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1

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

2

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

3

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

Looking at Transistor Gate Oxide Formation in Real Time Print Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 Å range (1-2 nm). However, little information exists on the oxidation process at this thickness. Available results are either for thicker layers grown under high-pressure conditions or for only the first couple of monolayers studied under high-vacuum conditions. Now, for the first time, a group of researchers has obtained real-time oxidation results for this elusive range. Using the ambient-pressure x-ray photoelectron spectroscopy (APXPS) endstation at ALS Beamline 9.3.2, they examined oxidation of Si(100) at pressures up to 1 torr and temperatures up to 450 ºC. The Si 2p chemical shifts allowed determination of oxide thickness as a function of time with a precision of 1-2 Å. The initial oxidation rate was very high (up to ~234 Å/h). Then, after an initial oxide thickness of 6-22 Å was formed, the rate decreased markedly (~1.5-4.0Å/h). Neither rate regime can be explained by the standard Deal-Grove (D-G) model for Si oxidation. These results are a significant step toward developing a better understanding of this critical thickness regime.

4

Looking at Transistor Gate Oxide Formation in Real Time  

NLE Websites -- All DOE Office Websites (Extended Search)

elemental Si (Si0) and the peak at the ca. 4.4 eV higher binding energy as that of stoichiometric oxide (Si4+). From the measured ratio of Si4+ intensity to Si0, the thickness of...

5

Twin logic gates: improved logic reliability by redundancy concerning gate oxide breakdown  

Science Conference Proceedings (OSTI)

Because of the aggressive scaling of integrated circuits and the given limits of atomic scales, circuit designers have to become more and more aware of the arising reliability and yield concerns. So far, only very little research efforts have been put ... Keywords: gate oxide breakdown, integrated circuit design, redundant systems, reliability

Hagen Saemrow; Claas Cornelius; Frank Sill; Andreas Tockhorn; Dirk Timmermann

2009-08-01T23:59:59.000Z

6

Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology  

E-Print Network (OSTI)

A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical, and structural properties were investigated experimentally. The incorporation of Hf into TaOx impacted the electrical properties. The doping process improved the effective dielectric constant, reduced the fixed charge density, and increased the dielectric strength. The leakage current density also decreased with the Hf doping concentration. MOS capacitors with sub-2.0 nm equivalent oxide thickness (EOT) have been achieved with the lightly Hf-doped TaOx. The low leakage currents and high dielectric constants of the doped films were explained by their compositions and bond structures. The Hf-doped TaOx film is a potential high-k gate dielectric for future MOS transistors. A 5 ?? tantalum nitride (TaNx) interface layer has been inserted between the Hf-doped TaOx films and the Si substrate to engineer the high-k/Si interface layer formation and properties. The electrical characterization result shows that the insertion of a 5 ?? TaNx between the doped TaOx films and the Si substrate decreased the film's leakage current density and improved the effective dielectric constant (keffective) value. The improvement of these dielectric properties can be attributed to the formation of the TaOxNy interfacial layer after high temperature O2 annealing. The main drawback of the TaNx interface layer is the high interface density of states and hysteresis, which needs to be decreased. Advanced metal nitride gate electrodes, e.g., tantalum nitride, molybdenum nitride, and tungsten nitride, were investigated as the gate electrodes for atomic layer deposition (ALD) HfO2 high-k dielectric material. Their physical and electrical properties were affected by the post metallization annealing (PMA) treatment conditions. Work functions of these three gate electrodes are suitable for NMOS applications after 800?°C PMA. Metal nitrides can be used as the gate electrode materials for the HfO2 high-k film. The novel high-k gate stack structures studied in this study are promising candidates to replace the traditional poly-Si-SiO2 gate stack structure for the future CMOS technology node.

Lu, Jiang

2005-12-01T23:59:59.000Z

7

Work function control at metal high-dielectric-constant gate oxide interfaces  

Science Conference Proceedings (OSTI)

There has been difficulty in finding metals of sufficiently large or small effective work function to act as metal electrodes on high-dielectric-constant gate oxides. To understand the factors affecting the effective work function, we have calculated ... Keywords: High K oxides, Metal gates

K. Tse; J. Robertson

2008-01-01T23:59:59.000Z

8

Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films  

E-Print Network (OSTI)

Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor (MOSFET) and nonvolatile memory. ZrHfO has excellent gate dielectric properties and can be prepared into MOS structure with a low equivalent oxide thickness (EOT). Ruthenium (Ru) modification effects on the ZrHfO high-k MOS capacitor have been investigated. The bulk and interfacial properties changed with the inclusion of Ru nanoparticles. The permittivity of the ZrHfO film was increased while the energy depth of traps involved in the current transport was lowered. However, the barrier height of titanium nitride (TiN)/ZrHfO was not affected by the Ru nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer can be replaced by the novel floating gate structure composed of discrete nanodots embedded in the high-k film. By replacing the SiO2 layer with the ZrHfO film, promising memory functions, e.g., low programming voltage and long charge retention time, can be expected. In this study, the ZrHfO high-k MOS capacitors that separately contain nanocrystalline ruthenium oxide (nc-RuO), indium tin oxide (nc-ITO), and zinc oxide (nc-ZnO) have been successfully fabricated by the sputtering deposition method followed with the rapid thermal annealing process. Material and electrical properties of these kinds of memory devices have been investigated using analysis tools such as XPS, XRD, and HRTEM; electrical characterizations such as C-V, J-V, CVS, and frequency-dependent measurements. All capacitors showed an obvious memory window contributed by the charge trapping effect. The formation of the interface at the nc-RuO/ZrHfO and nc-ITO/ZrHfO contact regions was confirmed by the XPS spectra. Charges were deeply trapped to the bulk nanocrystal sites. However, a portion of holes were loosely trapped at the nanocrystal/ZrHfO interface. Charges trapped to the different sites lead to different detrapping characteristics. For further improving the memory functions, the dual-layer nc-ITO and -ZnO embedded ZrHfO gate dielectric stacks have been fabricated. The dual-layer embedded structure contains two vertically-separated nanocrystal layers with a higher density than the single-layer embedded structure. The critical memory functions, e.g., memory window, programming efficiency, and charge retention can be improved by using the dual-layer nanocrystals embedded floating gate structure. This kind of gate dielectric stack is vital for the next-generation nonvolatile memory applications.

Lin, Chen-Han

2011-08-01T23:59:59.000Z

9

HRTEM image simulations for the study of ultra-thin gate oxides  

SciTech Connect

We have performed high resolution transmission electron microscope (HRTEM) image simulations to qualitatively assess the visibility of various structural defects in ultra-thin gate oxides of MOSFET devices, and to quantitatively examine the accuracy of HRTEM in performing gate oxide metrology. Structural models contained crystalline defects embedded in an amorphous 16 {angstrom}-thick gate oxide. Simulated images were calculated for structures viewed in cross-section. Defect visibility was assessed as a function of specimen thickness and defect morphology, composition, size and orientation. Defect morphologies included asperities lying on the substrate surface, as well as ''bridging'' defects connecting the substrate to the gate electrode. Measurements of gate oxide thickness extracted from simulated images were compared to actual dimensions in the model structure to assess TEM accuracy for metrology. The effects of specimen tilt, specimen thickness, objective lens defocus and coefficient of spherical aberration (C{sub s}) on measurement accuracy were explored for nominal 10{angstrom} gate oxide thickness. Results from this work suggest that accurate metrology of ultra-thin gate oxides (i.e. limited to several per cent error) is feasible on a consistent basis only by using a C{sub s}-corrected microscope. However, fundamental limitations remain for characterizing defects in gate oxides using HRTEM, even with the new generation of C{sub s}-corrected microscopes.

Taylor, Seth T.; Mardinly, John; O'Keefe, Michael A.

2001-07-17T23:59:59.000Z

10

Electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor capacitors with various nitrogen concentration profiles  

Science Conference Proceedings (OSTI)

The comparative studies of electrical and physical characteristics of HfLaON-gated metal-oxide-semiconductor (MOS) capacitors with various nitrogen concentration profiles (NCPs) were investigated. Various NCPs in HfLaON gate dielectrics were adjusted ... Keywords: Charge trapping, Current-conduction, High-k dielectric, Metal-oxide-semiconductor (MOS), Nitrogen concentration profiles (NCPs)

Chin-Lung Cheng; Jeng-Haur Horng; Hung-Yang Tsai

2011-02-01T23:59:59.000Z

11

In situ oxidation of subsurface formations  

DOE Patents (OSTI)

Methods and systems for treating a hydrocarbon containing formation described herein include providing heat to a first portion of the formation from a plurality of heaters in the first portion, producing produced through one or more production wells in a second portion of the formation, reducing or turning off heat provided to the first portion after a selected time, providing an oxidizing fluid through one or more of the heater wells in the first portion, providing heat to the first portion and the second portion through oxidation of at least some hydrocarbons in the first portion, and producing fluids through at least one of the production wells in the second portion. The produced fluids may include at least some oxidized hydrocarbons produced in the first portion.

Beer, Gary Lee (Houston, TX); Mo, Weijian (Sugar Land, TX); Li, Busheng (Houston, TX); Shen, Chonghui (Calgary, CA)

2011-01-11T23:59:59.000Z

12

Dual Gate Thin Film Transistors Based on Indium Oxide Active Layers  

SciTech Connect

Polycrystalline Indium Oxide (In{sub 2}O{sub 3}) thin films were employed as an active channel layer for the fabrication of bottom and top gate thin film transistors. While conventional SiO{sub 2} served as a bottom gate dielectric, cross-linked poly-4-vinylphenol (PVP) was used a top gate dielectric. These nano-crystalline TFTs exhibited n-channel behavior with their transport behavior highly dependent on the thickness of the channel. The correlation between the thickness of the active layer and TFT parameters such as on/off ratio, field-effect mobility, threshold voltage were carried out. The optical spectra revealed a high transmittance in the entire visible region, thus making them promising candidates for the display technology.

Kekuda, Dhananjaya; Rao, K. Mohan; Tolpadi, Amita [Department of Physics, Manipal Institute of Technology, Manipal University, Manipal 576 104 (India); Chu, C. W. [Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan (China)

2011-07-15T23:59:59.000Z

13

Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- ? gate oxides  

Science Conference Proceedings (OSTI)

The empirical relationship between electronegativity and effective work function is applied to a diverse set of multi-element electrode materials on hafnium dioxide (HfO"2) gate dielectrics. To accommodate the multi-element nature of metal gate electrodes ... Keywords: Effective work function, Electronegativity, Hafnium dioxide, Metal gate electrode

J. K. Schaeffer; D. C. Gilmer; C. Capasso; S. Kalpat; B. Taylor; M. V. Raymond; D. Triyoso; R. Hegde; S. B. Samavedam; B. E. White, Jr

2007-09-01T23:59:59.000Z

14

Estimation of gate-to-channel tunneling current in ultra-thin oxide sub-50nm double gate devices  

Science Conference Proceedings (OSTI)

Double gate (DG) FETs have emerged as the most promising technology for sub-50nm transistor design. However, analysis and control of the gate tunneling leakage in DGFET is necessary to fully exploit their advantages. In this paper we have modeled (numerically ... Keywords: Direct tunneling, Double gate, Leakage, Quantum confinement

Saibal Mukhopadhyay; Keunwoo Kim; Jae-Joon Kim; Shih-Hsien Lo; Rajiv V. Joshi; Ching-Te Chuang; Kaushik Roy

2007-08-01T23:59:59.000Z

15

Aromatics Oxidation and Soot Formation in Flames  

SciTech Connect

This project is concerned with the kinetics and mechanisms of aromatics oxidation and the growth process to polycyclic aromatic hydrocarbons (PAH) of increasing size, soot and fullerenes formation in flames. The overall objective of the experimental aromatics oxidation work is to extend the set of available data by measuring concentration profiles for decomposition intermediates such as phenyl, cyclopentadienyl, phenoxy or indenyl radicals which could not be measured with molecular-beam mass spectrometry to permit further refinement and testing of benzene oxidation mechanisms. The focus includes PAH radicals which are thought to play a major role in the soot formation process while their concentrations are in many cases too low to permit measurement with conventional mass spectrometry. The radical species measurements are used in critical testing and improvement of a kinetic model describing benzene oxidation and PAH growth. Thermodynamic property data of selected species are determined computationally, for instance using density functional theory (DFT). Potential energy surfaces are explored in order to identify additional reaction pathways. The ultimate goal is to understand the conversion of high molecular weight compounds to nascent soot particles, to assess the roles of planar and curved PAH and relationships between soot and fullerenes formation. The specific aims are to characterize both the high molecular weight compounds involved in the nucleation of soot particles and the structure of soot including internal nanoscale features indicative of contributions of planar and/or curved PAH to particle inception.

Howard, J. B.; Richter, H.

2005-03-29T23:59:59.000Z

16

Gated Conductance of Thin Indium Tin Oxide - The Simplest Transistor  

E-Print Network (OSTI)

Transistors are the fundamental building block of modern electronic devices. So far, all transistors are based on various types of semiconductor junctions. The most common bipolar-junction transistors and metal-oxide-semiconductor field-effect transistors contain p-n junctions to control the current, depending on applied biases across the junctions. Thin-film transistors need metal-semiconductor junctions for injecting and extracting electrons from their channels. Here, by coating a heavily-doped thin indium-tin-oxide (ITO) film through a shadow mask onto a biopolymer chitosan/ITO/glass substrate, we can have a high-performance junctionless transparent organic-inorganic hybrid thin film transistor. This could be the simplest transistor in the world, to our knowledge, not only in its structure, but also its fabrication process. In addition, the device performance is found to be greatly enhanced using a reinforced chitosan/SiO2 hybrid bilayer dielectric stack. Our results clearly show that this architecture can...

Jiang, Jie; Sun, Jia; Dou, Wei; Zhang, Qing

2012-01-01T23:59:59.000Z

17

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap Semiconductor MOSFETs - Jon Ihlefeld, SNL  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

-5 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 -6 -4 -2 0 2 4 6 8 10 |J Leakage | (A-cm -2 ) Semiconductor Voltage (V) Engineered Gate Oxides for Wide Bandgap S emiconductor M OSFETs* Jon I hlefeld, M ichael B rumbach, S andeepan D asGupta, and Stanley AtciEy Sandia NaGonal Laboratories *Sponsored b y t he U .S. D epartment o f E nergy's O ffice o f E lectricity E nergy S torage Systems P rogram jihlefe@sandia.gov, 505---844---3162; s atciE@sandia.gov, 505---284---2701 Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP Cooling Power electronics Energy storage Energy storage -V gate Low defect oxide Metal gate Wide

18

Heating subsurface formations by oxidizing fuel on a fuel carrier  

SciTech Connect

A method of heating a portion of a subsurface formation includes drawing fuel on a fuel carrier through an opening formed in the formation. Oxidant is supplied to the fuel at one or more locations in the opening. The fuel is combusted with the oxidant to provide heat to the formation.

Costello, Michael; Vinegar, Harold J.

2012-10-02T23:59:59.000Z

19

Stress evolution during Ni-Si compound formation for fully silicided (FUSI) gates  

Science Conference Proceedings (OSTI)

The stress (force) evolution during the formation of different Ni silicide phases was monitored by in situ curvature measurements, for the reaction of thin Ni films of various thicknesses with 100nm polycrystalline-Si deposited on oxidized (100) Si substrates. ... Keywords: In situ XRD, In situ curvature measurements, Ni-silicides

C. Torregiani; C. Van Bockstael; C. Detavernier; C. Lavoie; A. Lauwers; K. Maex; J. A. Kittl

2007-11-01T23:59:59.000Z

20

Ceramic oxide powders and the formation thereof  

DOE Patents (OSTI)

Ceramic oxide powders and a method for their preparation. Ceramic oxide powders are obtained using a flame process whereby two or more precursors of ceramic oxides are introduced into a counterflow diffusion flame burner wherein said precursors are converted into ceramic oxide powders. The morphology, particle size, and crystalline form of the ceramic oxide powders are determined by process conditions.

Katz, Joseph L. (Baltimore, MD); Hung, Cheng-Hung (Baltimore, MD)

1993-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


21

Ceramic oxide powders and the formation thereof  

DOE Patents (OSTI)

Ceramic oxide powders and a method for their preparation. Ceramic oxide powders are obtained using a flame process whereby two or more precursors of ceramic oxides are introduced into a counterflow diffusion flame burner wherein said precursors are converted into ceramic oxide powders. The morphology, particle size, and crystalline form of the ceramic oxide powders are determined by process conditions. 14 figures.

Katz, J.L.; Chenghung Hung.

1993-12-07T23:59:59.000Z

22

Formation of metal oxides by cathodic arc deposition  

DOE Green Energy (OSTI)

Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

1995-03-01T23:59:59.000Z

23

Aromatics oxidation and soot formation in flames  

SciTech Connect

Work during this contract period has been concerned with the mechanisms through which aromatics are formed and destroyed in flames, and the processes responsible for soot formation. Recent progress has been primarily in two areas: experiments and modeling of the soot nucleation process in low pressure benzene flames and preparation for experiments on the destruction mechanisms of benzene. In addition, we have incorporated weak collision'' formalisms into a fall-off computer code.

Howard, J.B.

1989-01-01T23:59:59.000Z

24

Tertiary oxidation in Westwater Canyon member of Morrison formation  

SciTech Connect

Hematitic oxidation in the Westwater Canyon Sandstone Member of the Morrison Formation extends along the outcrop from the Pipeline fault northeast of Gallup, New Mexico, to the San Mateo fault north of Grants, New Mexico. The hematitic sandstone forms a broad lobe in the subsurface to a depth of 2,400 ft (730 m). The downdip edge of this sandstone arcs eastward from northeast Church Rock through Crownpoint, and southeastward to the west edge of the Ambrosia Lake district. The red sandstone is bordered on the downdip side by a band of limonitic oxidation, which interfingers with reduced sandstones basinward. The limonitic oxidation forms a relatively narrow band along the north and west sides of the hematitic lobe but expands progressively in an east and southeast direction. Weak limonitic oxidation, as indicated by the absence of pyrite and by a bleached to faint yellowish-gray color, appears to extend from the San Mateo fault eastward under Mount Taylor to the Rio Puerco of the east. The hematitic oxidation is epigenetic and is believed to be of early Miocene to late Pliocene age. The limonitic oxidation follows the present ground-water flow pattern and probably dates from late Pliocene to the Holocene. The oxidation patterns are important in uranium exploration because the hematitic area is essentially barren, whereas the limonitic areas contain ore deposits that are in the process of being destroyed by oxidation.

Saucier, A.E.

1980-01-01T23:59:59.000Z

25

Characterization of leakage current in thin gate oxide subjected to 10 KeV X-ray irradiation  

SciTech Connect

Two components of the low-field current have been identified in thin oxides, following 10 KeV X-ray irradiation. The first component, observed in the direct tunneling region, can be removed by a 100 C anneal, and is also greatly suppressed if the irradiation is done in vacuum or in a nitrogen ambient, or if the oxide is preannealed before irradiation. The origin of this current is speculated to be related to adsorbed water molecules on the gate surface. The second component is observed to begin in the pre-Fowler-Nordheim tunneling (FNT) region and extends into the FNT region, only in oxides less than {approximately}8 nm thick, and persists even after several days of anneal at 300 C. This current exhibits a power law dependence on radiation dose. The origin of this second component is believed to be due to the trap-assisted tunneling via neutral electron traps, similar to the leakage current observed in the oxide after high-voltage stress.

Ling, C.H.; Ang, C.H.; Ang, D.S.

2000-03-01T23:59:59.000Z

26

F3, A Comparative Study of Thermal and Deposited Gate Oxides on ...  

Science Conference Proceedings (OSTI)

Thermal oxidation processes consisted of dry oxidation at 1175C followed by an .... Microstructure and Properties of Colloidal ITO Films and Cold-Sputtered ITO Films .... Graphene Produced from Ion Implanted Semi-Insulating Silicon Carbide.

27

Accelerated Publication: Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric  

Science Conference Proceedings (OSTI)

Ga"2O"3(Gd"2O"3) [GGO] 3.5nm-thick, with an in situ Al"2O"3 cap 1.5nm thick, has been directly deposited on Ge substrate without employing interfacial passivation layers. The equivalent oxide thickness (EOT) of the gate stack is 1.38-nm. The metal-oxide-semiconductor ... Keywords: EOT, Germanium, High-? dielectric, MOS

L. K. Chu; T. H. Chiang; T. D. Lin; Y. J. Lee; R. L. Chu; J. Kwo; M. Hong

2012-03-01T23:59:59.000Z

28

Cholesterol and Phytosterol Oxidation ProductsChapter 9 Formation and Content of Cholesterol Oxidation Products in Meat and Meat Products  

Science Conference Proceedings (OSTI)

Cholesterol and Phytosterol Oxidation Products Chapter 9 Formation and Content of Cholesterol Oxidation Products in Meat and Meat Products Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - Nutritio

29

Cholesterol and Phytosterol Oxidation ProductsChapter 8 Formation and Content of Cholesterol Oxidation Products in Milk and Dairy Products  

Science Conference Proceedings (OSTI)

Cholesterol and Phytosterol Oxidation Products Chapter 8 Formation and Content of Cholesterol Oxidation Products in Milk and Dairy Products Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - Nutriti

30

Cholesterol and Phytosterol Oxidation ProductsChapter 11 Formation and Content of Cholesterol Oxidation Products in Other Foods  

Science Conference Proceedings (OSTI)

Cholesterol and Phytosterol Oxidation Products Chapter 11 Formation and Content of Cholesterol Oxidation Products in Other Foods Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - Nutrition - Bioche

31

Cholesterol and Phytosterol Oxidation ProductsChapter 10 Formation and Content of Cholesterol Oxidation Products in Seafood and Seafood Products  

Science Conference Proceedings (OSTI)

Cholesterol and Phytosterol Oxidation Products Chapter 10 Formation and Content of Cholesterol Oxidation Products in Seafood and Seafood Products Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - N

32

Cholesterol and Phytosterol Oxidation ProductsChapter 7 Formation and Content of Cholesterol Oxidation Products in Egg and Egg Products  

Science Conference Proceedings (OSTI)

Cholesterol and Phytosterol Oxidation Products Chapter 7 Formation and Content of Cholesterol Oxidation Products in Egg and Egg Products Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - Nutrition

33

Cholesterol and Phytosterol Oxidation ProductsChapter 15 Formation and Content of Phytosterol Oxidation Products in Foods  

Science Conference Proceedings (OSTI)

Cholesterol and Phytosterol Oxidation Products Chapter 15 Formation and Content of Phytosterol Oxidation Products in Foods Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - Nutrition - Biochemistry

34

Solution mining and heating by oxidation for treating hydrocarbon containing formations  

DOE Patents (OSTI)

A method for treating an oil shale formation comprising nahcolite includes providing a first fluid to a portion of the formation. A second fluid is produced from the portion. The second fluid includes at least some nahcolite dissolved in the first fluid. A controlled amount of oxidant is provided to the portion of the formation. Hydrocarbon fluids are produced from the formation.

Vinegar, Harold J. (Bellaire, TX); Stegemeier, George Leo (Houston, TX)

2009-06-23T23:59:59.000Z

35

Damascene TiN-Gd2O3-gate stacks: Gentle fabrication and electrical properties  

Science Conference Proceedings (OSTI)

In this work, we present MOS capacitors and field effect transistors with a crystalline gadolinium oxide (Gd"2O"3) gate dielectric and metal gate electrode (titanium nitride) fabricated in a gentle damascene gate last process. Details of the gate last ... Keywords: Crystalline high-k dielectrics, Damascene metal gate technology, Gadolinium oxide (Gd2O3), Gentle process integration, MOSFET, Metal gate electrode

Ralf Endres; Tillmann Krauss; Frank Wessely; Udo Schwalke

2011-12-01T23:59:59.000Z

36

Chemical Bonding, Interfaces and Defects in Hafnium Oxide/Germanium Oxynitride Gate Stacks on Ge (100)  

SciTech Connect

Correlations among interface properties and chemical bonding characteristics in HfO{sub 2}/GeO{sub x}N{sub y}/Ge MIS stacks were investigated using in-situ remote nitridation of the Ge (100) surface prior to HfO{sub 2} atomic layer deposition (ALD). Ultra thin ({approx}1.1 nm), thermally stable and aqueous etch-resistant GeO{sub x}N{sub y} interfaces layers that exhibited Ge core level photoelectron spectra (PES) similar to stoichiometric Ge{sub 3}N{sub 4} were synthesized. To evaluate GeO{sub x}N{sub y}/Ge interface defects, the density of interface states (D{sub it}) was extracted by the conductance method across the band gap. Forming gas annealed (FGA) samples exhibited substantially lower D{sub it} ({approx} 1 x 10{sup 12} cm{sup -2} eV{sup -1}) than did high vacuum annealed (HVA) and inert gas anneal (IGA) samples ({approx} 1x 10{sup 13} cm{sup -2} eV{sup -1}). Germanium core level photoelectron spectra from similar FGA-treated samples detected out-diffusion of germanium oxide to the HfO{sub 2} film surface and apparent modification of chemical bonding at the GeO{sub x}N{sub y}/Ge interface, which is related to the reduced D{sub it}.

Oshima, Yasuhiro; /Stanford U., Materials Sci. Dept.; Sun, Yun; /SLAC, SSRL; Kuzum, Duygu; /Stanford U.; Sugawara, Takuya; Saraswat, Krishna C.; Pianetta, Piero; /SLAC, SSRL; McIntyre, Paul C.; /Stanford U., Materials Sci. Dept.

2008-10-31T23:59:59.000Z

37

Formation of thin walled ceramic solid oxide fuel cells  

DOE Patents (OSTI)

To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

Claar, Terry D. (Tisle, IL); Busch, Donald E. (Hinsdale, IL); Picciolo, John J. (Lockport, IL)

1989-01-01T23:59:59.000Z

38

Porous anodic aluminum oxide scaffolds; formation mechanisms and applications  

E-Print Network (OSTI)

Nanoporous anodic aluminium oxide (AAO) can be created with pores that self-assemble into ordered configurations. Nanostructured metal oxides have proven to be very useful as scaffolds for growth of nanowires and nanotubes ...

Oh, Jihun

2010-01-01T23:59:59.000Z

39

V1, Alkanethiol Island Formation on Single Crystal Zinc Oxide ...  

Science Conference Proceedings (OSTI)

... through the Renewable Energy Materials Research Science and Engineering Center is ... A2, Observation and Elimination of Indium Surface Segregation ... B5, The Universal Optimal Seebeck Coefficient for Maximum Power Factor ..... X9, Solution-Processed Zirconium Oxide and Integration with Zinc-Tin Oxide Thin-

40

Dry etching device quality high-? GaxGdyOz gate oxide in SiCl4 chemistry for low resistance ohmic contact realisation in fabricating III-V MOSFETs  

Science Conference Proceedings (OSTI)

This paper investigates the reactive ion etching (RIE) of Ga"xGd"yO"z, a device quality high-@k gate oxide for a low resistance ohmic contact realisation in fabricating III-V metal-oxide semiconductor field-effect-transistors (MOSFETs) based on high ... Keywords: Dry etching, Ga2O3-Gd2O3, GaxGdyOz, GaAs MOSFET, High-? oxide, RIE, SiCl4

X. Li; H. Zhou; R. J. W. Hill; P. Longo; M. Holland; I. G. Thayne

2010-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


41

Formation of zinc oxide films using submicron zinc particle dispersions  

SciTech Connect

The thermal oxidation of submicron metallic Zn particles was studied as a method to form nanostructured ZnO films. The particles used for this work were characterized by electron microscopy, x-ray diffraction and thermal analysis to evaluate the Zn-ZnO core shell structure, surface morphology, and oxidation characteristics. Significant nanostructural changes were observed for films annealed to 400 C or higher, where nanoflakes, nanoribbons, nanoneedles and nanorods were formed as a result of stress induced fractures arising in the ZnO outer shell due to differential thermal expansion between the metallic Zn core and the ZnO shell. Mass transport occurs through these defects due to the high vapor pressure for metallic Zn at temperatures above 230 C, whereupon the Zn vapor rapidly oxidizes in air to form the ZnO nanostructures. The Zn particles were also incorporated into zinc indium oxide precursor solutions to form thin film transistor test structures to evaluate the potential of forming nanostructured field effect sensors using simple solution processing.

Rajachidambaram, Meena Suhanya; Varga, Tamas; Kovarik, Libor; Sanghavi, Rahul P.; Shutthanandan, V.; Thevuthasan, Suntharampillai; Han, Seungyeol; Chang, Chih-hung; Herman, Gregory S.

2012-07-27T23:59:59.000Z

42

Synergetic effects of double laser pulses for the formation of mild plasma in water: Toward non-gated underwater laser-induced breakdown spectroscopy  

Science Conference Proceedings (OSTI)

We experimentally study the dynamics of the plasma induced by the double-laser-pulse irradiation of solid target in water, and find that an appropriate choice of the pulse energies and pulse interval results in the production of an unprecedentedly mild (low-density) plasma, the emission spectra of which are very narrow even without the time-gated detection. The optimum pulse interval and pulse energies are 15-30 {mu}s and about {approx}1 mJ, respectively, where the latter values are much smaller than those typically employed for this kind of study. In order to clarify the mechanism for the formation of mild plasma we examine the role of the first and second laser pulses, and find that the first pulse produces the cavitation bubble without emission (and hence plasma), and the second pulse induces the mild plasma in the cavitation bubble. These findings may present a new phase of underwater laser-induced breakdown spectroscopy.

Sakka, Tetsuo [Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011 (Japan); Institute of Sustainability Science, Kyoto University, Uji, Kyoto 611-0011 (Japan); Tamura, Ayaka; Nakajima, Takashi; Fukami, Kazuhiro; Ogata, Yukio H. [Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011 (Japan)

2012-05-07T23:59:59.000Z

43

Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors  

Science Conference Proceedings (OSTI)

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

Ong, B. S.; Pey, K. L. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Ong, C. Y.; Tan, C. S. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Antoniadis, D. A. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Fitzgerald, E. A. [Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore); Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2011-05-02T23:59:59.000Z

44

OXIDES OF NITROGEN: FORMATION AND CONTROL IN RESOURCE RECOVERY FACILITIES  

E-Print Network (OSTI)

utilizing all of the known techniques for NOx reduction. To be precise, the NOx formed within the flame] and several others [6, 7] have suggested certain reduction methods which are consistent with NOx formation, not solid waste. The results of NOx reduction techniques in coal combustion should be applied with caution

Columbia University

45

Dry etching of a device quality high-k GaxGdyOz gate oxide in CH4/H2-O2 chemistry for the fabrication of III-V MOSFETs  

Science Conference Proceedings (OSTI)

This paper investigates the reactive ion etching of Ga"xGd"yO"z, a device quality high-k gate oxide for the fabrication of III-V metal-oxide-semiconductor field-effect-transistors (MOSFETs) based on high mobility channel device layer structures. The ... Keywords: Compound semiconductor, Dry etching, Ga2O3(Gd2O3) RIE, GaxGdyOz, III-V MOSFET

X. Li; H. Zhou; R. J. W. Hill; C. D. W. Wilkinson; I. G. Thayne

2007-05-01T23:59:59.000Z

46

Lipid Oxidation PathwaysChapter 6 Glycerophospholipid Core Aldehydes: Mechanism of Formation, Methods of Detection, Natural Occurrence, and Biological Significance  

Science Conference Proceedings (OSTI)

Lipid Oxidation Pathways Chapter 6 Glycerophospholipid Core Aldehydes: Mechanism of Formation, Methods of Detection, Natural Occurrence, and Biological Significance Health Nutrition Biochemistry eChapters Health - Nutrition - Biochemistr

47

Oxide film formation from Electron Cyclotron Resonance (ECR) plasmas  

DOE Green Energy (OSTI)

The formation of SiO{sub x} films and fluorine-doped SiO{sub x} films using electron cyclotron resonance (ECR) plasma deposition is described. Parametric studies of the film composition and hydrogen content as a function of feed gas composition and RF biasing are presented. By replacing SiH{sub 4} with SiF{sub 4} in the gas feed, samples with F content from 2 at.% F to 12 at.% F are deposited, and the dielectric constant of the deposited layers decrease linearly with increasing fluorine concentration. The stability of these low dielectric constant SiO{sub x}F{sub y} layers is examined under hydrating conditions, and conditions typically found for interlayer dielectric processing in microelectronics. The hydrogen content of the SiO{sub 2} and F-doped SiO{sub 2} is characterized as a function of deposition conditions, and a model is given to describe the thermal release of H from SiO{sub 2}.

Barbour, J.C.; Apblett, C.A.; Sullivan, J.P. [and others

1997-06-01T23:59:59.000Z

48

Process damage-free damascene metal gate technology for gentle integration of epitaxially grown high-k  

Science Conference Proceedings (OSTI)

This paper presents the first successful attempt to integrate crystalline high-k gate dielectrics into a virtually damage-free damascene metal gate process. Process details as well as initial electrical characterization results on fully functional gate ... Keywords: CMP, Crystalline high-k gate dielectric, Damascene metal gate, Gadolinium oxide, Rare-earth oxide

Ralf Endres; Yordan Stefanov; Frank Wessely; Florian Zaunert; Udo Schwalke

2008-01-01T23:59:59.000Z

49

David Gates home page  

NLE Websites -- All DOE Office Websites (Extended Search)

Gates home page http:www.pppl.gov%7EdgatesSiteDr.DavidA.Gates.html (1 of 4) 8302012 9:47:58 AM David Gates home page Dr. David A. Gates Princeton Plasma Physics...

50

Duplex Oxide Formation during Transient Oxidation of Cu-5%Ni(001) Investigated by In situ UHV-TEM and XPS  

Science Conference Proceedings (OSTI)

The transient oxidation stage of a model metal alloy thin film was characterized with in situ ultra-high vacuum (UHV) transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and analytic high-resolution TEM. We observed the formations of nanosized NiO and Cu{sub 2}O islands when Cu-5a5%Ni(100) was exposed to oxygen partial pressure, pO{sub 2} = 1 x 10{sup -4} Torr and various temperatures in situ. At 350 C epitaxial Cu{sub 2}O islands formed initially and then NiO islands appeared on the surface of the Cu{sub 2}O island, whereas at 750 C NiO appeared first. XPS and TEM was used to reveal a sequential formation of NiO and then Cu{sub 2}O islands at 550 C. The temperature-dependant oxide selection may be due to an increase of the diffusivity of Ni in Cu with increasing temperature.

Yang, J.C.; Starr, D.; Kang, Y.; Luo, L.; Tong, X.; Zhou, G.

2012-05-20T23:59:59.000Z

51

Formation and evolution of self-organized Au nanorings on indium-tin-oxide surface  

Science Conference Proceedings (OSTI)

This work reports on the formation of Au nanoclusters and on their evolution in nanoring structures on indium-tin-oxide surface by sputtering deposition and annealing processes. The quantification of the characteristics of the nanorings (surface density, depth, height, and width) is performed by atomic force microscopy. The possibility to control these characteristics by tuning annealing temperature and time is demonstrated establishing relations which allow to set the process parameters to obtain nanostructures of desired morphological properties for various technological applications.

Ruffino, F.; Simone, F.; Grimaldi, M. G. [Dipartimento di Fisica e Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); MATIS CNR-IMM, via S. Sofia 64, 95123 Catania (Italy); Crupi, I. [MATIS CNR-IMM, via S. Sofia 64, 95123 Catania (Italy)

2011-01-10T23:59:59.000Z

52

Lipid Oxidation PathwaysChapter 10 Radical Formation in the Radiolysis of Starch and Lipid-Containing Starch  

Science Conference Proceedings (OSTI)

Lipid Oxidation Pathways Chapter 10 Radical Formation in the Radiolysis of Starch and Lipid-Containing Starch Health Nutrition Biochemistry eChapters Health - Nutrition - Biochemistry Press Downloadable pdf of C

53

FLOW GATING  

DOE Patents (OSTI)

BS>This invention is a fast gating system for eiectronic flipflop circuits. Diodes connect the output of one circuit to the input of another, and the voltage supply for the receiving flip-flop has two alternate levels. When the supply is at its upper level, no current can flow through the diodes, but when the supply is at its lower level, current can flow to set the receiving flip- flop to the same state as that of the circuit to which it is connected. (AEC)

Poppelbaum, W.J.

1962-12-01T23:59:59.000Z

54

THE ROLE OF SOOT PARTICLES AND NOx IN THE OXIDATION OF SO2 IN AQUEOUS SOLUTION: KINETICS, MECHANISM, AND IMPACT ON SULFATE AEROSOL FORMATION  

E-Print Network (OSTI)

AND IMPACT ON SULFATE AEROSOL FORMATION S.G. Chang, R.AND IMPACT ON SULFATE AEROSOL FORMATION * S.G. Chang, R.of acid rain and sulfate aerosol formation: 1) the oxidation

Chang, S.G.

2013-01-01T23:59:59.000Z

55

East Gate  

NLE Websites -- All DOE Office Websites (Extended Search)

East East Gate to: Rt. 59 Fermilab Village Main Entrance B u tt e r fi e ld R d . to: Farnsworth Ave, I-88 Kirk Rd. Site 56 Site 55 Buffalo Farm Lederman Science Center (Public Welcome) Prairie Trails Dog Training Area Nature Area Lake Law A.E. Sea Technical Division Illinois Accelerator Research Center Feynman Computing Center Muon Delivery Ring Main Injector Tevatron Test Accelerators Site 37 Site 39 Site 38 Neutrino Experiments Silicon Detector Facility Test Beam Facility DAB Site 50 Wilson Hall & Ramsey Auditorium (Public Welcome) Wilson St. Gate (Deliveries, Employees) NML CMTF A 1 R D D R D B RD S E O LA R D B A T A V I A R D E WILSON ST WILSON ST P IN E S T P O W E R L I N E R D N E O LA R D MCCHESNEY RD A B C D E 5 4 3 2 1 ´ 0 0.5 1 0.25 Miles Trails Public Areas Buildings Roads/Parking Ponds Fermi National Accelerator Laboratory 2013 Fermilab Site Map

56

Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks  

Science Conference Proceedings (OSTI)

The contribution from a relatively low-K SiON (K~6) interfacial transition region (ITR) between Si and transition metal high-K gate dielectrics such as nanocrystalline HfO"2 (K~20), and non-crystalline Hf Si oxynitride (K~10-12) places a significant ... Keywords: Di-vacancy defects, Ge substrates, High-K gate dielectrics, Interfacial transition regions, MOS devices, Native Ge dielectrics, Spectroscopic ellipsometry, X-ray absorption spectroscopy

G. Lucovsky; S. Lee; J. P. Long; H. Seo; J. Lning

2009-03-01T23:59:59.000Z

57

The J-K Gate  

Science Conference Proceedings (OSTI)

For many years two-input NAND, AND, NOR, OR and EX-OR gates have been commercially available as cheap quad TTL integrated circuits (IC's). Ideas on quad programmable two-input gates (three inputs per gate) have been published in the literature but have ... Keywords: Digital circuit design, EX-OR gate, inverter, J-K gate, latch, logic circuit, NAND gate, NIMP gate, OR gate, programmable gate circuit, standard gate, zero/one-true/complement element.

R. M. M. Oberman

1976-11-01T23:59:59.000Z

58

Negative oxygen ion formation in reactive magnetron sputtering processes for transparent conductive oxides  

Science Conference Proceedings (OSTI)

Reactive d.c. magnetron sputtering in Ar/O{sub 2} gas mixtures has been investigated with energy-resolved mass spectrometry. Different metal targets (Mg, Ti, Zn, In, InSn, and Sn), which are of importance for transparent conductive oxide thin film deposition, have been used to study the formation of negative ions, mainly high-energetic O{sup -}, which are supposed to induce radiation damage in thin films. Besides their energy distribution, the ions have been particularly investigated with respect to their intensity in comparison of the different target materials. To realize the comparability, various calibration factors had to be introduced. After their application, major differences in the negative ion production have been observed for the target materials. The intensity, especially of O{sup -}, differs by about two orders of magnitude. It is shown that this difference results almost exclusively from ions that gain their energy in the target sheath. Those may gain additional energy from the sputtering process or reflection at the target. Low-energetic negative ions are, however, less affected by changes of the target material. The results concerning O{sup -} formation are discussed in term of the sputtering rate from the target and are compared to models for negative ion formation.

Welzel, Thomas; Ellmer, Klaus [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Institut Solare Brennstoffe, Hahn-Meitner-Platz 1, D-14109 Berlin (Germany)

2012-11-15T23:59:59.000Z

59

Semi-analytical modeling of Ag and Au nanoparticles and fullerene (C60) embedded gate oxide compound semiconductor MOSFET memory devices  

Science Conference Proceedings (OSTI)

In this paper we present an analytical simulation study of Non-volatile MOSFET memory devices with Ag/Au nanoparticles/fullerene (C60) embedded gate dielectric stacks. We considered a long channel planar MOSFET, having a multilayer SiO2---HfO2 ... Keywords: Ag nanocrystal, Au nanocrystal, C60, Long channel MOSFET, Non-volatile memory

Amretashis Sengupta; Chandan Kumar Sarkar; Felix G. Requejo

2012-12-01T23:59:59.000Z

60

Determination of thymine glycol residues in irradiated or oxidized DNA by formation of methylglyceric acid  

Science Conference Proceedings (OSTI)

Treatment of DNA solutions with X-irradiation various oxidants including hydrogen peroxide plus ferrous ion, hydrogen peroxide plus copper ion and ascorbate, permanganate, or sonication in the presence of dissolved oxygen all produced varying amounts of thymine glycol residues. After denaturing the DNA with heat, the glycol residues were reduced and labeled at the 6 position with tritium- labeled sodium borohydride. Subsequent reaction with anhydrous methanolic HCl gave a quantitative yield of the methyl ester of methylglyceric acid, which was determined by thin layer chromatography. The method, developed using thymidine as a model, was used to ascertain the requirements for glycol formation in DNA. It was shown that hydroxyl radical generating systems, permanganate, X-irradiation, or sonication in presence of oxygen were required, but hydrogen peroxide in the absence of iron or copper and ascorbate was inactive. Application to determination of DNA damage in vivo is being explored.

Schellenberg, K.A.; Shaeffer, J.

1986-05-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


61

Physical-aware simulated annealing optimization of gate leakage in nanoscale datapath circuits  

Science Conference Proceedings (OSTI)

For CMOS technologies below 65nm, gate oxide direct tunneling current is a major component of the total power dissipation. This paper presents a simulated annealing based algorithm for the gate leakage current reduction by simultaneous scheduling, allocation ...

Saraju P. Mohanty; Ramakrishna Velagapudi; Elias Kougianos

2006-03-01T23:59:59.000Z

62

Atomic scale studies of interface formation between oxides and III-V semiconductor surfaces  

E-Print Network (OSTI)

volatile [151], but indium oxides are not [156]; therefore,with them having an indium oxide composition. Bulk In 2 O 3temperatures and the indium oxides remain in the form of

Clemens, Jonathon Boyd

2010-01-01T23:59:59.000Z

63

Manganese sulfide formation via concomitant microbial manganese oxide and thiosulfate reduction  

Science Conference Proceedings (OSTI)

The dissimilatory metal-reducing bacterium, Shewanella oneidensis MR-1 produced {gamma}-MnS (rambergite) nanoparticles during the concurrent reduction of MnO{sub 2} and thiosulfate coupled to H{sub 2} oxidation. To investigate effect of direct microbial reduction of MnO{sub 2} on MnS formation, two MR-1 mutants defective in outer membrane c-type cytochromes ({Delta}mtrC/{Delta}omcA and {Delta}mtrC/{Delta}omcA/{Delta}mtrF) were also used and it was determined that direct reduction of MnO{sub 2} was dominant relative to chemical reduction by biogenic sulfide generated from thiosulfate reduction. Although bicarbonate was excluded from the medium, incubations of strain MR-1 with lactate as the electron donor produced MnCO{sub 3} (rhodochrosite) as well as MnS in nearly equivalent amounts as estimated by micro X-ray diffraction (micro-XRD) analysis. It was concluded that carbonate released from lactate metabolism promoted MnCO{sub 3} formation and that Mn(II) mineralogy was strongly affected by carbonate ions even in the presence of abundant sulfide and weakly alkaline conditions expected to favor the precipitation of MnS. Formation of MnS, as determined by a combination of micro-XRD, transmission electron microscopy, energy dispersive X-ray spectroscopy, and selected area electron diffraction analyses was consistent with equilibrium speciation modeling predictions. Biogenic manganese sulfide may be a manganese sink in the Mn biogeochemical cycle in select environments such as deep anoxic marine basins within the Baltic Sea.

Lee, Ji-Hoon; Kennedy, David W.; Dohnalkova, Alice; Moore, Dean A.; Nachimuthu, Ponnusamy; Reed, Samantha B.; Fredrickson, Jim K.

2011-12-13T23:59:59.000Z

64

Gated strip proportional detector  

DOE Patents (OSTI)

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10/sup 6/. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Morris, C.L.; Idzorek, G.C.; Atencio, L.G.

1985-02-19T23:59:59.000Z

65

Gated strip proportional detector  

DOE Patents (OSTI)

A gated strip proportional detector includes a gas tight chamber which encloses a solid ground plane, a wire anode plane, a wire gating plane, and a multiconductor cathode plane. The anode plane amplifies the amount of charge deposited in the chamber by a factor of up to 10.sup.6. The gating plane allows only charge within a narrow strip to reach the cathode. The cathode plane collects the charge allowed to pass through the gating plane on a set of conductors perpendicular to the open-gated region. By scanning the open-gated region across the chamber and reading out the charge collected on the cathode conductors after a suitable integration time for each location of the gate, a two-dimensional image of the intensity of the ionizing radiation incident on the detector can be made.

Morris, Christopher L. (Los Alamos, NM); Idzorek, George C. (Los Alamos, NM); Atencio, Leroy G. (Espanola, NM)

1987-01-01T23:59:59.000Z

66

Thermally oxidized formation of new Ge dots over as-grown Ge dots in the Si capping layer  

Science Conference Proceedings (OSTI)

A Si-capped Ge quantum dot sample was self-assembly grown via Stranski-Krastanov mode in a molecular beam epitaxy system with the Si capping layer deposited at 300 deg. C. After annealing the sample in an oxygen atmosphere at 1000 deg. C, a structure, namely two layers of quantum dots, was formed with the newly formed Ge-rich quantum dots embedded in the oxidized matrix with the position accurately located upon the as-grown quantum dots. It has been found that the formation of such nanostructures strongly depends upon the growth temperature and oxygen atmosphere. A growth mechanism was proposed to explain the formation of the nanostructure based on the Ge diffusion from the as-grown quantum dots, Ge segregation from the growing oxide, and subsequent migration/agglomeration.

Nie Tianxiao [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Lin Jinhui; Shao Yuanmin; Wu Yueqin; Yang Xinju; Fan Yongliang; Jiang Zuimin [State Key Laboratory of Surface Physics, Fudan University, Shanghai 200433 (China); Chen Zhigang [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Zou Jin [Materials Engineering, University of Queensland, Brisbane, Queensland QLD 4072 (Australia); Centre for Microscopy and Microanalysis, University of Queensland, Brisbane, Queensland QLD 4072 (Australia)

2011-12-01T23:59:59.000Z

67

SiC MOSFETs with thermally oxidized Ta2Si stacked on SiO2 as high-k gate insulator  

Science Conference Proceedings (OSTI)

In this paper, we compare the electrical characteristics of MOS capacitors and lateral MOSFETs with oxidized Ta"2Si (O-Ta"2Si) as a high-k dielectric on silicon carbide or stacked on thermally grown SiO"2 on SiC. MOS capacitors are used to determine ... Keywords: High-k dielectric, MOSFET, Oxidation, SiC, Ta2Si, Tantalum silicide

A. Prez-Toms; M. R. Jennings; P. M. Gammon; G. J. Roberts; P. A. Mawby; J. Milln; P. Godignon; J. Montserrat; N. Mestres

2008-04-01T23:59:59.000Z

68

Evaluation of Solid Oxide Fuel Cell Interconnect Coatings: Reaction Layer Microstructure, Chemistry and Formation Mechanisms.  

E-Print Network (OSTI)

?? The implementation of improved electrolyte materials have led to modern solid oxide fuel cells (SOFCs) which operate at lower temperatures (600-800 C) than previously (more)

Magdefrau, Neal J.

2013-01-01T23:59:59.000Z

69

Photoactivation of the processes of formation of nanostructures by local anodic oxidation of a titanium film  

Science Conference Proceedings (OSTI)

Experimental results on the conditions of activation of probe nanolithography of a thin titanium film by means of local anodic oxidation are reported. It is established that ultraviolet stimulation reduces the geometric dimensions of nanometric oxide structures. The stimulation is accompanied by an increase in the amplitude and duration of the threshold voltage pulse, correspondingly, from 6 to 7 V and from 50 to 100 ms at the relative humidity 50%. The experimental data on the effect of the cantilever coating material and substrate temperature on the geometric dimensions of nanometric oxide structures are reported.

Ageev, O. A.; Alyab'eva, N. I.; Konoplev, B. G., E-mail: kbg@tsure.ru; Polyakov, V. V.; Smirnov, V. A. [Southern Federal University, Taganrog Institute of Technology (Russian Federation)

2010-12-15T23:59:59.000Z

70

Deep Frying: Chemistry, Nutrition and Practical ApplicationsChapter 6 Formation and Analysis of Oxidized Monomeric, Dimeric, and Higher Oligomeric Triglycerides  

Science Conference Proceedings (OSTI)

Deep Frying: Chemistry, Nutrition and Practical Applications Chapter 6 Formation and Analysis of Oxidized Monomeric, Dimeric, and Higher Oligomeric Triglycerides Food Science Health Nutrition Biochemistry eChapters Food Science & Techn

71

Deep Frying: Chemistry, Nutrition and Practical ApplicationsChapter 7 Formation, Analysis, and Health Effects of Oxidized Sterols in Frying Fat  

Science Conference Proceedings (OSTI)

Deep Frying: Chemistry, Nutrition and Practical Applications Chapter 7 Formation, Analysis, and Health Effects of Oxidized Sterols in Frying Fat Food Science Health Nutrition Biochemistry eChapters Food Science & Technology Health - N

72

Optical NAND gate  

DOE Patents (OSTI)

An optical NAND gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator and a photodetector. One pair of the optical waveguide devices is electrically connected in parallel to operate as an optical AND gate; and the other pair of the optical waveguide devices is connected in series to operate as an optical NOT gate (i.e. an optical inverter). The optical NAND gate utilizes two digital optical inputs and a continuous light input to provide a NAND function output. The optical NAND gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Skogen, Erik J. (Albuquerque, NM); Raring, James (Goleta, CA); Tauke-Pedretti, Anna (Albuquerque, NM)

2011-08-09T23:59:59.000Z

73

Structure formation upon reactive direct current magnetron sputtering of transition metal oxide films  

Science Conference Proceedings (OSTI)

A comparative study of reactive direct current magnetron sputtering for different transition metal oxides reveals crystalline films at room temperature for group 4 and amorphous films for groups 5 and 6. This observation cannot be explained by the known growth laws and is attributed to the impact of energetic particles, originating from the oxidized target, on the growing film. This scenario is supported by measured target characteristics, the evolution of deposition stress of the films, and the observed backsputtering.

Ngaruiya, J.M.; Kappertz, O.; Mohamed, S.H.; Wuttig, M. [I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen, Germany and Jomo Kenyatta University of Agriculture and Technology, Box 62000 Nairobi (Kenya); I. Physikalisches Institut der RWTH Aachen, D-52056 Aachen (Germany)

2004-08-02T23:59:59.000Z

74

Quantitative X-ray microanalysis of submicron carbide formation in chromium (III) oxide rich scale  

SciTech Connect

This paper discusses the chemical microanalysis techniques adapted to identify the precipitates that form on the surface of, or within, the oxide scale of a Fe-22Cr ferritic steel during exposure to a carbon-monoxide rich environment at 750C for 800 hours. Examination of oxidized test coupons revealed the presence of a fiber like structure at the surface, shown in figure 1. Other studies have reported that these structures are carbon precipitates.

Collins, W.K.; Ziomek-Moroz, M.; Holcomb, G.R.; Danielson, P.; Hunt, A.H

2007-08-01T23:59:59.000Z

75

Reactive magnetron sputtering of Cu{sub 2}O: Dependence on oxygen pressure and interface formation with indium tin oxide  

SciTech Connect

Thin films of copper oxides were prepared by reactive magnetron sputtering and structural, morphological, chemical, and electronic properties were analyzed using x-ray diffraction, atomic force microscopy, in situ photoelectron spectroscopy, and electrical resistance measurements. The deposition conditions for preparation of Cu(I)-oxide (Cu{sub 2}O) are identified. In addition, the interface formation between Cu{sub 2}O and Sn-doped In{sub 2}O{sub 3} (ITO) was studied by stepwise deposition of Cu{sub 2}O onto ITO and vice versa. A type II (staggered) band alignment with a valence band offset {Delta}E{sub VB} 2.1-2.6 eV depending on interface preparation is observed. The band alignment explains the nonrectifying behavior of p-Cu{sub 2}O/n-ITO junctions, which have been investigated for thin film solar cells.

Deuermeier, Jonas; Gassmann, Juergen; Broetz, Joachim; Klein, Andreas [Technische Universitaet Darmstadt, Fachbereich Material- und Geowissenschaften, Petersenstrasse 32, D-64287 (Germany)

2011-06-01T23:59:59.000Z

76

UThPbREE systematics of organic-rich shales from the ca. 2.15 Ga Sengoma Argillite Formation, Botswana: Evidence for oxidative continental weathering during  

E-Print Network (OSTI)

U­Th­Pb­REE systematics of organic-rich shales from the ca. 2.15 Ga Sengoma Argillite Formation contains organic-rich shales deposited during the Great Oxidation Event. The slope of the 207 Pb/204 Pb­206 Pb/204 Pb array of shales from the Sengoma Argillite Formation corresponds to a Pb­Pb age

Bekker, Andrey

77

Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation  

Science Conference Proceedings (OSTI)

Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

X Teng; W Du; D Su; Q Wang; A Frenkel

2011-12-31T23:59:59.000Z

78

Formation of NiGe through germanium oxide on Ge(001) substrate  

Science Conference Proceedings (OSTI)

Germanium based devices are of interest due to their performance potential. The use of germanium as source and drain requires low resistance access achieved by the formation of germanide (metal-germanium compound). The nickel mono-germanide (NiGe) is ...

F. Nemouchi, V. Carron, J. L. LBR, L. Vandroux, Y. Morand, T. Morel, J. P. Barnes

2013-07-01T23:59:59.000Z

79

Aromatics oxidation and soot formation in flames. Progress report for year beginning 15 August 1988  

SciTech Connect

Work during this contract period has been concerned with the mechanisms through which aromatics are formed and destroyed in flames, and the processes responsible for soot formation. Recent progress has been primarily in two areas: experiments and modeling of the soot nucleation process in low pressure benzene flames and preparation for experiments on the destruction mechanisms of benzene. In addition, we have incorporated ``weak collision`` formalisms into a fall-off computer code.

Howard, J.B.

1989-12-31T23:59:59.000Z

80

Fundamental Studies of Irradiation-Induced Defect Formation and Fission Product Dynamics in Oxide Fuels  

Science Conference Proceedings (OSTI)

The objective of this research program is to address major nuclear fuels performance issues for the design and use of oxide-type fuels in the current and advanced nuclear reactor applications. Fuel performance is a major issue for extending fuel burn-up which has the added advantage of reducing the used fuel waste stream. It will also be a significant issue with respect to developing advanced fuel cycle processes where it may be possible to incorporate minor actinides in various fuel forms so that they can be 'burned' rather than join the used fuel waste stream. The potential to fission or transmute minor actinides and certain long-lived fission product isotopes would transform the high level waste storage strategy by removing the need to consider fuel storage on the millennium time scale.

Stubbins, James

2012-12-19T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


81

Mixture Preparation and Nitric Oxide Formation in a GDI Engine studied by Combined Laser Diagnostics and Numerical Modeling  

DOE Green Energy (OSTI)

Through the combination of advanced imaging laser diagnostics with multi-dimensional computer models, a new understanding of the performance of direct-injection gasoline engines is pursuit. The work focuses on the fuel injection process, the breakup of the liquid into a fine spray and the mixing of the fuel with the in-cylinder gases. Non-intrusive laser diagnostics will be used to measure the spatial distribution of droplets and vaporized fuel with very high temporal resolution. These data along with temperature measurements will be used to validate a new spray breakup model for gasoline direct-injection. Experimental data on near wall fuel distributions will be used for comparison with a model that predicts the spray-wall interaction and the dynamics of the liquid film on the surface. Quantitative measurements of local nitric oxide concentrations inside the combustion chamber will provide a critical test for a numerical simulation of the nitric oxide formation process. This model is based on a modified flamelet approach and will be used to study the effects of exhaust gas recirculation.

Volker Sick; Dennis N. Assanis

2002-11-27T23:59:59.000Z

82

Text Processing with GATE  

Science Conference Proceedings (OSTI)

GATE is a free open-source infrastructure for developing and deploying software components that process human language. It is more than 15 years old and is in active use for all types of computational tasks involving language (frequently called natural ...

Hamish Cunningham; Diana Maynard; Kalina Bontcheva

2011-04-01T23:59:59.000Z

83

Dual-K Versus Dual-T Technique for Gate Leakage Reduction: A Comparative Perspective  

Science Conference Proceedings (OSTI)

As a result of aggressive technology scaling, gate leakage (gate oxide direct tunneling) has become a major component of total power dissipation. Use of dielectrics of higher permittivity (Dual-K) or use of silicon dioxide of higher thicknesses (Dual-T ...

Saraju P. Mohanty; Ramakrishna Velagapudi; Elias Kougianos

2006-03-01T23:59:59.000Z

84

P1-15: Gating System Optimisation Design Study of a Cast ...  

Science Conference Proceedings (OSTI)

Different designs of the gating and risering systems for the cast automobile ... P1- 04: 3D Microstructural Characterization of Uranium Oxide as a Surrogate Nuclear ... P2-27: Characterization of Carbonate Rocks through X-ray Microtomography.

85

Studies of Scale Formation and Kinetics of Crofer 22 APU and Haynes 230 in Carbon Oxide-Containing Environment for SOFC Applications  

DOE Green Energy (OSTI)

Significant progress in reducing the operating temperature of SOFCs below 800oC may allow the use of chromia-forming metallic interconnects at a substantial cost savings. Hydrogen is the main fuel for all types of fuel cells except direct methanol fuel cells. Hydrogen can be generated from fossil fuels, including coal, natural gas, diesel, gasoline, other hydrocarbons, and oxygenates (e.g., methanol, ethanol, butanol, etc.). Carbon oxides present in the hydrogen fuel can cause significant performance problems due to carbon formation (coking). Also, literature data indicate that in CO/CO2 gaseous environments, metallic materials that gain their corrosion resistance due to formation of Cr2O3, could form stable chromium carbides. The chromium carbide formation causes depletion of chromium in these alloys. If the carbides oxidize, they form non-protective scales. Considering a potential detrimental effect of carbon oxides on iron- and nickel-base alloy stability, determining corrosion performance of metallic interconnect candidates in carbon oxide-containing environments at SOFC operating temperatures is a must. In this research, the corrosion behavior of Crofer 22 APU and Haynes 230 was studied in a CO-rich atmosphere at 750C. Chemical composition of the gaseous environment at the outlet was determined using gas chromatography (GC). After 800 h of exposure to the gaseous environment the surfaces of the corroded samples were studied by scanning electron microscopy (SEM) equipped with microanalytical capabilities. X-ray diffraction (XRD) analysis was also used in this study.

Ziomek-Moroz, M.; Covino, B.S., Jr.; Holcomb, G.R.; Bullard, S.J.; Penner, L.R.

2006-01-01T23:59:59.000Z

86

Compact gate valve  

DOE Patents (OSTI)

This invention relates to a double-disc gate valve which is compact, comparatively simple to construct, and capable of maintaining high closing pressures on the valve discs with low frictional forces. The valve casing includes axially aligned ports. Mounted in the casing is a sealed chamber which is pivotable transversely of the axis of the ports. The chamber contains the levers for moving the valve discs axially, and an actuator for the levers. When an external drive means pivots the chamber to a position where the discs are between the ports and axially aligned therewith, the actuator for the levers is energized to move the discs into sealing engagement with the ports.

Bobo, Gerald E. (Knoxville, TN)

1977-01-01T23:59:59.000Z

87

Penn State DOE GATE Program  

DOE Green Energy (OSTI)

The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

Anstrom, Joel

2012-08-31T23:59:59.000Z

88

Accelerated Publication: Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric  

Science Conference Proceedings (OSTI)

Accumulation-type GaN metal-oxide-semiconductor field-effect-transistors (MOSFET's) with atomic-layer-deposited HfO"2 gate dielectrics have been fabricated; a 4@mm gate-length device with a gate dielectric of 14.8nm in thickness (an equivalent SiO"2 ... Keywords: Atomic layer deposition (ALD), Current collapse, GaN, HfO2, Metal-oxide-semiconductor field-effect-transistor (MOSFET)

Y. C. Chang; W. H. Chang; Y. H. Chang; J. Kwo; Y. S. Lin; S. H. Hsu; J. M. Hong; C. C. Tsai; M. Hong

2010-11-01T23:59:59.000Z

89

Effect of Uranium Oxidation State and Sintering Atmosphere on Phase Formation of the Ceramic Wasteform for Plutonium  

SciTech Connect

'This paper discusses the effects of various sources of uranium oxide on the mineralogy and density of the baseline composition (AO) targeted for plutonium immobilization.'

Pareizs, J.M.

1999-07-22T23:59:59.000Z

90

Formation of {open_quotes}metal wool{close_quotes} structures and dynamics of catalytic etching of platinum surfaces during ammonia oxidation  

SciTech Connect

Reconstruction of a clean surface of a platinum catalyst and a platinum surface covered with gold during ammonia oxidation was studied by SEM observations. It was found that the process of catalytic etching had two sequential stages in which different crystal structures with different rates of growth formed on the surface. The first stage was the formation of parallel facets, and the second stage was the formation of individual microcrystals with perfect crystal faces. It was also found that the second state had a threshold character, beginning after some delay from the start of the reaction. A structure resembling metal wool and consisting of interlaced platinum filaments was found to form on the surface of gold-covered platinum catalysts. Characteristic features of this structure`s development are reported. The growth of filaments is attributed to the vapor-liquid-solid mechanism of whisker growth. On the basis of the observed platinum whisker formation and behavior during ammonia oxidation, a mechanism of catalyst surface reconstruction that explains observed characteristic features of the process of catalytic etching is proposed. 25 refs., 8 figs.

Lyubovsky, M.R.; Barelko, V.V. [Institute of Chemical Physics in Chernogolovka, Moscow (Russian Federation)] [Institute of Chemical Physics in Chernogolovka, Moscow (Russian Federation)

1994-09-01T23:59:59.000Z

91

Gate Solar | Open Energy Information  

Open Energy Info (EERE)

Sector Solar Product JV set up for the promotion, exploitation and sale of photovoltaic solar power plants. References Gate Solar1 LinkedIn Connections CrunchBase Profile No...

92

from Microsoft's Bill Gates. Summer  

NLE Websites -- All DOE Office Websites (Extended Search)

Power surge (page 2) Developing fuel for next- generation nuclear reactors, with backing from Microsoft's Bill Gates. Summer fun (pages 4-5) All aboard a bus or train and tour Y-12...

93

Device performance of in situ steam generated gate dielectric nitrided by remote plasma nitridation  

Science Conference Proceedings (OSTI)

In situ steam generated (ISSG) oxides have recently attracted interest for use as gate dielectrics because of their demonstrated reliability improvement over oxides formed by dry oxidation. [G. Minor, G. Xing, H. S. Joo, E. Sanchez, Y. Yokota, C. Chen, D. Lopes, and A. Balakrishna, Electrochem. Soc. Symp. Proc. 99-10, 3 (1999); T. Y. Luo, H. N. Al-Shareef, G. A. Brown, M. Laughery, V. Watt, A. Karamcheti, M. D. Jackson, and H. R. Huff, Proc. SPIE 4181, 220 (2000).] We show in this letter that nitridation of ISSG oxide using a remote plasma decreases the gate leakage current of ISSG oxide by an order of magnitude without significantly degrading transistor performance. In particular, it is shown that the peak normalized transconductance of n-channel devices with an ISSG oxide gate dielectric decreases by only 4% and the normalized drive current by only 3% after remote plasma nitridation (RPN). In addition, it is shown that the reliability of the ISSG oxide exhibits only a small degradation after RPN. These observations suggest that the ISSG/RPN process holds promise for gate dielectric applications. {copyright} 2001 American Institute of Physics.

Al-Shareef, H. N.; Karamcheti, A.; Luo, T. Y.; Bersuker, G.; Brown, G. A.; Murto, R. W.; Jackson, M. D.; Huff, H. R.; Kraus, P.; Lopes, D. (and others)

2001-06-11T23:59:59.000Z

94

Randomized Benchmarking of Quantum Gates  

E-Print Network (OSTI)

A key requirement for scalable quantum computing is that elementary quantum gates can be implemented with sufficiently low error. One method for determining the error behavior of a gate implementation is to perform process tomography. However, standard process tomography is limited by errors in state preparation, measurement and one-qubit gates. It suffers from inefficient scaling with number of qubits and does not detect adverse error-compounding when gates are composed in long sequences. An additional problem is due to the fact that desirable error probabilities for scalable quantum computing are of the order of 0.0001 or lower. Experimentally proving such low errors is challenging. We describe a randomized benchmarking method that yields estimates of the computationally relevant errors without relying on accurate state preparation and measurement. Since it involves long sequences of randomly chosen gates, it also verifies that error behavior is stable when used in long computations. We implemented randomized benchmarking on trapped atomic ion qubits, establishing a one-qubit error probability per randomized pi/2 pulse of 0.00482(17) in a particular experiment. We expect this error probability to be readily improved with straightforward technical modifications.

E. Knill; D. Leibfried; R. Reichle; J. Britton; R. B. Blakestad; J. D. Jost; C. Langer; R. Ozeri; S. Seidelin; D. J. Wineland

2007-07-06T23:59:59.000Z

95

Analysis of the effect of transverse power distribution in an involute fuel plate with and without oxide film formation.  

Science Conference Proceedings (OSTI)

Existing thermal hydraulics computer codes can account for variations in power and temperature in the axial and thickness directions but variations across the width of the plate cannot be accounted for. In the case of fuel plates in an annular core this can lead to significant errors which are accentuated by the presence of an oxide layer that builds up on the aluminum cladding with burnup. This paper uses a three dimensional SINDA model to account for the transverse variations in power. The effect of oxide thickness on these differences is studied in detail. Power distribution and fuel conductivity are also considered. The lower temperatures predicted with the SINDA model result in a greater margin to clad and fuel damage.

Smith, R. S.

1998-10-27T23:59:59.000Z

96

Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy  

Science Conference Proceedings (OSTI)

Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki [School of Health Sciences, Purdue University, West Lafayette, Indiana 47907 (United States); Purdue School of Engineering Technology, IUPUI, Indianapolis, Indiana 46202 (United States); Hokkaido University School of Medicine, Sapporo, 060-8638 (Japan)

2011-04-15T23:59:59.000Z

97

GaSb molecular beam epitaxial growth on p-InP(001) and passivation with in situ deposited Al{sub 2}O{sub 3} gate oxide  

SciTech Connect

The integration of high carrier mobility materials into future CMOS generations is presently being studied in order to increase drive current capability and to decrease power consumption in future generation CMOS devices. If III-V materials are the candidates of choice for n-type channel devices, antimonide-based semiconductors present high hole mobility and could be used for p-type channel devices. In this work we first demonstrate the heteroepitaxy of fully relaxed GaSb epilayers on InP(001) substrates. In a second part, the properties of the Al{sub 2}O{sub 3}/GaSb interface have been studied by in situ deposition of an Al{sub 2}O{sub 3} high-{kappa} gate dielectric. The interface is abrupt without any substantial interfacial layer, and is characterized by high conduction and valence band offsets. Finally, MOS capacitors show well-behaved C-V with relatively low D{sub it} along the bandgap, these results point out an efficient electrical passivation of the Al{sub 2}O{sub 3}/GaSb interface.

Merckling, C.; Brammertz, G.; Hoffmann, T. Y.; Caymax, M.; Dekoster, J. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Sun, X. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520-8284 (United States); Alian, A.; Heyns, M. [Interuniversity Microelectronics Center (IMEC vzw), Kapeldreef 75, 3001, Leuven (Belgium); Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium); Afanas'ev, V. V. [Katholieke Universiteit Leuven, Celestijnelaan 200D, 3001, Leuven (Belgium)

2011-04-01T23:59:59.000Z

98

Gate fidelity of arbitrary single-qubit gates constrained by conservation laws  

E-Print Network (OSTI)

Recent investigations show that conservation laws limit the accuracy of gate operations in quantum computing. The inevitable error under the angular momentum conservation law has been evaluated so far for the CNOT, Hadamard, and NOT gates for spin 1/2 qubits, while the SWAP gate has no constraint. Here, we extend the above results to general single-qubit gates. We obtain an upper bound of the gate fidelity of arbitrary single-qubit gates implemented under arbitrary conservation laws, determined by the geometry of the conservation law and the gate operation on the Bloch sphere as well as the size of the ancilla.

Tokishiro Karasawa; Julio Gea-Banacloche; Masanao Ozawa

2008-09-18T23:59:59.000Z

99

Study of scale formation on AISI 316L in simulated solid oxide fuel cell bi-polar environments  

Science Conference Proceedings (OSTI)

Significant progress made towards reducing the operating temperature of solid oxide fuel cells (SOFC) from {approx}1000 C to {approx}600 C is expected to permit the use of metallic materials with substantial cost reduction. One of the components in a SOFC stack to be made of metallic materials is a bipolar separator, also called an interconnect. It provides electrical connection between individual cells and serves as a gas separator to prevent mixing of the fuel and air. At operating temperature, the material selected for interconnects should possess good chemical and mechanical stability in complex fuel and oxidant gaseous environments, good electrical conductivity, and a coefficient of thermal expansion (CTE) that matches that of the cathode, anode, and electrolyte components. Cr2O3 scale-forming alloys appear to be the most promising candidates. There appears to be a mechanism whereby the environment on the fuel side of a stainless steel interconnect changes the corrosion behavior of the metal on the air side. The corrosion behavior of 316L stainless steel simultaneously exposed to air on one side and H2+3%H2O on the other at 907 K was studied using X-ray diffraction (XRD) and Raman spectroscopy. The electrical property of the investigated material was determined in terms of area-specific resistance (ASR). The chemical and electrical properties of 316L exposed to a dual environment of air/ (H2+H2O) were compared to those of 316L exposed to a single environment of air/air.

Ziomek-Moroz, M.; Covino, Bernard S., Jr.; Cramer, Stephen D.; Holcomb, Gordon R.; Bullard, Sophie J.; Singh (PNNL), P.; Windisch, C.F., Jr. (PNNL)

2004-01-01T23:59:59.000Z

100

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


101

Graduate Automotive Technology Education (GATE) Initiative Awards |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards Graduate Automotive Technology Education (GATE) Initiative Awards September 8, 2011 - 11:46am Addthis Graduate Automotive Technology Education (GATE) Initiative Awards DOE's Graduate Automotive Technology Education (GATE) initiative will award $6.4 million over the course of five years to support seven Centers of Excellence at American colleges, universities, and university-affiliated research institutions. The awardees will focus on three critical automotive technology areas: hybrid propulsion, energy storage, and lightweight materials. By funding curriculum development and expansion as well as laboratory work, GATE allows higher education institutions to develop multidisciplinary training. As a result, GATE promotes the development of a

102

Formation Kinetics of Nitric Oxide of Biodiesel Relative to Petroleum Diesel under Comparable Oxygen Equivalence Ratio in a Homogeneous Reactor  

E-Print Network (OSTI)

Interest in biodiesel has piqued with advent of stringent emissions regulations. Biodiesel is a viable substitute for petroleum diesel because biodiesel produces significantly lower particulate and soot emissions relative to petroleum diesel. Higher nitric oxide (NO) emissions for biodiesel, however, are of primary concern in biodiesel-fueled engines. Search for an in-cylinder technique to reduce NO emissions for biodiesel has motivated studies to gain an improved understanding of fundamental factors that drive increase in NO emissions with biodiesel. Potential factors include fuel-bound oxygen, fuel-bound nitrogen and post-flame gas temperature. The role of fuel-bound oxygen however is debated in the literature. The research objective of this study is to computationally determine if biodiesel and petroleum diesel yield equivalent concentrations of NO with the same oxygen equivalence ratio in a 0-D homogeneous reactor, to explain the role of fuel-bound oxygen in biodiesel on increases in NO emissions with biodiesel. The results from this study indicate that the biodiesel surrogate yields higher NO emissions than the n-heptane because of its lower oxygen consumption efficiency. The lower oxygen consumption efficiency for biodiesel is likely because of the slower decomposition of the individual components and the blending ratios of the biodiesel surrogate blend. The relative differences in combustion efficiency of individual components of the biodiesel blend suggest this conclusion. The more efficient burning of the methyl esters relative to the n-heptane in biodiesel surrogate perhaps indicates the favorable role of fuel-bound oxygen in the fuels combustion. The low utilization of oxygen by the biodiesel surrogate could not be explained in this study. The dominance of NO2 H ? NO OH and N NO ? N2 O mechanisms during biodiesel combustion however explain the high NO emissions for the biodiesel surrogate relative to the n-heptane. The biodiesel may yield lower NO emissions than the petroleum diesel if the blending ratios for the biodiesel are adjusted such that combustion efficiency of biodiesel and petroleum diesel is same or the NO2 H ? NO OH and N NO ? N2 O mechanisms are suppressed during biodiesel combustion.

Rathore, Gurlovleen K.

2010-08-01T23:59:59.000Z

103

Influence of post deposition annealing on Y2O3-gated GaAs MOS capacitors and their reliability issues  

Science Conference Proceedings (OSTI)

The feasibility of employing yttrium oxide (Y"2O"3) as high-k gate dielectrics for GaAs metal-oxide-semiconductor (MOS) devices has been investigated. MOS capacitors were fabricated using RF-sputtered deposited Y"2O"3 films on NH"4OH treated n-GaAs substrate. ... Keywords: GaAs, TDDB, Trapping centroid, Y2O3

P. S. Das; A. Biswas

2011-03-01T23:59:59.000Z

104

Impact of elliptical cross-section on the propagation delay of multi-channel gate-all-around MOSFET based inverters  

Science Conference Proceedings (OSTI)

Multi-channel (MC) gate-all-around (GAA) metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the promising candidates for the next-generation high performance devices. However, due to fabrication imperfections the cross-section of GAA ... Keywords: Effective diameter, Gate-all-around (GAA), Metal-oxide-semiconductor field-effect transistor (MOSFET), Multi-channel, Propagation delay, Scaling

Subindu Kumar, Shankaranand Jha

2013-09-01T23:59:59.000Z

105

Timing driven power gating in high-level synthesis  

Science Conference Proceedings (OSTI)

The power gating technique is useful in reducing standby leakage current, but it increases the gate delay. For a functional unit, its maximum allowable delay (for a target clock period) limits the smallest standby leakage current its power gating can ...

Shih-Hsu Huang; Chun-Hua Cheng

2009-01-01T23:59:59.000Z

106

Robust gate sizing by geometric programming  

Science Conference Proceedings (OSTI)

We present an efficient optimization scheme for gate sizing in the presence of process variations. Using a posynomial delay model, the delay constraints are modified to incorporate uncertainty in the transistor widths and effective channel lengths due ... Keywords: gate sizing, geometric program, optimization, posynomial, uncertainty ellipsoid

Jaskirat Singh; Vidyasagar Nookala; Zhi-Quan Luo; Sachin Sapatnekar

2005-06-01T23:59:59.000Z

107

Retaining latch for a water pit gate  

DOE Patents (OSTI)

The present invention relates to retaining devices which are used to latch two elements or parts together and, more particularly, to gate latches for use in locking a gate to a wall bracket in a water pit utilized to store or handle hazardous materials. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame.

Beale, A.R.

1996-12-31T23:59:59.000Z

108

Airport Gate Scheduling with Time Windows  

Science Conference Proceedings (OSTI)

In contrast to the existing airport gate assignment studies where flight have fixed schedules, we consider the more realistic situation where flight arrival and departure times can change. Although we minimize walking distances (or travel time) in our ... Keywords: aircraft gate scheduling, memetic algorithm, tabu search

A. Lim; B. Rodrigues; Y. Zhu

2005-09-01T23:59:59.000Z

109

Automatically closing swing gate closure assembly  

DOE Patents (OSTI)

A swing gate closure assembly for nuclear reactor tipoff assembly wherein the swing gate is cammed open by a fuel element or spacer but is reliably closed at a desired closing rate primarily by hydraulic forces in the absence of a fuel charge.

Chang, Shih-Chih (Richland, WA); Schuck, William J. (Richland, WA); Gilmore, Richard F. (Kennewick, WA)

1988-01-01T23:59:59.000Z

110

NMR quantum gate factorization through canonical cosets  

E-Print Network (OSTI)

The block canonical coset decomposition is developed as a universal algorithmic tool to synthesize n-qubit quantum gates out of experimentally realizable NMR elements. The two-, three-, and four-qubit quantum Fourier transformations are worked out as examples. The proposed decomposition bridges the state of the art numerical analysis with NMR quantum gate synthesis.

Renan Cabrera; Denys I. Bondar; Herschel A. Rabitz

2012-10-29T23:59:59.000Z

111

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

112

SPEED CONTROL SYSTEM FOR AN ACCESS GATE - Energy Innovation Portal  

An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first ...

113

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind...

114

Photoreduction of {sup 99}Tc Pertechnetate by Nanometer-Sized Metal Oxides: New Strategies for Formation and Sequestration of Low-Valent Technetium  

Science Conference Proceedings (OSTI)

Technetium-99 ({sup 99}Tc) ({beta}{sup -}{sub max}: 293.7 keV; t{sub 1/2}: 2.1 x 10{sup 5} years) is a byproduct of uranium-235 fission and comprises a large component of radioactive waste. Under aerobic conditions and in a neutral- basic environment, the pertechnetate anion (TcO{sub 4}{sup -}) is stable. TcO{sub 4}{sup -} is very soluble, migrates easily through the environment and does not sorb well onto mineral surfaces, soils or sediments. This study moves forward a new strategy for the reduction of TcO4- and chemical incorporation of the reduced Tc into a metal oxide material. This strategy employs a single material, a polyoxometalate (POM), {alpha}{sub 2}-[P{sub 2}W{sub 17}O{sub 61}]{sup 10-}, that can be photoactivated in the presence of 2-propanol to transfer electrons to TcO{sub 4}{sup -}, and incorporate the reduced Tc covalently into the {alpha}2- framework to form the Tc{sup V}O species, Tc{sup V}O({alpha}{sub 2}-P{sub 2}W{sub 17}O{sub 61}){sup 7-}. This occurs via the formation of an intermediate species that slowly converts to Tc{sup V}O({alpha}{sub 2}-P{sub 2}W{sub 17}O{sub 61}){sup 7-}. EXAFS and XANES analysis and preliminary EPR analysis, suggests that the intermediate consists of a Tc(IV) {alpha}2- species where the Tc is likely bound to only 2 of the 4 W-O oxygen atoms in the {alpha}{sub 2}-[P{sub 2}W{sub 17}O{sub 61}]{sup 10-} defect. This intermediate then oxidizes and converts to the Tc{sup V}O({alpha}{sub 2}-P{sub 2}W{sub 17}O{sub 61}){sup 7-} product. The reduction and incorporation of TcO{sub 4}{sup -} was accomplished in a "one pot" reaction using both sunlight and UV irradiation, and monitored as a function of time using multinuclear NMR and radio TLC. The process was further probed by the "step-wise" generation of reduced {alpha}{sub 2}-P{sub 2}W{sub 17}O{sub 61}{sup 12-} through bulk electrolysis followed by the addition of TcO{sub 4}{sup -}. The reduction and incorporation of ReO{sub 4}{sup -}, as a non-radioactive surrogate for {sup 99}Tc, does not proceed through the intermediate species, and Re{sup V}O is incorporated quickly into the {alpha}{sub 2}-[P{sub 2}W{sub 17}O{sub 61}]{sup 10-} defect. These observations are consistent with the periodic trends of Tc and Re. Specifically, Tc is more easily reduced compared to Re. In addition to serving as models for metal oxides, POMs may also provide a suitable platform to study the molecular level dynamics and mechanisms of the reduction and incorporation of Tc into a material.

Burton-Pye, Benjamin P.; Radivojevic, Ivana; McGregor, Donna; Mbomekalle, Israel M.; Lukens, Jr., Wayne W.; Francesconi, Lynn C.

2011-07-04T23:59:59.000Z

115

Performance and reliability improvement of HfSiON gate dielectrics using chlorine plasma treatment  

Science Conference Proceedings (OSTI)

The effects of chlorine plasma treatment on HfSiON gate dielectrics were investigated with respect to device performance and reliability characteristics. The chlorine plasma treatment was performed on atomic layer deposited HfSiON films to remove the residual carbon content. The optimal chlorine plasma treatment is shown to lower gate leakage current density without increasing equivalent oxide thickness of the gate stack. Secondary ion mass spectroscopy depth profiling showed that the carbon residue in HfSiON was reduced by the chlorine plasma treatment. It is demonstrated that an optimized chlorine plasma treatment improves the transistor I{sub on}-I{sub off} characteristics and reduces negative-bias temperature instability.

Park, Hong Bae; Ju, Byongsun [Samsung Electronics R and D Center (Korea, Republic of); Kang, Chang Yong; Park, Chanro; Park, Chang Seo [SEMATECH, Austin, Texas 78741 (United States); Lee, Byoung Hun [Gwangju Institute of Science and Technology, Gwangju (Korea, Republic of); Kim, Tea Wan; Kim, Beom Seok; Choi, Rino [Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751 (Korea, Republic of)

2009-01-26T23:59:59.000Z

116

Growth of gadolinium oxide films for advanced MOS structure  

Science Conference Proceedings (OSTI)

We have investigated properties of insulating gadolinium oxide (Gd"2O"3) films in connection with the replacement of silicon oxide (SiO"2) gate dielectrics in new generation of CMOS devices. The Gd"2O"3 layers were grown using metal organic chemical ... Keywords: Gadolinium oxide, High-? dielectric, MOCVD, MOS structure

R. Luptk; K. Frhlich; A. Rosov; K. Huekov; M. apajna; D. Machajd?k; M. Jergel; J. P. Espins; C. Mansilla

2005-06-01T23:59:59.000Z

117

Graduate Automotive Technology Education (GATE) Center  

DOE Green Energy (OSTI)

The Graduate Automotive Technology Education (GATE) Center at the University of Tennessee, Knoxville has completed its sixth year of operation. During this period the Center has involved thirteen GATE Fellows and ten GATE Research Assistants in preparing them to contribute to advanced automotive technologies in the center's focus area: hybrid drive trains and control systems. Eighteen GATE students have graduated, and three have completed their course work requirements. Nine faculty members from three departments in the College of Engineering have been involved in the GATE Center. In addition to the impact that the Center has had on the students and faculty involved, the presence of the center has led to the acquisition of resources that probably would not have been obtained if the GATE Center had not existed. Significant industry interaction such as internships, equipment donations, and support for GATE students has been realized. The value of the total resources brought to the university (including related research contracts) exceeds $4,000,000. Problem areas are discussed in the hope that future activities may benefit from the operation of the current program.

Jeffrey Hodgson; David Irick

2005-09-30T23:59:59.000Z

118

Quantum gates and their coexisting geometric phases  

SciTech Connect

Geometric phases arise naturally in a variety of quantum systems with observable consequences. They also arise in quantum computations when dressed states are used in gating operations. Here we show how they arise in these gating operations and how one may take advantage of the dressed states producing them. Specifically, we show that for a given, but arbitrary Hamiltonian, and at an arbitrary time {tau}, there always exists a set of dressed states such that a given gate operation can be performed by the Hamiltonian up to a phase {phi}. The phase is a sum of a dynamical phase and a geometric phase. We illustrate the dressed phase for several systems.

Wu Lianao [Ikerbasque, Basque Foundation for Science, E-48011 Bilbao (Spain); Department of Theoretical Physics and History of Science, Basque Country University (EHU/UPV), P.O. Box 644, E-48080 Bilbao (Spain); Bishop, C. Allen [Physics Department, Southern Illinois University, Carbondale, Illinois 62901-4401 (United States); Byrd, Mark S. [Physics Department, Southern Illinois University, Carbondale, Illinois 62901-4401 (United States); Computer Science Department, Southern Illinois University, Carbondale, Illinois 62901 (United States)

2011-08-15T23:59:59.000Z

119

David A Gates | Princeton Plasma Physics Lab  

NLE Websites -- All DOE Office Websites (Extended Search)

A Gates A Gates Principal Research Physicist, Stellerator Physics Lead, Advanced Projects Division, Science Focus Group Leader for Macroscopic Stability David Gates is a principal research physicist for the advanced projects division of PPPL, and the stellarator physics leader at the Laboratory. In the latter capacity he leads collaborative efforts with the Wendelstein 7-X and Large Helical Device stellarator projects in Germany and Japan, respectively. Gates is first author of more than a dozen research papers, including an April, 2012, paper that proposed a possible solution to a critical barrier to fusion as a source of energy for generating electricity. Interests Collisional energy transport High-frequency Alfvén waves Fast-ion energy transfer Ideal and resistive magneto-hydrodynamic stability

120

Observations and Mechanisms of GATE Waterspouts  

Science Conference Proceedings (OSTI)

The GATE data base for days 261 and 186 is used for a combined observational and numerical investigation of interacting cumulus processes that may be important in the generation of waterspouts. The results suggest that the existence of cumulus-...

Joanne Simpson; Bruce R. Morton; Michael C. McCumber; Richard S. Penc

1986-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


121

Gate potential control of nanofluidic devices  

E-Print Network (OSTI)

The effect of an external gate potential control on the nanofluidic nanochannels was experimentally investigated in this work. Like in the field effect transistors (FET) in microelectronics, molecular transport in ...

Le Coguic, Arnaud

2005-01-01T23:59:59.000Z

122

The GATE Boundary Layer Instrumentation System (BLIS)  

Science Conference Proceedings (OSTI)

A tethered sonde, the Boundary Layer Instrument System (BLIS), was designed for use from shipboard platforms in the GARP Atlantic Tropical Experiment (GATE). This system was able to monitor the thermal and kinematic properties of the boundary ...

Donald P. Wylie; Chester F. Ropelewski

1980-09-01T23:59:59.000Z

123

NBTI-aware power gating design  

Science Conference Proceedings (OSTI)

A header-based power gating structure inserts PMOS as sleep transistors between the power rail and the circuit. Since PMOS sleep transistors in the functional mode are turned-on continuously, Negative Bias Temperature Instability (NBTI) influences the ...

Ming-Chao Lee; Yu-Guang Chen; Ding-Kei Huang; Shih-Chieh Chang

2011-01-01T23:59:59.000Z

124

ESS 2012 Peer Review - Engineered Gate Oxides for Wide Bandgap...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000. SAND No. 2011-XXXXP...

125

Characterization of ALD Beryllium Oxide as a Potential High-? Gate ...  

Science Conference Proceedings (OSTI)

Elements of Power Conversion Integration in Group-III Nitride Heterojunctions Fabrication of PLZT Dielectric Films for Power Inverters in Electric Drive Vehicles.

126

GaTe semiconductor for radiation detection  

SciTech Connect

GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

2009-06-23T23:59:59.000Z

127

Range gated strip proximity sensor  

DOE Patents (OSTI)

A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

McEwan, T.E.

1996-12-03T23:59:59.000Z

128

Range gated strip proximity sensor  

DOE Patents (OSTI)

A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

McEwan, Thomas E. (Livermore, CA)

1996-01-01T23:59:59.000Z

129

Photochemical Oxidant Processes in the Presence of Dust: An Evaluation of the Impact of Dust on Particulate Nitrate and Ozone Formation  

Science Conference Proceedings (OSTI)

The influence of dust on the tropospheric photochemical oxidant cycle is studied through the use of a detailed coupled aerosol and gas-phase chemistry model. Dust is a significant component of the troposphere throughout Asia and provides a ...

Yang Zhang; Young Sunwoo; Veerabhadra Kotamarthi; Gregory R. Carmichael

1994-07-01T23:59:59.000Z

130

FORMATION FIELDS AND CURRENT EFFICIENCIES IN THE ANODIC OXIDATION OF ZIRCONIUM: A DIRECT COMPARISON OF HIGH-POTENTIAL FORMATION FIELDS WITH THOSE DERIVED FROM LOW-POTENTIAL CHARGING CURVES  

SciTech Connect

Formation fields at selected constant currents were obtained from high- potential unitary formation rates and polarographic current efficiency measurements carried out over the potential range, 20 to 130 volts. These values are compared with formation fields derived from low-potential unitary formation rates alone, in the potential range below 2 v. Results are reported for abraded Kroll process metal at 750 mu a/cm/sup 2/, for abraded and for chemically polished iodide process metal at 100 and 750 mu a/cm/sup 2/ and 100 mu a/cm/sup 2/, respectively. Ionic current efficiencies are reported for several current densities in the high-potential range and for the low-potential localized oxygen evolution process. (auth)

Adams, G.B. Jr.; Lee, T.; Van Bysselberghe, P.

1957-01-01T23:59:59.000Z

131

Sliding-gate valve for use with abrasive materials  

DOE Patents (OSTI)

The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

Ayers, Jr., William J. (Morgantown, WV); Carter, Charles R. (Fairmont, WV); Griffith, Richard A. (Morgantown, WV); Loomis, Richard B. (Bruceton Mills, WV); Notestein, John E. (Morgantown, WV)

1985-01-01T23:59:59.000Z

132

Light-induced switching in the back-gated organic transistors with built-in conduction channel  

E-Print Network (OSTI)

We report on observation of a light-induced switching of the conductance in the back-gated organic field-effect transistors (OFETs) with built-in conduction channel. In the studied devices, the built-in channel is formed owing to the self-sensitized photo-oxidation of rubrene surface. In the dark, the back gate controls the charge injection from metal contacts into the built-in channel: the high-current ON state corresponds to zero or negative back-gate voltage; the low-current OFF state - to a positive back-gate voltage that blocks the Schottky contacts. Illumination of the OFET in the OFF state with a short pulse of light switches the device into the ON state that persists in the dark for days. The OFF state can be restored by cycling the back gate voltage. The observed effect can be explained by screening of the back-gate electric field by the charges photo-generated in the bulk of organic semiconductor.

V. Podzorov; V. M. Pudalov; M. E. Gershenson

2004-06-29T23:59:59.000Z

133

Characterizing Quantum Gates via Randomized Benchmarking  

E-Print Network (OSTI)

We describe and expand upon the scalable randomized benchmarking protocol proposed in Phys. Rev. Lett. 106, 180504 (2011) which provides a method for benchmarking quantum gates and estimating the gate-dependence of the noise. The protocol allows the noise to have weak time and gate-dependence, and we provide a sufficient condition for the applicability of the protocol in terms of the average variation of the noise. We discuss how state preparation and measurement errors are taken into account and provide a complete proof of the scalability of the protocol. We establish a connection in special cases between the error rate provided by this protocol and the error strength measured using the diamond norm distance.

Easwar Magesan; Jay M. Gambetta; Joseph Emerson

2011-09-30T23:59:59.000Z

134

Evolving GATE to meet new challenges in language engineering  

Science Conference Proceedings (OSTI)

In this paper we present recent work on GATE, a widely-used framework and graphical development environment for creating and deploying Language Engineering components and resources in a robust fashion. The GATE architecture has facilitated the development ...

Kalina Bontcheva; Valentin Tablan; Diana Maynard; Hamish Cunningham

2004-09-01T23:59:59.000Z

135

Using GATE as an environment for teaching NLP  

Science Conference Proceedings (OSTI)

In this paper we argue that the GATE architecture and visual development environment can be used as an effective tool for teaching language engineering and computational linguistics. Since GATE comes with a customisable and extendable set of components, ...

Kalina Bontcheva; Hamish Cunningham; Valentin Tablan; Diana Maynard; Oana Hamza

2002-07-01T23:59:59.000Z

136

Effect of Oxygen on Ni-Silicided FUSI Metal Gate  

E-Print Network (OSTI)

Continual evolution of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-65 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, H.P.

137

Simulation of multiple-gate quantum stub transistor  

Science Conference Proceedings (OSTI)

The quantum stub transistor has the potential for ultrafast, ultra low power signal processing in high density integrated circuits. However, the single gate stub transistor presents the shortcoming of requiring highly precise gate voltage to close the ... Keywords: multiple gate, simulation, stub transistor

Edval J. P. Santos; Alexandre B. Guerra

2005-08-01T23:59:59.000Z

138

Two methods of realising 10nm T-gate lithography  

Science Conference Proceedings (OSTI)

This paper presents two separate methods for the fabrication of 10nm footprint T-gates using a two-step gate process. We examine the limits of lithographic and pattern transfer processes using the exposure of ZEP520A resist by electron beam lithography, ... Keywords: Electron beam lithography, HEMT, ICP, RIE, Reactive ion etching, T-gate

S. Bentley; X. Li; D. A. J. Moran; I. G. Thayne

2009-04-01T23:59:59.000Z

139

Waves at 200 mb during GATE  

Science Conference Proceedings (OSTI)

A 200 mb data set obtained during the GATE experiment of the 1974 summer for the period 15 June-23 September and covering the global tropics 25S to 45N has been analyzed to determine the presence of certain wave modes in the tropical ...

Colin A. Depradine

1981-05-01T23:59:59.000Z

140

Efficient tiling patterns for reconfigurable gate arrays  

Science Conference Proceedings (OSTI)

In this paper we present a few potentially efficient tiling patterns for gate-array realizations. We start with a brief recapitulation of tiling patterns, and fundamental limits of placement/routing in a two-dimensional plane. We state the first principles ... Keywords: FPGA, hexagonal, octagonal, tiling

Sumanta Chaudhuri; Sylvain Guilley; Philippe Hoogvorst; Jean-Luc Danger

2008-04-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


141

Deep Convection on Day 261 of GATE  

Science Conference Proceedings (OSTI)

Aircraft, radar, satellite and ship data, gathered on 18 September 1974 during GATE, have been brought to bear an clouds of the middle and upper troposphere associated with a cloud cluster occurring near the ridge axis of a 700 mb wave.

C. Warner; J. Simpson; G. Van Helvoirt; D. W. Martin; D. Suchman; G. L. Austin

1980-02-01T23:59:59.000Z

142

Gaussian mixture CPHD filter with gating technique  

Science Conference Proceedings (OSTI)

Cardinalized probability hypothesis density (CPHD) filter provides more accurate estimates of target number than the probability hypothesis density (PHD) filter, and hence, also of the states of targets. This additional capability comes at the price ... Keywords: Finite sets statistics, Gating, Gaussian mixture, Probability hypothesis density, Target tracking

Hongjian Zhang; Zhongliang Jing; Shiqiang Hu

2009-08-01T23:59:59.000Z

143

Quantum process tomography of a controlled-NOT gate  

E-Print Network (OSTI)

We demonstrate complete characterization of a two-qubit entangling process - a linear optics controlled-NOT gate operating with coincident detection - by quantum process tomography. We use maximum-likelihood estimation to convert the experimental data into a physical process matrix. The process matrix allows accurate prediction of the operation of the gate for arbitrary input states, and calculation of gate performance measures such as the average gate fidelity, average purity and entangling capability of our gate, which are 0.90, 0.83 and 0.73, respectively.

J. L. O'Brien; G. J. Pryde; A. Gilchrist; D. F. V. James; N. K. Langford; T. C. Ralph; A. G. White

2004-02-23T23:59:59.000Z

144

Evaluation of hydrogen and ammonia gas mixtures with the suspended- gate field-effect transistor sensor array  

DOE Green Energy (OSTI)

Generation of hydrogen represents a severe industrial hazard primarily because the mixture of hydrogen with air in the ratio 4.0--74.2 vol % is explosive. In some industrial applications, such as waste remediation, hydrogen, as a product of radiolysis and corrosion, occurs in the presence of ammonia, nitrous oxide, water vapor and other molecules. A low cost, reliable method for monitoring these gaseous mixtures is essential. Palladium-based layers have been used successfully as hydrogen sensitive layers in several potentiometric sensors for many years. Since the sensing mechanism is based on the catalytic decomposition of hydrogen molecules, other hydrogen-bearing gases can also produce a response. From this viewpoint, using an array of sensing elements with catalytic and noncatalytic chemically selective layers in these applications can be highly effective. Moreover, integration of this array on a single chip can be routinely achieved. The Suspended Gate Field-Effect Transistor (SGFET) is microfabricated in silicon. The metal gate of the transistor is separated from the substrate by an air gap. The chemically sensitive layer is electrodeposited on the bottom of the suspended gate. Chemical species can penetrate into the gate area and interact with the sensing layer. This interaction modulates the work function of the layer. The change in the work function results in the shift of the transistor threshold voltage. The measured threshold voltage shift is a function of the gas concentration in the sensor vicinity. By passing a small current through the suspended gate, it is possible to control the operating temperature of the sensing layer (up to 200{degrees}C) and, therefore, to modulate the sensor sensitivity, selectivity, response and recovery times. Due to the very low thermal mass, the heat is localized on the gate so that many devices can be operated on a single chip, each with the gate at different temperature.

Domansky, K.; Li, H.S.; Josowicz, M.; Janata, J.

1995-12-01T23:59:59.000Z

145

Atomic and electronic structures of oxides on III-V semiconductors :  

E-Print Network (OSTI)

STM imaging. Subsequently, indium oxide is deposited byIndium Monoxide (In 2 O) Once the surface structure of InAs(001)-(42) was characterized, the gate oxidesIndium I t Tunneling Current LDOS Local Density of States LEED Low Energy Electron Diffraction MBE Molecular Beam Epitaxy MOSFET Metal-Oxide

Shen, Jian

2010-01-01T23:59:59.000Z

146

AgraGate Carbon Credits Corporation | Open Energy Information  

Open Energy Info (EERE)

AgraGate Carbon Credits Corporation AgraGate Carbon Credits Corporation Jump to: navigation, search Name AgraGate Carbon Credits Corporation Place Des Moines, Iowa Zip 50266 Product Offset aggregators that work with American farmers, ranchers, and private forest owners, providing clients with cash flows produced by the sale of credits. Offsets are sold on the Chicago Climate Exchange References AgraGate Carbon Credits Corporation[1] LinkedIn Connections CrunchBase Profile No CrunchBase profile. Create one now! This article is a stub. You can help OpenEI by expanding it. AgraGate Carbon Credits Corporation is a company located in Des Moines, Iowa . References ↑ "AgraGate Carbon Credits Corporation" Retrieved from "http://en.openei.org/w/index.php?title=AgraGate_Carbon_Credits_Corporation&oldid=341882"

147

Gates, Oregon: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gates, Oregon: Energy Resources Gates, Oregon: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 44.7562329°, -122.4167483° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":44.7562329,"lon":-122.4167483,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

148

Fractional diffusion modeling of ion channel gating  

E-Print Network (OSTI)

An anomalous diffusion model for ion channel gating is put forward. This modeling scheme is able to describe the non-exponential, power-law like gating behavior of residence time intervals in several types of ion channels. Our scheme presents a generalization of the discrete diffusion model by Millhauser, Salpeter and Oswald [Proc. Natl. Acad. Sci. USA 85, 1503 (1988)] to the case of a continuous, anomalously slow conformational diffusion. The corresponding generalization is derived from a continuous time random walk composed of nearest neighbor jumps which in the scaling limit results in a fractional diffusion equation. The studied model contains three parameters only: the mean residence time, a characteristic time of conformational diffusion, and the index of subdiffusion. A tractable analytical expression for the characteristic function of the residence time distribution (RTD) is obtained. In the limiting case of normal diffusion a prior result of Goychuk and Hanggi [Proc. Natl. Acad. Sci. USA 99, 3552 (20...

Goychuk, I; Goychuk, Igor; Hanggi, Peter

2004-01-01T23:59:59.000Z

149

Patient training in respiratory-gated radiotherapy  

Science Conference Proceedings (OSTI)

Respiratory gating is used to counter the effects of organ motion during radiotherapy for chest tumors. The effects of variations in patient breathing patterns during a single treatment and from day to day are unknown. We evaluated the feasibility of using patient training tools and their effect on the breathing cycle regularity and reproducibility during respiratory-gated radiotherapy. To monitor respiratory patterns, we used a component of a commercially available respiratory-gated radiotherapy system (Real Time Position Management (RPM) System, Varian Oncology Systems, Palo Alto, CA 94304). This passive marker video tracking system consists of reflective markers placed on the patient's chest or abdomen, which are detected by a wall-mounted video camera. Software installed on a PC interfaced to this camera detects the marker motion digitally and records it. The marker position as a function of time serves as the motion signal that may be used to trigger imaging or treatment. The training tools used were audio prompting and visual feedback, with free breathing as a control. The audio prompting method used instructions to 'breathe in' or 'breathe out' at periodic intervals deduced from patients' own breathing patterns. In the visual feedback method, patients were shown a real-time trace of their abdominal wall motion due to breathing. Using this, they were asked to maintain a constant amplitude of motion. Motion traces of the abdominal wall were recorded for each patient for various maneuvers. Free breathing showed a variable amplitude and frequency. Audio prompting resulted in a reproducible frequency; however, the variability and the magnitude of amplitude increased. Visual feedback gave a better control over the amplitude but showed minor variations in frequency. We concluded that training improves the reproducibility of amplitude and frequency of patient breathing cycles. This may increase the accuracy of respiratory-gated radiation therapy.

Kini, Vijay R.; Vedam, Subrahmanya S.; Keall, Paul J.; Patil, Sumukh; Chen, Clayton; Mohan, Radhe

2003-03-31T23:59:59.000Z

150

The impacts of cation stoichiometry and substrate surface quality on nucleation, structure, defect formation, and intermixing in complex oxide heteroepitaxy LaCrO3 on SrTiO3(001)  

Science Conference Proceedings (OSTI)

Our ability to design and fabricate electronic devices with reproducible properties using complex oxides is critically dependent on our ability to controllably synthesize these materials in thin-film form. Structure-property relationships are intimately tied to film and interface composition Here we report on the effect of cation stoichiometry on structural quality and defect formation in LaCrO3 heteroepitaxial films prepared using molecular beam epitaxy. We calculate from first principles the regions of stability of various candidate defects as a function of Cr and O chemical potential, along with the predicted effects of these defects on structural parameters. We show that epitaxial LaCrO3 films readily nucleate and remain coherently strained on SrTiO3(001) over a wide range of La-to-Cr atom ratios, but that La-rich films are of considerably lower structural quality than stoichiometric and Cr-rich films. Cation imbalances are accompanied by anti-site defect formation, as deduced by comparing experimental trends in the c lattice parameter with those from first-principles calculations. Cation mixing occurs at the interface for all La-to-Cr ratios investigated, and is not quenched by deposition on SrTiO3(001) at ambient temperature. Indiffused La atoms occupy Sr sites, most likely facilitated by Sr vacancy formation in STO resulting from high-temperature oxygen annealing required to prepare the substrate. Intermixing is effectively quenched by using molecular beam epitaxy to deposit LaCrO3 at ambient temperature on defect free Si(001). However, analogous pulsed laser deposition on Si is accompanied by cation mixing.

Qiao, Liang [ORNL; Zhang, K. H. L [Pacific Northwest National Laboratory (PNNL); Bowden, Mark E [Pacific Northwest National Laboratory (PNNL); Varga, Tamas [Pacific Northwest National Laboratory (PNNL); Shutthanandan, Vaithiyalingam [Pacific Northwest National Laboratory (PNNL); Colby, Robert [Pacific Northwest National Laboratory (PNNL); Du, Yingge [Pacific Northwest National Laboratory (PNNL); Kabius, Bernd [Pacific Northwest National Laboratory (PNNL); Sushko, Peter V [University College, London; Biegalski, Michael D [ORNL; Chambers, S. A. [Pacific Northwest National Laboratory (PNNL)

2013-01-01T23:59:59.000Z

151

All-optical reversible logic gate via adiabatic population transfer  

E-Print Network (OSTI)

The Toffoli gate is an essential logic element, which permits implementation of a reversible processor. It is of relevance both for classical as well as quantum logics. We propose and theoretically study all-optical implementations of three-bit and four-bit Toffoli gates by application of adiabatic population transfer techniques. For a three-bit Toffoli gate we use variants of stimulated Raman adiabatic passage (STIRAP) processes in a $\\Lambda$-type level scheme, driven by two laser pulses at sufficiently large detunings. For the implementation of a four-bit Toffoli gate, we apply reversible adiabatic population transfer in five-level quantum systems, interacting with three laser pulses. We demonstrate correct all-optical implementation of the truth table of three-bit and four-bit Toffoli gates. Moreover, we derive conditions for adiabatic evolution of the population dynamics and robust operation of the gates.

G. Grigoryan; V. Chaltykyan; E. Gazazyan; O. Tikhova; T. Halfmann

2013-06-10T23:59:59.000Z

152

Downhole burner systems and methods for heating subsurface formations  

DOE Patents (OSTI)

A gas burner assembly for heating a subsurface formation includes an oxidant conduit, a fuel conduit, and a plurality of oxidizers coupled to the oxidant conduit. At least one of the oxidizers includes a mix chamber for mixing fuel from the fuel conduit with oxidant from the oxidant conduit, an igniter, and a shield. The shield includes a plurality of openings in communication with the oxidant conduit. At least one flame stabilizer is coupled to the shield.

Farmayan, Walter Farman (Houston, TX); Giles, Steven Paul (Damon, TX); Brignac, Jr., Joseph Phillip (Katy, TX); Munshi, Abdul Wahid (Houston, TX); Abbasi, Faraz (Sugarland, TX); Clomburg, Lloyd Anthony (Houston, TX); Anderson, Karl Gregory (Missouri City, TX); Tsai, Kuochen (Katy, TX); Siddoway, Mark Alan (Katy, TX)

2011-05-31T23:59:59.000Z

153

High fidelity gates in quantum dot spin qubits  

E-Print Network (OSTI)

Several logical qubits and quantum gates have been proposed for semiconductor quantum dots controlled by voltages applied to top gates. Differences between the schemes can make it difficult to compare them meaningfully. Here we develop a theoretical framework to evaluate disparate qubit-gating schemes on an equal footing. We apply the procedure to two types of double-dot qubits: the singlet-triplet (ST) and the semiconducting quantum dot hybrid qubit. We investigate three quantum gates that flip the qubit state: a DC pulsed gate, an AC gate based on logical qubit resonance (LQR), and a gate-like process known as stimulated Raman adiabatic passage (STIRAP). These gates are all mediated by an exchange interaction that depends on a small number of experimental control parameters, including the interdot tunnel coupling $g$ and the detuning $\\epsilon$, which sets the energy difference between the dots. Our procedure has two steps. First, we optimize the gate fidelity ($f$) for fixed $g$ as a function of the other control parameters; this yields an $f^\\text{opt}(g)$ that is universal for different types of gates. Next, we identify physical constraints on the control parameters; this yields an upper bound $f^\\text{max}$ that is specific to the qubit-gate combination. We show that similar gate fidelities ($\\sim 99.5$%) should be attainable for ST qubits in isotopically purified Si, and for hybrid qubits in natural Si. Considerably lower fidelities are obtained for GaAs devices, due to the fluctuating magnetic fields $\\Delta B$ produced by nuclear spins.

Teck Seng Koh; S. N. Coppersmith; Mark Friesen

2013-07-31T23:59:59.000Z

154

Dynamic and short-circuit power of CMOS gates driving lossless transmission lines  

E-Print Network (OSTI)

AbstractThe dynamic and short-circuit power consumption of a complementary metaloxidesemidconductor (CMOS) gate driving an inductancecapacitance (LC) transmission line as a limiting case of an RLC transmission line is investigated in this paper. Closed-form solutions for the output voltage and shortcircuit power of a CMOS gate driving an LC transmission line are presented. A closed form solution for the short-circuit power is also presented. These solutions agree with circuit simulations within 11 % error for a wide range of transistor widths and line impedances for a 0.25-"m CMOS technology. The ratio of the short circuit to dynamic power is shown to be less than 7 % for CMOS gates driving LC transmission lines where the line is matched or underdriven. The total power consumption is expected to decrease as inductance effects becomes more significant as compared to a resistancecapacitance (RC)-dominated interconnect line. Index TermsCMOS, dynamic, interconnect, LC, power dissipation, RC, RLC, short-circuit, transmission lines.

Yehea I. Ismail; Eby G. Friedman; Senior Member; Jose Luis Neves

1999-01-01T23:59:59.000Z

155

CLUSTERING OF CYCLIC-NUCLEOTIDE-GATED CHANNELS IN OLFACTORY CILIA.  

E-Print Network (OSTI)

??Cyclic nucleotide gated (CNG) channels play an important role in mediating sensory signal transduction in olfactory receptor neurons, which takes place primarily in olfactory cilia. (more)

FLANNERY, RICHARD JOHN

2006-01-01T23:59:59.000Z

156

The Difficulty of Gate Control in Molecular Transistors  

E-Print Network (OSTI)

The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi energy they can be linearly shifted by the gate voltage, which is consistent with recent experimental observations [Nature 462, 1039 (2009)]. However, when they move near to the Fermi energy (turn-on process), the shifts become extremely small and almost independent of the gate voltage. The fact that the conductance may be beyond the gate control in the "ON" state will challenge the implementation of molecular transistors.

D. Hou; J. H. Wei

2011-09-27T23:59:59.000Z

157

Gates/filters in Flow Cytometry Data Visualization  

E-Print Network (OSTI)

The flowViz package provides tools for visualization of flow cytometry data. This document describes the support for visualizing gates (a.k.a. filters). 1

unknown authors

2010-01-01T23:59:59.000Z

158

Gates/filters in Flow Cytometry Data Visualization  

E-Print Network (OSTI)

The flowViz package provides tools for visualization of flow cytometry data. This document describes the support for visualizing gates (a.k.a. filters). 1

unknown authors

2012-01-01T23:59:59.000Z

159

Composite Toffoli gate with two-round error detection  

E-Print Network (OSTI)

We introduce a fault-tolerant construction to implement a composite quantum operation of four overlapping Toffoli gates. The same construction can produce two independent Toffoli gates. This result lowers resource overheads in designs for quantum computers by more than an order of magnitude. The procedure uses Clifford operations and 64 copies of the non-Clifford gate $T = \\exp[i \\pi (I - \\sigma^z) /8]$. Quantum codes detect errors in the circuit. When the dominant source of error is $T$-gate failure with probability $p$, then the composite Toffoli circuit has postselected failure rate of $3072p^4$ to lowest order.

Cody Jones

2013-03-27T23:59:59.000Z

160

Speed control system for an access gate  

DOE Patents (OSTI)

An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

Bzorgi, Fariborz M. (Knoxville, TN)

2012-03-20T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


161

Metal atom oxidation laser  

DOE Patents (OSTI)

A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides. (auth)

Jensen, R.J.; Rice, W.W.; Beattie, W.H.

1975-10-28T23:59:59.000Z

162

Metal atom oxidation laser  

DOE Patents (OSTI)

A chemical laser which operates by formation of metal or carbon atoms and reaction of such atoms with a gaseous oxidizer in an optical resonant cavity is described. The lasing species are diatomic or polyatomic in nature and are readily produced by exchange or other abstraction reactions between the metal or carbon atoms and the oxidizer. The lasing molecules may be metal or carbon monohalides or monoxides.

Jensen, R.J.; Rice, W.W.; Beattie, W.H.

1975-10-28T23:59:59.000Z

163

Advanced high-? dielectric stacks with polySi and metal gates: recent progress and current challenges  

Science Conference Proceedings (OSTI)

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-? dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes ...

E. P. Gusev; V. Narayanan; M. M. Frank

2006-07-01T23:59:59.000Z

164

Pulse-dilation enhanced gated optical imager with 5 ps resolution (invited)  

Science Conference Proceedings (OSTI)

A 5 ps gated framing camera was demonstrated using the pulse-dilation of a drifting electron signal. The pulse-dilation is achieved by accelerating a photoelectron derived information pulse with a time varying potential [R. D. Prosser, J. Phys. E 9, 57 (1976)]. The temporal dependence of the accelerating potential causes a birth time dependent axial velocity dispersion that spreads the pulse as it transits a drift region. The expanded pulse is then imaged with a conventional gated microchannel plate based framing camera and the effective gating time of the combined instrument is reduced over that of the framing camera alone. In the drift region, electron image defocusing in the transverse or image plane is prevented with a large axial magnetic field. Details of the unique issues associated with rf excited photocathodes were investigated numerically and a prototype instrument based on this principle was recently constructed. Temporal resolution of the instrument was measured with a frequency tripled femtosecond laser operating at 266 nm. The system demonstrated 20x temporal magnification and the results are presented here. X-ray image formation strategies and photometric calculations for inertial confinement fusion implosion experiments are also examined.

Hilsabeck, T. J.; Kilkenny, J. D. [General Atomics, P.O. Box 85608, San Diego, California 92186-5608 (United States); Hares, J. D.; Dymoke-Bradshaw, A. K. L. [Kentech Instruments Ltd., Wallingford, Oxfordshire OX10 (United Kingdom); Bell, P. M.; Koch, J. A.; Celliers, P. M.; Bradley, D. K.; McCarville, T.; Pivovaroff, M.; Soufli, R.; Bionta, R. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)

2010-10-15T23:59:59.000Z

165

Power gating design for standard-cell-like structured ASICs  

Science Conference Proceedings (OSTI)

Structured ASIC has been introduced to bridge the power, performance, area and design cost gaps between ASIC and FPGA. As technology scales, leakage power consumption becomes a serious problem. Among the leakage power reduction techniques, power gating ... Keywords: low power, power-gating, structured ASIC, via-configurable

Sin-Yu Chen; Rung-Bin Lin; Hui-Hsiang Tung; Kuen-Wey Lin

2010-03-01T23:59:59.000Z

166

Logic synthesis for low power using clock gating and rewiring  

Science Conference Proceedings (OSTI)

Traditionally, clock gating for power saving is mainly done at Register Transistor Level (RTL), while in a lower logical level some synthesis techniques, e.g. Observability Don't Care (ODC) can also be used to provide more power savings. In this paper, ... Keywords: clock gating, logic synthesis, low power

Tak-Kei Lam; Steve Yang; Wai-Chung Tang; Yu-Liang Wu

2010-05-01T23:59:59.000Z

167

Some issues in advanced CMOS gate stack performance and reliability  

Science Conference Proceedings (OSTI)

This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation ... Keywords: CMOS, Gate Stack, Reliability

Ming-Fu Li; X. P. Wang; C. Shen; J. J. Yang; J. D. Chen; H. Y. Yu; Chunxiang Zhu; Daming Huang

2011-12-01T23:59:59.000Z

168

Cardiac perfusion defect detection using gated dynamic spect imaging  

Science Conference Proceedings (OSTI)

In our previous work we proposed a dynamic image reconstruction procedure for gated cardiac imaging, of which the goal is to obtain a single image sequence that shows simultaneously both cardiac motion and tracer distribution change over time. In this ... Keywords: 5D reconstruction, dynamic SPECT, gated SPECT, spatio-temporal processing

Xiaofeng Niu; Yongyi Yang; Miles N. Wernick

2009-11-01T23:59:59.000Z

169

Detectability of perfusion defect in gated dynamic cardiac spect images  

Science Conference Proceedings (OSTI)

Recently we developed an image reconstruction procedure aimed to unify gated imaging and dynamic imaging in nuclear cardiac imaging. It can yield a single image sequence to show simultaneously both cardiac motion and tracer distribution change over the ... Keywords: 5D reconstruction, dynamic SPECT, gated SPECT, spatio-temporal processing

Xiaofeng Niu; Yongyi Yang; Miles N. Wernick

2009-06-01T23:59:59.000Z

170

Non-deterministic Gates for Photonic Single Rail Quantum Logic  

E-Print Network (OSTI)

We discuss techniques for producing, manipulating and measureing qubits encoded optically as vacuum and single photon states. We show that a universal set of non-deterministic gates can be constructed using linear optics and photon counting. We investigate the efficacy of a test gate given realistic detector efficiencies.

A. P. Lund; T. C. Ralph

2002-05-09T23:59:59.000Z

171

Controlled gates for multi-level quantum computation  

Science Conference Proceedings (OSTI)

Multi-level (ML) quantum logic can potentially reduce the number of inputs/outputs or quantum cells in a quantum circuit which is a limitation in current quantum technology. In this paper we propose theorems about ML-quantum and reversible logic circuits. ... Keywords: Controlled gate, Multi-level logic gates, Quantum computing, Quantum cost, Reversible logic

Majid Mohammadi; Aliakbar Niknafs; Mohammad Eshghi

2011-04-01T23:59:59.000Z

172

Gating internal nodes to reduce power during scan shift  

Science Conference Proceedings (OSTI)

It is a common practice to gate a limited number of scan cells in order to reduce overall switching activity during shift, thereby, reducing the circuit's dynamic power consumption. In this paper, we propose a novel approach to reduce overall shift power ... Keywords: gating internal nodes, low power test, scan shift power reduction

Dheepakkumaran Jayaraman; Rajamani Sethuram; Spyros Tragoudas

2010-05-01T23:59:59.000Z

173

City Marketing and Gated Communities: A Case Study of Guaynabo, Puerto Rico.  

E-Print Network (OSTI)

??This dissertation focuses on the dynamics of gated communities with attention to the municipality of Guaynabo, Puerto Rico. Despite the growing numbers of gated communities (more)

Suarez-Carrasquillo, Carlos A.

2009-01-01T23:59:59.000Z

174

Inside the Castle Gates: How Foreign Corporations Nagivate Japan's Policymaking Processes  

E-Print Network (OSTI)

II INSIDE THE CASTLE GATES: POLITICAL STRATEGIES OF MNCS INfortified castle, there are a number of strategies you mightthe castle gates (Part I), and these political strategies

Kushida, Kenji Erik

2010-01-01T23:59:59.000Z

175

Impact of SF{sub 6} plasma treatment on performance of TaN-HfO{sub 2}-InP metal-oxide-semiconductor field-effect transistor  

SciTech Connect

In this work, the experimental impact of SF{sub 6} plasma treatment on the performance of InP metal-oxide-semiconductor field-effect transistors is presented. S and F are incorporated into atomic layer deposited HfO{sub 2} via postgate SF{sub 6} plasma treatment. The decreased subthreshold swing, gate leakage (I{sub g}), and increased effective channel mobility ({mu}{sub eff}) indicate that better interface and bulk oxide quality have been achieved with SF{sub 6} plasma treatment due to the formation of stronger Hf-F bonds. Drive current (I{sub d}), transconductance (G{sub m}), and effective channel mobility ({mu}{sub eff}) are improved by 22.3%, 35%, and 35%, respectively, compared with those of control devices.

Wang Yanzhen; Chen Yenting; Zhao Han; Xue Fei; Zhou Fei; Lee, Jack C. [Department of Electrical and Computer Engineering, Microelectronics Research Center, University of Texas at Austin, Austin, Texas 78758 (United States)

2011-01-24T23:59:59.000Z

176

Formation, characterization, and application of sputtered Al/sub 2/O/sub 3/ and gamma-Fe/sub 2/O/sub 3/ thin films  

SciTech Connect

One reason to study Al/sub 2/O/sub 3/ film formation is that it may be used as an insulating layer of a thin film inductive transducer for magnetic recording. Another reason is that Al/sub 2/O/sub 3/ could serve as an effective replacement of SiO/sub 2/ as a gate insulation in MOSFET's (metal-oxide-semiconductor field-effect transistor devices). RF diode sputtering is used as the method of forming Al/sub 2/O/sub 3/ and ..gamma..-Fe/sub 2/O/sub 3/ thin films. The effects of oxygen partial pressure, substrate bias, substrate spacing, and residual gas, etc. on the formation of oxide thin films were characterized by x-ray diffraction, SEM, STEM, TEM, ellipsometry, alpha-step scan, EDX, AES, XPS, capacitance bridge, and VSM (Vibrating Sample Magnetometer). It was found that Al/sub 2/O/sub 3/ films sputtered at 400 watts RF power, 10 mtorr total gas pressure, and 6.35 cm target-to-substrate spacing will exhibit the optimum physical properties under the condition of -40 VRF substrate bias and 1 x 10/sup -4/ torr oxygen partial pressure. The effects of oxygen partial pressure and substrate bias are found to be the most important factors in determining the properties of sputtered oxide films.

Chen, G.L.

1985-01-01T23:59:59.000Z

177

The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area  

E-Print Network (OSTI)

The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. For cultivating discussions regarding the connections between gated community territory, safety, and crime experience, this study classifies apartment communities according to the conditions of their gating and fencing: gated communities, perceived gated communities, and non-gated communities. It investigates residents' perceptions of safety and their opinions and managers' opinions on gated territory and safety. The major findings from the surveys are: Residents felt safer in gated communities than in non-gated communities. Residents' perceptions of safety in perceived gated communities were similar to those in gated communities. These results reflected the territoriality issue for improving residents' perceived safety in apartment communities. Residents' perceptions of safety in architectural spaces showed that residents' fear of crime in public and semi-public spaces must first be addressed in order to ease residents' fear of crime in an apartment territory. The reality of crime in apartment communities differed from residents' perceptions of safety. Gated community residents reported a higher crime rate than nongated community residents. In addition to gates and fences that define apartment territory, such elements as patrol services, bright lighting, direct emergency buttons, and visual access to the local police were indicated as the important factors for improving residents' perceived safety. Some architectural factors and demographic factors exhibited statistical correlations with residents' perceptions of safety. Those were types of communities, dwelling floor level, educational attainment, family size, and annual income. For predicting residents' perceptions of safety in their apartment territory, multiple regression models were obtained and residents' neighborhood attachment was also considered in the multiple regression models. The apartment community managers emphasized direct maintenance issues and residents' social contact with neighbors for improving residents' perceived safety. In conclusion, design and managerial suggestions for safer communities were proposed. For creating safer multi-family housing communities, territoriality and related architectural conditions and managerial considerations and residents' participations are emphasized. The concept of community programming for safer multi-family housing communities is suggested.

Kim, Suk Kyung

2006-08-01T23:59:59.000Z

178

Polaron Formation in Colossal Magnetoresistive Oxides  

Science Conference Proceedings (OSTI)

... Unconventional Ferromagnetic Transition In La 1-x Ca x MnO 3 , JW Lynn, RW Erwin, JA Borchers, Q. Huang, A. Santoro, JL Peng, and ZY Li, Phys. ...

179

File Formats  

NLE Websites -- All DOE Office Websites (Extended Search)

Home Page Home Page File Formats MODIS Product Subsets Output Data File Format Descriptions The MODIS product subsets for North America and Worldwide are available in several formats, which are described in the following text. MODIS Land Product ASCII Data Image Data Files in ASCII Grid Format QC-Filtered Data and Statistics Generated for this Request Land Cover Data in ASCII Grid Format Statistical Data for MODIS Land Products in Comma Separated Format Underlying BRDF Parameters Used in Generating this Request (available with Albedo MOD43B and MCD43B only) MODIS Land Product ASCII Data Description of File File Content: Data as read from MODIS Land Product HDF-EOS data files. These data are the starting point for deriving the other subset data products. Data Type: As indicated by Land Product Code (e.g., MOD15A2).

180

MaGate Simulator: A Simulation Environment for a Decentralized Grid Scheduler  

Science Conference Proceedings (OSTI)

This paper presents a simulator for of a decentralized modular grid scheduler named MaGate. MaGate's design emphasizes scheduler interoperability by providing intelligent scheduling serving the grid community as a whole. Each MaGate scheduler instance ... Keywords: Grid Scheduling, MaGate Simulator, Simulation, SmartGRID

Ye Huang; Amos Brocco; Michele Courant; Beat Hirsbrunner; Pierre Kuonen

2009-08-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


181

Characterization of silicon surface preparation processes for advanced gate dielectrics  

Science Conference Proceedings (OSTI)

This paper gives a short overview of issues associated with the surface preparation of silicon surfaces for advanced gate dielectrics and the appearance and nature of the wafer surface after different chemical treatments. The main portion of the paper ...

H. F. Okorn-Schmidt

1999-05-01T23:59:59.000Z

182

The Inference of GATE Convective Rainfall from SMS-1 Imagery  

Science Conference Proceedings (OSTI)

Quantitative precipitation estimates have been made for the GARP (Global Atmospheric Research Program) Atlantic Tropical Experiment (GATE) from geosynchronous, infrared satellite imagery and a computer-automated technique that is described in ...

William L. Woodley; Cecilia G. Griffith; Joseph S. Griffin; Scott C. Stromatt

1980-04-01T23:59:59.000Z

183

Molecular Mechanisms of a Retinal Cyclic Nucleotide-Gated Channel.  

E-Print Network (OSTI)

??Cyclic nucleotide-gated (CNG) channels mediate the transduction of light signals to electrical signals in vertebrate photoreceptors. These channels are non-selective for cations and open upon (more)

Martinez-Francois, Juan R

2009-01-01T23:59:59.000Z

184

TransForum v2n4 - GATE  

NLE Websites -- All DOE Office Websites (Extended Search)

with a "real-world" industrial base made up of 16 partners (such as British Petroleum, Exxon, General Motors, and Honda). The Ohio State University (OSU) GATE program is also...

185

A Comparison of Two Satellite Rainfall Estimates for GATE  

Science Conference Proceedings (OSTI)

Rainfall estimates obtained for the GATE experiment by two satellite rainfall estimation techniques are compared for different time and space scales. The Kilonsky-Ramage technique uses polar-orbiting satellites for 1 resolution rainfall ...

Oswaldo Garcia

1981-04-01T23:59:59.000Z

186

Induction-based gate-level verification of multipliers  

Science Conference Proceedings (OSTI)

We propose a method based on unrolling the inductive definition of binary number multiplication to verify gate-level implementations of multipliers. The induction steps successively reduce the size of the multiplier under verification. Through induction, ...

Ying Tsai Chang; Kwang Ting Tim Cheng

2001-11-01T23:59:59.000Z

187

Experimental demonstration of a Hadamard gate for coherent state qubits  

SciTech Connect

We discuss and make an experimental test of a probabilistic Hadamard gate for coherent state qubits. The scheme is based on linear optical components, nonclassical resources, and the joint projective action of a photon counter and a homodyne detector. We experimentally characterize the gate for the coherent states of the computational basis by full tomographic reconstruction of the transformed output states. Based on the parameters of the experiment, we simulate the fidelity for all coherent state qubits on the Bloch sphere.

Tipsmark, Anders; Laghaout, Amine; Andersen, Ulrik L. [Department of Physics, Technical University of Denmark, Fysikvej, DK-2800 Kgs. Lyngby (Denmark); Dong, Ruifang [Quantum Frequency Standards Division, National Time Service Center (NTSC), Chinese Academy of Sciences, 710600 Lintong, Shaanxi (China); Department of Physics, Technical University of Denmark, Fysikvej, DK-2800 Kgs. Lyngby (Denmark); Marek, Petr [Department of Optics, Palacky University, 17. listopadu 12, CZ-77146 Olomouc (Czech Republic); Jezek, Miroslav [Department of Optics, Palacky University, 17. listopadu 12, CZ-77146 Olomouc (Czech Republic); Department of Physics, Technical University of Denmark, Fysikvej, DK-2800 Kgs. Lyngby (Denmark)

2011-11-15T23:59:59.000Z

188

Electroluminescence in ion gel gated organic polymer semiconductor transistors  

E-Print Network (OSTI)

emission in ion gel gated, thin film organic semiconductor tran- sistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit light when the drain source volt- age... the organic light emitting devices become mainstream, there are several challenges that need to be resolved and current research focus is to ad- dress those challenges. One particular challenge is relatively high operating volt- ages of light emitting organic...

Bhat, Shrivalli

2011-07-12T23:59:59.000Z

189

Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide  

Science Conference Proceedings (OSTI)

Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J. [MIT Lincoln Laboratory, 244 Wood Street, Lexington, Massachusetts 02420 (United States); Oxford Instruments Plasma Technology, Yatton, Bristol, BS49 4AP (United Kingdom)

2012-01-15T23:59:59.000Z

190

Final Technical GATE Report, 1998-2006  

SciTech Connect

In 1998, the U.S. Department of Energy (DOE) funded 10 proposals to establish graduate automotive technology education (GATE) centers of excellence at nine universities, each addressing a specific technological area. The University of California, Davis was chosen for two centers: Fuel Cell Center and Hybrid-Electric Vehicle Design Center (power drivetrains and control strategies). This report is specific to the Fuel Cell Center only, which was housed at the UC Davis Institute of Transportation Studies (ITS-Davis). ITS-Davis created the Fuel Cell Vehicle Center, with the following goals: (1) create an interdisciplinary fuel cell vehicle curriculum that cuts across engineering, the physical sciences and, to a lesser extent, the social sciences; (2) expand and strengthen the then-emerging multidisciplinary fuel cell vehicle research program; (3) strengthen links with industry; (4) create an active public outreach program; and (5) serve as neutral ground for interactions between academia, the auto, energy, and technology industries, government, and public-interest non-governmental organizations. At the time of proposal, the Center had a solid track record in fuel cell research, strong connections with industry, strong campus support, a core group of distinguished and motivated faculty, and an established institutional foundation for fuel cell vehicle research and education.

GATE Fuel Cell Vehicle Center

2006-09-30T23:59:59.000Z

191

Gated integrator with signal baseline subtraction  

DOE Patents (OSTI)

An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

Wang, Xucheng (Lisle, IL)

1996-01-01T23:59:59.000Z

192

Gated integrator with signal baseline subtraction  

DOE Patents (OSTI)

An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

Wang, X.

1996-12-17T23:59:59.000Z

193

Multifunctional Oxides  

Science Conference Proceedings (OSTI)

3) Electric, ferroelectric, magnetic and photonic properties of oxides 4) Theoretical modeling of epitaxial growth, interfaces and microstructures 5) Composition...

194

PREPARATION OF REFRACTORY OXIDE MICROSPHERE  

DOE Patents (OSTI)

A method is described of preparing thorium oxide in the form of fused spherical particles about 1 to 2 microns in diameter. A combustible organic solution of thorium nitrate containing additive metal values is dispersed into a reflected, oxygen-fed flame at a temperature above the melting point of the resulting oxide. The metal additive is aluminum at a proportion such as to provide 1 to 10 weight per cent aluminum oxide in the product, silicon at the same proportion, or beryllium at a proportion of 12 to 25 weight per cent beryllium oxide in the product. A minor proportion of uranium values may also be provided in the solution. The metal additive lowers the oxide melting point and allows fusion and sphere formation in conventional equipment. The product particles are suitable for use in thorium oxide slurries for nuclear reactors. (AEC)

Haws, C.C. Jr.

1963-09-24T23:59:59.000Z

195

Free-surface flow simulations for discharge-based operation of hydraulic structure gates  

E-Print Network (OSTI)

We combine non-hydrostatic flow simulations of the free surface with a discharge model based on elementary gate flow equations for decision support in operation of hydraulic structure gates. A water level-based gate control used in most of today's general practice does not take into account the fact that gate operation scenarios producing similar total discharged volumes and similar water levels may have different local flow characteristics. Accurate and timely prediction of local flow conditions around hydraulic gates is important for several aspects of structure management: ecology, scour, flow-induced gate vibrations and waterway navigation. The modelling approach is described and tested for a multi-gate sluice structure regulating discharge from a river to the sea. The number of opened gates is varied and the discharge is stabilized with automated control by varying gate openings. The free-surface model was validated for discharge showing a correlation coefficient of 0.994 compared to experimental data. A...

Erdbrink, C D; Sloot, P M A

2012-01-01T23:59:59.000Z

196

GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

A GaN based depletion mode metal oxide semiconductor field effect transistor (MOSFET) was demonstrated using Ga{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) as the gate dielectric. The MOS gate reverse breakdown voltage was > 35V which was significantly improved from 17V of Pt Schottky gate on the same material. A maximum extrinsic transconductance of 15 mS/mm was obtained at V{sub ds} = 30 V and device performance was limited by the contact resistance. A unity current gain cut-off frequency, f{sub {tau}}, and maximum frequency of oscillation, f{sub max} of 3.1 and 10.3 GHz, respectively, were measured at V{sub ds} = 25 V and V{sub gs} = {minus}20 V.

Ren, F.; Pearton, S.J.; Abernathy, C.R.; Baca, A.; Cheng, P.; Shul, R.J.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Schurman, M.J.

1999-03-02T23:59:59.000Z

197

Entangling unitary gates on distant qubits with ancilla feedback  

E-Print Network (OSTI)

By using an ancilla qubit as a mediator, two distant qubits can undergo a non-local entangling unitary operation. This is desirable for when attempting to scale up or distribute quantum computation by combining fixed static local sets of qubits with ballistic mediators. Using a model driven by measurements on the ancilla, it is possible to generate a maximally entangling CZ gate while only having access to a less entangling gate between the pair qubits and the ancilla. However this results in a stochastic process of generating control phase rotation gates where the expected time for success does not correlate with the entangling power of the connection gate. We explore how one can use feedback into the preparation and measurement parameters of the ancilla to speed up the expected time to generate a CZ gate between a pair of separated qubits and to leverage stronger coupling strengths for faster times. Surprisingly, by choosing an appropriate strategy, control of a binary discrete parameter achieves comparable speed up to full continuous control of all degrees of freedom of the ancilla.

Kerem Halil Shah; Daniel K. L. Oi

2013-11-14T23:59:59.000Z

198

An optical fusion gate for W-states  

E-Print Network (OSTI)

We introduce a simple optical gate to fuse arbitrary size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half wave plate (HWP) and two photon detectors. We study numerically and analytically the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy which is based on recycling and outperforms the optimal strategy for non-recycling case.

Sahin Kaya Ozdemir; Eiji Matsunaga; Toshiyuki Tashima; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

2011-03-11T23:59:59.000Z

199

Posters Single-Column Model and Cumulus Ensemble Model Simulations of GATE Data  

NLE Websites -- All DOE Office Websites (Extended Search)

3 3 Posters Single-Column Model and Cumulus Ensemble Model Simulations of GATE Data D. A. Randall and K.-M Xu Colorado State University Department of Atmospheric Science Fort Collins, Colorado Introduction Our project for the Atmospheric Radiation Measurement (ARM) Program consists of developing and demonstrating improved cloud formation parameterizations using a single-column model (SCM), a cumulus ensemble model (CEM), and ARM data. These two models can be driven with large-scale forcing (e.g., vertical motion) as observed in ARM. Each model produces a field of clouds and the associated radiation and precipitation fields. The SCM does so through its physical parameterizations, while the CEM does so by directly simulating convective cloud circulations. The improved parameterizations tested in this way will be

200

Four-Dimensional Analysis Experiment During the Gate Period Part II  

Science Conference Proceedings (OSTI)

The GATE analysis was repeated utilizing the full GATE data set in the delayed mode and a revised four-dimensional analysis procedure. The resulting maps wore compared with maps of other author. Based on the new analysis, macroscale circulation ...

K. Miyakoda; J. Sheldon; J. Sirutis

1982-03-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


201

Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques  

E-Print Network (OSTI)

Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture ...

Hashemi, Pouya

2010-01-01T23:59:59.000Z

202

Developing Reusable and Robust Language Processing Components for Information Systems using GATE  

Science Conference Proceedings (OSTI)

In this paper we present GATE, an architecture and a graphical development environment which enables users to develop and deploy HLT applications in a robust fashion. GATE also provides reusable, extendable, and customisable language processing modules ...

Kalina Bontcheva; Hamish Cunningham; Diana Maynard; Valentin Tablan; Horacio Saggion

2002-09-01T23:59:59.000Z

203

Workfunction Tuning of n-Channel MOSFETs Using Interfacial Yttrium Layer in Fully Silicided Nickel Gate  

E-Print Network (OSTI)

Continual scaling of the CMOS technology requires thinner gate dielectric to maintain high performance. However, when moving into the sub-45 nm CMOS generation, the traditional poly-Si gate approach cannot effectively ...

Yu, Hongpeng

204

Embedded automatic parking management system based on RFID and existed gate system integration  

Science Conference Proceedings (OSTI)

In this paper, an Embedded Automatic Parking Management System (EAPMS) that integrates the existed gate system and RFID is proposed. This system includes Embedded Gate Hardware, Gate-PC Controller, RFID System, Parking Management Platform. Most systems ... Keywords: RFID, embedded, parking management, system integration

Ming-Shen Jian; Kuen Shiuh Yang; Chung-Lun Lee; Nan-Yuan Huang

2008-07-01T23:59:59.000Z

205

Modular RFID parking management system based on existed gate system integration  

Science Conference Proceedings (OSTI)

In this paper, a Modular RFID Parking Management System that integrates the existed gate system and RFID is proposed. This system includes Modular Gate-PC Controller and Embedded Gate Hardware, RFID System, Modular Parking Management Platform. Most systems ... Keywords: RFID, embedded, modular, parking management, system integration

Ming-Shen Jian; Kuen Shiuh Yang; Chung-Lun Lee

2008-06-01T23:59:59.000Z

206

MaGate: An Interoperable, Decentralized and Modular High-Level Grid Scheduler  

Science Conference Proceedings (OSTI)

This work presents the design and architecture of a decentralized grid scheduler named MaGate, which is developed within the SmartGRID project and focuses on grid scheduler interoperation. The MaGate scheduler is modular structured, and emphasizes the ... Keywords: Grid Computing, MaGate Scheduler, Meta-Scheduling, Scheduling, SmartGRID

Ye Huang; Amos Brocco; Michele Courant; Beat Hirsbrunne; Pierre Kuonen

2010-07-01T23:59:59.000Z

207

Integrated Power-Gating and State Assignment for Low Power FSM Synthesis  

Science Conference Proceedings (OSTI)

Power-gating is an effective technique for reducing standby leakage power and dynamic power. In power-gating one can shut off the power supply to sections of logic block while keeping other logic blocks active. However, careful design is required to ... Keywords: Low power synthesis, Power-gating, FSM decomposition, State encoding, Genetic Algorithm

Sambhu Nath Pradhan; M. Tilak Kumar; Santanu Chattopadhyay

2008-04-01T23:59:59.000Z

208

Reducing transistor count in clocked standard cells with ambipolar double-gate FETs  

Science Conference Proceedings (OSTI)

This paper presents a set of circuit design approaches to achieve clocked standard logic cell functions with ambipolar double-gate devices such as the Double Gate Carbon Nanotube FET (DG-CNTFET). The cells presented in this work use the infield controllability ... Keywords: CNTFETs, advanced technologies, ambipolar double-gate devices, dynamic logic, standard cells

K. Jabeur; D. Navarro; I. O'Connor; P. E. Gaillardon; M. H. Ben Jamaa; F. Clermidy

2010-06-01T23:59:59.000Z

209

Low power interconnect design for fpgas with bidirectional wiring using nanocrystal floating gate devices (abstract only)  

Science Conference Proceedings (OSTI)

New architectures for the switch box and connection block are proposed for use in an energy efficient field programmable gate array (FPGA) with bidirectional wiring. Power-hungry SRAMs are replaced by non-volatile nanocrystal floating gate (NCFG) devices ... Keywords: bidirectional wiring, connection block, floating gate, fpga, high speed, low power, nanocrystal, switch box

Daniel Schinke; Wallace Shep Pitts; Neil Di Spigna; Paul Franzon

2011-02-01T23:59:59.000Z

210

Temperature-controlled molecular depolarization gates in nuclear magnetic resonance  

SciTech Connect

Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

2008-02-27T23:59:59.000Z

211

Towards practical biomolecular computers using microfluidic deoxyribozyme logic gate networks  

Science Conference Proceedings (OSTI)

We propose a way of implementing a biomolecular computer in the laboratory using deoxyribozyme logic gates inside a microfluidic reaction chamber. We build upon our previous work, which simulated the operation of a flip-flop and an oscillator based on ...

Joseph Farfel; Darko Stefanovic

2005-06-01T23:59:59.000Z

212

Quantification of Priority-OR gates in temporal fault trees  

Science Conference Proceedings (OSTI)

Fault Tree Analysis has been used in reliability engineering for many decades and has seen various modifications to enable it to analyse fault trees with dynamic and temporal gates so it can incorporate sequential failure in its analysis. Pandora is ... Keywords: Markov chains, Monte Carlo, Pandora, dynamic fault trees, fault trees, safety

Ernest Edifor; Martin Walker; Neil Gordon

2012-09-01T23:59:59.000Z

213

Experimental Realization of Non-Abelian Geometric Gates  

E-Print Network (OSTI)

The geometric aspects of quantum mechanics are underlined most prominently by the concept of geometric phases, which are acquired whenever a quantum system evolves along a closed path in Hilbert space. The geometric phase is determined only by the shape of this path and is -- in its simplest form -- a real number. However, if the system contains degenerate energy levels, matrix-valued geometric phases, termed non-abelian holonomies, can emerge. They play an important role for the creation of synthetic gauge fields in cold atomic gases and the description of non-abelian anyon statistics. Moreover, it has been proposed to exploit non-abelian holonomic gates for robust quantum computation. In contrast to abelian geometric phases, non-abelian ones have been observed only in nuclear quadrupole resonance experiments with a large number of spins and without fully characterizing the geometric process and its non-commutative nature. Here, we realize non-abelian holonomic quantum operations on a single superconducting artificial three-level atom by applying a well controlled two-tone microwave drive. Using quantum process tomography, we determine fidelities of the resulting non-commuting gates exceeding 95 %. We show that a sequence of two paths in Hilbert space traversed in different order yields inequivalent transformations, which is an evidence for the non-abelian character of the implemented holonomic quantum gates. In combination with two-qubit operations, they form a universal set of gates for holonomic quantum computation.

A. A. Abdumalikov; J. M. Fink; K. Juliusson; M. Pechal; S. Berger; A. Wallraff; S. Filipp

2013-04-18T23:59:59.000Z

214

Advanced Gate Drive for the SNS High Voltage Converter Modulator  

SciTech Connect

SLAC National Accelerator Laboratory is developing a next generation H-bridge switch plate [1], a critical component of the SNS High Voltage Converter Modulator [2]. As part of that effort, a new IGBT gate driver has been developed. The drivers are an integral part of the switch plate, which are essential to ensuring fault-tolerant, high-performance operation of the modulator. The redesigned driver improves upon the existing gate drive in several ways. The new gate driver has improved fault detection and suppression capabilities; suppression of shoot-through and over-voltage conditions, monitoring of dI/dt and Vce(sat) for fast over-current detection and suppression, and redundant power isolation are some of the added features. In addition, triggering insertion delay is reduced by a factor of four compared to the existing driver. This paper details the design and performance of the new IGBT gate driver. A simplified schematic and description of the construction are included. The operation of the fast over-current detection circuits, active IGBT over-voltage protection circuit, shoot-through prevention circuitry, and control power isolation breakdown detection circuit are discussed.

Nguyen, M.N.; Burkhart, C.; Kemp, M.A.; /SLAC; Anderson, D.E.; /Oak Ridge

2009-05-07T23:59:59.000Z

215

Tropical Squall Lines over the Eastern Atlantic during GATE  

Science Conference Proceedings (OSTI)

During the entire period of GATE, all oceanic squall lines over the A/B array developed in the vicinity of the near-equatorial convergence zone (NECZ) when a strong midtropospheric easterly jet along the leading and southern borders of a Saharan ...

Yi-Leng Chen

1985-11-01T23:59:59.000Z

216

Formation of nanoscale Mg(x)Fe(1-x)O (x = 0.1, 0.2, 0.4) structure by solution combustion: effect of fuel to oxidizer ratio  

Science Conference Proceedings (OSTI)

Mg(x)Fe(1-x)O (magnesiowustite) nanopowder samples synthesized by solution-combustion method and fuel to oxidizer ratio (? = 1, 1.25) are used as a control parameter to investigate how particle size and morphology vary with ...

Mohsen Ahmadipour, K. Venkateswara Rao, V. Rajendar

2012-01-01T23:59:59.000Z

217

Transmission gates combined with level-restoring CMOS gates reduce glitches in low-power low-frequency multipliers  

Science Conference Proceedings (OSTI)

Various 16-bit multiplier architectures are compared in terms of dissipated energy, propagation delay, energy-delay product (EDP), and area occupation, in view of low-power low-voltage signal processing for low-frequency applications. A novel practical ... Keywords: arithmetic, glitch, low frequency, low power, multiplier, switching activity, transmission gate

Flavio Carbognani; Felix Buergin; Norbert Felber; Hubert Kaeslin; Wolfgang Fichtner

2008-07-01T23:59:59.000Z

218

IMPROVED MAGNESIUM OXIDE SLIP CASTING METHOD  

DOE Patents (OSTI)

A process for making an aqueous magnesium oxide slip casting slurry comprising the steps of mixing finely ground fused magnesium oxide with water, milling the slurry for at least 30 hours at a temperature of 2-10 deg C (the low temperature during milling inhibiting the formation of hydrated magnesium oxide), discharging the slurry from the mill, adding hydrochloric acid as a deflocculent, and adding a scum inhibitor is presented. (AEC)

Stoddard, S.D.; Nuckolls, D.E.

1963-12-31T23:59:59.000Z

219

C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric  

Science Conference Proceedings (OSTI)

Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al"2O"3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical ... Keywords: ALD Al2O3, CMOS integration, Ge MOSCAP, Ge epitaxial film, RTO

Shih Hsuan Tang; Chien I. Kuo; Hai Dang Trinh; Mantu Hudait; Edward Yi Chang; Ching Yi Hsu; Yung Hsuan Su; Guang-Li Luo; Hong Quan Nguyen

2012-09-01T23:59:59.000Z

220

Phase gate of one superconducting qubit simultaneously controlling n qubits in a cavity  

E-Print Network (OSTI)

We propose how to realize a three-step controlled-phase gate of one superconducting qubit simultaneously controlling n qubits selected from N qubits in a cavity (1nN). The operation time of this gate is independent of the number n of qubits involved in the gate operation. This phase gate controlling at once n qubits is insensitive to the initial state of the cavity mode and can be used to produce an analogous CNOT gate simultaneously acting on n qubits.

Chui-Ping Yang; Yu-xi Liu; Franco Nori

2009-07-24T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


221

Structure of the gating ring from the human large-conductance Ca[superscript 2+]-gated K[superscript +] channel  

SciTech Connect

Large-conductance Ca{sup 2+}-gated K{sup +} (BK) channels are essential for many biological processes such as smooth muscle contraction and neurotransmitter release. This group of channels can be activated synergistically by both voltage and intracellular Ca{sup 2+}, with the large carboxy-terminal intracellular portion being responsible for Ca{sup 2+} sensing. Here we present the crystal structure of the entire cytoplasmic region of the human BK channel in a Ca{sup 2+}-free state. The structure reveals four intracellular subunits, each comprising two tandem RCK domains, assembled into a gating ring similar to that seen in the MthK channel and probably representing its physiological assembly. Three Ca{sup 2+} binding sites including the Ca{sup 2+} bowl are mapped onto the structure based on mutagenesis data. The Ca{sup 2+} bowl, located within the second RCK domain, forms an EF-hand-like motif and is strategically positioned close to the assembly interface between two subunits. The other two Ca{sup 2+} (or Mg{sup 2+}) binding sites, Asp367 and Glu374/Glu399, are located on the first RCK domain. The Asp367 site has high Ca{sup 2+} sensitivity and is positioned in the groove between the amino- and carboxy-terminal subdomains of RCK1, whereas the low-affinity Mg{sup 2+}-binding Glu374/Glu399 site is positioned on the upper plateau of the gating ring and close to the membrane. Our structure also contains the linker connecting the transmembrane and intracellular domains, allowing us to dock a voltage-gated K{sup +} channel pore of known structure onto the gating ring with reasonable accuracy and generate a structural model for the full BK channel.

Wu, Yunkun; Yang, Yi; Ye, Sheng; Jiang, Youxing (Zhejiang); (UTSMC)

2010-11-12T23:59:59.000Z

222

A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation  

Science Conference Proceedings (OSTI)

Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

Hu Weigang; Xu Anjie; Li Guichao; Zhang Zhen; Housley, Dave; Ye Jinsong [Department of Radiation Oncology, Fudan University Shanghai Cancer Center and Department of Oncology, Shanghai Medical College, Fudan University, Shanghai 200032 (China); Department of Radiation Oncology, Swedish Cancer Institute, Seattle, Washington 98104 (United States)

2012-03-15T23:59:59.000Z

223

South Gate, California: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, California: Energy Resources Gate, California: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 33.954737°, -118.2120161° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":33.954737,"lon":-118.2120161,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

224

Ocean Gate, New Jersey: Energy Resources | Open Energy Information  

Open Energy Info (EERE)

Gate, New Jersey: Energy Resources Gate, New Jersey: Energy Resources Jump to: navigation, search Equivalent URI DBpedia Coordinates 39.926785°, -74.1337496° Loading map... {"minzoom":false,"mappingservice":"googlemaps3","type":"ROADMAP","zoom":14,"types":["ROADMAP","SATELLITE","HYBRID","TERRAIN"],"geoservice":"google","maxzoom":false,"width":"600px","height":"350px","centre":false,"title":"","label":"","icon":"","visitedicon":"","lines":[],"polygons":[],"circles":[],"rectangles":[],"copycoords":false,"static":false,"wmsoverlay":"","layers":[],"controls":["pan","zoom","type","scale","streetview"],"zoomstyle":"DEFAULT","typestyle":"DEFAULT","autoinfowindows":false,"kml":[],"gkml":[],"fusiontables":[],"resizable":false,"tilt":0,"kmlrezoom":false,"poi":true,"imageoverlays":[],"markercluster":false,"searchmarkers":"","locations":[{"text":"","title":"","link":null,"lat":39.926785,"lon":-74.1337496,"alt":0,"address":"","icon":"","group":"","inlineLabel":"","visitedicon":""}]}

225

Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost  

E-Print Network (OSTI)

Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

Robert Wille; Mehdi Saeedi; Rolf Drechsler

2010-04-26T23:59:59.000Z

226

Bayesian estimation of one-parameter qubit gates  

E-Print Network (OSTI)

We address estimation of one-parameter unitary gates for qubit systems and seek for optimal probes and measurements. Single- and two-qubit probes are analyzed in details focusing on precision and stability of the estimation procedure. Bayesian inference is employed and compared with the ultimate quantum limits to precision, taking into account the biased nature of Bayes estimator in the non asymptotic regime. Besides, through the evaluation of the asymptotic a posteriori distribution for the gate parameter and the comparison with the results of Monte Carlo simulated experiments, we show that asymptotic optimality of Bayes estimator is actually achieved after a limited number of runs. The robustness of the estimation procedure against fluctuations of the measurement settings is investigated and the use of entanglement to improve the overall stability of the estimation scheme is also analyzed in some details.

Berihu Teklu; Stefano Olivares; Matteo G A Paris

2008-12-04T23:59:59.000Z

227

Free Energies of Novel Metal Oxides and Metal Oxide Surfaces at ...  

Science Conference Proceedings (OSTI)

Abstract Scope, The deposition of metal oxides on nuclear fuel rods in ... melds first principles calculations with experimental free energies of formation, we have ... and Pressures using Thermodynamics Informed by Density Functional Theory.

228

Formation of nano-crystalline todorokite from biogenic Mn Xiong Han Feng a,1  

E-Print Network (OSTI)

Formation of nano-crystalline todorokite from biogenic Mn oxides Xiong Han Feng a,1 , Mengqiang Zhu oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano

Sparks, Donald L.

229

GATE Center for Automotive Fuel Cell Systems at Virginia Tech  

SciTech Connect

The Virginia Tech GATE Center for Automotive Fuel Cell Systems (CAFCS) achieved the following objectives in support of the domestic automotive industry: ? Expanded and updated fuel cell and vehicle technologies education programs; ? Conducted industry directed research in three thrust areas ?? development and characterization of materials for PEM fuel cells; performance and durability modeling for PEM fuel cells; and fuel cell systems design and optimization, including hybrid and plug-in hybrid fuel cell vehicles; ? Developed MS and Ph.D. engineers and scientists who are pursuing careers related to fuel cells and automotive applications; ? Published research results that provide industry with new knowledge which contributes to the advancement of fuel cell and vehicle systems commercialization. With support from the Dept. of Energy, the CAFCS upgraded existing graduate course offerings; introduced a hands-on laboratory component that make use of Virginia Tech??s comprehensive laboratory facilities, funded 15 GATE Fellowships over a five year period; and expanded our program of industry interaction to improve student awareness of challenges and opportunities in the automotive industry. GATE Center graduate students have a state-of-the-art research experience preparing them for a career to contribute to the advancement fuel cell and vehicle technologies.

Nelson, Douglas

2011-05-31T23:59:59.000Z

230

Implementation of dynamically corrected gates for single-spin qubits  

E-Print Network (OSTI)

Precise control of an open quantum system is critical to quantum information processing, but is challenging due to inevitable interactions between the quantum system and the environment. We demonstrated experimentally at room temperature a type of dynamically corrected gates on the nitrogen-vacancy centers in diamond. The infidelity of quantum gates caused by environment nuclear spin bath is reduced from being the second-order to the sixth-order of the noise to control field ratio, which offers greater efficiency in reducing the infidelity by reducing the noise level. The decay time of the coherent oscillation driven by dynamically corrected gates is shown to be two orders of magnitude longer than the dephasing time, and is essentially limited by spin-lattice relaxation. The infidelity of DCG, which is actually constrained by the decay time, reaches $4\\times 10^{-3}$ at room temperature and is further reducible by 2-3 orders of magnitudes via lowering temperature. The greatly reduced noise dependence of infidelity and the uttermost extension of the coherent time mark an important step towards fault-tolerant quantum computation in realistic systems.

Xing Rong; Jianpei Geng; Zixiang Wang; Qi Zhang; Chenyong Ju; Fazhan Shi; Chang-Kui Duan; Jiangfeng Du

2013-09-21T23:59:59.000Z

231

Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene  

Science Conference Proceedings (OSTI)

The electronic bandgap is an intrinsic property of semiconductors and insulators that largely determines their transport and optical properties. As such, it has a central role in modern device physics and technology and governs the operation of semiconductor devices such as p-n junctions, transistors, photodiodes and lasers. A tunable bandgap would be highly desirable because it would allow great flexibility in design and optimization of such devices, in particular if it could be tuned by applying a variable external electric field. However, in conventional materials, the bandgap is fixed by their crystalline structure, preventing such bandgap control. Here we demonstrate the realization of a widely tunable electronic bandgap in electrically gated bilayer graphene. Using a dual-gate bilayer graphene field-effect transistor (FET) and infrared microspectroscopy, we demonstrate a gate-controlled, continuously tunable bandgap of up to 250 meV. Our technique avoids uncontrolled chemical doping and provides direct evidence of a widely tunable bandgap -- spanning a spectral range from zero to mid-infrared -- that has eluded previous attempts. Combined with the remarkable electrical transport properties of such systems, this electrostatic bandgap control suggests novel nanoelectronic and nanophotonic device applications based on graphene.

Zhang, Yuanbo; Tang, Tsung-Ta; Girit, Caglar; Hao, Zhao; Martin, Michael C.; Zettl, Alex; Crommie, Michael F.; Shen, Y. Ron; Wang, Feng

2009-08-11T23:59:59.000Z

232

Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors  

E-Print Network (OSTI)

Thermodynamic Considerations in the Stability of BinaryIn this paper, a thermodynamic analysis of the proposedS CHLOM evaluated the thermodynamic stability of a large set

Stemmer, Susanne

2004-01-01T23:59:59.000Z

233

HH8, Characterization of Thin InAlP Native Oxide Gate Dielectric ...  

Science Conference Proceedings (OSTI)

DD3, A New Approach to Make ZnO-Cu2O Heterojunctions for Solar Cells ... E2, AlGaAs/GaAs/GaN Wafer Fused HBTs with Ar Implanted Extrinsic Collectors.

234

Oxidation catalyst  

DOE Patents (OSTI)

The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

2010-11-09T23:59:59.000Z

235

Direct-Coupling O? Bond Forming Pathway in Cobalt Oxide Water Oxidation Catalysts  

E-Print Network (OSTI)

We report a catalytic mechanism for water oxidation in a cobalt oxide cubane model compound, in which the crucial OO bond formation step takes place by direct coupling between two CoIV(O) metal oxo groups. Our results are ...

Wang, Lee-Ping

236

Method for formation of thin film transistors on plastic substrates  

DOE Patents (OSTI)

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

1998-10-06T23:59:59.000Z

237

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

Kim, K; Aolita, L; Hffner, H; Nebendahl, V; Blatt, R

2007-01-01T23:59:59.000Z

238

Geometric phase gate on an optical transition for ion trap quantum computation  

E-Print Network (OSTI)

We propose a geometric phase gate of two ion qubits that are encoded in two levels linked by an optical dipole-forbidden transition. Compared to hyperfine geometric phase gates mediated by electric dipole transitions, the gate has many interesting properties, such as very low spontaneous emission rates, applicability to magnetic field insensitive states, and use of a co-propagating laser beam geometry. We estimate that current technology allows for infidelities of around 10$^{-4}$.

K. Kim; C. F. Roos; L. Aolita; H. Haeffner; V. Nebendahl; R. Blatt

2007-10-21T23:59:59.000Z

239

Tide gate sensor network as a forensic tool: establishing facts during superstorm sandy  

Science Conference Proceedings (OSTI)

This study presents a Sensor Network based Tide Gate Monitoring System (SensorTGMS) that automatically collects the real-time water levels at tide gates in the New Jersey Meadowlands District where ninety percent of which lies within two feet of the ... Keywords: emergency management, flood alerts, forensic analysis, hurricane, hurricane damages, sensor network, superstorm sandy, tide gate monitoring system, water level, water quality

Soon Ae Chun; Francisco Artigas

2013-06-01T23:59:59.000Z

240

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary...  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

- Bart Gordon, K&L Gates, Partner; Former Representative from Tennessee Stefan Heck, McKinsey & Co., Director, Leader of Global Cleantech Practice Carrie Houtman, The Dow Chemical...

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


241

Structural Insights into Ion Selectivity and Calcium Blockage in Cyclic Nucleotide Gated Channels.  

E-Print Network (OSTI)

??Cyclic nucleotides-gated (CNG) channels play an essential role in the visual and olfactory sensory systems and are ubiquitously expressed in a variety of neuronal and (more)

[No author

2010-01-01T23:59:59.000Z

242

U-9: Implementation of Parylene as a Low- ? Gate Dielectric Material ...  

Science Conference Proceedings (OSTI)

For a top gated FET, the graphene-dielectric interface play an important role in the FET behavior and mobility degradation mainly due to carrier scattering after...

243

Investigation of the Local Structure of Graphene Oxide  

Science Conference Proceedings (OSTI)

A study of the local structure of graphene oxide is presented. Graphene oxide is understood to be partially oxidized graphene. Absorption peaks corresponding to interlayer states suggest the presence of pristine graphitic nanoislands in graphene oxide. Site-projected partial density of states of carbon atoms bonded to oxygen atoms suggests that the broadening of the peak due to interlayer states in the carbon K-edge spectrum of graphene oxide is predominantly due to formation of epoxide linkages. Density functional theory suggests that multilayers of graphene oxide are linked by peroxide-like linkages.

S Saxena; T Tyson; E Negusse

2011-12-31T23:59:59.000Z

244

Characterization of a transient +2 sulfur oxidation state intermediate from the oxidation of aqueous sulfide  

Science Conference Proceedings (OSTI)

The oxidation H{sub 2}S to sulfate involves a net transfer of eight electrons and occurs through the formation of several partially oxidized intermediates with oxidation states ranging from {minus}1 to +5. Known intermediates include elemental sulfur (oxidation state 0), polysulfides (outer sulfur: {minus}1, inner sulfur: 0), sulfite (+4) and thiosulfate (outer sulfur: {minus}1, inner sulfur: +5). A noticeable gap in this series of intermediates is that of a +2 sulfur oxidation state oxoacid/oxoanion species, which was never detected experimentally. Here, we present evidence of the transient existence of +2 oxidation state intermediate in the Ni(II)-catalyzed oxidation of aqueous sulfide. X-ray absorption near-edge structure (XANES) spectroscopy and Fourier-transform-infrared (FT-IR) spectroscopy were used to characterize this species; they suggest that it has a sulfoxylate ion (SO{sub 2}{sup 2{minus}}) structure.

Vairavmurthy, M.A.; Zhou, Weiqing

1995-04-01T23:59:59.000Z

245

Ni-Pt silicide formation through Ti mediating layers  

Science Conference Proceedings (OSTI)

With Ni"1"-"xPt"xSi, the variation in queue time between the final surface cleaning and Ni-Pt deposition represents a significant manufacturability issue. A short queue time is often difficult to maintain, leading to the formation of an oxide layer on ... Keywords: Mediated reaction, Nickel silicide, Oxidation, Titanium

Paul Besser; Christian Lavoie; Ahmet Ozcan; Conal Murray; Jay Strane; Keith Wong; Michael Gribelyuk; Yun-Yu Wang; Christopher Parks; Jean Jordan-Sweet

2007-11-01T23:59:59.000Z

246

Workshop on gate valve pressure locking and thermal binding  

SciTech Connect

The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

Brown, E.J.

1995-07-01T23:59:59.000Z

247

GATE Air-Sea Interactions II: Numerical-Model Calculation of Regional Sea-Surface Temperature Fields Using the GATE Version III Gridded Global Data Set  

Science Conference Proceedings (OSTI)

The numerical model of air-sea interaction previously described in Brown et al. (1982), Pandolfo and Jacobs (1972) and Pandolfo (1969) is applied over a limited horizontal portion of the GATE III Gridded Global Data set (including continental ...

P. S. Brown Jr.; J. P. Pandolfo; G. D. Robinson

1982-10-01T23:59:59.000Z

248

Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional  

E-Print Network (OSTI)

We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

2009-05-21T23:59:59.000Z

249

Fault diagnosis in reversible circuits under missing-gate fault model  

Science Conference Proceedings (OSTI)

This article presents a novel technique for fault detection as well as fault location in a reversible combinational circuit under the missing gate fault model. It is shown that in an (nxn) reversible circuit implemented with k-CNOT gates, addition of ...

Hafizur Rahaman; Dipak K. Kole; Debesh K. Das; Bhargab B. Bhattacharya

2011-07-01T23:59:59.000Z

250

Event-driven gate-level simulation with GP-GPUs  

Science Conference Proceedings (OSTI)

Logic simulation is a critical component of the design tool flow in modern hardware development efforts. It is used widely -- from high-level descriptions down to gate-level ones -- to validate several aspects of the design, particularly functional correctness. ... Keywords: gate-level simulation, general purpose graphics processing unit (GP-GPU), high-performance simulation

Debapriya Chatterjee; Andrew DeOrio; Valeria Bertacco

2009-07-01T23:59:59.000Z

251

Bias temperature instability from gate charge characteristics investigations in N-Channel Power MOSFET  

Science Conference Proceedings (OSTI)

This paper reports the effects of bias temperature stress (positive and negative bias temperature instabilites, PBTI-NBTI) on threshold voltage, input capacitance and Miller capacitance of N-Channel Power MOSFET. The device is stressed with gate voltage ... Keywords: Gate charge, NBTI, PBTI, Power MOSFET, Thermal cycling, Thermal stress

M. Alwan; B. Beydoun; K. Ketata; M. Zoaeter

2007-06-01T23:59:59.000Z

252

Multi-Input Floating Gate Differential Amplifier and Application to Intelligent Sensors  

Science Conference Proceedings (OSTI)

Multi-input floating gate differential amplifier (FGDA) is proposed which can perform any convolution operation with differential structure and feedback loop. All operations are in the voltage mode. Only one terminal is required for the negative feedback ... Keywords: DCT, floating gate, image compression, image sensor, signal processing

Takeyasu Sakai; Hiromasa Nagai; Takashi Matsumoto

2000-12-01T23:59:59.000Z

253

Cumulonimbus Vertical Velocity Events in GATE. Part I: Diameter, Intensity and Mass Flux  

Science Conference Proceedings (OSTI)

This is the first part of a two-part paper defining the nature of the vertical air motion in and around GATE cumulonimbus clouds. The statistics are from a total of 104 km of flight legs, flown on six days in GATE, at altitudes from near the ...

Margaret A. LeMone; Edward J. Zipser

1980-11-01T23:59:59.000Z

254

Integration of Gd silicate/TiN gate stacks into SOI n-MOSFETs  

Science Conference Proceedings (OSTI)

In this work we describe the gate first integration of gadolinium silicate (GdSiO) high-k dielectrics and metal gate electrodes into SOI n-MOSFETs. Fully functional devices are achieved and compared to reference devices with standard SiO"2. Analysis ... Keywords: Gadolinium silicate, High temperature stable high-k dielectric, SOI n-MOSFET with high-k

M. Schmidt; A. Stefani; H. D. B. Gottlob; H. Kurz

2009-07-01T23:59:59.000Z

255

Energy-Delay Tradeoffs in Combinational Logic using Gate Sizing and Supply Voltage Optimization  

E-Print Network (OSTI)

Energy-Delay Tradeoffs in Combinational Logic using Gate Sizing and Supply Voltage Optimization savings to the energy profile of a circuit. These savings are obtained by using gate sizing and supply of energy to delay is derived from a linear delay model extended to multiple supplies. The optimizations

Nikolic, Borivoje

256

A satisfiability algorithm for constant depth boolean circuits with unbounded fan-in gates  

E-Print Network (OSTI)

Boolean Circuits with Unbounded Fan-In Gates A dissertationAC 0 by allowing unbounded fan-in M OD m 1 , . . . , M OD mSince each gate in ? has fan-in at most k and ? has depth D

Matthews, William Grant

2011-01-01T23:59:59.000Z

257

Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy  

E-Print Network (OSTI)

Fiber-Optic Stethoscope: A Cardiac Monitoring and Gating System for Magnetic Resonance Microscopy monitoring and gating purposes. The fiber-optic stethoscope system offers a novel approach to measuring) small enough for use on rats and mice. METHODS Fiber-Optic Stethoscope System Design As shown in the MR

258

Gate capacitance modeling and width-dependent performance of graphene nanoribbon transistors  

Science Conference Proceedings (OSTI)

The width-dependent performance of armchair GNRs-FETs is investigated by developing a fully analytical gate capacitance model based on effective mass approximation and semiclassical ballistic transport. The model incorporates the effects of edge bond ... Keywords: Analytic ballistic model, Gate capacitance, Graphene FETs, Graphene nanoribbons, Performance metrics

George S. Kliros

2013-12-01T23:59:59.000Z

259

3D modelling of an important symbol of the orthodox wooden churches: the imperial gates  

Science Conference Proceedings (OSTI)

The paper presents an on-going process to digitally reconstruct the Imperial Gates of the old Romanian orthodox churches scattered on a large geographical area in Transylvania. Due to the locations of the churches and to the indestructible character ... Keywords: 3d scanning, cultural heritage, imperial gates, orthodox wooden churches

Radu Moraru; Oana Gui; Ioan Chirila

2011-07-01T23:59:59.000Z

260

Oxidation pretreatment to reduce corrosion of 20%Cr-25%Ni-Nb stainless steel. II. Surface morphology and oxide characterization  

SciTech Connect

Improved corrosion behavior of 20%Cr-25%Ni-Nb steel resulting from a low pressure oxidation pretreatment in CO/sub 2/ has been related to changes in elemental composition and distribution in the oxide scale. Auger electron spectroscopy, secondary ion mass spectroscopy, electron microprobe, and X-ray diffraction techniques have been used to investigate the properties of the oxide scale formed on both untreated and pretreated specimens when oxidized at 823 K and 923 K in a CO/sub 2/-1%CO atmosphere. A sputter ion plating technique has been used to separate the oxide from the metal and the incorporation of chromium and silicon at the metal-oxide interface has been investigated at grain centers and grain boundaries by depth profiling. The improvement in oxide adhesion and oxidation rates, using data from Parts I and II of this study, is assessed in terms of oxide formation by solid-state displacement reactions.

Tempest, P.A.; Wild, R.K.

1988-10-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


261

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons  

DOE Patents (OSTI)

Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons is carried out over metal vanadate catalysts under oxidizing conditions. The vanadate catalysts are represented by the formulas M[sub 3](VO[sub 4])[sub 2] and MV[sub 2]O[sub 6], M representing Mg, Zn, Ca, Pb, or Cd. The reaction is carried out in the presence of oxygen, but the formation of oxygenate by-products is suppressed.

Kung, H.H.; Chaar, M.A.

1988-10-11T23:59:59.000Z

262

Oxidation of stepped Pt(111) studied by x-ray photoelectron spectroscopy and density functional theory  

SciTech Connect

In this comparative density functional theory and x-ray photoelectron spectroscopy study on the interaction of oxygen with stepped Pt(111) surfaces, we show that both the initial adsorption and oxidation occur at the steps rather than terraces. An equivalent behavior was observed for the oxide formation at higher chemical potentials, where, after the formation of a one-dimensional PtO{sub 2}-type oxide at the steps, similar oxide chains form on the (111) terraces, indicating the initial stages of bulk oxide formation.

Bandlow, Jochen; Kaghazchi, Payam; Jacob, Timo [Institut fuer Elektrochemie, Universitaet Ulm, Albert-Einstein-Allee 47, D-89069 Ulm (Germany); Papp, C.; Traenkenschuh, B.; Streber, R.; Lorenz, M. P. A.; Fuhrmann, T.; Steinrueck, H.-P. [Lehrstuhl fuer Physikalische Chemie II, Universitaet Erlangen-Nuernberg, Egerlandstr. 3, D-91058 Erlangen (Germany); Denecke, R. [Wilhelm-Ostwald-Institut fuer Physikalische und Theoretische Chemie, Universitaet Leipzig, Linnestr. 2, D-04103 Leipzig (Germany)

2011-05-01T23:59:59.000Z

263

PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health  

NLE Websites -- All DOE Office Websites (Extended Search)

MedGate Occupational MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) More Documents & Publications PIA - Savannah River Nuclear Solution (SRNS) Procurement Cycle System (PCS) PIA - Savannah River Nuclear Solutions (SRNS) Human Resource Management

264

Mechanism of activation gating in the full-length KcsA K[superscript +] channel  

Science Conference Proceedings (OSTI)

Using a constitutively active channel mutant, we solved the structure of full-length KcsA in the open conformation at 3.9 {angstrom}. The structure reveals that the activation gate expands about 20 {angstrom}, exerting a strain on the bulge helices in the C-terminal domain and generating side windows large enough to accommodate hydrated K{sup +} ions. Functional and spectroscopic analysis of the gating transition provides direct insight into the allosteric coupling between the activation gate and the selectivity filter. We show that the movement of the inner gate helix is transmitted to the C-terminus as a straightforward expansion, leading to an upward movement and the insertion of the top third of the bulge helix into the membrane. We suggest that by limiting the extent to which the inner gate can open, the cytoplasmic domain also modulates the level of inactivation occurring at the selectivity filter.

Uysal, Serdar; Cuello, Luis G.; Cortes, D. Marien; Koide, Shohei; Kossiakoff, Anthony A.; Perozo, Eduardo (UC)

2012-10-25T23:59:59.000Z

265

Polymer Formation at Surfaces  

Science Conference Proceedings (OSTI)

Facile Native Oxide Based Passivation of Silicon: An Unconventional Approach Hybrid Polymer-nanocrystal Multilayered Architectures for High-performance...

266

Scaling potential and MOSFET integration of thermally stable Gd silicate dielectrics  

Science Conference Proceedings (OSTI)

We investigate the potential of gadolinium silicate (GdSiO) as a thermally stable high-k gate dielectric in a gate first integration scheme. There silicon diffuses into gadolinium oxide (Gd"2O"3) from a silicon oxide (SiO"2) interlayer specifically prepared ... Keywords: Gate first integration, High-k dielectric, Rare earth silicate, Silicate formation

H. D. B. Gottlob; M. Schmidt; A. Stefani; M. C. Lemme; H. Kurz; I. Z. Mitrovic; W. M. Davey; S. Hall; M. Werner; P. R. Chalker; K. Cherkaoui; P. K. Hurley; J. Piscator; O. Engstrm; S. B. Newcomb

2009-07-01T23:59:59.000Z

267

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents (OSTI)

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

Benson, D.K.; Potter, T.F.

1994-06-07T23:59:59.000Z

268

Gas-controlled dynamic vacuum insulation with gas gate  

DOE Patents (OSTI)

Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

1994-06-07T23:59:59.000Z

269

A numerical and experimental study of in-situ NO formation in laminar NH3-seeded syngas diffusion flames.  

E-Print Network (OSTI)

?? Oxides of nitrogen formed during combustion are significant threats to our environment. They result in the formation of acid rain, smog, and depletion of (more)

Li, Miao

2012-01-01T23:59:59.000Z

270

A numerical and experimental study of in-situ NO formation in laminar NH3-seeded syngas diffusion flames.  

E-Print Network (OSTI)

??Oxides of nitrogen formed during combustion are significant threats to our environment. They result in the formation of "acid rain", smog, and depletion of the (more)

Li, Miao

2011-01-01T23:59:59.000Z

271

Lipid Oxidation Pathways  

Science Conference Proceedings (OSTI)

This book reviews state-of-the-art developments in the understanding of the oxidation of lipids and its connection with the oxidation of other biological molecules such as proteins and starch. Lipid Oxidation Pathways Hardback Books Health - Nutrition -

272

Selective methane oxidation over promoted oxide catalysts  

DOE Green Energy (OSTI)

Objective was to selectively oxidize methane to C{sub 2} hydrocarbons and to oxygenates, in particular formaldehyde and methanol, in high space time yields under relatively mild reaction conditions. Results in this document are reported under the headings: methane oxidation over silica, methane oxidation over Sr/La{sub 2}O{sub 3} catalysts, and oxidative coupling of methane over sulfate-doped Sr/La{sub 2}O{sub 3} catalysts. 24 refs, 10 figs, 4 tabs.

Klier, K.; Herman, R.G.

1993-12-31T23:59:59.000Z

273

The Gated X-ray Detector for the National Ignition Facility  

Science Conference Proceedings (OSTI)

Two new gated x-ray imaging cameras have recently been designed, constructed and delivered to the National Ignition Facility in Livermore, CA. These Gated X-ray Detectors are each designed to fit within an aluminum airbox with a large capacity cooling plane and are fitted with an array of environmental housekeeping sensors. These instruments are significant different from earlier generations of gated x-ray images due in parts to an innovative impendence matching scheme, advanced phosphor screens, pulsed phosphor circuits, precision assembly fixturing, unique system monitoring and complete remote computer control. Preliminary characterization has shown repeatable uniformity between imaging strips, improved spatial resolution and no detectable impendence reflections.

Oertel, J A; Barnes, C; Archuleta, T; Casper, L; Fatherley, V; Heinrichs, T; King, R; Landers, D; Lopez, F; Sanchez, P; Sandoval, G; Schrank, L; Walsh, P; Bell, P; Brown, M; Costa, R; Holder, J; Montalongo, S; Pederson, N

2006-05-18T23:59:59.000Z

274

Imperfect linear-optical photonic gates with number-resolving photodetection  

Science Conference Proceedings (OSTI)

We use the numerical optimization techniques of Uskov et al.[Phys. Rev. A 81, 012303 (2010)] to investigate the behavior of the success rates for Knill-Laflamme-Milburn-style [Knill et al., Nature (London) 409, 46 (2001)] two- and three-qubit entangling gates. The methods are first demonstrated at perfect fidelity and then extended to imperfect gates. We find that as the perfect fidelity condition is relaxed, the maximum attainable success rates increase in a predictable fashion depending on the size of the system, and we compare that rate of increase for several gates.

Smith, A. Matthew [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Air Force Research Laboratory, Information Directorate, Rome, New York 13440 (United States); Uskov, D. B. [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States); Department of Mathematics and Natural Sciences, Brescia University, Owensboro, Kentucky 42301 (United States); Ying, L. H.; Kaplan, L. [Department of Physics and Engineering Physics, Tulane University, New Orleans, Louisiana 70118 (United States)

2011-09-15T23:59:59.000Z

275

FT-IR photoacoustic spectroscopy investigation of oxidized wool  

SciTech Connect

The Fourier transform infrared photoacoustic spectra (FT-IR/PAS) of wool, shrink-resist treated wool and corona discharge oxidized wool are reported. Products of the oxidation of wool by dichloroisocyanuric acid are discussed. The FT-IR/PAS results indicate the formation of a sulphinic acid residue during the wool treatment.

McKenna, W.P.; Gale, D.J.; Rivett, D.E.; Eyring, E.M.

1985-02-01T23:59:59.000Z

276

Hydrous metal oxide catalysts for oxidation of hydrocarbons  

DOE Green Energy (OSTI)

This report describes work performed at Sandia under a CRADA with Shell Development of Houston, Texas aimed at developing hydrous metal oxide (HMO) catalysts for oxidation of hydrocarbons. Autoxidation as well as selective oxidation of 1-octene was studied in the presence of HMO catalysts based on known oxidation catalysts. The desired reactions were the conversion of olefin to epoxides, alcohols, and ketones, HMOs seem to inhibit autoxidation reactions, perhaps by reacting with peroxides or radicals. Attempts to use HMOs and metal loaded HMOs as epoxidation catalysts were unsuccessful, although their utility for this reaction was not entirely ruled out. Likewise, alcohol formation from olefins in the presence of HMO catalysts was not achieved. However, this work led to the discovery that acidified HMOs can lead to carbocation reactions of hydrocarbons such as cracking. An HMO catalyst containing Rh and Cu that promotes the reaction of {alpha}-olefins with oxygen to form methyl ketones was identified. Although the activity of the catalyst is relatively low and isomerization reactions of the olefin simultaneously occur, results indicate that these problems may be addressed by eliminating mass transfer limitations. Other suggestions for improving the catalyst are also made. 57 refs.

Miller, J.E.; Dosch, R.G.; McLaughlin, L.I. [Sandia National Labs., Albuquerque, NM (United States). Process Research Dept.

1993-07-01T23:59:59.000Z

277

Molecular beam deposition of LaAlO3 on silicon for sub-22nm CMOS technological nodes: Towards a perfect control of the oxide/silicon heterointerface  

Science Conference Proceedings (OSTI)

This work reports on the development of thin amorphous LaAlO"3 (LAO) layers on Si(001) for their integration as gate oxide in sub-22nm CMOS technologies. The crucial influence of the Si surface preparation is highlighted and an optimized surface preparation ... Keywords: Amorphous high-? dielectrics, Interfacial layer, LaAlO3, Molecular beam epitaxy, Surface preparation

S. Pelloquin; L. Becerra; G. Saint-Girons; C. Plossu; N. Baboux; D. Albertini; G. Grenet; G. Hollinger

2009-07-01T23:59:59.000Z

278

Chemical pathways for the formation of ammonia in Hanford wastes  

SciTech Connect

This report reviews chemical reactions leading to the formation of ammonia in Hanford wastes. The general features of the chemistry of the organic compounds in the Hanford wastes are briefly outlined. The radiolytic and thermal free radical reactions that are responsible for the initiation and propagation of the oxidative degradation reactions of the nitrogen-containing complexants, trisodium HEDTA and tetrasodium EDTA, are outlined. In addition, the roles played by three different ionic reaction pathways for the oxidation of the same compounds and their degradation products are described as a prelude to the discussion of the formation of ammonia. The reaction pathways postulated for its formation are based on tank observations, laboratory studies with simulated and actual wastes, and the review of the scientific literature. Ammonia derives from the reduction of nitrite ion (most important), from the conversion of organic nitrogen in the complexants and their degradation products, and from radiolytic reactions of nitrous oxide and nitrogen (least important). Reduction of nitrite ions is believed to be the most important source of ammonia. Whether by radiolytic or thermal routes, nitrite reduction reactions proceed through nitrogen dioxide, nitric oxide, the nitrosyl anion, and the hyponitrite anion. Nitrite ion is also converted into hydroxylamine, another important intermediate on the pathway to form ammonia. These reaction pathways additionally result in the formation of nitrous oxide and molecular nitrogen, whereas hydrogen formation is produced in a separate reaction sequence.

Stock, L.M.; Pederson, L.R.

1997-09-01T23:59:59.000Z

279

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy |  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy VIDEO: Bill Gates and Secretary Chu Chat on the Future of Energy March 5, 2012 - 1:24pm Addthis Secretary Chu sits down with Microsoft Founder and Chairman Bill Gates at the 2012 ARPA-E Energy Innovation Summit. April Saylor April Saylor Former Digital Outreach Strategist, Office of Public Affairs Last week, attendees at the 2012 ARPA-E Energy Innovation Summit heard from a variety of leaders from across the research, business and government sectors who spoke at the conference of nearly 2,400. These speakers, along with the startup companies and innovators in attendance, converged outside of Washington, D.C., to offer their take on how America can tackle our energy challenges. One of the top-level highlights from the Summit included this fireside chat

280

CNT-based gas ionizers with integrated MEMS gate for portable mass spectrometry applications  

E-Print Network (OSTI)

We report the fabrication and experimental characterization of a novel low-cost carbon nanotube (CNT)-based electron impact ionizer (EII) with integrated gate for portable mass spectrometry applications. The device achieves ...

Velasquez-Garcia, Luis Fernando

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


281

Diagnosis of Convective and Mesoscale Motions During Phase IH of Gate  

Science Conference Proceedings (OSTI)

Observational evidence from GATE suggests that a significant fraction of precipitation in tropical disturbances over the eastern Atlantic occurs beneath anvil-type mesoscale convective systems that are frequently associated with intense ...

Richard H. Johnson

1980-04-01T23:59:59.000Z

282

A Compact Propagation Delay Model for Deep-Submicron CMOS Gates including Crosstalk  

Science Conference Proceedings (OSTI)

We present a compact, fully physical, analytical model for the propagation delay and the output transition time of deep-submicron CMOS gates. The model accounts for crosstalk effects, short-circuit currents, the input-output coupling capacitance and ...

J. L. Rossell; J. Segura

2004-02-01T23:59:59.000Z

283

Lessons learned in the design and erection of box girder bridges from the West Gate collapse  

E-Print Network (OSTI)

The West Gate Bridge, intended to span the Yarra River in Australia, collapsed during its third year of construction in 1970. Investigation into the project revealed numerous issues in the bridge's design and construction. ...

Burton, Alia Christine

2007-01-01T23:59:59.000Z

284

The Moist Available Energy of a Conditionally Unstable Atmosphere. Part II: Further Analysis of GATE Data  

Science Conference Proceedings (OSTI)

The generalized convective available potential energy (GCAPE) observed during GATE has been analyzed using the Lagrangian algorithm of Lorenz, as modified by Randall and Wang. The effects of ice are included and are discussed in an Appendix. A ...

Junyi Wang; David A. Randall

1994-03-01T23:59:59.000Z

285

Low-power flip-flop using internal clock gating and adaptive body bias.  

E-Print Network (OSTI)

??This dissertation presents a new systematic approach to flip-flop design using Internal Clock Gating, (ICG), and Adaptive Body-Bias, (ABB), in order to reduce power consumption. (more)

Galvis, Jorge Alberto

2006-01-01T23:59:59.000Z

286

An Analysis of Convective System on a 100-km Scale during GATE  

Science Conference Proceedings (OSTI)

Usig data on a 100 km-scale from Phase III of GATE, the kinematic and thermodynamic, properties of the mesoscale environment in which convective clouds of varying intensities exist are investigated. Classifications into disturbed and suppressed ...

R. P. Pearce; J. Bayo Omotosho

1986-08-01T23:59:59.000Z

287

Electrical gating effects on the magnetic properties of (Ga,Mn)As diluted magnetic semiconductors  

E-Print Network (OSTI)

and Future Work . . . . . . . . . . . . . . . . . . . . . . . . 120 7.2.1 Voltage-pulse magnetization switching . . . . . . . . . . . . . 120 7.2.2 Electrolyte-gating . . . . . . . . . . . . . . . . . . . . . . . . . 121 A Fabrication steps 122 A.1 Processes...

Owen, Man Hon Samuel

2010-11-16T23:59:59.000Z

288

Determination of Mean Cumulus Cloud vorticity from GATE A/B-Scale Potential Vorticity Budget  

Science Conference Proceedings (OSTI)

The effects of cumulus clouds on the large-scale potential vorticity field are investigated using GATE data. Clouds are found to modify the mean potential vorticity field not only through vertical mixing but also through the generation of ...

Lawrence Cheng; Tsoi-Ching Yip; Han-Ru Cho

1980-04-01T23:59:59.000Z

289

Further Analysis of the Composite Wind and Thermodynamic Structure of the 12 September GATE Squall Line  

Science Conference Proceedings (OSTI)

An objective analysis technique is applied to the time-composite wind and thermodynamic fields of the 12 September GATE tropical squall line. Previous subjective analyses described by Gamache and Houze are confirmed and several new results are ...

John F. Gamache; Robert A. Houze Jr.

1985-08-01T23:59:59.000Z

290

Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures  

E-Print Network (OSTI)

The two-parameter Weibull distribution has been widely adopted to model the lifetime statistics of dielectric breakdown under constant voltage, but recent lifetime testing for high-k gate dielectrics has revealed a systematic ...

Le, Jia-Liang

291

All-optical logic gates based on vertical cavity semiconductor optical amplifiers  

E-Print Network (OSTI)

AND FIGURES Tables: Table 2.2.1: Truth Table for NOR-Gate SR13 Table 2.5.1: Truth Table for VCSOA SR Flip-Truth Table ..

Gauss, Veronica Andrea

2009-01-01T23:59:59.000Z

292

Explicit Simulation of Cumulus Ensembles with the GATE Phase III Data: Comparison with Observations  

Science Conference Proceedings (OSTI)

The macroscopic behavior of cumulus convection and its mesoscale organization during Phase III of the Global Atmospheric Research Program's (GARP) Atlantic Tropical Experiment (GATE) is simulated with a two-dimensional (2D) cloud ensemble model. ...

Kuan-Man Xu; David A. Randall

1996-12-01T23:59:59.000Z

293

Single electron effects and structural effects in ultrascaled silicon nanocrystal floating-gate memories  

Science Conference Proceedings (OSTI)

In this paper, we present a nanometer-sized floating-gate memory device, fabricated on silicon-on-insulator substrate and using silicon nanocrystals as storage nodes. Single electron charging and discharging phenomena occurring at room temperature will ...

G. Molas; B. De Salvo; G. Ghibaudo; D. Mariolle; A. Toffoli; N. Buffet; R. Puglisi; S. Lombardo; S. Deleonibus

2004-03-01T23:59:59.000Z

294

Multimodal Properties of the Surface-Wave Field Observed with Pitch-Roll Buoys During GATE  

Science Conference Proceedings (OSTI)

A sophisticated analysis technique is applied to a subset of pitch-roll buoy data collected by the research vessels Gilliss and Quadra during the GARP Tropical Atlantic Experiment (GATE) in September 1974. The procedure enables the examination of ...

Linda Marie Lawson; Robert Bryan Long

1983-03-01T23:59:59.000Z

295

A Systematic Search for Trapped Equatorial Waves in the GATE Velocity Data  

Science Conference Proceedings (OSTI)

Moored current meter data taken over a 60-day period during GATE (GARP Atlantic Tropical Experiment) near the equator at 28W, have been systematically searched for vertically propagating equatorially trapped waves. Three independent tests ...

A. M. Horigan; R. H. Weisberg

1981-04-01T23:59:59.000Z

296

The robustness of magic state distillation against errors in Clifford gates  

E-Print Network (OSTI)

Quantum error correction and fault-tolerance have provided the possibility for large scale quantum computations without a detrimental loss of quantum information. A very natural class of gates for fault-tolerant quantum computation is the Clifford gate set and as such their usefulness for universal quantum computation is of great interest. Clifford group gates augmented by magic state preparation give the possibility of simulating universal quantum computation. However, experimentally one cannot expect to perfectly prepare magic states. Nonetheless, it has been shown that by repeatedly applying operations from the Clifford group and measurements in the Pauli basis, the fidelity of noisy prepared magic states can be increased arbitrarily close to a pure magic state [1]. We investigate the robustness of magic state distillation to perturbations of the initial states to arbitrary locations in the Bloch sphere due to noise. Additionally, we consider a depolarizing noise model on the quantum gates in the decoding ...

Jochym-O'Connor, Tomas; Helou, Bassam; Laflamme, Raymond

2012-01-01T23:59:59.000Z

297

Mesoscale Motion Fields Associated with a Slowly Moving GATE Convective Band  

Science Conference Proceedings (OSTI)

The structure of the convective band of 14 September in the dense GATE observing array is determined using wind and thermodynamic data primarily from multiple aircraft penetrations, which are well distributed in the vertical and in time.

Edward J. Zipser; Rebecca J. Meitn; Margaret A. LeMone

1981-08-01T23:59:59.000Z

298

Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs  

Science Conference Proceedings (OSTI)

In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel-Poole (F-P) emission and Fowler-Nordheim (F-N) tunneling components. Schottky barrier height is ... Keywords: Fowler-Nordheim (F-N) tunneling, Frenkel-Poole (F-P) emission, Gate current, HfLaSiON, High-k, Schottky emission, Trap energy level, Trap-assisted tunneling (TAT)

Hyuk-Min Kwon; Won-Ho Choi; In-Shik Han; Min-Ki Na; Sang-Uk Park; Jung-Deuk Bok; Chang-Yong Kang; Byoung-Hun Lee; Raj Jammy; Hi-Deok Lee

2011-12-01T23:59:59.000Z

299

Association of State Dam Safety Officials (ASDSO)/EPRI Spillway Gate Workshop: January 5 & 6, 2000  

Science Conference Proceedings (OSTI)

Maintaining the integrity of dams at hydroelectric projects is essential to the protection of communities, the surrounding environment, and the power and resource management infrastructure. The Spillway Gate Workshop, sponsored by the Association of State Dam Safety Officials (ASDSO) and EPRI, and with funding from the Federal Emergency Management Agency (FEMA), focused on a critical aspect of the safety issues related to analysis, inspection, maintenance, and performance of spillway gates. The intent of...

2000-06-16T23:59:59.000Z

300

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications  

SciTech Connect

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

None

2011-07-31T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


301

Ca 2? permeation in cyclic nucleotide-gated channels  

E-Print Network (OSTI)

Cyclic nucleotide-gated (CNG) channels conduct Na ?, K ? and Ca2 ? currents under the control of cGMP and cAMP. Activation of CNG channels leads to depolarization of the membrane voltage and to a concomitant increase of the cytosolic Ca2 ? concentration. Several polypeptides were identified that constitute principal and modulatory subunits of CNG channels in both neurons and non-excitable cells, co-assembling to form a variety of heteromeric proteins with distinct biophysical properties. Since the contribution of each channel type to Ca2 ? signaling depends on its specific Ca2 ? conductance, it is necessary to analyze Ca2 ? permeation for each individual channel type. We have analyzed Ca2 ? permeation in all principal subunits of vertebrates and for a principal subunit from Drosophila melanogaster. We measured the fractional Ca2 ? current over the physiological range of Ca2 ? concentrations and found that Ca2 ? permeation is determined by subunit composition and modulated by membrane voltage and extracellular pH. Ca2 ? permeation is controlled by the Ca2?-binding affinity of the intrapore cation-binding site, which varies profoundly between members of the CNG channel family, and gives rise to a surprising diversity in the ability to generate Ca2 ? signals.

Claudia Dzeja; Volker Hagen; Stephan Frings

1999-01-01T23:59:59.000Z

302

Range-gated imaging for near-field target identification  

Science Conference Proceedings (OSTI)

The combination of two complementary technologies developed independently at Los Alamos National Laboratory (LANL) and Sandia National Laboratory (SNL) has demonstrated feasibility of target detection and image capture in a highly light-scattering, medium. The technique uses a compact SNL developed Photoconductive Semiconductor Switch/Laser Diode Array (PCSS/LDA) for short-range (distances of 8 to 10 m) large Field-Of-View (FOV) target illumination. Generation of a time-correlated echo signal is accomplished using a photodiode. The return image signal is recorded with a high-speed shuttered Micro-Channel-Plate Image Intensifier (MCPII), declined by LANL and manufactured by Philips Photonics. The MCPII is rated using a high-frequency impedance-matching microstrip design to produce 150 to 200 ps duration optical exposures. The ultra first shuttering producer depth resolution of a few inches along the optic axis between the MCPII and the target, producing enhanced target images effectively deconvolved from noise components from the scattering medium in the FOV. The images from the MCPII are recorded with an RS-170 Charge-Coupled-Device camera and a Big Sky, Beam Code, PC-based digitizer frame grabber and analysis package. Laser pulse data were obtained by the but jitter problems and spectral mismatches between diode spectral emission wavelength and MCPII photocathode spectral sensitivity prevented the capture of fast gating imaging with this demonstration system. Continued development of the system is underway.

Yates, G.J.; Gallegos, R.A.; McDonald, T.E. [and others

1996-12-01T23:59:59.000Z

303

Photo-oxidation catalysts  

DOE Patents (OSTI)

Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

2009-07-14T23:59:59.000Z

304

226 Formation of Aluminum Oxides on Carbon Nanotube Surface ...  

Science Conference Proceedings (OSTI)

... of LiMnxFe1-xPO4 Glass and Glass-Ceramics for Lithium Ion Battery .... and Comparing the Inhibition Effect of Chromate, Bromate and Molybdate on the...

305

THE FORMATION AND REACTIONS OF OXIDANTS IN WATER ICE .  

E-Print Network (OSTI)

??This dissertation investigates the chemistry in water ice of radical species, such as OH and O, produced in radio-frequency discharge. This novel method of studying (more)

Do, Nhut

2013-01-01T23:59:59.000Z

306

The Formation of Hydrogen Related Porosity by Double Oxide Film ...  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, 2014 TMS Annual Meeting & Exhibition. Symposium , Shape Casting: 5th International Symposium. Presentation Title, The...

307

OXIDES OF NITROGEN: FORMATION AND CONTROL IN RESOURCE RECOVERY FACILITIES  

E-Print Network (OSTI)

or RDF. NOx reduction by use of catalytic reduction and ammonia injection are clearly impractical research in this area, so that we can understand the principles of NOx reduction sufficiently to fill our·lined in cinerator by Hiraoka [2] reveals a reduction from 150 ppm NOx to below 100 ppm NOx (at 12% O2) by using

Columbia University

308

Transient Mechanism of Chromia Formation during Oxidation of ...  

Science Conference Proceedings (OSTI)

Author(s), Mahesh Brahmadesham Venkataraman, Raman R K Singh, Carl Koch, Prabhakar Singh. On-Site Speaker (Planned), Mahesh Brahmadesham...

309

Chemical pathways for the formation of ammonia in Hanford wastes  

SciTech Connect

This report reviews chemical reactions leading to the formation of ammonia in Hanford wastes. The general features of the chemistry of the organic compounds in the Hanford wastes are briefly outlined. The radiolytic and thermal free radical reactions that are responsible for the initiation and propagation of the oxidative degradation reactions of the nitrogen-containing complexants, trisodium HEDTA and tetrasodium EDTA, are outlined. In addition, the roles played by three different ionic reaction pathways for the oxidation of the same compounds and their degradation products are described as a prelude to the discussion of the formation of ammonia. The reaction pathways postulated for its formation are based on tank observations, laboratory studies with simulated and actual wastes, and the review of the scientific literature. Ammonia derives from the reduction of nitrite ion (most important), from the conversion of organic nitrogen in the complexants and their degradation products, and from radiolytic reactions of nitrous oxide and nitrogen (least important).

Stock, L.M.; Pederson, L.R.

1997-12-01T23:59:59.000Z

310

Hybrid Electric Power Train and Control Strategies Automotive Technology Education (GATE) Program  

Science Conference Proceedings (OSTI)

Plug-in hybrid electric vehicles (PHEV) offer societal benefits through their ability to displace the use of petroleum fuels. Petroleum fuels represent a polluting and politically destabilizing energy carrier. PHEV technologies can move transportation away from petroleum fuel sources by enabling domestically generated electricity and liquids bio-fuels to serve as a carrier for transportation energy. Additionally, the All-Electric-Range (AER) offered by PHEVs can significantly reduce demand for expensive and polluting liquid fuels. The GATE funding received during the 1998 through 2004 funding cycle by the UC Davis Hybrid Electric Vehicle Center (HEVC) was used to advance and train researchers in PHEV technologies. GATE funding was used to construct a rigorous PHEV curriculum, provide financial support for HEVC researchers, and provide material support for research efforts. A rigorous curriculum was developed through the UC Davis Mechanical and Aeronautical Engineering Department to train HEVC researchers. Students' research benefited from this course work by advancing the graduate student researchers' understanding of key PHEV design considerations. GATE support assisted HEVC researchers in authoring technical articles and producing patents. By supporting HEVC researchers multiple Master's theses were written as well as journal articles and publications. The topics from these publications include Continuously Variable Transmission control strategies and PHEV cross platform controls software development. The GATE funding has been well used to advance PHEV systems. The UC Davis Hybrid Electric Vehicle Center is greatly appreciative for the opportunities GATE funding provided. The goals and objectives for the HEVC GATE funding were to nourish engineering research in PHEV technologies. The funding supplied equipment needed to allow researchers to investigate PHEV design sensitivities and to further optimize system components. Over a dozen PHEV researchers benefited from the GATE funding and produced journal articles and intellectual property as a result. The remainder of this document outlines the productivity resulting from GATE funds. The topics include the following: GATE Hybrid Vehicle Systems Related Courses; Students Supported; Publications; and Patents. A discussion regarding the HEVC accomplishments with respect to the GATE funding goals is provided in the conclusion.

Andrew Frank

2006-05-31T23:59:59.000Z

311

Method of physical vapor deposition of metal oxides on semiconductors  

DOE Patents (OSTI)

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Norton, David P. (Knoxville, TN)

2001-01-01T23:59:59.000Z

312

Multifunctional Oxides: Multifunctional Oxides: Synthesis and ...  

Science Conference Proceedings (OSTI)

Using Ultrafast Optical Spectroscopy to Explore Magneoelectric Coupling in Multiferroic Oxide Heterostructures: Y-M Sheu1; S. Trugman1; L Yan1; C-P Chuu 1;...

313

Asphalt Oxidation Kinetics and Pavement Oxidation Modeling  

E-Print Network (OSTI)

Most paved roads in the United States are surfaced with asphalt. These asphalt pavements suffer from fatigue cracking and thermal cracking, aggravated by the oxidation and hardening of asphalt. This negative impact of asphalt oxidation on pavement performance has not been considered adequately in pavement design. Part of the reason is that the process of asphalt oxidation in pavement is not well understood. This work focused on understanding the asphalt oxidation kinetics and on developing pavement oxidation model that predicts asphalt oxidation and hardening in pavement under environmental conditions. A number of asphalts were studied in laboratory condition. Based on kinetics data, a fast-rate ? constant-rate asphalt oxidation kinetics model was developed to describe the early nonlinear fast-rate aging period and the later constant-rate period of asphalt oxidation. Furthermore, reaction kinetics parameters for the fast-rate and constant-rate reactions were empirically correlated, leading to a simplified model. And the experimental effort and time to obtain these kinetics parameters were significantly reduced. Furthermore, to investigate the mechanism of asphalt oxidation, two antioxidants were studied on their effectiveness. Asphalt oxidation was not significantly affected. It was found that evaluation of antioxidant effectiveness based on viscosity only is not reliable. The asphalt oxidation kinetics model was incorporated into the pavement oxidation model that predicts asphalt oxidation in pavement. The pavement oxidation model mimics the oxidation process of asphalt in real mixture at pavement temperatures. A new parameter, diffusion depth, defined the oxygen diffusion region in the mastic. A field calibration factor accounted for the factors not considered in the model such as the effect of small aggregate particles on oxygen diffusion. Carbonyl area and viscosity of binders recovered from field cores of three pavements in Texas were measured and were used for model calibration and validation. Results demonstrated that the proposed model estimates carbonyl growth over time in pavement, layer-by-layer, quite well. Finally, this work can be useful for incorporating asphalt oxidation into a pavement design method that can predict pavement performance with time and for making strategic decisions such as optimal time for maintenance treatments.

Jin, Xin

2012-05-01T23:59:59.000Z

314

GATE Air-Sea Interaction. I: Numerical Model Calculation of Local Sea-Surface Temperatures on Diurnal Time Scales Using the GATE Version III Gridded Global Data Set  

Science Conference Proceedings (OSTI)

The numerical model of air-sea interaction previously described in Jacobs (1978), Pandolfo and Jacobs (1972) and Pandolfo (1969) is inserted at one horizontal grid point in the GATE III Gridded Global Data Set to calculate a model-generated, ...

P. S. Brown Jr.; J. P. Pandolfo; S. J. Thoren

1982-05-01T23:59:59.000Z

315

Enthalpies of Formation of Rare-Earth Orthovanadates, REVO4  

Science Conference Proceedings (OSTI)

Rare earth orthovanadates, REVO4, having the zircon structure, form a series of materials interesting for magnetic, optical, sensor, and electronic applications. Enthalpies of formation of REVO4 compounds (RE=Sc, Y, Ce Nd, Sm Tm, Lu) were determined by oxide melt solution calorimetry in lead borate (2PbO {center_dot} 2B2O3) solvent at 1075 K. The enthalpies of formation from oxide components become more negative with increasing RE ionic radius. This trend is similar to that obtained for the rare earth phosphates.

Dorogova, M. [University of California, Davis; Navrotsky, Alexandra [University of California, Davis; Boatner, Lynn A [ORNL

2007-01-01T23:59:59.000Z

316

Scanning transmission electron microscopy of gate stacks with HfO2 dielectrics and TiN electrodes  

E-Print Network (OSTI)

Scanning transmission electron microscopy of gate stacksEELS) in scanning transmission electron microscopy were usedWe use scanning transmission electron microscopy (STEM)

Agustin, Melody P.; Fonseca, Leo R. C.; Hooker, Jacob C.; Stemmer, Susanne

2005-01-01T23:59:59.000Z

317

Transition metal oxides deposited on rhodium and platinum: Surface chemistry and catalysis  

DOE Green Energy (OSTI)

The surface chemistry and catalytic reactivity of transition metal oxides deposited on Rh and Pt substrates has been examined in order to establish the role of oxide-metal interactions in influencing catalytic activity. The oxides investigated included titanium oxide (TiOx), vanadium oxide (VOx), iron oxide (FeOx), zirconium oxide (ZrOx), niobium oxide (NbOx), tantalum oxide (TaOx), and tungsten oxide (WOx). The techniques used to characterize the sample included AES, XPS, LEED, TPD, ISS, and STM. After characterization of the surface in UHV, the sample was enclosed in an atmospheric reaction cell to measure the influence of the oxide deposits on the catalytic activity of the pure metal for CO and CO{sub 2} hydrogenation. The oxide deposits were found to strongly enhance the reactivity of the Rh foil. The rates of methane formation were promoted by up to 15 fold with the maximum in rate enhancement occurring at oxide coverages of approximately 0.5 ML. TiOx TaOx, and NbOx were the most effective promoters and were stable in the highest oxidation states during both reactions (compared to VOx, WOx, and FeOx). The trend in promoter effectiveness was attributed to the direct relationship between oxidation state and Lewis acidity. Bonding at the metal oxide/metal interface between the oxygen end of adsorbed CO and the Lewis acidic oxide was postulated to facilitate C-O bond dissociation and subsequent hydrogenation. 192 refs.

Boffa, A.B. [Univ. of California, Berkeley, CA (United States). Dept. of Chemistry]|[Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.

1994-07-01T23:59:59.000Z

318

Eye tracking and gating system for proton therapy of orbital tumors  

Science Conference Proceedings (OSTI)

Purpose: A new motion-based gated proton therapy for the treatment of orbital tumors using real-time eye-tracking system was designed and evaluated. Methods: We developed our system by image-pattern matching, using a normalized cross-correlation technique with LabVIEW 8.6 and Vision Assistant 8.6 (National Instruments, Austin, TX). To measure the pixel spacing of an image consistently, four different calibration modes such as the point-detection, the edge-detection, the line-measurement, and the manual measurement mode were suggested and used. After these methods were applied to proton therapy, gating was performed, and radiation dose distributions were evaluated. Results: Moving phantom verification measurements resulted in errors of less than 0.1 mm for given ranges of translation. Dosimetric evaluation of the beam-gating system versus nongated treatment delivery with a moving phantom shows that while there was only 0.83 mm growth in lateral penumbra for gated radiotherapy, there was 4.95 mm growth in lateral penumbra in case of nongated exposure. The analysis from clinical results suggests that the average of eye movements depends distinctively on each patient by showing 0.44 mm, 0.45 mm, and 0.86 mm for three patients, respectively. Conclusions: The developed automatic eye-tracking based beam-gating system enabled us to perform high-precision proton radiotherapy of orbital tumors.

Shin, Dongho; Yoo, Seung Hoon; Moon, Sung Ho; Yoon, Myonggeun; Lee, Se Byeong; Park, Sung Yong [Proton Therapy Center, National Cancer Center, Goyang, Gyeonggi 410-769 (Korea, Republic of); Department of Radiation Oncology, CHA Bundang Medical Center, CHA University, Seongnam, Gyeonggi 463-712 (Korea, Republic of); Proton Therapy Center, National Cancer Center, Goyang, Gyeonggi 410-769 (Korea, Republic of); Department of Radiological Science, Korea University, Seoul 136-703 (Korea, Republic of); Proton Therapy Center, National Cancer Center, Goyang, Gyeonggi 410-769 (Korea, Republic of); Proton Therapy Center, McLaren Cancer Institute, Flint, Michigan 48532 (United States)

2012-07-15T23:59:59.000Z

319

Demonstration of an all-optical quantum controlled-NOT gate  

E-Print Network (OSTI)

The promise of tremendous computational power, coupled with the development of robust error-correcting schemes, has fuelled extensive efforts to build a quantum computer. The requirements for realizing such a device are confounding: scalable quantum bits (two-level quantum systems, or qubits) that can be well isolated from the environment, but also initialized, measured and made to undergo controllable interactions to implement a universal set of quantum logic gates. The usual set consists of single qubit rotations and a controlled-NOT (CNOT) gate, which flips the state of a target qubit conditional on the control qubit being in the state 1. Here we report an unambiguous experimental demonstration and comprehensive characterization of quantum CNOT operation in an optical system. We produce all four entangled Bell states as a function of only the input qubits' logical values, for a single operating condition of the gate. The gate is probabilistic (the qubits are destroyed upon failure), but with the addition of linear optical quantum non-demolition measurements, it is equivalent to the CNOT gate required for scalable all-optical quantum computation.

J L O'Brien; G J Pryde; A G White; T C Ralph; D Branning

2004-03-08T23:59:59.000Z

320

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

SciTech Connect

This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davis??s existing GATE centers have become the campus??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

Erickson, Paul

2012-05-31T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


321

Water gate array for current flow or tidal movement pneumatic harnessing system  

DOE Patents (OSTI)

The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

Gorlov, Alexander M. (Brookline, MA)

1991-01-01T23:59:59.000Z

322

Tropical Cyclone Formation  

Science Conference Proceedings (OSTI)

The physics of tropical cyclone formation is not well understood, and more is known about the mature hurricane than the formative mechanisms that produce it. It is believed part of the reason for this can be traced to insufficient upper-level ...

Michael T. Montgomery; Brian F. Farrell

1993-01-01T23:59:59.000Z

323

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

324

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders Day Two of 2012 ARPA-E Summit Will Feature Bill Gates, Secretary Chu and America's Top Energy Thought Leaders February 28, 2012 - 7:02am Addthis Washington D.C. - This week, the Advanced Research Projects Agency - Energy (ARPA-E) is hosting its third annual Energy Innovation Summit, which is designed to unite key players from all sectors of America's energy innovation community to share ideas for how to lead the world in the development of next generation clean energy technologies, develop our nation's energy resources, and build an American economy that lasts. Tomorrow's full agenda with speakers is below. For specific press requests, please contact Keri Fulton at keri.fulton@hq.doe.gov.

325

ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Announces 2012 Energy Innovation Summit Featuring Bill Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott ARPA-E Announces 2012 Energy Innovation Summit Featuring Bill Gates, Fred Smith and Lee Scott September 9, 2011 - 9:25am Addthis New York, NY - The U.S. Department of Energy's Advanced Research Projects Agency - Energy (ARPA-E) Director, Arun Majumdar, announced yesterday that the Agency will hold its third annual ARPA-E Energy Innovation Summit from February 27 - 29, 2012 at the Gaylord Convention Center just outside Washington, D.C. Bill Gates, founder and chairman of Microsoft; Fred Smith, chairman, president and CEO of FedEx; and Lee Scott, former CEO of Wal-Mart; will join Secretary Chu and Director Majumdar as distinguished keynote speakers. "After two successful Summits, I'm excited to once again bring some of

326

Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate  

DOE Patents (OSTI)

Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

Sappey, Andrew D. (Golden, CO)

1998-04-14T23:59:59.000Z

327

Graphene Enabled Low-Control Quantum Gates between Static and Mobile Spins  

E-Print Network (OSTI)

We show that the feature of Klein tunneling makes graphene a unique interface for implementing low control quantum gates between static and mobile qubits. A ballistic electron spin is considered as the mobile qubit, while the static qubit is the electronic spin of a quantum dot fixed in a graphene nanoribbon. Scattering is the low control mechanism of the gate, which, in other systems, is really difficult to exploit because of both back-scattering and the momentum dependence of scattering. We find that Klein tunneling enables the implementation of quasi-deterministic quantum gates regardless of the momenta or the shape of the wave function of the incident electron. The Dirac equation is used to describe the system in the one particle approximation with the interaction between the static and the mobile spins modelled by a Heisenberg Hamiltonian. Furthermore, we discuss an application of this model to generate entanglement between two well separated static qubits.

G. Cordourier-Maruri; Y. Omar; R. de Coss; S. Bose

2013-06-30T23:59:59.000Z

328

High-fidelity CZ gate for resonator-based superconducting quantum computers  

E-Print Network (OSTI)

A possible building block for a scalable quantum computer has recently been demonstrated [M. Mariantoni et al., Science 334, 61 (2011)]. This architecture consists of superconducting qubits capacitively coupled both to individual memory resonators as well as a common bus. In this work we study a natural primitive entangling gate for this and related resonator-based architectures, which consists of a CZ operation between a qubit and the bus. The CZ gate is implemented with the aid of the non-computational qubit |2> state [F. W. Strauch et al., Phys. Rev. Lett. 91, 167005 (2003)]. Assuming phase or transmon qubits with 300 MHz anharmonicity, we show that by using only low frequency qubit-bias control it is possible to implement the qubit-bus CZ gate with 99.9% (99.99%) fidelity in about 17ns (23ns) with a realistic two-parameter pulse profile, plus two auxiliary z rotations. The fidelity measure we refer to here is a state-averaged intrinsic process fidelity, which does not include any effects of noise or decoherence. These results apply to a multi-qubit device that includes strongly coupled memory resonators. We investigate the performance of the qubit-bus CZ gate as a function of qubit anharmonicity, indentify the dominant intrinsic error mechanism and derive an associated fidelity estimator, quantify the pulse shape sensitivity and precision requirements, simulate qubit-qubit CZ gates that are mediated by the bus resonator, and also attempt a global optimization of system parameters including resonator frequencies and couplings. Our results are relevant for a wide range of superconducting hardware designs that incorporate resonators and suggest that it should be possible to demonstrate a 99.9% CZ gate with existing transmon qubits, which would constitute an important step towards the development of an error-corrected superconducting quantum computer.

Joydip Ghosh; Andrei Galiautdinov; Zhongyuan Zhou; Alexander N. Korotkov; John M. Martinis; Michael R. Geller

2013-01-08T23:59:59.000Z

329

The robustness of magic state distillation against errors in Clifford gates  

E-Print Network (OSTI)

Quantum error correction and fault-tolerance have provided the possibility for large scale quantum computations without a detrimental loss of quantum information. A very natural class of gates for fault-tolerant quantum computation is the Clifford gate set and as such their usefulness for universal quantum computation is of great interest. Clifford group gates augmented by magic state preparation give the possibility of simulating universal quantum computation. However, experimentally one cannot expect to perfectly prepare magic states. Nonetheless, it has been shown that by repeatedly applying operations from the Clifford group and measurements in the Pauli basis, the fidelity of noisy prepared magic states can be increased arbitrarily close to a pure magic state [1]. We investigate the robustness of magic state distillation to perturbations of the initial states to arbitrary locations in the Bloch sphere due to noise. Additionally, we consider a depolarizing noise model on the quantum gates in the decoding section of the distillation protocol and demonstrate its effect on the convergence rate and threshold value. Finally, we establish that faulty magic state distillation is more efficient than fault-tolerance-assisted magic state distillation at low error rates due to the large overhead in the number of quantum gates and qubits required in a fault-tolerance architecture. The ability to perform magic state distillation with noisy gates leads us to conclude that this could be a realistic scheme for future small-scale quantum computing devices as fault-tolerance need only be used in the final steps of the protocol.

Tomas Jochym-O'Connor; Yafei Yu; Bassam Helou; Raymond Laflamme

2012-05-30T23:59:59.000Z

330

Formation of alcohol conversion catalysts  

DOE Patents (OSTI)

The method of the present invention involves a composition containing an intimate mixture of (a) metal oxide support particles and (b) a catalytically active metal oxide from Groups VA, VIA, or VIIA, its method of manufacture, and its method of use for converting alcohols to aldehydes. During the conversion process, catalytically active metal oxide from the discrete catalytic metal oxide particles migrates to the oxide support particles and forms a monolayer of catalytically active metal oxide on the oxide support particle to form a catalyst composition having a higher specific activity than the admixed particle composition.

Wachs, Israel E. (Bridgewater, NJ); Cai, Yeping (Louisville, KY)

2001-01-01T23:59:59.000Z

331

Effect of Temperature on GaGdO/GaN Metal Oxide Semiconductor Field Effect Transistors  

SciTech Connect

GaGdO was deposited on GaN for use as a gate dielectric in order to fabricate a depletion metal oxide semiconductor field effect transistor (MOSFET). This is the fmt demonstration of such a device in the III-Nitride system. Analysis of the effect of temperature on the device shows that gate leakage is significantly reduced at elevated temperature relative to a conventional metal semiconductor field effeet transistor (MESFET) fabricated on the same GaN layer. MOSFET device operation in fact improved upon heating to 400 C. Modeling of the effeet of temperature on contact resistance suggests that the improvement is due to a reduction in the parasitic resistances present in the device.

Abernathy, C.R.; Baca, A.; Chu, S.N.G.; Hong, M.; Lothian, J.R.; Marcus, M.A.; Pearton, S.J.; Ren, F.; Schurman, M.J.

1998-10-14T23:59:59.000Z

332

Partial oxidation catalyst  

DOE Patents (OSTI)

A two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion. The dehydrogenation portion is a group VIII metal and the oxide-ion conducting portion is selected from a ceramic oxide crystallizing in the fluorite or perovskite structure. There is also disclosed a method of forming a hydrogen rich gas from a source of hydrocarbon fuel in which the hydrocarbon fuel contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion at a temperature not less than about 400.degree. C. for a time sufficient to generate the hydrogen rich gas while maintaining CO content less than about 5 volume percent. There is also disclosed a method of forming partially oxidized hydrocarbons from ethanes in which ethane gas contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion for a time and at a temperature sufficient to form an oxide.

Krumpelt, Michael (Naperville, IL); Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Doshi, Rajiv (Downers Grove, IL)

2000-01-01T23:59:59.000Z

333

Single-photon two-qubit SWAP gate for entanglement manipulation  

E-Print Network (OSTI)

A SWAP operation between different types of qubits of single photons is essential for manipulating hyperentangled photons for a variety of applications. We have implemented an efficient SWAP gate for the momentum and polarization degrees of freedom of single photons. The SWAP gate was utilized in a single-photon two-qubit quantum logic circuit to deterministically transfer momentum entanglement between a pair of down-converted photons to polarization entanglement. The polarization entanglement thus obtained violates Bell's inequality by more than 150 standard deviations.

Marco Fiorentino; Taehyun Kim; Franco N. C. Wong

2004-07-16T23:59:59.000Z

334

A Radar Study of Convective Cells in Mesoscale Systems in GATE. Part II: Life Cycles of Convective Cells  

Science Conference Proceedings (OSTI)

This is Part II of a two-part paper describing the vertical profile of radar reflectivity in GATE convective cells. Time-height radar life histories for 42 cells over three GATE days are examined, using data from the Quadra radar with 5-minute ...

Edward J. Szoke; Edward J. Zipser

1986-01-01T23:59:59.000Z

335

Recovery of negative bias temperature instability induced degradation of p-MOSFETs with SiON gate dielectric  

Science Conference Proceedings (OSTI)

This paper investigates the recovery property of p-MOSFETs with an ultra-thin SiON gate dielectric which are degraded by negative bias temperature instability (NBTI). The experimental results indicate that the recovery of the NBTI degradation occurs ... Keywords: Gate dielectric, MOSFET, Negative bias temperature instability (NBTI), Reliability, Silicon oxynitride

Y. D. Kim; S. U. Han; H. S. Kang; B. K. Kang

2008-09-01T23:59:59.000Z

336

The progress and challenges of threshold voltage control of high-k/metal-gated devices for advanced technologies (Invited Paper)  

Science Conference Proceedings (OSTI)

This paper discusses recent progress in and challenges of threshold voltage control for advanced high-k/metal-gated (HKMG) devices. It presents the impact on threshold voltage (V"t) control of incorporating La and Al into HKMG devices. A dipole moment ... Keywords: CMOS, Capping layer, EOT, High-k, Metal gate, Threshold voltage control

Hsing-Huang Tseng; Paul Kirsch; C. S. Park; Gennadi Bersuker; Prashant Majhi; Muhammad Hussain; Raj Jammy

2009-07-01T23:59:59.000Z

337

Crystal Structure of the Mammalian GIRK2 KplusChannel and Gating Regulation by G Proteins PIP2 and Sodium  

SciTech Connect

G protein-gated K{sup +} channels (Kir3.1--Kir3.4) control electrical excitability in many different cells. Among their functions relevant to human physiology and disease, they regulate the heart rate and govern a wide range of neuronal activities. Here, we present the first crystal structures of a G protein-gated K{sup +} channel. By comparing the wild-type structure to that of a constitutively active mutant, we identify a global conformational change through which G proteins could open a G loop gate in the cytoplasmic domain. The structures of both channels in the absence and presence of PIP{sub 2} suggest that G proteins open only the G loop gate in the absence of PIP{sub 2}, but in the presence of PIP{sub 2} the G loop gate and a second inner helix gate become coupled, so that both gates open. We also identify a strategically located Na{sup +} ion-binding site, which would allow intracellular Na{sup +} to modulate GIRK channel activity. These data provide a structural basis for understanding multiligand regulation of GIRK channel gating.

M Whorton; R MacKinnon

2011-12-31T23:59:59.000Z

338

A field programmable gate array unit for the diagnosis and control of neoclassical tearing modes on MAST  

E-Print Network (OSTI)

A field programmable gate array unit for the diagnosis and control of neoclassical tearing modes OF SCIENTIFIC INSTRUMENTS 83, 10E312 (2012) A field programmable gate array unit for the diagnosis and control, University of York, York YO10 5DD, United Kingdom 2 EURATOM/CCFE Fusion Association, Culham Science Centre

339

Open-ended Taiwan history and spirit-oriented cultural politics : a study of Cloud Gate's works in the postcolonial and global age  

E-Print Network (OSTI)

The Novel and Literary History (1934-41). The BakhtinCorporealizing Taiwans History: Cloud Gates Portrait ofZhang 116-135. ---. Dance History and Cultural Politics: A

Wei, Ling-Chen

2010-01-01T23:59:59.000Z

340

Selective Electrocatalytic Activity of Ligand Stabilized Copper Oxide Nanoparticles  

DOE Green Energy (OSTI)

Ligand stabilization can influence the surface chemistry of Cu oxide nanoparticles (NPs) and provide unique product distributions for electrocatalytic methanol (MeOH) oxidation and CO{sub 2} reduction reactions. Oleic acid (OA) stabilized Cu{sub 2}O and CuO NPs promote the MeOH oxidation reaction with 88% and 99.97% selective HCOH formation, respectively. Alternatively, CO{sub 2} is the only reaction product detected for bulk Cu oxides and Cu oxide NPs with no ligands or weakly interacting ligands. We also demonstrate that OA stabilized Cu oxide NPs can reduce CO{sub 2} into CO with a {approx}1.7-fold increase in CO/H{sub 2} production ratios compared to bulk Cu oxides. The OA stabilized Cu oxide NPs also show 7.6 and 9.1-fold increases in CO/H{sub 2} production ratios compared to weakly stabilized and non-stabilized Cu oxide NPs, respectively. Our data illustrates that the presence and type of surface ligand can substantially influence the catalytic product selectivity of Cu oxide NPs.

Kauffman, Douglas R.; Ohodnicki, Paul R.; Kail, Brian W; Matranga, Christopher

2011-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


341

A CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates  

E-Print Network (OSTI)

This thesis describes a CAD tool for the power estimation of CMOS, BiCMOS and BiNMOS gates. Using analytical models for the transient behavior of the gates, accurate estimates of the power dissipated by each type of gate during a typical transition are arrived at. The values thus obtained show a very good agreement with those obtained from HSPICE simulations. A detailed transient analysis is performed on the BiCMOS gate in particular and a expression for the current response is derived. This piecewise expression accurately models the current behavior of the BICMOS gate taking into account all important second-order effects. The current expression obtained enables a quick and accurate estimate of the power dissipation.

Islam, Kazi Inamul

1995-01-01T23:59:59.000Z

342

A hot oxidant, 3-NO[subscript 2]Y[subscript 122] radical, unmasks conformational gating in reductase  

E-Print Network (OSTI)

Escherichia coli ribonucleotide reductase is an ?2?2 complex that catalyzes the conversion of nucleotides to deoxynucleotides and requires a diferric-tyrosyl radical (Y[superscript ]) cofactor to initiate catalysis. The ...

Yokoyama, Kenichi

343

Scanning gate microscopy on graphene: charge inhomogeneity and extrinsic doping This article has been downloaded from IOPscience. Please scroll down to see the full text article.  

E-Print Network (OSTI)

mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene, USA. graphene field effect transistor (GFET), a voltage applied to a gate (capacitively coupled

Chen, Yong P.

344

Barium oxide, calcium oxide, magnesia, and alkali oxide free glass  

DOE Patents (OSTI)

A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

2013-09-24T23:59:59.000Z

345

Numerical analysis of the heat transfer for packing design of cryogenic gate valve  

Science Conference Proceedings (OSTI)

The packing, among the components comprising the gate valve, is used to sustain the airtightness and the study on change of shape or pattern has been carried out to maximize the functions, but the study on changing the location or the size of the packing ... Keywords: cryogenic, heat transfer, liquefied natural gas, numerical analysis, packing

Si Pom Kim; Rock Won Jeon; Il Ju Hwang; Jae Hoon Lee; Won Heaop Shin

2012-04-01T23:59:59.000Z

346

Method and system for measuring gate valve clearances and seating force  

DOE Patents (OSTI)

Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

1996-01-01T23:59:59.000Z

347

Guardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism  

E-Print Network (OSTI)

of nuclear theft in Russia, Pakistan, and from HEU-fueled research reactors are highlighted. SecondGuardians at the Gates of Hell Estimating the Risk of Nuclear Theft and Terrorism ­ and Identifying the Highest-Priority Risks of Nuclear Theft by Matthew Bunn SB and SM, Political Science, MIT, 1985 SUBMITTED

de Weck, Olivier L.

348

The effect of interfacial layer properties on the performance of Hf-based gate stack devices  

E-Print Network (OSTI)

-k-induced oxygen deficiency in the IL consistent with the electrical data. It is concluded that high temperature. © 2006 American Institute of Physics. DOI: 10.1063/1.2362905 I. INTRODUCTION To sustain the historical rate of transistor scaling, the conventional SiO2 gate dielectric layer must be replaced

Pennycook, Steve

349

Numerical Modeling of a Line of Towering Cumulus on Day 226 of GATE  

Science Conference Proceedings (OSTI)

A three-dimensional numerical model with warm rain bulk cloud physics is used to investigate the shallow convection observed on day 226 of GATE. This convection had cloud tops at 3.0 km, cloud bases at 0.4 km and approximately 0.1 cm of rain at ...

Frank B. Lipps; Richard S. Hemler

1988-09-01T23:59:59.000Z

350

Case Studies on Variation Tolerant and Low Power Design Using Planar Asymmetric Double Gate Transistor  

E-Print Network (OSTI)

In nanometer technologies, process variation control and low power have emerged as the first order design goal after high performance. Process variations cause high variability in performance and power consumption of an IC, which affects the overall yield. Short channel effects (SCEs) deteriorate the MOSFET performance and lead to higher leakage power. Double gate devices suppress SCEs and are potential candidates for replacing Bulk technology in nanometer nodes. Threshold voltage control in planar asymmetric double gate transistor (IGFET) using a fourth terminal provides an effective means of combating process variations and low power design. In this thesis, using various case studies, we analyzed the suitability of IGFET for variation control and low power design. We also performed an extensive comparison between IGFET and Bulk for reducing variability, improving yield and leakage power reduction using power gating. We also proposed a new circuit topology for IGFET, which on average shows 33.8 percent lower leakage and 34.9 percent lower area at the cost of 2.8 percent increase in total active mode power, for basic logic gates. Finally, we showed a technique for reducing leakage of minimum sized devices designed using new circuit topology for IGFET.

Singh, Amrinder

2010-08-01T23:59:59.000Z

351

Investigating physical and chemical changes in high-k gate stacks using nanoanalytical electron microscopy  

Science Conference Proceedings (OSTI)

The thermal budget involved in processing high-k gate stacks can cause undesirable physical and chemical changes which limit device performance. The transmission electron microscope and associated analytical techniques provide a way of investigating ... Keywords: Electron energy loss near edge structure, Electron energy loss spectroscopy, High-k dielectrics, Nanoanalytical electron microscopy

A. J. Craven; M. MacKenzie; D. W. McComb; F. T. Docherty

2005-06-01T23:59:59.000Z

352

Analyzing Combined Impacts of Parameter Variations and BTI in Nano-scale Logical Gates  

E-Print Network (OSTI)

Analyzing Combined Impacts of Parameter Variations and BTI in Nano-scale Logical Gates Seyab Khan conclusions. 2 Background and Analysis Framework Fig. 1(a) shows the threshold voltage increment (Vth) due variation, delay model, and presents the analysis framework. First MEDIAN Workshop 2012 7 #12;2 Seyab Khan

Hamdioui, Said

353

A quantum logic gate between a solid-state quantum bit and a photon  

E-Print Network (OSTI)

Integrated quantum photonics provides a promising route towards scalable solid-state implementations of quantum networks, quantum computers, and ultra-low power opto-electronic devices. A key component for many of these applications is the photonic quantum logic gate, where the quantum state of a solid-state quantum bit (qubit) conditionally controls the state of a photonic qubit. These gates are crucial for development of robust quantum networks, non-destructive quantum measurements, and strong photon-photon interactions. Here we experimentally realize a quantum logic gate between an optical photon and a solid-state qubit. The qubit is composed of a quantum dot (QD) strongly coupled to a nano-cavity, which acts as a coherently controllable qubit system that conditionally flips the polarization of a photon on picosecond timescales, implementing a controlled-NOT (cNOT) gate. Our results represent an important step towards solid-state quantum networks and provide a versatile approach for probing QD-photon inter...

Kim, Hyochul; Shen, Thomas C; Solomon, Glenn S; Waks, Edo; 10.1038/nphoton.2013.48

2013-01-01T23:59:59.000Z

354

UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence  

DOE Green Energy (OSTI)

UC Davis??s existing GATE centers have become the campus??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

Erickson, Paul

2012-05-31T23:59:59.000Z

355

Self?aligned high electron mobility transistor gate fabrication using focused ion beams  

Science Conference Proceedings (OSTI)

A new gate fabrication technique has been developed based on focused ion beam exposure and reactive ion etching of a polymethylmethacrylate (PMMA)/Ge/PMMA multilevel resist structure. The focused ion beam exposes the thin PMMA imaging layer that is transferred directly to the germanium layer using reactive ion etching (RIE). The underlying resist is etched first in oxygen at high pressure

G. M. Atkinson; R. L. Kubena; L. E. Larson; L. D. Nguyen; F. P. Stratton; L. M. Jelloian; M. V. Le; H. McNulty

1991-01-01T23:59:59.000Z

356

Useful-Skew Clock Routing with Gate Sizing for Low Power Design  

Science Conference Proceedings (OSTI)

This paper presents a new problem formulation and algorithm of clock routing combined with gate sizing for minimizing total logic and clock power. Instead of zero-skew or assuming a fixed skew bound, we seek to produce useful skews in clock routing. ...

Joe Gufeng Xi; Wayne Wei-Ming Dai

1997-07-01T23:59:59.000Z

357

Basic State Energy Budget Analysis for Phases 1, 2 and 3 of GATE  

Science Conference Proceedings (OSTI)

A diagnostic study of the budget of zonal and eddy components of available potential and kinetic energy is presented for the large-scale basic (time-averaged) state of the atmosphere for Phases 1, 2 and 3 of GATE. The Final Validated Data Set (...

Randy A. Peppler; Dayton G. Vincent

1983-02-01T23:59:59.000Z

358

A Diagnostic Study of the Diurnal Rainfall Variation in the GATE B-Scale Area  

Science Conference Proceedings (OSTI)

Heat and moisture budgets are used to compute net condensation rates in the GATE B-scale network for four hours of the day: 0000, 0600, 1200 and 1800 GMT. Budgets are presented for all phases combined, for selected periods of enhanced convection ...

Mark D. Albright; Donald R. Mock; Ernest E. Recker; Richard J. Reed

1981-07-01T23:59:59.000Z

359

The Surface Wave Environment In the GATE B/C ScalePhase III  

Science Conference Proceedings (OSTI)

The surface wave environment in the GATE B/C scale is described from wave measurements made from buoys and aircraft during Phase III (September 1974). Particular emphasis is given to the wave measurements made from the pitch-roll buoy deployed in ...

V. Cardone; H. Carlson; J. A. Ewing; K. Hasselmann; S. Lazanoff; W. McLeish; D. Ross

1981-09-01T23:59:59.000Z

360

US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing  

E-Print Network (OSTI)

- power in-vehicle energy storage for hybrid electric and fuel cell vehicles covering the fundamental into energy storage curriculum including vehicle topologies, advanced combustion, fuel cells, power from DOE. ME 597F HIL Advanced Vehicles (3) Contact: Joel R. Anstrom Director of Penn State GATE Center

Lee, Dongwon

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


361

A low-power, multichannel gated oscillator-based CDR for short-haul applications  

Science Conference Proceedings (OSTI)

A gated current-controlled oscillator (GCCO) based topology is used to implement a low-power multi-channel clock and data recovery (CDR) system in a 0.18um digital CMOS technology. A systematic approach is presented to design a reliable and low-power ...

Armin Tajalli; Paul Muller; Mojtaba Atarodi; Yusuf Leblebici

2005-08-01T23:59:59.000Z

362

Uniaxial Strain Effects on the Performance of a Ballistic Top Gate Graphene Nanoribbon on Insulator Transistor  

Science Conference Proceedings (OSTI)

The effects of uniaxial strain on the bandgap and performance of a top gate graphene nanoribbon (GNR) on insulator transistor are studied using pi-orbital basis 3-D ballistic quantum simulation. The bandgap variation with strain shows zigzag pattern ... Keywords: Graphene nanoribbon (GNR) on insulator transistor, nonequilibrium Green's function (NEGF) formalism, performance of GNR transistor, strain effects

K. Alam

2009-07-01T23:59:59.000Z

363

Novel universal threshold logic gate based on RTD and its application  

Science Conference Proceedings (OSTI)

Resonant tunneling diodes (RTDs) are receiving much attention because of their high-speed switching capability and functional versatility. Due to the negative differential resistance exhibited by RTDs, great functionality with a single gate can be achieved. ... Keywords: Monostable-bistable logic element (MOBILE), Resonant tunneling diode (RTD), Spectral technology, Threshold logic

Yi Wei; Jizhong Shen

2011-06-01T23:59:59.000Z

364

Effect of lateral strain on gate induced control of electrical conduction in single layer graphene device  

Science Conference Proceedings (OSTI)

We study numerically the effect of various types of in-plane strain on the electronic transport property in the single layer graphene connected to two metallic electrodes, with the special attention to the dependences on the gate voltage, channel length, ... Keywords: Electronic transport, Graphene, Strain

Satofumi Souma; Yusuke Ohmi; Matsuto Ogawa

2013-06-01T23:59:59.000Z

365

PGCapping: exploiting power gating for power capping and core lifetime balancing in CMPs  

Science Conference Proceedings (OSTI)

Optimizing the performance of a chip multiprocessor (CMP) within a power cap has recently received a lot of attention. However, most existing solutions rely solely on DVFS, which is anticipated to have only limited actuation ranges in the future. Power ... Keywords: chip multiprocessor, control theory, lifetime balancing, power capping, power control, power gating

Kai Ma; Xiaorui Wang

2012-09-01T23:59:59.000Z

366

Characterization of voltage-gated ionic currents in a peripheral sensory neuron in larval Drosophila  

E-Print Network (OSTI)

the normalized I-V relationship for INa in larval dbds (n = 8). These data show that in dbds, INa begins to activate at - 50 to -40 mV and reaches peak amplitude at -30 to -20 mV. Discussion In this study, we have presented measurements of volt- age-gated ionic...

Nair, Amit; Bate, Michael; Pulver, Stefan R

2010-06-02T23:59:59.000Z

367

Multifunctional Oxide Heterostructures  

Science Conference Proceedings (OSTI)

This book is devoted to the rapidly developing field of oxide thin-films and heterostructures. Oxide materials combined with atomic-scale precision in a heterostructure exhibit an abundance of macroscopic physical properties involving the strong coupling between the electronic, spin, and structural degrees of freedom, and the interplay between magnetism, ferroelectricity, and conductivity. Recent advances in thin-film deposition and characterization techniques made possible the experimental realization of such oxide heterostructures, promising novel functionalities and device concepts.

Tsymbal, E Y [University of Nebraska, Lincoln; Dagotto, Elbio R [ORNL; Eom, Professor Chang-Beom [University of Wisconsin, Madison; Ramesh, Ramamoorthy [University of California, Berkeley

2012-01-01T23:59:59.000Z

368

METAL OXIDE NANOPARTICLES  

SciTech Connect

This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

2007-10-01T23:59:59.000Z

369

Dosimetric effect of intrafraction tumor motion in phase gated lung stereotactic body radiotherapy  

Science Conference Proceedings (OSTI)

Purpose: A major concern for lung intensity modulated radiation therapy delivery is the deviation of actually delivered dose distribution from the planned one due to simultaneous movements of multileaf collimator (MLC) leaves and tumor. For gated lung stereotactic body radiotherapy treatment (SBRT), the situation becomes even more complicated because of SBRT's characteristics such as fewer fractions, smaller target volume, higher dose rate, and extended fractional treatment time. The purpose of this work is to investigate the dosimetric effect of intrafraction tumor motion during gated lung SBRT delivery by reconstructing the delivered dose distribution with real-time tumor motion considered. Methods: The tumor motion data were retrieved from six lung patients. Each of them received three fractions of stereotactic radiotherapy treatments with Cyberknife Synchrony (Accuray, Sunnyvale, CA). Phase gating through an external surrogate was simulated with a gating window of 5 mm. The resulting residual tumor motion curves during gating (beam-on) were retrieved. Planning target volume (PTV) was defined as physician-contoured clinical target volume (CTV) surrounded by an isotropic 5 mm margin. Each patient was prescribed with 60 Gy/3 fractions. The authors developed an algorithm to reconstruct the delivered dose with tumor motion. The DMLC segments, mainly leaf position and segment weighting factor, were recalculated according to the probability density function of tumor motion curve. The new DMLC sequence file was imported back to treatment planning system to reconstruct the dose distribution. Results: Half of the patients in the study group experienced PTV D95% deviation up to 26% for fractional dose and 14% for total dose. CTV mean dose dropped by 1% with tumor motion. Although CTV is almost covered by prescribed dose with 5 mm margin, qualitative comparison on the dose distributions reveals that CTV is on the verge of underdose. The discrepancy happens due to tumor excursion outside of the gating window, which, for our study group, is mainly caused by baseline shift, i.e., the change in general trend of the motion curve during extended period of treatment time. Conclusions: The dose deviation in PTV and CTV due to target motion is not always negligible in gated SBRT. Although CTVs are covered sufficiently with prescribed dose in most cases, some are on the verge of underdose due to large tumor excursion caused by factors such as baseline shift.

Zhao Bo; Yang Yong; Li Tianfang; Li Xiang; Heron, Dwight E.; Huq, M. Saiful [Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States) and Department of Radiation Oncology, UT Southwestern Medical Center, Dallas, Texas 75390 (United States); Department of Radiation Oncology, University of Pittsburgh Cancer Institute, Pittsburgh, Pennsylvania 15232 (United States)

2012-11-15T23:59:59.000Z

370

Defect Structure of Oxides  

Science Conference Proceedings (OSTI)

Table 1   Classification of electrical conductors: oxides, sulfides, and nitrides...2 O 4 , NiAl 2 O 4 , (Tl 2 O),

371

Oxidation of gallium arsenide  

DOE Patents (OSTI)

This invention relates to gallium arsenide semiconductors and, more particularly, to the oxidation of surface layers of gallium arsenide semiconductors for semiconductor device fabrication.

Hoffbauer, M.A.; Cross, J.B.

1991-11-16T23:59:59.000Z

372

Oxidation/Coatings  

Science Conference Proceedings (OSTI)

Oct 28, 2009 ... International Symposium on Ceramic Matrix Composites: Oxidation/ ... on combustor liners of a Solar Turbines' industrial gas turbine engine,...

373

A Modeling Study of Atmospheric Transport and Photochemistry in the Mixed Layer during Anticyclonic Episodes in Europe. Part II. Calculations of Photo-Oxidant Levels along Air Trajectories  

Science Conference Proceedings (OSTI)

A computer model for photochemical oxidant formation in the atmospheric boundary layer has been used to calculate trends in ozone formation in air masses traveling across Europe. Ozone calculations were made for some actual summertime ...

K. Selby

1987-10-01T23:59:59.000Z

374

Metal oxide porous ceramic membranes with small pore sizes  

DOE Patents (OSTI)

A method is disclosed for the production of metal oxide ceramic membranes of very small pore size. The process is particularly useful in the creation of titanium and other transition metal oxide membranes. The method utilizes a sol-gel process in which the rate of particle formation is controlled by substituting a relatively large alcohol in the metal alkoxide and by limiting the available water. Stable, transparent metal oxide ceramic membranes are created having a narrow distribution of pore size, with the pore diameter being manipulable in the range of 5 to 40 Angstroms.

Anderson, Marc A. (Madison, WI); Xu, Qunyin (Madison, WI)

1992-01-01T23:59:59.000Z

375

Metal oxide porous ceramic membranes with small pore sizes  

DOE Patents (OSTI)

A method is disclosed for the production of metal oxide ceramic membranes of very small pore size. The process is particularly useful in the creation of titanium and other transition metal oxide membranes. The method utilizes a sol-gel process in which the rate of particle formation is controlled by substituting a relatively large alcohol in the metal alkoxide and by limiting the available water. Stable, transparent metal oxide ceramic membranes are created having a narrow distribution of pore size, with the pore diameter being manipulable in the range of 5 to 40 Angstroms.

Anderson, Marc A. (Madison, WI); Xu, Qunyin (Madison, WI)

1991-01-01T23:59:59.000Z

376

Non-oxidative conversion of methane with continuous hydorgen removal  

SciTech Connect

The objective is to overcome the restrictions of non-oxidative methane pyrolysis and oxidative coupling of methane by transferring hydrogen across a selective inorganic membrane between methane and air streams, without simultaneous transport of hydrocarbon reactants or products. This will make the overall reaction system exothermic, remove the thermodynamic barrier to high conversion, and eliminate the formation of carbon oxides. Our approach is to couple C-H bond activation and hydrogen removal by passage of hydrogen atoms through a dense ceramic membrane. In our membrane reactor, catalytic methane pyrolysis produces C2+ hydrogen carbons and aromatics on the one side of the membrane and hydrogen is removed through an oxide film and combusted with air on the opposite side. This process leads to a net reaction with the stoichiometry and thermodynamic properties of oxidative coupling, but without contact between the carbon atoms and oxygen species.

Borry, R.W. III [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering; Iglesia, E. [California Univ., Berkeley, CA (United States). Lawrence Berkeley Lab.

1997-12-31T23:59:59.000Z

377

Primary Radiation Damage Formation  

SciTech Connect

The physical processes that give rise to changes in the microstructure, and the physical and mechanical properties of materials exposed to energetic particles are initiated by essentially elastic collisions between atoms in what has been called an atomic displacement cascade. The formation and evolution of this primary radiation damage mechanism are described to provide an overview of how stable defects are formed by displacement cascades, as well as the nature and morphology of the defects themselves. The impact of the primary variables cascade energy and irradiation temperature are discussed, along with a range of secondary factors that can influence damage formation.

Stoller, Roger E [ORNL

2012-01-01T23:59:59.000Z

378

Thermal oxidation of tungsten-based sputtered coatings  

SciTech Connect

The effect of the addition of nickel, titanium, and nitrogen on the air oxidation behavior of W-based sputtered coatings in the temperature range 600 to 800 C was studied. In some cases these additions significantly improved the oxidation resistance of the tungsten coatings. As reported for bulk tungsten, all the coatings studied were oxidized by layers following a parabolic law. Besides WO{sub 3} and WO{sub x} phases detected in all the oxidized coatings, TiO{sub 2} and NiWO{sub 4} were also detected for W-Ti and W-Ni films, respectively. WO{sub x} was present as an inner protective compact layer covered by the porous WO{sub 3} oxide. The best oxidation resistance was found for W-Ti and W-N-Ni coatings which also presented the highest activation energies (E{sub a} = 234 and 218 kJ/mol, respectively, as opposed to E{sub a} {approx} 188 kJ/mol for the other coatings). These lower oxidation weight gains were attributed to the greater difficulty of the inward diffusion of oxygen ions for W-Ti films, owing to the formation of fine particles of TiO{sub 2}, and the formation of the external, more protective layer of NiWO{sub 4} for W-N-Ni coatings.

Louro, C.; Cavaleiro, A. [Dept. de Engenharia Mecanica-Polo II, Coimbra (Portugal)

1997-01-01T23:59:59.000Z

379

Formaldehyde yields from methanol electrochemical oxidation on carbon-supported platinum catalysts  

Science Conference Proceedings (OSTI)

The formation of formaldehyde during methanol electrochemical oxidation on supported Pt and Pt-Ru catalysts was investigated. While on solid platinum electrodes, the formaldehyde yields from methanol oxidation are near 30% at low potentials; the yields fall below 2% for methanol electrochemical oxidation on carbon-supported catalysts in Nafion. The lower formaldehyde yields, which result from more complete methanol oxidation, are believed to arise from the ability of partial oxidation products to be transported to an array of active catalyst sites dispersed within the three-dimensional network of the Nafion film.

Childers, C.L.; Huang, H.; Korzeniewski, C. [Texas Tech Univ., Lubbock, TX (United States). Dept. of Chemistry and Biochemistry

1999-02-02T23:59:59.000Z

380

Use of oxides in thermochemical water-splitting cycles for solar heat sources. Copper oxides  

DOE Green Energy (OSTI)

Several oxides can be decomposed to oxygen and a lower oxide at temperatures that might be feasible with a solar heat source. Heat might be directly transmitted to the solid through an air window, rather than quartz, with release of oxygen to the atmosphere. The cycle utilizing CuO, I/sub 2/, and Mg (OH)/sub 2/ is similar to the previous Co/sub 3/O/sub 4/ - CoO cycle. We are concentrating on the reformation of CuO. At 448 K the rate is favorable; for example, the yield rises about linearly with time to 92% at 1.17 h and more slowly thereafter. The only difficulty is the formation of CuI as a metastable intermediate. The oxidation of CuI is thermodynamically very favorable, but its rate limits completion. Excess Mg(OH)/sub 2/ appears to increase the rate but not to the point where IO/sub 3//sup -/ oxidation of CuI competes with oxidation of Cu/sub 2/O. Nevertheless, the batch runs suggest that about 98% of the maximum possible MgI/sub 2/ could be formed. Cuprous iodide complexes formed in the concentrated MgI/sub 2/ may give the necessary improvement by providing a solution path for their oxidation by iodate. Work of others pertaining to the cycle is briefly discussed.

Jones, W.M.; Bowman, M.G.

1984-01-01T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


381

Stabilized chromium oxide film  

DOE Patents (OSTI)

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

1988-01-01T23:59:59.000Z

382

Stabilized chromium oxide film  

DOE Patents (OSTI)

Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

Nyaiesh, A.R.; Garwin, E.L.

1986-08-04T23:59:59.000Z

383

Interactions of Fe(II) with the iron oxidizing bacterium Rhodopseudomonas palustris TIE-1  

E-Print Network (OSTI)

Microbial anaerobic iron oxidation has long been of interest to biologists and geologists, both as a possible mechanism for the creation of banded iron formations before the rise of oxygen, and as a model system for organisms ...

Bird, Lina J. (Lina Joana)

2013-01-01T23:59:59.000Z

384

High fidelity gate operations within the coupled nuclear and electron spins of a nitrogen vacancy center in diamond  

E-Print Network (OSTI)

In this article we investigate the dynamics of a single negatively charged nitrogen-vacancy center (NV-) coupled to the spin of the nucleus of a 15-nitrogen atom and show that high fidelity gate operations are possible without the need for complicated composite pulse sequences. These operations include both the electron and nuclear spin rotations, as well as an entangling gate between them. These are experimentally realizable gates with current technology of sufficiently high fidelities that they can be used to build graph states for quantum information processing tasks.

Mark S. Everitt; Simon Devitt; W. J. Munro; Kae Nemoto

2013-09-12T23:59:59.000Z

385

Oxidative Degradation of Monoethanolamine  

NLE Websites -- All DOE Office Websites (Extended Search)

Oxidative Degradation of Monoethanolamine Oxidative Degradation of Monoethanolamine Susan Chi Gary T. Rochelle* (gtr@che.utexas.edu, 512-471-7230) The University of Texas at Austin Department of Chemical Engineering Austin, Texas 78712 Prepared for presentation at the First National Conference on Carbon Sequestration, Washington, DC, May 14-17, 2001 Abstract Oxidative degradation of monoethanolamine (MEA) was studied under typical absorber condition of 55°C. The rate of evolution of NH 3 , which was indicative of the overall rate of degradation, was measured continuously in a batch system sparged with air. Dissolved iron from 0.0001 mM to 1 mM yields oxidation rates from 0.37 to 2 mM/hr in MEA solutions loaded with 0.4 mole CO 2 / mole MEA. Ethylenediaminetetraacetic acid (EDTA) and N,N-bis(2- hydroxyethyl)glycine effectively decrease the rate of oxidation in the presence of iron by 40 to

386

Warm Water Mass Formation  

Science Conference Proceedings (OSTI)

Poleward heat transport by the own implies warm Water mass formation, i.e., the retention by the tropical and subtropical ocean of some of its net radiant heat gain. Under what condition net heat retention becomes comparable to latent heat ...

G. T. Csanady

1984-02-01T23:59:59.000Z

387

A Reactive Oxide Overlayer on Rh Nanoparticles during CO Oxidation and Its Size Dependence Studied by in Situ Ambient Pressure XPS  

DOE Green Energy (OSTI)

CO oxidation is one of the most studied heterogeneous reactions, being scientifically and industrially important, particularly for removal of CO from exhaust streams and preferential oxidation for hydrogen purification in fuel cell applications. The precious metals Ru, Rh, Pd, Pt, and Au are most commonly used for this reaction because of their high activity and stability. Despite the wealth of experimental and theoretical data, it remains unclear what is the active surface for CO oxidation under catalytic conditions for these metals. In this communication, we utilize in situ synchrotron ambient pressure X-ray photoelectron spectroscopy (APXPS) to monitor the oxidation state at the surface of Rh nanoparticles during CO oxidation and demonstrate that the active catalyst is a surface oxide, the formation of which is dependent on particle size. The amount of oxide formed and the reaction rate both increase with decreasing particle size.

Grass, Michael E.; Zhang, Yawen; Butcher, Derek R.; Park, Jeong Y.; Li, Yimin; Bluhm, Hendrik; Bratlie, Kaitlin M.; Zhang, Tianfu; Somorjai, Gabor A.

2008-09-15T23:59:59.000Z

388

MOLECULAR AND CELLULAR CONSEQUENCES OF DISEASE ASSOCIATED PROCESSING DEFECTS IN CONE PHOTORECEPTOR CYCLIC NUCLEOTIDE-GATED CHANNELS .  

E-Print Network (OSTI)

??Cyclic nucleotide-gated (CNG) channels are heterotetrameric (2A3:2B3) cation channels critical to the molecular cascade that couples light stimulus to membrane potential changes in photoreceptor cells. (more)

Duricka, Deborah Lynn

2011-01-01T23:59:59.000Z

389

An in depth examination of semi floating gate ultra low voltage flip-flops for high speed applications.  

E-Print Network (OSTI)

??In this thesis 4 different ultra low voltage (ULV) flip-flops are presented. Floating gates has been exploited to significantly increase the drain-source current. This technique (more)

Simenstad, Erik Jonathan

2013-01-01T23:59:59.000Z

390

ESS 2012 Peer Review - Notrees Wind Storage - Jeff Gates, Duke Energy  

Energy.gov (U.S. Department of Energy (DOE)) Indexed Site

Notrees Energy Storage Project Notrees Energy Storage Project Jeff Gates Duke Energy jeff.gates@duke-energy.com Project Objectives * Use energy storage to increase the value and practical application of wind generation * Integrate storage with intermittent renewable energy production * Improve use of power-producing assets by storing energy during non-peak generation periods * Demonstrate benefits of using fast response energy storage to provide ancillary services for grid management * Verify that energy storage solutions can operate within the ERCOT market protocols * Demonstrate ramp control and Energy Storage System * Technology: Advanced lead-acid battery * OEM Partner - Xtreme Power (XP) * 36 MW / 24 MWh output * Modules housed in ~ 6,000 sq. ft. building Project Activities to Date * Site construction began December

391

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots  

E-Print Network (OSTI)

Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates.

Nielsen, Erik; Muller, Richard P; Carroll, M S

2010-01-01T23:59:59.000Z

392

Implications of Simultaneous Requirements for Low Noise Exchange Gates in Double Quantum Dots  

E-Print Network (OSTI)

Achieving low-error, exchange-interaction operations in quantum dots for quantum computing imposes simultaneous requirements on the exchange energy's dependence on applied voltages. A double quantum dot (DQD) qubit, approximated with a quadratic potential, is solved using a full configuration interaction method. This method is more accurate than Heitler-London and Hund-Mulliken approaches and captures new and significant qualitative behavior. We show that multiple regimes can be found in which the exchange energy's dependence on the bias voltage between the dots is compatible with current quantum error correction codes and state-of-the-art electronics. Identifying such regimes may prove valuable for the construction and operation of quantum gates that are robust to charge fluctuations, particularly in the case of dynamically corrected gates.

Erik Nielsen; Ralph W. Young; Richard P. Muller; M. S. Carroll

2009-08-31T23:59:59.000Z

393

Practical fast gate rate InGaAs/InP single-photon avalanche photodiodes  

E-Print Network (OSTI)

We present a practical and easy-to-implement method for high-speed near infrared single-photon detection based on InGaAs/InP single-photon avalanche photodiodes (SPADs), combining aspects of both sine gating and self-differencing techniques. At a gating frequency of 921 MHz and temperature of -30 $^{\\circ}$C we achieve: a detection efficiency of 9.3 %, a dark count probability of 2.8$\\times10^{-6}$ ns$^{-1}$, while the afterpulse probability is 1.6$\\times10^{-4}$ ns$^{-1}$, with a 10 ns "count-off time" setting. In principle, the maximum count rate of the SPAD can approach 100 MHz, which can significantly improve the performance for diverse applications.

Jun Zhang; Rob Thew; Claudio Barreiro; Hugo Zbinden

2009-08-16T23:59:59.000Z

394

An entangling quantum-logic gate operated with an ultrabright single photon-source  

E-Print Network (OSTI)

We demonstrate unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 collected photons-per-pulse, the measured truth table has an overlap with the ideal case of 68.4%, increasing to 73.0% for a source brightness of 0.17 photons- per-pulse. The gate is entangling: at a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50%, and reaches 71.0% for a source brightness of 0.15.

O. Gazzano; M. P. Almeida; A. K. Nowak; S. L. Portalupi; A. Lematre; I. Sagnes; A. G. White.; P. Senellart

2013-03-01T23:59:59.000Z

395

Supercritical water oxidation of landfill leachate  

Science Conference Proceedings (OSTI)

Highlights: > Thermal analysis of NH{sub 3} in supercritical water oxidation reaction. > Research on the catalytic reaction of landfill leachate by using response surface method. > Kinetic research of supercritical water oxidation of NH{sub 3} with and without MnO{sub 2} catalyst. - Abstract: In this paper, ammonia as an important ingredient in landfill leachate was mainly studied. Based on Peng-Robinson formulations and Gibbs free energy minimization method, the estimation of equilibrium composition and thermodynamic analysis for supercritical water oxidation of ammonia (SCWO) was made. As equilibrium is reached, ammonia could be totally oxidized in SCW. N{sub 2} is the main product, and the formation of NO{sub 2} and NO could be neglected. The investigation on SCWO of landfill leachate was conducted in a batch reactor at temperature of 380-500 deg. C, reaction time of 50-300 s and pressure of 25 MPa. The effect of reaction parameters such as oxidant equivalent ratio, reaction time and temperature were investigated. The results showed that COD and NH{sub 3} conversion improved as temperature, reaction time and oxygen excess increased. Compared to organics, NH{sub 3} is a refractory compound in supercritical water. The conversion of COD and NH{sub 3} were higher in the presence of MnO{sub 2} than that without catalyst. The interaction between reaction temperature and time was analyzed by using response surface method (RSM) and the results showed that its influence on the NH{sub 3} conversion was relatively insignificant in the case without catalyst. A global power-law rate expression was regressed from experimental data to estimate the reaction rate of NH{sub 3}. The activation energy with and without catalyst for NH{sub 3} oxidation were 107.07 {+-} 8.57 kJ/mol and 83.22 {+-} 15.62 kJ/mol, respectively.

Wang Shuzhong, E-mail: s_z_wang@yahoo.cn [School of Energy and Power Engineering of Xi' an Jiao Tong University, Xi'an 710049 (China); Guo Yang [School of Energy and Power Engineering of Xi' an Jiao Tong University, Xi'an 710049 (China); Chen Chongming [Hebei Electric Power Research Institute, Shijizhuang, Hebei 050021 (China); Zhang Jie; Gong Yanmeng; Wang Yuzhen [School of Energy and Power Engineering of Xi' an Jiao Tong University, Xi'an 710049 (China)

2011-09-15T23:59:59.000Z

396

Formation flow channel blocking  

SciTech Connect

A method is claimed for selectively blocking high permeability flow channels in an underground hydrocarbon material bearing formation having flow channels of high permeability and having flow channels of lesser permeability. The method includes the following steps: introducing a blocking material fluid comprising a blocking material in a carrier into the flow channels through an injection well in communication with the formation; introducing a buffer fluid into the formation through the injection well for the buffer fluid to displace the blocking material fluid away from the injection well; allowing the blocking material to settle in the channels to resist displacement by fluid flowing through the channels; introducing a quantity of an activating fluid into the channels through the injection well at a sufficient rate for the activating fluid to displace the buffer fluid and finger into the high permeability channels to reach the blocking material in the high permeability channels without reaching the blocking material in the low permeability channels, the activating fluid being adapted to activate the blocking material which it reaches to cause blocking of the high permeability channels.

Kalina, A.I.

1982-11-30T23:59:59.000Z

397

Dry oxidation and fracture of LWR spent fuels  

SciTech Connect

This report evaluates the characteristics of oxidation and fracture of light-water reactor (LWR) spent fuel in dry air. It also discusses their effects on radionuclide releases in the anticipated high-level waste repository environment. A sphere model may describe diffusion-limited formation of lower oxides, such as U{sub 4}O{sub 9}, in the oxidation of the spent fuel (SF) matrix. Detrimental higher oxides, such as U{sub 3}O{sub 8}, may not form at temperatures below a threshold temperature. The nucleation process suggests that a threshold temperature exists. The calculated results regarding fracture properties of the SF matrix agree with experimental observations. Oxidation and fracture of Zircaloy may not be significant under anticipated conditions. Under saturated or unsaturated aqueous conditions, oxidation of the SF matrix is believed to increase the releases of Pu-(239+240), Am-(241+243), C-14, Tc-99, I-129, and Cs-135. Under dry conditions, I-129 releases are likely to be small, unlike C-14, in lower oxides; Cl-36, Tc-99, I-129, and Cs-135 may be released fast in higher oxides. 79 refs.

Ahn, T.M.

1996-11-01T23:59:59.000Z

398

Reduction of Oxidative Melt Loss of Aluminum and Its Alloys  

Science Conference Proceedings (OSTI)

This project led to an improved understanding of the mechanisms of dross formation. The microstructural evolution in industrial dross samples was determined. Results suggested that dross that forms in layers with structure and composition determined by the local magnesium concentration alone. This finding is supported by fundamental studies of molten metal surfaces. X-ray photoelectron spectroscopy data revealed that only magnesium segregates to the molten aluminum alloy surface and reacts to form a growing oxide layer. X-ray diffraction techniques that were using to investigate an oxidizing molten aluminum alloy surface confirmed for the first time that magnesium oxide is the initial crystalline phase that forms during metal oxidation. The analytical techniques developed in this project are now available to investigate other molten metal surfaces. Based on the improved understanding of dross initiation, formation and growth, technology was developed to minimize melt loss. The concept is based on covering the molten metal surface with a reusable physical barrier. Tests in a laboratory-scale reverberatory furnace confirmed the results of bench-scale tests. The main highlights of the work done include: A clear understanding of the kinetics of dross formation and the effect of different alloying elements on dross formation was obtained. It was determined that the dross evolves in similar ways regardless of the aluminum alloy being melted and the results showed that amorphous aluminum nitride forms first, followed by amorphous magnesium oxide and crystalline magnesium oxide in all alloys that contain magnesium. Evaluation of the molten aluminum alloy surface during melting and holding indicated that magnesium oxide is the first crystalline phase to form during oxidation of a clean aluminum alloy surface. Based on dross evaluation and melt tests it became clear that the major contributing factor to aluminum alloy dross was in the alloys with Mg content. Mg was identified as the primary factor that accelerates dross formation specifically in the transition from two phases to three phase growth. Limiting magnesium oxidation on the surface of molten aluminum therefore becomes the key to minimizing melt loss, and technology was developed to prevent magnesium oxidation on the aluminum surface. This resulted in a lot of the work being focused on the control of Mg oxidation. Two potential molten metal covering agents that could inhibit dross formation during melting and holding consisting of boric acid and boron nitride were identified. The latter was discounted by industry as it resulted in Boron pick up by the melt beyond that allowed by specifications during plant trials. The understanding of the kinetics of dross formation by the industry partners helped them understand how temperature, alloy chemistry and furnace atmosphere (burner controls--e.g. excess air) effected dross formation. This enables them to introduce in their plant process changes that reduced unnecessary holding at high temperatures, control burner configurations, reduce door openings to avoid ingress of air and optimize charge mixes to ensure rapid melting and avoid excess oxidation.

Dr. Subodh K. Das; Shridas Ningileri

2006-03-17T23:59:59.000Z

399

Support shape effect in metal oxide catalysis: ceria nanoshapes supported vanadia catalysts for oxidative dehydrogenation of iso-butane  

SciTech Connect

The activation energy of VOx/CeO2 catalysts in oxidative dehydrogenation of iso-butane was found dependent on the shape of ceria support: rods < octahedra, closely related to the surface oxygen vacancy formation energy and defects amount of the two ceria supports with different crystallographic surface planes.

Wu, Zili [ORNL; Schwartz, Viviane [ORNL; Li, Meijun [ORNL; Rondinone, Adam Justin [ORNL; Overbury, Steven {Steve} H [ORNL

2012-01-01T23:59:59.000Z

400

Analysis of Lipid Oxidation  

Science Conference Proceedings (OSTI)

Analysis of Lipid Oxidation is essential for further developments in analytical methodology and hyphenated techniques, with which more understanding of the reaction kinetics, mechanism, and implications will take place. ...

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
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they are not comprehensive nor are they the most current set.
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401

Oxidative Tritium Decontamination System  

DOE Patents (OSTI)

The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

2006-02-07T23:59:59.000Z

402

Cathodoluminescence of uranium oxides  

SciTech Connect

The cathodoluminescence of uranium oxide surfaces prepared in-situ from clean uranium exposed to dry oxygen was studied. The broad asymmetric peak observed at 470 nm is attributed to F-center excitation.

Winer, K.; Colmenares, C.; Wooten, F.

1984-08-09T23:59:59.000Z

403

Conservation-Law-Induced Quantum Limits for Physical Realizations of the Quantum NOT Gate  

E-Print Network (OSTI)

In recent investigations, it has been found that conservation laws generally lead to precision limits on quantum computing. Lower bounds of the error probability have been obtained for various logic operations from the commutation relation between the noise operator and the conserved quantity or from the recently developed universal uncertainty principle for the noise-disturbance trade-off in general measurements. However, the problem of obtaining the precision limit to realizing the quantum NOT gate has eluded a solution from these approaches. Here, we develop a new method for this problem based on analyzing the trace distance between the output state from the realization under consideration and the one from the ideal gate. Using the mathematical apparatus of orthogonal polynomials, we obtain a general lower bound on the error probability for the realization of the quantum NOT gate in terms of the number of qubits in the control system under the conservation of the total angular momentum of the computational qubit plus the the control system along the direction used to encode the computational basis. The lower bound turns out to be more stringent than one might expect from previous results. The new method is expected to lead to more accurate estimates for physical realizations of various types of quantum computations under conservation laws, and to contribute to related problems such as the accuracy of programmable quantum processors.

Tokishiro Karasawa; Masanao Ozawa

2007-05-14T23:59:59.000Z

404

Optimal control of quantum gates and suppression of decoherence in a system of interacting two-level particles  

E-Print Network (OSTI)

Methods of optimal control are applied to a model system of interacting two-level particles (e.g., spin-half atomic nuclei or electrons or two-level atoms) to produce high-fidelity quantum gates while simultaneously negating the detrimental effect of decoherence. One set of particles functions as the quantum information processor, whose evolution is controlled by a time-dependent external field. The other particles are not directly controlled and serve as an effective environment, coupling to which is the source of decoherence. The control objective is to generate target one- and two-qubit unitary gates in the presence of strong environmentally-induced decoherence and under physically motivated restrictions on the control field. The quantum-gate fidelity, expressed in terms of a novel state-independent distance measure, is maximized with respect to the control field using combined genetic and gradient algorithms. The resulting high-fidelity gates demonstrate the feasibility of precisely guiding the quantum evolution via optimal control, even when the system complexity is exacerbated by environmental coupling. It is found that the gate duration has an important effect on the control mechanism and resulting fidelity. An analysis of the sensitivity of the gate performance to random variations in the system parameters reveals a significant degree of robustness attained by the optimal control solutions.

Matthew Grace; Constantin Brif; Herschel Rabitz; Ian A. Walmsley; Robert L. Kosut; Daniel A. Lidar

2007-02-14T23:59:59.000Z

405

Coupling of oxidative dehydrogenation and aromatization reactions of butane  

Science Conference Proceedings (OSTI)

Coupling of oxidative dehydrogenation and aromatization of butane by using a dual function catalyst has led to a significant enhancement of the yields (from 25 to 40%) and selectivities to aromatics (from 39 to 64%). Butane is converted to aromatics by using either zinc-promoted [Ga]-ZSM-5 or zinc and gallium copromoted [Fe]-ZSM-5 zeolite as a catalyst. However, the formation of aromatics is severely limited by hydrocracking of butane to methane, ethane, and propane due to the hydrogen formed during aromatization reactions. On the other hand, the oxidative dehydrogenation of butane to butene over molybdate catalysts is found to be accompanied by a concurrent undesirable reaction, i.e., total oxidation. When two of these reactions (oxidative dehydrogenation and aromatization of butane) are coupled by using a dual function catalyst they have shown to complement each other. It is believed that the rate-limiting step for aromatization (butane to butene) is increased by adding an oxidative dehydrogenation catalyst (Ga-Zn-Mg-Mo-O). The formation of methane, ethane, and propane was suppressed due to the removal of hydrogen initially formed as water. Studies of ammonia TPD show that the acidities of [Fe]-ZSM-5 are greatly affected by the existence of metal oxides such as Ga[sub 2]O[sub 3], MgO, ZnO, and MoO[sub 3]. 40 refs., 9 figs., 1 tab.

Xu, Wen-Qing; Suib, S.L. (Univ. of Connecticut, Storrs, CT (United States))

1994-01-01T23:59:59.000Z

406

Controlled CO preferential oxidation  

DOE Patents (OSTI)

Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

Meltser, M.A.; Hoch, M.M.

1997-06-10T23:59:59.000Z

407

ADVANCED OXIDATION PROCESS  

DOE Green Energy (OSTI)

The removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from automotive fuels is an integral component in the development of cleaner burning and more efficient automobile engines. Oxidative desulfurization (ODS) wherein the dibenzothiophene derivative is converted to its corresponding sulfoxide and sulfone is an attractive approach to sulfur removal because the oxidized species are easily extracted or precipitated and filtered from the hydrocarbon phase. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) catalytically convert dibenzothiophene and its derivatives rapidly and effectively at moderate temperatures (50-60 C) and ambient pressure to the corresponding sulfoxides and sulfones. The oxidation process can be performed in both aqueous systems containing alcohols such as methanol, ethanol, or t-butanol, and in a two-phase hydrocarbon/aqueous system containing tert-butanol or acetonitrile. In the biphasic system, essentially complete conversion of the DBT to its oxidized products can be achieved using slightly longer reaction times than in homogeneous solution. Among the key features of the technology are the mild reaction conditions, the very high selectivity where no over oxidation of the sulfur compounds occurs, the near stoichiometric use of hydrogen peroxide, the apparent lack of degradation of sensitive fuel components, and the ease of separation of oxidized products.

Dr. Colin P. Horwitz; Dr. Terrence J. Collins

2003-11-04T23:59:59.000Z

408

Selective methane oxidation over promoted oxide catalysts. Quarterly report, March--May 1995  

DOE Green Energy (OSTI)

The objective of this research is the selective oxidative coupling of methane to C{sub 2}H{sub 4} hydrocarbons and oxygenates, in particular formaldehyde and methanol. Air, oxygen or carbon dioxide, rather than nitrous oxide will be utilized as the oxidizing gas at high gas hourly space velocity, but mild reaction conditions (500-700 {degrees}C, 1 atm total pressure). All the investigated processes are catalytic, aiming at minimizing gas phase reactions that are difficult to control. The research is divided into the following three tasks: (1) maximizing selective methane oxidation to C{sub 2}H{sub 4} products over promoted Sr/La{sub 2}O{sub 3}; (2) selective methane oxidation to oxygenates; and (3) catalyst characterization and optimization. Task 1 dealt with the preparation, testing, and optimization of acidic promoted lanthana-based catalysts for the synthesis of C{sub 2}H{sub 4} hydrocarbons and is essentially completed. Task 2 aims at the formation and optimization of promoted catalysts for the synthesis of oxygenates, in particular formaldehyde and methanol. Task 3 involves characterization of the most promising catalysts so that optimization can be achieved under Task 2. Accomplishments for this period are presented.

Klier, K.; Herman, R.G.; Wang, Chaun-Bao; Shi, Chunlei; Sun, Qun

1995-08-01T23:59:59.000Z

409

Respiration Induced Heart Motion and Indications of Gated Delivery for Left-Sided Breast Irradiation  

SciTech Connect

Purpose: To investigate respiration-induced heart motion for left-sided breast irradiation using a four-dimensional computed tomography (4DCT) technique and to determine novel indications to assess heart motion and identify breast patients who may benefit from a gated treatment. Methods and Materials: Images of 4DCT acquired during free breathing for 20 left-sided breast cancer patients, who underwent whole breast irradiation with or without regional nodal irradiation, were analyzed retrospectively. Dose distributions were reconstructed in the phases of 0%, 20%, and 50%. The intrafractional heart displacement was measured in three selected transverse CT slices using D{sub LAD} (the distance from left ascending aorta to a fixed line [connecting middle point of sternum and the body] drawn on each slice) and maximum heart depth (MHD, the distance of the forefront of the heart to the line). Linear regression analysis was used to correlate these indices with mean heart dose and heart dose volume at different breathing phases. Results: Respiration-induced heart displacement resulted in observable variations in dose delivered to the heart. During a normal free-breathing cycle, heart-induced motion D{sub LAD} and MHD changed up to 9 and 11 mm respectively, resulting in up to 38% and 39% increases of mean doses and V{sub 25.2} for the heart. MHD and D{sub LAD} were positively correlated with mean heart dose and heart dose volume. Respiratory-adapted gated treatment may better spare heart and ipsilateral-lung compared with the conventional non-gated plan in a subset of patients with large D{sub LAD} or MHD variations. Conclusion: Proposed indices offer novel assessment of heart displacement based on 4DCT images. MHD and D{sub LAD} can be used independently or jointly as selection criteria for respiratory gating procedure before treatment planning. Patients with great intrafractional MHD variations or tumor(s) close to the diaphragm may particularly benefit from the gated treatment.

Qi, X. Sharon, E-mail: xiangrong.qi@ucdenver.edu [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Hu, Angela [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Wang Kai [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States); Newman, Francis [Department of Radiation Oncology, University of Colorado Denver, Aurora, CO (United States); Crosby, Marcus; Hu Bin; White, Julia; Li, X. Allen [Department of Radiation Oncology, Medical College of Wisconsin, Milwaukee, WI (United States)

2012-04-01T23:59:59.000Z

410

Hypervelocity impact jet formation  

SciTech Connect

The hypervelocity impact of a particle on a surface generates a jet of shocked material which is thrown from the impact site. A simple analytic model has been developed to obtain expressions for the evolution of this jet of ejecta. The analysis is based on applying the conservation equations of mass and momentum to the problem of a normal impact of a sphere against a semi-infinite flat target. Expressions are developed for the evolution of the jet velocity, jet release point and the locus of points which describe the ejecta envelope. These analytical ejecta profiles are compared with high speed photographs of impact jet formation. 6 refs., 7 figs.

Ang, J.A.

1991-01-01T23:59:59.000Z

411

Formation of Carbon Dwarfs  

E-Print Network (OSTI)

We consider the formation of dwarf carbon stars via accretion from a carbon AGB companion in light of the new 107 object sample of Downes et al. (2004). This sample is now large enough to allow good mass determination via comparison of a composite spectrum to theoretical atmospheric models. Carbon dwarfs of spectral type M are indeed main sequence M dwarfs with enhanced metallicity and carbon abundance. We also calculate the predicted abundance of both M and of F/G carbon dwarfs, and show that the latter should be falsifiable in the near future.

Charles L. Steinhardt; Dimitar D. Sasselov

2005-02-08T23:59:59.000Z

412

Fusion Techniques for the Oxidation of Refractory Actinide Oxides  

Science Conference Proceedings (OSTI)

Small-scale experiments were performed to demonstrate the feasibility of fusing refractory actinide oxides with a series of materials commonly used to decompose minerals, glasses, and other refractories as a pretreatment to dissolution and subsequent recovery operations. In these experiments, 1-2 g of plutonium or neptunium oxide (PuO2 or NpO2) were calcined at 900 degrees Celsius, mixed and heated with the fusing reagent(s), and dissolved. For refractory PuO2, the most effective material tested was a lithium carbonate (Li2CO3)/sodium tetraborate (Na2B4O7) mixture which aided in the recovery of 90 percent of the plutonium. The fused product was identified as a lithium plutonate (Li3PuO4) by x-ray diffraction. The use of a Li2CO3/Na2B4O7 mixture to solubilize high-fired NpO2 was not as effective as demonstrated for refractory PuO2. In a small-scale experiment, 25 percent of the NpO2 was oxidized to a neptunium (VI) species that dissolved in nitric acid. The remaining neptunium was then easily recovered from the residue by fusing with sodium peroxide (Na2O2). Approximately 70 percent of the neptunium dissolved in water to yield a basic solution of neptunium (VII). The remainder was recovered as a neptunium (VI) solution by dissolving the residue in 8M nitric acid. In subsequent experiments with Na2O2, the ratio of neptunium (VII) to (VI) was shown to be a function of the fusion temperature, with higher temperatures (greater than approximately 400 degrees C) favoring the formation of neptunium (VII). The fusion of an actual plutonium-containing residue with Na2O2 and subsequent dissolution was performed to demonstrate the feasibility of a pretreatment process on a larger scale. Sodium peroxide was chosen due to the potential of achieving higher actinide recoveries from refractory materials. In this experiment, nominally 10 g of a graphite-containing residue generated during plutonium casting operations was initially calcined to remove the graphite. Removal of combustible material prior to a large-scale fusion with Na2O2 is needed due to the large amount of heat liberated during oxidation. Two successive fusions using the residue from the calcination and the residue generated from the initial dissolution allowed recovery of 98 percent of the plutonium. The fusion of the residue following the first dissolution was performed at a higher temperature (600 degrees Celsius versus 450 degrees Celsius during the first fusion). The ability to recover most of the remaining plutonium from the residue suggest the oxidation efficiency of the Na2O2 fusion improves with higher temperatures similar to results observed with NpO2 fusion.

Rudisill, T.S.

1999-04-15T23:59:59.000Z

413

Indium oxide 'rods in dots' nanostructures  

SciTech Connect

The authors have demonstrated a special indium oxide (In{sub 2}O{sub 3}) 'rods in dots' nanostructure with high nanorod sheet density of over 10{sup 12} cm{sup -2}. The approach has been realized through depositing controllable individual In{sub 2}O{sub 3} nanorods in both number and shape within a single porous alumina membrane (PAM) nanochannel under radio frequency magnetron sputtering. The authors further discussed in detail effects of the PAM configurations (pore diameter and thickness) and sputtering conditions (substrate temperature and argon pressure) on the formation of the In{sub 2}O{sub 3} nanostructure.

Ding, G. Q.; Shen, W. Z.; Zheng, M. J.; Zhou, Z. B. [Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030 (China)

2006-08-07T23:59:59.000Z

414

Metal oxide membranes for gas separation  

DOE Patents (OSTI)

A method for formation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation. 4 figs.

Anderson, M.A.; Webster, E.T.; Xu, Q.

1994-08-30T23:59:59.000Z

415

Self-formation in Microelectronics  

Science Conference Proceedings (OSTI)

The external formation of integrated circuits based on lithographic processes is not the only possible method for manufacturing electron devices, either integrated circuits or photovoltaic cells. Planar technology, based on external formation, requires ... Keywords: Artificial Systems, Development, Microelectronics, Reproduction, Self-Formation

Stepas Januonis

2000-06-01T23:59:59.000Z

416

Optimal reorganization of agent formations  

Science Conference Proceedings (OSTI)

In this article we address the problem of determining how a structured formation of autonomous undistinguishable agents can be reorganized into another, eventually non-rigid, formation based on changes in the environment, perhaps unforeseeable. The methodology ... Keywords: combinatorial optimization, dynamic programming, formation reorganization

Dalila B. M. M. Fontes; Fernando A. C. C. Fontes

2008-09-01T23:59:59.000Z

417

Further evaluation of a nitric oxide model  

SciTech Connect

Further verification of a predictive model for nitric oxide formation during turbulent combustion of coal containing fuels has been conducted. Computations for pulverized coal combustion in CO/sub 2/-O/sub 2/ mixtures of various percents have been completed. The predictions NO concentrations compare favorably with experimental measurements. Simulations were also completed for entrained-flow gasification in a laboratory-scale combustor. Again, reasonable agreement is demonstrated by comparing laboratory NO maps to predicted NO concentrations. The effects of pressure on NO concentrations were reliably predicted. Calculations were also completed for air-staged combustion in a one-dimensional, laboratory-scale reactor. In general, the trend of decreasing primary zone stoichiometric ratio and variation in staging air location were correctly predicted. The simplified global mechanism expressions of the NO model appear to sufficiently account for the formation and competing destruction of NO in both fuel-lean and fuel-rich environments for different reactor systems and conditions.

Boardman, R.D.; Smoot, L.D.

1987-01-01T23:59:59.000Z

418

Improved Off-State Stress Critical Voltage on AlGaN/GaN High Electron Mobility Transistors Utilizing Pt/Ti/Au Based Gate Metallization  

Science Conference Proceedings (OSTI)

The critical voltage for degradation of AlGaN/GaN high electron mobility transistors (HEMTs) employed with the Pt/Ti/Au gate metallization instead of the commonly used Ni/Au was significantly increased during the off-state stress. The typical critical voltage for HEMTs with Ni/Au gate metallization was around -60V. By sharp contrast, no critical voltage was observed for the HEMTs with Pt/Ti/Au gate metallization, even up to -100V, which was the instrumental limitation in this experiment. Both Schottky forward and reverse gate characteristics of the Ni/Au degraded once the gate voltage passed the critical voltage of around -60V. There was no degradation exhibited for the HEMTs with Pt-gated HEMTs.

Lo, C. F. [University of Florida; Liu, L. [University of Florida, Gainesville; Kang, Tsung Sheng [University of Florida, Gainesville; Davies, Ryan [University of Florida; Gila, Brent P. [University of Florida, Gainesville; Pearton, S. J. [University of Florida; Kravchenko, Ivan I [ORNL; Laboutin, O. [Kopin Corporation, Taunton, MA; Cao, Yu [Kopin Corporation, Taunton, MA; Johnson, Wayne J. [Kopin Corporation, Taunton, MA; Ren, F. [University of Florida

2011-01-01T23:59:59.000Z

419

Recovery and regeneration of spent MHD seed material by the formate process  

SciTech Connect

The specification discloses a spent seed recovery and regeneration process for an MHM power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to supress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate.

Sheth, Atul C. (Tullahoma, TN); Holt, Jeffrey K. (Manchester, TN); Rasnake, Darryll G. (Manchester, TN); Solomon, Robert L. (Seattle, WA); Wilson, Gregory L. (Redmond, WA); Herrigel, Howard R. (Seattle, WA)

1991-01-01T23:59:59.000Z

420

Recovery and regeneration of spent MHD seed material by the formate process  

DOE Patents (OSTI)

The specification discloses a spent seed recovery and regeneration process for an MHD power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to suppress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate. 5 figures.

Sheth, A.C.; Holt, J.K.; Rasnake, D.G.; Solomon, R.L.; Wilson, G.L.; Herrigel, H.R.

1991-10-15T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


421

Patient radiation dose in prospectively gated axial CT coronary angiography and retrospectively gated helical technique with a 320-detector row CT scanner  

Science Conference Proceedings (OSTI)

Purpose: The aim of this study was to evaluate radiation dose to patients undergoing computed tomography coronary angiography (CTCA) for prospectively gated axial (PGA) technique and retrospectively gated helical (RGH) technique. Methods: Radiation doses were measured for a 320-detector row CT scanner (Toshiba Aquilion ONE) using small sized silicon-photodiode dosimeters, which were implanted at various tissue and organ positions within an anthropomorphic phantom for a standard Japanese adult male. Output signals from photodiode dosimeters were read out on a personal computer, from which organ and effective doses were computed according to guidelines published in the International Commission on Radiological Protection Publication 103. Results: Organs that received high doses were breast, followed by lung, esophagus, and liver. Breast doses obtained with PGA technique and a phase window width of 16% at a simulated heart rate of 60 beats per minute were 13 mGy compared to 53 mGy with RGH technique using electrocardiographically dependent dose modulation at the same phase window width as that in PGA technique. Effective doses obtained in this case were 4.7 and 20 mSv for the PGA and RGH techniques, respectively. Conversion factors of dose length product to the effective dose in PGA and RGH were 0.022 and 0.025 mSv mGy{sup -1} cm{sup -1} with a scan length of 140 mm. Conclusions: CTCA performed with PGA technique provided a substantial effective dose reduction, i.e., 70%-76%, compared to RGH technique using the dose modulation at the same phase windows as those in PGA technique. Though radiation doses in CTCA with RGH technique were the same level as, or some higher than, those in conventional coronary angiography (CCA), the use of PGA technique reduced organ and effective doses to levels less than CCA except for breast dose.

Seguchi, Shigenobu; Aoyama, Takahiko; Koyama, Shuji; Fujii, Keisuke; Yamauchi-Kawaura, Chiyo [Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan) and Department of Medical Technology, Nagoya Daini Red Cross Hospital, Myouken-chou, Showa-ku, Nagoya 466-8650 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan); Section of Radiological Protection, National Institute of Radiological Sciences, Anagawa, Inage-ku, Chiba 263-8555 (Japan); Graduate School of Medicine, Nagoya University, Daikominami, Higashi-ku, Nagoya 461-8673 (Japan)

2010-11-15T23:59:59.000Z

422

NIST{endash}JANAF Thermochemical Tables for the Iodine Oxides  

Science Conference Proceedings (OSTI)

The thermodynamic and spectroscopic properties of the iodine oxide species have been reviewed. Recommended NIST{endash}JANAF Thermochemical Tables are given for six gaseous iodine oxides: IO, OIO, IOO, IOI, IIO, and IO{sub 3}. Sufficient information is not available to generate thermochemical tables for any condensed phase species. Annotated bibliographies (over 400 references) are provided for all neutral iodine oxides which have been reported in the literature. There is a lack of experimental thermodynamic and spectroscopic information for all iodine oxide species, except IO(g) and OIO(g). The recommended thermochemical tables are based on estimates for the structure, vibrational frequencies, and enthalpy of formation based in part on the spectroscopic and thermodynamic data for the other halogen oxides [J. Phys. Chem. Ref. Data {bold 25}, 551 (1996); {bold 25}, 1061 (1996)]. Although there is a definite lack of information in comparison with the other halides, this information is provided for the iodine oxides for the following reasons: (1) to complete the study of the halogen oxide family and (2) to stress the need for additional experimental measurements. Of all the species mentioned in the literature, many have not been isolated or characterized. In fact, some do not exist. Throughout this paper, uncertainties attached to recommended values correspond to the uncertainty interval, equal to twice the standard deviation of the mean. {copyright} {ital 1996 American Institute of Physics and American Chemical Society.}

Chase, M.W. [Standard Reference Data Program, National Institute of Standards and Technology, Gaithersburg, Maryland 20879 (United States)

1996-09-01T23:59:59.000Z

423

Thermally Oxidized Silicon  

NLE Websites -- All DOE Office Websites (Extended Search)

Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Anneli Munkholm (Lumileds Lighting) and Sean Brennan (SSRL) Illustration of the silicon positions near the Si-SiO2 interface for a 4° miscut projected onto the ( ) plane. The silicon atoms in the substrate are blue and those in the oxide are red. The small black spots represent the translated silicon positions in the absence of static disorder. The silicon atoms in the oxide have been randomly assigned a magnitude and direction based on the static disorder value at that position in the lattice. The outline of four silicon unit cells is shown in black, whereas the outline of four expanded lattice cells in the oxide is shown in blue One of the most studied devices of modern technology is the field-effect transistor, which is the basis for most integrated circuits. At its heart

424

Methanol partial oxidation reformer  

DOE Patents (OSTI)

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-24T23:59:59.000Z

425

Methanol partial oxidation reformer  

DOE Patents (OSTI)

A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

Ahmed, S.; Kumar, R.; Krumpelt, M.

1999-08-17T23:59:59.000Z

426

High-resolution core-level photoemission study of CF{sub 4}-treated Gd{sub 2}O{sub 3}(Ga{sub 2}O{sub 3}) gate dielectric on Ge probed by synchrotron radiation  

SciTech Connect

High-resolution core-level photoemission analysis using synchrotron radiation was used to investigate the superior electrical performance of aGa{sub 2}O{sub 3}(Gd{sub 2}O{sub 3}) gate dielectric on Ge(001) after CF{sub 4} treatment. Prior to the treatment, a thin germanate-like oxide layer that formed at the interface prevented Ge from diffusing to the surface. The Ge surface retained a small amount of buckled dimers from the as-grown sample. The buckled dimers were quickly removed by CF{sub 4} plasma treatment followed by an annealing process, resulting in a more uniform interface than that of the as-grown sample. The detailed interfacial electronic structure for the untreated and treated samples are presented.

Pi, T.-W. [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Huang, M. L.; Kwo, J. [Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan (China); Department of Physics, National TsingHua University, Hsinchu 30013, Taiwan (China); Lee, W. C.; Chu, L. K.; Lin, T. D.; Chiang, T. H.; Wang, Y. C.; Wu, Y. D.; Hong, M. [Department of Materials Science and Engineering, National TsingHua University, Hsinchu 30013, Taiwan (China)

2011-02-07T23:59:59.000Z

427

Molecular water oxidation catalyst  

DOE Patents (OSTI)

A dimeric composition of the formula: ##STR1## wherein L', L", L'", and L"" are each a bidentate ligand having at least one functional substituent, the ligand selected from bipyridine, phenanthroline, 2-phenylpyridine, bipyrimidine, and bipyrazyl and the functional substituent selected from carboxylic acid, ester, amide, halogenide, anhydride, acyl ketone, alkyl ketone, acid chloride, sulfonic acid, phosphonic acid, and nitro and nitroso groups. An electrochemical oxidation process for the production of the above functionally substituted bidentate ligand diaqua oxo-bridged ruthenium dimers and their use as water oxidation catalysts is described.

Gratzel, Michael (St. Sulpice, CH); Munavalli, Shekhar (Bel Air, MD); Pern, Fu-Jann (Lakewood, CO); Frank, Arthur J. (Lakewood, CO)

1993-01-01T23:59:59.000Z

428

Tetraalykylammonium polyoxoanionic oxidation catalysts  

DOE Patents (OSTI)

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z (n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

1998-01-01T23:59:59.000Z

429

Tetraalklylammonium polyoxoanionic oxidation catalysts  

DOE Patents (OSTI)

Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

1998-10-06T23:59:59.000Z

430

The effective Hamiltonian of the Pound-Overhauser controlled-NOT gate, submitted for publication  

E-Print Network (OSTI)

Abstract. In NMR-based quantum computing, it is known that the controlled-NOT gate can be implemented by applying a low-power, monochromatic radiofrequency field to one peak of a doublet in a weakly-coupled two-spin system. This is known in NMR spectroscopy as Pound-Overhauser double resonance. The transition Hamiltonian that has been associated with this procedure is however only an approximation, which ignores off-resonance effects and does not correctly predict the associated phase factors. In this paper, the exact effective Hamiltonian for evolution of the spins state in a rotating frame is derived, both under irradiation of a single peak (on-transition) as well as between the peaks of the doublet (onresonance). The accuracy of these effective Hamiltonians is validated by comparing the observable product operator components of the density matrix obtained by simulation to those obtained by fitting the corresponding experiments. It is further shown that an on-resonance field yields a new implementation of the controlled-NOT gate up to phase factors, wherein the field converts the I A z state into the antiphase state 2IAx IBz, which is then converted into the desired two-spin order 2I A z IBz by a broadband ?/2 pulse selective for the A spin. In the on-transition case, it is explained that while a controlled-NOT gate is approximately obtained whenever the radio-frequency field power is low compared to the spin-spin coupling, at certain specific power levels an exact implementation is obtained up to phase factors. For both these implementations, the phase factors are derived exactly, enabling them to be corrected. In Appendices, the on-resonance Hamiltonian is analytically diagonalized, and proofs are given that, in the weak-coupling approximation, off-resonance effects can be neglected whenever the radio-frequency field power is small compared to the difference in resonance frequencies of the two spins.

David G Cory; Amy E Dunlop; Timothy F Havel; S Somaroo; Wurong Zhang

1999-01-01T23:59:59.000Z

431

Gain-offunction mutations reveal expanded intermediate states and a sequential action of two gates in  

E-Print Network (OSTI)

abstract The tension-driven gating transition in the large mechanosensitive channel MscL proceeds through detectable states of intermediate conductance. Gain-of-function (GOF) mutants with polar or charged substitutions in the main hydrophobic gate display altered patterns of subconducting states, providing valuable information about gating intermediates. Here we present thermodynamic analysis of several GOF mutants to clarify the nature and position of low-conducting conformations in the transition pathway. Unlike wild-type (WT) MscL, which predominantly occupies the closed and fully open states with very brief substates, the mild V23T GOF mutant frequently visits a multitude of short-lived subconducting states. Severe mutants V23D and G22N open in sequence: closed (C) ? low-conducting substate (S) ? open (O), with the first subtransition occurring at lower tensions. Analyses of equilibrium state occupancies as functions of membrane tension show that the C?S subtransition in WT MscL is associated with only a minor conductance increment, but the largest in-plane expansion and free energy change. The GOF substitutions strongly affect the first subtransition by reducing area (?A) and energy (?E) changes between C and S states commensurably with the severity of mutation. GOF mutants also exhibited a considerably larger ?E associated with the second (S?O) subtransition, but a ?A similar to WT. The area changes indicate that closed conformations of GOF mutants are physically preexpanded. The tension dependencies of rate constants for channel closure (k off) predict different positions of rate-limiting barriers on the energy-area profiles

Andriy Anishkin; Chien-sung Chiang; Sergei Sukharev

2005-01-01T23:59:59.000Z

432

Cloning and first functional characterization of a plant cyclic nucleotide-gated cation channel  

Science Conference Proceedings (OSTI)

Cyclic nucleotide-gated (cng) non-selective cation channels have been cloned from a number of animal systems. These channels are characterized by direct gating upon cAMO or cGMO binding to the intracellular portion of the channel protein, which leads to an increase in channel conductance. Animal cng channels are involved in signal transduction systems; they translate stimulus-induced changes in cytosolic cyclic nucleotide into altered cell membrane potential and/or cation flux as part of a signal cascade pathway. Putative plant homologs of animal cng channels have been identified. However, functional characterization (i.e., demonstration of cyclic-nucleotide-dependent ion currents) of a plant cng channel has not yet been accomplished. The authors report the cloning and first functional characterization of a plant member of this family of ion channels. The Arabidopsis cDNA AtCNGC2 encodes a polypeptide with deduced homology to the {alpha}-subunit of animal channels, and facilitates cyclic nucleotide-dependent cation currents upon expression in a number of heterologous systems. AtCNGC2 expression in a yeast mutant lacking a low-affinity K{sup +} uptake system complements growth inhibition only when lipophilic nucleotides are present in the culture medium. Voltage clamp analysis indicates that Xenopus lawvis oocytes injected with AtCNGC2 cRNA demonstrate cyclic-nucleotide-dependent, inward-rectifying K{sup +} currents. Human embryonic kidney cells (HEK293) transfected with AtCNGC2 cDNA demonstrate increased permeability to Ca{sup 2+} only in the presence of lipophilic cyclic nucleotides. The evidence presented here supports the functional classification of AtCNGC2 as a cyclic-nucleotide-gated cation channel, and presents the first direct evidence identifying a plant member of this ion channel family.

Leng, Q.; Mercier, R.W.; Yao, W.; Berkowitz, G.A.

1999-11-01T23:59:59.000Z

433

Observations on the oxidation of Mn-modified Ni-base Haynes 230 alloy under SOFC exposure conditions  

Science Conference Proceedings (OSTI)

The commercial Ni-base Haynes 230 alloy (Ni-Cr-Mo-W-Mn) was modified with two increased levels of Mn (1 and 2 wt per cent) and evaluated for its oxidation resistance under simulated SOFC interconnect exposure conditions. Oxidation rate, oxide morphology, oxide conductivity and thermal expansion were measured and compared with commercial Haynes 230. It was observed that additions of higher levels of Mn to the bulk alloy facilitated the formation of a bi-layered oxide scale that was comprised of an outer M3O4 (M=Mn, Cr, Ni) spinel-rich layer at the oxide gas interface over a Cr2O3-rich sub-layer at the metal oxide interface. The modified alloys showed higher oxidation rates and the formation of thicker oxide scales compared to the base alloy. The formation of a spinel-rich top layer improved the scale conductivity, especially during the early stages of the oxidation, but the higher scale growth rate resulted in an increase in the area-specific electrical resistance over time. Due to their face-centered cubic crystal structure, both commercial and modified alloys demonstrated a coefficient of thermal expansion that was higher than that of typical anode-supported and electrolyte-supported SOFCs.

Yang, Z Gary; Xia, Gordon; Stevenson, Jeffry W.; Singh, Prabhakar

2005-07-01T23:59:59.000Z

434

Biological Properties of Zinc Oxide-Coated Anodized Aluminum Oxide  

Science Conference Proceedings (OSTI)

We used agar diffusion assays to evaluate the activity of zinc oxide-coated ... Zirconia Stabilisation Nano-Confined by Using Electroless Nickel Cladding .... Metal Oxide Nanofibers Produced by a ForceSpinning Method for Battery Electrodes.

435

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals  

SciTech Connect

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01T23:59:59.000Z

436

Demonstration of an optical quantum controlled-NOT gate without path interference  

E-Print Network (OSTI)

We report the first experimental demonstration of an optical quantum controlled-NOT gate without any path interference, where the two interacting path interferometers of the original proposals (Phys. Rev. A {\\bf 66}, 024308 (2001), Phys. Rev. A {\\bf 65}, 012314 (2002)) have been replaced by three partially polarizing beam splitters with suitable polarization dependent transmittances and reflectances. The performance of the device is evaluated using a recently proposed method (Phys. Rev. Lett. {\\bf 94}, 160504 (2005)), by which the quantum process fidelity and the entanglement capability can be estimated from the 32 measurement results of two classical truth tables, significantly less than the 256 measurement results required for full quantum tomography.

Okamoto, R; Takeuchi, S; Sasaki, K; Okamoto, Ryo; Hofmann, Holger F.; Takeuchi, Shigeki; Sasaki, Keiji

2005-01-01T23:59:59.000Z

437

Demonstration of an optical quantum controlled-NOT gate without path interference  

E-Print Network (OSTI)

We report the first experimental demonstration of an optical quantum controlled-NOT gate without any path interference, where the two interacting path interferometers of the original proposals (Phys. Rev. A {\\bf 66}, 024308 (2001), Phys. Rev. A {\\bf 65}, 012314 (2002)) have been replaced by three partially polarizing beam splitters with suitable polarization dependent transmittances and reflectances. The performance of the device is evaluated using a recently proposed method (Phys. Rev. Lett. {\\bf 94}, 160504 (2005)), by which the quantum process fidelity and the entanglement capability can be estimated from the 32 measurement results of two classical truth tables, significantly less than the 256 measurement results required for full quantum tomography.

Ryo Okamoto; Holger F. Hofmann; Shigeki Takeuchi; Keiji Sasaki

2005-06-30T23:59:59.000Z

438

Design of a scanning gate microscope in a cryogen-free dilution refrigerator  

E-Print Network (OSTI)

We report on our design of a scanning gate microscope housed in a cryogen-free dilution refrigerator with a base temperature of 15 mK. The recent increase in efficiency of pulse tube cryocoolers has made cryogen-free systems popular in recent years. However, this new style of cryostat presents challenges for performing scanning probe measurements, mainly as a result of the vibrations introduced by the cryocooler. We demonstrate scanning with root-mean-square vibrations of 0.8 nm at 3 K and 2.1 nm at 15 mK in a 1 kHz bandwidth with our design.

Pelliccione, Matthew; Bartel, John; Keller, Andrew; Goldhaber-Gordon, David

2012-01-01T23:59:59.000Z

439

Hydrous oxide activated charcoal  

SciTech Connect

This patent describes a process for preparing of an ion exchanger, comprising: treating an ionically inert activated charcoal porous support with an aqueous solution of metal oxychloride selected from the group consisting of zirconium and titanium oxychlorides so as to impregnate the pores of the support with the solution; separating the treated support from excess metal oxychloride solution; converting the metal oxychloride to a hydrous metal oxide precipitate in the pores of the support at a pH above 8 and above the pH whereat the hydrous metal oxide and activated charcoal support have opposite zeta potentials and sufficient to hydrolyze the metal oxychloride. It also describes a process for preparing an ion exchanger comprising: treating granulated activated charcoal with a concentrated solution of a metal oxychloride from the group consisting of zirconium and titanium oxychlorides, degassing the mixture; and treating the resultant mixture with a base selected from the group consisting of ammonium hydroxide and alkali metal hydroxides so as to precipitate the oxychloride within the pores of the activated carbon granules as hydrous metal oxide at a pH above 8 and above the pH whereat the hydrous metal oxide and activated charcoal have opposite zeta potentials.

Weller, J.P.

1987-09-08T23:59:59.000Z

440

Doped zinc oxide microspheres  

DOE Patents (OSTI)

A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

1993-12-14T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


441

Highly oxidized superconductors  

DOE Patents (OSTI)

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known synthesis in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed. 16 figs.

Morris, D.E.

1994-09-20T23:59:59.000Z

442

Highly oxidized superconductors  

DOE Patents (OSTI)

Novel superconducting materials in the form of compounds, structures or phases are formed by performing otherwise known syntheses in a highly oxidizing atmosphere rather than that created by molecular oxygen at atmospheric pressure or below. This leads to the successful synthesis of novel superconducting compounds which are thermodynamically stable at the conditions under which they are formed.

Morris, Donald E. (Kensington, CA)

1994-01-01T23:59:59.000Z

443

As you prepare for your upcoming beam time, please be aware that construction is planned to update SLAC Gate 17 with RFID proximity card access hardware and to change the stairs next to the Security hut to an ADA compliant ramp. Please forward this to your proposal collaborators (and ensure that all users have registered and completed training before they arrive). This construction is scheduled to begin Tuesday 5/28 and be completed by 6/28. During this construction, access to the LCLS and SSRL buildings and experimental facilities will be provided as follows: VEHICLES ONLY THROUGH GATE 17 5/28-6/28 0600-1530 (6 am-3:30 pm) Construction Zone. Only VEHICLE traffic will be allowed access through Gate 17 and flagman will provide traffic control. 1530-1800 (3:30-6:00 pm) Assumes construction will have stopped for the day; both traffic lanes will be open for vehicles. 1800-0600 (6 pm-6 am) As now, Gate 17 will be closed or barricaded overnight. PEDESTRIANS ONLY THROUGH GATE 16 5/28-6/28 The pedestrian turnstile at Gate 16A will not change. The turnstile is available for pedestrian use 24/7 as long as the individual has a valid SLAC ID badge (and there is a guard at Gate 30 to 'buzz' them through). 0700-1600 (6 am-4 pm) Pedestrians who would normally walk through Gate 17 will instead follow the detour to Gate 16 swing gate which will be unlocked and staffed by Security. A valid SLAC ID badge is needed to enter; new users without IDs will be allowed to proceed for check-in and badging after confirmation with the User Research Administration Office (see detour map attached). FYI - After the construction is completed and proximity card readers are fully functional, users and staff will enter Gates 17 and 30 using an activated RFID proximity card. More details to follow.  

NLE Websites -- All DOE Office Websites (Extended Search)

Automated Proximity Access at Gate 17 and Sector 30 Automated Proximity Access at Gate 17 and Sector 30 New SLAC ID badges with embedded RFID are used to activate these gates and for off-hours access at the main entrance off Sand Hill Road as well as Alpine Road (gates will be accessible 24/7) . New user badges include this proximity gate activation feature, but older photo IDs need to be updated. Users are advised to register, complete training and contact the User Research Administration (URA) office before arrival for beam time to help facilitate access. During the transition period, July 26-August 9, 2013 users can inform Security at Gate 17 that they are checking in and proceed to the URA office in Building 120; however, after August 9 th , users without a proximity activated ID need to stop at

444

Assessment of the global impact of aerosols on tropospheric oxidants  

E-Print Network (OSTI)

[1] We present here a fully coupled global aerosol and chemistry model for the troposphere. The model is used to assess the interactions between aerosols and chemical oxidants in the troposphere, including (1) the conversion from gas-phase oxidants into the condensed phase during the formation of aerosols, (2) the heterogeneous reactions occurring on the surface of aerosols, and (3) the effect of aerosols on ultraviolet radiation and photolysis rates. The present study uses the global three-dimensional chemical/ transport model, Model for Ozone and Related Chemical Tracers, version 2 (MOZART-2), in which aerosols are coupled with the model. The model accounts for the presence of

Xuexi Tie; Sasha Madronich; Stacy Walters; David P. Edwards; Paul Ginoux; Natalie Mahowald; Renyi Zhang; Chao Lou; Guy Brasseur

2005-01-01T23:59:59.000Z

445

ADVANCED OXIDATION PROCESS  

DOE Green Energy (OSTI)

The design of new, high efficiency and cleaner burning engines is strongly coupled with the removal of recalcitrant sulfur species, dibenzothiophene and its derivatives, from fuels. Oxidative desulfurization (ODS) wherein these dibenzothiophene derivatives are oxidized to their corresponding sulfoxides and sulfones is an approach that has gained significant attention. Fe-TAML{reg_sign} activators of hydrogen peroxide (TAML is Tetra-Amido-Macrocyclic-Ligand) convert in a catalytic process dibenzothiophene and its derivatives to the corresponding sulfoxides and sulfones rapidly at moderate temperatures (60 C) and ambient pressure. The reaction can be performed in both an aqueous system containing an alcohol (methanol, ethanol, or t-butanol) to solubilize the DBT and in a two-phase hydrocarbon/aqueous system where the alcohol is present in both phases and facilitates the oxidation. Under a consistent set of conditions using the FeBF{sub 2} TAML activator, the degree of conversion was found to be t-butanol > methanol > ethanol. In the cases of methanol and ethanol, both the sulfoxide and sulfone were observed while for t-butanol only the sulfone was detected. In the two-phase system, the alcohol may function as an inverse phase transfer agent. The oxidation was carried out using two different TAML activators. In homogeneous solution, approximately 90% oxidation of the DBT could be achieved using the prototype TAML activator, FeB*, by sonicating the solution at near room temperature. In bi-phasic systems conversions as high as 50% were achieved using the FeB* TAML activator and hydrogen peroxide at 100 C. The sonication method yielded only {approx}6% conversion but this may have been due to mixing.

Colin P. Horwitz; Terrence J. Collins

2003-10-22T23:59:59.000Z

446

Solid Oxide Fuel Cell Power Generation Systems  

Science Conference Proceedings (OSTI)

An increasing worldwide demand for premium power, emerging trend towards electric utility deregulation and distributed power generation, global environmental concerns and regulatory controls have accelerated the development of advanced fuel cell based power generation systems. Fuel cells convert chemical energy to electrical energy through electrochemical oxidation of gaseous and/or liquid fuels ranging from hydrogen to hydrocarbons. Electrochemical oxidation of fuels prevents the formation of Nox, while the higher efficiency of the systems reduces carbon dioxide emissions (kg/kWh). Among various fuel cell power generation systems currently being developed for stationary and mobile applications, solid oxide fuel cells (SOFC) offer higher efficiency (up to 80% overall efficiency in hybrid configurations), fuel flexibility, tolerance to CO poisoning, modularity, and use of non-noble construction materials of low strategic value. Tubular, planar, and monolithic cell and stack configurations are currently being developed for stationary and military applications. The current generation of fuel cells uses doped zirconia electrolyte, nickel cermet anode, doped Perovskite cathode electrodes and predominantly ceramic interconnection materials. Fuel cells and cell stacks operate in a temperature range of 800-1000 *C. Low cost ($400/kWe), modular (3-10kWe) SOFC technology development approach of the Solid State Energy Conversion Alliance (SECA) initiative of the USDOE will be presented and discussed. SOFC technology will be reviewed and future technology development needs will be addressed.

Singh, Prabhakar; Pederson, Larry R.; Simner, Steve P.; Stevenson, Jeffry W.; Viswanathan, Vish V.

2001-05-12T23:59:59.000Z

447

Lipid Oxidation Pathways, Volume 2  

Science Conference Proceedings (OSTI)

This book complements Lipid Oxidation Pathways, Volume 1. Lipid Oxidation Pathways, Volume 2 Health acid analysis aocs april articles chloropropanediol contaminants detergents dietary fats division divisions esters fats fatty food foods glycidol Health h

448

Oxygen sensitive, refractory oxide composition  

DOE Patents (OSTI)

Oxide compositions containing niobium pentoxide and an oxide selected from the group consisting of hafnia, titania, and zirconia have electrical conductivity characteristics which vary greatly depending on the oxygen content.

Holcombe, Jr., Cressie E. (Oak Ridge, TN); Smith, Douglas D. (Knoxville, TN)

1976-01-01T23:59:59.000Z

449

Cholesterol and Phytosterol Oxidation Products  

Science Conference Proceedings (OSTI)

This book comprehensively reviews several aspects of cholesterol oxidation products: cholesterol oxidation mechanisms, analytical determination, origin and content of these compounds in foods and biological samples, and their biological effects, with an em

450

Richard Gates  

Science Conference Proceedings (OSTI)

... NIST 1981 - 1987: Research Chemist, Tribochemistry Group, National Bureau of Standards 1978-1981: Chemist, Recycled Oil Program, National ...

2013-04-17T23:59:59.000Z

451

GATING CIRCUITS  

DOE Patents (OSTI)

Control circuits for vacuum tubes are described, and a binary counter having an improved trigger circuit is reported. The salient feature of the binary counter is the application of the input signal to the cathode of each of two vacuum tubes through separate capacitors and the connection of each cathode to ground through separate diodes. The control of the binary counter is achieved in this manner without special pulse shaping of the input signal. A further advantage of the circuit is the simplicity and minimum nuruber of components required, making its use particularly desirable in computer machines.

Merrill, L.C.

1958-10-14T23:59:59.000Z

452

Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide  

Science Conference Proceedings (OSTI)

Keywords: disilane, low temperature, nitrous oxide, plasma enhanced chemical vapor deposition, silicon oxide

Juho Song; G. S. Lee; P. K. Ajmera

1995-10-01T23:59:59.000Z

453

REVIEW OF PLUTONIUM OXIDATION LITERATURE  

Science Conference Proceedings (OSTI)

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles ( 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Korinko, P.

2009-11-12T23:59:59.000Z

454

REVIEW OF PLUTONIUM OXIDATION LITERATURE  

SciTech Connect

A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

Korinko, P.

2009-11-12T23:59:59.000Z

455

Multifunctional Oxide - Programmaster.org  

Science Conference Proceedings (OSTI)

Toshihiko Tani, Toyota Motor Engineering and Manufacturing North America, Inc. Scope, Multifunctional oxide ceramics and thin films exhibit fascinating...

456

General Poster Session (Electronic Format)  

Science Conference Proceedings (OSTI)

May 1, 2007 ... 47-52]In-Situ Chemical Oxidation of Soil Contaminated by Benzene, Lead and Cadmium[pp. 53-59]Development and Validation of High...

457

Interactions of cyclic nucleotidegated channel subunits and protein tyrosine kinase probed with genistein  

E-Print Network (OSTI)

abstract The cGMP sensitivity of cyclic nucleotidegated (CNG) channels can be modulated by changes in phosphorylation catalyzed by protein tyrosine kinases (PTKs) and protein tyrosine phosphatases. Previously, we used genistein, a PTK inhibitor, to probe the interaction between PTKs and homomeric channels comprised of ? subunits (RET?) of rod photoreceptor CNG channels expressed in Xenopus oocytes. We showed that in addition to inhibiting phosphorylation, genistein triggers a noncatalytic interaction between PTKs and homomeric RET? channels that allosterically inhibits channel gating. Here, we show that native CNG channels from rods, cones, and olfactory receptor neurons also exhibit noncatalytic inhibition induced by genistein, suggesting that in each of these sensory cells, CNG channels are part of a regulatory complex that contains PTKs. Native CNG channels are heteromers, containing ? as well as ? subunits. To determine the contributions of ? and ? subunits to genistein inhibition, we compared the effect of genistein on native, homomeric (RET ? and OLF?), and heteromeric (RET???, OLF???, and OLF??RET?) CNG channels. We found that genistein only inhibits channels that contain either the RET ? or the OLF ? subunits. This finding, along with other observations about the maximal effect of genistein and the Hill coefficient of genistein inhibition, suggests that the RET ? and OLF ? subunits contain binding sites for the PTK, whereas RET ? and OLF ? subunits do not. key words: cyclic guanosine monophosphate protein tyrosine kinase photoreceptor olfactory receptor neuron

Elena Molokanova; Alexei Savchenko; Richard H. Kramer

2000-01-01T23:59:59.000Z

458

Effect of gate-driven spin resonance on the conductance of a one-dimensional quantum wire  

E-Print Network (OSTI)

We consider quasiballistic electron transmission in a one-dimensional quantum wire subject to both time-independent and periodic potentials of a finger gate that results in a coordinate- and time-dependent Rashba-type spin-orbit coupling. A spin-dependent conductance is calculated as a function of external constant magnetic field, the electric field frequency, and the potential strength. The results demonstrate the effect of the gate-driven electric dipole spin resonance in a transport phenomenon such as spin-flip electron transmission.

Almas F. Sadreev; E. Ya. Sherman

2013-10-10T23:59:59.000Z

459

Tuning the Gate Opening Pressure of Metal Organic Frameworks (MOFs) for the Selective Separation of Hydro-carbons  

E-Print Network (OSTI)

Separation of hydrocarbons is one of the most energy demanding processes. The need to develop materials for the selective adsorption of hydrocarbons, under reasonable conditions, is therefore of paramount importance. This work unveils unexpected hydrocarbon selectivity in a flexible Metal Organic Framework (MOF), based on differences in their gate opening pressure. We show selectivity dependence on both chain length and specific framework-gas interaction. Combining Raman spectroscopy and theoretical van der Waals Density Functional (vdW-DF) calculations, the separation mechanisms governing this unexpected gate opening behavior are revealed.

Nijem, Nour; Canepa, Pieremanuele; Marti, Anne; Balkus,, Kenneth J; Thonhauser, T; Li, Jing; Chabal, Yves J; 10.1021/ja305754f

2012-01-01T23:59:59.000Z

460

Mechanistic aspects of photooxidation of polyhydroxylated molecules on metal oxides.  

Science Conference Proceedings (OSTI)

Polyhydroxylated molecules, including natural carbohydrates, are known to undergo photooxidation on wide-gap transition-metal oxides irradiated by ultraviolet light. In this study, we examine mechanistic aspects of this photoreaction on aqueous TiO{sub 2}, {alpha}-FeOOH, and {alpha}-Fe{sub 2}O{sub 3} particles using electron paramagnetic resonance (EPR) spectroscopy and site-selective deuteration. We demonstrate that the carbohydrates are oxidized at sites involved in the formation of oxo bridges between the chemisorbed carbohydrate molecule and metal ions at the oxide surface. This bridging inhibits the loss of water (which is the typical reaction of the analogous free radicals in bulk solvent) promoting instead a rearrangement that leads to elimination of the formyl radical. For natural carbohydrates, the latter reaction mainly involves carbon-1, whereas the main radical products of the oxidation are radical arising from H atom loss centered on carbon-1, -2, and -3 sites. Photoexcited TiO{sub 2} oxidizes all of the carbohydrates and polyols, whereas {alpha}-FeOOH oxidizes some of the carbohydrates, and {alpha}-Fe{sub 2}O{sub 3} is unreactive. These results serve as a stepping stone for understanding the photochemistry on mineral surfaces of more complex biomolecules such as nucleic acids.

Shkrob, I. A.; Marin, T. M.; Sevilla, M. D.; Chemerisov, S. (Chemical Sciences and Engineering Division); (Benedictine Univ.); (Oakland Univ.)

2011-03-24T23:59:59.000Z

Note: This page contains sample records for the topic "gate oxide formation" from the National Library of EnergyBeta (NLEBeta).
While these samples are representative of the content of NLEBeta,
they are not comprehensive nor are they the most current set.
We encourage you to perform a real-time search of NLEBeta
to obtain the most current and comprehensive results.


461

Oxidative decomposition of formaldehyde catalyzed by a bituminous coal  

Science Conference Proceedings (OSTI)

It has been observed that molecular hydrogen is formed during long-term storage of bituminous coals via oxidative decomposition of formaldehyde by coal surface peroxides. This study has investigated the effects of coal quantity, temperature, and water content on the molecular hydrogen formation with a typical American coal (Pittsburgh No. 6). The results indicate that the coal's surface serves as a catalyst in the formation processes of molecular hydrogen. Furthermore, the results also indicate that low temperature emission of molecular hydrogen may possibly be the cause of unexplained explosions in confined spaces containing bituminous coals, for example, underground mines or ship holds. 20 refs., 4 figs., 6 tabs.

Haim Cohen; Uri Green [Ariel University Center in Samaria, Beer Sheva (Israel). Biological Chemistry Department

2009-05-15T23:59:59.000Z

462

Selective methane oxidation over promoted oxide catalysts  

DOE Green Energy (OSTI)

Principal accomplishments have been achieved in all three areas of selective catalytic oxidation of methane that have been pursued in this research project. These accomplishments are centered on the development of catalyst systems that produce high space time yields of C{sub 2} hydrocarbon products, formaldehyde, and methanol from methane/air mixtures at moderate temperatures and at ambient pressure. The accomplishments can be summarized as the following: the SO{sub 4}{sup 2{minus}}/SrO/La{sub 2}O{sub 3} catalyst developed here has been further optimized to produce 2 kg of C{sub 2} hydrocarbons/kg catalyst/hr at 550C; V{sub 2}O{sub 5}SiO{sub 2} catalysts have been prepared that produce up to 1.5 kg formaldehyde/kg catalyst/hr at 630C with CO{sub 2} selectivities; and a novel dual bed catalyst system has been designed and tested that produces over 100 g methanol/kg catalyst/hr at 600C.

Klier, K.; Herman, R.G.

1995-06-01T23:59:59.000Z

463

Market Structure Across Retail Formats  

Science Conference Proceedings (OSTI)

We study how market structure within a product category varies across retail formats. Building on the literature on internal market structure, we estimate a joint store and brand choice model where the loading matrix of brand attributes are allowed to ... Keywords: brand maps, heterogeniety, market structure, retail formats

Karsten Hansen; Vishal Singh

2009-07-01T23:59:59.000Z

464

Controlled CO preferential oxidation  

DOE Green Energy (OSTI)

Method for controlling the supply of air to a PROX reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference therebetween correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference.

Meltser, Mark A. (Pittsford, NY); Hoch, Martin M. (Webster, NY)

1997-01-01T23:59:59.000Z

465

Chemical oxidizers treat wastewater  

SciTech Connect

Based on the inherent benefits of these original oxidation systems, a second generation of advanced oxidation processes (AOPs) has emerged. These processes combine key features of the first generation technologies with more sophisticated advances in UV technology, such as the new pulsed plasma xenon flash lamp that emits high-energy, high-intensity UV light. Second generation systems can be equipped with a transmittance controller to prevent lamp fouling or scaling. The coupling of the first generation's technology with the new UV sources provides the rapid destruction of chlorinated and nonchlorinated hydrocarbons and humic acids from contaminated water. It also is effective in the treatment of organic laden gases from soil vapor extraction systems. AOPs may promote the oxidation (and subsequent removal) of heavy metals in water, though few data are available to verify the claim. The success of AOPs, including ozonation with UV light, hydrogen peroxide with UV light and advanced photolysis, is linked with their creation of hydroxyl-free radicals (OH[center dot]) that are effective in eliminating contaminants such as formaldehyde, chlorinated hydrocarbons and chlorinated solvents. Hydroxyl free-radicals are consumed in microsecond reactions and exhibit little substrate selectivity with the exception of halogenated alkanes such as chloroform. They can act as chain carriers. Given their power, hydroxyl free-radicals react with virtually all organic solutes more quickly (especially in water) than any other oxidants, except fluorine. There are projects that have found the combination of some AOPs to be the most efficient organic destruction techniques for the job. For example, one project successfully remediated groundwater contaminated with gasoline and Number 2 diesel through successive treatments of ozone and hydrogen peroxide with ultraviolet light, followed by granular activated carbon. 5 refs., 2 tabs.

Stephenson, F.A. (Dames Moore, Phoenix, AZ (United States))

1992-12-01T23:59:59.000Z

466

Applications of Oxide Superconductors  

Science Conference Proceedings (OSTI)

The discovery of the new family of copper-oxide superconductors has opened an area of exciting new materials science with enormous potential for practical developments in technology and engineering. Research was conducted to understand the basic physical properties and the materials characteristics of the high temperature superconductors that control their electrical and mechanical properties, and determine their potential usefulness. Material properties and current carrying capabilites of the new Bismut...

1993-09-29T23:59:59.000Z

467

Oxides for Spintronics - Programmaster.org  

Science Conference Proceedings (OSTI)

About this Abstract. Meeting, Materials Science & Technology 2013. Symposium, Multifunctional Oxides. Presentation Title, Oxides for Spintronics. Author(s)...

468

MESOPOROUS METAL OXIDE MICROSPHERE ELECTRODE COMPOSITIONS AND ...  

Compositions and methods of making are provided for mesoporous metal oxide microspheres electrodes. The mesoporous metal oxide microsphere ...

469

formatting | OpenEI Community  

Open Energy Info (EERE)

formatting formatting Home Jweers's picture Submitted by Jweers(83) Contributor 7 August, 2013 - 18:23 New Robust References! citation citing developer formatting reference Semantic Mediawiki wiki Check out the new Reference Form. Adding a reference object to OpenEI using this form is the most complete way to cite a reference. After providing the name of your reference, the form will ask for your document type. Rmckeel's picture Submitted by Rmckeel(297) Contributor 25 June, 2013 - 07:39 How to create formatted blocks to hold OpenEI wiki content content formatting user interface wiki The OpenEI wiki frontpage uses "boxes" that help organize content. These boxes are frequently re-used across the site. Syndicate content 429 Throttled (bot load) Error 429 Throttled (bot load)

470

Selective oxidation of methanol and ethanol on supported ruthenium oxide clusters at low temperatures  

DOE Green Energy (OSTI)

RuO2 domains supported on SnO2, ZrO2, TiO2, Al2O3, and SiO2 catalyze the oxidative conversion of methanol to formaldehyde, methylformate, and dimethoxymethane with unprecedented rates and high combined selectivity (>99 percent) and yield at low temperatures (300-400 K). Supports influence turnover rates and the ability of RuO2 domains to undergo redox cycles required for oxidation turnovers. Oxidative dehydrogenation turnover rates and rates of stoichiometric reduction of RuO2 in H2 increased in parallel when RuO2 domains were dispersed on more reducible supports. These support effects, the kinetic effects of CH3OH and O2 on reaction rates, and the observed kinetic isotope effects with CH3OD and CD3OD reactants are consistent with a sequence of elementary steps involving kinetically relevant H-abstraction from adsorbed methoxide species using lattice oxygen atoms and with methoxide formation in quasi-equilibrated CH3OH dissociation on nearly stoichiometric RuO2 surfaces. Anaerobic transient experiments confirmed that CH3OH oxidation to HCHO requires lattice oxygen atoms and that selectivities are not influenced by the presence of O2. Residence time effects on selectivity indicate that secondary HCHO-CH3OH acetalization reactions lead to hemiacetal or methoxymethanol intermediates that convert to dimethoxymethane in reactions with CH3OH on support acid sites or dehydrogenate to form methylformate on RuO2 and support redox sites. These conclusions are consistent with the tendency of Al2O3 and SiO2 supports to favor dimethoxymethane formation, while SnO2, ZrO2, and TiO2 preferentially form methylformate. These support effects on secondary reactions were confirmed by measured CH3OH oxidation rates and selectivities on physical mixtures of supported RuO2 catalysts and pure supports. Ethanol also reacts on supported RuO2 domains to form predominately acetaldehyde and diethoxyethane at 300-400 K. The bifunctional nature of these reaction pathways and the remarkable ability of RuO2-based catalysts to oxidize CH3OH to HCHO at unprecedented low temperatures introduce significant opportunities for new routes to complex oxygenates, including some containing C-C bonds, using methanol or ethanol as intermediates derived from natural gas or biomass.

Liu, Haichao; Iglesia, Enrique

2004-03-04T23:59:59.000Z