representing an increment of pressure change, to a reversible counterThe transducer furnishes a signal at each calibration point, causing an electric typewriter and a card-punch machine to record the pressure at the instant as indicated by the counter. Another counter keeps track of the calibration points so that a number identifying each point is recorded with the corresponding pressure. A special relay control system controls the pressure trend and programs the sequential calibration of several transducers.

  4. Modeling gated neutron images of THD capsules

    SciTech Connect (OSTI)

    Wilson, Douglas Carl; Grim, Gary P; Tregillis, Ian L; Wilke, Mark D; Morgan, George L; Loomis, Eric N; Wilde, Carl H; Oertel, John A; Fatherley, Valerie E; Clark, David D; Schmitt, Mark J; Merrill, Frank E; Wang, Tai - Sen F; Danly, Christopher R; Batha, Steven H; Patel, M; Sepke, S; Hatarik, R; Fittinghoff, D; Bower, D; Marinak, M; Munro, D; Moran, M; Hilko, R; Frank, M; Buckles, R

    2010-01-01

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  5. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion ...

  6. End Points Specification Methods

    Office of Energy Efficiency and Renewable Energy (EERE)

    Two methods to develop end point specifications are presented. These have evolved from use in the field for deactivation projects.

  7. PowerPoint Presentation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    ... Surface Package Downhole Tool & Anchor Fiber + Coiled Tubing Coiled Tubing Unit Mobile Crane Electrical Slip Ring Rotating Pressure Joint Anchor Centralizer Proof of Concept ...

  8. Pressure transducer

    DOE Patents [OSTI]

    Anderson, T.T.; Roop, C.J.; Schmidt, K.J.; Gunchin, E.R.

    1987-02-13

    A pressure transducer suitable for use in high temperature environments includes two pairs of induction coils, each pair being bifilarly wound together, and each pair of coils connected as opposite arms of a four arm circuit; an electrically conductive target moveably positioned between the coil pairs and connected to a diaphragm such that deflection of the diaphragm causes axial movement of the target and an unbalance in the bridge output. 7 figs.

  9. Pressure transducer

    DOE Patents [OSTI]

    Anderson, Thomas T.; Roop, Conard J.; Schmidt, Kenneth J.; Gunchin, Elmer R.

    1989-01-01

    A pressure transducer suitable for use in high temperature environments includes two pairs of induction coils, each pair being bifilarly wound together, and each pair of coils connected as opposite arms of a four arm circuit; an electrically conductive target moveably positioned between the coil pairs and connected to a diaphragm such that deflection of the diaphragm causes axial movement of the target and an unbalance in the bridge output.

  10. Stage Gate Review Guide for the Biomass Program | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Biomass Program Stage Gate Review Guide for the Biomass Program Stage Gate Management in the Biomass Program (now the Bioenergy Technologies Office), a document from February 2005. Stage Gate Review Guide (282.61 KB) More Documents & Publications Stage Gate Review Guide for the Industrial Technologies Program 2009 Biochemical Conversion Platform Review Report 2009 Thermochemical Conversion Platform Review Report

  11. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    disease biomarkers in human biological samples * Point-of-Care diagnostics amenable to health clinics and field sensing applications * Integrated miniaturized electronics, optical...

  12. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    optic links will replace many hardwire connections - Remotely programmable set-points and monitoring for each klystron cart - Klystron collector over-temperature protection will...

  13. Gating of Permanent Molds for ALuminum Casting (Technical Report...

    Office of Scientific and Technical Information (OSTI)

    problems caused by improper gating are entrained aluminum oxide films and entrapped gas. ... Publication Date: 2004-03-30 OSTI Identifier: 822451 DOE Contract Number: FC36-01ID13983 ...

  14. Liquid-based gating mechanism with tunable multiphase selectivity...

    Office of Scientific and Technical Information (OSTI)

    uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open ...

  15. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Journal Article: Ultrafast terahertz gating of the polarization and giant nonlinear optical response in BiFeO3 thin films Citation Details In-Document Search Title: Ultrafast ...

  16. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    0.40 - 4.0 0.3% Moderator Water at 283 K Sample environments 4 -750 K, closed cycle refrigerator with He exchange gas, heating stick, high pressure cell Sample size...

  17. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    | Department of Energy PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and Vehicle Technologies Program Annual Merit Review and Peer Evaluation Meeting, May 18-22, 2009 -- Washington D.C. ti_01_anstrom.pdf (1.33 MB) More Documents & Publications IN-VEHICLE, HIGH-POWER ENERGY STORAGE SYSTEMS Vehicle Technologies Office Merit Review 2015: Penn State DOE Graduate

  18. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, X.

    1996-12-17

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

  19. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, Xucheng

    1996-01-01

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

  20. Final Technical GATE Report, 1998-2006

    SciTech Connect (OSTI)

    GATE Fuel Cell Vehicle Center

    2006-09-30

    In 1998, the U.S. Department of Energy (DOE) funded 10 proposals to establish graduate automotive technology education (GATE) centers of excellence at nine universities, each addressing a specific technological area. The University of California, Davis was chosen for two centers: Fuel Cell Center and Hybrid-Electric Vehicle Design Center (power drivetrains and control strategies). This report is specific to the Fuel Cell Center only, which was housed at the UC Davis Institute of Transportation Studies (ITS-Davis). ITS-Davis created the Fuel Cell Vehicle Center, with the following goals: (1) create an interdisciplinary fuel cell vehicle curriculum that cuts across engineering, the physical sciences and, to a lesser extent, the social sciences; (2) expand and strengthen the then-emerging multidisciplinary fuel cell vehicle research program; (3) strengthen links with industry; (4) create an active public outreach program; and (5) serve as neutral ground for interactions between academia, the auto, energy, and technology industries, government, and public-interest non-governmental organizations. At the time of proposal, the Center had a solid track record in fuel cell research, strong connections with industry, strong campus support, a core group of distinguished and motivated faculty, and an established institutional foundation for fuel cell vehicle research and education.

  1. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  2. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna (10), so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive (24) and transmit cavities (22) by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling.

  3. Rapidly reconfigurable all-optical universal logic gate

    DOE Patents [OSTI]

    Goddard, Lynford L.; Bond, Tiziana C.; Kallman, Jeffrey S.

    2010-09-07

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  4. Innovative secondary support systems for gate roads

    SciTech Connect (OSTI)

    Barczak, T.; Molinda, G.M.; Zelanko, J.C.

    1996-12-31

    With the development of the shield support, the primary requirement for successful ground control in longwall mining is to provide stable gate road and bleeder entries. Wood cribbing has been the dominant form of secondary and supplemental support. However, the cost and limited availability of timber, along with the poor performance of softwood crib supports, has forced western U.S. mines to explore the utilization of support systems other than conventional wood cribbing. The recent success of cable bolts has engendered much interest from western operators. Eastern U.S. coal operators are also now experimenting with various intrinsic and freestanding alternative support systems that provide effective ground control while reducing material handling costs and injuries. These innovative freestanding support systems include (1) {open_quotes}The Can{close_quotes} support by Burrell Mining Products International, Inc., (2) Hercules and Link-N-Lock wood cribs and Propsetter supports by Strata Products (USA) Inc., (3) Variable Yielding Crib and Power Crib supports by Mountainland Support Systems, (4) the Confined Core Crib developed by Southern Utah Fuels Corporation; and (5) the MEGA prop by MBK Hydraulik. This paper assesses design considerations and compares the performance and application of these alternative secondary support systems. Support performance in the form of load-displacement behavior is compared to conventional wood cribbing. Much of the data was developed through full-scale tests conducted by the U.S. Bureau of Mines (USBM) at the Strategic Structures Testing Laboratory in the unique Mine Roof Simulator load frame at the Pittsburgh Research Center. A summary of current mine experience with these innovative supports is also documented.

  5. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Microneedles for medical point of care diagnostics and drug delivery Ronen Polsky Department of Biosensors and Nanomaterials February 25, 2015 Sandia MedTech Showcase Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND2015-1388C Brief Technology Overview Wearable Point of

  6. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Coupling Between Oceanic Upwelling and Cloud Coupling Between Oceanic Upwelling and Cloud - - Aerosol Properties Aerosol Properties at the AMF Point Reyes Site at the AMF Point Reyes Site Maureen Dunn , Mike Jensen , Pavlos Kollias , Mark Miller , Peter Daum Mary Jane Bartholomew , David Turner , Elisabeth Andrews and Anne Jefferson Introduction Ground based observations from the MASRAD, Pt. Reyes AMF July 1-Sept 15, 2005 indicate a relationship between coastal marine stratus cloud properties,

  7. Material Point Methods

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Material Point Methods and Multiphysics for Fracture and Multiphase Problems Joseph Teran, UCLA and Alice Koniges, LBL Contact: jteran@math.ucla.edu Material point methods (MPM) provide an intriguing new path for the design of algorithms that are poised to scale to billions of cores [4]. These methods are particularly important for simulating various phases in the presence of extreme deformation and topological change. This brings about the possibility of new simulations enabled at the exascale

  8. Points of Contact - Hanford Site

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Points of Contact About Us Hanford Site Solid Waste Acceptance Program What's New Acceptance Criteria Acceptance Process Tools Points of Contact Points of Contact Email Email Page...

  9. Deterministic and cascadable conditional phase gate for photonic qubits

    SciTech Connect (OSTI)

    Chudzicki, Christopher; Chuang, Isaac; Shapiro, Jeffrey H.

    2014-12-04

    Previous analyses of conditional ?{sub NL}-phase gates for photonic qubits that treat crossphase modulation (XPM) in a causal, multimode, quantum field setting suggest that a large (?? rad) nonlinear phase shift is always accompanied by fidelity-degrading noise [J. H. Shapiro, Phys. Rev. A 73, 062305 (2006); J. Gea-Banacloche, Phys. Rev. A 81, 043823 (2010)]. Using an atomic V-system to model an XPM medium, we present a conditional phase gate that, for sufficiently small nonzero ?{sub NL}, has high fidelity. The gate is made cascadable by using a special measurement, principal mode projection, to exploit the quantum Zeno effect and preclude the accumulation of fidelity-degrading departures from the principal-mode Hilbert space when both control and target photons illuminate the gate. The nonlinearity of the V-system we study is too weak for this particular implementation to be practical. Nevertheless, the idea of cascading through principal mode projection is of potential use to overcome fidelity degrading noise for a wide variety of nonlinear optical primitive gates.

  10. Effects of breathing variation on gating window internal target volume in respiratory gated radiation therapy

    SciTech Connect (OSTI)

    Cai Jing; McLawhorn, Robert; Read, Paul W.; Larner, James M.; Yin, Fang-fang; Benedict, Stanley H.; Sheng, Ke

    2010-08-15

    Purpose: To investigate the effects of breathing variation on gating window internal target volume (ITV{sub GW}) in respiratory gated radiation therapy. Method and Materials: Two-dimensional dynamic MRI (dMRI) of lung motion was acquired in ten volunteers and eight lung cancer patients. Resorted dMRI using 4DCT acquisition method (RedCAM) was generated for selected subjects by simulating the image rebinning process. A dynamic software generated phantom (dSGP) was created by moving a solid circle (to mimic the ''tumor'') with dMRI-determined motion trajectories. The gating window internal target area (ITA{sub GW}, 2D counterpart of ITV{sub GW}) was determined from both RedCAM and dSGP/dMRI. Its area (A), major axis (L1), minor axis (L2), and similarity (S) were calculated and compared. Results: In the phantom study of 3 cm tumor, measurements of the ITA{sub GW} from dSGP (A=10.0{+-}1.3 cm{sup 2}, L1=3.8{+-}0.4 cm, and L2=3.3{+-}0.1 cm) are significantly (p<0.001) greater than those from RedCAM (A=8.5{+-}0.7 cm{sup 2}, L1=3.5{+-}0.2 cm, and L2=3.1{+-}0.1 cm). Similarly, the differences are significantly greater (p<0.001) for the 1 cm tumor (A=1.9{+-}0.5 cm{sup 2}, L1=1.9{+-}0.4 cm, and L2=1.3{+-}0.1 cm in dSGP; A=1.3{+-}0.1 cm{sup 2}, L1=1.5{+-}0.2 cm, and L2=1.1{+-}0.1 cm in RedCAM). In patient studies, measurements of the ITA{sub GW} from dMRI (A=15.5{+-}8.2 cm{sup 2}, L1=5.0{+-}1.1 cm, and L2=3.8{+-}1.2 cm) are also significantly greater (p<0.05) than those from RedCAM (A=13.2{+-}8.5 cm{sup 2}, L1=4.3{+-}1.4 cm, and L2=3.7{+-}1.2 cm). Similarities were 0.9{+-}0.1, 0.8{+-}0.1, and 0.8{+-}0.1 in the 3 cm tumor phantom, 1 cm tumor phantom, and patient studies, respectively. Conclusion: ITV{sub GW} can be underestimated by 4DCT due to breathing variations. An additional margin may be needed to account for this potential error in generating a PTV{sub GW}. Cautions need to be taken when generating ITV{sub GW} from 4DCT in respiratory gated radiation therapy, especially

  11. System for pressure letdown of abrasive slurries

    DOE Patents [OSTI]

    Kasper, Stanley

    1991-01-01

    A system and method for releasing erosive slurries from containment at high pressure without subjecting valves to highly erosive slurry flow. The system includes a pressure letdown tank disposed below the high-pressure tank, the two tanks being connected by a valved line communicating the gas phases and a line having a valve and choke for a transfer of liquid into the letdown tank. The letdown tank has a valved gas vent and a valved outlet line for release of liquid. In operation, the gas transfer line is opened to equalize pressure between tanks so that a low level of liquid flow occurs. The letdown tank is then vented, creating a high-pressure differential between the tanks. At this point, flow between tanks is controlled by the choke. High-velocity, erosive flow through a high-pressure outlet valve is prevented by equalizing the start up pressure and thereafter limiting flow with the choke.

  12. Precision Pointing System Development

    SciTech Connect (OSTI)

    BUGOS, ROBERT M.

    2003-03-01

    The development of precision pointing systems has been underway in Sandia's Electronic Systems Center for over thirty years. Important areas of emphasis are synthetic aperture radars and optical reconnaissance systems. Most applications are in the aerospace arena, with host vehicles including rockets, satellites, and manned and unmanned aircraft. Systems have been used on defense-related missions throughout the world. Presently in development are pointing systems with accuracy goals in the nanoradian regime. Future activity will include efforts to dramatically reduce system size and weight through measures such as the incorporation of advanced materials and MEMS inertial sensors.

  13. Appendix B - Control Points

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    B B Control Points B.1 Injector Control Points Qty Type Device 2 Magnet Bend magnet - DL1 bend 9 Magnet Quad magnet 10 Magnet X-Y Corrector Pair 2 Magnet Solenoid 2 Magnet Spectrometer 1 RF Gun 2 RF Accelerating Structure 1 RF Transverse RF Structure 1 TIMING Timing/Trigger System 1 Laser Gun Laser 1 Laser Alignment Laser 13 DIAG BPM 4 DIAG Wire Scanner 11 DIAG Profile Monitor 3 DIAG Toroid 1 DIAG Transverse RF BL Monitor 3 DIAG Faraday Cup 1 DIAG Energy Collimator 1 DIAG Tune-up Dump 1 VAC

  14. Nonlinear transport in ionic liquid gated strontium titanate nanowires

    SciTech Connect (OSTI)

    Bretz-Sullivan, Terence M.; Goldman, A. M.

    2015-09-14

    Measurements of the current-voltage (I–V) characteristics of ionic liquid gated nanometer scale channels of strontium titanate have been carried out. At low gate voltages, the I–V characteristics exhibit a large voltage threshold for conduction and a nonlinear power law behavior at all temperatures measured. The source-drain current of these nanowires scales as a power law of the difference between the source-drain voltage and the threshold voltage. The scaling behavior of the I–V characteristic is reminiscent of collective electronic transport through an array of quantum dots. At large gate voltages, the narrow channel acts as a quasi-1D wire whose conductance follows Landauer's formula for multichannel transport.

  15. Ligand-gated Diffusion Across the Bacterial Outer Membrane

    SciTech Connect (OSTI)

    B Lepore; M Indic; H Pham; E Hearn; D Patel; B van den Berg

    2011-12-31

    Ligand-gated channels, in which a substrate transport pathway is formed as a result of the binding of a small-molecule chemical messenger, constitute a diverse class of membrane proteins with important functions in prokaryotic and eukaryotic organisms. Despite their widespread nature, no ligand-gated channels have yet been found within the outer membrane (OM) of Gram-negative bacteria. Here we show, using in vivo transport assays, intrinsic tryptophan fluorescence and X-ray crystallography, that high-affinity (submicromolar) substrate binding to the OM long-chain fatty acid transporter FadL from Escherichia coli causes conformational changes in the N terminus that open up a channel for substrate diffusion. The OM long-chain fatty acid transporter FadL from E. coli is a unique paradigm for OM diffusion-driven transport, in which ligand gating within a {beta}-barrel membrane protein is a prerequisite for channel formation.

  16. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Preparation and identification of the most promising MOFs for use as water adsorbent in various applications. Significance and Impact This work illustrates how porous MOFs can be designed for their use as water adsorbents, considering the most important parameters for applications such as thermal batteries or capture and release of atmospheric water. Research Details - To be used as water adsorbent, a porous solid must be able to swiftly take up water at well-defined relative pressure, have a

  17. MountPointAttributes

    Energy Science and Technology Software Center (OSTI)

    2001-06-16

    MountPointAttributes is a software component that provides client code with a technique to raise the local namespace of a file to a global namespace. Its abstractions and mechanisms allow the client code to gather global properties of a file and to use them in devising an effective storage access strategy on this file.

  18. EndPoints 2000

    Energy Science and Technology Software Center (OSTI)

    2009-08-13

    The application leads the user through a logical framework to determine the minimum effort and cost necessary to reach the desired end state for each space, system, and facility. Endpoints are used to plan the project work, track and manage the determination, management, verification, and closure of D&D endpoints, consistent with DOE End Point guidance documents.

  19. Radiation Hardening of Gated X-ray Imagers for the National Ignition...

    Office of Scientific and Technical Information (OSTI)

    Radiation Hardening of Gated X-ray Imagers for the National Ignition Facility Citation Details In-Document Search Title: Radiation Hardening of Gated X-ray Imagers for the National ...

  20. Electrolyte Gate-Controlled Kondo Effect in SrTiO3 (Journal Article...

    Office of Scientific and Technical Information (OSTI)

    Electrolyte Gate-Controlled Kondo Effect in SrTiO3 Prev Next Title: Electrolyte Gate-Controlled Kondo Effect in SrTiO3 Authors: Lee, Menyoung ; Williams, J. R. ; Zhang, Sipei ...

  1. Nanoscale pressure sensors realized from suspended graphene membrane devices

    SciTech Connect (OSTI)

    Aguilera-Servin, Juan; Miao, Tengfei; Bockrath, Marc

    2015-02-23

    We study the transport properties of graphene layers placed over ∼200 nm triangular holes via attached electrodes under applied pressure. We find that the injected current division between counter electrodes depends on pressure and can be used to realize a nanoscale pressure sensor. Estimating various potential contributions to the resistivity change of the deflected graphene membrane including piezoresistivity, changing gate capacitance, and the valley Hall effect due to the pressure-induced synthetic magnetic field, we find that the valley Hall effect yields the largest expected contribution to the longitudinal resistivity modulation for accessible device parameters. Such devices in the ballistic transport regime may enable the realization of tunable valley polarized electron sources.

  2. PowerPoint Presentation

    Broader source: Energy.gov (indexed) [DOE]

    John Nangle, National Renewable Energy Laboratory (NREL) Tribal Leader Forum, Phoenix, AZ - May 30 - 31, 2013 State Incentives and Project Impacts Main Points - Market Context * State Renewable Portfolio Standards (RPS) - What are they? - How can they help your project? - Potential gap means more market demand for RE projects Starting a Renewable Energy Project * What renewable resources exist? * What sites with resources do you own? * To whom will you sell the electricity? * How will federal

  3. PowerPoint Presentation

    U.S. Energy Information Administration (EIA) Indexed Site

    Utica Shale Update Scott Kell Assistant Chief, Division of Oil & Gas Resources Management Ohio Department of Natural Resources Horizontal Well Activity Activity Trends Agency Progress Emerging Issues Horizontal Well Permitting 0 200 400 600 800 1000 1200 1400 1600 '06 '07 '08 '09 '10 '11 '12 '13 '14 '15 Year Utica Permits Permits Issued Well Drilling Horizontal Well Drilling by Year: 2011 - 64 2012 - 135 2013 - 526 2014 - 764 Horizontal Rig Count Horizontal Utica - Point Pleasant Well

  4. Strategic Focus Points

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Focus Points June 2011 1. Establish the human capital and organizational foundation to create a high-performing organization. 2. Implement a cyber risk-management and incident response program that ensures effective security of Federal and M&O networks, provides appropriate flexibility, and meets legal requirements and OMB expectations. 3. Improve IT Services (EITS) into a best-in-class provider from both a technical and business perspective. 4. Implement and institutionalize a reformed,

  5. PowerPoint Presentation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    John Nangle, National Renewable Energy Laboratory (NREL) Tribal Leader Forum, Phoenix, AZ - May 30 - 31, 2013 State Incentives and Project Impacts Main Points - Market Context * State Renewable Portfolio Standards (RPS) - What are they? - How can they help your project? - Potential gap means more market demand for RE projects Starting a Renewable Energy Project * What renewable resources exist? * What sites with resources do you own? * To whom will you sell the electricity? * How will federal

  6. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Info (EERE)

    (Redirected from Fast Out of the Gate: How Developing Asian Countries can Prepare to Access International Green Growth Financing)...

  7. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge

    SciTech Connect (OSTI)

    Tuenge, J. R.

    2012-09-01

    GATEWAY program report on the technical feasibility of LED roadway lighting on the Golden Gate Bridge in San Francisco, CA.

  8. PowerPoint Presentation

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Presentation * CAES Aquifer Technology * Geological Framework of Iowa * Dallas Center Structure * Results of CAES Feasibility Simulation * ISEP CAES Development Plan How Does CAES Work? CAES Turbo-Machinery Operating Requirements Equipment Manufacturer Plant Size (MW) Min. Inlet Pressure (psi) Min. Flow Rate (lbs/MW/hr) Total Min. Flow Rate (lb/hr) Allison 15 200 9500 142,500 MAN Turbo 50 50 9500 475,000 Dresser Rand 134 830 9500 1,273,000 Alston 300 900 9500 2,850,000 Westinghouse (501D5) 350

  9. Controlled phase gate for solid-state charge-qubit architectures

    SciTech Connect (OSTI)

    Schirmer, S.G.; Oi, D.K.L.; Greentree, Andrew D.

    2005-01-01

    We describe a mechanism for realizing a controlled phase gate for solid-state charge qubits. By augmenting the positionally defined qubit with an auxiliary state, and changing the charge distribution in the three-dot system, we are able to effectively switch the Coulombic interaction, effecting an entangling gate. We consider two architectures, and numerically investigate their robustness to gate noise.

  10. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect (OSTI)

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  11. Temperature-controlled molecular depolarization gates in nuclear magnetic resonance

    SciTech Connect (OSTI)

    Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

    2008-02-27

    Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

  12. Optimal gate-width setting for passive neutrons multiplicity counting

    SciTech Connect (OSTI)

    Croft, Stephen; Evans, Louise G; Schear, Melissa A

    2010-01-01

    When setting up a passive neutron coincidence counter it is natural to ask what coincidence gate settings should be used to optimize the counting precision. If the gate width is too short then signal is lost and the precision is compromised because in a given period only a few coincidence events will be observed. On the other hand if the gate is too large the signal will be maximized but it will also be compromised by the high level of random pile-up or Accidental coincidence events which must be subtracted. In the case of shift register electronics connected to an assay chamber with an exponential dieaway profile operating in the regime where the Accidentals rate dominates the Reals coincidence rate but where dead-time is not a concern, simple arguments allow one to show that the relative precision on the net Reals rate is minimized when the coincidence gate is set to about 1.2 times the lie dieaway time of the system. In this work we show that making the same assumptions it is easy to show that the relative precision on the Triples rates is also at a minimum when the relative precision of the Doubles (or Reals) is at a minimum. Although the analysis is straightforward to our knowledge such a discussion has not been documented in the literature before. Actual measurement systems do not always behave in the ideal we choose to model them. Fortunately however the variation in the relative precision as a function of gate width is rather flat for traditional safeguards counters and so the performance is somewhat forgiving of the exact choice. The derivation further serves to delineate the important parameters which determine the relative counting precision of the Doubles and Triples rates under the regime considered. To illustrate the similarities and differences we consider the relative standard deviation that might be anticipated for a passive correlation count of an axial section of a spent nuclear fuel assembly under practically achievable conditions.

  13. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    RapiDx Victoria VanderNoot, Ph.D. February 25, 2015 Sandia MedTech Showcase Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND2015-1392C Brief Technology Overview - RapiDx Rapid, Automated Point-of-Care System (RapiDx) * Portable microfluidic in vitro diagnostic instrument

  14. PowerPoint Presentation

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Automated Prep of Nucleic Acids from Blood for Point-of-Care Applications Steven S. Branda Principal Member of Technical Staff February 25, 2015 Sandia MedTech Showcase Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND2015-1389C Technology Overview * Platform for automated

  15. Capital Point | Open Energy Information

    Open Energy Info (EERE)

    Point Jump to: navigation, search Name: Capital Point Place: Israel Sector: Services Product: General Financial & Legal Services ( Joint Venture Consortium ) References: Capital...

  16. SU-C-210-03: Impact of Breathing Irregularities On Gated Treatments

    SciTech Connect (OSTI)

    Schiuma, D; Arheit, M; Schmelzer, P; Scheib, S; Buchsbaum, T; Pemler, P

    2015-06-15

    Purpose: To evaluate the effect of breathing irregularities on target location in gated treatments using amplitude and phase gating. Methods: 111 breathing patterns acquired using RPM system were categorized based on period and amplitude STD as regular (STD period ≤ 0.5 s, STD amplitude ≤ 1.5 mm), medium (0.5 s < STD period ≤ 1 s, 1.5 mm < STD amplitude ≤ 3 mm) and irregular (STD period > 1 s, STD amplitude > 3 mm). One pattern representative of the average defined population was selected per category and corresponding target motion reproduced using Quasar Respiratory Motion Phantom. Phantom in motion underwent 4D-CT scan with phase reconstruction. Gated window was defined at end of exhale and DRRs reconstructed in treatment planning at 40% (beam on) and 60% phase (beam off). Target location uncertainty was assessed by comparing gated kV triggered images continuously acquired at beam on/off on a True Beam 2.0 with corresponding DRRs. Results: Average target uncertainty with amplitude gating was in [0.4 – 1.9] mm range for the different scenarios with maximum STD of 1.2 mm for the irregular pattern. Average target uncertainty with phase gating was [1.1 – 2.2] mm for regular and medium patterns, while it increased to [3.6 – 9.6] mm for the irregular pattern. Live gated motion was stable with amplitude gating, while increasing with phase gating for the irregular pattern. Treatment duration range was [68 – 160] s with amplitude and [70 – 74] s with phase gating. Conclusion: Breathing irregularities were found to affect gated treatments only when using phase gating. For regular and medium patterns no significant difference was found between the two gating strategies. Amplitude gating ensured stable gated motion within the different patterns, thus reducing intra-fraction target location variability for the irregular pattern and resulting in longer treatment duration.

  17. An improved gate valve for critical applications in nuclear power plants

    SciTech Connect (OSTI)

    Kalsi, M.S.; Alvarez, P.D.; Wang, J.K.; Somagyi, D.

    1996-12-01

    U.S. Nuclear Regulatory Commission Generic Letters 89-10 for motor-operated valves (MOVs) and 95-07 for all power-operated valves document in detail the problems related to the performance of the safety-related valves in nuclear power plants. The problems relate to lack of reliable operation under design basis conditions including higher than anticipated stem thrust, unpredictable valve behavior, damage to the valve internals under blowdown/high flow conditions, significant degradation of performance when cycled under AP and flow, thermal binding, and pressure locking. This paper describes an improved motor-operated flexible wedge gate valve design, the GE Sentinel Valve, which is the outcome of a comprehensive and systematic development effort undertaken to resolve the issues identified in the NRC Generic Letters 89-10 and 95-07. The new design provides a reliable, long-term, low maintenance cost solution to the nuclear power industry. One of the key features incorporated in the disc permits the disc flexibility to be varied independently of the disc thickness (pressure boundary) dictated by the ASME Section III Pressure Vessel & Piping Code stress criteria. This feature allows the desired flexibility to be incorporated in the disc, thus eliminating thermal binding problems. A matrix of analyses was performed using finite element and computational fluid dynamics approaches to optimize design for stresses, flexibility, leak-tightness, fluid flow, and thermal effects. The design of the entire product line was based upon a consistent set of analyses and design rules which permit scaling to different valve sizes and pressure classes within the product line. The valve meets all of the ASME Section III Code design criteria and the N-Stamp requirements. The performance of the valve was validated by performing extensive separate effects and plant in-situ tests. This paper summarizes the key design features, analyses, and test results.

  18. Littoral processes: US Coast Guard Station, Fort Point, San Francisco

    SciTech Connect (OSTI)

    Ecker, R.M.; Whelan, G.

    1983-10-01

    The US Coast Guard Station, Fort Point is located three-quarters of a nautical mile southeast of the Golden Gate Strait, the entrance to San Francisco Bay. The existing storm wave conditions at Fort Point Station pier make it extremely dangerous for the SAR crews to get on and off the Motor Life Boats at times requiring the vessels to be moored at the San Francisco Yacht Harbor about 1.5 miles east of the Fort Point Station. To mitigate these harsh working conditions the US Coast Guard is considering the feasibility of constructing suitable all-weather moorings for the three Motor Life Boats at the Fort Point Station to enable unimpeded SAR operations, to provide safe working conditions for Coast Guard small boat crews, and to improve small boat maintenance conditions at Fort Point Station. The purpose of this report is to identify, analyze and evaluate physical environmental factors that could affect all-weather moorings siting, configuration and entrance location, as well as potential post construction alterations to littoral conditions and processes. This report includes a description of the site, description of pertinent littoral processes, evaluation of how these processes could affect construction of all-weather moorings, and discussion of design considerations, as well as mitigation measures to minimize potential adverse effects to the physical environment. 19 references, 27 figures, 26 tables.

  19. Furnace Pressure Controllers

    Broader source: Energy.gov [DOE]

    This tip sheet highlights the benefits of precise furnace pressure control in process heating systems.

  20. A Compact Reactor Gate Discharge Monitor for Spent Fuel.

    SciTech Connect (OSTI)

    Franco, J. B.; Menlove, Howard O.; Eccleston, G. W.; Miller, M. C.

    2005-01-01

    This paper presents a new design for a reactor gate discharge monitor that has evolved from the baseline discharge monitors used at the Fugen and Tokai-1 reactors in Japan. The main design innovation is the ability to determine direction-of-motion of spent fuel using a single sensor module, as opposed to the two modules used in both baseline design systems. Use of a single module reduces the final system complexity and weight significantly without compromising functionality. The reactor gate discharge monitor uses standard International Atomic Energy Agency (IAEA) hardware and software components. The requirements to determine direction-of-motion from a single module precipitated several development efforts described herein in both the MiniGRAND data acquisition hardware and in the uninterruptible power supply source.

  1. Quantum gate using qubit states separated by terahertz

    SciTech Connect (OSTI)

    Toyoda, Kenji; Urabe, Shinji [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan); Haze, Shinsuke [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Yamazaki, Rekishu [JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan)

    2010-03-15

    A two-qubit quantum gate is realized using electronically excited states in a single ion with an energy separation on the order of a terahertz times the Planck constant as a qubit. Two phase-locked lasers are used to excite a stimulated Raman transition between two metastable states D{sub 3/2} and D{sub 5/2} separated by 1.82 THz in a single trapped {sup 40}Ca{sup +} ion to construct a qubit, which is used as the target bit for the Cirac-Zoller two-qubit controlled NOT gate. Quantum dynamics conditioned on a motional qubit is clearly observed as a fringe reversal in Ramsey interferometry.

  2. Negative differential transconductance in electrolyte-gated ruthenate

    SciTech Connect (OSTI)

    Hassan, Muhammad Umair; Dhoot, Anoop Singh; Wimbush, Stuart C.

    2015-01-19

    We report on a study of electric field-induced doping of the highly conductive ruthenate SrRuO{sub 3} using an ionic liquid as the gate dielectric in a field-effect transistor configuration. Two distinct carrier transport regimes are identified for increasing positive gate voltage in thin (10 nm) films grown heteroepitaxially on SrTiO{sub 3} substrates. For V{sub g} = 2 V and lower, the sample shows an increased conductivity of up to 13%, as might be expected for electron doping of a metal. At higher V{sub g} = 2.5 V, we observe a large decrease in electrical conductivity of >20% (at 4.2 K) due to the prevalence of strongly blocked conduction pathways.

  3. Unitary-gate synthesis for continuous-variable systems

    SciTech Connect (OSTI)

    Fiurasek, Jaromir

    2003-08-01

    We investigate the synthesis of continuous-variable two-mode unitary gates in the setting where two modes A and B are coupled by a fixed quadratic Hamiltonian H. The gate synthesis consists of a sequence of evolutions governed by Hamiltonian H, which are interspaced by local phase shifts applied to A and B. We concentrate on protocols that require the minimum number of necessary steps and we show how to implement the beam splitter and the two-mode squeezer in just three steps. Particular attention is paid to Hamiltonian x{sub A}p{sub B} that describes the effective off-resonant interaction of light with the collective atomic spin.

  4. Amorphorized tantalum-nickel binary films for metal gate applications

    SciTech Connect (OSTI)

    Ouyang, Jiaomin; Wongpiya, Ranida; Clemens, Bruce M.; Deal, Michael D.; Nishi, Yoshio

    2015-04-13

    Amorphous metal gates have the potential to eliminate the work function variation due to grain orientation for poly-crystalline metal gate materials, which is a leading contributor to threshold voltage variation for small transistors. Structural and electrical properties of TaNi alloys using co-sputtering with different compositions and multilayer structures with different thicknesses are investigated in this work. It is found that TaNi films are amorphous for a wide range of compositions as deposited, and the films stay amorphous after annealing at 400?C in RTA for 1?min and up to at least 700?C depending on the composition. The amorphous films eventually crystallize into Ni, Ta, and TaNi{sub 3} phases at high enough temperature. For multilayer Ta/Ni structures, samples with individual layer thickness of 0.12?nm and 1.2?nm are amorphous as deposited due to intermixing during deposition, and stay amorphous until annealed at 500?C. The resistivity of the films as-deposited are around 200 ??cm. The work function of the alloy is fixed at close to the Ta work function of 4.6?eV for a wide range of compositions. This is attributed to the segregation of Ta at the metal-oxide interface, which is confirmed by XPS depth profile. Overall, the excellent thermal stability and low resistivity makes this alloy system a promising candidate for eliminating work function variation for gate last applications, as compared to crystalline Ta or TiN gates.

  5. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi E-mail: gennadi.bersuker@sematech.org

    2014-01-21

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  6. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    SciTech Connect (OSTI)

    Nelson, Douglas

    2011-09-30

    The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: Expanded and updated fuel cell and vehicle technologies education programs; Conducted industry directed research in three thrust areas development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Tech's comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

  7. END POINTS SPECIFICATION METHODS End Points Specification Methods

    Office of Environmental Management (EM)

    SPECIFICATION METHODS End Points Specification Methods Hierarchical End-Points Method Checklist End-Points Method Two methods to develop end point specifications are presented. These have evolved from use in the field for deactivation projects.  The hierarchical method is systematic, comprehensive, and completely defensible as to the basis for each specification. This method may appear complex to the uninitiated, but it is a straightforward application of a systematic engineering approach. It

  8. Evaluation of soft-core processors on a Xilinx Virtex-5 field programmable gate array.

    SciTech Connect (OSTI)

    Learn, Mark Walter

    2011-04-01

    Node-based architecture (NBA) designs for future satellite projects hold the promise of decreasing system development time and costs, size, weight, and power and positioning the laboratory to address other emerging mission opportunities quickly. Reconfigurable field programmable gate array (FPGA)-based modules will comprise the core of several of the NBA nodes. Microprocessing capabilities will be necessary with varying degrees of mission-specific performance requirements on these nodes. To enable the flexibility of these reconfigurable nodes, it is advantageous to incorporate the microprocessor into the FPGA itself, either as a hard-core processor built into the FPGA or as a soft-core processor built out of FPGA elements. This document describes the evaluation of three reconfigurable FPGA-based soft-core processors for use in future NBA systems: the MicroBlaze (uB), the open-source Leon3, and the licensed Leon3. Two standard performance benchmark applications were developed for each processor. The first, Dhrystone, is a fixed-point operation metric. The second, Whetstone, is a floating-point operation metric. Several trials were run at varying code locations, loop counts, processor speeds, and cache configurations. FPGA resource utilization was recorded for each configuration.

  9. Driven Motion and Instability of an Atmospheric Pressure Arc

    SciTech Connect (OSTI)

    Max Karasik

    1999-12-01

    Atmospheric pressure arcs are used extensively in applications such as welding and metallurgy. However, comparatively little is known of the physics of such arcs in external magnetic fields and the mechanisms of the instabilities present. In order to address questions of equilibrium and stability of such arcs, an experimental arc furnace is constructed and operated in air with graphite cathode and steel anode at currents 100-250 A. The arc is diagnosed with a gated intensified camera and a collimated photodiode array, as well as fast voltage and current probes.

  10. Pressure surge attenuator

    DOE Patents [OSTI]

    Christie, Alan M.; Snyder, Kurt I.

    1985-01-01

    A pressure surge attenuation system for pipes having a fluted region opposite crushable metal foam. As adapted for nuclear reactor vessels and heads, crushable metal foam is disposed to attenuate pressure surges.

  11. Pressure-sensitive optrode

    DOE Patents [OSTI]

    Hirschfeld, T.B.

    1986-07-15

    An apparatus is provided for sensing changes in pressure and for generating optical signals related to said changes in pressure. Light from a fiber optic illuminates a fluorescent composition causing it to fluoresce. The fluorescent composition is caused to fluoresce more relative to the end of the fiber optic in response to changes in pressure so that the intensity of fluorescent emissions collected by the same fiber optic used for illumination varies monotonically with pressure. 10 figs.

  12. PRESSURE SYSTEM CONTROL

    DOE Patents [OSTI]

    Esselman, W.H.; Kaplan, G.M.

    1961-06-20

    The control of pressure in pressurized liquid systems, especially a pressurized liquid reactor system, may be achieved by providing a bias circuit or loop across a closed loop having a flow restriction means in the form of an orifice, a storage tank, and a pump connected in series. The subject invention is advantageously utilized where control of a reactor can be achieved by response to the temperature and pressure of the primary cooling system.

  13. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D.; Contolini, Robert J.

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  14. Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate

    Office of Scientific and Technical Information (OSTI)

    Bridge (Technical Report) | SciTech Connect Technical Report: Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Citation Details In-Document Search Title: Technical Feasibility Assessment of LED Roadway Lighting on the Golden Gate Bridge Subsequent to preliminary investigations by the Golden Gate Bridge Highway & Transportation District (GGB), in coordination with Pacific Gas & Electric (PG&E), the GATEWAY Demonstration program was asked to

  15. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) | Department of Energy MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System

  16. AMF Deployment, Point Reyes National Seashore, California

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    California Point Reyes Deployment AMF Home Point Reyes Home Data Plots and Baseline ... AMF Deployment, Point Reyes National Seashore, California Point Reyes National Seashore, ...

  17. Point Bio Energy LLC | Open Energy Information

    Open Energy Info (EERE)

    Point Bio Energy LLC Jump to: navigation, search Name: Point Bio Energy LLC Place: La Pointe, Wisconsin Product: Wisconsin-based wood fuel pellet producer. References: Point Bio...

  18. Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

    SciTech Connect (OSTI)

    Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A.

    2015-07-28

    Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

  19. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

  20. Reduction of skin effect losses in double-level-T-gate structure

    SciTech Connect (OSTI)

    Mikulics, M. Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D.; Gregušová, D.; Novák, J.; Stanček, S.; Kordoš, P.; Sofer, Z.; Juul, L.; Marso, M.

    2014-12-08

    We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

  1. Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    - Bart Gordon, K&L Gates, Partner; Former Representative from Tennessee Stefan Heck, McKinsey & Co., Director, Leader of Global Cleantech Practice Carrie Houtman, The Dow Chemical...

  2. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Broader source: Energy.gov [DOE]

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  3. Computer assisted design of poly-silicon gated enhancement-mode...

    Office of Scientific and Technical Information (OSTI)

    design of poly-silicon gated enhancement-mode lateral double quantum dot devices for quantum computing. Citation Details In-Document Search Title: Computer assisted design of ...

  4. Pressure reducing regulator

    DOE Patents [OSTI]

    Whitehead, John C. (Davis, CA); Dilgard, Lemoyne W. (Willits, CA)

    1995-01-01

    A pressure reducing regulator that controls its downstream or outlet pressure to a fixed fraction of its upstream or inlet pressure. The regulator includes a housing which may be of a titanium alloy, within which is located a seal or gasket at the outlet end which may be made of annealed copper, a rod, and piston, each of which may be made of high density graphite. The regulator is insensitive to temperature by virtue of being without a spring or gas sealed behind a diaphragm, and provides a reference for a system in which it is being used. The rod and piston of the regulator are constructed, for example, to have a 1/20 ratio such that when the downstream pressure is less than 1/20 of the upstream pressure the regulator opens and when the downstream pressure exceeds 1/20 of the upstream pressure the regulator closes.

  5. Pressure reducing regulator

    DOE Patents [OSTI]

    Whitehead, J.C.; Dilgard, L.W.

    1995-10-10

    A pressure reducing regulator that controls its downstream or outlet pressure to a fixed fraction of its upstream or inlet pressure is disclosed. The regulator includes a housing which may be of a titanium alloy, within which is located a seal or gasket at the outlet end which may be made of annealed copper, a rod, and piston, each of which may be made of high density graphite. The regulator is insensitive to temperature by virtue of being without a spring or gas sealed behind a diaphragm, and provides a reference for a system in which it is being used. The rod and piston of the regulator are constructed, for example, to have a 1/20 ratio such that when the downstream pressure is less than 1/20 of the upstream pressure the regulator opens and when the downstream pressure exceeds 1/20 of the upstream pressure the regulator closes. 10 figs.

  6. Miniaturized pressurization system

    DOE Patents [OSTI]

    Whitehead, John C. (Davis, CA); Swink, Don G. (Woodinville, WA)

    1991-01-01

    The invention uses a fluid stored at a low pressure and provides the fluid at a high pressure. The invention allows the low pressure fluid to flow to a fluid bore of a differential pump and from the pump to a fluid pressure regulator. After flowing through the regulator the fluid is converted to a gas which is directed to a gas bore of the differential pump. By controlling the flow of gas entering and being exhausted from the gas bore, the invention provides pressure to the fluid. By setting the regulator, the high pressure fluid can be set at predetermined values. Because the invention only needs a low pressure fluid, the inventive apparatus has a low mass, and therefore would be useful in rocket propulsion systems.

  7. Double-Precision Floating-Point Cores V1.9

    Energy Science and Technology Software Center (OSTI)

    2005-10-15

    In studying the acceleration of scientific computing applications with reconfigurable hardware, such as field programmable gate arrays, one finds that many scientific applications require high-precision, floating-point arithmetic that is not innately supported in reconfigurable hardware. Consequently, we have written VDL code that describes hardware for performing double-precision (64-bit) floating-point arithmetic. From this code, it is possible for users to implement double-precision floating-point operations on FPGAs or any other hardware device to which VHDL code canmore » be synthesized. Specifically, we have written code for four floating-point cores. Each core performs one operation: one performs addition/subtraction, one performs multiplication, one performs division, and one performs square root. The code includes parameters that determine the features of the floating-point cores, such as what types of floating-point numbers are supported and what roudning modes are supported. These parameters influence the frequency achievable by the designs as well as the chip area required for the designs. The parameters are chosen so that the floating-point cores have varyinig amounts of compliance with the industry standard for floating-point cores have varying amounts of compliance with the industry standard for floating-point arithmetic, IEEE standard 754. There is an additional parameter that determines the number of pipelining stages in the floating-point cores.« less

  8. Nonadiabatic molecular orientation by polarization-gated ultrashort laser pulses

    SciTech Connect (OSTI)

    Chen Cheng; Wu Jian; Zeng Heping [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China)

    2010-09-15

    We show that the nonadiabatic orientation of diatomic polar molecules can be controlled by polarization-gated ultrashort laser pulses. By finely adjusting the time interval between two circularly polarized pulses of different wavelengths but the same helicity, the orientation direction of the molecules can be twirled. A cloverlike potential is created by using two circularly polarized laser pulses of different wavelengths and opposite helicity, leading to multidirectional molecular orientation along the potential wells, which can be well revealed by a high-order statistics metric of <>.

  9. High pressure xenon ionization detector

    DOE Patents [OSTI]

    Markey, John K. (New Haven, CT)

    1989-01-01

    A method is provided for detecting ionization comprising allowing particles that cause ionization to contact high pressure xenon maintained at or near its critical point and measuring the amount of ionization. An apparatus is provided for detecting ionization, the apparatus comprising a vessel containing a ionizable medium, the vessel having an inlet to allow high pressure ionizable medium to enter the vessel, a means to permit particles that cause ionization of the medium to enter the vessel, an anode, a cathode, a grid and a plurality of annular field shaping rings, the field shaping rings being electrically isolated from one another, the anode, cathode, grid and field shaping rings being electrically isolated from one another in order to form an electric field between the cathode and the anode, the electric field originating at the anode and terminating at the cathode, the grid being disposed between the cathode and the anode, the field shaping rings being disposed between the cathode and the grid, the improvement comprising the medium being xenon and the vessel being maintained at a pressure of 50 to 70 atmospheres and a temperature of 0.degree. to 30.degree. C.

  10. High pressure xenon ionization detector

    DOE Patents [OSTI]

    Markey, J.K.

    1989-11-14

    A method is provided for detecting ionization comprising allowing particles that cause ionization to contact high pressure xenon maintained at or near its critical point and measuring the amount of ionization. An apparatus is provided for detecting ionization, the apparatus comprising a vessel containing a ionizable medium, the vessel having an inlet to allow high pressure ionizable medium to enter the vessel, a means to permit particles that cause ionization of the medium to enter the vessel, an anode, a cathode, a grid and a plurality of annular field shaping rings, the field shaping rings being electrically isolated from one another, the anode, cathode, grid and field shaping rings being electrically isolated from one another in order to form an electric field between the cathode and the anode, the electric field originating at the anode and terminating at the cathode, the grid being disposed between the cathode and the anode, the field shaping rings being disposed between the cathode and the grid, the improvement comprising the medium being xenon and the vessel being maintained at a pressure of 50 to 70 atmospheres and a temperature of 0 to 30 C. 2 figs.

  11. Microsoft PowerPoint - WIPPRecovery

    Office of Environmental Management (EM)

    Department of Energy Tsinghua Slideshow final for distribution (2) Microsoft PowerPoint - Tsinghua Slideshow final for distribution (2) Microsoft PowerPoint - Tsinghua Slideshow final for distribution (2) (4.67 MB) More Documents & Publications Microsoft PowerPoint - Final translated version of Tsinghua Speech Idaho Operations AMWTP Fact Sheet Methane Hydrate R&D

    Innovation that Can Make a Difference Secretary Steven Chu Emirates Palace Hotel Abu Dhabi, United Arab Emirates 24

  12. Approximate Model for Turbulent Stagnation Point Flow.

    SciTech Connect (OSTI)

    Dechant, Lawrence

    2016-01-01

    Here we derive an approximate turbulent self-similar model for a class of favorable pressure gradient wedge-like flows, focusing on the stagnation point limit. While the self-similar model provides a useful gross flow field estimate this approach must be combined with a near wall model is to determine skin friction and by Reynolds analogy the heat transfer coefficient. The combined approach is developed in detail for the stagnation point flow problem where turbulent skin friction and Nusselt number results are obtained. Comparison to the classical Van Driest (1958) result suggests overall reasonable agreement. Though the model is only valid near the stagnation region of cylinders and spheres it nonetheless provides a reasonable model for overall cylinder and sphere heat transfer. The enhancement effect of free stream turbulence upon the laminar flow is used to derive a similar expression which is valid for turbulent flow. Examination of free stream enhanced laminar flow suggests that the rather than enhancement of a laminar flow behavior free stream disturbance results in early transition to turbulent stagnation point behavior. Excellent agreement is shown between enhanced laminar flow and turbulent flow behavior for high levels, e.g. 5% of free stream turbulence. Finally the blunt body turbulent stagnation results are shown to provide realistic heat transfer results for turbulent jet impingement problems.

  13. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S

    2014-06-01

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  14. Quantum transport of two-species Dirac fermions in dual-gated three-dimensional topological insulators

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Xu, Yang; Miotkowski, Ireneusz; Chen, Yong P.

    2016-05-04

    Topological insulators are a novel class of quantum matter with a gapped insulating bulk, yet gapless spin-helical Dirac fermion conducting surface states. Here, we report local and non-local electrical and magneto transport measurements in dual-gated BiSbTeSe2 thin film topological insulator devices, with conduction dominated by the spatially separated top and bottom surfaces, each hosting a single species of Dirac fermions with independent gate control over the carrier type and density. We observe many intriguing quantum transport phenomena in such a fully tunable two-species topological Dirac gas, including a zero-magnetic-field minimum conductivity close to twice the conductance quantum at the doublemore » Dirac point, a series of ambipolar two-component half-integer Dirac quantum Hall states and an electron-hole total filling factor zero state (with a zero-Hall plateau), exhibiting dissipationless (chiral) and dissipative (non-chiral) edge conduction, respectively. As a result, such a system paves the way to explore rich physics, ranging from topological magnetoelectric effects to exciton condensation.« less

  15. Pressure cryocooling protein crystals

    DOE Patents [OSTI]

    Kim, Chae Un; Gruner, Sol M.

    2011-10-04

    Preparation of cryocooled protein crystal is provided by use of helium pressurizing and cryocooling to obtain cryocooled protein crystal allowing collection of high resolution data and by heavier noble gas (krypton or xenon) binding followed by helium pressurizing and cryocooling to obtain cryocooled protein crystal for collection of high resolution data and SAD phasing simultaneously. The helium pressurizing is carried out on crystal coated to prevent dehydration or on crystal grown in aqueous solution in a capillary.

  16. High temperature pressure gauge

    DOE Patents [OSTI]

    Echtler, J. Paul; Scandrol, Roy O.

    1981-01-01

    A high temperature pressure gauge comprising a pressure gauge positioned in fluid communication with one end of a conduit which has a diaphragm mounted in its other end. The conduit is filled with a low melting metal alloy above the diaphragm for a portion of its length with a high temperature fluid being positioned in the remaining length of the conduit and in the pressure gauge.

  17. Bag pressure monitor

    DOE Patents [OSTI]

    Vaughn, Mark Roy; Miller, Alva Keith

    2000-01-01

    An inexpensive mechanical indicator for measuring low pressure in an inflating bag includes a pair of sides connected to each other at one edge and pivotally connected at spaced parallel locations on the bag. A spring biases the sides towards each other in opposition to tension in the inflating bag. The distance between the sides is indicative of the pressure in the bag. The device is accurate at pressures below 0.05 psi.

  18. Pressure-sensitive optrode

    DOE Patents [OSTI]

    Hirschfeld, Tomas B. (Livermore, CA)

    1985-01-01

    Apparatus and method for sensing changes in pressure and for generating optical signals related to changes in pressure. Light from a fiber optic is directed to a movable surface which is coated with a light-responsive material, and which moves relative to the end of the fiber optic in response to changes in pressure. The same fiber optic collects a portion of the reflected or emitted light from the movable surface. Changes in pressure are determined by measuring changes in the amount of light collected.

  19. Pressurized fluidized bed reactor

    DOE Patents [OSTI]

    Isaksson, Juhani

    1996-01-01

    A pressurized fluid bed reactor power plant includes a fluidized bed reactor contained within a pressure vessel with a pressurized gas volume between the reactor and the vessel. A first conduit supplies primary gas from the gas volume to the reactor, passing outside the pressure vessel and then returning through the pressure vessel to the reactor, and pressurized gas is supplied from a compressor through a second conduit to the gas volume. A third conduit, comprising a hot gas discharge, carries gases from the reactor, through a filter, and ultimately to a turbine. During normal operation of the plant, pressurized gas is withdrawn from the gas volume through the first conduit and introduced into the reactor at a substantially continuously controlled rate as the primary gas to the reactor. In response to an operational disturbance of the plant, the flow of gas in the first, second, and third conduits is terminated, and thereafter the pressure in the gas volume and in the reactor is substantially simultaneously reduced by opening pressure relief valves in the first and third conduits, and optionally by passing air directly from the second conduit to the turbine.

  20. Sapphire tube pressure vessel

    DOE Patents [OSTI]

    Outwater, John O. (Cambridge, MA)

    2000-01-01

    A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.

  1. Pressure-sensitive optrode

    DOE Patents [OSTI]

    Hirschfeld, T.B.

    1985-04-09

    An apparatus and method are disclosed for sensing changes in pressure and for generating optical signals related to changes in pressure. Light from a fiber optic is directed to a movable surface which is coated with a light-responsive material, and which moves relative to the end of the fiber optic in response to changes in pressure. The same fiber optic collects a portion of the reflected or emitted light from the movable surface. Changes in pressure are determined by measuring changes in the amount of light collected. 5 figs.

  2. Pressurized Combustion and Gasification

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    ... However, properly designing new pressurized combustion burners and boilers requires accurate data on coal devolatilization and combustion rates under these conditions. Similarly, ...

  3. Pressurized fluidized bed reactor

    DOE Patents [OSTI]

    Isaksson, J.

    1996-03-19

    A pressurized fluid bed reactor power plant includes a fluidized bed reactor contained within a pressure vessel with a pressurized gas volume between the reactor and the vessel. A first conduit supplies primary gas from the gas volume to the reactor, passing outside the pressure vessel and then returning through the pressure vessel to the reactor, and pressurized gas is supplied from a compressor through a second conduit to the gas volume. A third conduit, comprising a hot gas discharge, carries gases from the reactor, through a filter, and ultimately to a turbine. During normal operation of the plant, pressurized gas is withdrawn from the gas volume through the first conduit and introduced into the reactor at a substantially continuously controlled rate as the primary gas to the reactor. In response to an operational disturbance of the plant, the flow of gas in the first, second, and third conduits is terminated, and thereafter the pressure in the gas volume and in the reactor is substantially simultaneously reduced by opening pressure relief valves in the first and third conduits, and optionally by passing air directly from the second conduit to the turbine. 1 fig.

  4. 6151 Pressure Systems

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    For design, fabrication, testing, repair, modification and inspection are based on the American Society of Mechanical Engineers (ASME) Boiler and Pressure Vessel Code, Section ...

  5. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.

    1999-08-10

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.

  6. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, Stewart M.; Bliss, David E.; Kimmel, Mark W.; Neal, Daniel R.

    1999-01-01

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.

  7. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias

    2014-03-21

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  8. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers...

  9. Dual shell pressure balanced vessel

    DOE Patents [OSTI]

    Fassbender, Alexander G.

    1992-01-01

    A dual-wall pressure balanced vessel for processing high viscosity slurries at high temperatures and pressures having an outer pressure vessel and an inner vessel with an annular space between the vessels pressurized at a pressure slightly less than or equivalent to the pressure within the inner vessel.

  10. A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity

    SciTech Connect (OSTI)

    Obada, A.-S.F.; Hessian, H.A.; Mohamed, A.-B.A.; Community College, Salman Bin Abdulaziz University, Al-Aflaj ; Homid, Ali H.

    2013-07-15

    A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. Three- and two-qubit operations are generated via a classical field with the flux. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

  11. END POINTS MANAGEMENT End Points Management The Need for End...

    Office of Environmental Management (EM)

    End Points End-state has been used to refer to the overall status and disposition of a ... They are equally applicable and usable for planning of stabilization and decommissioning ...

  12. Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

    SciTech Connect (OSTI)

    Childres, Isaac; Jauregui, Luis A.; Chen, Yong P.

    2014-12-21

    We report a Raman spectroscopy study of graphene field-effect transistors with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (V{sub g}) for various irradiation dosages (R{sub e}). We study effects in the Raman spectra due to V{sub g}-induced doping and artificially created disorder at various R{sub e}. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (n{sub FE}) exhibits a minimum in peak frequency and a maximum in peak width near the charge-neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I{sub 2D}/I{sub G} and weak maximum in I{sub D}/I{sub G} near the CNP. All the observed dependences of Raman parameters on n{sub FE} weaken at stronger disorder (higher R{sub e}), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.

  13. Surface texturing of superconductors by controlled oxygen pressure

    DOE Patents [OSTI]

    Chen, N.; Goretta, K.C.; Dorris, S.E.

    1999-01-05

    A method of manufacture of a textured layer of a high temperature superconductor on a substrate is disclosed. The method involves providing an untextured high temperature superconductor material having a characteristic ambient pressure peritectic melting point, heating the superconductor to a temperature below the peritectic temperature, establishing a reduced pO{sub 2} atmosphere below ambient pressure causing reduction of the peritectic melting point to a reduced temperature which causes melting from an exposed surface of the superconductor and raising pressure of the reduced pO{sub 2} atmosphere to cause solidification of the molten superconductor in a textured surface layer. 8 figs.

  14. Surface texturing of superconductors by controlled oxygen pressure

    DOE Patents [OSTI]

    Chen, Nan; Goretta, Kenneth C.; Dorris, Stephen E.

    1999-01-01

    A method of manufacture of a textured layer of a high temperature superconductor on a substrate. The method involves providing an untextured high temperature superconductor material having a characteristic ambient pressure peritectic melting point, heating the superconductor to a temperature below the peritectic temperature, establishing a reduced pO.sub.2 atmosphere below ambient pressure causing reduction of the peritectic melting point to a reduced temperature which causes melting from an exposed surface of the superconductor and raising pressure of the reduced pO.sub.2 atmosphere to cause solidification of the molten superconductor in a textured surface layer.

  15. Pressurized water reactor flow skirt apparatus

    DOE Patents [OSTI]

    Kielb, John F.; Schwirian, Richard E.; Lee, Naugab E.; Forsyth, David R.

    2016-04-05

    A pressurized water reactor vessel having a flow skirt formed from a perforated cylinder structure supported in the lower reactor vessel head at the outlet of the downcomer annulus, that channels the coolant flow through flow holes in the wall of the cylinder structure. The flow skirt is supported at a plurality of circumferentially spaced locations on the lower reactor vessel head that are not equally spaced or vertically aligned with the core barrel attachment points, and the flow skirt employs a unique arrangement of hole patterns that assure a substantially balanced pressure and flow of the coolant over the entire underside of the lower core support plate.

  16. High-Pressure Micellar Solutions of Symmetric and Asymmetric Styrene?Diene Diblocks in Compressible Near Critical Solvents: Micellization Pressures and Cloud Pressures Respond but Micellar Cloud Pressures Insensitive to Copolymer Molecular Weight, Concentration, and Block Ratio Changes

    SciTech Connect (OSTI)

    Winoto, Winoto; Tan, Sugata; Shen, Youqin; Radosz, Maciej; Hong, Kunlun; Mays, Jimmy

    2009-01-01

    Micellar solutions of polystyrene-block-polybutadiene and polystyrene-block-polyisoprene in propane are found to exhibit significantly lower cloud pressures than the corresponding hypothetical nonmicellar solutions. Such a cloud-pressure reduction indicates the extent to which micelle formation enhances the apparent diblock solubility in near-critical and hence compressible propane. Concentration-dependent pressure-temperature points beyond which no micelles can be formed, referred to as the micellization end points, are found to depend on the block type, size, and ratio. The cloud-pressure reduction and the micellization end point measured for styrene-diene diblocks in propane should be characteristic of all amphiphilic diblock copolymer solutions that form micelles in compressible solvents.

  17. Quantum gates controlled by spin chain soliton excitations

    SciTech Connect (OSTI)

    Cuccoli, Alessandro; Nuzzi, Davide; Vaia, Ruggero; Verrucchi, Paola

    2014-05-07

    Propagation of soliton-like excitations along spin chains has been proposed as a possible way for transmitting both classical and quantum information between two distant parties with negligible dispersion and dissipation. In this work, a somewhat different use of solitons is considered. Solitons propagating along a spin chain realize an effective magnetic field, well localized in space and time, which can be exploited as a means to manipulate the state of an external spin (i.e., a qubit) that is weakly coupled to the chain. We have investigated different couplings between the qubit and the chain, as well as different soliton shapes, according to a Heisenberg chain model. It is found that symmetry properties strongly affect the effectiveness of the proposed scheme, and the most suitable setups for implementing single qubit quantum gates are singled out.

  18. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K.; Potter, Thomas F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  19. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  20. Methods for determining atypical gate valve thrust requirements

    SciTech Connect (OSTI)

    Steele, R. Jr.; Watkins, J.C.; DeWall, K.G.

    1995-04-01

    Evaluating the performance of rising stem, wedge type, gate valves used in nuclear power plant is not a problem when the valves can be design-basis tested and their operability margins determined diagnostically. The problem occurs when they cannot be tested because of plant system limitations or when they can be tested only at some less-than-design-basis condition. To evaluate the performance of these valves requires various analytical and/or extrapolation methods by which the design-basis stem thrust requirement can be determined. This has been typically accomplished with valve stem thrust models used to calculate the requirements or by extrapolating the results from a less-than-design-basis test. The stem thrust models used by the nuclear industry to determine the opening or closing stem thrust requirements for these gate valves have generally assumed that the highest load the valve experiences during closure (but before seating) is at flow isolation and during unwedging or before flow initiation in the opening direction. However, during full-scale valve testing conducted for the USNRC, several of the valves produced stem thrust histories that showed peak closing stem forces occurring before flow isolation in the closing direction and after flow initiation in the opening direction. All of the valves that exhibited this behavior in the closing direction also showed signs of internal damage. Initially, we dismissed the early peak in the closing stem thrust requirement as damage-induced and labeled it nonpredictable behavior. Opening responses were not a priority in our early research, so that phenomenon was set aside for later evaluation.

  1. Pressurizer tank upper support

    DOE Patents [OSTI]

    Baker, Tod H.; Ott, Howard L.

    1994-01-01

    A pressurizer tank in a pressurized water nuclear reactor is mounted between structural walls of the reactor on a substructure of the reactor, the tank extending upwardly from the substructure. For bearing lateral loads such as seismic shocks, a girder substantially encircles the pressurizer tank at a space above the substructure and is coupled to the structural walls via opposed sway struts. Each sway strut is attached at one end to the girder and at an opposite end to one of the structural walls, and the sway struts are oriented substantially horizontally in pairs aligned substantially along tangents to the wall of the circular tank. Preferably, eight sway struts attach to the girder at 90.degree. intervals. A compartment encloses the pressurizer tank and forms the structural wall. The sway struts attach to corners of the compartment for maximum stiffness and load bearing capacity. A valve support frame carrying the relief/discharge piping and valves of an automatic depressurization arrangement is fixed to the girder, whereby lateral loads on the relief/discharge piping are coupled directly to the compartment rather than through any portion of the pressurizer tank. Thermal insulation for the valve support frame prevents thermal loading of the piping and valves. The girder is shimmed to define a gap for reducing thermal transfer, and the girder is free to move vertically relative to the compartment walls, for accommodating dimensional variation of the pressurizer tank with changes in temperature and pressure.

  2. Pressurizer tank upper support

    DOE Patents [OSTI]

    Baker, T.H.; Ott, H.L.

    1994-01-11

    A pressurizer tank in a pressurized water nuclear reactor is mounted between structural walls of the reactor on a substructure of the reactor, the tank extending upwardly from the substructure. For bearing lateral loads such as seismic shocks, a girder substantially encircles the pressurizer tank at a space above the substructure and is coupled to the structural walls via opposed sway struts. Each sway strut is attached at one end to the girder and at an opposite end to one of the structural walls, and the sway struts are oriented substantially horizontally in pairs aligned substantially along tangents to the wall of the circular tank. Preferably, eight sway struts attach to the girder at 90[degree] intervals. A compartment encloses the pressurizer tank and forms the structural wall. The sway struts attach to corners of the compartment for maximum stiffness and load bearing capacity. A valve support frame carrying the relief/discharge piping and valves of an automatic depressurization arrangement is fixed to the girder, whereby lateral loads on the relief/discharge piping are coupled directly to the compartment rather than through any portion of the pressurizer tank. Thermal insulation for the valve support frame prevents thermal loading of the piping and valves. The girder is shimmed to define a gap for reducing thermal transfer, and the girder is free to move vertically relative to the compartment walls, for accommodating dimensional variation of the pressurizer tank with changes in temperature and pressure. 10 figures.

  3. Fuel dissipater for pressurized fuel cell generators

    DOE Patents [OSTI]

    Basel, Richard A.; King, John E.

    2003-11-04

    An apparatus and method are disclosed for eliminating the chemical energy of fuel remaining in a pressurized fuel cell generator (10) when the electrical power output of the fuel cell generator is terminated during transient operation, such as a shutdown; where, two electrically resistive elements (two of 28, 53, 54, 55) at least one of which is connected in parallel, in association with contactors (26, 57, 58, 59), a multi-point settable sensor relay (23) and a circuit breaker (24), are automatically connected across the fuel cell generator terminals (21, 22) at two or more contact points, in order to draw current, thereby depleting the fuel inventory in the generator.

  4. Cedar Point Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Cedar Point Wind Farm Jump to: navigation, search Name Cedar Point Wind Farm Facility Cedar Point Wind Farm Sector Wind energy Facility Type Commercial Scale Wind Facility Status...

  5. PowerPoint Presentation | Department of Energy

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PowerPoint Presentation PowerPoint Presentation PDF icon PowerPoint Presentation More Documents & Publications 2012 Quality Assurance Improvement Project Plan EM QA Working Group...

  6. Star Point Wind Farm | Open Energy Information

    Open Energy Info (EERE)

    Point Wind Farm Jump to: navigation, search Name Star Point Wind Farm Facility Star Point Wind Farm Sector Wind energy Facility Type Commercial Scale Wind Facility Status In...

  7. Prosthesis Socket Pressure Tools v. 1.0

    SciTech Connect (OSTI)

    2010-04-28

    Renders, saves, and analyzes pressure from several sensors in a prosthesis? socket. The program receives pressure data from 64 manometers and parses the pressure for each individual sensor. The program can then display those pressures as number in a table. The program also interpolates pressures between manometers to create a larger set of data. This larger set of data is displayed as a simple contour plot. That same contour plot can also be placed on a three-dimensional surface in the shape of a prosthesis.This program allows for easy identification of high pressure areas in a prosthesis to reduce the user?s discomfort. The program parses the sensor pressures into a human-readable numeric format. The data may also be used to actively adjust bladders within the prosthesis to spread out pressure in real time, according to changing demands placed on the prosthesis. Interpolation of the pressures to create a larger data set makes it even easier for a human to identify particular areas of the prosthesis that are under high pressure. After identifying pressure points, a prosthetician can then redesign the prosthesis and/or command the bladders in the prosthesis to attempt to maintain constant pressures.

  8. Prosthesis Socket Pressure Tools v. 1.0

    Energy Science and Technology Software Center (OSTI)

    2010-04-28

    Renders, saves, and analyzes pressure from several sensors in a prosthesis™ socket. The program receives pressure data from 64 manometers and parses the pressure for each individual sensor. The program can then display those pressures as number in a table. The program also interpolates pressures between manometers to create a larger set of data. This larger set of data is displayed as a simple contour plot. That same contour plot can also be placed onmore » a three-dimensional surface in the shape of a prosthesis.This program allows for easy identification of high pressure areas in a prosthesis to reduce the user™s discomfort. The program parses the sensor pressures into a human-readable numeric format. The data may also be used to actively adjust bladders within the prosthesis to spread out pressure in real time, according to changing demands placed on the prosthesis. Interpolation of the pressures to create a larger data set makes it even easier for a human to identify particular areas of the prosthesis that are under high pressure. After identifying pressure points, a prosthetician can then redesign the prosthesis and/or command the bladders in the prosthesis to attempt to maintain constant pressures.« less

  9. Gate controlled electronic transport in monolayer MoS{sub 2} field effect transistor

    SciTech Connect (OSTI)

    Zhou, Y. F.; Wang, B.; Yu, Y. J.; Wei, Y. D. E-mail: jianwang@hku.hk; Xian, H. M.; Wang, J. E-mail: jianwang@hku.hk

    2015-03-14

    The electronic spin and valley transport properties of a monolayer MoS{sub 2} are investigated using the non-equilibrium Green's function formalism combined with density functional theory. Due to the presence of strong Rashba spin orbit interaction (RSOI), the electronic valence bands of monolayer MoS{sub 2} are split into spin up and spin down Zeeman-like texture near the two inequivalent vertices K and K′ of the first Brillouin zone. When the gate voltage is applied in the scattering region, an additional strong RSOI is induced which generates an effective magnetic field. As a result, electron spin precession occurs along the effective magnetic field, which is controlled by the gate voltage. This, in turn, causes the oscillation of conductance as a function of the magnitude of the gate voltage and the length of the gate region. This current modulation due to the spin precession shows the essential feature of the long sought Datta-Das field effect transistor (FET). From our results, the oscillation periods for the gate voltage and gate length are found to be approximately 2.2 V and 20.03a{sub B} (a{sub B} is Bohr radius), respectively. These observations can be understood by a simple spin precessing model and indicate that the electron behaviors in monolayer MoS{sub 2} FET are both spin and valley related and can easily be controlled by the gate.

  10. Wax Point Determinations Using Acoustic Resonance Spectroscopy

    SciTech Connect (OSTI)

    Bostick, D.T.; Jubin, R.T.; Schmidt, T.W.

    2001-06-01

    The thermodynamic characterization of the wax point of a given crude is essential in order to maintain flow conditions that prevent plugging of undersea pipelines. This report summarizes the efforts made towards applying an Acoustic Cavity Resonance Spectrometer (ACRS) to the determination of pressures and temperatures at which wax precipitates from crude. Phillips Petroleum Company, Inc., the CRADA participant, supplied the ACRS. The instrumentation was shipped to Dr. Thomas Schmidt of ORNL, the CRADA contractor, in May 2000 after preliminary software development performed under the guidance of Dr. Samuel Colgate and Dr. Evan House of the University of Florida, Gainesville, Fl. Upon receipt it became apparent that a number of modifications still needed to be made before the ACRS could be precisely and safely used for wax point measurements. This report reviews the sequence of alterations made to the ACRS, as well as defines the possible applications of the instrumentation once the modifications have been completed. The purpose of this Cooperative Research and Development Agreement (CRADA) between Phillips Petroleum Company, Inc. (Participant) and Lockheed Martin Energy Research Corporation (Contractor) was the measurement of the formation of solids in crude oils and petroleum products that are commonly transported through pipelines. This information is essential in the proper design, operation and maintenance of the petroleum pipeline system in the United States. Recently, new petroleum discoveries in the Gulf of Mexico have shown that there is a potential for plugging of undersea pipeline because of the precipitation of wax. It is important that the wax points of the expected crude oils be well characterized so that the production facilities for these new wells are capable of properly transporting the expected production. The goal of this work is to perform measurements of solids formation in crude oils and petroleum products supplied by the Participant. It is