National Library of Energy BETA

Sample records for gate oxide formation

  1. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Looking at Transistor Gate Oxide Formation in Real Time Print The oxide gate layer is critical to every transistor, and present-day layer thicknesses are in the 10-20 range (1-2...

  2. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    using this beamline were able to chart the rate of oxidation of silicon in the gate oxide layer for the first time. Understanding the rate of oxidation in this crucial layer...

  3. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at Transistor Gate

  4. Characterization and production metrology of thin transistor gate oxide lms

    E-Print Network [OSTI]

    Garfunkel, Eric

    Review Characterization and production metrology of thin transistor gate oxide ®lms Alain C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122 4. XRR and NR characterization of thin oxide ®lms . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 5.2. Optical models of thin gate ®lms

  5. Tradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits

    E-Print Network [OSTI]

    Sapatnekar, Sachin

    lead to gate oxide leakage current (Igate), are coming into play from the 90nm node onwards. AccordingTradeoffs between Gate Oxide Leakage and Delay for Dual ToxToxTox Circuits Anup Kumar Sultania Department of ECE University of Minnesota Minneapolis, MN 55455. sachin@ece.umn.edu ABSTRACT Gate oxide

  6. Abstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause severe lifetime degradation in

    E-Print Network [OSTI]

    Lipasti, Mikko H.

    affect device performance and lead to timing violations; as well as gate-oxide wearout [3] which can probability of oxide breakdown, leading to a hard failure of a device that exceeds its intended (or targetedAbstract--Bias temperature instability, hot-carrier injection, and gate-oxide wearout will cause

  7. Quantum Insights in Gate Oxide Charge-Trapping Dynamics in Nanoscale MOSFETs

    E-Print Network [OSTI]

    Dimov, Ivan

    , in this paper we investigate the trapping of a single electron in the gate oxide of a 25nm transistor including and scattering phenomena. Keywords--Reliability; Tunneling; Scattering; NBTI; RTN; Wigner Function; charge-trapping. The evolution of an initial electron packet subject to the action of device channel potential and the oxide trap

  8. Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology 

    E-Print Network [OSTI]

    Lu, Jiang

    2007-04-25

    A novel high-k gate dielectric material, i.e., hafnium-doped tantalum oxide (Hf-doped TaOx), has been studied for the application of the future generation metal-oxidesemiconductor field effect transistor (MOSFET). The film's electrical, chemical...

  9. In situ oxidation of subsurface formations

    DOE Patents [OSTI]

    Beer, Gary Lee (Houston, TX); Mo, Weijian (Sugar Land, TX); Li, Busheng (Houston, TX); Shen, Chonghui (Calgary, CA)

    2011-01-11

    Methods and systems for treating a hydrocarbon containing formation described herein include providing heat to a first portion of the formation from a plurality of heaters in the first portion, producing produced through one or more production wells in a second portion of the formation, reducing or turning off heat provided to the first portion after a selected time, providing an oxidizing fluid through one or more of the heater wells in the first portion, providing heat to the first portion and the second portion through oxidation of at least some hydrocarbons in the first portion, and producing fluids through at least one of the production wells in the second portion. The produced fluids may include at least some oxidized hydrocarbons produced in the first portion.

  10. Aromatics oxidation and soot formation in flames

    SciTech Connect (OSTI)

    Howard, J.B.; Pope, C.J.; Shandross, R.A.; Yadav, T. [Massachusetts Institute of Technology, Cambridge (United States)

    1993-12-01

    This project is concerned with the kinetics and mechanisms of aromatics oxidation and soot and fullerenes formation in flames. The scope includes detailed measurements of profiles of stable and radical species concentrations in low-pressure one-dimensional premixed flames. Intermediate species identifications and mole fractions, fluxes, and net reaction rates calculated from the measured profiles are used to test postulated reaction mechanisms. Particular objectives are to identify and to determine or confirm rate constants for the main benzene oxidation reactions in flames, and to characterize fullerenes and their formation mechanisms and kinetics.

  11. Microbial-mediated method for metal oxide nanoparticle formation...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Search Title: Microbial-mediated method for metal oxide nanoparticle formation The invention is directed to a method for producing metal oxide nanoparticles, the method...

  12. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    and S.-K Kim (Seoul National University, Korea). Research funding: the U.S. Department of Energy; the Humboldt Foundation (Germany); the Helmholtz Association (Germany); the...

  13. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCenter (LMI-EFRC)Lodging LodgingLogisticsLong-Term

  14. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCenter (LMI-EFRC)Lodging LodgingLogisticsLong-TermLooking at

  15. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformationJesse BergkampCenter (LMI-EFRC)Lodging LodgingLogisticsLong-TermLooking

  16. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at Transistor

  17. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at TransistorLooking

  18. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking at

  19. Looking at Transistor Gate Oxide Formation in Real Time

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would likeUniverseIMPACTThousand CubicResourcelogo and-E CChinaC L SLooking atLooking at

  20. Ionizing radiation induced leakage current on ultra-thin gate oxides

    SciTech Connect (OSTI)

    Scarpa, A.; Paccagnella, A.; Montera, F.; Ghibaudo, G.; Pananakakis, G.; Fuochi, P.G.

    1997-12-01

    MOS capacitors with a 4.4 nm thick gate oxide have been exposed to {gamma} radiation from a Co{sup 60} source. As a result, the authors have measured a stable leakage current at fields lower than those required for Fowler-Nordheim tunneling. This Radiation Induced Leakage Current (RILC) is similar to the usual Stress Induced Leakage Currents (SILC) observed after electrical stresses of MOS devices. They have verified that these two currents share the same dependence on the oxide field, and the RILC contribution can be normalized to an equivalent injected charge for Constant Current Stresses. They have also considered the dependence of the RILC from the cumulative radiation dose, and from the applied bias during irradiation, suggesting a correlation between RILC and the distribution of trapped holes and neutral levels in the oxide layer.

  1. Top-gate zinc tin oxide thin-film transistors with high bias and environmental stress stability

    SciTech Connect (OSTI)

    Fakhri, M.; Theisen, M.; Behrendt, A.; Görrn, P.; Riedl, T. [Institute of Electronic Devices, University of Wuppertal, Wuppertal 42119 (Germany)

    2014-06-23

    Top gated metal-oxide thin-film transistors (TFTs) provide two benefits compared to their conventional bottom-gate counterparts: (i) The gate dielectric may concomitantly serve as encapsulation layer for the TFT channel. (ii) Damage of the dielectric due to high-energetic particles during channel deposition can be avoided. In our work, the top-gate dielectric is prepared by ozone based atomic layer deposition at low temperatures. For ultra-low gas permeation rates, we introduce nano-laminates of Al{sub 2}O{sub 3}/ZrO{sub 2} as dielectrics. The resulting TFTs show a superior environmental stability even at elevated temperatures. Their outstanding stability vs. bias stress is benchmarked against bottom-gate devices with encapsulation.

  2. Heating subsurface formations by oxidizing fuel on a fuel carrier

    DOE Patents [OSTI]

    Costello, Michael; Vinegar, Harold J.

    2012-10-02

    A method of heating a portion of a subsurface formation includes drawing fuel on a fuel carrier through an opening formed in the formation. Oxidant is supplied to the fuel at one or more locations in the opening. The fuel is combusted with the oxidant to provide heat to the formation.

  3. Ceramic oxide powders and the formation thereof

    DOE Patents [OSTI]

    Katz, Joseph L. (Baltimore, MD); Hung, Cheng-Hung (Baltimore, MD)

    1993-01-01

    Ceramic oxide powders and a method for their preparation. Ceramic oxide powders are obtained using a flame process whereby two or more precursors of ceramic oxides are introduced into a counterflow diffusion flame burner wherein said precursors are converted into ceramic oxide powders. The morphology, particle size, and crystalline form of the ceramic oxide powders are determined by process conditions.

  4. Ceramic oxide powders and the formation thereof

    DOE Patents [OSTI]

    Katz, J.L.; Chenghung Hung.

    1993-12-07

    Ceramic oxide powders and a method for their preparation. Ceramic oxide powders are obtained using a flame process whereby two or more precursors of ceramic oxides are introduced into a counterflow diffusion flame burner wherein said precursors are converted into ceramic oxide powders. The morphology, particle size, and crystalline form of the ceramic oxide powders are determined by process conditions. 14 figures.

  5. IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 6, JUNE 1998 1361 Degradation of Thin Tunnel Gate Oxide

    E-Print Network [OSTI]

    Schroder, Dieter K.

    IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 45, NO. 6, JUNE 1998 1361 Degradation of Thin Tunnel. Schroder, Fellow, IEEE Abstract-- The degradation of thin tunnel gate oxide under constant Fowler charge trapping is usually dominant at low QQQinjinjinj followed by negative charge trapping at high

  6. Formation of metal oxides by cathodic arc deposition

    SciTech Connect (OSTI)

    Anders, S.; Anders, A.; Rubin, M.; Wang, Z.; Raoux, S.; Kong, F.; Brown, I.G.

    1995-03-01

    Metal oxide thin films are of interest for a number of applications. Cathodic arc deposition, an established, industrially applied technique for formation of nitrides (e.g. TiN), can also be used for metal oxide thin film formation. A cathodic arc plasma source with desired cathode material is operated in an oxygen atmosphere, and metal oxides of various stoichiometric composition can be formed on different substrates. We report here on a series of experiments on metal oxide formation by cathodic arc deposition for different applications. Black copper oxide has been deposited on ALS components to increase the radiative heat transfer between the parts. Various metal oxides such as tungsten oxide, niobium oxide, nickel oxide and vanadium oxide have been deposited on ITO glass to form electrochromic films for window applications. Tantalum oxide films are of interest for replacing polymer electrolytes. Optical waveguide structures can be formed by refractive index variation using oxide multilayers. We have synthesized multilayers of Al{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/AI{sub 2}O{sub 3}/Si as possible basic structures for passive optoelectronic integrated circuits, and Al{sub 2-x}Er{sub x}O{sub 3} thin films with a variable Er concentration which is a potential component layer for the production of active optoelectronic integrated devices such as amplifiers or lasers at a wavelength of 1.53 {mu}m. Aluminum and chromium oxide films have been deposited on a number of substrates to impart improved corrosion resistance at high temperature. Titanium sub-oxides which are electrically conductive and corrosion resistant and stable in a number of aggressive environments have been deposited on various substrates. These sub-oxides are of great interest for use in electrochemical cells.

  7. Use of a hard mask for formation of gate and dielectric via nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR)

    2001-01-01

    A process for fabricating a nanofilament field emission device in which a via in a dielectric layer is self-aligned to gate metal via structure located on top of the dielectric layer. By the use of a hard mask layer located on top of the gate metal layer, inert to the etch chemistry for the gate metal layer, and in which a via is formed by the pattern from etched nuclear tracks in a trackable material, a via is formed by the hard mask will eliminate any erosion of the gate metal layer during the dielectric via etch. Also, the hard mask layer will protect the gate metal layer while the gate structure is etched back from the edge of the dielectric via, if such is desired. This method provides more tolerance for the electroplating of a nanofilament in the dielectric via and sharpening of the nanofilament.

  8. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films 

    E-Print Network [OSTI]

    Lin, Chen-Han

    2012-10-19

    nanoparticles. These results can be important to the novel metal gate/high-k/Si MOS structure. The Ru-modified ZrHfO gate dielectric film showed a large breakdown voltage and a long lifetime. The conventional polycrystalline Si (poly-Si) charge trapping layer...

  9. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    SciTech Connect (OSTI)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji Shimura, Takayoshi; Watanabe, Heiji; Ogawa, Shingo; Yoshigoe, Akitaka; Teraoka, Yuden

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56?nm and very low interface state density of 2.4?×?10{sup 11?}cm{sup ?2}eV{sup ?1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  10. Recovery from ultraviolet-induced threshold voltage shift in indium gallium zinc oxide thin film transistors by positive gate bias

    SciTech Connect (OSTI)

    Liu, P.; Chen, T. P.; Li, X. D.; Wong, J. I.; Liu, Z.; Liu, Y.; Leong, K. C.

    2013-11-11

    The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (V{sub th}) of amorphous indium gallium zinc oxide thin film transistors (TFTs) and its recovery characteristics were investigated. The V{sub th} exhibited a significant negative shift after UV exposure. The V{sub th} instability caused by UV illumination is attributed to the positive charge trapping in the dielectric layer and/or at the channel/dielectric interface. The illuminated devices showed a slow recovery in threshold voltage without external bias. However, an instant recovery can be achieved by the application of positive gate pulses, which is due to the elimination of the positive trapped charges as a result of the presence of a large amount of field-induced electrons in the interface region.

  11. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides

    SciTech Connect (OSTI)

    Ceschia, M.; Paccagnella, A.; Cester, A.; Scarpa, A.; Ghidini, G.

    1998-12-01

    Low-field leakage current has been measured in thin oxides after exposure to ionizing radiation. This Radiation Induced Leakage Current (RILC) can be described as an inelastic tunneling process mediated by neutral traps in the oxide, with an energy loss of about 1 eV. The neutral trap distribution is influenced by the oxide field applied during irradiation, thus indicating that the precursors of the neutral defects are charged, likely being defects associated to trapped holes. The maximum leakage current is found under zero-field condition during irradiation, and it rapidly decreases as the field is enhanced, due to a displacement of the defect distribution across the oxide towards the cathodic interface. The RILC kinetics are linear with the cumulative dose, in contrast with the power law found on electrically stressed devices.

  12. Solution mining and heating by oxidation for treating hydrocarbon containing formations

    DOE Patents [OSTI]

    Vinegar, Harold J. (Bellaire, TX); Stegemeier, George Leo (Houston, TX)

    2009-06-23

    A method for treating an oil shale formation comprising nahcolite includes providing a first fluid to a portion of the formation. A second fluid is produced from the portion. The second fluid includes at least some nahcolite dissolved in the first fluid. A controlled amount of oxidant is provided to the portion of the formation. Hydrocarbon fluids are produced from the formation.

  13. Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

    SciTech Connect (OSTI)

    Kamioka, J.; Oda, S.; Kodera, T.; Takeda, K.; Obata, T.; Tarucha, S.

    2014-05-28

    The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

  14. Nanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes

    E-Print Network [OSTI]

    Nair, Sankar

    made from metal oxides -- work that could lead to a technique for precisely conNanotube Formation: Researchers Learn To Control The Dimensions Of Metal Oxide Nanotubes Science their diameter and length. Based on metal oxides in combination with silicon and germanium, such single

  15. The Formation of Pb(IV) Oxides in Chlorinated Water

    SciTech Connect (OSTI)

    Lytle, Darren A.; Schock, Michael R. (EPA)

    2008-06-09

    Recent research has shown that Pb(IV) oxides play a significant geochemical role in drinking water distribution systems. However, most of the guidance for lead control in drinking water is based on the presumption that Pb(II) solids control lead solubility. Therefore, a better understanding of the chemistry of Pb(IV) in water is needed. Long-term lead precipitation experiments were conducted in chlorinated water (1-3 mg/L Cl{sub 2}) at pH 6.5,8, and 10, with and without sulfate. Results showed that two Pb(IV) dioxide polymorphs-plattnerite ({beta}-PbO{sub 2}) and scrutinyite ({alpha}-PbO{sub 2})-formed over time, as long as a high suspension redox potential was maintained with free chlorine. Neither mineral formed spontaneously, and the rate of formation increased with increasing pH. Hydrocerrusite and/or cerrusite initially precipitated out and overtime either disappeared or coexisted with PbO{sub 2}. Water pH dictated mineralogical presence. High pH favored hydrocerrusite and scrutinyite; low pH favored cerrusite and plattnerite. Along with a transformation of Pb(II) to Pb(IV) came a change in particle color from white to a dark shade of red to dark grey (differing with pH) and a decrease in lead solubility. If free chlorine was permitted to dissipate, the aging processes (i.e., mineralogy, color, and solubility) were reversible.

  16. Formation of thin walled ceramic solid oxide fuel cells

    DOE Patents [OSTI]

    Claar, Terry D. (Tisle, IL); Busch, Donald E. (Hinsdale, IL); Picciolo, John J. (Lockport, IL)

    1989-01-01

    To reduce thermal stress and improve bonding in a high temperature monolithic solid oxide fuel cell (SOFC), intermediate layers are provided between the SOFC's electrodes and electrolyte which are of different compositions. The intermediate layers are comprised of a blend of some of the materials used in the electrode and electrolyte compositions. Particle size is controlled to reduce problems involving differential shrinkage rates of the various layers when the entire structure is fired at a single temperature, while pore formers are provided in the electrolyte layers to be removed during firing for the formation of desired pores in the electrode layers. Each layer includes a binder in the form of a thermosetting acrylic which during initial processing is cured to provide a self-supporting structure with the ceramic components in the green state. A self-supporting corrugated structure is thus formed prior to firing, which the organic components of the binder and plasticizer removed during firing to provide a high strength, high temperature resistant ceramic structure of low weight and density.

  17. High mobility field effect transistor based on BaSnO{sub 3} with Al{sub 2}O{sub 3} gate oxide

    SciTech Connect (OSTI)

    Park, Chulkwon; Kim, Useong; Ju, Chan Jong; Park, Ji Sung; Kim, Young Mo; Char, Kookrin

    2014-11-17

    We fabricated an n-type accumulation-mode field effect transistor based on BaSnO{sub 3} transparent perovskite semiconductor, taking advantage of its high mobility and oxygen stability. We used the conventional metal-insulator-semiconductor structures: (In,Sn){sub 2}O{sub 3} as the source, drain, and gate electrodes, Al{sub 2}O{sub 3} as the gate insulator, and La-doped BaSnO{sub 3} as the semiconducting channel. The Al{sub 2}O{sub 3} gate oxide was deposited by atomic layer deposition technique. At room temperature, we achieved the field effect mobility value of 17.8?cm{sup 2}/Vs and the I{sub on}/I{sub off} ratio value higher than 10{sup 5} for V{sub DS}?=?1?V. These values are higher than those previously reported on other perovskite oxides, in spite of the large density of threading dislocations in the BaSnO{sub 3} on SrTiO{sub 3} substrates. However, a relatively large subthreshold swing value was found, which we attribute to the large density of charge traps in the Al{sub 2}O{sub 3} as well as the threading dislocations.

  18. Porous anodic aluminum oxide scaffolds; formation mechanisms and applications

    E-Print Network [OSTI]

    Oh, Jihun

    2010-01-01

    Nanoporous anodic aluminium oxide (AAO) can be created with pores that self-assemble into ordered configurations. Nanostructured metal oxides have proven to be very useful as scaffolds for growth of nanowires and nanotubes ...

  19. Formation of thin film Tl-based high-Tc? superconducting oxides from amorphous alloy precursors 

    E-Print Network [OSTI]

    Williams, John Charles

    1991-01-01

    FORMATION OF THIN FILM Tl-BASED HIGH-Tc SUPERCONDUCTING OXIDES FROM AMORPHOUS ALLOY PRECURSORS A Thesis JOHN CHARLES WILLIAMS Submitted to the Once of Graduate Studies of Texas A&M University in partial fulfillment of the requirements... for the degree of MASTER OF SCIENCE December 1991 Major Subject: Physics FORMATION OF THIN FILM Tl BASED HIGH Tc SUPERCONDUCTING OXIDES FROM AMORPHOUS ALLOY PRECURSORS A Thesis JOHN CHARLES WILLIAMS Approved as to style and content by: Donald G. Naugle...

  20. OH-initiated oxidation of benzene Part I. Phenol formation under atmospheric conditions

    E-Print Network [OSTI]

    OH-initiated oxidation of benzene Part I. Phenol formation under atmospheric conditions Rainer-radical initiated oxidation of benzene was studied in two simulation chambers: (1) the large-volume outdoor chamber-red spectroscopy (FTIR) were used to simultaneously measure phenol and benzene. The second study used only FTIR

  1. Compact modeling of quantum effects in double gate MOSFETs

    E-Print Network [OSTI]

    Wang, Wei

    2007-01-01

    However, ultrathin gate oxide will lead to high gate leakagethe high enough oxide barrier confinement leads to zero waveoxide becomes significant. The random dopant fluctuation effects increase with shrinking device size and leads

  2. The formation of crystals in glasses containing rare earth oxides

    SciTech Connect (OSTI)

    Fadzil, Syazwani Mohd [Pohang University of Science and Technology (POSTECH), Pohang (Korea, Republic of); Hrma, Pavel [Pohang University of Science and Technology (POSTECH), Pohang, South Korea and Pacific Northwest National Laboratory, Richland, Washington (United States); Crum, Jarrod [Pacific Northwest National Laboratory, Richland, Washington (United States); Siong, Khoo Kok; Ngatiman, Mohammad Fadzlee; Said, Riduan Mt [National University of Malaysia, Bandar Baru Bangi, Selangor (Malaysia)

    2014-02-12

    Korean spent nuclear fuel will reach the capacity of the available temporary storage by 2016. Pyroprocessing and direct disposal seems to be an alternative way to manage and reuse spent nuclear fuel while avoiding the wet reprocessing technology. Pyroprocessing produces several wastes streams, including metals, salts, and rare earths, which must be converted into stabilized form. A suitable form for rare earth immobilization is borosilicate glass. The borosilicate glass form exhibits excellent durability, allows a high waste loading, and is easy to process. In this work, we combined the rare earths waste of composition (in wt%) 39.2Nd{sub 2}O{sub 3}–22.7CeO{sub 2}–11.7La{sub 2}O{sub 3}–10.9PrO{sub 2}–1.3Eu{sub 2}O{sub 3}–1.3Gd{sub 2}O{sub 3}–8.1Sm{sub 2}O{sub 3}–4.8Y{sub 2}O{sub 3} with a baseline glass of composition 60.2SiO{sub 2}–16.0B{sub 2}O{sub 3}–12.6Na{sub 2}O–3.8Al{sub 2}O{sub 3}–5.7CaO–1.7ZrO{sub 2}. Crystallization in waste glasses occurs as the waste loading increases. It may produce complicate glass processing and affect the product quality. To study crystal formation, we initially made glasses containing 5%, 10% and 15% of La{sub 2}O{sub 3} and then glasses with 5%, 10% and 15% of the complete rare earth mix. Samples were heat-treated for 24 hours at temperatures 800°C to 1150°C in 50°C increments. Quenched samples were analyzed using an optical microscope, scanning electron microscope with energy dispersive spectroscopy, and x-ray diffraction. Stillwellite (LaBSiO{sub 5}) and oxyapatite (Ca{sub 2}La{sub 8}Si{sub 6}O{sub 26}) were found in glasses containing La{sub 2}O{sub 3}, while oxyapatite (Ca{sub 2}La{sub 8}Si{sub 6}O{sub 26} and NaNd{sub 9}Si{sub 6}O{sub 26}) precipitated in glasses with additions of mixed rare earths. The liquidus temperature (T{sub L}) of the glasses containing 5%, 10% and 15% La{sub 2}O{sub 3} were 800°C, 959°C and 986°C, respectively; while T{sub L} was 825°C, 1059°C and 1267°C for glasses with 5%, 10% and 15% addition of mixed rare earth oxides. The component coefficients T{sub B2O3}, T{sub SiO2}, T{sub CaO}, and T{sub RE2O3} were also evaluated using a recently published study.

  3. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor

    E-Print Network [OSTI]

    Florida, University of

    2011; published online 21 March 2011 A subnanometer thick interfacial oxide layer present between used to characterize a Ni/AlGaN interfacial oxide layer with subnanometer thickness. The semiconducting

  4. In situ secondary organic aerosol formation from ambient pine forest air using an oxidation flow reactor

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Palm, B. B.; Campuzano-Jost, P.; Ortega, A. M.; Day, D. A.; Kaser, L.; Jud, W.; Karl, T.; Hansel, A.; Hunter, J. F.; Cross, E. S.; et al

    2015-11-04

    Ambient air was oxidized by OH radicals in an oxidation flow reactor (OFR) located in a montane pine forest during the BEACHON-RoMBAS campaign to study biogenic secondary organic aerosol (SOA) formation and aging. High OH concentrations and short residence times allowed for semi-continuous cycling through a large range of OH exposures ranging from hours to weeks of equivalent (eq.) atmospheric aging. A simple model is derived and used to account for the relative time scales of condensation of low volatility organic compounds (LVOCs) onto particles, condensational loss to the walls, and further reaction to produce volatile, non-condensing fragmentation products. Moremore »SOA production was observed in the OFR at nighttime (average 4 ?g m-3 when LVOC fate corrected) compared to daytime (average 1 ?g m-3 when LVOC fate corrected), with maximum formation observed at 0.4–1.5 eq. days of photochemical aging. SOA formation followed a similar diurnal pattern to monoterpenes, sesquiterpenes, and toluene + p-cymene concentrations, including a substantial increase just after sunrise at 07:00 LT. Higher photochemical aging (> 10 eq. days) led to a decrease in new SOA formation and a loss of preexisting OA due to heterogeneous oxidation followed by fragmentation and volatilization. When comparing two different commonly used methods of OH production in OFRs (OFR185 and OFR254), similar amounts of SOA formation were observed. We recommend the OFR185 mode for future forest studies. Concurrent gas-phase measurements of air after OH oxidation illustrate the decay of primary VOCs, production of small oxidized organic compounds, and net production at lower ages followed by net consumption of terpenoid oxidation products as photochemical age increased. New particle formation was observed in the reactor after oxidation, especially during times when precursor gas concentrations and SOA formation were largest. Approximately 6 times more SOA was formed in the reactor from OH oxidation than could be explained by the VOCs measured in ambient air. Several recently-developed instruments quantified ambient semi- and intermediate-volatility organic compounds (S/IVOCs) that were not detected by a PTR-TOF-MS. An SOA yield of 24–80 % from those compounds can explain the observed SOA, suggesting that these typically unmeasured S/IVOCs play a substantial role in ambient SOA formation. Our results allow ruling out condensation sticking coefficients much lower than 1. Our measurements help clarify the magnitude of SOA formation in forested environments, and demonstrate methods for interpretation of ambient OFR measurements.« less

  5. Kinetic model for nitric oxide formation during pulverized coal combustion

    SciTech Connect (OSTI)

    Mitchell, J.W.; Tarbell, J.M.

    1982-03-01

    A mathematical model of NO formation during pulverised coal combustion was developed from a proposed kinetic mechanism involving 12 overall chemical reactions. Most significantly, the model describes the complex conversion of coal bound nitrogen compounds to NO during combustion. The predictions of the model compare favourably with literature data and are in qualitative agreement with trends observed in practical coal combustion.

  6. Al{sub 2}O{sub 3}/GeO{sub x} gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method

    SciTech Connect (OSTI)

    Yang, Xu; Zeng, Zhen-Hua [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China); Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Wang, Sheng-Kai, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn; Sun, Bing; Zhao, Wei; Chang, Hu-Dong; Liu, Honggang, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xiong, E-mail: wangshengkai@ime.ac.cn, E-mail: xzhang62@aliyun.com, E-mail: liuhonggang@ime.ac.cn [Advanced Photonics Center, School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)

    2014-09-01

    Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stack fabricated by an in situ cycling ozone oxidation (COO) method in the atomic layer deposition (ALD) system at low temperature is systematically investigated. Excellent electrical characteristics such as minimum interface trap density as low as 1.9?×?10{sup 11?}cm{sup ?2?}eV{sup ?1} have been obtained by COO treatment. The impact of COO treatment against the band alignment of Al{sub 2}O{sub 3} with respect to Ge is studied by x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry (SE). Based on both XPS and SE studies, the origin of gate leakage in the ALD-Al{sub 2}O{sub 3} is attributed to the sub-gap states, which may be correlated to the OH-related groups in Al{sub 2}O{sub 3} network. It is demonstrated that the COO method is effective in repairing the OH-related defects in high-k dielectrics as well as forming superior high-k/Ge interface for high performance Ge MOS devices.

  7. Improving Corrosion Behavior in SCWR, LFR and VHTR Reactor Materials by Formation of a Stable Oxide

    SciTech Connect (OSTI)

    Arthur T. Motta; Robert Comstock; Ning Li; Todd Allen; Gary Was

    2009-12-21

    The objective of this study is to understand the influence of the alloy microstructure and composition on the formation of a stable, protective oxide in the environments relevant to the SCWR and LFR reactor concepts, as well as to the VHTR. It is proposed to use state-of-the art techniques to study the fine structure of these oxides to identify the structural differences between stable and unstable oxide layers. The techniques to be used are microbeam synchrotron radiation diffraction and fluorescence, and cross-sectional transmission electron microcopy on samples prepared using focused ion beam.

  8. A generalized kinetic model for the formation and growth of single-walled metal oxide nanotubes

    E-Print Network [OSTI]

    Nair, Sankar

    A generalized kinetic model for the formation and growth of single-walled metal oxide nanotubes G,n a School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA b School of Chemical & Biomolecular Engineering, Georgia Institute of Technology, Atlanta, GA 30332, USA c

  9. The role of aqueous-phase oxidation in the formation of highly-oxidized organic aerosol

    E-Print Network [OSTI]

    Daumit, Kelly Elizabeth

    2015-01-01

    Atmospheric particulate matter (or "aerosol") is known to have important implications for climate change, air quality, and human health. Our ability to predict its formation and fate is hindered by uncertainties associated ...

  10. Note: A method for minimizing oxide formation during elevated temperature nanoindentation

    SciTech Connect (OSTI)

    Cheng, I. C.; Hodge, A. M., E-mail: ahodge@usc.edu [Department of Aerospace and Mechanical Engineering, University of Southern California, 3650 McClintock Avenue OHE430, Los Angeles, California 90089 (United States); Garcia-Sanchez, E. [Department of Aerospace and Mechanical Engineering, University of Southern California, 3650 McClintock Avenue OHE430, Los Angeles, California 90089 (United States); Facultad de Ingeniería Mecánica y Eléctrica, Universidad Autónoma de Nuevo León, Av. Universidad S/N, San Nicolás de los Garza, NL 66450 (Mexico)

    2014-09-15

    A standardized method to protect metallic samples and minimize oxide formation during elevated-temperature nanoindentation was adapted to a commercial instrument. Nanoindentation was performed on Al (100), Cu (100), and W (100) single crystals submerged in vacuum oil at 200 °C, while the surface morphology and oxidation was carefully monitored using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The results were compared to room temperature and 200 °C nanoindentation tests performed without oil, in order to evaluate the feasibility of using the oil as a protective medium. Extensive surface characterization demonstrated that this methodology is effective for nanoscale testing.

  11. Mechanism for the formation of tin oxide nanoparticles and nanowires inside the mesopores of SBA-15

    SciTech Connect (OSTI)

    Satishkumar, G.; Titelman, L. [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel); Landau, M.V., E-mail: mlandau@bgu.ac.i [Blechner Center for Industrial Catalysis and Process Development, Department of Chemical Engineering, Ben-Gurion University of the Negev, Beer-Sheva 84105 (Israel)

    2009-10-15

    The formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. HR-TEM and XRD revealed that during the thermal treatment in air 5 nm tin oxide NP with well defined Cassiterite structure were formed inside the SBA-15 matrix mesopores at 250 deg. C. After air calcination at 700 deg. C the NP assembled inside the SBA-15 mesopores as polycrystalline nanorods with different orientation of atomic layers in jointed nanocrystals. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP at low temperature. The pure tin chloride heated in air at 250 deg. C did not react with oxygen to yield tin oxide. Tin oxide NP were also formed during the thermal treatment of the tin chloride loaded SBA-15 in helium atmosphere at 250 deg. C. Hence, it is well evident that silanols present in the silica matrix not only increase the wetting of tin chloride over the surface of SBA-15 favoring its penetration to the matrix pores, but also react with hydrated tin chloride according to the proposed scheme to give tin oxide inside the mesopores. It was confirmed by XRD, N{sub 2}-adsorption, TGA-DSC and FTIR spectra. This phenomenon was further corroborated by detecting the inhibition of SnO{sub 2} NP formation at 250 deg. C after inserting the tin precursor to SBA-15 with reduced silanols concentration partially grafted with tin chloride. - Graphical abstract: The mechanism of formation of polycrystalline tin oxide nanoparticles (NP) and nanowires was investigated using nanocasting approach included solid-liquid strategy for insertion of SnCl{sub 2} precursor and SBA-15 silica as a hard template. It was found that the structure silanols of silica matrix play a vital role in creating the tin oxide NP during thermal treatment.

  12. Effect of silver incorporation in phase formation and band gap tuning of tungsten oxide thin films

    SciTech Connect (OSTI)

    Jolly Bose, R.; Kumar, R. Vinod; Sudheer, S. K.; Mahadevan Pillai, V. P. [Department of Optoelectronics, University of Kerala, Kariyavattom, Thiruvananthapuram, Kerala 695581 (India); Reddy, V. R.; Ganesan, V. [UGC - DAE Consortium for Scientific Research, Khandwa Road, Indore 452017, Madhyapradesh (India)

    2012-12-01

    Silver incorporated tungsten oxide thin films are prepared by RF magnetron sputtering technique. The effect of silver incorporation in micro structure evolution, phase enhancement, band gap tuning and other optical properties are investigated using techniques such as x-ray diffraction, micro-Raman spectroscopy, atomic force microscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy, and UV-Visible spectroscopy. Effect of silver addition in phase formation and band gap tuning of tungsten oxide thin films are investigated. It is found that the texturing and phase formation improves with enhancement in silver content. It is also found that as the silver incorporation enhances the thickness of the films increases at the same time the strain in the film decreases. Even without annealing the desired phase can be achieved by doping with silver. A broad band centered at the wavelength 437 nm is observed in the absorption spectra of tungsten oxide films of higher silver incorporation and this can be attributed to surface plasmon resonance of silver atoms present in the tungsten oxide matrix. The transmittance of the films is decreased with increase in silver content which can be due to increase in film thickness, enhancement of scattering, and absorption of light caused by the increase of grain size, surface roughness and porosity of films and enhanced absorption due to surface plasmon resonance of silver. It is found that silver can act as the seed for the growth of tungsten oxide grains and found that the grain size increases with silver content which in turn decreases the band gap of tungsten oxide from 3.14 eV to 2.70 eV.

  13. Gate Access

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfateSciTechtail.Theory ofDid you not find whatGasEnergyfeatureCleanperformanceCareersGate Access Gate

  14. Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

    SciTech Connect (OSTI)

    Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars

    2013-12-04

    We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

  15. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    SciTech Connect (OSTI)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chang, Ting-Chang [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen [Device Department, United Microelectronics Corporation, Tainan Science Park, Tainan, Taiwan (China)

    2014-10-06

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO{sub 2} interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  16. On the phase formation of sputtered hafnium oxide and oxynitride films

    SciTech Connect (OSTI)

    Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

    2010-07-15

    Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O{sub 2}-N{sub 2} atmosphere. It is shown that the presence of N{sub 2} allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O{sub 2} partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O{sup -} ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O{sup -} ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O{sup -} ion flux without N{sub 2} addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO{sub 2} is independent from the O{sup -} bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO{sub 2} crystal structure at the expense of the monoclinic HfO{sub 2} one.

  17. Which Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir(V), Ir(VI), or Ir(VII)?

    E-Print Network [OSTI]

    Liao, Rongzhen

    the catalytic IrIII species. Water oxidation at IrVII has a slightly higher barrier, but it may also contributeWhich Oxidation State Leads to O-O Bond Formation in Cp*Ir(bpy)Cl-Catalyzed Water Oxidation, Ir: Density functional calculations are used to revisit the reaction mechanism of water oxidation catalyzed

  18. Limited effect of anthropogenic nitrogen oxides on secondary organic aerosol formation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zheng, Y.; Unger, N.; Hodzic, A.; Emmons, L.; Knote, C.; Tilmes, S.; Lamarque, J.-F.; Yu, P.

    2015-12-08

    Globally, secondary organic aerosol (SOA) is mostly formed from emissions of biogenic volatile organic compounds (VOCs) by vegetation, but it can be modified by human activities as demonstrated in recent research. Specifically, nitrogen oxides (NOx = NO + NO2) have been shown to play a critical role in the chemical formation of low volatility compounds. We have updated the SOA scheme in the global NCAR (National Center for Atmospheric Research) Community Atmospheric Model version 4 with chemistry (CAM4-chem) by implementing a 4-product volatility basis set (VBS) scheme, including NOx-dependent SOA yields and aging parameterizations. Small differences are found for themore »no-aging VBS and 2-product schemes; large increases in SOA production and the SOA-to-OA ratio are found for the aging scheme. The predicted organic aerosol amounts capture both the magnitude and distribution of US surface annual mean measurements from the Interagency Monitoring of Protected Visual Environments (IMPROVE) network by 50 %, and the simulated vertical profiles are within a factor of 2 compared to aerosol mass spectrometer (AMS) measurements from 13 aircraft-based field campaigns across different regions and seasons. We then perform sensitivity experiments to examine how the SOA loading responds to a 50 % reduction in anthropogenic nitric oxide (NO) emissions in different regions. We find limited SOA reductions of 0.9–5.6, 6.4–12.0 and 0.9–2.8 % for global, southeast US and Amazon NOx perturbations, respectively. The fact that SOA formation is almost unaffected by changes in NOx can be largely attributed to a limited shift in chemical regime, to buffering in chemical pathways (low- and high-NOx pathways, O3 versus NO3-initiated oxidation) and to offsetting tendencies in the biogenic versus anthropogenic SOA responses.« less

  19. Limited effect of anthropogenic nitrogen oxides on Secondary Organic Aerosol formation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Zheng, Y.; Unger, N.; Hodzic, A.; Emmons, L.; Knote, C.; Tilmes, S.; Lamarque, J.-F.; Yu, P.

    2015-08-28

    Globally, secondary organic aerosol (SOA) is mostly formed from emissions of biogenic volatile organic compounds (VOCs) by vegetation, but can be modified by human activities as demonstrated in recent research. Specifically, nitrogen oxides (NOx = NO + NO2) have been shown to play a critical role in the chemical formation of low volatility compounds. We have updated the SOA scheme in the global NCAR Community Atmospheric Model version 4 with chemistry (CAM4-chem) by implementing a 4-product Volatility Basis Set (VBS) scheme, including NOx-dependent SOA yields and aging parameterizations. The predicted organic aerosol amounts capture both the magnitude and distribution ofmore »US surface annual mean measurements from the Interagency Monitoring of Protected Visual Environments (IMPROVE) network by 50 %, and the simulated vertical profiles are within a factor of two compared to Aerosol Mass Spectrometer (AMS) measurements from 13 aircraft-based field campaigns across different region and seasons. We then perform sensitivity experiments to examine how the SOA loading responds to a 50 % reduction in anthropogenic nitric oxide (NO) emissions in different regions. We find limited SOA reductions of 0.9 to 5.6, 6.4 to 12.0 and 0.9 to 2.8 % for global, the southeast US and the Amazon NOx perturbations, respectively. The fact that SOA formation is almost unaffected by changes in NOx can be largely attributed to buffering in chemical pathways (low- and high-NOx pathways, O3 versus NO3-initiated oxidation) and to offsetting tendencies in the biogenic versus anthropogenic SOA responses.« less

  20. Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle Jia-Liang Le,1

    E-Print Network [OSTI]

    Bazant, Martin Z.

    for breakdown lifetime increases in proportion to the thickness of the oxide layer and suggests new ideas in the gate oxide layer induces the trap-assisted tunneling process, which leads to the gate leakage current

  1. Gating of Permanent Molds for ALuminum Casting

    SciTech Connect (OSTI)

    David Schwam; John F. Wallace; Tom Engle; Qingming Chang

    2004-03-30

    This report summarizes a two-year project, DE-FC07-01ID13983 that concerns the gating of aluminum castings in permanent molds. The main goal of the project is to improve the quality of aluminum castings produced in permanent molds. The approach taken was determine how the vertical type gating systems used for permanent mold castings can be designed to fill the mold cavity with a minimum of damage to the quality of the resulting casting. It is evident that somewhat different systems are preferred for different shapes and sizes of aluminum castings. The main problems caused by improper gating are entrained aluminum oxide films and entrapped gas. The project highlights the characteristic features of gating systems used in permanent mold aluminum foundries and recommends gating procedures designed to avoid common defects. The study also provides direct evidence on the filling pattern and heat flow behavior in permanent mold castings.

  2. Formation of Tetra(ethylene oxide) Terminated Si-C Linked Monolayers and Their Derivatization with Glycine

    E-Print Network [OSTI]

    Kilian, Kristopher A.

    for attachment of biomolecules but which can selectively form monolayers onto hydrogen terminated silicon have surface. Monolayer formation was carried out using solutions of the alkene in the high for the immobilization of amines on tetra(ethylene oxide) modified surfaces. Introduction The rapid advances

  3. IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 37, NO. 12, DECEMBER 2009 2303 Nitric Oxide Formation in a Premixed Flame With

    E-Print Network [OSTI]

    Lee, Tonghun

    IEEE TRANSACTIONS ON PLASMA SCIENCE, VOL. 37, NO. 12, DECEMBER 2009 2303 Nitric Oxide Formation in a Premixed Flame With High-Level Plasma Energy Coupling Xing Rao, Igor B. Matveev, and Tonghun Lee Abstract) in a transient-arc direct-current plasmatron igniter using premixed air/fuel mixtures. Quantitative measurements

  4. Electrical characterization of native-oxide InAlPGaAs metal-oxide-semiconductor heterostructures using

    E-Print Network [OSTI]

    Electrical characterization of native-oxide InAlPÕGaAs metal-oxide-semiconductor heterostructures 8 December 2003; accepted 20 January 2004 InAIP native oxide/GaAs metal-oxide-semiconductor MOS of Schottky gates can lead to excessive gate leakage current and also restrict the forward gate bias to only

  5. Electrocatalytic Oxidation of Formate with Nickel Diphosphane Dipeptide Complexes: Effect of Ligands Modified with Amino Acids

    SciTech Connect (OSTI)

    Galan, Brandon R.; Reback, Matthew L.; Jain, Avijita; Appel, Aaron M.; Shaw, Wendy J.

    2013-10-28

    A series of nickel bis-diphosphine complexes with dipeptides appended to the ligands were investigated for the catalytic oxidation of formate. Typical rates of ~7 s-1 were found, similar to the parent complex (~8 s-1), with amino acid size and positioning contributing very little to rate or operating potential. Hydroxyl functionalities did result in lower rates, which were recovered by protecting the hydroxyl group. The results suggest that the overall dielectric introduced by the dipeptides does not play an important role in catalysis, but free hydroxyl groups do influence activity suggesting contributions from intra- or intermolecular interactions. These observations are important in developing a fundamental understanding of the affect that an enzyme-like outer coordination sphere can have upon molecular catalysts. This work was funded by the US DOE Basic Energy Sciences, Chemical Sciences, Geoscience and Biosciences Division (BRG, AJ, AMA, WJS), the US DOE Basic Energy Sciences, Physical Bioscience program (MLR). Pacific Northwest National Laboratory is operated by Battelle for the U.S. Department of Energy.

  6. Structures and Properties of Zirconia-Supported Ruthenium Oxide Catalysts for the Selective Oxidation of Methanol to Methyl Formate

    E-Print Network [OSTI]

    Iglesia, Enrique

    Structures and Properties of Zirconia-Supported Ruthenium Oxide Catalysts for the Selective Species, College of Chemistry and Molecular Engineering, Green Chemistry Center, Peking UniVersity, Beijing 100871, China, and Department of Chemical Engineering, UniVersity of California at Berkeley

  7. Nonvolatile memory disturbs due to gate and junction leakage currents

    E-Print Network [OSTI]

    Schroder, Dieter K.

    leakage currents induced by stress due to LOCOS and trap- assisted tunneling (TAT). * Corresponding author Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State) from traps within the gate oxides. Such low gate leakage currents can lead to sufficient charge

  8. Formation of jarosite-bearing deposits through aqueous oxidation of pyrite at Meridiani Planum, Mars

    E-Print Network [OSTI]

    Rhoads, James

    in an aqueous environment. We evaluate conditions responsible for the formation of a jarosite-goethite created an acidic environment that allowed formation of sulfates and goethite. Partial neutralization of the solution caused further goethite precipitation and conversion of jarosite to goethite, leading to formation

  9. Electron-beam patterning of polymer electrolyte films to make multiple nanoscale gates for nanowire transistors

    E-Print Network [OSTI]

    D. J. Carrad; A. M. Burke; R. W. Lyttleton; H. J. Joyce; H. H. Tan; C. Jagadish; K. Storm; H. Linke; L. Samuelson; A. P. Micolich

    2014-04-08

    We report an electron-beam based method for the nanoscale patterning of the poly(ethylene oxide)/LiClO$_{4}$ polymer electrolyte. We use the patterned polymer electrolyte as a high capacitance gate dielectric in single nanowire transistors and obtain subthreshold swings comparable to conventional metal/oxide wrap-gated nanowire transistors. Patterning eliminates gate/contact overlap which reduces parasitic effects and enables multiple, independently controllable gates. The method's simplicity broadens the scope for using polymer electrolyte gating in studies of nanowires and other nanoscale devices.

  10. Range gated imaging experiments using gated intensifiers

    SciTech Connect (OSTI)

    McDonald, T.E. Jr.; Yates, G.J.; Cverna, F.H.; Gallegos, R.A.; Jaramillo, S.A.; Numkena, D.M.; Payton, J.; Pena-Abeyta, C.R.

    1999-03-01

    A variety of range gated imaging experiments using high-speed gated/shuttered proximity focused microchannel plate image intensifiers (MCPII) are reported. Range gated imaging experiments were conducted in water for detection of submerged mines in controlled turbidity tank test and in sea water for the Naval Coastal Sea Command/US Marine Corps. Field experiments have been conducted consisting of kilometer range imaging of resolution targets and military vehicles in atmosphere at Eglin Air Force Base for the US Air Force, and similar imaging experiments, but in smoke environment, at Redstone Arsenal for the US Army Aviation and Missile Command (AMCOM). Wavelength of the illuminating laser was 532 nm with pulse width ranging from 6 to 12 ns and comparable gate widths. These tests have shown depth resolution in the tens of centimeters range from time phasing reflected LADAR images with MCPII shutter opening.

  11. Gate dielectric development for flexible electronics

    SciTech Connect (OSTI)

    Joshi, P. C.; Voutsas, A. T.; Hartzell, J. W. [LCD Process Technology Laboratories, SHARP Laboratories of America, Inc., 5700 NW Pacific Rim Blvd., Camas, Washington 98607 (United States)

    2007-07-15

    Thin film transistors integrated on flexible substrates are becoming increasingly attractive for low cost displays, sensors, and rf communication applications. The successful development of the flexible devices will be dictated by the enhancement in the thermal stability of the substrates and the low temperature (<300 deg. C) processing of the gate dielectric. The plasma-enhanced chemical-vapor deposition (PECVD) technique has successfully met the demands of the gate dielectric for display devices at processing temperatures lower than 600 deg. C. However, a further reduction in the processing temperatures below 300 deg. C is essential to realize low cost, highly functional devices on flexible substrates. The low temperature processing of gate dielectric films necessitates the development of processes and techniques with plasma controlled reaction kinetics dominating the thin film growth rather than the thermal state of the substrate. In the present work, the authors report on the processing of high quality gate dielectric films by high density PECVD technique at process temperatures lower than 300 deg. C. The bulk and interfacial electrical quality and reliability of the metal-oxide-semiconductor capacitors as a function of process temperature are discussed in this article. A comparison with the high temperature gate oxide films deposited by PECVD technique employing capacitively coupled plasma source has been made to establish the film quality and reliability. The films processed at low temperatures have shown good electrical performance and reliability as evaluated in terms of the leakage current, flatband voltage, midgap interface trap concentration, and bias temperature stress reliability characteristics.

  12. UThPbREE systematics of organic-rich shales from the ca. 2.15 Ga Sengoma Argillite Formation, Botswana: Evidence for oxidative continental weathering during

    E-Print Network [OSTI]

    Bekker, Andrey

    U­Th­Pb­REE systematics of organic-rich shales from the ca. 2.15 Ga Sengoma Argillite Formation contains organic-rich shales deposited during the Great Oxidation Event. The slope of the 207 Pb/204 Pb­206 Pb/204 Pb array of shales from the Sengoma Argillite Formation corresponds to a Pb­Pb age

  13. Demonstrating 1 nm-oxide-equivalent-thickness HfO{sub 2}/InSb structure with unpinning Fermi level and low gate leakage current density

    SciTech Connect (OSTI)

    Trinh, Hai-Dang [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Lin, Yueh-Chin; Nguyen, Hong-Quan; Luc, Quang-Ho [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Nguyen, Minh-Thuy; Duong, Quoc-Van; Nguyen, Manh-Nghia [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam)] [Department of Physics, Hanoi National University of Education, 136 Xuan Thuy, Cau Giay, Hanoi (Viet Nam); Wang, Shin-Yuan [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)] [Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China); Yi Chang, Edward [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China) [Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, Hsinchu, Taiwan (China); Department of Electronic Engineering, National Chiao Tung University 1001, University Rd., Hsinchu 300, Taiwan (China)

    2013-09-30

    In this work, the band alignment, interface, and electrical characteristics of HfO{sub 2}/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO{sub 2} layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO{sub 2}/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10{sup ?4} A/cm{sup ?2}. The D{sub it} value of smaller than 10{sup 12} eV{sup ?1}cm{sup ?2} has been obtained using conduction method.

  14. PROOF COPY 501138JCP Polarization interactions and boroxol ring formation in boron oxide

    E-Print Network [OSTI]

    Stillinger, Frank

    Institute of Physics. DOI: 10.1063/1.1401817 I. INTRODUCTION Boron oxide chemical formula B2O3 is a network- served by inelastic neutron scattering,1,2 nuclear magnetic resonance,3­6 nuclear quadrupole resonance,7 to not reveal such structures.25­33 A reverse Monte Carlo study34 has shown that a high percentage of boroxol

  15. Polarization Interactions and Boroxol Ring Formation in Boron Oxide: A Molecular Dynamics Study

    E-Print Network [OSTI]

    Stillinger, Frank

    is favored. I. Introduction Boron oxide [chemical formula B 2 O 3 ] is a network glass­former. The short scattering (1,2), nuclear magnetic resonance (3­6), nuclear quadrupole resonance (7­9), Raman scattering (10 such structures (25­33). A reverse Monte Carlo study (34) has shown that a high percentage of boroxol rings cannot

  16. Superparamagnetic iron oxide nanoparticles as radiosensitizer via enhanced reactive oxygen species formation

    SciTech Connect (OSTI)

    Klein, Stefanie; Sommer, Anja [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany)] [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany); Distel, Luitpold V.R. [Department of Radiation Oncology, Friedrich Alexander University Erlangen-Nuremberg, Universitaetsstrasse 27, D-91054 Erlangen (Germany)] [Department of Radiation Oncology, Friedrich Alexander University Erlangen-Nuremberg, Universitaetsstrasse 27, D-91054 Erlangen (Germany); Neuhuber, Winfried [Department of Anatomy, Chair of Anatomy I, Friedrich Alexander University Erlangen-Nuremberg, Krankenhausstr. 9, D-91054 Erlangen (Germany)] [Department of Anatomy, Chair of Anatomy I, Friedrich Alexander University Erlangen-Nuremberg, Krankenhausstr. 9, D-91054 Erlangen (Germany); Kryschi, Carola, E-mail: kryschi@chemie.uni-erlangen.de [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany)] [Department of Chemistry and Pharmacy, Physical Chemistry I and ICMM, Friedrich-Alexander University of Erlangen-Nuremberg, Egerlandstr. 3, D-91058 Erlangen (Germany)

    2012-08-24

    Highlights: Black-Right-Pointing-Pointer Ultrasmall citrate-coated SPIONs with {gamma}Fe{sub 2}O{sub 3} and Fe{sub 3}O{sub 4} structure were prepared. Black-Right-Pointing-Pointer SPIONs uptaken by MCF-7 cells increase the ROS production for about 240%. Black-Right-Pointing-Pointer The SPION induced ROS production is due to released iron ions and catalytically active surfaces. Black-Right-Pointing-Pointer Released iron ions and SPION surfaces initiate the Fenton and Haber-Weiss reaction. Black-Right-Pointing-Pointer X-ray irradiation of internalized SPIONs leads to an increase of catalytically active surfaces. -- Abstract: Internalization of citrate-coated and uncoated superparamagnetic iron oxide nanoparticles by human breast cancer (MCF-7) cells was verified by transmission electron microscopy imaging. Cytotoxicity studies employing metabolic and trypan blue assays manifested their excellent biocompatibility. The production of reactive oxygen species in iron oxide nanoparticle loaded MCF-7 cells was explained to originate from both, the release of iron ions and their catalytically active surfaces. Both initiate the Fenton and Haber-Weiss reaction. Additional oxidative stress caused by X-ray irradiation of MCF-7 cells was attributed to the increase of catalytically active iron oxide nanoparticle surfaces.

  17. Emission, oxidation, and secondary organic aerosol formation of volatile organic compounds as observed at Chebogue Point,

    E-Print Network [OSTI]

    Goldstein, Allen

    acid, formaldehyde, acetaldehyde, tentatively identified formic acid and hydroxyacetone organic aerosol production. We clearly show these compounds do not originate from local sources. We also show these compounds match the oxidation products of isoprene observed in smog chamber studies, and we

  18. Promotional Effects of Bismuth on the Formation of Platinum-Bismuth Nanowires Network and the Electrocatalytic Activity toward Ethanol Oxidation

    SciTech Connect (OSTI)

    X Teng; W Du; D Su; Q Wang; A Frenkel

    2011-12-31

    Electrocatalytic activities of Pt and their alloys toward small organic molecules oxidation are highly dependent on their morphology, chemical composition, and electronic structure. Here, we report the synthesis of dendrite-like Pt{sub 95}Bi{sub 5}, Pt{sub 83}Bi{sub 17}, and Pt{sub 76}Bi{sub 24} nanowires network with a high aspect ratio (up to 68). The electronic structure and heterogeneous crystalline structure have been studied using combined techniques, including aberration-corrected scanning transmission electron microscopy (STEM) and X-ray absorption near-edge structure (XANES) spectroscopy. Bismuth-oriented attachment growth mechanism has been proposed for the anisotropic growth of Pt/Bi. The electrochemical activities of Pt/Bi nanowires network toward ethanol oxidations have been tested. In particular, the as-made Pt{sub 95}Bi{sub 5} appears to have superior activity toward ethanol oxidation in comparison with the commercial Pt/C catalyst. The reported promotional effect of Bi on the formation of Pt/Bi and electrochemical activities will be important to design effective catalysts for ethanol fuel cell application.

  19. Bielectron vortices in gated graphene

    E-Print Network [OSTI]

    C. A. Downing; M. E. Portnoi

    2015-06-14

    We study the formation of bound two-particle states in gapless monolayer graphene in gated structures. We find that, even in the regime of massless Dirac fermions, coupling can occur at zero-energy for different or same charge quasiparticles. These bipartite states must have a non-zero internal angular momentum, meaning that they only exist as stationary vortices. We propose a new picture of the experimentally seen Fermi velocity renormalization as a manifestation of these pairs, suggest the possibility of a condensate of these novel quasiparticles.

  20. Effect of dew point on the formation of surface oxides of twinning-induced plasticity steel

    SciTech Connect (OSTI)

    Kim, Yunkyum; Lee, Joonho; Shin, Kwang-Soo; Jeon, Sun-Ho; Chin, Kwang-Geun

    2014-03-01

    The surface oxides of twinning-induced plasticity (TWIP) steel annealed at 800 °C for 43 s were investigated using transmission electron microscopy. During the annealing process, the oxygen potential was controlled by adjusting the dew point in a 15%H{sub 2}–N{sub 2} gas atmosphere. It was found that the type of surface oxides formed and the thickness of the oxide layer were determined by the dew point. In a gas mixture with a dew point of ? 20 °C, a MnO layer with a thickness of ? 100 nm was formed uniformly on the steel surface. Under the MnO layer, a MnAl{sub 2}O{sub 4} layer with a thickness of ? 15 nm was formed with small Mn{sub 2}SiO{sub 4} particles that measured ? 70 nm in diameter. Approximately 500 nm below the MnAl{sub 2}O{sub 4} layer, Al{sub 2}O{sub 3} was formed at the grain boundaries. On the other hand, in a gas mixture with a dew point of ? 40 °C, a MnAl{sub 2}O{sub 4} layer with a thickness of ? 5 nm was formed on most parts of the surface. On some parts of the surface, Mn{sub 2}SiO{sub 4} particles were formed irregularly up to a thickness of ? 50 nm. Approximately 200 nm below the MnAl{sub 2}O{sub 4} layer, Al{sub 2}O{sub 3} was found at the grain boundaries. Thermodynamic calculations were performed to explain the experimental results. The calculations showed that when a{sub O2} > ? 1.26 × 10{sup ?28}, MnO, MnAl{sub 2}O{sub 4}, and Mn{sub 2}SiO{sub 4} can be formed together, and the major oxide is MnO. When a{sub O2} is in the range of 1.26 × 10{sup ?28}–2.51 × 10{sup ?31}, MnO is not stable but MnAl{sub 2}O{sub 4} is the major oxide. When a{sub O2} < ? 2.51 × 10{sup ?31}, only Al{sub 2}O{sub 3} is stable. Consequently, the effective activity of oxygen is considered the dominant factor in determining the type and shape of surface oxides of TWIP steel. - Highlights: • The surface oxides of TWIP steel annealed at 800 °C were investigated using TEM. • The surface oxides were determined by the dew point during the annealing process. • The activity of oxygen is the major factor determining the oxides of TWIP steel.

  1. Methyl Formate Oxidation: Speciation Data, Laminar Burning Velocities, Ignition Delay Times and a Validated Chemical Kinetic Model

    SciTech Connect (OSTI)

    Dooley, S.; Burke, M. P.; Chaos, M.; Stein, Y.; Dryer, F. L.; Zhukov, V. P.; Finch, O.; Simmie, J. M.; Curran, H. J.

    2010-07-16

    The oxidation of methyl formate (CH{sub 3}OCHO) has been studied in three experimental environments over a range of applied combustion relevant conditions: 1. A variable-pressure flow reactor has been used to quantify reactant, major intermediate and product species as a function of residence time at 3 atm and 0.5% fuel concentration for oxygen/fuel stoichiometries of 0.5, 1.0, and 1.5 at 900 K, and for pyrolysis at 975 K. 2. Shock tube ignition delays have been determined for CH{sub 3}OCHO/O{sub 2}/Ar mixtures at pressures of ? 2.7, 5.4, and 9.2 atm and temperatures of 1275–1935 K for mixture compositions of 0.5% fuel (at equivalence ratios of 1.0, 2.0, and 0.5) and 2.5% fuel (at an equivalence ratio of 1.0). 3. Laminar burning velocities of outwardly propagating spherical CH{sub 3}OCHO/air flames have been determined for stoichiometries ranging from 0.8–1.6, at atmospheric pressure using a pressure-release-type high-pressure chamber. A detailed chemical kinetic model has been constructed, validated against, and used to interpret these experimental data. The kinetic model shows that methyl formate oxidation proceeds through concerted elimination reactions, principally forming methanol and carbon monoxide as well as through bimolecular hydrogen abstraction reactions. The relative importance of elimination versus abstraction was found to depend on the particular environment. In general, methyl formate is consumed exclusively through molecular decomposition in shock tube environments, while at flow reactor and freely propagating premixed flame conditions, there is significant competition between hydrogen abstraction and concerted elimination channels. It is suspected that in diffusion flame configurations the elimination channels contribute more significantly than in premixed environments.

  2. Microdomain Formation, Oxidation, and Cation Ordering in LaCa2Fe3O8+y

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Price, Patrick M.; Browning, Nigel D.; Butt, Darryl P.

    2015-03-23

    The compound LaCa2Fe3O8+y, also known as the Grenier phase, is known to undergo an order-disorder transformation (ODT) at high temperatures. Oxidation has been observed when the compound is cooled in air after the ODT. In this study, we have synthesized the Grenier compound in air using traditional solid state reactions and investigated the structure and composition before and after the ODT. Thermal analysis showed that the material undergoes an order-disorder transformation in both oxygen and argon atmospheres with dynamic, temperature dependent, oxidation upon cooling. Results from scanning transmission electron microscopy (STEM) suggest that the Grenier phase has preferential segregation ofmore »Ca and La on the two crystallographic A-sites before the ODT, but a random distribution above the ODT temperature. Furthermore, STEM images suggest the possibility that oxygen excess may exist in La-rich regions within microdomains rather than at microdomain boundaries.« less

  3. Low temperature formation of electrode having electrically conductive metal oxide surface

    DOE Patents [OSTI]

    Anders, Simone (Albany, CA); Anders, Andre (Albany, CA); Brown, Ian G. (Berkeley, CA); McLarnon, Frank R. (Orinda, CA); Kong, Fanping (Berkeley, CA)

    1998-01-01

    A low temperature process is disclosed for forming metal suboxides on substrates by cathodic arc deposition by either controlling the pressure of the oxygen present in the deposition chamber, or by controlling the density of the metal flux, or by a combination of such adjustments, to thereby control the ratio of oxide to metal in the deposited metal suboxide coating. The density of the metal flux may, in turn, be adjusted by controlling the discharge current of the arc, by adjusting the pulse length (duration of on cycle) of the arc, and by adjusting the frequency of the arc, or any combination of these parameters. In a preferred embodiment, a low temperature process is disclosed for forming an electrically conductive metal suboxide, such as, for example, an electrically conductive suboxide of titanium, on an electrode surface, such as the surface of a nickel oxide electrode, by such cathodic arc deposition and control of the deposition parameters. In the preferred embodiment, the process results in a titanium suboxide-coated nickel oxide electrode exhibiting reduced parasitic evolution of oxygen during charging of a cell made using such an electrode as the positive electrode, as well as exhibiting high oxygen overpotential, resulting in suppression of oxygen evolution at the electrode at full charge of the cell.

  4. Models of the formation of oxide phases in nanostructured materials based on lead chalcogenides subjected to treatment in oxygen and iodine vapors

    SciTech Connect (OSTI)

    Maraeva, E. V., E-mail: jenvmar@mail.ru; Moshnikov, V. A.; Tairov, Yu. M. [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)] [St. Petersburg State Electrotechnical University 'LETI' (Russian Federation)

    2013-10-15

    Model concepts concerning control over the formation of oxide layers during the course of oxidation are developed on the basis of experimental results of studies of systematic features of the formation of nanostructured layers after diffusion annealing. Data on a variation in the composition of oxide phases as the extent of deviation from stoichiometry is changed in the initial lead chalcogenide are presented. Model concepts related to the possibility of varying the thickness of the coating oxide phases using annealing in an oxygen-containing medium are developed. It is shown that annealing in an iodine atmosphere ensures the effective penetration of oxygen into the grains, which is necessary for an increase in the photoluminescence efficiency.

  5. Charge Trapping Characteristics of SONOS Capacitors with Control Gates of Different Work Functions during Program/Erase Operations

    E-Print Network [OSTI]

    Lee, Jong Duk

    (3.2 eV), which gives higher probability of the electron tunneling from control gate to the silicon traps as its program mechanism. When a positive bias stress is applied on the control gate, electrons gate and top oxide tunnel into the silicon nitride layer and recombine with holes which are trapped

  6. Optical XOR gate

    DOE Patents [OSTI]

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  7. Mixture Preparation and Nitric Oxide Formation in a GDI Engine studied by Combined Laser Diagnostics and Numerical Modeling

    SciTech Connect (OSTI)

    Volker Sick; Dennis N. Assanis

    2002-11-27

    Through the combination of advanced imaging laser diagnostics with multi-dimensional computer models, a new understanding of the performance of direct-injection gasoline engines is pursuit. The work focuses on the fuel injection process, the breakup of the liquid into a fine spray and the mixing of the fuel with the in-cylinder gases. Non-intrusive laser diagnostics will be used to measure the spatial distribution of droplets and vaporized fuel with very high temporal resolution. These data along with temperature measurements will be used to validate a new spray breakup model for gasoline direct-injection. Experimental data on near wall fuel distributions will be used for comparison with a model that predicts the spray-wall interaction and the dynamics of the liquid film on the surface. Quantitative measurements of local nitric oxide concentrations inside the combustion chamber will provide a critical test for a numerical simulation of the nitric oxide formation process. This model is based on a modified flamelet approach and will be used to study the effects of exhaust gas recirculation.

  8. Fundamental Studies of Irradiation-Induced Defect Formation and Fission Product Dynamics in Oxide Fuels

    SciTech Connect (OSTI)

    James Stubbins

    2012-12-19

    The objective of this research program is to address major nuclear fuels performance issues for the design and use of oxide-type fuels in the current and advanced nuclear reactor applications. Fuel performance is a major issue for extending fuel burn-up which has the added advantage of reducing the used fuel waste stream. It will also be a significant issue with respect to developing advanced fuel cycle processes where it may be possible to incorporate minor actinides in various fuel forms so that they can be 'burned' rather than join the used fuel waste stream. The potential to fission or transmute minor actinides and certain long-lived fission product isotopes would transform the high level waste storage strategy by removing the need to consider fuel storage on the millennium time scale.

  9. Oxidation of Helix-3 Methionines Precedes the Formation of PK Resistant PrPSc

    E-Print Network [OSTI]

    Canello, Tamar; Frid, Kati; Gabizon, Ronen; Lisa, Silvia; Friedler, Assaf; Moskovitz, Jackob; Gasset, Marí a; Gabizon, Ruth

    2010-07-01

    Precedes the Formation of PK Resistant PrPSc. PLoS Pathog 6(7): e1000977. doi:10.1371/journal.ppat.1000977 Editor: Umberto Agrimi, Istituto Superiore di Sanita`, Italy Received January 21, 2010; Accepted May 28, 2010; Published July 1, 2010 Copyright... that the polarity increase of Met 206 and 213 residues upon sulfoxidation may induce destabilization of the PrP PLoS Pathogens | www.plospathogens.org 1 July 2010 | Volume 6 | Issue 7 | e1000977 helical conformation [15]. This prediction agrees...

  10. Representative Control Gates

    E-Print Network [OSTI]

    Rhoads, James

    Representative Staffing & Management Reviews & Control Gates The NASA Program/Project Life Cycle Concept C Concept/Design Evaluation Criteria ° Feasibility Assessment ° Life Cycle Cost Estimates ° Trade Requirements Establish Optimum System Design Analyze Mission Requirements Establish Optimum Architecture

  11. Contributions Of Stress And Oxidation On The Formation Of Whiskers In Pb-Free Solders

    SciTech Connect (OSTI)

    Duncan, A. J.; Hoffman, E. N.

    2014-03-25

    This report summarizes the research activities of WP-1754. The study focusses on the environmental factors influencing formation of lead free whiskers on electrodeposited tin coatings over copper (or copper containing) substrates. Much of the initial results are summarized in an interim report. From the initial results, two main areas were chosen to be the focus of additional research: the demonstration of effects of elastic stress state in the nucleation of whiskers and the confirmation of the effect of oxygen/nitrogen ratio in the formation of whiskers. Different levels of elastic stress were induced with the incorporation of a custom designed fixture that loaded the substrates in a four-point bending configuration and were maintained in an environmental chamber under conditions deemed favorable for whisker growth. The results show that induced elastic stress slightly increased the concentration of nucleation sites of whiskers. The effects of oxygen content were studied by aging substrates in gas vials of varying absolute pressure and different oxygen/nitrogen ratios. The concentration of whiskers were measured and appear to be sensitive to absolute pressure but are not sensitive to oxygen content (as previously observed).

  12. Advanced insulated gate bipolar transistor gate drive

    DOE Patents [OSTI]

    Short, James Evans (Monongahela, PA); West, Shawn Michael (West Mifflin, PA); Fabean, Robert J. (Donora, PA)

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  13. Cleaning and passivation of copper surfaces to remove surface radioactivity and prevent oxide formation

    SciTech Connect (OSTI)

    Hoppe, Eric W.; Seifert, Allen; Aalseth, Craig E.; Bachelor, Paula P.; Day, Anthony R.; Edwards, Danny J.; Hossbach, Todd W.; Litke, Kevin E.; McIntyre, Justin I.; Miley, Harry S.; Schulte, Shannon M.; Smart, John E.; Warren, Glen A.

    2007-08-21

    High-purity copper is an attractive material for constructing ultra-low-background radiation measurement devices. Many low-background experiments using high-purity copper have indicated surface contamination emerges as the dominant background. Radon daughters plate out on exposed surfaces, leaving a residual 210Pb background that is difficult to avoid. Dust is also a problem; even under cleanroom conditions, the amount of U and Th deposited on surfaces can represent the largest remaining background. To control these backgrounds, a copper cleaning chemistry has been developed. Designed to replace an effective, but overly aggressive concentrated nitric acid etch, this peroxide-based solution allows for a more controlled cleaning of surfaces. The acidified hydrogen peroxide solution will generally target the Cu+/Cu2+ species which are the predominant surface participants, leaving the bulk of copper metal intact. This preserves the critical tolerances of parts and eliminates significant waste disposal issues. Accompanying passivation chemistry has also been developed that protects copper surfaces from oxidation. Using a high-activity polonium surface spike, the most difficult-to-remove daughter isotope of radon, the performance of these methods are quantified. © 2001 Elsevier Science. All rights reserved

  14. IEEE TRANSACTIONS ON NANOTECHNOLOGY, VOL. 4, NO. 5, SEPTEMBER 2005 599 Quantum Interference in Fully Depleted Tri-Gate

    E-Print Network [OSTI]

    Gilbert, Matthew

    and drain dimen- sions. A uniform 1-nm oxide layer covers the top and sides of the device to isolate the gates from the semiconductor. Under the device is a 100-nm-thick oxide layer. This device is studied

  15. Effect of hydrothermal condition on the formation of multi-component oxides of Ni-based metallic glass under high temperature water near the critical point

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, J. S.; Kim, S. Y.; Kim, D. H.; Ott, R. T.; Kim, H. G.; Lee, M. H.

    2015-07-01

    The specific feature of multi-component oxides synthesized by hydrothermal process under high temperature (633 K) and highly pressurized water (18.9 MPa) near critical point. Effects of hydrothermal processing duration times 24 hours and 72 hours, respectively, on the oxide formation of the Ni59Zr20Ti16Si2Sn3 metallic glass synthesized by powder metallurgy process were characterized by X-ray diffractometer, differential scanning calorimeter along with the particle size, morphology and crystalline phase of the oxides. The crystallization of the needle-shape NiTiO3, ZrTiO4 and ZrSnO4 ternary oxide phases observed on the surface of metallic glass at below glass transition temperature and the morphology of oxide phasesmore »changed to plate-shape around 2 ?m in diameter by the increase processing time. This hydrothermal processing in subcritical water provides accelerated dense metal oxide crystals due to the reaction medium being at higher pressure than conventional oxidation processing.« less

  16. Compact modeling of Double-Gate MOSFETs

    E-Print Network [OSTI]

    Lu, Huaxin

    2006-01-01

    Architecture with High-k Gate Dielectrics, Metal Gates and Strain Engineering," in Symposium on VLSI Technology

  17. Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor

    E-Print Network [OSTI]

    Tobin, Roger G.

    Sulfur surface chemistry on the platinum gate of a silicon carbide based hydrogen sensor Yung Ho September 2007 We have investigated the effects of sulfur contamination on a Pt-gate silicon carbide based monitoring, solid-oxide fuel cells, and coal gasification, require operation at much higher temperatures than

  18. High-Aspect Ratio Deep Sub-Micron -Si Gate Etch Process Control

    E-Print Network [OSTI]

    Grizzle, Jessy W.

    .-M. Park Mask U of M Industry Industry Goal · High throughput · Good morphology · Minimum gate oxide damage1 High-Aspect Ratio Deep Sub-Micron -Si Gate Etch Process Control H.-M. Park, T. L. Brock, D · Blank sample ·Patterned sample · Conclusion H.-M. Park #12;3 Etching Process of Deep Sub

  19. Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature and by-products formation

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Diesel Oxidation Catalyst Combined to Non-Thermal Plasma: Effect on Activation Catalyst Temperature efficiency together with the catalyst activation temperature when a Diesel Oxidation Catalyst (DOC) is placed downstream to a multi-plans Dielectric Barrier Discharge (DBD) reactor. In order to simulate Diesel engine

  20. Gate complexity using Dynamic Programming

    E-Print Network [OSTI]

    Srinivas Sridharan; Mile Gu; Matthew R. James

    2008-07-03

    The relationship between efficient quantum gate synthesis and control theory has been a topic of interest in the quantum control literature. Motivated by this work, we describe in the present article how the dynamic programming technique from optimal control may be used for the optimal synthesis of quantum circuits. We demonstrate simulation results on an example system on SU(2), to obtain plots related to the gate complexity and sample paths for different logic gates.

  1. Critical issues in the formation of quantum computer test structures by ion implantation

    E-Print Network [OSTI]

    Schenkel, T.

    2009-01-01

    with a 10 or 20 nm thick oxide layer from a standard drycharged Sb ions in the oxide layer. Charge state enhancedsuch as thin gate oxide layers. For sensitive quantum

  2. David Gates home page

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantityBonneville Power Administration would like submit theCovalent Bonding Low-Cost2 DOE HQSiteoC. DoranDatabaseDepartment ofGates

  3. Penn State DOE GATE Program

    SciTech Connect (OSTI)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  4. Radiation-Induced Formation of Chlorine Oxides and Their Potential Role in the Origin of Martian Perchlorates

    E-Print Network [OSTI]

    Kaiser, Ralf I.

    of Chemistry, University of Hawaii at Manoa, Honolulu, Hawaii 96822, United States Department of Chemistry of perchlorates as found on Mars. Air-borne chlorine oxides (ClxOy) remain atmospheric and environmental concerns classified as an emerging pollutant, which is widely present in the environments such in aerosols

  5. Novel Nanocrystal Floating Gate Memory

    E-Print Network [OSTI]

    Zhou, Huimei

    2012-01-01

    nanocrystals and tunnel oxide layer with a novel structure.of subsequent control oxide layer. Metal-oxide-semiconductorthe transistor has two oxide layers separated by Si. Top one

  6. 224 IEEE ELECTRON DEVICE LETTERS, VOL. 23, NO. 4, APRIL 2002 Gate Length Dependent Polysilicon Depletion Effects

    E-Print Network [OSTI]

    Dutton, Robert W.

    - tribution effect, MOSFET, polydepletion, polysilicon depletion ef- fect. I. INTRODUCTION IN THE dual n -p impurity penetration through the gate oxide, while maintaining the required source/drain junction depths [2

  7. THE ROLE OF SOOT PARTICLES AND NOx IN THE OXIDATION OF SO2 IN AQUEOUS SOLUTION: KINETICS, MECHANISM, AND IMPACT ON SULFATE AEROSOL FORMATION

    E-Print Network [OSTI]

    Chang, S.G.

    2013-01-01

    kinetic data for the catalytic oxidation of S02 by variousdata indicate that catalytic oxidation of S02 on carbon

  8. SF Gate Home Today's News

    E-Print Network [OSTI]

    Savrasov, Sergej Y.

    SF Gate Home Today's News Sports Entertainment Technology Live Views Traffic Weather Health Clues to Behavior of Plutonium / Research may help safety of storing ... 9/5/2003file://E:\\Homepages\\SavrasovHome

  9. Control of Emergent Properties at a Correlated Oxide Interface with You Zhou,*,

    E-Print Network [OSTI]

    transitions.1-3 Electrolyte gating utilizes the electric- double layer (EDL) that forms at the liquid-solid 02138, United States *S Supporting Information ABSTRACT: Electrolyte gating of complex oxides enables of electrolyte gated VO2 devices can be deterministically controlled by inserting a monolayer of graphene

  10. Calmodulin Methionine Residues are Targets For One-Electron Oxidation by Hydroxyl Radicals: Formation of S therefore N three-electron bonded Radical Complexes

    SciTech Connect (OSTI)

    Nauser, Thomas; Jacoby, Michael E.; Koppenol, Willem H.; Squier, Thomas C.; Schoneich, Christian

    2005-02-01

    The one-electron (1e) oxidation of organic sulfides and methionine (Met) constitutes an important reaction mechanism in vivo.1,2 Evidence for a Cu(II)-catalyzed oxidation of Met35 in the Alzheimer's disease -amyloid peptide was obtained,3 and, based on theoretical studies, Met radical cations were proposed as intermediates.4 In the structure of -amyloid peptide, the formation of Met radical cations appears to be facilitated by a preexisting close sulfur-oxygen (S-O) interaction between the Met35 sulfur and the carbonyl oxygen of the peptide bond C-terminal to Ile31.5 Substitution of Ile31 with Pro31 abolishes this S-O interaction,5 significantly reducing the ability of -amyloid to reduce Cu(II), and converts the neurotoxic wild-type -amyloid into a non-toxic peptide.6 The preexisting S-O bond characterized for wild-type -amyloid suggests that electron transfer from Met35 to Cu(II) is supported through stabilization of the Met radical cation by the electron-rich carbonyl oxygen, generating an SO-bonded7 sulfide radical cation (Scheme 1, reaction 1).5

  11. Electrochemical formation of field emitters

    SciTech Connect (OSTI)

    Bernhardt, Anthony F. (Berkeley, CA)

    1999-01-01

    Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

  12. Room-temperature Formation of Hollow Cu2O Nanoparticles

    E-Print Network [OSTI]

    Hung, Ling-I

    2011-01-01

    is prohibited by the surface oxide layer, the thickness ofthe formation of an oxide layer prevents further exposure ofpenetrating into the oxide layer rapidly by tunneling to

  13. Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition

    SciTech Connect (OSTI)

    Anders, Andre

    2010-11-26

    The chemistry, microstructure, and catalytic activity of thin films incorporating palladium were studied using scanning and transmission electron microscopies, X-ray diffraction, spectrophotometry, 4-point probe and catalytic tests. The films were synthesized using pulsed filtered cathodic arc and magnetron sputter deposition, i.e. techniques far from thermodynamic equilibrium. Catalytic particles were formed by thermally cycling thin films of the Pd-Pt-O system. The evolution and phase formation in such films as a function of temperature were discussed in terms of the stability of PdO and PtO2 in air. The catalytic efficiency was found to be strongly affected by the chemical composition, with oxidized palladium definitely playing a major role in the combustion of methane. Reactive sputter deposition of thin films in the Pd-Zr-Y-O system allowed us forming microstructures ranging from nanocrystalline zirconia to palladium nanoparticles embedded in a (Zr,Y)4Pd2O matrix. The sequence of phase formation is put in relation to simple thermodynamic considerations.

  14. Chemistry, phase formation, and catalytic activity of thin palladium-containing oxide films synthesized by plasma-assisted physical vapor deposition

    E-Print Network [OSTI]

    Anders, Andre

    2011-01-01

    catalytic activity of thin palladium-containing oxide filmscatalytic activity of thin palladium- containing oxide filmsfilms incorporating palladium were studied using scanning

  15. Mechanism of the hydroxy radical oxidation of methacryoyl peroxynitrate (MPAN) and its pathway toward secondary organic aerosol formation in the atmosphere

    SciTech Connect (OSTI)

    Nguyen, Tran B.; Bates, Kelvin H.; Crounse, J. D.; Schwantes, Rebecca H.; Zhang, Xuan; Kjaergaard, Henrik G.; Surratt, Jason D.; Lin, Peng; Laskin, Alexander; Seinfeld, John H.; Wennberg, P. O.

    2015-01-01

    Methacryoyl peroxynitrate (MPAN), the acylperoxyl nitrate of methacrolein, has been suggested to be an important secondary organic aerosol (SOA) precursor from isoprene oxidation. Yet, the mechanism by which MPAN produces SOA via reaction with the hydroxyl radical (OH) is unclear. We systematically evaluate three proposed mechanisms in controlled chamber experiments and provide the first experimental support for the theoretically-predicted lactone formation pathway from the MPAN + OH reaction, producing hydroxymethyl-methyl-?-lactone (HMML). The decomposition of the MPAN-OH adduct yields HMML + NO3 (~ 75%) and hydroxyacetone + CO + NO3 (~ 25%), out-competing its reaction with atmospheric oxygen. The production of other proposed SOA precursors, e.g., methacrylic acid epoxide (MAE), from MPAN and methacrolein are negligible (< 2 %). Furthermore, we show that the beta-alkenyl moiety of MPAN is critical for lactone formation. Alkyl radicals formed via OH abstraction nstead of addition are thermalized; thus, even if they are structurally identical to the MPAN-OH adduct, they do not decompose to HMML. The SOA formation from HMML, via polyaddition of the lactone to organic compounds, is close to unity under dry conditions. However, the SOA yield is sensitive to particle liquid water and solvated ions. In hydrated sulfate-containing particles, HMML reacts primarily with H2O and aqueous sulfate, producing monomeric 2-methylglyceric acid (2MGA) and the associated organosulfate. 2MGA, a tracer for isoprene SOA, is semivolatile and its volatility increases with decreasing pH in the aerosol water. Conditions that enhance the production of neutral 2MGA will suppress SOA mass from the HMML channel. Considering the liquid water content and pH ranges of ambient particles, MGA may exist largely as a gaseous compound in some parts of the atmosphere.

  16. Trapped ion scaling with pulsed fast gates

    E-Print Network [OSTI]

    C. D. B. Bentley; A. R. R. Carvalho; J. J. Hope

    2015-07-10

    Fast entangling gates for trapped ions offer vastly improved gate operation times relative to implemented gates, as well as approaches to trap scaling. Gates on neighbouring ions only involve local ions when performed sufficiently fast, and we find that even a fast gate between distant ions with few degrees of freedom restores all the motional modes given more stringent gate speed conditions. We compare pulsed fast gate schemes, defined by a timescale faster than the trap period, and find that our proposed scheme has less stringent requirements on laser repetition rate for achieving arbitrary gate time targets and infidelities well below $10^{-4}$. By extending gate schemes to ion crystals, we explore the effect of ion number on gate fidelity for coupling neighbouring pairs of ions in large crystals. Inter-ion distance determines the gate time, and a factor of five increase in repetition rate, or correspondingly the laser power, reduces the infidelity by almost two orders of magnitude. We also apply our fast gate scheme to entangle the first and last ions in a crystal. As the number of ions in the crystal increases, significant increases in the laser power are required to provide the short gate times corresponding to fidelity above 0.99.

  17. Planning a cost-effective gate rehab

    SciTech Connect (OSTI)

    Rudolph, R.M.; Gundry, J.A. [American Society of Civil Engineers, Nashville, TN (United States)

    1996-04-01

    Hydropower project owners are devoting increasing attention to the condition and safety of spillway gates and related equipment. With careful inspection and planning, owners can develop a rehabilitation program that improves gate performance and minimizes cost. The July 1995 failure of a spillway gate at Folsom Dam has spurred increased attention on inspection and rehabilitation of gates. This article explains an approach taken by Northern States Power Company in rehabilitating aged gates at its Wisota Dam project. An update on measures being taken in response to the Folsom Dam incident is also included.

  18. Graphene arch gate SiO2 shell silicon nanowire core field effect transistors

    E-Print Network [OSTI]

    Hwang, Sung Woo

    graphene into more complementary metal oxide semiconductor (CMOS)-friendly architectures. FurthermoreGraphene arch gate SiO2 shell silicon nanowire core field effect transistors J. E. Jin, J. H. Lee) metal-semiconductor field-effect transistors on single-crystal -Ga2O3 (010) substrates Appl. Phys. Lett

  19. Enhanced Biosensing Resolution with Foundry Fabricated Individually Addressable Dual-Gated ISFETs

    E-Print Network [OSTI]

    Bashir, Rashid

    small signals and increase the sensor accuracy when monitoring small pH dynamics in biological reactions reactions into electrical signals.1,2 In an ISFET, the gate region is exposed to an electrolyte, making,8,9 and ISFETs made with metal oxides and polymers are used to monitor biological activity.10

  20. Amorphorized tantalum-nickel binary films for metal gate applications

    SciTech Connect (OSTI)

    Ouyang, Jiaomin; Wongpiya, Ranida; Clemens, Bruce M.; Deal, Michael D.; Nishi, Yoshio

    2015-04-13

    Amorphous metal gates have the potential to eliminate the work function variation due to grain orientation for poly-crystalline metal gate materials, which is a leading contributor to threshold voltage variation for small transistors. Structural and electrical properties of TaNi alloys using co-sputtering with different compositions and multilayer structures with different thicknesses are investigated in this work. It is found that TaNi films are amorphous for a wide range of compositions as deposited, and the films stay amorphous after annealing at 400?°C in RTA for 1?min and up to at least 700?°C depending on the composition. The amorphous films eventually crystallize into Ni, Ta, and TaNi{sub 3} phases at high enough temperature. For multilayer Ta/Ni structures, samples with individual layer thickness of 0.12?nm and 1.2?nm are amorphous as deposited due to intermixing during deposition, and stay amorphous until annealed at 500?°C. The resistivity of the films as-deposited are around 200 ??·cm. The work function of the alloy is fixed at close to the Ta work function of 4.6?eV for a wide range of compositions. This is attributed to the segregation of Ta at the metal-oxide interface, which is confirmed by XPS depth profile. Overall, the excellent thermal stability and low resistivity makes this alloy system a promising candidate for eliminating work function variation for gate last applications, as compared to crystalline Ta or TiN gates.

  1. Stage-Gate Innovation Management Guidelines

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    It is critical, therefore, that there is an effective pathway for innovative technology and new technical information to reach the end-user. The Stage-Gate Innovation...

  2. Towards Magneto-Logic Gates in Graphene

    E-Print Network [OSTI]

    Wen, Hua

    2014-01-01

    using graphene based spintronic logic gates. Proc. SPIE,applications using spintronic devices for logic operationa leading candidate for spintronic applications due to its

  3. Si and SiGe based double top gated accumulation mode single electron transistors for quantum bits.

    SciTech Connect (OSTI)

    Wendt, Joel Robert; Ten Eyck, Gregory A.; Childs, Kenton David; Celler, G. (SOITEC); Eng, Kevin; Eriksson, Mark A. (University of Wisconsin); Kluskiewicz, Dan (University of New Mexico); Stevens, Jeffrey; Carroll, Malcolm S.; Nordberg, Eric; Lilly, Michael Patrick; Lemp, Thomas; Sheng, Josephine Juin-Jye

    2008-10-01

    There is significant interest in forming quantum bits (qubits) out of single electron devices for quantum information processing (QIP). Information can be encoded using properties like charge or spin. Spin is appealing because it is less strongly coupled to the solid-state environment so it is believed that the quantum state can better be preserved over longer times (i.e., that is longer decoherence times may be achieved). Long spin decoherence times would allow more complex qubit operations to be completed with higher accuracy. Recently spin qubits were demonstrated by several groups using electrostatically gated modulation doped GaAs double quantum dots (DQD) [1], which represented a significant breakthrough in the solid-state field. Although no Si spin qubit has been demonstrated to date, work on Si and SiGe based spin qubits is motivated by the observation that spin decoherence times can be significantly longer than in GaAs. Spin decoherence times in GaAs are in part limited by the random spectral diffusion of the non-zero nuclear spins of the Ga and As that couple to the electron spin through the hyperfine interaction. This effect can be greatly suppressed by using a semiconductor matrix with a near zero nuclear spin background. Near zero nuclear spin backgrounds can be engineered using Si by growing {sup 28}Si enriched epitaxy. In this talk, we will present fabrication details and electrical transport results of an accumulation mode double top gated Si metal insulator semiconductor (MIS) nanostructure, Fig 1 (a) & (b). We will describe how this single electron device structure represent a path towards forming a Si based spin qubit similar in design as that demonstrated in GaAs. Potential advantages of this novel qubit structure relative to previous approaches include the combination of: no doping (i.e., not modulation doped); variable two-dimensional electron gas (2DEG) density; CMOS compatible processes; and relatively small vertical length scales to achieve smaller dots. A primary concern in this structure is defects at the insulator-silicon interface. The Sandia National Laboratories 0.35 {micro}m fab line was used for critical processing steps including formation of the gate oxide to examine the utility of a standard CMOS quality oxide silicon interface for the purpose of fabricating Si qubits. Large area metal oxide silicon (MOS) structures showed a peak mobility of 15,000 cm{sup 2}/V-s at electron densities of {approx}1 x 10{sup 12} cm{sup -2} for an oxide thickness of 10 nm. Defect density measured using standard C-V techniques was found to be greater with decreasing oxide thickness suggesting a device design trade-off between oxide thickness and quantum dot size. The quantum dot structure is completed using electron beam lithography and poly-silicon etch to form the depletion gates, Fig 1 (a). The accumulation gate is added by introducing a second insulating Al{sub 2}O{sub 3} layer, deposited by atomic layer deposition, followed by an Al top gate deposition, Fig. 1 (b). Initial single electron transistor devices using SiO{sub 2} show significant disorder in structures with relatively large critical dimensions of the order of 200-300 nm, Fig 2. This is not uncommon for large silicon structures and has been cited in the literature [2]. Although smaller structures will likely minimize the effect of disorder and well controlled small Si SETs have been demonstrated [3], the design constraints presented by disorder combined with long term concerns about effects of defects on spin decoherence time (e.g., paramagnetic centers) motivates pursuit of a 2nd generation structure that uses a compound semiconductor approach, an epitaxial SiGe barrier as shown in Fig. 2 (c). SiGe may be used as an electron barrier when combined with tensilely strained Si. The introduction of strained-Si into the double top gated device structure, however, represents additional fabrication challenges. Thermal budget is potentially constrained due to concerns related to strain relaxation. Fabrication details related to the introduction of st

  4. THE ROLE OF ACTIVE ELEMENTS AND OXIDE DISPERSIONS IN THE DEVELOPMENT OF OXIDATION-RESISTANT ALLOYS AND COATINGS

    E-Print Network [OSTI]

    Allam, I.M.

    2010-01-01

    rate, and sec- ondly this oxide layer must remain adherentFormation of a compound oxide layer (11) between scale andof Y- or Hf-rich compound oxide layers at the oxide/alloy

  5. Atomistic characterization of SAM coatings as gate insulators in Si-based FET devices

    SciTech Connect (OSTI)

    Gala, F. [Universitá di Roma La Sapienza, Via Scarpa 14-16, 00161 Rome (Italy); Zollo, G. [Universitá di Roma La Sapienza', Via Scarpa 14-16, 00161 Rome (Italy)

    2014-06-19

    Many nano-material systems are currently under consideration as possible candidates for gate dielectric insulators in both metal-oxide-semiconductor (MOSFET) and organic (OFET) field-effect transistors. In this contribution, the possibility of employing self-assembled monolayers (SAMs) of hydroxylated octadecyltrichlorosilane (OTS) chains on a (111) Si substrate as gate dielectrics is discussed; in particular ab initio theoretical simulations have been employed to study the structural properties, work function modifications, and the insulating properties of OTS thin film coatings on Si substrates.

  6. Gate Solar | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QA J-E-1 SECTION J APPENDIX E LIST OFAMERICA'SHeavy ElectricalsFTL SolarGate Solar Jump to: navigation, search Name:

  7. Asynchronous Balanced Gates Tolerant to Interconnect Variability

    E-Print Network [OSTI]

    Karpovsky, Mark

    values and transitions to ensure that it does not produce a data-dependent power signature which can switching at the output of the gate. However, in the existing designs the data-independent power consumption and the unavoidable variation due to manufacture. We present gate designs which have data-independent power

  8. High Performance Electrolyte Gated Carbon Nanotube Transistors

    E-Print Network [OSTI]

    Gore, Jeff

    High Performance Electrolyte Gated Carbon Nanotube Transistors Sami Rosenblatt, Yuval Yaish, Jiwoong Park,, Jeff Gore, Vera Sazonova, and Paul L. McEuen*, Laboratory of Atomic and Solid State Physics to grow the tubes, annealing to improve the contacts, and an electrolyte as a gate, we obtain very high

  9. Retaining latch for a water pit gate

    DOE Patents [OSTI]

    Beale, A.R.

    1997-11-18

    A retaining latch is described for use in a hazardous materials storage or handling facility to adjustably retain a water pit gate in a gate frame. A retaining latch is provided comprising a latch plate which is rotatably mounted to each end of the top of the gate and a recessed opening, formed in the gate frame, for engaging an edge of the latch plate. The latch plate is circular in profile with one side cut away or flat, such that the latch plate is D-shaped. The remaining circular edge of the latch plate comprises steps of successively reduced thickness. The stepped edge of the latch plate fits inside a recessed opening formed in the gate frame. As the latch plate is rotated, alternate steps of the latch plate are engaged by the recessed opening. When the latch plate is rotated such that the flat portion of the latch plate faces the recessed opening in the gate frame, there is no connection between the opening and the latch plate and the gate is unlatched from the gate frame. 4 figs.

  10. Unbalanced edge modes and topological phase transition in gated...

    Office of Scientific and Technical Information (OSTI)

    Unbalanced edge modes and topological phase transition in gated trilayer graphene Prev Next Title: Unbalanced edge modes and topological phase transition in gated trilayer...

  11. Vehicle Technologies Office Merit Review 2015: Gate Driver Optimizatio...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Gate Driver Optimization for WBG Applications Vehicle Technologies Office Merit Review 2015: Gate Driver Optimization for WBG Applications Presentation given by Oak Ridge National...

  12. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE) PROGRAM FOR 2009 DOE Hydrogen Program and...

  13. University of Illinois at Urbana-Champaign's GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaign's GATE Center for Advanced Automotive Bio-Fuel Combustion...

  14. Gate-tunable exchange coupling between cobalt clusters on graphene...

    Office of Scientific and Technical Information (OSTI)

    Accepted Manuscript: Gate-tunable exchange coupling between cobalt clusters on graphene Title: Gate-tunable exchange coupling between cobalt clusters on graphene Authors:...

  15. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers [EERE]

    MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah River Nuclear Solution (SRNS) MedGate...

  16. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively,more »by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.« less

  17. Tuning the metal-insulator crossover and magnetism in SrRuO3 by ionic gating

    SciTech Connect (OSTI)

    Yi, Hee Taek; Gao, Bin; Xie, Wei; Cheong, Sang -Wook; Podzorov, Vitaly

    2014-10-13

    Reversible control of charge transport and magnetic properties without degradation is a key for device applications of transition metal oxides. Chemical doping during the growth of transition metal oxides can result in large changes in physical properties, but in most of the cases irreversibility is an inevitable constraint. We report a reversible control of charge transport, metal-insulator crossover and magnetism in field-effect devices based on ionically gated archetypal oxide system - SrRuO3. In these thin-film devices, the metal-insulator crossover temperature and the onset of magnetoresistance can be continuously and reversibly tuned in the range 90–250 K and 70–100 K, respectively, by application of a small gate voltage. We infer that a reversible diffusion of oxygen ions in the oxide lattice dominates the response of these materials to the gate electric field. These findings provide critical insights into both the understanding of ionically gated oxides and the development of novel applications.

  18. Comment on "Catalytic Activity of the Rh Surface Oxide: CO Oxidation over Rh(111)

    E-Print Network [OSTI]

    Goodman, Wayne

    . Obviously, heating Rh in pure oxygen to T ) 230 °C and above will lead to the formation of surface Rh oxideComment on "Catalytic Activity of the Rh Surface Oxide: CO Oxidation over Rh(111) under Realistic suggest the importance of a surface oxide phase for high CO2 formation in CO-O2 reactions. However

  19. Ancilla-Assisted Discrimination of Quantum Gates

    E-Print Network [OSTI]

    Jianxin Chen; Mingsheng Ying

    2008-09-02

    The intrinsic idea of superdense coding is to find as many gates as possible such that they can be perfectly discriminated. In this paper, we consider a new scheme of discrimination of quantum gates, called ancilla-assisted discrimination, in which a set of quantum gates on a $d-$dimensional system are perfectly discriminated with assistance from an $r-$dimensional ancilla system. The main contribution of the present paper is two-fold: (1) The number of quantum gates that can be discriminated in this scheme is evaluated. We prove that any $rd+1$ quantum gates cannot be perfectly discriminated with assistance from the ancilla, and there exist $rd$ quantum gates which can be perfectly discriminated with assistance from the ancilla. (2) The dimensionality of the minimal ancilla system is estimated. We prove that there exists a constant positive number $c$ such that for any $k\\leq cr$ quantum gates, if they are $d$-assisted discriminable, then they are also $r$-assisted discriminable, and there are $c^{\\prime}r\\textrm{}(c^{\\prime}>c)$ different quantum gates which can be discriminated with a $d-$dimensional ancilla, but they cannot be discriminated if the ancilla is reduced to an $r-$dimensional system. Thus, the order $O(r)$ of the number of quantum gates that can be discriminated with assistance from an $r-$dimensional ancilla is optimal. The results reported in this paper represent a preliminary step toward understanding the role ancilla system plays in discrimination of quantum gates as well as the power and limit of superdense coding.

  20. Epoxidation of the methamphetamine pyrolysis product, trans-phenylpropene, to trans-phenylpropylene oxide by CYP enzymes and stereoselective glutathione adduct formation

    SciTech Connect (OSTI)

    Sanga, Madhu [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Younis, Islam R. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Tirumalai, Padma S. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Bland, Tina M. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Banaszewska, Monica [Department of Neurobiology and Anatomy, West Virginia University, Morgantown, WV 26506 (United States); Konat, Gregory W. [Department of Neurobiology and Anatomy, West Virginia University, Morgantown, WV 26506 (United States); Tracy, Timothy S. [Department of Experimental and Clinical Pharmacology, University of Minnesota, Minneapolis, MN 55455 (United States); Gannett, Peter M. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States); Callery, Patrick S. [Department of Basic Pharmaceutical Sciences, West Virginia University, 1 Medical Center Drive, Morgantown, WV 26506 (United States)]. E-mail: pcallery@hsc.wvu.edu

    2006-03-01

    Pyrolytic products of smoked methamphetamine hydrochloride are well established. Among the various degradation products formed, trans-phenylpropene (trans-{beta}-methylstyrene) is structurally similar to styrene analogues known to be bioactivated by CYP enzymes. In human liver microsomes, trans-phenylpropene was converted to the epoxide trans-phenylpropylene oxide (trans-2-methyl-3-phenyloxirane) and cinnamyl alcohol. Incubation of trans-phenylpropene with microsomes in the presence of enzyme-specific P450 enzyme inhibitors indicated the involvement of CYP2E1, CYP1A2, and CYP3A4 enzymes. Both (R,R)-phenylpropylene oxide and (S,S)-phenylpropylene oxide were formed in human liver microsomal preparations. Enantiomers of trans-phenylpropylene oxide were stereoselectively and regioselectively conjugated in a Phase II drug metabolism reaction catalyzed by human liver cytosolic enzymes consisting of conjugation with glutathione. The structure of the phenylpropylene oxide-glutathione adduct is consistent with nucleophilic ring-opening by attack at the benzylic carbon. Exposure of cultured C6 glial cells to (S,S)-phenylpropylene oxide produced a cytotoxic response in a concentration-dependent manner based on cell degeneration and death.

  1. Electrochemical formation of field emitters

    DOE Patents [OSTI]

    Bernhardt, A.F.

    1999-03-16

    Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.

  2. Range gating experiments through a scattering media

    SciTech Connect (OSTI)

    Payton, J.; Cverna, F.; Gallegos, R.; McDonald, T.; Numkena, D.; Obst, A.; Pena-Abeyta, C.; Yates, G.

    1998-12-31

    This paper discusses range-gated imaging experiments performed recently at Redstone Arsenal in Huntsville, Alabama. Range gating is an imaging technique that uses a pulsed laser and gated camera to image objects at specific ranges. The technique can be used for imaging through scattering media such as dense smoke or fog. Range gating uses the fact that light travels at 3 x 10{sup 8} m/s. Knowing the speed of light the authors can calculate the time it will take the laser light to travel a known distance, then gate open a Micro Channel Plate Image Intensifier (MCPII) at the time the reflected light returns from the target. In the Redstone experiment the gate width on the MCPII was set to equal the laser pulse width ({approximately} 8 ns) for the highest signal to noise ratio. The gate allows the light reflected form the target and a small portion of the light reflected from the smoke in the vicinity of the target to be imaged. They obtained good results in light and medium smoke but the laser they were used did not have sufficient intensity to penetrate the thickest smoke. They did not diverge the laser beam to cover the entire target in order to maintain a high flux that would achieve better penetration through the smoke. They were able to image an Armored Personnel Carrier (APC) through light and medium smoke but they were not able to image the APC through heavy smoke. The experiment and results are presented.

  3. Extremely scaled high-k/In?.??Ga?.??As gate stacks with low leakage and low interface trap densities

    SciTech Connect (OSTI)

    Chobpattana, Varistha; Mikheev, Evgeny; Zhang, Jack Y.; Mates, Thomas E.; Stemmer, Susanne

    2014-09-28

    Highly scaled gate dielectric stacks with low leakage and low interface trap densities are required for complementary metal-oxide-semiconductor technology with III-V semiconductor channels. Here, we show that a novel pre-deposition technique, consisting of alternating cycles of nitrogen plasma and tetrakis(dimethylamino)titanium, allows for HfO? and ZrO? gate stacks with extremely high accumulation capacitance densities of more than 5 ?F/cm? at 1 MHz, low leakage current, low frequency dispersion, and low midgap interface trap densities (10¹²cm?²eV?¹range). Using x-ray photoelectron spectroscopy, we show that the interface contains TiO? and small quantities of In?O?, but no detectable Ga- or As-oxides, or As-As bonding. The results allow for insights into the microscopic mechanisms that control leakage and frequency dispersion in high-k/III-V gate stacks.

  4. Efficient Modulation of 1.55 m Radiation with Gated Graphene on a Silicon Micro-ring Resonator

    E-Print Network [OSTI]

    Natelson, Douglas

    with complementary metal-oxide-semiconductor technology. #12;(TOC) Keywords: graphene photonics, NIR modulatorEfficient Modulation of 1.55 µm Radiation with Gated Graphene on a Silicon Micro-ring Resonator-edge onset of interband absorption in graphene can be utilized to modulate near-infrared radiation

  5. Effects of Additive Elements on the Phase Formation and Morphological Stability of Nickel Monosilicide Films

    SciTech Connect (OSTI)

    Lavoie,C.; Detavernier, C.; Cabral, Jr. , C.; d'Heurle, F.; Kellock, A.; Jordan-Sweet, J.; Harper, J.

    2006-01-01

    Alloying elements can substantially affect the formation and morphological stability of nickel monosilicide. A comprehensive study of phase formation was performed on 24 Ni alloys with varying concentrations of alloying elements. Silicide films have been used for more than 15 years to contact the source, drain and gate of state-of-the-art complementary-metal-oxide-semiconductor (CMOS) devices. In the past, the addition of alloying elements was shown to improve the transformation from the high resistivity C49 to the low resistivity C54-TiSi{sub 2} phase and to allow for the control of surface and interface roughness of CoSi{sub 2} films as well as produce significant improvements with respect to agglomeration of the films. Using simultaneous time-resolved X-ray diffraction (XRD), resistance and light scattering measurements, we follow the formation of the silicide phases in real time during rapid thermal annealing. Additions to the Ni-Si system lead to modifications in the phase formation sequence at low temperatures (metal-rich phases), to variations in the formation temperatures of NiSi and NiSi{sub 2}, and to changes in the agglomeration behavior of the films formed. Of the 24 elements studied, additions of Mo, Re, Ta and W are amongst the most efficient to retard agglomeration while elements such as Pd, Pt and Rh are most efficient to retard the formation of NiSi{sub 2}.

  6. Formation of nanofilament field emission devices

    DOE Patents [OSTI]

    Morse, Jeffrey D. (Martinez, CA); Contolini, Robert J. (Lake Oswego, OR); Musket, Ronald G. (Danville, CA); Bernhardt, Anthony F. (Berkeley, CA)

    2000-01-01

    A process for fabricating a nanofilament field emission device. The process enables the formation of high aspect ratio, electroplated nanofilament structure devices for field emission displays wherein a via is formed in a dielectric layer and is self-aligned to a via in the gate metal structure on top of the dielectric layer. The desired diameter of the via in the dielectric layer is on the order of 50-200 nm, with an aspect ratio of 5-10. In one embodiment, after forming the via in the dielectric layer, the gate metal is passivated, after which a plating enhancement layer is deposited in the bottom of the via, where necessary. The nanofilament is then electroplated in the via, followed by removal of the gate passification layer, etch back of the dielectric, and sharpening of the nanofilament. A hard mask layer may be deposited on top of the gate metal and removed following electroplating of the nanofilament.

  7. Analog Noise Reduction in Enzymatic Logic Gates

    E-Print Network [OSTI]

    Dmitriy Melnikov; Guinevere Strack; Marcos Pita; Vladimir Privman; Evgeny Katz

    2009-05-17

    In this work we demonstrate both experimentally and theoretically that the analog noise generation by a single enzymatic logic gate can be dramatically reduced to yield gate operation with virtually no input noise amplification. This is achieved by exploiting the enzyme's specificity when using a co-substrate that has a much lower affinity than the primary substrate. Under these conditions, we obtain a negligible increase in the noise output from the logic gate as compared to the input noise level. Experimental realizations of the AND logic gate with the enzyme horseradish peroxidase using hydrogen peroxide and two different co-substrates, 2,2'-azino-bis(3-ethylbenzthiazoline-6-sulphonic acid) (ABTS) and ferrocyanide, with vastly different rate constants confirmed our general theoretical conclusions.

  8. High level compilation for gate reconfigurable architectures

    E-Print Network [OSTI]

    Babb, Jonathan William

    2001-01-01

    A continuing exponential increase in the number of programmable elements is turning management of gate-reconfigurable architectures as "glue logic" into an intractable problem; it is past time to raise this abstraction ...

  9. Digital gate pulse generator for cycloconverter control

    DOE Patents [OSTI]

    Klein, Frederick F. (Monroeville, PA); Mutone, Gioacchino A. (Pleasant Hills, PA)

    1989-01-01

    The present invention provides a digital gate pulse generator which controls the output of a cycloconverter used for electrical power conversion applications by determining the timing and delivery of the firing pulses to the switching devices in the cycloconverter. Previous gate pulse generators have been built with largely analog or discrete digital circuitry which require many precision components and periodic adjustment. The gate pulse generator of the present invention utilizes digital techniques and a predetermined series of values to develop the necessary timing signals for firing the switching device. Each timing signal is compared with a reference signal to determine the exact firing time. The present invention is significantly more compact than previous gate pulse generators, responds quickly to changes in the output demand and requires only one precision component and no adjustments.

  10. NovJ/NovK Catalyze Benzylic Oxidation of a -Hydroxyl Tyrosyl-S-pantetheinyl Enzyme during Aminocoumarin Ring Formation in Novobiocin Biosynthesis

    E-Print Network [OSTI]

    biosynthesis, the phenolic 7-OH of the bicyclic aminocoumarin scaffold is L-noviosy- lated while the 2-NH2 Aminocoumarin Ring Formation in Novobiocin Biosynthesis M. Pacholec, N. J. Hillson, and C. T. Walsh* Department

  11. Gate fidelity fluctuations and quantum process invariants

    SciTech Connect (OSTI)

    Magesan, Easwar; Emerson, Joseph [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada); Blume-Kohout, Robin [Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2011-07-15

    We characterize the quantum gate fidelity in a state-independent manner by giving an explicit expression for its variance. The method we provide can be extended to calculate all higher order moments of the gate fidelity. Using these results, we obtain a simple expression for the variance of a single-qubit system and deduce the asymptotic behavior for large-dimensional quantum systems. Applications of these results to quantum chaos and randomized benchmarking are discussed.

  12. GaTe semiconductor for radiation detection

    DOE Patents [OSTI]

    Payne, Stephen A. (Castro Valley, CA); Burger, Arnold (Nashville, TN); Mandal, Krishna C. (Ashland, MA)

    2009-06-23

    GaTe semiconductor is used as a room-temperature radiation detector. GaTe has useful properties for radiation detectors: ideal bandgap, favorable mobilities, low melting point (no evaporation), non-hygroscopic nature, and availability of high-purity starting materials. The detector can be used, e.g., for detection of illicit nuclear weapons and radiological dispersed devices at ports of entry, in cities, and off shore and for determination of medical isotopes present in a patient.

  13. PII S0016-7037(98)00136-7 The kinetics of mixed Ni-Al hydroxide formation on clay and aluminum oxide minerals

    E-Print Network [OSTI]

    Sparks, Donald L.

    oxide minerals: A time-resolved XAFS study ANDR´E M. SCHEIDEGGER,1,2, * DANIEL G. STRAWN,1 GERALDINE M of sorption decreased significantly and depended on the type of mineral surface. For the Ni with increasing reaction time. Our study suggests that three phenomena occur at the mineral/liquid interface: (1

  14. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, Thomas E. (Livermore, CA)

    1996-01-01

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance.

  15. Range gated strip proximity sensor

    DOE Patents [OSTI]

    McEwan, T.E.

    1996-12-03

    A range gated strip proximity sensor uses one set of sensor electronics and a distributed antenna or strip which extends along the perimeter to be sensed. A micro-power RF transmitter is coupled to the first end of the strip and transmits a sequence of RF pulses on the strip to produce a sensor field along the strip. A receiver is coupled to the second end of the strip, and generates a field reference signal in response to the sequence of pulse on the line combined with received electromagnetic energy from reflections in the field. The sensor signals comprise pulses of radio frequency signals having a duration of less than 10 nanoseconds, and a pulse repetition rate on the order of 1 to 10 MegaHertz or less. The duration of the radio frequency pulses is adjusted to control the range of the sensor. An RF detector feeds a filter capacitor in response to received pulses on the strip line to produce a field reference signal representing the average amplitude of the received pulses. When a received pulse is mixed with a received echo, the mixing causes a fluctuation in the amplitude of the field reference signal, providing a range-limited Doppler type signature of a field disturbance. 6 figs.

  16. Engineer Nanocrystal Floating Gate Memory Scaling

    E-Print Network [OSTI]

    Ren, Jingjian

    2012-01-01

    layer is inserted into the oxide layer as the charge storagefor charge storage. As oxide layer gets thinner with scalingtunnel through the thin oxide layer and get trapped in the

  17. Structure-activity relationship of Au-ZrO2 catalyst on formation of hydroxyl groups and its influence on CO oxidation

    SciTech Connect (OSTI)

    Karwacki, Christopher J; Ganesh, Panchapakesan; Kent, P. R. C.; Gordon, Wesley O; Peterson, Gregory W; Niu, Jun Jie; Gogotsi, Yury G.

    2013-01-01

    The effect of changes in morphology and surface hydroxyl species upon thermal treatment of zirconia on the oxidation activity of Au/ZrO2 catalyst was studied. We observed using transmission Fourier transform infrared (FTIR) spectroscopy progressive changes in the presence of monodentate (type I), bidentate (type II) and hydrogen bridged species (type III) for each of the thermally treated (85 to 500 C) supports consisting of bare zirconia and Au/ZrO2 catalysts. Furthermore, structural changes in zirconia were accompanied by an increase in crystal size (7 to 58 nm) and contraction of the supports porosity (SSA 532 to 7 m2 g 1) with increasing thermal treatment. Deposition of gold nanoparticles under similar preparation conditions on different thermally treated zirconia resulted in changes in the mean gold cluster size, ranging from 3.7 to 5.6 nm. Changes in the surface hydroxyl species, support structure and size of the gold centers are important parameters responsible for the observed decrease (>90%) in CO conversion activity for the Au/ZrO2 catalysts. Density functional theory calculations provide evidence of increased CO binding to Au nanoclusters in the presence of surface hydroxyls on zirconia, which increases charge transfer at the perimeter of the gold nanocluster on zirconia support. This further helps in reducing a model CO-oxidation reaction barrier in the presence of surface hydroxyls. This work demonstrates the need to understand the structure activity relationship of both the support and active particles for the design of catalytic materials.

  18. Structure-Activity Relationship of Au/ZrO2 Catalyst on Formation of Hydroxyl Groups and Its Influence on CO Oxidation

    SciTech Connect (OSTI)

    Karwacki, Christopher J; Ganesh, Panchapakesan; Gordon, Wesley O; Peterson, Gregory W; Niu, Jun Jie; Gogotsi, Yury G.

    2013-01-01

    The effect of changes in morphology and surface hydroxyl species upon thermal treatment of zirconia on the oxidation activity of Au/ZrO2 catalyst was studied. We observed using transmission fourier transform infrared (FTIR) spectroscopy progressive changes in the presence of monodentate (type I), bidentate (type II) and hydrogen bridged species (type III) for each of the thermally treated (85 to 500 C) supports consisting of bare zirconia and Au/ZrO2 catalysts. Furthermore, structural changes in zirconia were accompanied by an increase in crystal size (7 to 58 nm) and contraction of the supports porosity (SSA 532 to 7 m2/g) with increasing thermal treatment. Deposition of gold nanoparticles under similar preparation conditions on different thermally treated zirconia resulted in changes in the mean gold cluster size, ranging from 3.7 to 5.6 nm. Changes in the surface hydroxyl species, support structure and size of the gold centers are important parameters responsible for the observed decrease (> 90 %) in CO conversion activity for the Au/ZrO2 catalysts. Density functional theory calculations provide evidence of increased CO binding to Au nanoclusters in the presence of surface hydroxyls on zirconia, which increases charge transfer at the perimeter of the gold nanocluster on zirconia support. This further helps in reducing a model CO-oxidation reaction barrier in the presence of surface hydroxyls. This work demonstrates the need to understand the structure-activity relationship of both the support and active particles for the design of catalytic materials.

  19. Gates, Oregon: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky: Energy ResourcesMaui Area (DOEMaui AreaGastonGatesGates,

  20. Electroluminescence in ion gel gated organic polymer semiconductor transistors

    E-Print Network [OSTI]

    Bhat, Shrivalli

    2011-07-12

    This thesis reports the light emission in ion gel gated, thin film organic semiconductor transistors and investigates the light emission mechanism behind these devices. We report that ion gel gated organic polymer semiconductor transistors emit...

  1. Downhole burner systems and methods for heating subsurface formations

    DOE Patents [OSTI]

    Farmayan, Walter Farman (Houston, TX); Giles, Steven Paul (Damon, TX); Brignac, Jr., Joseph Phillip (Katy, TX); Munshi, Abdul Wahid (Houston, TX); Abbasi, Faraz (Sugarland, TX); Clomburg, Lloyd Anthony (Houston, TX); Anderson, Karl Gregory (Missouri City, TX); Tsai, Kuochen (Katy, TX); Siddoway, Mark Alan (Katy, TX)

    2011-05-31

    A gas burner assembly for heating a subsurface formation includes an oxidant conduit, a fuel conduit, and a plurality of oxidizers coupled to the oxidant conduit. At least one of the oxidizers includes a mix chamber for mixing fuel from the fuel conduit with oxidant from the oxidant conduit, an igniter, and a shield. The shield includes a plurality of openings in communication with the oxidant conduit. At least one flame stabilizer is coupled to the shield.

  2. On the Query Complexity of Perfect Gate Discrimination

    E-Print Network [OSTI]

    D'Ariano, Giacomo Mauro

    On the Query Complexity of Perfect Gate Discrimination Giulio Chiribella1 , Giacomo Mauro D'Ariano2 both deterministic strategies. For unambiguous gate discrimination, where errors are not tolerated that there is no difference between perfect probabilistic and perfect determin- istic gate discrimination. Hence, evaluating

  3. Tamper Resilient Circuits: The Adversary at the Gates Aggelos Kiayias

    E-Print Network [OSTI]

    International Association for Cryptologic Research (IACR)

    Tamper Resilient Circuits: The Adversary at the Gates Aggelos Kiayias Yiannis Tselekounis Abstract We initiate the investigation of gate-tampering attacks against cryptographic circuits. Our model is motivated by the plausibility of tampering directly with circuit gates and by the increasing use of tamper

  4. 846 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 Simulation of Oxide Trapping Noise in

    E-Print Network [OSTI]

    Florida, University of

    846 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 3, MARCH 2003 Simulation of Oxide Trapping--Carrier trapping via tunneling into the gate oxide was implemented into a partial differential equation -based are calculated using the carrier tunneling rates between trap centers in the oxide and those at the interface

  5. A Dual Platform for Selective Analyte Enrichment and Ionization in Mass Spectrometry Using Aptamer-Conjugated Graphene Oxide

    E-Print Network [OSTI]

    Tan, Weihong

    -Conjugated Graphene Oxide Basri Gulbakan, Emir Yasun, M. Ibrahim Shukoor, Zhi Zhu, Mingxu You, Xiaohong Tan,, Hernan: This study demonstrates the use of aptamer-conju- gated graphene oxide as an affinity extraction a matrix and with greatly improved signal- to-noise ratios. Aptamer-conjugated graphene oxide has clear

  6. Cavity-QED-based quantum phase gate 

    E-Print Network [OSTI]

    Zubairy, M. Suhail; Kim, M.; Scully, Marlan O.

    2003-01-01

    appropriately detuned from the other mode of the cavit photon each in the two modes and the atom is initially gate in such a system and discuss potential applications DOI: 10.1103/PhysRevA.68.033820 PAC I. INTRODUCTION Quantum computing @1# employs...

  7. Yuanmingyuan East Gate of Peking University

    E-Print Network [OSTI]

    Gu, Jin

    and New Energy Technology 32 Institute of Education Schools & Departments A Foreign Student AffairsRoad) MingdeRoad (XinminRoad) (XuetangRoad) (Zhishan Road) (Tsinghua Road) (XichunRoad) Car Zhaolanyuan Shopping Area West Gate New Qinghuaxuetang #12;

  8. An investigation of reaction parameters on geochemical storage of non-pure CO2 streams in iron oxides-bearing formations

    SciTech Connect (OSTI)

    Garcia, Susana; Liu, Q.; Bacon, Diana H.; Maroto-Valer, M. M.

    2014-08-26

    Hematite deposit that is the main FeIII-bearing mineral in sedimentary red beds was proposed as a potential host repository for converting CO2 into carbonate minerals such as siderite (FeCO3), when CO2–SO2 gas mixtures are co-injected. This work investigated CO2 mineral trapping using hematite and sensitivity of the reactive systems to different parameters, including particle size, gas composition, temperature, pressure, and solid-to-liquid ratio. Experimental and modelling studies of hydrothermal experiments were conducted, which emulated a CO2 sequestration scenario by injecting CO2-SO2 gas streams into a NaCl-NaOH brine hosted in iron oxide-containing aquifer. This study provides novel information on the mineralogical changes and fluid chemistry derived from the co-injection of CO2-SO2 gas mixtures in hematite deposit. It can be concluded that the amount of siderite precipitate depends primarily on the SO2 content of the gas stream. Increasing SO2 content in the system could promote the reduction of Fe3+ from the hematite sample to Fe2+, which will be further available for its precipitation as siderite. Moreover, siderite precipitation is enhanced at low temperatures and high pressures. The influence of the solid to liquid ratio on the overall carbonation reaction suggests that the conversion increases if the system becomes more diluted.

  9. ZIRCONIUM OXIDE NANOSTRUCTURES PREPARED BY ANODIC OXIDATION

    SciTech Connect (OSTI)

    Dang, Y. Y.; Bhuiyan, M.S.; Paranthaman, M. P.

    2008-01-01

    Zirconium oxide is an advanced ceramic material highly useful for structural and electrical applications because of its high strength, fracture toughness, chemical and thermal stability, and biocompatibility. If highly-ordered porous zirconium oxide membranes can be successfully formed, this will expand its real-world applications, such as further enhancing solid-oxide fuel cell technology. Recent studies have achieved various morphologies of porous zirconium oxide via anodization, but they have yet to create a porous layer where nanoholes are formed in a highly ordered array. In this study, electrochemical methods were used for zirconium oxide synthesis due to its advantages over other coating techniques, and because the thickness and morphology of the ceramic fi lms can be easily tuned by the electrochemical parameters, such as electrolyte solutions and processing conditions, such as pH, voltage, and duration. The effects of additional steps such as pre-annealing and post-annealing were also examined. Results demonstrate the formation of anodic porous zirconium oxide with diverse morphologies, such as sponge-like layers, porous arrays with nanoholes ranging from 40 to 75 nm, and nanotube layers. X-ray powder diffraction analysis indicates a cubic crystallographic structure in the zirconium oxide. It was noted that increased voltage improved the ability of the membrane to stay adhered to the zirconium substrate, whereas lower voltages caused a propensity for the oxide fi lm to fl ake off. Further studies are needed to defi ne the parameters windows that create these morphologies and to investigate other important characteristics such as ionic conductivity.

  10. Method for voltage-gated protein fractionation

    DOE Patents [OSTI]

    Hatch, Anson (Tracy, CA); Singh, Anup K. (Danville, CA)

    2012-04-24

    We report unique findings on the voltage dependence of protein exclusion from the pores of nanoporous polymer exclusion membranes. The pores are small enough that proteins are excluded from passage with low applied electric fields, but increasing the field enables proteins to pass through. The requisite field necessary for a change in exclusion is protein-specific with a correlation to protein size. The field-dependence of exclusion is important to consider for preconcentration applications. The ability to selectively gate proteins at exclusion membranes is also a promising means for manipulating and characterizing proteins. We show that field-gated exclusion can be used to selectively remove proteins from a mixture, or to selectively trap protein at one exclusion membrane in a series.

  11. Cluster computing software for GATE simulations

    SciTech Connect (OSTI)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-06-15

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values.

  12. Scanning probe microscopy imaging before and after atomic layer oxide deposition on a compound semiconductor surface

    E-Print Network [OSTI]

    Kummel, Andrew C.

    Scanning probe microscopy imaging before and after atomic layer oxide deposition on a compound fabricated using trimethylaluminum (TMA) and water atomic layer deposition (ALD) for the Al2O3 gate oxide level (Fig 2) suggesting that an ordered monolayer layer might be a requirement for unpinning

  13. Transport quantum logic gates for trapped ions

    E-Print Network [OSTI]

    D. Leibfried; E. Knill; C. Ospelkaus; D. J. Wineland

    2007-08-28

    Many efforts are currently underway to build a device capable of large scale quantum information processing (QIP). Whereas QIP has been demonstrated for a few qubits in several systems, many technical difficulties must be overcome in order to construct a large-scale device. In one proposal for large-scale QIP, trapped ions are manipulated by precisely controlled light pulses and moved through and stored in multizone trap arrays. The technical overhead necessary to precisely control both the ion geometrical configurations and the laser interactions is demanding. Here we propose methods that significantly reduce the overhead on laser beam control for performing single and multiple qubit operations on trapped ions. We show how a universal set of operations can be implemented by controlled transport of ions through stationary laser beams. At the same time, each laser beam can be used to perform many operations in parallel, potentially reducing the total laser power necessary to carry out QIP tasks. The overall setup necessary for implementing transport gates is simpler than for gates executed on stationary ions. We also suggest a transport-based two-qubit gate scheme utilizing microfabricated permanent magnets that can be executed without laser light.

  14. Theoretical analysis of initial adsorption of high-metal oxides on InxGa1-xAs,,0 0 1...-,,42... surfaces

    E-Print Network [OSTI]

    Kummel, Andrew C.

    are molecular beam deposition MBE and atomic layer deposition ALD . The importance of the struc- ture of the first oxide layer has been demonstrated for both MBE and ALD gate oxides deposition. For example, Hale et al. showed that the first layer of Ga2O deposition is critical in unpinning the oxide

  15. PENN STATE DOE GRADUATE AUTOMOTIVE TECHNOLOGY EDUCATION (GATE...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    of GATE fellows * Partners - none Milestones Goals and Objectives * Provide graduate curriculum focused on high-power in- vehicle energy storage for hybrid electric and fuel cell...

  16. Optical Determination of Gate--Tunable Bandgap in Bilayer Graphene

    E-Print Network [OSTI]

    Zhang, Yuanbo

    2010-01-01

    Tunable Bandgap in Bilayer Graphene Yuanbo Zhang* 1 , Tsung-gate-tunable bandgap in graphene bilayers with magnitude asbands. In two- dimensional graphene bilayers this bandgap

  17. Fast gates for ion traps by splitting laser pulses

    E-Print Network [OSTI]

    C. D. B. Bentley; A. R. R. Carvalho; D. Kielpinski; J. J. Hope

    2013-04-09

    We present a fast phase gate scheme that is experimentally achievable and has an operation time more than two orders of magnitude faster than current experimental schemes for low numbers of pulses. The gate time improves with the number of pulses following an inverse power law. Unlike implemented schemes which excite precise motional sidebands, thus limiting the gate timescale, our scheme excites multiple motional states using discrete ultra-fast pulses. We use beam-splitters to divide pulses into smaller components to overcome limitations due to the finite laser pulse repetition rate. This provides gate times faster than proposed theoretical schemes when we optimise a practical setup.

  18. Gating-by-tilt of mechanosensitive membrane channels

    E-Print Network [OSTI]

    Matthew S. Turner; Pierre Sens

    2003-11-25

    We propose an alternative mechanism for the gating of biological membrane channels in response to membrane tension that involves a change in the slope of the membrane near the channel. Under biological membrane tensions we show that the energy difference between the closed (tilted) and open (untilted) states can far exceed kBT and is comparable to what is available under simple ilational gating. Recent experiments demonstrate that membrane leaflet asymmetries (spontaneous curvature) can strong effect the gating of some channels. Such a phenomenon would be more easy to explain under gating-by-tilt, given its novel intrinsic sensitivity to such asymmetry.

  19. The Difficulty of Gate Control in Molecular Transistors

    E-Print Network [OSTI]

    D. Hou; J. H. Wei

    2011-09-27

    The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi energy they can be linearly shifted by the gate voltage, which is consistent with recent experimental observations [Nature 462, 1039 (2009)]. However, when they move near to the Fermi energy (turn-on process), the shifts become extremely small and almost independent of the gate voltage. The fact that the conductance may be beyond the gate control in the "ON" state will challenge the implementation of molecular transistors.

  20. Penn State DOE Graduate Automotive Technology Education (Gate...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Penn State DOE Graduate Automotive Technology Education (Gate) Program for In-Vehicle, High-Power Energy Storage Systems Penn State DOE Graduate Automotive Technology Education...

  1. PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational...

    Energy Savers [EERE]

    PIA - Savannah River Nuclear Solution (SRNS) MedGate Occupational Health and Safety Medical System (OHS) (Includes the Drug and Alcohol Testing System (Assistant)) PIA - Savannah...

  2. Domain Transformation Problems in 2-D Oxidation Pavlin B. Entchev

    E-Print Network [OSTI]

    algorithms for simulating two dimensional oxide layer formation at an internal wedge tip. Two numerical algorithms for computing oxide layer growth are presented. The first algorithm is based on transforming of oxidation it is possible for titanium to diffuse through the oxide layer. However, the physical nature

  3. Speed control system for an access gate

    DOE Patents [OSTI]

    Bzorgi, Fariborz M. (Knoxville, TN)

    2012-03-20

    An access control apparatus for an access gate. The access gate typically has a rotator that is configured to rotate around a rotator axis at a first variable speed in a forward direction. The access control apparatus may include a transmission that typically has an input element that is operatively connected to the rotator. The input element is generally configured to rotate at an input speed that is proportional to the first variable speed. The transmission typically also has an output element that has an output speed that is higher than the input speed. The input element and the output element may rotate around a common transmission axis. A retardation mechanism may be employed. The retardation mechanism is typically configured to rotate around a retardation mechanism axis. Generally the retardation mechanism is operatively connected to the output element of the transmission and is configured to retard motion of the access gate in the forward direction when the first variable speed is above a control-limit speed. In many embodiments the transmission axis and the retardation mechanism axis are substantially co-axial. Some embodiments include a freewheel/catch mechanism that has an input connection that is operatively connected to the rotator. The input connection may be configured to engage an output connection when the rotator is rotated at the first variable speed in a forward direction and configured for substantially unrestricted rotation when the rotator is rotated in a reverse direction opposite the forward direction. The input element of the transmission is typically operatively connected to the output connection of the freewheel/catch mechanism.

  4. Optimizing local protocols implementing nonlocal quantum gates

    E-Print Network [OSTI]

    Scott M. Cohen

    2010-02-02

    We present a method of optimizing recently designed protocols for implementing an arbitrary nonlocal unitary gate acting on a bipartite system. These protocols use only local operations and classical communication with the assistance of entanglement, and are deterministic while also being "one-shot", in that they use only one copy of an entangled resource state. The optimization is in the sense of minimizing the amount of entanglement used, and it is often the case that less entanglement is needed than with an alternative protocol using two-way teleportation.

  5. Start | Author Index 742-3 Rates and Mechanisms of Arsenite Oxidation by Nano-Mn(IV) Oxide Mineral Phases.

    E-Print Network [OSTI]

    Sparks, Donald L.

    Start | Author Index 742-3 Rates and Mechanisms of Arsenite Oxidation by Nano-Mn(IV) Oxide Mineral is thought to generally occur through either biologically or mineral-surface mediated Mn(II) oxidation. These two oxidation pathways result in the formation of nanometer-size Mn(IV) minerals. Compared

  6. Dirac point and transconductance of top-gated graphene field-effect transistors operating at elevated temperature

    SciTech Connect (OSTI)

    Hopf, T.; Vassilevski, K. V., E-mail: k.vasilevskiy@ncl.ac.uk; Escobedo-Cousin, E.; King, P. J.; Wright, N. G.; O'Neill, A. G.; Horsfall, A. B.; Goss, J. P. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Wells, G. H.; Hunt, M. R. C. [Department of Physics, Durham University, Durham DH1 3LE (United Kingdom)

    2014-10-21

    Top-gated graphene field-effect transistors (GFETs) have been fabricated using bilayer epitaxial graphene grown on the Si-face of 4H-SiC substrates by thermal decomposition of silicon carbide in high vacuum. Graphene films were characterized by Raman spectroscopy, Atomic Force Microscopy, Scanning Tunnelling Microscopy, and Hall measurements to estimate graphene thickness, morphology, and charge transport properties. A 27?nm thick Al?O? gate dielectric was grown by atomic layer deposition with an e-beam evaporated Al seed layer. Electrical characterization of the GFETs has been performed at operating temperatures up to 100?°C limited by deterioration of the gate dielectric performance at higher temperatures. Devices displayed stable operation with the gate oxide dielectric strength exceeding 4.5 MV/cm at 100?°C. Significant shifting of the charge neutrality point and an increase of the peak transconductance were observed in the GFETs as the operating temperature was elevated from room temperature to 100?°C.

  7. CO oxidation on gold-supported iron oxides: New insights into strong oxide–metal interactions

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Yu, Liang; Liu, Yun; Yang, Fan; Evans, Jaime; Rodriguez, José A.; Liu, Ping

    2015-07-14

    Very active FeOx–Au catalysts for CO oxidation are obtained after depositing nanoparticles of FeO, Fe3O4, and Fe2O3 on a Au(111) substrate. Neither FeO nor Fe2O3 is stable under the reaction conditions. Under an environment of CO/O2, they undergo oxidation (FeO) or reduction (Fe2O3) to yield nanoparticles of Fe3O4 that are not formed in a bulk phase. Using a combined experimental and theoretical approach, we show a strong oxide–metal interaction (SOMI) between Fe3O4 nanostructures and Au(111), which gives the oxide special properties, allows the formation of an active phase, and provides a unique interface to facilitate a catalytic reaction. This workmore »highlights the important role that the SOMI can play in enhancing the catalytic performance of the oxide component in metal–oxide catalysts.« less

  8. Poly-Si?â??xGex Film Growth for Ni Germanosilicided Metal Gate

    E-Print Network [OSTI]

    Yu, Hongpeng

    Scaling down of the CMOS technology requires thinner gate dielectric to maintain high performance. However, due to the depletion of poly-Si gate, it is difficult to reduce the gate thickness further especially for sub-65 ...

  9. Modeling gated neutron images of THD capsules

    SciTech Connect (OSTI)

    Wilson, Douglas Carl; Grim, Gary P; Tregillis, Ian L; Wilke, Mark D; Morgan, George L; Loomis, Eric N; Wilde, Carl H; Oertel, John A; Fatherley, Valerie E; Clark, David D; Schmitt, Mark J; Merrill, Frank E; Wang, Tai - Sen F; Danly, Christopher R; Batha, Steven H; Patel, M; Sepke, S; Hatarik, R; Fittinghoff, D; Bower, D; Marinak, M; Munro, D; Moran, M; Hilko, R; Frank, M; Buckles, R

    2010-01-01

    Time gating a neutron detector 28m from a NIF implosion can produce images at different energies. The brighter image near 14 MeV reflects the size and symmetry of the capsule 'hot spot'. Scattered neutrons, {approx}9.5-13 MeV, reflect the size and symmetry of colder, denser fuel, but with only {approx}1-7% of the neutrons. The gated detector records both the scattered neutron image, and, to a good approximation, an attenuated copy of the primary image left by scintillator decay. By modeling the imaging system the energy band for the scattered neutron image (10-12 MeV) can be chosen, trading off the decayed primary image and the decrease of scattered image brightness with energy. Modeling light decay from EJ399, BC422, BCF99-55, Xylene, DPAC-30, and Liquid A leads to a preference from BCF99-55 for the first NIF detector, but DPAC 30 and Liquid A would be preferred if incorporated into a system. Measurement of the delayed light from the NIF scintillator using implosions at the Omega laser shows BCF99-55 to be a good choice for down-scattered imaging at 28m.

  10. Plasma-enhanced atomic layer deposition and etching of high-k gadolinium oxide

    SciTech Connect (OSTI)

    Vitale, Steven A.; Wyatt, Peter W.; Hodson, Chris J.

    2012-01-15

    Atomic layer deposition (ALD) of high-quality gadolinium oxide thin films is achieved using Gd(iPrCp){sub 3} and O{sub 2} plasma. Gd{sub 2}O{sub 3} growth is observed from 150 to 350 deg. C, though the optical properties of the film improve at higher temperature. True layer-by-layer ALD growth of Gd{sub 2}O{sub 3} occurred in a relatively narrow window of temperature and precursor dose. A saturated growth rate of 1.4 A/cycle was observed at 250 deg. C. As the temperature increases, high-quality films are deposited, but the growth mechanism appears to become CVD-like, indicating the onset of precursor decomposition. At 250 deg. C, the refractive index of the film is stable at {approx}1.80 regardless of other deposition conditions, and the measured dispersion characteristics are comparable to those of bulk Gd{sub 2}O{sub 3}. XPS data show that the O/Gd ratio is oxygen deficient at 1.3, and that it is also very hygroscopic. The plasma etching rate of the ALD Gd{sub 2}O{sub 3} film in a high-density helicon reactor is very low. Little difference is observed in etching rate between Cl{sub 2} and pure Ar plasmas, suggesting that physical sputtering dominates the etching. A threshold bias power exists below which etching does not occur; thus it may be possible to etch a metal gate material and stop easily on the Gd{sub 2}O{sub 3} gate dielectric. The Gd{sub 2}O{sub 3} film has a dielectric constant of about 16, exhibits low C-V hysteresis, and allows a 50 x reduction in gate leakage compared to SiO{sub 2}. However, the plasma enhanced atomic layer deposition (PE-ALD) process causes formation of an {approx}1.8 nm SiO{sub 2} interfacial layer, and generates a fixed charge of -1.21 x 10{sup 12} cm{sup -2}, both of which may limit use of PE-ALD Gd{sub 2}O{sub 3} as a gate dielectric.

  11. University of Illinois at Urbana-Champaigns GATE Center for...

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion Engines University of Illinois at Urbana-Champaigns GATE Center for Advanced Automotive Bio-Fuel Combustion...

  12. US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing

    E-Print Network [OSTI]

    Lee, Dongwon

    US DOE Sponsored Graduate Automotive Technology Education (GATE) Program at Penn State Emphasizing in the automotive industry and academia. Develop relationships between GATE students, faculty, employers

  13. New SRAM Cell Design for Low Power and High Reliability using 32nm Independent Gate FinFET Technology

    E-Print Network [OSTI]

    Ayers, Joseph

    gate voltage (VGb). This is similar to the body effect in a bulk transistor. An independent-gate Fin

  14. Demonstration of Robust Quantum Gate Tomography via Randomized Benchmarking

    E-Print Network [OSTI]

    Blake R. Johnson; Marcus P. da Silva; Colm A. Ryan; Shelby Kimmel; Jerry M. Chow; Thomas A. Ohki

    2015-05-25

    Typical quantum gate tomography protocols struggle with a self-consistency problem: the gate operation cannot be reconstructed without knowledge of the initial state and final measurement, but such knowledge cannot be obtained without well-characterized gates. A recently proposed technique, known as randomized benchmarking tomography (RBT), sidesteps this self-consistency problem by designing experiments to be insensitive to preparation and measurement imperfections. We implement this proposal in a superconducting qubit system, using a number of experimental improvements including implementing each of the elements of the Clifford group in single `atomic' pulses and custom control hardware to enable large overhead protocols. We show a robust reconstruction of several single-qubit quantum gates, including a unitary outside the Clifford group. We demonstrate that RBT yields physical gate reconstructions that are consistent with fidelities obtained by randomized benchmarking.

  15. Parallel transport quantum logic gates with trapped ions

    E-Print Network [OSTI]

    de Clercq, Ludwig; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

    2015-01-01

    Quantum information processing will require combinations of gate operations and communication, with each applied in parallel to large numbers of quantum systems. These tasks are often performed sequentially, with gates implemented by pulsed fields and information transported either by moving the physical qubits or using photonic links. For trapped ions, an alternative approach is to implement quantum logic gates by transporting the ions through static laser beams, combining qubit operations with transport. This has significant advantages for scalability since the voltage waveforms required for transport can potentially be generated using micro-electronics integrated into the trap structure itself, while both optical and microwave control elements are significantly more bulky. Using a multi-zone ion trap, we demonstrate transport gates on a qubit encoded in the hyperfine structure of a beryllium ion. We show the ability to perform sequences of operations, and to perform parallel gates on two ions transported t...

  16. Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics

    SciTech Connect (OSTI)

    Ha, Tae-Jun

    2014-10-15

    We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (V{sub th}). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (?3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger V{sub th} shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.

  17. Screening of remote charge scattering sites from the oxide/silicon interface of strained Si two-dimensional electron gases by an intermediate tunable shielding electron layer

    SciTech Connect (OSTI)

    Huang, Chiao-Ti, E-mail: chiaoti@princeton.edu; Li, Jiun-Yun; Chou, Kevin S.; Sturm, James C. [Department of Electrical Engineering, Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey 08544 (United States)

    2014-06-16

    We report the strong screening of the remote charge scattering sites from the oxide/semiconductor interface of buried enhancement-mode undoped Si two-dimensional electron gases (2DEGs), by introducing a tunable shielding electron layer between the 2DEG and the scattering sites. When a high density of electrons in the buried silicon quantum well exists, the tunneling of electrons from the buried layer to the surface quantum well can lead to the formation of a nearly immobile surface electron layer. The screening of the remote charges at the interface by this newly formed surface electron layer results in an increase in the mobility of the buried 2DEG. Furthermore, a significant decrease in the minimum mobile electron density of the 2DEG occurs as well. Together, these effects can reduce the increased detrimental effect of interface charges as the setback distance for the 2DEG to the surface is reduced for improved lateral confinement by top gates.

  18. Graphene terahertz modulators by ionic liquid gating

    E-Print Network [OSTI]

    Wu, Yang; Qiu, Xuepeng; Liu, Jingbo; Deorani, Praveen; Banerjee, Karan; Son, Jaesung; Chen, Yuanfu; Chia, Elbert E M; Yang, Hyunsoo

    2015-01-01

    Graphene based THz modulators are promising due to the conical band structure and high carrier mobility of graphene. Here, we tune the Fermi level of graphene via electrical gating with the help of ionic liquid to control the THz transmittance. It is found that, in the THz range, both the absorbance and reflectance of the device increase proportionately to the available density of states due to intraband transitions. Compact, stable, and repeatable THz transmittance modulation up to 93% (or 99%) for a single (or stacked) device has been demonstrated in a broad frequency range from 0.1 to 2.5 THz, with an applied voltage of only 3 V at room temperature.

  19. Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

    SciTech Connect (OSTI)

    Yuan, Hui E-mail: qli6@gmu.edu; Li, Haitao; Zhu, Hao; Zhang, Kai; Baumgart, Helmut; Bonevich, John E.; Richter, Curt A.; Li, Qiliang E-mail: qli6@gmu.edu

    2014-12-08

    Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33?eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

  20. Gated Si nanowires for large thermoelectric power factors

    SciTech Connect (OSTI)

    Neophytou, Neophytos, E-mail: N.Neophytou@warwick.ac.uk [School of Engineering, University of Warwick, Coventry CV4 7AL (United Kingdom); Kosina, Hans [Institute for Microelectronics, Vienna University of Technology, Gusshausstrasse 27-29/E360, Vienna A-1040 (Austria)

    2014-08-18

    We investigate the effect of electrostatic gating on the thermoelectric power factor of p-type Si nanowires (NWs) of up to 20?nm in diameter in the [100], [110], and [111] crystallographic transport orientations. We use atomistic tight-binding simulations for the calculation of the NW electronic structure, coupled to linearized Boltzmann transport equation for the calculation of the thermoelectric coefficients. We show that gated NW structures can provide ?5× larger thermoelectric power factor compared to doped channels, attributed to their high hole phonon-limited mobility, as well as gating induced bandstructure modifications which further improve mobility. Despite the fact that gating shifts the charge carriers near the NW surface, surface roughness scattering is not strong enough to degrade the transport properties of the accumulated hole layer. The highest power factor is achieved for the [111] NW, followed by the [110], and finally by the [100] NW. As the NW diameter increases, the advantage of the gated channel is reduced. We show, however, that even at 20?nm diameters (the largest ones that we were able to simulate), a ?3× higher power factor for gated channels is observed. Our simulations suggest that the advantage of gating could still be present in NWs with diameters of up to ?40?nm.

  1. Variability-Aware Design of Double Gate FinFET-based Current Mirrors

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    = front gate voltage, Vgb= back gate voltage. In the SG mode, the front and back gates are tied together and the back-gate voltage (Vgb) is set to 0 V. The low-power (LP)-mode applies a reverse-bias voltage of -0.2V

  2. Micro-mechanical logic for field produceable gate arrays

    E-Print Network [OSTI]

    Prakash, Manu

    2005-01-01

    A paradigm of micro-mechanical gates for field produceable logic is explored. A desktop manufacturing system is sought after which is capable of printing functional logic devices in the field. A logic scheme which induces ...

  3. Constructing two-qubit gates with minimal couplings

    E-Print Network [OSTI]

    Yuan, Haidong

    Couplings between quantum systems are frequently less robust and harder to implement than controls on individual systems; thus, constructing quantum gates with minimal interactions is an important problem in quantum ...

  4. Gate-Level Characterization: Foundations and Hardware Security Applications

    E-Print Network [OSTI]

    Potkonjak, Miodrag

    Security Keywords Gate-level characterization, thermal conditioning, hardware Trojan horse, manufacturing leakage energy, ever increasing sub- strate noise, profound and intrinsic manufacturing variabil- ity (MV rights management. However, GLC is challenging due to the existence of manufacturing variability (MV

  5. Quantum optical interface for gate-controlled spintronic devices

    E-Print Network [OSTI]

    Hans-Andreas Engel; Jacob M. Taylor; Mikhail D. Lukin; Atac Imamoglu

    2006-12-29

    We describe an opto-electronic structure in which charge and spin degrees of freedom in electrical gate-defined quantum dots can be coherently coupled to light. This is achieved via electron-electron interaction or via electron tunneling into a proximal self-assembled quantum dot. We illustrate potential applications of this approach by considering several quantum control techniques, including optical read-out of gate-controlled semiconductor quantum bits and controlled generation of entangled photon-spin pairs.

  6. Electrical behavior of atomic layer deposited high quality SiO{sub 2} gate dielectric

    SciTech Connect (OSTI)

    Pradhan, Sangram K.; Tanyi, Ekembu K.; Skuza, Jonathan R.; Xiao, Bo; Pradhan, Aswini K., E-mail: apradhan@nsu.edu [Center for Materials Research, Norfolk State University, 700 Park Ave., Norfolk, Virginia 23504 (United States)

    2015-01-01

    Comprehensive and systematic electrical studies were performed on fabrication of high quality SiO{sub 2} thin films MOS capacitor using the robust, novel, and simple atomic layer deposition (ALD) technique using highly reactive ozone and tris (dimethylamino) silane (TDMAS) precursors. Ideal capacitance–voltage curve exhibits a very small frequency dispersion and hysteresis behavior of the SiO{sub 2} MOS capacitor grown at 1?s TDMAS pulse, suggesting excellent interfacial quality and purity of the film as probed using x-ray photoelectron studies. The flat-band voltage of the device shifted from negative toward positive voltage axis with increase of TDMAS pulses from 0.2 to 2 s. Based on an equivalent oxide thickness point of view, all SiO{sub 2} films have gate leakage current density of (5.18?×?10{sup ?8} A/cm{sup 2}) as well as high dielectric break down fields of more than (?10 MV/cm), which is better and comparable to that of thermally grown SiO{sub 2} at temperatures above 800?°C. These appealing electrical properties of ALD grown SiO{sub 2} thin films enable its potential applications such as high-quality gate insulators for thin film MOS transistors, as well as insulators for sensor and nanostructures on nonsilicon substrates.

  7. Optimal Control Theory for Continuous Variable Quantum Gates

    E-Print Network [OSTI]

    Rebing Wu; Raj Chakrabarti; Herschel Rabitz

    2007-08-16

    We apply the methodology of optimal control theory to the problem of implementing quantum gates in continuous variable systems with quadratic Hamiltonians. We demonstrate that it is possible to define a fidelity measure for continuous variable (CV) gate optimization that is devoid of traps, such that the search for optimal control fields using local algorithms will not be hindered. The optimal control of several quantum computing gates, as well as that of algorithms composed of these primitives, is investigated using several typical physical models and compared for discrete and continuous quantum systems. Numerical simulations indicate that the optimization of generic CV quantum gates is inherently more expensive than that of generic discrete variable quantum gates, and that the exact-time controllability of CV systems plays an important role in determining the maximum achievable gate fidelity. The resulting optimal control fields typically display more complicated Fourier spectra that suggest a richer variety of possible control mechanisms. Moreover, the ability to control interactions between qunits is important for delimiting the total control fluence. The comparative ability of current experimental protocols to implement such time-dependent controls may help determine which physical incarnations of CV quantum information processing will be the easiest to implement with optimal fidelity.

  8. Filter design for hybrid spin gates

    E-Print Network [OSTI]

    Andreas Albrecht; Martin B. Plenio

    2015-04-14

    The impact of control sequences on the environmental coupling of a quantum system can be described in terms of a filter. Here we analyze how the coherent evolution of two interacting spins subject to periodic control pulses, at the example of a nitrogen vacancy center coupled to a nuclear spin, can be described in the filter framework in both the weak and the strong coupling limit. A universal functional dependence around the filter resonances then allows for tuning the coupling type and strength. Originally limited to small rotation angles, we show how the validity range of the filter description can be extended to the long time limit by time-sliced evolution sequences. Based on that insight, the construction of tunable, noise decoupled, conditional gates composed of alternating pulse sequences is proposed. In particular such an approach can lead to a significant improvement in fidelity as compared to a strictly periodic control sequence. Moreover we analyze the decoherence impact, the relation to the filter for classical noise known from dynamical decoupling sequences, and we outline how an alternating sequence can improve spin sensing protocols.

  9. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, X.

    1996-12-17

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

  10. Gated integrator with signal baseline subtraction

    DOE Patents [OSTI]

    Wang, Xucheng (Lisle, IL)

    1996-01-01

    An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

  11. Impulse radar with swept range gate

    DOE Patents [OSTI]

    McEwan, T.E.

    1998-09-08

    A radar range finder and hidden object locator is based on ultra-wide band radar with a high resolution swept range gate. The device generates an equivalent time amplitude scan with a typical range of 4 inches to 20 feet, and an analog range resolution as limited by a jitter of on the order of 0.01 inches. A differential sampling receiver is employed to effectively eliminate ringing and other aberrations induced in the receiver by the near proximity of the transmit antenna, so a background subtraction is not needed, simplifying the circuitry while improving performance. Techniques are used to reduce clutter in the receive signal, such as decoupling the receive and transmit cavities by placing a space between them, using conductive or radiative damping elements on the cavities, and using terminating plates on the sides of the openings. The antennas can be arranged in a side-by-side parallel spaced apart configuration or in a coplanar opposed configuration which significantly reduces main bang coupling. 25 figs.

  12. The gated community: residents' crime experience and perception of safety behind gates and fences in the urban area 

    E-Print Network [OSTI]

    Kim, Suk Kyung

    2006-10-30

    The primary purpose of the study is to explore the connections between residents' perception of safety and their crime experience, and the existence of gates and fences in multi-family housing communities in urban areas. ...

  13. Kinetic study of the oxidation of n-butane on vanadium oxide supported on Al/Mg mixed oxide

    SciTech Connect (OSTI)

    Dejoz, A.; Vazquez, I.; Nieto, J.M.L.; Melo, F.

    1997-07-01

    The reaction kinetics of the oxidative dehydrogenation (ODH) of n-butane over vanadia supported on a heat-treated Mg/Al hydrotalcite (37.3 wt % of V{sub 2}O{sub 5}) was investigated by both linear and nonlinear regression techniques. A reaction network including the formation of butenes (1-, 2-cis-, and 2-trans-butene), butadiene, and carbon oxides by parallel and consecutive reactions, at low and high n-butane conversions, has been proposed. Langmuir-Hinshelwood (LH) models can be used as suitable models which allows reproduction of the global kinetic behavior, although differences between oxydehydrogenation and deep oxidation reactions have been observed. Thus, the formation of oxydehydrogenation products can be described by a LH equation considering a dissociative adsorption of oxygen while the formation of carbon oxides is described by a LH equation with a nondissociative adsorption of oxygen. Two different mechanisms operate on the catalyst: (i) a redox mechanism responsible of the formation of olefins and diolefins and associated to vanadium species, which is initiated by a hydrogen abstraction; (ii) a radical mechanism responsible of the formation of carbon oxides from n-butane and butenes and associated to vanadium-free sites of the support. On the other hand, the selectivity to oxydehydrogenation products increases with the reaction temperature. This catalytic performance can be explained taking into account the low reducibility of V{sup 5+}-sites and the higher apparent activation energies of the oxydehydrogenation reactions with respect to deep oxidation reactions.

  14. Catalytic Oxidation Hot Paper DOI: 10.1002/anie.201400134

    E-Print Network [OSTI]

    Zare, Richard N.

    Catalytic Oxidation Hot Paper DOI: 10.1002/anie.201400134 Trinuclear Pd3O2 Intermediate in Aerobic* Abstract: The activation of O2 is a key step in selective catalytic aerobic oxidation reactions mediated aerobic oxidation of alcohols. The formation and catalytic activity of the trinuclear Pd3O2 species

  15. Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J. Liu*, A. Ramirez**, D. L. Kwong*, D. Wristers**, A. Ritenour#

    E-Print Network [OSTI]

    Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J, we report for the first time Ge MOS characteristics with ultra thin rapid thermal CVD HfO2 gate dielectrics and TaN gate electrode. Using the newly developed pre- gate cleaning and NH3-based Ge surface

  16. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    SciTech Connect (OSTI)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-11-14

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis.

  17. A laser-programmable gate array 

    E-Print Network [OSTI]

    Gullette, James Benjamin

    1985-01-01

    process with double layer polysilicon, typicaHy used for capacitors, and single layer metal. The laser techniques used to program the devices were the interconnection of the over- lapping polysilicon layers and the cutting of metal and polysilicon links... Array The VLSI program at Texas A&M University was provided with a standard double-poly N-channel Metal Oxide Semiconductor (NMOS) process. It has been found that certain laser personalization techniques for creating and deleting con- nections...

  18. Ethane Oxidative Dehydrogenation Pathways on Vanadium Oxide Catalysts Morris D. Argyle, Kaidong Chen, Alexis T. Bell,* and Enrique Iglesia*

    E-Print Network [OSTI]

    Iglesia, Enrique

    Ethane Oxidative Dehydrogenation Pathways on Vanadium Oxide Catalysts Morris D. Argyle, Kaidong to determine the identity and reversibility of elementary steps involved in ethane oxidative dehydrogenation concurrent formation of C2H6-xDx or C2H4-xDx isotopomers, suggesting that C-H bond cleavage in ethane

  19. Direct-Coupling O? Bond Forming Pathway in Cobalt Oxide Water Oxidation Catalysts

    E-Print Network [OSTI]

    Wang, Lee-Ping

    We report a catalytic mechanism for water oxidation in a cobalt oxide cubane model compound, in which the crucial O–O bond formation step takes place by direct coupling between two CoIV(O) metal oxo groups. Our results are ...

  20. Oxidation catalyst

    DOE Patents [OSTI]

    Ceyer, Sylvia T. (Cambridge, MA); Lahr, David L. (Cambridge, MA)

    2010-11-09

    The present invention generally relates to catalyst systems and methods for oxidation of carbon monoxide. The invention involves catalyst compositions which may be advantageously altered by, for example, modification of the catalyst surface to enhance catalyst performance. Catalyst systems of the present invention may be capable of performing the oxidation of carbon monoxide at relatively lower temperatures (e.g., 200 K and below) and at relatively higher reaction rates than known catalysts. Additionally, catalyst systems disclosed herein may be substantially lower in cost than current commercial catalysts. Such catalyst systems may be useful in, for example, catalytic converters, fuel cells, sensors, and the like.

  1. Deterministic and cascadable conditional phase gate for photonic qubits

    SciTech Connect (OSTI)

    Chudzicki, Christopher; Chuang, Isaac; Shapiro, Jeffrey H.

    2014-12-04

    Previous analyses of conditional ?{sub NL}-phase gates for photonic qubits that treat crossphase modulation (XPM) in a causal, multimode, quantum field setting suggest that a large (?? rad) nonlinear phase shift is always accompanied by fidelity-degrading noise [J. H. Shapiro, Phys. Rev. A 73, 062305 (2006); J. Gea-Banacloche, Phys. Rev. A 81, 043823 (2010)]. Using an atomic V-system to model an XPM medium, we present a conditional phase gate that, for sufficiently small nonzero ?{sub NL}, has high fidelity. The gate is made cascadable by using a special measurement, principal mode projection, to exploit the quantum Zeno effect and preclude the accumulation of fidelity-degrading departures from the principal-mode Hilbert space when both control and target photons illuminate the gate. The nonlinearity of the V-system we study is too weak for this particular implementation to be practical. Nevertheless, the idea of cascading through principal mode projection is of potential use to overcome fidelity degrading noise for a wide variety of nonlinear optical primitive gates.

  2. Decoherence and gate performance of coupled solid state qubits

    E-Print Network [OSTI]

    Markus J. Storcz; Frank K. Wilhelm

    2002-12-16

    Solid state quantum bits are promising candidates for the realization of a {\\em scalable} quantum computer. However, they are usually strongly limited by decoherence due to the many extra degrees of freedom of a solid state system. We investigate a system of two solid state qubits that are coupled via $\\sigma_z^{(i)} \\otimes \\sigma_z^{(j)}$ type of coupling. This kind of setup is typical for {\\em pseudospin} solid-state quantum bits such as charge or flux systems. We evaluate decoherence properties and gate quality factors in the presence of a common and two uncorrelated baths coupling to $\\sigma_z$, respectively. We show that at low temperatures, uncorrelated baths do degrade the gate quality more severely. In particular, we show that in the case of a common bath, optimum gate performance of a CPHASE gate can be reached at very low temperatures, because our type of coupling commutes with the coupling to the decoherence, which makes this type of coupling attractive as compared to previously studied proposals with $\\sigma_y^{(i)} \\otimes \\sigma_y^{(j)}$ -coupling. Although less pronounced, this advantage also applies to the CNOT gate.

  3. An optical fusion gate for W-states

    E-Print Network [OSTI]

    Sahin Kaya Ozdemir; Eiji Matsunaga; Toshiyuki Tashima; Takashi Yamamoto; Masato Koashi; Nobuyuki Imoto

    2011-03-11

    We introduce a simple optical gate to fuse arbitrary size polarization entangled W-states to prepare larger W-states. The gate requires a polarizing beam splitter (PBS), a half wave plate (HWP) and two photon detectors. We study numerically and analytically the necessary resource consumption for preparing larger W-states by fusing smaller ones with the proposed fusion gate. We show analytically that resource requirement scales at most sub-exponentially with the increasing size of the state to be prepared. We numerically determine the resource cost for fusion without recycling where W-states of arbitrary size can be optimally prepared. Moreover, we introduce another strategy which is based on recycling and outperforms the optimal strategy for non-recycling case.

  4. Field-induced cation migration in Cu oxide films by in situ scanning tunneling microscopy

    E-Print Network [OSTI]

    Wang, Gwo-Ching

    into the oxide, and Al cations in the oxide layer rapidly diffused away.14 Field-induced ion migration substrate was cleaned by the RCA method and a thin oxide layer was grown on the Si surface. The Cu film. The formation of an oxide layer on Cu thin film was examined by x-ray photoelectron spectroscopy XPS in another

  5. Origin of complex impact craters on native oxide coated silicon surfaces Juha Samela* and Kai Nordlund

    E-Print Network [OSTI]

    Nordlund, Kai

    silicon oxide layer than on targets without the oxide layer. To explain the formation of these complex. The diameter of the simulated hillock structures in the silicon oxide layer is in agreement shows that the largest lateral momentum is induced in the silicon oxide layer during the impact; thus

  6. Fabrication of a gated gallium arsenide heterostructure resonant tunneling diode 

    E-Print Network [OSTI]

    Kinard, William Brian

    1989-01-01

    , . ' 'CONTACT PAD' PLANAR I ZED POLYAM I DE RECTIFYI CONTACT N DBHS Pig. 2. f'utavvay vieiv of a gated gallium arsenide heterostructure resonant tunneling diode 1018 graded from 10 18 io" 10? (lightly doped) units=cm 8 ?graded from 10 to 18...FABRICATION OF A GATED GALLIL". tl ARSEXIDE HETEROSTRL CTL RF. RESONANT TF'XXELI'XG DIODE A Thesis bt ttrILLIAAI BRIA'. s KI'iARD Subnut ted to the Office of Graduate Studies of Texas AE;M Eniverstty tn partial fulfillment of the requirements...

  7. Self-aligned submicron gate length gallium arsenide MESFET 

    E-Print Network [OSTI]

    Huang, Hsien-Ching

    1987-01-01

    38 21. Proximity cap annealing . 22. Temperature profile of post implant anneal 46 47 23. 24. 25. 26. 27. 28. 29. 30. "Pits" or holes in GaAs post implant anneal without sacrificial cap Silicon monoxide source (bafile box) used.... 16(b)). The bottom resist layer is then further etched in the oxygen plasma to produce undercutting for the desire gate structure. The amount of undercut is determined by the desired length of the gate and is the width of the remaining resist...

  8. Isolated-attosecond-pulse generation with infrared double optical gating

    SciTech Connect (OSTI)

    Lan Pengfei; Takahashi, Eiji J.; Midorikawa, Katsumi [Extreme Photonics Research Group, RIKEN Advanced Science Institute, 2-1 Hirosawa, Wako, Saitama 351-0198 (Japan)

    2011-06-15

    We propose and theoretically demonstrate an infrared two-color polarization gating scheme for generating an intense isolated attosecond pulse (IAP) in the multicycle regime. Our simulations show that an IAP can be produced using a multicycle two-color driving pulse with a duration up to 60 fs. Moreover, the carrier-envelope phase (CEP) of the driving laser is not required to be stabilized, although the IAP intensity changes with the CEP slip. Such a gating scheme significantly relaxes the requirements for driving lasers and opens the door to easily create intense IAPs with a high-power conventional multicycle laser pulse.

  9. Formation of nano-crystalline todorokite from biogenic Mn Xiong Han Feng a,1

    E-Print Network [OSTI]

    Sparks, Donald L.

    Formation of nano-crystalline todorokite from biogenic Mn oxides Xiong Han Feng a,1 , Mengqiang Zhu oxides in the environment. Additionally this method may be a viable biosynthesis route for porous, nano-crystalline

  10. Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

    E-Print Network [OSTI]

    Hashemi, Pouya

    2010-01-01

    Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture ...

  11. Quantum entanglement and controlled logical gates using coupled SQUID flux qubits

    E-Print Network [OSTI]

    Zhou, Zhongyuan; Han, Siyuan; Chu, Shih-I

    2005-06-01

    We present an approach to realize universal two-bit quantum gates using two SQUID flux qubits. In this approach the basic unit consists of two inductively coupled SQUIDs with realistic device parameters. Quantum logical gates are implemented...

  12. The civic forum in ancient Israel : the form, function, and symbolism of city gates

    E-Print Network [OSTI]

    Frese, Daniel Allan

    2012-01-01

    from the massive amounts of wood ash and burnt ceiling beamsand the presence of wood ash in some gate passages,

  13. Chemical Wave Logic Gates Oliver Steinbock, Petteri Kettunen, and Kenneth Showalter*

    E-Print Network [OSTI]

    Showalter, Kenneth

    Chemical Wave Logic Gates Oliver Steinbock, Petteri Kettunen, and Kenneth Showalter* Department Form: August 6, 1996X Logic gates based on chemical wave propagation in geometrically constrained. Computational studies of the serial coupling of elements to form multicomponent gates and general chemical wave

  14. PHYSICAL REVIEW B 90, 144504 (2014) Compressed sensing quantum process tomography for superconducting quantum gates

    E-Print Network [OSTI]

    Martinis, John M.

    2014-01-01

    for superconducting quantum gates Andrey V. Rodionov,1 Andrzej Veitia,1 R. Barends,2 J. Kelly,2 Daniel Sank,2 J quantum gates based on superconducting Xmon and phase qubits. Using experimental data for a two and Monte Carlo process certification have been demonstrated experimentally for superconducting qubit gates

  15. PHYSICAL REVIEW A 87, 052306 (2013) Protected gates for superconducting qubits

    E-Print Network [OSTI]

    Preskill, John

    2013-01-01

    PHYSICAL REVIEW A 87, 052306 (2013) Protected gates for superconducting qubits Peter Brooks, Alexei the accuracy of quantum phase gates acting on "0- qubits" in superconducting circuits, where the gates superconducting circuits for this purpose. Specifically, several authors [3­5] have proposed designs

  16. Case Studies on Clock Gating and Local Routign for VLSI Clock Mesh 

    E-Print Network [OSTI]

    Ramakrishnan, Sundararajan

    2010-10-12

    . This thesis deals with the introduction of 'reconfigurability' by using control structures like transmission gates between sub-clock meshes, thus enabling clock gating in clock mesh. By using the optimum value of size for PMOS and NMOS of transmission gate...

  17. Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy

    E-Print Network [OSTI]

    Dy, Jennifer G.

    Learning Methods for Lung Tumor Markerless Gating in Image-Guided Radiotherapy Ying Cui Dept. For gated lung cancer radiotherapy, it is difficult to generate ac- curate gating signals due to the large techniques, we apply them on five sequences of fluoroscopic images from five lung cancer patients against

  18. An overview of the gate and panel industry 

    E-Print Network [OSTI]

    Fisher, C. West

    2000-01-01

    acquiring raw materials, its pre-fabrication, welding, touch-up, and delivery of the product. My first major responsibility for Texas Gate and Panel was to expand its sales territory. It soon became obvious that a thorough knowledge of my competitors...

  19. FLOATING GATE COMPARATOR WITH AUTOMATIC OFFSET MANIPULATION FUNCTIONALITY

    E-Print Network [OSTI]

    Maryland at College Park, University of

    a desired offset. We exploit the nega- tive feedback functionality of pFET hot-electron injection to achieve to this circuit node, so charge on this gate remains trapped for a very long time. In our comparator, the circuit offset is stored in this high-retention charge form, and altered by means of injection and tunneling

  20. Quantum Logic Gates in Superconducting Qubits John M. Martinis

    E-Print Network [OSTI]

    Martinis, John M.

    Quantum Logic Gates in Superconducting Qubits John M. Martinis Department of Physics University on surface codes may allow errors in the 10-2 range [2]. Much research in superconducting qubits has been di for superconducting qubits, since they typically use fixed coupling elements set by fabrication. TRANSITION LOGIC

  1. Gating and regulation of connexin 43 (Cx43) hemichannels

    E-Print Network [OSTI]

    Newman, Eric A.

    Gating and regulation of connexin 43 (Cx43) hemichannels Jorge E. Contreras* , Juan C. Sa Connexin 43 (Cx43) nonjunctional or ``unapposed'' hemichannels can open under physiological or pathological conditions. We char- acterize hemichannels comprised of Cx43 or Cx43-EGFP (Cx43 with enhanced GFP fused

  2. Clustering of cyclic-nucleotide-gated channels in olfactory cilia

    E-Print Network [OSTI]

    French, Donald A.

    Cincinnati, OH 45267-0667, USA 513-558-6099 513-558-2727 FAX steve@syrano.acb.uc.edu Running title: CNG of olfactory signal transduction, including a high density of cyclic-nucleotide-gated (CNG) channels. CNG the locations of CNG channels along the length may be important in determining the sensitivity of odor detection

  3. Three-qubit phase gate based on cavity quantum electrodynamics 

    E-Print Network [OSTI]

    Chang, Jun-Tao; Zubairy, M. Suhail

    2008-01-01

    We describe a three-qubit quantum phase gate which is implemented by passing a four-level atom in a cascade configuration initially in its ground state through a three-mode optical cavity. The three qubits are represented by the photons in the three...

  4. Optical gating of perylene bisimide fluorescence using dithienylcyclopentene photochromic switches

    SciTech Connect (OSTI)

    Pärs, Martti; Köhler, Jürgen, E-mail: juergen.koehler@uni-bayreuth.de [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany)] [Experimental Physics IV, University of Bayreuth, 95440 Bayreuth (Germany); Gräf, Katja; Bauer, Peter; Thelakkat, Mukundan [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)] [Applied Functional Polymers, University of Bayreuth, 95440 Bayreuth (Germany)

    2013-11-25

    The emission of millions of fluorescence photons from a chromophore is controlled by the absorption of a few tens of photons in a photochromic molecule. The parameters that determine the efficiency of this process are investigated, providing insights for the development of an all-optical gate.

  5. Temperature-controlled molecular depolarization gates in nuclear magnetic resonance

    SciTech Connect (OSTI)

    Schroder, Leif; Schroder, Leif; Chavez, Lana; Meldrum, Tyler; Smith, Monica; Lowery, Thomas J.; E. Wemmer, David; Pines, Alexander

    2008-02-27

    Down the drain: Cryptophane cages in combination with selective radiofrequency spin labeling can be used as molecular 'transpletor' units for transferring depletion of spin polarization from a hyperpolarized 'source' spin ensemble to a 'drain' ensemble. The flow of nuclei through the gate is adjustable by the ambient temperature, thereby enabling controlled consumption of hyperpolarization.

  6. Design, Simulation and Modeling of Insulated Gate Bipolar Transistor 

    E-Print Network [OSTI]

    Gupta, Kaustubh

    2013-07-09

    The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions...

  7. Compact floating-gate true random number generator

    E-Print Network [OSTI]

    Maryland at College Park, University of

    Compact floating-gate true random number generator P. Xu, Y.L. Wong, T.K. Horiuchi and P.A. Abshire A compact true random number generator (RNG) integrated circuit with adjustable probability is presented. Introduction: Random number generation is indispensable in crypto- graphy, scientific computing and stochastic

  8. TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid

    E-Print Network [OSTI]

    Najm, Farid N.

    TECH FORUM: [VERIFIED RTL TO GATES] Efficient RC power grid verification using node elimination proposes a novel approach to systematically reduce the power grid and accurately compute an upper bound on the voltage drops at power grid nodes that are retained. Furthermore, acriterion for the safety of nodes

  9. A Gate Level Sensor Network for Integrated Circuits Temperature Monitoring

    E-Print Network [OSTI]

    Potkonjak, Miodrag

    A Gate Level Sensor Network for Integrated Circuits Temperature Monitoring Alireza Vahdatpour, Saro and temporal) temperature monitoring allows several run-time optimizations. Protecting shared processors from, miodrag}@cs.ucla.edu Abstract-- We present the first sensor network architecture to monitor integrated

  10. Gating of high-mobility InAs metamorphic heterostructures

    SciTech Connect (OSTI)

    Shabani, J.; McFadden, A. P.; Shojaei, B.; Palmstrøm, C. J.

    2014-12-29

    We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier without an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.

  11. Thermal Activation and Quantum Field Emission in a Sketch-Based Oxide Nano Transistor

    E-Print Network [OSTI]

    Cheng Cen; Daniela Bogorin; Jeremy Levy

    2010-09-13

    We report direct measurements of the potential barriers and electronic coupling between nanowire segments within a sketch-based oxide nanotransistor (SketchFET) device. Near room temperature, switching is governed by thermally activation across a potential barrier controlled by the nanowire gate. Below T=150 K, a crossover to quantum field emission is observed that is sensitive to structural phase transitions in the SrTiO3 layer. This direct measurement of the source-drain and gate-drain energy barriers is crucial for the development of room-temperature logic and memory elements and low-temperature quantum devices.

  12. Ferroelectricity in undoped hafnium oxide

    SciTech Connect (OSTI)

    Polakowski, Patrick; Müller, Johannes

    2015-06-08

    We report the observation of ferroelectric characteristics in undoped hafnium oxide thin films in a thickness range of 4–20?nm. The undoped films were fabricated using atomic layer deposition (ALD) and embedded into titanium nitride based metal-insulator-metal (MIM) capacitors for electrical evaluation. Structural as well as electrical evidence for the appearance of a ferroelectric phase in pure hafnium oxide was collected with respect to film thickness and thermal budget applied during titanium nitride electrode formation. Using grazing incidence X-Ray diffraction (GIXRD) analysis, we observed an enhanced suppression of the monoclinic phase fraction in favor of an orthorhombic, potentially, ferroelectric phase with decreasing thickness/grain size and for a titanium nitride electrode formation below crystallization temperature. The electrical presence of ferroelectricity was confirmed using polarization measurements. A remanent polarization P{sub r} of up to 10??C?cm{sup ?2} as well as a read/write endurance of 1.6?×?10{sup 5} cycles was measured for the pure oxide. The experimental results reported here strongly support the intrinsic nature of the ferroelectric phase in hafnium oxide and expand its applicability beyond the doped systems.

  13. Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons

    DOE Patents [OSTI]

    Kung, H.H.; Chaar, M.A.

    1988-10-11

    Oxidative dehydrogenation of alkanes to unsaturated hydrocarbons is carried out over metal vanadate catalysts under oxidizing conditions. The vanadate catalysts are represented by the formulas M[sub 3](VO[sub 4])[sub 2] and MV[sub 2]O[sub 6], M representing Mg, Zn, Ca, Pb, or Cd. The reaction is carried out in the presence of oxygen, but the formation of oxygenate by-products is suppressed.

  14. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    SciTech Connect (OSTI)

    Liang, Shibo; Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn; Si, Jia; Zhong, Donglai; Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

    2014-08-11

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2?V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  15. Trapped-ion quantum logic gates based on oscillating magnetic fields

    E-Print Network [OSTI]

    C. Ospelkaus; C. E. Langer; J. M. Amini; K. R. Brown; D. Leibfried; D. J. Wineland

    2008-05-14

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multi-qubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser beam control and motional state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

  16. High-Performance Solution-Processed Amorphous-Oxide-Semiconductor TFTs with Organic Polymeric Gate Dielectrics

    E-Print Network [OSTI]

    Pecunia, Vincenzo; Banger, Kulbinder K.; Sirringhaus, Henning

    2015-01-13

    are shown in Table 1: CYTOP™, an amorphous fluoropolymer of the PTFE family; poly(?-methylstyrene) (P?MS), a hydrophobic polymer with a phenyl functionality; poly(styrene-co-acrylonitrile) (SAN), a copolymer with nitrile functionality; poly(bisphenol A...

  17. Zirconium-doped tantalum oxide high-k gate dielectric films 

    E-Print Network [OSTI]

    Tewg, Jun-Yen

    2005-02-17

    ) is unacceptable for many practical reasons. By replacing the SiO2 layer with a high dielectric constant material (high-k), many of the problems can be solved. In this study, a novel high-k dielectric thin film, i.e., TaOx doped with Zr, was deposited and studied...

  18. Stratospheric sulfur oxidation kinetics

    SciTech Connect (OSTI)

    Jayne, J.T.; Worsnop, D.R.; Kolb, C.E. [Aerodyne Research, Inc., Billerica, MA (United States)] [and others

    1995-12-31

    Oxidation of SO2 to H2SO4 in the atmosphere is believed to involve the reaction of SO3 with water. It is commonly assumed that this is an important step leading to homogeneous nucleation of H2SO4 aerosol particles. Heterogeneous chemistry on sulfuric acid aerosols regulate much of the ozone photochemistry in the lower stratosphere and are also believed to have significant effect on the climate. Understanding aerosol loading requires a detailed knowledge of the stratospheric sulfur budget, including its oxidation kinetics. Here we present results of a laboratory project studying a key step in the oxidation process, the homogeneous reaction between SO3 and H2O vapor. Kinetic measurements are performed in a high-pressure turbulent fast-flow reactor (fabricated at MIT) which minimizes heterogeneous loss of SO3 on reactorwalls. The rate of decay of SO3 and the appearance of H2SO4 is monitored in the presence of excess water vapor. Gas phase reactants and products are detected via an atmospheric pressure chemical ionization mass spectrometer which is coupled to the exit of the flow reactor. Sulfuric acid nucleation studies can also be performed using the turbulent flow reactor. Initial measurements using a particle detector (based on Mie scattering) showed that aerosol formation and particle size distribution are controlled by varying the SO3/H2O gas ratio and the reactor temperature. Results for the reaction SO3J+ H2O show a second order dependence in water vapor density and a strong negative temperature dependence. The results, measured in the range -30C to +95C, imply that an SO3.H2O adduct and/or a water dimer species is likely involved in the reaction mechanism. Results of recent theoretical calculations on the SO3 + H2O system also support the finding that two water molecules are involved. Implications for the gas phase production of sulfuric acid in the atmosphere will be discussed.

  19. Proton conducting sodium alginate electrolyte laterally coupled low-voltage oxide-based transistors

    SciTech Connect (OSTI)

    Liu, Yang Hui; Wan, Qing; Qiang Zhu, Li; Shi, Yi

    2014-03-31

    Solution-processed sodium alginate electrolyte film shows a high proton conductivity of ?5.5?×?10{sup ?3} S/cm and a high lateral electric-double-layer (EDL) capacitance of ?2.0??F/cm{sup 2} at room temperature with a relative humidity of 57%. Low-voltage in-plane-gate indium-zinc-oxide-based EDL transistors laterally gated by sodium alginate electrolytes are fabricated on glass substrates. The field-effect mobility, current ON/OFF ratio, and subthreshold swing of such EDL transistors are estimated to be 4.2 cm{sup 2} V{sup ?1} s{sup ?1}, 2.8?×?10{sup 6}, and 130?mV/decade, respectively. At last, a low-voltage driven resistor-load inverter is also demonstrated. Such in-plane-gate EDL transistors have potential applications in portable electronics and low-cost biosensors.

  20. Nanoengineered Thin Films for Solid Oxide Fuel Cells 

    E-Print Network [OSTI]

    Su, Qing

    2013-11-21

    Solid oxide fuel cells (SOFCs) are very attractive as energy generation devices because of their high energy efficiency, flexible fuel selections and clean energy conversion. To avoid cell cracking and formation of non-conducting compounds...

  1. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Abdelhadi Belouad; Ahmed Jellal; Youness Zahidi

    2015-05-29

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  2. Gate-Tunable Graphene Quantum Dot and Dirac Oscillator

    E-Print Network [OSTI]

    Belouad, Abdelhadi; Zahidi, Youness

    2015-01-01

    We obtain the solution of the Dirac equation in (2+1) dimensions in the presence of a constant magnetic field normal to the plane together with a two-dimensional Dirac-oscillator potential coupling. We study the energy spectrum of graphene quantum dot (QD) defined by electrostatic gates. We give discussions of our results based on different physical settings, whether the cyclotron frequency is similar or larger/smaller compared to the oscillator frequency. This defines an effective magnetic field that produces the effective quantized Landau levels. We study analytically such field in gate-tunable graphene QD and show that our structure allow us to control the valley degeneracy. Finally, we compare our results with already published work and also discuss the possible applications of such QD.

  3. High Fidelity Quantum Gates in the Presence of Dispersion

    E-Print Network [OSTI]

    Botan Khani; Seth T. Merkel; Felix Motzoi; Jay M. Gambetta; Frank K. Wilhelm

    2011-11-07

    We numerically demonstrate the control of motional degrees of freedom of an ensemble of neutral atoms in an optical lattice with a shallow trapping potential. Taking into account the range of quasimomenta across different Brillouin zones results in an ensemble whose members effectively have inhomogeneous control fields as well as spectrally distinct control Hamiltonians. We present an ensemble-averaged optimal control technique that yields high fidelity control pulses, irrespective of quasimomentum, with average fidelities above 98%. The resulting controls show a broadband spectrum with gate times in the order of several free oscillations to optimize gates with up to 13.2% dispersion in the energies from the band structure. This can be seen as a model system for the prospects of robust quantum control. This result explores the limits of discretizing a continuous ensemble for control theory.

  4. Quantum gate using qubit states separated by terahertz

    SciTech Connect (OSTI)

    Toyoda, Kenji; Urabe, Shinji [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan); Haze, Shinsuke [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531 (Japan); Yamazaki, Rekishu [JST-CREST, 4-1-8 Honmachi, Kawaguchi, Saitama 331-0012 (Japan)

    2010-03-15

    A two-qubit quantum gate is realized using electronically excited states in a single ion with an energy separation on the order of a terahertz times the Planck constant as a qubit. Two phase-locked lasers are used to excite a stimulated Raman transition between two metastable states D{sub 3/2} and D{sub 5/2} separated by 1.82 THz in a single trapped {sup 40}Ca{sup +} ion to construct a qubit, which is used as the target bit for the Cirac-Zoller two-qubit controlled NOT gate. Quantum dynamics conditioned on a motional qubit is clearly observed as a fringe reversal in Ramsey interferometry.

  5. Synthesis of Reversible Functions Beyond Gate Count and Quantum Cost

    E-Print Network [OSTI]

    Robert Wille; Mehdi Saeedi; Rolf Drechsler

    2010-04-26

    Many synthesis approaches for reversible and quantum logic have been proposed so far. However, most of them generate circuits with respect to simple metrics, i.e. gate count or quantum cost. On the other hand, to physically realize reversible and quantum hardware, additional constraints exist. In this paper, we describe cost metrics beyond gate count and quantum cost that should be considered while synthesizing reversible and quantum logic for the respective target technologies. We show that the evaluation of a synthesis approach may differ if additional costs are applied. In addition, a new cost metric, namely Nearest Neighbor Cost (NNC) which is imposed by realistic physical quantum architectures, is considered in detail. We discuss how existing synthesis flows can be extended to generate optimal circuits with respect to NNC while still keeping the quantum cost small.

  6. Formation of 15 nm scale Coulomb blockade structures in silicon by electron beam lithography with a bilayer resist process

    E-Print Network [OSTI]

    ) wafers with 400 nm buried oxide layers pre- pared by Smart CutTM technology were used. The device region was thinned down to 30 nm by dry oxidation and then the top oxide layer was etched down to a thickness of 20 oxide layer and patterned for formation of EBL markers for e-beam lithogra- phy. After patterning marker

  7. High image quality sub 100 picosecond gated framing camera development

    SciTech Connect (OSTI)

    Price, R.H.; Wiedwald, J.D.

    1983-11-17

    A major challenge for laser fusion is the study of the symmetry and hydrodynamic stability of imploding fuel capsules. Framed x-radiographs of 10-100 ps duration, excellent image quality, minimum geometrical distortion (< 1%), dynamic range greater than 1000, and more than 200 x 200 pixels are required for this application. Recent progress on a gated proximity focused intensifier which meets these requirements is presented.

  8. GATE: Energy Efficient Vehicles for Sustainable Mobility | Department of

    Office of Energy Efficiency and Renewable Energy (EERE) Indexed Site

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on Delicious Rank EERE:FinancingPetroleum12,Executive Compensation References: FAR 31.205-6Applications |Energy GATE:

  9. Single qubit gates in frequency-crowded transmon systems

    E-Print Network [OSTI]

    R. Schutjens; F. Abu Dagga; D. J. Egger; F. K. Wilhelm

    2013-06-10

    Recent experimental work on superconducting transmon qubits in 3D cavities show that their coherence times are increased by an order of magnitude compared to their 2D cavity counterparts. However to take advantage of these coherence times while scaling up the number of qubits it is advantageous to address individual qubits which are all coupled to the same 3D cavity fields. The challenge in controlling this system comes from spectral crowding, where leakage transition of qubits are close to computational transitions in other. Here it is shown that fast pulses are possible which address single qubits using two quadrature control of the pulse envelope while the DRAG method alone only gives marginal improvements over the conventional Gaussian pulse shape. On the other hand, a first order result using the Magnus expansion gives a fast analytical pulse shape which gives a high fidelity gate for a specific gate time, up to a phase factor on the second qubit. Further numerical analysis corroborates these results and yields to even faster gates, showing that leakage state anharmonicity does not provide a fundamental quantum speed limit.

  10. Formulation and method for preparing gels comprising hydrous aluminum oxide

    SciTech Connect (OSTI)

    Collins, Jack L.

    2014-06-17

    Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent.

  11. Formulation and method for preparing gels comprising hydrous cerium oxide

    DOE Patents [OSTI]

    Collins, Jack L; Chi, Anthony

    2013-05-07

    Formulations useful for preparing hydrous cerium oxide gels contain a metal salt including cerium, an organic base, and a complexing agent. Methods for preparing gels containing hydrous cerium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including cerium, an organic base, and a complexing agent.

  12. Formulation and method for preparing gels comprising hydrous hafnium oxide

    DOE Patents [OSTI]

    Collins, Jack L; Hunt, Rodney D; Montgomery, Frederick C

    2013-08-06

    Formulations useful for preparing hydrous hafnium oxide gels contain a metal salt including hafnium, an acid, an organic base, and a complexing agent. Methods for preparing gels containing hydrous hafnium oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including hafnium, an acid, an organic base, and a complexing agent.

  13. Synthesis of zirconium oxide nanoparticle by sol-gel technique

    SciTech Connect (OSTI)

    Lim, H. S.; Ahmad, A.; Hamzah, H. [School of Chemical Science and Food Technology, Faculty of Science and Technology, National University of Malaysia, 43600 Bangi (Malaysia)

    2013-11-27

    Zirconium oxide nanoparticle is synthesized using sol-gel technique. Various mole ratio of ammonia solution and nitric acid relative to zirconium propoxide is added in the reaction to study the effect on the crystallinity and particle size on zirconium oxide particle. Zirconium oxide synthesized with nitric acid have the smallest particle size under FESEM image and show the increasing formation of crystalline tetragonal phase under XRD diffractogram.

  14. Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

    SciTech Connect (OSTI)

    Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng; Nishimura, Tomonori; Nagashio, Kosuke; Toriumi, Akira [Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656 (Japan); JST, CREST, 7-3-1 Hongo, Tokyo 113-8656 (Japan)

    2014-03-03

    We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering and network modification of Y-GeO{sub 2}.

  15. Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

    SciTech Connect (OSTI)

    Zhernokletov, D. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Laukkanen, P. [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland)] [Department of Physics and Astronomy, University of Turku, Turku FI-20014 (Finland); Dong, H.; Brennan, B.; Kim, J. [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Galatage, R. V. [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)] [Department of Electrical Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States); Yakimov, M.; Tokranov, V.; Oktyabrsky, S. [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States)] [College of Nanoscale Science and Engineering, University at Albany-SUNY, Albany, New York 12203 (United States); Wallace, R. M. [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States) [Department of Physics, University of Texas at Dallas, Richardson, Texas 75080 (United States); Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080 (United States)

    2013-05-27

    A crystalline oxide film on InAs(100) is investigated with in situ monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction before and after in situ deposition of Al{sub 2}O{sub 3} by atomic layer deposition (ALD) as well as upon air exposure. The oxidation process leads to arsenic and indium trivalent oxidation state formation. The grown epitaxial oxide-InAs interface is stable upon ALD reactor exposure; however, trimethyl aluminum decreases oxidation states resulting in an unreconstructed surface. An increase in oxide concentration is also observed upon air exposure suggesting the crystalline oxide surface is unstable.

  16. Pd-Catalyzed Cyclizations Direct Oxidative Heck

    E-Print Network [OSTI]

    Stoltz, Brian M.

    events: 1) halogenation of an aryl or vinyl precursor and 2) palladium(0)-catalyzed CÀC bond formation to develop palladium(ii)-catalyzed dehydrogenation as a general oxidation method,[6,7] we recently described with subsequent olefin insertion and b-hydrogen elimina- tion.[9] Importantly, this mechanism is analogous

  17. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, P.G.; Smith, P.M.; Sigmon, T.W.; Aceves, R.C.

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics. 5 figs.

  18. Method for formation of thin film transistors on plastic substrates

    DOE Patents [OSTI]

    Carey, Paul G. (Mountain View, CA); Smith, Patrick M. (San Ramon, CA); Sigmon, Thomas W. (Portola Valley, CA); Aceves, Randy C. (Livermore, CA)

    1998-10-06

    A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.

  19. Water Clustering on Nanostructured Iron Oxide Films

    SciTech Connect (OSTI)

    Merte, L. R.; Bechstein, Ralf; Peng, Guowen; Rieboldt, Felix; Farberow, Carrie A.; Zeuthen, Helene; Knudsen, Jan; Laegsgaard, E.; Wendt, Stefen; Mavrikakis, Manos; Besenbacher, Fleming

    2014-06-30

    The adhesion of water to solid surfaces is characterized by the tendency to balance competing molecule–molecule and molecule–surface interactions. Hydroxyl groups form strong hydrogen bonds to water molecules and are known to substantially influence the wetting behaviour of oxide surfaces, but it is not well-understood how these hydroxyl groups and their distribution on a surface affect the molecular-scale structure at the interface. Here we report a study of water clustering on a moire´-structured iron oxide thin film with a controlled density of hydroxyl groups. While large amorphous monolayer islands form on the are film, the hydroxylated iron oxide film acts as a hydrophilic nanotemplate, causing the formation of a regular array of ice-like hexameric nanoclusters. The formation of this ordered phase is localized at the nanometre scale; with increasing water coverage, ordered and amorphous water are found to coexist at adjacent hydroxylated and hydroxyl-free domains of the moire´ structure.

  20. L{sub g}?=?100?nm In{sub 0.7}Ga{sub 0.3}As quantum well metal-oxide semiconductor field-effect transistors with atomic layer deposited beryllium oxide as interfacial layer

    SciTech Connect (OSTI)

    Koh, D., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); SEMATECH, Inc., Albany, New York 12203 (United States); Kwon, H. M. [Department of Electronics Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of); Kim, T.-W., E-mail: dh.koh@utexas.edu, E-mail: Taewoo.Kim@sematech.org; Veksler, D.; Gilmer, D.; Kirsch, P. D. [SEMATECH, Inc., Albany, New York 12203 (United States); Kim, D.-H. [SEMATECH, Inc., Albany, New York 12203 (United States); GLOBALFOUNDRIES, Malta, New York 12020 (United States); Hudnall, Todd W. [Department of Chemistry and Biochemistry, Texas State University, San Marcos, Texas, 78666 (United States); Bielawski, Christopher W. [Department of Chemistry and Biochemistry, The University of Texas at Austin, Austin, Texas 78712 (United States); Maszara, W. [GLOBALFOUNDRIES, Santa Clara, California 95054 (United States); Banerjee, S. K. [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States)

    2014-04-21

    In this study, we have fabricated nanometer-scale channel length quantum-well (QW) metal-oxide-semiconductor field effect transistors (MOSFETs) incorporating beryllium oxide (BeO) as an interfacial layer. BeO has high thermal stability, excellent electrical insulating characteristics, and a large band-gap, which make it an attractive candidate for use as a gate dielectric in making MOSFETs. BeO can also act as a good diffusion barrier to oxygen owing to its small atomic bonding length. In this work, we have fabricated In{sub 0.53}Ga{sub 0.47}As MOS capacitors with BeO and Al{sub 2}O{sub 3} and compared their electrical characteristics. As interface passivation layer, BeO/HfO{sub 2} bilayer gate stack presented effective oxide thickness less 1 nm. Furthermore, we have demonstrated In{sub 0.7}Ga{sub 0.3}As QW MOSFETs with a BeO/HfO{sub 2} dielectric, showing a sub-threshold slope of 100?mV/dec, and a transconductance (g{sub m,max}) of 1.1 mS/?m, while displaying low values of gate leakage current. These results highlight the potential of atomic layer deposited BeO for use as a gate dielectric or interface passivation layer for III–V MOSFETs at the 7?nm technology node and/or beyond.

  1. Universal Gates via Fusion and Measurement Operations on SU$(2)_4$ Anyons

    E-Print Network [OSTI]

    Claire Levaillant; Bela Bauer; Michael Freedman; Zhenghan Wang; Parsa Bonderson

    2015-07-01

    We examine a class of operations for topological quantum computation based on fusing and measuring topological charges for systems with SU$(2)_4$ or $k=4$ Jones-Kauffman anyons. We show that such operations augment the braiding operations, which, by themselves, are not computationally universal. This augmentation results in a computationally universal gate set through the generation of an exact, topologically protected irrational phase gate and an approximate, topologically protected controlled-$Z$ gate.

  2. A simple trapped-ion architecture for high-fidelity Toffoli gates

    E-Print Network [OSTI]

    Massimo Borrelli; Laura Mazzola; Mauro Paternostro; Sabrina Maniscalco

    2010-12-08

    We discuss a simple architecture for a quantum Toffoli gate implemented using three trapped ions. The gate, which in principle can be implemented with a single laser-induced operation, is effective under rather general conditions and is strikingly robust (within any experimentally realistic range of values) against dephasing, heating and random fluctuations of the Hamiltonian parameters. We provide a full characterization of the unitary and noise-affected gate using three-qubit quantum process tomography.

  3. Synthesis, characterization, optical and sensing property of manganese oxide nanoparticles

    SciTech Connect (OSTI)

    Manigandan, R.; Suresh, R.; Giribabu, K.; Narayanan, V., E-mail: vnnara@yahoo.co.in [Department of Inorganic Chemistry, University of Madras, Guindy Campus, Chennai 600 025 (India); Vijayalakshmi, L. [Annai Veilankanni's College for Women (Arts and Science), Saidapet, Chennai 600015 (India); Stephen, A. [Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai 600 025 (India)

    2014-01-28

    Manganese oxide nanoparticles were prepared by thermal decomposition of manganese oxalate. Manganese oxalate was synthesized by reacting 1:1 mole ratio of manganese acetate and ammonium oxalate along with sodium dodecyl sulfate (SDS). The structural characterization of manganese oxalate and manganese oxide nanoparticles was analyzed by XRD. The XRD spectrum confirms the crystal structure of the manganese oxide and manganese oxalate. In addition, the average grain size, lattice parameter values were also calculated using XRD spectrum. Moreover, the diffraction peaks were broadened due to the smaller size of the particle. The band gap of manganese oxide was calculated from optical absorption, which was carried out by DRS UV-Visible spectroscopy. The morphology of manganese oxide nanoparticles was analyzed by SEM images. The FT-IR analysis confirms the formation of the manganese oxide from manganese oxalate nanoparticles. The electrochemical sensing behavior of manganese oxide nanoparticles were investigated using hydrogen peroxide by cyclic voltammetry.

  4. Cellular/Molecular A Calcium-Induced Calcium Influx Factor, Nitric Oxide,

    E-Print Network [OSTI]

    Newman, Eric A.

    in astrocytes lead to the Ca2 -dependent synthesis of nitric oxide. This in turn stimulates a Ca2 influx pathwayCellular/Molecular A Calcium-Induced Calcium Influx Factor, Nitric Oxide, Modulates the Refilling in astrocytes, we imaged the formation of nitric oxide in cultured murine cortical astrocytes using DAF-FM (4

  5. Use of high-level design information for enabling automation of fine-grained power gating

    E-Print Network [OSTI]

    Agarwal, Abhinav

    2014-01-01

    Leakage power reduction through power gating requires considerable design and verification effort. Conventionally, extensive analysis is required for dividing a heterogeneous design into power domains and generating control ...

  6. How to Successfully Implement a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated

    E-Print Network [OSTI]

    Mudd, John

    2009-05-15

    , utilizing some of the strategies, for the implementation of a Knowledge Management System for the Mechanical Engineering Department at Gating Incorporated....

  7. A Surprising Clarification of the Mechanism of Ion-channel Voltage-Gating

    E-Print Network [OSTI]

    Ashok Palaniappan

    2011-04-20

    An intense controversy has surrounded the mechanism of voltage-gating in ion channels. We interpreted the two leading models of voltage-gating with respect to the thermodynamic energetics of membrane insertion of the voltage-sensing 'module' from a comprehensive set of potassium channels. KvAP is an archaeal voltage-gated potassium channel whose x-ray structure was the basis for determining the general mechanism of voltage-gating. The free energy of membrane insertion of the KvAP voltage sensor was revealed to be a single outlier. This was due to its unusual sequence that facilitated large gating movements in its native lipid membrane. This degree of free energy was the least typical of the other voltage sensors, including the Shaker potassium channel. We inferred that the two leading models of voltage-gating referred to alternative mechanisms of voltage-gating: each is applicable to an independent set of ion channels. The large motion of the voltage-sensor during gating proposed by the KvAP-paddle model of gating is unlikely to be mirrored by the majority of ion channels whose voltage sensors are not located at the membrane-cytoplasm interface in the channel closed state.

  8. Sandia Energy - ECIS and i-GATE: Innovation Hub Connects Clean...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    support system to accelerate the commercialization of innovative technologies related to green transportation and clean energy. There are now eight i-GATE clients developing fuel...

  9. Low Power 8T SRAM Using 32nm Independent Gate FinFET Young Bok Kim

    E-Print Network [OSTI]

    Ayers, Joseph

    by the process, but also it can be controlled by the back gate voltage (VGb). This is similar to the body effect

  10. Implementing a neutral-atom controlled-phase gate with a single Rydberg pulse

    E-Print Network [OSTI]

    Rui Han; Hui Khoon Ng; Berthold-Georg Englert

    2014-09-04

    One can implement fast two-qubit entangling gates by exploiting the Rydberg blockade. Although various theoretical schemes have been proposed, experimenters have not yet been able to demonstrate two-atom gates of high fidelity due to experimental constraints. We propose a novel scheme, which only uses a single Rydberg pulse, for the construction of neutral-atom controlled-phase gates. In contrast to the existing schemes, our scheme is simpler to implement and requires neither individual addressing of atoms nor adiabatic procedures. With realistically estimated experimental parameters, a gate fidelity higher than 0.99 is achievable.

  11. Bill Gates and Deputy Secretary Poneman Discuss the Energy Technology Landscape

    Office of Energy Efficiency and Renewable Energy (EERE)

    Bill Gates and Deputy Secretary of Energy Daniel Poneman discuss the future of energy technology during the twenty-second Plenary Meeting of the Nuclear Suppliers Group.

  12. Local implementations of non-local quantum gates in linear entangled channel

    E-Print Network [OSTI]

    Debashis Saha; Sanket Nandan; Prasanta K. Panigrahi

    2014-08-03

    In this paper, we demonstrate n-party controlled unitary gate implementations locally on arbitrary remote state through linear entangled channel where control parties share entanglement with the adjacent control parties and only one of them shares entanglement with the target party. In such a network, we describe the protocol of simultaneous implementation of controlled-Hermitian gate starting from three party scenario. We also explicate the implementation of three party controlled-Unitary gate, a generalized form of To?oli gate and subsequently generalize the protocol for n-party using minimal cost.

  13. Photo-oxidation catalysts

    DOE Patents [OSTI]

    Pitts, J. Roland (Lakewood, CO); Liu, Ping (Irvine, CA); Smith, R. Davis (Golden, CO)

    2009-07-14

    Photo-oxidation catalysts and methods for cleaning a metal-based catalyst are disclosed. An exemplary catalyst system implementing a photo-oxidation catalyst may comprise a metal-based catalyst, and a photo-oxidation catalyst for cleaning the metal-based catalyst in the presence of light. The exposure to light enables the photo-oxidation catalyst to substantially oxidize absorbed contaminants and reduce accumulation of the contaminants on the metal-based catalyst. Applications are also disclosed.

  14. Nonadiabatic molecular orientation by polarization-gated ultrashort laser pulses

    SciTech Connect (OSTI)

    Chen Cheng; Wu Jian; Zeng Heping [State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062 (China)

    2010-09-15

    We show that the nonadiabatic orientation of diatomic polar molecules can be controlled by polarization-gated ultrashort laser pulses. By finely adjusting the time interval between two circularly polarized pulses of different wavelengths but the same helicity, the orientation direction of the molecules can be twirled. A cloverlike potential is created by using two circularly polarized laser pulses of different wavelengths and opposite helicity, leading to multidirectional molecular orientation along the potential wells, which can be well revealed by a high-order statistics metric of <>.

  15. Gates County, North Carolina: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky: Energy ResourcesMaui Area (DOEMaui AreaGastonGates County,

  16. Gates Mills, Ohio: Energy Resources | Open Energy Information

    Open Energy Info (EERE)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Home Page on Google Bookmark EERE: Alternative Fuels Data Center Home Page on QA:QAsource History View New PagesSustainable UrbanKentucky: Energy ResourcesMaui Area (DOEMaui AreaGastonGates

  17. Gate Hours & Services | Stanford Synchrotron Radiation Lightsource

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity ofkandz-cm11 Outreach Home Room NewsInformation Current HABFESOpportunities Nuclearlong version)shortGate Hours & Services

  18. Method of physical vapor deposition of metal oxides on semiconductors

    DOE Patents [OSTI]

    Norton, David P. (Knoxville, TN)

    2001-01-01

    A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

  19. The oxidative dehydrogenation of ethane with nitrous oxide by molybdenum oxide supported on silica gel 

    E-Print Network [OSTI]

    Yang, Tsong-Jen

    1979-01-01

    or indirectly from 02, thus tne difference between the two oxidants becomes less sig- nificant. Both rates of formation for C2H4 and C0 were enhanced in the presence of a very small amount of oxygen in the mixture of C2B& and N 0. A radical mechanism... process because of the large and expanding demand for alkenes and dialkenes which are used in the manufacture of various chemical prod- ucts such as detergents, plastics, synthetic rubber, anc high octane gasoline. One example of this type of reaction...

  20. Phase Discrimination through Oxidant Selection for Iron Oxide...

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Phase Discrimination through Oxidant Selection for Iron Oxide Ultrathin Films Home > Research > ANSER Research Highlights > Phase Discrimination through Oxidant Selection for Iron...

  1. Cerium Oxide Coating for Oxidation Reduction

    Broader source: All U.S. Department of Energy (DOE) Office Webpages (Extended Search)

    Award In order to produce power more efficiently and cleanly, the next generation of power plant boilers, turbines, solid oxide fuel cells (SOFCs) and other essential equipment...

  2. SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

    SciTech Connect (OSTI)

    Senthilkumar, S

    2014-06-01

    Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

  3. Droplet minimizers for the Gates-Lebowitz-Penrose free energy functional

    E-Print Network [OSTI]

    E. A. Carlen; M. C. Carvalho; R. Esposito; J. L. Lebowitz; R. Marra

    2009-05-21

    We study the structure of the constrained minimizers of the Gates-Lebowitz-Penrose free-energy functional ${\\mathcal F}_{\\rm GLP}(m)$, non-local functional of a density field $m(x)$, $x\\in {\\mathcal T}_L$, a $d$-dimensional torus of side length $L$. At low temperatures, ${\\mathcal F}_{\\rm GLP}$ is not convex, and has two distinct global minimizers, corresponding to two equilibrium states. Here we constrain the average density $L^{-d}\\int_{{\\cal T}_L}m(x)\\dd x$ to be a fixed value $n$ between the densities in the two equilibrium states, but close to the low density equilibrium value. In this case, a "droplet" of the high density phase may or may not form in a background of the low density phase, depending on the values $n$ and $L$. We determine the critical density for droplet formation, and the nature of the droplet, as a function of $n$ and $L$. The relation between the free energy and the large deviations functional for a particle model with long-range Kac potentials, proven in some cases, and expected to be true in general, then provides information on the structure of typical microscopic configurations of the Gibbs measure when the range of the Kac potential is large enough.

  4. Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-k/metal-gate: Effects of hydrogen thermal annealing and nanowire shape

    E-Print Network [OSTI]

    Hashemi, Pouya

    A detailed study of hole mobility is presented for gate-all-around Si nanowire p-MOSFETs with conformal high-?/MG and various high-temperature hydrogen annealing processes. Hole mobility enhancement relative to planar SOI ...

  5. Sodium channel activation mechanisms. Insights from deuterium oxide substitution

    SciTech Connect (OSTI)

    Alicata, D.A.; Rayner, M.D.; Starkus, J.G. )

    1990-04-01

    Schauf and Bullock, using Myxicola giant axons, demonstrated that solvent substitution with deuterium oxide (D2O) significantly affects both sodium channel activation and inactivation kinetics without corresponding changes in gating current or tail current rates. They concluded that (a) no significant component of gating current derives from the final channel opening step, and (b) channels must deactivate (during tail currents) by a different pathway from that used in channel opening. By contrast, Oxford found in squid axons that when a depolarizing pulse is interrupted by a brief (approximately 100 microseconds) return to holding potential, subsequent reactivation (secondary activation) is very rapid and shows almost monoexponential kinetics. Increasing the interpulse interval resulted in secondary activation rate returning towards control, sigmoid (primary activation) kinetics. He concluded that channels open and close (deactivate) via the same pathway. We have repeated both sets of observations in crayfish axons, confirming the results obtained in both previous studies, despite the apparently contradictory conclusions reached by these authors. On the other hand, we find that secondary activation after a brief interpulse interval (50 microseconds) is insensitive to D2O, although reactivation after longer interpulse intervals (approximately 400 microseconds) returns towards a D2O sensitivity similar to that of primary activation. We conclude that D2O-sensitive primary activation and D2O-insensitive tail current deactivation involve separate pathways. However, D2O-insensitive secondary activation involves reversal of the D2O-insensitive deactivation step. These conclusions are consistent with parallel gate models, provided that one gating particle has a substantially reduced effective valence.

  6. Workshop on gate valve pressure locking and thermal binding

    SciTech Connect (OSTI)

    Brown, E.J.

    1995-07-01

    The purpose of the Workshop on Gate Valve Pressure Locking and Thermal Binding was to discuss pressure locking and thermal binding issues that could lead to inoperable gate valves in both boiling water and pressurized water reactors. The goal was to foster exchange of information to develop the technical bases to understand the phenomena, identify the components that are susceptible, discuss actual events, discuss the safety significance, and illustrate known corrective actions that can prevent or limit the occurrence of pressure locking or thermal binding. The presentations were structured to cover U.S. Nuclear Regulatory Commission staff evaluation of operating experience and planned regulatory activity; industry discussions of specific events, including foreign experience, and efforts to determine causes and alleviate the affects; and valve vendor experience and recommended corrective action. The discussions indicated that identifying valves susceptible to pressure locking and thermal binding was a complex process involving knowledge of components, systems, and plant operations. The corrective action options are varied and straightforward.

  7. Constructing Quantum Logic Gates Using q-Deformed Harmonic Oscillator Algebras

    E-Print Network [OSTI]

    Azmi Ali Altintas; Fatih Ozaydin; Can Yesilyurt; Sinan Bugu; Metin Arik

    2015-04-23

    We study two-level q-deformed angular momentum states and us- ing q-deformed harmonic oscillators, we provide a framework for con- structing qubits and quantum gates. We also present the construction of some basic quantum gates including CNOT, SWAP, Toffoli and Fredkin.

  8. Z-Gate Operation on a Superconducting Flux Qubit via Its Readout SQUID

    E-Print Network [OSTI]

    Jin, X.?Y.

    Detuning a superconducting qubit from its rotating frame is one means to implement a Z-gate operation. In this work, we implement a Z gate by pulsing a current through the qubit’s readout dc SQUID. While the dc SQUID acts ...

  9. Gating Currents from Kv7 Channels Carrying Neuronal Hyperexcitability Mutations in the Voltage-Sensing Domain

    E-Print Network [OSTI]

    Bezanilla, Francisco

    unable to provide a detailed assessment of the structural rearrangements underlying channel gating.2 channels both functionally and structurally, were used for these experiments. The data obtained showed activation of gating-pore currents at depolarized potentials. These results reveal that distinct molecular

  10. THE SMALL SIGNAL AMPLIFICATION OF THE GATED DIODE OPERATED IN BREAKDOWN REGIME

    E-Print Network [OSTI]

    capacitance of approximately 4pF. Figure 1 - Cross section of the gated diode. The device was fabricated impedance given by the pn junction avalanche regime. The cross section of the utilized device is presented and the area of the gate gives a capacitance of approximately 4pF. 2. DC Measurements In order to set the bias

  11. [ ]February 2014 The original 1957 Gates pile driving formula is an empirically derived dynamic formula

    E-Print Network [OSTI]

    Harms, Kyle E.

    [ ]February 2014 PROBLEM The original 1957 Gates pile driving formula is an empirically derived dynamic formula that is used to predict pile capacity in the field during pile installation.The original Gates formula tends to over-predict pile capacity for low driving resistances and under-predict pile

  12. Fig. 1. Schematic of gating operation driven by centrifugal force. (a) shows top view of the

    E-Print Network [OSTI]

    Banerjee, Debjyoti

    R1 R2 (a) Pm (b) Fig. 1. Schematic of gating operation driven by centrifugal force. (a) shows top-expanding opening. Liquid pressure at the meniscus is Pm. DESIGN ANALYSES OF CAPILLARY BURST VALVES IN CENTRIFUGAL, Capillary Gating, Centrifugal force, FlumeCAD I. Introduction There is a wide interest in micron

  13. Quantum Process Tomography of a Universal Entangling Gate Implemented with Josephson Phase Qubits

    E-Print Network [OSTI]

    Martinis, John M.

    . Experiments using superconducting qubits have validated the truth table for particular implementations of e the performance of a universal entangling gate between two superconducting quantum bits. Process tomography . The SQiSW is a "natural" two-qubit gate as it directly results from capacitive coupling of superconducting

  14. Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum computing

    E-Print Network [OSTI]

    Martinis, John M.

    Logic gates at the surface code threshold: Superconducting qubits poised for fault-tolerant quantum circuits, and is compatible with microfabrication. For superconducting qubits the surface code7 99%. Here, we demonstrate a universal set of logic gates in a superconducting multi-qubit processor

  15. Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe*

    E-Print Network [OSTI]

    Beebe, David J.

    Microfluidic logic gates and timers{ Michael W. Toepke, Vinay V. Abhyankar and David J. Beebe to create a number of microfluidic analogs to electronic circuit components. Three classes of components are demonstrated: (1) OR/AND, NOR/NAND, and XNOR digital microfluidic logic gates; (2) programmable, autonomous

  16. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, Stewart M. (Albuquerque, NM); Bliss, David E. (Tijeras, NM); Kimmel, Mark W. (Edgewood, NM); Neal, Daniel R. (Tijeras, NM)

    1999-01-01

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media.

  17. Gated frequency-resolved optical imaging with an optical parametric amplifier

    DOE Patents [OSTI]

    Cameron, S.M.; Bliss, D.E.; Kimmel, M.W.; Neal, D.R.

    1999-08-10

    A system for detecting objects in a turbid media utilizes an optical parametric amplifier as an amplifying gate for received light from the media. An optical gating pulse from a second parametric amplifier permits the system to respond to and amplify only ballistic photons from the object in the media. 13 figs.

  18. STANDARD OPERATING PROCEDURE FOR TUBE "A1-GateOx" furnace in TRL.

    E-Print Network [OSTI]

    Reif, Rafael

    STANDARD OPERATING PROCEDURE FOR TUBE "A1-GateOx" furnace in TRL. INTRODUCTION Tube "A1-Gate. Three Eurotherm temperature controllers provide a 20 inch long, flat profile in the Center Zone the special heat resistant gloves to handle those parts PROCEDURE. 1) "ENGAGE" the machine in CORAL for TRL

  19. Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1

    E-Print Network [OSTI]

    Shepard, Kenneth

    Graphene field-effect transistors based on boron nitride gate dielectrics Inanc Meric1 , Cory Dean1, 10027 Tel: (212) 854-2529, Fax: (212) 932-9421, Email: shepard@ee.columbia.edu Abstract Graphene field of graphene, as the gate dielectric. The devices ex- hibit mobility values exceeding 10,000 cm2 /V

  20. Coherent molecular transistor: Control through variation of the gate wave function

    SciTech Connect (OSTI)

    Ernzerhof, Matthias

    2014-03-21

    In quantum interference transistors (QUITs), the current through the device is controlled by variation of the gate component of the wave function that interferes with the wave function component joining the source and the sink. Initially, mesoscopic QUITs have been studied and more recently, QUITs at the molecular scale have been proposed and implemented. Typically, in these devices the gate lead is subjected to externally adjustable physical parameters that permit interference control through modifications of the gate wave function. Here, we present an alternative model of a molecular QUIT in which the gate wave function is directly considered as a variable and the transistor operation is discussed in terms of this variable. This implies that we specify the gate current as well as the phase of the gate wave function component and calculate the resulting current through the source-sink channel. Thus, we extend on prior works that focus on the phase of the gate wave function component as a control parameter while having zero or certain discrete values of the current. We address a large class of systems, including finite graphene flakes, and obtain analytic solutions for how the gate wave function controls the transistor.

  1. Integrated Results for Dual Low Voltage IC Based High and Low Side Gate Drive

    E-Print Network [OSTI]

    , electronicballast I. INTRODUCTION High and low side gate drivers are required in most switching power converters Zane Colorado Power Electronics Center (CoPEC) Department of Electrical and Computer Engineering, UCB design for high and low side gate drive is presented based on use of two identical low voltage ICs

  2. High performance electrolyte-gated carbon nanotube transistors Sami Rosenblatt1

    E-Print Network [OSTI]

    McEuen, Paul L.

    1 High performance electrolyte-gated carbon nanotube transistors Sami Rosenblatt1 , Yuval Yaish1 , Jiwoong Park1,2 , Jeff Gore2 , Vera Sazonova1 , and Paul L. McEuen1 1 Laboratory of Atomic and Solid State, annealing to improve the contacts, and an electrolyte as a gate, we obtain very high device mobilites

  3. Molecular and quantum dot floating gate non-volatile memories

    E-Print Network [OSTI]

    Abdu, Hassen

    2008-01-01

    Conventional Flash memory devices face a scaling issue that will impede memory scaling beyond the 50nm node: a reliability issue involving the tunneling oxide thickness and charge retention. A possible solution is to replace ...

  4. Glitch Power Minimization by Gate Freezing L. Benini3 G. De Micheli A. Maciiz E. Maciiz M. Poncinoz R. Scarsiz

    E-Print Network [OSTI]

    De Micheli, Giovanni

    Glitch Power Minimization by Gate Freezing L. Benini3 G. De Micheli A. Maciiz E. Maciiz M freezing idea we present in this paper. Di erently from gate freezing, the techniques above are applied before placement and routing. We have applied the gate freezing procedure to the Iscas'85 benchmarks 2

  5. Creating fluid injectivity in tar sands formations

    DOE Patents [OSTI]

    Stegemeier, George Leo; Beer, Gary Lee; Zhang, Etuan

    2010-06-08

    Methods for treating a tar sands formation are described herein. Methods for treating a tar sands may include heating a portion of a hydrocarbon layer in the formation from one or more heaters located in the portion. The heat may be controlled to increase the permeability of at least part of the portion to create an injection zone in the portion with an average permeability sufficient to allow injection of a fluid through the injection zone. A drive fluid and/or an oxidizing fluid may be provided into the injection zone. At least some hydrocarbons are produced from the portion.

  6. Creating fluid injectivity in tar sands formations

    DOE Patents [OSTI]

    Stegemeier, George Leo; Beer, Gary Lee; Zhang, Etuan

    2012-06-05

    Methods for treating a tar sands formation are described herein. Methods for treating a tar sands may include heating a portion of a hydrocarbon layer in the formation from one or more heaters located in the portion. The heat may be controlled to increase the permeability of at least part of the portion to create an injection zone in the portion with an average permeability sufficient to allow injection of a fluid through the injection zone. A drive fluid and/or an oxidizing fluid may be provided into the injection zone. At least some hydrocarbons including mobilized hydrocarbons are produced from the portion.

  7. Alloy Films Deposited by Electroplating as Precursors for Protective Oxide Coatings on Solid Oxide Fuel Cells Metallic Interconnect Materials

    SciTech Connect (OSTI)

    Johnson, Christopher; Gemmen, R.S.; Cross, Caleb

    2006-10-01

    The successful development of stainless steel interconnects for intermediate temperature solid oxide fuel cells (SOFC) may be the materials breakthrough that makes SOFC technology truly commercial. Many of the ferritic stainless steels, however, suffer from a relatively high area specific resistance (ASR) after long exposure times at temperature and the Cr in the native oxide can evaporate and contaminate other cell components. Conductive coatings that resist oxide scale growth and chromium evaporation may prevent both of these problems. In the present study electrochemical deposition of binary alloys followed by oxidation of the alloy to form protective and conductive oxide layers is examined. Results are presented for the deposition of Mn/Co and Fe/Ni alloys via electroplating to form a precursor for spinel oxide coating formation. Analysis of the alloy coatings is done by SEM, EDS and XRD.

  8. Methane oxidation rates by AMS

    E-Print Network [OSTI]

    Pack, M; Heintz, M; ReeburGh, WS; Trumbore, SE; Valentine, DL; Xu, X

    2009-01-01

    second case. Number of cases Methane oxidation rates by AMSIn the marine environment methane (CH 4 ) oxidation consumes

  9. Procedures for realizing an approximate universal NOT gate

    E-Print Network [OSTI]

    Jeongho Bang; Seung-Woo Lee; Hyunseok Jeong; Jinhyoung Lee

    2012-12-19

    We consider procedures to realize an approximate universal NOT gate in terms of average fidelity and fidelity deviation. The average fidelity indicates the optimality of operation on average, while the fidelity deviation does the universality of operation. We show that one-qubit operations have a sharp trade-off relation between average fidelity and fidelity deviation, and two-qubit operations show a looser trade-off relation. The genuine universality holds for operations of more than two qubits, and those of even more qubits are beneficial to compensating imperfection of control. In addition, we take into account operational noises which contaminate quantum operation in realistic circumstances. We show that the operation recovers from the contamination by a feedback procedure of differential evolution. Our feedback scheme is also applicable to finding an optimal and universal operation of NOT.

  10. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, David K. (Golden, CO); Potter, Thomas F. (Denver, CO)

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber.

  11. Gas-controlled dynamic vacuum insulation with gas gate

    DOE Patents [OSTI]

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  12. Partial oxidation catalyst

    DOE Patents [OSTI]

    Krumpelt, Michael (Naperville, IL); Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Doshi, Rajiv (Downers Grove, IL)

    2000-01-01

    A two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion. The dehydrogenation portion is a group VIII metal and the oxide-ion conducting portion is selected from a ceramic oxide crystallizing in the fluorite or perovskite structure. There is also disclosed a method of forming a hydrogen rich gas from a source of hydrocarbon fuel in which the hydrocarbon fuel contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion at a temperature not less than about 400.degree. C. for a time sufficient to generate the hydrogen rich gas while maintaining CO content less than about 5 volume percent. There is also disclosed a method of forming partially oxidized hydrocarbons from ethanes in which ethane gas contacts a two-part catalyst comprising a dehydrogenation portion and an oxide-ion conducting portion for a time and at a temperature sufficient to form an oxide.

  13. Selective Electrocatalytic Activity of Ligand Stabilized Copper Oxide Nanoparticles

    SciTech Connect (OSTI)

    Kauffman, Douglas R.; Ohodnicki, Paul R.; Kail, Brian W; Matranga, Christopher

    2011-01-01

    Ligand stabilization can influence the surface chemistry of Cu oxide nanoparticles (NPs) and provide unique product distributions for electrocatalytic methanol (MeOH) oxidation and CO{sub 2} reduction reactions. Oleic acid (OA) stabilized Cu{sub 2}O and CuO NPs promote the MeOH oxidation reaction with 88% and 99.97% selective HCOH formation, respectively. Alternatively, CO{sub 2} is the only reaction product detected for bulk Cu oxides and Cu oxide NPs with no ligands or weakly interacting ligands. We also demonstrate that OA stabilized Cu oxide NPs can reduce CO{sub 2} into CO with a {approx}1.7-fold increase in CO/H{sub 2} production ratios compared to bulk Cu oxides. The OA stabilized Cu oxide NPs also show 7.6 and 9.1-fold increases in CO/H{sub 2} production ratios compared to weakly stabilized and non-stabilized Cu oxide NPs, respectively. Our data illustrates that the presence and type of surface ligand can substantially influence the catalytic product selectivity of Cu oxide NPs.

  14. Structural features of dielectric oxide laser ceramics

    SciTech Connect (OSTI)

    Kaminskii, Alexandr A; Taranov, A V; Khazanov, E N; Akchurin, M Sh

    2012-10-31

    The relation between the transport characteristics of subterahertz thermal phonons and the structural features of singlephase dielectric crystalline laser ceramics based on cubic oxides synthesised in different technological regimes is studied. The effect of plastic deformation on the formation of the grain structure and intergrain layers (boundaries), as well as on the thermophysical, acoustic, optical, and laser characteristics of the materials is analysed. (active media)

  15. Optimized controlled Z gates for two superconducting qubits coupled through a resonator

    E-Print Network [OSTI]

    D. J. Egger; F. K. Wilhelm

    2013-06-28

    Superconducting qubits are a promising candidate for building a quantum computer. A continued challenge for fast yet accurate gates to minimize the effects of decoherence. Here we apply numerical methods to design fast entangling gates, specifically the controlled Z, in an architecture where two qubits are coupled via a resonator. We find that the gates can be sped up by a factor of two and reach any target fidelity. We also discuss how systematic errors arising from experimental conditions affect the pulses and how to remedy them, providing a strategy for the experimental implementation of our results. We discuss the shape of the pulses, their spectrum and symmetry.

  16. Adiabatic two-photon quantum gate operations using a long-range photonic bus

    E-Print Network [OSTI]

    Anthony P. Hope; Thach G. Nguyen; Arnan Mitchell; Andrew D. Greentree

    2014-12-01

    Adiabatic techniques have much potential to realise practical and robust optical waveguide devices. Traditionally photonic elements are limited to coupling schemes that rely on proximity to nearest neighbour elements. We combine adiabatic passage with a continuum based long-range optical bus to break free from such topological restraints and thereby outline a new approach to photonic quantum gate design. We explicitly show designs for adiabatic quantum gates that produce a Hadamard, 50:50 and 1/3:2/3 beam splitter, and non-deterministic CNOT gate based on planar thin, shallow ridge waveguides. Our calculations are performed under conditions of one and two-photon inputs.

  17. Design of a spin-wave majority gate employing mode selection

    SciTech Connect (OSTI)

    Klingler, S. Pirro, P.; Brächer, T.; Leven, B.; Hillebrands, B.; Chumak, A. V.

    2014-10-13

    The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner, and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND-, and NOR- operations.

  18. Water Formatics Engineered formation of nanobubbles networks

    E-Print Network [OSTI]

    Jacob, Eshel Ben

    Water Formatics Engineered formation of nanobubbles networks in water and aqueous solutions We present the idea that the anomalous effects of rf-treatments of water and aqueous solution resulted from-bubble exchange interactions. These exchange interactions are mediated by the ordering of the water molecules

  19. Patent: Microbial-mediated method for metal oxide nanoparticle formation |

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefield MunicipalTechnical Report:Speeding access toSmall Reactor for DeepK.alpha. X-ray

  20. Microbial-mediated method for metal oxide nanoparticle formation (Patent) |

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(JournalspectroscopyReport) |(Patent) | SciTechSciTechConnect TechnicalSciTech

  1. Microbial-mediated method for metal oxide nanoparticle formation (Patent) |

    Office of Scientific and Technical Information (OSTI)

    AFDC Printable Version Share this resource Send a link to EERE: Alternative Fuels Data Center Home Page to someone by E-mail Share EERE: Alternative Fuels Data Center Home Page on Facebook Tweet about EERE: Alternative Fuels Data Center Home Page on Twitter Bookmark EERE: Alternative Fuels Data Center Homesum_a_epg0_fpd_mmcf_m.xls" ,"Available from WebQuantity of NaturalDukeWakefieldSulfate Reducing(JournalspectroscopyReport) |(Patent) | SciTechSciTechConnect

  2. Oxidation Resistant Graphite Studies

    SciTech Connect (OSTI)

    W. Windes; R. Smith

    2014-07-01

    The Very High Temperature Reactor (VHTR) Graphite Research and Development Program is investigating doped nuclear graphite grades exhibiting oxidation resistance. During a oxygen ingress accident the oxidation rates of the high temperature graphite core region would be extremely high resulting in significant structural damage to the core. Reducing the oxidation rate of the graphite core material would reduce the structural effects and keep the core integrity intact during any air-ingress accident. Oxidation testing of graphite doped with oxidation resistant material is being conducted to determine the extent of oxidation rate reduction. Nuclear grade graphite doped with varying levels of Boron-Carbide (B4C) was oxidized in air at nominal 740°C at 10/90% (air/He) and 100% air. The oxidation rates of the boronated and unboronated graphite grade were compared. With increasing boron-carbide content (up to 6 vol%) the oxidation rate was observed to have a 20 fold reduction from unboronated graphite. Visual inspection and uniformity of oxidation across the surface of the specimens were conducted. Future work to determine the remaining mechanical strength as well as graphite grades with SiC doped material are discussed.

  3. Development of a Thermal Oxidizer for Distributed Microturbine Based Generation

    SciTech Connect (OSTI)

    Tom Barton

    2009-03-01

    This project concerns the replacement of the catalytic bed in a microturbine with a thermal oxidizer. The advantage of a thermal oxidizer over a traditional combustion chamber is that the length and temperature of the device allows the volatile species to oxidize relatively slowly and without a flame front. With no flame, the temperature increase throughout the unit is spread over a much larger volume so there is no hot spot for thermal NO{sub x} formation, and the gas Btu level does not have to be above the ignition concentration. Project specific objectives included assessment of the materials and performance requirements of the thermal oxidizer, design the thermal oxidizer system, fabrication of the thermal oxidizer, testing of the oxidizer's performance in concert with the microturbine and comparison of the performance of the oxidizer with catalytic beds and traditional combustion chambers. The thermal oxidizer was designed and fabricated with the assistance of High Country Fabrication of Casper, Wyoming. The design consists of a long set of tubes surrounded by a packed bed of loose ceramic material. The outer vessel containing the tubes and packing is a 3-foot diameter steel shell with multiple layers of thermal insulation. After the metal components were fabricated, the vessel was shipped to Denver where the insulation was poured. The unit was shipped to the cosponsor site for integration with the 100 kW microturbine device. Connection of the thermal oxidizer to the Elliot microturbine turned out to be problematic. The high flow rate of gas tended to push the hot zone out of the oxidizer as assembled. The research team identified several approaches to improve the oxidizer performance including a longer gas path, increased residence time, higher surface area packing material and improved combustion catalysts. The cosponsor is working with an engineering form with oxidizer experience to reconfigure the hardware before moving to a field trial on landfill gas.

  4. Ultrafast terahertz gating of the polarization and giant nonlinear...

    Office of Scientific and Technical Information (OSTI)

    Bibtex Format Close 0 pages in this document matching the terms "" Search For Terms: Enter terms in the toolbar above to search the full text of this document for pages...

  5. METAL OXIDE NANOPARTICLES

    SciTech Connect (OSTI)

    FERNANDEZ-GARCIA,M.; RODGRIGUEZ, J.A.

    2007-10-01

    This chapter covers the fundamental science, synthesis, characterization, physicochemical properties and applications of oxide nanomaterials. Explains fundamental aspects that determine the growth and behavior of these systems, briefly examines synthetic procedures using bottom-up and top-down fabrication technologies, discusses the sophisticated experimental techniques and state of the art theory results used to characterize the physico-chemical properties of oxide solids and describe the current knowledge concerning key oxide materials with important technological applications.

  6. Barium oxide, calcium oxide, magnesia, and alkali oxide free glass

    DOE Patents [OSTI]

    Lu, Peizhen Kathy; Mahapatra, Manoj Kumar

    2013-09-24

    A glass composition consisting essentially of about 10-45 mole percent of SrO; about 35-75 mole percent SiO.sub.2; one or more compounds from the group of compounds consisting of La.sub.2O.sub.3, Al.sub.2O.sub.3, B.sub.2O.sub.3, and Ni; the La.sub.2O.sub.3 less than about 20 mole percent; the Al.sub.2O.sub.3 less than about 25 mole percent; the B.sub.2O.sub.3 less than about 15 mole percent; and the Ni less than about 5 mole percent. Preferably, the glass is substantially free of barium oxide, calcium oxide, magnesia, and alkali oxide. Preferably, the glass is used as a seal in a solid oxide fuel/electrolyzer cell (SOFC) stack. The SOFC stack comprises a plurality of SOFCs connected by one or more interconnect and manifold materials and sealed by the glass. Preferably, each SOFC comprises an anode, a cathode, and a solid electrolyte.

  7. Multi-images deconvolution improves signal-to-noise ratio on gated stimulated emission depletion microscopy

    SciTech Connect (OSTI)

    Castello, Marco; Diaspro, Alberto; Vicidomini, Giuseppe

    2014-12-08

    Time-gated detection, namely, only collecting the fluorescence photons after a time-delay from the excitation events, reduces complexity, cost, and illumination intensity of a stimulated emission depletion (STED) microscope. In the gated continuous-wave- (CW-) STED implementation, the spatial resolution improves with increased time-delay, but the signal-to-noise ratio (SNR) reduces. Thus, in sub-optimal conditions, such as a low photon-budget regime, the SNR reduction can cancel-out the expected gain in resolution. Here, we propose a method which does not discard photons, but instead collects all the photons in different time-gates and recombines them through a multi-image deconvolution. Our results, obtained on simulated and experimental data, show that the SNR of the restored image improves relative to the gated image, thereby improving the effective resolution.

  8. Shot noise in an electron waveguide square root of NOT gate

    E-Print Network [OSTI]

    Linda E. Reichl; Michael G. Snyder

    2006-01-17

    We present a calculation of the shot noise in a ballistic electron waveguide square root of NOT gate. A general expression for the shot noise in the leads connected to these types of gates is shown. We then parameterize an S-matrix which qualitatively describes the action of a square root of NOT gate previously found through numerical methods for GaAs/Al_xGa_{1-x}As based waveguides systems. Using this S-matrix, the shot noise in a single output lead and across two output leads is calculated. We find that the measurement of the shot noise across two output leads allows for the determination of the fidelity of the gate itself.

  9. Retrofit of Tehran City Gate Station C.G.S. No. 2 by Using Turboexpander 

    E-Print Network [OSTI]

    Seresht, R. T.; Ja, H. K.

    2010-01-01

    air components. 6. Liquefaction gases (like Helium). 7. Separating condensable components of natural gas. 8. Power generation from geothermal energy. Retrofit of Tehran City Gate Station C.G.S. No.2 by Using Turboexpander Yasun Farayand Company...

  10. Vehicle Technologies Office Merit Review 2015: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Office of Energy Efficiency and Renewable Energy (EERE)

    Presentation given by The Ohio State University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy...

  11. Improving Quantum Gate Fidelities by Using a Qubit to Measure Microwave Pulse Distortions

    E-Print Network [OSTI]

    Gustavsson, Simon

    We present a new method for determining pulse imperfections and improving the single-gate fidelity in a superconducting qubit. By applying consecutive positive and negative ? pulses, we amplify the qubit evolution due to ...

  12. Vehicle Technologies Office Merit Review 2015: GATE Center for Electric Drive Transportation

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  13. Vehicle Technologies Office Merit Review 2015: GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2015 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE center of excellence...

  14. Vehicle Technologies Office Merit Review 2014: DOE GATE Center of Excellence in Sustainable Vehicle Systems

    Broader source: Energy.gov [DOE]

    Presentation given by Clemson University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about DOE GATE Center of...

  15. Vehicle Technologies Office Merit Review 2014: GATE: Energy Efficient Vehicles for Sustainable Mobility

    Broader source: Energy.gov [DOE]

    Presentation given by Ohio State University at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE: energy efficient...

  16. CNT-based gas ionizers with integrated MEMS gate for portable mass spectrometry applications

    E-Print Network [OSTI]

    Velasquez-Garcia, Luis Fernando

    We report the fabrication and experimental characterization of a novel low-cost carbon nanotube (CNT)-based electron impact ionizer (EII) with integrated gate for portable mass spectrometry applications. The device achieves ...

  17. Energy-aware architectures, circuits and CAD for field programmable gate arrays

    E-Print Network [OSTI]

    Honoré, Francis

    2006-01-01

    Field Programmable Gate Arrays (FPGAs) are a class of hardware reconfigurable logic devices based on look-up tables (LUTs) and programmable interconnect that have found broad acceptance for a wide range of applications. ...

  18. Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

    E-Print Network [OSTI]

    J. T. Muhonen; A. Laucht; S. Simmons; J. P. Dehollain; R. Kalra; F. E. Hudson; S. Freer; K. M. Itoh; D. N. Jamieson; J. C. McCallum; A. S. Dzurak; A. Morello

    2014-10-09

    Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit.

  19. Electrolyte-gated graphene field-effect transistors : modeling and applications

    E-Print Network [OSTI]

    Mackin, Charles Edward

    2015-01-01

    This work presents a model for electrolyte-gated graphene field-effect transistors (EGFETs) that incorporates the effects of the double layer capacitance and the quantum capacitance of graphene. The model is validated ...

  20. 4th International Symposium on Advanced Gate Stack Technology

    E-Print Network [OSTI]

    Kummel, Andrew C.

    of adsorption. a: Calculated adsorption energies, Hads, are given with respect to the clean Ge(100)-4×2 surface. Hydrogen passivation of both oxygen and metal atoms was used to eliminate the density of states of electronic defects at these interface are problematic. We have performed a survey of potential ordered oxide

  1. Computational Model of Graphenen-Based Logic Gates and Architectures

    E-Print Network [OSTI]

    Yue, Kun

    2013-01-01

    graphene is a semi-metal or zero-gap semiconductor [1].Graphene-Based Non-Boolean Logic Circuit". arXiv: The International Technology Roadmap for Semiconductors,graphene-based analog logic circuits able to complement of complementary metal-oxide semiconductor (

  2. Mixed oxide solid solutions

    DOE Patents [OSTI]

    Magno, Scott (Dublin, CA); Wang, Ruiping (Fremont, CA); Derouane, Eric (Liverpool, GB)

    2003-01-01

    The present invention is a mixed oxide solid solution containing a tetravalent and a pentavalent cation that can be used as a support for a metal combustion catalyst. The invention is furthermore a combustion catalyst containing the mixed oxide solid solution and a method of making the mixed oxide solid solution. The tetravalent cation is zirconium(+4), hafnium(+4) or thorium(+4). In one embodiment, the pentavalent cation is tantalum(+5), niobium(+5) or bismuth(+5). Mixed oxide solid solutions of the present invention exhibit enhanced thermal stability, maintaining relatively high surface areas at high temperatures in the presence of water vapor.

  3. Metal oxide porous ceramic membranes with small pore sizes

    DOE Patents [OSTI]

    Anderson, Marc A. (Madison, WI); Xu, Qunyin (Madison, WI)

    1991-01-01

    A method is disclosed for the production of metal oxide ceramic membranes of very small pore size. The process is particularly useful in the creation of titanium and other transition metal oxide membranes. The method utilizes a sol-gel process in which the rate of particle formation is controlled by substituting a relatively large alcohol in the metal alkoxide and by limiting the available water. Stable, transparent metal oxide ceramic membranes are created having a narrow distribution of pore size, with the pore diameter being manipulable in the range of 5 to 40 Angstroms.

  4. Multi-qubit quantum phase gates based on surface plasmons of a nanosphere

    E-Print Network [OSTI]

    Jun Ren; Jun Yuan; Xiangdong Zhang

    2015-02-11

    The Dicke subradiance and superradiance resulting from the interaction between surface plasmons of a nanosphere and an ensemble of quantum emitters have been investigated using a Green function approach. Based on such an investigation, we propose a scheme for a deterministic multiqubit quantum phase gate. As an example, twoqubit, threequbit, and fourqubit quantum phase gates have been designed and analyzed in detail. Phenomena due to the losses in the metal are discussed. Potential applications of these phenomena to quantuminformation processing are anticipated.

  5. Multi-qubit quantum phase gates based on surface plasmons of a nanosphere

    E-Print Network [OSTI]

    Ren, Jun; Zhang, Xiangdong

    2015-01-01

    The Dicke subradiance and superradiance resulting from the interaction between surface plasmons of a nanosphere and an ensemble of quantum emitters have been investigated using a Green function approach. Based on such an investigation, we propose a scheme for a deterministic multiqubit quantum phase gate. As an example, twoqubit, threequbit, and fourqubit quantum phase gates have been designed and analyzed in detail. Phenomena due to the losses in the metal are discussed. Potential applications of these phenomena to quantuminformation processing are anticipated.

  6. Surround-gated vertical nanowire quantum dots M. H. M. van Weert,1

    E-Print Network [OSTI]

    arsenide phosphide InAsP quantum dots embedded in vertical surround-gated indium phosphide InP nanowires dots. The InAsP quantum dots, embedded in InP nanowires, are grown in the vapor-liquid-solid mode usingSurround-gated vertical nanowire quantum dots M. H. M. van Weert,1 M. den Heijer,1 M. P. van Kouwen

  7. Rooted-tree network for optimal non-local gate implementation

    E-Print Network [OSTI]

    Nilesh Vyas; Debashis Saha; Prasanta K. Panigrahi

    2015-06-28

    A general quantum network for implementing non-local control-unitary gates, between remote parties at minimal entanglement cost, is shown to be a rooted-tree structure. Starting from a five party scenario, we demonstrate the local implementation of simultaneous control-Hermitian and multiparty control-unitary gates in an arbitrary n-party network. Previously established networks are shown to be special cases of this general construct.

  8. Monolithic integration of rare-earth oxides and semiconductors for on-silicon technology

    SciTech Connect (OSTI)

    Dargis, Rytis, E-mail: dargis@translucentinc.com; Clark, Andrew; Erdem Arkun, Fevzi [Translucent, Inc., 952 Commercial St., Palo Alto, California 94303 (United States); Grinys, Tomas; Tomasiunas, Rolandas [Institute of Applied Research, Vilnius University, Sauletekio al. 10, LT-10223 Vilnius (Lithuania); O'Hara, Andy; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, 2515 Speedway, C1600, Austin, Texas 78712 (United States)

    2014-07-01

    Several concepts of integration of the epitaxial rare-earth oxides into the emerging advanced semiconductor on silicon technology are presented. Germanium grows epitaxially on gadolinium oxide despite lattice mismatch of more than 4%. Additionally, polymorphism of some of the rare-earth oxides allows engineering of their crystal structure from hexagonal to cubic and formation of buffer layers that can be used for growth of germanium on a lattice matched oxide layer. Molecular beam epitaxy and metal organic chemical vapor deposition of gallium nitride on the rare-earth oxide buffer layers on silicon is discussed.

  9. Magic State Distillation and Gate Compilation in Quantum Algorithms for Quantum Chemistry

    E-Print Network [OSTI]

    Colin J. Trout; Kenneth R. Brown

    2015-01-29

    Quantum algorithms for quantum chemistry map the dynamics of electrons in a molecule to the dynamics of a coupled spin system. To reach chemical accuracy for interesting molecules, a large number of quantum gates must be applied which implies the need for quantum error correction and fault-tolerant quantum computation. Arbitrary fault-tolerant operations can be constructed from a small, universal set of fault-tolerant operations by gate compilation. Quantum chemistry algorithms are compiled by decomposing the dynamics of the coupled spin-system using a Trotter formula, synthesizing the decomposed dynamics using Clifford operations and single-qubit rotations, and finally approximating the single-qubit rotations by a sequence of fault-tolerant single-qubit gates. Certain fault-tolerant gates rely on the preparation of specific single-qubit states referred to as magic states. As a result, gate compilation and magic state distillation are critical for solving quantum chemistry problems on a quantum computer. We review recent progress that has improved the efficiency of gate compilation and magic state distillation by orders of magnitude.

  10. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    SciTech Connect (OSTI)

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  11. Theory of signal and noise in double-gated nanoscale electronic pH sensors

    SciTech Connect (OSTI)

    Go, Jonghyun; Nair, Pradeep R.; Alam, Muhammad A.

    2012-08-01

    The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent 'super-Nernstian' response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as 'Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?' remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution.

  12. Interactions of Fe(II) with the iron oxidizing bacterium Rhodopseudomonas palustris TIE-1

    E-Print Network [OSTI]

    Bird, Lina J. (Lina Joana)

    2013-01-01

    Microbial anaerobic iron oxidation has long been of interest to biologists and geologists, both as a possible mechanism for the creation of banded iron formations before the rise of oxygen, and as a model system for organisms ...

  13. Surface binding vs. sequestration; the uptake of benzohydroxamic acid at iron(III) oxide surfaces 

    E-Print Network [OSTI]

    Tasker, Peter; Harris, S.G.; Brechin, E.K.; White, Fraser J; Rio-Echevarria I.M.

    2008-01-01

    Benzohydroxamic acid is shown to be an unexpectedly good ligand for iron(III) oxides, favouring surface attachment to the formation of trisbenzohydroxamato complexes, which are known to have very high thermodynamic stability ...

  14. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Garwin, Edward L. (Los Altos, CA); Nyaiesh, Ali R. (Palo Alto, CA)

    1988-01-01

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150.ANG. are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  15. Stabilized chromium oxide film

    DOE Patents [OSTI]

    Nyaiesh, A.R.; Garwin, E.L.

    1986-08-04

    Stabilized air-oxidized chromium films deposited on high-power klystron ceramic windows and sleeves having a thickness between 20 and 150A are useful in lowering secondary electron emission yield and in avoiding multipactoring and window failure due to overheating. The ceramic substrate for the film is chosen from alumina, sapphire or beryllium oxide.

  16. Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide

    E-Print Network [OSTI]

    Kim, Sehun

    Comparison of the Catalytic Oxidation Reaction on Graphene Oxide and Reduced Graphene Oxide catalytic systems.12,13 On the other hand, the reduced graphene oxide (rGO) is functionalized graphene Laboratory (PAL), Pohang 790-784, Republic of Korea ABSTRACT: The capacities of graphene oxide (GO

  17. Poly(cyclohexylethylene)-block-poly(ethylene oxide) block polymers for metal oxide templating

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Schulze, Morgan W.; Sinturel, Christophe; Hillmyer, Marc A.

    2015-09-01

    A series of poly(cyclohexylethylene)-block-poly(ethylene oxide) (CEO) diblock copolymers were synthesized through tandem anionic polymerizations and heterogeneous catalytic hydrogenation. Solvent-annealed CEO diblock films were used to template dense arrays of inorganic oxide nanodots via simple spin coating of an inorganic precursor solution atop the ordered film. The substantial chemical dissimilarity of the two blocks enables (i) selective inclusion of the inorganic precursor within the PEO domain and (ii) the formation of exceptionally small feature sizes due to a relatively large interaction parameter estimated from mean-field analysis of the order–disorder transition temperatures of compositionally symmetric samples. UV/ozone treatment following incorporation produces anmore »ordered arrangement of oxide nanodots and simultaneously removes the block polymer template. However, we report the smallest particles (6 ± 1 nm) templated from a selective precursor insertion method to date using a block polymer scaffold.« less

  18. Danish Solid Oxide Fuel Cell project: DK-SOFC 1997-1999

    E-Print Network [OSTI]

    Danish Solid Oxide Fuel Cell project: DK-SOFC 1997-1999 Contracts no. ENS 1443/97-0003, ENS 1443 the format of annual- and final reporting from the Danish Solid Oxide Fuel Cell projects. From then on materials and contacting to metallic interconnects in order to make a basis for further improvements

  19. Modeling the Oxidative Capacity of the Atmosphere of the South Coast

    E-Print Network [OSTI]

    Dabdub, Donald

    of the complex chemistry involving volatile organic compounds (VOCs) and oxides of nitrogen (NOx ) nitrogen oxide (NO) + nitrogen dioxide (NO2))(1).O3 productionisinitiatedbyreactionsthatgenerate HOx radicals Air Basin of California (SoCAB). P(O3) indicates the rapid nature of O3 formation under peak

  20. Formation of Iron Nanoparticles and Increase in Iron Reactivity in

    E-Print Network [OSTI]

    Benning, Liane G.

    each on presieved (goethite suspensions. Microscopic analyses of the processed soil and goethite samples reveal the neo-formation of Fe-rich nanoparticle aggregates, which were(III) oxide (mainly goethite or hematite) and clay minerals. At circumneutral pH, the solubility of Fe

  1. NEPTUNIUM OXIDE PROCESSING

    SciTech Connect (OSTI)

    Jordan, J; Watkins, R; Hensel, S

    2009-05-27

    The Savannah River Site's HB-Line Facility completed a campaign in which fifty nine cans of neptunium oxide were produced and shipped to the Idaho National Laboratory in the 9975 shipping container. The neptunium campaign was divided into two parts: Part 1 which consisted of oxide made from H-Canyon neptunium solution which did not require any processing prior to conversion into an oxide, and Part 2 which consisted of oxide made from additional H-Canyon neptunium solutions which required processing to purify the solution prior to conversion into an oxide. The neptunium was received as a nitrate solution and converted to oxide through ion-exchange column extraction, precipitation, and calcination. Numerous processing challenges were encountered in order make a final neptunium oxide product that could be shipped in a 9975 shipping container. Among the challenges overcome was the issue of scale: translating lab scale production into full facility production. The balance between processing efficiency and product quality assurance was addressed during this campaign. Lessons learned from these challenges are applicable to other processing projects.

  2. Time-gated single photon counting enables separation of CARS microscopy data from multiphoton-excited tissue autofluorescence

    E-Print Network [OSTI]

    Ly, Sonny; McNerney, Gregory; Chan, James; Fore, Samantha; Huser, Thomas

    2007-01-01

    Raman scattering microscopy (CARS): Instrumentation andanti-Stokes Raman scattering (CARS) imaging," Opt. Lett. 31,and separated from the CARS signal by employing time-gating

  3. Hydrogen Bond Networks in Graphene Oxide Composite Paper: Structure and

    E-Print Network [OSTI]

    Hydrogen Bond Networks in Graphene Oxide Composite Paper: Structure and Mechanical Properties of hydrogen bonds mediated by oxygen-containing functional groups and water molecules. A quantitative analysis of the formation of hydrogen bond networks further shows that they play a central role in *Address correspondence

  4. Scrolled Sheet Precursor Route to Niobium and Tantalum Oxide Nanotubes

    E-Print Network [OSTI]

    , this process remains limited in scope mainly to the formation of TiO2 nanotubes and to a single example with MnScrolled Sheet Precursor Route to Niobium and Tantalum Oxide Nanotubes Yoji Kobayashi, Hideo Hata Manuscript Received May 25, 2007 ABSTRACT The nanoscroll-to-nanotube thermal transformation was studied for H

  5. Planet formation and migration

    E-Print Network [OSTI]

    John C B Papaloizou; Caroline Terquem

    2005-11-28

    We review the observations of extrasolar planets, ongoing developments in theories of planet formation, orbital migration, and the evolution of multiplanet systems.

  6. Coupling of oxidative dehydrogenation and aromatization reactions of butane

    SciTech Connect (OSTI)

    Xu, Wen-Qing; Suib, S.L. )

    1994-01-01

    Coupling of oxidative dehydrogenation and aromatization of butane by using a dual function catalyst has led to a significant enhancement of the yields (from 25 to 40%) and selectivities to aromatics (from 39 to 64%). Butane is converted to aromatics by using either zinc-promoted [Ga]-ZSM-5 or zinc and gallium copromoted [Fe]-ZSM-5 zeolite as a catalyst. However, the formation of aromatics is severely limited by hydrocracking of butane to methane, ethane, and propane due to the hydrogen formed during aromatization reactions. On the other hand, the oxidative dehydrogenation of butane to butene over molybdate catalysts is found to be accompanied by a concurrent undesirable reaction, i.e., total oxidation. When two of these reactions (oxidative dehydrogenation and aromatization of butane) are coupled by using a dual function catalyst they have shown to complement each other. It is believed that the rate-limiting step for aromatization (butane to butene) is increased by adding an oxidative dehydrogenation catalyst (Ga-Zn-Mg-Mo-O). The formation of methane, ethane, and propane was suppressed due to the removal of hydrogen initially formed as water. Studies of ammonia TPD show that the acidities of [Fe]-ZSM-5 are greatly affected by the existence of metal oxides such as Ga[sub 2]O[sub 3], MgO, ZnO, and MoO[sub 3]. 40 refs., 9 figs., 1 tab.

  7. UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence

    SciTech Connect (OSTI)

    Erickson, Paul

    2012-05-31

    This is the final report of the UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence which spanned from 2005-2012. The U.S. Department of Energy (DOE) established the Graduate Automotive Technology Education (GATE) Program, to provide a new generation of engineers and scientists with knowledge and skills to create advanced automotive technologies. The UC Davis Fuel Cell, Hydrogen, and Hybrid Vehicle (FCH2V) GATE Center of Excellence established in 2005 is focused on research, education, industrial collaboration and outreach within automotive technology. UC Davis has had two independent GATE centers with separate well-defined objectives and research programs from 1998. The Fuel Cell Center, administered by ITS-Davis, has focused on fuel cell technology. The Hybrid-Electric Vehicle Design Center (HEV Center), administered by the Department of Mechanical and Aeronautical Engineering, has focused on the development of plug-in hybrid technology using internal combustion engines. The merger of these two centers in 2005 has broadened the scope of research and lead to higher visibility of the activity. UC Davisâ??s existing GATE centers have become the campusâ??s research focal points on fuel cells and hybrid-electric vehicles, and the home for graduate students who are studying advanced automotive technologies. The centers have been highly successful in attracting, training, and placing top-notch students into fuel cell and hybrid programs in both industry and government.

  8. Water gate array for current flow or tidal movement pneumatic harnessing system

    DOE Patents [OSTI]

    Gorlov, Alexander M. (Brookline, MA)

    1991-01-01

    The invention, which provides a system for harnessing power from current flow or tidal movement in a body of water, comprises first and second hydro-pneumatic chambers each having ingress and egress below the water surface near the river or ocean floor and water gates operative to open or seal the ports to the passage of water. In an exemplary embodiment, the gates are sychronized by shafts so that the ingress ports of each chamber are connected to the egress ports of each other chamber. Thus, one set of gates is closed, while the other is open, thereby allowing water to flow into one chamber and build air pressure therein and allowing water to flow out of the other chamber and create a partial vacuum therein. A pipe connects the chambers, and an air turbine harnesses the air movement within the pipe. When water levels are equilibrated, the open set of gates is closed by a counterweight, and the other set is allowed to open by natural force of the water differential. The water gates may be comprised of a plurality of louvers which are ganged for simultaneous opening and closing. The system is designed to operate with air turbines or other pneumatic devices. Its design minimizes construction cost and environmental impact, yet provides a clean renewable energy source.

  9. Support shape effect in metal oxide catalysis: ceria nanoshapes supported vanadia catalysts for oxidative dehydrogenation of iso-butane

    SciTech Connect (OSTI)

    Wu, Zili; Schwartz, Viviane; Li, Meijun; Rondinone, Adam Justin; Overbury, Steven {Steve} H

    2012-01-01

    The activation energy of VOx/CeO2 catalysts in oxidative dehydrogenation of iso-butane was found dependent on the shape of ceria support: rods < octahedra, closely related to the surface oxygen vacancy formation energy and defects amount of the two ceria supports with different crystallographic surface planes.

  10. Oxidative Tritium Decontamination System

    DOE Patents [OSTI]

    Gentile, Charles A. (Plainsboro, NJ), Guttadora, Gregory L. (Highland Park, NJ), Parker, John J. (Medford, NJ)

    2006-02-07

    The Oxidative Tritium Decontamination System, OTDS, provides a method and apparatus for reduction of tritium surface contamination on various items. The OTDS employs ozone gas as oxidizing agent to convert elemental tritium to tritium oxide. Tritium oxide vapor and excess ozone gas is purged from the OTDS, for discharge to atmosphere or transport to further process. An effluent stream is subjected to a catalytic process for the decomposition of excess ozone to diatomic oxygen. One of two configurations of the OTDS is employed: dynamic apparatus equipped with agitation mechanism and large volumetric capacity for decontamination of light items, or static apparatus equipped with pressurization and evacuation capability for decontamination of heavier, delicate, and/or valuable items.

  11. Controlled CO preferential oxidation

    DOE Patents [OSTI]

    Meltser, M.A.; Hoch, M.M.

    1997-06-10

    Method is described for controlling the supply of air to a PROX (PReferential OXidation for CO cleanup) reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference there between correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference. 2 figs.

  12. This study focuses on the methodology of generating and measuring HONO to study its potential formation from self-cleaning surfaces such as TiO2.

    E-Print Network [OSTI]

    Collins, Gary S.

    Vehicle emissions, when oxidized in the presence of NOx and sunlight, produce photochemical air pollution as a photocatalyst to oxidize surface absorbed compounds. It has been proposed that air pollution can be reduced pollution by increasing the formation arte of HO radical. The oxidation of VOCs by TiO2 can lead

  13. Nanocrystalline Complex Oxides Prepared by Mechanochemical Reactions

    SciTech Connect (OSTI)

    Sepelak, V. [Institute of Nanotechnology, Karlsruhe Institute of Technology, Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); On leave from the Slovak Academy of Sciences, Watsonova 45, 04353 Kosice (Slovakia); Bergmann, I. [VOLKSWAGEN AG, 38436 Wolfsburg (Germany); Indris, S. [Institute of Nanotechnology, Karlsruhe Institute of Technology, Herrmann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Subrt, J. [Institute of Inorganic Chemistry, Academy of Sciences of Czech Republic, 25068 Rez (Czech Republic); Heitjans, P. [Institute of Physical Chemistry and Electrochemistry, Leibniz University Hannover, Callinstrasse 3-3A, 30167 Hannover (Germany); Becker, K.-D. [Institute of Physical and Theoretical Chemistry, Braunschweig University of Technology, Hans-Sommer-Strasse 10, 38106 Braunschweig (Germany)

    2010-07-13

    The preparation of complex oxides by the conventional solid-state (ceramic) route requires a number of stages, including homogenization of the powder precursors, compaction of the reactants, and finally prolonged heat treatment at considerably elevated temperatures under controlled oxygen fugacity. One goal of modern materials research and development has been to identify simpler processing schemes that do not rely upon high-temperature treatments for inducing solid-state reactions. At present, mechanochemical methods become widely used for the preparation of nanocrystalline materials due to their relative simplicity and availability. In this work, selected examples of the preparation of nanoscale complex oxides via single-step mechanochemical routes are presented. Nuclear spectroscopic methods are employed to follow the mechanically induced formation of nanooxides and to characterize the nonequilibrium structural state of the resulting nanophases at the atomic level.

  14. Uranium in iron formations and the rise of atmospheric oxygen C.A. Partin a,

    E-Print Network [OSTI]

    Konhauser, Kurt

    Uranium in iron formations and the rise of atmospheric oxygen C.A. Partin a, , S.V. Lalonde b , N Paleoproterozoic Geochemical uranium cycle The concept of the Great Oxidation Event (GOE), during which atmospheric oxygenation through the record of uranium (U) concentrations in iron formations (IF). Just as IF are important

  15. X-ray study of the oxidation of liquid-gallium surfaces M. J. Regan,* H. Tostmann, and P. S. Pershan

    E-Print Network [OSTI]

    Pershan, Peter S.

    waves with temperatures up to only 443 K. This is a good indication that the oxide layer provides for the atomic arrangements in the gallium oxide layer and its interface with the underlying liquid. S0163 resistance arises from the natural formation of an inert oxide layer on its free surface.2 The study

  16. Intrinsic phonon decoherence and quantum gates in coupled lateral quantum dot charge qubits

    E-Print Network [OSTI]

    Markus J. Storcz; Udo Hartmann; Sigmund Kohler; Frank K. Wilhelm

    2005-07-28

    Recent experiments by Hayashi et al. [Phys. Rev. Lett. 91, 226804 (2003)] demonstrate coherent oscillations of a charge quantum bit (qubit) in laterally defined quantum dots. We study the intrinsic electron-phonon decoherence and gate performance for the next step: a system of two coupled charge qubits. The effective decoherence model contains properties of local as well as collective decoherence. Decoherence channels can be classified by their multipole moments, which leads to different low-energy spectra. It is shown that due to the super-Ohmic spectrum, the gate quality is limited by the single-qubit Hadamard gates. It can be significantly improved, by using double-dots with weak tunnel coupling.

  17. Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate

    DOE Patents [OSTI]

    Sappey, Andrew D. (Golden, CO)

    1998-04-14

    Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.

  18. Spintronic single qubit gate based on a quantum ring with spin-orbit interaction

    E-Print Network [OSTI]

    Peter Foldi; Balazs Molnar; Mihaly G. Benedict; F. M. Peeters

    2004-06-14

    In a quantum ring connected with two external leads the spin properties of an incoming electron are modified by the spin-orbit interaction resulting in a transformation of the qubit state carried by the spin. The ring acts as a one qubit spintronic quantum gate whose properties can be varied by tuning the Rashba parameter of the spin-orbit interaction, by changing the relative position of the junctions, as well as by the size of the ring. We show that a large class of unitary transformations can be attained with already one ring -- or a few rings in series -- including the important cases of the Z, X, and Hadamard gates. By choosing appropriate parameters the spin transformations can be made unitary, which corresponds to lossless gates.

  19. Coherent motion of stereocilia assures the concerted gating of hair-cell transduction channels

    E-Print Network [OSTI]

    Andrei S. Kozlov; Thomas Risler; A. J. Hudspeth

    2009-02-16

    The hair cell's mechanoreceptive organelle, the hair bundle, is highly sensitive because its transduction channels open over a very narrow range of displacements. The synchronous gating of transduction channels also underlies the active hair-bundle motility that amplifies and tunes responsiveness. The extent to which the gating of independent transduction channels is coordinated depends on how tightly individual stereocilia are constrained to move as a unit. Using dual-beam interferometry in the bullfrog's sacculus, we found that thermal movements of stereocilia located as far apart as a bundle's opposite edges display high coherence and negligible phase lag. Because the mechanical degrees of freedom of stereocilia are strongly constrained, a force applied anywhere in the hair bundle deflects the structure as a unit. This feature assures the concerted gating of transduction channels that maximizes the sensitivity of mechanoelectrical transduction and enhances the hair bundle's capacity to amplify its inputs.

  20. High fidelity ac gate operations of the quantum dot hybrid qubit

    E-Print Network [OSTI]

    Clement H. Wong

    2015-10-20

    Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at GHz gate speeds. We analyze the decoherence caused by 1/f charge noise in this qubit, find parameters that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.

  1. 60 nm gate length Al2O3 / In0.53Ga0.47As gate-first MOSFETs using InAs raised source-drain regrowth

    E-Print Network [OSTI]

    Rodwell, Mark J. W.

    plasma / trimethylaluminum (TMA) cycles. A 60 nm sputtered W/15 nm electron beam evaporated Cr/400 nm PECVD SiO2/15 nm electron beam evaporated Cr gate stack was blanket- deposited. Gate lengths between 60 and optical lithography. A high power inductively coupled (ICP) plasma SF6/Ar etch defined vertical pillars

  2. Contours of Race and Ethnicity: Institutional Context and Hmong American Students' Negotiations of Racial Formation in Higher Education

    E-Print Network [OSTI]

    Vue, Rican

    2013-01-01

    of California, Davis Bill and Melinda Gates MillenniumBill and Melinda Gates Millennium Scholar University of California, Davis

  3. Fabrication of a graphene-cuprous oxide composite

    SciTech Connect (OSTI)

    Xu Chao [Key Laboratory for Soft Chemistry and Functional Materials of Ministry Education, Nanjing University of Science and Technology, Nanjing 210094 (China); Wang Xin, E-mail: wxin@public1.ptt.js.c [Key Laboratory for Soft Chemistry and Functional Materials of Ministry Education, Nanjing University of Science and Technology, Nanjing 210094 (China); Yang Lichun; Wu Yuping [Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433 (China)

    2009-09-15

    A composite of graphene-cuprous oxide (Cu{sub 2}O) was prepared using copper acetate-adsorbed graphene oxide (GO) sheets as precursors. In this composite, in-situ formed Cu{sub 2}O particles were derived from the adsorbed copper acetate which attached to graphene sheets and prevented the aggregation of the reduced graphene oxide sheets. The as-synthesized Cu{sub 2}O crystals were cube-like particles distributed randomly on the sheets due to the template effect of GO, consequently forming a graphene-Cu{sub 2}O cubes composite. A preliminary study on the electrochemical behavior of the graphene-Cu{sub 2}O composite used as anode material for lithium ion batteries was carried out. - Abstract: The graphene oxide sheets are reduced and almost exfoliated due to the in-situ formation of Cu{sub 2}O crystals deriving from the adsorbed copper acetate. Display Omitted

  4. Trends and Challenges of SRAM Reliability in the Nano-scale Era

    E-Print Network [OSTI]

    problems [3]. The most critical reliability failure mechanisms for transistors are related to oxide layer (PMOS) transistor negative oxide field produce interface traps at silicon-oxide layers (Si-SiO2) inter across the gate oxide layer degrades the oxide material and results in the formation of conducting path

  5. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and foulingmore »is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.« less

  6. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    SciTech Connect (OSTI)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. In addition, the ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems1-10.But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries6,11–17, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable.Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state.Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold—the pressure needed to open the pores—can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping.These capabilities allow us to dynamically modulate gas–liquid sorting in a microfluidic flow and to separate a three-phase air water–oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  7. Photoluminescence study in diaminobenzene functionalized graphene oxide

    SciTech Connect (OSTI)

    Gupta, Abhisek, E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in; Saha, Shyamal K., E-mail: guptaabhisek017@gmail.com, E-mail: cnssks@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032 (India)

    2014-10-15

    Being an excellent electronic material graphene is a very poor candidate for optoelectronic applications. One of the major strategies to develop the optical property in GO is the functionalization of graphene oxide (GO). In the present work GO sheets are functionalized by o-phenylenediamine to achieve diaminobenzene functionalized GO composite (DAB-GO). Formation of DAB-GO composite is further characterized by FTIR, UV, Raman studies. Excellent photoluminescence is observed in DAB-GO composite via passivation of the surface reactive sites by ring-opening amination of epoxides of GO.

  8. Metal oxide membranes for gas separation

    DOE Patents [OSTI]

    Anderson, M.A.; Webster, E.T.; Xu, Q.

    1994-08-30

    A method for formation of a microporous ceramic membrane onto a porous support includes placing a colloidal suspension of metal oxide particles on one side of the porous support and exposing the other side of the porous support to a drying stream of gas or a reactive gas stream so that the particles are deposited on the drying side of the support as a gel. The gel so deposited can be sintered to form a supported ceramic membrane having mean pore sizes less than 30 Angstroms and useful for ultrafiltration, reverse osmosis, or gas separation. 4 figs.

  9. High quality HfO{sub 2}/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8?nm equivalent oxide thickness

    SciTech Connect (OSTI)

    Barth, Michael; Datta, Suman; Bruce Rayner, G.; McDonnell, Stephen; Wallace, Robert M.; Bennett, Brian R.; Engel-Herbert, Roman

    2014-12-01

    We investigate in-situ cleaning of GaSb surfaces and its effect on the electrical performance of p-type GaSb metal-oxide-semiconductor capacitor (MOSCAP) using a remote hydrogen plasma. Ultrathin HfO{sub 2} films grown by atomic layer deposition were used as a high permittivity gate dielectric. Compared to conventional ex-situ chemical cleaning methods, the in-situ GaSb surface treatment resulted in a drastic improvement in the impedance characteristics of the MOSCAPs, directly evidencing a much lower interface trap density and enhanced Fermi level movement efficiency. We demonstrate that by using a combination of ex-situ and in-situ surface cleaning steps, aggressively scaled HfO{sub 2}/p-GaSb MOSCAP structures with a low equivalent oxide thickness of 0.8?nm and efficient gate modulation of the surface potential are achieved, allowing to push the Fermi level far away from the valence band edge high up into the band gap of GaSb.

  10. Charging dynamics of a floating gate transistor with site-controlled quantum dots

    SciTech Connect (OSTI)

    Maier, P. Hartmann, F.; Emmerling, M.; Schneider, C.; Höfling, S.; Kamp, M.; Worschech, L.

    2014-08-04

    A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of ?s, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.

  11. Engineering a C-Phase quantum gate: optical design and experimental realization

    E-Print Network [OSTI]

    Andrea Chiuri; Chiara Greganti; Paolo Mataloni

    2012-04-12

    A two qubit quantum gate, namely the C-Phase, has been realized by exploiting the longitudinal momentum (i.e. the optical path) degree of freedom of a single photon. The experimental setup used to engineer this quantum gate represents an advanced version of the high stability closed-loop interferometric setup adopted to generate and characterize 2-photon 4-qubit Phased Dicke states. Some experimental results, dealing with the characterization of multipartite entanglement of the Phased Dicke states are also discussed in detail.

  12. Gate-Defined Wires in HgTe Quantum Wells: From Majorana Fermions to Spintronics Johannes Reuther and Jason Alicea

    E-Print Network [OSTI]

    Yacoby, Amir

    Gate-Defined Wires in HgTe Quantum Wells: From Majorana Fermions to Spintronics Johannes Reuther and various spintronics applications based on gate-defined wires in HgTe quantum wells. Because of the Dirac­15] architectures, while not usually viewed from a spintronics lens, similarly rely crucially on spin manipulation

  13. Ambipolar graphene field effect transistors by local metal side gates J. F. Tian,1,2,a

    E-Print Network [OSTI]

    Chen, Yong P.

    the Dirac point where the valence and conduction bands meet, making graphene a zero-gap semiconductor. BothAmbipolar graphene field effect transistors by local metal side gates J. F. Tian,1,2,a L. A ambipolar graphene field effect transistors individually controlled by local metal side gates. The side

  14. Electrical Modulation of Ion Concentration in Dual-Gated Nanochannels Yang Liu, Qiushi Ran, and Robert W. Dutton

    E-Print Network [OSTI]

    Liu, Yang

    Electrical Modulation of Ion Concentration in Dual-Gated Nanochannels Yang Liu, Qiushi Ran simulations demonstrate the operating principles of using electrical biases in dual-gated nano potential applications range from fuel cells [11] to desalination [12]. Nevertheless, in contrast

  15. High temperature stability in lanthanum and zirconia-based gate dielectrics J.-P. Maria,a)

    E-Print Network [OSTI]

    Garfunkel, Eric

    High temperature stability in lanthanum and zirconia-based gate dielectrics J.-P. Maria,a) D for publication 19 June 2001 Gate dielectrics composed primarily of lanthana and zirconia were prepared. By controlling the oxygen partial pressure during heat treatment, lanthana and zirconia films could be protected

  16. The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

    E-Print Network [OSTI]

    Tobin, Roger G.

    active transition metals such as platinum and palladium, show great promise as sen- sors for hydrogenThe role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh with nonporous platinum gates. The devices studied are shown to be sensitive both to hydrogen and to propene. All

  17. The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

    E-Print Network [OSTI]

    Ghosh, Ruby N.

    active transition metals such as platinum and palladium, show great promise as sen- sors for hydrogenThe role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study Yung

  18. Possible realization of entanglement, logical gates, and quantum-information transfer with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2003-04-17

    We present a scheme to achieve maximally entangled states, controlled phase-shift gate, and SWAP gate for two superconducting-quantum-interference-device (SQUID) qubits, by placing SQUIDs in a microwave cavity. We also show how to transfer quantum...

  19. An energy relaxation tolerant approach to quantum entanglement, information transfer, and gates with superconducting-quantum-interference-device qubits in cavity QED

    E-Print Network [OSTI]

    Yang, Chui-Ping; Chu, Shih-I; Han, Siyuan

    2004-03-31

    A scheme is proposed for realizing quantum entanglement, information transfer, CNOT gates, and SWAP gates with supercoiiducting-quantum-interference-device (SQUID) qubits in cavity QED. In the scheme, the two logical states of a qubit are the two...

  20. (Non) formation of methanol by direct hydrogenation of formate on copper catalysts

    SciTech Connect (OSTI)

    Yang, Yong; Mims, Charles A.; Disselkamp, Robert S.; Kwak, Ja Hun; Peden, Charles HF; Campbell, C. T.

    2010-10-14

    We have attempted to hydrogenate adsorbed formate species on copper catalysts to probe the importance of this postulated mechanistic step in methanol synthesis. Surface formate coverages up to 0.25 were produced at temperatures between 413K and 453K on supported (Cu/SiO2) copper and unsupported copper catalysts. The adlayers were produced by various methods including (1) steady state catalytic conditions in CO2-H2 (3:1, 6 bar) atmospheres, and (2) by exposure of the catalysts to formic acid. As reported in earlier work, the catalytic surface at steady state contains bidentate formate species with coverages up to saturation levels of ~ 0.25 at the low temperatures of this study. The reactivity of these formate adlayers was investigated at relevant reaction temperatures in atmospheres containing up to 6 bar H2 partial pressure by simultaneous mass spectrometry (MS) and infrared (IR) spectroscopy measurements. The yield of methanol during the attempted hydrogenation (“titration”) of these adlayers was insignificant (<0.2 mol % of the formate adlayer) even in dry hydrogen partial pressures up to 6 bar. Hydrogen titration of formate species produced from formic acid also failed to produce significant quantities of methanol, and attempted titration in gases consisting of CO-hydrogen mixtures or dry CO2 were also unproductive. The formate decomposition kinetics, measured by IR, were also unaffected by these changes in the gas composition. Similar experiments on unsupported copper also failed to show any methanol. From these results, we conclude that methanol synthesis on copper cannot result from the direct hydrogenation of (bidentate) formate species in simple steps involving adsorbed H species alone. Furthermore, experiments performed on both supported (Cu/SiO2) and unsupported copper catalysts gave similar results implying that the methanol synthesis reaction mechanism only involves metal surface chemistry. Pre-exposure of the bidentate formate adlayer to oxidation by O2 or N2O produces a change to a monodentate configuration. Attempted titration of this monodentate formate/O coadsorbed layer in dry hydrogen produces significant quantities of methanol, although decomposition of formate to carbon dioxide and hydrogen remains the dominant reaction pathway. Simultaneous production of water is also observed during this titration as the copper surface is re-reduced. These results indicate that co-adsorbates related to surface oxygen or water-derived species may be critical to methanol production on copper, perhaps assisting in the hydrogenation of adsorbed formate to adsorbed methoxyl.

  1. Notes on Star Formation

    E-Print Network [OSTI]

    Krumholz, Mark R

    2015-01-01

    This book provides an introduction to the field of star formation at a level suitable for graduate students or advanced undergraduates in astronomy or physics. The structure of the book is as follows. The first two chapters begin with a discussion of observational techniques, and the basic phenomenology they reveal. The goal is to familiarize students with the basic techniques that will be used throughout, and to provide a common vocabulary for the rest of the book. The next five chapters provide a similar review of the basic physical processes that are important for star formation. Again, the goal is to provide a basis for what follows. The remaining chapters discuss star formation over a variety of scales, starting with the galactic scale and working down to the scales of individual stars and their disks. The book concludes with a brief discussion of the clearing of disks and the transition to planet formation. The book includes five problem sets, complete with solutions.

  2. Word formation in Thadou

    E-Print Network [OSTI]

    Haokip, Pauthang

    2014-01-01

    As stated above, compound words of Thadou are mostlyNote that the resulting new words are always nouns. a. b. c.bad’ (negative) Haokip: Word formation in Thadou a. â-sâa ?

  3. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    1999-01-01

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  4. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, Shabbir (Bolingbrook, IL); Kumar, Romesh (Naperville, IL); Krumpelt, Michael (Naperville, IL)

    2001-01-01

    A partial oxidation reformer comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell.

  5. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-24

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  6. Methanol partial oxidation reformer

    DOE Patents [OSTI]

    Ahmed, S.; Kumar, R.; Krumpelt, M.

    1999-08-17

    A partial oxidation reformer is described comprising a longitudinally extending chamber having a methanol, water and an air inlet and an outlet. An igniter mechanism is near the inlets for igniting a mixture of methanol and air, while a partial oxidation catalyst in the chamber is spaced from the inlets and converts methanol and oxygen to carbon dioxide and hydrogen. Controlling the oxygen to methanol mole ratio provides continuous slightly exothermic partial oxidation reactions of methanol and air producing hydrogen gas. The liquid is preferably injected in droplets having diameters less than 100 micrometers. The reformer is useful in a propulsion system for a vehicle which supplies a hydrogen-containing gas to the negative electrode of a fuel cell. 7 figs.

  7. Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

    SciTech Connect (OSTI)

    Jo, Jeong-Wan; Park, Sung Kyu E-mail: skpark@cau.ac.kr; Kim, Yong-Hoon E-mail: skpark@cau.ac.kr

    2014-07-28

    In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

  8. An integrated approach to predict ettringite formation in sulfate soils and identifying sulfate damage along SH 130 

    E-Print Network [OSTI]

    Sachin, Kunagalli Natarajan

    2005-02-17

    Expansive soils are treated with anhydrous or hydrated lime. The use of calcium-based stabilizers such as calcium oxide (lime) in sulfate-bearing clay soils has historically led to distress due to the formation of an ...

  9. Tetraalykylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, Paul E. (Downingtown, PA); Lyons, James E. (Wallingford, PA); Myers, Jr., Harry K. (Cochranville, PA); Shaikh, Shahid N. (Media, PA)

    1998-01-01

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H.sub.e-z ›(n-C.sub.4 H.sub.9).sub.4 N!.sub.z (XM.sub.11 M'O.sub.39).sup.-e The M' (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  10. Tetraalklylammonium polyoxoanionic oxidation catalysts

    DOE Patents [OSTI]

    Ellis, P.E.; Lyons, J.E.; Myers, H.K. Jr.; Shaikh, S.N.

    1998-10-06

    Alkanes are catalytically oxidized in air or oxygen using iron-substituted polyoxoanions (POAs) of the formula: H{sub e{minus}z}[(n-C{sub 4}H{sub 9}){sub 4}N]{sub z}(XM{sub 11}M{prime}O{sub 39}){sup {minus}e}. The M{prime} (e.g., iron(III)/iron(II)) reduction potential of the POAs is affected by selection of the central atom X and the framework metal M, and by the number of tetrabutyl-ammonium groups. Decreased Fe(III)/Fe(II) reduction potential has been found to correlate to increased oxidation activity.

  11. Formation of hollow nanocrystals through the nanoscale kirkendall effect

    SciTech Connect (OSTI)

    Yin, Yadong; Rioux, Robert M.; Erdonmez, Can K.; Hughes, Steven; Somorjai, Gabor A.; Alivisatos, A. Paul

    2004-03-11

    We demonstrate that hollow nanocrystals can be synthesized through a mechanism analogous to the Kirkendall Effect, in which pores form due to the difference in diffusion rates between two components in a diffusion couple. Cobalt nanocrystals are chosen as a primary example to show that their reaction in solution with oxygen, sulfur or selenium leads to the formation of hollow nanocrystals of the resulting oxide and chalcogenides. This process provides a general route to the synthesis of hollow nanostructures of large numbers of compounds. A simple extension of this process yields platinum-cobalt oxide yolk-shell nanostructures which may serve as nanoscale reactors in catalytic applications.

  12. Temperature-Gated Thermal Rectifier for Active Heat Flow Control Kedar Hippalgaonkar,,

    E-Print Network [OSTI]

    Wu, Junqiao

    Temperature-Gated Thermal Rectifier for Active Heat Flow Control Jia Zhu,, Kedar Hippalgaonkar to develop advanced all-thermal solid-state devices that actively control heat flow without consuming other of solid-state active-thermal devices with a large rectification in the Rectifier state. This temperature

  13. Method and system for measuring gate valve clearances and seating force

    DOE Patents [OSTI]

    Casada, Donald A. (Knoxville, TN); Haynes, Howard D. (Knoxville, TN); Moyers, John C. (Oak Ridge, TN); Stewart, Brian K. (Burns, TN)

    1996-01-01

    Valve clearances and seating force, as well as other valve operational parameters, are determined by measuring valve stem rotation during opening and closing operations of a translatable gate valve. The magnitude of the stem rotation, and the relative difference between the stem rotation on opening and closing provides valuable data on the valve internals in a non-intrusive manner.

  14. Low-frequency electronic noise in the double-gate single-layer graphene transistors

    E-Print Network [OSTI]

    Low-frequency electronic noise in the double-gate single-layer graphene transistors G. Liu,1 W The authors report the results of an experimental investigation of the low-frequency noise in the double by 20 nm of HfO2 from the single-layer graphene channels. The measurements revealed low flicker noise

  15. Respiratory gating of anatomical optical coherence tomography images of the human

    E-Print Network [OSTI]

    Daume III, Hal

    , N. Zamel, and V. Hoffstein, "Pharyngeal cross-sectional area in normal men and women," J. Appl. Physiol. 61, 890-895 (1986). 8. P. P. Hsu, H. N. C. Han, Y. H. Chan, H. N. Tay, R. H. Brett, P. K. S. Lu demonstration of respiratory gating of aOCT airway data, and introduces a novel error measure to guide

  16. Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal

    E-Print Network [OSTI]

    Swaminathan, Madhavan

    Implementation of Power Transmission Lines to Field Programmable Gate Array ICs for Managing Signal employs power transmission lines (PTL) that supply power to integrated circuits instead of using is able to reduce SSN and enhance power and signal integrity. Pseudo-balanced power transmission line (PB

  17. NASA VLSI 2007 Mohanty & Kougianos 1 Impact of Gate Leakage on Mixed Signal

    E-Print Network [OSTI]

    Mohanty, Saraju P.

    NASA VLSI 2007 Mohanty & Kougianos 1 Impact of Gate Leakage on Mixed Signal Design and Simulation dhruva@unt.edu #12;NASA VLSI 2007 Mohanty & Kougianos 2 Outline of the Talk Introduction Related works Remedy Conclusions #12;NASA VLSI 2007 Mohanty & Kougianos 3 Introduction Characterization of mixed signal

  18. Na K -pump ligands modulate gating of palytoxin-induced ion channels

    E-Print Network [OSTI]

    Gadsby, David

    Na K -pump ligands modulate gating of palytoxin-induced ion channels Pablo Artigas and David C (received for review September 26, 2002) The Na K pump is a ubiquitous P-type ATPase that binds three -ion occlusion to phosphorylation of the pump by ATP and of K -ion occlusion to its dephosphorylation

  19. Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors

    E-Print Network [OSTI]

    Dekker, Cees

    Influence of Electrolyte Composition on Liquid-Gated Carbon Nanotube and Graphene Transistors Iddo-walled carbon nanotubes (SWNTs) and graphene can function as highly sensitive nanoscale (bio)sensors in solution. Here, we compare experimentally how SWNT and graphene transistors respond to changes in the composition

  20. Increasing efficiency of a linear-optical quantum gate using an electronic feed forward

    E-Print Network [OSTI]

    Mikova, Martina; Straka, Ivo; Micuda, Michal; Jezek, Miroslav; Dusek, Miloslav

    2011-01-01

    We have successfully used a fast electronic feed forward to increase the success probability of a linear optical implementation of a programmable phase gate from 25% to its theoretical limit of 50%. The feed forward applies a conditional unitary operation which changes the incorrect output states of the data qubit to the correct ones. The gate itself rotates an arbitrary quantum state of the data qubit around the z-axis of the Bloch sphere with the angle of rotation being fully determined by the state of the program qubit. The gate implementation is based on fiber optics components. Qubits are encoded into spatial modes of single photons. The signal from the feed-forward detector is led directly to a phase modulator using only a passive voltage divider. We have verified the increase of the success probability and characterized the gate operation by means of quantum process tomography. We have demonstrated that the use of the feed forward does not affect either the process fidelity or the output-state fideliti...

  1. Increasing efficiency of a linear-optical quantum gate using an electronic feed forward

    E-Print Network [OSTI]

    Martina Mikova; Helena Fikerova; Ivo Straka; Michal Micuda; Miroslav Jezek; Miloslav Dusek

    2011-11-14

    We have successfully used a fast electronic feed forward to increase the success probability of a linear optical implementation of a programmable phase gate from 25% to its theoretical limit of 50%. The feed forward applies a conditional unitary operation which changes the incorrect output states of the data qubit to the correct ones. The gate itself rotates an arbitrary quantum state of the data qubit around the z-axis of the Bloch sphere with the angle of rotation being fully determined by the state of the program qubit. The gate implementation is based on fiber optics components. Qubits are encoded into spatial modes of single photons. The signal from the feed-forward detector is led directly to a phase modulator using only a passive voltage divider. We have verified the increase of the success probability and characterized the gate operation by means of quantum process tomography. We have demonstrated that the use of the feed forward does not affect either the process fidelity or the output-state fidelities.

  2. Piezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing

    E-Print Network [OSTI]

    Huang, Yanyi

    -standing piezoelectric FET has potential applications like hearing aids, atomic force microscopy (AFM) cantileversPiezoelectric Potential Gated Field-Effect Transistor Based on a Free-Standing ZnO Wire Peng Fei report an external force triggered field-effect transistor based on a free-standing piezoelectric fine

  3. Fast gating in the Shaker K channel and the energy landscape of activation

    E-Print Network [OSTI]

    Bezanilla, Francisco

    Fast gating in the Shaker K channel and the energy landscape of activation Daniel Sigg , Francisco sec has been recorded with a high-speed patch­clamp setup. This fast component was found to be part-landscape inter- pretation of protein kinetics, the voltage and temperature depen- dence of the fast component may

  4. QualityGate SourceAudit: A Tool for Assessing the Technical Quality of Software

    E-Print Network [OSTI]

    Ferenc, Rudolf

    QualityGate SourceAudit: A Tool for Assessing the Technical Quality of Software Tibor Bakota Front the internal quality of the system over time. This phenomena is called software erosion, which results assessment of software quality. By monitoring the high-level technical quality of systems it is possible

  5. ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title

    E-Print Network [OSTI]

    1 Title: ERK2: a logical AND gate critical for drug-induced plasticity? Truncated title: ERK2 signal-regulated kinase (ERK) plays an important role in the underlying molecular mechanisms. ERK. Blockade of ERK activation prevents long- lasting behavioral changes, including psychomotor sensitization

  6. A scalable quantum gate design for quantum computation I. A. Fedorov,1

    E-Print Network [OSTI]

    Ferguson, Thomas S.

    a scalable design for a quantum gate based on an electrostatically defined InP/InGaAs quantum dot system the artificial structures consisting of an array of quantum dots (QDs) at the required dimensions. With each QDP/InGaAs vertical quantum dot (QD) structure and investigate it in the few-electron regime for possible quan- tum

  7. Structural and electrical characterization of CoTiN metal gates

    SciTech Connect (OSTI)

    Wongpiya, Ranida; Ouyang, Jiaomin; Chung, Chia-Jung; Duong, Duc T.; Clemens, Bruce; Deal, Michael; Nishi, Yoshio

    2015-02-21

    As the gate size continues to decrease in nanoscale transistors, having metal gates with amorphous or near amorphous structures can potentially reduce grain-induced work function variation. Furthermore, amorphous materials are known to have superior diffusion barrier properties, which can help prevent work function change due to the diffusion of metals in contact with the gate. In this work we show that with the addition of cobalt, thin films of polycrystalline TiN become more amorphous with a smaller grain size. Co{sub x}(TiN){sub 1-x} films, where x?=?60–80%, appear to consist of nanocrystals embedded in an amorphous matrix, and are thermally stable with no significant crystallization up to an annealing temperature of at least 600?°C. Reducing the nitrogen gas flow ratio during sputter deposition from 9% to 2.5% further decreases the films' crystallinity, which is apparent by more sparse and even smaller nanocrystals. In addition to being partially amorphous, these CoTiN films also exhibit good thermal stability, low resistivity, low roughness, and have the potential for atomic layer deposition compatibility. Even though these materials are not completely amorphous, their small crystal size and amorphous matrix can potentially reduce work function variation and improve their diffusion barrier property. These properties make CoTiN a good candidate as a gate material for future nanoelectronic devices and technology.

  8. Gate Sizing and Vth Assignment for Asynchronous Circuits Using Lagrangian Relaxation

    E-Print Network [OSTI]

    Chu, Chris C.-N.

    constraints are beyond the ability of synchronous EDA tools to handle thus inferior results are generated performance. Recent asynchronous design flows try to directly leverage synchronous EDA tools to select gates, which have a lot of limitations due to the intrinsic difference between asynchronous and synchronous

  9. Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints

    E-Print Network [OSTI]

    Kolodny, Avinoam

    Finding the Energy Efficient Curve: Gate Sizing for Minimum Power under Delay Constraints Yoni in a fast circuit by the same factor does not yield an energy-efficient design, and we characterize efficient. A design implementation is considered to be energy efficient when it has the highest performance

  10. Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate

    E-Print Network [OSTI]

    Paris-Sud XI, Université de

    Title: Hydraulic modeling of a mixed water level control hydro-mechanical gate Ludovic Cassan1 Abstract: The article describes the hydraulic functioning of a mixed water level control hydro- mechanical of the model to reproduce the functioning of this complex hydro-mechanical system. CE database Subject headings

  11. An AggreGATE Network Abstraction for Mobile Devices Ganesh Ananthanarayanan, David Zats

    E-Print Network [OSTI]

    California at Berkeley, University of

    An AggreGATE Network Abstraction for Mobile Devices Ganesh Ananthanarayanan, David Zats Motivation Mobile devices increasingly have multiple interfaces (Cellular, Wi-Fi, Bluetooth) Proliferation of mobile decisions at the proxy/mobile device (Power, Cost ($$)) Single mobile device: Uploads to server using proxy

  12. CONGRESS BEIJING 2000 Question 79 (Gated Spillways and Other Controlled Release Facilities, and Dam Safety)

    E-Print Network [OSTI]

    Rahmeyer, William J.

    Facilities, and Dam Safety) d) Rehabilitation of Gated and Ungated Spillways THE DESIGN OF A FUSEGATE SYSTEM FOR INCREASING THE RESERVOIR CAPACITY OF TERMINUS DAM AIDED BY A FULLY FUNCTIONING PHYSICAL MODEL STUDY" Authors International SUMMARY A number of designs for increasing reservoir capacity without raising the dam embankment

  13. Electric field gating with ionic liquids Rajiv Misra, Mitchell McCarthy, and Arthur F. Hebarda

    E-Print Network [OSTI]

    Hebard, Arthur F.

    of 104 for thin conducting InOx films. The areal capacitances and field effect mobilities noticeably dielectrics and show that a significant field-gate effect on thin films of amor- phous composite InOx can material is a non- porous continuous thin metal film such as low carrier density InOx,10 then excess charge

  14. Gate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006 Conference Page 1

    E-Print Network [OSTI]

    Bowles, David S.

    then completed using risk-based design criteria to validate the design, and construction is in progress throughout Australia, the standard of safety was evaluated using a risk-based design validation modelGate Reliability Assessment for a Spillway Upgrade Design in Queensland, Australia USSD 2006

  15. Nanostructured transition metal oxides useful for water oxidation catalysis

    DOE Patents [OSTI]

    Frei, Heinz M; Jiao, Feng

    2013-12-24

    The present invention provides for a composition comprising a nanostructured transition metal oxide capable of oxidizing two H.sub.2O molecules to obtain four protons. In some embodiments of the invention, the composition further comprises a porous matrix wherein the nanocluster of the transition metal oxide is embedded on and/or in the porous matrix.

  16. Oxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide

    E-Print Network [OSTI]

    Collins, Gary S.

    molybdenum dioxide displays excellent behavior as catalytic material for the oxidative reforming of bothOxidative Reforming of Biodiesel Over Molybdenum (IV) Oxide Jessica Whalen, Oscar Marin Flores, Su candidate as an effective catalyst for biodiesel. Few papers have been published on the topic of catalytic

  17. Fabrication and testing of oxidized porous silicon field emitter strips 

    E-Print Network [OSTI]

    Madduri, Vasanta Bhanu

    1992-01-01

    28 30 15. Reaction Cell for Anodization 32 16. 17. Cross-section of a Porous Silicon Field Emitting Strip Ctoss-section of the Anode Tester 34 36 LIST OF FIGURES (Continued) Figure 18. Testing Set-up for the Diode Arrays 19. I-V Curves... electrolyte in place of HF. In this process of oxide formation the oxide is formed at the bottom of the porous layer. The top PS layer can be recrystallized by high temperature annealing or laser processing. Light Emitting Porous Silicon Attempts to use...

  18. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, Jr., Wesley D. (Oak Ridge, TN); Bond, Walter D. (Knoxville, TN); Lauf, Robert J. (Oak Ridge, TN)

    1993-01-01

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel.

  19. Doped zinc oxide microspheres

    DOE Patents [OSTI]

    Arnold, W.D. Jr.; Bond, W.D.; Lauf, R.J.

    1993-12-14

    A new composition and method of making same for a doped zinc oxide microsphere and articles made therefrom for use in an electrical surge arrestor which has increased solid content, uniform grain size and is in the form of a gel. 4 figures.

  20. Conformations of Organophosphine Oxides

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    De Silva, Nuwan; Zahariev, Federico; Hay, Benjamin P.; Gordon, Mark S.; Windus, Theresa L.

    2015-07-29

    The conformations of a series of organophosphine oxides, OP(CH3)2R, where R = methyl, ethyl, isopropyl, tert-butyl, vinyl, and phenyl, are predicted using the MP2/cc-pVTZ level of theory. Comparison of potential energy surfaces for rotation about P–C bonds with crystal structure data reveals a strong correlation between predicted location and energetics of minima and histograms of dihedral angle distributions observed in the solid state. In addition, the most stable conformers are those that minimize the extent of steric repulsion between adjacent rotor substituents, and the torsional barriers tend to increase with the steric bulk of the rotating alkyl group. MM3 forcemore »field parameters were adjusted to fit the MP2 results, providing a fast and accurate model for predicting organophosphine oxides shapes—an essential part of understanding the chemistry of these compounds. The predictive power of the modified MM3 model was tested against MP2/cc-pVTZ conformations for triethylphosphine oxide, OP(CH2CH3)3, and triphenylphosphine oxide, OP(Ph)3.« less

  1. Complex catalytic behaviors of CuTiOx mixed-oxide during CO oxidation

    DOE Public Access Gateway for Energy & Science Beta (PAGES Beta)

    Kim, Hyun You; Liu, Ping

    2015-09-21

    Mixed metal oxides have attracted considerable attention in heterogeneous catalysis due to the unique stability, reactivity, and selectivity. Here, the activity and stability of the CuTiOx monolayer film supported on Cu(111), CuTiOx/Cu(111), during CO oxidation was explored using density functional theory (DFT). The unique structural frame of CuTiOx is able to stabilize and isolate a single Cu+ site on the terrace, which is previously proposed active for CO oxidation. Furthermore, it is not the case, where the reaction via both the Langmuir–Hinshelwood (LH) and the Mars-van Krevelen (M-vK) mechanisms are hindered on such single Cu+ site. Upon the formation ofmore »step-edges, the synergy among Cu?+ sites, TiOx matrix, and Cu(111) is able to catalyze the reaction well. Depending on temperatures and partial pressure of CO and O2, the surface structure varies, which determines the dominant mechanism. In accordance with our results, the Cu?+ ion alone does not work well for CO oxidation in the form of single sites, while the synergy among multiple active sites is necessary to facilitate the reaction.« less

  2. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2012-09-11

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  3. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2014-05-20

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  4. Staged membrane oxidation reactor system

    DOE Patents [OSTI]

    Repasky, John Michael; Carolan, Michael Francis; Stein, VanEric Edward; Chen, Christopher Ming-Poh

    2013-04-16

    Ion transport membrane oxidation system comprising (a) two or more membrane oxidation stages, each stage comprising a reactant zone, an oxidant zone, one or more ion transport membranes separating the reactant zone from the oxidant zone, a reactant gas inlet region, a reactant gas outlet region, an oxidant gas inlet region, and an oxidant gas outlet region; (b) an interstage reactant gas flow path disposed between each pair of membrane oxidation stages and adapted to place the reactant gas outlet region of a first stage of the pair in flow communication with the reactant gas inlet region of a second stage of the pair; and (c) one or more reactant interstage feed gas lines, each line being in flow communication with any interstage reactant gas flow path or with the reactant zone of any membrane oxidation stage receiving interstage reactant gas.

  5. REVIEW OF PLUTONIUM OXIDATION LITERATURE

    SciTech Connect (OSTI)

    Korinko, P.

    2009-11-12

    A brief review of plutonium oxidation literature was conducted. The purpose of the review was to ascertain the effect of oxidation conditions on oxide morphology to support the design and operation of the PDCF direct metal oxidation (DMO) furnace. The interest in the review was due to a new furnace design that resulted in oxide characteristics that are different than those of the original furnace. Very little of the published literature is directly relevant to the DMO furnace operation, which makes assimilation of the literature data with operating conditions and data a convoluted task. The oxidation behavior can be distilled into three regimes, a low temperature regime (RT to 350 C) with a relatively slow oxidation rate that is influenced by moisture, a moderate temperature regime (350-450 C) that is temperature dependent and relies on more or less conventional oxidation growth of a partially protective oxide scale, and high temperature oxidation (> 500 C) where the metal autocatalytically combusts and oxidizes. The particle sizes obtained from these three regimes vary with the finest being from the lowest temperature. It is surmised that the slow growth rate permits significant stress levels to be achieved that help break up the oxides. The intermediate temperatures result in a fairly compact scale that is partially protective and that grows to critical thickness prior to fracturing. The growth rate in this regime may be parabolic or paralinear, depending on the oxidation time and consequently the oxide thickness. The high temperature oxidation is invariant in quiescent or nearly quiescent conditions due to gas blanketing while it accelerates with temperature under flowing conditions. The oxide morphology will generally consist of fine particles (<15 {micro}m), moderately sized particles (15 < x < 250 {micro}m) and large particles (> 250 {micro}m). The particle size ratio is expected to be < 5%, 25%, and 70% for fine, medium and large particles, respectively, for metal temperatures in the 500-600 C range.

  6. Doped palladium containing oxidation catalysts

    DOE Patents [OSTI]

    Mohajeri, Nahid

    2014-02-18

    A supported oxidation catalyst includes a support having a metal oxide or metal salt, and mixed metal particles thereon. The mixed metal particles include first particles including a palladium compound, and second particles including a precious metal group (PMG) metal or PMG metal compound, wherein the PMG metal is not palladium. The oxidation catalyst may also be used as a gas sensor.

  7. SU-E-J-185: Gated CBCT Imaging for Positioning Moving Lung Tumor in Lung SBRT Treatment

    SciTech Connect (OSTI)

    Li, X; Li, T; Zhang, Y; Burton, S; Karlovits, B; Clump, D; Heron, D; Huq, M

    2014-06-01

    Purpose: Lung stereo-tactic body radiotherapy(SBRT) treatment requires high accuracy of lung tumor positioning during treatment, which is usually accomplished by free breathing Cone-Beam computerized tomography (CBCT) scan. However, respiratory motion induced image artifacts in free breathing CBCT may degrade such positioning accuracy. The purpose of this study is to investigate the feasibility of gated CBCT imaging for lung SBRT treatment. Methods: Six Lung SBRT patients were selected for this study. The respiratory motion of the tumors ranged from 1.2cm to 3.5cm, and the gating windows for all patients were set between 35% and 65% of the respiratory phases. Each Lung SBRT patient underwent free-breathing CBCT scan using half-fan scan technique. The acquired projection images were transferred out for off-line analyses. An In-house semi-automatic algorithm was developed to trace the diaphragm movement from those projection images to acquire a patient's specific respiratory motion curve, which was used to correlate respiratory phases with each projection image. Afterwards, a filtered back-projection algorithm was utilized to reconstruct the gated CBCT images based on the projection images only within the gating window. Results: Target volumes determined by free breathing CBCT images were 71.9%±72% bigger than the volume shown in gated CBCT image. On the contrary, the target volume differences between gated CBCT and planning CT images at exhale stage were 5.8%±2.4%. The center to center distance of the targets shown in free breathing CBCT and gated CBCT images were 9.2±8.1mm. For one particular case, the superior boundary of the target was shifted 15mm between free breathing CBCT and gated CBCT. Conclusion: Gated CBCT imaging provides better representation of the moving lung tumor with less motion artifacts, and has the potential to improve the positioning accuracy in lung SBRT treatment.

  8. Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

    SciTech Connect (OSTI)

    El-Atab, Nazek; Nayfeh, Ammar; Ozcan, Ayse; Alkis, Sabri; Okyay, Ali K.; Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara

    2014-01-06

    A low power zinc-oxide (ZnO) charge trapping memory with embedded silicon (Si) nanoparticles is demonstrated. The charge trapping layer is formed by spin coating 2?nm silicon nanoparticles between Atomic Layer Deposited ZnO steps. The threshold voltage shift (?V{sub t}) vs. programming voltage is studied with and without the silicon nanoparticles. Applying ?1?V for 5?s at the gate of the memory with nanoparticles results in a ?V{sub t} of 3.4?V, and the memory window can be up to 8?V with an excellent retention characteristic (>10 yr). Without nanoparticles, at ?1?V programming voltage, the ?V{sub t} is negligible. In order to get ?V{sub t} of 3.4?V without nanoparticles, programming voltage in excess of 10?V is required. The negative voltage on the gate programs the memory indicating that holes are being trapped in the charge trapping layer. In addition, at 1?V the electric field across the 3.6?nm tunnel oxide is calculated to be 0.36 MV/cm, which is too small for significant tunneling. Moreover, the ?V{sub t} vs. electric field across the tunnel oxide shows square root dependence at low fields (E??2.7 MV/cm). This indicates that Poole-Frenkel Effect is the main mechanism for holes emission at low fields and Phonon Assisted Tunneling at higher fields.

  9. Effect of pre-oxidation and environmental aging on the seal strength of a novel high-temperature solid oxide fuel cell (SOFC) sealing glass with metallic interconnect

    SciTech Connect (OSTI)

    Chou, Y. S.; Stevenson, Jeffry W.; Singh, Prabhakar

    2008-09-15

    A novel high-temperature alkaline-earth silicate sealing glass was developed for solid oxide fuel cell (SOFC) applications. The glass was used to join two ferritic stainless steel coupons for strength evaluation. The steel coupons were pre-oxidized at elevated temperatures to promote thick oxide layers to simulate long-term exposure conditions. In addition, seals to as-received metal coupons were also tested after aging in oxidizing or reducing environments to simulate the actual SOFC environment. Room temperature tensile testing showed strength degradation when using pre-oxidized coupons, and more extensive degradation after aging in air. Fracture surface and microstructural analysis confirmed that the cause of degradation was formation of SrCrO4 at the outer sealing edges exposed to air.

  10. Plutonium Oxidation and Subsequent Reduction by Mn (IV) Minerals

    SciTech Connect (OSTI)

    KAPLAN, DANIEL

    2005-09-13

    Plutonium sorbed to rock tuff was preferentially associated with manganese oxides. On tuff and synthetic pyrolusite (Mn{sup IV}O{sub 2}), Pu(IV) or Pu(V) was initially oxidized, but over time Pu(IV) became the predominant oxidation state of sorbed Pu. Reduction of Pu(V/VI), even on non-oxidizing surfaces, is proposed to result from a lower Gibbs free energy of the hydrolyzed Pu(IV) surface species versus that of the Pu(V) or Pu(VI) surface species. This work suggests that despite initial oxidation of sorbed Pu by oxidizing surfaces to more soluble forms, the less mobile form of Pu, Pu(IV), will dominate Pu solid phase speciation during long term geologic storage. The safe design of a radioactive waste or spent nuclear fuel geologic repository requires a risk assessment of radionuclides that may potentially be released into the surrounding environment. Geochemical knowledge of the radionuclide and the surrounding environment is required for predicting subsurface fate and transport. Although difficult even in simple systems, this task grows increasingly complicated for constituents, like Pu, that exhibit complex environmental chemistries. The environmental behavior of Pu can be influenced by complexation, precipitation, adsorption, colloid formation, and oxidation/reduction (redox) reactions (1-3). To predict the environmental mobility of Pu, the most important of these factors is Pu oxidation state. This is because Pu(IV) is generally 2 to 3 orders of magnitude less mobile than Pu(V) in most environments (4). Further complicating matters, Pu commonly exists simultaneously in several oxidation states (5, 6). Choppin (7) reported Pu may exist as Pu(IV), Pu(V), or Pu(VI) oxic natural groundwaters. It is generally accepted that plutonium associated with suspended particulate matter is predominantly Pu(IV) (8-10), whereas Pu in the aqueous phase is predominantly Pu(V) (2, 11-13). The influence of the character of Mn-containing minerals expected to be found in subsurface repository environments on Pu oxidation state distributions has been the subject of much recent research. Kenney-Kennicutt and Morse (14), Duff et al. (15), and Morgenstern and Choppin (16) observed oxidation of Pu facilitated by Mn(IV)-bearing minerals. Conversely, Shaughnessy et al. (17) used X-ray Absorption near-edge spectroscopy (XANES) to show reduction of Pu(VI) by hausmannite (Mn{sup II}Mn{sub 2}{sup III}O{sub 4}) and manganite ({gamma}-Mn{sup III}OOH) and Kersting et al., (18) observed reduction of Pu(VI) by pyrolusite (Mn{sup IV}O{sub 2}). In this paper, we attempt to reconcile the apparently conflicting datasets by showing that Mn-bearing minerals can indeed oxidize Pu, however, if the oxidized species remains on the solid phase, the oxidation step competes with the formation of Pu(IV) that becomes the predominant solid phase Pu species with time. The experimental approach we took was to conduct longer term (approximately two years later) oxidation state analyses on the Pu sorbed to Yucca Mountain tuff (initial analysis reported by Duff et al., (15)) and measure the time-dependant changes in the oxidation state distribution of Pu in the presence of the Mn mineral pyrolusite.

  11. NEWS & VIEWS PATTERN FORMATION

    E-Print Network [OSTI]

    Loss, Daniel

    no apologies for investing energy into problems of specific application to a particular process in nature, and having the curiosity to want to find out how they work. The general public, and especially children flow/surface growth system in a rarely explored region of parameter space for such pattern formation

  12. Isolating Triggered Star Formation

    E-Print Network [OSTI]

    Elizabeth J. Barton; Jacob A. Arnold; Andrew R. Zentner; James S. Bullock; Risa H. Wechsler

    2007-08-21

    Galaxy pairs provide a potentially powerful means of studying triggered star formation from galaxy interactions. We use a large cosmological N-body simulation coupled with a well-tested semi-analytic substructure model to demonstrate that the majority of galaxies in close pairs reside within cluster or group-size halos and therefore represent a biased population, poorly suited for direct comparison to ``field'' galaxies. Thus, the frequent observation that some types of galaxies in pairs have redder colors than ``field'' galaxies is primarily a selection effect. We select galaxy pairs that are isolated in their dark matter halos with respect to other massive subhalos (N=2 halos) and a control sample of isolated galaxies (N=1 halos) for comparison. We then apply these selection criteria to a volume-limited subset of the 2dF Galaxy Redshift Survey with M_Bj ~ 5 above their average past value, while only 10% of isolated galaxies in the control sample show this level of enhancement. Thus, 14% (20 %) of the galaxies in these close pairs show clear triggered star formation. The isolation criteria we develop provide a means to constrain star formation and feedback prescriptions in hydrodynamic simulations and a very general method of understanding the importance of triggered star formation in a cosmological context. (Abridged.)

  13. Controlled CO preferential oxidation

    DOE Patents [OSTI]

    Meltser, Mark A. (Pittsford, NY); Hoch, Martin M. (Webster, NY)

    1997-01-01

    Method for controlling the supply of air to a PROX reactor for the preferential oxidation in the presence of hydrogen wherein the concentration of the hydrogen entering and exiting the PROX reactor is monitored, the difference therebetween correlated to the amount of air needed to minimize such difference, and based thereon the air supply to the PROX reactor adjusted to provide such amount and minimize such difference.

  14. Millisecond Oxidation of Alkanes

    Broader source: Energy.gov [DOE]

    This factsheet describes a project whose goal is to commercialize a production process for propylene and acrylic acid from propane using a catalytic auto-thermal oxydehydrogenation process operating at short contact times. Auto-thermal oxidation for conversion of propane to propylene and acrylic acid promises energy savings of 20 trillion Btu per year by 2020. In addition to reducing energy consumption, this technology can reduce manufacturing costs by up to 25 percent, and reduce a variety of greenhouse gas emissions.

  15. Nonisostructural complex oxide heteroepitaxy

    SciTech Connect (OSTI)

    Wong, Franklin J. Ramanathan, Shriram

    2014-07-01

    The authors present an overview of the fundamentals and representative examples of the growth of epitaxial complex oxide thin films on structurally dissimilar substrates. The authors will delineate how the details of particular crystal structures and symmetry of different oxide surfaces can be employed for a rational approach to the synthesis of nonisostructural epitaxial heterostructures. The concept of oxygen eutaxy can be widely applied. Materials combinations will be split into three categories, and in all cases the films and substrates occur in different crystal structures: (1) common translational and rotational symmetry between the film and substrate planes; (2) translational symmetry mismatch between the substrates and films that is distinct from a simple mismatch in lattice parameters; and (3) rotational symmetry mismatch. In case (1), in principle single-crystalline thin films can be attained despite the films and substrates possessing different crystal structures. In case (2), antiphase boundaries will be prevalent in the thin films. In case (3), thin-film rotational variants that are joined by tilt boundaries will be present. Diffraction techniques to determine crystallographic alignment and epitaxial variants are discussed, and transmission electron microscopy studies to investigate extended defects in the thin films will also be reviewed. The authors end with open problems in this field regarding the structure of oxide interfaces that can be topics for future research.

  16. Recovery and regeneration of spent MHD seed material by the formate process

    DOE Patents [OSTI]

    Sheth, Atul C. (Tullahoma, TN); Holt, Jeffrey K. (Manchester, TN); Rasnake, Darryll G. (Manchester, TN); Solomon, Robert L. (Seattle, WA); Wilson, Gregory L. (Redmond, WA); Herrigel, Howard R. (Seattle, WA)

    1991-01-01

    The specification discloses a spent seed recovery and regeneration process for an MHM power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to supress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate.

  17. Recovery and regeneration of spent MHD seed material by the formate process

    DOE Patents [OSTI]

    Sheth, A.C.; Holt, J.K.; Rasnake, D.G.; Solomon, R.L.; Wilson, G.L.; Herrigel, H.R.

    1991-10-15

    The specification discloses a spent seed recovery and regeneration process for an MHD power plant employing an alkali metal salt seed material such as potassium salt wherein the spent potassium seed in the form of potassium sulfate is collected from the flue gas and reacted with calcium hydroxide and carbon monoxide in an aqueous solution to cause the formation of calcium sulfate and potassium formate. The pH of the solution is adjusted to suppress formation of formic acid and to promote precipitation of any dissolved calcium salts. The solution containing potassium formate is then employed to provide the potassium salt in the form of potassium formate or, optionally, by heating the potassium formate under oxidizing conditions to convert the potassium formate to potassium carbonate. 5 figures.

  18. Size-reduction of nanodiamonds via air oxidation

    E-Print Network [OSTI]

    Gaebel, T; Chen, J; Hemmer, P; Rabeau, J R

    2011-01-01

    Here we report the size reduction and effects on nitrogen-vacancy centres in nanodiamonds by air oxidation using a combined atomic force and confocal microscope. The average height reduction of individual crystals as measured by atomic force microscopy was 10.6 nm/h at 600 {\\deg}C air oxidation at atmospheric pressure. The oxidation process modified the surface including removal of non-diamond carbon and organic material which also led to a decrease in background fluorescence. During the course of the nanodiamond size reduction, we observed the annihilation of nitrogen-vacancy centres which provided important insight into the formation of colour centres in small crystals. In these unirradiated samples, the smallest nanodiamond still hosting a stable nitrogen-vacancy centre observed was 8 nm.

  19. Size-reduction of nanodiamonds via air oxidation

    E-Print Network [OSTI]

    T. Gaebel; C. Bradac; J. Chen; P. Hemmer; J. R. Rabeau

    2011-04-27

    Here we report the size reduction and effects on nitrogen-vacancy centres in nanodiamonds by air oxidation using a combined atomic force and confocal microscope. The average height reduction of individual crystals as measured by atomic force microscopy was 10.6 nm/h at 600 {\\deg}C air oxidation at atmospheric pressure. The oxidation process modified the surface including removal of non-diamond carbon and organic material which also led to a decrease in background fluorescence. During the course of the nanodiamond size reduction, we observed the annihilation of nitrogen-vacancy centres which provided important insight into the formation of colour centres in small crystals. In these unirradiated samples, the smallest nanodiamond still hosting a stable nitrogen-vacancy centre observed was 8 nm.

  20. Regulation of N-type Voltage-Gated Calcium Channels and Presynaptic Function by Cyclin-Dependent Kinase 5

    E-Print Network [OSTI]

    Su, Susan C.

    N-type voltage-gated calcium channels localize to presynaptic nerve terminals and mediate key events including synaptogenesis and neurotransmission. While several kinases have been implicated in the modulation of calcium ...

  1. The origin and reduction of switching noise in GaAs/AlGaAs lateral gated devices

    E-Print Network [OSTI]

    Davies, John H.

    to cryogenic temperature with all gates grounded to the substrate to protect against electrostatic effects in AlGaAs: electrons `freeze' into deep traps ­ DX centres ­ below about 150 K. The occupation of donors

  2. APPLIED PHYSICS REVIEWS Ultrathin ,,4 nm... SiO2 and SiON gate dielectric layers for silicon

    E-Print Network [OSTI]

    Garfunkel, Eric

    . . . . . . . . . . . . . . . . . . . . . . . . . . 2078 4. Neutral electron trap generation. . . . . . . . . . 2079 5. Stress-induced leakage current. . . . . . . . . . . . . . . . . . . . . . 2065 C. Ion beam analysis. . . . . . . . . . . . . . . . . . . . . . . . . 2067 D. Electron microscopy. . . . . . . . . . . . . . . . . . . 2075 1. C­V measurements. . . . . . . . . . . . . . . . . . . . 2075 2. Gate tunnel current

  3. Vehicle Technologies Office Merit Review 2014: GATE Center for Electric Drive Transportation at the University of Michigan- Dearborn

    Broader source: Energy.gov [DOE]

    Presentation given by Regents University of Michigan at 2014 DOE Hydrogen and Fuel Cells Program and Vehicle Technologies Office Annual Merit Review and Peer Evaluation Meeting about GATE Center...

  4. A review of the use and potential of the GATE Monte Carlo simulation code for radiation therapy and dosimetry applications

    SciTech Connect (OSTI)

    Sarrut, David; Université Lyon 1; Centre Léon Bérard ; Bardiès, Manuel; Marcatili, Sara; Mauxion, Thibault; Boussion, Nicolas; Freud, Nicolas; Létang, Jean-Michel; Jan, Sébastien; Maigne, Lydia; Perrot, Yann; Pietrzyk, Uwe; Robert, Charlotte; and others

    2014-06-15

    In this paper, the authors' review the applicability of the open-source GATE Monte Carlo simulation platform based on the GEANT4 toolkit for radiation therapy and dosimetry applications. The many applications of GATE for state-of-the-art radiotherapy simulations are described including external beam radiotherapy, brachytherapy, intraoperative radiotherapy, hadrontherapy, molecular radiotherapy, and in vivo dose monitoring. Investigations that have been performed using GEANT4 only are also mentioned to illustrate the potential of GATE. The very practical feature of GATE making it easy to model both a treatment and an imaging acquisition within the same frameworkis emphasized. The computational times associated with several applications are provided to illustrate the practical feasibility of the simulations using current computing facilities.

  5. Cerebellar Purkinje cell death in the P/Q -type voltage-gated calcium ion channel mutant mouse, leaner 

    E-Print Network [OSTI]

    Frank-Cannon, Tamy Catherine

    2006-04-12

    . The leaner mutation causes reduced calcium ion influx upon activation of P/Q-type voltage-gated calcium channels. This disrupts calcium homeostasis and leads to a loss of cerebellar neurons, including cerebellar Purkinje cells. Because of its similarities...

  6. Mechanically induced two-qubit gates and maximally entangled states for single electron spins in a carbon nanotube

    E-Print Network [OSTI]

    Heng Wang; Guido Burkard

    2015-08-10

    We theoretically analyze a system where two electrons are trapped separately in two quantum dots on a suspended carbon nanotube (CNT), subject to external ac electric driving. An indirect mechanically-induced coupling of two distant single electron spins is induced by the interaction between the spins and the mechanical motion of the CNT. We show that a two-qubit iSWAP gate and arbitrary single-qubit gates can be obtained from the intrinsic spin-orbit coupling. Combining the iSWAP gate and single-qubit gates, maximally entangled states of two spins can be generated in a single step by varying the frequency and the strength of the external electric driving field. The spin-phonon coupling can be turned off by electrostatically shifting the electron wave function on the nanotube.

  7. Neurodegeneration in cerebellar granule cells of p/q type voltage gated calcium channel mutant leaner mice 

    E-Print Network [OSTI]

    Bawa, Bhupinder

    2009-05-15

    Mutations of the ?1A subunit of CaV 2.1 voltage gated calcium (VGCC) channels are responsible for several inherited disorders affecting humans, including familial hemiplegic migraine, episodic ataxia type and spinocerebellar ataxia type. The leaner...

  8. The Dependence of the Oxidation Enhancement of InP(100) Surface on the Coverage of the Adsorbed Cs

    SciTech Connect (OSTI)

    Sun, Yun

    2010-06-07

    We report the oxidation of the InP(100) surface promoted by adsorbed Cs by synchrotron radiation photoemission. Oxygen exposure causes reduction of the charge transferred to the InP substrate from Cs and the growth of indium oxide and phosphorous oxide. The oxide growth displays a clear dependence on the Cs coverage. The oxidation of phosphorous is negligible up to 1000 L of O{sub 2} exposure when the Cs coverage is less than half a monolayer (ML), but the formation of the second half monolayer of Cs greatly accelerates the oxidation. This different enhancement of the InP oxidation by the first and the second half monolayer of Cs is due to the double layer structure of the adsorbed Cs atoms, and consequently the higher 6s electron density in the Cs atoms when Cs coverage is larger than 0.5 ML.

  9. Hysteresis-free high rate reactive sputtering of niobium oxide, tantalum oxide, and aluminum oxide

    SciTech Connect (OSTI)

    Särhammar, Erik, E-mail: erik.sarhammar@angstrom.uu.se; Berg, Sören; Nyberg, Tomas [Department of Solid State Electronics, The Ångström Laboratory, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden)

    2014-07-01

    This work reports on experimental studies of reactive sputtering from targets consisting of a metal and its oxide. The composition of the targets varied from pure metal to pure oxide of Al, Ta, and Nb. This combines features from both the metal target and oxide target in reactive sputtering. If a certain relation between the metal and oxide parts is chosen, it may be possible to obtain a high deposition rate, due to the metal part, and a hysteresis-free process, due to the oxide part. The aim of this work is to quantify the achievable boost in oxide deposition rate from a hysteresis-free process by using a target consisting of segments of a metal and its oxide. Such an increase has been previously demonstrated for Ti using a homogeneous substoichiometric target. The achievable gain in deposition rate depends on transformation mechanisms from oxide to suboxides due to preferential sputtering of oxygen. Such mechanisms are different for different materials and the achievable gain is therefore material dependent. For the investigated materials, the authors have demonstrated oxide deposition rates that are 1.5–10 times higher than what is possible from metal targets in compound mode. However, although the principle is demonstrated for oxides of Al, Ta, and Nb, a similar behavior is expected for most oxides.

  10. Variation of the shape and morphological properties of silica and metal oxide powders by electro homogeneous precipitation

    DOE Patents [OSTI]

    Harris, Michael T. (Knoxville, TN); Basaran, Osman A. (Oak Ridge, TN); Sisson, Warren G. (Oak Ridge, TN); Brunson, Ronald R. (Lenoir City, TN)

    1997-01-01

    The present invention provides a method for preparing irreversible linear aggregates (fibrils) of metal oxide powders by utilizing static or pulsed DC electrical fields across a relatively non-conducting liquid solvent in which organometal compounds or silicon alkoxides have been dissolved. The electric field is applied to the relatively non-conducting solution throughout the particle formation and growth process promoting the formation of either linear aggregates (fibrils) or spherical shaped particles as desired. Thus the present invention provides a physical method for altering the size, shape and porosity of precursor hydrous metal oxide or hydrous silicon oxide powders for the development of advanced ceramics with improved strength and insulating capacity.

  11. 2012 ARPA-E Energy Innovation Summit: Fireside Chat with Steven Chu and Bill Gates

    ScienceCinema (OSTI)

    Chu, Steven (U.S. Department of Energy Secretary); Gates, Bill (Microsoft, Chairman); Podesta, John (Center for American Progress, Chair and Counselor)

    2012-03-21

    The third annual ARPA-E Energy Innovation Summit was held in Washington D.C. in February, 2012. The event brought together key players from across the energy ecosystem - researchers, entrepreneurs, investors, corporate executives, and government officials - to share ideas for developing and deploying the next generation of energy technologies. This video captures a session called 'Fireside Chat' that featured Steven Chu, the Secretary of Energy, and Bill Gates, Chairman of Microsoft Corporation. The session is moderated by John Podesta, Chair of the Center for American Progress. Energy Secretary Steven Chu and Microsoft Founder and Chairman Bill Gates exchanged ideas about how small businesses and innovators can overcome the challenges that face many startups.

  12. A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots

    E-Print Network [OSTI]

    D. M. Zajac; T. M. Hazard; X. Mi; K. Wang; J. R. Petta

    2015-02-05

    We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel coupling at the (1,0) to (0,1) interdot charge transition.

  13. A communication-efficient nonlocal measurement with application to communication complexity and bipartite gate capacities

    E-Print Network [OSTI]

    Aram W. Harrow; Debbie W. Leung

    2011-03-04

    Two dual questions in quantum information theory are to determine the communication cost of simulating a bipartite unitary gate, and to determine their communication capacities. We present a bipartite unitary gate with two surprising properties: 1) simulating it with the assistance of unlimited EPR pairs requires far more communication than with a better choice of entangled state, and 2) its communication capacity is far lower than its capacity to create entanglement. This suggests that 1) unlimited EPR pairs are not the most general model of entanglement assistance for two-party communication tasks, and 2) the entangling and communicating abilities of a unitary interaction can vary nearly independently. The technical contribution behind these results is a communication-efficient protocol for measuring whether an unknown shared state lies in a specified rank-one subspace or its orthogonal complement.

  14. Attosecond x-ray source generation from two-color polarized gating plasmonic field enhancement

    SciTech Connect (OSTI)

    Feng, Liqiang [College of Science, Liaoning University of Technology, Jinzhou 121000 (China) [College of Science, Liaoning University of Technology, Jinzhou 121000 (China); State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Yuan, Minghu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China)] [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Chu, Tianshu [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China) [State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023 (China); Institute for Computational Sciences and Engineering, Laboratory of New Fiber Materials and Modern Textile, The Growing Base for State Key Laboratory, Qingdao University, Qingdao 266071 (China)

    2013-12-15

    The plasmonic field enhancement from the vicinity of metallic nanostructures as well as the polarization gating technique has been utilized to the generation of the high order harmonic and the single attosecond x-ray source. Through numerical solution of the time-dependent Schrödinger equation, for moderate the inhomogeneity and the polarized angle of the two fields, we find that not only the harmonic plateau has been extended and enhanced but also the single short quantum path has been selected to contribute to the harmonic. As a result, a series of 50 as pulses around the extreme ultraviolet and the x-ray regions have been obtained. Furthermore, by investigating the other parameters effects on the harmonic emission, we find that this two-color polarized gating plasmonic field enhancement scheme can also be achieved by the multi-cycle pulses, which is much better for experimental realization.

  15. Air-gap gating of MgZnO/ZnO heterostructures

    SciTech Connect (OSTI)

    Tambo, T.; Falson, J. Kozuka, Y.; Maryenko, D.; Tsukazaki, A.; Kawasaki, M.

    2014-08-28

    The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5??m. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3?mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.

  16. Double-metal-gate nanocrystalline Si thin film transistors with flexible threshold voltage controllability

    SciTech Connect (OSTI)

    Chiou, Uio-Pu; Pan, Fu-Ming, E-mail: fmpan@faculty.nctu.edu.tw [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China)] [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); Shieh, Jia-Min, E-mail: jmshieh@narlabs.org.tw, E-mail: jmshieh@faculty.nctu.edu.tw [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China) [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China); Yang, Chih-Chao [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China)] [National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Huang, Wen-Hsien [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China) [Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 30050, Taiwan (China); National Nano Device Laboratories, No. 26, Prosperity Road 1, Hsinchu 30078, Taiwan (China); Kao, Yo-Tsung [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)] [Departments of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 30010, Taiwan (China)

    2013-11-11

    We fabricated nano-crystalline Si (nc-Si:H) thin-film transistors (TFTs) with a double-metal-gate structure, which showed a high electron-mobility (?{sub FE}) and adjustable threshold voltages (V{sub th}). The nc-Si:H channel and source/drain (S/D) of the multilayered TFT were deposited at 375?°C by inductively coupled plasma chemical vapor deposition. The low grain-boundary defect density of the channel layer is responsible for the high ?{sub FE} of 370 cm{sup 2}/V-s, a steep subthreshold slope of 90?mV/decade, and a low V{sub th} of ?0.64?V. When biased with the double-gate driving mode, the device shows a tunable V{sub th} value extending from ?1?V up to 2.7?V.

  17. Microstructure of amorphous indium oxide and tin oxide thin films

    SciTech Connect (OSTI)

    Rauf, I.A.; Brown, L.M. (Univ. of Cambridge (United Kingdom))

    1994-03-15

    Indium oxide, tin oxide, and some other doped and undoped oxide semiconductors show an interesting and technologically important combination of properties. They have high luminous transparency, good electrical conductivity and high infrared reflectivity. Numerous techniques for depositing these materials have been developed and have undergone a number of changes during last two decades. An understanding of the basic physics of these materials has begun to dawn. Most of the literature on transparent conducting oxides consists of studying the dependence of the properties on the composition, preparation conditions, such as deposition rate, substrate temperature or post-deposition heat treatment. In this paper the authors have employed the transmission electron microscopy to study the microstructure of reactively evaporated, electron beam evaporated, ion-beam sputtered amorphous indium oxide and reactively evaporated amorphous tin oxide thin films. These films, which have received little attention in the past, can have enormous potential as transparent conductive coatings on heat-sensitive substrates and inexpensive solar cells.

  18. Gated frequency-resolved optical imaging with an optical parametric amplifier for medical applications

    SciTech Connect (OSTI)

    Cameron, S.M.; Bliss, D.E.

    1997-02-01

    Implementation of optical imagery in a diffuse inhomogeneous medium such as biological tissue requires an understanding of photon migration and multiple scattering processes which act to randomize pathlength and degrade image quality. The nature of transmitted light from soft tissue ranges from the quasi-coherent properties of the minimally scattered component to the random incoherent light of the diffuse component. Recent experimental approaches have emphasized dynamic path-sensitive imaging measurements with either ultrashort laser pulses (ballistic photons) or amplitude modulated laser light launched into tissue (photon density waves) to increase image resolution and transmissive penetration depth. Ballistic imaging seeks to compensate for these {open_quotes}fog-like{close_quotes} effects by temporally isolating the weak early-arriving image-bearing component from the diffusely scattered background using a subpicosecond optical gate superimposed on the transmitted photon time-of-flight distribution. The authors have developed a broadly wavelength tunable (470 nm -2.4 {mu}m), ultrashort amplifying optical gate for transillumination spectral imaging based on optical parametric amplification in a nonlinear crystal. The time-gated image amplification process exhibits low noise and high sensitivity, with gains greater than 104 achievable for low light levels. We report preliminary benchmark experiments in which this system was used to reconstruct, spectrally upcovert, and enhance near-infrared two-dimensional images with feature sizes of 65 {mu}m/mm{sup 2} in background optical attenuations exceeding 10{sup 12}. Phase images of test objects exhibiting both absorptive contrast and diffuse scatter were acquired using a self-referencing Shack-Hartmann wavefront sensor in combination with short-pulse quasi-ballistic gating. The sensor employed a lenslet array based on binary optics technology and was sensitive to optical path distortions approaching {lambda}/100.

  19. Fast geometric gate operation of superconducting charge qubits in circuit QED

    E-Print Network [OSTI]

    Zheng-Yuan Xue

    2011-07-09

    A scheme for coupling superconducting charge qubits via a one-dimensional superconducting transmission line resonator is proposed. The qubits are working at their optimal points, where they are immune to the charge noise and possess long decoherence time. Analysis on the dynamical time evolution of the interaction is presented, which is shown to be insensitive to the initial state of the resonator field. This scheme enables fast gate operation and is readily scalable to multiqubit scenario.

  20. Fast cooling of trapped ions using the dynamical Stark shift gate

    E-Print Network [OSTI]

    A. Retzker; M. B. Plenio

    2006-07-27

    A laser cooling scheme for trapped ions is presented which is based on the fast dynamical Stark shift gate, described in [Jonathan etal, PRA 62, 042307]. Since this cooling method does not contain an off resonant carrier transition, low final temperatures are achieved even in traveling wave light field. The proposed method may operate in either pulsed or continuous mode and is also suitable for ion traps using microwave addressing in strong magnetic field gradients.