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Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


1

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Gate Oxide Formation in Real Time Looking at Transistor Gate Oxide Formation in Real Time Print Wednesday, 25 June 2008 00:00 The oxide gate layer is critical to every transistor,...

2

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

3

Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks  

SciTech Connect (OSTI)

The properties of high-{kappa} metal oxide gate stacks are often determined in the final processing steps following dielectric deposition. We report here results from medium energy ion scattering and x-ray photoelectron spectroscopy studies of oxygen and silicon diffusion and interfacial layer reactions in multilayer gate stacks. Our results show that Ti metallization of HfO{sub 2}/SiO{sub 2}/Si stacks reduces the SiO{sub 2} interlayer and (to a more limited extent) the HfO{sub 2} layer. We find that Si atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for Ti-Si interdiffusion through the high-{kappa} film in the presence of a Ti gate in the crystalline HfO{sub 2} films is also reported. This diffusion is likely to be related to defects in crystalline HfO{sub 2} films, such as grain boundaries. High-resolution transmission electron microscopy and corresponding electron energy loss spectroscopy scans show aggressive Ti-Si intermixing and oxygen diffusion to the outermost Ti layer, given high enough annealing temperature. Thermodynamic calculations show that the driving forces exist for some of the observed diffusion processes.

Goncharova, L. V.; Dalponte, M.; Gustafsson, T.; Celik, O.; Garfunkel, E.; Lysaght, P. S.; Bersuker, G. [Department of Physics and Astronomy, and Laboratory for Surface Modification, Rutgers University, 136 Frelinghuysen Rd., Piscataway, New Jersey 08854 (United States); Department of Chemistry and Chemical Biology, and Laboratory for Surface Modification, Rutgers University, 610 Taylor Rd., Piscataway, New Jersey 08854 (United States); SEMATECH, 2705 Montopolis Dr., Austin, Texas 78741 (United States)

2007-03-15T23:59:59.000Z

4

Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET  

E-Print Network [OSTI]

on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET Characteristics.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

Anlage, Steven

5

Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive Layer Assisted Deposition. Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive...

6

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction  

E-Print Network [OSTI]

Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing-8087 Received 13 April 2005; accepted 6 June 2005; published online 26 July 2005 A silicate reaction between process route to interface elimination, while producing a silicate dielectric with a higher temperature

Garfunkel, Eric

7

In situ oxidation of subsurface formations  

DOE Patents [OSTI]

Methods and systems for treating a hydrocarbon containing formation described herein include providing heat to a first portion of the formation from a plurality of heaters in the first portion, producing produced through one or more production wells in a second portion of the formation, reducing or turning off heat provided to the first portion after a selected time, providing an oxidizing fluid through one or more of the heater wells in the first portion, providing heat to the first portion and the second portion through oxidation of at least some hydrocarbons in the first portion, and producing fluids through at least one of the production wells in the second portion. The produced fluids may include at least some oxidized hydrocarbons produced in the first portion.

Beer, Gary Lee (Houston, TX); Mo, Weijian (Sugar Land, TX); Li, Busheng (Houston, TX); Shen, Chonghui (Calgary, CA)

2011-01-11T23:59:59.000Z

8

Aromatics oxidation and soot formation in flames  

SciTech Connect (OSTI)

This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify and to determine or confirm rate constants for the main benzene oxidation reactions in flames, and to characterize fullerenes and their formation mechanisms and kinetics.

Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T. [Massachusetts Institute of Technology, Cambridge (United States)

1993-12-01T23:59:59.000Z

9

Direct deposition of aluminum oxide gate dielectric on graphene channel using nitrogen plasma treatment  

SciTech Connect (OSTI)

Deposition of high-quality dielectric on a graphene channel is an essential technology to overcome structural constraints for the development of nano-electronic devices. In this study, we investigated a method for directly depositing aluminum oxide (Al{sub 2}O{sub 3}) on a graphene channel through nitrogen plasma treatment. The deposited Al{sub 2}O{sub 3} thin film on graphene demonstrated excellent dielectric properties with negligible charge trapping and de-trapping in the gate insulator. A top-gate-structural graphene transistor was fabricated using Al{sub 2}O{sub 3} as the gate dielectric with nitrogen plasma treatment on graphene channel region, and exhibited p-type transistor characteristics.

Lim, Taekyung; Kim, Dongchool; Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

2013-07-01T23:59:59.000Z

10

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions. |SchoolLooking at

11

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions. |SchoolLooking

12

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions. |SchoolLookingLooking

13

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions.

14

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6,Local CorrelationsConditions.Looking at Transistor

15

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformationPostdocsCenterCentera A B C D ELong TermJefferson

16

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformationPostdocsCenterCentera A B C D ELong TermJeffersonLooking

17

Looking at Transistor Gate Oxide Formation in Real Time  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickrinformationPostdocsCenterCentera A B C D ELong

18

P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide  

E-Print Network [OSTI]

P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide Sputtering Targets M. Schlott, M from indium-oxide tin-oxide (ITO) targets [1]. Unfor- tunately, black growths, or nodules, commonly isostatic pressing partly reduced powder mixtures of 90 wt.% indium-oxide and 10 wt.% tin-oxide [4

19

Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors  

E-Print Network [OSTI]

energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts

Florida, University of

20

Heating subsurface formations by oxidizing fuel on a fuel carrier  

DOE Patents [OSTI]

A method of heating a portion of a subsurface formation includes drawing fuel on a fuel carrier through an opening formed in the formation. Oxidant is supplied to the fuel at one or more locations in the opening. The fuel is combusted with the oxidant to provide heat to the formation.

Costello, Michael; Vinegar, Harold J.

2012-10-02T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

E-Print Network 3.0 - aluminum oxide gate Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

2 Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during ProgramErase Operations Summary: ABSTRACT The control gate...

22

Gate Metal-Induced Diffusion and Interface Reactions in Hf Oxide Films on Si  

SciTech Connect (OSTI)

When metal electrodes are deposited on a high-{kappa} metal-oxide/SiO{sub 2}/Si stack, chemical interactions may occur both at the metal/high-{kappa} and the high-{kappa}/Si interfaces, causing changes in electrical performance. We report here results from medium energy ion scattering (MEIS) and x-ray photoelectron (XPS) studies of oxygen and silicon transport and interfacial layer reactions in multilayer gate stacks. Our results show that Ti deposition on HfO{sub 2}/SiO{sub 2}/Si stacks causes reduction of the SiO{sub 2} interfacial layer and (to a lesser extent) the HfO{sub 2} layer. Silicon atoms initially present in the interfacial SiO{sub 2} layer incorporate into the bottom of the high-{kappa} layer. Some evidence for titanium-silicon interdiffusion through the high-{kappa} film in the presence of a titanium gate in crystalline HfO{sub 2} films is also reported.

Goncharova, Lyudmila V.; Dalponte, Mateus; Celik, Ozgur; Garfunkel, Eric; Gustafsson, Torgny [Departments of Physics and Chemistry, and Laboratory for Surface Modification, Rutgers University, Piscataway, NJ 08854 (United States); Lysaght, Pat S.; Bersuker, Gennadi I. [Sematech, Austin, Texas 78741 (United States)

2007-09-26T23:59:59.000Z

23

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in  

E-Print Network [OSTI]

Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause mechanisms are bias temperature instability (BTI) [1] and hot-carrier injection (HCI) [2], both of which can is compounded by thermal feedback, since active devices located at die hot spots operate at an elevated

Lipasti, Mikko H.

24

Water-induced Formation of Cobalt Oxides Over SupportedCobalt...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Formation of Cobalt Oxides Over Supported CobaltCeria-Zirconia Catalysts under Ethanol-Steam Conditions. Water-induced Formation of Cobalt Oxides Over Supported Cobalt...

25

Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

2001-01-01T23:59:59.000Z

26

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network [OSTI]

nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

Lin, Chen-Han

2012-10-19T23:59:59.000Z

27

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network [OSTI]

of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 Ã?Â? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

Lu, Jiang

2007-04-25T23:59:59.000Z

28

Formation of hydroxylamine on dust grains via ammonia oxidation  

E-Print Network [OSTI]

The quest to detect prebiotic molecules in space, notably amino acids, requires an understanding of the chemistry involving nitrogen atoms. Hydroxylamine (NH$_2$OH) is considered a precursor to the amino acid glycine. Although not yet detected, NH$_2$OH is considered a likely target of detection with ALMA. We report on an experimental investigation of the formation of hydroxylamine on an amorphous silicate surface via the oxidation of ammonia. The experimental data are then fed into a simulation of the formation of NH$_2$OH in dense cloud conditions. On ices at 14 K and with a modest activation energy barrier, NH$_2$OH is found to be formed with an abundance that never falls below a factor 10 with respect to NH$_3$. Suggestions of conditions for future observations are provided.

He, Jiao; Lemaire, Jean-Louis; Garrod, Robin T

2015-01-01T23:59:59.000Z

29

Zirconium-doped tantalum oxide high-k gate dielectric films  

E-Print Network [OSTI]

A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include...

Tewg, Jun-Yen

2005-02-17T23:59:59.000Z

30

On the electrical stress-induced oxide-trapped charges in thin HfO{sub 2}/SiO{sub 2} gate dielectric stack  

SciTech Connect (OSTI)

Oxide charge buildup and its generation kinetics during constant voltage stress in TaN/HfO{sub 2}/SiO{sub 2}/p-Si structures have been experimentally investigated. From the oxide charge relaxation experiments, nature and energy location of the as-fabricated intrinsic hole traps in the gate stack have also been determined. Our measurement results indicate that the dispersive proton transport through the interfacial SiO{sub 2} contributes larger than hole trapping in positive charge buildup in the stack. From the bias temperature stress measurement results in both control oxide and HfO{sub 2}/SiO{sub 2} stacks, we have identified overcoordinated [Si{sub 2}=OH]{sup +} centers as the proton-induced defects located in the interfacial SiO{sub 2} layer of the stack. Finally, an empirical equation is proposed to explain the stress-induced oxide positive charge buildup.

Samanta, Piyas; Zhu Chunxiang; Chan, Mansun [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China); Department of Electrical and Computer Engineering, National University of Singapore, 10 Kent Ridge Crescent, Singapore 119260 (Singapore); Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay Road, Kowloon, Hong Kong (China)

2007-09-10T23:59:59.000Z

31

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect (OSTI)

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

32

Formation of thin walled ceramic solid oxide fuel cells  

DOE Patents [OSTI]

To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

Claar, Terry D. (Tisle, IL); Busch, Donald E. (Hinsdale, IL); Picciolo, John J. (Lockport, IL)

1989-01-01T23:59:59.000Z

33

Porous anodic aluminum oxide scaffolds; formation mechanisms and applications  

E-Print Network [OSTI]

Nanoporous anodic aluminium oxide (AAO) can be created with pores that self-assemble into ordered configurations. Nanostructured metal oxides have proven to be very useful as scaffolds for growth of nanowires and nanotubes ...

Oh, Jihun

2010-01-01T23:59:59.000Z

34

Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films  

SciTech Connect (OSTI)

A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

2013-12-09T23:59:59.000Z

35

Formation of ozone and oxidation of methane in a direct current corona discharge  

E-Print Network [OSTI]

FORMATION OF OZONE AND OXIDATION OF METHANE IN A DIRECT CURRENT CORONA DISCHARGE A Thesis by UMASHANKER TANGIRALA Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE May 1976 Major Subject: Chemical Engineering FORMATION OF OZONE AND OXIDATION OF METHANE IN A DIRECT CURRENT CORONA DISCHARGE A Thesis by UMASHANKER TANGIRALA Approved as to style and content by: (Chairman of Committee) ( ad of Department...

Tangirala, Umashanker

1976-01-01T23:59:59.000Z

36

Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics  

SciTech Connect (OSTI)

We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

2014-02-21T23:59:59.000Z

37

Biofuel cells: Electro-enzymatic oxidation of formate using formate dehydrogenase, NAD{sup +}, diaphorase, benzyl viologen, and graphite  

SciTech Connect (OSTI)

The authors have developed an effective electrochemical method to regenerate nicotinamide adenine dinucleotide (NAD{sup +}) from NADH. Diaphorase (D) was used to oxidize NADH to NAD{sup +} with the concomitant reduction of two equivalents of benzylviologen (BV{sup 2+}) to the mono cation, BV{sup +} to the mono cation, BV{sup +}. The BV{sup +} was then electrochemically oxidized to BV{sup 2+} at a carbon-felt anode: NADH + 2BV{sup 2+} --(D)--> NAD{sup +} + 2BV{sup +} 2BV{sup +}-->(anode)-->2BV{sup 2+}. This system was incorporated into an enzymatic fuel cell that used formate as fuel. Formate dehydrogenase (FDH) was used to oxidize formate to CO{sub 2} with the concomitant 2 e{sup {minus}}, 2H{sup +} reduction of NAD{sup +} to NADH. The NADH was then regenerated using the system described above. The anode of the fuel cell was used to oxidize BV{sup +} to BV{sup 2+}. Blackened Pt gauze as used as the cathode of the fuel cell. The working parameters of the formate/O{sub 2} biofuel cell will be presented including methods to develop this system into the more complex methanol/O{sub 2} biofuel cell.

Palmmore, G.T.R.; Bertschy, H.; Bergens, S.H.; Whitesides, G.M. [Harvard Univ., Cambridge, MA (United States)

1993-12-31T23:59:59.000Z

38

Pulsed oxidation and biological evolution in the Ediacaran Doushantuo Formation  

E-Print Network [OSTI]

24061; Key Laboratory of Mineral Resources, Institute of Geology and Geophysics, Chinese Academy Ediacaran oceans were pervasively oxidized) did evolution of oxygen-requiring taxa reach global distribution changes in the aftermath of widespread and potentially global ice ages, including the evolution

Jiang, Ganqing

39

Sulfur dioxide oxidation and plume formation at cement kilns  

SciTech Connect (OSTI)

Results of source sampling at the Glens Falls cement kiln in Glens Falls, N.Y., are reported for sulfur oxides, ammonia, hydrochloric acid, oxygen, and moisture content. The origin of a detached, high-opacity, persistent plume originating from the cement kiln stack is investigated. It is proposed that this plume is due to ammonium salts of SOx and sulfuric acid that have been formed in condensed water droplets in the plume by the pseudocatalytic action of ammonia. (1 diagram, 1 graph, 22 references, 7 tables)

Dellinger, B.; Grotecloss, G.; Fortune, C.R.; Cheney, J.L.; Homolya, J.B.

1980-10-01T23:59:59.000Z

40

Improving Corrosion Behavior in SCWR, LFR and VHTR Reactor Materials by Formation of a Stable Oxide  

SciTech Connect (OSTI)

The objective of this study is to understand the influence of the alloy microstructure and composition on the formation of a stable, protective oxide in the environments relevant to the SCWR and LFR reactor concepts, as well as to the VHTR. It is proposed to use state-of-the art techniques to study the fine structure of these oxides to identify the structural differences between stable and unstable oxide layers. The techniques to be used are microbeam synchrotron radiation diffraction and fluorescence, and cross-sectional transmission electron microcopy on samples prepared using focused ion beam.

Arthur T. Motta; Robert Comstock; Ning Li; Todd Allen; Gary Was

2009-12-21T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir(V), Ir(VI), or Ir(VII)?  

E-Print Network [OSTI]

Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir: Density functional calculations are used to revisit the reaction mechanism of water oxidation catalyzed oxidation at higher oxidation state even though it can also promote O-O bond formation. Therefore, [(bpy

Liao, Rongzhen

42

Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes  

E-Print Network [OSTI]

Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes ScienceDaily (Aug. 29, 2007) -- Moving beyond carbon nanotubes, researchers are developing insights-walled inorganic nanotubes could be useful in a range of nanotechnology applications that require precise control

Nair, Sankar

43

Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization and thermodynamic processes  

E-Print Network [OSTI]

643 Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization of oxygen defects in CoO using classical simulations. The charge localization in the oxygen vacancy has]. The defect concentration in the oxygen sublattice is several orders of magnitude smaller, but never- theless

Paris-Sud XI, Université de

44

Note: A method for minimizing oxide formation during elevated temperature nanoindentation  

SciTech Connect (OSTI)

A standardized method to protect metallic samples and minimize oxide formation during elevated-temperature nanoindentation was adapted to a commercial instrument. Nanoindentation was performed on Al (100), Cu (100), and W (100) single crystals submerged in vacuum oil at 200 °C, while the surface morphology and oxidation was carefully monitored using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results were compared to room temperature and 200 °C nanoindentation tests performed without oil, in order to evaluate the feasibility of using the oil as a protective medium. Extensive surface characterization demonstrated that this methodology is effective for nanoscale testing.

Cheng, I. C.; Hodge, A. M., E-mail: ahodge@usc.edu [Department of Aerospace and Mechanical Engineering, University of Southern California, 3650 McClintock Avenue OHE430, Los Angeles, California 90089 (United States); Garcia-Sanchez, E. [Department of Aerospace and Mechanical Engineering, University of Southern California, 3650 McClintock Avenue OHE430, Los Angeles, California 90089 (United States); Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Universidad S/N, San Nicolás de los Garza, NL 66450 (Mexico)

2014-09-15T23:59:59.000Z

45

Duplex Oxide Formation during Transient Oxidation of Cu-5%Ni(001) Investigated by In situ UHV-TEM and XPS  

SciTech Connect (OSTI)

The transient oxidation stage of a model metal alloy thin film was characterized with in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and analytic high-resolution TEM. We observed the formations of nanosized NiO and Cu{sub 2}O islands when Cu-5a5%Ni(100) was exposed to oxygen partial pressure, pO{sub 2} = 1 x 10{sup -4} Torr and various temperatures in situ. At 350 C epitaxial Cu{sub 2}O islands formed initially and then NiO islands appeared on the surface of the Cu{sub 2}O island, whereas at 750 C NiO appeared first. XPS and TEM was used to reveal a sequential formation of NiO and then Cu{sub 2}O islands at 550 C. The temperature-dependant oxide selection may be due to an increase of the diffusivity of Ni in Cu with increasing temperature.

Yang, J.C.; Starr, D.; Kang, Y.; Luo, L.; Tong, X.; Zhou, G.

2012-05-20T23:59:59.000Z

46

Effects of boundaries on pattern formation: Catalytic oxidation of CO on platinum  

SciTech Connect (OSTI)

The effect of boundaries on pattern formation was studied for the catalytic oxidation of carbon monoxide on platinum surfaces. Photolithography was used to create microscopic reacting domains on polycrystalline foils and single-crystal platinum (110) surfaces with inert titanium overlayers. Certain domain geometries give rise to patterns that have not been observed on the untreated catalyst and bring to light surface mechanisms that have no analog in homogeneous reaction-diffusion systems.

Graham, M.D. (Univ. of Wisconsin, Madison (United States)); Kevrekidis, I.G. (Princeton Univ., NJ (United States)); Asakura, K.; Lauterbach, J.; Krischer, K.; Rotermund, H.H.; Ertl, G. (Fritz-Haber-Institut de Max-Planck-Gesellschaft, Berlin (Germany))

1994-04-01T23:59:59.000Z

47

Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films  

SciTech Connect (OSTI)

Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

2012-12-01T23:59:59.000Z

48

Thermodynamics of Uranyl Minerals: Enthalpies of Formation of Uranyl Oxide Hydrates  

SciTech Connect (OSTI)

The enthalpies of formation of seven uranyl oxide hydrate phases and one uranate have been determined using high-temperature oxide melt solution calorimetry: [(UO{sub 2}){sub 4}O(OH){sub 6}](H{sub 2}O){sub 5}, metaschoepite; {beta}-UO{sub 2}(OH){sub 2}; CaUO{sub 4}; Ca(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}(H{sub 2}O){sub 8}, becquerelite; Ca(UO{sub 2}){sub 4}O{sub 3}(OH){sub 4}(H{sub 2}O){sub 2}; Na(UO{sub 2})O(OH), clarkeite; Na{sub 2}(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}(H{sub 2}O){sub 7}, the sodium analogue of compreignacite and Pb{sub 3}(UO{sub 2}){sub 8}O{sub 8}(OH){sub 6}(H{sub 2}O){sub 2}, curite. The enthalpy of formation from the binary oxides, {Delta}H{sub f-ox}, at 298 K was calculated for each compound from the respective drop solution enthalpy, {Delta}H{sub ds}. The standard enthalpies of formation from the elements, {Delta}H{sub f}{sup o}, at 298 K are -1791.0 {+-} 3.2, -1536.2 {+-} 2.8, -2002.0 {+-} 3.2, -11389.2 {+-} 13.5, -6653.1 {+-} 13.8, -1724.7 {+-} 5.1, -10936.4 {+-} 14.5 and -13163.2 {+-} 34.4 kJ mol{sup -1}, respectively. These values are useful in exploring the stability of uranyl oxide hydrates in auxiliary chemical systems, such as those expected in U-contaminated environments.

K. Kubatko; K. Helean; A. Navrotsky; P.C. Burns

2005-05-11T23:59:59.000Z

49

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface  

SciTech Connect (OSTI)

Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

Nichau, A.; Schnee, M.; Schubert, J.; Bernardy, P.; Hollaender, B.; Buca, D.; Mantl, S. [Peter Gruenberg Institute 9 (PGI9-IT), Forschungszentrum Juelich, 52425 Juelich (Germany); JARA-Fundamentals of Future Information Technologies, 52425 Juelich (Germany); Besmehn, A.; Breuer, U. [Central Division for Chemical Analysis (ZCH), Forschungszentrum Juelich, 52425 Juelich (Germany); Rubio-Zuazo, J.; Castro, G. R. [Spanish CRG BM25 Beamline-SpLine, European Synchrotron Radiation Facility (ESRF), Rue Jules Horowitz BP 220, F-38043 Grenoble, Cedex 09 (France); Muecklich, A.; Borany, J. von [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum' Dresden-Rossendorf e.V., 01314 Dresden (Germany)

2013-04-21T23:59:59.000Z

50

Third phase formation in nitric acid extraction by n-octyl(phenyl)-n,n-diisobutylcarbamoylmethylphosphine oxide  

SciTech Connect (OSTI)

The third phase formation was studied as a function of n-octyl(phenyl)-N,N-diisobutylcarbamoylmethylphosphine oxide (CMPO) and tri-n-butyl phosphate (TBP) concentrations and temperature in the extraction of nitric acid. The concentration fractions of CMPO and TBP in the second and the third phases were determined by gas chromatography. Both CMPO and TBP were found to be enriched in the third phase. The concentrations of nitric acid in the second and the third phases relatively agreed with the calculated concentrations based on the extraction equilibrium constants of nitric acid by CMPO and TBP. The extraction of Np with the third phase formation was also discussed. 21 refs., 4 figs., 3 tabs.

Nagasaki, S.; Wisnubroto, D.S.; Enokida, Y.; Suzuki, A. (Univ. of Tokyo (Japan))

1994-03-01T23:59:59.000Z

51

On the phase formation of sputtered hafnium oxide and oxynitride films  

SciTech Connect (OSTI)

Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M. [Materials Chemistry, RWTH Aachen University, Kopernikusstr. 16, D-52056 Aachen (Germany); Konstantinidis, S. [Laboratoire de Chimie Inorganique et Analytique, Universite de Mons, Avenue Copernic 1, 7000 Mons (Belgium); Renaux, F.; Cossement, D. [Materia Nova Research Center, Avenue Copernic 1, 7000 Mons (Belgium); Munnik, F. [Forschungszentrum Dresden Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany)

2010-07-15T23:59:59.000Z

52

A Computational Approach to Understanding Aerosol Formation and Oxidant Chemistry in the Troposphere  

SciTech Connect (OSTI)

An understanding of the mechanisms and kinetics of aerosol formation and ozone production in the troposphere is currently a high priority because these phenomena are recognized as two major effects of energy-related air pollution. Atmospheric aerosols are of concern because of their effect on visibility, climate, and human health. Equally important, aerosols can change the chemistry of the atmosphere, in dramatic fashion, by providing new chemical pathways (in the condensed phase) unavailable in the gas phase. The oxidation of volatile organic compounds (VOCs) and inorganic compounds (e.g., sulfuric acid, ammonia, nitric acid, ions, and mineral) can produce precursor molecules that act as nucleation seeds. The U.S. Department of Energy (DOE) Atmospheric Chemistry Program (ACP) has identified the need to evaluate the causes of variations in tropospheric aerosol chemical composition and concentrations, including determining the sources of aerosol particles and the fraction of such that are of primary and secondary origin. In particular, the ACP has called for a deeper understanding into aerosol formation because nucleation creates substantial concentrations of fresh particles that, via growth and coagulation, influence the Earth's radiation budget. Tropospheric ozone is also of concern primarily because of its impact on human health. Ozone levels are controlled by NOx and by VOCs in the lower troposphere. The VOCs can be either from natural emissions from such sources as vegetation and phytoplankton or from anthropogenic sources such as automobiles and oil-fueled power production plants. The major oxidant for VOCs in the atmosphere is the OH radical. With the increase in VOC emissions, there is rising concern regarding the available abundance of HOx species needed to initiate oxidation. Over the last five years, there have been four field studies aimed at initial measurements of HOx species (OH and HO? radicals). These measurements revealed HOx levels that are two to four times higher than expected from the commonly assumed primary sources. Such elevated abundances of HOx imply a more photochemically active troposphere than previously thought. This implies that rates of ozone formation in the lower region of the atmosphere and the oxidation of SO? can be enhanced, thus promoting the formation of new aerosol properties. Central to unraveling this chemistry is the ability to assess the photochemical product distributions resulting from the photodissociation of by-products of VOC oxidation. We propose to use state-of-the-art theoretical techniques to develop a detailed understanding of the mechanisms of aerosol formation in multicomponent (mixed chemical) systems and the photochemistry of atmospheric organic species. The aerosol studies involve an approach that determines homogeneous gas-particle nucleation rates from knowledge of the molecular interactions that are used to define properties of molecular clusters. Over the past several years we developed Dynamical Nucleation Theory (DNT), a novel advance in the theoretical description of homogeneous gas-liquid nucleation, and applied it to gas-liquid nucleation of a single component system (e.g., water). The goal of the present research is to build upon these advances by extending the theory to multicomponent systems important in the atmosphere (such as clusters containing sulfuric acid, water, ions, ammonia, and organics). In addition, high-level ab initio electronic structure calculations will be used to unravel the chemical reactivity of the OH radical and water clusters.

Francisco, Joseph S.; Kathmann, Shawn M.; Schenter, Gregory K.; Dang, Liem X.; Xantheas, Sotiris S.; Garrett, Bruce C.; Du, Shiyu; Dixon, David A.; Bianco, Roberto; Wang, Shuzhi; Hynes, James T.; Morita, Akihiro; Peterson, Kirk A.

2006-04-18T23:59:59.000Z

53

Lithotrophic iron-oxidizing bacteria produce organic stalks to control mineral growth: implications for biosignature formation  

SciTech Connect (OSTI)

Neutrophilic Fe-oxidizing bacteria (FeOB) are often identified by their distinctive morphologies, such as the extracellular twisted ribbon-like stalks formed by Gallionella ferruginea or Mariprofundus ferrooxydans. Similar filaments preserved in silica are often identified as FeOB fossils in rocks. Although it is assumed that twisted iron stalks are indicative of FeOB, the stalk's metabolic role has not been established. To this end, we studied the marine FeOB M. ferrooxydans by light, X-ray and electron microscopy. Using time-lapse light microscopy, we observed cells excreting stalks during growth (averaging 2.2 {micro}m h(-1)). Scanning transmission X-ray microscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy show that stalks are Fe(III)-rich, whereas cells are low in Fe. Transmission electron microscopy reveals that stalks are composed of several fibrils, which contain few-nanometer-sized iron oxyhydroxide crystals. Lepidocrocite crystals that nucleated on the fibril surface are much larger ({approx}100 nm), suggesting that mineral growth within fibrils is retarded, relative to sites surrounding fibrils. C and N 1s NEXAFS spectroscopy and fluorescence probing show that stalks primarily contain carboxyl-rich polysaccharides. On the basis of these results, we suggest a physiological model for Fe oxidation in which cells excrete oxidized Fe bound to organic polymers. These organic molecules retard mineral growth, preventing cell encrustation. This model describes an essential role for stalk formation in FeOB growth. We suggest that stalk-like morphologies observed in modern and ancient samples may be correlated confidently with the Fe-oxidizing metabolism as a robust biosignature.

Chan, Clara S; Fakra, Sirine C; Emerson, David; Fleming, Emily J; Edwards, Katrina J

2011-07-01T23:59:59.000Z

54

The formation of light emitting cerium silicates in cerium-doped silicon oxides  

SciTech Connect (OSTI)

Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N{sub 2} at 1200 deg. C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce{sub 2}Si{sub 2}O{sub 7} or Ce{sub 4.667} (SiO{sub 4}){sub 3}O], the presence of which was confirmed by high resolution transmission electron microscopy.

Li Jing; Zalloum, Othman; Roschuk, Tyler; Heng Chenglin; Wojcik, Jacek; Mascher, Peter [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada)

2009-01-05T23:59:59.000Z

55

Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods  

SciTech Connect (OSTI)

The results of investigation of a memristor-matrix model on the basis of titanium-oxide nanoscale structures (ONSs) fabricated by methods of focused ion beams and atomic-force microscopy (AFM) are presented. The effect of the intensity of interaction between the AFM probe and the sample surface on the memristor effect in the titanium ONS is shown. The memristor effect in the titanium ONS is investigated by an AFM in the mode of spreading-resistance map. The possibility of the recording and erasure of information in the submicron cells is shown on the basis of using the memristor effect in the titanium ONS, which is most promising for developing the technological processes of the formation of resistive operation memory cells.

Avilov, V. I.; Ageev, O. A.; Kolomiitsev, A. S.; Konoplev, B. G., E-mail: kbg@sfedu.ru; Smirnov, V. A.; Tsukanova, O. G. [Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering (Russian Federation)

2014-12-15T23:59:59.000Z

56

Manganese sulfide formation via concomitant microbial manganese oxide and thiosulfate reduction  

SciTech Connect (OSTI)

The dissimilatory metal-reducing bacterium, Shewanella oneidensis MR-1 produced {gamma}-MnS (rambergite) nanoparticles during the concurrent reduction of MnO{sub 2} and thiosulfate coupled to H{sub 2} oxidation. To investigate effect of direct microbial reduction of MnO{sub 2} on MnS formation, two MR-1 mutants defective in outer membrane c-type cytochromes ({Delta}mtrC/{Delta}omcA and {Delta}mtrC/{Delta}omcA/{Delta}mtrF) were also used and it was determined that direct reduction of MnO{sub 2} was dominant relative to chemical reduction by biogenic sulfide generated from thiosulfate reduction. Although bicarbonate was excluded from the medium, incubations of strain MR-1 with lactate as the electron donor produced MnCO{sub 3} (rhodochrosite) as well as MnS in nearly equivalent amounts as estimated by micro X-ray diffraction (micro-XRD) analysis. It was concluded that carbonate released from lactate metabolism promoted MnCO{sub 3} formation and that Mn(II) mineralogy was strongly affected by carbonate ions even in the presence of abundant sulfide and weakly alkaline conditions expected to favor the precipitation of MnS. Formation of MnS, as determined by a combination of micro-XRD, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction analyses was consistent with equilibrium speciation modeling predictions. Biogenic manganese sulfide may be a manganese sink in the Mn biogeochemical cycle in select environments such as deep anoxic marine basins within the Baltic Sea.

Lee, Ji-Hoon; Kennedy, David W.; Dohnalkova, Alice; Moore, Dean A.; Nachimuthu, Ponnusamy; Reed, Samantha B.; Fredrickson, Jim K.

2011-12-13T23:59:59.000Z

57

Gating of Permanent Molds for ALuminum Casting  

SciTech Connect (OSTI)

This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

David Schwam; John F. Wallace; Tom Engle; Qingming Chang

2004-03-30T23:59:59.000Z

58

Conducting oxide formation and mechanical endurance of potential solid-oxide fuel cell interconnects in coal syngas environment  

SciTech Connect (OSTI)

The oxidation properties of potential SOFCs materials Crofer 22 APU, Ebrite and Haynes 230 exposed in coal syngas at 800 °C for 100 h were studied. The phases and surface morphology of the oxide scales were characterized by X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray analysis (EDX). The mechanical endurance and electrical resistance of the conducting oxides were characterized by indentation and electrical impedance, respectively. It was found that the syngas exposure caused the alloys to form porous oxide scales, which increased the electrical resistant and decreased the mechanical stability. As for short-term exposure in syngas, neither carbide nor metal dusting was found in the scales of all samples.

Liu, Kejia; Luo, Junhang; Johnson, Christopher; Liu, Xingbo; Lang, J.; Mao, S.X.

2008-08-15T23:59:59.000Z

59

Manganese sulfide formation via concomitant microbial manganese oxide and thiosulfate reduction.  

SciTech Connect (OSTI)

The dissimilatory metal-reducing bacterium, Shewanella oneidensis MR-1 produced ?-MnS (rambergite) nanoparticles under the concurrent reduction of synthetic MnO2 and thiosulfate coupled to H2 oxidation. Using two MR-1 mutants defective in outer membrane c-type cytochromes (?mtrC/?omcA and ?mtrC/?omcA/?mtrF) to eliminate the direct reduction pathway for solid electron acceptors, it was determined that respiratory reduction of MnO2 was dominant relative to chemical reduction by biogenic sulfide generated from bacterial thiosulfate reduction. Although bicarbonate was excluded from the medium, incubations of MR-1 using lactate as the sole electron donor produced MnCO3 (rhodochrosite) as well as MnS in nearly equivalent amounts as estimated by micro X-ray diffraction (micro-XRD) analysis. It was concluded that carbonate released from lactate metabolism promoted MnCO3 formation and that Mn(II) mineralogy was strongly affected by carbonate ions even in the presence of abundant sulfide and weakly alkaline conditions that favor the precipitation of MnS. Formation of the biogenic MnS, as determined by a combination of micro-XRD, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction analyses was consistent with equilibrium speciation modeling predictions. Although biogenic MnS likely only forms and is stable over a relatively narrow range of conditions, it may be a significant sink for Mn in anoxic marine basins and terrestrial subsurface sediments where Mn and sulfur compounds are undergoing concurrent reduction.

Lee, Ji-Hoon; Kennedy, David W.; Dohnalkova, Alice; Moore, Dean A.; Nachimuthu, Ponnusamy; Reed, Samantha B.; Fredrickson, Jim K.

2011-12-27T23:59:59.000Z

60

Formation of Nanocrystalline Germanium via Oxidation of Si?.??Ge?.?? for Memory Device Applications  

E-Print Network [OSTI]

In this work, we studied the possibility of synthesizing nanocrystalline germanium (Ge) via dry and wet oxidation of both amorphous and polycrystalline Si?.??Ge?.?? films. In dry oxidation, Ge was rejected from the growing ...

Kan, Eric Win Hong

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

PII S0016-7037(98)00136-7 The kinetics of mixed Ni-Al hydroxide formation on clay and aluminum oxide minerals  

E-Print Network [OSTI]

PII S0016-7037(98)00136-7 The kinetics of mixed Ni-Al hydroxide formation on clay and aluminum. This finding indicates that the dissolution of clay and aluminum oxide minerals can be promoted by metal ions

Sparks, Donald L.

62

Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors  

E-Print Network [OSTI]

We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

2014-04-08T23:59:59.000Z

63

Detailed kinetic study of anisole pyrolysis and oxidation to understand tar formation during biomass  

E-Print Network [OSTI]

biomass combustion and gasification Milena Nowakowska, Olivier Herbinet, Anthony Dufour, Pierre. Methoxyphenols are one of the main precursors of PAH and soot in biomass combustion and gasification. Keywords: Anisole; Pyrolysis; Oxidation; Tars; Biomass; Kinetic modeling Corresponding author

Paris-Sud XI, Université de

64

Quantitative X-ray microanalysis of submicron carbide formation in chromium (III) oxide rich scale  

SciTech Connect (OSTI)

This paper discusses the chemical microanalysis techniques adapted to identify the precipitates that form on the surface of, or within, the oxide scale of a Fe-22Cr ferritic steel during exposure to a carbon-monoxide rich environment at 750C for 800 hours. Examination of oxidized test coupons revealed the presence of a fiber like structure at the surface, shown in figure 1. Other studies have reported that these structures are carbon precipitates.

Collins, W.K.; Ziomek-Moroz, M.; Holcomb, G.R.; Danielson, P.; Hunt, A.H

2007-08-01T23:59:59.000Z

65

Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films  

SciTech Connect (OSTI)

A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.

Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M. [I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany and Jomo Kenyatta University of Agriculture and Technology, Box 62000 Nairobi (Kenya); I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen (Germany)

2004-08-02T23:59:59.000Z

66

Investigation of the possibility of intermediate formation of allyl alcohol in the process of oxidative acetoxylation of propylene on a palladium-copper zeolite catalyst  

SciTech Connect (OSTI)

The formation of allyl acetate in reactions of oxidative acetoxylation of propylene by labeled acetic acid and esterification of labeled acetic acid by allyl alcohol on a Pd, Cu-zeolite catalyst occur with complete conservation of the labeled oxygen of the original labeled acetic acid in the reaction product. The authors propose a reaction scheme for the oxidative acetoxylation of propylene, providing for the formation of allyl alcohol as an intermediate compound, present in a chemisorbed state in the form of a complex with a Pd atom. The gas-phase oxidative acetoxylation of propylene is an industrial method of producing allyl acetate.

Minachev, K.M.; Chizhov, O.S.; Kadentsev, V.I.; Kharlamov, V.V.; Nefedov, O.M.; Rodin, A.N.

1985-12-10T23:59:59.000Z

67

Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density  

SciTech Connect (OSTI)

In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

2013-09-30T23:59:59.000Z

68

Low interfacial trap density and sub-nm equivalent oxide thickness in In{sub 0.53}Ga{sub 0.47}As (001) metal-oxide-semiconductor devices using molecular beam deposited HfO{sub 2}/Al{sub 2}O{sub 3} as gate dielectrics  

SciTech Connect (OSTI)

We investigated the passivation of In{sub 0.53}Ga{sub 0.47}As (001) surface by molecular beam epitaxy techniques. After growth of strained In{sub 0.53}Ga{sub 0.47}As on InP (001) substrate, HfO{sub 2}/Al{sub 2}O{sub 3} high-{kappa} oxide stacks have been deposited in-situ after surface reconstruction engineering. Excellent capacitance-voltage characteristics have been demonstrated along with low gate leakage currents. The interfacial density of states (D{sub it}) of the Al{sub 2}O{sub 3}/In{sub 0.53}Ga{sub 0.47}As interface have been revealed by conductance measurement, indicating a downward D{sub it} profile from the energy close to the valence band (medium 10{sup 12} cm{sup -2}eV{sup -1}) towards that close to the conduction band (10{sup 11} cm{sup -2}eV{sup -1}). The low D{sub it}'s are in good agreement with the high Fermi-level movement efficiency of greater than 80%. Moreover, excellent scalability of the HfO{sub 2} has been demonstrated as evidenced by the good dependence of capacitance oxide thickness on the HfO{sub 2} thickness (dielectric constant of HfO{sub 2}{approx}20) and the remained low D{sub it}'s due to the thin Al{sub 2}O{sub 3} passivation layer. The sample with HfO{sub 2} (3.4 nm)/Al{sub 2}O{sub 3} (1.2 nm) as the gate dielectrics has exhibited an equivalent oxide thickness of {approx}0.93 nm.

Chu, L. K. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Merckling, C.; Dekoster, J.; Caymax, M. [Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Alian, A.; Heyns, M. [Katholieke Universiteit Leuven, 3001 Leuven (Belgium); Interuniversity Microelectronics Center (IMEC vzw), 3001 Leuven (Belgium); Kwo, J. [Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Hong, M. [Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

2011-07-25T23:59:59.000Z

69

Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation  

SciTech Connect (OSTI)

Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

X Teng; W Du; D Su; Q Wang; A Frenkel

2011-12-31T23:59:59.000Z

70

Optical NAND gate  

SciTech Connect (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

71

Theoretical model for methanol formation from CO and H/sub 2/ on zinc oxide surfaces  

SciTech Connect (OSTI)

Models are developed for the polar (0001) and nonpolar (1010) surfaces of ZnO in order to consider methanol formation from adsorbed carbon monoxide and hydrogen atoms. The heats of adsorption of H/sub x/CO and OH/sub x/CO (x = 0-3) species involved in methanol formation are computed to determine the enthalpy changes of reaction. Reaction sequences involving formyl or formate intermediates are considered. The reaction mechanism is catalyzed by the Cu/sup +/ to proceed through a methoxy intermediate on Cu/sup +//ZnO with a lower of the energy pathway. The ZnO surfaces are poor donors and function primarily as acceptors of electron density from CO. The donor role of Cu/sup +/ is demonstrated on the polar surface by increasing the heat of adsorption of acceptor adspecies and decreasing the heat of adsorption of donor adspecies. 22 references, 8 figures, 4 tables.

Baetzold, R.C.

1985-09-12T23:59:59.000Z

72

Formation of thin film Tl-based high-Tc? superconducting oxides from amorphous alloy precursors  

E-Print Network [OSTI]

the size of the A-cation relative to the B-cation leads to the shifting of the B and X ious. Compensating, the perovskite may then twist or lean to one side and may exhibit piezoelectric behavior or become electrically polarized, Other stoichiometric... anisotropic behavior of the supercurrent flow. Unfortunately this unwelcome anisotropic behavior is a common feature in the copper oxide superconductors. Because of the anisotropy in supercurrent flow, the crystal orientation becomes extremely important...

Williams, John Charles

1991-01-01T23:59:59.000Z

73

Oxidation of Helix-3 Methionines Precedes the Formation of PK Resistant PrPSc  

E-Print Network [OSTI]

cells expressing a chimera Mo/Ha PrP form. (B) Human and mouse normal brain homogenates were immunoblotted with the RGM antibody alone or preincubated with several PrP peptides in the Helix-3 Met area. (C) Immunoblots of HuPrP(23–230) wt and E200K with 3...P conversion may link the activity of the prion proteins with other neurodegenerative conditions affected by stress and oxidation, such as ALS, AD and Parkinson’s diseases [2,52,53], as well as to normal aging [45]. Materials and Methods Ethical statement...

Canello, Tamar; Frid, Kati; Gabizon, Ronen; Lisa, Silvia; Friedler, Assaf; Moskovitz, Jackob; Gasset, Marí a; Gabizon, Ruth

2010-07-01T23:59:59.000Z

74

Optical XOR gate  

DOE Patents [OSTI]

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Vawter, G. Allen

2013-11-12T23:59:59.000Z

75

Optical NOR gate  

DOE Patents [OSTI]

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-09-06T23:59:59.000Z

76

Synthesis gas formation by catalytic oxidation of methane in fluidized bed reactors  

SciTech Connect (OSTI)

The production of synthesis gas (CO + H[sub 2]) by the catalytic partial oxidation of CH[sub 4] in air or O[sub 2] in static fluidized beds at atmospheric pressure has been examined over Pt, Rh, and Ni catalysts coated on 100-[mu]m [alpha]-Al[sub 2]O[sub 3] beads. With CH[sub 4]/air feeds, CO and H[sub 2] selectivities as high as 95% with >90% CH[sub 4] conversion were obtained on Rh and Ni catalysts at contact times of 0.1-0.5 sec. Pt catalysts were found to have significantly lower selectivities for all the three catalysts were improved by heating the reaction mixture above the autothermal reactor temperature and using O[sub 2] instead of air. The selectivities and conversions were fairly constant over the range of contact time s used. Probable reaction pathways for CH[sub 4] oxidation in fluidized beds are discussed. 31 refs., 6 figs.

Bharadwaj, S.S.; Schmidt, L.D. (Univ. of Minnesota, Minneapolis (United States))

1994-03-01T23:59:59.000Z

77

Fundamental Studies of Irradiation-Induced Defect Formation and Fission Product Dynamics in Oxide Fuels  

SciTech Connect (OSTI)

The objective of this research program is to address major nuclear fuels performance issues for the design and use of oxide-type fuels in the current and advanced nuclear reactor applications. Fuel performance is a major issue for extending fuel burn-up which has the added advantage of reducing the used fuel waste stream. It will also be a significant issue with respect to developing advanced fuel cycle processes where it may be possible to incorporate minor actinides in various fuel forms so that they can be 'burned' rather than join the used fuel waste stream. The potential to fission or transmute minor actinides and certain long-lived fission product isotopes would transform the high level waste storage strategy by removing the need to consider fuel storage on the millennium time scale.

James Stubbins

2012-12-19T23:59:59.000Z

78

Contributions Of Stress And Oxidation On The Formation Of Whiskers In Pb-Free Solders  

SciTech Connect (OSTI)

This report summarizes the research activities of WP-1754. The study focusses on the environmental factors influencing formation of lead free whiskers on electrodeposited tin coatings over copper (or copper containing) substrates. Much of the initial results are summarized in an interim report. From the initial results, two main areas were chosen to be the focus of additional research: the demonstration of effects of elastic stress state in the nucleation of whiskers and the confirmation of the effect of oxygen/nitrogen ratio in the formation of whiskers. Different levels of elastic stress were induced with the incorporation of a custom designed fixture that loaded the substrates in a four-point bending configuration and were maintained in an environmental chamber under conditions deemed favorable for whisker growth. The results show that induced elastic stress slightly increased the concentration of nucleation sites of whiskers. The effects of oxygen content were studied by aging substrates in gas vials of varying absolute pressure and different oxygen/nitrogen ratios. The concentration of whiskers were measured and appear to be sensitive to absolute pressure but are not sensitive to oxygen content (as previously observed).

Duncan, A. J.; Hoffman, E. N.

2014-03-25T23:59:59.000Z

79

Advanced insulated gate bipolar transistor gate drive  

DOE Patents [OSTI]

A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

2009-08-04T23:59:59.000Z

80

E-Print Network 3.0 - attenuates oxidative stress Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stefan... describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process... dielectrics (silicon oxynitride or metal oxides), and...

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

E-Print Network 3.0 - attenuating oxidative stress Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stefan... describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process... dielectrics (silicon oxynitride or metal oxides), and...

82

E-Print Network 3.0 - attenuate oxidative stress Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Stefan... describe the use of spectroscopic ellipsometry and other characterization techniques for gate oxide process... dielectrics (silicon oxynitride or metal oxides), and...

83

Alternative Gate Dielectrics on Semiconductors for MOSFET Device Applications  

SciTech Connect (OSTI)

We have investigated the synthesis and properties of deposited oxides on Si and Ge for use as alternative gate dielectrics in MOSFET applications. The capacitance and leakage current behavior of polycrystalline Y{sub 2}O{sub 3} films synthesized by pulsed-laser deposition is reported. In addition, we also discuss the growth of epitaxial oxide structures. In particular, we have investigated the use of silicide termination for oxide growth on (001) Si using laser-molecular beam epitaxy. In addition, we discuss a novel approach involving the use of hydrogen to eliminate native oxide during initial dielectric oxide nucleation on (001) Ge.

Norton, D.P.; Budai, J.D.; Chisholm, M.F.; Pennycook, S.J.; McKee, R.; Walker, F.; Lee, Y.; Park, C.

1999-12-06T23:59:59.000Z

84

Formation of mixed oxide powders in flames: Part I. TiO sub 2 --SiO sub 2  

SciTech Connect (OSTI)

Mixed oxide powders, e.g., Al{sub 2}O{sub 3}--TiO{sub 2}, SiO{sub 2}--GeO{sub 2}, and TiO{sub 2}--SiO{sub 2}, are used in industry to produce ceramics, optical fibers, catalysts, and paint opacifiers. The properties of these products depend upon the morphology of the powders. Ceramics and optical fibers are produced using either a uniform mixture of multicomponent particles or a uniform solution. The desired morphology for catalysts is a high surface area and many active sites. TiO{sub 2} coated with a layer of SiO{sub 2} is the desired structure for use as a paint opacifier. In this paper, TiO{sub 2}--SiO{sub 2} mixed oxide powders were synthesized using a counterflow diffusion flame burner. TiCl{sub 4} and SiCl{sub 4} were used as source materials for the formation of oxide particles in hydrogen-oxygen flames. In-situ particle sizes were determined using dynamic light scattering. A thermophoretic sampling method also was used to collect particles directly onto carbon coated grids, and their size, morphology, and crystalline form examined using a transmission electron microscope. A photomultiplier at 90{degree} to the argon ion laser beam was used to measure the light-scattering intensity. The effect of temperature and of Si to Ti concentration ratio on particle morphology was investigated. Strong temperature dependence was observed. At high temperatures, TiO{sub 2} particles were covered with discrete SiO{sub 2} particles. At low temperatures, the structure changes to TiO{sub 2} particles encapsulated by SiO{sub 2}. TEM diffraction pattern measurements showed that the TiO{sub 2} is rutile and the SiO{sub 2} is amorphous silica. At high Si to Ti ratios, SiO{sub 2}-encapsulated TiO{sub 2} particles form. At low Si to Ti ratios, one obtains TiO{sub 2} particles covered with discrete SiO{sub 2} particles.

Hung, C.; Katz, J.L. (Department of Chemical Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States))

1992-07-01T23:59:59.000Z

85

Cardiac gated ventilation  

SciTech Connect (OSTI)

There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

Hanson, C.W. III [Hospital of the Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. Anesthesia; Hoffman, E.A. [Univ. of Iowa College of Medicine, Iowa City, IA (United States). Div. of Physiologic Imaging

1995-12-31T23:59:59.000Z

86

Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)  

SciTech Connect (OSTI)

The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4?×?3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

2014-04-07T23:59:59.000Z

87

Enhanced spin signals due to native oxide formation in Ni{sub 80}Fe{sub 20}/Ag lateral spin valves.  

SciTech Connect (OSTI)

Large nonlocal spin valve signals are reported in mesoscopic Ni{sub 80}Fe{sub 20}/Ag lateral spin valves upon exposing them to air. Magnetotransport measurements combined with transmission electron microscopy show that the formation of a native oxide layer at the Ni{sub 80}Fe{sub 20}/Ag interface is responsible for the large signals. The results indicate that lateral spin valves with superior performance to those based on high-resistance tunnel barriers can be achieved via controllable growth of native permalloy oxides.

Mihajlovic, G.; Schreiber, D. K.; Liu, Y.; Pearson, J. E.; Bader, S. D.; Petford-Long, A. K.; Hoffmann, A.; Northwestern Univ.

2010-01-01T23:59:59.000Z

88

Golden Gate Park Marina Blvd.  

E-Print Network [OSTI]

St. Eureka S.VanNessAve. M arket St. Broadway St. To Golden Gate Bridge H ow ard St. Folsom St. Bryant St. 10 North / Golden Gate Bridge 2. Exit I­280 North toward Downtown San Francisco 3. Exit Mariposa St. toward80 280 Presidio Golden Gate Park Lincoln Park Buena Vista Park 101 101 101 101 1 1 Marina Blvd. Bay

Derisi, Joseph

89

Peculiarities of formation of phase composition, porous structure, and catalytic properties of tungsten oxide-based macroporous materials fabricated by sol–gel synthesis  

SciTech Connect (OSTI)

The method of template sol–gel synthesis of tungsten oxide-based macroporous materials using ‘core–shell’ latex particles as colloid templates is described. The chemical composition and structural characteristics of the synthesized macroporous oxide systems have been investigated. The peculiarities of formation of material phase composition and macroporous structure under different template thermal destruction conditions have been revealed. An optimal method of a targeted synthesis of the crystalline tungsten(VI) oxide having a defect-free macroporous structure (average pore size 160 nm) and efficient catalytic properties under organic liquid phase oxidation conditions has been suggested. The prospects of the fabricated material application as catalysts of hydrothermal oxidation of radionuclide organic complexes at radioactive waste decontamination have been demonstrated. - Highlights: • Macroporous tungsten oxides were fabricated via sol–gel process. • The correlation between synthesis conditions and composition was determined. • Influence of synthesis conditions on porous structure has been explained. • The effects of template thermodestruction have been set up. • High potential of such materials for catalysis applications has been shown.

Papynov, Evgeniy Konstantinovich, E-mail: Papynov@mail.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Suhanova, 8, Vladivostok 690091 (Russian Federation); Mayorov, Vitaliy Yurevich, E-mail: 024205@inbox.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Palamarchuk, Marina Sergeevna, E-mail: 02.06.1984@mail.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Avramenko, Valentin Aleksandrovich, E-mail: avramenko1@yandex.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Suhanova, 8, Vladivostok 690091 (Russian Federation)

2014-02-15T23:59:59.000Z

90

Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature and by-products formation  

E-Print Network [OSTI]

Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature efficiency together with the catalyst activation temperature when a Diesel Oxidation Catalyst (DOC) is placed downstream to a multi-plans Dielectric Barrier Discharge (DBD) reactor. In order to simulate Diesel engine

Paris-Sud XI, Université de

91

Surface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission performance  

E-Print Network [OSTI]

the merits of molybdenum Mo silicide formation on gated polycrystalline silicon poly-Si field emitters. Metal, any metal silicide can be adopted without reSurface application of molybdenum silicide onto gated poly-Si emitters for enhanced field emission

Lee, Jong Duk

92

Effects of fluorine incorporation into HfO{sub 2} gate dielectrics on InP and In{sub 0.53}Ga{sub 0.47}As metal-oxide-semiconductor field-effect-transistors  

SciTech Connect (OSTI)

In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO{sub 2}/InP and HfO{sub 2}/In{sub 0.53}Ga{sub 0.47}As gate stack are presented. F had been introduced into HfO{sub 2} gate dielectric by postgate CF{sub 4} plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO{sub 2} bulk and less interface trap density at the HfO{sub 2}/III-V interface.

Chen Yenting; Zhao Han; Wang Yanzhen; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Texas 78758 (United States)

2010-06-21T23:59:59.000Z

93

On the interest of carbon-coated plasma reactor for advanced gate stack etching processes  

SciTech Connect (OSTI)

In integrated circuit fabrication the most wide spread strategy to achieve acceptable wafer-to-wafer reproducibility of the gate stack etching process is to dry-clean the plasma reactor walls between each wafer processed. However, inherent exposure of the reactor walls to fluorine-based plasma leads to formation and accumulation of nonvolatile fluoride residues (such as AlF{sub x}) on reactor wall surfaces, which in turn leads to process drifts and metallic contamination of wafers. To prevent this while keeping an Al{sub 2}O{sub 3} reactor wall material, a coating strategy must be used, in which the reactor is coated by a protective layer between wafers. It was shown recently that deposition of carbon-rich coating on the reactor walls allows improvements of process reproducibility and reactor wall protection. The authors show that this strategy results in a higher ion-to-neutral flux ratio to the wafer when compared to other strategies (clean or SiOCl{sub x}-coated reactors) because the carbon walls load reactive radical densities while keeping the same ion current. As a result, the etching rates are generally smaller in a carbon-coated reactor, but a highly anisotropic etching profile can be achieved in silicon and metal gates, whose etching is strongly ion assisted. Furthermore, thanks to the low density of Cl atoms in the carbon-coated reactor, silicon etching can be achieved almost without sidewall passivation layers, allowing fine critical dimension control to be achieved. In addition, it is shown that although the O atom density is also smaller in the carbon-coated reactor, the selectivity toward ultrathin gate oxides is not reduced dramatically. Furthermore, during metal gate etching over high-k dielectric, the low level of parasitic oxygen in the carbon-coated reactor also allows one to minimize bulk silicon reoxidation through HfO{sub 2} high-k gate dielectric. It is then shown that the BCl{sub 3} etching process of the HfO{sub 2} high-k material is highly selective toward the substrate in the carbon-coated reactor, and the carbon-coating strategy thus allows minimizing the silicon recess of the active area of transistors. The authors eventually demonstrate that the carbon-coating strategy drastically reduces on-wafer metallic contamination. Finally, the consumption of carbon from the reactor during the etching process is discussed (and thus the amount of initial deposit that is required to protect the reactor walls) together with the best way of cleaning the reactor after a silicon etching process.

Ramos, R.; Cunge, G.; Joubert, O. [Freescale Semiconductor Inc., 850 Rue Jean Monnet, 38921 Crolles Cedex (France) and Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France)

2007-03-15T23:59:59.000Z

94

PHYSICAL REVIEW B 86, 085123 (2012) Composition-dependent oxygen vacancy formation in multicomponent wide-band-gap oxides  

E-Print Network [OSTI]

PHYSICAL REVIEW B 86, 085123 (2012) Composition-dependent oxygen vacancy formation University of Science and Technology, Rolla, Missouri 65409, USA (Received 17 April 2012; revised manuscript received 19 July 2012; published 16 August 2012) The formation and distribution of oxygen vacancy

Medvedeva, Julia E.

95

Penn State DOE GATE Program  

SciTech Connect (OSTI)

The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

Anstrom, Joel

2012-08-31T23:59:59.000Z

96

Developing Language Processing Components with GATE  

E-Print Network [OSTI]

Developing Language Processing Components with GATE (a User Guide) For GATE version 3 beta 1 (July.3 Troubleshooting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 3.4 [D] Get Started

Maynard, Diana

97

Hafnium silicide formation on Si(100) upon annealing  

SciTech Connect (OSTI)

High dielectric constant materials, such as HfO{sub 2}, have been extensively studied as alternatives to SiO{sub 2} in new generations of Si based devices. Hf silicate/silicide formation has been reported in almost all literature studies of Hf based oxides on Si, using different methods of preparation. A silicate interface resembles close to the traditional Si/SiO{sub 2}. The silicate very likely forms a very sharp interface between the Si substrate and the metal oxide, and would be suitable for device applications. However, the thermal instability of the interfacial silicate/oxide film leads to silicidation, causing a dramatic loss of the gate oxide integrity. Despite the importance of the Hf silicide surface and interface with Si, only a few studies of this surface are present in the literature, and a structural determination of the surface has not been reported. This paper reports a study of the Hf silicide formation upon annealing by using a combination of XPS, LEED, and x-ray photoelectron diffraction (XPD) analyses. Our results clearly indicate the formation of a unique ordered Hf silicide phase (HfSi{sub 2}), which starts to crystallize when the annealing temperature is higher than 550 deg. C.

Siervo, A. de [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Laboratorio Nacional de Luz Sincrotron, Caixa Postal 6192, 13084-971, Campinas, Sao Paulo (Brazil); Fluechter, C. R.; Weier, D.; Schuermann, M.; Dreiner, S.; Westphal, C. [Experimentelle Physik 1, Universitaet Dortmund, Otto-Hahn-Str. 4, D 44221 Dortmund (Germany); Carazzolle, M. F.; Pancotti, A.; Landers, R.; Kleiman, G. G. [Instituto de Fisica 'Gleb Wataghin', Universidade Estadual de Campinas, Caixa Postal 6165, 13083-970, Campinas, Sao Paulo (Brazil)

2006-08-15T23:59:59.000Z

98

Role of the Berry Phase in the Formation of Stripes in Manganese Oxides 3 Takashi Hotta y and Yasutami Takada  

E-Print Network [OSTI]

106­8666, Japan Hiroyasu Koizumi Faculty of Science, Himeji Institute of Technology, Kanaji, Kamigori, Ako­gun, Hyogo 678­1297, Japan (25 November 1998) In order to gain an insight into the formation elec­ tron correlation, and (iv) strong electron­phonon cou­ pling leading to the Jahn­Teller (JT

Takada, Yasutami

99

Non-Hermitian quantum gates are more common than Hermitian quantum gates  

E-Print Network [OSTI]

Most of the frequently used quantum gates (e.g., NOT, Hadamard, CNOT, SWAP, Toffoli, Fredkin and Pauli gates) are self-inverse (Hermitian). However, with a simple minded argument it is established that most of the allowed quantum gates are non-Hermitian (non-self-inverse). It is also shown that the % of non-Hermitian gates increases with the dimension. For example, 58.33% of the 2-qubit gates, 98.10% of the 3-qubit gates and 99.99% of the 4-qubit gates are non-Hermitian. As classical reversible gates are essentially permutation gates so the above statistics is strictly valid for classical reversible gates. Further, since Hermiticity is not of much interest in context of the classical reversible gate, hence the result implies that most of the allowed classical reversible gates are non-self-inverse.

Anirban Pathak

2013-09-16T23:59:59.000Z

100

SiC Power MOSFET with Improved Gate Dielectric  

SciTech Connect (OSTI)

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

2010-08-23T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Electrochemical formation of field emitters  

DOE Patents [OSTI]

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

Bernhardt, Anthony F. (Berkeley, CA)

1999-01-01T23:59:59.000Z

102

Non-covalent interactions of nitrous oxide with aromatic compounds: Spectroscopic and computational evidence for the formation of 1:1 complexes  

SciTech Connect (OSTI)

We present the first study of intermolecular interactions between nitrous oxide (N{sub 2}O) and three representative aromatic compounds (ACs): phenol, cresol, and toluene. The infrared spectroscopic experiments were performed in a Ne matrix and were supported by high-level quantum chemical calculations. Comparisons of the calculated and experimental vibrational spectra provide direct identification and characterization of the 1:1 N{sub 2}O-AC complexes. Our results show that N{sub 2}O is capable of forming non-covalently bonded complexes with ACs. Complex formation is dominated by dispersion forces, and the interaction energies are relatively low (about ?3 kcal mol{sup ?1}); however, the complexes are clearly detected by frequency shifts of the characteristic bands. These results suggest that N{sub 2}O can be bound to the amino-acid residues tyrosine or phenylalanine in the form of ? complexes.

Cao, Qian [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland) [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland); School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Gor, Gennady Y., E-mail: ggor@princeton.edu [Department of Civil and Environmental Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Krogh-Jespersen, Karsten [Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, New Brunswick, New Jersey 08903 (United States)] [Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, New Brunswick, New Jersey 08903 (United States); Khriachtchev, Leonid [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland)] [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland)

2014-04-14T23:59:59.000Z

103

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect (OSTI)

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

104

Single qubit, two qubit gates and no signalling principle  

E-Print Network [OSTI]

In this work we investigate that whether one can construct single and two qubit gates for arbitrary quantum states from the principle of no signalling. We considered the problem for Pauli gates, Hadamard gate, C-Not gate.

Indranil Chakrabarty

2009-01-31T23:59:59.000Z

105

Li overlayer formation, oxidation and sputtering characteristics of Al-Li alloys and W/Al-Li composites for fusion applications  

SciTech Connect (OSTI)

The next generation of long pulse fusion devices will impose severe requirements on the properties of plasma-facing materials. In devices such as ITER, a divertor design is being considered, using a divertor plate which would be either tungsten or a low-Z material such as graphite or beryllium. Strongly segregating lithium alloys have been proposed as a means of producing a self-sustaining low-Z overlayer which lowers plasma Z{sub eff} and resists self-sputtering. Aluminum-lithium alloys are among the better-characterized lithium-bearing alloys, and it has been demonstrated that lithium segregates strongly in aluminum. However, aluminum has a relatively low melting point, and for low lithium concentrations, the lithium diffusion rate is too slow to replenish lithium at the rate at which it is eroded by the incoming plasma. It has been suggested previously that the superionic {beta} phase Al-Li alloy (48--54 at. % Li) should have high enough diffusivity to be able to replenish surface lithium, and that incorporation of the {beta}-phase AlLi in a composite with tungsten would provide high temperature strength and melt layer stability, along with significantly better thermal conductivity than pure tungsten. Such a composite has been fabricated, as well as a variation containing titanium as a means of controlling oxidation at grain boundaries. The Li overlayer formation, erosion, and replenishment are characterized for the {beta}-phase LiAl alloy, and W-AlLi and W-Ti-AlLi composites. It is found that if there is no oxide layer to inhibit the Li segregation, Li diffusion is extremely rapid, and an oxygen-free Li overlayer is formed which is stable under continuous ion beam sputtering. 21 refs., 7 figs.

Krauss, A.R. (Argonne National Lab., IL (USA)); DeWald, A.B.; Scott, P.; Savage, H. (Corium Industries, Inc., Atlanta, GA (USA))

1990-01-01T23:59:59.000Z

106

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study  

E-Print Network [OSTI]

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh conditions that elucidate the role of oxygen in the functioning of silicon carbide field-effect gas sensors hydrogen-depleted state; competition between hydrogen oxidation and hydrogen diffusion to metal/ oxide

Tobin, Roger G.

107

Composite two-qubit quantum gates  

E-Print Network [OSTI]

We design composite two-qubit gates, based on the Ising-type interaction. The gates are robust against systematic errors in the qubits' interaction strength and the gate's implementation time. We give composite sequences, which cancel the error up to 6th order, and give a method to achieve even higher accuracy. Our sequences can compensate either relative or absolute errors. For relative error compensation the number of the ingredient gates grows linearly with the desired accuracy, while for absolute compensation only two gates are required to achieve infinitely accurate gates. We also consider an ion-trap implementation of our composite gates, where our sequences achieve simultaneous cancellation of the error in both the pulse area and the detuning.

Svetoslav S. Ivanov; Nikolay V. Vitanov

2015-03-30T23:59:59.000Z

108

Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor  

E-Print Network [OSTI]

monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures thanSulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho to hydrogen sulfide, even in the presence of hydrogen or oxygen at partial pressures of 20­600 times greater

Tobin, Roger G.

109

Formation and distribution of neutral vanadium, niobium, and tantalum oxide clusters: Single photon ionization at 26.5 eV  

E-Print Network [OSTI]

. INTRODUCTION Transition metals, as well as their oxides, carbides, ni- trides, and sulfides, are unique bonds at a surface.1 Transition metal oxides are employed extensively as catalysts in the chemical. During the ionization process the metal oxide clusters are almost free of fragmentation. The most stable

Rocca, Jorge J.

110

aluminum oxide thin: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

DEVICE LETTERS, VOL. 19, NO. 12, DECEMBER 1998 High-Performance Polycrystalline SiGe Thin-Film Materials Science Websites Summary: --The use of aluminum oxide as the gate...

111

Formation of mixed oxide powders in flames: Part II. SiO sub 2 --GeO sub 2 and Al sub 2 O sub 3 --TiO sub 2  

SciTech Connect (OSTI)

SiO{sub 2}--GeO{sub 2} and Al{sub 2}O{sub 3}--TiO{sub 2} mixed oxide powders were synthesized using a counterflow diffusion flame burner. SiCl{sub 4}, GeCl{sub 4}, Al(CH{sub 3}){sub 3}, and TiCl{sub 4} were used as source materials for the formation of oxide particles in hydrogen-oxygen flames. {ital In} {ital situ} particle sizes were determined using dynamic light-scattering. Powders were collected using two different methods, a thermophoretic method (particles are collected onto carbon coated TEM grids) and an electrophoretic method (particles are collected onto stainless steel strips). Their size, morphology, and crystalline form were examined using a transmission electron microscope and an x-ray diffractometer. A photomultiplier at 90{degree} to the argon ion laser beam was used to measure the light-scattering intensity. The formation of the mixed oxides was investigated using Si to Ge and Al to Ti ratios of 3:5 and 1:1, respectively. Heterogeneous nucleation of the SiO{sub 2} on the surface of the GeO{sub 2} was observed. In Al{sub 2}O{sub 3}--TiO{sub 2} mixtures, both oxide particles form at the same temperature. X-ray diffraction analysis of particles sampled at temperatures higher than 1553 K showed the presence of rutile, {gamma}--Al{sub 2}O{sub 3}, and aluminum titanate. Although the particle formation processes for SiO{sub 2}--GeO{sub 2} is very different from that for Al{sub 2}O{sub 3}--TiO{sub 2}, both mixed oxides result in very uniform mixtures.

Hung, C.; Miquel, P.F.; Katz, J.L. (Department of Chemical Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States))

1992-07-01T23:59:59.000Z

112

Quantum logic gates for superconducting resonator qudits  

SciTech Connect (OSTI)

We study quantum information processing using superpositions of Fock states in superconducting resonators as quantum d-level systems (qudits). A universal set of single and coupled logic gates is theoretically proposed for resonators coupled by superconducting circuits of Josephson junctions. These gates use experimentally demonstrated interactions and provide an attractive route to quantum information processing using harmonic oscillator modes.

Strauch, Frederick W. [Williams College, Williamstown, Massachusetts 01267 (United States)

2011-11-15T23:59:59.000Z

113

Automatically closing swing gate closure assembly  

DOE Patents [OSTI]

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

114

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications 2011 DOE...

115

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

116

GATE Center of Excellence at UAB in Lightweight Materials for...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

& Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for...

117

Vehicle Technologies Office Merit Review 2014: GATE Center of...  

Broader source: Energy.gov (indexed) [DOE]

GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. ti026vaidya2014p.pdf More Documents & Publications GATE...

118

Penn State DOE Graduate Automotive Technology Education (Gate...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education (Gate)...

119

University of Illinois at Urbana-Champaign's GATE Center for...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel...

120

GATE Center of Excellence at UAB in Lightweight Materials for...  

Broader source: Energy.gov (indexed) [DOE]

vaidya.pdf More Documents & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight...

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Formation of submicron oxide widths on aluminum in the presence of keV electron beams and CO/sub 2/ or N/sub 2/O  

SciTech Connect (OSTI)

The purpose of this paper is to report the size of oxide islands or line widths that can be grown as smaller diameter electron beams are used for the oxidation. The implications of the potential lateral resolution available between oxide lines for electronic materials are discussed. The localize dioxide growth on thin Al films occurs in the presence of .5 to 10 keV electron beams and high vacuum level pressures of carbon dioxide or nitrous oxide. Auger electron spectroscopy shows saturation of the O (KLL) signal and depletion of the Al (LMM) signal after an exposure of 5000 l carbon dioxide with a 2 keV beam of 7 A/sq. cm. The oxide is spatially restricted to the beam impact region and is stable for long periods of time in vacuum. The most plausible mechanism for this oxide growth is dissociation of the carbon dioxide or the nitrous oxide by the electron beam in the region of impingement on or near the surface. Oxygen atoms thus formed can then react with the Al, and carbon monoxide or nitrogen desorbs.

Pitts, J.R.; Massopust, T.P.; Czanderna, A.W.; Kazmerski, L.L.

1986-03-01T23:59:59.000Z

122

A Stochastic Approach for the Analysis of Fault Trees with Priority AND Gates  

E-Print Network [OSTI]

dependency gate PAND priority AND gate SEQ sequence enforcing gate WSP warm spare gate CSP cold spare gate time [1]. Failures can be disastrous for systems such as chemical plants, nuclear reactors, airplane gates that include the warm spare gate (WSP) and cold spare gate (CSP), and the functional dependency

Han, Jie

123

Electrochemical formation of field emitters  

DOE Patents [OSTI]

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.

Bernhardt, A.F.

1999-03-16T23:59:59.000Z

124

Locking apparatus for gate valves  

DOE Patents [OSTI]

A locking apparatus for fluid operated valves having a piston connected to the valve actuator which moves in response to applied pressure within a cylinder housing having a cylinder head, a catch block is secured to the piston, and the cylinder head incorporates a catch pin. Pressure applied to the cylinder to open the valve moves the piston adjacent to the cylinder head where the catch pin automatically engages the catch block preventing futher movement of the piston or premature closure of the valve. Application of pressure to the cylinder to close the valve, retracts the catch pin, allowing the valve to close. Included are one or more selector valves, for selecting pressure application to other apparatus depending on the gate valve position, open or closed, protecting such apparatus from damage due to premature closing caused by pressure loss or operational error.

Fabyan, Joseph (Livermore, CA); Williams, Carl W. (Manteca, CA)

1988-01-01T23:59:59.000Z

125

Graduate Automotive Technology Education (GATE) Center  

SciTech Connect (OSTI)

The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

Jeffrey Hodgson; David Irick

2005-09-30T23:59:59.000Z

126

Formation of nanofilament field emission devices  

DOE Patents [OSTI]

A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR); Musket, Ronald G. (Danville, CA); Bernhardt, Anthony F. (Berkeley, CA)

2000-01-01T23:59:59.000Z

127

Digital gate pulse generator for cycloconverter control  

DOE Patents [OSTI]

The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

1989-01-01T23:59:59.000Z

128

Gate potential control of nanofluidic devices  

E-Print Network [OSTI]

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

129

Yuanmingyuan East Gate of Peking University  

E-Print Network [OSTI]

Dingxiangyuan Cafeteria SupermarketI Parking 32 Northeast Gate C Building C Swimming Hall East Playground and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student Affairs

Gu, Jin

130

Effects of Additive Elements on the Phase Formation and Morphological Stability of Nickel Monosilicide Films  

SciTech Connect (OSTI)

Alloying elements can substantially affect the formation and morphological stability of nickel monosilicide. A comprehensive study of phase formation was performed on 24 Ni alloys with varying concentrations of alloying elements. Silicide films have been used for more than 15 years to contact the source, drain and gate of state-of-the-art complementary-metal-oxide-semiconductor (CMOS) devices. In the past, the addition of alloying elements was shown to improve the transformation from the high resistivity C49 to the low resistivity C54-TiSi{sub 2} phase and to allow for the control of surface and interface roughness of CoSi{sub 2} films as well as produce significant improvements with respect to agglomeration of the films. Using simultaneous time-resolved X-ray diffraction (XRD), resistance and light scattering measurements, we follow the formation of the silicide phases in real time during rapid thermal annealing. Additions to the Ni-Si system lead to modifications in the phase formation sequence at low temperatures (metal-rich phases), to variations in the formation temperatures of NiSi and NiSi{sub 2}, and to changes in the agglomeration behavior of the films formed. Of the 24 elements studied, additions of Mo, Re, Ta and W are amongst the most efficient to retard agglomeration while elements such as Pd, Pt and Rh are most efficient to retard the formation of NiSi{sub 2}.

Lavoie,C.; Detavernier, C.; Cabral, Jr. , C.; d'Heurle, F.; Kellock, A.; Jordan-Sweet, J.; Harper, J.

2006-01-01T23:59:59.000Z

131

GaTe semiconductor for radiation detection  

DOE Patents [OSTI]

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

132

Gate fidelity fluctuations and quantum process invariants  

SciTech Connect (OSTI)

We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

2011-07-15T23:59:59.000Z

133

The susceptibility of silicon-ion implanted gate insulators to x-ray radiation-induced defect generation  

SciTech Connect (OSTI)

This paper examines the x-ray susceptibility of silicon-ion implanted gate insulators of insulated gate-field effect transistors (IGFETs). It is found that silicon-ion implanted gate insulators appear to be much more susceptible to x-ray radiation induced defect generation than unimplanted devices. The residual defect density in silicon-implanted devices, following x-ray radiation, and subsequent postmetal annealing for up to 60 min is found to be greater than that in unimplanted devices. The results with silicon ions indicate that if the insulator is damaged by such a species during processing, as might occur due to knock-on from the gate electrode during source/drain formation, unannealable defects will form which would also tend to make the device structure more susceptible to radiation damage in a hostile environment, or to large hot- electron drift in conventional use.

Reisman, A.; Sune, C.T.; Williams, C.K. (MCNC, Research Triangle Park, NC (US))

1991-03-01T23:59:59.000Z

134

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray  

E-Print Network [OSTI]

Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means (HXPS, HAXPES) is applied to a thick (100 A° ) film of a metal gate TiN grown on top of a Si/MoSi2 of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror

Fadley, Charles

135

Direct observation of bias-dependence potential distribution in metal/HfO{sub 2} gate stack structures by hard x-ray photoelectron spectroscopy under device operation  

SciTech Connect (OSTI)

Although gate stack structures with high-k materials have been extensively investigated, there are some issues to be solved for the formation of high quality gate stack structures. In the present study, we employed hard x-ray photoelectron spectroscopy in operating devices. This method allows us to investigate bias dependent electronic states, while keeping device structures intact. Using this method, we have investigated electronic states and potential distribution in gate metal/HfO{sub 2} gate stack structures under device operation. Analysis of the core levels shifts as a function of the bias voltage indicated that a potential drop occurred at the Pt/HfO{sub 2} interface for a Pt/HfO{sub 2} gate structure, while a potential gradient was not observed at the Ru/HfO{sub 2} interface for a Ru/HfO{sub 2} gate structure. Angle resolved photoelectron spectroscopy revealed that a thicker SiO{sub 2} layer was formed at the Pt/HfO{sub 2} interface, indicating that the origin of potential drop at Pt/HfO{sub 2} interface is formation of the thick SiO{sub 2} layer at the interface. The formation of the thick SiO{sub 2} layer at the metal/high-k interface might concern the Fermi level pinning, which is observed in metal/high-k gate stack structures.

Yamashita, Y. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Yoshikawa, H.; Kobayashi, K. [National Institute for Materials Science, NIMS Beamline Station at SPring-8, 1-1-1 Kôto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan); Chikyo, T. [National Institute for Materials Science, Advanced Electric Materials Center, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

2014-01-28T23:59:59.000Z

136

Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO{sub 2}  

SciTech Connect (OSTI)

In this study, Mn silicate (MnSiO{sub 3}) barrier layers were formed on thermally grown SiO{sub 2} using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO{sub 2} substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 deg. C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO{sub 3} layer thickness obtainable using metallic Mn is {approx}1.7 nm. In contrast, a {approx}1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 deg. C, forming a MnSiO{sub 3} layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO{sub 3} growth results in a corresponding reduction in the SiO{sub 2} layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO{sub 2} interface facilitates the conversion of SiO{sub 2} to MnSiO{sub 3}, in agreement with previously published studies.

Casey, P.; Bogan, J.; Hughes, G. [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland); Lozano, J. G.; Nellist, P. D. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

2011-09-01T23:59:59.000Z

137

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Gate: the Construction of the Golden Gate Bridge and HighwayCommittee on Golden Gate Bridge and Highway District,versus the Golden Gate Bridge . . . . . . . . . . . . . . .

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

138

Voltage-gated Ion Channels and Gating Modifier Toxins William A. Catterall,* Sandrine Cestle,  

E-Print Network [OSTI]

;2 Abstract Voltage-gated sodium, calcium, and potassium channels generate electrical signals required and a pore loop. Their pores are formed by the S5/S6 segments and the pore loop between them and are gated and participate in calcium signaling pathways in nonexcitable cells. Because of their importance in many aspects

Paris-Sud XI, Université de

139

The Defeat of the Golden Gate Authority: Regional Planning and Local Power  

E-Print Network [OSTI]

Regional Politics and the Golden Gate Bridge, Philadelphia:Politics and the Golden Gate Bridge, won the Abel WolmanBridge and the Golden Gate Bridge. Moreover, interregional

Dyble, Louise Nelson

2012-01-01T23:59:59.000Z

140

Heralded quantum gates with integrated error detection in optical cavitites  

E-Print Network [OSTI]

We propose and analyze heralded quantum gates between qubits in optical cavities. They employ an auxiliary qubit to report if a successful gate occurred. In this manner, the errors, which would have corrupted a deterministic gate, are converted into a non-unity probability of success: once successful the gate has a much higher fidelity than a similar deterministic gate. Specifically, we describe that a heralded , near-deterministic controlled phase gate (CZ-gate) with the conditional error arbitrarily close to zero and the success probability that approaches unity as the cooperativity of the system, C, becomes large. Furthermore, we describe an extension to near-deterministic N- qubit Toffoli gate with a favorable error scaling. These gates can be directly employed in quantum repeater networks to facilitate near-ideal entanglement swapping, thus greatly speeding up the entanglement distribution.

J. Borregaard; P. Kómár; E. M. Kessler; A. S. Sørensen; M. D. Lukin

2015-01-05T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Engineering integrated photonics for heralded quantum gates  

E-Print Network [OSTI]

Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate implementation of the optimal known gate design which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show that device performance is more sensitive to the small deviations in the coupler reflectivity, arising due to the tolerance values of the fabrication method, than phase variations in the circuit. The mode fidelity was also shown to be less sensitive to reflectivity and phase errors than process fidelity. Our best device achieves a fidelity of 0.931+/-0.001 with the ideal 4x4 unitary circuit and a process fidelity of 0.680+/-0.005 with the ideal computational-basis process.

T. Meany; D. N. Biggerstaff; M. A. Broome; A. Fedrizzi; M. Delanty; A. Gilchrist; G. D. Marshall; M. J. Steel; A. G. White; M. J. Withford

2015-02-11T23:59:59.000Z

142

Sandia National Laboratories: i-GATE  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear Security Administration the1development Sandia,evaluatingfullhigher-performancestoragei-GATE ECIS and i-GATE:

143

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network [OSTI]

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

144

abnormal sensorimotor gating: Topics by E-print Network  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer...

145

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams 9 Accomplishments and Progress: GATE Directly Funded Students (2005-2011) GATE SCHOLAR...

146

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network [OSTI]

This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

147

Negative quantum capacitance in graphene nanoribbons with lateral gates  

E-Print Network [OSTI]

Negative quantum capacitance in graphene nanoribbons with lateral gates R. Reiter1, , U. Derra2 , S numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate

Florian, Libisch

148

Clustering of cyclic-nucleotide-gated channels in olfactory cilia  

E-Print Network [OSTI]

Clustering of cyclic-nucleotide-gated channels in olfactory cilia Richard J. Flannery* , Donald A channel clusters in olfactory cilia Key words: olfaction, receptor neuron, cyclic-nucleotide-gated channel of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG

French, Donald A.

149

Quantum Logic Gates using q-deformed Oscillators  

E-Print Network [OSTI]

We show that the quantum logic gates, {\\it viz.} the single qubit Hadamard and Phase Shift gates, can also be realised using q-deformed angular momentum states constructed via the Jordan-Schwinger mechanism with two q-deformed oscillators. {\\it Keywords :} quantum logic gates ; q-deformed oscillators ; quantum computation {\\it PACS:} 03.67.Lx ; 02.20.Uw

Debashis Gangopadhyay; Mahendra Nath Sinha Roy

2006-07-14T23:59:59.000Z

150

Downhole burner systems and methods for heating subsurface formations  

DOE Patents [OSTI]

A gas burner assembly for heating a subsurface formation includes an oxidant conduit, a fuel conduit, and a plurality of oxidizers coupled to the oxidant conduit. At least one of the oxidizers includes a mix chamber for mixing fuel from the fuel conduit with oxidant from the oxidant conduit, an igniter, and a shield. The shield includes a plurality of openings in communication with the oxidant conduit. At least one flame stabilizer is coupled to the shield.

Farmayan, Walter Farman (Houston, TX); Giles, Steven Paul (Damon, TX); Brignac, Jr., Joseph Phillip (Katy, TX); Munshi, Abdul Wahid (Houston, TX); Abbasi, Faraz (Sugarland, TX); Clomburg, Lloyd Anthony (Houston, TX); Anderson, Karl Gregory (Missouri City, TX); Tsai, Kuochen (Katy, TX); Siddoway, Mark Alan (Katy, TX)

2011-05-31T23:59:59.000Z

151

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients  

SciTech Connect (OSTI)

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated “beam-ON.” Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be “accurate” if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (?43%), suboptimal gating setup (?37%), and imperfect EIC within movie (?13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties.

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)] [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States); Parikh, Parag J., E-mail: pparikh@radonc.wustl.edu [Department of Radiation Oncology, Washington University School of Medicine, St Louis, Missouri (United States)

2013-03-01T23:59:59.000Z

152

Gate-controlled ultraviolet photo-etching of graphene edges  

SciTech Connect (OSTI)

The chemical reactivity of graphene under ultraviolet (UV) light irradiation is investigated under positive and negative gate electric fields. Graphene edges are selectively etched when negative gate voltages are applied while the reactivity is significantly suppressed for positive gate voltages. Oxygen adsorption onto graphene is significantly affected by the Fermi level of the final state achieved during previous electrical measurements. UV irradiation after negative-to-positive gate sweeps causes predominant oxygen desorption while UV irradiation after gate sweeps in the opposite direction causes etching of graphene edges.

Mitoma, Nobuhiko; Nouchi, Ryo [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)] [Nanoscience and Nanotechnology Research Center, Osaka Prefecture University, Sakai, Osaka 599-8570 (Japan)

2013-11-11T23:59:59.000Z

153

Molecular doping for control of gate bias stress in organic thin film transistors  

SciTech Connect (OSTI)

The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)] [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany) [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

2014-01-06T23:59:59.000Z

154

A Dual Platform for Selective Analyte Enrichment and Ionization in Mass Spectrometry Using Aptamer-Conjugated Graphene Oxide  

E-Print Network [OSTI]

-Conjugated Graphene Oxide Basri Gulbakan, Emir Yasun, M. Ibrahim Shukoor, Zhi Zhu, Mingxu You, Xiaohong Tan,, Hernan: This study demonstrates the use of aptamer-conju- gated graphene oxide as an affinity extraction a matrix and with greatly improved signal- to-noise ratios. Aptamer-conjugated graphene oxide has clear

Tan, Weihong

155

Classification of transversal gates in qubit stabilizer codes  

E-Print Network [OSTI]

This work classifies the set of diagonal gates that can implement a single or two-qubit transversal logical gate for qubit stabilizer codes. We show that individual physical gates on the underlying qubits that compose the code are restricted to have entries of the form $e^{i \\pi c/2^k}$ along their diagonal, resulting in a similarly restricted class of logical gates that can be implemented in this manner. Moreover, we show that all diagonal logical gates that can be implemented transversally by individual physical diagonal gates must belong to the Clifford hierarchy. Furthermore, we can use this result to prove a conjecture about transversal gates made by Zeng et al. in 2007.

Jonas T. Anderson; Tomas Jochym-O'Connor

2014-09-29T23:59:59.000Z

156

Arbitrary two-qubit computation in 23 elementary gates  

SciTech Connect (OSTI)

We address the problem of constructing quantum circuits to implement an arbitrary two-qubit quantum computation. We pursue circuits without ancilla qubits and as small a number of elementary quantum gates as possible. Our lower bound for worst-case optimal two-qubit circuits calls for at least 17 gates: 15 one-qubit rotations and 2 controlled-NOT (CNOT) gates. We also constructively prove a worst-case upper bound of 23 elementary gates, of which at most four (CNOT gates) entail multiqubit interactions. Our analysis shows that synthesis algorithms suggested in previous work, although more general, entail larger quantum circuits than ours in the special case of two qubits. One such algorithm has a worst case of 61 gates, of which 18 may be CNOT gates.

Bullock, Stephen S.; Markov, Igor L. [Department of Mathematics, The University of Michigan, Ann Arbor, Michigan 48109-2122, USA (United States); Mathematical and Computational Sciences Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899-8910, USA (United States); Department of Electrical Engineering and Computer Science, The University of Michigan, 1301 Beal Avenue-EECS, Ann Arbor, Michigan 48109-2122, USA (United States)

2003-07-01T23:59:59.000Z

157

IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 29, NO. 9, SEPTEMBER 2010 1409 Gate-Sizing-Based Single Vdd Test for Bridge  

E-Print Network [OSTI]

complementary metal- oxide-semiconductor and can constitute 50% or more, of total defect count [1]. A bridge, SEPTEMBER 2010 1409 Gate-Sizing-Based Single Vdd Test for Bridge Defects in Multivoltage Designs Saqib design technique. Recent research has shown that testing for resistive bridging faults in such designs

Chakrabarty, Krishnendu

158

Method for voltage-gated protein fractionation  

DOE Patents [OSTI]

We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

2012-04-24T23:59:59.000Z

159

Touch sensors based on planar liquid crystal-gated-organic field-effect transistors  

SciTech Connect (OSTI)

We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 ?m thick LC layer (4-cyano-4{sup ?}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 ?l/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = ?0.2 V and V{sub G} = ?1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Kim, Hwajeong [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Priority Research Center, Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Lee, Joon-Hyung [School of Materials Science and Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Park, Soo-Young; Kang, Inn-Kyu [Department of Polymer Science and Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of)

2014-09-15T23:59:59.000Z

160

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect (OSTI)

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

An elementary optical gate for expanding entanglement web  

E-Print Network [OSTI]

We introduce an elementary optical gate for expanding polarization entangled W states, in which every pair of photons are entangled alike. The gate is composed of a pair of 50:50 beamsplitters and ancillary photons in the two-photon Fock state. By seeding one of the photons in an $n$-photon W state into this gate, we obtain an $(n+2)$-photon W state after post-selection. This gate gives a better efficiency and a simpler implementation than previous proposals for $\\rm W$-state preparation.

Toshiyuki Tashima; Sahin Kaya Ozdemir; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

2008-03-13T23:59:59.000Z

162

Vehicle Technologies Office Merit Review 2014: GATE Center of...  

Broader source: Energy.gov (indexed) [DOE]

GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. lm081vaidya2014o.pdf More Documents & Publications...

163

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for...

164

High Temperature, High Voltage Fully Integrated Gate Driver Circuit  

Broader source: Energy.gov (indexed) [DOE]

temperature gate drive is being developed for use with future wide band gap (silicon carbide and gallium nitride) switching devices. * Universal drive that is capable of driving...

165

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Office of Environmental Management (EM)

Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

166

GATE Center of Excellence at UAB for Lightweight Materials and...  

Broader source: Energy.gov (indexed) [DOE]

Constante (PhD candidate) and Samuel Jasper (PhD candidate) working on composite beams GATE courses (some newly developed, some based on tailoring content in existing...

167

Sandia National Laboratories: ECIS and i-GATE: Innovation Hub...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

168

Gate Fidelities, Quantum Broadcasting, and Assessing Experimental Realization  

E-Print Network [OSTI]

We relate gate fidelities of experimentally realized quantum operations to the broadcasting property of their ideal operations, and show that the more parties a given quantum operation can broadcast to, the higher gate fidelities of its experimental realization are in general. This is shown by establishing the correspondence between two operational quantities, quantum state shareability and quantum broadcasting. This suggests that, to assess an experimental realization using gate fidelities, the worst case of realization such as noisy operations should be taken into account and then compared to obtained gate fidelities. In addition, based on the correspondence, we also translate results in quantum state shareability to their counterparts in quantum operations.

Hyang-Tag Lim; Young-Sik Ra; Yong-Su Kim; Yoon-Ho Kim; Joonwoo Bae

2011-06-29T23:59:59.000Z

169

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

E-Print Network [OSTI]

Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

Zhang, Yuanbo

2010-01-01T23:59:59.000Z

170

Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors  

SciTech Connect (OSTI)

Silicon carbide (SiC)-based field effect transistors (FETs) are gaining popularity as switching elements in power electronic circuits designed for high-temperature environments like hybrid electric vehicle, aircraft, well logging, geothermal power generation etc. Like any other power switches, SiC-based power devices also need gate driver circuits to interface them with the logic units. The placement of the gate driver circuit next to the power switch is optimal for minimising system complexity. Successful operation of the gate driver circuit in a harsh environment, especially with minimal or no heat sink and without liquid cooling, can increase the power-to-volume ratio as well as the power-to-weight ratio for power conversion modules such as a DC-DC converter, inverter etc. A silicon-on-insulator (SOI)-based high-voltage, high-temperature integrated circuit (IC) gate driver for SiC power FETs has been designed and fabricated using a commercially available 0.8--m, 2-poly and 3-metal bipolar-complementary metal oxide semiconductor (CMOS)-double diffused metal oxide semiconductor (DMOS) process. The prototype circuit-s maximum gate drive supply can be 40-V with peak 2.3-A sourcing/sinking current driving capability. Owing to the wide driving range, this gate driver IC can be used to drive a wide variety of SiC FET switches (both normally OFF metal oxide semiconductor field effect transistor (MOSFET) and normally ON junction field effect transistor (JFET)). The switching frequency is 20-kHz and the duty cycle can be varied from 0 to 100-. The circuit has been successfully tested with SiC power MOSFETs and JFETs without any heat sink and cooling mechanism. During these tests, SiC switches were kept at room temperature and ambient temperature of the driver circuit was increased to 200-C. The circuit underwent numerous temperature cycles with negligible performance degradation.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Blalock, Benjamin J [ORNL; Islam, Syed K [ORNL

2010-01-01T23:59:59.000Z

171

A 200 C Universal Gate Driver Integrated Circuit for Extreme Environment Applications  

SciTech Connect (OSTI)

High-temperature power converters (dc-dc, dc-ac, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, nuclear, and well logging. For successful realization of such high-temperature power conversion modules, the associated control electronics also need to perform at high temperature. This paper presents a silicon-on-insulator (SOI) based high-temperature gate driver integrated circuit (IC) incorporating an on-chip low-power temperature sensor and demonstrating an improved peak output current drive over our previously reported work. This driver IC has been primarily designed for automotive applications, where the underhood temperature can reach 200 C. This new gate driver prototype has been designed and implemented in a 0.8 {micro}m, 2-poly, and 3-metal bipolar CMOS-DMOS (Double-Diffused Metal-Oxide Semiconductor) on SOI process and has been successfully tested for up to 200 C ambient temperature driving a SiC MOSFET and a SiC normally-ON JFET. The salient feature of the proposed universal gate driver is its ability to drive power switches over a wide range of gate turn-ON voltages such as MOSFET (0 to 20 V), normally-OFF JFET (-7 to 3 V), and normally-ON JFET (-20 to 0 V). The measured peak output current capability of the driver is around 5 A and is thus capable of driving several power switches connected in parallel. An ultralow-power on-chip temperature supervisory circuit has also been integrated into the die to safeguard the driver circuit against excessive die temperature ({ge}220 C). This approach utilizes increased diode leakage current at higher temperature to monitor the die temperature. The power consumption of the proposed temperature sensor circuit is below 10 {micro}W for operating temperature up to 200 C.

Tolbert, Leon M [ORNL; Huque, Mohammad A [ORNL; Islam, Syed K [ORNL; Blalock, Benjamin J [ORNL

2012-01-01T23:59:59.000Z

172

Cavity-QED-based quantum phase gate  

E-Print Network [OSTI]

are detuned by an amount D from the cavity mode 1, i.e., vbc5n11D . A quantum phase gate with a p phase shift is implemented if the atom in its ground state uc& passes through the cavity such that ~1! the detuning D is equal to g2, and ~2! the interaction...- lowing. The effective Hamiltonian for the interaction, in the di- pole and rotating-wave approximations, is H5H01H1 , ~3! where H05\

Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

2003-01-01T23:59:59.000Z

173

Gate-teleportation-based blind quantum computation  

E-Print Network [OSTI]

Blind quantum computation (BQC) is a model in which a computation is performed on a server by a client such that the server is kept blind about the input, the algorithm, and the output of the computation. Here we layout a general framework for BQC which, unlike the previous BQC models, does not constructed on specific computational model. A main ingredient of our construction is gate teleportation. We demonstrate that our framework can be straightforwardly implemented on circuit-based models as well as measurement-based models of quantum computation. We illustrate our construction by showing that universal BQC is possible on correlation-space measurement-based quantum computation models.

Mear M. R. Koochakie

2014-12-25T23:59:59.000Z

174

David A Gates | Princeton Plasma Physics Lab  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-Series to UserProduct: CrudeOffice ofINL is aID Service FirstMeetingsA Gates

175

Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature  

SciTech Connect (OSTI)

Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al{sub 2}O{sub 3} gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?°C.

Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

2014-10-21T23:59:59.000Z

176

EMSL - oxides  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

oxides en Influence of Adsorption Site and Wavelength on the Photodesorption of NO from the (Fe,Cr)3O4(111) Mixed Oxide Surface. http:www.emsl.pnl.govemslwebpublications...

177

Optical AND and NOT gates at 40 Gbps using electro-absorption modulator/photodiode pairs.  

SciTech Connect (OSTI)

We demonstrate an optical gate architecture using electro-absorption modulator/photodiode pairs to perform AND and NOT functions. Optical bandwidth for both gates reach 40 GHz. Also shown are AND gate waveforms at 40 Gbps.

Tauke-Pedretti, Anna; Overberg, Mark E.; Skogen, Erik J.; Alford, Charles Fred; Sullivan, Charles Thomas; Vawter, Gregory Allen; Peake, Gregory Merwin; Torres, David L.

2010-06-01T23:59:59.000Z

178

Modeling gated neutron images of THD capsules  

SciTech Connect (OSTI)

Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

Wilson, Douglas Carl [Los Alamos National Laboratory; Grim, Gary P [Los Alamos National Laboratory; Tregillis, Ian L [Los Alamos National Laboratory; Wilke, Mark D [Los Alamos National Laboratory; Morgan, George L [Los Alamos National Laboratory; Loomis, Eric N [Los Alamos National Laboratory; Wilde, Carl H [Los Alamos National Laboratory; Oertel, John A [Los Alamos National Laboratory; Fatherley, Valerie E [Los Alamos National Laboratory; Clark, David D [Los Alamos National Laboratory; Schmitt, Mark J [Los Alamos National Laboratory; Merrill, Frank E [Los Alamos National Laboratory; Wang, Tai - Sen F [Los Alamos National Laboratory; Danly, Christopher R [Los Alamos National Laboratory; Batha, Steven H [Los Alamos National Laboratory; Patel, M [LLNL; Sepke, S [LLNL; Hatarik, R [LLNL; Fittinghoff, D [LLNL; Bower, D [LLNL; Marinak, M [LLNL; Munro, D [LLNL; Moran, M [LLNL; Hilko, R [NSTEC; Frank, M [LLNL; Buckles, R [NSTEC

2010-01-01T23:59:59.000Z

179

Sizing sliding gate valves for steam service  

SciTech Connect (OSTI)

Sliding gate valves have been used in thousands of applications during the past 40 yr. While steam control is a common application for these valves, thy are also used to control other gases and liquids. The sliding gate design provides straight-through flow, which minimizes turbulence, vibration, and noise. Seats are self-cleaning and self-lapping to provide a tight, long-lasting shutoff. A correctly sized valve is essential for accurate control. Valve size should be determined by service and system requirements, not by the size of the existing pipeline. Sizing a valve on the basis of pipeline size usually results in an oversized valve and poor control. Generally, regulator size is smaller than pipe size. Whenever complete information is known (inlet pressure, outlet pressure, or pressure drop, and required flow), determine the valve flow coefficient (C{sub v}) using the equations in ANSI/ISA S75.01 or a flow sizing chart. Tables of values for various types of valves are available from manufacturers. However, when complete system requirements are not known, valve oversizing is prevented by determining the design capacity of piping downstream from the valve. The valve should not be sized to pass more flow than the maximum amount the pipe can handle at a reasonable velocity. An example calculation is given.

Bollinger, R. [Jordan Value, Cincinnati, OH (United States)

1995-11-06T23:59:59.000Z

180

A p-cell approach to integer gate sizing  

E-Print Network [OSTI]

cell (p-cell) approach to the generation of layouts of standard gates is presented. The use of constant delay model for gate delay estimation is proposed which eliminates the need for maintaining huge volumes of delay tables in the standard cell library...

Doddannagari, Uday

2009-05-15T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS  

E-Print Network [OSTI]

A SIMULATION MODEL FOR FLOATING-GATE MOS SYNAPSE TRANSISTORS Kambiz Rahimi, Chris Diorio, Cecilia, Seattle, Washington ABSTRACT We propose an empirical simulation model for p-channel floating-gate MOS and accurate simulation model for the synaptic devices, many of these circuits were designed using equation

Diorio, Chris

182

University of Illinois at Urbana-Champaigns GATE Center for...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel...

183

University of Illinois at Urbana Champaigns GATE Center forAdvanced...  

Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel...

184

Effects of Ambient Density and Temperature on Soot Formation...  

Broader source: Energy.gov (indexed) [DOE]

(formation and oxidation) * Intake pressure (boost) increases - EGR reduces intake oxygen mole fraction - Compensate by using boost to deliver needed oxygen PM (gkWh) Cooled...

185

Paying the Toll: A Political History of the Golden Gate Bridge and Highway District, 1923-1971  

E-Print Network [OSTI]

Final Environmental Statement Golden Gate Bridge, HighwayGolden Gate Bridge Highway and Transportation District, Draft Environmental

Dyble, Amy Louise Nelson

2003-01-01T23:59:59.000Z

186

Mechanisms for plasma etching of HfO{sub 2} gate stacks with Si selectivity and photoresist trimming  

SciTech Connect (OSTI)

To minimize leakage currents resulting from the thinning of the insulator in the gate stack of field effect transistors, high-dielectric constant (high-k) metal oxides, and HfO{sub 2} in particular, are being implemented as a replacement for SiO{sub 2}. To speed the rate of processing, it is desirable to etch the gate stack (e.g., metal gate, antireflection layers, and dielectric) in a single process while having selectivity to the underlying Si. Plasma etching using Ar/BCl{sub 3}/Cl{sub 2} mixtures effectively etches HfO{sub 2} while having good selectivity to Si. In this article, results from integrated reactor and feature scale modeling of gate-stack etching in Ar/BCl{sub 3}/Cl{sub 2} plasmas, preceded by photoresist trimming in Ar/O{sub 2} plasmas, are discussed. It was found that BCl{sub n} species react with HfO{sub 2}, which under ion impact, form volatile etch products such as B{sub m}OCl{sub n} and HfCl{sub n}. Selectivity to Si is achieved by creating Si-B bonding as a precursor to the deposition of a BCl{sub n} polymer which slows the etch rate relative to HfO{sub 2}. The low ion energies required to achieve this selectivity then challenge one to obtain highly anisotropic profiles in the metal gate portion of the stack. Validation was performed with data from literature. The effect of bias voltage and key reactant probabilities on etch rate, selectivity, and profile are discussed.

Shoeb, Juline; Kushner, Mark J. [Department of Electrical and Computer Engineering, Iowa State University, Ames, Iowa 50011 (United States); Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

2009-11-15T23:59:59.000Z

187

Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer  

SciTech Connect (OSTI)

We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried layer to the surface quantum well can lead to the formation of a nearly immobile surface electron layer. The screening of the remote charges at the interface by this newly formed surface electron layer results in an increase in the mobility of the buried 2DEG. Furthermore, a significant decrease in the minimum mobile electron density of the 2DEG occurs as well. Together, these effects can reduce the increased detrimental effect of interface charges as the setback distance for the 2DEG to the surface is reduced for improved lateral confinement by top gates.

Huang, Chiao-Ti, E-mail: chiaoti@princeton.edu; Li, Jiun-Yun; Chou, Kevin S.; Sturm, James C. [Department of Electrical Engineering, Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544 (United States)

2014-06-16T23:59:59.000Z

188

Gated x-ray detector for the National Ignition Facility  

SciTech Connect (OSTI)

Two new gated x-ray imaging cameras have recently been designed, constructed, and delivered to the National Ignition Facility in Livermore, CA. These gated x-Ray detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significantly different from earlier generations of gated x-ray images due, in part, to an innovative impedance matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring, and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution, and no detectable impedance reflections.

Oertel, John A.; Aragonez, Robert; Archuleta, Tom; Barnes, Cris; Casper, Larry; Fatherley, Valerie; Heinrichs, Todd; King, Robert; Landers, Doug; Lopez, Frank; Sanchez, Phillip; Sandoval, George; Schrank, Lou; Walsh, Peter; Bell, Perry; Brown, Matt; Costa, Robert; Holder, Joe; Montelongo, Sam; Pederson, Neal [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); VI Control Systems Ltd., Los Alamos, New Mexico 87544 (United States)

2006-10-15T23:59:59.000Z

189

An Area Efficien Low Power High Speed S-Box Implementation Using Power-Gated PLA  

E-Print Network [OSTI]

An Area Efficien Low Power High Speed S-Box Implementation Using Power-Gated PLA Ho Joon Lee- sign of Rijndael S-Box for the SubByte transformation using power-gating and PLA design techniques arrays,VLSI General Terms Cryptography, Power Gate, Low Power Keywords AES, PLA, Power Gate, S-Box 1

Ayers, Joseph

190

Parameter Mismatches, Chaos Synchronization and Fast Dynamic Logic Gates  

E-Print Network [OSTI]

By using chaos synchronization between non-identical multiple time delay semiconductor lasers with optoelectronic feedbacks, we demonstrate numerically how fast dynamic logic gates can be constructed. The results may be helpful to obtain a computational hardware with reconfigurable properties.

E. M. Shahverdiev

2009-07-02T23:59:59.000Z

191

Micro-mechanical logic for field produceable gate arrays  

E-Print Network [OSTI]

A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

Prakash, Manu

2005-01-01T23:59:59.000Z

192

Single-Step Implementation of Universal Quantum Gates  

SciTech Connect (OSTI)

We construct optimized implementations of the controlled-NOT and other universal two-qubit gates that, unlike many of the previously proposed protocols, are carried out in a single step. The new protocols require tunable interqubit couplings but, in return, show a significant improvement in the quality of gate operations. We make specific predictions for coupled Josephson junction qubits and compare them with the results of recent experiments.

Grigorenko, I.A.; Khveshchenko, D.V. [Department of Physics and Astronomy, University of North Carolina, Chapel Hill, North Carolina 27599 (United States)

2005-09-09T23:59:59.000Z

193

Rapidly reconfigurable all-optical universal logic gate  

DOE Patents [OSTI]

A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

Goddard, Lynford L. (Hayward, CA); Bond, Tiziana C. (Livermore, CA); Kallman, Jeffrey S. (Pleasanton, CA)

2010-09-07T23:59:59.000Z

194

Ultrafast gating of proximity-focused microchannel-plate intensifiers  

SciTech Connect (OSTI)

Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

Lundy, A.S.; Iverson, A.E.

1982-01-01T23:59:59.000Z

195

Unfamiliar oxidation states and their stabilization  

E-Print Network [OSTI]

ferrate formation. Oxidation of copper(II) hydroxide in alkaline solution with sodium hydroperoxide, Na.OOH, apparently gives copper (III) oxide.8 Determination of the voltage-current curve for a silver anode in sodium hydroxide solution gives breaks... of a knowledge of the chemical prop erties of the substance in question is made apparent by the following illustration: a compound containing silver and oxygen in equal atomic proportions may be made by the oxidation of unipositive silver...

Kleinberg, Jacob

1950-01-01T23:59:59.000Z

196

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network [OSTI]

The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. For cultivating discussions...

Kim, Suk Kyung

2006-10-30T23:59:59.000Z

197

Semiconducting chalcogenide buffer layer for oxide heteroepitaxy on Si,,001...  

E-Print Network [OSTI]

controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide/or silicides at the Si/oxide interface. Subnanometer buffer layers can prevent interface reac- tions while, also enables flexible strain relief. We observe nei- ther oxide nor silicide formation at the buried Si

Olmstead, Marjorie

198

Identification of a reversible quantum gate: assessing the resources  

E-Print Network [OSTI]

We assess the resources needed to identify a reversible quantum gate among a finite set of alternatives, including in our analysis both deterministic and probabilistic strategies. Among the probabilistic strategies we consider unambiguous gate discrimination, where errors are not tolerated but inconclusive outcomes are allowed, and we prove that parallel strategies are sufficient to unambiguously identify the unknown gate with minimum number of queries. This result is used to provide upper and lower bounds on the query complexity and on the minimum ancilla dimension. In addition, we introduce the notion of generalized t-designs, which includes unitary t-designs and group representations as special cases. For gates forming a generalized t-design we give an explicit expression for the maximum probability of correct gate identification and we prove that there is no gap between the performances of deterministic strategies an those of probabilistic strategies. Hence, evaluating of the query complexity of perfect deterministic discrimination is reduced to the easier problem of evaluating the query complexity of unambiguous discrimination. Finally, we consider discrimination strategies where the use of ancillas is forbidden, providing upper bounds on the number of additional queries needed to make up for the lack of entanglement with the ancillas.

Giulio Chiribella; Giacomo Mauro D'Ariano; Martin Roetteler

2014-09-12T23:59:59.000Z

199

Oxidation catalyst  

DOE Patents [OSTI]

The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

2010-11-09T23:59:59.000Z

200

RESEARCH PAPER Phase transition induced formation of hollow structures  

E-Print Network [OSTI]

such as stabilized nano- particles and an oxidation species are usually required to participate in the void formationRESEARCH PAPER Phase transition induced formation of hollow structures in colloidal lanthanide 2009 Ã? Springer Science+Business Media B.V. 2009 Abstract Formation of colloidal hollow structures

Ju, Yiguang

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Self-aligned submicron gate length gallium arsenide MESFET  

E-Print Network [OSTI]

-biaserl saturation currents of 396. 67 + 83. 984 IzA were obtained for the transistors. Built- in voltages of 0. 8198 6 0. 007 V and ideality factors of 1. 456 6 0. 0079 were obtained for the Schottky diodes. The effect of gate length on transcond ictance... Geometrical and physical origins for the small signal equivalent circuit of FET Developed fabrication process for submicron gate length GaAs MESFET Transistor and Schottky diode mask patterns 10 13 15 16 18 19 21 23 23 25 25 32 34 18. Process...

Huang, Hsien-Ching

2012-06-07T23:59:59.000Z

202

Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate  

E-Print Network [OSTI]

Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, Hongpeng

203

E-Print Network 3.0 - alternative gate dielectric Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

poor quality Ge native dielectrics for gate insulator and field... of the optimum ALD HfO on thin Ge oxynitride (GeO N ) gate ... Source: Chui, Chi On - Electrical Engineering...

204

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...  

Energy Savers [EERE]

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence Presentation...

205

Penn State DOE GATE Center of Exellence for In-Vehicle, High...  

Energy Savers [EERE]

Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems...

206

Formation of nano-crystalline todorokite from biogenic Mn Xiong Han Feng a,1  

E-Print Network [OSTI]

Formation of nano-crystalline todorokite from biogenic Mn oxides Xiong Han Feng a,1 , Mengqiang Zhu oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano

Sparks, Donald L.

207

HfO{sub x}N{sub y} gate dielectric on p-GaAs  

SciTech Connect (OSTI)

Plasma nitridation method is used for nitrogen incorporation in HfO{sub 2} based gate dielectrics for future GaAs-based devices. The nitrided HfO{sub 2} (HfO{sub x}N{sub y}) films on p-GaAs improve metal-oxide-semiconductor device characteristics such as interface state density, accumulation capacitance, hysteresis, and leakage current. An equivalent oxide thickness of 3.6 nm and a leakage current density of 10{sup -6} A cm{sup -2} have been achieved at V{sub FB}-1 V for nitrided HfO{sub 2} films. A nitride interfacial layer (GaAsO:N) was observed at HfO{sub 2}-GaAs interface, which can reduce the outdiffusion of elemental Ga and As during post-thermal annealing process. Such suppression of outdiffusion led to a substantial enhancement in the overall dielectric properties of the HfO{sub 2} film.

Dalapati, G. K.; Sridhara, A.; Wong, A. S. W.; Chia, C. K.; Chi, D. Z. [Institute of Materials Research and Engineering, A-STAR - Agency for Science, Technology and Research, 3 Research Link, Singapore 117602 (Singapore)

2009-02-16T23:59:59.000Z

208

Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors  

E-Print Network [OSTI]

-effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

Owen, Man Hon Samuel

2010-11-16T23:59:59.000Z

209

Compressed sensing quantum process tomography for superconducting quantum gates  

E-Print Network [OSTI]

We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

2014-07-03T23:59:59.000Z

210

Quantum phase gate for optical qubits with cavity quantum optomechanics  

E-Print Network [OSTI]

We show that a cavity optomechanical system formed by a mechanical resonator simultaneously coupled to two modes of an optical cavity can be used for the implementation of quantum phase gate between optical qubits associated with the two intracavity modes. The scheme is realizable for sufficiently strong single-photon optomechanical coupling in the resolved sideband regime, and is robust against cavity losses.

Muhammad Asjad; Paolo Tombesi; David Vitali

2015-01-16T23:59:59.000Z

211

ECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography  

E-Print Network [OSTI]

imaging techniques to improve both the safety and the efficacy of coronary angiography interventions the ground for a platform dedicated to the planning and execution of percutaneous coronary inter- ventionsECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography Yining HU, Lizhe XIE

Paris-Sud XI, Université de

212

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect (OSTI)

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

213

An overview of the gate and panel industry  

E-Print Network [OSTI]

acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

Fisher, C. West

2000-01-01T23:59:59.000Z

214

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor  

E-Print Network [OSTI]

The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

Gupta, Kaustubh

2013-07-09T23:59:59.000Z

215

Controlling attosecond electron dynamics by phase-stabilized polarization gating  

E-Print Network [OSTI]

LETTERS Controlling attosecond electron dynamics by phase-stabilized polarization gating I. J. SOLA the signature of a single return of the electron wavepacket over a large range of energies. This temporally (low energy) and cut-off (high energy) harmonics, specific focusing conditions ensure that only

Loss, Daniel

216

Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches  

SciTech Connect (OSTI)

The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

2013-11-25T23:59:59.000Z

217

Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions  

E-Print Network [OSTI]

Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions Leonardo Bobadilla purposely design them to execute wild motions, which means each will strike every open set infinitely often, "wildly behaving" robots that move more-or-less straight until a wall is contacted. They then pick

LaValle, Steven M.

218

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid  

E-Print Network [OSTI]

TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

Najm, Farid N.

219

Mechanism of Selective Oxidation of Propene to Acrolein on Bismuth Molybdates from Quantum Mechanical Calculations  

E-Print Network [OSTI]

Mechanism of Selective Oxidation of Propene to Acrolein on Bismuth Molybdates from Quantum for understanding the fundamental chemical mechanisms underlying the selective oxidation of propene to acrolein to form acrolein, and acrolein desorption. The formation of -allyl intermediate is reversible

Goddard III, William A.

220

E-Print Network 3.0 - anaerobic sulfide oxidation Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

D) Both a and b E... photosynthesis. E) the presence of ozone. 3. Ozone is produced by A) UV light. B) a photochemical oxidation... iron formations are due to A) chemical oxidation...

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Geological sequestration of carbon dioxide by hydrous carbonate formation in steelmaking slag .  

E-Print Network [OSTI]

??"The formation of carbonate solids from the alkaline earth oxide phases in steelmaking slag was investigated in dry and aqueous conditions as a vehicle for… (more)

Rawlins, C. Hank, 1968-

2008-01-01T23:59:59.000Z

222

Utility Formation  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched Ferromagnetism inS-4500II Field EmissionFunctional MaterialsRobertUtility-Formation

223

Formation of Nickel Silicide from Direct-liquid-injection Chemical-vapor-deposited Nickel Nitride Films  

SciTech Connect (OSTI)

Smooth, continuous, and highly conformal nickel nitride (NiN{sub x}) films were deposited by direct liquid injection (DLI)-chemical vapor deposition (CVD) using a solution of bis(N,N{prime}-di-tert-butylacetamidinato)nickel(II) in tetrahydronaphthalene as the nickel (Ni) source and ammonia (NH{sub 3}) as the coreactant gas. The DLI-CVD NiNx films grown on HF-last (100) silicon and on highly doped polysilicon substrates served as the intermediate for subsequent conversion into nickel silicide (NiSi), which is a key material for source, drain, and gate contacts in microelectronic devices. Rapid thermal annealing in the forming gas of DLI-CVD NiNx films formed continuous NiSi films at temperatures above 400 C. The resistivity of the NiSi films was 15{mu}{Omega} cm, close to the value for bulk crystals. The NiSi films have remarkably smooth and sharp interfaces with underlying Si substrates, thereby producing contacts for transistors with a higher drive current and a lower junction leakage. Resistivity and synchrotron X-ray diffraction in real-time during annealing of NiNx films showed the formation of a NiSi film at about 440 C, which is morphologically stable up to about 650 C. These NiSi films could find applications in future nanoscale complementary metal oxide semiconductor devices or three-dimensional metal-oxide-semiconductor devices such as Fin-type field effect transistors for the 22 nm technology node and beyond.

Li, Z.; Gordon, R; Li, H; Shenai, D; Lavoie, C

2010-01-01T23:59:59.000Z

224

A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation  

SciTech Connect (OSTI)

Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

2012-03-15T23:59:59.000Z

225

Oxidation Characteristics of Fe-18Cr-18Mn-stainless alloys  

SciTech Connect (OSTI)

Air oxidation studies of Fe-18Cr-18Mn stainless steels were conducted at 525°C, 625°C, and 725°C. Alloys were evaluated with respect to changes in oxidation properties as a result of interstitial additions of nitrogen and carbon and of minor solute additions of silicon, molybdenum, and nickel. Interstitial concentrations possibly had a small, positive effect on oxidation resistance. Minor solute additions significantly improved oxidation resistance but could also reduce interstitial solubility resulting in formation of chromium carbides. Loss of solute chromium resulted in a slight reduction in oxidation protection. Oxidation lasting over 500 hours produced a manganese rich, duplex oxide structure: an outer sesquioxide and an inner spinel oxide.

James Rawers

2010-10-01T23:59:59.000Z

226

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons  

DOE Patents [OSTI]

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons is carried out over metal vanadate catalysts under oxidizing conditions. The vanadate catalysts are represented by the formulas M[sub 3](VO[sub 4])[sub 2] and MV[sub 2]O[sub 6], M representing Mg, Zn, Ca, Pb, or Cd. The reaction is carried out in the presence of oxygen, but the formation of oxygenate by-products is suppressed.

Kung, H.H.; Chaar, M.A.

1988-10-11T23:59:59.000Z

227

Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF  

E-Print Network [OSTI]

and operations are listed and illustrated through their application to the Thames Flood Barrier gates

Bowles, David S.

228

THE GROWTH MECHANISMS OF ULTRATHIN GATE DIELECTRICS ON SILICON  

E-Print Network [OSTI]

in the passive oxidation regime, while etching in the active oxidation regime made the surface slightly rougher. A roughening regime is also observed in between the active and passive oxidation regimes and causes, I was fortunate to share a house with Alex See, from whom Qing-Tang heard about me and recruited me

Gustafsson, Torgny

229

Fast and reliable automated ventriculography for gated blood-pool studies  

SciTech Connect (OSTI)

A set of algorithms, requiring only one single operator-interaction and minimal running time, has been generated to analyze left-ventricular function from cardiac gated Tc-99m Blood-pool Nuclear Medicine scintigrams (CBPS). The process depends mainly on an optimal edge enhancement filter derived in the frequency domain and applied to the study via FFT. The bandpass filter is based on Prolate Spheroidal wave functions and was described by Shanmugam et al in 1979. It maximizes output in the vicinity of edges, and is adapted here to enhance the ventricular region of interest (ROI) yielding images with sharp edges and good signal-to-noise ratio (SNR). This procedure does not require previous background subtraction from initial images in order to adequately define left-ventricular contours. A filter format has been chosen which will allow successful performance of the technique over a wide range of CBPS. The filtered image is then scanned and, on the original frame edges around ROI are marked and counts within ROI are defined. It will automatically run for any allowed number or size of frames. Processing time averages less than one minute when employing an Array Processor for a set of 32 64x64 pixel frames. Nuclear Medicine image processing applications of such filter have not been reported to date. This process has been tested on variable rate, variable ejection fraction, known volume Vanderbilt cardiac phantom; with maximum deviation of 3.5% and estimated standard deviation (SD) of 1.7%. When compared to other processes currently available, this technique is clearly more reliable due to its accuracy, speed and simplicity. It has also been used to determine ventricular volumes from gated SPECT images, with a respectable SD of 2.8%.

Lima, M.G.

1984-01-01T23:59:59.000Z

230

Project Profile: High Performance Reduction/Oxidation Metal Oxides...  

Office of Environmental Management (EM)

High Performance ReductionOxidation Metal Oxides for Thermochemical Energy Storage Project Profile: High Performance ReductionOxidation Metal Oxides for Thermochemical Energy...

231

Improved phase gate reliability in systems with neutral Ising anyons  

E-Print Network [OSTI]

Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain Ising anyons and share the feature of having only neutral edge excitations. In this note, we show that these proposals can be combined with the recently proposed "sack geometry" for implementation of a phase gate in order to conduct robust universal quantum computation. In addition, we propose a general method for adjusting edge tunneling rates in such systems, which is necessary for the control of interferometric devices. The error rate for the phase gate in neutral Ising systems is parametrically smaller than for a similar geometry in which the edge modes carry charge: it goes as $T^3$ rather than $T$ at low temperatures. At zero temperature, the phase variance becomes constant at long times rather than carrying a logarithmic divergence.

David J. Clarke; Kirill Shtengel

2010-09-01T23:59:59.000Z

232

Photon-photon gates in Bose-Einstein condensates  

E-Print Network [OSTI]

It has recently been shown that light can be stored in Bose-Einstein condensates for over a second. Here we propose a method for realizing a controlled phase gate between two stored photons. The photons are both stored in the ground state of the effective trapping potential inside the condensate. The collision-induced interaction is enhanced by adiabatically increasing the trapping frequency and by using a Feshbach resonance. A controlled phase shift of $\\pi$ can be achieved in one second.

Arnaud Rispe; Bing He; Christoph Simon

2010-09-30T23:59:59.000Z

233

GATE Center for Automotive Fuel Cell Systems at Virginia Tech  

SciTech Connect (OSTI)

The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: â?¢ Expanded and updated fuel cell and vehicle technologies education programs; â?¢ Conducted industry directed research in three thrust areas â?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; â?¢ Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; â?¢ Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Techâ??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

Douglas Nelson

2011-05-31T23:59:59.000Z

234

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

SciTech Connect (OSTI)

The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

2009-08-11T23:59:59.000Z

235

Nanoengineered Thin Films for Solid Oxide Fuel Cells  

E-Print Network [OSTI]

Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

Su, Qing

2013-11-21T23:59:59.000Z

236

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

237

Method for formation of thin film transistors on plastic substrates  

DOE Patents [OSTI]

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

1998-10-06T23:59:59.000Z

238

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network [OSTI]

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

Jin, Xin

2012-07-16T23:59:59.000Z

239

Formulation and method for preparing gels comprising hydrous hafnium oxide  

DOE Patents [OSTI]

Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

2013-08-06T23:59:59.000Z

240

Formulation and method for preparing gels comprising hydrous cerium oxide  

DOE Patents [OSTI]

Formulations useful for preparing hydrous cerium oxide gels contain a metal salt including cerium, an organic base, and a complexing agent. Methods for preparing gels containing hydrous cerium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including cerium, an organic base, and a complexing agent.

Collins, Jack L; Chi, Anthony

2013-05-07T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Formulation and method for preparing gels comprising hydrous aluminum oxide  

SciTech Connect (OSTI)

Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

Collins, Jack L.

2014-06-17T23:59:59.000Z

242

The catalytic oxidation of propylene: investigation of catalyst activity.  

E-Print Network [OSTI]

- thur oxidation resulted in the formation oi' dioxymsthylperoxides acetalde- hydes formic aoids carbon monoxide, carbon dioxide~ hydrogen and water, &t temperatures above 500 degrees Centigrade the polymer1sation of eth- ylene became significant... that water vapor exerted a catalytio effeot on the oxidation of ethylene, while carbon dioxide showed no aooelerating effeot. Davis (ll) observed that water vapor possessed a oatalytio ei'- feet on ths oxidation of olefins. Thompson and Hinshslwood (SS...

Woodham, John Frank

1953-01-01T23:59:59.000Z

243

Synthesis of zirconium oxide nanoparticle by sol-gel technique  

SciTech Connect (OSTI)

Zirconium oxide nanoparticle is synthesized using sol-gel technique. Various mole ratio of ammonia solution and nitric acid relative to zirconium propoxide is added in the reaction to study the effect on the crystallinity and particle size on zirconium oxide particle. Zirconium oxide synthesized with nitric acid have the smallest particle size under FESEM image and show the increasing formation of crystalline tetragonal phase under XRD diffractogram.

Lim, H. S.; Ahmad, A.; Hamzah, H. [School of Chemical Science and Food Technology, Faculty of Science and Technology, National University of Malaysia, 43600 Bangi (Malaysia)

2013-11-27T23:59:59.000Z

244

Simple trapped-ion architecture for high-fidelity Toffoli gates  

SciTech Connect (OSTI)

We discuss a simple architecture for a quantum toffoli gate implemented using three trapped ions. The gate, which, in principle, can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating, and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

Borrelli, Massimo [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Mazzola, Laura [Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland); School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Paternostro, Mauro [School of Mathematics and Physics, Queen's University, BT7 1NN Belfast (United Kingdom); Maniscalco, Sabrina [CM-DTC, SUPA, EPS/School of Engineering and Physical Sciences, Heriot-Watt University, Edinburgh EH14 4AS (United Kingdom); Turku Centre for Quantum Physics, Department of Physics and Astronomy, University of Turku, FI-20014 Turun yliopisto (Finland)

2011-07-15T23:59:59.000Z

245

Ni-Pt Silicide Formation Through Ti Mediating Layers  

SciTech Connect (OSTI)

With Ni1-xPtxSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on the Si substrate prior to Ni-Pt deposition that can affect the formation of Ni1-xPtxSi and its texture. In this manuscript, it will be shown that an extended queue time prior to Ni-Pt deposition leads to morphological changes in the Ni1-xPtxSi formation sequence. A layer of Ti deposited between Ni-Pt and Si reduces the native oxide and may facilitate Ni1-xPtxSi formation. With increasing Ti thickness, the presence of metal-rich phases is gradually reduced and the formation temperature of Ni1-xPtxSi increases, suggesting a direct formation of Ni1-xPtxSi from Ni-Pt. In the presence of an interfacial oxide, an increase in formation temperature is also observed with increasing Ti interlayer thickness. When the Ti layer is sufficiently thick, the phase formation sequence becomes relatively insensitive to the presence of an interfacial oxide or extended queue time.

Besser,P.; Lavoie, C.; Ozcan, A.; Murray, C.; Strane, J.; Wong, K.; Gribelyuk, M.; Wang, Y.; Parks, C.; Jordan-Sweet, J.

2007-01-01T23:59:59.000Z

246

Hydrous metal oxide catalysts for oxidation of hydrocarbons  

SciTech Connect (OSTI)

This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

Miller, J.E.; Dosch, R.G.; McLaughlin, L.I. [Sandia National Labs., Albuquerque, NM (United States). Process Research Dept.

1993-07-01T23:59:59.000Z

247

Nitrogen oxide abatement by distributed fuel addition  

SciTech Connect (OSTI)

A combustor has been designed in order to retard the formation of nitrogen oxides by injection of reburning fuel. The design and the rebuilding of the new combustor was completed. Several new features were incorporated in the new design so that it would last longer. The design and construction of the furnace are discussed in this report. (VC)

Wendt, J.O.L.; Mereb, J.B.

1989-06-20T23:59:59.000Z

248

Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape  

Broader source: Energy.gov [DOE]

Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

249

Locally observable conditions for the successful implementation of entangling multi-qubit quantum gates  

E-Print Network [OSTI]

The information obtained from the operation of a quantum gate on only two complementary sets of input states is sufficient to estimate the quantum process fidelity of the gate. In the case of entangling gates, these conditions can be used to predict the multi qubit entanglement capability from the fidelities of two non-entangling local operations. It is then possible to predict highly non-classical features of the gate such as violations of local realism from the fidelities of two completely classical input-output relations, without generating any actual entanglement.

Holger F. Hofmann; Ryo Okamoto; Shigeki Takeuchi

2005-09-01T23:59:59.000Z

250

Rapid optimization of working parameters of microwave-driven multilevel qubits for minimal gate leakage  

E-Print Network [OSTI]

.0134 is the interaction between the qubits, .0020 .0136 M=L is the coupling constant, and x i , x ei , and h.0133x i .0134 (i .0136 1 and 2) are the canonical coordinate, normal- ized external flux, and Hamiltonian of the ith single qubit. Note... for the gate at the point B. The quality of a gate can be described by gate fidelity F .0017 Trace.0137.0026 P .0026 I .0138, where .0026 P and.0026 I are the physical and ideal density matrices after gate operation and the overline denotes averaging over all...

Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

2005-09-16T23:59:59.000Z

251

Use of high-level design information for enabling automation of fine-grained power gating  

E-Print Network [OSTI]

Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

Agarwal, Abhinav

2014-01-01T23:59:59.000Z

252

Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses  

E-Print Network [OSTI]

The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times (Langer et al., 2005), high qubit measurement fidelity (Noek et al., 2013), and universal logic gates (Home et al., 2009). The quality of quantum logic gate operations on trapped ion qubits has been limited by the stability of the control fields at the ion location used to implement the gate operations. For this reason, the logic gates utilizing microwave fields (Brown et al., 2011; Shappert et al., 2013; Harty et al., 2014) have shown gate fidelities several orders of magnitude better than those using laser fields (Knill et al., 2008; Benhelm et al., 2008; Ballance et al., 2014). Here, we demonstrate low-error single-qubit gates performed using stimulated Raman transitions on an ion qubit trapped in a microfabricated chip trap. Gate errors are measured using a randomized benchmarking protocol (Knill et al., 2008; Wallman et al., 2014; Magesan et al., 2012), where amplitude error in the control beam is compensated using various pulse sequence techniques (Wimperis, 1994; Low et al., 2014). Using B2 compensation (Wimperis, 1994), we demonstrate single qubit gates with an average error per randomized Clifford group gate of $3.6(3)\\times10^{-4}$. We also show that compact palindromic pulse compensation sequences (PD$n$) (Low et al., 2014) compensate for amplitude errors as designed.

Emily Mount; Chingiz Kabytayev; Stephen Crain; Robin Harper; So-Young Baek; Geert Vrijsen; Steven Flammia; Kenneth R. Brown; Peter Maunz; Jungsang Kim

2015-04-06T23:59:59.000Z

253

2006-2010 GATE program at Ohio State University Center for Automotive...  

Broader source: Energy.gov (indexed) [DOE]

DOE Office of Vehicle Technologies "Mega" Merit Review 2008 on February 25, 2008 in Bethesda, Maryland. merit08guezennec.pdf More Documents & Publications GATE: Energy Efficient...

254

L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer  

SciTech Connect (OSTI)

In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

2014-04-21T23:59:59.000Z

255

Copper-mediated LDL oxidation by homocysteine and related compounds depends largely on copper ligation  

E-Print Network [OSTI]

Copper-mediated LDL oxidation by homocysteine and related compounds depends largely on copper of copper-mediated LDL oxidation (initiation, conjugated diene formation and aldehyde formation), whereas at high concentration, it acts as an antioxidant. The affinity for copper of homocysteine and related

Williamson, Mike P.

256

Three-qubit phase gate based on cavity quantum electrodynamics  

E-Print Network [OSTI]

- mentation, such as linear ion traps #4;1#5;, liquid-state nuclear magnetic resonance #1;NMR#2; #4;2#5;, and cavity QED systems #4;3,4#5;. There are three requirements for implementing a quantum computer: Efficient manipulation and read out of an indi.... #4;6#5;, a scheme to implement a two-qubit quantum phase gate and one-qubit unitary operation implementation based on cavity QED was described. They choose the Fock states #6;0#7; and #6;1#7; of a high Q cavity mode as the two logical states of a...

Chang, Jun-Tao; Zubairy, M. Suhail

2008-01-01T23:59:59.000Z

257

Gate Hours & Services | Stanford Synchrotron Radiation Lightsource  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc DocumentationP-SeriesFlickr Flickr Editor'sshort version) Thelong version)shortGate Hours &

258

Start | Author Index 742-1 Methylarsenate Sorption to Aluminum Oxide.  

E-Print Network [OSTI]

Start | Author Index 742-1 Methylarsenate Sorption to Aluminum Oxide. Wednesday, 8 October 2008: 1 is to investigate MMA and DMA sorption behavior to aluminum oxide employing a multi-scale approach. Macroscopic) spectroscopic studies to examine sorption complex formation between methylarsenate and aluminum oxide. See more

Sparks, Donald L.

259

Cu- and Ag-modified cerium oxide catalysts for methane oxidation  

SciTech Connect (OSTI)

The catalytic activity of nanocrystalline doped ceria and Cu- and Ag-modified ceria for the complete oxidation of methane was studied in this work. The catalyst structure was studied by X-ray diffraction (XRD) and related to the availability of low-temperature oxygen species. Selected samples were also analyzed by STEM/EDX, HRTEM, and XPS. Temperature-programmed reduction (TPR) by H{sub 2} and CH{sub 4}, as well as oxygen chemisorption, measurements were used to characterize the different oxygen species present on the catalyst. La and Zr were used as dopants to modify the crystal size and reduction properties of ceria. Enhanced activity for the complete oxidation of methane is discussed in terms of ceria reducibility, crystal size, and formation of oxygen defects at the surface (extrinsic oxygen vacancies). Addition of transition metal oxides (CuO) or transition metals (Ag) improves the low-temperature oxidation activity of cerium oxide. The interaction of ceria with Ag and CuO is a strong function of the crystal size of ceria. In the presence of the transition metal or metal oxide, a small crystal size of ceria favors the formation of highly reducible oxygen species and enhances the methane oxidation activity.

Kundakovic, L.; Flytzani-Stephanopoulis, M. [Tufts Univ., Medford, MA (United States). Dept. of Chemical Engineering] [Tufts Univ., Medford, MA (United States). Dept. of Chemical Engineering

1998-10-01T23:59:59.000Z

260

Photo-oxidation catalysts  

DOE Patents [OSTI]

Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

2009-07-14T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional  

E-Print Network [OSTI]

We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

2009-05-21T23:59:59.000Z

262

Coherent molecular transistor: Control through variation of the gate wave function  

SciTech Connect (OSTI)

In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)] [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)

2014-03-21T23:59:59.000Z

263

Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1  

E-Print Network [OSTI]

Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1 RELIABILITY ASSESSMENT FOR A SPILLWAY GATE UPGRADE DESIGN IN QUEENSLAND, AUSTRALIA Malcolm of reliability analysis, and how the results influenced the spillway system design and overall risk evaluation

Bowles, David S.

264

Controlling the Performance of a Three-Terminal Molecular Transistor: Conformational versus Conventional Gating  

E-Print Network [OSTI]

University, Houghton, Michigan 49931, United States Shashi P. Karna* U.S. Army Research Laboratory, Weapons *S Supporting Information ABSTRACT: The effect of conformational changes in the gate arm of a three of the gate field. The current modulation is found to reach its maximum only under exclusive effect of voltage

Pandey, Ravi

265

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto  

E-Print Network [OSTI]

Ambipolar silicon nanowire FETs with stenciled-deposited metal gate Davide Sacchetto , Veronica Keywords: Schottky barrier Ambipolarity Si nanowire Stencil lithography FET Silicide a b s t r a c t We chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning

De Micheli, Giovanni

266

Probabilistic quantum gates between remote atoms through interference of optical frequency qubits  

E-Print Network [OSTI]

Probabilistic quantum gates between remote atoms through interference of optical frequency qubits L gates on remote trapped atom qubits through interference of optical frequency qubits. The method does be localized well under the Lamb-Dicke limit through laser cooling in a strong trap, the elimination

Madsen, Martin John

267

Directions to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North  

E-Print Network [OSTI]

on Vermont Avenue Turn right at 36th Place/Downey Way and enter USC at Gate 6 5 (Golden State/Santa AnaDirections to USC, Gate 6 (Parking Structure A) 110 (Harbor Freeway) North Take the Exposition Boulevard exit Go straight through the 37th Street light. Keep left Go under the freeway bridge and across

Valero-Cuevas, Francisco

268

Efficient polarization gating of high-order harmonic generation by polarization-shaped ultrashort pulses  

E-Print Network [OSTI]

Polarization gating of high-order harmonic generation takes advantage of the significant reduction of har for generation of polarization gated pulses using wave-plate combinations is inefficient, and propose photon energy radiation from the harmonic spectrum. Need- less to say, the generation of near single

Silberberg, Yaron

269

Electrochemical gating of individual single-wall carbon nanotubes observed by electron transport measurements and resonant  

E-Print Network [OSTI]

, the Fermi energy of a nanotube can be changed, as ions from the solution accu- mulate on the surface gating of nanotubes has been shown previously to effectively shift the Fermi energy of semiconducting with the laser energy, we can observe the Raman spectrum from a single SWNT.7 Electrochemical gating of nanotubes

270

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET)  

E-Print Network [OSTI]

New Silicon Carbide Schottky-gate Bipolar Mode Field Effect Transistor (SiC SBMFET) without PN. In this paper, we propose a novel Schottky-gate BMFET (SBMFET) using P- type 4H Silicon-Carbide 13,41, a wide, Silicon Carbide, Field effect transistor, Simulation. I. INTRODUCTION TH E BMFET operates in bipolar mode

Kumar, M. Jagadesh

271

Optimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa Balakrishnan  

E-Print Network [OSTI]

at Boston's Logan International Airport in the US are used to illustrate the advantages of the proposed for Boston Logan International Airport (BOS) is shown in Fig. 1. Gates at each of the four main terminalsOptimal Control of Airport Operations with Gate Capacity Constraints Harshad Khadilkar and Hamsa

Gummadi, Ramakrishna

272

Classification : Original Article VOLTAGE-GATED SODIUM CHANNELS POTENTIATE THE INVASIVE  

E-Print Network [OSTI]

- gated sodium channels in non-small-cell lung cancer cell lines. Functional voltage-gated sodium channels cancerous cell lines H23, H460 and Calu-1 possess functional sodium channels while normal and weakly metastatic cell lines do not. While all the cell lines expressed mRNA for numerous sodium channel isoforms

Boyer, Edmond

273

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*  

E-Print Network [OSTI]

Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

Beebe, David J.

274

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1  

E-Print Network [OSTI]

Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

Shepard, Kenneth

275

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip  

E-Print Network [OSTI]

Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate transformer integrated in a CMOS silicon die together with the gate driver and other required functions frequency through the coreless transformer. The chosen design methodology will be explained and experimental

Paris-Sud XI, Université de

276

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents [OSTI]

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

277

Oxidation of propylene over copper oxide catalysts  

E-Print Network [OSTI]

work on other phases of this project concerning cata- lytic oxidation of hydrocarbons has been described by Sanderson (59), Looney (34), Burns (11), Dunlop (17), Woodham (71), and Perkins (49). The early work of Sanderson indicated that chromia-alumina... and pro- moted chromia?alumina agents possessed the ability to catalyze the oxidation of propane by air. Subsequent work of Looney suggested that propylene was a primary product of this oxidation; hence most investigations since then have been confined...

Billingsley, David Stuart

1958-01-01T23:59:59.000Z

278

Cerium Oxide Coating for Oxidation Reduction  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Award In order to produce power more efficiently and cleanly, the next generation of power plant boilers, turbines, solid oxide fuel cells (SOFCs) and other essential...

279

Analytical approach to swift non-leaky entangling gates in superconducting qubits  

E-Print Network [OSTI]

We develop schemes for designing pulses that implement fast and precise entangling quantum gates in superconducting qubit systems despite the presence of nearby harmful transitions. Our approach is based on purposely involving the nearest harmful transition in the quantum evolution instead of trying to avoid it. Using analytical tools, we design simple microwave control fields that implement maximally entangling gates with fidelities exceeding 99% in times as low as 40 ns. We demonstrate our approach in a two-qubit circuit QED system by designing the two most important quantum entangling gates: a conditional-NOT gate and a conditional-Z gate. Our results constitute an important step toward overcoming the problem of spectral crowding, one of the primary challenges in controlling multi-qubit systems.

Sophia E. Economou; Edwin Barnes

2014-11-03T23:59:59.000Z

280

A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity  

SciTech Connect (OSTI)

A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: •A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. •Three- and two-qubit operations are generated via a classical field with the flux. •Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

Obada, A.-S.F. [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt)] [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt); Hessian, H.A. [Faculty of Science, Assiut University, Assiut (Egypt)] [Faculty of Science, Assiut University, Assiut (Egypt); Mohamed, A.-B.A. [Faculty of Science, Assiut University, Assiut (Egypt) [Faculty of Science, Assiut University, Assiut (Egypt); Community College, Salman Bin Abdulaziz University, Al-Aflaj (Saudi Arabia); Homid, Ali H., E-mail: alihimad@yahoo.com [Faculty of Science, Al-Azhar University, Assiut (Egypt)

2013-07-15T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Experimental Estimation of Average Fidelity of a Clifford Gate on a 7-qubit Quantum Processor  

E-Print Network [OSTI]

Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating the average fidelity of Clifford gates, to certify a 7-qubit entangling gate in a nuclear magnetic resonance quantum processor. Compared with more than $10^8$ experiments required by full process tomography, we conducted 1656 experiments to satisfy a statistical confidence level of 99%. The average fidelity of this Clifford gate in experiment is 55.1%, and rises to 87.5% if the infidelity due to decoherence is removed. The entire protocol of certifying Clifford gates is efficient and scalable, and can easily be extended to any general quantum information processor with minor modifications.

Dawei Lu; Hang Li; Denis-Alexandre Trottier; Jun Li; Aharon Brodutch; Anthony P. Krismanich; Ahmad Ghavami; Gary I. Dmitrienko; Guilu Long; Jonathan Baugh; Raymond Laflamme

2014-11-28T23:59:59.000Z

282

A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates  

E-Print Network [OSTI]

This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition...

Islam, Kazi Inamul

1995-01-01T23:59:59.000Z

283

Creating fluid injectivity in tar sands formations  

DOE Patents [OSTI]

Methods for treating a tar sands formation are described herein. Methods for treating a tar sands may include heating a portion of a hydrocarbon layer in the formation from one or more heaters located in the portion. The heat may be controlled to increase the permeability of at least part of the portion to create an injection zone in the portion with an average permeability sufficient to allow injection of a fluid through the injection zone. A drive fluid and/or an oxidizing fluid may be provided into the injection zone. At least some hydrocarbons including mobilized hydrocarbons are produced from the portion.

Stegemeier, George Leo; Beer, Gary Lee; Zhang, Etuan

2012-06-05T23:59:59.000Z

284

Creating fluid injectivity in tar sands formations  

DOE Patents [OSTI]

Methods for treating a tar sands formation are described herein. Methods for treating a tar sands may include heating a portion of a hydrocarbon layer in the formation from one or more heaters located in the portion. The heat may be controlled to increase the permeability of at least part of the portion to create an injection zone in the portion with an average permeability sufficient to allow injection of a fluid through the injection zone. A drive fluid and/or an oxidizing fluid may be provided into the injection zone. At least some hydrocarbons are produced from the portion.

Stegemeier, George Leo; Beer, Gary Lee; Zhang, Etuan

2010-06-08T23:59:59.000Z

285

After-gate attack on a quantum cryptosystem  

E-Print Network [OSTI]

We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack.

Carlos Wiechers; Lars Lydersen; Christoffer Wittmann; Dominique Elser; Johannes Skaar; Christoph Marquardt; Vadim Makarov; Gerd Leuchs

2010-09-14T23:59:59.000Z

286

Electrically-gated near-field radiative thermal transistor  

E-Print Network [OSTI]

In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene sheets function as the "gate" to modulate the near-field photon tunneling by tuning chemical potential with applied voltage biases symmetrically or asymmetrically. The radiative heat flux calculated from fluctuational electrodynamics significantly varies with graphene chemical potentials, which can tune the coupling between graphene plasmon across the vacuum gap. Thermal modulation, switching, and amplification, which are the key features required for a thermal transistor, are theoretically realized and analyzed. This work will pave the way to active thermal management, thermal circuits, and thermal computing.

Yang, Yue

2015-01-01T23:59:59.000Z

287

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents [OSTI]

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

Benson, D.K.; Potter, T.F.

1994-06-07T23:59:59.000Z

288

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents [OSTI]

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

1994-06-07T23:59:59.000Z

289

NETL Report format template  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

NGCC Natural gas combined cycle NOx Oxides of nitrogen PC Sub Pulverized coal subcritical PC Sup Pulverized coal supercritical PM Particulate matter SO 2 Sulfur dioxide...

290

Demonstration of a fully tuneable entangling gate for continuous-variable one-way quantum computation  

E-Print Network [OSTI]

We introduce a fully tuneable entangling gate for continuous-variable one-way quantum computation. We present a proof-of-principle demonstration by propagating two independent optical inputs through a three-mode linear cluster state and applying the gate in various regimes. The genuine quantum nature of the gate is confirmed by verifying the entanglement strength in the output state. Our protocol can be readily incorporated into efficient multi-mode interaction operations in the context of large-scale one-way quantum computation, as our tuning process is the generalisation of cluster state shaping.

Shota Yokoyama; Ryuji Ukai; Seiji C. Armstrong; Jun-ichi Yoshikawa; Peter van Loock; Akira Furusawa

2014-10-02T23:59:59.000Z

291

Stripline microchannel plate image intensifier tubes (MCPTS) for nanosecond optical gating applications  

SciTech Connect (OSTI)

Shuttering characteristics of low impedance stripline geometry microchannel plate image intensifier tubes (MCPTs) with 50% transmissive nickel undercoated S-20 photocathodes are discussed. Iris-free shutter sequences with 50 to 75 micron resolution at optical gate times of 500ps to 2ns were measured for typical samples from two manufacturers. Shutter sequences clearly showing gate pulse propagation velocities for this MCPT design when externally driven by impedance matched circuitry are contrasted with non-directional sequences obtained from unmatched coupling of the gate pulse. 7 refs., 7 figs.

Yates, G.J.; Jaramillo, S.A.; Zagarino, P.; Thomas, M.

1986-01-01T23:59:59.000Z

292

Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene  

E-Print Network [OSTI]

Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

2011-04-22T23:59:59.000Z

293

Repeat-until-success cubic phase gate for universal continuous-variable quantum computation  

E-Print Network [OSTI]

In order to achieve universal quantum computation using continuous variables, one needs to jump out of the set of Gaussian operations and have a non-Gaussian element, such as the cubic phase gate. However, such a gate is currently very difficult to implement in practice. Here we introduce an experimentally viable 'repeat-until-success' approach to generating the cubic phase gate, which is achieved using sequential photon subtractions and Gaussian operations. We find that our scheme offers benefits in terms of the expected time until success, although we require a primitive quantum memory.

Kevin Marshall; Raphael Pooser; George Siopsis; Christian Weedbrook

2014-12-01T23:59:59.000Z

294

Water-induced Formation of Cobalt Oxides Over Supported  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmosphericNuclear SecurityTensile Strain Switched FerromagnetismWaste and Materials Disposition3 WaterFebruary 18, 2014 B O

295

Formation of zinc oxide films using submicron zinc particle dispersions. |  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation ProposedUsing ZirconiaPolicyFeasibilityFieldMinds" Give formsingle-phase BaOEMSL zinc

296

THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR  

E-Print Network [OSTI]

OXIDE PHASE IN A ZINC OXIDE VARISTOR MICROSI'RUCTIJRALMETAL OXIDE PHASE IN A ZINC OXIDE VARISTOR David R. Clarke

Clarke, D. E

2011-01-01T23:59:59.000Z

297

Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10?nm devices  

SciTech Connect (OSTI)

Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10?nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10?nm regime.

Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L. [Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

2014-08-28T23:59:59.000Z

298

SRP4760R List of Lots By Purchaser As at :-13-feb-2013:08:07 CENTRAL ENGLAND (Wharncliffe Plank Gate)  

E-Print Network [OSTI]

ENGLAND (Wharncliffe Plank Gate) CENTRAL ENGLAND (Coach Road) NORTH ENGLAND (Guns Crag (Redesdale)) NORTH

299

Selective Electrocatalytic Activity of Ligand Stabilized Copper Oxide Nanoparticles  

SciTech Connect (OSTI)

Ligand stabilization can influence the surface chemistry of Cu oxide nanoparticles (NPs) and provide unique product distributions for electrocatalytic methanol (MeOH) oxidation and CO{sub 2} reduction reactions. Oleic acid (OA) stabilized Cu{sub 2}O and CuO NPs promote the MeOH oxidation reaction with 88% and 99.97% selective HCOH formation, respectively. Alternatively, CO{sub 2} is the only reaction product detected for bulk Cu oxides and Cu oxide NPs with no ligands or weakly interacting ligands. We also demonstrate that OA stabilized Cu oxide NPs can reduce CO{sub 2} into CO with a {approx}1.7-fold increase in CO/H{sub 2} production ratios compared to bulk Cu oxides. The OA stabilized Cu oxide NPs also show 7.6 and 9.1-fold increases in CO/H{sub 2} production ratios compared to weakly stabilized and non-stabilized Cu oxide NPs, respectively. Our data illustrates that the presence and type of surface ligand can substantially influence the catalytic product selectivity of Cu oxide NPs.

Kauffman, Douglas R.; Ohodnicki, Paul R.; Kail, Brian W; Matranga, Christopher

2011-01-01T23:59:59.000Z

300

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide  

E-Print Network [OSTI]

Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

Kim, Sehun

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Formatted: Footer, Left Formatted: Font: 10 pt  

E-Print Network [OSTI]

Formatted: Space Before: 12 pt, Border: Bottom: (Single solid line, Auto, 0.5 pt Line width) Deleted: Angelis ­ Sacramento Municipal Utility District Anne Gillette ­ California Public Utilities Commission Steven Kelly

302

A linear programming solution to the gate assignment problem at airport terminals  

E-Print Network [OSTI]

This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

Mangoubi, Rami

1980-01-01T23:59:59.000Z

303

E-Print Network 3.0 - arbitrary phase gates Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

<< < 1 2 3 4 5 > >> Page: << < 1 2 3 4 5 > >> 41 Optical simulation of quantum logic N. J. Cerf,1 Summary: of universal quantum gates using simple optical components beam...

304

The civic forum in ancient Israel : the form, function, and symbolism of city gates  

E-Print Network [OSTI]

of City Gates by Daniel Allan Frese Doctor of Philosophy inC. Michael Hall, and Allan M. Williams. Oxford: Blackwell,in History by Daniel Allan Frese Committee in Charge:

Frese, Daniel Allan

2012-01-01T23:59:59.000Z

305

All-Optical Switch and Transistor Gated by One Stored Photon  

E-Print Network [OSTI]

The realization of an all-optical transistor, in which one “gate” photon controls a “source” light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical ...

Chen, Wenlan

306

E-Print Network 3.0 - affects voltage-gated calcium Sample Search...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

, 1115-1118 3 Dolphin, A.C. (2003) b subunits of voltage-gated calcium channels. J. Bioenerg. Biomembr... . 35, 599-620 4 Van Petegem, F. et al. (2004) Structure of a complex...

307

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M.; Zhou, Hong-Cai (TAM); (U. Amsterdam)

2010-10-22T23:59:59.000Z

308

Thermosensitive gating effect and selective gas adsorption in a porous coordination nanocage  

SciTech Connect (OSTI)

A porous coordination nanocage functionalized with 24 triisopropylsilyl groups exhibits a remarkable thermosensitive gate opening phenomenon and demonstrates a molecular sieving effect at a certain temperature range, which can be used for gas separation purposes.

Zhao, Dan; Yuan, Daqiang; Krishna, Rajamani; van Baten, Jasper M; Zhou, Hong-Cai

2010-01-01T23:59:59.000Z

309

Process fidelity estimation of linear optical quantum CZ gate: A comparative study  

E-Print Network [OSTI]

We present a systematic comparison of different methods of fidelity estimation of a linear optical quantum controlled-Z gate implemented by two-photon interference on a partially polarizing beam splitter. We have utilized a linear fidelity estimator based on the Monte Carlo sampling technique as well as a non-linear estimator based on maximum likelihood reconstruction of a full quantum process matrix. In addition, we have also evaluated lower bound on quantum gate fidelity determined by average quantum state fidelities for two mutually unbiased bases. In order to probe various regimes of operation of the gate we have introduced a tunable delay line between the two photons. This allowed us to move from high-fidelity operation to a regime where the photons become distinguishable and the success probability of the scheme significantly depends on input state. We discuss in detail possible systematic effects that could influence the gate fidelity estimation.

M. Micuda; M. Sedlak; I. Straka; M. Mikova; M. Dusek; M. Jezek; J. Fiurasek

2014-03-19T23:59:59.000Z

310

Ligand-Gated Chloride Channels Are Receptors for Biogenic Amines in C. elegans  

E-Print Network [OSTI]

Biogenic amines such as serotonin and dopamine are intercellular signaling molecules that function widely as neurotransmitters and neuromodulators. We have identified in the nematode Caenorhabditis elegans three ligand-gated ...

Ringstad, Niels

311

Transient Turbulent Flow Simulation with Water Model Validation and Application to Slide Gate Dithering  

E-Print Network [OSTI]

) 244-6534 Email: bgthomas@illinois.edu Bruce Forman and Hongbin Yin ArcelorMittal Global R&D East) 399-3899 Email: bruce.forman@arcelormittal.com, Hongbin.Yin@arcelormittal.com ABSTRACT Slide gate

Thomas, Brian G.

312

pH sensing properties of graphene solution-gated field-effect transistors  

E-Print Network [OSTI]

The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene ...

Mailly-Giacchetti, Benjamin

2013-01-01T23:59:59.000Z

313

Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility  

Broader source: Energy.gov [DOE]

Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

314

Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems  

Broader source: Energy.gov [DOE]

Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

315

Oxidation Resistant Graphite Studies  

SciTech Connect (OSTI)

The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

W. Windes; R. Smith

2014-07-01T23:59:59.000Z

316

AN AUTOZEROING FLOATING-GATE BANDPASS FILTER Paul Hasler, Bradley A. Minch, and Chris Diorio  

E-Print Network [OSTI]

is the thermal Figure 1: An autozeroing oating-gate ampli er AFGA that uses pFET hot-electron injection a bandpass oating-gate ampli er that uses tunneling and pFET hot-electron injection to set its DC operating the current through the pFET. Steady state occurs when the injection current is equal to the tunneling current

Diorio, Chris

317

A review of "Gate of Heaven." by Abraham Cohen de Herrera  

E-Print Network [OSTI]

, and always with a complex sensation compounded of affinity with, and unbridgeable distance from, the man whose pen marked the pages so idiosyncratically. Abraham Cohen de Herrera. Gate of Heaven. Translated from the Spanish with Introduction and Notes... ready access to Herrera?s Gate of Heaven. Not only is this the first English translation of Puerta del Cielo, but it is also the first complete annotated edition of 198 SEVENTEENTH-CENTURY NEWS this important work of Jewish mysticism in any language...

William E. Engel

2003-01-01T23:59:59.000Z

318

Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing  

E-Print Network [OSTI]

A quantum computer can solve hard problems - such as prime factoring, database searching, and quantum simulation - at the cost of needing to protect fragile quantum states from error. Quantum error correction provides this protection, by distributing a logical state among many physical qubits via quantum entanglement. Superconductivity is an appealing platform, as it allows for constructing large quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code is a natural choice for error correction, as it uses only nearest-neighbour coupling and rapidly-cycled entangling gates. The gate fidelity requirements are modest: The per-step fidelity threshold is only about 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor, achieving an average single-qubit gate fidelity of 99.92% and a two-qubit gate fidelity up to 99.4%. This places Josephson quantum computing at the fault-tolerant threshold for surface code error correction. Our quantum processor is a first step towards the surface code, using five qubits arranged in a linear array with nearest-neighbour coupling. As a further demonstration, we construct a five-qubit Greenberger-Horne-Zeilinger (GHZ) state using the complete circuit and full set of gates. The results demonstrate that Josephson quantum computing is a high-fidelity technology, with a clear path to scaling up to large-scale, fault-tolerant quantum circuits.

R. Barends; J. Kelly; A. Megrant; A. Veitia; D. Sank; E. Jeffrey; T. C. White; J. Mutus; A. G. Fowler; B. Campbell; Y. Chen; Z. Chen; B. Chiaro; A. Dunsworth; C. Neill; P. O`Malley; P. Roushan; A. Vainsencher; J. Wenner; A. N. Korotkov; A. N. Cleland; John M. Martinis

2014-02-19T23:59:59.000Z

319

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications  

SciTech Connect (OSTI)

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

None

2011-07-31T23:59:59.000Z

320

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-29T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Correlation of gross tumor volume excursion with potential benefits of respiratory gating  

SciTech Connect (OSTI)

Purpose: To test the hypothesis that the magnitude of thoracic tumor motion can be used to determine the desirability of respiratory gating. Methods and materials: Twenty patients to be treated for lung tumors had computed tomography image data sets acquired under assisted breath hold at normal inspiration (100% tidal volume), at full expiration (0% tidal volume), and under free breathing. A radiation oncologist outlined gross tumor volumes (GTVs) on the breath-hold computed tomographic images. These data sets were registered to the free-breathing image data set. Two sets of treatment plans were generated: one based on an internal target volume explicitly formed from assessment of the excursion of the clinical target volume (CTV) through the respiratory cycle, representing an ungated treatment, and the other based on the 0% tidal volume CTV, representing a gated treatment with little margin for residual motion. Dose-volume statistics were correlated to the magnitude of the motion of the center of the GTV during respiration. Results: Patients whose GTVs were >100 cm{sup 3} showed little decrease in lung dose under gating. The other patients showed a correlation between the excursion of the center of the GTV and a reduction in potential lung toxicity. As residual motion increased, the benefits of respiratory gating increased. Conclusion: Gating seems to be advantageous for patients whose GTVs are <100 cm{sup 3} and for whom the center of the GTV exhibits significant motion, provided residual motion under gating is kept small.

Starkschall, George [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)]. E-mail: gstarksc@mdanderson.org; Forster, Kenneth M. [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Kitamura, Kei [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Department of Radiology, Hokkaido University, Graduate School of Medicine, Sapporo (Japan); Cardenas, Alex [Department of Radiation Physics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Tucker, Susan L. [Department of Biomathematics, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States); Stevens, Craig W. [Department of Radiation Oncology, University of Texas M.D. Anderson Cancer Center, Houston, TX (United States)

2004-11-15T23:59:59.000Z

322

Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry  

E-Print Network [OSTI]

Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

Colin J. Trout; Kenneth R. Brown

2015-01-07T23:59:59.000Z

323

New VLSI complexity results for threshold gate comparison  

SciTech Connect (OSTI)

The paper overviews recent developments concerning optimal (from the point of view of size and depth) implementations of COMPARISON using threshold gates. We detail a class of solutions which also covers another particular solution, and spans from constant to logarithmic depths. These circuit complexity results are supplemented by fresh VLSI complexity results having applications to hardware implementations of neural networks and to VLSI-friendly learning algorithms. In order to estimate the area (A) and the delay (T), as well as the classical AT{sup 2}, we shall use the following {open_quote}cost functions{close_quote}: (i) the connectivity (i.e., sum of fan-ins) and the number-of-bits for representing the weights and thresholds are used as closer approximations of the area; while (ii) the fan-ins and the length of the wires are used for closer estimates of the delay. Such approximations allow us to compare the different solutions-which present very interesting fan-in dependent depth-size and area-delay tradeoffs - with respect to AT{sup 2}.

Beiu, V.

1996-12-31T23:59:59.000Z

324

Atomic layer deposition of Hf{sub x}Al{sub y}C{sub z} as a work function material in metal gate MOS devices  

SciTech Connect (OSTI)

As advanced silicon semiconductor devices are transitioning from planar to 3D structures, new materials and processes are needed to control the device characteristics. Atomic layer deposition (ALD) of Hf{sub x}Al{sub y}C{sub z} films using hafnium chloride and trimethylaluminum precursors was combined with postdeposition anneals and ALD liners to control the device characteristics in high-k metal-gate devices. Combinatorial process methods and technologies were employed for rapid electrical and materials characterization of various materials stacks. The effective work function in metal–oxide–semiconductor capacitor devices with the Hf{sub x}Al{sub y}C{sub z} layer coupled with an ALD HfO{sub 2} dielectric was quantified to be mid-gap at ?4.6?eV. Thus, Hf{sub x}Al{sub y}C{sub z} is a promising metal gate work function material that allows for the tuning of device threshold voltages (V{sub th}) for anticipated multi-V{sub th} integrated circuit devices.

Lee, Albert, E-mail: alee@intermolecular.com; Fuchigami, Nobi; Pisharoty, Divya; Hong, Zhendong; Haywood, Ed; Joshi, Amol; Mujumdar, Salil; Bodke, Ashish; Karlsson, Olov [Intermolecular, 3011 North First Street, San Jose, California 95134 (United States); Kim, Hoon; Choi, Kisik [GLOBALFOUNDRIES Technology Research Group, 257 Fuller Road, Albany, New York 12309 (United States); Besser, Paul [GLOBALFOUNDRIES, 1050 East Arques, Sunnyvale, California 94085 (United States)

2014-01-15T23:59:59.000Z

325

Formation of Secondary Organic Aerosol from the Direct Photolytic Generation of Organic Radicals  

E-Print Network [OSTI]

The immense complexity inherent in the formation of secondary organic aerosol (SOA)—due primarily to the large number of oxidation steps and reaction pathways involved—has limited the detailed understanding of its underlying ...

Kessler, Sean Herbert

326

Photochemistry of aromatic hydrocarbons: implications for ozone and secondary organic aerosol formation  

E-Print Network [OSTI]

formation is essential to assess the urban air pollution. This dissertation consists of two parts: (1) theoretical investigation of the toluene oxidation initiated by OH radical using quantum chemical and kinetic calculations to understand the mechanism of O...

Suh, Inseon

2006-08-16T23:59:59.000Z

327

Barium oxide, calcium oxide, magnesia, and alkali oxide free glass  

DOE Patents [OSTI]

A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

2013-09-24T23:59:59.000Z

328

METAL OXIDE NANOPARTICLES  

SciTech Connect (OSTI)

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

329

Mixed oxide solid solutions  

DOE Patents [OSTI]

The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

2003-01-01T23:59:59.000Z

330

Textures of oxide films grown on nickel electrodeposits  

SciTech Connect (OSTI)

High-temperature corrosion properties of heat-resistant materials depend on the formation of a protective oxide layer on their surface, which inhibits further degradation. Among many factors affecting the oxide growth rate and its resistance to spallation, the crystallographic texture of the metallic substrate plays an important role. In this study, the authors explore the possibilities of modifying the surface texture of polycrystalline Ni using electrodeposition. In addition to analyzing the texture of metallic substrates and its evolution at high temperatures, the texture of oxide formed on each substrate is also considered.

Czerwinski, F.; Palumbo, G.; Szpunar, J.A.

1998-10-13T23:59:59.000Z

331

Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology  

SciTech Connect (OSTI)

Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

2014-07-01T23:59:59.000Z

332

In–Ga–Zn–O thin film transistor with HfO{sub 2} gate insulator prepared using various O{sub 2}/(Ar + O{sub 2}) gas ratios  

SciTech Connect (OSTI)

We have investigated the effect of the deposition of an HfO{sub 2} thin film as a gate insulator with different O{sub 2}/(Ar + O{sub 2}) gas ratios using RF magnetron sputtering. The HfO{sub 2} thin film affected the device performance of amorphous indium–gallium–zinc oxide transistors. The performance of the fabricated transistors improved monotonously with increasing O{sub 2}/(Ar + O{sub 2}) gas ratio: at a ratio of 0.35, the field effect mobility of the amorphous InGaZnO thin film transistors was improved to 7.54 cm{sup 2}/(V s). Compared to those prepared with an O{sub 2}/(Ar + O{sub 2}) gas ratio of 0.05, the field effect mobility of the amorphous InGaZnO thin film transistors was increased to 1.64 cm{sup 2}/(V s) at a ratio of 0.35. This enhancement in the field effect mobility was attributed to the reduction of the root mean square roughness of the gate insulator layer, which might result from the trap states and surface scattering of the gate insulator layer at the lower O{sub 2}/(Ar + O{sub 2}) gas ratio.

Jo, Young Je [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)] [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of); Lee, In-Hwan [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of)] [School of Advanced Materials Engineering, Chonbuk National University, Chonju 561-756 (Korea, Republic of); Kwak, Joon Seop, E-mail: jskwak@sunchon.ac.kr [WCU Department of Printed Electronics, Sunchon National University, Chonnam 540-742 (Korea, Republic of)

2012-10-15T23:59:59.000Z

333

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain  

SciTech Connect (OSTI)

Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5?×?10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

2014-01-13T23:59:59.000Z

334

Interactions of Fe(II) with the iron oxidizing bacterium Rhodopseudomonas palustris TIE-1  

E-Print Network [OSTI]

Microbial anaerobic iron oxidation has long been of interest to biologists and geologists, both as a possible mechanism for the creation of banded iron formations before the rise of oxygen, and as a model system for organisms ...

Bird, Lina J. (Lina Joana)

2013-01-01T23:59:59.000Z

335

Experimental Studies of Hydroxyl Radical Initiated Tropospheric Oxidation of Unsaturated Hydrocarbons  

E-Print Network [OSTI]

radical, followed by chain propagating radical reactions. Their oxidation is the major source for ground level ozone formation in both rural and urban area and understanding their chemistry is essential for regional air quality modeling. Until recently...

Ghosh, Buddhadeb

2011-10-21T23:59:59.000Z

336

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

337

Stabilized chromium oxide film  

DOE Patents [OSTI]

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

338

Reducible oxide based catalysts  

DOE Patents [OSTI]

A catalyst is disclosed herein. The catalyst includes a reducible oxide support and at least one noble metal fixed on the reducible oxide support. The noble metal(s) is loaded on the support at a substantially constant temperature and pH.

Thompson, Levi T.; Kim, Chang Hwan; Bej, Shyamal K.

2010-04-06T23:59:59.000Z

339

Exact solutions for a universal set of quantum gates on a family of iso-spectral spin chains  

E-Print Network [OSTI]

We find exact solutions for a universal set of quantum gates on a scalable candidate for quantum computers, namely an array of two level systems. The gates are constructed by a combination of dynamical and geometrical (non-Abelian) phases. Previously these gates have been constructed mostly on non-scalable systems and by numerical searches among the loops in the manifold of control parameters of the Hamiltonian.

V. Karimipour; N. Majd

2005-09-25T23:59:59.000Z

340

Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach  

SciTech Connect (OSTI)

Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the various atomistic mechanisms occurring during this fabrication step. In this article, some progress performed to adapt the reaction rate approach for the modelling of oxynitride growth by a nitrous ambient are reported. The Ellis and Buhrman's approach is used for the gas phase decomposition modelling. Taking into account the mass balance of the species at the interface between the oxynitride and silicon, a minimal kinetic model describing the oxide growth has been calibrated and implemented. The influence of nitrogen on the reaction rate has been introduced in an empirical way. The oxidation kinetics predicted with this minimal model compares well with several experiments.

Dominique Krzeminski, Christophe, E-mail: christophe.krzeminski@isen.fr [Départment ISEN, IEMN-UMR-8520, 41 Boulevard Vauban, 59046 Lille Cedex (France)

2013-12-14T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

A Reactive Oxide Overlayer on Rh Nanoparticles during CO Oxidation and Its Size Dependence Studied by in Situ Ambient Pressure XPS  

SciTech Connect (OSTI)

CO oxidation is one of the most studied heterogeneous reactions, being scientifically and industrially important, particularly for removal of CO from exhaust streams and preferential oxidation for hydrogen purification in fuel cell applications. The precious metals Ru, Rh, Pd, Pt, and Au are most commonly used for this reaction because of their high activity and stability. Despite the wealth of experimental and theoretical data, it remains unclear what is the active surface for CO oxidation under catalytic conditions for these metals. In this communication, we utilize in situ synchrotron ambient pressure X-ray photoelectron spectroscopy (APXPS) to monitor the oxidation state at the surface of Rh nanoparticles during CO oxidation and demonstrate that the active catalyst is a surface oxide, the formation of which is dependent on particle size. The amount of oxide formed and the reaction rate both increase with decreasing particle size.

Grass, Michael E.; Zhang, Yawen; Butcher, Derek R.; Park, Jeong Y.; Li, Yimin; Bluhm, Hendrik; Bratlie, Kaitlin M.; Zhang, Tianfu; Somorjai, Gabor A.

2008-09-15T23:59:59.000Z

342

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents [OSTI]

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

343

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

SciTech Connect (OSTI)

This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davisâ??s existing GATE centers have become the campusâ??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

Erickson, Paul

2012-05-31T23:59:59.000Z

344

SUPERCRITICAL WATER PARTIAL OXIDATION G.T. Hong and M.H. Spritzer  

E-Print Network [OSTI]

Oxidation (SWPO), a gasification process involving oxidative reactions in a supercritical water environment the gasification medium, resulting in less char formation and improved hydrogen yield. Another major advantage water content of the medium is effective for gasification of hydrogen-poor materials such as coal

345

Instructions for use Role of Cerium Oxide in the Enhancement of Activity for the Oxygen  

E-Print Network [OSTI]

activity for various fuel cell reactions, such as the hydrogen oxidation reaction (HOR),4 oxygen reduction. Recently, CeOx has been also utilized as a cocatalyst with Pt catalyst for ORR in PEM fuel cells.17 at the Pt oxide formation potential. INTRODUCTION Fuel cells, especially polymer electrolyte membrane (PEM

Tsunogai, Urumu

346

Dry oxidation and fracture of LWR spent fuels  

SciTech Connect (OSTI)

This report evaluates the characteristics of oxidation and fracture of light-water reactor (LWR) spent fuel in dry air. It also discusses their effects on radionuclide releases in the anticipated high-level waste repository environment. A sphere model may describe diffusion-limited formation of lower oxides, such as U{sub 4}O{sub 9}, in the oxidation of the spent fuel (SF) matrix. Detrimental higher oxides, such as U{sub 3}O{sub 8}, may not form at temperatures below a threshold temperature. The nucleation process suggests that a threshold temperature exists. The calculated results regarding fracture properties of the SF matrix agree with experimental observations. Oxidation and fracture of Zircaloy may not be significant under anticipated conditions. Under saturated or unsaturated aqueous conditions, oxidation of the SF matrix is believed to increase the releases of Pu-(239+240), Am-(241+243), C-14, Tc-99, I-129, and Cs-135. Under dry conditions, I-129 releases are likely to be small, unlike C-14, in lower oxides; Cl-36, Tc-99, I-129, and Cs-135 may be released fast in higher oxides. 79 refs.

Ahn, T.M.

1996-11-01T23:59:59.000Z

347

Materials Selection for Oxide-based Resistive Random Access Memories  

E-Print Network [OSTI]

The energies of atomic processes in resistive random access memories (RRAMs) are calculated for four typical oxides, HfO2, TiO2, Ta 2O5, and Al2O3, to define a materials selection process. O vacancies have the lowest defect formation energy in the O...

Guo, Yuzheng; Robertson, John

2014-12-05T23:59:59.000Z

348

Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate  

DOE Patents [OSTI]

Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

Sappey, Andrew D. (Golden, CO)

1998-04-14T23:59:59.000Z

349

Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels  

E-Print Network [OSTI]

The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

2009-02-16T23:59:59.000Z

350

Support shape effect in metal oxide catalysis: ceria nanoshapes supported vanadia catalysts for oxidative dehydrogenation of iso-butane  

SciTech Connect (OSTI)

The activation energy of VOx/CeO2 catalysts in oxidative dehydrogenation of iso-butane was found dependent on the shape of ceria support: rods < octahedra, closely related to the surface oxygen vacancy formation energy and defects amount of the two ceria supports with different crystallographic surface planes.

Wu, Zili [ORNL; Schwartz, Viviane [ORNL; Li, Meijun [ORNL; Rondinone, Adam Justin [ORNL; Overbury, Steven {Steve} H [ORNL

2012-01-01T23:59:59.000Z

351

Oxidative Tritium Decontamination System  

DOE Patents [OSTI]

The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

2006-02-07T23:59:59.000Z

352

Controlled CO preferential oxidation  

DOE Patents [OSTI]

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

353

Resilience of gated avalanche photodiodes against bright illumination attacks in quantum cryptography  

E-Print Network [OSTI]

Semiconductor avalanche photodiodes (APDs) are commonly used for single photon detection in quantum key distribution. Recently, many attacks using bright illumination have been proposed to manipulate gated InGaAs APDs. In order to devise effective counter-measures, careful analysis of these attacks must be carried out to distinguish between incorrect operation and genuine loopholes. Here, we show that correctly-operated, gated APDs are immune to continuous-wave illumination attacks, while monitoring the photocurrent for anomalously high values is a straightforward counter-measure against attacks using temporally tailored light.

Z. L. Yuan; J. F. Dynes; A. J. Shields

2011-06-14T23:59:59.000Z

354

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays  

SciTech Connect (OSTI)

Low-frequency noise is used to study the electronic transport in arrays of 14?nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d'Ascq (France)] [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d'Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23T23:59:59.000Z

355

A proposal for the implementation of quantum gates with photonic-crystal coupled cavity waveguides  

E-Print Network [OSTI]

Quantum computers require technologies that offer both sufficient control over coherent quantum phenomena and minimal spurious interactions with the environment. We show, that photons confined to photonic crystals, and in particular to highly efficient waveguides formed from linear chains of defects doped with atoms can generate strong non-linear interactions which allow to implement both single and two qubit quantum gates. The simplicity of the gate switching mechanism, the experimental feasibility of fabricating two dimensional photonic crystal structures and integrability of this device with optoelectronics offers new interesting possibilities for optical quantum information processing networks.

Dimitris G. Angelakis; Marcelo Franca Santos; Vassilis Yannopapas; Artur Ekert

2007-04-12T23:59:59.000Z

356

Noise-Protected Gate for Six-Electron Double-Dot Qubits  

E-Print Network [OSTI]

Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum dots: singlet and triplet states in this shell have identical charge distributions. Our phase-gate simulations, which include $1/f$ charge noise from fluctuating traps, show that this symmetry is most effectively exploited if the gate operation switches rapidly between sweet spots deep in the (3,3) and (4,2) charge stability regions; fidelities very close to one are predicted if subnanosecond switching can be performed.

Sebastian Mehl; David P. DiVincenzo

2014-08-05T23:59:59.000Z

357

Engineering a C-Phase quantum gate: optical design and experimental realization  

E-Print Network [OSTI]

A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

Andrea Chiuri; Chiara Greganti; Paolo Mataloni

2012-04-12T23:59:59.000Z

358

ADVANCED OXIDATION PROCESS  

SciTech Connect (OSTI)

The removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from automotive fuels is an integral component in the development of cleaner burning and more efficient automobile engines. Oxidative desulfurization (ODS) wherein the dibenzothiophene derivative is converted to its corresponding sulfoxide and sulfone is an attractive approach to sulfur removal because the oxidized species are easily extracted or precipitated and filtered from the hydrocarbon phase. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) catalytically convert dibenzothiophene and its derivatives rapidly and effectively at moderate temperatures (50-60 C) and ambient pressure to the corresponding sulfoxides and sulfones. The oxidation process can be performed in both aqueous systems containing alcohols such as methanol, ethanol, or t-butanol, and in a two-phase hydrocarbon/aqueous system containing tert-butanol or acetonitrile. In the biphasic system, essentially complete conversion of the DBT to its oxidized products can be achieved using slightly longer reaction times than in homogeneous solution. Among the key features of the technology are the mild reaction conditions, the very high selectivity where no over oxidation of the sulfur compounds occurs, the near stoichiometric use of hydrogen peroxide, the apparent lack of degradation of sensitive fuel components, and the ease of separation of oxidized products.

Dr. Colin P. Horwitz; Dr. Terrence J. Collins

2003-11-04T23:59:59.000Z

359

Selective methane oxidation over promoted oxide catalysts. Quarterly report, March--May 1995  

SciTech Connect (OSTI)

The objective of this research is the selective oxidative coupling of methane to C{sub 2}H{sub 4} hydrocarbons and oxygenates, in particular formaldehyde and methanol. Air, oxygen or carbon dioxide, rather than nitrous oxide will be utilized as the oxidizing gas at high gas hourly space velocity, but mild reaction conditions (500-700 {degrees}C, 1 atm total pressure). All the investigated processes are catalytic, aiming at minimizing gas phase reactions that are difficult to control. The research is divided into the following three tasks: (1) maximizing selective methane oxidation to C{sub 2}H{sub 4} products over promoted Sr/La{sub 2}O{sub 3}; (2) selective methane oxidation to oxygenates; and (3) catalyst characterization and optimization. Task 1 dealt with the preparation, testing, and optimization of acidic promoted lanthana-based catalysts for the synthesis of C{sub 2}H{sub 4} hydrocarbons and is essentially completed. Task 2 aims at the formation and optimization of promoted catalysts for the synthesis of oxygenates, in particular formaldehyde and methanol. Task 3 involves characterization of the most promising catalysts so that optimization can be achieved under Task 2. Accomplishments for this period are presented.

Klier, K.; Herman, R.G.; Wang, Chaun-Bao; Shi, Chunlei; Sun, Qun

1995-08-01T23:59:59.000Z

360

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect (OSTI)

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced by Truncated Constructs  

E-Print Network [OSTI]

Dominant-Negative Synthesis Suppression of Voltage-Gated Calcium Channel Cav2.2 Induced, United Kingdom Voltage-gated calcium channel 1 subunits consist of four domains (I­IV), each with six by the cytoplasmic I-II loop of Cav2.2. It requires transmembrane seg- ments, because the isolated Cav2.2 N terminus

Dolphin, Annette C.

362

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor  

E-Print Network [OSTI]

In this letter, we present a new AlGaN/GaN enhancement-mode (E-mode) transistor based on a dual-gate structure. The dual gate allows the transistor to combine an E-mode behavior with low on-resistance and very high breakdown ...

Lu, Bin

363

Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks  

E-Print Network [OSTI]

Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks N. Zaslavsky Abstract Substrate hot electron stress was applied on n+ -ringed n-channel MOS capacitors with TiN/Hf-silicate. Introduction Hafnium silicate based high-j gate dielectrics have been put forth as the leading candidates

Misra, Durgamadhab "Durga"

364

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3  

E-Print Network [OSTI]

ECG-GATED C-ARM COMPUTED TOMOGRAPHY USING L1 REGULARIZATION Cyril Mory 1,3 , Bo Zhang 3 , Vincent of the algorithm used for the minimization. Index Terms -- C-Arm, computed tomography, ECG- gating, augmented arises from the synchronization with the patient's electrocardiogram (ECG), which is necessary to avoid

Paris-Sud XI, Université de

365

An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED  

E-Print Network [OSTI]

A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states ...

Yang, Chuiping; Chu, Shih-I; Han, Siyuan

2004-03-31T23:59:59.000Z

366

Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED  

E-Print Network [OSTI]

We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also ...

Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

2003-04-17T23:59:59.000Z

367

Methylarsenate sorption to aluminum oxide Masayuki Shimizu, mshimizu@udel.edu, Matthew Ginder-Vogel, mattgv@udel.edu, Sanjai J. Parikh, sjparikh@udel.edu, and Donald  

E-Print Network [OSTI]

Methylarsenate sorption to aluminum oxide GEOC 44 Masayuki Shimizu, mshimizu@udel.edu, Matthew of methylarsenate species in the environment, MMA and DMA sorption behaviors to aluminum oxide are being to examine sorption complex formation between methylarsenate and aluminum oxide. Biogeochemical Redox

Sparks, Donald L.

368

(Non) formation of methanol by direct hydrogenation of formate on copper catalysts  

SciTech Connect (OSTI)

We have attempted to hydrogenate adsorbed formate species on copper catalysts to probe the importance of this postulated mechanistic step in methanol synthesis. Surface formate coverages up to 0.25 were produced at temperatures between 413K and 453K on supported (Cu/SiO2) copper and unsupported copper catalysts. The adlayers were produced by various methods including (1) steady state catalytic conditions in CO2-H2 (3:1, 6 bar) atmospheres, and (2) by exposure of the catalysts to formic acid. As reported in earlier work, the catalytic surface at steady state contains bidentate formate species with coverages up to saturation levels of ~ 0.25 at the low temperatures of this study. The reactivity of these formate adlayers was investigated at relevant reaction temperatures in atmospheres containing up to 6 bar H2 partial pressure by simultaneous mass spectrometry (MS) and infrared (IR) spectroscopy measurements. The yield of methanol during the attempted hydrogenation (“titration”) of these adlayers was insignificant (<0.2 mol % of the formate adlayer) even in dry hydrogen partial pressures up to 6 bar. Hydrogen titration of formate species produced from formic acid also failed to produce significant quantities of methanol, and attempted titration in gases consisting of CO-hydrogen mixtures or dry CO2 were also unproductive. The formate decomposition kinetics, measured by IR, were also unaffected by these changes in the gas composition. Similar experiments on unsupported copper also failed to show any methanol. From these results, we conclude that methanol synthesis on copper cannot result from the direct hydrogenation of (bidentate) formate species in simple steps involving adsorbed H species alone. Furthermore, experiments performed on both supported (Cu/SiO2) and unsupported copper catalysts gave similar results implying that the methanol synthesis reaction mechanism only involves metal surface chemistry. Pre-exposure of the bidentate formate adlayer to oxidation by O2 or N2O produces a change to a monodentate configuration. Attempted titration of this monodentate formate/O coadsorbed layer in dry hydrogen produces significant quantities of methanol, although decomposition of formate to carbon dioxide and hydrogen remains the dominant reaction pathway. Simultaneous production of water is also observed during this titration as the copper surface is re-reduced. These results indicate that co-adsorbates related to surface oxygen or water-derived species may be critical to methanol production on copper, perhaps assisting in the hydrogenation of adsorbed formate to adsorbed methoxyl.

Yang, Yong; Mims, Charles A.; Disselkamp, Robert S.; Kwak, Ja Hun; Peden, Charles HF; Campbell, C. T.

2010-10-14T23:59:59.000Z

369

Metal oxide membranes for gas separation  

DOE Patents [OSTI]

A method for formation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation. 4 figs.

Anderson, M.A.; Webster, E.T.; Xu, Q.

1994-08-30T23:59:59.000Z

370

Photoluminescence study in diaminobenzene functionalized graphene oxide  

SciTech Connect (OSTI)

Being an excellent electronic material graphene is a very poor candidate for optoelectronic applications. One of the major strategies to develop the optical property in GO is the functionalization of graphene oxide (GO). In the present work GO sheets are functionalized by o-phenylenediamine to achieve diaminobenzene functionalized GO composite (DAB-GO). Formation of DAB-GO composite is further characterized by FTIR, UV, Raman studies. Excellent photoluminescence is observed in DAB-GO composite via passivation of the surface reactive sites by ring-opening amination of epoxides of GO.

Gupta, Abhisek, E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

2014-10-15T23:59:59.000Z

371

Cerium Oxide Coating for Oxidation Reduction  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: Vegetation Proposed New Substation SitesStanding Friedel Waves,TheoryParliament'v0,MixturesCerium Oxide

372

Circadian gating of the psbAIII high light response in Synechococcus sp. strain PCC 7942  

E-Print Network [OSTI]

(1-5 fold) during the peaks of the cycle. We also found that in a clock null strain the lack of an oscillator does not entirely negate the light response of PpsbAIII::luxAB; however, this response does not demonstrate gating. In contrast...

Shelton, Jeffrey Lyn

2000-01-01T23:59:59.000Z

373

Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry  

E-Print Network [OSTI]

Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry applications D. Visvikis, a* M Angeles, USA Abstract One of the roles for MC simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP

Paris-Sud XI, Université de

374

How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated  

E-Print Network [OSTI]

. With this explosive growth, it has become imperative that Gating Incorporated instill a Knowledge Management System to retain the vast amount of tacit knowledge. New products are critical for consumer product companies, so finding ways to capture the knowledge of a...

Mudd, John

2009-05-15T23:59:59.000Z

375

Performance of a 512 x 512 Gated CMOS Imager with a 250 ps Exposure Time  

SciTech Connect (OSTI)

We describe the performance of a 512x512 gated CMOS read out integrated circuit (ROIC) with a 250 ps exposure time. A low-skew, H-tree trigger distribution system is used to locally generate individual pixel gates in each 8x8 neighborhood of the ROIC. The temporal width of the gate is voltage controlled and user selectable via a precision potentiometer. The gating implementation was first validated in optical tests of a 64x64 pixel prototype ROIC developed as a proof-of-concept during the early phases of the development program. The layout of the H-Tree addresses each quadrant of the ROIC independently and admits operation of the ROIC in two modes. If “common mode” triggering is used, the camera provides a single 512x512 image. If independent triggers are used, the camera can provide up to four 256x256 images with a frame separation set by the trigger intervals. The ROIC design includes small (sub-pixel) optical photodiode structures to allow test and characterization of the ROIC using optical sources prior to bump bonding. Reported test results were obtained using short pulse, second harmonic Ti:Sapphire laser systems operating at ?~ 400 nm at sub-ps pulse widths.

Teruya, A T; Moody, J D; Hsing, W W; Brown, C G; Griffin, M; Mead, A S

2012-10-01T23:59:59.000Z

376

Passivation effect on gate-bias stress instability of carbon nanotube thin film transistors  

SciTech Connect (OSTI)

A prior requirement of any developed transistor for practical use is the stability test. Random network carbon nanotube-thin film transistor (CNT-TFT) was fabricated on SiO{sub 2}/Si. Gate bias stress stability was investigated with various passivation layers of HfO{sub 2} and Al{sub 2}O{sub 3}. Compared to the threshold voltage shift without passivation layer, the measured values in the presence of passivation layers were reduced independent of gate bias polarity except HfO{sub 2} under positive gate bias stress (PGBS). Al{sub 2}O{sub 3} capping layer was found to be the best passivation layer to prevent ambient gas adsorption, while gas adsorption on HfO{sub 2} layer was unavoidable, inducing surface charges to increase threshold voltage shift in particular for PGBS. This high performance in the gate bias stress test of CNT-TFT even superior to that of amorphous silicon opens potential applications to active TFT industry for soft electronics.

Won Lee, Sang [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Suh, Dongseok, E-mail: energy.suh@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Young Lee, Si [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Hee Lee, Young, E-mail: leeyoung@skku.edu [Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Energy Science and Department of Physics, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Department of Physics, Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-04-21T23:59:59.000Z

377

Needle-based reflection refractometry of scattering samples using coherence-gated  

E-Print Network [OSTI]

effects of internal refractive index variation in near-infrared optical tomography: a finite element, and K. D. Paulsen, "Effects of refractive index on near- infrared tomography of the breast," Appl. OptNeedle-based reflection refractometry of scattering samples using coherence-gated detection Adam M

Boppart, Stephen

378

Unique Functional Properties of a Sensory Neuronal P2X ATP-Gated Channel from Zebrafish  

E-Print Network [OSTI]

of native P2X receptor channels evokes a fast inward current carried by mono- valent and calcium ions in a broad range of calcium- dependent signaling events from the neurogenic control of smooth muscle, and a cysteine-rich extracellular loop resembles that of recently discovered proton-gated channels (Wald- mann

Séguéla, Philippe

379

Ligand Gated Ion Channel Functionality Assays Robert P. Hayes, Kumud Raj Poudel and James A. Brozik  

E-Print Network [OSTI]

was to devise a method suitable to test the functionality of the entire family of cysteine-loop ligand gated ion substrate was infused with calcium ions that were trapped by the POPC bilayer. Once the assembly was formed. Electrochemical measurements were taken using a calcium ion sensitive electrode. The assemblies were interrogated

Collins, Gary S.

380

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control  

E-Print Network [OSTI]

International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control Who we are: The International Center for Tropical Agriculture (CIAT) is a member institute of the Consultative Group on International Agricultural Research (CIAR). Based in Cali, Colombia, we focus

Ferrara, Katherine W.

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Accuracy of gates in a quantum computer based on vibrational eigenstates Dmitri Babikov  

E-Print Network [OSTI]

of quantum gates in such a system. Optimal control theory and numerical time-propagation of vibrational wave the computational sciences:2 ``Quantum computing would be to ordinary com- puting what nuclear energy is to fire'' consisting of two states 0 and 1 that have been harnessed for running quantum computing algorithms, setting

Reid, Scott A.

382

Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire  

SciTech Connect (OSTI)

A theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the electron current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied the operation of the spin transistor under the following conditions: (A) the full spin polarization of electrons in the contacts, zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For case (A), the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for case (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for case (B) have been compared with the recent experimental data and a good agreement has been found.

Wójcik, P.; Adamowski, J., E-mail: adamowski@fis.agh.edu.pl; Spisak, B. J.; Wo?oszyn, M. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, Kraków (Poland)

2014-03-14T23:59:59.000Z

383

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors  

E-Print Network [OSTI]

Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

Dekker, Cees

384

7-Gate Kinetic AMPA Model Kinetics to match EPSCs from calyx of Held  

E-Print Network [OSTI]

7-Gate Kinetic AMPA Model · Kinetics to match EPSCs from calyx of Held · Multiple closed, open and EPSC amplitude Bruce Graham Department of Computing Science and Mathematics, University of Stirling, U, including the calyx of Held in the mammalian auditory system. Such depression may be mediated

Graham, Bruce

385

REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS  

E-Print Network [OSTI]

REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS David Halupka@eecg}.toronto.edu ABSTRACT This paper discusses an implementation of a dual- microphone phase-based speech enhancement or irrelevant conversations, are present has fueled research interest in the areas of speech enhancement

Sheikholeslami, Ali

386

Method and system for measuring gate valve clearances and seating force  

DOE Patents [OSTI]

Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

1996-01-01T23:59:59.000Z

387

Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo  

E-Print Network [OSTI]

Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo Associate Professor conductivity (twice that of diamond). Due to Carbon's affinity for tetrahedral bonding, its surface is amenable atoms. Our research focuses on the attachment and diffusion of different atomic species to the surface

Bjørnstad, Ottar Nordal

388

Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights  

E-Print Network [OSTI]

PWP-076 Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow.ucei.berkeley.edu/ucei #12;Economic Congestion Relief Across Multiple Regions Requires Tradable Physical Flow-gate Rights- mission use. The North American Electric Reliability Council NERC is in the process of implementing

California at Berkeley. University of

389

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in  

E-Print Network [OSTI]

Effects of Magnesium on Inactivation of the Voltage-gated Calcium Current in Cardiac Myocytes H-dependent inactivation can be modulated by changes in cytoplasmic Mg~+. INTRODUCTION Magnesium is an important constituent of the intracellular milieu. Despite the importance of magnesium as an essential cofactor

390

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1  

E-Print Network [OSTI]

Photothermal Response in Dual-Gated Bilayer Graphene M.-H. Kim,1 J. Yan,1,2 R. J. Suess,3 T. E photoresponse in gapped bilayer graphene was investigated by optical and transport measurements. A pulse There is growing recognition that graphene has excep- tional potential as a new optoelectronic material, which has

Murphy, Thomas E.

391

Current transport, gate dielectrics and band gap engineering in graphene devices  

E-Print Network [OSTI]

Current transport, gate dielectrics and band gap engineering in graphene devices Wenjuan Zhu In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find

Perebeinos, Vasili

392

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime  

E-Print Network [OSTI]

Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent as promising thermoelectric devices1 . In comparison to their bulk counterparts, they provide opportunities of thermoelectric conversion at a given temperature T . Indeed, they allow to reduce the phonon contribution ph

Recanati, Catherine

393

Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate  

E-Print Network [OSTI]

Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

Paris-Sud XI, Université de

394

Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints  

E-Print Network [OSTI]

Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

Kolodny, Avinoam

395

Transformation of carbon monoxide dimer surface structures on yttrium oxide modified by silver  

SciTech Connect (OSTI)

It has been established that introducing ions of silver(II) in yttrium(III) oxide leads to the formation of a significant concentration of a paramagnetic dimer species (CO)/sub 2/-in the course of the adsorption of carbon monoxide, and that these dimers exhibit high thermal stability and reactivity. Reactions are proposed for the formation of the dimer species (CO)/sub 2//sup 2 -/ and (CO)/sub 2//sup -/ on the surface of the Ag/Y/sub 2/O/sub 3/ catalyst that involve the reduction of the anion vacancies and a change in the oxidation state of the silver ions. Modifying the yttrium oxide with ionic silver leads to a marked decrease in the strength of the oxidative ability of the surface of the catalyst for CO, while the nature of the active sites of the yttrium oxide, which adsorbs CO in three forms, remains unchanged.

Vydrin, S.N.; Bobolev, A.V.; Loginov, A.Yu.

1987-09-10T23:59:59.000Z

396

Active & passive oxidation of dense SiC & Al?O? composites  

E-Print Network [OSTI]

that the initial rate of oxidation is dependent on the surface reaction between SiC and oxygen till a su6icient thickness of Si02 was formed to produce a diffusion - controlled mechanism. The rate determining step in the passive oxidation was the diffusion... of oxidation. Passive oxidation (in air and oxygen) resulted in a gain in weight, which was determined to be higher for higher partial pressures of oxygen, and led to the formation of an aluminosilicate layer on the surface of the specimen. The composition...

Malhotra, Rohit

1991-01-01T23:59:59.000Z

397

In situ atomic force microscopy imaging of electroprecipitated nickel hydrous oxide films in alkaline electrolytes  

SciTech Connect (OSTI)

In situ atomic force microscopy images of nickel hydrous oxide films electrodeposited on the basal plane of highly oriented pyrolytic graphite in alkaline electrolytes have shown that a stepwise oxidation leads to irreversible formation of wide crevices throughout the material. Upon subsequent stepwise reduction, the gaps close leaving a hairline type crack which follows the profile of the crevice. These potential induced structural rearrangements have been attributed to stresses induced by differences in the densities of the nickel hydrous oxide in the two oxidation states. 9 refs., 5 figs.

Chen, R.; Mo, Y.; Scherson, D.A. (Case Western Reserve Univ., Cleveland, OH (United States))

1994-11-01T23:59:59.000Z

398

Observing Massive Galaxy Formation  

E-Print Network [OSTI]

A major goal of contemporary astrophysics is understanding the origin of the most massive galaxies in the universe, particularly nearby ellipticals and spirals. Theoretical models of galaxy formation have existed for many decades, although low and high redshift observations are only beginning to put constraints on different ideas. We briefly describe these observations and how they are revealing the methods by which galaxies form by contrasting and comparing fiducial rapid collapse and hierarchical formation model predictions. The available data show that cluster ellipticals must have rapidly formed at z > 2, and that up to 50% of all massive galaxies at z ~ 2.5 are involved in major mergers. While the former is consistent with the monolithic collapse picture, we argue that hierarchal formation is the only model that can reproduce all the available observations.

Christopher J. Conselice

2002-12-20T23:59:59.000Z

399

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

1999-01-01T23:59:59.000Z

400

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

2001-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


401

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

402

Methanol partial oxidation reformer  

DOE Patents [OSTI]

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

403

JPEG File Interchange Format  

E-Print Network [OSTI]

interchange format compressed image representation • PC or Mac or Unix workstation compatible • Standard color space: one or three components. For three components, YCbCr (CCIR 601-256 levels) • APP0 marker used to specify Units, X pixel density, Y pixel... by the Macintosh but not by PCs or workstations. JPEG File Interchange Format, Version 1.02 2 Standard color space The color space to be used is YCbCr as defined by CCIR 601 (256 levels). The RGB components calculated by linear conversion from YCbCr shall...

Hamilton, Eric

2004-03-30T23:59:59.000Z

404

Isolating Triggered Star Formation  

SciTech Connect (OSTI)

Galaxy pairs provide a potentially powerful means of studying triggered star formation from galaxy interactions. We use a large cosmological N-body simulation coupled with a well-tested semi-analytic substructure model to demonstrate that the majority of galaxies in close pairs reside within cluster or group-size halos and therefore represent a biased population, poorly suited for direct comparison to 'field' galaxies. Thus, the frequent observation that some types of galaxies in pairs have redder colors than 'field' galaxies is primarily a selection effect. We use our simulations to devise a means to select galaxy pairs that are isolated in their dark matter halos with respect to other massive subhalos (N= 2 halos) and to select a control sample of isolated galaxies (N= 1 halos) for comparison. We then apply these selection criteria to a volume-limited subset of the 2dF Galaxy Redshift Survey with M{sub B,j} {le} -19 and obtain the first clean measure of the typical fraction of galaxies affected by triggered star formation and the average elevation in the star formation rate. We find that 24% (30.5 %) of these L* and sub-L* galaxies in isolated 50 (30) h{sup -1} kpc pairs exhibit star formation that is boosted by a factor of {approx}> 5 above their average past value, while only 10% of isolated galaxies in the control sample show this level of enhancement. Thus, 14% (20 %) of the galaxies in these close pairs show clear triggered star formation. Our orbit models suggest that 12% (16%) of 50 (30) h{sup -1} kpc close pairs that are isolated according to our definition have had a close ({le} 30 h{sup -1} kpc) pass within the last Gyr. Thus, the data are broadly consistent with a scenario in which most or all close passes of isolated pairs result in triggered star formation. The isolation criteria we develop provide a means to constrain star formation and feedback prescriptions in hydrodynamic simulations and a very general method of understanding the importance of triggered star formation in a cosmological context.

Barton, Elizabeth J.; Arnold, Jacob A.; /UC, Irvine; Zentner, Andrew R.; /KICP, Chicago /Chicago U., EFI; Bullock, James S.; /UC, Irvine; Wechsler, Risa H.; /KIPAC, Menlo

2007-09-12T23:59:59.000Z

405

Molecular water oxidation catalyst  

DOE Patents [OSTI]

A dimeric composition of the formula: ##STR1## wherein L', L", L'", and L"" are each a bidentate ligand having at least one functional substituent, the ligand selected from bipyridine, phenanthroline, 2-phenylpyridine, bipyrimidine, and bipyrazyl and the functional substituent selected from carboxylic acid, ester, amide, halogenide, anhydride, acyl ketone, alkyl ketone, acid chloride, sulfonic acid, phosphonic acid, and nitro and nitroso groups. An electrochemical oxidation process for the production of the above functionally substituted bidentate ligand diaqua oxo-bridged ruthenium dimers and their use as water oxidation catalysts is described.

Gratzel, Michael (St. Sulpice, CH); Munavalli, Shekhar (Bel Air, MD); Pern, Fu-Jann (Lakewood, CO); Frank, Arthur J. (Lakewood, CO)

1993-01-01T23:59:59.000Z

406

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

407

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents [OSTI]

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z ›(n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

408

Oxidation behavior of Cr-Cr{sub 2}Nb alloys  

SciTech Connect (OSTI)

Oxidation of hypoeutectic Cr-Cr{sub 2}Nb alloys containing 6 and 12% Nb at 950 C resulted in formation of a multiproduct scale consisting of a continuous Cr{sub 2}O{sub 3} outer layer and an inner region of discrete CrNbO{sub 4} products interspersed with Cr{sub 2}O{sub 3}. Overall oxidation behavior resembled that of Cr as reactions with the Cr-rich phase tended to dominate. Oxidation resistance, in terms of reaction kinetics and scale adherence, increased with increasing volume fraction of the Cr-Cr{sub 2}Nb eutectic phase. A model for the oxidation of these alloys based on the growth of Cr{sub 2}O{sub 3} on the Cr-rich matrix regions and the formation of a slower growing CrNbO{sub 4} on the Cr{sub 2}Nb-enriched phase can qualitatively explain the development of the multiproduct scale and the observed gravimetric and spallation results. Possible microstructural/compositional modifications to improve oxidation resistance are suggested.

Tortorelli, P.F.; Pint, B.A.

1996-12-31T23:59:59.000Z

409

Characterization of Amorphous Zinc Tin Oxide Semiconductors....  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

410

Introduction Format Proprietaire -Standard  

E-Print Network [OSTI]

Code for Information Interchange) 4. Unicode IFT-1215 Stefan Monnier 7 #12;BCD IFT-1215 Stefan MonnierSOMMAIRE Introduction Format Propri´etaire -Standard Code Alphanum´erique Entr´ee Alphanum : !, ?, ", (, . . . · Caract`eres sp´eciaux : *, $, ¿, . . . Quelques standards utilis´es pour les coder en binaires 1. BCD

Monnier, Stefan

411

Hair follicle Formation of  

E-Print Network [OSTI]

Hair follicle Formation of new follicles Bud Healed skin Hair bulge Open wound Epidermis a b Dermis 1950s and help to explain the controversy. What is the origin of the cells that make up these new hair follicles? Are they derived from existing hair follicles located at the wound edge

Chuong, Cheng-Ming

412

Long-Term Cyclic Oxidation Behavior of Wrought Commercial Alloys at High Temperatures  

SciTech Connect (OSTI)

The oxidation resistance of a high-temperature alloy is dependent upon sustaining the formation of a protective scale, which is strongly related to the alloying composition and the oxidation condition. The protective oxide scale only provides a finite period of oxidation resistance owing to its eventual breakdown, which is especially accelerated under thermal cycling conditions. This current study focuses on the long-term cyclic oxidation behavior of a number of commercial wrought alloys. The alloys studied were Fe- and Ni-based, containing different levels of minor elements, such as Si, Al, Mn, and Ti. Oxidation testing was conducted at 1000 and 1100 C in still air under both isothermal and thermal cycling conditions (1-day and 7-days). The specific aspects studied were the oxidation behavior of chromia-forming alloys that are used extensively in industry. The current study analyzed the effects of alloying elements, especially the effect of minor element Si, on cyclic oxidation resistance. The behavior of oxide scale growth, scale spallation, subsurface changes, and chromium interdiffusion in the alloy were analyzed in detail. A novel model was developed in the current study to predict the life-time during cyclic oxidation by simulating oxidation kinetics and chromium interdiffusion in the subsurface of chromia-forming alloys.

Bingtao Li

2003-08-05T23:59:59.000Z

413

Nanostructured transition metal oxides useful for water oxidation catalysis  

DOE Patents [OSTI]

The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

Frei, Heinz M; Jiao, Feng

2013-12-24T23:59:59.000Z

414

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL  

E-Print Network [OSTI]

SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach: Individual simulation modules for each fuel cell type · Tubular SOFC · Planar SOFC · MCFC · PEM Reformer · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

Mease, Kenneth D.

415

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide  

E-Print Network [OSTI]

Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide Jessica Whalen, Oscar Marin Flores, Su University INTRODUCTION Energy consumption continues to skyrocket worldwide. Biodiesel is a renewable fuel as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel

Collins, Gary S.

416

Robust quantum gates and a bus architecture for quantum computing with rare-earth-ion doped crystals  

E-Print Network [OSTI]

We present a composite pulse controlled phase gate which together with a bus architecture improves the feasibility of a recent quantum computing proposal based on rare-earth-ion doped crystals. Our proposed gate operation is tolerant to variations between ions of coupling strengths, pulse lengths, and frequency shifts, and it achieves worst case fidelities above 0.999 with relative variations in coupling strength as high as 10% and frequency shifts up to several percent of the resonant Rabi frequency of the laser used to implement the gate. We outline an experiment to demonstrate the creation and detection of maximally entangled states in the system.

Janus Wesenberg; Klaus Moelmer

2003-01-09T23:59:59.000Z

417

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

Morris, Donald E. (Kensington, CA)

1994-01-01T23:59:59.000Z

418

Highly oxidized superconductors  

DOE Patents [OSTI]

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

419

Optically transparent yttrium oxide  

SciTech Connect (OSTI)

A body is described comprising at least 99.9% yttrium oxide having a density of at least 99% of theoretically density, a sample of the body having a in-line transmission of at least 73%, over a wavelength range of 2-5 microns with the sample having a thickness of 0.375 inches.

Hartnett, T.; Greenberg, M.; Gentilman, R.L.

1988-08-02T23:59:59.000Z

420

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2012-09-11T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2014-05-20T23:59:59.000Z

422

Staged membrane oxidation reactor system  

DOE Patents [OSTI]

Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

2013-04-16T23:59:59.000Z

423

REVIEW OF PLUTONIUM OXIDATION LITERATURE  

SciTech Connect (OSTI)

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Korinko, P.

2009-11-12T23:59:59.000Z

424

THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR  

E-Print Network [OSTI]

I• I ntroduct Ion Metal oxide varistors are ceramic semi-SECTION M METAL' OXIDE PHASE IN A ZINC OXIDE VARISTORTHE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR

Clarke, D. E

2011-01-01T23:59:59.000Z

425

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission+Bay,+San+Francisco,+CA/@37.7996107,-122.4363906,... 1/2  

E-Print Network [OSTI]

8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF has tolls. Directions from Golden Gate Bridge to UCSF/Mission Bay San Francisco, CA 94129 Golden Gate;8/1/14 Google Maps https://www.google.com/maps/dir/Golden+Gate+Bridge,+San+Francisco,+CA+94129/UCSF%2FMission

Derisi, Joseph

426

Oxidation Behavior and Chlorination Treatment to Improve Oxidation Resistance of Nb-Mo-Si-B Alloys  

SciTech Connect (OSTI)

This thesis is written in an alternate format. The thesis is composed of a general introduction, two original manuscripts, and a general conclusion. References cited within each chapter are given at the end of each chapter. The general introduction starts with the driving force behind this research, and gives an overview of previous work on boron doped molybdenum silicides, Nb/Nb{sub 5}Si{sub 3} composites, boron modified niobium silicides and molybdenum niobium silicides. Chapter 2 focuses on the oxidation behavior of Nb-Mo-Si-B alloys. Chapter 3 contains studies on a novel chlorination technique to improve the oxidation resistance of Nb-Mo-Si-B alloys. Chapter 4 summarizes the important results in this study.

Vikas Behrani

2004-12-19T23:59:59.000Z

427

Solubility Behavior and Phase Stability of Transition Metal Oxides in Alkaline Hydrothermal Environments  

SciTech Connect (OSTI)

The solubility behavior of transition metal oxides in high temperature water is interpreted by recognizing three types of chemical reaction equilibria: metal oxide hydration/dehydration, metal oxide dissolution and metal ion hydroxocomplex formation. The equilibria are quantified using thermodynamic concepts and the thermochemical properties of the metal oxides/ions representative of the most common constituents of construction metal alloys, i.e., element shaving atomic numbers between Z = 22 (Ti) and Z = 30 (Zn), are summarized on the basis of metal oxide solubility studies conducted in the laboratory. Particular attention is devoted to the uncharged metal ion hydrocomplex, M{sup Z}(OH){sub Z}(aq), since its thermochemical properties define minimum solubilities of the metal oxide at a given temperature. Experimentally-extracted values of standard partial molal entropy (S{sup 0}) for the transition metal ion neutral hydroxocomplex are shown to be influenced by ligand field stabilization energies and complex symmetry.

S.E. Ziemniak

2000-05-18T23:59:59.000Z

428

Modeling of the Properties and Processing of Amorphous Gate Stacks on High Electron Mobility Materials  

E-Print Network [OSTI]

of their defects, simply do not exist. Further, there are no techniques which give the precise bonding structure diffusion of the semiconductor into the oxide? The role of the passivation layer is a key issue which/oxide interfaces and minimize diffusion into the oxide? d. Can we model the C-V and phonon coupling as a function

Kummel, Andrew C.

429

4, 23012331, 2004 Nitrogen oxides  

E-Print Network [OSTI]

of nitrogen oxide (NO), nitrogen dioxide (NO2) and ozone (O3) were performed simul- taneously with aerosolACPD 4, 2301­2331, 2004 Nitrogen oxides measurements in an Amazon site A. M. Cordova et al. Title and Physics Discussions Nitrogen oxides measurements in an Amazon site and enhancements associated with a cold

Paris-Sud XI, Université de

430

Doped palladium containing oxidation catalysts  

DOE Patents [OSTI]

A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

Mohajeri, Nahid

2014-02-18T23:59:59.000Z

431

Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation D. De Salvador1  

E-Print Network [OSTI]

in order to distinguish the pure thermal effects from those produced by the I injection under oxidationCarbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation D. De Salvador1 , E to the formation and growth of C containing precipitates which are promoted by the I injection and act as a sink

432

Recovery and regeneration of spent MHD seed material by the formate process  

DOE Patents [OSTI]

The specification discloses a spent seed recovery and regeneration process for an MHD power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to suppress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate. 5 figures.

Sheth, A.C.; Holt, J.K.; Rasnake, D.G.; Solomon, R.L.; Wilson, G.L.; Herrigel, H.R.

1991-10-15T23:59:59.000Z

433

Graphene and Graphene Oxide: Biofunctionalization and Applications...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

434

Modeling the formation of boron carbide particles in an aerosol flow reactor  

SciTech Connect (OSTI)

In this paper the formation of submicron crystals of boron carbide (B[sub 4]C) by coagulation and sintering by the rapid carbothermal reduction of intimately mixed carbon-boron oxide powders in an aerosol flow reactor at temperatures above the boiling point of boron oxide is investigated. High heating rates (10[sup 5] K/s) force rapid evaporation of boron oxide and suboxides from the precursor powder, resulting in its rupture and formation of boron carbide molecular clusters that grow to macroscopic particles by coagulation. Consequently, the formation and growth of B[sub 4]C particles are described by simultaneous interparticle collision and coalescence using a two-dimensional particle-size distribution model that traces the evolution of both size and shape characteristics of the particles through their volume and surface area. In addition to the coagulation term, the governing population balance equation includes a coalescence contribution based on B[sub 4]C sintering law.

Xiong, Y.; Pratsinis, S.E. (Dept. of Chemical Engineering, Center for Aerosol Processes, Univ. of Cincinnati, Cincinnati, OH (United States)); Weimer, A.W. (Ceramics and Advanced Materials Research, Dow Chemical U.S.A., Midland, MI (United States))

1992-11-01T23:59:59.000Z

435

Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn  

Broader source: Energy.gov [DOE]

Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

436

Regulation of N-type Voltage-Gated Calcium Channels and Presynaptic Function by Cyclin-Dependent Kinase 5  

E-Print Network [OSTI]

N-type voltage-gated calcium channels localize to presynaptic nerve terminals and mediate key events including synaptogenesis and neurotransmission. While several kinases have been implicated in the modulation of calcium ...

Su, Susan C.

437

Abstract----Recently, a novel multi-bit nonvolatile memory based on double gate (DG) MOSFET is  

E-Print Network [OSTI]

and the negative control gate voltages applied for read operation. We used Silvaco Atlas, a 2- D numerical. The quantitative analysis were conducted by Silvaco Atlas, a 2-D numerical device simulator [4]. We read

Lee, Jong Duk

438

E-Print Network 3.0 - atp-gated p2x4 ion Sample Search Results  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

ion Search Powered by Explorit Topic List Advanced Search Sample search results for: atp-gated p2x4 ion Page: << < 1 2 3 4 5 > >> 1 introduction browse basic search advanced...

439

Optimization of Enzymatic Biochemical Logic for Noise Reduction and Scalability: How Many Biocomputing Gates Can Be Interconnected in a Circuit?  

E-Print Network [OSTI]

We report an experimental evaluation of the "input-output surface" for a biochemical AND gate. The obtained data are modeled within the rate-equation approach, with the aim to map out the gate function and cast it in the language of logic variables appropriate for analysis of Boolean logic for scalability. In order to minimize "analog" noise, we consider a theoretical approach for determining an optimal set for the process parameters to minimize "analog" noise amplification for gate concatenation. We establish that under optimized conditions, presently studied biochemical gates can be concatenated for up to order 10 processing steps. Beyond that, new paradigms for avoiding noise build-up will have to be developed. We offer a general discussion of the ideas and possible future challenges for both experimental and theoretical research for advancing scalable biochemical computing.

V. Privman; G. Strack; D. Solenov; M. Pita; E. Katz

2008-09-13T23:59:59.000Z

440

Hybrid Photonic Hyper-Controlled-Not Gate with the Dipole Induced Transparency in Weak-Coupling Regime  

E-Print Network [OSTI]

We present a hybrid hyper-controlled-not (hyper-CNOT) gate for hyperparallel photonic quantum computing based on both the polarization and spatial-mode degrees of freedom (DOFs) of a two-photon system, which is identical to two CNOT gates operating at the same time on four photons in one DOF. This proposal is implemented with the optical reflection-transmission property of a diamond nitrogen-vacancy center embedded in a photonic crystal cavity coupled to two waveguides, which is suitable for the robust and flexible quantum information processing based on both the spatial-mode and polarization DOFs of photon systems in Purcell regime. With the hybrid hyper-CNOT gate, more quantum logic gate operations can be accomplished with less resources in a definite period of time, and the influence from photonic dissipation and environment noise can be suppressed.

Bao-Cang Ren; Fu-Guo Deng

2014-11-02T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network [OSTI]

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

442

A communication-efficient nonlocal measurement with application to communication complexity and bipartite gate capacities  

E-Print Network [OSTI]

Two dual questions in quantum information theory are to determine the communication cost of simulating a bipartite unitary gate, and to determine their communication capacities. We present a bipartite unitary gate with two surprising properties: 1) simulating it with the assistance of unlimited EPR pairs requires far more communication than with a better choice of entangled state, and 2) its communication capacity is far lower than its capacity to create entanglement. This suggests that 1) unlimited EPR pairs are not the most general model of entanglement assistance for two-party communication tasks, and 2) the entangling and communicating abilities of a unitary interaction can vary nearly independently. The technical contribution behind these results is a communication-efficient protocol for measuring whether an unknown shared state lies in a specified rank-one subspace or its orthogonal complement.

Aram W. Harrow; Debbie W. Leung

2011-03-04T23:59:59.000Z

443

Risk analysis study of non-routine turbine/generator shutdown events and intake gate evaluation  

SciTech Connect (OSTI)

The Corps of Engineers has undertaken a study to perform a reliability and risk analysis for evaluating non-routine turbine/generator shutdown scenarios. The study will evaluate the risks associated with events that would require a powerhouse to shut down a turbine/generator by using intake gates. The goal of this project is to estimate any potential damage that could occur for various intake gate configurations and closure times. The data obtained can also be used to evaluate any of the systems that affect reliability of the turbine/generator using established methods of risk analysis. This paper will briefly outline the study objectives and describe the progress of the study to this point.

Bardy, D.M. [Hydroelectric Design Center, Portland, OR (United States)

1995-12-31T23:59:59.000Z

444

2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates  

ScienceCinema (OSTI)

The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

2012-03-21T23:59:59.000Z

445

Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement  

SciTech Connect (OSTI)

The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

Feng, Liqiang [College of Science, Liaoning University of Technology, Jinzhou 121000 (China) [College of Science, Liaoning University of Technology, Jinzhou 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Yuan, Minghu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

2013-12-15T23:59:59.000Z

446

Probing spin entanglement by gate-voltage-controlled interference of current correlation in quantum spin Hall insulators  

E-Print Network [OSTI]

We propose an entanglement detector composed of two quantum spin Hall insulators and a side gate deposited on one of the edge channels. For an ac gate voltage, the differential noise contributed from the entangled electron pairs exhibits the nontrivial step structures, from which the spin entanglement concurrence can be easily obtained. The possible spin dephasing effects in the quantum spin Hall insulators are also included.

Wei Chen; Z. D. Wang; R. Shen; D. Y. Xing

2014-05-21T23:59:59.000Z

447

Tri-Gate Bulk CMOS Technology for Improved SRAM Scalability Changhwan Shin, Borivoje Nikoli, Tsu-Jae King Liu  

E-Print Network [OSTI]

] is an example of such a design; it utilizes a gate electrode that is physically wrapped around the top portion along a poly-Si gate electrode in an SRAM array, for 15nm nominal STI recess depth. The sequence), pull- 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2 PG2 (a) 570nm 263nm 570nm 263nm PG1 PD1 PU1 PU2 PD2

Nikolic, Borivoje

448

Visible Light-Driven Water Oxidation by Ir oxide Clusters Coupledto Single Cr Centers in Mesoporous Silica  

SciTech Connect (OSTI)

Visible light-induced water oxidation has been demonstrated at an Ir oxide nanocluster coupled to a single Cr{sup VI} site on the pore surface of MCM-41 mesoporous silica. The photocatalytic unit was assembled by the reaction of surface Cr=O groups with Ir(acac){sub 3} precursor followed by calcination at 300 C and bond formation monitored by FT-Raman and FT-IR spectroscopy. High-resolution Z-contrast electron micrographs of the calcined material combined with energy-dispersive X-ray spot analysis confirmed the occlusion of Ir oxide nanoparticles inside the mesopores. Oxygen evolution of an aqueous suspension of the Ir{sub x}O{sub y}-CrMCM-41 upon visible light irradiation of the Cr{sup VI}-O ligand-to-metal charge-transfer absorption was monitored mass-spectrometrically. Comparison of the product yields for samples with low Cr content (Cr/Si {le} 0.02) and high Cr content (Cr/Si = 0.05) indicates that only isolated Cr centers are capable of extracting electrons from Ir oxide clusters, while di- or polychromate species are not. Water oxidation at a multielectron-transfer catalyst coupled to a single metal center has not been demonstrated before. The ability to drive water oxidation with a single metal center as electron pump offers opportunities for coupling the oxygen-evolving photocatalytic unit to reducing sites in the nanoporous scaffold.

Nakamura, Ryuhei; Frei, Heinz

2006-07-10T23:59:59.000Z

449

A comparison of the full custom, standard cell and gate array design methodologies  

E-Print Network [OSTI]

A COMPARISON OF THE FULL CUSTOM, STANDARD CELL AND GATE ARRAY DESIGN METHODOLOGIES A Thesis by KING-WAI I&WAN Submitted to the Office of Graduate Studies of Texas A&M University in partial fulffllment of the requirements for the degree... approaches, the designers can select appropriate cells in the libraries which meet their specific requirements such as driving capability and power consumption. But standard cell designs can be used to implement specialized macros such as multi-port...

Kwan, King-Wai

1990-01-01T23:59:59.000Z

450

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode  

SciTech Connect (OSTI)

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520?nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women's Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27T23:59:59.000Z

451

Modeling the current behavior of the digital BiCMOS gate  

E-Print Network [OSTI]

CMOS gate showing the pull-up and pull-down sections 6 Schematics of the pull-up section Pull-up equivalent circuit model . Equivalent circuit model 10 Simplified equivalent circuit model Equivalent circuit model neglecting ATF Collector current... with ATF effect vs without ATF effect 14 Modified circuit model 16 10 Comparison of this work versus SPICE simulation Typical collector current response 17 12 13 Equivalent circuit for 0 ? t0 Equivalent circuit after t0 21 14 Base current...

Tang, Zhilong

1995-01-01T23:59:59.000Z

452

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network [OSTI]

new circuit topology for IGFET, which on average shows 33.8% lower leakage and 34.9% lower area at the cost of 2.8% increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized... ????????????????????????????????????????????????? 5 III.1 Power-delay product for FO4 inverter ????????????????????????????????????? 12 III.2 Power-delay product for 51 Stage ring oscillator ??????????????????????????? 12 IV.1 Delay distribution histogram...

Singh, Amrinder

2011-10-21T23:59:59.000Z

453

Plutonium Oxidation and Subsequent Reduction by Mn (IV) Minerals  

SciTech Connect (OSTI)

Plutonium sorbed to rock tuff was preferentially associated with manganese oxides. On tuff and synthetic pyrolusite (Mn{sup IV}O{sub 2}), Pu(IV) or Pu(V) was initially oxidized, but over time Pu(IV) became the predominant oxidation state of sorbed Pu. Reduction of Pu(V/VI), even on non-oxidizing surfaces, is proposed to result from a lower Gibbs free energy of the hydrolyzed Pu(IV) surface species versus that of the Pu(V) or Pu(VI) surface species. This work suggests that despite initial oxidation of sorbed Pu by oxidizing surfaces to more soluble forms, the less mobile form of Pu, Pu(IV), will dominate Pu solid phase speciation during long term geologic storage. The safe design of a radioactive waste or spent nuclear fuel geologic repository requires a risk assessment of radionuclides that may potentially be released into the surrounding environment. Geochemical knowledge of the radionuclide and the surrounding environment is required for predicting subsurface fate and transport. Although difficult even in simple systems, this task grows increasingly complicated for constituents, like Pu, that exhibit complex environmental chemistries. The environmental behavior of Pu can be influenced by complexation, precipitation, adsorption, colloid formation, and oxidation/reduction (redox) reactions (1-3). To predict the environmental mobility of Pu, the most important of these factors is Pu oxidation state. This is because Pu(IV) is generally 2 to 3 orders of magnitude less mobile than Pu(V) in most environments (4). Further complicating matters, Pu commonly exists simultaneously in several oxidation states (5, 6). Choppin (7) reported Pu may exist as Pu(IV), Pu(V), or Pu(VI) oxic natural groundwaters. It is generally accepted that plutonium associated with suspended particulate matter is predominantly Pu(IV) (8-10), whereas Pu in the aqueous phase is predominantly Pu(V) (2, 11-13). The influence of the character of Mn-containing minerals expected to be found in subsurface repository environments on Pu oxidation state distributions has been the subject of much recent research. Kenney-Kennicutt and Morse (14), Duff et al. (15), and Morgenstern and Choppin (16) observed oxidation of Pu facilitated by Mn(IV)-bearing minerals. Conversely, Shaughnessy et al. (17) used X-ray Absorption near-edge spectroscopy (XANES) to show reduction of Pu(VI) by hausmannite (Mn{sup II}Mn{sub 2}{sup III}O{sub 4}) and manganite ({gamma}-Mn{sup III}OOH) and Kersting et al., (18) observed reduction of Pu(VI) by pyrolusite (Mn{sup IV}O{sub 2}). In this paper, we attempt to reconcile the apparently conflicting datasets by showing that Mn-bearing minerals can indeed oxidize Pu, however, if the oxidized species remains on the solid phase, the oxidation step competes with the formation of Pu(IV) that becomes the predominant solid phase Pu species with time. The experimental approach we took was to conduct longer term (approximately two years later) oxidation state analyses on the Pu sorbed to Yucca Mountain tuff (initial analysis reported by Duff et al., (15)) and measure the time-dependant changes in the oxidation state distribution of Pu in the presence of the Mn mineral pyrolusite.

KAPLAN, DANIEL

2005-09-13T23:59:59.000Z

454

Millisecond Oxidation of Alkanes  

Broader source: Energy.gov [DOE]

This factsheet describes a project whose goal is to commercialize a production process for propylene and acrylic acid from propane using a catalytic auto-thermal oxydehydrogenation process operating at short contact times. Auto-thermal oxidation for conversion of propane to propylene and acrylic acid promises energy savings of 20 trillion Btu per year by 2020. In addition to reducing energy consumption, this technology can reduce manufacturing costs by up to 25 percent, and reduce a variety of greenhouse gas emissions.

455

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm...

Chen, Ze; Chen, Jin-Da; Zhang, Xiu-Ling; Sun, Zhi-Yu; Huang, Wen-Xue; Wang, Jian-Song; Guo, Zhong-Yan; Xiao, Guo-Qing

2013-01-01T23:59:59.000Z

456

Optimum performance investigation of LYSO crystal pixels: A comparison between GATE simulation and experimental data  

E-Print Network [OSTI]

Monte Carlo simulation plays an important role in the study of time of flight (TOF) positron emission tomography (PET) prototype. As it can incorporate accurate physical modeling of scintillation detection process, from scintillation light generation, the transport of scintillation photos through the crystal(s), to the conversion of these photons into electronic signals. The Geant4 based simulation software GATE can provide a user-friendly simulation platform containing the properties needed. In this work, we developed a dedicated module in GATE simulation tool. Using this module, we simulated the light yield, energy resolution, time resolution of LYSO pixels with the same cross-section ($4\\times4 mm^{2}$) of different lengths: 5 mm, 10 mm, 15 mm, 20 mm, 25 mm, coupled to a PMT. The experiments were performed to validate the GATE simulation results. The results indicate that the best time resolution (484.0$\\pm$67.5 ps) and energy resolution (13.3$\\pm$0.4 %) could be produced by using pixel with length of 5 mm. The module can also be applied to other cases for precisely simulating optical photons propagating in scintillators.

Ze Chen; Zheng-Guo Hu; Jin-Da Chen; Xiu-Ling Zhang; Zhi-Yu Sun; Wen-Xue Huang; Jian-Song Wang; Zhong-Yan Guo; Guo-Qing Xiao

2013-09-15T23:59:59.000Z

457

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors  

SciTech Connect (OSTI)

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (?130?°C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k?=?3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24T23:59:59.000Z

458

Design and optimisation of quantum logic circuits for a three-qubit Deutsch-Jozsa algorithm implemented with optically-controlled, solid-state quantum logic gates  

E-Print Network [OSTI]

We analyse the design and optimisation of quantum logic circuits suitable for the experimental demonstration of a three-qubit quantum computation prototype based on optically-controlled, solid-state quantum logic gates. In these gates, the interaction between two qubits carried by the electron-spin of donors is mediated by the optical excitation of a control particle placed in their proximity. First, we use a geometrical approach for analysing the entangling characteristics of these quantum gates. Then, using a genetic programming algorithm, we develop circuits for the refined Deutsch-Jozsa algorithm investigating different strategies for obtaining short total computational times. We test two separate approaches based on using different sets of entangling gates with the shortest possible gate computation time which, however, does not introduce leakage of quantum information to the control particles. The first set exploits fast approximations of controlled-phase gates as entangling gates, while the other one arbitrary entangling gates with a shorter gate computation time compared to the first set. We have identified circuits with consistently shorter total computation times when using controlled-phase gates.

A. Del Duce; S. Savory; P. Bayvel

2009-10-09T23:59:59.000Z

459

Variation of the shape and morphological properties of silica and metal oxide powders by electro homogeneous precipitation  

DOE Patents [OSTI]

The present invention provides a method for preparing irreversible linear aggregates (fibrils) of metal oxide powders by utilizing static or pulsed DC electrical fields across a relatively non-conducting liquid solvent in which organometal compounds or silicon alkoxides have been dissolved. The electric field is applied to the relatively non-conducting solution throughout the particle formation and growth process promoting the formation of either linear aggregates (fibrils) or spherical shaped particles as desired. Thus the present invention provides a physical method for altering the size, shape and porosity of precursor hydrous metal oxide or hydrous silicon oxide powders for the development of advanced ceramics with improved strength and insulating capacity.

Harris, Michael T. (Knoxville, TN); Basaran, Osman A. (Oak Ridge, TN); Sisson, Warren G. (Oak Ridge, TN); Brunson, Ronald R. (Lenoir City, TN)

1997-01-01T23:59:59.000Z

460

Reaction network and kinetics for the catalytic oxidation of toluene over V sub 2 O sub 5  

SciTech Connect (OSTI)

The oxidation of three methyl-diphenylmethane isomers and of bibenzyl, benzyl alcohol, and benzaldehyde, which are intermediates in the catalytic oxidation of toluene over V{sub 2}O{sub 5}, has been studied to elucidate the reaction network and relative importance of various reactions. Selectivity dependences reveal that the network is composed mainly of three parallel reaction routes: (1) side-chain oxidation with consecutive reactions, (2) oxidative coupling with both parallel and consecutive reactions, and (3) carbon oxide formation. Coupling products are not negligible, with an initial selectivity of 29% (400{degree}C). Anthraquinone is produced mainly from o-methyl-diphenylmethane conditions and catalyst used. Selectivity dependences suggested product lumping and a simplified network. Kinetic analysis of this reaction network indicates that higher temperatures favor route 2 over route 1. The same initial intermediates for route 1 of side-chain oxidation and for route 2 of oxidative coupling are suggested.

Zhu, J.; Andersson, L.T. (Univ. of Lund (Sweden))

1990-11-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect (OSTI)

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

462

Formation of Carbon Dwarfs  

E-Print Network [OSTI]

We consider the formation of dwarf carbon stars via accretion from a carbon AGB companion in light of the new 107 object sample of Downes et al. (2004). This sample is now large enough to allow good mass determination via comparison of a composite spectrum to theoretical atmospheric models. Carbon dwarfs of spectral type M are indeed main sequence M dwarfs with enhanced metallicity and carbon abundance. We also calculate the predicted abundance of both M and of F/G carbon dwarfs, and show that the latter should be falsifiable in the near future.

Charles L. Steinhardt; Dimitar D. Sasselov

2012-01-27T23:59:59.000Z

463

Level Diagram Format Choice  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr MayAtmospheric Optical Depth7-1D: VegetationEquipment Surfaces and Interfaces Sample6, 2011 LawrenceE C HLester toRecalcitrantWhich format

464

Planning and Search Exam format  

E-Print Network [OSTI]

is the frame problem. Revision 5 #12;Exam topics: planning Classical planning. How the problem definitionPlanning and Search Revision Revision 1 #12;Outline Exam format Exam topics How to revise Revision 2 #12;Exam format 4 questions out of 6 same format as 2010-2011 and 2011-2012 exams (on G52PAS

Alechina, Natasha

465

Oxidative stress and oxidative damage in chemical carcinogenesis  

SciTech Connect (OSTI)

Reactive oxygen species (ROS) are induced through a variety of endogenous and exogenous sources. Overwhelming of antioxidant and DNA repair mechanisms in the cell by ROS may result in oxidative stress and oxidative damage to the cell. This resulting oxidative stress can damage critical cellular macromolecules and/or modulate gene expression pathways. Cancer induction by chemical and physical agents involves a multi-step process. This process includes multiple molecular and cellular events to transform a normal cell to a malignant neoplastic cell. Oxidative damage resulting from ROS generation can participate in all stages of the cancer process. An association of ROS generation and human cancer induction has been shown. It appears that oxidative stress may both cause as well as modify the cancer process. Recently association between polymorphisms in oxidative DNA repair genes and antioxidant genes (single nucleotide polymorphisms) and human cancer susceptibility has been shown.

Klaunig, James E., E-mail: jklauni@indiana.edu; Wang Zemin; Pu Xinzhu; Zhou Shaoyu

2011-07-15T23:59:59.000Z

466

Oxidation resistant alloys, method for producing oxidation resistant alloys  

DOE Patents [OSTI]

A method for producing oxidation-resistant austenitic alloys for use at temperatures below 800 C. comprising of: providing an alloy comprising, by weight %: 14-18% chromium, 15-18% nickel, 1-3% manganese, 1-2% molybdenum, 2-4% silicon, 0% aluminum and the balance being iron; heating the alloy to 800 C. for between 175-250 hours prior to use in order to form a continuous silicon oxide film and another oxide film. The method provides a means of producing stainless steels with superior oxidation resistance at temperatures above 700 C. at a low cost

Dunning, John S.; Alman, David E.

2002-11-05T23:59:59.000Z

467

Zinc oxide varistors and/or resistors  

DOE Patents [OSTI]

Varistors and/or resistors that includes doped zinc oxide gel microspheres. The doped zinc oxide gel microspheres preferably have from about 60 to about 95% by weight zinc oxide and from about 5 to about 40% by weight dopants based on the weight of the zinc oxide. The dopants are a plurality of dopants selected from silver salts, boron oxide, silicon oxide and hydrons oxides of aluminum, bismuth, cobalt, chromium, manganese, nickel, and antimony.

Arnold, Jr., Wesley D. (Oak Ridge, TN); Bond, Walter D. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

1993-01-01T23:59:59.000Z

468

ARM - Oxides of Nitrogen  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE:1 First Use of Energy for All Purposes (Fuel and Nonfuel),Feet) Year Jan Feb Mar Apr May JunDatastreamsmmcrcalgovInstrumentsruc Documentation RUC : XDCResearchWarmingMethane BackgroundFacilityOther Aircraft CampaignsOxides

469

Vinpocetine attenuates lipid accumulation and atherosclerosis formation  

SciTech Connect (OSTI)

Highlights: •Vinpocetine attenuates hyperlipidemia-induced atherosclerosis in a mouse model. •Vinpocetine antagonizes ox-LDL uptake and accumulation in macrophages. •Vinpocetine blocks the induction of ox-LDL receptor LOX-1 in vitro and in vivo. -- Abstract: Atherosclerosis, the major cause of myocardial infarction and stroke, is a chronic arterial disease characterized by lipid deposition and inflammation in the vessel wall. Cholesterol, in low-density lipoprotein (LDL), plays a critical role in the pathogenesis of atherosclerosis. Vinpocetine, a derivative of the alkaloid vincamine, has long been used as a cerebral blood flow enhancer for treating cognitive impairment. Recent study indicated that vinpocetine is a potent anti-inflammatory agent. However, its role in the pathogenesis of atherosclerosis remains unexplored. In the present study, we show that vinpocetine significantly reduced atherosclerotic lesion formation in ApoE knockout mice fed with a high-fat diet. In cultured murine macrophage RAW264.7 cells, vinpocetine markedly attenuated oxidized LDL (ox-LDL) uptake and foam cell formation. Moreover, vinpocetine greatly blocked the induction of ox-LDL receptor 1 (LOX-1) in cultured macrophages as well as in the LOX-1 level in atherosclerotic lesions. Taken together, our data reveal a novel role of vinpocetine in reduction of pathogenesis of atherosclerosis, at least partially through suppressing LOX-1 signaling pathway. Given the excellent safety profile of vinpocetine, this study suggests vinpocetine may be a therapeutic candidate for treating atherosclerosis.

Cai, Yujun [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States)] [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States); Li, Jian-Dong [Center for Inflammation, Immunity and Infection, and Department of Biology, Georgia State University, Atlanta, GA 30303 (United States)] [Center for Inflammation, Immunity and Infection, and Department of Biology, Georgia State University, Atlanta, GA 30303 (United States); Yan, Chen, E-mail: Chen_Yan@urmc.rochester.edu [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States)] [Aab Cardiovascular Research Institute, Department of Medicine, University of Rochester, 601 Elmwood Ave, Rochester, NY 14642 (United States)

2013-05-10T23:59:59.000Z

470

Implementation of controlled phase shift gates and Collins version of Deutsch-Jozsa algorithm on a quadrupolar spin-7/2 nucleus using non-adiabatic geometric phases  

E-Print Network [OSTI]

In this work Controlled phase shift gates are implemented on a qaudrupolar system, by using non-adiabatic geometric phases. A general procedure is given, for implementing controlled phase shift gates in an 'N' level system. The utility of such controlled phase shift gates, is demonstrated here by implementing 3-qubit Deutsch-Jozsa algorithm on a 7/2 quadrupolar nucleus oriented in a liquid crystal matrix.

T. Gopinath; Anil Kumar

2009-09-22T23:59:59.000Z

471

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

SciTech Connect (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

472

Enhanced Thermal Conductivity Oxide Fuels  

SciTech Connect (OSTI)

the purpose of this project was to investigate the feasibility of increasing the thermal conductivity of oxide fuels by adding small fractions of a high conductivity solid phase.

Alvin Solomon; Shripad Revankar; J. Kevin McCoy

2006-01-17T23:59:59.000Z

473

Continuous lengths of oxide superconductors  

DOE Patents [OSTI]

A layered oxide superconductor prepared by depositing a superconductor precursor powder on a continuous length of a first substrate ribbon. A continuous length of a second substrate ribbon is overlaid on the first substrate ribbon. Sufficient pressure is applied to form a bound layered superconductor precursor powder between the first substrate ribbon and the second substrate ribbon. The layered superconductor precursor is then heat treated to establish the oxide superconducting phase. The layered oxide superconductor has a smooth interface between the substrate and the oxide superconductor.

Kroeger, Donald M. (Knoxville, TN); List, III, Frederick A. (Andersonville, TN)

2000-01-01T23:59:59.000Z

474

Buried oxide layer in silicon  

DOE Patents [OSTI]

A process for forming Silicon-On-Insulator is described incorporating the steps of ion implantation of oxygen into a silicon substrate at elevated temperature, ion implanting oxygen at a temperature below 200.degree. C. at a lower dose to form an amorphous silicon layer, and annealing steps to form a mixture of defective single crystal silicon and polycrystalline silicon or polycrystalline silicon alone and then silicon oxide from the amorphous silicon layer to form a continuous silicon oxide layer below the surface of the silicon substrate to provide an isolated superficial layer of silicon. The invention overcomes the problem of buried isolated islands of silicon oxide forming a discontinuous buried oxide layer.

Sadana, Devendra Kumar (Pleasantville, NY); Holland, Orin Wayne (Lenoir, TN)

2001-01-01T23:59:59.000Z

475

Formation, characterization and reactivity of adsorbed oxygen...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

Formation, characterization and reactivity of adsorbed oxygen on BaOPt(111). Formation, characterization and reactivity of adsorbed oxygen on BaOPt(111). Abstract: The formation...

476

CHEMISTRY OF SO2 AND DESOX PROCESSES ON OXIDE NANOPARTICLES.  

SciTech Connect (OSTI)

On bulk stoichiometric oxides, SO{sub 2} mainly reacts with the O centers to form SO{sub 3} or SO{sub 4} species that decompose at elevated temperatures. Adsorption on the metal cations occurs below 300 K and does not lead to cleavage of the S-O bonds. In bulk oxides, the occupied cation bands are too stable for effective bonding interactions with the LUMO of SO{sub 2}. The effects of quantum confinement on the electronic properties of oxide nanoparticles and the structural defects that usually accompany these systems in general favor the bonding and dissociation of SO{sub 2}. Thus, nanoparticles of MgO, CaO, SrO, Al{sub 2}O{sub 3}, Fe{sub 2}O{sub 3} and CeO{sub 2} are all more efficient for sequestering SO{sub 2} than the corresponding bulk oxides. Structural imperfections in pure or metal-doped ceria nanoparticles accelerate the reduction of SO{sub 2} by CO by facilitating the formation and migration of O vacancies in the oxide surface.

RODRIGUEZ, J.A.

2006-06-30T23:59:59.000Z

477

Downhole steam generator having a downhole oxidant compressor  

DOE Patents [OSTI]

Apparatus and method for generation of steam in a borehole for penetration into an earth formation wherein a downhole oxidant compressor is used to compress relatively low pressure (atmospheric) oxidant, such as air, to a relatively high pressure prior to mixing with fuel for combustion. The multi-stage compressor receives motive power through a shaft driven by a gas turbine powered by the hot expanding combustion gases. The main flow of compressed oxidant passes through a velocity increasing nozzle formed by a reduced central section of the compressor housing. An oxidant bypass feedpipe leading to peripheral oxidant injection nozzles of the combustion chamber are also provided. The downhole compressor allows effective steam generation in deep wells without need for high pressure surface compressors. Feedback preheater means are provided for preheating fuel in a preheat chamber. Preheating of the water occurs in both a water feed line running from aboveground and in a countercurrent water flow channel surrounding the combustor assembly. The countercurrent water flow channels advantageously serve to cool the combustion chamber wall. The water is injected through slotted inlets along the combustion chamber wall to provide an unstable boundary layer and stripping of the water from the wall for efficient steam generation. Pressure responsive doors are provided at the steam outlet for closing and sealing the combustion chamber from entry of reservoir fluids in the event of a flameout.

Fox, Ronald L. (Albuquerque, NM)

1983-01-01T23:59:59.000Z

478

High power density solid oxide fuel cells  

DOE Patents [OSTI]

A method for producing ultra-high power density solid oxide fuel cells (SOFCs). The method involves the formation of a multilayer structure cells wherein a buffer layer of doped-ceria is deposited intermediate a zirconia electrolyte and a cobalt iron based electrode using a colloidal spray deposition (CSD) technique. For example, a cobalt iron based cathode composed of (La,Sr)(Co,Fe)O (LSCF) may be deposited on a zirconia electrolyte via a buffer layer of doped-ceria deposited by the CSD technique. The thus formed SOFC have a power density of 1400 mW/cm.sup.2 at 600.degree. C. and 900 mW/cm.sup.2 at 700.degree. C. which constitutes a 2-3 times increased in power density over conventionally produced SOFCs.

Pham, Ai Quoc; Glass, Robert S.

2004-10-12T23:59:59.000Z

479

A study on the oxidation characteristics of cast irons containing aluminum  

SciTech Connect (OSTI)

Isothermal-oxidation characteristics of cast irons containing aluminum (5-15% Al) from 700 to 1000{degrees}C in air have been studied. In addition to mass-gain measurements, the morphology and composition of the oxide scales have been examined by SEM-EDX system and XRD analysis. A normal Fe-5Al-C alloy does not develop protective, adherent scales. Even the addition of misch metal and calcium silicide to such an alloy does not improve its oxidation resistance. But aluminum cast iron develops considerable oxidation resistance only when a sufficient quantity of silicon is also present in the alloy. Treatment of the alloy with misch metal and calcium silicide together assists in protective scale formation. Among the alloys investigated Fe-15Al-Si-C treated with misch metal and calcium silicide shows minimum oxidation at 1000{degrees}C.

Ghosh, S.; Prodhan, A. [National Metallurigical Laboratory, Jamshedpur (India); Mohanty, O.N. [Tata Steel, Jamshedpur (India)] [and others

1996-02-01T23:59:59.000Z

480

Operation of staged membrane oxidation reactor systems  

SciTech Connect (OSTI)

A method of operating a multi-stage ion transport membrane oxidation system. The method comprises providing a multi-stage ion transport membrane oxidation system with at least a first membrane oxidation stage and a second membrane oxidation stage, operating the ion transport membrane oxidation system at operating conditions including a characteristic temperature of the first membrane oxidation stage and a characteristic temperature of the second membrane oxidation stage; and controlling the production capacity and/or the product quality by changing the characteristic temperature of the first membrane oxidation stage and/or changing the characteristic temperature of the second membrane oxidation stage.

Repasky, John Michael

2012-10-16T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


481

Synthesis and electrochemical capacitance of long tungsten oxide nanorod arrays grown vertically on substrate  

SciTech Connect (OSTI)

Highlights: ? Growth of long amorphous tungsten oxide nanorods on a substrate. ? Formation of single-crystalline tungsten oxide nanorods by a heat-treatment. ? High electrochemical pseudocapacitance of 2.8 mF cm{sup ?2}. ? Excellent cyclability of psuedocapacitance up to 1000 cycles. -- Abstract: Long tungsten oxide nanorods are vertically grown on Al/W/Ti coated silicon substrates using a two-step anodization process. The first anodization of the Al film forms a mesh-like mask of anodic aluminum oxide, and the second anodization of the W film results in the formation of a buffer layer, a bottom nanorod, and a top nanorod of amorphous tungsten oxide. A pore-widening process prior to the second anodization leads to the enhancement of nanorod length above approximately 500 nm. After a heat-treatment, the tungsten oxide nanorods are crystallized to form a single crystalline structure while the buffer layer forms a polycrystalline structure. The crystalline tungsten oxide nanorods show a cyclic voltammogram retaining the quasi-rectangular shape of an electrochemically reversible faradaic redox reaction, i.e., a typical pseudocapacitive behavior. The maximum electrochemical capacitance per apparent surface area reaches approximately 2.8 mF cm{sup ?2} at the voltage scan rate of 20 mV s{sup ?1}, and the excellent cyclability of charge–discharge process is maintained up to 1000 cycles.

Park, Sun Hwa [Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of)] [Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of); Kim, Young Heon; Lee, Tae Geol; Shon, Hyun Kyong [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of)] [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Park, Hyun Min [Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of) [Department of Nanomaterials Science and Engineering, University of Science and Technology, Daejeon 305-350 (Korea, Republic of); Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Song, Jae Yong, E-mail: jysong@kriss.re.kr [Korea Research Institute of Standards and Science, Daejeon 305-340 (Korea, Republic of); Department of Nano Science, University of Science and Technology, Daejeon 305-350 (Korea, Republic of)

2012-11-15T23:59:59.000Z

482

(Non) formation of methanol by direct hydrogenation of formate...  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

produces significant quantities of methanol, although decomposition of formate to carbon dioxide and hydrogen remains the dominant reaction pathway. Simultaneous production...

483

Low Temperature Constrained Sintering of Cerium Gadolinium Oxide Films for Solid Oxide Fuel Cell Applications  

E-Print Network [OSTI]

Temperature Solid Oxide Fuel Cells, In: S.C. Singhal and M.Tubular Solid Oxide Fuel Cell Technology, U.S. Department ofOxide Films for Solid Oxide Fuel Cell Applications by Jason

Nicholas, Jason.D.

2007-01-01T23:59:59.000Z

484

Method for producing nanostructured metal-oxides  

DOE Patents [OSTI]

A synthetic route for producing nanostructure metal-oxide-based materials using sol-gel processing. This procedure employs the use of stable and inexpensive hydrated-metal inorganic salts and environmentally friendly solvents such as water and ethanol. The synthesis involves the dissolution of the metal salt in a solvent followed by the addition of a proton scavenger, which induces gel formation in a timely manner. Both critical point (supercritical extraction) and atmospheric (low temperature evaporation) drying may be employed to produce monolithic aerogels and xerogels, respectively. Using this method synthesis of metal-oxide nanostructured materials have been carried out using inorganic salts, such as of Fe3+, Cr3+, Al3+, Ga3+, In3+, Hf4+, Sn4+, Zr4+, Nb5+, W6+, Pr3+, Er3+, Nd3+, Ce3+, U3+ and Y3+. The process is general and nanostructured metal-oxides from the following elements of the periodic table can be made: Groups 2 through 13, part of Group 14 (germanium, tin, lead), part of Group 15 (antimony, bismuth), part of Group 16 (polonium), and the lanthanides and actinides. The sol-gel processing allows for the addition of insoluble materials (e.g., metals or polymers) to the viscous sol, just before gelation, to produce a uniformly distributed nanocomposites upon gelation. As an example, energetic nanocomposites of FexOy gel with distributed Al metal are readily made. The compositions are stable, safe, and can be readily ignited to thermitic reaction.

Tillotson, Thomas M.; Simpson, Randall L.; Hrubesh, Lawrence W.; Gash, Alexander

2006-01-17T23:59:59.000Z

485

Halogen-Based Plasma Etching of Novel Field-Effect Transistor Gate Materials  

E-Print Network [OSTI]

Surface Interactions in Fluorocarbon Etching of Silicon2706. Xu, S.L. , et al. , Fluorocarbon polymer formation,

Kiehlbaugh, Kasi Michelle

2009-01-01T23:59:59.000Z

486

Universal conductance fluctuations in electrolyte-gated SrTiO{sub 3} nanostructures  

SciTech Connect (OSTI)

We report low-temperature magnetoconductance measurements of a patterned two-dimensional electron system at the surface of strontium titanate, gated by an ionic liquid electrolyte. We observe universal conductance fluctuations, a signature of phase-coherent transport in mesoscopic devices. From the universal conductance fluctuations, we extract an electron dephasing rate linear in temperature, characteristic of electron-electron interaction in a disordered conductor. The dephasing rate has a temperature-independent offset, which could possibly be explained by the presence of unscreened local magnetic moments in the sample.

Stanwyck, Sam W. [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Applied Physics, Stanford University, Stanford, California 94305 (United States); Gallagher, P.; Williams, J. R.; Goldhaber-Gordon, David [Department of Physics, Stanford University, Stanford, California 94305 (United States)] [Department of Physics, Stanford University, Stanford, California 94305 (United States)

2013-11-18T23:59:59.000Z

487

Excitation spectrum as a resource for efficient two-qubit entangling gates  

E-Print Network [OSTI]

Physical systems representing qubits typically have one or more accessible quantum states in addition to the two states that encode the qubit. We demonstrate that active involvement of such auxiliary states can be beneficial in constructing entangling two-qubit operations. We investigate the general case of two multi-state quantum systems coupled via a quantum resonator. The approach is illustrated with the examples of three systems: self-assembled InAs/GaAs quantum dots, NV-centers in diamond, and superconducting transmon qubits. Fidelities of the gate operations are calculated based on numerical simulations of each system.

Dmitry Solenov; Sophia E. Economou; Thomas L. Reinecke

2014-04-03T23:59:59.000Z

488

Field programmable gate array-assigned complex-valued computation and its limits  

SciTech Connect (OSTI)

We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.

Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria); Zwick, Wolfgang; Klier, Jochen [National Instruments, Ganghoferstrasse 70b, 80339 Munich (Germany); Wenzel, Lothar [National Instruments, 11500 N MOPac Expy, Austin, Texas 78759 (United States); Gröschl, Martin [Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien (Austria)

2014-09-15T23:59:59.000Z

489

Reducing the contribution of the power sector to ground-level ozone pollution : an assessment of time-differentiated pricing of nitrogen oxide emissions  

E-Print Network [OSTI]

Nitrogen oxide (NOx) is a prevalent air pollutant across the United States and a requisite precursor for tropospheric (ground-level) ozone formation. Both pollutants significantly impact human health and welfare, so National ...

Craig, Michael T. (Michael Timothy)

2014-01-01T23:59:59.000Z

490

A cost-effectiveness analysis of alternative ozone control strategies : flexible nitrogen oxide (NOx) abatement from power plants in the eastern United States  

E-Print Network [OSTI]

Ozone formation is a complex, non-linear process that depends on the atmospheric concentrations of its precursors, nitrogen oxide (NOx) and Volatile Organic Compounds (VOC), as well as on temperature and the available ...

Sun, Lin, S.M. Massachusetts Institute of Technology

2009-01-01T23:59:59.000Z

491

Metal oxide films on metal  

DOE Patents [OSTI]

A structure including a thin film of a conductive alkaline earth metal oxide selected from the group consisting of strontium ruthenium trioxide, calcium ruthenium trioxide, barium ruthenium trioxide, lanthanum-strontium cobalt oxide or mixed alkaline earth ruthenium trioxides thereof upon a thin film of a noble metal such as platinum is provided.

Wu, Xin D. (Los Alamos, NM); Tiwari, Prabhat (Los Alamos, NM)

1995-01-01T23:59:59.000Z

492

METHANE OXIDATION (AEROBIC) Helmut Brgmann  

E-Print Network [OSTI]

METHANE OXIDATION (AEROBIC) Helmut Bürgmann Eawag, Swiss Federal Institute of Aquatic Science and Technology, Kastanienbaum, Switzerland Synonyms Methanotrophy Definition Methane oxidation is a microbial metabolic process for energy generation and carbon assimilation from methane that is carried out by specific

Wehrli, Bernhard

493

Ultra Supercritical Steamside Oxidation  

SciTech Connect (OSTI)

Ultra supercritical (USC) power plants offer the promise of higher efficiencies and lower emissions, which are goals of the U.S. Department of Energy's Advanced Power Systems Initiatives. Most current coal power plants in the U.S. operate at a maximum steam temperature of 538 C. However, new supercritical plants worldwide are being brought into service with steam temperatures of up to 620 C. Current Advanced Power Systems goals include coal generation at 60% efficiency, which require steam temperatures of up to 760 C. This research examines the steamside oxidation of advanced alloys for use in USC systems, with emphasis placed on alloys for high- and intermediate-pressure turbine sections. Initial results of this research are presented.

Holcomb, Gordon R.; Cramer, Stephen D.; Covino, Bernard S., Jr.; Bullard, Sophie J.; Ziomek-Moroz, Malgorzata

2005-01-01T23:59:59.000Z

494

Thermal oxidation of polycrystalline and single crystalline aluminum nitride wafers (Prop 2003-054)  

SciTech Connect (OSTI)

Two types of aluminum nitride (AlN) samples were oxidized in flowing oxygen between 900 C and 1150 C for up to 6 h - highly (0001) textured polycrystalline AlN wafers and low defect density AlN single crystals. The N-face consistently oxidized at a faster rate than the Al-face. At 900 C and 1000 C after 6 h, the oxide was 15% thicker on the N-face than on the Al-face of polycrystalline AlN. At 1100 C and 1150 C, the oxide was only 5% thicker on the N-face, as the rate-limiting step changed from kinetically-controlled to diffusion-controlled with the oxide thickness. A linear parabolic model was established for the thermal oxidation of polycrystalline AlN on both the Al- and N-face. Transmission electron microscopy (TEM) confirmed the formation of a thicker crystalline oxide film on the N-face than on the Al-face, and established the crystallographic relationship between the oxide film and substrate. The oxidation of high-quality AlN single crystals resulted in a more uniform colored oxide layer compared to polycrystalline AlN. The aluminum oxide layer was crystalline with a rough AlN/oxide interface. The orientation relationship between AlN and Al{sub 2}O{sub 3} was (0001) AlN//(10{bar 1}0) Al{sub 2}O{sub 3} and (1{bar 1}00) AlN//(01{bar 1}2) Al{sub 2}O{sub 3}.

Speakman, Scott A [ORNL; Gu, Z [Kansas State University; Edgar, J H [Kansas State University; Blom, Douglas Allen [ORNL; Perrin, J [Kansas State University; Chaudhuri, J [Kansas State University

2006-10-01T23:59:59.000Z

495

MODELING AND SIMULATION OF FINGERING PATTERN FORMATION IN A COMBUSTION MODEL  

E-Print Network [OSTI]

MODELING AND SIMULATION OF FINGERING PATTERN FORMATION IN A COMBUSTION MODEL LINA HU, CLAUDE-MICHEL BRAUNER, JIE SHEN, AND GREGORY I. SIVASHINSKY Abstract. We consider a model of gas-solid combustion background. Combustion is basically a process of fast oxidation accompanied by substantial heat release

Paris-Sud XI, Université de

496

FORMATION GESTION DU STRESS CONTEXTE, PUBLIC, FINALITE DE LA FORMATION  

E-Print Network [OSTI]

FORMATION GESTION DU STRESS CONTEXTE, PUBLIC, FINALITE DE LA FORMATION La vie moderne et le stress : mettre en place des stratégies de gestion , étudier quelques aspects essentiels de la et cas cliniques composés par les participants ou fournis par le formateur . - Jeux de rôle en sous

Brest, Université de

497

Detection of oxidation in human serum lipoproteins  

E-Print Network [OSTI]

A method for the oxidation of lipoproteins in vitro was developed using the free radical initiator, 2,2?-azobis-(2-amidinopropane) dihydrochloride (AAPH). Following in vitro oxidation, the susceptibility to oxidation of the serum samples...

Myers, Christine Lee

2006-04-12T23:59:59.000Z

498

Physics of gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors  

SciTech Connect (OSTI)

A physics based model of the gate leakage current in N-polar InAlN/GaN heterojunction field effect transistors is demonstrated. The model is based on the space charge limited current flow dominated by the effects of deep traps in the InAlN surface layer. The model predicts accurately the gate-leakage measurement data of the N-polar InAlN/GaN device with InAlN cap layer. In the pinch-off state, the gate leakage current conduction through the surface of the device in the drain access region dominates the current flow through the two dimensional electron gas channel. One deep trap level and two levels of shallow traps are extracted by fitting the model results with measurement data.

Goswami, Arunesh; Trew, Robert J.; Bilbro, Griff L. [ECE Department, Box 7911, North Carolina State University, Raleigh, North Carolina 27695-7911 (United States)

2014-10-28T23:59:59.000Z

499

Electron Transport Behavior on Gate Length Scaling in Sub-50 nm GaAs Metal Semiconductor Field Effect Transistors  

SciTech Connect (OSTI)

Short channel GaAs Metal Semiconductor Field Effect Transistors (MESFETs) have been fabricated with gate length to 20 nm, in order to examine the characteristics of sub-50 nm MESFET scaling. Here the rise in the measured transconductance is mainly attributed to electron velocity overshoot. For gate lengths below 40 nm, however, the transconductance drops suddenly. The behavior of velocity overshoot and its degradation is investigated and simulated by using a transport model based on the retarded Langevin equation (RLE). This indicates the existence of a minimum acceleration length needed for the carriers to reach the overshoot velocity. The argument shows that the source resistance must be included as an internal element, or appropriate boundary condition, of relative importance in any model where the gate length is comparable to the inelastic mean free path of the carriers.

Han, Jaeheon [Department of Electronic Engineering, Kangnam University, 111 Gugal-dong, Giheung-gu, Yongin-city, Gyeonggi-do, Korea 446-702 (Korea, Republic of)

2011-12-23T23:59:59.000Z

500

Gate Access  

Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

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