Sample records for gate oxide formation

  1. TIME DEPENDENT BREAKDOWN OF GATE OXIDE AND PREDICTION OF OXIDE GATE LIFETIME

    E-Print Network [OSTI]

    Mahmoodi, Hamid

    TIME DEPENDENT BREAKDOWN OF GATE OXIDE AND PREDICTION OF OXIDE GATE LIFETIME A thesis submitted Masters of Science In Engineering: Embedded System by Bin Wu San Francisco, California May, 2012 #12;CERTIFICATION OF APPROVAL I certify that I have read Time dependent Breakdown of Gate Oxide and Prediction

  2. Tradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits

    E-Print Network [OSTI]

    Sapatnekar, Sachin

    lead to gate oxide leakage current (Igate), are coming into play from the 90nm node onwards. AccordingTradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits Anup Kumar Sultania Department of ECE University of Minnesota Minneapolis, MN 55455. sachin@ece.umn.edu ABSTRACT Gate oxide

  3. Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects on Inverter Performance and MOSFETEffects on Inverter Performance and MOSFET

    E-Print Network [OSTI]

    Anlage, Steven

    1 Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3.2 nm Gate Oxides: Effects--Thin GateThin Gate Oxide DegradationOxide Degradation #12;2 AcknowledgmentsAcknowledgments University), ECE Miles Wiscombe (UG), ECE #12;3 Part I:Part I: Degradation in 3.2 nm Gate Oxides:Degradation in 3

  4. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology 

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25T23:59:59.000Z

    A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The ...

  5. Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in

    E-Print Network [OSTI]

    Lipasti, Mikko H.

    affect device performance and lead to timing violations; as well as gate-oxide wearout [3] which can probability of oxide breakdown, leading to a hard failure of a device that exceeds its intended (or targetedAbstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause

  6. Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive Layer Assisted Deposition. Cryogenic CO2 Formation on Oxidized Gold Clusters Synthesized via Reactive...

  7. Effects of photochemical formation of mercuric oxide

    SciTech Connect (OSTI)

    Granite, E.J.; Pennline, H.W.; Hoffman, J.S.

    1999-12-01T23:59:59.000Z

    The photochemistry of elemental mercury and oxygen was examined using quartz flow reactors. Germicidal bulbs were used as the source of 253.7-nm ultraviolet radiation. The formation of mercuric oxide, as visually detected by yellow-brown stains on the quartz walls, was confirmed by both ICP-AES and SEM-EDX analyses. In addition, a high surface area calcium silicate sorbent was used to capture the mercuric oxide in one of the experiments. The implications of mercuric oxide formation with respect to analysis of gases for mercury content, atmospheric reactions, and direct ultraviolet irradiation of flue gas for mercury sequestration are discussed.

  8. In situ oxidation of subsurface formations

    DOE Patents [OSTI]

    Beer, Gary Lee (Houston, TX); Mo, Weijian (Sugar Land, TX); Li, Busheng (Houston, TX); Shen, Chonghui (Calgary, CA)

    2011-01-11T23:59:59.000Z

    Methods and systems for treating a hydrocarbon containing formation described herein include providing heat to a first portion of the formation from a plurality of heaters in the first portion, producing produced through one or more production wells in a second portion of the formation, reducing or turning off heat provided to the first portion after a selected time, providing an oxidizing fluid through one or more of the heater wells in the first portion, providing heat to the first portion and the second portion through oxidation of at least some hydrocarbons in the first portion, and producing fluids through at least one of the production wells in the second portion. The produced fluids may include at least some oxidized hydrocarbons produced in the first portion.

  9. Aromatics oxidation and soot formation in flames

    SciTech Connect (OSTI)

    Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T. [Massachusetts Institute of Technology, Cambridge (United States)

    1993-12-01T23:59:59.000Z

    This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify and to determine or confirm rate constants for the main benzene oxidation reactions in flames, and to characterize fullerenes and their formation mechanisms and kinetics.

  10. Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing an interfacial silica consumption reaction

    E-Print Network [OSTI]

    Garfunkel, Eric

    Lanthanum silicate gate dielectric stacks with subnanometer equivalent oxide thickness utilizing-8087 Received 13 April 2005; accepted 6 June 2005; published online 26 July 2005 A silicate reaction between process route to interface elimination, while producing a silicate dielectric with a higher temperature

  11. Aromatics oxidation and soot formation in flames

    SciTech Connect (OSTI)

    Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T.

    1993-04-01T23:59:59.000Z

    This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify, and to confirm or determine rate constants for, the main benzene oxidation reactions in flames, and to characterize soot and fullerenes and their formation mechanisms and kinetics. Stable and radical species profiles in the aromatics oxidation study are measured using molecular beam sampling with on-line mass spectrometry. The rate of soot formation measured by conventional optical techniques is found to support the hypotheses that particle inception occurs through reactive coagulation of high molecular weight PAH in competition with destruction by OHattack, and that the subsequent growth of the soot mass occurs through addition reactions of PAH and C[sub 2]H[sub 2] with the soot particles. During the first year of this reporting period, fullerenes C[sub 60] and C[sub 70] in substantial quantities were found in the flames being studied. The fullerenes were recovered, purified and spectroscopically identified. The yields of C[sub 60] and C[sub 70] were then determined over ranges of conditions in low-pressure premixed flames of benzene and oxygen.

  12. P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide

    E-Print Network [OSTI]

    P-31 / Schlott P-31: Nodule Formation on Indium-Oxide Tin-Oxide Sputtering Targets M. Schlott, M from indium-oxide tin-oxide (ITO) targets [1]. Unfor- tunately, black growths, or nodules, commonly isostatic pressing partly reduced powder mixtures of 90 wt.% indium-oxide and 10 wt.% tin-oxide [4

  13. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    that conducts current and permits control of the electron flow between the source and drain electrodes of the transistor. This layer is traditionally made of silicon dioxide but...

  14. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |Is Your HomeLatestCenterLogging in LoggingLong-TermJefferson

  15. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |Is Your HomeLatestCenterLogging in LoggingLong-TermJeffersonLooking

  16. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC)Integrated Codes |Is Your HomeLatestCenterLogging in

  17. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let usNucleartearingLongTermSchool

  18. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let usNucleartearingLongTermSchoolLooking at

  19. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let usNucleartearingLongTermSchoolLooking

  20. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let usNucleartearingLongTermSchoolLookingLooking

  1. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOEThe Bonneville PowerCherries 82981-1cnHigh SchoolIn12electron 9 5Let

  2. Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-on-Insulator MetalOxideSemiconductor Field-Effect-Transistors

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    ) and the back-gate oxide (tb) thickness is 2 nm. The doping in the p-type body and n+ source/drain regions­Oxide­Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential M. Jagadesh KUMAR Ã and G. Venkateshwar surface potential profile at the back gate of an asymmetrical double gate (DG) silicon-on-insulator (SOI

  3. Native point defects in yttria and relevance to its use as a high-dielectric-constant gate oxide material: First-principles study

    E-Print Network [OSTI]

    Ceder, Gerbrand

    a promising gate oxide material to replace silicon dioxide in metal-oxide- semiconductor devices. Using-earth-doped lasers. Recently, Y2O3 has re- ceived attention as a promising candidate for replacing sili- con dioxide SiO2 as a gate dielectric material in metal- oxide-semiconductor MOS transistors.1­10 The continual

  4. Heating subsurface formations by oxidizing fuel on a fuel carrier

    DOE Patents [OSTI]

    Costello, Michael; Vinegar, Harold J.

    2012-10-02T23:59:59.000Z

    A method of heating a portion of a subsurface formation includes drawing fuel on a fuel carrier through an opening formed in the formation. Oxidant is supplied to the fuel at one or more locations in the opening. The fuel is combusted with the oxidant to provide heat to the formation.

  5. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23T23:59:59.000Z

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  6. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors

    E-Print Network [OSTI]

    Florida, University of

    energy loss spectroscopy [23]. In contrast, HEMTs utilizing a Pt liner layer did not show the same gate electrical contact to the 2DEG. However, when stressing occurs in O2 or air, the O2 present reacts

  7. Formation of metal oxides by cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

    1995-03-01T23:59:59.000Z

    Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

  8. Study of gate oxide traps in HfO[subscript 2]/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors by use of ac transconductance method

    E-Print Network [OSTI]

    Sun, X.

    We introduce an ac-transconductance method to profile the gate oxide traps in a HfO[subscript 2] gated AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) that can exchange carriers with metal ...

  9. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01T23:59:59.000Z

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  10. Water-induced Formation of Cobalt Oxides Over SupportedCobalt...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Oxides Over Supported CobaltCeria-Zirconia Catalysts under Ethanol-Steam Conditions. Water-induced Formation of Cobalt Oxides Over Supported CobaltCeria-Zirconia Catalysts...

  11. High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics

    E-Print Network [OSTI]

    Pecunia, Vincenzo; Banger, Kulbinder; Sirringhaus, Henning

    2015-01-13T23:59:59.000Z

    energy offsets (? 1 eV) between the conduction/valence bands of the semiconductor and the gate dielectric are needed to confine the charge carriers at the active interface and minimize undesirable charge injection from the semiconductor into the gate... in solution, all the other polymers came in the form of pellets or powder and were dissolved in suitable anhydrous organic solvents: P?MS was dissolved in xylene at a concentration of 60 mg mL-1; SAN in butyronitrile at 40 mg mL-1; PC in 1,2-dichlorobenzene...

  12. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25T23:59:59.000Z

    of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 Ã?Â? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped Ta...

  13. RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs

    E-Print Network [OSTI]

    Pearton, Stephen J.

    .16 These transparent conducting oxides may also be used as electrodes in solar cells and flat-panel

  14. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films

    E-Print Network [OSTI]

    Lin, Chen-Han

    2012-10-19T23:59:59.000Z

    , can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method...

  15. Formation of low resistivity titanium silicide gates in semiconductor integrated circuits

    DOE Patents [OSTI]

    Ishida, Emi (Sunnyvale, CA)

    1999-08-10T23:59:59.000Z

    A method of forming a titanium silicide (69) includes the steps of forming a transistor having a source region (58), a drain region (60) and a gate structure (56) and forming a titanium layer (66) over the transistor. A first anneal is performed with a laser anneal at an energy level that causes the titanium layer (66) to react with the gate structure (56) to form a high resistivity titanium silicide phase (68) having substantially small grain sizes. The unreacted portions of the titanium layer (66) are removed and a second anneal is performed, thereby causing the high resistivity titanium silicide phase (68) to convert to a low resistivity titanium silicide phase (69). The small grain sizes obtained by the first anneal allow low resistivity titanium silicide phase (69) to be achieved at device geometries less than about 0.25 micron.

  16. Nonvolatile memory disturbs due to gate and junction leakage currents

    E-Print Network [OSTI]

    Schroder, Dieter K.

    ) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge; accepted 10 September 2002 Abstract We address disturbs due to gate oxide and junction leakage currents in floating gate nonvolatile memories (NVM). The junction leakage is important, because the gate oxide current

  17. Formation of hydroxylamine on dust grains via ammonia oxidation

    E-Print Network [OSTI]

    He, Jiao; Lemaire, Jean-Louis; Garrod, Robin T

    2015-01-01T23:59:59.000Z

    The quest to detect prebiotic molecules in space, notably amino acids, requires an understanding of the chemistry involving nitrogen atoms. Hydroxylamine (NH$_2$OH) is considered a precursor to the amino acid glycine. Although not yet detected, NH$_2$OH is considered a likely target of detection with ALMA. We report on an experimental investigation of the formation of hydroxylamine on an amorphous silicate surface via the oxidation of ammonia. The experimental data are then fed into a simulation of the formation of NH$_2$OH in dense cloud conditions. On ices at 14 K and with a modest activation energy barrier, NH$_2$OH is found to be formed with an abundance that never falls below a factor 10 with respect to NH$_3$. Suggestions of conditions for future observations are provided.

  18. Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from SiH4 and N2O

    E-Print Network [OSTI]

    Rubloff, Gary W.

    Process sensing and metrology in gate oxide growth by rapid thermal chemical vapor deposition from for Advanced Electronic Materials Processing, North Carolina State University, Raleigh, North Carolina 27695-7920 Received 7 January 1999; accepted 21 May 1999 Active sampling mass spectrometry has been used for process

  19. Zirconium-doped tantalum oxide high-k gate dielectric films 

    E-Print Network [OSTI]

    Tewg, Jun-Yen

    2005-02-17T23:59:59.000Z

    A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new ...

  20. Zirconium-doped tantalum oxide high-k gate dielectric films

    E-Print Network [OSTI]

    Tewg, Jun-Yen

    2005-02-17T23:59:59.000Z

    A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new dielectric material include...

  1. Solution mining and heating by oxidation for treating hydrocarbon containing formations

    DOE Patents [OSTI]

    Vinegar, Harold J. (Bellaire, TX); Stegemeier, George Leo (Houston, TX)

    2009-06-23T23:59:59.000Z

    A method for treating an oil shale formation comprising nahcolite includes providing a first fluid to a portion of the formation. A second fluid is produced from the portion. The second fluid includes at least some nahcolite dissolved in the first fluid. A controlled amount of oxidant is provided to the portion of the formation. Hydrocarbon fluids are produced from the formation.

  2. Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes

    E-Print Network [OSTI]

    Nair, Sankar

    made from metal oxides -- work that could lead to a technique for precisely conNanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes Science their diameter and length. Based on metal oxides in combination with silicon and germanium, such single

  3. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S. [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Kodera, T., E-mail: kodera.t.ac@m.titech.ac.jp [Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-NE-25, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan); PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012 (Japan); Takeda, K.; Obata, T. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Tarucha, S. [Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); RIKEN, Center for Emergent Matter Science (CEMS), 2-1, Hirosawa, Wako, Saitama 351-0198 (Japan)

    2014-05-28T23:59:59.000Z

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  4. Formation of thin walled ceramic solid oxide fuel cells

    DOE Patents [OSTI]

    Claar, Terry D. (Tisle, IL); Busch, Donald E. (Hinsdale, IL); Picciolo, John J. (Lockport, IL)

    1989-01-01T23:59:59.000Z

    To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

  5. Porous anodic aluminum oxide scaffolds; formation mechanisms and applications

    E-Print Network [OSTI]

    Oh, Jihun

    2010-01-01T23:59:59.000Z

    Nanoporous anodic aluminium oxide (AAO) can be created with pores that self-assemble into ordered configurations. Nanostructured metal oxides have proven to be very useful as scaffolds for growth of nanowires and nanotubes ...

  6. Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)

    SciTech Connect (OSTI)

    Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

    2008-10-31T23:59:59.000Z

    Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

  7. Formation of ozone and oxidation of methane in a direct current corona discharge

    E-Print Network [OSTI]

    Tangirala, Umashanker

    1976-01-01T23:59:59.000Z

    FORMATION OF OZONE AND OXIDATION OF METHANE IN A DIRECT CURRENT CORONA DISCHARGE A Thesis by UMASHANKER TANGIRALA Submitted to the Graduate College of Texas A&M University in partial fulfillment of the requirement for the degree of MASTER... OF SCIENCE May 1976 Major Subject: Chemical Engineering FORMATION OF OZONE AND OXIDATION OF METHANE IN A DIRECT CURRENT CORONA DISCHARGE A Thesis by UMASHANKER TANGIRALA Approved as to style and content by: (Chairman of Committee) ( ad of Department...

  8. OH-initiated oxidation of benzene Part I. Phenol formation under atmospheric conditions

    E-Print Network [OSTI]

    OH-initiated oxidation of benzene Part I. Phenol formation under atmospheric conditions Rainer-radical initiated oxidation of benzene was studied in two simulation chambers: (1) the large-volume outdoor chamber-red spectroscopy (FTIR) were used to simultaneously measure phenol and benzene. The second study used only FTIR

  9. Femtosecond all-optical parallel logic gates based on tunable saturable to reverse saturable absorption in graphene-oxide thin films

    SciTech Connect (OSTI)

    Roy, Sukhdev, E-mail: sukhdevroy@dei.ac.in; Yadav, Chandresh [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)] [Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra 282 005 (India)

    2013-12-09T23:59:59.000Z

    A detailed theoretical analysis of ultrafast transition from saturable absorption (SA) to reverse saturable absorption (RSA) has been presented in graphene-oxide thin films with femtosecond laser pulses at 800?nm. Increase in pulse intensity leads to switching from SA to RSA with increased contrast due to two-photon absorption induced excited-state absorption. Theoretical results are in good agreement with reported experimental results. Interestingly, it is also shown that increase in concentration results in RSA to SA transition. The switching has been optimized to design parallel all-optical femtosecond NOT, AND, OR, XOR, and the universal NAND and NOR logic gates.

  10. Biofuel cells: Electro-enzymatic oxidation of formate using formate dehydrogenase, NAD{sup +}, diaphorase, benzyl viologen, and graphite

    SciTech Connect (OSTI)

    Palmmore, G.T.R.; Bertschy, H.; Bergens, S.H.; Whitesides, G.M. [Harvard Univ., Cambridge, MA (United States)

    1993-12-31T23:59:59.000Z

    The authors have developed an effective electrochemical method to regenerate nicotinamide adenine dinucleotide (NAD{sup +}) from NADH. Diaphorase (D) was used to oxidize NADH to NAD{sup +} with the concomitant reduction of two equivalents of benzylviologen (BV{sup 2+}) to the mono cation, BV{sup +} to the mono cation, BV{sup +}. The BV{sup +} was then electrochemically oxidized to BV{sup 2+} at a carbon-felt anode: NADH + 2BV{sup 2+} --(D)--> NAD{sup +} + 2BV{sup +} 2BV{sup +}-->(anode)-->2BV{sup 2+}. This system was incorporated into an enzymatic fuel cell that used formate as fuel. Formate dehydrogenase (FDH) was used to oxidize formate to CO{sub 2} with the concomitant 2 e{sup {minus}}, 2H{sup +} reduction of NAD{sup +} to NADH. The NADH was then regenerated using the system described above. The anode of the fuel cell was used to oxidize BV{sup +} to BV{sup 2+}. Blackened Pt gauze as used as the cathode of the fuel cell. The working parameters of the formate/O{sub 2} biofuel cell will be presented including methods to develop this system into the more complex methanol/O{sub 2} biofuel cell.

  11. Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO{sub 2} gate dielectrics

    SciTech Connect (OSTI)

    Samanta, Piyas, E-mail: piyas@vcfw.org [Department of Physics, Vidyasagar College for Women, 39 Sankar Ghosh Lane, Kolkata 700 006 (India); Huang, Heng-Sheng; Chen, Shuang-Yuan [Institute of Mechatronic Engineering, National Taipei University of Technology, No. 1, Sec. 3, Chung-Hsiao E. Rd., Taipei 106, Taiwan (China); Liu, Chuan-Hsi [Department of Mechatronic Technology, National Taiwan Normal University, No. 162, Sec. 1, He-Ping E. Rd., Taipei 106, Taiwan (China); Cheng, Li-Wei [Central R and D Division, United Microelectronics Corporation, No. 3, Li-Hsin Rd. II, Hsinchu 300, Taiwan (China)

    2014-02-21T23:59:59.000Z

    We present a detailed investigation on positive-bias temperature stress (PBTS) induced degradation of nitrided hafnium silicate (HfSiON)/SiO{sub 2} gate stack in n{sup +}-poly crystalline silicon (polySi) gate p-type metal-oxide-semiconductor (pMOS) devices. The measurement results indicate that gate dielectric degradation is a composite effect of electron trapping in as-fabricated as well as newly generated neutral traps, resulting a significant amount of stress-induced leakage current and generation of surface states at the Si/SiO{sub 2} interface. Although, a significant amount of interface states are created during PBTS, the threshold voltage (V{sub T}) instability of the HfSiON based pMOS devices is primarily caused by electron trapping and detrapping. It is also shown that PBTS creates both acceptor- and donor-like interface traps via different depassivation mechanisms of the Si{sub 3}???SiH bonds at the Si/SiO{sub 2} interface in pMOS devices. However, the number of donor-like interface traps ?N{sub it}{sup D} is significantly greater than that of acceptor-like interface traps ?N{sup A}{sub it}, resulting the PBTS induced net interface traps as donor-like.

  12. The formation of crystals in glasses containing rare earth oxides

    SciTech Connect (OSTI)

    Fadzil, Syazwani Mohd [Pohang University of Science and Technology (POSTECH), Pohang (Korea, Republic of); Hrma, Pavel [Pohang University of Science and Technology (POSTECH), Pohang, South Korea and Pacific Northwest National Laboratory, Richland, Washington (United States); Crum, Jarrod [Pacific Northwest National Laboratory, Richland, Washington (United States); Siong, Khoo Kok; Ngatiman, Mohammad Fadzlee; Said, Riduan Mt [National University of Malaysia, Bandar Baru Bangi, Selangor (Malaysia)

    2014-02-12T23:59:59.000Z

    Korean spent nuclear fuel will reach the capacity of the available temporary storage by 2016. Pyroprocessing and direct disposal seems to be an alternative way to manage and reuse spent nuclear fuel while avoiding the wet reprocessing technology. Pyroprocessing produces several wastes streams, including metals, salts, and rare earths, which must be converted into stabilized form. A suitable form for rare earth immobilization is borosilicate glass. The borosilicate glass form exhibits excellent durability, allows a high waste loading, and is easy to process. In this work, we combined the rare earths waste of composition (in wt%) 39.2Nd{sub 2}O{sub 3}–22.7CeO{sub 2}–11.7La{sub 2}O{sub 3}–10.9PrO{sub 2}–1.3Eu{sub 2}O{sub 3}–1.3Gd{sub 2}O{sub 3}–8.1Sm{sub 2}O{sub 3}–4.8Y{sub 2}O{sub 3} with a baseline glass of composition 60.2SiO{sub 2}–16.0B{sub 2}O{sub 3}–12.6Na{sub 2}O–3.8Al{sub 2}O{sub 3}–5.7CaO–1.7ZrO{sub 2}. Crystallization in waste glasses occurs as the waste loading increases. It may produce complicate glass processing and affect the product quality. To study crystal formation, we initially made glasses containing 5%, 10% and 15% of La{sub 2}O{sub 3} and then glasses with 5%, 10% and 15% of the complete rare earth mix. Samples were heat-treated for 24 hours at temperatures 800°C to 1150°C in 50°C increments. Quenched samples were analyzed using an optical microscope, scanning electron microscope with energy dispersive spectroscopy, and x-ray diffraction. Stillwellite (LaBSiO{sub 5}) and oxyapatite (Ca{sub 2}La{sub 8}Si{sub 6}O{sub 26}) were found in glasses containing La{sub 2}O{sub 3}, while oxyapatite (Ca{sub 2}La{sub 8}Si{sub 6}O{sub 26} and NaNd{sub 9}Si{sub 6}O{sub 26}) precipitated in glasses with additions of mixed rare earths. The liquidus temperature (T{sub L}) of the glasses containing 5%, 10% and 15% La{sub 2}O{sub 3} were 800°C, 959°C and 986°C, respectively; while T{sub L} was 825°C, 1059°C and 1267°C for glasses with 5%, 10% and 15% addition of mixed rare earth oxides. The component coefficients T{sub B2O3}, T{sub SiO2}, T{sub CaO}, and T{sub RE2O3} were also evaluated using a recently published study.

  13. Compact modeling of quantum effects in double gate MOSFETs

    E-Print Network [OSTI]

    Wang, Wei

    2007-01-01T23:59:59.000Z

    However, ultrathin gate oxide will lead to high gate leakagethe high enough oxide barrier confinement leads to zero waveoxide becomes significant. The random dopant fluctuation effects increase with shrinking device size and leads

  14. Pulsed oxidation and biological evolution in the Ediacaran Doushantuo Formation

    E-Print Network [OSTI]

    Jiang, Ganqing

    24061; Key Laboratory of Mineral Resources, Institute of Geology and Geophysics, Chinese Academy Ediacaran oceans were pervasively oxidized) did evolution of oxygen-requiring taxa reach global distribution changes in the aftermath of widespread and potentially global ice ages, including the evolution

  15. Kinetic model for nitric oxide formation during pulverized coal combustion

    SciTech Connect (OSTI)

    Mitchell, J.W.; Tarbell, J.M.

    1982-03-01T23:59:59.000Z

    A mathematical model of NO formation during pulverised coal combustion was developed from a proposed kinetic mechanism involving 12 overall chemical reactions. Most significantly, the model describes the complex conversion of coal bound nitrogen compounds to NO during combustion. The predictions of the model compare favourably with literature data and are in qualitative agreement with trends observed in practical coal combustion.

  16. Improving Corrosion Behavior in SCWR, LFR and VHTR Reactor Materials by Formation of a Stable Oxide

    SciTech Connect (OSTI)

    Arthur T. Motta; Robert Comstock; Ning Li; Todd Allen; Gary Was

    2009-12-21T23:59:59.000Z

    The objective of this study is to understand the influence of the alloy microstructure and composition on the formation of a stable, protective oxide in the environments relevant to the SCWR and LFR reactor concepts, as well as to the VHTR. It is proposed to use state-of-the art techniques to study the fine structure of these oxides to identify the structural differences between stable and unstable oxide layers. The techniques to be used are microbeam synchrotron radiation diffraction and fluorescence, and cross-sectional transmission electron microcopy on samples prepared using focused ion beam.

  17. Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir(V), Ir(VI), or Ir(VII)?

    E-Print Network [OSTI]

    Liao, Rongzhen

    Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir: Density functional calculations are used to revisit the reaction mechanism of water oxidation catalyzed oxidation at higher oxidation state even though it can also promote O-O bond formation. Therefore, [(bpy

  18. Al{sub 2}O{sub 3}/GeO{sub x} gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

    SciTech Connect (OSTI)

    Yang, Xu; Zeng, Zhen-Hua [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Wang, Sheng-Kai, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn; Sun, Bing; Zhao, Wei; Chang, Hu-Dong; Liu, Honggang, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xiong, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2014-09-01T23:59:59.000Z

    Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9?×?10{sup 11?}cm{sup ?2?}eV{sup ?1} have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al{sub 2}O{sub 3} with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al{sub 2}O{sub 3} is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al{sub 2}O{sub 3} network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.

  19. Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization and thermodynamic processes

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    643 Oxygen sublattice defect in cobalt oxide : formation, migration, charge localization of oxygen defects in CoO using classical simulations. The charge localization in the oxygen vacancy has]. The defect concentration in the oxygen sublattice is several orders of magnitude smaller, but never- theless

  20. Note: A method for minimizing oxide formation during elevated temperature nanoindentation

    SciTech Connect (OSTI)

    Cheng, I. C.; Hodge, A. M., E-mail: ahodge@usc.edu [Department of Aerospace and Mechanical Engineering, University of Southern California, 3650 McClintock Avenue OHE430, Los Angeles, California 90089 (United States); Garcia-Sanchez, E. [Department of Aerospace and Mechanical Engineering, University of Southern California, 3650 McClintock Avenue OHE430, Los Angeles, California 90089 (United States); Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Universidad S/N, San Nicolás de los Garza, NL 66450 (Mexico)

    2014-09-15T23:59:59.000Z

    A standardized method to protect metallic samples and minimize oxide formation during elevated-temperature nanoindentation was adapted to a commercial instrument. Nanoindentation was performed on Al (100), Cu (100), and W (100) single crystals submerged in vacuum oil at 200 °C, while the surface morphology and oxidation was carefully monitored using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results were compared to room temperature and 200 °C nanoindentation tests performed without oil, in order to evaluate the feasibility of using the oil as a protective medium. Extensive surface characterization demonstrated that this methodology is effective for nanoscale testing.

  1. Retention and switching kinetics of protonated gate field effect transistors

    SciTech Connect (OSTI)

    DEVINE,R.A.B.; HERRERA,GILBERT V.

    2000-05-23T23:59:59.000Z

    The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

  2. Retention and Switching Kinetics of Protonated Gate Field Effect Transistors

    SciTech Connect (OSTI)

    DEVINE,R.A.B.; HERRERA,GILBERT V.

    2000-06-27T23:59:59.000Z

    The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

  3. Mechanism for the formation of tin oxide nanoparticles and nanowires inside the mesopores of SBA-15

    SciTech Connect (OSTI)

    Satishkumar, G.; Titelman, L. [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Landau, M.V., E-mail: mlandau@bgu.ac.i [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

    2009-10-15T23:59:59.000Z

    The formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. HR-TEM and XRD revealed that during the thermal treatment in air 5 nm tin oxide NP with well defined Cassiterite structure were formed inside the SBA-15 matrix mesopores at 250 deg. C. After air calcination at 700 deg. C the NP assembled inside the SBA-15 mesopores as polycrystalline nanorods with different orientation of atomic layers in jointed nanocrystals. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP at low temperature. The pure tin chloride heated in air at 250 deg. C did not react with oxygen to yield tin oxide. Tin oxide NP were also formed during the thermal treatment of the tin chloride loaded SBA-15 in helium atmosphere at 250 deg. C. Hence, it is well evident that silanols present in the silica matrix not only increase the wetting of tin chloride over the surface of SBA-15 favoring its penetration to the matrix pores, but also react with hydrated tin chloride according to the proposed scheme to give tin oxide inside the mesopores. It was confirmed by XRD, N{sub 2}-adsorption, TGA-DSC and FTIR spectra. This phenomenon was further corroborated by detecting the inhibition of SnO{sub 2} NP formation at 250 deg. C after inserting the tin precursor to SBA-15 with reduced silanols concentration partially grafted with tin chloride. - Graphical abstract: The mechanism of formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP during thermal treatment.

  4. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect (OSTI)

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

    2012-12-01T23:59:59.000Z

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  5. Aromatics oxidation and soot formation in flames. Progress report, August 15, 1990--August 14, 1993

    SciTech Connect (OSTI)

    Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T.

    1993-04-01T23:59:59.000Z

    This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify, and to confirm or determine rate constants for, the main benzene oxidation reactions in flames, and to characterize soot and fullerenes and their formation mechanisms and kinetics. Stable and radical species profiles in the aromatics oxidation study are measured using molecular beam sampling with on-line mass spectrometry. The rate of soot formation measured by conventional optical techniques is found to support the hypotheses that particle inception occurs through reactive coagulation of high molecular weight PAH in competition with destruction by OHattack, and that the subsequent growth of the soot mass occurs through addition reactions of PAH and C{sub 2}H{sub 2} with the soot particles. During the first year of this reporting period, fullerenes C{sub 60} and C{sub 70} in substantial quantities were found in the flames being studied. The fullerenes were recovered, purified and spectroscopically identified. The yields of C{sub 60} and C{sub 70} were then determined over ranges of conditions in low-pressure premixed flames of benzene and oxygen.

  6. Thermodynamics of Uranyl Minerals: Enthalpies of Formation of Uranyl Oxide Hydrates

    SciTech Connect (OSTI)

    K. Kubatko; K. Helean; A. Navrotsky; P.C. Burns

    2005-05-11T23:59:59.000Z

    The enthalpies of formation of seven uranyl oxide hydrate phases and one uranate have been determined using high-temperature oxide melt solution calorimetry: [(UO{sub 2}){sub 4}O(OH){sub 6}](H{sub 2}O){sub 5}, metaschoepite; {beta}-UO{sub 2}(OH){sub 2}; CaUO{sub 4}; Ca(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}(H{sub 2}O){sub 8}, becquerelite; Ca(UO{sub 2}){sub 4}O{sub 3}(OH){sub 4}(H{sub 2}O){sub 2}; Na(UO{sub 2})O(OH), clarkeite; Na{sub 2}(UO{sub 2}){sub 6}O{sub 4}(OH){sub 6}(H{sub 2}O){sub 7}, the sodium analogue of compreignacite and Pb{sub 3}(UO{sub 2}){sub 8}O{sub 8}(OH){sub 6}(H{sub 2}O){sub 2}, curite. The enthalpy of formation from the binary oxides, {Delta}H{sub f-ox}, at 298 K was calculated for each compound from the respective drop solution enthalpy, {Delta}H{sub ds}. The standard enthalpies of formation from the elements, {Delta}H{sub f}{sup o}, at 298 K are -1791.0 {+-} 3.2, -1536.2 {+-} 2.8, -2002.0 {+-} 3.2, -11389.2 {+-} 13.5, -6653.1 {+-} 13.8, -1724.7 {+-} 5.1, -10936.4 {+-} 14.5 and -13163.2 {+-} 34.4 kJ mol{sup -1}, respectively. These values are useful in exploring the stability of uranyl oxide hydrates in auxiliary chemical systems, such as those expected in U-contaminated environments.

  7. Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

    SciTech Connect (OSTI)

    Nichau, A.; Schnee, M.; Schubert, J.; Bernardy, P.; Hollaender, B.; Buca, D.; Mantl, S. [Peter Gruenberg Institute 9 (PGI9-IT), Forschungszentrum Juelich, 52425 Juelich (Germany); JARA-Fundamentals of Future Information Technologies, 52425 Juelich (Germany); Besmehn, A.; Breuer, U. [Central Division for Chemical Analysis (ZCH), Forschungszentrum Juelich, 52425 Juelich (Germany); Rubio-Zuazo, J.; Castro, G. R. [Spanish CRG BM25 Beamline-SpLine, European Synchrotron Radiation Facility (ESRF), Rue Jules Horowitz BP 220, F-38043 Grenoble, Cedex 09 (France); Muecklich, A.; Borany, J. von [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum' Dresden-Rossendorf e.V., 01314 Dresden (Germany)

    2013-04-21T23:59:59.000Z

    Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

  8. A Computational Approach to Understanding Aerosol Formation and Oxidant Chemistry in the Troposphere

    SciTech Connect (OSTI)

    Francisco, Joseph S.; Kathmann, Shawn M.; Schenter, Gregory K.; Dang, Liem X.; Xantheas, Sotiris S.; Garrett, Bruce C.; Du, Shiyu; Dixon, David A.; Bianco, Roberto; Wang, Shuzhi; Hynes, James T.; Morita, Akihiro; Peterson, Kirk A.

    2006-04-18T23:59:59.000Z

    An understanding of the mechanisms and kinetics of aerosol formation and ozone production in the troposphere is currently a high priority because these phenomena are recognized as two major effects of energy-related air pollution. Atmospheric aerosols are of concern because of their effect on visibility, climate, and human health. Equally important, aerosols can change the chemistry of the atmosphere, in dramatic fashion, by providing new chemical pathways (in the condensed phase) unavailable in the gas phase. The oxidation of volatile organic compounds (VOCs) and inorganic compounds (e.g., sulfuric acid, ammonia, nitric acid, ions, and mineral) can produce precursor molecules that act as nucleation seeds. The U.S. Department of Energy (DOE) Atmospheric Chemistry Program (ACP) has identified the need to evaluate the causes of variations in tropospheric aerosol chemical composition and concentrations, including determining the sources of aerosol particles and the fraction of such that are of primary and secondary origin. In particular, the ACP has called for a deeper understanding into aerosol formation because nucleation creates substantial concentrations of fresh particles that, via growth and coagulation, influence the Earth's radiation budget. Tropospheric ozone is also of concern primarily because of its impact on human health. Ozone levels are controlled by NOx and by VOCs in the lower troposphere. The VOCs can be either from natural emissions from such sources as vegetation and phytoplankton or from anthropogenic sources such as automobiles and oil-fueled power production plants. The major oxidant for VOCs in the atmosphere is the OH radical. With the increase in VOC emissions, there is rising concern regarding the available abundance of HOx species needed to initiate oxidation. Over the last five years, there have been four field studies aimed at initial measurements of HOx species (OH and HO? radicals). These measurements revealed HOx levels that are two to four times higher than expected from the commonly assumed primary sources. Such elevated abundances of HOx imply a more photochemically active troposphere than previously thought. This implies that rates of ozone formation in the lower region of the atmosphere and the oxidation of SO? can be enhanced, thus promoting the formation of new aerosol properties. Central to unraveling this chemistry is the ability to assess the photochemical product distributions resulting from the photodissociation of by-products of VOC oxidation. We propose to use state-of-the-art theoretical techniques to develop a detailed understanding of the mechanisms of aerosol formation in multicomponent (mixed chemical) systems and the photochemistry of atmospheric organic species. The aerosol studies involve an approach that determines homogeneous gas-particle nucleation rates from knowledge of the molecular interactions that are used to define properties of molecular clusters. Over the past several years we developed Dynamical Nucleation Theory (DNT), a novel advance in the theoretical description of homogeneous gas-liquid nucleation, and applied it to gas-liquid nucleation of a single component system (e.g., water). The goal of the present research is to build upon these advances by extending the theory to multicomponent systems important in the atmosphere (such as clusters containing sulfuric acid, water, ions, ammonia, and organics). In addition, high-level ab initio electronic structure calculations will be used to unravel the chemical reactivity of the OH radical and water clusters.

  9. Lithotrophic iron-oxidizing bacteria produce organic stalks to control mineral growth: implications for biosignature formation

    SciTech Connect (OSTI)

    Chan, Clara S; Fakra, Sirine C; Emerson, David; Fleming, Emily J; Edwards, Katrina J

    2011-07-01T23:59:59.000Z

    Neutrophilic Fe-oxidizing bacteria (FeOB) are often identified by their distinctive morphologies, such as the extracellular twisted ribbon-like stalks formed by Gallionella ferruginea or Mariprofundus ferrooxydans. Similar filaments preserved in silica are often identified as FeOB fossils in rocks. Although it is assumed that twisted iron stalks are indicative of FeOB, the stalk's metabolic role has not been established. To this end, we studied the marine FeOB M. ferrooxydans by light, X-ray and electron microscopy. Using time-lapse light microscopy, we observed cells excreting stalks during growth (averaging 2.2 {micro}m h(-1)). Scanning transmission X-ray microscopy and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy show that stalks are Fe(III)-rich, whereas cells are low in Fe. Transmission electron microscopy reveals that stalks are composed of several fibrils, which contain few-nanometer-sized iron oxyhydroxide crystals. Lepidocrocite crystals that nucleated on the fibril surface are much larger ({approx}100 nm), suggesting that mineral growth within fibrils is retarded, relative to sites surrounding fibrils. C and N 1s NEXAFS spectroscopy and fluorescence probing show that stalks primarily contain carboxyl-rich polysaccharides. On the basis of these results, we suggest a physiological model for Fe oxidation in which cells excrete oxidized Fe bound to organic polymers. These organic molecules retard mineral growth, preventing cell encrustation. This model describes an essential role for stalk formation in FeOB growth. We suggest that stalk-like morphologies observed in modern and ancient samples may be correlated confidently with the Fe-oxidizing metabolism as a robust biosignature.

  10. The formation of light emitting cerium silicates in cerium-doped silicon oxides

    SciTech Connect (OSTI)

    Li Jing; Zalloum, Othman; Roschuk, Tyler; Heng Chenglin; Wojcik, Jacek; Mascher, Peter [Department of Engineering Physics and Centre for Emerging Device Technologies, McMaster University, Hamilton, Ontario L8S 4K1 (Canada)

    2009-01-05T23:59:59.000Z

    Cerium-doped silicon oxides with cerium concentrations of up to 0.9 at. % were deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Bright cerium related photoluminescence, easily seen even under room lighting conditions, was observed from the films and found to be sensitive to film composition and annealing temperature. The film containing 0.9 at. % Ce subjected to anneal in N{sub 2} at 1200 deg. C for 3 h showed the most intense cerium-related emission, easily visible under bright room lighting conditions. This is attributed to the formation of cerium silicate [Ce{sub 2}Si{sub 2}O{sub 7} or Ce{sub 4.667} (SiO{sub 4}){sub 3}O], the presence of which was confirmed by high resolution transmission electron microscopy.

  11. Fuel-sodium reaction product formation in breached mixed-oxide fuel

    SciTech Connect (OSTI)

    Bottcher, J.H.; Lambert, J.D.B.; Strain, R.V.; Ukai, S.; Shibahara, S.

    1988-01-01T23:59:59.000Z

    The run-beyond-cladding-breach (RBCB) operation of mixed-oxide LMR fuel pins has been studied for six years in the Experimental Breeder Reactor-II (EBR-II) as part of a joint program between the US Department of Energy and the Power Reactor and Nuclear Fuel Development Corporation of Japan. The formation of fuel-sodium reaction product (FSRP), Na/sub 3/MO/sub 4/, where M = U/sub 1-y/Pu/sub y/, in the outer fuel regions is the major phenomenon governing RBCB behavior. It increases fuel volume, decreases fuel stoichiometry, modifies fission-product distributions, and alters thermal performance of a pin. This paper describes the morphology of Na/sub 3/MO/sub 4/ observed in 5.84-mm diameter pins covering a variety of conditions and RBCB times up to 150 EFPD's. 8 refs., 1 fig.

  12. Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods

    SciTech Connect (OSTI)

    Avilov, V. I.; Ageev, O. A.; Kolomiitsev, A. S.; Konoplev, B. G., E-mail: kbg@sfedu.ru; Smirnov, V. A.; Tsukanova, O. G. [Southern Federal University, Institute of Nanotechnologies, Electronics, and Electronic Equipment Engineering (Russian Federation)

    2014-12-15T23:59:59.000Z

    The results of investigation of a memristor-matrix model on the basis of titanium-oxide nanoscale structures (ONSs) fabricated by methods of focused ion beams and atomic-force microscopy (AFM) are presented. The effect of the intensity of interaction between the AFM probe and the sample surface on the memristor effect in the titanium ONS is shown. The memristor effect in the titanium ONS is investigated by an AFM in the mode of spreading-resistance map. The possibility of the recording and erasure of information in the submicron cells is shown on the basis of using the memristor effect in the titanium ONS, which is most promising for developing the technological processes of the formation of resistive operation memory cells.

  13. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645 3,625 1,006 492 742EnergyOnItem NotEnergy,ARMFormsGasReleaseSpeechesHall ATours,Dioxide andNationalall petroleumGate

  14. Manganese sulfide formation via concomitant microbial manganese oxide and thiosulfate reduction

    SciTech Connect (OSTI)

    Lee, Ji-Hoon; Kennedy, David W.; Dohnalkova, Alice; Moore, Dean A.; Nachimuthu, Ponnusamy; Reed, Samantha B.; Fredrickson, Jim K.

    2011-12-13T23:59:59.000Z

    The dissimilatory metal-reducing bacterium, Shewanella oneidensis MR-1 produced {gamma}-MnS (rambergite) nanoparticles during the concurrent reduction of MnO{sub 2} and thiosulfate coupled to H{sub 2} oxidation. To investigate effect of direct microbial reduction of MnO{sub 2} on MnS formation, two MR-1 mutants defective in outer membrane c-type cytochromes ({Delta}mtrC/{Delta}omcA and {Delta}mtrC/{Delta}omcA/{Delta}mtrF) were also used and it was determined that direct reduction of MnO{sub 2} was dominant relative to chemical reduction by biogenic sulfide generated from thiosulfate reduction. Although bicarbonate was excluded from the medium, incubations of strain MR-1 with lactate as the electron donor produced MnCO{sub 3} (rhodochrosite) as well as MnS in nearly equivalent amounts as estimated by micro X-ray diffraction (micro-XRD) analysis. It was concluded that carbonate released from lactate metabolism promoted MnCO{sub 3} formation and that Mn(II) mineralogy was strongly affected by carbonate ions even in the presence of abundant sulfide and weakly alkaline conditions expected to favor the precipitation of MnS. Formation of MnS, as determined by a combination of micro-XRD, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction analyses was consistent with equilibrium speciation modeling predictions. Biogenic manganese sulfide may be a manganese sink in the Mn biogeochemical cycle in select environments such as deep anoxic marine basins within the Baltic Sea.

  15. Manganese sulfide formation via concomitant microbial manganese oxide and thiosulfate reduction.

    SciTech Connect (OSTI)

    Lee, Ji-Hoon; Kennedy, David W.; Dohnalkova, Alice; Moore, Dean A.; Nachimuthu, Ponnusamy; Reed, Samantha B.; Fredrickson, Jim K.

    2011-12-27T23:59:59.000Z

    The dissimilatory metal-reducing bacterium, Shewanella oneidensis MR-1 produced ?-MnS (rambergite) nanoparticles under the concurrent reduction of synthetic MnO2 and thiosulfate coupled to H2 oxidation. Using two MR-1 mutants defective in outer membrane c-type cytochromes (?mtrC/?omcA and ?mtrC/?omcA/?mtrF) to eliminate the direct reduction pathway for solid electron acceptors, it was determined that respiratory reduction of MnO2 was dominant relative to chemical reduction by biogenic sulfide generated from bacterial thiosulfate reduction. Although bicarbonate was excluded from the medium, incubations of MR-1 using lactate as the sole electron donor produced MnCO3 (rhodochrosite) as well as MnS in nearly equivalent amounts as estimated by micro X-ray diffraction (micro-XRD) analysis. It was concluded that carbonate released from lactate metabolism promoted MnCO3 formation and that Mn(II) mineralogy was strongly affected by carbonate ions even in the presence of abundant sulfide and weakly alkaline conditions that favor the precipitation of MnS. Formation of the biogenic MnS, as determined by a combination of micro-XRD, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction analyses was consistent with equilibrium speciation modeling predictions. Although biogenic MnS likely only forms and is stable over a relatively narrow range of conditions, it may be a significant sink for Mn in anoxic marine basins and terrestrial subsurface sediments where Mn and sulfur compounds are undergoing concurrent reduction.

  16. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect (OSTI)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30T23:59:59.000Z

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  17. Electrical characterization of native-oxide InAlPGaAs metal-oxide-semiconductor heterostructures using

    E-Print Network [OSTI]

    Electrical characterization of native-oxide InAlPÕGaAs metal-oxide-semiconductor heterostructures 8 December 2003; accepted 20 January 2004 InAIP native oxide/GaAs metal-oxide-semiconductor MOS of Schottky gates can lead to excessive gate leakage current and also restrict the forward gate bias to only

  18. Formation of jarosite-bearing deposits through aqueous oxidation of pyrite at Meridiani Planum, Mars

    E-Print Network [OSTI]

    Rhoads, James

    in an aqueous environment. We evaluate conditions responsible for the formation of a jarosite-goethite created an acidic environment that allowed formation of sulfates and goethite. Partial neutralization of the solution caused further goethite precipitation and conversion of jarosite to goethite, leading to formation

  19. Formation and distribution of neutral vanadium, niobium, and tantalum oxide clusters: Single photon ionization at 26.5 eV

    E-Print Network [OSTI]

    Rocca, Jorge J.

    Formation and distribution of neutral vanadium, niobium, and tantalum oxide clusters: Single photon 2006; accepted 7 September 2006; published online 25 October 2006 Neutral vanadium, niobium neutral clusters of vanadium, niobium, and tantalum oxides are of the general form MO2 0,1 M2O5 y. M2O5

  20. Detailed kinetic study of anisole pyrolysis and oxidation to understand tar formation during biomass

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    biomass combustion and gasification Milena Nowakowska, Olivier Herbinet, Anthony Dufour, Pierre. Methoxyphenols are one of the main precursors of PAH and soot in biomass combustion and gasification. Keywords: Anisole; Pyrolysis; Oxidation; Tars; Biomass; Kinetic modeling Corresponding author

  1. Investigation of the possibility of intermediate formation of allyl alcohol in the process of oxidative acetoxylation of propylene on a palladium-copper zeolite catalyst

    SciTech Connect (OSTI)

    Minachev, K.M.; Chizhov, O.S.; Kadentsev, V.I.; Kharlamov, V.V.; Nefedov, O.M.; Rodin, A.N.

    1985-12-10T23:59:59.000Z

    The formation of allyl acetate in reactions of oxidative acetoxylation of propylene by labeled acetic acid and esterification of labeled acetic acid by allyl alcohol on a Pd, Cu-zeolite catalyst occur with complete conservation of the labeled oxygen of the original labeled acetic acid in the reaction product. The authors propose a reaction scheme for the oxidative acetoxylation of propylene, providing for the formation of allyl alcohol as an intermediate compound, present in a chemisorbed state in the form of a complex with a Pd atom. The gas-phase oxidative acetoxylation of propylene is an industrial method of producing allyl acetate.

  2. Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films

    SciTech Connect (OSTI)

    Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M. [I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany and Jomo Kenyatta University of Agriculture and Technology, Box 62000 Nairobi (Kenya); I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen (Germany)

    2004-08-02T23:59:59.000Z

    A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.

  3. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, Christopher L. (Los Alamos, NM); Idzorek, George C. (Los Alamos, NM); Atencio, Leroy G. (Espanola, NM)

    1987-01-01T23:59:59.000Z

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  4. Gated strip proportional detector

    DOE Patents [OSTI]

    Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

    1985-02-19T23:59:59.000Z

    A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

  5. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01T23:59:59.000Z

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  6. Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor

    E-Print Network [OSTI]

    Singh, Amrinder

    2011-10-21T23:59:59.000Z

    . ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?? ? ? ? ? ? ? ? ? ? Front gate Source Back gate Drain n+n+ p- Body Fig. I.1. Planar double gate NFET DGFETs can be broadly classified into two categories: ? Symmetric: In symmetrical DGFET, the front and the back gate are identical, having same oxide thickness... nanometer regime. In short channel devices, Vth decreases with reduction in channel length. This phenomenon is also known as Vth roll-off. It can lead to significant increase in leakage power. Drain induced barrier lowering (DIBL) is another phenomenon...

  7. Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation

    SciTech Connect (OSTI)

    X Teng; W Du; D Su; Q Wang; A Frenkel

    2011-12-31T23:59:59.000Z

    Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

  8. Superparamagnetic iron oxide nanoparticles as radiosensitizer via enhanced reactive oxygen species formation

    SciTech Connect (OSTI)

    Klein, Stefanie; Sommer, Anja [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany)] [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany); Distel, Luitpold V.R. [Department of Radiation Oncology, Friedrich Alexander University Erlangen-Nuremberg, Universitaetsstrasse 27, D-91054 Erlangen (Germany)] [Department of Radiation Oncology, Friedrich Alexander University Erlangen-Nuremberg, Universitaetsstrasse 27, D-91054 Erlangen (Germany); Neuhuber, Winfried [Department of Anatomy, Chair of Anatomy I, Friedrich Alexander University Erlangen-Nuremberg, Krankenhausstr. 9, D-91054 Erlangen (Germany)] [Department of Anatomy, Chair of Anatomy I, Friedrich Alexander University Erlangen-Nuremberg, Krankenhausstr. 9, D-91054 Erlangen (Germany); Kryschi, Carola, E-mail: kryschi@chemie.uni-erlangen.de [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany)] [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany)

    2012-08-24T23:59:59.000Z

    Highlights: Black-Right-Pointing-Pointer Ultrasmall citrate-coated SPIONs with {gamma}Fe{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} structure were prepared. Black-Right-Pointing-Pointer SPIONs uptaken by MCF-7 cells increase the ROS production for about 240%. Black-Right-Pointing-Pointer The SPION induced ROS production is due to released iron ions and catalytically active surfaces. Black-Right-Pointing-Pointer Released iron ions and SPION surfaces initiate the Fenton and Haber-Weiss reaction. Black-Right-Pointing-Pointer X-ray irradiation of internalized SPIONs leads to an increase of catalytically active surfaces. -- Abstract: Internalization of citrate-coated and uncoated superparamagnetic iron oxide nanoparticles by human breast cancer (MCF-7) cells was verified by transmission electron microscopy imaging. Cytotoxicity studies employing metabolic and trypan blue assays manifested their excellent biocompatibility. The production of reactive oxygen species in iron oxide nanoparticle loaded MCF-7 cells was explained to originate from both, the release of iron ions and their catalytically active surfaces. Both initiate the Fenton and Haber-Weiss reaction. Additional oxidative stress caused by X-ray irradiation of MCF-7 cells was attributed to the increase of catalytically active iron oxide nanoparticle surfaces.

  9. PROOF COPY 501138JCP Polarization interactions and boroxol ring formation in boron oxide

    E-Print Network [OSTI]

    Stillinger, Frank

    Institute of Physics. DOI: 10.1063/1.1401817 I. INTRODUCTION Boron oxide chemical formula B2O3 is a network- served by inelastic neutron scattering,1,2 nuclear magnetic resonance,3­6 nuclear quadrupole resonance,7 to not reveal such structures.25­33 A reverse Monte Carlo study34 has shown that a high percentage of boroxol

  10. Polarization Interactions and Boroxol Ring Formation in Boron Oxide: A Molecular Dynamics Study

    E-Print Network [OSTI]

    Stillinger, Frank

    is favored. I. Introduction Boron oxide [chemical formula B 2 O 3 ] is a network glass­former. The short scattering (1,2), nuclear magnetic resonance (3­6), nuclear quadrupole resonance (7­9), Raman scattering (10 such structures (25­33). A reverse Monte Carlo study (34) has shown that a high percentage of boroxol rings cannot

  11. Methyl Formate Oxidation: Speciation Data, Laminar Burning Velocities, Ignition Delay Times and a Validated Chemical Kinetic Model

    SciTech Connect (OSTI)

    Dooley, S.; Burke, M. P.; Chaos, M.; Stein, Y.; Dryer, F. L.; Zhukov, V. P.; Finch, O.; Simmie, J. M.; Curran, H. J.

    2010-01-01T23:59:59.000Z

    The oxidation of methyl formate (CH{sub 3}OCHO) has been studied in three experimental environments over a range of applied combustion relevant conditions: 1. A variable-pressure flow reactor has been used to quantify reactant, major intermediate and product species as a function of residence time at 3 atm and 0.5% fuel concentration for oxygen/fuel stoichiometries of 0.5, 1.0, and 1.5 at 900 K, and for pyrolysis at 975 K. 2. Shock tube ignition delays have been determined for CH{sub 3}OCHO/O{sub 2}/Ar mixtures at pressures of ? 2.7, 5.4, and 9.2 atm and temperatures of 1275–1935 K for mixture compositions of 0.5% fuel (at equivalence ratios of 1.0, 2.0, and 0.5) and 2.5% fuel (at an equivalence ratio of 1.0). 3. Laminar burning velocities of outwardly propagating spherical CH{sub 3}OCHO/air flames have been determined for stoichiometries ranging from 0.8–1.6, at atmospheric pressure using a pressure-release-type high-pressure chamber. A detailed chemical kinetic model has been constructed, validated against, and used to interpret these experimental data. The kinetic model shows that methyl formate oxidation proceeds through concerted elimination reactions, principally forming methanol and carbon monoxide as well as through bimolecular hydrogen abstraction reactions. The relative importance of elimination versus abstraction was found to depend on the particular environment. In general, methyl formate is consumed exclusively through molecular decomposition in shock tube environments, while at flow reactor and freely propagating premixed flame conditions, there is significant competition between hydrogen abstraction and concerted elimination channels. It is suspected that in diffusion flame configurations the elimination channels contribute more significantly than in premixed environments.

  12. Formation of thin film Tl-based high-Tc? superconducting oxides from amorphous alloy precursors

    E-Print Network [OSTI]

    Williams, John Charles

    1991-01-01T23:59:59.000Z

    and satisfying. John Charles Williams TABLE OF CONTENTS ABSTRACT. ACKNOWLEDGMENTS. TABLE OF CONTENTS. LIST OF TABLES. LIST OF FIGURES. I. INTRODUCTION. 1v v vu1 A. Properties of Perovskites and Copper-Oxide Superconductors. . . . . . . . . 2 1.... Fundamental Properties. 2. Perovskite Crystal Structure. 3. Perovskite Crystal Structure Modifications 4, Structure of Thallate Superconductors . . B. Thallium-based Thin Film Superconductors. . . . 1. Tl-based Thin Film Production Methods. . . . 2...

  13. Low temperature formation of electrode having electrically conductive metal oxide surface

    DOE Patents [OSTI]

    Anders, Simone (Albany, CA); Anders, Andre (Albany, CA); Brown, Ian G. (Berkeley, CA); McLarnon, Frank R. (Orinda, CA); Kong, Fanping (Berkeley, CA)

    1998-01-01T23:59:59.000Z

    A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

  14. Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors

    SciTech Connect (OSTI)

    Maraeva, E. V., E-mail: jenvmar@mail.ru; Moshnikov, V. A.; Tairov, Yu. M. [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)] [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)

    2013-10-15T23:59:59.000Z

    Model concepts concerning control over the formation of oxide layers during the course of oxidation are developed on the basis of experimental results of studies of systematic features of the formation of nanostructured layers after diffusion annealing. Data on a variation in the composition of oxide phases as the extent of deviation from stoichiometry is changed in the initial lead chalcogenide are presented. Model concepts related to the possibility of varying the thickness of the coating oxide phases using annealing in an oxygen-containing medium are developed. It is shown that annealing in an iodine atmosphere ensures the effective penetration of oxygen into the grains, which is necessary for an increase in the photoluminescence efficiency.

  15. Bielectron vortices in gated graphene

    E-Print Network [OSTI]

    C. A. Downing; M. E. Portnoi

    2015-06-14T23:59:59.000Z

    We study the formation of bound two-particle states in gapless monolayer graphene in gated structures. We find that, even in the regime of massless Dirac fermions, coupling can occur at zero-energy for different or same charge quasiparticles. These bipartite states must have a non-zero internal angular momentum, meaning that they only exist as stationary vortices. We propose a new picture of the experimentally seen Fermi velocity renormalization as a manifestation of these pairs, suggest the possibility of a condensate of these novel quasiparticles.

  16. Adiabatically implementing quantum gates

    SciTech Connect (OSTI)

    Sun, Jie; Lu, Songfeng, E-mail: lusongfeng@hotmail.com; Liu, Fang [School of Computer Science and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2014-06-14T23:59:59.000Z

    We show that, through the approach of quantum adiabatic evolution, all of the usual quantum gates can be implemented efficiently, yielding running time of order O(1). This may be considered as a useful alternative to the standard quantum computing approach, which involves quantum gates transforming quantum states during the computing process.

  17. Synthesis gas formation by catalytic oxidation of methane in fluidized bed reactors

    SciTech Connect (OSTI)

    Bharadwaj, S.S.; Schmidt, L.D. (Univ. of Minnesota, Minneapolis (United States))

    1994-03-01T23:59:59.000Z

    The production of synthesis gas (CO + H[sub 2]) by the catalytic partial oxidation of CH[sub 4] in air or O[sub 2] in static fluidized beds at atmospheric pressure has been examined over Pt, Rh, and Ni catalysts coated on 100-[mu]m [alpha]-Al[sub 2]O[sub 3] beads. With CH[sub 4]/air feeds, CO and H[sub 2] selectivities as high as 95% with >90% CH[sub 4] conversion were obtained on Rh and Ni catalysts at contact times of 0.1-0.5 sec. Pt catalysts were found to have significantly lower selectivities for all the three catalysts were improved by heating the reaction mixture above the autothermal reactor temperature and using O[sub 2] instead of air. The selectivities and conversions were fairly constant over the range of contact time s used. Probable reaction pathways for CH[sub 4] oxidation in fluidized beds are discussed. 31 refs., 6 figs.

  18. Fundamental Studies of Irradiation-Induced Defect Formation and Fission Product Dynamics in Oxide Fuels

    SciTech Connect (OSTI)

    James Stubbins

    2012-12-19T23:59:59.000Z

    The objective of this research program is to address major nuclear fuels performance issues for the design and use of oxide-type fuels in the current and advanced nuclear reactor applications. Fuel performance is a major issue for extending fuel burn-up which has the added advantage of reducing the used fuel waste stream. It will also be a significant issue with respect to developing advanced fuel cycle processes where it may be possible to incorporate minor actinides in various fuel forms so that they can be 'burned' rather than join the used fuel waste stream. The potential to fission or transmute minor actinides and certain long-lived fission product isotopes would transform the high level waste storage strategy by removing the need to consider fuel storage on the millennium time scale.

  19. Contributions Of Stress And Oxidation On The Formation Of Whiskers In Pb-Free Solders

    SciTech Connect (OSTI)

    Duncan, A. J.; Hoffman, E. N.

    2014-03-25T23:59:59.000Z

    This report summarizes the research activities of WP-1754. The study focusses on the environmental factors influencing formation of lead free whiskers on electrodeposited tin coatings over copper (or copper containing) substrates. Much of the initial results are summarized in an interim report. From the initial results, two main areas were chosen to be the focus of additional research: the demonstration of effects of elastic stress state in the nucleation of whiskers and the confirmation of the effect of oxygen/nitrogen ratio in the formation of whiskers. Different levels of elastic stress were induced with the incorporation of a custom designed fixture that loaded the substrates in a four-point bending configuration and were maintained in an environmental chamber under conditions deemed favorable for whisker growth. The results show that induced elastic stress slightly increased the concentration of nucleation sites of whiskers. The effects of oxygen content were studied by aging substrates in gas vials of varying absolute pressure and different oxygen/nitrogen ratios. The concentration of whiskers were measured and appear to be sensitive to absolute pressure but are not sensitive to oxygen content (as previously observed).

  20. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12T23:59:59.000Z

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  1. Cleaning and passivation of copper surfaces to remove surface radioactivity and prevent oxide formation

    SciTech Connect (OSTI)

    Hoppe, Eric W.; Seifert, Allen; Aalseth, Craig E.; Bachelor, Paula P.; Day, Anthony R.; Edwards, Danny J.; Hossbach, Todd W.; Litke, Kevin E.; McIntyre, Justin I.; Miley, Harry S.; Schulte, Shannon M.; Smart, John E.; Warren, Glen A.

    2007-08-21T23:59:59.000Z

    High-purity copper is an attractive material for constructing ultra-low-background radiation measurement devices. Many low-background experiments using high-purity copper have indicated surface contamination emerges as the dominant background. Radon daughters plate out on exposed surfaces, leaving a residual 210Pb background that is difficult to avoid. Dust is also a problem; even under cleanroom conditions, the amount of U and Th deposited on surfaces can represent the largest remaining background. To control these backgrounds, a copper cleaning chemistry has been developed. Designed to replace an effective, but overly aggressive concentrated nitric acid etch, this peroxide-based solution allows for a more controlled cleaning of surfaces. The acidified hydrogen peroxide solution will generally target the Cu+/Cu2+ species which are the predominant surface participants, leaving the bulk of copper metal intact. This preserves the critical tolerances of parts and eliminates significant waste disposal issues. Accompanying passivation chemistry has also been developed that protects copper surfaces from oxidation. Using a high-activity polonium surface spike, the most difficult-to-remove daughter isotope of radon, the performance of these methods are quantified. © 2001 Elsevier Science. All rights reserved

  2. Cellular Gate Technology

    E-Print Network [OSTI]

    Knight, Thomas F.

    1998-01-05T23:59:59.000Z

    We propose a biochemically plausible mechanism for constructing digital logic signals and gates of significant complexity within living cells. These mechanisms rely largely on co-opting existing biochemical machinery and ...

  3. Formation of mixed oxide powders in flames: Part I. TiO sub 2 --SiO sub 2

    SciTech Connect (OSTI)

    Hung, C.; Katz, J.L. (Department of Chemical Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States))

    1992-07-01T23:59:59.000Z

    Mixed oxide powders, e.g., Al{sub 2}O{sub 3}--TiO{sub 2}, SiO{sub 2}--GeO{sub 2}, and TiO{sub 2}--SiO{sub 2}, are used in industry to produce ceramics, optical fibers, catalysts, and paint opacifiers. The properties of these products depend upon the morphology of the powders. Ceramics and optical fibers are produced using either a uniform mixture of multicomponent particles or a uniform solution. The desired morphology for catalysts is a high surface area and many active sites. TiO{sub 2} coated with a layer of SiO{sub 2} is the desired structure for use as a paint opacifier. In this paper, TiO{sub 2}--SiO{sub 2} mixed oxide powders were synthesized using a counterflow diffusion flame burner. TiCl{sub 4} and SiCl{sub 4} were used as source materials for the formation of oxide particles in hydrogen-oxygen flames. In-situ particle sizes were determined using dynamic light scattering. A thermophoretic sampling method also was used to collect particles directly onto carbon coated grids, and their size, morphology, and crystalline form examined using a transmission electron microscope. A photomultiplier at 90{degree} to the argon ion laser beam was used to measure the light-scattering intensity. The effect of temperature and of Si to Ti concentration ratio on particle morphology was investigated. Strong temperature dependence was observed. At high temperatures, TiO{sub 2} particles were covered with discrete SiO{sub 2} particles. At low temperatures, the structure changes to TiO{sub 2} particles encapsulated by SiO{sub 2}. TEM diffraction pattern measurements showed that the TiO{sub 2} is rutile and the SiO{sub 2} is amorphous silica. At high Si to Ti ratios, SiO{sub 2}-encapsulated TiO{sub 2} particles form. At low Si to Ti ratios, one obtains TiO{sub 2} particles covered with discrete SiO{sub 2} particles.

  4. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

    2009-08-04T23:59:59.000Z

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  5. Theoretical study of defect formation during the initial stages of native-oxide growth on GaSb (001)

    SciTech Connect (OSTI)

    Bermudez, V. M., E-mail: victor.bermudez@nrl.navy.mil [Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)

    2014-04-07T23:59:59.000Z

    The formation of defects during the initial stages of native-oxide growth on the GaSb (001)-?(4?×?3) surface has been studied computationally using spin-unrestricted density functional theory. It is found that insertion into a Ga-Sb adatom dimer to form a peroxo Ga-O-O-Sb bridge is the most energetically favorable process with insertion into Ga-Sb back-bonds being somewhat less so. A Ga-O-O-Ga bridge between dimers is also favorable, but Sb-O-O-Sb bridges show little if any stability. In the course of analyzing molecular adsorption, a particularly reactive site has been identified that leads to O{sub 2} dissociation with little or no barrier. This process is initiated in the vicinity of an Sb-Sb dimer in the terminating layer and leads to sub-surface Ga and Sb defect sites (i.e., coordinatively unsaturated atoms) and to strained Ga-Sb bonds that may be susceptible to further O{sub 2} attack. However, the defects formed in these reactions do not produce states in the gap.

  6. Enhanced spin signals due to native oxide formation in Ni{sub 80}Fe{sub 20}/Ag lateral spin valves.

    SciTech Connect (OSTI)

    Mihajlovic, G.; Schreiber, D. K.; Liu, Y.; Pearson, J. E.; Bader, S. D.; Petford-Long, A. K.; Hoffmann, A.; Northwestern Univ.

    2010-01-01T23:59:59.000Z

    Large nonlocal spin valve signals are reported in mesoscopic Ni{sub 80}Fe{sub 20}/Ag lateral spin valves upon exposing them to air. Magnetotransport measurements combined with transmission electron microscopy show that the formation of a native oxide layer at the Ni{sub 80}Fe{sub 20}/Ag interface is responsible for the large signals. The results indicate that lateral spin valves with superior performance to those based on high-resistance tunnel barriers can be achieved via controllable growth of native permalloy oxides.

  7. Peculiarities of formation of phase composition, porous structure, and catalytic properties of tungsten oxide-based macroporous materials fabricated by sol–gel synthesis

    SciTech Connect (OSTI)

    Papynov, Evgeniy Konstantinovich, E-mail: Papynov@mail.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Suhanova, 8, Vladivostok 690091 (Russian Federation); Mayorov, Vitaliy Yurevich, E-mail: 024205@inbox.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Palamarchuk, Marina Sergeevna, E-mail: 02.06.1984@mail.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Avramenko, Valentin Aleksandrovich, E-mail: avramenko1@yandex.ru [Institute of Chemistry, Far East Branch, Russian Academy of Sciences, Prospect 100-let Vladivostoku, 159, Vladivostok 690022 (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Suhanova, 8, Vladivostok 690091 (Russian Federation)

    2014-02-15T23:59:59.000Z

    The method of template sol–gel synthesis of tungsten oxide-based macroporous materials using ‘core–shell’ latex particles as colloid templates is described. The chemical composition and structural characteristics of the synthesized macroporous oxide systems have been investigated. The peculiarities of formation of material phase composition and macroporous structure under different template thermal destruction conditions have been revealed. An optimal method of a targeted synthesis of the crystalline tungsten(VI) oxide having a defect-free macroporous structure (average pore size 160 nm) and efficient catalytic properties under organic liquid phase oxidation conditions has been suggested. The prospects of the fabricated material application as catalysts of hydrothermal oxidation of radionuclide organic complexes at radioactive waste decontamination have been demonstrated. - Highlights: • Macroporous tungsten oxides were fabricated via sol–gel process. • The correlation between synthesis conditions and composition was determined. • Influence of synthesis conditions on porous structure has been explained. • The effects of template thermodestruction have been set up. • High potential of such materials for catalysis applications has been shown.

  8. Cardiac gated ventilation

    SciTech Connect (OSTI)

    Hanson, C.W. III [Hospital of the Univ. of Pennsylvania, Philadelphia, PA (United States). Dept. Anesthesia; Hoffman, E.A. [Univ. of Iowa College of Medicine, Iowa City, IA (United States). Div. of Physiologic Imaging

    1995-12-31T23:59:59.000Z

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart.

  9. Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature and by-products formation

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature efficiency together with the catalyst activation temperature when a Diesel Oxidation Catalyst (DOC) is placed downstream to a multi-plans Dielectric Barrier Discharge (DBD) reactor. In order to simulate Diesel engine

  10. On the interest of carbon-coated plasma reactor for advanced gate stack etching processes

    SciTech Connect (OSTI)

    Ramos, R.; Cunge, G.; Joubert, O. [Freescale Semiconductor Inc., 850 Rue Jean Monnet, 38921 Crolles Cedex (France) and Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France); Laboratoire des Technologies de la Microelectronique, CNRS, 17 Rue des Martyrs (c/o CEA-LETI), 38054 Grenoble Cedex 9 (France)

    2007-03-15T23:59:59.000Z

    In integrated circuit fabrication the most wide spread strategy to achieve acceptable wafer-to-wafer reproducibility of the gate stack etching process is to dry-clean the plasma reactor walls between each wafer processed. However, inherent exposure of the reactor walls to fluorine-based plasma leads to formation and accumulation of nonvolatile fluoride residues (such as AlF{sub x}) on reactor wall surfaces, which in turn leads to process drifts and metallic contamination of wafers. To prevent this while keeping an Al{sub 2}O{sub 3} reactor wall material, a coating strategy must be used, in which the reactor is coated by a protective layer between wafers. It was shown recently that deposition of carbon-rich coating on the reactor walls allows improvements of process reproducibility and reactor wall protection. The authors show that this strategy results in a higher ion-to-neutral flux ratio to the wafer when compared to other strategies (clean or SiOCl{sub x}-coated reactors) because the carbon walls load reactive radical densities while keeping the same ion current. As a result, the etching rates are generally smaller in a carbon-coated reactor, but a highly anisotropic etching profile can be achieved in silicon and metal gates, whose etching is strongly ion assisted. Furthermore, thanks to the low density of Cl atoms in the carbon-coated reactor, silicon etching can be achieved almost without sidewall passivation layers, allowing fine critical dimension control to be achieved. In addition, it is shown that although the O atom density is also smaller in the carbon-coated reactor, the selectivity toward ultrathin gate oxides is not reduced dramatically. Furthermore, during metal gate etching over high-k dielectric, the low level of parasitic oxygen in the carbon-coated reactor also allows one to minimize bulk silicon reoxidation through HfO{sub 2} high-k gate dielectric. It is then shown that the BCl{sub 3} etching process of the HfO{sub 2} high-k material is highly selective toward the substrate in the carbon-coated reactor, and the carbon-coating strategy thus allows minimizing the silicon recess of the active area of transistors. The authors eventually demonstrate that the carbon-coating strategy drastically reduces on-wafer metallic contamination. Finally, the consumption of carbon from the reactor during the etching process is discussed (and thus the amount of initial deposit that is required to protect the reactor walls) together with the best way of cleaning the reactor after a silicon etching process.

  11. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  12. A Sequence of Quantum Gates

    E-Print Network [OSTI]

    Yorick Hardy; Willi-Hans Steeb

    2012-02-10T23:59:59.000Z

    We study a sequence of quantum gates in finite-dimensional Hilbert spaces given by the normalized eigenvectors of the unitary operators. The corresponding sequence of the Hamilton operators is also given. From the Hamilton operators we construct another hierarchy of quantum gates via the Cayley transform.

  13. Role of the Berry Phase in the Formation of Stripes in Manganese Oxides 3 Takashi Hotta y and Yasutami Takada

    E-Print Network [OSTI]

    Takada, Yasutami

    106­8666, Japan Hiroyasu Koizumi Faculty of Science, Himeji Institute of Technology, Kanaji, Kamigori, Ako­gun, Hyogo 678­1297, Japan (25 November 1998) In order to gain an insight into the formation elec­ tron correlation, and (iv) strong electron­phonon cou­ pling leading to the Jahn­Teller (JT

  14. Ultrafast, high precision gated integrator

    SciTech Connect (OSTI)

    Wang, X.

    1995-01-01T23:59:59.000Z

    An ultrafast, high precision gated integrator has been developed by introducing new design approaches that overcome the problems associated with earlier gated integrator circuits. The very high speed is evidenced by the output settling time of less than 50 ns and 20 MHz input pulse rate. The very high precision is demonstrated by the total output offset error of less than 0.2mV and the output droop rate of less than 10{mu}V/{mu}s. This paper describes the theory of this new gated integrator circuit operation. The completed circuit test results are presented.

  15. Non-covalent interactions of nitrous oxide with aromatic compounds: Spectroscopic and computational evidence for the formation of 1:1 complexes

    SciTech Connect (OSTI)

    Cao, Qian [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland) [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland); School of Chemistry and Chemical Engineering, Sun Yat-Sen University, Guangzhou 510275 (China); Gor, Gennady Y., E-mail: ggor@princeton.edu [Department of Civil and Environmental Engineering, Princeton University, Princeton, New Jersey 08544 (United States); Krogh-Jespersen, Karsten [Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, New Brunswick, New Jersey 08903 (United States)] [Department of Chemistry and Chemical Biology, Rutgers, The State University of New Jersey, New Brunswick, New Jersey 08903 (United States); Khriachtchev, Leonid [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland)] [Department of Chemistry, P.O. Box 55, University of Helsinki, Helsinki FI-00014 (Finland)

    2014-04-14T23:59:59.000Z

    We present the first study of intermolecular interactions between nitrous oxide (N{sub 2}O) and three representative aromatic compounds (ACs): phenol, cresol, and toluene. The infrared spectroscopic experiments were performed in a Ne matrix and were supported by high-level quantum chemical calculations. Comparisons of the calculated and experimental vibrational spectra provide direct identification and characterization of the 1:1 N{sub 2}O-AC complexes. Our results show that N{sub 2}O is capable of forming non-covalently bonded complexes with ACs. Complex formation is dominated by dispersion forces, and the interaction energies are relatively low (about ?3 kcal mol{sup ?1}); however, the complexes are clearly detected by frequency shifts of the characteristic bands. These results suggest that N{sub 2}O can be bound to the amino-acid residues tyrosine or phenylalanine in the form of ? complexes.

  16. The effects of the initial stages of native-oxide formation on the surface properties of GaSb (001)

    SciTech Connect (OSTI)

    Bermudez, V. M. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375 (United States)

    2013-07-14T23:59:59.000Z

    Atomically clean surfaces of n-type GaSb (001) have been prepared by a combination of ex-situ wet-chemical treatment in HCl and in-situ annealing in a flux of H atoms in ultra-high vacuum (UHV). The surfaces are exposed to 'excited' O{sub 2} and studied using primarily x-ray photoelectron spectroscopy. Low O{sub 2} exposures, up to {approx}3 Multiplication-Sign 10{sup 3} Langmuirs (L), result in a partial passivation of electrically active defects as shown by a decrease in upward band bending. Adsorption of O{sub 2} in this exposure range appears to form mainly Ga{sup +1} sites, with little or no indication of Ga{sup +3}, and saturates at an O coverage of {approx}0.2-0.3 monolayers. For exposures of {approx}10{sup 4} L or higher, oxidation occurs through insertion into Ga-Sb bonds as indicated by the onset of Ga{sup +3} as well as of Sb{sup +4} and/or Sb{sup +5} together with the appearance of an O 1s feature. Defects resulting from this process cause a reversal of the band-bending change seen for smaller exposures. Data obtained for the composition of a native oxide formed in situ in UHV are compared with those for a 'practical' surface produced by processing under ambient conditions. These results suggest an optimum procedure for forming a Ga{sub 2}O{sub 3} layer prior to the growth by atomic layer deposition of an Al{sub 2}O{sub 3} layer.

  17. Electrochemical formation of field emitters

    DOE Patents [OSTI]

    Bernhardt, Anthony F. (Berkeley, CA)

    1999-01-01T23:59:59.000Z

    Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

  18. Non-Hermitian quantum gates are more common than Hermitian quantum gates

    E-Print Network [OSTI]

    Anirban Pathak

    2013-09-16T23:59:59.000Z

    Most of the frequently used quantum gates (e.g., NOT, Hadamard, CNOT, SWAP, Toffoli, Fredkin and Pauli gates) are self-inverse (Hermitian). However, with a simple minded argument it is established that most of the allowed quantum gates are non-Hermitian (non-self-inverse). It is also shown that the % of non-Hermitian gates increases with the dimension. For example, 58.33% of the 2-qubit gates, 98.10% of the 3-qubit gates and 99.99% of the 4-qubit gates are non-Hermitian. As classical reversible gates are essentially permutation gates so the above statistics is strictly valid for classical reversible gates. Further, since Hermiticity is not of much interest in context of the classical reversible gate, hence the result implies that most of the allowed classical reversible gates are non-self-inverse.

  19. GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

    2011-04-01T23:59:59.000Z

    The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

  20. Li overlayer formation, oxidation and sputtering characteristics of Al-Li alloys and W/Al-Li composites for fusion applications

    SciTech Connect (OSTI)

    Krauss, A.R. (Argonne National Lab., IL (USA)); DeWald, A.B.; Scott, P.; Savage, H. (Corium Industries, Inc., Atlanta, GA (USA))

    1990-01-01T23:59:59.000Z

    The next generation of long pulse fusion devices will impose severe requirements on the properties of plasma-facing materials. In devices such as ITER, a divertor design is being considered, using a divertor plate which would be either tungsten or a low-Z material such as graphite or beryllium. Strongly segregating lithium alloys have been proposed as a means of producing a self-sustaining low-Z overlayer which lowers plasma Z{sub eff} and resists self-sputtering. Aluminum-lithium alloys are among the better-characterized lithium-bearing alloys, and it has been demonstrated that lithium segregates strongly in aluminum. However, aluminum has a relatively low melting point, and for low lithium concentrations, the lithium diffusion rate is too slow to replenish lithium at the rate at which it is eroded by the incoming plasma. It has been suggested previously that the superionic {beta} phase Al-Li alloy (48--54 at. % Li) should have high enough diffusivity to be able to replenish surface lithium, and that incorporation of the {beta}-phase AlLi in a composite with tungsten would provide high temperature strength and melt layer stability, along with significantly better thermal conductivity than pure tungsten. Such a composite has been fabricated, as well as a variation containing titanium as a means of controlling oxidation at grain boundaries. The Li overlayer formation, erosion, and replenishment are characterized for the {beta}-phase LiAl alloy, and W-AlLi and W-Ti-AlLi composites. It is found that if there is no oxide layer to inhibit the Li segregation, Li diffusion is extremely rapid, and an oxygen-free Li overlayer is formed which is stable under continuous ion beam sputtering. 21 refs., 7 figs.

  1. Radar Vehicle Detection Within Four Quadrant Gate Crossings

    E-Print Network [OSTI]

    Illinois at Urbana-Champaign, University of

    of the exit gate · Less delay between entry and exit gate descent · Extends the exit gate delay only) Methodology 4) Results 5) Conclusions 6) Acknowledgments Exit Gate Operating Modes (EGOM) Radar Vehicle

  2. Ferroelectric-gated terahertz plasmonics on graphene

    E-Print Network [OSTI]

    Jin, Dafei

    Inspired by recent advancement of ferroelectric-gated memories and transistors, we propose a design of ferroelectric-gated nanoplasmonic devices based on graphene sheets clamped in ferroelectric crystals. We show that the ...

  3. Attosecond Temporal Gating with Elliptically Polarized Light

    SciTech Connect (OSTI)

    Dudovich, N.; Smirnova, O.; Ivanov, M. Yu.; Villeneuve, D. M.; Corkum, P. B. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6 (Canada); Levesque, J. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6 (Canada); INRS-EMT, 1650 boulevard Lionel-Boulet, CP 1020, Varennes, Quebec J3X 1S2 (Canada); Zeidler, D. [Steacie Institute for Molecular Sciences, National Research Council of Canada, Ottawa, Ontario K1A 0R6 (Canada); Carl Zeiss SMT AG, Oberkochen D-73447 (Germany); Comtois, D. [INRS-EMT, 1650 boulevard Lionel-Boulet, CP 1020, Varennes, Quebec J3X 1S2 (Canada)

    2006-12-22T23:59:59.000Z

    Temporal gating allows high accuracy time-resolved measurements of a broad range of ultrafast processes. By manipulating the interaction between an atom and an intense laser field, we extend gating into the nonlinear medium in which attosecond optical and electron pulses are generated. Our gate is an amplitude gate induced by ellipticity of the fundamental pulse. The gate modulates the spectrum of the high harmonic emission and we use the measured modulation to characterize the sub-laser-cycle dynamics of the recollision electron wave packet.

  4. Formation of mixed oxide powders in flames: Part II. SiO sub 2 --GeO sub 2 and Al sub 2 O sub 3 --TiO sub 2

    SciTech Connect (OSTI)

    Hung, C.; Miquel, P.F.; Katz, J.L. (Department of Chemical Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States))

    1992-07-01T23:59:59.000Z

    SiO{sub 2}--GeO{sub 2} and Al{sub 2}O{sub 3}--TiO{sub 2} mixed oxide powders were synthesized using a counterflow diffusion flame burner. SiCl{sub 4}, GeCl{sub 4}, Al(CH{sub 3}){sub 3}, and TiCl{sub 4} were used as source materials for the formation of oxide particles in hydrogen-oxygen flames. {ital In} {ital situ} particle sizes were determined using dynamic light-scattering. Powders were collected using two different methods, a thermophoretic method (particles are collected onto carbon coated TEM grids) and an electrophoretic method (particles are collected onto stainless steel strips). Their size, morphology, and crystalline form were examined using a transmission electron microscope and an x-ray diffractometer. A photomultiplier at 90{degree} to the argon ion laser beam was used to measure the light-scattering intensity. The formation of the mixed oxides was investigated using Si to Ge and Al to Ti ratios of 3:5 and 1:1, respectively. Heterogeneous nucleation of the SiO{sub 2} on the surface of the GeO{sub 2} was observed. In Al{sub 2}O{sub 3}--TiO{sub 2} mixtures, both oxide particles form at the same temperature. X-ray diffraction analysis of particles sampled at temperatures higher than 1553 K showed the presence of rutile, {gamma}--Al{sub 2}O{sub 3}, and aluminum titanate. Although the particle formation processes for SiO{sub 2}--GeO{sub 2} is very different from that for Al{sub 2}O{sub 3}--TiO{sub 2}, both mixed oxides result in very uniform mixtures.

  5. New approach to manufacturing field emitter arrays with sub-half-micron gate apertures

    E-Print Network [OSTI]

    Lee, Jong Duk

    insulator by local oxidation of silicon LOCOS , resulting in the reduction of the gate hole size due. Considering the cathode current level required for flat panel display applications and the measured emission-to-peak. © 1996 American Vacuum Society. I. INTRODUCTION Recently, much attention1,2 has been given to studying

  6. aluminum oxide thin: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    DEVICE LETTERS, VOL. 19, NO. 12, DECEMBER 1998 High-Performance Polycrystalline SiGe Thin-Film Materials Science Websites Summary: --The use of aluminum oxide as the gate...

  7. Composite two-qubit quantum gates

    E-Print Network [OSTI]

    Svetoslav S. Ivanov; Nikolay V. Vitanov

    2015-03-30T23:59:59.000Z

    We design composite two-qubit gates, based on the Ising-type interaction. The gates are robust against systematic errors in the qubits' interaction strength and the gate's implementation time. We give composite sequences, which cancel the error up to 6th order, and give a method to achieve even higher accuracy. Our sequences can compensate either relative or absolute errors. For relative error compensation the number of the ingredient gates grows linearly with the desired accuracy, while for absolute compensation only two gates are required to achieve infinitely accurate gates. We also consider an ion-trap implementation of our composite gates, where our sequences achieve simultaneous cancellation of the error in both the pulse area and the detuning.

  8. Remote controlled-NOT gate of d-dimension

    E-Print Network [OSTI]

    Gui-Fang Dang; Heng Fan

    2008-01-23T23:59:59.000Z

    Single qubit rotation gate and the controlled-NOT (CNOT) gate constitute a complete set of gates for universal quantum computation. In general the CNOT gate are only for two nearby qubits. For two qubits which are remote from each other, we need a series of swap gates to transfer these two qubits to the nearest neighboring sites, and then after the CNOT gate we should transfer them to their original sites again. However, a series of swap gates are resource for quantum information processing. One economy way which does not consume so much resource is to implement CNOT gate remotely. The remote CNOT gate is to implement the CNOT gate for two remotely separated qubits with the help of one additional maximally entangled state. The original remote CNOT gate is for two qubits, here we will present the d-dimensional remote CNOT gate. The role of quantum teleportation is identified in the process of the remote CNOT gate.

  9. Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Ten Eyck, Gregory A.; Childs, Kenton David; Celler, G. (SOITEC); Eng, Kevin; Eriksson, Mark A. (University of Wisconsin); Kluskiewicz, Dan (University of New Mexico); Stevens, Jeffrey; Carroll, Malcolm S.; Nordberg, Eric; Lilly, Michael Patrick; Lemp, Thomas; Sheng, Josephine Juin-Jye

    2008-10-01T23:59:59.000Z

    There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD) [1], which represented a significant breakthrough in the solid-state field. Although no Si spin qubit has been demonstrated to date, work on Si and SiGe based spin qubits is motivated by the observation that spin decoherence times can be significantly longer than in GaAs. Spin decoherence times in GaAs are in part limited by the random spectral diffusion of the non-zero nuclear spins of the Ga and As that couple to the electron spin through the hyperfine interaction. This effect can be greatly suppressed by using a semiconductor matrix with a near zero nuclear spin background. Near zero nuclear spin backgrounds can be engineered using Si by growing {sup 28}Si enriched epitaxy. In this talk, we will present fabrication details and electrical transport results of an accumulation mode double top gated Si metal insulator semiconductor (MIS) nanostructure, Fig 1 (a) & (b). We will describe how this single electron device structure represent a path towards forming a Si based spin qubit similar in design as that demonstrated in GaAs. Potential advantages of this novel qubit structure relative to previous approaches include the combination of: no doping (i.e., not modulation doped); variable two-dimensional electron gas (2DEG) density; CMOS compatible processes; and relatively small vertical length scales to achieve smaller dots. A primary concern in this structure is defects at the insulator-silicon interface. The Sandia National Laboratories 0.35 {micro}m fab line was used for critical processing steps including formation of the gate oxide to examine the utility of a standard CMOS quality oxide silicon interface for the purpose of fabricating Si qubits. Large area metal oxide silicon (MOS) structures showed a peak mobility of 15,000 cm{sup 2}/V-s at electron densities of {approx}1 x 10{sup 12} cm{sup -2} for an oxide thickness of 10 nm. Defect density measured using standard C-V techniques was found to be greater with decreasing oxide thickness suggesting a device design trade-off between oxide thickness and quantum dot size. The quantum dot structure is completed using electron beam lithography and poly-silicon etch to form the depletion gates, Fig 1 (a). The accumulation gate is added by introducing a second insulating Al{sub 2}O{sub 3} layer, deposited by atomic layer deposition, followed by an Al top gate deposition, Fig. 1 (b). Initial single electron transistor devices using SiO{sub 2} show significant disorder in structures with relatively large critical dimensions of the order of 200-300 nm, Fig 2. This is not uncommon for large silicon structures and has been cited in the literature [2]. Although smaller structures will likely minimize the effect of disorder and well controlled small Si SETs have been demonstrated [3], the design constraints presented by disorder combined with long term concerns about effects of defects on spin decoherence time (e.g., paramagnetic centers) motivates pursuit of a 2nd generation structure that uses a compound semiconductor approach, an epitaxial SiGe barrier as shown in Fig. 2 (c). SiGe may be used as an electron barrier when combined with tensilely strained Si. The introduction of strained-Si into the double top gated device structure, however, represents additional fabrication challenges. Thermal budget is potentially constrained due to concerns related to strain relaxation. Fabrication details related to the introduction of st

  10. Comment on "Catalytic Activity of the Rh Surface Oxide: CO Oxidation over Rh(111)

    E-Print Network [OSTI]

    Goodman, Wayne

    . Obviously, heating Rh in pure oxygen to T ) 230 °C and above will lead to the formation of surface Rh oxideComment on "Catalytic Activity of the Rh Surface Oxide: CO Oxidation over Rh(111) under Realistic suggest the importance of a surface oxide phase for high CO2 formation in CO-O2 reactions. However

  11. 2006 29 1 New Capacitorless 1T DRAM Cells : Surrounding Gate and Double Gate MOSFET With

    E-Print Network [OSTI]

    Lee, Jong Duk

    storage node silicon body floating . , double gate back gate negative bias excess hole back induced drain leakage . hole body cell state "1" hole body-drain forward bias cell state "0 source/drain SiN lithography pillar fin pattern . gate channel implantation 0.1µm . SiN hard

  12. Gate Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are being directedAnnual Siteof Energy 2,AUDIT REPORTEnergyFarms A SUK Place: Newport,Gate Solar Jump to:

  13. Epoxidation of the methamphetamine pyrolysis product, trans-phenylpropene, to trans-phenylpropylene oxide by CYP enzymes and stereoselective glutathione adduct formation

    SciTech Connect (OSTI)

    Sanga, Madhu [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Younis, Islam R. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Tirumalai, Padma S. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Bland, Tina M. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Banaszewska, Monica [Department of Neurobiology and Anatomy, West Virginia University, Morgantown, WV 26506 (United States); Konat, Gregory W. [Department of Neurobiology and Anatomy, West Virginia University, Morgantown, WV 26506 (United States); Tracy, Timothy S. [Department of Experimental and Clinical Pharmacology, University of Minnesota, Minneapolis, MN 55455 (United States); Gannett, Peter M. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Callery, Patrick S. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States)]. E-mail: pcallery@hsc.wvu.edu

    2006-03-01T23:59:59.000Z

    Pyrolytic products of smoked methamphetamine hydrochloride are well established. Among the various degradation products formed, trans-phenylpropene (trans-{beta}-methylstyrene) is structurally similar to styrene analogues known to be bioactivated by CYP enzymes. In human liver microsomes, trans-phenylpropene was converted to the epoxide trans-phenylpropylene oxide (trans-2-methyl-3-phenyloxirane) and cinnamyl alcohol. Incubation of trans-phenylpropene with microsomes in the presence of enzyme-specific P450 enzyme inhibitors indicated the involvement of CYP2E1, CYP1A2, and CYP3A4 enzymes. Both (R,R)-phenylpropylene oxide and (S,S)-phenylpropylene oxide were formed in human liver microsomal preparations. Enantiomers of trans-phenylpropylene oxide were stereoselectively and regioselectively conjugated in a Phase II drug metabolism reaction catalyzed by human liver cytosolic enzymes consisting of conjugation with glutathione. The structure of the phenylpropylene oxide-glutathione adduct is consistent with nucleophilic ring-opening by attack at the benzylic carbon. Exposure of cultured C6 glial cells to (S,S)-phenylpropylene oxide produced a cytotoxic response in a concentration-dependent manner based on cell degeneration and death.

  14. Cavity-QED-based quantum phase gate

    E-Print Network [OSTI]

    Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

    2003-01-01T23:59:59.000Z

    We describe a quantum phase gate in which the two qubits are represented by the photons in the two modes of the cavity field. The gate is implemented by passing a three-level atom in a cascade configuration through the cavity. The upper levels...

  15. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Citation Details Title: Gate-tunable exchange coupling between cobalt clusters on...

  16. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel...

  17. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    GATE: Energy Efficient Vehicles for Sustainable Mobility Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility Presentation given...

  18. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    current density, requires an understanding of liquid water transport in gas diffusion media * Research by students that have completed GATE center coursework, used GATE labs,...

  19. Possible Dynamically Gated Conductance along Heme Wires in Bacterial...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Possible Dynamically Gated Conductance along Heme Wires in Bacterial Multiheme Cytochromes. Possible Dynamically Gated Conductance along Heme Wires in Bacterial Multiheme...

  20. GATE Center of Excellence at UAB in Lightweight Materials for...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications 2011 DOE...

  1. Vehicle Technologies Office Merit Review 2014: GATE Center of...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. ti026vaidya2014p.pdf More Documents & Publications GATE...

  2. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for WBG Applications Presentation given by Oak Ridge National...

  3. GATE Center of Excellence at UAB in Lightweight Materials for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    & Publications GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications GATE Center of Excellence at UAB in Lightweight Materials for...

  4. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

  5. Oxygen migration in TiO{sub 2}-based higher-k gate stacks

    SciTech Connect (OSTI)

    Kim, Sang Bum; Brown, Stephen L.; Rossnagel, Stephen M.; Bruley, John; Copel, Matthew; Hopstaken, Marco J. P.; Narayanan, Vijay; Frank, Martin M. [IBM T.J. Watson Research Center, 1101 Kitchawan Road, Yorktown Heights, New York 10598 (United States)

    2010-03-15T23:59:59.000Z

    We report on the stability of high-permittivity (high-k) TiO{sub 2} films incorporated in metal-oxide-silicon capacitor structures with a TiN metal gate electrode, focusing on oxygen migration. Titanium oxide films are deposited by either Ti sputtering [physical vapor deposition (PVD)] followed by radical shower oxidation or by plasma-enhanced atomic layer deposition (PEALD) from titanium isopropoxide (Ti{l_brace}OCH(CH{sub 3}){sub 2{r_brace}4}) and O{sub 2} plasma. Both PVD and PEALD films result in near-stoichiometric TiO{sub 2} prior to high-temperature annealing. We find that dopant activation anneals of TiO{sub 2}-containing gate stacks at 1000 deg. C cause 5 A or more of additional SiO{sub 2} to be formed at the gate-dielectric/Si-channel interface. Furthermore, we demonstrate for the first time that oxygen released from TiO{sub 2} diffuses through the TiN gate electrode and oxidizes the poly-Si contact. The thickness of this upper SiO{sub 2} layer continues to increase with increasing TiO{sub 2} thickness, while the thickness of the regrown SiO{sub 2} at the gate-dielectric/Si interface saturates. The upper SiO{sub 2} layer degrades gate stack capacitance, and simultaneously the oxygen-deficient TiO{sub x} becomes a poor insulator. In an attempt to mitigate O loss from the TiO{sub 2}, top and bottom Al{sub 2}O{sub 3} layers are added to the TiO{sub 2} gate dielectric as oxygen barriers. However, they are found to be ineffective, due to Al{sub 2}O{sub 3}-TiO{sub 2} interdiffusion during activation annealing. Bottom HfO{sub 2}/Si{sub 3}N{sub 4} interlayers are found to serve as more effective oxygen barriers, reducing, though not preventing, oxygen downdiffusion.

  6. Extremely scaled high-k/In?.??Ga?.??As gate stacks with low leakage and low interface trap densities

    SciTech Connect (OSTI)

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2014-09-28T23:59:59.000Z

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO? and ZrO? gate stacks with extremely high accumulation capacitance densities of more than 5 ?F/cm? at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm?²eV?¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO? and small quantities of In?O?, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  7. Graduate Automotive Technology Education (GATE) Center

    SciTech Connect (OSTI)

    Jeffrey Hodgson; David Irick

    2005-09-30T23:59:59.000Z

    The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

  8. PII S0016-7037(98)00136-7 The kinetics of mixed Ni-Al hydroxide formation on clay and aluminum oxide minerals

    E-Print Network [OSTI]

    Sparks, Donald L.

    oxide minerals: A time-resolved XAFS study ANDR´E M. SCHEIDEGGER,1,2, * DANIEL G. STRAWN,1 GERALDINE M of sorption decreased significantly and depended on the type of mineral surface. For the Ni with increasing reaction time. Our study suggests that three phenomena occur at the mineral/liquid interface: (1

  9. Formation of nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR); Musket, Ronald G. (Danville, CA); Bernhardt, Anthony F. (Berkeley, CA)

    2000-01-01T23:59:59.000Z

    A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

  10. Chemical and structural investigation of the role of both Mn and Mn oxide in the formation of manganese silicate barrier layers on SiO{sub 2}

    SciTech Connect (OSTI)

    Casey, P.; Bogan, J.; Hughes, G. [School of Physical Sciences, Dublin City University, Glasnevin, Dublin 9 (Ireland); Lozano, J. G.; Nellist, P. D. [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom)

    2011-09-01T23:59:59.000Z

    In this study, Mn silicate (MnSiO{sub 3}) barrier layers were formed on thermally grown SiO{sub 2} using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in determining the extent of the interaction between the deposited Mn and the SiO{sub 2} substrate. Using x-ray photoelectron spectroscopy, it has been shown that a metallic Mn film with an approximate thickness of 1 nm cannot be fully converted to Mn silicate following vacuum annealing to 500 deg. C. Transmission electron microscopy (TEM) analysis suggests the maximum MnSiO{sub 3} layer thickness obtainable using metallic Mn is {approx}1.7 nm. In contrast, a {approx}1 nm partially oxidized Mn film can be fully converted to Mn silicate following thermal annealing to 400 deg. C, forming a MnSiO{sub 3} layer with a measured thickness of 2.6 nm. TEM analysis also clearly shows that MnSiO{sub 3} growth results in a corresponding reduction in the SiO{sub 2} layer thickness. It has also been shown that a fully oxidized Mn oxide thin film can be converted to Mn silicate, in the absence of metallic Mn. Based on these results it is suggested that the presence of Mn oxide species at the Mn/SiO{sub 2} interface facilitates the conversion of SiO{sub 2} to MnSiO{sub 3}, in agreement with previously published studies.

  11. A p-cell approach to integer gate sizing

    E-Print Network [OSTI]

    Doddannagari, Uday

    2009-05-15T23:59:59.000Z

    uniformly spaced gate sizes would result in a large number of gate sizes and maintaining the huge volume of data for this number of gate sizes is difficult. This thesis aims to propose a practical approach to implement integer gate sizes. A parameterized...

  12. Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means of standing-wave hard x-ray

    E-Print Network [OSTI]

    Fadley, Charles

    Nondestructive characterization of a TiN metal gate: Chemical and structural properties by means (HXPS, HAXPES) is applied to a thick (100 A° ) film of a metal gate TiN grown on top of a Si/MoSi2 of TiN, as well as the buried interface between TiN and the native oxide on top of the mirror

  13. New fabrication method of silicon field emitter arrays using thermal oxidation

    E-Print Network [OSTI]

    Lee, Jong Duk

    Vacuum Society. I. INTRODUCTION For most applications of vacuum microelectronics such as flat panel array using pure thermal oxide as a gate insulator are described. Since the thermally grown oxide film has a better stoichiometry and is a better insulator than the evaporated oxide, the fabrication

  14. High level compilation for gate reconfigurable architectures

    E-Print Network [OSTI]

    Babb, Jonathan William

    2001-01-01T23:59:59.000Z

    A continuing exponential increase in the number of programmable elements is turning management of gate-reconfigurable architectures as "glue logic" into an intractable problem; it is past time to raise this abstraction ...

  15. Sandia National Laboratories: i-GATE

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    partners, investors, and technical resources isn't generally an easy task for start-up companies. But for clients of the i-GATE (Innovation for Green Advanced Transportation...

  16. Gate potential control of nanofluidic devices

    E-Print Network [OSTI]

    Le Coguic, Arnaud

    2005-01-01T23:59:59.000Z

    The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

  17. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23T23:59:59.000Z

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  18. Remote quantum gates mediated by spin chains

    E-Print Network [OSTI]

    R. Ronke; I. D'Amico; T. P. Spiller

    2010-03-09T23:59:59.000Z

    There has been much recent study on the application of spin chains to quantum state transfer and communication. Here we demonstrate that spin chains set up for perfect quantum state transfer can be utilised to generate remote quantum gates, between spin qubits injected at the ends of the chain. The natural evolution of the system across different excitation number sectors generates a maximally-entangling and universal gate between the injected qubits, independent of the length of the chain.

  19. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15T23:59:59.000Z

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  20. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03T23:59:59.000Z

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  1. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1996-01-01T23:59:59.000Z

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  2. Sliding-gate valve for use with abrasive materials

    DOE Patents [OSTI]

    Ayers, Jr., William J. (Morgantown, WV); Carter, Charles R. (Fairmont, WV); Griffith, Richard A. (Morgantown, WV); Loomis, Richard B. (Bruceton Mills, WV); Notestein, John E. (Morgantown, WV)

    1985-01-01T23:59:59.000Z

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  3. Downhole burner systems and methods for heating subsurface formations

    DOE Patents [OSTI]

    Farmayan, Walter Farman (Houston, TX); Giles, Steven Paul (Damon, TX); Brignac, Jr., Joseph Phillip (Katy, TX); Munshi, Abdul Wahid (Houston, TX); Abbasi, Faraz (Sugarland, TX); Clomburg, Lloyd Anthony (Houston, TX); Anderson, Karl Gregory (Missouri City, TX); Tsai, Kuochen (Katy, TX); Siddoway, Mark Alan (Katy, TX)

    2011-05-31T23:59:59.000Z

    A gas burner assembly for heating a subsurface formation includes an oxidant conduit, a fuel conduit, and a plurality of oxidizers coupled to the oxidant conduit. At least one of the oxidizers includes a mix chamber for mixing fuel from the fuel conduit with oxidant from the oxidant conduit, an igniter, and a shield. The shield includes a plurality of openings in communication with the oxidant conduit. At least one flame stabilizer is coupled to the shield.

  4. Engineering integrated photonics for heralded quantum gates

    E-Print Network [OSTI]

    T. Meany; D. N. Biggerstaff; M. A. Broome; A. Fedrizzi; M. Delanty; A. Gilchrist; G. D. Marshall; M. J. Steel; A. G. White; M. J. Withford

    2015-02-11T23:59:59.000Z

    Scaling up linear-optics quantum computing will require multi-photon gates which are compact, phase-stable, exhibit excellent quantum interference, and have success heralded by the detection of ancillary photons. We investigate implementation of the optimal known gate design which meets these requirements: the Knill controlled-Z gate, implemented in integrated laser-written waveguide arrays. We show that device performance is more sensitive to the small deviations in the coupler reflectivity, arising due to the tolerance values of the fabrication method, than phase variations in the circuit. The mode fidelity was also shown to be less sensitive to reflectivity and phase errors than process fidelity. Our best device achieves a fidelity of 0.931+/-0.001 with the ideal 4x4 unitary circuit and a process fidelity of 0.680+/-0.005 with the ideal computational-basis process.

  5. A Dual Platform for Selective Analyte Enrichment and Ionization in Mass Spectrometry Using Aptamer-Conjugated Graphene Oxide

    E-Print Network [OSTI]

    Tan, Weihong

    -Conjugated Graphene Oxide Basri Gulbakan, Emir Yasun, M. Ibrahim Shukoor, Zhi Zhu, Mingxu You, Xiaohong Tan,, Hernan: This study demonstrates the use of aptamer-conju- gated graphene oxide as an affinity extraction a matrix and with greatly improved signal- to-noise ratios. Aptamer-conjugated graphene oxide has clear

  6. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12T23:59:59.000Z

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  7. abnormal sensorimotor gating: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the bilayer...

  8. An investigation of reaction parameters on geochemical storage of non-pure CO2 streams in iron oxides-bearing formations

    SciTech Connect (OSTI)

    Garcia, Susana; Liu, Q.; Bacon, Diana H.; Maroto-Valer, M. M.

    2014-08-26T23:59:59.000Z

    Hematite deposit that is the main FeIII-bearing mineral in sedimentary red beds was proposed as a potential host repository for converting CO2 into carbonate minerals such as siderite (FeCO3), when CO2–SO2 gas mixtures are co-injected. This work investigated CO2 mineral trapping using hematite and sensitivity of the reactive systems to different parameters, including particle size, gas composition, temperature, pressure, and solid-to-liquid ratio. Experimental and modelling studies of hydrothermal experiments were conducted, which emulated a CO2 sequestration scenario by injecting CO2-SO2 gas streams into a NaCl-NaOH brine hosted in iron oxide-containing aquifer. This study provides novel information on the mineralogical changes and fluid chemistry derived from the co-injection of CO2-SO2 gas mixtures in hematite deposit. It can be concluded that the amount of siderite precipitate depends primarily on the SO2 content of the gas stream. Increasing SO2 content in the system could promote the reduction of Fe3+ from the hematite sample to Fe2+, which will be further available for its precipitation as siderite. Moreover, siderite precipitation is enhanced at low temperatures and high pressures. The influence of the solid to liquid ratio on the overall carbonation reaction suggests that the conversion increases if the system becomes more diluted.

  9. Model catalytic oxidation studies using supported monometallic and heterobimetallic oxides

    SciTech Connect (OSTI)

    Ekerdt, J.G.

    1991-04-30T23:59:59.000Z

    This research program is directed toward developing a fundamental understanding of how catalyst composition, redox ability, and structure control the catalytic properties of metal oxides. Oxide systems that permit examination of the role of metal oxide cations separately and in pairwise combinations are being developed. Organometallic complexes containing C{sub 3}-allyl, cyclopentadienyl, or carbonyl ligands are exchanged with the hydroxide ligands of silica, alumina, titania, zirconia and magnesia supports. The exchange technique is used to achieve high metal oxide loadings without the formation of supported crystallites over silica. The organometallic route may also lead to oxygen-bridged cations and/or cation pairs over the supports prior to full oxidation. The anchored complex is subsequently oxidized to generate a supported oxide. 2 refs., 1 tab.

  10. Negative quantum capacitance in graphene nanoribbons with lateral gates

    E-Print Network [OSTI]

    Florian, Libisch

    Negative quantum capacitance in graphene nanoribbons with lateral gates R. Reiter1, , U. Derra2 , S numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate

  11. Entangling power and local invariants of two-qubit gates

    E-Print Network [OSTI]

    S Balakrishnan; R Sankaranarayanan

    2010-09-07T23:59:59.000Z

    We show a simple relation connecting entangling power and local invariants of two-qubit gates. From the relation, a general condition under which gates have same entangling power is arrived. The relation also helps in finding the lower bound of entangling power for perfect entanglers, from which the classification of gates as perfect and nonperfect entanglers is obtained in terms of local invariants.

  12. Entangling power and local invariants of two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2010-01-01T23:59:59.000Z

    We show a simple relation connecting entangling power and local invariants of two-qubit gates. From the relation, a general condition under which gates have same entangling power is arrived. The relation also helps to find the lower bound of entangling power for perfect entangler, from which a new classification of gates in terms of local invariants is obtained.

  13. Clustering of cyclic-nucleotide-gated channels in olfactory cilia

    E-Print Network [OSTI]

    French, Donald A.

    Clustering of cyclic-nucleotide-gated channels in olfactory cilia Richard J. Flannery* , Donald A channel clusters in olfactory cilia Key words: olfaction, receptor neuron, cyclic-nucleotide-gated channel of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG

  14. Quantum Logic Gates using q-deformed Oscillators

    E-Print Network [OSTI]

    Debashis Gangopadhyay; Mahendra Nath Sinha Roy

    2006-07-14T23:59:59.000Z

    We show that the quantum logic gates, {\\it viz.} the single qubit Hadamard and Phase Shift gates, can also be realised using q-deformed angular momentum states constructed via the Jordan-Schwinger mechanism with two q-deformed oscillators. {\\it Keywords :} quantum logic gates ; q-deformed oscillators ; quantum computation {\\it PACS:} 03.67.Lx ; 02.20.Uw

  15. The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area

    E-Print Network [OSTI]

    Kim, Suk Kyung

    2006-10-30T23:59:59.000Z

    ' perceptions of safety. Gated community residents reported a higher crime rate than nongated community residents. In addition to gates and fences that define apartment territory, such elements as patrol services, bright lighting, direct emergency buttons...

  16. Molecular doping for control of gate bias stress in organic thin film transistors

    SciTech Connect (OSTI)

    Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany)] [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)] [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany) [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

    2014-01-06T23:59:59.000Z

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

  17. Quantum gates via relativistic remote control

    E-Print Network [OSTI]

    Eduardo Martin-Martinez; Chris Sutherland

    2014-10-30T23:59:59.000Z

    We harness general relativistic effects to gain quantum control on a stationary qubit in an optical cavity by controlling the non-inertial motion of a different probe atom. Furthermore, we show that by considering relativistic trajectories of the probe, we enhance the efficiency of the quantum control. We explore the possible use of these relativistic techniques to build universal quantum gates.

  18. Characterizing the geometrical edges of nonlocal two-qubit gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2009-05-30T23:59:59.000Z

    Nonlocal two-qubit gates are geometrically represented by tetrahedron known as Weyl chamber within which perfect entanglers form a polyhedron. We identify that all edges of the Weyl chamber and polyhedron are formed by single parametric gates. Nonlocal attributes of these edges are characterized using entangling power and local invariants. In particular, SWAP (power)alpha family of gates constitutes one edge of the Weyl chamber with SWAP-1/2 being the only perfect entangler. Finally, optimal constructions of controlled-NOT using SWAP-1/2 gate and gates belong to three edges of the polyhedron are presented.

  19. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, VOL. 29, NO. 9, SEPTEMBER 2010 1409 Gate-Sizing-Based Single Vdd Test for Bridge

    E-Print Network [OSTI]

    Chakrabarty, Krishnendu

    complementary metal- oxide-semiconductor and can constitute 50% or more, of total defect count [1]. A bridge, SEPTEMBER 2010 1409 Gate-Sizing-Based Single Vdd Test for Bridge Defects in Multivoltage Designs Saqib design technique. Recent research has shown that testing for resistive bridging faults in such designs

  20. Classification of transversal gates in qubit stabilizer codes

    E-Print Network [OSTI]

    Jonas T. Anderson; Tomas Jochym-O'Connor

    2014-09-29T23:59:59.000Z

    This work classifies the set of diagonal gates that can implement a single or two-qubit transversal logical gate for qubit stabilizer codes. We show that individual physical gates on the underlying qubits that compose the code are restricted to have entries of the form $e^{i \\pi c/2^k}$ along their diagonal, resulting in a similarly restricted class of logical gates that can be implemented in this manner. Moreover, we show that all diagonal logical gates that can be implemented transversally by individual physical diagonal gates must belong to the Clifford hierarchy. Furthermore, we can use this result to prove a conjecture about transversal gates made by Zeng et al. in 2007.

  1. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

    2012-04-24T23:59:59.000Z

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  2. A laser-programmable gate array

    E-Print Network [OSTI]

    Gullette, James Benjamin

    1985-01-01T23:59:59.000Z

    was investigated. A novel approach to the personalization of digital NMOS semicustom devices using laser re- structuring techinques was developed to expand the capabilities of current devices. A laser-programmable device offers logic designers an alternative... are determined the metal mask is designed and the final product is produced by completing the metallizat, ion on the preprocessed chips. B. Trade-ops Gate arrays have many advantages over fully custom integrated circuits 11''. This semicustom approach...

  3. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    SciTech Connect (OSTI)

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo, E-mail: ykimm@knu.ac.kr [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Kim, Hwajeong [Organic Nanoelectronics Laboratory, Department of Chemical Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Priority Research Center, Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Lee, Joon-Hyung [School of Materials Science and Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of); Park, Soo-Young; Kang, Inn-Kyu [Department of Polymer Science and Engineering and Graduate School of Applied Chemical Engineering, Kyungpook National University, Daegu, 702-701 (Korea, Republic of)

    2014-09-15T23:59:59.000Z

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 ?m thick LC layer (4-cyano-4{sup ?}-pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 ?l/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm{sup 2}/Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V{sub D}) and gate (V{sub G}) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V{sub D} and V{sub G}. The best voltage combination was V{sub D} = ?0.2 V and V{sub G} = ?1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors.

  4. aerosol particle formation: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    1. Introduction 2 Current models tend to under-predict secondary organic aerosol (SOA Weber, Rodney 3 Modeling particle formation during low-pressure silane oxidation: Detailed...

  5. Measures of operator entanglement of two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2011-01-01T23:59:59.000Z

    Two different measures of operator entanglement of two-qubit gates, namely, Schmidt strength and linear entropy, are studied. While these measures are shown to have one-to-one relation between them for Schmidt number 2 class of gates, no such relation exists for Schmidt number 4 class, implying that the measures are inequivalent in general. Further, we establish a simple relation between linear entropy and local invariants of two-qubit gates. The implication of the relation is discussed.

  6. Classification of nonlocal two-qubit gates using Schmidt number

    E-Print Network [OSTI]

    S Balakrishnan; Leona J Felicia; R Sankaranarayanan

    2010-03-31T23:59:59.000Z

    It is known from Schmidt decomposition that Schmidt number of nonlocal two-qubit quantum gates is 2 or 4. We identify conditions on geometrical points of a gate to have Schmidt number 2. A simple analysis reveals that Schmidt number 2 corresponds to controlled unitary gates with CNOT being the only perfect entangler. Further, it is shown that Schmidt strength and entangling power are maximum only for CNOT in the controlled unitary family.

  7. Classification of nonlocal two-qubit gates using Schmidt number

    E-Print Network [OSTI]

    Balakrishnan, S; Sankaranarayanan, R

    2009-01-01T23:59:59.000Z

    It is known from Schmidt decomposition that Schmidt number of nonlocal two-qubit quantum gates is 2 or 4. We identify conditions on geometrical points of a gate to have Schmidt number 2. A simple analysis reveals that Schmidt number 2 corresponds to controlled unitary gates with CNOT being the only perfect entangler. Further, it is shown that Schmidt strength and entangling power are maximum only for CNOT in the controlled unitary family.

  8. Measures of operator entanglement of two-qubit gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2011-06-21T23:59:59.000Z

    Two different measures of operator entanglement of two-qubit gates, namely, Schmidt strength and linear entropy, are studied. While these measures are shown to have one-to-one relation between them for Schmidt number 2 class of gates, no such relation exists for Schmidt number 4 class, implying that the measures are inequivalent in general. Further, we establish a simple relation between linear entropy and local invariants of two-qubit gates. The implication of the relation is discussed.

  9. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS)...

  10. Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated...

    Energy Savers [EERE]

    Life Cycle Impacts Associated with Fertilizer used for Corn, Soybean, and Stover Production Quantifying Cradle-to-Farm Gate Life Cycle Impacts Associated with Fertilizer used...

  11. GATE Center of Excellence at UAB in Lightweight Materials for...

    Broader source: Energy.gov (indexed) [DOE]

    February 28, 2008 GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications Uday Vaidya (Principal Investigator) & J. Barry Andrews (Project Director)...

  12. An elementary optical gate for expanding entanglement web

    E-Print Network [OSTI]

    Toshiyuki Tashima; Sahin Kaya Ozdemir; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

    2008-03-13T23:59:59.000Z

    We introduce an elementary optical gate for expanding polarization entangled W states, in which every pair of photons are entangled alike. The gate is composed of a pair of 50:50 beamsplitters and ancillary photons in the two-photon Fock state. By seeding one of the photons in an $n$-photon W state into this gate, we obtain an $(n+2)$-photon W state after post-selection. This gate gives a better efficiency and a simpler implementation than previous proposals for $\\rm W$-state preparation.

  13. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    E-Print Network [OSTI]

    Zhang, Yuanbo

    2010-01-01T23:59:59.000Z

    Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

  14. Vehicle Technologies Office Merit Review 2014: GATE Center of...

    Broader source: Energy.gov (indexed) [DOE]

    GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit. lm081vaidya2014o.pdf More Documents & Publications...

  15. GATE Center of Excellence at UAB for Lightweight Materials and...

    Broader source: Energy.gov (indexed) [DOE]

    at UAB for Lightweight Materials and Manufacturing for Automotive, Truck and Mass Transit GATE Center of Excellence at UAB for Lightweight Materials and Manufacturing for...

  16. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education...

  17. Gate Fidelities, Quantum Broadcasting, and Assessing Experimental Realization

    E-Print Network [OSTI]

    Hyang-Tag Lim; Young-Sik Ra; Yong-Su Kim; Yoon-Ho Kim; Joonwoo Bae

    2011-06-29T23:59:59.000Z

    We relate gate fidelities of experimentally realized quantum operations to the broadcasting property of their ideal operations, and show that the more parties a given quantum operation can broadcast to, the higher gate fidelities of its experimental realization are in general. This is shown by establishing the correspondence between two operational quantities, quantum state shareability and quantum broadcasting. This suggests that, to assess an experimental realization using gate fidelities, the worst case of realization such as noisy operations should be taken into account and then compared to obtained gate fidelities. In addition, based on the correspondence, we also translate results in quantum state shareability to their counterparts in quantum operations.

  18. An overview of the gate and panel industry

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01T23:59:59.000Z

    OF CONTENTS I. Introduction II. Market Review lll Critical Factors IV. Gate and Panel Fvaluation A Table 1. Light Duty Gate B. Table 2. Medium Duty Gate C. Table 3. Heavy Duty Gate D. Table 4 Light Duty Panel B Table 5. Medium Duty Panel R Table 6... of their cost and convience. MARKET REVIEW There are a multitude of companies that manufacture portable handling facilities from the basic panel components to complete corral layouts. Just like with cattle breeds, there are a wide variety of manufactured...

  19. anodically oxidized titanium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    mixed anatase and rutile phases. Under simulated AM 1.5 G illumination, the peak solar energy conversion Heller, Eric 7 Porous anodic aluminum oxide scaffolds; formation mechanisms...

  20. anodic oxidized titanium: Topics by E-print Network

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    mixed anatase and rutile phases. Under simulated AM 1.5 G illumination, the peak solar energy conversion Heller, Eric 7 Porous anodic aluminum oxide scaffolds; formation mechanisms...

  1. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21T23:59:59.000Z

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?°C.

  2. Gate-teleportation-based blind quantum computation

    E-Print Network [OSTI]

    Mear M. R. Koochakie

    2014-12-25T23:59:59.000Z

    Blind quantum computation (BQC) is a model in which a computation is performed on a server by a client such that the server is kept blind about the input, the algorithm, and the output of the computation. Here we layout a general framework for BQC which, unlike the previous BQC models, does not constructed on specific computational model. A main ingredient of our construction is gate teleportation. We demonstrate that our framework can be straightforwardly implemented on circuit-based models as well as measurement-based models of quantum computation. We illustrate our construction by showing that universal BQC is possible on correlation-space measurement-based quantum computation models.

  3. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov You are8COaBulkTransmissionSitingProcess.pdf Jump1946865°,Park, Texas: EnergyGarvin County,|GasconadeOhio: EnergyGates,

  4. AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate

    E-Print Network [OSTI]

    York, Robert A.

    AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium; published 13 October 2004) Use of high-k gate dielectrics in AlGaN/GaN heterostructure field transconductance and pinchoff voltage. To achieve this, AlGaN/GaN metal-oxide-semiconductor heterostructure field

  5. An FPGA Architecture Supporting Dynamically Controlled Power Gating

    E-Print Network [OSTI]

    Wilton, Steve

    An FPGA Architecture Supporting Dynamically Controlled Power Gating Assem A. M. Bsoul 1 and Steven at reducing leakage power. However, previous techniques focus on statically- controlled power gating. In this paper, we propose a modification to the fabric of an FPGA that enables dynamically-controlled power

  6. DEFINITION OF MOTIONLESS PHASES FOR MONITORING GATED RECONSTRUCTION

    E-Print Network [OSTI]

    Boyer, Edmond

    of gating signals that are generated from an abdominal pressure variation signal. This method is considering at the beginning of steady phase of studied organs Objectives Study Protocol Abdominal pressure signal and Gating Average period of pressure variation µ0 = 770, 86 ms Standard deviation 10 = 72,25 ms : High value due

  7. Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer

    SciTech Connect (OSTI)

    Huang, Chiao-Ti, E-mail: chiaoti@princeton.edu; Li, Jiun-Yun; Chou, Kevin S.; Sturm, James C. [Department of Electrical Engineering, Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-06-16T23:59:59.000Z

    We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried layer to the surface quantum well can lead to the formation of a nearly immobile surface electron layer. The screening of the remote charges at the interface by this newly formed surface electron layer results in an increase in the mobility of the buried 2DEG. Furthermore, a significant decrease in the minimum mobile electron density of the 2DEG occurs as well. Together, these effects can reduce the increased detrimental effect of interface charges as the setback distance for the 2DEG to the surface is reduced for improved lateral confinement by top gates.

  8. University of Illinois at Urbana Champaigns GATE Center forAdvanced...

    Energy Savers [EERE]

    of Illinois at Urbana Champaigns GATE Center forAdvanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana Champaigns GATE Center forAdvanced...

  9. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel...

  10. US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing

    E-Print Network [OSTI]

    Lee, Dongwon

    US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing in the automotive industry and academia. Develop relationships between GATE students, faculty, employers

  11. Graphene terahertz modulators by ionic liquid gating

    E-Print Network [OSTI]

    Wu, Yang; Qiu, Xuepeng; Liu, Jingbo; Deorani, Praveen; Banerjee, Karan; Son, Jaesung; Chen, Yuanfu; Chia, Elbert E M; Yang, Hyunsoo

    2015-01-01T23:59:59.000Z

    Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

  12. Decomposition of bipartite and multipartite unitary gates into the product of controlled unitary gates

    E-Print Network [OSTI]

    Lin Chen; Li Yu

    2015-03-18T23:59:59.000Z

    We show that any unitary operator on the $d_A\\times d_B$ system ($d_A\\ge 2$) can be decomposed into the product of at most $4d_A-5$ controlled unitary operators. The number can be reduced to $2d_A-1$ when $d_A$ is a power of two. We also prove that three controlled unitaries can implement a bipartite complex permutation operator, and discuss the connection to an analogous result on classical reversible circuits. We further show that any $n$-partite unitary on the space $\\mathbb{C}^{d_1}\\otimes...\\otimes\\mathbb{C}^{d_n}$ is the product of at most $[2\\prod^{n-1}_{j=1}(2d_j-2)-1]$ controlled unitary gates, each of which is controlled from $n-1$ systems. The number can be further reduced for $n=4$. We also decompose any bipartite unitary into the product of a simple type of bipartite gates and some local unitaries. We derive dimension-independent upper bounds for the CNOT-gate cost or entanglement cost of bipartite permutation unitaries (with the help of ancillas of fixed size) as functions of the Schmidt rank of the unitary. It is shown that such costs under a simple protocol are related to the log-rank conjecture in communication complexity theory via the link of nonnegative rank.

  13. Gated x-ray detector for the National Ignition Facility

    SciTech Connect (OSTI)

    Oertel, John A.; Aragonez, Robert; Archuleta, Tom; Barnes, Cris; Casper, Larry; Fatherley, Valerie; Heinrichs, Todd; King, Robert; Landers, Doug; Lopez, Frank; Sanchez, Phillip; Sandoval, George; Schrank, Lou; Walsh, Peter; Bell, Perry; Brown, Matt; Costa, Robert; Holder, Joe; Montelongo, Sam; Pederson, Neal [Los Alamos National Laboratory, Los Alamos, New Mexico 87544 (United States); Lawrence Livermore National Laboratory, Livermore, California 94551-0808 (United States); VI Control Systems Ltd., Los Alamos, New Mexico 87544 (United States)

    2006-10-15T23:59:59.000Z

    Two new gated x-ray imaging cameras have recently been designed, constructed, and delivered to the National Ignition Facility in Livermore, CA. These gated x-Ray detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significantly different from earlier generations of gated x-ray images due, in part, to an innovative impedance matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring, and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution, and no detectable impedance reflections.

  14. Scanning Gate Spectroscopy and Its Application to Carbon Nanotube Defects

    E-Print Network [OSTI]

    Collins, Philip G

    2011-01-01T23:59:59.000Z

    24) Sarid, D. Exploring Scanning Probe Microscopy withS. V. ; Gruverman, A. Scanning probe microscopy: electricalLETTER pubs.acs.org/NanoLett Scanning Gate Spectroscopy and

  15. Micro-mechanical logic for field produceable gate arrays

    E-Print Network [OSTI]

    Prakash, Manu

    2005-01-01T23:59:59.000Z

    A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

  16. A comprehensive test method for reprogammable field programmable gate arrays

    E-Print Network [OSTI]

    Ashen, David Glen

    1996-01-01T23:59:59.000Z

    In this thesis, a new test algorithm for reprogrammable field programmable gate arrays (FPGAs) is developed. The fault models consisting of stuck-at faults, bridge faults, programmable switch stuck-on, and stuck-off faults, are utilized. Both...

  17. Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric

    SciTech Connect (OSTI)

    Pradhan, Sangram K.; Tanyi, Ekembu K.; Skuza, Jonathan R.; Xiao, Bo; Pradhan, Aswini K., E-mail: apradhan@nsu.edu [Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, Virginia 23504 (United States)

    2015-01-01T23:59:59.000Z

    Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO{sub 2} thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO{sub 2} MOS capacitor grown at 1?s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO{sub 2} films have gate leakage current density of (5.18?×?10{sup ?8} A/cm{sup 2}) as well as high dielectric break down fields of more than (?10 MV/cm), which is better and comparable to that of thermally grown SiO{sub 2} at temperatures above 800?°C. These appealing electrical properties of ALD grown SiO{sub 2} thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates.

  18. Unfamiliar oxidation states and their stabilization

    E-Print Network [OSTI]

    Kleinberg, Jacob

    1950-01-01T23:59:59.000Z

    appropriate conditions, either of free metals or of ions in lower states, has served for the preparation of higher oxidation states. Reference has already been made to the formation of the ferrate ion, FeOf2, and of Ago, by the electrolytic oxidation... compartments (Fig. 2), indicates (according to calculations based on Faraday's law) that the metal leaving the electrode has an average oxidation number in the neighborhood of 2.5.* The alu- * Oxidation numbers as low as 1.9 have recently been obtained...

  19. Direct-Coupling O? Bond Forming Pathway in Cobalt Oxide Water Oxidation Catalysts

    E-Print Network [OSTI]

    Wang, Lee-Ping

    We report a catalytic mechanism for water oxidation in a cobalt oxide cubane model compound, in which the crucial O–O bond formation step takes place by direct coupling between two CoIV(O) metal oxo groups. Our results are ...

  20. Rapidly reconfigurable all-optical universal logic gate

    DOE Patents [OSTI]

    Goddard, Lynford L. (Hayward, CA); Bond, Tiziana C. (Livermore, CA); Kallman, Jeffrey S. (Pleasanton, CA)

    2010-09-07T23:59:59.000Z

    A new reconfigurable cascadable all-optical on-chip device is presented. The gate operates by combining the Vernier effect with a novel effect, the gain-index lever, to help shift the dominant lasing mode from a mode where the laser light is output at one facet to a mode where it is output at the other facet. Since the laser remains above threshold, the speed of the gate for logic operations as well as for reprogramming the function of the gate is primarily limited to the small signal optical modulation speed of the laser, which can be on the order of up to about tens of GHz. The gate can be rapidly and repeatedly reprogrammed to perform any of the basic digital logic operations by using an appropriate analog optical or electrical signal at the gate selection port. Other all-optical functionality includes wavelength conversion, signal duplication, threshold switching, analog to digital conversion, digital to analog conversion, signal routing, and environment sensing. Since each gate can perform different operations, the functionality of such a cascaded circuit grows exponentially.

  1. Ultrafast gating of proximity-focused microchannel-plate intensifiers

    SciTech Connect (OSTI)

    Lundy, A.S.; Iverson, A.E.

    1982-01-01T23:59:59.000Z

    Proximity-focused, microchannel-plate (MCP) image intensifiers have been used at Los Alamos for many years to allow single frame film and video exposure times in the range of 2.5 to 10 ns. There is now a program to reduce gating times to < 1 ns. This paper reviews previous work and the problems in achieving good resolution with gating times of < 1 ns. The key problems involve applying fast electrical gating signals to the tube elements. We present computer modeling studies of the combined tube, tube connection, and pulser system and show that low photocathode surface resistivity must be obtained to permit fast gating between the photocathode and the MCP input. We discuss ways of making low-resistivity S20 photocathodes, using gallium arsenide photocathodes, and various means of gating the tubes. A variety of pulser designs are being experimentally evaluated including spark gaps, avalanche transistors, Krytron tubes with sharpening gaps, step recovery diodes, and photoconductive elements (PCEs). The results of these studies are presented. Because of the high capacitances involved in most gating schemes, the tube connection geometry must be of low-impedance design, and our solution is presented. Finally, ways of testing these high-speed camera systems are discussed.

  2. Filter design for hybrid spin gates

    E-Print Network [OSTI]

    Andreas Albrecht; Martin B. Plenio

    2015-04-14T23:59:59.000Z

    The impact of control sequences on the environmental coupling of a quantum system can be described in terms of a filter. Here we analyze how the coherent evolution of two interacting spins subject to periodic control pulses, at the example of a nitrogen vacancy center coupled to a nuclear spin, can be described in the filter framework in both the weak and the strong coupling limit. A universal functional dependence around the filter resonances then allows for tuning the coupling type and strength. Originally limited to small rotation angles, we show how the validity range of the filter description can be extended to the long time limit by time-sliced evolution sequences. Based on that insight, the construction of tunable, noise decoupled, conditional gates composed of alternating pulse sequences is proposed. In particular such an approach can lead to a significant improvement in fidelity as compared to a strictly periodic control sequence. Moreover we analyze the decoherence impact, the relation to the filter for classical noise known from dynamical decoupling sequences, and we outline how an alternating sequence can improve spin sensing protocols.

  3. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1998-09-08T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna (10), so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive (24) and transmit cavities (22) by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling.

  4. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08T23:59:59.000Z

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  5. Novel concepts of superconductive optoelectronic devices: Resonances of photoconductivity in the Cu{sub 2}O gate region

    SciTech Connect (OSTI)

    Masumi, Taizo; Isobe, Masakatsu [Gunma Univ., Kiryu, Gunma (Japan). Dept. of Electronic Engineering

    1996-12-31T23:59:59.000Z

    On the basis of the discoveries of anomalous photoconductivity of insulators correlated with high-{Tc} superconductivity, the authors introduce novel concepts of superconductive optoelectronic devices. They have proposed that one must be able to fabricate a new type of device by combining these photoconductors for the gate region and relevant superconductors for the source and drain regions, both effective below their Tc`s. They have been continuing a series of further experimental studies seeking actual possibilities by utilizing the basic substance Cu{sub 2}O for the gate material and superconductive LBCO, LSCO and YBCO for the source and drain materials, e.g., YBCO/Cu{sub 2}O/YBCO. Here, they report an observation of resonant and hybrid emergences of photoconductivity of Cu{sub 2}O in the gate region peculiarly in conjugation with the high-Tc superconductivity utilized in the source and drain regions in superconductive optoelectronic devices. Microwave photosignals at 35 GHz guarantee a high-speed operation of the device in the n-sec region. They feed these results in a Nano-engineering back to basic Physics of Oxide Superconductor in order to shed a new light on substantial natures of the Cu-O based high-{Tc} superconductivity.

  6. A laser-programmable gate array 

    E-Print Network [OSTI]

    Gullette, James Benjamin

    1985-01-01T23:59:59.000Z

    process with double layer polysilicon, typicaHy used for capacitors, and single layer metal. The laser techniques used to program the devices were the interconnection of the over- lapping polysilicon layers and the cutting of metal and polysilicon links... Array The VLSI program at Texas A&M University was provided with a standard double-poly N-channel Metal Oxide Semiconductor (NMOS) process. It has been found that certain laser personalization techniques for creating and deleting con- nections...

  7. Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J. Liu*, A. Ramirez**, D. L. Kwong*, D. Wristers**, A. Ritenour#

    E-Print Network [OSTI]

    Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pre- gate cleaning and NH3-based Ge surface

  8. RESEARCH PAPER Phase transition induced formation of hollow structures

    E-Print Network [OSTI]

    Ju, Yiguang

    such as stabilized nano- particles and an oxidation species are usually required to participate in the void formationRESEARCH PAPER Phase transition induced formation of hollow structures in colloidal lanthanide 2009 Ã? Springer Science+Business Media B.V. 2009 Abstract Formation of colloidal hollow structures

  9. Oxidation catalyst

    DOE Patents [OSTI]

    Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

    2010-11-09T23:59:59.000Z

    The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

  10. Formation of nano-crystalline todorokite from biogenic Mn Xiong Han Feng a,1

    E-Print Network [OSTI]

    Sparks, Donald L.

    Formation of nano-crystalline todorokite from biogenic Mn oxides Xiong Han Feng a,1 , Mengqiang Zhu oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano

  11. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide

    SciTech Connect (OSTI)

    Kerr, A. J. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Chagarov, E.; Kaufman-Osborn, T.; Kummel, A. C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093 (United States); Gu, S.; Wu, J.; Asbeck, P. M. [Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093 (United States); Madisetti, S.; Oktyabrsky, S. [Department of Nanoscale Science and Engineering, University at Albany–State University of New York, Albany, New York 12222 (United States)

    2014-09-14T23:59:59.000Z

    A combined wet and dry cleaning process for GaN(0001) has been investigated with XPS and DFT-MD modeling to determine the molecular-level mechanisms for cleaning and the subsequent nucleation of gate oxide atomic layer deposition (ALD). In situ XPS studies show that for the wet sulfur treatment on GaN(0001), sulfur desorbs at room temperature in vacuum prior to gate oxide deposition. Angle resolved depth profiling XPS post-ALD deposition shows that the a-Al{sub 2}O{sub 3} gate oxide bonds directly to the GaN substrate leaving both the gallium surface atoms and the oxide interfacial atoms with XPS chemical shifts consistent with bulk-like charge. These results are in agreement with DFT calculations that predict the oxide/GaN(0001) interface will have bulk-like charges and a low density of band gap states. This passivation is consistent with the oxide restoring the surface gallium atoms to tetrahedral bonding by eliminating the gallium empty dangling bonds on bulk terminated GaN(0001)

  12. Free-surface flow simulations for discharge-based operation of hydraulic structure gates

    E-Print Network [OSTI]

    Erdbrink, C D; Sloot, P M A

    2014-01-01T23:59:59.000Z

    We combine non-hydrostatic flow simulations of the free surface with a discharge model based on elementary gate flow equations for decision support in operation of hydraulic structure gates. A water level-based gate control used in most of today's general practice does not take into account the fact that gate operation scenarios producing similar total discharged volumes and similar water levels may have different local flow characteristics. Accurate and timely prediction of local flow conditions around hydraulic gates is important for several aspects of structure management: ecology, scour, flow-induced gate vibrations and waterway navigation. The modelling approach is described and tested for a multi-gate sluice structure regulating discharge from a river to the sea. The number of opened gates is varied and the discharge is stabilized with automated control by varying gate openings. The free-surface model was validated for discharge showing a correlation coefficient of 0.994 compared to experimental data. A...

  13. Mechanism of Selective Oxidation of Propene to Acrolein on Bismuth Molybdates from Quantum Mechanical Calculations

    E-Print Network [OSTI]

    Goddard III, William A.

    Mechanism of Selective Oxidation of Propene to Acrolein on Bismuth Molybdates from Quantum for understanding the fundamental chemical mechanisms underlying the selective oxidation of propene to acrolein to form acrolein, and acrolein desorption. The formation of -allyl intermediate is reversible

  14. Identification of a reversible quantum gate: assessing the resources

    E-Print Network [OSTI]

    Giulio Chiribella; Giacomo Mauro D'Ariano; Martin Roetteler

    2014-09-12T23:59:59.000Z

    We assess the resources needed to identify a reversible quantum gate among a finite set of alternatives, including in our analysis both deterministic and probabilistic strategies. Among the probabilistic strategies we consider unambiguous gate discrimination, where errors are not tolerated but inconclusive outcomes are allowed, and we prove that parallel strategies are sufficient to unambiguously identify the unknown gate with minimum number of queries. This result is used to provide upper and lower bounds on the query complexity and on the minimum ancilla dimension. In addition, we introduce the notion of generalized t-designs, which includes unitary t-designs and group representations as special cases. For gates forming a generalized t-design we give an explicit expression for the maximum probability of correct gate identification and we prove that there is no gap between the performances of deterministic strategies an those of probabilistic strategies. Hence, evaluating of the query complexity of perfect deterministic discrimination is reduced to the easier problem of evaluating the query complexity of unambiguous discrimination. Finally, we consider discrimination strategies where the use of ancillas is forbidden, providing upper bounds on the number of additional queries needed to make up for the lack of entanglement with the ancillas.

  15. Oxidation Characteristics of Fe-18Cr-18Mn-stainless alloys

    SciTech Connect (OSTI)

    James Rawers

    2010-10-01T23:59:59.000Z

    Air oxidation studies of Fe-18Cr-18Mn stainless steels were conducted at 525°C, 625°C, and 725°C. Alloys were evaluated with respect to changes in oxidation properties as a result of interstitial additions of nitrogen and carbon and of minor solute additions of silicon, molybdenum, and nickel. Interstitial concentrations possibly had a small, positive effect on oxidation resistance. Minor solute additions significantly improved oxidation resistance but could also reduce interstitial solubility resulting in formation of chromium carbides. Loss of solute chromium resulted in a slight reduction in oxidation protection. Oxidation lasting over 500 hours produced a manganese rich, duplex oxide structure: an outer sesquioxide and an inner spinel oxide.

  16. Characterizing the geometrical edges of nonlocal two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2009-01-01T23:59:59.000Z

    Nonlocal two-qubit gates are geometrically represented by tetrahedron known as Weyl chamber within which the perfect entanglers form a polyhedron. We study the entangling power and local invariants of all the edges of the Weyl chamber and polyhedron. It is found that SWAP -alpha- family of gates with constitute one edge of the Weyl chamber. Using circuit equivalence, it is shown that Controlled-NOT can be constructed from SWAP-1/2, the only perfect entangler in the above family. Further, the three edges of the polyhedron possessing the entangling power of 1/6 are also capable of constructing CNOT. It is observed that all the edges of the geometry are formed by single parametric two-qubit gates.

  17. Double Gated Single Molecular Transistor for Charge Detection

    E-Print Network [OSTI]

    S. J. Ray; R. Chowdhury

    2014-11-09T23:59:59.000Z

    The electrostatic behaviour of an 1,3-Cyclobutadiene (C$_{4}$H$_{4}$) based Single Molecular Transistor (SMT) has been investigated using the first principle calculation based on Density functional Theory and non-equilibrium Green's function approach. While the molecule is placed on top of a dielectric layer (backed by a metallic gate) and weakly coupled between the Source/Drain electrodes, the charge stability diagram revealed the presence of individual charge states in the Coulomb Blockade regime. This gets affected significantly on addition of an another gate electrode placed on the top of the molecule. This modified double-gated geometry allows additional control of the total energy of the system that is sensitive to the individual charge states of the molecule which can be used as a charge sensing technique operational at room temperature.

  18. Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons

    DOE Patents [OSTI]

    Kung, H.H.; Chaar, M.A.

    1988-10-11T23:59:59.000Z

    Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons is carried out over metal vanadate catalysts under oxidizing conditions. The vanadate catalysts are represented by the formulas M[sub 3](VO[sub 4])[sub 2] and MV[sub 2]O[sub 6], M representing Mg, Zn, Ca, Pb, or Cd. The reaction is carried out in the presence of oxygen, but the formation of oxygenate by-products is suppressed.

  19. Controlled-NOT Gate Interferometer with a Thermal Source

    E-Print Network [OSTI]

    Vincenzo Tamma; Johannes Seiler

    2015-05-05T23:59:59.000Z

    We demonstrate a multiphoton interferometer able to reproduce, by using only a thermal source, the operation of a quantum logic gate known as controlled-NOT gate. We show how 100%-visibility correlations typical of any Bell state can be obtained by performing polarization correlation measurements in the fluctuation of the number of photons at the interferometer output. The physics of multiphoton interference at the heart of this proposal can be readily used, in general, for the implementation of arbitrary-dimension bosonic networks leading to arbitrary-order entanglement-like correlations.

  20. Isolated-attosecond-pulse generation with infrared double optical gating

    SciTech Connect (OSTI)

    Lan Pengfei; Takahashi, Eiji J.; Midorikawa, Katsumi [Extreme Photonics Research Group, RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

    2011-06-15T23:59:59.000Z

    We propose and theoretically demonstrate an infrared two-color polarization gating scheme for generating an intense isolated attosecond pulse (IAP) in the multicycle regime. Our simulations show that an IAP can be produced using a multicycle two-color driving pulse with a duration up to 60 fs. Moreover, the carrier-envelope phase (CEP) of the driving laser is not required to be stabilized, although the IAP intensity changes with the CEP slip. Such a gating scheme significantly relaxes the requirements for driving lasers and opens the door to easily create intense IAPs with a high-power conventional multicycle laser pulse.

  1. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01T23:59:59.000Z

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  2. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01T23:59:59.000Z

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  3. SAVE THIS | EMAIL THIS | Close Bill and Melinda Gates go back to school

    E-Print Network [OSTI]

    Knaust, Helmut

    Powered by SAVE THIS | EMAIL THIS | Close Bill and Melinda Gates go back to school Their crusade, is essential, Melinda Gates insisted, "if we're going to make any dent in poverty in America." The idea

  4. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE...

    Energy Savers [EERE]

    UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence Presentation...

  5. Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

    E-Print Network [OSTI]

    Hashemi, Pouya

    2010-01-01T23:59:59.000Z

    Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture ...

  6. Penn State DOE GATE Center of Exellence for In-Vehicle, High...

    Energy Savers [EERE]

    Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems Penn State DOE GATE Center of Exellence for In-Vehicle, High-Power Energy Storage Systems...

  7. Alternate Thesis & Dissertation Formats Manuscript Format Guidelines

    E-Print Network [OSTI]

    Mayfield, John

    Alternate Thesis & Dissertation Formats Manuscript Format Guidelines In addition to the standard format for dissertation/thesis, the Graduate School allows for the use of an alternative format. The manuscript format refers to the use of articles and/or book chapters to replace the standard dissertation

  8. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    SciTech Connect (OSTI)

    Liang, Shibo; Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn; Si, Jia; Zhong, Donglai; Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

    2014-08-11T23:59:59.000Z

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2?V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  9. Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors

    E-Print Network [OSTI]

    Owen, Man Hon Samuel

    2010-11-16T23:59:59.000Z

    -effect transistor (FET) based on low-doped Ga0.975Mn0.025As was fabricated. It has an in-built n-GaAs back-gate, which, in addition to being a normal gate, enhances the gating effects, especially in the depletion of the epilayer, by decreasing the effective channel...

  10. A FOUR-QUADRANT FLOATING-GATE SYNAPSE Paul Hasler, Chris Diorio, and Bradley A. Minch

    E-Print Network [OSTI]

    Diorio, Chris

    and to the drain. We present experi- mental measurements from a oating-gate synapse that si- multaniously computes, typical of hebbian and backpropagation learning rules, between the input and drain voltages. Our four gate; the form of this rule depends on how various error signals are fed back to the oating gate. 1

  11. Worry Is Associated With Impaired Gating of Threat From Working Memory

    E-Print Network [OSTI]

    Larson, Christine L.

    Emotion Worry Is Associated With Impaired Gating of Threat From Working Memory Daniel M. Stout, C. L. (2014, August 25). Worry Is Associated With Impaired Gating of Threat From Working Memory Is Associated With Impaired Gating of Threat From Working Memory Daniel M. Stout University of Wisconsin

  12. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

    E-Print Network [OSTI]

    Piner, Edwin L.

    This letter describes a gate-first AlGaN/GaN high-electron mobility transistor (HEMT) with a W/high-k dielectric gate stack. In this new fabrication technology, the gate stack is deposited before the ohmic contacts, and ...

  13. Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy

    E-Print Network [OSTI]

    Dy, Jennifer G.

    Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy Ying Cui Dept. For gated lung cancer radiotherapy, it is difficult to generate ac- curate gating signals due to the large techniques, we apply them on five sequences of fluoroscopic images from five lung cancer patients against

  14. * 2048 by 2048 pixel format * 13.5 mm square pixels

    E-Print Network [OSTI]

    FEATURES * 2048 by 2048 pixel format * 13.5 mm square pixels * Image area 27.6 x 27.6 mm * Back protection * Very low noise output amplifiers * Dual responsivity output amplifiers * Gated dump drain of the CCD42 family of CCD sensors has full-frame architecture. Back illumination technology, in combination

  15. Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches

    SciTech Connect (OSTI)

    Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

    2013-11-25T23:59:59.000Z

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

  16. Gating and regulation of connexin 43 (Cx43) hemichannels

    E-Print Network [OSTI]

    Newman, Eric A.

    Gating and regulation of connexin 43 (Cx43) hemichannels Jorge E. Contreras* , Juan C. Sa Connexin 43 (Cx43) nonjunctional or ``unapposed'' hemichannels can open under physiological or pathological conditions. We char- acterize hemichannels comprised of Cx43 or Cx43-EGFP (Cx43 with enhanced GFP fused

  17. Advanced Gate Drive for the SNS High Voltage Converter Modulator

    SciTech Connect (OSTI)

    Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

    2009-05-07T23:59:59.000Z

    SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

  18. Three-qubit phase gate based on cavity quantum electrodynamics

    E-Print Network [OSTI]

    Chang, Jun-Tao; Zubairy, M. Suhail

    2008-01-01T23:59:59.000Z

    We describe a three-qubit quantum phase gate which is implemented by passing a four-level atom in a cascade configuration initially in its ground state through a three-mode optical cavity. The three qubits are represented by the photons in the three...

  19. Review Article Gate-Level Circuit Reliability Analysis: A Survey

    E-Print Network [OSTI]

    Chen, Chunhong

    electronic components (such as single electron devices) have demonstrated their nondeterministic characReview Article Gate-Level Circuit Reliability Analysis: A Survey Ran Xiao and Chunhong Chen. Circuit reliability has become a growing concern in today's nanoelectronics, which motivates strong

  20. ECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    imaging techniques to improve both the safety and the efficacy of coronary angiography interventions the ground for a platform dedicated to the planning and execution of percutaneous coronary inter- ventionsECG Gated Tomographic reconstruction for 3-D Rotational Coronary Angiography Yining HU, Lizhe XIE

  1. An overview of the gate and panel industry 

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01T23:59:59.000Z

    acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

  2. Design, Simulation and Modeling of Insulated Gate Bipolar Transistor

    E-Print Network [OSTI]

    Gupta, Kaustubh

    2013-07-09T23:59:59.000Z

    The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

  3. Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions

    E-Print Network [OSTI]

    LaValle, Steven M.

    Controlling Wild Mobile Robots Using Virtual Gates and Discrete Transitions Leonardo Bobadilla purposely design them to execute wild motions, which means each will strike every open set infinitely often, "wildly behaving" robots that move more-or-less straight until a wall is contacted. They then pick

  4. TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid

    E-Print Network [OSTI]

    Najm, Farid N.

    TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

  5. Compressed sensing quantum process tomography for superconducting quantum gates

    E-Print Network [OSTI]

    Andrey V. Rodionov; Andrzej Veitia; R. Barends; J. Kelly; Daniel Sank; J. Wenner; John M. Martinis; Robert L. Kosut; Alexander N. Korotkov

    2014-07-03T23:59:59.000Z

    We apply the method of compressed sensing (CS) quantum process tomography (QPT) to characterize quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two-qubit controlled-Z gate, we obtain an estimate for the process matrix $\\chi$ with reasonably high fidelity compared to full QPT, but using a significantly reduced set of initial states and measurement configurations. We show that the CS method still works when the amount of used data is so small that the standard QPT would have an underdetermined system of equations. We also apply the CS method to the analysis of the three-qubit Toffoli gate with numerically added noise, and similarly show that the method works well for a substantially reduced set of data. For the CS calculations we use two different bases in which the process matrix $\\chi$ is approximately sparse, and show that the resulting estimates of the process matrices match each ther with reasonably high fidelity. For both two-qubit and three-qubit gates, we characterize the quantum process by not only its process matrix and fidelity, but also by the corresponding standard deviation, defined via variation of the state fidelity for different initial states.

  6. Nanoengineered Thin Films for Solid Oxide Fuel Cells

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  7. Nanoengineered Thin Films for Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21T23:59:59.000Z

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  8. VARIABLE-ANGLE SPECTROSCOPIC ELLIPSOMETRY OF InAlP NATIVE OXIDE GATE DIELECTRIC LAYERS

    E-Print Network [OSTI]

    AlP-ox, In0.49Ga0.51P (InGaP), and InAlP have been determined by VASE measurements using a photon energy of the Optical Constants of InAlP-ox, InAlP, InGaP.......... 12 3.1 OverviewAlP and InGaP Optical Constants....................................... 26 Chapter 4: Characterizing

  9. Formulation and method for preparing gels comprising hydrous hafnium oxide

    DOE Patents [OSTI]

    Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

    2013-08-06T23:59:59.000Z

    Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

  10. Formulation and method for preparing gels comprising hydrous cerium oxide

    DOE Patents [OSTI]

    Collins, Jack L; Chi, Anthony

    2013-05-07T23:59:59.000Z

    Formulations useful for preparing hydrous cerium oxide gels contain a metal salt including cerium, an organic base, and a complexing agent. Methods for preparing gels containing hydrous cerium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including cerium, an organic base, and a complexing agent.

  11. Formulation and method for preparing gels comprising hydrous aluminum oxide

    SciTech Connect (OSTI)

    Collins, Jack L.

    2014-06-17T23:59:59.000Z

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  12. THE GROWTH MECHANISMS OF ULTRATHIN GATE DIELECTRICS ON SILICON

    E-Print Network [OSTI]

    Gustafsson, Torgny

    in the passive oxidation regime, while etching in the active oxidation regime made the surface slightly rougher. A roughening regime is also observed in between the active and passive oxidation regimes and causes, I was fortunate to share a house with Alex See, from whom Qing-Tang heard about me and recruited me

  13. A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation

    SciTech Connect (OSTI)

    Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

    2012-03-15T23:59:59.000Z

    Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

  14. Experimental implementation of optimal linear-optical controlled-unitary gates

    E-Print Network [OSTI]

    Karel Lemr; Karol Bartkiewicz; Antonín ?ernoch; Miloslav Dušek; Jan Soubusta

    2014-10-16T23:59:59.000Z

    We show that it is possible to reduce the number of two-qubit gates needed for the construction of an arbitrary controlled-unitary transformation by up to two times using a tunable controlled-phase gate. On the platform of linear optics, where two-qubit gates can only be achieved probabilistically, our method significantly reduces the amount of components and increases success probability of a two-qubit gate. The experimental implementation of our technique presented in this paper for a controlled single-qubit unitary gate demonstrates that only one tunable controlled-phase gate is needed instead of two standard controlled-NOT gates. Thus, not only do we increase success probability by about one order of magnitude (with the same resources), but also avoid the need for conducting quantum non-demolition measurement otherwise required to join two probabilistic gates. Subsequently, we generalize our method to a higher order, showing that n-times controlled gates can be optimized by replacing blocks of controlled-NOT gates with tunable controlled-phase gates.

  15. Asphalt Oxidation Kinetics and Pavement Oxidation Modeling

    E-Print Network [OSTI]

    Jin, Xin

    2012-07-16T23:59:59.000Z

    Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement...

  16. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

    SciTech Connect (OSTI)

    Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland)] [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-05-27T23:59:59.000Z

    A crystalline oxide film on InAs(100) is investigated with in situ monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction before and after in situ deposition of Al{sub 2}O{sub 3} by atomic layer deposition (ALD) as well as upon air exposure. The oxidation process leads to arsenic and indium trivalent oxidation state formation. The grown epitaxial oxide-InAs interface is stable upon ALD reactor exposure; however, trimethyl aluminum decreases oxidation states resulting in an unreconstructed surface. An increase in oxide concentration is also observed upon air exposure suggesting the crystalline oxide surface is unstable.

  17. Effectiveness of Using Supply Voltage as Back-Gate Bias in Ground Plane SOI Chris H. Kim1

    E-Print Network [OSTI]

    Kim, Chris H.

    -gate insulator thickness (2nm) for low drain-to-back- gate capacitance and effective tuning of Vt. The front gateEffectiveness of Using Supply Voltage as Back-Gate Bias in Ground Plane SOI MOSFET's Chris H. Kim1 designer has to ensure that this forward bias current through the psub-nwell and drain-body junctions (Fig

  18. Presented at the 2003 USSD Annual Lecture, Charleston, South Carolina. April 2003. SPILLWAY GATE RELIABILITY IN THE CONTEXT OF

    E-Print Network [OSTI]

    Bowles, David S.

    and operations are listed and illustrated through their application to the Thames Flood Barrier gates

  19. Hydrous metal oxide catalysts for oxidation of hydrocarbons

    SciTech Connect (OSTI)

    Miller, J.E.; Dosch, R.G.; McLaughlin, L.I. [Sandia National Labs., Albuquerque, NM (United States). Process Research Dept.

    1993-07-01T23:59:59.000Z

    This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

  20. Nitrogen oxide abatement by distributed fuel addition

    SciTech Connect (OSTI)

    Wendt, J.O.L.; Mereb, J.B.

    1989-06-20T23:59:59.000Z

    A combustor has been designed in order to retard the formation of nitrogen oxides by injection of reburning fuel. The design and the rebuilding of the new combustor was completed. Several new features were incorporated in the new design so that it would last longer. The design and construction of the furnace are discussed in this report. (VC)

  1. Fast adiabatic qubit gates using only $?_z$ control

    E-Print Network [OSTI]

    John M. Martinis; Michael R. Geller

    2014-07-17T23:59:59.000Z

    A controlled-phase gate was demonstrated in superconducting Xmon transmon qubits with fidelity reaching 99.4%, relying on the adiabatic interaction between the |11> and |02> states. Here we explain the theoretical concepts behind this protocol that achieves fast gate times with only $\\sigma_z$ control of the Hamiltonian, based on a theory of non-linear mapping of state errors to a power spectral density and use of optimal window functions. With a solution given in the Fourier basis, optimization is shown to be straightforward for practical cases of an arbitrary state change and finite bandwidth of control signals. We find that errors below $10^{-4}$ are readily achievable for realistic control waveforms.

  2. Improved phase gate reliability in systems with neutral Ising anyons

    E-Print Network [OSTI]

    David J. Clarke; Kirill Shtengel

    2010-09-01T23:59:59.000Z

    Recent proposals using heterostructures of superconducting and either topologically insulating or semiconducting layers have been put forth as possible platforms for topological quantum computation. These systems are predicted to contain Ising anyons and share the feature of having only neutral edge excitations. In this note, we show that these proposals can be combined with the recently proposed "sack geometry" for implementation of a phase gate in order to conduct robust universal quantum computation. In addition, we propose a general method for adjusting edge tunneling rates in such systems, which is necessary for the control of interferometric devices. The error rate for the phase gate in neutral Ising systems is parametrically smaller than for a similar geometry in which the edge modes carry charge: it goes as $T^3$ rather than $T$ at low temperatures. At zero temperature, the phase variance becomes constant at long times rather than carrying a logarithmic divergence.

  3. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Abdelhadi Belouad; Ahmed Jellal; Youness Zahidi

    2015-05-29T23:59:59.000Z

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  4. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Belouad, Abdelhadi; Zahidi, Youness

    2015-01-01T23:59:59.000Z

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  5. Reducing the quantum computing overhead with complex gate distillation

    E-Print Network [OSTI]

    Guillaume Duclos-Cianci; David Poulin

    2014-03-20T23:59:59.000Z

    In leading fault-tolerant quantum computing schemes, accurate transformation are obtained by a two-stage process. In a first stage, a discrete, universal set of fault-tolerant operations is obtained by error-correcting noisy transformations and distilling resource states. In a second stage, arbitrary transformations are synthesized to desired accuracy by combining elements of this set into a circuit. Here, we present a scheme which merges these two stages into a single one, directly distilling complex transformations. We find that our scheme can reduce the total overhead to realize certain gates by up to a few orders of magnitude. In contrast to other schemes, this efficient gate synthesis does not require computationally intensive compilation algorithms, and a straightforward generalization of our scheme circumvents compilation and synthesis altogether.

  6. Cellular/Molecular A Calcium-Induced Calcium Influx Factor, Nitric Oxide,

    E-Print Network [OSTI]

    Newman, Eric A.

    in astrocytes lead to the Ca2 -dependent synthesis of nitric oxide. This in turn stimulates a Ca2 influx pathwayCellular/Molecular A Calcium-Induced Calcium Influx Factor, Nitric Oxide, Modulates the Refilling in astrocytes, we imaged the formation of nitric oxide in cultured murine cortical astrocytes using DAF-FM (4

  7. Start | Author Index 742-1 Methylarsenate Sorption to Aluminum Oxide.

    E-Print Network [OSTI]

    Sparks, Donald L.

    Start | Author Index 742-1 Methylarsenate Sorption to Aluminum Oxide. Wednesday, 8 October 2008: 1 is to investigate MMA and DMA sorption behavior to aluminum oxide employing a multi-scale approach. Macroscopic) spectroscopic studies to examine sorption complex formation between methylarsenate and aluminum oxide. See more

  8. Entangling characterization of (SWAP)1/m and Controlled unitary gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2008-01-01T23:59:59.000Z

    We study the entangling power and perfect entangler nature of (SWAP)1/m, for m>=1, and controlled unitary (CU) gates. It is shown that (SWAP)1/2 is the only perfect entangler in the family. On the other hand, a subset of CU which is locally equivalent to CNOT is identified. It is shown that the subset, which is a perfect entangler, must necessarily possess the maximum entangling power.

  9. Entangling characterization of (SWAP)1/m and Controlled unitary gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2009-01-05T23:59:59.000Z

    We study the entangling power and perfect entangler nature of (SWAP)1/m, for m>=1, and controlled unitary (CU) gates. It is shown that (SWAP)1/2 is the only perfect entangler in the family. On the other hand, a subset of CU which is locally equivalent to CNOT is identified. It is shown that the subset, which is a perfect entangler, must necessarily possess the maximum entangling power.

  10. Photon-photon gates in Bose-Einstein condensates

    E-Print Network [OSTI]

    Arnaud Rispe; Bing He; Christoph Simon

    2010-09-30T23:59:59.000Z

    It has recently been shown that light can be stored in Bose-Einstein condensates for over a second. Here we propose a method for realizing a controlled phase gate between two stored photons. The photons are both stored in the ground state of the effective trapping potential inside the condensate. The collision-induced interaction is enhanced by adiabatically increasing the trapping frequency and by using a Feshbach resonance. A controlled phase shift of $\\pi$ can be achieved in one second.

  11. Polar Express Cards Can Only Exit Onto 3rd Ave at the Main Entry/Exit Gate, Not on 2nd Ave gate.

    E-Print Network [OSTI]

    Wagner, Diane

    Polar Express Cards Can Only Exit Onto 3rd Ave at the Main Entry/Exit Gate, Not on 2nd Ave gate Parking with UAF Polar Express Cards: Basic Explanation: Use Your Polar Express Card for Entry and Exit. Problems? If card entry doesn't work, just pull a normal parking ticket and stop in at the booth or main

  12. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    SciTech Connect (OSTI)

    Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

    2009-08-11T23:59:59.000Z

    The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

  13. Gate dielectric degradation: Pre-existing vs. generated defects

    SciTech Connect (OSTI)

    Veksler, Dmitry, E-mail: Dmitry.Veksler@sematech.org, E-mail: gennadi.bersuker@sematech.org; Bersuker, Gennadi, E-mail: Dmitry.Veksler@sematech.org, E-mail: gennadi.bersuker@sematech.org [SEMATECH Inc., 257 Fuller Rd., Albany, New York 12203 (United States)

    2014-01-21T23:59:59.000Z

    We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused primarily by activation of pre-existing defects rather than generation of new ones. In nFETs in inversion, in particular, defect activation is suggested to be associated with the capture of an injected electron: in this charged state, defects can participate in a fast exchange of charge carriers with the carrier reservoir (substrate or gate electrode) that constitutes the physical process underlying a variety of electrical measurements. The degradation caused by the activation of pre-existing defects, as opposed to that of new defect generation, is both reversible and exhibits a tendency to saturate through the duration of stress. By using the multi-phonon assisted charge transport description, it is demonstrated that the trap activation concept allows reproducing a variety of experimental results including stress time dependency of the threshold voltage, leakage current, charge pumping current, and low frequency noise. Continuous, long-term degradation described by the power law time dependency is shown to be determined by the activation of defects located in the interfacial SiO{sub 2} layer of the high-k gate stacks. The findings of this study can direct process optimization efforts towards reduction of as-grown precursors of the charge trapping defects as the major factor affecting reliability.

  14. GATE Center for Automotive Fuel Cell Systems at Virginia Tech

    SciTech Connect (OSTI)

    Douglas Nelson

    2011-05-31T23:59:59.000Z

    The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: â?¢ Expanded and updated fuel cell and vehicle technologies education programs; â?¢ Conducted industry directed research in three thrust areas â?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; â?¢ Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; â?¢ Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Techâ??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

  15. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  16. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    1998-10-06T23:59:59.000Z

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  17. Use of dMLC for implementation of dynamic respiratory-gated radiation therapy

    SciTech Connect (OSTI)

    Pepin, Eric W.; Wu, Huanmei [Purdue School of Engineering Technology, IUPUI, Indianapolis, Indiana 46202 (United States)] [Purdue School of Engineering Technology, IUPUI, Indianapolis, Indiana 46202 (United States); Shirato, Hiroki [Hokkaido University School of Medicine, Sapporo 060-8638 (Japan)] [Hokkaido University School of Medicine, Sapporo 060-8638 (Japan)

    2013-10-15T23:59:59.000Z

    Purpose: To simulate and evaluate the use of dynamic multileaf collimators (dMLC) in respiratory gating to compensate for baseline drift.Methods: Tumor motion tracking data from 30 lung tumors over 322 treatment fractions was analyzed with the finite state model. A dynamic respiratory gating window was established in real-time by determining the average positions during the previous two end-of-expiration breathing phases and centering the dMLC aperture on a weighted average of these positions. A simulated dMLC with physical motion constraints was used in dynamic gating treatment simulations. Fluence maps were created to provide a statistical description of radiation delivery for each fraction. Duty cycle was also calculated for each fraction.Results: The average duty cycle was 2.3% greater under dynamic gating conditions. Dynamic gating also showed higher fluences and less tumor obstruction. Additionally, dynamic gating required fewer beam toggles and each delivery period was longer on average than with static gating.Conclusions: The use of dynamic gating showed better performance than static gating and the physical constraints of a dMLC were shown to not be an impediment to dynamic gating.

  18. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03T23:59:59.000Z

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  19. L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect (OSTI)

    Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-04-21T23:59:59.000Z

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

  20. Photo-oxidation catalysts

    DOE Patents [OSTI]

    Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

    2009-07-14T23:59:59.000Z

    Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

  1. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01T23:59:59.000Z

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  2. Operator-Schmidt decomposition and the geometrical edges of two-qubit gates

    E-Print Network [OSTI]

    S. Balakrishnan; R. Sankaranarayanan

    2011-06-30T23:59:59.000Z

    Nonlocal two-qubit quantum gates are represented by canonical decomposition or equivalently by operator-Schmidt decomposition. The former decomposition results in geometrical representation such that all the two-qubit gates form tetrahedron within which perfect entanglers form a polyhedron. On the other hand, it is known from the later decomposition that Schmidt number of nonlocal gates can be either 2 or 4. In this work, some aspects of later decomposition are investigated. It is shown that two gates differing by local operations possess same set of Schmidt coefficients. Employing geometrical method, it is established that Schmidt number 2 corresponds to controlled unitary gates. Further, all the edges of tetrahedron and polyhedron are characterized using Schmidt strength, a measure of operator entanglement. It is found that one edge of the tetrahedron possesses the maximum Schmidt strength, implying that all the gates in the edge are maximally entangled.

  3. Operator-Schmidt decomposition and the geometrical edges of two-qubit gates

    E-Print Network [OSTI]

    Balakrishnan, S

    2010-01-01T23:59:59.000Z

    Nonlocal two-qubit quantum gates are represented by canonical decomposition or equivalently by operator-Schmidt decomposition. The former decomposition results in geometrical representation such that all the two-qubit gates form tetrahedron within which perfect entanglers form a polyhedron. On the other hand, it is known from the later decomposition that Schmidt number of nonlocal gates can be either 2 or 4. In this work, some aspects of later decomposition are investigated. It is shown that two gates differing by local operations possess same set of Schmidt coefficients. Employing geometrical method, it is established that Schmidt number 2 corresponds to controlled unitary gates. Further, all the edges of tetrahedron and polyhedron are characterized using Schmidt strength, a measure of operator entanglement. It is found that one edge of the tetrahedron possesses the maximum Schmidt strength, implying that all the gates in the edge are maximally entangled.

  4. Oxidation of propylene over copper oxide catalysts

    E-Print Network [OSTI]

    Billingsley, David Stuart

    1958-01-01T23:59:59.000Z

    results were obtained using an asbestos supported CuO-Cr203 catalyst. Venkataramam and his co-workers (66) studied the catalytic oxidation of ethylene to ethylene oxide by the fluidized bed technique using a static bed of catalyst. Precipitated Ag20... in the air-ethylene ratio to maintain good yields of ethylene oxide. Wan (68) reported the oxidation of ethylene to acetaldehyde by use of a silver catalyst in a 5/16 dnch inner diameter stainless steel tube with a catalyst bed up to 30. 3 centimeters...

  5. Cerium Oxide Coating for Oxidation Reduction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Award In order to produce power more efficiently and cleanly, the next generation of power plant boilers, turbines, solid oxide fuel cells (SOFCs) and other essential...

  6. Error Compensation of Single-Qubit Gates in a Surface Electrode Ion Trap Using Composite Pulses

    E-Print Network [OSTI]

    Emily Mount; Chingiz Kabytayev; Stephen Crain; Robin Harper; So-Young Baek; Geert Vrijsen; Steven Flammia; Kenneth R. Brown; Peter Maunz; Jungsang Kim

    2015-04-06T23:59:59.000Z

    The trapped atomic ion qubits feature desirable properties for use in a quantum computer such as long coherence times (Langer et al., 2005), high qubit measurement fidelity (Noek et al., 2013), and universal logic gates (Home et al., 2009). The quality of quantum logic gate operations on trapped ion qubits has been limited by the stability of the control fields at the ion location used to implement the gate operations. For this reason, the logic gates utilizing microwave fields (Brown et al., 2011; Shappert et al., 2013; Harty et al., 2014) have shown gate fidelities several orders of magnitude better than those using laser fields (Knill et al., 2008; Benhelm et al., 2008; Ballance et al., 2014). Here, we demonstrate low-error single-qubit gates performed using stimulated Raman transitions on an ion qubit trapped in a microfabricated chip trap. Gate errors are measured using a randomized benchmarking protocol (Knill et al., 2008; Wallman et al., 2014; Magesan et al., 2012), where amplitude error in the control beam is compensated using various pulse sequence techniques (Wimperis, 1994; Low et al., 2014). Using B2 compensation (Wimperis, 1994), we demonstrate single qubit gates with an average error per randomized Clifford group gate of $3.6(3)\\times10^{-4}$. We also show that compact palindromic pulse compensation sequences (PD$n$) (Low et al., 2014) compensate for amplitude errors as designed.

  7. 2006-2010 GATE program at Ohio State University Center for Automotive...

    Energy Savers [EERE]

    Ohio State University Center for Automotive Research: Modeling, control and system integration of advanced automotive propulsion systems 2006-2010 GATE program at Ohio State...

  8. How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated

    E-Print Network [OSTI]

    Mudd, John

    2009-05-15T23:59:59.000Z

    , utilizing some of the strategies, for the implementation of a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated....

  9. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Broader source: Energy.gov [DOE]

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  10. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and James Bartridge (CEC) discuss electric vehicle technologies with Fraser Murison Smith (right) of i-GATE NEST client, ElectraDrive. The collaborative effort is...

  11. International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Biological Control

    E-Print Network [OSTI]

    Ferrara, Katherine W.

    International Agriculture Fellowship: A Gates Foundation Grand Challenges Exploration in Endophytic Challenges Explorations Grant (see program overview) to develop crop seeds with endophytic fungal

  12. Fast Out of the Gate: How Developing Asian Countries can Prepare...

    Open Energy Info (EERE)

    TOOL Name: Fast Out of the Gate: How Developing Asian Countries can Prepare to Access International Green Growth Financing AgencyCompany Organization: USAID ComplexityEase...

  13. Local implementations of non-local quantum gates in linear entangled channel

    E-Print Network [OSTI]

    Debashis Saha; Sanket Nandan; Prasanta K. Panigrahi

    2014-08-03T23:59:59.000Z

    In this paper, we demonstrate n-party controlled unitary gate implementations locally on arbitrary remote state through linear entangled channel where control parties share entanglement with the adjacent control parties and only one of them shares entanglement with the target party. In such a network, we describe the protocol of simultaneous implementation of controlled-Hermitian gate starting from three party scenario. We also explicate the implementation of three party controlled-Unitary gate, a generalized form of To?oli gate and subsequently generalize the protocol for n-party using minimal cost.

  14. University of Illinois at Urbana Champaigns GATE Center forAdvanced...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Engines Research Domains for GATE * Biofuels and Properties * Fuel Injection Control and Optimization * Electrospray Systems for Fuels * Fuel Injection, Ignition, Combustion and...

  15. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron

    E-Print Network [OSTI]

    Ye, Peide "Peter"

    Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors the results of self-heating simulations of the GaN-based MOS-HEMTs, including hot electron and quantum effects of the gate and source/drain extension lengths on both the output performance and self-heating is discussed

  16. (Non) formation of methanol by direct hydrogenation of formate...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    (Non) formation of methanol by direct hydrogenation of formate on copper catalysts. (Non) formation of methanol by direct hydrogenation of formate on copper catalysts. Abstract: We...

  17. Ocean Gate, New Jersey: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page onYou are now leaving Energy.gov You are now leaving Energy.gov YouKizildere I Geothermal Pwer PlantMunhall,Missouri: EnergyExcellence SeedNunn,andOasys WaterCity, NewGate, New Jersey:

  18. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office of Science (SC) Environmental AssessmentsGeoffrey Campbelllong version) The U.S.short version)Gate

  19. Creating fluid injectivity in tar sands formations

    DOE Patents [OSTI]

    Stegemeier, George Leo; Beer, Gary Lee; Zhang, Etuan

    2012-06-05T23:59:59.000Z

    Methods for treating a tar sands formation are described herein. Methods for treating a tar sands may include heating a portion of a hydrocarbon layer in the formation from one or more heaters located in the portion. The heat may be controlled to increase the permeability of at least part of the portion to create an injection zone in the portion with an average permeability sufficient to allow injection of a fluid through the injection zone. A drive fluid and/or an oxidizing fluid may be provided into the injection zone. At least some hydrocarbons including mobilized hydrocarbons are produced from the portion.

  20. Creating fluid injectivity in tar sands formations

    DOE Patents [OSTI]

    Stegemeier, George Leo; Beer, Gary Lee; Zhang, Etuan

    2010-06-08T23:59:59.000Z

    Methods for treating a tar sands formation are described herein. Methods for treating a tar sands may include heating a portion of a hydrocarbon layer in the formation from one or more heaters located in the portion. The heat may be controlled to increase the permeability of at least part of the portion to create an injection zone in the portion with an average permeability sufficient to allow injection of a fluid through the injection zone. A drive fluid and/or an oxidizing fluid may be provided into the injection zone. At least some hydrocarbons are produced from the portion.

  1. Dosimetric evaluation of the interplay effect in respiratory-gated RapidArc radiation therapy

    SciTech Connect (OSTI)

    Riley, Craig [Department of Radiation Oncology, University of Pittsburgh School of Medicine, Pittsburgh, Pennsylvania 15213 (United States)] [Department of Radiation Oncology, University of Pittsburgh School of Medicine, Pittsburgh, Pennsylvania 15213 (United States); Yang, Yong, E-mail: yangy2@upmc.edu; Li, Tianfang; Zhang, Yongqian; Heron, Dwight E.; Huq, M. Saiful [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)] [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)

    2014-01-15T23:59:59.000Z

    Purpose: Volumetric modulated arc therapy (VMAT) with gating capability has had increasing adoption in many clinics in the United States. In this new technique, dose rate, gantry rotation speed, and the leaf motion speed of multileaf collimators (MLCs) are modulated dynamically during gated beam delivery to achieve highly conformal dose coverage of the target and normal tissue sparing. Compared with the traditional gated intensity-modulated radiation therapy technique, this complicated beam delivery technique may result in larger dose errors due to the intrafraction tumor motion. The purpose of this work is to evaluate the dosimetric influence of the interplay effect for the respiration-gated VMAT technique (RapidArc, Varian Medical Systems, Palo Alto, CA). Our work consisted of two parts: (1) Investigate the interplay effect for different target residual errors during gated RapidArc delivery using a one-dimensional moving phantom capable of producing stable sinusoidal movement; (2) Evaluate the dosimetric influence in ten clinical patients’ treatment plans using a moving phantom driven with a patient-specific respiratory curve. Methods: For the first part of this study, four plans were created with a spherical target for varying residual motion of 0.25, 0.5, 0.75, and 1.0 cm. Appropriate gating windows were applied for each. The dosimetric effect was evaluated using EDR2 film by comparing the gated delivery with static delivery. For the second part of the project, ten gated lung stereotactic body radiotherapy cases were selected and reoptimized to be delivered by the gated RapidArc technique. These plans were delivered to a phantom, and again the gated treatments were compared to static deliveries by the same methods. Results: For regular sinusoidal motion, the dose delivered to the target was not substantially affected by the gating windows when evaluated with the gamma statistics, suggesting the interplay effect has a small role in respiratory-gated RapidArc therapy. Varied results were seen when gated therapy was performed on the patient plans that could only be attributed to differences in patient respiratory patterns. Patients whose plans had the largest percentage of pixels failing the gamma statistics exhibited irregular breathing patterns including substantial interpatient variation in depth of respiration. Conclusions: The interplay effect has a limited impact on gated RapidArc therapy when evaluated with a linear phantom. Variations in patient breathing patterns, however, are of much greater clinical significance. Caution must be taken when evaluating patients’ respiratory efforts for gated arc therapy.

  2. Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional

    E-Print Network [OSTI]

    E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

    2009-05-21T23:59:59.000Z

    We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

  3. Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films

    SciTech Connect (OSTI)

    Sagunova, I. V., E-mail: pcfme@miee.ru; Shevyakov, V. I.; Gavrilov, S. A.; Belov, A. N. [Moscow Institute of Electronic Technology (Technical University) (Russian Federation)

    2010-12-15T23:59:59.000Z

    The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.

  4. Transient behaviour of dense catalytic membranes based on Cu-and Co-doped Bi4V2O11 (BIMEVOX) in the oxidation of propene and propane

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    adsorbed oxygens which mostly lead to the formation of carbon oxides [1]. In usual fixed or fluidised bed. The oxidation of n- butane to maleic anhydride in a circulating fluid bed reactor was the first industrial

  5. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S [Madurai Medical College ' Govt. Rajaji Hospital, Madurai (India)

    2014-06-01T23:59:59.000Z

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  6. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01T23:59:59.000Z

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  7. Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

    E-Print Network [OSTI]

    Hashemi, Pouya

    A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-?/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI ...

  8. THE MICROSTRUCTURAL LOCATION OF THE INTERGRANULAR METAL OXIDE PHASE IN A ZINC OXIDE VARISTOR

    E-Print Network [OSTI]

    Clarke, D. E

    2011-01-01T23:59:59.000Z

    OXIDE PHASE IN A ZINC OXIDE VARISTOR MICROSI'RUCTIJRALMETAL OXIDE PHASE IN A ZINC OXIDE VARISTOR David R. Clarke

  9. Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate the implementation of numerous distinct power transistor gate drivers, the control signal insulation is becoming more results will be shown in order to validate the functionality. I. INTRODUCTION An insulation system

  10. Classification : Original Article VOLTAGE-GATED SODIUM CHANNELS POTENTIATE THE INVASIVE

    E-Print Network [OSTI]

    Boyer, Edmond

    - gated sodium channels in non-small-cell lung cancer cell lines. Functional voltage-gated sodium channels cancerous cell lines H23, H460 and Calu-1 possess functional sodium channels while normal and weakly metastatic cell lines do not. While all the cell lines expressed mRNA for numerous sodium channel isoforms

  11. [ ]February 2014 The original 1957 Gates pile driving formula is an empirically derived dynamic formula

    E-Print Network [OSTI]

    Harms, Kyle E.

    [ ]February 2014 PROBLEM The original 1957 Gates pile driving formula is an empirically derived dynamic formula that is used to predict pile capacity in the field during pile installation.The original Gates formula tends to over-predict pile capacity for low driving resistances and under-predict pile

  12. Gated Si nanowires for large thermoelectric power factors Neophytos Neophytou1

    E-Print Network [OSTI]

    1 Gated Si nanowires for large thermoelectric power factors Neophytos Neophytou1 and Hans Kosina2 1.Neophytou@warwick.ac.uk Abstract We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients

  13. Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy

    E-Print Network [OSTI]

    Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy monitoring and gating purposes. The fiber-optic stethoscope system offers a novel approach to measuring cardiac activity that, unlike the ECG, is immune to electromagnetic effects. The fiber-optic stethoscope

  14. An Array-Based Test Circuit for Fully Automated Gate Dielectric Breakdown Characterization

    E-Print Network [OSTI]

    Kim, Chris H.

    An Array-Based Test Circuit for Fully Automated Gate Dielectric Breakdown Characterization John for efficiently characterizing gate dielectric breakdown. Such a design is highly beneficial when studying this statistical process, where up to thousands of samples are needed to create an accurate time to breakdown

  15. Efficient polarization gating of high-order harmonic generation by polarization-shaped ultrashort pulses

    E-Print Network [OSTI]

    Silberberg, Yaron

    Polarization gating of high-order harmonic generation takes advantage of the significant reduction of har for generation of polarization gated pulses using wave-plate combinations is inefficient, and propose photon energy radiation from the harmonic spectrum. Need- less to say, the generation of near single

  16. Gating Currents from Kv7 Channels Carrying Neuronal Hyperexcitability Mutations in the Voltage-Sensing Domain

    E-Print Network [OSTI]

    Bezanilla, Francisco

    unable to provide a detailed assessment of the structural rearrangements underlying channel gating.2 channels both functionally and structurally, were used for these experiments. The data obtained showed activation of gating-pore currents at depolarized potentials. These results reveal that distinct molecular

  17. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias, E-mail: Matthias.Ernzerhof@UMontreal.ca [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)] [Département de Chimie, Université de Montréal, C.P. 6128 Succursale A, Montréal, Quebec H3C 3J7 (Canada)

    2014-03-21T23:59:59.000Z

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  18. Controlling the Performance of a Three-Terminal Molecular Transistor: Conformational versus Conventional Gating

    E-Print Network [OSTI]

    Pandey, Ravi

    University, Houghton, Michigan 49931, United States Shashi P. Karna* U.S. Army Research Laboratory, Weapons *S Supporting Information ABSTRACT: The effect of conformational changes in the gate arm of a three of the gate field. The current modulation is found to reach its maximum only under exclusive effect of voltage

  19. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  20. Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*

    E-Print Network [OSTI]

    Beebe, David J.

    Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

  1. Probabilistic quantum gates between remote atoms through interference of optical frequency qubits

    E-Print Network [OSTI]

    Madsen, Martin John

    Probabilistic quantum gates between remote atoms through interference of optical frequency qubits L gates on remote trapped atom qubits through interference of optical frequency qubits. The method does be localized well under the Lamb-Dicke limit through laser cooling in a strong trap, the elimination

  2. High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator

    E-Print Network [OSTI]

    1 High Performance Polycrystalline SiGe Thin Film Transistors Using Al2O3 Gate Insulator Zhonghe as the gate insulator for low temperature (SiGe thin film transistors (TFTs) has been between the Al2O3 and the SiGe channel layer is sufficiently passivated to make Al2O3 a better alternative

  3. Selective Electrocatalytic Activity of Ligand Stabilized Copper Oxide Nanoparticles

    SciTech Connect (OSTI)

    Kauffman, Douglas R.; Ohodnicki, Paul R.; Kail, Brian W; Matranga, Christopher

    2011-01-01T23:59:59.000Z

    Ligand stabilization can influence the surface chemistry of Cu oxide nanoparticles (NPs) and provide unique product distributions for electrocatalytic methanol (MeOH) oxidation and CO{sub 2} reduction reactions. Oleic acid (OA) stabilized Cu{sub 2}O and CuO NPs promote the MeOH oxidation reaction with 88% and 99.97% selective HCOH formation, respectively. Alternatively, CO{sub 2} is the only reaction product detected for bulk Cu oxides and Cu oxide NPs with no ligands or weakly interacting ligands. We also demonstrate that OA stabilized Cu oxide NPs can reduce CO{sub 2} into CO with a {approx}1.7-fold increase in CO/H{sub 2} production ratios compared to bulk Cu oxides. The OA stabilized Cu oxide NPs also show 7.6 and 9.1-fold increases in CO/H{sub 2} production ratios compared to weakly stabilized and non-stabilized Cu oxide NPs, respectively. Our data illustrates that the presence and type of surface ligand can substantially influence the catalytic product selectivity of Cu oxide NPs.

  4. Analytical approach to swift non-leaky entangling gates in superconducting qubits

    E-Print Network [OSTI]

    Sophia E. Economou; Edwin Barnes

    2014-11-03T23:59:59.000Z

    We develop schemes for designing pulses that implement fast and precise entangling quantum gates in superconducting qubit systems despite the presence of nearby harmful transitions. Our approach is based on purposely involving the nearest harmful transition in the quantum evolution instead of trying to avoid it. Using analytical tools, we design simple microwave control fields that implement maximally entangling gates with fidelities exceeding 99% in times as low as 40 ns. We demonstrate our approach in a two-qubit circuit QED system by designing the two most important quantum entangling gates: a conditional-NOT gate and a conditional-Z gate. Our results constitute an important step toward overcoming the problem of spectral crowding, one of the primary challenges in controlling multi-qubit systems.

  5. A proposal for the realization of universal quantum gates via superconducting qubits inside a cavity

    SciTech Connect (OSTI)

    Obada, A.-S.F. [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt)] [Faculty of Science, Al-Azhar University, Nasr City, Cairo (Egypt); Hessian, H.A. [Faculty of Science, Assiut University, Assiut (Egypt)] [Faculty of Science, Assiut University, Assiut (Egypt); Mohamed, A.-B.A. [Faculty of Science, Assiut University, Assiut (Egypt) [Faculty of Science, Assiut University, Assiut (Egypt); Community College, Salman Bin Abdulaziz University, Al-Aflaj (Saudi Arabia); Homid, Ali H., E-mail: alihimad@yahoo.com [Faculty of Science, Al-Azhar University, Assiut (Egypt)

    2013-07-15T23:59:59.000Z

    A family of quantum logic gates is proposed via superconducting (SC) qubits coupled to a SC-cavity. The Hamiltonian for SC-charge qubits inside a single mode cavity is considered. Three- and two-qubit operations are generated by applying a classical magnetic field with the flux. Therefore, a number of quantum logic gates are realized. Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates. -- Highlights: •A family of quantum logic gates is proposed via SC-qubits coupled to a cavity. •Three- and two-qubit operations are generated via a classical field with the flux. •Numerical simulations and calculation of the fidelity are used to prove the success of these operations for these gates.

  6. Experimental Estimation of Average Fidelity of a Clifford Gate on a 7-qubit Quantum Processor

    E-Print Network [OSTI]

    Dawei Lu; Hang Li; Denis-Alexandre Trottier; Jun Li; Aharon Brodutch; Anthony P. Krismanich; Ahmad Ghavami; Gary I. Dmitrienko; Guilu Long; Jonathan Baugh; Raymond Laflamme

    2014-11-28T23:59:59.000Z

    Quantum gates in experiment are inherently prone to errors that need to be characterized before they can be corrected. Full characterization via quantum process tomography is impractical and often unnecessary. For most practical purposes, it is enough to estimate more general quantities such as the average fidelity. Here we use a unitary 2-design and twirling protocol for efficiently estimating the average fidelity of Clifford gates, to certify a 7-qubit entangling gate in a nuclear magnetic resonance quantum processor. Compared with more than $10^8$ experiments required by full process tomography, we conducted 1656 experiments to satisfy a statistical confidence level of 99%. The average fidelity of this Clifford gate in experiment is 55.1%, and rises to 87.5% if the infidelity due to decoherence is removed. The entire protocol of certifying Clifford gates is efficient and scalable, and can easily be extended to any general quantum information processor with minor modifications.

  7. Thin film three-dimensional topological insulator metal-oxide-semiconductor field-effect-transistors: A candidate for sub-10?nm devices

    SciTech Connect (OSTI)

    Akhavan, N. D., E-mail: nima.dehdashti@uwa.edu.au; Jolley, G.; Umana-Membreno, G. A.; Antoszewski, J.; Faraone, L. [Department of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley, WA 6009 (Australia)

    2014-08-28T23:59:59.000Z

    Three-dimensional (3D) topological insulators (TI) are a new state of quantum matter in which surface states reside in the bulk insulating energy bandgap and are protected by time-reversal symmetry. It is possible to create an energy bandgap as a consequence of the interaction between the conduction band and valence band surface states from the opposite surfaces of a TI thin film, and the width of the bandgap can be controlled by the thin film thickness. The formation of an energy bandgap raises the possibility of thin-film TI-based metal-oxide-semiconductor field-effect-transistors (MOSFETs). In this paper, we explore the performance of MOSFETs based on thin film 3D-TI structures by employing quantum ballistic transport simulations using the effective continuous Hamiltonian with fitting parameters extracted from ab-initio calculations. We demonstrate that thin film transistors based on a 3D-TI structure provide similar electrical characteristics compared to a Si-MOSFET for gate lengths down to 10?nm. Thus, such a device can be a potential candidate to replace Si-based MOSFETs in the sub-10?nm regime.

  8. Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide

    E-Print Network [OSTI]

    Kim, Sehun

    Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO) and reduced graphene oxide (rGO) films grown on silicon substrate to cause the aniline to azobenzene oxidation

  9. Investigation of the novel attributes of a single-halo double gate SOI MOSFET: 2D simulation study

    E-Print Network [OSTI]

    Kumar, M. Jagadesh

    of single halo to the double gate structure results in threshold voltage roll-up, reduced DIBL, high drain the drain voltage variations. This work illustrates the benefits of high performance DG-SH SOI MOS devices gate pþ poly and back gate nþ poly) are becoming popular since this type of structure provides

  10. A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates

    E-Print Network [OSTI]

    Islam, Kazi Inamul

    1995-01-01T23:59:59.000Z

    This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition...

  11. An investigation of the contact between the Oakville and Catahoula Formations in Grimes County, Texas

    E-Print Network [OSTI]

    Sveter, Owen Douglas

    1969-01-01T23:59:59.000Z

    University Directed by: Mr. Clay L. Seward The study investigated the contact between two Tertiary forma- tions, the Catahoula and the Oakville Formations. The area investi- gated was in Grimes County, Texas, near the city of Navasota. Twenty-two borings... were drilled in the area to obtain the necessary information. Laboratory methods such as Sand-Silt-Clay analysis, Calcium Carbonate Content analysis, and X-ray analysis of the clays, were used to investigate and describe the cores obtained from...

  12. Oxidation Resistant Graphite Studies

    SciTech Connect (OSTI)

    W. Windes; R. Smith

    2014-07-01T23:59:59.000Z

    The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

  13. Development of a Thermal Oxidizer for Distributed Microturbine Based Generation

    SciTech Connect (OSTI)

    Tom Barton

    2009-03-01T23:59:59.000Z

    This project concerns the replacement of the catalytic bed in a microturbine with a thermal oxidizer. The advantage of a thermal oxidizer over a traditional combustion chamber is that the length and temperature of the device allows the volatile species to oxidize relatively slowly and without a flame front. With no flame, the temperature increase throughout the unit is spread over a much larger volume so there is no hot spot for thermal NO{sub x} formation, and the gas Btu level does not have to be above the ignition concentration. Project specific objectives included assessment of the materials and performance requirements of the thermal oxidizer, design the thermal oxidizer system, fabrication of the thermal oxidizer, testing of the oxidizer's performance in concert with the microturbine and comparison of the performance of the oxidizer with catalytic beds and traditional combustion chambers. The thermal oxidizer was designed and fabricated with the assistance of High Country Fabrication of Casper, Wyoming. The design consists of a long set of tubes surrounded by a packed bed of loose ceramic material. The outer vessel containing the tubes and packing is a 3-foot diameter steel shell with multiple layers of thermal insulation. After the metal components were fabricated, the vessel was shipped to Denver where the insulation was poured. The unit was shipped to the cosponsor site for integration with the 100 kW microturbine device. Connection of the thermal oxidizer to the Elliot microturbine turned out to be problematic. The high flow rate of gas tended to push the hot zone out of the oxidizer as assembled. The research team identified several approaches to improve the oxidizer performance including a longer gas path, increased residence time, higher surface area packing material and improved combustion catalysts. The cosponsor is working with an engineering form with oxidizer experience to reconfigure the hardware before moving to a field trial on landfill gas.

  14. Electrically-gated near-field radiative thermal transistor

    E-Print Network [OSTI]

    Yang, Yue

    2015-01-01T23:59:59.000Z

    In this work, we propose a near-field radiative thermal transistor made of two graphene-covered silicon carbide (SiC) plates separated by a nanometer vacuum gap. Thick SiC plates serve as the thermal "source" and "drain", while graphene sheets function as the "gate" to modulate the near-field photon tunneling by tuning chemical potential with applied voltage biases symmetrically or asymmetrically. The radiative heat flux calculated from fluctuational electrodynamics significantly varies with graphene chemical potentials, which can tune the coupling between graphene plasmon across the vacuum gap. Thermal modulation, switching, and amplification, which are the key features required for a thermal transistor, are theoretically realized and analyzed. This work will pave the way to active thermal management, thermal circuits, and thermal computing.

  15. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

    1994-06-07T23:59:59.000Z

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  16. Optimal Control for Generating Quantum Gates in Open Dissipative Systems

    E-Print Network [OSTI]

    T. Schulte-Herbrueggen; A. Spoerl; N. Khaneja; S. J. Glaser

    2009-05-17T23:59:59.000Z

    Optimal control methods for implementing quantum modules with least amount of relaxative loss are devised to give best approximations to unitary gates under relaxation. The potential gain by optimal control using relaxation parameters against time-optimal control is explored and exemplified in numerical and in algebraic terms: it is the method of choice to govern quantum systems within subspaces of weak relaxation whenever the drift Hamiltonian would otherwise drive the system through fast decaying modes. In a standard model system generalising decoherence-free subspaces to more realistic scenarios, openGRAPE-derived controls realise a CNOT with fidelities beyond 95% instead of at most 15% for a standard Trotter expansion. As additional benefit it requires control fields orders of magnitude lower than the bang-bang decouplings in the latter.

  17. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07T23:59:59.000Z

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  18. After-gate attack on a quantum cryptosystem

    E-Print Network [OSTI]

    Carlos Wiechers; Lars Lydersen; Christoffer Wittmann; Dominique Elser; Johannes Skaar; Christoph Marquardt; Vadim Makarov; Gerd Leuchs

    2010-09-14T23:59:59.000Z

    We present a method to control the detection events in quantum key distribution systems that use gated single-photon detectors. We employ bright pulses as faked states, timed to arrive at the avalanche photodiodes outside the activation time. The attack can remain unnoticed, since the faked states do not increase the error rate per se. This allows for an intercept-resend attack, where an eavesdropper transfers her detection events to the legitimate receiver without causing any errors. As a side effect, afterpulses, originating from accumulated charge carriers in the detectors, increase the error rate. We have experimentally tested detectors of the system id3110 (Clavis2) from ID Quantique. We identify the parameter regime in which the attack is feasible despite the side effect. Furthermore, we outline how simple modifications in the implementation can make the device immune to this attack.

  19. Formation of Secondary Organic Aerosol from the Direct Photolytic Generation of Organic Radicals

    E-Print Network [OSTI]

    Kessler, Sean Herbert

    The immense complexity inherent in the formation of secondary organic aerosol (SOA)—due primarily to the large number of oxidation steps and reaction pathways involved—has limited the detailed understanding of its underlying ...

  20. Textures of oxide films grown on nickel electrodeposits

    SciTech Connect (OSTI)

    Czerwinski, F.; Palumbo, G.; Szpunar, J.A.

    1998-10-13T23:59:59.000Z

    High-temperature corrosion properties of heat-resistant materials depend on the formation of a protective oxide layer on their surface, which inhibits further degradation. Among many factors affecting the oxide growth rate and its resistance to spallation, the crystallographic texture of the metallic substrate plays an important role. In this study, the authors explore the possibilities of modifying the surface texture of polycrystalline Ni using electrodeposition. In addition to analyzing the texture of metallic substrates and its evolution at high temperatures, the texture of oxide formed on each substrate is also considered.

  1. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect (OSTI)

    Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

    2014-07-01T23:59:59.000Z

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  2. METAL OXIDE NANOPARTICLES

    SciTech Connect (OSTI)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01T23:59:59.000Z

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  3. ABSTRACT & DISSERTATION FORMAT GUIDELINES

    E-Print Network [OSTI]

    Lu, Yi

    2 ABSTRACT & DISSERTATION FORMAT GUIDELINES The Knowledge Navigation Center (second floor these guidelines. The most up-to-date version of the Abstract and Dissertation Format Guidelines is available;2 Abstract Format Guidelines ABSTRACT Title of the Dissertation by by Student's Name Chair: Chair's name Text

  4. Barium oxide, calcium oxide, magnesia, and alkali oxide free glass

    DOE Patents [OSTI]

    Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

    2013-09-24T23:59:59.000Z

    A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

  5. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01T23:59:59.000Z

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  6. Experimental implementation of the optimal linear-optical controlled phase gate

    E-Print Network [OSTI]

    Karel Lemr; Antonin Cernoch; Jan Soubusta; Konrad Kieling; Jens Eisert; Miloslav Dusek

    2010-07-27T23:59:59.000Z

    We report on the first experimental realization of optimal linear-optical controlled phase gates for arbitrary phases. The realized scheme is entirely flexible in that the phase shift can be tuned to any given value. All such controlled phase gates are optimal in the sense that they operate at the maximum possible success probabilities that are achievable within the framework of any postselected linear-optical implementation. The quantum gate is implemented using bulk optical elements and polarization encoding of qubit states. We have experimentally explored the remarkable observation that the optimum success probability is not monotone in the phase.

  7. Repeat-until-success cubic phase gate for universal continuous-variable quantum computation

    E-Print Network [OSTI]

    Kevin Marshall; Raphael Pooser; George Siopsis; Christian Weedbrook

    2014-12-01T23:59:59.000Z

    In order to achieve universal quantum computation using continuous variables, one needs to jump out of the set of Gaussian operations and have a non-Gaussian element, such as the cubic phase gate. However, such a gate is currently very difficult to implement in practice. Here we introduce an experimentally viable 'repeat-until-success' approach to generating the cubic phase gate, which is achieved using sequential photon subtractions and Gaussian operations. We find that our scheme offers benefits in terms of the expected time until success, although we require a primitive quantum memory.

  8. Gates controlled parallel-coupled double quantum dot on both single layer and bilayer graphene

    E-Print Network [OSTI]

    Lin-Jun Wang; Guo-Ping Guo; Da Wei; Gang Cao; Tao Tu; Ming Xiao; Guang-Can Guo; A. M. Chang

    2011-04-22T23:59:59.000Z

    Here we report the fabrication and quantum transport measurements of gates controlled parallel-coupled double quantum dot on both bilayer and single layer graphene. It is shown that the interdot coupling strength of the parallel double dots can be effectively tuned from weak to strong regime by both the in-plane plunger gates and back gate. All the relevant energy scales and parameters of the graphene parallel-coupled double dot can be extracted from the honeycomb charge stability diagrams revealed through the transport measurements.

  9. Interactions of Fe(II) with the iron oxidizing bacterium Rhodopseudomonas palustris TIE-1

    E-Print Network [OSTI]

    Bird, Lina J. (Lina Joana)

    2013-01-01T23:59:59.000Z

    Microbial anaerobic iron oxidation has long been of interest to biologists and geologists, both as a possible mechanism for the creation of banded iron formations before the rise of oxygen, and as a model system for organisms ...

  10. NEBULAR FORMATION OF FAYALITIC OLIVINE: INEFFECTIVENESS OF DUST ENRICHMENT. A. V. Fedkin1

    E-Print Network [OSTI]

    Grossman, Lawrence

    NEBULAR FORMATION OF FAYALITIC OLIVINE: INEFFECTIVENESS OF DUST ENRICHMENT. A. V. Fedkin1 and L temperature, and thus in a nebular region more oxidized than solar gas, pre- sumably due to enrichment in dust of regions enriched in dust relative to its complementary gas yields systems more oxidizing than a solar gas

  11. Cerium Oxide Coating for Oxidation Reduction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative1 First Use of Energy for All Purposes (Fuel and Nonfuel), 2002; Level: National5Sales for4,645U.S. DOE Office511041clothAdvanced Materials Advanced. C o w l i t z C oCNMSStaffCerium Oxide Coating for Oxidation

  12. Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors

    SciTech Connect (OSTI)

    Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

    1998-10-14T23:59:59.000Z

    GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

  13. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

    1988-01-01T23:59:59.000Z

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  14. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04T23:59:59.000Z

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  15. Reducible oxide based catalysts

    DOE Patents [OSTI]

    Thompson, Levi T.; Kim, Chang Hwan; Bej, Shyamal K.

    2010-04-06T23:59:59.000Z

    A catalyst is disclosed herein. The catalyst includes a reducible oxide support and at least one noble metal fixed on the reducible oxide support. The noble metal(s) is loaded on the support at a substantially constant temperature and pH.

  16. INFLUENCE OF TEMPERATURE ON NICKEL SORPTION ON CLAY MINERAL AND OXIDE SURFACES. K. G. Scheckel1

    E-Print Network [OSTI]

    Sparks, Donald L.

    INFLUENCE OF TEMPERATURE ON NICKEL SORPTION ON CLAY MINERAL AND OXIDE SURFACES. K. G. Scheckel1- ues are within the range of mineral formation which sup- ports previous findings of nickel precipitation on these mineral and oxide surfaces. Conclusions: Sorption of nickel on the mineral phases results

  17. Danish Solid Oxide Fuel Cell project: DK-SOFC 1997-1999

    E-Print Network [OSTI]

    Danish Solid Oxide Fuel Cell project: DK-SOFC 1997-1999 Contracts no. ENS 1443/97-0003, ENS 1443 the format of annual- and final reporting from the Danish Solid Oxide Fuel Cell projects. From then on, Denmark #12;Preface It was decided medio 2000 at the 22th DK-SOFC programme board meeting to change

  18. Integrated Quantum Controlled-NOT Gate Based on Dielectric-Loaded Surface Plasmon Polariton Waveguide

    E-Print Network [OSTI]

    S. M. Wang; Q. Q. Cheng; Y. X. Gong; P. Xu; L. Li; T. Li; S. N. Zhu

    2014-08-09T23:59:59.000Z

    It has been proved that surface plasmon polariton (SPP) can well conserve and transmit the quantum nature of entangled photons. Therefore, further utilization and manipulation of such quantum nature of SPP in a plasmonic chip will be the next task for scientists in this field. In quantum logic circuits, the controlled-NOT (CNOT) gate is the key building block. Here, we implement the first plasmonic quantum CNOT gate with several-micrometer footprint by utilizing a single polarization-dependent beam-splitter (PDBS) fabricated on the dielectric-loaded SPP waveguide (DLSPPW). The quantum logic function of the CNOT gate is characterized by the truth table with an average fidelity of. Its entangling ability to transform a separable state into an entangled state is demonstrated with the visibilities of and for non-orthogonal bases. The DLSPPW based CNOT gate is considered to have good integratability and scalability, which will pave a new way for quantum information science.

  19. Organic Nanodielectrics for Low Voltage Carbon Nanotube Thin Film Transistors and Complementary Logic Gates

    E-Print Network [OSTI]

    Rogers, John A.

    illustrates the device layout which includes patterned metal source and drain electrodes, a random SWNT serving as substrate and back gate. The SAS nanodielectric multilayer was deposited via solution methods- lithographic patterning of source and drain electrodes

  20. The robustness of magic state distillation against errors in Clifford gates

    E-Print Network [OSTI]

    Jochym-O'Connor, Tomas; Helou, Bassam; Laflamme, Raymond

    2012-01-01T23:59:59.000Z

    Quantum error correction and fault-tolerance have provided the possibility for large scale quantum computations without a detrimental loss of quantum information. A very natural class of gates for fault-tolerant quantum computation is the Clifford gate set and as such their usefulness for universal quantum computation is of great interest. Clifford group gates augmented by magic state preparation give the possibility of simulating universal quantum computation. However, experimentally one cannot expect to perfectly prepare magic states. Nonetheless, it has been shown that by repeatedly applying operations from the Clifford group and measurements in the Pauli basis, the fidelity of noisy prepared magic states can be increased arbitrarily close to a pure magic state [1]. We investigate the robustness of magic state distillation to perturbations of the initial states to arbitrary locations in the Bloch sphere due to noise. Additionally, we consider a depolarizing noise model on the quantum gates in the decoding ...

  1. Electrolyte-gated graphene field-effect transistors : modeling and applications

    E-Print Network [OSTI]

    Mackin, Charles Edward

    2015-01-01T23:59:59.000Z

    This work presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated ...

  2. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  3. Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by The Ohio State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy...

  4. pH sensing properties of graphene solution-gated field-effect transistors

    E-Print Network [OSTI]

    Mailly-Giacchetti, Benjamin

    2013-01-01T23:59:59.000Z

    The use of graphene grown by chemical vapor deposition to fabricate solution-gated field-effect transistors (SGFET) on different substrates is reported. SGFETs were fabricated using graphene transferred on poly(ethylene ...

  5. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE center of excellence...

  6. All-Optical Switch and Transistor Gated by One Stored Photon

    E-Print Network [OSTI]

    Chen, Wenlan

    The realization of an all-optical transistor, in which one “gate” photon controls a “source” light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical ...

  7. A linear programming solution to the gate assignment problem at airport terminals

    E-Print Network [OSTI]

    Mangoubi, Rami

    1980-01-01T23:59:59.000Z

    This research solves the flight-to-gate assignment problem at airports in such a way as to minimize, or at least reduce, walking distances for passengers inside terminals. Two solution methods are suggested. The first is ...

  8. Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  9. Lessons learned in the design and erection of box girder bridges from the West Gate collapse

    E-Print Network [OSTI]

    Burton, Alia Christine

    2007-01-01T23:59:59.000Z

    The West Gate Bridge, intended to span the Yarra River in Australia, collapsed during its third year of construction in 1970. Investigation into the project revealed numerous issues in the bridge's design and construction. ...

  10. Energy-aware architectures, circuits and CAD for field programmable gate arrays

    E-Print Network [OSTI]

    Honoré, Francis

    2006-01-01T23:59:59.000Z

    Field Programmable Gate Arrays (FPGAs) are a class of hardware reconfigurable logic devices based on look-up tables (LUTs) and programmable interconnect that have found broad acceptance for a wide range of applications. ...

  11. The civic forum in ancient Israel : the form, function, and symbolism of city gates

    E-Print Network [OSTI]

    Frese, Daniel Allan

    2012-01-01T23:59:59.000Z

    of City Gates by Daniel Allan Frese Doctor of Philosophy inC. Michael Hall, and Allan M. Williams. Oxford: Blackwell,in History by Daniel Allan Frese Committee in Charge:

  12. Penn State DOE GATE Center of Exellence for In-Vehicle, High...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GATE CENTER OF EXCELLENCE FOR IN-VEHICLE, HIGH-POWER ENERGY STORAGE SYSTEMS DOE Merit Review, February 28, 2008 Joel Anstrom, Director "This presentation does not...

  13. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  14. Transient Turbulent Flow Simulation with Water Model Validation and Application to Slide Gate Dithering

    E-Print Network [OSTI]

    Thomas, Brian G.

    ) 244-6534 Email: bgthomas@illinois.edu Bruce Forman and Hongbin Yin ArcelorMittal Global R&D East) 399-3899 Email: bruce.forman@arcelormittal.com, Hongbin.Yin@arcelormittal.com ABSTRACT Slide gate

  15. X-ray lithographic alignment and overlay applied to double-gate MOSFET fabrication

    E-Print Network [OSTI]

    Meinhold, Mitchell W., 1972-

    2003-01-01T23:59:59.000Z

    Double-gate MOSFETs represent a significant solution to transistor scaling problems and promise a dramatic improvement in both performance and power consumption. In this work, a planar lithographic process is presented ...

  16. Formation of Iron Nanoparticles and Increase in Iron Reactivity in

    E-Print Network [OSTI]

    Benning, Liane G.

    each on presieved (goethite suspensions. Microscopic analyses of the processed soil and goethite samples reveal the neo-formation of Fe-rich nanoparticle aggregates, which were(III) oxide (mainly goethite or hematite) and clay minerals. At circumneutral pH, the solubility of Fe

  17. Modelling of silicon oxynitridation by nitrous oxide using the reaction rate approach

    SciTech Connect (OSTI)

    Dominique Krzeminski, Christophe, E-mail: christophe.krzeminski@isen.fr [Départment ISEN, IEMN-UMR-8520, 41 Boulevard Vauban, 59046 Lille Cedex (France)

    2013-12-14T23:59:59.000Z

    Large technological progress in oxynitridation processing leads to the introduction of silicon oxynitride as ultra-thin gate oxide. On the theoretical side, few studies have been dedicated to the process modelling of oxynitridation. Such an objective is a considerable challenge regarding the various atomistic mechanisms occurring during this fabrication step. In this article, some progress performed to adapt the reaction rate approach for the modelling of oxynitride growth by a nitrous ambient are reported. The Ellis and Buhrman's approach is used for the gas phase decomposition modelling. Taking into account the mass balance of the species at the interface between the oxynitride and silicon, a minimal kinetic model describing the oxide growth has been calibrated and implemented. The influence of nitrogen on the reaction rate has been introduced in an empirical way. The oxidation kinetics predicted with this minimal model compares well with several experiments.

  18. Scheme for a linear-optical controlled-phase gate with programmable phase shift

    E-Print Network [OSTI]

    Karel Lemr; Karol Bartkiewicz; Antonín ?ernoch

    2015-03-20T23:59:59.000Z

    We propose a linear-optical scheme for a controlled-phase gate with tunable phase shift set by a program qubit. Analysis of the scheme is provided with considerations for experimental feasibility. We also discuss options for increasing the success probability up to 1/12 which is close the the optimal success probability of a non-programmable tunable controlled-phase gate.

  19. Photon-photon gate via the interaction between two collective Rydberg excitations

    E-Print Network [OSTI]

    Mohammadsadegh Khazali; Khabat Heshami; Christoph Simon

    2014-07-28T23:59:59.000Z

    We propose a scheme for a deterministic controlled-phase gate between two photons based on the strong interaction between two stationary collective Rydberg excitations in an atomic ensemble. The distance-dependent character of the interaction causes both a momentum displacement of the collective excitations and unwanted entanglement between them. We show that these effects can be overcome by swapping the collective excitations in space and by optimizing the geometry, resulting in a photon-photon gate with high fidelity and efficiency.

  20. Surface mobility near threshold and other parameters of insulated gate field effect transistors

    E-Print Network [OSTI]

    Gnadinger, Alfred P.

    1970-01-01T23:59:59.000Z

    SURFACE MOBILITY NEAR THRESHOLD AND OTHER PARAMETERS OF INSULATED GATE FIELD EFFECT TRANSISTORS BY Alfred P. Gnadinger Dipl. El. Ing. ETH Swiss Federal Institute of Technology, Zurich, 1965 M.S.E.E, University of Kansas, Lawrence, 1968... Committee: May, 1970 RD0107 4S0S0 TO MY WIFE AND OUR PARENTS i ABSTRACT The mobility of the mobile carriers in the inversion layer of an Insulated Gate Field Effect Transistor (IGFET) has been investigated with particular...

  1. Rooted-tree network for optimal non-local gate implementation

    E-Print Network [OSTI]

    Nilesh Vyas; Debashis Saha; Prasanta K. Panigrahi

    2015-06-28T23:59:59.000Z

    A general quantum network for implementing non-local control-unitary gates, between remote parties at minimal entanglement cost, is shown to be a rooted-tree structure. Starting from a five party scenario, we demonstrate the local implementation of simultaneous control-Hermitian and multiparty control-unitary gates in an arbitrary n-party network. Previously established networks are shown to be special cases of this general construct.

  2. Fault-tolerant logical gates in quantum error-correcting codes

    E-Print Network [OSTI]

    Fernando Pastawski; Beni Yoshida

    2014-08-07T23:59:59.000Z

    Recently, Bravyi and K\\"onig have shown that there is a tradeoff between fault-tolerantly implementable logical gates and geometric locality of stabilizer codes. They consider locality-preserving operations which are implemented by a constant depth geometrically local circuit and are thus fault-tolerant by construction. In particular, they shown that, for local stabilizer codes in D spatial dimensions, locality preserving gates are restricted to a set of unitary gates known as the D-th level of the Clifford hierarchy. In this paper, we elaborate this idea and provide several extensions and applications of their characterization in various directions. First, we present a new no-go theorem for self-correcting quantum memory. Namely, we prove that a three-dimensional stabilizer Hamiltonian with a locality-preserving implementation of a non-Clifford gate cannot have a macroscopic energy barrier. Second, we prove that the code distance of a D-dimensional local stabilizer code with non-trivial locality-preserving m-th level Clifford logical gate is upper bounded by $O(L^{D+1-m})$. For codes with non-Clifford gates (m>2), this improves the previous best bound by Bravyi and Terhal. Third we prove that a qubit loss threshold of codes with non-trivial transversal m-th level Clifford logical gate is upper bounded by 1/m. As such, no family of fault-tolerant codes with transversal gates in increasing level of the Clifford hierarchy may exist. This result applies to arbitrary stabilizer and subsystem codes, and is not restricted to geometrically-local codes. Fourth we extend the result of Bravyi and K\\"onig to subsystem codes. A technical difficulty is that, unlike stabilizer codes, the so-called union lemma does not apply to subsystem codes. This problem is avoided by assuming the presence of error threshold in a subsystem code, and the same conclusion as Bravyi-K\\"onig is recovered.

  3. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    None

    2011-07-31T23:59:59.000Z

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  4. Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry

    E-Print Network [OSTI]

    Colin J. Trout; Kenneth R. Brown

    2015-01-29T23:59:59.000Z

    Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

  5. Dry oxidation and fracture of LWR spent fuels

    SciTech Connect (OSTI)

    Ahn, T.M.

    1996-11-01T23:59:59.000Z

    This report evaluates the characteristics of oxidation and fracture of light-water reactor (LWR) spent fuel in dry air. It also discusses their effects on radionuclide releases in the anticipated high-level waste repository environment. A sphere model may describe diffusion-limited formation of lower oxides, such as U{sub 4}O{sub 9}, in the oxidation of the spent fuel (SF) matrix. Detrimental higher oxides, such as U{sub 3}O{sub 8}, may not form at temperatures below a threshold temperature. The nucleation process suggests that a threshold temperature exists. The calculated results regarding fracture properties of the SF matrix agree with experimental observations. Oxidation and fracture of Zircaloy may not be significant under anticipated conditions. Under saturated or unsaturated aqueous conditions, oxidation of the SF matrix is believed to increase the releases of Pu-(239+240), Am-(241+243), C-14, Tc-99, I-129, and Cs-135. Under dry conditions, I-129 releases are likely to be small, unlike C-14, in lower oxides; Cl-36, Tc-99, I-129, and Cs-135 may be released fast in higher oxides. 79 refs.

  6. New VLSI complexity results for threshold gate comparison

    SciTech Connect (OSTI)

    Beiu, V.

    1996-12-31T23:59:59.000Z

    The paper overviews recent developments concerning optimal (from the point of view of size and depth) implementations of COMPARISON using threshold gates. We detail a class of solutions which also covers another particular solution, and spans from constant to logarithmic depths. These circuit complexity results are supplemented by fresh VLSI complexity results having applications to hardware implementations of neural networks and to VLSI-friendly learning algorithms. In order to estimate the area (A) and the delay (T), as well as the classical AT{sup 2}, we shall use the following {open_quote}cost functions{close_quote}: (i) the connectivity (i.e., sum of fan-ins) and the number-of-bits for representing the weights and thresholds are used as closer approximations of the area; while (ii) the fan-ins and the length of the wires are used for closer estimates of the delay. Such approximations allow us to compare the different solutions-which present very interesting fan-in dependent depth-size and area-delay tradeoffs - with respect to AT{sup 2}.

  7. Support shape effect in metal oxide catalysis: ceria nanoshapes supported vanadia catalysts for oxidative dehydrogenation of iso-butane

    SciTech Connect (OSTI)

    Wu, Zili [ORNL; Schwartz, Viviane [ORNL; Li, Meijun [ORNL; Rondinone, Adam Justin [ORNL; Overbury, Steven {Steve} H [ORNL

    2012-01-01T23:59:59.000Z

    The activation energy of VOx/CeO2 catalysts in oxidative dehydrogenation of iso-butane was found dependent on the shape of ceria support: rods < octahedra, closely related to the surface oxygen vacancy formation energy and defects amount of the two ceria supports with different crystallographic surface planes.

  8. Methylarsenate sorption to aluminum oxide Masayuki Shimizu, mshimizu@udel.edu, Matthew Ginder-Vogel, mattgv@udel.edu, Sanjai J. Parikh, sjparikh@udel.edu, and Donald

    E-Print Network [OSTI]

    Sparks, Donald L.

    Methylarsenate sorption to aluminum oxide GEOC 44 Masayuki Shimizu, mshimizu@udel.edu, Matthew of methylarsenate species in the environment, MMA and DMA sorption behaviors to aluminum oxide are being to examine sorption complex formation between methylarsenate and aluminum oxide. Biogeochemical Redox

  9. Selective methane oxidation over promoted oxide catalysts. Quarterly report, March--May 1995

    SciTech Connect (OSTI)

    Klier, K.; Herman, R.G.; Wang, Chaun-Bao; Shi, Chunlei; Sun, Qun

    1995-08-01T23:59:59.000Z

    The objective of this research is the selective oxidative coupling of methane to C{sub 2}H{sub 4} hydrocarbons and oxygenates, in particular formaldehyde and methanol. Air, oxygen or carbon dioxide, rather than nitrous oxide will be utilized as the oxidizing gas at high gas hourly space velocity, but mild reaction conditions (500-700 {degrees}C, 1 atm total pressure). All the investigated processes are catalytic, aiming at minimizing gas phase reactions that are difficult to control. The research is divided into the following three tasks: (1) maximizing selective methane oxidation to C{sub 2}H{sub 4} products over promoted Sr/La{sub 2}O{sub 3}; (2) selective methane oxidation to oxygenates; and (3) catalyst characterization and optimization. Task 1 dealt with the preparation, testing, and optimization of acidic promoted lanthana-based catalysts for the synthesis of C{sub 2}H{sub 4} hydrocarbons and is essentially completed. Task 2 aims at the formation and optimization of promoted catalysts for the synthesis of oxygenates, in particular formaldehyde and methanol. Task 3 involves characterization of the most promising catalysts so that optimization can be achieved under Task 2. Accomplishments for this period are presented.

  10. Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

    SciTech Connect (OSTI)

    Tuokedaerhan, K.; Natori, K.; Iwai, H. [Frontier Research Center, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Kakushima, K., E-mail: kakushima@ep.titech.ac.jp; Kataoka, Y.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K. [Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502 (Japan)

    2014-01-13T23:59:59.000Z

    Interface properties of La-silicate gate dielectrics on Si substrates with W or nano-sized grain W{sub 2}C gate electrodes have been investigated. A low interface state density of 2.5?×?10{sup 11}?cm{sup ?2}/eV has been achieved with W{sub 2}C gate electrodes, which is one third of those with W gate electrode. An interface roughness of 0.33?nm with spatial frequency comparable to the grain size of W gate electrode has been observed. Besides, an atomically flat interface of 0.12?nm has been obtained with W{sub 2}C gate electrode. The origin of flat interface may be attributed to the elimination of inhomogeneous stress by grains in metal electrode.

  11. Nanocrystalline Complex Oxides Prepared by Mechanochemical Reactions

    SciTech Connect (OSTI)

    Sepelak, V. [Institute of Nanotechnology, Karlsruhe Institute of Technology, Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); On leave from the Slovak Academy of Sciences, Watsonova 45, 04353 Kosice (Slovakia); Bergmann, I. [VOLKSWAGEN AG, 38436 Wolfsburg (Germany); Indris, S. [Institute of Nanotechnology, Karlsruhe Institute of Technology, Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Subrt, J. [Institute of Inorganic Chemistry, Academy of Sciences of Czech Republic, 25068 Rez (Czech Republic); Heitjans, P. [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstrasse 3-3A, 30167 Hannover (Germany); Becker, K.-D. [Institute of Physical and Theoretical Chemistry, Braunschweig University of Technology, Hans-Sommer-Strasse 10, 38106 Braunschweig (Germany)

    2010-07-13T23:59:59.000Z

    The preparation of complex oxides by the conventional solid-state (ceramic) route requires a number of stages, including homogenization of the powder precursors, compaction of the reactants, and finally prolonged heat treatment at considerably elevated temperatures under controlled oxygen fugacity. One goal of modern materials research and development has been to identify simpler processing schemes that do not rely upon high-temperature treatments for inducing solid-state reactions. At present, mechanochemical methods become widely used for the preparation of nanocrystalline materials due to their relative simplicity and availability. In this work, selected examples of the preparation of nanoscale complex oxides via single-step mechanochemical routes are presented. Nuclear spectroscopic methods are employed to follow the mechanically induced formation of nanooxides and to characterize the nonequilibrium structural state of the resulting nanophases at the atomic level.

  12. Oxidative Tritium Decontamination System

    DOE Patents [OSTI]

    Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

    2006-02-07T23:59:59.000Z

    The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

  13. Controlled CO preferential oxidation

    DOE Patents [OSTI]

    Meltser, M.A.; Hoch, M.M.

    1997-06-10T23:59:59.000Z

    Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

  14. Exact solutions for a universal set of quantum gates on a family of iso-spectral spin chains

    E-Print Network [OSTI]

    V. Karimipour; N. Majd

    2005-09-25T23:59:59.000Z

    We find exact solutions for a universal set of quantum gates on a scalable candidate for quantum computers, namely an array of two level systems. The gates are constructed by a combination of dynamical and geometrical (non-Abelian) phases. Previously these gates have been constructed mostly on non-scalable systems and by numerical searches among the loops in the manifold of control parameters of the Hamiltonian.

  15. Fabrication of a graphene-cuprous oxide composite

    SciTech Connect (OSTI)

    Xu Chao [Key Laboratory for Soft Chemistry and Functional Materials of Ministry Education, Nanjing University of Science and Technology, Nanjing 210094 (China); Wang Xin, E-mail: wxin@public1.ptt.js.c [Key Laboratory for Soft Chemistry and Functional Materials of Ministry Education, Nanjing University of Science and Technology, Nanjing 210094 (China); Yang Lichun; Wu Yuping [Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)

    2009-09-15T23:59:59.000Z

    A composite of graphene-cuprous oxide (Cu{sub 2}O) was prepared using copper acetate-adsorbed graphene oxide (GO) sheets as precursors. In this composite, in-situ formed Cu{sub 2}O particles were derived from the adsorbed copper acetate which attached to graphene sheets and prevented the aggregation of the reduced graphene oxide sheets. The as-synthesized Cu{sub 2}O crystals were cube-like particles distributed randomly on the sheets due to the template effect of GO, consequently forming a graphene-Cu{sub 2}O cubes composite. A preliminary study on the electrochemical behavior of the graphene-Cu{sub 2}O composite used as anode material for lithium ion batteries was carried out. - Abstract: The graphene oxide sheets are reduced and almost exfoliated due to the in-situ formation of Cu{sub 2}O crystals deriving from the adsorbed copper acetate. Display Omitted

  16. ADVANCED OXIDATION PROCESS

    SciTech Connect (OSTI)

    Dr. Colin P. Horwitz; Dr. Terrence J. Collins

    2003-11-04T23:59:59.000Z

    The removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from automotive fuels is an integral component in the development of cleaner burning and more efficient automobile engines. Oxidative desulfurization (ODS) wherein the dibenzothiophene derivative is converted to its corresponding sulfoxide and sulfone is an attractive approach to sulfur removal because the oxidized species are easily extracted or precipitated and filtered from the hydrocarbon phase. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) catalytically convert dibenzothiophene and its derivatives rapidly and effectively at moderate temperatures (50-60 C) and ambient pressure to the corresponding sulfoxides and sulfones. The oxidation process can be performed in both aqueous systems containing alcohols such as methanol, ethanol, or t-butanol, and in a two-phase hydrocarbon/aqueous system containing tert-butanol or acetonitrile. In the biphasic system, essentially complete conversion of the DBT to its oxidized products can be achieved using slightly longer reaction times than in homogeneous solution. Among the key features of the technology are the mild reaction conditions, the very high selectivity where no over oxidation of the sulfur compounds occurs, the near stoichiometric use of hydrogen peroxide, the apparent lack of degradation of sensitive fuel components, and the ease of separation of oxidized products.

  17. Birnessite formation and its transformation in acid media Xiong Han Feng, fxh73@mail.hzau.edu.cn, Matthew Ginder-Vogel, mattgv@udel.edu, Mengqiang Zhu, mzhu@UDel.Edu, and Donald

    E-Print Network [OSTI]

    Sparks, Donald L.

    Birnessite formation and its transformation in acid media GEOC 47 Xiong Han Feng, fxh73@mail hexagonal structure to biogenic manganese oxide. The formation of acid birnessite and its transformation

  18. Realization and Properties of Biochemical-Computing Biocatalytic XOR Gate Based on Enzyme Inhibition by a Substrate

    E-Print Network [OSTI]

    Jan Halamek; Vera Bocharova; Mary A. Arugula; Guinevere Strack; Vladimir Privman; Evgeny Katz

    2011-05-25T23:59:59.000Z

    We consider a realization of the XOR logic gate in a process biocatalyzed by an enzyme (here horseradish peroxidase: HRP), the function of which can be inhibited by a substrate (hydrogen peroxide for HRP), when the latter is inputted at large enough concentrations. A model is developed for describing such systems in an approach suitable for evaluation of the analog noise amplification properties of the gate. The obtained data are fitted for gate quality evaluation within the developed model, and we discuss aspects of devising XOR gates for functioning in "biocomputing" systems utilizing biomolecules for information processing.

  19. Photoluminescence study in diaminobenzene functionalized graphene oxide

    SciTech Connect (OSTI)

    Gupta, Abhisek, E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2014-10-15T23:59:59.000Z

    Being an excellent electronic material graphene is a very poor candidate for optoelectronic applications. One of the major strategies to develop the optical property in GO is the functionalization of graphene oxide (GO). In the present work GO sheets are functionalized by o-phenylenediamine to achieve diaminobenzene functionalized GO composite (DAB-GO). Formation of DAB-GO composite is further characterized by FTIR, UV, Raman studies. Excellent photoluminescence is observed in DAB-GO composite via passivation of the surface reactive sites by ring-opening amination of epoxides of GO.

  20. In situ atomic force microscopy imaging of electroprecipitated nickel hydrous oxide films in alkaline electrolytes

    SciTech Connect (OSTI)

    Chen, R.; Mo, Y.; Scherson, D.A. (Case Western Reserve Univ., Cleveland, OH (United States))

    1994-11-01T23:59:59.000Z

    In situ atomic force microscopy images of nickel hydrous oxide films electrodeposited on the basal plane of highly oriented pyrolytic graphite in alkaline electrolytes have shown that a stepwise oxidation leads to irreversible formation of wide crevices throughout the material. Upon subsequent stepwise reduction, the gaps close leaving a hairline type crack which follows the profile of the crevice. These potential induced structural rearrangements have been attributed to stresses induced by differences in the densities of the nickel hydrous oxide in the two oxidation states. 9 refs., 5 figs.

  1. Compact, Intelligent, Digitally Controlled IGBT Gate Drivers for a PEBB-Based ILC Marx Modulator

    SciTech Connect (OSTI)

    Nguyen, M.N.; Burkhart, C.; Olsen, J.J.; Macken, K.; /SLAC; ,

    2010-06-07T23:59:59.000Z

    SLAC National Accelerator Laboratory has built and is currently operating a first generation prototype Marx klystron modulator to meet ILC specifications. Under development is a second generation prototype, aimed at improving overall performance, serviceability, and manufacturability as compared to its predecessor. It is designed around 32 cells, each operating at 3.75 kV and correcting for its own capacitor droop. Due to the uniqueness of this application, high voltage gate drivers needed to be developed for the main 6.5 kV and droop correction 1.7 kV IGBTs. The gate driver provides vital functions such as protection of the IGBT from over-voltage and over-current, detection of gate-emitter open and short circuit conditions, and monitoring of IGBT degradation (based on collector-emitter saturation voltage). Gate drive control, diagnostic processing capabilities, and communication are digitally implemented using an FPGA. This paper details the design of the gate driver circuitry, component selection, and construction layout. In addition, experimental results are included to illustrate the effectiveness of the protection circuit.

  2. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31T23:59:59.000Z

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davisâ??s existing GATE centers have become the campusâ??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  3. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M. (Brookline, MA)

    1991-01-01T23:59:59.000Z

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  4. (Non) formation of methanol by direct hydrogenation of formate on copper catalysts

    SciTech Connect (OSTI)

    Yang, Yong; Mims, Charles A.; Disselkamp, Robert S.; Kwak, Ja Hun; Peden, Charles HF; Campbell, C. T.

    2010-10-14T23:59:59.000Z

    We have attempted to hydrogenate adsorbed formate species on copper catalysts to probe the importance of this postulated mechanistic step in methanol synthesis. Surface formate coverages up to 0.25 were produced at temperatures between 413K and 453K on supported (Cu/SiO2) copper and unsupported copper catalysts. The adlayers were produced by various methods including (1) steady state catalytic conditions in CO2-H2 (3:1, 6 bar) atmospheres, and (2) by exposure of the catalysts to formic acid. As reported in earlier work, the catalytic surface at steady state contains bidentate formate species with coverages up to saturation levels of ~ 0.25 at the low temperatures of this study. The reactivity of these formate adlayers was investigated at relevant reaction temperatures in atmospheres containing up to 6 bar H2 partial pressure by simultaneous mass spectrometry (MS) and infrared (IR) spectroscopy measurements. The yield of methanol during the attempted hydrogenation (“titration”) of these adlayers was insignificant (<0.2 mol % of the formate adlayer) even in dry hydrogen partial pressures up to 6 bar. Hydrogen titration of formate species produced from formic acid also failed to produce significant quantities of methanol, and attempted titration in gases consisting of CO-hydrogen mixtures or dry CO2 were also unproductive. The formate decomposition kinetics, measured by IR, were also unaffected by these changes in the gas composition. Similar experiments on unsupported copper also failed to show any methanol. From these results, we conclude that methanol synthesis on copper cannot result from the direct hydrogenation of (bidentate) formate species in simple steps involving adsorbed H species alone. Furthermore, experiments performed on both supported (Cu/SiO2) and unsupported copper catalysts gave similar results implying that the methanol synthesis reaction mechanism only involves metal surface chemistry. Pre-exposure of the bidentate formate adlayer to oxidation by O2 or N2O produces a change to a monodentate configuration. Attempted titration of this monodentate formate/O coadsorbed layer in dry hydrogen produces significant quantities of methanol, although decomposition of formate to carbon dioxide and hydrogen remains the dominant reaction pathway. Simultaneous production of water is also observed during this titration as the copper surface is re-reduced. These results indicate that co-adsorbates related to surface oxygen or water-derived species may be critical to methanol production on copper, perhaps assisting in the hydrogenation of adsorbed formate to adsorbed methoxyl.

  5. Oxidation of propylene over copper oxide catalysts 

    E-Print Network [OSTI]

    Billingsley, David Stuart

    1958-01-01T23:59:59.000Z

    sulfate of either sodium, potassium, lithium, rubidium or cesium. The active agent was prepared in the form of a slurry which was deposited on the carrier by agitating the two materials together. The carrier was alumina or silicon carbide. Oxidation... welded on each end. On the bottom of the tank was a drain connection which was closed; the tank also contained a thermometer well. The tank was connected to the vent system through a needle valve and also through a safety valve which was set...

  6. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D. (Golden, CO)

    1998-04-14T23:59:59.000Z

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  7. Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels

    E-Print Network [OSTI]

    Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

    2009-02-16T23:59:59.000Z

    The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

  8. Enhanced mercury oxidation

    SciTech Connect (OSTI)

    Gretta, W.J.; Wu, S.; Kikkawa, H. [Hitachi Power Systems America, Basting Ridge, NJ (United States)

    2009-06-15T23:59:59.000Z

    A new catalyst offers a new way to enhance mercury control from bituminous coal-fired power plants. Hitachi has developed an SCR catalyst which satisfies high Hg{sup 0} oxidation and low SO{sub 2} oxidation requirements under high temperatures (716 to 770 F). This triple action catalysts, TRAC can significantly enhance mercury oxidation and reduce or eliminate the need for additional mercury control measures such as activated carbon injection. After laboratory testing, pilot-scale tests confirmed an activity of 1.4-1.7 times higher than that of conventional SCR catalyst. The new catalyst has been successfully applied in a commercial PRB-fired boiler without the need for halogens to be added to the fuel feed or flue gas. 2 figs.

  9. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    1999-01-01T23:59:59.000Z

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  10. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    2001-01-01T23:59:59.000Z

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  11. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-24T23:59:59.000Z

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  12. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-17T23:59:59.000Z

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  13. Low temperature oxidation of plutonium

    SciTech Connect (OSTI)

    Nelson, Art J. [Lawrence Livermore National Laboratory, Livermore, California 94551 (United States); Roussel, Paul [AWE, Aldermaston, Reading, Berkshire, RG7 4PR (United Kingdom)

    2013-05-15T23:59:59.000Z

    The initial oxidation of gallium stabilized {delta}-plutonium metal at 193 K has been followed using x-ray photoelectron spectroscopy. On exposure to Langmuir quantities of oxygen, plutonium rapidly forms a trivalent oxide followed by a tetravalent plutonium oxide. The growth modes of both oxides have been determined. Warming the sample in vacuum, the tetravalent oxide reduces to the trivalent oxide. The kinetics of this reduction reaction have followed and the activation energy has been determined to be 38.8 kJ mol{sup -1}.

  14. Characterization of Amorphous Zinc Tin Oxide Semiconductors....

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Amorphous Zinc Tin Oxide Semiconductors. Characterization of Amorphous Zinc Tin Oxide Semiconductors. Abstract: Amorphous zinc tin oxide (ZTO) was investigated to determine the...

  15. Tetraalklylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

    1998-10-06T23:59:59.000Z

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  16. Tetraalykylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

    1998-01-01T23:59:59.000Z

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z ›(n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  17. Engineering a C-Phase quantum gate: optical design and experimental realization

    E-Print Network [OSTI]

    Andrea Chiuri; Chiara Greganti; Paolo Mataloni

    2012-04-12T23:59:59.000Z

    A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

  18. Noise-Protected Gate for Six-Electron Double-Dot Qubits

    E-Print Network [OSTI]

    Sebastian Mehl; David P. DiVincenzo

    2014-08-05T23:59:59.000Z

    Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum dots: singlet and triplet states in this shell have identical charge distributions. Our phase-gate simulations, which include $1/f$ charge noise from fluctuating traps, show that this symmetry is most effectively exploited if the gate operation switches rapidly between sweet spots deep in the (3,3) and (4,2) charge stability regions; fidelities very close to one are predicted if subnanosecond switching can be performed.

  19. Fabrication and testing of oxidized porous silicon field emitter strips 

    E-Print Network [OSTI]

    Madduri, Vasanta Bhanu

    1992-01-01T23:59:59.000Z

    Fig. 1 Cross-section of Thin-film Field Emission Structure (After Spindt, et al. [7] ). Mo Silicon dioxide Silicon substrate Axis of rotation ~' Evaporant Aluminum release layer Mo SiO Si Evaporant Deposition for cone formation Etch off... release layer Fig. 2 Fabrication Procedure to Produce Mo Cones silicon substrates with 1-1, 5 pm of thermally grown oxide on them. Holes of 1. 5-2 ltm diameter are micro-machined in the oxide layer using electron beam lithography. Mo serves as an etch...

  20. Grating-gate tunable plasmon absorption in InP and GaN based R. E. Peale*a

    E-Print Network [OSTI]

    Peale, Robert E.

    Grating-gate tunable plasmon absorption in InP and GaN based HEMTs R. E. Peale*a , H. Saxenaa , W, Inc., 1195 Atlas Road, Columbia SC, USA 29209 ABSTRACT Gate-voltage tunable plasmon resonances incident THz radiation into 2D plasmons. Narrow-band resonant absorption of THz radiation was observed

  1. A Technique for Low Power Dynamic Circuit Design in 32nm Double-Gate FinFET Technology

    E-Print Network [OSTI]

    Ayers, Joseph

    the leakage current (this is accomplished by connecting the back gate to the clock signal of the dynamic. By taking advantage of the independent double gate FinFET, Vth is controlled dynamically by biasing the back and drain of a device are connected to those of the other device. Drain Source Figure 1. FinFET structure

  2. Electrophoretic-like Gating Used To Control Metal-Insulator Transitions in Electronically Phase Separated Manganite Wires

    E-Print Network [OSTI]

    Tennessee, University of

    traditional carrier doping and by inducing electroresistive phase transitions in the material. In the case, and an electric field applied to the gate acts to change the material's access to electrons. This switchingElectrophoretic-like Gating Used To Control Metal-Insulator Transitions in Electronically Phase

  3. Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks

    E-Print Network [OSTI]

    Misra, Durgamadhab "Durga"

    Trapping in deep defects under substrate hot electron stress in TiN/Hf-silicate based gate stacks N. Zaslavsky Abstract Substrate hot electron stress was applied on n+ -ringed n-channel MOS capacitors with TiN/Hf-silicate. Introduction Hafnium silicate based high-j gate dielectrics have been put forth as the leading candidates

  4. An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chuiping; Chu, Shih-I; Han, Siyuan

    2004-03-31T23:59:59.000Z

    A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states ...

  5. Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2003-04-17T23:59:59.000Z

    We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also ...

  6. Solubility Behavior and Phase Stability of Transition Metal Oxides in Alkaline Hydrothermal Environments

    SciTech Connect (OSTI)

    S.E. Ziemniak

    2000-05-18T23:59:59.000Z

    The solubility behavior of transition metal oxides in high temperature water is interpreted by recognizing three types of chemical reaction equilibria: metal oxide hydration/dehydration, metal oxide dissolution and metal ion hydroxocomplex formation. The equilibria are quantified using thermodynamic concepts and the thermochemical properties of the metal oxides/ions representative of the most common constituents of construction metal alloys, i.e., element shaving atomic numbers between Z = 22 (Ti) and Z = 30 (Zn), are summarized on the basis of metal oxide solubility studies conducted in the laboratory. Particular attention is devoted to the uncharged metal ion hydrocomplex, M{sup Z}(OH){sub Z}(aq), since its thermochemical properties define minimum solubilities of the metal oxide at a given temperature. Experimentally-extracted values of standard partial molal entropy (S{sup 0}) for the transition metal ion neutral hydroxocomplex are shown to be influenced by ligand field stabilization energies and complex symmetry.

  7. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOE Patents [OSTI]

    Frei, Heinz M; Jiao, Feng

    2013-12-24T23:59:59.000Z

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  8. SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL

    E-Print Network [OSTI]

    Mease, Kenneth D.

    SOLID OXIDE PLANAR AND TUBULAR SOLID OXIDE FUEL CELLS Dynamic Simulation Approach Modular Approach: Individual simulation modules for each fuel cell type · Tubular SOFC · Planar SOFC · MCFC · PEM Reformer · Slow pressure transients #12;Fuel Cell Assumptions · H2 electrochemically oxidized only · CO consumed

  9. Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide

    E-Print Network [OSTI]

    Collins, Gary S.

    Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide Jessica Whalen, Oscar Marin Flores, Su University INTRODUCTION Energy consumption continues to skyrocket worldwide. Biodiesel is a renewable fuel as potential feedstock in solid oxide fuel cells. Petroleum based fuels become scarcer daily, and biodiesel

  10. IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation-Doped

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 549 Dual-Gate AlGaN/GaN Modulation--We demonstrate dual-gate AlGaN/GaN modula- tion-doped field-effect transistors (MODFETs) with gate-lengths of 0 power amplifiers. Index Terms--AlGaN/GaN, broadband power amplifiers, dual-gate FETs. I. INTRODUCTION

  11. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2013-04-16T23:59:59.000Z

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  12. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2012-09-11T23:59:59.000Z

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  13. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2014-05-20T23:59:59.000Z

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  14. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14T23:59:59.000Z

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  15. Highly oxidized superconductors

    DOE Patents [OSTI]

    Morris, Donald E. (Kensington, CA)

    1994-01-01T23:59:59.000Z

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

  16. Highly oxidized superconductors

    DOE Patents [OSTI]

    Morris, D.E.

    1994-09-20T23:59:59.000Z

    Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

  17. Optically transparent yttrium oxide

    SciTech Connect (OSTI)

    Hartnett, T.; Greenberg, M.; Gentilman, R.L.

    1988-08-02T23:59:59.000Z

    A body is described comprising at least 99.9% yttrium oxide having a density of at least 99% of theoretically density, a sample of the body having a in-line transmission of at least 73%, over a wavelength range of 2-5 microns with the sample having a thickness of 0.375 inches.

  18. Oxidation Behavior and Chlorination Treatment to Improve Oxidation Resistance of Nb-Mo-Si-B Alloys

    SciTech Connect (OSTI)

    Vikas Behrani

    2004-12-19T23:59:59.000Z

    This thesis is written in an alternate format. The thesis is composed of a general introduction, two original manuscripts, and a general conclusion. References cited within each chapter are given at the end of each chapter. The general introduction starts with the driving force behind this research, and gives an overview of previous work on boron doped molybdenum silicides, Nb/Nb{sub 5}Si{sub 3} composites, boron modified niobium silicides and molybdenum niobium silicides. Chapter 2 focuses on the oxidation behavior of Nb-Mo-Si-B alloys. Chapter 3 contains studies on a novel chlorination technique to improve the oxidation resistance of Nb-Mo-Si-B alloys. Chapter 4 summarizes the important results in this study.

  19. REVIEW OF PLUTONIUM OXIDATION LITERATURE

    SciTech Connect (OSTI)

    Korinko, P.

    2009-11-12T23:59:59.000Z

    A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

  20. Observing Massive Galaxy Formation

    E-Print Network [OSTI]

    Christopher J. Conselice

    2002-12-20T23:59:59.000Z

    A major goal of contemporary astrophysics is understanding the origin of the most massive galaxies in the universe, particularly nearby ellipticals and spirals. Theoretical models of galaxy formation have existed for many decades, although low and high redshift observations are only beginning to put constraints on different ideas. We briefly describe these observations and how they are revealing the methods by which galaxies form by contrasting and comparing fiducial rapid collapse and hierarchical formation model predictions. The available data show that cluster ellipticals must have rapidly formed at z > 2, and that up to 50% of all massive galaxies at z ~ 2.5 are involved in major mergers. While the former is consistent with the monolithic collapse picture, we argue that hierarchal formation is the only model that can reproduce all the available observations.

  1. Power gating is usually driven by a predictive control, and frequent mispredictions can counter-productively lead to a large increase in

    E-Print Network [OSTI]

    Sorin, Daniel J.

    frames it can consume 70% more energy than a system without power gating. When adding a feature of the most promising mechanisms for reducing leakage energy is power gating, whereby leakage energy is saved is power gated off, some energy is needed for turning the component off and then on again. If the power

  2. Doped palladium containing oxidation catalysts

    DOE Patents [OSTI]

    Mohajeri, Nahid

    2014-02-18T23:59:59.000Z

    A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

  3. Isolating Triggered Star Formation

    SciTech Connect (OSTI)

    Barton, Elizabeth J.; Arnold, Jacob A.; /UC, Irvine; Zentner, Andrew R.; /KICP, Chicago /Chicago U., EFI; Bullock, James S.; /UC, Irvine; Wechsler, Risa H.; /KIPAC, Menlo

    2007-09-12T23:59:59.000Z

    Galaxy pairs provide a potentially powerful means of studying triggered star formation from galaxy interactions. We use a large cosmological N-body simulation coupled with a well-tested semi-analytic substructure model to demonstrate that the majority of galaxies in close pairs reside within cluster or group-size halos and therefore represent a biased population, poorly suited for direct comparison to 'field' galaxies. Thus, the frequent observation that some types of galaxies in pairs have redder colors than 'field' galaxies is primarily a selection effect. We use our simulations to devise a means to select galaxy pairs that are isolated in their dark matter halos with respect to other massive subhalos (N= 2 halos) and to select a control sample of isolated galaxies (N= 1 halos) for comparison. We then apply these selection criteria to a volume-limited subset of the 2dF Galaxy Redshift Survey with M{sub B,j} {le} -19 and obtain the first clean measure of the typical fraction of galaxies affected by triggered star formation and the average elevation in the star formation rate. We find that 24% (30.5 %) of these L* and sub-L* galaxies in isolated 50 (30) h{sup -1} kpc pairs exhibit star formation that is boosted by a factor of {approx}> 5 above their average past value, while only 10% of isolated galaxies in the control sample show this level of enhancement. Thus, 14% (20 %) of the galaxies in these close pairs show clear triggered star formation. Our orbit models suggest that 12% (16%) of 50 (30) h{sup -1} kpc close pairs that are isolated according to our definition have had a close ({le} 30 h{sup -1} kpc) pass within the last Gyr. Thus, the data are broadly consistent with a scenario in which most or all close passes of isolated pairs result in triggered star formation. The isolation criteria we develop provide a means to constrain star formation and feedback prescriptions in hydrodynamic simulations and a very general method of understanding the importance of triggered star formation in a cosmological context.

  4. JPEG File Interchange Format

    E-Print Network [OSTI]

    Hamilton, Eric

    2004-03-30T23:59:59.000Z

    interchange format compressed image representation • PC or Mac or Unix workstation compatible • Standard color space: one or three components. For three components, YCbCr (CCIR 601-256 levels) • APP0 marker used to specify Units, X pixel density, Y pixel... by the Macintosh but not by PCs or workstations. JPEG File Interchange Format, Version 1.02 2 Standard color space The color space to be used is YCbCr as defined by CCIR 601 (256 levels). The RGB components calculated by linear conversion from YCbCr shall...

  5. Model catalytic oxidation studies using supported monometallic and heterobimetallic oxides

    SciTech Connect (OSTI)

    Ekerdt, J.G.

    1992-02-03T23:59:59.000Z

    This research program is directed toward a more fundamental understanding of the effects of catalyst composition and structure on the catalytic properties of metal oxides. Metal oxide catalysts play an important role in many reactions bearing on the chemical aspects of energy processes. Metal oxides are the catalysts for water-gas shift reactions, methanol and higher alcohol synthesis, isosynthesis, selective catalytic reduction of nitric oxides, and oxidation of hydrocarbons. A key limitation to developing insight into how oxides function in catalytic reactions is in not having precise information of the surface composition under reaction conditions. To address this problem we have prepared oxide systems that can be used to study cation-cation effects and the role of bridging (-O-) and/or terminal (=O) surface oxygen anion ligands in a systematic fashion. Since many oxide catalyst systems involve mixtures of oxides, we selected a model system that would permit us to examine the role of each cation separately and in pairwise combinations. Organometallic molybdenum and tungsten complexes were proposed for use, to prepare model systems consisting of isolated monomeric cations, isolated monometallic dimers and isolated bimetallic dimers supported on silica and alumina. The monometallic and bimetallic dimers were to be used as models of more complex mixed- oxide catalysts. Our current program was to develop the systems and use them in model oxidation reactions.

  6. The formation of PdCx over Pd-based catalysts in vapor-phase vinyl acetate synthesis: does a PdAu alloy catalyst resist carbide formation?

    E-Print Network [OSTI]

    Goodman, Wayne

    a Pd­Au/SiO2 mixed-metal catalyst. XRD data show that PdCx was produced in the pure Pd catalysts after greater resistance to the formation of PdCx. The XRD and XPS data are consistent with formation of a Pd in a micro-reactor using online GC; before reaction the catalysts were pretreated (oxidized in a 20 m

  7. Graphene and Graphene Oxide: Biofunctionalization and Applications...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Graphene and Graphene Oxide: Biofunctionalization and Applications in Biotechnology. Abstract: Graphene...

  8. Are global trade negotiations behind a fragmented world of "gated globalization"?

    E-Print Network [OSTI]

    Bandyopadhyay, Antar

    Are global trade negotiations behind a fragmented world of "gated globalization"? James Lake In a very simple three country model where global trade negotiations precede a sequential Free Trade. Even though sequential FTA for- mation may lead to global free trade if governments have not previously

  9. Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

  10. Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints

    E-Print Network [OSTI]

    Kolodny, Avinoam

    Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

  11. Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal employs power transmission lines (PTL) that supply power to integrated circuits instead of using is able to reduce SSN and enhance power and signal integrity. Pseudo-balanced power transmission line (PB

  12. Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent regime

    E-Print Network [OSTI]

    Recanati, Catherine

    Gate-modulated thermoelectric conversion in disordered nanowires: I. Low temperature coherent as promising thermoelectric devices1 . In comparison to their bulk counterparts, they provide opportunities of thermoelectric conversion at a given temperature T . Indeed, they allow to reduce the phonon contribution ph

  13. Phase transitions in Dual-Gated Bilayer Graphene Gregory S. Boebinger, National High Magnetic Field Laboratory

    E-Print Network [OSTI]

    Weston, Ken

    Phase transitions in Dual-Gated Bilayer Graphene Gregory S. Boebinger, National High Magnetic Field Laboratory DMR-Award 0654118 DC Field Facility Bilayer graphene, consisting of two layers of carbon atoms of the degeneracy of the electronic states in the graphene bilayer. Resistivity plotted as a function of the front

  14. Neural mechanisms of saccade target selection: gated accumulator model of the visualmotor cascade

    E-Print Network [OSTI]

    Schall, Jeffrey D.

    Neural mechanisms of saccade target selection: gated accumulator model of the visual­motor cascade, Vanderbilt University, PMB 407817, 2301 Vanderbilt Place, Nashville, TN 37240-7817, USA Keywords: accumulator neurons in the frontal eye field as evidence for stimulus salience that is accumulated in a network

  15. ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title

    E-Print Network [OSTI]

    1 Title: ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title: ERK2 signal-regulated kinase (ERK) plays an important role in the underlying molecular mechanisms. ERK. Blockade of ERK activation prevents long- lasting behavioral changes, including psychomotor sensitization

  16. Accuracy of gates in a quantum computer based on vibrational eigenstates Dmitri Babikov

    E-Print Network [OSTI]

    Reid, Scott A.

    of quantum gates in such a system. Optimal control theory and numerical time-propagation of vibrational wave the computational sciences:2 ``Quantum computing would be to ordinary com- puting what nuclear energy is to fire'' consisting of two states 0 and 1 that have been harnessed for running quantum computing algorithms, setting

  17. Na K -pump ligands modulate gating of palytoxin-induced ion channels

    E-Print Network [OSTI]

    Gadsby, David

    Na K -pump ligands modulate gating of palytoxin-induced ion channels Pablo Artigas and David C (received for review September 26, 2002) The Na K pump is a ubiquitous P-type ATPase that binds three -ion occlusion to phosphorylation of the pump by ATP and of K -ion occlusion to its dephosphorylation

  18. Spin transistor operation driven by the Rashba spin-orbit coupling in the gated nanowire

    SciTech Connect (OSTI)

    Wójcik, P.; Adamowski, J., E-mail: adamowski@fis.agh.edu.pl; Spisak, B. J.; Wo?oszyn, M. [Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. Mickiewicza 30, Kraków (Poland)

    2014-03-14T23:59:59.000Z

    A theoretical description has been proposed for the operation of the spin transistor in the gate-controlled InAs nanowire. The calculated current-voltage characteristics show that the electron current flowing from the source (spin injector) to the drain (spin detector) oscillates as a function of the gate voltage, which results from the precession of the electron spin caused by the Rashba spin-orbit interaction in the vicinity of the gate. We have studied the operation of the spin transistor under the following conditions: (A) the full spin polarization of electrons in the contacts, zero temperature, and the single conduction channel corresponding to the lowest-energy subband of the transverse motion and (B) the partial spin polarization of the electrons in the contacts, the room temperature, and the conduction via many transverse subbands taken into account. For case (A), the spin-polarized current can be switched on/off by the suitable tuning of the gate voltage, for case (B) the current also exhibits the pronounced oscillations but with no-zero minimal values. The computational results obtained for case (B) have been compared with the recent experimental data and a good agreement has been found.

  19. Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors

    E-Print Network [OSTI]

    Dekker, Cees

    Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

  20. REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS

    E-Print Network [OSTI]

    Sheikholeslami, Ali

    REAL-TIME DUAL-MICROPHONE SPEECH ENHANCEMENT USING FIELD PROGRAMMABLE GATE ARRAYS David Halupka@eecg}.toronto.edu ABSTRACT This paper discusses an implementation of a dual- microphone phase-based speech enhancement or irrelevant conversations, are present has fueled research interest in the areas of speech enhancement

  1. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

    1996-01-01T23:59:59.000Z

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  2. Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Elsevier Science 1 Use of the GATE Monte Carlo package for dosimetry applications D. Visvikis, a* M Angeles, USA Abstract One of the roles for MC simulation studies is in the area of dosimetry. A number of different codes dedicated to dosimetry applications are available and widely used today, such as MCNP

  3. Validation of GATE 6.1 for targeted radiotherapy of metastic melanoma I-labeled benzamide

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    1 Validation of GATE 6.1 for targeted radiotherapy of metastic melanoma using 131 I for the treatment of malignant melanoma after injection of a new specific radiopharmaceutical labeled with iodine, named ICF01012, selected to treat35 the malignant melanoma [Chezal et al 2008]. 131 I-labeled ICF01012

  4. Evidence of gating in hundred nanometer diameter pores: an experimental and theoretical study

    SciTech Connect (OSTI)

    Letant, S E; Schaldach, C M; Johnson, M R; Sawvel, A; Bourcier, W L; Wilson, W D

    2006-01-11T23:59:59.000Z

    We report on the observation of an unexpected gating mechanism at the 100 nm scale on track-etched polycarbonate membranes. Transport measurements of methyl viologen performed by absorption spectroscopy under various pH conditions demonstrated that perfect gating was achieved for 100 nm diameter pores at pH 2, while the positively charged molecular ions moved through the membrane according to diffusion laws at pH 5. An oppositely charged molecular ion, naphthalene disulfonate, in the same membrane, showed the opposite trend: diffusion of the negative ion at pH 2 and perfect gating at pH 5. The influence of parameters such as ionic strength and membrane surface coating were also investigated. A theoretical study of the system shows that at this larger length scale the magnitude of the electric field in the vicinity of the pores is too small to account for the experimental observations, rather, it is the surface trapping of the mobile ion (Cl{sup -} or Na{sup +}) which gives rise to the gating phenomena. This surprising effect might have potential applications for high-throughput separation of large molecules and bio-organisms.

  5. Membrane Tension, Lipid Adaptation, Conformational Changes, and Energetics in MscL Gating

    E-Print Network [OSTI]

    Rui, Huan; Kumar, Ritesh; Im, Wonpil

    2011-08-03T23:59:59.000Z

    -MscL) is used as a model system; Tb-MscL acts as a safety valve by releasing small osmolytes through the channel opening under extreme hypoosmotic conditions. Based on the assumption that the channel gating involves tilting of the transmembrane (TM) helices, we...

  6. Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo

    E-Print Network [OSTI]

    Bjørnstad, Ottar Nordal

    Gate Voltage Control of Oxygen Diffusion on Graphene Dr. Jorge O. Sofo Associate Professor conductivity (twice that of diamond). Due to Carbon's affinity for tetrahedral bonding, its surface is amenable atoms. Our research focuses on the attachment and diffusion of different atomic species to the surface

  7. Needle-based reflection refractometry of scattering samples using coherence-gated

    E-Print Network [OSTI]

    Boppart, Stephen

    effects of internal refractive index variation in near-infrared optical tomography: a finite element, and K. D. Paulsen, "Effects of refractive index on near- infrared tomography of the breast," Appl. OptNeedle-based reflection refractometry of scattering samples using coherence-gated detection Adam M

  8. Gate Delay Calculation Considering the Crosstalk Capacitances Soroush Abbaspour and Massoud Pedram

    E-Print Network [OSTI]

    Pedram, Massoud

    . As the victim line switches, the impedance of its driving gate changes by orders of magnitude, thereby the various R and C parasitics as well as the capacitive coupling between interconnect lines. However, since of capacitances. For example, for opposite direction switching of two identical coupled lines, switching

  9. A PVT Aware Accurate Statistical Logic Library for High-Metal-Gate Nano-CMOS

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    (T) which may be due to the environment, through self-heating effects or a combination of the two- tion which leads to high electric field and a high GIDL current [16]. (2) The high- gate dielectric and SiO2 spacers meet at the surface of the drain region, causing a high electric field leading to a high

  10. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, D.A.; Haynes, H.D.; Moyers, J.C.; Stewart, B.K.

    1996-01-30T23:59:59.000Z

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner. 8 figs.

  11. A 100V, 3 Phase Gate Driver with integrated digital PWM Generation and Current Sampling

    E-Print Network [OSTI]

    Ng, Wai Tung

    multiple market segments such as automotive, pumps, motion control and home appliances have been demanding and capabilities of this technology will also be included. Background: Smart power ICs (PICs) are increasingly-5], the smart PICs offered only limited analog sensing and gate drive functions. The protections are usually

  12. Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect

    SciTech Connect (OSTI)

    Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

    2008-09-15T23:59:59.000Z

    A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

  13. Recovery and regeneration of spent MHD seed material by the formate process

    DOE Patents [OSTI]

    Sheth, A.C.; Holt, J.K.; Rasnake, D.G.; Solomon, R.L.; Wilson, G.L.; Herrigel, H.R.

    1991-10-15T23:59:59.000Z

    The specification discloses a spent seed recovery and regeneration process for an MHD power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to suppress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate. 5 figures.

  14. Recovery and regeneration of spent MHD seed material by the formate process

    DOE Patents [OSTI]

    Sheth, Atul C. (Tullahoma, TN); Holt, Jeffrey K. (Manchester, TN); Rasnake, Darryll G. (Manchester, TN); Solomon, Robert L. (Seattle, WA); Wilson, Gregory L. (Redmond, WA); Herrigel, Howard R. (Seattle, WA)

    1991-01-01T23:59:59.000Z

    The specification discloses a spent seed recovery and regeneration process for an MHM power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to supress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate.

  15. Dosimetric effect of intrafraction tumor motion in phase gated lung stereotactic body radiotherapy

    SciTech Connect (OSTI)

    Zhao Bo; Yang Yong; Li Tianfang; Li Xiang; Heron, Dwight E.; Huq, M. Saiful [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States) and Department of Radiation Oncology, UT Southwestern Medical Center, Dallas, Texas 75390 (United States); Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)

    2012-11-15T23:59:59.000Z

    Purpose: A major concern for lung intensity modulated radiation therapy delivery is the deviation of actually delivered dose distribution from the planned one due to simultaneous movements of multileaf collimator (MLC) leaves and tumor. For gated lung stereotactic body radiotherapy treatment (SBRT), the situation becomes even more complicated because of SBRT's characteristics such as fewer fractions, smaller target volume, higher dose rate, and extended fractional treatment time. The purpose of this work is to investigate the dosimetric effect of intrafraction tumor motion during gated lung SBRT delivery by reconstructing the delivered dose distribution with real-time tumor motion considered. Methods: The tumor motion data were retrieved from six lung patients. Each of them received three fractions of stereotactic radiotherapy treatments with Cyberknife Synchrony (Accuray, Sunnyvale, CA). Phase gating through an external surrogate was simulated with a gating window of 5 mm. The resulting residual tumor motion curves during gating (beam-on) were retrieved. Planning target volume (PTV) was defined as physician-contoured clinical target volume (CTV) surrounded by an isotropic 5 mm margin. Each patient was prescribed with 60 Gy/3 fractions. The authors developed an algorithm to reconstruct the delivered dose with tumor motion. The DMLC segments, mainly leaf position and segment weighting factor, were recalculated according to the probability density function of tumor motion curve. The new DMLC sequence file was imported back to treatment planning system to reconstruct the dose distribution. Results: Half of the patients in the study group experienced PTV D95% deviation up to 26% for fractional dose and 14% for total dose. CTV mean dose dropped by 1% with tumor motion. Although CTV is almost covered by prescribed dose with 5 mm margin, qualitative comparison on the dose distributions reveals that CTV is on the verge of underdose. The discrepancy happens due to tumor excursion outside of the gating window, which, for our study group, is mainly caused by baseline shift, i.e., the change in general trend of the motion curve during extended period of treatment time. Conclusions: The dose deviation in PTV and CTV due to target motion is not always negligible in gated SBRT. Although CTVs are covered sufficiently with prescribed dose in most cases, some are on the verge of underdose due to large tumor excursion caused by factors such as baseline shift.

  16. Modeling the formation of boron carbide particles in an aerosol flow reactor

    SciTech Connect (OSTI)

    Xiong, Y.; Pratsinis, S.E. (Dept. of Chemical Engineering, Center for Aerosol Processes, Univ. of Cincinnati, Cincinnati, OH (United States)); Weimer, A.W. (Ceramics and Advanced Materials Research, Dow Chemical U.S.A., Midland, MI (United States))

    1992-11-01T23:59:59.000Z

    In this paper the formation of submicron crystals of boron carbide (B[sub 4]C) by coagulation and sintering by the rapid carbothermal reduction of intimately mixed carbon-boron oxide powders in an aerosol flow reactor at temperatures above the boiling point of boron oxide is investigated. High heating rates (10[sup 5] K/s) force rapid evaporation of boron oxide and suboxides from the precursor powder, resulting in its rupture and formation of boron carbide molecular clusters that grow to macroscopic particles by coagulation. Consequently, the formation and growth of B[sub 4]C particles are described by simultaneous interparticle collision and coalescence using a two-dimensional particle-size distribution model that traces the evolution of both size and shape characteristics of the particles through their volume and surface area. In addition to the coagulation term, the governing population balance equation includes a coalescence contribution based on B[sub 4]C sintering law.

  17. Compositional Control of Surface Oxides on Metal Alloys using Photons: Dynamic Simulations and Experiments

    SciTech Connect (OSTI)

    Chang, C.; Sankaranarayanan, S; Ruzmetov, D; Engelhard, M; Kaxiras, E; Ramanathan, S

    2010-01-01T23:59:59.000Z

    We report on the ability to modify the structure and composition of ultrathin oxides grown on Ni and Ni-Al alloy surfaces at room temperature utilizing photon illumination. We find that the nickel-oxide formation is enhanced in the case of oxidation under photo-excitation. The enhanced oxidation kinetics of nickel in 5% Ni-Al alloy is corroborated by experimental and simulation studies of natural and photon-assisted oxide growth on pure Ni(100) surfaces. In case of pure Ni substrates, combined x-ray photoelectron spectroscopy analysis, and atomic force microscope current mapping support the deterministic role of the structure of nickel passive-oxide films on their nanoscale corrosion resistance. Atomistic simulations involving dynamic charge transfer predict that the applied electric field overcomes the activation-energy barrier for ionic migration, leading to enhanced oxygen incorporation into the oxide, enabling us to tune the mixed-oxide composition at atomic length scales. Atomic scale control of ultrathin oxide structure and morphology in the case of pure substrates as well as compositional tuning of complex oxide in the case of alloys leads to excellent passivity as verified from potentiodynamic polarization experiments.

  18. Hair follicle Formation of

    E-Print Network [OSTI]

    Chuong, Cheng-Ming

    Hair follicle Formation of new follicles Bud Healed skin Hair bulge Open wound Epidermis a b Dermis 1950s and help to explain the controversy. What is the origin of the cells that make up these new hair follicles? Are they derived from existing hair follicles located at the wound edge

  19. Variation of the shape and morphological properties of silica and metal oxide powders by electro homogeneous precipitation

    DOE Patents [OSTI]

    Harris, Michael T. (Knoxville, TN); Basaran, Osman A. (Oak Ridge, TN); Sisson, Warren G. (Oak Ridge, TN); Brunson, Ronald R. (Lenoir City, TN)

    1997-01-01T23:59:59.000Z

    The present invention provides a method for preparing irreversible linear aggregates (fibrils) of metal oxide powders by utilizing static or pulsed DC electrical fields across a relatively non-conducting liquid solvent in which organometal compounds or silicon alkoxides have been dissolved. The electric field is applied to the relatively non-conducting solution throughout the particle formation and growth process promoting the formation of either linear aggregates (fibrils) or spherical shaped particles as desired. Thus the present invention provides a physical method for altering the size, shape and porosity of precursor hydrous metal oxide or hydrous silicon oxide powders for the development of advanced ceramics with improved strength and insulating capacity.

  20. Reaction network and kinetics for the catalytic oxidation of toluene over V sub 2 O sub 5

    SciTech Connect (OSTI)

    Zhu, J.; Andersson, L.T. (Univ. of Lund (Sweden))

    1990-11-01T23:59:59.000Z

    The oxidation of three methyl-diphenylmethane isomers and of bibenzyl, benzyl alcohol, and benzaldehyde, which are intermediates in the catalytic oxidation of toluene over V{sub 2}O{sub 5}, has been studied to elucidate the reaction network and relative importance of various reactions. Selectivity dependences reveal that the network is composed mainly of three parallel reaction routes: (1) side-chain oxidation with consecutive reactions, (2) oxidative coupling with both parallel and consecutive reactions, and (3) carbon oxide formation. Coupling products are not negligible, with an initial selectivity of 29% (400{degree}C). Anthraquinone is produced mainly from o-methyl-diphenylmethane conditions and catalyst used. Selectivity dependences suggested product lumping and a simplified network. Kinetic analysis of this reaction network indicates that higher temperatures favor route 2 over route 1. The same initial intermediates for route 1 of side-chain oxidation and for route 2 of oxidative coupling are suggested.