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Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
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1

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

2

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

3

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

4

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

5

Zirconium-doped tantalum oxide high-k gate dielectric films  

E-Print Network [OSTI]

layer formation and properties were studied with or without an inserted thin tantalum nitride (TaNx) layer. The gate electrode material influence on the dielectric properties was also investigated. Four types of gate materials, i.e., aluminum (Al...

Tewg, Jun-Yen

2005-02-17T23:59:59.000Z

6

Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET  

E-Print Network [OSTI]

on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET Characteristics.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

Anlage, Steven

7

Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive Layer Assisted Deposition. Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive...

8

In situ oxidation of subsurface formations  

DOE Patents [OSTI]

Methods and systems for treating a hydrocarbon containing formation described herein include providing heat to a first portion of the formation from a plurality of heaters in the first portion, producing produced through one or more production wells in a second portion of the formation, reducing or turning off heat provided to the first portion after a selected time, providing an oxidizing fluid through one or more of the heater wells in the first portion, providing heat to the first portion and the second portion through oxidation of at least some hydrocarbons in the first portion, and producing fluids through at least one of the production wells in the second portion. The produced fluids may include at least some oxidized hydrocarbons produced in the first portion.

Beer, Gary Lee (Houston, TX); Mo, Weijian (Sugar Land, TX); Li, Busheng (Houston, TX); Shen, Chonghui (Calgary, CA)

2011-01-11T23:59:59.000Z

9

Aromatics oxidation and soot formation in flames  

SciTech Connect (OSTI)

This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify and to determine or confirm rate constants for the main benzene oxidation reactions in flames, and to characterize fullerenes and their formation mechanisms and kinetics.

Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T. [Massachusetts Institute of Technology, Cambridge (United States)

1993-12-01T23:59:59.000Z

10

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment  

SciTech Connect (OSTI)

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

2013-07-01T23:59:59.000Z

11

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Broader source: Energy.gov (indexed) [DOE]

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

12

Heating subsurface formations by oxidizing fuel on a fuel carrier  

DOE Patents [OSTI]

A method of heating a portion of a subsurface formation includes drawing fuel on a fuel carrier through an opening formed in the formation. Oxidant is supplied to the fuel at one or more locations in the opening. The fuel is combusted with the oxidant to provide heat to the formation.

Costello, Michael; Vinegar, Harold J.

2012-10-02T23:59:59.000Z

13

Sulfated Mesoporous Niobium Oxide Catalyzed 5-Hydroxymethylfurfural Formation from Sugars  

Science Journals Connector (OSTI)

Sulfated Mesoporous Niobium Oxide Catalyzed 5-Hydroxymethylfurfural Formation from Sugars ... The effectiveness of sulfated mesoporous niobium oxide (MNO-S) as a catalyst for the production of 5-hydroxymethylfurfural (5-HMF) from sugar was studied and is reported herein. ...

Ernest Lau Sze Ngee; Yongjun Gao; Xi Chen; Timothy Misso Lee; Zhigang Hu; Dan Zhao; Ning Yan

2014-08-25T23:59:59.000Z

14

E-Print Network 3.0 - aluminum oxide gate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during ProgramErase Operations Summary: ABSTRACT The control gate...

15

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

16

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in  

E-Print Network [OSTI]

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause mechanisms are bias temperature instability (BTI) [1] and hot-carrier injection (HCI) [2], both of which can is compounded by thermal feedback, since active devices located at die hot spots operate at an elevated

Lipasti, Mikko H.

17

Water-induced Formation of Cobalt Oxides Over SupportedCobalt...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Formation of Cobalt Oxides Over Supported CobaltCeria-Zirconia Catalysts under Ethanol-Steam Conditions. Water-induced Formation of Cobalt Oxides Over Supported Cobalt...

18

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

19

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network [OSTI]

nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

Lin, Chen-Han

2012-10-19T23:59:59.000Z

20

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network [OSTI]

of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ?? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

Lu, Jiang

2007-04-25T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Formation of hydroxylamine on dust grains via ammonia oxidation  

E-Print Network [OSTI]

The quest to detect prebiotic molecules in space, notably amino acids, requires an understanding of the chemistry involving nitrogen atoms. Hydroxylamine (NH$_2$OH) is considered a precursor to the amino acid glycine. Although not yet detected, NH$_2$OH is considered a likely target of detection with ALMA. We report on an experimental investigation of the formation of hydroxylamine on an amorphous silicate surface via the oxidation of ammonia. The experimental data are then fed into a simulation of the formation of NH$_2$OH in dense cloud conditions. On ices at 14 K and with a modest activation energy barrier, NH$_2$OH is found to be formed with an abundance that never falls below a factor 10 with respect to NH$_3$. Suggestions of conditions for future observations are provided.

He, Jiao; Lemaire, Jean-Louis; Garrod, Robin T

2015-01-01T23:59:59.000Z

22

Hydrogen Generation and Coke Formation over a Diesel Oxidation Catalyst under Fuel Rich Conditions  

Science Journals Connector (OSTI)

Hydrogen Generation and Coke Formation over a Diesel Oxidation Catalyst under Fuel Rich Conditions ... Hydrogen production via hydrocarbon steam reforming and water gas shift reactions was investigated over a monolith-supported Pt-based diesel oxidation catalyst. ...

Meshari AL-Harbi; Jin-Yong Luo; Robert Hayes; Martin Votsmeier; William S. Epling

2010-12-08T23:59:59.000Z

23

Competitive oxygen-18 kinetic isotope effects expose OO bond formation in water oxidation  

E-Print Network [OSTI]

Competitive oxygen-18 kinetic isotope effects expose O­O bond formation in water oxidation. Roth*a Competitive oxygen kinetic isotope effects (18 O KIEs) on water oxidation initiated by ruthenium during oxygenic photo- synthesis.1 Formation of the O­O bond in molecular oxygen has been proposed

Roth, Justine P.

24

On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack  

SciTech Connect (OSTI)

Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

2007-09-10T23:59:59.000Z

25

Formation of thin walled ceramic solid oxide fuel cells  

DOE Patents [OSTI]

To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

Claar, Terry D. (Tisle, IL); Busch, Donald E. (Hinsdale, IL); Picciolo, John J. (Lockport, IL)

1989-01-01T23:59:59.000Z

26

Polycrystalline oxides formation during transient oxidation of (001) Cu-Ni binary alloys studied by in situ TEM and XRD.  

SciTech Connect (OSTI)

The nucleation and growth of Cu{sub 2}O and NiO islands due to oxidation of Cu{sub x}Ni{sub 1-x} (001) films were monitored, at various temperatures, by in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM) and in situ synchrotron X-ray diffraction (XRD). In remarkable contrast to our previous observations of Cu and Cu-Au oxidation, irregular-shaped polycrystalline oxide islands formed with respect to the Cu-Ni alloy film, and an unusual second oxide nucleation stage was noted. In situ XRD experiments revealed that NiO formed first epitaxially, then other orientations appeared, and finally polycrystalline Cu{sub 2}O developed as the oxidation pressure was increased. The segregation of Ni and Cu towards or away, respectively, from the alloy surface during oxidation could disrupt the surface and cause polycrystalline oxide formation.

Yang, J. C.; Li, Z. Q.; Sun, L.; Zhou, G. W.; Eastman, J. A.; Fong, D. D.; Fuoss, P. H.; Baldo, P. M.; Rehn, L. E.; Thompson, L. J.; Materials Science Division; Univ.of Pittsburgh; State Univ. of New York at Binghamton

2009-01-01T23:59:59.000Z

27

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

28

Extraordinarily small Tafel slope for oxide formation reaction on Pt (111) surface  

Science Journals Connector (OSTI)

Oxide formation reaction current density on Pt (111) was estimated by time-differentiating oxide growth curves during a potential hold as a function of the potential and the coverage with the oxide below 0.35 ML (monolayer). The Tafel slope was 1824mVdecade?1 in the condition where the Tafel plot is on a straight line. The reaction mechanism accounting for this small slope was proposed, in which the oxide formation process is assumed as a combination of a fast electron transfer step and a following slow step.

Kensaku Kodama; Ryosuke Jinnouchi; Takahisa Suzuki; Tatsuya Hatanaka; Yu Morimoto

2012-01-01T23:59:59.000Z

29

The Formation of Highly Oxidized Multifunctional Products in the Ozonolysis of Cyclohexene  

Science Journals Connector (OSTI)

The prompt formation of highly oxidized organic compounds in the ozonolysis of cyclohexene (C6H10) was investigated by means of laboratory experiments together with quantum chemical calculations. The experiments were performed in borosilicate glass flow ...

Matti P. Rissanen; Theo Kurtn; Mikko Sipil; Joel A. Thornton; Juha Kangasluoma; Nina Sarnela; Heikki Junninen; Solvejg Jrgensen; Simon Schallhart; Maija K. Kajos; Risto Taipale; Monika Springer; Thomas F. Mentel; Taina Ruuskanen; Tuukka Petj; Douglas R. Worsnop; Henrik G. Kjaergaard; Mikael Ehn

2014-10-06T23:59:59.000Z

30

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films  

SciTech Connect (OSTI)

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

2013-12-09T23:59:59.000Z

31

Sulfur dioxide oxidation and plume formation at cement kilns  

SciTech Connect (OSTI)

Results of source sampling at the Glens Falls cement kiln in Glens Falls, N.Y., are reported for sulfur oxides, ammonia, hydrochloric acid, oxygen, and moisture content. The origin of a detached, high-opacity, persistent plume originating from the cement kiln stack is investigated. It is proposed that this plume is due to ammonium salts of SOx and sulfuric acid that have been formed in condensed water droplets in the plume by the pseudocatalytic action of ammonia. (1 diagram, 1 graph, 22 references, 7 tables)

Dellinger, B.; Grotecloss, G.; Fortune, C.R.; Cheney, J.L.; Homolya, J.B.

1980-10-01T23:59:59.000Z

32

Formation of Chloroform and Chlorinated Organics by Free-Chlorine-Mediated Oxidation of Triclosan  

Science Journals Connector (OSTI)

Formation of Chloroform and Chlorinated Organics by Free-Chlorine-Mediated Oxidation of Triclosan ... The widely used antimicrobial agent triclosan (5-chloro-2-(2,4-dichlorophenoxy)phenol) readily reacts with free chlorine under drinking water treatment conditions. ... Overall second-order kinetics were observed, first-order in free chlorine and first-order in triclosan. ...

Krista L. Rule; Virginia R. Ebbett; Peter J. Vikesland

2005-04-02T23:59:59.000Z

33

Formation of the first oxidized iron in the solar system Lawrence GROSSMAN1,2  

E-Print Network [OSTI]

Formation of the first oxidized iron in the solar system Lawrence GROSSMAN1,2 , Alexei V. FEDKIN1 the first solid form of FeO appeared in the solar system. HIGH-TEMPERATURE CONDENSATION OF FEO years, and systems enriched in water by a factor of ten relative to solar composition, 1 lm radius

Grossman, Lawrence

34

Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes  

E-Print Network [OSTI]

Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes ScienceDaily (Aug. 29, 2007) -- Moving beyond carbon nanotubes, researchers are developing insights-walled inorganic nanotubes could be useful in a range of nanotechnology applications that require precise control

Nair, Sankar

35

Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization and thermodynamic processes  

E-Print Network [OSTI]

643 Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization of oxygen defects in CoO using classical simulations. The charge localization in the oxygen vacancy has]. The defect concentration in the oxygen sublattice is several orders of magnitude smaller, but never- theless

Paris-Sud XI, Université de

36

Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir(V), Ir(VI), or Ir(VII)?  

E-Print Network [OSTI]

Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir: Density functional calculations are used to revisit the reaction mechanism of water oxidation catalyzed oxidation at higher oxidation state even though it can also promote O-O bond formation. Therefore, [(bpy

Liao, Rongzhen

37

Cisplatin upregulates mitochondrial nitric oxide synthase and peroxynitrite formation to promote renal injury  

SciTech Connect (OSTI)

The mitochondria are a critical target for cisplatin-associated nephrotoxicity. Though nitric oxide formation has been implicated in the toxicity of cisplatin, this formation has not so far been related to a possible activation of mitochondrial nitric oxide synthase (mNOS). We show here that the upregulation of oxide mNOS and peroxynitrite formation in cisplatin treatment are key events that influence the development of the harmful parameters described in cisplatin-associated kidney failure. We confirm this by isolating the mitochondrial fraction of the kidney and across different access routes such as the use of a specific inhibitor of neuronal NOS, L-NPA, a peroxynitrite scavenger, FeTMPyP, and a peroxynitrite donor, SIN-1. The in vitro studies corroborated the information obtained in the in vivo experiments. The administration of cisplatin reveals a clear upregulation in the transcription of neuronal NOS and an increase in the levels of nitrites in the mitochondrial fractions of the kidneys. The upregulated transcription directly affects the cytoskeleton structure and the apoptosis. The inhibition of neuronal NOS reduces the levels of nitrites, cell death, and cytoskeleton derangement. Peroxynitrite is involved in the mechanism promoting the NOS transcription. In addition, in controls SIN-1 imitates the effects of cisplatin. In summary, we demonstrate that upregulation of mNOS in cisplatin treatment is a key component in both the initiation and the spread of cisplatin-associated damage in the kidney. Furthermore, peroxynitrite formation is directly involved in this process.

Jung, Michaela [Department of Ischemia and Inflammation, Instituto de Investigaciones Biomedicas, IIBB-CSIC-IDIBAPS, C/ Rossello, 161, 7a, 08036 Barcelona (Spain); Hotter, Georgina; Vinas, Jose Luis [Department of Ischemia and Inflammation, Instituto de Investigaciones Biomedicas, IIBB-CSIC-IDIBAPS, C/ Rossello, 161, 7a, 08036 Barcelona (Spain); CIBER-BBN, Networking Center on Bioengineering, Biomaterials and Nanomedicine, Barcelona (Spain); Sola, Anna [Department of Ischemia and Inflammation, Instituto de Investigaciones Biomedicas, IIBB-CSIC-IDIBAPS, C/ Rossello, 161, 7a, 08036 Barcelona (Spain); CIBER-BBN, Networking Center on Bioengineering, Biomaterials and Nanomedicine, Barcelona (Spain)], E-mail: asmbam@iibb.csic.es

2009-01-15T23:59:59.000Z

38

Duplex Oxide Formation during Transient Oxidation of Cu-5%Ni(001) Investigated by In situ UHV-TEM and XPS  

SciTech Connect (OSTI)

The transient oxidation stage of a model metal alloy thin film was characterized with in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and analytic high-resolution TEM. We observed the formations of nanosized NiO and Cu{sub 2}O islands when Cu-5a5%Ni(100) was exposed to oxygen partial pressure, pO{sub 2} = 1 x 10{sup -4} Torr and various temperatures in situ. At 350 C epitaxial Cu{sub 2}O islands formed initially and then NiO islands appeared on the surface of the Cu{sub 2}O island, whereas at 750 C NiO appeared first. XPS and TEM was used to reveal a sequential formation of NiO and then Cu{sub 2}O islands at 550 C. The temperature-dependant oxide selection may be due to an increase of the diffusivity of Ni in Cu with increasing temperature.

Yang, J.C.; Starr, D.; Kang, Y.; Luo, L.; Tong, X.; Zhou, G.

2012-05-20T23:59:59.000Z

39

Effects of boundaries on pattern formation: Catalytic oxidation of CO on platinum  

SciTech Connect (OSTI)

The effect of boundaries on pattern formation was studied for the catalytic oxidation of carbon monoxide on platinum surfaces. Photolithography was used to create microscopic reacting domains on polycrystalline foils and single-crystal platinum (110) surfaces with inert titanium overlayers. Certain domain geometries give rise to patterns that have not been observed on the untreated catalyst and bring to light surface mechanisms that have no analog in homogeneous reaction-diffusion systems.

Graham, M.D. (Univ. of Wisconsin, Madison (United States)); Kevrekidis, I.G. (Princeton Univ., NJ (United States)); Asakura, K.; Lauterbach, J.; Krischer, K.; Rotermund, H.H.; Ertl, G. (Fritz-Haber-Institut de Max-Planck-Gesellschaft, Berlin (Germany))

1994-04-01T23:59:59.000Z

40

Thermodynamics of Uranyl Minerals: Enthalpies of Formation of Uranyl Oxide Hydrates  

SciTech Connect (OSTI)

The enthalpies of formation of seven uranyl oxide hydrate phases and one uranate have been determined using high-temperature oxide melt solution calorimetry: [(UO{sub 2}){sub 4}O(OH){sub 6}](H{sub 2}O){sub 5}, metaschoepite; {beta}-UO{sub 2}(OH){sub 2}; CaUO{sub 4}; Ca(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}(H{sub 2}O){sub 8}, becquerelite; Ca(UO{sub 2}){sub 4}O{sub 3}(OH){sub 4}(H{sub 2}O){sub 2}; Na(UO{sub 2})O(OH), clarkeite; Na{sub 2}(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}(H{sub 2}O){sub 7}, the sodium analogue of compreignacite and Pb{sub 3}(UO{sub 2}){sub 8}O{sub 8}(OH){sub 6}(H{sub 2}O){sub 2}, curite. The enthalpy of formation from the binary oxides, {Delta}H{sub f-ox}, at 298 K was calculated for each compound from the respective drop solution enthalpy, {Delta}H{sub ds}. The standard enthalpies of formation from the elements, {Delta}H{sub f}{sup o}, at 298 K are -1791.0 {+-} 3.2, -1536.2 {+-} 2.8, -2002.0 {+-} 3.2, -11389.2 {+-} 13.5, -6653.1 {+-} 13.8, -1724.7 {+-} 5.1, -10936.4 {+-} 14.5 and -13163.2 {+-} 34.4 kJ mol{sup -1}, respectively. These values are useful in exploring the stability of uranyl oxide hydrates in auxiliary chemical systems, such as those expected in U-contaminated environments.

K. Kubatko; K. Helean; A. Navrotsky; P.C. Burns

2005-05-11T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Third phase formation in nitric acid extraction by n-octyl(phenyl)-n,n-diisobutylcarbamoylmethylphosphine oxide  

SciTech Connect (OSTI)

The third phase formation was studied as a function of n-octyl(phenyl)-N,N-diisobutylcarbamoylmethylphosphine oxide (CMPO) and tri-n-butyl phosphate (TBP) concentrations and temperature in the extraction of nitric acid. The concentration fractions of CMPO and TBP in the second and the third phases were determined by gas chromatography. Both CMPO and TBP were found to be enriched in the third phase. The concentrations of nitric acid in the second and the third phases relatively agreed with the calculated concentrations based on the extraction equilibrium constants of nitric acid by CMPO and TBP. The extraction of Np with the third phase formation was also discussed. 21 refs., 4 figs., 3 tabs.

Nagasaki, S.; Wisnubroto, D.S.; Enokida, Y.; Suzuki, A. (Univ. of Tokyo (Japan))

1994-03-01T23:59:59.000Z

42

On the phase formation of sputtered hafnium oxide and oxynitride films  

SciTech Connect (OSTI)

Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 16, D-52056 Aachen (Germany); Konstantinidis, S. [Laboratoire de Chimie Inorganique et Analytique, Universite de Mons, Avenue Copernic 1, 7000 Mons (Belgium); Renaux, F.; Cossement, D. [Materia Nova Research Center, Avenue Copernic 1, 7000 Mons (Belgium); Munnik, F. [Forschungszentrum Dresden Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany)

2010-07-15T23:59:59.000Z

43

Anti-atherosclerotic potential of gossypetin via inhibiting LDL oxidation and foam cell formation  

Science Journals Connector (OSTI)

Abstract Gossypetin, a flavone originally isolated from Hibiscus species, has been shown to possess antioxidant, antimicrobial, and antimutagenic activities. Here, we investigated the mechanism(s) underlying the anti-atherosclerotic potential of gossypetin. 1,1-Diphenyl-2-picrylhydrazyl (DPPH) scavenging activity assay showed that the addition of >50?M of gossypetin could scavenge over 50% of DPPH radicals. The inhibitory effects of gossypetin on the lipid and protein oxidation of LDL were defined by thiobarbituric acid reactive substance (TBARS) assay, the relative electrophoretic mobility (REM) of oxidized LDL (ox-LDL), and fragmentation of apoB in the Cu2+-induced oxidation of LDL. Gossypetin showed potential in reducing ox-LDL-induced foam cell formation and intracellular lipid accumulation, and uptake ability of macrophages under non-cytotoxic concentrations. Molecular data showed that these influences of gossypetin might be mediated via peroxisome proliferator-activated receptor ? (PPAR?)/liver-X receptor ? (LXR?)/ATP-binding cassette transporter A1 (ABCA1) and PPAR?/scavenger receptor CD36 pathways, as demonstrated by the transfection of PPAR? siRNA or PPAR? expression vector. Our data implied that gossypetin regulated the PPAR signals, which in turn led to stimulation of cholesterol removal from macrophages and delay atherosclerosis. These results suggested that gossypetin potentially could be developed as an anti-atherosclerotic agent.

Jing-Hsien Chen; Chia-Wen Tsai; Chi-Ping Wang; Hui-Hsuan Lin

2013-01-01T23:59:59.000Z

44

Lithotrophic iron-oxidizing bacteria produce organic stalks to control mineral growth: implications for biosignature formation  

SciTech Connect (OSTI)

Neutrophilic Fe-oxidizing bacteria (FeOB) are often identified by their distinctive morphologies, such as the extracellular twisted ribbon-like stalks formed by Gallionella ferruginea or Mariprofundus ferrooxydans. Similar filaments preserved in silica are often identified as FeOB fossils in rocks. Although it is assumed that twisted iron stalks are indicative of FeOB, the stalk's metabolic role has not been established. To this end, we studied the marine FeOB M. ferrooxydans by light, X-ray and electron microscopy. Using time-lapse light microscopy, we observed cells excreting stalks during growth (averaging 2.2 {micro}m h(-1)). Scanning transmission X-ray microscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy show that stalks are Fe(III)-rich, whereas cells are low in Fe. Transmission electron microscopy reveals that stalks are composed of several fibrils, which contain few-nanometer-sized iron oxyhydroxide crystals. Lepidocrocite crystals that nucleated on the fibril surface are much larger ({approx}100 nm), suggesting that mineral growth within fibrils is retarded, relative to sites surrounding fibrils. C and N 1s NEXAFS spectroscopy and fluorescence probing show that stalks primarily contain carboxyl-rich polysaccharides. On the basis of these results, we suggest a physiological model for Fe oxidation in which cells excrete oxidized Fe bound to organic polymers. These organic molecules retard mineral growth, preventing cell encrustation. This model describes an essential role for stalk formation in FeOB growth. We suggest that stalk-like morphologies observed in modern and ancient samples may be correlated confidently with the Fe-oxidizing metabolism as a robust biosignature.

Chan, Clara S; Fakra, Sirine C; Emerson, David; Fleming, Emily J; Edwards, Katrina J

2011-07-01T23:59:59.000Z

45

East Gate  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

East East Gate to: Rt. 59 Fermilab Village Main Entrance B u tt e r fi e ld R d . to: Farnsworth Ave, I-88 Kirk Rd. Site 56 Site 55 Buffalo Farm Lederman Science Center (Public Welcome) Prairie Trails Dog Training Area Nature Area Lake Law A.E. Sea Technical Division Illinois Accelerator Research Center Feynman Computing Center Muon Delivery Ring Main Injector Tevatron Test Accelerators Site 37 Site 39 Site 38 Neutrino Experiments Silicon Detector Facility Test Beam Facility DAB Site 50 Wilson Hall & Ramsey Auditorium (Public Welcome) Wilson St. Gate (Deliveries, Employees) NML CMTF A 1 R D D R D B RD S E O LA R D B A T A V I A R D E WILSON ST WILSON ST P IN E S T P O W E R L I N E R D N E O LA R D MCCHESNEY RD A B C D E 5 4 3 2 1 ´ 0 0.5 1 0.25 Miles Trails Public Areas Buildings Roads/Parking Ponds Fermi National Accelerator Laboratory 2013 Fermilab Site Map

46

Observation of (55) Surface Reconstruction on Pure Silicon and its Stability Against Native-Oxide Formation  

Science Journals Connector (OSTI)

We report the observation of a (55) reconstruction on the pure Si (111) surface, which is induced and stabilized by a tensile strain. The stabilization is so strong that the reconstruction survives extended exposure to air and the formation of a native oxide layer. Modeling of experimental high-resolution transmission-electron-microscope profile images indicates that the native oxide is ordered. The (55) reconstruction can also be induced at an initially unreconstructed Si-oxide interface by application of tension and appropriate annealing.

A. Ourmazd; D. W. Taylor; J. Bevk; B. A. Davidson; L. C. Feldman; J. P. Mannaerts

1986-09-15T23:59:59.000Z

47

The formation of double-row oxide stripes during the initial oxidation of NiAl(100)  

SciTech Connect (OSTI)

The initial growth of ultrathin aluminum oxide film during the oxidation of NiAl(100) was studied with scanning tunneling microscopy. Our observations reveal that the oxide film grows initially as pairs of a double-row stripe structure with a lateral size equal to the unit cell of ?-Al{sub 2}O{sub 3}. These double-row stripes serve as the very basic stable building units of the ordered oxide phase for growing thicker bulk-oxide-like thin films. It is shown that the electronic properties of these ultrathin double-row stripes do not differ significantly from that of the clean NiAl surface; however, the thicker oxide stripes show a decreased conductivity.

Qin, Hailang; Zhou, Guangwen [Department of Mechanical Engineering and Multidisciplinary Program in Materials Science and Engineering, State University of New York, Binghamton, New York 13902 (United States)] [Department of Mechanical Engineering and Multidisciplinary Program in Materials Science and Engineering, State University of New York, Binghamton, New York 13902 (United States)

2013-08-28T23:59:59.000Z

48

Effect of Surface Roughness of Steels on Oxide Layer Formation in a Liquid Lead-Bismuth Flow  

SciTech Connect (OSTI)

Self-healed oxide layer formation on steel surfaces in liquid lead bismuth (Pb-Bi) may be effective to improve the compatibility problem for the development of the Pb-Bi cooled FBR and the ADS with a PB-Bi target. The growth, stability and property of the oxide layer may depend on the roughness of the substrate surface. The effect of convex part and dent part of the steel surfaces on the property of the oxide layer in a Pb-Bi flow was investigated for the steels which had the surface of smooth, rough and their middle roughness. The steels were exposed into a Pb- Bi flow at the temperature of 550 deg. C, the temperature difference of 150 deg. C, the flow velocity of 1 m/s and the oxygen concentration of 1.7x10{sup -8} wt% for 500 and 1,000 hours. The results showed that the initial surface roughness influenced on the oxide layer formation during the exposure. The oxide layer was cracked at the convex part of the surface. On the contrary, few cracks existed and the oxide layer remained at the dent part. That indicated thickened oxide layer caused stress due to the oxide growth, and the stress concentrated at the convex part. Few cracks appeared in a compact oxide layer which was formed on the rough surface of 9Cr steel and detached from the substrate. This was possibly caused by the stop of oxide layer growth since a metal element was not supplied from the substrate. (authors)

KONDO, Masatoshi [Tokyo Institute of Technology, Department of Nuclear Engineering 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8550 (Japan); TAKAHASHI, Minoru [Tokyo Institute of Technology, Research Laboratory for Nuclear Reactors, 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8550 (Japan); YOSHIDA, Susumu [Tokyo Institute of Technology, Research Laboratory for Nuclear Reactors, 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8550 (Japan); SAWADA, Naoki [Tokyo Institute of Technology, Research Laboratory for Nuclear Reactors, 2-12-1, O-okayama, Meguro-ku, Tokyo, 152-8550 (Japan)

2004-07-01T23:59:59.000Z

49

Thermally deposited Ag-doped CdS thin film transistors with high-k rare-earth oxide Nd2O3 as gate dielectric  

Science Journals Connector (OSTI)

The performance of thermally deposited CdS thin film transistors doped with Ag has been reported. Ag-doped CdS thin films have been prepared using chemical...2O3 has been used as gate insulator. The thin film tra...

P. Gogoi

2013-03-01T23:59:59.000Z

50

Gating of Permanent Molds for ALuminum Casting  

SciTech Connect (OSTI)

This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

David Schwam; John F. Wallace; Tom Engle; Qingming Chang

2004-03-30T23:59:59.000Z

51

Conducting oxide formation and mechanical endurance of potential solid-oxide fuel cell interconnects in coal syngas environment  

SciTech Connect (OSTI)

The oxidation properties of potential SOFCs materials Crofer 22 APU, Ebrite and Haynes 230 exposed in coal syngas at 800 C for 100 h were studied. The phases and surface morphology of the oxide scales were characterized by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray analysis (EDX). The mechanical endurance and electrical resistance of the conducting oxides were characterized by indentation and electrical impedance, respectively. It was found that the syngas exposure caused the alloys to form porous oxide scales, which increased the electrical resistant and decreased the mechanical stability. As for short-term exposure in syngas, neither carbide nor metal dusting was found in the scales of all samples.

Liu, Kejia; Luo, Junhang; Johnson, Christopher; Liu, Xingbo; Lang, J.; Mao, S.X.

2008-08-15T23:59:59.000Z

52

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network [OSTI]

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

53

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

SciTech Connect (OSTI)

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

54

The effect of native oxide on ion-sputtering-induced nanostructure formation on GaSb surfaces  

SciTech Connect (OSTI)

We have investigated the influence of native oxides on ion-sputtering-induced nanostructure formation on GaSb using in situ low energy ion scattering spectroscopy (LEISS) and X-ray photoelectron spectroscopy (XPS). Comparing an oxygen-free sample with a native oxide sample, LEISS and XPS reveal the effect of oxygen in generating higher surface Ga fractions during early stages (fluences of 1 Multiplication-Sign 10{sup 15}-1 Multiplication-Sign 10{sup 16} cm{sup -2}) of low energy (<100 eV) Ar+ irradiation. Enhanced surface Ga and Ga{sub 2}O{sub 3} fractions were also observed on 'oxide free' samples exposed to air following irradiation. The results suggest preferential Ga oxidation and segregation on the top of the amorphous layer if oxygen is present on the surface. In addition, the native oxide also increases the fluence threshold for nanopatterning of GaSb surfaces by almost a factor of four during low energy irradiation.

El-Atwani, Osman [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Allain, J. P. [School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Suslova, Anastassiya [School of Nuclear Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-12-17T23:59:59.000Z

55

Atmospheric fate of OH initiated oxidation of terpenes. Reaction mechanism of ?-pinene degradation and secondary organic aerosol formation  

Science Journals Connector (OSTI)

This paper studies the reaction products of ?-pinene, ?-pinene, sabinene, 3-carene and limonene with OH radicals and of ?-pinene with ozone using FT-IR spectroscopy for measuring gas phase products and HPLC-MS-MS to measure products in the aerosol phase. These techniques were used to investigate the secondary organic aerosol (SOA) formation from the terpenes. The gas phase reaction products were all quantified using reference compounds. At low terpene concentrations (0.92.1ppm), the molar yields of gas phase reaction products were: HCHO 1692%, HCOOH 1054% (OH source: H2O2, 625ppm); HCHO 127148%, HCOOH 46% (OH source: CH3ONO, 58ppm). At high terpene concentrations (4.113.2ppm) the results were: HCHO 927%, HCOOH 1523%, CH3(CO)CH3 014%, CH3COOH 05%, nopinone 24% (only from ?-pinene oxidation), limona ketone 61% (only from limonene oxidation), pinonaldehyde was identified during ?-pinene degradation (OH source H2O2, 2330ppm); HCHO 76183%, HCOOH 1215%, CH3(CO)CH3 012%, nopinone 17% (from ?-pinene oxidation), limona ketone 48% (from limonene oxidation), pinonaldehyde was identified during ?-pinene degradation (OH source CH3ONO, 1416ppm). Pinic acid, pinonic acid, limonic acid, limoninic acid, 3-caric acid, 3-caronic acid and sabinic acid were identified in the aerosol phase. On the basis of these results, we propose a formation mechanism for pinonic and pinic acid in the aerosol phase explaining how degradation products could influence SOA formation and growth in the troposphere.

Vito Librando; Giuseppe Tringali

2005-01-01T23:59:59.000Z

56

PII S0016-7037(98)00136-7 The kinetics of mixed Ni-Al hydroxide formation on clay and aluminum oxide minerals  

E-Print Network [OSTI]

PII S0016-7037(98)00136-7 The kinetics of mixed Ni-Al hydroxide formation on clay and aluminum. This finding indicates that the dissolution of clay and aluminum oxide minerals can be promoted by metal ions

Sparks, Donald L.

57

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors  

E-Print Network [OSTI]

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

2014-04-08T23:59:59.000Z

58

Organic Aerosol Formation from Photochemical Oxidation of Diesel Exhaust in a Smog Chamber  

Science Journals Connector (OSTI)

Diluted exhaust from a diesel engine was photo-oxidized in a smog chamber to investigate secondary organic aerosol (SOA) production. Photochemical aging rapidly produces significant SOA, almost doubling the organic aerosol contribution of primary ...

Emily A. Weitkamp; Amy M. Sage; Jeffrey R. Pierce; Neil M. Donahue; Allen L. Robinson

2007-09-11T23:59:59.000Z

59

Detailed kinetic study of anisole pyrolysis and oxidation to understand tar formation during biomass  

E-Print Network [OSTI]

biomass combustion and gasification Milena Nowakowska, Olivier Herbinet, Anthony Dufour, Pierre. Methoxyphenols are one of the main precursors of PAH and soot in biomass combustion and gasification. Keywords: Anisole; Pyrolysis; Oxidation; Tars; Biomass; Kinetic modeling Corresponding author

Paris-Sud XI, Université de

60

Ge-nanocluster formation in Ge-doped polysilicon films under oxidation and heat treatment  

Science Journals Connector (OSTI)

An experimental investigation is conducted into the formation Ge nanoclusters by heat treatment of germanosilicate-glass... x Ge y O ...

A. A. Kovalevsky; A. S. Strogova; D. V. Plyakin

2009-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Quantitative X-ray microanalysis of submicron carbide formation in chromium (III) oxide rich scale  

SciTech Connect (OSTI)

This paper discusses the chemical microanalysis techniques adapted to identify the precipitates that form on the surface of, or within, the oxide scale of a Fe-22Cr ferritic steel during exposure to a carbon-monoxide rich environment at 750C for 800 hours. Examination of oxidized test coupons revealed the presence of a fiber like structure at the surface, shown in figure 1. Other studies have reported that these structures are carbon precipitates.

Collins, W.K.; Ziomek-Moroz, M.; Holcomb, G.R.; Danielson, P.; Hunt, A.H

2007-08-01T23:59:59.000Z

62

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 0.1 eV and valence band offset of 3.35 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

63

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

64

Simulation of hardened layer formation at micro-arc oxidation of aluminum specimens  

Science Journals Connector (OSTI)

In this paper, some model representations on a process of hardened surface layer formation are presented; they were developed on the basis of the analysis of physical processes that occur in the course of micro-arc

N. Yu. Dudareva

2008-09-01T23:59:59.000Z

65

Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation  

SciTech Connect (OSTI)

Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

Du, W.; Su, D.; Wang, Q.; Frenkel, A.I.; Teng, X.

2011-01-11T23:59:59.000Z

66

Optical NAND gate  

SciTech Connect (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

67

Theoretical model for methanol formation from CO and H/sub 2/ on zinc oxide surfaces  

SciTech Connect (OSTI)

Models are developed for the polar (0001) and nonpolar (1010) surfaces of ZnO in order to consider methanol formation from adsorbed carbon monoxide and hydrogen atoms. The heats of adsorption of H/sub x/CO and OH/sub x/CO (x = 0-3) species involved in methanol formation are computed to determine the enthalpy changes of reaction. Reaction sequences involving formyl or formate intermediates are considered. The reaction mechanism is catalyzed by the Cu/sup +/ to proceed through a methoxy intermediate on Cu/sup +//ZnO with a lower of the energy pathway. The ZnO surfaces are poor donors and function primarily as acceptors of electron density from CO. The donor role of Cu/sup +/ is demonstrated on the polar surface by increasing the heat of adsorption of acceptor adspecies and decreasing the heat of adsorption of donor adspecies. 22 references, 8 figures, 4 tables.

Baetzold, R.C.

1985-09-12T23:59:59.000Z

68

Optical NOR gate  

DOE Patents [OSTI]

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-09-06T23:59:59.000Z

69

Mixture Preparation and Nitric Oxide Formation in a GDI Engine studied by Combined Laser Diagnostics and Numerical Modeling  

SciTech Connect (OSTI)

Through the combination of advanced imaging laser diagnostics with multi-dimensional computer models, a new understanding of the performance of direct-injection gasoline engines is pursuit. The work focuses on the fuel injection process, the breakup of the liquid into a fine spray and the mixing of the fuel with the in-cylinder gases. Non-intrusive laser diagnostics will be used to measure the spatial distribution of droplets and vaporized fuel with very high temporal resolution. These data along with temperature measurements will be used to validate a new spray breakup model for gasoline direct-injection. Experimental data on near wall fuel distributions will be used for comparison with a model that predicts the spray-wall interaction and the dynamics of the liquid film on the surface. Quantitative measurements of local nitric oxide concentrations inside the combustion chamber will provide a critical test for a numerical simulation of the nitric oxide formation process. This model is based on a modified flamelet approach and will be used to study the effects of exhaust gas recirculation.

Volker Sick; Dennis N. Assanis

2002-11-27T23:59:59.000Z

70

Cellular Gate Technology  

E-Print Network [OSTI]

We propose a biochemically plausible mechanism for constructing digital logic signals and gates of significant complexity within living cells. These mechanisms rely largely on co-opting existing biochemical machinery and ...

Knight, Thomas F.

1998-01-05T23:59:59.000Z

71

Contributions Of Stress And Oxidation On The Formation Of Whiskers In Pb-Free Solders  

SciTech Connect (OSTI)

This report summarizes the research activities of WP-1754. The study focusses on the environmental factors influencing formation of lead free whiskers on electrodeposited tin coatings over copper (or copper containing) substrates. Much of the initial results are summarized in an interim report. From the initial results, two main areas were chosen to be the focus of additional research: the demonstration of effects of elastic stress state in the nucleation of whiskers and the confirmation of the effect of oxygen/nitrogen ratio in the formation of whiskers. Different levels of elastic stress were induced with the incorporation of a custom designed fixture that loaded the substrates in a four-point bending configuration and were maintained in an environmental chamber under conditions deemed favorable for whisker growth. The results show that induced elastic stress slightly increased the concentration of nucleation sites of whiskers. The effects of oxygen content were studied by aging substrates in gas vials of varying absolute pressure and different oxygen/nitrogen ratios. The concentration of whiskers were measured and appear to be sensitive to absolute pressure but are not sensitive to oxygen content (as previously observed).

Duncan, A. J.; Hoffman, E. N.

2014-03-25T23:59:59.000Z

72

Advanced insulated gate bipolar transistor gate drive  

DOE Patents [OSTI]

A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

2009-08-04T23:59:59.000Z

73

Mechanisms of Oxide Scale Formation on Ferritic Interconnect Steel in Simulated Low and High pO2 Service Environments of Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

The Laves phase strengthened ferritic steel Crofer 22 H has recently been proposed as construction material for interconnects in solid oxide fuel cells (SOFCs). In the present study, the oxidation kinetics of ...

L. Niewolak; D. J. Young; H. Hattendorf; L. Singheiser

2014-08-01T23:59:59.000Z

74

Global reduced mechanisms for methane and hydrogen combustion with nitric oxide formation constructed with CSP data  

Science Journals Connector (OSTI)

Reduced mechanisms for methane-air and hydrogen-air combustion including NO formation have been constructed with the computational singular perturbation (CSP) method using the fully automated algorithm described by Massias et al. The analysis was performed on solutions of unstrained adiabatic premixed flames with detailed chemical kinetics described by GRI 2.11 for methane and a 71-reaction mechanism for hydrogen including NOx formation. A 10-step reduced mechanism for methane has been constructed which reproduces accurately laminar burning velocities, flame temperatures and mass fraction distributions of major species for the whole flammability range. Many steady-state species are also predicted satisfactorily. This mechanism is an improvement over the seven-step set of Massias et al, especially for rich flames, because the use of HCNO, HCN and C2H2 as major species results in a better calculation of prompt NO. The present 10-step mechanism may thus also be applicable to diffusion flames. A five-step mechanism for lean and hydrogen-rich combustion has also been constructed based on a detailed mechanism including thermal NO. This mechanism is accurate for a wide range of the equivalence ratio and for pressures as high as 40 bar. For both fuels, the CSP algorithm automatically pointed to the same steady-state species as those identified by laborious analysis or intuition in the literature and the global reactions were similar to well established previous methane-reduced mechanisms. This implies that the method is very well suited for the study of complex mechanisms for heavy hydrocarbon combustion.

A Massias; D Diamantis; E Mastorakos; D A Goussis

1999-01-01T23:59:59.000Z

75

Iron-Catalyzed Dioxygen-Driven CC Bond Formation: Oxidative Dearomatization of 2-Naphthols with Construction of a Chiral Quaternary Stereocenter  

Science Journals Connector (OSTI)

Iron(salan) complex 1 was found to catalyze the oxidative dearomatization of 1-substituted 2-naphthols with the formation of an all-carbon quaternary stereocenter in air in the presence of nitroalkanes, to afford the corresponding cyclic enones with high ...

Takuya Oguma; Tsutomu Katsuki

2012-11-27T23:59:59.000Z

76

Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications  

SciTech Connect (OSTI)

We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

1999-12-06T23:59:59.000Z

77

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)  

SciTech Connect (OSTI)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4??3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

2014-04-07T23:59:59.000Z

78

Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature and by-products formation  

E-Print Network [OSTI]

Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature efficiency together with the catalyst activation temperature when a Diesel Oxidation Catalyst (DOC) is placed the advantageous plasma catalyst coupling effect on the lowering of the catalyst activation temperature

Paris-Sud XI, Université de

79

Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance  

E-Print Network [OSTI]

the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

Lee, Jong Duk

80

Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors  

SciTech Connect (OSTI)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Chen Yenting; Zhao Han; Wang Yanzhen; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

2010-06-21T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

BILL GATES, AIDS GIVING, AND TAX REBATES  

Science Journals Connector (OSTI)

BILL GATES, AIDS GIVING, AND TAX REBATES ... Gates Foundation's support for global health inspires ideas on how to spend the tax rebate ...

PAMELA S. ZURER

2001-07-30T23:59:59.000Z

82

Developing Language Processing Components with GATE  

E-Print Network [OSTI]

Developing Language Processing Components with GATE (a User Guide) For GATE version 3 beta 1 (July.3 Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 [D] Get Started

Maynard, Diana

83

Hafnium silicide formation on Si(100) upon annealing  

SciTech Connect (OSTI)

High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

Siervo, A. de [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Laboratorio Nacional de Luz Sincrotron, Caixa Postal 6192, 13084-971, Campinas, Sao Paulo (Brazil); Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G. [Instituto de Fisica 'Gleb Wataghin', Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970, Campinas, Sao Paulo (Brazil)

2006-08-15T23:59:59.000Z

84

Ligand-gated Diffusion Across the Bacterial Outer Membrane  

SciTech Connect (OSTI)

Ligand-gated channels, in which a substrate transport pathway is formed as a result of the binding of a small-molecule chemical messenger, constitute a diverse class of membrane proteins with important functions in prokaryotic and eukaryotic organisms. Despite their widespread nature, no ligand-gated channels have yet been found within the outer membrane (OM) of Gram-negative bacteria. Here we show, using in vivo transport assays, intrinsic tryptophan fluorescence and X-ray crystallography, that high-affinity (submicromolar) substrate binding to the OM long-chain fatty acid transporter FadL from Escherichia coli causes conformational changes in the N terminus that open up a channel for substrate diffusion. The OM long-chain fatty acid transporter FadL from E. coli is a unique paradigm for OM diffusion-driven transport, in which ligand gating within a {beta}-barrel membrane protein is a prerequisite for channel formation.

B Lepore; M Indic; H Pham; E Hearn; D Patel; B van den Berg

2011-12-31T23:59:59.000Z

85

Gated SIT vidicon streak tube  

SciTech Connect (OSTI)

A recently developed prototype streak tube designed to produce high gain and resolution by incorporating the streak and readout functions in one envelope thereby minimizing photon-to-change transformations and eliminating external coupling losses is presented. The tube is based upon a grid-gated Silicon-Intensified-Target Vidicon (SITV) with integral Focus Projection Scan (FPS) TV readout. Demagnifying electron optics (m=0.63) in the image section map the 40-mm-diameter photocathode image unto a 25-mm-diameter silicon target where gains greater than or equal to10/sup 3/ are achieved with only 10 KV accelerating voltage. This is compared with much lower gains (approx.50) at much higher voltages (approx.30 KV) reported for streak tubes using phosphor screens. Because SIT technology is well established means for electron imaging in vacuum, such fundamental problems as ''backside thinning'' required for electron imaging unto CCDs do not exist. The high spatial resolution (approx.30 lp/mm), variable scan formats, and high speed electrostatic deflection (250 mm/sup 2/ areas are routinely rastered with 256 scan lines in 1.6 ms) available from FPS readout add versatility not available in CCD devices. Theoretical gain and spatial resolution for this design (developed jointly by Los Alamos National Laboratory and General Electric Co.) are compared with similar calculations and measured data obtained for RCA 73435 streaks fiber optically coupled to (1) 25-mm-diameter SIT FPS vidicons and (2) 40-mm-diameter MCPTs (proximity-focused microchannel plate image intensifier tubes) fiber optically coupled to 18-mm-diameter Sb/sub 2/S/sub 3/ FPS vidicons. Sweep sensitivity, shutter ratio, and record lengths for nanosecond duration (20 to 200 ns) streak applications are discussed.

Dunbar, D.L.; Yates, G.J.; Black, J.P.

1985-01-01T23:59:59.000Z

86

from Microsoft's Bill Gates. Summer  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

with backing from Microsoft's Bill Gates. Summer fun (pages 4-5) All aboard a bus or train and tour Y-12 and the Secret City. August 2012 Visit us Many phrases can be used to...

87

The Effects of Content of Zr(NO3)4 on Formation and Characteristics of Micro-arc Oxidation Coatings Formed on ZAlSi12Cu2Mg1 Surface  

Science Journals Connector (OSTI)

The aims of this work are to prepare micro-arc oxidation coatings on the surface of ZAlSi12Cu2Mg1 aluminum alloy in Na2SiO3+NaOH+Na2EDTA electrolytes with and without Zr(NO3)4 and study their formation and characteristics. The phase constituent, surface ... Keywords: Zr(NO3)4, ZAlSi12Cu2Mg1 micro-arc oxidation, ceramic coating

Ren Yanru; Liu Xiangdong; Ao Dongwei; Lu Kai; Che Guangdong

2011-01-01T23:59:59.000Z

88

Electrochemical formation of field emitters  

DOE Patents [OSTI]

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

Bernhardt, Anthony F. (Berkeley, CA)

1999-01-01T23:59:59.000Z

89

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

90

Fabrication of gated nano electron source for vacuum nanoelectronics  

Science Journals Connector (OSTI)

Abstract Many kinds of attractive new applications, such as image sensors, stationary X-ray sources, and the column-less SEM, are investigated as post field emission displays that use a gated nano electron source. The fabrication of the gated nano electron source is overviewed from the conventional method to the latest one, especially in regarding to the gate formation process. Multi-stacked gate electrode formation using an etch-back method was developed recently, which is a very attractive method for generating a focused electron beam. The traditional Spindt-type emitter fabrication method is also being improved to the one that is easier and applicable to large area substrates. Using a double-layered photoresist as a lift-off layer and using HiPIMS sputtering instead of an e-beam evaporator was proposed. Thin film-type FEA fabrication is also improved to make vertically standing thin film by ion irradiation, which is applicable for making an emitter array on a large sized substrate.

Masayoshi Nagao; Tomoya Yoshida

2015-01-01T23:59:59.000Z

91

E-Print Network 3.0 - attenuates oxidative damage Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Collection: Computer Technologies and Information Sciences 40 Charge-trapping properties of gate oxide grown on nitrogen-implanted silicon substrate Summary: Charge-trapping...

92

Mineralogical and chemical assessment of concrete damaged by the oxidation of sulfide-bearing aggregates: Importance of thaumasite formation on reaction mechanisms  

SciTech Connect (OSTI)

Damages in concrete containing sulfide-bearing aggregates were recently observed in the Trois-Rivieres area (Quebec, Canada), characterized by rapid deterioration within 3 to 5 years after construction. A petrographic examination of concrete core samples was carried out using a combination of tools including: stereomicroscopic evaluation, polarized light microscopy, scanning electron microscopy, X-ray diffraction and electron microprobe analysis. The aggregate used to produce concrete was an intrusive igneous rock with different metamorphism degrees and various proportions of sulfide minerals. In the rock, sulfide minerals were often surrounded by a thin layer of carbonate minerals (siderite). Secondary reaction products observed in the damaged concrete include 'rust' mineral forms (e.g. ferric oxyhydroxides such as goethite, limonite (FeO (OH) nH{sub 2}O) and ferrihydrite), gypsum, ettringite and thaumasite. In the presence of water and oxygen, pyrrhotite oxidizes to form iron oxyhydroxides and sulphuric acid. The acid then reacts with the phases of the cement paste/aggregate and provokes the formation of sulfate minerals. Understanding both mechanisms, oxidation and internal sulfate attack, is important to be able to duplicate the damaging reaction in laboratory conditions, thus allowing the development of a performance test for evaluating the potential for deleterious expansion in concrete associated with sulfide-bearing aggregates.

Rodrigues, A. [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada)] [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada); Duchesne, J., E-mail: josee.duchesne@ggl.ulaval.ca [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada); Fournier, B. [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada)] [Centre de Recherche sur les Infrastructures en Beton (CRIB), Universite Laval, 1065 ave de la Medecine, Quebec, QC, Canada G1V 0A6 (Canada); Durand, B. [Institut de recherche d'Hydro-Quebec (IREQ), 1740 boul. Lionel-Boulet, Varennes, QC, Canada J3X 1S1 (Canada)] [Institut de recherche d'Hydro-Quebec (IREQ), 1740 boul. Lionel-Boulet, Varennes, QC, Canada J3X 1S1 (Canada); Rivard, P. [Universite de Sherbrooke, Sherbrooke, QC, Canada J1K 2R1 (Canada)] [Universite de Sherbrooke, Sherbrooke, QC, Canada J1K 2R1 (Canada); Shehata, M. [Ryerson University, 350 Victoria Street, Toronto, ON, Canada M5B 2K3 (Canada)] [Ryerson University, 350 Victoria Street, Toronto, ON, Canada M5B 2K3 (Canada)

2012-10-15T23:59:59.000Z

93

Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition  

SciTech Connect (OSTI)

The chemistry, microstructure, and catalytic activity of thin films incorporating palladium were studied using scanning and transmission electron microscopies, X-ray diffraction, spectrophotometry, 4-point probe and catalytic tests. The films were synthesized using pulsed filtered cathodic arc and magnetron sputter deposition, i.e. techniques far from thermodynamic equilibrium. Catalytic particles were formed by thermally cycling thin films of the Pd-Pt-O system. The evolution and phase formation in such films as a function of temperature were discussed in terms of the stability of PdO and PtO2 in air. The catalytic efficiency was found to be strongly affected by the chemical composition, with oxidized palladium definitely playing a major role in the combustion of methane. Reactive sputter deposition of thin films in the Pd-Zr-Y-O system allowed us forming microstructures ranging from nanocrystalline zirconia to palladium nanoparticles embedded in a (Zr,Y)4Pd2O matrix. The sequence of phase formation is put in relation to simple thermodynamic considerations.

Anders, Andre

2010-11-26T23:59:59.000Z

94

Screening in gated bilayer graphene  

Science Journals Connector (OSTI)

The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias.

L. A. Falkovsky

2009-09-30T23:59:59.000Z

95

Decomposition of Diagonal Hermitian Quantum Gates Using Multiple-Controlled Pauli Z Gates  

E-Print Network [OSTI]

Quantum logic decomposition refers to decomposing a given quantum gate to a set of physically implementable gates. An approach has been presented to decompose arbitrary diagonal quantum gates to a set of multiplexed-rotation gates around z axis. In this paper, a special class of diagonal quantum gates, namely diagonal Hermitian quantum gates, is considered and a new perspective to the decomposition problem with respect to decomposing these gates is presented. It is first shown that these gates can be decomposed to a set that solely consists of multiple-controlled Z gates. Then a binary representation for the diagonal Hermitian gates is introduced. It is shown that the binary representations of multiple-controlled Z gates form a basis for the vector space that is produced by the binary representations of all diagonal Hermitian quantum gates. Moreover, the problem of decomposing a given diagonal Hermitian gate is mapped to the problem of writing its binary representation in the specific basis mentioned above. Moreover, CZ gate is suggested to be the two-qubit gate in the decomposition library, instead of previously used CNOT gate. Experimental results show that the proposed approach can lead to circuits with lower costs in comparison with the previous ones.

Mahboobeh Houshmand; Morteza Saheb Zamani; Mehdi Sedighi; Mona Arabzadeh

2014-05-26T23:59:59.000Z

96

Improvement of the cantilever grooveless gate  

Science Journals Connector (OSTI)

1. The grooveless multisectional gate permits closing openings of any width without dividing the conduit into se...

S. M. Slisskii; P. R. Khlopenkov; E. G. Chernenko

1976-01-01T23:59:59.000Z

97

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network [OSTI]

regarding the connections between gated community territory, safety, and crime experience, this study classifies apartment communities according to the conditions of their gating and fencing: gated communities, perceived gated communities, and non...

Kim, Suk Kyung

2006-10-30T23:59:59.000Z

98

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study  

E-Print Network [OSTI]

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/ oxide

Tobin, Roger G.

99

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Broader source: Energy.gov (indexed) [DOE]

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

100

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Broader source: Energy.gov (indexed) [DOE]

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor  

E-Print Network [OSTI]

monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures thanSulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20­600 times greater

Tobin, Roger G.

102

Golden Gate Park Marina Blvd.  

E-Print Network [OSTI]

St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 Bridge to/from Oakland C hannel St. 2nd St. Pine St. California St. California St. Clement St. Lake St From the East Bay and Oakland Airport 1. Cross Bay Bridge (I­80 West) 2. Exit on left 2A / 5th St. 3

Derisi, Joseph

103

Formation and distribution of neutral vanadium, niobium, and tantalum oxide clusters: Single photon ionization at 26.5 eV  

E-Print Network [OSTI]

. INTRODUCTION Transition metals, as well as their oxides, carbides, ni- trides, and sulfides, are unique bonds at a surface.1 Transition metal oxides are employed extensively as catalysts in the chemical. During the ionization process the metal oxide clusters are almost free of fragmentation. The most stable

Rocca, Jorge J.

104

Domain formation on oxidized graphene  

Science Journals Connector (OSTI)

Using first-principles calculations within density functional theory, we demonstrate that the adsorption of a single oxygen atom results in significant electron transfer from graphene to oxygen. This strongly disturbs the charge landscape of the C-C bonds at the proximity. Additional oxygen atoms adsorbing to graphene prefer always the C-C bonds having the highest charge density and, consequently, they have the tendency to form domain structure. While oxygen adsorption to one side of graphene ends with significant buckling, the adsorption to both sides with similar domain pattern is favored. The binding energy displays an oscillatory variation and the band gap widens with increasing oxygen coverage. While a single oxygen atom migrates over the C-C bonds on the graphene surface, a repulsive interaction prevents two oxygen adatoms from forming an oxygen molecule. Our first-principles study together with finite-temperature ab initio molecular dynamics calculations conclude that oxygen adatoms on graphene can not desorb easily without the influence of external agents.

M. Topsakal and S. Ciraci

2012-11-01T23:59:59.000Z

105

Fast Quantum Gates for Neutral Atoms  

Science Journals Connector (OSTI)

We propose several schemes for implementing a fast two-qubit quantum gate for neutral atoms with the gate operation time much faster than the time scales associated with the external motion of the atoms in the trapping potential. In our example, the large interaction energy required to perform fast gate operations is provided by the dipole-dipole interaction of atoms excited to low-lying Rydberg states in constant electric fields. A detailed analysis of imperfections of the gate operation is given.

D. Jaksch; J. I. Cirac; P. Zoller; S. L. Rolston; R. Ct; M. D. Lukin

2000-09-04T23:59:59.000Z

106

Low-temperature formation of Si O 2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process  

Science Journals Connector (OSTI)

Silicon oxide ( Si O 2 ) layers were fabricated at low temperatures ( ? 400 C ) by combining the deposition of hydrogenated amorphous Si ( a - Si : H ) with its oxidation using atmospheric pressure plasmas excited by a 150 MHz very high-frequency (VHF) power. The surface excitation by the atmospheric pressure VHF plasma was capable of reducing the temperature for the hydrogen effusion from a - Si : H . As a result a porous a - Si : H film containing a large amount of hydrogen could be transformed into a stoichiometric Si O 2 with an approximately 24% increase in oxidation rate compared with the oxidation of Si(001) at a temperature of 400 C .

Hiroaki Kakiuchi; Hiromasa Ohmi; Makoto Harada; Heiji Watanabe; Kiyoshi Yasutake

2007-01-01T23:59:59.000Z

107

Automatically closing swing gate closure assembly  

DOE Patents [OSTI]

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

108

Quantum logic gates for superconducting resonator qudits  

SciTech Connect (OSTI)

We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

Strauch, Frederick W. [Williams College, Williamstown, Massachusetts 01267 (United States)

2011-11-15T23:59:59.000Z

109

Journal Article: Gate-tunable exchange coupling between cobalt...  

Office of Scientific and Technical Information (OSTI)

Gate-tunable exchange coupling between cobalt clusters on graphene Citation Details Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors: Chen, Hua;...

110

The University of Tennessee's GATE Center for Hybrid Systems...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

The University of Tennessee's GATE Center for Hybrid Systems The University of Tennessee's GATE Center for Hybrid Systems 2009 DOE Hydrogen Program and Vehicle Technologies Program...

111

The University of Tennessee's GATE Center for Hybrid Systems...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

The University of Tennessee's GATE Center for Hybrid Systems The University of Tennessee's GATE Center for Hybrid Systems Presentation from the U.S. DOE Office of Vehicle...

112

Formation of submicron oxide widths on aluminum in the presence of keV electron beams and CO/sub 2/ or N/sub 2/O  

SciTech Connect (OSTI)

The purpose of this paper is to report the size of oxide islands or line widths that can be grown as smaller diameter electron beams are used for the oxidation. The implications of the potential lateral resolution available between oxide lines for electronic materials are discussed. The localize dioxide growth on thin Al films occurs in the presence of .5 to 10 keV electron beams and high vacuum level pressures of carbon dioxide or nitrous oxide. Auger electron spectroscopy shows saturation of the O (KLL) signal and depletion of the Al (LMM) signal after an exposure of 5000 l carbon dioxide with a 2 keV beam of 7 A/sq. cm. The oxide is spatially restricted to the beam impact region and is stable for long periods of time in vacuum. The most plausible mechanism for this oxide growth is dissociation of the carbon dioxide or the nitrous oxide by the electron beam in the region of impingement on or near the surface. Oxygen atoms thus formed can then react with the Al, and carbon monoxide or nitrogen desorbs.

Pitts, J.R.; Massopust, T.P.; Czanderna, A.W.; Kazmerski, L.L.

1986-03-01T23:59:59.000Z

113

Electrochemical formation of field emitters  

DOE Patents [OSTI]

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.

Bernhardt, A.F.

1999-03-16T23:59:59.000Z

114

Low-temperature formation of SiO{sub 2} layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process  

SciTech Connect (OSTI)

Silicon oxide (SiO{sub 2}) layers were fabricated at low temperatures ({<=}400 deg. C) by combining the deposition of hydrogenated amorphous Si (a-Si:H) with its oxidation using atmospheric pressure plasmas excited by a 150 MHz very high-frequency (VHF) power. The surface excitation by the atmospheric pressure VHF plasma was capable of reducing the temperature for the hydrogen effusion from a-Si:H. As a result, a porous a-Si:H film containing a large amount of hydrogen could be transformed into a stoichiometric SiO{sub 2} with an approximately 24% increase in oxidation rate compared with the oxidation of Si(001) at a temperature of 400 deg. C.

Kakiuchi, Hiroaki; Ohmi, Hiromasa; Harada, Makoto; Watanabe, Heiji; Yasutake, Kiyoshi [Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871 (Japan)

2007-10-15T23:59:59.000Z

115

Photochemical Oxidant Processes in the Presence of Dust: An Evaluation of the Impact of Dust on Particulate Nitrate and Ozone Formation  

Science Journals Connector (OSTI)

The influence of dust on the tropospheric photochemical oxidant cycle is studied through the use of a detailed coupled aerosol and gas-phase chemistry model. Dust is a significant component of the troposphere throughout Asia and provides a ...

Yang Zhang; Young Sunwoo; Veerabhadra Kotamarthi; Gregory R. Carmichael

1994-07-01T23:59:59.000Z

116

Formation of nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR); Musket, Ronald G. (Danville, CA); Bernhardt, Anthony F. (Berkeley, CA)

2000-01-01T23:59:59.000Z

117

Effects of Additive Elements on the Phase Formation and Morphological Stability of Nickel Monosilicide Films  

SciTech Connect (OSTI)

Alloying elements can substantially affect the formation and morphological stability of nickel monosilicide. A comprehensive study of phase formation was performed on 24 Ni alloys with varying concentrations of alloying elements. Silicide films have been used for more than 15 years to contact the source, drain and gate of state-of-the-art complementary-metal-oxide-semiconductor (CMOS) devices. In the past, the addition of alloying elements was shown to improve the transformation from the high resistivity C49 to the low resistivity C54-TiSi{sub 2} phase and to allow for the control of surface and interface roughness of CoSi{sub 2} films as well as produce significant improvements with respect to agglomeration of the films. Using simultaneous time-resolved X-ray diffraction (XRD), resistance and light scattering measurements, we follow the formation of the silicide phases in real time during rapid thermal annealing. Additions to the Ni-Si system lead to modifications in the phase formation sequence at low temperatures (metal-rich phases), to variations in the formation temperatures of NiSi and NiSi{sub 2}, and to changes in the agglomeration behavior of the films formed. Of the 24 elements studied, additions of Mo, Re, Ta and W are amongst the most efficient to retard agglomeration while elements such as Pd, Pt and Rh are most efficient to retard the formation of NiSi{sub 2}.

Lavoie,C.; Detavernier, C.; Cabral, Jr. , C.; d'Heurle, F.; Kellock, A.; Jordan-Sweet, J.; Harper, J.

2006-01-01T23:59:59.000Z

118

David A Gates | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Gates A Gates Principal Research Physicist, Stellerator Physics Lead, Advanced Projects Division, Science Focus Group Leader for Macroscopic Stability David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Gates is first author of more than a dozen research papers, including an April, 2012, paper that proposed a possible solution to a critical barrier to fusion as a source of energy for generating electricity. Interests Collisional energy transport High-frequency Alfvén waves Fast-ion energy transfer Ideal and resistive magneto-hydrodynamic stability

119

Gate potential control of nanofluidic devices  

E-Print Network [OSTI]

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

120

Digital gate pulse generator for cycloconverter control  

DOE Patents [OSTI]

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

1989-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Yuanmingyuan East Gate of Peking University  

E-Print Network [OSTI]

Dingxiangyuan Cafeteria SupermarketI Parking 32 Northeast Gate C Building C Swimming Hall East Playground and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student Affairs

Gu, Jin

122

PUBLISHED ONLINE: 31 AUGUST 2014 | DOI: 10.1038/NPHYS3049 Gate-tunable superconducting weak link and  

E-Print Network [OSTI]

to control transmission across the device, and conductance measurements are carried out with standard lock Lee, James R. Williams and David Goldhaber-Gordon* Two-dimensional electron systems in gallium they are easily modulated by voltages on nanopatterned gate electrodes. Electron systems at oxide interfaces hold

Loss, Daniel

123

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

124

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation  

SciTech Connect (OSTI)

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-01-28T23:59:59.000Z

125

Effect of Milk Protein Concentrate on Lipid Oxidation and Formation of Fishy Volatiles in Herring Mince ( Clupea harengus) during Frozen Storage  

Science Journals Connector (OSTI)

Sensory evaluation was also conducted to assess the intensity of fishy odor, and the volatiles were analyzed using static headspace gas chromatographymass spectrometry (SHGC-MS). ... Volatile analysis using SHGC-MS showed that 4% MPC was able to reduce headspace volatiles associated with fishy odor. ... Herring mince; SHGC-MS; lipid oxidation; fishy volatiles; fatty acids ...

H. J. F. Joaquin; S. Tolasa; A. C. M. Oliveira; C. M. Lee; K. H. Lee

2007-12-01T23:59:59.000Z

126

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

127

Voltage-gated Ion Channels and Gating Modifier Toxins William A. Catterall,* Sandrine Cestle,  

E-Print Network [OSTI]

;2 Abstract Voltage-gated sodium, calcium, and potassium channels generate electrical signals required and a pore loop. Their pores are formed by the S5/S6 segments and the pore loop between them and are gated and participate in calcium signaling pathways in nonexcitable cells. Because of their importance in many aspects

Paris-Sud XI, Université de

128

The Defeat of the Golden Gate Authority: Regional Planning and Local Power  

E-Print Network [OSTI]

Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

Dyble, Louise Nelson

2012-01-01T23:59:59.000Z

129

Heralded quantum gates with integrated error detection in optical cavitites  

E-Print Network [OSTI]

We propose and analyze heralded quantum gates between qubits in optical cavities. They employ an auxiliary qubit to report if a successful gate occurred. In this manner, the errors, which would have corrupted a deterministic gate, are converted into a non-unity probability of success: once successful the gate has a much higher fidelity than a similar deterministic gate. Specifically, we describe that a heralded , near-deterministic controlled phase gate (CZ-gate) with the conditional error arbitrarily close to zero and the success probability that approaches unity as the cooperativity of the system, C, becomes large. Furthermore, we describe an extension to near-deterministic N- qubit Toffoli gate with a favorable error scaling. These gates can be directly employed in quantum repeater networks to facilitate near-ideal entanglement swapping, thus greatly speeding up the entanglement distribution.

J. Borregaard; P. Kmr; E. M. Kessler; A. S. Srensen; M. D. Lukin

2015-01-05T23:59:59.000Z

130

Provably minimal energy using coordinated DVS and power gating  

Science Journals Connector (OSTI)

Both energy and execution speed can be greatly impacted by clock and power gating, nonlinear voltage scaling, and leakage energy. We address the problem of coordinated power gating and dynamic voltage scaling (DVS) to minimize the overall energy consumption ...

Nathaniel A. Conos; Saro Meguerdichian; Foad Dabiri; Miodrag Potkonjak

2014-03-01T23:59:59.000Z

131

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network [OSTI]

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

132

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 9 Accomplishments and Progress: GATE Directly Funded Students (2005-2011) GATE SCHOLAR...

133

Operating conditions of submerged gates and possibilities of improvement  

Science Journals Connector (OSTI)

1. Submerged gates, employed at high-head hydroelectric stations, do not completely meet the demands placed on t...

P. R. Khlopenkov

1971-06-01T23:59:59.000Z

134

Radar Vehicle Detection Within Four Quadrant Gate Crossings  

E-Print Network [OSTI]

Vehicle Detection System for Four-Quadrant Gate Warning Systems and Blocked Crossing Detection. Washington. . . . . Radar Vehicle Detection Within Four Quadrant Gate Crossings Dylan Horne 2014 Global Level and delay but ultimately in loss of life. Radar Vehicle Detection Within Four Quadrant Gate Crossings #12

Illinois at Urbana-Champaign, University of

135

Downhole burner systems and methods for heating subsurface formations  

DOE Patents [OSTI]

A gas burner assembly for heating a subsurface formation includes an oxidant conduit, a fuel conduit, and a plurality of oxidizers coupled to the oxidant conduit. At least one of the oxidizers includes a mix chamber for mixing fuel from the fuel conduit with oxidant from the oxidant conduit, an igniter, and a shield. The shield includes a plurality of openings in communication with the oxidant conduit. At least one flame stabilizer is coupled to the shield.

Farmayan, Walter Farman (Houston, TX); Giles, Steven Paul (Damon, TX); Brignac, Jr., Joseph Phillip (Katy, TX); Munshi, Abdul Wahid (Houston, TX); Abbasi, Faraz (Sugarland, TX); Clomburg, Lloyd Anthony (Houston, TX); Anderson, Karl Gregory (Missouri City, TX); Tsai, Kuochen (Katy, TX); Siddoway, Mark Alan (Katy, TX)

2011-05-31T23:59:59.000Z

136

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients  

SciTech Connect (OSTI)

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated beam-ON. Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be accurate if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (?43%), suboptimal gating setup (?37%), and imperfect EIC within movie (?13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties.

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)] [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States); Parikh, Parag J., E-mail: pparikh@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)

2013-03-01T23:59:59.000Z

137

Gate-controlled ultraviolet photo-etching of graphene edges  

SciTech Connect (OSTI)

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

Mitoma, Nobuhiko; Nouchi, Ryo [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)] [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

2013-11-11T23:59:59.000Z

138

Improving the fidelity of optical Zeno gates via distillation  

SciTech Connect (OSTI)

We have modeled the Zeno effect controlled-sign gate of Franson et al. [Phys. Rev. A 70, 062302 (2004)] and shown that high two-photon to one-photon absorption ratios, {kappa}, are needed for high fidelity free-standing operation. Hence we instead employ this gate for cluster state fusion, where the requirement for {kappa} is less restrictive. With the help of partially offline one-photon and two-photon distillations, we can achieve a fusion gate with unity fidelity but nonunit probability of success. We conclude that for {kappa}>2200, the Zeno fusion gate will out perform the equivalent linear optics gate.

Leung, Patrick M.; Ralph, Timothy C. [Centre for Quantum Computer Technology, Department of Physics, University of Queensland, Brisbane 4072 (Australia)

2006-12-15T23:59:59.000Z

139

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect (OSTI)

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lssem, Bjrn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany)] [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany) [Institut fr Angewandte Photophysik, Technische Universitt Dresden, George-Bhr-Strae 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

140

AgraGate Carbon Credits Corporation | Open Energy Information  

Open Energy Info (EERE)

AgraGate Carbon Credits Corporation AgraGate Carbon Credits Corporation Jump to: navigation, search Name AgraGate Carbon Credits Corporation Place Des Moines, Iowa Zip 50266 Product Offset aggregators that work with American farmers, ranchers, and private forest owners, providing clients with cash flows produced by the sale of credits. Offsets are sold on the Chicago Climate Exchange References AgraGate Carbon Credits Corporation[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. AgraGate Carbon Credits Corporation is a company located in Des Moines, Iowa . References ↑ "AgraGate Carbon Credits Corporation" Retrieved from "http://en.openei.org/w/index.php?title=AgraGate_Carbon_Credits_Corporation&oldid=341882"

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Arbitrary two-qubit computation in 23 elementary gates  

SciTech Connect (OSTI)

We address the problem of constructing quantum circuits to implement an arbitrary two-qubit quantum computation. We pursue circuits without ancilla qubits and as small a number of elementary quantum gates as possible. Our lower bound for worst-case optimal two-qubit circuits calls for at least 17 gates: 15 one-qubit rotations and 2 controlled-NOT (CNOT) gates. We also constructively prove a worst-case upper bound of 23 elementary gates, of which at most four (CNOT gates) entail multiqubit interactions. Our analysis shows that synthesis algorithms suggested in previous work, although more general, entail larger quantum circuits than ours in the special case of two qubits. One such algorithm has a worst case of 61 gates, of which 18 may be CNOT gates.

Bullock, Stephen S.; Markov, Igor L. [Department of Mathematics, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA (United States); Mathematical and Computational Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8910, USA (United States); Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue-EECS, Ann Arbor, Michigan 48109-2122, USA (United States)

2003-07-01T23:59:59.000Z

142

Gates, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gates, Oregon: Energy Resources Gates, Oregon: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.7562329°, -122.4167483° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.7562329,"lon":-122.4167483,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

143

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

E-Print Network [OSTI]

Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

Zhang, Yuanbo

2010-01-01T23:59:59.000Z

144

Penn State DOE Graduate Automotive Technology Education (Gate...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems 2011 DOE Hydrogen and Fuel Cells Program, and Vehicle Technologies Program...

145

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Office of Environmental Management (EM)

Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

146

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams GATE courses (some newly developed, some based on tailoring content in existing...

147

Self-terminating diffraction gates femtosecond X-ray nanocrystallograp...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Self-terminating diffraction gates femtosecond X-ray nanocrystallography measurements Authors: Barty, A., Caleman, C., Aquila, A., Timneanu, N., Lomb, L., White, T. A., Andreasson,...

148

Sandia National Laboratories: ECIS and i-GATE: Innovation Hub...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

149

Improved design of a deep vertical-lift gate  

Science Journals Connector (OSTI)

1. Redesigning of the framework of a deep vertical-lift gate by replacing the multibeam framework by a two-beam ...

P. R. Khlopenkov

1986-04-01T23:59:59.000Z

150

Vehicle Technologies Office: Graduate Automotive Technology Education (GATE)  

Broader source: Energy.gov [DOE]

DOE established the Graduate Automotive Technology Education (GATE) Centers of Excellence to provide future generations of engineers and scientists with knowledge and skills in advanced automotive...

151

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect (OSTI)

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

152

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect (OSTI)

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

153

Cavity-QED-based quantum phase gate  

E-Print Network [OSTI]

are detuned by an amount D from the cavity mode 1, i.e., vbc5n11D . A quantum phase gate with a p phase shift is implemented if the atom in its ground state uc& passes through the cavity such that ~1! the detuning D is equal to g2, and ~2! the interaction...- lowing. The effective Hamiltonian for the interaction, in the di- pole and rotating-wave approximations, is H5H01H1 , ~3! where H05\

Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

2003-01-01T23:59:59.000Z

154

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs.  

SciTech Connect (OSTI)

We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

Tauke-Pedretti, Anna; Overberg, Mark E.; Skogen, Erik J.; Alford, Charles Fred; Sullivan, Charles Thomas; Vawter, Gregory Allen; Peake, Gregory Merwin; Torres, David L.

2010-06-01T23:59:59.000Z

155

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature  

SciTech Connect (OSTI)

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al{sub 2}O{sub 3} gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?C.

Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

2014-10-21T23:59:59.000Z

156

Modeling gated neutron images of THD capsules  

SciTech Connect (OSTI)

Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

2010-01-01T23:59:59.000Z

157

Sizing sliding gate valves for steam service  

SciTech Connect (OSTI)

Sliding gate valves have been used in thousands of applications during the past 40 yr. While steam control is a common application for these valves, thy are also used to control other gases and liquids. The sliding gate design provides straight-through flow, which minimizes turbulence, vibration, and noise. Seats are self-cleaning and self-lapping to provide a tight, long-lasting shutoff. A correctly sized valve is essential for accurate control. Valve size should be determined by service and system requirements, not by the size of the existing pipeline. Sizing a valve on the basis of pipeline size usually results in an oversized valve and poor control. Generally, regulator size is smaller than pipe size. Whenever complete information is known (inlet pressure, outlet pressure, or pressure drop, and required flow), determine the valve flow coefficient (C{sub v}) using the equations in ANSI/ISA S75.01 or a flow sizing chart. Tables of values for various types of valves are available from manufacturers. However, when complete system requirements are not known, valve oversizing is prevented by determining the design capacity of piping downstream from the valve. The valve should not be sized to pass more flow than the maximum amount the pipe can handle at a reasonable velocity. An example calculation is given.

Bollinger, R. [Jordan Value, Cincinnati, OH (United States)

1995-11-06T23:59:59.000Z

158

Metal Oxides  

Science Journals Connector (OSTI)

Metal oxides are the class of materials having the widest application in gas sensors. This chapter presents information related to the application of various metal oxides in gas sensors designed on different p...

Ghenadii Korotcenkov

2013-01-01T23:59:59.000Z

159

Data Formats  

Science Journals Connector (OSTI)

This chapter provides a taxonomy of existing data formats for power power system analysis. These include most commonly used formats of free and proprietary software packages as well as the IEC common informati...

Federico Milano

2010-01-01T23:59:59.000Z

160

A p-cell approach to integer gate sizing  

E-Print Network [OSTI]

cell (p-cell) approach to the generation of layouts of standard gates is presented. The use of constant delay model for gate delay estimation is proposed which eliminates the need for maintaining huge volumes of delay tables in the standard cell library...

Doddannagari, Uday

2009-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS  

E-Print Network [OSTI]

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS Kambiz Rahimi, Chris Diorio, Cecilia, Seattle, Washington ABSTRACT We propose an empirical simulation model for p-channel floating-gate MOS and accurate simulation model for the synaptic devices, many of these circuits were designed using equation

Diorio, Chris

162

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

163

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

164

File Formats  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Home Page Home Page File Formats MODIS Product Subsets Output Data File Format Descriptions The MODIS product subsets for North America and Worldwide are available in several formats, which are described in the following text. MODIS Land Product ASCII Data Image Data Files in ASCII Grid Format QC-Filtered Data and Statistics Generated for this Request Land Cover Data in ASCII Grid Format Statistical Data for MODIS Land Products in Comma Separated Format Underlying BRDF Parameters Used in Generating this Request (available with Albedo MOD43B and MCD43B only) MODIS Land Product ASCII Data Description of File File Content: Data as read from MODIS Land Product HDF-EOS data files. These data are the starting point for deriving the other subset data products. Data Type: As indicated by Land Product Code (e.g., MOD15A2).

165

Utility Formation  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

amounts See detailed discussion of these standards. For more information regarding tribal utility formation, contact the Power Service Line Account Executives: Eastern Power...

166

Step-Orientation-Dependent Oxidation: From 1D to 2D Oxides  

Science Journals Connector (OSTI)

Using scanning tunneling microscopy and density functional theory, we have studied the initial oxidation of Rh(111) surfaces with two types of straight steps, having {100} and {111} microfacets. The one-dimensional (1D) oxide initially formed at the steps acts as a barrier impeding formation of the 2D oxide on the (111) terrace behind it. We demonstrate that the details of the structure of the 1D oxide govern the rate of 2D oxidation and discuss implications for oxidation of nanoparticles.

J. Klikovits; M. Schmid; L. R. Merte; P. Varga; R. Westerstrm; A. Resta; J. N. Andersen; J. Gustafson; A. Mikkelsen; E. Lundgren; F. Mittendorfer; G. Kresse

2008-12-29T23:59:59.000Z

167

Micro-mechanical logic for field produceable gate arrays  

E-Print Network [OSTI]

A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

Prakash, Manu

2005-01-01T23:59:59.000Z

168

On the Query Complexity of Perfect Gate Discrimination  

E-Print Network [OSTI]

On the Query Complexity of Perfect Gate Discrimination Giulio Chiribella1 , Giacomo Mauro D'Ariano2 queries are called at different time steps [5]. T Q C © Giulio Chiribella, Giacomo Mauro D

D'Ariano, Giacomo Mauro

169

How many copies are needed for gate discrimination?  

E-Print Network [OSTI]

How many copies are needed for gate discrimination? Giulio Chiribella1 , Giacomo Mauro D'Ariano2 Chiribella, Giacomo Mauro D'Ariano, and Martin Roetteler; licensed under Creative Commons License

D'Ariano, Giacomo Mauro

170

Parameter Mismatches, Chaos Synchronization and Fast Dynamic Logic Gates  

E-Print Network [OSTI]

By using chaos synchronization between non-identical multiple time delay semiconductor lasers with optoelectronic feedbacks, we demonstrate numerically how fast dynamic logic gates can be constructed. The results may be helpful to obtain a computational hardware with reconfigurable properties.

E. M. Shahverdiev

2009-07-02T23:59:59.000Z

171

Single-Step Implementation of Universal Quantum Gates  

SciTech Connect (OSTI)

We construct optimized implementations of the controlled-NOT and other universal two-qubit gates that, unlike many of the previously proposed protocols, are carried out in a single step. The new protocols require tunable interqubit couplings but, in return, show a significant improvement in the quality of gate operations. We make specific predictions for coupled Josephson junction qubits and compare them with the results of recent experiments.

Grigorenko, I.A.; Khveshchenko, D.V. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2005-09-09T23:59:59.000Z

172

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Submitted to the Graduate College of Texas ASSAM University in partial fulfillment of the requirement for the degree ol' MASTER OF SCIENCE May 1987... Major Subject: Electrical Engineering SELF-ALIGNED SUBMICRON GATE LENGTH GALLIUM ARSENIDE MESFET A Thesis by HSIEN-CHING HUANG Approved as to style and content by: Mark. H. Weichold (Chairman of Committee) Donald L. Parker (Member) dali L...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

173

Ultrafast gating of proximity-focused microchannel-plate intensifiers  

SciTech Connect (OSTI)

Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

Lundy, A.S.; Iverson, A.E.

1982-01-01T23:59:59.000Z

174

Accelerometer-Based method for extracting respiratory and cardiac gating information for dual gating during nuclear medicine imaging  

Science Journals Connector (OSTI)

Both respiratory and cardiac motions reduce the quality and consistency of medical imaging specifically in nuclear medicine imaging. Motion artifacts can be eliminated by gating the image acquisition based on the respiratory phase and cardiac contractions ...

Mojtaba Jafari Tadi, Tero Koivisto, Mikko Pnkl, Ari Paasio

2014-01-01T23:59:59.000Z

175

Unfamiliar oxidation states and their stabilization  

E-Print Network [OSTI]

ferrate formation. Oxidation of copper(II) hydroxide in alkaline solution with sodium hydroperoxide, Na.OOH, apparently gives copper (III) oxide.8 Determination of the voltage-current curve for a silver anode in sodium hydroxide solution gives breaks... of a knowledge of the chemical prop erties of the substance in question is made apparent by the following illustration: a compound containing silver and oxygen in equal atomic proportions may be made by the oxidation of unipositive silver...

Kleinberg, Jacob

1950-01-01T23:59:59.000Z

176

Modelling of c-C2H4O formation on grain surfaces  

Science Journals Connector (OSTI)

......Recently, Ward Price have performed experiments...surface formation of ethylene oxide starting with...the formation of ethylene oxide has been investigated by Ward Price (2011) who studied...quantity of Ward Price (2011). We also...the sensitivity of ethylene oxide fractional......

A. Occhiogrosso; S. Viti; M. D. Ward; S. D. Price

177

Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si,,001...  

E-Print Network [OSTI]

controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide/or silicides at the Si/oxide interface. Subnanometer buffer layers can prevent interface reac- tions while, also enables flexible strain relief. We observe nei- ther oxide nor silicide formation at the buried Si

Olmstead, Marjorie

178

Methane oxidation by an extremely acidophilic bacterium of the phylum Verrucomicrobia  

Science Journals Connector (OSTI)

... primarily through the microbial degradation of organic matter, but abiogenic methane emitted from seeps and geothermal areas is also a major contribution to the atmospheric budget, estimated at 4575? ... at 4575?Tg annually. Hells Gate (Tikitere), New Zealand, is a geothermal area rich in abiogenic methane. We studied methane oxidation in an area of woody ...

Peter F. Dunfield; Anton Yuryev; Pavel Senin; Angela V. Smirnova; Matthew B. Stott; Shaobin Hou; Binh Ly; Jimmy H. Saw; Zhemin Zhou; Yan Ren; Jianmei Wang; Bruce W. Mountain; Michelle A. Crowe; Tina M. Weatherby; Paul L. E. Bodelier; Werner Liesack; Lu Feng; Lei Wang; Maqsudul Alam

2007-11-14T23:59:59.000Z

179

Sensory gating in intracranial recordings The role of phase locking  

Science Journals Connector (OSTI)

For patients with schizophrenia, a deficient gating (or filtering) of sensory input has been described. One major approach to study this sensory gating is to measure event-related potentials (ERPs) in response to paired clicks. In these experiments, sensory gating is quantified as amplitude reduction of the ERP components P50 and N100 from the 1st to the 2nd stimulus. In ERP studies brain electrical signals are averaged over single trials. Alterations in phase locking might be one factor contributing to the observed deficits in sensory gating, but findings have been inconclusive as yet. In particular, the contribution of different frequency bands to the deficit required further investigation. We studied N100 gating by intracranial recordings in a sample of epilepsy patients and subdivided the group into good and poor gators of the intracranial ERP component N100. Data were evaluated by frequency specific wavelet-based phase and power analyses. Poor N100 gators had an increased phase locking in the frequency range from 6.015.1Hz after the 2nd stimulus, as compared to good gators. Other group differences were apparent already before the 2nd stimulus. Poor gators had less phase locked beta band activity (20.230.0Hz) than good gators 200315ms after the onset of the 1st stimulus. Within the group of poor gators, lower values of phase locking in this frequency range were also associated with lower gating ratios. The reduced beta band response in response to the 1st stimulus may reflect poorer memory encoding of the 1st stimulus in poor gators. This in turn might lead to increased demands to process the 2nd stimulus.

Timm Rosburg; Peter Trautner; Jrgen Fell; Karen Anne Moxon; Christian E. Elger; Nash N. Boutros

2009-01-01T23:59:59.000Z

180

Posters Single-Column Model and Cumulus Ensemble Model Simulations of GATE Data  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

3 3 Posters Single-Column Model and Cumulus Ensemble Model Simulations of GATE Data D. A. Randall and K.-M Xu Colorado State University Department of Atmospheric Science Fort Collins, Colorado Introduction Our project for the Atmospheric Radiation Measurement (ARM) Program consists of developing and demonstrating improved cloud formation parameterizations using a single-column model (SCM), a cumulus ensemble model (CEM), and ARM data. These two models can be driven with large-scale forcing (e.g., vertical motion) as observed in ARM. Each model produces a field of clouds and the associated radiation and precipitation fields. The SCM does so through its physical parameterizations, while the CEM does so by directly simulating convective cloud circulations. The improved parameterizations tested in this way will be

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

On the Role of Hadamard Gates in Quantum Circuits  

E-Print Network [OSTI]

We study a reduced quantum circuit computation paradigm in which the only allowable gates either permute the computational basis states or else apply a "global Hadamard operation", i.e. apply a Hadamard operation to every qubit simultaneously. In this model, we discuss complexity bounds (lower-bounding the number of global Hadamard operations) for common quantum algorithms : we illustrate upper bounds for Shor's Algorithm, and prove lower bounds for Grover's Algorithm. We also use our formalism to display a gate that is neither quantum-universal nor classically simulable, on the assumption that Integer Factoring is not in BPP.

Dan Shepherd

2005-08-22T23:59:59.000Z

182

Oxidation of graphite surface: the role of water  

E-Print Network [OSTI]

Based on density functional calculations, we demonstrate a significant difference in oxidation patterns between graphene and graphite and the formation of defects after oxidation. Step-by-step modeling demonstrates that oxidation of 80% of the graphite surface is favorable. Oxidation above half of the graphite surface significantly decreases the energy costs of vacancy formation with CO2 production. The presence of water is crucial in the transformation of epoxy groups to hydroxyl, the intercalation with further bundle and exfoliation. In water-rich conditions, water intercalates graphite at the initial stages of oxidation and oxidation, which is similar to the oxidation process of free-standing graphene; in contrast, in water-free conditions, large molecules intercalate graphite only after oxidation occurs on more than half of the surface.

Boukhvalov, D W

2014-01-01T23:59:59.000Z

183

Realizing Three-Qubit Quantum-Gate Operation in a Cavity-QED System  

Science Journals Connector (OSTI)

Three-qubit quantum phase-gate and C2-NOT gate realization in a cavity-QED system is proposed where highly detuned field modes interact with a four-level system in an...

Joshi, Amitabh; Xiao, Min

184

Formation of nano-crystalline todorokite from biogenic Mn Xiong Han Feng a,1  

E-Print Network [OSTI]

Formation of nano-crystalline todorokite from biogenic Mn oxides Xiong Han Feng a,1 , Mengqiang Zhu oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano

Sparks, Donald L.

185

Deep gates of a new design for closure of diversion tunnels  

Science Journals Connector (OSTI)

1. The discussed gate has a number of merits: the absence of deformation of the stream (except for deformation w...

P. R. Khlopenkov

1968-02-01T23:59:59.000Z

186

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

187

Investigation of the Local Structure of Graphene Oxide  

SciTech Connect (OSTI)

A study of the local structure of graphene oxide is presented. Graphene oxide is understood to be partially oxidized graphene. Absorption peaks corresponding to interlayer states suggest the presence of pristine graphitic nanoislands in graphene oxide. Site-projected partial density of states of carbon atoms bonded to oxygen atoms suggests that the broadening of the peak due to interlayer states in the carbon K-edge spectrum of graphene oxide is predominantly due to formation of epoxide linkages. Density functional theory suggests that multilayers of graphene oxide are linked by peroxide-like linkages.

S Saxena; T Tyson; E Negusse

2011-12-31T23:59:59.000Z

188

Power and thermal effects of SRAM vs. Latch-Mux design styles and clock gating choices  

Science Journals Connector (OSTI)

This paper studies the impact on energy efficiency and thermal behavior of design style and clock-gating style in queue and array structures. These structures are major sources of power dissipation, and both design styles and various clock gating schemes ... Keywords: architecture, clock gating, power, temperature

Yingmin Li; Mark Hempstead; Patrick Mauro; David Brooks; Zhigang Hu; Kevin Skadron

2005-08-01T23:59:59.000Z

189

Geometric phase gate on an optical transition for ion trap quantum computation C. F. Roos,2  

E-Print Network [OSTI]

Geometric phase gate on an optical transition for ion trap quantum computation K. Kim,1 C. F. Roos We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric

Blatt, Rainer

190

Steric Gate Variants of UmuC Confer UV Hypersensitivity on Escherichia coli  

Science Journals Connector (OSTI)

...on survival. FIG. 1. The steric gate residue of UmuC is predicted to approach...blue), and residues F10 and steric gate Y11 (red). The backbone of UmuC is shown...Homo sapiens. FIG. 2. The steric gate Y11 and F10 variants in UmuC cause...

Brenna W. Shurtleff; Jaylene N. Ollivierre; Mohammad Tehrani; Graham C. Walker; Penny J. Beuning

2009-05-29T23:59:59.000Z

191

Simple Template-Based Method to Produce Bradbury-Nielsen Gates  

E-Print Network [OSTI]

ARTICLES Simple Template-Based Method to Produce Bradbury-Nielsen Gates Oh Kyu Yoon, Ignacio A University, Stanford, California, USA A Bradbury-Nielsen gate (BNG) consists of two interleaved as a Bradbury-Nielsen gate (BNG), which consists of two interleaved and electrically isolated sets of wires

Zare, Richard N.

192

Nanometer scale linewidth control during etching of polysilicon gates in high-density plasmas  

Science Journals Connector (OSTI)

We address some of the plasma issues encountered for ultimate silicon gate patterning that should be fixed in order to establish the long term viability of plasma processes in integrated circuits manufacturing. For sub-100-nm gate dimensions, one of ... Keywords: CMOS scaling, critical dimension control, gate patterning, plasma etching

O. Joubert; E. Pargon; J. Foucher; X. Detter; G. Cunge; L. Vallier

2003-09-01T23:59:59.000Z

193

Engineering Light-Gated Ion Channels Matthew R. Banghart, Matthew Volgraf, and Dirk Trauner*  

E-Print Network [OSTI]

Engineering Light-Gated Ion Channels Matthew R. Banghart, Matthew Volgraf, and Dirk Trauner covers the molecular principles that guide the engineering of light-gated ion channels for applicationsVised Manuscript ReceiVed NoVember 6, 2006 ABSTRACT: Ion channels are gated by a variety of stimuli, including

Trauner, Dirk

194

Case Studies on Clock Gating and Local Routign for VLSI Clock Mesh  

E-Print Network [OSTI]

. This thesis deals with the introduction of 'reconfigurability' by using control structures like transmission gates between sub-clock meshes, thus enabling clock gating in clock mesh. By using the optimum value of size for PMOS and NMOS of transmission gate...

Ramakrishnan, Sundararajan

2010-10-12T23:59:59.000Z

195

Life cycle inventory for palm based plywood: A gate-to-gate case study  

Science Journals Connector (OSTI)

The oil palm industry heavily relies on the world market. It is essential to ensure that the oil palm industry is ready to meet the demands and expectation of these overseas customers on the environmental performance of the oil palm industry. Malaysia produces 13.9 million tons of oil palm biomass including oil palm trunk (OPT) frond and empty fruits bunches (EFB) annually. OPT felled in some oil palm plantations during replanting is transported to various industries and one such industry is the plywood factories. In order to gauge the environmental performance of the use of OPT as plywood a Life Cycle Assessment (LCA) study was conducted for palm based plywood. LCA is an important tool to assess the environmental performance of a product or process. Life cycle inventory (LCI) is the heart of a LCA study. This LCI study has a gate-to-gate system boundary and the functional unit is 1 m3 palm plywood produced and covers three types of plywood; Moisture Resistance Plywood (MR) Weather Boiling Proof Plywood Grade 1 (WBP Grade 1) at Factory D and Weather Boiling Proof Plywood Grade 2 (WBP Grade 2) at Factory E. Both factories use two different types of drying processes; conventional drying at Factory D and kiln drying at Factory E. This inventory data was collected from two factories (D and E) representing 40% of Malaysia palm plywood industry. The inputs are mainly the raw materials which are the oil palm trunks and tropical wood veneers and the energy from diesel and electricity from grid which is mainly used for the drying process. The other inputs include water urea formaldehyde phenol formaldehyde flour and melamine powder. The outputs are the biomass waste which consists of oil palm trunk off-cut and emission from boiler. Generally all types of plywood production use almost same materials and processing methods in different quantities. Due to the different process efficiency Factory D uses less input of raw materials and energy compared to Factory E.

Shamim Ahmad; Ismail Sahid; Vijaya Subramaniam; Halimah Muhamad; Anis Mokhtar

2013-01-01T23:59:59.000Z

196

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid  

E-Print Network [OSTI]

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

Najm, Farid N.

197

Compressed sensing quantum process tomography for superconducting quantum gates  

E-Print Network [OSTI]

We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

2014-07-03T23:59:59.000Z

198

Quantification of Priority-OR gates in temporal fault trees  

Science Journals Connector (OSTI)

Fault Tree Analysis has been used in reliability engineering for many decades and has seen various modifications to enable it to analyse fault trees with dynamic and temporal gates so it can incorporate sequential failure in its analysis. Pandora is ... Keywords: Markov chains, Monte Carlo, Pandora, dynamic fault trees, fault trees, safety

Ernest Edifor; Martin Walker; Neil Gordon

2012-09-01T23:59:59.000Z

199

Quantum phase gate for optical qubits with cavity quantum optomechanics  

E-Print Network [OSTI]

We show that a cavity optomechanical system formed by a mechanical resonator simultaneously coupled to two modes of an optical cavity can be used for the implementation of quantum phase gate between optical qubits associated with the two intracavity modes. The scheme is realizable for sufficiently strong single-photon optomechanical coupling in the resolved sideband regime, and is robust against cavity losses.

Muhammad Asjad; Paolo Tombesi; David Vitali

2015-01-16T23:59:59.000Z

200

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor  

E-Print Network [OSTI]

The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

Gupta, Kaustubh

2013-07-09T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

202

Controlling attosecond electron dynamics by phase-stabilized polarization gating  

E-Print Network [OSTI]

LETTERS Controlling attosecond electron dynamics by phase-stabilized polarization gating I. J. SOLA the signature of a single return of the electron wavepacket over a large range of energies. This temporally (low energy) and cut-off (high energy) harmonics, specific focusing conditions ensure that only

Loss, Daniel

203

Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches  

SciTech Connect (OSTI)

The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

Prs, Martti; Khler, Jrgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Grf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

2013-11-25T23:59:59.000Z

204

Anti-coherence based molecular electronics: XOR-gate response  

E-Print Network [OSTI]

Anti-coherence based molecular electronics: XOR-gate response Roi Baera,*, Daniel Neuhauserb 90095-1569, USA Received 18 August 2001 Abstract We point out and simulate the possible utility of anti-coherence phase condition on the loop structure, the transfer would be anti- coherent. By applying one or two

Baer, Roi

205

Oxidation of Propane by Doped Nickel Oxides  

Science Journals Connector (OSTI)

... present study, however, indicate that in the absence of excess oxygen, direct oxidation of propane by the oxide lattice can occur.

D. W. McKEE

1964-04-11T23:59:59.000Z

206

Mechanism of Selective Oxidation of Propene to Acrolein on Bismuth Molybdates from Quantum Mechanical Calculations  

E-Print Network [OSTI]

Mechanism of Selective Oxidation of Propene to Acrolein on Bismuth Molybdates from Quantum for understanding the fundamental chemical mechanisms underlying the selective oxidation of propene to acrolein to form acrolein, and acrolein desorption. The formation of -allyl intermediate is reversible

Goddard III, William A.

207

Geological sequestration of carbon dioxide by hydrous carbonate formation in steelmaking slag .  

E-Print Network [OSTI]

??"The formation of carbonate solids from the alkaline earth oxide phases in steelmaking slag was investigated in dry and aqueous conditions as a vehicle for (more)

Rawlins, C. Hank, 1968-

2008-01-01T23:59:59.000Z

208

Encapsulated gate-all-around InAs nanowire field-effect transistors  

SciTech Connect (OSTI)

We report the fabrication of lateral gate-all-around InAs nanowire field-effect transistors whose gate overlaps the source and drain electrodes and thus fully encapsulates the nanowire channel. They feature large drive current and transconductance that surpass those of conventional non-gate-overlap devices. The improved device characteristics can be attributed to the elimination of access resistance associated with ungated segments between the gate and source/drain electrodes. Our data also reveal a correlation between the normalized transconductance and the threshold voltage, which points to a beneficial effect of our wet-etching procedure performed prior to the atomic-layer-deposition of the gate dielectric.

Sasaki, Satoshi, E-mail: sasaki.s@lab.ntt.co.jp; Tateno, Kouta; Zhang, Guoqiang; Suominen, Henri; Harada, Yuichi; Saito, Shiro; Fujiwara, Akira; Sogawa, Tetsuomi; Muraki, Koji [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)] [NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)

2013-11-18T23:59:59.000Z

209

Formation of Nickel Silicide from Direct-liquid-injection Chemical-vapor-deposited Nickel Nitride Films  

SciTech Connect (OSTI)

Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.

Li, Z.; Gordon, R; Li, H; Shenai, D; Lavoie, C

2010-01-01T23:59:59.000Z

210

Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF  

E-Print Network [OSTI]

and operations are listed and illustrated through their application to the Thames Flood Barrier gates

Bowles, David S.

211

High-resolution depth proling of ultrathin gate oxides using medium-energy ion scattering  

E-Print Network [OSTI]

areas, such as vacuum techniques, accelerator technology, and ion±solid interactions, to operate and can Nuclear Instruments and Methods in Physics Research B 183 (2001) 146±153 www

Gustafsson, Torgny

212

Oxidation of stepped Pt(111) studied by x-ray photoelectron spectroscopy and density functional theory  

SciTech Connect (OSTI)

In this comparative density functional theory and x-ray photoelectron spectroscopy study on the interaction of oxygen with stepped Pt(111) surfaces, we show that both the initial adsorption and oxidation occur at the steps rather than terraces. An equivalent behavior was observed for the oxide formation at higher chemical potentials, where, after the formation of a one-dimensional PtO{sub 2}-type oxide at the steps, similar oxide chains form on the (111) terraces, indicating the initial stages of bulk oxide formation.

Bandlow, Jochen; Kaghazchi, Payam; Jacob, Timo [Institut fuer Elektrochemie, Universitaet Ulm, Albert-Einstein-Allee 47, D-89069 Ulm (Germany); Papp, C.; Traenkenschuh, B.; Streber, R.; Lorenz, M. P. A.; Fuhrmann, T.; Steinrueck, H.-P. [Lehrstuhl fuer Physikalische Chemie II, Universitaet Erlangen-Nuernberg, Egerlandstr. 3, D-91058 Erlangen (Germany); Denecke, R. [Wilhelm-Ostwald-Institut fuer Physikalische und Theoretische Chemie, Universitaet Leipzig, Linnestr. 2, D-04103 Leipzig (Germany)

2011-05-01T23:59:59.000Z

213

THE GROWTH MECHANISMS OF ULTRATHIN GATE DIELECTRICS ON SILICON  

E-Print Network [OSTI]

in the passive oxidation regime, while etching in the active oxidation regime made the surface slightly rougher. A roughening regime is also observed in between the active and passive oxidation regimes and causes, I was fortunate to share a house with Alex See, from whom Qing-Tang heard about me and recruited me

Gustafsson, Torgny

214

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons  

DOE Patents [OSTI]

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons is carried out over metal vanadate catalysts under oxidizing conditions. The vanadate catalysts are represented by the formulas M[sub 3](VO[sub 4])[sub 2] and MV[sub 2]O[sub 6], M representing Mg, Zn, Ca, Pb, or Cd. The reaction is carried out in the presence of oxygen, but the formation of oxygenate by-products is suppressed.

Kung, H.H.; Chaar, M.A.

1988-10-11T23:59:59.000Z

215

Fast and reliable automated ventriculography for gated blood-pool studies  

SciTech Connect (OSTI)

A set of algorithms, requiring only one single operator-interaction and minimal running time, has been generated to analyze left-ventricular function from cardiac gated Tc-99m Blood-pool Nuclear Medicine scintigrams (CBPS). The process depends mainly on an optimal edge enhancement filter derived in the frequency domain and applied to the study via FFT. The bandpass filter is based on Prolate Spheroidal wave functions and was described by Shanmugam et al in 1979. It maximizes output in the vicinity of edges, and is adapted here to enhance the ventricular region of interest (ROI) yielding images with sharp edges and good signal-to-noise ratio (SNR). This procedure does not require previous background subtraction from initial images in order to adequately define left-ventricular contours. A filter format has been chosen which will allow successful performance of the technique over a wide range of CBPS. The filtered image is then scanned and, on the original frame edges around ROI are marked and counts within ROI are defined. It will automatically run for any allowed number or size of frames. Processing time averages less than one minute when employing an Array Processor for a set of 32 64x64 pixel frames. Nuclear Medicine image processing applications of such filter have not been reported to date. This process has been tested on variable rate, variable ejection fraction, known volume Vanderbilt cardiac phantom; with maximum deviation of 3.5% and estimated standard deviation (SD) of 1.7%. When compared to other processes currently available, this technique is clearly more reliable due to its accuracy, speed and simplicity. It has also been used to determine ventricular volumes from gated SPECT images, with a respectable SD of 2.8%.

Lima, M.G.

1984-01-01T23:59:59.000Z

216

Ethylene oxide and Acetaldehyde in hot cores  

E-Print Network [OSTI]

[Abridged] Ethylene oxide and its isomer acetaldehyde are important complex organic molecules because of their potential role in the formation of amino acids. Despite the fact that acetaldehyde is ubiquitous in the interstellar medium, ethylene oxide has not yet been detected in cold sources. We aim to understand the chemistry of the formation and loss of ethylene oxide in hot and cold interstellar objects (i) by including in a revised gas-grain network some recent experimental results on grain surfaces and (ii) by comparison with the chemical behaviour of its isomer, acetaldehyde. We test the code for the case of a hot core. The model allows us to predict the gaseous and solid ethylene oxide abundances during a cooling-down phase prior to star formation and during the subsequent warm-up phase. We can therefore predict at what temperatures ethylene oxide forms on grain surfaces and at what temperature it starts to desorb into the gas phase. The model reproduces the observed gaseous abundances of ethylene oxid...

Occhiogrosso, A; Herbst, E; Viti, S; Ward, M D; Price, S D; Brown, W A

2014-01-01T23:59:59.000Z

217

South Gate, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, California: Energy Resources Gate, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.954737°, -118.2120161° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.954737,"lon":-118.2120161,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

218

Ocean Gate, New Jersey: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, New Jersey: Energy Resources Gate, New Jersey: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.926785°, -74.1337496° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.926785,"lon":-74.1337496,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

219

Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost  

E-Print Network [OSTI]

Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

Robert Wille; Mehdi Saeedi; Rolf Drechsler

2010-04-26T23:59:59.000Z

220

Bioavailable copper modulates oxidative phosphorylation and growth of tumors  

Science Journals Connector (OSTI)

...formation of new blood vessels, and copper has been...acid (TCA) cycle and fuels oxidative phosphorylation...ATP (A), glucose consumption (B...which is consumed to fuel rapid proliferation...more invasive. Oxygen consumption is not quantitatively...

Seiko Ishida; Pnlope Andreux; Carole Poitry-Yamate; Johan Auwerx; Douglas Hanahan

2013-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

222

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

223

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network [OSTI]

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

Jin, Xin

2012-07-16T23:59:59.000Z

224

Simple trapped-ion architecture for high-fidelity Toffoli gates  

SciTech Connect (OSTI)

We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

Borrelli, Massimo [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Mazzola, Laura [Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland); School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Paternostro, Mauro [School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Maniscalco, Sabrina [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland)

2011-07-15T23:59:59.000Z

225

Geometric phase gate on an optical transition for ion trap quantum computation  

Science Journals Connector (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10?4.

K. Kim; C. F. Roos; L. Aolita; H. Hffner; V. Nebendahl; R. Blatt

2008-05-08T23:59:59.000Z

226

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network [OSTI]

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

K. Kim; C. F. Roos; L. Aolita; H. Haeffner; V. Nebendahl; R. Blatt

2007-10-21T23:59:59.000Z

227

Increase of the reliability and cost effectiveness of the Leningrad flood control gates  

SciTech Connect (OSTI)

This paper presents the results of a detailed analysis of competing designs of rolling gates and floating radial gates for the Leningrad flood control system and describes from a hydraulic engineering standpoint those aspects of the gate designs which led to the conclusion that they did not have sufficient reliability for the loads encountered under flood conditions. Specific design revisions which take into account not only the flood loads but also the navigation and dock parts of the structures were investigated and recommended.

Khlopenkov, P.R.

1988-06-01T23:59:59.000Z

228

Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh Kyu Yoon, and Richard N. Zare*  

E-Print Network [OSTI]

Micromachined Bradbury-Nielsen Gates Ignacio A. Zuleta, Griffin K. Barbula, Matthew D. Robbins, Oh 94305-5080 Bradbury-Nielsen gates (BNGs) are a standard way for gating or steering beams of charged for axial gating of an ion beam is referred to as a Bradbury-Nielsen gate (BNG).6 Depending on the kinetic

Zare, Richard N.

229

Ni-Pt Silicide Formation Through Ti Mediating Layers  

SciTech Connect (OSTI)

With Ni1-xPtxSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on the Si substrate prior to Ni-Pt deposition that can affect the formation of Ni1-xPtxSi and its texture. In this manuscript, it will be shown that an extended queue time prior to Ni-Pt deposition leads to morphological changes in the Ni1-xPtxSi formation sequence. A layer of Ti deposited between Ni-Pt and Si reduces the native oxide and may facilitate Ni1-xPtxSi formation. With increasing Ti thickness, the presence of metal-rich phases is gradually reduced and the formation temperature of Ni1-xPtxSi increases, suggesting a direct formation of Ni1-xPtxSi from Ni-Pt. In the presence of an interfacial oxide, an increase in formation temperature is also observed with increasing Ti interlayer thickness. When the Ti layer is sufficiently thick, the phase formation sequence becomes relatively insensitive to the presence of an interfacial oxide or extended queue time.

Besser,P.; Lavoie, C.; Ozcan, A.; Murray, C.; Strane, J.; Wong, K.; Gribelyuk, M.; Wang, Y.; Parks, C.; Jordan-Sweet, J.

2007-01-01T23:59:59.000Z

230

Formulation and method for preparing gels comprising hydrous cerium oxide  

DOE Patents [OSTI]

Formulations useful for preparing hydrous cerium oxide gels contain a metal salt including cerium, an organic base, and a complexing agent. Methods for preparing gels containing hydrous cerium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including cerium, an organic base, and a complexing agent.

Collins, Jack L; Chi, Anthony

2013-05-07T23:59:59.000Z

231

Formulation and method for preparing gels comprising hydrous hafnium oxide  

DOE Patents [OSTI]

Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

2013-08-06T23:59:59.000Z

232

Formulation and method for preparing gels comprising hydrous aluminum oxide  

SciTech Connect (OSTI)

Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

Collins, Jack L.

2014-06-17T23:59:59.000Z

233

The catalytic oxidation of propylene: investigation of catalyst activity.  

E-Print Network [OSTI]

- thur oxidation resulted in the formation oi' dioxymsthylperoxides acetalde- hydes formic aoids carbon monoxide, carbon dioxide~ hydrogen and water, &t temperatures above 500 degrees Centigrade the polymer1sation of eth- ylene became significant... that water vapor exerted a catalytio effeot on the oxidation of ethylene, while carbon dioxide showed no aooelerating effeot. Davis (ll) observed that water vapor possessed a oatalytio ei'- feet on ths oxidation of olefins. Thompson and Hinshslwood (SS...

Woodham, John Frank

1953-01-01T23:59:59.000Z

234

Synthesis of zirconium oxide nanoparticle by sol-gel technique  

SciTech Connect (OSTI)

Zirconium oxide nanoparticle is synthesized using sol-gel technique. Various mole ratio of ammonia solution and nitric acid relative to zirconium propoxide is added in the reaction to study the effect on the crystallinity and particle size on zirconium oxide particle. Zirconium oxide synthesized with nitric acid have the smallest particle size under FESEM image and show the increasing formation of crystalline tetragonal phase under XRD diffractogram.

Lim, H. S.; Ahmad, A.; Hamzah, H. [School of Chemical Science and Food Technology, Faculty of Science and Technology, National University of Malaysia, 43600 Bangi (Malaysia)

2013-11-27T23:59:59.000Z

235

Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape  

Broader source: Energy.gov [DOE]

Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

236

Reversible Switching of an Optical Gate Using Phase-Change Material and Si Waveguide  

Science Journals Connector (OSTI)

Optical gate switch that uses Ge2Sb2Te5phase-change material was fabricated and the reversible switching has been...

Ikuma, Yuichiro; Shoji, Yuya; Kuwahara, Masashi; Wang, Xiaomin; Kintaka, Kenji; Kawashima, Hitoshi; Tanaka, Daiki; Tsuda, Hiroyuki

237

Development of a time-gated system for Raman spectroscopy of biological samples  

Science Journals Connector (OSTI)

A time gating system has been constructed that is capable of recording high quality Raman spectra of highly fluorescing biological samples while operating below the photodamage...

Knorr, Florian; Smith, Zachary J; Wachsmann-Hogiu, Sebastian

2010-01-01T23:59:59.000Z

238

Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates  

E-Print Network [OSTI]

The information obtained from the operation of a quantum gate on only two complementary sets of input states is sufficient to estimate the quantum process fidelity of the gate. In the case of entangling gates, these conditions can be used to predict the multi qubit entanglement capability from the fidelities of two non-entangling local operations. It is then possible to predict highly non-classical features of the gate such as violations of local realism from the fidelities of two completely classical input-output relations, without generating any actual entanglement.

Holger F. Hofmann; Ryo Okamoto; Shigeki Takeuchi

2005-09-01T23:59:59.000Z

239

Synthesis of Reversible Functions Using Various Gate Libraries and Design Specifications.  

E-Print Network [OSTI]

?? This dissertation is devoted to efficient automated logic synthesis of reversible circuits using various gate types and initial specifications. These Reversible circuits are of (more)

Alhagi, Nouraddin

2010-01-01T23:59:59.000Z

240

Coherence-Controlled Holographic Microscopy for Coherence-Gated Quantitative Phase Imaging  

Science Journals Connector (OSTI)

We show that the use of incoherent illumination in coherence-controlled holographic microscopy (CCHM) enables coherence-gated quantitative phase imaging of objects through turbid...

Slaby, Tomas; Kolman, Pavel; Dostal, Zbynek; Antos, Martin; Lostak, Martin; Krizova, Aneta; Collakova, Jana; Kollarova, Vera; Slaba, Michala; Vesely, Pavel; Chmelik, Radim

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Rapid optimization of working parameters of microwave-driven multilevel qubits for minimal gate leakage  

E-Print Network [OSTI]

.0134 is the interaction between the qubits, .0020 .0136 M=L is the coupling constant, and x i , x ei , and h.0133x i .0134 (i .0136 1 and 2) are the canonical coordinate, normal- ized external flux, and Hamiltonian of the ith single qubit. Note... for the gate at the point B. The quality of a gate can be described by gate fidelity F .0017 Trace.0137.0026 P .0026 I .0138, where .0026 P and.0026 I are the physical and ideal density matrices after gate operation and the overline denotes averaging over all...

Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

2005-09-16T23:59:59.000Z

242

E-Print Network 3.0 - affects voltage-gated calcium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

modulate neuronal voltage-gated calcium cur- rents, we performed a whole-cell patch... that hippocampal neurons in an astrocyte-enriched environment show augmentation of...

243

Use of high-level design information for enabling automation of fine-grained power gating  

E-Print Network [OSTI]

Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

Agarwal, Abhinav

2014-01-01T23:59:59.000Z

244

L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer  

SciTech Connect (OSTI)

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for IIIV MOSFETs at the 7?nm technology node and/or beyond.

Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-21T23:59:59.000Z

245

Three-qubit phase gate based on cavity quantum electrodynamics  

E-Print Network [OSTI]

- mentation, such as linear ion traps #4;1#5;, liquid-state nuclear magnetic resonance #1;NMR#2; #4;2#5;, and cavity QED systems #4;3,4#5;. There are three requirements for implementing a quantum computer: Efficient manipulation and read out of an indi.... #4;6#5;, a scheme to implement a two-qubit quantum phase gate and one-qubit unitary operation implementation based on cavity QED was described. They choose the Fock states #6;0#7; and #6;1#7; of a high Q cavity mode as the two logical states of a...

Chang, Jun-Tao; Zubairy, M. Suhail

2008-01-01T23:59:59.000Z

246

Copper-mediated LDL oxidation by homocysteine and related compounds depends largely on copper ligation  

E-Print Network [OSTI]

Copper-mediated LDL oxidation by homocysteine and related compounds depends largely on copper of copper-mediated LDL oxidation (initiation, conjugated diene formation and aldehyde formation), whereas at high concentration, it acts as an antioxidant. The affinity for copper of homocysteine and related

Williamson, Mike P.

247

Cu- and Ag-modified cerium oxide catalysts for methane oxidation  

SciTech Connect (OSTI)

The catalytic activity of nanocrystalline doped ceria and Cu- and Ag-modified ceria for the complete oxidation of methane was studied in this work. The catalyst structure was studied by X-ray diffraction (XRD) and related to the availability of low-temperature oxygen species. Selected samples were also analyzed by STEM/EDX, HRTEM, and XPS. Temperature-programmed reduction (TPR) by H{sub 2} and CH{sub 4}, as well as oxygen chemisorption, measurements were used to characterize the different oxygen species present on the catalyst. La and Zr were used as dopants to modify the crystal size and reduction properties of ceria. Enhanced activity for the complete oxidation of methane is discussed in terms of ceria reducibility, crystal size, and formation of oxygen defects at the surface (extrinsic oxygen vacancies). Addition of transition metal oxides (CuO) or transition metals (Ag) improves the low-temperature oxidation activity of cerium oxide. The interaction of ceria with Ag and CuO is a strong function of the crystal size of ceria. In the presence of the transition metal or metal oxide, a small crystal size of ceria favors the formation of highly reducible oxygen species and enhances the methane oxidation activity.

Kundakovic, L.; Flytzani-Stephanopoulis, M. [Tufts Univ., Medford, MA (United States). Dept. of Chemical Engineering] [Tufts Univ., Medford, MA (United States). Dept. of Chemical Engineering

1998-10-01T23:59:59.000Z

248

Identification of the Sequence of Steps Intrinsic to Spheromak Formation  

Science Journals Connector (OSTI)

A planar coaxial electrostatic helicity source is used for studying the relaxation process intrinsic to spheromak formation Experimental observations reveal that spheromak formation involves: (1) breakdown and creation of a number of distinct arched filamentary plasma?filled flux loops that span from cathode to anode gas nozzles (2) merging of these loops to form a central column (3) jet?like expansion of the central column (4) kink instability of the central column (5) conversion of toroidal flux to poloidal flux by the kink instability. Steps 1 and 3 indicate that spheromak formation involves an MHD pumping of plasma from the gas nozzles into the magnetic flux tube linking the nozzles. In order to measure this pumping the gas puffing system has been modified to permit simultaneous injection of different gas species into the two ends of the flux tube linking the wall. Gated CCD cameras with narrow?band optical filters are used to track the pumped flows.

P. M. Bellan; S. You; G. S. Yun

2006-01-01T23:59:59.000Z

249

Directions to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North  

E-Print Network [OSTI]

on Vermont Avenue Turn right at 36th Place/Downey Way and enter USC at Gate 6 5 (Golden State/Santa AnaDirections to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North Take the Exposition Boulevard exit Go straight through the 37th Street light. Keep left Go under the freeway bridge and across

Valero-Cuevas, Francisco

250

Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant  

E-Print Network [OSTI]

, the Fermi energy of a nanotube can be changed, as ions from the solution accu- mulate on the surface gating of nanotubes has been shown previously to effectively shift the Fermi energy of semiconducting with the laser energy, we can observe the Raman spectrum from a single SWNT.7 Electrochemical gating of nanotubes

251

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network [OSTI]

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

252

Impact of tide gates on the migration of juvenile sea trout, Salmo trutta  

Science Journals Connector (OSTI)

Abstract As part of flood protection and land reclamation schemes, tide gates allow rivers to discharge to sea when open, and prevent salt water intrusion when closed. Their impact on diadromous fish migration between essential spawning and rearing habitats, and the effectiveness of mitigation measures, have received little consideration. The River Meon, UK, discharges to sea through four top-hung counterbalanced tide gates. In March 2012, the gates were replaced with new ones of the same design, but with an orifice installed in two of them partly to improve fish passage. Sixty downstream migrating juvenile sea trout, Salmo trutta, were trapped approximately 4.9km upstream of the tidal limit and tagged with acoustic transmitters in April 2011 (n=30) and 2012 (n=30). Tagged individuals were detected by acoustic receivers placed near the tide gates before (year 1) and after (year 2) orifice installation. Of the fish that approached the tide gates, 95.8% and 100.0% successfully passed in years 1 and 2, respectively. The speed of migration at the gates was slower than for upstream and downstream reaches, and was positively related to percentage of time the gates were open. Presence of the orifices did not influence delay. Overall, top-hung tide gates delayed sea trout migration, potentially increasing the risk of predation and energy expenditure during the vulnerable juvenile life stage.

G.V. Wright; R.M. Wright; P.S. Kemp

2014-01-01T23:59:59.000Z

253

Coherent molecular transistor: Control through variation of the gate wave function  

SciTech Connect (OSTI)

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)] [Dpartement de Chimie, Universit de Montral, C.P. 6128 Succursale A, Montral, Quebec H3C 3J7 (Canada)

2014-03-21T23:59:59.000Z

254

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network [OSTI]

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

255

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

256

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime  

E-Print Network [OSTI]

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent of a disordered nanowire in the presence of an external gate electrode which can be used for depleting the carrier and Gardner for describing the energy dependence of the localization length around the band edges allowing us

Recanati, Catherine

257

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1  

E-Print Network [OSTI]

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

Shepard, Kenneth

258

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*  

E-Print Network [OSTI]

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

Beebe, David J.

259

Asynchronous Gate-Diffusion----Input (GDI) Circuits Arkadiy Morgenshtein, Michael Moreinis and Ran Ginosar  

E-Print Network [OSTI]

1 Asynchronous Gate-Diffusion----Input (GDI) Circuits Arkadiy Morgenshtein, Michael Moreinis, Israel [ran@ee.technion.ac.il] Abstract: Novel Gate-Diffusion Input (GDI) circuits are applied to asynchronous design. A variety of GDI implementations are compared with typical CMOS asynchronous circuits

Ginosar, Ran

260

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip  

E-Print Network [OSTI]

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate transformer integrated in a CMOS silicon die together with the gate driver and other required functions frequency through the coreless transformer. The chosen design methodology will be explained and experimental

Paris-Sud XI, Université de

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

MedGate Occupational MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) More Documents & Publications PIA - Savannah River Nuclear Solution (SRNS) Procurement Cycle System (PCS) PIA - Savannah River Nuclear Solutions (SRNS) Human Resource Management

262

Optimal control for fast and high-fidelity quantum gates in coupled superconducting flux qubits  

E-Print Network [OSTI]

We apply the quantum optimal control theory based on the Krotov method to implement single-qubit $X$ and $Z$ gates and two-qubit CNOT gates for inductively coupled superconducting flux qubits with fixed qubit transition frequencies and fixed off-diagonal qubit-qubit coupling. Our scheme that shares the same advantage of other directly coupling schemes requires no additional coupler subcircuit and control lines. The control lines needed are only for the manipulation of individual qubits (e.g., a time-dependent magnetic flux or field applied on each qubit). The qubits are operated at the optimal coherence points and the gate operation times (single-qubit gates $magnetic-field-induced single-qubit interactions and two-qubit couplings. The effect of leakage to higher energy-level states and the effect of qubit decoherence on the quantum gate operations are also discussed.

Shang-Yu Huang; Hsi-Sheng Goan

2014-06-30T23:59:59.000Z

263

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

264

Oxidation of propylene over copper oxide catalysts  

E-Print Network [OSTI]

to the study of propylene oxidation. Dunlop (17) reported that small quantities of iron compounds substantially enhanced the catalytic activity of chromia-alumina catalysts with respect to propylene oxidation, Woodharn (72) has suggested that under... between 360 C and 430oC the rate of propane oxidation decreases as the teznperature is increased, and the rate of conversion to olefins, especially propylene, becomes progressively greater. Above 430 C the proportion of propane converted to ethylene in...

Billingsley, David Stuart

2012-06-07T23:59:59.000Z

265

Examination of geometric and dosimetric accuracies of gated step-and-shoot intensity modulated radiation therapy  

SciTech Connect (OSTI)

Due to the complicated technical nature of gated radiation therapy, electronic and mechanical limitations may affect the precision of delivery. The purpose of this study is to investigate the geometric and dosimetric accuracies of gated step-and-shoot intensity modulated radiation treatments (SS-IMRT). Unique segmental MLC plans are designed, which allow quantitative testing of the gating process. Both ungated and gated deliveries are investigated for different dose sizes, dose rates, and gating window times using a commercial treatment system (Varian Trilogy) together with a respiratory gating system [Varian Real-Time Position Management system]. Radiographic film measurements are used to study the geometric accuracy, where it is found that with both ungated and gated SS-IMRT deliveries the MLC leaf divergence away from planned is less than or equal to the MLC specified leaf tolerance value for all leafs (leaf tolerance being settable from 0.5-5 mm). Nevertheless, due to the MLC controller design, failure to define a specific leaf tolerance value suitable to the SS-IMRT plan can lead to undesired geometric effects, such as leaf motion of up to the maximum 5 mm leaf tolerance value occurring after the beam is turned on. In this case, gating may be advantageous over the ungated case, as it allows more time for the MLC to reach the intended leaf configuration. The dosimetric precision of gated SS-IMRT is investigated using ionization chamber methods. Compared with the ungated case, it is found that gating generally leads to increased dosimetric errors due to the interruption of the 'overshoot phenomena.' With gating the average timing deviation for intermediate segments is found to be 27 ms, compared to 18 ms for the ungated case. For a plan delivered at 600 MU/min this would correspond to an average segment dose error of {approx}0.27 MU and {approx}0.18 MU for gated and ungated deliveries, respectively. The maximum dosimetric errors for individual intermediate segments are found to deviate by up to {approx}0.64 MU from their planned value when delivered at 600 MU/min using gating, this compares to only {approx}0.32 MU for the ungated case.

Wiersma, R. D.; Xing, L. [Department of Radiation Oncology, Stanford University School of Medicine, Stanford, California 94305-5847 (United States)

2007-10-15T23:59:59.000Z

266

Transition metal oxides deposited on rhodium and platinum: Surface chemistry and catalysis  

SciTech Connect (OSTI)

The surface chemistry and catalytic reactivity of transition metal oxides deposited on Rh and Pt substrates has been examined in order to establish the role of oxide-metal interactions in influencing catalytic activity. The oxides investigated included titanium oxide (TiOx), vanadium oxide (VOx), iron oxide (FeOx), zirconium oxide (ZrOx), niobium oxide (NbOx), tantalum oxide (TaOx), and tungsten oxide (WOx). The techniques used to characterize the sample included AES, XPS, LEED, TPD, ISS, and STM. After characterization of the surface in UHV, the sample was enclosed in an atmospheric reaction cell to measure the influence of the oxide deposits on the catalytic activity of the pure metal for CO and CO{sub 2} hydrogenation. The oxide deposits were found to strongly enhance the reactivity of the Rh foil. The rates of methane formation were promoted by up to 15 fold with the maximum in rate enhancement occurring at oxide coverages of approximately 0.5 ML. TiOx TaOx, and NbOx were the most effective promoters and were stable in the highest oxidation states during both reactions (compared to VOx, WOx, and FeOx). The trend in promoter effectiveness was attributed to the direct relationship between oxidation state and Lewis acidity. Bonding at the metal oxide/metal interface between the oxygen end of adsorbed CO and the Lewis acidic oxide was postulated to facilitate C-O bond dissociation and subsequent hydrogenation. 192 refs.

Boffa, A.B. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry; [Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1994-07-01T23:59:59.000Z

267

Solid Oxide Fuel Cells  

Science Journals Connector (OSTI)

A Solid Oxide Fuel Cell (SOFC) is typically composed of two porous electrodes, interposed between an electrolyte made of a particular solid oxide ceramic material. The system originates from the work of Nernst...

Nigel M. Sammes; Roberto Bove; Jakub Pusz

2006-01-01T23:59:59.000Z

268

NETL Report format template  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NGCC Natural gas combined cycle NOx Oxides of nitrogen PC Sub Pulverized coal subcritical PC Sup Pulverized coal supercritical PM Particulate matter SO 2 Sulfur dioxide...

269

The electrochemical oxidation of organic selenides and selenoxides  

SciTech Connect (OSTI)

The electrochemical oxidation of alkyl and aryl selenides was investigated in acetonitrile. The oxidation of diphenyl selenide and di(4-methylphenyl) selenide led primarily to the formation of their respective selenoxides, which were identified by exhaustive coulometric oxidation and {sup 1}H and {sup 13}C analysis of the products. The selenoxide itself was not observed in the cyclic voltammetry of the selenide for two reasons: first, the protonation of the selenoxide by the acid formed from the reaction of water with the cation radical and second, the formation of a selenoxide hydrate. The formation of the hydrate with diphenyl selenoxide was verified by isolation of the dimethoxy derivative. In addition to the selenoxide, selenonium compounds, formed by the coupling of the oxidized material, were also observed. The alkyl selenides were generally oxidized at a lower potential than the aryl selenides. This trend is different from the sulfur analogues, where the aryl sulfides are easier to oxidize than their alkyl counterparts. As a result, the difference in their redox potentials is relatively small. These differences may occur because the oxidation of aryl sulfides is more likely to take place on the aromatic ring, which leads to a greater yield of the coupled products (about 100%) when compared to the selenide analogue.

Ryan, M.D.; Yau, J.; Hack, M. [Marquette Univ., Milwaukee, WI (United States). Dept. of Chemistry

1997-06-01T23:59:59.000Z

270

Stripline microchannel plate image intensifier tubes (MCPTS) for nanosecond optical gating applications  

SciTech Connect (OSTI)

Shuttering characteristics of low impedance stripline geometry microchannel plate image intensifier tubes (MCPTs) with 50% transmissive nickel undercoated S-20 photocathodes are discussed. Iris-free shutter sequences with 50 to 75 micron resolution at optical gate times of 500ps to 2ns were measured for typical samples from two manufacturers. Shutter sequences clearly showing gate pulse propagation velocities for this MCPT design when externally driven by impedance matched circuitry are contrasted with non-directional sequences obtained from unmatched coupling of the gate pulse. 7 refs., 7 figs.

Yates, G.J.; Jaramillo, S.A.; Zagarino, P.; Thomas, M.

1986-01-01T23:59:59.000Z

271

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene  

E-Print Network [OSTI]

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

2011-04-22T23:59:59.000Z

272

Integrating respiratory gating into a megavoltage cone-beam CT system  

SciTech Connect (OSTI)

We have previously described a low-dose megavoltage cone beam computed tomography (MV CBCT) system capable of producing projection image using one beam pulse. In this study, we report on its integration with respiratory gating for gated radiotherapy. The respiratory gating system tracks a reflective marker on the patient's abdomen midway between the xiphoid and umbilicus, and disables radiation delivery when the marker position is outside predefined thresholds. We investigate two strategies for acquiring gated scans. In the continuous rotation-gated acquisition, the linear accelerator (LINAC) is set to the fixed x-ray mode and the gantry makes a 5 min, 360 deg.continuous rotation, during which the gating system turns the radiation beam on and off, resulting in projection images with an uneven distribution of projection angles (e.g., in 70 arcs each covering 2 deg.). In the gated rotation-continuous acquisition, the LINAC is set to the dynamic arc mode, which suspends the gantry rotation when the gating system inhibits the beam, leading to a slightly longer (6-7 min) scan time, but yielding projection images with more evenly distributed projection angles (e.g., {approx}0.8 deg.between two consecutive projection angles). We have tested both data acquisition schemes on stationary (a contrast detail and a thoracic) phantoms and protocol lung patients. For stationary phantoms, a separate motion phantom not visible in the images is used to trigger the RPM system. Frame rate is adjusted so that approximately 450 images (13 MU) are acquired for each scan and three-dimensional tomographic images reconstructed using a Feldkamp filtered backprojection algorithm. The gated rotation-continuous acquisition yield reconstructions free of breathing artifacts. The tumor in parenchymal lung and normal tissues are easily discernible and the boundary between the diaphragm and the lung sharply defined. Contrast-to-noise ratio (CNR) is not degraded relative to nongated scans of stationary phantoms. The continuous rotation-gated acquisition scan also yields tomographic images with discernible anatomic features; however, streak artifacts are observed and CNR is reduced by approximately a factor of 4. In conclusion, we have successfully developed a gated MV CBCT system to verify the patient positioning for gated radiotherapy.

Chang Jenghwa; Sillanpaa, Jussi; Ling, Clifton C.; Seppi, Edward; Yorke, Ellen; Mageras, Gikas; Amols, Howard [Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York 10021 (United States); Ginzton Technology Center, Varian Medical Systems, Mountain View, California 94043 (United States); Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, New York 10021 (United States)

2006-07-15T23:59:59.000Z

273

Demonstration of a fully tuneable entangling gate for continuous-variable one-way quantum computation  

E-Print Network [OSTI]

We introduce a fully tuneable entangling gate for continuous-variable one-way quantum computation. We present a proof-of-principle demonstration by propagating two independent optical inputs through a three-mode linear cluster state and applying the gate in various regimes. The genuine quantum nature of the gate is confirmed by verifying the entanglement strength in the output state. Our protocol can be readily incorporated into efficient multi-mode interaction operations in the context of large-scale one-way quantum computation, as our tuning process is the generalisation of cluster state shaping.

Shota Yokoyama; Ryuji Ukai; Seiji C. Armstrong; Jun-ichi Yoshikawa; Peter van Loock; Akira Furusawa

2014-10-02T23:59:59.000Z

274

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures  

Science Journals Connector (OSTI)

Strong plasmon resonances have been observed in the terahertz transmission spectra (15 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor(HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

A. V. Muravjov; D. B. Veksler; V. V. Popov; O. V. Polischuk; N. Pala; X. Hu; R. Gaska; H. Saxena; R. E. Peale; M. S. Shur

2010-01-01T23:59:59.000Z

275

Selective Electrocatalytic Activity of Ligand Stabilized Copper Oxide Nanoparticles  

SciTech Connect (OSTI)

Ligand stabilization can influence the surface chemistry of Cu oxide nanoparticles (NPs) and provide unique product distributions for electrocatalytic methanol (MeOH) oxidation and CO{sub 2} reduction reactions. Oleic acid (OA) stabilized Cu{sub 2}O and CuO NPs promote the MeOH oxidation reaction with 88% and 99.97% selective HCOH formation, respectively. Alternatively, CO{sub 2} is the only reaction product detected for bulk Cu oxides and Cu oxide NPs with no ligands or weakly interacting ligands. We also demonstrate that OA stabilized Cu oxide NPs can reduce CO{sub 2} into CO with a {approx}1.7-fold increase in CO/H{sub 2} production ratios compared to bulk Cu oxides. The OA stabilized Cu oxide NPs also show 7.6 and 9.1-fold increases in CO/H{sub 2} production ratios compared to weakly stabilized and non-stabilized Cu oxide NPs, respectively. Our data illustrates that the presence and type of surface ligand can substantially influence the catalytic product selectivity of Cu oxide NPs.

Kauffman, Douglas R.; Ohodnicki, Paul R.; Kail, Brian W; Matranga, Christopher

2011-01-01T23:59:59.000Z

276

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |  

Broader source: Energy.gov (indexed) [DOE]

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the research, business and government sectors who spoke at the conference of nearly 2,400. These speakers, along with the startup companies and innovators in attendance, converged outside of Washington, D.C., to offer their take on how America can tackle our energy challenges. One of the top-level highlights from the Summit included this fireside chat

277

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M.; Zhou, Hong-Cai (TAM); (U. Amsterdam)

2010-10-22T23:59:59.000Z

278

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M; Zhou, Hong-Cai

2010-01-01T23:59:59.000Z

279

Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

280

Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

282

E-Print Network 3.0 - arbitrary phase gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 3 4 5 > >> Page: << < 1 2 3 4 5 > >> 41 Optical simulation of quantum logic N. J. Cerf,1 Summary: of universal quantum gates using simple optical components beam...

283

Simple template-based method to produce bradbury-nielsen gates  

Science Journals Connector (OSTI)

A Bradbury-Nielsen gate (BNG) consists of two interleaved...m with minimal use of a microscope. The small wire spacing allows modulation rates at tens of megahertz. Using this method, we have fabricated four BNG...

Oh Kyu Yoon; Ignacio A. Zuleta

2007-11-01T23:59:59.000Z

284

Process fidelity estimation of linear optical quantum CZ gate: A comparative study  

E-Print Network [OSTI]

We present a systematic comparison of different methods of fidelity estimation of a linear optical quantum controlled-Z gate implemented by two-photon interference on a partially polarizing beam splitter. We have utilized a linear fidelity estimator based on the Monte Carlo sampling technique as well as a non-linear estimator based on maximum likelihood reconstruction of a full quantum process matrix. In addition, we have also evaluated lower bound on quantum gate fidelity determined by average quantum state fidelities for two mutually unbiased bases. In order to probe various regimes of operation of the gate we have introduced a tunable delay line between the two photons. This allowed us to move from high-fidelity operation to a regime where the photons become distinguishable and the success probability of the scheme significantly depends on input state. We discuss in detail possible systematic effects that could influence the gate fidelity estimation.

M. Micuda; M. Sedlak; I. Straka; M. Mikova; M. Dusek; M. Jezek; J. Fiurasek

2014-03-19T23:59:59.000Z

285

Ligand-Gated Chloride Channels Are Receptors for Biogenic Amines in C. elegans  

E-Print Network [OSTI]

Biogenic amines such as serotonin and dopamine are intercellular signaling molecules that function widely as neurotransmitters and neuromodulators. We have identified in the nematode Caenorhabditis elegans three ligand-gated ...

Ringstad, Niels

286

Synthesis of reversible functions using various gate libraries and design specifications  

Science Journals Connector (OSTI)

This dissertation is devoted to efficient automated logic synthesis of reversible circuits using various gate types and initial specifications. These Reversible circuits are of interest to several modern technologies, including Nanotechnology, ...

Nouraddin Alhagi / Marek Perkowski

2010-01-01T23:59:59.000Z

287

Gate-diffusion input (GDI): a power-efficient method for digital combinatorial circuits  

Science Journals Connector (OSTI)

Gate diffusion input (GDI) - a new technique of low-power digital combinatorial circuit design - is described. This technique allows reducing power consumption, propagation delay, and area of digital circuits while maintaining low complexity of logic ...

A. Morgenshtein; A. Fish; I. A. Wagner

2002-10-01T23:59:59.000Z

288

Positions in the glun2c-containing nmdar regulate alcohol sensitivity and ion channel gating.  

E-Print Network [OSTI]

?? The N-methyl-D-aspartate (NMDA) receptor, a subtype of glutamate-gated ion channel, has been shown to be a major target of ethanol in the central nervous (more)

Wu, Man

2014-01-01T23:59:59.000Z

289

A high-k ferroelectric relaxor terpolymer as a gate dielectric for orgnaic thin film transistors  

SciTech Connect (OSTI)

Poly(vinylidenefluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CFE)) is a ferroelectric terpolymer relaxor with a static dielectric constant of 50, which was developed using defect modification to eliminate remnant polarization in the normal ferroelectric PVDF. In this work, this solution processable terpolymer was used as the gate insulator in bottom gated organic thin-film transistors with a pentacene semiconductor layer. Due to the high dielectric constant of P(VDF-TrFE- CFE), a large capacitive coupling between the gate and channel can be achieved which causes a high charge concentration at the interface of the semiconductor and dielectric layers. In this device, an on/ off ratio of 104 and a low minimum operation gate voltage (5-10 V) were attained

Wu, Shan [Pennsylvania State University; Shao, Ming [ORNL; Burlingame, Quinn [Pennsylvania State University; Chen, Xiangzhong [Penn state university; Lin, Minren [Pennsylvania State University; Xiao, Kai [ORNL; Zhang, Qiming [Pennsylvania State University

2013-01-01T23:59:59.000Z

290

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide  

E-Print Network [OSTI]

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

Kim, Sehun

291

AN AUTOZEROING FLOATING-GATE BANDPASS FILTER Paul Hasler, Bradley A. Minch, and Chris Diorio  

E-Print Network [OSTI]

is the thermal Figure 1: An autozeroing oating-gate ampli er AFGA that uses pFET hot-electron injection a bandpass oating-gate ampli er that uses tunneling and pFET hot-electron injection to set its DC operating the current through the pFET. Steady state occurs when the injection current is equal to the tunneling current

Diorio, Chris

292

Yield estimates and comparisons for full custom, standard cell, and gate array design methodologies  

E-Print Network [OSTI]

YIELD ESTIMATES AND COMPARISONS FOR FULL CUSTOM, STANDARD CELL, AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by MARCELLA EVELYN NORTE Submitted to the Office of Graduate Studies of Texas A&M University in partial fulfillment... of the requirements for the degree of MASTER OF SCIENCE December 1990 Major Subject: Electrical Engineering YIELD ESTIMATES AND COMPARISONS FOR FULL CUSTOM, STANDARD CELL, AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by MARCELLA EVELYN NORTE Approved...

Norte, Marcella Evelyn

2012-06-07T23:59:59.000Z

293

Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing  

E-Print Network [OSTI]

A quantum computer can solve hard problems - such as prime factoring, database searching, and quantum simulation - at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection, by distributing a logical state among many physical qubits via quantum entanglement. Superconductivity is an appealing platform, as it allows for constructing large quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code is a natural choice for error correction, as it uses only nearest-neighbour coupling and rapidly-cycled entangling gates. The gate fidelity requirements are modest: The per-step fidelity threshold is only about 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92% and a two-qubit gate fidelity up to 99.4%. This places Josephson quantum computing at the fault-tolerant threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger (GHZ) state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

R. Barends; J. Kelly; A. Megrant; A. Veitia; D. Sank; E. Jeffrey; T. C. White; J. Mutus; A. G. Fowler; B. Campbell; Y. Chen; Z. Chen; B. Chiaro; A. Dunsworth; C. Neill; P. O`Malley; P. Roushan; A. Vainsencher; J. Wenner; A. N. Korotkov; A. N. Cleland; John M. Martinis

2014-02-19T23:59:59.000Z

294

Correlation of gross tumor volume excursion with potential benefits of respiratory gating  

SciTech Connect (OSTI)

Purpose: To test the hypothesis that the magnitude of thoracic tumor motion can be used to determine the desirability of respiratory gating. Methods and materials: Twenty patients to be treated for lung tumors had computed tomography image data sets acquired under assisted breath hold at normal inspiration (100% tidal volume), at full expiration (0% tidal volume), and under free breathing. A radiation oncologist outlined gross tumor volumes (GTVs) on the breath-hold computed tomographic images. These data sets were registered to the free-breathing image data set. Two sets of treatment plans were generated: one based on an internal target volume explicitly formed from assessment of the excursion of the clinical target volume (CTV) through the respiratory cycle, representing an ungated treatment, and the other based on the 0% tidal volume CTV, representing a gated treatment with little margin for residual motion. Dose-volume statistics were correlated to the magnitude of the motion of the center of the GTV during respiration. Results: Patients whose GTVs were >100 cm{sup 3} showed little decrease in lung dose under gating. The other patients showed a correlation between the excursion of the center of the GTV and a reduction in potential lung toxicity. As residual motion increased, the benefits of respiratory gating increased. Conclusion: Gating seems to be advantageous for patients whose GTVs are <100 cm{sup 3} and for whom the center of the GTV exhibits significant motion, provided residual motion under gating is kept small.

Starkschall, George [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)]. E-mail: gstarksc@mdanderson.org; Forster, Kenneth M. [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Kitamura, Kei [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Department of Radiology, Hokkaido University, Graduate School of Medicine, Sapporo (Japan); Cardenas, Alex [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Tucker, Susan L. [Department of Biomathematics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Stevens, Craig W. [Department of Radiation Oncology, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)

2004-11-15T23:59:59.000Z

295

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-07T23:59:59.000Z

296

Oxidation Resistant Graphite Studies  

SciTech Connect (OSTI)

The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

W. Windes; R. Smith

2014-07-01T23:59:59.000Z

297

Acoustic sounding of the tropical marine boundary layer during GATE  

Science Journals Connector (OSTI)

A vertically pointed monostatic acoustic sounder was installed on the NOAA ShipOCEANOGRAPHER during the Global Atmospheric Research Program Atlantic Tropical Experiment (GATE). The sounderantenna was mounted on a gyrocontrolled platform to compensate for the ship'spitch and roll motions. Extensive measures such as mounting the antenna assembly on a vibration isolator and installing absorbing cuffs had to be taken to reduce interference by ship?generated noise. Back?scattered acoustic data obtained from up to 850 m height describe the tropical marine boundary layer in unique and hitherto unseen detail. During undisturbed weather conditions the facsimile record showed convective plumes rising from the surface of the water up to 400 m. Storm?generated disturbances resulted in a substantial modification of the boundary layer; low?level multilayered undulating inversions formed from cool outflow currents. The inversions persisted for up to 16 hours. Low?level patchy cumulus clouds produced characteristic hummock?shaped acoustic echoes. Analysis of the Doppler frequency shift of the returns allowed the determination of vertical velocities within these clouds and underlying convective plumes.

P. A. Mandics; J. E. Gaynor; F. F. Hall Jr.

1976-01-01T23:59:59.000Z

298

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect (OSTI)

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metaloxidesemiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

299

Photochemistry of aromatic hydrocarbons: implications for ozone and secondary organic aerosol formation  

E-Print Network [OSTI]

formation is essential to assess the urban air pollution. This dissertation consists of two parts: (1) theoretical investigation of the toluene oxidation initiated by OH radical using quantum chemical and kinetic calculations to understand the mechanism of O...

Suh, Inseon

2006-08-16T23:59:59.000Z

300

METAL OXIDE NANOPARTICLES  

SciTech Connect (OSTI)

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

InGaZnO thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indiumgalliumzinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

302

Oxidation induced localized creep deformation in Zircaloy-2  

Science Journals Connector (OSTI)

Abstract Extensive plastic deformation in the metal underneath the oxide scale in autoclave tested Zircaloy-2 was studied using transmission electron microscopy (TEM). It was concluded that the plastic deformation is created by creep during oxidation, and is not caused by surface treatment, sample preparation or cooling from autoclave temperatures. Evidence of large strains was found in the form of dislocation tangles, dislocation patches and sub-grain formation, and also indications of twinning were found. The heavily deformed layer is around a few ?m thick and no obvious difference could be seen between alloys with different strength or different oxide thickness.

Pia Tejland; Hans-Olof Andrn

2014-01-01T23:59:59.000Z

303

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain  

SciTech Connect (OSTI)

Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5??10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

2014-01-13T23:59:59.000Z

304

Water Formatics Engineered formation of nanobubbles networks  

E-Print Network [OSTI]

of nanobubbles [3,4,11,14]. 2. A decrease in surface tension from 72 to 68 dyn/cm [11]. 3. Increase nanobubble network is the out come of a self organization process due to the collective effect of bubble-bubble term stability of water structure is resulted from the formation of dense array of stable gas

Jacob, Eshel Ben

305

Formation of Hollow Gallium Nitride Spheres via Silica Sphere Templates  

Science Journals Connector (OSTI)

Formation of Hollow Gallium Nitride Spheres via Silica Sphere Templates ... To form reasonably uniform gallium oxide shells, the amounts of urea and water added to the reaction mixture were varied. ... Due to the low solubility of urea in 2-propanol, addition of a larger amount of urea than that used in this study is not desirable. ...

Chun-Neng Lin; Michael H. Huang

2008-12-30T23:59:59.000Z

306

Full-Swing Gate Diffusion Input logic-Case-study of low-power CLA adder design  

Science Journals Connector (OSTI)

Full Swing Gate Diffusion Input (FS-GDI) methodology is presented. The proposed methodology is applied to a 40nm Carry Look Ahead Adder (CLA). The CLA is implemented mainly using GDI full-swing F1 and F2 gates, which are the counterparts of standard ... Keywords: Alternative logic family, Carry Look Ahead (CLA) adder, Full-Swing GDI, Gate Difusion Input (GDI), Low power

Arkadiy Morgenshtein; Viacheslav Yuzhaninov; Alexey Kovshilovsky; Alexander Fish

2014-01-01T23:59:59.000Z

307

Experimental Studies of Hydroxyl Radical Initiated Tropospheric Oxidation of Unsaturated Hydrocarbons  

E-Print Network [OSTI]

radical, followed by chain propagating radical reactions. Their oxidation is the major source for ground level ozone formation in both rural and urban area and understanding their chemistry is essential for regional air quality modeling. Until recently...

Ghosh, Buddhadeb

2011-10-21T23:59:59.000Z

308

Iron(III) Oxides from Thermal ProcessesSynthesis, Structural and Magnetic Properties, Mssbauer Spectroscopy Characterization, and Applications  

Science Journals Connector (OSTI)

Structural and magnetic properties, methods of synthesis, and applications of seven iron(III) oxide polymorphs, including rare beta, epsilon, amorphous, and high-pressure forms, are reviewed. ... Their discoveries as well as the majority of formation processes are connected with thermal transformations of iron-bearing materials in an oxidizing atmosphere. ... Iron(III) oxide in all its forms is one of the most used metal oxides with various applications in many scientific and industrial fields. ...

Radek Zboril; Miroslav Mashlan; Dimitris Petridis

2002-02-28T23:59:59.000Z

309

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

310

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

311

Ethylene Oxide Explosions  

Science Journals Connector (OSTI)

... THE occasional occurrence of ethylene oxide explosions during the fumigation of dried fruit has led us to undertake a detailed ... yielded results somewhat like those for acetaldehyde1,2.. Cool flames can be initiated in ethylene oxide air mixtures in the neighbourhood of 330 C. at atmospheric pressure. ...

J. H. BURGOYNE; F. A. BURDEN

1948-07-31T23:59:59.000Z

312

A Reactive Oxide Overlayer on Rh Nanoparticles during CO Oxidation and Its Size Dependence Studied by in Situ Ambient Pressure XPS  

SciTech Connect (OSTI)

CO oxidation is one of the most studied heterogeneous reactions, being scientifically and industrially important, particularly for removal of CO from exhaust streams and preferential oxidation for hydrogen purification in fuel cell applications. The precious metals Ru, Rh, Pd, Pt, and Au are most commonly used for this reaction because of their high activity and stability. Despite the wealth of experimental and theoretical data, it remains unclear what is the active surface for CO oxidation under catalytic conditions for these metals. In this communication, we utilize in situ synchrotron ambient pressure X-ray photoelectron spectroscopy (APXPS) to monitor the oxidation state at the surface of Rh nanoparticles during CO oxidation and demonstrate that the active catalyst is a surface oxide, the formation of which is dependent on particle size. The amount of oxide formed and the reaction rate both increase with decreasing particle size.

Grass, Michael E.; Zhang, Yawen; Butcher, Derek R.; Park, Jeong Y.; Li, Yimin; Bluhm, Hendrik; Bratlie, Kaitlin M.; Zhang, Tianfu; Somorjai, Gabor A.

2008-09-15T23:59:59.000Z

313

Oxidative Degradation of Monoethanolamine  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Oxidative Degradation of Monoethanolamine Oxidative Degradation of Monoethanolamine Susan Chi Gary T. Rochelle* (gtr@che.utexas.edu, 512-471-7230) The University of Texas at Austin Department of Chemical Engineering Austin, Texas 78712 Prepared for presentation at the First National Conference on Carbon Sequestration, Washington, DC, May 14-17, 2001 Abstract Oxidative degradation of monoethanolamine (MEA) was studied under typical absorber condition of 55°C. The rate of evolution of NH 3 , which was indicative of the overall rate of degradation, was measured continuously in a batch system sparged with air. Dissolved iron from 0.0001 mM to 1 mM yields oxidation rates from 0.37 to 2 mM/hr in MEA solutions loaded with 0.4 mole CO 2 / mole MEA. Ethylenediaminetetraacetic acid (EDTA) and N,N-bis(2- hydroxyethyl)glycine effectively decrease the rate of oxidation in the presence of iron by 40 to

314

Dissociation of human thalamic and cortical SEP gating as revealed by intrathalamic recordings under muscle relaxation  

Science Journals Connector (OSTI)

Gating refers to a reduction of cortical somatosensory evoked potentials (SEP) under multiple simultaneous afferent inputs. This study used the opportunity for intrathalamic recordings in patients with movement disorders to clarify to what extent cortical SEP gating is preceded by thalamic gating. Recordings were performed in 10 patients, narcotised by intravenous propofol when receiving implantation of a therapeutic deep brain stimulator system. SEP were elicited by an 8.1-Hz median nerve stimulation at twice motor threshold and were recorded simultaneously from both intrathalamic and scalp electrodes before and after the application of the depolarising muscle blocker succinylcholine which eliminated both the background muscular tone and the repetitive muscle twitches caused by the median nerve stimulation. Peripheral compound action potentials recorded at the upper arm remained unchanged after complete muscle relaxation, proving a continuously effective nerve stimulation. In contrast, the primary cortical SEP component (N20) was significantly increased under succinylcholine (+17%). This cortical release from gating was not paralleled, however, by an increased thalamic response; rather, the primary thalamic response (P16) showed a slight (?9%) but highly significant amplitude reduction. As the recordings were performed in narcotised patients, any potentially variable attentional bias on part of the subjects can be excluded as confounding factor when comparing the two experimental conditions with vs. without reafferent somatosensory inflow. Thus, given the high signal-to-noise ratio of intrathalamically recorded SEP, the present study shows a distinct thalamocortical dissociation with the primary somatosensory cortex representing the predominant level exhibiting SEP gating.

Fabian Klostermann; Ren Gobbele; Helmut Buchner; Gabriel Curio

2002-01-01T23:59:59.000Z

315

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents [OSTI]

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

316

Carbon monoxide oxidation on Rh(111): Velocity and angular distributions of the CO2 product  

E-Print Network [OSTI]

Carbon monoxide oxidation on Rh(111): Velocity and angular distributions of the CO2 product J. I and angular distributions of CO2 produced by CO oxidation on Rh 111 have been measured as a function a fundamental and a practical point of view. CO2 formation serves as a model recombina- tion reaction

Sibener, Steven

317

Instructions for use Role of Cerium Oxide in the Enhancement of Activity for the Oxygen  

E-Print Network [OSTI]

activity for various fuel cell reactions, such as the hydrogen oxidation reaction (HOR),4 oxygen reduction. Recently, CeOx has been also utilized as a cocatalyst with Pt catalyst for ORR in PEM fuel cells.17 at the Pt oxide formation potential. INTRODUCTION Fuel cells, especially polymer electrolyte membrane (PEM

Tsunogai, Urumu

318

Phase-Transfer-Catalyzed Oxidations  

Science Journals Connector (OSTI)

Phase-transfer catalysis (PTC) offers many excellent opportunities for conducting oxidation reactions using inexpensive primary oxidants such as oxygen, sodium hypochlorite, hydrogen peroxide, electrooxidation...

Charles M. Starks; Charles L. Liotta; Marc E. Halpern

1994-01-01T23:59:59.000Z

319

Regenerative catalytic oxidation  

SciTech Connect (OSTI)

Currently Regenerative Thermal Oxidizers (R.T.O.`s) are an accepted technology for the control of volatile organic compounds (VOC`s) and hazardous air pollutants (HAP`s). This control technology, when introduced, offered substantial reductions in operating costs, especially auxiliary fuel requirements when compared to existing control technologies such as recuperative thermal and recuperative catalytic oxidizers. While these savings still exist, there is a demand for control of new and/or hybrid technologies, one of which is Regenerative Catalytic Oxidizers (R.C.O.`s). This paper will explore the development of regenerative catalytic oxidation from the theoretical stage through pilot testing through a commercial installation. The operating cost of R.C.O.`s will be compared to R.T.O.`s to verify the savings that are achievable through the use of regenerative catalytic oxidation. In the development of this technology, which is a combination of two (2) existing technologies, R.T.O.`s and catalysis, a second hybrid technology was explored and pilot tested. This is a combination R.C.O. for VOC and HAP control and simultaneous SCR (Selective Catalytic Reduction) for NOx (Oxides of Nitrogen) control. Based on the pilot and full scale testing, both regenerative catalytic oxidizers and systems which combine R.C.O. with SCR for both VOC and NOx reduction are economically viable and are in fact commercially available. 6 figs., 2 tabs.

Gribbon, S.T. [Engelhard Process Emission Systems, South Lyon, MI (United States)

1996-12-31T23:59:59.000Z

320

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Broader source: Energy.gov (indexed) [DOE]

Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Broader source: Energy.gov (indexed) [DOE]

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

322

ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred  

Broader source: Energy.gov (indexed) [DOE]

Announces 2012 Energy Innovation Summit Featuring Bill Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012 at the Gaylord Convention Center just outside Washington, D.C. Bill Gates, founder and chairman of Microsoft; Fred Smith, chairman, president and CEO of FedEx; and Lee Scott, former CEO of Wal-Mart; will join Secretary Chu and Director Majumdar as distinguished keynote speakers. "After two successful Summits, I'm excited to once again bring some of

323

Photon-energy-dependent light effects in organic nano-floating-gate nonvolatile memories  

Science Journals Connector (OSTI)

Abstract A pentacene-based organic field-effect transistor nonvolatile memory, in which polystyrene covered Au nanoparticles act as the nano-floating-gate, is probed under different illumination conditions. The memory window can be greatly enlarged upon illumination depending on incident photon energy and intensity, and two light effects are proposed and discussed. The minority multiplication effect enhances the minority carrier tunneling into the nano-floating-gate, resulting in the remarkable positive VT shift. The excitation-induced injection effect is strongly photon energy dependent, and it is responsible for the significant negative VT shift. Appropriate illumination is favorable for reducing the programming/erasing voltage of organic nano-floating-gate nonvolatile memories.

Xu Gao; Chang-Hai Liu; Xiao-Jian She; Qin-Liang Li; Jie Liu; Sui-Dong Wang

2014-01-01T23:59:59.000Z

324

Materials Selection for Oxide-based Resistive Random Access Memories  

E-Print Network [OSTI]

The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO2, TiO2, Ta 2O5, and Al2O3, to define a materials selection process. O vacancies have the lowest defect formation energy in the O...

Guo, Yuzheng; Robertson, John

2014-12-05T23:59:59.000Z

325

A hot oxidant, 3-NO[subscript 2]Y[subscript 122] radical, unmasks conformational gating in reductase  

E-Print Network [OSTI]

Escherichia coli ribonucleotide reductase is an ?2?2 complex that catalyzes the conversion of nucleotides to deoxynucleotides and requires a diferric-tyrosyl radical (Y[superscript ]) cofactor to initiate catalysis. The ...

Yokoyama, Kenichi

326

The Conformation of Bound GMPPNP Suggests a Mechanism for Gating the Active Site of the SRP \\{GTPase\\}  

Science Journals Connector (OSTI)

Background: The signal recognition particle (SRP) is a phylogenetically conserved ribonucleoprotein that mediates cotranslational targeting of secreted and membrane proteins to the membrane. Targeting is regulated by GTP binding and hydrolysis events that require direct interaction between structurally homologous NG \\{GTPase\\} domains of the SRP signal recognition subunit and its membrane-associated receptor, SR?. Structures of both the apo and GDP bound NG domains of the prokaryotic SRP54 homolog, Ffh, and the prokaryotic receptor homolog, FtsY, have been determined. The structural basis for the GTP-dependent interaction between the two proteins, however, remains unknown. Results: We report here two structures of the NG \\{GTPase\\} of Ffh from Thermus aquaticus bound to the nonhydrolyzable GTP analog GMPPNP. Both structures reveal an unexpected binding mode in which the ?-phosphate is kinked away from the binding site and magnesium is not bound. Binding of the GTP analog in the canonical conformation found in other \\{GTPase\\} structures is precluded by constriction of the phosphate binding P loop. The structural difference between the Ffh complex and other \\{GTPases\\} suggests a specific conformational change that must accompany movement of the nucleotide from an inactive to an active binding mode. Conclusions: Conserved side chains of the \\{GTPase\\} sequence motifs unique to the SRP subfamily may function to gate formation of the active GTP bound conformation. Exposed hydrophobic residues provide an interaction surface that may allow regulation of the GTP binding conformation, and thus activation of the GTPase, during the association of SRP with its receptor.

Savita Padmanabhan; Douglas M. Freymann

2001-01-01T23:59:59.000Z

327

Catalytic production of metal carbonyls from metal oxides  

DOE Patents [OSTI]

This invention relates to the formation of metal carbonyls from metal oxides and specially the formation of molybdenum carbonyl and iron carbonyl from their respective oxides. Copper is used here in admixed form or used in chemically combined form as copper molybdate. The copper/metal oxide combination or combined copper is utilized with a solvent, such as toluene and subjected to carbon monoxide pressure of 25 atmospheres or greater at about 150 to 260/sup 0/C. The reducing metal copper is employed in catalytic concentrations or combined concentrations as CuMoO/sub 4/ and both hydrogen and water present serve as promoters. It has been found that the yields by this process have been salutary and that additionally the catalytic metal may be reused in the process to good effect. 3 tables.

Sapienza, R.S.; Slegeir, W.A.; Foran, M.T.

1984-01-06T23:59:59.000Z

328

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL  

E-Print Network [OSTI]

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach · Parallel planes: PSOFC · Other: combustor, reformer Solid Oxide Fuel Cell Electrochemistry Cell Reactions · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

Mease, Kenneth D.

329

Engineering a C-Phase quantum gate: optical design and experimental realization  

E-Print Network [OSTI]

A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

Andrea Chiuri; Chiara Greganti; Paolo Mataloni

2012-04-12T23:59:59.000Z

330

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays  

SciTech Connect (OSTI)

Low-frequency noise is used to study the electronic transport in arrays of 14?nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Clment, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France)] [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincar, 59652 Villeneuve d'Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23T23:59:59.000Z

331

Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography  

E-Print Network [OSTI]

Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

Z. L. Yuan; J. F. Dynes; A. J. Shields

2011-06-14T23:59:59.000Z

332

A proposal for the implementation of quantum gates with photonic-crystal coupled cavity waveguides  

E-Print Network [OSTI]

Quantum computers require technologies that offer both sufficient control over coherent quantum phenomena and minimal spurious interactions with the environment. We show, that photons confined to photonic crystals, and in particular to highly efficient waveguides formed from linear chains of defects doped with atoms can generate strong non-linear interactions which allow to implement both single and two qubit quantum gates. The simplicity of the gate switching mechanism, the experimental feasibility of fabricating two dimensional photonic crystal structures and integrability of this device with optoelectronics offers new interesting possibilities for optical quantum information processing networks.

Dimitris G. Angelakis; Marcelo Franca Santos; Vassilis Yannopapas; Artur Ekert

2007-04-12T23:59:59.000Z

333

A procedure for localizing faults to specific gates using power supply transient signals is described. The method  

E-Print Network [OSTI]

of gates along sensitized paths from the composite transient signals measured at the power ports or C4s by a defect-free chip or simulation to identify the position of a defect. The transients produced at the C4sAbstract A procedure for localizing faults to specific gates using power supply transient signals

Plusquellic, James

334

Activation of the Inositol (1,4,5)-Triphosphate Calcium Gate Receptor Is Required for HIV-1 Gag Release  

Science Journals Connector (OSTI)

...27 Jagannath, A., and M. J. A. Wood. 2009. Localization of double-stranded...inositol (1,4,5)-triphosphate calcium gate receptor is required for HIV-1 Gag release...5)-triphosphate receptor (IP3R) gates intracellular Ca(2+) stores. Following...

Lorna S. Ehrlich; Gisselle N. Medina; Mahfuz B. Khan; Michael D. Powell; Katsuhiko Mikoshiba; Carol A. Carter

2010-04-28T23:59:59.000Z

335

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced by Truncated Constructs  

E-Print Network [OSTI]

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced, United Kingdom Voltage-gated calcium channel 1 subunits consist of four domains (I­IV), each with six by the cytoplasmic I-II loop of Cav2.2. It requires transmembrane seg- ments, because the isolated Cav2.2 N terminus

Dolphin, Annette C.

336

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

337

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect (OSTI)

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

338

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3  

E-Print Network [OSTI]

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3 , Bo Zhang 3 , Vincent of the algorithm used for the minimization. Index Terms -- C-Arm, computed tomography, ECG- gating, augmented arises from the synchronization with the patient's electrocardiogram (ECG), which is necessary to avoid

Paris-Sud XI, Université de

339

Syngas Oxidation Mechanism  

Science Journals Connector (OSTI)

A comprehensive analysis of synthesis gas (syngas) oxidation kinetics in wide ranges of temperature ... on the basis of the reaction mechanism of syngas ignition and combustion in air. A vast set of experimental ...

A. M. Starik; N. S. Titova; A. S. Sharipov

2010-09-01T23:59:59.000Z

340

Controlled CO preferential oxidation  

DOE Patents [OSTI]

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

Fusion Techniques for the Oxidation of Refractory Actinide Oxides  

SciTech Connect (OSTI)

Small-scale experiments were performed to demonstrate the feasibility of fusing refractory actinide oxides with a series of materials commonly used to decompose minerals, glasses, and other refractories as a pretreatment to dissolution and subsequent recovery operations. In these experiments, 1-2 g of plutonium or neptunium oxide (PuO2 or NpO2) were calcined at 900 degrees Celsius, mixed and heated with the fusing reagent(s), and dissolved. For refractory PuO2, the most effective material tested was a lithium carbonate (Li2CO3)/sodium tetraborate (Na2B4O7) mixture which aided in the recovery of 90 percent of the plutonium. The fused product was identified as a lithium plutonate (Li3PuO4) by x-ray diffraction. The use of a Li2CO3/Na2B4O7 mixture to solubilize high-fired NpO2 was not as effective as demonstrated for refractory PuO2. In a small-scale experiment, 25 percent of the NpO2 was oxidized to a neptunium (VI) species that dissolved in nitric acid. The remaining neptunium was then easily recovered from the residue by fusing with sodium peroxide (Na2O2). Approximately 70 percent of the neptunium dissolved in water to yield a basic solution of neptunium (VII). The remainder was recovered as a neptunium (VI) solution by dissolving the residue in 8M nitric acid. In subsequent experiments with Na2O2, the ratio of neptunium (VII) to (VI) was shown to be a function of the fusion temperature, with higher temperatures (greater than approximately 400 degrees C) favoring the formation of neptunium (VII). The fusion of an actual plutonium-containing residue with Na2O2 and subsequent dissolution was performed to demonstrate the feasibility of a pretreatment process on a larger scale. Sodium peroxide was chosen due to the potential of achieving higher actinide recoveries from refractory materials. In this experiment, nominally 10 g of a graphite-containing residue generated during plutonium casting operations was initially calcined to remove the graphite. Removal of combustible material prior to a large-scale fusion with Na2O2 is needed due to the large amount of heat liberated during oxidation. Two successive fusions using the residue from the calcination and the residue generated from the initial dissolution allowed recovery of 98 percent of the plutonium. The fusion of the residue following the first dissolution was performed at a higher temperature (600 degrees Celsius versus 450 degrees Celsius during the first fusion). The ability to recover most of the remaining plutonium from the residue suggest the oxidation efficiency of the Na2O2 fusion improves with higher temperatures similar to results observed with NpO2 fusion.

Rudisill, T.S.

1999-04-15T23:59:59.000Z

342

Site-Directed Amino Acid Substitutions in the Hydroxylase ? Subunit of Butane Monooxygenase from Pseudomonas butanovora: Implications for Substrates Knocking at the Gate  

Science Journals Connector (OSTI)

...intricacies of the leucine gate influence catalysis at...opening the leucine gate and shifting the geometry...where green is carbon, red is oxygen, blue is nitrogen...is through the leucine gate toward the diiron center...H. Shim, and T. K. Wood. 2002. Directed evolution...

Kimberly H. Halsey; Luis A. Sayavedra-Soto; Peter J. Bottomley; Daniel J. Arp

2006-07-01T23:59:59.000Z

343

Modeling of Diesel Oxidation Catalyst  

Science Journals Connector (OSTI)

Modeling of Diesel Oxidation Catalyst ... Optimization of hydrocarbon (HC) oxidation over a diesel oxidation catalyst (DOC) requires consideration of (i) HC gas diffusion into the catalyst layer, (ii) HC gas adsorption and desorption from catalyst sites, and (iii) kinetics of the oxidation reaction. ... Mutagenicity of Diesel Engine Exhaust Is Eliminated in the Gas Phase by an Oxidation Catalyst but Only Slightly Reduced in the Particle Phase ...

Yasushi Tanaka; Takashi Hihara; Makoto Nagata; Naoto Azuma; Akifumi Ueno

2005-09-30T23:59:59.000Z

344

Stable Oxide Nanoparticle Clusters Obtained by Complexation  

E-Print Network [OSTI]

We report on the electrostatic complexation between polyelectrolyte-neutral copolymers and oppositely charged 6 nm-crystalline nanoparticles. For two different dispersions of oxide nanoparticles, the electrostatic complexation gives rise to the formation of stable nanoparticle clusters in the range 20 - 100 nm. It is found that inside the clusters, the particles are pasted together by the polyelectrolyte blocks adsorbed on their surface. Cryo-transmission electronic microscopy allows to visualize the clusters and to determine the probability distributions functions in size and in aggregation number. The comparison between light scattering and cryo-microscopy results suggests the existence of a polymer brush around the clusters.

J. -F. Berret; A. Sehgal; M. Morvan; O. Sandre; A. Vacher; M. Airiau

2006-08-08T23:59:59.000Z

345

Formation of hollow nanocrystals through the nanoscale kirkendall effect  

SciTech Connect (OSTI)

We demonstrate that hollow nanocrystals can be synthesized through a mechanism analogous to the Kirkendall Effect, in which pores form due to the difference in diffusion rates between two components in a diffusion couple. Cobalt nanocrystals are chosen as a primary example to show that their reaction in solution with oxygen, sulfur or selenium leads to the formation of hollow nanocrystals of the resulting oxide and chalcogenides. This process provides a general route to the synthesis of hollow nanostructures of large numbers of compounds. A simple extension of this process yields platinum-cobalt oxide yolk-shell nanostructures which may serve as nanoscale reactors in catalytic applications.

Yin, Yadong; Rioux, Robert M.; Erdonmez, Can K.; Hughes, Steven; Somorjai, Gabor A.; Alivisatos, A. Paul

2004-03-11T23:59:59.000Z

346

Guardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism  

E-Print Network [OSTI]

that pose the highest-priority risks of nuclear theft, and to evaluate policy approaches to strengtheningGuardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism ­ and Identifying the Highest-Priority Risks of Nuclear Theft by Matthew Bunn SB and SM, Political Science, MIT, 1985 SUBMITTED

de Weck, Olivier L.

347

7-Gate Kinetic AMPA Model Kinetics to match EPSCs from calyx of Held  

E-Print Network [OSTI]

7-Gate Kinetic AMPA Model · Kinetics to match EPSCs from calyx of Held · Multiple closed, open and EPSC amplitude Bruce Graham Department of Computing Science and Mathematics, University of Stirling, U, including the calyx of Held in the mammalian auditory system. Such depression may be mediated

Graham, Bruce

348

The Thinnest Molecular Separation Sheet by Graphene Gates of Single-Walled Carbon Nanohorns  

Science Journals Connector (OSTI)

Graduate School of Science, Chiba University, 1-33 Yayoi, Inage, Chiba, Chiba 263-8522, Japan ... transport properties; surface science; separation science; molecular modeling; green chemistry; molecular gates; picostructures ... The author would like to thank Dr. M. Yudasaka from the Nanotube Research Center, Advanced Industrial Science and Technology, Japan and Prof. S. Iijima from Meijo University, Japan for supplying the NHs. ...

Tomonori Ohba

2014-10-27T23:59:59.000Z

349

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control  

E-Print Network [OSTI]

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control Who we are: The International Center for Tropical Agriculture (CIAT) is a member institute of the Consultative Group on International Agricultural Research (CIAR). Based in Cali, Colombia, we focus

Ferrara, Katherine W.

350

Circadian gating of the psbAIII high light response in Synechococcus sp. strain PCC 7942  

E-Print Network [OSTI]

(1-5 fold) during the peaks of the cycle. We also found that in a clock null strain the lack of an oscillator does not entirely negate the light response of PpsbAIII::luxAB; however, this response does not demonstrate gating. In contrast...

Shelton, Jeffrey Lyn

2000-01-01T23:59:59.000Z

351

Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time  

SciTech Connect (OSTI)

We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If common mode triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

2012-10-01T23:59:59.000Z

352

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database  

E-Print Network [OSTI]

Elephant Beer and Shinto Gates: Managing Similar Concepts in a Multilingual Database Martin" and "tembo" are completely interchangeable when talking about elephants, but bring you different brands as "rouge" in French or "nyekundu" in Swahili. An "elephant" is an elephant, whether it is "éléphant

353

Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors  

SciTech Connect (OSTI)

A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

Won Lee, Sang [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Dongseok, E-mail: energy.suh@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Young Lee, Si [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Hee Lee, Young, E-mail: leeyoung@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-04-21T23:59:59.000Z

354

Unique Functional Properties of a Sensory Neuronal P2X ATP-Gated Channel from Zebrafish  

E-Print Network [OSTI]

of native P2X receptor channels evokes a fast inward current carried by mono- valent and calcium ions in a broad range of calcium- dependent signaling events from the neurogenic control of smooth muscle, and a cysteine-rich extracellular loop resembles that of recently discovered proton-gated channels (Wald- mann

Séguéla, Philippe

355

Ligand Gated Ion Channel Functionality Assays Robert P. Hayes, Kumud Raj Poudel and James A. Brozik  

E-Print Network [OSTI]

was to devise a method suitable to test the functionality of the entire family of cysteine-loop ligand gated ion substrate was infused with calcium ions that were trapped by the POPC bilayer. Once the assembly was formed. Electrochemical measurements were taken using a calcium ion sensitive electrode. The assemblies were interrogated

Collins, Gary S.

356

Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights  

E-Print Network [OSTI]

PWP-076 Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow.ucei.berkeley.edu/ucei #12;Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights- mission use. The North American Electric Reliability Council NERC is in the process of implementing

California at Berkeley. University of

357

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in  

E-Print Network [OSTI]

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in Cardiac Myocytes H-dependent inactivation can be modulated by changes in cytoplasmic Mg~+. INTRODUCTION Magnesium is an important constituent of the intracellular milieu. Despite the importance of magnesium as an essential cofactor

358

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors  

E-Print Network [OSTI]

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

Dekker, Cees

359

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1  

E-Print Network [OSTI]

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1 J. Yan,1,2 R. J. Suess,3 T. E photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse There is growing recognition that graphene has excep- tional potential as a new optoelectronic material, which has

Murphy, Thomas E.

360

Current transport, gate dielectrics and band gap engineering in graphene devices  

E-Print Network [OSTI]

Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

Perebeinos, Vasili

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Channel gating forces govern accuracy of mechano-electrical transduction in hair cells  

Science Journals Connector (OSTI)

...imposed on the measurements by the series resistance of the patch. Hair-bundle displacement was measured...The most important parameter is the elementary gating force, Z, defined as...Support, Non-U.S. Gov't | Animals Electric Stimulation Electrophysiology Hair Cells...

Sietse M. van Netten; Theo Dinklo; Walter Marcotti; Corn J. Kros

2003-01-01T23:59:59.000Z

362

The use of gated radionuclide angiography in the diagnosis of cardiac contusion  

SciTech Connect (OSTI)

No currently used diagnostic test is an accurate predictor of patients who will develop morbidity or mortality from cardiac contusion. In a prospective study we used gated cardiac radionuclide angiography to assess cardiac function in 30 patients with blunt chest trauma, and we compared the results of this test with those of other diagnostic studies for cardiac contusion to determine whether gated angiography is a more accurate predictor of serious cardiac injury. Diagnostic tests included the following: serial electrocardiograms (ECG), serial creatine phosphokinase muscle-brain isoenzyme (CPK-MB) and lactic dehydrogenase (LDH) isoenzymes, gated cardiac radionuclide angiography, and technetium-99m (Tc-99m) pyrophosphate scintigraphy. Abnormal studies were present in 26 patients; 22 showed abnormalities in CPK-MB, 19 on ECG, and five on gated scan. No patient demonstrated an abnormal Tc-99m pyrophosphate scan or abnormal elevation of LDH isoenzyme. Although no diagnostic test was predictive of morbidity and mortality, CPK-MB isoenzyme was the only test to correlate with morbidity and mortality. Morbidity and mortality correlated most closely with the number of associated major injuries and the presence of hypotension or hypoxia.

Fenner, J.E.; Knopp, R.; Lee, B.; dos Santos, P.A.; Wessel, R.J.; Dang, C.V.; Parks, S.N.

1984-09-01T23:59:59.000Z

363

Thermoanalytical Studies of Ga-substituted MBa2Cu3O7? Superconducting Compounds Formation (M=Yb, Eu)  

Science Journals Connector (OSTI)

A thermoanalytical study in non-isothermal conditions was realized on Ga-substituted MBa2Cu3O7-? superconducting compounds formation (M=Yb, Eu). The presence of different oxides in the reaction mixtures leads to ...

R. Redac; M. Zaharescu

364

Transformation of carbon monoxide dimer surface structures on yttrium oxide modified by silver  

SciTech Connect (OSTI)

It has been established that introducing ions of silver(II) in yttrium(III) oxide leads to the formation of a significant concentration of a paramagnetic dimer species (CO)/sub 2/-in the course of the adsorption of carbon monoxide, and that these dimers exhibit high thermal stability and reactivity. Reactions are proposed for the formation of the dimer species (CO)/sub 2//sup 2 -/ and (CO)/sub 2//sup -/ on the surface of the Ag/Y/sub 2/O/sub 3/ catalyst that involve the reduction of the anion vacancies and a change in the oxidation state of the silver ions. Modifying the yttrium oxide with ionic silver leads to a marked decrease in the strength of the oxidative ability of the surface of the catalyst for CO, while the nature of the active sites of the yttrium oxide, which adsorbs CO in three forms, remains unchanged.

Vydrin, S.N.; Bobolev, A.V.; Loginov, A.Yu.

1987-09-10T23:59:59.000Z

365

Thermally Oxidized Silicon  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

366

Oxidative Tritium Decontamination System  

SciTech Connect (OSTI)

The Princeton Plasma Physics Laboratory, Tritium Systems Group has developed and fabricated an Oxidative Tritium Decontamination System (OTDS), which is designed to reduce tritium surface contamination on various components and items. The system is configured to introduce gaseous ozone into a reaction chamber containing tritiated items that require a reduction in tritium surface contamination. Tritium surface contamination (on components and items in the reaction chamber) is removed by chemically reacting elemental tritium to tritium oxide via oxidation, while purging the reaction chamber effluent to a gas holding tank or negative pressure HVAC system. Implementing specific concentrations of ozone along with catalytic parameters, the system is able to significantly reduce surface tritium contamination on an assortment of expendable and non-expendable items. This paper will present the results of various experimentation involving employment of this system.

Charles A. Gentile; John J. Parker; Gregory L. Guttadora; Lloyd P. Ciebiera

2002-02-11T23:59:59.000Z

367

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

1999-01-01T23:59:59.000Z

368

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

2001-01-01T23:59:59.000Z

369

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

370

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

371

Introduction Format Proprietaire -Standard  

E-Print Network [OSTI]

Code for Information Interchange) 4. Unicode IFT-1215 Stefan Monnier 7 #12;BCD IFT-1215 Stefan MonnierSOMMAIRE Introduction Format Propri´etaire -Standard Code Alphanum´erique Entr´ee Alphanum : !, ?, ", (, . . . · Caract`eres sp´eciaux : *, $, ¿, . . . Quelques standards utilis´es pour les coder en binaires 1. BCD

Monnier, Stefan

372

Hierarchical galaxy formation  

Science Journals Connector (OSTI)

......such as the cooling of gas in haloes, the formation...effects on interstellar gas of energy released by young stars, the production of heavy elements, the...dynamics of the cooling gas are calculated in full...relatively small computational cost. The major disadvantage......

Shaun Cole; Cedric G. Lacey; Carlton M. Baugh; Carlos S. Frenk

2000-11-21T23:59:59.000Z

373

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

374

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z (n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

375

Oxidation behavior of Cr-Cr{sub 2}Nb alloys  

SciTech Connect (OSTI)

Oxidation of hypoeutectic Cr-Cr{sub 2}Nb alloys containing 6 and 12% Nb at 950 C resulted in formation of a multiproduct scale consisting of a continuous Cr{sub 2}O{sub 3} outer layer and an inner region of discrete CrNbO{sub 4} products interspersed with Cr{sub 2}O{sub 3}. Overall oxidation behavior resembled that of Cr as reactions with the Cr-rich phase tended to dominate. Oxidation resistance, in terms of reaction kinetics and scale adherence, increased with increasing volume fraction of the Cr-Cr{sub 2}Nb eutectic phase. A model for the oxidation of these alloys based on the growth of Cr{sub 2}O{sub 3} on the Cr-rich matrix regions and the formation of a slower growing CrNbO{sub 4} on the Cr{sub 2}Nb-enriched phase can qualitatively explain the development of the multiproduct scale and the observed gravimetric and spallation results. Possible microstructural/compositional modifications to improve oxidation resistance are suggested.

Tortorelli, P.F.; Pint, B.A.

1996-12-31T23:59:59.000Z

376

A Porphyrin-Stabilized Iridium Oxide Water Oxidation Catalyst  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

A Porphyrin-Stabilized Iridium Oxide Water Oxidation Catalyst Authors: Sherman, B. D., Pillai, S., Kodis, G., Bergkamp, J., Mallouk, T. E., Gust, D., Moore, T. A., and Moore, A. L....

377

Robust quantum gates and a bus architecture for quantum computing with rare-earth-ion doped crystals  

E-Print Network [OSTI]

We present a composite pulse controlled phase gate which together with a bus architecture improves the feasibility of a recent quantum computing proposal based on rare-earth-ion doped crystals. Our proposed gate operation is tolerant to variations between ions of coupling strengths, pulse lengths, and frequency shifts, and it achieves worst case fidelities above 0.999 with relative variations in coupling strength as high as 10% and frequency shifts up to several percent of the resonant Rabi frequency of the laser used to implement the gate. We outline an experiment to demonstrate the creation and detection of maximally entangled states in the system.

Janus Wesenberg; Klaus Moelmer

2003-01-09T23:59:59.000Z

378

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide  

E-Print Network [OSTI]

as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel for use in solid oxide fuel cells. This cutting edge area of research continues to be important as energy prove useful for solid oxide fuel cells. METHODS Commercial molybdenum dioxide was used for all tests

Collins, Gary S.

379

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2  

E-Print Network [OSTI]

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

Derisi, Joseph

380

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2012-09-11T23:59:59.000Z

382

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2014-05-20T23:59:59.000Z

383

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2013-04-16T23:59:59.000Z

384

Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation D. De Salvador1  

E-Print Network [OSTI]

in order to distinguish the pure thermal effects from those produced by the I injection under oxidationCarbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation D. De Salvador1 , E to the formation and growth of C containing precipitates which are promoted by the I injection and act as a sink

385

Ultrafast Graphene Oxide Humidity Sensors  

Science Journals Connector (OSTI)

Ultrafast Graphene Oxide Humidity Sensors ... Graphene oxide can be exploited in humidity and temperature sensors with a number of convenient features such as flexibility, transparency and suitability for large-scale manufacturing. ... Here we show that the two-dimensional nature of graphene oxide and its superpermeability to water combine to enable humidity sensors with unprecedented response speed (?30 ms response and recovery times). ...

Stefano Borini; Richard White; Di Wei; Michael Astley; Samiul Haque; Elisabetta Spigone; Nadine Harris; Jani Kivioja; Tapani Ryhnen

2013-11-09T23:59:59.000Z

386

Doped palladium containing oxidation catalysts  

DOE Patents [OSTI]

A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Mohajeri, Nahid

2014-02-18T23:59:59.000Z

387

Hybrid Photonic Hyper-Controlled-Not Gate with the Dipole Induced Transparency in Weak-Coupling Regime  

E-Print Network [OSTI]

We present a hybrid hyper-controlled-not (hyper-CNOT) gate for hyperparallel photonic quantum computing based on both the polarization and spatial-mode degrees of freedom (DOFs) of a two-photon system, which is identical to two CNOT gates operating at the same time on four photons in one DOF. This proposal is implemented with the optical reflection-transmission property of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, which is suitable for the robust and flexible quantum information processing based on both the spatial-mode and polarization DOFs of photon systems in Purcell regime. With the hybrid hyper-CNOT gate, more quantum logic gate operations can be accomplished with less resources in a definite period of time, and the influence from photonic dissipation and environment noise can be suppressed.

Bao-Cang Ren; Fu-Guo Deng

2014-11-02T23:59:59.000Z

388

E-Print Network 3.0 - atp-gated p2x4 ion Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion Search Powered by Explorit Topic List Advanced Search Sample search results for: atp-gated p2x4 ion Page: << < 1 2 3 4 5 > >> 1 introduction browse basic search advanced...

389

Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn  

Broader source: Energy.gov [DOE]

Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

390

Abstract----Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is  

E-Print Network [OSTI]

and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2- D numerical. The quantitative analysis were conducted by Silvaco Atlas, a 2-D numerical device simulator [4]. We read

Lee, Jong Duk

391

Positions in the GluN2C-Containing NMDAR Regulate Alcohol Sensitivity and Ion Channel Gating.  

E-Print Network [OSTI]

??The N-methyl-D-aspartate (NMDA) receptor, a subtype of glutamate-gated ion channel, has been shown to be a major target of ethanol in the central nervous system (more)

Wu, Man

2014-01-01T23:59:59.000Z

392

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke Energy  

Broader source: Energy.gov (indexed) [DOE]

Notrees Energy Storage Project Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind generation * Integrate storage with intermittent renewable energy production * Improve use of power-producing assets by storing energy during non-peak generation periods * Demonstrate benefits of using fast response energy storage to provide ancillary services for grid management * Verify that energy storage solutions can operate within the ERCOT market protocols * Demonstrate ramp control and Energy Storage System * Technology: Advanced lead-acid battery * OEM Partner - Xtreme Power (XP) * 36 MW / 24 MWh output * Modules housed in ~ 6,000 sq. ft. building Project Activities to Date * Site construction began December

393

Effects of spectral entanglement in polarization-entanglement swapping and type-I fusion gates  

Science Journals Connector (OSTI)

We examine how spectral entanglement in polarization-entangled photon states generated from bulk-crystal, spontaneous parametric down-conversion affects the success of entanglement swapping and type-I fusion gates. We quantify the success of the entanglement swapping and fusion gates by calculating the bipartite concurrence and residual tangle, respectively, in terms of the joint spectral probability amplitudes of the initial broad-bandwidth polarization-entangled states. We find that both polarization-entanglement measures depend strongly on the initial spectral entanglement, as well as on the configuration of the independent sources. Specifically, when spectral differences correlate with polarization, the optimal source configuration is different for the two protocols. We conclude that this distinction is founded in how the underlying Bell-state measurement and quantum-erasure techniques respond differently to distinguishing spectral information.

Travis S. Humble and Warren P. Grice

2008-02-11T23:59:59.000Z

394

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network [OSTI]

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

395

Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability  

SciTech Connect (OSTI)

We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (?{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375?C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high ?{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90?mV/decade, and a low V{sub th} of ?0.64?V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from ?1?V up to 2.7?V.

Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China) [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)] [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China) [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)] [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

2013-11-11T23:59:59.000Z

396

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates  

ScienceCinema (OSTI)

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

2012-03-21T23:59:59.000Z

397

Gated x-ray framing camera image of a direct-drive cylindrical implosion  

SciTech Connect (OSTI)

Gated X-ray images of laser-driven implosions can provide movies of typically 16 frames with {approximately} 80 ps time resolution and 10 {micro}m spatial resolution. Cylindrical implosions allow study of convergent hydrodynamics but with excellent diagnostic access down the axis of the cylinder. This example from a recent cylindrical implosion campaign on the OMEGA laser provides quantitative data on the growth of ablative Rayleigh-Taylor instabilities in convergent geometry.

Voss, S.A.; Barnes, C.W.; Oertel, J.A.; Watt, R.G. [Los Alamos National Lab., NM (United States)] [Los Alamos National Lab., NM (United States); Boehly, T.R.; Bradley, D.K.; Knauer, J.P.; Pien, G. [Univ. of Rochester, NY (United States). Lab. for Laser Energetics] [Univ. of Rochester, NY (United States). Lab. for Laser Energetics

1999-02-01T23:59:59.000Z

398

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode  

SciTech Connect (OSTI)

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27T23:59:59.000Z

399

Modeling the current behavior of the digital BiCMOS gate  

E-Print Network [OSTI]

CMOS gate showing the pull-up and pull-down sections 6 Schematics of the pull-up section Pull-up equivalent circuit model . Equivalent circuit model 10 Simplified equivalent circuit model Equivalent circuit model neglecting ATF Collector current... with ATF effect vs without ATF effect 14 Modified circuit model 16 10 Comparison of this work versus SPICE simulation Typical collector current response 17 12 13 Equivalent circuit for 0 ? t0 Equivalent circuit after t0 21 14 Base current...

Tang, Zhilong

1995-01-01T23:59:59.000Z

400

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network [OSTI]

new circuit topology for IGFET, which on average shows 33.8% lower leakage and 34.9% lower area at the cost of 2.8% increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized... ????????????????????????????????????????????????? 5 III.1 Power-delay product for FO4 inverter ????????????????????????????????????? 12 III.2 Power-delay product for 51 Stage ring oscillator ??????????????????????????? 12 IV.1 Delay distribution histogram...

Singh, Amrinder

2011-10-21T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Graphene and Graphene Oxide: Biofunctionalization and Applications...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

402

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm...

Chen, Ze; Chen, Jin-Da; Zhang, Xiu-Ling; Sun, Zhi-Yu; Huang, Wen-Xue; Wang, Jian-Song; Guo, Zhong-Yan; Xiao, Guo-Qing

2013-01-01T23:59:59.000Z

403

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm. The module can also be applied to other cases for precisely simulating optical photons propagating in scintillators.

Ze Chen; Zheng-Guo Hu; Jin-Da Chen; Xiu-Ling Zhang; Zhi-Yu Sun; Wen-Xue Huang; Jian-Song Wang; Zhong-Yan Guo; Guo-Qing Xiao

2013-09-15T23:59:59.000Z

404

A large Bradbury Nielsen ion gate with flexible wire spacing based on photo-etched stainless steel grids  

E-Print Network [OSTI]

Bradbury Nielsen gates are well known devices used to switch ion beams and are typically applied in mass or mobility spectrometers for separating beam constituents by their different flight or drift times. A Bradbury Nielsen gate consists of two interleaved sets of electrodes. If opposite polarity of the same amplitude is applied the gate is closed, and for identical (zero) potential the gate is open. Whereas former realizations of the device employ actual wires resulting in difficulties with winding, fixing and tensioning them, our approach is to use two grids photo-etched onto a metallic foil. This design allows for simplified construction of gates covering large beam sizes up to at least 900\\,mm$^2$ with variable wire spacing down to 250\\,\\textmu m. By changing the grids the wire spacing can be varied without major changes. A gate of this design was installed and systematically tested at TRIUMF's ion trap facility, TITAN, for use with radioactive beams to separate isobaric contamination of charge states.

Brunner, T; O'Sullivan, K; Simon, M C; Kossick, M; Ettenauer, S; Gallant, A T; Man, E; Bishop, D; Good, M; Gratta, G; Dilling, J

2011-01-01T23:59:59.000Z

405

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors  

SciTech Connect (OSTI)

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for free without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24T23:59:59.000Z

406

Design and optimisation of quantum logic circuits for a three-qubit Deutsch-Jozsa algorithm implemented with optically-controlled, solid-state quantum logic gates  

E-Print Network [OSTI]

We analyse the design and optimisation of quantum logic circuits suitable for the experimental demonstration of a three-qubit quantum computation prototype based on optically-controlled, solid-state quantum logic gates. In these gates, the interaction between two qubits carried by the electron-spin of donors is mediated by the optical excitation of a control particle placed in their proximity. First, we use a geometrical approach for analysing the entangling characteristics of these quantum gates. Then, using a genetic programming algorithm, we develop circuits for the refined Deutsch-Jozsa algorithm investigating different strategies for obtaining short total computational times. We test two separate approaches based on using different sets of entangling gates with the shortest possible gate computation time which, however, does not introduce leakage of quantum information to the control particles. The first set exploits fast approximations of controlled-phase gates as entangling gates, while the other one arbitrary entangling gates with a shorter gate computation time compared to the first set. We have identified circuits with consistently shorter total computation times when using controlled-phase gates.

A. Del Duce; S. Savory; P. Bayvel

2009-10-09T23:59:59.000Z

407

Visible Light-Driven Water Oxidation by Ir oxide Clusters Coupledto Single Cr Centers in Mesoporous Silica  

SciTech Connect (OSTI)

Visible light-induced water oxidation has been demonstrated at an Ir oxide nanocluster coupled to a single Cr{sup VI} site on the pore surface of MCM-41 mesoporous silica. The photocatalytic unit was assembled by the reaction of surface Cr=O groups with Ir(acac){sub 3} precursor followed by calcination at 300 C and bond formation monitored by FT-Raman and FT-IR spectroscopy. High-resolution Z-contrast electron micrographs of the calcined material combined with energy-dispersive X-ray spot analysis confirmed the occlusion of Ir oxide nanoparticles inside the mesopores. Oxygen evolution of an aqueous suspension of the Ir{sub x}O{sub y}-CrMCM-41 upon visible light irradiation of the Cr{sup VI}-O ligand-to-metal charge-transfer absorption was monitored mass-spectrometrically. Comparison of the product yields for samples with low Cr content (Cr/Si {le} 0.02) and high Cr content (Cr/Si = 0.05) indicates that only isolated Cr centers are capable of extracting electrons from Ir oxide clusters, while di- or polychromate species are not. Water oxidation at a multielectron-transfer catalyst coupled to a single metal center has not been demonstrated before. The ability to drive water oxidation with a single metal center as electron pump offers opportunities for coupling the oxygen-evolving photocatalytic unit to reducing sites in the nanoporous scaffold.

Nakamura, Ryuhei; Frei, Heinz

2006-07-10T23:59:59.000Z

408

Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect  

SciTech Connect (OSTI)

A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

2008-09-15T23:59:59.000Z

409

Plutonium Oxidation and Subsequent Reduction by Mn (IV) Minerals  

SciTech Connect (OSTI)

Plutonium sorbed to rock tuff was preferentially associated with manganese oxides. On tuff and synthetic pyrolusite (Mn{sup IV}O{sub 2}), Pu(IV) or Pu(V) was initially oxidized, but over time Pu(IV) became the predominant oxidation state of sorbed Pu. Reduction of Pu(V/VI), even on non-oxidizing surfaces, is proposed to result from a lower Gibbs free energy of the hydrolyzed Pu(IV) surface species versus that of the Pu(V) or Pu(VI) surface species. This work suggests that despite initial oxidation of sorbed Pu by oxidizing surfaces to more soluble forms, the less mobile form of Pu, Pu(IV), will dominate Pu solid phase speciation during long term geologic storage. The safe design of a radioactive waste or spent nuclear fuel geologic repository requires a risk assessment of radionuclides that may potentially be released into the surrounding environment. Geochemical knowledge of the radionuclide and the surrounding environment is required for predicting subsurface fate and transport. Although difficult even in simple systems, this task grows increasingly complicated for constituents, like Pu, that exhibit complex environmental chemistries. The environmental behavior of Pu can be influenced by complexation, precipitation, adsorption, colloid formation, and oxidation/reduction (redox) reactions (1-3). To predict the environmental mobility of Pu, the most important of these factors is Pu oxidation state. This is because Pu(IV) is generally 2 to 3 orders of magnitude less mobile than Pu(V) in most environments (4). Further complicating matters, Pu commonly exists simultaneously in several oxidation states (5, 6). Choppin (7) reported Pu may exist as Pu(IV), Pu(V), or Pu(VI) oxic natural groundwaters. It is generally accepted that plutonium associated with suspended particulate matter is predominantly Pu(IV) (8-10), whereas Pu in the aqueous phase is predominantly Pu(V) (2, 11-13). The influence of the character of Mn-containing minerals expected to be found in subsurface repository environments on Pu oxidation state distributions has been the subject of much recent research. Kenney-Kennicutt and Morse (14), Duff et al. (15), and Morgenstern and Choppin (16) observed oxidation of Pu facilitated by Mn(IV)-bearing minerals. Conversely, Shaughnessy et al. (17) used X-ray Absorption near-edge spectroscopy (XANES) to show reduction of Pu(VI) by hausmannite (Mn{sup II}Mn{sub 2}{sup III}O{sub 4}) and manganite ({gamma}-Mn{sup III}OOH) and Kersting et al., (18) observed reduction of Pu(VI) by pyrolusite (Mn{sup IV}O{sub 2}). In this paper, we attempt to reconcile the apparently conflicting datasets by showing that Mn-bearing minerals can indeed oxidize Pu, however, if the oxidized species remains on the solid phase, the oxidation step competes with the formation of Pu(IV) that becomes the predominant solid phase Pu species with time. The experimental approach we took was to conduct longer term (approximately two years later) oxidation state analyses on the Pu sorbed to Yucca Mountain tuff (initial analysis reported by Duff et al., (15)) and measure the time-dependant changes in the oxidation state distribution of Pu in the presence of the Mn mineral pyrolusite.

KAPLAN, DANIEL

2005-09-13T23:59:59.000Z

410

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect (OSTI)

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

411

Chitosan as green kinetic inhibitors for gas hydrate formation  

Science Journals Connector (OSTI)

The kinetic inhibiting effect of a number of chitosans on hydrate formation was investigated using methane and methane/ethane gas mixtures. The results indicated that chitosan was a good kinetic inhibitor. The induction time of gas hydrate formation evidently increased with the degree of deacetylation (DD), however, when DD was higher than 80%, the effect of DD on the induction time was negligible. Moreover, it was found that the molecular weight (MW) of chitosan and the addition of polyethylene oxide (PEO) had little effect on the induction time. The optimal concentration of chitosan was found to be 0.6 wt%. Finally, the mechanisms of the kinetic inhibitor on the hydrate formation were discussed.

Yongjun Xu; Minlin Yang; Xiaoxi Yang

2010-01-01T23:59:59.000Z

412

Vinpocetine attenuates lipid accumulation and atherosclerosis formation  

SciTech Connect (OSTI)

Highlights: Vinpocetine attenuates hyperlipidemia-induced atherosclerosis in a mouse model. Vinpocetine antagonizes ox-LDL uptake and accumulation in macrophages. Vinpocetine blocks the induction of ox-LDL receptor LOX-1 in vitro and in vivo. -- Abstract: Atherosclerosis, the major cause of myocardial infarction and stroke, is a chronic arterial disease characterized by lipid deposition and inflammation in the vessel wall. Cholesterol, in low-density lipoprotein (LDL), plays a critical role in the pathogenesis of atherosclerosis. Vinpocetine, a derivative of the alkaloid vincamine, has long been used as a cerebral blood flow enhancer for treating cognitive impairment. Recent study indicated that vinpocetine is a potent anti-inflammatory agent. However, its role in the pathogenesis of atherosclerosis remains unexplored. In the present study, we show that vinpocetine significantly reduced atherosclerotic lesion formation in ApoE knockout mice fed with a high-fat diet. In cultured murine macrophage RAW264.7 cells, vinpocetine markedly attenuated oxidized LDL (ox-LDL) uptake and foam cell formation. Moreover, vinpocetine greatly blocked the induction of ox-LDL receptor 1 (LOX-1) in cultured macrophages as well as in the LOX-1 level in atherosclerotic lesions. Taken together, our data reveal a novel role of vinpocetine in reduction of pathogenesis of atherosclerosis, at least partially through suppressing LOX-1 signaling pathway. Given the excellent safety profile of vinpocetine, this study suggests vinpocetine may be a therapeutic candidate for treating atherosclerosis.

Cai, Yujun [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States)] [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States); Li, Jian-Dong [Center for Inflammation, Immunity and Infection, and Department of Biology, Georgia State University, Atlanta, GA 30303 (United States)] [Center for Inflammation, Immunity and Infection, and Department of Biology, Georgia State University, Atlanta, GA 30303 (United States); Yan, Chen, E-mail: Chen_Yan@urmc.rochester.edu [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States)] [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States)

2013-05-10T23:59:59.000Z

413

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800.degree. C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800.degree. C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700.degree. C. at a low cost

Dunning, John S. (Corvallis, OR); Alman, David E. (Salem, OR)

2002-11-05T23:59:59.000Z

414

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

Dunning, John S.; Alman, David E.

2002-11-05T23:59:59.000Z

415

Implementation of controlled phase shift gates and Collins version of Deutsch-Jozsa algorithm on a quadrupolar spin-7/2 nucleus using non-adiabatic geometric phases  

E-Print Network [OSTI]

In this work Controlled phase shift gates are implemented on a qaudrupolar system, by using non-adiabatic geometric phases. A general procedure is given, for implementing controlled phase shift gates in an 'N' level system. The utility of such controlled phase shift gates, is demonstrated here by implementing 3-qubit Deutsch-Jozsa algorithm on a 7/2 quadrupolar nucleus oriented in a liquid crystal matrix.

T. Gopinath; Anil Kumar

2009-09-22T23:59:59.000Z

416

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

SciTech Connect (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

417

Formation, characterization and reactivity of adsorbed oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Formation, characterization and reactivity of adsorbed oxygen on BaOPt(111). Formation, characterization and reactivity of adsorbed oxygen on BaOPt(111). Abstract: The formation...

418

Structural insight into the oxidation-sensing mechanism of the antibiotic resistance of regulator MexR  

SciTech Connect (OSTI)

MexR functions as the primary regulator of the mexAB-oprM multidrug efflux expression in Pseudomonas aeruginosa. It has been shown that MexR senses oxidative stress by interprotomer disulphide bond formation between redox-active cysteines. This oxidation induces MexR to dissociate from the promoter DNA, thus activating the transcriptional expression of efflux pump genes. In this study, we present the crystal structure of MexR in its oxidized form at a resolution of 2.1 {angstrom}. This crystal structure reveals the mechanism by which oxidative signal allosterically derepresses the MexR-controlled transcription activation.

Chen, Hao; Yi, Chengqi; Zhang, Jin; Zhang, Wenru; Ge, Zhiyun; Yang, Cai-Guang; He, Chuan (UC); (Chinese Aca. Sci.); (Nanjing)

2010-11-05T23:59:59.000Z

419

Enhanced Thermal Conductivity Oxide Fuels  

SciTech Connect (OSTI)

the purpose of this project was to investigate the feasibility of increasing the thermal conductivity of oxide fuels by adding small fractions of a high conductivity solid phase.

Alvin Solomon; Shripad Revankar; J. Kevin McCoy

2006-01-17T23:59:59.000Z

420

Anodic oxidation of zircaloy-2  

Science Journals Connector (OSTI)

The anodic polarization of zircaloy-2 in different electrolytic baths has been investigated in order to obtain thick oxide films with properties suitable for wear applications.

A. Conte; A. Borello; A. Cabrini

1976-07-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Downhole steam generator having a downhole oxidant compressor  

DOE Patents [OSTI]

Apparatus and method for generation of steam in a borehole for penetration into an earth formation wherein a downhole oxidant compressor is used to compress relatively low pressure (atmospheric) oxidant, such as air, to a relatively high pressure prior to mixing with fuel for combustion. The multi-stage compressor receives motive power through a shaft driven by a gas turbine powered by the hot expanding combustion gases. The main flow of compressed oxidant passes through a velocity increasing nozzle formed by a reduced central section of the compressor housing. An oxidant bypass feedpipe leading to peripheral oxidant injection nozzles of the combustion chamber are also provided. The downhole compressor allows effective steam generation in deep wells without need for high pressure surface compressors. Feedback preheater means are provided for preheating fuel in a preheat chamber. Preheating of the water occurs in both a water feed line running from aboveground and in a countercurrent water flow channel surrounding the combustor assembly. The countercurrent water flow channels advantageously serve to cool the combustion chamber wall. The water is injected through slotted inlets along the combustion chamber wall to provide an unstable boundary layer and stripping of the water from the wall for efficient steam generation. Pressure responsive doors are provided at the steam outlet for closing and sealing the combustion chamber from entry of reservoir fluids in the event of a flameout.

Fox, Ronald L. (Albuquerque, NM)

1983-01-01T23:59:59.000Z

422

A study on the oxidation characteristics of cast irons containing aluminum  

SciTech Connect (OSTI)

Isothermal-oxidation characteristics of cast irons containing aluminum (5-15% Al) from 700 to 1000{degrees}C in air have been studied. In addition to mass-gain measurements, the morphology and composition of the oxide scales have been examined by SEM-EDX system and XRD analysis. A normal Fe-5Al-C alloy does not develop protective, adherent scales. Even the addition of misch metal and calcium silicide to such an alloy does not improve its oxidation resistance. But aluminum cast iron develops considerable oxidation resistance only when a sufficient quantity of silicon is also present in the alloy. Treatment of the alloy with misch metal and calcium silicide together assists in protective scale formation. Among the alloys investigated Fe-15Al-Si-C treated with misch metal and calcium silicide shows minimum oxidation at 1000{degrees}C.

Ghosh, S.; Prodhan, A. [National Metallurigical Laboratory, Jamshedpur (India); Mohanty, O.N. [Tata Steel, Jamshedpur (India)] [and others

1996-02-01T23:59:59.000Z

423

Innovative Powder Processing of Oxide Dispersion Strengthened ODS Ferritic Stainless Steels  

SciTech Connect (OSTI)

An innovative gas atomization reaction synthesis technique was employed as a viable method to dramatically lower the processing cost for precursor oxide dispersion forming ferritic stainless steel powders (i.e., Fe-Cr-(Hf,Ti)-Y). During this rapid solidification process the atomized powders were enveloped by a nano-metric Cr-enriched metastable oxide film. Elevated temperature heat treatment was used to dissociate this metastable oxide phase through oxygen exchange reactions with Y-(Hf,Ti) enriched intermetallic compound precipitates. These solid state reactions resulted in the formation of highly stable nano-metric mixed oxide dispersoids (i.e., Y-Ti-O or Y-Hf-O) throughout the alloy microstructure. Subsequent high temperature (1200 C) heat treatments were used to elucidate the thermal stability of each nano-metric oxide dispersoid phase. Transmission electron microscopy coupled with X-ray diffraction was used to evaluate phase evolution within the alloy microstructure.

Rieken, Joel; Anderson, Iver; Kramer, Matthew

2011-04-01T23:59:59.000Z

424

Operation of staged membrane oxidation reactor systems  

SciTech Connect (OSTI)

A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

Repasky, John Michael

2012-10-16T23:59:59.000Z

425

HRTEM Study of Oxide Nanoparticles in K3-ODS Ferritic Steel Developed for Radiation Tolerance  

SciTech Connect (OSTI)

Crystal and interfacial structures of oxide nanoparticles and radiation damage in 16Cr-4.5Al-0.3Ti-2W-0.37 Y{sub 2}O{sub 3} ODS ferritic steel have been examined using high-resolution transmission electron microscopy (HRTEM) techniques. Oxide nanoparticles with a complex-oxide core and an amorphous shell were frequently observed. The crystal structure of complex-oxide core is identified to be mainly monoclinic Y{sub 4}Al{sub 2}O{sub 9} (YAM) oxide compound. Orientation relationships between the oxide and the matrix are found to be dependent on the particle size. Large particles (> 20 nm) tend to be incoherent and have a spherical shape, whereas small particles (< 10 nm) tend to be coherent or semi-coherent and have a faceted interface. The observations of partially amorphous nanoparticles and multiple crystalline domains formed within a nanoparticle lead us to propose a three-stage mechanism to rationalize the formation of oxide nanoparticles containing core/shell structures in as-fabricated ODS steels. Effects of nanoparticle size and density on cavity formation induced by (Fe{sup 8+} + He{sup +}) dual-beam irradiation are briefly addressed.

Hsiung, L; Fluss, M; Tumey, S; Kuntz, J; El-Dasher, B; Wall, M; Choi, W; Kimura, A; Willaime, F; Serruys, Y

2009-11-02T23:59:59.000Z

426

Analytical expressions for the gate utilization factors of passive multiplicity counters including signal build-up  

SciTech Connect (OSTI)

In the realm of nuclear safeguards, passive neutron multiplicity counting using shift register pulse train analysis to nondestructively quantify Pu in product materials is a familiar and widely applied technique. The approach most commonly taken is to construct a neutron detector consisting of {sup 3}He filled cylindrical proportional counters embedded in a high density polyethylene moderator. Fast neutrons from the item enter the moderator and are quickly slowed down, on timescales of the order of 1-2 {micro}s, creating a thermal population which then persists typically for several 10's {micro}s and is sampled by the {sup 3}He detectors. Because the initial transient is of comparatively short duration it has been traditional to treat it as instantaneous and furthermore to approximate the subsequent capture time distribution as exponential in shape. With these approximations simple expressions for the various Gate Utilization Factors (GUFs) can be obtained. These factors represent the proportion of time correlated events i.e. Doubles and Triples signal present in the pulse train that is detected by the coincidence gate structure chosen (predelay and gate width settings of the multiplicity shift register). More complicated expressions can be derived by generalizing the capture time distribution to multiple time components or harmonics typically present in real systems. When it comes to applying passive neutron multiplicity methods to extremely intense (i.e. high emission rate and highly multiplying) neutron sources there is a drive to use detector types with very fast response characteristics in order to cope with the high rates. In addition to short pulse width, detectors with a short capture time profile are also desirable so that a short coincidence gate width can be set in order to reduce the chance or Accidental coincidence signal. In extreme cases, such as might be realized using boron loaded scintillators, the dieaway time may be so short that the build-up (thermalization transient) within the detector cannot be ignored. Another example where signal build-up might be observed is when a {sup 3}He based system is used to track the evolution of the time correlated signal created by a higher multiplying item within a reflective configuration such as the measurement of a spent fuel assembly. In this work we develop expressions for the GUFs which include signal build-up.

Croft, Stephen [Los Alamos National Laboratory; Evans, Louise G [Los Alamos National Laboratory; Schear, Melissa A [Los Alamos National Laboratory

2010-01-01T23:59:59.000Z

427

Universal conductance fluctuations in electrolyte-gated SrTiO{sub 3} nanostructures  

SciTech Connect (OSTI)

We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a signature of phase-coherent transport in mesoscopic devices. From the universal conductance fluctuations, we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. The dephasing rate has a temperature-independent offset, which could possibly be explained by the presence of unscreened local magnetic moments in the sample.

Stanwyck, Sam W. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Gallagher, P.; Williams, J. R.; Goldhaber-Gordon, David [Department of Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Physics, Stanford University, Stanford, California 94305 (United States)

2013-11-18T23:59:59.000Z

428

Simple Template-Based Method to Produce Bradbury-Nielsen Gates  

Science Journals Connector (OSTI)

A Bradbury-Nielsen gate (BNG) consists of two interleaved and electrically isolated sets of wires and can transmit or deflect charged particles by applying a varying voltage difference across the two wire sets. We present a simple template-based method to fabricate \\{BNGs\\} with wire spacings as small as 50 ?m with minimal use of a microscope. The small wire spacing allows modulation rates at tens of megahertz. Using this method, we have fabricated four \\{BNGs\\} with wire spacings of 500, 200, 100, and 50 ?m using 10 ?m gold-coated tungsten wires. The performance of the four \\{BNGs\\} is characterized using an imaging detector and compared with theoretical predictions.

Oh Kyu Yoon; Ignacio A. Zuleta; Matthew D. Robbins; Griffin K. Barbula; Richard N. Zare

2007-01-01T23:59:59.000Z

429

Catalytic wet oxidation of phenolic wastes  

E-Print Network [OSTI]

Possible catalyst deactivation problems High capital, low operating Supercritical water oxidation (SCWO) Feasible only at high organic concentra- tions High Fast reaction, complete oxidation Severe reaction conditions, canosion problems... of milder reaction conditions and is much less energy intensive. Thus, catalytic wet oxidation would be an alternative to solvent extraction, supercritical water oxidation, homogeneous oxidation, and incineration. It should also be feasible at low...

Thomas, Brook James

1995-01-01T23:59:59.000Z

430

Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications  

E-Print Network [OSTI]

Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.solidoxide.html, Tubular Solid Oxide Fuel Cell Technology,Oxide Films for Solid Oxide Fuel Cell Applications by Jason

Nicholas, Jason.D.

2007-01-01T23:59:59.000Z

431

Mesophase Formation in Heavy Oil.  

E-Print Network [OSTI]

??Coke formation is a major problem in the petroleum industry because of its effect on liquid yield, catalyst deactivation, and fouling of reactor internals and (more)

Bagheri, Seyed Reza

2012-01-01T23:59:59.000Z

432

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Automated Proximity Access at Gate 17 and Sector 30 Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help facilitate access. During the transition period, July 26-August 9, 2013 users can inform Security at Gate 17 that they are checking in and proceed to the URA office in Building 120; however, after August 9 th , users without a proximity activated ID need to stop at

433

Reducing the contribution of the power sector to ground-level ozone pollution : an assessment of time-differentiated pricing of nitrogen oxide emissions  

E-Print Network [OSTI]

Nitrogen oxide (NOx) is a prevalent air pollutant across the United States and a requisite precursor for tropospheric (ground-level) ozone formation. Both pollutants significantly impact human health and welfare, so National ...

Craig, Michael T. (Michael Timothy)

2014-01-01T23:59:59.000Z

434

Structural Characterization and Catalytic Activity of Nanosized CexM1-xO2 (M = Zr and Hf) Mixed Oxides  

Science Journals Connector (OSTI)

RS measurements suggest a defective structure of the mixed oxides resulting in the formation of oxygen vacancies. ... Improvements in such features are currently in demand for designing better catalytic cartridges for new-generation cleaner cars. ...

Benjaram M. Reddy; Pankaj Bharali; Pranjal Saikia; Sang-Eon Park; Maurits W. E. van den Berg; Martin Muhler; Wolfgang Grnert

2008-07-16T23:59:59.000Z

435

A new approach for the production of 2,5-furandicarboxylic acid by in situ oxidation of 5-hydroxymethylfurfural starting from fructose  

Science Journals Connector (OSTI)

The production of 2,5-furandicarboxylic acid (FDCA) starting with fructose as substrate via acid-catalyzed formation and subsequent oxidation of 5-hydroxymethylfurfural (HMF) was investigated. It was shown...

Martin Krger; Ulf Pre; Klaus-Dieter Vorlop

436

Numerical Modeling and Experimental Study of Combustion and Soot Formation in a Direct Injection Diesel Engine  

Science Journals Connector (OSTI)

Numerical Modeling and Experimental Study of Combustion and Soot Formation in a Direct Injection Diesel Engine ... The major problems associated with diesel engines are the high levels of nitrogen oxides (NOX) and particulate emissions. ... (11)?Flagan, R. C.; Seinfeld, J. H. Fundamentals of Air Pollution Engineering; Prentice Hall Inc.:? New York, 1988. ...

T. L. Chan; X. B. Cheng

2007-04-10T23:59:59.000Z

437

Formation of Two-Dimensional Concentration Pulses on Microdesigned Composite Catalyst Surfaces  

Science Journals Connector (OSTI)

We study the effect of microdesigned composite geometries on pattern formation during the catalytic oxidation of CO on Pt-Ti, Pt-Rh, and Pt-Pd composite catalysts. In particular, we find experimentally (and rationalize through modeling) that adsorbate surface transport through the second (active) component drastically affects the shapes and interactions of concentration patterns (traveling pulses) observed on pure Pt.

Michael Pollmann; Harm Hinrich Rotermund; Gerhard Ertl; Xiujiang Li; Ioannis G. Kevrekidis

2001-06-25T23:59:59.000Z

438

Evidence for Epoxide Formation from the Electrochemical Reduction of Ethylene Carbonate  

E-Print Network [OSTI]

Evidence for Epoxide Formation from the Electrochemical Reduction of Ethylene Carbonate Xuerong agreed that the electrochemical reduction of ethylene carbonate EC plays an important role the monoethylcarbonate lithium salt. Ethylene oxide is suggested as a possible, but not exclusive, reduction product

439

Deep oxidation of glucose in enzymatic fuel cells through a synthetic enzymatic pathway containing a cascade of two thermostable dehydrogenases  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Deep Deep oxidation of glucose in enzymatic fuel cells through a synthetic enzymatic pathway containing a cascade of two thermostable dehydrogenases Zhiguang Zhu a , Fangfang Sun a , Xiaozhou Zhang a,d , Y.-H. Percival Zhang a,b,c,d,n a Biological Systems Engineering Department, Virginia Polytechnic Institute and State University (Virginia Tech), 210-A Seitz Hall, Blacksburg, Virginia 24061, USA b Institute for Critical Technology and Applied Science (ICTAS), Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061, USA c DOE BioEnergy Science Center (BESC), Oak Ridge, Tennessee 37831, USA d Gate Fuels Inc., 2200 Kraft Drive, Suite 1200B, Blacksburg, VA 24060, USA a r t i c l e i n f o Article history: Received 12 January 2012 Received in revised form 26 March 2012 Accepted 4 April 2012 Keywords: Deep oxidation Enzymatic fuel cell Glucose biobattery Thermoenzyme

440

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Ethylene Oxide for Soil Sterilization  

Science Journals Connector (OSTI)

... , this method may be time-consuming, and in view of the physical properties of ethylene oxide (solubility in water and boiling point 12-5 C.) it was considered ... consists of making up an aqueous solution to supply 2 or 4 c.c. of ethylene oxide in a given amount of water, using pre-chilled glassware and water. The ...

R. E. ROSE; R. W. BAILEY

1952-04-26T23:59:59.000Z

442

Temperature dependence of a high- T c single-flux-quantum logic gate up to 50 K  

Science Journals Connector (OSTI)

Basic characteristics of a simple single-flux-quantum (SFQ) logic gate using high- T c material and Josephson junction ( NdBa 2 Cu 3 O 7?? and focused ion beamjunction) have been investigated. The logic gate consists of an rf-superconducting quantum interference device (rf-SQUID) and a dc-SQUID. In the logic gate elementary SFQ logic operations such as generating SFQ (dc/SFQ) and providing simultaneous readout (SFQ/dc) have been confirmed up to 50 K. The temperature dependencies of the output voltage level and the critical current-normal resistance (I c R n ) product were compared and the decreasing tendency of the output voltage level for increasing temperature was found to be more rapid than that of the I c R n product.

Kazuo Saitoh; Tadashi Utagawa; Youichi Enomoto

1998-01-01T23:59:59.000Z

443

Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors  

SciTech Connect (OSTI)

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

2011-12-23T23:59:59.000Z

444

Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers (Prop 2003-054)  

SciTech Connect (OSTI)

Two types of aluminum nitride (AlN) samples were oxidized in flowing oxygen between 900 C and 1150 C for up to 6 h - highly (0001) textured polycrystalline AlN wafers and low defect density AlN single crystals. The N-face consistently oxidized at a faster rate than the Al-face. At 900 C and 1000 C after 6 h, the oxide was 15% thicker on the N-face than on the Al-face of polycrystalline AlN. At 1100 C and 1150 C, the oxide was only 5% thicker on the N-face, as the rate-limiting step changed from kinetically-controlled to diffusion-controlled with the oxide thickness. A linear parabolic model was established for the thermal oxidation of polycrystalline AlN on both the Al- and N-face. Transmission electron microscopy (TEM) confirmed the formation of a thicker crystalline oxide film on the N-face than on the Al-face, and established the crystallographic relationship between the oxide film and substrate. The oxidation of high-quality AlN single crystals resulted in a more uniform colored oxide layer compared to polycrystalline AlN. The aluminum oxide layer was crystalline with a rough AlN/oxide interface. The orientation relationship between AlN and Al{sub 2}O{sub 3} was (0001) AlN//(10{bar 1}0) Al{sub 2}O{sub 3} and (1{bar 1}00) AlN//(01{bar 1}2) Al{sub 2}O{sub 3}.

Speakman, Scott A [ORNL; Gu, Z [Kansas State University; Edgar, J H [Kansas State University; Blom, Douglas Allen [ORNL; Perrin, J [Kansas State University; Chaudhuri, J [Kansas State University

2006-10-01T23:59:59.000Z

445

Ultra Supercritical Steamside Oxidation  

SciTech Connect (OSTI)

Ultra supercritical (USC) power plants offer the promise of higher efficiencies and lower emissions, which are goals of the U.S. Department of Energy's Advanced Power Systems Initiatives. Most current coal power plants in the U.S. operate at a maximum steam temperature of 538 C. However, new supercritical plants worldwide are being brought into service with steam temperatures of up to 620 C. Current Advanced Power Systems goals include coal generation at 60% efficiency, which require steam temperatures of up to 760 C. This research examines the steamside oxidation of advanced alloys for use in USC systems, with emphasis placed on alloys for high- and intermediate-pressure turbine sections. Initial results of this research are presented.

Holcomb, Gordon R.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Ziomek-Moroz, Malgorzata

2005-01-01T23:59:59.000Z

446

Nanostructured Solid Oxide Fuel Cell Electrodes  

E-Print Network [OSTI]

post-Doping of Solid Oxide Fuel Cell Cathodes,? P.h.D.and V. I. Birss, in Solid Oxide Fuel Cells (SOFC IX), S. C.Nanostructured Solid Oxide Fuel Cell Electrodes By Tal Zvi

Sholklapper, Tal Zvi

2007-01-01T23:59:59.000Z

447

Detection of oxidation in human serum lipoproteins  

E-Print Network [OSTI]

A method for the oxidation of lipoproteins in vitro was developed using the free radical initiator, 2,2?-azobis-(2-amidinopropane) dihydrochloride (AAPH). Following in vitro oxidation, the susceptibility to oxidation of the serum samples...

Myers, Christine Lee

2006-04-12T23:59:59.000Z

448

Structure of a Blm10 Complex Reveals Common Mechanisms for Proteasome Binding and Gate Opening  

SciTech Connect (OSTI)

The proteasome is an abundant protease that is critically important for numerous cellular pathways. Proteasomes are activated in vitro by three known classes of proteins/complexes, including Blm10/PA200. Here, we report a 3.4 {angstrom} resolution crystal structure of a proteasome-Blm10 complex, which reveals that Blm10 surrounds the proteasome entry pore in the 1.2 MDa complex to form a largely closed dome that is expected to restrict access of potential substrates. This architecture and the observation that Blm10 induces a disordered proteasome gate structure challenge the assumption that Blm10 functions as an activator of proteolysis in vivo. The Blm10 C terminus binds in the same manner as seen for 11S activators and inferred for 19S/PAN activators and indicates a unified model for gate opening. We also demonstrate that Blm10 acts to maintain mitochondrial function. Consistent with the structural data, the C-terminal residues of Blm10 are needed for this activity.

Sadre-Bazzaz, K.; Robinson, H.; Whitby, F. G.; Formosa, T.; Hill, C. P.

2010-03-12T23:59:59.000Z

449

Image enhancement using a range gated MCPII video system with a 180-ps FWHM shutter  

SciTech Connect (OSTI)

The video image of a target submerged in a scattering medium was improved through the use of range gating techniques. The target, an Air Force resolution chart, was submerged in 18 in. of a colloidal suspension of tincture green soap in water. The target was illuminated with pulsed light from a Raman shifted, frequency-doubled, ND:YAG laser having a wavelength of 559 mm and a width of 20 ps FWHM. The laser light reflected by the target along with the light scattered by the soap, was imaged onto a microchannel-plate image intensifier (MCPII). The output from the MCPII was then recorded with a RS-170 video camera and a video digitizer. The MCPII was gated on with a pulse synchronously timed to the laser pulse. The relative timing between the reflected laser pulse and the shuttering of the MCPII determined the distance to the imaged region. The resolution of the image was influenced by the MCPII`s shutter time. A comparison was made between the resolution of images obtained with 6 ns, 500 ps and 180 ps FWHM (8 ns, 750 ps and 250 ps off-to-off) shutter times. it was found that the image resolution was enhanced by using the faster shutter since the longer exposures allowed light scattered by the water to be recorded too. The presence of scattered light in the image increased the noise, thereby reducing the contrast and the resolution.

Thomas, M.C. [Special Technologies Laboratory, Santa Barbara, CA (United States); Yates, G.J. [Los Alamos National Lab., NM (United States); Zadgarino, P. [Sharpenit, Ellwood, CA (United States)

1995-09-01T23:59:59.000Z

450

The elusive hair cell gating spring, a potential role for the lipid membrane  

Science Journals Connector (OSTI)

Deflection of auditory hair cell hair bundle results in a nonlinear (i.e. non Hookean) force-displacement relationships whose molecular mechanism remains elusive. A gating spring model posits that mechanosensitive channels are in series with a spring such that channel opening puts the activation gate in series with the spring thus reducing spring extension until further stimulation is provided. Here we present a theoretical analysis of whether the lipid membrane might be the source of nonlinearity. A hair bundle kinematic model is coupled with a lipid membrane model that includes a diffusible compartment into which the tip-link embeds and a minimally diffusive reservoir pool. Using physiological parameters this model was capable of reproducing nonlinear force-displacement plots including a negative stiffness component but required a standing tip-link tension. In addition this model suggests the mechanotransducer channel is most sensitive to curvature forces that are located within 2 nm of the tip-link. [Work supported in part by Grant Nos. R01-DC07910 and R01-DC03896 from the NIDCD of NIH and by The Timoshenko fund from Mechanical Engineering Department at Stanford University].

Charles R. Steele; Sunil Puria

2013-01-01T23:59:59.000Z

451

formatting | OpenEI Community  

Open Energy Info (EERE)

formatting formatting Home Jweers's picture Submitted by Jweers(83) Contributor 7 August, 2013 - 18:23 New Robust References! citation citing developer formatting reference Semantic Mediawiki wiki Check out the new Reference Form. Adding a reference object to OpenEI using this form is the most complete way to cite a reference. After providing the name of your reference, the form will ask for your document type. Rmckeel's picture Submitted by Rmckeel(297) Contributor 25 June, 2013 - 07:39 How to create formatted blocks to hold OpenEI wiki content content formatting user interface wiki The OpenEI wiki frontpage uses "boxes" that help organize content. These boxes are frequently re-used across the site. Syndicate content 429 Throttled (bot load) Error 429 Throttled (bot load)

452

Tunneling oxide engineering by ion implantation of nitrogen for 3D vertical silicon pillar SONOS flash memory  

Science Journals Connector (OSTI)

The electrical characteristics of silicon-oxide-nitride-oxide-silicon (SONOS) flash memory with a 3D vertical silicon pillar structure were studied. As an alternative method for the formation of the tunneling oxide, nitrogen ion implantation was applied to thermally grown pure silicon dioxide with a low energy (5keV). The devices show significant improvement in the erase characteristics compared to conventional tunneling oxide. Secondary ion mass spectrometry was used to analyze the nitrogen distribution within tunnel oxide, and the improved erase properties can be attributed to the incorporation of about 4.8% nitrogen (2נ1021atoms/cm3) into the tunnel oxide formed by nitrogen ion implantation.

Jae-Sub Oh; Seong-Dong Yang; Sang-Youl Lee; Young-Su Kim; Min-Ho Kang; Sung-Kyu Lim; Hi-Deok Lee; Ga-Won Lee

2013-01-01T23:59:59.000Z

453

In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development  

E-Print Network [OSTI]

describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment ­ GATE (General Architecture for Text Engineering) ­ aims to advance research in the area

Gaizauskas, Rob

454

In Proceedings of the 8th IEEE International Conference on Tools with Artificial Intelligence, Toulouse, France, 1996. GATE: An Environment to Support Research and Development  

E-Print Network [OSTI]

describe a software environment to support research and development in natural language (NL) engineering, Toulouse, France, 1996. GATE: An Environment to Support Research and Development in Natural Language. This environment -- GATE (General Architecture for Text Engineering) -- aims to advance research in the area

Gaizauskas, Rob

455

New manganese catalyst for light alkane oxidation  

DOE Patents [OSTI]

Aluminophosphates containing manganese in the structural framework are employed for the oxidation of alkanes, for example the vapor phase oxidation of methane to methanol.

Durante, Vincent A. (West Chester, PA); Lyons, James E. (Wallingford, PA); Walker, Darrell W. (Visalia, CA); Marcus, Bonita K. (Radnor, PA)

1994-01-01T23:59:59.000Z

456

Modulation of conductance and superconductivity by top-gating in LaAlO{sub 3}/SrTiO{sub 3} 2-dimensional electron systems  

SciTech Connect (OSTI)

We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO{sub 3}/SrTiO{sub 3} interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO{sub 3} films grown by pulsed laser deposition induce the 2DEGs at the interface to the SrTiO{sub 3} substrate and simultaneously act as the gate dielectric. The structured top-gates enable a local tuning and complete on/off switching of the interface (super-)conductivity, while maintaining the usual, intrinsic characteristics for these LaAlO{sub 3}/SrTiO{sub 3} interfaces when no gate voltage is applied.

Eerkes, P. D.; Wiel, W. G. van der; Hilgenkamp, H. [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)] [MESA Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede (Netherlands)

2013-11-11T23:59:59.000Z

457

Composition of a thermal plasma formed from PTFE with copper in non-oxidant atmosphere.  

E-Print Network [OSTI]

1 Composition of a thermal plasma formed from PTFE with copper in non-oxidant atmosphere. Part I the minimization of given thermodynamic functions or mass action laws even with plasmas out of thermal equilibrium- . Key Words: circuit breakers, SF6, PTFE, carbon formation, copper, dielectric gas, plasma composition

Paris-Sud XI, Université de

458

Assessment of soil nitrogen oxides emissions and implementation in LOTOS-EUROS  

E-Print Network [OSTI]

the formation and transport of nitrogen dioxide, ozone, particulate matter and other species throughout EuropeAssessment of soil nitrogen oxides emissions and implementation in LOTOS-EUROS Date 18 March 2013, climate and nitrogen availability. Nitrogen availability is in turn determined by N-deposition from

Haak, Hein

459

High density adsorbed oxygen on Rh,,111... and enhanced routes to metallic oxidation using atomic oxygen  

E-Print Network [OSTI]

High density adsorbed oxygen on Rh,,111... and enhanced routes to metallic oxidation using atomic oxygen K. D. Gibson, Mark Viste, Errol C. Sanchez, and S. J. Sibener The James Franck Institute; accepted 30 November 1998 Exposure of Rh 111 to atomic oxygen leads to the facile formation of a full

Sibener, Steven

460

TEM studies of Ge nanocrystal formation in PECVD grown  

Science Journals Connector (OSTI)

We investigate the effect of annealing on the Ge nanocrystal formation in multilayered germanosilicateoxide films grown on Si substrates by plasma enhanced chemical vapour deposition (PECVD). The multilayered samples were annealed at temperatures ranging from 750 to 900?C for 5min under nitrogen atmosphere. The onset of formation of Ge nanocrystals, at 750?C, can be observed via high resolution TEM micrographs. The diameters of Ge nanocrystals were observed to be between 5 and 14nm. As the annealing temperature is raised to 850?C, a second layer of Ge nanocrystals forms next to the original precipitation band, positioning itself closer to the substrate SiO2 interface. High resolution cross section TEM images, electron diffraction and electron energy-loss spectroscopy as well as energy-dispersive x-ray analysis (EDAX) data all indicate that Ge nanocrystals are present in each layer.

S A?an; A Dana; A Aydinli

2006-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Spectroscopic Studies of O-Vacancy Defects in Transition Metal Oxides  

SciTech Connect (OSTI)

Dielectrics comprised of nano-crystalline HfO{sub 2} in gate stacks with thin SiO{sub 2}/SiON interfacial transition regions display significant asymmetries with respect to trapping of Si substrate injected holes and electrons. Based on spectroscopic studies, and guided by ab initio theory, electron and hole traps in HfO{sub 2} and other transition metal elemental oxides are assigned to O-atom divacancies clustered at internal grain boundaries of nano-crystalline films. Engineering solutions in which grain boundary defects are suppressed include: (i) ultra-thin, <2 nm, HfO{sub 2} fims, (ii) chemically phase separated high HfO2 content silicate films, and (iii) non-crystalline Zr/Hf Si oxynitride films.

Lucovsky, G.; Luning, J.; Fleming, L.B.; Ulrich, M.D.; Rowe, J.E.; Seo, H.; Lee, S.; Lysaght, P.; Bersuker, G.

2009-06-03T23:59:59.000Z

462

Variation-aware placement tool for Field Programmable Gate Array devices  

E-Print Network [OSTI]

Introduction: As semiconductor technologies become more advanced, process variations within microelectronic devices, including variations in channel length or in oxide thickness, play a much more important role with regards ...

Perez, Christopher E

2007-01-01T23:59:59.000Z

463

Structural characterization of terrestrial microbial Mn oxides from Pinal Creek, AZ  

SciTech Connect (OSTI)

The microbial catalysis of Mn(II) oxidation is believed to be a dominant source of abundant sorption- and redox-active Mn oxides in marine, freshwater, and subsurface aquatic environments. In spite of their importance, environmental oxides of known biogenic origin have generally not been characterized in detail from a structural perspective. Hyporheic zone Mn oxide grain coatings at Pinal Creek, Arizona, a metals-contaminated stream, have been identified as being dominantly microbial in origin and are well studied from bulk chemistry and contaminant hydrology perspectives. This site thus presents an excellent opportunity to study the structures of terrestrial microbial Mn oxides in detail. XRD and EXAFS measurements performed in this study indicate that the hydrated Pinal Creek Mn oxide grain coatings are layer-type Mn oxides with dominantly hexagonal or pseudo-hexagonal layer symmetry. XRD and TEM measurements suggest the oxides to be nanoparticulate plates with average dimensions on the order of 11 nm thick x 35 nm diameter, but with individual particles exhibiting thickness as small as a single layer and sheets as wide as 500 nm. The hydrated oxides exhibit a 10-A basal-plane spacing and turbostratic disorder. EXAFS analyses suggest the oxides contain layer Mn(IV) site vacancy defects, and layer Mn(III) is inferred to be present, as deduced from Jahn-Teller distortion of the local structure. The physical geometry and structural details of the coatings suggest formation within microbial biofilms. The biogenic Mnoxides are stable with respect to transformation into thermodynamically more stable phases over a time scale of at least 5 months. The nanoparticulate layered structural motif, also observed in pure culture laboratory studies, appears to be characteristic of biogenic Mn oxides and may explain the common occurrence of this mineral habit in soils and sediments.

Bargar, John; Fuller, Christopher; Marcus, Matthew A.; Brearley, Adrian J.; Perez De la Rosa, M.; Webb, Samuel M.; Caldwell, Wendel A.

2008-03-19T23:59:59.000Z

464

Structure, adhesion, and stability of metal/oxide and oxide/oxide interfaces  

SciTech Connect (OSTI)

Studies of structural, electronic, and chemical properties of metal/oxide and oxide/oxide interfaces were performed on well-defined interfaces that created by depositing ultra-thin potassium and aluminum films and their oxides onto single crystal TiO[sub 2] and NiO surfaces. Work focused on determining the structure, growth mechanisms, and morphologies of metal and oxide films as they are deposited an single crystal oxide surfaces using RHEED and atomic force microscopy probing electronic structure, bonding and chemical interactions at the interfaces using x-ray and uv photoelectron spectroscopies (XPS, UPS) and Auger electron spectroscopy (AES), and understanding factors affecting stability and reactivity of the interface regions including the role of defects and impurities. Results indicate that kinetic effects have an important influence on interface structure and composition, and they also show that defects in the oxide substrate induce new electronic states at the interface which play a major role in cation-anion bonding and interface interactions. The results establish a link between electronic and chemical bonding properties and the interface structure and morphology, which is required to successfully manipulate the interfacial properties of advanced ceramic materials.

Lad, R.J.

1992-11-01T23:59:59.000Z

465

An embryo of protocell membrane: The capsule of graphene oxide  

E-Print Network [OSTI]

Many signs indicate that the graphene could widely occur on the early Earth. Here, we report a new theory that graphene might be an embryo of protocell membrane, and found several evidences. Firstly, the graphene oxide and phospholipid-graphene oxide composite would curl into capsules in strongly acidic saturated solution of Pb(NO3)2 at low temperature, providing a protective space for biochemical reactions. Secondly, L-animi acids exhibit higher reactivity than D-animi acids for graphene oxides in favor of the formation of left-handed proteins. Thirdly, monolayer graphene with nanopores prepared by unfocused 84Kr25+ has high selectivity for permeation of the monovalent metal ions (Rb+ > K+ > Cs+ > Na+ > Li+), but does not allow Cl- through, which could be attributed to the ion exchange of oxygen-containing groups on the rim of nanopores. It is similar to K+ channels, which would cause efflux of some ions from capsule of graphene oxides with the decrease of pH in the primitive ocean, creating a suitable inner...

Li, Zhan; Tian, Longlong; Bai, Jing; Zhao, Yang; Zhang, Xin; Cao, Shiwei; Qi, Wei; Qiu, Hongdeng; Wang, Suomin; Shi, Keliang; Xu, Youwen; Mingliang, Zhang; Liu, Bo; Yao, Huijun; Liu, Jie; Wu, Wangsuo; Wang, Xiaoli

2014-01-01T23:59:59.000Z

466

An embryo of protocell membrane: The capsule of graphene oxide  

E-Print Network [OSTI]

Many signs indicate that the graphene could widely occur on the early Earth. Here, we report a new theory that graphene might be an embryo of protocell membrane, and found several evidences. Firstly, the graphene oxide and phospholipid-graphene oxide composite would curl into capsules in strongly acidic saturated solution of Pb(NO3)2 at low temperature, providing a protective space for biochemical reactions. Secondly, L-animi acids exhibit higher reactivity than D-animi acids for graphene oxides in favor of the formation of left-handed proteins. Thirdly, monolayer graphene with nanopores prepared by unfocused 84Kr25+ has high selectivity for permeation of the monovalent metal ions (Rb+ > K+ > Cs+ > Na+ > Li+), but does not allow Cl- through, which could be attributed to the ion exchange of oxygen-containing groups on the rim of nanopores. It is similar to K+ channels, which would cause efflux of some ions from capsule of graphene oxides with the decrease of pH in the primitive ocean, creating a suitable inner condition for the origin of life. Consequently, the strongly acidic, high salinity and strong radiation as well as temperature changes in the early Earth, regarded as negative factors, would be indispensable for the origin of protocell. In short, graphene bred life, but digested gradually by the evolution.

Zhan Li; Chunmei Wang; Longlong Tian; Jing Bai; Yang Zhao; Xin Zhang; Shiwei Cao; Wei Qi; Hongdeng Qiu; Suomin Wang; Keliang Shi; Youwen Xu; Zhang Mingliang; Bo Liu; Huijun Yao; Jie Liu; Wangsuo Wu; Xiaoli Wang

2014-11-07T23:59:59.000Z

467

Assesment of Riverbed Change Due to the Operation of a Series of Gates in a Natural River  

E-Print Network [OSTI]

the Mesh .............................................................. 87 Figure 63 Study Area in 2-D Model ......................................................................... 88 viii Figure 64 Comparison of Cross Sections between 1-D... Characteristics from Estuary to Bakje Weir ........................... 123 Figure 88 Temporal Comparison of Hydraulic Characteristics ............................... 125 Figure 89 Mass Change from Sejong Weir to Daechung Dam by Gate Operation . 129...

Kim, Zooho

2013-03-13T23:59:59.000Z

468

International Conference on Internet Computing. Las Vegas, Nevada, p. 620 626. 23 26 June MONSTERS AT THE GATE  

E-Print Network [OSTI]

, (2) Web agents are searching for a wide variety of information, with 60% of the terms used being: terms exactly as entered by the given user. Data Analysis With these three fields, we located initial June 2003. MONSTERS AT THE GATE: WHEN SOFTBOTS VISIT WEB SEARCH ENGINES Bernard J. Jansen and Amanda S

Jansen, James

469

Drug Release from Self-Assembled Inorganic?Organic Hybrid Gels and Gated Porosity Detected by Positron Annihilation Lifetime Spectroscopy  

Science Journals Connector (OSTI)

Drug Release from Self-Assembled Inorganic?Organic Hybrid Gels and Gated Porosity Detected by Positron Annihilation Lifetime Spectroscopy ... Institute of Physical Chemistry, University of Mnster, Corrensstrasse 36, 48149 Mnster, Germany, CSIRO Manufacturing and Infrastructure Technology, Victoria, Australia, and School of Chemistry, Monash University, Clayton Victoria, Australia ...

Ansgar Bgershausen; Steven J. Pas; Anita J. Hill; Hubert Koller

2006-01-06T23:59:59.000Z

470

Voltage-and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically  

E-Print Network [OSTI]

Voltage- and calcium-dependent gating of TMEM16A/Ano1 chloride channels are physically coupled by the first intracellular loop Qinghuan Xiaoa , Kuai Yua , Patricia Perez-Cornejob , Yuanyuan Cuia , Jorge in the first intracellular loop that is crucial for both Ca2+ and voltage sensing. Deleting 448EAVK

471

Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. McCluskey  

E-Print Network [OSTI]

Test Set Reordering Using the Gate Exhaustive Test Metric Kyoung Youn Cho and Edward J. Mc kycho@crc.stanford.edu Abstract When a test set size is larger than desired, some patterns must be dropped. This paper presents a systematic method to reduce test set size; the method reorders a test set

Stanford University

472

IEEE ELECTRON DEVICE LETTERS, VOL. 29, NO. 2, FEBRUARY 2008 183 Externally Assembled Gate-All-Around Carbon  

E-Print Network [OSTI]

-All-Around Carbon Nanotube Field-Effect Transistor Zhihong Chen, Member, IEEE, Damon Farmer, Sheng Xu, Roy Gordon USA (e-mail: zchen@us.ibm.com; avouris@ us.ibm.com). D. Farmer is with the School of Engineering demonstrate a gate-all-around single- wall carbon nanotube field-effect transistor. This is the first suc

473

210 nature neuroscience volume 5 no 3 march 2002 Calcium entry into cells through voltage-gated Ca2+ channels  

E-Print Network [OSTI]

voltage-gated Ca2+ channels initiates a wide range of cellular processes including protein phosphorylation, gene expression and neurotransmitter release1. Neuronal Ca2+ channels consist of a pore-forming 1 by neurotransmitters inhibits Cav2.1 and Cav2.2 channels, which mediate P/Q-type and N- type Ca2+ currents

Palczewski, Krzysztof

474

High-speed and bi-stable electrolysis-bubble actuated planar micro gate valves are demonstrated in this paper.  

E-Print Network [OSTI]

SUMMARY High-speed and bi-stable electrolysis-bubble actuated planar micro gate valves are demonstrated in this paper. The speed of previous low power planar microvalves was limited by the bubble collapse process. In addition bi-stability was unreliable. In this work, surface tension is used

Liepmann, Dorian

475

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability  

E-Print Network [OSTI]

Role of hydrogen in Ge/HfO2/Al gate stacks subjected to negative bias temperature instability N 2007; published online 17 January 2008 This work investigates the role of hydrogen and nitrogen in a Ge. Virtually unchanged interface state density as a function of NBTI indicates no atomic hydrogen release from

Misra, Durgamadhab "Durga"

476

Treating tar sands formations with karsted zones  

DOE Patents [OSTI]

Methods for treating a tar sands formation are described herein. The tar sands formation may have one or more karsted zones. Methods may include providing heat from one or more heaters to one or more karsted zones of the tar sands formation to mobilize fluids in the formation. At least some of the mobilized fluids may be produced from the formation.

Vinegar, Harold J. (Bellaire, TX); Karanikas, John Michael (Houston, TX)

2010-03-09T23:59:59.000Z

477

Single crystal oxide and oxide/oxide eutectic fibres for high temperature composites  

Science Journals Connector (OSTI)

The utilisation of fibre-reinforced metal, intermetallic and ceramic matrix composites (CMCs) in gas turbine engines offers the potential of improved fuel efficiency, higher operating temperature and greater thrust to weight ratio. The development of ceramic fibres with high strength, excellent strength retention at elevated temperatures and good creep resistance is essential to the successful implementation of composites in various high temperature components. Several single crystal oxide and oxide/oxide eutectic fibres have been developed to meet the demanding performance requirements. Recent progress made on developing these fibers will be discussed.

J.-M. Yang

2001-01-01T23:59:59.000Z

478

Coke formation during pyrolysis of 1,2-dichloroethane  

SciTech Connect (OSTI)

Most processes involving hydrocarbons or carbon oxides at high temperatures suffer from the disadvantage of coke formation. The formation of coke deposits during pyrolysis of hydrocarbons or chlorinated hydrocarbons is of significant practical importance. Examples of such processes are the steam cracking of alkanes to produce olefins and the thermal decomposition of 1,2-dichloroethane (EDC) for the production of vinyl chloride monomer (VCM). Even id the rate of coke production is low, the cumulative nature of the solid product will result in reactor fouling. The present work deals with the thermal decomposition of EDC. Coke formation has been studied on metal surfaces in a quartz tubular reactor. The rate of coke deposition was measures on metal foils hanging from one arm of a microbalance. A complete analysis of the product gas was accomplished using on-line gas chromatography. The results show that coke deposition during thermal decomposition of EDC depends on the composition of the feed as well as on the nature of the surface of the metal foil. Small amounts of other components (contamination with other chlorinated hydrocarbons as an example) may have a large influence on the rate of coke formation. The results are discussed in terms of surface composition/morphology of the metal foil and the free radical mechanism for thermal decomposition of FDC.

Holmen, A. [Norwegian Institute of Technology, Trondheim (Norway); Lindvag, O.A. [SINTEF Applied Chemistry, Trondheim (Norway)

1995-12-31T23:59:59.000Z

479

The catalytic oxidation of propane  

E-Print Network [OSTI]

THE CATALYTIC OXIDATION OP PROPANE A Thesis By Charles Frederick Sandersont * * June 1949 Approval as to style and content recommended: Head of the Department of Chemical Engineering THE CATALYTICi OXIDATTON OF PROPANE A Thesis By Charles... Frederick ;Sandersonit * June 1949 THE CATALYTIC OXIDATION OP PROPANE A Thesis Submitted to the Faculty of the Agricultural and Mechanical College of Texas in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Major...

Sanderson, Charles Frederick

2013-10-04T23:59:59.000Z

480

Investigation of abnormal negative threshold voltage shift under positive bias stress in input/output n-channel metal-oxide-semiconductor field-effect transistors with TiN/HfO{sub 2} structure using fast I-V measurement  

SciTech Connect (OSTI)

This letter investigates abnormal negative threshold voltage shifts under positive bias stress in input/output (I/O) TiN/HfO{sub 2} n-channel metal-oxide-semiconductor field-effect transistors using fast I-V measurement. This phenomenon is attributed to a reversible charge/discharge effect in pre-existing bulk traps. Moreover, in standard performance devices, threshold-voltage (V{sub t}) shifts positively during fast I-V double sweep measurement. However, in I/O devices, V{sub t} shifts negatively since electrons escape from bulk traps to metal gate rather than channel electrons injecting to bulk traps. Consequently, decreasing pre-existing bulk traps in I/O devices, which can be achieved by adopting Hf{sub x}Zr{sub 1?x}O{sub 2} as gate oxide, can reduce the charge/discharge effect.

Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw; Lu, Ying-Hsin; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

2014-03-17T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Precipitation Processes During ARM (1997), TOGA COARE (1992), GATE (1974), SCSMEX (1998), and KWAJEX (1999): Con...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Precipitation Processes During ARM (1997), TOGA Precipitation Processes During ARM (1997), TOGA COARE (1992), GATE (1974), SCSMEX (1998), and KWAJEX (1999): Consistent 2D and 3D Cloud Resolving Model Simulations W.-K Tao, C.-L. Shie, J. Simpson, D. Starr, D. Johnson, and Y. Sud Mesoscale Atmospheric Process Branch (Code 912) Laboratory for Atmospheres National Aeronautics and Space Administration Goddard Space Flight Center Greenbelt, Maryland Introduction A basic characteristic of cloud-resolving models (CRMs) is that their governing equations are non- hydrostatic since the vertical and horizontal scales of convection are similar. Such models are also necessary in order to allow gravity waves, such as those triggered by clouds, to be resolved explicitly. CRMs use sophisticated and physically realistic parameterizations of cloud microphysical processes

482

Difference of operation mechanisms in SWNTs network FETs studied via scanning gate microscopy  

SciTech Connect (OSTI)

Field effect transistors (FETs) whose channel is composed of a network of single wall carbon nanotubes (SWNTs) have been studied to investigate the mechanism of the device operation via scanning gate microscopy (SGM) at room temperature. We observed different SGM response in networks of SWNTs either synthesized by CoMoCAT process or semiconducting enriched by density gradient ultracentrifuge process. In the former case, SGM response was observed at specific inter-tube junctions suggesting a Schottky junction formed with semiconducting and metallic SWNTs in the network. In contrast, multiple concentric rings in the SGM response are observed within the tubes in a network of the latter SWNTs suggesting a possibility of quantum mechanical transport at room-temperature. Different type of SGM responses are confirmed in the two kinds of SWNTs networks, nevertheless such active positions would likely have an important role in the FET operation mechanism in each network.

Wei, Xiaojun; Matsunaga, Masahiro; Yahagi, Tatsurou; Maeda, Kenji; Ochiai, Yuichi; Aoki, Nobuyuki [Graduate School of Advanced Integration Science, Chiba University, Chiba 263-8522 (Japan); Bird, Jonathan P. [Department of Electrical Engineering, University at Buffalo, the State University of New York, Buffalo, NY 14260-1920 (United States); Ishibashi, Koji [Advanced Device Laboratory, RIKEN, Wako, Saitama 351-0198 (Japan)

2013-12-04T23:59:59.000Z

483

The accelerated site technology deployment program presents the segmented gate system  

SciTech Connect (OSTI)

The Department of Energy (DOE) is working to accelerate the acceptance and application of innovative technologies that improve the way the nation manages its environmental remediation problems. The DOE Office of Science and Technology established the Accelerated Site Technology Deployment Program (ASTD) to help accelerate the acceptance and implementation of new and innovative soil and ground water remediation technologies. Coordinated by the Department of Energy's Idaho Office, the ASTD Program reduces many of the classic barriers to the deployment of new technologies by involving government, industry, and regulatory agencies in the assessment, implementation, and validation of innovative technologies. The paper uses the example of the Segmented Gate System (SGS) to illustrate how the ASTD program works. The SGS was used to cost effectively separate clean and contaminated soil for four different radionuclides: plutonium, uranium, thorium, and cesium. Based on those results, it has been proposed to use the SGS at seven other DOE sites across the country.

PATTESON,RAYMOND; MAYNOR,DOUG; CALLAN,CONNIE

2000-02-24T23:59:59.000Z

484

A New Gated X-Ray Detector for the Orion Laser Facility  

SciTech Connect (OSTI)

Gated X-Ray Detectors (GXD) are considered the work-horse target diagnostic of the laser based inertial confinement fusion (ICF) program. Recently, Los Alamos National Laboratory (LANL) has constructed three new GXDs for the Orion laser facility at the Atomic Weapons Establishment (AWE) in the United Kingdom. What sets these three new instruments apart from the what has previously been constructed for the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) is: improvements in detector head microwave transmission lines, solid state embedded hard drive and updated control software, and lighter air box design and other incremental mechanical improvements. In this paper we will present the latest GXD design enhancements and sample calibration data taken on the Trident laser facility at Los Alamos National Laboratory using the newly constructed instruments.

Clark, David D. [Los Alamos National Laboratory; Aragonez, Robert J. [Los Alamos National Laboratory; Archuleta, Thomas N. [Los Alamos National Laboratory; Fatherley, Valerie E. [Los Alamos National Laboratory; Hsu, Albert H. [Los Alamos National Laboratory; Jorgenson, H. J. [Los Alamos National Laboratory; Mares, Danielle [Los Alamos National Laboratory; Oertel, John A. [Los Alamos National Laboratory; Oades, Kevin [Atomic Weapons Establishment; Kemshall, Paul [Atomic Weapons Establishment; Thomas, Philip [Atomic Weapons Establishment; Young, Trevor [Atomic Weapons Establishment; Pederson, Neal [VI Control Systems

2012-08-08T23:59:59.000Z

485

Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics  

SciTech Connect (OSTI)

Graphene field-effect transistors are integrated with solution-processed multilayer hybrid organic-inorganic self-assembled nanodielectrics (SANDs). The resulting devices exhibit low-operating voltage (2?V), negligible hysteresis, current saturation with intrinsic gain >1.0 in vacuum (pressure?gate dielectrics. Statistical analysis of the field-effect mobility and residual carrier concentration demonstrate high spatial uniformity of the dielectric interfacial properties and graphene transistor characteristics over full 3 in. wafers. This work thus establishes SANDs as an effective platform for large-area, high-performance graphene electronics.

Sangwan, Vinod K.; Jariwala, Deep; McMorrow, Julian J.; He, Jianting; Lauhon, Lincoln J. [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Everaerts, Ken [Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Grayson, Matthew [Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208 (United States); Marks, Tobin J., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu; Hersam, Mark C., E-mail: t-marks@northwestern.edu, E-mail: m-hersam@northwestern.edu [Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208 (United States); Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

2014-02-24T23:59:59.000Z

486

Calibration of a gated flat field spectrometer as a function of x-ray intensity  

SciTech Connect (OSTI)

We present an experimental determination of the response of a gated flat-field spectrometer at the Shenguang-II laser facility. X-rays were emitted from a target that was heated by laser beams and then were divided into different intensities with a step aluminum filter and collected by a spectrometer. The transmission of the filter was calibrated using the Beijing Synchrotron Radiation Facility. The response characteristics of the spectrometer were determined by comparing the counts recorded by the spectrometer with the relative intensities of the x-rays transmitted through the step aluminum filter. The response characteristics were used to correct the transmission from two shots of an opacity experiment using the same samples. The transmissions from the two shots are consistent with corrections, but discrepant without corrections.

Xiong, Gang; Yang, Guohong; Li, Hang; Zhang, Jiyan, E-mail: zhangjiyanzjy@sina.com; Zhao, Yang; Hu, Zhimin; Wei, Minxi; Qing, Bo; Yang, Jiamin; Liu, Shenye; Jiang, Shaoen [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)] [Research Center of Laser Fusion, China Academy of Engineering Physics, P. O. Box 919-986, Mianyang 621900 (China)

2014-04-15T23:59:59.000Z

487

Fabrication of superconducting metal-oxide textiles by heating impregnated polymeric material in a weakly oxidizing atmosphere  

SciTech Connect (OSTI)

A process is described for producing crystalline fibers, textiles or shapes comprised of YBa[sub 2]Cu[sub 3]O[sub 7[minus]x] where x varies from about 0 to about 0.4, said process comprising: (a) impregnating a preformed organic polymeric material with three metal compounds to provide metal elements in said material in substantially the atomic ratio occurring in said YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]; (b) heating said impregnated material in a weakly oxidizing atmosphere containing from about 0.05% to about 2% oxygen by volume to a temperature sufficiently high to at least partially pyrolize and oxidize said organic material and at least partially oxidize said metal compounds substantially without ignition of said organic material and without formation of a molten phase or reaching a decomposition temperature of said YBa[sub 2]Cu[sub 3]O[sub 7[minus]x]; and (c) cooling the resulting material in at least a moderately oxidizing atmosphere to room temperature so as to obtain said fibers, textiles or shapes.

Van den Sype, J.S.

1993-07-13T23:59:59.000Z

488

?-Conotoxin KIIIA Derivatives with Divergent Affinities versus Efficacies in Blocking Voltage-Gated Sodium Channels  

Science Journals Connector (OSTI)

Because of their facile chemical synthesis, KIIIA analogues that had as a core structure the disulfide-depleted KIIIA[C1A,C2U,C9A,C15U] (where U is selenocysteine) or ddKIIIA were used. ... Abbreviations: dap, diaminoproprionate; ddKIIIA, disulfide-depleted ?-conotoxin KIIIA, i.e., KIIIA[C1A,C2U,C9A,C5U], where U is selenocysteine; ddKIIIA[K7X], ddKIIIA with residue X in position 7; ddKIIIANaV, binary complex of ddKIIIA and NaV; ddKIIIA[K7X]NaV, binary complex of ddKIIIA[K7X] and NaV; ddKIIIA[K7X]TTXNaV, ternary complex of ddKIIIA[K7X], TTX, and NaV; GIIIA, ?-conotoxin GIIIA; INa, sodium current; KIIIA, ?-conotoxin KIIIA; KIIIA[K7A], ?-conotoxin KIIIA[K7A]; NaV, ?-subunit of the voltage-gated sodium channel; rINa, residual sodium current; TTX, tetrodotoxin; TTXNaV, binary complex of TTX and NaV; VGSC, voltage-gated sodium channel. ... The long moniker of ddKIIIA[K7X] is KIIIA[C1A,C2U,K7X,C9A,C15U], where residue X at position 7 was either Ala, Asp, Gly, Leu, Lys (i.e., ddKIIIA), Phe, Ser, Thr, Val, or diaminoproprionate (dap). ...

Min-Min Zhang; Tiffany S. Han; Baldomero M. Olivera; Grzegorz Bulaj; Doju Yoshikami

2010-05-11T23:59:59.000Z

489

Liquid phase oxidation of thiophene compounds by tert-butyl hydroperoxide  

SciTech Connect (OSTI)

Oxidative instability problems in both shale and petroleum-derived middle distillate fuels are related to the presence of hydroperoxides. Although a good body of knowledge exists concerning the formation of peroxides in the liquid phase, relatively little is known about the reaction/decomposition pathways when other functional groups are present. One of the significant and undesirable problems is the formation of solid deposits which can plug nozzles and filters and coal heat exchanger surfaces. Deposit formation in fuels is triggered by autoxidation reactions and is closely associated with elemental oxygen and/or hydroperoxide concentration. This paper reports on the reaction between a primary autoxidation product, a hydroperoxide, and sulfur compounds of the type present in petroleum-derived middle distillate fuels. Specifically, we examine the t-butyl hydroperoxide oxidation of thiophene, 2, 5-dimethylthiophene, tetrahydrothiophene and benzothiophene in a deaerated model fuel, tetradecane, at 120{degree}C.

Mushrush, G.W.; Watkins, J.M. Jr.; Hazlett, R.N.; Hardy, D.R.; Eaton, H.G. (Naval Research Laboratory, Washington, DC (USA))

1987-08-01T23:59:59.000Z

490

Electrospun and oxidized cellulose materials for environmental remediation of heavy metals in groundwater  

SciTech Connect (OSTI)

This chapter focuses on the use of modified cellulosic materials in the field of environmental remediation. Two different chemical methods were involved in fabricating oxidized cellulose (OC), which has shown promise as a metal ion chelator in environmental applications. Electrospinning was utilized to introduce a more porous structure into an oxidized cellulose matrix. FTIR and Raman spectroscopy were used to study both the formation of OC and its surface complexation with metal ions. IR and Raman spectroscopic data demonstrate the formation of characteristic carboxylic groups in the structure of the final products and the successful formation of OC-metal complexes. Subsequent field tests at the Field Research Site at Oak Ridge National Laboratory confirmed the value of OC for sorption of both U and Th ions.

Han, Dong [Stony Brook University (SUNY); Halada, Gary P. [Stony Brook University (SUNY); Spalding, Brian Patrick [ORNL; Brooks, Scott C [ORNL

2009-12-01T23:59:59.000Z

491

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Building 137 Building 137 Bldg. 270 CONSTRUCTION IMPACTS PEDESTRIAN AND VEHICLE ACCESS THROUGH SLAC SECURITY GATE 17 ~ May 28-June 28, 2013 The stairs next to the Gate 17 Guard House will be replaced with an ADA compliant ramp; the turnstile and fence at SLAC Gate 17 will be updated with RFID proximity card access hardware. During this construction, access beyond the fence, including the SSRL and LCLS buildings and user facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 Security will continue to check for valid ID badges. 0600-1530 (6 am-3:30 pm) - Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. Security will 1530-1800 (3:30-6:00 pm) - Assuming construction has

492

Redox cycle stability of mixed oxides used for hydrogen generation in the cyclic water gas shift process  

SciTech Connect (OSTI)

Graphical abstract: - Highlights: Fe{sub 2}O{sub 3} modified with CaO, SiO{sub 2} and Al{sub 2}O{sub 3} was studied in cyclic water gas shift reactor. For the first time stability of such oxides were tested for 100 redox cycles. Optimally added oxides significantly improved the activity and the stability of Fe{sub 2}O{sub 3}. Increased stability was attributed to the impediment of neck formation. - Abstract: Repeated cycles of the reduction of Fe{su